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Sample records for ge semiconductor detectors

  1. Fabrication of prototypes of Ge(li) semiconductor detector

    International Nuclear Information System (INIS)

    Santos, W.M.S.; Marti, G.V.; Rizzo, P.; Barros, S. de.

    1987-01-01

    The fabrication process of Ge(Li) semiconductor detector prototypes, from specific chemical treatments of doped monocrystal with receptor impurities (p + semicondutor) is presented. The detector characteristics, such as resulotion and operation tension are shown. (M.C.K.) [pt

  2. Response function of semiconductor detectors, Ge and Si(Li)

    International Nuclear Information System (INIS)

    Zevallos Chavez, Juan Yury

    2003-01-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm 3 , 50 cm 3 , 8 cm 3 and 5 cm 3 , and one Si(Li) with 0.143 cm 3 of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  3. Response function of semiconductor detectors, Ge and Si(Li); Funcao resposta de detectores semicondutores, Ge e Si(Li)

    Energy Technology Data Exchange (ETDEWEB)

    Zevallos Chavez, Juan Yury

    2003-07-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm{sup 3} , 50 cm{sup 3} , 8 cm{sup 3} and 5 cm{sup 3}, and one Si(Li) with 0.143 cm{sup 3} of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  4. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  5. HP Ge planar detectors

    International Nuclear Information System (INIS)

    Gornov, M.G.; Gurov, Yu.B.; Soldatov, A.M.; Osipenko, B.P.; Yurkowski, J.; Podkopaev, O.I.

    1989-01-01

    Parameters of planar detectors manufactured of HP Ge are presented. The possibilities to use multilayer spectrometers on the base of such semiconductor detectors for nuclear physics experiments are discussed. It is shown that the obtained detectors including high square ones have spectrometrical characteristics close to limiting possible values. 9 refs.; 3 figs.; 1 tab

  6. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  7. Investigation about semiconductor gamma ray detector - Evaluation of Ge(Li) detectors life expectation

    International Nuclear Information System (INIS)

    1980-06-01

    A list of germanium lithium gamma ray detectors has been drawn up by a working group after investigations in various laboratories. Authors analyse the historical account of each detector and try to give an answer about some questions as: - detectors life expectation, - deficiencies and death reasons, - influence of detector type and volume. Differents parameters are also collected by the working group for future works (standard geometry, low level measurements, etc.). In the list, the characteristics of 228 detectors, collected between january 1965 and december 1977 are put together. The principal conclusions of the authors are: - with a probability of 95%, half of the detectors is dead before 6.1 years, - the average age of dead population (33% of detectors) is 3.9 years, - resolution and efficiency evolution are good indicators of possible deficiency, - the fiability of vertical cryostat is better than the other systems [fr

  8. Calibration of Ge(Li) semiconductor detector by method using agar volume source

    International Nuclear Information System (INIS)

    Yanase, Nobuyuki; Kasai, Atsushi

    1979-12-01

    The Ge(Li) semiconductor detector was calibrated for measurements of environmental samples. The radioisotopes used for standard sources are 22 Na, 51 Cr, 56 Co, 57 Co, 133 Ba, 137 Cs, 144 Ce and 241 Am. These are mixed with hot agar aqueous solution and fixed uniformly in a cylindrical plastic case in cooling. The agar volume source is advantageous in handling over the fluid aqueous source. The prepared cylindrical standard sources are in diameters 6 and 8 cm and thicknesses 1, 5, 10, 20, 30 and 40 mm (only for 8 cm diameter). The radioactivities of prepared standard sources are between 0.03 μCi and 0.2 μCi. It takes only a week to make the calibration except data processing. The obtained full energy peak efficiency curves include 5 - 10% error due to preparation of agar source, reference radioactivity data of purchased standard solutions, reference data of branching ratio of gamma-ray and sum effect. The efficiency curves, however, are sufficient for quantitative analysis of environmental samples. (author)

  9. Study of 50 GeV proton ionization loss by semiconductor detector with smoothly tunable thickness

    Energy Technology Data Exchange (ETDEWEB)

    Nazhmudinov, R.M.; Kubankin, A.S. [Belgorod National Research University, Belgorod (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Shchagin, A.V., E-mail: shchagin@kipt.kharkov.ua [Belgorod National Research University, Belgorod (Russian Federation); Kharkov Institute of Physics and Technology, Kharkov (Ukraine); Shul' ga, N.F.; Trofymenko, S.V. [Kharkov Institute of Physics and Technology, Kharkov (Ukraine); Kharkov National University, Kharkov (Ukraine); Britvich, G.I.; Durum, A.A.; Kostin, M. Yu.; Maisheev, V.A.; Chesnokov, Yu.A.; Yanovich, A.A. [Institute for High Energy Physics in National Research Centre Kurchatov Institute, Protvino (Russian Federation)

    2017-01-15

    The possibility of the measurement of proton ionization loss in the Silicon (Si) layer of smoothly tunable thickness was demonstrated in an experiment with a 50-GeV proton beam. The Si surface-barrier detector with the depleted layer thickness controlled by the value of high-voltage power supply was used in the experiment. The measured spectra of ionization loss are discussed and compared with the calculated spectra. The possibilities of research of the evolution of electromagnetic field of ultrarelativistic particles traversing the media interface and the study of dynamics of particles moving in the channeling regime or the volume reflection regime with the use of detectors with smoothly tunable thickness are indicated.

  10. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  11. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  12. A Gamma Scanner Using a Ge(Li) Semi-Conductor Detector, with the Possibility of Operation in the Anti-Coincidence Mode

    Energy Technology Data Exchange (ETDEWEB)

    Forsyth, R S; Blackadder, W H

    1970-04-15

    A fuel element transport flask has been modified as a facility for gamma scanning irradiated fuel elements up to a length of 75 cm. By means of a Ge(Li) semi-conductor detector, satisfactory activity profiles along the specimens have been obtained, permitting the location of individual fuel pellets. An annular plastic detector surrounding the Ge(Li) detector allows operation of the spectrometer in the anti-coincidence mode, and reduction of the Compton continuum by about 50% has been obtained.

  13. A Gamma Scanner Using a Ge(Li) Semi-Conductor Detector, with the Possibility of Operation in the Anti-Coincidence Mode

    International Nuclear Information System (INIS)

    Forsyth, R.S.; Blackadder, W.H.

    1970-04-01

    A fuel element transport flask has been modified as a facility for gamma scanning irradiated fuel elements up to a length of 75 cm. By means of a Ge(Li) semi-conductor detector, satisfactory activity profiles along the specimens have been obtained, permitting the location of individual fuel pellets. An annular plastic detector surrounding the Ge(Li) detector allows operation of the spectrometer in the anti-coincidence mode, and reduction of the Compton continuum by about 50% has been obtained

  14. Semiconductors detectors: basics principals, fabrication and repair

    International Nuclear Information System (INIS)

    Souza Coelho, L.F. de.

    1982-05-01

    The fabrication and repairing techniques of semiconductor detectors, are described. These methods are shown in the way they are applied by the semiconductor detector laboratory of the KFA-Julich, where they have been developed during the last 15 years. The history of the semiconductor detectors is presented here, being also described the detector fabrication experiences inside Brazil. The key problems of manufacturing are raised. In order to understand the fabrication and repairing techniques the working principles of these detectors, are described. The cases in which worked during the stay in the KFA-Julich, particularly the fabrication of a plane Ge (Li) detector, with side entry, and the repair of a coaxial Ge (Li) is described. The vanguard problems being researched in Julich are also described. Finally it is discussed a timetable for the semiconductor detector laboratory of the UFRJ, which laboratory is in the mounting stage now. (Author) [pt

  15. Ge-semiconductor detectors with a p-implanted n+-contact

    International Nuclear Information System (INIS)

    Protic, D.; Riepe, G.

    1979-01-01

    P-implanted large-surface-detectors with improved properties can be produced by implantation of the n + -contact with relatively low dose and high energy. After an annealing process a nearly perfect lattice structure is obtained. By a subsequent p-implantation step with high dose and low energy, the surface restisivity can be reduced. The p + -contacts are obtained by B-implantation. (DG) [de

  16. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  17. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  18. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  19. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  20. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  1. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  2. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  3. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  4. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  5. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  6. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  7. Multi electrode semiconductors detectors

    CERN Document Server

    Amendolia, S R; Bertolucci, Ennio; Bosisio, L; Bradaschia, C; Budinich, M; Fidecaro, F; Foà, L; Focardi, E; Giazotto, A; Giorgi, M A; Marrocchesi, P S; Menzione, A; Ristori, L; Rolandi, Luigi; Scribano, A; Stefanini, A; Vincelli, M L

    1981-01-01

    Detectors with very high space resolution have been built in this laboratory and tested at CERN in order to investigate their possible use in high energy physics experiments. These detectors consist of thin layers of silicon crystals acting as ionization chambers. Thin electrodes, structured in strips or in more fancy shapes are applied to their surfaces by metal coating. The space resolution which could be reached is of the order of a few microns. An interesting feature of these solid state detectors is that they can work under very high or low external pressure or at very low temperature. The use of these detectors would strongly reduce the dimensions and the cost of high energy experiments. (3 refs).

  8. Multi electrode semiconductor detectors

    International Nuclear Information System (INIS)

    Amendolia, S.R.; Batignani, G.; Bertolucci, E.; Bosisio, L.; Budinich, M.; Bradaschia, C.; Fidecaro, F.; Foa, L.; Focardi, E.; Giazotto, A.; Giorgi, M.A.; Marrocchesi, P.S.; Menzione, A.; Ristori, L.; Rolandi, L.; Scribano, A.; Stefanini, A.; Vincelli, M.L.

    1981-01-01

    Detectors with very high space resolution have been built in the laboratory and tested at CERN in order to investigate their possible use in high energy physics experiments. These detectors consist of thin layers of silicon crystals acting as ionization chambers. Thin electrodes, structured in strips or in more fancy shapes are applied to their surfaces by metal coating. The space resolution which could be reached is of the order of a few microns. An interesting feature of these solid state detectors is that they can work under very high or low external pressure or at very low temperature. The use of these detectors would strongly reduce the dimensions and the cost of high energy experiments. (Auth.)

  9. Semiconductor Thermal Neutron Detector

    Directory of Open Access Journals (Sweden)

    Toru Aoki

    2014-02-01

    Full Text Available The  CdTe  and  GaN  detector  with  a  Gd  converter  have  been developed  and  investigated  as  a  neutron  detector  for neutron  imaging.  The  fabricated  Gd/CdTe  detector  with  the  25  mm  thick  Gd  was  designed  on  the  basis  of  simulation results  of  thermal  neutron  detection  efficiency  and  spatial  resolution.  The  Gd/CdTe  detector  shows  the  detection  of neutron  capture  gamma  ray  emission  in  the  155Gd(n,  g156Gd,  157Gd(n,  g158Gd  and  113Cd(n,  g114Cd  reactions  and characteristic X-ray emissions due to conversion-electrons generated inside the Gd film. The observed efficient thermal neutron detection with the Gd/CdTe detector shows its promise in neutron radiography application. Moreover, a BGaN detector has also investigated to separate neutron signal from gamma-ray clearly. 

  10. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  11. The semi-conductor detectors: art state, new concepts

    International Nuclear Information System (INIS)

    Pochet, T.

    1993-01-01

    After a brief recall of signal formation principle in a detector and of its different operation modes, the high Z materials as CdTe, HgI 2 , GaAs ,Ge and Si are presented, followed by the new 'thin layer' semiconductors

  12. Hybrid anode for semiconductor radiation detectors

    Science.gov (United States)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  13. Investigation of the operational quality of germanium gamma detectors. Estimation of Ge:Li detector survival rates

    International Nuclear Information System (INIS)

    Zerbib, J.-C.

    1980-01-01

    A working group has produced tables of information on gamma semiconductor Ge detectors: Ge(Li) or intrinsic Ge. The information was obtained as a result of enquirres addressed to various laboratories, and concerns 228-sources in France and Belgium [fr

  14. Miniature semiconductor detectors for in vivo dosimetry

    International Nuclear Information System (INIS)

    Rosenfeld, A. B.; Cutajar, D.; Lerch, M. L. F.; Takacs, G.; Cornelius, I. M.; Yudelev, M.; Zaider, M.

    2006-01-01

    Silicon mini-semiconductor detectors are found in wide applications for in vivo personal dosimetry and dosimetry and Micro-dosimetry of different radiation oncology modalities. These applications are based on integral and spectroscopy modes of metal oxide semiconductor field effect transistor and silicon p-n junction detectors. The advantages and limitations of each are discussed. (authors)

  15. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

    Science.gov (United States)

    2012-09-01

    its effect on the optical beam. Computer Tunable optical source Detectors Test MSM detector Lock-in- amplifier Multiplexer Transimpedance ... amplifier Three-way beam splitter L3 sample L1 Light source L4 L2 Reference Detector Reflectance Detector

  16. Semiconductor high-energy radiation scintillation detector

    International Nuclear Information System (INIS)

    Kastalsky, A.; Luryi, S.; Spivak, B.

    2006-01-01

    We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

  17. Semiconductor detectors with proximity signal readout

    International Nuclear Information System (INIS)

    Asztalos, Stephen J.

    2012-01-01

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need

  18. Metal-semiconductor, composite radiation detectors

    International Nuclear Information System (INIS)

    Orvis, W.J.; Yee, J.H.; Fuess, D.A.

    1991-12-01

    In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

  19. Fabrication and utilization of semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Lemos Junior, Orlando Ferreira

    1969-01-01

    This paper describes the assembly of the equipment for the fabrication of Ge-Li drifted detectors and the technique used in the preparation of a Planar detector of 7 cm 2 x 0,5 cm for the Laboratory of the Linear Accelerator at the University of Sao Paulo, as well as the utilization of a 22 cm 3 coaxial detector for the analysis of fission product gamma rays at the Instituto de Engenharia Nuclear, Rio de Janeiro, R J, Brazil. (author)

  20. Metal-semiconductor, composite radiation detectors

    International Nuclear Information System (INIS)

    Orvis, W.J.; Yee, J.H.; Fuess, D.

    1992-12-01

    In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

  1. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  2. Basic processes and scintillator and semiconductor detectors

    International Nuclear Information System (INIS)

    Bourgeois, C.

    1994-01-01

    In the following course, the interaction of heavy charged particles, electrons and Γ with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs

  3. Microelectronics used for Semiconductor Imaging Detectors

    CERN Document Server

    Heijne, Erik H M

    2010-01-01

    Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

  4. Semiconductor detectors in the low countries

    International Nuclear Information System (INIS)

    Heijne, Erik H.M.

    2003-01-01

    Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double-sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime ∼10 -12 s, which decay on sub-millimeter scale. The intensive activity in silicon detector R and D culminated in 1991 in the construction of fine-grained 2D monolithic and hybrid pixel detectors that incorporate sophisticated electronic functions in each microscopic detection element, with typical dimensions of 25-100 μm. Besides being a powerful high intensity tracker for particle physics, this device can also be designed as a new X-ray imager, which allows selective counting of individual photons in each pixel at MHz frequency

  5. Solid state semiconductor detectorized survey meter

    International Nuclear Information System (INIS)

    Okamoto, Eisuke; Nagase, Yoshiyuki; Furuhashi, Masato

    1987-01-01

    Survey meters are used for measurement of gamma ray dose rate of the space and the surface contamination dencity that the atomic energy plant and the radiation facility etc. We have recently developed semiconductor type survey meter (Commercial name: Compact Survey Meter). This survey meter is a small-sized dose rate meter with excellent function. The special features are using semiconductor type detector which we have developed by our own technique, stablar wide range than the old type, long life, and easy to carry. Now we introduce the efficiency and the function of the survey meter. (author)

  6. Semiconductor detectors in the low countries

    CERN Document Server

    Heijne, Erik H M

    2003-01-01

    Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double- sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime similar to 10**- **1**2s, which decay on sub-millimeter scale. The intensive activity in silicon detector R&D c...

  7. The use of GaSe semiconductor detectors for monitoring high energy muon beams

    CERN Document Server

    Mancini, A M; Murri, R; Quirini, A; Rizzo, A; Vasanelli, L

    1976-01-01

    GaSe semiconductor detectors have been successfully tested during one year for monitoring muon beams in the GeV range in the neutrino experiment at CERN. Their performances are comparable with those of commercial Si surface barrier detectors for this particular application. Crystal growth, detector fabrication and characterization are briefly described. Various advantages (cost, ruggedness, resistance to radiation damage, manufacturing simplicity, etc.) are discussed. (8 refs).

  8. The physics and technology of Si and Ge detectors

    International Nuclear Information System (INIS)

    Stab, Lucien

    Semiconductor physics fundamentals are recalled (energy levels in crystalline solids, level population, charge carrier transport) as an introduction to studying NP junction at thermal equilibrium, or reversly biased. The fabrication of semiconductor detectors including surface barrier detectors, implanted junctions, and lithium-drifted semiconductors is discussed [fr

  9. Superconducting detectors for semiconductor quantum photonics

    International Nuclear Information System (INIS)

    Reithmaier, Guenther M.

    2015-01-01

    In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

  10. Pulse shape discrimination studies of Phase I Ge-detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kirsch, Andrea [MPI fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg (Germany); Collaboration: GERDA-Collaboration

    2013-07-01

    The GERmanium Detector Array experiment aims to search for the neutrinoless double beta decay (0νββ) of {sup 76}Ge by using isotopically enriched germanium crystals as source and detector simultaneously. The bare semiconductor diodes are operated in liquid argon at cryogenic temperatures in an ultra-low background environment. In addition, Gerda applies different active background reduction techniques, one of which is pulse shape discrimination studies of the current Phase I germanium detectors. The analysis of the signal time structure provides an important tool to distinguish single site events (SSE) of the ββ-decay from multi site events (MSE) of common gamma-ray background or surface events. To investigate the correlation between the signal shape and the interaction position, a new, also to the predominantly deployed closed-ended coaxial HPGe detectors applicable analysis technique has been developed. A summary of the used electronic/detector assembly is given and followed by a discussion of the performed classification procedure by means of accurate pulse shape simulations of 0νββ-like signals. Finally, the obtained results are presented along with an evaluation of the relevance for the Gerda experiment.

  11. Application of energy dispersive X-ray spectrometers with semiconductor detectors in radiometric analyses

    International Nuclear Information System (INIS)

    Jugelt, P.; Schieckel, M.

    1983-01-01

    Problems and possibilities of applying semiconductor detector spectrometers in radiometric analyses are described. A summary of the state of the art and tendencies of device engineering and spectra evaluation is given. Liquid-nitrogen cooled Li-drifted Si-detectors and high-purity Ge-detectors are compared. Semiconductor detectors working at room temperature are under development. In this connection CdTe and HgI 2 semiconductor detectors are compared. The use of small efficient computers in the spectrometer systems stimulates the development of algorithms for spectra analyses and for determining the concentration. Fields of application of energy dispersive X-ray spectrometers are X-ray diffraction and X-ray macroanalysis in investigating the structure of extensive surface regions

  12. Peltier battery thermostat for semiconductor detectors

    International Nuclear Information System (INIS)

    Caini, V.

    1980-01-01

    The description is given of a Peltier battery cooling thermostat for semiconductor detectors, whose sensing element is the detector itself. A signal proportional to the leakage current is amplified and compared with a chosen reference voltage. The difference, amplified and sensed, regulates the cooling current to the Peltier battery. Special mechanical devices speed up measurement-taking. The leakage current proved to be reducible to as little as 1/1000 of that at ambient temperature and the stabilization obtained is between +-5 nA (although between +-1 nA is also feasible). Hence it is possible to use very high load resistance preamplifiers to reduce noise and to improve stability and pulse height resolution in α spectroscopy, even with a detector unsuitable for work at very low temperatures. Other applications can be foreseen. (orig.)

  13. MCNPX calculations for electron irradiated semiconductor detectors

    International Nuclear Information System (INIS)

    Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

    2014-01-01

    This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

  14. Measurement of energy transitions for the decay radiations of 75Ge and 69Ge in a high purity germanium detector

    Science.gov (United States)

    Aydın, Güral; Usta, Metin; Oktay, Adem

    2018-06-01

    Photoactivation experiments have a wide range of application areas in nuclear, particle physics, and medical physics such as measuring energy levels and half-lifes of nuclei, experiments for understanding imaging methods in medicine, isotope production for patient treatment, radiation security and transportation, radiation therapy, and astrophysics processes. In this study, some energy transition values of the decay radiations of 75Ge and 69Ge, which are the products of photonuclear reactions (γ, n) with germanium isotopes (75Ge and 69Ge), were measured. The gamma spectrum as a result of atomic transitions were analysed by using a high purity semiconductor germanium detector and the energy transition values which are presented here were compared with the ones which are the best in literature. It was observed that the results presented are in agreement with literature in error range and some results have better precisions.

  15. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-05-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  16. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-03-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  17. Semiconductor scintillator detector for gamma radiation

    International Nuclear Information System (INIS)

    Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S.

    2015-01-01

    Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

  18. Pulse shape discrimination performance of inverted coaxial Ge detectors

    Science.gov (United States)

    Domula, A.; Hult, M.; Kermaïdic, Y.; Marissens, G.; Schwingenheuer, B.; Wester, T.; Zuber, K.

    2018-05-01

    We report on the characterization of two inverted coaxial Ge detectors in the context of being employed in future 76Ge neutrinoless double beta (0 νββ) decay experiments. It is an advantage that such detectors can be produced with bigger Ge mass as compared to the planar Broad Energy Ge (BEGe) or p-type Point Contact (PPC) detectors that are currently used in the GERDA and MAJORANA DEMONSTRATOR 0 νββ decay experiments respectively. This will result in a lower background for the search of 0 νββ decay due to a reduction of detector surface to volume ratio, cables, electronics and holders which are dominating nearby radioactive sources. The measured resolution near the 76Ge Q-value at 2039 keV is 2.3 keV FWHM and their pulse-shape discrimination of background events are similar to BEGe and PPC detectors. It is concluded that this type of Ge-detector is suitable for usage in 76Ge 0 νββ decay experiments.

  19. The role of contacts in semiconductor gamma radiation detectors

    International Nuclear Information System (INIS)

    Lachish, U.

    1998-01-01

    It is proposed that the operation of semiconductor gamma radiation detectors, equipped with ohmic contacts, which allow free electron flow between the contacts and bulk material, will not be sensitive to low hole mobility, hole collection efficiency, or hole trapping. Such fast-operating detectors may be readily integrated into monolithic arrays. The detection mechanism and various material aspects are discussed and compared to those of blocking contact detectors. Some suggestions for detector realization are presented. (orig.)

  20. Front-end electronics for multichannel semiconductor detector systems

    CERN Document Server

    Grybos, P

    2010-01-01

    Front-end electronics for multichannel semiconductor detektor systems Volume 08, EuCARD Editorial Series on Accelerator Science and Technology The monograph is devoted to many different aspects related to front-end electronics for semiconductor detector systems, namely: − designing and testing silicon position sensitive detectors for HEP experiments and X-ray imaging applications, − designing and testing of multichannel readout electronics for semiconductor detectors used in X-ray imaging applications, especially for noise minimization, fast signal processing, crosstalk reduction and good matching performance, − optimization of semiconductor detection systems in respect to the effects of radiation damage. The monograph is the result mainly of the author's experience in the above-mentioned areas and it is an attempt of a comprehensive presentation of issues related to the position sensitive detection system working in a single photon counting mode and intended to X-ray imaging applications. The structure...

  1. Trapping effect on the resolution of Ge(Li) detectors

    International Nuclear Information System (INIS)

    Venturini, L.; Suarez, A.A.

    1980-01-01

    This work describes the measurement of the resolution variation of a Ge(Li) detector as a function of irradiation position by a collimated gamma-ray beam. Also the resolution dependence has been measured as a function of the detector applied voltage, using collimated and non-collimated gamma-ray beam. (A.C.A.S.) [pt

  2. Measurement of ionising radiation semiconductor detectors: a review

    International Nuclear Information System (INIS)

    Aussel, J.P.

    1986-06-01

    Manufacturing techniques for nuclear detectors using semiconductors are constantly advancing, and a large range of models with different specificities and characteristics are available. After a theoretical reminder, this report describes the main types of detectors, their working and their preferential use. A comparative table guides the neophyte reader in his choice [fr

  3. Semiconductor neutron detectors based on new types of materials

    International Nuclear Information System (INIS)

    Pochet, T.; Foulon, F.

    1993-01-01

    Neutron detection in hostile environments such as nuclear reactors has been performed using a new kind of semiconductor detector. So far, crystalline semiconductor detectors are not used in nuclear reactor instrumentation because of their sensitivity to radiation damage. For doses in excess of a few tens of kilo rads, radiation induced lattice defects produce a strong loss in the standard semiconductor detector performances. In the last few years, new semiconductor materials having amorphous or polycrystalline structures such as silicon, silicon carbide or CVD diamond, became available. These semiconductors, produced by Chemical Vapor Deposition, come in the form of thin layers being typically a few tens of micron thick. Their crystalline structure is particularly resistant to radiation damage up to a few Mrads but prevent the material use in spectrometry measurements. Nevertheless, these detectors, working in a counting mode, are suitable for the detection of alpha particles produced by the neutron capture reaction with boron. Such thin film detectors have a very poor sensitivity to γ-ray background. Furthermore, they are easier and cheaper to implement than current neutron gas counters. Preliminary results obtained with diamond and amorphous silicon diodes exposed to α particles are presented. (authors). 7 figs., 3 tabs., 11 refs

  4. Background components of Ge(Li) and GeHP-detectors in the passive shield

    International Nuclear Information System (INIS)

    Buraeva, E.A.; Davydov, M.G.; Zorina, L.V.; Stasov, V.V.

    2007-01-01

    The gamma-spectrometer Ge(Li)- and the extra pure Ge-detector background components in a specially designed passive shield were subjected to investigation in the land-based laboratory in 1996-2006. The measurement time period varied from 45 up to 240 hours. The detector background is caused by the radionuclides in the shield material, in the shield cells and in the detector materials. The prominence was given to the study of the revealed time dependence of 222 Rn daughter product background including '2 10 Pb 46.5 keV peak [ru

  5. Low frequency noise in semiconductor detectors

    International Nuclear Information System (INIS)

    Stojanovic, M.; Marjanovic, N.

    1998-01-01

    Noise characteristics of surface-barrier detectors based on Au contacts on n-Si were measured and analyzed. The metal layers were deposited by evaporation to 40-100 nm thickness. Standard surface-barrier detectors based on Au/Si structures are known to have favorable characteristics, but they tend to degrade with aging and under severe working conditions. Degradation is particularly related to the increase in noise level, leakage current and the reduction of detector efficiency and resolution. Therefore, practical applications of surface-barrier detectors demand their constant upgrading. Improvements of detector properties are concentrated mainly on the front surface and front (rectifying) contact. The aim was to improve the noise characteristics of the surface-barrier structures and retain the favorable detector properties of the Au/Si system. (authors)

  6. Electron injection in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Castoldi, A.; Vacchi, A.

    1990-01-01

    The paper reports the first successful results of a simple MOS structure to inject electrons at a given position in Silicon Drift Detectors. The structure allows on-line calibration of the drift velocity of electrons within the detector. The calibration is a practical method to trace the temperature dependence of the electron mobility. Several of these injection structures can be implemented in silicon drift detectors without additional steps in the fabrication process. 5 refs., 11 figs

  7. Monte-Carlo modelling of Ge detectors - frequently overlooked issues

    International Nuclear Information System (INIS)

    Johnston, P.; Tagziria, H.; Gasparro, J.; Hult, M.

    2006-01-01

    This work concentrates on issues that are commonly encountered, but difficult to define including detectors tilted with respect to the cylindrical axis and otherwise misaligned, deviations of the sensitive volume from a right-cylinder, e.g. a rounded edge of co-axial Ge detectors and errors in the available data about the relevant decay scheme. The paper concentrates on methods used to overcome these difficulties

  8. Ge Detector Data Classification with Neural Networks

    Science.gov (United States)

    Wilson, Carly; Martin, Ryan; Majorana Collaboration

    2014-09-01

    The Majorana Demonstrator experiment is searching for neutrinoless double beta-decay using p-type point contact PPC germanium detectors at the Sanford Underground Research Facility, in South Dakota. Pulse shape discrimination can be used in PPC detectors to distinguish signal-like events from backgrounds. This research program explored the possibility of building a self-organizing map that takes data collected from germanium detectors and classifies the events as either signal or background. Self organizing maps are a type of neural network that are self-learning and less susceptible to being biased from imperfect training data. We acknowledge support from the Office of Nuclear Physics in the DOE Office of Science, the Particle and Nuclear Astrophysics Program of the National Science Foundation and the Russian Foundation for Basic Research.

  9. Application of imitation for energy calibration of silicon semiconductor detectors

    CERN Document Server

    Aivazyan, G M; Mikaelyan, M A

    2003-01-01

    An effective method is described for energy calibration of semiconductor detectors (SCD) with different thickness. The method is based on imitating the charge on the input of the preamplifier deposited in SCD by known energy ionizing particles, the imitation being performed by a pulser with a partial with use of alpha-active sources. The results of laboratory studies of the described method are given with detectors of either large, 50-1000 mu m, or small, 18-20 mu m, thickness

  10. Fast-timing methods for semiconductor detectors

    International Nuclear Information System (INIS)

    Spieler, H.

    1982-03-01

    The basic parameters are discussed which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

  11. Status and problems of semiconductor detectors

    International Nuclear Information System (INIS)

    Walton, J.T.; Goulding, F.S.; Haller, E.E.; Pehl, R.H.

    1981-03-01

    A brief review is given of the types of silicon and germanium detectors used or presently being developed for nuclear experiments. Large-area silicon and germanium detector telescopes for use in long-range particle detection and identification are emphasized. Large area position-sensitive detectors are also described. Some results are presented regarding radiation damage and damage repair by annealing. Evidence is also presented for the importance of producing large area silicon crystals of adequate quality to reduce trapping problems to negligible proportions

  12. Fast timing methods for semiconductor detectors. Revision

    International Nuclear Information System (INIS)

    Spieler, H.

    1984-10-01

    This tutorial paper discusses the basic parameters which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

  13. Status and problems of semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Walton, J.T.; Goulding, F.S.; Haller, E.E.; Pehl, R.H.

    1981-03-01

    A brief review is given of the types of silicon and germanium detectors used or presently being developed for nuclear experiments. Large-area silicon and germanium detector telescopes for use in long-range particle detection and identification are emphasized. Large area position-sensitive detectors are also described. Some results are presented regarding radiation damage and damage repair by annealing. Evidence is also presented for the importance of producing large area silicon crystals of adequate quality to reduce trapping problems to negligible proportions.

  14. Mercuric iodide semiconductor detectors encapsulated in polymeric resin

    Energy Technology Data Exchange (ETDEWEB)

    Martins, Joao F. Trencher; Santos, Robinson A. dos; Ferraz, Caue de M.; Oliveira, Adriano S.; Velo, Alexandre F.; Mesquita, Carlos H. de; Hamada, Margarida M., E-mail: mmhamada@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Disch, Christian; Fiederle, Michael [Albert-Ludwigs Universität Freiburg - UniFreibrug, Freiburg Materials Research Center - FMF, Freiburg (Germany)

    2015-07-01

    The development of new semiconductor radiation detectors always finds many setback factors, such as: high concentration of impurities in the start materials, poor long term stability, the surface oxidation and other difficulties discussed extensively in the literature, that limit their use. In this work was studied, the application of a coating resin on HgI2 detectors, in order to protect the semiconductor crystal reactions from atmospheric gases and to isolate electrically the surface of the crystals. Four polymeric resins were analyzed: Resin 1: 50% - 100%Heptane, 10% - 25% methylcyclohexane, <1% cyclohexane; Resin 2: 25% - 50% ethanol, 25% - 50% acetone, <2,5% ethylacetate; Resin 3: 50% - 100% methylacetate, 5% - 10% n-butylacetate; Resin 4: 50% - 100% ethyl-2-cyanacrylat. The influence of the polymeric resin type used on the spectroscopic performance of the HgI{sub 2} semiconductor detector is, clearly, demonstrated. The better result was found for the detector encapsulated with Resin 3. An increase of up to 26 times at the stability time was observed for the detectors encapsulated compared to that non-encapsulated detector. (author)

  15. Current responsivity of semiconductor superlattice THz-photon detectors

    DEFF Research Database (Denmark)

    Ignatov, Anatoly A.; Jauho, Antti-Pekka

    1999-01-01

    The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

  16. Semiconductor radiation detectors technology and applications

    CERN Document Server

    2018-01-01

    The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

  17. Measurement of neutron flux by semiconductor detector; Merenje raspodele neutronskog fluksa poluprovodnickim detektorom

    Energy Technology Data Exchange (ETDEWEB)

    Obradovic, D; Bosevski, T [The Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

    1965-07-01

    Using semiconductor detectors for measuring the neutron flux distribution is considered suitable and faster than using activation foils. Results of radial neutron flux distribution obtained by semiconductor detectors are presented.

  18. Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

    Science.gov (United States)

    Samedov, Victor V.

    2018-01-01

    Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

  19. Semiconductor tracker final integration and commissioning in the ATLAS detector

    International Nuclear Information System (INIS)

    Robichaud-Veronneau, Andree

    2008-01-01

    The SemiConductor Tracker (SCT) is part of the Inner Detector of the ATLAS experiment at the LHC. It is located between the Pixel detector and the Transition Radiation Tracker (TRT). During 2006 and 2007, the SCT was installed in its final position inside the ATLAS detector. The SCT barrel was lowered in 2006 and was tested for connectivity and noise. Common tests with the TRT to look for pick-up noise and grounding issues were also performed. The SCT end-caps were installed during summer 2007 and will undergo similar checks. The results from the various tests done before and after installation will be presented here.

  20. Semiconductors for room temperature nuclear detector applications

    CERN Document Server

    James, Ralph B

    1995-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The""Willardson and Beer""Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series.

  1. Energy response of neutron area monitor with silicon semiconductor detector

    International Nuclear Information System (INIS)

    Kitaguchi, Hiroshi; Izumi, Sigeru; Kobayashi, Kaoru; Kaihara, Akihisa; Nakamura, Takashi.

    1993-01-01

    A prototype neutron area monitor with a silicon semiconductor detector has been developed which has the energy response of 1 cm dose equivalent recommended by the ICRP-26. Boron and proton radiators are coated on the surface of the silicon semiconductor detector. The detector is set at the center of a cylindrical polyethylene moderator. This moderator is covered by a porous cadmium board which serves as the thermal neutron absorber. Neutrons are detected as α-particles generated by the nuclear reaction 10 B(n,α) 7 Li and as recoil protons generated by the interaction of fast neutrons with hydrogen. The neutron energy response of the monitor was measured using thermal neutrons and monoenergetic fast neutrons generated by an accelerator. The response was consistent with the 1 cm dose equivalent response required for the monitor within ±34% in the range of 0.025 - 15 Mev. (author)

  2. 1-D position sensitive single carrier semiconductor detectors

    International Nuclear Information System (INIS)

    Zhong He; Knoll, G.F.; Wehe, D.K.; Rojeski, R.; Mastrangelo, C.H.; Hammig, M.; Barrett, C.; Uritani, A.

    1996-01-01

    A single polarity charge sensing method has been studied using coplanar electrodes on 5 mm cubes of CdZnTe γ-ray detectors. This method can ameliorate the hole trapping problem of room-temperature semiconductor detectors. Our experimental results confirm that the energy resolution is dramatically improved compared with that obtained using the conventional readout method, but is still about an order of magnitude worse than the theoretical limit. A method to obtain the γ-ray interaction depth between the cathode and the anode is presented here. This technique could be used to correct for the electron trapping as a function of distance from the coplanar electrodes. Experimental results showed that a position resolution of about 0.9 mm FWHM at 122 keV can be obtained. These results will be of interest in the design of higher performance room-temperature semiconductor γ-ray detectors. (orig.)

  3. 12 GeV detector technology at Jefferson Lab

    Energy Technology Data Exchange (ETDEWEB)

    Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

    2013-04-19

    The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

  4. Semiconductor pixel detectors for digital mammography

    International Nuclear Information System (INIS)

    Novelli, M.; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S.

    2003-01-01

    We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown

  5. Semiconductor pixel detectors for digital mammography

    Energy Technology Data Exchange (ETDEWEB)

    Novelli, M. E-mail: marzia.novelli@pi.infn.it; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S

    2003-08-21

    We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown.

  6. Towards time-of-flight PET with a semiconductor detector

    Science.gov (United States)

    Ariño-Estrada, Gerard; Mitchell, Gregory S.; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.; Cherry, Simon R.

    2018-02-01

    The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

  7. Cryostat for an well logging probe using a semiconductor detector

    International Nuclear Information System (INIS)

    Tapphorn, R.M.

    1978-01-01

    This invention proposes to construct an well logging tool of the type comprising a semiconductor radiation detector devoid of the defects usually observed. This aim is attained by means of a cryostat to cool a semiconductor radiation detector in a restricted space where the temperature is high. It includes a long box dimensioned to pass through a bore hole, a cryogenic chamber housed in the box, a vacuum chamber thermally insulating the cryogenic chamber and placed around it, a semiconductor radiation detector housed in the vacuum chamber in thermal contact with the cryogenic chamber and an active vacuum pump fitted in the box and connected to the vacuum chamber to maintain a vacuum in it. In an improved version, the vacuum pump is fitted outside the cryostat so that it operates independently of the temperature conditions in the cryostat. If the pump needs to be cooled to reduce the gas discharge, it can be fitted inside the cryostat and connected to the cryogenic chamber or a second cryostat can also be provided to cool the pump. The vacuum pump is designed to maintain the vacuum in the thermal insulation vacuum chamber at a desired figure, preferably 10 -4 Torr or under, in order to preserve the integrity of the thermal insulation layer around the cryogenic chamber and thereby extending the efficient operating period of the detector. The cryogenic material used is preferably of fusion resistant type such as Freon 22 [fr

  8. Development and application of nuclear radiation detector made from high resistivity silicon and compound semiconductor

    International Nuclear Information System (INIS)

    Ding Honglin; Zhang Xiufeng; Zhang Wanchang; Li Jiang

    1995-11-01

    The development of high resistivity silicon detectors and compound semiconductor detectors as well as their application in nuclear medicine are described. It emphasizes on several key techniques in fabricating detectors in order to meet their application in nuclear medicine. As for a high resistivity silicon detector, its counting rate to 125 I 28.5 keV X-ray has to be improved. So employing a conic mesa structure can increase the thickness of samples, and can raise the electric field of collecting charges under the same bias voltage. As for a GaAs detector, its performance of collecting charges has to be improved. So the thicknesses of GaAs samples are decreased and proper thermal treatment to make Ni-Ge-Au ohmic contacts are employed. Applying a suitable reverse bias voltage can obtain a fully depleted detector, and can obtain a lower forward turn-on voltage and a thinner weak electric field region. After resolving these key techniques, the performance of GaAs detectors has been distinctly improved. The count rate to 125 I X-ray has increased by three or five times under the same testing condition and background circumstance (2 refs., 8 figs., 3 tabs.)

  9. High-Performance γ spectrometry Using Ge(Li) Detectors

    International Nuclear Information System (INIS)

    Brethon, J.; Libs, G.; Detourne, G.; Legrand, J.; Boulanger, J.

    1968-01-01

    This report describes a high resolution gamma spectrometer design which use Ge-Li detectors, a cooled field effect transistor preamplifier, and a spectrum stabiliser. The obtained resolution and the 122 keV gamma ray of the 57 Co is 0.96 keV, and 239 Pu, 233 Pa and 95 Zr + 95 Nb spectra are shown for the example. (authors) [fr

  10. Zero cross over timing with coaxial Ge(Li) detectors

    International Nuclear Information System (INIS)

    El-Ibiary, M.Y.

    1979-07-01

    The performance of zero cross over timing systems of the constant fraction or amplitude rise time compensated type using coaxial Ge(Li) detectors is analyzed with special attention to conditions that compromise their energy-independence advantage. The outcome is verified against existing experimental results, and the parameters that lead to minimum disperson, as well as the value of the dispersion to be expected, are given by a series of charts

  11. A spectrometer filter for semiconductor and scintillation detectors

    International Nuclear Information System (INIS)

    Andronov, O.I.; Brovchenko, V.G.; Evdokimov, S.T.

    1995-01-01

    The paper describes an integrating low-pass filter which takes signals from a delay line. The filter changes triangular pulses into rectangular ones. The energy resolution of a semiconductor detector whose signal is processed by the filter is 15-20% better than using a common RC-filter. The integrator stores a charge due to the scintillation pulse during the integration time without loss. The energy and time resolution of the device with the spectrometer filter is better than with an RC-filter. The energy resolution of a bismuth-germanate detector in recording radiation from 137 Cs is 9.75%

  12. Application of imitation for energy calibration of silicon semiconductor detectors

    International Nuclear Information System (INIS)

    Aivazyan, G.M.; Badalyan, H.V.; Mikaelyan, M.A.

    2003-01-01

    An effective method is described for energy calibration of semiconductor detectors (SCD) with different thickness. The method is based on imitating the charge on the input of the preamplifier deposited in SCD by known energy ionizing particles, the imitation being performed by a pulser with a partial with use of α-active sources. The results of laboratory studies of the described method are given with detectors of either large, 50-1000μm, or small, 18-20 μm, thickness

  13. Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kocak, B.; Ciftci, Y.O., E-mail: yasemin@gazi.edu.tr

    2016-05-15

    Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.

  14. Palladium silicide - a new contact for semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Totterdell, D.H.J.

    1981-11-01

    Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

  15. Photon detector composed of metal and semiconductor nanoparticles

    International Nuclear Information System (INIS)

    Takahashi, Atsuo; Minoura, Norihiko; Karube, Isao

    2005-01-01

    Applying the function of the single electron transistor, a novel photon detector consisting of a self-assembled structure of metal and semiconductor nanoparticles and an organic insulating layer was developed. It showed coulomb blockade behavior under dark conditions and remarkable increase in current corresponding to light intensity under light irradiation. Ultraweak photon emission of about 600 counts per second in the ultraviolet region could be detected at room temperature by this photon counter

  16. Use of semiconductor detectors for radioactive waste account and control

    CERN Document Server

    Davydov, L N; Zakharchenko, A A

    2002-01-01

    The possibilities and development status of the contemporary semiconductor detectors and detecting devices intended for radiation monitoring at nuclear industry enterprises, including Chernobyl Shelter and depositories of nuclear wastes are shown. Such devices,created in the last years, can be successfully used for measurements of the gamma-radiation dose rate as well as for the isotope composition evaluation of nuclear materials and wastes, both during the work cycles and in emergency situations.

  17. On load resistor noise in preamplifiers for semiconductor detectors

    International Nuclear Information System (INIS)

    Baldin, S.A.; Bajramashvili, I.A.; Gubin, S.F.

    1975-01-01

    The main causes resulting in the deterioration of energy resolution in preamplifiers for semiconductor detectors (scd) with a resistor in the feedback circuit are discussed. A comparison of noise characteristics has been carried out of a number of high-resistance commercial and experimental resistors. The resistor noise dependence on the nature of drop of the resistor impedance active part in the region up to 100 Kc, as well as on the resistor spurious capacitance in shown

  18. Present status and future trends of semiconductor detectors

    International Nuclear Information System (INIS)

    Lakatos, Tamas

    1988-01-01

    Some examples of the applications of semiconductor radiation detectors are briefly outlined, in order to illustrate development trends. The major parameters including energy resolution and dead time are discussed, and their improvement by the application of temporally varying parameter filters is pointed out. Development trends point toward low-loss signal processing by using adaptive filtering, possibly digital filtering. (R.P.) 14 refs.; 3 figs

  19. Systematization of efficiency correction for gamma-ray disk sources with semiconductor detectors

    International Nuclear Information System (INIS)

    Chatani, Hiroshi

    1999-01-01

    Full energy peak efficiency correction for disk sources has been systematically studied using the mapping method with two high-purity germanium detectors and two low-energy photon spectrometers. The following are found using only single-line (i.e., no coincidence summing loses) γ-rays: (1) The efficiency distributions on a plane parallel to the entrance window of semiconductor detectors is in perfect accord with Gaussian curves inside the circumference of the cylindrical Ge crystal, however, they deviate from the curves outside the circumference. (2) The width parameters of the Gaussian function fitted to the efficiency distributions have a systematic relationship with γ-ray energy. (3) The mapping method is of practical use and has satisfactory accuracy

  20. Radiation-hard semiconductor detectors for SuperLHC

    CERN Document Server

    Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

    2005-01-01

    An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

  1. Proposal for a semiconductor high resolution tracking detector

    International Nuclear Information System (INIS)

    Rehak, P.

    1983-01-01

    A 'new' concept for detection and tracking of charged particles in high energy physics experiments is proposed. It combines a well known high purity semiconductor diode detector (HPSDD) with a heterojunction structure (HJ) and a negative electron affinity (NEA) surface. The detector should be capable of providing a two dimensional view (few cm 2 ) of multi-track events with the following properties: a) position resolution down to a few μm (10 8 position elements); b) high density of information (10 2 -10 3 dots per mm of minimum ionizing track); c) high rate capabilities (few MHz); d) live operation with options to be triggered and/or the information from the detector can be used as an input for the decision to record an event. (orig.)

  2. Semiconductor Pixel detectors and their applications in life sciences

    International Nuclear Information System (INIS)

    Jakubek, J

    2009-01-01

    Recent advances in semiconductor technology allow construction of highly efficient and low noise pixel detectors of ionizing radiation. Steadily improving quality of front end electronics enables fast digital signal processing in each pixel which offers recording of more complete information about each detected quantum (energy, time, number of particles). All these features improve an extend applicability of pixel technology in different fields. Some applications of this technology especially for imaging in life sciences will be shown (energy and phase sensitive X-ray radiography and tomography, radiography with heavy charged particles, neutron radiography, etc). On the other hand a number of obstacles can limit the detector performance if not handled. The pixel detector is in fact an array of individual detectors (pixels), each of them has its own efficiency, energy calibration and also noise. The common effort is to make all these parameters uniform for all pixels. However an ideal uniformity can be never reached. Moreover, it is often seen that the signal in one pixel can affect the neighbouring pixels due to various reasons (e.g. charge sharing). All such effects have to be taken into account during data processing to avoid false data interpretation. A brief view into the future of pixel detectors and their applications including also spectroscopy, tracking and dosimetry is given too. Special attention is paid to the problem of detector segmentation in context of the charge sharing effect.

  3. A semiconductor parameter analyzer for ionizing radiation detectors

    International Nuclear Information System (INIS)

    Santos, Luiz A.P.

    2009-01-01

    Electrometers and ion chamber are normally used to make several types of measurements in a radiation field and there is a unique voltage applied to each detector type. Some electronic devices that are built of semiconductor materials like silicon crystal can also be used for the same purpose. In this case, a characteristic curve of the device must be acquired to choose an operation point which consists of an electrical current or voltage to be applied to the device. Unlike ion chambers, such an electronic device can have different operation points depending on its current versus voltage curve (I x V). The best operation point of the device is also a function of the radiation, energy, dose rate and fluence. The purpose of this work is to show a semiconductor parameter analyzer built to acquire I x V curves as usually, and the innovation here is the fact that it can be used to obtain such a parametric curve when a quad-polar device is under irradiation. The results demonstrate that the system is a very important tool to scientists interested to evaluate a semiconductor detector before, during and after irradiation. A collection of results for devices under an X-ray beam and a neutron fluence are presented: photodiode, phototransistors, bipolar transistor and MOSFET. (author)

  4. A 13-element Ge detector for fluorescence EXAFS

    International Nuclear Information System (INIS)

    Cramer, S.P.; Tench, O.; Yocum, M.; George, G.N.

    1988-01-01

    At low concentrations, recording X-ray absorption spectra in fluorescence excitation mode is more sensitive than transmission mode. For dilute samples, the fluorescence signal is often obscured by scattered X-rays, and matrix and filter fluorescence. To discriminate against this background, while maintaining a large angular acceptance and high count rate capability, we have constructed a new detection system based on an array of intrinsic Ge detectors. The device uses 13 individuall 11 mm diameter Ge detectors, clustered in a 1:3:5:3:1 pattern on a common cryostat, combined with Soller slits and filters to reduce the background signals. Pulsed optical feedback preamplifiers are followed by Gaussian-shaping amplifiers having fast discriminators to register the incoming count rate (ICR). Correction for dead time using the ICR signal allowed operation in the vicinity of 75 kHz per channel, with a 1 μs shaping time at 6 keV. For lower count rate applications, an average resolution of 160 eV at 5.9 keV was obtained with 8 μs shaping. Recent experience with this detector at the Stanford Synchrotron Radiation Laboratory is presented. The performance is illustrated using spectra obtained from phosphorus compounds and a thin iridium foil. The performance of this device is compared with previous fluorescence detection schemes, such as those using filter/slit combinations or barrel monochromators. (orig.)

  5. Dual-sided microstructured semiconductor neutron detectors (DSMSNDs)

    International Nuclear Information System (INIS)

    Fronk, Ryan G.; Bellinger, Steven L.; Henson, Luke C.; Ochs, Taylor R.; Smith, Colten T.; Kenneth Shultis, J.; McGregor, Douglas S.

    2015-01-01

    Microstructured semiconductor neutron detectors (MSNDs) have in recent years received much interest as high-efficiency replacements for thin-film-coated thermal neutron detectors. The basic device structure of the MSND involves micro-sized trenches that are etched into a vertically-oriented pvn-junction diode that are backfilled with a neutron converting material. Neutrons absorbed within the converting material induce fission of the parent nucleus, producing a pair of energetic charged-particle reaction products that can be counted by the diode. The MSND deep-etched microstructures produce good neutron-absorption and reaction-product counting efficiencies, offering a 10× improvement in intrinsic thermal neutron detection efficiency over thin-film-coated devices. Performance of present-day MSNDs are nearing theoretical limits; streaming paths between the conversion-material backfilled trenches, allow a considerable fraction of neutrons to pass undetected through the device. Dual-sided microstructured semiconductor neutron detectors (DSMSNDs) have been developed that utilize a complementary second set of trenches on the back-side of the device to count streaming neutrons. DSMSND devices are theoretically capable of greater than 80% intrinsic thermal neutron detection efficiency for a 1-mm thick device. The first such prototype DSMSNDs, presented here, have achieved 29.48±0.29% nearly 2× better than MSNDs with similar microstructure dimensions.

  6. Stable room-temperature thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

    2017-10-01

    Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  7. Stable room-temperature thallium bromide semiconductor radiation detectors

    Directory of Open Access Journals (Sweden)

    A. Datta

    2017-10-01

    Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  8. Probing Sub-GeV Dark Matter with Conventional Detectors.

    Science.gov (United States)

    Kouvaris, Chris; Pradler, Josef

    2017-01-20

    The direct detection of dark matter particles with mass below the GeV scale is hampered by soft nuclear recoil energies and finite detector thresholds. For a given maximum relative velocity, the kinematics of elastic dark matter nucleus scattering sets a principal limit on detectability. Here, we propose to bypass the kinematic limitations by considering the inelastic channel of photon emission from bremsstrahlung in the nuclear recoil. Our proposed method allows us to set the first limits on dark matter below 500 MeV in the plane of dark matter mass and cross section with nucleons. In situations where a dark-matter-electron coupling is suppressed, bremsstrahlung may constitute the only path to probe low-mass dark matter awaiting new detector technologies with lowered recoil energy thresholds.

  9. Probing Sub-GeV Dark Matter with Conventional Detectors

    DEFF Research Database (Denmark)

    Kouvaris, Chris; Pradler, Josef

    2017-01-01

    The direct detection of dark matter particles with mass below the GeV scale is hampered by soft nuclear recoil energies and finite detector thresholds. For a given maximum relative velocity, the kinematics of elastic dark matter nucleus scattering sets a principal limit on detectability. Here, we...... propose to bypass the kinematic limitations by considering the inelastic channel of photon emission from bremsstrahlung in the nuclear recoil. Our proposed method allows us to set the first limits on dark matter below 500 MeV in the plane of dark matter mass and cross section with nucleons. In situations...... where a dark-matter-electron coupling is suppressed, bremsstrahlung may constitute the only path to probe low-mass dark matter awaiting new detector technologies with lowered recoil energy thresholds....

  10. Measurement of neutron flux distribution by semiconductor detector

    International Nuclear Information System (INIS)

    Obradovic, D.; Bosevski, T.

    1964-01-01

    Application of semiconductor detectors for measuring neutron flux distribution is about 10 times faster than measurements by activation foils and demands significantly lower reactor power. Following corrections are avoided: mass of activation foils which influences the self shielding, nuclear decay during activity measurements; counter dead-time. It is possible to control the measured data during experiment and repeat measurements if needed. Precision of the measurement is higher since it is possible to choose the wanted statistics. The method described in this paper is applied for measurements at the RB reactor. It is concluded that the method is suitable for fast measurements but the activation analysis is still indispensable

  11. Testing in a stratospheric balloon of a semiconductor detector altimeter

    International Nuclear Information System (INIS)

    Gilly, L.; Jourdan, P.

    1968-01-01

    An altimeter containing a semiconductor detector has been operated on flight. We have used a stratospheric balloon launched from AIRE-SUR-ADOUR with the C.N.E.S. collaboration. During this assay two apparatus have been used. The first allowed to follow the balloon during its ascension and descent, the second to follow its evolution at its maximum altitude. Informations transmitted by radio and recorded on Magnetophon, have been studied after the flight. Results are identical with these given by the barometer used by the C.N.E.S. in this essay. (authors) [fr

  12. Semiconductor micropattern pixel detectors a review of the beginnings

    CERN Document Server

    Heijne, Erik H M

    2001-01-01

    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with µW power on a pixel area of less than 0.04 mm2, retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at > 10 MHz rates with unambiguous track reconstruction even at particle multiplicities > 10 cm-2. The noise in a channel was ~100 e- r.m.s. and enabled binary operation with random noise 'hits' at a level 30 Mrad, respectively.

  13. Detection of secondary electrons with pixelated hybrid semiconductor detectors

    International Nuclear Information System (INIS)

    Gebert, Ulrike Sonja

    2011-01-01

    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10 -5 mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm 2 area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm 2 . To achieve this, a new photocathode was mounted in a shorter distance to the detector. The measurements where

  14. Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

    Science.gov (United States)

    2016-05-16

    AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

  15. GeAs and SiAs monolayers: Novel 2D semiconductors with suitable band structures

    Science.gov (United States)

    Zhou, Liqin; Guo, Yu; Zhao, Jijun

    2018-01-01

    Two dimensional (2D) materials provide a versatile platform for nanoelectronics, optoelectronics and clean energy conversion. Based on first-principles calculations, we propose a novel kind of 2D materials - GeAs and SiAs monolayers and investigate their atomic structure, thermodynamic stability, and electronic properties. The calculations show that monolayer GeAs and SiAs sheets are energetically and dynamically stable. Their small interlayer cohesion energies (0.191 eV/atom for GeAs and 0.178 eV/atom for SiAs) suggest easy exfoliation from the bulk solids that exist in nature. As 2D semiconductors, GeAs and SiAs monolayers possess band gap of 2.06 eV and 2.50 eV from HSE06 calculations, respectively, while their band gap can be further engineered by the number of layers. The relatively small and anisotropic carrier effective masses imply fast electric transport in these 2D semiconductors. In particular, monolayer SiAs is a direct gap semiconductor and a potential photocatalyst for water splitting. These theoretical results shine light on utilization of monolayer or few-layer GeAs and SiAs materials for the next-generation 2D electronics and optoelectronics with high performance and satisfactory stability.

  16. Semiconductor detectors in current energy dispersive X-ray spectral analysis

    Energy Technology Data Exchange (ETDEWEB)

    Betin, J; Zhabin, E; Krampit, I; Smirnov, V

    1980-04-01

    A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc.

  17. Property of a CZT semiconductor detector for radionuclide identification

    International Nuclear Information System (INIS)

    Chun, Sung-Dae; Park, Se-Hwan; Ha, Jang Ho; Kang, Sang Mook; Lee, Dong Hoon; Kim, Yong Kyun; Cho, Yun Ho; Kim, Jong Kyung; Hong, Duk-Geun

    2008-01-01

    Compound semiconductors of high Z value material have been studied intensively for X-ray and γ-ray spectroscopy at room temperature. CdZnTe has wide band gap energy as 1.6 eV and can provide high quantum efficiency with reasonably good energy resolution at room temperature. This study is aimed at determining radionuclide analysis ability by measuring energy resolution of CZT detector which will be applied at nuclear material identification purpose. For experiment we used a CZT detector (5 x 5 x 5 mm 3 ) which is manufactured by eV Products. We have performed our measurement at varied temperatures similar to the outdoor environment for the investigation about temperature dependence of energy resolution and peak centroid fluctuation of CZT detector by using gas cooling and Peltier cooling methods. In order to test radionuclide identification we used various radionuclide samples; plutonium, europium and other standard sources. Pulse height spectra were obtained by standard electronics which consists of a preamplifier, a shaping amplifier, and a multi-channel analyzer. (author)

  18. The use of portable semiconductor detectors in nuclear medicine

    International Nuclear Information System (INIS)

    Kuhn, W.

    1986-01-01

    A new biotelemetric system, CdTe semiconductor detectors with portable hard memory, for the registration of time activity curves in particular body regions of patients is introduced. The hard- and software connection of the system to the already present EDV configuration is described. The characteristics of the detectors are studied, theoretically explained and compared to the information given by the producers. By means of the determination of the ortho-iodine hippuric acid clearance (OIH) from the registration of the time activity curves in the chest the first information about the practicability in clinical use as well as the validity of the method are deduced. The detector system proved itself to be susceptible to problems, especially from manipulation of the cable or from movement of the patient. The determination of the OIH clearance from the partial body curve was problematic, because an extrapolation to the whole body based on the specific OIH kinetic in the small, observed tissue section is difficult. The comparison with the camera picture should be carefully evaluated, because this method has in principle the same inadequacies. (orig./HP) [de

  19. Study of pulse shapes in Ge detectors with PET

    Energy Technology Data Exchange (ETDEWEB)

    Grabmayr, Peter; Hegai, Alexander; Jochum, Josef; Schmitt, Christopher; Schuetz, Ann-Kathrin [Eberhard Karls Univeritaet Tuebingen (Germany); Collaboration: GERDA-Collaboration

    2016-07-01

    The Gerda collaboration aims to determine the half life of the neutrinoless double beta decay (0νββ) of {sup 76}Ge. For Phase II Gerda wants to reduce the background contribution significantly by active background-suppression techniques. One of such techniques is the pulse shape analysis of signals induced by the interaction of radiation with the detector. The pulse shapes depend not only on the energy of the interacting gamma, the geometry and field configuration but also on the location of interaction in the crystal. The waveform and the location of the interaction in the germanium can be determined by positron-emission-tomography (PET). First results of this novel pulse shape study with the PET will be presented in this talk.

  20. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Science.gov (United States)

    Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

    2017-11-01

    In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  1. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Directory of Open Access Journals (Sweden)

    Abd Rahim Alhan Farhanah

    2017-01-01

    Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  2. Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar

    2018-02-01

    Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

  3. Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

    International Nuclear Information System (INIS)

    Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

    2005-01-01

    A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

  4. Development and characterization of the lead iodide semiconductor detector

    International Nuclear Information System (INIS)

    Oliveira, Icimone Braga de

    2001-01-01

    A methodology for purification and growth of PbI 2 crystal as well as for its characterization as a room temperature radiation detector was developed in this work. Commercial salts were purified using the zone refining method and, for the purified material growth, the Bridgman method was used. To calculate the purification efficiency, studies of the decrease impurities concentrations were made in the salts and in three sections of the materials purified, using the neutron activation analysis technique. The results showed that the impurities segregate preferentially in the ingot final section. A significant decrease of the impurities concentration in function of the purification pass number was observed. The grown crystals presented good crystalline quality according to the results of the X-ray diffraction analysis. To evaluate the crystal as a semiconductor detector, measurements of dark leakage current, resistivity and the response of ( 241 Am) alpha particle and ( 241 Am, 57 Co, 133 Ba and 137 Cs) gamma rays were carried out. The radiation response is strongly dependent on the crystals purity. The crystals purified with 500 passes exhibited energy resolution of 10% for 241 Am alpha particle and the gamma rays resolution was compatible with the literature. The photosensibility of the PbI 2 crystal found in the wavelength from 400 to 600 nm range suggests an another application at this crystal as a photodetector to be coupled to scintillators. (author)

  5. Infrared detectors and emitters on the basis of semiconductor quantum structures

    International Nuclear Information System (INIS)

    Kruck, P. R.

    1997-08-01

    Intersubband transitions in Si/SiGe and GaAs/AlGaAs semiconductor quantum structures have been investigated with respect to possible application as infrared detectors and emitters. Investigation of the polarization dependence of subband absorption in Si/SiGe quantum wells shows both transverse magnetic and transverse electric polarized excitations. Intersubband transitions to several excited states are identified by comparison with self-consistent Luttinger-Kohn type calculations. On the basis of these investigations a quantum well infrared photodetector operating between 3 and 8 μm with a detectivity as high as D*=2 x 10 10 cm Hz 1/2 W -1 under normal incidence illumination and at an operating temperature of T=77K is realized. The polarization dependence of the photoconductivity shows the importance of both the absorption and the vertical transport properties of the photoexcited carriers for the detection mechanism. On the basis of the GaAs/AlGaAs material system a unipolar quantum cascade light emitting diode (LED) has been realized. The LED operates at a wavelength of 6.9 μm. A detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm 2 the optical output power lies in the ten nanowatt range. (author)

  6. High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-01-01

    In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

  7. Determining dose rate with a semiconductor detector - Monte Carlo calculations of the detector response

    Energy Technology Data Exchange (ETDEWEB)

    Nordenfors, C

    1999-02-01

    To determine dose rate in a gamma radiation field, based on measurements with a semiconductor detector, it is necessary to know how the detector effects the field. This work aims to describe this effect with Monte Carlo simulations and calculations, that is to identify the detector response function. This is done for a germanium gamma detector. The detector is normally used in the in-situ measurements that is carried out regularly at the department. After the response function is determined it is used to reconstruct a spectrum from an in-situ measurement, a so called unfolding. This is done to be able to calculate fluence rate and dose rate directly from a measured (and unfolded) spectrum. The Monte Carlo code used in this work is EGS4 developed mainly at Stanford Linear Accelerator Center. It is a widely used code package to simulate particle transport. The results of this work indicates that the method could be used as-is since the accuracy of this method compares to other methods already in use to measure dose rate. Bearing in mind that this method provides the nuclide specific dose it is useful, in radiation protection, since knowing what the relations between different nuclides are and how they change is very important when estimating the risks

  8. Radiation damage measurements in room temperature semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Franks, L.A.; Olsen, R.W.; James, R.B.; Brunett, B.A.; Walsh, D.S.; Doyle, B.L.; Vizkelethy, G.; Trombka, J.I.

    1998-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI 2 ) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 10 p/cm 2 and significant bulk leakage after 10 12 p/cm 2 . CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 x 10 9 p/cm 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10 10 n/cm 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 x 10 10 α/cm 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 x 10 9 α/cm 2 . CT detectors show resolution losses after fluences of 3 x 10 9 p/cm 2 at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 x 10 10 n/cm 2 . Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10 12 p/cm 2 and with 1.5 GeV protons at fluences up to 1.2 x 10 8 p/cm 2 . Neutron exposures at 8 MeV have been reported at fluences up to 10 15 n/cm 2 . No radiation damage was reported under these irradiation conditions

  9. Position sensitive detector with semiconductor and image electron tube comprising such a detector

    International Nuclear Information System (INIS)

    Roziere, Guy.

    1977-01-01

    This invention concerns a position sensitive detector comprising a semiconducting substrate. It also concerns the electron tubes in which the detector may be incorporated in order to obtain an image formed at the tube input by an incident flux of particles or radiation. When a charged particle or group of such particles, electrons in particular, enter the space charge region of an inversely biased semiconductor diode, the energy supplied by these particles releases in the diode a certain number of electron-hole pairs which move in the field existing in the area towards the diode contacts. A corresponding current arises in the connections of this diode which constitutes the signal corresponding to the incident energy. Such a tube or chain of tubes is employed in nuclear medicine for observing parts of the human body, particularly by gamma radiation [fr

  10. Production, characterization and operation of {sup 76}Ge enriched BEGe detectors in GERDA

    Energy Technology Data Exchange (ETDEWEB)

    Agostini, M.; Bode, T.; Budjas, D.; Janicsko Csathy, J.; Lazzaro, A.; Schoenert, S. [Technische Universitaet Muenchen, Physik Department and Excellence Cluster Universe, Munich (Germany); Allardt, M.; Barros, N.; Domula, A.; Lehnert, B.; Wester, T.; Wilsenach, H.; Zuber, K. [Technische Universitaet Dresden, Institut fuer Kern- und Teilchenphysik, Dresden (Germany); Andreotti, E. [Institute for Reference Materials and Measurements, Geel (Belgium); Eberhard Karls Universitaet Tuebingen, Physikalisches Institut, Tuebingen (Germany); Bakalyarov, A.M.; Belyaev, S.T.; Lebedev, V.I.; Zhukov, S.V. [National Research Centre ' ' Kurchatov Institute' ' , Moscow (Russian Federation); Balata, M.; D' Andrea, V.; Ioannucci, L.; Junker, M.; Laubenstein, M.; Macolino, C.; Nisi, S.; Zavarise, P. [INFN Laboratori Nazionali del Gran Sasso and Gran Sasso Science Institute, Assergi (Italy); Barabanov, I.; Bezrukov, L.; Gurentsov, V.; Inzhechik, L.V.; Kazalov, V.; Kuzminov, V.V.; Lubsandorzhiev, B.; Yanovich, E. [Institute for Nuclear Research of the Russian Academy of Sciences, Moscow (Russian Federation); Baudis, L.; Benato, G.; Walter, M. [Physik Institut der Universitaet Zuerich, Zurich (Switzerland); Bauer, C.; Heisel, M.; Heusser, G.; Hofmann, W.; Kihm, T.; Kirsch, A.; Knoepfle, K.T.; Lindner, M.; Maneschg, W.; Salathe, M.; Schreiner, J.; Schwingenheuer, B.; Simgen, H.; Smolnikov, A.; Strecker, H.; Wagner, V.; Wegmann, A. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Becerici-Schmidt, N.; Caldwell, A.; Liao, H.Y.; Majorovits, B.; O' Shaughnessy, C.; Palioselitis, D.; Schulz, O.; Vanhoefer, L. [Max-Planck-Institut fuer Physik, Munich (Germany); Bellotti, E.; Pessina, G. [Universita Milano Bicocca, Dipartimento di Fisica, Milan (Italy); INFN Milano Bicocca, Milan (Italy); Belogurov, S.; Kornoukhov, V.N. [Institute for Nuclear Research of the Russian Academy of Sciences, Moscow (Russian Federation); Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Bettini, A.; Brugnera, R.; Garfagnini, A.; Hemmer, S.; Sada, C.; Von Sturm, K. [Dipartimento di Fisica e Astronomia dell' Universita di Padova, Padua (Italy); INFN Padova, Padua (Italy); Borowicz, D. [Jagiellonian University, Institute of Physics, Cracow (Poland); Joint Institute for Nuclear Research, Dubna (Russian Federation); Brudanin, V.; Egorov, V.; Kochetov, O.; Nemchenok, I.; Rumyantseva, N.; Shevchik, E.; Zhitnikov, I.; Zinatulina, D. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Cattadori, C.; Gotti, C. [INFN Milano Bicocca, Milan (Italy); Chernogorov, A.; Demidova, E.V.; Kirpichnikov, I.V.; Vasenko, A.A. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Falkenstein, R.; Freund, K.; Grabmayr, P.; Hegai, A.; Jochum, J.; Schmitt, C.; Schuetz, A.K. [Eberhard Karls Universitaet Tuebingen, Physikalisches Institut, Tuebingen (Germany); Frodyma, N.; Misiaszek, M.; Pelczar, K.; Wojcik, M.; Zuzel, G. [Jagiellonian University, Institute of Physics, Cracow (Poland); Gangapshev, A. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Institute for Nuclear Research of the Russian Academy of Sciences, Moscow (Russian Federation); Gusev, K. [Joint Institute for Nuclear Research, Dubna (Russian Federation); National Research Centre ' ' Kurchatov Institute' ' , Moscow (Russian Federation); Technische Universitaet Muenchen, Physik Department and Excellence Cluster Universe, Munich (Germany); Hult, M.; Lutter, G. [Institute for Reference Materials and Measurements, Geel (Belgium); Klimenko, A.; Lubashevskiy, A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Lippi, I.; Stanco, L.; Ur, C.A. [INFN Padova, Padua (Italy); Pandola, L. [INFN Laboratori Nazionali del Sud, Catania (Italy); Pullia, A.; Riboldi, S. [Universita degli Studi di Milano, Dipartimento di Fisica, Milan (Italy); INFN Milano (Italy); Shirchenko, M. [Joint Institute for Nuclear Research, Dubna (Russian Federation); National Research Centre ' ' Kurchatov Institute' ' , Moscow (Russian Federation); Collaboration: GERDA Collaboration

    2015-02-01

    The GERmanium Detector Array (GERDA) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay (0νββ) of {sup 76}Ge. Germanium detectors made of material with an enriched {sup 76}Ge fraction act simultaneously as sources and detectors for this decay. During Phase I of the experiment mainly refurbished semi-coaxial Ge detectors from former experiments were used. For the upcoming Phase II, 30 new {sup 76}Ge enriched detectors of broad energy germanium (BEGe)- type were produced. A subgroup of these detectors has already been deployed in GERDA during Phase I. The present paper reviews the complete production chain of these BEGe detectors including isotopic enrichment, purification, crystal growth and diode production. The efforts in optimizing the mass yield and in minimizing the exposure of the {sup 76}Ge enriched germanium to cosmic radiation during processing are described. Furthermore, characterization measurements in vacuum cryostats of the first subgroup of seven BEGe detectors and their long-term behavior in liquid argon are discussed. The detector performance fulfills the requirements needed for the physics goals of GERDA Phase II. (orig.)

  11. Production, characterization and operation of {sup 76}Ge enriched BEGe detectors in GERDA

    Energy Technology Data Exchange (ETDEWEB)

    Agostini, M. [Physik Department and Excellence Cluster Universe, Technische Universität München, Munich (Germany); Allardt, M. [Institut für Kern- und Teilchenphysik, Technische Universität Dresden, Dresden (Germany); Andreotti, E. [Institute for Reference Materials and Measurements, Geel (Belgium); Physikalisches Institut, Eberhard Karls Universität Tübingen, Tübingen (Germany); Bakalyarov, A. M. [National Research Centre “Kurchatov Institute”, Moscow (Russian Federation); Balata, M. [INFN Laboratori Nazionali del Gran Sasso and Gran Sasso Science Institute, Assergi (Italy); and others

    2015-02-03

    The GERmanium Detector Array (Gerda) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay (0νββ) of {sup 76}Ge. Germanium detectors made of material with an enriched {sup 76}Ge fraction act simultaneously as sources and detectors for this decay. During Phase I of theexperiment mainly refurbished semi-coaxial Ge detectors from former experiments were used. For the upcoming Phase II, 30 new {sup 76}Ge enriched detectors of broad energy germanium (BEGe)-type were produced. A subgroup of these detectors has already been deployed in Gerda during Phase I. The present paper reviews the complete production chain of these BEGe detectors including isotopic enrichment, purification, crystal growth and diode production. The efforts in optimizing the mass yield and in minimizing the exposure of the {sup 76}Ge enriched germanium to cosmic radiation during processing are described. Furthermore, characterization measurements in vacuum cryostats of the first subgroup of seven BEGe detectors and their long-term behavior in liquid argon are discussed. The detector performance fulfills the requirements needed for the physics goals of Gerda Phase II.

  12. Production, characterization and operation of Ge enriched BEGe detectors in GERDA

    Science.gov (United States)

    Agostini, M.; Allardt, M.; Andreotti, E.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Barros, N.; Baudis, L.; Bauer, C.; Becerici-Schmidt, N.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Benato, G.; Bettini, A.; Bezrukov, L.; Bode, T.; Borowicz, D.; Brudanin, V.; Brugnera, R.; Budjáš, D.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; D'Andrea, V.; Demidova, E. V.; Domula, A.; Egorov, V.; Falkenstein, R.; Freund, K.; Frodyma, N.; Gangapshev, A.; Garfagnini, A.; Gotti, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hegai, A.; Heisel, M.; Hemmer, S.; Heusser, G.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Ioannucci, L.; Janicskó Csáthy, J.; Jochum, J.; Junker, M.; Kazalov, V.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Klimenko, A.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Lehnert, B.; Liao, H. Y.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Misiaszek, M.; Nemchenok, I.; Nisi, S.; O'Shaughnessy, C.; Palioselitis, D.; Pandola, L.; Pelczar, K.; Pessina, G.; Pullia, A.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salathe, M.; Schmitt, C.; Schreiner, J.; Schulz, O.; Schütz, A.-K.; Schwingenheuer, B.; Schönert, S.; Shevchik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Strecker, H.; Ur, C. A.; Vanhoefer, L.; Vasenko, A. A.; von Sturm, K.; Wagner, V.; Walter, M.; Wegmann, A.; Wester, T.; Wilsenach, H.; Wojcik, M.; Yanovich, E.; Zavarise, P.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

    2015-02-01

    The GERmanium Detector Array ( Gerda) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay () of Ge. Germanium detectors made of material with an enriched Ge fraction act simultaneously as sources and detectors for this decay. During Phase I of theexperiment mainly refurbished semi-coaxial Ge detectors from former experiments were used. For the upcoming Phase II, 30 new Ge enriched detectors of broad energy germanium (BEGe)-type were produced. A subgroup of these detectors has already been deployed in Gerda during Phase I. The present paper reviews the complete production chain of these BEGe detectors including isotopic enrichment, purification, crystal growth and diode production. The efforts in optimizing the mass yield and in minimizing the exposure of the Ge enriched germanium to cosmic radiation during processing are described. Furthermore, characterization measurements in vacuum cryostats of the first subgroup of seven BEGe detectors and their long-term behavior in liquid argon are discussed. The detector performance fulfills the requirements needed for the physics goals of Gerda Phase II.

  13. Amplifier channel for a fission fragment semiconductor detector

    International Nuclear Information System (INIS)

    Tyurin, G.P.

    1981-01-01

    To compensate the decrease of the transformation coefficient of fission fragment semiconductor detector (SCD) developed is a special amplification channel with controlled transfer coefficient. The block diagram of the channel is presented, the main functional units of which are as follows: preamplifying head with charge-sensitive and timing preamplifiers, linear amplifier and the circuit of spectrum position stabilization, which includes a differential discriminator, integrator and reference signal generator. The amplification channel is made in the CAMAC standard and has the following specifications: dinamical input capacitance of charge-sensitive amplifier c=10000 n PHI, signal amplitude at output of the linear amplifier at energy of fission fragments of 120 MeV has negative polarity and is equal to 5 V. Pulse amplitude change at SCD sensitivity decrease to 50% constitutes not more than 1%. Timing preamplifier has the gain factor at voltage of K=80 at front duration of 3.5 nc. Time resolution of the amplification channel is not worse than 1 nc. Dimensions of preamplifying head are 40x40x15 mm. The amplification channel permitted to use SCD for long-term measurements of fission fragment spectra [ru

  14. Semiconductor micropattern pixel detectors: a review of the beginnings

    International Nuclear Information System (INIS)

    Heijne, E.H.M.

    2001-01-01

    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with μW power on a pixel area of less than 0.04 mm 2 , retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at >10 MHz rates with unambiguous track reconstruction even at particle multiplicities >10 cm -2 . The noise in a channel was ∼100e - rms and enabled binary operation with random noise 'hits' at a level -8 . Rectangular pixels from 75 μmx500 μm down to 34 μmx125 μm have been used by different teams. In binary mode a tracking precision from 6 to 14 μm was obtained, and using analog interpolation one came close to 1 μm. Earlier work, still based on charge integrating imaging circuits, provided a starting point. Two systems each with more than 1 million sensor + readout channels have been built, for WA97-NA57 and for the Delphi very forward tracker. The use of 0.5 μm and 0.25 μm CMOS and enclosed geometry for the transistors in the pixel readout chips resulted in radiation hardness of ∼2 Mrad, respectively, >30 Mrad

  15. On selecting a sensitive region thickness of a silicon semiconductor detector for operation under counting conditions

    International Nuclear Information System (INIS)

    Pronkin, N.S.; Khakhalin, V.V.

    1972-01-01

    The paper discusses the selection of a thickness of a sensitive area of a silicon semiconductor detector, used in the count regime based on the signal to noise ratio and β-radiation registration efficiency. (author)

  16. Investigations on commercial semiconductor diodes as possible high dose rate radiation detectors

    International Nuclear Information System (INIS)

    Breitenhuber, L.; Kindl, P.; Obenaus, B.

    1992-12-01

    Investigations concerning the relevant properties of commercial semiconductor diodes such as their sensitivity and its dependence on accumulated dose, dose rate, energy, temperature and direction have been made in order to obtain their usefullness as radiation detectors. (authors)

  17. Performance and operation experience of the Atlas Semiconductor Tracker and Pixel Detector at the LHC.

    CERN Document Server

    Stanecka, E; The ATLAS collaboration

    2013-01-01

    After more than 3 years of successful operation at the LHC, we report on the operation and performance of the ATLAS Pixel Detector and Semi-Conductor Tracker (SCT) functioning in a high luminosity, high radiation environment.

  18. Industrial workshop on LASL semiconductor radiation-detector research and development

    International Nuclear Information System (INIS)

    Endebrock, M.

    1978-11-01

    An Industrial Workshop on LASL Semiconductor Radiation Detector Research and Development was held at the Los Alamos Scientific Laboratory (LASL) in the spring of 1977. The purpose was to initiate communication between our detector research and development program and industry. LASL research programs were discussed with special emphasis on detector problems. Industrial needs and capabilities in detector research and development were also presented. Questions of technology transfer were addressed. The notes presented here are meant to be informal, as were the presentations

  19. Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance

    Science.gov (United States)

    Duc Dung, Dang; Choi, Jiyoun; Feng, Wuwei; Cao Khang, Nguyen; Cho, Sunglae

    2018-03-01

    We report on the structural and magneto-transport properties of the as-grown and oxidized Mn:Ge magnetic semiconductors. Based on X-ray diffraction and X-ray photoelectron spectroscopy results, the samples annealed at 650 and 700 °C became fully oxidized and the chemical binding energies of Mn was found to be Mn3O4. Thus, the system became Mn3O4 clusters embedded in Ge1-yOy. The as-grown sample showed positive linear Hall effect and negligible negative magnetoresistance (MR), which trend remained for the sample annealed up to 550 °C. Interestingly, for the samples annealed at above 650 °C, we observed the anomalous Hall effect around 45 K and the giant positive MR, which are respectively 59.2% and 78.5% at 7 kOe annealed at 650 °C and 700 °C.

  20. Radiative lifetime of geminate and non-geminate pairs in amorphous semiconductors: a-Ge:H

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [Faculty of Technology, Charles Darwin University, Darwin, NT 0909 (Australia)

    2006-07-01

    Lifetimes of radiative recombination of geminate and non-geminate pairs in amorphous semiconductors are calculated at thermal equilibrium. The theory is applied to calculate the radiative lifetimes of type I and II geminate pairs and non-geminate pairs in hydrogenated amorphous germanium (a-Ge:H) and compared with the experimental results. The type II geminate pairs can exist in singlet and triplet spin states, only singlet is considered here, whereas the type I geminate pairs do not have spin dependence. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Semiconductor detectors in current energy dispersive X-ray spectral analysis

    International Nuclear Information System (INIS)

    Betin, J.; Zhabin, E.; Krampit, I.; Smirnov, V.

    1980-01-01

    A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc. (M.S.)

  2. Flux distribution by neutrons semi-conductors detectors during the startup of the EL4 reactor

    International Nuclear Information System (INIS)

    Fuster, S.; Tarabella, A.

    1967-01-01

    The Cea developed neutron semi-conductors detectors which allows a quasi-instantaneous monitoring of neutrons flux distribution, when placed in a reactor during the tests. These detectors have been experimented in the EL4 reactor. The experiment and the results are presented and compared with reference mappings. (A.L.B.)

  3. Compton suppression tests on Ge and BGO prototype detectors for GAMMASPHERE

    Energy Technology Data Exchange (ETDEWEB)

    Baxter, A M [Australian National Univ., Canberra, ACT (Australia); Khoo, T L; Bleich, M E; Carpenter, M P; Ahmad, I; Janssens, R V.F.; Moore, E F [Argonne National Lab., IL (United States); Bearden, I G [Purdue Univ., Lafayette, IN (United States); Beene, J R; Lee, I Y [Oak Ridge National Lab., TN (United States)

    1992-08-01

    In this paper, we report on measurements of the Compton suppression and overall P/T ratio of two Ge detectors in a BGO shield of the honeycomb pattern. These were the first prototype CSG detector assemblies for GAMMASPHERE. A more detailed description of these results will be published later. (author). 4 refs., 3 figs.

  4. Charge collection efficiency in a semiconductor radiation detector with a non-constant electric field

    International Nuclear Information System (INIS)

    Shah, K.S.; Lund, J.C.; Olschner, F.

    1990-01-01

    The development of improved semiconductor radiation detectors would be facilitated by a quantitative model that predicts the performance of these detectors as a function of material characteristics and device operating parameters. An accurate prediction of the pulse height spectrum from a radiation detector can be made if both the noise and the charge collection properties of the detector are understood. The noise characteristics of semiconductor radiation detectors have been extensively studied. The effect of noise can be closely simulated by convoluting the noise-free pulse height spectrum with a Gaussian function. Distortion of semiconductor detector's pulse height spectrum from charge collection effects is more complex than the effects of noise and is more difficult to predict. To compute these distortions it is necessary to know how the charge collection efficiency η varies as a function of position within the detector x. These effects are shown. This problem has been previously solved for planar detectors with a constant electric field, for the case of spherical detectors, and for coaxial detectors. In this paper the authors describe a more general solution to the charge collection problem which includes the case of a non-constant electric field in a planar geometry

  5. Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

    International Nuclear Information System (INIS)

    Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

    2012-01-01

    Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

  6. Optical characterization of wide-gap detector-grade semiconductors

    International Nuclear Information System (INIS)

    Elshazly, E.S.

    2011-01-01

    Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd 1-x Zn x Te, x∼0.1) and Thallium Bromide (Tl Br), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and Tl Br as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064 nm wavelength and 7 ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300 K to 110 K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (Tl Br) and compared with the results for cadmium zinc telluride (CZT) in

  7. Study on Characteristic of CdZnTe Semiconductor Detectors for Alpha Particle Measurement

    International Nuclear Information System (INIS)

    Kang, Sang Mook; Ha, Jang Ho; Kim, Yong Kyun; Park, Se Hwan; Kim, Han Soo; Chung, Chong Eun

    2005-01-01

    The last 2-3 years have seen continued effort in the development of a wide band gap room-temperature compound semiconductor devices aimed principally at photon imaging covering hard X-rays, synchrotrons, and low to medium energy gamma rays. Especially, among the semiconductor materials of a wide band gap, CdZnTe(CZT) has commonly used X-ray and gammaray detection applications because of the opportunity to achieve and excellent spectral and spatial resolution. It has recently been demonstrated that CZT can be used as an ancillary detector with the ability to detect both alpha particles and X-ray at room temperature. CZT detectors are relatively inexpensive compared with some silicon detectors, and are priced about the same as amorphous silicon and photodiodes which are routinely used for charged particle detection. In this paper, we investigated the use of the CZT semiconductor material as an alpha particles detector

  8. Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

    Science.gov (United States)

    Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

    2015-09-01

    In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

  9. Semiconductor scintillator detector for gamma radiation; Detector cintilador semicondutor para radiacao gama

    Energy Technology Data Exchange (ETDEWEB)

    Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S., E-mail: ftvdl@ufrgs.br, E-mail: borges@ufrgs.br, E-mail: jorge.zabadal@ufrgs.br [Universidade Federal do Rio Grande do Sul (GENUC/DEMEC/UFRGS), Porto Alegre, RS (Brazil). Grupo de Estudos Nucleares. Departamento de Engenharia Mecanica

    2015-07-01

    Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

  10. NMR and computational study of Ba8CuxGe46-x clathrate semiconductors

    International Nuclear Information System (INIS)

    Chen, Jing-Han; Sirusi Arvij, Ali; Zheng, Xiang; Rodriguez, Sergio Y.; Ross, Joseph H.

    2014-01-01

    Highlights: • Quadrupole NMR with first-principles calculations probes local site preferences. • Cu/Ge ratio is clarified vs. the ideal Zintl composition. • Modified Becke–Johnson exchange potential agrees well with NMR Knight shifts. - Abstract: Ba 8 Cu x Ge 46-x is a type-I clathrate material that forms as a semiconductor in a narrow composition range corresponding to the electron-balanced Zintl composition, with x = 5.3. We use NMR spectroscopy combined with ab initio electronic structure calculations to probe the electronic and structural behavior of these materials. Computational results based on a superstructure model for the atomic configuration of the alloy provide good agreement with the electric quadrupole-broadened NMR lineshapes. Modeling using the modified Becke–Johnson (TB-mBJ) exchange potential is also shown to agree well with experimental NMR Knight shifts. The results indicate that the Cu–Ge balance is the main factor determining the carrier density, within a narrow stability range near the ideal Zintl composition

  11. Instrumentation for characterizing materials and composed semiconductors for ionizing radiation detectors

    International Nuclear Information System (INIS)

    Paschoal, Arquimedes J.A.; Leite, Adolfo M.B.; Nazzre, Fabio V.B.; Santos, Luiz A.P.

    2007-01-01

    The purpose of this work is the development of instrumentation for characterizing some type of ionizing radiation detectors. Those detectors are being manufactured by the Nuclear Instrumentation Laboratory at CRCN/Recife and can be used both on photon beam and with particles. Such detectors consist of semiconductor material in the form of films generated by oxide growing or by means of semiconductor material deposition in a substrate. Those materials can be made of metals, semi-metals, composites or semiconductor polymers. Prior to expose those detectors to ionizing radiation, it must be physically and electrically characterized. In this intention it was developed an electromechanical system. An electrical circuit was built to measure the signal from the detector and another circuit to control the movement of four probes (4-points technique) by using a stepper motor and the micro stepping technique avoiding damage to the detector. This system can be of interest to researchers that work with a sort of semiconductor materials in the form of thin film and in nanotechnological processes aiming the design of radiation ionizing detectors. (author)

  12. Experimental investigation of energy resolution in a semiconductor detector (surface barrier and Si (Li) detector) in the detection of protons

    International Nuclear Information System (INIS)

    Nordborg, C.

    1974-05-01

    The action of electronic effects on the energy resolution of the detector is investigated. The results are applicable not only to protons but also to heavier charged particles. It should be possible to reach a resolution of about 6 to 7 keV for 10 MeV protons with electronic detectors. Magnetic spectrometers could achieve a resolution of 2 to 3 keV. It is convenient to use Peltier elements for cooling semiconductor spectrometers. (Auth.)

  13. New approach to calculate the true-coincidence effect of HpGe detector

    Energy Technology Data Exchange (ETDEWEB)

    Alnour, I. A., E-mail: aaibrahim3@live.utm.my, E-mail: ibrahim.elnour@yahoo.com [Department of Physics, Faculty of Pure and Applied Science, International University of Africa, 12223 Khartoum (Sudan); Wagiran, H. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai,Johor (Malaysia); Ibrahim, N. [Faculty of Defence Science and Technology, National Defence University of Malaysia, Kem Sungai Besi, 57000 Kuala Lumpur (Malaysia); Hamzah, S.; Elias, M. S. [Malaysia Nuclear Agency (MNA), Bangi, 43000 Kajang, Selangor D.E. (Malaysia); Siong, W. B. [Chemistry Department, Faculty of Resource Science & Technology, Universiti Malaysia Sarawak, 94300 Kota Samarahan, Sarawak (Malaysia)

    2016-01-22

    The corrections for true-coincidence effects in HpGe detector are important, especially at low source-to-detector distances. This work established an approach to calculate the true-coincidence effects experimentally for HpGe detectors of type Canberra GC3018 and Ortec GEM25-76-XLB-C, which are in operation at neutron activation analysis lab in Malaysian Nuclear Agency (NM). The correction for true-coincidence effects was performed close to detector at distances 2 and 5 cm using {sup 57}Co, {sup 60}Co, {sup 133}Ba and {sup 137}Cs as standard point sources. The correction factors were ranged between 0.93-1.10 at 2 cm and 0.97-1.00 at 5 cm for Canberra HpGe detector; whereas for Ortec HpGe detector ranged between 0.92-1.13 and 0.95-100 at 2 and 5 cm respectively. The change in efficiency calibration curve of the detector at 2 and 5 cm after correction was found to be less than 1%. Moreover, the polynomial parameters functions were simulated through a computer program, MATLAB in order to find an accurate fit to the experimental data points.

  14. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  15. Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code

    International Nuclear Information System (INIS)

    Sedlakova, K.; Sagatova, A.; Necas, V.; Zatko, B.

    2013-01-01

    The potential of silicon carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. The wide bandgap of SiC (3.25 eV for 4H-SiC polytype) compared to that for more conventionally used semiconductors, such as silicon (1.12 eV) and germanium (0.67 eV), makes SiC an attractive semiconductor for use in high dose rate and high ionization nuclear environments. The present work focused on the simulation of particle transport in SiC detectors of fast neutrons using statistical analysis of Monte Carlo radiation transport code MCNPX. Its possibilities in detector design and optimization are presented.(authors)

  16. Fe concentration dependence of tunneling magnetoresistance in magnetic tunnel junctions using group-IV ferromagnetic semiconductor GeFe

    Directory of Open Access Journals (Sweden)

    Kosuke Takiguchi

    2017-10-01

    Full Text Available Group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe is one of the most promising materials for spin injection/detection in Si and Ge. In this paper, we demonstrate a systematic study of tunneling magnetoresistance (TMR in magnetic tunnel junctions (MTJs composed of Fe/MgO/Ge1−xFex with various Fe concentrations (x = 0.065, 0.105, 0.140, and 0.175. With increasing x, the TMR ratio increases up to 1.5% when x≤ 0.105, and it decreases when x> 0.105. This is the first observation of the TMR ratio over 1% in MTJs containing a group-IV ferromagnetic semiconductor. With increasing x, while the Curie temperature of GeFe increases, the MgO surface becomes rougher, which is thought to be the cause of the upper limit of the TMR ratio. The quality of the MgO layer on GeFe is an important factor for further improvement of TMR in Fe/MgO/GeFe MTJs.

  17. Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

    International Nuclear Information System (INIS)

    Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

    2006-01-01

    We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

  18. Ab-initio calculation of ZnGeAs{sub 2} semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, S. K., E-mail: susanta96@gmail.com; Kumar, V., E-mail: susanta96@gmail.com [Department of Electronics Engineering, Indian School of Mines, Dhanbad 826004 (India)

    2014-04-24

    The structural, electronic, optical and elastic properties of ZnGeAs{sub 2} semiconductor have been investigated using pseudopotential plane wave method within the density functional theory (DFT). The optimized lattice constants, energy gap and crystal field splitting parameter are calculated. The optical properties such as dielectric function, optical reflectivity,, extinction coefficient, absorption spectra, refractive index and electron energy loss spectrum have been studied. The values of bulk modulus (B), elastic constants (C{sub ij}), Young’s modulus (Y), Zener anisotropic factor (A), Poisson’s ratio (ν) and Debye temperature (Θ{sub D}) have been calculated. The calculated values of all these parameters are compared with the available experimental values and the values reported by different workers. A fairly good agreement has been found between them.

  19. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    International Nuclear Information System (INIS)

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

  20. Temperature distribution model for the semiconductor dew point detector

    Science.gov (United States)

    Weremczuk, Jerzy; Gniazdowski, Z.; Jachowicz, Ryszard; Lysko, Jan M.

    2001-08-01

    The simulation results of temperature distribution in the new type silicon dew point detector are presented in this paper. Calculations were done with use of the SMACEF simulation program. Fabricated structures, apart from the impedance detector used to the dew point detection, contained the resistive four terminal thermometer and two heaters. Two detector structures, the first one located on the silicon membrane and the second one placed on the bulk materials were compared in this paper.

  1. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

    International Nuclear Information System (INIS)

    Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

    2012-01-01

    Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

  2. GeSn Based Near and Mid Infrared Heterostructure Detectors

    Science.gov (United States)

    2018-02-07

    prestigious journals. 15.  SUBJECT TERMS Plasmonic Enhancement, Metal Nanostructures, CMOS, Photodetectors, Germanium-Tin Diode, IR Focal Plane Array...following features: (1) ease of manufacture in a foundry via a simple epitaxial structure, (2) end- fire coupling into on-chip transparent Ge or Si

  3. Dual-Energy Semiconductor Detector of X-rays and Gamma Radiation

    Directory of Open Access Journals (Sweden)

    Brodyn, M.S.

    2014-03-01

    Full Text Available Analysis of the major types of ionizing radiation detectors, their advantages and disadvantages are presented. Application of ZnSe-based semiconductor detector in high temperature environment is substantiated. Different forms of ZnSe-based detector samples and double-crystal scheme for registration of X- and gamma rays in a broad energy range were used . Based on the manufactured simulator device, the study sustains the feasibility of the gamma quanta recording by a high-resistance ZnSe-based detector operating in a perpulse mode.

  4. Background recognition in Ge detectors by pulse shape analysis

    International Nuclear Information System (INIS)

    Petry, F.; Piepke, A.; Strecker, H.; Klapdor-Kleingrothaus, H.V.; Balysh, A.; Belyaev, S.T.; Demehin, A.; Gurov, A.; Kondratenko, I.; Kotel'nikov, D.; Lebedev, V.I.; Landis, D.; Madden, N.; Pehl, R.H.

    1993-01-01

    A method of event identification that distinguishes single and multiple-site events by determining the number of interactions in a high purity germanium detector is reported. The selectivity of the method has been experimentally verified. (orig.)

  5. Rejecting escape events in large volume Ge detectors by a pulse shape selection procedure

    International Nuclear Information System (INIS)

    Del Zoppo, A.; Agodi, C.; Alba, R.; Bellia, G.; Coniglione, R.; Loukachine, K.; Maiolino, C.; Migneco, E.; Piattelli, P.; Santonocito, D.; Sapienza, P.

    1993-01-01

    The dependence of the response to γ-rays of a large volume Ge detector on the interval width of a selected initial rise pulse slope is investigated. The number of escape events associated with a small pulse slope is found to be greater than the corresponding number of full energy events. An escape event rejection procedure based on the observed correlation between energy deposition and pulse shape is discussed. Such a procedure seems particularly suited for the design of highly granular large volume Ge detector arrays. (orig.)

  6. Electronic, elastic and optical properties of ZnGeP{sub 2} semiconductor under hydrostatic pressures

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, S.K.; Kumar, V., E-mail: vkumar52@hotmail.com

    2014-03-15

    The electronic, elastic and optical properties of zinc germanium phosphide, ZnGeP{sub 2}, semiconductor have been studied using local density approximation (LDA) method within the density functional theory (DFT). The lattice constants (a and c), band structure, density of states (DOS), bulk modulus (B) and pressure derivative of bulk modulus (B′) have been discussed. The value of pseudo-direct band gap (E{sub g}) at Γ point has been calculated. The pressure dependences of elastic stiffness coefficients (C{sub ij}), Zener anisotropy factor (A), Poisson's ratio (ν), Young modulus (Y) and shear modulus (G) have also been calculated. The ratio of B/G shows that that ZnGeP{sub 2} is ductile in nature. The optical properties have been discussed in detail under three different pressures in the energy range 0–22 eV. The calculated values of all parameters are compared with the available experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.

  7. A New Approach for Evaluating Charge Transport Properties of Semiconductor Detectors

    International Nuclear Information System (INIS)

    Kim, Kyung O; Kim, Jong Kyung; Kim, Soon Young; Ha, Jang Ho

    2009-01-01

    The semiconductor detectors (e.g., CdTe, CdZnTe, and HgI 2 ) have been widely used for radiation detection and medical imaging because of its various outstanding features such as excellent energy resolution, wide bandgap energy, room temperature operation, and so on. Unfortunately, the performance of these detectors is mainly limited by the charge transport properties of semiconductor, especially the mobility-lifetime products (i.e., (μτ) e and ((μτ) h ). Hence, the analysis on the mobility-lifetime products is very important for evaluating correct characteristics of semiconductor detectors. A commonly used method to analyze the mobilitylifetime products is based on their responses to α particle. However, the α particle method cannot evaluate the ((μτ)h product in many cases, because a semiconductor detector operating at positive bias voltages often yields the energy spectrum without the peaks. This method is also known to be very sensitive to the experimental conditions as well as surface conditions of the detector. In this study, a new approach with gamma-ray instead of α particle was carried out to solve the determination difficulty of the ((μτ) h product with common method. The special relation between the two mobility-lifetime products, which we call the 'Nural equation', was also developed to simply obtain each parameter based on Hecht equation

  8. Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties.

    Science.gov (United States)

    Sims, Patrick E; Chizmeshya, Andrew V G; Jiang, Liying; Beeler, Richard T; Poweleit, Christian D; Gallagher, James; Smith, David J; Menéndez, José; Kouvetakis, John

    2013-08-21

    In this work, we extend our strategy previously developed to synthesize functional, crystalline Si(5-2y)(AlX)y {X = N,P,As} semiconductors to a new class of Ge-III-V hybrid compounds, leading to the creation of (InP)(y)Ge(5-2y) analogues. The compounds are grown directly on Ge-buffered Si(100) substrates using gas source MBE by tuning the interaction between Ge-based P(GeH3)3 precursors and In atoms to yield nanoscale "In-P-Ge3" building blocks, which then confer their molecular structure and composition to form the target solids via complete elimination of H2. The collateral production of reactive germylene (GeH2), via partial decomposition of P(GeH3)3, is achieved by simple adjustment of the deposition conditions, leading to controlled Ge enrichment of the solid product relative to the stoichiometric InPGe3 composition. High resolution XRD, XTEM, EDX, and RBS indicate that the resultant monocrystalline (InP)(y)Ge(5-2y) alloys with y = 0.3-0.7 are tetragonally strained and fully coherent with the substrate and possess a cubic diamond-like structure. Molecular and solid-state ab initio density functional theory (DFT) simulations support the viability of "In-P-Ge3" building-block assembly of the proposed crystal structures, which consist of a Ge parent crystal in which the P atoms form a third-nearest-neighbor sublattice and "In-P" dimers are oriented to exclude energetically unfavorable In-In bonding. The observed InP concentration dependence of the lattice constant is closely reproduced by DFT simulation of these model structures. Raman spectroscopy and ellipsometry are also consistent with the "In-P-Ge3" building-block interpretation of the crystal structure, while the observation of photoluminescence suggests that (InP)(y)Ge(5-2y) may have important optoelectronic applications.

  9. Study on effects of gamma-ray irradiation on TlBr semiconductor detectors

    International Nuclear Information System (INIS)

    Matsumura, Motohiro; Watanabe, Kenichi; Yamazaki, Atsushi; Uritani, Akira; Kimura, Norihisa; Nagano, Nobumichi; Hitomi, Keitaro

    2016-01-01

    Radiation hardness of thallium bromide (TlBr) semiconductor detectors to 60 Co gamma-ray irradiation was evaluated. The energy spectra and μτ products of electrons were measured to evaluate the irradiation effects. No significant degradation of spectroscopic performance of the TlBr detector for 137 Cs gamma-rays was observed up to 45 kGy irradiation. Although the μτ products of electrons in the TlBr detector slightly decreased, position of the photo-peak was stable without significant degradation after the gamma-ray irradiation. We confirmed that the TlBr semiconductor detector has a high tolerance for gamma-ray irradiation at least up to 45 kGy. (author)

  10. Prototype of the stacked CdZnTe semiconductor detector for 16N measurement

    International Nuclear Information System (INIS)

    Nishizawa, Hiroshi; Inujima, Hiroshi; Fujiwara, Hirotsugu; Nakamura, Hiroaki

    2001-01-01

    Prototype of the Stacked CdZnTe Semiconductor Detector for Measurement The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13 MeV γ-ray from 16 N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137 Cs and 60 Co, and 16 N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident γ-ray energy and its intensity ratio was identified and that the energy of 6 MeV γ-ray could be measured by the prototype of the stacked detector. (author)

  11. Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

    International Nuclear Information System (INIS)

    Rau, E. I.; Orlikovskiy, N. A.; Ivanova, E. S.

    2012-01-01

    A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1–50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

  12. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  13. Manufacturing Techniques of Ge(Li) Gamma radiation detectors

    International Nuclear Information System (INIS)

    Marti, G.V.; Gimenez, C.R.

    1981-01-01

    A method is shown, to make detectors of germanium-lithium with a size up to 50 cu cm. A detailed description of the techniques used in the different stages of the process is shown as well as the results attained with several detectors. Resolutions of 2,7 and 5,5 keV and efficiencies between 3 and 8% for an energy of 1,33 MeV have been attained. An attempt was made to relate said parameters with the difficulties found during the fabrication of the detectors and the features of the original material, with the purpose to set criterions that allow to acknowledge the crystals more easily compensatable, and when finished would yield the best resolution and efficiency. A summary of the most important features and construction details is given showing some spectrum of the best crystals. Finally the results attained are discussed and some of the conclusions are extracted. (V.B.) [es

  14. Study of semiconductor detectors applied to diagnostic X-ray

    International Nuclear Information System (INIS)

    Salgado, Cesar Marques

    2003-08-01

    This work aims an evaluation of procedures for photons spectrum determination, produced by a X ray tube, normally used for medical diagnoses which operation voltage ranges from 20 to 150 kVp, to allow more precise characterization of the photon beam. The use of spectrum analysis will contribute to reduce the uncertainty in the ionization camera calibrations. For this purpose, two kind of detectors were selected, a Cadmium Zinc Telluride (CZT) and a planar HPGe detector. The X ray interaction with the detector's crystal produces, by electronic processes, a pulse high distribution as an output, which is no the true photon spectrum, due to the presence of K shell escape peaks, Compton scattering and to the fact that the detectors efficiency diminish rapidly with the increase of the photon energy. A detailed analysis of the contributing factors to distortions in the spectrum is necessary and was performed by Monte Carlo calculation with the MCNP 4B computer code. In order to determine the actual photon spectrum for a X ray tube a spectra stripping procedure is described for the HPGe detector. The detector's response curves, determined by the Monte Carlo calculation, were compared to the experimental ones, for isotropic point sources. For the methodology validation, stripped spectra were compared to the theoretical ones, for the same X ray tube's settings, for a qualitative evaluation. The air kerma rate calculated with the photon spectra were compared to the direct measurement using an ionization chamber, for a quantitative evaluation. (author)

  15. Characterisation of semiconductor materials for ionising radiation detectors

    International Nuclear Information System (INIS)

    Vaitkus, J.; Gaubas, E.; Jasinskaite, R.; Juska, G.; Kazukauskas, V.; Puras, R.; Rahman, M.; Sakalauskas, S.; Smith, K.

    2002-01-01

    Methods for the detection and characterisation of semiconductor material parameters and inhomogeneities are analysed. The peculiarities of different 'classical' material and structure characterisation methods are discussed. The methods of lifetime and surface recombination mapping and electric field distribution in the samples are presented. Some results of investigations of GaAs, Si and SiC are used for the characterisation of different peculiarities or methods

  16. Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

    Science.gov (United States)

    Ha, Jang Ho; Kim, Han Soo

    2013-11-01

    The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation. Copyright © 2013 Elsevier Ltd. All rights reserved.

  17. SiGe Intersubband Detectors for Terahertz Communication and Sensing

    National Research Council Canada - National Science Library

    Kolodzey, James

    2003-01-01

    We report on the design and fabrication of THz detectors based on silicon germanium nanostructures grown by MBE to obtain intersubband transitions in the energy range from 4.1 meV to 4.1 meV (1 to 10 THz...

  18. Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

    2017-01-30

    Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

  19. Deep-water gamma-spectrometer based on HP(Ge) detector

    International Nuclear Information System (INIS)

    Sokolov, A.; Danengirsh, S.; Popov, S.; Pchelincev, A; Gostilo, V.; Kravchenko, S.; Shapovalov, V.; Druzhinin, A.

    1995-01-01

    Full text: For radionuclide monitoring of the sea bottom near underwater storage of high active waste of nuclear industries and near places of accidents with nuclear submarines the spectrometers of gamma-radiation, which allow to carry out the measurements on the great depth, are needed. Usually, these problems are solved with devices, which are cast down into the water, using the rope, and transmit the signals on the surface by the cable. However, the depth of immersion is limited by this construction and often the conditions of measurement are complicated. The deep water gamma-spectrometer based on HP(Ge) detector for the measurement on the depth up to 3000 m is developed. The spectrometer is completely autonomic and is put up in the selected place, using the manipulator of a deep-water apparatus. The spectrometer is created in two cylindrical cases with 170 mm diameter and 1100 mm length, bearing the high hydrostatic pressure. The part of the case around the detector is created from titanium and has especial construction with a thin wall for increasing the efficiency of registration in the region of low-energy gamma-radiation. The cooling of the semiconductor detector is provided by a coolant which supports the working temperature of the detector during more than 24 hours. The electronic system of the spectrometer includes high voltage supply f or the detector, preamplifier, analog processor, analog-digital converter and a device for collecting and storing information in flash memory. The power supply of the spectrometer is provided by a battery of accumulators, which can be recharged on the surface. The programming of the processor is carried out before immersion by connecting the spectrometer to personal computer using standard interface RS-232. During 24 hours the spectrometer provides registration of 16 spectrums each in 4096 channels. The reading of the information by the computer is carried out after lifting up the spectrometer on the surface in the same

  20. Spectrometer based on the silicon semiconductor detectors for a study of the two charged particles correlation

    International Nuclear Information System (INIS)

    Krumsztein, Z.W.; Siemiarczuk, T.; Szawlowski, M.

    1974-01-01

    The spectrometer based on the silicon semiconductor detectors for a study of the correlation between two charged particles is described. The results of the time resolution and particles identification measurements are presented. The tests were performed in the proton beam of the JINR synchrocyclotron. (author)

  1. Search for strongly interacting massive particles using semiconductor detectors on the ground

    International Nuclear Information System (INIS)

    Derbin, A.V.; Egorov, A.I.; Bakhlanov, S.V.; Muratova, V.N.

    1999-01-01

    Using signals from recoil nucleus in semiconductor detectors, search for strongly interacting massive particles, as a possible candidate for dark matter, is continued. Experimental installation and the experimental results are given. New limits on the possible masses and cross sections of strongly interacting massive particles are presented [ru

  2. Improvements in γ-ray reconstruction with positive sensitive Ge detectors using the backtracking method

    International Nuclear Information System (INIS)

    Milechina, L.; Cederwall, B.

    2003-01-01

    Gamma-ray tracking, a new detection technique for nuclear spectroscopy, requires efficient algorithms for reconstructing the interaction paths of multiple γ rays in a detector volume. In the present work, we discuss the effect of the atomic electron momentum distribution in Ge as well as employment of different types of figure-of-merit within the context of the so called backtracking method

  3. Measurements and simulations of the responses of the cluster Ge detectors to gamma rays

    International Nuclear Information System (INIS)

    Hara, Kaoru Y.; Goko, Shinji; Harada, Hideo; Hirose, Kentaro; Kimura, Atsushi; Kin, Tadahiro; Kitatani, Fumito; Koizumi, Mitsuo; Nakamura, Shoji; Toh, Yosuke

    2013-01-01

    Responses of cluster Ge detectors have been measured with standard γ-ray sources and the 35 Cl(n,γ) 36 Cl reaction in ANNRI at J-PARC/MLF. Experimental results and simulations using the EGS5 code are compared. (author)

  4. X-ray escape effects in Si, Ge, and NaI detectors

    International Nuclear Information System (INIS)

    Brunner, G.

    1989-01-01

    A 3-parameter representation of the type x = K 1 [1 -L(ln(1 + 1/L))] together with L = K 2 E K 3 is recommended for the escape to parent peak ratio. Parameter values are provided for Si, Ge, and NaI detectors. Scattering, which has been neglected up to now, is included. (author)

  5. Precision half-life measurement of .sup.140 La with Ge-detector

    Czech Academy of Sciences Publication Activity Database

    Adam, Jindřich; Belov, A. G.; Brandt, R.; Chaloun, P.; Honusek, Milan; Kalinnikov, V. G.; Krivopustov, M. I.; Kulakov, B. A.; Langrock, E. J.; Pronskikh, V. S.; Sosnin, A. N.; Stegailov, V. I.; Tsoupko-Sitnikov, V. M.; Wan, J. S.; Westmeier, W.

    2002-01-01

    Roč. 187, - (2002), s. 419-426 ISSN 0168-583X R&D Projects: GA AV ČR KSK1048102 Keywords : radioastive nuclei * Ge-detectors * half-life measurements Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.158, year: 2002

  6. Experimental confirmation of a new semiconductor detector principle

    International Nuclear Information System (INIS)

    Kemmer, J.; Lutz, G.; Schuster, K.; Sterzik, M.; Strueder, L.; Prechtel, U.; Ziemann, T.

    1990-01-01

    A new detector-amplification principle proposed by Kemmer and Lutz in 1986 has been experimentally verified. Outstanding features of this device are the built-in amplification, the signal charge storage capability and the possibility of repeated non-destructive readout. The device was used for detection of X-rays from a 241 Am and from an 55 Fe source. Very low noise figures (σ=30 electrons corresponding to an energy resolution of FWHM=250 eV at 6 keV energy) have been obtained at room temperature. Various applications of the structure either as detector or as purely electronic element are possible. One of the most intriguing is the use as a pixel detector with random access non-destructive readout. This device may be operated at very low power, as only reading (of one single pixel at a time), not storing, consumes power. Further options of the device are fast clearing, gating and variation of the pixel size during readout. The latter property can be used to drastically increase the readout speed compared to more standard two dimensional devices as e.g. CCD detectors, as one may restrict the high density readout to regions of interest determined beforehand by a coarse scan of the whole detector. An alternative use of the device is as an analog or digital memory, or as a simple transistor by a coarse scan of the whole detector. An alternative use of the device is as an analog or digital memory, or as a simple transistor with drastically reduced parasitic capacitances. Possible further developments are the combination with a novel three dimensional analog storage device which may either be used as a detector with built-in storage of several charge images or as a three-dimensional analog memory. (orig.)

  7. Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

    Science.gov (United States)

    McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.; McNeil, Walter J.; Solomon, Clell J.; Patterson, Eric L.; Bellinger, Steven L.

    2010-12-21

    Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

  8. On the operation of a cryostat for Ge(Li) detector

    International Nuclear Information System (INIS)

    Donde, A.L.; L'vov, A.N.

    1974-01-01

    Operating experience with cryostats for Ge(Li) detectors developed at the FTI of the Academy of Science of the Ukrainian SSR, and used in several laboratories for 5 years is reported. It is shown that the spectrometric properties of all cryostat-mounted detectors operating since 1969 have not been affected and up to now the detectors are operating successfully. Nitrogen consumption has not increased and is at a level of 0.5 l/d. During five-year continuous operation the cryostat pressure has varied from 6.10 -7 to 8.10 -6 torr

  9. Testing the Ge Detectors for the MAJORANA DEMONSTRATOR

    Science.gov (United States)

    Xu, W.; Abgrall, N.; Aguayo, E.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Combs, D. C.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Efremenko, Yu.; Egorov, V.; Ejiri, H.; Elliott, S. R.; Fast, J. E.; Finnerty, P.; Fraenkle, F. M.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guiseppe, V. E.; Gusev, K.; Hallin, A. L.; Hazama, R.; Hegai, A.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Keeter, K. J.; Kidd, M. F.; Kochetov, O.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Loach, J. C.; MacMullin, J.; MacMullin, S.; Martin, R. D.; Meijer, S.; Mertens, S.; Nomachi, M.; Orrell, J. L.; O'Shaughnessy, C.; Overman, N. R.; Phillips, D. G.; Poon, A. W. P.; Pushkin, K.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Ronquest, M. C.; Schubert, A. G.; Shanks, B.; Shima, T.; Shirchenko, M.; Snavely, K. J.; Snyder, N.; Suriano, A. M.; Thompson, J.; Timkin, V.; Tornow, W.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Yakushev, E.; Young, A. R.; Yu, C.-H.; Yumatov, V.

    High purity germanium (HPGe) crystals will be used for the MAJORANA DEMONSTRATOR, where they serve as both the source and the detector for neutrinoless double beta decay. It is crucial for the experiment to understand the performance of the HPGe crystals. A variety of crystal properties are being investigated, including basic properties such as energy resolution, efficiency, uniformity, capacitance, leakage current and crystal axis orientation, as well as more sophisticated properties, e.g. pulse shapes and dead layer and transition layer distributions. In this talk, we will present our measurements that characterize the HPGe crystals. We will also discuss the our simulation package for the detector characterization setup, and show that additional information can be extracted from data-simulation comparisons.

  10. On the Theory of Compensation in Lithium drifted Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A

    1969-04-15

    The lithium ion drift method produces detectors with a highly but not perfectly compensated intrinsic region. The amount of fixed space charge left in the depleted layer and its dependence on drift and clean-up parameters is of great practical interest. The imperfect compensation is mainly due to the presence in the depletion layer of thermally generated electron-hole pairs swept apart by the voltage applied to the detector during drift. A theoretical model is developed which takes into account the influence on the fixed space charge of mobile carrier generation and recombination. When recombination of free electrons and holes is negligible the theory predicts the formation of linear space charge gradients. When recombination is strong a constant space charge throughout a large part of the compensated layer may result. The theoretical calculations are compared with experimental findings. The influence of space charge on detector performance is discussed.

  11. Cryogenic Semiconductor Detectors: Simulation of Signal Formation & Irradiation Beam Test

    CERN Document Server

    AUTHOR|(CDS)2091318; Stamoulis, G; Vavougios, D

    The Beam Loss Monitoring system of the Large Hadron Collider is responsible for the pro- tection of the machine from damage and for the prevention of a magnet quench. Near the interaction points of the LHC, in the triplet magnets area, the BLMs are sensitive to the collision debris, limiting their ability to distinguish beam loss signal from signal caused due to the collision products. Placing silicon & diamond detectors inside the cold mass of the mag- nets, in liquid helium temperatures, would provide significant improvement to the precision of the measurement of the energy deposition in the superconducting coil of the magnet. To further study the signal formation and the shape of the transient current pulses of the aforementioned detectors in cryogenic temperatures, a simulation application has been developed. The application provides a fast way of determining the electric field components inside the detectors bulk and then introduces an initial charge distribution based on the properties of the radiat...

  12. Experimental characterization of semiconductor-based thermal neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bedogni, R., E-mail: roberto.bedogni@lnf.infn.it [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Bortot, D.; Pola, A.; Introini, M.V.; Lorenzoli, M. [Politecnico di Milano, Dipartimento di Energia, via La Masa 34, 20156 Milano (Italy); INFN—Milano, Via Celoria 16, 20133 Milano (Italy); Gómez-Ros, J.M. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); CIEMAT, Av. Complutense 40, 28040 Madrid (Spain); Sacco, D. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); INAIL—DIT, Via di Fontana Candida 1, 00040 Monteporzio Catone (Italy); Esposito, A.; Gentile, A.; Buonomo, B. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Palomba, M.; Grossi, A. [ENEA Triga RC-1C.R. Casaccia, via Anguillarese 301, 00060 S. Maria di Galeria, Roma (Italy)

    2015-04-21

    In the framework of NESCOFI@BTF and NEURAPID projects, active thermal neutron detectors were manufactured by depositing appropriate thickness of {sup 6}LiF on commercially available windowless p–i–n diodes. Detectors with different radiator thickness, ranging from 5 to 62 μm, were manufactured by evaporation-based deposition technique and exposed to known values of thermal neutron fluence in two thermal neutron facilities exhibiting different irradiation geometries. The following properties of the detector response were investigated and presented in this work: thickness dependence, impact of parasitic effects (photons and epithermal neutrons), linearity, isotropy, and radiation damage following exposure to large fluence (in the order of 10{sup 12} cm{sup −2})

  13. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    CERN Document Server

    Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

    1999-01-01

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  14. Current problems in semiconductor detectors for high energy physics after particle irradiations

    International Nuclear Information System (INIS)

    Lazanu, Ionel

    2002-01-01

    The use of semiconductor materials as detectors in high radiation environments, as expected in future high energy accelerators or in space missions, poses severe problems in long-time operations, due to changes in the properties of the material, and consequently in the performances of detectors. This talk presents the major theoretical areas of current problems, reviews the works in this field and the stage of their understanding, including author's contributions The mechanisms of interaction of the projectile with the semiconductor, the production of primary defects, the physical quantities and the equations able to characterise and describe the radiation effects, and the equations of kinetics of defects are considered. Correlation between microscopic damage and detector performances and the possible ways to optimise the radiation hardness of materials are discussed. (author)

  15. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  16. Influence of backscattering on the spatial resolution of semiconductor X-ray detectors

    International Nuclear Information System (INIS)

    Hoheisel, M.; Korn, A.; Giersch, J.

    2005-01-01

    Pixelated X-ray detectors using semiconductor layers or scintillators as absorbers are widely used in high-energy physics, medical diagnosis, or non-destructive testing. Their good spatial resolution performance makes them particularly suitable for applications where fine details have to be resolved. Intrinsic limitations of the spatial resolution have been studied in previous simulations. These simulations focused on interactions inside the conversion layer. Transmitted photons were treated as a loss. In this work, we also implemented the structure behind the conversion layer to investigate the impact of backscattering inside the detector setup. We performed Monte Carlo simulations with the program ROSI (Roentgen Simulation) which is based on the well-established EGS4 algorithm. Line-spread functions of different fully implemented detectors were simulated. In order to characterize the detectors' spatial resolution, the modulation transfer functions (MTF) were calculated. The additional broadening of the line-spread function by carrier transport has been ignored in this work. We investigated two different detector types: a directly absorbing pixel detector where a semiconductor slab is bump-bonded to a readout ASIC such as the Medipix-2 setup with Si or GaAs as an absorbing semiconductor layer, and flat-panel detectors with a Se or a CsI converter. We found a significant degradation of the MTF compared to the case without backscattering. At energies above the K-edge of the backscattering material the spatial resolution drops and can account for the observed low-frequency drop of the MTF. Ignoring this backscatter effect might lead to misinterpretations of the charge sharing effect in counting pixel detectors

  17. The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

    International Nuclear Information System (INIS)

    Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

    2012-01-01

    Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

  18. CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS.

    Energy Technology Data Exchange (ETDEWEB)

    CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; KOHMAN, K.T.; JAMES, R.B.

    2007-05-04

    One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

  19. Development of large area silicon semiconductor detectors for use in the current mode

    CERN Document Server

    Ouyang Xia Opin; Li Zhen Fu; Zhang Guo Guang; Zhang Qi; Zhang Xia; Song Xian Cai; Jia Huan Yi; Lei Jian Hua; Sun Yuan Cheng

    2002-01-01

    Large area silicon semiconductor detectors for use in the current mode, with their dimensions of phi 40, phi 50 and phi 60 mm, their depletion thickness of 200-300 mu m, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, authors' large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use

  20. Preliminary report on the development of a high resolution PET camera using semiconductor detectors

    International Nuclear Information System (INIS)

    Kikuchi, Yohei; Ishii, Keizo; Yamazaki, Hiromichi; Matsuyama, Shigeo; Yamaguchi, Takashi; Yamamoto, Yusuke; Sato, Takemi; Aoki, Yasushi; Aoki, Kenichi

    2005-01-01

    We are developing a PET camera using small semiconductor detectors, whose resolution is equivalent to the physical limit of spatial resolution. First, a coincidence system of 16 Schottky CdTe detectors of 0.5 mm width obtained a resolution of <1 mm and it was confirmed that the Schottky CdTe detector is suitable for high resolution PET. Next, the performance of a pair of 32 channel CdTe arrays (1.2 mm width per channel) was investigated for the development of the prototype of high resolution PET. The time resolution between opposing detector pair was 13 ns (FWHM) when high voltage (700 V) was applied. The image of a 0.6 mm diameter point source was obtained in an experiment with opposing detector arrays using four channels, indicating that, a higher resolution can be achieved with the 32 channel CdTe array

  1. Temperature-induced assembly of semiconductor nanocrystals into fractal architectures and thermoelectric power properties in Au/Ge bilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Li Quanbao; Wang Jian; Jiao Zheng [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Wu Minghong, E-mail: mhwu@staff.shu.edu.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Shek, Chan-Hung; Lawrence Wu, C.M.; Lai, Joseph K.L. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Chen Zhiwen, E-mail: cnzwchen@yahoo.com.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

    2011-08-15

    Highlights: > Ge fractal architectures were achieved by temperature-induced assembly. > The appearance of fractal architectures influences the thermoelectric power. > But it has little effect on the resistivity. > The values of the superlocalization exponent were within 1.22 {<=} {xi} {<=} 1.29. > It was higher than expected for two-dimension fractal system. - Abstract: Fractal architectures of semiconductor nanocrystals were successfully achieved by temperature-induced assembly of semiconductor nanocrystals in gold/germanium (Au/Ge) bilayer films. New assessment strategies of fractal architectures are of fundamental importance in the development of micro/nano-devices. Temperature-dependent properties including resistivity and thermoelectric power (TEP) of Au/Ge bilayer films with self-similar fractal patterns were investigated in detail. Experimental results indicated that the microstructure of Au film plays an important role in the characteristics of Au/Ge bilayer films after annealing and the crystallization processes of amorphous Ge accompany by fractal formation of Ge nanocrystals via temperature-induced assembly. The appearance of fractal architectures has significantly influence on the TEP but little effect on the resistivity of the annealed bilayer film. By analysis of the data, we found that the values of superlocalization exponent are within 1.22 {<=} {xi} {<=} 1.29, which are higher than expected for two-dimension fractal systems. The results provided possible evidence for the superlocalization on fractal architectures in Au/Ge bilayer films. The TEP measurements are considered a more effective method than the conductivity for investigating superlocalization in a percolating system.

  2. X-ray measurement with Pin type semiconductor detectors

    International Nuclear Information System (INIS)

    Ramirez J, F.J.

    1999-01-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  3. Diffusion and drift of charges in semiconductor detectors

    International Nuclear Information System (INIS)

    Meidinger, N.

    1991-01-01

    For this analysis, a fully depleteable pn-CCD (a novel, energy and local resolution semiconductor using the drift chamber principle) has been tested for verification at different temperatures, photon energies, and drift times, including theoretical calculations. Experimental results are in good agreement with calculated data, and deviations (≤11%) have been understood to an extent that proposals can be made for improving the accuracy. Charge splitting has been found to be reduced in the case of reduced charge collecting areas, i.e. for example at lower temperatures, or with shorter drift times. This effect is also reduced in the case of larger charge collecting areas (pixels). With the given topology of the cell structure, the charge splitting can be much more strongly suppressed as compared to other X-ray CCD design types. (orig.) [de

  4. Physical characteristics of GE Senographe Essential and DS digital mammography detectors

    International Nuclear Information System (INIS)

    Ghetti, Caterina; Borrini, Adriano; Ortenzia, Ornella; Rossi, Raffaella; Ordonez, Pedro L.

    2008-01-01

    The purpose of this study was to investigate physical characteristics of two full field digital mammography (FFDM) systems (GE Senographe Essential and DS). Both are indirect conversion (x ray to light) a-Si flat panels coupled with a CsI(Tl) scintillator. The examined systems have the same pixel size (100 μm) but a different field of view: a conventional size 23x19.2 cm 2 and a large field 24x30.7 cm 2 , specifically designed to image large breasts. In the GE Senographe Essential model relevant improvements in flat panel design were implemented and new deposition tools for metal, a-Si, and CsI(Tl) were introduced by GE. These changes in detector design are expected to be beneficial for advanced applications such as breast tomosynthesis. The presampling modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were measured for a wide range of exposure (25-240 μGy) with a RQA-M2 technique (28 kVp with a Mo/Mo target/filter combination and 2 mm of additional aluminum filtration). At 1, 2, and at 4 lp/mm MTF is equal to 0.9, 0.76, and 0.46 for the conventional field detector and to 0.85, 0.59, and 0.24 for the large field detector. The latter detector exhibits an improved NNPS due to a lower electronic noise and a better DQE that reaches 60%. In addition a contrast-detail analysis was performed with CDMAM 3.4 phantom and CDCOM software: GE Senographe DS showed statistically significant poorer detection ability in comparison with the GE Senographe Essential. These results could have been expected, at least qualitatively, considering the relative DQE of the two systems

  5. Neutron-induced peaks in Ge detectors from evaporation neutrons

    International Nuclear Information System (INIS)

    Gete, E.; Measday, D.F.; Moftah, B.A.; Saliba, M.A.; Stocki, T.J.

    1997-01-01

    We have studied the peak shapes at 596 and 691 keV resulting from fast neutron interactions inside germanium detectors. We have used neutrons from a 252 Cf source, as well as from the 28 Si(μ - , nν), and 209 Bi(π - , xn) reactions to compare the peaks and to check for a dependence of peak shape on the incoming neutron energy. In our investigation, no difference between these three measurements has been observed. In a comparison of these peak shapes with other studies, we found similar results to ours except for those measurements using monoenergetic neutrons in which a significant variation with neutron energy has been observed. (orig.)

  6. Monte Carlo simulations of the particle transport in semiconductor detectors of fast neutrons

    International Nuclear Information System (INIS)

    Sedlačková, Katarína; Zaťko, Bohumír; Šagátová, Andrea; Nečas, Vladimír

    2013-01-01

    Several Monte Carlo all-particle transport codes are under active development around the world. In this paper we focused on the capabilities of the MCNPX code (Monte Carlo N-Particle eXtended) to follow the particle transport in semiconductor detector of fast neutrons. Semiconductor detector based on semi-insulating GaAs was the object of our investigation. As converter material capable to produce charged particles from the (n, p) interaction, a high-density polyethylene (HDPE) was employed. As the source of fast neutrons, the 239 Pu–Be neutron source was used in the model. The simulations were performed using the MCNPX code which makes possible to track not only neutrons but also recoiled protons at all interesting energies. Hence, the MCNPX code enables seamless particle transport and no other computer program is needed to process the particle transport. The determination of the optimal thickness of the conversion layer and the minimum thickness of the active region of semiconductor detector as well as the energy spectra simulation were the principal goals of the computer modeling. Theoretical detector responses showed that the best detection efficiency can be achieved for 500 μm thick HDPE converter layer. The minimum detector active region thickness has been estimated to be about 400 μm. -- Highlights: ► Application of the MCNPX code for fast neutron detector design is demonstrated. ► Simulations of the particle transport through conversion film of HDPE are presented. ► Simulations of the particle transport through detector active region are presented. ► The optimal thickness of the HDPE conversion film has been calculated. ► Detection efficiency of 0.135% was reached for 500 μm thick HDPE conversion film

  7. Measurement of nuclear activity with Ge detectors and its uncertainty

    International Nuclear Information System (INIS)

    Cortes P, C.A.

    1999-01-01

    The objective of this work is to analyse the influence magnitudes which affect the activity measurement of gamma transmitter isolated radioactive sources. They prepared by means of the gravimetric method, as well as, determining the uncertainty of such measurement when this is carried out with a gamma spectrometer system with a germanium detector. This work is developed in five chapters: In the first one, named Basic principles it is made a brief description about the meaning of the word Measurement and its implications and the necessaries concepts are presented which are used in this work. In the second chapter it is exposed the gravimetric method used for the manufacture of the gamma transmitter isolated radioactive sources, it is tackled the problem to determine the main influence magnitudes which affect in the measurement of their activity and the respective correction factors and their uncertainties are deduced. The third chapter describes the gamma spectrometry system which is used in this work for the measurement of the activity of isolated sources and also its performance and experimental arrangement that it is used. In the fourth chapter are applied the three previous items with the object of determining the uncertainty which would be obtained in the measurement of an isolated radioactive source elaborated with the gravimetric method in the experimental conditions less favourable predicted above the obtained results from the chapter two. The conclusions are presented in the fifth chapter and they are applied to establish the optimum conditions for the measurement of the activity of a gamma transmitter isolated radioactive source with a spectrometer with germanium detector. (Author)

  8. A spectrometer using semi-conductor detectors; study and applications (1963)

    International Nuclear Information System (INIS)

    Roux, G.

    1963-01-01

    The low average energy, 2.5 to 3.5 eV, required to produce one hole-electron pair in a semiconductor allows an accurate measurement of the energy of the ionizing particles. A high resolution spectrometer has been built using semiconductor detectors. The limit of resolution, due to electronics associated to the detector, to the detector itself and to the source of particles is studied here. The present practical limit of resolution of the spectrometer is 1700 elementary electric charges (full width at half maximum of a ray of a spectrum) or 6 keV in terms of energy lost by a particle in a silicon detector. The physical resolution usually obtained is 20 keV (0.33 per cent) with α particles of the 212 Bi (6.087 MeV). It depends a lot of the kind of detector used. Some results, concerning the background of the detectors and limit of measurements for low energies are given. Various applications are presented: spectrometry β, spectrometry γ and X, spectrometry of mixtures of α radioactive elements, collection of α spectra. (author) [fr

  9. An experimental study of antireflective coatings in Ge light detectors for scintillating bolometers

    Directory of Open Access Journals (Sweden)

    Mancuso M.

    2014-01-01

    Full Text Available Luminescent bolometers are double-readout devices able to measure simultaneously the phonon and the light yields after a particle interaction in the detector. This operation allows in some cases to tag the type of the interacting quantum, crucial issue for background control in rare event experiments such as the search for neutrinoless double beta decay and for interactions of particle dark matter candidates. The light detectors used in the LUCIFER and LUMINEU searches (projects aiming at the study of the double beta interesting candidates 82Se and 100Mo using ZnSe and ZnMoO4 scintillating bolometers consist of hyper-pure Ge thin slabs equipped with NTD thermistors. A substantial sensitivity improvement of the Ge light detectors can be obtained applying a proper anti-reflective coatings on the Ge side exposed to the luminescent bolometer. The present paper deals with the investigation of this aspect, proving and quantifying the positive effect of a SiO2 and a SiO coating and setting the experimental bases for future tests of other coating materials. The results confirm that an appropriate coating procedure helps in improving the sensitivity of bolometric light detectors by an important factor (in the range 20% – 35% and needs to be included in the recipe for the development of an optimized radio-pure scintillating bolometer.

  10. An experimental study of antireflective coatings in Ge light detectors for scintillating bolometers

    Science.gov (United States)

    Mancuso, M.; Beeman, J. W.; Giuliani, A.; Dumoulin, L.; Olivieri, E.; Pessina, G.; Plantevin, O.; Rusconi, C.; Tenconi, M.

    2014-01-01

    Luminescent bolometers are double-readout devices able to measure simultaneously the phonon and the light yields after a particle interaction in the detector. This operation allows in some cases to tag the type of the interacting quantum, crucial issue for background control in rare event experiments such as the search for neutrinoless double beta decay and for interactions of particle dark matter candidates. The light detectors used in the LUCIFER and LUMINEU searches (projects aiming at the study of the double beta interesting candidates 82Se and 100Mo using ZnSe and ZnMoO4 scintillating bolometers) consist of hyper-pure Ge thin slabs equipped with NTD thermistors. A substantial sensitivity improvement of the Ge light detectors can be obtained applying a proper anti-reflective coatings on the Ge side exposed to the luminescent bolometer. The present paper deals with the investigation of this aspect, proving and quantifying the positive effect of a SiO2 and a SiO coating and setting the experimental bases for future tests of other coating materials. The results confirm that an appropriate coating procedure helps in improving the sensitivity of bolometric light detectors by an important factor (in the range 20% - 35%) and needs to be included in the recipe for the development of an optimized radio-pure scintillating bolometer.

  11. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

    2009-09-07

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

  12. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    International Nuclear Information System (INIS)

    Guerra, P; Santos, A; Darambara, D G

    2009-01-01

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm 3 CdZnTe pixellated detector.

  13. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge

    Directory of Open Access Journals (Sweden)

    K. R. Simov

    2018-01-01

    Full Text Available Mn doping of group-IV semiconductors (Si/Ge is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.

  14. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

    Science.gov (United States)

    Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

    2018-01-01

    Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.

  15. Radiation damage measurements in room-temperature semiconductor radiation detectors

    CERN Document Server

    Franks, L A; Olsen, R W; Walsh, D S; Vizkelethy, G; Trombka, J I; Doyle, B L; James, R B

    1999-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI sub 2) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 sup 1 sup 0 p/cm sup 2 and significant bulk leakage after 10 sup 1 sup 2 p/cm sup 2. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5x10 sup 9 p/cm sup 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from a moderated fission spectrum of neutrons after fluences up to 10 sup 1 sup 0 n/cm sup 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particles at fluences up to 1.5x10 sup 1 sup 0 alpha/cm sup 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5x10 sup 9 alpha/cm sup 2. CT detectors show resolution...

  16. Nuclear Reactor Power Monitoring Using Silicon Carbide Semiconductor Radiation Detectors

    International Nuclear Information System (INIS)

    Thomas Blue; Don Miller

    2008-01-01

    To provide a perspective for our accomplishments, all of the sub-tasks in Task 1 (as they were identified in the proposal) are listed, and a brief description of the subtasks is given. Task 1--Define Generation IV Reactor Power Monitoring Requirements. Task 1.1--The power monitoring requirements for the IRIS and GT-MHR will be evaluated. Parameters considered will include maximum power level uncertainty, response time, etc. Task 1.2--The optimum locations for power monitors will be selected for both the IRIS and GT-MHR. Factors to be considered will include the power monitoring requirements defined in Task 1.1 as well as expected detector sensitivity and the presence of gamma ray background. Task 1.3--Other applications and opportunities offered by SiC power monitors will be evaluated. The prospects for on-line fault identification and diagnosis using pulse height and pulse shape analysis will be explored. The use of miniature SiC detectors to define axial, azimuthal, and radial flux profiles will be investigated

  17. Tracking in full Monte Carlo detector simulations of 500 GeV e+e- collisions

    International Nuclear Information System (INIS)

    Ronan, M.T.

    2000-01-01

    In full Monte Carlo simulation models of future Linear Collider detectors, charged tracks are reconstructed from 3D space points in central tracking detectors. The track reconstruction software is being developed for detailed physics studies that take realistic detector resolution and background modeling into account. At this stage of the analysis, reference tracking efficiency and resolutions for ideal detector conditions are presented. High performance detectors are being designed to carry out precision studies of e + e - annihilation events in the energy range of 500 GeV to 1.5 TeV. Physics processes under study include Higgs mass and branching ratio measurements, measurement of possible manifestations of Supersymmetry (SUSY), precision Electro-Weak (EW) studies and searches for new phenomena beyond their current expectations. The relatively-low background machine environment at future Linear Colliders will allow precise measurements if proper consideration is given to the effects of the backgrounds on these studies. In current North American design studies, full Monte Carlo detector simulation and analysis is being used to allow detector optimization taking into account realistic models of machine backgrounds. In this paper the design of tracking software that is being developed for full detector reconstruction is discussed. In this study, charged tracks are found from simulated space point hits allowing for the straight-forward addition of background hits and for the accounting of missing information. The status of the software development effort is quantified by some reference performance measures, which will be modified by future work to include background effects

  18. X-ray measurement with Pin type semiconductor detectors; Medicion de rayos X con detectores de semiconductor tipo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, Departamento de Electronica, C.P. 52045 Salazar, Estado de Mexico (Mexico)

    2000-07-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  19. Effect of trapping of charge carriers on the resolution of Ge(Li) detectors

    International Nuclear Information System (INIS)

    Venturini, Luzia

    1979-01-01

    In this work a measurement is described of the variation of the resolution of a Ge(Li) detector as a function of the position of irradiation of a collimated gamma-ray beam. Also the variation of the resolution has been measured as a function of the applied detector voltage, using a collimated and a non-collimated gamma-ray beam. The measurement indicate that in the process of charge collection loss of holes predominates and the best resolution is obtained in the middle of the compensated region. It has been verified that, in the case of a collimated gamma beam the detector resolution improves with increasing detector bias up to at least 5100 Volts. For a non-collimated gamma beam, however, the resolution reaches a constant value at about 4400 Volts. The dependence of resolution on the position of irradiation can be accounted for by introducing a local ionization factor different from the usual position independent Fano factor. (author)

  20. Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

    International Nuclear Information System (INIS)

    Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro; Nakai, Katsuhiko

    1998-01-01

    The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

  1. Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Nakai, Katsuhiko

    1998-08-01

    The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

  2. Semiconductor devices as track detectors in high energy colliding beam experiments

    International Nuclear Information System (INIS)

    Ludlam, T.

    1980-01-01

    In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems

  3. Design and test of a prototype silicon detector module for ATLAS Semiconductor Tracker endcaps

    International Nuclear Information System (INIS)

    Clark, A.G.; Donega, M.; D'Onofrio, M.

    2005-01-01

    The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes the design and layout of the module and present results of a limited prototype production, which has been extensively tested in the laboratory and testbeam. The module design was not finally adopted for series production because a dedicated forward hybrid layout was pursued

  4. Semiconductor devices as track detectors in high energy colliding beam experiments

    Energy Technology Data Exchange (ETDEWEB)

    Ludlam, T

    1980-01-01

    In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems.

  5. Method of quantitative analysis of fluorine in environmental samples using a pure-Ge detector

    International Nuclear Information System (INIS)

    Sera, K.; Terasaki, K.; Saitoh, Y.; Itoh, J.; Futatsugawa, S.; Murao, S.; Sakurai, S.

    2004-01-01

    We recently developed and reported a three-detector measuring system making use of a pure-Ge detector combined with two Si(Li) detectors. The efficiency curve of the pure-Ge detector was determined as relative efficiencies to those of the existing Si(Li) detectors and accuracy of it was confirmed by analyzing a few samples whose elemental concentrations were known. It was found that detection of fluorine becomes possible by analyzing prompt γ-rays and the detection limit was found to be less than 0.1 ppm for water samples. In this work, a method of quantitative analysis of fluorine has been established in order to investigate environmental contamination by fluorine. This method is based on the fact that both characteristic x-rays from many elements and 110 keV prompt γ-rays from fluorine can be detected in the same spectrum. The present method is applied to analyses of a few environmental samples such as tealeaves, feed for domestic animals and human bone. The results are consistent with those obtained by other methods and it is found that the present method is quite useful and convenient for investigation studies on regional pollution by fluorine. (author)

  6. A Response of coaxial Ge (Li) detector to the extended source of gamma radiation

    International Nuclear Information System (INIS)

    Coffou, E.; Knapp, V.; Petkovic, T.

    1980-01-01

    In measurements of the absolute source strength of extended source of γ radiation, two main limitations on the accuracy are dues to the difficulties in accounting for the self-absorption in the source and for geometrical dependence of detector efficiency. Two problems were separated by introduction of the average only energy dependent efficiency, which lends itself to calculational and experimental determination (to be reported), and the response of coaxial Ge(Li) detector to cylindrical extended source with self-absorption has been developed here to a reduced analytical form convenient gu numerical calculations. (author)

  7. Two gamma dose evaluation methods for silicon semiconductor detector

    International Nuclear Information System (INIS)

    Chen Faguo; Jin Gen; Yang Yapeng; Xu Yuan

    2011-01-01

    Silicon PIN diodes have been widely used as personal and areal dosimeters because of their small volume, simplicity and real-time operation. However, because silicon is neither a tissue-equivalent nor an air-equivalent material, an intrinsic disadvantage for silicon dosimeters is that a significant over-response occurs at low-energy region, especially below 200 keV. Using a energy compensation filter to flatten the energy response is one method overcoming this disadvantage. But for dose compensation method, the estimated dose depends only on the number of the detector pulses. So a weight function method was introduced to evaluate gamma dose, which depends on pulse number as well as its amplitude. (authors)

  8. Resistor-less charge sensitive amplifier for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pelczar, K., E-mail: krzysztof.pelczar@doctoral.uj.edu.pl; Panas, K.; Zuzel, G.

    2016-11-01

    A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

  9. Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

    1998-01-01

    Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

  10. The simulation of charge sharing in semiconductor X-ray pixel detectors

    CERN Document Server

    Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C

    2002-01-01

    Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

  11. Digital approach to high-resolution pulse processing for semiconductor detectors

    International Nuclear Information System (INIS)

    Georgiev, A.; Buchner, A.; Gast, W.; Lieder, R.M.

    1992-01-01

    A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs

  12. Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

    International Nuclear Information System (INIS)

    Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

    1992-01-01

    Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

  13. Digital approach to high-resolution pulse processing for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Georgiev, A [Sofia Univ. (Bulgaria); Buchner, A [Forschungszentrum Rossendorf (Germany); Gast, W; Lieder, R M [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Kernphysik; Stein, J [Target System Electronic GmbH, Solingen, (Germany)

    1992-08-01

    A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs.

  14. Development of radiation tolerant semiconductor detectors for the Super-LHC

    CERN Document Server

    Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

    2005-01-01

    The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

  15. Assessment of present and future large-scale semiconductor detector systems

    International Nuclear Information System (INIS)

    Spieler, H.G.; Haller, E.E.

    1984-11-01

    The performance of large-scale semiconductor detector systems is assessed with respect to their theoretical potential and to the practical limitations imposed by processing techniques, readout electronics and radiation damage. In addition to devices which detect reaction products directly, the analysis includes photodetectors for scintillator arrays. Beyond present technology we also examine currently evolving structures and techniques which show potential for producing practical devices in the foreseeable future

  16. Noise and optimum filtering in spectrometers with semiconductor detectors operating at elevated temperature

    International Nuclear Information System (INIS)

    Dabrowski, W.; Korbel, K.

    1983-01-01

    The importance of the excess noise in the semiconductor detectors operating at the elevated temperature is discussed. Under the assumption of a conventional CR-RC type filtration the variancy of the noise output is determined. The new term ''second noise-corner time constant'' was proposed. The expression for relative signal-to-noise ratio as the dependence on the noise as well as circuits time constants was derived. It was also presented in a graphical form. 12 refs., 6 figs. (author)

  17. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

    CERN Document Server

    Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

    2005-01-01

    The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

  18. Advanced far infrared detectors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1993-05-01

    Recent advances in photoconductive and bolometric semiconductor detectors for wavelength 1 mm > λ > 50 μm are reviewed. Progress in detector performance in this photon energy range has been stimulated by new and stringent requirements for ground based, high altitude and space-borne telescopes for astronomical and astrophysical observations. The paper consists of chapters dealing with the various types of detectors: Be and Ga doped Ge photoconductors, stressed Ge:Ga devices and neutron transmutation doped Ge thermistors. Advances in the understanding of basic detector physics and the introduction of modern semiconductor device technology have led to predictable and reliable fabrication techniques. Integration of detectors into functional arrays has become feasible and is vigorously pursued by groups worldwide

  19. The study of response of wide band gap semiconductor detectors using the Geant4

    Directory of Open Access Journals (Sweden)

    Hussain Riaz

    2014-01-01

    Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.

  20. Least square methods and covariance matrix applied to the relative efficiency calibration of a Ge(Li) detector

    International Nuclear Information System (INIS)

    Geraldo, L.P.; Smith, D.L.

    1989-01-01

    The methodology of covariance matrix and square methods have been applied in the relative efficiency calibration for a Ge(Li) detector apllied in the relative efficiency calibration for a Ge(Li) detector. Procedures employed to generate, manipulate and test covariance matrices which serve to properly represent uncertainties of experimental data are discussed. Calibration data fitting using least square methods has been performed for a particular experimental data set. (author) [pt

  1. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaolong; He, Yongning, E-mail: yongning@mail.xjtu.edu.cn; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping [Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

    2016-04-25

    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  2. Gamma-ray pulse height spectrum analysis on systems with multiple Ge detectors using spectrum summing

    Energy Technology Data Exchange (ETDEWEB)

    Killian, E.W. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1997-11-01

    A technique has been developed at the Idaho National Engineering Laboratory to sum high resolution gamma-ray pulse spectra from systems with multiple Ge detectors. Lockheed Martin Idaho Technologies Company operates a multi-detector spectrometer configuration at the Stored Waste Examination Pilot Plant facility which is used to characterize the radionuclide contents in waste drums destined for shipment to Waste Isolation Pilot Plant. This summing technique was developed to increase the sensitivity of the system, reduce the count times required to properly quantify the radio-nuclides and provide a more consistent methodology for combining data collected from multiple detectors. In spectrometer systems with multiple detectors looking at non homogeneous waste forms it is often difficult to combine individual spectrum analysis results from each detector to obtain a meaningful result for the total waste container. This is particularly true when the counting statistics in each individual spectrum are poor. The spectrum summing technique adds the spectra collected by each detector into a single spectrum which has better counting statistics than each individual spectrum. A normal spectral analysis program can then be used to analyze the sum spectrum to obtain radio-nuclide values which have smaller errors and do not have to be further manipulated to obtain results for the total waste container. 2 refs., 2 figs.

  3. Current applications of semiconductor x-ray detectors in chemical analysis

    International Nuclear Information System (INIS)

    Whitehead, N.E.

    1975-07-01

    In the last few years, semiconductor detectors have been used as X-ray detectors with great success, and the routine rapid accumulation of X-ray spectra is now possible. This review surveys the historical development of the detectors, the utilisation, and relative merits of various means of exciting the X-radiation from the elements in the sample, and compares the technique with other methods claiming to offer the capability of simultaneous multi-element analysis. It is concluded that it is of average sensitivity, but offers some advantages from its non-destructive nature, and in some cases its ability to offer information about the spatial distribution of elements in a sample. Other types of analysis may also be possible simultaneously. Sample preparation techniques are reviewed, especially techniques of manufacturing thin samples. An appendix contains details of the very wide variety of samples which have been analysed. More than 350 references are included. (auth.)

  4. Behaviour of semiconductor nuclear-particle detectors; Comportement des semi-conducteurs comme detecteurs de particules nucleaires; Povedenie detektorov yadernykh chastits na poluprovodnikakh; Propiedades de los detectores de particulas nucleares a base de semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Walter, F J; Dabbs, J W.T.; Roberts, L D [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    1962-04-15

    Experimental and theoretical studies of the behaviour of semiconductor nuclear-particle detectors have been carried out over the temperature range of 0.2{sup o}K to 300{sup o}K. A simple theoretical model for the detector behaviour, which is found to describe the observed behaviour over a wide range of parameters, is presented. The importance of semiconductor purity and bias voltage in connection with pulse height, pulse rise-time and detector area is discussed. Empirical studies of noise and energy resolution indicate that for alpha particles the smallest observed peak-widths are substantially larger than those expected on the basis of electrical noise from the detector and amplifier. Equivalent noise values of {<=} 3 keV full-width at half maximum (FWHM) have been found for a 40-mm{sup 2} silicon surface-barrier detector at 77{sup o}K. Semiconductor detectors exhibit a ''pulse-height defect'' for fission fragments. There is evidence that this defect is not caused by a ''dead layer''. If electric fields which are insufficient to insure complete ''collection'' are responsible for the defect, the necessary minimum field (at the surface) is > 3 x 10{sup 4} V/cm for fission fragments, as compared to the value of 2 x 10{sup 3} V/cm which is found necessary in the case of alpha particles in Ge and Si. Detailed considerations regarding pulse rise-time at the amplifier have shown that in high-resistivity material both the ''dielectric'' relaxation time and the resistance associated with the undepleted base material can play an important role. A quantative description of the effect of detector and amplifier parameters on the shapes and rise-times associated with the pulse are presented. The advantages and problems associated with the use of surface-barrier detectors in several unique low-temperature nuclear-alignment experiments are discussed. These experiments involved fission-fragment angular distributions and resolution of alpha-fine structure with long-term stability

  5. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system

    Science.gov (United States)

    Ghodsi, Hamed; Kaatuzian, Hassan

    2015-05-01

    In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiGe device physical design. Comparison of our new proposed device and the previously reported device is done by SILVACO TCAD software simulation and we have used previous experimentally reported data to confirm our software simulations. Our proposed modifications in device structural design show a present device responsivity improvement of about 10% from 1 to 1.1 A/W while the bandwidth improvement is about 218 GHz. The minimum noise equivalent power at detector output is increased by about 14.3% and finally power consumption per pixel at the maximum responsivity is decreased by about 5%.

  6. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system

    International Nuclear Information System (INIS)

    Ghodsi, Hamed; Kaatuzian, Hassan

    2015-01-01

    In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiGe device physical design. Comparison of our new proposed device and the previously reported device is done by SILVACO TCAD software simulation and we have used previous experimentally reported data to confirm our software simulations. Our proposed modifications in device structural design show a present device responsivity improvement of about 10% from 1 to 1.1 A/W while the bandwidth improvement is about 218 GHz. The minimum noise equivalent power at detector output is increased by about 14.3% and finally power consumption per pixel at the maximum responsivity is decreased by about 5%. (paper)

  7. Monte Carlo simulations for the optimisation of low-background Ge detector designs

    Energy Technology Data Exchange (ETDEWEB)

    Hakenmueller, Janina; Heusser, Gerd; Maneschg, Werner; Schreiner, Jochen; Simgen, Hardy; Stolzenburg, Dominik; Strecker, Herbert; Weber, Marc; Westernmann, Jonas [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg (Germany); Laubenstein, Matthias [Laboratori Nazionali del Gran Sasso, Via G. Acitelli 22, 67100 Assergi L' Aquila (Italy)

    2015-07-01

    Monte Carlo simulations for the low-background Ge spectrometer Giove at the underground laboratory of MPI-K, Heidelberg, are presented. In order to reduce the cosmogenic background at the present shallow depth (15 m w.e.) the shielding of the spectrometer includes an active muon veto and a passive shielding (lead and borated PE layers). The achieved background suppression is comparable to Ge spectrometers operated in much greater depth. The geometry of the detector and the shielding were implemented using the Geant4-based toolkit MaGe. The simulations were successfully optimised by determining the correct diode position and active volume. With the help of the validated Monte Carlo simulation the contribution of the single components to the overall background can be examined. This includes a comparison between simulated results and measurements with different fillings of the sample chamber. Having reproduced the measured detector background in the simulation provides the possibility to improve the background by reverse engineering of the passive and active shield layers in the simulation.

  8. Induced radioactivity in the forward shielding and semiconductor tracker of the ATLAS detector.

    Science.gov (United States)

    Bĕdajánek, I; Linhart, V; Stekl, I; Pospísil, S; Kolros, A; Kovalenko, V

    2005-01-01

    The radioactivity induced in the forward shielding, copper collimator and semiconductor tracker modules of the ATLAS detector has been studied. The ATLAS detector is a long-term experiment which, during operation, will require to have service and access to all of its parts and components. The radioactivity induced in the forward shielding was calculated by Monte Carlo methods based on GEANT3 software tool. The results show that the equivalent dose rates on the outer surface of the forward shielding are very low (at most 0.038 microSv h(-1)). On the other hand, the equivalent dose rates are significantly higher on the inner surface of the forward shielding (up to 661 microSv h(-1)) and, especially, at the copper collimator close to the beampipe (up to 60 mSv h(-1)). The radioactivity induced in the semiconductor tracker modules was studied experimentally. The module was activated by neutrons in a training nuclear reactor and the delayed gamma ray spectra were measured. From these measurements, the equivalent dose rate on the surface of the semiconductor tracker module was estimated to be LHC) operation and 10 d of cooling.

  9. A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors

    International Nuclear Information System (INIS)

    Pietrzyk, M.A.; Kowalski, B.J.; Orlowski, B.A.; Knoff, W.; Story, T.; Dobrowolski, W.; Slynko, V.E.; Slynko, E.I.; Johnson, R.L.

    2010-01-01

    In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV. (authors)

  10. Band structure of semiconductor compounds of Mg sub 2 Si and Mg sub 2 Ge with strained crystal lattice

    CERN Document Server

    Krivosheeva, A V; Shaposhnikov, V L; Krivosheev, A E; Borisenko, V E

    2002-01-01

    The effect of isotopic and unaxial deformation of the crystal lattice on the electronic band structure of indirect band gap semiconductors Mg sub 2 Si and Mg sub 2 Ge has been simulated by means of the linear augmented plane wave method. The reduction of the lattice constant down to 95 % results in a linear increase of the direct transition in magnesium silicide by 48%. The stresses arising under unaxial deformation shift the bands as well as result in splitting of degenerated states. The dependence of the interband transitions on the lattice deformation is nonlinear in this case

  11. Search for neutrinoless double beta decay of Ge-76 with the GERmanium Detector Array '' GERDA ''

    International Nuclear Information System (INIS)

    Brugnera, R.

    2009-01-01

    The study of neutrinoless double beta decay (DBD) is the most powerful approach to the fundamental question if the neutrino is a Majorana particle, i.e. its own anti-particle. The observation of neutrinoless DBD would not only establish the Majorana nature of the neutrino but also represent a determination of its effective mass if the nuclear matrix element is given. So far, the most sensitive results have been obtained with Ge-76, and the group of Klapdor-Kleingrothaus has made a claim of discovery. Future experiments have to reduce radioactive backgrounds to increase the sensitivity. '' GERDA '' is a new double beta-decay experiment which is currently under construction in the INFN Gran Sasso National Laboratory, Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of '' GERDA '' is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments, increasing the sensitive mass and reaching exposure of 100 kg yr. It be will discuss design, physics reach, and status of construction of '' GERDA '', and present results from various R efforts including long term stability of bare Ge diodes in cryogenic liquids, material screening, cryostat performance, detector segmentation, cryogenic precision electronics, safety aspects, and Monte Carlo simulations. (author)

  12. Evaluation of scintillators and semiconductor detectors to image three-photon positron annihilation for positron emission tomography

    International Nuclear Information System (INIS)

    Abuelhia, E.; Spyrou, N.M.; Kacperski, K.; College University, Middlesex Hospital, London

    2008-01-01

    Positron emission tomography (PET) is rapidly becoming the main nuclear imaging modality of the present century. The future of PET instrumentation relies on semiconductor detectors because of their excellent characteristics. Three-photon positron annihilation has been recently investigated as a novel imaging modality, which demands the crucial high energy resolution of semiconductor detector. In this work the evaluation of the NaI(Tl) scintillator and HPGe and CdZTe semiconductor detectors, to construct a simple three-photon positron annihilation scanner has been explored. The effect of detector and scanner size on spatial resolution (FWHM) is discussed. The characteristics: energy resolution versus count rate and point-spread function of the three-photon positron annihilation image profile from triple coincidence measurements were investigated. (author)

  13. Influence of the geometrical characteristics of an HpGe detector on its efficiency

    International Nuclear Information System (INIS)

    Vargas, M.J.; Timon, A.F.; Sanchez, D.P.

    2002-01-01

    Computer codes based on Monte Carlo calculations have been extensively developed for the computation of the efficiency in gamma-ray spectrometry. The errors in the specific parameters of the detector due to the lack of precise knowledge of its characteristics usually represent one of the most important sources of inaccuracy in this simulation technique. Influence of several detector parameters on the efficiency for a typical coaxial n-type HpGe detector is presented. Calculations of the full-energy peak efficiencies were performed by means of a Monte Carlo code in the range 122-1836 keV for several types of source configuration: point source, cellulose filter, and two different cylindrical boxes containing a solid matrix of SiO 2 . The detector parameters varied were the crystal diameter, crystal height, diameter of the internal core, and the position of the crystal with respect to the beryllium window. Significant deviations in the efficiency, depending on the source geometry and the photon energy, can be produced by varying only slightly some of the detector parameters. (author)

  14. Ballistic deficit correction methods for large Ge detectors-high counting rate study

    International Nuclear Information System (INIS)

    Duchene, G.; Moszynski, M.

    1995-01-01

    This study presents different ballistic correction methods versus input count rate (from 3 to 50 kcounts/s) using four large Ge detectors of about 70 % relative efficiency. It turns out that the Tennelec TC245 linear amplifier in the BDC mode (Hinshaw method) is the best compromise for energy resolution throughout. All correction methods lead to narrow sum-peaks indistinguishable from single Γ lines. The full energy peak throughput is found representative of the pile-up inspection dead time of the corrector circuits. This work also presents a new and simple representation, plotting simultaneously energy resolution and throughput versus input count rate. (TEC). 12 refs., 11 figs

  15. Simulation of drift dynamics of arbitrary carrier distributions in complex semiconductor detectors

    CERN Document Server

    De Castro Manzano, Pablo

    2014-01-01

    An extensible open-source C++ software for the simulation of elec- trons and holes drift in semiconductor detectors of complex geometries has been developed in order to understand transient currents and charge collection efficiencies of arbitrary charge distributions. The simulation is based on Ramo’s theorem formalism to obtain induced currents in the electrodes. Efficient open source C++ numerical libraries are used to ob- tain the electric and weighting field using finite-element methods and to simulate the carrier transport. A graphical user interface is also provided. The tool has already been proved useful to model laser induced transient currents

  16. Determination and stabilization of the altitude of an aircraft in space using semi-conductor detectors

    International Nuclear Information System (INIS)

    Gilly, L.

    1967-01-01

    The device studied in this report can be used as altimeter or as altitude stabilizer (B.F. number PV 100-107, March 23, 1967). It includes essentially a 'surface barrier' semiconductor detector which counts alpha particles of a radioactive source. Two sources are used corresponding to two possible utilizations of the device. This report describes experiences made in laboratory which comprises electronic tests and a physic study. Systematic analysis of experimental errors is made comparatively with aneroid altimeters. An industrial device project is given. (author) [fr

  17. Measurement of neutron flux distribution by semiconductor detector; merenje raspodele neutronskog fluksa poluprovodnickim detektorom

    Energy Technology Data Exchange (ETDEWEB)

    Obradovic, D; Bosevski, T [Institut za nuklearne nauke Boris Kidric, Vinca, Beograd (Yugoslavia)

    1964-07-01

    Application of semiconductor detectors for measuring neutron flux distribution is about 10 times faster than measurements by activation foils and demands significantly lower reactor power. Following corrections are avoided: mass of activation foils which influences the self shielding, nuclear decay during activity measurements; counter dead-time. It is possible to control the measured data during experiment and repeat measurements if needed. Precision of the measurement is higher since it is possible to choose the wanted statistics. The method described in this paper is applied for measurements at the RB reactor. It is concluded that the method is suitable for fast measurements but the activation analysis is still indispensable.

  18. The effect of dielectric constants on noble metal/semiconductor SERS enhancement: FDTD simulation and experiment validation of Ag/Ge and Ag/Si substrates.

    Science.gov (United States)

    Wang, Tao; Zhang, Zhaoshun; Liao, Fan; Cai, Qian; Li, Yanqing; Lee, Shuit-Tong; Shao, Mingwang

    2014-02-11

    The finite-difference time-domain (FDTD) method was employed to simulate the electric field distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation showed that noble metal/Ge had stronger SERS enhancement than noble metal/Si, which was mainly attributed to the different dielectric constants of semiconductors. In order to verify the simulation, Ag nanoparticles with the diameter of ca. 40 nm were grown on Ge or Si wafer (Ag/Ge or Ag/Si) and employed as surface-enhanced Raman scattering substrates to detect analytes in solution. The experiment demonstrated that both the two substrates exhibited excellent performance in the low concentration detection of Rhodamine 6G. Besides, the enhancement factor (1.3 × 10(9)) and relative standard deviation values (less than 11%) of Ag/Ge substrate were both better than those of Ag/Si (2.9 × 10(7) and less than 15%, respectively), which was consistent with the FDTD simulation. Moreover, Ag nanoparticles were grown in-situ on Ge substrate, which kept the nanoparticles from aggregation in the detection. To data, Ag/Ge substrates showed the best performance for their sensitivity and uniformity among the noble metal/semiconductor ones.

  19. Detection of secondary electrons with pixelated hybrid semiconductor detectors; Sekundaerelektronennachweis mit pixelierten hybriden Halbleiterdetektoren

    Energy Technology Data Exchange (ETDEWEB)

    Gebert, Ulrike Sonja

    2011-09-14

    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10{sup -5} mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm{sup 2} area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm{sup 2}. To achieve this, a new photocathode was mounted in a shorter distance to the detector. The

  20. Optimizing the design and analysis of cryogenic semiconductor dark matter detectors for maximum sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Pyle, Matt Christopher [Stanford Univ., CA (United States)

    2012-01-01

    In this thesis, we illustrate how the complex E- field geometry produced by interdigitated electrodes at alternating voltage biases naturally encodes 3D fiducial volume information into the charge and phonon signals and thus is a natural geometry for our next generation dark matter detectors. Secondly, we will study in depth the physics of import to our devices including transition edge sensor dynamics, quasi- particle dynamics in our Al collection fins, and phonon physics in the crystal itself so that we can both understand the performance of our previous CDMS II device as well as optimize the design of our future devices. Of interest to the broader physics community is the derivation of the ideal athermal phonon detector resolution and it's T3 c scaling behavior which suggests that the athermal phonon detector technology developed by CDMS could also be used to discover coherent neutrino scattering and search for non-standard neutrino interaction and sterile neutrinos. These proposed resolution optimized devices can also be used in searches for exotic MeV-GeV dark matter as well as novel background free searches for 8GeV light WIMPs.

  1. Modification of coaxial Ge/Li detector for low-energy gamma radiation

    International Nuclear Information System (INIS)

    Skrivankova, M.; Seda, J.

    1992-01-01

    A modification is described of a coaxial Ge/Li type ionizing radiation detector which makes possible the detection and spectrometry not only of medium- and high-energy gamma rays but also of low-energy (above 5 keV) X-rays and gamma rays. The modification consists in grinding down a thick diffuse layer of the face, which is subsequently etched in a mixture of nitric and hydrofluoric acids (ratio 5:2 to 1:5). Phosphorus or arsenic is subsequently implanted at an energy of 5 to 30 keV and in a dose of 10 14 to 10 15 ions/cm 2 . The detector is then drifted at 30 to 50 degC for 2 to 20 hours, encased in a cryostat, and submerged into liquid nitrogen. (Z.S.)

  2. Very Low-Power Consumption Analog Pulse Processing ASIC for Semiconductor Radiation Detectors

    International Nuclear Information System (INIS)

    Wessendorf, K.O.; Lund, J.C.; Brunett, B.A.; Laguna, G.R.; Clements, J.W.

    1999-01-01

    We describe a very-low power consumption circuit for processing the pulses from a semiconductor radiation detector. The circuit was designed for use with a cadmium zinc telluride (CZT) detector for unattended monitoring of stored nuclear materials. The device is intended to be battery powered and operate at low duty-cycles over a long period of time. This system will provide adequate performance for medium resolution gamma-ray pulse-height spectroscopy applications. The circuit incorporates the functions of a charge sensitive preamplifier, shaping amplifier, and peak sample and hold circuit. An application specific integrated circuit (ASIC) version of the design has been designed, built and tested. With the exception of the input field effect transistor (FET), the circuit is constructed using bipolar components. In this paper the design philosophy and measured performance characteristics of the circuit are described

  3. Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

    International Nuclear Information System (INIS)

    Fadida, S.; Shekhter, P.; Eizenberg, M.; Cvetko, D.; Floreano, L.; Verdini, A.; Nyns, L.; Van Elshocht, S.; Kymissis, I.

    2014-01-01

    In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al 2 O 3 layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

  4. NMR and computational study of Ba{sub 8}Cu{sub x}Ge{sub 46-x} clathrate semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jing-Han, E-mail: jhchen@tamu.edu; Sirusi Arvij, Ali; Zheng, Xiang; Rodriguez, Sergio Y.; Ross, Joseph H.

    2014-04-01

    Highlights: • Quadrupole NMR with first-principles calculations probes local site preferences. • Cu/Ge ratio is clarified vs. the ideal Zintl composition. • Modified Becke–Johnson exchange potential agrees well with NMR Knight shifts. - Abstract: Ba{sub 8}Cu{sub x}Ge{sub 46-x} is a type-I clathrate material that forms as a semiconductor in a narrow composition range corresponding to the electron-balanced Zintl composition, with x = 5.3. We use NMR spectroscopy combined with ab initio electronic structure calculations to probe the electronic and structural behavior of these materials. Computational results based on a superstructure model for the atomic configuration of the alloy provide good agreement with the electric quadrupole-broadened NMR lineshapes. Modeling using the modified Becke–Johnson (TB-mBJ) exchange potential is also shown to agree well with experimental NMR Knight shifts. The results indicate that the Cu–Ge balance is the main factor determining the carrier density, within a narrow stability range near the ideal Zintl composition.

  5. Optoelectronic and transport properties of LiBZ (B = Al, In, Ga and Z = Si, Ge, Sn) semiconductors

    Science.gov (United States)

    Shah, Syed Hatim; Khan, Shah Haider; Laref, A.; Murtaza, G.

    2018-02-01

    Half-Heusler compounds LiBZ (B = Al, In, Ga and Z = Si, Ge, Sn) are comprehensively investigated using state of the art full potential linearized augmented plane wave (FP-LAPW) method. Stable geometry of the compounds obtained through energy minimization procedure. Lattice constant increased while bulk modulus decreased in replacing the ions of size increasing from top to bottom of the periodic table. Band structure calculations show LiInGe and LiInSn as direct bandgap while LiAlSi, LiInGe and LiGaSn indirect bandgap semiconductors. Density of states demonstrates mixed s, p, d states of cations and anions in the valence and conduction bands. These compounds have mixed ionic and covalent bonding. Compounds show dominant optical response in the visible and low frequency ultraviolet energy region. The transport properties of the compounds are described in terms of Seebeck coefficient, electrical and thermal conductivities. The calculated figure of merit of LiAlSi is in good agreement with the recent experimental results.

  6. Operation of CdZnTe Semiconductor Detectors in Liquid Scintillator for the COBRA Experiment

    International Nuclear Information System (INIS)

    Oldorf, Christian

    2015-08-01

    COBRA, the Cadmium-Zinc-Telluride O-neutrino double-Beta Research Apparatus, is an experiment aiming for the measurement of the neutrinoless double beta decay with several isotopes, in particular 116 Cd, 106 Cd and 130 Te. A highly granular large scale experiment with about 400 kg of CdZnTe semiconductor detectors is currently under development. To provide evidence for the neutrinoless double beta decay of 116 Cd, a background rate in the order of 10 -3 counts/keV/kg/a is needed to achieve the required half-life sensitivity of at least 2 . 10 26 years. To reach this target, the detectors have to be operated in a highly pure environment, shielded from external radiation. Liquid scintillator is a promising candidate as a circum fluent replacement for the currently used lacquer. Next to the function as highly pure passivation material, liquid scintillator also acts as a neutron shield and active veto for external gammas. Within this thesis, the design, construction and assembly of a test set-up is described. The operation of four CdZnTe detectors after several years of storage in liquid scintillator is demonstrated. Next to extensive material compatibility tests prior to the assembly, the commissioning of the set-up and the characterization of the detectors are shown. Finally, results concerning the background reduction capability of liquid scintillator and the detection of cosmic muons are presented and compared to a Monte Carlo simulation.

  7. The system of digital-image optical microscope in semiconductor particle detector development

    International Nuclear Information System (INIS)

    Han Lixiang; Li Zhankui; Jin Genming; Wang Zhusheng; Xiao Guoqing

    2009-01-01

    Optical microscopic detection is very important in the process of semiconductor particle detector development. A system of digital-image optical microscope has been constructed with rather low price, which performance is comparable with the moderate-level imports. The system mounts powerful dry objective, and a 2μm resolution could be achieved. Observations with bright and dark field, polarized light,and interference light can be carried out on it. The system have large area on-line monitor,and the photographic device can be controlled by PC. It can be used in the control of defects and contaminations, pattern test, identification of crystal backing, inspection of the smoothness and the flatness of the crystal surface. It can also be used in some precise procedures, such as test, assembly, packaging and repairing. The quality of the bond could be examined by observing the appearance of the bond point and the microscopic structure of the solder. The surface fluctuation can be precisely measured under the microscope with the technology of multi-beam interference. In the article, the application of this system for semiconductor particle detector development has been illustrated, and the construction information has been described in detail. (authors)

  8. A novel method for simultaneous observations of plasma ion and electron temperatures using a semiconductor-detector array

    International Nuclear Information System (INIS)

    Cho, T.; Numakura, T.; Kohagura, J.; Hirata, M.; Minami, R.; Watanabe, H.; Sasuga, T.; Nishizawa, Y.; Yoshida, M.; Nagashima, S.; Nakashima, Y.; Ogura, K.; Tamano, T.; Yatsu, K.; Miyoshi, S.

    2002-01-01

    A new method for a simultaneous observation of both plasma ion and electron temperatures is proposed using one semiconductor-detector array alone. This method will provide a new application of semiconductor-detector arrays for monitoring the key parameter set of nuclear-fusion triple product (i.e., ion temperatures, densities, and confinement time) as well as for clarifying physics mechanisms of energy transport between plasma ions and electrons under various plasma confining conditions. This method is developed on the basis of an alternative 'positive' use of a semiconductor 'dead layer'; that is, an SiO 2 layer is employed as a reliable ultra-thin energy analysis filter for low-energy charge-exchanged neutral particles from plasmas ranging in ion temperatures from 0.1 to several tens of kilo-electron-volts. Using recent fabrication techniques for the thin and uniform SiO 2 layers of the order of tens to hundreds of angstrom, our computer simulation and its experimental verification show the availability of such semiconductors for distinguishing neutral particles (for ion temperatures) from X-rays (for electron temperatures). These are simultaneously emitted from the plasmas into semiconductor detectors; however, we employ their quite different penetration lengths and the resultant different deposition depths and profiles in semiconductor materials. As a result, their output signals are distinguishable for these two different and fundamental species of plasmas

  9. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    International Nuclear Information System (INIS)

    Oliveira, Icimone B.

    2011-01-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  10. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

    2011-07-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  11. Studies of Hadronic Event Structure in $e^+ e^-$ Annihilation from 30 GeV to 209 GeV with the L3 Detector

    CERN Document Server

    Achard, P.; Aguilar-Benitez, M.; Alcaraz, J.; Alemanni, G.; Allaby, J.; Aloisio, A.; Alviggi, M.G.; Anderhub, H.; Andreev, Valery P.; Anselmo, F.; Arefev, A.; Azemoon, T.; Aziz, T.; Bagnaia, P.; Bajo, A.; Baksay, G.; Baksay, L.; Baldew, S.V.; Banerjee, S.; Banerjee, Sw.; Barczyk, A.; Barillere, R.; Bartalini, P.; Basile, M.; Batalova, N.; Battiston, R.; Bay, A.; Becattini, F.; Becker, U.; Behner, F.; Bellucci, L.; Berbeco, R.; Berdugo, J.; Berges, P.; Bertucci, B.; Betev, B.L.; Biasini, M.; Biglietti, M.; Biland, A.; Blaising, J.J.; Blyth, S.C.; Bobbink, G.J.; Bohm, A.; Boldizsar, L.; Borgia, B.; Bottai, S.; Bourilkov, D.; Bourquin, M.; Braccini, S.; Branson, J.G.; Brochu, F.; Burger, J.D.; Burger, W.J.; Cai, X.D.; Capell, M.; Romeo, G.Cara; Carlino, G.; Cartacci, A.; Casaus, J.; Cavallari, F.; Cavallo, N.; Cecchi, C.; Cerrada, M.; Chamizo, M.; Chang, Y.H.; Chemarin, M.; Chen, A.; Chen, G.; Chen, G.M.; Chen, H.F.; Chen, H.S.; Chiefari, G.; Cifarelli, L.; Cindolo, F.; Clare, I.; Clare, R.; Coignet, G.; Colino, N.; Costantini, S.; de la Cruz, B.; Cucciarelli, S.; van Dalen, J.A.; de Asmundis, R.; Deglon, P.; Debreczeni, J.; Degre, A.; Dehmelt, K.; Deiters, K.; della Volpe, D.; Delmeire, E.; Denes, P.; DeNotaristefani, F.; De Salvo, A.; Diemoz, M.; Dierckxsens, M.; Dionisi, C.; Dittmar, M.; Doria, A.; Dova, M.T.; Duchesneau, D.; Duda, M.; Echenard, B.; Eline, A.; El Hage, A.; El Mamouni, H.; Engler, A.; Eppling, F.J.; Extermann, P.; Falagan, M.A.; Falciano, S.; Favara, A.; Fay, J.; Fedin, O.; Felcini, M.; Ferguson, T.; Fesefeldt, H.; Fiandrini, E.; Field, J.H.; Filthaut, F.; Fisher, P.H.; Fisher, W.; Fisk, I.; Forconi, G.; Freudenreich, K.; Furetta, C.; Galaktionov, Iouri; Ganguli, S.N.; Garcia-Abia, Pablo; Gataullin, M.; Gentile, S.; Giagu, S.; Gong, Z.F.; Grenier, Gerald Jean; Grimm, O.; Gruenewald, M.W.; Guida, M.; Gupta, V.K.; Gurtu, A.; Gutay, L.J.; Haas, D.; Hatzifotiadou, D.; Hebbeker, T.; Herve, Alain; Hirschfelder, J.; Hofer, H.; Hohlmann, M.; Holzner, G.; Hou, S.R.; Hu, Y.; Jin, B.N.; Jones, Lawrence W.; de Jong, P.; Josa-Mutuberria, I.; Kaur, M.; Kienzle-Focacci, M.N.; Kim, J.K.; Kirkby, Jasper; Kittel, W.; Klimentov, A.; Konig, A.C.; Kopal, M.; Koutsenko, V.; Kraber, M.; Kraemer, R.W.; Kruger, A.; Kunin, A.; Ladron de Guevara, P.; Laktineh, I.; Landi, G.; Lebeau, M.; Lebedev, A.; Lebrun, P.; Lecomte, P.; Lecoq, P.; Le Coultre, P.; Le Goff, J.M.; Leiste, R.; Levtchenko, M.; Levtchenko, P.; Li, C.; Likhoded, S.; Lin, C.H.; Lin, W.T.; Linde, F.L.; Lista, L.; Liu, Z.A.; Lohmann, W.; Longo, E.; Lu, Y.S.; Luci, C.; Luminari, L.; Lustermann, W.; Ma, W.G.; Malgeri, L.; Malinin, A.; Mana, C.; Mangeol, D.; Mans, J.; Martin, J.P.; Marzano, F.; Mazumdar, K.; McNeil, R.R.; Mele, S.; Merola, L.; Meschini, M.; Metzger, W.J.; Mihul, A.; Milcent, H.; Mirabelli, G.; Mnich, J.; Mohanty, G.B.; Muanza, G.S.; Muijs, A.J.M.; Musicar, B.; Musy, M.; Nagy, S.; Natale, S.; Napolitano, M.; Nessi-Tedaldi, F.; Newman, H.; Nisati, A.; Novak, T.; Kluge, Hannelies; Ofierzynski, R.; Organtini, G.; Pal, I.; Palomares, C.; Paolucci, P.; Paramatti, R.; Passaleva, G.; Patricelli, S.; Paul, Thomas Cantzon; Pauluzzi, M.; Paus, C.; Pauss, F.; Pedace, M.; Pensotti, S.; Perret-Gallix, D.; Petersen, B.; Piccolo, D.; Pierella, F.; Pioppi, M.; Piroue, P.A.; Pistolesi, E.; Plyaskin, V.; Pohl, M.; Pojidaev, V.; Pothier, J.; Prokofev, D.; Quartieri, J.; Rahal-Callot, G.; Rahaman, Mohammad Azizur; Raics, P.; Raja, N.; Ramelli, R.; Rancoita, P.G.; Ranieri, R.; Raspereza, A.; Razis, P.; Ren, D.; Rescigno, M.; Reucroft, S.; Riemann, S.; Riles, Keith; Roe, B.P.; Romero, L.; Rosca, A.; Rosemann, C.; Rosenbleck, C.; Rosier-Lees, S.; Roth, Stefan; Rubio, J.A.; Ruggiero, G.; Rykaczewski, H.; Sakharov, A.; Saremi, S.; Sarkar, S.; Salicio, J.; Sanchez, E.; Schafer, C.; Schegelsky, V.; Schopper, H.; Schotanus, D.J.; Sciacca, C.; Servoli, L.; Shevchenko, S.; Shivarov, N.; Shoutko, V.; Shumilov, E.; Shvorob, A.; Son, D.; Souga, C.; Spillantini, P.; Steuer, M.; Stickland, D.P.; Stoyanov, B.; Straessner, A.; Sudhakar, K.; Sultanov, G.; Sun, L.Z.; Sushkov, S.; Suter, H.; Swain, J.D.; Szillasi, Z.; Tang, X.W.; Tarjan, P.; Tauscher, L.; Taylor, L.; Tellili, B.; Teyssier, D.; Timmermans, Charles; Ting, Samuel C.C.; Ting, S.M.; Tonwar, S.C.; Toth, J.; Tully, C.; Tung, K.L.; Ulbricht, J.; Valente, E.; Van de Walle, R.T.; Vasquez, R.; Veszpremi, V.; Vesztergombi, G.; Vetlitsky, I.; Vicinanza, D.; Viertel, G.; Villa, S.; Vivargent, M.; Vlachos, S.; Vodopianov, I.; Vogel, H.; Vogt, H.; Vorobev, I.; Vorobyov, A.A.; Wadhwa, M.; Wang, Q.; Wang, X.L.; Wang, Z.M.; Weber, M.; Wilkens, H.; Wynhoff, S.; Xia, L.; Xu, Z.Z.; Yamamoto, J.; Yang, B.Z.; Yang, C.G.; Yang, H.J.; Yang, M.; Yeh, S.C.; Zalite, An.; Zalite, Yu.; Zhang, Z.P.; Zhao, J.; Zhu, G.Y.; Zhu, R.Y.; Zhuang, H.L.; Zichichi, A.; Zimmermann, B.; Zoller, M.

    2004-01-01

    In this Report, QCD results obtained from a study of hadronic event structure in high energy e^+e^- interactions with the L3 detector are presented. The operation of the LEP collider at many different collision energies from 91 GeV to 209 GeV offers a unique opportunity to test QCD by measuring the energy dependence of different observables. The main results concern the measurement of the strong coupling constant, \\alpha_s, from hadronic event shapes and the study of effects of soft gluon coherence through charged particle multiplicity and momentum distributions.

  12. Development and characterization of the lead iodide semiconductor detector; Desenvolvimento e caracterizacao do detector semicondutor de iodeto de chumbo

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone Braga de

    2001-07-01

    A methodology for purification and growth of PbI{sub 2} crystal as well as for its characterization as a room temperature radiation detector was developed in this work. Commercial salts were purified using the zone refining method and, for the purified material growth, the Bridgman method was used. To calculate the purification efficiency, studies of the decrease impurities concentrations were made in the salts and in three sections of the materials purified, using the neutron activation analysis technique. The results showed that the impurities segregate preferentially in the ingot final section. A significant decrease of the impurities concentration in function of the purification pass number was observed. The grown crystals presented good crystalline quality according to the results of the X-ray diffraction analysis. To evaluate the crystal as a semiconductor detector, measurements of dark leakage current, resistivity and the response of ({sup 241}Am) alpha particle and ({sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs) gamma rays were carried out. The radiation response is strongly dependent on the crystals purity. The crystals purified with 500 passes exhibited energy resolution of 10% for {sup 241} Am alpha particle and the gamma rays resolution was compatible with the literature. The photosensibility of the PbI{sub 2} crystal found in the wavelength from 400 to 600 nm range suggests an another application at this crystal as a photodetector to be coupled to scintillators. (author)

  13. Double-tag events study with the L3 detector at $\\sqrt{s}$ = 189 GeV

    CERN Document Server

    Achard, Pablo

    2000-01-01

    A preliminary study of double tag events using the L3 detector at center of mass energy sqrt{s}=189 GeV has been performed. The cross-section of gamma* gamma* collisions is measured at average =14.5 GeV2. The results are in agreement with predictions based on perturbative QCD, while the Quark Parton Model alone is insufficient to describe the data. The measurements lie below the LO and above the NLO BFKL calculations.

  14. Development of Ge/NbSi detectors for EDELWEISS-II with identification of near-surface events

    International Nuclear Information System (INIS)

    Juillard, A.; Marnieros, S.; Dolgorouky, Y.; Berge, L.; Collin, S.; Fiorucci, S.; Lalu, F.; Dumoulin, L.

    2006-01-01

    The actual limitation of Ge ionization heat cryogenic detectors for direct WIMP detection such as EDELWEISS arises from incomplete charge collection for near-surface events. We present results on Ge/NbSi detectors that are fitted with segmented electrodes and two NbSi Anderson insulator thermometric layers. Three such bolometers were studied in the low-background cryostat of the EDELWEISS collaboration in the LSM: analysis of the athermal signals allows us to identify and reject events occurring in the first millimeter under the electrodes

  15. Development of Ge/NbSi detectors for EDELWEISS-II with identification of near-surface events

    Energy Technology Data Exchange (ETDEWEB)

    Juillard, A. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France)]. E-mail: juillard@csnsm.in2p3.fr; Marnieros, S. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Dolgorouky, Y. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Berge, L. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Collin, S. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Fiorucci, S. [C.E.A, Centre d' etudes Nucleaires de Saclay, DSM/DAPNIA, Gif. Yvette, Cedex 91191n (France); Lalu, F. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France); Dumoulin, L. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse (CSNSM), IN2P3/CNRS, Bat 108, Orsay Campus 91405 (France)

    2006-04-15

    The actual limitation of Ge ionization heat cryogenic detectors for direct WIMP detection such as EDELWEISS arises from incomplete charge collection for near-surface events. We present results on Ge/NbSi detectors that are fitted with segmented electrodes and two NbSi Anderson insulator thermometric layers. Three such bolometers were studied in the low-background cryostat of the EDELWEISS collaboration in the LSM: analysis of the athermal signals allows us to identify and reject events occurring in the first millimeter under the electrodes.

  16. Improvement of the GERDA Ge Detectors Energy Resolution by an Optimized Digital Signal Processing

    Science.gov (United States)

    Benato, G.; D'Andrea, V.; Cattadori, C.; Riboldi, S.

    GERDA is a new generation experiment searching for neutrinoless double beta decay of 76Ge, operating at INFN Gran Sasso Laboratories (LNGS) since 2010. Coaxial and Broad Energy Germanium (BEGe) Detectors have been operated in liquid argon (LAr) in GERDA Phase I. In the framework of the second GERDA experimental phase, both the contacting technique, the connection to and the location of the front end readout devices are novel compared to those previously adopted, and several tests have been performed. In this work, starting from considerations on the energy scale stability of the GERDA Phase I calibrations and physics data sets, an optimized pulse filtering method has been developed and applied to the Phase II pilot tests data sets, and to few GERDA Phase I data sets. In this contribution the detector performances in term of energy resolution and time stability are here presented. The improvement of the energy resolution, compared to standard Gaussian shaping adopted for Phase I data analysis, is discussed and related to the optimized noise filtering capability. The result is an energy resolution better than 0.1% at 2.6 MeV for the BEGe detectors operated in the Phase II pilot tests and an improvement of the energy resolution in LAr of about 8% achieved on the GERDA Phase I calibration runs, compared to previous analysis algorithms.

  17. Performance tests of developed silicon strip detector by using a 150 GeV electron beam

    International Nuclear Information System (INIS)

    Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

    2008-01-01

    We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

  18. Measurement of 15 MeV gamma-rays with the Ge cluster detectors of EUROBALL

    CERN Document Server

    Million, B; Camera, F; Brambilla, S; Gadea, A; Giugni, D; Herskind, B; Kmiecik, M; Isocrate, R; Leoni, S; Maj, A; Prelz, F; Wieland, O

    2000-01-01

    A measurement of the response to 15.1 MeV gamma-rays has been made for the Ge cluster detectors in the EUROBALL array. Each cluster detector consists of seven germanium capsules surrounded by a single anticompton shield of BGO. The reaction D( sup 1 sup 1 B,gamma) sup 1 sup 2 C+n at E sub b sub e sub a sub m =19.1 MeV has been employed. The 'adding-back' of signals simultaneously present in the capsules composing each cluster detector has been made on an event by event basis. The intensity in full-energy peak increases by a factor of three as compared to that of the spectrum obtained by summing the individual spectra of the 7 capsules. The pulse height to energy conversion is found to be very linear from few hundreds keV to 15 MeV. The efficiency is discussed relative to that of large volume BaF sub 2 scintillators.

  19. Measurement of radioactive tracer microsphere blood from with NaI(Tl)- and Ge-well type detectors

    International Nuclear Information System (INIS)

    Winkler, B.; Staemmler, G.; Schaper, W.; Frank, J.; Langsdorf, S.

    1982-01-01

    An intrinsic Ge-well type detector was applied for the detection of gamma rays from labeled tracer microspheres. The high energy resolution and the large peak-to-Compton ratio of this spectrometer ensures the application of all available differently labeled tracer microspheres in one experiment. The superior energy resolution of the Ge-detector was documented with the separated photopeak regions of 103-Ru and 85-Sr-labeled tracer microspheres, which result in a single photopeak when an NaI(Tl) detector is used. The Ge-well type detector was compared with an NaI(Tl) spectrometer by counting samples of cardiac muscle in either spectrometer systems. Regression analysis between both spectrometer systems demonstrate identical flow values in these samples for 5 differently labeled tracer microspheres which were administered in 5 dogs. The high sensitivity of the Ge-well-type detector together with a suitable technique for sampling of myocardial tissue accomplishes a high spatial resolution of myocardial perfusion for all available differently labeled tracer microspheres. (orig.)

  20. A new metallic oxide semiconductor field effect transistor detector for use of in vivo dosimetry

    International Nuclear Information System (INIS)

    Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Kang Dehua; Anatoly Rosenfeld

    2006-01-01

    Objective: To investigate the application of a recently developed metallic oxide semiconductor field effect transistor (MOSFET) detector for use in vivo dosimetry. Methods: The MOSFET detector was calibrated for X-ray beams of 8 MV and 15 MV, as well as electron beams with energy of 6,8,12 and 18 MeV. The dose linearity of the MOSFET detector was investigated for the doses ranging from 0 up to 50 Gy using 8 MV X-ray beams. Angular effect was evaluated as well in a cylindrical PMMA phantom by changing the beam entrance angle every 15 degree clockwise. The MOSFET detector was then used for a breast cancer patient in vivo dose measurement, after the treatment plan was verified in a water phantom using a NE-2571 ion chamber, in vivo measurements were performed in the first and last treatment, and once per week during the whole treatment. The measured doses were then compared with planning dose to evaluate the accuracy of each treatment. Results: The MOSFET detector represented a good energy response for X-ray beams of 8 MV and 15 MV, and for electron beams with energy of 6 MeV up to 18 MeV. With the 6 V bias, Dose linearity error of the MOSFET detector was within 3.0% up to approximately 50 Gy, which can be significantly reduced to 1% when the detector was calibrated before and after each measurement. The MOSFET response varied within 1.5% for angles from 270 degree to 90 degree. However, maximum error of 10.0% was recorded comparing MOSFET response between forward and backward direction. In vivo measurement for a breast cancer patient using 3DCRT showed that, the average dose deviation between measurement and calculation was 2.8%, and the maximum error was less then 5.0%. Conclusions: The new MOSFET detector, with its advantages of being in size, easy use, good energy response and dose linearity, can be used for in vivo dose measurement. (authors)

  1. Pulse-height loss in the signal readout circuit of compound semiconductor detectors

    Science.gov (United States)

    Nakhostin, M.; Hitomi, K.

    2018-06-01

    Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

  2. Development of novel semiconductor detectors for the detection of ionizing radiation

    International Nuclear Information System (INIS)

    Strueder, L.

    1989-08-01

    The present thesis treats the development of novel energy- and position-resolving semiconductor detectors: Fully depletable pn CCD's. In experiments of high-energy physics they are suited as highly resolving position-sensitive detectors for minimally ionizing particles. In nuclear and atomic physics they can be applied as position-resolving energy spectrometers. Increasing interest detectors of this type find also at synchrotron-radiation sources with photon energies from 20 eV to 50 keV. As focal instruments of X-ray telescopes they are in astrophysical measurements in an energy range from 100 eV to 15 keV of use. The required accuracy in the energy measurement amounts to 100 eV (FWHM) at an X-ray energy of 1 keV, at a simultaneous precision of the position determination of 50 μm. The measurement results which are here presented on the first fully depletable CCD's show that the components posses the potential to fulfill these requirements. (orig.) [de

  3. Development of the mercury iodide semiconductor crystal for application as a radiation detector

    International Nuclear Information System (INIS)

    Martins, Joao Francisco Trencher

    2011-01-01

    In this work, the establishment of a technique for HgI growth and preparation of crystals, for use as room temperature radiation semiconductor detectors is described. Three methods of crystal growth were studied while developing this work: physical vapor transport (PVT); saturated solution of HgI 2 , using two different solvents; (a) dimethyl sulfoxide (DMSO) and (b) acetone, and the Bridgman method. In order to evaluate the obtained crystals by the three methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physical chemical properties on the crystals development was studied, evaluating their performance as radiation detectors. The X-ray diffractograms indicated that the crystals were, preferentially, oriented in the (001) e (101) directions with tetragonal structure for all crystals. Nevertheless, morphology with a smaller deformation level was observed for the crystal obtained by the PVT technique, comparing to other methods. Uniformity on the surface layer of the PVT crystal was detected, while clear incrustations of elements distinct from the crystal could be viewed on the DMSO crystal surface. The best results as to radiation response were found for the crystal grown by physical vapor transport. Significant improvement in the HgI z2 radiation detector performance was achieved for purer crystals, growing the crystal twice by PVT technique. (author)

  4. Influence of hydrostatic pressure on nuclear radiation detector's properties based on semiconductor alloy CdZnTe

    International Nuclear Information System (INIS)

    Kutnij, V.E.; Kutnij, D.V.; Rybka, A.V.; Nakonechnyj, D.V.; Babun, A.V.

    2003-01-01

    The influence of hydrostatic pressure on properties of CdZnTe semiconductor detectors (Cd-50,Zn-2,Te-48 mas.%, 5 centre dot 5 centre dot 2 mm) was investigated. Were considered different types of hydrostatic treatment at 100 MPa, second hydrostatic treatment at 100 MPa and 200 MPa. Hydrostatic pressure influence on detectors electric resistance, J-V characteristics and spectrometric parameters was determined

  5. Microstructure and magnetic behavior of Mn doped GeTe chalcogenide semiconductors based phase change materials

    Science.gov (United States)

    Adam, Adam Abdalla Elbashir; Cheng, Xiaomin; Abuelhassan, Hassan H.; Miao, Xiang Shui

    2017-06-01

    Phase-change materials (PCMs) are the most promising candidates to be used as an active media in the universal data storage and spintronic devices, due to their large differences in physical properties of the amorphous-crystalline phase transition behavior. In the present study, the microstructure, magnetic and electrical behaviors of Ge0.94Mn0.06Te thin film were investigated. The crystallographic structure of Ge0.94Mn0.06Te thin film was studied sing X-ray diffractometer (XRD) and High Resolution Transmission Electron Microscope (HR-TEM). The XRD pattern showed that the crystallization structure of the film was rhombohedral phase for GeTe with a preference (202) orientation. The HR-TEM image of the crystalline Ge0.94Mn0.06Te thin film demonstrated that, there were two large crystallites and small amorphous areas. The magnetization as a function of the magnetic field analyses of both amorphous and crystalline states showed the ferromagnetic hysteretic behaviors. Then, the hole carriers concentration of the film was measured and it found to be greater than 1021 cm-3 at room temperature. Moreover, the anomalous of Hall Effect (AHE) was clearly observed for the measuring temperatures 5, 10 and 50 K. The results demonstrated that the magnitude of AHE decreased when the temperature was increasing.

  6. Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    International Nuclear Information System (INIS)

    Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

    2016-01-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

  7. Dual photon absorptiometer utilizing a HpGe detector and microprocessor controller

    International Nuclear Information System (INIS)

    Ellis, K.J.; Vartsky, D.; Pearlstein, T.B.; Alberi, J.L.; Cohn, S.H.

    1978-01-01

    The analysis of bone mineral content (BMC) using a single energy-photon beam assumes that there are only two materials present, bone mineral and a uniform soft tissue component. Uncertainty in the value of BMC increases with different adipose tissue components in the transmitted beam. These errors, however, are reduced by the dual energy technique. Also, extension to additional energies further identifies the separate constituents of the soft tissue component. A multi-energy bone scanning apparatus with data acquisition and analysis capability sufficient to perform multi-energy analysis of bone mineral content was designed and developed. The present work reports on the development of device operated in the dual energy mode. The high purity germanium (HpGe) detector is an integral component of the scanner. Errors in BMC due to multiple small angle scatters are reduced due to the excellent energy resolution of the detector (530 eV at 60 keV). Also, the need to filter the source or additional collimation on the detector is eliminated. A new dual source holder was designed using 200 mCi 125 I and 100 mCi 241 Am. The active areas of the two source capsules are aligned on a common axis. The congruence of the dual source was verified by measuring the collimator response function. This new holder design insures that the same tissue mass simultaneously attenuates both sources. The controller portion of the microprocessor allows for variation in total scan length, step size, and counting time per step. These options allow for multiple measurements without changes in the detector, source, or collimator. The system has been successfully used to determine the BMC content of different bones

  8. Absolute peak detection efficiencies of a Ge(Li) detector for high gamma-ray energies

    International Nuclear Information System (INIS)

    Katagiri, Masaki

    1985-11-01

    Absolute peak detection efficiencies of a Ge(Li) detector for gamma-rays of 3.5 MeV to 12 MeV were measured using four (p,γ) reactions and a (n,γ) reaction. Two-line-method was used to obtaine peak detection efficiencies. The efficiencies with the both cases are agreed very well. Utilization of (n,γ) reaction is, therefore, effective for measuring these efficiencies, because high energy gamma-rays can be generated easily by using a neutron source. These results were applied to calibration of a gamma-ray standard source, emitting 6.13 MeV gamma-rays, and of intensities of 56 Co standard gamma-ray source. (author)

  9. Efficiency correction for disk sources using coaxial High-Purity Ge detectors

    International Nuclear Information System (INIS)

    Chatani, Hiroshi.

    1993-03-01

    Efficiency correction factors for disk sources were determined by making use of closed-ended coaxial High-Purity Ge (HPGe) detectors, their relative efficiencies for a 3' 'x3' ' NaI(Tl) with the 1.3 MeV γ-rays were 30 % and 10 %, respectively. Parameters for the correction by mapping method were obtained systematically, using several monoenergetic (i.e. no coincidence summing loses) γ-ray sources produced by irradiation in the Kyoto University Reactor (KUR) core. These were found out that (1) the systematics of the Gaussian fitting parameters, which were calculated using the relative efficiency distributions of HPGe, to the γ-ray energies are recognized, (2) the efficiency distributions deviate from the Gaussian distributions outside of the radii of HPGe. (3) mapping method is a practical use in satisfactory accuracy, as the results in comparison with the disk source measurements. (author)

  10. SAMPO80, Ge(Li) Detector Gamma Spectra Unfolding with Isotope Identification

    International Nuclear Information System (INIS)

    Koskelo, M.J.; Aarnio, P.A.; Routti, J.T.

    1998-01-01

    1 - Description of problem or function: Analysis of gamma spectra measured with Ge(Li) or HPGe detectors. 2 - Method of solution: - Shape calibration using a non-linear least squares algorithm with a variable metric method. - Peak location with a smoothed second difference method. - Peak area calculation with a linear least squares fit to predefined peak shapes. - Nuclide identification with a linear least squares fit based on associated lines. 3 - Restrictions on the complexity of the problem: Number of shape calibration points allowed: 20; Number of energy calibration points allowed: 20; Number of efficiency calibration points allowed: 20; Maximum number of found peaks: 100; Maximum number of fitted peaks: 100; Maximum number of peaks in a multiplet: 5; Maximum number of channels in a fitting interval: 50; Maximum number of peaks for nuclide identification: 80; Maximum number of identified nuclides: 30; Maximum number of lines per nuclide: 30

  11. Energy resolution and throughput of a new real time digital pulse processing system for x-ray and gamma ray semiconductor detectors

    International Nuclear Information System (INIS)

    Abbene, L; Gerardi, G; Raso, G; Brai, M; Principato, F; Basile, S

    2013-01-01

    New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring higher flexibility, stability, lower dead time, higher throughput and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive-feedback preamplifiers, highlight the excellent performance of the system both at low and high rate environments (up to 800 kcps). A comparison with a conventional analog electronics showed the better high-rate capabilities of the digital approach, in terms of energy resolution and throughput. These results make the proposed DPP system a very attractive tool for both laboratory research and for the development of advanced detection systems for high-rate-resolution spectroscopic imaging, recently proposed in diagnostic medicine, industrial imaging and security screening

  12. Spectrum interpretation problems with well-type Ge(Li) detectors due to self-absorption variations

    International Nuclear Information System (INIS)

    Bruin, M. de; Korthoven, P.J.M.; Bode, P.

    1979-01-01

    For use in instrumental neutron activation analysis, a well-type Ge(Li) detector compares favourably with a comparable detector without well. It combines a good energy resolution with a relatively high detector efficiency. Moreover, this efficiency is almost independent of sample dimensions. But the use of a well-type Ge(Li) detector also has been some drawbacks, as large summation effects will result from the high detector efficiency. The least severe aspect of this summation is the additional formation of many extra sum peaks in gamma-ray spectra of nuclides with moderate or highly complex decay schemes. This leads to higher computation times, but in general, the accuracy of the analysis will not be affected. A far more important aspect of the summation is found in the fact that the intensity ratios between high energy peaks and the sum peaks of self-absorption effects, which in a flat detector is limited to only the low energy part of the spectrum, may be extended to the high energy region. This leads to sample-dependent distortion of the high energy part of the gamma-ray spectrum which may result in misinterpretation of instrumental neutron activation analysis data. The only solution to this problem seems to be to prevent the relevant low energy photons from reaching the detector. This can be accomplished by using a high Z absorber inside the detector well. (Auth.)

  13. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-12-15

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  14. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al 2 O 3 and HfO 2 . However, there has been much effort to deposit ternary oxides, such as perovskites (ABO 3 ), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable

  15. Structural characterization of the high-temperature modification of the Cu_2ZnGeTe_4 quaternary semiconductor compound

    International Nuclear Information System (INIS)

    Nieves, L.; Marcano, G.; Power, C.; Rincon, C.; Delgado, G.E.; Lopez-Rivera, S.A.

    2016-01-01

    A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu_2ZnGeTe_4 quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm"-"1 have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm"-"1 tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this high-temperature modification of ZnTe and Cu_2GeTe_3 secondary phases has been detected by both XRD and Raman spectroscopy. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Transition radiation detectors for electron identification beyond 1 GeV/c

    International Nuclear Information System (INIS)

    Appuhn, R.D.; Heinloth, K.; Lange, E.; Oedingen, R.; Schloesser, A.

    1987-07-01

    Transition radiation detectors (TRDs) have been tested for the separation of electrons from pions in the momentum range between 1 GeV/c and 6 GeV/c. Foams as well as fibres and foils served as radiator materials while two types of chambers, a longitudinal drift chamber (DC) and a multiwire proportional chamber (MWPC), both of 16 mm depth and dominantly filled with xenon, were used for detecting the transition radiation photons with a setup of four chambers. Analyzing the data we compared the methods of mean, truncated mean and of maximum likelihood of the total charge measurements and several methods of cluster analysis. As a result of the total charge measurements performed at test beams at CERN and DESY we obtained about 1% pion contamination at 90% electron efficiency for the polypropylene materials in the configuration of four modules with a total length of 40 cm. An improvement by a factor of about two for the electron/pion discrimination can be obtained in case of a detailed analysis of the clusters. (orig.)

  17. A new computational method for simulation of charge transport in semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Holban, I.

    1993-01-01

    An effective computational method for simulation of charge transport in semiconductor radiation detectors is the purpose of the present work. Basic equations for analysis include (1) Poisson's equations, (2) continuity equation for electrons and holes, (3) rate equations for deep levels, (4) current equation for electrons and holes and (5) boundary conditions. The system of equations is discretized and equidistant space and time grids is brought. The nonlinearity of the problem is overcome by using Newton-Raphson iteration scheme. Instead of solving a nonlinear boundary problem we resolve a linear matrix equation. Our computation procedure becomes very efficient using a sparse matrix. The computed program allows to calculate the charge collection efficiency and transient response for arbitrary electric fields when trapping and detrapping effects are present. The earlier literature results are reproduced. (Author)

  18. PC based analysis of gamma ray spectra generated by semiconductor detectors

    International Nuclear Information System (INIS)

    Abani, M.C.; Madan, V.K.

    1993-01-01

    This report describes a spectrum analysis method and computer program for analysis of gamma spectra obtained by using semiconductor detectors and multichannel analysers. The analysis steps incorporated are smoothing, peak location using signal processing method of convolution, selectable background subtraction viz linear, polynomial and step like, peak fitting both for singlets and doublets using Mukoyama's method for evaluation of full width at half maximum and area evaluation including errors in its evaluation. The program also provides a facility for energy calibration. Typical results of analysis for singlets and doublets are included. This report is based on Wilson's report which has been modified and extended. The program is written in BASIC and its listing is included in the appendices. (author). 20 refs., 2 figs., 2 tabs

  19. Treatment verification and in vivo dosimetry for total body irradiation using thermoluminescent and semiconductor detectors

    International Nuclear Information System (INIS)

    Oliveira, F.F.; Amaral, L.L.; Costa, A.M.; Netto, T.G.

    2014-01-01

    The objective of this work is the characterization of thermoluminescent and semiconductor detectors and their applications in treatment verification and in vivo dosimetry for total body irradiation (TBI) technique. Dose measurements of TBI treatment simulation performed with thermoluminescent detectors inserted in the holes of a “Rando anthropomorphic phantom” showed agreement with the prescribed dose. For regions of the upper and lower chest where thermoluminescent detectors received higher doses it was recommended the use of compensating dose in clinic. The results of in vivo entrance dose measurements for three patients are presented. The maximum percentual deviation between the measurements and the prescribed dose was 3.6%, which is consistent with the action level recommended by the International Commission on Radiation Units and Measurements (ICRU), i.e., ±5%. The present work to test the applicability of a thermoluminescent dosimetric system and of a semiconductor dosimetric system for performing treatment verification and in vivo dose measurements in TBI techniques demonstrated the value of these methods and the applicability as a part of a quality assurance program in TBI treatments. - Highlights: • Characterization of a semiconductor dosimetric system. • Characterization of a thermoluminescent dosimetric system. • Application of the TLDs for treatment verification in total body irradiation treatments. • Application of semiconductor detectors for in vivo dosimetry in total body irradiation treatments. • Implementation of in vivo dosimetry as a part of a quality assurance program in radiotherapy

  20. Find - a computer program for peak search in gamma-ray spectra measured with Ge (Li) detectors

    International Nuclear Information System (INIS)

    Venturini, L.

    1988-01-01

    The program FIND is a FORTRAN IV computer code for peak search in spectra measured with Ge(Li) detectors. The program gives the position and estimates energy and relative significance for every peak found in the spectrum. The search in done by calculating a negative smoothed second difference of the experimental spectrum, as suggested by Phillips and Marlow (1). (author) [pt

  1. Efficiency calibration of x-ray HPGe detectors for photons with energies above the Ge K binding energy

    Energy Technology Data Exchange (ETDEWEB)

    Maidana, Nora L., E-mail: nmaidana@if.usp.br [Instituto de Física, Universidade de São Paulo, Travessa R 187, Cidade Universitária, CEP:05508-900 São Paulo, SP (Brazil); Vanin, Vito R.; Jahnke, Viktor [Instituto de Física, Universidade de São Paulo, Travessa R 187, Cidade Universitária, CEP:05508-900 São Paulo, SP (Brazil); Fernández-Varea, José M. [Facultat de Física (ECM and ICC), Universitat de Barcelona, Diagonal 645, E-08028 Barcelona (Spain); Martins, Marcos N. [Instituto de Física, Universidade de São Paulo, Travessa R 187, Cidade Universitária, CEP:05508-900 São Paulo, SP (Brazil); Brualla, Lorenzo [NCTeam, Strahlenklinik, Universitätsklinikum Essen, Hufelandstraße 55, D-45122 Essen (Germany)

    2013-11-21

    We report on the efficiency calibration of a HPGe x-ray detector using radioactive sources and an analytical expression taken from the literature, in two different arrangements, with and without a broad-angle collimator. The frontal surface of the Ge crystal was scanned with pencil beams of photons. The Ge dead layer was found to be nonuniform, with central and intermediate regions that have thin (μm range) and thick (mm range) dead layers, respectively, surrounded by an insensitive ring. We discuss how this fact explains the observed efficiency curves and generalize the adopted model. We show that changes in the thickness of the Ge-crystal dead layer affect the efficiency of x-ray detectors, but the use of an appropriate broad-beam external collimator limiting the photon flux to the thin dead layer in the central region leads to the expected efficiency dependence with energy and renders the calibration simpler.

  2. Summer program Report : Quality control and Aging study for the GE1/1 detectors in CMS Muon endcap upgrade

    CERN Document Server

    Rajan, Adithya

    2017-01-01

    In this report, I summarize the work I did during my tenure in the Summer program. The project started with conducting three quality controls -- gas leak test, High Voltage test and Gas gain test. These are necessary to check if the GE1/1 detectors pass the requirements necessary for its deployment in the CMS. Then, I explain how aging study of the detectors was conducted and how the data was analyzed to ascertain if the detector has undergone aging. Lastly, the ongoing process of setting up a further accelerated aging study within the GEM lab is explained, with some potential difficulties associated with it.

  3. Mathematical calibration of Ge detectors, and the instruments that use them

    Energy Technology Data Exchange (ETDEWEB)

    Bronson, F.L.; Young, B. [Canberra Industries, Meriden, CT (United States)

    1997-11-01

    Efficiency calibrations for Ge detectors are typically done with the use of multiple energy calibrations sources which are added to a bulk matrix intended to simulate the measurement sample, and then deposited in the sample container. This is rather easy for common laboratory samples. Bu, even there, for many environmental samples, waste assay samples, and operational health physics samples, accurate calibrations are difficult. For these situations, various mathematical corrections or direct calibration techniques are used at Canberra. EML has pioneered the use of mathematical calibrations following source-based detector characterization measurements for in situ measurements of environmental fallout. Canberra has expanded this by the use of MCNP for the source measurements required in EML. For other calibration situations, MCNP was used directly, as the primary calibration method. This is demonstrated to be at least as accurate as source based measurements, and probably better. Recently, a new method [ISOCS] has been developed and is nearing completion. This promises to be an easy to use calibration software that can be used by the customer for in situ gamma spectroscopy to accurately measure many large sized samples, such as boxes, drums, pipes, or to calibrate small laboratory-type samples. 8 refs., 8 figs., 5 tabs.

  4. Mathematical calibration of Ge detectors, and the instruments that use them

    International Nuclear Information System (INIS)

    Bronson, F.L.; Young, B.

    1997-01-01

    Efficiency calibrations for Ge detectors are typically done with the use of multiple energy calibrations sources which are added to a bulk matrix intended to simulate the measurement sample, and then deposited in the sample container. This is rather easy for common laboratory samples. Bu, even there, for many environmental samples, waste assay samples, and operational health physics samples, accurate calibrations are difficult. For these situations, various mathematical corrections or direct calibration techniques are used at Canberra. EML has pioneered the use of mathematical calibrations following source-based detector characterization measurements for in situ measurements of environmental fallout. Canberra has expanded this by the use of MCNP for the source measurements required in EML. For other calibration situations, MCNP was used directly, as the primary calibration method. This is demonstrated to be at least as accurate as source based measurements, and probably better. Recently, a new method [ISOCS] has been developed and is nearing completion. This promises to be an easy to use calibration software that can be used by the customer for in situ gamma spectroscopy to accurately measure many large sized samples, such as boxes, drums, pipes, or to calibrate small laboratory-type samples. 8 refs., 8 figs., 5 tabs

  5. Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe

    Directory of Open Access Journals (Sweden)

    Bouhafs B.

    2012-06-01

    Full Text Available The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge, III-V (GaAs, GaP and II-VI (ZnSe, ZnTe with both methods; tight Binding1 method and pseudo potential method2. This work enables us to understand as well as the mechanism of conduction process in these semiconductors and powers and limits of the above methods. The obtained results allow to conclude that both methods are in a good agreement to describe the morphology of band structures of the cited semiconductors. This encourages us to study in the future the electronic behaviour through the structure of bands for more complex systems such as the heterostructures.

  6. Experimental bounds on ββ-decay, cold dark matter and solar axions with an ultralow background Ge detector

    International Nuclear Information System (INIS)

    Avignone, F.T. III; Ahlen, S.P.; Brodzinski, R.L.

    1986-01-01

    The PNL/USC ultralow background prototype Ge detector in the Homestake goldmine is being applied to searches for O nu ββ-decay, dark matter candidates and solar axions. An upper bound of 2.2 eV has been placed on the Majorana mass of the electron neutrino. The low energy data exclude particles with spin independent Z 0 exchange interactions having masses between 20 GeV and 5 TeV, as significant contributors to the cold dark matter of the halo of their galaxy. The existence of stable Dirac neutrinos more massive than 20 GeV is also excluded except for a narrow region around the Z 0 resonance. Finally, Dine-Fischler-Srednicki (DFS) axion models with F/2x/sub e/' ≤ 0.5 x10 7 GeV are ruled out by the maximum count rate attributable to solar axions

  7. Experimental bounds on ββ-decay, cold dark matter and solar axions with an ultralow background Ge detector

    International Nuclear Information System (INIS)

    Avignone, F.T. III; Ahlen, S.P.; Brodzinski, R.L.

    1986-01-01

    The PNL/USC ultralow background prototype Ge detector in the Homestake goldmine is being applied to searches for 0 nu ββ-decay, dark matter candidates and solar axions. An upper bound of 2.2 eV has been placed on the Majorana mass of the electron neutrino. The low energy data exclude particles with spin independent Z 0 exchange interactions having masses between 20 GeV and 5 TeV as significant contributors to the cold dark matter of the halo of our galaxy. The existence of stable Dirac neutrinos more massive than 20 GeV is also excluded except for a narrow region around the Z 0 resonance. Finally, Dine-Fischler-Srednicki (DFS) axion models with F/2x'/sub e/ ≤ 0.5 x 10 7 GeV are ruled out by the maximum count rate attributable to solar axions. 36 refs., 11 figs

  8. Fast front-end electronics for semiconductor tracking detectors: Trends and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    Rivetti, Angelo

    2014-11-21

    In the past few years, extensive research efforts pursued by both the industry and the academia have lead to major improvements in the performance of Analog to Digital Converters (ADCs) and Time to Digital Converters (TDCs). ADCs achieving 8–10 bit resolution, 50–100 MHz conversion frequency and less than 1 mW power consumption are the today's standard, while TDCs have reached sub-picosecond time resolution. These results have been made possible by architectural upgrades combined with the use of ultra deep submicron CMOS technologies with minimum feature size of 130 nm or smaller. Front-end ASICs in which a prompt digitization is followed by signal conditioning in the digital domain can now be envisaged also within the tight power budget typically available in high density tracking systems. Furthermore, tracking detectors embedding high resolution timing capabilities are gaining interest. In the paper, ADC's and TDC's developments which are of particular relevance for the design front-end electronics for semiconductor trackers are discussed along with the benefits and challenges of exploiting such high performance building blocks in implementing the next generation of ASICs for high granularity particle detectors.

  9. In vivo dosimetry with semiconductor and thermoluminescent detectors applied to head and neck cancer treatment

    International Nuclear Information System (INIS)

    Viegas, Claudio Castelo Branco

    2003-03-01

    In vivo dosimetry in radiotherapy, i. e, the assessment of the doses received by patients during their treatments, permits a verification of the therapy quality. A routine of in vivo dosimetry is, undoubtedly, a direct benefit for the patient. Unfortunately, in Brazil and in Latin America this procedure is still a privilege for only a few patients. This routine is of common application only in developed countries. The aim of this work is to show the viability and implementation of a routine in vivo dosimetry, using diodes semiconductors and thermoluminescent dosimeters (TLD), at the radiotherapy section of the National Institute of Cancer in Brazil, in the case of head and neck cancer treatment. In order to reach that aim, the characteristics of the response of diodes ISORAD-p and LiF:Mg;Ti (TLD-100) thermoluminescent detectors in powder form were determined. The performance of those detectors for in vivo dosimetry was tested using an RANDO Alderson anthropomorfic phantom and, once their adequacy proved for the kind of measurements proposed, they were used for dose assessment in the case of tumour treatments in the head and neck regions, for Cobalt-60 irradiations. (author)

  10. Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Roecker, Caleb Daniel [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Schirato, Richard C. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-11-17

    Charge trapping, resulting in a decreased and spatially dependent electric field, has long been a concern for wide bandgap semiconductor detectors. While significant work has been performed to characterize this degradation at varying temperatures and radiation environments, this work concentrates upon examining the event-to-event response in a flash X-ray environment. The following work investigates if charge trapping is a problem for CZT detectors, with particular emphasis on flash X-ray radiation fields at cold temperatures. Results are compared to a non-flash radiation field, using an Am-241 alpha source and similar temperature transitions. Our ability to determine if a response change occurred was hampered by the repeatability of our flash X-ray systems; a small response change was observed with the Am-241 source. Due to contrast of these results, we are in the process of revisiting the Am-241 measurements in the presence of a high radiation environment. If the response change is more pronounced in the high radiation environment, a similar test will be performed in the flash X-ray environment.

  11. Amplitude and rise time compensated timing optimized for large semiconductor detectors

    International Nuclear Information System (INIS)

    Kozyczkowski, J.J.; Bialkowski, J.

    1976-01-01

    The ARC timing described has excellent timing properties even when using a wide range e.g. from 10 keV to over 1 MeV. The detector signal from a preamplifier is accepted directly by the unit as a timing filter amplifier with a sensitivity of 1 mV is incorporated. The adjustable rise time rejection feature makes it possible to achieve a good prompt time spectrum with symmetrical exponential shape down to less than 1/100 of the peak value. A complete block diagram of the unit is given together with results of extensive tests of its performance. For example the time spectrum for (1330+-20) keV of 60 Co taken with a 43 cm 3 Ge(Li) detector has the following parameters: fwhm = 2.2ns, fwtm = 4.4 ns and fw (0.01) m = 7.6 ns and for (50 +- 10) keV of 22 Na the following was obtained: fwhm = 10.8 ns, fwtm = 21.6 ns and fw (0.01) m = 34.6 ns. In another experiment with two fast plastic scintillations (NE 102A) and using a 20% dynamic energy range the following was measured: fwhm = 280 ps, fwtm = 470 ps and fw (0.01) m = 70ps. (Auth.)

  12. Coakial gamma ray detector and method therefor

    International Nuclear Information System (INIS)

    Harchol, M.

    1977-01-01

    A coaxial gamma ray detector is fabricated using intrinsic Ge semiconductor material in a geometry whereby full depletion of electrical carriers is prevented within a small region proximate the point of electrical contact thereby allowing greater biasing potentials across the detector and, consequently, providing reduced electronic noise and increased energy resolution

  13. Background reduction at low energies with BEGe detector operated in liquid argon using the GERDA-LArGe facility

    Energy Technology Data Exchange (ETDEWEB)

    Budjas, Dusan [Physik-Department E15, Technische Universitaet Muenchen (Germany); Collaboration: GERDA-Collaboration

    2014-07-01

    LArGe is a low background test facility used for proving innovative approaches to background reduction in support of the neutrinoless double beta decay experiment Gerda. These approaches include an anti-Compton veto using scintillation light detection from liquid argon, as well as a novel pulse shape discrimination method exploiting the characteristic electrical field distribution inside BEGe detectors. The latter technique can identify single-site events (typical for double beta decays) and efficiently reject multi-site events (typical for backgrounds from gamma-ray interactions), as well as different types of background events from detector surfaces. While the main focus of the LArGe facility is to assist with reaching the goal of Gerda - improving the sensitivity for {sup 76}Ge neutrinoless double beta decay search, reducing the background at low energies and lowering the energy threshold is also of interest. In particular such efforts can be potentially relevant for search of dark matter or low energy neutrino interactions. In this talk I present the experimental measurement of the low energy region with a BEGe detector operated in LArGe with the application of powerful background suppression methods. The performance will be compared to that of some dedicated dark matter detection experiments.

  14. Comparison of Cadmium-Zinc-Telluride semiconductor and Yttrium-Aluminum-Perovskite scintillator as photon detectors for epithermal neutron spectroscopy

    International Nuclear Information System (INIS)

    Tardocchi, M.; Pietropaolo, A.; Andreani, C.; Gorini, G.; Imberti, S.; Perelli-Cippo, E.; Senesi, R.; Rhodes, N.; Schooneveld, E.M.

    2006-01-01

    The range of applications of epithermal neutron scattering experiments has been recently extended by the development of the Resonance Detector. In a Resonance Detector, resonant neutron absorption in an analyzer foil results in prompt emission of X- and γ-rays which are detected by a photon counter. Several combinations of analyzer foils and photon detectors have been studied and tested over the years and best results have been obtained with the combination of a natural uranium and (i) Cadmium-Zinc-Telluride (CZT) semiconductor (ii) Yttrium-Aluminum-Perovskite (YAP) scintillators. Here we compare the performance of the CZT semiconductor and YAP scintillator as Resonance Detector units. Two Resonance Detector prototypes made of natural uranium foil viewed by CZT and YAP were tested on the VESUVIO spectrometer at the ISIS spallation neutron source. The results show that both YAP and CZT can be used to detect epithermal neutrons in the energy range from 1 up to 66 eV. It was found that the signal-to-background ratio of the measurement can significantly be improved by raising the lower level discrimination threshold on the γ energy to about 600 keV. The advantages/disadvantages of the choice of a Resonance Detector based on YAP or CZT are discussed together with some potential applications

  15. Dosimetric evaluation of semiconductor detectors for application in neutron dosimetry and microdosimetry in nuclear reactor and radiosurgical facilities

    International Nuclear Information System (INIS)

    Cardenas, Jose Patricio Nahuel

    2010-01-01

    The main objective of this research is the dosimetric evaluation of semiconductor components (surface barrier detectors and PIN photodiodes) for applications in dose equivalent measurements on low dose fields (fast and thermal fluxes) using an AmBe neutron source, the IEA-R1 reactor neutrongraphy facility (epithermal and thermal fluxes) and the Critical Unit facility IPEN/MB-01 (fast fluxes). As moderator compound to fast neutrons flux from the AmBe source was used paraffin and boron and polyethylene as converter for thermal and fast neutrons measurements. The resulting fluxes were used to the irradiation of semiconductor components (SSB - Surface Barrier Detector and PIN photodiodes). A mixed converter made of a borated polyethylene foil (Kodak) was also used. Monte Carlo simulation methodology was employed to evaluate analytically the optimal paraffin thickness. The obtained results were similar to the experimental data and allowed the evaluation of emerging neutron flux from moderator, as well as the fast neutron flux reaching the polyethylene covering the semiconductor sensitive surface. Gamma radiation levels were evaluated covering the whole detector with cadmium foil 1 mm thick, allowing thermal neutrons blockage and gamma radiation measurements. The IPEN/MB-01 facility was employed to evaluate the detector response for high neutron flux. The results were in good agreement with other studies published. Using the obtained spectra an approach to dose equivalent calculation was established. (author)

  16. Effect of trapping of charge carriers on the resolution of Ge(Li) detectors; Influencia da captura de portadores de cargas sobre a resolucao em detectores Ge(Li)

    Energy Technology Data Exchange (ETDEWEB)

    Venturini, Luzia

    1979-07-01

    In this work a measurement is described of the variation of the resolution of a Ge(Li) detector as a function of the position of irradiation of a collimated gamma-ray beam. Also the variation of the resolution has been measured as a function of the applied detector voltage, using a collimated and a non-collimated gamma-ray beam. The measurement indicate that in the process of charge collection loss of holes predominates and the best resolution is obtained in the middle of the compensated region. It has been verified that, in the case of a collimated gamma beam the detector resolution improves with increasing detector bias up to at least 5100 Volts. For a non-collimated gamma beam, however, the resolution reaches a constant value at about 4400 Volts. The dependence of resolution on the position of irradiation can be accounted for by introducing a local ionization factor different from the usual position independent Fano factor. (author)

  17. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    OpenAIRE

    Pan, Hsuan-yu

    2010-01-01

    This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

  18. Spectroscopic Imaging Using Ge and CdTe Based Detector Systems for Hard X-ray Applications

    Science.gov (United States)

    Astromskas, Vytautas

    Third generation synchrotron facilities such as the Diamond Light Source (DLS) have a wide range of experiments performed for a wide range of science fields. The DLS operates at energies up to 150 keV which introduces great challenges to radiation detector technology. This work focuses on the requirements that the detector technology faces for X-ray Absorption Fine Structure (XAFS) and powder diffraction experiments in I12 and I15 beam lines, respectively. A segmented HPGe demonstrator detector with in-built charge sensitive CUBE preamplifiers and a Schottky e- collection CdTe Medipix3RX detector systems were investigated to understand the underlying mechanisms that limit spectroscopic, imaging performances and stability and to find ways to overcome or minimise those limitations. The energy resolution and stability of the Ge demonstrator detector was found to have the required characteristics for XAFS measurements. Charge sharing was identified as a limiting factor to the resolution which is going to be addressed in the future development of a full detector system as well as reductions in electronic noise and cross-talk effects. The stability study of the Schottky CdTe Medipix3RX detector showed that polarization is highly dependent on temperature, irradiation duration and incoming flux. A new pixel behaviour called tri-phase (3-P) pixel was identified and a novel method for determining optimum operational conditions was developed. The use of the 3-P pixels as a criterion for depolarization resulted in a stable performance of the detector. Furthermore, the detector was applied in powder diffraction measurement at the I15 beam line and resulted in the detector diffraction pattern matching the simulated data. CdTe Medipix3RX and HEXITEC spectroscopic imaging detectors were applied in identification and discrimination of transitional metals for security application and K-edge subtraction for medical applications. The results showed that both detectors have potential

  19. GAUSS VII: a computer program for the analysis of #betta#-ray spectra from Ge semiconductor spectrometers

    International Nuclear Information System (INIS)

    McCullagh, C.M.; Helmer, R.G.

    1982-10-01

    A description is given of a computer program, GAUSS VII, which has been written to determine #betta#-ray spectra from Ge semiconductor spectrometers. The preliminary portions of the program can determine the energy and width calibration equations, loacte individual peaks and define peak regions that are significantly above the local spectral background. The user may edit these lists of peaks and regions. Each peak region is fitted with one or more components in which the peaks are represented by a Gaussian function or a Gaussian with one or two additive exponential tails on the low-energy side and one on the high-energy side. A step-like background function can be used with each component. The program will automatically recycle to add one or more components to a region if needed to improve the fit. The #betta#-ray energies and intensities are computed from resulting Gaussian positions and peak areas. To allow the user to determine the best results, the results from the analyses for each region with different numbers of components can be printed and line-printer plots of the fits to the data can be made. The quality of the results depends primarily on the ability of the program to define a good spectral region for each analysis and the ability to recycle to determine the proper number of components

  20. GELATIO: a general framework for modular digital analysis of high-purity Ge detector signals

    International Nuclear Information System (INIS)

    Agostini, M; Pandola, L; Zavarise, P; Volynets, O

    2011-01-01

    GELATIO is a new software framework for advanced data analysis and digital signal processing developed for the GERDA neutrinoless double beta decay experiment. The framework is tailored to handle the full analysis flow of signals recorded by high purity Ge detectors and photo-multipliers from the veto counters. It is designed to support a multi-channel modular and flexible analysis, widely customizable by the user either via human-readable initialization files or via a graphical interface. The framework organizes the data into a multi-level structure, from the raw data up to the condensed analysis parameters, and includes tools and utilities to handle the data stream between the different levels. GELATIO is implemented in C++. It relies upon ROOT and its extension TAM, which provides compatibility with PROOF, enabling the software to run in parallel on clusters of computers or many-core machines. It was tested on different platforms and benchmarked in several GERDA-related applications. A stable version is presently available for the GERDA Collaboration and it is used to provide the reference analysis of the experiment data.

  1. GELATIO: a general framework for modular digital analysis of high-purity Ge detector signals

    Science.gov (United States)

    Agostini, M.; Pandola, L.; Zavarise, P.; Volynets, O.

    2011-08-01

    GELATIO is a new software framework for advanced data analysis and digital signal processing developed for the GERDA neutrinoless double beta decay experiment. The framework is tailored to handle the full analysis flow of signals recorded by high purity Ge detectors and photo-multipliers from the veto counters. It is designed to support a multi-channel modular and flexible analysis, widely customizable by the user either via human-readable initialization files or via a graphical interface. The framework organizes the data into a multi-level structure, from the raw data up to the condensed analysis parameters, and includes tools and utilities to handle the data stream between the different levels. GELATIO is implemented in C++. It relies upon ROOT and its extension TAM, which provides compatibility with PROOF, enabling the software to run in parallel on clusters of computers or many-core machines. It was tested on different platforms and benchmarked in several GERDA-related applications. A stable version is presently available for the GERDA Collaboration and it is used to provide the reference analysis of the experiment data.

  2. Highly accurate determination of relative gamma-ray detection efficiency for Ge detector and its application

    International Nuclear Information System (INIS)

    Miyahara, H.; Mori, C.; Fleming, R.F.; Dewaraja, Y.K.

    1997-01-01

    When quantitative measurements of γ-rays using High-Purity Ge (HPGe) detectors are made for a variety of applications, accurate knowledge of oy-ray detection efficiency is required. The emission rates of γ-rays from sources can be determined quickly in the case that the absolute peak efficiency is calibrated. On the other hand, the relative peak efficiencies can be used for determination of intensity ratios for plural samples and for comparison to the standard source. Thus, both absolute and relative detection efficiencies are important in use of γ-ray detector. The objective of this work is to determine the relative gamma-ray peak detection efficiency for an HPGe detector with the uncertainty approaching 0.1% . We used some nuclides which emit at least two gamma-rays with energies from 700 to 2400 keV for which the relative emission probabilities are known with uncertainties much smaller than 0.1%. The relative peak detection efficiencies were calculated from the measurements of the nuclides, 46 Sc, 48 Sc, 60 Co and 94 Nb, emitting two γ- rays with the emission probabilities of almost unity. It is important that various corrections for the emission probabilities, the cascade summing effect, and the self-absorption are small. A third order polynomial function on both logarithmic scales of energy and efficiency was fitted to the data, and the peak efficiency predicted at certain energy from covariance matrix showed the uncertainty less than 0.5% except for near 700 keV. As an application, the emission probabilities of the 1037.5 and 1212.9 keV γ-rays for 48 Sc were determined using the function of the highly precise relative peak efficiency. Those were 0.9777+0,.00079 and 0.02345+0.00017 for the 1037.5 and 1212.9 keV γ-rays, respectively. The sum of these probabilities is close to unity within the uncertainty which means that the certainties of the results are high and the accuracy has been improved considerably

  3. Measurement stand for diagnosis of semiconductor detectors based on IBM PC/XT computer (4-way spectrometric analysis of pulses)

    International Nuclear Information System (INIS)

    Gruszecki, M.

    1990-01-01

    The technical assumptions and partial realization of our technological stand for quality inspection of semiconductor detectors for ionizing radiation manufactured in the INP in Cracow are described. To increase the efficiency of the measurements simultaneous checking of 4 semiconductor chips or finished products is suggested. In order to justify this measurement technique a review of possible variants of the measurement apparatus is presented for the systems consisting of home made units. Comparative parameters for the component modules and for complete measuring systems are given. The construction and operation of data acquisition system based on IBM PC/XT are described. The system ensures simultaneous registration of pulses obtained from 4 detectors with maximal rate of up to 500 x 10 3 pulses/s. 42 refs., 6 figs., 3 tabs. (author)

  4. Metoda pentru analiza spectrometrica cu detector de Ge(Li) a probelor de trasori radioactivi cu rasini schimbatoare de ioni

    International Nuclear Information System (INIS)

    Stanescu, S.P.; Farcasiu, O.M.

    1981-07-01

    The radioactive tracers methods presently in use in hydrology are based on ''in situ'' low resolution gamma-ray spectrometry measurements. However sometimes the information obtained in this way is not conclusive and the need for better spectrometry systems is evident. Therefore the authors present a method for measuring in laboratory conditions samples of radioactive tracers collected ''in situ'' and concentrated on ions exchange resins, sing low level gamma-ray spectrometry with Ge(Li) detector. The advantages of this method in comparison with the methods based on Na(Tl) detectors are also presented in the paper. (authors)

  5. GERDA, a GERmanium Detector Array for the search for neutrinoless ββ decay in 76Ge

    International Nuclear Information System (INIS)

    Pandola, L.; Tomei, C.

    2006-01-01

    The GERDA project, searching for neutrinoless double beta-decay of 76Ge with enriched germanium detectors submerged in a cryogenic bath, has been approved for installation at the Gran Sasso National Laboratory (LNGS), Italy. The GERDA technique is aiming at a dramatic reduction of the background due to radioactive contaminations of the materials surrounding the detectors. This will lead to a sensitivity of about 1026 years on the half-life of neutrinoless double beta decay. Already in the first phase of the experiment, GERDA will be able to investigate with high statistical significance the claimed evidence for neutrinoless double beta decay of 76Ge based on the data of the Heidelberg-Moscow experiment

  6. Measurement of Gamma Spectrum at domestic Nuclear Power Plant with CZT Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Kon, Kang Seo; Yoon, Kang Hwa; Lee, Byoung Il; Kim, Jeong In [KHNP, Radiation Health Research Institute, Seoul (Korea, Republic of)

    2013-10-15

    In this study we monitored gamma spectrum for young S/G to see difference of the detected nuclides between old and young S/G. The detected source terms were the same for all measurement points. There is not comparison of quantity among the nuclides. The program which analyzes gamma spectrum to calculate activity and dose rate is under developing. We expect it will be done by end of this year. In this study we could see the difference of detected nuclides between old and new S/G for the first time whereas last measurement has significant meaning in that the measurement was taken for the first time all over country. Monitoring sources terms at Nuclear Power Plant(NPP) is important to aggressive ALARA activities and evaluation of exposure of workers. EDF (Electricite de France) and AEP (American Electric Power) conduct monitoring source terms using by CZT semiconductor detector. CZT is different from HPGe in that it does not need any cooling system at room temperature, it has good energy resolution and it can be made portable type easily. For these reason CZT is used in various fields commercially to measure gamma ray and therefore KHNP(Korea Hydro and Nuclear Power Co., LTD) RHRI(Radiation Health Research Institute) has been measuring gamma spectrum at domestic NPP last spring. We had have presented the first result through the last Transactions of the Korean Nuclear Society Spring Meeting for old S/G(Steam Generator)

  7. Improvements in Applied Gamma-Ray Spectrometry with Germanium Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Brune, D; Hellstroem, S [AB Atomenergi, Nykoeping (Sweden); Dubois, J [Chalmers University of Technology, Goeteborg (Sweden)

    1965-01-15

    A germanium semi-conductor detector has in the present investigation been used in four cases of applied gamma-ray spectrometry. In one case the weak-activity contribution of Cs{sup 134} in Cs{sup 137} standard sources has been determined. The second case concerns the determination of K{sup 42} in samples of biological origin containing strong Na{sup 24} activities. In the third case the Nb{sup 94} and Nb{sup 95} activities from neutron-irradiated niobium foils used in the dosimetry of high neutron fluxes with long exposure times have been completely resolved and it has been possible to determine the ratio of the two activities with a high degree of accuracy. Finally, a Zr{sup 95} - Nb{sup 95} source has been analysed in a similar way with respect to its radiochemical composition. The resolution obtained also made possible a determination of the branching ratio of the two gamma-transitions in Zr{sup 95} and of the energies of the gamma-transitions of both nuclides.

  8. A novel integrated circuit for semiconductor radiation detectors with sparse readout

    International Nuclear Information System (INIS)

    Zhang Yacong; Chen Zhognjian; Lu Wengao; Zhao Baoying; Ji Lijiu

    2008-01-01

    A novel fully integrated CMOS readout circuit for semiconductor radiation detector with sparse readout is presented. The new sparse scheme is: when one channel is being read out, the trigger signal from other channels is delayed and then processed. Therefore, the dead time is reduced and so is the error rate. Besides sparse readout, sequential readout is also allowed, which means the analog voltages and addresses of all the channels are read out sequentially once there is a channel triggered. The circuit comprises Charge Sensitive Amplifier (CSA), pulse shaper, peak detect and hold circuit, and digital logic. A test chip of four channels designed in a 0.5 μ DPTM CMOS technology has been taped out. The results of post simulation indicate that the gain is 79.3 mV/fC with a linearity of 99.92%. The power dissipation is 4 mW per channel. Theory analysis and calculation shows that the error probability is approximately 2.5%, which means a reduction of about 37% is obtained compared with the traditional scanning scheme, assuming a 16-channel system with a particle rate of 100 k/s per channel. (authors)

  9. Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV

    Science.gov (United States)

    Cho, T.; Sakamoto, Y.; Hirata, M.; Kohagura, J.; Makino, K.; Kanke, S.; Takahashi, K.; Okamura, T.; Nakashima, Y.; Yatsu, K.; Tamano, T.; Miyoshi, S.

    1997-01-01

    For the purpose of plasma-ion-energy analyses in a wide-energy range from a few hundred eV to hundreds of keV, upgraded semiconductor detectors are newly fabricated and characterized using a test-ion-beam line from 0.3 to 12 keV. In particular, the detectable lowest-ion energy is drastically improved at least down to 0.3 keV; this energy is one to two orders-of-magnitude better than those for commercially available Si-surface-barrier diodes employed for previous plasma-ion diagnostics. A signal-to-noise ratio of two to three orders-of-magnitude better than that for usual metal-collector detectors is demonstrated for the compact-sized semiconductor along with the availability of the use under conditions of a good vacuum and a strong-magnetic field. Such characteristics are achieved due to the improving methods of the optimization of the thicknesses of a Si dead layer and a SiO2 layer, as well as the nitrogen-doping technique near the depletion layer along with minimizing impurity concentrations in Si. Such an upgraded capability of an extremely low-energy-ion detection with the low-noise characteristics enlarges research regimes of plasma-ion behavior using semiconductor detectors not only in the divertor regions of tokamaks but in wider spectra of open-field plasma devices including tandem mirrors. An application of the semiconductor ion detector for plasma-ion diagnostics is demonstrated in a specially designed ion-spectrometer structure.

  10. Semiconductor-based experiments for neutrinoless double beta decay search

    International Nuclear Information System (INIS)

    Barnabé Heider, Marik

    2012-01-01

    Three experiments are employing semiconductor detectors in the search for neutrinoless double beta (0νββ) decay: COBRA, Majorana and GERDA. COBRA is studying the prospects of using CdZnTe detectors in terms of achievable energy resolution and background suppression. These detectors contain several ββ emitters and the most promising for 0νββ-decay search is 116 Cd. Majorana and GERDA will use isotopically enriched high purity Ge detectors to search for 0νββ-decay of 76 Ge. Their aim is to achieve a background ⩽10 −3 counts/(kg⋅y⋅keV) at the Q improvement compared to the present state-of-art. Majorana will operate Ge detectors in electroformed-Cu vacuum cryostats. A first cryostat housing a natural-Ge detector array is currently under preparation. In contrast, GERDA is operating bare Ge detectors submerged in liquid argon. The construction of the GERDA experiment is completed and a commissioning run started in June 2010. A string of natural-Ge detectors is operated to test the complete experimental setup and to determine the background before submerging the detectors enriched in 76 Ge. An overview and a comparison of these three experiments will be presented together with the latest results and developments.

  11. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L

    2001-05-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO{sub 2} layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

  12. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    International Nuclear Information System (INIS)

    Normand, P.; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L.

    2001-01-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO 2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing

  13. Ge{sub 1−x}Si{sub x} on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang-Chun, E-mail: changchunlee@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Hsieh, Chia-Ping [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China); Huang, Pei-Chen; Cheng, Sen-Wen [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Liao, Ming-Han [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China)

    2016-03-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge{sub 1−x}Si{sub x} alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge{sub 1−x}Si{sub x} alloys, namely, Ge{sub 0.96}Si{sub 0.04}, Ge{sub 0.93}Si{sub 0.07}, and Ge{sub 0.86}Si{sub 0.14}, are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge{sub 1−x}Si{sub x} alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge{sub 0.86}Si{sub 0.14} stressor within the device channel. Furthermore, the stresses (S{sub yy}) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge{sub 1−x}Si{sub x} alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n

  14. The importance of the time scale in radiation detection exemplified by comparing conventional and avalache semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Tove, P A; Cho, Z H; Huth, G C [California Univ., Los Angeles (USA). Lab. of Nuclear Medicine and Radiation Biology

    1976-02-01

    The profound importance of the time scale of a radiation detection process is discussed in an analysis of limitations in energy resolution and timing, with emphasis on semiconductor detectors used for X-ray detection. The basic event detection time involves stopping of the particle and creating a distribution of free electrons and holes containing all desired information (energy, time position) about the particle or quantum, in a time approximately equal to 10/sup -12/s. The process of extracting this information usually involves a much longer time because the signal is generated in the relatively slow process of charge collection, and further prolongation may be caused by signal processing required to depress noise for improving energy resolution. This is a common situation for conventional semiconductor detectors with external amplifiers where time constants of 10/sup -5/-10/sup -4/s may be optimum, primarily because of amplifier noise. A different situation applies to the avalanche detector where internal amplification helps in suppressing noise without expanding the time scale of detections, resulting in an optimum time of 10/sup -9/-10/sup -8/s. These two cases are illustrated by plotting energy resolution vs. time constant, for different magnitudes of the parallel and series type noise sources. The effects of the inherent energy spread due to statistips and spatial inhomogeneities are also discussed to illustrate the potential of these two approaches for energy and time determination. Two constructional approaches for avalanche detectors are briefly compared.

  15. Application of the A/E pulse shape discrimination method to first Ge-76 enriched BEGe detectors operated in GERDA

    Energy Technology Data Exchange (ETDEWEB)

    Lazzaro, Andrea; Agostini, Matteo; Budjas, Dusan; Schoenert, Stefan [Physik-Department E15, Technische Universitaet Muenchen (Germany); Collaboration: GERDA-Collaboration

    2013-07-01

    In 2013 the Gerda experiment will be upgraded to its second phase with more than double of the current {sup 76}Ge mass. The additional diodes are custom made Broad Energy Germanium (BEGe) detectors. This design has been chosen to enhance the pulse shape discrimination (PSD) capability, with respect to the Phase I coaxial detectors. The goal of Phase II is to improve by one order of magnitude the current background index; the PSD will bring a major contribution to this result. Since summer 2012 the first set of five enriched BEGe detectors are operated in Gerda Phase I. This offers us the possibility to test the PSD performances and the signal analysis in an environment as close as possible to the Gerda Phase II configuration. In this talk I present the A/E analysis, the calibration of the cut parameters and the results in terms of background reduction for the data taken with these enriched BEGe.

  16. Detector response of the PHENIX Muon Piston Colorimeter for √{Snn} = 200 GeV Au+Au collisons

    Science.gov (United States)

    Kimelman, Benjamin; Phenix Collaboration

    2013-10-01

    Transverse energy is often used to characterize the energy density in ultra-relativistic heavy ion collisions. Most measurements are obtained in the the central rapidity region; however, the PHENIX Muon Piston Calorimeter (MPC), a homogeneous electromagnetic calorimeter, is a useful tool for measuring this quantity in the forward/backward pseudo-rapidity regions. A full Geant3 detector simulation is used for assessing detector response and the effects of particle decays on the measurement of transverse energy in the pseudo-rapidity range 3 . 1 < | η | < 3 . 9 . In 2010, √{SNN} = 200 GeV Au+Au collisons were obtained and are being analyzed. Various event generators are used as input to the detector simulation to help determine the effects of inflow, outflow, and hadronic response of the MPC. We gratefully acknowledge support from NSF grant number 1209240.

  17. GAUSS VIII: a computer program for the nuclide activity analysis of γ-ray spectra from GE semiconductor spectrometers

    International Nuclear Information System (INIS)

    Putman, M.H.; Helmer, R.G.; McCullagh, C.M.

    1985-12-01

    A description is given of a computer program, GAUSS VII, which has been written to determine nuclide or isotopic activities from γ-ray spectra from GE semiconductor spectrometers. The preliminary portion of the program can determine the energy- and width-calibration equations, locate individual peaks and define ''peak regions'' that are significantly above the local spectral background. The user may edit these lists of peaks and regions. Each peak region is fitted with one or more components in which the peaks are represented by a Gaussian function or a Gaussian with one or two additive exponential tails on the low-energy side and one on the high-energy side. A step-like background function can be used with each component. The program will automatically recycle to add one or more components to a region if needed to improve the fit. The γ-ray energies and intensities are computed from the resulting Gaussian positions and peak areas. From a comparison of these peak energies and the γ-ray energies for various nuclides in a nuclide library, the nuclides that may be present are identified. The user may edit this nuclide list. The program identifies secondary γ rays that should be present for these nuclides and obtains peak areas for them, if the areas are not already available. All of the peak areas are then analyzed to obtain the best nuclidic activities. The peak areas for any one nuclide and those for nuclides that have interfering lines are analyzed in one least-squares ft. Nuclides whose activities are essentially 0, and peaks which cannot be accounted for are removed from the analysis. Besides the nuclidic activities, a peak-by-peak summary is provided. This program is intended to analyze large groups of spectra as well as an individual spectrum

  18. The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Ruddy, Frank H.; Seidel, John G.

    2007-01-01

    Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 deg. C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of 137 Cs gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress

  19. Design and operation of a 2-D thin-film semiconductor neutron detector array for use as a beamport monitor

    International Nuclear Information System (INIS)

    Unruh, Troy C.; Bellinger, Steven L.; Huddleston, David E.; McNeil, Walter J.; Patterson, Eric; Sobering, Tim J.; McGregor, Douglas S.

    2009-01-01

    Silicon-based diodes coated with a thin film of neutron reactive materials have been shown to produce excellent low-efficiency neutron detectors. This work employs the same technology, but groups 25 equally sized and spaced diodes on a single 29 mm by 29 mm substrate. A 5x5 array was fabricated and coated with a thin film of 6 LiF for use as a low-efficiency neutron beam monitor. The 5x5 neutron detector array is coupled to an array of amplifiers, allowing the response to be interpreted using a LabVIEW FPGA. The 5x5 array has been characterized in a diffracted neutron beam. This work is a part of on-going research to develop various designs of high- and low-efficiency semiconductor neutron detectors.

  20. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sherchenkov, A. A. [National Research University of Electronic Technology (Russian Federation); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Lazarenko, P. I.; Babich, A. V. [National Research University of Electronic Technology (Russian Federation); Bogoslovskiy, N. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sagunova, I. V.; Redichev, E. N. [National Research University of Electronic Technology (Russian Federation)

    2017-02-15

    The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.

  1. Ninth degree polynomial fit function for calculation of efficiency calibrations for Ge(Li) and HPGe detectors

    International Nuclear Information System (INIS)

    Uosif, M.A.M.

    2006-01-01

    A new 9 th degree polynomial fit function has been constructed to calculate the absolute γ-ray detection efficiencies (ηth) of Ge(Li) and HPGe Detectors, for calculating the absolute efficiency at any interesting γ-energy in the energy range between 25 and 2000 keV and distance between 6 and 148 cm. The total absolute γ -ray detection efficiencies have been calculated for six detectors, three of them are Ge(Li) and three HPGe at different distances. The absolute efficiency of the different detectors was calculated at the specific energy of the standard sources for each measuring distances. In this calculation, experimental (η e xp) and fitting (η f it) efficiency have been calculated. Seven calibrated point sources Am-241, Ba-133, Co-57, Co-60, Cs-137, Eu-152 and Ra-226 were used. The uncertainties of efficiency calibration have been calculated also for quality control. The measured (η e xp) and (η f it) calculated efficiency values were compared with efficiency, which calculated, by Gray fit function (time)- The results obtained on the basis of (η e xp)and (η f it) seem to be in very good agreement

  2. Verification of the plan dosimetry for high dose rate brachytherapy using metal-oxide-semiconductor field effect transistor detectors

    International Nuclear Information System (INIS)

    Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Lu Jie; Lerch, Michael; Cutajar, Dean; Rosenfeld, Anatoly

    2007-01-01

    The feasibility of a recently designed metal-oxide-semiconductor field effect transistor (MOSFET) dosimetry system for dose verification of high dose rate (HDR) brachytherapy treatment planning was investigated. MOSFET detectors were calibrated with a 0.6 cm 3 NE-2571 Farmer-type ionization chamber in water. Key characteristics of the MOSFET detectors, such as the energy dependence, that will affect phantom measurements with HDR 192 Ir sources were measured. The MOSFET detector was then applied to verify the dosimetric accuracy of HDR brachytherapy treatments in a custom-made water phantom. Three MOSFET detectors were calibrated independently, with the calibration factors ranging from 0.187 to 0.215 cGy/mV. A distance dependent energy response was observed, significant within 2 cm from the source. The new MOSFET detector has a good reproducibility ( 2 =1). It was observed that the MOSFET detectors had a linear response to dose until the threshold voltage reached approximately 24 V for 192 Ir source measurements. Further comparison of phantom measurements using MOSFET detectors with dose calculations by a commercial treatment planning system for computed tomography-based brachytherapy treatment plans showed that the mean relative deviation was 2.2±0.2% for dose points 1 cm away from the source and 2.0±0.1% for dose points located 2 cm away. The percentage deviations between the measured doses and the planned doses were below 5% for all the measurements. The MOSFET detector, with its advantages of small physical size and ease of use, is a reliable tool for quality assurance of HDR brachytherapy. The phantom verification method described here is universal and can be applied to other HDR brachytherapy treatments

  3. Electric field distribution and the charge collection process in not-ideally compensated coaxial Ge(Li) detectors

    International Nuclear Information System (INIS)

    Szymczyk, W.M.; Moszynski, M.

    1978-01-01

    The not-ideally compensated space charge of donors and acceptors in lithium-drifted coaxial Ge(Li) detectors can modify the electric field distribution in the detector depleted volume, and influence in this way the charge collection process. Observations of the capacity, the time of charge collection (transit time), and the relative efficiency characteristics vs. detector bias voltage, showed that in conventional pin + coaaxial structures an undercompensation near the inner p-type core was typical. It was found that such an undercompensation had negligible consequences from the charge collection point of view. However, one case was observed where the modification near the outer electrode was present. In that case the charge pulses with remarkably increased rise-times were observed, as compared to the predictions based on the assumption of the classical, E proportional to 1/r, electric field distribution. The pulses expected from not-ideally compensated detectors were calculated using the Variable Velocity Approximation. The pulses expected from and much better agreement with the observed pulses was obtained. The calculated and observed dependencies of the charge transit times vs. reciprocal of the detector bias voltage exhibited, in the absence of the outer-electrode modification, linear parts. Measurement of their slopes permitted to find experimentally the depletion layer width provided the charge carriers mobility value was known, or vice versa. (Auth.)

  4. A simple semi-empirical way of accounting for the contribution of pair production process to the efficiency of Ge detectors

    International Nuclear Information System (INIS)

    Sudarshan, M.; Singh, R.

    1991-01-01

    By considering the data for a 38cm 3 Ge(Li) detector from E γ = 319.80 to 2598.80 keV, and for a 68 cm 3 HPGe detector from E γ = 223.430 to 3253.610 keV, it has been demonstrated that the contribution of the pair production process to the full energy peak efficiency (FEPE) of germanium detectors can be quite adequately accounted for in a semi-empirical way. (author)

  5. First-principles study of defect formation in a photovoltaic semiconductor Cu2ZnGeSe4

    Science.gov (United States)

    Nishihara, Hironori; Maeda, Tsuyoshi; Wada, Takahiro

    2018-02-01

    The formation energies of neutral Cu, Zn, Ge, and Se vacancies in kesterite-type Cu2ZnGeSe4 were evaluated by first-principles pseudopotential calculations using plane-wave basis functions. The calculations were performed at typical points in Cu-(Zn1/2Ge1/2)-Se and Cu3Se2-ZnSe-GeSe2 pseudoternary phase diagrams for Cu2ZnGeSe4. The results were compared with those for Cu2ZnSnSe4, Cu2ZnGeS4, and Cu2ZnSnS4 calculated using the same version of the CASTEP program code. The results indicate that Cu vacancies are easily formed in Cu2ZnGeSe4 under the Cu-poor condition as in the above compounds and CuInSe2, suggesting that Cu2ZnGeSe4 is also a preferable p-type absorber material for thin-film solar cells. The formation energies of possible antisite defects, such as CuZn and CuGe, and of possible complex defects, such as CuZn+ZnCu, were also calculated and compared within the above materials. The antisite defect of CuZn, which has the smallest formation energy within the possible defects, is concluded to be the most hardly formed in Cu2ZnGeSe4 among the compounds.

  6. Superconducting nanowire single photon detectors fabricated from an amorphous Mo0.75Ge0.25 thin film

    International Nuclear Information System (INIS)

    Verma, V. B.; Lita, A. E.; Vissers, M. R.; Marsili, F.; Pappas, D. P.; Mirin, R. P.; Nam, S. W.

    2014-01-01

    We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo 0.75 Ge 0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.

  7. A hybrid, broadband, low noise charge preamplifier for simultaneous high resolution energy and time information with large capacitance semiconductor detector

    International Nuclear Information System (INIS)

    Goyot, M.

    1975-05-01

    A broadband and low noise charge preamplifier was developed in hybrid form, for a recoil spectrometer requiring large capacitance semiconductor detectors. This new hybrid and low cost preamplifier permits good timing information without compromising energy resolution. With a 500 pF external input capacity, it provides two simultaneous outputs: (i) the faster, current sensitive, with a rise time of 9 nsec and 2 mV/MeV on 50 ohms load, (ii) the lower, charge sensitive, with an energy resolution of 14 keV (FWHM Si) using a RC-CR ungated filter of 2 μsec and a FET input protection [fr

  8. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    International Nuclear Information System (INIS)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.

    2010-01-01

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  9. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G. [Institute of Biophysics, Imaging and Optical Science, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom); Sharples, Steve D. [Applied Optics Group, Electrical Systems and Optics Research Division, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom)

    2010-02-15

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  10. Combined performance tests before installation of the ATLAS Semiconductor and Transition Radiation Tracking Detectors

    Czech Academy of Sciences Publication Activity Database

    Abat, E.; Abdesselam, A.; Andy, T.N.; Böhm, Jan; Šťastný, Jan

    2008-01-01

    Roč. 3, - (2008), P08003/1-P08003/67 ISSN 1748-0221 R&D Projects: GA MŠk LA08032; GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : solid state detectors * particle tracking detectors * large detector systems for particle and astroparticle physics * transition radiation detectors Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 0.333, year: 2008

  11. Outstanding laser damage threshold in Li2MnGeS4 and tunable optical nonlinearity in diamond-like semiconductors.

    Science.gov (United States)

    Brant, Jacilynn A; Clark, Daniel J; Kim, Yong Soo; Jang, Joon I; Weiland, Ashley; Aitken, Jennifer A

    2015-03-16

    The new Li2MnGeS4 and Li2CoSnS4 compounds result from employing a rational and simple design strategy that guides the discovery of diamond-like semiconductors (DLSs) with wide regions of optical transparency, high laser damage threshold, and efficient second-order optical nonlinearity. Single-crystal X-ray diffraction was used to solve and refine the crystal structures of Li2MnGeS4 and Li2CoSnS4, which crystallize in the noncentrosymmetric space groups Pna21 and Pn, respectively. Synchrotron X-ray powder diffraction (SXRPD) was used to assess the phase purity, and diffuse reflectance UV-vis-NIR spectroscopy was used to estimate the bandgaps of Li2MnGeS4 (Eg = 3.069(3) eV) and Li2CoSnS4 (Eg = 2.421(3) eV). In comparison with Li2FeGeS4, Li2FeSnS4, and Li2CoSnS4 DLSs, Li2MnGeS4 exhibits the widest region of optical transparency (0.60-25 μm) and phase matchability (≥1.6 μm). All four of the DLSs exhibit second-harmonic generation and are compared with the benchmark NLO material, AgGaSe2. Most remarkably, Li2MnGeS4 does not undergo two- or three-photon absorption upon exposure to a fundamental Nd:YAG beam (λ = 1.064 μm) and exhibits a laser damage threshold > 16 GW/cm(2).

  12. Measurement of nuclear activity with Ge detectors and its uncertainty; Medicion de actividad nuclear con detectores de Ge y su incertidumbre

    Energy Technology Data Exchange (ETDEWEB)

    Cortes P, C.A

    1999-07-01

    The objective of this work is to analyse the influence magnitudes which affect the activity measurement of gamma transmitter isolated radioactive sources. They prepared by means of the gravimetric method, as well as, determining the uncertainty of such measurement when this is carried out with a gamma spectrometer system with a germanium detector. This work is developed in five chapters: In the first one, named Basic principles it is made a brief description about the meaning of the word Measurement and its implications and the necessaries concepts are presented which are used in this work. In the second chapter it is exposed the gravimetric method used for the manufacture of the gamma transmitter isolated radioactive sources, it is tackled the problem to determine the main influence magnitudes which affect in the measurement of their activity and the respective correction factors and their uncertainties are deduced. The third chapter describes the gamma spectrometry system which is used in this work for the measurement of the activity of isolated sources and also its performance and experimental arrangement that it is used. In the fourth chapter are applied the three previous items with the object of determining the uncertainty which would be obtained in the measurement of an isolated radioactive source elaborated with the gravimetric method in the experimental conditions less favourable predicted above the obtained results from the chapter two. The conclusions are presented in the fifth chapter and they are applied to establish the optimum conditions for the measurement of the activity of a gamma transmitter isolated radioactive source with a spectrometer with germanium detector. (Author)

  13. Radiation detectors

    International Nuclear Information System (INIS)

    2013-01-01

    This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

  14. Analysis and modelling of the performance of a new solid-state detector in nuclear medicine: from Anger- to Semiconductor-detectors

    International Nuclear Information System (INIS)

    Imbert, L.

    2012-01-01

    Myocardial single-photon emission computed tomography (SPECT) is considered as the gold standard for the diagnosis of coronary artery disease. Developed in the 1980's with rotating Anger gamma cameras, this technique could be dramatically enhanced by new imaging systems working with semiconductor detectors and which performances are clearly enhanced. Two semiconductor cameras, dedicated to nuclear cardiology and equipped with Cadmium Zinc Telluride detectors, have been recently commercialized: the Discovery NM- 530c (General Electric) and the DSPECT (Spectrum Dynamics). The performances of these CZT cameras were compared: 1) by a comprehensive analysis of phantom and human SPECT images considered as normal and 2) with the parameters commonly recommended for SPECT recording and reconstruction. The results show the superiority of the CZT cameras in terms of detection sensitivity, spatial resolution and contrast-to-noise ratio, compared to conventional Anger cameras. These properties might lead to dramatically reduce acquisition times and/or the injected activities. However, the limits of these new CZT cameras, as well as the mechanism of certain artefacts, remain poorly known. This knowledge could be enhanced by a numerical modeling of the DSPECT camera, and this might also help to optimize acquisition and reconstruction parameters. We developed a simulator where the geometry of the detectors of the DSPECT camera and their energy response were modeled in the GATE platform. In order to validate this simulator, actually recorded data were compared with simulated data through three performance parameters: detection sensitivity, spatial resolution and energy resolution. Results were in agreement between simulated and actually recorded data. This observation validates the DSPECT simulator and opens the door to further studies planed to optimize the recorded and reconstruction processes, especially for complex protocols such as simultaneous dual-radionuclide acquisition

  15. Sensitivity of a low energy Ge detector system for in vivo monitoring in the framework of ICRP 78 applications.

    Science.gov (United States)

    Lopez, M A; Navarro, T

    2003-01-01

    In in vivo detection of internal contamination by actinides the minimum detectable activities (MDAs) correspond to significant doses, so the sensitivity of the detection system is the key to establishing adequate individual monitoring programmes for internal exposure to these radionuclides. The whole body counting (WBC) faculty at CIEMAT uses a low-energy Ge detector system with different available counting geometries to estimate the retention of actinides in the lungs and evaluate 125I in thyroid and 241Am in bone (skull and knee). A study of the factors and uncertainties involved in estimations of MDA is presented for lung and thyroid monitoring. The dependence of detection limits on counting efficiency in the measurement of low-energy emitters in the lungs has been carefully studied, carrying out a comparison among different biometric equations obtained by ultrasound techniques for estimations of chest wall thickness. Dosimetric implications of the estimated MDAs are taken into account in the framework of ICRP 78 application and considering Spanish regulations. The main interest in lung measurements is for the assessment of occupational exposure. This work confirms the low-energy Ge detector system to be an adequate in vivo technique for the routine monitoring of internal exposure to most insoluble uranium compounds (detection of 3% enriched uranium in lungs), and also to be useful in special monitoring programmes or in the case of incidents when the detection of 241Am is required.

  16. Development of twin Ge detector for high energy photon measurement and its performance

    Energy Technology Data Exchange (ETDEWEB)

    Shigetome, Yoshiaki; Harada, Hideo [Power Reactor and Nuclear Fuel Development Corp., Tokai, Ibaraki (Japan). Tokai Works

    1998-03-01

    Prototype twin HPGe detector composed of two large HPGe crystals was developed to obtain better detection efficiency ({epsilon}) and P/T ratio, which was required for high energy photon spectroscopy. In this work, the performances of the twin HPGe detector were evaluated by computer simulation employing EGS4 code. (author)

  17. Calorimetric low-temperature detectors on semiconductor base for the energy-resolving detection of heavy ions

    International Nuclear Information System (INIS)

    Kienlin, A. von.

    1994-01-01

    In the framework of this thesis for the first time calorimetric low-temperature detectors for the energy-resolving detection of heavy ions were developed and successfully applied. Constructed were two different detector types, which work both with a semiconductor thermistor. The temperature increasement effected by a particle incidence is read out. In the first detector type the thermistor was simutaneously used as absorber. The thickness of the germanium crystals was sufficient in order to stop the studied heavy ions completely. In the second type, a composed calorimeter, a sapphire crystal, which was glued on a germanium thermistor, served as absorber for the incident heavy ions. The working point of the calorimeter lies in the temperature range (1.2-4.2 K), which is reachable with a pumped 4 He cryostat. The temperatur increasement of the calorimeter amounts after the incidence of a single α particle about 20-30 μK and that after a heavy ion incidence up to some mK. An absolute energy resolution of 400-500 keV was reached. In nine beam times the calorimeters were irradiated by heavy ions ( 20 Ne, 40 Ar, 136 Xe, 208 Pb, 209 Bi) of different energies (3.6 MeV/nucleon< E<12.5 MeV/nucleon) elastically scattered from gold foils. In the pulse height spectra of the first detector type relatively broad, complex-structurated line shapes were observed. By systematic measurements dependences of the complex line structures on operational parameters of the detector, the detector temperature, and the position of the incident particle could be detected. Together with the results of further experiments a possible interpretation of these phenomena is presented. Contrarily to the complex line structures of the pure germanium thermistor the line shapes in the pulse height spectra, which were taken up in a composite germanium/sapphire calorimeter, are narrow and Gauss-shaped

  18. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    International Nuclear Information System (INIS)

    Adamian, A.Z.; Adamian, Z.N.; Aroutiounian, V.M.

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi 2 O 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold

  19. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    CERN Document Server

    Adamian, A Z; Aroutiounian, V M

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi sub 2 O sub 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold.

  20. Spectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides

    Science.gov (United States)

    Cheng, Cheng

    Non-crystalline thin film materials are widely used in the semiconductor industry (micro- and optoelectronics) and in green energy, e.g., photovolatic applications. This dissertation under-pins these device application with studies of their electronic structures using derivative X-ray Absorption Spectroscopy (XAS) and derivative Spectroscopic Ellipsometry (SE) for the first time to experimentally determine electronic and intrinsic defect structures. Differences between electron and hole mobilities in c- (and ng-Si) and c- (and ng- Ge), make Ge channels superior to Si channels in for aggressively scaled CMOS field effect transistors (FETs). Bonding between Si and Ge substrates and gate dielectric oxides is the focus this dissertation. The primary objective of this research is to measure and interpret by ab-initio theory the electronic and intrinsic electronic defect structures mirco-electronic thin film materials. This is accomplished for the first time by combining (i) derivative XAS TEY data obtained at the Stanford Synchrotron Radiation Light Source (SSRL) with (ii) derivative Spectroscopic Ellipsometry results obtained at the J.A. Woollam Co. laboratory. All the oxides were deposited in RPECVD system with in-line AES and RHEED. Thins films and gate stacks were annealed in RTA system in Ar to determine temperature dependent changes. 2nd derivative analysis is applied on XAS and SE spectra emphasizing the conduction band (CB) and virtual bound state (VBS) regimes. 2nd derivative SE spectra for ng-Si and ng-Ge each have 3 distinct regimes: (i) 3 excitons, (ii) 2 features in the CB edge region, and (iii) 3 additional exciton features above the IP. Excitonic spectral width provides conductivity electron masses (em0*) and hence electron mobilities. The wider the energy range, the higher the electron mobility in that CB. Spectra of high-K dielectrics have an additional energy regime between the CB edge regime, and the higher eV excitons. This regime has 4 intra-d state

  1. Performance of thallium bromide semiconductor detectors produced by repeated Bridgman method

    International Nuclear Information System (INIS)

    Santos, Robinson Alves dos; Costa, Fabio Eduardo da; Martins, Joao Francisco Trencher; Hamada, Margarida M.

    2009-01-01

    TlBr crystals have been grown by the Repeated Bridgman method from commercial TlBr materials and characterized to be used as radiation detectors. We have shown that the Repeated Bridgman is effective to reduce the concentration of impurities in TlBr. It was observed that detectors fabricated from higher purity crystal exhibit significant improvement in performance compared to those produced from low purity crystals. However, problems still exist in TlBr detectors, due to the low charge carrier collection efficiency, which is probably caused by additional impurities or defects incorporated during crystal growth and detector fabrication processes. (author)

  2. Process allowing the spectral compensation of semi-conductor nuclear detector

    International Nuclear Information System (INIS)

    L'Hote, J.P.

    1987-01-01

    The process includes a discriminator whose threshold level is applied to the detector during a fixed time and is externally controlled by a pre-programmed system; the different threshold levels and their application time to the detector are fixed by the nature of the used detector and by the tolerance allowed on the spectral response. The measurements made for each threshold level are corrected by a coefficient depending on the nature of the used detector and the tolerance on the spectral response [fr

  3. Total cross section measurements for νμ, ν-barμ interactions in 3 - 30 GeV energy range with IHEP - JINR neutrino detector

    International Nuclear Information System (INIS)

    Anikeev, V.B.; Belikov, S.V.; Borisov, A.A.

    1995-01-01

    The results of total cross section measurements for the ν μ , ν-bar μ interactions with isoscalar target in the 3 - 30 GeV energy range have been presented. The data were obtained with the IHEP - JINR Neutrino Detector in the 'natural' neutrino beams of the U - 70 accelerator. The significant deviation from the linear dependence for σ tot versus neutrino energy is determined in the energy range less than 15 GeV. 46 refs., 10 figs., 5 tabs

  4. Method of summation of amplitudes of coinciding pulses from Ge(Li) detectors used to study cascades of gamma-transitions in (n,#betta#) reaction

    International Nuclear Information System (INIS)

    Bogdzel', A.A.; Vasil'eva, Eh.V.; Elizarov, O.I.

    1982-01-01

    Main performanes and peculiarities of spectrometer based on the coincidence pulse amplitude total-count method and containing two Ge(La) detectors with transmission neutron spectrometer - IBR-30 pulse reactor are considered. It is shown on the 35 Cl(n, #betta#) reaction that the method of summalion of amplitudes of coinciding pulses from the Ge(Li) detector can be used to study the cascades of two #betta#-transitions with a total energy similar to the neutron binding energy. The shape of the response function of this spectrometer was studied versus the energies of #betta#-transition cascades

  5. P-N semiconductor junctions used as X-ray detectors

    International Nuclear Information System (INIS)

    Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

    1987-01-01

    The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

  6. Prototyping and tests for an MRPC-based time-of-flight detector for 1 GeV neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Yakorev, D. [Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden (Germany); Aumann, T. [GSI Helmholtz zentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Bemmerer, D., E-mail: d.bemmerer@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden (Germany); Boretzky, K. [GSI Helmholtz zentrum fuer Schwerionenforschung, Darmstadt (Germany); Caesar, C. [GSI Helmholtz zentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Ciobanu, M. [GSI Helmholtz zentrum fuer Schwerionenforschung, Darmstadt (Germany); Cowan, T.; Elekes, Z. [Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden (Germany); Elvers, M. [Universitaet zu Koeln (Germany); Gonzalez Diaz, D. [GSI Helmholtz zentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Tsinghua University, Beijing (China); Hannaske, R. [Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden (Germany); Hehner, J.; Heil, M. [GSI Helmholtz zentrum fuer Schwerionenforschung, Darmstadt (Germany); Kempe, M. [Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden (Germany); Maroussov, V. [Universitaet zu Koeln (Germany); Nusair, O. [GSI Helmholtz zentrum fuer Schwerionenforschung, Darmstadt (Germany); Al Balqa' Applied University, Salt (Jordan); Simon, H. [GSI Helmholtz zentrum fuer Schwerionenforschung, Darmstadt (Germany); Sobiella, M.; Stach, D.; Wagner, A. [Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden (Germany); and others

    2011-10-21

    The NeuLAND detector at the R{sup 3}B experiment at the future FAIR facility in Darmstadt aims to detect fast neutrons (0.2-1.0 GeV) with high time and spatial resolutions ({sigma}{sub t}<100ps,{sigma}{sub x,y,z}<1cm). This task can be performed either with a scintillator or based on the multigap resistive plate chamber (MRPC) technology. Here, prototyping and test for an MRPC-based solution are discussed. In order to reach 90% detection efficiency, the final detector must consist of 50 consecutive MRPC stacks. Each stack contains a 4 mm thick anode made of iron converter material, with an additional 4 mm of converter material between two stacks. The secondary charged particles stemming from hadronic interactions of the high energetic neutrons in the converter will be detected in the MRPCs. As part of the ongoing development effort, a number of prototypes for this detector have been developed and built. They have been tested in experiments with a single-electron beam with picosecond resolution at the superconducting linac ELBE (Dresden, Germany). The results of the tests are presented here, and an outlook is given.

  7. Nucleon-gold collisions at 200 A GeV using tagged d + Au interactions in the PHOBOS detector

    Science.gov (United States)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.; Phobos Collaboration

    2015-09-01

    Forward calorimetry in the PHOBOS detector has been used to study charged hadron production in d +Au , p +Au , and n +Au collisions at √{sN N}=200 GeV . The forward proton calorimeter detectors are described and a procedure for determining collision centrality with these detectors is detailed. The deposition of energy by deuteron spectator nucleons in the forward calorimeters is used to identify p +Au and n +Au collisions in the data. A weighted combination of the yield of p +Au and n +Au is constructed to build a reference for Au +Au collisions that better matches the isospin composition of the gold nucleus. The pT and centrality dependence of the yield of this improved reference system is found to match that of d +Au . The shape of the charged-particle transverse momentum distribution is observed to extrapolate smoothly from p +p ¯ to central d +Au as a function of the charged-particle pseudorapidity density. The asymmetry of positively and negatively charged hadron production in p +Au is compared to that of n +Au . No significant asymmetry is observed at midrapidity. These studies augment recent results from experiments at the CERN Large Hadron Collider and BNL Relativistic Heavy Ion Collider facilities to give a more complete description of particle production in p +A and d +A collisions, essential for the understanding the medium produced in high-energy nucleus-nucleus collisions.

  8. Operational Experience of the ATLAS SemiConductor Tracker and Pixel Detector

    CERN Document Server

    Robinson, Dave; The ATLAS collaboration

    2016-01-01

    The tracking performance of the ATLAS detector relies critically on the silicon and gaseous tracking subsystems that form the ATLAS Inner Detector. Those subsystems have undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the LHC during Run2. The key status and performance metrics of the Pixel Detector and the Semi Conductor Tracker are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described.

  9. K-mean clustering algorithm for processing signals from compound semiconductor detectors

    International Nuclear Information System (INIS)

    Tada, Tsutomu; Hitomi, Keitaro; Wu, Yan; Kim, Seong-Yun; Yamazaki, Hiromichi; Ishii, Keizo

    2011-01-01

    The K-mean clustering algorithm was employed for processing signal waveforms from TlBr detectors. The signal waveforms were classified based on its shape reflecting the charge collection process in the detector. The classified signal waveforms were processed individually to suppress the pulse height variation of signals due to the charge collection loss. The obtained energy resolution of a 137 Cs spectrum measured with a 0.5 mm thick TlBr detector was 1.3% FWHM by employing 500 clusters.

  10. Development of bonded semiconductor device for high counting rate high efficiency photon detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo

    2008-01-01

    We are trying to decrease dose exposure in medical diagnosis by way of measuring the energy of X-rays. For this purpose, radiation detectors for X-ray energy measurement with high counting rate should be developed. Direct bonding of Si wafers was carried out to make a radiation detector, which had separated X-ray absorber and detector. The resistivity of bonding interface was estimated with the results of four-probe measurements and model calculations. Direct bonding of high resistivity p and n-Si wafers was also performed. The resistance of the pn bonded diode was 0.7 MΩ. The resistance should be increased in the future. (author)

  11. Measurement of the properties of the 125 GeV Higgs boson with the CMS detector

    CERN Document Server

    Varela, Joao

    2013-01-01

    The measurement of the properties of the recently discovered boson is central to the LHC physics program. In this contribution we review preliminary measurements of the properties of the new 125 GeV boson performed by the CMS experiment using the full proton-proton dataset collected in 2011-12 (~25 fb-1). In the H to ZZ(4l) channel, a signal significance of 6.7 sigma is now observed. In the other high-resolution mode, H to two-photon, updated results were obtained on the signal strength which is now measured to be 0.8+-0.3. The two high-resolution modes allowed independent determinations of the Higgs mass 125.8+-0.6 GeV, in H to ZZ(4l); and 125.4+-0.8 GeV, in H to two-photon. The four-lepton channel permitted tests of the spin-parity of the new boson. From these studies, the pure pseudoscalar hypothesis is excluded at 99.8pct C.L. and, for the first time, simple spin 2 models are excluded with greater than 98.5pct C.L. Significantly, strong evidence is seen in a fermionic decay mode of the Higgs for the firs...

  12. Liquid argon as an electron/photon detector in the energy range of 50 MeV to 2 GeV: a Monte Carlo investigation

    International Nuclear Information System (INIS)

    Goodman, M.S.; Denis, G.; Hall, M.; Karpovsky, A.; Wilson, R.; Gabriel, T.A.; Bishop, B.L.

    1980-12-01

    Monte Carlo techniques which have been used to study the characteristics of a proposed electron/photon detector based on the total absorption of electromagnetic showers in liquid argon have been investigated. The energy range studied was 50 MeV to 2 GeV. Results are presented on the energy and angular resolution predicted for the device, along with the detailed predictions of the transverse and longitudinal shower distributions. Comparisons are made with other photon detectors, and possible applications are discussed

  13. Segmented quasi-coaxial HP-Ge detectors optimized for spatial localization of the events

    International Nuclear Information System (INIS)

    Ripamonti, Giancarlo; Pulici, Paolo; Abbiati, Roberto

    2006-01-01

    A methodology for the design of segmented high purity Germanium detectors is presented. Its motivation follows from the necessity of making it easier to derive fast algorithms for measuring the gamma-detector interaction position. By using our study, detector geometries can be designed, which could allow a first estimate of the interaction coordinate along the carrier drift direction by analyzing the shape of the signal of a single segment. The maximum resolution that can be achieved and the corresponding conditions for the electronics are highlighted: basic unavoidable constraints limit the resolution to around 3 mm, but this first position estimate can be used, at least in principle, as a starting point for more accurate, although computationally heavy, algorithms

  14. Averaged currents induced by alpha particles in an InSb compound semiconductor detector

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Hishiki, Shigeomi; Kogetsu, Yoshitaka; Nakamura, Tatsuya; Katagiri, Masaki

    2008-01-01

    Very fast pulses due to alpha particle incidence were observed by an undoped-type InSb Schottky detector. This InSb detector was operated without applying bias voltage and its depletion layer thickness was less than the range of alpha particles. The averaged current induced by alpha particles was analyzed as a function of operating temperature and was shown to be proportional to the Hall mobility of InSb. (author)

  15. Development of semiconductor ΔE-E detector chip using standard bipolar IC technology

    International Nuclear Information System (INIS)

    Mishra, Vijay; Kataria, S.K.

    2005-01-01

    A proposal has been made for developing silicon based AE-E detector chip which can be used as particle identifiers in nuclear physics experiments and also in several applications in nuclear industry scenario. The proposed development work employs standard bipolar IC fabrication technology of Bharat Electronics Ltd. and the deliverable products that emerge out will be very cost effective. The present paper discusses the concept, feasibility studies and systematic plan for fabrication, characterization and packaging of the proposed detectors. (author)

  16. Development of TiBr semiconductor crystal for applications as radiation detector and photodetector

    International Nuclear Information System (INIS)

    Oliveira, Icimone Braga de

    2006-01-01

    In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by 241 Am (59 keV), 133 Ba (80 e 355 keV), 57 Co (122 keV), 22 Na (511 keV) and 137 Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

  17. Solid-State Neutron Multiplicity Counting System Using Commercial Off-the-Shelf Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Rozhdestvenskyy, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-08-09

    This work iterates on the first demonstration of a solid-state neutron multiplicity counting system developed at Lawrence Livermore National Laboratory by using commercial off-the-shelf detectors. The system was demonstrated to determine the mass of a californium-252 neutron source within 20% error requiring only one-hour measurement time with 20 cm2 of active detector area.

  18. Silicon radiation detectors

    International Nuclear Information System (INIS)

    Lutz, G.

    1995-01-01

    An introduction to and an overview of function principles and properties of semiconductor radiation detectors is attempted. The paper is addressed to people interested in detector development but not already experts in the field of semiconductor detectors. (orig.)

  19. Determination of gamma emitting radionuclides in environmental air and precipitation samples with a Ge(Li) detector

    International Nuclear Information System (INIS)

    Hoetzl, H.; Rosner, G.; Winkler, R.; Sansoni, B.

    1977-01-01

    The concentrations of the radionuclides 7 Be, 54 Mn, 95 Zr, 95 Nb, 103 Ru, 106 Ru, 125 Sb, 137 Cs, 140 Ba/ 140 La, 141 Ce and 144 Ce in ground level air and of 7 Be, 95 Zr, 137 Cs and 144 Ce in precipitation were determined since 1970 and 1971 respectively at Neuherberg, 10 km north of Munich, by gamma spectrometry using a 60 cm 3 Ge(Li) detector. Dust samples were collected twice a month 1 m above ground from about 40,000 m 3 of air on 46 cm x 28 cm microsorbane filters and pressed to small cylinders of 35 cm 3 in size. Sensitivity of the procedure is of the order of 1 fCi/m 3 for air and of 10 pCi/m 2 per month for precipitation samples at a counting time of 1500 min. (author)

  20. Pershore made CR-39(DOP) as a 1.015 GeV/n 197Au-ion detector

    International Nuclear Information System (INIS)

    Bhattacharyya, D.P.; Chakrabarty, S.; Rakshit, R.; Basu, B.; Pal, P.; Biswas, S.

    1993-01-01

    Pershore made CR-39(DOP) stack was exposed at a zenith angle of 30deg by 197 Au-ions of energy 1.015 GeV/n using LBL BEVALAC beam. The top of the irradiated plate of the stack has been etched in 6.25N NaOH solution at 70degC for one hour. About 1202 cone lengths were optically measured. The estimated etch rate ratio of the incident 197 Au projectile beam in CR-39 has been found to be 27±2. The result has been compared with earlier observation. The charge resolution of the detector has been estimated from the average of double cone lengths and has been found to have a value of (0.58±0.03)e for 197 Au-ions. (orig.)

  1. High-z semiconductor nuclear radiation detectors for room-temperature gamma-ray spectrometry

    International Nuclear Information System (INIS)

    Bornand, Bernard; Friant, Alain.

    1978-09-01

    A bibliographical review (182 articles of periodicals, conferences, reports, thesis and french patents) is presented, as addendum of the report CEA-BIB-210 (1974) on high-Z semiconductor compounds used as materials for the gamma and X-ray detection and spectrometry. This publication reviews issues from 1974 to 1977. References and summaries (in french) are incorporated into 182 bibliograhical notices. Index for authors, corporate authors, documents and periodicals, and subjects is included [fr

  2. New SRDN-3 probes with a semi-conductor detector for measuring radon activity concentration in underground spaces

    International Nuclear Information System (INIS)

    Przylibski, T.A.; Lidia Fijalkowska-Lichwa; Elzbieta Kochowska; Krzysztof Kozak; Jadwiga Mazur

    2010-01-01

    The article presents new Polish probes SRDN-3, developed at the Institute of Nuclear Chemistry and Technology in Warsaw, equipped with a semi-conductor detector used for continuous measurements of 222 Rn activity concentration. Due to a relatively high lower detection limit, the device is dedicated for use in underground spaces-caves, adits, mines, tourist routes in strongholds, pyramids, etc. Its structure allows for difficult conditions in which the device is transported to the measurement site, as well as hard operating conditions caused chiefly by large ambient relative humidity, reaching up to 100%. The authors present calibration results of these appliances, as well as the results of their work in a cave and an adit in the Sudetes (SW Poland). After almost 2 years of working in difficult conditions, the probes displayed high reliability. No defects of the semi-conductor detectors or the electronics were observed, which ensured problem-free communication of the probe-programmer-PC set. Thanks to this, the authors have a 2 year stock of data, recorded hourly by five probes, at their disposal. The only element that did not withstand the test of extreme operating conditions was one of the combined relative humidity and temperature sensors. No powering problems were observed either, and the batteries were replaced once a year, before the winter season. Also the programmer functioned faultlessly, enabling data transmission to a PC, which, being much more sensitive to operating conditions, had been placed away from the site of probe exposure. After using more sensitive temperature, relative humidity and pressure sensors, SRDN-3 probes will certainly prove an excellent tool for microclimate measurements (including measurement of air-atmosphere exchange) in caves and other underground sites. Even nowadays they are already a satisfactory tool for monitoring 222 Rn concentration in underground spaces. (author)

  3. Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

    Science.gov (United States)

    Pham, Thach; Du, Wei; Tran, Huong; Margetis, Joe; Tolle, John; Sun, Greg; Soref, Richard A; Naseem, Hameed A; Li, Baohua; Yu, Shui-Qing

    2016-03-07

    Normal-incidence Ge 1-x Sn x photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge 1-x Sn x /Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 10 9 cmHz 1/2 W -1 at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.

  4. A tracking detector to study O (1 GeV) νμ CC interactions

    International Nuclear Information System (INIS)

    Bernardini, P.; Marsella, G.; Cecchini, S.; Cindolo, F.; D'Antone, I.; Esposti, L. Degli; Lax, I.; Mandrioli, G.; Mauri, N.; Pasqualini, L.; Patrizii, L.; Pozzato, M.; Sirri, G.; Surdo, A.; Tenti, M.

    2017-01-01

    A tracking system composed of planes of triangular shape scintillator bars coupled to Silicon PhotoMultipliers in analog mode read-out has been developed for applications in neutrino experiments. A spatial resolution of O (1 mm) is required for the determination of momentum and charge of muons produced in ν μ CC interactions at few GeV energy scale. The performance of the system has been studied by exposing it to charged particle beams at the CERN-PS. Preliminary results are discussed.

  5. Electrical switching phenomenon and memory effect in the semiconductor chalcogenide glass Ge0.10 As0.20 Te0.70

    International Nuclear Information System (INIS)

    Haro, M.; Marquez, E.; Villares, P.; Jimenez-Garay, R.

    1987-01-01

    Electrical switching phenomenon, as well as the memory effect in the semiconductor chalcogenide glass Ge 0.10 As 0.20 Te 0.70 has been studied. A device with a plano-punctual interelectrode configuration has been designed and built, so that the electrical stimuli may be applied correctly. This device permits adequate positioning of the upper electrode, as well as contact pressure regulation. The I-V characteristics in the OFF-state have been obtained, showing a marked non-linear character. Equally, a relation has been found between the threshold voltage and electrical resistance parameters, indicating that the electrical power giving rise to the phenomenon is constant. Finally, memory effects showing a sudden reduction in electrical resistance, as well as interelectrode filaments, have been observed. (author)

  6. A proposal for both plasma ion- and electron-temperature diagnostics under simultaneous incidence of particles and x-rays into a semiconductor on the basis of a proposed model for a semiconductor detector response

    International Nuclear Information System (INIS)

    Numakura, T; Cho, T; Kohagura, J; Hirata, M; Minami, R; Yoshida, M; Nakashima, Y; Tamano, T; Yatsu, K; Miyoshi, S

    2003-01-01

    A method is proposed for obtaining radial profiles of plasma temperatures of both plasma ion (T i ) and electron (T e ) simultaneously by the use of a semiconductor detector array. The method is based on our developed particle-response model for a semiconductor detector; in particular, the response theory is constructed for giving the applicability in particle energies ranging down to a kiloelectronvolt. Calculated results from our model are in fairly good agreement with experimental data on the detector response of incident particle beams with energies in the range 100 eV to a few kiloelectronvolts. On the basis of the verification of the proposed model, an idea of the use of a developed semiconductor detector array covered with 'reliably unbreakable' ultrathin SiO 2 'dead-layer filters' having various nanometre-order thicknesses is applied for simultaneous T i and T e analyses by using charge-exchange neutral particles and x-rays from plasmas. Radial profiles of T i and T e are obtained in a single plasma discharge alone, and the data reliability is independently cross-checked by a radial scan of a conventional charge-exchange neutral-particle analyser system as well as a 50-channel microchannel plate x-ray diagnostics system in the GAMMA 10 tandem mirror

  7. Neutron-activation determination of the rare earths in natural calcites using a semiconductor detector

    International Nuclear Information System (INIS)

    Vaganov, N.A.; Bulnaev, A.I.; Mejer, V.A.; Ponomarev, V.S.

    1976-01-01

    The application of germanium semiconducting detector is described. The detector has an energy resolution about 1 KeV and makes it possible to determine the content of Ce, Nd, Eu, Gd, Tb, and Yb in natural calcites with high sensitivity. The region of soft γ-radiation of activated calcites is more favourable for measurements to be performed than the region of hard γ-rays. Semiconducting detectors of radiation type are relatively cheap; they can be stored at room temperature. The limit of determining rare earth elements in calcites is (g): Eu-1.5.10 -9 ; Tb-4.0.10 -9 ; Yb-7.0.10 -9 ; Ce-1.0.10 -7 ; Nd-5.0.10 -7 ; Gd-1.0.10 -6 . A relative error of concentration determination is 10-20%

  8. Ionizing Radiation Detectors Based on Ge-Doped Optical Fibers Inserted in Resonant Cavities

    Directory of Open Access Journals (Sweden)

    Saverio Avino

    2015-02-01

    Full Text Available The measurement of ionizing radiation (IR is a crucial issue in different areas of interest, from environmental safety and industrial monitoring to aerospace and medicine. Optical fiber sensors have recently proven good candidates as radiation dosimeters. Here we investigate the effect of IR on germanosilicate optical fibers. A piece of Ge-doped fiber enclosed between two fiber Bragg gratings (FBGs is irradiated with gamma radiation generated by a 6 MV medical linear accelerator. With respect to other FBG-based IR dosimeters, here the sensor is only the bare fiber without any special internal structure. A near infrared laser is frequency locked to the cavity modes for high resolution measurement of radiation induced effects on the fiber optical parameters. In particular, we observe a variation of the fiber thermo-optic response with the radiation dose delivered, as expected from the interaction with Ge defect centers, and demonstrate a detection limit of 360 mGy. This method can have an impact in those contexts where low radiation doses have to be measured both in small volumes or over large areas, such as radiation therapy and radiation protection, while bare optical fibers are cheap and disposable.

  9. Micro and nanophotonics for semiconductor infrared detectors towards an ultimate uncooled device

    CERN Document Server

    Jakšic, Zoran

    2014-01-01

    The advent of microelectromechanic system (MEMS) technologies and nanotechnologies has resulted in a multitude of structures and devices with ultra compact dimensions and with vastly enhanced or even completely novel properties. In the field of photonics it resulted in the appearance of new paradigms, including photonic crystals that exhibit photonic bandgap and represent an optical analog of semiconductors and metamaterials that have subwavelength features and may have almost arbitrary values of effective refractive index, including those below zero. In addition to that, a whole new field of

  10. Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

    International Nuclear Information System (INIS)

    Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

    2014-01-01

    Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

  11. Properties and growth peculiarities of Si{sub 0.30}Ge{sub 0.70} stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Hikavyy, A., E-mail: Andriy.Hikavyy@imec.be; Rosseel, E.; Kubicek, S.; Mannaert, G.; Favia, P.; Bender, H.; Loo, R.; Horiguchi, N.

    2016-03-01

    Integration of Si{sub 0.30}Ge{sub 0.70} in the Source/Drain (S/D) areas of metal oxide semiconductor transistors built according to 14 nm technological node rules has been shown. SiGe properties and growth peculiarities are presented and elaborated. In order to preserve the fin structures during a pre-epitaxy surface preparation, the H{sub 2} bake pressure had to be increased to 19,998 Pa at 800 °C. Influence of this bake on the Si recess in the S/D areas is presented. Excellent quality of both the raised and the embedded Si{sub 0.30}Ge{sub 0.70} was demonstrated by transmission electron microscopy inspections. Energy-dispersive X-ray spectroscopy measurement showed two stages of SiGe growth for the embedded case: first with a lower Ge content at the beginning of the deposition until the (111) facets are formed, and second with a higher Ge content which is governed by the growth on (111) planes. Nano-beam diffraction analysis showed that SiGe grown in the S/D areas of p-type metal-oxide-semiconductor field-effect transistor is fully elastically relaxed in the direction across the fin and partially strained along the fin. Finally, a strain accumulation effect in the chain of transistors has been observed. - Highlights: • Si{sub 0.30}Ge{sub 0.70} stressor has been implemented in the 14 nm technology node CMOS flow. • Embedded and raised variants have been investigated. • High Si{sub 0.30}Ge{sub 0.70} quality was confirmed. • Si{sub 0.30}Ge{sub 0.70} layer is elastically relaxed across the fin direction. • Partial stress presence and stress accumulation effect were observed.

  12. Monte Carlo simulation of semiconductor detector response to "2"2"2Rn and "2"2"0Rn environments

    International Nuclear Information System (INIS)

    Irlinger, J.; Trinkl, S.; Wielunksi, M.; Tschiersch, J.; Rühm, W.

    2016-01-01

    A new electronic radon/thoron monitor employing semiconductor detectors based on a passive diffusion chamber design has been recently developed at the Helmholtz Zentrum München (HMGU). This device allows for acquisition of alpha particle energy spectra, in order to distinguish alpha particles originating from radon and radon progeny decays, as well as those originating from thoron and its progeny decays. A Monte-Carlo application is described which uses the Geant4 toolkit to simulate these alpha particle spectra. Reasonable agreement between measured and simulated spectra were obtained for both "2"2"0Rn and "2"2"2Rn, in the energy range between 1 and 10 MeV. Measured calibration factors could be reproduced by the simulation, given the uncertainties involved in the measurement and simulation. The simulated alpha particle spectra can now be used to interpret spectra measured in mixed radon/thoron atmospheres. The results agreed well with measurements performed in both radon and thoron gas environments. It is concluded that the developed simulation allows for an accurate prediction of calibration factors and alpha particle energy spectra. - Highlights: • A method was developed to simulate alpha particle spectra from radon/thoron decay. • New monitor features alpha-particle-spectroscopy based on silicon detectors. • A method is presented to quantify radon/thoron concentrations in mixed atmospheres. • The calibration factor can be simulated for various environmental parameters.

  13. Radon concentration and exhalation measurements with semiconductor detector and electrostatic precipitator working in a closed circulation system

    International Nuclear Information System (INIS)

    Wojcik, M.; Morawska, L.

    1982-01-01

    An apparatus is described and a method presented for the determination of concentration of radon emanated from solid and liquid samples. In this method an object or a sample of air is closed in an hermetically sealed chamber. The air contaminated by radon and its daughters is circulated in a closed system a few times through an electrostatic precipitator mounted in one housing with a semiconductor Si Li detector. The concentration of radon is determined by the alpha activity measurement of its daughters. The sensitivity of the apparatus is very high. While calculating a radon concentration from an activity measurement of RaA (fast method) the sensitivity is about 0.07 pCi/l and when measuring the activity of RaC' (slow method) it is 0.008 pCi/l. Due to the application of an electrostatic precipitator and a silicon detector it is possible to perform alpha spectrometric measurements and thus separate activities of RaA, RaC', and ThC and to calculate 222 Rn or 220 Rn concentrations. The efficiency of RaA, RaB, RaC, ThB and ThC collection is constant, due to the method involving the circulation of the air through the electrostatic precipitator several times. (author)

  14. Remote impact of rotating objects on semiconductor detector of gamma radiation

    International Nuclear Information System (INIS)

    Mel'nik, I.A.

    2005-01-01

    Remote impact of rotating objects (such as electric motors, flywheels) on meter and ionizing radiation detector readings were studied. A model, explaining diminution of readings of scintillation and gas-discharge intensimeters at switched on hygroscopic electric motor and at mechanically rotating flywheel, is proposed

  15. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Kutcher, Susan W [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Palsoz, Witold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Berding, Martha [SRI International, Menlo Park, CA (United States); Burger, Arnold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States)

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  16. Determination of radon concentration in spring gases with a portable semiconductor detector

    International Nuclear Information System (INIS)

    Endo, K.; Yanaga, M.; Yoshikawa, H.; Horiuchi, K.; Nakahara, H.; Murakami, Y.

    1985-01-01

    A portable integrating radon meter, alpha METER-400, was tested. The instrument detects α-rays of energy greater than 2.59 MeV. With this detector, the concentration of 222 Rn in spring gases at volcanic regions was determined. The results were compared with those observed by the liquid scintillation counting method. (author)

  17. Application of epithermal neutron activation in multielement analysis of silicate rocks employing both coaxial Ge(Li) and low energy photon detector systems

    Science.gov (United States)

    Baedecker, P.A.; Rowe, J.J.; Steinnes, E.

    1977-01-01

    The instrumental activation analysis of silicate rocks using epithermal neutrons has been studied using both high resolution coaxial Ge(Li) detectors and low energy photon detectors, and applied to the determination of 23 elements in eight new U.S.G.S. standard rocks. The analytical use X-ray peaks associated with electron capture or internal conversion processes has been evaluated. Of 28 elements which can be considered to be determinable by instrumental means, the epithermal activation approach is capable of giving improved sensitivity and precision in 16 cases, over the normal INAA procedure. In eleven cases the use of the low energy photon detector is thought to show advantages over convertional coaxial Ge(Li) spectroscopy. ?? 1977 Akade??miai Kiado??.

  18. Structural characterization of the high-temperature modification of the Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor compound

    Energy Technology Data Exchange (ETDEWEB)

    Nieves, L.; Marcano, G.; Power, C.; Rincon, C. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Lopez-Rivera, S.A. [Grupo de Fisica Aplicada, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of)

    2016-06-15

    A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm{sup -1} have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm{sup -1} tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this high-temperature modification of ZnTe and Cu{sub 2}GeTe{sub 3} secondary phases has been detected by both XRD and Raman spectroscopy. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. The structural, elastic, electronic and dynamical properties of chalcopyrite semiconductor BeGeAs{sub 2} from first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Ciftci, Yasemin Oe. [Gazi University Teknikokullar, Department of Physics, Faculty of Sciences, Ankara (Turkey); Evecen, Meryem; Aldirmaz, Emine [Amasya University, Department of Physics, Faculty of Arts and Sciences, Amasya (Turkey)

    2017-01-15

    First-principles calculations for the structural, elastic, electronic and vibrational properties of BeGeAs{sub 2} with chalcopyrite structure have been reported in the frame work of the density functional theory. The calculated ground state properties are in good agreement with the available data. By considering the electronic band structure and electronic density of states calculation, it is found that this compound is a semiconductor which confirmed the previous work. Single-crystal elastic constants and related properties such as Young's modulus, Poisson ratio, shear modulus and bulk modulus have been predicted using the stress-finite strain technique. It can be seen from the calculated elastic constants that this compound is mechanically stable in the chalcopyrite structure. Pressure dependences of elastic constants and band gap are also reported. Finally, the phonon dispersion curves and total and partial density of states were calculated and discussed. The calculated phonon frequencies BeGeAs{sub 2} are positive, indicating the dynamical stability of the studied compound. (orig.)

  20. A method to reproduce alpha-particle spectra measured with semiconductor detectors.

    Science.gov (United States)

    Timón, A Fernández; Vargas, M Jurado; Sánchez, A Martín

    2010-01-01

    A method is proposed to reproduce alpha-particle spectra measured with silicon detectors, combining analytical and computer simulation techniques. The procedure includes the use of the Monte Carlo method to simulate the tracks of alpha-particles within the source and in the detector entrance window. The alpha-particle spectrum is finally obtained by the convolution of this simulated distribution and the theoretical distributions representing the contributions of the alpha-particle spectrometer to the spectrum. Experimental spectra from (233)U and (241)Am sources were compared with the predictions given by the proposed procedure, showing good agreement. The proposed method can be an important aid for the analysis and deconvolution of complex alpha-particle spectra. Copyright 2009 Elsevier Ltd. All rights reserved.

  1. Performance of semiconductor radiation sensors for simple and low-cost radiation detector

    International Nuclear Information System (INIS)

    Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

    2008-01-01

    In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

  2. Fluorocarbon evaporative cooling developments for the ATLAS pixel and semiconductor tracking detectors

    CERN Document Server

    Anderssen, E; Berry, S; Bonneau, P; Bosteels, Michel; Bouvier, P; Cragg, D; English, R; Godlewski, J; Górski, B; Grohmann, S; Hallewell, G D; Hayler, T; Ilie, S; Jones, T; Kadlec, J; Lindsay, S; Miller, W; Niinikoski, T O; Olcese, M; Olszowska, J; Payne, B; Pilling, A; Perrin, E; Sandaker, H; Seytre, J F; Thadome, J; Vacek, V

    1999-01-01

    Heat transfer coefficients 2-5.103 Wm-2K-1 have been measured in a 3.6 mm I.D. heated tube dissipating 100 Watts - close to the full equivalent power (~110 W) of a barrel SCT detector "stave" - over a range of power dissipations and mass flows in the above fluids. Aspects of full-scale evaporative cooling circulator design for the ATLAS experiment are discussed, together with plans for future development.

  3. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    International Nuclear Information System (INIS)

    Beeman, J.W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

    2013-01-01

    In germanium-based light detectors for scintillating bolometers, a SiO 2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82 Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO 2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials

  4. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    Science.gov (United States)

    Beeman, J. W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

    2013-05-01

    In germanium-based light detectors for scintillating bolometers, a SiO2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ˜630 nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

  5. International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016)

    CERN Document Server

    Rossi, Leonardo; PIXEL2016

    2016-01-01

    The workshop will cover various topics related to pixel detector technology. Development and applications will be discussed for charged particle tracking in High Energy Physics, Nuclear Physics and Astrophysics, and for X-ray imaging in Astronomy, Biology, Medicine and Material Science. The conference program will also include reports on front and back end electronics, radiation effects, low mass mechanics, environmental control and construction techniques. Emerging technologies, such as monolithic and HV&HR CMOS, will also be treated. Will be published in: http://pos.sissa.it/

  6. Semiconductor detectors for observation of multi-MeV protons and ions produced by lasers

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; Klir, D.; De Marco, Massimo; Cikhardt, J.; Velyhan, Andriy; Řezáč, Karel; Pfeifer, Miroslav; Krouský, Eduard; Ryć, L.; Dostál, Jan; Kaufman, Jan; Ullschmied, Jiří; Limpouch, J.

    2016-01-01

    Roč. 3, č. 1 (2016), 9-11 ISSN 2336-2626 R&D Projects: GA ČR GA16-07036S; GA MŠk EF15_008/0000162; GA MŠk(CZ) LD14089 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : laser-accelerated ions * ion collectors * SiC detectors * similarity relations * electromagnetic pulse Subject RIV: BL - Plasma and Gas Discharge Physics

  7. Holmium-166m: multi-gamma standard to determine the activity of radionuclides in semiconductor detectors

    International Nuclear Information System (INIS)

    Bernardes, Estela Maria de Oliveira

    2001-01-01

    The efficiency and calibration curves as function of gamma-ray energy for a germanium detector are usually established by using many standard gamma ray sources of radionuclides decaying with few gamma rays or radionuclides having complex decay scheme, as 152 Eu or 133 Ba. But these radionuclides cannot be used alone, because they have a few gamma lines with high intensity and these lines have a irregular distribution in the energy spectrum. 166m Ho is found to be a convenient single source for such calibration, because it decays by β - with subsequent emission of about 40 strong and well distributed gamma lines between 80 and 1500 keV. Moreover, its long half - life (1200 years) and X-rays characteristics between 40 and 50 keV makes it a good standard for calibration of germanium detectors. However, it is necessary to know with accuracy and precision the gamma ray intensities of their main lines, due to the fact that literature has showed discrepant values. Then, a methodology to determine the emission probability of its main lines is proposed by means of combined use of gamma spectrometry and coincidence 4πβ -γ techniques. The experimental results show consistence to the others authors, with lower or compatible uncertainties. (author)

  8. Mounting and testing of a 'sandwich' type neutron spectrometer with semiconductor detectors and 6Li

    International Nuclear Information System (INIS)

    Fabro, M.A.

    1973-01-01

    Commercial surface barrier detectors (Si(Au)) were used to construct the spectrometer; the 6 LiF was evaporated by vacuum onto a film of Formvar and afterwards over the surface of one of the detectors, with a 6 LiF thickness of 0,2 μm (50 μg/cm 2 ) and 1,5 μm(400 μg/cm 2 ) respectively. Tests were made with slow neutrons and with neutrons from the reactions D(d,n) 3 He (2,65 MeV) and T(d,n) 4 He (14 MeV). The energy resolution for thermal neutrons was about 200 keV (FWHM) for the sum (E sub(t) + E sub(α)) and about 7 keV (FWHM) for the difference (E sub(t) - E sub(α)) with an evaluated efficiency of 5,5x10 -4 , for the sum. For the 2,65 MeV neutrons, the energy resolution was about 240 keV (FWHM) and an evaluated efficiency of 2,1 x 10 -7 . It was not possible to detect 14 MeV neutrons [pt

  9. Evidence of formation of trans-Fe nuclei in Fe+Al interactions at 1.88 GeV using Cr-39 (DOP) detector

    International Nuclear Information System (INIS)

    Ganguly, A.K.; Chaudhuri, Biva

    1991-01-01

    A wedge-shaped aluminium target was irradiated with 1.88 A GeV Fe beam to study various features of Fe+Al nucleus-nucleus interaction and their dependence on target thickness. The detector employed was a stack of CR-39 (DOP) and Lexan plastic nuclear track detectors which have a characteristically high charge resolution property. To distinguish the actual events from background and buildup a selection criteria for easy and unambiguous rejection of unwanted interfering events the stack of detectors was placed at an angle of 60deg with respect to the beam. After irradiation the CR-39 (DOP) detectors were etched and the elliptic etch-pit diameters were scanned. The diameter distribution of the elliptic etch-pits exhibits the existence of trans Fe nuclei. The production of trans Fe fraction is seen to increase with the thickness of the aluminium target. The possible causes of this increase are being investigated. (author). 12 refs., 4 figs

  10. Measurement of the running of the fine structure constant below 1 GeV with the KLOE detector

    Directory of Open Access Journals (Sweden)

    A. Anastasi

    2017-04-01

    Full Text Available We have measured the running of the effective QED coupling constant α(s in the time-like region 0.6GeV with the KLOE detector at DAΦNE using the Initial-State Radiation process e+e−→μ+μ−γ. It represents the first measurement of the running of α(s in this energy region. Our results show a more than 5σ significance of the hadronic contribution to the running of α(s, which is the strongest direct evidence both in time- and space-like regions achieved in a single measurement. By using the e+e−→π+π− cross section measured by KLOE, the real and imaginary parts of the shift Δα(s have been extracted. From a fit of the real part of Δα(s and assuming the lepton universality the branching ratio BR(ω→μ+μ−=(6.6±1.4stat±1.7syst⋅10−5 has been determined.

  11. Measurement of the running of the fine structure constant below 1 GeV with the KLOE detector

    CERN Multimedia

    CERN. Geneva

    2017-01-01

    Precision physics requires appropriate inclusion of higher order effects and the knowledge of very precise input parameters of the electroweak Standard Model. One of the basic input parameters is the effective QED coupling constant α(s) which depends on the energy scale because of charge screening by vacuum polarization. Hadronic non-perturbative effects limits the accuracy of α(s) from low energy to the Z mass scale. We present the measurement of the running of the QED coupling constant in the time-like region 0.6 < √s < 0.975 GeV with the KLOE detector at DAΦNE , using the ISR differential cross section dσ(e+e− → μ+μ− γ)/d√s. The result shows a clear contribution of the ρ−ω resonances to the photon propagator with a significance of the hadronic contribution to the running of α(s) of more than 5σ. It represents the first measurement of th...

  12. First Investigation on a novel 2D position sensitive semiconductor detector concept

    CERN Document Server

    Bassignana, D; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I

    2012-01-01

    This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.

  13. Detector trends

    International Nuclear Information System (INIS)

    Charpak, G.

    1986-01-01

    The author describes briefly the development of detectors for high energy physics experiments. Especially considered are semiconductor microstrip detectors, drift tubes, holographic bubble chambers, scintillating fiber optics, and calorimeters. (HSI).

  14. Bibliographical study on the high-purity germanium radiation detectors used in gamma and X spectrometry

    International Nuclear Information System (INIS)

    Bornand, Bernard; Friant, Alain

    1979-03-01

    The germanium or silicon lithium-drifted detectors, Ge(Li) or Si(Li), and high-purity germanium detectors, HP Ge (impurity concentration approximately 10 10 cm -3 ), are the most commonly used at the present time as gamma and X-ray spectrometers. The HP Ge detectors for which room temperature storage is the main characteristic can be obtained with a large volume and a thin window, and are used as the Ge(Li) in γ ray spectrometry or the Si(Li) in X-ray spectrometry. This publication reviews issues from 1974 to 1978 on the state of the art and applications of the HP Ge semiconductor detectors. 101 bibliographical notices with French summaries are presented. An index for authors, documents and periodicals, and subjects is included [fr

  15. Calculation of critical level value for radioactivity detection in gamma spectrometric analysis on the base of semiconductor detectors under the Chernobyl' conditions in 1986-1987

    International Nuclear Information System (INIS)

    Glazunov, V.O.; Rusyaev, R.V.

    1989-01-01

    The problem of determination of radioactivity critical level in a sample by means of gamma spectrometer with semiconductor detector is studied theoretically. The formula for critical level, which shows that it is necessary to know the background pulse counting rate in order to determine the minimum gamma photon pulse counting rates, is derived. Calculations of critical level for the Chernobyl' conditions in time period from October 1986 till July 1987 are made. 8 refs.; 7 figs.; 17 tabs

  16. Study of the Solar Anisotropy for Cosmic Ray Primaries of about 200 GeV Energy with the L3+C Muon Detector

    CERN Document Server

    Achard, P; Aguilar-Benitez, M; van den Akker, M; Alcaraz, J; Alemanni, G; Allaby, J; Aloisio, A; Alviggi, M G; Anderhub, H; Andreev, Valery P; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Bajo, A; Baksay, G; Baksay, L; Bahr, J; Baldew, S V; Banerjee, S; Banerjee, Sw; Barczyk, A; Barillere, R; Bartalini, P; Basile, M; Batalova, N; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bellucci, L; Berbeco, R; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biglietti, M; Biland, A; Blaising, J J; Blyth, S C; Bobbink, G J; Bohm, A; Boldizsar, L; Borgia, B; Bottai, S; Bourilkov, D; Bourquin, M; Braccini, S; Branson, J G; Brochu, F; Burger, J D; Burger, W J; Cai, X D; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A; Casaus, J; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada, M; Chamizo, M; Chiarusi, T; Chang, Y H; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chiefari, G; Cifarelli, L; Cindolo, F; Clare, I; Clare, R; Coignet, G; Colino, N; Costantini, S; de la Cruz, B; Cucciarelli, S; van Dalen, J; de Asmundis, R; Deglon, P; Debreczeni, J; Degre, A; Dehmelt, K; Deiters, K; della Volpe, D; Delmeire, E; Denes, P; DeNotaristefani, F; De Salvo, A; Diemoz, M; Dierckxsens, M; Ding, L K; Dionisi, C; Dittmar, M; Doria, A; Dova, M T; Duchesneau, D; Duda, M; Duran, I; Echenard, B; Eline, A; El Hage, A; El Mamouni, H; Engler, A; Eppling, F J; Extermann, P; Faber, G; Falagan, M A; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, M; Ferguson, T; Fesefeldt, H; Fiandrini, E; Field, J H; Filthaut, F; Fisher, W; Fisk, I; Forconi, G; Freudenreich, K; Furetta, C; Galaktionov, Iouri; Ganguli, S N; Garcia-Abia, Pablo; Gataullin, M; Gentile, S; Giagu, S; Gong, Z F; Grabosch, H J; Grenier, G; Grimm, O; Groenstege, H; Gruenewald, M W; Guida, M; Guo, Y N; Gupta, S; Gupta, V K; Gurtu, A; Gutay, L J; Haas, D; Haller, Ch; Hatzifotiadou, D; Hayashi, Y; He, Z X; Hebbeker, T; Herve, Alain; Hirschfelder, J; Hofer, H; Hohlmann, M; Holzner, G; Hou, S R; Huo, A X; Hu, Y; Ito, N; Jin, B N; Jing, C L; Jones, Lawrence W; de Jong, P; Josa-Mutuberria, I; Kantserov, V; Kaur, M; Kawakami, S; Kienzle-Focacci, M N; Kim, J K; Kirkby, Jasper; Kittel, W; Klimentov, A; Konig, A C; Kok, E; Korn, A; Kopal, M; Koutsenko, V; Kraber, M; Kuang, H H; Kraemer, R W; Kruger, A; Kuijpers, J; Kunin, A; Ladron de Guevara, P; Laktineh, I; Landi, G; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Lei, Y; Leich, H; Leiste, R; Levtchenko, M; Levtchenko, P; Li, C; Li, L; Li, Z C; Likhoded, S; Lin, C H; Lin, W T; Linde, F L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, Y S; Luci, C; Luminari, L; Lustermann, W; Ma, W G; Ma, X H; Ma, Y Q; Malgeri, L; Malinin, A; Mana, C; Mans, J; Martin, J P; Marzano, F; Mazumdar, K; McNeil, R R; Mele, S; Meng, X W; Merola, L; Meschini, M; Metzger, W J; Mihul, A; van Mil, A; Milcent, H; Mirabelli, G; Mnich, J; Mohanty, G B; Monteleoni, B; Muanza, y G S; Muijs, A J M; Musicar, B; Musy, M; Nagy, S; Nahnhauer, R; Naumov, V A; Natale, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nisati, A; Novak, T; Kluge, Hannelies; Ofierzynski, R; Organtini, G; Pal, I; Palomares, C; Paolucci, P; Paramatti, R; Parriaud, J -F; Passaleva, G; Patricelli, S; Paul, Thomas Cantzon; Pauluzzi, M; Paus, C; Pauss, F; Pedace, M; Pensotti, S; Perret-Gallix, D; Petersen, B; Piccolo, D; Pierella, F; Pieri, M; Pioppi, M; Piroue, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pojidaev, V; Pothier, J; Prokofev, D; Quartieri, J; Qing, C R; Rahal-Callot, G; Rahaman, Mohammad Azizur; Raics, P; Raja, N; Ramelli, R; Rancoita, P G; Ranieri, R; Raspereza, A; Ravindran, K C; Razis, P; Ren, D; Rescigno, M; Reucroft, S; Rewiersma, P; Riemann, y S; Riles, Keith; Roe, B P; Rojkov, A; Romero, L; Rosca, A; Rosemann, C; Rosenbleck, C; Rosier-Lees, S; Roth, Stefan; Rubio, J A; Ruggiero, G; Rykaczewski, H; Saidi, R; Sakharov, A; Saremi, S; Sarkar, S; Salicio, J; Sanchez, E; Schafer, C; Schegelsky, V; Schmitt, V; Schoeneich, B; Schopper, H; Schotanus, D J; Sciacca, C; Servoli, L; Shen, C Q; Shevchenko, S; Shivarov, N; Shoutko, V; Shumilov, E; Shvorob, A; Son, D; Souga, C; Spillantini, P; Steuer, M; Stickland, D P; Stoyanov, B; Straessner, A; Sudhakar, K; Sulanke, H; Sultanov, G; Sun, L Z; Sushkov, S; Suter, H; Swain, J D; Szillasi, Z; Tang, X W; Tarjan, P; Tauscher, L; Taylor, L; Tellili, B; Teyssier, D; Timmermans, Charles; Ting, Samuel C C; Ting, S M; Tonwar, S C; Toth, J; Trowitzsch, G; Tully, C; Tung, K L; Ulbricht, J; Unger, M; Valente, E; Verkooijen, H; Van de Walle, R T; Vasquez, R; Veszpremi, V; Vesztergombi, G; Vetlitsky, I; Vicinanza, D; Viertel, G; Villa, S; Vivargent, M; Vlachos, S; Vodopianov, I; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Wadhwa, M; Wang, R G; Wang, Q; Wang, X L; Wang, X W; Wang, Z M; Weber, M; van Wijk, R; Wijnen, T A M; Wilkens, H; Wynhoff, S; Xia, L; Xu, Y P; Xu, J S; Xu, Z Z; Yamamoto, J; Yang, B Z; Yang, C G; Yang, H J; Yang, M; Yang, X F; Yao, Z G; Yeh, S C; Yu, Z Q; Zalite, An; Zalite, Yu; Zhang, C; Zhang, F; Zhang, J; Zhang, S; Zhang, Z P; Zhao, J; Zhou, S J; Zhu, G Y; Zhu, R Y; Zhuang, H L; Zhu, Q Q; Zichichi, A; Zimmermann, B; Zoller, M; Zwart, A N M

    2008-01-01

    Primary cosmic rays experience multiple deflections in the nonuniform galactic and heliospheric magnetic fields which may generate anisotropies. A study of anisotropies in the energy range between 100 and 500 GeV is performed. This energy range is not yet well explored. The L3 detector at the CERN electron-positron collider, LEP, is used for a study of the angular distribution of atmospheric muons with energies above 20 GeV. This distribution is used to investigate the isotropy of the time-dependent intensity of the primary cosmic-ray flux with a Fourier analysis. A small deviation from isotropy at energies around 200 GeV is observed for the second harmonics at the solar frequency. No sidereal anisotropy is found at a level above 10^-4. The measurements have been performed in the years 1999 and 2000.

  17. Search for narrow resonances in e+e- annihilation between 1.85 and 3.1 GeV with the KEDR detector

    International Nuclear Information System (INIS)

    Anashin, V.V.; Aulchenko, V.M.; Baldin, E.M.; Barladyan, A.K.; Barnyakov, A.Yu.; Barnyakov, M.Yu.; Baru, S.E.; Basok, I.Yu.; Beloborodova, O.L.; Blinov, A.E.; Blinov, V.E.; Bobrov, A.V.; Bobrovnikov, V.S.; Bogomyagkov, A.V.; Bondar, A.E.; Buzykaev, A.R.; Eidelman, S.I.; Grigoriev, D.N.; Glukhovchenko, Yu.M.; Gulevich, V.V.

    2011-01-01

    We report results of a search for narrow resonances in e + e - annihilation at center-of-mass energies between 1.85 and 3.1 GeV performed with the KEDR detector at the VEPP-4M e + e - collider. The upper limit on the leptonic width of a narrow resonance Γ ee R .Br(R→hadr)<120 eV has been obtained (at 90% C.L.).

  18. Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2016-01-14

    The effect of room temperature sulfur passivation of the surface of Ge{sub 0.83}Sn{sub 0.17} prior to high-k dielectric (HfO{sub 2}) deposition is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the chemical bonding at the interface of HfO{sub 2} and Ge{sub 0.83}Sn{sub 0.17}. Sulfur passivation is found to be effective in suppressing the formation of both Ge oxides and Sn oxides. A comparison of XPS results for sulfur-passivated and non-passivated Ge{sub 0.83}Sn{sub 0.17} samples shows that sulfur passivation of the GeSn surface could also suppress the surface segregation of Sn atoms. In addition, sulfur passivation reduces the interface trap density D{sub it} at the high-k dielectric/Ge{sub 0.83}Sn{sub 0.17} interface from the valence band edge to the midgap of Ge{sub 0.83}Sn{sub 0.17}, as compared with a non-passivated control. The impact of the improved D{sub it} is demonstrated in Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs). Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs with sulfur passivation show improved subthreshold swing S, intrinsic transconductance G{sub m,int}, and effective hole mobility μ{sub eff} as compared with the non-passivated control. At a high inversion carrier density N{sub inv} of 1 × 10{sup 13 }cm{sup −2}, sulfur passivation increases μ{sub eff} by 25% in Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs.

  19. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

    International Nuclear Information System (INIS)

    Knoll, G.F.

    1995-07-01

    Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach

  20. Characterisation of GERDA Phase-I detectors in liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Barnabe Heider, Marik; Schoenert, Stefan [Max-Planck-Institut fuer Kernphysik (Germany); Gusev, Konstantin [Russian Research Center, Kurchatov Institute (Russian Federation); Joint Institute for Nuclear Research (Russian Federation)

    2009-07-01

    GERDA will search for neutrinoless double beta decay in {sup 76}Ge by submerging bare enriched HPGe detectors in liquid argon. In GERDA Phase-I, reprocessed enriched-Ge detectors, which were previously operated by the Heidelberg-Moscow and IGEX collaborations, and reprocessed natural-Ge detectors from Genius-TF, will be redeployed. We have tested the operation and performance of bare HPGe detectors in liquid nitrogen and in liquid argon over more than three years with three non-enriched p-type prototype detectors. The detector handling and mounting procedures have been defined and the Phase-I detector technology, the low-mass assembly and the long-term stability in liquid argon have been tested successfully. The Phase-I detectors were reprocessed by Canberra Semiconductor NV, Olen, according to their standard technology but without the evaporation of a passivation layer. After their reprocessing, the detectors have been mounted in their low-mass holders and their characterisation in liquid argon performed. The leakage current, the counting characteristics and the efficiency of the detectors have been measured. The testing of the detectors was carried out in the liquid argon test stand of the GERDA underground Detector Laboratory (GDL) at LNGS. The detectors are now stored underground under vacuum until their operation in GERDA.

  1. Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal-oxide-semiconductor field effect transistor channels

    Science.gov (United States)

    Grasby, T. J.; Parry, C. P.; Phillips, P. J.; McGregor, B. M.; Morris, , R. J. H.; Braithwaite, G.; Whall, T. E.; Parker, E. H. C.; Hammond, R.; Knights, A. P.; Coleman, P. G.

    1999-03-01

    Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V-1 s-1 for a sheet density of 6.2×1011 cm-2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal-oxide-semiconductor device fabrication.

  2. Study of charged-current ep interactions at Q2 > 200 GeV2 with the ZEUS detector at HERA

    International Nuclear Information System (INIS)

    Derrick, M.; Krakauer, D.; Magill, S.

    1996-06-01

    Deep inelastic charged-current reactions have been studied in e + p and e - p collisions at a center of mass energy of about 300 GeV in the kinematic region Q 2 >200 GeV 2 and x>0.006 using the ZEUS detector at HERA. The integrated cross sections for Q 2 >200 GeV 2 are found to be σ e + p→ anti νX =30.3 -4.2-2.6 +5.5+1.6 pb and σ e - p→νX =54.7 -9.8-3.4 +15.9+2.8 pb. Differential cross sections have been measured as functions of the variables x, y and Q 2 . From the measured differential cross sections dσ/dQ 2 , the W boson mass is determined to be M W =79 -7-4 +8+4 GeV. Measured jet rates and transverse energy profiles agree with model predictions. A search for charged-current interactions with a large rapidity gap yielded one candidate event, corresponding to a cross section σ e + p→ anti νX (Q 2 >200 GeV 2 ; η max -0.7 +1.8 ±0.1 pb. (orig.)

  3. The ATLAS inner detector semiconductor tracker (Si and GaAs strips): review of the 1995 beam tests at the CERN SPS H8 beamline

    International Nuclear Information System (INIS)

    Moorhead, G.F.

    1995-01-01

    This talk will consist of a brief review of the ATLAS Inner Detector (ID) Semiconductor Tracker (SCT) strip detector (both silicon and gallium arsenide) beam tests conducted at the ATLAS test beam facility at the CERN SPS H8 beamline. It will include a brief overview of the H8 facilities, the experimental layout of the SCT/Strip apparatus, the data acquisition system, some of the online software tools and the high precision silicon hodoscope and timing modules used. A very brief indication of some of the main varieties of detector systems tested and the measurements performed will be given. Throughout some emphasis will be placed on the contributions and-interests of members of the Melbourne group. (author)

  4. A GEM Detector System for an Upgrade of the High-eta Muon Endcap Stations GE1/1 + ME1/1 in CMS

    CERN Document Server

    Abbaneo, D; Aspell, P.; Bianco, S.; Hoepfner, K.; Hohlmann, M.; Maggi, M.; De Lentdecker, G.; Safonov, A.; Sharma, A.; Tytgat, M.

    2012-01-01

    Based on the CMS Upgrade R&D Proposal RD10.02, we describe the motivation and main features of the CMS GEM Project for LS2 and propose the addition of a full GE1/12 detector station comprising Gas Electron Multiplier (GEM) chambers to the forward muon system of CMS. The limitations of the currently existing forward muon detector when operating at increasingly high luminosity expected after LS1 are laid out followed by a brief description of the anticipated performance improvements achievable with a GE1/1 station. The second part describes the detector system followed by an overview of electronics and associated services including a discussion of the schedule and cost of the project. Plans for a precursor demonstrator installation in LS1 are presented. This proposal is intended as a concise follow-up of the detailed document CMS-IN-2012-023. If approved, this is to be followed by a detailed Technical Design Report.

  5. Response of CR39 detector to 5 A GeV Si14+ ions and measurement of total charge changing cross-section

    International Nuclear Information System (INIS)

    Gupta, Renu; Kumar, Ashavani

    2013-01-01

    In the present work, response of CR39 track etch detector was obtained by cone-height measurement technique. CR39 track etch detector was used to identify the incident charged particles and their fragments by the measurements of cone-height of tracks using an optical microscope DM6000 M and automated image analyzer system installed with Leica QWin Plus software. The CR39 detector was calibrated and the response points were fitted with a linear relation and all the points are within the limits of the experimental errors. The charge resolution of the detector was calculated to be 0.2e. The response function is obtained and fitted with a linear relation which is good throughout Z/β=6.1–14.1. The experimental value of the total charge changing cross-section of 5 A GeV Si 14+ ion beam in polyethylene and CR39 combined target is σ tot =(734±128) mb. The total charge changing cross-section is compared with the experimental results of others based on cone base-area measurement technique and also fitted by the Bradt–Peters geometrical cross-section. - Highlights: • Charge resolution of 0.2e was obtained by cone-height measurement. • Consistency in manual measurements of cone-heights is presented. • Response of CR39 detector was obtained and fitted with first degree polynomial. • Total charge changing cross-section of 5 A GeV Si 14+ ions in CH 2 and CR39 as a combined target was calculated

  6. The search for Higgs boson production in the four-jet channel at 192 < √s < 202 GeV with the ALEPH detector at LEP

    International Nuclear Information System (INIS)

    Smith, D.H.

    2001-12-01

    A search for neutral Higgs boson production in e + e - collisions using data collected by the ALEPH detector at the LEP accelerator is presented. Approximately 413 pb -1 of data collected at centre of mass energies between 188.6 and 201.6 GeV during 1998 and 1999 is used. The selection of candidates is described and the results of the search are presented and interpreted. Particular attention is given to the selection of the final states with four hadronic jets. No evidence of Higgs boson production is found. In the context of the Standard Model the lower limit on the Higgs boson mass is set at 105.2 GeV/c 2 at the 95% confidence level. (author)

  7. Study of muon-pair production at centre-of-mass energies from 20 to 136 GeV with the ALEPH detector

    Science.gov (United States)

    Barate, R.; Buskulic, D.; Decamp, D.; Ghez, P.; Goy, C.; Lees, J.-P.; Lucotte, A.; Minard, M.-N.; Nief, J.-Y.; Odier, P.; Pietrzyk, B.; Casado, M. P.; Chmeissani, M.; Comas, P.; Crespo, J. M.; Delfino, M.; Fernandez, E.; Fernandez-Bosman, M.; Garrido, Ll.; Juste, A.; Martinez, M.; Orteu, S.; Padilla, C.; Park, I. C.; Pascual, A.; Perlas, J. A.; Riu, I.; Sanchez, F.; Teubert, F.; Colaleo, A.; Creanza, D.; de Palma, M.; Gelao, G.; Iaselli, G.; Maggi, G.; Maggi, M.; Marinelli, N.; Nuzzo, S.; Ranieri, A.; Raso, G.; Ruggieri, F.; Selvaggi, G.; Silvestris, L.; Tempesta, P.; Tricomi, A.; Zito, G.; Huang, X.; Lin, J.; Ouyang, Q.; Wang, T.; Xie, Y.; Xu, R.; Xue, S.; Zhang, J.; Zhang, L.; Zhao, W.; Abbaneo, D.; Alemany, R.; Bazarko, A. O.; Bright-Thomas, P.; Cattaneo, M.; Cerutti, F.; Drevermann, H.; Forty, R. W.; Frank, M.; Hagelberg, R.; Harvey, J.; Janot, P.; Jost, B.; Kneringer, E.; Knobloch, J.; Lehraus, I.; Lutters, G.; Mato, P.; Minten, A.; Miquel, R.; Mir, Ll. M.; Moneta, L.; Oest, T.; Pacheco, A.; Pusztaszeri, J.-F.; Ranjard, F.; Rensing, P.; Rizzo, G.; Rolandi, L.; Schlatter, D.; Schmelling, M.; Schmitt, M.; Schneider, O.; Tejessy, W.; Tomalin, I. R.; Venturi, A.; Wachsmuth, H.; Wagner, A.; Ajaltouni, Z.; Barrès, A.; Boyer, C.; Falvard, A.; Ferdi, C.; Gay, P.; Guicheney, C.; Henrard, P.; Jousset, J.; Michel, B.; Monteil, S.; Montret, J.-C.; Pallin, D.; Perret, P.; Podlyski, F.; Proriol, J.; Rosnet, P.; Rossignol, J.-M.; Fearnley, T.; Hansen, J. B.; Hansen, J. D.; Hansen, J. R.; Hansen, P. H.; Nilsson, B. S.; Rensch, B.; Wäänänen, A.; Daskalakis, G.; Kyriakis, A.; Markou, C.; Simopoulou, E.; Vayaki, A.; Zachariadou, K.; Blondel, A.; Brient, J. C.; Machefert, F.; Rougé, A.; Rumpf, M.; Valassi, A.; Videau, H.; Focardi, E.; Parrini, G.; Corden, M.; Georgiopoulos, C.; Jaffe, D. E.; Antonelli, A.; Bencivenni, G.; Bologna, G.; Bossi, F.; Campana, P.; Capon, G.; Casper, D.; Chiarella, V.; Felici, G.; Laurelli, P.; Mannocchi, G.; Murtas, F.; Murtas, G. P.; Passalacqua, L.; Pepe-Altarelli, M.; Curtis, L.; Dorris, S. J.; Halley, A. W.; Knowles, I. G.; Lynch, J. G.; O'Shea, V.; Raine, C.; Scarr, J. M.; Smith, K.; Teixeira-Dias, P.; Thompson, A. S.; Thomson, E.; Thomson, F.; Turnbull, R. M.; Becker, U.; Geweniger, C.; Graefe, G.; Hanke, P.; Hansper, G.; Hepp, V.; Kluge, E. E.; Putzer, A.; Schmidt, M.; Sommer, J.; Stenzel, H.; Tittel, K.; Werner, S.; Wunsch, M.; Beuselinck, R.; Binnie, D. M.; Cameron, W.; Dornan, P. J.; Girone, M.; Goodsir, S.; Martin, E. B.; Morawitz, P.; Moutoussi, A.; Nash, J.; Sedgbeer, J. K.; Stacey, A. M.; Williams, M. D.; Dissertori, G.; Girtler, P.; Kuhn, D.; Rudolph, G.; Betteridge, A. P.; Bowdery, C. K.; Colrain, P.; Crawford, G.; Finch, A. J.; Foster, F.; Hughes, G.; Jones, R. W.; Sloan, T.; Whelan, E. P.; Williams, M. I.; Hoffmann, C.; Jakobs, K.; Kleinknecht, K.; Quast, G.; Renk, B.; Rohne, E.; Sander, H.-G.; van Gemmeren, P.; Zeitnitz, C.; Aubert, J. J.; Benchouk, C.; Bonissent, A.; Buiosa, G.; Calvet, D.; Carr, J.; Coyle, P.; Diaconu, C.; Konstantinidis, N.; Leroy, O.; Payre, P.; Rousseau, D.; Talby, M.; Sadouki, A.; Thulasidas, M.; Tilquin, A.; Trabelsi, K.; Aleppo, M.; Ragusa, F.; Berlich, R.; Blum, W.; Büscher, V.; Dietl, H.; Dydak, F.; Ganis, G.; Gotzhein, C.; Kroha, H.; Lütjens, G.; Lutz, G.; Männer, W.; Moser, H.-G.; Richter, R.; Rosado-Schlosser, A.; Schael, S.; Settles, R.; Seywerd, H.; St. Denis, R.; Stenzel, H.; Wiedenmann, W.; Wolf, G.; Boucrot, J.; Callot, O.; Chen, S.; Cordier, A.; Davier, M.; Duflot, L.; Grivaz, J.-F.; Heusse, Ph.; Höcker, A.; Jacholkowska, A.; Jacquet, M.; Kim, D. W.; Le Diberder, F.; Lefrançois, J.; Lutz, A.-M.; Nikolic, I.; Park, H. J.; Schune, M.-H.; Simion, S.; Veillet, J.-J.; Videau, I.; Zerwas, D.; Azzurri, P.; Bagliesi, G.; Batignani, G.; Bettarini, S.; Bozzi, C.; Calderini, G.; Carpinelli, M.; Ciocci, M. A.; Ciulli, V.; dell'Orso, R.; Fantechi, R.; Ferrante, I.; Giassi, A.; Gregorio, A.; Ligabue, F.; Lusiani, A.; Marrocchesi, P. S.; Messineo, A.; Palla, F.; Sanguinetti, G.; Sciabà, A.; Spagnolo, P.; Steinberger, J.; Tenchini, R.; Tonelli, G.; Vannini, C.; Verdini, P. G.; Blair, G. A.; Bryant, L. M.; Chambers, J. T.; Gao, Y.; Green, M. G.; Medcalf, T.; Perrodo, P.; Strong, J. A.; von Wimmersperg-Toeller, J. H.; Botterill, D. R.; Clifft, R. W.; Edgecock, T. R.; Haywood, S.; Maley, P.; Norton, P. R.; Thompson, J. C.; Wright, A. E.; Bloch-Devaux, B.; Colas, P.; Kozanecki, W.; Lançon, E.; Lemaire, M. C.; Locci, E.; Perez, P.; Rander, J.; Renardy, J.-F.; Roussarie, A.; Schuller, J.-P.; Schwindling, J.; Trabelsi, A.; Vallage, B.; Black, S. N.; Dann, J. H.; Kim, H. Y.; Litke, A. M.; McNeil, M. A.; Taylor, G.; Booth, C. N.; Boswell, R.; Brew, C. A. J.; Cartwright, S.; Combley, F.; Kelly, M. S.; Letho, M.; Newton, W. M.; Reeve, J.; Thompson, L. F.; Affholderbach, K.; Böhrer, A.; Brandt, S.; Cowan, G.; Grupen, C.; Saraiva, P.; Smolik, L.; Stephan, F.; Apollonio, M.; Bosisio, L.; della Marina, R.; Giannini, G.; Gobbo, B.; Musolino, G.; Putz, J.; Rothberg, J.; Wasserbaech, S.; Williams, R. W.; Armstrong, S. R.; Elmer, P.; Feng, Z.; Ferguson, D. P. S.; Gao, Y. S.; González, S.; Grahl, J.; Greening, T. C.; Hayes, O. J.; Hu, H.; McNamara, P. A.; Nachtman, J. M.; Orejudos, W.; Pan, Y. B.; Saadi, Y.; Scott, I. J.; Walsh, J.; Sau, Lan Wu; Wu, X.; Yamartino, J. M.; Zheng, M.; Zobernig, G.

    1997-02-01

    The total cross section and the forward-backward asymmetry for the process e+e- -> μ+μ-(nγ) are measured in the energy range 20-136 GeV by reconstructing the effective centre-of-mass energy after initial state radiation. The analysis is based on the data recorded with the ALEPH detector at LEP between 1990 and 1995, corresponding to a total integrated luminosity of 143.5 pb-1. Two different approaches are used: in the first one an exclusive selection of events with hard initial state radiation in the energy range 20-88 GeV is directly compared with the Standard Model predictions showing good agreement. In the second one, all events are used to obtain a precise measurement of the energy dependence of σ0 and σ0 and A0FB from a model independent fit, enabling constraints to be placed on models with extra Z bosons.

  8. Study of the muon-pair production at centre-of-mass energies from 20 to 136 GeV with the ALEPH detector

    CERN Document Server

    Barate, R; Décamp, D; Ghez, P; Goy, C; Lees, J P; Lucotte, A; Minard, M N; Nief, J Y; Odier, P; Pietrzyk, B; Casado, M P; Chmeissani, M; Comas, P; Crespo, J M; Delfino, M C; Fernández, E; Fernández-Bosman, M; Garrido, L; Juste, A; Martínez, M; Orteu, S; Padilla, C; Park, I C; Pascual, A; Perlas, J A; Riu, I; Sánchez, F; Teubert, F; Colaleo, A; Creanza, D; De Palma, M; Gelao, G; Iaselli, Giuseppe; Maggi, G; Maggi, M; Marinelli, N; Nuzzo, S; Ranieri, A; Raso, G; Ruggieri, F; Selvaggi, G; Silvestris, L; Tempesta, P; Tricomi, A; Zito, G; Huang, X; Lin, J; Ouyang, Q; Wang, T; Xie, Y; Xu, R; Xue, S; Zhang, J; Zhang, L; Zhao, W; Abbaneo, D; Alemany, R; Bazarko, A O; Bright-Thomas, P G; Cattaneo, M; Cerutti, F; Drevermann, H; Forty, Roger W; Frank, M; Hagelberg, R; Harvey, J; Janot, P; Jost, B; Kneringer, E; Knobloch, J; Lehraus, Ivan; Lutters, G; Mato, P; Minten, Adolf G; Miquel, R; Mir, L M; Moneta, L; Oest, T; Pacheco, A; Pusztaszeri, J F; Ranjard, F; Rensing, P E; Rizzo, G; Rolandi, Luigi; Schlatter, W D; Schmelling, M; Schmitt, M; Schneider, O; Tejessy, W; Tomalin, I R; Venturi, A; Wachsmuth, H W; Wagner, A; Ajaltouni, Ziad J; Barrès, A; Boyer, C; Falvard, A; Ferdi, C; Gay, P; Guicheney, C; Henrard, P; Jousset, J; Michel, B; Monteil, S; Montret, J C; Pallin, D; Perret, P; Podlyski, F; Proriol, J; Rosnet, P; Rossignol, J M; Fearnley, Tom; Hansen, J B; Hansen, J D; Hansen, J R; Hansen, P H; Nilsson, B S; Rensch, B; Wäänänen, A; Daskalakis, G; Kyriakis, A; Markou, C; Simopoulou, Errietta; Vayaki, Anna; Zachariadou, K; Blondel, A; Brient, J C; Machefert, F P; Rougé, A; Rumpf, M; Valassi, Andrea; Videau, H L; Focardi, E; Parrini, G; Corden, M; Georgiopoulos, C H; Jaffe, D E; Antonelli, A; Bencivenni, G; Bologna, G; Bossi, F; Campana, P; Capon, G; Casper, David William; Chiarella, V; Felici, G; Laurelli, P; Mannocchi, G; Murtas, F; Murtas, G P; Passalacqua, L; Pepé-Altarelli, M; Curtis, L; Dorris, S J; Halley, A W; Knowles, I G; Lynch, J G; O'Shea, V; Raine, C; Scarr, J M; Smith, K; Teixeira-Dias, P; Thompson, A S; Thomson, E; Thomson, F; Turnbull, R M; Becker, U; Geweniger, C; Graefe, G; Hanke, P; Hansper, G; Hepp, V; Kluge, E E; Putzer, A; Schmidt, M; Sommer, J; Tittel, K; Werner, S; Wunsch, M; Beuselinck, R; Binnie, David M; Cameron, W; Dornan, Peter J; Girone, M; Goodsir, S M; Martin, E B; Morawitz, P; Moutoussi, A; Nash, J; Sedgbeer, J K; Stacey, A M; Williams, M D; Dissertori, G; Girtler, P; Kuhn, D; Rudolph, G; Betteridge, A P; Bowdery, C K; Colrain, P; Crawford, G; Finch, A J; Foster, F; Hughes, G; Jones, R W L; Sloan, Terence; Whelan, E P; Williams, M I; Hoffmann, C; Jakobs, K; Kleinknecht, K; Quast, G; Renk, B; Rohne, E; Sander, H G; Van Gemmeren, P; Zeitnitz, C; Aubert, Jean-Jacques; Benchouk, C; Bonissent, A; Bujosa, G; Calvet, D; Carr, J; Coyle, P; Diaconu, C A; Konstantinidis, N P; Leroy, O; Payre, P; Rousseau, D; Talby, M; Sadouki, A; Thulasidas, M; Tilquin, A; Trabelsi, K; Aleppo, M; Ragusa, F; Berlich, R; Blum, Walter; Büscher, V; Dietl, H; Dydak, Friedrich; Ganis, G; Gotzhein, C; Kroha, H; Lütjens, G; Lutz, Gerhard; Männer, W; Moser, H G; Richter, R H; Rosado-Schlosser, A; Schael, S; Settles, Ronald; Seywerd, H C J; Saint-Denis, R; Stenzel, H; Wiedenmann, W; Wolf, G; Boucrot, J; Callot, O; Chen, S; Cordier, A; Davier, M; Duflot, L; Grivaz, J F; Heusse, P; Höcker, A; Jacholkowska, A; Jacquet, M; Kim, D W; Le Diberder, F R; Lefrançois, J; Lutz, A M; Nikolic, I A; Park, H J; Schune, M H; Simion, S; Veillet, J J; Videau, I; Zerwas, D; Azzurri, P; Bagliesi, G; Batignani, G; Bettarini, S; Bozzi, C; Calderini, G; Carpinelli, M; Ciocci, M A; Ciulli, V; Dell'Orso, R; Fantechi, R; Ferrante, I; Giassi, A; Gregorio, A; Ligabue, F; Lusiani, A; Marrocchesi, P S; Messineo, A; Palla, Fabrizio; Sanguinetti, G; Sciabà, A; Spagnolo, P; Steinberger, Jack; Tenchini, Roberto; Tonelli, G; Vannini, C; Verdini, P G; Blair, G A; Bryant, L M; Chambers, J T; Gao, Y; Green, M G; Medcalf, T; Perrodo, P; Strong, J A; Von Wimmersperg-Töller, J H; Botterill, David R; Clifft, R W; Edgecock, T R; Haywood, S; Maley, P; Norton, P R; Thompson, J C; Wright, A E; Bloch-Devaux, B; Colas, P; Kozanecki, Witold; Lançon, E; Lemaire, M C; Locci, E; Pérez, P; Rander, J; Renardy, J F; Roussarie, A; Schuller, J P; Schwindling, J; Trabelsi, A; Vallage, B; Black, S N; Dann, J H; Kim, H Y; Litke, A M; McNeil, M A; Taylor, G; Booth, C N; Boswell, R; Brew, C A J; Cartwright, S L; Combley, F; Kelly, M S; Lehto, M H; Newton, W M; Reeve, J; Thompson, L F; Affholderbach, K; Böhrer, A; Brandt, S; Cowan, G D; Grupen, Claus; Saraiva, P; Smolik, L; Stephan, F; Apollonio, M; Bosisio, L; Della Marina, R; Giannini, G; Gobbo, B; Musolino, G; Pütz, J; Rothberg, J E; Wasserbaech, S R; Williams, R W; Armstrong, S R; Elmer, P; Feng, Z; Ferguson, D P S; Gao, Y S; González, S; Grahl, J; Greening, T C; Hayes, O J; Hu, H; McNamara, P A; Nachtman, J M; Orejudos, W; Pan, Y B; Saadi, Y; Scott, I J; Walsh, J; Wu Sau Lan; Wu, X; Yamartino, J M; Zheng, M; Zobernig, G

    1997-01-01

    The total cross section and the forward-backward asymmetry for the process $e^+ e^- \\rightarrow \\mu^+ \\mu^- (n \\gamma)$ are measured in the energy range 20-136 GeV by reconstructing the effective centre-of-mass energy after initial state radiation. The analysis is based on the data recorded with the ALEPH detector at LEP between 1990 and 1995, corresponding to a total integrated luminosity of 143.5 $\\mathrm{pb}^{-1}$. Two different approaches are used: in the first one an exclusive selection of events with hard initial state radiation in the energy range 20-88 GeV is directly compared with the Standard Model predictions showing good agreement. In the second one, all events are used to obtain a precise measurement of the energy dependence of $\\sigma^0$ and $A_{\\mathrm{FB}}^0$ from a model independent fit, enabling constraints to be placed on models with extra Z bosons.

  9. Charge resolution of a Hungarian brand CR-39(MA-ND) detector exposed to a 84Kr beam of energy 0.45A GeV

    International Nuclear Information System (INIS)

    Bhattacharyya, D.P.; Basu, B.; Pal, P.; Mukherjee, S.C.; Ganguly, A.K.; Hunyady, I.

    1990-01-01

    The Hungarian brand CR-39(MA-ND) plastic has been irradiated with a 84 Kr ion beam of energy 0.45A GeV and etched for four different etching times, viz. 4, 6, 8 and 12 h. The estimated charge resolution of a CR-39(MA-ND) detector for registering the nuclei 32 ≤ Z ≤ 36 was found to be 0.18e which is close to our previous observation of the response with a CR-39(DOP) Pershore made plate exposed to a 1.88A GeV 56 Fe beam at the Lawrence Berkeley Laboratory's Bevalac. It was found that the estimated etch rate ratio V T /V G is independent of etching time. The cone length and minor axis of the etch pits has been found to increase with etching time. (orig.)

  10. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  11. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    CERN Document Server

    Cesareo, R; Castellano, A

    1999-01-01

    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd sub 1 sub - sub x Zn sub x Te and HgI sub 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 mu m, an area of about 2x3 mm sup 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 mu m. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching approx 9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd sub 1 sub - sub x Zn sub x Te detector ha...

  12. SiliPET: Design of an ultra-high resolution small animal PET scanner based on stacks of semi-conductor detectors

    International Nuclear Information System (INIS)

    Cesca, N.; Auricchio, N.; Di Domenico, G.; Zavattini, G.; Malaguti, R.; Andritschke, R.; Kanbach, G.; Schopper, F.

    2007-01-01

    We studied with Monte Carlo simulations, using the EGSnrc code, a new scanner for small animal positron emission tomography (PET), based on stacks of double-sided semiconductor detectors. Each stack is composed of planar detectors with dimension 70x60x1 mm 3 and orthogonal strips on both sides with 500 μm pitch to read the two interaction coordinates, the third being the detector number in the stack. Multiple interactions in a stack are discarded. In this way, we achieve a precise determination of the first interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results of scanners based on Si planar detectors are presented and the initial tomographic reconstructions demonstrate very good spatial resolution limited only by the positron range. This suggests that, this is a promising new approach for small animal PET imaging. We are testing some double-sided silicon detectors, equipped with 128 orthogonal p and n strips on opposite sides using VATAGP3 ASIC by IDEAS

  13. Development of a stable and sensitive semiconductor detector by using a mixture of lead(II) iodide and lead monoxide for NDT radiation dose detection

    Science.gov (United States)

    Heo, Y. J.; Kim, K. T.; Han, M. J.; Moon, C. W.; Kim, J. E.; Park, J. K.; Park, S. K.

    2018-03-01

    .59% and 0.25% at 6 and 15 MV, respectively. Based on its selection in the reproducibility assessment, the 15 wt% PbO detector showed no dependence on the dose-rate changes, with R-SD semiconductors.

  14. 'EXTSANGLE' - an extension of the efficiency conversion program 'SOLANG' to sources with a diameter larger than that of the Ge-detector

    International Nuclear Information System (INIS)

    Mihaljevic, N.; Jovanovic, S.; Vukotic, P.

    1993-01-01

    The computer program SOLANG, originally developed by MOENS et al. for the efficiency conversion via effective solid angles (Ω-bar), was extended to cylindrical sources with a diameter larger than that of the Ge-detector. New program, named EXTSANGLE, was experimentally checked in three laboratories. For the most unfavourable case from the standpoint of the accuracy of Ω-bar (bulky source counted at the top of detector), discrepancies were below 7% in the whole range of gamma-energies considered (88-1115 keV), with an average of 3-4%. EXTSANGLE is extensive and flexible with respect to the data input, storage and output, thus contributing to the automation of a gamma-spectrometry laboratory dealing, for instance, with the k 0 -NAA and/or environmental radioactivity monitoring. (author) 9 refs.; 3 figs.; 1 tab

  15. Matching Ge detector element geometry to sample size and shape: One does not fit all exclamation point

    International Nuclear Information System (INIS)

    Keyser, R.M.; Twomey, T.R.; Sangsingkeow, P.

    1998-01-01

    For 25 yr, coaxial germanium detector performance has been specified using the methods and values specified in Ref. 1. These specifications are the full-width at half-maximum (FWHM), FW.1M, FW.02M, peak-to-Compton ratio, and relative efficiency. All of these measurements are made with a 60 Co source 25 cm from the cryostat endcap and centered on the axis of the detector. These measurements are easy to reproduce, both because they are simple to set up and use a common source. These standard tests have been useful in guiding the user to an appropriate detector choice for the intended measurement. Most users of germanium gamma-ray detectors do not make measurements in this simple geometry. Germanium detector manufacturers have worked over the years to make detectors with better resolution, better peak-to-Compton ratios, and higher efficiency--but all based on measurements using the IEEE standard. Advances in germanium crystal growth techniques have made it relatively easy to provide detector elements of different shapes and sizes. Many of these different shapes and sizes can give better results for a specific application than other shapes and sizes. But, the detector specifications must be changed to correspond to the actual application. Both the expected values and the actual parameters to be specified should be changed. In many cases, detection efficiency, peak shape, and minimum detectable limit for a particular detector/sample combination are valuable specifications of detector performance. For other situations, other parameters are important, such as peak shape as a function of count rate. In this work, different sample geometries were considered. The results show the variation in efficiency with energy for all of these sample and detector geometries. The point source at 25 cm from the endcap measurement allows the results to be compared with the currently given IEEE criteria. The best sample/detector configuration for a specific measurement requires more and

  16. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  17. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  18. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)

    Energy Technology Data Exchange (ETDEWEB)

    Poklonski, N. A., E-mail: poklonski@bsu.by; Vyrko, S. A.; Poklonskaya, O. N. [Belarusian State University (Belarus); Zabrodskii, A. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The electrostatic model of ionization equilibrium between hydrogen-like acceptors and v-band holes in crystalline covalent p-type semiconductors is developed. The range of applicability of the model is the entire insulator side of the insulator–metal (Mott) phase transition. The density of the spatial distribution of acceptor- and donor-impurity atoms and holes over a crystal was assumed to be Poissonian and the fluctuations of their electrostatic potential energy, to be Gaussian. The model takes into account the effect of a decrease in the energy of affinity of an ionized acceptor to a v-band hole due to Debye–Hückel ion screening by both free v-band holes and localized holes hopping over charge states (0) and (–1) of acceptors in the acceptor band. All donors are in charge state (+1) and are not directly involved in the screening, but ensure the total electroneutrality of a sample. In the quasiclassical approximation, analytical expressions for the root-mean-square fluctuation of the v-band hole energy W{sub p} and effective acceptor bandwidth W{sub a} are obtained. In calculating W{sub a}, only fluctuations caused by the Coulomb interaction between two nearest point charges (impurity ions and holes) are taken into account. It is shown that W{sub p} is lower than W{sub a}, since electrostatic fluctuations do not manifest themselves on scales smaller than the average de Broglie wavelength of a free hole. The delocalization threshold for v-band holes is determined as the sum of the diffusive-percolation threshold and exchange energy of holes. The concentration of free v-band holes is calculated at the temperature T{sub j} of the transition from dc band conductivity to conductivity implemented via hopping over acceptor states, which is determined from the virial theorem. The dependence of the differential energy of the thermal ionization of acceptors at the temperature 3T{sub j}/2 on their concentration N and degree of compensation K (the ratio between the

  19. The detector control system of the ATLAS SemiConductor tracker during macro-assembly and integration

    Czech Academy of Sciences Publication Activity Database

    Abdesselam, A.; Barr, A.; Basiladze, S.; Böhm, Jan; Šťastný, Jan

    2008-01-01

    Roč. 3, - (2008), P02007/1-P02007/29 ISSN 1748-0221 R&D Projects: GA MŠk LA08032; GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : solid state detectors * large detector systems for particle and astroparticle physics * detector control systems Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 0.333, year: 2008

  20. A spectrometer using semi-conductor detectors; study and applications (1963); Spectrometre utilisant les detecteurs a semi-conducteur: etudes et applications (1963)

    Energy Technology Data Exchange (ETDEWEB)

    Roux, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1963-07-01

    The low average energy, 2.5 to 3.5 eV, required to produce one hole-electron pair in a semiconductor allows an accurate measurement of the energy of the ionizing particles. A high resolution spectrometer has been built using semiconductor detectors. The limit of resolution, due to electronics associated to the detector, to the detector itself and to the source of particles is studied here. The present practical limit of resolution of the spectrometer is 1700 elementary electric charges (full width at half maximum of a ray of a spectrum) or 6 keV in terms of energy lost by a particle in a silicon detector. The physical resolution usually obtained is 20 keV (0.33 per cent) with {alpha} particles of the {sup 212}Bi (6.087 MeV). It depends a lot of the kind of detector used. Some results, concerning the background of the detectors and limit of measurements for low energies are given. Various applications are presented: spectrometry {beta}, spectrometry {gamma} and X, spectrometry of mixtures of {alpha} radioactive elements, collection of {alpha} spectra. (author) [French] La faible energie moyenne, 2,5 a 3,5 eV, necessaire pour produire une paire electron-trou dans un semi-conducteur, permet une mesure precise de l'energie des particules ionisantes. Un spectrometre a haute resolution a ete construit utilisant des detecteurs a semi-conducteur. La limitation en resolution due a l'electronique associee au detecteur, au detecteur lui-meme et a la source de particules, est etudiee. La resolution pratique limite actuelle du spectrometre est 1700 charges electriques elementaires (largeur a mi-hauteur d'une raie de spectre) ou 6 keV exprimee en energie perdue par une particule dans un detecteur au silicium. La resolution physique couramment obtenue est de 20 keV (0,33 pour cent) pour les particules {alpha} du bismuth 212 (6,087 MeV). Elle depend beaucoup du detecteur utilise. Quelques resultats sont donnes concernant le mouvement propre des detecteurs et la limitation des

  1. Production of D* mesons in photon-photon collisions at $\\sqrt{s}_{ee}$ = 183 GeV and 189 GeV using the OPAL detector at LEP

    CERN Document Server

    Patt, J

    2000-01-01

    The inclusive production of D*/sup +or-/ mesons in photon-photon collisions has been measured using the OPAL detector at LEP at e/sup +/e/sup -/ centre-of-mass energies square root (s/sub ee/) of 183 and 189 GeV. The D*/sup +/ mesons are reconstructed in their decay to D /sup 0/ pi /sup +/ with the D/sup 0/ observed in the two decay modes K/sup -/ pi /sup +/ and K/sup -/ pi /sup +/ pi /sup -/ pi /sup +/. After background subtraction, 121+or-14 (stat.) D*/sup +or-/ events have been selected. Jets are reconstructed using a cone jet finding algorithm to separate direct and single-resolved events. Differential cross-sections d sigma /dp/sub T//sup D/* and d sigma /d eta /sup D /* as functions of the D*/sup +or-/ transverse momentum p/sub T//sup D/* and pseudorapidity eta /sup D/* are presented in the kinematic region 2

    GeV and eta /sup D/*<1.5. They are compared to next-to-leading order (NLO) perturbative QCD calculations. The total cross-section for the process e/sup +/e/sup - / to ...

  2. Spatiotemporal Monte Carlo transport methods in x-ray semiconductor detectors: application to pulse-height spectroscopy in a-Se.

    Science.gov (United States)

    Fang, Yuan; Badal, Andreu; Allec, Nicholas; Karim, Karim S; Badano, Aldo

    2012-01-01

    The authors describe a detailed Monte Carlo (MC) method for the coupled transport of ionizing particles and charge carriers in amorphous selenium (a-Se) semiconductor x-ray detectors, and model the effect of statistical variations on the detected signal. A detailed transport code was developed for modeling the signal formation process in semiconductor x-ray detectors. The charge transport routines include three-dimensional spatial and temporal models of electron-hole pair transport taking into account recombination and trapping. Many electron-hole pairs are created simultaneously in bursts from energy deposition events. Carrier transport processes include drift due to external field and Coulombic interactions, and diffusion due to Brownian motion. Pulse-height spectra (PHS) have been simulated with different transport conditions for a range of monoenergetic incident x-ray energies and mammography radiation beam qualities. Two methods for calculating Swank factors from simulated PHS are shown, one using the entire PHS distribution, and the other using the photopeak. The latter ignores contributions from Compton scattering and K-fluorescence. Comparisons differ by approximately 2% between experimental measurements and simulations. The a-Se x-ray detector PHS responses simulated in this work include three-dimensional spatial and temporal transport of electron-hole pairs. These PHS were used to calculate the Swank factor and compare it with experimental measurements. The Swank factor was shown to be a function of x-ray energy and applied electric field. Trapping and recombination models are all shown to affect the Swank factor.

  3. Maximizing signal-to-noise ratio (SNR) in 3-D large bandgap semiconductor pixelated detectors in optimal and non-optimal filtering conditions

    International Nuclear Information System (INIS)

    Rodrigues, Miesher L.; Serra, Andre da S.; He, Zhong; Zhu, Yuefeng

    2009-01-01

    3-D pixelated semiconductor detectors are used in radiation detection applications requiring spectroscopic and imaging information from radiation sources. Reconstruction algorithms used to determine direction and energy of incoming gamma rays can be improved by reducing electronic noise and using optimum filtering techniques. Position information can be improved by achieving sub-pixel resolution. Electronic noise is the limiting factor. Achieving sub-pixel resolution - position of the interaction better than one pixel pitch - in 3-D pixelated semiconductor detectors is a challenging task due to the fast transient characteristics of these signals. This work addresses two fundamental questions: the first is to determine the optimum filter, while the second is to estimate the achievable sub-pixel resolution using this filter. It is shown that the matched filter is the optimum filter when applying the signal-to-noise ratio criteria. Also, non-optimum filters are studied. The framework of 3-D waveform simulation using the Shockley-Ramo Theorem and the Hecht Equation for electron and hole trapping is presented in this work. This waveform simulator can be used to analyze current detectors as well as explore new ideas and concepts in future work. Numerical simulations show that assuming an electronic noise of 3.3 keV it is possible to subdivide the pixel region into 5x5 sub-pixels. After analyzing these results, it is suggested that sub-pixel information can also improve energy resolution. Current noise levels present the major drawback to both achieve sub-pixel resolution as well as improve energy resolution below the current limits. (author)

  4. Purification and preparation of bismuth(III) iodide for application as radiation semiconductor detector; Purificacao e preparacao do cristal semicondutor de iodeto de bismuto para aplicacao como detector de radiacao

    Energy Technology Data Exchange (ETDEWEB)

    Ferraz, Caue de Mello

    2016-11-01

    This study describes the experimental procedure of a BiI{sub 3} purification method powder, aiming a future application of these semiconductor crystals as room temperature radiation detector. The Repeated Vertical Bridgman Technique was applied for the purification, based on the melting and nucleation phenomena. An ampoule filled with a maximum of 25% by volume of BiI{sub 3} powder was mounted into the Bridgman furnace and vertically moved at a speed of 2 millimeters per hour, inside the furnace with programmed thermal gradient and temperature profile, at a temperature maximum of 530 deg C. The reduction of the impurities in the BiI{sub 3}, each purification, was analysed by Instrumental Neutron Activation Analysis (INAA), in order to evaluate the efficiency of the purification technique established in this work, for trace metal impurities. It was demonstrated that the Repeated Bridgman is effective to reduce the concentration of many impurities in BiI{sub 3}, such as Ag, As, Br, Cr, K, Mo, Na and Sb. The crystalline structure of the BiI{sub 3} crystal purified twice and third times was similar to the BiI{sub 3} pattern. However, for BiI{sub 3} powder and purified once an intensity contribution of the BiOI was observed in the diffractograms. It is known that semiconductor detectors fabricated from high purity crystal exhibit significant improvement in their performance compared to those produced from low purity crystals. (author)

  5. Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

    International Nuclear Information System (INIS)

    Rudge, A.

    1995-01-01

    A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.)

  6. Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Rudge, A. [European Organization for Nuclear Research, Geneva (Switzerland)

    1995-06-01

    A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.).

  7. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  8. Results of substitution of the Nal by a Ge detector in a simple shadow shield whole body counter

    International Nuclear Information System (INIS)

    Sahre, P.; Schoenmuth, T.; Thieme, K.

    1997-01-01

    Since 1976 a whole body counter (WBC) has been used at the Rossendorf Research Centre for measuring the internal contamination of workers. The WBC with the Germanium detector is given schematically and visually. The WBC is a shadow shield type with a tilted chair having only one detector. Table 1 contains the parameters of the WBC. It can be seen that the WBC is a simple counter. Therefore, taking into account the experiences of McCurdy, a lot of improvements were expected form the simple substitution of a HP Germanium detector for a NaI (TI) detector, i.e. despite a decrease in the sensitive detection volume, an enhancement of all quantifiable results (e.g. lower limit of detection and time for analysis of the spectrum) and above all the reliability and automation of nuclide identification were expected. (orig./SR)

  9. Results of substitution of the Nal by a Ge detector in a simple shadow shield whole body counter

    Energy Technology Data Exchange (ETDEWEB)

    Sahre, P.; Schoenmuth, T. [Nuclear Engineering and Analytics Inc. Rossendorf, Dresden (Germany); Thieme, K. [Amersham Buchler Ltd. und Co., Braunschweig (Germany)

    1997-12-01

    Since 1976 a whole body counter (WBC) has been used at the Rossendorf Research Centre for measuring the internal contamination of workers. The WBC with the Germanium detector is given schematically and visually. The WBC is a shadow shield type with a tilted chair having only one detector. Table 1 contains the parameters of the WBC. It can be seen that the WBC is a simple counter. Therefore, taking into account the experiences of McCurdy, a lot of improvements were expected form the simple substitution of a HP Germanium detector for a NaI (TI) detector, i.e. despite a decrease in the sensitive detection volume, an enhancement of all quantifiable results (e.g. lower limit of detection and time for analysis of the spectrum) and above all the reliability and automation of nuclide identification were expected. (orig./SR)

  10. SEDRX: A computer program for the simulation Si(Li) and Ge(Hp) x-ray detectors efficiency

    International Nuclear Information System (INIS)

    Benamar, M.A.; Benouali, A.; Tchantchane, A.; Azbouche, A.; Tobbeche, S. Centre de Developpement des Techniques Nucleaires, Algiers; Labo. des Techniques Nucleaires)

    1992-12-01

    The difficulties encountered in measuring the x-ray detectors efficiency has motivated to develop a computer program to simulate this parameter. this program computes the efficiency of detectors as a function of energy. the computation of this parameter is based on the fitting coefficients of absorption in the case of photoelectric, coherent and incoherent factors. These coefficients are given by Mc Master library or may be determined by the interpolation based on cubic splines

  11. Measurement of the Cross-Section for the Process $\\gamma-\\gamma$ to Proton-Antiproton at $\\sqrt{s_{ee}}$ = 183 - 189 GeV with the OPAL Detector at LEP

    CERN Document Server

    Barillari, T

    2004-01-01

    The exclusive production of proton-antiproton pairs in the collisions of two quasi-real photons has been studied using data taken at sqrt(s_ee) = 183 GeV and 189 GeV with the OPAL detector at LEP. Results are presented for proton-antiproton invariant masses, W, in the range 2.15 < W < 3.95 GeV. The cross-section measurements are compared with previous data and with recent analytic calculations based on the quark-diquark model.

  12. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  13. Electrical limitations to energy resolution in semiconductor particle detectors; Limitations electriques du pouvoir de resolution en energie des detecteurs a semi-conducteurs; Ehlektricheskie ogranicheniya razreshayushchej sposobnosti po ehnergii v poluprovodnikovykh detektorakh chastits; Limitaciones electricas en la resolucion energetica de detectores de particulas a base de semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, W L; Goulding, F S [Lawrence Radiation Laboratory, University of California, Berkeley, CA (United States)

    1962-04-15

    Based on the assumption that the noise contribution of a semiconductor detector is due solely to its bulk properties, equations are presented which indicate the theoretical limits of noise in detectoramplifier combinations. These equations show that an optimum amplifier time-constant and detector bias voltage exist for which condition the minimum noise is independent of the semiconductor resistivity. The optimum performance of a detector-amplifier system is shown to depend only upon detector area, input capacity (less detector capacity), semiconductor minority carrier lifetime and the transconductance of the amplifier input tube. A new detector structure which includes a guard-ring electrode as an integral part of the detector structure is described which has the effect of largely eliminating noise due to surface leakage. Experimental results for detector leakage and energy resolution which agree well with theory are presented. The theoretical limit of noise, expressed as full width at half maximum, is from 7 to 10 keV for 1-cm{sup 2} p-type silicon detectors at 25{sup o}C. (author) [French] Partant de l'hypothese que le bruit imputable au detecteur a semi-conducteur est du exclusivement aux proprietes fondamentales du semi-conducteur, les auteurs etablissent des equations donnant les limites theoriques du bruit dans les combinaisons detecteur-amplificateur. Ces equations montrent qu'il existe une constante de temps optimum de l'amplificateur et une tension de polarisation du detecteur, pour lesquelles le bruit minimum est independant de la resistivite du semi-conducteur. Les auteurs prouvent que l'optimum de fonctionnement d'un ensemble detecteur-amplificateur ne depend que de la surface du detecteur, de la capacite a l'entree (deduction faite de la capacite du detecteur), du porteur minoritaire du semi-conducteur, de la duree de vie et de la transconductance du tube d'entree de l'amplificateur. Ils decrivent un modele nouveau de detecteur qui comprend une

  14. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  15. The diagnosis of the gastric cancer using catheter-type semiconductor radiation detector. Comparison of diagnostic values of. beta. -emitting radionuclide label with. gamma. -emitting label

    Energy Technology Data Exchange (ETDEWEB)

    Sassa, R; Iwase, T [Asahi Life Foundation, Tokyo (Japan). Inst. for Adult Diseases; Sugita, T; Iio, M

    1975-06-01

    The diagnostic usefulness of /sup 32/P-phosphate for human gastric cancer, using a catheter-type semiconductor radiation detector (CASRAD) combined with gastrofiberscope technique, has already been reported by the authors. They have in addition used sup(99m)Tc-bleomycin, sup(99m)Tc-tetracycline in the diagnosis of experimental rabbit gastric cancer, too. In the present study, further refinement of the technique for the ..beta..-ray labeled substance (/sup 32/P-phosphate) for detection of the gastric cancer was compared with that of ..gamma..-ray labeled substance (sup(99m)Tc-tetracycline). A more correct diagnosis of the gastric cancer by in vivo measurement of beta activity could be obtained, when the collimater, made of stainless steel, was attached to the top of the detector. In this way contribution to the count from the adjacent tissues or organs could be eliminated. They were unable to produce an effective and useful collimater for ..gamma..-ray labeled substance which could to be used safely in vivo. Because of the unsatisfactory collimater, radioactivities of the adjacent organs caused on increase in the radioactivity of the background. Therefore inspite of the recent introduction of various sup(99m)Tc-tumor agents, these labels were not applicable to the CASRAD method. For such a small detector system, ..beta..-labels, represented by /sup 32/P-phosphate, was still prefererable to ..gamma..-labels.

  16. Infrared detectors

    CERN Document Server

    Rogalski, Antonio

    2010-01-01

    This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

  17. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A; Rosencrantz, B

    1964-10-15

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described.

  18. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    International Nuclear Information System (INIS)

    Lauber, A.; Rosencrantz, B.

    1964-10-01

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described

  19. ZnCdMgSe as a Materials Platform for Advanced Photonic Devices: Broadband Quantum Cascade Detectors and Green Semiconductor Disk Lasers

    Science.gov (United States)

    De Jesus, Joel

    The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of

  20. The measurement of the neutrino helicity in the decay of sup(152m)Eu with Ge(lI) detector

    International Nuclear Information System (INIS)

    Vylov, Ts.; Brudanin, V.B.; Gorozhankin, V.M.

    1984-01-01

    The new experiment on the determination of the neutrino helicity from the decay of sup(152 m)Eu by the measurement of the 963.4 keV gamma-ray circular polarization (Hsub(γ)) was performed. The theoretical estimate of Hsub(γ) taking into accout not only the intrinsic level width and K-capture but also the thermal motion and the capture in a hiqher shells is - 0.93, which obiously disagrees with the results of previous experiments. The new measurement of Hsub(γ) with a 100 cm 3 Ge(Li) detector has given the value-0.87+-0.10, which is in good agreement with both the above-mentioned estimate and the assumption of the neutrino helicity to be Hsub(ν)=-1

  1. Charged-particle multiplicities in $pp$ interactions at $\\sqrt{s}$ = 900 GeV measured with the ATLAS detector at the LHC

    CERN Document Server

    Aad, G.; Abbott, B.; Abdallah, J.; Abdelalim, A.A.; Abdesselam, A.; Abdinov, O.; Abi, B.; Abolins, M.; Abramowicz, H.; Abreu, H.; Acerbi, E.; Acharya, B.S.; Ackers, M.; Adams, D.L.; Addy, T.N.; Adelman, J.; Aderholz, M.; Adorisio, C.; Adragna, P.; Adye, T.; Aefsky, S.; Aguilar-Saavedra, J.A.; Aharrouche, M.; Ahlen, S.P.; Ahles, F.; Ahmad, A.; Ahmed, H.; Ahsan, M.; Aielli, G.; Akdogan, T.; Akesson, P.F.; Akesson, T.P.A.; Akimoto, G.; Akimov, A.V.; Aktas, A.; Alam, M.S.; Alam, M.A.; Albert, J.; Albrand, S.; Aleksa, M.; Aleksandrov, I.N.; Aleppo, M.; Alessandria, F.; Alexa, C.; Alexander, G.; Alexandre, G.; Alexopoulos, T.; Alhroob, M.; Aliev, M.; Alimonti, G.; Alison, J.; Aliyev, M.; Allport, P.P.; Allwood-Spiers, S.E.; Almond, J.; Aloisio, A.; Alon, R.; Alonso, A.; Alonso, J.; Alviggi, M.G.; Amako, K.; Amaral, P.; Ambrosini, G.; Ambrosio, G.; Amelung, C.; Ammosov, V.V.; Amorim, A.; Amoros, G.; Amram, N.; Anastopoulos, C.; Andeen, T.; Anders, C.F.; Anderson, K.J.; Andreazza, A.; Andrei, V.; Andrieux, M.L.; Anduaga, X.S.; Angerami, A.; Anghinolfi, F.; Anjos, N.; Annovi, A.; Antonaki, A.; Antonelli, M.; Antonelli, S.; Antos, J.; Antunovic, B.; Anulli, F.; Aoun, S.; Arabidze, G.; Aracena, I.; Arai, Y.; Arce, A.T.H.; Archambault, J.P.; Arfaoui, S.; Arguin, J.F.; Argyropoulos, T.; Arik, E.; Arik, M.; Armbruster, A.J.; Arms, K.E.; Armstrong, S.R.; Arnaez, O.; Arnault, C.; Artamonov, A.; Arutinov, D.; Asai, M.; Asai, S.; Asfandiyarov, R.; Ask, S.; Asman, B.; Asner, D.; Asquith, L.; Assamagan, K.; Astbury, A.; Astvatsatourov, A.; Athar, B.; Atoian, G.; Aubert, B.; Auerbach, B.; Auge, E.; Augsten, K.; Aurousseau, M.; Austin, N.; Avolio, G.; Avramidou, R.; Axen, D.; Ay, C.; Azuelos, G.; Azuma, Y.; Baak, M.A.; Baccaglioni, G.; Bacci, C.; Bach, A.M.; Bachacou, H.; Bachas, K.; Bachy, G.; Backes, M.; Badescu, E.; Bagnaia, P.; Bai, Y.; Bailey, D.C.; Bain, T.; Baines, J.T.; Baker, O.K.; Baker, M.D.; Baker, S.; Baltasar Dos Santos Pedrosa, F.; Banas, E.; Banerjee, P.; Banerjee, S.; Banfi, D.; Bangert, A.; Bansal, V.; Baranov, S.P.; Baranov, S.; Barashkou, A.; Barber, T.; Barberio, E.L.; Barberis, D.; Barbero, M.; Bardin, D.Y.; Barillari, T.; Barisonzi, M.; Barklow, T.; Barlow, N.; Barnett, B.M.; Barnett, R.M.; Baroncelli, A.; Barone, M.; Barr, A.J.; Barreiro, F.; Barreiro Guimaraes da Costa, J.; Barrillon, P.; Bartheld, V.; Bartko, H.; Bartoldus, R.; Bartsch, D.; Bates, R.L.; Bathe, S.; Batkova, L.; Batley, J.R.; Battaglia, A.; Battistin, M.; Battistoni, G.; Bauer, F.; Bawa, H.S.; Bazalova, M.; Beare, B.; Beau, T.; Beauchemin, P.H.; Beccherle, R.; Becerici, N.; Bechtle, P.; Beck, G.A.; Beck, H.P.; Beckingham, M.; Becks, K.H.; Beddall, A.J.; Beddall, A.; Bednyakov, V.A.; Bee, C.; Begel, M.; Behar Harpaz, S.; Behera, P.K.; Beimforde, M.; Belanger, G.A.N.; Belanger-Champagne, C.; Belhorma, B.; Bell, P.J.; Bell, W.H.; Bella, G.; Bellagamba, L.; Bellina, F.; Bellomo, G.; Bellomo, M.; Belloni, A.; Belotskiy, K.; Beltramello, O.; Belymam, A.; Ben Ami, S.; Benary, O.; Benchekroun, D.; Benchouk, C.; Bendel, M.; Benedict, B.H.; Benekos, N.; Benhammou, Y.; Benincasa, G.P.; Benjamin, D.P.; Benoit, M.; Bensinger, J.R.; Benslama, K.; Bentvelsen, S.; Beretta, M.; Berge, D.; Bergeaas Kuutmann, E.; Berger, N.; Berghaus, F.; Berglund, E.; Beringer, J.; Bernardet, K.; Bernat, P.; Bernhard, R.; Bernius, C.; Berry, T.; Bertin, A.; Bertinelli, F.; Bertolucci, S.; Besana, M.I.; Besson, N.; Bethke, S.; Bianchi, R.M.; Bianco, M.; Biebel, O.; Bieri, M.; Biesiada, J.; Biglietti, M.; Bilokon, H.; Binder, M.; Bindi, M.; Binet, S.; Bingul, A.; Bini, C.; Biscarat, C.; Bischof, R.; Bitenc, U.; Black, K.M.; Blair, R.E.; Blanch, O.; Blanchard, J.B.; Blanchot, G.; Blocker, C.; Blocki, J.; Blondel, A.; Blum, W.; Blumenschein, U.; Boaretto, C.; Bobbink, G.J.; Bocci, A.; Bocian, D.; Bock, R.; Boehler, M.; Boehm, M.; Boek, J.; Boelaert, N.; Boser, S.; Bogaerts, J.A.; Bogouch, A.; Bohm, C.; Bohm, J.; Boisvert, V.; Bold, T.; Boldea, V.; Boldyrev, A.; Bondarenko, V.G.; Bondioli, M.; Bonino, R.; Boonekamp, M.; Boorman, G.; Boosten, M.; Booth, C.N.; Booth, P.S.L.; Booth, P.; Booth, J.R.A.; Bordoni, S.; Borer, C.; Borer, K.; Borisov, A.; Borissov, G.; Borjanovic, I.; Borroni, S.; Bos, K.; Boscherini, D.; Bosman, M.; Boterenbrood, H.; Botterill, D.; Bouchami, J.; Boudreau, J.; Bouhova-Thacker, E.V.; Boulahouache, C.; Bourdarios, C.; Boveia, A.; Boyd, J.; Boyer, B.H.; Boyko, I.R.; Bozhko, N.I.; Bozovic-Jelisavcic, I.; Braccini, S.; Bracinik, J.; Braem, A.; Brambilla, E.; Branchini, P.; Brandenburg, G.W.; Brandt, A.; Brandt, A.; Brandt, G.; Brandt, O.; Bratzler, U.; Brau, B.; Brau, J.E.; Braun, H.M.; Bravo, S.; Brelier, B.; Bremer, J.; Brenner, R.; Bressler, S.; Breton, D.; Brett, N.D.; Bright-Thomas, P.G.; Britton, D.; Brochu, F.M.; Brock, I.; Brock, R.; Brodbeck, T.J.; Brodet, E.; Broggi, F.; Bromberg, C.; Brooijmans, G.; Brooks, W.K.; Brown, G.; Brubaker, E.; Bruckman de Renstrom, P.A.; Bruncko, D.; Bruneliere, R.; Brunet, S.; Bruni, A.; Bruni, G.; Bruschi, M.; Buanes, T.; Bucci, F.; Buchanan, J.; Buchanan, N.J.; Buchholz, P.; Buckley, A.G.; Budagov, I.A.; Budick, B.; Buscher, V.; Bugge, L.; Buira-Clark, D.; Buis, E.J.; Bujor, F.; Bulekov, O.; Bunse, M.; Buran, T.; Burckhart, H.; Burdin, S.; Burgess, T.; Burke, S.; Busato, E.; Bussey, P.; Buszello, C.P.; Butin, F.; Butler, B.; Butler, J.M.; Buttar, C.M.; Butterworth, J.M.; Byatt, T.; Caballero, J.; Cabrera Urban, S.; Caccia, M.; Caforio, D.; Cakir, O.; Calafiura, P.; Calderini, G.; Calfayan, P.; Calkins, R.; Caloba, L.P.; Caloi, R.; Calvet, D.; Camard, A.; Camarri, P.; Cambiaghi, M.; Cameron, D.; Cammin, J.; Campana, S.; Campanelli, M.; Canale, V.; Canelli, F.; Canepa, A.; Cantero, J.; Capasso, L.; Capeans Garrido, M.D.M.; Caprini, I.; Caprini, M.; Caprio, M.; Capua, M.; Caputo, R.; Caramarcu, C.; Cardarelli, R.; Cardiel Sas, L.; Carli, T.; Carlino, G.; Carminati, L.; Caron, B.; Caron, S.; Carpentieri, C.; Carrillo Montoya, G.D.; Carron Montero, S.; Carter, A.A.; Carter, J.R.; Carvalho, J.; Casadei, D.; Casado, M.P.; Cascella, M.; 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Smakhtin, V.; Small, A.; Smirnov, S.Yu.; Smirnov, Y.; Smirnova, L.N.; Smirnova, O.; Smith, B.C.; Smith, D.; Smith, K.M.; Smizanska, M.; Smolek, K.; Snesarev, A.A.; Snow, S.W.; Snow, J.; Snuverink, J.; Snyder, S.; Soares, M.; Sobie, R.; Sodomka, J.; Soffer, A.; Solans, C.A.; Solar, M.; Solc, J.; Solfaroli Camillocci, E.; Solodkov, A.A.; Solovyanov, O.V.; Soluk, R.; Sondericker, J.; Sopko, V.; Sopko, B.; Sorbi, M.; Sosebee, M.; Soukharev, A.; Spagnolo, S.; Spano, F.; Speckmayer, P.; Spencer, E.; Spighi, R.; Spigo, G.; Spila, F.; Spiriti, E.; Spiwoks, R.; Spogli, L.; Spousta, M.; Spreitzer, T.; Spurlock, B.; Denis, R.D.St.; Stahl, T.; Stahlman, J.; Stamen, R.; Stancu, S.N.; Stanecka, E.; Stanek, R.W.; Stanescu, C.; Stapnes, S.; Starchenko, E.A.; Stark, J.; Staroba, P.; Starovoitov, P.; Stastny, J.; Staude, A.; Stavina, P.; Stavropoulos, G.; Steele, G.; Stefanidis, E.; Steinbach, P.; Steinberg, P.; Stekl, I.; Stelzer, B.; Stelzer, H.J.; Stelzer-Chilton, O.; Stenzel, H.; Stevenson, K.; Stewart, G.; Stewart, T.D.; Stiller, W.; Stockmanns, T.; Stockton, M.C.; Stodulski, M.; Stoerig, K.; Stoicea, G.; Stonjek, S.; Strachota, P.; Stradling, A.R.; Straessner, A.; Strandberg, J.; Strandberg, S.; Strandlie, A.; Strauss, M.; Striegel, D.; Strizenec, P.; Strohmer, R.; Strom, D.M.; Strong, J.A.; Stroynowski, R.; Strube, J.; Stugu, B.; Stumer, I.; Soh, D.A.; Su, D.; Subramania, S.; Sugaya, Y.; Sugimoto, T.; Suhr, C.; Suk, M.; Sulin, V.V.; Sultansoy, S.; Sumida, T.; Sun, X.H.; Sundermann, J.E.; Suruliz, K.; Sushkov, S.; Susinno, G.; Sutton, M.R.; Suzuki, T.; Suzuki, Y.; Sviridov, Yu.M.; Sykora, I.; Sykora, T.; Szczygiel, R.R.; Szeless, B.; Szymocha, T.; Sanchez, J.; Ta, D.; Taboada Gameiro, S.; Tackmann, K.; Taffard, A.; Tafirout, R.; Taga, A.; Takahashi, Y.; Takai, H.; Takashima, R.; Takeda, H.; Takeshita, T.; Talby, M.; Talyshev, A.; Tamsett, M.C.; Tanaka, J.; Tanaka, R.; Tanaka, S.; Tanaka, S.; Tanaka, Y.; Tappern, G.P.; Tapprogge, S.; Tardif, D.; Tarem, S.; Tarrade, F.; Tartarelli, G.F.; Tas, P.; Tasevsky, M.; Tassi, E.; Tatarkhanov, M.; Tayalati, Y.; Taylor, C.; Taylor, F.E.; Taylor, G.; Taylor, G.N.; Taylor, R.P.; Taylor, W.; Teixeira-Dias, P.; Ten Kate, H.; Teng, P.K.; Tennenbaum-Katan, Y.D.; Ter-Antonyan, R.; Terada, S.; Terashi, K.; Terron, J.; Terwort, M.; Testa, M.; Teuscher, R.J.; Tevlin, C.M.; Thadome, J.; Thioye, M.; Thoma, S.; Thomas, A.; Thomas, J.P.; Thompson, E.N.; Thompson, P.D.; Thompson, P.D.; Thompson, R.J.; Thompson, A.S.; Thomson, E.; Thun, R.P.; Tic, T.; Tikhomirov, V.O.; Tikhonov, Y.A.; Timm, S.; Timmermans, C.J.W.P.; Tipton, P.; Tique Aires Viegas, F.J.; Tisserant, S.; Tobias, J.; Toczek, B.; Todorov, T.; Todorova-Nova, S.; Toggerson, B.; Tojo, J.; Tokar, S.; Tokushuku, K.; Tollefson, K.; Tomasek, L.; Tomasek, M.; Tomoto, M.; Tompkins, D.; Tompkins, L.; Toms, K.; Tonazzo, A.; Tong, G.; Tonoyan, A.; Topfel, C.; Topilin, N.D.; Torrence, E.; Torro Pastor, E.; Toth, J.; Touchard, F.; Tovey, D.R.; Trefzger, T.; Treis, J.; Tremblet, L.; Tricoli, A.; Trigger, I.M.; Trilling, G.; Trincaz-Duvoid, S.; Trinh, T.N.; Tripiana, M.F.; Triplett, N.; Trischuk, W.; Trivedi, A.; Trka, Z.; Trocme, B.; Troncon, C.; Trzupek, A.; Tsarouchas, C.; Tseng, J.C.L.; Tsiakiris, M.; Tsiareshka, P.V.; Tsionou, D.; Tsipolitis, G.; Tsiskaridze, V.; Tskhadadze, E.G.; Tsukerman, I.I.; Tsulaia, V.; Tsung, J.W.; Tsuno, S.; Tsybychev, D.; Tuggle, J.M.; Turala, M.; Turecek, D.; Turk Cakir, I.; Turlay, E.; Tuts, P.M.; Twomey, M.S.; Tylmad, M.; Tyndel, M.; Typaldos, D.; Tyrvainen, H.; Tzamarioudaki, E.; Tzanakos, G.; Uchida, K.; Ueda, I.; Ugland, M.; Uhlenbrock, M.; Uhrmacher, M.; Ukegawa, F.; Unal, G.; Underwood, D.G.; Undrus, A.; Unel, G.; Unno, Y.; Urbaniec, D.; Urkovsky, E.; Urquijo, P.; Urrejola, P.; Usai, G.; Uslenghi, M.; Vacavant, L.; Vacek, V.; Vachon, B.; Vahsen, S.; Valderanis, C.; Valenta, J.; Valente, P.; Valentinetti, S.; Valkar, S.; Valladolid Gallego, E.; Vallecorsa, S.; Valls Ferrer, J.A.; Van Berg, R.; van der Graaf, H.; van der Kraaij, E.; van der Poel, E.; Van Der Ster, D.; Van Eijk, B.; van Eldik, N.; van Gemmeren, P.; van Kesteren, Z.; van Vulpen, I.; Vandelli, W.; Vandoni, G.; Vaniachine, A.; Vankov, P.; Vannucci, F.; Varela Rodriguez, F.; Vari, R.; Varnes, E.W.; Varouchas, D.; Vartapetian, A.; Varvell, K.E.; Vasilyeva, L.; Vassilakopoulos, V.I.; Vazeille, F.; Vegni, G.; Veillet, J.J.; Vellidis, C.; Veloso, F.; Veness, R.; Veneziano, S.; Ventura, A.; Ventura, D.; Ventura, S.; Venturi, M.; Venturi, N.; Vercesi, V.; Verducci, M.; Verkerke, W.; Vermeulen, J.C.; Vertogardov, L.; Vetterli, M.C.; Vichou, I.; Vickey, T.; Viehhauser, G.H.A.; Villa, M.; Villani, E.G.; Villaplana Perez, M.; Vilucchi, E.; Vincent, P.; Vincter, M.G.; Vinek, E.; Vinogradov, V.B.; Virchaux, M.; Viret, S.; Virzi, J.; Vitale, A.; Vitells, O.; Vivarelli, I.; Vives Vaque, F.; Vlachos, S.; Vlasak, M.; Vlasov, N.; Vogel, A.; Vogt, H.; Vokac, P.; Vollmer, C.F.; Volpi, M.; Volpini, G.; von der Schmitt, H.; von Loeben, J.; von Radziewski, H.; von Toerne, E.; Vorobel, V.; Vorobiev, A.P.; Vorwerk, V.; Vos, M.; Voss, K.C.; Voss, R.; Voss, T.T.; Vossebeld, J.H.; Vovenko, A.S.; Vranjes, N.; Vranjes Milosavljevic, M.; Vrba, V.; Vreeswijk, M.; Vu Anh, T.; Vuaridel, B.; Vudragovic, D.; Vuillermet, R.; Vukotic, I.; Waananen, A.; Wagner, P.; Wahlen, H.; Walbersloh, J.; Walder, J.; Walker, R.; Walkowiak, W.; Wall, R.; Walsh, S.; Wang, C.; Wang, H.; Wang, J.; Wang, J.C.; Wang, M.W.; Wang, S.M.; Wappler, F.; Warburton, A.; Ward, C.P.; Warsinsky, M.; Wastie, R.; Watkins, P.M.; Watson, A.T.; Watson, M.F.; Watts, G.; Watts, S.; Waugh, A.T.; Waugh, B.M.; Webel, M.; Weber, G.; Weber, J.; Weber, M.D.; Weber, M.; Weber, M.S.; Weber, P.; Weidberg, A.R.; Weingarten, J.; Weiser, C.; Wellenstein, H.; Wellisch, H.P.; Wells, P.S.; Wen, M.; Wenaus, T.; Wendler, S.; Wengler, T.; Wenig, S.; Wermes, N.; Werner, M.; Werner, P.; Werth, M.; Werthenbach, U.; Wessels, M.; Whalen, K.; Wheeler-Ellis, S.J.; Whitaker, S.P.; White, A.; White, M.J.; White, S.; Whitehead, S.R.; Whiteson, D.; Whittington, D.; Wicek, F.; Wicke, D.; Wickens, F.J.; Wiedenmann, W.; Wielers, M.; Wienemann, P.; Wiesmann, M.; Wiesmann, M.; Wiglesworth, C.; Wiik, L.A.M.; Wildauer, A.; Wildt, M.A.; Wilhelm, I.; Wilkens, H.G.; Williams, E.; Williams, H.H.; Willis, W.; Willocq, S.; Wilson, J.A.; Wilson, M.G.; Wilson, A.; Wingerter-Seez, I.; Winklmeier, F.; Wittgen, M.; Woehrling, E.; Wolter, M.W.; Wolters, H.; Wosiek, B.K.; Wotschack, J.; Woudstra, M.J.; Wraight, K.; Wright, C.; Wright, D.; Wrona, B.; Wu, S.L.; Wu, X.; Wuestenfeld, J.; Wulf, E.; Wunstorf, R.; Wynne, B.M.; Xaplanteris, L.; Xella, S.; Xie, S.; Xie, Y.; Xu, D.; Xu, G.; Xu, N.; Yamada, M.; Yamamoto, A.; Yamamoto, K.; Yamamoto, S.; Yamamura, T.; Yamaoka, J.; Yamazaki, T.; Yamazaki, Y.; Yan, Z.; Yang, H.; Yang, S.; Yang, U.K.; Yang, Y.; Yang, Z.; Yao, W.M.; Yao, Y.; Yarradoddi, K.; Yasu, Y.; Ye, J.; Ye, S.; Yilmaz, M.; Yoosoofmiya, R.; Yorita, K.; Yoshida, H.; Yoshida, R.; Young, C.; Youssef, S.P.; Yu, D.; Yu, J.; Yuan, J.; Yuan, L.; Yurkewicz, A.; Zaets, V.G.; Zaidan, R.; Zaitsev, A.M.; Zajacova, Z.; Zalite, Yo.K.; Zambrano, V.; Zanello, L.; Zarzhitsky, P.; Zaytsev, A.; Zdrazil, M.; Zeitnitz, C.; Zeller, M.; Zema, P.F.; Zemla, A.; Zendler, C.; Zenin, A.V.; Zenin, O.; Zenis, T.; Zenonos, Z.; Zenz, S.; Zerwas, D.; Zevi della Porta, G.; Zhan, Z.; Zhang, H.; Zhang, J.; Zhang, Q.; Zhang, X.; Zhao, L.; Zhao, T.; Zhao, Z.; Zhemchugov, A.; Zheng, S.; Zhong, J.; Zhou, B.; Zhou, N.; Zhou, Y.; Zhu, C.G.; Zhu, H.; Zhu, Y.; Zhuang, X.; Zhuravlov, V.; Zilka, B.; Zimmermann, R.; Zimmermann, S.; Zimmermann, S.; Ziolkowski, M.; Zitoun, R.; Zivkovic, L.; Zmouchko, V.V.; Zobernig, G.; Zoccoli, A.; Zolnierowski, Y.; Zsenei, A.; zur Nedden, M.; Zutshi, V.

    2010-01-01

    The first measurements from proton-proton collisions recorded with the ATLAS detector at the LHC are presented. Data were collected in December 2009 using a minimum-bias trigger during collisions at a centre-of-mass energy of 900 GeV. The charged-particle multiplicity, its dependence on transverse momentum and pseudorapidity, and the relationship between mean transverse momentum and charged-particle multiplicity are measured for events with at least one charged particle in the kinematic range |eta|500 MeV. The measurements are compared to Monte Carlo models of proton-proton collisions and to results from other experiments at the same centre-of-mass energy. The charged-particle multiplicity per event and unit of pseudorapidity at eta = 0 is measured to be 1.333 +/- 0.003 (stat.) +/- 0.040 (syst.), which is 5-15% higher than the Monte Carlo models predict.

  2. Superconducting nanowire single photon detectors fabricated from an amorphous Mo{sub 0.75}Ge{sub 0.25} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Verma, V. B.; Lita, A. E.; Vissers, M. R.; Marsili, F.; Pappas, D. P.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2014-07-14

    We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo{sub 0.75}Ge{sub 0.25} thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.

  3. The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Chang, A.C.K.; Ross, I.M.; Norris, D.J.; Cullis, A.G.; Tang, Y.T.; Cerrina, C.; Evans, A.G.R.

    2006-01-01

    In this study we have highlighted the effect of non-uniform channel layer growth by the direct correlation of the microstructure and electrical characteristics in state-of-the-art pseudomorphic Si/SiGe p-channel metal oxide semiconductor field effect transistor devices fabricated on Si. Two nominally identical sets of devices from adjacent locations of the same wafer were found to have radically different distributions in gate threshold voltages. Due to the close proximity and narrow gate length of the devices, focused ion beam milling was used to prepare a number of thin cross-sections from each of the two regions for subsequent analysis using transmission electron microscopy. It was found that devices from the region giving a very narrow range of gate threshold voltages exhibited a uniform microstructure in general agreement with the intended growth parameters. However, in the second region, which showed a large spread in the gate threshold voltages, profound anomalies in the microstructure were observed. These anomalies consisted of fluctuations in the quality and thickness of the SiGe strained layers. The non-uniform growth of the strained SiGe layer clearly accounted for the poorly controlled threshold voltages of these devices. The results emphasize the importance of good layer growth uniformity to ensure optimum device yield

  4. Development and simulation of a Ge/Si multi-detector spectrometer for fission products traces detection in the environment

    International Nuclear Information System (INIS)

    Cagniant, Antoine

    2015-01-01

    For the verification of the Comprehensive nuclear Test Ban Treaty (CTBT), the measurement of fission products trace levels in the environment is fundamental. Such measurement is a key indicator of a nuclear explosion. For constant amelioration of these measurements, the CEA/DAM-Ile de France has developed and installed a new dedicated surface spectrometer. Named GAMMA3, it is equipped with three germanium detectors, two silicon detectors (integrated in a dedicated gas cell, the PIPSBox) and includes an optimized shielding.This shielding reduces greatly the interference of environmental photons, muons and neutrons with the detectors. The residual radiological background measured inside the shielding is the community's lowest for a surface laboratory. This set of high energy resolution detectors allows the operator to optimize a measurement according to the sample geometry, activity or nature. More precisely, a radioactive noble gas can be measured by photon/electron coincidence, an active sample can be measured by photon/photon coincidence, and a low-active sample can be measured in a high-efficiency configuration. Combining optimized shielding and optimized measurement, Minimum Detectable Activities required for CTBT certification are obtained quickly. Specifically, MDA is reached in 5 hours for 140-Ba (24 mBq), in 6h30 hours for 131m/133m-Xe (5 mBq) and in 7h15 for 133-Xe (5 mBq), when CTBT requirement is in 6 days. (author) [fr

  5. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  6. Deep-UV Emitters and Detectors Based on Lattice-Matched Cubic Oxide Semiconductors (4.2 Optoelectronics)

    Science.gov (United States)

    2015-05-14

    calculated   by   dividing   photo-­‐‑ generated  current  by  the  optical  power  spectrum  of  the   lamp .    A   UV ...the optimized parameters for growth. Efforts led to significant increases in solar?blind detector responsivity (up to 0.1 A/W) with sub-­ nanoamp...Aug-2014 Approved for Public Release; Distribution Unlimited Final Report: Deep- UV Emitters and Detectors Based on Lattice- Matched Cubic Oxide

  7. Semiconductor detector with smoothly tunable effective thickness for the study of ionization loss by moderately relativistic electrons

    Energy Technology Data Exchange (ETDEWEB)

    Shchagin, A.V., E-mail: shchagin@kipt.kharkov.ua [Kharkov Institute of Physics and Technology, Kharkov (Ukraine); Belgorod National Research University, Belgorod (Russian Federation); Shul’ga, N.F.; Trofymenko, S.V. [Kharkov Institute of Physics and Technology, Kharkov (Ukraine); Kharkov National University, Kharkov (Ukraine); Nazhmudinov, R.M.; Kubankin, A.S. [Belgorod National Research University, Belgorod (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation)

    2016-11-15

    The possibility of measurement of electrons ionization loss in Si layer of smoothly tunable thickness is shown in the proof-of-principle experiment. The Si surface-barrier detector with the depleted layer thickness controlled by the value of high voltage power supply has been used. Ionization loss spectra for electrons emitted by radioactive source {sup 207}Bi are presented and discussed. Experimental results for the most probable ionization loss in the Landau spectral peak are compared with theoretical calculations. The possibility of research of evolution of electromagnetic field of ultra-relativistic particles traversing media interface with the use of detectors with smoothly tunable thickness is proposed.

  8. Experimental MRI-SPECT insert system with Hybrid Semiconductor detectors Timepix for MR animal scanner Bruker 47/20

    Czech Academy of Sciences Publication Activity Database

    Zajíček, J.; Burian, M.; Soukup, P.; Novák, Vladimír; Macko, M.; Jakůbek, J.

    2017-01-01

    Roč. 12, January (2017), č. článku P01015. ISSN 1748-0221 Institutional support: RVO:68378297 Keywords : Gamma camera * SPECT * PET PET /CT * coronary CT angiography (CTA) * Gamma detectors (scintillators, CZT, HPG, HgI etc) * multi-modality systems * pixelated detectors and associated VLSI electronics Subject RIV: JB - Sensors, Measurment, Regulation OBOR OECD: Electrical and electronic engineering Impact factor: 1.220, year: 2016 http://iopscience.iop.org/article/10.1088/1748-0221/12/01/P01015

  9. Diagnosis of the gastric cancer by radionuclides and their labels, using catheter-type semiconductor radiation detector (CASRAD)

    Energy Technology Data Exchange (ETDEWEB)

    Sassa, R [Asahi Life Foundation, Tokyo (Japan). Inst. for Adult Diseases; Iio, M; Sugita, T

    1980-08-01

    A new method of differential diagnosis of gastric cancer was reported. After intravenous /sup 32/P administration, lesions were counted by a small catheter-type radiation detector system under gastrofiberscopic direct vision control. Optimum counting time was examined in man and it was found to be between 20 to 50 hours after intravenous administration of /sup 32/P. With the currently available technology of miniature detectors, the ..beta..-emitting carcinophilic agent was still found to be the agent of choice to this end, since ..gamma..-emitting carcinophilic agents cannot provide data originated only from the gastric mucosa in question.

  10. Advanced radiation detector development mercuric iodide, silicon with internal gain, hybrid scintillator/semiconductor detectors. Comprehensive summary report, 1976-1985

    International Nuclear Information System (INIS)

    Huth, G.C.; Dabrowski, A.J.

    1985-01-01

    Accomplishments are reported in the development of a compound semi-insulator mercuric iodide (HgI 2 ) for nuclear radiation detection and spectroscopy, early lung cancer detection and localization in the uranium miner/worker population, computer digital image processing and image reconstruction research, and a concept for multiple, filtered x-ray computed tomography scanning to reveal chemical compositional information. Another area of interest is the study of new advances in the area of silicon detectors with internal gain (''avalanche'')

  11. Resolution limits achievable with CMOS front-end in X- and γ-ray analysis with semiconductor detectors

    International Nuclear Information System (INIS)

    Manfredi, P.F.; Manghisoni, M.; Ratti, L.; Re, V.; Speziali, V.

    2003-01-01

    During the past 15 years, the CMOS technologies have provided the most widely followed approach to signal processing with microstrip detectors. In more recent times, CMOS front-end systems have been developed to acquire and process signals from pixel detectors. During the past few years, the favor toward CMOS processes in their applications in the broad area of detector signal processing has been enhanced by the technological advancement known as device scaling and by two aspects connected to it. One is the shrinking in channel length L into the deep submicron region. The second one is the related reduction in the gate-oxide thickness t ox to a few nm. The reduction in t ox has, as a consequence of primary importance, a decreased 1/f-noise contribution to the equivalent noise charge (ENC). The thinner gate-oxide and the shrinking in gate length, in some regions of operations, concur to increase the transconductance of the device, which results in a smaller ENC contribution from channel thermal noise. The goal of the present paper is to address the question of whether or not the most advanced CMOS processes may meet the requirements set by high resolution, high dynamic range applications like the energy-dispersive photon analysis with solid-state detectors of comparatively large capacitance

  12. Non destructive burn up determination of IEA-R1 reactor fuel elements by gamma-ray spectrometry using a Ge(Li) detector

    International Nuclear Information System (INIS)

    Madi Filho, T.

    1982-01-01

    A non destructive determination of burn up of low (IEA-14) and high (IEA-80) activity fuel elements used in the IEA-R1 pool reactor was made from the measured distribution of the Cs-137 gamma-ray activity in these elements. For both series of measurements a 73,7 c.c. Ge(Li) detector was used in 'well collimated' geometry. Where as IEA-14, removed from the reactor some 20 years, showed a gamma-ray spectrum essentially due to Cs-137, IEA-80, with a cooling time of 5 years, showed a more complex spectrum due to the greater number of fission products remaining. The S.I out-of-pool assembly was calibrated using Cs-137 and Co-60 point and Ag-110m plane sources. These measurements provided the necessary constants used to calculate fuel burn-up from measured relative activity distributions of fuel elements. Detailed fuel plate transmission measurements made with the Cs-137 source showed the plates to be highly homogeneous. High activity fuel elements were measured in the S.II in-pool assembly in which the detector was locate on the moveable pool bridge and the test element was positioned immediately below the detector 2.17m below the pool surface. Measurements made in the S.II assembly were normalised with respect to the measured activity of the IEA-14 element. The measured burn up of the IEA-14 and IEA-80 elements obtained in this work is 3.22.10 - 3 gms and 24.44gms. These values may be compared with respective values of 2.63.10 - 3 gms and 61.11gms given by 'total reactor energy/flux distribution' calculations. Calculated errors for the U-235 burn up are 7.4% (IEA-14) and 10.1% (IEA-80). A detailed evaluation of the errors associated with both sets of measurements is given. (Author) [pt

  13. Gamma radiation detectors for safeguards applications

    International Nuclear Information System (INIS)

    Carchon, R.; Moeslinger, M.; Bourva, L.; Bass, C.; Zendel, M.

    2007-01-01

    The IAEA uses extensively a variety of gamma radiation detectors to verify nuclear material. These detectors are part of standardized spectrometry systems: germanium detectors for High-Resolution Gamma Spectrometry (HRGS); Cadmium Zinc Telluride (CZT) detectors for Room Temperature Gamma Spectrometry (RTGS); and NaI(Tl) detectors for Low Resolution Gamma Spectrometry (LRGS). HRGS with high-purity Germanium (HpGe) detectors cooled by liquid nitrogen is widely used in nuclear safeguards to verify the isotopic composition of plutonium or uranium in non-irradiated material. Alternative cooling systems have been evaluated and electrically cooled HpGe detectors show a potential added value, especially for unattended measurements. The spectrometric performance of CZT detectors, their robustness and simplicity are key to the successful verification of irradiated materials. Further development, such as limiting the charge trapping effects in CZT to provide improved sensitivity and energy resolution are discussed. NaI(Tl) detectors have many applications-specifically in hand-held radioisotope identification devices (RID) which are used to detect the presence of radioactive material where a lower resolution is sufficient, as they benefit from a generally higher sensitivity. The Agency is also continuously involved in the review and evaluation of new and emerging technologies in the field of radiation detection such as: Peltier-cooled CdTe detectors; semiconductor detectors operating at room temperature such as HgI 2 and GaAs; and, scintillator detectors using glass fibres or LaBr 3 . A final conclusion, proposing recommendations for future action, is made

  14. Display of a high-pT H → ZZ* → eeμμ decay (mH = 130 GeV), after full simulation and reconstruction in the ATLAS detector

    CERN Multimedia

    ATLAS, Experiment

    2014-01-01

    The four leptons and the recoiling jet with ET = 135 GeV are clearly visible. Hits in the Inner Detector are shown in green for the four reconstructed leptons, both for the precision tracker (pixel and silicon micro-strip detectors) at the inner radii and for the transition radiation tracker at the outer radii. The other tracks reconstructed with pT > 0.5 GeV in the Inner Detector are shown in blue. The two electrons are depicted as reconstructed tracks in yellow and their energy deposits in each layer of the electromagnetic LAr calorimeter are shown in red. The two muons are shown as combined reconstructed tracks in orange, with the hit strips in the resistive-plate chambers and the hit drift tubes in the monitored drift-tube chambers visible as white lines in the barrel muon stations. The energy deposits from the muons in the barrel tile calorimeter can also be seen in purple.

  15. Evaluation of NDA techniques applying to the measurement of alpha-activities in medium or low level radioactive reprocessing wastes (part 5). The development of LiF coating semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Hattori, Takatoshi; Ishii, Keiichiro [Central Research Inst. of Electric Power Industry, Komae, Tokyo (Japan). Komae Research Lab.

    1988-12-01

    In order to design the neutron detection system in the non-destructive assay device applying to the measurement of alpha-activity in medium or low level radioactive reprocessing wastes, we examined the property of the LiF coating semiconductor detector applying to gamma-radiation field. The sensitivity for thermal neutron of LiF coating ion implanted detector is 1.6 cps/nv, and reduced to half in about 300 R/h gamma-radiation field. Compared with the other neutron detectors, for example proportional counters, the performance of this detector is almost similar to that of them. This new detector has a merit to be possible to use a dry battery instead of a high voltage supply. (author).

  16. Optimal configuration of a low-dose breast-specific gamma camera based on semiconductor CdZnTe pixelated detectors

    Science.gov (United States)

    Genocchi, B.; Pickford Scienti, O.; Darambara, DG

    2017-05-01

    Breast cancer is one of the most frequent tumours in women. During the ‘90s, the introduction of screening programmes allowed the detection of cancer before the palpable stage, reducing its mortality up to 50%. About 50% of the women aged between 30 and 50 years present dense breast parenchyma. This percentage decreases to 30% for women between 50 to 80 years. In these women, mammography has a sensitivity of around 30%, and small tumours are covered by the dense parenchyma and missed in the mammogram. Interestingly, breast-specific gamma-cameras based on semiconductor CdZnTe detectors have shown to be of great interest to early diagnosis. Infact, due to the high energy, spatial resolution, and high sensitivity of CdZnTe, molecular breast imaging has been shown to have a sensitivity of about 90% independently of the breast parenchyma. The aim of this work is to determine the optimal combination of the detector pixel size, hole shape, and collimator material in a low dose dual head breast specific gamma camera based on a CdZnTe pixelated detector at 140 keV, in order to achieve high count rate, and the best possible image spatial resolution. The optimal combination has been studied by modeling the system using the Monte Carlo code GATE. Six different pixel sizes from 0.85 mm to 1.6 mm, two hole shapes, hexagonal and square, and two different collimator materials, lead and tungsten were considered. It was demonstrated that the camera achieved higher count rates, and better signal-to-noise ratio when equipped with square hole, and large pixels (> 1.3 mm). In these configurations, the spatial resolution was worse than using small pixel sizes (< 1.3 mm), but remained under 3.6 mm in all cases.

  17. Extracts from the 1995/96 European intercomparison of in vivo monitoring systems - a means of comparing the performance of Nal detectors with Ge detectors?

    Energy Technology Data Exchange (ETDEWEB)

    Hunt, E.L.; Thieme, M.; Koenig, K.; Schmitt-Hannig, A.; Goedde, R.; Ruehm, W. [Bundesamt fuer Strahlenschutz, Oberschleissheim (Germany). Inst. fuer Strahlenhygiene

    1997-12-01

    Between August 1995 and July 1996 a Europeanwide intercomparison of 44 whole body counters took place with a number of 42 participating institutions from 19 European countries. A tissue-equivalent whole body phantom containing the radionuclides potassium-40, cobalt-57, cobalt-60 and caesium-137 with activities between 1 to 4 kBq was transported by a representative of the Bundesamt fuer Strahlenschutz (German Federal Office of Radiation Protection) to each of the participating laboratories. The phantom was there treated like a human subject during routine measurement and the participants were asked to identify the incorporated radionuclides and quantify their respective activities. The paper describes the measurement programme and the phantom used. The results are discussed with respect to detector type. (orig.)

  18. Surface Alpha Interactions in P-Type Point-Contact HPGe Detectors: Maximizing Sensitivity of 76Ge Neutrinoless Double-Beta Decay Searches

    Science.gov (United States)

    Gruszko, Julieta

    Though the existence of neutrino oscillations proves that neutrinos must have non-zero mass, Beyond-the-Standard-Model physics is needed to explain the origins of that mass. One intriguing possibility is that neutrinos are Majorana particles, i.e., they are their own anti-particles. Such a mechanism could naturally explain the observed smallness of the neutrino masses, and would have consequences that go far beyond neutrino physics, with implications for Grand Unification and leptogenesis. If neutrinos are Majorana particles, they could undergo neutrinoless double-beta decay (0nBB), a hypothesized rare decay in which two antineutrinos annihilate one another. This process, if it exists, would be exceedingly rare, with a half-life over 1E25 years. Therefore, searching for it requires experiments with extremely low background rates. One promising technique in the search for 0nBB is the use of P-type point-contact (P-PC) high-purity Germanium (HPGe) detectors enriched in 76Ge, operated in large low-background arrays. This approach is used, with some key differences, by the MAJORANA and GERDA Collaborations. A problematic background in such large granular detector arrays is posed by alpha particles incident on the surfaces of the detectors, often caused by 222Rn contamination of parts or of the detectors themselves. In the MAJORANA DEMONSTRATOR, events have been observed that are consistent with energy-degraded alphas originating near the passivated surface of the detectors, leading to a potential background contribution in the region-of-interest for neutrinoless double-beta decay. However, it is also observed that when energy deposition occurs very close to the passivated surface, high charge trapping occurs along with subsequent slow charge re-release. This leads to both a reduced prompt signal and a measurable change in slope of the tail of a recorded pulse. Here we discuss the characteristics of these events and the development of a filter that can identify the

  19. Problems related to the use of annihilation radiation for precision energy calibration of Ge(Li) detectors

    International Nuclear Information System (INIS)

    Fransson, K.; Nilsson, A.; Raedt, J. de; Rensfelt, K.G.

    1976-03-01

    The energy of positron annihilation radiation emanating from several materials was measured, using recently established energies of the 198 Au and 192 Ir γ-rays for calibration. Corrections for the binding energy of positrons and electrons were applied. A peak fitting routine was used which took into account both the background step under the peak, and the possibility that only a part of the detector contains charge-carrier traps. The electron rest mass energy (corrected for binding energies) could be reproduced to within +- 10 eV, in some well-behaved metals even to within +- 5 eV. (Auth.)

  20. Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure

    International Nuclear Information System (INIS)

    Yuan, C L; Lee, P S

    2008-01-01

    A Ge/GeO 2 core/shell nanostructure embedded in an Al 2 O 3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO 2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO 2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering

  1. Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

    Science.gov (United States)

    Yuan, C L; Lee, P S

    2008-09-03

    A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

  2. Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

    International Nuclear Information System (INIS)

    James, Ralph

    2010-01-01

    With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

  3. Detector applications

    International Nuclear Information System (INIS)

    Pehl, R.H.

    1977-10-01

    Semiconductor detectors are now applied to a very wide range of problems. The combination of relatively low cost, excellent energy resolution, and simultaneous broad energy-spectrum analysis is uniquely suited to many applications in both basic and applied physics. Alternative techniques, such as magnetic spectrometers for charged-particle spectroscopy, while offering better energy resolution, are bulky, expensive, and usually far more difficult to use. Furthermore, they do not directly provide the broad energy-spectrum measurements easily accomplished using semiconductor detectors. Scintillation detectors, which are approximately equivalent to semiconductor detectors in convenience and cost, exhibit 10 to 100 times worse energy resolution. However, their high efficiency and large potential size recommend their use in some measurements

  4. Design and performance of the ABCD3TA ASIC for readout of silicon strip detectors in the ATLAS semiconductor tracker

    Czech Academy of Sciences Publication Activity Database

    Campabadal, F.; Fleta, C.; Key, M.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

    2005-01-01

    Roč. 552, - (2005), s. 292-328 ISSN 0168-9002 R&D Projects: GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : front-end electronics * binary readout * silicon strip detectors * application specific integrated circuits * quality assurance Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

  5. A comparison between the response of compound semiconductor detectors in single and back-to-back configuration

    International Nuclear Information System (INIS)

    Auricchio, N.; Donati, A.; Dusi, W.; Perillo, E.; Siffert, P.

    2004-01-01

    CdTe detectors (3 x 5 mm 2 electrode area and 1 mm thick), mounted in a back-to-back configuration with common anode, have been characterized, aiming at determining the actual regions of these devices giving the best and almost constant spectroscopic performance. This configuration ensures that the maximum paths of the charge carriers correspond to the inter-electrode distances and consequently the spectroscopic performance is essentially the same as for the single coupled detectors, but allows one: - to double the useful absorbing thickness when irradiated in the classical planar parallel field geometry; - to double the pixel area when irradiated in the planar transverse field (PTF) geometry, while the absorbing thickness can be freely adjusted according to the experimental requirements. The tests were performed in PTF geometry by using well collimated photon beams (10-300 keV energy range) obtained by a 20 mm thick tungsten collimator having a 0.1 x 1 or a 0.3 x 1 mm 2 collimating channel. Experimental results concerning the spectroscopic behaviour of the coupled detectors have been compared with those obtained by single devices having the same thickness as the single components or the same total thickness as the coupled device. The results show that the back-to-back configuration does not introduce further significant noise with respect to 1 mm thick single detectors and their spectroscopic performance is similar or better than the one shown by 2 mm thick single devices for fine and wide collimator measurements, and mostly in the uncollimated case

  6. LHC1: a semiconductor pixel detector readout chip with internal, tunable delay providing a binary pattern of selected events

    International Nuclear Information System (INIS)

    Heijne, E.H.M.; Antinori, F.; Barberis, D.

    1996-01-01

    The Omega3/LHC1 pixel detector readout chip comprises a matrix of 128 x 16 readout cells of 50 μm x 500 μm and peripheral functions with 4 distinct modes of initialization and operation, together more than 800 000 transistors. Each cell contains a complete chain of amplifier, discriminator with adjustable threshold and fast-OR output, a globally adjustable delay with local fine-tuning, coincidence logic and memory. Every cell can be individually addressed for electrical test and masking. First results have been obtained from electrical tests of a chip without detector as well as from source measurements. The electronic noise without detector is ∼100 e - rms. The lowest threshold setting is close to 2000 e - and non-uniformity has been measured to be better than 450 e - rms at 5000 e - threshold. A timewalk of <10 ns and a precision of <6 ns rms on a delay of 2 μs have been measured. The results may be improved by further optimization. (orig.)

  7. The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

    Directory of Open Access Journals (Sweden)

    Haoyang Cui

    2013-01-01

    Full Text Available The transient photovoltaic (PV characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

  8. In vivo dosimetry with semiconductor and thermoluminescent detectors applied to head and neck cancer treatment; Dosimetria in vivo com uso de detectores semicondutores e termoluminescentes aplicada ao tratamento de cancer de cabeca e pescoco

    Energy Technology Data Exchange (ETDEWEB)

    Viegas, Claudio Castelo Branco

    2003-03-15

    In vivo dosimetry in radiotherapy, i. e, the assessment of the doses received by patients during their treatments, permits a verification of the therapy quality. A routine of in vivo dosimetry is, undoubtedly, a direct benefit for the patient. Unfortunately, in Brazil and in Latin America this procedure is still a privilege for only a few patients. This routine is of common application only in developed countries. The aim of this work is to show the viability and implementation of a routine in vivo dosimetry, using diodes semiconductors and thermoluminescent dosimeters (TLD), at the radiotherapy section of the National Institute of Cancer in Brazil, in the case of head and neck cancer treatment. In order to reach that aim, the characteristics of the response of diodes ISORAD-p and LiF:Mg;Ti (TLD-100) thermoluminescent detectors in powder form were determined. The performance of those detectors for in vivo dosimetry was tested using an RANDO Alderson anthropomorfic phantom and, once their adequacy proved for the kind of measurements proposed, they were used for dose assessment in the case of tumour treatments in the head and neck regions, for Cobalt-60 irradiations. (author)

  9. Effect of SiO{sub 2} coating in bolometric Ge light detectors for rare event searches

    Energy Technology Data Exchange (ETDEWEB)

    Beeman, J.W. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gentils, A. [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Giuliani, A., E-mail: andrea.giuliani@csnsm.in2p3.fr [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Mancuso, M. [Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Pessina, G. [Università di Milano-Bicocca, Dipartimento di Fisica, and INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Plantevin, O. [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Rusconi, C. [Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy)

    2013-05-01

    In germanium-based light detectors for scintillating bolometers, a SiO{sub 2} anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope {sup 82}Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO{sub 2} coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

  10. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    International Nuclear Information System (INIS)

    Cesareo, Roberto; Ettore Gigante, Giovanni; Castellano, Alfredo

    1999-01-01

    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd 1-x Zn x Te and HgI 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 μm, an area of about 2x3 mm 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 μm. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching ∼9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd 1-x Zn x Te detector has an area of 4 mm 2 and a thickness of 3 mm. It has an energy resolution of about 300 eV at 5.9 keV, and an efficiency of 100% over the whole range of X-rays. Finally the HgI 2 detector has an efficiency of about 100% in the whole range of X-rays, and an energy resolution of about 200 eV at 5.9 keV. Coupled to a small 50-60 kV, 1 mA, W-anode X-ray tube, portable systems can be constructed, for the analysis of practically all elements. These systems were applied to analysis in the field of archaeometry and in all applications for which portable systems are needed or at least useful (for example X-ray transmission measurements, X-ray microtomography and so on). Results of in-field use of these detectors and a comparison among these room temperature detectors in relation to concrete applications are presented. More specifically, concerning EDXRF analysis, ancient gold samples were analysed in Rome, in Mexico City and in Milan, ancient bronzes in Sassari, in Bologna, in Chieti and in Naples, and sulfur (due to

  11. Germanium junction detectors. Theoretical and practical factors governing their use in radiation spectrometry

    International Nuclear Information System (INIS)

    Hors, M.; Philis, C.

    1967-01-01

    Semi-conductor detectors have recently greatly increased the possibilities available to nuclear spectroscopists for the study of α, β and γ radiations. Their use in radio-chemistry has encouraged us to study their principle, their mechanism and also the conditions under which they can be used. The first part, which is theoretical, consists of a summary of what should be known concerning the best use of junction detectors, in particular Ge (Li) detectors. The second part, which is experimental, summarizes the laboratory work carried out over a period of one year on Ge (Li) detectors. Stress is laid on the possibilities presented by the use of these detectors as photo-electric spectrometers, and also on the precautions required. Amongst the numerous results presented, the resolution of 2.52 keV obtained for the γ radiation of 145.5 keV for 141 Ce may be particularly noted. (authors) [fr

  12. Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

    Science.gov (United States)

    Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

    2017-01-18

    Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

  13. Optimization of the pion beam for the HADES detector and determination of the η form factor in proton-proton reactions at 2.2 GeV

    International Nuclear Information System (INIS)

    Spruck, Bjoern

    2008-01-01

    This thesis contains two tasks. The first part focuses on the development and optimization of the pion beam facility for the HADES experiment. The second part describes the measurement of the electromagnetic transition form factor of the η meson in proton-proton reactions. To investigate pion-nucleon reaction, a secondary pion beam is required. The pions are produced by a heavy ion beam impinging on a beryllium target. In order to determine the profile of the beam focus, two scintillating fiber detectors have been built as part of this thesis and are read out with recently developed electronics. The measured size of the beam focus appeared to be not acceptable, which can be attributed to the achromatic magnetic focusing in the beam line. Simulations have shown, that an additional quadrupole magnet directly in front of HADES would solve this problem and improve the beam quality. A test experiment including this new quadrupole has been performed and the analysis is still in progress. Preliminary results show a significant reduction of the momentum dependency of the focus. The size of the actual beam spot has been deduced to 14 mm by using an indirect tracking approach. For deducing the electromagnetic structure of hadrons, a first step has been done by analyzing the η Dalitz decay in p+p reactions at 2.2 GeV kinetic energy to determine the electromagnetic transition form factor of the η meson. A fit to the data leads to a form factor slope of b=2.2 -1.4 +1.2 GeV -2 . This corresponds to a pole mass of λ=680 -130 +460 MeV/c 2 . It has been shown, that a semi-exclusive analysis of the η Dalitz decay within the event hypothesis framework including a kinematical fit is feasible. (orig.)

  14. Uranium isotopic analysis of depleted uranium in presence of other radioactive materials by using nondestructive gamma-ray measurements in coaxial and planar Ge detectors

    International Nuclear Information System (INIS)

    Yucel, H.; Yeltepe, E.; Dikmen, H.; Turhan, Sh.; Vural, M.

    2006-01-01

    Full text: The isotopic abundance of depleted uranium samples in the presence of other radioactive materials, especially actinide isotopes such as Th 232, Np 237-Pa 233 and Am 241 can be determined from two gamma-ray spectrometric methods. One is the absolute method which employs non-destructive gamma-ray spectrometry for energies below 1001 keV using a coaxial Ge detector calibrated with a set of standards. The other is the multi-group analysis (MGA) method using the low energy region (< 300 keV) with a planar Ge detector intrinsically calibrated with gamma and X-rays of uranium without use of standards. At present absolute method, less intense but cleaner gamma peaks at 163.33 keV (5.08 percent) and 205 keV(5.01 percent) of U 235 are preferred over more intense peaks at 143.76 keV(10.76 percent), possible interference with 143.25 keV(0.44 percent) of Np 237 and 185.705 keV(57.2 percent), possible interference with 186.21 keV(3.51 percent) of Ra 226. In the high energy region the 1001.03 keV(0.837 percent) peak of Pa 234 m is used for the isotopic abundance analysis because the more intense 63.3 keV peak of Th 234 daughter of U 238 parent has a fully multiplet(62.86 keV+63.29 keV) and include the interferences of the 62.70 keV(1.5 percent) peak of Pa 234, the 63.81 keV(0.263 percent) peak of Th 232 and the 63.90 keV(0.011 percent) peak of Np 237. Although the MGA method is quicker and more practical, the more laborious absolute gamma spectrometric method can give more accurate results for the isotopic determination of depleted uranium samples. The relative uranium abundances obtained with the second method (i,e., MGA) are in general inconsistent with the declared values for the uranium samples in the presence of the above mentioned actinides. The reason for these erroneous results is proposed to be the interference of the gamma and X-rays of uranium in the 80-130 keV region used in MGA with those emissions from other radioactive materials present

  15. Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV

    Science.gov (United States)

    Soti, G.; Wauters, F.; Breitenfeldt, M.; Finlay, P.; Kraev, I. S.; Knecht, A.; Porobić, T.; Zákoucký, D.; Severijns, N.

    2013-11-01

    Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to β particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.

  16. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  17. SAMPO, A Fortran IV Program for Computer Analysis of Gamma Spectrafrom Ge(Li) Detectors, and for Other Spectra with Peaks

    Energy Technology Data Exchange (ETDEWEB)

    Routti, Jorma T.

    1969-10-20

    SAMPO is a Fortran IV program written to perform the data- reduction analysis described by J. T. Routti and S. G. Prussin in Photopeak Method for the Computer Analysis of Gamma-Ray Spectra from Semiconductor Detectors, Nuclear Instruments and Methods 72, 125-142 (1969). The code has also been used to analyze other spectra with peaks and continua. Program SAMPO can be used for an automatic off-line or an interactive on-line analysis. It includes algorithms for line-shape, energy, and efficiency calibrations, and peak-search and peak-fitting routines. Different options are available to make the code applicable to accurate nuclear spectroscopic work as well as to routine data reduction. The mathematical methods and their coding are briefly described. Instructions for using the program and for preparing input data are given and the optimal strategies for running the code are discussed. Instructions are given for using the LRL program library version of SAMPO and for obtaining source decks.

  18. Double Beta Decay with Ge-detectors - and the future of Double Beta and Dark Matter Search (GENIUS)

    International Nuclear Information System (INIS)

    Klapdor-Kleingrothaus, H.V.

    1999-01-01

    Nuclear double beta decay provides an extraordinarily broad potential to search for beyond Standard Model physics, probing already now the TeV scale, on which new physics should manifest itself. These possibilities are reviewed here. First, the results of present generation experiments are presented. The most sensitive one of them - the Heidelberg-Moscow experiment in the Gran Sasso, using enriched 76 Ge - probes the electron neutrino mass now in the sub eV region and will reach a limit of ∼ 0.1 eV in a few years. Basing to a large extent on the theoretical work of the Heidelberg Double Beta Group in the last two years, results are obtained also for SUSY models (R-parity breaking, sneutrino mass), leptoquarks (leptoquark-Higgs coupling), compositeness, right-handed W boson mass and others. These results are comfortably competitive to corresponding results from high-energy accelerators like TEVATRON, HERA, etc. Second, future perspectives of ββ research are discussed. A new Heidelberg experimental proposal (GENIUS) is presented which would allow to increase the sensitivity for Majorana neutrino masses from the present level of at best 0.1 eV down to 0.01 or even 0.001 eV. Its physical potential would be a breakthrough into the multi-TeV range for many beyond standard models. Its sensitivity for neutrino oscillation parameters would be larger than of all present terrestrial neutrino oscillation experiments and of those planned for the future. It would further, already in a first step, cover almost the full MSSM parameter space for prediction of neutralinos as cold dark matter, making the experiment competitive to LHC in the search for supersymmetry

  19. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  20. Measurement of underlying event characteristics using charged particles in $pp$ collisions at $\\sqrt{s}$ = 900 GeV and 7 TeV with the ATLAS Detector

    CERN Document Server

    Aad, Georges; Abdallah, Jalal; Abdelalim, Ahmed Ali; Abdesselam, Abdelouahab; Abdinov, Ovsat; Abi, Babak; Abolins, Maris; Abramowicz, Halina; Abreu, Henso; Acerbi, Emilio; Acharya, Bobby Samir; Ackers, Mario; Adams, David; Addy, Tetteh; Adelman, Jahred; Aderholz, Michael; Adomeit, Stefanie; Adragna, Paolo; Adye, Tim; Aefsky, Scott; Aguilar-Saavedra, Juan Antonio; Aharrouche, Mohamed; Ahlen, Steven; Ahles, Florian; Ahmad, Ashfaq; Ahmed, Hossain; Ahsan, Mahsana; Aielli, Giulio; Akdogan, Taylan; Åkesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alam, Mohammad; Alam, Muhammad Aftab; Albrand, Solveig; Aleksa, Martin; Aleksandrov, Igor; Aleppo, Mario; Alessandria, Franco; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Aliev, Malik; Alimonti, Gianluca; Alison, John; Aliyev, Magsud; Allport, Phillip; Allwood-Spiers, Sarah; Almond, John; Aloisio, Alberto; Alon, Raz; Alonso, Alejandro; Alonso, Jose; Alviggi, Mariagrazia; Amako, Katsuya; Amaral, Pedro; Amelung, Christoph; Ammosov, Vladimir; Amorim, Antonio; Amorós, Gabriel; Amram, Nir; Anastopoulos, Christos; Andeen, Timothy; Anders, Christoph Falk; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Andrieux, Marie-Laure; Anduaga, Xabier; Angerami, Aaron; Anghinolfi, Francis; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonelli, Stefano; Antos, Jaroslav; Antunovic, Bijana; Anulli, Fabio; Aoun, Sahar; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Arce, Ayana; Archambault, John-Paul; Arfaoui, Samir; Arguin, Jean-Francois; Argyropoulos, Theodoros; Arik, Engin; Arik, Metin; Armbruster, Aaron James; Arms, Kregg; Armstrong, Stephen Randolph; Arnaez, Olivier; Arnault, Christian; Artamonov, Andrei; Arutinov, David; Asai, Shoji; Silva, José; Asfandiyarov, Ruslan; Ask, Stefan; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astbury, Alan; Astvatsatourov, Anatoli; Atoian, Grigor; Aubert, Bernard; Auerbach, Benjamin; Auge, Etienne; Augsten, Kamil; Aurousseau, Mathieu; Austin, Nicholas; Avramidou, Rachel Maria; Axen, David; Ay, Cano; Azuelos, Georges; Azuma, Yuya; Baak, Max; Baccaglioni, Giuseppe; Bacci, Cesare; Bach, Andre; Bachacou, Henri; Bachas, Konstantinos; Bachy, Gerard; Backes, Moritz; Badescu, Elisabeta; Bagnaia, Paolo; Bai, Yu; Bailey, David; Bain, Travis; Baines, John; Baker, Oliver Keith; Baker, Sarah; Baltasar Dos Santos Pedrosa, Fernando; Banas, Elzbieta; Banerjee, Piyali; Banerjee, Swagato; Banfi, Danilo; Bangert, Andrea Michelle; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barashkou, Andrei; Barbaro Galtieri, Angela; Barber, Tom; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Bardin, Dmitri; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Baroncelli, Antonio; Barr, Alan; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Barrillon, Pierre; Bartoldus, Rainer; Barton, Adam Edward; Bartsch, Detlef; Bates, Richard; Batkova, Lucia; Batley, Richard; Battaglia, Andreas; Battistin, Michele; Battistoni, Giuseppe; Bauer, Florian; Bawa, Harinder Singh; Beare, Brian; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Beckingham, Matthew; Becks, Karl-Heinz; Beddall, Andrew; Beddall, Ayda; Bednyakov, Vadim; Bee, Christopher; Begel, Michael; Behar Harpaz, Silvia; Behera, Prafulla; Beimforde, Michael; Belanger-Champagne, Camille; Belhorma, Bouchra; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellina, Francesco; Bellomo, Giovanni; Bellomo, Massimiliano; Belloni, Alberto; Belotskiy, Konstantin; Beltramello, Olga; Ben Ami, Sagi; Benary, Odette; Benchekroun, Driss; Benchouk, Chafik; Bendel, Markus; Benedict, Brian Hugues; Benekos, Nektarios; Benhammou, Yan; Benjamin, Douglas; Benoit, Mathieu; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Berglund, Elina; Beringer, Jürg; Bernardet, Karim; Bernat, Pauline; Bernhard, Ralf; Bernius, Catrin; Berry, Tracey; Bertin, Antonio; Bertinelli, Francesco; Bertolucci, Federico; Besana, Maria Ilaria; Besson, Nathalie; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianco, Michele; Biebel, Otmar; Biesiada, Jed; Biglietti, Michela; Bilokon, Halina; Bindi, Marcello; Bingul, Ahmet; Bini, Cesare; Biscarat, Catherine; Bischof, Reinhard; Bitenc, Urban; Black, Kevin; Blair, Robert; Blanchard, Jean-Baptiste; Blanchot, Georges; Blocker, Craig; Blocki, Jacek; Blondel, Alain; Blum, Walter; Blumenschein, Ulrike; Boaretto, Christian; Bobbink, Gerjan; Bobrovnikov, Victor; Bocci, Andrea; Bock, Rudolf; Boddy, Christopher Richard; Boehler, Michael; Boek, Jennifer; Boelaert, Nele; Böser, Sebastian; Bogaerts, Joannes Andreas; Bogdanchikov, Alexander; Bogouch, Andrei; Bohm, Christian; Boisvert, Veronique; Bold, Tomasz; Boldea, Venera; Boonekamp, Maarten; Boorman, Gary; Booth, Chris; Booth, Peter; Booth, Richard; Bordoni, Stefania; Borer, Claudia; Borisov, Anatoly; Borissov, Guennadi; Borjanovic, Iris; Borroni, Sara; Bos, Kors; Boscherini, Davide; Bosman, Martine; Boterenbrood, Hendrik; Botterill, David; Bouchami, Jihene; Boudreau, Joseph; Bouhova-Thacker, Evelina Vassileva; Boulahouache, Chaouki; Bourdarios, Claire; Bousson, Nicolas; Boveia, Antonio; Boyd, James; Boyko, Igor; Bozhko, Nikolay; Bozovic-Jelisavcic, Ivanka; Braccini, Saverio; Bracinik, Juraj; Braem, André; Brambilla, Elena; Branchini, Paolo; Brandenburg, George; Brandt, Andrew; Brandt, Gerhard; Brandt, Oleg; Bratzler, Uwe; Brau, Benjamin; Brau, James; Braun, Helmut; Brelier, Bertrand; Bremer, Johan; Brenner, Richard; Bressler, Shikma; Breton, Dominique; Brett, Nicolas; Bright-Thomas, Paul; Britton, Dave; Brochu, Frederic; Brock, Ian; Brock, Raymond; Brodbeck, Timothy; Brodet, Eyal; Broggi, Francesco; Bromberg, Carl; Brooijmans, Gustaaf; Brooks, William; Brown, Gareth; Brubaker, Erik; Bruckman de Renstrom, Pawel; Bruncko, Dusan; Bruneliere, Renaud; Brunet, Sylvie; Bruni, Alessia; Bruni, Graziano; Bruschi, Marco; Buanes, Trygve; Bucci, Francesca; Buchanan, James; Buchanan, Norman; Buchholz, Peter; Buckingham, Ryan; Buckley, Andrew; Buda, Stelian Ioan; Budagov, Ioulian; Budick, Burton; Büscher, Volker; Bugge, Lars; Buira-Clark, Daniel; Buis, Ernst-Jan; Bulekov, Oleg; Bunse, Moritz; Buran, Torleiv; Burckhart, Helfried; Burdin, Sergey; Burgess, Thomas; Burke, Stephen; Busato, Emmanuel; Bussey, Peter; Buszello, Claus-Peter; Butin, François; Butler, Bart; Butler, John; Buttar, Craig; Butterworth, Jonathan; Buttinger, William; Byatt, Tom; Cabrera Urbán, Susana; Caccia, Massimo; Caforio, Davide; Cakir, Orhan; Calafiura, Paolo; Calderini, Giovanni; Calfayan, Philippe; Calkins, Robert; Caloba, Luiz; Caloi, Rita; Calvet, David; Calvet, Samuel; Camard, Arnaud; Camarri, Paolo; Cambiaghi, Mario; Cameron, David; Cammin, Jochen; Campana, Simone; Campanelli, Mario; Canale, Vincenzo; Canelli, Florencia; Canepa, Anadi; Cantero, Josu; Capasso, Luciano; Capeans Garrido, Maria Del Mar; Caprini, Irinel; Caprini, Mihai; Caprio, Mario; Capriotti, Daniele; Capua, Marcella; Caputo, Regina; Caramarcu, Costin; Cardarelli, Roberto; Carli, Tancredi; Carlino, Gianpaolo; Carminati, Leonardo; Caron, Bryan; Caron, Sascha; Carpentieri, Carmen; Carrillo Montoya, German D; Carron Montero, Sebastian; Carter, Antony; Carter, Janet; Carvalho, João; Casadei, Diego; Casado, Maria P