Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

Science.gov (United States)

Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

2017-10-30

We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

Dimorphism in La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}? How exploratory syntheses led to surprising new finds in the La-Ge and Ce-Ge binary phase diagrams

Energy Technology Data Exchange (ETDEWEB)

Suen, Nian-Tzu; Bobev, Svilen [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE (United States)

2014-04-15

Reported are the synthesis, the crystal structures, and the electronic structures of two new tetragonal phases, La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}. Both title compounds crystallize in the Pu{sub 5}Rh{sub 3} (P4/ncc) structure type, which has close structural relationship with the W{sub 5}Si{sub 3} (I4/mcm) structure type. The synthetic results, supported by thermal analysis suggest that this tetragonal phase is only stable at relatively low temperature and it transforms to the hexagonal form (Mn{sub 5}Si{sub 3} structure type, P6{sub 3}/mcm) at above 850 C. The structural relationship between La{sub 5}Ge{sub 3} (Pu{sub 5}Rh{sub 3} type) and La{sub 5}Sn{sub 3} (W{sub 5}Si{sub 3} type) is discussed as well. Temperature dependent DC magnetization and resistivity measurements indicate that the tetragonal phase La{sub 5}Ge{sub 3} exhibits Pauli-like paramagnetism and is a good metallic conductor. For the tetragonal phase Ce{sub 5}Ge{sub 3}, the magnetic behavior obeys the Curie-Weiss law in the high-temperature regime, while it deviates from the Curie-Weiss law at low temperature. No long-range magnetic ordering was observed down to 5 K, although short-range correlations can be inferred below ca. 50 K. The resistivity measurements of Ce{sub 5}Ge{sub 3} also show metallic-like temperature dependence, although the low-temperature behavior resembling a T{sup 2} law could signify anomalous electron-scattering (e.g., Kondo-like effect). The electronic structures of multiple phases with the same nominal compositions, computed by the TB-LMTO-ASA method, are compared and discussed. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

International Nuclear Information System (INIS)

Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

2014-01-01

Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3

GRETEL, Ge(Li) Gamma Spectra Unfolding

International Nuclear Information System (INIS)

1975-01-01

1 - Nature of physical problem solved: The program performs the quantitative analysis of gamma-ray spectra obtained by Ge(Li) detectors, using special libraries which are prepared for each particular problem. 2 - Method of solution: The computer routines which detect and evaluate peak areas perform the following operations: - local smoothing of the spectrum; - first derivative of the smoothed spectrum, - peak location according to the change of sign of the first derivative; - computation of the net area of each peak found

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

Science.gov (United States)

Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

2018-05-01

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

Ge/SiGe superlattices for nanostructured thermoelectric modules

International Nuclear Information System (INIS)

Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

2013-01-01

Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

Isomeric rations study for the α + 70 Ge

International Nuclear Information System (INIS)

Hora Villano, M.H. da.

1984-12-01

Isomeric ratios for 73 Se F,I produced in the reaction α + 70 Ge with incidence laboratory energy ranging from 8 to 28 MeV, have been measured using off-line γ-ray spectroscopy. Relative formation cross-section for isomeric and ground states were obtained with NAT Ge targets. Compound nucleus statistical analyses were performed using computer codes Alice and Julian. Unlike to Alice code, the Julian code predictions agreed quite well with the experimental results. This agreement may be explained by the inclusion of the γ competition in the deexcitation channels of the compound nucleus and by the correct level density calculation of the emission probabilities in the Julian code. Finally angular momentum populations for isomers formations in the reaction 70 Ge(α, n) 73 have been determined. (author)

Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

Science.gov (United States)

Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

2015-01-01

The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

Science.gov (United States)

Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

2017-12-01

Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

International Nuclear Information System (INIS)

Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

2008-01-01

Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

Structure of 78Ge from the 76Ge(t,p)78Ge reaction

International Nuclear Information System (INIS)

Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

1978-01-01

The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell

Oxygen transport and GeO2 stability during thermal oxidation of Ge

Science.gov (United States)

da Silva, S. R. M.; Rolim, G. K.; Soares, G. V.; Baumvol, I. J. R.; Krug, C.; Miotti, L.; Freire, F. L.; da Costa, M. E. H. M.; Radtke, C.

2012-05-01

Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption.

Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe4

International Nuclear Information System (INIS)

Prokofieva, Violetta K.; Pavlova, Lydia M.

2014-01-01

Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe 4 grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe 4 grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe 4 crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition

Uniaxially stressed Ge:Ga and Ge:Be

Energy Technology Data Exchange (ETDEWEB)

Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

1992-12-01

The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

Energy loss of muons in the energy range 1-10000 GeV

International Nuclear Information System (INIS)

Lohmann, W.; Kopp, R.; Voss, R.

1985-01-01

A summary is given of the most recent formulae for the cross-sections contributing to the energy loss of muons in matter, notably due to electro-magnetic interactions (ionization, bremsstrahlung and electron-pair production) and nuclear interactions. Computed energy losses dE/dx are tabulated for muons with energy between 1 GeV and 10,000 GeV in a number of materials commonly used in high-energy physics experiments. In comparison with earlier tables, these show deviations that grow with energy and amount to several per cent at 200 GeV muon energy. (orig.)

Ge-Au eutectic bonding of Ge (100) single crystals

International Nuclear Information System (INIS)

Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

1993-01-01

The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

Energy levels of germanium, Ge I through Ge XXXII

International Nuclear Information System (INIS)

Sugar, J.; Musgrove, A.

1993-01-01

Atomic energy levels of germanium have been compiled for all stages of ionization for which experimental data are available. No data have yet been published for Ge VIII through Ge XIII and Ge XXXII. Very accurate calculated values are compiled for Ge XXXI and XXXII. Experimental g-factors and leading percentages from calculated eigenvectors of levels are given. A value for the ionization energy, either experimental when available or theoretical, is included for the neutral atom and each ion. section

Magnetic properties of ultrathin Co/Ge(111) and Co/Ge(100) films

International Nuclear Information System (INIS)

Cheng, W. C.; Tsay, J. S.; Yao, Y. D.; Lin, K. C.; Yang, C. S.; Lee, S. F.; Tseng, T. K.; Neih, H. Y.

2001-01-01

The orientation of the magnetization and the occurrence of interfacial ferromagnetic inactive layers for ultrathin Co films grown on Ge(111) and Ge(100) surfaces have been studied using the in situ surface magneto-optic Kerr effect. On a Ge(111) substrate, cobalt films (≤28 monolayers) with in-plane easy axis of magnetization have been observed; however, on a Ge(100) substrate, ultrathin Co films (14 - 16 monolayers) with canted out-of-plane easy axis of magnetization were measured. The ferromagnetic inactive layers were formed due to the intermixing of Co and Ge and lowering the Curie temperature by reducing Co film thickness. The Co - Ge compound inactive layers were 3.8 monolayers thick for Co films grown on Ge(111) and 6.2 monolayers thick for Co films deposited on Ge(100). This is attributed to the difference of the density of surface atoms on Ge(111) and Ge(100). [copyright] 2001 American Institute of Physics

Ab initio treatment of gas phase GeO{sup 2+} doubly charged ion

Energy Technology Data Exchange (ETDEWEB)

Mogren Al Mogren, M. [Chemistry Department, Faculty of Science, King Saud University, PO Box 2455, Riyadh 11451 (Saudi Arabia); Ben Abdallah, D. [Laboratoire de Spectroscopie Atomique, Moléculaire et Applications – LSAMA, Université de Tunis, Tunis (Tunisia); Department of General Studies, Riyadh Corporation of Technology, Technical and Vocational Training Corporation, PO Box 42826, Riyadh 11551 (Saudi Arabia); Hochlaf, M., E-mail: hochlaf@univ-mlv.fr [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, MSME UMR 8208 CNRS, 5 bd Descartes, 77454 Marne-la-Vallée (France)

2015-01-13

Highlights: • Theoretical investigation of the novel gas-phase molecular species GeO{sup 2+}. • Spectroscopic parameters of this dication in its electronic ground and exited states. • Theoretical double ionization spectrum of GeO. - Abstract: Using multi reference configuration interaction methodology in connection with a large basis set, we show that GeO{sup 2+} is a metastable species either in the ground or in the electronically excited states. This confirms the observation of this dication in gas phase by mass spectrometry. In addition, we derived a set of accurate spectroscopic terms for GeO{sup 2+} bound states. At the MRCI/aug-cc-pV5Z level of theory, the adiabatic double ionization energy of GeO is computed to be ∼28.93 eV.

Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6).

Science.gov (United States)

Li, Qian-Shu; Lü, Rui-Hua; Xie, Yaoming; Schaefer, Henry F

2002-12-01

The GeH(n) (n = 0-4) and Ge(2)H(n) (n = 0-6) systems have been studied systematically by five different density functional methods. The basis sets employed are of double-zeta plus polarization quality with additional s- and p-type diffuse functions, labeled DZP++. For each compound plausible energetically low-lying structures were optimized. The methods used have been calibrated against a comprehensive tabulation of experimental electron affinities (Chemical Reviews 102, 231, 2002). The geometries predicted in this work include yet unknown anionic species, such as Ge(2)H(-), Ge(2)H(2)(-), Ge(2)H(3)(-), Ge(2)H(4)(-), and Ge(2)H(5)(-). In general, the BHLYP method predicts the geometries closest to the few available experimental structures. A number of structures rather different from the analogous well-characterized hydrocarbon radicals and anions are predicted. For example, a vinylidene-like GeGeH(2) (-) structure is the global minimum of Ge(2)H(2) (-). For neutral Ge(2)H(4), a methylcarbene-like HGë-GeH(3) is neally degenerate with the trans-bent H(2)Ge=GeH(2) structure. For the Ge(2)H(4) (-) anion, the methylcarbene-like system is the global minimum. The three different neutral-anion energy differences reported in this research are: the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). For this family of molecules the B3LYP method appears to predict the most reliable electron affinities. The adiabatic electron affinities after the ZPVE correction are predicted to be 2.02 (Ge(2)), 2.05 (Ge(2)H), 1.25 (Ge(2)H(2)), 2.09 (Ge(2)H(3)), 1.71 (Ge(2)H(4)), 2.17 (Ge(2)H(5)), and -0.02 (Ge(2)H(6)) eV. We also reported the dissociation energies for the GeH(n) (n = 1-4) and Ge(2)H(n) (n = 1-6) systems, as well as those for their anionic counterparts. Our theoretical predictions provide strong motivation for the further experimental study of these important germanium hydrides. Copyright 2002 Wiley

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Science.gov (United States)

Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

2018-04-01

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

Science.gov (United States)

Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

2016-03-01

Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

GeNN: a code generation framework for accelerated brain simulations

Science.gov (United States)

Yavuz, Esin; Turner, James; Nowotny, Thomas

2016-01-01

Large-scale numerical simulations of detailed brain circuit models are important for identifying hypotheses on brain functions and testing their consistency and plausibility. An ongoing challenge for simulating realistic models is, however, computational speed. In this paper, we present the GeNN (GPU-enhanced Neuronal Networks) framework, which aims to facilitate the use of graphics accelerators for computational models of large-scale neuronal networks to address this challenge. GeNN is an open source library that generates code to accelerate the execution of network simulations on NVIDIA GPUs, through a flexible and extensible interface, which does not require in-depth technical knowledge from the users. We present performance benchmarks showing that 200-fold speedup compared to a single core of a CPU can be achieved for a network of one million conductance based Hodgkin-Huxley neurons but that for other models the speedup can differ. GeNN is available for Linux, Mac OS X and Windows platforms. The source code, user manual, tutorials, Wiki, in-depth example projects and all other related information can be found on the project website http://genn-team.github.io/genn/.

Ge nitride formation in N-doped amorphous Ge2Sb2Te5

International Nuclear Information System (INIS)

Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

2007-01-01

The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

Energy Technology Data Exchange (ETDEWEB)

Xu, L.; Li, Y.; Yu, N. N.; Zhong, Y. P.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2015-01-19

We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.

Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure

International Nuclear Information System (INIS)

Yuan, C L; Lee, P S

2008-01-01

A Ge/GeO 2 core/shell nanostructure embedded in an Al 2 O 3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO 2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO 2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering

Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

Science.gov (United States)

Yuan, C L; Lee, P S

2008-09-03

A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

Directory of Open Access Journals (Sweden)

Hung-Pin Hsu

2013-01-01

Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

OpenAIRE

Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

2017-01-01

Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

SCINFUL-QMD: Monte Carlo based computer code to calculate response function and detection efficiency of a liquid organic scintillator for neutron energies up to 3 GeV

International Nuclear Information System (INIS)

Satoh, Daiki; Sato, Tatsuhiko; Shigyo, Nobuhiro; Ishibashi, Kenji

2006-11-01

The Monte Carlo based computer code SCINFUL-QMD has been developed to evaluate response function and detection efficiency of a liquid organic scintillator for neutrons from 0.1 MeV to 3 GeV. This code is a modified version of SCINFUL that was developed at Oak Ridge National Laboratory in 1988, to provide a calculated full response anticipated for neutron interactions in a scintillator. The upper limit of the applicable energy was extended from 80 MeV to 3 GeV by introducing the quantum molecular dynamics incorporated with the statistical decay model (QMD+SDM) in the high-energy nuclear reaction part. The particles generated in QMD+SDM are neutron, proton, deuteron, triton, 3 He nucleus, alpha particle, and charged pion. Secondary reactions by neutron, proton, and pion inside the scintillator are also taken into account. With the extension of the applicable energy, the database of total cross sections for hydrogen and carbon nuclei were upgraded. This report describes the physical model, computational flow and how to use the code. (author)

Atomistic simulation of the thermal conductivity in amorphous SiO2 matrix/Ge nanocrystal composites

Science.gov (United States)

Kuryliuk, Vasyl V.; Korotchenkov, Oleg A.

2017-04-01

We use nonequilibrium molecular dynamics computer simulations with the Tersoff potential aiming to provide a comprehensive picture of the thermal conductivity of amorphous SiO2 (a-SiO2) matrix with embedded Ge nanocrystals (nc-Ge). The modelling predicts the a-SiO2 matrix thermal conductivity in a temperature range of 50 fair agreement with experiment at around room temperature. It is worth noticing that the predicted room-temperature thermal conductivity in a-SiO2 is in very good agreement with the experimental result, which is in marked contrast with the thermal conductivity calculated employing the widely used van Beest-Kramer-van Santen (BKS) potential. We show that the thermal conductivity of composite nc-Ge/a-SiO2 systems decreases steadily with increasing the volume fraction of Ge inclusions, indicative of enhanced interface scattering of phonons imposed by embedded Ge nanocrystals. We also observe that increasing the volume fractions above a certain threshold value results in a progressively increased thermal conductivity of the nanocomposite, which can be explained by increasing volume fraction of a better thermally conducting Ge. Finally, non-equilibrium molecular dynamics simulations with the Tersoff potential are promising for computing the thermal conductivity of nanocomposites based on amorphous SiO2 and can be readily scaled to more complex composite structures with embedded nanoparticles, which thus help design nanocomposites with desired thermal properties.

Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

International Nuclear Information System (INIS)

Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

2013-01-01

The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

A summary of computational experience at GE Aircraft Engines for complex turbulent flows in gas turbines

Science.gov (United States)

Zerkle, Ronald D.; Prakash, Chander

1995-01-01

This viewgraph presentation summarizes some CFD experience at GE Aircraft Engines for flows in the primary gaspath of a gas turbine engine and in turbine blade cooling passages. It is concluded that application of the standard k-epsilon turbulence model with wall functions is not adequate for accurate CFD simulation of aerodynamic performance and heat transfer in the primary gas path of a gas turbine engine. New models are required in the near-wall region which include more physics than wall functions. The two-layer modeling approach appears attractive because of its computational complexity. In addition, improved CFD simulation of film cooling and turbine blade internal cooling passages will require anisotropic turbulence models. New turbulence models must be practical in order to have a significant impact on the engine design process. A coordinated turbulence modeling effort between NASA centers would be beneficial to the gas turbine industry.

Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

International Nuclear Information System (INIS)

Kutsenok, N.L.; Yanson, T.I.

1987-01-01

X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

Science.gov (United States)

Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

2014-03-01

The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

OpenAIRE

Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau

2013-01-01

We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spec...

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

Science.gov (United States)

Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2018-01-01

Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

International Nuclear Information System (INIS)

Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

1978-01-01

The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape

Preparation of special purity Ge - S - I and Ge - Se - I glasses

Science.gov (United States)

Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Kotereva, T. V.; Snopatin, G. E.; Churbanov, M. F.

2017-05-01

The paper considers the new approaches for the production of special pure Ge - S - I and Ge - Se - I glasses via the germanium(IV) iodide, germanium(II) sulfide, as well as the Ge2S3, Ge2S3I2 and Ge2Se3I2 glassy alloys. The glass samples containing 0.03-0.17 ppm(wt) hydrogen impurity in the form of SH-group, 0.04-0.15 ppm(wt) hydrogen impurity in the form of SeH-group, and 0.5-7.8 ppm(wt) oxygen impurity in the form of Ge-O were produced. Using a crucible technique, the single-index [GeSe4]95I5 glass fibers of 300-400 μm diameter were drawn. The minimum optical losses in the best fiber were 1.7 dB/m at a wavelength of 5.5 μm; the background optical losses were within 2-3 dB/m in the spectral range of 2.5-8 μm.

Strain distribution of confined Ge/GeO2 core/shell nanoparticles engineered by growth environments

Science.gov (United States)

Wei, Wenyan; Yuan, Cailei; Luo, Xingfang; Yu, Ting; Wang, Gongping

2016-02-01

The strain distributions of Ge/GeO2 core/shell nanoparticles confined in different host matrix grown by surface oxidation are investigated. The simulated results by finite element method demonstrated that the strains of the Ge core and the GeO2 shell strongly depend on the growth environments of the nanoparticles. Moreover, it can be found that there is a transformation of the strain on Ge core from tensile to compressive strain during the growth of Ge/GeO2 core/shell nanoparticles. And, the transformation of the strain is closely related with the Young's modulus of surrounding materials of Ge/GeO2 core/shell nanoparticles.

Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

DEFF Research Database (Denmark)

Lu, Weifang; Li, Cheng; Lin, Guangyang

2015-01-01

Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

Calibration of Ge gamma-ray spectrometers for complex sample geometries and matrices

Energy Technology Data Exchange (ETDEWEB)

Semkow, T.M., E-mail: thomas.semkow@health.ny.gov [Wadsworth Center, New York State Department of Health, Empire State Plaza, Albany, NY 12201 (United States); Department of Environmental Health Sciences, School of Public Health, University at Albany, State University of New York, Rensselaer, NY 12144 (United States); Bradt, C.J.; Beach, S.E.; Haines, D.K.; Khan, A.J.; Bari, A.; Torres, M.A.; Marrantino, J.C.; Syed, U.-F. [Wadsworth Center, New York State Department of Health, Empire State Plaza, Albany, NY 12201 (United States); Kitto, M.E. [Wadsworth Center, New York State Department of Health, Empire State Plaza, Albany, NY 12201 (United States); Department of Environmental Health Sciences, School of Public Health, University at Albany, State University of New York, Rensselaer, NY 12144 (United States); Hoffman, T.J. [Wadsworth Center, New York State Department of Health, Empire State Plaza, Albany, NY 12201 (United States); Curtis, P. [Kiltel Systems, Inc., Clyde Hill, WA 98004 (United States)

2015-11-01

A comprehensive study of the efficiency calibration and calibration verification of Ge gamma-ray spectrometers was performed using semi-empirical, computational Monte-Carlo (MC), and transfer methods. The aim of this study was to evaluate the accuracy of the quantification of gamma-emitting radionuclides in complex matrices normally encountered in environmental and food samples. A wide range of gamma energies from 59.5 to 1836.0 keV and geometries from a 10-mL jar to 1.4-L Marinelli beaker were studied on four Ge spectrometers with the relative efficiencies between 102% and 140%. Density and coincidence summing corrections were applied. Innovative techniques were developed for the preparation of artificial complex matrices from materials such as acidified water, polystyrene, ethanol, sugar, and sand, resulting in the densities ranging from 0.3655 to 2.164 g cm{sup −3}. They were spiked with gamma activity traceable to international standards and used for calibration verifications. A quantitative method of tuning MC calculations to experiment was developed based on a multidimensional chi-square paraboloid. - Highlights: • Preparation and spiking of traceable complex matrices in extended geometries. • Calibration of Ge gamma spectrometers for complex matrices. • Verification of gamma calibrations. • Comparison of semi-empirical, computational Monte Carlo, and transfer methods of Ge calibration. • Tuning of Monte Carlo calculations using a multidimensional paraboloid.

Calibration of Ge gamma-ray spectrometers for complex sample geometries and matrices

International Nuclear Information System (INIS)

Semkow, T.M.; Bradt, C.J.; Beach, S.E.; Haines, D.K.; Khan, A.J.; Bari, A.; Torres, M.A.; Marrantino, J.C.; Syed, U.-F.; Kitto, M.E.; Hoffman, T.J.; Curtis, P.

2015-01-01

A comprehensive study of the efficiency calibration and calibration verification of Ge gamma-ray spectrometers was performed using semi-empirical, computational Monte-Carlo (MC), and transfer methods. The aim of this study was to evaluate the accuracy of the quantification of gamma-emitting radionuclides in complex matrices normally encountered in environmental and food samples. A wide range of gamma energies from 59.5 to 1836.0 keV and geometries from a 10-mL jar to 1.4-L Marinelli beaker were studied on four Ge spectrometers with the relative efficiencies between 102% and 140%. Density and coincidence summing corrections were applied. Innovative techniques were developed for the preparation of artificial complex matrices from materials such as acidified water, polystyrene, ethanol, sugar, and sand, resulting in the densities ranging from 0.3655 to 2.164 g cm −3 . They were spiked with gamma activity traceable to international standards and used for calibration verifications. A quantitative method of tuning MC calculations to experiment was developed based on a multidimensional chi-square paraboloid. - Highlights: • Preparation and spiking of traceable complex matrices in extended geometries. • Calibration of Ge gamma spectrometers for complex matrices. • Verification of gamma calibrations. • Comparison of semi-empirical, computational Monte Carlo, and transfer methods of Ge calibration. • Tuning of Monte Carlo calculations using a multidimensional paraboloid

Growth and characterization of isotopically enriched 70Ge and 74Ge single crystals

International Nuclear Information System (INIS)

Itoh, K.

1992-10-01

Isotopically enriched 70 Ge and 74 Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm 3 volume. To our knowledge, we have grown the first 70 Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be ∼2 x cm -3 which is two order of magnitude better that of 74 Ge crystals previously grown by two different groups. Isotopic enrichment of the 70 Ge and the 74 Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed

HPC4Energy Final Report : GE Energy

Energy Technology Data Exchange (ETDEWEB)

Smith, Steven G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Van Zandt, Devin T. [GE Energy Consulting, Schenectady, NY (United States); Thomas, Brian [GE Energy Consulting, Schenectady, NY (United States); Mahmood, Sajjad [GE Energy Consulting, Schenectady, NY (United States); Woodward, Carol S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2014-02-25

Power System planning tools are being used today to simulate systems that are far larger and more complex than just a few years ago. Advances in renewable technologies and more pervasive control technology are driving planning engineers to analyze an increasing number of scenarios and system models with much more detailed network representations. Although the speed of individual CPU’s has increased roughly according to Moore’s Law, the requirements for advanced models, increased system sizes, and larger sensitivities have outstripped CPU performance. This computational dilemma has reached a critical point and the industry needs to develop the technology to accurately model the power system of the future. The hpc4energy incubator program provided a unique opportunity to leverage the HPC resources available to LLNL and the power systems domain expertise of GE Energy to enhance the GE Concorda PSLF software. Well over 500 users worldwide, including all of the major California electric utilities, rely on Concorda PSLF software for their power flow and dynamics. This pilot project demonstrated that the GE Concorda PSLF software can perform contingency analysis in a massively parallel environment to significantly reduce the time to results. An analysis with 4,127 contingencies that would take 24 days on a single core was reduced to 24 minutes when run on 4,217 cores. A secondary goal of this project was to develop and test modeling techniques that will expand the computational capability of PSLF to efficiently deal with systems sizes greater than 150,000 buses. Toward this goal the matrix reordering implementation time was sped up 9.5 times by optimizing the code and introducing threading.

The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

International Nuclear Information System (INIS)

Mahmodi, H.; Hashim, M. R.

2010-01-01

In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

Science.gov (United States)

Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

2012-02-01

High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

Directory of Open Access Journals (Sweden)

Nigel J. Cook

2015-03-01

Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on  zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent

GAUSS VII: a computer program for the analysis of #betta#-ray spectra from Ge semiconductor spectrometers

International Nuclear Information System (INIS)

McCullagh, C.M.; Helmer, R.G.

1982-10-01

A description is given of a computer program, GAUSS VII, which has been written to determine #betta#-ray spectra from Ge semiconductor spectrometers. The preliminary portions of the program can determine the energy and width calibration equations, loacte individual peaks and define peak regions that are significantly above the local spectral background. The user may edit these lists of peaks and regions. Each peak region is fitted with one or more components in which the peaks are represented by a Gaussian function or a Gaussian with one or two additive exponential tails on the low-energy side and one on the high-energy side. A step-like background function can be used with each component. The program will automatically recycle to add one or more components to a region if needed to improve the fit. The #betta#-ray energies and intensities are computed from resulting Gaussian positions and peak areas. To allow the user to determine the best results, the results from the analyses for each region with different numbers of components can be printed and line-printer plots of the fits to the data can be made. The quality of the results depends primarily on the ability of the program to define a good spectral region for each analysis and the ability to recycle to determine the proper number of components

Si, Ge and SiGe wires for sensor application

International Nuclear Information System (INIS)

Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

2011-01-01

Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Science.gov (United States)

Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

2017-11-01

In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Directory of Open Access Journals (Sweden)

Abd Rahim Alhan Farhanah

2017-01-01

Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

Directory of Open Access Journals (Sweden)

Wei-Ting eLai

2016-02-01

Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

Science.gov (United States)

Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

2017-06-01

We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Directory of Open Access Journals (Sweden)

Guangyang Lin

2016-09-01

Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

Partial-wave analyses of hadron scattering below 2 GeV

International Nuclear Information System (INIS)

Arndt, R.A.; Roper, L.D.

1990-01-01

The Center for Analysis of Particle Scattering (CAPS) in the Department of Physics at Virginia Polytechnic Institute and State University has analyzed basic two-body hadron reactions below 2 GeV for the last two decades. Reactions studied were nucleon-nucleon, pion-nucleon, K + -nucleon and pion photoproduction systems. In addition to analyses of these systems, a computer graphics system (SAID) has been developed and disseminated to over 200 research institutions using VAX computers. 8 refs

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

International Nuclear Information System (INIS)

Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

2013-01-01

We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

Science.gov (United States)

Nahali, Masoud; Mehri, Ali

2018-06-01

The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

Water-vapor-enhanced growth of Ge-GeOx core-shell nanowires and Si1-xGexOy nanowires

International Nuclear Information System (INIS)

Hsu, T-J; Ko, C-Y; Lin, W-T

2007-01-01

The effects of moist Ar on the growth of Ge-GeO x core-shell nanowires (Ge-GeO x NWs) and Si 1-x Ge x O y nanowires (SiGeONWs) on Si substrates without adding a metal catalyst via the carbothermal reduction of GeO 2 powders at 1100 deg. C were studied. No significant nanowires were grown in dry Ar at a flow rate of 100-300 sccm until a bit of water in the range of 0.5-2 ml was loaded into the furnace. More water suppressed the growth of nanowires because of the exhaustion of more graphite powder. The growth of Ge-GeO x NWs and SiGeONWs follows the vapor-solid and vapor-liquid-solid processes, respectively. The present study showed that the water vapor serves as an oxidizer as well as a reducer at 1100 deg. C in enhancing the growth of SiGeONWs and Ge-GeO x NWs, respectively. The growth mechanisms of Ge-GeO x NWs and SiGeONWs are also discussed

Thin SiGe virtual substrates for Ge heterostructures integration on silicon

International Nuclear Information System (INIS)

Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

2014-01-01

The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

Science.gov (United States)

Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

2018-01-01

The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

GeNemo: a search engine for web-based functional genomic data.

Science.gov (United States)

Zhang, Yongqing; Cao, Xiaoyi; Zhong, Sheng

2016-07-08

A set of new data types emerged from functional genomic assays, including ChIP-seq, DNase-seq, FAIRE-seq and others. The results are typically stored as genome-wide intensities (WIG/bigWig files) or functional genomic regions (peak/BED files). These data types present new challenges to big data science. Here, we present GeNemo, a web-based search engine for functional genomic data. GeNemo searches user-input data against online functional genomic datasets, including the entire collection of ENCODE and mouse ENCODE datasets. Unlike text-based search engines, GeNemo's searches are based on pattern matching of functional genomic regions. This distinguishes GeNemo from text or DNA sequence searches. The user can input any complete or partial functional genomic dataset, for example, a binding intensity file (bigWig) or a peak file. GeNemo reports any genomic regions, ranging from hundred bases to hundred thousand bases, from any of the online ENCODE datasets that share similar functional (binding, modification, accessibility) patterns. This is enabled by a Markov Chain Monte Carlo-based maximization process, executed on up to 24 parallel computing threads. By clicking on a search result, the user can visually compare her/his data with the found datasets and navigate the identified genomic regions. GeNemo is available at www.genemo.org. © The Author(s) 2016. Published by Oxford University Press on behalf of Nucleic Acids Research.

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

Science.gov (United States)

Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

2012-09-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

International Nuclear Information System (INIS)

Liu, Jifeng; Kimerling, Lionel C; Michel, Jurgen

2012-01-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic–photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500–1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

Luminescence of one dimensional ZnO, GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanostructure through thermal evaporation of Zn and Ge powder mixture

Energy Technology Data Exchange (ETDEWEB)

Pham, Vuong-Hung, E-mail: vuong.phamhung@hust.edu.vn; Kien, Vu Trung; Tam, Phuong Dinh; Huy, Pham Thanh

2016-07-15

Graphical abstract: - Highlights: • ZnO and GeO{sub 2}–ZnGeO{sub 4} nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture. • Morphology of specimens were observed to have a nanowire structure to rod-like morphology. • Strong NBE emission band with suppressed visible green emission band were observed on the dominant ZnO nanowires. • Strong emission of ∼530 nm were observed on the GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires. - Abstract: This paper reports the first attempt for fabrication of thermal evaporated Zn–Ge powder mixture to achieve near-band-edge (NBE) emission of ZnO and visible emission of GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires with controllable intensities. The nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture, particularly, by using different Zn:Ge ratio, temperature and evaporated times. The morphology of nanowires was depended on the Zn and Ge ratio that was observed to have a nanowire structure to rod-like morphology. The thermal evaporation of Zn:Ge powder mixture resulted in formation of dominant ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires as a function of evaporated parameters. These results suggest that the application of thermal evaporation of Zn and Ge mixture for potential application in synthesis of ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires for optoelectronic field.

XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

International Nuclear Information System (INIS)

Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

2005-01-01

Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

International Nuclear Information System (INIS)

Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

2000-01-01

The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

Science.gov (United States)

Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

2017-06-01

Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

Science.gov (United States)

Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

2018-06-01

The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

Science.gov (United States)

2010-08-05

...] GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... of Investment Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The...

Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation

International Nuclear Information System (INIS)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Xiong, Yuhua; Zhang, Jing; Zhao, Chao

2015-01-01

Highlights: • The dominant key to achieve superior Ge passivation by GeO x is investigated. • The interface state density decreases with increasing the GeO x thickness. • The Ge 3+ oxide component is the dominant key to passivate the Ge surface. • The atomic structure at the GeO x /Ge interface is built by XPS. - Abstract: The dominant key to achieve superior Ge surface passivation by GeO x interfacial layer is investigated based on ozone oxidation. The interface state density (D it ) measured from low temperature conduction method is found to decrease with increasing the GeO x thickness (0.26–1.06 nm). The X-ray photoelectron spectroscopy (XPS) is employed to demonstrate the interfacial structure of GeO x /Ge with different GeO x thicknesses. And the XPS results show that Ge 3+ oxide component is responsible to the decrease of the D it due to the effective passivation of Ge dangling bonds. Therefore, the formation of Ge 3+ component is the dominant key to achieve low D it for Ge gate stacks. Our work confirms that the same physical mechanism determines the Ge surface passivation by the GeO x regardless of the oxidation methods to grow the GeO x interfacial layer. As a result, to explore a growth process that can realize sufficient Ge 3+ component in the GeO x interlayer as thin as possible is important to achieve both equivalent oxide thickness scaling and superior interfacial property simultaneously. This conclusion is helpful to engineer the optimization of the Ge gate stacks.

Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

Science.gov (United States)

Lucovsky, Gerald; Zeller, Daniel

2011-09-01

Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

A compilation of K+p --> K0 DELTA++ cross sections below 2 GeV/c

CERN Document Server

Giacomelli, G; Piccinini, M; Rimondi, F; Serra-Lugaresi, P

1976-01-01

Data published up to June 1976 on the quasi-two-body reaction K+p --> K0 DELTA++, with DELTA++ -->ppi+, are compiled for laboratory momenta from 0.7 to 2 GeV/c. They include integrated cross-sections, differencial cross-sections, average and differential density matrix elements, as well as coefficients of the Legendre polynomial expensions of the production differential distributions. The data are presented in the form og graphs and computer-produced tables. The method of computation is the same as in a previous report (CERN-HERA-75-1) on K+N cross-sections below2 GeV/c, to which the reader is referred for details on cards formats, notations, etc.

One-step Ge/Si epitaxial growth.

Science.gov (United States)

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

International Nuclear Information System (INIS)

Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

2014-01-01

We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

Thermal transport property of Ge34 and d-Ge investigated by molecular dynamics and the Slack's equation

International Nuclear Information System (INIS)

Han-Fu, Wang; Wei-Guo, Chu; Yan-Jun, Guo; Hao, Jin

2010-01-01

In this study, we evaluate the values of lattice thermal conductivity κ L of type II Ge clathrate (Ge 34 ) and diamond phase Ge crystal (d-Ge) with the equilibrium molecular dynamics (EMD) method and the Slack's equation. The key parameters of the Slack's equation are derived from the thermodynamic properties obtained from the lattice dynamics (LD) calculations. The empirical Tersoff's potential is used in both EMD and LD simulations. The thermal conductivities of d-Ge calculated by both methods are in accordance with the experimental values. The predictions of the Slack's equation are consistent with the EMD results above 250 K for both Ge 34 and d-Ge. In a temperature range of 200–1000 K, the κ L value of d-Ge is about several times larger than that of Ge 34 . (condensed matter: structure, thermal and mechanical properties)

Partial-wave analyses of hadron scattering below 2 GeV

International Nuclear Information System (INIS)

Arndt, R.A.; Roper, L.D.

1991-01-01

The Center for Analysis of Particle Scattering (CAPS) in the Department of Physics at Virginia Polytechnic Institute and State University has analyzed basic two-body hadron reactions below 2 GeV for the last two decades. Reactions studied were nucleon-nucleon, pion-nucleon, K + -nucleon and pion photoproduction systems. In addition to analyses of these systems, a computer graphics system (SAID) has been developed and disseminated to over 250 research institutions using VAX computers. The computer-interactive system for disseminating information on basic scattering reactions is also accessible to the physics community through TELNET on the VPI ampersand SU physics department VAX. 6 refs

Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

International Nuclear Information System (INIS)

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

2006-01-01

Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

Science.gov (United States)

Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

2017-10-01

The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

Science.gov (United States)

Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

2017-11-29

The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O3 layer

International Nuclear Information System (INIS)

Paleari, S.; Molle, A.; Accetta, F.; Lamperti, A.; Cianci, E.; Fanciulli, M.

2014-01-01

The electrical activity of Ge dangling bonds is investigated at the interface between GeO 2 -passivated Ge(1 1 1) substrate and Al 2 O 3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al 2 O 3 /GeO 2 /Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices ( 10 cm −2 ). In particular, it is shown that capping the GeO 2 -passivated Ge(1 1 1) with Al 2 O 3 has no impact on the microstructure of the Ge dangling bond.

Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation

Energy Technology Data Exchange (ETDEWEB)

Satoh, Yuhki, E-mail: yu-ki@ecei.tohoku.ac.jp; Itoh, Yuhki; Kawashima, Tomoyuki; Washio, Katsuyoshi

2016-03-01

To form Ge dots on a Si substrate, the effect of thermal reaction temperature of sub-monolayer C with Si (100) was investigated and the deposited Ge thickness was optimized. The samples were prepared by solid-source molecular beam epitaxy with an electron-beam gun for C sublimation and a Knudsen cell for Ge evaporation. C of 0.25 ML was deposited on Si (100) at a substrate temperature of 200 °C, followed by a high-temperature treatment at the reaction temperature (T{sub R}) of 650–1000 °C to create Si–C bonds. Ge equivalent to 2 to 5 nm thick was subsequently deposited at 550 °C. Small and dense dots were obtained for T{sub R} = 750 °C but the dot density decreased and the dot diameter varied widely in the case of lower and higher T{sub R}. A dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge deposition equivalent to 3 to 5 nm thick and a standard deviation of dot diameter was the lowest of 10 nm for 5 nm thick Ge. These results mean that C-mediated Ge dot formation was strongly influenced not only by the c(4 × 4) reconstruction condition through the Si–C reaction but also the relationship between the Ge deposition thickness and the exposed Si (100)-(2 × 1) surface area. - Highlights: • The effect of Si–C reaction temperature on Ge dot formation was investigated. • Small and dense dots were obtained for T{sub R} = 750 °C. • The dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge = 3 to 5 nm. • The standard deviation of dot diameter was the lowest of 10 nm at Ge = 5 nm.

Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

Science.gov (United States)

Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

2018-01-01

Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

International Nuclear Information System (INIS)

Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

2015-01-01

While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

The gastroesophageal (GE) scintiscan in detection of GE reflux and pulmonary aspiration in children

International Nuclear Information System (INIS)

Arasu, T.S.; Franken, E.A.; Wyllie, R.; Eigen, H.; Grosfeld, J.L.; Siddiqui, A.R.; Fitzgerald, J.F.

1980-01-01

Gastroesophageal scintiscans and barium examinations were performed on 30 children with documented GE reflux and 13 control patients. After instillation of 2 mCi of Tc99m sulfur colloid into the stomach, serial images of the abdomen and thorax were obtained. The GE scintiscan was positive in 17 of 30 with GE reflux; the barium study was positive in 15 of 30. A positive scintiscan and/or barium study was found in 21 of 30 patients with reflux, and none of the controls. Pulmonay aspiration of gastric contents was not detected by either method. We conclude that the GE scintiscan is complementary to barium studies in the diagnosis of GE reflux, and neither study approaches the accuracy of more sophisticated tests [fr

Prototype sector magnets for the GeV electron microtron (GEM)

International Nuclear Information System (INIS)

Wehrle, R.B.; Norem, J.H.; Praeg, W.F.; Swanstrom, R.H.; Thompson, K.M.

1983-01-01

Three prototypes of the sector magnets for GeV Electon Microtron accelerators have been designed. One has been built and two are being constructed. The first is a full scale, 168 ton prototype for one-half of a 2 GeV Double Sided Microtron (DSM) sector magnet. The successful fabrication and testing of the pole pieces for this prototype has demonstrated that their required close tolerances for flatness and parallelism can be met. The second magnet is an approximate two-thirds scale model of one step at the low energy end of the hexatron sector magnet designed for the 4 GeV Electron Microtron (GEM). The measured fields demonstrate that the field falls off faster than an Enge-short-tail and error fields are at low levels and are controllable. A third prototype magnet exactly duplicates the full scale geometry of the first three full orbits of the GEM sector magnet from entrance to exit points. It will permit high precision measurements and corrections of field errors and verify the 3-D computer program, TOSCA

Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction

Science.gov (United States)

Wang, Hongjuan; Han, Genquan; Jiang, Xiangwei; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

2017-04-01

In this work, the boosting effect on the performance of GeSn n-channel fin tunneling FET (nFinTFET) enabled by uniaxial tensile stress is investigated theoretically. As the fin rotates within the (001) plane, the uniaxial tensile stress is always along its direction. The electrical characteristics of tensile-stressed GeSn nFinTFETs with point and line tunneling modes are computed utilizing the technology computer aided design (TCAD) simulator in which the dynamic nonlocal band-to-band tunneling (BTBT) algorithm is employed. In comparison with the relaxed devices, tensile-stressed GeSn nFinTFETs achieve a substantial enhancement in band-to-band tunneling generation rate (G BTBT) and on-state current I ON owing to the reduced bandgap E G induced by the tensile stress. Performance improvement of GeSn nFinTFETs induced by tensile stress demonstrates a strong dependence on channel direction and tunneling modes. Under the same magnitude of stress, line-nFinTFETs obtain a more pronounced I ON enhancement over the transistors with point tunneling mode.

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

International Nuclear Information System (INIS)

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M.; Sun, X.; Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S.

2011-01-01

We investigated the molecular beam deposition of Al 2 O 3 on Ge 0.95 Sn 0.05 surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge 1-x Sn x and Ge/Ge 1-x Sn x surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al 2 O 3 high-κ gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge 1-x Sn x /Al 2 O 3 gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge 1-x Sn x layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D it ) in the range of 10 12 eV -1 cm -2 in mid gap and higher close to the valence band edge.

Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

Energy Technology Data Exchange (ETDEWEB)

Paul, N.

2007-10-26

In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

International Nuclear Information System (INIS)

Haegel, N.M.

1985-11-01

An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10 8 photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H 2 atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs

Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

Science.gov (United States)

Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

2018-04-01

The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

Crystal structure of LaFe5Ge3O15 = LaFe5[GeO4][Ge2O7]O4

International Nuclear Information System (INIS)

Genkina, E.A.; Maksimov, B.A.; Mill, B.V.

1991-01-01

The authors have determined the structure of a new lanthanum-iron germanate LaFe 5 [GeO 4 ][GeO 4 ][Ge 2 O 7 ]O 4 (a = 18.040(4), b = 17.012(4), c = 7.591(1) angstrom, V = 2330.2(9) angstrom 3 , Z = 8, ρ t = 4.99 g/cm 3 , space ground Cmca, 1976 I hkl ≥ 3 σ(I), R = 4.5%). The compound is interesting because the framework simultaneously contains ortho- and diorthogroups of Ge and because of a classical set of coordination numbers (4,5,6) characteristic of trivalent iron within the composition of one structure. The coordination polyhedron of La has nine vertices

Unexpected Ge-Ge contacts in the two-dimensional Ge{sub 4}Se{sub 3}Te phase and analysis of their chemical cause with the density of energy (DOE) function

Energy Technology Data Exchange (ETDEWEB)

Kuepers, Michael; Konze, Philipp M.; Maintz, Stefan; Steinberg, Simon [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Mio, Antonio M.; Cojocaru-Miredin, Oana; Zhu, Min; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Mueller, Merlin; Mayer, Joachim [Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen University (Germany); Luysberg, Martina [Ernst-Ruska-Center, Forschungszentrum Juelich GmbH (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH Aachen University (Germany)

2017-08-14

A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe{sub 0.75}Te{sub 0.25} has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge{sub 4}Se{sub 3}Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge{sub 4}Se{sub 3}Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

2008-01-01

Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

The oscillation probability of GeV solar neutrinos of all active species

International Nuclear Information System (INIS)

Gouvea, Andre de

2001-01-01

I discuss the oscillation probability of O(GeV) neutrinos of all active flavours produced inside the Sun and detected at the Earth. In the GeV energy regime, matter effects are potentially important both for the ''1-3'' system and the ''1-2'' system. A numerical scan of the multidimensional three-flavour parameter space is presented. One curiosity is that in the three-flavour oscillation case P αβ ≠ P βα for a large portion of the parameter space, even if the MNS matrix is real. Oscillation effects computed here may play a large role in interpreting solar WIMP search data from large neutrino telescopes

New approach to calculate the true-coincidence effect of HpGe detector

Energy Technology Data Exchange (ETDEWEB)

Alnour, I. A., E-mail: aaibrahim3@live.utm.my, E-mail: ibrahim.elnour@yahoo.com [Department of Physics, Faculty of Pure and Applied Science, International University of Africa, 12223 Khartoum (Sudan); Wagiran, H. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai,Johor (Malaysia); Ibrahim, N. [Faculty of Defence Science and Technology, National Defence University of Malaysia, Kem Sungai Besi, 57000 Kuala Lumpur (Malaysia); Hamzah, S.; Elias, M. S. [Malaysia Nuclear Agency (MNA), Bangi, 43000 Kajang, Selangor D.E. (Malaysia); Siong, W. B. [Chemistry Department, Faculty of Resource Science & Technology, Universiti Malaysia Sarawak, 94300 Kota Samarahan, Sarawak (Malaysia)

2016-01-22

The corrections for true-coincidence effects in HpGe detector are important, especially at low source-to-detector distances. This work established an approach to calculate the true-coincidence effects experimentally for HpGe detectors of type Canberra GC3018 and Ortec GEM25-76-XLB-C, which are in operation at neutron activation analysis lab in Malaysian Nuclear Agency (NM). The correction for true-coincidence effects was performed close to detector at distances 2 and 5 cm using {sup 57}Co, {sup 60}Co, {sup 133}Ba and {sup 137}Cs as standard point sources. The correction factors were ranged between 0.93-1.10 at 2 cm and 0.97-1.00 at 5 cm for Canberra HpGe detector; whereas for Ortec HpGe detector ranged between 0.92-1.13 and 0.95-100 at 2 and 5 cm respectively. The change in efficiency calibration curve of the detector at 2 and 5 cm after correction was found to be less than 1%. Moreover, the polynomial parameters functions were simulated through a computer program, MATLAB in order to find an accurate fit to the experimental data points.

Electronic structure of Ge-2 and Ge-2 and thermodynamic properties of Ge-2 from all electron ab initio investigations and Knudsen effusion mass spectroscopic measurements

DEFF Research Database (Denmark)

Shim, Irene; Baba, M. Sai; Gingerich, K.A.

2002-01-01

The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term and for t......The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term...... excited states are presented. Thermal functions based on the theoretically determined molecular parameters were used to derive the thermodynamic properties of the Ge-2 molecule from new mass spectrometric equilibrium data. The literature value for the dissociation energy of Ge-2 has been re...

Multifunctional Binary Monolayers Ge xP y: Tunable Band Gap, Ferromagnetism, and Photocatalyst for Water Splitting.

Science.gov (United States)

Li, Pengfei; Zhang, Wei; Li, Dongdong; Liang, Changhao; Zeng, Xiao Cheng

2018-06-04

The most stable structures of two-dimensional Ge x P y and Ge x As y monolayers with different stoichiometries (e.g., GeP, GeP 2 , and GeP 3 ) are explored systematically through the combination of the particle-swarm optimization technique and density functional theory optimization. For GeP 3 , we show that the newly predicted most stable C2/ m structure is 0.16 eV/atom lower in energy than the state-of-the-art P3̅m1 structure reported previously ( Nano Lett. 2017, 17, 1833). The computed electronic band structures suggest that all the stable and metastable monolayers of Ge x P y are semiconductors with highly tunable band gaps under the biaxial strain, allowing strain engineering of their band gaps within nearly the whole visible-light range. More interestingly, the hole doping can convert the C2/ m GeP 3 monolayer from nonmagnetic to ferromagnetic because of its unique valence band structure. For the GeP 2 monolayer, the predicted most stable Pmc2 1 structure is a (quasi) direct-gap semiconductor that possesses a high electron mobility of ∼800 cm 2 V -1 s -1 along the k a direction, which is much higher than that of MoS 2 (∼200 cm 2 V -1 s -1 ). More importantly, the Pmc2 1 GeP 2 monolayer not only can serve as an n-type channel material in field-effect transistors but also can be an effective catalyst for splitting water.

Single ferromagnetic fluctuations in UCoGe revealed by 73Ge- and 59Co-NMR studies

Science.gov (United States)

Manago, Masahiro; Ishida, Kenji; Aoki, Dai

2018-02-01

73Ge and 59Co nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) measurements have been performed on a 73Ge-enriched single-crystalline sample of the ferromagnetic superconductor UCoGe in the paramagnetic state. The 73Ge NQR parameters deduced from NQR and NMR are close to those of another isostructural ferromagnetic superconductor URhGe. The Knight shifts of the Ge and Co sites are well scaled to each other when the magnetic field is parallel to the b or c axis. The hyperfine coupling constants of Ge are estimated to be close to those of Co. The large difference of spin susceptibilities between the a and b axes could lead to the different response of the superconductivity and ferromagnetism with the field parallel to these directions. The temperature dependence of the nuclear spin-lattice relaxation rates 1 /T1 at the two sites is similar to each other above 5 K. These results indicate that the itinerant U-5 f electrons are responsible for the ferromagnetism in this compound, consistent with previous studies. The similarities and differences in the three ferromagnetic superconductors are discussed.

Room Temperature Ferromagnetic Mn:Ge(001

Directory of Open Access Journals (Sweden)

George Adrian Lungu

2013-12-01

Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

The study on Ge-68 production

International Nuclear Information System (INIS)

Yang, Seung Dae; Kim, Sang Wook; Hur, Min Goo

2009-06-01

The Ge-68 is a correction source of PET and is used in radiopharmaceuticals synthesis. This project is mainly aimed to produce the Ge-68. Based on this project results, the local Ge-68 production can be possible and the revitalization of the radioisotope utilization research areas can be accomplished. The characteristics of the Ge-68 and Ga-68 are obtained and analyzed. The production conditions are also developed, and the domestic and overseas status of the art are considered. The stacked foil target is designed using Al disc and dried Ga 2 O 3 powder, and the irradiation target is also designed. The cross section of the nat. Ga(p,xn) 68 Ge reaction is obtained using the developed target. The separation experiment of cold Ge/Ga in the H 2 SO 4 -HCl solution are carried out as a simulation experiment of the radioactive Ge/Ga sources. The separation of Ge/Ga by liquid extraction of CCl 4 in 8M HCl is also accomplished. And the synthesis experiment of the Hematophorphyrin-Ga complex is performed

Shallow acceptors in Ge/GeSi heterostructures with quantum wells in magnetic field

International Nuclear Information System (INIS)

Aleshkin, V.Ya.; Antonov, A.V.; Veksler, D.B.; Gavrilenko, V.I.; Erofeeva, I.V.; Ikonnikov, A.V.; Kozlov, D.V.; Spirin, K.E.; Kuznetsov, O.A.

2005-01-01

One investigated both theoretically and experimentally into shallow acceptors in Ge/GeSi heterostructures with quantum wells (QW) in a magnetic field. It is shown that alongside with lines of cyclotron resonance in magnetoabsorption spectra one observes transitions from the ground state of acceptor to the excited ones associated with the Landau levels from the first and the second subbands of dimensional quantization, and resonance caused by ionization of A + -centres. To describe impurity transitions in Ge/GeSi heterostructures with QW in a magnetic field and to interpret the experiment results in detail one uses numerical method of calculation based on expansion of wave function of acceptor in terms of basis of wave functions of holes in QW in the absence of magnetic field [ru

Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

International Nuclear Information System (INIS)

Han Le; Zhang Xiong; Wang Sheng-Kai; Xue Bai-Qing; Liu Hong-Gang; Wu Wang-Ran; Zhao Yi

2014-01-01

We propose a modified thermal oxidation method in which an Al 2 O 3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO x interfacial layer, and obtain a superior Al 2 O 3 /GeO x /Ge gate stack. The GeO x interfacial layer is formed in oxidation reaction by oxygen passing through the Al 2 O 3 OBL, in which the Al 2 O 3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO x interfacial layer would dramatically decrease as the thickness of Al 2 O 3 OBL increases, which is beneficial to achieving an ultrathin GeO x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO x interfacial layer has little influence on the passivation effect of the Al 2 O 3 /Ge interface. Ge (100) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) using the Al 2 O 3 /GeO x /Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I on /I off ) ratio of above 1×10 4 , a subthreshold slope of ∼ 120 mV/dec, and a peak hole mobility of 265 cm 2 /V·s are achieved. (condensed matter: structural, mechanical, and thermal properties)

Sn-based Ge/Ge{sub 0.975}Sn{sub 0.025}/Ge p-i-n photodetector operated with back-side illumination

Energy Technology Data Exchange (ETDEWEB)

Chang, C.; Li, H.; Huang, S. H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Sun, G.; Soref, R. A. [Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)

2016-04-11

We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with the use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.

Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

Science.gov (United States)

Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

2018-06-01

The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

Experimental determination of the Ta–Ge phase diagram

Energy Technology Data Exchange (ETDEWEB)

Araújo Pinto da Silva, Antonio Augusto, E-mail: aaaps@ppgem.eel.usp.br [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Coelho, Gilberto Carvalho [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); UniFoa – Centro Universitário de Volta Redonda, Núcleo de Pesquisa, Campus Três Poços, Avenida Paulo Erlei Alves Abrantes, 1325, Bairro Três Poços, 27240-560 Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Suzuki, Paulo Atsushi [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Fiorani, Jean Marc; David, Nicolas; Vilasi, Michel [Université de Lorraine, Institut Jean Lamour, Faculté des Sciences et Technologies, BP 70239, F-54506 Vandoeuvre-lès-Nancy (France)

2013-11-05

Highlights: •Ta–Ge phase diagram propose for the first time. •The phase αTa{sub 5}Ge{sub 3} was not observed in samples investigated in this work. •Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. -- Abstract: In the present work, the Ta–Ge phase diagram has been experimentally studied, considering the inexistence of a Ta–Ge phase diagram in the literature. The samples were prepared via arc melting and characterized by Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray Diffraction (XRD). The intermetallics phases βTa{sub 3}Ge, αTa{sub 3}Ge, βTa{sub 5}Ge{sub 3} and TaGe{sub 2} where confirmed in this system. Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. The phases βTa{sub 3}Ge and βTa{sub 5}Ge{sub 3} solidifies congruently while TaGe{sub 2} is formed through a peritectic transformation. The temperature of the Ta-rich eutectic (L ↔ Ta{sub ss} + βTa{sub 3}Ge) was measured by the Pirani-Alterthum method at 2440 °C and the Ge-rich eutectic (L ↔ TaGe{sub 2} + Ge{sub ss}) by DTA at 937 °C.

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

2016-01-01

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang

2016-10-28

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

Science.gov (United States)

Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

2017-07-01

Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

From X-Rays to MRI: Physics in GE

Science.gov (United States)

Schmitt, Roland W.

2004-03-01

The GE Research Laboratory, founded in 1900, became the first laboratory of scientific research in U.S. industry. William Coolidge, a physicist, joined the laboratory in 1905 and produced two advances of immense importance. The first, ductile tungsten, is still the heart of every incandescent light bulb. The second, the "Coolidge" X-Ray tube, remains an essential tool of modern medicine. In the process, Coolidge explored two main approaches of physics in industry. One addresses a commercial problem or opportunity (better light bulbs) and finds interesting physics. The other explores interesting physics (X-rays) and creates a commercial opportunity. This paper addresses the mix of these approaches during GE's years as an "electric" (and therefore physics-based) company. Episodes include the following: the work of Irving Langmuir (1932 Nobel laureate in chemistry, but as much physicist as chemist); the post-World War II "golden age of industrial physics" when the endless frontier offered opportunities from nuclear power to diamond making to superconductivity; the Nobel-prize winning work of Ivar Giaever; and interdisciplinary efforts that enabled GE to become a world business leader in two medical diagnostic technologies it did not invent: computed tomography and magnetic resonance imaging. I will speculate on whether this mix of problem-driven and opportunity-driven effort is as relevant to the 21st century as it was to the 20th.

Accelerator study note: An attempt of 1 GeV linac

International Nuclear Information System (INIS)

Kato, Takao.

1987-01-01

A hypothetical 1 GeV linac is described, including its structure (which includes an ion source, radio frequency quadrupole linac, drift type linac, and coupled cavity linac), criteria for optimized design, cost optimization, frequency dependability of high frequency electric power loss, tuning during operation, the general rf system, computer codes and example calculations, beam dynamics simulation, and reduction of energy spread through the use of a debuncher

Solid state synthesis of Mn{sub 5}Ge{sub 3} in Ge/Ag/Mn trilayers: Structural and magnetic studies

Energy Technology Data Exchange (ETDEWEB)

Myagkov, V.G.; Bykova, L.E.; Matsynin, A.A.; Volochaev, M.N.; Zhigalov, V.S.; Tambasov, I.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Mikhlin, Yu L. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation); Velikanov, D.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Bondarenko, G.N. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation)

2017-02-15

The thin-film solid-state reaction between elemental Ge and Mn across chemically inert Ag layers with thicknesses of (0, 0.3, 1 and 2.2 µm) in Ge/Ag/Mn trilayers was studied for the first time. The initial samples were annealed at temperatures between 50 and 500 °C at 50 °C intervals for 1 h. The initiation temperature of the reaction for Ge/Mn (without a Ag barrier layer) was ~ 120 °C and increased slightly up to ~ 250 °C when the Ag barrier layer thickness increased up to 2.2 µm. In spite of the Ag layer, only the ferromagnetic Mn{sub 5}Ge{sub 3} compound and the Nowotny phase were observed in the initial stage of the reaction after annealing at 500 °C. The cross-sectional studies show that during Mn{sub 5}Ge{sub 3} formation the Ge is the sole diffusing species. The magnetic and cross-sectional transmission electron microscopy (TEM) studies show an almost complete transfer of Ge atoms from the Ge film, via a 2.2 µm Ag barrier layer, into the Mn layer. We attribute the driving force of the long-range transfer to the long-range chemical interactions between reacting Mn and Ge atoms. - Graphical abstract: The direct visualization of the solid state reaction between Mn and Ge across a Ag buffer layer at 500 °C. - Highlights: • The migration of Ge, via an inert 2.2 µm Ag barrier, into a Mn layer. • The first Mn{sub 5}Ge{sub 3} phase was observed in reactions with different Ag layers. • The Ge is the sole diffusing species during Mn{sub 5}Ge{sub 3} formation • The long-range chemical interactions control the Ge atomic transfer.

Coarsening of Ni–Ge solid-solution precipitates in “inverse” Ni3Ge alloys

International Nuclear Information System (INIS)

Ardell, Alan J.; Ma Yong

2012-01-01

Highlights: ► We report microstructural evolution of disordered Ni–Ge precipitates in Ni 3 Ge alloys. ► Coarsening kinetics and particle size distributions are presented. ► Data are analyzed quantitatively using the MSLW theory, but agreement is only fair. ► The shapes of large precipitates are unusual, with discus or boomerang cross-sections. ► Results are compared with morphology, kinetics of Ni–Al in inverse Ni 3 Al alloys. - Abstract: The morphological evolution and coarsening kinetics of Ni–Ge solid solution precipitates from supersaturated solutions of hypostoichiometric Ni 3 Ge were investigated in alloys containing from 22.48 to 23.50 at.% Ge at 600, 650 and 700 °C. The particles evolve from spheres to cuboids, though the flat portions of the interfaces are small. At larger sizes the precipitates coalesce into discus shapes, and are sometimes boomerang-shaped in cross section after intersection. The rate constant for coarsening increases strongly with equilibrium volume fraction, much more so than predicted by current theories; this is very different from the coarsening behavior of Ni 3 Ge precipitates in normal Ni–Ge alloys and of Ni–Al precipitates in inverse Ni 3 Al alloys. The activation energy for coarsening, 275.86 ± 24.17 kJ/mol, is somewhat larger than the result from conventional diffusion experiments, though within the limits of experimental error. Quantitative agreement between theory and experiment, estimated using available data on tracer diffusion coefficients in Ni 3 Ge, is fair, the calculated rate constants exceeding measured ones by a factor of about 15. The particle size distributions are not in very good agreement with the predictions of any theory. These results are discussed in the context of recent theories and observations.

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Science.gov (United States)

Fernando, Nalin S.; Nunley, T. Nathan; Ghosh, Ayana; Nelson, Cayla M.; Cooke, Jacqueline A.; Medina, Amber A.; Zollner, Stefan; Xu, Chi; Menendez, Jose; Kouvetakis, John

2017-11-01

Epitaxial Ge layers on a Si substrate experience a tensile biaxial stress due to the difference between the thermal expansion coefficients of the Ge epilayer and the Si substrate, which can be measured using asymmetric X-ray diffraction reciprocal space maps. This stress depends on temperature and affects the band structure, interband critical points, and optical spectra. This manuscripts reports careful measurements of the temperature dependence of the dielectric function and the interband critical point parameters of bulk Ge and Ge epilayers on Si using spectroscopic ellipsometry from 80 to 780 K and from 0.8 to 6.5 eV. The authors find a temperature-dependent redshift of the E1 and E1 + Δ1 critical points in Ge on Si (relative to bulk Ge). This redshift can be described well with a model based on thermal expansion coefficients, continuum elasticity theory, and the deformation potential theory for interband transitions. The interband transitions leading to E0‧ and E2 critical points have lower symmetry and therefore are not affected by the stress.

Investigation of electrochemical reduction of GeO2 to Ge in molten CaCl2-NaCl

International Nuclear Information System (INIS)

Rong, Liangbin; He, Rui; Wang, Zhiyong; Peng, Junjun; Jin, Xianbo; Chen, George Z.

2014-01-01

Electrochemical reduction of solid GeO 2 has been investigated in the mixed CaCl 2 -NaCl melt at 1023 K for developing a more efficient process for preparation of Ge. Cyclic voltammetry and potentiostatic electrolysis were applied to study the GeO 2 -loaded metallic cavity electrode. In addition, porous GeO 2 pellets were reduced by potentiostatic and constant cell voltage electrolysis with a graphite anode, and the electrolysis products were analyzed by powder X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectrometry, focusing on understanding the reduction mechanism and the impact of electrode potential on the product purity. It was found that the reduction of GeO 2 to Ge occurred at a potential of about -0.50 V (vs. Ag/Ag + ), but generating various calcium germanates simultaneously, whose reduction was a little more difficult and needed a potential more negative than -1.00 V. However, if the cathode potential exceeded -1.60 V, Ca (or Na) - Ge intermetallic compounds might form. These results gave an appropriate potential range between -1.10 and -1.40 V for the production of pure germanium. Rapid electrolysis of GeO 2 to pure Ge has been realized at a cell voltage of 2.5 V with a current efficiency of about 92%

The coarsening process of Ge precipitates in an Al-4 wt.% Ge alloy

Energy Technology Data Exchange (ETDEWEB)

Deaf, G.H

2004-05-01

In this paper the results of a quantitative transmission electron microscopy (TEM) investigation of the precipitation process of Ge in an Al-4 wt.% Ge alloy are described. Two crystallographic orientation relationships between the irregular germanium precipitate and aluminum matrix were found to be [1 0 0]{sub Ge} || [1 1 0]{sub Al} and [1 1 4]{sub Ge} || [1 0 0]{sub Al}. The irregular germanium precipitates formed on [0 0 1]{sub Al} habit planes. The origin of the irregular shape is due to the existence of a highly anisotropic interfacial energy as well as in an isotropic growth rate along <1 1 0>{sub A1} directions. Particles sizes were determined for variety of isothermal ageing times at 348, 423 and 523 K. The coarsening of the different morphologies of Ge precipitates was found to obey Ostwald ripening kinetics. The TEM results showed that the coarsening of irregular particles was due to the interfacial coalescence between these particles. Nine different morphologies have been distinguished in the form of (i) irregular particles, (ii) spheres, (iii) hexagonal plates, (iv) rods, (v) triangular plates, (vi) laths, (vii) small tetrahedra, (viii) rectangular plates, and (ix) Lamellae shape.

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO{sub 2} interface after capping with Al{sub 2}O{sub 3} layer

Energy Technology Data Exchange (ETDEWEB)

Paleari, S., E-mail: s.paleari6@campus.unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Molle, A. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Accetta, F. [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Lamperti, A.; Cianci, E. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Fanciulli, M., E-mail: marco.fanciulli@unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy)

2014-02-01

The electrical activity of Ge dangling bonds is investigated at the interface between GeO{sub 2}-passivated Ge(1 1 1) substrate and Al{sub 2}O{sub 3} grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al{sub 2}O{sub 3}/GeO{sub 2}/Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices (<10{sup 10} cm{sup −2}). In particular, it is shown that capping the GeO{sub 2}-passivated Ge(1 1 1) with Al{sub 2}O{sub 3} has no impact on the microstructure of the Ge dangling bond.

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

International Nuclear Information System (INIS)

Zhang, Rui; Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi

2013-01-01

The ultrathin GeO x /Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al 2 O 3 /Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO x layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of ∼0.3 nm with an increase in the GeO x thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of ∼0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO x /Ge interfaces on Ge (100) and (111) surfaces.

Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties.

Science.gov (United States)

Sims, Patrick E; Chizmeshya, Andrew V G; Jiang, Liying; Beeler, Richard T; Poweleit, Christian D; Gallagher, James; Smith, David J; Menéndez, José; Kouvetakis, John

2013-08-21

In this work, we extend our strategy previously developed to synthesize functional, crystalline Si(5-2y)(AlX)y {X = N,P,As} semiconductors to a new class of Ge-III-V hybrid compounds, leading to the creation of (InP)(y)Ge(5-2y) analogues. The compounds are grown directly on Ge-buffered Si(100) substrates using gas source MBE by tuning the interaction between Ge-based P(GeH3)3 precursors and In atoms to yield nanoscale "In-P-Ge3" building blocks, which then confer their molecular structure and composition to form the target solids via complete elimination of H2. The collateral production of reactive germylene (GeH2), via partial decomposition of P(GeH3)3, is achieved by simple adjustment of the deposition conditions, leading to controlled Ge enrichment of the solid product relative to the stoichiometric InPGe3 composition. High resolution XRD, XTEM, EDX, and RBS indicate that the resultant monocrystalline (InP)(y)Ge(5-2y) alloys with y = 0.3-0.7 are tetragonally strained and fully coherent with the substrate and possess a cubic diamond-like structure. Molecular and solid-state ab initio density functional theory (DFT) simulations support the viability of "In-P-Ge3" building-block assembly of the proposed crystal structures, which consist of a Ge parent crystal in which the P atoms form a third-nearest-neighbor sublattice and "In-P" dimers are oriented to exclude energetically unfavorable In-In bonding. The observed InP concentration dependence of the lattice constant is closely reproduced by DFT simulation of these model structures. Raman spectroscopy and ellipsometry are also consistent with the "In-P-Ge3" building-block interpretation of the crystal structure, while the observation of photoluminescence suggests that (InP)(y)Ge(5-2y) may have important optoelectronic applications.

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

Directory of Open Access Journals (Sweden)

Bo Zhang

2014-01-01

Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

DEFF Research Database (Denmark)

Vincent, B.; Gencarelli, F.; Bender, H.

2011-01-01

In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

International Nuclear Information System (INIS)

Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

2011-01-01

Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

International Nuclear Information System (INIS)

RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

2007-01-01

The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

International Nuclear Information System (INIS)

Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

2012-01-01

We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

A design of 3 GeV CW electron accelerator facility

International Nuclear Information System (INIS)

Boldyshev, V.F.; Vishnyakov, V.A.; Gladkikh, P.N.

1987-01-01

A further progress of high-energy nuclear physics is related to the possibility of obtaining continuous intense polarized beams of 2-4 GeV electrons and gamma-quanta with low emittance and energy spread. A design of the accelerator facility proposed for these purposes is briefly outlined in this report. The design is based on the upgrading of the 2 GeV Kharkov electron linac (ELA) and the construction of a stretcher ring (SR) at its termination. Operation in the beam storage mode is intended also for nuclear physics experiments using internal targets and for producing synchrotron radiation. Reported are general characteristics of the ELA-SR complex, and the results of numerical computer simulation of a slow beam extraction at the third-order resonance of horizontal free oscillations with due regard for the radiation and synchronous oscillations

The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

Science.gov (United States)

Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

2018-03-01

The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

2016-07-11

The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: structure and optical properties

Science.gov (United States)

Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Stoffel, M.; Rinnert, H.; Vergnat, M.

2017-07-01

Ge(x)[SiO2](1-x) (0.1  ⩽  x  ⩽  0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Ge x [SiO2](1-x) films with x  ⩾  0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeO x clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

Improving the electrode performance of Ge through Ge@C core-shell nanoparticles and graphene networks.

Science.gov (United States)

Xue, Ding-Jiang; Xin, Sen; Yan, Yang; Jiang, Ke-Cheng; Yin, Ya-Xia; Guo, Yu-Guo; Wan, Li-Jun

2012-02-08

Germanium is a promising high-capacity anode material for lithium ion batteries, but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. A double protection strategy to improve the electrode performance of Ge through the use of Ge@C core-shell nanostructures and reduced graphene oxide (RGO) networks has been developed. The as-synthesized Ge@C/RGO nanocomposite showed excellent cycling performance and rate capability in comparison with Ge@C nanoparticles when used as an anode material for Li ion batteries, which can be attributed to the electronically conductive and elastic RGO networks in addition to the carbon shells and small particle sizes of Ge. The strategy is simple yet very effective, and because of its versatility, it may be extended to other high-capacity electrode materials with large volume variations and low electrical conductivities.

Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

International Nuclear Information System (INIS)

Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

2012-01-01

In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

Control circuits for the 1.3 GeV electron synchrotron

International Nuclear Information System (INIS)

Asaoka, S.; Shiino, K.; Yoshioka, M.; Norimura, K.

1980-01-01

Following control circuits for the 1.3 GeV electron synchrotron, Institute for Nuclear Study, University of Tokyo, have been designed and constructed. 1. Variable delay circuits for the timing pulse of the synchrotron. 2. An alarm circuit for sputter ion pumps. 3. A sample and hold circuit for digital display and computer control of the beam intensity. This report describes detailes of the circuits and their specificatons. (author)

Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

Energy Technology Data Exchange (ETDEWEB)

De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

2016-04-07

We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0 νββ decay searches of 76Ge

Science.gov (United States)

Bhike, Megha; Fallin, B.; Krishichayan; Tornow, W.

2015-02-01

The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ∼ 86%76Ge and ∼ 14%74Ge used in the 0 νββ searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the 3H (p , n)3He, 2H (d , n)3He and 3H (d , n)4He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution γ-ray spectroscopy was used to determine the γ-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the 74Ge (n , γ)75Ge reaction, the present data are about a factor of two larger than predicted. It was found that the 74Ge (n , γ)75Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the 76Ge (n , γ)77Ge yield due to the larger cross section of the former reaction.

Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

International Nuclear Information System (INIS)

Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

2012-01-01

Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

Ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) – New representatives of the YIrGe{sub 2} type

Energy Technology Data Exchange (ETDEWEB)

Voßwinkel, Daniel; Heletta, Lukas; Hoffmann, Rolf-Dieter; Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de

2016-11-15

The YIrGe{sub 2} type ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) were synthesized from the elements by arc-melting and characterized by powder X-ray diffraction. The structure of DyRhGe{sub 2} was refined from single crystal X-ray diffractometer data: Immm, a = 426.49(9), b = 885.0(2), c = 1577.4(3) pm, wR2 = 0.0533, 637 F{sup 2} values, 30 variables (300 K data). The structure contains two crystallographically independent dysprosium atoms in pentagonal prismatic and hexagonal prismatic coordination. The three-dimensional [RhGe{sub 2}] polyanion is stabilized through covalent Rh–Ge (243–261 pm) and Ge–Ge (245–251 pm) bonding. The close structural relationship with the slightly rhodium-poorer germanides RE{sub 5}Rh{sub 4}Ge{sub 10} (≡ RERh{sub 0.8}Ge{sub 2}) is discussed. Temperature-dependent magnetic susceptibility measurements reveal Pauli paramagnetism for YRhGe{sub 2} and Curie-Weiss paramagnetism for RERhGe{sub 2} with RE = Gd, Tb, Dy and Ho. These germanides order antiferromagnetically at T{sub N} = 7.2(5), 10.6(5), 8.1(5), and 6.4(5) K, respectively. - Graphical abstract: The germanides RERhGe{sub 2} (RE = Y, Gd-Ho) are new representatives of the YIrGe{sub 2} type.

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

2015-09-01

In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

Tailoring the spin polarization in Ge/SiGe multiple quantum wells

International Nuclear Information System (INIS)

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario; Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni; Trivedi, Dhara; Song, Yang; Li, Pengki; Dery, Hanan

2013-01-01

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization

Theoretical scenarios for 103 GeV to 1019 GeV

International Nuclear Information System (INIS)

Kaul, R.K.

1996-01-01

Basic dogmas of particle physics are reviewed. Some of their implications beyond the standard model are explored. Higgs sector of the standard model of electroweak interactions is the weakest link in the model. Elementary Higgs field makes the model unnatural beyond about 10 3 GeV. Supersymmetry provides the most attractive framework where in this problem can be addressed. This new symmetry, relating fermions and bosons, is expected to be operative at about 10 3 GeV. In addition, grand unification of the fundamental interactions can be studied consistently only within a supersymmetric formulation. Inclusion of gravity with other interactions leads to supergravity theories, which should emerge as a low energy description of a more fundamental theory, the string-theory. Supersymmetry again is an essential feature of such a theory. Quantum gravity, with its characteristic scale of 10 19 GeV, may well be described by a superstring theory. (author). 28 refs., 1 fig

Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

Energy Technology Data Exchange (ETDEWEB)

Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2016-03-01

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

Self organized formation of Ge nanocrystals in multilayers

OpenAIRE

Zschintzsch-Dias, Manuel

2012-01-01

The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated...

Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

International Nuclear Information System (INIS)

Facetti, J.F.; Vallejos, A.

1971-01-01

Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions

Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

Energy Technology Data Exchange (ETDEWEB)

Facetti, J F; Vallejos, A [Asuncion Naciona Univ. (Paraguay). Inst. de Ciencias

1971-01-01

Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions.

High spin states in 66,68Ge

International Nuclear Information System (INIS)

Hermkens, U.; Becker, F.; Eberth, J.; Freund, S.; Mylaeus, T.; Skoda, S.; Teichert, W.; Werth, A. v.d.

1992-01-01

High spin states of 66,68 Ge have been investigated at the FN Tandem accelerator of the University of Koeln via the reactions 40 Ca( 32 S,α2p,4p) 66,68 Ge at a beam energy of 100 MeV and 58 Ni( 16 O,α2p) 68 Ge at 65 MeV. The OSIRIS spectrometer with 12 escape suppressed Ge detectors was used to measure γγ coincidences and γ-ray angular distributions. In 66 Ge ( 68 Ge) 33 (22) new levels were found and 63 (62) new γ-transitions were placed in the level scheme. Both nuclei show a rather complicated but similar excitation pattern, ruled by the interplay of quasiparticle and collective degrees of freedom. The results are compared to the recently published EXVAM calculations for 68 Ge. (orig.)

The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

International Nuclear Information System (INIS)

Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

2013-01-01

The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

Science.gov (United States)

Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

2014-10-01

Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO2/Si counterparts.

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

DEFF Research Database (Denmark)

Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

2012-01-01

to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

Search for associated production of charmed particles in π-p collisions at 40 GeV/c

International Nuclear Information System (INIS)

Apel', V.D.; Bertoluchchi, E.; Viktorov, V.A.

1976-01-01

At the 70 GeV IHEP accelerator a search for the associated production of charmed D mesons produced in the reaction π - p→D 0 anti D 0 n at 40 GeV/c incident pion momentum was performed. For D 0 →K 0 π 0 decay identification a system of multiwire spark and proportional chambers and hodoscopes were used, detecting Ksub(s)sup(0)→πsup(+)πsup(-) decay, and 648-channel hodoscope spectrometer with the on-line computer was used to detect γ's from π 0 decay

Effect of Ge surface termination on oxidation behavior

Science.gov (United States)

Lee, Younghwan; Park, Kibyung; Cho, Yong Soo; Lim, Sangwoo

2008-09-01

Sulfur-termination was formed on the Ge(1 0 0) surface using (NH 4) 2S solution. Formation of Ge-S and the oxidation of the S-terminated Ge surface were monitored with multiple internal reflection Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. In the 0.5, 5, or 20% (NH 4) 2S solution, H-termination on the Ge(1 0 0) surface was substituted with S-termination in 1 min. When the S-terminated Ge(1 0 0) surface was exposed in air ambient, the oxidation was retarded for about 3600 min. The preservation time of the oxide layer up to one monolayer of S-terminated Ge(1 0 0) surface was about 120 times longer than for the H-terminated Ge(1 0 0) surface. However, the oxidation of S-terminated Ge(1 0 0) surface drastically increased after the threshold time. There was no significant difference in threshold time between S-terminations formed in 0.5, 5, and 20% (NH 4) 2S solutions. With the surface oxidation, desorption of S on the Ge surface was observed. The desorption behavior of sulfur on the S-terminated Ge(1 0 0) surface was independent of the concentration of the (NH 4) 2S solution that forms S-termination. Non-ideal S-termination on Ge surfaces may be related to drastic oxidation of the Ge surface. Finally, with the desulfurization on the S-terminated Ge(1 0 0) surface, oxide growth is accelerated.

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

Science.gov (United States)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

Science.gov (United States)

Aubin, J.; Hartmann, J. M.

2018-01-01

We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300-350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4-21 nm min-1 range). The evolution of the Sn content x with the F (SnCl4) 2 ·/F (Ge2H6) mass-flow ratio was fitted by x2/(1 - x) = n ·F (SnCl4) 2 ·/F (Ge2H6), with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300-350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min-1. The associated activation energy was low, i.e. Ea = 10 kcal mol-1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

Shallow acceptors in strained Ge/Ge1-xSix heterostructures with quantum wells

International Nuclear Information System (INIS)

Aleshkin, V.Ya.; Andreev, B.A.; Gavrilenko, V.I.; Erofeeva, I.V.; Kozlov, D.V.; Kuznetsov, O.A.

2000-01-01

Dependence of acceptor localized state energies in quantum wells (strained layers of Ge in heterostructures Ge/Ge 1-x Si x ) on the width of quantum well and position in it was studied theoretically. Spectrum of impurity absorption in the far infrared range was calculated. Comparison of the results calculated and observed photoconductivity spectra permits estimating acceptor distribution over quantum well and suggesting conclusion that acceptors can be largely concentrated near heteroboundaries. Absorption spectrum was calculated bearing in mind resonance impurity states, which permits explaining the observed specific features in the photoconductivity spectrum short-wave range by transition to resonance energy levels, bound to upper subzones of dimensional quantization [ru

Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient

Science.gov (United States)

Ito, Koichi; Ohta, Akio; Kurosawa, Masashi; Araidai, Masaaki; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

The growth of a two-dimensional crystal of Ge atoms on an atomically flat Ag(111) surface has been demonstrated by the thermal annealing of a heteroepitaxial Ag/Ge structure in N2 ambient at atmospheric pressure. The surface morphology and chemical bonding features of heteroepitaxial Ag(111) grown on wet-cleaned Ge(111) after annealing at different temperatures and for various times have been systematically investigated to control the surface segregation of Ge atoms and the planarization of the heteroepitaxial Ag(111) surface.

Magnetic and electrical properties of epitaxial GeMn

Energy Technology Data Exchange (ETDEWEB)

Ahlers, Stefan

2009-01-15

In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments

International Nuclear Information System (INIS)

Montalenti, F; Marzegalli, A; Capellini, G; Seta, M De; Miglio, Leo

2007-01-01

A set of recent results concerning lateral and vertical ordering of Ge islands grown on Si(001) is reviewed. Experimental data generated by chemical vapour deposition and analysed by atomic force microscopy and photoelectron spectroscopy are compared with computer simulations and modelling based on atomistic approaches and continuum theory. In particular, we show that it is possible to probe experimentally the detailed strain field generated by buried Ge islands at the surface of the Si capping layer. The observed arrangement of small Ge islands grown over the capping layer is demonstrated to be very close to the one predicted by a simple model where the local chemical potential is inferred from the strain field at the atomic scale, as given by Tersoff-potential molecular dynamics simulations. Moreover, we review recent experimental evidence for lateral ordering, triggered by partial Si capping, in the first layer of Ge islands on Si(001). Theoretical support is given by showing that when two islands lie in close proximity the elastic field is likely to generate a flow of atoms leading to an effective gliding motion along opposite directions of both islands, eventually stopped by the presence of further neighbouring islands

Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Energy Technology Data Exchange (ETDEWEB)

Sawano, K., E-mail: sawano@tcu.ac.jp [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Hoshi, Y.; Kubo, S. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Arimoto, K.; Yamanaka, J.; Nakagawa, K. [Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu (Japan); Hamaya, K. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka (Japan); Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka (Japan); Shiraki, Y. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan)

2016-08-31

Structural and electrical properties of a Ge(111) layer directly grown on a Si(111) substrate are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer, where strain-relieving dislocations are confined close to a Ge/Si interface. Consequently, a density of holes, which unintentionally come from crystal defects, is highly suppressed below 4 × 10{sup 16} cm{sup −3}, which leads to significantly high hole Hall mobility exceeding 1500 cm{sup 2}/Vs at room temperature. By layer transfer of the grown Ge layer, we also fabricate a Ge(111)-on-Insulator, which is a promising template for high-performance Ge-based electronic and photonic devices. - Highlights: • A high-quality Ge layer is epitaxially grown on a Si(111) by two-step growth manner. • Growth conditions, such as growth temperatures, are optimized. • Very high hole mobility is obtained from Ge(111) grown on Si(111). • High-quality thin Ge-on-Insulator with (111) orientation is obtained.

Digital computers in action

CERN Document Server

Booth, A D

1965-01-01

Digital Computers in Action is an introduction to the basics of digital computers as well as their programming and various applications in fields such as mathematics, science, engineering, economics, medicine, and law. Other topics include engineering automation, process control, special purpose games-playing devices, machine translation and mechanized linguistics, and information retrieval. This book consists of 14 chapters and begins by discussing the history of computers, from the idea of performing complex arithmetical calculations to the emergence of a modern view of the structure of a ge

Interfacial processes in the Pd/a-Ge:H system

Science.gov (United States)

Edelman, F.; Cytermann, C.; Brener, R.; Eizenberg, M.; Weil, R.; Beyer, W.

1993-06-01

The kinetics of phase transformation has been studied in a two-layer structure of Pd/a-Ge:H after vacuum annealing at temperatures from 180 to 500°C. The a-Ge:H was deposited at 250°C on both c-Si and cleaved NaCl substrates in an RF glow discharge from a GeH 4/H 2 mixture. It was found that, similarly to the Pd/c-Ge and the Pd/a-Ge (e-gun deposited) systems, in the case of 0.15-0.2 μm Pd/0.6-1.0 μm a-Ge:H interfacial germanides formed first through the production of Pd 2Ge (plus a small amount of PdGe), and then PdGe was produced. The growth of both compounds was found to be diffusion-controlled. The nonreacted a-Ge:H layer beneath the germanide overlayer crystallized at 400-500°C. A reverse sequence of germanides formation was revealed in the case of 50 nm Pd/30 nm a-Ge:H, studied by in situ heat treatment in the TEM utilizing non-supported samples. The first germanide detected was PdGe and then, as a result of PdGe and Ge reaction or the PdGe decomposition, Pd 2Ge formed. The temperature dependence of the incubation time before the first ˜ 10 nm PdGe grains formed, followed an Arrhenius curve with an activation energy of 1.45 eV.

Kinetics of plasma oxidation of germanium-tin (GeSn)

Science.gov (United States)

Wang, Wei; Lei, Dian; Dong, Yuan; Zhang, Zheng; Pan, Jisheng; Gong, Xiao; Tok, Eng-Soon; Yeo, Yee-Chia

2017-12-01

The kinetics of plasma oxidation of GeSn at low temperature is investigated. The oxidation process is described by a power-law model where the oxidation rate decreases rapidly from the initial oxidation rate with increasing time. The oxidation rate of GeSn is higher than that of pure Ge, which can be explained by the higher chemical reaction rate at the GeSn-oxide/GeSn interface. In addition, the Sn atoms at the interface region exchange positions with the underlying Ge atoms during oxidation, leading to a SnO2-rich oxide near the interface. The bandgap of GeSn oxide is extracted to be 5.1 ± 0.2 eV by XPS, and the valence band offset at the GeSn-oxide/GeSn heterojunction is found to be 3.7 ± 0.2 eV. Controlled annealing experiments demonstrate that the GeSn oxide is stable with respect to annealing temperatures up to 400 °C. However, after annealing at 450 °C, the GeO2 is converted to GeO, and desorbs from the GeSn-oxide/GeSn, leaving behind Sn oxide.

Electron Transport Properties of Ge nanowires

Science.gov (United States)

Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

2003-03-01

Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

Stellar Laboratories: New GeV and Ge VI Oscillator Strengths and their Validation in the Hot White Dwarf RE0503-289

Science.gov (United States)

Rauch, T.; Werner, K.; Biemont, E.; Quinet, P.; Kruk, J. W.

2013-01-01

State-of-the-art spectral analysis of hot stars by means of non-LTE model-atmosphere techniques has arrived at a high level of sophistication. The analysis of high-resolution and high-S/N spectra, however, is strongly restricted by the lack of reliable atomic data for highly ionized species from intermediate-mass metals to trans-iron elements. Especially data for the latter has only been sparsely calculated. Many of their lines are identified in spectra of extremely hot, hydrogen-deficient post-AGB stars. A reliable determination of their abundances establishes crucial constraints for AGB nucleosynthesis simulations and, thus, for stellar evolutionary theory. Aims. In a previous analysis of the UV spectrum of RE 0503-289, spectral lines of highly ionized Ga, Ge, As, Se, Kr, Mo, Sn, Te, I, and Xe were identified. Individual abundance determinations are hampered by the lack of reliable oscillator strengths. Most of these identified lines stem from Ge V. In addition, we identified Ge VI lines for the first time. We calculated Ge V and Ge VI oscillator strengths in order to reproduce the observed spectrum. Methods. We newly calculated Ge V and Ge VI oscillator strengths to consider their radiative and collisional bound-bound transitions in detail in our non-LTE stellar-atmosphere models for the analysis of the Ge IV-VI spectrum exhibited in high-resolution and high-S/N FUV (FUSE) and UV (ORFEUS/BEFS, IUE) observations of RE 0503-289. Results. In the UV spectrum of RE 0503-289, we identify four Ge IV, 37 Ge V, and seven Ge VI lines. Most of these lines are identified for the first time in any star. We can reproduce almost all Ge IV, GeV, and Ge VI lines in the observed spectrum of RE 0503-289 (T(sub eff) = 70 kK, log g = 7.5) at log Ge = -3.8 +/- 0.3 (mass fraction, about 650 times solar). The Ge IV/V/VI ionization equilibrium, that is a very sensitive T(sub eff) indicator, is reproduced well. Conclusions. Reliable measurements and calculations of atomic data are a

Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

2015-10-14

Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

Space-charge effects in the Fermilab Main Ring at 8 GeV

International Nuclear Information System (INIS)

Mane, S.R.

1989-03-01

I use computer tracking to investigate the effects of space-charge on particle motion in the Fermilab Main Ring at p = 8 GeV/c. The results are found to agree with the Laslett tuneshift formula. Simple model cases are also studied to speed up the tracking. The effects of synchrotron oscillations, via tune modulation and dispersion, are included. 2 refs., 5 figs

Computer control system of TRISTAN

International Nuclear Information System (INIS)

Kurokawa, Shin-ichi; Shinomoto, Manabu; Kurihara, Michio; Sakai, Hiroshi.

1984-01-01

For the operation of a large accelerator, it is necessary to connect an enormous quantity of electro-magnets, power sources, vacuum equipment, high frequency accelerator and so on and to control them harmoniously. For the purpose, a number of computers are adopted, and connected with a network, in this way, a large computer system for laboratory automation which integrates and controls the whole system is constructed. As a distributed system of large scale, the functions such as electro-magnet control, file processing and operation control are assigned to respective computers, and the total control is made feasible by network connection, at the same time, as the interface with controlled equipment, the CAMAC (computer-aided measurement and control) is adopted to ensure the flexibility and the possibility of expansion of the system. Moreover, the language ''NODAL'' having network support function was developed so as to easily make software without considering the composition of more complex distributed system. The accelerator in the TRISTAN project is composed of an electron linear accelerator, an accumulation ring of 6 GeV and a main ring of 30 GeV. Two ring type accelerators must be synchronously operated as one body, and are controlled with one computer system. The hardware and software are outlined. (Kako, I.)

Coarsening of Ni-Ge solid-solution precipitates in 'inverse' Ni{sub 3}Ge alloys

Energy Technology Data Exchange (ETDEWEB)

Ardell, Alan J., E-mail: alan.ardell@gmail.com [National Science Foundation, 4201 Wilson Boulevard, Arlington, VA 22230 (United States); Ma Yong [Aquatic Sensor Network Technology LLC, Storrs, CT 06268 (United States)

2012-07-30

Highlights: Black-Right-Pointing-Pointer We report microstructural evolution of disordered Ni-Ge precipitates in Ni{sub 3}Ge alloys. Black-Right-Pointing-Pointer Coarsening kinetics and particle size distributions are presented. Black-Right-Pointing-Pointer Data are analyzed quantitatively using the MSLW theory, but agreement is only fair. Black-Right-Pointing-Pointer The shapes of large precipitates are unusual, with discus or boomerang cross-sections. Black-Right-Pointing-Pointer Results are compared with morphology, kinetics of Ni-Al in inverse Ni{sub 3}Al alloys. - Abstract: The morphological evolution and coarsening kinetics of Ni-Ge solid solution precipitates from supersaturated solutions of hypostoichiometric Ni{sub 3}Ge were investigated in alloys containing from 22.48 to 23.50 at.% Ge at 600, 650 and 700 Degree-Sign C. The particles evolve from spheres to cuboids, though the flat portions of the interfaces are small. At larger sizes the precipitates coalesce into discus shapes, and are sometimes boomerang-shaped in cross section after intersection. The rate constant for coarsening increases strongly with equilibrium volume fraction, much more so than predicted by current theories; this is very different from the coarsening behavior of Ni{sub 3}Ge precipitates in normal Ni-Ge alloys and of Ni-Al precipitates in inverse Ni{sub 3}Al alloys. The activation energy for coarsening, 275.86 {+-} 24.17 kJ/mol, is somewhat larger than the result from conventional diffusion experiments, though within the limits of experimental error. Quantitative agreement between theory and experiment, estimated using available data on tracer diffusion coefficients in Ni{sub 3}Ge, is fair, the calculated rate constants exceeding measured ones by a factor of about 15. The particle size distributions are not in very good agreement with the predictions of any theory. These results are discussed in the context of recent theories and observations.

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics

International Nuclear Information System (INIS)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

2016-01-01

Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal–oxide–semiconductor field-effect-transistors (MOSFETs) with GeO x /Al 2 O 3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8–20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al 2 O 3 gate stacks are evaluated experimentally. The bulk charges in Al 2 O 3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  10 12 cm −2 at the GeO x /Ge interface and  −2.3  ×  10 12 cm −2 at the Al 2 O 3 /GeO x interface. The electric dipole at the Al 2 O 3 /GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  10 13 cm −2 . The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al 2 O 3 /GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al 2 O 3 /GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement. (paper)

Impact parameter analysis of proton-antiproton elastic scattering from √s=7.6 GeV to √s=546 GeV

International Nuclear Information System (INIS)

Fearnley, T.

1985-09-01

The proton-antiproton elastic profile function GAMMA (b) and inelastic overlap function Gsub(in)(b) are calculated from a coherent set of proton-antiproton elastic scattering data at Psub(L)=30 and 50 GeV/c (√s=7.6 and 9.8 GeV), and at √s=53 and 546 GeV. The energy dependence of Gsub(in)(b) is studied in the low energy regime and in the high energy regime. The increase of the inelastic cross section from 50 GeV/c to 30 GeV/c and from √s=53 GeV to √s=546 GeV is found to originate from a peripheral increase of Gsub(in) around 1 fm, accompanied by a non-negligible central increase. The proton-antiproton collision at √s=53 GeV is shown to be slightly less absorptive centrally than pp at this energy, while it is more absorptive peripherally around 1.2 fm. The inelastic overlap functions strongly disagree with the predictions of geometrical scaling and factorizing eikonal models, both in the low energy regime psub(L)=30-50 GeV/c and in the high energy regime √s=53-546 GeV

Technology computer aided design for Si, SiGe and GaAs integrated circuits

CERN Document Server

Armstrong, GA

2007-01-01

The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

Science.gov (United States)

Yuryev, Vladimir A; Arapkina, Larisa V; Storozhevykh, Mikhail S; Chapnin, Valery A; Chizh, Kirill V; Uvarov, Oleg V; Kalinushkin, Victor P; Zhukova, Elena S; Prokhorov, Anatoly S; Spektor, Igor E; Gorshunov, Boris P

2012-07-23

: Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their 'condensation' fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films.Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed.By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

Energy Technology Data Exchange (ETDEWEB)

Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

2015-02-23

Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

Density functional study of the decomposition pathways of SiH₃ and GeH₃ at the Si(100) and Ge(100) surfaces.

Science.gov (United States)

Ceriotti, M; Montalenti, F; Bernasconi, M

2012-03-14

By means of first-principles calculations we studied the decomposition pathways of SiH₃ on Ge(100) and of GeH₃ on Si(100), of interest for the growth of crystalline SiGe alloys and Si/Ge heterostructures by plasma-enhanced chemical vapor deposition. We also investigated H desorption via reaction of two adsorbed SiH₂/GeH₂ species (β₂ reaction) or via Eley-Rideal abstraction of surface H atoms from the impinging SiH₃ and GeH₃ species. The calculated activation energies for the different processes suggest that the rate-limiting step for the growth of Si/Ge systems is still the β₂ reaction of two SiH₂ as in the growth of crystalline Si.

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong; von Känel, Hans; Schroeder, Thomas

2016-03-04

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.

Electron-electron interaction in p-SiGe/Ge quantum wells

International Nuclear Information System (INIS)

Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

2005-01-01

The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

Science.gov (United States)

Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

2010-03-01

It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

Ge extraction from gasification fly ash

Energy Technology Data Exchange (ETDEWEB)

Oriol Font; Xavier Querol; Angel Lopez-Soler; Jose M. Chimenos; Ana I. Fernandez; Silvia Burgos; Francisco Garcia Pena [Institute of Earth Sciences ' Jaume Almera' , Barcelona (Spain)

2005-08-01

Water-soluble germanium species (GeS{sub 2}, GeS and hexagonal-GeO{sub 2}) are generated during coal gasification and retained in fly ash. This fact together with the high market value of this element and the relatively high contents in the fly ashes of the Puertollano Integrated Gasification in Combined Cycle (IGCC) plant directed our research towards the development of an extraction process for this element. Major objectives of this research was to find a low cost and environmentally suitable process. Several water based extraction tests were carried out using different Puertollano IGCC fly ash samples, under different temperatures, water/fly ash ratios, and extraction times. High Ge extraction yields (up to 84%) were obtained at room temperature (25{sup o}C) but also high proportions of other trace elements (impurities) were simultaneously extracted. Increasing the extraction temperature to 50, 90 and 150{sup o}C, Ge extraction yields were kept at similar levels, while reducing the content of impurities, the water/fly ash ratio and extraction time. The experimental data point out the influence of chloride, calcium and sulphide dissolutions on the Ge extraction. 16 refs., 9 figs., 6 tabs.

Cluster self-organization of germanate systems: suprapolyhedral precursor clusters and self-assembly of K2Nd4Ge4O13(OH)4, K2YbGe4O10(OH), K2Sc2Ge2O7(OH)2, and KScGe2O6(PYR)

International Nuclear Information System (INIS)

Ilyushin, G.D.; Dem'yanets, L.N.

2008-01-01

One performed the computerized (the TOPOS 4.0 software package) geometric and topological analyses of all known types of K, TR-germanates (TR = La-Lu, Y, Sc, In). The skeleton structure are shown as three-dimensional 3D, K, TR, Ge-patterns (graphs) with remote oxygen atoms. TR 4 3 3 4 3 3 + T 4 3 4 3, K 2 YbGe 4 O 14 (OH) pattern, TR 6 6 3 6 + T1 6 8 6 + T2 3 6 8, K 2 Sc 2 Ge 2 O 7 (OH) 2 , TR 6 4 6 4 + T 6 4 6 and KScGe 2 O 6 - TR 6 6 3 6 3 4 + T1 6 3 6 + T2 6 4 3 patterns served as crystal-forming 2D TR,Ge-patterns for K 2 Nd 4 Ge 4 O 13 (OH) 4 . One performed the 3D-simulation of the mechanism of self-arrangement of the crystalline structures: cluster-precursor - parent chain - microlayer - microskeleton (super-precursor). Within K 2 Nd 4 Ge 4 O 13 (OH) 4 , K 2 Sc 2 Ge 2 O 7 (OH) 2 and KScGe 2 O 6 one identified the invariant type of the cyclic hexapolyhedral cluster-precursor consisting of TR-octahedrons linked by diorthogroups stabilized by K atoms. For K 2 Nd 4 Ge 4 O 13 (OH) 4 one determined the type of the cyclic tetrapolyhedral cluster-precursor consisting of TR-octavertices linked by tetrahedrons. The cluster CN within the layer just for KScGe 2 O 6 water-free germanate (the PYR pyroxene analog) is equal to 6 (the maximum possible value), while in the rest OH-containing germanates it constitutes 4. One studied the formation mechanism of Ge-radicals in the form of Ge 2 O 7 and Ge 4 O 13 groupings, GeO 3 chain and the tubular structure consisting of Ge 8 O 20 fixed cyclic groupings [ru

Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS

International Nuclear Information System (INIS)

Nakajima, K.; Hosaka, N.; Hattori, T.; Kimura, K.

2002-01-01

The Si/Ge/Si(0 0 1) multilayer with about 1 ML Ge layer is fabricated by evaporating Si overlayer on a Ge/Si(0 0 1) surface at 20-300 deg. C. The depth profile of the Ge atoms is observed by high-resolution Rutherford backscattering spectroscopy to investigate the possibility of Ge delta doping in Si. The observed profile of the Ge atoms spreads over several atomic layers even at 20 deg. C and a significant amount of Ge is located in the surface layer at higher temperatures. The results at 20-150 deg. C are well explained with two-layer model for surface segregation of the Ge atoms and the segregation rates are estimated. The activation energy for surface segregation of Ge atoms in amorphous Si is evaluated to be 0.035 eV, which is much smaller than the value reported for Si deposition at 500 deg. C. The small activation energy suggests that local heating during the Si deposition is dominant at low temperature

A Waveform Archiving System for the GE Solar 8000i Bedside Monitor.

Science.gov (United States)

Fanelli, Andrea; Jaishankar, Rohan; Filippidis, Aristotelis; Holsapple, James; Heldt, Thomas

2018-01-01

Our objective was to develop, deploy, and test a data-acquisition system for the reliable and robust archiving of high-resolution physiological waveform data from a variety of bedside monitoring devices, including the GE Solar 8000i patient monitor, and for the logging of ancillary clinical and demographic information. The data-acquisition system consists of a computer-based archiving unit and a GE Tram Rac 4A that connects to the GE Solar 8000i monitor. Standard physiological front-end sensors connect directly to the Tram Rac, which serves as a port replicator for the GE monitor and provides access to these waveform signals through an analog data interface. Together with the GE monitoring data streams, we simultaneously collect the cerebral blood flow velocity envelope from a transcranial Doppler ultrasound system and a non-invasive arterial blood pressure waveform along a common time axis. All waveform signals are digitized and archived through a LabView-controlled interface that also allows for the logging of relevant meta-data such as clinical and patient demographic information. The acquisition system was certified for hospital use by the clinical engineering team at Boston Medical Center, Boston, MA, USA. Over a 12-month period, we collected 57 datasets from 11 neuro-ICU patients. The system provided reliable and failure-free waveform archiving. We measured an average temporal drift between waveforms from different monitoring devices of 1 ms every 66 min of recorded data. The waveform acquisition system allows for robust real-time data acquisition, processing, and archiving of waveforms. The temporal drift between waveforms archived from different devices is entirely negligible, even for long-term recording.

Study of the interaction{pi}{sup +}p at 1.2 GeV/c {pi}{sup +} laboratory momentum; Estudio de la inteeraccion {pi}{sup +} p a 1,2 GeV/c

Energy Technology Data Exchange (ETDEWEB)

Ladron de Guevara, P

1973-07-01

We present the main results of a 0.33 events/urban experiment of {pi}{sup +} interactions in hydrogen at 1.2 GeV/c, using the 80 cm Saclay bubble chamber. the partial cross sections of the different reactions and the elastic differential cross section are computed by normalizing to the total cross section obtained by other groups. (Author) 34 refs.

Effects of Ge-132 and GeO2 on seed germination and seedling growth of Oenothera biennis L. under NaCl stress.

Science.gov (United States)

Liu, Yan; Hou, Long-Yu; Li, Qing-Mei; Jiang, Ze-Ping; Gao, Wei-Dong; Zhu, Yan; Zhang, Hai-Bo

2017-01-01

To investigate the effects of β-carboxyethyl germanium sequioxide (Ge-132) and germanium dioxide (GeO 2 ) on improving salt tolerance of evening primrose (Oenothera biennis L.), seed germination, seedling growth, antioxidase and malondialdehyde (MDA) were observed under treatments of various concentrations (0, 5, 10, 20, 30 μM) of Ge in normal condition and in 50 mM NaCl solution. The results showed that both Ge-132 and GeO 2 treatments significantly increased seed germination percentage and shoot length in dose-dependent concentrations but inhibited early root elongation growth. 5-30 μM Ge-132 and 10, 20 μM GeO 2 treatments could significantly mitigate even eliminate harmful influence of salt, representing increased percentage of seed germination, root length, ratio between length of root and shoot, and decreased shoot length. These treatments also significantly decreased peroxidase (POD) and catalase (CAT) activities and MDA content. The mechanism is likely that Ge scavenges reactive oxygen species - especially hydrogen peroxide (H 2 O 2 ) - by its electron configuration 4S 2 4P 2 so as to reduce lipid peroxidation. This is the first report about the comparison of bioactivity effect of Ge-132 and GeO 2 on seed germination and seedling growth under salt stress. We conclude that Ge-132 is better than GeO 2 on promoting salt tolerance of seed and seedling.

The computational study of adsorption of carbon monoxide on pristine and Ge-doped (6,0 zigzag models of BNNTs

Directory of Open Access Journals (Sweden)

Mahdi Rezaei Sameti

2014-07-01

Full Text Available The aim of this research is studying the effects of Ge-doped on CO adsorption on the outer and inner surfaces of (6, 0 zigzag model of boron nitride nanotube (BNNTs by using DFT theory. For this purpose, eight models of CO adsorption on the surfaces of BNNTs are considered. At first step, all structures were optimized at B3LYP and 6-31G (d standard base set and then the electronic structure, adsorption energy, HOMO - LUMO orbitals, gap energy, quantum molecular descriptors, and NQR parameters were determined. The bond lengths neighborhood sites of Ge-doped of BNNTs at all models were increased and the bond angles decreased. The small ad-sorption energy value and large interaction distance show that the adsorption of CO on BNNTs is weakly physical adsorption due to weak Van der Waals interaction. Our calculated results show that the adsorption of CO on the surface of undoped models is more favorable than Ge-doped models. The NQR parameters of the first layer in all the models are larger than those other layers.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

Energy Technology Data Exchange (ETDEWEB)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S. [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K' s Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

Computational modeling of the structure and the ionic conductivity of the solid electrolyte materials Li3AsS4 and its Ge substitutions

Science.gov (United States)

Al-Qawasmeh, Ahmad; Holzwarth, N. A. W.

Oak Ridge National Laboratory (G. Sahu et al.) reported that the substitution of Ge into Li3AsS4 leads to the composition Li3.334Ge0.334As0.666S4 with impressively high ionic conductivity . We use ab initio calculations to examine the structural relationships and the ionic conductivity mechanisms for pure Li3AsS4, Li3.334Ge0.334As0.666S4, and other compositions of these electrolytes. Supported by NSF Grant DMR-1105485 and 1507942 and WFU's DEAC cluster.

Influence of the entrance channel in the fusion reaction 318 MeV 74Ge+74Ge

International Nuclear Information System (INIS)

Zhu, L.H.; Cinausero, M.; Angelis, G. de; De Poli, M.; Fioretto, E.; Gadea, A.; Napoli, D.R.; Prete, G.; Lucarelli, F.

1998-01-01

Entrance channel effects in the fusion of heavy ions have been studied by using the 74 Ge+ 74 Ge reaction at 318 MeV. The population of the yrast superdeformed band in 144 Gd shows an increase when compared with the results obtained in the more asymmetric 48 Ti+ 100 Mo reaction at 215 MeV. The relative yields of the different evaporation residues produced in the 74 Ge+ 74 Ge and in the 48 Ti+ 100 Mo reactions are very similar, with the exception of the 145,144 Gd residual nuclei (3n and 4n decay channels) which are populated with a larger yield in the symmetric reaction. Statistical model calculations reproduce qualitatively such effect if a fission delay is explicitly taken into account. Effects related to fusion barrier fluctuations seem to be important in determining the spin distributions of the compound nucleus. The spectra of the high energy γ-rays emitted in the 74 Ge+ 74 Ge reaction have been measured as a function of the γ-ray multiplicity as well as in coincidence with selected evaporation residues. They are reproduced by standard statistical model calculations with GDR parameters taken from systematics, demonstrating that, in agreement with dynamical model prediction, the emission of γ-rays from the dinucleus formed in the earlier stage of the collision is unimportant. (orig.)

The germanides Er{sub 5}Pd{sub 4}Ge{sub 8} and Tm{sub 5}Pd{sub 4}Ge{sub 8}. 3D [Pd{sub 4}Ge{sub 8}] polyanions with Ge{sub 2} dumb-bells and Ge{sub 4} chains in cis-conformation

Energy Technology Data Exchange (ETDEWEB)

Heying, Birgit; Rodewald, Ute C.; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2017-07-01

Tm{sub 5}Pd{sub 4}Ge{sub 8} was synthesized by melting of the elements in an arc-melting furnace. The new germanide was characterized by powder and single-crystal X-ray diffraction: own structure type, P2{sub 1}/m, a=574.3(1), b=1380.4(3), c=836.4(1) pm, β=107.57(2) , V=0.6321 nm{sup 3}, wR2=0.0578, 2533 F{sup 2} values, 86 variables. The palladium and germanium atoms built up a three-dimensional [Pd{sub 4}Ge{sub 8}]{sup 15-} polyanionic network which contains a unique germanium substructure composed of the Zintl anions Ge{sub 2}{sup 6-} dumb-bells and Ge{sub 4}{sup 10-} chains in cis-conformation. The palladium atoms within the network have distorted square pyramidal germanium coordination. The three crystallographically independent thulium atoms have coordination numbers 15, 16 and 17 with partial motifs of the Frank-Kasper type polyhedra. The isotypic germanide Er{sub 5}Pd{sub 4}Ge{sub 8} forms only after annealing the arc-melted sample at 1070 K for 1 week: a=575.14(9), b=1386.3(3), c=838.4(1) pm, β=107.51(2) , V=0.6375 nm{sup 3}.

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al2O3 gate dielectrics

Science.gov (United States)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

2016-06-01

Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal-oxide-semiconductor field-effect-transistors (MOSFETs) with GeO x /Al2O3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8-20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al2O3 gate stacks are evaluated experimentally. The bulk charges in Al2O3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  1012 cm-2 at the GeO x /Ge interface and  -2.3  ×  1012 cm-2 at the Al2O3/GeO x interface. The electric dipole at the Al2O3/GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  1013 cm-2. The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al2O3/GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al2O3/GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement.

GE Healthcare | College of Engineering & Applied Science

Science.gov (United States)

Olympiad Girls Who Code Club FIRST Tech Challenge NSF I-Corps Site of Southeastern Wisconsin UW-Milwaukee ; Talent GE Healthcare is the founding partner of the Center for Advanced Embedded Systems (CAES), formerly GE Healthcare's needs for talent. Business Corporate Partners ANSYS Institute GE Healthcare Catalyst

Analysis of p-bar p scattering at 31 GeV and 62 GeV by the Chou-Yang model

International Nuclear Information System (INIS)

Padua, A.B. de; Covolan, R.J.M.; Souza Paes, J.T. de

1988-01-01

The p-bar p scattering is analysed at 31 GeV and 62 GeV energies for momentum transfers in the range O 2 . The experimental (dσ/dt)p-bar p values were fitted using a pure imaginary written as a sum of exponentials, that is, a(s,t)=a(s,O) σ n i=l α i e βit . Using the parameters obtained we have calculated the absorption constant K p-bar p the form factor and the mean square radius of the p-bar matter distribuition by the Chou-Yang model. These calculations reveal a ''dip'' around -t approx.= 1.3 (GeV/c) 2 at 31 GeV and 62 GeV. (author) [pt

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

International Nuclear Information System (INIS)

Knowlton, W.B.; Lawrence Berkeley Lab., CA

1995-07-01

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 angstrom Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 angstrom, 500 angstrom, and 300 angstrom per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 angstrom/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 angstrom/side appear to correspond with the phonon transmission study

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

Energy Technology Data Exchange (ETDEWEB)

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Framework 'interstitial' oxygen in La10(GeO4)5-(GeO5)O2 apatite electrolyte

International Nuclear Information System (INIS)

Pramana, S.S.; White, T.J.

2007-01-01

Oxygen conduction at low temperatures in apatites make these materials potentially useful as electrolytes in solid-oxide fuel cells, but our understanding of the defect structures enabling ion migration is incomplete. While conduction along [001] channels is dominant, considerable inter-tunnel mobility has been recognized. Using neutron powder diffraction of stoichiometric 'La 10 (GeO 4 ) 6 O 3 ', it has been shown that this compound is more correctly described as an La 10 (GeO 4 ) 5- (GeO 5 )O 2 apatite, in which high concentrations of interstitial oxygen reside within the channel walls. It is suggested that these framework interstitial O atoms provide a reservoir of ions that can migrate into the conducting channels of apatite, via a mechanism of inter-tunnel oxygen diffusion that transiently converts GeO 4 tetrahedra to GeO 5 distorted trigonal bipyramids. This structural modification is consistent with known crystal chemistry and may occur generally in oxide apatites. (orig.)

A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

2017-06-01

In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

Energy Technology Data Exchange (ETDEWEB)

Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

2014-10-15

We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.

Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

KAUST Repository

Dong, Y.

2014-07-26

Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

Silicon and Ge in the deep sea deduced from Si isotope and Ge measurements in giant glass sponges

Science.gov (United States)

Jochum, K. P.; Schuessler, J. A.; Haug, G. H.; Andreae, M. O.; Froelich, P. N.

2016-12-01

Biogenic silica, such as giant glass spicules of the deep-sea sponge Monorhaphis chuni, is an archive to monitor paleo-Si and -Ge in past seawater. Here we report on Si isotopes and Ge/Si ratios in up to 2.7 m long spicules using LA-(MC)-ICP-MS. Isotope ratios of Si are suitable proxies for Si concentrations in seawater, because Si isotope fractionation into biogenic silica is a function of seawater dissolved Si concentration. The δ30Si values for our specimens range from about - 0.5 ‰ to - 3.6 ‰ and are much lower than modern (>1000 m) seawater δ30Si of about 1.3 ‰. Interestingly, there is a systematic Si isotopic and Ge variation from the rim to the center of the cross sections, which we interpret as seawater paleo-Si and -Ge changes. The lifetime of the giant sponges appears to be between about 6 and 14 ka. These age estimates were obtained by comparing our analytical data with various paleo-markers of the glacial-interglacial termination. Thus, the entire Holocene and the end of the last glacial period are contained in the oldest giant spicules. The derived Si and Ge seawater concentrations are ca. 12 % higher and 20 % lower, respectively, during the late glacial than at present. Possible explanations for changing Si, Ge and Ge/Si during the deglaciation could be changes in riverine, glacial, and/or eolian deliveries of silica to the oceans and changes in marine sedimentary reverse weathering, which removes Ge into marine sediments during opal dissolution and diagenesis.

Strain-free Ge/GeSiSn Quantum Cascade Lasers Based on L-Valley Intersubband Transitions

National Research Council Canada - National Science Library

Soret, R. A; Sun, G; Cheng, H; Menendez, J; Khurgin, J

2007-01-01

The authors propose a Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a clean offset of 150 meV situated below other energy valleys Gamma and X...

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

Science.gov (United States)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Isobaric analogue states of 73Ge via 72Ge(3He,d)73As reaction

International Nuclear Information System (INIS)

Ramaswamy, C.R.; Puttaswamy, N.G.; Sarma, N.

1974-01-01

The 72 Ge( 3 He,d) 73 As reaction has been studied at 20 MeV incident 3 He energy using an MP tandem and a multigap spectrograph. The energy spectrum of deuterons in the region between 9 to 10.5 MeV excitation energy of 73 As shows analogue states corresponding to G.S., 570, 673, 805, 900, 1050, and 1350 KeV states of 73 Ge. Angular distributions for the analogue states and 1-values of the transferred protons are extracted. The results are compared with available data on the levels of 73 Ge. (author)

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

Science.gov (United States)

Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

2012-09-07

We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

Band structure analysis in SiGe nanowires

Energy Technology Data Exchange (ETDEWEB)

Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

2012-06-05

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

Band structure analysis in SiGe nanowires

International Nuclear Information System (INIS)

Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

2012-01-01

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

Nuclear energy outlook: a GE perspective

International Nuclear Information System (INIS)

Fuller, J.

2006-01-01

Full text: Full text: As one of the world's leading suppliers of power generation and energy delivery technologies, GE Energy provides comprehensive solutions for coal, oil, natural gas and nuclear energy; renewable resources such as wind, solar and biogas, along with other alternative fuels. With the ever increasing demand for energy and pressures to decrease greenhouse gas emissions, global trends indicate a move towards building more base line nuclear generation capacity. As a reliable, cost-competitive option for commercial power generation, nuclear energy also addresses many of the issues the world faces when it comes to the environment. Since developing nuclear reactor technology in the 1950s, GE's Boiling Water Reactor (BWR) technology accounts for more than 90 operating plants in the world today. Building on that success, GE's ABWR design is now the first and only Generation 111 nuclear reactor in operation today. This advanced reactor technology, coupled with current construction experience and a qualified global supply chain, make ESBWR, GE's Generation III+ reactor design, an attractive option for owners considering adding nuclear generation capacity. In pursuit of new technologies, GE has teamed with Silex to develop, commercialize and license third generation laser enrichment technology. By acquiring the exclusive rights to develop and commercialize this technology, GE is positioned to support the anticipated global demands for enriched uranium. At GE, we are continuing to develop imaginative ideas and investing in products that are cost effective, increase productivity, limit greenhouse gas emissions, and improve safety and security for our customers

In-plane g factor of low-density two-dimensional holes in a Ge quantum well.

Energy Technology Data Exchange (ETDEWEB)

Lu, Tzu-Ming [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Harris, Charles Thomas [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Huang, Shih-Hsien [National Taiwan Univ., Taipei (Taiwan); Chuang, Yen [National Taiwan Univ., Taipei (Taiwan); Li, Jiun-Yun [National Taiwan Univ., Taipei (Taiwan); Liu, CheeWee [National Taiwan Univ., Taipei (Taiwan)

2017-12-01

High-mobility two-dimensional (2D) holes residing in a Ge quantum well are a new electronic system with potentials in quantum computing and spintronics. Since for any electronic material, the effective mass and the g factor are two fundamental material parameters that determine the material response to electric and magnetic fields, measuring these two parameters in this material system is thus an important task that needs to be completed urgently. Because of the quantum confinement in the crystal growth direction (z), the biaxial strain of epitaxial Ge on SiGe, and the valance band nature, both the effective mass and the g factor can show very strong anisotropy. In particular, the in-plane g factor (g_ip) can be vanishingly small while the perpendicular g factor (g_z) can be much larger than 2. Here we report the measurement of g_ip at very low hole densities using in-plane magneto-resistance measurement performed at the NHMFL.

Strain relaxation of germanium-tin (GeSn) fins

Science.gov (United States)

Kang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia

2018-02-01

Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patterning and dry etching. The strain in the Ge1-xSnx fins having fin widths (WFin) ranging from 1 μm down to 80 nm was characterized using micro-Raman spectroscopy. Raman measurements show that the strain relaxation increases with decreasing WFin. Finite element (FE) simulation shows that the strain component in the transverse direction relaxes with decreasing WFin, while the strain component along the fin direction remains unchanged. For various Ge1-xSnx fin widths, transverse strain relaxation was further extracted using micro-Raman spectroscopy, which is consistent with the simulation results.

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

Energy Technology Data Exchange (ETDEWEB)

Wang, Dong, E-mail: wang.dong.539@m.kyushu-u.ac.jp [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Maekura, Takayuki [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Yamamoto, Keisuke; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

2016-03-01

Direct band gap (DBG) electroluminescence (EL) and photo detection were studied at room temperature for n-type bulk germanium (Ge) diodes with a fin type lateral HfGe/Ge/TiN structure. DBG EL spectra peaked at 1.55 μm were clearly observed due to small hole and electron barrier heights of HfGe/Ge and TiN/Ge contacts. DBG EL peak intensity increased with increasing doping level of Ge substrate due to increased electron population in direct conduction band. The integrated intensity of DBG EL spectrum is proportional to the area of active region, implying a good surface-uniformity of EL efficiency. Small dark current intensity was measured as 2.4 × 10{sup −7} A under a reverse bias voltage of − 1 V, corresponding to dark current densities of 5.3 × 10{sup −10} A/μm or 3.2 × 10{sup −10} A/μm{sup 2}. At the wavelength of 1.55 μm, a linear dependence of photo current intensity on laser power was observed with a responsivity of 0.44 A/W at a reverse bias voltage of − 1 V. - Highlights: • Lateral HfGe/Ge/TiN diodes were fabricated on bulk Ge substrates. • The highest temperature was 400 °C for the entire fabrication process. • Electroluminescence spectra were measured for HfGe/Ge/TiN diodes with different parameters. • Dark current densities were 5.3 × 10{sup −10} A/μm or 3.2 × 10{sup −10} A/μm{sup 2} at − 1 V. • Responsivity was 0.44 A/W, corresponding to an external quantum efficiency of 35.2%.

High-pressure structural behavior of nanocrystalline Ge

DEFF Research Database (Denmark)

Wang, H.; Liu, J. F.; Yan, H.

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi...

The first acceleration to 300 GeV

CERN Multimedia

CERN PhotoLab

1976-01-01

After the acceleration to 80 GeV in May the 200 GeV energy was attained on June 4, followed by a successful attempt to reach 300 GeV and then 400 GeV by the Council session on June 17. Here at the desk (centre) Boris Milman and Bas de Raad, (right) Pat Mills and a machine operator. Then standing on the back Jacques Althaber, Simon Van der Meer, Hans-Peter Kindermann, Raymond Rausch, John Adams, Klaus Batzner, and still back Antonio Millich, Jim Allaby, Wim Middelkoop, Bo Angerth, Hans Horisberger.

Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Science.gov (United States)

Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

2015-07-01

The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing

Energy Technology Data Exchange (ETDEWEB)

Itoh, Yuhki, E-mail: itoh.yuhki@ecei.tohoku.ac.jp; Hatakeyama, Shinji; Kawashima, Tomoyuki; Washio, Katsuyoshi

2016-03-01

Effects of carbon (C) atoms on solid-phase epitaxial growth of Ge on Si(100) have been studied. C and Ge layers were deposited on Si(100) substrates at low temperature (150–300 °C) by using solid-source molecular beam epitaxy (MBE) system and subsequently annealed at 650 °C in the MBE chamber. The surface morphology after annealing changed depending on deposited amounts of C and deposition temperature of Ge. Ge dots were formed for small amounts of C while smooth Ge films were formed by large amounts of C varying with the Ge deposition temperature. The surface morphology after annealing was also affected by the as-deposited Ge crystallinity. The change in surface morphology depending on the amounts of deposited C was considered to be affected by the formation of Ge–C bonds which relieved the misfit strain between Ge and Si. The crystallinity of Ge deteriorated with increasing C coverage due to the incorporation of insoluble C atoms in the shape of both dots and films. - Highlights: • Effects of carbon on solid-phase epitaxy of C/Ge/Si(100) were studied. • Surface morphology changed depending on C amounts and Ge deposition temperature. • Solid-phase growth of Ge changed from large dots to smooth films with C coverage. • Transition of surface morphology was affected by the formation of Ge–C bonds.

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1

International Nuclear Information System (INIS)

Yu, Shi; Qing-Qing, Sun; Lin, Dong; Han, Liu; Shi-Jin, Ding; Wei, Zhang

2009-01-01

The reaction mechanisms of Al(CH 3 ) 3 (TMA) adsorption on H-passivated GeSi(100)-2 × 1 surface are investigated with density functional theory. The Si–Ge and Ge–Ge one-dimer cluster models are employed to represent the GeSi(100)-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si–H * and Ge–H * sites is considered. The activation barrier of TMA with the Si–H * site (1.2eV) is higher than that of TMA with the Ge-H * site (0.91 eV), which indicates that the reaction proceeds more slowly on the Si-H * site than on the Ge-H * site. In addition, adsorption of TMA is more energetically favorable on the Ge–Ge dimer than on the Si–Ge dimer of H-passivated SiGe. (atomic and molecular physics)

Observation of a spin 4 neutral meson with 2 GeV mass decaying in π0π0

International Nuclear Information System (INIS)

Apel, W.D.; Augenstein, K.; Bertolucci, E.; Donskov, S.V.; Inyakin, A.V.; Kachanov, V. A.; Kittenberger, W.; Krasnokutsky, R.N.; Kruger, M.; Leder, G.

1975-01-01

The invariant mass spectrum of neutral meson states from π - p interactions at 40 GeV/c incident momentum has been investigated in a high statistics experiment performed at the 70 GeV IHEP accelerator. To detect the high energy photons coming from the produced neutral states, a hodoscope spectrometer with a computer on-line was used. A clear structure on the mass spectrum of dipions produced in the reaction π - p → π 0 π 0 n is observed at 2 GeV. The decay angular distributions show in this mass region the variation with mass typical of a state with a spin J = 4. The mass of the observed meson is found to be M (2020 +- 25) MeV and the estimate of the full width is (180 +- 50) MeV

XCOM: Photon cross sections on a personal computer

International Nuclear Information System (INIS)

Berger, M.J.; Hubbell, J.H.

1987-07-01

A computer program and data base are presented which can be used to calculate, with a personal computer, photon cross sections for scattering, photoelectric absorption and pair production, as well as total attenuation coefficients, in any element, compound or mixture, at energies from 1 keV to 100 GeV

Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

International Nuclear Information System (INIS)

Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

2012-01-01

SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

The Au modified Ge(1 1 0) surface

Science.gov (United States)

Zhang, L.; Kabanov, N. S.; Bampoulis, P.; Saletsky, A. M.; Zandvliet, H. J. W.; Klavsyuk, A. L.

2018-05-01

The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (16 × 2) and c(8 × 10) unit cells. The deposition of sub-monolayer amounts of Au and mild annealing results into de-reconstructed Ge(1 1 0) regions completely free of Ge pentagons and regions composed of nanowires that are aligned along the high symmetry [ 1 1 bar 0 ] direction of the Ge(1 1 0) surface. The de-reconstructed Ge(1 1 0) regions consist of atomic rows that are aligned along the [ 1 1 bar 0 ] direction. A substantial fraction of these substrate rows are straight and resemble the atom rows of the unreconstructed, i.e. bulk terminated, Ge(1 1 0) surface, whereas the other substrate rows have a meandering appearance. These meandering atom rows are comprised of two types of atoms, one type that appears dim, whereas the other type appears bright in filled-state scanning tunneling microscopy images. Using density functional theory calculations, we have tested more than 20 different atomic models for the meandering atom rows. The density functional theory calculations reveal that it is energetically favorable for the deposited Au atoms to exchange position with Ge atoms in the first layer. Based on these findings we conclude that the bright atoms are Ge atoms, whereas the dim atoms are Au atoms.

The 50 GeV program at SLAC

International Nuclear Information System (INIS)

Prescott, C.Y.

1994-03-01

SLAC has undertaken a modes programs to upgrade the beam energy for fixed target experiments to 50 GeV. This upgrade is possible due to the previous extensive development work on the linac accelerating gradient for the SLC, which has been operational for over five years. The SLC can deliver a beam of energy up to 60 GeV using a pulse compression technique in the rf system which trades pulse length for a higher pulse amplitude. This mode of operation has been reliable and routine for the SLC. However the beam line transport which takes electrons or positrons from the end of the linac to the target in End Station A has not been upgraded from the original design energy of 25 GeV. The 50 GeV upgrade for the fixed target experiments consists in modifying and increasing the number of beam line dipole magnets to reach 50 GeV, plus modernization of the beam line instrumentation and controls. The plans for spin structure experiments using electron beams at energies up to 50 GeV are described

The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

Science.gov (United States)

Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2014-02-24

The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

Science.gov (United States)

Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2014-01-01

The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

Directory of Open Access Journals (Sweden)

Mastura Shafinaz Zainal Abidin

2014-02-01

Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

Directory of Open Access Journals (Sweden)

Yudi Darma

2008-03-01

Full Text Available Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of annealing temperature in the range of 550-800oC has been evaluated by XPS analysis and confirms the diffusion of Ge atoms from Ge core towards the Si clad accompanied by formation of GeOx at the Si clad surface. The first subband energy at the valence band of Si dot with Ge core has been measured as an energy shift at the top of the valence band density of state using XPS. The systematic shift of the valence band maximum towards higher binding energy with progressive deposition in the dot formation indicate the charging effect of dots and SiO2 layer by photoemission during measurements.

Interplay between magnetic quantum criticality, Fermi surface and unconventional superconductivity in UCoGe, URhGe and URu2Si2

International Nuclear Information System (INIS)

Bastien, Gael

2017-01-01

This thesis is concentrated on the ferromagnetic superconductors UCoGe and URhGe and on the hidden order state in URu 2 Si 2 . In the first part the pressure temperature phase diagram of UCoGe was studied up to 10.5 GPa. Ferromagnetism vanishes at the critical pressure pc≅1 GPa. Unconventional superconductivity and non Fermi liquid behavior can be observed in a broad pressure range around pc. The superconducting upper critical field properties were explained by the suppression of the magnetic fluctuations under field. In the second part the Fermi surfaces of UCoGe and URhGe were investigated by quantum oscillations. In UCoGe four Fermi surface pockets were observed. Under magnetic field successive Lifshitz transitions of the Fermi surface have been detected. The observed Fermi surface pockets in UCoGe evolve smoothly with pressure up to 2.5 GPa and do not show any Fermi surface reconstruction at the critical pressure pc. In URhGe, three heavy Fermi surface pockets were detected by quantum oscillations. In the last part the quantum oscillation study in the hidden order state of URu 2 Si 2 shows a strong g factor anisotropy for two Fermi surface pockets, which is compared to the macroscopic g factor anisotropy extracted from the upper critical field study. (author) [fr

Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

International Nuclear Information System (INIS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.; Keyes, B. M.

2000-01-01

Minority carrier lifetimes and interface recombination velocities for GaAs grown on a Si wafer using compositionally graded GeSi buffers have been investigated as a function of GaAs buffer thickness using monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of antiphase domain disorder, with threading dislocation densities measured by etch pit density of 5x10 5 -2x10 6 cm -2 . Analysis indicates no degradation in either minority carrier lifetime or interface recombination velocity down to a GaAs buffer thickness of 0.1 μm. In fact, record high minority carrier lifetimes exceeding 10 ns have been obtained for GaAs on Si with a 0.1 μm GaAs buffer. Secondary ion mass spectroscopy reveals that cross diffusion of Ga, As, and Ge at the GaAs/Ge interface formed on the graded GeSi buffers are below detection limits in the interface region, indicating that polarity control of the GaAs/Ge interface formed on GeSi/Si substrates can be achieved. (c) 2000 American Institute of Physics

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

International Nuclear Information System (INIS)

Nie Tianxiao; Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin; Chen Zhigang; Zou Jin

2011-01-01

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

OpenAIRE

Yudi Darma

2008-01-01

Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of ...

Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

Science.gov (United States)

Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

2015-05-01

We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

International Nuclear Information System (INIS)

Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

2015-01-01

We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement

Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

Energy Technology Data Exchange (ETDEWEB)

Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Strachan, Alejandro, E-mail: strachan@purdue.edu [School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

2015-05-07

We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

GAUSS VIII: a computer program for the nuclide activity analysis of γ-ray spectra from GE semiconductor spectrometers

International Nuclear Information System (INIS)

Putman, M.H.; Helmer, R.G.; McCullagh, C.M.

1985-12-01

A description is given of a computer program, GAUSS VII, which has been written to determine nuclide or isotopic activities from γ-ray spectra from GE semiconductor spectrometers. The preliminary portion of the program can determine the energy- and width-calibration equations, locate individual peaks and define ''peak regions'' that are significantly above the local spectral background. The user may edit these lists of peaks and regions. Each peak region is fitted with one or more components in which the peaks are represented by a Gaussian function or a Gaussian with one or two additive exponential tails on the low-energy side and one on the high-energy side. A step-like background function can be used with each component. The program will automatically recycle to add one or more components to a region if needed to improve the fit. The γ-ray energies and intensities are computed from the resulting Gaussian positions and peak areas. From a comparison of these peak energies and the γ-ray energies for various nuclides in a nuclide library, the nuclides that may be present are identified. The user may edit this nuclide list. The program identifies secondary γ rays that should be present for these nuclides and obtains peak areas for them, if the areas are not already available. All of the peak areas are then analyzed to obtain the best nuclidic activities. The peak areas for any one nuclide and those for nuclides that have interfering lines are analyzed in one least-squares ft. Nuclides whose activities are essentially 0, and peaks which cannot be accounted for are removed from the analysis. Besides the nuclidic activities, a peak-by-peak summary is provided. This program is intended to analyze large groups of spectra as well as an individual spectrum

Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.

Science.gov (United States)

Rouifed, Mohamed Said; Chaisakul, Papichaya; Marris-Morini, Delphine; Frigerio, Jacopo; Isella, Giovanni; Chrastina, Daniel; Edmond, Samson; Le Roux, Xavier; Coudevylle, Jean-René; Vivien, Laurent

2012-10-01

Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.

Toepassing geïntegreerde maatregelen geïnvestariseerd

NARCIS (Netherlands)

Heijne, B.

2009-01-01

Kennis over 'good practices' en 'best practices' van geïntegreerde bedrijfsstrategieën verspreidt zich snel over Europa. Dat is één van de conclusies van een inventarisatie binnen het project Endure. Het aanplanten van minder vatbare of resistente rassen blijkt weinig toegepast te worden in de

Observation of a spin 4 neutral meson with 2 GeV mass decaying in $\\pi^{0} \\pi^{0}$

CERN Document Server

Apel, W D; Bertolucci, E.; Donskov, S.V.; Inyakin, A.V.; Kachanov, V.A.; Kittenberger, W.; Krasnokutsky, R.N.; Kruger, M.; Leder, G.; Lednev, A.A.; Mannelli, I.; Mikhailov, Yu.V.; Müller, H.; Pierazzini, G.M.; Prokoshkin, Yu.D.; Quaglia, M.; Schneider, H.; Scribano, A.; Sergiampietri, F.; Shuvalov, R.S.; Sigurdsson, G.; Steuer, M.; Vincelli, M.L.

1975-01-01

The invariant mass spectrum of neutral meson states from π−p interactions at 40 GeV/c incident momentum has been investigated in a high statistics experiment performed at the 70 GeV IHEP accelerator. To detect the high energy photons coming from the produced neutral states, a hodoscope spectrometer with a computer on-line was used. A clear structure on the mass spectrum of dipions produced in the reaction π−p→π°π°n is observed at 2 GeV. The decay angular distributions show in this mass region the variation with mass typical of a state with a spin J = 4. The mass of the observed meson is found to be M = (2020±30)MeV and the estimate of the full width is (180±60) MeV.

Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

Science.gov (United States)

Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

2016-04-01

In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

Propagation of GeV neutrinos through Earth

Science.gov (United States)

Olivas, Yaithd Daniel; Sahu, Sarira

2018-06-01

We have studied the Earth matter effect on the oscillation of upward going GeV neutrinos by taking into account the three active neutrino flavors. For neutrino energy in the range 3 to 12 GeV we observed three distinct resonant peaks for the oscillation process νe ↔νμ,τ in three distinct densities. However, according to the most realistic density profile of the Earth, the second peak at neutrino energy 6.18 GeV corresponding to the density 6.6 g/cm3 does not exist. So the resonance at this energy can not be of MSW-type. For the calculation of observed flux of these GeV neutrinos on Earth, we considered two different flux ratios at the source, the standard scenario with the flux ratio 1 : 2 : 0 and the muon damped scenario with 0 : 1 : 0. It is observed that at the detector while the standard scenario gives the observed flux ratio 1 : 1 : 1, the muon damped scenario has a different ratio. For muon damped case with Eν 20 GeV, we get the average Φνe ∼ 0 and Φνμ ≃Φντ ≃ 0.45. The upcoming PINGU will be able to shed more light on the nature of the resonance in these GeV neutrinos and hopefully will also be able to discriminate among different processes of neutrino production at the source in GeV energy range.

Origin of structural analogies and differences between the atomic structures of GeSe4 and GeS4 glasses: A first principles study.

Science.gov (United States)

Bouzid, Assil; Le Roux, Sébastien; Ori, Guido; Boero, Mauro; Massobrio, Carlo

2015-07-21

First-principles molecular dynamics simulations based on density functional theory are employed for a comparative study of structural and bonding properties of two stoichiometrically identical chalcogenide glasses, GeSe4 and GeS4. Two periodic cells of 120 and 480 atoms are adopted. Both glasses feature a coexistence of Ge-centered tetrahedra and Se(S) homopolar connections. Results obtained for N = 480 indicate substantial differences at the level of the Se(S) environment, since Ge-Se-Se connections are more frequent than the corresponding Ge-S-S ones. The presence of a more prominent first sharp diffraction peak in the total neutron structure factor of glassy GeS4 is rationalized in terms of a higher number of large size rings, accounting for extended Ge-Se correlations. Both the electronic density of states and appropriate electronic localization tools provide evidence of a higher ionic character of Ge-S bonds when compared to Ge-Se bonds. An interesting byproduct of these investigations is the occurrence of discernible size effects that affect structural motifs involving next nearest neighbor distances, when 120 or 480 atoms are used.

Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

International Nuclear Information System (INIS)

Kao, Kuo-Hsing; De Meyer, Kristin; Verhulst, Anne S.; Van de Put, Maarten; Soree, Bart; Magnus, Wim; Vandenberghe, William G.

2014-01-01

Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10 6 for V DD  = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge

Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

Energy Technology Data Exchange (ETDEWEB)

Kao, Kuo-Hsing; De Meyer, Kristin [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, Katholieke Universiteit Leuven, 3000 Leuven (Belgium); Verhulst, Anne S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Van de Put, Maarten; Soree, Bart; Magnus, Wim [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Physics, Universiteit Antwerpen, 2000 Antwerpen (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2014-01-28

Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10{sup 6} for V{sub DD} = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge.

Stress evolution of Ge nanocrystals in dielectric matrices

Science.gov (United States)

Bahariqushchi, Rahim; Raciti, Rosario; Emre Kasapoğlu, Ahmet; Gür, Emre; Sezen, Meltem; Kalay, Eren; Mirabella, Salvatore; Aydinli, A.

2018-05-01

Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.

Dimers at Ge/Si(001) surfaces: Ge coverage dependent quenching, reactivation of flip-flop motion, and interaction with dimer vacancy lines

International Nuclear Information System (INIS)

Hirayama, H.; Mizuno, H.; Yoshida, R.

2002-01-01

We studied Ge coverage (θ Ge ) dependent quenching, reactivation of the flip-flop motion, and interaction with dimer vacancy lines (DVLs) of dimers on Ge/Si(001) surfaces using a scanning tunneling microscope (STM) combined with a molecular beam epitaxy apparatus. Deposition of ∼0.3 ML (monolayer) Ge quenched the flip-flop motion, making all dimers asymmetric. Further deposition introduced DVLs at θ Ge ≥∼0.5 ML, and symmetric dimer domains appeared again locally at θ≥1.5 ML. High-resolution STM images indicated that asymmetric dimer rows always invert their phase in alternation with buckled dimer's up-end at the DVLs. Low-temperature STM images indicated that the symmetric dimer domains were due to flip-flopping of asymmetric dimers activated by large θ Ge at room temperature. The symmetric dimer domains extended along the dimer rows over the DVLs due to the phase correlation

Computer control of rf at SLAC

International Nuclear Information System (INIS)

Schwarz, H.D.

1985-03-01

The Stanford Linear Accelerator is presently upgraded for the SLAC Linear Collider project. The energy is to be increased from approximately 31 GeV to 50 GeV. Two electron beams and one positron beam are to be accelerated with high demands on the quality of the beams. The beam specifications are shown. To meet these specifications, all parameters influencing the beams have to be under tight control and continuous surveillance. This task is accomplished by a new computer system implemented at SLAC which has, among many other functions, control over rf accelerating fields. 13 refs., 8 figs., 2 tabs

SiGe HBTs Optimization for Wireless Power Amplifier Applications

Directory of Open Access Journals (Sweden)

Pierre-Marie Mans

2010-01-01

Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

P/N InP solar cells on Ge wafers

Science.gov (United States)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

Growth of Ge films by cluster beam deposition

CERN Document Server

Xu, J L; Feng, J Y

2002-01-01

Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

XAFS study of GeO sub 2 glass under pressure

CERN Document Server

Ohtaka, O; Fukui, H; Murai, K; Okube, M; Takebe, H; Katayama, Y; Utsumi, W

2002-01-01

Using a large-volume high-pressure apparatus, Li sub 2 O-4GeO sub 2 glass and pure GeO sub 2 gel have been compressed to 14 GPa at room temperature and their local structural changes have been investigated by an in situ XAFS (x-ray absorption fine-structure) method. On compression of Li sub 2 O-4GeO sub 2 glass, the Ge-O distance gradually becomes short below 7 GPa, showing the conventional compression of the GeO sub 4 tetrahedron. Abrupt increase in the Ge-O distance occurs between 8 and 10 GPa, which corresponds to the coordination number (CN) changing from 4 to 6. The CN change is completed at 10 GPa. On decompression, the reverse transition occurs gradually below 10 GPa. In contrast to the case for Li sub 2 O-4GeO sub 2 glass, the Ge-O distance in GeO sub 2 gel gradually increases over a pressure range from 2 to 12 GPa, indicating that continuous change in CN occurs. The Ge-O distance at 12 GPa is shorter than that of Li-4GeO sub 2 indicating that the change in CN is not completed even at this pressure. O...

Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

KAUST Repository

Liu, E. K.; Zhang, H. G.; Xu, G. Z.; Zhang, X. M.; Ma, R. S.; Wang, W. H.; Chen, J. L.; Zhang, H. W.; Wu, G. H.; Feng, L.; Zhang, Xixiang

2013-01-01

An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting

The 76Ge(n,p)76Ga reaction and its relevance to searches for the neutrino-less double-beta decay of 76Ge

Science.gov (United States)

Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan, Fnu

2015-10-01

The 76Ge(n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.9 keV state of 76Ge, which decays by emission of a 2040.7 keV γ ray. Using HPGe detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrino-less double-beta decay of 76Ge with its Q-value of 2039.0 keV. In the neutron energy range between 10 and 20 MeV the production cross section of the 2040.7 keV γ ray is approximately 0.1 mb. In the same experiment γ rays of energy 2037.9 keV resulting from the 76Ge(n, γ)77Ge reaction were clearly observed. Adding the 76Ge(n,n' γ)76Ge reaction, which also produces the 2040.7 keV γ ray with a cross section value of the order of 0.1 mb clearly shows that great care has to be taken to eliminate neutron-induced backgrounds in searches for neutrino-less double-beta decay of 76Ge. This work was supported by the U.S. DOE under Grant NO. DE-FG02-97ER41033.

Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

Energy Technology Data Exchange (ETDEWEB)

Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

2011-07-01

The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

Missing mass spectra in pp inelastic scattering at total energies of 23 GeV and 31 GeV

CERN Document Server

Albrow, M G; Barber, D P; Bogaerts, A; Bosnjakovic, B; Brooks, J R; Clegg, A B; Erné, F C; Gee, C N P; Locke, D H; Loebinger, F K; Murphy, P G; Rudge, A; Sens, Johannes C; Van der Veen, F

1974-01-01

Results are reported of measurements of the momentum spectra of protons emitted at small angles in inelastic reactions at the CERN ISR. The data are for total energies s/sup 1///sub 2/ of 23 GeV and 31 GeV. The structure of the peak at low values of the missing mass M (of the system recoiling against the observed proton) is studied. The missing mass distributions have the form (M/sup 2/)-/sup B(t)/ where t is the four-momentum transfer squared. B(t) drops from 0.98+or-0.06 at t=-0.15 GeV/sup 2/ to 0.20+or-0.15 at t=-1.65 GeV/sup 2/. The results are compared with a simple triple-Regge formula. (12 refs).

Some issues on the RF system in the 3 GeV Fermilab pre-booster

International Nuclear Information System (INIS)

Ng, K. Y.

1998-01-01

Some issues are presented on the rf system in the future Fermilab prebooster, which accelerates 4 bunches each containing 0.25 x 10 14 protons from 1 to 3 GeV kinetic energy. The problem of beam loading is discussed. The proposal of having a non-tunable fixed-frequency rf system is investigated. Robinson's criteria for phase stability are checked and possible Robinson instability growth is computed

GeSn-on-insulator substrate formed by direct wafer bonding

Energy Technology Data Exchange (ETDEWEB)

Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org; Yeo, Yee-Chia, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Lee, Kwang Hong; Wang, Bing [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); Bao, Shuyu [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Tan, Chuan Seng [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2016-07-11

GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge{sub 1-x}Sn{sub x} layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO{sub 2} on Ge{sub 1-x}Sn{sub x}, the bonding of the donor wafer to a second Si (001) substrate (handle wafer), and removal of the Si donor wafer. The GeSnOI material quality is investigated using high-resolution transmission electron microscopy, high-resolution X-ray diffraction (HRXRD), atomic-force microscopy, Raman spectroscopy, and spectroscopic ellipsometry. The Ge{sub 1-x}Sn{sub x} layer on GeSnOI substrate has a surface roughness of 1.90 nm, which is higher than that of the original Ge{sub 1-x}Sn{sub x} epilayer before transfer (surface roughness is 0.528 nm). The compressive strain of the Ge{sub 1-x}Sn{sub x} film in the GeSnOI is as low as 0.10% as confirmed using HRXRD and Raman spectroscopy.

Search for excited leptons at 130-140 GeV

Science.gov (United States)

Buskulic, D.; de Bonis, I.; Decamp, D.; Ghez, P.; Goy, C.; Lees, J.-P.; Lucotte, A.; Minard, M.-N.; Nief, J.-Y.; Odier, P.; Pietrzyk, B.; Casado, M. P.; Chmeissani, M.; Crespo, J. M.; Delfino, M.; Efthymiopoulos, I.; Fernandez, E.; Fernandez-Bosman, M.; Garrido, Ll.; Juste, A.; Martinez, M.; Orteu, S.; Padilla, C.; Park, I. C.; Pascual, A.; Perlas, J. A.; Riu, I.; Sanchez, F.; Teubert, F.; Colaleo, A.; Creanza, D.; de Palma, M.; Gelao, G.; Girone, M.; Iaselli, G.; Maggi, G.; Maggi, M.; Marinelli, N.; Nuzzo, S.; Ranieri, A.; Raso, G.; Ruggieri, F.; Selvaggi, G.; Silvestris, L.; Tempesta, P.; Zito, G.; Huang, X.; Lin, J.; Ouyang, Q.; Wang, T.; Xie, Y.; Xu, R.; Xue, S.; Zhang, J.; Zhang, L.; Zhao, W.; Alemany, R.; Bazarko, A. O.; Cattaneo, M.; Comas, P.; Coyle, P.; Drevermann, H.; Forty, R. W.; Frank, M.; Hagelberg, R.; Harvey, J.; Janot, P.; Jost, B.; Kneringer, E.; Knobloch, J.; Lehraus, I.; Lutters, G.; Martin, E. B.; Mato, P.; Minten, A.; Miquel, R.; Mir, Ll. M.; Moneta, L.; Oest, T.; Pacheco, A.; Pusztaszeri, J.-F.; Ranjard, F.; Rensing, P.; Rolandi, L.; Schlatter, D.; Schmelling, M.; Schmitt, M.; Schneider, O.; Tejessy, W.; Tomalin, I. R.; Venturi, A.; Wachsmuth, H.; Wagner, A.; Ajaltouni, Z.; Barrès, A.; Boyer, C.; Falvard, A.; Gay, P.; Guicheney, C.; Henrard, P.; Jousset, J.; Michel, B.; Monteil, S.; Montret, J.-C.; Pallin, D.; Perret, P.; Podlyski, F.; Proriol, J.; Rosnet, P.; Rossignol, J.-M.; Fearnley, T.; Hansen, J. B.; Hansen, J. D.; Hansen, J. R.; Hansen, P. H.; Nilsson, B. S.; Rensch, B.; Wäänänen, A.; Kyriakis, A.; Markou, C.; Simopoulou, E.; Vayaki, A.; Zachariadou, K.; Blondel, A.; Brient, J. C.; Rougé, A.; Rumpf, M.; Valassi, A.; Videau, H.; Focardi, E.; Parrini, G.; Corden, M.; Georgiopoulos, C.; Jaffe, D. E.; Antonelli, A.; Bencivenni, G.; Bologna, G.; Bossi, F.; Campana, P.; Capon, G.; Casper, D.; Chiarella, V.; Felici, G.; Laurelli, P.; Mannocchi, G.; Murtas, F.; Murtas, G. P.; Passalacqua, L.; Pepe-Altarelli, M.; Curtis, L.; Dorris, S. J.; Halley, A. W.; Knowles, I. G.; Lynch, J. G.; O'Shea, V.; Raine, C.; Reeves, P.; Scarr, J. M.; Smith, K.; Teixeira-Dias, P.; Thompson, A. S.; Thomson, F.; Thorn, S.; Turnbull, R. M.; Becker, U.; Geweniger, C.; Graefe, G.; Hanke, P.; Hansper, G.; Hepp, V.; Kluge, E. E.; Putzer, A.; Schmidt, M.; Sommer, J.; Stenzel, H.; Tittel, K.; Werner, S.; Wunsch, M.; Abbaneo, D.; Beuselinck, R.; Binnie, D. M.; Cameron, W.; Dornan, P. J.; Morawitz, P.; Moutoussi, A.; Nash, J.; Sedgbeer, J. K.; Stacey, A. M.; Williams, M. D.; Dissertori, G.; Girtler, P.; Kuhn, D.; Rudolph, G.; Betteridge, A. P.; Bowdery, C. K.; Colrain, P.; Crawford, G.; Finch, A. J.; Foster, F.; Hughes, G.; Sloan, T.; Whelan, E. P.; Williams, M. I.; Galla, A.; Greene, A. M.; Hoffmann, C.; Jacobs, K.; Kleinknecht, K.; Quast, G.; Renk, B.; Rohne, E.; Sander, H.-G.; van Gemmeren, P.; Zeitnitz, C.; Aubert, J. J.; Bencheikh, A. M.; Benchouk, C.; Bonissent, A.; Bujosa, G.; Calvet, D.; Carr, J.; Diaconu, C.; Konstantinidis, N.; Payre, P.; Rousseau, D.; Talby, M.; Sadouki, A.; Thulasidas, M.; Tilquin, A.; Trabelsi, K.; Aleppo, M.; Ragusa, F.; Bauer, C.; Berlich, R.; Blum, W.; Büscher, V.; Dietl, H.; Dydak, F.; Ganis, G.; Gotzhein, C.; Kroha, H.; Lütjens, G.; Lutz, G.; Männer, W.; Moser, H.-G.; Richter, R.; Rosado-Schlosser, A.; Schael, S.; Settles, R.; Seywerd, H.; Denis, R. St.; Stenzel, H.; Wiedenmann, W.; Wolf, G.; Boucrot, J.; Callot, O.; Cordier, A.; Davier, M.; Duflot, L.; Grivaz, J.-F.; Heusse, Ph.; Höcker, A.; Jacholkowska, A.; Jacquet, M.; Kim, D. W.; Le Diberder, F.; Lefrançois, J.; Lutz, A.-M.; Nikolic, I.; Park, H. J.; Schune, M.-H.; Simion, S.; Veillet, J.-J.; Videau, I.; Zerwas, D.; Azzurri, P.; Bagliesi, G.; Batignani, G.; Bettarini, S.; Bozzi, C.; Calderini, G.; Carpinelli, M.; Ciocci, M. A.; Ciulli, V.; Dell'Orso, R.; Fantechi, R.; Ferrante, I.; Giassi, A.; Gregorio, A.; Ligabue, F.; Lusiani, A.; Marrocchesi, P. S.; Messineo, A.; Palla, F.; Rizzo, G.; Sanguinetti, G.; Sciabà, A.; Spagnolo, P.; Steinberger, J.; Tenchini, R.; Tonelli, G.; Vannini, C.; Verdini, P. G.; Walsh, J.; Blair, G. A.; Bryant, L. M.; Cerutti, F.; Chambers, J. T.; Gao, Y.; Green, M. G.; Medcalf, T.; Perrodo, P.; Strong, J. A.; von Wimmersperg-Toeller, J. H.; Botterill, D. R.; Clifft, R. W.; Edgecock, T. R.; Haywood, S.; Maley, P.; Norton, P. R.; Thompson, J. C.; Wright, A. E.; Bloch-Devaux, B.; Colas, P.; Emery, S.; Kozanecki, W.; Lançon, E.; Lemaire, M. C.; Locci, E.; Marx, B.; Perez, P.; Rander, J.; Renardy, J.-F.; Roussarie, A.; Schuller, J.-P.; Schwindling, J.; Trabelsi, A.; Vallage, B.; Black, S. N.; Dann, J. H.; Johnson, R. P.; Kim, H. Y.; Litke, A. M.; McNeil, M. A.; Taylor, G.; Booth, C. N.; Boswell, R.; Brew, C. A. J.; Cartwright, S.; Combley, F.; Koksal, A.; Letho, M.; Newton, W. M.; Reeve, J.; Thompson, L. F.; Böhrer, A.; Brandt, S.; Cowan, G.; Grupen, C.; Saraiva, P.; Smolik, L.; Stephan, F.; Apollonio, M.; Bosisio, L.; Della Marina, R.; Giannini, G.; Gobbo, B.; Musolino, G.; Putz, J.; Rothberg, J.; Wasserbaech, S.; Williams, R. W.; Armstrong, S. R.; Elmer, P.; Feng, Z.; Ferguson, D. P. S.; Gao, Y. S.; González, S.; Grahl, J.; Greening, T. C.; Hayes, O. J.; Hu, H.; McNamara, P. A.; Nachtman, J. M.; Orejudos, W.; Pan, Y. B.; Saadi, Y.; Scott, I. J.; Walsh, A. M.; Wu, Sau Lan; Wu, X.; Yamartino, J. M.; Zheng, M.; Zobernig, G.; Aleph Collaboration

1996-02-01

A search for the radiative decay of excited charged leptons, ℓ ∗, and for radiative and weak decays of excited electron neutrinos, ν e∗, is performed, using the 5.8 pb -1 of data collected by ALEPH at 130-140 GeV. No evidence for a signal is found in single or pair production. Excluded mass limits from pair production are close to 65 GeV/ c2 for all excited lepton species. Limits on the couplings, {λ}/{m ℓ ∗}, of excited leptons are derived from single production. For an excited lepton mass of 130 GeV/ c2, these limits are 0.04 GeV -1 for μ ∗ and τ ∗, and 0.0007 GeV -1 for e ∗. For ν e∗, the limit is at the level of 0.03 GeV -1 for a mass of 120 GeV/ c2, independent of the decay branching ratios.

Background components of Ge(Li) and GeHP-detectors in the passive shield

International Nuclear Information System (INIS)

Buraeva, E.A.; Davydov, M.G.; Zorina, L.V.; Stasov, V.V.

2007-01-01

The gamma-spectrometer Ge(Li)- and the extra pure Ge-detector background components in a specially designed passive shield were subjected to investigation in the land-based laboratory in 1996-2006. The measurement time period varied from 45 up to 240 hours. The detector background is caused by the radionuclides in the shield material, in the shield cells and in the detector materials. The prominence was given to the study of the revealed time dependence of 222 Rn daughter product background including '2 10 Pb 46.5 keV peak [ru

Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

Science.gov (United States)

Yang, Zhen

Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

Effects of hydrogenation on magnetism of UNiGe

Energy Technology Data Exchange (ETDEWEB)

Adamska, A.M., E-mail: anna@mag.mff.cuni.cz [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30 059 Cracow (Poland); Havela, L. [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Prochazka, J. [Faculty of Sports and Physical Education, Charles University, Jose Martiho 31, 16252, Prague 6 (Czech Republic); Andreev, A.V. [Institute of Physics, Academy of Sciences, Na Slovance 2, 18221 Prague (Czech Republic); Skourski, Y. [Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany)

2011-12-15

U-based intermetallic compound UNiGe absorbs hydrogen up to the stoichiometry UNiGeH{sub 1.2}. In analogy to other compounds with the TiNiSi-type of structure, the structure is modified into hexagonal. The zig-zag U-chains are stretched, the U-U spacing is largely enhanced and the ordering temperature increases up to 100 K. The ordered state has a spontaneous moment, but it is unlikely to be a simple ferromagnet. - Highlights: > UNiGe exhibits a variety of magnetic properties. > Hydrogenation modifies the crystal, electronic structure, and the magnetic properties. > Upon hydrogenation, the crystal symmetry of UNiGe increases from orthorhombic to hexagonal. > Magnetic ordering temperature of UNiGe (T{sub N}=44 K) is double in the hydride, possible second phase transition.

Experience of BESIII data production with local cluster and distributed computing model

International Nuclear Information System (INIS)

Deng, Z Y; Li, W D; Liu, H M; Sun, Y Z; Zhang, X M; Lin, L; Nicholson, C; Zhemchugov, A

2012-01-01

The BES III detector is a new spectrometer which works on the upgraded high-luminosity collider, BEPCII. The BES III experiment studies physics in the tau-charm energy region from 2 GeV to 4.6 GeV . From 2009 to 2011, BEPCII has produced 106M ψ(2S) events, 225M J/ψ events, 2.8 fb −1 ψ(3770) data, and 500 pb −1 data at 4.01 GeV. All the data samples were processed successfully and many important physics results have been achieved based on these samples. Doing data production correctly and efficiently with limited CPU and storage resources is a big challenge. This paper will describe the implementation of the experiment-specific data production for BESIII in detail, including data calibration with event-level parallel computing model, data reconstruction, inclusive Monte Carlo generation, random trigger background mixing and multi-stream data skimming. Now, with the data sample increasing rapidly, there is a growing demand to move from solely using a local cluster to a more distributed computing model. A distributed computing environment is being set up and expected to go into production use in 2012. The experience of BESIII data production, both with a local cluster and with a distributed computing model, is presented here.

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

Science.gov (United States)

Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

2015-02-13

We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

Three new chalcohalides, Ba4Ge2PbS8Br2, Ba4Ge2PbSe8Br2 and Ba4Ge2SnS8Br2: Syntheses, crystal structures, band gaps, and electronic structures

International Nuclear Information System (INIS)

Lin, Zuohong; Feng, Kai; Tu, Heng; Kang, Lei; Lin, Zheshuai; Yao, Jiyong; Wu, Yicheng

2014-01-01

Highlights: • Three new chalcohalides: Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have been synthesized. • The MQ 5 Br octahedra and GeQ 4 tetrahedra form a three-dimensional framework with Ba 2+ in the channels. • Band Gaps and electronic structures of the three compounds were studied. - Abstract: Single crystals of three new chalcohalides: Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have been synthesized for the first time. These isostructural compounds crystallize in the orthorhombic space group Pnma. In the structure, the tetra-valent Ge atom is tetrahedrally coordinated with four Q (Q = S, Se) atoms, while the bi-valent M atom (M = Pb, Sn) is coordinated with an obviously distorted octahedron of five Q (Q = S, Se) atoms and one Br atom, showing the stereochemical activity of the ns 2 lone pair electron. The MQ 5 Br (M = Sn, Pb; Q = S, Se) distorted octahedra and the GeQ 4 (Q = S, Se) tetrahedra are connected to each other to form a three-dimensional framework with channels occupied by Ba 2+ cations. Based on UV–vis–NIR spectroscopy measurements and the electronic structure calculations, Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have indirect band gaps of 2.054, 1.952, and 2.066 eV respectively, which are mainly determined by the orbitals from the Ge, M and Q atoms (M = Pb, Sn; Q = S, Se)

Study of the interactionπ+p at 1.2 GeV/c π+ laboratory momentum

International Nuclear Information System (INIS)

Ladron de Guevara, P.

1973-01-01

We present the main results of a 0.33 events/urban experiment of π + interactions in hydrogen at 1.2 GeV/c, using the 80 cm Saclay bubble chamber. the partial cross sections of the different reactions and the elastic differential cross section are computed by normalizing to the total cross section obtained by other groups. (Author) 34 refs

Selective growth of Ge nanowires by low-temperature thermal evaporation.

Science.gov (United States)

Sutter, Eli; Ozturk, Birol; Sutter, Peter

2008-10-29

High-quality single-crystalline Ge nanowires with electrical properties comparable to those of bulk Ge have been synthesized by vapor-liquid-solid growth using Au growth seeds on SiO(2)/Si(100) substrates and evaporation from solid Ge powder in a low-temperature process at crucible temperatures down to 700 °C. High nanowire growth rates at these low source temperatures have been identified as being due to sublimation of GeO from substantial amounts of GeO(2) on the powder. The Ge nanowire synthesis from GeO is highly selective at our substrate temperatures (420-500 °C), i.e., occurs only on Au vapor-liquid-solid growth seeds. For growth of nanowires of 10-20 µm length on Au particles, an upper bound of 0.5 nm Ge deposition was determined in areas of bare SiO(2)/Si substrate without Au nanoparticles.

Magnetic properties of TbTiGe

International Nuclear Information System (INIS)

Prokes, K.; Tegus, O.; Brueck, E.; Gortenmulder, T.J.; Boer, F.R. de; Buschow, K.H.J.

2001-01-01

We have studied the magnetic properties of the compound TbTiGe by means of neutron diffraction in the temperature range 1.7-310 K. We also report on magnetization measurements made at different temperatures and fields. The compound TbTiGe adopts the tetragonal CeFeSi-structure type and orders antiferromagnetically at T N =286 K. The structure is collinear antiferromagnetic in the whole temperature range below T N , with the magnetic moments aligned along the tetragonal c-axis. The uncommon shape of the temperature dependence of the magnetization observed in our sample is attributed to small amounts of the ferromagnetic low-temperature modification of TbTiGe

Electronic and geometric structures of Ge{sub n}{sup -} and Ge{sub n}{sup +} (n=5-10) clusters in comparison with corresponding Si{sub n} ions

Energy Technology Data Exchange (ETDEWEB)

Li Baoxing; Cao Peilin; Song Bin; Ye Zhezhen

2003-02-10

Using full-potential linear-muffin-tin-orbital molecular-dynamics (FP-LMTO-MD) method, we have studied the geometric and electronic structures of ionic Ge{sub 5-10} clusters. Our calculations show that the ground state structures of some Ge cluster ions are different from those of their corresponding neutral Ge clusters. Furthermore, the positive Ge ions have more severe structural distortion than the negative Ge ions due to Jahn-Teller distortion. In addition, there are differences between the ground state structures of Ge ions and Si ions, although most of the Ge ions have similar geometrical configurations to their corresponding Si ions.

Dynamic aperture calculation for 100 GeV Au-Au and 250 GeV pp lattices with near third order resonance working point

International Nuclear Information System (INIS)

Gu, X.; Luo, Y.; Fischer, W.

2010-01-01

In the preparation for the 2011 RHIC 250 GeV polarized proton (pp) run, both experiment and simulation were carried out to investigate the possibility to accelerate the proton beam with a vertical tune near 2/3. It had been found experimentally in Run-9 that accelerating the proton beam with a vertical tune close to 2/3 will greatly benefit the transmission of the proton polarization. In this note, we report the calculated dynamic apertures with the 100 GeV Au run and 250 GeV proton run lattices with vertical tunes close to the third order resonance. We will compare the third order resonance band width between the beam experiment and the simulation with the 100 GeV Au lattices. And we also will compare the calculated resonance band width between the 100 GeV Au and 250 GeV proton run lattices.

The control consoles for the CERN 400 GeV proton synchrotron

CERN Document Server

Beck, F; Shering, G

1977-01-01

The European Organization for Nuclear Research (CERN) provides research facilities for investigation into the physics of high energy particles for physicists from 11 European member states and visitors from several continents. To this end it constructs and operates large accelerators, and of these is a 400 GeV proton synchrotron, which is built in a circular tunnel cut into the bedrock, the majority of the equipment being housed in a number of buildings scattered over the surface of the site. Data are gathered in local units, multiplexed into a CAMAC interface, collected into local computers, and sent down high-speed data links to the control centre. Data-collection rates vary from leisurely status changes to megahertz transfer rates on the data links. All links are connected to a message-transfer system in the control centre, as are connections from various central computers giving library, graphics and alarm facilities. The three computers driving the three control consoles are similarly attached to the mes...

Impact of nitrogen plasma passivation on the Al/n-Ge contact

Energy Technology Data Exchange (ETDEWEB)

Lai, Shumei; Mao, Danfeng [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Ruan, Yujiao [Xiamen Institute of Measurement and Testing, Xiamen, Fujian 361004 (China); Xu, Yihong; Huang, Zhiwei; Huang, Wei [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Chen, Songyan, E-mail: sychen@xmu.edu.cn [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Li, Cheng; Wang, Jianyuan [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Tang, Dingliang [College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, Fujian 361005 (China)

2016-09-15

Highlights: • A thin GeO{sub x}N{sub y} layer was formed by N{sub 2} plasma. • The principal parameters of N{sub 2} plasma treatment and additional post anneal have a great impact on the Al/n-Ge contact. • A model was proposed to explain the variation of Schottky barrier height. • The GeO{sub x}N{sub y} layer was also benefit to achieve a low leakage current density for HfO{sub 2}/Ge MOS capacitors. - Abstract: Severe Fermi level pinning at the interface of metal/n-Ge leads to the formation of a Schottky barrier. Therefore, a high contact resistance is introduced, debasing the performance of Ge devices. In this study, a Ge surface was treated by nitrogen plasma to form an ultra-thin Germanium oxynitride (GeO{sub x}N{sub y}) passivation layer. It was found that the Schottky barrier height (SBH) of metal/n-Ge contact was strongly modulated by the GeO{sub x}N{sub y} interlayer, indicating alleviation of Fermi-level pinning effect. By adjusting the principal parameters of N{sub 2} plasma treatment and additional post anneal, a Quasi-ohmic Al/n-Ge contact was achieved. Furthermore, the introduced GeO{sub x}N{sub y} layer gave extremely lower leakage current density of the gate stack for HfO{sub 2}/Ge devices. These results demonstrate that GeO{sub x}N{sub y} formed by N{sub 2} plasma would be greatly beneficial to the fabrication of the Ge-based devices.

Design and testing of the measuring equipment for the detection of 71Ge and 69Ge within the gallium-solar-neutrino experiment

International Nuclear Information System (INIS)

Huebner, M.

1980-01-01

A low level measuring system has been developed for the Ga-solar-neutrino experiment, to detect the reaction 71 Ga (νsub(e),e - ) 71 Ge by the decay 71 Ge (Tsub(1/2) = 11. 4 d, 100% electron capture). An estimate based on the solar standard model gives 15 71 Ge atoms produced by solar neutrinos (pp and pep). As a monitor for background reactions in the target, the detectability of the 69 Ga (p,n) 69 Ge reaction by the decay 69 Ge (Tsub(1/2) = 39 h, 37% β + -decay, 63% electron capture) has been considered. To test the system, the detectors are mounted in a low level laboratory lead box. (orig./WB) [de

Structure and optical properties of Ge/Si quantum dots formed by driving the evolution of Ge thin films via thermal annealing

Science.gov (United States)

Shu, Qijiang; Yang, Jie; Chi, Qingbin; Sun, Tao; Wang, Chong; Yang, Yu

2018-04-01

Ge/Si quantum dots (QDs) are fabricated by driving the transformation of a Ge thin film-deposited using the direct current (DC) magnetron sputtering technique by controlling the subsequent in situ annealing processes. The experimental results indicate that, with the increase in annealing temperature, the volume of Ge QDs increases monotonically, while the QD density initially increases then decreases. The maximal QD density can reach 1.1 × 1011 cm‑2 after a 10 min annealing at 650 °C. The Ge–Ge peak of Ge QDs obtained by Raman spectroscopy initially undergoes a blue shift and then a red shift with increasing annealing temperature. This behavior results from the competition between the dislocation and the strain relaxation in QDs. Concurrently, a series of photoelectric detectors are fabricated to evaluate the photoelectric performance of these annealed Ge QD samples. A high-photoelectricity response is demonstrated in the QD sample annealed at 650 °C. Our results pave a promising way for whole-silicon-material optical-electronic integration based on a simple and practicable fabrication method.

Electrical circuit model of ITO/AZO/Ge photodetector.

Science.gov (United States)

Patel, Malkeshkumar; Kim, Joondong

2017-10-01

In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.

Heteroepitaxial Ge-on-Si by DC magnetron sputtering

Directory of Open Access Journals (Sweden)

Martin Steglich

2013-07-01

Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Pulse shape discrimination performance of inverted coaxial Ge detectors

Science.gov (United States)

Domula, A.; Hult, M.; Kermaïdic, Y.; Marissens, G.; Schwingenheuer, B.; Wester, T.; Zuber, K.

2018-05-01

We report on the characterization of two inverted coaxial Ge detectors in the context of being employed in future 76Ge neutrinoless double beta (0 νββ) decay experiments. It is an advantage that such detectors can be produced with bigger Ge mass as compared to the planar Broad Energy Ge (BEGe) or p-type Point Contact (PPC) detectors that are currently used in the GERDA and MAJORANA DEMONSTRATOR 0 νββ decay experiments respectively. This will result in a lower background for the search of 0 νββ decay due to a reduction of detector surface to volume ratio, cables, electronics and holders which are dominating nearby radioactive sources. The measured resolution near the 76Ge Q-value at 2039 keV is 2.3 keV FWHM and their pulse-shape discrimination of background events are similar to BEGe and PPC detectors. It is concluded that this type of Ge-detector is suitable for usage in 76Ge 0 νββ decay experiments.

Large-angle production of charged pions by 3 GeV/c - 12 GeV/c protons on carbon, copper and tin targets

CERN Document Server

Catanesi, M.G.; Ellis, Malcolm; Robbins, S.; Soler, F.J.P.; Gossling, C.; Bunyatov, S.; Krasnoperov, A.; Popov, B.; Serdiouk, V.; Tereschenko, V.; Di Capua, E.; Vidal-Sitjes, G.; Artamonov, A.; Arce, P.; Giani, S.; Gilardoni, S.; Gorbunov, P.; Grant, A.; Grossheim, A.; Gruber, P.; Ivanchenko, V.; Kayis-Topaksu, A.; Panman, J.; Papadopoulos, I.; Pasternak, J.; Tcherniaev, E.; Tsukerman, I.; Veenhof, R.; Wiebusch, C.; Zucchelli, P.; Blondel, A.; Borghi, S.; Campanelli, M.; Morone, M.C.; Prior, G.; Schroeter, R.; Engel, R.; Meurer, C.; Kato, I.; Gastaldi, U.; Mills, G.B.; Graulich, J.S.; Gregoire, G.; Bonesini, M.; Ferri, F.; Paganoni, M.; Paleari, F.; Kirsanov, M.; Bagulya, A.; Grichine, V.; Polukhina, M.; Palladino, V.; Coney, L.; Schmitz, D.; Barr, G.; De Santo, A.; Pattison, C.; Zuber, K.; Bobisut, F.; Gibin, D.; Guglielmi, A.; Mezzetto, M.; Dumarchez, J.; Vannucci, F.; Dore, U.; Orestano, D.; Pastore, F.; Tonazzo, A.; Tortora, L.; Booth, C.; Buttar, C.; Hodgson, P.; howlett, L.; Bogomilov, M.; Chizhov, M.; Kolev, D.; Tsenov, R.; Piperov, Stefan; Temnikov, P.; Apollonio, M.; Chimenti, P.; Giannini, G.; Santin, G.; Burguet-Castell, J.; Cervera-Villanueva, A.; Gomez-Cadenas, J.J.; Martin-Albo, J.; Novella, P.; Sorel, M.; Tornero, A.

2008-01-01

A measurement of the double-differential $\\pi^{\\pm}$ production cross-section in proton--carbon, proton--copper and proton--tin collisions in the range of pion momentum $100 \\MeVc \\leq p < 800 \\MeVc$ and angle $0.35 \\rad \\le \\theta <2.15 \\rad$ is presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was done using a small-radius cylindrical time projection chamber (TPC) placed in a solenoidal magnet. An elaborate system of detectors in the beam line ensured the identification of the incident particles. Results are shown for the double-differential cross-sections at four incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc and 12 \\GeVc).

The distribution in transverse momentum of 5 GeV/c secondaries produced at 53 GeV in the centre of mass

CERN Document Server

Albrow, M G; Bogaerts, A; Bošnjakovič, B; Brooks, J R; Clegg, A B; Erné, F C; Gee, C N P; Kanaris, A D; Lacourt, A; Locke, D H; Loebinger, F K; Murphy, P G; Rudge, A; Sens, Johannes C; Terwilliger, K M; Van der Veen, F

1972-01-01

Data are reported on the distribution in transverse momentum of 5 GeV /c pi /sup +or-/, K/sup +or-/, p and p, produced in proton proton collisions at 53 GeV centre of mass energy at the CERN ISR. At this energy the magnitude and p/sub T/ dependence of the invariant cross- section appears to be approximately equal to that at 19 GeV accelerator energy (at the same value of the Feynman variable x), for pi /sup +or-/ and K/sup +/ in the range 0.15

GeV/c. (6 refs).

Sample Scripts for Generating PaGE-OM XML [

Lifescience Database Archive (English)

Full Text Available Sample Scripts for Generating PaGE-OM XML This page is offering some sample scripts...on MySQL. Outline chart of procedure 6. Creating RDB tables for Generating PaGE-OM XML These scripts help yo...wnload: create_tables_sql2.zip 7. Generating PaGE-OM XML from phenotype data This sample Perl script helps y

Single-shot readout of accumulation mode Si/SiGe spin qubits using RF reflectometry

Science.gov (United States)

Volk, Christian; Martins, Frederico; Malinowski, Filip; Marcus, Charles M.; Kuemmeth, Ferdinand

Spin qubits based on gate-defined quantum dots are promising systems for realizing quantum computation. Due to their low concentration of nuclear-spin-carrying isotopes, Si/SiGe heterostructures are of particular interest. While high fidelities have been reported for single-qubit and two-qubit gate operations, qubit initialization and measurement times are relatively slow. In order to develop fast read-out techniques compatible with the operation of spin qubits, we characterize double and triple quantum dots confined in undoped Si/Si0.7Ge0.3 heterostructures using accumulation and depletion gates and a nearby RF charge sensor dot. We implement a RF reflectometry technique that allows single-shot charge read-out at integration times on the order of a few μs. We show our recent advancement towards implementing spin qubits in these structures, including spin-selective single-shot read-out.

Ge nanoclusters in PECVD-deposited glass caused only by heat treatment

DEFF Research Database (Denmark)

Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

2008-01-01

This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N2 atmosphere. We studied the annealed samples...... embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth...

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Energy Technology Data Exchange (ETDEWEB)

Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

2015-03-14

The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

International Nuclear Information System (INIS)

Regan, M.J.

1993-12-01

Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous Fe x Ge 1-x and Mo x Ge 1-x are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x 2 or MoGe 3 . Finally, by manipulating the deposited power flux and rates of growth, Fe x Ge 1-x films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys

Electrical circuit model of ITO/AZO/Ge photodetector

Directory of Open Access Journals (Sweden)

Malkeshkumar Patel

2017-10-01

Full Text Available In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007 (Yun et al., 2016 [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015 [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.

Spin-polarized photoemission from SiGe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

2013-12-04

We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

Thermoelectric Performance of Na-Doped GeSe

NARCIS (Netherlands)

Shaabani, Laaya; Aminorroaya-Yamini, Sima; Byrnes, Jacob; Akbar Nezhad, Ali; Blake, Graeme R

2017-01-01

Recently, hole-doped GeSe materials have been predicted to exhibit extraordinary thermoelectric performance owing largely to extremely low thermal conductivity. However, experimental research on the thermoelectric properties of GeSe has received less attention. Here, we have synthesized

Coupling between Ge-nanocrystals and defects in SiO2

International Nuclear Information System (INIS)

Skov Jensen, J.; Franzo, G.; Leervad Petersen, T.P.; Pereira, R.; Chevallier, J.; Christian Petersen, M.; Bech Nielsen, B.; Nylandsted Larsen, A.

2006-01-01

Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO 2 films co-doped with Ge is reported. The PL signal is observed in pure SiO 2 , however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO 2 films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO 2 layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO 2 (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO 2 defect

Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

International Nuclear Information System (INIS)

Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

2012-01-01

Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

Surface reactivity of Ge[111] for organic functionalization by means of a radical-initiated reaction: A DFT study

Energy Technology Data Exchange (ETDEWEB)

Rubio-Pereda, Pamela, E-mail: rubio.pereda@gmail.com [Centro de Investigación Científica y de Educación Superior de Ensenada 3918, Código Postal 22860, Ensenada, Baja California (Mexico); Takeuchi, Noboru, E-mail: takeuchi@cnyn.unam.mx [Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Apartado Postal 14, Código Postal 22800, Ensenada, Baja California (Mexico)

2016-08-30

Highlights: • The surface reactivity of the Ge [111] surface is studied with DFT for the attachment of organic molecules by means of a radical-initiated reaction. • A hydrogen vacancy in the hydrogen terminated Ge [111] surface exhibits an accumulation of charge and electron pairing. • These characteristics make the hydrogen vacancy less reactive for the attachment of unsaturated organic molecules. • The adsorption of acetylene is probable to occur while the adsorption of ethylene and styrene is substantially less probable to occur. • The hydrogen terminated Ge [111] surface is found to be less reactive than its two-dimensional analogue, the hydrogen-terminated germanene. - Abstract: The study of interfacial chemistry at semiconductor surfaces has become an important area of research. Functionalities such as molecular recognition, biocompatibility of surfaces, and molecular computing, could be achieved by the combinations of organic chemistry with the semiconductor technology. One way to accomplish this goal is by means of organic functionalization of semiconductor surfaces such as the bulk-terminated germanium surfaces, more specifically the Ge[111]. In this work, we theoretically study, by applying density functional theory, the surface reactivity of the bulk-terminated Ge[111] surface for organic functionalization by means of a radical-initiated reaction of unsaturated molecules such as acetylene, ethylene and styrene with a hydrogen vacancy on a previously hydrogen-terminated Ge[111] surface. Results derived from this work are compared with those obtained in our previous calculations on the germanene surface, following the same chemical route. Our calculations show an accumulation of electronic charge at the H-vacancy having as a result electron pairing due to strong lattice-electron coupling and therefore a diminished surface reactivity. Calculation of the transition states for acetylene and ethylene indicates that the surface reactivity of the

Growth and evolution of nickel germanide nanostructures on Ge(001)

International Nuclear Information System (INIS)

Grzela, T; Capellini, G; Schubert, M A; Schroeder, T; Koczorowski, W; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J

2015-01-01

Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer–Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous Ni_xGe_y wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the Ni_xGe_y terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular Ni_xGe_y 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110). (paper)

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

Science.gov (United States)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

The Ho–Ni–Ge system: Isothermal section and new rare-earth nickel germanides

Energy Technology Data Exchange (ETDEWEB)

Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Faculty of Geology, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada); Pani, M.; Provino, A.; Manfrinetti, P. [Institute SPIN-CNR and Dipartimento di Chimica e Chimica Industriale, Università di Genova, Via Dodecaneso 31, 16146 Genova (Italy)

2015-05-15

The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2}CuGe{sub 6}-type), HoNiGe{sub 3} (SmNiGe{sub 3}-type), HoNi{sub 0.2÷0.6}Ge{sub 2} (CeNiSi{sub 2}-type), Ho{sub 37÷34}Ni{sub 6÷24}Ge{sub 57÷42} (AlB{sub 2}-type), HoNiGe (TiNiSi-type), Ho{sub 3}NiGe{sub 2} (La{sub 3}NiGe{sub 2}-type), the ternary system contains four new compounds: Ho{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type), HoNi{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Ho{sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) and ~Ho{sub 5}Ni{sub 2}Ge{sub 3} (unknown structure). Quasi-binary solid solutions were observed at 1070 K for Ho{sub 2}Ni{sub 17}, HoNi{sub 5}, HoNi{sub 7}, HoNi{sub 3}, HoNi{sub 2}, HoNi and Ho{sub 2}Ge{sub 3}, but no detectable solubility was found for the other binary compounds in the Ho–Ni–Ge system. Based on the magnetization measurements, the HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2} and Ho{sub 3}Ni{sub 11}Ge{sub 4} (and isostructural (Tb, Dy){sub 3}Ni{sub 11}Ge{sub 4}) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho{sub 3}Ni{sub 2}Ge{sub 3} exhibits an antiferromagnetic transition at ~7 K. Additionally, the crystal structure of the new isostructural phases (Y, Yb)Ni{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Er{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type) and (Y, Tb, Dy, Er, Tm){sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) has been also investigated. - Graphical abstract: The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at.% Ho by X-ray and microprobe analyses. Besides the eight known compounds, i.e. HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2

Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

Science.gov (United States)

Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

Poly-SiGe for MEMS-above-CMOS sensors

CERN Document Server

Gonzalez Ruiz, Pilar; Witvrouw, Ann

2014-01-01

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

Ge and As x-ray absorption fine structure spectroscopic study of homopolar bonding, chemical order, and topology in Ge-As-S chalcogenide glasses

International Nuclear Information System (INIS)

Sen, S.; Ponader, C.W.; Aitken, B.G.

2001-01-01

The coordination environments of Ge and As atoms in Ge x As y S 1-x-y glasses with x:y=1:2, 1:1, and 2.5:1 and with wide-ranging S contents have been studied with Ge and As K-edge x-ray absorption fine structure spectroscopy. The coordination numbers of Ge and As atoms are found to be 4 and 3, respectively, in all glasses. The first coordination shells of Ge and As atoms in the stoichiometric and S-excess glasses consist of S atoms only, implying the preservation of chemical order at least over the length scale of the first coordination shell. As-As homopolar bonds are found to appear at low and intermediate levels of S deficiency, whereas Ge-Ge bonds are formed only in strongly S-deficient glasses indicating clustering of metal atoms and violation of chemical order in S-deficient glasses. The composition-dependent variation in chemical order in chalcogenide glasses has been hypothesized to result in topological changes in the intermediate-range structural units. The role of such topological transitions in controlling the structure-property relationships in chalcogenide glasses is discussed

DFT study of cyanide oxidation on surface of Ge-embedded carbon nanotube

Science.gov (United States)

Gao, Wei; Milad Abrishamifar, Seyyed; Ebrahimzadeh Rajaei, Gholamreza; Razavi, Razieh; Najafi, Meysam

2018-03-01

In recent years, the discovery of suitable catalyst to oxidation of the cyanide (CN) has high importance in the industry. In present study, in the first step, the carbon nanotube (CNT) with the Ge atom embedded and the surface of Ge-CNT via the O2 molecule activated. In second step, the oxidation of CN on surface of the Ge-CNT via the Langmuir Hinshelwood (LH) and the Eley Rideal (ER) mechanisms was investigated. Results show that O2-Ge-CNT oxidized the CN molecule via the Ge-CNT-O-O∗ + CN → Ge-CNT-O-O∗-CN → Ge-CNT-O∗ + OCN and the Ge-CNT-O∗ + CN → Ge-CNT + OCN reactions. Results show that oxidation of CN on surface of Ge-CNT via the LH mechanism has lower energy barrier than ER mechanism. Finally, calculated parameters reveal that Ge-CNT is acceptable catalyst with high performance for CN oxidation, form theoretical point of view.

Vertical Ge photodetector base on InP taper waveguide

Science.gov (United States)

Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.

2018-06-01

In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

Activation and thermal stability of ultra-shallow B+-implants in Ge

International Nuclear Information System (INIS)

Yates, B. R.; Darby, B. L.; Jones, K. S.; Petersen, D. H.; Hansen, O.; Lin, R.; Nielsen, P. F.; Romano, L.; Doyle, B. L.; Kontos, A.

2012-01-01

The activation and thermal stability of ultra-shallow B + implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B + implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B + implants at 2, 4, and 6 keV to fluences ranging from 5.0 × 10 13 to 5.0 × 10 15 cm −2 was studied using micro Hall effect measurements after annealing at 400–600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 °C for 60 s was characterized by channeling analysis with a 650 keV H + beam by utilizing the 11 B(p, α)2α nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 °C.

Annealing-induced Ge/Si(100) island evolution

International Nuclear Information System (INIS)

Zhang Yangting; Drucker, Jeff

2003-01-01

Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

Search for heavy neutral and charged leptons in $e^+ e^-$ annihilation at $\\sqrt{s}$ = 161 GeV and $\\sqrt{s}$ = 172 GeV

CERN Document Server

Acciarri, M; Aguilar-Benítez, M; Ahlen, S P; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alverson, G; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Baksay, L; Banerjee, S; Banerjee, Sw; Banicz, K; Barczyk, A; Barillère, R; Barone, L; Bartalini, P; Baschirotto, A; Basile, M; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Bhattacharya, S; Biasini, M; Biland, A; Bilei, G M; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böck, R K; Böhm, A; Boldizsar, L; Borgia, B; Bourilkov, D; Bourquin, Maurice; Braccini, S; Branson, J G; Brigljevic, V; Brock, I C; Buffini, A; Buijs, A; Burger, J D; Burger, W J; Busenitz, J K; Button, A M; Cai, X D; Campanelli, M; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chang, Y H; Chaturvedi, U K; Chekanov, S V; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chéreau, X J; Chiefari, G; Chien, C Y; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Cohn, H O; Coignet, G; Colijn, A P; Colino, N; Commichau, V; Costantini, S; Cotorobai, F; de la Cruz, B; Csilling, Akos; Dai, T S; D'Alessandro, R; De Asmundis, R; Degré, A; Deiters, K; Della Volpe, D; Denes, P; De Notaristefani, F; DiBitonto, Daryl; Diemoz, M; Van Dierendonck, D N; Di Lodovico, F; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dova, M T; Duchesneau, D; Duinker, P; Durán, I; Dutta, S; Easo, S; Efremenko, Yu V; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ernenwein, J P; Extermann, Pierre; Fabre, M; Faccini, R; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, Marta; Fenyi, B; Ferguson, T; Ferroni, F; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Fisk, I; Forconi, G; Fredj, L; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gau, S S; Gentile, S; Gheordanescu, N; Giagu, S; Goldfarb, S; Goldstein, J; Gong, Z F; Gougas, Andreas; Gratta, Giorgio; Grünewald, M W; Gupta, V K; Gurtu, A; Gutay, L J; Hartmann, B; Hasan, A; Hatzifotiadou, D; Hebbeker, T; Hervé, A; Van Hoek, W C; Hofer, H; Hong, S J; Hoorani, H; Hou, S R; Hu, G; Innocente, Vincenzo; Jenkes, K; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kasser, A; Khan, R A; Kamrad, D; Kamyshkov, Yu A; Kapustinsky, J S; Karyotakis, Yu; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, D H; Kim, J K; Kim, S C; Kim, Y G; Kinnison, W W; Kirkby, A; Kirkby, D; Kirkby, Jasper; Kiss, D; Kittel, E W; Klimentov, A; König, A C; Kopp, A; Korolko, I; Koutsenko, V F; Krämer, R W; Krenz, W; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lapoint, C; Lassila-Perini, K M; Laurikainen, P; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Leiste, R; Leonardi, E; Levchenko, P M; Li Chuan; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, W; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Luminari, L; Lustermann, W; Ma Wen Gan; Maity, M; Majumder, G; Malgeri, L; Malinin, A; Maña, C; Mangeol, D J J; Mangla, S; Marchesini, P A; Marin, A; Martin, J P; Marzano, F; Massaro, G G G; McNally, D; McNeil, R R; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mi, Y; Mihul, A; Van Mil, A J W; Mirabelli, G; Mnich, J; Molnár, P; Monteleoni, B; Moore, R; Morganti, S; Moulik, T; Mount, R; Müller, S; Muheim, F; Muijs, A J M; Nahn, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Niessen, T; Nippe, A; Nisati, A; Nowak, H; Oh, Yu D; Opitz, H; Organtini, G; Ostonen, R; Palomares, C; Pandoulas, D; Paoletti, S; Paolucci, P; Park, H K; Park, I H; Pascale, G; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Peach, D; Pei, Y J; Pensotti, S; Perret-Gallix, D; Petersen, B; Petrak, S; Pevsner, A; Piccolo, D; Pieri, M; Pinto, J C; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Produit, N; Prokofev, D; Prokofiev, D O; Rahal-Callot, G; Raja, N; Rancoita, P G; Rattaggi, M; Raven, G; Razis, P A; Read, K; Ren, D; Rescigno, M; Reucroft, S; Van Rhee, T; Riemann, S; Riles, K; Robohm, A; Rodin, J; Roe, B P; Romero, L; Rosier-Lees, S; Rosselet, P; Van Rossum, W; Roth, S; Rubio, Juan Antonio; Ruschmeier, D; Rykaczewski, H; Salicio, J; Sánchez, E; Sanders, M P; Sarakinos, M E; Sarkar, S; Sassowsky, M; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schmitz, P; Scholz, N; Schopper, Herwig Franz; Schotanus, D J; Schwenke, J; Schwering, G; Sciacca, C; Sciarrino, D; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shukla, J; Shumilov, E; Shvorob, A V; Siedenburg, T; Son, D; Sopczak, André; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Stone, A; Stone, H; Stoyanov, B; Strässner, A; Strauch, K; Sudhakar, K; Sultanov, G G; Sun, L Z; Susinno, G F; Suter, H; Swain, J D; Tang, X W; Tauscher, Ludwig; Taylor, L; Ting, Samuel C C; Ting, S M; Tonutti, M; Tonwar, S C; Tóth, J; Tully, C; Tuchscherer, H; Tung, K L; Uchida, Y; Ulbricht, J; Uwer, U; Valente, E; Van de Walle, R T; Vesztergombi, G; Vetlitskii, I; Viertel, Gert M; Vivargent, M; Völkert, R; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Vorvolakos, A; Wadhwa, M; Wallraff, W; Wang, J C; Wang, X L; Wang, Z M; Weber, A; Wittgenstein, F; Wu, S X; Wynhoff, S; Xu, J; Xu, Z Z; Yang, B Z; Yang, C G; Yao, X Y; Ye, J B; Yeh, S C; You, J M; Zalite, A; Zalite, Yu; Zemp, P; Zeng, Y; Zhang, Z; Zhang, Z P; Zhou, B; Zhu, G Y; Zhu, R Y; Zichichi, Antonino; Ziegler, F

1997-01-01

A search for unstable neutral and charged heavy leptons as well as for stable charged heavy leptons has been made at center-of-mass energies $\\sqrt{s}$ = 161 GeV and $\\sqrt{s}$ = 172 GeV with the L3 detector at LEP. No evidence for their existence was found. We exclude unstable neutral leptons of Dirac (Majorana) type for masses below 78.0 (66.7), 78.0 (66.7) and 72.2 (58.2) GeV, if the heavy neutrino couples to the electron, muon or tau family, respectively. We exclude unstable charged heavy leptons for masses below 81.0 GeV for a wide mass range of the associated neutral heavy lepton. The production of stable charged heavy leptons with a mass less than 84.2 GeV is also excluded. If the unstable charged heavy lepton decays via mixing into a massless neutrino, we exclude masses below 78.7 GeV.

Polarization-sensitive second harmonic generation microscopy of α-quartz like GeO2 (α-GeO2) polycrystal

International Nuclear Information System (INIS)

Kawamura, Ibuki; Imakita, Kenji; Kitao, Akihiro; Fujii, Minoru

2014-01-01

The usefulness of polarized second harmonic generation (SHG) microscopy to determine crystallographic orientations of domains in polycrystalline films was demonstrated. Orientation of α-quartz like GeO 2 (α-GeO 2 ) domains in polycrystalline films were investigated by using polarized SHG and Raman microscopy. It was found that the SHG intensity of a α-GeO 2 polycrystalline film depends strongly on measurement points and excitation and detection polarizations, while the Raman intensity was almost uniform in the whole mapping area. Analyses of the SHG mappings in different polarization conditions allowed us to determine not only the size and shape of crystalline domains, but also the crystallographic orientations. (paper)

Applications of Si/SiGe heterostructures to CMOS devices

International Nuclear Information System (INIS)

Sidek, R.M.

1999-03-01

For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C.

Science.gov (United States)

Storozhevykh, Mikhail S; Arapkina, Larisa V; Yuryev, Vladimir A

2015-12-01

The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as a result of annealing at 600 °C. The experiment has demonstrated that the Ge/Si(001) film formed in the conditions of an isolated system consists of the standard patched wetting layer and large droplike clusters of Ge rather than of huts or domes which appear when a film is grown in a flux of Ge atoms arriving on its surface. We conclude that the growth of the pyramids appearing at temperatures greater than 600 °C is controlled by kinetics rather than thermodynamic equilibrium whereas the wetting layer is an equilibrium structure. Primary 68.37.Ef; 68.55.Ac; 68.65.Hb; 81.07.Ta; 81.16.Dn.

Operating experience with the Fermilab 500-GeV accelerator

International Nuclear Information System (INIS)

Urban, G.S.; Gannon, J.C.

1977-01-01

The Fermilab accelerator has been operating for more than four years. It has been improved so that it is now capable of operating at an energy of 500 GeV and an intensity in excess of 2.0 x 10 13 protons per pulse. The accelerator is manned on a 24 hour a day basis by an operating team of five persons. This is possible in part, because almost all of the hardware systems have status monitoring and control through an advanced computer control system. A discussion is given of the operation of the accelerator with emphasis on person to machine interface, operator training techniques used at Fermilab, and the keeping of records and reliability information

Development of high responsivity Ge:Ga photoconductors

International Nuclear Information System (INIS)

Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

1984-06-01

Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

Thermal conductivity of sputtered amorphous Ge films

International Nuclear Information System (INIS)

Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

2014-01-01

We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids

High-pressure structural behaviour of nanocrystalline Ge

International Nuclear Information System (INIS)

Wang, H; Liu, J F; He, Y; Wang, Y; Chen, W; Jiang, J Z; Olsen, J Staun; Gerward, L

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition pressure and the bulk modulus

Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface

International Nuclear Information System (INIS)

Stesmans, A.; Nguyen Hoang, T.; Afanas'ev, V. V.

2014-01-01

The hydrogen interaction kinetics of the GeP b1 defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ∼7 × 10 12  cm −2 at the SiGe/SiO 2 interfaces of condensation grown (100)Si/a-SiO 2 /Ge 0.75 Si 0.25 /a-SiO 2 structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP b1 -H formation) in molecular hydrogen (∼1 atm) and reactivation (GeP b1 -H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP b1  + H 2  → GeP b1 H + H and GeP b1 H → GeP b1  + H, which are found to be characterized by the average activation energies E f  = 1.44 ± 0.04 eV and E d  = 2.23 ± 0.04 eV, and attendant, assumedly Gaussian, spreads σE f  = 0.20 ± 0.02 eV and σE d  = 0.15 ± 0.02 eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t a  ∼ 35 min, it is found that even for the optimum treatment temperature ∼380 °C, only ∼60% of the GeP b1 system can be electrically silenced, still far remote from device grade level. This

Effect of gradual ordering of Ge/Sb atoms on chemical bonding: A proposed mechanism for the formation of crystalline Ge2Sb2Te5

Science.gov (United States)

Singh, Janpreet; Singh, Gurinder; Kaura, Aman; Tripathi, S. K.

2018-04-01

Using first principle calculations, we study the atomic arrangement and bonding mechanism in the crystalline phase of Ge2Sb2Te5 (GST). It is found that the stability of GST depends on the gradual ordering of Ge/Sb atoms. The configurations with different concentration of Ge/Sb in layers have been analyzed by the partial density of state, electron localization function and Bader charge distribution. The s and p-states of Ge atom alter with different stacking configurations but there is no change in Sb and Te atom states. Our findings show that the bonding between Ge-Te is not only responsible for the stability of GST alloy but can also predict which composition can show generic features of phase change material. As the number of Ge atoms near to vacancy layer decreases, Ge donates more charge. A growth model has been proposed for the formation of crystalline phase which justifies the structure models proposed in the literature.

Coordination Chemistry of [E(Idipp)]2+ Ligands (E = Ge, Sn): Metal Germylidyne [Cp*(CO)2W≡Ge(Idipp)]+ and Metallotetrylene [Cp*(CO)3W–E(Idipp)]+ Cations

KAUST Repository

Lebedev, Yury

2017-04-12

The synthesis and full characterization of the NHC-stabilized tungstenochlorostannylene [Cp*(CO)3W–SnCl(Idipp)] (1Sn), the NHC-stabilized chlorogermylidyne complex [Cp*(CO)2W═GeCl(Idipp)] (2), the tungsten germylidyne complex salt [Cp*(CO)2W≡Ge(Idipp)][B(C6H3-3,5-(CF3)2)4] (3), and the cationic metallostannylene [Cp*(CO)3W–Sn(Idipp)][Al(OC(CF3)3)4] (4Sn) are reported (Idipp = 2,3-dihydro-1,3-bis(2,6-diisopropylphenyl)-1H-imidazol-2-ylidene, Cp* = η5-C5Me5). Metathetical exchange of SnCl2(Idipp) with Li[Cp*W(CO)3] afforded selectively 1Sn. Photolytic decarbonylation of the Ge analogue [Cp*(CO)3W–GeCl(Idipp)] (1Ge) afforded the NHC-stabilized chlorogermylidyne complex (2), featuring a trigonal-planar coordinated germanium center and a W–Ge double bond (W–Ge 2.3496(5) Å). Chloride abstraction from 2 with Na[B(C6H3-3,5-(CF3)2)4] yielded the germylidyne complex salt 3, which contains an almost linear W–Ge–C1 linkage (angle at Ge = 168.7(1)°) and a W–Ge triple bond (2.2813(4) Å). Chloride elimination from 1Ge afforded the tungstenogermylene salt [Cp*(CO)3W–Ge(Idipp)][B(C6H3-3,5-(CF3)2)4] (4Ge), which in contrast to 1Ge could not be decarbonylated to form 3 despite the less strongly bound carbonyl ligands. The tin compounds 1Sn and 4Sn did not afford products bearing multiple W–Sn bonds. Treatment of 4Ge with Me2NC≡CNMe2 yielded unexpectedly the neutral germyl complex 5 containing a pendant 1-germabicyclo-[3,2,0]-hepta-2,5-diene ligand instead of the anticipated [2 + 1]-cycloaddition product at the Ge-center.

The 12 GeV Upgrade at Jefferson Lab

International Nuclear Information System (INIS)

Rolf Ent

2002-01-01

There has been a remarkable fruitful evolution of our picture of the behavior of strongly interacting matter during the almost two decades that have passed since the parameters of the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab were defined. These advances have revealed important new experimental questions best addressed by a CEBAF-class machine at higher energy. Fortunately, favorable technical developments coupled with foresight in the design of the facility make it feasible to triple (double) CEBAF's design (achieved) beam energy from 4 (6) GeV to 12 GeV, in a cost-effective manner: the Upgrade can be realized for about 15% of the cost of the initial facility. This Upgrade would enable the worldwide community to greatly expand its physics horizons. In addition to in general improving the figure of merit and momentum transfer range of the present Jefferson Lab physics program, raising the energy of the accelerator to 12 GeV opens up two main new areas of physics: (1) It allows direct exploration of the quark-gluon structure of hadrons and nuclei in the ''valence quark region''. It is known that inclusive electron scattering at the high momentum and energy transfers available at 12 GeV is governed by elementary interactions with quarks and, indirectly, gluons. The original CEBAF energy is not adequate to study this critical region, while with continuous 12 GeV beams one can cleanly access the entire ''valence quark region'' and exploit the newly discovered Generalized Parton Distributions. In addition, a 12-GeV Jefferson Lab can essentially complete the studies of the transition from hadronic to quark-gluon degrees of freedom. (2) It allows crossing the threshold above which the origins of quark confinement can be investigated. Specifically, 12 GeV will enable the production of certain ''exotic'' mesons. Whereas in the QCD region of asymptotic freedom ample evidence for the role of gluons exist through the observation of gluon jets

First evidence of low energy enhancement in Ge isotopes

Directory of Open Access Journals (Sweden)

Renstrøm T.

2015-01-01

Full Text Available The γ-strength functions and level densities of 73,74Ge have been extracted from particle-γ coincidence data using the Oslo method. In addition the γ-strength function of 74Ge above the neutron separation threshold, Sn = 10.196 MeV has been extracted from photoneutron measurements. When combined, these two experiments give a γ-strength function covering the energy range of ∼1-13 MeV for 74Ge. This thorough investigation of 74Ge is a part of an international campaign to study the previously reported low energy enhancement in this mass region in the γ-strength function from ∼3MeV towards lower γ energies. The obtained data show that both 73,74Ge display an increase in strength at low γ energies.

Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

Energy Technology Data Exchange (ETDEWEB)

Dong, Yi; Rehman, Habib ur; Springborg, Michael [Physical and Theoretical Chemistry, University of Saarland, 66123 Saarbrücken (Germany)

2015-01-22

The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure

International Nuclear Information System (INIS)

Chen, Wen-Hua; Liu, Chang-Hai; Li, Qin-Liang; Sun, Qi-Jun; Liu, Jie; Gao, Xu; Sun, Xuhui; Wang, Sui-Dong

2014-01-01

Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide. (paper)

Cross-correlation analysis of Ge/Li/ spectra

International Nuclear Information System (INIS)

MacDonald, R.; Robertson, A.; Kennett, T.J.; Prestwich, W.V.

1974-01-01

A sensitive technique is proposed for activation analysis using cross-correlation and improved spectral orthogonality achieved through use of a rectangular zero area digital filter. To test the accuracy and reliability of the cross-correlation procedure five spectra obtained with a Ge/Li detector were combined in different proportions. Gaussian distributed statistics were then added to the composite spectra by means of a pseudo-random number generator. The basis spectra used were 76 As, 82 Br, 72 Ga, 77 Ge, and room background. In general, when the basis spectra were combined in roughly comparable proportions the accuracy of the techique proved to be excelent (>1%). However, of primary importance was the ability of the correlation technique to identify low intensity components in the presence of high intensity components. It was found that the detection threshold for Ge, for example, was not reached until the Ge content in the unfiltered spectrum was <0.16%. (T.G.)

Chemical states and optical properties of thermally evaporated Ge-Te and Ge-Sb-Te amorphous thin films

Energy Technology Data Exchange (ETDEWEB)

Kumar, S.; Singh, D.; Shandhu, S. [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India)

2012-07-15

Thin amorphous films of Ge{sub 22}Sb{sub 22}Te{sub 56} and Ge{sub 50}Te{sub 50} have been prepared from their respective polycrystalline bulk on glass substrates by thermal evaporation technique. The amorphous nature of the films was checked with X-ray diffraction studies. Amorphous-to-crystalline transition of the films has been induced by thermal annealing and the structural phases have been identified by X-ray diffraction. The phase transformation temperature of the films was evaluated by temperature dependent sheet resistance measurement. The chemical structure of the amorphous films has been investigated using X-ray photoelectron spectroscopy and the role of Sb in phase change Ge{sub 22}Sb{sub 22}Te{sub 56} film is discussed. Survey and core level (Ge 3d, Te 3d, Te 4d, Sb 3p, Sb 3d, O 1s, C 1s) band spectra has been recorded and analyzed. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-vis-NIR spectroscopy. The optical band gap, refractive index and extinction coefficient are also presented for thermally evaporated amorphous thin films.

The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

Science.gov (United States)

Kil, Yeon-Ho; Yuk, Sim-Hoon; Jang, Han-Soo; Lee, Sang-Geul; Choi, Chel-Jong; Shim, Kyu-Hwan

2018-03-01

We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240-360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.

PECVD Tekniği ile Büyütülmüş İnce Filmlerde Oluşan Ge ve SiGe Nanokristallerin Geçirgen Elektron Mikroskobu (TEM) ,Raman ve Fotoışıma Spektroskopisi Teknikleri ile İncelenmesi

OpenAIRE

Şahin, Bünyamin; Ağan, Sedat

2009-01-01

We report an experimental study, optical properties of Ge and SiGe nanocrystals in SiOx structures are investigated by using Transmission Electron Microscopy (TEM), Raman and Photlüminescence Spectroscopy techniques. Ge nanocrystals in silicon oxide thin films have been grown with different annealing time by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The aim of our work is to determine size and size distiributions Ge, SiGe nanocrystals in SiOx martix due to annealing process...

Activation and thermal stability of ultra-shallow B+-implants in Ge

DEFF Research Database (Denmark)

Yates, B. R.; Darby, B. L.; Petersen, Dirch Hjorth

2012-01-01

The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge...... from 5.0 × 1013 to 5.0 × 1015 cm-2 was studied using micro Hall effect measurements after annealing at 400-600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed...... was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B+ implants at 2, 4, and 6 keV to fluences ranging...

O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

International Nuclear Information System (INIS)

Chaisakul, Papichaya; Marris-Morini, Delphine; Vakarin, Vladyslav; Vivien, Laurent; Frigerio, Jacopo; Chrastina, Daniel; Isella, Giovanni

2014-01-01

We report an O-band optical modulator from a Ge/Si 0.15 Ge 0.85 multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si 0.15 Ge 0.85 MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range

Software Tools for Emittance Measurement and Matching for 12 GeV CEBAF

Energy Technology Data Exchange (ETDEWEB)

Turner, Dennis L. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

2016-05-01

This paper discusses model-driven setup of the Continuous Electron Beam Accelerator Facility (CEBAF) for the 12GeV era, focusing on qsUtility. qsUtility is a set of software tools created to perform emittance measurements, analyze those measurements, and compute optics corrections based upon the measurements.qsUtility was developed as a toolset to facilitate reducing machine configuration time and reproducibility by way of an accurate accelerator model, and to provide Operations staff with tools to measure and correct machine optics with little or no assistance from optics experts.

Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices

International Nuclear Information System (INIS)

Tominaga, Junji; Kolobov, Alexander V; Fons, Paul J; Wang, Xiaomin; Saito, Yuta; Nakano, Takashi; Hase, Muneaki; Murakami, Shuichi; Herfort, Jens; Takagaki, Yukihiko

2015-01-01

Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe) 2 (Sb 2 Te 3 ) l ] m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory. (focus issue paper)

Increasing the thermoelectric power factor of Ge17Sb2Te20 by adjusting the Ge/Sb ratio

Science.gov (United States)

Williams, Jared B.; Mather, Spencer P.; Page, Alexander; Uher, Ctirad; Morelli, Donald T.

2017-07-01

We have investigated the thermoelectric properties of Ge17Sb2Te20. This compound is a known phase change material with electronic properties that depend strongly on temperature. The thermoelectric properties of this compound can be tuned by altering the stoichiometry of Ge and Sb without the use of additional foreign elements during synthesis. This tuning results in a 26% increase in the thermoelectric power factor at 723 K. Based on a single parabolic band model we show that the pristine material is optimally doped, and thus, a reduction in the lattice thermal conductivity of pure Ge17Sb2Te20 should result in an enhanced thermoelectric figure of merit.

Shower development of particles with momenta from 15 GeV to 150 GeV in the CALICE scintillator-tungsten hadronic calorimeter

CERN Document Server

Chefdeville, M.; Repond, J.; Schlereth, J.; Xia, L.; Eigen, G.; Marshall, J.S.; Thomson, M.A.; Ward, D.R.; Alipour Tehrani, N.; Apostolakis, J.; Dannheim, D.; Elsener, K.; Folger, G.; Grefe, C.; Ivantchenko, V.; Killenberg, M.; Klempt, W.; van der Kraaij, E.; Linssen, L.; Lucaci-Timoce, A.-I.; Münnich, A.; Poss, S.; Ribon, A.; Roloff, P.; Sailer, A.; Schlatter, D.; Sicking, E.; Strube, J.; Uzhinskiy, V.; Chang, S.; Khan, A.; Kim, D.H.; Kong, D.J.; Oh, Y.D.; Blazey, G.C.; Dyshkant, A.; Francis, K.; Zutshi, V.; Giraud, J.; Grondin, D.; Hostachy, J.-Y.; Brianne, E.; Cornett, U.; David, D.; Falley, G.; Gadow, K.; Göttlicher, P.; Günter, C.; Hartbrich, O.; Hermberg, B.; Irles, A.; Karstensen, S.; Krivan, F.; Krüger, K.; Kvasnicka, J.; Lu, S.; Lutz, B.; Morozov, S.; Morgunov, V.; Neubüser, C.; Provenza, A.; Reinecke, M.; Sefkow, F.; Smirnov, P.; Terwort, M.; Tran, H.L.; Vargas-Trevino, A.; Garutti, E.; Laurien, S.; Matysek, M.; Ramilli, M.; Schröder, S.; Briggl, K.; Eckert, P.; Harion, T.; Munwes, Y.; Schultz-Coulon, H. -Ch.; Shen, W.; Stamen, R.; Bilki, B.; Onel, Y.; Kawagoe, K.; Hirai, H.; Sudo, Y.; Suehara, T.; Sumida, H.; Takada, S.; Tomita, T.; Yoshioka, T.; Wing, M.; Calvo Alamillo, E.; Fouz, M. -C.; Marin, J.; Puerta-Pelayo, J.; Verdugo, A.; Bobchenko, B.; Chadeeva, M.; Danilov, M.; Markin, O.; Mizuk, R.; Novikov, E.; Rusinov, V.; Tarkovsky, E.; Kirikova, N.; Kozlov, V.; Smirnov, P.; Soloviev, Y.; Besson, D.; Buzhan, P.; Popova, E.; Gabriel, M.; Kiesling, C.; van der Kolk, N.; Seidel, K.; Simon, F.; Soldner, C.; Szalay, M.; Tesar, M.; Weuste, L.; Amjad, M.S.; Bonis, J.; Cornebise, P.; Richard, F.; Pöschl, R.; Rouëné, J.; Thiebault, A.; Anduze, M.; Balagura, V.; Boudry, V.; Brient, J-C.; Cizel, J-B.; Cornat, R.; Frotin, M.; Gastaldi, F.; Haddad, Y.; Magniette, F.; Nanni, J.; Pavy, S.; Rubio-Roy, M.; Shpak, K.; Tran, T.H.; Videau, H.; Yu, D.; Callier, S.; Conforti di Lorenzo, S.; Dulucq, F.; Fleury, J.; Martin-Chassard, G.; de la Taille, Ch.; Raux, L.; Seguin-Moreau, N.; Cvach, J.; Gallus, P.; Havranek, M.; Janata, M.; Kovalcuk, M.; Lednicky, D.; Marcisovsky, M.; Polak, I.; Popule, J.; Tomasek, L.; Tomasek, M.; Ruzicka, P.; Sicho, P.; Smolik, J.; Vrba, V.; Zalesak, J.; Ieki, S.; Kamiya, Y.; Ootani, W.; Shibata, N.; Chen, S.; Jeans, D.; Komamiya, S.; Kozakai, C.; Nakanishi, H.; Götze, M.; Sauer, J.; Weber, S.; Zeitnitz, C.

2015-12-10

We present a study of showers initiated by electrons, pions, kaons, and protons with momenta from 15 GeV to 150 GeV in the highly granular CALICE analogue scintillator-tungsten hadronic calorimeter. The data were recorded at the CERN Super Proton Synchrotron in 2011. The analysis includes measurements of the calorimeter response to each particle type as well as measurements of the energy resolution and studies of the longitudinal and radial shower development for selected particles. The results are compared to Geant4 simulations (version 9.6.p02). In the study of the energy resolution we include previously published data with beam momenta from 1 GeV to 10 GeV recorded at the CERN Proton Synchrotron in 2010.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Directory of Open Access Journals (Sweden)

Quanlong Liu

Full Text Available Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001 substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM. The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Science.gov (United States)

Liu, Quanlong; Zhao, Chunwang; Su, Shaojian; Li, Jijun; Xing, Yongming; Cheng, Buwen

2013-01-01

Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate.

Measurement of energy transitions for the decay radiations of 75Ge and 69Ge in a high purity germanium detector

Science.gov (United States)

Aydın, Güral; Usta, Metin; Oktay, Adem

2018-06-01

Photoactivation experiments have a wide range of application areas in nuclear, particle physics, and medical physics such as measuring energy levels and half-lifes of nuclei, experiments for understanding imaging methods in medicine, isotope production for patient treatment, radiation security and transportation, radiation therapy, and astrophysics processes. In this study, some energy transition values of the decay radiations of 75Ge and 69Ge, which are the products of photonuclear reactions (γ, n) with germanium isotopes (75Ge and 69Ge), were measured. The gamma spectrum as a result of atomic transitions were analysed by using a high purity semiconductor germanium detector and the energy transition values which are presented here were compared with the ones which are the best in literature. It was observed that the results presented are in agreement with literature in error range and some results have better precisions.

Natural SnGeS₃ from Radvanice near Trutnov (Czech Republic): its description, crystal structure refinement and solid solution with PbGeS₃

DEFF Research Database (Denmark)

Sejkora, Jiri; Berlepsch, Peter; Makovicky, Emil

2001-01-01

geologi, SnGeS3-PbGeS3, Radvanice, Czech Republic, chemical analysis, XRD data, crystal structure......geologi, SnGeS3-PbGeS3, Radvanice, Czech Republic, chemical analysis, XRD data, crystal structure...

Atomic structure of self-organizing iridium induced nanowires on Ge(001)

Energy Technology Data Exchange (ETDEWEB)

Kabanov, N.S., E-mail: n.kabanov@utwente.nl [Faculty of Physics, Moscow State University, 119991 (Russian Federation); Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Heimbuch, R.; Zandvliet, H.J.W. [Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Saletsky, A.M.; Klavsyuk, A.L. [Faculty of Physics, Moscow State University, 119991 (Russian Federation)

2017-05-15

Highlights: • Ir/Ge(001) structure has been studied with DFT calculations and scanning tunneling microscopy. • Ir/Ge(001) nanowires are composed of Ge atoms and Ir atoms are located in subsurface positions. • The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. - Abstract: The atomic structure of self-organizing iridium (Ir) induced nanowires on Ge(001) is studied by density functional theory (DFT) calculations and variable-temperature scanning tunneling microscopy. The Ir induced nanowires are aligned in a direction perpendicular to the Ge(001) substrate dimer rows, have a width of two atoms and are completely kink-less. Density functional theory calculations show that the Ir atoms prefer to dive into the Ge(001) substrate and push up the neighboring Ge substrate atoms. The nanowires are composed of Ge atoms and not Ir atoms as previously assumed. The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. Time-resolved scanning tunneling microscopy measurements reveal that this dynamics is caused by buckled Ge substrate dimers that flip back and forth between their two buckled configurations.

Radiation emission from wrinkled SiGe/SiGe nanostructure

Czech Academy of Sciences Publication Activity Database

Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

2010-01-01

Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

1.5 MeV Kr+ irradiation of polycrystalline Ge

International Nuclear Information System (INIS)

Wang, L.M.; Birtcher, R.C.; Rehn, L.E.

1990-01-01

This paper reports 1.5 MeV Kr + irradiation of polycrystalline Ge at room temperature, and subsequent annealing carried out with in situ TEM observations. After a Kr + dose of 1.2 x 10 14 ions/cm 2 , Ge in the electron transparent region was completely amorphized. Continuous irradiation of the amorphized Ge resulted in a high density of small cavities. These cavities, first observed after 7 x 10 14 ions/cm 2 with an average diameter of ∼3 nm, grew into large (∼50 nm) irregular-shaped holes, transforming the irradiated Ge into a sponge-like material after 8.5 x 10 15 ions/cm 2 . The crystallization temperature and the morphology of the crystallized Ge after annealing were found to be dependent on the Kr + dose. The sponge-like structure was retained after crystallization at ∼600 degrees C

Interactions between superconductivity and quantum criticality in CeCoIn5, URhGe and UCoGe

International Nuclear Information System (INIS)

Howald, L.

2011-01-01

The subject of this thesis is the analyze of the superconducting upper critical field (Hc2) and the interaction between superconductivity and quantum critical points (QCP), for the compounds CeCoIn 5 , URhGe and UCoGe. In CeCoIn 5 , study by mean of resistivity of the Fermi liquid domain allows us to localize precisely the QCP at ambient pressure. This analyze rule out the previously suggested pinning of Hc2(0) at the QCP. In a second part, the evolution of Hc2 under pressure is analyzed. The superconducting dome is unconventional in this compound with two characteristic pressures: at 1.6 GPa, the superconducting transition temperature is maximum but it is at 0.4 GPa that physical properties (maximum of Hc2(0), maximum of the initial slope dHc2/dT, maximum of the specific heat jump DC/C,... ) suggest a QCP. We explain this antagonism with pair-breaking effects in the proximity of the QCP. With these two experiments, we suggest a new phase diagram for CeCoIn 5 . In a third part, measurements of thermal conductivity on URhGe and UCoGe are presented. We obtained the bulk superconducting phase transition and confirmed the unusual curvature of the slope dHc2/dT observed by resistivity. The temperatures and fields dependence of thermal conductivity allow us to identify a non-electronic contribution for heat transport down to the lowest temperature (50 mK) and probably associated with magnon or longitudinal fluctuations. We also identified two different domains in the superconducting region, These domains are compatible with a two bands model for superconductivity. Thermopower measurements on UCoGe reveal a strong anisotropy to current direction and several anomaly under field applied in the b direction. We suggest a Lifshitz transition to explain our observations in these two compounds. (author) [fr

GeP and (Ge1−xSnx)(P1−yGey) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

International Nuclear Information System (INIS)

Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

2015-01-01

GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge 0.93(3) P 0.95(1) Sn 0.12(3) : a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder

Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

International Nuclear Information System (INIS)

Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

2006-01-01

This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%

Growth and characterization of Ge nanostructures selectively grown on patterned Si

International Nuclear Information System (INIS)

Cheng, M.H.; Ni, W.X.; Luo, G.L.; Huang, S.C.; Chang, J.J.; Lee, C.Y.

2008-01-01

By utilizing different distribution of strain fields around the edges of oxide, which are dominated by a series of sizes of oxide-patterned windows, long-range ordered self-assembly Ge nanostructures, such as nano-rings, nano-disks and nano-dots, were selectively grown by ultra high vacuum chemical vapor deposition (UHV-CVD) on Si (001) substrates. High-resolution double-crystal symmetrical ω/2θ scans and two-dimensional reciprocal space mapping (2D-RSM) technologies employing the triple axis X-ray diffractometry have been used to evaluate the quality and strain status of as-deposited as well as in-situ annealed Ge nanostructures. Furthermore, we also compare the quality and strain status of Ge epilayers grown on planar unpatterned Si substrates. It was found that the quality of all Ge epitaxial structures is improved after in-situ annealing process and the quality of Ge nano-disk structures is better than that of Ge epilayers on planar unpatterned Si substrates, because oxide sidewalls are effective dislocation sinks. We also noted that the degree of relaxation for as-deposited Ge epilayers on planar unpatterned Si substrates is less than that for as-deposited Ge nano-disk structures. After in-situ annealing process, all Ge epitaxial structures are almost at full relaxation whatever Ge epitaxial structures grew on patterned or unpatterned Si substrates

Development of 68Ge/68Ga Generator using 30 MeV Cyclotron

International Nuclear Information System (INIS)

Goo, Hur Min; Dae, Yang Seung; Hoon, Park Jeong; Dae, Park Yong; Je, Lee Eun; Bae, Kong Young; Kim, In Jong; Lee, Jin Woo; Hyun, Yu Kook

2012-05-01

The purpose of this research is to develop the 68 Ge/ 68 Ga generator where daughter nuclide 68 Ga can be eluted according to the designated periods from the resin which holds mother nuclide 68 Ge absorbed and to develop the 68 Ga utilization technology. 1. Target development for 68 Ge target and production of 68 Ge - Target designed for 68 Ge production with 30 MeV cyclotron - Target body material evaluation and proton beam irradiation 2. Separation of 68 Ge and development of column material and extraction system for 68 Ge/ 68 Ga separation - Development of 68 Ge separation method from nat Ga target - Development of absorbents for generator using stable isotope 3. Development of 68 Ga labelled radiopharmaceutical - Development of 68 Ga labelled benzamide derivative for diagnosis of melanoma - Development of 68 Ga dendrimer complex using nano-technology 4. Development of shield case for 68 Ge/ 68 Ga generator

arXiv Charged Fermions Below 100 GeV

CERN Document Server

Egana-Ugrinovic, Daniel; Ruderman, Joshua T.

2018-05-03

How light can a fermion be if it has unit electric charge? We revisit the lore that LEP robustly excludes charged fermions lighter than about 100 GeV. We review LEP chargino searches, and find them to exclude charged fermions lighter than 90 GeV, assuming a higgsino-like cross section. However, if the charged fermion couples to a new scalar, destructive interference among production channels can lower the LEP cross section by a factor of 3. In this case, we find that charged fermions as light as 75 GeV can evade LEP bounds, while remaining consistent with constraints from the LHC. As the LHC collects more data, charged fermions in the 75–100 GeV mass range serve as a target for future monojet and disappearing track searches.

The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

International Nuclear Information System (INIS)

Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

2012-01-01

Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

Effect of Si/Ge ratio on resistivity and thermopower in Gd{sub 5}Si{sub x}Ge{sub 4-x} magnetocaloric compounds

Energy Technology Data Exchange (ETDEWEB)

Raj Kumar, D.M. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.i [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Prabahar, K.; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Poddar, Asok; Ranganathan, R. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Suresh, K.G. [Indian Institute of Technology Bombay, Mumbai 400076 (India)

2011-07-15

The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd{sub 5}(Si,Ge){sub 4}-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of -8 {mu}V/K was obtained at the magneto-structural transition for the x=2 compound. - Research highlights: Effect of Si/Ge ratio on microstructure, magneto-structural transitions, resistivity ({rho}) and thermopower S(T) behaviour has been investigated in Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7, 2.0, 2.2 and 2.3. Microstructural studies reveal the presence of a Gd{sub 5}(Si,Ge){sub 4} -matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The resistivity behaviour has shown good correlation with the microstructural studies. A large change in thermopower of -8{mu}V/K was obtained at the magneto-structural transition for the x=2 compound. The resistivity and change in thermopower values were high for the alloys with Si/Ge ratio {<=}1 compared to that of the alloys with Si/Ge ratio >1.

Phase relations in the quasi-binary Cu{sub 2}GeS{sub 3}-ZnS and quasi-ternary Cu{sub 2}S-Zn(Cd)S-GeS{sub 2} systems and crystal structure of Cu{sub 2}ZnGeS{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Parasyuk, O.V. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine)]. E-mail: oleg@lab.univer.lutsk.ua; Piskach, L.V. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine); Romanyuk, Y.E. [Advanced Photonics Laboratory, Institute of Imaging and Applied Optics, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Olekseyuk, I.D. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine); Zaremba, V.I. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, 6 Kyryla and Mefodiya Str., 79005 L' viv (Ukraine); Pekhnyo, V.I. [V.I. Vernadskii Institute of General and Inorganic Chemistry, Ukrainian National Academy of Sciences, Palladina Ave 32-34, 03680 Kiev (Ukraine)

2005-07-19

The isothermal section of the Cu{sub 2}S-Zn(Cd)S-GeS{sub 2} systems at 670K was constructed using X-ray diffraction analysis. At this temperature, two quaternary intermediate phases, Cu{sub 2}CdGeS{sub 4} and {approx}Cu{sub 8}CdGeS{sub 7}, exist in the Cu{sub 2}S-CdS-GeS{sub 2} system, and only one phase, Cu{sub 2}ZnGeS{sub 4}, exists in the Cu{sub 2}S-ZnS-GeS{sub 2} system. The phase diagram of the Cu{sub 2}GeS{sub 3}-ZnS system was constructed using differential-thermal analysis and X-ray diffraction, and the existence of Cu{sub 2}ZnGeS{sub 4} has been confirmed. It forms incongruently at 1359K. Powder X-ray diffraction was used to refine the crystal structure of Cu{sub 2}ZnGeS{sub 4}, which crystallizes in the tetragonal stannite-type structure at 670K (space group I4-bar 2m, a=0.534127(9)nm, c=1.05090(2)nm, R{sub I}=0.0477). The possibility of the formation of quaternary compounds in the quasi-ternary systems A{sup I}{sub 2}X-B{sup II}X-C{sup IV}X{sub 2}, where A{sup I}-Cu, Ag; B{sup II}-Zn, Cd, Hg; C{sup IV}-Si, Ge, Sn and X-S, Se, Te is discussed.

Development of GE90 engine with largest thrust. GE90 engine no kaihatsu jokyo

Energy Technology Data Exchange (ETDEWEB)

Aono, H [Ishikawajima-Harima Heavy Industries, Co. Ltd., Tokyo (Japan)

1994-05-01

The present paper explained the turbofan engine GE90 which is being developed by General Electric Co., USA. That engine is to meet the thrust (takeoff thrust) of 300 to 530kN as required for the new-generation wide-fuselage civil transport plane which is being designed for its planned operation in the 1990's. In April, 1991, the world's strongest thrust of 480kN was achieved with engine elements also confirmed through element test. Thereafter, the engine underwent a flying test on board of Boeing 747 to materialize the planned operation in 1995. Made to be 9 in by-pass ratio and about 40 in overall pressure ratio, the GE90 was given the concept that advantage could be secured in both propulsive efficiency and thermal efficiency. That concept could be materialized by the development of composite fan blade technology and energy-efficient technology which were both demonstrated with an unducted fan. In spite of its pressure ratio of 22, the GE90's high pressure compressor demonstrates its polytropic efficiency which is equal to that of the low pressure ratio compressor. 3 refs., 19 figs., 1 tab.

Coherently Strained Si-SixGe1-x Core-Shell Nanowire Heterostructures.

Science.gov (United States)

Dillen, David C; Wen, Feng; Kim, Kyounghwan; Tutuc, Emanuel

2016-01-13

Coherently strained Si-SixGe1-x core-shell nanowire heterostructures are expected to possess a positive shell-to-core conduction band offset, allowing for quantum confinement of electrons in the Si core. We report the growth of epitaxial, coherently strained Si-SixGe1-x core-shell heterostructures through the vapor-liquid-solid mechanism for the Si core, followed in situ by the epitaxial SixGe1-x shell growth using ultrahigh vacuum chemical vapor deposition. The Raman spectra of individual nanowires reveal peaks associated with the Si-Si optical phonon mode in the Si core and the Si-Si, Si-Ge, and Ge-Ge vibrational modes of the SixGe1-x shell. The core Si-Si mode displays a clear red-shift compared to unstrained, bare Si nanowires thanks to the lattice mismatch-induced tensile strain, in agreement with calculated values using a finite-element continuum elasticity model combined with lattice dynamic theory. N-type field-effect transistors using Si-SixGe1-x core-shell nanowires as channel are demonstrated.

Morphology and chemical composition of cobalt germanide islands on Ge(001).

Science.gov (United States)

Ewert, M; Schmidt, Th; Flege, J I; Heidmann, I; Grzela, T; Klesse, W M; Foerster, M; Aballe, L; Schroeder, T; Falta, J

2016-08-12

The reactive growth of cobalt germanide on Ge(001) was investigated by means of in situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction (μ-LEED), and ex situ atomic force microscopy (AFM). At a Co deposition temperature of 670 °C, a rich morphology with different island shapes and dimensions is observed, and a correlation between island morphology and stoichiometry is found. By combining XAS-PEEM and μ-LEED, we were able to identify a large part of the islands to consist of CoGe2, with many of them having an unusual epitaxial relationship: CoGe2 [Formula: see text] [Formula: see text] Ge [Formula: see text]. Side facets with (112) and (113) orientation have been found for such islands. However, two additional phases were observed, most likely Co5Ge7 and CoGe. Comparing growth on Ge(001) single crystals and on Ge(001)/Si(001) epilayer substrates, the occurrence of these intermediate phases seems to be promoted by defects or residual strain.

Recent progress in GeSi electro-absorption modulators

International Nuclear Information System (INIS)

Chaisakul, Papichaya; Marris-Morini, Delphine; Rouifed, Mohamed-Said; Coudevylle, Jean-René; Roux, Xavier Le; Edmond, Samson; Vivien, Laurent; Frigerio, Jacopo; Chrastina, Daniel; Isella, Giovanni

2014-01-01

Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz–Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic. (review)

Thio-, selenido-, and telluridogermanates(III): K/sub 6/Ge/sub 2/S/sub 6/, K/sub 6/Ge/sub 2/Se/sub 6/, and Na/sub 6/Ge/sub 2/Te/sub 6/

Energy Technology Data Exchange (ETDEWEB)

Eisenmann, B; Kieselbach, E; Schaefer, H; Schrod, H [Technische Hochschule Darmstadt (Germany, F.R.). Fachbereich Anorganische Chemie und Kernchemie

1984-09-01

The new compounds K/sub 6/Ge/sub 2/S/sub 6/ and K/sub 6/Ge/sub 2/Se/sub 6/ crystallize in the monoclinic system, space group C2/m (No 12). The compounds are isotypic and form the K/sub 6/Si/sub 2/Te/sub 6/ structure. Na/sub 6/Ge/sub 2/Te/sub 6/ crystallizes in the K/sub 6/Sn/sub 2/Te/sub 6/ structure, monoclinic, space group P2/sub 1//c (No 14). The lattice constants are given.

Preparation and investigation of Ge-S-I glasses for infrared fiber optics

Science.gov (United States)

Velmuzhov, A. P.; Sukhanov, M. V.; Plekhovich, A. D.; Snopatin, G. E.; Churbanov, M. F.; Iskhakova, L. D.; Ermakov, R. P.; Kotereva, T. V.; Shiryaev, V. S.

2016-02-01

Glass samples of [GeSx]90I10 (x = 1.5, 1.7, 2.0, 2.3, 2.45, 2.6) compositions were prepared, and some their thermal, optical properties as well as tendency to crystallization were investigated. The compositional dependences of glass transition temperature, volume fraction of crystallized phase and activation energy of glass formation (Eg) have nonmonotonic character with a maximum for [GeS2.0]90I10 glass. Glasses of 85.8GeS2-14.2GeI4 and [GeS1.5]90I10 compositions are identified as promising for preparation of optical fiber. For the first time, Ge-S-I glass fibers were produced. Minimum optical losses in 85.8GeS2-14.2GeI4 glass fiber were 2.7 dB/m at a wavelength of 5.1 μm, and that in [GeS1.5]90I10 glass fiber were 14.5 dB/m at 5.5 μm.

Energy distributions study of spallation neutrons produced at 0 deg. by proton beams (0.8 GeV and 1.6 GeV) and deuteron beams (1.2 and 1.6 GeV)

International Nuclear Information System (INIS)

Martinez, Eugenie

1997-01-01

We are studying the energy distributions of spallation neutrons produced at 0 deg. by protons of 0.8 GeV up to 1.6 GeV and deuterons of 1.2 and 1.6 GeV with two complementary experimental techniques: the time of flight measurement with tagged incident protons for low energy neutrons (3-400 MeV) and the use of a magnetic spectrometer at high energy (E ≥ 200 MeV). These measurements enable us to measure for the first time the neutron spectra for incident energies higher than 800 MeV. We have compared the double differential cross sections produced with 1.2 GeV protons on several thin targets (Al, Fe, Zr, W, Pb and Th). The neutron production obtained for a lead target is also studied for various energies (0.8 up to 1.6 GeV) and incident particles (p, d). Data are compared with theoretical simulations carried out using the TIERCE system and the intranuclear cascade model of J. Cugnon associated to the decay code of D. Durand. The neutron spectra calculated by using the HETC and MCNP codes, included in TIERCE, are significantly higher than the measured distributions. A better agreement is observed with the results of the Cugnon's cascade model. (author) [fr

Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

KAUST Repository

Liu, E. K.

2013-03-28

An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases. In the window, a first-order magnetostructural transition between paramagnetic austenite and ferromagnetic martensite occurs with a sharp jump in magnetization, showing a magnetic entropy change as large as −40 J kg−1 K−1 in a 50 kOe field change. This giant magnetocaloric effect enables Mn1− x Co x NiGe to become a potential magnetic refrigerant.

Nuclear interactions for 15 GeV/c protons and pions under random and channeling conditions in germanium single crystals

CERN Document Server

Andersen, S K; Fich, O.; Golovchenko, J.A.; Nielsen, Henry; Schiott, H.E.; Uggerhoj, E.; Vraast-Thomsen, C.; Charpak, Georges; Petersen, G.; Sauli, F.; Ponpon, J.P.; Siffert, P.

1978-01-01

Strong directional effects for nuclear-reaction probabilities have been observed when 15 GeV/ c protons and pions are incident on a 4.2 mm Ge single crystal. In the random situation, our measurements are in agreement with Glauber's theory of diffraction scattering and with published particle-production data. When protons are incident in an aligned direction, the nuclear-reaction probabilities fall off very drastically but in a way which is in agreement with standard channeling theory; for aligned negative pions where a simple channeling theory is lacking, there is some experimental indication that nuclear-reaction probabilities are enhanced compared to the corresponding random rates, an indication which is supported by detailed computer-simulation studies.

Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

Science.gov (United States)

Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGe y/strained-Si heterostructure grown on a relaxed Si1-xGe x buffer

International Nuclear Information System (INIS)

Gupta, Saurabh; Lee, Minjoo L.; Isaacson, David M.; Fitzgerald, Eugene A.

2005-01-01

A dual channel heterostructure consisting of strained-Si/strained-Si 1-y Ge y on relaxed Si 1-x Ge x (y > x), provides a platform for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) with high hole mobilities (μ eff ) which depend directly on Ge concentration and strain in the strained-Si 1-y Ge y layer. Ge out-diffuses from the strained-Si 1-y Ge y layer into relaxed Si 1-x Ge x during high temperature processing, reducing peak Ge concentration and strain in the strained-Si 1-y Ge y layer and degrades hole μ eff in these dual channel heterostructures. A heterostructure consisting of strained-Si/strained-Si 1-y Ge y /strained-Si, referred to as a trilayer heterostructure, grown on relaxed Si 1-x Ge x has much reduced Ge out-flux from the strained-Si 1-y Ge y layer and retains higher μ eff after thermal processing. Improved hole μ eff over similar dual channel heterostructures is also observed in this heterostructure. This could be a result of preventing the hole wavefunction tunneling into the low μ eff relaxed Si 1-x Ge x layer due to the additional valence band offset provided by the underlying strained-Si layer. A diffusion coefficient has been formulated and implemented in a finite difference scheme for predicting the thermal budget of the strained SiGe heterostructures. It shows that the trilayer heterostructures have superior thermal budgets at higher Ge concentrations. Ring-shaped MOSFETs were fabricated on both platforms and subjected to various processing temperatures in order to compare the extent of μ eff reduction with thermal budget. Hole μ eff enhancements are retained to a much higher extent in a trilayer heterostructure after high temperature processing as compared to a dual channel heterostructure. The improved thermal stability and hole μ eff of a trilayer heterostructure makes it an ideal platform for fabricating high μ eff MOSFETs that can be processed over higher temperatures without significant losses in hole �

Electrical and magnetic transport properties of DyTiGe

International Nuclear Information System (INIS)

Dagula, W.; Tegus, O.; Li, X.W.; Zhang, L.; Brueck, E.; Boer, F.R. de; Buschow, K.H.J.

2004-01-01

Electrical resistivity and magnetoresistance of DyTiGe were investigated as a function of temperature and magnetic field. DyTiGe is an antiferromagnet with Neel temperature, T N , of 180 K. The electrical resistivity has an anomaly around T N . Below T N , the magnetoresistance of DyTiGe abruptly changes at a critical field. At 5 K, we observe a magnetoresistance reduction of about 20%

Structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} and ZnGeN{sub 2}:Mn{sup 2+} for field emission displays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Q.-H. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Guangzhou Research Institute of Non-ferrous Metals, Guangzhou, Guangdong 510651 (China); Wang, J., E-mail: ceswj@mail.sysu.edu.cn [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Yeh, C.-W.; Ke, W.-C.; Liu, R.-S. [Department of Chemistry, National Taiwan University, Taipei 106, Taiwan (China); Tang, J.-K. [Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071 (United States); Xie, M.-B.; Liang, H.-B.; Su, Q. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)

2010-12-15

Yellowish-orange-emitting ZnGeN{sub 2} and orange-red-emitting ZnGeN{sub 2}:Mn were synthesized by a facile and mild gas-reduction-nitridation reaction at 1153 K under NH{sub 3} flow with air-stable raw materials ZnO, GeO{sub 2} and MnCO{sub 3}. The structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} doped with or without Mn{sup 2+} were systematically investigated. Rietveld refinements show that the as-synthesized samples are obtained as single-phase compounds and crystallize as an orthorhombic structure with a space group of Pna2{sub 1}. The actual chemical composition of the as-prepared ZnGeN{sub 2} determined by energy dispersive X-ray spectroscopy suggests that the Ge vacancy defects probably exist in the host. The SEM image reveals that the Zn{sub 0.99}Mn{sub 0.01}GeN{sub 2} particles form aggregates {approx}500-600 nm in size. The diffuse reflection spectrum and photoluminescence excitation spectrum confirm that the band edge absorption of ZnGeN{sub 2} at low energy is 3.3 eV ({approx}376 nm). Upon UV light excitation and electron beam excitation, ZnGeN{sub 2} gives an intense yellowish-orange emission around 580-600 nm, associated with a deep defect level due to the Ge vacancy defects, and ZnGeN{sub 2}:Mn shows an intense red emission at 610 nm due to the {sup 4}T{sub 1g}({sup 4}G) {yields} 6A{sub 1g}({sup 6}S) of Mn{sup 2+}. The unusual red emission of Mn{sup 2+} in tetrahedral Zn{sup 2+} sites is attributed to the strong nephelauxetic effect between Mn{sup 2+} and the surrounding tetrahedrally coordinated nitrogen. The photoluminescence and cathodoluminescence emission colors of ZnGeN{sub 2}:Mn have a high color purity of {approx}93-98%. These results demonstrate that ZnGeN{sub 2}:Mn is a novel, promising red-emitting nitride, potentially applicable to field emission displays with brilliant color-rendering properties and a large color gamut.

Extension of the GeN-Foam neutronic solver to SP3 analysis and application to the CROCUS experimental reactor

International Nuclear Information System (INIS)

Fiorina, Carlo; Hursin, Mathieu; Pautz, Andreas

2017-01-01

Highlights: • Development and verification of an SP 3 solver based on OpenFOAM. • Integration into the GeN-Foam multi-physics platform. • Application of the new GeN-Foam SP 3 solver to the CROCUS reactor. - Abstract: The Laboratory for Reactor Physics and Systems Behaviour at the PSI and at the EPFL has been developing since 2013 a multi-physics platform for coupled reactor analysis named GeN-Foam. The developed tool includes a solver for the eigenvalue and transient solution of multi-group neutron diffusion equations. Although frequently used in reactor analysis, the diffusion theory shows some limitations for core configurations involving strong anisotropies, which is the case for the CROCUS research reactor at the EPFL. The use of an SP 3 approximation to neutron transport can often lead to visible improvements in a code predictive capabilities, especially for one-directional anisotropies, with acceptable added computational cost vs diffusion. Following some modelling issues for the CROCUS reactor, and in order to improve the GeN-Foam modelling capabilities, the GeN-Foam diffusion solver has been extended to allow for SP 3 analyses. The present paper describes such extension and a preliminary verification using a mini-core PWR benchmark. The newly developed solver is then applied to the analysis of the CROCUS experimental reactor and results are compared to Monte Carlo calculations, as well as to the results of the diffusion solver.

SiGe derivatization by spontaneous reduction of aryl diazonium salts

Science.gov (United States)

Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

2013-10-01

Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.

Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

Science.gov (United States)

Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

2015-11-16

Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

International Nuclear Information System (INIS)

Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

2016-01-01

The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

International Nuclear Information System (INIS)

Takagi, Shinichi; Tezuka, T.; Irisawa, T.; Nakaharai, S.; Maeda, T.; Numata, T.; Ikeda, K.; Sugiyama, N.

2006-01-01

Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on high hole mobility p-MOSFETs using global/local SiGe or Ge channels. There are two directions for introducing SiGe or Ge channels into Si CMOS platform. One is to use SiGe or Ge global substrates and the other is to form SiGe or Ge-channel regions locally on Si wafers. In both cases, the Ge condensation technique, where Ge-channel layers are formed by oxidizing SiGe films on SOI substrates, are effectively utilized. As for the global technologies, ultrathin GOI substrates are prepared and used to fabricate high mobility GOI p-MOSFETs. As for the local technologies, SGOI or GOI channels are formed locally in the active area of p-MOSFETs on SOI wafers. It is shown that the hole mobility enhancement factor of as high as 10 is obtained in locally fabricated p-MOSFETs through the effects of high-Ge content and the compressive strain. Furthermore, the local Ge-channel technologies are combined with global SiGe or Ge substrates for pursuing the optimal and individual design of n-MOSFETs and p-MOSFETs on a single Si wafer. The CMOS device composed of strained-Si n-MOSFETs and SGOI p-MOSFETs is successfully integrated on a same wafer, which is a promising CMOS structure under deep sub 100 nm technology nodes

Structural stability, electronic and magnetic behaviour of spin-polarized YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) Heusler alloys

Energy Technology Data Exchange (ETDEWEB)

Rasool, Muhammad Nasir, E-mail: nasir4iub@gmail.com [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100 (Pakistan); Hussain, Altaf, E-mail: altafiub@yahoo.com [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100 (Pakistan); Javed, Athar [Department of Physics, University of the Punjab, Lahore, 54590 (Pakistan); Khan, Muhammad Azhar; Iqbal, F. [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100 (Pakistan)

2016-11-01

The structural stability, electronic and magnetic behaviour of YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) Heusler alloys have been studied by first principle approach. Generalized gradient approximation (GGA) based on density functional theory (DFT) has been applied to investigate the properties of quaternary Heusler alloys. The YCoVSi, YCoVGe, YCoTiSi and YCoTiGe Heusler alloys of Type-3 structure are found to be stable in spin-polarized/magnetic phase. The YCoVSi and YCoVGe alloys exhibit nearly spin gapless semiconductor (SGS) behaviour while YCoTiSi and YCoTiGe alloys show half-metallic ferromagnetic (HMF) behaviour. For YCoVSi, YCoVGe, YCoTiSi and YCoTiGe alloys, the calculated energy band gaps in spin down (↓) channel are 0.60, 0.54, 0.68 and 0.44 eV, respectively. The YCoVZ and YCoTiZ alloys are found to have integral value of total magnetic moment (M{sub T}), thus obeying the Slater-Pauling rule, M{sub T} = (N{sub v}–18)μ{sub B}. - Highlights: • Four Heusler alloys i.e. YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) are studied. • Type-3 crystal structure of all four alloys is stable in magnetic phase. • The compressibility (S) follows the order: S{sub YCoVSi} > S{sub YCoTiSi} > S{sub YCoVGe} > S{sub YCoTiGe}. • Half metallic ferromagnetic behaviour is observed in all four alloys. • All four alloys obey the Slater-Pauling rule, M{sub T} = (N{sub v} – 18)μ{sub B}.

Structural study of Ge/GaAs thin films

International Nuclear Information System (INIS)

Lazarov, V K; Lari, L; Lytvyn, P M; Kholevchuk, V V; Mitin, V F

2012-01-01

Ge/GaAs heterostructure research is largely motivated by the application of this material in solar cells, metal-oxide-semiconductor field-effect transistors, mm-wave mixer diodes, temperature sensors and photodetectors. Therefore, understanding of how the properties of Ge/GaAs heterostructure depend on its preparation (growth) is of importance for various high-efficiency devices. In this work, by using thermal Ge evaporation on GaAs(100), we studied structural properties of these films as a function of the deposition rate. Film grains size and morphology show strong dependence of the deposition rate. Low deposition rates results in films with large crystal grains and rough surface. At high deposition rates films become flatter and their crystal grains size decreases, while at very high deposition rates films become amorphous. Cross-sectional TEM of the films show that the Ge films are granular single crystal epitaxially grown on GaAs. The Ge/GaAs interface is atomically abrupt and free from misfit dislocations. Stacking faults along the [111] directions that originate at the interface were also observed. Finally by using the Kelvin probe microscopy we show that work function changes are related to the grain structure of the film.

Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

Science.gov (United States)

Baira, Mourad; Salem, Bassem; Madhar, Niyaz Ahamad; Ilahi, Bouraoui

2018-05-01

In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in D- and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in D-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions.

Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

Science.gov (United States)

Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

2017-11-01

A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

Growth strategies to control tapering in Ge nanowires

Directory of Open Access Journals (Sweden)

P. Periwal

2014-04-01

Full Text Available We report the effect of PH3 on the morphology of Au catalyzed Ge nanowires (NWs. Ge NWs were grown on Si (111 substrate at 400 °C in the presence of PH3, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH3/GeH4 ratio causes passivation at NW surface. At high PH3 concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH3 flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH3-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

P-barp and pp elastic scattering from 10 GeV to 1000 GeV centre-of-mass energy

International Nuclear Information System (INIS)

Islam, M.M.; Fearnley, T.; Guillaud, J.P.

1984-01-01

Antiproton-proton and proton-proton elastic scattering are studied simultaneously over the energy range √s approx. (10-1000) GeV in a nucleon valence core model proposed earlier. The scattering is described as primarily due to two processes: diffraction and hard scattering. The latter originates from the scattering of a nucleon core off another core. Destructive interference between the two processes produces dips in p-barp and pp differential cross-sections. As energy increases beyond the ISR range (√s = (23-62) GeV), the dips get filled up, and eventually transform into shoulders or breaks at collider energies. Differences between p-barp and pp differential cross-sections persist even at collider energies. Comparison with ISR data shows that the model provides a quantitative description of pp elastic scattering in this energy range. Predictions of p-barp and pp differential cross-sections at future collider energies √s = 800 and 2000 GeV are given. In order to distinguish between competing models, need for measuring the p-barp differential cross-section at the ISR and SPS collider in the abs (t)-range (0.5-2.0) (GeV) 2 is stressed

anti pp and pp elastic scattering from 10 GeV to 1000 GeV centre-of-mass energy

Energy Technology Data Exchange (ETDEWEB)

Islam, M.M. (Connecticut Univ., Storrs (USA). Dept. of Physics); Fearnley, T. (University Coll., London (UK). Dept. of Physics and Astronomy); Guillaud, J.P. (Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules)

1984-06-21

Antiproton-proton and proton-proton elastic scattering are studied simultaneously over the energy range ..sqrt..anti s approx.= (10/1000) GeV in a nucleon valence core model proposed earlier. The scattering is described as primarily due to two processes: diffraction and hard scattering. The latter originates from the scattering of a nucleon core off another core. Destructive interference between the two processes produces dips in anti pp and pp differential cross-sections. As energy increases beyond the ISR range (..sqrt..anti s = (23/62) GeV), the dips get filled up, and eventually transform into shoulders or breaks at collider energies. Differences between anti pp and pp differential cross-sections persist even at collider energies. Comparison with ISR data shows that the model provides a quantitative description of pp elastic scattering in this energy range. Predictions of anti pp and pp differential cross-sections at future collider energies ..sqrt..s = 800 and 2000 GeV are given. In order to distinguish between competing models, need for measuring the anti pp differential cross-section at the ISR and SPS collider in the vertical stroketvertical stroke-range (0.5/2.0) (GeV)/sup 2/ is stressed.

P-barp and pp elastic scattering from 10 GeV to 1000 GeV centre-of-mass energy

Energy Technology Data Exchange (ETDEWEB)

Islam, M.M. (Connecticut Univ., Storrs (USA). Dept. of Physics); Fearnley, T. (University Coll., London (UK). Dept. of Physics and Astronomy); Guillaud, J.P. (L.A.P.P. - BP909, 74019 Annecy-Le-Vieux Cedex, France)

1984-06-21

Antiproton-proton and proton-proton elastic scattering are studied simultaneously over the energy range ..sqrt..s approx. (10-1000) GeV in a nucleon valence core model proposed earlier. The scattering is described as primarily due to two processes: diffraction and hard scattering. The latter originates from the scattering of a nucleon core off another core. Destructive interference between the two processes produces dips in p-barp and pp differential cross-sections. As energy increases beyond the ISR range (..sqrt..s = (23-62) GeV), the dips get filled up, and eventually transform into shoulders or breaks at collider energies. Differences between p-barp and pp differential cross-sections persist even at collider energies. Comparison with ISR data shows that the model provides a quantitative description of pp elastic scattering in this energy range. Predictions of p-barp and pp differential cross-sections at future collider energies ..sqrt..s = 800 and 2000 GeV are given. In order to distinguish between competing models, need for measuring the p-barp differential cross-section at the ISR and SPS collider in the abs (t)-range (0.5-2.0) (GeV)/sup 2/ is stressed.

Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

Science.gov (United States)

Lu, Bin; Cheng, Xiaomin; Feng, Jinlong; Guan, Xiawei; Miao, Xiangshui

2016-07-01

Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.

Uniaxial ferromagnetism of local uranium moments in hexagonal UBeGe

Science.gov (United States)

Gumeniuk, Roman; Yaresko, Alexander N.; Schnelle, Walter; Nicklas, Michael; Kvashnina, Kristina O.; Hennig, Christoph; Grin, Yuri; Leithe-Jasper, Andreas

2018-05-01

The new intermetallic uranium beryllium germanide UBeGe and its thorium analogon ThBeGe crystallize with the hexagonal ZrBeSi type of structure. Studies of magnetic, thermal, and transport properties were performed on polycrystalline samples between 1.8 and 750K. UBeGe is a uniaxial ferromagnet and there are indications for two magnetic transitions at TC(1 )≈160 K and TC(2 )≈150 K . The high paramagnetic effective moment μeff≈3.1 μB , x-ray absorption near-edge spectroscopy (XANES, 17-300 K), as well as theoretical DFT calculations indicate localized U 5 f2 states in UBeGe. ThBeGe is a diamagnetic metallic material with low density of states at the Fermi level.

Innovative Ge Quantum Dot Functional Sensing and Metrology Devices

Science.gov (United States)

2017-08-21

Sensing/Metrology Devices Period: May 26th 2015May 25th 2017 Investigators: Pei-Wen Li Affiliation: Department of Electrical Engineering , National...light sources as well as low-power, high-speed Ge photodetectors indeed requires the growth of direct-gap Ge, heterostructure engineering for...All these tasks cannot be simply conducted in terms of bulk Ge technology, and it is no doubt that nanoscience and nanotechnology would offer

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy

International Nuclear Information System (INIS)

Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Terziotti, Daniela; Bonera, Emiliano; Spinella, Corrado; Nicotra, Giuseppe

2012-01-01

The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe. (paper)

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

Science.gov (United States)

Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Terziotti, Daniela; Bonera, Emiliano; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Spinella, Corrado; Nicotra, Giuseppe

2012-02-03

The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe.

Atomic-scale structure of GeSe2 glass revisited: a continuous or broken network of Ge-(Se1/2)4 tetrahedra?

International Nuclear Information System (INIS)

Petkov, V; Le Messurier, D

2010-01-01

The atomic-scale structure of germanium diselenide (GeSe 2 ) glass has been revisited using a combination of high-energy x-ray diffraction and constrained reverse Monte Carlo simulations. The study shows that the glass structure may be very well described in terms of a continuous network of corner- and edge-sharing Ge-Se 4 tetrahedra. The result is in contrast to other recent studies asserting that the chemical order and, hence, network integrity in GeSe 2 glass are intrinsically broken. It is suggested that more elaborate studies are necessary to resolve the controversy.

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

2016-07-15

Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

Science.gov (United States)

2015-10-09

and conclusions The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8...Abstract The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8, SnD4. The...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si -compatible materials and devices in the Si - Ge -Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

OpenAIRE

Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

2016-01-01

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

High-Temperature Heat Capacity of Germanates Pr2Ge2O7 and Nd2Ge2O7 within 350-1000 K

Science.gov (United States)

Denisova, L. T.; Irtyugo, L. A.; Beletskii, V. V.; Belousova, N. V.; Denisov, V. M.

2018-03-01

Pr2Ge2O7 and Nd2Ge2O7 were obtained via solid-phase synthesis from Pr2O3 ( Nd2O3) and GeO2 with multistage firing in air within 1273-1473 K. A temperature effect on molar heat capacity of the oxide compounds was measured with a differential scanning calorimetry. Their thermodynamic properties were calculated from the C P = f( T) dependences.

Effect of pressure on magnetism of UIrGe

International Nuclear Information System (INIS)

Pospíšil, Jiří; Haga, Yoshinori; Tateiwa, Naoyuki; Kambe, Shinsaku; Yamamoto, Etsuji; Gouchi, Jun; Uwatoko, Yoshiya; Nagasaki, Shoko; Honda, Fuminori; Homma, Yoshiya

2017-01-01

We report the effect of hydrostatic pressure on the electronic state of the antiferromagnet UIrGe, which is isostructural and isoelectronic with the ferromagnetic superconductors UCoGe and URhGe. A series of electrical resistivity measurements in a piston–cylinder-type cell and a cubic-anvil cell were performed at hydrostatic pressures up to 15 GPa. The Néel temperature decreases with increasing pressure. We constructed a p–T phase diagram and estimated the critical pressure p_c, where the antiferromagnetism vanishes, as ∼12 GPa. The antiferromagnetic/paramagnetic transition appears to be first order. We suggest a scenario of competing antiferromagnetic inter-J- and ferromagnetic intra-J*-chain interactions in UIrGe. A moderate increase in the effective electron mass was detected in the vicinity of p_c. A discussion of the electronic specific heat γ and electron–electron correlation term A using the Kadowaki–Woods relation is given. (author)

Growth of crystallized Ge films from VHF inductively-coupled plasma of H2-diluted GeH4

International Nuclear Information System (INIS)

Sakata, T.; Makihara, K.; Murakami, H.; Higashi, S.; Miyazaki, S.

2007-01-01

We have studied the Ge crystalline nucleation and film growth on quartz substrate at 250 deg. C from inductively-coupled plasma (ICP) of GeH 4 diluted with H 2 . The ICP was generated by supplying 60 MHz power to an external single-turn antenna which was placed on a quartz plate window of a stainless steel reactor and parallel to the substrate. We have found that the growth rate is significantly increased when the preferential growth of the (110) plane becomes pronounced after the formation of randomly-oriented crystalline network. The (110) oriented Ge films, of which average crystallinity is as high as 70%. The integrated intensity ratio of TO phonons in crystalline phase to those in disordered phase, were grown at a rate of ∼ 4.0 nm/s after the formation of amorphous incubation layer with a thickness of ∼ 0.1 μm on quartz

Structural and electrical evaluation for strained Si/SiGe on insulator

International Nuclear Information System (INIS)

Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

2006-01-01

Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Science.gov (United States)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

A frontier in fast computing

CERN Document Server

von der Schmitt, Hans; The ATLAS collaboration

2012-01-01

The primary mission of particle physics is fundamental science. Big apparatus is required however to do such science: accelerators, detectors, and computing. Also the methodology used forms a trinity: experiment, theory, and simulation. This talk has a focus on computing and simulation. The worldwide Grid computing allows us to analyze all data within days after they are recorded at the experiment and to get to physics results quickly, as in the case of the recently discovered Higgs-like boson at 126 GeV mass. Developments in simulation, computing, accelerators and detectors all provided valuable technical results to society, e.g. the WWW, hadron therapy and medical imaging. The technology aspect and the fundamental science aspect of particle physics, and of other fields of physics, are both important for the role of science in the third millenium.

Halbwachs no Collège de France

Directory of Open Access Journals (Sweden)

Laurent Mucchielli

2001-01-01

Full Text Available Este artigo apresenta documento escrito por Maurice Halbwachs, em seus cadernos de memória. Seu principal tema é a eleição de Halbwachs para o Collège de France.This article presents the document writen by Maurice Halbwachs, in his memory-books. Its main subject is the Halbwachs election for the Collège de France.

Measurement of hadron and lepton-pair production at 130 GeV $<$ $\\sqrt{s}$ $<$ 140 GeV at LEP

CERN Document Server

Acciarri, M; Adriani, O; Aguilar-Benítez, M; Ahlen, S P; Alpat, B; Alcaraz, J; Allaby, James V; Aloisio, A; Alverson, G; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Antreasyan, D; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Baksay, L; Ball, R C; Banerjee, S; Banicz, K; Barillère, R; Barone, L; Bartalini, P; Baschirotto, A; Basile, M; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bencze, G L; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biland, A; Bilei, G M; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böck, R K; Böhm, A; Borgia, B; Boucham, A; Bourilkov, D; Bourquin, Maurice; Boutigny, D; Brambilla, Elena; Branson, J G; Brigljevic, V; Brock, I C; Buijs, A; Bujak, A T; Burger, J D; Burger, W J; Burgos, C; Busenitz, J K; Buytenhuijs, A O; Cai, X D; Campanelli, M; Capell, M; Cara Romeo, G; Caria, M; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Castello, R; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chan, A; Chang, Y H; Chaturvedi, U K; Chemarin, M; Chen, A; Chen, C; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chéreau, X J; Chiefari, G; Chien, C Y; Choi, M T; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Coan, T E; Cohn, H O; Coignet, G; Colijn, A P; Colino, N; Commichau, V; Costantini, S; Cotorobai, F; de la Cruz, B; Dai, T S; D'Alessandro, R; De Asmundis, R; De Boeck, H; Degré, A; Deiters, K; Dénes, E; Denes, P; De Notaristefani, F; DiBitonto, Daryl; Diemoz, M; Van Dierendonck, D N; Di Lodovico, F; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dorne, I; Dova, M T; Drago, E; Duchesneau, D; Duinker, P; Durán, I; Dutta, S; Easo, S; Efremenko, Yu V; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ernenwein, J P; Extermann, Pierre; Fabbretti, R; Fabre, M; Faccini, R; Falciano, S; Favara, A; Fay, J; Felcini, Marta; Ferguson, T; Fernández, D; Fernández, G; Ferroni, F; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Forconi, G; Fredj, L; Freudenreich, Klaus; Gailloud, M; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gau, S S; Gentile, S; Gerald, J; Gheordanescu, N; Giagu, S; Goldfarb, S; Goldstein, J; Gong, Z F; González, E; Gougas, Andreas; Goujon, D; Gratta, Giorgio; Grünewald, M W; Gupta, V K; Gurtu, A; Gustafson, H R; Gutay, L J; Hangarter, K; Hartmann, B; Hasan, A; He, J T; Hebbeker, T; Hervé, A; Van Hoek, W C; Hofer, H; Hoorani, H; Hou, S R; Hu, G; Ilyas, M M; Innocente, Vincenzo; Janssen, H; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kasser, A; Khan, R A; Kamyshkov, Yu A; Kapinos, P; Kapustinsky, J S; Karyotakis, Yu; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, J K; Kim, S C; Kim, Y G; Kinnison, W W; Kirkby, A; Kirkby, D; Kirkby, Jasper; Kittel, E W; Klimentov, A; König, A C; Koffeman, E; Köngeter, A; Koutsenko, V F; Koulbardis, A; Krämer, R W; Kramer, T; Krenz, W; Kuijten, H; Kunin, A; Ladrón de Guevara, P; Landi, G; Lapoint, C; Lassila-Perini, K M; Laurikainen, P; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Lee Jae Sik; Lee, K Y; Leggett, C; Le Goff, J M; Leiste, R; Lenti, M; Leonardi, E; Levchenko, P M; Li Chuan; Lieb, E H; Lin, W T; Linde, Frank L; Lindemann, B; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, W; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Ludovici, L; Luminari, L; Lustermann, W; Ma Wen Gan; Macchiolo, A; Maity, M; Majumder, G; Malgeri, L; Malinin, A; Maña, C; Mangla, S; Maolinbay, M; Marchesini, P A; Marin, A; Martin, J P; Marzano, F; Massaro, G G G; Mazumdar, K; McNally, D; McNeil, R R; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mi, Y; Mihul, A; Van Mil, A J W; Mirabelli, G; Mnich, J; Möller, M; Monteleoni, B; Moore, R; Morganti, S; Mount, R; Müller, S; Muheim, F; Nagy, E; Nahn, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nippe, A; Nowak, H; Organtini, G; Ostonen, R; Pandoulas, D; Paoletti, S; Paolucci, P; Park, H K; Pascale, G; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Pei, Y J; Pensotti, S; Perret-Gallix, D; Petrak, S; Pevsner, A; Piccolo, D; Pieri, M; Pinto, J C; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Produit, N; Raghavan, R; Rahal-Callot, G; Rancoita, P G; Rattaggi, M; Raven, G; Razis, P A; Read, K; Redaelli, M; Ren, D; Rescigno, M; Reucroft, S; Ricker, A; Riemann, S; Riemers, B C; Riles, K; Rind, O; Ro, S; Robohm, A; Rodin, J; Rodríguez-Calonge, F J; Roe, B P; Röhner, S; Romero, L; Rosier-Lees, S; Rosselet, P; Van Rossum, W; Roth, S; Rubio, Juan Antonio; Rykaczewski, H; Salicio, J; Salicio, J M; Sánchez, E; Santocchia, A; Sarakinos, M E; Sarkar, S; Sassowsky, M; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schmitz, P; Schneegans, M; Schöneich, B; Scholz, N; Schopper, Herwig Franz; Schotanus, D J; Schulte, R; Schultze, K; Schwenke, J; Schwering, G; Sciacca, C; Seiler, P G; Sens, Johannes C; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shukla, J; Shumilov, E; Siedenburg, T; Son, D; Sopczak, André; Soulimov, V; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Sticozzi, F; Stone, H; Stoyanov, B; Strässner, A; Strauch, K; Sudhakar, K; Sultanov, G G; Sun, L Z; Susinno, G F; Suter, H; Swain, J D; Tang, X W; Tauscher, Ludwig; Taylor, L; Ting, Samuel C C; Ting, S M; Toker, O; Tonisch, F; Tonutti, M; Tonwar, S C; Tóth, J; Tsaregorodtsev, A Yu; Tully, C; Tuchscherer, H; Tung, K L; Ulbricht, J; Urbàn, L; Uwer, U; Valente, E; Van de Walle, R T; Vetlitskii, I; Viertel, Gert M; Vivargent, M; Völkert, R; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Vuilleumier, L; Wadhwa, M; Wallraff, W; Wang, J C; Wang, X L; Wang, Y F; Wang, Z M; Weber, A; Weill, R; Willmott, C; Wittgenstein, F; Wu, S X; Wynhoff, S; Xu, J; Xu, Z Z; Yang, B Z; Yang, C G; Yao, X Y; Ye, J B; Yeh, S C; You, J M; Zaccardelli, C; Zalite, A; Zemp, P; Zeng, J Y; Zeng, Y; Zhang, Z; Zhang, Z P; Zhou, B; Zhou, G J; Zhou, Y; Zhu, G Y; Zhu, R Y; Zichichi, Antonino; Van der Zwaan, B C C

1996-01-01

We report on the first measurements of e+e- annihilations into hadrons and lepton pairs at center-of-mass energies between 130 GeV and 140 GeV. In a total luminosity of 5 pb-1 collected with the L3 detector at LEP we select 1577 hadronic and 401 lepton-pair events. The measured cross sections and leptonic forward-backward asymmetries agree well with the Standard Model predictions.

Anti pp elastic scattering at 30 GeV/c incident momentum in the momentum transfer range 0. 5<-t<5. 8(GeV/c)/sup 2/

Energy Technology Data Exchange (ETDEWEB)

Asa' d, Z.; Coupland, M.; Davis, D.G.; Duff, B.G.; Fearnley, T.; Heymann, F.F.; Imrie, D.C.; Lush, G.J.; Phillips, M. (University Coll., London (UK)); Baglin, A.

1983-10-27

The anti pp elastic differential cross section at 30 GeV/c incident momentum has been measured in a two-arm spectrometer experiment (WA7) at the CERN SPS. The vertical stroketvertical stroke-range covered extends from 0.5 to 5.8 (GeV/c)/sup 2/. A pronounced dip-bump structure is observed, with a sharp minimum around vertical stroketvertical strokeapprox.=1.7 (GeV/c)/sup 2/. The results are compared with existing anti pp data at lower energies and with our earlier anti pp data at 50 GeV/c. A number of model predictions are discussed. We also compare the anti pp 30 GeV/c differential cross section with that of pp at the same momentum. Finally, the energy dependence of the anti pp fixed-vertical stroketvertical stroke differential cross section in the incident momentum range 3.6 to 50 GeV/c is presented.

<300> GeV team

CERN Multimedia

CERN PhotoLab

1971-01-01

The 300 GeV team had been assembled. In the photograph are Hans Horisberger, Clemens Zettler, Roy Billinge, Norman Blackburne, John Adams, Hans-Otto Wuster, Lars Persson, Bas de Raad, Hans Goebel, Simon Van der Meer.

Epitaxial growth of Ge-Sb-Te based phase change materials

International Nuclear Information System (INIS)

Perumal, Karthick

2013-01-01

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Axial Ge/Si nanowire heterostructure tunnel FETs.

Energy Technology Data Exchange (ETDEWEB)

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

Extreme IR absorption in group IV-SiGeSn core-shell nanowires

Science.gov (United States)

Attiaoui, Anis; Wirth, Stephan; Blanchard-Dionne, André-Pierre; Meunier, Michel; Hartmann, J. M.; Buca, Dan; Moutanabbir, Oussama

2018-06-01

Sn-containing Si and Ge (Ge1-y-xSixSny) alloys are an emerging family of semiconductors with the potential to impact group IV material-based devices. These semiconductors provide the ability to independently engineer both the lattice parameter and bandgap, which holds the premise to develop enhanced or novel photonic and electronic devices. With this perspective, we present detailed investigations of the influence of Ge1-y-xSixSny layers on the optical properties of Si and Ge based heterostructures and nanowires. We found that by adding a thin Ge1-y-xSixSny capping layer on Si or Ge greatly enhances light absorption especially in the near infrared range, leading to an increase in short-circuit current density. For the Ge1-y-xSixSny structure at thicknesses below 30 nm, a 14-fold increase in the short-circuit current is observed with respect to bare Si. This enhancement decreases by reducing the capping layer thickness. Conversely, decreasing the shell thickness was found to improve the short-circuit current in Si/Ge1-y-xSixSny and Ge/Ge1-y-xSixSny core/shell nanowires. The optical absorption becomes very important by increasing the Sn content. Moreover, by exploiting an optical antenna effect, these nanowires show extreme light absorption, reaching an enhancement factor, with respect to Si or Ge nanowires, on the order of 104 in Si/Ge0.84Si0.04Sn0.12 and 12 in Ge/Ge0.84Si0.04Sn0.12. Furthermore, we analyzed the optical response after the addition of a dielectric layer of Si3N4 to the Si/Ge1-y-xSixSny core-shell nanowire and found approximatively a 50% increase in the short-circuit current density for a dielectric layer of thickness equal to 45 nm and both a core radius and a shell thickness greater than 40 nm. The core-shell optical antenna benefits from a multiplication of enhancements contributed by leaky mode resonances in the semiconductor part and antireflection effects in the dielectric part.

Magnetic properties in the vortex state of Pr1-xNdxPt4Ge12 and PrPt3.88Fe0.12Ge12 superconductors

Science.gov (United States)

Chandra, L. S. Sharath; Chattopadhyay, M. K.

2018-03-01

We report the temperature and magnetic field dependence of magnetization of Pr1-xNdxPt4Ge12 (x = 0, 0.05 and 0.1) and PrPt3.88Fe0.12Ge12 below 10 K and up to 2 T magnetic field. When compared to the parent PrPt4Ge12, while the critical current density and flux pinning properties are enhanced in the Pr1-xNdxPt4Ge12 samples, they are considerably diminished in the PrPt3.88Fe0.12Ge12 sample. We argue that the observed changes are related to the way the substituting atoms at different crystallographic sites influence the superconductivity in these Germanide skutterudites.

Radiation resistance of GeO2-doped silica core optical fibers

International Nuclear Information System (INIS)

Shibata, Shuichi; Nakahara, Motohiro; Omori, Yasuharu

1985-01-01

Effects of hlogen addition to silica glass on the loss in optical fibers are examined by using halogen-free, chlorine-containing and fluorine-containing GeO 2 -doped silica core optical fibers. Measurements are made for dependence of induced loss in these optical fibers on various factors such as wavelength and total dose of gamma radiation as well as GeO 2 content. Ultraviolet absorption spectra are also observed. In addition, effects of halogens added to pure silica fibers are considered on the basis of Raman spectra of three different optical fibers (pure, F-doped, and F- and GeO 2 -codoped silica core). Thus, it is concluded that (1) addition of halogens (F and Cl) serves to decrease GeO defects and Ge(3) defects in GeO 2 -doped silica optical fibers ; (2) addition of halogens suppresses the increase in loss in GeO 2 -doped silica optical fibers induced by gamma radiation ; and (3) there are close relations between the increase in loss induced by gamma radiation and defects originally existing in the fibers. Effects of halogens added to GeO 2 -doped and pure silica optical fibers can be explained on the basis of the latter relations. (Nogami, K.)

Studies of the chemical behavior of carrier-free 68Ge. Pt. 1

International Nuclear Information System (INIS)

Mirzadeh, S.; Kahn, M.; Grant, P.M.; O'Brien, H.A. Jr.

1981-01-01

The diagnostic utilization of the 68 Ge- 68 Ga system in nuclear medicine stimulated the development of a rapid and efficient method for the purification of carrier-free 68 Ge. A standard procedure for the separation of macroscopic quantities for germanium from numerous other elements involves the distillation of Ge(IV) from HCl solution. The applicability of this method for the purification of carrier-free 68 Ge was studied, and it was found that 68 Ge quantitatively and conveniently distills from azetropic HCl. The distillation of 68 Ge from LiCl-HClO 4 , HCl-LiCl, and HCl-HClO 4 systems was also investigated. (orig.) [de

Local charge trapping in Ge nanoclustersdetected by Kelvin probe force microscopy

Energy Technology Data Exchange (ETDEWEB)

Kondratenko, S.V., E-mail: kondr@univ.kiev.ua [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Lysenko, V.S. [Institute of Semiconductor Physics, 41 Prospect Nauki, 03028, Kyiv (Ukraine); Kozyrev, Yu. N. [O.O. Chuiko Institute of Surface Chemistry, 17 GeneralaNaumova Str. 03164, Kiev (Ukraine); Kratzer, M. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Storozhuk, D.P.; Iliash, S.A. [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Czibula, C. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Teichert, C., E-mail: teichert@unileoben.ac.at [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria)

2016-12-15

The understanding of local charge trapping on the nanoscale is crucial for the design of novel electronic devices and photodetectors based on SiGe nanoclusters (NCs). Here, the local spatial distribution of the surface potential of the Ge NCs was detected using Kelvin probe force microscopy (KPFM). Different surface potentials between Ge NCs and the wetting layer (WL) surface were detected at room temperature. Changes of the local contact potential differences (CPD) were studied after injection of electrons or holes into single Ge NCs on top of the Si layer using a conductive atomic force microscopy tip. The CPD image contrast was increased after electron injection by applying a forward bias to the n-tip/i-Ge NC/p-Si junction. Injecting holes into a single Ge NC was also accompanied by filling of two-dimensional states in the surrounding region, which is governed by leakage currents through WL or surface states and Coulomb charging effects. A long retention time of holes trapped by the Ge NC was found.

Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

International Nuclear Information System (INIS)

Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

2014-01-01

The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)