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Sample records for ge senograph 2000d

  1. Physical characteristics of GE Senographe Essential and DS digital mammography detectors

    International Nuclear Information System (INIS)

    Ghetti, Caterina; Borrini, Adriano; Ortenzia, Ornella; Rossi, Raffaella; Ordonez, Pedro L.

    2008-01-01

    The purpose of this study was to investigate physical characteristics of two full field digital mammography (FFDM) systems (GE Senographe Essential and DS). Both are indirect conversion (x ray to light) a-Si flat panels coupled with a CsI(Tl) scintillator. The examined systems have the same pixel size (100 μm) but a different field of view: a conventional size 23x19.2 cm 2 and a large field 24x30.7 cm 2 , specifically designed to image large breasts. In the GE Senographe Essential model relevant improvements in flat panel design were implemented and new deposition tools for metal, a-Si, and CsI(Tl) were introduced by GE. These changes in detector design are expected to be beneficial for advanced applications such as breast tomosynthesis. The presampling modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were measured for a wide range of exposure (25-240 μGy) with a RQA-M2 technique (28 kVp with a Mo/Mo target/filter combination and 2 mm of additional aluminum filtration). At 1, 2, and at 4 lp/mm MTF is equal to 0.9, 0.76, and 0.46 for the conventional field detector and to 0.85, 0.59, and 0.24 for the large field detector. The latter detector exhibits an improved NNPS due to a lower electronic noise and a better DQE that reaches 60%. In addition a contrast-detail analysis was performed with CDMAM 3.4 phantom and CDCOM software: GE Senographe DS showed statistically significant poorer detection ability in comparison with the GE Senographe Essential. These results could have been expected, at least qualitatively, considering the relative DQE of the two systems

  2. Study of optimization in CR and DR digital mammography systems; Estudo da otimização em sistemas de mamografia digital CR e DR

    Energy Technology Data Exchange (ETDEWEB)

    Perez, Alessandra M.M.M.; Poletti, Martin E. [Universidade de Sao Paulo (USP), Ribeirão Preto, SP (Brazil). Departamento de Física; Tomal, Alessandra [Universidade de Campinas (UNICAMP), Campinas, SP (Brazil). Instituto de Física Gleb Wataghin; Correia, Paula D. [MP Radioproteção, Uberlândia, MG (Brazil); Paciência, Renato D. [BrasilRad, Florianópolis, SC (Brazil); Silva, Marcia C. [Hospital Israelita Albert Einstein, São Paulo, SP (Brazil)

    2017-07-01

    The advance of digital mammography in Brazil require revisiting optimization conditions. This work aimed to determine optimized radiographic technique for two detection systems (Computerized Radiography and Digital Radiography) in use in three mammography units: Mammomat 3000 Nova (Siemens), Senographe DMR (GE) and Senographe 2000D (GE). Optimization was conducted for different technique factors and breast phantom configurations, such as tube voltage settings (26 to 32 kV), target and filter combinations (Mo/Mo, Mo/Rh and Rh/Rh) and breast equivalent material in various thicknesses (2 to 8 cm), using a figure of merit (FOM) as a parameter. The target and filter combinations that provided the highest FOM values were Mo/Rh for Siemens equipment and Rh/Rh for both GE equipment, corresponding to the higher energy spectra in each unity. It was also observed an increasing tendency of tube voltage which maximizes FOM with the increase of thickness. (author)

  3. Detection and Evaluation of Early Breast Cancer via Magnetic Resonance Imaging: Studies of Mouse Models and Clinical Implementation

    Science.gov (United States)

    2009-03-01

    Medellin D, Mohsin SK, Hilsenbeck SG, Lamph WW, Gottardis MM, Shirley MA, Kuhn JG et al: 9-cis-Retinoic acid suppresses mammary tumorigenesis in C3...asymptomatic women who were imaged with a 3D bilateral dynamic MR sequence. Breast density was classified independently by one reader on digital x...plane. Digital mammograms acquired on GE Senograph 2000D. Image Analysis: Breast density was classified on mammograms by one reader according to BI

  4. Investigation into the optimal use of automatic optimisation of parameters (AOP) for mammography

    International Nuclear Information System (INIS)

    Herley, J.; Tan, W.

    2004-01-01

    Full text: Automatic Optimisation of Parameters (AOP) is an AEC function offered on GE Medical Systems mammography units. It optimizes x-ray exposure to give optimal image quality by automatically selecting Wp, target/filter and mAs according to the thickness and density of the breast. The Medical Physics group of Biomedical Technology Services (BTS) has conducted an investigation into the optimal use of the AOP modes for the GE Senographe 800T and GE Senographe DMR mammography units located in several BreastScreen Queensland (BSQ) clinics. Variation of image quality and dose using the three AOP modes were studied. The planned outcome is to develop a recommendation for the optimal use of AOP modes based on various breast thickness and composition. Both GE Senographe 800T and GE Senographe DMR have 3 AOP mode selections: CNT (contrast), STD (standard) and Dose. Various thickness of perspex ranging from 2cm to 8cm was compressed for each mode to determine the selection of kVp, target/filter and mAs for each apparatus. Image quality was evaluated using a Tor[Mam] phantom for various thicknesses in each AOP mode. The scoring system implemented for image quality was that recommended by Leeds X-ray Imaging (Lxi) where a numerical scale from O to 3 is used to denote the level of visibility of details perceived in the phantom image. Results confirmed that mean glandular dose (MGD) increases with breast thickness. Increasing image contrast will increase dose to breast due to lower energy radiation spectrum used. The GE Senographe DMR has the advantage of utilising a Rhodium target thus giving a lower MGD than the GE Senographe 800T at thickness above 4cm. Film image quality decreases with increasing thickness of perspex. A breast thickness of 2cm yields similar image quality in all 3 AOP modes as the selected kVp value and target filter (Mo/Mo) was similar. There was no significant difference in image quality for the GE Senographe DMR apparatus between 2cm and 4cm for all

  5. Measurement of the atmospheric muon spectrum from 20 to 2000 GeV

    CERN Document Server

    Unger, Michael

    2003-01-01

    The atmospheric muon spectrum between 20 and 2000 GeV was measured with the L3 magnetic muon spectrometer for zenith angles ranging from 0 to 58 degrees. Due to the large data set and the good detector resolution, a precision of 2.6% at 100 GeV was achieved for the absolute normalization of the vertical muon flux. The momentum dependence of the ratio of positive to negative muons was obtained between 20 and 630 GeV.

  6. Thermal transport property of Ge34 and d-Ge investigated by molecular dynamics and the Slack's equation

    International Nuclear Information System (INIS)

    Han-Fu, Wang; Wei-Guo, Chu; Yan-Jun, Guo; Hao, Jin

    2010-01-01

    In this study, we evaluate the values of lattice thermal conductivity κ L of type II Ge clathrate (Ge 34 ) and diamond phase Ge crystal (d-Ge) with the equilibrium molecular dynamics (EMD) method and the Slack's equation. The key parameters of the Slack's equation are derived from the thermodynamic properties obtained from the lattice dynamics (LD) calculations. The empirical Tersoff's potential is used in both EMD and LD simulations. The thermal conductivities of d-Ge calculated by both methods are in accordance with the experimental values. The predictions of the Slack's equation are consistent with the EMD results above 250 K for both Ge 34 and d-Ge. In a temperature range of 200–1000 K, the κ L value of d-Ge is about several times larger than that of Ge 34 . (condensed matter: structure, thermal and mechanical properties)

  7. Measurement of D0, D+, D+s and D*+ production in fixed target 920 GeV proton-nucleus collisions

    International Nuclear Information System (INIS)

    Abt, I.

    2007-08-01

    The inclusive production cross sections of the charmed mesons D 0 , D + , D + s and D *+ have been measured in interactions of 920 GeV protons on C, Ti, and W targets with the HERA-B detector at the HERA storage ring. Differential cross sections as a function of transverse momentum and Feynman's x variable are given for the central rapidity region and for transverse momenta up to p T =3.5 GeV/c. The atomic mass number dependence and the leading to non-leading particle production asymmetries are presented as well. (orig.)

  8. 70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

    International Nuclear Information System (INIS)

    Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

    1978-01-01

    The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape

  9. Measurement of D0, D+, Ds+ and D*+ production in fixed target 920 GeV proton-nucleus collisions

    International Nuclear Information System (INIS)

    Abt, I.; Kisel, I.; Adams, M.; Cruse, C.; Ehret, K.; Funcke, M.; Schwenninger, B.; Wegener, D.; Agari, M.; Bauer, C.; Braeuer, M.; Hofmann, W.; Jagla, T.; Knoepfle, K.T.; Pleier, M.A.; Reeves, K.; Sanchez, F.; Schmelling, M.; Schwingenheuer, B.; Sciacca, F.; Albrecht, H.; Aplin, S.J.; Egorytchev, V.; Emeliyanov, D.; Flammer, J.; Hohlmann, M.; Kapitza, H.; Lewendel, B.; Masciocchi, S.; Medinnis, M.; Mevius, M.; Michetti, A.; Noerenberg, M.; Nunez Pardo de Vera, M.T.; Padilla, C.; Ressing, D.; Riu, I.; Rybnikov, V.; Schmidt, B.; Schwarz, A.S.; Soezueer, L.; Somov, A.; Spengler, J.; Wurth, R.; Aleksandrov, A.; Bohm, G.; Gellrich, A.; Hernandez, J.M.; Mankel, R.; Nowak, S.; Schreiner, A.; Schwanke, U.; Walter, M.; Amaral, V.; Amorim, A.; Bastos, J.; Batista, J.; Carvalho, J.; Silva, L.; Wolters, H.; Aushev, V.; Prystupa, S.; Pugatch, V.; Vassiliev, Y.; Bagaturia, Y.; Balagura, V.; Bobchenko, B.; Bogatyrev, A.; Danilov, M.; Essenov, S.; Fominykh, B.; Golutvin, A.; Gouchtchine, O.; Igonkina, O.; Khasanov, F.; Kvaratskheliia, T.; Matchikhilian, I.; Mizuk, R.; Popov, V.; Rostovtseva, I.; Tikhomirov, I.; Titov, M.; Zaitsev, Y.; Zhelezov, A.; Bargiotti, M.; Bertin, A.; Bruschi, M.; De Castro, S.; Fabbri, L.; Faccioli, P.; Giacobbe, B.; Grimaldi, F.; Massa, I.; Piccinini, M.; Semprini-Cesari, N.; Spighi, R.; Villa, M.; Zoccoli, A.; Barsukova, O.; Belkov, A.; Belkov, A.; Belotelov, I.; Golutvin, I.; Karpenko, N.; Kiryushin, Y.; Lanyov, A.; Solunin, S.; Bauer, T.S.; Hulsbergen, W.; Sbrizzi, A.; Boecker, M.; Buchholz, P.; Husemann, U.; Keller, S.; Walenta, A.H.; Werthenbach, U.; Bruinsma, M.; Ouchrif, M.; Buran, T.; Danielsen, K.M.; Ould-Saada, F.; Pylypchenko, Y.; Conde, P.; Dam, M.; Groth-Jensen, J.; Hansen, J.D.; Klinkby, E.; Muresan, R.; Petersen, B.A.A.; Xella-Hansen, S.; Deppe, H.; Dreis, H.B.; Eisele, F.; Feuerstack-Raible, M.; Gradl, S.; Gradl, W.; Hott, T.; Kessler, J.; Krauss, C.; Rick, H.; Uwer, U.; Dong, X.; Jiang, C.; Zheng, Z.; Garrido, L.; Peralta, D.; Glaess, J.; Maenner, R.; Wurz, A.; Goloubkov, D.; Somov, S.; Golubkov, Y.; Gorbounov, I.; Zeuner, T.; Gorisek, A.; Kupper, S.; Pestotnik, R.; Skrk, D.; Staric, M.; Zivko, T.; Goulart, D.C.; Schwartz, A.J.; Guilitsky, Y.; Mikhailov, Y.; Ispiryan, M.; Lau, K.; Pyrlik, J.; Subramania, H.S.; Karabekyan, S.; Pernack, R.; Schroeder, H.; Zimmermann, R.; Kolanoski, H.; Kruecker, D.; Lohse, T.; Medin, G.; zur Nedden, M.; Stegmann, C.; Korpar, S.; Kreuzer, P.; Krizan, P.; Stanovnik, A.; Lomonosov, B.; Negodaev, M.; Poli, M.; Pose, D.; Robmann, P.; Shuvalov, S.; Spiridonov, A.; Symalla, M.; van Eldik, C.; Tsakov, I.; Vitale, A.; Vukotic, I.; Wahlberg, H.; Wang, J.J.; Zavertyaev, M.

    2007-01-01

    The inclusive production cross sections of the charmed mesons D 0 , D + , D s + and D *+ have been measured in interactions of 920 GeV protons on C, Ti, and W targets with the HERA-B detector at the HERA storage ring. Differential cross sections as a function of transverse momentum and Feynman's x variable are given for the central rapidity region and for transverse momenta up to p T =3.5 GeV/c. The atomic mass number dependence and the leading to non-leading particle production asymmetries are presented as well. (orig.)

  10. Doktoritööd : [2000

    Index Scriptorium Estoniae

    2000-01-01

    6. okt. 2000 TPÜ-s ökoloogia doktorikraadi kaitsmisnõukogu koosolekul tuleb kaitsmisele Tiiu Alliksaare doktoritöö "Spatial and temporal variability of the distribution of spherical fly-ash particles in sediments in Estonia". 15. dets. 2000 kaitsevad Mart Kivimäe TPÜ kultuuriajaloo doktoritööde kaitsmisnõukogu koosolekul doktoritööd "Dialoogiline historism. Ajaloomõtlemise kolm strateegiat ja nende dialoogisuhted minevikuga saksa teaduskultuuri näitel (R. Kosselleck, J. Rüsen, E. Nolte)" ja Hannes Walter doktoritööd "Eesti teenetemärgid"

  11. Isobaric analogue states of 73Ge via 72Ge(3He,d)73As reaction

    International Nuclear Information System (INIS)

    Ramaswamy, C.R.; Puttaswamy, N.G.; Sarma, N.

    1974-01-01

    The 72 Ge( 3 He,d) 73 As reaction has been studied at 20 MeV incident 3 He energy using an MP tandem and a multigap spectrograph. The energy spectrum of deuterons in the region between 9 to 10.5 MeV excitation energy of 73 As shows analogue states corresponding to G.S., 570, 673, 805, 900, 1050, and 1350 KeV states of 73 Ge. Angular distributions for the analogue states and 1-values of the transferred protons are extracted. The results are compared with available data on the levels of 73 Ge. (author)

  12. D-meson production from 400 GeV/c pp interactions

    International Nuclear Information System (INIS)

    Aguilar-Benitez, M.; Colino, N.; Diez-Hedo, F.

    1987-01-01

    We have measured the inclusive production properties of D and anti D mesons produced from pp interations at √s = 27.4 GeV. The differential production cross section is well represented by the empirical form d 2 σdx F /dP T 2 = 1/2 [σ(D/anti D)(n+1) b](1-vertical strokex F vertical stroke) n exp(-bp T 2 ) with n = 4.9±0.5, b = (1.0±0.1) (GeV/c) -2 , and the inclusive D/anti D cross section σ(D/anti D) is (30.2±3.3) μb. The QCD fusion model predicts D/anti D production which is in good agreement with our data except for the magnitude of the cross section which depends sensitively on the assumed mass of the charm quark. (orig.)

  13. Use of Iodine-based contrast media in digital full-field mammography - initial experience

    International Nuclear Information System (INIS)

    Diekmann, F.; Diekmann, S.; Taupitz, M.; Bick, U.; Winzer, K.-J.; Huettner, C.; Muller, S.; Jeunehomme, F.; Hamm, B.

    2003-01-01

    Aim: To investigate the use of iodine-based contrast media in digital full-field mammography. Methods: After performing initial phantom studies, seven patients underwent digital mammography (Senographe 2000D, GE Medical Systems, Milwaukee, USA) using a specially filtered beam before as well as 60, 120, and 180 seconds after injection of 80 ml of iodine contrast medium (Ultravist 370, Schering AG, Germany). The precontrast mammograms were then subtracted from the postcontrast mammograms and the resulting images compared with a contrast-enhanced dynamic MRI study, performed on all women. Results: Contrast medium accumulation within the tumors was visualized with a good quality in all cases. The conditions under which successful contrast-enhanced digital mammography can be performed were determined in phantom studies. Conclusions: Contrast-enhanced digital mammography has a potential for improving the visualization of breast tumors in mammography using special beam filtering, adjusted X-ray parameters, proper timing, and suitable subtraction software. (orig.) [de

  14. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    International Nuclear Information System (INIS)

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  15. Proposal on the measurements of d-p elastic scattering analyzing powers at 0.3-2.0 GeV at internal target station of the Nuclotron

    International Nuclear Information System (INIS)

    Uesaka, T.; Ladygin, V.P.; Azhgirej, L.S.

    2005-01-01

    A new high-energy beam polarimeter is proposed for the Nuclotron using Internal Target Station. This polarimeter based on the measurement of the asymmetry for the d-p elastic scattering will allow one to measure both vector and tensor components of the deuteron beam polarization simultaneously. For that purpose the measurement of analyzing powers for the d-p elastic scattering at energies T d = 0.88-2 GeV is proposed. The precise measurements of the deuteron analyzing powers over energy range T d 300-2000 MeV can give an irreplaceable clue on the study of spin-dependence of three-nucleon forces

  16. GeAs and SiAs monolayers: Novel 2D semiconductors with suitable band structures

    Science.gov (United States)

    Zhou, Liqin; Guo, Yu; Zhao, Jijun

    2018-01-01

    Two dimensional (2D) materials provide a versatile platform for nanoelectronics, optoelectronics and clean energy conversion. Based on first-principles calculations, we propose a novel kind of 2D materials - GeAs and SiAs monolayers and investigate their atomic structure, thermodynamic stability, and electronic properties. The calculations show that monolayer GeAs and SiAs sheets are energetically and dynamically stable. Their small interlayer cohesion energies (0.191 eV/atom for GeAs and 0.178 eV/atom for SiAs) suggest easy exfoliation from the bulk solids that exist in nature. As 2D semiconductors, GeAs and SiAs monolayers possess band gap of 2.06 eV and 2.50 eV from HSE06 calculations, respectively, while their band gap can be further engineered by the number of layers. The relatively small and anisotropic carrier effective masses imply fast electric transport in these 2D semiconductors. In particular, monolayer SiAs is a direct gap semiconductor and a potential photocatalyst for water splitting. These theoretical results shine light on utilization of monolayer or few-layer GeAs and SiAs materials for the next-generation 2D electronics and optoelectronics with high performance and satisfactory stability.

  17. Production of d, t, 3He, anti d, anti t and anti 3He by 200 GeV protons

    International Nuclear Information System (INIS)

    Bozzoli, W.; Giacomelli, G.; Rimondi, F.; Zylberajch, S.; Lesquoy, E.; Meunier, R.; Moscoso, L.; Muller, A.; Bussiere, A.

    1978-01-01

    Data are presented on the yields of d, t, 3 He, anti d, anti t, and anti 3 He with laboratory momenta between 12 and 37 GeV/c produced by 200 GeV protons on beryllium and aluminium. The production yield of nuclei depends significantly on the target nucleus, while the anti d production is independent of target material. The mass dependence of the production cross section is exponential for both nuclei and antinuclei

  18. Open charm yields in d+Au collisions at squareroot[sNN]=200 GeV.

    Science.gov (United States)

    Adams, J; Aggarwal, M M; Ahammed, Z; Amonett, J; Anderson, B D; Arkhipkin, D; Averichev, G S; Badyal, S K; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellwied, R; Berger, J; Bezverkhny, B I; Bharadwaj, S; Bhasin, A; Bhati, A K; Bhatia, V S; Bichsel, H; Billmeier, A; Bland, L C; Blyth, C O; Bonner, B E; Botje, M; Boucham, A; Brandin, A V; Bravar, A; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Calderón de la Barca Sánchez, M; Castillo, J; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopadhyay, S; Chen, H F; Chen, Y; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Coffin, J P; Cormier, T M; Cramer, J G; Crawford, H J; Das, D; Das, S; de Moura, M M; Derevschikov, A A; Didenko, L; Dietel, T; Dogra, S M; Dong, W J; Dong, X; Draper, J E; Du, F; Dubey, A K; Dunin, V B; Dunlop, J C; Dutta Mazumdar, M R; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Faivre, J; Fatemi, R; Fedorisin, J; Filimonov, K; Filip, P; Finch, E; Fine, V; Fisyak, Y; Fomenko, K; Fu, J; Gagliardi, C A; Gaillard, L; Gans, J; Ganti, M S; Gaudichet, L; Geurts, F; Ghazikhanian, V; Ghosh, P; Gonzalez, J E; Grachov, O; Grebenyuk, O; Grosnick, D; Guertin, S M; Guo, Y; Gupta, A; Gutierrez, T D; Hallman, T J; Hamed, A; Hardtke, D; Harris, J W; Heinz, M; Henry, T W; Hepplemann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffmann, G W; Huang, H Z; Huang, S L; Hughes, E W; Humanic, T J; Igo, G; Ishihara, A; Jacobs, P; Jacobs, W W; Janik, M; Jiang, H; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kaplan, M; Keane, D; Khodyrev, V Yu; Kiryluk, J; Kisiel, A; Kislov, E M; Klay, J; Klein, S R; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kramer, M; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kutuev, R Kh; Kuznetsov, A A; Lamont, M A C; Landgraf, J M; Lange, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lehocka, S; LeVine, M J; Li, C; Li, Q; Li, Y; Lin, G; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, L; Liu, Q J; Liu, Z; Ljubicic, T; Llope, W J; Long, H; Longacre, R S; Lopez-Noriega, M; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahajan, S; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Marx, J N; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Meissner, F; Melnick, Yu; Meschanin, A; Miller, M L; Minaev, N G; Mironov, C; Mischke, A; Mishra, D K; Mitchell, J; Mohanty, B; Molnar, L; Moore, C F; Morozov, D A; Munhoz, M G; Nandi, B K; Nayak, S K; Nayak, T K; Nelson, J M; Netrakanti, P K; Nikitin, V A; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pal, S K; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Petrov, V A; Phatak, S C; Picha, R; Planinic, M; Pluta, J; Porile, N; Porter, J; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Rakness, G; Raniwala, R; Raniwala, S; Ravel, O; Ray, R L; Razin, S V; Reichhold, D; Reid, J G; Renault, G; Retiere, F; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Sahoo, R; Sakrejda, I; Salur, S; Sandweiss, J; Sarsour, M; Savin, I; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Schweda, K; Seger, J; Seyboth, P; Shahaliev, E; Shao, M; Shao, W; Sharma, M; Shen, W Q; Shestermanov, K E; Shimanskiy, S S; Sichtermann, E; Simon, F; Singaraju, R N; Skoro, G; Smirnov, N; Snellings, R; Sood, G; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Suaide, A A P; Sugarbaker, E; Suire, C; Sumbera, M; Surrow, B; Symons, T J M; Szanto de Toledo, A; Szarwas, P; Tai, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thein, D; Thomas, J H; Timoshenko, S; Tokarev, M; Trainor, T A; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Urkinbaev, A; Van Buren, G; van Leeuwen, M; Vander Molen, A M; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Vznuzdaev, M; Waggoner, W T; Wang, F; Wang, G; Wang, G; Wang, X L; Wang, Y; Wang, Y; Wang, Z M; Ward, H; Watson, J W; Webb, J C; Wells, R; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wood, J; Wu, J; Xu, N; Xu, Z; Xu, Z Z; Yamamoto, E; Yepes, P; Yurevich, V I; Zanevsky, Y V; Zhang, H; Zhang, W M; Zhang, Z P; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N

    2005-02-18

    Midrapidity open charm spectra from direct reconstruction of D0(D0)-->K-/+pi+/- in d+Au collisions and indirect electron-positron measurements via charm semileptonic decays in p+p and d+Au collisions at squareroot[sNN]=200 GeV are reported. The D0(D0) spectrum covers a transverse momentum (pT) range of 0.1GeV/c, whereas the electron spectra cover a range of 1GeV/c. The electron spectra show approximate binary collision scaling between p+p and d+Au collisions. From these two independent analyses, the differential cross section per nucleon-nucleon binary interaction at midrapidity for open charm production from d+Au collisions at BNL RHIC is dsigma(NN)cc/dy=0.30+/-0.04(stat)+/-0.09(syst) mb. The results are compared to theoretical calculations. Implications for charmonium results in A+A collisions are discussed.

  19. Inclusive D meson production with the Mark II detector at SPEAR. [3. 9 to 7. 4 GeV (c. m. )

    Energy Technology Data Exchange (ETDEWEB)

    Coles, M.W.

    1980-09-01

    Neutral and charged D meson production cross sections were measured at center-of-mass energies between 3.9 GeV and 7.4 GeV. The quantity R/sub D/(=(sigma/sub D/sup +/+D/sup -// + sigma/sub D/sup 0/+ anti D/sup 0//)/2 sigma/sub ..mu../sup +/..mu../sup -//) is equal to 2 at 4 GeV and 4.4 GeV and about equal to 1 elsewhere. R/sub D/ + 2.5 approximately equals R (sigma/sub hadrons//sigma/sub ..mu../sup +/..mu../sup -//) at all energies. The exclusive cross sections for e/sup +/e/sup -/ annihilation into D anti D, D* anti D, and D* anti D* were measured at center-of-mass energies between 3.9 GeV and 4.3 GeV. sigma/sub D* anti D*/ decreases with increasing center-of-mass energy from 6.6 +- 1.3 nb near 4 GeV to 3.6 +- .9 nb near 4.3 GeV. sigma/sub D* anti D/ also decreases from 4.2 +- .9 nb to 1.8 +- .6 nb over the same energy region. sigma/sub D anti D/ is less than 0.5 +- .3 nb at all energies. The branching fractions for D*/sup +/ and D* decay were measured. B/sub D*/sup 0/..-->..D/sup 0/..pi../sup 0// = 0.5 +- .09, B/sub D*/sup +/..-->..D/sup 0/..pi../sup +// = 0.44 +- .10, and B/sub D*/sup +/..-->..D/sup +/..pi../sup 0// = 0.31 +- .07. At 5.2 GeV, the D meson differential cross section is well described by phase space for e/sup +/e/sup -/ ..-->.. D anti D..pi pi.. or D* anti D*..pi pi... Sd sigma/dz was parameterized as A(1-z)/sup n/ with n = 0.9 +- .4. Quasi-two-body production accounts for less than 20% of the total D cross section. No evidence was found for associated charmed baryon-D meson production. An upper limit of 0.4 nb (90% confidence level) was determined for associated production. 41 figures, 12 tables.

  20. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  1. SANS-1 Experimental reports of 2000

    International Nuclear Information System (INIS)

    Willumeit, R.; Haramus, V.

    2001-01-01

    The instrument SANS-1 at the Geesthacht neutron facility GeNF was used for scattering experiments in 2000 at 196 of 200 days of reactor and cold source operation. The utilisation was shared between the in-house R and D program and user groups from different universities and research centers. These measurements were performed and analysed either by guest scientists or GKSS staff. The focus of the work in 2000 at the experiment SANS-1 was the structural investigation of hydrogen containing substances such as biological macromolecules (ribosomes, protein-RNA-complexes, protein solutions, glycolipids and membranes), molecules which are important in the fields of environmental research (refractoric organic substances) and technical chemistry (surfactants, micelles). (orig.) [de

  2. Measurement of the Deuteron Spin Structure Function g_1^d(x) for 1 (GeV/c)^2 < Q^2 < 40 (GeV/c)^2

    OpenAIRE

    E155 Collaboration

    1999-01-01

    New measurements are reported on the deuteron spin structure function g_1^d. These results were obtained from deep inelastic scattering of 48.3 GeV electrons on polarized deuterons in the kinematic range 0.01 < x < 0.9 and 1 < Q^2 < 40 (GeV/c)^2. These are the first high dose electron scattering data obtained using lithium deuteride (6Li2H) as the target material. Extrapolations of the data were performed to obtain moments of g_1^d, including Gamma_1^d, and the net quark polarization Delta Si...

  3. Measurement of the deuteron spin structure function $g^{d}_1(x)$ for $1\\ (GeV/c)^2 < Q^2 < 40\\ (GeV/c)^2$.

    OpenAIRE

    Anthony , P.L.; Arnold , R.G.; Averett , T.; Band , H.R.; Berisso , M.C.; Borel , H.; Bosted , P.E.; Bultmann , S.L.; Buenerd , M.; Chupp , T.; Churchwell , S.; Court , G.R.; Crabb , D.; Day , D.; Decowski , P.

    1999-01-01

    New measurements are reported on the deuteron spin structure function g_1^d. These results were obtained from deep inelastic scattering of 48.3 GeV electrons on polarized deuterons in the kinematic range 0.01 < x < 0.9 and 1 < Q^2 < 40 (GeV/c)^2. These are the first high dose electron scattering data obtained using lithium deuteride (6Li2H) as the target material. Extrapolations of the data were performed to obtain moments of g_1^d, including Gamma_1^d, and the net quark polarization Delta Si...

  4. Preliminary results from the 2000 run of CERES on low-mass $e^{+}e^{-}$ pair production in Pb - Au collisions at 158 A GeV

    CERN Document Server

    Cherlin, A

    2004-01-01

    CERES has measured low-mass $e^{+}e^{-}$ pairs in Pb- Au collisions at 158 A GeV in the year 2000 Pb run at the SPS with the goal of shedding more light on the origin of the previously observed low-mass pair enhancement. The spectrometer was upgraded with a radial TPC to improve the mass resolution. A very effective rejection of the combinatorial background is achieved using the combined information of the two RICH detectors, the d$E$/dx signal of the doublet of silicon drift chambers, and the TPC track d$E$/dx information. Various steps and the current status of the data analysis are presented. Corrigendum. Table 1 and figures 3 and 4, as originally published, represent an earlier version of the data analysis. The corrected table and figures have been published as a Corrigendum (see below). The Corrigendum has also been appended at the end of the PDF file linked to this page.

  5. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

    International Nuclear Information System (INIS)

    Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

    2007-01-01

    The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

  6. Initial evaluation of a full breast digital system

    International Nuclear Information System (INIS)

    Vano, E.; Fernandez, J.M.; Chevalier, M.; Moran, P.; Cepeda, T.; Fabra, A.; Alvarez Pedrosa, C.S.

    2001-01-01

    Full-field digital mammography systems have been developed for overcoming the limitations of the screen-film mammography. This work is focused on the system from GE Medical Systems (Senographe 2000) which has been recently installed in our institution. The imager consists of a thin Ics:Tl scintillator which is in narrow contact with an array of amorphous silicon detectors mounted in a single panel. The flat-panel detector is integrated in a x-ray system with a high-frequency generator Senographe DM and dual track anode of Mo and Rh with Mo and Rh filtration. The aim of this work is to analyse the defaults exposure factors set at the installation of the x-ray unit. The image quality has been evaluated by using one of the two phantoms recommended in the ACR Accreditation Program. Phantom images were obtained at each of the three available imaging modes: contrast (CNT), standard (STD) and DOSE. While maintaining the defaults of kilovoltage and anode/filter combination, phantom images were obtained at lower dose vales. The contrast noise ratio (CNR) was calculated for each of the low contrast objects (masses) of the phantom images and the detail visibility was also evaluated. The results obtained for both parameters reveal that similar image quality can be obtained with significant reductions of the average glandular dose. (author)

  7. 3D hollow framework of GeOx with ultrathin shell for improved anode performance in lithium-ion batteries

    International Nuclear Information System (INIS)

    Fang, Zhen; Qiang, Tingting; Fang, Jiaxin; Song, Yixuan; Ma, Qiuyang; Ye, Ming; Qiang, Feiqiang; Geng, Baoyou

    2015-01-01

    Highlights: • 3D hollow framework of GeO x was synthesized using hydrothermal procedure. • The obtained GeO x 3D hollow framework has large surface area and porous thin shell. • The structure improved the cycle and rate performances. - Abstract: In this paper, 3D hollow framework of GeO x is synthesized using a bubble-template hydrothermal procedure. The as-obtained hollow structure exhibits excellent cycling performance and rate capability in comparison with GeO x nanoparticles when used as an anode material in lithium ion batteries. The GeO x 3D hollow framework shows a high capacity of up to 1480 mAh·g −1 and 1109 mAh·g −1 at 80 mA·g −1 and 1600 mA·g −1 current density, respectively. The excellent lithium storage performance can be attributed to the unique 3D hollow framework. The framework not only acts as the buffer layer to alleviate the strain during lithiation, but also facilitates the electron transfer during the charge/discharge processes

  8. GE3D: A Virtual Campus for Technology-Enhanced Distance Learning

    Directory of Open Access Journals (Sweden)

    Jean Grieu

    2010-09-01

    Full Text Available A lot of learning systems platforms are used all over the world. But these conventional E-learning platforms aim at students who are used to work on their own. Our students are young (19 years old – 22 years old, and in their first year at the university. Following extensive interviews with our students, we have designed GE3D, an E-learning platform, according to their expectations and our criteria. In this paper, we describe the students’ demands, resulting from the interviews. Then, we describe our virtual campus. Even if our platform uses some elements coming from the 3D games world, it is always a pedagogical tool. Using this technology, we developed a 3D representation of the real world. GE3D is a multi-users tool, with a synchronous technology, an intuitive interface for end-users and an embedded Intelligent Tutoring System to support learners. We also describe the process of a lecture on the Programmable Logic Controllers (PLC’s in this new universe.

  9. Production of $D^{\\pm}$ Mesons in $K^+$ Nucleon Collisions at 250 GeV

    Energy Technology Data Exchange (ETDEWEB)

    da Motta Filho, Helio [Rio de Janeiro, CBPF

    1993-11-01

    The $X_f$, $P^2_t$ and $p_t$ distribution of $D^{\\pm}$ mesons produced by 250 GeV $K^+$-nucleon interactions are measured through the decay channel $D^{\\pm} \\to K^{\\mp}\\pi^{\\pm} \\pi^{\\pm}$....

  10. GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    Science.gov (United States)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-01

    Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO2/Si counterparts.

  11. A Measurement of D+ and D(s) Production in e+ e- Annihilation at s** 1/2 = 29 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Durrett, D.

    2004-06-02

    Measurements have been made of the production rates of D{sup +} and D{sub s} mesons via the channels D{sup +}-{bar K}*{sup 0} {ell}{sup +}{nu}{sub {ell}} and D{sub s} {yields} {phi}{pi} in e{sup +}e{sup -} annihilation at {radical}s = 29 GeV in 220 pb{sup -1} of data collected by the Mark II detector. The measurements assume the current branching ratios, measured predominantly at {radical}s {approx_equal} 10 GeV and by fixed target experiments. Measurements of the total production cross-sections times the appropriate branching ratios, which are independent of any other measurements, and an upper limit for the ratio of branching ratios, {Lambda}(D{sub s} {yields} {phi}{ell}{bar {nu}}{sub {ell}})/{Lambda}(D{sub s} {yields} {phi}{pi}) < .74 at 90% confidence level are presented. It is found that the production cross-section of D{sup +} mesons is {sigma}(e{sup +}e{sup -} {yields} D{sup +}X) = .24 {+-} .06 {+-} .04 nb while the production cross-section for D{sub s} mesons is {sigma}(e{sup +}e{sup -} {yields} D{sub s}X) = .10 {+-} .04 {+-} .03 nb. This corresponds to .23 {+-} .06 {+-} D{sup +}/hadronic event and .09 {+-} .04 {+-} .02 D{sub s}/hadronic event.

  12. Year 2000 Certification of Mission-Critical DoD Information Technology Systems

    National Research Council Canada - National Science Library

    1998-01-01

    Our objective was to determine whether the year 2000 certification process is adequate to ensure that mission critical DoD information technology systems will continue to operate properly after the year 2000...

  13. Fluoride removal from double four-membered ring (D4R) units in As-synthesized Ge-containing zeolites

    KAUST Repository

    Liu, Xiaolong

    2011-11-22

    Fluoride anions can be removed from the framework of as-prepared Ge-containing zeolites ITQ-13 and ITQ-17 without modification of the crystallinity and crystal habit. By contrast to all-silica ITQ-13 for which fluoride could not get out from D4R units, F is completely removed from Ge rich zeolites, even from D4R cages. This has been explained by the relaxing effect of germanium, making F less necessary for the stabilization of the small D4R units. Si/Ge ratios are similar in as-prepared and treated zeolites, indicating that the framework composition is not affected by the removal of anions. The fluoride-free zeolites possess XRD patterns similar to those of the as-made solids but their 29Si NMR spectra are significantly different, revealing the sensitivity of the method to the environment of silicon atoms in the framework. The extent of fluoride that can be removed from D4R units depends not only on the framework Ge content but also on the zeolite topology: for similar contents, F is much more easily eliminated from ITQ-17 than from ITQ-13. © 2011 American Chemical Society.

  14. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    OpenAIRE

    Pan, Hsuan-yu

    2010-01-01

    This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

  15. Preparation of special purity Ge - S - I and Ge - Se - I glasses

    Science.gov (United States)

    Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Kotereva, T. V.; Snopatin, G. E.; Churbanov, M. F.

    2017-05-01

    The paper considers the new approaches for the production of special pure Ge - S - I and Ge - Se - I glasses via the germanium(IV) iodide, germanium(II) sulfide, as well as the Ge2S3, Ge2S3I2 and Ge2Se3I2 glassy alloys. The glass samples containing 0.03-0.17 ppm(wt) hydrogen impurity in the form of SH-group, 0.04-0.15 ppm(wt) hydrogen impurity in the form of SeH-group, and 0.5-7.8 ppm(wt) oxygen impurity in the form of Ge-O were produced. Using a crucible technique, the single-index [GeSe4]95I5 glass fibers of 300-400 μm diameter were drawn. The minimum optical losses in the best fiber were 1.7 dB/m at a wavelength of 5.5 μm; the background optical losses were within 2-3 dB/m in the spectral range of 2.5-8 μm.

  16. Production of D* mesons in photon-photon collisions at $\\sqrt{s}_{ee}$ = 183 GeV and 189 GeV using the OPAL detector at LEP

    CERN Document Server

    Patt, J

    2000-01-01

    The inclusive production of D*/sup +or-/ mesons in photon-photon collisions has been measured using the OPAL detector at LEP at e/sup +/e/sup -/ centre-of-mass energies square root (s/sub ee/) of 183 and 189 GeV. The D*/sup +/ mesons are reconstructed in their decay to D /sup 0/ pi /sup +/ with the D/sup 0/ observed in the two decay modes K/sup -/ pi /sup +/ and K/sup -/ pi /sup +/ pi /sup -/ pi /sup +/. After background subtraction, 121+or-14 (stat.) D*/sup +or-/ events have been selected. Jets are reconstructed using a cone jet finding algorithm to separate direct and single-resolved events. Differential cross-sections d sigma /dp/sub T//sup D/* and d sigma /d eta /sup D /* as functions of the D*/sup +or-/ transverse momentum p/sub T//sup D/* and pseudorapidity eta /sup D/* are presented in the kinematic region 2

    D/*<12 GeV and eta /sup D/*<1.5. They are compared to next-to-leading order (NLO) perturbative QCD calculations. The total cross-section for the process e/sup +/e/sup - / to ...

  17. Dissociative multiple photoionization of SiBr4 and GeBr4 in the VUV and X-ray regions: a comparative study of inner-shell processes involving Si(2p, 2s), Ge(3d, 3p, 3s), and Br(3d, 3p, 3s)

    International Nuclear Information System (INIS)

    Boo, Bong Hyun; Saito, Norio

    2003-01-01

    Dissociative multiple photoionization of MBr 4 (M=Si, Ge) in the Si(2p, 2s), Ge(3d, 3s, 3p), and Br(3d, 3p, 3s) inner-shell regions has been studied by using time-of-flight (TOF) mass spectrometry coupled to synchrotron radiation in the ranges of 50∼944 eV for SiBr 4 and 50∼467 eV for GeBr 4 . Total photoion and photoion-photoion coincidence (PIPICO) yields have been measured as functions of the photon energy. Here, giant shape resonances have been observed beyond the thresholds of the 3d shells owing to the Br(3d 10 )→Br(3d 9 -f) excitation, showing the similar patterns for both of the systems. The ranges and the intensities of the shape resonances are found to be tremendously broad and enhanced, respectively, by the tetrahedral arrangement of the bromine ligands. In addition to the giant resonances, we have observed discrete features corresponding to the Br(3d), Si(2p), and Si(2s) in SiBr 4 and to the Br(3d), Ge(3p), and Ge(3s) in GeBr 4 . The dissociation processes of multiply charged parent ions have also been evaluated from the variations of photoelectron-photoion coincidence (PEPICO) and PIPICO yields with the photon energy. Over the entire energies examined, most efficient PIPICO channels involve Br + -Br + , Br + -MBr + , and M + -Br + (M=Si, Ge), the formation of which indicates that the total destruction of the molecules is a dominant process in the dissociative photoionization of the molecules

  18. Measurements of T20 in backward elastic d p scattering at deuteron momenta 3.5 - 6 GeV/c

    International Nuclear Information System (INIS)

    Azhgirej, L.S.; Borzunov, Yu.T.; Chernykh, E.V.

    1994-01-01

    We present results of measurements of the tensor analyzing power T 20 in d p backward elastic scattering at initial deuterons momenta 3.5-6.0 GeV/c, which corresponds to the range of internal momentum of the deuteron constituents k = 0.5 - 0.8 GeV/c. New structure was observed at k = 0.65 GeV/c. Difference between behavior of T 20 for d p backward elastic scattering and for breakup reaction, which have a smooth behavior of T 20 at high k, is discussed. 12 refs.; 3 figs. (author)

  19. Large-area selective CVD epitaxial growth of Ge on Si substrates

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.; Nanver, L.K.

    2011-01-01

    Selective epitaxial growth of crystalline Ge on Si in a standard ASM Epsilon 2000 CVD reactor is investigated for the fabrication of Ge p+n diodes. At the deposition temperature of 700?C, most of the lattice mismatch-defects are trapped within first 300nm of Ge growth and good quality single crystal

  20. Modeling of GE Appliances in GridLAB-D: Peak Demand Reduction

    Energy Technology Data Exchange (ETDEWEB)

    Fuller, Jason C.; Vyakaranam, Bharat GNVSR; Prakash Kumar, Nirupama; Leistritz, Sean M.; Parker, Graham B.

    2012-04-29

    The widespread adoption of demand response enabled appliances and thermostats can result in significant reduction to peak electrical demand and provide potential grid stabilization benefits. GE has developed a line of appliances that will have the capability of offering several levels of demand reduction actions based on information from the utility grid, often in the form of price. However due to a number of factors, including the number of demand response enabled appliances available at any given time, the reduction of diversity factor due to the synchronizing control signal, and the percentage of consumers who may override the utility signal, it can be difficult to predict the aggregate response of a large number of residences. The effects of these behaviors can be modeled and simulated in open-source software, GridLAB-D, including evaluation of appliance controls, improvement to current algorithms, and development of aggregate control methodologies. This report is the first in a series of three reports describing the potential of GE's demand response enabled appliances to provide benefits to the utility grid. The first report will describe the modeling methodology used to represent the GE appliances in the GridLAB-D simulation environment and the estimated potential for peak demand reduction at various deployment levels. The second and third reports will explore the potential of aggregated group actions to positively impact grid stability, including frequency and voltage regulation and spinning reserves, and the impacts on distribution feeder voltage regulation, including mitigation of fluctuations caused by high penetration of photovoltaic distributed generation and the effects on volt-var control schemes.

  1. The Hunt for the Higgs Exhibition LEPFest 2000

    CERN Multimedia

    2000-01-01

    On 5 September 2000,a number of events compatible with the production of a Higgs boson with mass around 114-115 GeV was reported in the combined results of the four LEP experiments,ALEPH,DELPHI,L3 and OPAL.However, these events are also compatible with originating from other known Standard Model processes.As a consequence, it is at present impossible either to rule out or confirm the existence of a 114-115 GeV Higgs boson.The prolongation of LEP running through October 2000 is the response to this tantalizing situation.

  2. Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation

    International Nuclear Information System (INIS)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Xiong, Yuhua; Zhang, Jing; Zhao, Chao

    2015-01-01

    Highlights: • The dominant key to achieve superior Ge passivation by GeO x is investigated. • The interface state density decreases with increasing the GeO x thickness. • The Ge 3+ oxide component is the dominant key to passivate the Ge surface. • The atomic structure at the GeO x /Ge interface is built by XPS. - Abstract: The dominant key to achieve superior Ge surface passivation by GeO x interfacial layer is investigated based on ozone oxidation. The interface state density (D it ) measured from low temperature conduction method is found to decrease with increasing the GeO x thickness (0.26–1.06 nm). The X-ray photoelectron spectroscopy (XPS) is employed to demonstrate the interfacial structure of GeO x /Ge with different GeO x thicknesses. And the XPS results show that Ge 3+ oxide component is responsible to the decrease of the D it due to the effective passivation of Ge dangling bonds. Therefore, the formation of Ge 3+ component is the dominant key to achieve low D it for Ge gate stacks. Our work confirms that the same physical mechanism determines the Ge surface passivation by the GeO x regardless of the oxidation methods to grow the GeO x interfacial layer. As a result, to explore a growth process that can realize sufficient Ge 3+ component in the GeO x interlayer as thin as possible is important to achieve both equivalent oxide thickness scaling and superior interfacial property simultaneously. This conclusion is helpful to engineer the optimization of the Ge gate stacks.

  3. Measurements of Multiparticle Correlations in d +Au Collisions at 200, 62.4, 39, and 19.6 GeV and p +Au Collisions at 200 GeV and Implications for Collective Behavior

    Science.gov (United States)

    Aidala, C.; Akiba, Y.; Alfred, M.; Andrieux, V.; Aoki, K.; Apadula, N.; Asano, H.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bagoly, A.; Bandara, N. S.; Barish, K. N.; Bathe, S.; Bazilevsky, A.; Beaumier, M.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Blau, D. S.; Boer, M.; Bok, J. S.; Brooks, M. L.; Bryslawskyj, J.; Bumazhnov, V.; Butler, C.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Citron, Z.; Connors, M.; Cronin, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dion, A.; Dixit, D.; Do, J. H.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Elder, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukuda, Y.; Gal, C.; Gallus, P.; Garg, P.; Ge, H.; Giordano, F.; Goto, Y.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; He, X.; Hemmick, T. K.; Hill, J. C.; Hill, K.; Hodges, A.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Imai, K.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jezghani, M.; Ji, Z.; Jiang, X.; Johnson, B. M.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kang, J. H.; Kapukchyan, D.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Khachatryan, V.; Khanzadeev, A.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, M.; Kim, M. H.; Kincses, D.; Kistenev, E.; Klatsky, J.; Kline, P.; Koblesky, T.; Kotov, D.; Kudo, S.; Kurita, K.; Kwon, Y.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, S.; Lee, S. H.; Leitch, M. J.; Leung, Y. H.; Lewis, N. A.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Lökös, S.; Lovasz, K.; Lynch, D.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malaev, M.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Mendoza, M.; Metzger, W. J.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Murakami, T.; Murata, J.; Nagai, K.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakano, K.; Nattrass, C.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pantuev, V.; Papavassiliou, V.; Park, J. S.; Park, S.; Pate, S. F.; Patel, M.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Radzevich, P. V.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Runchey, J.; Safonov, A. S.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seidl, R.; Sen, A.; Seto, R.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Skoby, M. J.; Slunečka, M.; Smith, K. L.; Snowball, M.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Syed, S.; Sziklai, J.; Takeda, A.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Towell, C. L.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vazquez-Carson, S.; Velkovska, J.; Virius, M.; Vrba, V.; Vukman, N.; Wang, X. R.; Wang, Z.; Watanabe, Y.; Watanabe, Y. S.; Wong, C. P.; Woody, C. L.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yoo, J. H.; Yoon, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zou, L.; Phenix Collaboration

    2018-02-01

    Recently, multiparticle-correlation measurements of relativistic p /d /He 3 +Au , p +Pb , and even p +p collisions show surprising collective signatures. Here, we present beam-energy-scan measurements of two-, four-, and six-particle angular correlations in d +Au collisions at √{sN N}=200 , 62.4, 39, and 19.6 GeV. We also present measurements of two- and four-particle angular correlations in p +Au collisions at √{sN N}=200 GeV . We find the four-particle cumulant to be real valued for d +Au collisions at all four energies. We also find that the four-particle cumulant in p +Au has the opposite sign as that in d +Au . Further, we find that the six-particle cumulant agrees with the four-particle cumulant in d +Au collisions at 200 GeV, indicating that nonflow effects are subdominant. These observations provide strong evidence that the correlations originate from the initial geometric configuration, which is then translated into the momentum distribution for all particles, commonly referred to as collectivity.

  4. A production in anti p - d interactions below 1 GeV/c

    International Nuclear Information System (INIS)

    Smith, D.W.; Billiris, B.; Mandelkern, L.R.; Price, L.R.; Schultz, J.

    1979-01-01

    382 Λ events have been measured and analyzed in an anti p - d bubble chamber experiment at 552, 740, and 905 MeV/c. We compare our data with two other anti p - d experiments at beam momenta from 1 to 3 GeV/c. Some features of the double scattering mechanism are calculated using an anti K and anti Λ as the exchanged particles. The anti K exchange appears to be a more likely candidate for the production mechanism. (auth)

  5. Volumetric breast density estimation from full-field digital mammograms.

    Science.gov (United States)

    van Engeland, Saskia; Snoeren, Peter R; Huisman, Henkjan; Boetes, Carla; Karssemeijer, Nico

    2006-03-01

    A method is presented for estimation of dense breast tissue volume from mammograms obtained with full-field digital mammography (FFDM). The thickness of dense tissue mapping to a pixel is determined by using a physical model of image acquisition. This model is based on the assumption that the breast is composed of two types of tissue, fat and parenchyma. Effective linear attenuation coefficients of these tissues are derived from empirical data as a function of tube voltage (kVp), anode material, filtration, and compressed breast thickness. By employing these, tissue composition at a given pixel is computed after performing breast thickness compensation, using a reference value for fatty tissue determined by the maximum pixel value in the breast tissue projection. Validation has been performed using 22 FFDM cases acquired with a GE Senographe 2000D by comparing the volume estimates with volumes obtained by semi-automatic segmentation of breast magnetic resonance imaging (MRI) data. The correlation between MRI and mammography volumes was 0.94 on a per image basis and 0.97 on a per patient basis. Using the dense tissue volumes from MRI data as the gold standard, the average relative error of the volume estimates was 13.6%.

  6. Open Charm Yields in d+Au Collisions at √sNN = 200 GeV

    International Nuclear Information System (INIS)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; De Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumda, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gaillard, L.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.F.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry, T.W.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Ivanshin, Yu.I.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Koetke, D.D.; Kollegger, T.; Kopytine, S.M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.

    2005-01-01

    Mid-rapidity open charm spectra from direct reconstruction of D 0 ((bar D) 0 ) → K ± π ± in d+Au collisions and indirect electron/positron measurements via charm semileptonic decays in p+p and d+Au collisions at √s NN = 200 GeV are reported. The D 0 ((bar D) 0 ) spectrum covers a transverse momentum (p T ) range of 0.1 T T cbar c NN /dy = 0.30 ± 0.04 (stat.) ± 0.09(syst.) mb. The results are compared to theoretical calculations. Implications for charmonium results in A+A collisions are discussed

  7. Progress report 1999-2000; Rapport d'activite 1999-2000

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-07-01

    This document presents the activities of the CENBG for the 1999 and 2000 years. The activities are arranged into 7 topics: 1) astro-particles, 2) high spins and big deformations, 3) fundamental interactions, 4) exotic nuclei, 5) the down end of the nuclear fuel cycle and ADS (accelerator driven system), 6) theoretical physics and 7) at the interface between physics and biology. Among a lot of achievements relevant to INIS we can note: -) the investigation of 2 new modes of decay: the bound internal conversion and the Pauli forbidden bound internal conversion, -) the progress made on the Nemo-3 experiment whose purpose is the possibility of detecting the neutrinoless double beta decay from the kinematics specificities of the 2 electrons released, -) the first observation of the doubly-magic nucleus Ni{sup 48}, -) the beta delayed proton and gamma -ray spectroscopy of Mg{sup 21} and Si{sup 25} nuclei, -) the identification of the fundamental state of Li{sup 10}, -) the measurement of the masses of nuclei close to N = Z line in the region A = 80, -) the measurement of the beta decay of Ga{sup 62} (T = 116 ms), and concerning ADS technology: -) the neutron capture cross-section of Th{sup 232} has been measured in the energy range from 60 keV to 2 MeV, -) the determination of neutron induced fission cross-section of Pa{sup 233} in the fast neutron energy range from 0.5 to 10 MeV, and -) the measurement of isotopic distributions for all residual elements from Ti to Pb produced in the reaction 1 A.GeV Pb{sup 208} on proton. (A.C.)

  8. Scaling of charged particle production in d+Au collisions at √(sNN)=200GeV

    Science.gov (United States)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.

    2005-09-01

    The measured pseudorapidity distributions of primary charged particles over a wide pseudorapidity range of |η|≤5.4 and integrated charged particle multiplicities in d+Au collisions at √(sNN)=200GeV are presented as a function of collision centrality. The longitudinal features of d+Au collisions at √(sNN)=200GeV are found to be very similar to those seen in p+A collisions at lower energies. The total multiplicity of charged particles is found to scale with the total number of participants according to NdAuch=1/2Nppch, and the energy dependence of the density of charged particles produced in the fragmentation region exhibits extended longitudinal scaling.

  9. Numerical simulation of Ge solar cells using D-AMPS-1D code

    Energy Technology Data Exchange (ETDEWEB)

    Barrera, Marcela, E-mail: barrera@tandar.cnea.gov.ar [Comision Nacional de Energia Atomica, Avenida General Paz 1499, San Martin 1650, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Rubinelli, Francisco [Instituto de Desarrollo Tecnologico para la Industria Quimica (INTEC)-CONICET, Gueemes 3450, Santa Fe 3000 (Argentina); Rey-Stolle, Ignacio [Instituto de Energia Solar, Universidad Politecnica de Madrid, Avenida Complutense 30, Madrid 28040 (Spain); Pla, Juan [Comision Nacional de Energia Atomica, Avenida General Paz 1499, San Martin 1650, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina)

    2012-08-15

    A solar cell is a solid state device that converts the energy of sunlight directly into electricity by the photovoltaic effect. When light with photon energies greater than the band gap is absorbed by a semiconductor material, free electrons and free holes are generated by optical excitation in the material. The main characteristic of a photovoltaic device is the presence of internal electric field able to separate the free electrons and holes so they can pass out of the material to the external circuit before they recombine. Numerical simulation of photovoltaic devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. The electrical transport and the optical behavior of the solar cells discussed in this work were studied with the simulation code D-AMPS-1D. This software is an updated version of the one-dimensional (1D) simulation program Analysis of Microelectronic and Photonic Devices (AMPS) that was initially developed at The Penn State University, USA. Structures such as homojunctions, heterojunctions, multijunctions, etc., resulting from stacking layers of different materials can be studied by appropriately selecting characteristic parameters. In this work, examples of cells simulation made with D-AMPS-1D are shown. Particularly, results of Ge photovoltaic devices are presented. The role of the InGaP buffer on the device was studied. Moreover, a comparison of the simulated electrical parameters with experimental results was performed.

  10. Numerical simulation of Ge solar cells using D-AMPS-1D code

    International Nuclear Information System (INIS)

    Barrera, Marcela; Rubinelli, Francisco; Rey-Stolle, Ignacio; Plá, Juan

    2012-01-01

    A solar cell is a solid state device that converts the energy of sunlight directly into electricity by the photovoltaic effect. When light with photon energies greater than the band gap is absorbed by a semiconductor material, free electrons and free holes are generated by optical excitation in the material. The main characteristic of a photovoltaic device is the presence of internal electric field able to separate the free electrons and holes so they can pass out of the material to the external circuit before they recombine. Numerical simulation of photovoltaic devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. The electrical transport and the optical behavior of the solar cells discussed in this work were studied with the simulation code D-AMPS-1D. This software is an updated version of the one-dimensional (1D) simulation program Analysis of Microelectronic and Photonic Devices (AMPS) that was initially developed at The Penn State University, USA. Structures such as homojunctions, heterojunctions, multijunctions, etc., resulting from stacking layers of different materials can be studied by appropriately selecting characteristic parameters. In this work, examples of cells simulation made with D-AMPS-1D are shown. Particularly, results of Ge photovoltaic devices are presented. The role of the InGaP buffer on the device was studied. Moreover, a comparison of the simulated electrical parameters with experimental results was performed.

  11. The inclusive jet cross section at √s = 630 GeV at D0

    International Nuclear Information System (INIS)

    Krane, J.

    1996-09-01

    The authors present a preliminary measurement of the cross section for central inclusive jet production at √s = 630 GeV using ∼ 400 nb -1 of data collected during the December 1995 Fermilab collider run at D0. These results are compared to NLO QCD predictions

  12. Search strange (S = -2) dibaryons in the reaction K-+d->K++MM at 1,4 GeV/c

    International Nuclear Information System (INIS)

    D'Agostini, G.; Auriemma, G.; Marini, G.; Martellotti, G.; Massa, F.; Nigro, A.; Rambaldi, A.; Sciubba, A.

    1982-01-01

    The reaction K - + d -> K + + MM has been studied at 1.4 GeV/c, to search for Q = -1, S = -2 dibaryonic states, in the mass range approx.= 2.1-2.5 GeV/c 2 . No evidence for the presence of structures has been found and upper limits for the backward production differential cross section for narrow states are established. (orig.)

  13. The LEP 2 machine : pushing to the limits 209 GeV! Exhibition LEPFest 2000

    CERN Multimedia

    2000-01-01

    By installing 288 new superconducting accelerating cavities after 1995,and thanks to the excellent work of the CERN teams,energies up to 209 GeV -well beyond LEP 's original design energy -have been achieved.Significant experi- mental data have been collected at energies in excess of 206 GeV.

  14. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

    International Nuclear Information System (INIS)

    Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.; Keyes, B. M.

    2000-01-01

    Minority carrier lifetimes and interface recombination velocities for GaAs grown on a Si wafer using compositionally graded GeSi buffers have been investigated as a function of GaAs buffer thickness using monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of antiphase domain disorder, with threading dislocation densities measured by etch pit density of 5x10 5 -2x10 6 cm -2 . Analysis indicates no degradation in either minority carrier lifetime or interface recombination velocity down to a GaAs buffer thickness of 0.1 μm. In fact, record high minority carrier lifetimes exceeding 10 ns have been obtained for GaAs on Si with a 0.1 μm GaAs buffer. Secondary ion mass spectroscopy reveals that cross diffusion of Ga, As, and Ge at the GaAs/Ge interface formed on the graded GeSi buffers are below detection limits in the interface region, indicating that polarity control of the GaAs/Ge interface formed on GeSi/Si substrates can be achieved. (c) 2000 American Institute of Physics

  15. Pseudorapidity Asymmetry and Centrality Dependence of Charged Hadron Spectra in d+Au collisions at √sNN = 200 GeV

    International Nuclear Information System (INIS)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; Moura, M.M. de; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gaillard, L.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry, T.W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Koetke, D.D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; Kutuev, R.Kh.

    2005-01-01

    The pseudorapidity asymmetry and centrality dependence of charged hadron spectra in d+Au collisions at √s NN = 200 GeV are presented. The charged particle density at mid-rapidity, its pseudorapidity asymmetry and centrality dependence are reasonably reproduced by a Multi-Phase Transport model, by HIJING, and by the latest calculations in a saturation model. Ratios of transverse momentum spectra between backward and forward pseudorapidity are above unity for p T below 5 GeV/c. The ratio of central to peripheral spectra in d+Au collisions shows enhancement at 2 T < 6 GeV/c, with a larger effect at backward rapidity than forward rapidity. Our measurements are in qualitative agreement with gluon saturation and in contrast to calculations based on incoherent multiple partonic scatterings

  16. Optical response of Cu3Ge thin films

    OpenAIRE

    Aboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.

    1996-01-01

    We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the ...

  17. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    Energy Technology Data Exchange (ETDEWEB)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  18. DYNA3D2000*, Explicit 3-D Hydrodynamic FEM Program

    International Nuclear Information System (INIS)

    Lin, J.

    2002-01-01

    1 - Description of program or function: DYNA3D2000 is a nonlinear explicit finite element code for analyzing 3-D structures and solid continuum. The code is vectorized and available on several computer platforms. The element library includes continuum, shell, beam, truss and spring/damper elements to allow maximum flexibility in modeling physical problems. Many materials are available to represent a wide range of material behavior, including elasticity, plasticity, composites, thermal effects and rate dependence. In addition, DYNA3D has a sophisticated contact interface capability, including frictional sliding, single surface contact and automatic contact generation. 2 - Method of solution: Discretization of a continuous model transforms partial differential equations into algebraic equations. A numerical solution is then obtained by solving these algebraic equations through a direct time marching scheme. 3 - Restrictions on the complexity of the problem: Recent software improvements have eliminated most of the user identified limitations with dynamic memory allocation and a very large format description that has pushed potential problem sizes beyond the reach of most users. The dominant restrictions remain in code execution speed and robustness, which the developers constantly strive to improve

  19. Observation of D0 meson nuclear modifications in Au+Au collisions at sqrt[s(NN)] = 200 GeV.

    Science.gov (United States)

    Adamczyk, L; Adkins, J K; Agakishiev, G; Aggarwal, M M; Ahammed, Z; Alekseev, I; Alford, J; Anson, C D; Aparin, A; Arkhipkin, D; Aschenauer, E C; Averichev, G S; Banerjee, A; Beavis, D R; Bellwied, R; Bhasin, A; Bhati, A K; Bhattarai, P; Bichsel, H; Bielcik, J; Bielcikova, J; Bland, L C; Bordyuzhin, I G; Borowski, W; Bouchet, J; Brandin, A V; Brovko, S G; Bültmann, S; Bunzarov, I; Burton, T P; Butterworth, J; Caines, H; Calderón de la Barca Sánchez, M; Cebra, D; Cendejas, R; Cervantes, M C; Chaloupka, P; Chang, Z; Chattopadhyay, S; Chen, H F; Chen, J H; Chen, L; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Chwastowski, J; Codrington, M J M; Contin, G; Cramer, J G; Crawford, H J; Cui, X; Das, S; Davila Leyva, A; De Silva, L C; Debbe, R R; Dedovich, T G; Deng, J; Derevschikov, A A; Derradi de Souza, R; Dhamija, S; di Ruzza, B; Didenko, L; Dilks, C; Ding, F; Djawotho, P; Dong, X; Drachenberg, J L; Draper, J E; Du, C M; Dunkelberger, L E; Dunlop, J C; Efimov, L G; Engelage, J; Engle, K S; Eppley, G; Eun, L; Evdokimov, O; Eyser, O; Fatemi, R; Fazio, S; Fedorisin, J; Filip, P; Finch, E; Fisyak, Y; Flores, C E; Gagliardi, C A; Gangadharan, D R; Garand, D; Geurts, F; Gibson, A; Girard, M; Gliske, S; Greiner, L; Grosnick, D; Gunarathne, D S; Guo, Y; Gupta, A; Gupta, S; Guryn, W; Haag, B; Hamed, A; Han, L-X; Haque, R; Harris, J W; Heppelmann, S; Hirsch, A; Hoffmann, G W; Hofman, D J; Horvat, S; Huang, B; Huang, H Z; Huang, X; Huck, P; Humanic, T J; Igo, G; Jacobs, W W; Jang, H; Judd, E G; Kabana, S; Kalinkin, D; Kang, K; Kauder, K; Ke, H W; Keane, D; Kechechyan, A; Kesich, A; Khan, Z H; Kikola, D P; Kisel, I; Kisiel, A; Koetke, D D; Kollegger, T; Konzer, J; Koralt, I; Kotchenda, L; Kraishan, A F; Kravtsov, P; Krueger, K; Kulakov, I; Kumar, L; Kycia, R A; Lamont, M A C; Landgraf, J M; Landry, K D; Lauret, J; Lebedev, A; Lednicky, R; Lee, J H; LeVine, M J; Li, C; Li, W; Li, X; Li, X; Li, Y; Li, Z M; Lisa, M A; Liu, F; Ljubicic, T; Llope, W J; Lomnitz, M; Longacre, R S; Luo, X; Ma, G L; Ma, Y G; Madagodagettige Don, D M M D; Mahapatra, D P; Majka, R; Margetis, S; Markert, C; Masui, H; Matis, H S; McDonald, D; McShane, T S; Minaev, N G; Mioduszewski, S; Mohanty, B; Mondal, M M; Morozov, D A; Mustafa, M K; Nandi, B K; Nasim, Md; Nayak, T K; Nelson, J M; Nigmatkulov, G; Nogach, L V; Noh, S Y; Novak, J; Nurushev, S B; Odyniec, G; Ogawa, A; Oh, K; Ohlson, A; Okorokov, V; Oldag, E W; Olvitt, D L; Pachr, M; Page, B S; Pal, S K; Pan, Y X; Pandit, Y; Panebratsev, Y; Pawlak, T; Pawlik, B; Pei, H; Perkins, C; Peryt, W; Pile, P; Planinic, M; Pluta, J; Poljak, N; Porter, J; Poskanzer, A M; Pruthi, N K; Przybycien, M; Pujahari, P R; Putschke, J; Qiu, H; Quintero, A; Ramachandran, S; Raniwala, R; Raniwala, S; Ray, R L; Riley, C K; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Ross, J F; Roy, A; Ruan, L; Rusnak, J; Rusnakova, O; Sahoo, N R; Sahu, P K; Sakrejda, I; Salur, S; Sandweiss, J; Sangaline, E; Sarkar, A; Schambach, J; Scharenberg, R P; Schmah, A M; Schmidke, W B; Schmitz, N; Seger, J; Seyboth, P; Shah, N; Shahaliev, E; Shanmuganathan, P V; Shao, M; Sharma, B; Shen, W Q; Shi, S S; Shou, Q Y; Sichtermann, E P; Singaraju, R N; Skoby, M J; Smirnov, D; Smirnov, N; Solanki, D; Sorensen, P; Spinka, H M; Srivastava, B; Stanislaus, T D S; Stevens, J R; Stock, R; Strikhanov, M; Stringfellow, B; Sumbera, M; Sun, X; Sun, X M; Sun, Y; Sun, Z; Surrow, B; Svirida, D N; Symons, T J M; Szelezniak, M A; Takahashi, J; Tang, A H; Tang, Z; Tarnowsky, T; Thomas, J H; Timmins, A R; Tlusty, D; Tokarev, M; Trentalange, S; Tribble, R E; Tribedy, P; Trzeciak, B A; Tsai, O D; Turnau, J; Ullrich, T; Underwood, D G; Van Buren, G; van Nieuwenhuizen, G; Vandenbroucke, M; Vanfossen, J A; Varma, R; Vasconcelos, G M S; Vasiliev, A N; Vertesi, R; Videbæk, F; Viyogi, Y P; Vokal, S; Vossen, A; Wada, M; Wang, F; Wang, G; Wang, H; Wang, J S; Wang, X L; Wang, Y; Wang, Y; Webb, G; Webb, J C; Westfall, G D; Wieman, H; Wissink, S W; Witt, R; Wu, Y F; Xiao, Z; Xie, W; Xin, K; Xu, H; Xu, J; Xu, N; Xu, Q H; Xu, Y; Xu, Z; Yan, W; Yang, C; Yang, Y; Yang, Y; Ye, Z; Yepes, P; Yi, L; Yip, K; Yoo, I-K; Yu, N; Zawisza, Y; Zbroszczyk, H; Zha, W; Zhang, J B; Zhang, J L; Zhang, S; Zhang, X P; Zhang, Y; Zhang, Z P; Zhao, F; Zhao, J; Zhong, C; Zhu, X; Zhu, Y H; Zoulkarneeva, Y; Zyzak, M

    2014-10-03

    We report the first measurement of charmed-hadron (D(0)) production via the hadronic decay channel (D(0) → K(-) + π(+)) in Au+Au collisions at sqrt[s(NN)] = 200 GeV with the STAR experiment. The charm production cross section per nucleon-nucleon collision at midrapidity scales with the number of binary collisions, N(bin), from p+p to central Au+Au collisions. The D(0) meson yields in central Au + Au collisions are strongly suppressed compared to those in p+p scaled by N(bin), for transverse momenta p(T) > 3 GeV/c, demonstrating significant energy loss of charm quarks in the hot and dense medium. An enhancement at intermediate p(T) is also observed. Model calculations including strong charm-medium interactions and coalescence hadronization describe our measurements.

  20. Observation of D0 Meson Nuclear Modifications in Au +Au Collisions at √sNN =200 GeV

    Science.gov (United States)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Alford, J.; Anson, C. D.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Averichev, G. S.; Banerjee, A.; Beavis, D. R.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Borowski, W.; Bouchet, J.; Brandin, A. V.; Brovko, S. G.; Bültmann, S.; Bunzarov, I.; Burton, T. P.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chaloupka, P.; Chang, Z.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, L.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Chwastowski, J.; Codrington, M. J. M.; Contin, G.; Cramer, J. G.; Crawford, H. J.; Cui, X.; Das, S.; Davila Leyva, A.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Derradi de Souza, R.; Dhamija, S.; di Ruzza, B.; Didenko, L.; Dilks, C.; Ding, F.; Djawotho, P.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Engelage, J.; Engle, K. S.; Eppley, G.; Eun, L.; Evdokimov, O.; Eyser, O.; Fatemi, R.; Fazio, S.; Fedorisin, J.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Gagliardi, C. A.; Gangadharan, D. R.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Gliske, S.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, A.; Gupta, S.; Guryn, W.; Haag, B.; Hamed, A.; Han, L.-X.; Haque, R.; Harris, J. W.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Hofman, D. J.; Horvat, S.; Huang, B.; Huang, H. Z.; Huang, X.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jang, H.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Kesich, A.; Khan, Z. H.; Kikola, D. P.; Kisel, I.; Kisiel, A.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Koralt, I.; Kotchenda, L.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kulakov, I.; Kumar, L.; Kycia, R. A.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; LeVine, M. J.; Li, C.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, Z. M.; Lisa, M. A.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Ma, G. L.; Ma, Y. G.; Madagodagettige Don, D. M. M. D.; Mahapatra, D. P.; Majka, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; McDonald, D.; McShane, T. S.; Minaev, N. G.; Mioduszewski, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nandi, B. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nigmatkulov, G.; Nogach, L. V.; Noh, S. Y.; Novak, J.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Ohlson, A.; Okorokov, V.; Oldag, E. W.; Olvitt, D. L.; Pachr, M.; Page, B. S.; Pal, S. K.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Pawlik, B.; Pei, H.; Perkins, C.; Peryt, W.; Pile, P.; Planinic, M.; Pluta, J.; Poljak, N.; Porter, J.; Poskanzer, A. M.; Pruthi, N. K.; Przybycien, M.; Pujahari, P. R.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Riley, C. K.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Ross, J. F.; Roy, A.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandweiss, J.; Sangaline, E.; Sarkar, A.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Seger, J.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, B.; Shen, W. Q.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Singaraju, R. N.; Skoby, M. J.; Smirnov, D.; Smirnov, N.; Solanki, D.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stevens, J. R.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Sumbera, M.; Sun, X.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Svirida, D. N.; Symons, T. J. M.; Szelezniak, M. A.; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarnowsky, T.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Trzeciak, B. A.; Tsai, O. D.; Turnau, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vandenbroucke, M.; Vanfossen, J. A.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Vertesi, R.; Videbæk, F.; Viyogi, Y. P.; Vokal, S.; Vossen, A.; Wada, M.; Wang, F.; Wang, G.; Wang, H.; Wang, J. S.; Wang, X. L.; Wang, Y.; Wang, Y.; Webb, G.; Webb, J. C.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y. F.; Xiao, Z.; Xie, W.; Xin, K.; Xu, H.; Xu, J.; Xu, N.; Xu, Q. H.; Xu, Y.; Xu, Z.; Yan, W.; Yang, C.; Yang, Y.; Yang, Y.; Ye, Z.; Yepes, P.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zawisza, Y.; Zbroszczyk, H.; Zha, W.; Zhang, J. B.; Zhang, J. L.; Zhang, S.; Zhang, X. P.; Zhang, Y.; Zhang, Z. P.; Zhao, F.; Zhao, J.; Zhong, C.; Zhu, X.; Zhu, Y. H.; Zoulkarneeva, Y.; Zyzak, M.; STAR Collaboration

    2014-10-01

    We report the first measurement of charmed-hadron (D0) production via the hadronic decay channel (D0→K-+π+) in Au +Au collisions at √sNN =200 GeV with the STAR experiment. The charm production cross section per nucleon-nucleon collision at midrapidity scales with the number of binary collisions, Nbin, from p +p to central Au +Au collisions. The D0 meson yields in central Au +Au collisions are strongly suppressed compared to those in p+p scaled by Nbin, for transverse momenta pT>3 GeV /c, demonstrating significant energy loss of charm quarks in the hot and dense medium. An enhancement at intermediate pT is also observed. Model calculations including strong charm-medium interactions and coalescence hadronization describe our measurements.

  1. New phases of D ge 2 current and diffeomorphism algebras in particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Tze, Chia-Hsiung.

    1990-09-01

    We survey some global results and open issues of current algebras and their canonical field theoretical realization in D {ge} 2 dimensional spacetime. We assess the status of the representation theory of their generalized Kac-Moody and diffeomorphism algebras. Particular emphasis is put on higher dimensional analogs of fermi-bose correspondence, complex analyticity and the phase entanglements of anyonic solitons with exotic spin and statistics. 101 refs.

  2. Elaboration du Ge mesoporeux et etude de ses proprietes physico-chimiques en vue d'applications photovoltaiques

    Science.gov (United States)

    Tutashkonko, Sergii

    Le sujet de cette these porte sur l'elaboration du nouveau nanomateriau par la gravure electrochimique bipolaire (BEE) --- le Ge mesoporeux et sur l'analyse de ses proprietes physico-chimiques en vue de son utilisation dans des applications photovoltaiques. La formation du Ge mesoporeux par gravure electrochimique a ete precedemment rapportee dans la litterature. Cependant, le verrou technologique important des procedes de fabrication existants consistait a obtenir des couches epaisses (superieure a 500 nm) du Ge mesoporeux a la morphologie parfaitement controlee. En effet, la caracterisation physico-chimique des couches minces est beaucoup plus compliquee et le nombre de leurs applications possibles est fortement limite. Nous avons developpe un modele electrochimique qui decrit les mecanismes principaux de formation des pores ce qui nous a permis de realiser des structures epaisses du Ge mesoporeux (jusqu'au 10 mum) ayant la porosite ajustable dans une large gamme de 15% a 60%. En plus, la formation des nanostructures poreuses aux morphologies variables et bien controlees est desormais devenue possible. Enfin, la maitrise de tous ces parametres a ouvert la voie extremement prometteuse vers la realisation des structures poreuses a multi-couches a base de Ge pour des nombreuses applications innovantes et multidisciplinaires grace a la flexibilite technologique actuelle atteinte. En particulier, dans le cadre de cette these, les couches du Ge mesoporeux ont ete optimisees dans le but de realiser le procede de transfert de couches minces d'une cellule solaire a triple jonctions via une couche sacrificielle en Ge poreux. Mots-cles : Germanium meso-poreux, Gravure electrochimique bipolaire, Electrochimie des semi-conducteurs, Report des couches minces, Cellule photovoltaique

  3. Fluxes of 10-2000 GeV hadrons in EAS produced by 1-100 PeV PCR according to Tien Shan data

    International Nuclear Information System (INIS)

    Nesterova, N.M.; Pavlyuchenko, V.P.; Chubenko, A.P.; Shchepetov, A.L.; Mukhamedshin, R.A.

    2005-01-01

    The experimental data on the hadrons spectra with the energy of 10-2000 GeV in the extensive air showers with the electrons number N e =3 x 10 5 -10 8 at the distances of 3-60 m from the axis are obtained at the Tien-Shan mountainous facility (690 g/cm 2 ) by means of the 18NM64 neutron monitor and ionization calorimeter. The obtained results are compared with the calculations by the MS0-model. The comparison shows that the singular hadrons experimental number significantly exceeds the calculational value. This may be brought by the change in the PCR character and its interaction with the air atoms nuclei by the energies above several PeV [ru

  4. Rescattering in the nucleus for π-d interactions at 15 GeV/c

    International Nuclear Information System (INIS)

    Porter, F.C.; Bingham, H.H.; Fretter, W.B.; Graves, W.R.; Yost, G.P.; Dunn, L.A.; Lubatti, H.J.; Moriyasu, K.

    1980-01-01

    We present the π - d charged multiplicity distributions at 15 GeV/c and examine the probability that the products of a π - n collision in a deuterium nucleus rescatter on the proton. Averaged over all topologies, this probability is 0.13 +- 0.02. The rescatter probability as a function of the number of charged particles produced in the π - n interaction exhibits an increase at high multiplicity

  5. Structure of the novel ternary hydrides Li4Tt2D (Tt=Si and Ge)

    International Nuclear Information System (INIS)

    Wu Hui; Rush, J.J.; Maryland Univ., College Park, MD; Hartman, M.R.; Oregon State Univ., Corvallis, OR; Udovic, T.J.; Zhou Wei; Pennsylvania Univ., Philadelphia, PA; Bowman, R.C. Jr.; Vajo, J.J.

    2007-01-01

    The crystal structures of newly discovered Li 4 Ge 2 D and Li 4 Si 2 D ternary phases were solved by direct methods using neutron powder diffraction data. Both structures can be described using a Cmmm orthorhombic cell with all hydrogen atoms occupying Li 6 -octahedral interstices. The overall crystal structure and the geometry of these interstices are compared with those of other related phases, and the stabilization of this novel class of ternary hydrides is discussed. (orig.)

  6. Chemical states and optical properties of thermally evaporated Ge-Te and Ge-Sb-Te amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Singh, D.; Shandhu, S. [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India)

    2012-07-15

    Thin amorphous films of Ge{sub 22}Sb{sub 22}Te{sub 56} and Ge{sub 50}Te{sub 50} have been prepared from their respective polycrystalline bulk on glass substrates by thermal evaporation technique. The amorphous nature of the films was checked with X-ray diffraction studies. Amorphous-to-crystalline transition of the films has been induced by thermal annealing and the structural phases have been identified by X-ray diffraction. The phase transformation temperature of the films was evaluated by temperature dependent sheet resistance measurement. The chemical structure of the amorphous films has been investigated using X-ray photoelectron spectroscopy and the role of Sb in phase change Ge{sub 22}Sb{sub 22}Te{sub 56} film is discussed. Survey and core level (Ge 3d, Te 3d, Te 4d, Sb 3p, Sb 3d, O 1s, C 1s) band spectra has been recorded and analyzed. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-vis-NIR spectroscopy. The optical band gap, refractive index and extinction coefficient are also presented for thermally evaporated amorphous thin films.

  7. Pressure effects in the giant magnetocaloric compounds Gd.sub.5./sub.(Si.sub.x./sub.Ge.sub.1 - x./sub.).sub.4./sub..

    Czech Academy of Sciences Publication Activity Database

    Morellon, L.; Arnold, Zdeněk; Algarabel, P. A.; Magen, C.; Ibarra, M. R.; Skorokhod, Yuriy

    2004-01-01

    Roč. 16, - (2004), s. 1623-1630 ISSN 0953-8984 R&D Projects: GA ČR GA106/02/0943 Grant - others:CICYT(ES) MAT2000-1756 Institutional research plan: CEZ:AV0Z1010914 Keywords : magnetocaloric effect * high pressure * Gd 5 Si 4-x Ge x * magnetic transitions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.049, year: 2004

  8. Cluster self-organization of germanate systems: suprapolyhedral precursor clusters and self-assembly of K2Nd4Ge4O13(OH)4, K2YbGe4O10(OH), K2Sc2Ge2O7(OH)2, and KScGe2O6(PYR)

    International Nuclear Information System (INIS)

    Ilyushin, G.D.; Dem'yanets, L.N.

    2008-01-01

    One performed the computerized (the TOPOS 4.0 software package) geometric and topological analyses of all known types of K, TR-germanates (TR = La-Lu, Y, Sc, In). The skeleton structure are shown as three-dimensional 3D, K, TR, Ge-patterns (graphs) with remote oxygen atoms. TR 4 3 3 4 3 3 + T 4 3 4 3, K 2 YbGe 4 O 14 (OH) pattern, TR 6 6 3 6 + T1 6 8 6 + T2 3 6 8, K 2 Sc 2 Ge 2 O 7 (OH) 2 , TR 6 4 6 4 + T 6 4 6 and KScGe 2 O 6 - TR 6 6 3 6 3 4 + T1 6 3 6 + T2 6 4 3 patterns served as crystal-forming 2D TR,Ge-patterns for K 2 Nd 4 Ge 4 O 13 (OH) 4 . One performed the 3D-simulation of the mechanism of self-arrangement of the crystalline structures: cluster-precursor - parent chain - microlayer - microskeleton (super-precursor). Within K 2 Nd 4 Ge 4 O 13 (OH) 4 , K 2 Sc 2 Ge 2 O 7 (OH) 2 and KScGe 2 O 6 one identified the invariant type of the cyclic hexapolyhedral cluster-precursor consisting of TR-octahedrons linked by diorthogroups stabilized by K atoms. For K 2 Nd 4 Ge 4 O 13 (OH) 4 one determined the type of the cyclic tetrapolyhedral cluster-precursor consisting of TR-octavertices linked by tetrahedrons. The cluster CN within the layer just for KScGe 2 O 6 water-free germanate (the PYR pyroxene analog) is equal to 6 (the maximum possible value), while in the rest OH-containing germanates it constitutes 4. One studied the formation mechanism of Ge-radicals in the form of Ge 2 O 7 and Ge 4 O 13 groupings, GeO 3 chain and the tubular structure consisting of Ge 8 O 20 fixed cyclic groupings [ru

  9. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0 νββ decay searches of 76Ge

    Science.gov (United States)

    Bhike, Megha; Fallin, B.; Krishichayan; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ∼ 86%76Ge and ∼ 14%74Ge used in the 0 νββ searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the 3H (p , n)3He, 2H (d , n)3He and 3H (d , n)4He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution γ-ray spectroscopy was used to determine the γ-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the 74Ge (n , γ)75Ge reaction, the present data are about a factor of two larger than predicted. It was found that the 74Ge (n , γ)75Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the 76Ge (n , γ)77Ge yield due to the larger cross section of the former reaction.

  10. Study of 4f hybridization in CeNiX with X=Sn{sub d}eltaGe{sub 1-d}elta, 0<=delta<=1

    Energy Technology Data Exchange (ETDEWEB)

    Fuente, C. de la, E-mail: cesar@unizar.e [Depto. Fisica de la Materia Condensada, Laboratorio de Magnetismo, Universidad de Zaragoza and ICMA-CSIC (Spain); Moral, A. del [Depto. Fisica de la Materia Condensada, Laboratorio de Magnetismo, Universidad de Zaragoza and ICMA-CSIC (Spain); Adroja, D.T. [ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire OX11 0QX (United Kingdom); Fraile, A. [Depto. Fisica de la Materia Condensada, Laboratorio de Magnetismo, Universidad de Zaragoza and ICMA-CSIC (Spain); Arnaudas, J.I. [Instituto de Nanociencia de Aragon, Universidad de Zaragoza (Spain)

    2010-05-15

    We report inelastic neutron scattering and core-level X-ray photoemission spectroscopy experiments for studying the Kondo problem in the CeNiX, X=Sn{sub d}eltaGe{sub 1-d}elta 0<=delta<=1 series. The neutron results confirm that they behave like a Kondo lattice for delta>=0.85, showing broad maxima at around 30 meV, typical of a crystal field magnetic scattering. So, the Ge doping could produce the suppression of the cerium magnetism observed for delta<=0.25. To open a more deep sight on this point, we have analyzed the 3d core-level XPS spectra by using the well-known Gunnarsson-Schoenhammer model. From this analysis, we have obtained the 'on-site' Coulomb bare repulsion for f states, U, and hybridization parameter, DELTA, related with the hopping from the f states to the conduction ones. These U values are very similar for all compounds, about 7 eV, but the hybridization parameter slightly changes from 0.2 to 0.16 eV on increasing the Sn concentration. In Sn-rich compounds, the 4f occupation is close to spin limit fluctuation, which allows us to obtain an estimation of the Kondo temperatures, approx1200 K, and the static 0 K susceptibility, approx1.1x10{sup -3} emu/mol. Finally, we have done 'ab-initio' calculations based on the LDA+U+SO which confirm the existence of a small electronic gap opening in the DOS of Ge-rich compounds for U values lower than 7 eV.

  11. Progress report 2000-2001; Rapport d'activite 2000-2001

    Energy Technology Data Exchange (ETDEWEB)

    Albrand, S; Carbonell, J; Chauvin, J; Compara, V; Crepe-Renaudin, S; Conto, J.M. de; Favro, C; Lleres, A; Merle, E; Quemener, G; Renault, C; Tur, C

    2001-07-01

    This document reports the activities of the ISN (nuclear sciences institute of Grenoble) for the 2 last years 2000, 2001. ISN's teams are involved in 3 research axis: elementary particles and hadrons, astro-particles and new systems for producing nuclear energy. In this document the activities have been classified into 18 topics: 1) the ATLAS experiment (detector for LHC), 2) the D0 experiment (electron identification and b-tagging), 3) the DELPHI experiment (R-parity violation), 4) the AMS experiment (embarked cosmic ray detector), 5) the cosmic microwave background (CMB), 6) the MUNU experiment (magnetic moment of antineutrinos), 7) the EUSO experiment (detection of the extreme energy cosmic rays), 8) 2 parity violation experiments (GO and SAMPLE), 9) the photo-production of mesons on proton (GRAAL), 10) a new isomeric state for Sb{sup 136}, 11) a new shape isomer for Kr{sup 72}, 12) new {mu}s isomers near Sn{sup 132}, 13) laser spectroscopy measurements for very neutron-rich tin isotopes, 14) hybrid demonstrator, 15) hadron-therapy (Etoile project), 16) positron emission tomography, 17) theories and models, and 18) technological work on accelerators and ion sources. (A.C.)

  12. Tensor analysing power T{sub 2}0 in inelastic (d, d`) X scattering at 0{sup 0} on {sup 1}H and {sup 12}C from 4.5 to 9.0 GeV/c

    Energy Technology Data Exchange (ETDEWEB)

    Azhgirej, L S; Chernykh, E V [Laboratory of High Energies, Joint Institute for Nuclear Research, Dubna (Russian Federation); Kobushkin, A P [Institute of Theoretical Physics, Ukrainian Academy of Sciences, Kiev (Ukraine); and others

    1998-12-01

    Tensor analysing power T{sub 20} for inelastic (d, d`) X reaction at deuteron momentum from 4.2 to 9 GeV/c is presented. It is observed that T{sub 20} taken as a function of the four-momentum transfer squared t demonstrates an approximate scaling; its absolute value is small at |t| <{approx_equal} (0.05 - 0.1) GeV{sup 2}/c{sup 2} and has a maximum at -t {approx_equal}0.3 GeV{sup 2}/c{sup 2}. No significant dependence on the type of the target was observed 10 refs., 4 figs., 4 tabs.

  13. Performance of computer-aided detection applied to full-field digital mammography in detection of breast cancers

    International Nuclear Information System (INIS)

    Sadaf, Arifa; Crystal, Pavel; Scaranelo, Anabel; Helbich, Thomas

    2011-01-01

    Objective: The aim of this retrospective study was to evaluate performance of computer-aided detection (CAD) with full-field digital mammography (FFDM) in detection of breast cancers. Materials and Methods: CAD was retrospectively applied to standard mammographic views of 127 cases with biopsy proven breast cancers detected with FFDM (Senographe 2000, GE Medical Systems). CAD sensitivity was assessed in total group of 127 cases and for subgroups based on breast density, mammographic lesion type, mammographic lesion size, histopathology and mode of presentation. Results: Overall CAD sensitivity was 91% (115 of 127 cases). There were no statistical differences (p > 0.1) in CAD detection of cancers in dense breasts 90% (53/59) versus non-dense breasts 91% (62/68). There was statistical difference (p 20 mm 97% (22/23). Conclusion: CAD applied to FFDM showed 100% sensitivity in identifying cancers manifesting as microcalcifications only and high sensitivity 86% (71/83) for other mammographic appearances of cancer. Sensitivity is influenced by lesion size. CAD in FFDM is an adjunct helping radiologist in early detection of breast cancers.

  14. Measurements of azimuthal anisotropy and charged-particle multiplicity in d + Au collisions at √{sNN}=200 , 62.4, 39, and 19.6 GeV

    Science.gov (United States)

    Aidala, C.; Akiba, Y.; Alfred, M.; Aoki, K.; Apadula, N.; Ayuso, C.; Babintsev, V.; Bagoly, A.; Barish, K. N.; Bathe, S.; Bazilevsky, A.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Blau, D. S.; Boer, M.; Bok, J. S.; Brooks, M. L.; Bryslawskyj, J.; Bumazhnov, V.; Butler, C.; Campbell, S.; Canoa Roman, V.; Chi, C. Y.; Chiu, M.; Connors, M.; Csanád, M.; Csörgő, T.; Danley, T. W.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Do, J. H.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Elder, T.; Enokizono, A.; Esumi, S.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukuda, Y.; Gal, C.; Gallus, P.; Garg, P.; Ge, H.; Goto, Y.; Grau, N.; Greene, S. V.; Gunji, T.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Han, S. Y.; Hasegawa, S.; Haseler, T. O. S.; He, X.; Hemmick, T. K.; Hill, K.; Hodges, A.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Imrek, J.; Inaba, M.; Isenhower, D.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Ji, Z.; Johnson, B. M.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kang, J. H.; Kapukchyan, D.; Karthas, S.; Kazantsev, A. V.; Khachatryan, V.; Khanzadeev, A.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, M.; Kim, M. H.; Kincses, D.; Kistenev, E.; Koblesky, T.; Kotov, D.; Kudo, S.; Kurita, K.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, S. H.; Leitch, M. J.; Leung, Y. H.; Lewis, N. A.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Lökös, S.; Lynch, D.; Majoros, T.; Makek, M.; Malaev, M.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGlinchey, D.; Metzger, W. J.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Murakami, T.; Murata, J.; Nagai, K.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakano, K.; Nattrass, C.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ozawa, K.; Pantuev, V.; Papavassiliou, V.; Park, J. S.; Park, S.; Pate, S. F.; Patel, M.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Perezlara, C. E.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pun, A.; Purschke, M. L.; Radzevich, P. V.; Read, K. F.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Rosati, M.; Rowan, Z.; Runchey, J.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Schaefer, B.; Schmoll, B. K.; Seidl, R.; Sen, A.; Seto, R.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Silva, C. L.; Silvermyr, D.; Skoby, M. J.; Slunečka, M.; Smith, K. L.; Soltz, R. A.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Syed, S.; Takeda, A.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tieulent, R.; Timilsina, A.; Tomášek, M.; Towell, C. L.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vazquez-Carson, S.; Velkovska, J.; Virius, M.; Vrba, V.; Wang, X. R.; Wang, Z.; Watanabe, Y.; Wong, C. P.; Xu, C.; Xu, Q.; Yamaguchi, Y. L.; Yanovich, A.; Yin, P.; Yoo, J. H.; Yoon, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zharko, S.; Zou, L.; Phenix Collaboration

    2017-12-01

    We present measurements of the elliptic flow (v2) as a function of transverse momentum (pT), pseudorapidity (η ), and centrality in d +Au collisions at √{sNN}=200 , 62.4, 39, and 19.6 GeV. The beam-energy scan of d +Au collisions provides a testing ground for the onset of flow signatures in small collision systems. We measure a nonzero v2 signal at all four collision energies, which, at midrapidity and low pT, is consistent with predictions from viscous hydrodynamic models. Comparisons with calculations from parton transport models (based on the ampt Monte Carlo generator) show good agreement with the data at midrapidity to forward (d -going) rapidities and low pT. At backward (Au-going) rapidities and pT>1.5 GeV /c , the data diverges from ampt calculations of v2 relative to the initial geometry, indicating the possible dominance of nongeometry related correlations, referred to as nonflow. We also present measurements of the charged-particle multiplicity (d Nch/d η ) as a function of η in central d +Au collisions at the same energies. We find that in d +Au collisions at √{sNN}=200 GeV the v2 scales with d Nch/d η over all η in the PHENIX acceptance. At √{sNN}=62.4 , and 39 GeV, v2 scales with d Nch/d η at midrapidity and forward rapidity, but falls off at backward rapidity. This departure from the d Nch/d η scaling may be a further indication of nonflow effects dominating at backward rapidity.

  15. Application of Auto CAD 2000

    International Nuclear Information System (INIS)

    Kim, Hyeong Jun

    1999-11-01

    This book deals with basic of AutoCAD, beginning AutoCAD 2000, using design center of AutoCAD 2000, adding drawing element with design center, drawing lines, using 2D edit command, making layer, hatching, dimensioning, entering letters on the floor plan, making 3D object, practice of 3D command, edition of 3D object, making solid, rendering object, and using internet in AutoCAD 2000. This book is introduction of AutoCAD 2000 for beginner.

  16. Rapport du congrès EUROCALL 2000 et du symposium InSTIL 2000 (Dundee, Ecosse

    Directory of Open Access Journals (Sweden)

    Pierre Machu

    2000-12-01

    Full Text Available Le congrès annuel de EUROCALL (2000 (European Association for Computer Assisted Language Learning s'est déroulé du 31 août au 2 septembre 2000 à l'Université d'Abertay-Dundee et avait pour thème : Innovations dans l'apprentissage des langues au troisième millénaire - Réseaux pour la formation continue, interdisciplinarité et réponse intelligente de la machine (voir le site EUROCALL 2000 (2000. Environ 230 délégués provenant de 30 pays se sont rassemblés à Dundee. Les séances plénières et les communications (présentation de recherches ou démonstrations s'articulaient par conséquent autour de sous-thèmes tels que recherche en acquisition d'une langue seconde et ALAO, exploitation ou conception de matériaux pour la toile, communication médiatisée par ordinateur, centres de langues et apprentissage des langues de spécialité, traitement du language naturel et technologie de la parole. La technologie de la parole était également au coeur des préoccupations et travaux des 80 participants au symposium d'InSTIL 2000 (2000 (Intégration des technologies de la parole dans l'apprentissage des langues qui s'est déroulé durant les deux jours précédant le congrès EUROCALL 2000. InSTIL 2000 était organisé par le groupe d'intérêts spéciaux (GIS InSTIL (2000, (Integrating Speech Technology in Language Learning issu des trois associations CALICO (2000 (Computer Assisted Language Instruction Consortium, EUROCALL (2000 et ISCA (2000 (International Speech Communication Association.

  17. P-barp and pp elastic scattering from 10 GeV to 1000 GeV centre-of-mass energy

    International Nuclear Information System (INIS)

    Islam, M.M.; Fearnley, T.; Guillaud, J.P.

    1984-01-01

    Antiproton-proton and proton-proton elastic scattering are studied simultaneously over the energy range √s approx. (10-1000) GeV in a nucleon valence core model proposed earlier. The scattering is described as primarily due to two processes: diffraction and hard scattering. The latter originates from the scattering of a nucleon core off another core. Destructive interference between the two processes produces dips in p-barp and pp differential cross-sections. As energy increases beyond the ISR range (√s = (23-62) GeV), the dips get filled up, and eventually transform into shoulders or breaks at collider energies. Differences between p-barp and pp differential cross-sections persist even at collider energies. Comparison with ISR data shows that the model provides a quantitative description of pp elastic scattering in this energy range. Predictions of p-barp and pp differential cross-sections at future collider energies √s = 800 and 2000 GeV are given. In order to distinguish between competing models, need for measuring the p-barp differential cross-section at the ISR and SPS collider in the abs (t)-range (0.5-2.0) (GeV) 2 is stressed

  18. anti pp and pp elastic scattering from 10 GeV to 1000 GeV centre-of-mass energy

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M.M. (Connecticut Univ., Storrs (USA). Dept. of Physics); Fearnley, T. (University Coll., London (UK). Dept. of Physics and Astronomy); Guillaud, J.P. (Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules)

    1984-06-21

    Antiproton-proton and proton-proton elastic scattering are studied simultaneously over the energy range ..sqrt..anti s approx.= (10/1000) GeV in a nucleon valence core model proposed earlier. The scattering is described as primarily due to two processes: diffraction and hard scattering. The latter originates from the scattering of a nucleon core off another core. Destructive interference between the two processes produces dips in anti pp and pp differential cross-sections. As energy increases beyond the ISR range (..sqrt..anti s = (23/62) GeV), the dips get filled up, and eventually transform into shoulders or breaks at collider energies. Differences between anti pp and pp differential cross-sections persist even at collider energies. Comparison with ISR data shows that the model provides a quantitative description of pp elastic scattering in this energy range. Predictions of anti pp and pp differential cross-sections at future collider energies ..sqrt..s = 800 and 2000 GeV are given. In order to distinguish between competing models, need for measuring the anti pp differential cross-section at the ISR and SPS collider in the vertical stroketvertical stroke-range (0.5/2.0) (GeV)/sup 2/ is stressed.

  19. P-barp and pp elastic scattering from 10 GeV to 1000 GeV centre-of-mass energy

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M.M. (Connecticut Univ., Storrs (USA). Dept. of Physics); Fearnley, T. (University Coll., London (UK). Dept. of Physics and Astronomy); Guillaud, J.P. (L.A.P.P. - BP909, 74019 Annecy-Le-Vieux Cedex, France)

    1984-06-21

    Antiproton-proton and proton-proton elastic scattering are studied simultaneously over the energy range ..sqrt..s approx. (10-1000) GeV in a nucleon valence core model proposed earlier. The scattering is described as primarily due to two processes: diffraction and hard scattering. The latter originates from the scattering of a nucleon core off another core. Destructive interference between the two processes produces dips in p-barp and pp differential cross-sections. As energy increases beyond the ISR range (..sqrt..s = (23-62) GeV), the dips get filled up, and eventually transform into shoulders or breaks at collider energies. Differences between p-barp and pp differential cross-sections persist even at collider energies. Comparison with ISR data shows that the model provides a quantitative description of pp elastic scattering in this energy range. Predictions of p-barp and pp differential cross-sections at future collider energies ..sqrt..s = 800 and 2000 GeV are given. In order to distinguish between competing models, need for measuring the p-barp differential cross-section at the ISR and SPS collider in the abs (t)-range (0.5-2.0) (GeV)/sup 2/ is stressed.

  20. Fluoride removal from double four-membered ring (D4R) units in As-synthesized Ge-containing zeolites

    KAUST Repository

    Liu, Xiaolong; Ravon, Ugo; Tuel, Alain

    2011-01-01

    Fluoride anions can be removed from the framework of as-prepared Ge-containing zeolites ITQ-13 and ITQ-17 without modification of the crystallinity and crystal habit. By contrast to all-silica ITQ-13 for which fluoride could not get out from D4R

  1. Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

    International Nuclear Information System (INIS)

    Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M.; Sun, X.; Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S.

    2011-01-01

    We investigated the molecular beam deposition of Al 2 O 3 on Ge 0.95 Sn 0.05 surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge 1-x Sn x and Ge/Ge 1-x Sn x surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al 2 O 3 high-κ gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge 1-x Sn x /Al 2 O 3 gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge 1-x Sn x layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D it ) in the range of 10 12 eV -1 cm -2 in mid gap and higher close to the valence band edge.

  2. Image quality of digital mammography images produced using wet and dry laser imaging systems

    International Nuclear Information System (INIS)

    Al Khalifah, K.; Brindhaban, A.; AlArfaj, R.; Jassim, O.

    2006-01-01

    Introduction: A study was carried out to compare the quality of digital mammographic images printed or processed by a wet laser imaging system and a dedicated mammographic dry laser imaging system. Material and methods: Digital images of a tissue equivalent breast phantom were obtained using a GE Senographe 2000D digital mammography system and different target/filter combinations of the X-ray tube. These images were printed on films using the Fuji FL-IM D wet laser imaging system and the Kodak DryView 8600 dry laser imaging system. The quality of images was assessed in terms of detectability of microcalcifications and simulated tumour masses by five radiologists. In addition, the contrast index and speed index of the two systems were measured using the step wedge in the phantom. The unpaired, unequal variance t-test was used to test any statistically significant differences. Results: There were no significant (p < 0.05) differences between the images printed using the two systems in terms of microcalcification and tumour mass detectability. The wet system resulted in slightly higher contrast index while the dry system showed significantly higher speed index. Conclusion: Both wet and dry laser imaging systems can produce mammography images of good quality on which 0.2 mm microcalcifications and 2 mm tumour masses can be detected. Dry systems are preferable due to the absence of wet chemical processing and solid or liquid chemical waste. The wet laser imaging systems, however, still represent a useful alternative to dry laser imaging systems for mammography studies

  3. Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

    Science.gov (United States)

    Baira, Mourad; Salem, Bassem; Madhar, Niyaz Ahamad; Ilahi, Bouraoui

    2018-05-01

    In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in D- and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in D-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions.

  4. Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Shklyaev, Alexander, E-mail: shklyaev@isp.nsc.ru [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Bolotov, Leonid; Poborchii, Vladimir; Tada, Tetsuya [National Institute of Advanced Industrial Science and Technology, Higashi 1-1-1, Tsukuba, Ibaraki 305-8562 (Japan)

    2015-05-28

    The formation of three-dimensional (3D) structures during Ge deposition on Si(111) at about 800 °C is studied with scanning tunneling, Kelvin probe and electron microscopies, and scanning tunneling and Raman spectroscopies. The observed surface morphology is formed by dewetting of Ge from Si(111), since it occurs mainly by means of minimization of surface and interfacial energies. The dewetting proceeds through massive Si eroding around growing 3D structures, providing them to be composed of SiGe with about a 30% Ge content, and leads to the significant reduction of the SiGe/Si interface area. It is found that the SiGe top component of 3D structures forms sharp interfaces with the underlying Si. The minimization of interfacial and strain energies occurs on the way that the 3D structures appear to get the dendrite-like shape. The Ge distribution in the 3D SiGe structures is inhomogeneous in the lateral dimension with a higher Ge concentration in their central areas and Ge segregation on their surface.

  5. Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures

    International Nuclear Information System (INIS)

    Shklyaev, Alexander; Bolotov, Leonid; Poborchii, Vladimir; Tada, Tetsuya

    2015-01-01

    The formation of three-dimensional (3D) structures during Ge deposition on Si(111) at about 800 °C is studied with scanning tunneling, Kelvin probe and electron microscopies, and scanning tunneling and Raman spectroscopies. The observed surface morphology is formed by dewetting of Ge from Si(111), since it occurs mainly by means of minimization of surface and interfacial energies. The dewetting proceeds through massive Si eroding around growing 3D structures, providing them to be composed of SiGe with about a 30% Ge content, and leads to the significant reduction of the SiGe/Si interface area. It is found that the SiGe top component of 3D structures forms sharp interfaces with the underlying Si. The minimization of interfacial and strain energies occurs on the way that the 3D structures appear to get the dendrite-like shape. The Ge distribution in the 3D SiGe structures is inhomogeneous in the lateral dimension with a higher Ge concentration in their central areas and Ge segregation on their surface

  6. Observations of the D, E and delta mesons in π-p interactions at 12 and 15 GeV/c

    International Nuclear Information System (INIS)

    Corden, M.J.; Dowell, J.D.; Garvey, J.

    1978-07-01

    The D(1285), E(1420) and delta(975) mesons produced in 12 and 15 GeV/c π - p interactions at the CERN Omega Spectrometer have been observed. Production cross sections and decay branching ratios are presented. Analysis of the decay D(1285) → delta(975) π favours a spin parity assignment of 1 + . (author)

  7. Interactions between superconductivity and quantum criticality in CeCoIn5, URhGe and UCoGe

    International Nuclear Information System (INIS)

    Howald, L.

    2011-01-01

    The subject of this thesis is the analyze of the superconducting upper critical field (Hc2) and the interaction between superconductivity and quantum critical points (QCP), for the compounds CeCoIn 5 , URhGe and UCoGe. In CeCoIn 5 , study by mean of resistivity of the Fermi liquid domain allows us to localize precisely the QCP at ambient pressure. This analyze rule out the previously suggested pinning of Hc2(0) at the QCP. In a second part, the evolution of Hc2 under pressure is analyzed. The superconducting dome is unconventional in this compound with two characteristic pressures: at 1.6 GPa, the superconducting transition temperature is maximum but it is at 0.4 GPa that physical properties (maximum of Hc2(0), maximum of the initial slope dHc2/dT, maximum of the specific heat jump DC/C,... ) suggest a QCP. We explain this antagonism with pair-breaking effects in the proximity of the QCP. With these two experiments, we suggest a new phase diagram for CeCoIn 5 . In a third part, measurements of thermal conductivity on URhGe and UCoGe are presented. We obtained the bulk superconducting phase transition and confirmed the unusual curvature of the slope dHc2/dT observed by resistivity. The temperatures and fields dependence of thermal conductivity allow us to identify a non-electronic contribution for heat transport down to the lowest temperature (50 mK) and probably associated with magnon or longitudinal fluctuations. We also identified two different domains in the superconducting region, These domains are compatible with a two bands model for superconductivity. Thermopower measurements on UCoGe reveal a strong anisotropy to current direction and several anomaly under field applied in the b direction. We suggest a Lifshitz transition to explain our observations in these two compounds. (author) [fr

  8. Study of Ge loss during Ge condensation process

    International Nuclear Information System (INIS)

    Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

    2014-01-01

    Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

  9. Studies of the chemical behavior of carrier-free 68Ge. Pt. 2

    International Nuclear Information System (INIS)

    Mirzadeh, S.; Kahn, M.

    1986-01-01

    A determination of the 68 Ge distribution constant from the distillation of the azeotropic HCl was made. A simple correlation between the distribution constants of the 68 Ge and HCl was observed which can be expressed as D'sub(Ge)=k[D'sub(HCl)]sup(n). (orig.)

  10. Progress report 2000-2001; Rapport d'activite 2000-2001

    Energy Technology Data Exchange (ETDEWEB)

    Albrand, S.; Carbonell, J.; Chauvin, J.; Compara, V.; Crepe-Renaudin, S.; Conto, J.M. de; Favro, C.; Lleres, A.; Merle, E.; Quemener, G.; Renault, C.; Tur, C

    2001-07-01

    This document reports the activities of the ISN (nuclear sciences institute of Grenoble) for the 2 last years 2000, 2001. ISN's teams are involved in 3 research axis: elementary particles and hadrons, astro-particles and new systems for producing nuclear energy. In this document the activities have been classified into 18 topics: 1) the ATLAS experiment (detector for LHC), 2) the D0 experiment (electron identification and b-tagging), 3) the DELPHI experiment (R-parity violation), 4) the AMS experiment (embarked cosmic ray detector), 5) the cosmic microwave background (CMB), 6) the MUNU experiment (magnetic moment of antineutrinos), 7) the EUSO experiment (detection of the extreme energy cosmic rays), 8) 2 parity violation experiments (GO and SAMPLE), 9) the photo-production of mesons on proton (GRAAL), 10) a new isomeric state for Sb{sup 136}, 11) a new shape isomer for Kr{sup 72}, 12) new {mu}s isomers near Sn{sup 132}, 13) laser spectroscopy measurements for very neutron-rich tin isotopes, 14) hybrid demonstrator, 15) hadron-therapy (Etoile project), 16) positron emission tomography, 17) theories and models, and 18) technological work on accelerators and ion sources. (A.C.)

  11. Observation of the D, E and delta mesons in π-p interactions at 12 and 15 GeV/c

    International Nuclear Information System (INIS)

    Corden, M.J.; Dowell, J.D.; Garvey, J.; Jobes, M.; Kenyon, I.R.; Mawson, J.; McMahon, T.J.; Corbett, I.F.; Esterling, R.J.; Lipman, N.H.; Litchfield, P.J.; Sumorok, K.C.T.O.; Bellamy, E.H.; Green, M.G.; Harnew, N.; Lister, J.B.; Lister, J.R.; Robertson, A.W.; Stacey, B.J.; Strong, J.A.; Thomas, D.H.

    1978-01-01

    The authors have observed the D(1285), E(1420) and delta(975) mesons produced in 12 and 15 GeV/c π - p interactions at the CERN Omega Spectrometer. Production cross sections and decay branching ratios are presented. Analysis of the decay D(1285)→delta(975)π favours a spin-parity assignment of 1 + . (Auth.)

  12. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  13. Inspector-2000. A DSP-based, portable, multi-purpose MCA

    International Nuclear Information System (INIS)

    Koskelo, M.J.; Sielaff, W.A.; Hall, D.L.; Kastner, M.H.; Jordanov, V.T.

    2001-01-01

    Various in-situ gamma-spectroscopy applications need a versatile, multi-purpose, portable multi-channel analyzer (MCA). Recently, Canberra has introduced the Inspector-2000 for this purpose. It uses digital signal processing (DSP) technology and weighs only about 1.2 kg. It also supports CdTe, NaI and Ge detectors. Due to its use of DSP technology, the Inspector-2000 also provides a longer battery life, a better detector resolution and a better temperature stability than most portable MCAs. A short description of the Inspector-2000 MCA is included and its performance characteristics compared to an analog MCA. (author)

  14. Catalyst engineering for lithium ion batteries: the catalytic role of Ge in enhancing the electrochemical performance of SnO2(GeO2)0.13/G anodes.

    Science.gov (United States)

    Zhu, Yun Guang; Wang, Ye; Han, Zhao Jun; Shi, Yumeng; Wong, Jen It; Huang, Zhi Xiang; Ostrikov, Kostya Ken; Yang, Hui Ying

    2014-12-21

    The catalytic role of germanium (Ge) was investigated to improve the electrochemical performance of tin dioxide grown on graphene (SnO(2)/G) nanocomposites as an anode material of lithium ion batteries (LIBs). Germanium dioxide (GeO(20) and SnO(2) nanoparticles (GeO(2))0.13/G nanocomposites can deliver a capacity of 1200 mA h g(-1) at a current density of 100 mA g(-1), which is much higher than the traditional theoretical specific capacity of such nanocomposites (∼ 702 mA h g(-1)). More importantly, the SnO(2)(GeO(2))0.13/G nanocomposites exhibited an improved rate, large current capability (885 mA h g(-1) at a discharge current of 2000 mA g(-1)) and excellent long cycling stability (almost 100% retention after 600 cycles). The enhanced electrochemical performance was attributed to the catalytic effect of Ge, which enabled the reversible reaction of metals (Sn and Ge) to metals oxide (SnO(2) and GeO(2)) during the charge/discharge processes. Our demonstrated approach towards nanocomposite catalyst engineering opens new avenues for next-generation high-performance rechargeable Li-ion batteries anode materials.

  15. Inclusive D*(+/-) production in two photon collisions at LEP

    CERN Document Server

    Prokofiev, Denis Olegovich

    2001-01-01

    In this thesis I present my results on the measurement of the open charm production in two-photon collision events done with the L3 detector at Large Electron Positron machine (LEP). The data sample was collected from 1997 through 2000 at center-of-mass energies ranging from 183 GeV to 209 GeV, corresponding to a total integrated luminosity of 683.4pb −1. The open charm production in two-photon collision events extrapolated to the full phase space is estimated to be: s&parl0;e+e-&rarrr;e +e-cc&d1;X&parr0;=9 23±69±109±222pb. The differential cross sections d s /dpT(D*±) and d s /d:η(D*±): are also measured as functions of transverse momentum pT(D*±) and the absolute value of pseudorapidity :η(D*±):, respectively. A fit to the data estimating the relative contributions of Direct and Resolved open charm production mechanisms is performed, giving (28.7 ± 5.6)% and (71.3 ± 8.8)%, respectively. Using those relative fractions, the Direct and Resolved process cross sections yield: s&p...

  16. Measurement of D-meson azimuthal anisotropy in Au + Au 200 GeV collisions at RHIC

    Science.gov (United States)

    Lomnitz, Michael

    2016-12-01

    Heavy quarks are produced through initial hard scatterings and they are affected by the hot and dense medium created in heavy-ion collisions throughout its whole evolution. Due to their heavy mass, charm quarks are expected to thermalize much more slowly than light flavor quarks. The charm quark flow is a unique tool to study the extent of thermalization of the bulk medium dominated by light quarks and gluons. At high pT, D-meson azimuthal anisotropy is sensitive to the path length dependence of charm quark energy loss in the medium, which offers new insights into heavy quark energy loss mechanisms - gluon radiation vs. collisional processes. We present the STAR measurement of elliptic flow (v2) of D0 and D± mesons in Au+Au collisions at √{sNN} = 200 GeV, for a wide transverse momentum range. These results are obtained from the data taken in the first year of physics running of the new STAR Heavy Flavor Tracker detector, which greatly improves open heavy flavor hadron measurements by the topological reconstruction of secondary decay vertices. The D-meson v2 is finite for pT > 2 GeV/c and systematically below the measurement of light particle species at the same energy. Comparison to a series of model calculations favors scenarios where charm flows with the medium and is used to infer a range for the charm diffusion coefficient 2 πTDs.

  17. Analysis of p-bar p scattering at 31 GeV and 62 GeV by the Chou-Yang model

    International Nuclear Information System (INIS)

    Padua, A.B. de; Covolan, R.J.M.; Souza Paes, J.T. de

    1988-01-01

    The p-bar p scattering is analysed at 31 GeV and 62 GeV energies for momentum transfers in the range O 2 . The experimental (dσ/dt)p-bar p values were fitted using a pure imaginary written as a sum of exponentials, that is, a(s,t)=a(s,O) σ n i=l α i e βit . Using the parameters obtained we have calculated the absorption constant K p-bar p the form factor and the mean square radius of the p-bar matter distribuition by the Chou-Yang model. These calculations reveal a ''dip'' around -t approx.= 1.3 (GeV/c) 2 at 31 GeV and 62 GeV. (author) [pt

  18. ' D. P. ERASMUS. 7echn:e& en Geíoo^, deur DR. PAUL ToURNïER ...

    African Journals Online (AJOL)

    Test

    D. P. ERASMUS. 7echn:e& en Geíoo^, deur DR. PAUL ToURNïER (Uitgeverij W . ten Have. N.V., Amsterdam, 1950). Die titel van hierdie boek is in 'n mate misleidend: ons spraak gebruik het ons daaraan gewoond gemaak om onder tegniek óf in die algemeen „wyse van doen " óf in die besonder masjinale tegniek te ver.

  19. 125 GeV Higgs boson mass from 5D gauge-Higgs unification

    Science.gov (United States)

    Carson, Jason; Okada, Nobuchika

    2018-03-01

    In the context of a simple gauge-Higgs unification (GHU) scenario based on the gauge group SU(3)×U(1)^' in a 5D flat space-time, we investigate the possibility of reproducing the observed Higgs boson mass of around 125 GeV. We introduce bulk fermion multiplets with a bulk mass and a (half-)periodic boundary condition. In our analysis, we adopt a low-energy effective theoretical approach of the GHU scenario, where the running Higgs quartic coupling is required to vanish at the compactification scale. Under this "gauge-Higgs condition," we investigate the renormalization group evolution of the Higgs quartic coupling and find a relation between the bulk mass and the compactification scale so as to reproduce the 125 GeV Higgs boson mass. Through quantum corrections at the one-loop level, the bulk fermions contribute to the Higgs boson production and decay processes and deviate the Higgs boson signal strengths at the Large Hadron Collider experiments from the Standard Model (SM) predictions. Employing the current experimental data that show that the Higgs boson signal strengths for a variety of Higgs decay modes are consistent with the SM predictions, we obtain lower mass bounds on the lightest mode of the bulk fermions to be around 1 TeV.

  20. Measurement of D0 Azimuthal Anisotropy at Midrapidity in Au +Au Collisions at √{sN N }=200 GeV

    Science.gov (United States)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Ajitanand, N. N.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bai, X.; Bairathi, V.; Behera, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chankova-Bunzarova, N.; Chatterjee, A.; Chattopadhyay, S.; Chen, X.; Chen, J. H.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Federicova, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, A.; Gupta, S.; Guryn, W.; Hamad, A. I.; Hamed, A.; Harlenderova, A.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Horvat, S.; Huang, T.; Huang, B.; Huang, X.; Huang, H. Z.; Humanic, T. J.; Huo, P.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kisel, I.; Kisiel, A.; Kochenda, L.; Kocmanek, M.; Kollegger, T.; Kosarzewski, L. K.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kulathunga, N.; Kumar, L.; Kvapil, J.; Kwasizur, J. H.; Lacey, R.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, X.; Li, C.; Li, W.; Li, Y.; Lidrych, J.; Lin, T.; Lisa, M. A.; Liu, H.; Liu, P.; Liu, Y.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, S.; Luo, X.; Ma, G. L.; Ma, L.; Ma, Y. G.; Ma, R.; Magdy, N.; Majka, R.; Mallick, D.; Margetis, S.; Markert, C.; Matis, H. S.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mizuno, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nie, M.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pile, P.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Poskanzer, A. M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Salur, S.; Sandweiss, J.; Saur, M.; Schambach, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Schweid, B. R.; Seger, J.; Sergeeva, M.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, A.; Sharma, M. K.; Shen, W. Q.; Shi, Z.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Strikhanov, M.; Stringfellow, B.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, Y.; Sun, X. M.; Sun, X.; Surrow, B.; Svirida, D. N.; Szelezniak, M. A.; Tang, A. H.; Tang, Z.; Taranenko, A.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, G.; Wang, Y.; Wang, F.; Wang, Y.; Webb, J. C.; Webb, G.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, W.; Xie, G.; Xu, J.; Xu, N.; Xu, Q. H.; Xu, Y. F.; Xu, Z.; Yang, Y.; Yang, Q.; Yang, C.; Yang, S.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, Z.; Zhang, X. P.; Zhang, J. B.; Zhang, S.; Zhang, J.; Zhang, Y.; Zhang, J.; Zhang, S.; Zhao, J.; Zhong, C.; Zhou, L.; Zhou, C.; Zhu, X.; Zhu, Z.; Zyzak, M.; STAR Collaboration

    2017-05-01

    We report the first measurement of the elliptic anisotropy (v2) of the charm meson D0 at midrapidity (|y |<1 ) in Au +Au collisions at √{sN N}=200 GeV . The measurement was conducted by the STAR experiment at RHIC utilizing a new high-resolution silicon tracker. The measured D0 v2 in 0%-80% centrality Au +Au collisions can be described by a viscous hydrodynamic calculation for a transverse momentum (pT) of less than 4 GeV /c . The D0 v2 as a function of transverse kinetic energy (mT-m0, where mT=√{pT2+m02 }) is consistent with that of light mesons in 10%-40% centrality Au +Au collisions. These results suggest that charm quarks have achieved local thermal equilibrium with the medium created in such collisions. Several theoretical models, with the temperature-dependent, dimensionless charm spatial diffusion coefficient (2 π T Ds) in the range of ˜2 - 12 , are able to simultaneously reproduce our D0 v2 result and our previously published results for the D0 nuclear modification factor.

  1. Structural and electrical evaluation for strained Si/SiGe on insulator

    International Nuclear Information System (INIS)

    Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

    2006-01-01

    Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

  2. Observation of the D, E and delta mesons in pi /sup -/p interactions at 12 and 15 GeV/c

    CERN Document Server

    Corden, M J; Bellamy, E H; Corbett, I F; Dagan, S; Dowell, John D; Esterling, R J; Garvey, J; Gnat, Y; Green, M G; Harnew, N; Jobes, M; Kenyon, I R; Lipman, Norman H; Lister, J B; Lister, J R; Litchfield, P J; Mawson, J; McMahon, T J; Robertson, A W; Stacey, B J; Strong, J A; Sumorok, K; Thomas, D H

    1978-01-01

    The authors have observed the D(1285), E(1420) and delta (975) mesons produced in 12 and 15 GeV/c pi /sup -/p interactions at the CERN Omega Spectrometer. Production cross sections and decay branching ratios are presented. Analysis of the decay D(1285) to delta (975) pi favours a spin parity assignment of 1/sup +/. (24 refs).

  3. Search for D0 mesons produced in association with muons in π-Be interactions at 55 GeV/c

    International Nuclear Information System (INIS)

    Antipov, Yu.M.; Bessubov, V.A.; Budanov, N.P.

    1978-01-01

    The reaction π - Be→Ksub(π+μ)+X has been studied with the wide aperture ''Sigma'' spectrometer. The multicell Cerenkov counter was used to separate pions and kaons in the momentum range 7-21 GeV/c. No statistically significant narrow peak was observed in Ksub(π) mass spectra in the range of D-meson mass. The upper limits of D-meson production cross-section is reported

  4. Preparation and investigation of Ge-S-I glasses for infrared fiber optics

    Science.gov (United States)

    Velmuzhov, A. P.; Sukhanov, M. V.; Plekhovich, A. D.; Snopatin, G. E.; Churbanov, M. F.; Iskhakova, L. D.; Ermakov, R. P.; Kotereva, T. V.; Shiryaev, V. S.

    2016-02-01

    Glass samples of [GeSx]90I10 (x = 1.5, 1.7, 2.0, 2.3, 2.45, 2.6) compositions were prepared, and some their thermal, optical properties as well as tendency to crystallization were investigated. The compositional dependences of glass transition temperature, volume fraction of crystallized phase and activation energy of glass formation (Eg) have nonmonotonic character with a maximum for [GeS2.0]90I10 glass. Glasses of 85.8GeS2-14.2GeI4 and [GeS1.5]90I10 compositions are identified as promising for preparation of optical fiber. For the first time, Ge-S-I glass fibers were produced. Minimum optical losses in 85.8GeS2-14.2GeI4 glass fiber were 2.7 dB/m at a wavelength of 5.1 μm, and that in [GeS1.5]90I10 glass fiber were 14.5 dB/m at 5.5 μm.

  5. Annual report 2000; Rapport annuel 2000

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-07-01

    This report presents the activities of the Cogema group, its reports on management and its financial situation for the year 2000: presentation of TOPCO, boards of directors, profile, main consolidated data, year 2000 highlights, group activities (mining-chemistry, enrichment, reprocessing-recycling, engineering, services, sustainable development, health and safety, quality policy, human resources, R and D, communication), organization chart of the consolidated Cogema group, financial statements, directory. (J.S.)

  6. Centrality dependence of charged antiparticle to particle ratios near midrapidity in d+Au collisions at √(sNN )=200 GeV

    Science.gov (United States)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.

    2004-07-01

    The ratios of the yields of charged antiparticles to particles have been obtained for pions, kaons, and protons near midrapidity for d+Au collisions at √(sNN )=200 GeV as a function of centrality. The reported values represent the ratio of the yields averaged over the rapidity range of 0.1< yπ <1.3 and 0< yK,p <0.8 , where positive rapidity is in the deuteron direction, and for transverse momenta 0.1< pπ,K T <1 GeV/c and 0.3< ppT <1 GeV/c . Within the uncertainties, a lack of centrality dependence is observed in all three ratios. The data are compared to results from other systems and model calculations.

  7. Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface

    International Nuclear Information System (INIS)

    Stesmans, A.; Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-01-01

    The hydrogen interaction kinetics of the GeP b1 defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ∼7 × 10 12  cm −2 at the SiGe/SiO 2 interfaces of condensation grown (100)Si/a-SiO 2 /Ge 0.75 Si 0.25 /a-SiO 2 structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP b1 -H formation) in molecular hydrogen (∼1 atm) and reactivation (GeP b1 -H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP b1  + H 2  → GeP b1 H + H and GeP b1 H → GeP b1  + H, which are found to be characterized by the average activation energies E f  = 1.44 ± 0.04 eV and E d  = 2.23 ± 0.04 eV, and attendant, assumedly Gaussian, spreads σE f  = 0.20 ± 0.02 eV and σE d  = 0.15 ± 0.02 eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t a  ∼ 35 min, it is found that even for the optimum treatment temperature ∼380 °C, only ∼60% of the GeP b1 system can be electrically silenced, still far remote from device grade level. This

  8. Study of K* meson production in PHENIX for d + Au and Cu + Cu systems at √sNN = 200 GeV at RHIC

    International Nuclear Information System (INIS)

    Sett, P.; Mishra, D.K.; Shukla, P.; Choudhury, R.K.

    2011-01-01

    Quantum Chromodynamics (QCD) predicts a phase transition from nuclear matter to quark gluon plasma (QGP) at energy density higher than >1 GeV/fm 3 achievable in high energy heavy ion collisions. Measurements of various mesons and baryons provide the information about the interaction dynamics in heavy ion collision. Lighter systems such as p+p are used as baseline for production mechanism and d+Au for the cold nuclear matter effects such as shadowing and Cronin effect. The K* transverse momentum spectra for d+Au system for different centralities has been measured in the pT range of 0.9 GeV/c within the uncertainties

  9. Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems

    Science.gov (United States)

    Lozovoy, Kirill A.; Kokhanenko, Andrey P.; Voitsekhovskii, Alexander V.

    2018-03-01

    Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applications in nanoelectronics and optoelectronics due to possibility of band gap management and synthesis of direct band semiconductors within these systems. However, there is a lack of theoretical investigations devoted to the peculiarities of germanium on silicon growth in the presence of tin. In this paper a new theoretical approach for modeling growth processes of binary and ternary semiconductor compounds during the molecular beam epitaxy in these systems is presented. The established kinetic model based on the general nucleation theory takes into account the change in physical and mechanical parameters, diffusion coefficient and surface energies in the presence of tin. With the help of the developed model the experimentally observed significant decrease in the 2D-3D transition temperatures for GeSiSn/Si system compared to GeSi/Si system is theoretically explained for the first time in the literature. Besides that, the derived expressions allow one to explain the experimentally observed temperature dependencies of the critical thickness, as well as to predict the average size and surface density of quantum dots for different contents and temperatures in growth experiment, that confirms applicability of the model proposed. Moreover, the established model can be easily applied to other material systems in which the Stranski-Krastanow growth mode occurs.

  10. Measurement of D^{0} Azimuthal Anisotropy at Midrapidity in Au+Au Collisions at sqrt[s_{NN}]=200  GeV.

    Science.gov (United States)

    Adamczyk, L; Adkins, J K; Agakishiev, G; Aggarwal, M M; Ahammed, Z; Ajitanand, N N; Alekseev, I; Anderson, D M; Aoyama, R; Aparin, A; Arkhipkin, D; Aschenauer, E C; Ashraf, M U; Attri, A; Averichev, G S; Bai, X; Bairathi, V; Behera, A; Bellwied, R; Bhasin, A; Bhati, A K; Bhattarai, P; Bielcik, J; Bielcikova, J; Bland, L C; Bordyuzhin, I G; Bouchet, J; Brandenburg, J D; Brandin, A V; Brown, D; Bunzarov, I; Butterworth, J; Caines, H; Calderón de la Barca Sánchez, M; Campbell, J M; Cebra, D; Chakaberia, I; Chaloupka, P; Chang, Z; Chankova-Bunzarova, N; Chatterjee, A; Chattopadhyay, S; Chen, X; Chen, J H; Chen, X; Cheng, J; Cherney, M; Christie, W; Contin, G; Crawford, H J; Das, S; De Silva, L C; Debbe, R R; Dedovich, T G; Deng, J; Derevschikov, A A; Didenko, L; Dilks, C; Dong, X; Drachenberg, J L; Draper, J E; Dunkelberger, L E; Dunlop, J C; Efimov, L G; Elsey, N; Engelage, J; Eppley, G; Esha, R; Esumi, S; Evdokimov, O; Ewigleben, J; Eyser, O; Fatemi, R; Fazio, S; Federic, P; Federicova, P; Fedorisin, J; Feng, Z; Filip, P; Finch, E; Fisyak, Y; Flores, C E; Fulek, L; Gagliardi, C A; Garand, D; Geurts, F; Gibson, A; Girard, M; Greiner, L; Grosnick, D; Gunarathne, D S; Guo, Y; Gupta, A; Gupta, S; Guryn, W; Hamad, A I; Hamed, A; Harlenderova, A; Harris, J W; He, L; Heppelmann, S; Heppelmann, S; Hirsch, A; Hoffmann, G W; Horvat, S; Huang, T; Huang, B; Huang, X; Huang, H Z; Humanic, T J; Huo, P; Igo, G; Jacobs, W W; Jentsch, A; Jia, J; Jiang, K; Jowzaee, S; Judd, E G; Kabana, S; Kalinkin, D; Kang, K; Kauder, K; Ke, H W; Keane, D; Kechechyan, A; Khan, Z; Kikoła, D P; Kisel, I; Kisiel, A; Kochenda, L; Kocmanek, M; Kollegger, T; Kosarzewski, L K; Kraishan, A F; Kravtsov, P; Krueger, K; Kulathunga, N; Kumar, L; Kvapil, J; Kwasizur, J H; Lacey, R; Landgraf, J M; Landry, K D; Lauret, J; Lebedev, A; Lednicky, R; Lee, J H; Li, X; Li, C; Li, W; Li, Y; Lidrych, J; Lin, T; Lisa, M A; Liu, H; Liu, P; Liu, Y; Liu, F; Ljubicic, T; Llope, W J; Lomnitz, M; Longacre, R S; Luo, S; Luo, X; Ma, G L; Ma, L; Ma, Y G; Ma, R; Magdy, N; Majka, R; Mallick, D; Margetis, S; Markert, C; Matis, H S; Meehan, K; Mei, J C; Miller, Z W; Minaev, N G; Mioduszewski, S; Mishra, D; Mizuno, S; Mohanty, B; Mondal, M M; Morozov, D A; Mustafa, M K; Nasim, Md; Nayak, T K; Nelson, J M; Nie, M; Nigmatkulov, G; Niida, T; Nogach, L V; Nonaka, T; Nurushev, S B; Odyniec, G; Ogawa, A; Oh, K; Okorokov, V A; Olvitt, D; Page, B S; Pak, R; Pandit, Y; Panebratsev, Y; Pawlik, B; Pei, H; Perkins, C; Pile, P; Pluta, J; Poniatowska, K; Porter, J; Posik, M; Poskanzer, A M; Pruthi, N K; Przybycien, M; Putschke, J; Qiu, H; Quintero, A; Ramachandran, S; Ray, R L; Reed, R; Rehbein, M J; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Roth, J D; Ruan, L; Rusnak, J; Rusnakova, O; Sahoo, N R; Sahu, P K; Salur, S; Sandweiss, J; Saur, M; Schambach, J; Schmah, A M; Schmidke, W B; Schmitz, N; Schweid, B R; Seger, J; Sergeeva, M; Seyboth, P; Shah, N; Shahaliev, E; Shanmuganathan, P V; Shao, M; Sharma, A; Sharma, M K; Shen, W Q; Shi, Z; Shi, S S; Shou, Q Y; Sichtermann, E P; Sikora, R; Simko, M; Singha, S; Skoby, M J; Smirnov, N; Smirnov, D; Solyst, W; Song, L; Sorensen, P; Spinka, H M; Srivastava, B; Stanislaus, T D S; Strikhanov, M; Stringfellow, B; Sugiura, T; Sumbera, M; Summa, B; Sun, Y; Sun, X M; Sun, X; Surrow, B; Svirida, D N; Szelezniak, M A; Tang, A H; Tang, Z; Taranenko, A; Tarnowsky, T; Tawfik, A; Thäder, J; Thomas, J H; Timmins, A R; Tlusty, D; Todoroki, T; Tokarev, M; Trentalange, S; Tribble, R E; Tribedy, P; Tripathy, S K; Trzeciak, B A; Tsai, O D; Ullrich, T; Underwood, D G; Upsal, I; Van Buren, G; van Nieuwenhuizen, G; Vasiliev, A N; Videbæk, F; Vokal, S; Voloshin, S A; Vossen, A; Wang, G; Wang, Y; Wang, F; Wang, Y; Webb, J C; Webb, G; Wen, L; Westfall, G D; Wieman, H; Wissink, S W; Witt, R; Wu, Y; Xiao, Z G; Xie, W; Xie, G; Xu, J; Xu, N; Xu, Q H; Xu, Y F; Xu, Z; Yang, Y; Yang, Q; Yang, C; Yang, S; Ye, Z; Ye, Z; Yi, L; Yip, K; Yoo, I-K; Yu, N; Zbroszczyk, H; Zha, W; Zhang, Z; Zhang, X P; Zhang, J B; Zhang, S; Zhang, J; Zhang, Y; Zhang, J; Zhang, S; Zhao, J; Zhong, C; Zhou, L; Zhou, C; Zhu, X; Zhu, Z; Zyzak, M

    2017-05-26

    We report the first measurement of the elliptic anisotropy (v_{2}) of the charm meson D^{0} at midrapidity (|y|<1) in Au+Au collisions at sqrt[s_{NN}]=200  GeV. The measurement was conducted by the STAR experiment at RHIC utilizing a new high-resolution silicon tracker. The measured D^{0} v_{2} in 0%-80% centrality Au+Au collisions can be described by a viscous hydrodynamic calculation for a transverse momentum (p_{T}) of less than 4  GeV/c. The D^{0} v_{2} as a function of transverse kinetic energy (m_{T}-m_{0}, where m_{T}=sqrt[p_{T}^{2}+m_{0}^{2}]) is consistent with that of light mesons in 10%-40% centrality Au+Au collisions. These results suggest that charm quarks have achieved local thermal equilibrium with the medium created in such collisions. Several theoretical models, with the temperature-dependent, dimensionless charm spatial diffusion coefficient (2πTD_{s}) in the range of ∼2-12, are able to simultaneously reproduce our D^{0} v_{2} result and our previously published results for the D^{0} nuclear modification factor.

  11. Electric field effect in multilayer Cr2Ge2Te6: a ferromagnetic 2D material

    Science.gov (United States)

    Xing, Wenyu; Chen, Yangyang; Odenthal, Patrick M.; Zhang, Xiao; Yuan, Wei; Su, Tang; Song, Qi; Wang, Tianyu; Zhong, Jiangnan; Jia, Shuang; Xie, X. C.; Li, Yan; Han, Wei

    2017-06-01

    The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nano-electronic devices. Since the first isolation of graphene, a Dirac material, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D transition metal dichalcogenides and black phosphorus, and superconducting 2D bismuth strontium calcium copper oxide, molybdenum disulphide and niobium selenide, etc. Here, we report the identification of ferromagnetic thin flakes of Cr2Ge2Te6 (CGT) with thickness down to a few nanometers, which provides a very important piece to the van der Waals structures consisting of various 2D materials. We further demonstrate the giant modulation of the channel resistance of 2D CGT devices via electric field effect. Our results illustrate the gate voltage tunability of 2D CGT and the potential of CGT, a ferromagnetic 2D material, as a new functional quantum material for applications in future nanoelectronics and spintronics.

  12. Study of hyperon-antihyperon production in antiproton-proton collision at 4 GeV/c; Etude de la production d'hyperon et d'antihyperon dans les collisions antiproton-proton a 4 GeV/c

    Energy Technology Data Exchange (ETDEWEB)

    Revel, D [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1965-05-15

    We present the results on hyperon-antihyperon production by 4 GeV/c antiprotons in hydrogen. We used about 10{sup 5} pictures taken in an antiproton beam from the CERN proton synchrotron with the 81 cm Saclay hydrogen bubble chamber. The aim of this work was the study, through the cross sections and the angular distributions, of production mechanism of hyperon antihyperon pairs and excited hyperons (or antihyperons). For most of the channels, these angular distributions show a strong forward peaking of the antihyperon in the center of mass of the interaction. This suggests that a peripheral-type mechanism is predominant in these processes. We compare the results of some cross sections, with theoretical predictions according to SU{sub 3} unitary symmetry. (author) [French] Nous presentons ici des resultats concernant la production d'hyperons et d'antihyperons dans l'interaction antiproton sur proton a 4 GeV/c. Nous avons utilise pour cette experience un lot de 10{sup 5} photographies, prises avec la chambre a bulles de 81 cm a hydrogene liquide de Saclay, placee dans un faisceau d'antiprotons aupres du synchrotron a protons du CERN. Le but de ce travail etait l'etude des mecanismes de production des paires hyperons antihyperons et des hyperons excites (antihyperons excites) au travers des sections efficaces et des distributions angulaires. Pour la plupart des voies, ces distributions angulaires, dans le systeme du centre de masse, indiquent une forte tendance a l'emission vers l'avant de l'antihyperon, ce qui suggere un mecanisme de production de type peripherique. Nous avons compare les resultats de certaines sections efficaces avec des previsions obtenues a partir de la theorie de symetrie unitaire SU{sub 3}. (auteur)

  13. Measurement of the deuteron tensor polarization at the sup 3 He->d+p vertex up to internal momenta of 0.43 GeV/c

    CERN Document Server

    Sitnik, I M; Tomasi-Gustafsson, E; Azhgirey, L S; Ball, J; Bimbot, L; Bisson, Y; Boivin, M; Borzunov, Yu T; Boyard, J L; Courtat, P; Gacougnolle, R; Garçon, M; Golovanov, L B; Hennino, T; Jones, M; Kirillov, D A; Kunne, Ronald Alexander; Malinina, L V; Nedev, S; Piskunov, N M; Punjabi, V; Rekalo, M P; Sans, J L; Skowron, R; Strokovsky, E A; Yonnet, J

    2000-01-01

    The tensor polarization of deuterons, rho sub 2 sub 0 , emitted at zero degree in the sup 1 H( sup 3 He, d-reversible)X reaction, was measured at the Saturne National Laboratory in Saclay, using the SPES4 magnetic channel and the HYPOM polarimeter. The momentum of the detected deuterons was kept fixed at 3.77 GeV/c, while the momentum of the sup 3 He beam was varied from 5.66 to 4.60 GeV/c; this provided a range of internal momenta of a deuteron in sup 3 He, k, from 0 to 0.43 GeV/c.

  14. Ordered GeSi nanorings grown on patterned Si (001 substrates

    Directory of Open Access Journals (Sweden)

    Ma Yingjie

    2011-01-01

    Full Text Available Abstract An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001 substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings. PACS code1·PACS code2·more Mathematics Subject Classification (2000 MSC code1·MSC code2·more

  15. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  16. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  17. Energy distributions study of spallation neutrons produced at 0 deg. by proton beams (0.8 GeV and 1.6 GeV) and deuteron beams (1.2 and 1.6 GeV)

    International Nuclear Information System (INIS)

    Martinez, Eugenie

    1997-01-01

    We are studying the energy distributions of spallation neutrons produced at 0 deg. by protons of 0.8 GeV up to 1.6 GeV and deuterons of 1.2 and 1.6 GeV with two complementary experimental techniques: the time of flight measurement with tagged incident protons for low energy neutrons (3-400 MeV) and the use of a magnetic spectrometer at high energy (E ≥ 200 MeV). These measurements enable us to measure for the first time the neutron spectra for incident energies higher than 800 MeV. We have compared the double differential cross sections produced with 1.2 GeV protons on several thin targets (Al, Fe, Zr, W, Pb and Th). The neutron production obtained for a lead target is also studied for various energies (0.8 up to 1.6 GeV) and incident particles (p, d). Data are compared with theoretical simulations carried out using the TIERCE system and the intranuclear cascade model of J. Cugnon associated to the decay code of D. Durand. The neutron spectra calculated by using the HETC and MCNP codes, included in TIERCE, are significantly higher than the measured distributions. A better agreement is observed with the results of the Cugnon's cascade model. (author) [fr

  18. Design and testing of the measuring equipment for the detection of 71Ge and 69Ge within the gallium-solar-neutrino experiment

    International Nuclear Information System (INIS)

    Huebner, M.

    1980-01-01

    A low level measuring system has been developed for the Ga-solar-neutrino experiment, to detect the reaction 71 Ga (νsub(e),e - ) 71 Ge by the decay 71 Ge (Tsub(1/2) = 11. 4 d, 100% electron capture). An estimate based on the solar standard model gives 15 71 Ge atoms produced by solar neutrinos (pp and pep). As a monitor for background reactions in the target, the detectability of the 69 Ga (p,n) 69 Ge reaction by the decay 69 Ge (Tsub(1/2) = 39 h, 37% β + -decay, 63% electron capture) has been considered. To test the system, the detectors are mounted in a low level laboratory lead box. (orig./WB) [de

  19. Neutron-capture cross-section measurements of 74Ge and 76Ge in the energy region 0.4-14.8 MeV for neutrinoless double β decay applications

    Science.gov (United States)

    Bhike, Megha; Tornow, Werner

    2013-10-01

    Fast neutron capture cross sections for the reactions 74Ge(n, γ)75Ge and 76Ge(n, γ)77Ge have been measured in the neutron energy region 0.4-14.8 MeV with the activation method. The results are important to identify backgrounds in the neutrinoless double- β decay experiments GERDA and MAJORANA, which use germanium as both source and detector. Isotopically enriched targets which consisted of 86% of 76Ge and 14% of 74Ge were irradiated with mono-energetic neutrons produced via 3H(p,n)3He, 2H(d,n)3He and 3H(d,n)4He reactions. The cross sections were determined relative to 197Au(n, γ)198Au, 115In(n,n')115mIn and 197Au(n,2n)196Au standard cross sections. The activities of the products were measured using high-resolution γ-ray spctroscopy. The present results are compared with the evaluated data from ENDF/B-VII.1 and TALYS.

  20. Magnetocaloric effect of Gd5 Si2 Ge2 alloys in low magnetic field

    Indian Academy of Sciences (India)

    Administrator

    Gd5Si2Ge2 compounds are promising as high-performance magnetic refrigerants working room temperature in relatively low ... 2000) as well as their magnetic properties (Pecharsky ... tron microscope (SEM) with the energy dispersive X-ray.

  1. Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

    Science.gov (United States)

    Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

    2017-10-30

    We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

  2. Pseudorapidity distributions of charged particles produced in bar pp interactions at √s =630 and 1800 GeV

    International Nuclear Information System (INIS)

    Abe, F.; Amidei, D.; Apollinari, G.; Ascoli, G.; Atac, M.; Auchincloss, P.; Baden, A.R.; Barbaro-Galtieri, A.; Barnes, V.E.; Bedeschi, F.; Belforte, S.; Bellettini, G.; Bellinger, J.; Bensinger, J.; Beretvas, A.; Berge, P.; Bertolucci, S.; Bhadra, S.; Binkley, M.; Blair, R.; Blocker, C.; Bofill, J.; Booth, A.W.; Brandenburg, G.; Brown, D.; Byon, A.; Byrum, K.L.; Campbell, M.; Carey, R.; Carithers, W.; Carlsmith, D.; Carroll, J.T.; Cashmore, R.; Cervelli, F.; Chadwick, K.; Chapin, T.; Chiarelli, G.; Chinowsky, W.; Cihangir, S.; Cline, D.; Connor, D.; Contreras, M.; Cooper, J.; Cordelli, M.; Curatolo, M.; Day, C.; DelFabbro, R.; Dell'Orso, M.; DeMortier, L.; Devlin, T.; DiBitonto, D.; Diebold, R.; Dittus, F.; DiVirgilio, A.; Elias, J.E.; Ely, R.; Errede, S.; Esposito, B.; Flaugher, B.; Focardi, E.; Foster, G.W.; Franklin, M.; Freeman, J.; Frisch, H.; Fukui, Y.; Garfinkel, A.F.; Giannetti, P.; Giokaris, N.; Giromini, P.; Gladney, L.; Gold, M.; Goulianos, K.; Grosso-Pilcher, C.; Haber, C.; Hahn, S.R.; Handler, R.; Harris, R.M.; Hauser, J.; Hessing, T.; Hollebeek, R.; Hu, P.; Hubbard, B.; Hurst, P.; Huth, J.; Jensen, H.; Johnson, R.P.; Joshi, U.; Kadel, R.W.; Kamon, T.; Kanda, S.; Kardelis, D.A.; Karliner, I.; Kearns, E.; Kephart, R.; Kesten, P.; Keutelian, H.; Kim, S.; Kirsch, L.; Kondo, K.; Kruse, U.; Kuhlmann, S.E.; Laasanen, A.T.; Li, W.; Liss, T.; Lockyer, N.; Marchetto, F.; Markeloff, R.; Markosky, L.A.; McIntyre, P.; Menzione, A.; Meyer, T.; Mikamo, S.; Miller, M.; Mimashi, T.; Miscetti, S.; Mishina, M.; Miyashita, S.; Mondal, N.; Mori, S.; Morita, Y.; Mukherjee, A.; Newman-Holmes, C.; Nodulman, L.; Paoletti, R.; Para, A.; Patrick, J.; Phillips, T.J.; Piekarz, H.; Plunkett, P.; Pondrom, L.; Proudfoot, J.; Punzi, G.; Quarrie, D.; Ragan, K.; Redlinger, G.; Rhoades, J.; Rimondi, F.; Ristori, L.; Rohaly, T.; Roodman, A.; Sansoni, A.; Sard, R.; Scarpine, V.; Schlabach, P.; Schmidt, E.E.; Schoessow, P.; Schub, M.H.; Schwitters, R.; Scribano, A.; Segler, S.

    1990-01-01

    We present measurements of the pseudorapidity (η) distribution of charged particles (dN ch /dη) produced with |η|≤3.5 in proton-antiproton collisions at √s of 630 and 1800 GeV. We measure dN ch /dη at η=0 to be 3.18±0.06(stat)±0.10(syst) at 630 GeV, and 3.95±0.03(stat)±0.13(syst) at 1800 GeV. Many systematic errors in the ratio of dN ch /dη at the two energies cancel, and we measure 1.26±0.01±0.04 for the ratio of dN ch /dη at 1800 GeV to that at 630 GeV within |η|≤3. Comparing to lower-energy data, we observe an increase faster than ln(s) in dN ch /dη at η=0

  3. 1H(d,2p)n reaction at 2 GeV deuteron energy

    International Nuclear Information System (INIS)

    Erohuml, J.; Fodor, Z.; Koncz, P.; Seres, Z.; Perdrisat, C.F.; Punjabi, V.; Boudard, A.; Bonin, B.; Garcon, M.; Lombard, R.; Mayer, B.; Terrien, Y.; Tomasi, E.; Boivin, M.; Yonnet, J.; Bhang, H.C.; Youn, M.; Belostotsky, S.L.; Grebenuk, O.G.; Nikulin, V.N.; Kudin, L.G.

    1994-01-01

    The 1 H(d,2p)n deuteron breakup reaction was measured at 2 GeV deuteron energy in a kinematically complete experiment. Fivefold differential cross sections are given in a wide range of kinematical variables and analyzed in terms of impulse approximation and NN rescattering. The deuteron momentum density was determined and deviations were found depending on the value of the four-momentum transfer |t| in the scattering process. At low |t| the momentum densities are in good agreement with the impulse approximation whereas large discrepancies were found above q∼200 MeV/c when the four-momentum transfer was large. Various possible origins of the anomalous behavior at high q values are discussed

  4. Many-pion production in π+d reactions at 15 GeV/c

    International Nuclear Information System (INIS)

    Hagopian, V.; Gluch, D.; Hagopian, S.; Horne, C.P.; Jenkins, M.; Lannutti, J.E.; Williams, P.K.; Wind, B.; Cohn, H.O.; Bugg, W.M.; Condo, G.T.; Handler, T.; Hart, E.L.

    1979-01-01

    The average number of charged pions produced in π + d reactions at 15-GeV/c π + momentum is 3.6 +- 0.1 and the average number of π 0 's is 1.9 +- 0.2. The average number of π 0 's produced is essentially independent of the number of charged pions. About 45% of the events have four or more charged pions in the final state. The exclusive final states with four or more charged pions with zero or one π 0 are presented and compared with modified phase-space background computations. Other than the well-known resonances, such as the rho 0 , no new peaks have been observed. Coherently produced multipion systems with up to seven pions are also discussed. Detailed cross-section information for every final state is presented

  5. Investigation of the diffractive reaction p + N → [Σ+K0] + N at the proton energy of Ep = 70 GeV and observation of the decay process X(2000) → Σ+K0

    International Nuclear Information System (INIS)

    Vavilov, D.V.; Viktorov, V.A.; Golovkin, S.V.; Kozhevnikov, A.P.; Kubarovsky, V.P.; Kurshetsov, V.F.; Landsberg, L.G.; Molchanov, V.V.; Mukhin, V.A.; Petrenko, S.V.; Kolganov, V.Z.; Lomkatsi, G.S.; Nilov, A.F.; Smolyankin, V.T.

    2000-01-01

    The diffractive reaction p + N → [Σ + K 0 ] + N induced by 70-GeV protons is investigated at the SPHINX facility. The measured mass spectrum of the Σ + K 0 system originating from this reaction shows a resonance structure with a mass of M = 1995 ± 18 MeV and a width of Γ = 90 ± 32 MeV. The cross section for the formation of this structure is found to be σ = 182 ± 38 nb per target nucleon. These data comply well with the results that we obtained previously in studying the reaction p + N → [Σ 0 K + ] + N, where we observed the formation of the X(2000) → Σ 0 K + state, a candidate for an exotic baryon with hidden strangeness. The measured ratio R of the two branching fractions, R = Br[X(2000) → Σ + K 0 ]/Br[X(2000) → Σ 0 K + ] =1.91 ± 0.38, is consistent with the value of R = 2 expected for an isospin-1/2 baryon

  6. Pseudorapidity dependence of charged hadron transverse momentum spectra in d+Au collisions at √(sNN )=200 GeV

    Science.gov (United States)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.

    2004-12-01

    We have measured the transverse momentum distributions of charged hadrons in d+Au collisions at √(sNN )=200 GeV in the range of 0.5< pT <4.0 GeV/c . The total range of pseudorapidity, η , is 0.2<η<1.4 , where positive η is in the deuteron direction. The data has been divided into three regions of pseudorapidity, covering 0.2<η<0.6 , 0.6<η<1.0 , and 1.0<η<1.4 , and has been compared to charged hadron spectra from p+ p¯ collisions at the same energy. There is a significant change in the spectral shape as a function of pseudorapidity. As η increases we see a decrease in the nuclear modification factor RdAu .

  7. The study of D{sup {+-}} and D{sup 0} meson production in deep inelastic scattering at HERA II with the ZEUS detector

    Energy Technology Data Exchange (ETDEWEB)

    Nicholass, Daniel

    2008-12-15

    Installed in 2000/2001, the ZEUS micro vertex detector provided the capability to reconstruct secondary vertices displaced from the primary by distances of the order 100 {mu}m. In order to be useful for tagging heavy flavour mesons the micro vertex detector was aligned with a combination of tracks from cosmic events and ep events in the HERA collider. This thesis presents measurements of D{sup {+-}} and D{sup 0} meson production obtained with the ZEUS detector at HERA using an integrated luminosity of 133.6 pb{sup -1}. The measurements cover the kinematic range 5 < Q{sup 2} < 1000 GeV{sup 2}, 0.02 < y < 0.7, 1.5 < p{sub T}{sup D} < 15 GeV and vertical stroke {eta}{sup D} vertical stroke < 1.6. Combinatorial background to the D meson signals is reduced by using the ZEUS micro vertex detector to reconstruct displaced secondary vertices. Production cross sections are compared with the predictions of next-to-leading order QCD which is found to describe the data well. Measurements are extrapolated to the full kinematic phase space in order to obtain the open charm contribution, F{sub 2}{sup c} {sup anti} {sup c}, to the proton structure function, F{sub 2}. (orig.)

  8. The germanides Er{sub 5}Pd{sub 4}Ge{sub 8} and Tm{sub 5}Pd{sub 4}Ge{sub 8}. 3D [Pd{sub 4}Ge{sub 8}] polyanions with Ge{sub 2} dumb-bells and Ge{sub 4} chains in cis-conformation

    Energy Technology Data Exchange (ETDEWEB)

    Heying, Birgit; Rodewald, Ute C.; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2017-07-01

    Tm{sub 5}Pd{sub 4}Ge{sub 8} was synthesized by melting of the elements in an arc-melting furnace. The new germanide was characterized by powder and single-crystal X-ray diffraction: own structure type, P2{sub 1}/m, a=574.3(1), b=1380.4(3), c=836.4(1) pm, β=107.57(2) , V=0.6321 nm{sup 3}, wR2=0.0578, 2533 F{sup 2} values, 86 variables. The palladium and germanium atoms built up a three-dimensional [Pd{sub 4}Ge{sub 8}]{sup 15-} polyanionic network which contains a unique germanium substructure composed of the Zintl anions Ge{sub 2}{sup 6-} dumb-bells and Ge{sub 4}{sup 10-} chains in cis-conformation. The palladium atoms within the network have distorted square pyramidal germanium coordination. The three crystallographically independent thulium atoms have coordination numbers 15, 16 and 17 with partial motifs of the Frank-Kasper type polyhedra. The isotypic germanide Er{sub 5}Pd{sub 4}Ge{sub 8} forms only after annealing the arc-melted sample at 1070 K for 1 week: a=575.14(9), b=1386.3(3), c=838.4(1) pm, β=107.51(2) , V=0.6375 nm{sup 3}.

  9. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  10. Measurement of the D{sup *{+-}} meson production cross section at low and medium Q{sup 2} with the H1 detector at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Dobre, Monica

    2012-11-15

    The inclusive production of D{sup {+-}}(2010) mesons in deep inelastic scattering is studied using data recorded by the H1 experiment in the years 1999 to 2000 and corresponding to an integrated luminosity of 47.66 pb{sup -1}. The measurement covers the region 2GeV{sup 2} in photon virtuality and the region 0.02D{sup *{+-}} meson production is restricted in transverse momentum to p{sub T}(D{sup *})>1.25 GeV and in pseudorapidity to vertical stroke {eta}(D{sup *}) vertical stroke <1.8. Single and double differential cross sections are compared to leading order and next-to-leading order perturbative QCD predictions.

  11. Impact of Channel, Stress-Relaxed Buffer, and S/D Si1- x Ge x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

    Science.gov (United States)

    Othman, Nurul Aida Farhana; Hatta, Sharifah Fatmadiana Wan Muhamad; Soin, Norhayati

    2018-04-01

    Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising performance booster to replace silicon (Si) due to its high holes mobility. This paper presents a three-dimensional simulation by the Sentaurus technology computer-aided design to study the effects of stressors—channel stress, stress-relaxed buffer (SRB), and source/drain (S/D) epitaxial stress—on different bases of FinFET, specifically silicon germanium (SiGe) and Ge-based, whereby the latter is achieved by manipulating the Ge mole fraction inside the three layers; their effects on the devices' figures-of-merits were recorded. The simulation generates an advanced calibration process, by which the drift diffusion simulation was adopted for ballistic transport effects. The results show that current enhancement in p-type FinFET (p-FinFET) with 110% is almost twice that in n-type FinFET (n-FinFET) with 57%, with increasing strain inside the channel suggesting that the use of strain is more effective for holes. In SiGe-based n-FinFET, the use of a high-strained SRB layer can improve the drive current up to 112%, while the high-strain S/D epitaxial for Ge-based p-FinFET can enhance the on-state current to 262%. Further investigations show that the channel and S/D doping are affecting the performances of SiGe-based FinFET with similar importance. It is observed that doping concentrations play an important role in threshold voltage adjustment as well as in drive current and subthreshold leakage improvements.

  12. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

    Science.gov (United States)

    2015-10-09

    and conclusions The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8...Abstract The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8, SnD4. The...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si -compatible materials and devices in the Si - Ge -Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final

  13. Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    International Nuclear Information System (INIS)

    Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

    2016-01-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

  14. Programme wood/energy 2000-2006. Activity Report for 2000-2004; Programme national Bois-Energie 2000-2006. Rapport d'activites 2000-2004

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-07-01

    When ADEME launched its Wood fuel programme throughout all of France in late 1999, its aim was to guide this resource supply chain to maturity and stable development in all user sectors: domestic, multi-family housing, commercial/institutional and industrial applications. To this end the Wood fuel Programme 2000-2006 was assigned objectives and endowed with significant financial means for studies and coordination in order to support and carry out general-interest projects, piloted by ADEME. The stated goal was to replace fossil fuels, avoid carbon emissions and establish quality assurance standards for household firewood and wood-fired devices. This report makes a status of ADEME's Wood fuel programme for the 2000-2004 era: - Domestic heating: After a drop during the 1990's, figures since 1999 of sales of wood-fuel domestic heating equipment (closed heaters, glass-door fires and stoves) have shown a significant rise. On average over 30 years, wood consumption has risen to 7.2 million TOE (40 million cubic metres) per year; - Industry: It is thought there are 1000 wood-fired heaters (above 1 megawatt) used in French industry. These are found mainly in timber-based industries and in timber crushing plants. This amounts to a total power output of 2.5 gigawatts. In the primary and secondary wood processing industries, the increase in the number of wood-fired boilers and energy produced has reached 5% per year Results of a call for carbon energy projects (APEC) was 61 submitted of which 52 were selected; 9 projects pending (166.5 K of aid from ADEME); and 35 projects begun (1,649 K of aid from ADEME). - Local authority and service sector wood-fired heating systems: At the end of 2004, the number of local authority active boilers was 641, producing 430 megawatts. This is an increase of an average of 13% year on year since 2000. By the end of 2004, the target had already been met for the number of boilers being financed (1,090). By 2006 however we still need to

  15. Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S. [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K' s Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

    2016-07-18

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

  16. Centrality Dependence of Charged-Hadron Transverse-Momentum Spectra in d+Au Collisions at (sNN)=200 GeV

    Science.gov (United States)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Noell, A.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sawicki, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Teng, R.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wadsworth, B.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.; Zhang, J.

    2003-08-01

    We have measured transverse momentum distributions of charged hadrons produced in d+Au collisions at (sNN)=200 GeV. The spectra were obtained for transverse momenta 0.25GeV/c, in a pseudorapidity range of 0.2<η<1.4 in the deuteron direction. The evolution of the spectra with collision centrality is presented in comparison to p+p¯ collisions at the same collision energy. With increasing centrality, the yield at high transverse momenta increases more rapidly than the overall particle density, leading to a strong modification of the spectral shape. This change in spectral shape is qualitatively different from observations in Au+Au collisions at the same energy. The results provide important information for discriminating between different models for the suppression of high-pT hadrons observed in Au+Au collisions.

  17. The Solar Flare of the 14th of July 2000 (L3+C detector results)

    CERN Document Server

    Achard, P; Aguilar-Benítez, M; Van den Akker, M; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alviggi, M G; Anderhub, H; Andreev, V P; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Bajo, A; Baksay, G; Baksay, L; Bähr, J; Baldew, S V; Banerjee, S; Banerjee, Sw; Barczyk, A; Barillère, R; Bartalini, P; Basile, M; Batalova, N; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bellucci, L; Berbeco, R; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biglietti, M; Biland, A; Blaising, J J; Blyth, S C; Bobbink, G J; Böhm, A; Boldizsar, L; Borgia, B; Bottai, S; Bourilkov, D; Bourquin, M; Braccini, S; Branson, J G; Brochu, F; Burger, J D; Burger, W J; Cai, X D; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A; Casaus, J; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada, M; Chamizo-Llatas, M; Chiarusi, T; Chang, Y H; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chiefari, G; Cifarelli, L; Cindolo, F; Clare, I; Clare, R; Coignet, G; Colino, N; Costantini, S; Dela Cruz, B; Cucciarelli, S; De Asmundis, R; Dglon, P; Debreczeni, J; Degré, A; Dehmelt, K; Deiters, K; Della Volpe, D; Delmeire, E; Denes, P; De Notaristefani, F; De Salvo, A; Diemoz, M; Dierckxsens, M; Ding, L K; Dionisi, C; Dittmar, M; Doria, A; Dova, M T; Duchesneau, D; Duda, M; Durán, I; Echenard, B; Eline, A; El-Hage, A; El-Mamouni, H; Engler, A; Eppling, F J; Extermann, P; Faber, G; Falagán, M A; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, M; Ferguson, T; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, F; Fisher, W; Forconi, G; Freudenreich, K; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gataullin, M; Gentile, S; Giagu, S; Gong, Z F; Grenier, G; Grabosch, H J; Grimm, O; Groenstege, H; Grünewald, M W; Guida, M; Guo, Y N; Gupta, S K; Gupta, V K; Gurtu, A; Gutay, L J; Haas, D; Haller, C; Hatzifotiadou, D; Hayashi, Y; He, Z X; Hebbeker, T; Herv, A; Hirschfelder, J; Hofer, H; Hohlmann, M; Holzner, A; Hou, S R; Huo, A X; Ito, N; Jin, B N; Jindal, P; Jing, C L; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kantserov, V A; Kaur, M; Kawakami, S; Kienzle-Focacci, M N; Kim, J K; Kirkby, Jasper; Kittel, W; Klimentov, A; König, A C; Kok, E; Korn, A; Kopal, M; Koutsenko, V F; Kraber, M; Kuang, H H; Krämer, R W; Krüger, A; Kuijpers, J; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Lei, Y; Leich, H; Leiste, R; Levtchenko, M; Levchenko, P M; Li, C; Li, L; Li, Z C; Likhoded, S; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lü, Y S; Luci, C; Luminari, L; Lustermann, W; Ma, W G; Ma, X H; Ma, Y Q; Malgeri, L; Malinin, A; Maña, C; Mans, J; Martin, J P; Marzano, F; Mazumdar, K; McNeil, R R; Meng, X W; Merola, L; Meschini, M; Metzger, W J; Mihul, A; Van Mil, A; Milcent, H; Mirabelli, G; Mnich, J; Mohanty, G B; Monteleoni, B; Muanza, G S; Muijs, A J M; Musy, M; Nagy, S; Nahnhauer, R; Naumov, V A; Natale, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nisati, A; Novák, T; Nowak, H; Ofierzynski, R A; Organtini, G; Pal, I; Palomares, C; Paolucci, P; Paramatti, R; Parriaud, J F; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, F; Pedace, M; Pensotti, S; Perret-Gallix, D; Petersen, B; Piccolo, D; Pierella, F; Pieri, M; Pioppi, M; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Pothier, J; Prokofev, D; Prokofiev, D O; Qing, C R; Rahal-Callot, G; Rahaman, M A; Raics, P; Raja, N; Ramelli, R; Rancoita, P G; Ranieri, R; Raspereza, A V; Ravindran, K C; Razis, P; Rembeczki, S; Ren, D; Rescigno, M; Reucroft, S; Rewiersma, P A M; Riemann, S; Rojkov, A; Romero, L; Rosca, A; Rosemann, C; Rosenbleck, C; Rosier-Lees, S; Roth, S; Rubio, J A; Ruggiero, G; Rykaczewski, H; Sakharov, A; Saremi, S; Sarkar, S; Salicio, J; Sánchez, E; Schäfer, C; Shchegelskii, V; Schöneich, B; Schotanus, D J; Sciacca, C; Servoli, L; Shen, C Q; Shevchenko, S; Shivarov, N; Shoutko, V; Shumilov, E; Shvorob, A; Son, D; Souga, C; Spillantini, P; Steuer, M; Stickland, D P; Stoyanov, B; Strässner, A; Sudhakar, K; Sultanov, G G; Sun, L Z; Sushkov, S; Suter, H; Swain, J D; Szillási, Z; Tang, X W; Tarjan, P; Tauscher, L; Taylor, L; Tellili, B; Teyssier, D; Timmermans, C; Ting, Samuel C C; Ting, S M; Tonwar, S C; Tóth, J; Trowitzsch, G; Tully, C; Tung, K L; Ulbricht, J; Unger, M; Valente, E; Verkooijen, H; Van de Walle, R T; Vásquez, R; Vesztergombi, G; Vetlitskii, I; Viertel, G; Vivargent, M; Vlachos, S; Vodopyanov, I; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Wadhwa, M; Wang, G; Wang, Q; Wang, X L; Wang, X W; Wang, Z M; Weber, M; Van Wijk, R; Wijnen, T A M; Wilkens, H; Wynhoff, S; Xia, L; Xu, Y P; Xu, Z Z; Yang, B Z; Yang, C G; Yang, H J; Yang, M; Yang, X F; Yao, Z G; Yeh, S C; Yu, Z Q; Zalite, A; Zalite, Yu; Zhang, C; Zhang, F; Zhang, J; Zhang, S; Zhang, Z P; Zhao, J; Zhou, S J; Zhu, G Y; Zhu, R Y; Zhu, Q Q; Zhuang, H L; Zichichi, A; Zimmermann, B; Zöller, M; Zwart, A N M

    2006-01-01

    Several experiments have reported observations on possible correlations between the flux of high energy muons and intense solar flares. If confirmed, these observations would have significant implications for acceleration processes in the heliosphere able to accelerate protons and other ions to energies of at least tens of GeV. The solar flare of the 14 July 2000 offers a unique opportunity for the L3+C experiment to search for a correlated enhancement in the flux of muons using the L3 precision muon spectrometer. Its capabilities for observing a directional excess in the flux of muons above 15 GeV (corresponding to primary proton energies above 40 GeV) are presented along with observations made on the 14th of July 2000. We report an excess which appeared at a time coincident with the peak increase of solar protons observed at lower energies. The probability that the excess is a background fluctuation is estimated to be 1%. No similar excess of the muon flux was observed up to 1.5 hours after the solar flare ...

  18. Novel Au- and Ge-based two-dimensional materials formed through topotactic transitions of AlB2-like structures

    Science.gov (United States)

    Tsetseris, Leonidas

    2016-07-01

    The topotactic reaction of a layered compound, for example CaGe2, with HCl solution is a common and facile method to produce two-dimensional (2D) materials. In this work we demonstrate with first-principles calculations that this technique can potentially lead to a whole new family of 2D materials starting from three-dimensional crystals with AlB2-like structures. As representative cases, we show here that the de-intercalation of Sc and Ca atoms from ScAuGe and Ca2AuGe3 crystals is strongly exothermic and produces the stable 2D monolayers AuGeH and AuGe3H3, respectively. Remarkably, both metals (AuGeH) and semiconductors (AuGe3H3) can be prepared by this method. Based on the broad availability of AlB2-like structures with varying stoichiometries, there are several possibilities to prepare novel functional 2D materials with suitable topotactic transitions.

  19. Preliminary Physics Summary: Measurement of D$^0$, D$^+$, D$^{*+}$ and D$_{\\rm s}$ production in Pb-Pb collisions at ${\\sqrt{s}_{\\rm NN}}=5.02$ TeV

    CERN Document Server

    We report preliminary measurements of the production of prompt D$^0$, D$^+$, D$^{*+}$ and D$_{\\rm s}^+$ mesons in Pb-Pb collisions in the centrality classes 0-10%, 30-50% and 60-80%, at the centre-of-mass energy $\\sqrt{s_{\\rm NN}}=5.02$ TeV per nucleon-nucleon collision. The production yields are measured at mid-rapidity ($|y|<0.5$) as a function of transverse momentum ($p_{\\rm T}$). The $p_{\\rm T}$ intervals covered in central collisions are: $1\\lt p_{\\rm T}<50$ GeV/$c$ for D$^0$, $2\\lt p_{\\rm T}<36$ GeV/$c$ for D$^+$, $3\\lt p_{\\rm T}\\lt 50$ GeV/$c$ for D$^{*+}$, and $4\\lt p_{\\rm T}<16$ GeV/$c$ for D$_{\\rm s}^+$ mesons. The nuclear modification factors $R_{\\rm AA}$ are calculated using a proton-proton reference at $\\sqrt{s}=5.02$ TeV obtained by scaling the D-meson cross sections measured at $\\sqrt{s}=7$ TeV.

  20. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    Science.gov (United States)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  1. Diffractive D{sup *}-mesons production in DIS at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Vinokurova, Svetlana

    2010-05-15

    This thesis presents a measurement of the cross sections for the production of the charmed mesons in diffractive deep inelastic positron-proton scattering (DIS) interactions of the type ep{yields}eXY, where the system X is separated from a low-mass system Y, by a large rapidity gap where no particles are observed. These diffractive processes can be explained as a result of the exchange of a strongly interacting colour singlet object between the final state particles. In this measurement data taken with the H1 detector in the years 1999-2000, corresponding to an integrated luminosity of L{sub int}=46.7 pb{sup -1} are used. Inclusive DIS events are selected in the kinematic range with the momentum transfer Q{sup 2} element of [2;100] GeV and inelasticity y{sub bj} element of [0.05;07]. The charm quark is tagged by requiring a D{sup *} meson decaying into the channel D{sup *}{yields}D{sup 0}{pi}{sub slow}{yields}K{pi}{pi}{sub slow} inside the central tracking system with transverse momenta p{sub t}(D{sup *})>2 GeV. The forward components of the H1 detector are used to select genuine diffractive events on the basis of the forward sub-detectors activity and of the presence a large rapidity gap in the final state hadrons. The visible charm production cross sections are measured in the diffractive kinematic range M{sub Y} < 1.6 GeV, vertical stroke t vertical stroke < 1 GeV{sup 2} and x{sub P} < 0.04 to be {sigma}(ep{yields}e{sup '}(D{sup *}X)Y)=249{+-}31(stat.){+-}30(sys) pb, where the first uncertainty is statistical and the second systematic. The shape of the differential distributions for diffractive D{sup *} production are well described by the collinear factorisation model which is implemented in the Monte Carlo simulation RAPGAP. (orig.)

  2. Pion, kaon, proton and anti-proton transverse momentum distributions from p+p and d+Au collisions at √SNN = 200 GeV

    International Nuclear Information System (INIS)

    Adams, J.; Adler, C.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Anderson, M; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bhardwaj, S.; Bhaskar, P.; Bhati, A.K.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.; Bravar, A.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Carroll, J.; Castillo, J.; Castro, M.; Cebra, D.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Chernenko, S.P.; Cherney, M.; Chikanian, A.; Choi, B.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Majumdar, M.R.; Eckardt, V.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faine, V.; Faivre, J.; Fatemi, R.; Filimonov, K.; Filip, P.; Finch, E.; Fisyak, Y.; Flierl, D.; Foley, K.J.; Fu, J.; Gagliardi, C.A.; Ganti, M.S.; Gutierrez, T.D.; Gagunashvili, N.; Gans, J.; Gaudichet, L.; Germain, M.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grigoriev, V.; Cronstal, S.; Grosnick, D.; Guedon, M.; Guertin, S.M.; Gupta, A.; Gushin, E.; Hallman, T.J.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry, T.W.; Heppelmann, S.; Herston, T.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Horsley, M.; Huang, H.Z.; Huang, S.L.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Johnson, I.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kaneta, M.; Kaplan, M.; Keane, D.; Kiryluk, J.; Kisiel, A.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Konstantinov, A.S.; Kopytine, S.M.; Kotchenda, L.; Kovalenko, A.D.; Kramer, M.; Kravtsov, P.; Krueger, K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.

    2003-01-01

    Identified mid-rapidity particle spectra of π ± , K ± , and p((bar p)) from 200 GeV p+p and d+Au collisions are reported. A time-of-flight detector based on multi-gap resistive plate chamber technology is used for particle identification. The particle-species dependence of the Cronin effect is observed to be significantly smaller than that at lower energies. The ratio of the nuclear modification factor (R dAu ) between (p+ (bar p)) and charged hadrons (h) in the transverse momentum range 1.2 T < 3.0 GeV/c is measured to be 1.19 ± 0.05(stat) ± 0.03(syst) in minimum-bias collisions and shows little centrality dependence. The yield ratio of (p + (bar p))/h in minimum-bias d+Au collisions is found to be a factor of 2 lower than that in Au+Au collisions, indicating that the Cronin effect alone is not enough to account for the relative baryon enhancement observed in heavy ion collisions at RHIC

  3. Pseudorapidity Distribution of Charged Particles in d+Au Collisions at √(sNN)=200 GeV

    Science.gov (United States)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.

    2004-08-01

    The measured pseudorapidity distribution of primary charged particles in minimum-bias d+Au collisions at √(sNN)=200 GeV is presented for the first time. This distribution falls off less rapidly in the gold direction as compared to the deuteron direction. The average value of the charged particle pseudorapidity density at midrapidity is ∣η∣≤0.6=9.4±0.7(syst) and the integrated primary charged particle multiplicity in the measured region is 82±6(syst). Estimates of the total charged particle production, based on extrapolations outside the measured pseudorapidity region, are also presented. The pseudorapidity distribution, normalized to the number of participants in d+Au collisions, is compared to those of Au+Au and p+p¯ systems at the same energy. The d+Au distribution is also compared to the predictions of the parton saturation model, as well as microscopic models.

  4. Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

    International Nuclear Information System (INIS)

    Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

    2014-01-01

    Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3

  5. Materials and devices for quantum information processing in Si/SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sailer, Juergen

    2010-12-15

    In this thesis, we cover and discuss the complete way from material science, the fabrication of two-dimensional electron systems (2DES) in Si/SiGe heterostructures in molecular beam epitaxy (MBE), to quantum effects in few-electron devices based on these samples. We applied and compared two different approaches for the creation of pseudo-substrates that are as smooth, relaxed and defect free as possible. In the 'graded buffer' concept, starting from pure Si, the Ge content of the SiGe alloy is slowly and linearly increased until the desired Ge content is reached. In contrast, in the so-called 'low-temperature Si' concept, the SiGe alloy is deposited directly with the final Ge content, but onto a layer of highly defective Si. In terms of crystal defects, the 'graded buffer' turned out to be superior in comparison to the 'low-temperature Si' concept at the expense of a significantly higher material consumption. By continued optimization of the growth process, aiming at reducing the influence of the impurity, it nevertheless became possible to improve the charge carrier mobility from a mere 2000 cm{sup 2}/(Vs) to a record mobility exceeding 100 000 cm{sup 2}/(Vs). Within this work, we extended our MBE system with an electron beam evaporator for nuclear spin free {sup 28}Si. Together with the already existing effusion cell for {sup 70}Ge we were able to realize first 2DES in a nuclear spin free environment after successfully putting it to operation. The highest mobility 2DES in a nuclear spin free environment which have been realized in this thesis exhibited electron mobilities of up to 55 000 cm{sup 2}/(Vs). Quantum effects in Si/SiGe have been investigated in two- and zero-dimensional nanostructures. A remarkable phenomenon in the regime of the integer quantum Hall effect in Si/SiGe 2DES has been discovered and researched. For applications in quantum information processing and for the creation of qubits it is mandatory to

  6. Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

    Science.gov (United States)

    Smagina, Zh. V.; Zinovyev, V. A.; Rudin, S. A.; Novikov, P. L.; Rodyakina, E. E.; Dvurechenskii, A. V.

    2018-04-01

    Regular pit-patterned Si(001) substrates were prepared by electron-beam lithography followed by plasma chemical etching. The geometry of the pits was controlled by varying the etching conditions and the electron-beam exposure duration. It was shown that the location of three-dimensional (3D) Ge nanoislands subsequently grown on the pit-patterned Si substrates depends on the shape of the pit bottom. In the case of pits having a sharp bottom, 3D Ge islands nucleate inside the pits. For pits with a wide flat bottom, the 3D Ge island nucleation takes place at the pit periphery. This effect is attributed to the strain relaxation depending not only on the initial pit shape, but also on its evolution during the Ge wetting layer deposition. It was shown by Monte Carlo simulations that in the case of a pit with a pointed bottom, the relaxation is most effective inside the pit, while for a pit with a wide bottom, the most relaxed area migrates during Ge deposition from the pit bottom to its edges, where 3D Ge islands nucleate.

  7. A study of the $\\omega\\omega$ channel produced in central pp interactions at 450 GeV/c

    CERN Document Server

    Barberis, D.; Close, F.E.; Danielsen, K.M.; Donskov, S.V.; Earl, B.C.; Evans, D.; French, B.R.; Hino, T.; Inaba, S.; Jacholkowski, A.; Jacobsen, T.; Khaustov, G.V.; Kinson, J.B.; Kirk, A.; Kondashov, A.A.; Lednev, A.A.; Lenti, V.; Minashvili, I.; Peigneux, J.P.; Romanovsky, V.; Russakovich, N.; Semenov, A.; Shagin, P.M.; Shimizu, H.; Singovsky, A.V.; Sobol, A.; Stassinaki, M.; Stroot, J.P.; Takamatsu, K.; Tsuru, T.; Villalobos Baillie, O.; Votruba, M.F.; Yasu, Y.

    2000-01-01

    The reaction pp -> pf (omega omega) ps has been studied at 450 GeV/c and a spin analysis of the omega omega channel has been performed for the first time in central production. Evidence is found for the f2(1910) in the JPC = 2++ wave with spin projection JZ = 2. This is the only state observed in central production with spin projection JZ = 2. Its dPT and phi dependencies are similar to those observed for other glueball candidates. In addition, evidence is found for a state with JPC = 4++ consistent with the f4(2300). The f0(2000), previously observed in the rho rho final state, is confirmed.

  8. Pseudorapidity distributions of charged particles in d + Au and p + p collisions at √sNN = 200 GeV

    Science.gov (United States)

    Nouicer, Rachid; the PHOBOS Collaboration; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L. H.; Wosiek, B.; Wozniak, K.; Wysłouch, B.; Zhang, J.

    2004-08-01

    The measured pseudorapidity distributions of primary charged particles are presented for d+Au and p+p collisions at {\\sqrt{sNN} = {200 GeV} } over a wide pseudorapidity range of |η|<= 5.4. The results for d+Au collisions are presented for minimum-bias events and as a function of collision centrality. The measurements for p+p collisions are shown for minimum-bias events. The ratio of the charged particle multiplicity in d+Au and p+A collisions relative to that for inelastic p+p collisions is found to depend only on langNpartrang, and it is remarkably independent of collision energy and system mass. The deuteron and gold fragmentation regions in d+Au collisions are in good agreement with proton nucleus data at lower energies.

  9. Study of D(1285) → K+K-π0 decay and D(1285)- and E(1420)-mesons production in exclusive reactions, induced by π-- and K--mesons at 32.5 GeV/c

    International Nuclear Information System (INIS)

    Bitukov, S.I.; Viktorov, V.A.; Golovkin, S.V.

    1985-01-01

    D(1285) and E(1420)-mesons production in charge-exchange reactions induced by π - and K - -mesons at 32.5 GeV/c has been studied. The measured cross sections allowed one to derive limitations for the mixing angle in the axial-vector meson nonet. This means that E(1420)-meson consists mainly of strange quarks. The invariant mass distribution for the kaon pair in D(1285) → K + K - π 0 decay with statistics by an order of magnitude higher than the available data was obtained. The differential spectrum dN/dmsub(Ksup(+)Ksub(-)) analysis carried out in the delta-dominance model shows that delta(980)-meson cannot be described as a Breit-Wigner resonance with small width. The effective width for delta-meson at the point of √s=1 GeV/c 2 GITAsub(delta) is greater than 180 MeV/c 2 . It points to a strong coupling of delta-meson to hadrons

  10. Analysis of the variability of human normal urine by 2D-GE reveals a "public" and a "private" proteome.

    Science.gov (United States)

    Molina, Laurence; Salvetat, Nicolas; Ameur, Randa Ben; Peres, Sabine; Sommerer, Nicolas; Jarraya, Fayçal; Ayadi, Hammadi; Molina, Franck; Granier, Claude

    2011-12-10

    The characterization of the normal urinary proteome is steadily progressing and represents a major interest in the assessment of clinical urinary biomarkers. To estimate quantitatively the variability of the normal urinary proteome, urines of 20 healthy people were collected. We first evaluated the impact of the sample conservation temperature on urine proteome integrity. Keeping the urine sample at RT or at +4°C until storage at -80°C seems the best way for long-term storage of samples for 2D-GE analysis. The quantitative variability of the normal urinary proteome was estimated on the 20 urines mapped by 2D-GE. The occurrence of the 910 identified spots was analysed throughout the gels and represented in a virtual 2D gel. Sixteen percent of the spots were found to occur in all samples and 23% occurred in at least 90% of urines. About 13% of the protein spots were present only in 10% or less of the samples, thus representing the most variable part of the normal urinary proteome. Twenty proteins corresponding to a fraction of the fully conserved spots were identified by mass spectrometry. In conclusion, a "public" urinary proteome, common to healthy individuals, seems to coexist with a "private" urinary proteome, which is more specific to each individual. Copyright © 2011 Elsevier B.V. All rights reserved.

  11. Tensor and vector analysing powers A{sub yy} and A{sub y} in the {sup 12}C(d, p)X and {sup 12}C(d, d)X reactions at initial deuteron momentum of 9 GeV/c and emission angle of 85 mrad

    Energy Technology Data Exchange (ETDEWEB)

    Afanas` ev, S V; Arkhipov, V V; Azhgirej, L S [Joint Institute for Nuclear Research, Dubna (Russian Federation); and others

    1998-12-01

    The first data on tensor and vector analysing powers A{sub yy} and A{sub y} in the {sup 12}C(d, p)X and {sup 12}C(d, d)X reactions have been obtained at incident deuteron momentum of 9 GeV/c and emission angle for the secondary particles of 85 mrad. The value of A{sub yy} in inclusive deuteron breakup remains positive at the highest measured momentum of proton, that is in contradiction with the predictions of the model using conventional deuteron wave functions. The values of A{sub y} in this reaction are small but non-negligible. The data on A{sub yy} and A{sub y} in deuteron inelastic scattering could bring new important information on the baryonic resonance properties in the vicinity of masses {approx}2.2 GeV/c{sup 2} 34 refs., 24 figs., 9 tabs.

  12. Measurements of mass-dependent azimuthal anisotropy in central p + Au, d + Au, and 3He + Au collisions at √{sN N}=200 GeV

    Science.gov (United States)

    Adare, A.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Alfred, M.; Andrieux, V.; Apadula, N.; Asano, H.; Azmoun, B.; Babintsev, V.; Bagoly, A.; Bai, M.; Bandara, N. S.; Bannier, B.; Barish, K. N.; Bathe, S.; Bazilevsky, A.; Beaumier, M.; Beckman, S.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Blau, D. S.; Boer, M.; Bok, J. S.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Bumazhnov, V.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Chujo, T.; Citron, Z.; Connors, M.; Cronin, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Datta, A.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dion, A.; Diss, P. B.; Dixit, D.; Do, J. H.; Drees, A.; Drees, K. A.; Durham, J. M.; Durum, A.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukuda, Y.; Gal, C.; Gallus, P.; Garg, P.; Ge, H.; Giordano, F.; Glenn, A.; Goto, Y.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; Hashimoto, K.; He, X.; Hemmick, T. K.; Hill, J. C.; Hill, K.; Hodges, A.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Imai, K.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ivanishchev, D.; Jacak, B. V.; Jezghani, M.; Ji, Z.; Jia, J.; Jiang, X.; Johnson, B. M.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kanda, S.; Kang, J. H.; Kapukchyan, D.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Key, J. A.; Khachatryan, V.; Khanzadeev, A.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, G. W.; Kim, M.; Kim, M. H.; Kimelman, B.; Kincses, D.; Kistenev, E.; Kitamura, R.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Komkov, B.; Kotov, D.; Kudo, S.; Kurgyis, B.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Lacey, R.; Lajoie, J. G.; Lebedev, A.; Lee, S.; Lee, S. H.; Leitch, M. J.; Leung, Y. H.; Lewis, N. A.; Li, X.; Li, X.; Lim, S. H.; Liu, M. X.; Loggins, V.-R.; Lökös, S.; Lovasz, K.; Lynch, D.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Manion, A.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Meles, A.; Mendoza, M.; Metzger, W. J.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagai, K.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakano, K.; Nattrass, C.; Netrakanti, P. K.; Niida, T.; Nishimura, S.; Nouicer, R.; Novák, T.; Novitzky, N.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, J. S.; Park, S.; Pate, S. F.; Patel, M.; Peng, J.-C.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pinson, R.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Radzevich, P. V.; Rak, J.; Ramson, B. J.; Ravinovich, I.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Rubin, J. G.; Runchey, J.; Safonov, A. S.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seidl, R.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Skoby, M. J.; Slunečka, M.; Snowball, M.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stepanov, M.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Sziklai, J.; Takeda, A.; Taketani, A.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Towell, C. L.; Towell, R.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vazquez-Carson, S.; Velkovska, J.; Virius, M.; Vrba, V.; Vukman, N.; Wang, X. R.; Wang, Z.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; White, A. S.; Wong, C. P.; Woody, C. L.; Wysocki, M.; Xia, B.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yoo, J. H.; Yoon, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zhou, S.; Zou, L.; Phenix Collaboration

    2018-06-01

    We present measurements of the transverse-momentum dependence of elliptic flow v2 for identified pions and (anti)protons at midrapidity (|η |<0.35 ), in 0%-5% central p +Au and 3He+Au collisions at √{sNN}=200 GeV. When taken together with previously published measurements in d +Au collisions at √{sNN}=200 GeV, the results cover a broad range of small-collision-system multiplicities and intrinsic initial geometries. We observe a clear mass-dependent splitting of v2(pT) in d +Au and 3He+Au collisions, just as in large nucleus-nucleus (A +A ) collisions, and a smaller splitting in p +Au collisions. Both hydrodynamic and transport model calculations successfully describe the data at low pT (<1.5 GeV /c ), but fail to describe various features at higher pT. In all systems, the v2 values follow an approximate quark-number scaling as a function of the hadron transverse kinetic energy per constituent quark (K ET/nq ), which was also seen previously in A +A collisions.

  13. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

    Science.gov (United States)

    Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

    2018-05-01

    We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

  14. Ge/SiGe superlattices for nanostructured thermoelectric modules

    International Nuclear Information System (INIS)

    Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

    2013-01-01

    Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

  15. Polarized beam asymmetry for. gamma. d. -->. Peta in the energy range 0. 4-0. 8 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Adamyan, F.V.; Arustamyan, G.V.; Galumyan, P.I.; Grabsky, V.H.; Hakopyan, H.H.; Karapetyan, V.V.; Vartapetyan, H.A.

    1983-01-01

    Measurements of the polarized beam asymmetry for deuteron photodisintegration ..gamma..d ..-->.. Peta have been carried out in the energy range E/sub ..gamma../ = 0.4-0.8 GeV and at angles theta/sub p//sup cm/ = 45/sup 0/-75/sup 0/. The results obtained are in disagreement with theoretical predictions which take into account the dibaryon resonance contribution. The data qualitative analysis indicates the weakness of isoscalar dibaryon amplitudes near E/sub ..gamma../ = 400 MeV. 8 references, 1 figure.

  16. Centrality dependence of charged hadron transverse momentum spectra in d+Au collisions at $\\sqrt{s_{NN}}$ = 200 GeV

    CERN Document Server

    Back, B B; Ballintijn, M; Barton, D S; Becker, B; Betts, R R; Bickley, A A; Bindel, R; Budzanowski, A; Busza, W; Carroll, A; Decowski, M P; García, E; Gburek, T; George, N; Gulbrandsen, K H; Gushue, S; Halliwell, C; Hamblen, J; Harrington, A S; Henderson, C; Hofman, D J; Hollis, R S; Holynski, R; Holzman, B; Iordanova, A; Johnson, E; Kane, J L; Khan, N; Kulinich, P A; Kuo, C M; Lee, J W; Lin, W T; Manly, S; Mignerey, A C; Nöll, A; Nouicer, R; Olszewski, A; Pak, R; Park, I C; Pernegger, H; Reed, C; Remsberg, L P; Roland, C; Roland, G; Sagerer, J; Sarin, P; Sawicki, P; Sedykh, I; Skulski, W; Smith, C E; Steinberg, P; Stephans, G S F; Sukhanov, A; Teng, R; Tonjes, M B; Trzupek, A; Vale, C; van Nieuwenhuizen, G J; Verdier, R; Veres, G I; Wadsworth, B; Wolfs, F L H; Wosiek, B; Wozniak, K; Wuosmaa, A H; Wyslouch, B; Zhang, J

    2003-01-01

    We have measured transverse momentum distributions of charged hadrons produced in d+Au collisions at sqrt(s_NN) = 200 GeV. The spectra were obtained for transverse momenta 0.25 < p_T < 6.0 GeV/c, in a pseudorapidity range of 0.2 < eta < 1.4 in the deuteron direction. The evolution of the spectra with collision centrality is presented in comparison to p+pbarcollisions at the same collision energy. With increasing centrality, the yield at high transverse momenta increases more rapidly than the overall particle density, leading to a strong modification of the spectral shape. This change in spectral shape is qualitatively different from observations in Au+Au collisions at the same energy. The results provide important information for discriminating between different models for the suppression of high-p_T hadrons observed in Au+Au collisions.

  17. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

    Science.gov (United States)

    Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

    2017-12-01

    Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

  18. The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs

    Energy Technology Data Exchange (ETDEWEB)

    Liao, M.-H., E-mail: mhliaoa@ntu.edu.tw; Chen, P.-G. [Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2015-08-17

    The capping stressed SiN film is one of the most important process steps for the dislocation stress memorization technique (D-SMT), which has been used widely in the current industry, for the electron mobility booster in the n-type transistor beyond the 32/28 nm technology node. In this work, we found that the different stress-level SiN capping films influence the crystal re-growth velocities along different directions including [100] and [110] directions in Ge a lot. It can be further used to optimize the dislocation angle in the transistor during the D-SMT process and then results in the largest channel stress distribution to boost the device performance in the Ge n-FinFETs. Based on the theoretical calculation and experimental demonstration, it shows that the Ge three dimensional (3D) n-FinFETs device performance is improved ∼55% with the usage of +3 GPa tensile stressed SiN capping film. The channel stress and dislocation angle is ∼2.5 GPa and 30°, measured by the atomic force microscope-Raman technique and transmission electron microscopy, respectively.

  19. Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

    International Nuclear Information System (INIS)

    Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

    2008-01-01

    Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

  20. Structure of 78Ge from the 76Ge(t,p)78Ge reaction

    International Nuclear Information System (INIS)

    Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

    1978-01-01

    The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell

  1. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

    Science.gov (United States)

    Yuryev, Vladimir A; Arapkina, Larisa V; Storozhevykh, Mikhail S; Chapnin, Valery A; Chizh, Kirill V; Uvarov, Oleg V; Kalinushkin, Victor P; Zhukova, Elena S; Prokhorov, Anatoly S; Spektor, Igor E; Gorshunov, Boris P

    2012-07-23

    : Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their 'condensation' fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films.Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed.By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk

  2. Ge{sub 1−x}Si{sub x} on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang-Chun, E-mail: changchunlee@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Hsieh, Chia-Ping [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China); Huang, Pei-Chen; Cheng, Sen-Wen [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Liao, Ming-Han [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China)

    2016-03-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge{sub 1−x}Si{sub x} alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge{sub 1−x}Si{sub x} alloys, namely, Ge{sub 0.96}Si{sub 0.04}, Ge{sub 0.93}Si{sub 0.07}, and Ge{sub 0.86}Si{sub 0.14}, are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge{sub 1−x}Si{sub x} alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge{sub 0.86}Si{sub 0.14} stressor within the device channel. Furthermore, the stresses (S{sub yy}) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge{sub 1−x}Si{sub x} alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n

  3. Shaping Ge islands on Si(001) surfaces with misorientation angle.

    Science.gov (United States)

    Persichetti, L; Sgarlata, A; Fanfoni, M; Balzarotti, A

    2010-01-22

    A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0 degrees -8 degrees is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microscopy investigation we are able to explain the competition between step-flow growth and 2D nucleation and the progressive elongation of the 3D islands along the miscut direction [110]. Using finite element calculations, we find a strict correlation between the morphological evolution and the energetic factors which govern the {105} faceting at atomic scale.

  4. Image Quality Assessment of 2D versus 3D T2WI and Evaluation of Ultra-high b-Value (b=2,000 mm/s2) DWI for Response Assessment in Rectal Cancer.

    Science.gov (United States)

    Hausmann, Daniel; Liu, Jing; Budjan, Johannes; Reichert, Miriam; Ong, Melissa; Meyer, Mathias; Smakic, Arman; Grimm, Robert; Strecker, Ralph; Schoenberg, Stefan O; Wang, Xiaoying; Attenberger, Ulrike I

    2018-02-01

    The purpose of this IRB-approved, retrospective study was to compare image quality between 2D and high-resolution 3D, T2-weighted (T2WI) magnetic resonance imaging (MRI) sequences and to investigate the additional value of ultra-high b-value diffusion-weighted imaging (DWI; b=2,000 mm/s 2 ) for both rectal cancer staging and evaluating treatment response. From 12 February to 24 August 2016, 26 consecutive patients (22 males, four females; mean age: 61.9±14.0 years) with histologically-proven rectal cancer. In total 31 examinations [12 prior to and 19 after chemoradiation (CRT)] were included. The patients underwent pelvic MRI on a 3.0-T scanner (Magnetom Skyra, Erlangen, Germany). Three radiologists (3, 4, and 5 years of experience in MRI, respectively) independently assessed all images and rated the image quality of DWI (b=800 mm/s 2 ), apparent diffusion coefficient map, DWI (b=2,000 mm/s 2 ), 3D sagittal T2WI, 3D axial T2WI, 2D sagittal T2WI, and 2D axial T2WI of each patient, respectively. In addition, signal intensity ratios (SIR) were calculated between rectal cancer and obturator internus muscle (background) in all patients after CRT on DWI (b=2,000 mm/s 2 ) and correlated with histopathological regression grade (RG). Tumor delineation was significantly better by 2D T2WI than 3D T2WI both before and after CRT (before CRT: Z=-3.2, p=0.02; after CRT: Z=-4.408, p3D sagittal: 4.00±0.48; 2D sagittal: 4.03±0.34, p=0.713; 3D axial: 3.85±0.61, 2D axial: 3.78±0.64, p=0.537). Independent t-test showed significantly higher SIR between those with RG 1 or 2 (moderate response: mean score=2.02) and those with RG 3+4 (good response: mean score=0.8) (t=3.044, p=0.011). In those with RG 4 (complete response), SIR of b2000 was 0.946 compared to a 1.41 average of the whole cohort. In two patients, tumor was invisible on b2000 following CRT (RG 3 and 4, respectively). Interobserver agreement was mostly good (κ≥0.6) regarding image quality assessment, except for poor

  5. Structural, electronic and optical characteristics of SrGe{sub 2} and BaGe{sub 2}: A combined experimental and computational study

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

    2015-05-05

    Highlights: • Charge transfer between cation and anion atoms observed first time in digermandies. • Study yields a band gap of ∼1 eV and ∼0.85 eV for SrGe{sub 2} and BaGe{sub 2}, respectively. • Band gap decrease with the application of hydrostatic pressure. • Localized cation d states lead to a large absorption coefficient (>7.5 × 10{sup 4} cm{sup −1}). - Abstract: SrGe{sub 2} and BaGe{sub 2} were characterized for structural, electronic and optical properties by means of diffuse reflectance and first-principles density functional theory. These two germanides crystallize in the BaSi{sub 2}-type structure, in which Ge atoms are arranged in tetrahedral configuration. The calculation indicates a charge transfer from Sr (or Ba) atoms to Ge atoms along with the formation of covalent bonds among Ge atoms in Ge tetrahedral. The computational results confirm that these two germanies are Zintl phase described as Sr{sub 2}Ge{sub 4} (or Ba{sub 2}Ge{sub 4}), which are characterized by positively charged [Sr{sub 2} (or Ba{sub 2})]{sup 2.59+} and negatively charged [Ge{sub 4}]{sup 2.59−} units acting as cation and anion, respectively. These compounds are indirect gap semiconductors with band gap estimated to be E{sub g} = 1.02 eV for BaGe{sub 2} and E{sub g} = 0.89 eV for SrGe{sub 2} which are in good agreement with our experimental measured values (E{sub g} = 0.97 eV for BaGe{sub 2} and E{sub g} = 0.82 eV for SrGe{sub 2}). Our calculations demonstrate that the band gaps are narrowed by application of hydrostatic pressure; the pressure coefficients are estimated to be −10.54 for SrGe{sub 2} and −10.06 meV/GPa for BaGe{sub 2}. Optical properties reveal that these compounds have large absorption coefficient (∼7.5 × 10{sup 4} cm{sup −1} at 1.5 eV) and the estimated high frequency (static) dielectric constant are, ε{sub ∞}(ε{sub 0}) ≈ 12.8(20.97) for BaGe{sub 2} and ε{sub ∞}(ε{sub 0}) ≈ 14.27(22.87) for SrGe{sub 2}.

  6. MANAGEMENT BOARD MEETING OF 28 SEPTEMBER 2000

    CERN Multimedia

    2000-01-01

    LEP running The Director-General announced that on 14 September, in accordance with a recommendation by the CERN Research Board on the proposal of the LEP Experiments Committee, he had taken the decision to extend the LEP experimental run until 2 November 2000 following the appearance of events in late August hinting at a new state at a mass of about 114 GeV (see report in Weekly Bulletin No. 39/2000 for details). He explained that, while the extra month’s running would mean postponing the start-up of LEP dismantling to 6 November, it should not have an impact on the LHC completion date, and that the associated costs, amounting to some 8 MCHF including electricity, would be covered inside the existing budget. The data collected during the extended period of operation would be presented to the LEP Experiments Committee on 3 November. S. Myers, Leader of SL Division, presented a brief status report on the performance of LEP in 2000, which had been very impressive. Some technical problems in recent days had cau...

  7. Oxygen transport and GeO2 stability during thermal oxidation of Ge

    Science.gov (United States)

    da Silva, S. R. M.; Rolim, G. K.; Soares, G. V.; Baumvol, I. J. R.; Krug, C.; Miotti, L.; Freire, F. L.; da Costa, M. E. H. M.; Radtke, C.

    2012-05-01

    Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption.

  8. Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Feng Song; Gao Yong; Yang Yuan [Department of Electronic Engineering, Xi' an University of Technology, Xi' an 710048 (China); Feng Yuchun, E-mail: vonfs@yahoo.com.c [Key Laboratories of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen 518060 (China)

    2009-08-15

    The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structures of SiGe-OI rib optical waveguides are built and analyzed with Optiwave software, and the optical field and transmission losses of the SiGe-OI rib optical waveguides are analyzed. The optimization results show that when the structure parameters H, h, W are respectively 500 nm, 250 nm, 500 nm and the Ge content is 5%, the total power loss of SiGe-OI rib waveguides is 0.3683 dB/cm considering the loss of radiation outside the waveguides and materials, which is less than the traditional value of 0.5 dB/cm. The analytical technique for SiGe-OI optical waveguides and structure parameters computed by this paper are proved to be accurate and computationally efficient compared with the beam propagation method (BPM) and the experimental results. (semiconductor devices)

  9. Proton spectra from 6.3 GeV/c deuteron break-up on H, D, C, Al and Bi nuclei

    International Nuclear Information System (INIS)

    Azhgirey, L.S.; Ignatenko, M.A.; Ivanov, V.V.; Kuznetsov, A.S.; Mescheryakov, M.G.; Razin, S.V.; Stoletov, G.D.; Vzorov, I.K.; Zhmyrov, V.N.

    1977-01-01

    The proton spectra from deuteron break-up on H, D, 12 C, 27 Al and 209 Bi nuclei were measured at an angle of 103 mrad (lab. system) in the momentum interval from 2.6 to 3.6 GeV/c. The measurements were made at the JINR synchrophasotron by one-arm magnetic spectrometer on-line with a computer. The extracted 6.3 GeV/c deuteron beam was incident on targets of CH 2 , CD 2 , C, Al and Bi at the thickness from 0.8 to 2 g/cm 2 . The flux of deuteron beam was equal to 5x10 8 -5x10 9 particles/pulse with a typical pulse length of 300 ms. The repetition rate was one pulse every 10 s. Proton peaks with the maximum at about 3.1 GeV/c and 280-300 MeV/c FWHM dominate in all the measured spectra. Experimental proton spectra are compared with calculations with the Reid, the Moravcsik Gartenhaus, the Hulten and the Gauss wave functions. The results, on the whole, are reasonably reproduced in the framework of the Glauber multiple scattering model taking into account the relativistic deformation of the deuteron wave function

  10. Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe4

    International Nuclear Information System (INIS)

    Prokofieva, Violetta K.; Pavlova, Lydia M.

    2014-01-01

    Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe 4 grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe 4 grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe 4 crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition

  11. Uniaxially stressed Ge:Ga and Ge:Be

    Energy Technology Data Exchange (ETDEWEB)

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1992-12-01

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  12. Annual review 2000-2001; Rapport d'activite 2000-2001

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-07-01

    This report reviews the activities of the LAPP (particle physics laboratory of Annecy-le-Vieux) for the years 2000-2001. The central themes of research are: 1) the standard model and its extension, 2) the study of CP violation (contribution to the experiments BABAR and LHCb), 3) the search for the Higgs'boson (contribution to the experiments ALEPH, L3, ATLAS and CMS), 4) physics of neutrinos (contribution to the experiments NOMAD and OPERA), 5) the study of anti-matter and cosmic radiation (contribution to the experiment AMS and to the project EUSO embarked on the international spatial station), and 6) the search for gravitational waves (contribution to the experiment VIRGO)

  13. Preliminary Physics Summary: Measurement of D$^0$, D$^+$, D$^{*+}$ and D$_{\\rm s}^+$ production in pp collisions at $\\sqrt{s}= 5.02$ TeV with ALICE

    CERN Document Server

    2018-01-01

    The preliminary measurement of the production of prompt D$^0$, D$^+$, D$^{*+}$ and D$_{\\rm s}^+$ mesons in proton-proton collisions at $\\sqrt{s}= 5.02$ TeV with the ALICE detector at the LHC is reported. D mesons were reconstructed at mid-rapidity via their hadronic decay channels ${\\rm D}^0\\rightarrow {\\rm K}^-\\pi^+$, ${\\rm D}^+\\rightarrow {\\rm K}^-\\pi^+\\pi^+$, ${\\rm D}^{*+}\\rightarrow {\\rm D}^0\\pi^+$, ${\\rm D}_s^+\\rightarrow \\phi\\pi^+\\rightarrow {\\rm K}^+{\\rm K}^-\\pi^+$, and their charge conjugates. The production cross sections were measured in the transverse momentum interval $0< p_{\\rm T} <36$ GeV/$c$ for D$^0$, $1< p_{\\rm T} <36$ GeV/$c$ for D$^+$ and D$^{*+}$ and in $2 < p_{\\rm T} < 16$ GeV/$c$ for D$_{\\rm s}^+$ mesons. The measured $p_{\\rm T}$-differential cross sections are compared to the results at $\\sqrt{s} = 7$ TeV and to perturbative QCD calculations.

  14. Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates.

    Science.gov (United States)

    Lukosius, M; Dabrowski, J; Kitzmann, J; Fursenko, O; Akhtar, F; Lisker, M; Lippert, G; Schulze, S; Yamamoto, Y; Schubert, M A; Krause, H M; Wolff, A; Mai, A; Schroeder, T; Lupina, G

    2016-12-14

    Good quality, complementary-metal-oxide-semiconductor (CMOS) technology compatible, 200 mm graphene was obtained on Ge(001)/Si(001) wafers in this work. Chemical vapor depositions were carried out at the deposition temperatures of 885 °C using CH 4 as carbon source on epitaxial Ge(100) layers, which were grown on Si(100), prior to the graphene synthesis. Graphene layer with the 2D/G ratio ∼3 and low D mode (i.e., low concentration of defects) was measured over the entire 200 mm wafer by Raman spectroscopy. A typical full-width-at-half-maximum value of 39 cm -1 was extracted for the 2D mode, further indicating that graphene of good structural quality was produced. The study also revealed that the lack of interfacial oxide correlates with superior properties of graphene. In order to evaluate electrical properties of graphene, its 2 × 2 cm 2 pieces were transferred onto SiO 2 /Si substrates from Ge/Si wafers. The extracted sheet resistance and mobility values of transferred graphene layers were ∼1500 ± 100 Ω/sq and μ ≈ 400 ± 20 cm 2 /V s, respectively. The transferred graphene was free of metallic contaminations or mechanical damage. On the basis of results of DFT calculations, we attribute the high structural quality of graphene grown by CVD on Ge to hydrogen-induced reduction of nucleation probability, explain the appearance of graphene-induced facets on Ge(001) as a kinetic effect caused by surface step pinning at linear graphene nuclei, and clarify the orientation of graphene domains on Ge(001) as resulting from good lattice matching between Ge(001) and graphene nucleated on such nuclei.

  15. Charm quark pair correlations with D{sup *}-muon tag at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Gladkov, D.

    2007-07-15

    This thesis presents a measurement of double-tagged charm quark pair production via the process ep{yields}e' ccX{yields}e' D*{mu}X' in lepton-proton collisions at HERA, using an integrated luminosity of 114 pb{sup -1} gated by the ZEUS detector in the years 1996-2000. Since the charm quark mass provides a large enough energy scale, the perturbative Quantum Chromo-Dynamics approach can be used to calculate the cross section for charm D*-muon pairs. Using the D*-muon pair to tag the charm quark pair, the measurement is sensitive not only to properties of the leading order hard scattering process but also to the hadronisation and the parton density in the proton as well as higher order effects. Employing the angular and charge correlations between the D* meson and the muon, the fraction of charm events is extracted from the data. Cross sections for charm D*-muon pair production in the visible range of the D* transverse momentum p{sub T}{sup D*}>1.5 GeV, the D* pseudorapidity vertical stroke {eta}{sup D*} vertical stroke <1.5, the muon transverse momentum p{sub T}{sup {mu}}>1.0 GeV and the muon pseudorapidity vertical stroke {eta}{sup {mu}} vertical stroke <2.2 are measured for the inclusive, photoproduction (inelasticity 0.05GeV{sup 2}) and deep inelastic scattering (y<0.65 at Q{sup 2}>2 GeV{sup 2}) regimes. For the inclusive and photoproduction regimes differential cross sections in various kinematic variables of the D*-muon pair are measured as well. The differential cross sections for the inclusive regime are compared to the leading order plus parton shower MC approach, while the differential cross sections for the photoproduction regime are compared to next-to leading order calculations. The momentum fraction carried by the gluon in the proton is also measured. The possibility of extending the Global Track Trigger of the ZEUS DAQ/trigger system with a forward trigger algorithm is the technical task of this thesis. A forward

  16. Long-range pseudorapidity dihadron correlations in d + Au collisions at √{sNN} = 200 GeV

    Science.gov (United States)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Alford, J.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Averichev, G. S.; Banerjee, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandin, A. V.; Bunzarov, I.; Burton, T. P.; Butterworth, J.; Caines, H.; Calder'on de la Barca S'anchez, M.; Campbell, J. M.; Cebra, D.; Cervantes, M. C.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chattopadhyay, S.; Chen, J. H.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Codrington, M. J. M.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; di Ruzza, B.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Engelage, J.; Eppley, G.; Esha, R.; Evdokimov, O.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Fedorisin, J.; Feng; Filip, P.; Fisyak, Y.; Flores, C. E.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, S.; Gupta, A.; Guryn, W.; Hamad, A.; Hamed, A.; Haque, R.; Harris, J. W.; He, L.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Hofman, D. J.; Horvat, S.; Huang, H. Z.; Huang, X.; Huang, B.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jang, H.; Jiang, K.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z. H.; Kikola, D. P.; Kisel, I.; Kisiel, A.; Koetke, D. D.; Kollegger, T.; Kosarzewski, L. K.; Kotchenda, L.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kulakov, I.; Kumar, L.; Kycia, R. A.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, X.; Li, X.; Li, W.; Li, Z. M.; Li, Y.; Li, C.; Lisa, M. A.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Ma, L.; Ma, R.; Ma, G. L.; Ma, Y. G.; Magdy, N.; Majka, R.; Manion, A.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; McDonald, D.; Meehan, K.; Minaev, N. G.; Mioduszewski, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nandi, B. K.; Nasim, Md.; Nayak, T. K.; Nigmatkulov, G.; Nogach, L. V.; Noh, S. Y.; Novak, J.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V.; Olvitt, D. L.; Page, B. S.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Pawlik, B.; Pei, H.; Perkins, C.; Peterson, A.; Pile, P.; Planinic, M.; Pluta, J.; Poljak, N.; Poniatowska, K.; Porter, J.; Posik, M.; Poskanzer, A. M.; Pruthi, N. K.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roy, A.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandacz, A.; Sandweiss, J.; Sarkar, A.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Seger, J.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, M. K.; Sharma, B.; Shen, W. Q.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solanki, D.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Sumbera, M.; Summa, B. J.; Sun, Y.; Sun, Z.; Sun, X. M.; Sun, X.; Surrow, B.; Svirida, D. N.; Szelezniak, M. A.; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarnowsky, T.; Tawfik, A. N.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vandenbroucke, M.; Varma, R.; Vasiliev, A. N.; Vertesi, R.; Videbaek, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, Y.; Wang, F.; Wang, H.; Wang, J. S.; Wang, G.; Wang, Y.; Webb, J. C.; Webb, G.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y. F.; Xiao, Z.; Xie, W.; Xin, K.; Xu, Z.; Xu, Q. H.; Xu, N.; Xu, H.; Xu, Y. F.; Yang, Y.; Yang, C.; Yang, S.; Yang, Q.; Yang, Y.; Ye, Z.; Yepes, P.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, J. B.; Zhang, X. P.; Zhang, S.; Zhang, J.; Zhang, Z.; Zhang, Y.; Zhang, J. L.; Zhao, F.; Zhao, J.; Zhong, C.; Zhou, L.; Zhu, X.; Zoulkarneeva, Y.; Zyzak, M.

    2015-07-01

    Dihadron angular correlations in d +Au collisions at √{sNN} = 200 GeV are reported as a function of the measured zero-degree calorimeter neutral energy and the forward charged hadron multiplicity in the Au-beam direction. A finite correlated yield is observed at large relative pseudorapidity (Δη) on the near side (i.e. relative azimuth Δϕ ∼ 0). This correlated yield as a function of Δη appears to scale with the dominant, primarily jet-related, away-side (Δϕ ∼ π) yield. The Fourier coefficients of the Δϕ correlation, Vn = , have a strong Δη dependence. In addition, it is found that V1 is approximately inversely proportional to the mid-rapidity event multiplicity, while V2 is independent of it with similar magnitude in the forward (d-going) and backward (Au-going) directions.

  17. Forward neutral pion production in p + p and d + Au collisions at square root sNN=200 GeV.

    Science.gov (United States)

    Adams, J; Aggarwal, M M; Ahammed, Z; Amonett, J; Anderson, B D; Arkhipkin, D; Averichev, G S; Badyal, S K; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellingeri-Laurikainen, A; Bellwied, R; Berger, J; Bezverkhny, B I; Bharadwaj, S; Bhasin, A; Bhati, A K; Bhatia, V S; Bichsel, H; Bielcik, J; Bielcikova, J; Billmeier, A; Bland, L C; Blyth, C O; Blyth, S-L; Bonner, B E; Botje, M; Boucham, A; Bouchet, J; Brandin, A V; Bravar, A; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Sánchez, M Calderón de la Barca; Catu, O; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopadhyay, S; Chen, H F; Chen, J H; Chen, Y; Cheng, J; Cherney, M; Chikanian, A; Choi, H A; Christie, W; Coffin, J P; Cormier, T M; Cosentino, M R; Cramer, J G; Crawford, H J; Das, D; Das, S; Daugherity, M; de Moura, M M; Dedovich, T G; Dephillips, M; Derevschikov, A A; Didenko, L; Dietel, T; Dogra, S M; Dong, W J; Dong, X; Draper, J E; Du, F; Dubey, A K; Dunin, V B; Dunlop, J C; Mazumdar, M R Dutta; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Faivre, J; Fatemi, R; Fedorisin, J; Filimonov, K; Filip, P; Finch, E; Fine, V; Fisyak, Y; Fornazier, K S F; Fox, B D; Fu, J; Gagliardi, C A; Gaillard, L; Gans, J; Ganti, M S; Geurts, F; Ghazikhanian, V; Ghosh, P; Gonzalez, J E; Gorbunov, Y G; Gos, H; Grachov, O; Grebenyuk, O; Grosnick, D; Guertin, S M; Guo, Y; Gupta, A; Gupta, N; Gutierrez, T D; Hallman, T J; Hamed, A; Harris, J W; Heinz, M; Henry, T W; Hepplemann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffmann, G W; Horner, M J; Huang, H Z; Huang, S L; Hughes, E W; Humanic, T J; Igo, G; Ishihara, A; Jacobs, P; Jacobs, W W; Jiang, H; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kaplan, M; Keane, D; Kechechyan, A; Khodyrev, V Yu; Kim, B C; Kiryluk, J; Kisiel, A; Kislov, E M; Klein, S R; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kowalik, K L; Kramer, M; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kutuev, R Kh; Kuznetsov, A A; Lamb, R; Lamont, M A C; Landgraf, J M; Lange, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lee, C-H; Lehocka, S; Levine, M J; Li, C; Li, Q; Li, Y; Lin, G; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, H; Liu, J; Liu, L; Liu, Q J; Liu, Z; Ljubicic, T; Llope, W J; Long, H; Longacre, R S; Lopez-Noriega, M; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahajan, S; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Marx, J N; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Melnick, Yu; Meschanin, A; Miller, M L; Minaev, N G; Mironov, C; Mischke, A; Mishra, D K; Mitchell, J; Mioduszewski, S; Mohanty, B; Molnar, L; Moore, C F; Morozov, D A; Munhoz, M G; Nandi, B K; Nayak, S K; Nayak, T K; Nelson, J M; Netrakanti, P K; Nikitin, V A; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pal, S K; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Petrov, V A; Phatak, S C; Picha, R; Planinic, M; Pluta, J; Porile, N; Porter, J; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Rakness, G; Raniwala, R; Raniwala, S; Ravel, O; Ray, R L; Razin, S V; Reichhold, D; Reid, J G; Reinnarth, J; Renault, G; Retiere, F; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Russcher, M J; Sahoo, R; Sakrejda, I; Salur, S; Sandweiss, J; Sarsour, M; Savin, I; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Schweda, K; Seger, J; Selyuzhenkov, I; Seyboth, P; Shabetai, A; Shahaliev, E; Shao, M; Shao, W; Sharma, M; Shen, W Q; Shestermanov, K E; Shimanskiy, S S; Sichtermann, E; Simon, F; Singaraju, R N; Smirnov, N; Snellings, R; Sood, G; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Suaide, A A P; Sugarbaker, E; Sumbera, M; Surrow, B; Swanger, M; Symons, T J M; de Toledo, A Szanto; Tai, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thein, D; Thomas, J H; Timmins, A R; Timoshenko, S; Tokarev, M; Trainor, T A; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Buren, G Van; van der Kolk, N; van Leeuwen, M; Molen, A M Vander; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Waggoner, W T; Wang, F; Wang, G; Wang, G; Wang, X L; Wang, Y; Wang, Y; Wang, Z M; Ward, H; Watson, J W; Webb, J C; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wood, J; Wu, J; Xu, N; Xu, Q H; Xu, Z; Xu, Z Z; Yepes, P; Yoo, I-K; Yurevich, V I; Zborovsky, I; Zhang, H; Zhang, W M; Zhang, Y; Zhang, Z P; Zhong, C; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N; Zuo, J X

    2006-10-13

    Measurements of the production of forward pi0 mesons from p + p and d + Au collisions at square root sNN=200 GeV are reported. The p + p yield generally agrees with next-to-leading order perturbative QCD calculations. The d + Au yield per binary collision is suppressed as eta increases, decreasing to approximately 30% of the p + p yield at eta =4.00, well below shadowing expectations. Exploratory measurements of azimuthal correlations of the forward pi0 with charged hadrons at eta approximately 0 show a recoil peak in p + p that is suppressed in d + Au at low pion energy. These observations are qualitatively consistent with a saturation picture of the low-x gluon structure of heavy nuclei.

  18. Measurement of the Atmospheric Muon Spectrum from 20 to 3000 GeV

    CERN Document Server

    Achard, P; Aguilar-Benítez, M; Van den Ancker, M E; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alviggi, M G; Anderhub, H; Andreev, V P; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Bajo, A; Baksay, G; Baksay, L; Bähr, J; Baldew, S V; Banerjee, S; Banerjee, Sw; Barczyk, A; Barillère, R; Bartalini, P; Basile, M; Batalova, N; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bellucci, L; Berbeco, R; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biglietti, M; Biland, A; Blaising, J J; Blyth, S C; Bobbink, G J; Böhm, A; Boldizsar, L; Borgia, B; Bottai, S; Bourilkov, D; Bourquin, Maurice; Braccini, S; Branson, J G; Brochu, F; Burger, J D; Burger, W J; Cai, X D; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A; Casaus, J; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada, M; Chamizo-Llatas, M; Chiarusi, T; Chang, Y H; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chiefari, G; Cifarelli, Luisa; Cindolo, F; Clare, I; Clare, R; Coignet, G; Colino, N; Costantini, S; de la Cruz, B; Cucciarelli, S; van Dalen, J A; De Asmundis, R; Déglon, P L; Debreczeni, J; Degré, A; Dehmelt, K; Deiters, K; Della Volpe, D; Delmeire, E; Denes, P; De Notaristefani, F; De Salvo, A; Diemoz, M; Dierckxsens, M; Ding, L K; Dionisi, C; Dittmar, M; Doria, A; Dova, M T; Duchesneau, D; Duda, M; Durán, I; Echenard, B; Eline, A; El-Hage, A; El-Mamouni, H; Engler, A; Eppling, F J; Extermann, P; Faber, G; Falagán, M A; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, M; Ferguson, T; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, F; Fisher, W; Fisk, I; Forconi, G; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gataullin, M; Gentile, S; Giagu, S; Gong, Z F; Grabosch, H J; Grenier, G; Grimm, O; Groenstege, H L; Grünewald, M W; Guida, M; Guo, Y N; Gupta, S; Gupta, V K; Gurtu, A; Gutay, L J; Haas, D; Haller, C; Hatzifotiadou, D; Hayashi, Y; He, Z X; Hebbeker, T; Hervé, A; Hirschfelder, J; Hofer, H; Hoferjun, H; Hohlmann, M; Holzner, G; Hou, S R; Huo, A X; Hu, Y; Ito, N; Jin, B N; Jing, C L; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kantserov, V A; Kaur, M; Kawakami, S; Kienzle-Focacci, M N; Kim, J K; Kirkby, Jasper; Kittel, E W; Klimentov, A; König, A C; Kok, E; Korn, A J; Kopal, M; Koutsenko, V F; Kräber, M H; Kuang Hao Huai; Krämer, R W; Krüger, A; Kuijpers, J; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Lei, Y; Leich, H; Leiste, R; Levtchenko, M; Levchenko, P M; Li, C; Li, L; Li, Z C; Likhoded, S; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lü, Y S; Luci, C; Luminari, L; Lustermann, W; Ma Wen Gan; Ma, X H; Ma, Y Q; Malgeri, L; Malinin, A; Maña, C; Mans, J; Martin, J P; Marzano, F; Mazumdar, K; McNeil, R R; Mele, S; Meng, X W; Merola, L; Meschini, M; Metzger, W J; Mihul, A; Van Mil, A; Milcent, H; Mirabelli, G; Mnich, J; Mohanty, G B; Monteleoni, B; Muanza, G S; Muijs, A J M; Musicar, B; Musy, M; Nagy, S; Nahnhauer, R; Naumov, V A; Natale, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nisati, A; Novák, T; Nowak, H; Ofierzynski, R A; Organtini, G; Pal, I; Palomares, C; Paolucci, P; Paramatti, R; Parriaud, J F; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Pedace, M; Pensotti, S; Perret-Gallix, D; Petersen, B; Piccolo, D; Pierella, F; Pieri, M; Pioppi, M; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Pothier, J; Prokofev, D; Prokofiev, D O; Quartieri, J; Qing, C R; Rahal-Callot, G; Rahaman, M A; Raics, P; Raja, N; Ramelli, R; Rancoita, P G; Ranieri, R; Raspereza, A V; Ravindran, K C; Razis, P; Ren, D; Rescigno, M; Reucroft, S; Rewiersma, P A M; Riemann, S; Riles, K; Roe, B P; Rojkov, A; Romero, L; Rosca, A; Rosemann, C; Rosenbleck, C; Rosier-Lees, S; Roth, S; Rubio, J A; Ruggiero, G; Rykaczewski, H; Saidi, R; Sakharov, A; Saremi, S; Sarkar, S; Salicio, J; Sánchez, E; Schäfer, C; Shchegelskii, V; Schmitt, V; Schöneich, B; Schopper, Herwig Franz; Schotanus, D J; Sciacca, C; Servoli, L; Shen, C Q; Shevchenko, S; Shivarov, N; Shoutko, V; Shumilov, E; Shvorob, A V; Son, D; Souga, C; Spillantini, P; Steuer, M; Stickland, D P; Stoyanov, B; Strässner, A; Sudhakar, K; Sulanke, H; Sultanov, G G; Sun, L Z; Sushkov, S; Suter, H; Swain, J D; Szillási, Z; Tang, X W; Tarjan, P; Tauscher, L; Taylor, L; Tellili, B; Teyssier, D; Timmermans, C; Ting, Samuel C C; Ting, S M; Tonwar, S C; Tóth, J; Trowitzsch, G; Tully, C; Tung, K L; Ulbricht, J; Unger, M; Valente, E; Verkooijen, H; Van de Walle, R T; Vásquez, R; Veszpremi, V; Vesztergombi, G; Vetlitskii, I; Vicinanza, D; Viertel, Gert M; Villa, S; Vivargent, M; Vlachos, S; Vodopyanov, I; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Wadhwa, M; Wang, R G; Wang, Q; Wang, X L; Wang, X W; Wang, Z M; Weber, M; Van Wijk, R F; Wijnen, T A M; Wilkens, H; Wynhoff, S; Xia, L; Xu, Y P; Xu, J S; Xu, Z Z; Yamamoto, J; Yang, B Z; Yang, C G; Yang, H J; Yang, M; Yang, X F; Yao, Z G; Yeh, S C; Yu, Z Q; Zalite, A; Zalite, Yu; Zhang, C; Zhang, F; Zhang, J; Zhang, S; Zhang, Z P; Zhao, J; Zhou, S J; Zhu, G Y; Zhu, R Y; Zhuang, H L; Zhu, Q Q; Zichichi, A; Zimmermann, B; Zöller, M; Zwart, A N M

    2004-01-01

    The absolute muon flux between 20 GeV and 300 GeV is measured with the L3 magnetic muon spectrometer for zenith angles ranging from 0 degree to 58 degrees. Due to the large exposure of about 150 m2 sr d, and the excellent momentum resolution of the L3 muon chambers, a precision of 2.3% at 150 GeV in the vertical direction is achieved. The ratio of positive to negative muons is studied between 20 GeV and 500 GeV, and the average vertical muon charge ratio is found to be 1.285 +- 0.003 (stat.)+- 0.019 (syst.).

  19. Growth and evolution of nickel germanide nanostructures on Ge(001)

    International Nuclear Information System (INIS)

    Grzela, T; Capellini, G; Schubert, M A; Schroeder, T; Koczorowski, W; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J

    2015-01-01

    Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer–Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous Ni_xGe_y wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the Ni_xGe_y terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular Ni_xGe_y 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110). (paper)

  20. Reconstructed Jet Results in p + p, d + Au and Cu + Cu collisions at 200 GeV from PHENIX

    International Nuclear Information System (INIS)

    Perepelitsa, D.V.

    2013-01-01

    Jet reconstruction in heavy ion collisions at RHIC and the LHC is becoming a popular tool to explore medium effects including the energy loss and modified fragmentation of hard-scattered partons. In p + A and d + A collisions, reconstructed jets are important for evaluating cold nuclear matter effects such as the impact parameter dependence of nuclear parton distribution functions and initial state energy loss. We present current PHENIX results from p + p, d + Au, and Cu + Cu collisions at 200 GeV using the Gaussian filter and anti-k T algorithms. The systematic study of direct jet reconstruction across a variety of collisions systems at PHENIX will help to tell a coherent story of jet physics at RHIC

  1. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    International Nuclear Information System (INIS)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-01-01

    The stability of the crystalline phase of binary phase-change Ge x Sb 1-x films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T Ge p to the rate of change dT cryst /dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T cryst is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  2. Suppression of Back-to-Back Hadron Pairs at Forward Rapidity in d+Au Collisions at √(sNN)=200 GeV

    International Nuclear Information System (INIS)

    Adare, A.; Ellinghaus, F.; Kinney, E.; Linden Levy, L. A.; Nagle, J. L.; Rosen, C. A.; Seele, J.; Wysocki, M.; Afanasiev, S.; Isupov, A.; Litvinenko, A.; Malakhov, A.; Peresedov, V.; Rukoyatkin, P.; Zolin, L.; Aidala, C.; Datta, A.; Ajitanand, N. N.; Alexander, J.; Chung, P.

    2011-01-01

    Back-to-back hadron pair yields in d+Au and p+p collisions at √(s NN )=200 GeV were measured with the PHENIX detector at the Relativistic Heavy Ion Collider. Rapidity separated hadron pairs were detected with the trigger hadron at pseudorapidity |η| T , and η points to cold nuclear matter effects arising at high parton densities.

  3. Ge-Au eutectic bonding of Ge (100) single crystals

    International Nuclear Information System (INIS)

    Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

    1993-01-01

    The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

  4. Energy levels of germanium, Ge I through Ge XXXII

    International Nuclear Information System (INIS)

    Sugar, J.; Musgrove, A.

    1993-01-01

    Atomic energy levels of germanium have been compiled for all stages of ionization for which experimental data are available. No data have yet been published for Ge VIII through Ge XIII and Ge XXXII. Very accurate calculated values are compiled for Ge XXXI and XXXII. Experimental g-factors and leading percentages from calculated eigenvectors of levels are given. A value for the ionization energy, either experimental when available or theoretical, is included for the neutral atom and each ion. section

  5. A high linearity SiGe HBT LNA for GPS receiver

    International Nuclear Information System (INIS)

    Luo Yanbin; Shi Jian; Ma Chengyan; Gan Yebing; Qian Min

    2014-01-01

    A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560 μm 2 area and consumes 3.6 mA from a 2.85 V power supply. (semiconductor integrated circuits)

  6. Magnetic properties of ultrathin Co/Ge(111) and Co/Ge(100) films

    International Nuclear Information System (INIS)

    Cheng, W. C.; Tsay, J. S.; Yao, Y. D.; Lin, K. C.; Yang, C. S.; Lee, S. F.; Tseng, T. K.; Neih, H. Y.

    2001-01-01

    The orientation of the magnetization and the occurrence of interfacial ferromagnetic inactive layers for ultrathin Co films grown on Ge(111) and Ge(100) surfaces have been studied using the in situ surface magneto-optic Kerr effect. On a Ge(111) substrate, cobalt films (≤28 monolayers) with in-plane easy axis of magnetization have been observed; however, on a Ge(100) substrate, ultrathin Co films (14 - 16 monolayers) with canted out-of-plane easy axis of magnetization were measured. The ferromagnetic inactive layers were formed due to the intermixing of Co and Ge and lowering the Curie temperature by reducing Co film thickness. The Co - Ge compound inactive layers were 3.8 monolayers thick for Co films grown on Ge(111) and 6.2 monolayers thick for Co films deposited on Ge(100). This is attributed to the difference of the density of surface atoms on Ge(111) and Ge(100). [copyright] 2001 American Institute of Physics

  7. Annual report 2000

    International Nuclear Information System (INIS)

    2002-01-01

    This report presents the activities of the Cogema group, its reports on management and its financial situation for the year 2000: presentation of TOPCO, boards of directors, profile, main consolidated data, year 2000 highlights, group activities (mining-chemistry, enrichment, reprocessing-recycling, engineering, services, sustainable development, health and safety, quality policy, human resources, R and D, communication), organization chart of the consolidated Cogema group, financial statements, directory. (J.S.)

  8. Structural transition in Ge growth on Si mediated by sub-monolayer carbon

    International Nuclear Information System (INIS)

    Itoh, Yuhki; Hatakeyama, Shinji; Washio, Katsuyoshi

    2014-01-01

    Ge growth on Si mediated by sub-monolayer (ML) carbon (C) covered directly on Si surface was studied. C and Ge layers were grown on Si(100) substrates by using solid-source molecular beam epitaxy system. After Si surface cleaning by heating up to 900 °C, C up to 0.45 ML was deposited and then 10 to 15-nm-thick Ge were deposited. Reflection high energy electron diffraction patterns after sub-ML C deposition changed from streaks to halo depending on C coverage. The Ge dots were formed at low C coverage of 0.08–0.16 ML. Octagonal dots had three same facet planes of (001), (111), and (113) and consisted of the mixture of single crystals with dislocations along [111]. This is due to the event that the incorporation of small amount of C into Si surface gave rise to a strain. As a result, Si surface weaved Si(100) 2 × 1 with Si-C c(4 × 4) and Ge atoms adsorbed selectively on Si(100) 2 × 1 forming dome-shaped dots. A drastic structural transition from dots to films occurred at C coverage of 0.20 ML. The Ge films, consisting of relaxed poly- and amorphous-Ge, formed at C coverage of 0.20–0.45 ML. This is because a large amount of Si-C bonds induced strong compressive strain and surface roughening. In consequence, the growth mode changed from three-dimensional (3D) to 2D due to the reduction of Ge diffusion length. - Highlights: • Ge growth on Si mediated by sub-monolayer (ML) carbon (C) was studied. • Ge dots were formed at low C coverage of 0.08–0.16 ML. • Drastic structural transition from dots to films occurred at C coverage of 0.20 ML. • Ge films consisted of relaxed poly- and amorphous-Ge at C coverage of 0.20–0.45 ML

  9. Forward Λ production and nuclear stopping power in d+Au collisions at sNN=200 GeV

    Science.gov (United States)

    Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baudot, J.; Baumgart, S.; Belaga, V. V.; Bellingeri-Laurikainen, A.; Bellwied, R.; Benedosso, F.; Betts, R. R.; Bhardwaj, S.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Blyth, S.-L.; Bombara, M.; Bonner, B. E.; Botje, M.; Bouchet, J.; Brandin, A. V.; Bravar, A.; Burton, T. P.; Bystersky, M.; Cai, X. Z.; Caines, H.; Sánchez, M. Calderón De La Barca; Callner, J.; Catu, O.; Cebra, D.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Chung, S. U.; Clarke, R. F.; Codrington, M. J. M.; Coffin, J. P.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; Moura, M. M. De; Dedovich, T. G.; Dephillips, M.; Derevschikov, A. A.; Didenko, L.; Dietel, T.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, F.; Dunin, V. B.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Eckardt, V.; Edwards, W. R.; Efimov, L. G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fu, J.; Gagliardi, C. A.; Gaillard, L.; Ganti, M. S.; Garcia-Solis, E.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gos, H.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, N.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Henry, T. W.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Horner, M. J.; Huang, H. Z.; Hughes, E. W.; Humanic, T. J.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jia, F.; Jones, P. G.; Judd, E. G.; Kabana, S.; Kang, K.; Kapitan, J.; Kaplan, M.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E. M.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kouchpil, V.; Kowalik, K. L.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Kuhn, C.; Kulikov, A. I.; Kumar, A.; Kurnadi, P.; Kuznetsov, A. A.; Lamont, M. A. C.; Landgraf, J. M.; Lange, S.; Lapointe, S.; Laue, F.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C.-H.; Lehocka, S.; Levine, M. J.; Li, C.; Li, Q.; Li, Y.; Lin, G.; Lin, X.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ludlam, T.; Lynn, D.; Ma, G. L.; Ma, J. G.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Martin, L.; Matis, H. S.; Matulenko, Yu. A.; McClain, C. J.; McShane, T. S.; Melnick, Yu.; Meschanin, A.; Millane, J.; Miller, M. L.; Minaev, N. G.; Mioduszewski, S.; Mischke, A.; Mitchell, J.; Mohanty, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Nepali, C.; Netrakanti, P. K.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okorokov, V.; Oldenburg, M.; Olson, D.; Pachr, M.; Pal, S. K.; Panebratsev, Y.; Pavlinov, A. I.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Planinic, M.; Pluta, J.; Poljak, N.; Porile, N.; Poskanzer, A. M.; Potekhin, M.; Potrebenikova, E.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Putschke, J.; Qattan, I. A.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Relyea, D.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Sazhin, P. S.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shen, W. Q.; Shimanskiy, S. S.; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Smirnov, N.; Snellings, R.; Sorensen, P.; Sowinski, J.; Speltz, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, T. D. S.; Staszak, D.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Z.; Surrow, B.; Symons, T. J. M.; Toledo, A. Szanto De; Takahashi, J.; Tang, A. H.; Tarnowsky, T.; Thomas, J. H.; Timmins, A. R.; Timoshenko, S.; Tokarev, M.; Trainor, T. A.; Trentalange, S.; Tribble, R. E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Buren, G. Van; Kolk, N. Van Der; Leeuwen, M. Van; Molen, A. M. Vander; Varma, R.; Vasilevski, I. M.; Vasiliev, A. N.; Vernet, R.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Wada, M.; Waggoner, W. T.; Wang, F.; Wang, G.; Wang, J. S.; Wang, X. L.; Wang, Y.; Webb, J. C.; Westfall, G. D.; , C. Whitten, Jr.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, J.; Wu, Y.; Xu, N.; Xu, Q. H.; Xu, Z.; Yepes, P.; Yoo, I.-K.; Yue, Q.; Yurevich, V. I.; Zawisza, M.; Zhan, W.; Zhang, H.; Zhang, W. M.; Zhang, Y.; Zhang, Z. P.; Zhao, Y.; Zhong, C.; Zhou, J.; Zoulkarneev, R.; Zoulkarneeva, Y.; Zubarev, A. N.; Zuo, J. X.

    2007-12-01

    We report the measurement of Λ and Λ¯ yields and inverse slope parameters in d+Au collisions at sNN=200 GeV at forward and backward rapidities (y=±2.75), using data from the STAR forward time projection chambers. The contributions of different processes to baryon transport and particle production are probed exploiting the inherent asymmetry of the d+Au system. Comparisons to model calculations show that baryon transport on the deuteron side is consistent with multiple collisions of the deuteron nucleons with gold participants. On the gold side, HIJING-based models without a hadronic rescattering phase do not describe the measured particle yields, while models that include target remnants or hadronic rescattering do. The multichain model can provide a good description of the net baryon density in d+Au collisions at energies currently available at the BNL Relativistic Heavy Ion Collider, and the derived parameters of the model agree with those from nuclear collisions at lower energies.

  10. Charm quark pair correlations with D*-muon tag at HERA

    International Nuclear Information System (INIS)

    Gladkov, D.

    2007-07-01

    This thesis presents a measurement of double-tagged charm quark pair production via the process ep→e' ccX→e' D*μX' in lepton-proton collisions at HERA, using an integrated luminosity of 114 pb -1 gated by the ZEUS detector in the years 1996-2000. Since the charm quark mass provides a large enough energy scale, the perturbative Quantum Chromo-Dynamics approach can be used to calculate the cross section for charm D*-muon pairs. Using the D*-muon pair to tag the charm quark pair, the measurement is sensitive not only to properties of the leading order hard scattering process but also to the hadronisation and the parton density in the proton as well as higher order effects. Employing the angular and charge correlations between the D* meson and the muon, the fraction of charm events is extracted from the data. Cross sections for charm D*-muon pair production in the visible range of the D* transverse momentum p T D* >1.5 GeV, the D* pseudorapidity vertical stroke η D* vertical stroke T μ >1.0 GeV and the muon pseudorapidity vertical stroke η μ vertical stroke 2 2 ) and deep inelastic scattering (y 2 >2 GeV 2 ) regimes. For the inclusive and photoproduction regimes differential cross sections in various kinematic variables of the D*-muon pair are measured as well. The differential cross sections for the inclusive regime are compared to the leading order plus parton shower MC approach, while the differential cross sections for the photoproduction regime are compared to next-to leading order calculations. The momentum fraction carried by the gluon in the proton is also measured. The possibility of extending the Global Track Trigger of the ZEUS DAQ/trigger system with a forward trigger algorithm is the technical task of this thesis. A forward trigger algorithm has been written which finds the event vertex position using STT and FMVD detector data. (orig.)

  11. Deuteron production in central Pb+Pb collisions at 158A GeV

    CERN Document Server

    Afanasiev, S V; Bächler, J; Barna, D; Barnby, L S; Bartke, Jerzy; Barton, R A; Betev, L; Bialkowska, H; Billmeier, A; Blume, C; Blyth, C O; Boimska, B; Bracinik, J; Brady, F P; Brun, R; Buncic, P; Carr, L; Cebra, D; Cooper, G E; Cramer, J G; Csató, P; Eckardt, V; Eckhardt, F; Ferenc, D; Fischer, H G; Fodor, Z; Foka, P Y; Freund, P; Friese, V; Ftácnik, J; Gál, J; Ganz, R E; Gazdzicki, M; Gladysz-Dziadus, E; Grebieszkow, J; Harris, J W; Hegyi, S; Hlinka, V; Höhne, C; Igo, G; Ivanov, M; Jacobs, P; Janik, R; Jones, P G; Kadija, K; Kolesnikov, V I; Kowalski, M; Lasiuk, B; Lévai, Peter; Malakhov, A I; Margetis, S; Markert, C; Mayes, B W; Melkumov, G L; Mischke, A; Molnár, J; Nelson, J M; Odyniec, Grazyna Janina; Oldenburg, M; Pálla, G; Panagiotou, A D; Petridis, A; Pikna, M; Pinsky, L; Poskanzer, A M; Prindle, D J; Pühlhofer, F; Reid, J G; Renfordt, R E; Retyk, W; Ritter, H G; Röhrich, D; Roland, C; Roland, G; Rybicki, A; Sammer, T; Sandoval, A; Sann, H; Semenov, A Yu; Schäfer, E; Schmitz, N; Seyboth, P; Siklér, F; Sitár, B; Skrzypczak, E; Snellings, R; Squier, G T A; Stock, Reinhard; Strmen, P; Ströbele, H; Struck, C; Susa, T; Szarka, I; Szentpétery, I; Sziklai, J; Toy, M; Trainor, T A; Trentalange, S; Ullrich, T S; Varga, D; Vassiliou, Maria; Veres, G I; Vesztergombi, G; Voloshin, S A; Vranic, D; Wang, F; Weerasundara, D D; Wenig, S; Whitten, C; Xu, N; Yates, T A; Yoo, I K; Zimányi, J

    2000-01-01

    Experimental results on deuteron emission from central Pb+Pb collisions (E/sub beam/=158A GeV, fixed target), obtained by NA49 at the CERN SPS accelerator, are presented. The transverse mass m/sub t/ distribution was measured near mid-rapidity (2.0GeV/c/sup 2/ (0

    GeV/c) for the 4% most central collisions. An exponential fit gives an inverse slope T/sub d/=(450+or-30) MeV and a yield dN/sub d//dy=0.34+or-0.03. The coalescence factor B/sub 2/(m/sub t/=m/sub 0/)=(3.5+or-1.0).10 /sup -4/ GeV/sup 2/ and its m/sub t/-dependence are determined and discussed in terms of a model that includes the collective expansion of the source created in a collision. The derived Gaussian size parameter R/sub G/ of the emission volume is consistent with earlier HBT results on the source of pion emission. (28 refs).

  12. Long-range pseudorapidity dihadron correlations in d+Au collisions at sNN=200 GeV

    Directory of Open Access Journals (Sweden)

    L. Adamczyk

    2015-07-01

    Full Text Available Dihadron angular correlations in d+Au collisions at sNN=200 GeV are reported as a function of the measured zero-degree calorimeter neutral energy and the forward charged hadron multiplicity in the Au-beam direction. A finite correlated yield is observed at large relative pseudorapidity (Δη on the near side (i.e. relative azimuth Δϕ∼0. This correlated yield as a function of Δη appears to scale with the dominant, primarily jet-related, away-side (Δϕ∼π yield. The Fourier coefficients of the Δϕ correlation, Vn=〈cos⁡nΔϕ〉, have a strong Δη dependence. In addition, it is found that V1 is approximately inversely proportional to the mid-rapidity event multiplicity, while V2 is independent of it with similar magnitude in the forward (d-going and backward (Au-going directions.

  13. Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6).

    Science.gov (United States)

    Li, Qian-Shu; Lü, Rui-Hua; Xie, Yaoming; Schaefer, Henry F

    2002-12-01

    The GeH(n) (n = 0-4) and Ge(2)H(n) (n = 0-6) systems have been studied systematically by five different density functional methods. The basis sets employed are of double-zeta plus polarization quality with additional s- and p-type diffuse functions, labeled DZP++. For each compound plausible energetically low-lying structures were optimized. The methods used have been calibrated against a comprehensive tabulation of experimental electron affinities (Chemical Reviews 102, 231, 2002). The geometries predicted in this work include yet unknown anionic species, such as Ge(2)H(-), Ge(2)H(2)(-), Ge(2)H(3)(-), Ge(2)H(4)(-), and Ge(2)H(5)(-). In general, the BHLYP method predicts the geometries closest to the few available experimental structures. A number of structures rather different from the analogous well-characterized hydrocarbon radicals and anions are predicted. For example, a vinylidene-like GeGeH(2) (-) structure is the global minimum of Ge(2)H(2) (-). For neutral Ge(2)H(4), a methylcarbene-like HGë-GeH(3) is neally degenerate with the trans-bent H(2)Ge=GeH(2) structure. For the Ge(2)H(4) (-) anion, the methylcarbene-like system is the global minimum. The three different neutral-anion energy differences reported in this research are: the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). For this family of molecules the B3LYP method appears to predict the most reliable electron affinities. The adiabatic electron affinities after the ZPVE correction are predicted to be 2.02 (Ge(2)), 2.05 (Ge(2)H), 1.25 (Ge(2)H(2)), 2.09 (Ge(2)H(3)), 1.71 (Ge(2)H(4)), 2.17 (Ge(2)H(5)), and -0.02 (Ge(2)H(6)) eV. We also reported the dissociation energies for the GeH(n) (n = 1-4) and Ge(2)H(n) (n = 1-6) systems, as well as those for their anionic counterparts. Our theoretical predictions provide strong motivation for the further experimental study of these important germanium hydrides. Copyright 2002 Wiley

  14. Effect of event selection on jetlike correlation measurement in d + Au  collisions at √{sNN} = 200 GeV

    Science.gov (United States)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Alford, J.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Averichev, G. S.; Banerjee, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandin, A. V.; Bunzarov, I.; Burton, T. P.; Butterworth, J.; Caines, H.; Calder'on de la Barca S'anchez, M.; Campbell, J. M.; Cebra, D.; Cervantes, M. C.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chattopadhyay, S.; Chen, J. H.; Cheng, J.; Cherney, M.; Christie, W.; Codrington, M. J. M.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Derradi de Souza, R.; di Ruzza, B.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Engelage, J.; Eppley, G.; Esha, R.; Evdokimov, O.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Fedorisin, J.; Feng; Filip, P.; Fisyak, Y.; Flores, C. E.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, S.; Gupta, A.; Guryn, W.; Hamad, A.; Hamed, A.; Haque, R.; Harris, J. W.; He, L.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Hofman, D. J.; Horvat, S.; Huang, H. Z.; Huang, X.; Huang, B.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jang, H.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z. H.; Kikola, D. P.; Kisel, I.; Kisiel, A.; Klein, S. R.; Koetke, D. D.; Kollegger, T.; Kosarzewski, L. K.; Kotchenda, L.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kulakov, I.; Kumar, L.; Kycia, R. A.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, X.; Li, C.; Li, X.; Li, W.; Li, Z. M.; Li, Y.; Lisa, M. A.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Ma, L.; Ma, G. L.; Ma, Y. G.; Ma, R.; Magdy, N.; Majka, R.; Manion, A.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; McDonald, D.; Minaev, N. G.; Mioduszewski, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nandi, B. K.; Nasim, Md.; Nayak, T. K.; Nigmatkulov, G.; Nogach, L. V.; Noh, S. Y.; Novak, J.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V.; Olvitt, D. L.; Page, B. S.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Pawlik, B.; Pei, H.; Perkins, C.; Pile, P.; Planinic, M.; Pluta, J.; Poljak, N.; Poniatowska, K.; Porter, J.; Poskanzer, A. M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roy, A.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandacz, A.; Sandweiss, J.; Sarkar, A.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Seger, J.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, B.; Sharma, M. K.; Shen, W. Q.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Simko, M.; Skoby, M. J.; Smirnov, D.; Smirnov, N.; Solanki, D.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Sumbera, M.; Summa, B. J.; Sun, Z.; Sun, Y.; Sun, X.; Sun, X. M.; Surrow, B.; Svirida, D. N.; Szelezniak, M. A.; Takahashi, J.; Tang, Z.; Tang, A. H.; Tarnowsky, T.; Tawfik, A. N.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Turnau, J.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vandenbroucke, M.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Vertesi, R.; Videbaek, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, J. S.; Wang, Y.; Wang, F.; Wang, Y.; Wang, G.; Wang, H.; Webb, J. C.; Webb, G.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y. F.; Xiao, Z.; Xie, W.; Xin, K.; Xu, Q. H.; Xu, H.; Xu, N.; Xu, Y. F.; Xu, Z.; Yan, W.; Yang, Y.; Yang, Q.; Yang, Y.; Yang, C.; Yang, S.; Ye, Z.; Yepes, P.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, J. B.; Zhang, X. P.; Zhang, S.; Zhang, Z.; Zhang, Y.; Zhang, J. L.; Zhao, F.; Zhao, J.; Zhong, C.; Zhu, X.; Zoulkarneeva, Y.; Zyzak, M.

    2015-04-01

    Dihadron correlations are analyzed in √{sNN} = 200 GeV d + Au collisions classified by forward charged particle multiplicity and zero-degree neutral energy in the Au-beam direction. It is found that the jetlike correlated yield increases with the event multiplicity. After taking into account this dependence, the non-jet contribution on the away side is minimal, leaving little room for a back-to-back ridge in these collisions.

  15. Superconductivity in ThPd2Ge2

    Science.gov (United States)

    Domieracki, Krzysztof; Wiśniewski, Piotr; Wochowski, Konrad; Romanova, Tetiana; Hackemer, Alicja; Gorzelniak, Roman; Pikul, Adam; Kaczorowski, Dariusz

    2018-05-01

    Our on-going search for unconventional superconductors among the ThTE2Ge2 phases (TE is a d-electron transition metal) revealed that ThPd2Ge2, which crystallizes with a body-centered tetragonal ThCr2Si2-type structure, exhibits superconductivity at low temperatures. In this paper, we report on the electrical transport and thermodynamic properties of a polycrystalline sample of this new superconductor, extended down to 50 mK. The experimental data indicates weakly-coupled type-II superconductivity with Tc = 0.63(2) K and μ0Hc2(0) = 32(2) mT.

  16. Experimental search for B=2, T=0 states in the d+d->d+X reaction

    International Nuclear Information System (INIS)

    Combes, M.P.; Berthet, P.; Frascaria, R.; Perdrisat, C.F.; Tatischeff, B.; Willis, N.; Aslanides, E.; Hibou, F.; Bing, O.; Beurtey, R.; Boivin, M.; Hutcheon, D.; Le Bornec, Y.; Fabbri, F.; Picozza, P.; Satta, L.; Yonnet, J.

    1984-01-01

    A search for isoscalar dibaryonic resonances by means of missing-mass spectra in the d + d -> d + X reaction has been attempted using deuteron beams of T = 2.29, 2.00 and 1.65 GeV. The results do not show any evidence for a narrow peak with a limit of 30 nb/GeV 2 for a 15 MeV width or a broad enhancement which could be unambiguously attributed to a dibaryonic resonance. (orig.)

  17. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  18. Observation of overlapping spin-1 and spin-3 D0K- resonances at mass 2.86 GeV/c2.

    Science.gov (United States)

    Aaij, R; Adeva, B; Adinolfi, M; Affolder, A; Ajaltouni, Z; Akar, S; Albrecht, J; Alessio, F; Alexander, M; Ali, S; Alkhazov, G; Alvarez Cartelle, P; Alves, A A; Amato, S; Amerio, S; Amhis, Y; An, L; Anderlini, L; Anderson, J; Andreassen, R; Andreotti, M; Andrews, J E; Appleby, R B; Aquines Gutierrez, O; Archilli, F; Artamonov, A; Artuso, M; Aslanides, E; Auriemma, G; Baalouch, M; Bachmann, S; Back, J J; Badalov, A; Baesso, C; Baldini, W; Barlow, R J; Barschel, C; Barsuk, S; Barter, W; Batozskaya, V; Battista, V; Bay, A; Beaucourt, L; Beddow, J; Bedeschi, F; Bediaga, I; Belogurov, S; Belous, K; Belyaev, I; Ben-Haim, E; Bencivenni, G; Benson, S; Benton, J; Berezhnoy, A; Bernet, R; Bettler, M-O; van Beuzekom, M; Bien, A; Bifani, S; Bird, T; Bizzeti, A; Bjørnstad, P M; Blake, T; Blanc, F; Blouw, J; Blusk, S; Bocci, V; Bondar, A; Bondar, N; Bonivento, W; Borghi, S; Borgia, A; Borsato, M; Bowcock, T J V; Bowen, E; Bozzi, C; Brambach, T; van den Brand, J; Bressieux, J; Brett, D; Britsch, M; Britton, T; Brodzicka, J; Brook, N H; Brown, H; Bursche, A; Busetto, G; Buytaert, J; Cadeddu, S; Calabrese, R; Calvi, M; Calvo Gomez, M; Campana, P; Campora Perez, D; Carbone, A; Carboni, G; Cardinale, R; Cardini, A; Carson, L; Carvalho Akiba, K; Casse, G; Cassina, L; Castillo Garcia, L; Cattaneo, M; Cauet, Ch; Cenci, R; Charles, M; Charpentier, Ph; Chefdeville, M; Chen, S; Cheung, S-F; Chiapolini, N; Chrzaszcz, M; Ciba, K; Cid Vidal, X; Ciezarek, G; Clarke, P E L; Clemencic, M; Cliff, H V; Closier, J; Coco, V; Cogan, J; Cogneras, E; Collins, P; Comerma-Montells, A; Contu, A; Cook, A; Coombes, M; Coquereau, S; Corti, G; Corvo, M; Counts, I; Couturier, B; Cowan, G A; Craik, D C; Cruz Torres, M; Cunliffe, S; Currie, R; D'Ambrosio, C; Dalseno, J; David, P; David, P N Y; Davis, A; De Bruyn, K; De Capua, S; De Cian, M; De Miranda, J M; De Paula, L; De Silva, W; De Simone, P; Decamp, D; Deckenhoff, M; Del Buono, L; Déléage, N; Derkach, D; Deschamps, O; Dettori, F; Di Canto, A; Dijkstra, H; Donleavy, S; Dordei, F; Dorigo, M; Dosil Suárez, A; Dossett, D; Dovbnya, A; Dreimanis, K; Dujany, G; Dupertuis, F; Durante, P; Dzhelyadin, R; Dziurda, A; Dzyuba, A; Easo, S; Egede, U; Egorychev, V; Eidelman, S; Eisenhardt, S; Eitschberger, U; Ekelhof, R; Eklund, L; El Rifai, I; Elsasser, Ch; Ely, S; Esen, S; Evans, H-M; Evans, T; Falabella, A; Färber, C; Farinelli, C; Farley, N; Farry, S; Fay, Rf; Ferguson, D; Fernandez Albor, V; Ferreira Rodrigues, F; Ferro-Luzzi, M; Filippov, S; Fiore, M; Fiorini, M; Firlej, M; Fitzpatrick, C; Fiutowski, T; Fontana, M; Fontanelli, F; Forty, R; Francisco, O; Frank, M; Frei, C; Frosini, M; Fu, J; Furfaro, E; Gallas Torreira, A; Galli, D; Gallorini, S; Gambetta, S; Gandelman, M; Gandini, P; Gao, Y; García Pardiñas, J; Garofoli, J; Garra Tico, J; Garrido, L; Gaspar, C; Gauld, R; Gavardi, L; Gavrilov, G; Geraci, A; Gersabeck, E; Gersabeck, M; Gershon, T; Ghez, Ph; Gianelle, A; Gianì, S; Gibson, V; Giubega, L; Gligorov, V V; Göbel, C; Golubkov, D; Golutvin, A; Gomes, A; Gotti, C; Grabalosa Gándara, M; Graciani Diaz, R; Granado Cardoso, L A; Graugés, E; Graziani, G; Grecu, A; Greening, E; Gregson, S; Griffith, P; Grillo, L; Grünberg, O; Gui, B; Gushchin, E; Guz, Yu; Gys, T; Hadjivasiliou, C; Haefeli, G; Haen, C; Haines, S C; Hall, S; Hamilton, B; Hampson, T; Han, X; Hansmann-Menzemer, S; Harnew, N; Harnew, S T; Harrison, J; He, J; Head, T; Heijne, V; Hennessy, K; Henrard, P; Henry, L; Hernando Morata, J A; van Herwijnen, E; Heß, M; Hicheur, A; Hill, D; Hoballah, M; Hombach, C; Hulsbergen, W; Hunt, P; Hussain, N; Hutchcroft, D; Hynds, D; Idzik, M; Ilten, P; Jacobsson, R; Jaeger, A; Jalocha, J; Jans, E; Jaton, P; Jawahery, A; Jing, F; John, M; Johnson, D; Jones, C R; Joram, C; Jost, B; Jurik, N; Kaballo, M; Kandybei, S; Kanso, W; Karacson, M; Karbach, T M; Karodia, S; Kelsey, M; Kenyon, I R; Ketel, T; Khanji, B; Khurewathanakul, C; Klaver, S; Klimaszewski, K; Kochebina, O; Kolpin, M; Komarov, I; Koopman, R F; Koppenburg, P; Korolev, M; Kozlinskiy, A; Kravchuk, L; Kreplin, K; Kreps, M; Krocker, G; Krokovny, P; Kruse, F; Kucewicz, W; Kucharczyk, M; Kudryavtsev, V; Kurek, K; Kvaratskheliya, T; La Thi, V N; Lacarrere, D; Lafferty, G; Lai, A; Lambert, D; Lambert, R W; Lanfranchi, G; Langenbruch, C; Langhans, B; Latham, T; Lazzeroni, C; Le Gac, R; van Leerdam, J; Lees, J-P; Lefèvre, R; Leflat, A; Lefrançois, J; Leo, S; Leroy, O; Lesiak, T; Leverington, B; Li, Y; Likhomanenko, T; Liles, M; Lindner, R; Linn, C; Lionetto, F; Liu, B; Lohn, S; Longstaff, I; Lopes, J H; Lopez-March, N; Lowdon, P; Lu, H; Lucchesi, D; Luo, H; Lupato, A; Luppi, E; Lupton, O; Machefert, F; Machikhiliyan, I V; Maciuc, F; Maev, O; Malde, S; Malinin, A; Manca, G; Mancinelli, G; Mapelli, A; Maratas, J; Marchand, J F; Marconi, U; Marin Benito, C; Marino, P; Märki, R; Marks, J; Martellotti, G; Martens, A; Martín Sánchez, A; Martinelli, M; Martinez Santos, D; Martinez Vidal, F; Martins Tostes, D; Massafferri, A; Matev, R; Mathe, Z; Matteuzzi, C; Mazurov, A; McCann, M; McCarthy, J; McNab, A; McNulty, R; McSkelly, B; Meadows, B; Meier, F; Meissner, M; Merk, M; Milanes, D A; Minard, M-N; Moggi, N; Molina Rodriguez, J; Monteil, S; Morandin, M; Morawski, P; Mordà, A; Morello, M J; Moron, J; Morris, A-B; Mountain, R; Muheim, F; Müller, K; Mussini, M; Muster, B; Naik, P; Nakada, T; Nandakumar, R; Nasteva, I; Needham, M; Neri, N; Neubert, S; Neufeld, N; Neuner, M; Nguyen, A D; Nguyen, T D; Nguyen-Mau, C; Nicol, M; Niess, V; Niet, R; Nikitin, N; Nikodem, T; Novoselov, A; O'Hanlon, D P; Oblakowska-Mucha, A; Obraztsov, V; Oggero, S; Ogilvy, S; Okhrimenko, O; Oldeman, R; Onderwater, G; Orlandea, M; Otalora Goicochea, J M; Owen, P; Oyanguren, A; Pal, B K; Palano, A; Palombo, F; Palutan, M; Panman, J; Papanestis, A; Pappagallo, M; Pappalardo, L L; Parkes, C; Parkinson, C J; Passaleva, G; Patel, G D; Patel, M; Patrignani, C; Pazos Alvarez, A; Pearce, A; Pellegrino, A; Pepe Altarelli, M; Perazzini, S; Perez Trigo, E; Perret, P; Perrin-Terrin, M; Pescatore, L; Pesen, E; Petridis, K; Petrolini, A; Picatoste Olloqui, E; Pietrzyk, B; Pilař, T; Pinci, D; Pistone, A; Playfer, S; Plo Casasus, M; Polci, F; Poluektov, A; Polycarpo, E; Popov, A; Popov, D; Popovici, B; Potterat, C; Price, E; Prisciandaro, J; Pritchard, A; Prouve, C; Pugatch, V; Puig Navarro, A; Punzi, G; Qian, W; Rachwal, B; Rademacker, J H; Rakotomiaramanana, B; Rama, M; Rangel, M S; Raniuk, I; Rauschmayr, N; Raven, G; Reichert, S; Reid, M M; Dos Reis, A C; Ricciardi, S; Richards, S; Rihl, M; Rinnert, K; Rives Molina, V; Roa Romero, D A; Robbe, P; Rodrigues, A B; Rodrigues, E; Rodriguez Perez, P; Roiser, S; Romanovsky, V; Romero Vidal, A; Rotondo, M; Rouvinet, J; Ruf, T; Ruffini, F; Ruiz, H; Ruiz Valls, P; Saborido Silva, J J; Sagidova, N; Sail, P; Saitta, B; Salustino Guimaraes, V; Sanchez Mayordomo, C; Sanmartin Sedes, B; Santacesaria, R; Santamarina Rios, C; Santovetti, E; Sarti, A; Satriano, C; Satta, A; Saunders, D M; Savrie, M; Savrina, D; Schiller, M; Schindler, H; Schlupp, M; Schmelling, M; Schmidt, B; Schneider, O; Schopper, A; Schune, M-H; Schwemmer, R; Sciascia, B; Sciubba, A; Seco, M; Semennikov, A; Sepp, I; Serra, N; Serrano, J; Sestini, L; Seyfert, P; Shapkin, M; Shapoval, I; Shcheglov, Y; Shears, T; Shekhtman, L; Shevchenko, V; Shires, A; Silva Coutinho, R; Simi, G; Sirendi, M; Skidmore, N; Skwarnicki, T; Smith, N A; Smith, E; Smith, E; Smith, J; Smith, M; Snoek, H; Sokoloff, M D; Soler, F J P; Soomro, F; Souza, D; Souza De Paula, B; Spaan, B; Sparkes, A; Spradlin, P; Sridharan, S; Stagni, F; Stahl, M; Stahl, S; Steinkamp, O; Stenyakin, O; Stevenson, S; Stoica, S; Stone, S; Storaci, B; Stracka, S; Straticiuc, M; Straumann, U; Stroili, R; Subbiah, V K; Sun, L; Sutcliffe, W; Swientek, K; Swientek, S; Syropoulos, V; Szczekowski, M; Szczypka, P; Szilard, D; Szumlak, T; T'Jampens, S; Teklishyn, M; Tellarini, G; Teubert, F; Thomas, C; Thomas, E; van Tilburg, J; Tisserand, V; Tobin, M; Tolk, S; Tomassetti, L; Tonelli, D; Topp-Joergensen, S; Torr, N; Tournefier, E; Tourneur, S; Tran, M T; Tresch, M; Tsaregorodtsev, A; Tsopelas, P; Tuning, N; Ubeda Garcia, M; Ukleja, A; Ustyuzhanin, A; Uwer, U; Vagnoni, V; Valenti, G; Vallier, A; Vazquez Gomez, R; Vazquez Regueiro, P; Vázquez Sierra, C; Vecchi, S; Velthuis, J J; Veltri, M; Veneziano, G; Vesterinen, M; Viaud, B; Vieira, D; Vieites Diaz, M; Vilasis-Cardona, X; Vollhardt, A; Volyanskyy, D; Voong, D; Vorobyev, A; Vorobyev, V; Voß, C; Voss, H; de Vries, J A; Waldi, R; Wallace, C; Wallace, R; Walsh, J; Wandernoth, S; Wang, J; Ward, D R; Watson, N K; Websdale, D; Whitehead, M; Wicht, J; Wiedner, D; Wilkinson, G; Williams, M P; Williams, M; Wilson, F F; Wimberley, J; Wishahi, J; Wislicki, W; Witek, M; Wormser, G; Wotton, S A; Wright, S; Wu, S; Wyllie, K; Xie, Y; Xing, Z; Xu, Z; Yang, Z; Yuan, X; Yushchenko, O; Zangoli, M; Zavertyaev, M; Zhang, L; Zhang, W C; Zhang, Y; Zhelezov, A; Zhokhov, A; Zhong, L; Zvyagin, A

    2014-10-17

    The resonant substructure of B(s)(0) → D(0)K(-)π(+) decays is studied using a data sample corresponding to an integrated luminosity of 3.0 fb(-1) of pp collision data recorded by the LHCb detector. An excess at m(D(0)K(-))≈ 2.86 GeV/c(2) is found to be an admixture of spin-1 and spin-3 resonances. Therefore, the D(sJ)*(2860)(-) state previously observed in inclusive e(+)e(-) → D(0)K(-)X and pp → D(0)K(-)X processes consists of at least two particles. This is the first observation of a heavy flavored spin-3 resonance, and the first time that any spin-3 particle has been seen to be produced in B decays. The masses and widths of the new states and of the D(s2)*(2573)(-) meson are measured, giving the most precise determinations to date.

  19. Deep learning in breast cancer risk assessment: evaluation of fine-tuned convolutional neural networks on a clinical dataset of FFDMs

    Science.gov (United States)

    Li, Hui; Mendel, Kayla R.; Lee, John H.; Lan, Li; Giger, Maryellen L.

    2018-02-01

    We evaluated the potential of deep learning in the assessment of breast cancer risk using convolutional neural networks (CNNs) fine-tuned on full-field digital mammographic (FFDM) images. This study included 456 clinical FFDM cases from two high-risk datasets: BRCA1/2 gene-mutation carriers (53 cases) and unilateral cancer patients (75 cases), and a low-risk dataset as the control group (328 cases). All FFDM images (12-bit quantization and 100 micron pixel) were acquired with a GE Senographe 2000D system and were retrospectively collected under an IRB-approved, HIPAA-compliant protocol. Regions of interest of 256x256 pixels were selected from the central breast region behind the nipple in the craniocaudal projection. VGG19 pre-trained on the ImageNet dataset was used to classify the images either as high-risk or as low-risk subjects. The last fully-connected layer of pre-trained VGG19 was fine-tuned on FFDM images for breast cancer risk assessment. Performance was evaluated using the area under the receiver operating characteristic (ROC) curve (AUC) in the task of distinguishing between high-risk and low-risk subjects. AUC values of 0.84 (SE=0.05) and 0.72 (SE=0.06) were obtained in the task of distinguishing between the BRCA1/2 gene-mutation carriers and low-risk women and between unilateral cancer patients and low-risk women, respectively. Deep learning with CNNs appears to be able to extract parenchymal characteristics directly from FFDMs which are relevant to the task of distinguishing between cancer risk populations, and therefore has potential to aid clinicians in assessing mammographic parenchymal patterns for cancer risk assessment.

  20. Building 2000

    International Nuclear Information System (INIS)

    Den Ouden, C.; Steemers, T.C.

    1992-01-01

    This is the first volume of Building 2000, a pilot project of the Commission's R and D-programme 'Solar Energy Applications to Buildings' with the purpose of encouraging the adoption of solar architecture in large buildings. In this first rich illustrated volume the results of the design studies illustrating passive solar architecture in buildings in the European Community are presented in particular for the building categories as mentioned in the subtitle. In a second volume, a similar series of studies is presented for the building categories: office buildings, public buildings and hotels and holiday complexes. Several Design Support Workshops were organized during the Building 2000 programme during which Building 2000 design teams could directly exchange ideas with the various design advice experts represented at these workshops. In the second part of the Building 2000 final report a summary of a selection of many reports is presented (15 papers), as produced by Design Support experts. Most of the design support activities resulted in changes of the various designs, as have been reported by the design teams in the brochures presented in the first part of this book. It is to be expected that design aids and simulation tools for passive solar options, daylighting concepts, comfort criteria etc., will be utilized more frequently in the future. This will result in a better exchange of information between the actual design practitioners and the European R and D community. This technology transfer will result in buildings with a higher quality with respect to energy and environmental issues

  1. Building 2000

    International Nuclear Information System (INIS)

    Den Ouden, C.; Steemers, T.C.

    1992-01-01

    This is the second volume of Building 2000, a pilot project of the Commission's R and D-programme 'Solar Energy Applications to Buildings' with the purpose of encouraging the adoption of solar architecture in large buildings. In this second rich illustrated volume the results of the design studies illustrating passive solar architecture in buildings in the European Community are presented in particular for the building categories as mentioned in the subtitle. In the first volume, a similar series of studies is presented for the building categories: schools, laboratories and universities, and sports and educational centres. Several Design Support Workshops were organized during the Building 2000 programme during which Building 2000 design teams could directly exchange ideas with the various design advice experts represented at these workshops. In the second part of the Building 2000 final report a summary of a selection of many reports is presented (11 papers), as produced by Design Support experts. Most of the design support activities resulted in changes of the various designs, as have been reported by the design teams in the brochures presented in the first part of this book. It is to be expected that design aids and simulation tools for passive solar options, daylighting concepts, comfort criteria etc., will be utilized more frequently in the future. This will result in a better exchange of information between the actual design practitioners and the European R and D community. This technology transfer will result in buildings with a higher quality with respect to energy and environmental issues

  2. Building 2000

    Energy Technology Data Exchange (ETDEWEB)

    Den Ouden, C [EGM Engineering BV, Dordrecht (Netherlands); Steemers, T C [Commission of the European Communities, Brussels (Belgium)

    1992-01-01

    This is the second volume of Building 2000, a pilot project of the Commission's R and D-programme 'Solar Energy Applications to Buildings' with the purpose of encouraging the adoption of solar architecture in large buildings. In this second rich illustrated volume the results of the design studies illustrating passive solar architecture in buildings in the European Community are presented in particular for the building categories as mentioned in the subtitle. In the first volume, a similar series of studies is presented for the building categories: schools, laboratories and universities, and sports and educational centres. Several Design Support Workshops were organized during the Building 2000 programme during which Building 2000 design teams could directly exchange ideas with the various design advice experts represented at these workshops. In the second part of the Building 2000 final report a summary of a selection of many reports is presented (11 papers), as produced by Design Support experts. Most of the design support activities resulted in changes of the various designs, as have been reported by the design teams in the brochures presented in the first part of this book. It is to be expected that design aids and simulation tools for passive solar options, daylighting concepts, comfort criteria etc., will be utilized more frequently in the future. This will result in a better exchange of information between the actual design practitioners and the European R and D community. This technology transfer will result in buildings with a higher quality with respect to energy and environmental issues.

  3. Building 2000

    Energy Technology Data Exchange (ETDEWEB)

    Den Ouden, C [EGM Engineering BV, Dordrecht (Netherlands); Steemers, T C [Commission of the European Communities, Brussels (Belgium)

    1992-01-01

    This is the first volume of Building 2000, a pilot project of the Commission's R and D-programme 'Solar Energy Applications to Buildings' with the purpose of encouraging the adoption of solar architecture in large buildings. In this first rich illustrated volume the results of the design studies illustrating passive solar architecture in buildings in the European Community are presented in particular for the building categories as mentioned in the subtitle. In a second volume, a similar series of studies is presented for the building categories: office buildings, public buildings and hotels and holiday complexes. Several Design Support Workshops were organized during the Building 2000 programme during which Building 2000 design teams could directly exchange ideas with the various design advice experts represented at these workshops. In the second part of the Building 2000 final report a summary of a selection of many reports is presented (15 papers), as produced by Design Support experts. Most of the design support activities resulted in changes of the various designs, as have been reported by the design teams in the brochures presented in the first part of this book. It is to be expected that design aids and simulation tools for passive solar options, daylighting concepts, comfort criteria etc., will be utilized more frequently in the future. This will result in a better exchange of information between the actual design practitioners and the European R and D community. This technology transfer will result in buildings with a higher quality with respect to energy and environmental issues.

  4. Electronic structure of LaFe{sub 2}X{sub 2} (X = Si,Ge)

    Energy Technology Data Exchange (ETDEWEB)

    Hase, I., E-mail: i.hase@aist.go.jp [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan); Yanagisawa, T. [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan)

    2011-11-15

    We have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which well explains the result of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. D(E{sub F}) strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom, as also found in iron-pnictide system. Recently found iron-pnictide superconductor (Ba,K)Fe{sub 2}As{sub 2} and the heavy-fermion superconductor CeCu{sub 2}Si{sub 2} both have the same crystal structure. In this paper we have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. These compounds also have the same crystal structure and closely related to both of (Ba,K)Fe{sub 2}As{sub 2} and CeRu{sub 2}Ge{sub 2}. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which are already found that they well explain the results of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. The density of states at the Fermi level strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom from the two-dimensional Fe plane, as also found in iron-pnictide system. The electronic specific heat coefficient is 11.8 mJ/mol K{sup 2} for LaFe{sub 2}Si{sub 2} and 12.5 mJ/mol K{sup 2} for LaFe{sub 2}Ge{sub 2}, which is about 1/3 and 1/2 of experimental results, respectively.

  5. U.S. Transportation Command's Reporting of Property, Plant, and Equipment Assets on the FY 2000 DoD Agency-Wide Financial Statements

    National Research Council Canada - National Science Library

    Granetto, Paul

    2001-01-01

    .... The accuracy of the $78 billion of property, plant, and equipment reported on the FY 2000 DoD Agency-Wide Financial Statements is essential to DoD receiving favorable audit opinions on its financial statements. The U.S...

  6. Inclusive production of $D^{*\\pm}$ mesons in photon-photon collisions at $\\sqrt{s}_{ee}$= 183 and 189 GeV and a first measurement of $F^{\\gamma}_{2,c}$

    CERN Document Server

    Abbiendi, G.; Akesson, P.F.; Alexander, G.; Allison, John; Anderson, K.J.; Arcelli, S.; Asai, S.; Ashby, S.F.; Axen, D.; Azuelos, G.; Bailey, I.; Ball, A.H.; Barberio, E.; Barillari, T.; Barlow, Roger J.; Batley, J.R.; Baumann, S.; Behnke, T.; Bell, Kenneth Watson; Bella, G.; Bellerive, A.; Bentvelsen, S.; Bethke, S.; Betts, S.; Biebel, O.; Biguzzi, A.; Bloodworth, I.J.; Bock, P.; Bohme, J.; Boeriu, O.; Bonacorsi, D.; Boutemeur, M.; Braibant, S.; Bright-Thomas, P.; Brigliadori, L.; Brown, Robert M.; Burckhart, H.J.; Capiluppi, P.; Carnegie, R.K.; Carter, A.A.; Carter, J.R.; Chang, C.Y.; Charlton, David G.; Chrisman, D.; Ciocca, C.; Clarke, P.E.L.; Clay, E.; Cohen, I.; Conboy, J.E.; Cooke, O.C.; Couchman, J.; Couyoumtzelis, C.; Coxe, R.L.; Cuffiani, M.; Dado, S.; Dallavalle, G.Marco; Dallison, S.; Davis, R.; de Roeck, A.; Dervan, P.; Desch, K.; Dienes, B.; Dixit, M.S.; Donkers, M.; Dubbert, J.; Duchovni, E.; Duckeck, G.; Duerdoth, I.P.; Estabrooks, P.G.; Etzion, E.; Fabbri, F.; Fanfani, A.; Fanti, M.; Faust, A.A.; Feld, L.; Ferrari, P.; Fiedler, F.; Fierro, M.; Fleck, I.; Frey, A.; Furtjes, A.; Futyan, D.I.; Gagnon, P.; Gary, J.W.; Gaycken, G.; Geich-Gimbel, C.; Giacomelli, G.; Giacomelli, P.; Gingrich, D.M.; Glenzinski, D.; Goldberg, J.; Gorn, W.; Grandi, C.; Graham, K.; Gross, E.; Grunhaus, J.; Gruwe, M.; Hajdu, C.; Hanson, G.G.; Hansroul, M.; Hapke, M.; Harder, K.; Harel, A.; Hargrove, C.K.; Harin-Dirac, M.; Hauschild, M.; Hawkes, C.M.; Hawkings, R.; Hemingway, R.J.; Herten, G.; Heuer, R.D.; Hildreth, M.D.; Hill, J.C.; Hobson, P.R.; Hocker, James Andrew; Hoffman, Kara Dion; Homer, R.J.; Honma, A.K.; Horvath, D.; Hossain, K.R.; Howard, R.; Huntemeyer, P.; Igo-Kemenes, P.; Imrie, D.C.; Ishii, K.; Jacob, F.R.; Jawahery, A.; Jeremie, H.; Jimack, M.; Jones, C.R.; Jovanovic, P.; Junk, T.R.; Kanaya, N.; Kanzaki, J.; Karapetian, G.; Karlen, D.; Kartvelishvili, V.; Kawagoe, K.; Kawamoto, T.; Kayal, P.I.; Keeler, R.K.; Kellogg, R.G.; Kennedy, B.W.; Kim, D.H.; Klier, A.; Kobayashi, T.; Kobel, M.; Kokott, T.P.; Kolrep, M.; Komamiya, S.; Kowalewski, Robert V.; Kress, T.; Krieger, P.; von Krogh, J.; Kuhl, T.; Kupper, M.; Kyberd, P.; Lafferty, G.D.; Landsman, H.; Lanske, D.; Lauber, J.; Lawson, I.; Layter, J.G.; Lellouch, D.; Letts, J.; Levinson, L.; Liebisch, R.; Lillich, J.; List, B.; Littlewood, C.; Lloyd, A.W.; Lloyd, S.L.; Loebinger, F.K.; Long, G.D.; Losty, M.J.; Lu, J.; Ludwig, J.; Macchiolo, A.; Macpherson, A.; Mader, W.; Mannelli, M.; Marcellini, S.; Marchant, T.E.; Martin, A.J.; Martin, J.P.; Martinez, G.; Mashimo, T.; Mattig, Peter; McDonald, W.John; McKenna, J.; Mckigney, E.A.; McMahon, T.J.; McPherson, R.A.; Meijers, F.; Mendez-Lorenzo, P.; Merritt, F.S.; Mes, H.; Meyer, I.; Michelini, A.; Mihara, S.; Mikenberg, G.; Miller, D.J.; Mohr, W.; Montanari, A.; Mori, T.; Nagai, K.; Nakamura, I.; Neal, H.A.; Nisius, R.; O'Neale, S.W.; Oakham, F.G.; Odorici, F.; Ogren, H.O.; Okpara, A.; Oreglia, M.J.; Orito, S.; Pasztor, G.; Pater, J.R.; Patrick, G.N.; Patt, J.; Perez-Ochoa, R.; Petzold, S.; Pfeifenschneider, P.; Pilcher, J.E.; Pinfold, J.; Plane, David E.; Poli, B.; Polok, J.; Przybycien, M.; Quadt, A.; Rembser, C.; Rick, H.; Robins, S.A.; Rodning, N.; Roney, J.M.; Rosati, S.; Roscoe, K.; Rossi, A.M.; Rozen, Y.; Runge, K.; Runolfsson, O.; Rust, D.R.; Sachs, K.; Saeki, T.; Sahr, O.; Sang, W.M.; Sarkisian, E.K.G.; Sbarra, C.; Schaile, A.D.; Schaile, O.; Scharff-Hansen, P.; Schieck, J.; Schmitt, S.; Schoning, A.; Schroder, Matthias; Schumacher, M.; Schwick, C.; Scott, W.G.; Seuster, R.; Shears, T.G.; Shen, B.C.; Shepherd-Themistocleous, C.H.; Sherwood, P.; Siroli, G.P.; Skuja, A.; Smith, A.M.; Snow, G.A.; Sobie, R.; Soldner-Rembold, S.; Spagnolo, S.; Sproston, M.; Stahl, A.; Stephens, K.; Stoll, K.; Strom, David M.; Strohmer, R.; Surrow, B.; Talbot, S.D.; Taras, P.; Tarem, S.; Teuscher, R.; Thiergen, M.; Thomas, J.; Thomson, M.A.; Torrence, E.; Towers, S.; Trefzger, T.; Trigger, I.; Trocsanyi, Z.; Tsur, E.; Turner-Watson, M.F.; Ueda, I.; Van Kooten, Rick J.; Vannerem, P.; Verzocchi, M.; Voss, H.; Wackerle, F.; Waller, D.; Ward, C.P.; Ward, D.R.; Watkins, P.M.; Watson, A.T.; Watson, N.K.; Wells, P.S.; Wengler, T.; Wermes, N.; Wetterling, D.; White, J.S.; Wilson, G.W.; Wilson, J.A.; Wyatt, T.R.; Yamashita, S.; Zacek, V.; Zer-Zion, D.

    2000-01-01

    The inclusive production of D*+- mesons in photon-photon collisions has been measured using the OPAL detector at LEP at e+e- centre-of-mass energies of 183 and 189GeV. The D* mesons are reconstructed in their decay to D0pi+ with the D0 observed in the two decay modes Kpi+ and Kpi+pi-pi+. After background subtraction, 100.4+-12.6(stat) D*+- mesons have been selected in events without observed scattered beam electron ("anti-tagged") and 29.8+-5.9 (stat) D*+- mesons in events where one beam electron is scattered into the detector ("single-tagged"). Direct and single-resolved events are studied separately. Differential cross-sections as functions of the D* transverse momentum p_t and pseudorapidity \\eta are presented in the kinematic region 2GeV and calculations. The total cross-section for the process (e+e- to e+e-ccbar), where the charm quarks are produced in the collision of two quasi-real photons, is measured to be 842+-97(stat)+-75(syst)+-196(extrapolation)pb. A first measurement of the charm st...

  7. Charged particle spectra in π-p,π-d and π-C interactions at 38 GeV/c with single-particle high pT trigger

    International Nuclear Information System (INIS)

    Boos, E.G.; Mosienko, A.M.; Baerwolff, H.

    1987-01-01

    Angular momentum distributions of charged secondaries from 38 GeV/c π - p, π - d and π - C interactions triggered on at least one particle with p T >or approx. 1 GeV/c at an 90 deg πN c.m.s angle have been investigated with the spectrometer RISK (a streamer chamber placed into a magnet). Transversal momentum spectra of secondaries in the 0.4-2.4 GeV/c p T -range including triggering particles are quite well fitted with the exponential function for all nuclei studied and for particles of different charges. The azimuthal angle distribution of secondaries (an angle relative to the p T -tilde of the triggering particle) for both trigger-like and trigger-unlike charges is anisotropic, preferring the direction away from the triggering particle. The mean charge distribution of associated particles is discussed. A small fraction of triggering particles is due to neutral strange particle decays. Many Λ 0 -hyperons were detected among those neutral strange triggers

  8. Growth and characterization of Ge nanostructures selectively grown on patterned Si

    International Nuclear Information System (INIS)

    Cheng, M.H.; Ni, W.X.; Luo, G.L.; Huang, S.C.; Chang, J.J.; Lee, C.Y.

    2008-01-01

    By utilizing different distribution of strain fields around the edges of oxide, which are dominated by a series of sizes of oxide-patterned windows, long-range ordered self-assembly Ge nanostructures, such as nano-rings, nano-disks and nano-dots, were selectively grown by ultra high vacuum chemical vapor deposition (UHV-CVD) on Si (001) substrates. High-resolution double-crystal symmetrical ω/2θ scans and two-dimensional reciprocal space mapping (2D-RSM) technologies employing the triple axis X-ray diffractometry have been used to evaluate the quality and strain status of as-deposited as well as in-situ annealed Ge nanostructures. Furthermore, we also compare the quality and strain status of Ge epilayers grown on planar unpatterned Si substrates. It was found that the quality of all Ge epitaxial structures is improved after in-situ annealing process and the quality of Ge nano-disk structures is better than that of Ge epilayers on planar unpatterned Si substrates, because oxide sidewalls are effective dislocation sinks. We also noted that the degree of relaxation for as-deposited Ge epilayers on planar unpatterned Si substrates is less than that for as-deposited Ge nano-disk structures. After in-situ annealing process, all Ge epitaxial structures are almost at full relaxation whatever Ge epitaxial structures grew on patterned or unpatterned Si substrates

  9. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  10. Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure

    International Nuclear Information System (INIS)

    Yuan, C L; Lee, P S

    2008-01-01

    A Ge/GeO 2 core/shell nanostructure embedded in an Al 2 O 3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO 2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO 2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering

  11. Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

    Science.gov (United States)

    Yuan, C L; Lee, P S

    2008-09-03

    A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

  12. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Hung-Pin Hsu

    2013-01-01

    Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

  13. Effective x-ray attenuation measurements with full field digital mammography

    International Nuclear Information System (INIS)

    Heine, John J.; Behera, Madhusmita

    2006-01-01

    This work shows that effective x-ray attenuation coefficients may be estimated by applying Beer's Law to phantom image data acquired with the General Electric Senographe 2000D full field digital mammography system. Theoretical developments are provided indicating that an approximate form of the Beer's relation holds for polychromatic x-ray beams. The theoretical values were compared with experimentally determined measured values, which were estimated at various detector locations. The measured effective attenuation coefficients are in agreement with those estimated with theoretical developments and numerical integration. The work shows that the measured quantities show little spatial variation. The main ideas are demonstrated with polymethylmethacrylate and breast tissue equivalent phantom imaging experiments. The work suggests that the effective attenuation coefficients may be used as known values for radiometric standardization applications that compensate for the image acquisition influences. The work indicates that it is possible to make quantitative attenuation coefficient measurements from a system designed for clinical purposes

  14. Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

    Science.gov (United States)

    Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

    2017-05-01

    We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

  15. Charged hadron composition of the final state in e+e- annihilation up to 1.9 GeV/c at E/sub cm/ = 29 GeV

    International Nuclear Information System (INIS)

    Ong, P.P.

    1983-08-01

    The momentum distributions of hadrons produced in e+e - collisions at a center of mass energy of 29 GeV have been measured. The data used in this analysis were collected by the High Resolution Spectrometer (HRS) at the Positron Electron Project (PEP) in the Spring of 1982. The HRS is a general purpose particle detector consisting of a 16.2 kgauss solenoidal magnet, 17 layers of tracking chambers and multiple layers of lead-scintillator shower counters. The data consist of 8,200 hadronic events, corresponding to an integrated luminosity of 19.6 pbarn -1 at E/sub cm/ = 29 GeV. Using the barrel shower counters' time-of-flight (TOF) measurements, charged particles in the momentum range 0.5 - 1.9 GeV/c are separated statistically. Measurements of differential cross sections, d sigma /dp, scaled cross sections, S*(dsigma/dXp), and charged particle fractions are presented and compared with measurements made by the TASSO and the JADE groups

  16. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

    OpenAIRE

    Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

    2017-01-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

  17. Influence of Si and Ge on the magnetic phase transition and magnetocaloric properties of MnFe(P, Si, Ge)

    International Nuclear Information System (INIS)

    Cam Thanh, D.T.; Brueck, E.; Tegus, O.; Klaasse, J.C.P.; Buschow, K.H.J.

    2007-01-01

    Recently, we found a large magnetocaloric effect (MCE) and favourable magnetic properties in low cost and nontoxic MnFe(P, Si, Ge) compounds [D.T. Cam Thanh, E. Brueck, O. Tegus, J.C.P. Klaasse, T.J. Gortenmulder, K.H.J. Buschow, J. Appl. Phys. 99 (2006) 08Q107]. These compounds are promising for magnetic refrigeration applications. One of the interesting points in these compounds is a nonlinear dependence of the Curie temperature (T C ) on Si concentration. This dependence is associated with the change in the lattice parameters a and c, and their ratio c/a. Compounds with larger a parameter and smaller c/a ratio have higher T C . It is clear that Si and Ge atoms play an important role in the magnetic and magnetocaloric properties in the MnFe(P, Si, Ge) compounds. In this paper, we study the effect of Si and Ge on the magnetic phase transition in these materials. Our study shows that the temperature of the phase transition, from paramagnetic to ferromagnetic, can be tuned in the room temperature range without losing giant magnetocaloric properties

  18. Pseudorapidity distributions of charged particles in d+Au and p+p collisions at {\\sqrt{s_{{\\rm NN}}} = \\rm {200 \\;GeV} }

    Science.gov (United States)

    Nouicer, Rachid; PHOBOS Collaboration; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Holynski, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L. H.; Wosiek, B.; Wozniak, K.; Wyslouch, B.; Zhang, J.

    2004-08-01

    The measured pseudorapidity distributions of primary charged particles are presented for d+Au and p+p collisions at {\\sqrt{s_{{\\rm NN}}} = \\rm {200\\;GeV} } over a wide pseudorapidity range of |eegr|les 5.4. The results for d+Au collisions are presented for minimum-bias events and as a function of collision centrality. The measurements for p+p collisions are shown for minimum-bias events. The ratio of the charged particle multiplicity in d+Au and p+A collisions relative to that for inelastic p+p collisions is found to depend only on langNpartrang, and it is remarkably independent of collision energy and system mass. The deuteron and gold fragmentation regions in d+Au collisions are in good agreement with proton nucleus data at lower energies.

  19. Selective Etching of Silicon in Preference to Germanium and Si0.5Ge0.5.

    Science.gov (United States)

    Ahles, Christopher F; Choi, Jong Youn; Wolf, Steven; Kummel, Andrew C

    2017-06-21

    The selective etching characteristics of silicon, germanium, and Si 0.5 Ge 0.5 subjected to a downstream H 2 /CF 4 /Ar plasma have been studied using a pair of in situ quartz crystal microbalances (QCMs) and X-ray photoelectron spectroscopy (XPS). At 50 °C and 760 mTorr, Si can be etched in preference to Ge and Si 0.5 Ge 0.5 , with an essentially infinite Si/Ge etch-rate ratio (ERR), whereas for Si/Si 0.5 Ge 0.5 , the ERR is infinite at 22 °C and 760 mTorr. XPS data showed that the selectivity is due to the differential suppression of etching by a ∼2 ML thick C x H y F z layer formed by the H 2 /CF 4 /Ar plasma on Si, Ge, and Si 0.5 Ge 0.5 . The data are consistent with the less exothermic reaction of fluorine radicals with Ge or Si 0.5 Ge 0.5 being strongly suppressed by the C x H y F z layer, whereas, on Si, the C x H y F z layer is not sufficient to completely suppress etching. Replacing H 2 with D 2 in the feed gas resulted in an inverse kinetic isotope effect (IKIE) where the Si and Si 0.5 Ge 0.5 etch rates were increased by ∼30 times with retention of significant etch selectivity. The use of D 2 /CF 4 /Ar instead of H 2 /CF 4 /Ar resulted in less total carbon deposition on Si and Si 0.5 Ge 0.5 and gave less Ge enrichment of Si 0.5 Ge 0.5 . These results are consistent with the selectivity being due to the differential suppression of etching by an angstrom-scale carbon layer.

  20. Properties of laser-crystallized polycrystalline SiGe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weizman, Moshe

    2008-06-06

    laser-crystallized poly-Si{sub 0.5}Ge{sub 0.5} films that can be attributed to an optical transition between D{sup +}/D{sup 0} dangling-bond states and the conduction band minimum. - The incorporation of hydrogen into the laser-crystallized poly-SiGe films by remote plasma post-treatment modified remarkably the material properties. On the one hand, it caused a transition from metallic to insulator-like conductance and reduced the ESR and the sub-band-gap absorption signals indicating that dangling-bond defects at the grain boundaries were passivated. On the other hand, it reduced the photoconductivity signal pointing to the formation of some new electrically active defects. (orig.)

  1. Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

    International Nuclear Information System (INIS)

    Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

    2013-01-01

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

  2. Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

    Science.gov (United States)

    Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

    We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

  3. Inclusive D meson production with the Mark II detector at SPEAR

    International Nuclear Information System (INIS)

    Coles, M.W.

    1980-01-01

    Neutral and charged D meson production cross sections were measured at center of mass energies between 3.9 GeV and 7.4 GeV. The quantity R/sub D/ (= [sigma/sub (D + D- + sigma/sub (D 0 - anti D 0 )]/2 sigma/sub μ + μ - /) is equal to 2 at 4 GeV and 4.4 GeV and about equal to 1 elsewhere. R/sub D/ + 2.5 approximately equals R(sigma/sub hadrons/sigma/sub μ + μ - /) at all energies. The exclusive cross section for e + e - annihilation into D anti D, D*anti D, and D*anti D* were measured at center of mass energies between 3.9 GeV and 4.3 GeV sigma/sub D*anti D*/ decreases with increasing center of mass energy from 6.6 +- 1.3 nb near 4 GeV to 3.6 +- .9 nb near 4.3 GeV. Sigma/sub D*anti D*/ also decreases from 4.2 +- .9 nb to 1.8 +- .6 nb over the same energy region. Sigma/sub D anti D/ is less than 0.5 +- .3 nb at all energies. The branching fractions for D* + and D* were measured. At 5.2 GeV, the D meson differential cross section is well described by phase space for e + e - → D anti Dππ or D*anti D*ππ. Sd sigma/dz was parameterized as A(l-z)/sup n/ with n = 0.9 +- .4. Quasi-two-body production accounts for less than 20% of the total D cross section. No evidence was found for associated charmed baryon-D meson production. An upper limit of 0.4 nb (90% confidence level) was determined for associated production

  4. Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates

    International Nuclear Information System (INIS)

    Wang, Kai; Gong, Qian; Zhou, Haifei; Kang, Chuanzhen; Yan, Jinyi; Liu, Qingbo; Wang, Shumin

    2014-01-01

    We investigated the growth of tensile-strained Ge on InAlP metamorphic templates by gas source molecular beam epitaxy. Good control of biaxial tensile strain in the Ge layer was demonstrated in the range of 0.5–2.0% by adjusting the In content of the metamorphic template. It was found that the growth of Ge was layer-by-layer (2D) even under high tensile strain of 2.0%, resulting in a smooth surface with roughness less than 1.5 nm. Hall results showed that the electron mobility of Ge increased monotonically with tensile strain.

  5. Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

    International Nuclear Information System (INIS)

    Kutsenok, N.L.; Yanson, T.I.

    1987-01-01

    X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

  6. Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

    Science.gov (United States)

    Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

    2014-03-01

    The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

  7. Electronic and magnetic properties of Si substituted Fe3Ge

    International Nuclear Information System (INIS)

    Shanavas, K. V.; McGuire, Michael A.; Parker, David S.

    2015-01-01

    Using first principles calculations, we studied the effect of Si substitution in the hexagonal Fe 3 Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the magnitude of in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. Substituting Ge with the smaller Si ions also increases the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications such as permanent magnets. Our experimental measurements on samples of Fe 3 Ge 1−x Si x confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial

  8. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    OpenAIRE

    Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau

    2013-01-01

    We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spec...

  9. Annual review 2000-2001; Rapport d'activite 2000-2001

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-07-01

    This report reviews the activities of the LAPP (particle physics laboratory of Annecy-le-Vieux) for the years 2000-2001. The central themes of research are: 1) the standard model and its extension, 2) the study of CP violation (contribution to the experiments BABAR and LHCb), 3) the search for the Higgs'boson (contribution to the experiments ALEPH, L3, ATLAS and CMS), 4) physics of neutrinos (contribution to the experiments NOMAD and OPERA), 5) the study of anti-matter and cosmic radiation (contribution to the experiment AMS and to the project EUSO embarked on the international spatial station), and 6) the search for gravitational waves (contribution to the experiment VIRGO)

  10. Measurement of the D*± meson production cross section at low and medium Q2 with the H1 detector at HERA

    International Nuclear Information System (INIS)

    Dobre, Monica

    2012-11-01

    The inclusive production of D ± (2010) mesons in deep inelastic scattering is studied using data recorded by the H1 experiment in the years 1999 to 2000 and corresponding to an integrated luminosity of 47.66 pb -1 . The measurement covers the region 2 2 2 in photon virtuality and the region 0.02 *± meson production is restricted in transverse momentum to p T (D * )>1.25 GeV and in pseudorapidity to vertical stroke η(D * ) vertical stroke <1.8. Single and double differential cross sections are compared to leading order and next-to-leading order perturbative QCD predictions.

  11. The Effectiveness of HCl and HF Cleaning of Si0.85Ge0.15 Surface

    International Nuclear Information System (INIS)

    Sun, Y

    2008-01-01

    The cleaning of Si 0.85 Ge 0.15 surfaces using HCl and HF solutions is studied using synchrotron radiation photoelectron spectroscopy. The HF solution is found to be effective in removing both the Si oxide and the Ge oxide while the HCl solution can only remove part of the Ge oxide. For samples treated with HF, four spectral components are needed to fit the Ge 3d photoemission spectra. One is the bulk component and the other three are attributed to the surface Ge atoms with mono-hydride, di-hydride and tri-hydride terminations, respectively

  12. Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

    Science.gov (United States)

    Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

    2018-01-01

    Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

  13. Strain distribution of confined Ge/GeO2 core/shell nanoparticles engineered by growth environments

    Science.gov (United States)

    Wei, Wenyan; Yuan, Cailei; Luo, Xingfang; Yu, Ting; Wang, Gongping

    2016-02-01

    The strain distributions of Ge/GeO2 core/shell nanoparticles confined in different host matrix grown by surface oxidation are investigated. The simulated results by finite element method demonstrated that the strains of the Ge core and the GeO2 shell strongly depend on the growth environments of the nanoparticles. Moreover, it can be found that there is a transformation of the strain on Ge core from tensile to compressive strain during the growth of Ge/GeO2 core/shell nanoparticles. And, the transformation of the strain is closely related with the Young's modulus of surrounding materials of Ge/GeO2 core/shell nanoparticles.

  14. Energy loss of muons in the energy range 1-10000 GeV

    International Nuclear Information System (INIS)

    Lohmann, W.; Kopp, R.; Voss, R.

    1985-01-01

    A summary is given of the most recent formulae for the cross-sections contributing to the energy loss of muons in matter, notably due to electro-magnetic interactions (ionization, bremsstrahlung and electron-pair production) and nuclear interactions. Computed energy losses dE/dx are tabulated for muons with energy between 1 GeV and 10,000 GeV in a number of materials commonly used in high-energy physics experiments. In comparison with earlier tables, these show deviations that grow with energy and amount to several per cent at 200 GeV muon energy. (orig.)

  15. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  16. Growth and characterization of isotopically enriched 70Ge and 74Ge single crystals

    International Nuclear Information System (INIS)

    Itoh, K.

    1992-10-01

    Isotopically enriched 70 Ge and 74 Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm 3 volume. To our knowledge, we have grown the first 70 Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be ∼2 x cm -3 which is two order of magnitude better that of 74 Ge crystals previously grown by two different groups. Isotopic enrichment of the 70 Ge and the 74 Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed

  17. Experimental study of spallation: neutron angular distributions induced by protons (0.8.,1.2 et 1.6 GeV) and deuterons (0.8 et 1.6 GeV) beams

    International Nuclear Information System (INIS)

    Borne, F.

    1998-01-01

    Angular distributions of spallation neutrons, produced by 0,8 to 1,6 GeV protons and 0,8 to 1,6 GeV deuterons, with two experimental and complementary techniques: the flight time measure and the use of a liquid hydrogen converter associated with a magnetic spectrometer of higher energy (2000 MeV). Experimental results obtained at Saturne (Cea) are analysed and interpreted. They allowed the determination of the neutrons production behaviour on thin targets (Al, Fe, Zr, W, Pb and Th) in function of the angle emission and the atomic number of the target and to compare the variation of neutrons production, coming from protons and incident deuterons of same total energy on a Pb target. Experimental results are compared with simulation results obtained with the TIERCE code, including Bertini and Cugnon intra-nuclear cascades. (A.L.B.)

  18. Search for associated production of charmed particles in π-p collisions at 40 GeV/c

    International Nuclear Information System (INIS)

    Apel', V.D.; Bertoluchchi, E.; Viktorov, V.A.

    1976-01-01

    At the 70 GeV IHEP accelerator a search for the associated production of charmed D mesons produced in the reaction π - p→D 0 anti D 0 n at 40 GeV/c incident pion momentum was performed. For D 0 →K 0 π 0 decay identification a system of multiwire spark and proportional chambers and hodoscopes were used, detecting Ksub(s)sup(0)→πsup(+)πsup(-) decay, and 648-channel hodoscope spectrometer with the on-line computer was used to detect γ's from π 0 decay

  19. The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

    International Nuclear Information System (INIS)

    Mahmodi, H.; Hashim, M. R.

    2010-01-01

    In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

  20. Growth and evolution of nickel germanide nanostructures on Ge(001).

    Science.gov (United States)

    Grzela, T; Capellini, G; Koczorowski, W; Schubert, M A; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J; Schroeder, T

    2015-09-25

    Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer-Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous NixGey wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the NixGey terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular NixGey 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110).

  1. Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

    Science.gov (United States)

    Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

    2012-02-01

    High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

  2. Di-hadron correlations with identified leading hadrons in 200 GeV Au + Au and d + Au collisions at STAR

    Science.gov (United States)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Averichev, G. S.; Bai, X.; Bairathi, V.; Banerjee, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, D.; Brandin, A. V.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Cervantes, M. C.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chattopadhyay, S.; Chen, X.; Chen, J. H.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; di Ruzza, B.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Engelage, J.; Eppley, G.; Esha, R.; Evdokimov, O.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Fisyak, Y.; Flores, C. E.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, S.; Gupta, A.; Guryn, W.; Hamad, A.; Hamed, A.; Haque, R.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Hofman, D. J.; Horvat, S.; Huang, T.; Huang, B.; Huang, H. Z.; Huang, X.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jang, H.; Jia, J.; Jiang, K.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z. H.; Kikoła, D. P.; Kisiel, A.; Kochenda, L.; Koetke, D. D.; Kosarzewski, L. K.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kumar, L.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, X.; Li, W.; Li, Z. M.; Li, Y.; Li, C.; Li, X.; Lisa, M. A.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Ma, G. L.; Ma, Y. G.; Ma, R.; Ma, L.; Magdy, N.; Majka, R.; Manion, A.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; McDonald, D.; Meehan, K.; Mei, J. C.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nandi, B. K.; Nasim, Md.; Nayak, T. K.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Noh, S. Y.; Novak, J.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V.; Olvitt, D.; Page, B. S.; Pak, R.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Peterson, A.; Pile, P.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Poskanzer, A. M.; Pruthi, N. K.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roy, A.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandweiss, J.; Sarkar, A.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Seger, J.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, B.; Sharma, M. K.; Shen, W. Q.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stepanov, M.; Strikhanov, M.; Stringfellow, B.; Sumbera, M.; Summa, B.; Sun, Y.; Sun, Z.; Sun, X. M.; Sun, X.; Surrow, B.; Svirida, D. N.; Szelezniak, M. A.; Tang, A. H.; Tang, Z.; Tarnowsky, T.; Tawfik, A.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vandenbroucke, M.; Varma, R.; Vasiliev, A. N.; Vertesi, R.; Videbæk, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, J. S.; Wang, F.; Wang, H.; Wang, G.; Wang, Y.; Wang, Y.; Webb, G.; Webb, J. C.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y. F.; Wu; Xiao, Z. G.; Xie, W.; Xin, K.; Xu, H.; Xu, Z.; Xu, Q. H.; Xu, Y. F.; Xu, N.; Yang, S.; Yang, Y.; Yang, Q.; Yang, Y.; Yang, C.; Yang, Y.; Ye, Z.; Ye, Z.; Yepes, P.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, Y.; Zhang, Z.; Zhang, J. B.; Zhang, J.; Zhang, X. P.; Zhang, S.; Zhang, J.; Zhao, J.; Zhong, C.; Zhou, L.; Zhu, X.; Zoulkarneeva, Y.

    2015-12-01

    The STAR Collaboration presents for the first time two-dimensional di-hadron correlations with identified leading hadrons in 200 GeV central Au + Au and minimum-bias d + Au collisions to explore hadronization mechanisms in the quark gluon plasma. The enhancement of the jet-like yield for leading pions in Au + Au data with respect to the d + Au reference and the absence of such an enhancement for leading non-pions (protons and kaons) are discussed within the context of a quark recombination scenario. The correlated yield at large angles, specifically in the ridge region, is found to be significantly higher for leading non-pions than pions. The consistencies of the constituent quark scaling, azimuthal harmonic model and a mini-jet modification model description of the data are tested, providing further constraints on hadronization.

  3. K-n and K-p elastic scattering in K-d collisions from 1.2 to 2.2 GeV/c

    International Nuclear Information System (INIS)

    Declais, Y.; Duchon, J.; Louvel, M.; Patry, J.-P.; Seguinot, J.; Baillon, P.; Bruman, C.; Ferro-Luzzi, M.; Perreau, J.-M.; Ypsilantis, T.

    1977-01-01

    This report contains the detailed description of an experiment which has determined the differential cross section of the K - n→K - n elastic scattering reaction. The results are 12 angular distributions spanning the K - n c.m. energy interval from approximately 1.86 to approximately 2.32 GeV. The measurements have been performed at the CERN PS using a beam of negative kaons with momenta from 1.2 to 2.2 GeV/c incident on a liquid deuterium target. By means of electronic apparatus the process K - d→K - n psub(s) was identified and recorded; this process is basically the same as the K - n elastic reaction insofar as the spectator proton psub(s) has low momentum. The elastic reaction was derived from the above process by taking into account the Fermi motion of the target neutron and by introducing the appropriate corrections to compensate for the effects due to the composite nature of the neutron (double-scattering, final state interaction). These results, constituting the first extensive collection of data on the pure isospin 1 anti KN state have been used in conjunction with other data in a preliminary partial wave analysis of the anti KN elastic system over the c.m. energy range from 1.84 to 2.23 GeV. Mainly for testing purposes, a similar amount of data has been collected for the K - p elastic reaction also from K - d collisions (K - d→K - p nsub(s)). (Auth.)

  4. Comercialización de productos de la PMI en la década 1990-2000

    Directory of Open Access Journals (Sweden)

    Roberto Rosero Hinestroza

    1992-01-01

    Full Text Available 1990 - 2000, una década de Apertura Económica, menor crecimiento, mayor competitividad, nueva tecnología e impostergables requerimientos de calidad total y servicio al cliente, hace necesaria la reestructuración de los sistemas comerciales de la PMI. Este informe presenta un resumen de los principales puntos de cambio para diseñar y operar con éxito las nuevas empresas comercializadoras de los actuales y futuros productos de la PMI.

  5. Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

    Directory of Open Access Journals (Sweden)

    Nigel J. Cook

    2015-03-01

    Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on  zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent

  6. Rapidity and species dependence of particle production at large transverse momentum for d+Au collisions at √ SNN = 200 GeV

    International Nuclear Information System (INIS)

    Abelev, B.I.; Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Anderson, M.; Arkhipkin, D.; Averichev, G.S.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellingeri-Laurikainen, A.; Bellwied, R.; Benedosso, F.; Bhardwaj, S.; Bhasin, A.; Bhati, A.K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Bland, L.C.; Blyth, S.-L.; Bonner, B.E.; Botje, M.; Bouchet, J.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Castillo, J.; Catu, O.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, J.H.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cosentino, M.R.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; Daugherity, M.; de Moura, M.M.; Dedovich, T.G.; DePhillips, M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Djawotho, P.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fu, J.; Gagliardi, C.A.; Gaillard, L.; Ganti, M.S.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.S.; Gorbunov, Y.G.; Gos, H.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guimaraes, K.S.F.F.; Guo, Y.; Gupta, N.; Gutierrez, T.D.; Haag, B.; Hallman, T.J.; Hamed, A.; Harris, J.W.; He, W.; Heinz, M.; Henry, T.W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A.M.; Hoffmann, G.W.; Horner, M.J.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Jacobs, P.; Jacobs, W.W.; Jakl, P.; Jia, F.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kapitan, J.; Kaplan, M.; Keane, D.; Kechechyan, A.; Khodyrev, V.Yu.; Kim, B.C.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klein, S.R.; Kocoloski, A.; Koetke, D.D.

    2006-01-01

    We determine rapidity asymmetry in the production of charged pions, protons and anti-protons for large transverse momentum (p T ) for d+Au collisions at √s NN = 200 GeV. The rapidity asymmetry is defined as the ratio of particle yields at backward rapidity (Au beam direction or -ve rapidity) to those at forward rapidity (d beam direction or +ve rapidity). The identified hadrons are measured in the rapidity regions |y| T range 2.5 T - /π + and (bar p)/p ratios in peripheral d+Au and forward neutron-tagged events are used to study the contributions of valence quarks and gluons to particle production at high p T . The results are compared to calculations based on NLO pQCD and other measurements of quark fragmentation functions

  7. Evidence for a narrow peak in $K0_{S}\\pi \\pm \\pi^{+}pi^{-}$ at 2.6 GeV in 12 GeV/c $\\overline{p}$p interactions

    CERN Document Server

    Apostolakis, Alcibiades J; Caso, Carlo; Goldschmidt-Clermont, Yves; Pape, L; Porte, J P; Stergiou, Athanase; Tallini, Bruno; Vasileiadis, G; Wenninger, Horst; Grard, G; Henri, V P; Herquet, P; Kesteman, J; Banerjee, S; Barnham, Keith W J; Beuselinck, R; Butterworth, Ian; Campbell, J Ronald; Chaff, J A; Mermikides, Michael E; Miller, D B; Bertrand, D; Johnson, D; Lemonne, J; Renton, P B; Wickens, J H; Van den Bogaert, F; Daugeras, B Y; Jacholkowska, A

    1977-01-01

    The authors report the evidence for a narrow charged peak (5.5 s.d.), which they suggest calling the I, in the 6-prong-V/sup 0/ topology of pp interactions at 12 GeV/c. The mass, width and the product of cross section sigma /sub I/ times the branching ratio BR into the final state (K/sub s//sup 0/ pi /sup +or-/ pi /sup +/ pi /sup -/) are found to be: M/sub I/=2.60+or-0.01 GeV/c/sup 2/, Gamma /sub I/GeV /c/sup 2/, sigma /sub I/.BR approximately=20 mu barn. (5 refs).

  8. X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound

    Science.gov (United States)

    Shcherba, I. D.; Kostyk, L. V.; Noga, H.; Bekenov, L. V.; Uskokovich, D.; Jatsyk, B. M.

    2017-09-01

    The band structure of Ca3Ga2Ge3О12 with the garnet structure has been determined for the first time by X-ray emission and photoelectron spectroscopy. It has been established that the bottom of the valence band is formed by Ge d states, which are not dominant in the chemical bonding. Strong hybridization of oxygen 2s states with 4p states of Ga and Ge revealed by the presence of an extra structure in the X-ray emission spectra has been found. The middle of the valence band has been demonstrated to be occupied by d states of Ga, while Ga and Ge 4рstates with a considerable admixture of oxygen 2p states form the top of the valence band.

  9. Influence of the Localization of Ge Atoms within the Si(001(4 × 2 Surface Layer on Semicore One-Electron States

    Directory of Open Access Journals (Sweden)

    Olha I. Tkachuk

    2016-03-01

    Full Text Available Adsorption complexes of germanium on the reconstructed Si(001(4 × 2 surface have been simulated by the Si96Ge2Н84 cluster. For Ge atoms located on the surface layer, DFT calculations (B3LYP/6-31G** of their 3d semicore-level energies have shown a clear-cut correlation between the 3d5/2 chemical shifts and mutual arrangement of Ge atoms. Such a shift is positive when only one Ge atom penetrates into the crystalline substrate, while being negative for both penetrating Ge atoms. We interpret these results in terms of the charge distribution in clusters under consideration.

  10. The crystallization of amorphous Fe2MnGe powder prepared by ball milling

    International Nuclear Information System (INIS)

    Zhang, L.; Brueck, E.; Tegus, O.; Buschow, K.H.J.; Boer, F.R. de

    2003-01-01

    We synthesized for the first time the intermetallic compound Fe 2 MnGe. To avoid preferential evaporation of volatile components we exploited mechanical alloying. Amorphous Fe 2 MnGe alloy powder was prepared by planetary ball milling elemental starting materials. The amorphous-to-crystalline transition was studied by means of differential scanning calorimetry (DSC) and X-ray diffraction (XRD). A cubic D0 3 phase is formed at low temperature and transforms to a high-temperature hexagonal D0 19 phase. The apparent activation energy was determined by means of the Kissinger method

  11. Baryon resonances - a primary ρ→l+l- source in p+p and p+d at 4.9GeV

    International Nuclear Information System (INIS)

    Winckelmann, L.A.; Sorge, H.; Stoecker, H.; Greiner, W.

    1994-10-01

    Dilepton spectra for p+p and p+d reactions at 4.9 GeV are calculated. We consider electromagnetic bremsstrahlung also in inealstic reactions. N* and Δ* decays present the major contributions to the q and ω meson yields. Pion annihilation yields only ∼1.5% of all ρ's in p+d. The ρ mass spectrum is strongly distorted due to phase space effects, populating dominantly dilepton masses below 770 MeV. It is found that inclusive production cross sections of ρ, ω and η mesons in p+p are 3-4 times higher than the (measured) exclusive cross sections for pp+meson. This prediction could be checked by measuring the decays of ρ, ω and η mesons into photons. (orig.)

  12. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  13. Analyses of (0.5part>)-1dNch/dη distributions of PHOBOS and BRAHMS collaborations by means of a stochastic process

    International Nuclear Information System (INIS)

    Biyajima, M.; Ide, M.; Mizoguchi, T.; Suzuki, N.

    2002-01-01

    Recently interesting data on dN ch /dη in Au-Au collisions (η=-ln tan(θ/2)) with the centrality cuts have been reported by PHOBOS and BRAHMS Collaborations. Their data are usually divided by the number of participants (nucleons) in collisions. Instead of this way, using the total multiplicity N ch =∫(dN ch /dη)dη, we find that there are scaling phenomena among (N ch ) -1 dN ch /dη=dn/dη with different centrality cuts at √s NN = 130 GeV and 200 GeV, respectively. To explain these scaling behaviors of dn/dη, we consider the stochastic approach named Ornstein-Uhlenbeck process with two sources. The Langevin equation is adopted for the present explanation. Among dn/dη at 130 GeV and 200 GeV, no significant difference has been found. Possible detection method of the quark-gluon plasma (QGP) through dN ch /dη is presented. (author)

  14. The effects of Sn addition on properties and structure in Ge-Se chalcogenide glass

    Science.gov (United States)

    Fayek, S. A.

    2005-01-01

    Far infrared transmission spectra of homogeneous compositions in the glassy alloy system Ge 1- xSn xSe 2.5 0⩽ x⩽0.6 have been observed in the spectral range 200-500 cm -1 at room temperature. The infrared absorption spectra show strong bands around 231, 284 and 311 cm -1 which were assigned to GeSe, SeSn, Se-Se. Tin atoms appear to substitute for the germanium atoms in the outrigger sites of Ge(Se 1/2) 4 tetrahedra up to 0.4. For x>0.5, the glasses show a new vibrational band of an isolated F 2 mode of the Ge-centered tetrahedra outside the clusters. A pronounced peculiarity (maximum or minimum) appeared at around the same value of the average coordination number at Z=2.65 for all composition dependence topological phase transition from two-dimensional (2D) layer type to three- dimensional (3D) cross-linked network structures in the glass. It is clear that the theoretical ν-values for Se-Se bond is less than the experimental one and that for Se-Ge is greater than the experimental one. This difference may be due to the existence of more close lying modes which tends to broaden the absorption bands. Quantitative justification of the absorption bands shows that theoretical wave numbers agree with its experimental values for Ge-Se stretching vibration bond.

  15. Search for Supersymmetry with a dominant R-Parity violating $LQ\\overline{D}$ Coupling in $e^{+}e^{-}$ Collisions at centre-of-mass energies of 130 GeV to 172 GeV

    CERN Document Server

    Barate, R.; Decamp, D.; Ghez, Philippe; Goy, C.; Jezequel, S.; Lees, J.P.; Lucotte, A.; Martin, F.; Merle, E.; Minard, M.N.; Nief, J.Y.; Perrodo, P.; Pietrzyk, B.; Alemany, R.; Casado, M.P.; Chmeissani, M.; Crespo, J.M.; Delfino, M.; Fernandez, E.; Fernandez-Bosman, M.; Garrido, L.; Grauges, E.; Juste, A.; Martinez, M.; Merino, G.; Miquel, R.; Mir, L.M.; Morawitz, P.; Pacheco, A.; Park, I.C.; Pascual, A.; Riu, I.; Sanchez, F.; Colaleo, A.; Creanza, D.; De Palma, M.; Gelao, G.; Iaselli, G.; Maggi, G.; Maggi, M.; Nuzzo, S.; Ranieri, A.; Raso, G.; Ruggieri, F.; Selvaggi, G.; Silvestris, L.; Tempesta, P.; Tricomi, A.; Zito, G.; Huang, X.; Lin, J.; Ouyang, Q.; Wang, T.; Xie, Y.; Xu, R.; Xue, S.; Zhang, J.; Zhang, L.; Zhao, W.; Abbaneo, D.; Becker, U.; Boix, G.; Cattaneo, M.; Cerutti, F.; Ciulli, V.; Dissertori, G.; Drevermann, H.; Forty, R.W.; Frank, M.; Gianotti, F.; Hagelberg, R.; Halley, A.W.; Hansen, J.B.; Harvey, John; Janot, P.; Jost, B.; Lehraus, I.; Leroy, O.; Maley, P.; Mato, P.; Minten, A.; Moneta, L.; Moutoussi, A.; Ranjard, F.; Rolandi, Gigi; Rousseau, D.; Schlatter, D.; Schmitt, M.; Schneider, O.; Tejessy, W.; Teubert, F.; Tomalin, I.R.; Tournefier, E.; Vreeswijk, M.; Wachsmuth, H.; Ajaltouni, Z.; Badaud, F.; Chazelle, G.; Deschamps, O.; Dessagne, S.; Falvard, A.; Ferdi, C.; Gay, P.; Guicheney, C.; Henrard, P.; Jousset, J.; Michel, B.; Monteil, S.; Montret, J.C.; Pallin, D.; Perret, P.; Podlyski, F.; Hansen, J.D.; Hansen, J.R.; Hansen, P.H.; Nilsson, B.S.; Rensch, B.; Waananen, A.; Daskalakis, G.; Kyriakis, A.; Markou, C.; Simopoulou, E.; Vayaki, A.; Blondel, A.; Brient, J.C.; Machefert, F.; Rouge, A.; Rumpf, M.; Tanaka, R.; Valassi, A.; Videau, H.; Focardi, E.; Parrini, G.; Zachariadou, K.; Cavanaugh, R.; Corden, M.; Georgiopoulos, C.; Huehn, T.; Jaffe, D.E.; Antonelli, A.; Bencivenni, G.; Bologna, G.; Bossi, F.; Campana, P.; Capon, G.; Chiarella, V.; Laurelli, P.; Mannocchi, G.; Murtas, F.; Murtas, G.P.; Passalacqua, L.; Pepe-Altarelli, M.; Chalmers, M.; Curtis, L.; Lynch, J.G.; Negus, P.; O'Shea, V.; Raine, C.; Scarr, J.M.; Teixeira-Dias, P.; Thompson, A.S.; Thomson, Evelyn J.; Ward, J.J.; Buchmuller, O.; Dhamotharan, S.; Geweniger, C.; Hanke, P.; Hansper, G.; Hepp, V.; Kluge, E.E.; Putzer, A.; Sommer, J.; Tittel, K.; Werner, S.; Wunsch, M.; Beuselinck, R.; Binnie, D.M.; Cameron, W.; Dornan, P.J.; Girone, M.; Goodsir, S.; Marinelli, N.; Martin, E.B.; Nash, J.; Sedgbeer, J.K.; Spagnolo, P.; Williams, M.D.; Ghete, V.M.; Girtler, P.; Kneringer, E.; Kuhn, D.; Rudolph, G.; Betteridge, A.P.; Bowdery, C.K.; Buck, P.G.; Colrain, P.; Crawford, G.; Ellis, G.; Finch, A.J.; Foster, F.; Hughes, G.; Jones, R.W.L.; Robertson, A.N.; Williams, M.I.; van Gemmeren, P.; Giehl, I.; Hoffmann, C.; Jakobs, K.; Kleinknecht, K.; Krocker, M.; Nurnberger, H.A.; Quast, G.; Renk, B.; Rohne, E.; Sander, H.G.; Schmeling, S.; Zeitnitz, C.; Ziegler, T.; Aubert, J.J.; Benchouk, C.; Bonissent, A.; Carr, J.; Coyle, P.; Ealet, A.; Fouchez, D.; Motsch, F.; Payre, P.; Talby, M.; Thulasidas, M.; Tilquin, A.; Aleppo, M.; Antonelli, M.; Ragusa, F.; Berlich, R.; Buescher, Volker; Dietl, H.; Ganis, G.; Huttmann, K.; Lutjens, G.; Mannert, C.; Manner, W.; Moser, H.G.; Schael, S.; Settles, R.; Seywerd, H.; Stenzel, H.; Wiedenmann, W.; Wolf, G.; Boucrot, J.; Callot, O.; Chen, S.; Davier, M.; Duflot, L.; Grivaz, J.F.; Heusse, P.; Hocker, Andreas; Jacholkowska, A.; Kado, M.; Kim, D.W.; Le Diberder, F.; Lefrancois, J.; Serin, L.; Veillet, J.J.; Videau, I.; de Vivie de Regie, J.B.; Zerwas, D.; Azzurri, P.; Bagliesi, Giuseppe; Bettarini, S.; Boccali, T.; Bozzi, C.; Calderini, G.; Dell'Orso, R.; Fantechi, R.; Ferrante, I.; Giassi, A.; Gregorio, A.; Ligabue, F.; Lusiani, A.; Marrocchesi, P.S.; Messineo, A.; Palla, F.; Rizzo, G.; Sanguinetti, G.; Sciaba, A.; Sguazzoni, G.; Tenchini, R.; Vannini, C.; Venturi, A.; Verdini, P.G.; Blair, G.A.; Chambers, J.T.; Coles, J.; Cowan, G.; Green, M.G.; Medcalf, T.; Strong, J.A.; von Wimmersperg-Toeller, J.H.; Botterill, D.R.; Clifft, R.W.; Edgecock, T.R.; Norton, P.R.; Thompson, J.C.; Wright, A.E.; Bloch-Devaux, Brigitte; Colas, P.; Fabbro, B.; Faif, G.; Lancon, E.; Lemaire, M.C.; Locci, E.; Perez, P.; Przysiezniak, H.; Rander, J.; Renardy, J.F.; Rosowsky, A.; Trabelsi, A.; Tuchming, B.; Vallage, B.; Black, S.N.; Dann, J.H.; Kim, H.Y.; Konstantinidis, N.; Litke, A.M.; McNeil, M.A.; Taylor, G.; Booth, C.N.; Cartwright, S.; Combley, F.; Kelly, M.S.; Lehto, M.; Thompson, L.F.; Affholderbach, K.; Boehrer, Armin; Brandt, S.; Foss, J.; Grupen, C.; Prange, G.; Smolik, L.; Stephan, F.; Giannini, G.; Gobbo, B.; Putz, J.; Rothberg, J.; Wasserbaech, S.; Williams, R.W.; Armstrong, S.R.; Charles, E.; Elmer, P.; Ferguson, D.P.S.; Gao, Y.; Gonzalez, S.; Greening, T.C.; Hayes, O.J.; Hu, H.; Jin, S.; McNamara, P.A.; Nachtman, J.M.; Nielsen, J.; Orejudos, W.; Pan, Y.B.; Saadi, Y.; Scott, I.J.; Walsh, J.; Wu, S.L.; Wu, X.; Zobernig, G.

    1999-01-01

    A search for pair-production of supersymmetric particles under the assumption that R-parity is violated via a dominant LQDbar coupling has been performed using the data collected by ALEPH at centre-of-mass energies of 130-172 GeV. The observed candidate events in the data are in agreement with the Standard Model expectation. This result is translated into lower limits on the masses of charginos, neutralinos, sleptons, sneutrinos and squarks. For instance, for m_0=500 GeV/c^2 and tan(beta)=sqrt(2) charginos with masses smaller than 81 GeV/c^2 and neutralinos with masses smaller than 29 GeV/c^2 are excluded at the 95% confidence level for any generation structure of the LQDbar coupling.

  16. Production of H, D (2s, 2p) by electron impact (0-2000 eV) on simple hydrogen containing molecules

    International Nuclear Information System (INIS)

    Moehlmann, G.R.; Shima, K.H.; Heer, F.J. de

    1978-01-01

    Absolute emission cross sections of Ly-α (H, D (2p → 1s)) radiation have been determined for 0-2000 eV electrons incident on H 2 , HD, D 2 , HCl, H 2 O, NH 3 and CH 4 . By means of the application of electric quenching the excitation cross sections of H, D (2s) could be obtained from the increase of the resulting Ly-α radiation for these molecules. It was found that only for H 2 , HD and D 2 fragments in the H (2s) state are formed. (Auth.)

  17. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  18. JETCAL 2000R Analyzer H337PA-603 Operational Test and Evaluation (OT&E) on H-53 E/J Aircraft and H46 D/E Aircraft

    Science.gov (United States)

    2003-01-28

    Proposal Title PORTABLE TEST CELL - JETCAL 2000(R) Lead Proposer HOWELL INSTRUMENTS Military Customer NAVY/MARINE H53...B-4 Proposal Title PORTABLE TEST CELL - JETCAL 2000(R) Lead Proposer HOWELL INSTRUMENTS Military Customer...TEST CELL - JETCAL 2000(R) Lead Proposer HOWELL INSTRUMENTS Military Customer NAVY/MARINE H53 AIRCRAFT Baseline Costs -- DoD’s Costs When COSSI is NOT

  19. Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

    Science.gov (United States)

    Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

    2017-06-01

    We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

  20. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  1. Charm and beauty production in D{sup *}{mu} events at H1/HERA

    Energy Technology Data Exchange (ETDEWEB)

    Lucaci-Timoce, A.I.

    2007-07-15

    Charm and beauty photoproduction is investigated with the H1 detector at HERA using events with a reconstructed D{sup *} meson and a muon. Data taken during the years 1999-2000 and 2004-2006, corresponding to a total integrated luminosity of 320 pb{sup -1}, are analysed. The D{sup *} mesons with transverse momentum p{sub t}(D{sup *})>1.5 GeV and pseudorapidity vertical stroke {eta}(D{sup *}) vertical stroke <1.5 are reconstructed via the decay channel D{sup *{+-}}{yields}D{sup (-)0}{pi}{sub s}{sup {+-}}{yields}(K{sup -+}{pi}{sup {+-}}){pi}{sub s}{sup {+-}}. In addition, muons with momentum p({mu})>2 GeV and vertical stroke {eta}({mu}) vertical stroke <1.735 are selected. With this selection, the contribution of light quark initiated events is negligible. The fractions of charm and beauty events in data are extracted exploiting the charge and azimuthal angle correlation between the D{sup *} meson and the muon. The charm and beauty cross sections were measured in photoproduction, i.e. for photon virtualities Q{sup 2}<1 GeV{sup 2}, and for inelasticities 0.05D{sup *{+-}}{mu}X)=314{+-}33(stat){+-}101(syst)pb {sigma}{sub vis}(ep{yields}eb anti bX{yields}eD{sup *{+-}}{mu}X)=90{+-}20(stat){+-}26(syst)pb. The measurements are compared to leading order QCD calculations supplemented with parton showers as predicted by the PYTHIA Monte Carlo event generator. A ratio data/theory of 1.2{+-}0.1(stat){+-}0.4(syst) and of 1.3{+-}0.3(stat){+-}0.4(syst) is obtained for charm and beauty, respectively. Differential cross sections for the variables describing the D{sup *}{mu} system like transverse momentum p{sub t}(D{sup *}{mu}), pseudorapidity {eta}(D{sup *}{mu}), invariant mass M(D{sup *}{mu}) and inelasticity y(D{sup *}{mu}) are measured and compared to the PYTHIA and the CASCADE Monte Carlo event generators. The theoretical models describe the shape of the differential distributions. Transverse momentum studies of the D

  2. [Quality system Vision 2000].

    Science.gov (United States)

    Pasini, Evasio; Pitocchi, Oreste; de Luca, Italo; Ferrari, Roberto

    2002-12-01

    A recent document of the Italian Ministry of Health points out that all structures which provide services to the National Health System should implement a Quality System according to the ISO 9000 standards. Vision 2000 is the new version of the ISO standard. Vision 2000 is less bureaucratic than the old version. The specific requests of the Vision 2000 are: a) to identify, to monitor and to analyze the processes of the structure, b) to measure the results of the processes so as to ensure that they are effective, d) to implement actions necessary to achieve the planned results and the continual improvement of these processes, e) to identify customer requests and to measure customer satisfaction. Specific attention should be also dedicated to the competence and training of the personnel involved in the processes. The principles of the Vision 2000 agree with the principles of total quality management. The present article illustrates the Vision 2000 standard and provides practical examples of the implementation of this standard in cardiological departments.

  3. Measurement of D{sup *{+-}} production at low Q{sup 2} with the beam-pipe calorimeter of ZEUS at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Irrgang, P

    2004-12-01

    The production of D* mesons in deep-inelastic ep-scattering has been studied using the ZEUS detector at HERA. The total D* production cross-section and the differential cross-sections as functions of Q{sup 2}, y, p{sub t}(D*) and {eta}(D*) have been measured at low Q{sup 2}. The data sample used was collected during the period 1998-2000 and amounts to an integrated luminosity of 82.2 pb{sup -1}. The low Q{sup 2} region could be reached using the beam-pipe calorimeter which measures the scattered electron at very small angles. Therefore special emphasis was put on the calibration of the BPC in order to reconstruct events in the kinematic range 0.05 < Q{sup 2} < 0.7 GeV{sup 2} and 0.02 < y < 0.85. The D* mesons have been identified via the decay into lighter mesons D{sup *}+{yields}K{sup -}{pi}{sup +}{pi}{sup -} and the charged conjugated decay in the kinematic region 1.5D*)<9.0 GeV and -1.5<{eta}(D*)<1.5. The measured cross-sections are in agreement with the predictions from perturbative QCD calculations. Previous ZEUS D* production measurements could be extended towards lower values of Q{sup 2} in agreement with the corresponding perturbative QCD predictions. (orig.)

  4. Cryocooler and Thermal Systems for Improved GeD Gamma-ray Imaging and Spectroscopy

    Data.gov (United States)

    National Aeronautics and Space Administration — Place Germanium detectors (GeDs) in a few-MeV γ-ray Compton instrument on a satellite will enable unprecedented insight into nuclear astrophysics, key multimessenger...

  5. Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Kim, H.; Greene, J.E. [Materials Science Department, the Coordinated Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

    1999-03-01

    Ultrahigh B-doped Ge(001) layers, with concentrations C{sub B} up to 8{times}10{sup 21} cm{sup {minus}3}, were grown by gas-source molecular beam epitaxy from Ge{sub 2}H{sub 6} and B{sub 2}H{sub 6} at temperatures T{sub s}=325{degree}C (in the surface-reaction-limited regime) and 600{degree}C (in the flux-limited regime). The samples were quenched, D site exchanged for H, and D{sub 2} temperature-programed desorption (TPD) used to determine B coverages {theta}{sub B} as a function of C{sub B} and T{sub s} by comparison with B-adsorbed Ge(001) reference samples with known {theta}{sub B} values. During Ge(001):B film growth, strong surface B segregation to the second layer was observed with surface-to-bulk B concentration ratios ranging up to 6000. The TPD spectra exhibited {alpha}{sub 2} and {alpha}{sub 1} peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced {alpha}{sub 2}{sup {asterisk}} and {alpha}{sub 1}{sup {asterisk}} peaks associated with deuterium desorption from Ge{sup {asterisk}} surface atoms with B backbonds. Increasing {theta}{sub B} expanded the area under {alpha}{sub 2}{sup {asterisk}} and {alpha}{sub 1}{sup {asterisk}} at the expense of {alpha}{sub 2} and {alpha}{sub 1} and decreased the total D coverage {theta}{sub D}. The TPD results were used to determine the B segregation enthalpy, {minus}0.64 eV, and to explain and model the effects of high B coverages on Ge(001) growth kinetics. At T{sub s}=325{degree}C, where B segregation is kinetically hindered, film deposition rates R{sub Ge} are not a strong function of C{sub B}, exhibiting only a small decrease at C{sub B}{approx_gt}5{times}10{sup 18} cm{sup {minus}3}. However, at T{sub s}=600{degree}C, R{sub Ge} decreases by up to 40{percent} with increasing C{sub B}{approx_gt}1{times}10{sup 18} cm{sup {minus}3}. This is due primarily to the combination of B-induced Ge dimer vacancies and the deactivation of surface dangling bonds caused by charge transfer

  6. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    International Nuclear Information System (INIS)

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  7. Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

    Science.gov (United States)

    Nahali, Masoud; Mehri, Ali

    2018-06-01

    The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

  8. Expression of variable viruses as herpes simplex glycoprotein D and varicella zoster gE glycoprotein using a novel plasmid based expression system in insect cell

    Directory of Open Access Journals (Sweden)

    A.M. Al-Sulaiman

    2017-11-01

    Full Text Available Several prokaryotic and eukaryotic expression systems have been used for in vitro production of viruses’ proteins. However eukaryotic expression system was always the first choice for production of proteins that undergo post-translational modification such as glycosylation. Recombinant baculoviruses have been widely used as safe vectors to express heterologous genes in the culture of insect cells, but the manipulation involved in creating, titrating, and amplifying viral stocks make it time consuming and laborious. Therefore, to facilitate rapid expression in insect cell, a plasmid based expression system was used to express herpes simplex type 1 glycoprotein D (HSV-1 gD and varicella zoster glycoprotein E (VZV gE. Recombinant plasmids were generated, transfected into insect cells (SF9, and both glycoproteins were expressed 48 h post-infection. A protein with approximately molecular weight of 64-kDa and 98-kDa for HSV-1 gD and VZV gE respectively was expressed and confirmed by SDS. Proteins were detected in insect cells cytoplasm and outer membrane by immunofluorescence. The antigenicity and immunoreactivity of each protein were confirmed by immunoblot and ELISA. Results suggest that this system can be an alternative to the traditional baculovirus expression for small scale expression system in insect cells.

  9. Electronic and magnetic properties of Si substituted Fe{sub 3}Ge

    Energy Technology Data Exchange (ETDEWEB)

    Shanavas, K. V., E-mail: kavungalvees@ornl.gov; McGuire, Michael A.; Parker, David S. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056 (United States)

    2015-09-28

    Using first principles calculations, we studied the effect of Si substitution in the hexagonal Fe{sub 3}Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the magnitude of in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. Substituting Ge with the smaller Si ions also increases the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications such as permanent magnets. Our experimental measurements on samples of Fe{sub 3}Ge{sub 1−x}Si{sub x} confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.

  10. Di-hadron correlations with identified leading hadrons in 200 GeV Au+Au and d+Au collisions at STAR

    Directory of Open Access Journals (Sweden)

    L. Adamczyk

    2015-12-01

    Full Text Available The STAR Collaboration presents for the first time two-dimensional di-hadron correlations with identified leading hadrons in 200 GeV central Au+Au and minimum-bias d+Au collisions to explore hadronization mechanisms in the quark gluon plasma. The enhancement of the jet-like yield for leading pions in Au+Au data with respect to the d+Au reference and the absence of such an enhancement for leading non-pions (protons and kaons are discussed within the context of a quark recombination scenario. The correlated yield at large angles, specifically in the ridge region, is found to be significantly higher for leading non-pions than pions. The consistencies of the constituent quark scaling, azimuthal harmonic model and a mini-jet modification model description of the data are tested, providing further constraints on hadronization.

  11. Di-hadron correlations with identified leading hadrons in 200 GeV Au + Au and d + Au collisions at STAR

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, L; Adkins, JK; Agakishiev, G; Aggarwal, MM; Ahammed, Z; Alekseev, I; Aparin, A; Arkhipkin, D; Aschenauer, EC; Averichev, GS; Bai, X; Bairathi, V; Banerjee, A; Bellwied, R; Bhasin, A; Bhati, AK; Bhattarai, P; Bielcik, J; Bielcikova, J; Bland, LC; Bordyuzhin, IG; Bouchet, J; Brandenburg, D; Brandin, AV; Bunzarov, I; Butterworth, J; Caines, H; Calderón de la Barca Sánchez, M; Campbell, JM; Cebra, D; Cervantes, MC; Chakaberia, I; Chaloupka, P; Chang, Z; Chattopadhyay, S; Chen, X; Chen, JH; Cheng, J; Cherney, M; Christie, W; Contin, G; Crawford, HJ; Das, S; De Silva, LC; Debbe, RR; Dedovich, TG; Deng, J; Derevschikov, AA; di Ruzza, B; Didenko, L; Dilks, C; Dong, X; Drachenberg, JL; Draper, JE; Du, CM; Dunkelberger, LE; Dunlop, JC; Efimov, LG; Engelage, J; Eppley, G; Esha, R; Evdokimov, O; Eyser, O; Fatemi, R; Fazio, S; Federic, P; Fedorisin, J; Feng, Z; Filip, P; Fisyak, Y; Flores, CE; Fulek, L; Gagliardi, CA; Garand, D; Geurts, F; Gibson, A; Girard, M; Greiner, L; Grosnick, D; Gunarathne, DS; Guo, Y; Gupta, S; Gupta, A; Guryn, W; Hamad, A; Hamed, A; Haque, R; Harris, JW; He, L; Heppelmann, S; Heppelmann, S; Hirsch, A; Hoffmann, GW; Hofman, DJ; Horvat, S; Huang, T; Huang, B; Huang, HZ; Huang, X; Huck, P

    2015-10-23

    The STAR Collaboration presents for the first time two-dimensional di-hadron correlations with identified leading hadrons in 200 GeV central Au + Au and minimum-bias d + Au collisions to explore hadronization mechanisms in the quark gluon plasma. The enhancement of the jet-like yield for leading pions in Au + Au data with respect to the d + Au reference and the absence of such an enhancement for leading non-pions (protons and kaons) are discussed within the context of a quark recombination scenario. The correlated yield at large angles, specifically in the ridge region, is found to be significantly higher for leading non-pions than pions. The consistencies of the constituent quark scaling, azimuthal harmonic model and a mini-jet modification model description of the data are tested, providing further constraints on hadronization.

  12. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

  13. Water-vapor-enhanced growth of Ge-GeOx core-shell nanowires and Si1-xGexOy nanowires

    International Nuclear Information System (INIS)

    Hsu, T-J; Ko, C-Y; Lin, W-T

    2007-01-01

    The effects of moist Ar on the growth of Ge-GeO x core-shell nanowires (Ge-GeO x NWs) and Si 1-x Ge x O y nanowires (SiGeONWs) on Si substrates without adding a metal catalyst via the carbothermal reduction of GeO 2 powders at 1100 deg. C were studied. No significant nanowires were grown in dry Ar at a flow rate of 100-300 sccm until a bit of water in the range of 0.5-2 ml was loaded into the furnace. More water suppressed the growth of nanowires because of the exhaustion of more graphite powder. The growth of Ge-GeO x NWs and SiGeONWs follows the vapor-solid and vapor-liquid-solid processes, respectively. The present study showed that the water vapor serves as an oxidizer as well as a reducer at 1100 deg. C in enhancing the growth of SiGeONWs and Ge-GeO x NWs, respectively. The growth mechanisms of Ge-GeO x NWs and SiGeONWs are also discussed

  14. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    International Nuclear Information System (INIS)

    Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

    2014-01-01

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

  15. Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

    Science.gov (United States)

    Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

    2018-01-01

    The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

  16. RIKEN-JAERI 8-GeV synchrotron radiation project - SPring-8

    International Nuclear Information System (INIS)

    Awaya, Yohko

    1990-01-01

    The plan of an 8-GeV synchrotron radiation facility, which is called SPring-8 (Super Photon Ring-8GeV), had been proposed by Science and Technology Agency (STA) in Japan and it was decided that its construction would be started from April 1990. An atomic physics group in Japan had the first meeting in December 1988 to discuss the future studies of atomic physics and related problems at SPring-8 and plans of research and development (R and D) for them. Their report was published in May 1990. In this report, an outline of SPring-8 is described. Results of the discussions of Japanese working group of atomic physics and the present status of R and D of this group will be presented by M. Kimura in this workshop

  17. Are phantoms useful for predicting the potential of dose reduction in full-field digital mammography?

    International Nuclear Information System (INIS)

    Gennaro, Gisella; Katz, Luc; Souchay, Henri; Alberelli, Claudio; Maggio, Cosimo di

    2005-01-01

    A phantom study was performed in full-field digital mammography to investigate the opportunity and the magnitude of a possible dose reduction that would leave the image quality above the accepted thresholds associated with some classical phantoms. This preliminary work is intended to lay the groundwork for a future clinical study on the impact of dose reduction on clinical results. Three different mammography phantoms (ACR RMI 156, CIRS 11A and CDMAM 3.4) were imaged by a full-field digital mammography unit (GE Senographe 2000D) at different dose levels. Images were rated by three observers with softcopy reading and scoring methods specific to each phantom. Different types of data analysis were applied to the ACR (American College of Radiology) and the other two phantoms, respectively. With reference to the minimum acceptance score in screen/film accreditation programmes, the ACR phantom showed that about 45% dose reduction could be applied, while keeping the phantom scores above that threshold. A relative comparison was done for CIRS and CDMAM, for which no threshold is defined. CIRS scoring remained close to the reference level down to 40% dose reduction, the inter- and intra-observer variability being the main source of uncertainty. Contrast-detail curves provided by CDMAM overlapped down to 50% dose reduction, at least for object contrast values ranging between 30% and 3%. This multi-phantom study shows the potential of further reducing the dose in full-field digital mammography beyond the current values. A common dose reduction factor around 50% seems acceptable for all phantoms. However, caution is required before extrapolating the results for clinical use, given the limitations of these widely used phantoms, mainly related to their limited dynamic range and uniform background

  18. Caracterisitiques des patients tuberculeux à l'ouest cameroun: 2000-2009

    Science.gov (United States)

    Noubom, Michel; Nembot, Fabrice Djouma; Donfack, Hubert; Mfin, Patrick Stéphane Kouomboua; Tchasse, Floriane

    2013-01-01

    Introduction La tuberculose (TB) reste de nos jours un problème majeur de santé publique dans les pays en voie de développement. Elle devient de plus en plus importante à cause de l'infection au VIH. Cette étude avait pour but de caractériser les patients admis dans le plus grand Centre de Diagnostic et de Traitement de la Tuberculose (CDT) de l'Ouest Cameroun entre 2000 et 2009. Méthodes Les patients de 15 ans et plus admis au CDT de Baleng durant la période allant du 1er janvier 2000 au 31 décembre 2009 ont été inclus. Les données ont étés collectées grâce à une grille pré conçue. Le calcul des fréquences, moyennes et les comparaisons de groupes ont été faites pour ressortir les caractéristiques des participants. Résultats 2556 patients ont été inclus dans l’étude. 64,8% étaient de sexe masculin et l’âge médian étaient de 33ans. 2141 (83,7%) de patients présentaient une TPM+, 319 (12,5%) une TPM- et 96 (3,8%) une TEP. 64,7% des patients résidaient hors du district de santé d'implantation du CDT. 79,16% de patients tuberculeux ont fait le test de dépistage du VIH et la séroprévalence chez ceux testés était de 26,06%. Les différentes évolutions en fin de période de suivi de chaque patient ont été les suivantes: évolution favorable (guéri et traitement terminé) 1954(76,6%); perdus de vue 231(9,0%); décès 230(9,0%); transféré 92(3,6%); échec 49(1,9%). Conclusion Une proportion considérable de patients résident loin du CDT ce qui augmenterait le perdus de vue et les transferts pendant le traitement. En plus vulgariser les autres CDT de la région, il est nécessaire de renforcer le système de transfert pour éviter les perdus de vue entre deux CDT. PMID:24570799

  19. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

  20. Luminescence of one dimensional ZnO, GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanostructure through thermal evaporation of Zn and Ge powder mixture

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Vuong-Hung, E-mail: vuong.phamhung@hust.edu.vn; Kien, Vu Trung; Tam, Phuong Dinh; Huy, Pham Thanh

    2016-07-15

    Graphical abstract: - Highlights: • ZnO and GeO{sub 2}–ZnGeO{sub 4} nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture. • Morphology of specimens were observed to have a nanowire structure to rod-like morphology. • Strong NBE emission band with suppressed visible green emission band were observed on the dominant ZnO nanowires. • Strong emission of ∼530 nm were observed on the GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires. - Abstract: This paper reports the first attempt for fabrication of thermal evaporated Zn–Ge powder mixture to achieve near-band-edge (NBE) emission of ZnO and visible emission of GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires with controllable intensities. The nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture, particularly, by using different Zn:Ge ratio, temperature and evaporated times. The morphology of nanowires was depended on the Zn and Ge ratio that was observed to have a nanowire structure to rod-like morphology. The thermal evaporation of Zn:Ge powder mixture resulted in formation of dominant ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires as a function of evaporated parameters. These results suggest that the application of thermal evaporation of Zn and Ge mixture for potential application in synthesis of ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires for optoelectronic field.

  1. From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures

    International Nuclear Information System (INIS)

    Isa, Fabio; Salvalaglio, Marco; Dasilva, Yadira Arroyo Rojas; Jung, Arik; Isella, Giovanni; Erni, Rolf; Niedermann, Philippe; Gröning, Pierangelo; Montalenti, Francesco; Känel, Hans von

    2016-01-01

    We present a detailed experimental and theoretical analysis of the epitaxial stress relaxation process in micro-structured compositionally graded alloys. We focus on the pivotal SiGe/Si(001) system employing patterned Si substrates at the micrometre-size scale to address the distribution of threading and misfit dislocations within the heterostructures. SiGe alloys with linearly increasing Ge content were deposited by low energy plasma enhanced chemical vapour deposition resulting in isolated, tens of micrometre tall 3D crystals. We demonstrate that complete elastic relaxation is achieved by appropriate choice of the Ge compositional grading rate and Si pillar width. We investigate the nature and distribution of dislocations along the [001] growth direction in SiGe crystals by transmission electron microscopy, chemical defect etching and etch pit counting. We show that for 3 μm wide Si pillars and a Ge grading rate of 1.5% μm −1 , only misfit dislocations are present while their fraction is reduced for higher Ge grading rates and larger structures due to dislocation interactions. The experimental results are interpreted with the help of theoretical calculations based on linear elasticity theory describing the competition between purely elastic and plastic stress relaxation with increasing crystal width and Ge compositional grading rate.

  2. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    International Nuclear Information System (INIS)

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  3. Electronic structure of Ag8GeS6

    Directory of Open Access Journals (Sweden)

    D.I. Bletskan

    2017-04-01

    Full Text Available For the first time, the energy band structure, total and partial densities of states of Ag8GeS6 crystal were calculated using the ab initio density functional method in LDA and LDA+U approximations. Argyrodite is direct-gap semiconductor with the calculated band gap width Egd = 1.46 eV in the LDA+U approximation. The valence band of argyrodite contains four energy separated groups of occupied subzones. The unique feature of electron-energy structure of Ag8GeS6 crystal is the energy overlapping between the occupied d-states of Ag atoms and the delocalized valence p-states of S atoms in relatively close proximity to the valence band top.

  4. Charm and beauty production in D*μ events at H1/HERA

    International Nuclear Information System (INIS)

    Lucaci-Timoce, A.I.

    2007-07-01

    Charm and beauty photoproduction is investigated with the H1 detector at HERA using events with a reconstructed D * meson and a muon. Data taken during the years 1999-2000 and 2004-2006, corresponding to a total integrated luminosity of 320 pb -1 , are analysed. The D * mesons with transverse momentum p t (D * )>1.5 GeV and pseudorapidity vertical stroke η(D * ) vertical stroke *± →D (-)0 π s ± →(K -+ π ± )π s ± . In addition, muons with momentum p(μ)>2 GeV and vertical stroke η(μ) vertical stroke * meson and the muon. The charm and beauty cross sections were measured in photoproduction, i.e. for photon virtualities Q 2 2 , and for inelasticities 0.05 vis (ep→ec anti cX→eD *± μX)=314±33(stat)±101(syst)pb σ vis (ep→eb anti bX→eD *± μX)=90±20(stat)±26(syst)pb. The measurements are compared to leading order QCD calculations supplemented with parton showers as predicted by the PYTHIA Monte Carlo event generator. A ratio data/theory of 1.2±0.1(stat)±0.4(syst) and of 1.3±0.3(stat)±0.4(syst) is obtained for charm and beauty, respectively. Differential cross sections for the variables describing the D * μ system like transverse momentum p t (D * μ), pseudorapidity η(D * μ), invariant mass M(D * μ) and inelasticity y(D * μ) are measured and compared to the PYTHIA and the CASCADE Monte Carlo event generators. The theoretical models describe the shape of the differential distributions. Transverse momentum studies of the D * μ pair indicate a sensitivity to differing implementations of QCD dynamics in the simulation programs. (orig.)

  5. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  6. Pair phase transition and its evolution on even 64-68Ge isotopes

    International Nuclear Information System (INIS)

    Tong Hong; Shi Zhuyi

    2004-01-01

    By using a microscopic sdIBM-2+2q . p . approach which is the phenomenological core plus two-quasi-particle model and the experimental single-particle energies, the levels of the ground-band, β-band, γ-band, and partial two-quasi-particle states on 64-68 Ge isotopes are successfully reproduced. Based on the phenomenological model and microscopic approach, it has been deduced that no s-boson in the nucleus is breaking up and aligning; and that when one d-boson does, the minimum aligned energy can be calculated. This paper explicitly indicates that, with the increase of neutron number, an evolution process of PPT objects, i.e. from the two-quasi-proton states (on 64 Ge nucleus) to the two-quasi-neutron states (on 68 Ge nucleus) may take place in even Ge isotopes. (authors)

  7. Isomeric cross sections of neutron induced reactions on Ge and Ir isotopes

    International Nuclear Information System (INIS)

    Vlastou, R.; Papadopoulos, C.T.; Kokkoris, M.; Perdikakis, G.; Galanopoulos, S.; Patronis, N.; Serris, M.; Perdikakis, G.; Harissopulos, S.; Demetriou, P.

    2008-01-01

    The 72 Ge(n,α) 69m Zn, 74 Ge(n,α) 71m Zn, 76 Ge(n,2n) 75g+m Ge and 191 Ir(n,2n) 190 Ir g+m1 and 191 Ir(n,2n) 190 Ir m2 reaction cross sections were measured from 9.6 to 11.4 MeV relative to the 27 Al(n,α) 24 Na reference reaction via the activation method. The quasi-monoenergetic neutron beams were produced via the 2 H(d,n) 3 He reaction at the 5 MV VdG Tandem T11/25 accelerator of NCSR 'Demokritos'. Statistical model calculations using the codes STAPRE-F and EMPIRE (version 2.19) and taking into account pre-equilibrium emission were performed on the data measured in this work as well as on data reported in literature. (authors)

  8. Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

    Science.gov (United States)

    Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

    2018-06-01

    The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

  9. Ion Beam Synthesis of Ge Nanowires. rev. ed.

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, T.

    2001-01-01

    The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1 x 10{sup 17} Ge{sup +}cm{sup -2} at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N{sub 2} atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter. (orig.)

  10. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

    International Nuclear Information System (INIS)

    Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

    2008-01-01

    We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

  11. Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Konstantin

    2009-10-21

    The present work describes an experimental investigation of the influence of the step properties on the submonolayer growth at the Si(111) surface. In particular the influence of step properties on the morphology, shape and structural stability of 2D Si/Ge nanostructures was explored. Visualization, morphology and composition measurements of the 2D SiGe nanostructures were carried out by scanning tunneling microscopy (STM). The formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces is demonstrated. The crystalline nanowires with minimal kink densities were grown using Bi surfactant mediated epitaxy. The nanowires extend over lengths larger than 1 {mu}m have a width of 4 nm. To achieve the desired growth conditions for the formation of such nanowire arrays, a modified variant of surfactant mediated epitaxy was explored. It was shown that controlling the surfactant coverage at the surface and/or at step edges modifies the growth properties of surface steps in a decisive way. The surfactant coverage at step edges can be associated with Bi passivation of the step edges. The analysis of island size distributions showed that the step edge passivation can be tuned independently by substrate temperature and by Bi rate deposition. The measurements of the island size distributions for Si and Ge in surfactant mediated growth reveal different scaling functions for different Bi deposition rates on Bi terminated Si(111) surface. The scaling function changes also with temperature. The main mechanism, which results in the difference of the scaling functions can be revealed with data of Kinetic Monte-Carlo simulations. According to the data of the Si island size distributions at different growth temperatures and different Bi deposition rates the change of SiGe island shape and preferred step directions were attributed to the change of the step edge passivation. It was shown that the change of the step edge passivation is followed by a change of the

  12. 75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

    Science.gov (United States)

    2010-08-05

    ...] GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... of Investment Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The...

  13. Determination of the proton spin structure functions for 0.05 GeV2 using CLAS

    Science.gov (United States)

    Fersch, R. G.; Guler, N.; Bosted, P.; Deur, A.; Griffioen, K.; Keith, C.; Kuhn, S. E.; Minehart, R.; Prok, Y.; Adhikari, K. P.; Adhikari, S.; Akbar, Z.; Amaryan, M. J.; Anefalos Pereira, S.; Asryan, G.; Avakian, H.; Ball, J.; Balossino, I.; Baltzell, N. A.; Battaglieri, M.; Bedlinskiy, I.; Biselli, A. S.; Briscoe, W. J.; Brooks, W. K.; Bültmann, S.; Burkert, V. D.; Thanh Cao, Frank; Carman, D. S.; Careccia, S.; Celentano, A.; Chandavar, S.; Charles, G.; Chetry, T.; Ciullo, G.; Clark, L.; Colaneri, L.; Cole, P. L.; Compton, N.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Djalali, C.; Dodge, G. E.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fanchini, E.; Fedotov, G.; Filippi, A.; Fleming, J. A.; Forest, T. A.; Garçon, M.; Gavalian, G.; Ghandilyan, Y.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Gleason, C.; Golovatch, E.; Gothe, R. W.; Guidal, M.; Guo, L.; Hafidi, K.; Hakobyan, H.; Hanretty, C.; Harrison, N.; Hattawy, M.; Heddle, D.; Hicks, K.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Isupov, E. L.; Jenkins, D.; Joo, K.; Keller, D.; Khachatryan, G.; Khachatryan, M.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F. J.; Kubarovsky, V.; Lagerquist, V. G.; Lanza, L.; Lenisa, P.; Livingston, K.; Lu, H. Y.; McKinnon, B.; Meyer, C. A.; Mirazita, M.; Mokeev, V.; Montgomery, R. A.; Movsisyan, A.; Munoz Camacho, C.; Murdoch, G.; Nadel-Turonski, P.; Niccolai, S.; Niculescu, G.; Niculescu, I.; Osipenko, M.; Ostrovidov, A. I.; Paolone, M.; Paremuzyan, R.; Park, K.; Pasyuk, E.; Phelps, W.; Pierce, J.; Pisano, S.; Pogorelko, O.; Price, J. W.; Protopopescu, D.; Raue, B. A.; Ripani, M.; Riser, D.; Rizzo, A.; Rosner, G.; Rossi, P.; Roy, P.; Sabatié, F.; Salgado, C.; Schumacher, R. A.; Sharabian, Y. G.; Simonyan, A.; Skorodumina, Iu.; Smith, G. D.; Sokhan, D.; Sparveris, N.; Stankovic, I.; Stepanyan, S.; Strakovsky, I. I.; Strauch, S.; Taiuti, M.; Tian, Ye; Torayev, B.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Watts, D. P.; Wei, X.; Weinstein, L. B.; Zachariou, N.; Zhang, J.; CLAS Collaboration

    2017-12-01

    We present the results of our final analysis of the full data set of g1p(Q2) , the spin structure function of the proton, collected using CLAS at Jefferson Laboratory in 2000-2001. Polarized electrons with energies of 1.6, 2.5, 4.2, and 5.7 GeV were scattered from proton targets (NH153 dynamically polarized along the beam direction) and detected with CLAS. From the measured double spin asymmetries, we extracted virtual photon asymmetries A1p and A2p and spin structure functions g1p and g2p over a wide kinematic range (0.05 GeV2GeV2 and 1.08 GeV GeV) and calculated moments of g1p. We compare our final results with various theoretical models and expectations, as well as with parametrizations of the world data. Our data, with their precision and dense kinematic coverage, are able to constrain fits of polarized parton distributions, test pQCD predictions for quark polarizations at large x , offer a better understanding of quark-hadron duality, and provide more precise values of higher twist matrix elements in the framework of the operator product expansion.

  14. PHOBOS at RHIC 2000

    International Nuclear Information System (INIS)

    Garcia, E.; Baum, R.; Bindel, R.; Mignerey, A.; Shea, J.; Back, B.B.; Betts, R.R.; George, N.; Wuosmaa, A.H.; Baker, M.D.; Barton, D.S.; Carroll, A.; Ceglia, M.; Gushue, S.; Heintzelman, G.A.; Kraner, H.; Olszewski, A.; Pak, R.; Remsberg, L.P.; Scaduto, J.; Sinacore, J.; Steinberg, P.; Sukhanov, A.; Bogucki, W.; Budzanowski, A.; Coghen, T.; Dabrowski, B.; Despet, M.; Galuszka, K.; Godlewski, J.; Halik, J.; Holynski, R.; Kita, W.; Kotula, J.; Lemler, M.; Ligocki, J.; Michalowski, J.; Sawicki, P.; Straczek, A.; Stodulski, M.; Strek, M.; Stopa, Z.; Trzupek, A.; Wosiek, B.; Wozniak, K.; Zychowski, P.; Bialas, A.; Czyz, W.; Zalewski, K.; Basilev, S.; Bates, B.D.; Busza, W.; Decowski, M.P.; Fita, P.; Fitch, J.; Friedl, M.; Gomes, C.; Griesmayer, E.; Gulbrandsen, K.; Haridas, P.; Henderson, C.; Kane, J.; Katzy, J.; Kulinich, P.; Law, C.; Mulmenstadt, J.; Neal, M.; Patel, M.; Pernegger, H.; Plesko, M.; Reed, C.; Roland, C.; Roland, G.; Ross, D.; Rosenberg, L.; Ryan, J.; Sarin, P.; Steadman, S.G.; Stephans, G.S.F.; Surowiecka, K.; Vale, C.M.; Van Nieuwenhuizen, G.J.; Verdier, R.; Wadsworth, B.; Wyslouch, B.; Chang, Y.H.; Chen, A.E.; Lin, W.T.; Tang, J.L.; Conner, C.; Ganz, R.; Halliwell, C.; Hollis, R.; Holzman, B.; Kucewicz, W.; McLeod, D.; Nouicer, R.; Reuter, M.; Hayes, A.; Johnson, E.; Manly, S.; Park, I.C.; Skulski, W.; Teng, R.; Wolfs, F.L.H.; Sanzgiri, A.

    2001-01-01

    The relativistic heavy ion collider (RHIC) at Brookhaven national laboratory delivered in June 2000 the first collisions between Au nuclei at the highest center-of-mass energies achieved in a controlled environment to date. PHOBOS is one of the four experiments installed during this phase of RHIC running. This paper will describe the PHOBOS experiment, and discuss the results of the first physics measurement, thc pseudo rapidity densities of primary charged particles near mid rapidity in central Au + Au collisions at two different energies, √ S NN = 56 and 130 GeV. The observed densities are higher than those previously observed in any collisions, and the rate of increase between the two energies is larger than that for nucleon-nucleon collisions at comparable beam energies. This talk will describe the PHOBOS experiment, discuss the first physics measurement, and conclude with the present status of the experiment, the physics analysis and the perspectives fi the future. (Author)

  15. High-field magnetization of UCuGe single crystal

    Czech Academy of Sciences Publication Activity Database

    Andreev, Alexander V.; Mushnikov, N. V.; Gozo, T.; Honda, F.; Sechovský, V.; Prokeš, K.

    346-347, - (2004), s. 132-136 ISSN 0921-4526 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : uranium intermetallics * UCuGe * high fields * magnetic anisotropy * field-induced phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.679, year: 2004

  16. Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

    Science.gov (United States)

    Lucovsky, Gerald; Zeller, Daniel

    2011-09-01

    Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

  17. Antihelium-3 production in lead-lead collisions at 158 A GeV/c

    International Nuclear Information System (INIS)

    Arsenescu, R; Baglin, C; Beck, H P; Borer, K; Bussiere, A; Elsener, K; Gorodetzky, Ph; Guillaud, J P; Kabana, S; Klingenberg, R; Lehmann, G; Linden, T; Lohmann, K D; Mommsen, R; Moser, U; Pretzl, K; Schacher, J; Spiwoks, R; Tuominiemi, J; Weber, M

    2003-01-01

    The NA-52 experiment measured particle and antiparticle yields at 0 deg production angle over a wide range in rapidity in lead-lead (Pb-Pb) collisions at 158 A GeV/c with a minimum bias trigger. Besides O(10 6 ) antiprotons and O(10 3 ) antideuterons a total of five antihelium-3 were found. The resulting invariant differential production cross sections at p t ≅0 GeV/c turn out to be E (d 3 σ)/(dp 3 ) = (2.5 ± 1.8) x 10 -7 bc 3 GeV -2 at a rapidity of y = 3.4 in the laboratory system and (5.9 ± 3.4) x 10 -8 bc 3 GeV -2 at y = 4.0. The results are discussed in the framework of a simple coalescence model

  18. (Tl, Sb) and (Tl, Bi) binary surface reconstructions on Ge(111) substrate

    Science.gov (United States)

    Gruznev, D. V.; Bondarenko, L. V.; Tupchaya, A. Y.; Yakovlev, A. A.; Mihalyuk, A. N.; Zotov, A. V.; Saranin, A. A.

    2018-03-01

    2D compounds made of Group-III and Group-V elements on the surface of silicon and germanium attract considerable attention due to prospects of creating III-V binary monolayers, which are predicted to hold advanced physical properties. In the present work, we have investigated two such systems, (Tl, Sb)/Ge(111) and (Tl, Bi)/Ge(111) using scanning tunneling microscopy, low energy electron diffraction observations and density-functional-theory calculations. In addition to the previously reported surface structures of 2D (Tl, Sb) and (Tl, Bi) compounds on Si(111), we found new ones, namely, √{ 7} × √{ 7} and 3 × 3. Formation processes and plausible models of their atomic arrangements are discussed.

  19. High-speed Si/GeSi hetero-structure Electro Absorption Modulator.

    Science.gov (United States)

    Mastronardi, L; Banakar, M; Khokhar, A Z; Hattasan, N; Rutirawut, T; Bucio, T Domínguez; Grabska, K M; Littlejohns, C; Bazin, A; Mashanovich, G; Gardes, F Y

    2018-03-19

    The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.

  20. N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

    Science.gov (United States)

    Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

    2015-12-09

    Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

  1. One-step Ge/Si epitaxial growth.

    Science.gov (United States)

    Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

    2011-07-01

    Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

  2. Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

    Science.gov (United States)

    Bashir, A.; Gallacher, K.; Millar, R. W.; Paul, D. J.; Ballabio, A.; Frigerio, J.; Isella, G.; Kriegner, D.; Ortolani, M.; Barthel, J.; MacLaren, I.

    2018-01-01

    A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%-90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.

  3. Phase 1 report: the 4D seismic market from 2000 to 2003

    International Nuclear Information System (INIS)

    Sagary, C.

    2004-01-01

    This report synthesizes the phase 1 results of the joint industrial project, called ''4D Seismic: Technologies, Economics and Issues''. This project was conducted by IFP between November 2003 and April 2004, in collaboration with Compagnie Generale de Geophysique (CGG) and sponsored by Gaz de France and 4. Wave Imaging. Phase 1 offers an objective view of the 4D seismic market over the period 2000-2003. The market has been assessed from IFP extensive databases, gathering 115 4D projects conducted worldwide and from interviews of seven oil companies, both representing 90% of the activity in time-lapse seismic. This study provides sales estimation and sales/projects breakdown by: in-house/subcontracted activity, geography, onshore/offshore, reservoir rocks and recovery methods, technology/methodology, oil companies and service companies. The market of 4D seismic has been split into 4 segments: acquisition, processing, reservoir studies - feasibility, interpretation and seismic history matching -, borehole seismic (acquisition and processing). In addition, the market of passive seismic monitoring, another technique of seismic reservoir monitoring has also been estimated. The main sources, used to build the IFP databases, were: Worldwide Global E and P Service Reports from IHS Energy, World Geophysical News, an extensive bibliographic study through more than 200 articles, abstracts and summaries, a collaboration with CGG. For all market estimations, numbers computed from IFP databases and from interviews of oil companies were extrapolated from 90% to 100%, to quantify the total 4D activity. The estimations obtained were not rounded in order to preserve trends with a consistent computation from one year to another and from one market segment to another, despite uncertainties of about 10%. Quality controls were performed to validate the final estimations: volumes of 4D seismic data, computed from IFP databases, were checked by comparing processed data with acquired data

  4. Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge{sub 1−x}Sn{sub x} layer on Ge(0 0 1) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; Li, Lingzi; Zhou, Qian [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Pan, Jisheng; Zhang, Zheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore); Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-12-01

    Highlights: • Ge{sub 0.915}Sn{sub 0.085} was grown on Ge (0 0 1) by molecular beam epitaxy (MBE). • The impact of annealing on surface morphology and Sn composition was studied. • Sn is found to preferentially segregate towards the surface at 200 °C. • A Sn-rich layer would form on the Ge{sub 1−x}Sn{sub x} surface after annealing at 300 °C. • Sn desorption and formation of Sn-rich islands were found when T > 300 °C. - Abstract: Annealing of strained Ge{sub 1−x}Sn{sub x} epitaxial layers grown on Ge(0 0 1) substrate results in two distinctive regimes marked by changes in composition and morphology. Annealing at low temperatures (200–300 °C or Regime-I) leads to surface enrichment of Sn due to Sn segregation, as indicated by X-ray photoelectron spectroscopy (XPS) results, while the bulk Sn composition (from X-ray diffraction (XRD)) and the surface morphology (from atomic force microscopy (AFM)) do not show discernible changes as compared to the as-grown sample. Annealing at temperatures ranging from 300 °C to 500 °C (Regime-II) leads to a decrease in the surface Sn composition. While the Ge{sub 1−x}Sn{sub x} layer remains fully strained, a reduction in the bulk Sn composition is observed when the annealing temperature reaches 500 °C. At this stage, surface roughening also occurs with formation of 3D islands. The island size increases as the annealing temperature is raised to 600 °C. The decrease in the Sn composition at the surface and in the bulk in Regime-II is attributed to additional thermally activated kinetic processes associated with Sn desorption and formation of Sn-rich 3D islands on the surface.

  5. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    International Nuclear Information System (INIS)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

    2014-01-01

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  6. Evidence for a narrow peak in K0sub(s)π+-π+π- at 2.6 GeV in 12 GeV/c anti pp interactions

    International Nuclear Information System (INIS)

    Apostolakis, A.; Casali, R.; Caso, C.; Goldschmidt-Clermont, Y.; Pape, L.; Porte, J.P.; Stergiou, A.; Tallini, B.; Vassiliadis, G.; Wenninger, H.; Grard, G.; Henri, V.P.; Herquet, P.; Kesteman, J.; Banerjee, S.; Barnham, K.W.J.; Beuselinck, R.; Butterworth, I.; Campbell, J.R.; Chaff, J.; Mermikides, M.E.; Miller, D.B.; Bertrand, D.; Johnson, D.; Lemonne, J.; Renton, P.; Wickens, J.; Bogaert, F. van den; Daugeras, B.; Jacholkowska, A.

    1977-01-01

    The evidence is reported for a narrow charged peak (5.5 s.d.), which the authors suggest calling the I, in the 6-prong-V 0 topology of anti pp interactions at 12 GeV/c. The mass, width and the product of cross section sigmasub(I) times the branching ratio BR into the final state (K 0 sub(s)π +- π + π - ) are found to be: Msub(I)=2.60+-0.01 GeV/c 2 , GAMMAsub(I) 2 , sigmasub(I).BR approximately 20 μbarn. (Auth.)

  7. The 12 GeV Upgrade at Jefferson Lab

    International Nuclear Information System (INIS)

    Rolf Ent

    2002-01-01

    , direct evidence for the role of gluons in the QCD confinement region is still missing. Spectroscopy of light ''exotic'' mesons, with glue as essential part of their valence structure, would provide such essential evidence. In addition, with 12 GeV one crosses the threshold for charm production. The nearly final draft of the recent NSAC long-range plan states the 12 GeV Upgrade as one of three construction recommendations: ''We strongly recommend the upgrade of CEBAF at Jefferson Laboratory to 12 GeV as soon as possible. The 12 GeV upgrade of the unique CEBAF facility is critical for our continued leadership in the experimental study of hadronic matter.'' Presently, the status of the 12 GeV Upgrade is that the laboratory is waiting for ''CD-0'', a ''Statement of Mission Need'', approval by DOE. Conceptual Design Reports for both accelerator upgrades and the various experimental upgrades (Halls A, B, C, and D) are anticipated by September 15, 2002

  8. Characterization of Ge-nanocrystal films with photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Bostedt, C.; Buuren, T. van; Willey, T.M.; Nelson, A.J.; Franco, N.; Moeller, T.; Terminello, L.J.

    2003-01-01

    The Ge 3d core-levels of germanium nanocrystal films have been investigated by means of photoelectron spectroscopy. The experiments indicate bulk-like coordinated atoms in the nanocrystals and suggest structured disorder on the nanoparticle surface. The results underline the importance of the surface on the overall electronic structure of this class of nanostructured materials

  9. Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

    International Nuclear Information System (INIS)

    Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

    2006-01-01

    Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

  10. Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

    Science.gov (United States)

    Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

    2017-10-01

    The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

  11. Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

    International Nuclear Information System (INIS)

    Chen, I. H.; Lai, W. T.; Li, P. W.

    2014-01-01

    Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (G D ) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V 1/2 , of G D valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV 1/2  ≅ (1 − 0.11n) × 5.15k B T, providing the primary thermometric quantity. The depth of G D valley is also proportional to charging energy (E C ) and 1/T via ΔG D  ≅ E C /9.18k B T, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155 K in a spatial resolution less than 10 nm and temperature accuracy of sub-kelvin.

  12. Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

    Energy Technology Data Exchange (ETDEWEB)

    Chen, I. H.; Lai, W. T.; Li, P. W., E-mail: pwli@ee.ncu.edu.tw [Department of Electrical Engineering and Center for Nano Science and Technology, National Central University, ChungLi 32001, Taiwan (China)

    2014-06-16

    Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (G{sub D}) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V{sub 1/2}, of G{sub D} valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV{sub 1/2} ≅ (1 − 0.11n) × 5.15k{sub B}T, providing the primary thermometric quantity. The depth of G{sub D} valley is also proportional to charging energy (E{sub C}) and 1/T via ΔG{sub D} ≅ E{sub C}/9.18k{sub B}T, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155 K in a spatial resolution less than 10 nm and temperature accuracy of sub-kelvin.

  13. Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

    2017-11-29

    The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

  14. Activity report of the DPHD 2000; Rapport d'activite du DPHD 2000

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-07-01

    This report concerns the activities of the department of protection of health for man and dosimetry at I.P.S.N. for the year 2000. It studied and presents dosimetry, the first chapter is relative to external, internal and in case of accident, the second chapter discusses radiobiology and radio-pathology through biological dosimetry, diagnosis and prognosis of radioinduced damages and therapy of radioinduced damage, the third chapter is devoted to evaluation and management of risks with radiation protection, epidemiology and management of risks, the fourth chapter concerns the dosimetric and radio-toxicologic surveillance with the surveillance of internal exposure and the radio-toxicologic surveillance. (N.C.)

  15. Boron diffusion in strained and strain-relaxed SiGe

    International Nuclear Information System (INIS)

    Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

    2005-01-01

    SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H. Shido, Y. Sakuma, S. Nakamura, Symposium on VLSI Technology Technical Digest, 2002, pp. 94-95; T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, International Electron Devices Meeting Technical Digest, December 2003, pp. 978-980; P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon, E. Lee, S. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, International Electron Devices Meeting Technical Digest, December 2004, pp. 657-660] presenting the advantages brought by it. A better understanding regarding the boron diffusion behavior within and in the vicinity of SiGe is necessary to optimize the extension and the source/drain in pMOSFET. In order to achieve the goal, both effects from mechanical strain and Ge doping on boron diffusion have been investigated. However, only a few publications discuss the impacts of both. Furthermore, most researches investigate these two effects under the conditions of low boron concentration [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890] and high thermal budget anneal [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl

  16. Nucleon-gold collisions at 200 A GeV using tagged d + Au interactions in the PHOBOS detector

    Science.gov (United States)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.; Phobos Collaboration

    2015-09-01

    Forward calorimetry in the PHOBOS detector has been used to study charged hadron production in d +Au , p +Au , and n +Au collisions at √{sN N}=200 GeV . The forward proton calorimeter detectors are described and a procedure for determining collision centrality with these detectors is detailed. The deposition of energy by deuteron spectator nucleons in the forward calorimeters is used to identify p +Au and n +Au collisions in the data. A weighted combination of the yield of p +Au and n +Au is constructed to build a reference for Au +Au collisions that better matches the isospin composition of the gold nucleus. The pT and centrality dependence of the yield of this improved reference system is found to match that of d +Au . The shape of the charged-particle transverse momentum distribution is observed to extrapolate smoothly from p +p ¯ to central d +Au as a function of the charged-particle pseudorapidity density. The asymmetry of positively and negatively charged hadron production in p +Au is compared to that of n +Au . No significant asymmetry is observed at midrapidity. These studies augment recent results from experiments at the CERN Large Hadron Collider and BNL Relativistic Heavy Ion Collider facilities to give a more complete description of particle production in p +A and d +A collisions, essential for the understanding the medium produced in high-energy nucleus-nucleus collisions.

  17. Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O3 layer

    International Nuclear Information System (INIS)

    Paleari, S.; Molle, A.; Accetta, F.; Lamperti, A.; Cianci, E.; Fanciulli, M.

    2014-01-01

    The electrical activity of Ge dangling bonds is investigated at the interface between GeO 2 -passivated Ge(1 1 1) substrate and Al 2 O 3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al 2 O 3 /GeO 2 /Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices ( 10 cm −2 ). In particular, it is shown that capping the GeO 2 -passivated Ge(1 1 1) with Al 2 O 3 has no impact on the microstructure of the Ge dangling bond.

  18. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

    Science.gov (United States)

    Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2016-08-22

    We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

  19. Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation

    Energy Technology Data Exchange (ETDEWEB)

    Satoh, Yuhki, E-mail: yu-ki@ecei.tohoku.ac.jp; Itoh, Yuhki; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-03-01

    To form Ge dots on a Si substrate, the effect of thermal reaction temperature of sub-monolayer C with Si (100) was investigated and the deposited Ge thickness was optimized. The samples were prepared by solid-source molecular beam epitaxy with an electron-beam gun for C sublimation and a Knudsen cell for Ge evaporation. C of 0.25 ML was deposited on Si (100) at a substrate temperature of 200 °C, followed by a high-temperature treatment at the reaction temperature (T{sub R}) of 650–1000 °C to create Si–C bonds. Ge equivalent to 2 to 5 nm thick was subsequently deposited at 550 °C. Small and dense dots were obtained for T{sub R} = 750 °C but the dot density decreased and the dot diameter varied widely in the case of lower and higher T{sub R}. A dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge deposition equivalent to 3 to 5 nm thick and a standard deviation of dot diameter was the lowest of 10 nm for 5 nm thick Ge. These results mean that C-mediated Ge dot formation was strongly influenced not only by the c(4 × 4) reconstruction condition through the Si–C reaction but also the relationship between the Ge deposition thickness and the exposed Si (100)-(2 × 1) surface area. - Highlights: • The effect of Si–C reaction temperature on Ge dot formation was investigated. • Small and dense dots were obtained for T{sub R} = 750 °C. • The dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge = 3 to 5 nm. • The standard deviation of dot diameter was the lowest of 10 nm at Ge = 5 nm.

  20. Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

    Science.gov (United States)

    Pham, Thach; Du, Wei; Tran, Huong; Margetis, Joe; Tolle, John; Sun, Greg; Soref, Richard A; Naseem, Hameed A; Li, Baohua; Yu, Shui-Qing

    2016-03-07

    Normal-incidence Ge 1-x Sn x photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge 1-x Sn x /Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 10 9 cmHz 1/2 W -1 at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.

  1. Polarisation parameter measurement in the proton-proton elastic scattering from 0.5 to 1.2 GeV

    International Nuclear Information System (INIS)

    Ducros, Yves

    1970-01-01

    The angular distribution of the polarisation parameter was measured in the proton-proton elastic - scattering at seven energies between 0.5 and 1.2 GeV. A polarized proton target was used. The results show a maximum of the polarisation parameter of 0.6, at 0.73 GeV. This maximum is due to the important increase of the total cross section between 0.6 and 0.73 GeV. At 1.2 GeV the angular distribution of the polarisation shows a minimum for a momentum transfer value of -1 (GeV/c) 2 . A phase shift analysis was done at 0.66 GeV, using all available experimental data at this energy. There is no evidence of a di-baryonic resonance in the 1 D 2 phase. (author) [fr

  2. Suppression of back-to-back hadron pairs at forward rapidity in d+Au collisions at √s(NN)=200 GeV.

    Science.gov (United States)

    Adare, A; Afanasiev, S; Aidala, C; Ajitanand, N N; Akiba, Y; Al-Bataineh, H; Alexander, J; Angerami, A; Aoki, K; Apadula, N; Aramaki, Y; Atomssa, E T; Averbeck, R; Awes, T C; Azmoun, B; Babintsev, V; Bai, M; Baksay, G; Baksay, L; Barish, K N; Bassalleck, B; Basye, A T; Bathe, S; Baublis, V; Baumann, C; Bazilevsky, A; Belikov, S; Belmont, R; Bennett, R; Berdnikov, A; Berdnikov, Y; Bhom, J H; Blau, D S; Bok, J S; Boyle, K; Brooks, M L; Buesching, H; Bumazhnov, V; Bunce, G; Butsyk, S; Campbell, S; Caringi, A; Chen, C-H; Chi, C Y; Chiu, M; Choi, I J; Choi, J B; Choudhury, R K; Christiansen, P; Chujo, T; Chung, P; Chvala, O; Cianciolo, V; Citron, Z; Cole, B A; Conesa del Valle, Z; Connors, M; Csanád, M; Csörgo, T; Dahms, T; Dairaku, S; Danchev, I; Das, K; Datta, A; David, G; Dayananda, M K; Denisov, A; Deshpande, A; Desmond, E J; Dharmawardane, K V; Dietzsch, O; Dion, A; Donadelli, M; Drapier, O; Drees, A; Drees, K A; Durham, J M; Durum, A; Dutta, D; D'Orazio, L; Edwards, S; Efremenko, Y V; Ellinghaus, F; Engelmore, T; Enokizono, A; En'yo, H; Esumi, S; Fadem, B; Fields, D E; Finger, M; Finger, M; Fleuret, F; Fokin, S L; Fraenkel, Z; Frantz, J E; Franz, A; Frawley, A D; Fujiwara, K; Fukao, Y; Fusayasu, T; Garishvili, I; Glenn, A; Gong, H; Gonin, M; Goto, Y; Granier de Cassagnac, R; Grau, N; Greene, S V; Grim, G; Grosse Perdekamp, M; Gunji, T; Gustafsson, H-Å; Haggerty, J S; Hahn, K I; Hamagaki, H; Hamblen, J; Han, R; Hanks, J; Haslum, E; Hayano, R; He, X; Heffner, M; Hemmick, T K; Hester, T; Hill, J C; Hohlmann, M; Holzmann, W; Homma, K; Hong, B; Horaguchi, T; Hornback, D; Huang, S; Ichihara, T; Ichimiya, R; Ikeda, Y; Imai, K; Inaba, M; Isenhower, D; Ishihara, M; Issah, M; Isupov, A; Ivanischev, D; Iwanaga, Y; Jacak, B V; Jia, J; Jiang, X; Jin, J; Johnson, B M; Jones, T; Joo, K S; Jouan, D; Jumper, D S; Kajihara, F; Kamin, J; Kang, J H; Kapustinsky, J; Karatsu, K; Kasai, M; Kawall, D; Kawashima, M; Kazantsev, A V; Kempel, T; Khanzadeev, A; Kijima, K M; Kikuchi, J; Kim, A; Kim, B I; Kim, D J; Kim, E J; Kim, Y-J; Kinney, E; Kiss, Á; Kistenev, E; Kochenda, L; Komkov, B; Konno, M; Koster, J; Král, A; Kravitz, A; Kunde, G J; Kurita, K; Kurosawa, M; Kwon, Y; Kyle, G S; Lacey, R; Lai, Y S; Lajoie, J G; Lebedev, A; Lee, D M; Lee, J; Lee, K B; Lee, K S; Leitch, M J; Leite, M A L; Li, X; Lichtenwalner, P; Liebing, P; Linden Levy, L A; Liška, T; Litvinenko, A; Liu, H; Liu, M X; Love, B; Lynch, D; Maguire, C F; Makdisi, Y I; Malakhov, A; Malik, M D; Manko, V I; Mannel, E; Mao, Y; Masui, H; Matathias, F; McCumber, M; McGaughey, P L; Means, N; Meredith, B; Miake, Y; Mibe, T; Mignerey, A C; Miki, K; Milov, A; Mitchell, J T; Mohanty, A K; Moon, H J; Morino, Y; Morreale, A; Morrison, D P; Moukhanova, T V; Murakami, T; Murata, J; Nagamiya, S; Nagle, J L; Naglis, M; Nagy, M I; Nakagawa, I; Nakamiya, Y; Nakamura, K R; Nakamura, T; Nakano, K; Nam, S; Newby, J; Nguyen, M; Nihashi, M; Nouicer, R; Nyanin, A S; Oakley, C; O'Brien, E; Oda, S X; Ogilvie, C A; Oka, M; Okada, K; Onuki, Y; Oskarsson, A; Ouchida, M; Ozawa, K; Pak, R; Pantuev, V; Papavassiliou, V; Park, I H; Park, S K; Park, W J; Pate, S F; Pei, H; Peng, J-C; Pereira, H; Peresedov, V; Peressounko, D Yu; Petti, R; Pinkenburg, C; Pisani, R P; Proissl, M; Purschke, M L; Qu, H; Rak, J; Ravinovich, I; Read, K F; Reygers, K; Riabov, V; Riabov, Y; Richardson, E; Roach, D; Roche, G; Rolnick, S D; Rosati, M; Rosen, C A; Rosendahl, S S E; Rukoyatkin, P; Ružička, P; Sahlmueller, B; Saito, N; Sakaguchi, T; Sakashita, K; Samsonov, V; Sano, S; Sato, T; Sawada, S; Sedgwick, K; Seele, J; Seidl, R; Seto, R; Sharma, D; Shein, I; Shibata, T-A; Shigaki, K; Shimomura, M; Shoji, K; Shukla, P; Sickles, A; Silva, C L; Silvermyr, D; Silvestre, C; Sim, K S; Singh, B K; Singh, C P; Singh, V; Slunečka, M; Soltz, R A; Sondheim, W E; Sorensen, S P; Sourikova, I V; Stankus, P W; Stenlund, E; Stoll, S P; Sugitate, T; Sukhanov, A; Sziklai, J; Takagui, E M; Taketani, A; Tanabe, R; Tanaka, Y; Taneja, S; Tanida, K; Tannenbaum, M J; Tarafdar, S; Taranenko, A; Themann, H; Thomas, D; Thomas, T L; Togawa, M; Toia, A; Tomášek, L; Torii, H; Towell, R S; Tserruya, I; Tsuchimoto, Y; Vale, C; Valle, H; van Hecke, H W; Vazquez-Zambrano, E; Veicht, A; Velkovska, J; Vértesi, R; Virius, M; Vrba, V; Vznuzdaev, E; Wang, X R; Watanabe, D; Watanabe, K; Watanabe, Y; Wei, F; Wei, R; Wessels, J; White, S N; Winter, D; Woody, C L; Wright, R M; Wysocki, M; Yamaguchi, Y L; Yamaura, K; Yang, R; Yanovich, A; Ying, J; Yokkaichi, S; You, Z; Young, G R; Younus, I; Yushmanov, I E; Zajc, W A; Zhou, S; Zolin, L

    2011-10-21

    Back-to-back hadron pair yields in d+Au and p+p collisions at √s(NN)=200 GeV were measured with the PHENIX detector at the Relativistic Heavy Ion Collider. Rapidity separated hadron pairs were detected with the trigger hadron at pseudorapidity |η|back-to-back hadron pairs in d+Au collisions with small impact parameters is observed to be suppressed by a factor of 10 relative to p+p collisions. The kinematics of these pairs is expected to probe partons in the Au nucleus with a low fraction x of the nucleon momenta, where the gluon densities rise sharply. The observed suppression as a function of nuclear thickness, p(T), and η points to cold nuclear matter effects arising at high parton densities. © 2011 American Physical Society

  3. Annual report of department of research reactor, 2000. April 1, 2000 - March 31, 2001

    International Nuclear Information System (INIS)

    2002-02-01

    The Department of Research Reactor is responsible for the operation, Maintenance, utilization of the JRR-3 and the JRR-4 and for the related R and D. Besides RI production including its R and D are carried out. This report describes the activities of the department in fiscal year of 2000 and it also includes some of the technical topics on the works mentioned above. As for the research reactors, we carried out the operation, maintenance, the utilization of irradiation and neutron beam experiments, technical management including fuels and water chemistry, radiation monitoring as related R and D works. RI Production and its R and D works were conducted as well. The international cooperations between the developing countries and the department were also made concerning the operation, utilization and safety analysis for research reactors. Although the term 'JRR-3M' was used to denote the JRR-3M modified 1990 until the 2000 annual report of the Department of Research Reactor, the term 'JRR-3' will be used from this annual report because the JRR-3 has been operated for about 10 years since the modification and is now under further modification and upgrading study. (author)

  4. The composition dependence of magnetic, electronic and optical properties of Mn-doped SixGe1-x nanowires

    Science.gov (United States)

    Wei, Jianglin; Lan, Mu; Zhang, Xi; Xiang, Gang

    2017-07-01

    Mn-doped SixGe1-x nanowires (NWs) with different Ge concentrations have been studied by first-principles calculations. It is found that the spin dependent energy bands of the NWs show rich variations both in bandgap width and type (from indirect to direct) as the Ge concentration changes. The Mn-doped SixGe1-x NWs exhibit half-metallic characteristics for all Ge concentrations, and the ground states of the NWs are found to be ferromagnetic (FM). The net magnetization mapping and spin density of states calculations reveal that Mn 3d electrons have a strong hybridization effect with nearest Ge 4p electrons, which results in the Ge’s nontrivial contribution to the magnetic moment of the NWs. Further magnon dispersion studies show that the magnetic order stability of the NWs is influenced by Ge concentrations. Finally, the dependence of the optical properties of the magnetic NWs on the Ge concentration is demonstrated. Our results suggest that Mn-doped SixGe1-x NWs may be useful in spintronic and optoelectronic devices.

  5. Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

    Science.gov (United States)

    Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

    2018-01-01

    Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

  6. The gastroesophageal (GE) scintiscan in detection of GE reflux and pulmonary aspiration in children

    International Nuclear Information System (INIS)

    Arasu, T.S.; Franken, E.A.; Wyllie, R.; Eigen, H.; Grosfeld, J.L.; Siddiqui, A.R.; Fitzgerald, J.F.

    1980-01-01

    Gastroesophageal scintiscans and barium examinations were performed on 30 children with documented GE reflux and 13 control patients. After instillation of 2 mCi of Tc99m sulfur colloid into the stomach, serial images of the abdomen and thorax were obtained. The GE scintiscan was positive in 17 of 30 with GE reflux; the barium study was positive in 15 of 30. A positive scintiscan and/or barium study was found in 21 of 30 patients with reflux, and none of the controls. Pulmonay aspiration of gastric contents was not detected by either method. We conclude that the GE scintiscan is complementary to barium studies in the diagnosis of GE reflux, and neither study approaches the accuracy of more sophisticated tests [fr

  7. Enhancing crystalline silicon solar cell efficiency with SixGe1-x layers

    Science.gov (United States)

    Ali, Adnan; Cheow, S. L.; Azhari, A. W.; Sopian, K.; Zaidi, Saleem H.

    Crystalline silicon (c-Si) solar cell represents a cost effective, environment-friendly, and proven renewable energy resource. Industrially manufacturing of c-Si solar has now matured in terms of efficiency and cost. Continuing cost-effective efficiency enhancement requires transition towards thinner wafers in near term and thin-films in the long term. Successful implementation of either of these alternatives must address intrinsic optical absorption limitation of Si. Bandgap engineering through integration with SixGe1-x layers offers an attractive, inexpensive option. With the help of PC1D software, role of SixGe1-x layers in conventional c-Si solar cells has been intensively investigated in both wafer and thin film configurations by varying Ge concentration, thickness, and placement. In wafer configuration, increase in Ge concentration leads to enhanced absorption through bandgap broadening with an efficiency enhancement of 8% for Ge concentrations of less than 20%. At higher Ge concentrations, despite enhanced optical absorption, efficiency is reduced due to substantial lowering of open-circuit voltage. In 5-25-μm thickness, thin-film solar cell configurations, efficiency gain in excess of 30% is achievable. Therefore, SixGe1-x based thin-film solar cells with an order of magnitude reduction in costly Si material are ideally-suited both in terms of high efficiency and cost. Recent research has demonstrated significant improvement in epitaxially grown SixGe1-x layers on nanostructured Si substrates, thereby enhancing potential of this approach for next generation of c-Si based photovoltaics.

  8. Study of proton-deuteron break-up reaction in exclusive experiment at 1 GeV

    International Nuclear Information System (INIS)

    Aleshin, N.P.; Belostotskij, S.L.; Dotsenko, Yu.V.

    1987-07-01

    The exclusive proton-deuteron break-up reaction pD yields ppn was studied at 1 GeV. Differential cross sections and polarizations of the final protons were measured in the range of neutron-spectator momenta 0 3 3 <0.2 GeV/c, respectively. The data obtained are well described within the framework of impulse approximation with the Paris wave function of the deuteron. (author)

  9. Dilepton spectroscopy at intermediate energies; the carbon - carbon reaction at 1 GeV/A; Spectroscopie des dileptons aux energies intermediaires; la reaction carbone - carbone A 1 GeV/A

    Energy Technology Data Exchange (ETDEWEB)

    Prunet, M

    1995-06-01

    The Physics context of this work is heavy ion collisions at relativistic energies where di-electron provide informations on the produced hot and dense nuclear matter. The experiment is performed by the DiLepton Spectrometer (DLS) Collaboration at the Lawrence Berkeley`s Bevalac. After a description of the apparatus, we review the whole program and the main results so far obtained: first evidence of a significant di-electron signal at energies above 1 GeV/A; improvement of the understanding of di-electron production (electromagnetic decays of hadrons, {pi}{sup +}{pi}{sup -} annihilation and hadronic Bremsstrahlung). The results of p-p, p-d reactions from 1 to 4.9 GeV/A show that hadronic Bremsstrahlung (pp, pn) should be reformulated. Our analysis, optimized on the reaction Carbon-Carbon at 1 GeV/A, has been applied to {alpha}-Ca and d-Ca. We have developed two main aspects: improvement of the time resolution (500 ps) in order to eliminate all of the protons. Improvement of the space resolution (300 {mu}) for better mass resolution, in particular in the {rho} region. We obtain the cross section of di-electron production as a function of mass, transverse momentum and rapidity from the C-C, {alpha}-Ca and d-Ca reactions at 1 GeV/A. We also compare the cross section for all of the measured systems at 1 GeV/A, including Ca-Ca, and we show a (ApAt){sup {alpha}} dependence with {alpha} {approx_equal} 1.1. A study of the associated multiplicity has also been performed. Nevertheless, the limited acceptance of the DLS and its poor mass resolution to identify the {rho}, {omega} vector mesons, do not allow to conclude on hadron behaviour in nuclear matter. This point is one of the main goal of the HADES project at GSI (Darmstadt), which we give a brief description of the main features. (authors). 60 refs.

  10. Measurements and Modelling of Nonlinear Chromaticity and Detuning with Amplitude at 26 GeV

    CERN Document Server

    Arduini, Gianluigi; Zimmermann, Frank; CERN. Geneva. SPS and LHC Division

    2001-01-01

    During electron-cloud MDs in October 2000, nonlinear chromaticity and amplitude-dependent detuning were measured with a 48-bunch LHC batch at 26 GeV. By fitting these data to an SPS optics model, we determine the magnitude of sextupole and decapole components in the SPS dipole magnets and octupole components in the quadrupoles which would be consistent with the measurement. Using the procedure developed, in the future the nonlinear SPS optics model can quickly be updated from a standard set of measurements.

  11. Multi-photon production in ee collisions at √(s) = 181-209 GeV

    International Nuclear Information System (INIS)

    Abbiendi, G.; Ainsley, C.; Aakesson, P.F.

    2003-01-01

    The process e + e - →γγ(γ) is studied using data collected by the OPAL detector at LEP between the years 1997 and 2000. The data set corresponds to an integrated luminosity of 672.3 pb -1 at centre-of-mass energies lying between 181 GeV and 209 GeV. Total and differential cross-sections are determined and found to be in good agreement with the predictions of QED. Fits to the observed angular distributions are used to set limits on parameters from several models of physics beyond the Standard Model such as cut-off parameters, contact interactions of the type e + e - γγ, gravity in extra spatial dimensions and excited electrons. In events with three photons in the final state the mass spectrum of photon pairs is investigated. No narrow resonance X→γγ is found and limits are placed on the product of the X γ production cross-section and branching ratio. (orig.)

  12. Progress report 2000 / 2001; Rapport d'activite 2000 / 2001

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-07-01

    The 2000-2001 period has seen many facts of importance for the EURATOM-Cea association. The first outstanding fact is the positive evolution of the ITER project because of both the willingness of the partners and the French proposition to the European Union to consider the Cadarache site as the European site. The second outstanding fact is both the installation on Tore-Supra of a new generation of plasma-facing component: the Ciel project and the launch of the Cimes project whose aim is to allow Tore-Supra to reach discharge up to 1000 s. The third outstanding fact is the continuation of experiments in Jet after 1999, end date of the Jet Joint Undertaking. These new provisions aim at maintaining in activity the spearhead of the European program, waiting for a clarification of the ITER situation. Among the results obtained in Jet operations, we can quote those having a direct influence on the ITER performances: - the beneficial effect of a high triangularity on the ELM (edge localized modes) and on the confinement factor at high density, - the real time control of advanced tokamak discharges at quasi steady state, and the theoretical explanation of the current hole (in lower hybrid advanced scenarios, a region with vanishing current density that appears in the plasma centre). (A.C.)

  13. Production of $D^{*\\pm}$ mesons in 250 GeV hadron--nucleon interacions and observation of the decay mode $D^0 \\pi^{\\pm}$, $D^0 \\to K^{\\mp} \\pi^{\\pm} \\pi^0$

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Sandra F. [Brazilian Center for Research in Physics, Rio de Janeiro (Brazil)

    1992-05-01

    The Fermilab experiment E769 collected approximately 400 billion events using a 250 GeV /c pion, haon and proton beam incident on targets of Al, Cu, Be and W. One measured the xF and p$2\\atop{T}$ di stributions of 232 ± 13.5 C* through the decay mode D0π, where D0 → Kππ0 without reconstructing the π0 . Fitting the distributions to the form A(l - xF )" and Be-bp$2\\atop{T}$, respectively, the values n = 4.14±0.31 ±0.03 and b = 0.68±0.06± 0.03 Gev-2 were found. The dependence of the cross section with the atomic number was measured and the fit to the curve Aα gave α= 1.06 ± .08 ± .01. Those measurements are compared with another analysis, with those of other experiments and with predictions based on pert urbative QCD.

  14. Design, Implementation and Applications of 3d Web-Services in DB4GEO

    Science.gov (United States)

    Breunig, M.; Kuper, P. V.; Dittrich, A.; Wild, P.; Butwilowski, E.; Al-Doori, M.

    2013-09-01

    The object-oriented database architecture DB4GeO was originally designed to support sub-surface applications in the geo-sciences. This is reflected in DB4GeO's geometric data model as well as in its import and export functions. Initially, these functions were designed for communication with 3D geological modeling and visualization tools such as GOCAD or MeshLab. However, it soon became clear that DB4GeO was suitable for a much wider range of applications. Therefore it is natural to move away from a standalone solution and to open the access to DB4GeO data by standardized OGC web-services. Though REST and OGC services seem incompatible at first sight, the implementation in DB4GeO shows that OGC-based implementation of web-services may use parts of the DB4GeO-REST implementation. Starting with initial solutions in the history of DB4GeO, this paper will introduce the design, adaptation (i.e. model transformation), and first steps in the implementation of OGC Web Feature (WFS) and Web Processing Services (WPS), as new interfaces to DB4GeO data and operations. Among its capabilities, DB4GeO can provide data in different data formats like GML, GOCAD, or DB3D XML through a WFS, as well as its ability to run operations like a 3D-to-2D service, or mesh-simplification (Progressive Meshes) through a WPS. We then demonstrate, an Android-based mobile 3D augmented reality viewer for DB4GeO that uses the Web Feature Service to visualize 3D geo-database query results. Finally, we explore future research work considering DB4GeO in the framework of the research group "Computer-Aided Collaborative Subway Track Planning in Multi-Scale 3D City and Building Models".

  15. Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

    Energy Technology Data Exchange (ETDEWEB)

    Paul, N.

    2007-10-26

    In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

  16. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10 8 photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H 2 atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs

  17. Inclusive dielectron cross sections in p+p and p+d interactions at beam energies from 1.04 to 4.88 GeV

    International Nuclear Information System (INIS)

    Wilson, W.K.; Beedoe, S.; Carroll, J.; Igo, G.; Seidl, P.; Toy, M.; Bossingham, R.; Gong, W.G.; Heilbronn, L.; Huang, H.Z.; Krebs, G.; Letessier-Selvon, A.; Magestro, D.; Matis, H.S.; Miller, J.; Naudet, C.; Porter, R.J.; Roche, G.; Schroeder, L.S.; Yegneswaran, A.; Bougteb, M.; Manso, F.; Prunet, M.; Roche, G.; Hallman, T.; Madansky, L.; Welsh, R.C.; Kirk, P.; Wang, Z.F.

    1998-01-01

    Measurements of dielectron production in p+p and p+d collisions with beam kinetic energies from 1.04 to 4.88 GeV are presented. The differential cross section is presented as a function of invariant pair mass, transverse momentum, and rapidity. The shapes of the mass spectra and their evolution with beam energy provide information about the relative importance of the various dielectron production mechanisms in this energy regime. The p+d to p+p ratio of the dielectron yield is also presented as a function of invariant pair mass, transverse momentum, and rapidity. The shapes of the transverse momentum and rapidity spectra from the p+d and p+p systems are found to be similar to one another for each of the beam energies studied. The beam energy dependence of the integrated cross sections is also presented. copyright 1998 The American Physical Society

  18. Ag-NP@Ge-nanotaper/Si-micropillar ordered arrays as ultrasensitive and uniform surface enhanced Raman scattering substrates.

    Science.gov (United States)

    Liu, Jing; Meng, Guowen; Li, Zhongbo; Huang, Zhulin; Li, Xiangdong

    2015-11-21

    Surface-enhanced Raman scattering (SERS) is considered to be an excellent candidate for analytical detection schemes, because of its molecular specificity, rapid response and high sensitivity. Here, SERS-substrates of Ag-nanoparticle (Ag-NP) decorated Ge-nanotapers grafted on hexagonally ordered Si-micropillar (denoted as Ag-NP@Ge-nanotaper/Si-micropillar) arrays are fabricated via a combinatorial process of two-step etching to achieve hexagonal Si-micropillar arrays, chemical vapor deposition of flocky Ge-nanotapers on each Si-micropillar and decoration of Ag-NPs onto the Ge-nanotapers through galvanic displacement. With high density three-dimensional (3D) "hot spots" created from the large quantities of the neighboring Ag-NPs and large-scale uniform morphology, the hierarchical Ag-NP@Ge-nanotaper/Si-micropillar arrays exhibit strong and reproducible SERS activity. Using our hierarchical 3D SERS-substrates, both methyl parathion (a commonly used pesticide) and PCB-2 (one congener of highly toxic polychlorinated biphenyls) with concentrations down to 10(-7) M and 10(-5) M have been detected respectively, showing great potential in SERS-based rapid trace-level detection of toxic organic pollutants in the environment.

  19. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    Science.gov (United States)

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  20. Magnetic properties of the germanides RE3Pt4Ge6 (RE=Y, Pr, Nd, Sm, Gd-Dy)

    International Nuclear Information System (INIS)

    Eustermann, Fabian; Eilers-Rethwisch, Matthias; Renner, Konstantin; Hoffmann, Rolf-Dieter; Poettgen, Rainer; Janka, Oliver; Oldenburg Univ.

    2017-01-01

    The germanides RE 3 Pt 4 Ge 6 (RE=Y, Pr, Nd, Sm, Gd-Dy) have been synthesized by arc-melting of the elements followed by inductive annealing to improve the crystallinity and allow for structural order. The compounds have been studied by powder X-ray diffraction; additionally the structure of Y 3 Pt 4 Ge 6 has been refined from single-crystal X-ray diffractometer data. It exhibits a (3+1)D modulated structure, indicating isotypism with Ce 3 Pt 4 Ge 6 . The crystal structure can be described as an intergrowth between YIrGe 2 - and CaBe 2 Ge 2 -type slabs along [100]. Temperature-dependent magnetic susceptibility measurements showed Pauli paramagnetism for Y 3 Pt 4 Ge 6 and Curie-Weiss paramagnetism for Pr 3 Pt 4 Ge 6 and Nd 3 Pt 4 Ge 6 . Sm 3 Pt 4 Ge 6 exhibits van Vleck paramagnetism, while antiferromagnetic ordering at T N =8.1(1) K and T N =11.0(1) K is observed for Gd 3 Pt 4 Ge 6 and Tb 3 Pt 4 Ge 6 , respectively.

  1. Crystal structure of LaFe5Ge3O15 = LaFe5[GeO4][Ge2O7]O4

    International Nuclear Information System (INIS)

    Genkina, E.A.; Maksimov, B.A.; Mill, B.V.

    1991-01-01

    The authors have determined the structure of a new lanthanum-iron germanate LaFe 5 [GeO 4 ][GeO 4 ][Ge 2 O 7 ]O 4 (a = 18.040(4), b = 17.012(4), c = 7.591(1) angstrom, V = 2330.2(9) angstrom 3 , Z = 8, ρ t = 4.99 g/cm 3 , space ground Cmca, 1976 I hkl ≥ 3 σ(I), R = 4.5%). The compound is interesting because the framework simultaneously contains ortho- and diorthogroups of Ge and because of a classical set of coordination numbers (4,5,6) characteristic of trivalent iron within the composition of one structure. The coordination polyhedron of La has nine vertices

  2. Unexpected Ge-Ge contacts in the two-dimensional Ge{sub 4}Se{sub 3}Te phase and analysis of their chemical cause with the density of energy (DOE) function

    Energy Technology Data Exchange (ETDEWEB)

    Kuepers, Michael; Konze, Philipp M.; Maintz, Stefan; Steinberg, Simon [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Mio, Antonio M.; Cojocaru-Miredin, Oana; Zhu, Min; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Mueller, Merlin; Mayer, Joachim [Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen University (Germany); Luysberg, Martina [Ernst-Ruska-Center, Forschungszentrum Juelich GmbH (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH Aachen University (Germany)

    2017-08-14

    A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe{sub 0.75}Te{sub 0.25} has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge{sub 4}Se{sub 3}Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge{sub 4}Se{sub 3}Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. \\'Elaboration du Ge m\\'esoporeux et \\'etude de ses propri\\'et\\'es physico-chimiques en vue d'applications photovolta\\"iques

    OpenAIRE

    Tutashkonko, Sergii

    2014-01-01

    Development of the new nanomaterial - the mesoporous Ge - by bipolar electrochemical etching (BEE) and analysis of its physico-chemical properties is the subject of this thesis. Formation of mesoporous Ge by electrochemical etching was previously reported in the literature. However, up to now, realization of thick (above 500 nm) mesoporous Ge layers with perfectly controlled morphology has been an issue. Indeed, the physico-chemical characterization of thin layers is much more complicated and...

  4. Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

    International Nuclear Information System (INIS)

    Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

    2008-01-01

    Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

  5. Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

    Science.gov (United States)

    Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

    2010-03-01

    It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

  6. Method of making active magnetic refrigerant materials based on Gd-Si-Ge alloys

    Science.gov (United States)

    Pecharsky, Alexandra O.; Gschneidner, Jr., Karl A.; Pecharsky, Vitalij K.

    2006-10-03

    An alloy made of heat treated material represented by Gd.sub.5(Si.sub.xGe.sub.1-x).sub.4 where 0.47.ltoreq.x.ltoreq.0.56 that exhibits a magnetic entropy change (-.DELTA.S.sub.m) of at least 16 J/kg K, a magnetostriction of at least 2000 parts per million, and a magnetoresistance of at least 5 percent at a temperature of about 300K and below, and method of heat treating the material between 800 to 1600 degrees C. for a time to this end.

  7. Electronic structure of Ge-2 and Ge-2 and thermodynamic properties of Ge-2 from all electron ab initio investigations and Knudsen effusion mass spectroscopic measurements

    DEFF Research Database (Denmark)

    Shim, Irene; Baba, M. Sai; Gingerich, K.A.

    2002-01-01

    The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term and for t......The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term...... excited states are presented. Thermal functions based on the theoretically determined molecular parameters were used to derive the thermodynamic properties of the Ge-2 molecule from new mass spectrometric equilibrium data. The literature value for the dissociation energy of Ge-2 has been re...

  8. Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

    Directory of Open Access Journals (Sweden)

    Atsushi Sugihara

    2015-06-01

    Full Text Available Mn\\(_3\\Ge has a tetragonal Heusler-like D0\\(_{22}\\ crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn\\(_3\\Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn\\(_3\\Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn\\(_3\\Ge on Rh show somewhat small coercivity (\\(H_{\\rm c}\\ = 12.6 kOe and a large perpendicular magnetic anisotropy (\\(K_{\\rm u}\\ = 11.6 Merg/cm\\(^3\\, comparable to that of the film grown on Cr.

  9. Single ferromagnetic fluctuations in UCoGe revealed by 73Ge- and 59Co-NMR studies

    Science.gov (United States)

    Manago, Masahiro; Ishida, Kenji; Aoki, Dai

    2018-02-01

    73Ge and 59Co nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) measurements have been performed on a 73Ge-enriched single-crystalline sample of the ferromagnetic superconductor UCoGe in the paramagnetic state. The 73Ge NQR parameters deduced from NQR and NMR are close to those of another isostructural ferromagnetic superconductor URhGe. The Knight shifts of the Ge and Co sites are well scaled to each other when the magnetic field is parallel to the b or c axis. The hyperfine coupling constants of Ge are estimated to be close to those of Co. The large difference of spin susceptibilities between the a and b axes could lead to the different response of the superconductivity and ferromagnetism with the field parallel to these directions. The temperature dependence of the nuclear spin-lattice relaxation rates 1 /T1 at the two sites is similar to each other above 5 K. These results indicate that the itinerant U-5 f electrons are responsible for the ferromagnetism in this compound, consistent with previous studies. The similarities and differences in the three ferromagnetic superconductors are discussed.

  10. Biotechnology 2000: a new German R&D programme

    OpenAIRE

    Ekkehard Warmuth

    1991-01-01

    Biotechnology 2000 is a German programme to continue the development of biotechnology started in 1982. It includes two new scientific fields for industrial innovation — genome research and neurobiology. Together with industry and the science community, the biotechnology programme will create a basis for future generations of biologically derived products and processes, including the development of safety precautions for the contained use of genetically modified organisms (GMOs) and of univers...

  11. 12 GeV detector technology at Jefferson Lab

    Energy Technology Data Exchange (ETDEWEB)

    Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

    2013-04-19

    The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

  12. Probing ge distribution in zeolite frameworks by post-synthesis introduction of fluoride in as-made materials

    KAUST Repository

    Liu, Xiaolong

    2012-08-14

    A new method has been developed to introduce fluoride in the structure of as-made germanium-containing zeolites prepared under pure alkaline media. Incorporation of fluoride species occurs without modification of the framework composition (Si/Ge ratio) and of the crystallinity, as evidenced by X-ray diffraction and electron microscopy. After incorporation, 19F solid-state NMR has been used to probe the location and distribution of Ge atoms in the framework. In the case of ITQ-13 and ITQ-17, which can be prepared from both hydroxide and fluoride routes, incorporated F anions are located in the same structural units as those occupied when zeolites are prepared in the presence of fluoride. In the case of ITQ-22 and ITQ-24, fluoride goes mainly in D4R units, which appear to be in the most energetically favorable positions for these zeolites. All experiments clearly show that zeolites prepared in the absence of fluoride in the synthesis medium are enriched in germanium, compared to the same materials obtained from F-containing gels. Moreover, Ge plays a strong structure-directing role by replacing Si atoms preferentially in D4R, leading to zeolites with mainly [4Si, 4Ge] units in the framework. In the particular case of ITQ-22, a new line observed around -2 ppm in 19F NMR spectra has been tentatively assigned to [3Si, 5Ge] D4R units, which corroborates the structural data obtained via X-ray diffraction. © 2012 American Chemical Society.

  13. Room Temperature Ferromagnetic Mn:Ge(001

    Directory of Open Access Journals (Sweden)

    George Adrian Lungu

    2013-12-01

    Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

  14. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Science.gov (United States)

    Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2018-01-01

    High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

  15. Experimental and theoretical investigations for site preference and anisotropic size change of RE{sub 11}Ge{sub 4}In{sub 6−x}M{sub x} (RE = La, Ce; M = Li, Ge; x = 1, 1.96)

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Beom-Yong; Jeon, Jieun [Department of Chemistry, Chungbuk National University, Cheongju, Chungbuk 361-763 (Korea, Republic of); Lee, Junseong [Department of Chemistry, Chonnam National University, Gwangju, Chonnam 500-757 (Korea, Republic of); Kim, Jongsik [Department of Chemistry, Dong-A University, Pusan 604-714 (Korea, Republic of); You, Tae-Soo [Department of Chemistry, Chungbuk National University, Cheongju, Chungbuk 361-763 (Korea, Republic of)

    2015-01-25

    Graphical abstract: Reported is experimental and theoretical studies to understand the site-preference between anionic elements and the anisotropic size-change of the 3-D anionic frameworks of two polar intermetallic compounds in the RE{sub 11}Ge{sub 4}In{sub 6−x}M{sub x} (RE = La, Ce; M = Li, Ge; x = 1, 1.96) phase. Indium atoms with a smaller electronegativity prefer to occupy the “dumbbell-site” having the smaller QVAL value, and the anisotropic size-change of the anionic framework in La{sub 11}Ge{sub 4}In{sub 5.00(1)}Li{sub 1.00} is rationalized by using various COHP curves analyses. - Highlights: • Site-preference between anions was elucidated by the QVAL value of each site. • Ten models with different atomic orderings were examined by coloring problems. • COHP curves explained the anisotropic size-change of La{sub 11}Ge{sub 4}In{sub 5.00(1)}Li{sub 1.00}. - Abstract: Two polar intermetallic compounds in the RE{sub 11}Ge{sub 4}In{sub 6−x}M{sub x} (RE = La, Ce; M = Li, Ge; x = 1, 1.96) series have been synthesized by conventional high-temperature reactions and characterized by both single-crystal and powder X-ray diffractions. Both compounds crystallized in the tetragonal crystal system (space group I4/mmm, Z = 4, Pearson symbol tI84) with nine crystallographically independent atomic positions in the asymmetric unit and adopted the Sm{sub 11}Ge{sub 4}In{sub 6}-type structure, which can be considered as an ordered version of the Ho{sub 11}Ge{sub 10}-type. The lattice parameters are a = 11.8370(4) Å and c = 17.2308(7) Å for La{sub 11}Ge{sub 4}In{sub 5.00(1)}Li{sub 1.00}; a = 11.8892(4) Å, c = 16.5736(7) Å for Ce{sub 11}Ge{sub 5.96(3)}In{sub 4.04}. The overall crystal structures of two isotypic compounds can be described as a combination of the cage-shaped 3-dimensional (3-D) anionic framework and three different types of cationic polyhedra filling the inside of the 3-D frameworks. Anionic elements consisting of the frameworks indicate the

  16. The study on Ge-68 production

    International Nuclear Information System (INIS)

    Yang, Seung Dae; Kim, Sang Wook; Hur, Min Goo

    2009-06-01

    The Ge-68 is a correction source of PET and is used in radiopharmaceuticals synthesis. This project is mainly aimed to produce the Ge-68. Based on this project results, the local Ge-68 production can be possible and the revitalization of the radioisotope utilization research areas can be accomplished. The characteristics of the Ge-68 and Ga-68 are obtained and analyzed. The production conditions are also developed, and the domestic and overseas status of the art are considered. The stacked foil target is designed using Al disc and dried Ga 2 O 3 powder, and the irradiation target is also designed. The cross section of the nat. Ga(p,xn) 68 Ge reaction is obtained using the developed target. The separation experiment of cold Ge/Ga in the H 2 SO 4 -HCl solution are carried out as a simulation experiment of the radioactive Ge/Ga sources. The separation of Ge/Ga by liquid extraction of CCl 4 in 8M HCl is also accomplished. And the synthesis experiment of the Hematophorphyrin-Ga complex is performed

  17. FY 2000 report on the results of the R and D of solid oxide fuel cells (SOFC); 2000 nendo kotai denkaishitsugata nenryo denchi no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-05-01

    Development of fuel cell power generation technology and R and D of solid oxide fuel cells were carried out, and reports of the FY 2000 results of companies were summed up. As to the R and D of the cell module, the R and D on the wet type cylinder module were made jointly by Toto Ltd., Kyushu Electric Power Co. and Nippon Steel Corp. As to the R and D of materials/basic technology, the following were conducted: evaluation of reliability of the cell module (evaluation of thermal cycle characteristics, etc.) by Chubu Electric Power Co., evaluation of reliability of the cell module (cell characteristics/stress evaluation) by Tokyo Gas Co. Ltd., cost reduction of cell materials (evaluation of chemical characteristics) by Central Research Institute of Electric Power Industry, and cost reduction of cell materials (evaluation of mechanical/thermal characteristics) by Japan Fine Ceramics Center. Concerning the system study, study of the system (adaptation fields of the small system and the optimization) was conducted by Nippon Steel Corp. (NEDO)

  18. Shallow acceptors in Ge/GeSi heterostructures with quantum wells in magnetic field

    International Nuclear Information System (INIS)

    Aleshkin, V.Ya.; Antonov, A.V.; Veksler, D.B.; Gavrilenko, V.I.; Erofeeva, I.V.; Ikonnikov, A.V.; Kozlov, D.V.; Spirin, K.E.; Kuznetsov, O.A.

    2005-01-01

    One investigated both theoretically and experimentally into shallow acceptors in Ge/GeSi heterostructures with quantum wells (QW) in a magnetic field. It is shown that alongside with lines of cyclotron resonance in magnetoabsorption spectra one observes transitions from the ground state of acceptor to the excited ones associated with the Landau levels from the first and the second subbands of dimensional quantization, and resonance caused by ionization of A + -centres. To describe impurity transitions in Ge/GeSi heterostructures with QW in a magnetic field and to interpret the experiment results in detail one uses numerical method of calculation based on expansion of wave function of acceptor in terms of basis of wave functions of holes in QW in the absence of magnetic field [ru

  19. Contribution des causes de décès aux gains en espérance de vie à 65 ans au Canada et l’influence de leur profil par âge, 1979-2007

    DEFF Research Database (Denmark)

    Bergeron Boucher, Marie-Pier

    variation par âge des causes de décès influencent les tendances des taux de mortalité par cause. Les résultats montrent que les progrès de l’espérance de vie à 65 ans sont encore majoritairement dus à la diminution de la mortalité liée aux maladies cardiovasculaires. Toutefois, ces dernières causes de décès...... dans l’évolution de l’espérance de vie proviennent de modifications dans les tendances de certaines causes de décès et de leurs interactions. Cette étude analyse la contribution respective de certaines causes de décès aux changements observés de l’espérance de vie, mais aussi comment les profils de...... ne sont pas les seules à contribuer aux progrès en espérance de vie, puisque les taux de mortalité des dix principales causes de décès au Canada ont connu une diminution depuis 1979, malgré des profils de variation par âge différents....

  20. Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

    International Nuclear Information System (INIS)

    Han Le; Zhang Xiong; Wang Sheng-Kai; Xue Bai-Qing; Liu Hong-Gang; Wu Wang-Ran; Zhao Yi

    2014-01-01

    We propose a modified thermal oxidation method in which an Al 2 O 3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO x interfacial layer, and obtain a superior Al 2 O 3 /GeO x /Ge gate stack. The GeO x interfacial layer is formed in oxidation reaction by oxygen passing through the Al 2 O 3 OBL, in which the Al 2 O 3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO x interfacial layer would dramatically decrease as the thickness of Al 2 O 3 OBL increases, which is beneficial to achieving an ultrathin GeO x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO x interfacial layer has little influence on the passivation effect of the Al 2 O 3 /Ge interface. Ge (100) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) using the Al 2 O 3 /GeO x /Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I on /I off ) ratio of above 1×10 4 , a subthreshold slope of ∼ 120 mV/dec, and a peak hole mobility of 265 cm 2 /V·s are achieved. (condensed matter: structural, mechanical, and thermal properties)

  1. GeNF - experimental report 2003

    International Nuclear Information System (INIS)

    Schreyer, A.; Vollbrandt, J.; Willumeit, R.

    2004-01-01

    At the Geesthacht Neutron Facility GeNF about 210 experiments were performed in 2003 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guest and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2003. The contributions may contain one or also several combined experiments. During 2003 the GKSS research reactor FRG-1 achieved an operation time of 252 days at the full 5 MW reactor power providing a neutron flux of ca. 1,4 x 10 14 thermal neutrons / cm 2 s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of metal alloys, the analysis of stresses in welds and technical structures at ARES, FSS, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR and ROeDI. The reflectomer TOREMA was thoroughly upgraded to the instrument NeRo and now offers new measurement possibilities. In the appendices the progress of the project REFSANS at FRM-II is reported as well as the experimental activities of the newly installed GKSS outstation HARWI-II at DESY. (orig.)

  2. GeNF - experimental report 2003

    Energy Technology Data Exchange (ETDEWEB)

    Schreyer, A; Vollbrandt, J; Willumeit, R [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. for Materials Research

    2004-07-01

    At the Geesthacht Neutron Facility GeNF about 210 experiments were performed in 2003 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guest and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2003. The contributions may contain one or also several combined experiments. During 2003 the GKSS research reactor FRG-1 achieved an operation time of 252 days at the full 5 MW reactor power providing a neutron flux of ca. 1,4 x 10{sup 14} thermal neutrons / cm{sup 2} s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of metal alloys, the analysis of stresses in welds and technical structures at ARES, FSS, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR and ROeDI. The reflectomer TOREMA was thoroughly upgraded to the instrument NeRo and now offers new measurement possibilities. In the appendices the progress of the project REFSANS at FRM-II is reported as well as the experimental activities of the newly installed GKSS outstation HARWI-II at DESY. (orig.)

  3. Annual report of department of research reactor, 2000. April 1, 2000 - March 31, 2001

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-02-01

    The Department of Research Reactor is responsible for the operation, Maintenance, utilization of the JRR-3 and the JRR-4 and for the related R and D. Besides RI production including its R and D are carried out. This report describes the activities of the department in fiscal year of 2000 and it also includes some of the technical topics on the works mentioned above. As for the research reactors, we carried out the operation, maintenance, the utilization of irradiation and neutron beam experiments, technical management including fuels and water chemistry, radiation monitoring as related R and D works. RI Production and its R and D works were conducted as well. The international cooperations between the developing countries and the department were also made concerning the operation, utilization and safety analysis for research reactors. Although the term 'JRR-3M' was used to denote the JRR-3M modified 1990 until the 2000 annual report of the Department of Research Reactor, the term 'JRR-3' will be used from this annual report because the JRR-3 has been operated for about 10 years since the modification and is now under further modification and upgrading study. (author)

  4. Sn-based Ge/Ge{sub 0.975}Sn{sub 0.025}/Ge p-i-n photodetector operated with back-side illumination

    Energy Technology Data Exchange (ETDEWEB)

    Chang, C.; Li, H.; Huang, S. H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Sun, G.; Soref, R. A. [Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)

    2016-04-11

    We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with the use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.

  5. Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

    Science.gov (United States)

    Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

    2018-06-01

    The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

  6. Study of the Solar Anisotropy for Cosmic Ray Primaries of about 200 GeV Energy with the L3+C Muon Detector

    CERN Document Server

    Achard, P; Aguilar-Benitez, M; van den Akker, M; Alcaraz, J; Alemanni, G; Allaby, J; Aloisio, A; Alviggi, M G; Anderhub, H; Andreev, Valery P; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Bajo, A; Baksay, G; Baksay, L; Bahr, J; Baldew, S V; Banerjee, S; Banerjee, Sw; Barczyk, A; Barillere, R; Bartalini, P; Basile, M; Batalova, N; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bellucci, L; Berbeco, R; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biglietti, M; Biland, A; Blaising, J J; Blyth, S C; Bobbink, G J; Bohm, A; Boldizsar, L; Borgia, B; Bottai, S; Bourilkov, D; Bourquin, M; Braccini, S; Branson, J G; Brochu, F; Burger, J D; Burger, W J; Cai, X D; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A; Casaus, J; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada, M; Chamizo, M; Chiarusi, T; Chang, Y H; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chiefari, G; Cifarelli, L; Cindolo, F; Clare, I; Clare, R; Coignet, G; Colino, N; Costantini, S; de la Cruz, B; Cucciarelli, S; van Dalen, J; de Asmundis, R; Deglon, P; Debreczeni, J; Degre, A; Dehmelt, K; Deiters, K; della Volpe, D; Delmeire, E; Denes, P; DeNotaristefani, F; De Salvo, A; Diemoz, M; Dierckxsens, M; Ding, L K; Dionisi, C; Dittmar, M; Doria, A; Dova, M T; Duchesneau, D; Duda, M; Duran, I; Echenard, B; Eline, A; El Hage, A; El Mamouni, H; Engler, A; Eppling, F J; Extermann, P; Faber, G; Falagan, M A; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, M; Ferguson, T; Fesefeldt, H; Fiandrini, E; Field, J H; Filthaut, F; Fisher, W; Fisk, I; Forconi, G; Freudenreich, K; Furetta, C; Galaktionov, Iouri; Ganguli, S N; Garcia-Abia, Pablo; Gataullin, M; Gentile, S; Giagu, S; Gong, Z F; Grabosch, H J; Grenier, G; Grimm, O; Groenstege, H; Gruenewald, M W; Guida, M; Guo, Y N; Gupta, S; Gupta, V K; Gurtu, A; Gutay, L J; Haas, D; Haller, Ch; Hatzifotiadou, D; Hayashi, Y; He, Z X; Hebbeker, T; Herve, Alain; Hirschfelder, J; Hofer, H; Hohlmann, M; Holzner, G; Hou, S R; Huo, A X; Hu, Y; Ito, N; Jin, B N; Jing, C L; Jones, Lawrence W; de Jong, P; Josa-Mutuberria, I; Kantserov, V; Kaur, M; Kawakami, S; Kienzle-Focacci, M N; Kim, J K; Kirkby, Jasper; Kittel, W; Klimentov, A; Konig, A C; Kok, E; Korn, A; Kopal, M; Koutsenko, V; Kraber, M; Kuang, H H; Kraemer, R W; Kruger, A; Kuijpers, J; Kunin, A; Ladron de Guevara, P; Laktineh, I; Landi, G; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Lei, Y; Leich, H; Leiste, R; Levtchenko, M; Levtchenko, P; Li, C; Li, L; Li, Z C; Likhoded, S; Lin, C H; Lin, W T; Linde, F L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, Y S; Luci, C; Luminari, L; Lustermann, W; Ma, W G; Ma, X H; Ma, Y Q; Malgeri, L; Malinin, A; Mana, C; Mans, J; Martin, J P; Marzano, F; Mazumdar, K; McNeil, R R; Mele, S; Meng, X W; Merola, L; Meschini, M; Metzger, W J; Mihul, A; van Mil, A; Milcent, H; Mirabelli, G; Mnich, J; Mohanty, G B; Monteleoni, B; Muanza, y G S; Muijs, A J M; Musicar, B; Musy, M; Nagy, S; Nahnhauer, R; Naumov, V A; Natale, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nisati, A; Novak, T; Kluge, Hannelies; Ofierzynski, R; Organtini, G; Pal, I; Palomares, C; Paolucci, P; Paramatti, R; Parriaud, J -F; Passaleva, G; Patricelli, S; Paul, Thomas Cantzon; Pauluzzi, M; Paus, C; Pauss, F; Pedace, M; Pensotti, S; Perret-Gallix, D; Petersen, B; Piccolo, D; Pierella, F; Pieri, M; Pioppi, M; Piroue, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pojidaev, V; Pothier, J; Prokofev, D; Quartieri, J; Qing, C R; Rahal-Callot, G; Rahaman, Mohammad Azizur; Raics, P; Raja, N; Ramelli, R; Rancoita, P G; Ranieri, R; Raspereza, A; Ravindran, K C; Razis, P; Ren, D; Rescigno, M; Reucroft, S; Rewiersma, P; Riemann, y S; Riles, Keith; Roe, B P; Rojkov, A; Romero, L; Rosca, A; Rosemann, C; Rosenbleck, C; Rosier-Lees, S; Roth, Stefan; Rubio, J A; Ruggiero, G; Rykaczewski, H; Saidi, R; Sakharov, A; Saremi, S; Sarkar, S; Salicio, J; Sanchez, E; Schafer, C; Schegelsky, V; Schmitt, V; Schoeneich, B; Schopper, H; Schotanus, D J; Sciacca, C; Servoli, L; Shen, C Q; Shevchenko, S; Shivarov, N; Shoutko, V; Shumilov, E; Shvorob, A; Son, D; Souga, C; Spillantini, P; Steuer, M; Stickland, D P; Stoyanov, B; Straessner, A; Sudhakar, K; Sulanke, H; Sultanov, G; Sun, L Z; Sushkov, S; Suter, H; Swain, J D; Szillasi, Z; Tang, X W; Tarjan, P; Tauscher, L; Taylor, L; Tellili, B; Teyssier, D; Timmermans, Charles; Ting, Samuel C C; Ting, S M; Tonwar, S C; Toth, J; Trowitzsch, G; Tully, C; Tung, K L; Ulbricht, J; Unger, M; Valente, E; Verkooijen, H; Van de Walle, R T; Vasquez, R; Veszpremi, V; Vesztergombi, G; Vetlitsky, I; Vicinanza, D; Viertel, G; Villa, S; Vivargent, M; Vlachos, S; Vodopianov, I; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Wadhwa, M; Wang, R G; Wang, Q; Wang, X L; Wang, X W; Wang, Z M; Weber, M; van Wijk, R; Wijnen, T A M; Wilkens, H; Wynhoff, S; Xia, L; Xu, Y P; Xu, J S; Xu, Z Z; Yamamoto, J; Yang, B Z; Yang, C G; Yang, H J; Yang, M; Yang, X F; Yao, Z G; Yeh, S C; Yu, Z Q; Zalite, An; Zalite, Yu; Zhang, C; Zhang, F; Zhang, J; Zhang, S; Zhang, Z P; Zhao, J; Zhou, S J; Zhu, G Y; Zhu, R Y; Zhuang, H L; Zhu, Q Q; Zichichi, A; Zimmermann, B; Zoller, M; Zwart, A N M

    2008-01-01

    Primary cosmic rays experience multiple deflections in the nonuniform galactic and heliospheric magnetic fields which may generate anisotropies. A study of anisotropies in the energy range between 100 and 500 GeV is performed. This energy range is not yet well explored. The L3 detector at the CERN electron-positron collider, LEP, is used for a study of the angular distribution of atmospheric muons with energies above 20 GeV. This distribution is used to investigate the isotropy of the time-dependent intensity of the primary cosmic-ray flux with a Fourier analysis. A small deviation from isotropy at energies around 200 GeV is observed for the second harmonics at the solar frequency. No sidereal anisotropy is found at a level above 10^-4. The measurements have been performed in the years 1999 and 2000.

  7. Experimental determination of the Ta–Ge phase diagram

    Energy Technology Data Exchange (ETDEWEB)

    Araújo Pinto da Silva, Antonio Augusto, E-mail: aaaps@ppgem.eel.usp.br [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Coelho, Gilberto Carvalho [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); UniFoa – Centro Universitário de Volta Redonda, Núcleo de Pesquisa, Campus Três Poços, Avenida Paulo Erlei Alves Abrantes, 1325, Bairro Três Poços, 27240-560 Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Suzuki, Paulo Atsushi [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Fiorani, Jean Marc; David, Nicolas; Vilasi, Michel [Université de Lorraine, Institut Jean Lamour, Faculté des Sciences et Technologies, BP 70239, F-54506 Vandoeuvre-lès-Nancy (France)

    2013-11-05

    Highlights: •Ta–Ge phase diagram propose for the first time. •The phase αTa{sub 5}Ge{sub 3} was not observed in samples investigated in this work. •Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. -- Abstract: In the present work, the Ta–Ge phase diagram has been experimentally studied, considering the inexistence of a Ta–Ge phase diagram in the literature. The samples were prepared via arc melting and characterized by Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray Diffraction (XRD). The intermetallics phases βTa{sub 3}Ge, αTa{sub 3}Ge, βTa{sub 5}Ge{sub 3} and TaGe{sub 2} where confirmed in this system. Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. The phases βTa{sub 3}Ge and βTa{sub 5}Ge{sub 3} solidifies congruently while TaGe{sub 2} is formed through a peritectic transformation. The temperature of the Ta-rich eutectic (L ↔ Ta{sub ss} + βTa{sub 3}Ge) was measured by the Pirani-Alterthum method at 2440 °C and the Ge-rich eutectic (L ↔ TaGe{sub 2} + Ge{sub ss}) by DTA at 937 °C.

  8. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  9. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  10. Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

    Science.gov (United States)

    Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

    2017-07-01

    Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

  11. Charged multiplicity distributions in anti np interactions at 6 GeV/c

    International Nuclear Information System (INIS)

    Batyunya, B.V.; Boguslavskij, I.B.; Gramenitskij, I.M.

    1980-01-01

    Inelastic topological anti np cross sections at 6 GeV/c have been determined based on a study of the charged multiplicity distribution in antideuteron-proton collisions at 12 GeV/c. The data were obtained in an exposure of the ''Ludmila'' JINR 2 m hydrogen bubble chamber at the Serpukhov accelerator. In anti np interactions average charged multiplicity and its ratio to dispersion, /D, were found to be 3.32+-0.13 and 1.86+-0.16, respectively. Comparison with anti pn, anti pp and pp data was made

  12. Measurement of the inclusive $D*^{+-}$ production in $\\gamma-\\gamma$ collisions at LEP

    CERN Document Server

    Heister, A.; Barate, R.; Bruneliere, R.; De Bonis, I.; Decamp, D.; Goy, C.; Jezequel, S.; Lees, J.P.; Martin, F.; Merle, E.; Minard, M.N.; Pietrzyk, B.; Trocme, B.; Bravo, S.; Casado, M.P.; Chmeissani, M.; Crespo, J.M.; Fernandez, E.; Fernandez-Bosman, M.; Garrido, L.; Martinez, M.; Pacheco, A.; Ruiz, H.; Colaleo, A.; Creanza, D.; De Filippis, N.; de Palma, M.; Iaselli, G.; Maggi, G.; Maggi, M.; Nuzzo, S.; Ranieri, A.; Raso, G.; Ruggieri, F.; Selvaggi, G.; Silvestris, L.; Tempesta, P.; Tricomi, A.; Zito, G.; Huang, X.; Lin, J.; Ouyang, Q.; Wang, T.; Xie, Y.; Xu, R.; Xue, S.; Zhang, J.; Zhang, L.; Zhao, W.; Abbaneo, D.; Azzurri, P.; Barklow, T.; Buchmuller, O.; Cattaneo, M.; Cerutti, F.; Clerbaux, B.; Drevermann, H.; Forty, R.W.; Frank, M.; Gianotti, F.; Hansen, J.B.; Harvey, J.; Hutchcroft, D.E.; Janot, P.; Jost, B.; Kado, M.; Mato, P.; Moutoussi, A.; Ranjard, F.; Rolandi, Gigi; Schlatter, D.; Sguazzoni, G.; Tejessy, W.; Teubert, F.; Valassi, A.; Videau, I.; Ward, J.J.; Badaud, F.; Dessagne, S.; Falvard, A.; Fayolle, D.; Gay, P.; Jousset, J.; Michel, B.; Monteil, S.; Pallin, D.; Pascolo, J.M.; Perret, P.; Hansen, J.D.; Hansen, J.R.; Hansen, P.H.; Kraan, A.; Nilsson, B.S.; Kyriakis, A.; Markou, C.; Simopoulou, E.; Vayaki, A.; Zachariadou, K.; Blondel, A.; Brient, J.C.; Machefert, F.; Rouge, A.; Swynghedauw, M.; Tanaka, R.; Videau, H.; Ciulli, V.; Focardi, E.; Parrini, G.; Antonelli, A.; Antonelli, M.; Bencivenni, G.; Bossi, F.; Capon, G.; Chiarella, V.; Laurelli, P.; Mannocchi, G.; Murtas, G.P.; Passalacqua, L.; Kennedy, J.; Lynch, J.G.; Negus, P.; O'Shea, V.; Thompson, A.S.; Wasserbaech, S.; Cavanaugh, R.; Dhamotharan, S.; Geweniger, C.; Hanke, P.; Hepp, V.; Kluge, E.E.; Leibenguth, G.; Putzer, A.; Stenzel, H.; Tittel, K.; Wunsch, M.; Beuselinck, R.; Cameron, W.; Davies, G.; Dornan, P.J.; Girone, M.; Hill, R.D.; Marinelli, N.; Nowell, J.; Rutherford, S.A.; Sedgbeer, J.K.; Thompson, J.C.; White, R.; Ghete, V.M.; Girtler, P.; Kneringer, E.; Kuhn, D.; Rudolph, G.; Bouhova-Thacker, E.; Bowdery, C.K.; Clarke, D.P.; Ellis, G.; Finch, A.J.; Foster, F.; Hughes, G.; Jones, R.W.L.; Pearson, M.R.; Robertson, N.A.; Smizanska, M.; van der Aa, O.; Delaere, C.; Lemaitre, V.; Blumenschein, U.; Holldorfer, F.; Jakobs, K.; Kayser, F.; Kleinknecht, K.; Muller, A.S.; Renk, B.; Sander, H.G.; Schmeling, S.; Wachsmuth, H.; Zeitnitz, C.; Ziegler, T.; Bonissent, A.; Coyle, P.; Curtil, C.; Ealet, A.; Fouchez, D.; Payre, P.; Tilquin, A.; Ragusa, F.; David, A.; Dietl, H.; Ganis, G.; Huttmann, K.; Lutjens, G.; Manner, W.; Moser, H.G.; Settles, R.; Wolf, G.; Boucrot, J.; Callot, O.; Davier, M.; Duflot, L.; Grivaz, J.F.; Heusse, P.; Jacholkowska, A.; Serin, L.; Veillet, J.J.; Yuan, C.; Bagliesi, Giuseppe; Boccali, T.; Foa, L.; Giammanco, A.; Giassi, A.; Ligabue, F.; Messineo, A.; Palla, F.; Sanguinetti, G.; Sciaba, A.; Tenchini, R.; Venturi, A.; Verdini, P.G.; Awunor, O.; Blair, G.A.; Cowan, G.; Garcia-Bellido, A.; Green, M.G.; Jones, L.T.; Medcalf, T.; Misiejuk, A.; Strong, J.A.; Teixeira-Dias, P.; Clifft, R.W.; Edgecock, T.R.; Norton, P.R.; Tomalin, I.R.; Bloch-Devaux, Brigitte; Boumediene, D.; Colas, P.; Fabbro, B.; Lancon, E.; Lemaire, M.C.; Locci, E.; Perez, P.; Rander, J.; Tuchming, B.; Vallage, B.; Konstantinidis, N.; Litke, A.M.; Taylor, G.; Booth, C.N.; Cartwright, S.; Combley, F.; Hodgson, P.N.; Lehto, M.; Thompson, L.F.; Boehrer, Armin; Brandt, S.; Grupen, C.; Hess, J.; Ngac, A.; Prange, G.; Sieler, U.; Borean, C.; Giannini, G.; He, H.; Putz, J.; Rothberg, J.; Armstrong, S.R.; Berkelman, Karl; Cranmer, K.; Ferguson, D.P.S.; Gao, Y.; Gonzalez, S.; Hayes, O.J.; Hu, H.; Jin, S.; Kile, J.; McNamara, P.A., III; Nielsen, J.; Pan, Y.B.; von Wimmersperg-Toeller, J.H.; Wiedenmann, W.; Wu, J.; Wu, Sau Lan; Wu, X.; Zobernig, G.; Dissertori, G.; CERN. Geneva

    2003-01-01

    The inclusive production of D$^{*\\pm}$ mesons in two-photon collisions is measured with the ALEPH detector at $\\epem$ centre-of-mass energies from 183$\\unit{GeV}$ to 209$\\unit{GeV}$. A total of $360 \\pm 27$ D$^{*\\pm}$ meson events were observed from an integrated luminosity of $699\\unit{pb^{-1}}$. Contributions from direct and single-resolved processes are separated using the ratio of the transverse momentum $p_{\\rmt}^{\\rm D^{*\\pm}}$ of the D$^{*\\pm}$ to the visible invariant mass $W_{\\mathrm{vis}}$ of the event. Differential cross sections of D$^{*\\pm}$ production as functions of $p_{\\rm t}^{\\rm D^{*\\pm}}$ and the pseudorapidity $|\\eta^{\\rm D^{*\\pm}}| $ are measured in the range $ 2\\unit{GeV}/c =197\\unit{GeV} } = 731 \\pm 74_{\\mathrm{stat}} \\pm 47_{\\mathrm{syst}} \\pm 157_{\\mathrm{extr}} \\unit{pb} $.

  13. Sharing Year 2000 Testing Information on DOD Information Technology Systems

    National Research Council Canada - National Science Library

    1998-01-01

    The audit objective was to determine whether planning for year 2000 testing is adequate to ensure that mission critical DoD information technology systems will continue to operate properly after the year 2000...

  14. Measurement of the gamma ray flux between 50 and 350 GeV from the Mrk 501 Blazar with the experiment CELESTE

    International Nuclear Information System (INIS)

    Brion, E.

    2005-10-01

    The blazar Mrk 501 has a non-thermal emission spectrum with 2 components. The first one, located between radio waves and X-rays, is due to the synchrotron emission of the magnetized jet, while the second one, emitted in the high energy gamma-ray domain, is still not fully understood. Until 1999, this last domain had only been covered between 100 MeV and 4 GeV as well as above 300 GeV. This energy gap was filled by the creation of the CELESTE experiment, recording Cherenkov emission produced by gamma-rays between 50 and 350 GeV penetrating the atmosphere. Mrk 501, which has a variable emission, was observed in 2000 and 2001, and was detected in 2000. A flux has been calculated which constrains the high energy emission models, presented in this thesis. Crab nebula flux measurements validate the method since this source is the standard candle for atmospheric Cherenkov telescopes. Analysis cuts for Mrk 501 are determined using data from the blazar Mrk 421, which has nearly the same declination as Mrk 501. Finally, improved detector simulations were used to calculate the effective area of the instrument, taking the atmosphere quality into account, yielding the flux for Mrk 501 during observations taken between April and June 2000. This flux was compared with a synchrotron self-Compton emission model and with data taken in X-rays. It shows that Mrk 501 was slightly more active during this period compared to the remainder of the year and to the year 2001. A flux upper limit is calculated for other measurements. This is the first measurement in the energy range 50 - 350 GeV (this range represents the limits in energy for which the trigger rate, that is the convolution between the source spectrum and the effective area of the instrument, is higher than 20% of the trigger maximum). It helps to constrain the position of the inverse Compton emission maximum and tends to favor, in this particular case, X- and gamma-ray emission processes from 2 different electron populations

  15. Multi-Photon Production in $e^{+}e^{-}$ collisions at $\\sqrt{s}$ = 181 - 209 GeV

    CERN Document Server

    Abbiendi, G.; Akesson, P.F.; Alexander, G.; Allison, John; Amaral, P.; Anagnostou, G.; Anderson, K.J.; Arcelli, S.; Asai, S.; Axen, D.; Azuelos, G.; Bailey, I.; Barberio, E.; Barlow, R.J.; Batley, R.J.; Bechtle, P.; Behnke, T.; Bell, Kenneth Watson; Bell, P.J.; Bella, G.; Bellerive, A.; Benelli, G.; Bethke, S.; Biebel, O.; Bloodworth, I.J.; Boeriu, O.; Bock, P.; Bonacorsi, D.; Boutemeur, M.; Braibant, S.; Brigliadori, L.; Brown, Robert M.; Buesser, K.; Burckhart, H.J.; Campana, S.; Carnegie, R.K.; Caron, B.; Carter, A.A.; Carter, J.R.; Chang, C.Y.; Charlton, David G.; Csilling, A.; Cuffiani, M.; Dado, S.; Dallavalle, G.Marco; Dallison, S.; De Roeck, A.; De Wolf, E.A.; Desch, K.; Dienes, B.; Donkers, M.; Dubbert, J.; Duchovni, E.; Duckeck, G.; Duerdoth, I.P.; Elfgren, E.; Etzion, E.; Fabbri, F.; Feld, L.; Ferrari, P.; Fiedler, F.; Fleck, I.; Ford, M.; Frey, A.; Furtjes, A.; Gagnon, P.; Gary, John William; Gaycken, G.; Geich-Gimbel, C.; Giacomelli, G.; Giacomelli, P.; Giunta, Marina; Goldberg, J.; Gross, E.; Grunhaus, J.; Gruwe, M.; Gunther, P.O.; Gupta, A.; Hajdu, C.; Hamann, M.; Hanson, G.G.; Harder, K.; Harel, A.; Harin-Dirac, M.; Hauschild, M.; Hauschildt, J.; Hawkes, C.M.; Hawkings, R.; Hemingway, R.J.; Hensel, C.; Herten, G.; Heuer, R.D.; Hill, J.C.; Hoffman, Kara Dion; Homer, R.J.; Horvath, D.; Howard, R.; Huntemeyer, P.; Igo-Kemenes, P.; Ishii, K.; Jeremie, H.; Jovanovic, P.; Junk, T.R.; Kanaya, N.; Kanzaki, J.; Karapetian, G.; Karlen, D.; Kartvelishvili, V.; Kawagoe, K.; Kawamoto, T.; Keeler, R.K.; Kellogg, R.G.; Kennedy, B.W.; Kim, D.H.; Klein, K.; Klier, A.; Kluth, S.; Kobayashi, T.; Kobel, M.; Komamiya, S.; Kormos, Laura L.; Kowalewski, Robert V.; Kramer, T.; Kress, T.; Krieger, P.; von Krogh, J.; Krop, D.; Kruger, K.; Kupper, M.; Lafferty, G.D.; Landsman, H.; Lanske, D.; Layter, J.G.; Leins, A.; Lellouch, D.; Letts, J.; Levinson, L.; Lillich, J.; Lloyd, S.L.; Loebinger, F.K.; Lu, J.; Ludwig, J.; Macpherson, A.; Mader, W.; Marcellini, S.; Marchant, T.E.; Martin, A.J.; Martin, J.P.; Masetti, G.; Mashimo, T.; Mattig, Peter; McDonald, W.J.; McKenna, J.; McMahon, T.J.; McPherson, R.A.; Meijers, F.; Mendez-Lorenzo, P.; Menges, W.; Merritt, F.S.; Mes, H.; Michelini, A.; Mihara, S.; Mikenberg, G.; Miller, D.J.; Moed, S.; Mohr, W.; Mori, T.; Mutter, A.; Nagai, K.; Nakamura, I.; Neal, H.A.; Nisius, R.; O'Neale, S.W.; Oh, A.; Okpara, A.; Oreglia, M.J.; Orito, S.; Pahl, C.; Pasztor, G.; Pater, J.R.; Patrick, G.N.; Pilcher, J.E.; Pinfold, J.; Plane, David E.; Poli, B.; Polok, J.; Pooth, O.; Przybycien, M.; Quadt, A.; Rabbertz, K.; Rembser, C.; Renkel, P.; Rick, H.; Roney, J.M.; Rosati, S.; Rozen, Y.; Runge, K.; Sachs, K.; Saeki, T.; Sahr, O.; Sarkisyan, E.K.G.; Schaile, A.D.; Schaile, O.; Scharff-Hansen, P.; Schieck, J.; Schoerner-Sadenius, Thomas; Schroder, Matthias; Schumacher, M.; Schwick, C.; Scott, W.G.; Seuster, R.; Shears, T.G.; Shen, B.C.; Shepherd-Themistocleous, C.H.; Sherwood, P.; Siroli, G.; Skuja, A.; Smith, A.M.; Sobie, R.; Soldner-Rembold, S.; Spagnolo, S.; Spano, F.; Stahl, A.; Stephens, K.; Strom, David M.; Strohmer, R.; Tarem, S.; Tasevsky, M.; Taylor, R.J.; Teuscher, R.; Thomson, M.A.; Torrence, E.; Toya, D.; Tran, P.; Trefzger, T.; Tricoli, A.; Trigger, I.; Trocsanyi, Z.; Tsur, E.; Turner-Watson, M.F.; Ueda, I.; Ujvari, B.; Vachon, B.; Vollmer, C.F.; Vannerem, P.; Verzocchi, M.; Voss, H.; Vossebeld, J.; Waller, D.; Ward, C.P.; Ward, D.R.; Watkins, P.M.; Watson, A.T.; Watson, N.K.; Wells, P.S.; Wengler, T.; Wermes, N.; Wetterling, D.; Wilson, G.W.; Wilson, J.A.; Wolf, G.; Wyatt, T.R.; Yamashita, S.; Zer-Zion, D.; Zivkovic, Lidija

    2003-01-01

    The process e+e- -> gamma gamma (gamma) is studied using data collected by the OPAL detector at LEP between the years 1997 and 2000. The data set corresponds to an integrated luminosity of 672.3pb-1 at centre-of-mass energies lying between 181 GeV and 209 GeV. Total and differential cross- sections are determined and found to be good agreement with the predictions of QED. Fits to the observed angular distributions are used to set limits on parameters from several models of physics beyond the Standard Model such as cut-off parameters, contact interactions of the type e+e-gamma gamma, gravity in extra spatial dimensions and excited electrons. In events with three photons in the final state the mass spectrum of photon pairs is investigated. No narrow resonance X-> gamma gamma is found and limits are placed on the product of the Xgamma production cross-section and branching ratio.

  16. Ge-rich graded-index Si1-xGex devices for MID-IR integrated photonics

    Science.gov (United States)

    Ramirez, J. M.; Vakarin, V.; Liu, Q.; Frigerio, J.; Ballabio, A.; Le Roux, X.; Benedikovic, D.; Alonso-Ramos, C.; Isella, G.; Vivien, L.; Marris-Morini, D.

    2018-02-01

    Mid-infrared (mid-IR) silicon photonics is becoming a prominent research with remarkable potential in several applications such as in early medical diagnosis, safe communications, imaging, food safety and many more. In the quest for the best material platform to develop new photonic systems, Si and Ge depart with a notable advantage over other materials due to the high processing maturity accomplished during the last part of the 20th century through the deployment of the CMOS technology. From an optical viewpoint, combining Si with Ge to obtain SiGe alloys with controlled stoichiometry is also of interest for the photonic community since permits to increase the effective refractive index and the nonlinear parameter, providing a fascinating playground to exploit nonlinear effects. Furthermore, using Ge-rich SiGe gives access to a range of deep mid-IR wavelengths otherwise inaccessible (λ 2-20 μm). In this paper, we explore for the first time the limits of this approach by measuring the spectral loss characteristic over a broadband wavelength range spanning from λ = 5.5 μm to 8.5 μm. Three different SiGe waveguide platforms are compared, each one showing higher compactness than the preceding through the engineering of the vertical Ge profile, giving rise to different confinement characteristics to the propagating modes. A flat propagation loss characteristic of 2-3 dB/cm over the entire wavelength span is demonstrated in Ge-rich graded-index SiGe waveguides of only 6 μm thick. Also, the role of the overlap fraction of the confined optical mode with the Si-rich area at the bottom side of the epitaxial SiGe waveguide is put in perspective, revealing a lossy characteristic compared to the other designs were the optical mode is located in the Ge-rich area at the top of the waveguide uniquely. These Ge-rich graded-index SiGe waveguides may pave the way towards a new generation of photonic integrated circuits operating at deep mid-IR wavelengths.

  17. Precision half-life measurement of .sup.140 La with Ge-detector

    Czech Academy of Sciences Publication Activity Database

    Adam, Jindřich; Belov, A. G.; Brandt, R.; Chaloun, P.; Honusek, Milan; Kalinnikov, V. G.; Krivopustov, M. I.; Kulakov, B. A.; Langrock, E. J.; Pronskikh, V. S.; Sosnin, A. N.; Stegailov, V. I.; Tsoupko-Sitnikov, V. M.; Wan, J. S.; Westmeier, W.

    2002-01-01

    Roč. 187, - (2002), s. 419-426 ISSN 0168-583X R&D Projects: GA AV ČR KSK1048102 Keywords : radioastive nuclei * Ge-detectors * half-life measurements Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.158, year: 2002

  18. Solid state synthesis of Mn{sub 5}Ge{sub 3} in Ge/Ag/Mn trilayers: Structural and magnetic studies

    Energy Technology Data Exchange (ETDEWEB)

    Myagkov, V.G.; Bykova, L.E.; Matsynin, A.A.; Volochaev, M.N.; Zhigalov, V.S.; Tambasov, I.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Mikhlin, Yu L. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation); Velikanov, D.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Bondarenko, G.N. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation)

    2017-02-15

    The thin-film solid-state reaction between elemental Ge and Mn across chemically inert Ag layers with thicknesses of (0, 0.3, 1 and 2.2 µm) in Ge/Ag/Mn trilayers was studied for the first time. The initial samples were annealed at temperatures between 50 and 500 °C at 50 °C intervals for 1 h. The initiation temperature of the reaction for Ge/Mn (without a Ag barrier layer) was ~ 120 °C and increased slightly up to ~ 250 °C when the Ag barrier layer thickness increased up to 2.2 µm. In spite of the Ag layer, only the ferromagnetic Mn{sub 5}Ge{sub 3} compound and the Nowotny phase were observed in the initial stage of the reaction after annealing at 500 °C. The cross-sectional studies show that during Mn{sub 5}Ge{sub 3} formation the Ge is the sole diffusing species. The magnetic and cross-sectional transmission electron microscopy (TEM) studies show an almost complete transfer of Ge atoms from the Ge film, via a 2.2 µm Ag barrier layer, into the Mn layer. We attribute the driving force of the long-range transfer to the long-range chemical interactions between reacting Mn and Ge atoms. - Graphical abstract: The direct visualization of the solid state reaction between Mn and Ge across a Ag buffer layer at 500 °C. - Highlights: • The migration of Ge, via an inert 2.2 µm Ag barrier, into a Mn layer. • The first Mn{sub 5}Ge{sub 3} phase was observed in reactions with different Ag layers. • The Ge is the sole diffusing species during Mn{sub 5}Ge{sub 3} formation • The long-range chemical interactions control the Ge atomic transfer.

  19. Coarsening of Ni–Ge solid-solution precipitates in “inverse” Ni3Ge alloys

    International Nuclear Information System (INIS)

    Ardell, Alan J.; Ma Yong

    2012-01-01

    Highlights: ► We report microstructural evolution of disordered Ni–Ge precipitates in Ni 3 Ge alloys. ► Coarsening kinetics and particle size distributions are presented. ► Data are analyzed quantitatively using the MSLW theory, but agreement is only fair. ► The shapes of large precipitates are unusual, with discus or boomerang cross-sections. ► Results are compared with morphology, kinetics of Ni–Al in inverse Ni 3 Al alloys. - Abstract: The morphological evolution and coarsening kinetics of Ni–Ge solid solution precipitates from supersaturated solutions of hypostoichiometric Ni 3 Ge were investigated in alloys containing from 22.48 to 23.50 at.% Ge at 600, 650 and 700 °C. The particles evolve from spheres to cuboids, though the flat portions of the interfaces are small. At larger sizes the precipitates coalesce into discus shapes, and are sometimes boomerang-shaped in cross section after intersection. The rate constant for coarsening increases strongly with equilibrium volume fraction, much more so than predicted by current theories; this is very different from the coarsening behavior of Ni 3 Ge precipitates in normal Ni–Ge alloys and of Ni–Al precipitates in inverse Ni 3 Al alloys. The activation energy for coarsening, 275.86 ± 24.17 kJ/mol, is somewhat larger than the result from conventional diffusion experiments, though within the limits of experimental error. Quantitative agreement between theory and experiment, estimated using available data on tracer diffusion coefficients in Ni 3 Ge, is fair, the calculated rate constants exceeding measured ones by a factor of about 15. The particle size distributions are not in very good agreement with the predictions of any theory. These results are discussed in the context of recent theories and observations.

  20. Activity report of the DPHD 2000; Rapport d'activite du DPHD 2000

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-07-01

    This report concerns the activities of the department of protection of health for man and dosimetry at I.P.S.N. for the year 2000. It studied and presents dosimetry, the first chapter is relative to external, internal and in case of accident, the second chapter discusses radiobiology and radio-pathology through biological dosimetry, diagnosis and prognosis of radioinduced damages and therapy of radioinduced damage, the third chapter is devoted to evaluation and management of risks with radiation protection, epidemiology and management of risks, the fourth chapter concerns the dosimetric and radio-toxicologic surveillance with the surveillance of internal exposure and the radio-toxicologic surveillance. (N.C.)

  1. Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

    Science.gov (United States)

    Fernando, Nalin S.; Nunley, T. Nathan; Ghosh, Ayana; Nelson, Cayla M.; Cooke, Jacqueline A.; Medina, Amber A.; Zollner, Stefan; Xu, Chi; Menendez, Jose; Kouvetakis, John

    2017-11-01

    Epitaxial Ge layers on a Si substrate experience a tensile biaxial stress due to the difference between the thermal expansion coefficients of the Ge epilayer and the Si substrate, which can be measured using asymmetric X-ray diffraction reciprocal space maps. This stress depends on temperature and affects the band structure, interband critical points, and optical spectra. This manuscripts reports careful measurements of the temperature dependence of the dielectric function and the interband critical point parameters of bulk Ge and Ge epilayers on Si using spectroscopic ellipsometry from 80 to 780 K and from 0.8 to 6.5 eV. The authors find a temperature-dependent redshift of the E1 and E1 + Δ1 critical points in Ge on Si (relative to bulk Ge). This redshift can be described well with a model based on thermal expansion coefficients, continuum elasticity theory, and the deformation potential theory for interband transitions. The interband transitions leading to E0‧ and E2 critical points have lower symmetry and therefore are not affected by the stress.

  2. Experimental study of the X-ray spectra optimization for computed radiography mammography systems; Investigacao experimental da otimizacao do espectro de raios X em sistemas de mamografia computadorizada

    Energy Technology Data Exchange (ETDEWEB)

    Tomal, Alessandra, E-mail: atomal@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campinas, SP (Brazil). Instituto de Fisica Gleb Wataghin; Cunha, Diego M. [Universidade Federal de Uberlandia (UFU), Uberlandia, MG (Brazil). Instituto de Fisica; Nogueira, Maria S. [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil); Gaspar, Fabio [Vigilancia Sanitaria, Campinas, SP (Brazil); Poletti, Martin E. [Universidade de Sao Paulo (USP), Ribeirao Preto, SP (Brazil). Faculdade de Filosofia, Ciencias e Letras. Departamento de Fisica

    2013-12-15

    Digital mammography is replacing screen-film mammography due to several advantages of digital receptors. The use of Computed Radiography (CR) mammography systems has been considered an alternative to achieve digital images with a low cost. Besides, the optimization of the X-ray spectrum, characterized by the anode/filter combination and tube potential, is an important step in order to improve the image quality with the lower dose to the breast. In this work, we investigated the optimal X-ray spectra using a figure of merit for two mammography equipment: Senographe DMR (General Electric Medical Systems) and Mammomat 3000 Nova (Siemens), both using an image plate Kodak EHR-M2 (Kodak DirectView). A PMMA phantom, simulating breast with thicknesses of 5 cm, was used. The anode/filter combinations evaluated were: Mo/Mo, Mo/Rh, Rh/Rh and Rh/Al for the Senographe system, and Mo/Mo, Mo/Rh, W/Rh for the Mammomat system, for all the intervals of tube potential range from 24 to 35 kVp. Results demonstrate that the higher values of FOM were achieved with the Rh/Rh at 29 kVp and Rh/Al at 26 kVp for the Senographe system, and for the W/Rh at 28 kVp in the Mammomat one. The reduction in the dose associated with the optimum spectra was 13 and 26% for the Senographe and Mammomat systems, respectively. Finally, our results suggest that anode/filter combinations of more energetic spectra than the standard Mo/Mo combination are recommended for thicker breast, in order to reduce the breast dose levels. (author)

  3. First-principles investigation of quantum transport in GeP3 nanoribbon-based tunneling junctions

    Science.gov (United States)

    Wang, Qiang; Li, Jian-Wei; Wang, Bin; Nie, Yi-Hang

    2018-06-01

    Two-dimensional (2D) GeP3 has recently been theoretically proposed as a new low-dimensional material [ Nano Lett. 17(3), 1833 (2017)]. In this manuscript, we propose a first-principles calculation to investigate the quantum transport properties of several GeP3 nanoribbon-based atomic tunneling junctions. Numerical results indicate that monolayer GeP3 nanoribbons show semiconducting behavior, whereas trilayer GeP3 nanoribbons express metallic behavior owing to the strong interaction between each of the layers. This behavior is in accordance with that proposed in two-dimensional GeP3 layers. The transmission coefficient T( E) of tunneling junctions is sensitive to the connecting formation between the central monolayer GeP3 nanoribbon and the trilayer GeP3 nanoribbon at both ends. The T( E) value of the bottom-connecting tunneling junction is considerably larger than those of the middle-connecting and top-connecting ones. With increases in gate voltage, the conductances increase for the bottom-connecting and middle-connecting tunneling junctions, but decrease for the top-connecting tunneling junctions. In addition, the conductance decreases exponentially with respect to the length of the central monolayer GeP3 nanoribbon for all the tunneling junctions. I-V curves show approximately linear behavior for the bottom-connecting and middle-connecting structures, but exhibit negative differential resistance for the top-connecting structures. The physics of each phenomenon is analyzed in detail.

  4. The missing GeV γ-ray binary: searching for HESS J0632+057 with Fermi-LAT

    NARCIS (Netherlands)

    Caliandro, G.A.; Hill, A.B.; Torres, D.F.; Hadasch, D.; Ray, P.; Abdo, A.; Hessels, J.W.T.; Ridolfi, A.; Possenti, A.; Burgay, M.; Rea, N.; Tam, P.H.T.; Dubois, R.; Dubus, G.; Glanzman, T.; Jogler, T.

    2013-01-01

    The very high energy (VHE; >100 GeV) source HESS J0632+057 has been recently confirmed as a γ-ray binary, a subclass of the high-mass X-ray binary population, through the detection of an orbital period of 321 d. We performed a deep search for the emission of HESS J0632+057 in the GeV energy range

  5. Synthesis, structure and electronic structure of a new polymorph of CaGe2

    International Nuclear Information System (INIS)

    Tobash, Paul H.; Bobev, Svilen

    2007-01-01

    Reported are the flux synthesis, the crystal structure determination, the properties and the band structure calculations of a new polymorph of CaGe 2 , which crystallizes with the hexagonal space group P6 3 mc (no. 186) with cell parameters of a=3.9966(9) and c=10.211(4)A (Z=2; Pearson's code hP6). The structure can be viewed as puckered layers of three-bonded germanium atoms, ∼ 2 [Ge 2 ] 2- , which are stacked along the direction of the c-axis in an ABAB-fashion. The germanium polyanionic layers are separated by the Ca cations. As such, this structure is closely related to the structure of the other CaGe 2 polymorph, which crystallizes with the rhombohedral CaSi 2 type in the R3-bar m space group (No. 166), where the ∼ 2 [Ge 2 ] 2- layers are arranged in an AA'BB'CC'-fashion, and are also interspaced by Ca 2+ cations. LMTO calculations suggest that in spite of the formal closed-shell configuration for all atoms and the apparent adherence to the Zintl rules for electron counting, i.e., Ca 2+ [3b-Ge 1- ] 2 ), the phase will be a poor metal due to a small Ca-3d-Ge-4p band overlap. Magnetic susceptibility measurements as a function of the temperature indicate that the new CaGe 2 polymorph exhibits weak, temperature independent, Pauli-paramagnetism

  6. A new test phantom with different breast tissue compositions for image quality assessment in conventional and digital mammography

    International Nuclear Information System (INIS)

    Pachoud, Marc; Lepori, D; Valley, Jean-Francois; Verdun, Francis R

    2004-01-01

    Our objective is to describe a new test phantom that permits the objective assessment of image quality in conventional and digital mammography for different types of breast tissue. A test phantom, designed to represent a compressed breast, was made from tissue equivalent materials. Three separate regions, with different breast tissue compositions, are used to evaluate low and high contrast resolution, spatial resolution and image noise. The phantom was imaged over a range of kV using a Contour 2000 (Bennett) mammography unit with a Kodak MinR 2190-MinR L screen-film combination and a Senograph 2000D (General Electric) digital mammography unit. Objective image quality assessments for different breast tissue compositions were performed using the phantom for conventional and digital mammography. For a similar mean glandular dose (MGD), the digital system gives a significantly higher contrast-to-noise ratio (CNR) than the screen-film system for 100% glandular tissue. In conclusion, in mammography, a range of exposure conditions is used for imaging because of the different breast tissue compositions encountered clinically. Ideally, the patient dose-image quality relationship should be optimized over the range of exposure conditions. The test phantom presented in this work permits image quality parameters to be evaluated objectively for three different types of breast tissue. Thus, it is a useful tool for optimizing the patient dose-image quality relationship

  7. PHOBOS at RHIC 2000

    Energy Technology Data Exchange (ETDEWEB)

    Back, B. B [Argonne National Laboratory (United States)] (and others)

    2001-12-01

    The relativistic heavy ion collider (RHIC) at Brookhaven national laboratory delivered in June 2000 the first collisions between Au nuclei at the highest center-of-mass energies achieved in a controlled environment to date. PHOBOS is one of the four experiments installed during this phase of RHIC running. This paper will describe the PHOBOS experiment, and discuss the results of the first physics measurement, the pseudo rapidity densities of primary charged particles near mid rapidity in central Au+Au collisions at two different energies, S{sub N}N{sup .}5=56 and 130 GeV. The observed densities are higher than those previously observed in any collisions, and the rate of increase between the two energies is larger than that for nucleon-nucleon collisions at comparable beam energies. This talk will describe the PHOBOS experiment, discuss the first physics measurement, and conclude with the present status of the experiment, the physics analysis and the perspectives for the future. [Spanish] El elativistic heavy ion collider (RHIC) en Brookhaven national laboratory produjo por primera vez colisiones de nucleos de oro (Au) a las energias mas altas alcanzadas en un medio ambiente controlado. PHOBOS es uno de los cuatro experimentos presentes en DIC durante su fase inicial. Este articulo describe en detalle a PHOBOS y discute los primeros resultados publicados acerca de la fisica de DIC, esto es la densidad de particulas primarias a id rapidity en colisiones centrales de Au+Au a dos diferentes energias S{sub N}N{sup .}5 =56 y 130 GeV. Las densidades observadas son mas altas que en cualquier otra experimento anterior, las densidades obtenidas son tambien mas altas que las encontradas en colisiones proton-proton a energias comparables. Este articulo tambien discute el estado actual del experimento asi como los planes para el futuro.

  8. Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2006-01-01

    .5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated......Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat...... conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7...

  9. Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kocak, B.; Ciftci, Y.O., E-mail: yasemin@gazi.edu.tr

    2016-05-15

    Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.

  10. Investigation of electrochemical reduction of GeO2 to Ge in molten CaCl2-NaCl

    International Nuclear Information System (INIS)

    Rong, Liangbin; He, Rui; Wang, Zhiyong; Peng, Junjun; Jin, Xianbo; Chen, George Z.

    2014-01-01

    Electrochemical reduction of solid GeO 2 has been investigated in the mixed CaCl 2 -NaCl melt at 1023 K for developing a more efficient process for preparation of Ge. Cyclic voltammetry and potentiostatic electrolysis were applied to study the GeO 2 -loaded metallic cavity electrode. In addition, porous GeO 2 pellets were reduced by potentiostatic and constant cell voltage electrolysis with a graphite anode, and the electrolysis products were analyzed by powder X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectrometry, focusing on understanding the reduction mechanism and the impact of electrode potential on the product purity. It was found that the reduction of GeO 2 to Ge occurred at a potential of about -0.50 V (vs. Ag/Ag + ), but generating various calcium germanates simultaneously, whose reduction was a little more difficult and needed a potential more negative than -1.00 V. However, if the cathode potential exceeded -1.60 V, Ca (or Na) - Ge intermetallic compounds might form. These results gave an appropriate potential range between -1.10 and -1.40 V for the production of pure germanium. Rapid electrolysis of GeO 2 to pure Ge has been realized at a cell voltage of 2.5 V with a current efficiency of about 92%

  11. Recherche d'informations sur Internet au collège et au lycée : méthode, commentaires et exemples

    OpenAIRE

    Beaufils, Alain

    2004-01-01

    Etude menée par l'INRP-Tecné (recherche 40123).; Dans deux établissements scolaires de la banlieue parisienne (collège et lycée), nous avons mené une observation sur quelques élèves volontaires de quatrième et de seconde. Leur tâche consistait à répondre à une question portant sur un thème assez large en utilisant des informations trouvées sur Internet et en limitant leur recherche aux documents rédigés en langue française. L'activité a eu lieu au CDI et comportait une séance d'entraînement s...

  12. The coarsening process of Ge precipitates in an Al-4 wt.% Ge alloy

    Energy Technology Data Exchange (ETDEWEB)

    Deaf, G.H

    2004-05-01

    In this paper the results of a quantitative transmission electron microscopy (TEM) investigation of the precipitation process of Ge in an Al-4 wt.% Ge alloy are described. Two crystallographic orientation relationships between the irregular germanium precipitate and aluminum matrix were found to be [1 0 0]{sub Ge} || [1 1 0]{sub Al} and [1 1 4]{sub Ge} || [1 0 0]{sub Al}. The irregular germanium precipitates formed on [0 0 1]{sub Al} habit planes. The origin of the irregular shape is due to the existence of a highly anisotropic interfacial energy as well as in an isotropic growth rate along <1 1 0>{sub A1} directions. Particles sizes were determined for variety of isothermal ageing times at 348, 423 and 523 K. The coarsening of the different morphologies of Ge precipitates was found to obey Ostwald ripening kinetics. The TEM results showed that the coarsening of irregular particles was due to the interfacial coalescence between these particles. Nine different morphologies have been distinguished in the form of (i) irregular particles, (ii) spheres, (iii) hexagonal plates, (iv) rods, (v) triangular plates, (vi) laths, (vii) small tetrahedra, (viii) rectangular plates, and (ix) Lamellae shape.

  13. The field-induced soliton phase of CuGeO3

    DEFF Research Database (Denmark)

    Rønnow, H.M.; Mechthild, E.; McMorrow, D.F.

    2003-01-01

    The quasi-1D S = 1/2 antiferromagnet CuGeO3 undergoes a spin-Peierls transition to a dimerised singlet quantum ground state, with S = 1 carrying pairs of domain walls as elementary excitations. Applying a large magnetic field, the domain walls-solitons-can be condensed into the ground state...

  14. Prompt neutrino production in 400 GeV proton copper interactions

    International Nuclear Information System (INIS)

    Graessler, H.; Dris, M.; Simopoulou, E.; Vayaki, A.; Barnham, K.W.J.; Miller, D.B.; Mobayyen, M.M.; Talebzadeh, M.; Aderholz, M.; Deck, L.; Schmitz, N.; Wittek, W.; Guy, J.; Venus, W.; Bolognese, T.; Faccini-Turluer, M.L.; Vignaud, D.; Hulth, P.O.; Hultqvist, K.; Walck, C.; Bostock, P.; Krstic, J.; Myatt, G.; Radojicic, D.

    1986-01-01

    The prompt electron neutrino and muon neutrino fluxes from proton copper interactions at 400 GeV/c proton momentum have been measured. The asymmetry between the prompt electron (anti)neutrino and the prompt muon (anti)neutrino event rates above 20 GeV is Asub(cμ)=(Nsub(e)-Nsub(μ))/Nsub(e)+Nsub(μ))=0.07+-0.08. The cross section weighted charge asymmetry for electrons and muons combined is Asub(ν)sub(anti ν)=0.15+-0.08. The number of anti D decays into anti νsub(e) and anti νsub(μ) is (4.1+-0.9) . 10 -4 per incident proton. No evidence for νsub(tau) interactions was found. (orig.)

  15. Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO{sub 2} interface after capping with Al{sub 2}O{sub 3} layer

    Energy Technology Data Exchange (ETDEWEB)

    Paleari, S., E-mail: s.paleari6@campus.unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Molle, A. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Accetta, F. [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Lamperti, A.; Cianci, E. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Fanciulli, M., E-mail: marco.fanciulli@unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy)

    2014-02-01

    The electrical activity of Ge dangling bonds is investigated at the interface between GeO{sub 2}-passivated Ge(1 1 1) substrate and Al{sub 2}O{sub 3} grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al{sub 2}O{sub 3}/GeO{sub 2}/Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices (<10{sup 10} cm{sup −2}). In particular, it is shown that capping the GeO{sub 2}-passivated Ge(1 1 1) with Al{sub 2}O{sub 3} has no impact on the microstructure of the Ge dangling bond.

  16. Measurement of inclusive and dijet D{sup *} meson cross sections in photoproduction at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Aaron, F.D. [National Institute for Physics and Nuclear Engineering (NIPNE), Bucharest (Romania); Bucharest Univ. (Romania). Faculty of Physics; Alexa, C. [National Institute for Physics and Nuclear Engineering (NIPNE), Bucharest (Romania); Andreev, V. [Lebedev Physical Insitute, Moscow (RU)] (and others)

    2011-12-15

    The inclusive photoproduction of D{sup *} mesons and of D{sup *}-tagged dijets is investigated with the H1 detector at the ep collider HERA. The kinematic region covers small photon virtualities Q{sup 2}<2 GeV{sup 2} and photon-proton centre-of-mass energies of 100GeV. Inclusive D{sup *} meson differential cross sections are measured for central rapidities vertical stroke {eta}(D{sup *}) vertical stroke <1.5 and transverse momenta p{sub T}(D{sup *})>1.8 GeV. The heavy quark production process is further investigated in events with at least two jets with transverse momentum p{sub T}(jet)>3.5 GeV each, one containing the D{sup *} meson. Differential cross sections for D{sup *}-tagged dijet production and for correlations between the jets are measured in the range vertical stroke {eta}(D{sup *}) vertical stroke <1.5 and p{sub T} (D{sup *})>2.1 GeV. The results are compared with predictions from Monte Carlo simulations and next-to-leading order perturbative QCD calculations. (orig.)

  17. Measurement of inclusive and dijet D{sup *} meson cross sections in photoproduction at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Aaron, F.D.; Alexa, C.; Rotaru, M.; Stoicea, G. [National Inst. for Physics and Nuclear Engineering, Bucharest (Romania); Andreev, V.; Belousov, A.; Eliseev, A.; Fomenko, A.; Gogitidze, N.; Lebedev, A.; Malinovski, E.; Rusakov, S.; Shtarkov, L.N.; Soloviev, Y.; Vazdik, Y. [Lebedev Physical Inst., Moscow (Russian Federation); Backovic, S.; Dubak, A.; Lastovicka-Medin, G.; Picuric, I.; Raicevic, N. [Univ. of Montenegro, Faculty of Science, Podgorica (ME); Baghdasaryan, A.; Baghdasaryan, S.; Zohrabyan, H. [Yerevan Physics Inst. (Armenia); Barrelet, E. [CNRS/IN2P3, LPNHE, Univ. Pierre et Marie Curie Paris 6, Univ. Denis Diderot Paris 7, Paris (France); Bartel, W.; Belov, P.; Brandt, G.; Brinkmann, M.; Britzger, D.; Campbell, A.J.; Eckerlin, G.; Elsen, E.; Felst, R.; Fischer, D.J.; Fleischer, M.; Gayler, J.; Ghazaryan, S.; Glazov, A.; Gouzevitch, M.; Grebenyuk, A.; Habib, S.; Haidt, D.; Helebrant, C.; Kleinwort, C.; Kogler, R.; Kraemer, M.; Levonian, S.; Lipka, K.; List, B.; List, J.; Meyer, A.B.; Meyer, J.; Niebuhr, C.; Nowak, K.; Olsson, J.E.; Pahl, P.; Panagoulias, I.; Papadopoulou, T.; Petrukhin, A.; Piec, S.; Pitzl, D.; Placakyte, R.; Radescu, V.; Schmitt, S.; Sefkow, F.; Shushkevich, S.; South, D.; Steder, M.; Wuensch, E. [DESY, Hamburg (Germany); Begzsuren, K.; Ravdandorj, T.; Tseepeldorj, B. [Inst. of Physics and Technology of the Mongolian Academy of Sciences, Ulaanbaatar (Mongolia); Bizot, J.C.; Brisson, V.; Delcourt, B.; Jacquet, M.; Pascaud, C.; Tran, T.H.; Zhang, Z.; Zomer, F. [CNRS/IN2P3, LAL, Univ. Paris-Sud, Orsay (France); Boenig, M.O.; Wegener, D. [TU Dortmund, Inst. fuer Physik, Dortmund (Germany); Boudry, V.; Moreau, F.; Specka, A. [CNRS/IN2P3, LLR, Ecole Polytechnique, Palaiseau (France); Bozovic-Jelisavcic, I.; Mudrinic, M.; Pandurovic, M.; Smiljanic, I. [Univ. of Belgrade, Vinca Inst. of Nuclear Sciences, Belgrade (RS); Bracinik, J.; Kenyon, I.R.; Newman, P.R.; Thompson, P.D. [Univ. of Birmingham (United Kingdom)] [and others

    2012-05-15

    The inclusive photoproduction of D {sup *} mesons and of D {sup *}-tagged dijets is investigated with the H1 detector at the ep collider HERA. The kinematic region covers small photon virtualities Q {sup 2}<2 GeV{sup 2} and photon-proton centre-of-mass energies of 100GeV. Inclusive D {sup *} meson differential cross sections are measured for central rapidities vertical stroke {eta}(D{sup *}) vertical stroke <1.5 and transverse momenta p{sub T}(D {sup *})>1.8 GeV. The heavy quark production process is further investigated in events with at least two jets with transverse momentum p{sub T} (jet) >3.5 GeV each, one containing the D{sup *} meson. Differential cross sections for D{sup *}-tagged dijet production and for correlations between the jets are measured in the range vertical stroke {eta}(D{sup *}) vertical stroke <1.5 and p{sub T}(D {sup *})>2.1 GeV. The results are compared with predictions from Monte Carlo simulations and next-to-leading order perturbative QCD calculations. (orig.)

  18. Annual report 2000. Department of wastes disposal and storage; Rapport annuel d'activite 2000. Departement d'Entreposage et de Stockage des Dechets

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-07-01

    This annual report presents the missions, the organization, the researches progress, the events, the publications and the personnel formation of the Department of wastes disposal and storage in the year 2000, one of the CEA fuel cycle Direction. (A.L.B.)

  19. Spectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides

    Science.gov (United States)

    Cheng, Cheng

    Non-crystalline thin film materials are widely used in the semiconductor industry (micro- and optoelectronics) and in green energy, e.g., photovolatic applications. This dissertation under-pins these device application with studies of their electronic structures using derivative X-ray Absorption Spectroscopy (XAS) and derivative Spectroscopic Ellipsometry (SE) for the first time to experimentally determine electronic and intrinsic defect structures. Differences between electron and hole mobilities in c- (and ng-Si) and c- (and ng- Ge), make Ge channels superior to Si channels in for aggressively scaled CMOS field effect transistors (FETs). Bonding between Si and Ge substrates and gate dielectric oxides is the focus this dissertation. The primary objective of this research is to measure and interpret by ab-initio theory the electronic and intrinsic electronic defect structures mirco-electronic thin film materials. This is accomplished for the first time by combining (i) derivative XAS TEY data obtained at the Stanford Synchrotron Radiation Light Source (SSRL) with (ii) derivative Spectroscopic Ellipsometry results obtained at the J.A. Woollam Co. laboratory. All the oxides were deposited in RPECVD system with in-line AES and RHEED. Thins films and gate stacks were annealed in RTA system in Ar to determine temperature dependent changes. 2nd derivative analysis is applied on XAS and SE spectra emphasizing the conduction band (CB) and virtual bound state (VBS) regimes. 2nd derivative SE spectra for ng-Si and ng-Ge each have 3 distinct regimes: (i) 3 excitons, (ii) 2 features in the CB edge region, and (iii) 3 additional exciton features above the IP. Excitonic spectral width provides conductivity electron masses (em0*) and hence electron mobilities. The wider the energy range, the higher the electron mobility in that CB. Spectra of high-K dielectrics have an additional energy regime between the CB edge regime, and the higher eV excitons. This regime has 4 intra-d state

  20. Measurement of the inclusive $D*^{+-}$ production in $\\gamma \\gamma$ collisions at LEP

    CERN Document Server

    Hess, J

    2004-01-01

    The inclusive production of D*/sup +or-/ mesons in two-photon collisions is measured with the ALEPH detector at e/sup +/e- centre- of-mass energies from 183 GeV to 209 GeV. A total of 360 +or- 27 D*+or- meson events are observed from an integrated luminosity of 699 pb/sup -1/. Contributions from direct and single-resolved processes are separated using the ratio of the transverse momentum p/sub t//sup D*+or-/ of the D*/sup +or-/ to the visible invariant mass W/sub vis/ of the event. Differential cross sections of D*+or- production as functions of p/sub t//sup D*+or-/ and the pseudorapidity ¿ eta D*/sup +or-/¿ are measured in the range 2 GeV/c =197 GeV/ = 731 +or- 74/sub stat/ +or- 47/sub Syst/ +or- 157/sub extr/ pb. (21 refs).

  1. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

    International Nuclear Information System (INIS)

    Zhang, Rui; Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi

    2013-01-01

    The ultrathin GeO x /Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al 2 O 3 /Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO x layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of ∼0.3 nm with an increase in the GeO x thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of ∼0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO x /Ge interfaces on Ge (100) and (111) surfaces.

  2. Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties.

    Science.gov (United States)

    Sims, Patrick E; Chizmeshya, Andrew V G; Jiang, Liying; Beeler, Richard T; Poweleit, Christian D; Gallagher, James; Smith, David J; Menéndez, José; Kouvetakis, John

    2013-08-21

    In this work, we extend our strategy previously developed to synthesize functional, crystalline Si(5-2y)(AlX)y {X = N,P,As} semiconductors to a new class of Ge-III-V hybrid compounds, leading to the creation of (InP)(y)Ge(5-2y) analogues. The compounds are grown directly on Ge-buffered Si(100) substrates using gas source MBE by tuning the interaction between Ge-based P(GeH3)3 precursors and In atoms to yield nanoscale "In-P-Ge3" building blocks, which then confer their molecular structure and composition to form the target solids via complete elimination of H2. The collateral production of reactive germylene (GeH2), via partial decomposition of P(GeH3)3, is achieved by simple adjustment of the deposition conditions, leading to controlled Ge enrichment of the solid product relative to the stoichiometric InPGe3 composition. High resolution XRD, XTEM, EDX, and RBS indicate that the resultant monocrystalline (InP)(y)Ge(5-2y) alloys with y = 0.3-0.7 are tetragonally strained and fully coherent with the substrate and possess a cubic diamond-like structure. Molecular and solid-state ab initio density functional theory (DFT) simulations support the viability of "In-P-Ge3" building-block assembly of the proposed crystal structures, which consist of a Ge parent crystal in which the P atoms form a third-nearest-neighbor sublattice and "In-P" dimers are oriented to exclude energetically unfavorable In-In bonding. The observed InP concentration dependence of the lattice constant is closely reproduced by DFT simulation of these model structures. Raman spectroscopy and ellipsometry are also consistent with the "In-P-Ge3" building-block interpretation of the crystal structure, while the observation of photoluminescence suggests that (InP)(y)Ge(5-2y) may have important optoelectronic applications.

  3. Direct observation of charmed-particle pairs produced in 340 GeV/c negative-pion interactions in an emulsion chamber

    International Nuclear Information System (INIS)

    Fuchi, H.; Hoshino, K.; Miyanishi, M.; Niu, K.; Niwa, K.; Shibuya, H.; Yanagisawa, Y.; Tasaka, S.; Maeda, Y.; Kimura, H.

    1981-01-01

    Among secondaries of 4323 interactions produced in an emulsion chamber exposed to a 340 GeV/c negative ion beam of CERN-SPS, 4 pairs of charmed particles were detected. The mean lifetime of D 0 (D 0 -bar) and the inclusive production cross-section of a charmed particle pair by 340 GeV/c pions were evaluated as (3.1sub(-1.6)sup(+ 2.0)) x 10 - 13 sec and 44 +- 22 μb. (author)

  4. Direct observation of charmed-particle pairs produced in 340 GeV/c negative-pion interactions in an emulsion chamber

    Energy Technology Data Exchange (ETDEWEB)

    Fuchi, H; Hoshino, K; Miyanishi, M; Niu, K; Niwa, K; Shibuya, H; Yanagisawa, Y [Nagoya Univ. (Japan). Dept. of Physics; Ushida, N [Faculty of Education, Aichi University of Education, Kariya, Aichi (Japan); Tasaka, S [Tokyo Univ., Tanashi (Japan). Inst. for Cosmic Ray Research; Maeda, Y

    1981-06-06

    Among secondaries of 4323 interactions produced in an emulsion chamber exposed to a 340 GeV/c negative ion beam of CERN-SPS, 4 pairs of charmed particles were detected. The mean lifetime of D/sup 0/(D/sup 0/-bar) and the inclusive production cross-section of a charmed particle pair by 340 GeV/c pions were evaluated as (3.1sub(-1.6)sup(+ 2.0)) x 10/sup -13/ sec and 44 +- 22 ..mu..b.

  5. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  6. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

  7. Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

    International Nuclear Information System (INIS)

    Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

    2011-01-01

    Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

  8. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    International Nuclear Information System (INIS)

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  9. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    International Nuclear Information System (INIS)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

    2012-01-01

    We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

  10. Year 2000 Conversion Program for Defense Critical Suppliers

    National Research Council Canada - National Science Library

    Granetto, Paul

    1999-01-01

    .... In Inspector General, DoD, Report No. 99-199 we indicated that, after a belated start, the DoD had developed a reasonable approach for reducing the risk of supply chain interruptions caused by year 2000 computer problems...

  11. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

    Science.gov (United States)

    Senaratne, C. L.; Wallace, P. M.; Gallagher, J. D.; Sims, P. E.; Kouvetakis, J.; Menéndez, J.

    2016-07-01

    Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%-16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ˜ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account

  12. The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

    Science.gov (United States)

    Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

    2018-03-01

    The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

  13. GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

    2016-07-11

    The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

  14. Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: structure and optical properties

    Science.gov (United States)

    Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2017-07-01

    Ge(x)[SiO2](1-x) (0.1  ⩽  x  ⩽  0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Ge x [SiO2](1-x) films with x  ⩾  0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeO x clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

  15. Improving the electrode performance of Ge through Ge@C core-shell nanoparticles and graphene networks.

    Science.gov (United States)

    Xue, Ding-Jiang; Xin, Sen; Yan, Yang; Jiang, Ke-Cheng; Yin, Ya-Xia; Guo, Yu-Guo; Wan, Li-Jun

    2012-02-08

    Germanium is a promising high-capacity anode material for lithium ion batteries, but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. A double protection strategy to improve the electrode performance of Ge through the use of Ge@C core-shell nanostructures and reduced graphene oxide (RGO) networks has been developed. The as-synthesized Ge@C/RGO nanocomposite showed excellent cycling performance and rate capability in comparison with Ge@C nanoparticles when used as an anode material for Li ion batteries, which can be attributed to the electronically conductive and elastic RGO networks in addition to the carbon shells and small particle sizes of Ge. The strategy is simple yet very effective, and because of its versatility, it may be extended to other high-capacity electrode materials with large volume variations and low electrical conductivities.

  16. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  17. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

    2016-04-07

    We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

  18. Inclusive D* Meson Cross Sections and D* Jet Correlations in Photoproduction at HERA

    CERN Document Server

    Aktas, A.; Anthonis, T.; Antunovic, B.; Aplin, S.; Asmone, A.; Astvatsatourov, A.; Babaev, A.; Backovic, S.; Baghdasaryan, A.; Baranov, P.; Barrelet, E.; Bartel, W.; Baudrand, S.; Baumgartner, S.; Beckingham, M.; Behnke, O.; Behrendt, O.; Belousov, A.; Berger, N.; Bizot, J.C.; Boenig, M.O.; Boudry, V.; Bracinik, J.; Brandt, G.; Brisson, V.; Bruncko, D.; Busser, F.W.; Bunyatyan, A.; Buschhorn, G.; Bystritskaya, L.; Campbell, A.J.; Caron, S.; Cassol-Brunner, F.; Cerny, K.; Cerny, V.; Chekelian, V.; Contreras, J.G.; Coughlan, J.A.; Cox, B.E.; Cozzika, G.; Cvach, J.; Dainton, J.B.; Dau, W.D.; Daum, K.; de Boer, Y.; Delcourt, B.; Del Degan, M.; De Roeck, A.; De Wolf, E.A.; Diaconu, C.; Dodonov, V.; Dubak, A.; Eckerlin, Guenter; Efremenko, V.; Egli, S.; Eichler, R.; Eisele, F.; Eliseev, A.; Elsen, E.; Essenov, S.; Falkewicz, A.; Faulkner, P.J.W.; Favart, L.; Fedotov, A.; Felst, R.; Feltesse, J.; Ferencei, J.; Finke, L.; Fleischer, M.; Flucke, G.; Fomenko, A.; Franke, G.; Frisson, T.; Gabathuler, E.; Garutti, E.; Gayler, J.; Gerlich, C.; Ghazaryan, Samvel; Ginzburgskaya, S.; Glazov, A.; Glushkov, I.; Goerlich, L.; Goettlich, M.; Gogitidze, N.; Gorbounov, S.; Grab, C.; Greenshaw, T.; Gregori, M.; Grell, B.R.; Grindhammer, G.; Gwilliam, C.; Habib, S.; Haidt, D.; Hansson, M.; Heinzelmann, G.; Henderson, R.C.W.; Henschel, H.; Herrera, G.; Hildebrandt, M.; Hiller, K.H.; Hoffmann, D.; Horisberger, R.; Hovhannisyan, A.; Hreus, T.; Hussain, S.; Ibbotson, M.; Ismail, M.; Jacquet, M.; Janssen, X.; Jemanov, V.; Jonsson, L.; Johnson, D.P.; Jung, Andreas Werner; Jung, H.; Kapichine, M.; Katzy, J.; Kenyon, I.R.; Kiesling, Christian M.; Klein, M.; Kleinwort, C.; Klimkovich, T.; Kluge, T.; Knies, G.; Knutsson, A.; Korbel, V.; Kostka, P.; Krastev, K.; Kretzschmar, J.; Kropivnitskaya, A.; Kruger, K.; Landon, M.P.J.; Lange, W.; Lastovicka-Medin, G.; Laycock, P.; Lebedev, A.; Leibenguth, G.; Lendermann, V.; Levonian, S.; Lindfeld, L.; Lipka, K.; Liptaj, A.; List, B.; List, J.; Lobodzinska, E.; Loktionova, N.; Lopez-Fernandez, R.; Lubimov, V.; Lucaci-Timoce, A.I.; Lueders, H.; Lux, T.; Lytkin, L.; Makankine, A.; Malden, N.; Malinovski, E.; Marage, P.; Marshall, R.; Marti, L.; Martisikova, M.; Martyn, H.U.; Maxfield, S.J.; Mehta, A.; Meier, K.; Meyer, A.B.; Meyer, H.; Meyer, J.; Michels, V.; Mikocki, S.; Milcewicz-Mika, I.; Milstead, D.; Mladenov, D.; Mohamed, A.; Moreau, F.; Morozov, A.; Morris, J.V.; Mozer, Matthias Ulrich; Muller, K.; Murin, P.; Nankov, K.; Naroska, B.; Naumann, T.; Newman, Paul R.; Niebuhr, C.; Nikiforov, A.; Nowak, G.; Nowak, K.; Nozicka, M.; Oganezov, R.; Olivier, B.; Olsson, J.E.; Osman, S.; Ozerov, D.; Palichik, V.; Panagoulias, I.; Papadopoulou, T.; Pascaud, C.; Patel, G.D.; Peng, H.; Perez, E.; Perez-Astudillo, D.; Perieanu, A.; Petrukhin, A.; Pitzl, D.; Placakyte, R.; Portheault, B.; Povh, B.; Prideaux, P.; Rahmat, A.J.; Raicevic, N.; Reimer, P.; Rimmer, A.; Risler, C.; Rizvi, E.; Robmann, P.; Roland, B.; Roosen, R.; Rostovtsev, A.; Rurikova, Z.; Rusakov, S.; Salvaire, F.; Sankey, D.P.C.; Sauter, M.; Sauvan, E.; Schmidt, S.; Schmitt, S.; Schmitz, C.; Schoeffel, L.; Schoning, A.; Schultz-Coulon, H.C.; Sefkow, F.; Shaw-West, R.N.; Sheviakov, I.; Shtarkov, L.N.; Sloan, T.; Smirnov, P.; Soloviev, Y.; South, D.; Spaskov, V.; Specka, Arnd E.; Steder, M.; Stella, B.; Stiewe, J.; Stoilov, A.; Straumann, U.; Sunar, D.; Tchoulakov, V.; Thompson, G.; Thompson, P.D.; Toll, T.; Tomasz, F.; Traynor, D.; Trinh, T.N.; Truoel, P.; Tsakov, I.; Tsipolitis, G.; Tsurin, I.; Turnau, J.; Tzamariudaki, E.; Urban, K.; Urban, Marcel; Usik, A.; Utkin, D.; Valkarova, A.; Vallee, C.; Van Mechelen, P.; Vargas Trevino, A.; Vazdik, Y.; Veelken, C.; Vinokurova, S.; Volchinski, V.; Wacker, K.; Weber, G.; Weber, R.; Wegener, D.; Werner, C.; Wessels, M.; Wessling, B.; Wissing, C.; Wolf, R.; Wunsch, E.; Xella, S.; Yan, W.; Yeganov, V.; Zacek, J.; Zalesak, J.; Zhang, Z.; Zhelezov, A.; Zhokin, A.; Zhu, Y.C.; Zimmermann, J.; Zimmermann, T.; Zohrabyan, H.; Zomer, F.

    2007-01-01

    Differential photoproduction cross sections are measured for events containing D* mesons. The data were taken with the H1 detector at the ep collider HERA and correspond to an integrated luminosity of 51.1 pb-1. The kinematic region covers small photon virtualities Q^2 < 0.01 GeV^2 and photon-proton centre-of-mass energies of 171 < W_gammap < 256 GeV. The details of the heavy quark production process are further investigated in events with one or two jets in addition to the D* meson. Differential cross sections for D* jet production are determined and the correlations between the D* meson and the jet(s) are studied. The results are compared with perturbative QCD predictions applying collinear- or kt -factorisation.

  19. evaluation d'alternatives d'economie d'eau dans les systemes de ...

    African Journals Online (AJOL)

    tic s of s o ils a nd the cu ltu ra l c alen d ar o f th e. O ffice d u. N ig e r. Site arro se ur/. Effic ie n c e. Bes oins. Nets. Bes oins. Nets. Bes oins bru ts. Bes oins bru ts. Débit fictif con tinu de. Débit fic tif c on tin u de. (type so l) du ré se au d'irriga tion en d. 'irrig ation en d. 'irrig ation en d'irriga tion en p ointe en. Hiverna ge po in.

  20. Study of charged-current ep interactions at Q2 > 200 GeV2 with the ZEUS detector at HERA

    International Nuclear Information System (INIS)

    Derrick, M.; Krakauer, D.; Magill, S.

    1996-06-01

    Deep inelastic charged-current reactions have been studied in e + p and e - p collisions at a center of mass energy of about 300 GeV in the kinematic region Q 2 >200 GeV 2 and x>0.006 using the ZEUS detector at HERA. The integrated cross sections for Q 2 >200 GeV 2 are found to be σ e + p→ anti νX =30.3 -4.2-2.6 +5.5+1.6 pb and σ e - p→νX =54.7 -9.8-3.4 +15.9+2.8 pb. Differential cross sections have been measured as functions of the variables x, y and Q 2 . From the measured differential cross sections dσ/dQ 2 , the W boson mass is determined to be M W =79 -7-4 +8+4 GeV. Measured jet rates and transverse energy profiles agree with model predictions. A search for charged-current interactions with a large rapidity gap yielded one candidate event, corresponding to a cross section σ e + p→ anti νX (Q 2 >200 GeV 2 ; η max -0.7 +1.8 ±0.1 pb. (orig.)

  1. Observation of a Neutral Charmoniumlike State Z(c)(0) in e(+)e(-) -> (D*(D)over-bar*)(0)pi(0)

    NARCIS (Netherlands)

    Ablikim, M.; Achasov, M. N.; Ai, X. C.; Albayrak, O.; Albrecht, M.; Ambrose, D. J.; Amoroso, A.; An, F. F.; An, Q.; Bai, J. Z.; Ferroli, R. Baldini; Ban, Y.; Bennett, D. W.; Bennett, J. V.; Bertani, M.; Bettoni, D.; Bian, J. M.; Bianchi, F.; Boger, E.; Boyko, I.; Briere, R. A.; Cai, H.; Cai, X.; Cakir, O.; Calcaterra, A.; Cao, G. F.; Cetin, S. A.; Chang, J. F.; Chelkov, G.; Chen, G.; Chen, H. S.; Chen, H. Y.; Chen, J. C.; Chen, M. L.; Chen, S. J.; Chen, X.; Chen, X. R.; Chen, Y. B.; Cheng, H. P.; Chu, X. K.; Cibinetto, G.; Dai, H. L.; Dai, J. P.; Dbeyssi, A.; Dedovich, D.; Deng, Z. Y.; Denig, A.; Denysenko, I.; Destefanis, M.; De Mori, F.; Ding, Y.; Dong, C.; Dong, J.; Dong, L. Y.; Dong, M. Y.; Du, S. X.; Duan, P. F.; Eren, E. E.; Fan, J. Z.; Fang, J.; Fang, S. S.; Fang, X.; Fang, Y.; Fava, L.; Feldbauer, F.; Felici, G.; Feng, C. Q.; Fioravanti, E.; Fritsch, M.; Fu, C. D.; Gao, Q.; Gao, X. Y.; Gao, Y.; Gao, Z.; Garzia, I.; Geng, C.; Goetzen, K.; Gong, W. X.; Gradl, W.; Greco, M.; Gu, M. H.; Gu, Y. T.; Guan, Y. H.; Guo, A. Q.; Guo, L. B.; Guo, Y.; Guo, Y. P.; Haddadi, Z.; Hafner, A.; Han, S.; Han, Y. L.; Hao, X. Q.; Harris, F. A.; He, K. L.; He, Z. Y.; Held, T.; Heng, Y. K.; Hou, Z. L.; Hu, C.; Hu, H. M.; Hu, J. F.; Hu, T.; Hu, Y.; Huang, G. M.; Huang, G. S.; Huang, H. P.; Huang, J. S.; Huang, X. T.; Huang, Y.; Hussain, T.; Ji, Q.; Ji, Q. P.; Ji, X. B.; Ji, X. L.; Jiang, L. L.; Jiang, L. W.; Jiang, X. S.; Jiang, X. Y.; Jiao, J. B.; Jiao, Z.; Jin, D. P.; Jin, S.; Johansson, T.; Julin, A.; Kalantar-Nayestanaki, N.; Kang, X. L.; Kang, X. S.; Kavatsyuk, M.; Ke, B. C.; Kiese, P.; Kliemt, R.; Kloss, B.; Kolcu, O. B.; Kopf, B.; Kornicer, M.; Kuehn, W.; Kupsc, A.; Lange, J. S.; Lara, M.; Larin, P.; Leng, C.; Li, C.; Li, C. H.; Li, Cheng; Li, D. M.; Li, F.; Li, G.; Li, H. B.; Li, J. C.; Li, Jin; Li, K.; Li, K.; Li, Lei; Li, P. R.; Li, T.; Li, W. D.; Li, W. G.; Li, X. L.; Li, X. M.; Li, X. N.; Li, X. Q.; Li, Z. B.; Liang, H.; Liang, Y. F.; Liang, Y. T.; Liao, G. R.; Lin, D. X.; Liu, B. J.; Liu, C. X.; Liu, F. H.; Liu, Fang; Liu, Feng; Liu, H. B.; Liu, H. H.; Liu, H. H.; Liu, H. M.; Liu, J.; Liu, J. B.; Liu, J. P.; Liu, J. Y.; Liu, K.; Liu, K. Y.; Liu, L. D.; Liu, P. L.; Liu, Q.; Liu, S. B.; Liu, X.; Liu, X. X.; Liu, Y. B.; Liu, Z. A.; Liu, Zhiqiang; Liu, Zhiqing; Loehner, H.; Lou, X. C.; Lu, H. J.; Lu, J. G.; Lu, R. Q.; Lu, Y.; Lu, Y. P.; Luo, C. L.; Luo, M. X.; Luo, T.; Luo, X. L.; Lv, M.; Lyu, X. R.; Ma, F. C.; Ma, H. L.; Ma, L. L.; Ma, Q. M.; Ma, T.; Ma, X. N.; Ma, X. Y.; Maas, F. E.; Maggiora, M.; Mao, Y. J.; Mao, Z. P.; Marcello, S.; Messchendorp, J. G.; Min, J.; Min, T. J.; Mitchell, R. E.; Mo, X. H.; Mo, Y. J.; Morales, C. Morales; Moriya, K.; Muchnoi, N. Yu.; Muramatsu, H.; Nefedov, Y.; Nerling, F.; Nikolaev, I. B.; Ning, Z.; Nisar, S.; Niu, S. L.; Niu, X. Y.; Olsen, S. L.; Ouyang, Q.; Pacetti, S.; Patteri, P.; Pelizaeus, M.; Peng, H. P.; Peters, K.; Pettersson, J.; Ping, J. L.; Ping, R. G.; Poling, R.; Prasad, V.; Pu, Y. N.; Qi, M.; Qian, S.; Qiao, C. F.; Qin, L. Q.; Qin, N.; Qin, X. S.; Qin, Y.; Qin, Z. H.; Qiu, J. F.; Rashid, K. H.; Redmer, C. F.; Ren, H. L.; Ripka, M.; Rong, G.; Rosner, Ch.; Ruan, X. D.; Santoro, V.; Sarantsev, A.; Savrie, M.; Schoenning, K.; Schumann, S.; Shan, W.; Shao, M.; Shen, C. P.; Shen, P. X.; Shen, X. Y.; Sheng, H. Y.; Song, W. M.; Song, X. Y.; Sosio, S.; Spataro, S.; Sun, G. X.; Sun, J. F.; Sun, S. S.; Sun, Y. J.; Sun, Y. Z.; Sun, Z. J.; Sun, Z. T.; Tang, C. J.; Tang, X.; Tapan, I.; Thorndike, E. H.; Tiemens, M.; Ullrich, M.; Uman, I.; Varner, G. S.; Wang, B.; Wang, B. L.; Wang, D.; Wang, D. Y.; Wang, K.; Wang, L. L.; Wang, L. S.; Wang, M.; Wang, P.; Wang, P. L.; Wang, S. G.; Wang, W.; Wang, X. F.; Wang, Y. D.; Wang, Y. F.; Wang, Y. Q.; Wang, Z.; Wang, Z. G.; Wang, Z. H.; Wang, Z. Y.; Weber, T.; Wei, D. H.; Wei, J. B.; Weidenkaff, P.; Wen, S. P.; Wiedner, U.; Wolke, M.; Wu, L. H.; Wu, Z.; Xia, L. G.; Xia, Y.; Xiao, D.; Xiao, Z. J.; Xie, Y. G.; Xiu, Q. L.; Xu, G. F.; Xu, L.; Xu, Q. J.; Xu, Q. N.; Xu, X. P.; Yan, L.; Yan, W. B.; Yan, W. C.; Yan, Y. H.; Yang, H. J.; Yang, H. X.; Yang, L.; Yang, Y.; Yang, Y. X.; Ye, H.; Ye, M.; Ye, M. H.; Yin, J. H.; Yu, B. X.; Yu, C. X.; Yu, H. W.; Yu, J. S.; Yuan, C. Z.; Yuan, W. L.; Yuan, Y.; Yuncu, A.; Zafar, A. A.; Zallo, A.; Zeng, Y.; Zhang, B. X.; Zhang, B. Y.; Zhang, C.; Zhang, C. C.; Zhang, D. H.; Zhang, H. H.; Zhang, H. Y.; Zhang, J. J.; Zhang, J. L.; Zhang, J. Q.; Zhang, J. W.; Zhang, J. Y.; Zhang, J. Z.; Zhang, K.; Zhang, L.; Zhang, S. H.; Zhang, X. Y.; Zhang, Y.; Zhang, Y. N.; Zhang, Y. H.; Zhang, Y. T.; Zhang, Yu; Zhang, Z. H.; Zhang, Z. P.; Zhang, Z. Y.; Zhao, G.; Zhao, J. W.; Zhao, J. Y.; Zhao, J. Z.; Zhao, Lei; Zhao, Ling; Zhao, M. G.; Zhao, Q.; Zhao, Q. W.; Zhao, S. J.; Zhao, T. C.; Zhao, Y. B.; Zhao, Z. G.; Zhemchugov, A.; Zheng, B.; Zheng, J. P.; Zheng, W. J.; Zheng, Y. H.; Zhong, B.; Zhou, L.; Zhou, Li; Zhou, X.; Zhou, X. K.; Zhou, X. R.; Zhou, X. Y.; Zhu, K.; Zhu, K. J.; Zhu, S.; Zhu, X. L.; Zhu, Y. C.; Zhu, Y. S.; Zhu, Z. A.; Zhuang, J.; Zotti, L.; Zou, B. S.; Zou, J. H.

    2015-01-01

    We report a study of the process e(+)e(-) -> (D*(D) over bar*)(0)pi(0) using e(+)e(-) collision data samples with integrated luminosities of 1092 pb(-1) at root s = 4.23 GeV and 826 pb(-1) at root s = 4.26 GeV collected with the BESIII detector at the BEPCII storage ring. We observe a new neutral

  2. Parity violation constraints using cosmic microwave background polarization spectra from 2006 and 2007 observations by the QUaD polarimeter.

    Science.gov (United States)

    Wu, E Y S; Ade, P; Bock, J; Bowden, M; Brown, M L; Cahill, G; Castro, P G; Church, S; Culverhouse, T; Friedman, R B; Ganga, K; Gear, W K; Gupta, S; Hinderks, J; Kovac, J; Lange, A E; Leitch, E; Melhuish, S J; Memari, Y; Murphy, J A; Orlando, A; Piccirillo, L; Pryke, C; Rajguru, N; Rusholme, B; Schwarz, R; O'Sullivan, C; Taylor, A N; Thompson, K L; Turner, A H; Zemcov, M

    2009-04-24

    We constrain parity-violating interactions to the surface of last scattering using spectra from the QUaD experiment's second and third seasons of observations by searching for a possible systematic rotation of the polarization directions of cosmic microwave background photons. We measure the rotation angle due to such a possible "cosmological birefringence" to be 0.55 degrees +/-0.82 degrees (random) +/-0.5 degrees (systematic) using QUaD's 100 and 150 GHz temperature-curl and gradient-curl spectra over the spectra over the multipole range 2002000, consistent with null, and constrain Lorentz-violating interactions to <2 x 10;{-43} GeV (68% confidence limit). This is the best constraint to date on electrodynamic parity violation on cosmological scales.

  3. Current Status of Luminosity Measurement with the CMD-3 Detector at the VEPP-2000 e + e − Collider

    CERN Document Server

    Ryzhenenkov, A E; Amirkhanov, A N; Anisenkov, A V; Aulchenko, V M; Banzarov, V Sh; Bashtovoy, N S; Bondar, A E; Bragin, A V; Eidelman, S I; Epifanov, D A; Epshteyn, L B; Erofeev, A L; Fedotovich, G V; Gayazov, S E; Grebenuk, A A; Gribanov, S S; Grigoriev, D N; Ignatov, F V; Ivanov, V L; Karpov, S V; Kazanin, V F; Korobov, A A; Kovalenko, O A; Kozyrev, A N; Kozyrev, E A; Krokovny, P P; Kuzmenko, A E; Kuzmin, A S; Logashenko, I B; Lukin, P A; Mikhailov, K Yu; Okhapkin, V S; Pestov, Yu N; Popov, A S; Razuvaev, G P; Ruban, A A; Ryskulov, N M; Shebalin, V E; Shemyakin, D N; Shwartz, B A; Sibidanov, A L; Solodov, E P; Talyshev, A A; Titov, V M; Vorobiov, A I; Yudin, Yu V

    2017-01-01

    The CMD-3 detector has taken data at the electron-positron collider VEPP-2000 since december 2010. The collected data sample corresponds to an integrated luminosity of 60 pb-6 in the c.m. energy range from 0.32 up to 2 GeV. Preliminary results of the luminosity measurement are presented for various energy ranges and its accuracy is estimated to be 1%.

  4. Measurements of total cross sections between 23 and 280 GeV/c

    International Nuclear Information System (INIS)

    Koehler, P.F.M.

    1975-01-01

    The high precision measurements of the total cross sections for π/sup +-/, K/sup +-/, p, and anti p scattering from H 2 and D 2 were continued with an extension of the energy range from 23 to 280 GeV/c

  5. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

    International Nuclear Information System (INIS)

    Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

    2012-01-01

    Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

  6. Measurement of the Total Cross Section for Hadronic Production by e+e- Annihilation at Energies between 2.6-5 GeV

    International Nuclear Information System (INIS)

    Bai, J. Z.; Ban, Y.; Bian, J. G.; Chen, G. P.; Chen, H. F.; Chen, J.; Chen, J. C.; Chen, Y.; Chen, Y. B.; Chen, Y. Q.

    2000-01-01

    Using the upgraded Beijing Spectrometer, we have measured the total cross section for e + e - annihilation into hadronic final states at center-of-mass energies of 2.6, 3.2, 3.4, 3.55, 4.6, and 5.0 GeV. Values of R , σ(e + e - →hadrons )/σ(e + e - → μ + μ - ) , are determined. (c) 2000 The American Physical Society

  7. Detection prospects for GeV neutrinos from collisionally heated gamma-ray bursts with IceCube/DeepCore.

    Science.gov (United States)

    Bartos, I; Beloborodov, A M; Hurley, K; Márka, S

    2013-06-14

    Jet reheating via nuclear collisions has recently been proposed as the main mechanism for gamma-ray burst (GRB) emission. In addition to producing the observed gamma rays, collisional heating must generate 10-100 GeV neutrinos, implying a close relation between the neutrino and gamma-ray luminosities. We exploit this theoretical relation to make predictions for possible GRB detections by IceCube + DeepCore. To estimate the expected neutrino signal, we use the largest sample of bursts observed by the Burst and Transient Source Experiment in 1991-2000. GRB neutrinos could have been detected if IceCube + DeepCore operated at that time. Detection of 10-100 GeV neutrinos would have significant implications, shedding light on the composition of GRB jets and their Lorentz factors. This could be an important target in designing future upgrades of the IceCube + DeepCore observatory.

  8. Dilepton spectroscopy at intermediate energies; the carbon - carbon reaction at 1 GeV/A

    International Nuclear Information System (INIS)

    Prunet, M.

    1995-01-01

    The Physics context of this work is heavy ion collisions at relativistic energies where di-electron provide informations on the produced hot and dense nuclear matter. The experiment is performed by the DiLepton Spectrometer (DLS) Collaboration at the Lawrence Berkeley's Bevalac. After a description of the apparatus, we review the whole program and the main results so far obtained: first evidence of a significant di-electron signal at energies above 1 GeV/A; improvement of the understanding of di-electron production (electromagnetic decays of hadrons, π + π - annihilation and hadronic Bremsstrahlung). The results of p-p, p-d reactions from 1 to 4.9 GeV/A show that hadronic Bremsstrahlung (pp, pn) should be reformulated. Our analysis, optimized on the reaction Carbon-Carbon at 1 GeV/A, has been applied to α-Ca and d-Ca. We have developed two main aspects: improvement of the time resolution (500 ps) in order to eliminate all of the protons. Improvement of the space resolution (300 μ) for better mass resolution, in particular in the ρ region. We obtain the cross section of di-electron production as a function of mass, transverse momentum and rapidity from the C-C, α-Ca and d-Ca reactions at 1 GeV/A. We also compare the cross section for all of the measured systems at 1 GeV/A, including Ca-Ca, and we show a (ApAt) α dependence with α ≅ 1.1. A study of the associated multiplicity has also been performed. Nevertheless, the limited acceptance of the DLS and its poor mass resolution to identify the ρ, ω vector mesons, do not allow to conclude on hadron behaviour in nuclear matter. This point is one of the main goal of the HADES project at GSI (Darmstadt), which we give a brief description of the main features. (authors). 60 refs

  9. Prototype sector magnets for the GeV electron microtron (GEM)

    International Nuclear Information System (INIS)

    Wehrle, R.B.; Norem, J.H.; Praeg, W.F.; Swanstrom, R.H.; Thompson, K.M.

    1983-01-01

    Three prototypes of the sector magnets for GeV Electon Microtron accelerators have been designed. One has been built and two are being constructed. The first is a full scale, 168 ton prototype for one-half of a 2 GeV Double Sided Microtron (DSM) sector magnet. The successful fabrication and testing of the pole pieces for this prototype has demonstrated that their required close tolerances for flatness and parallelism can be met. The second magnet is an approximate two-thirds scale model of one step at the low energy end of the hexatron sector magnet designed for the 4 GeV Electron Microtron (GEM). The measured fields demonstrate that the field falls off faster than an Enge-short-tail and error fields are at low levels and are controllable. A third prototype magnet exactly duplicates the full scale geometry of the first three full orbits of the GEM sector magnet from entrance to exit points. It will permit high precision measurements and corrections of field errors and verify the 3-D computer program, TOSCA

  10. Single pion and several pions production in {pi}{sup +}p interactions at 1.6 GeV/c; Creation d'un et plusieurs mesons {pi} dans les interactions {pi}{sup +} p a 1,6 GeV/c

    Energy Technology Data Exchange (ETDEWEB)

    Jabiol, M A [Commissariat a l' Energie Atomique, Centre d' Etudes Nucleaires de Saclay, 91 - Gif-sur-Yvette (France)

    1966-07-01

    The production of {rho}{sup +}, N{sub 33}{sup *}, and {eta}{sup 0} was observed in {pi}{sup +}p interactions at 1.6 GeV/c. In the reactions where one pion is created, the comparison between the experimental distribution of the {rho}{sup +} and the N{sub 33}{sup *} with the predictions of the peripheral model modified by absorption effects permits the conclusion that the contribution of this model is important, but that other effects such as interferences between {rho}{sup +} and N{sub 33}{sup *} are not negligible. In the reactions where several pions are created, the branching ratios of some decay modes of {eta}0 are evaluated and the associated production of {eta}{sup 0} and N{sub 33}{sup *} is observed. (author) [French] La production des resonances {rho}{sup +}, N{sub 33}{sup *} et {eta}{sup 0} a ete observee dans les interactions {pi}{sup +}p a 1,6 GeV/c. Dans les reactions ou un seul meson {pi} est cree, la comparaison des distributions experimentales relatives au meson {rho}{sup +} et a l'isobare N{sub 33}{sup *} aux previsions du modele peripherique modifie par les effets d'absorption, permet d'affirmer que la contribution de ce modele est importante, mais que des effets tels que les interferences entre les processus de creation du {rho}{sup +} et de N{sub 33}{sup *} ne sont pas negligeables. Dans les reactions ou plusieurs mesons {pi} sont crees, les rapports de branchement de certains modes de desintegration du meson {eta}{sup 0} ont pu etre evalues et la production associee du {eta}{sup 0} et de N{sub 33}{sup *} a ete observee. (auteur)

  11. Ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) – New representatives of the YIrGe{sub 2} type

    Energy Technology Data Exchange (ETDEWEB)

    Voßwinkel, Daniel; Heletta, Lukas; Hoffmann, Rolf-Dieter; Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de

    2016-11-15

    The YIrGe{sub 2} type ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) were synthesized from the elements by arc-melting and characterized by powder X-ray diffraction. The structure of DyRhGe{sub 2} was refined from single crystal X-ray diffractometer data: Immm, a = 426.49(9), b = 885.0(2), c = 1577.4(3) pm, wR2 = 0.0533, 637 F{sup 2} values, 30 variables (300 K data). The structure contains two crystallographically independent dysprosium atoms in pentagonal prismatic and hexagonal prismatic coordination. The three-dimensional [RhGe{sub 2}] polyanion is stabilized through covalent Rh–Ge (243–261 pm) and Ge–Ge (245–251 pm) bonding. The close structural relationship with the slightly rhodium-poorer germanides RE{sub 5}Rh{sub 4}Ge{sub 10} (≡ RERh{sub 0.8}Ge{sub 2}) is discussed. Temperature-dependent magnetic susceptibility measurements reveal Pauli paramagnetism for YRhGe{sub 2} and Curie-Weiss paramagnetism for RERhGe{sub 2} with RE = Gd, Tb, Dy and Ho. These germanides order antiferromagnetically at T{sub N} = 7.2(5), 10.6(5), 8.1(5), and 6.4(5) K, respectively. - Graphical abstract: The germanides RERhGe{sub 2} (RE = Y, Gd-Ho) are new representatives of the YIrGe{sub 2} type.

  12. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

    2015-09-01

    In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

  13. Tailoring the spin polarization in Ge/SiGe multiple quantum wells

    International Nuclear Information System (INIS)

    Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario; Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni; Trivedi, Dhara; Song, Yang; Li, Pengki; Dery, Hanan

    2013-01-01

    We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization

  14. Effect of HF concentration on the composition and distribution of Ge species in the framework of ITQ-13 and ITQ-17 zeolites

    KAUST Repository

    Liu, Xiaolong

    2013-04-01

    Two germanosilicates with zeolitic structures, namely ITQ-13 and ITQ-17, have been synthesized from gels containing various amounts of hydrofluoric acid. Although both zeolites possess similar compositions, they differ not only by their pore size and framework topology but also by the nature of the cavities surrounding fluoride species in the structure. For ITQ-17, in which fluoride is almost exclusively located in D4R units, a decrease in HF concentration in the gel has no influence on the fluoride content in the zeolite. However, it favors the incorporation of germanium species in the framework, particularly in D4R units. Zeolites obtained at low HF concentrations are characterized by high Ge contents and Si/Ge atomic ratios close to 1 in D4R units. In the case of ITQ-13, the possibility for fluoride to reside not only in D4R units but also in the larger [415262] cages minimizes the influence of the HF concentration on the zeolite framework composition. Reducing the HF concentration in the gel has no effect on the Si/Ge ratio in the final zeolite but it decreases the fluoride content in the structure. At low HF concentration, fluoride is absent from [415262] cages and is almost exclusively present in all-silica D4R units. As the concentration increases, fluoride starts to occupy Ge-rich D4R and [415 262] cages, as clearly evidenced by 19F NMR. By contrast to ITQ-17, the amount of HF in the gel does not influence the distribution of Ge species in the framework. © 2012 Published by Elsevier Inc.

  15. Progress report 2000 / 2001; Rapport d'activite 2000 / 2001

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-07-01

    The 2000-2001 period has seen many facts of importance for the EURATOM-Cea association. The first outstanding fact is the positive evolution of the ITER project because of both the willingness of the partners and the French proposition to the European Union to consider the Cadarache site as the European site. The second outstanding fact is both the installation on Tore-Supra of a new generation of plasma-facing component: the Ciel project and the launch of the Cimes project whose aim is to allow Tore-Supra to reach discharge up to 1000 s. The third outstanding fact is the continuation of experiments in Jet after 1999, end date of the Jet Joint Undertaking. These new provisions aim at maintaining in activity the spearhead of the European program, waiting for a clarification of the ITER situation. Among the results obtained in Jet operations, we can quote those having a direct influence on the ITER performances: - the beneficial effect of a high triangularity on the ELM (edge localized modes) and on the confinement factor at high density, - the real time control of advanced tokamak discharges at quasi steady state, and the theoretical explanation of the current hole (in lower hybrid advanced scenarios, a region with vanishing current density that appears in the plasma centre). (A.C.)

  16. Theoretical scenarios for 103 GeV to 1019 GeV

    International Nuclear Information System (INIS)

    Kaul, R.K.

    1996-01-01

    Basic dogmas of particle physics are reviewed. Some of their implications beyond the standard model are explored. Higgs sector of the standard model of electroweak interactions is the weakest link in the model. Elementary Higgs field makes the model unnatural beyond about 10 3 GeV. Supersymmetry provides the most attractive framework where in this problem can be addressed. This new symmetry, relating fermions and bosons, is expected to be operative at about 10 3 GeV. In addition, grand unification of the fundamental interactions can be studied consistently only within a supersymmetric formulation. Inclusion of gravity with other interactions leads to supergravity theories, which should emerge as a low energy description of a more fundamental theory, the string-theory. Supersymmetry again is an essential feature of such a theory. Quantum gravity, with its characteristic scale of 10 19 GeV, may well be described by a superstring theory. (author). 28 refs., 1 fig

  17. Pressure effects in the giant magnetocaloric compounds Gd5(SixGe1-x)4

    International Nuclear Information System (INIS)

    Morellon, L; Arnold, Z; Algarabel, P A; Magen, C; Ibarra, M R; Skorokhod, Y

    2004-01-01

    We report a study of the effect of hydrostatic pressure up to 9 kbar on selected compounds of the Gd 5 (Si x Ge 1-x ) 4 series (x = 0.8, 0.45, 0.1) by means of ac magnetic susceptibility, compressibility, and linear thermal expansion measurements. The pressure-induced increase of the transition temperatures at the second-order boundaries of the phase diagram is rather moderate: dT C /dP ∼ +0.3Kk-bar -1 (x = 0.8) and dT N /P ∼+0.7Kkbar -1 (x = 0.1). This effect is stronger in the 0 C /dP ∼ +3 Kk-bar -1 (x = 0.45,0.1), indicating that the ferromagnetic ordering can be simultaneously driven through a pressure-induced structural transformation. The values of d lnT C /d lnV calculated with the use of the measured value of compressibility (k ∼1.8 M-bar -1 ) are significantly lower than those estimated from the concentration dependence of the lattice cell volume, thus demonstrating that the dependence of the transition temperatures upon changing the Si/Ge ratio across the series cannot be explained by a pure volume effect

  18. Production of H,D(2s, 2p) by electron impact (0 - 2000 eV) on simple hydrogen containing molecules, ch. 2, A2

    International Nuclear Information System (INIS)

    Moehlman, G.R.; Heer, F.J. de

    1977-01-01

    Absolute emission cross sections of Ly-α (H,D(2p → 1s)) radiation have been determined for 0 - 2000 eV electrons incident on H 2 , HD, HCl, H 2 O, NH 3 and CH 4 . By means of the application of electric quenching, the excitation cross sections of H,D(2s) could be obtained from the increase of the resulting Ly-α radiation for these molecules. Only in the case of electrons on H 2 , D 2 and HD was excitation of H,D(2s) found

  19. Annual report of Kansai Research Establishment 2000. April 1, 2000 - March 31, 2001

    Energy Technology Data Exchange (ETDEWEB)

    Harami, Taikan; Hamaya, Nozomu; Mizuki, Jun-ichiro [Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan). Kansai Research Establishment; and others

    2002-02-01

    This report is the second issue of the annual report of Kansai Research Establishment, Japan Atomic Energy Research Institute. It covers status reports of R and D and results of experiments conducted at the Advanced Photon Research Center and the Synchrotron Radiation Research Center during the period from April 1, 2000 to March 31, 2001. (author)

  20. Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2016-03-01

    Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

  1. Self organized formation of Ge nanocrystals in multilayers

    OpenAIRE

    Zschintzsch-Dias, Manuel

    2012-01-01

    The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated...

  2. Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

    International Nuclear Information System (INIS)

    Facetti, J.F.; Vallejos, A.

    1971-01-01

    Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions

  3. Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

    Energy Technology Data Exchange (ETDEWEB)

    Facetti, J F; Vallejos, A [Asuncion Naciona Univ. (Paraguay). Inst. de Ciencias

    1971-01-01

    Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions.

  4. High spin states in 66,68Ge

    International Nuclear Information System (INIS)

    Hermkens, U.; Becker, F.; Eberth, J.; Freund, S.; Mylaeus, T.; Skoda, S.; Teichert, W.; Werth, A. v.d.

    1992-01-01

    High spin states of 66,68 Ge have been investigated at the FN Tandem accelerator of the University of Koeln via the reactions 40 Ca( 32 S,α2p,4p) 66,68 Ge at a beam energy of 100 MeV and 58 Ni( 16 O,α2p) 68