WorldWideScience

Sample records for ge computers

  1. Ge(Li) data reduction using small computers

    Science.gov (United States)

    Mcdermott, W. E.

    1972-01-01

    The advantages and limitations of using a small computer to analyze Ge(Li) radiation spectra are studied. The computer has to: (1) find the spectrum peaks, (2) determine the count rate in the photopeaks, and (3) relate the count rate to known gamma transitions to find the amount of each radionuclide present. Results show that tasks one and two may be done by the computer but task three must be done by an experimenter or a larger computer.

  2. Structural, electronic and optical characteristics of SrGe{sub 2} and BaGe{sub 2}: A combined experimental and computational study

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

    2015-05-05

    Highlights: • Charge transfer between cation and anion atoms observed first time in digermandies. • Study yields a band gap of ∼1 eV and ∼0.85 eV for SrGe{sub 2} and BaGe{sub 2}, respectively. • Band gap decrease with the application of hydrostatic pressure. • Localized cation d states lead to a large absorption coefficient (>7.5 × 10{sup 4} cm{sup −1}). - Abstract: SrGe{sub 2} and BaGe{sub 2} were characterized for structural, electronic and optical properties by means of diffuse reflectance and first-principles density functional theory. These two germanides crystallize in the BaSi{sub 2}-type structure, in which Ge atoms are arranged in tetrahedral configuration. The calculation indicates a charge transfer from Sr (or Ba) atoms to Ge atoms along with the formation of covalent bonds among Ge atoms in Ge tetrahedral. The computational results confirm that these two germanies are Zintl phase described as Sr{sub 2}Ge{sub 4} (or Ba{sub 2}Ge{sub 4}), which are characterized by positively charged [Sr{sub 2} (or Ba{sub 2})]{sup 2.59+} and negatively charged [Ge{sub 4}]{sup 2.59−} units acting as cation and anion, respectively. These compounds are indirect gap semiconductors with band gap estimated to be E{sub g} = 1.02 eV for BaGe{sub 2} and E{sub g} = 0.89 eV for SrGe{sub 2} which are in good agreement with our experimental measured values (E{sub g} = 0.97 eV for BaGe{sub 2} and E{sub g} = 0.82 eV for SrGe{sub 2}). Our calculations demonstrate that the band gaps are narrowed by application of hydrostatic pressure; the pressure coefficients are estimated to be −10.54 for SrGe{sub 2} and −10.06 meV/GPa for BaGe{sub 2}. Optical properties reveal that these compounds have large absorption coefficient (∼7.5 × 10{sup 4} cm{sup −1} at 1.5 eV) and the estimated high frequency (static) dielectric constant are, ε{sub ∞}(ε{sub 0}) ≈ 12.8(20.97) for BaGe{sub 2} and ε{sub ∞}(ε{sub 0}) ≈ 14.27(22.87) for SrGe{sub 2}.

  3. NMR and computational study of Ba8CuxGe46-x clathrate semiconductors

    International Nuclear Information System (INIS)

    Chen, Jing-Han; Sirusi Arvij, Ali; Zheng, Xiang; Rodriguez, Sergio Y.; Ross, Joseph H.

    2014-01-01

    Highlights: • Quadrupole NMR with first-principles calculations probes local site preferences. • Cu/Ge ratio is clarified vs. the ideal Zintl composition. • Modified Becke–Johnson exchange potential agrees well with NMR Knight shifts. - Abstract: Ba 8 Cu x Ge 46-x is a type-I clathrate material that forms as a semiconductor in a narrow composition range corresponding to the electron-balanced Zintl composition, with x = 5.3. We use NMR spectroscopy combined with ab initio electronic structure calculations to probe the electronic and structural behavior of these materials. Computational results based on a superstructure model for the atomic configuration of the alloy provide good agreement with the electric quadrupole-broadened NMR lineshapes. Modeling using the modified Becke–Johnson (TB-mBJ) exchange potential is also shown to agree well with experimental NMR Knight shifts. The results indicate that the Cu–Ge balance is the main factor determining the carrier density, within a narrow stability range near the ideal Zintl composition

  4. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  5. A summary of computational experience at GE Aircraft Engines for complex turbulent flows in gas turbines

    Science.gov (United States)

    Zerkle, Ronald D.; Prakash, Chander

    1995-01-01

    This viewgraph presentation summarizes some CFD experience at GE Aircraft Engines for flows in the primary gaspath of a gas turbine engine and in turbine blade cooling passages. It is concluded that application of the standard k-epsilon turbulence model with wall functions is not adequate for accurate CFD simulation of aerodynamic performance and heat transfer in the primary gas path of a gas turbine engine. New models are required in the near-wall region which include more physics than wall functions. The two-layer modeling approach appears attractive because of its computational complexity. In addition, improved CFD simulation of film cooling and turbine blade internal cooling passages will require anisotropic turbulence models. New turbulence models must be practical in order to have a significant impact on the engine design process. A coordinated turbulence modeling effort between NASA centers would be beneficial to the gas turbine industry.

  6. Find - a computer program for peak search in gamma-ray spectra measured with Ge (Li) detectors

    International Nuclear Information System (INIS)

    Venturini, L.

    1988-01-01

    The program FIND is a FORTRAN IV computer code for peak search in spectra measured with Ge(Li) detectors. The program gives the position and estimates energy and relative significance for every peak found in the spectrum. The search in done by calculating a negative smoothed second difference of the experimental spectrum, as suggested by Phillips and Marlow (1). (author) [pt

  7. Device controllers using an industrial personal computer of the PF 2.5-GeV Electron Linac at KEK

    International Nuclear Information System (INIS)

    Otake, Yuji; Yokota, Mitsuhiro; Kakihara, Kazuhisa; Ogawa, Yujiro; Ohsawa, Satoshi; Shidara, Tetsuo; Nakahara, Kazuo

    1992-01-01

    Device controllers for electron guns and slits using an industrial personal computer have been designed and installed in the Photon Factory 2.5-GeV Electron Linac at KEK. The design concept of the controllers is to realize a reliable system and good productivity of hardware and software by using an industrial personal computer and a programmable sequence controller. The device controllers have been working reliably for several years. (author)

  8. NMR and computational study of Ba{sub 8}Cu{sub x}Ge{sub 46-x} clathrate semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jing-Han, E-mail: jhchen@tamu.edu; Sirusi Arvij, Ali; Zheng, Xiang; Rodriguez, Sergio Y.; Ross, Joseph H.

    2014-04-01

    Highlights: • Quadrupole NMR with first-principles calculations probes local site preferences. • Cu/Ge ratio is clarified vs. the ideal Zintl composition. • Modified Becke–Johnson exchange potential agrees well with NMR Knight shifts. - Abstract: Ba{sub 8}Cu{sub x}Ge{sub 46-x} is a type-I clathrate material that forms as a semiconductor in a narrow composition range corresponding to the electron-balanced Zintl composition, with x = 5.3. We use NMR spectroscopy combined with ab initio electronic structure calculations to probe the electronic and structural behavior of these materials. Computational results based on a superstructure model for the atomic configuration of the alloy provide good agreement with the electric quadrupole-broadened NMR lineshapes. Modeling using the modified Becke–Johnson (TB-mBJ) exchange potential is also shown to agree well with experimental NMR Knight shifts. The results indicate that the Cu–Ge balance is the main factor determining the carrier density, within a narrow stability range near the ideal Zintl composition.

  9. Technology computer aided design for Si, SiGe and GaAs integrated circuits

    CERN Document Server

    Armstrong, GA

    2007-01-01

    The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-

  10. Computing the cross sections of nuclear reactions with nuclear clusters emission for proton energies between 30 MeV and 2.6 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Korovin, Yu. A.; Maksimushkina, A. V., E-mail: AVMaksimushkina@mephi.ru; Frolova, T. A. [Obninsk Institute for Nuclear Power Engineering, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

    2016-12-15

    The cross sections of nuclear reactions involving emission of clusters of light nuclei in proton collisions with a heavy-metal target are computed for incident-proton energies between 30 MeV and 2.6 GeV. The calculation relies on the ALICE/ASH and CASCADE/INPE computer codes. The parameters determining the pre-equilibrium cluster emission are varied in the computation.

  11. Our experience in using the whole body computed tomography unit (GE CT/T)

    International Nuclear Information System (INIS)

    Murakawa, Yasuhiro; Morimoto, Mitsuo; Ishigaki, Naoya; Zaitsu, Hiroaki; Kawabata, Kohji

    1983-01-01

    Since our hospital installed the CT unit of the head and neck (SCT-100N) in April, 1979, we reported our experience in using this equipment in 1980 and 1982. After that, since the whole body CT unit (GE CT/T) was installed in our hospital in April, 1982, the total number of CT examination have reached approximately three thousand five handred till this August. Consequently, this CT image seemed to be superior in image quality to that obtained by other CT equipment. The most important characteristic of this equipment is that the retrospective and prospective reviews of the target image and the coronal and sagittal recontruction from contiguous transverse axial scans are possible. We show in this report two experimental CT photograms obtained by the reviews of the target image in using of microchart phantom and CT photograms of uterus myoma, metastatic thyroid and liver cancers and further, of contiguous transverse axial scans of cerebral embolism and the coronal recontruction. The important problems for the future of this equipment are those of absorbed X-ray dose of the patients and the scan time. (author)

  12. GAUSS VII: a computer program for the analysis of #betta#-ray spectra from Ge semiconductor spectrometers

    International Nuclear Information System (INIS)

    McCullagh, C.M.; Helmer, R.G.

    1982-10-01

    A description is given of a computer program, GAUSS VII, which has been written to determine #betta#-ray spectra from Ge semiconductor spectrometers. The preliminary portions of the program can determine the energy and width calibration equations, loacte individual peaks and define peak regions that are significantly above the local spectral background. The user may edit these lists of peaks and regions. Each peak region is fitted with one or more components in which the peaks are represented by a Gaussian function or a Gaussian with one or two additive exponential tails on the low-energy side and one on the high-energy side. A step-like background function can be used with each component. The program will automatically recycle to add one or more components to a region if needed to improve the fit. The #betta#-ray energies and intensities are computed from resulting Gaussian positions and peak areas. To allow the user to determine the best results, the results from the analyses for each region with different numbers of components can be printed and line-printer plots of the fits to the data can be made. The quality of the results depends primarily on the ability of the program to define a good spectral region for each analysis and the ability to recycle to determine the proper number of components

  13. GAUSS VIII: a computer program for the nuclide activity analysis of γ-ray spectra from GE semiconductor spectrometers

    International Nuclear Information System (INIS)

    Putman, M.H.; Helmer, R.G.; McCullagh, C.M.

    1985-12-01

    A description is given of a computer program, GAUSS VII, which has been written to determine nuclide or isotopic activities from γ-ray spectra from GE semiconductor spectrometers. The preliminary portion of the program can determine the energy- and width-calibration equations, locate individual peaks and define ''peak regions'' that are significantly above the local spectral background. The user may edit these lists of peaks and regions. Each peak region is fitted with one or more components in which the peaks are represented by a Gaussian function or a Gaussian with one or two additive exponential tails on the low-energy side and one on the high-energy side. A step-like background function can be used with each component. The program will automatically recycle to add one or more components to a region if needed to improve the fit. The γ-ray energies and intensities are computed from the resulting Gaussian positions and peak areas. From a comparison of these peak energies and the γ-ray energies for various nuclides in a nuclide library, the nuclides that may be present are identified. The user may edit this nuclide list. The program identifies secondary γ rays that should be present for these nuclides and obtains peak areas for them, if the areas are not already available. All of the peak areas are then analyzed to obtain the best nuclidic activities. The peak areas for any one nuclide and those for nuclides that have interfering lines are analyzed in one least-squares ft. Nuclides whose activities are essentially 0, and peaks which cannot be accounted for are removed from the analysis. Besides the nuclidic activities, a peak-by-peak summary is provided. This program is intended to analyze large groups of spectra as well as an individual spectrum

  14. SEDRX: A computer program for the simulation Si(Li) and Ge(Hp) x-ray detectors efficiency

    International Nuclear Information System (INIS)

    Benamar, M.A.; Benouali, A.; Tchantchane, A.; Azbouche, A.; Tobbeche, S. Centre de Developpement des Techniques Nucleaires, Algiers; Labo. des Techniques Nucleaires)

    1992-12-01

    The difficulties encountered in measuring the x-ray detectors efficiency has motivated to develop a computer program to simulate this parameter. this program computes the efficiency of detectors as a function of energy. the computation of this parameter is based on the fitting coefficients of absorption in the case of photoelectric, coherent and incoherent factors. These coefficients are given by Mc Master library or may be determined by the interpolation based on cubic splines

  15. Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

    International Nuclear Information System (INIS)

    Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

    2014-01-01

    The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)

  16. Computational modeling of the structure and the ionic conductivity of the solid electrolyte materials Li3AsS4 and its Ge substitutions

    Science.gov (United States)

    Al-Qawasmeh, Ahmad; Holzwarth, N. A. W.

    Oak Ridge National Laboratory (G. Sahu et al.) reported that the substitution of Ge into Li3AsS4 leads to the composition Li3.334Ge0.334As0.666S4 with impressively high ionic conductivity . We use ab initio calculations to examine the structural relationships and the ionic conductivity mechanisms for pure Li3AsS4, Li3.334Ge0.334As0.666S4, and other compositions of these electrolytes. Supported by NSF Grant DMR-1105485 and 1507942 and WFU's DEAC cluster.

  17. The computational study of adsorption of carbon monoxide on pristine and Ge-doped (6,0 zigzag models of BNNTs

    Directory of Open Access Journals (Sweden)

    Mahdi Rezaei Sameti

    2014-07-01

    Full Text Available The aim of this research is studying the effects of Ge-doped on CO adsorption on the outer and inner surfaces of (6, 0 zigzag model of boron nitride nanotube (BNNTs by using DFT theory. For this purpose, eight models of CO adsorption on the surfaces of BNNTs are considered. At first step, all structures were optimized at B3LYP and 6-31G (d standard base set and then the electronic structure, adsorption energy, HOMO - LUMO orbitals, gap energy, quantum molecular descriptors, and NQR parameters were determined. The bond lengths neighborhood sites of Ge-doped of BNNTs at all models were increased and the bond angles decreased. The small ad-sorption energy value and large interaction distance show that the adsorption of CO on BNNTs is weakly physical adsorption due to weak Van der Waals interaction. Our calculated results show that the adsorption of CO on the surface of undoped models is more favorable than Ge-doped models. The NQR parameters of the first layer in all the models are larger than those other layers.

  18. SCINFUL-QMD: Monte Carlo based computer code to calculate response function and detection efficiency of a liquid organic scintillator for neutron energies up to 3 GeV

    International Nuclear Information System (INIS)

    Satoh, Daiki; Sato, Tatsuhiko; Shigyo, Nobuhiro; Ishibashi, Kenji

    2006-11-01

    The Monte Carlo based computer code SCINFUL-QMD has been developed to evaluate response function and detection efficiency of a liquid organic scintillator for neutrons from 0.1 MeV to 3 GeV. This code is a modified version of SCINFUL that was developed at Oak Ridge National Laboratory in 1988, to provide a calculated full response anticipated for neutron interactions in a scintillator. The upper limit of the applicable energy was extended from 80 MeV to 3 GeV by introducing the quantum molecular dynamics incorporated with the statistical decay model (QMD+SDM) in the high-energy nuclear reaction part. The particles generated in QMD+SDM are neutron, proton, deuteron, triton, 3 He nucleus, alpha particle, and charged pion. Secondary reactions by neutron, proton, and pion inside the scintillator are also taken into account. With the extension of the applicable energy, the database of total cross sections for hydrogen and carbon nuclei were upgraded. This report describes the physical model, computational flow and how to use the code. (author)

  19. Study of Ge loss during Ge condensation process

    International Nuclear Information System (INIS)

    Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

    2014-01-01

    Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

  20. GRETEL, Ge(Li) Gamma Spectra Unfolding

    International Nuclear Information System (INIS)

    1975-01-01

    1 - Nature of physical problem solved: The program performs the quantitative analysis of gamma-ray spectra obtained by Ge(Li) detectors, using special libraries which are prepared for each particular problem. 2 - Method of solution: The computer routines which detect and evaluate peak areas perform the following operations: - local smoothing of the spectrum; - first derivative of the smoothed spectrum, - peak location according to the change of sign of the first derivative; - computation of the net area of each peak found

  1. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  2. Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

    Science.gov (United States)

    Bashir, A.; Gallacher, K.; Millar, R. W.; Paul, D. J.; Ballabio, A.; Frigerio, J.; Isella, G.; Kriegner, D.; Ortolani, M.; Barthel, J.; MacLaren, I.

    2018-01-01

    A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%-90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.

  3. SAMPO, A Fortran IV Program for Computer Analysis of Gamma Spectrafrom Ge(Li) Detectors, and for Other Spectra with Peaks

    Energy Technology Data Exchange (ETDEWEB)

    Routti, Jorma T.

    1969-10-20

    SAMPO is a Fortran IV program written to perform the data- reduction analysis described by J. T. Routti and S. G. Prussin in Photopeak Method for the Computer Analysis of Gamma-Ray Spectra from Semiconductor Detectors, Nuclear Instruments and Methods 72, 125-142 (1969). The code has also been used to analyze other spectra with peaks and continua. Program SAMPO can be used for an automatic off-line or an interactive on-line analysis. It includes algorithms for line-shape, energy, and efficiency calibrations, and peak-search and peak-fitting routines. Different options are available to make the code applicable to accurate nuclear spectroscopic work as well as to routine data reduction. The mathematical methods and their coding are briefly described. Instructions for using the program and for preparing input data are given and the optimal strategies for running the code are discussed. Instructions are given for using the LRL program library version of SAMPO and for obtaining source decks.

  4. Energy levels of germanium, Ge I through Ge XXXII

    International Nuclear Information System (INIS)

    Sugar, J.; Musgrove, A.

    1993-01-01

    Atomic energy levels of germanium have been compiled for all stages of ionization for which experimental data are available. No data have yet been published for Ge VIII through Ge XIII and Ge XXXII. Very accurate calculated values are compiled for Ge XXXI and XXXII. Experimental g-factors and leading percentages from calculated eigenvectors of levels are given. A value for the ionization energy, either experimental when available or theoretical, is included for the neutral atom and each ion. section

  5. HP Ge planar detectors

    International Nuclear Information System (INIS)

    Gornov, M.G.; Gurov, Yu.B.; Soldatov, A.M.; Osipenko, B.P.; Yurkowski, J.; Podkopaev, O.I.

    1989-01-01

    Parameters of planar detectors manufactured of HP Ge are presented. The possibilities to use multilayer spectrometers on the base of such semiconductor detectors for nuclear physics experiments are discussed. It is shown that the obtained detectors including high square ones have spectrometrical characteristics close to limiting possible values. 9 refs.; 3 figs.; 1 tab

  6. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  7. COMPUTING

    CERN Multimedia

    M. Kasemann

    Overview In autumn the main focus was to process and handle CRAFT data and to perform the Summer08 MC production. The operational aspects were well covered by regular Computing Shifts, experts on duty and Computing Run Coordination. At the Computing Resource Board (CRB) in October a model to account for service work at Tier 2s was approved. The computing resources for 2009 were reviewed for presentation at the C-RRB. The quarterly resource monitoring is continuing. Facilities/Infrastructure operations Operations during CRAFT data taking ran fine. This proved to be a very valuable experience for T0 workflows and operations. The transfers of custodial data to most T1s went smoothly. A first round of reprocessing started at the Tier-1 centers end of November; it will take about two weeks. The Computing Shifts procedure was tested full scale during this period and proved to be very efficient: 30 Computing Shifts Persons (CSP) and 10 Computing Resources Coordinators (CRC). The shift program for the shut down w...

  8. COMPUTING

    CERN Multimedia

    I. Fisk

    2011-01-01

    Introduction CMS distributed computing system performed well during the 2011 start-up. The events in 2011 have more pile-up and are more complex than last year; this results in longer reconstruction times and harder events to simulate. Significant increases in computing capacity were delivered in April for all computing tiers, and the utilisation and load is close to the planning predictions. All computing centre tiers performed their expected functionalities. Heavy-Ion Programme The CMS Heavy-Ion Programme had a very strong showing at the Quark Matter conference. A large number of analyses were shown. The dedicated heavy-ion reconstruction facility at the Vanderbilt Tier-2 is still involved in some commissioning activities, but is available for processing and analysis. Facilities and Infrastructure Operations Facility and Infrastructure operations have been active with operations and several important deployment tasks. Facilities participated in the testing and deployment of WMAgent and WorkQueue+Request...

  9. COMPUTING

    CERN Multimedia

    P. McBride

    The Computing Project is preparing for a busy year where the primary emphasis of the project moves towards steady operations. Following the very successful completion of Computing Software and Analysis challenge, CSA06, last fall, we have reorganized and established four groups in computing area: Commissioning, User Support, Facility/Infrastructure Operations and Data Operations. These groups work closely together with groups from the Offline Project in planning for data processing and operations. Monte Carlo production has continued since CSA06, with about 30M events produced each month to be used for HLT studies and physics validation. Monte Carlo production will continue throughout the year in the preparation of large samples for physics and detector studies ramping to 50 M events/month for CSA07. Commissioning of the full CMS computing system is a major goal for 2007. Site monitoring is an important commissioning component and work is ongoing to devise CMS specific tests to be included in Service Availa...

  10. COMPUTING

    CERN Multimedia

    M. Kasemann

    Overview During the past three months activities were focused on data operations, testing and re-enforcing shift and operational procedures for data production and transfer, MC production and on user support. Planning of the computing resources in view of the new LHC calendar in ongoing. Two new task forces were created for supporting the integration work: Site Commissioning, which develops tools helping distributed sites to monitor job and data workflows, and Analysis Support, collecting the user experience and feedback during analysis activities and developing tools to increase efficiency. The development plan for DMWM for 2009/2011 was developed at the beginning of the year, based on the requirements from the Physics, Computing and Offline groups (see Offline section). The Computing management meeting at FermiLab on February 19th and 20th was an excellent opportunity discussing the impact and for addressing issues and solutions to the main challenges facing CMS computing. The lack of manpower is particul...

  11. Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kocak, B.; Ciftci, Y.O., E-mail: yasemin@gazi.edu.tr

    2016-05-15

    Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.

  12. Backscattering analysis of AuGe-Ni ohmic contacts of n-GaAs

    International Nuclear Information System (INIS)

    Nassibian, A.G.; Kalkur, T.S.; Sutherland, G.J.; Cohen, D.

    1985-01-01

    AuGe-Ni is widely used for the fabrication of ohmic contacts to n-GaAs. The alloying behaviour of evaporated AuGe-Ni alloyed by furnace and Scanning Electron Beam, is characterised by Rutherford backscattering with 2MeV 4 He ions. Since the formation of alloyed AuGe-Ni contacts involves redistribution and diffusion of Ga, As, Ni, Ge and Au, it is difficult to separate the corresponding yields due to gold, Ga As, Ni and Ge in the spectrum. The technique used in the investigation involves assumption of depth distribution of elements and computing the resultant spectrum

  13. COMPUTING

    CERN Multimedia

    I. Fisk

    2013-01-01

    Computing activity had ramped down after the completion of the reprocessing of the 2012 data and parked data, but is increasing with new simulation samples for analysis and upgrade studies. Much of the Computing effort is currently involved in activities to improve the computing system in preparation for 2015. Operations Office Since the beginning of 2013, the Computing Operations team successfully re-processed the 2012 data in record time, not only by using opportunistic resources like the San Diego Supercomputer Center which was accessible, to re-process the primary datasets HTMHT and MultiJet in Run2012D much earlier than planned. The Heavy-Ion data-taking period was successfully concluded in February collecting almost 500 T. Figure 3: Number of events per month (data) In LS1, our emphasis is to increase efficiency and flexibility of the infrastructure and operation. Computing Operations is working on separating disk and tape at the Tier-1 sites and the full implementation of the xrootd federation ...

  14. COMPUTING

    CERN Multimedia

    I. Fisk

    2010-01-01

    Introduction It has been a very active quarter in Computing with interesting progress in all areas. The activity level at the computing facilities, driven by both organised processing from data operations and user analysis, has been steadily increasing. The large-scale production of simulated events that has been progressing throughout the fall is wrapping-up and reprocessing with pile-up will continue. A large reprocessing of all the proton-proton data has just been released and another will follow shortly. The number of analysis jobs by users each day, that was already hitting the computing model expectations at the time of ICHEP, is now 33% higher. We are expecting a busy holiday break to ensure samples are ready in time for the winter conferences. Heavy Ion An activity that is still in progress is computing for the heavy-ion program. The heavy-ion events are collected without zero suppression, so the event size is much large at roughly 11 MB per event of RAW. The central collisions are more complex and...

  15. COMPUTING

    CERN Multimedia

    M. Kasemann P. McBride Edited by M-C. Sawley with contributions from: P. Kreuzer D. Bonacorsi S. Belforte F. Wuerthwein L. Bauerdick K. Lassila-Perini M-C. Sawley

    Introduction More than seventy CMS collaborators attended the Computing and Offline Workshop in San Diego, California, April 20-24th to discuss the state of readiness of software and computing for collisions. Focus and priority were given to preparations for data taking and providing room for ample dialog between groups involved in Commissioning, Data Operations, Analysis and MC Production. Throughout the workshop, aspects of software, operating procedures and issues addressing all parts of the computing model were discussed. Plans for the CMS participation in STEP’09, the combined scale testing for all four experiments due in June 2009, were refined. The article in CMS Times by Frank Wuerthwein gave a good recap of the highly collaborative atmosphere of the workshop. Many thanks to UCSD and to the organizers for taking care of this workshop, which resulted in a long list of action items and was definitely a success. A considerable amount of effort and care is invested in the estimate of the comput...

  16. COMPUTING

    CERN Multimedia

    P. McBride

    It has been a very active year for the computing project with strong contributions from members of the global community. The project has focused on site preparation and Monte Carlo production. The operations group has begun processing data from P5 as part of the global data commissioning. Improvements in transfer rates and site availability have been seen as computing sites across the globe prepare for large scale production and analysis as part of CSA07. Preparations for the upcoming Computing Software and Analysis Challenge CSA07 are progressing. Ian Fisk and Neil Geddes have been appointed as coordinators for the challenge. CSA07 will include production tests of the Tier-0 production system, reprocessing at the Tier-1 sites and Monte Carlo production at the Tier-2 sites. At the same time there will be a large analysis exercise at the Tier-2 centres. Pre-production simulation of the Monte Carlo events for the challenge is beginning. Scale tests of the Tier-0 will begin in mid-July and the challenge it...

  17. COMPUTING

    CERN Multimedia

    M. Kasemann

    Introduction During the past six months, Computing participated in the STEP09 exercise, had a major involvement in the October exercise and has been working with CMS sites on improving open issues relevant for data taking. At the same time operations for MC production, real data reconstruction and re-reconstructions and data transfers at large scales were performed. STEP09 was successfully conducted in June as a joint exercise with ATLAS and the other experiments. It gave good indication about the readiness of the WLCG infrastructure with the two major LHC experiments stressing the reading, writing and processing of physics data. The October Exercise, in contrast, was conducted as an all-CMS exercise, where Physics, Computing and Offline worked on a common plan to exercise all steps to efficiently access and analyze data. As one of the major results, the CMS Tier-2s demonstrated to be fully capable for performing data analysis. In recent weeks, efforts were devoted to CMS Computing readiness. All th...

  18. COMPUTING

    CERN Multimedia

    I. Fisk

    2011-01-01

    Introduction It has been a very active quarter in Computing with interesting progress in all areas. The activity level at the computing facilities, driven by both organised processing from data operations and user analysis, has been steadily increasing. The large-scale production of simulated events that has been progressing throughout the fall is wrapping-up and reprocessing with pile-up will continue. A large reprocessing of all the proton-proton data has just been released and another will follow shortly. The number of analysis jobs by users each day, that was already hitting the computing model expectations at the time of ICHEP, is now 33% higher. We are expecting a busy holiday break to ensure samples are ready in time for the winter conferences. Heavy Ion The Tier 0 infrastructure was able to repack and promptly reconstruct heavy-ion collision data. Two copies were made of the data at CERN using a large CASTOR disk pool, and the core physics sample was replicated ...

  19. COMPUTING

    CERN Multimedia

    I. Fisk

    2012-01-01

    Introduction Computing continued with a high level of activity over the winter in preparation for conferences and the start of the 2012 run. 2012 brings new challenges with a new energy, more complex events, and the need to make the best use of the available time before the Long Shutdown. We expect to be resource constrained on all tiers of the computing system in 2012 and are working to ensure the high-priority goals of CMS are not impacted. Heavy ions After a successful 2011 heavy-ion run, the programme is moving to analysis. During the run, the CAF resources were well used for prompt analysis. Since then in 2012 on average 200 job slots have been used continuously at Vanderbilt for analysis workflows. Operations Office As of 2012, the Computing Project emphasis has moved from commissioning to operation of the various systems. This is reflected in the new organisation structure where the Facilities and Data Operations tasks have been merged into a common Operations Office, which now covers everything ...

  20. COMPUTING

    CERN Multimedia

    M. Kasemann

    CCRC’08 challenges and CSA08 During the February campaign of the Common Computing readiness challenges (CCRC’08), the CMS computing team had achieved very good results. The link between the detector site and the Tier0 was tested by gradually increasing the number of parallel transfer streams well beyond the target. Tests covered the global robustness at the Tier0, processing a massive number of very large files and with a high writing speed to tapes.  Other tests covered the links between the different Tiers of the distributed infrastructure and the pre-staging and reprocessing capacity of the Tier1’s: response time, data transfer rate and success rate for Tape to Buffer staging of files kept exclusively on Tape were measured. In all cases, coordination with the sites was efficient and no serious problem was found. These successful preparations prepared the ground for the second phase of the CCRC’08 campaign, in May. The Computing Software and Analysis challen...

  1. COMPUTING

    CERN Multimedia

    I. Fisk

    2010-01-01

    Introduction The first data taking period of November produced a first scientific paper, and this is a very satisfactory step for Computing. It also gave the invaluable opportunity to learn and debrief from this first, intense period, and make the necessary adaptations. The alarm procedures between different groups (DAQ, Physics, T0 processing, Alignment/calibration, T1 and T2 communications) have been reinforced. A major effort has also been invested into remodeling and optimizing operator tasks in all activities in Computing, in parallel with the recruitment of new Cat A operators. The teams are being completed and by mid year the new tasks will have been assigned. CRB (Computing Resource Board) The Board met twice since last CMS week. In December it reviewed the experience of the November data-taking period and could measure the positive improvements made for the site readiness. It also reviewed the policy under which Tier-2 are associated with Physics Groups. Such associations are decided twice per ye...

  2. COMPUTING

    CERN Multimedia

    M. Kasemann

    Introduction More than seventy CMS collaborators attended the Computing and Offline Workshop in San Diego, California, April 20-24th to discuss the state of readiness of software and computing for collisions. Focus and priority were given to preparations for data taking and providing room for ample dialog between groups involved in Commissioning, Data Operations, Analysis and MC Production. Throughout the workshop, aspects of software, operating procedures and issues addressing all parts of the computing model were discussed. Plans for the CMS participation in STEP’09, the combined scale testing for all four experiments due in June 2009, were refined. The article in CMS Times by Frank Wuerthwein gave a good recap of the highly collaborative atmosphere of the workshop. Many thanks to UCSD and to the organizers for taking care of this workshop, which resulted in a long list of action items and was definitely a success. A considerable amount of effort and care is invested in the estimate of the co...

  3. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  4. Ge/SiGe superlattices for nanostructured thermoelectric modules

    International Nuclear Information System (INIS)

    Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

    2013-01-01

    Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

  5. Structure of 78Ge from the 76Ge(t,p)78Ge reaction

    International Nuclear Information System (INIS)

    Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

    1978-01-01

    The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell

  6. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  7. 75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

    Science.gov (United States)

    2010-08-05

    ...] GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... of Investment Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The...

  8. COMPUTING

    CERN Multimedia

    2010-01-01

    Introduction Just two months after the “LHC First Physics” event of 30th March, the analysis of the O(200) million 7 TeV collision events in CMS accumulated during the first 60 days is well under way. The consistency of the CMS computing model has been confirmed during these first weeks of data taking. This model is based on a hierarchy of use-cases deployed between the different tiers and, in particular, the distribution of RECO data to T1s, who then serve data on request to T2s, along a topology known as “fat tree”. Indeed, during this period this model was further extended by almost full “mesh” commissioning, meaning that RECO data were shipped to T2s whenever possible, enabling additional physics analyses compared with the “fat tree” model. Computing activities at the CMS Analysis Facility (CAF) have been marked by a good time response for a load almost evenly shared between ALCA (Alignment and Calibration tasks - highest p...

  9. COMPUTING

    CERN Multimedia

    Contributions from I. Fisk

    2012-01-01

    Introduction The start of the 2012 run has been busy for Computing. We have reconstructed, archived, and served a larger sample of new data than in 2011, and we are in the process of producing an even larger new sample of simulations at 8 TeV. The running conditions and system performance are largely what was anticipated in the plan, thanks to the hard work and preparation of many people. Heavy ions Heavy Ions has been actively analysing data and preparing for conferences.  Operations Office Figure 6: Transfers from all sites in the last 90 days For ICHEP and the Upgrade efforts, we needed to produce and process record amounts of MC samples while supporting the very successful data-taking. This was a large burden, especially on the team members. Nevertheless the last three months were very successful and the total output was phenomenal, thanks to our dedicated site admins who keep the sites operational and the computing project members who spend countless hours nursing the...

  10. COMPUTING

    CERN Multimedia

    M. Kasemann

    Introduction A large fraction of the effort was focused during the last period into the preparation and monitoring of the February tests of Common VO Computing Readiness Challenge 08. CCRC08 is being run by the WLCG collaboration in two phases, between the centres and all experiments. The February test is dedicated to functionality tests, while the May challenge will consist of running at all centres and with full workflows. For this first period, a number of functionality checks of the computing power, data repositories and archives as well as network links are planned. This will help assess the reliability of the systems under a variety of loads, and identifying possible bottlenecks. Many tests are scheduled together with other VOs, allowing the full scale stress test. The data rates (writing, accessing and transfer¬ring) are being checked under a variety of loads and operating conditions, as well as the reliability and transfer rates of the links between Tier-0 and Tier-1s. In addition, the capa...

  11. COMPUTING

    CERN Multimedia

    Matthias Kasemann

    Overview The main focus during the summer was to handle data coming from the detector and to perform Monte Carlo production. The lessons learned during the CCRC and CSA08 challenges in May were addressed by dedicated PADA campaigns lead by the Integration team. Big improvements were achieved in the stability and reliability of the CMS Tier1 and Tier2 centres by regular and systematic follow-up of faults and errors with the help of the Savannah bug tracking system. In preparation for data taking the roles of a Computing Run Coordinator and regular computing shifts monitoring the services and infrastructure as well as interfacing to the data operations tasks are being defined. The shift plan until the end of 2008 is being put together. User support worked on documentation and organized several training sessions. The ECoM task force delivered the report on “Use Cases for Start-up of pp Data-Taking” with recommendations and a set of tests to be performed for trigger rates much higher than the ...

  12. COMPUTING

    CERN Multimedia

    P. MacBride

    The Computing Software and Analysis Challenge CSA07 has been the main focus of the Computing Project for the past few months. Activities began over the summer with the preparation of the Monte Carlo data sets for the challenge and tests of the new production system at the Tier-0 at CERN. The pre-challenge Monte Carlo production was done in several steps: physics generation, detector simulation, digitization, conversion to RAW format and the samples were run through the High Level Trigger (HLT). The data was then merged into three "Soups": Chowder (ALPGEN), Stew (Filtered Pythia) and Gumbo (Pythia). The challenge officially started when the first Chowder events were reconstructed on the Tier-0 on October 3rd. The data operations teams were very busy during the the challenge period. The MC production teams continued with signal production and processing while the Tier-0 and Tier-1 teams worked on splitting the Soups into Primary Data Sets (PDS), reconstruction and skimming. The storage sys...

  13. COMPUTING

    CERN Multimedia

    I. Fisk

    2013-01-01

    Computing operation has been lower as the Run 1 samples are completing and smaller samples for upgrades and preparations are ramping up. Much of the computing activity is focusing on preparations for Run 2 and improvements in data access and flexibility of using resources. Operations Office Data processing was slow in the second half of 2013 with only the legacy re-reconstruction pass of 2011 data being processed at the sites.   Figure 1: MC production and processing was more in demand with a peak of over 750 Million GEN-SIM events in a single month.   Figure 2: The transfer system worked reliably and efficiently and transferred on average close to 520 TB per week with peaks at close to 1.2 PB.   Figure 3: The volume of data moved between CMS sites in the last six months   The tape utilisation was a focus for the operation teams with frequent deletion campaigns from deprecated 7 TeV MC GEN-SIM samples to INVALID datasets, which could be cleaned up...

  14. COMPUTING

    CERN Multimedia

    I. Fisk

    2012-01-01

      Introduction Computing activity has been running at a sustained, high rate as we collect data at high luminosity, process simulation, and begin to process the parked data. The system is functional, though a number of improvements are planned during LS1. Many of the changes will impact users, we hope only in positive ways. We are trying to improve the distributed analysis tools as well as the ability to access more data samples more transparently.  Operations Office Figure 2: Number of events per month, for 2012 Since the June CMS Week, Computing Operations teams successfully completed data re-reconstruction passes and finished the CMSSW_53X MC campaign with over three billion events available in AOD format. Recorded data was successfully processed in parallel, exceeding 1.2 billion raw physics events per month for the first time in October 2012 due to the increase in data-parking rate. In parallel, large efforts were dedicated to WMAgent development and integrati...

  15. Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications

    Science.gov (United States)

    Privitera, S. M. S.; Sousa, V.; Bongiorno, C.; Navarro, G.; Sabbione, C.; Carria, E.; Rimini, E.

    2018-04-01

    The atomic diffusion and compositional variations upon melting have been studied by transmission electron microscopy and electron energy loss spectroscopy in Ge rich GeSbTe films, with a composition optimized for memory applications. Melting and quenching has been achieved by laser pulses, in order to study pure thermal diffusion without electric field induced electromigration. The effect of different laser energy densities has been investigated. The diffusion of Ge atoms in the molten phase is found to be a prominent mechanism and, by employing finite elements computational analysis, a diffusion coefficient of Ge on the order of 5  ×  10-5 cm2 s-1 has been estimated.

  16. COMPUTING

    CERN Multimedia

    I. Fisk

    2011-01-01

    Introduction The Computing Team successfully completed the storage, initial processing, and distribution for analysis of proton-proton data in 2011. There are still a variety of activities ongoing to support winter conference activities and preparations for 2012. Heavy ions The heavy-ion run for 2011 started in early November and has already demonstrated good machine performance and success of some of the more advanced workflows planned for 2011. Data collection will continue until early December. Facilities and Infrastructure Operations Operational and deployment support for WMAgent and WorkQueue+Request Manager components, routinely used in production by Data Operations, are provided. The GlideInWMS and components installation are now deployed at CERN, which is added to the GlideInWMS factory placed in the US. There has been new operational collaboration between the CERN team and the UCSD GlideIn factory operators, covering each others time zones by monitoring/debugging pilot jobs sent from the facto...

  17. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Science.gov (United States)

    Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

    2017-11-01

    In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  18. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Directory of Open Access Journals (Sweden)

    Abd Rahim Alhan Farhanah

    2017-01-01

    Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  19. (113) Facets of Si-Ge/Si Islands; Atomic Scale Simulation

    Science.gov (United States)

    Kassem, Hassan

    We have studied, by computer simulation, some static and vibrationnal proprieties of SiGe/Si islands. We have used a Valence Force Field combined to Monte Carlo technique to study the growth of Ge and SiGe on (001)Si substrates. We have focalised on the case of large pyramidal islands presenting (113) facets on the free (001)Si surface with various non uniform composition inside the islands. The deformation inside the islands and Raman spectroscopy are discussed.

  20. Ge-Au eutectic bonding of Ge (100) single crystals

    International Nuclear Information System (INIS)

    Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

    1993-01-01

    The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

  1. Computational assessment of promising mid-infrared nonlinear optical materials Mg–IV–V2 (IV = Si, Ge, Sn; V = P, As): a first-principles study

    Science.gov (United States)

    Xiao, Jianping; Zhu, Shifu; Zhao, Beijun; Chen, Baojun; Liu, Hui; He, Zhiyu

    2018-03-01

    The mid-infrared (mid-IR) nonlinear optical (NLO) capabilities of Mg–IV–V2 (IV = Si, Ge, Sn; V = P, As) are systematically assessed by the first-principles calculation. The results show that the compounds in this group except MgSiP2 and MgSnP2 have moderate birefringence values to fulfill the phase-matching conditions. In particular, MgGeP2 and MgSiAs2 possess relatively large band gaps and almost three to four times larger static SHG coefficients than the benchmark material AgGaSe2, exhibiting good potential for mid-IR NLO application. According to the detailed analysis of the electronic structures, it is found that the dominant SHG contributions are from the orbitals of the asymmetry anionic unit [IV–V2]2‑. Moreover, the further evaluation reveals that MgSiAs2, MgGeAs2, MgSnP2 and MgSnAs2 are not thermodynamically stable and the new synthesis strategy (i.e. synthesis under non-equilibrium conditions) should be considered.

  2. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  3. COMPUTING

    CERN Multimedia

    M. Kasemann

    CMS relies on a well functioning, distributed computing infrastructure. The Site Availability Monitoring (SAM) and the Job Robot submission have been very instrumental for site commissioning in order to increase availability of more sites such that they are available to participate in CSA07 and are ready to be used for analysis. The commissioning process has been further developed, including "lessons learned" documentation via the CMS twiki. Recently the visualization, presentation and summarizing of SAM tests for sites has been redesigned, it is now developed by the central ARDA project of WLCG. Work to test the new gLite Workload Management System was performed; a 4 times increase in throughput with respect to LCG Resource Broker is observed. CMS has designed and launched a new-generation traffic load generator called "LoadTest" to commission and to keep exercised all data transfer routes in the CMS PhE-DEx topology. Since mid-February, a transfer volume of about 12 P...

  4. Uniaxially stressed Ge:Ga and Ge:Be

    Energy Technology Data Exchange (ETDEWEB)

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1992-12-01

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  5. Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

    Science.gov (United States)

    Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

    2017-10-30

    We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

  6. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  7. <300> GeV team

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    The 300 GeV team had been assembled. In the photograph are Hans Horisberger, Clemens Zettler, Roy Billinge, Norman Blackburne, John Adams, Hans-Otto Wuster, Lars Persson, Bas de Raad, Hans Goebel, Simon Van der Meer.

  8. HPC4Energy Final Report : GE Energy

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Steven G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Van Zandt, Devin T. [GE Energy Consulting, Schenectady, NY (United States); Thomas, Brian [GE Energy Consulting, Schenectady, NY (United States); Mahmood, Sajjad [GE Energy Consulting, Schenectady, NY (United States); Woodward, Carol S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-02-25

    Power System planning tools are being used today to simulate systems that are far larger and more complex than just a few years ago. Advances in renewable technologies and more pervasive control technology are driving planning engineers to analyze an increasing number of scenarios and system models with much more detailed network representations. Although the speed of individual CPU’s has increased roughly according to Moore’s Law, the requirements for advanced models, increased system sizes, and larger sensitivities have outstripped CPU performance. This computational dilemma has reached a critical point and the industry needs to develop the technology to accurately model the power system of the future. The hpc4energy incubator program provided a unique opportunity to leverage the HPC resources available to LLNL and the power systems domain expertise of GE Energy to enhance the GE Concorda PSLF software. Well over 500 users worldwide, including all of the major California electric utilities, rely on Concorda PSLF software for their power flow and dynamics. This pilot project demonstrated that the GE Concorda PSLF software can perform contingency analysis in a massively parallel environment to significantly reduce the time to results. An analysis with 4,127 contingencies that would take 24 days on a single core was reduced to 24 minutes when run on 4,217 cores. A secondary goal of this project was to develop and test modeling techniques that will expand the computational capability of PSLF to efficiently deal with systems sizes greater than 150,000 buses. Toward this goal the matrix reordering implementation time was sped up 9.5 times by optimizing the code and introducing threading.

  9. Oxygen transport and GeO2 stability during thermal oxidation of Ge

    Science.gov (United States)

    da Silva, S. R. M.; Rolim, G. K.; Soares, G. V.; Baumvol, I. J. R.; Krug, C.; Miotti, L.; Freire, F. L.; da Costa, M. E. H. M.; Radtke, C.

    2012-05-01

    Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption.

  10. Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

    International Nuclear Information System (INIS)

    Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

    2008-01-01

    Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

  11. Isomeric rations study for the α + 70 Ge

    International Nuclear Information System (INIS)

    Hora Villano, M.H. da.

    1984-12-01

    Isomeric ratios for 73 Se F,I produced in the reaction α + 70 Ge with incidence laboratory energy ranging from 8 to 28 MeV, have been measured using off-line γ-ray spectroscopy. Relative formation cross-section for isomeric and ground states were obtained with NAT Ge targets. Compound nucleus statistical analyses were performed using computer codes Alice and Julian. Unlike to Alice code, the Julian code predictions agreed quite well with the experimental results. This agreement may be explained by the inclusion of the γ competition in the deexcitation channels of the compound nucleus and by the correct level density calculation of the emission probabilities in the Julian code. Finally angular momentum populations for isomers formations in the reaction 70 Ge(α, n) 73 have been determined. (author)

  12. Toepassing geïntegreerde maatregelen geïnvestariseerd

    NARCIS (Netherlands)

    Heijne, B.

    2009-01-01

    Kennis over 'good practices' en 'best practices' van geïntegreerde bedrijfsstrategieën verspreidt zich snel over Europa. Dat is één van de conclusies van een inventarisatie binnen het project Endure. Het aanplanten van minder vatbare of resistente rassen blijkt weinig toegepast te worden in de

  13. Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Feng Song; Gao Yong; Yang Yuan [Department of Electronic Engineering, Xi' an University of Technology, Xi' an 710048 (China); Feng Yuchun, E-mail: vonfs@yahoo.com.c [Key Laboratories of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen 518060 (China)

    2009-08-15

    The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structures of SiGe-OI rib optical waveguides are built and analyzed with Optiwave software, and the optical field and transmission losses of the SiGe-OI rib optical waveguides are analyzed. The optimization results show that when the structure parameters H, h, W are respectively 500 nm, 250 nm, 500 nm and the Ge content is 5%, the total power loss of SiGe-OI rib waveguides is 0.3683 dB/cm considering the loss of radiation outside the waveguides and materials, which is less than the traditional value of 0.5 dB/cm. The analytical technique for SiGe-OI optical waveguides and structure parameters computed by this paper are proved to be accurate and computationally efficient compared with the beam propagation method (BPM) and the experimental results. (semiconductor devices)

  14. Neutron transmutation doped Ge bolometers

    Science.gov (United States)

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  15. GE Healthcare | College of Engineering & Applied Science

    Science.gov (United States)

    Olympiad Girls Who Code Club FIRST Tech Challenge NSF I-Corps Site of Southeastern Wisconsin UW-Milwaukee ; Talent GE Healthcare is the founding partner of the Center for Advanced Embedded Systems (CAES), formerly GE Healthcare's needs for talent. Business Corporate Partners ANSYS Institute GE Healthcare Catalyst

  16. Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

    Energy Technology Data Exchange (ETDEWEB)

    Xu, L.; Li, Y.; Yu, N. N.; Zhong, Y. P.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-01-19

    We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.

  17. Ab initio treatment of gas phase GeO{sup 2+} doubly charged ion

    Energy Technology Data Exchange (ETDEWEB)

    Mogren Al Mogren, M. [Chemistry Department, Faculty of Science, King Saud University, PO Box 2455, Riyadh 11451 (Saudi Arabia); Ben Abdallah, D. [Laboratoire de Spectroscopie Atomique, Moléculaire et Applications – LSAMA, Université de Tunis, Tunis (Tunisia); Department of General Studies, Riyadh Corporation of Technology, Technical and Vocational Training Corporation, PO Box 42826, Riyadh 11551 (Saudi Arabia); Hochlaf, M., E-mail: hochlaf@univ-mlv.fr [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, MSME UMR 8208 CNRS, 5 bd Descartes, 77454 Marne-la-Vallée (France)

    2015-01-13

    Highlights: • Theoretical investigation of the novel gas-phase molecular species GeO{sup 2+}. • Spectroscopic parameters of this dication in its electronic ground and exited states. • Theoretical double ionization spectrum of GeO. - Abstract: Using multi reference configuration interaction methodology in connection with a large basis set, we show that GeO{sup 2+} is a metastable species either in the ground or in the electronically excited states. This confirms the observation of this dication in gas phase by mass spectrometry. In addition, we derived a set of accurate spectroscopic terms for GeO{sup 2+} bound states. At the MRCI/aug-cc-pV5Z level of theory, the adiabatic double ionization energy of GeO is computed to be ∼28.93 eV.

  18. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  19. Magnetic properties of ultrathin Co/Ge(111) and Co/Ge(100) films

    International Nuclear Information System (INIS)

    Cheng, W. C.; Tsay, J. S.; Yao, Y. D.; Lin, K. C.; Yang, C. S.; Lee, S. F.; Tseng, T. K.; Neih, H. Y.

    2001-01-01

    The orientation of the magnetization and the occurrence of interfacial ferromagnetic inactive layers for ultrathin Co films grown on Ge(111) and Ge(100) surfaces have been studied using the in situ surface magneto-optic Kerr effect. On a Ge(111) substrate, cobalt films (≤28 monolayers) with in-plane easy axis of magnetization have been observed; however, on a Ge(100) substrate, ultrathin Co films (14 - 16 monolayers) with canted out-of-plane easy axis of magnetization were measured. The ferromagnetic inactive layers were formed due to the intermixing of Co and Ge and lowering the Curie temperature by reducing Co film thickness. The Co - Ge compound inactive layers were 3.8 monolayers thick for Co films grown on Ge(111) and 6.2 monolayers thick for Co films deposited on Ge(100). This is attributed to the difference of the density of surface atoms on Ge(111) and Ge(100). [copyright] 2001 American Institute of Physics

  20. Dipole Resonances of 76Ge

    Science.gov (United States)

    Ilieva, R. S.; Cooper, N.; Werner, V.; Rusev, G.; Pietralla, N.; Kelly, J. H.; Tornow, W.; Yates, S. W.; Crider, B. P.; Peters, E.

    2013-10-01

    Dipole resonances in 76Ge have been studied using the method of Nuclear Resonance Fluorescence (NRF). The experiment was performed using the Free Electron Laser facility at HI γS/TUNL, which produced linearly polarised quasi-monoenergetic photons in the 4-9 MeV energy range. Photon strength, in particular dipole strength, is an important ingredient in nuclear reaction calculations, and recent interest in its study has been stimulated by observations of a pygmy dipole resonance near the neutron separation energy Sn of certain nuclei. Furthermore, 76Ge is a candidate for 0 ν 2 β -decay. The results are complimentary to a relevant experiment done at TU Darmstadt using Bremsstrahlung beams. Single-resonance parities and a preliminary estimate of the total photo-excitation cross section will be presented. This work was supported by the U.S. DOE under grant no. DE-FG02-91ER40609.

  1. Energy loss of muons in the energy range 1-10000 GeV

    International Nuclear Information System (INIS)

    Lohmann, W.; Kopp, R.; Voss, R.

    1985-01-01

    A summary is given of the most recent formulae for the cross-sections contributing to the energy loss of muons in matter, notably due to electro-magnetic interactions (ionization, bremsstrahlung and electron-pair production) and nuclear interactions. Computed energy losses dE/dx are tabulated for muons with energy between 1 GeV and 10,000 GeV in a number of materials commonly used in high-energy physics experiments. In comparison with earlier tables, these show deviations that grow with energy and amount to several per cent at 200 GeV muon energy. (orig.)

  2. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    International Nuclear Information System (INIS)

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  3. Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure

    International Nuclear Information System (INIS)

    Yuan, C L; Lee, P S

    2008-01-01

    A Ge/GeO 2 core/shell nanostructure embedded in an Al 2 O 3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO 2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO 2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering

  4. Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

    Science.gov (United States)

    Yuan, C L; Lee, P S

    2008-09-03

    A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

  5. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

    Science.gov (United States)

    Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

    2017-12-01

    Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

  6. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

    OpenAIRE

    Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

    2017-01-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

  7. GE's advanced nuclear reactor designs

    International Nuclear Information System (INIS)

    Berglund, R.C.

    1993-01-01

    The excess of US electrical generating capacity which has existed for the past 15 years is coming to an end as we enter the 1990s. Environmental and energy security issues associated with fossil fuels are kindling renewed interest in the nuclear option. The importance of these issues are underscored by the National Energy Strategy (NES) which calls for actions which open-quotes are designed to ensure that the nuclear power option is available to utilities.close quotes Utilities, utility associations, and nuclear suppliers, under the leadership of the Nuclear Power Oversight Committee (NPOC), have jointly developed a 14-point strategic plan aimed at establishing a predictable regulatory environment, standardized and pre-licensed Advanced Light Water Reactor (ALWR) nuclear plants, resolving the long-term waste management issue, and other open-quotes enabling conditions.close quotes GE is participating in this national effort and GE's family of advanced nuclear power plants feature two reactor designs, developed on a common technology base, aimed at providing a new generation of nuclear plants to provide safe, clean, economical electricity to the world's utilities in the 1990s and beyond. Together, the large-size (1300 MWe) Advanced Boiling Water Reactor (ABWR) and the small-size (600 MWe) Simplified Boiling Water Reactor (SBWR) are innovative, near-term candidates for expanding electrical generating capacity in the US and worldwide. Both possess the features necessary to do so safety, reliably, and economically

  8. Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

    Science.gov (United States)

    Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

    2018-01-01

    Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

  9. Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

    Science.gov (United States)

    Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

    2015-01-01

    The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

  10. Room Temperature Ferromagnetic Mn:Ge(001

    Directory of Open Access Journals (Sweden)

    George Adrian Lungu

    2013-12-01

    Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

  11. The study on Ge-68 production

    International Nuclear Information System (INIS)

    Yang, Seung Dae; Kim, Sang Wook; Hur, Min Goo

    2009-06-01

    The Ge-68 is a correction source of PET and is used in radiopharmaceuticals synthesis. This project is mainly aimed to produce the Ge-68. Based on this project results, the local Ge-68 production can be possible and the revitalization of the radioisotope utilization research areas can be accomplished. The characteristics of the Ge-68 and Ga-68 are obtained and analyzed. The production conditions are also developed, and the domestic and overseas status of the art are considered. The stacked foil target is designed using Al disc and dried Ga 2 O 3 powder, and the irradiation target is also designed. The cross section of the nat. Ga(p,xn) 68 Ge reaction is obtained using the developed target. The separation experiment of cold Ge/Ga in the H 2 SO 4 -HCl solution are carried out as a simulation experiment of the radioactive Ge/Ga sources. The separation of Ge/Ga by liquid extraction of CCl 4 in 8M HCl is also accomplished. And the synthesis experiment of the Hematophorphyrin-Ga complex is performed

  12. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

  13. Growth and characterization of isotopically enriched 70Ge and 74Ge single crystals

    International Nuclear Information System (INIS)

    Itoh, K.

    1992-10-01

    Isotopically enriched 70 Ge and 74 Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm 3 volume. To our knowledge, we have grown the first 70 Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be ∼2 x cm -3 which is two order of magnitude better that of 74 Ge crystals previously grown by two different groups. Isotopic enrichment of the 70 Ge and the 74 Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed

  14. Dimorphism in La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}? How exploratory syntheses led to surprising new finds in the La-Ge and Ce-Ge binary phase diagrams

    Energy Technology Data Exchange (ETDEWEB)

    Suen, Nian-Tzu; Bobev, Svilen [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE (United States)

    2014-04-15

    Reported are the synthesis, the crystal structures, and the electronic structures of two new tetragonal phases, La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}. Both title compounds crystallize in the Pu{sub 5}Rh{sub 3} (P4/ncc) structure type, which has close structural relationship with the W{sub 5}Si{sub 3} (I4/mcm) structure type. The synthetic results, supported by thermal analysis suggest that this tetragonal phase is only stable at relatively low temperature and it transforms to the hexagonal form (Mn{sub 5}Si{sub 3} structure type, P6{sub 3}/mcm) at above 850 C. The structural relationship between La{sub 5}Ge{sub 3} (Pu{sub 5}Rh{sub 3} type) and La{sub 5}Sn{sub 3} (W{sub 5}Si{sub 3} type) is discussed as well. Temperature dependent DC magnetization and resistivity measurements indicate that the tetragonal phase La{sub 5}Ge{sub 3} exhibits Pauli-like paramagnetism and is a good metallic conductor. For the tetragonal phase Ce{sub 5}Ge{sub 3}, the magnetic behavior obeys the Curie-Weiss law in the high-temperature regime, while it deviates from the Curie-Weiss law at low temperature. No long-range magnetic ordering was observed down to 5 K, although short-range correlations can be inferred below ca. 50 K. The resistivity measurements of Ce{sub 5}Ge{sub 3} also show metallic-like temperature dependence, although the low-temperature behavior resembling a T{sup 2} law could signify anomalous electron-scattering (e.g., Kondo-like effect). The electronic structures of multiple phases with the same nominal compositions, computed by the TB-LMTO-ASA method, are compared and discussed. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. From X-Rays to MRI: Physics in GE

    Science.gov (United States)

    Schmitt, Roland W.

    2004-03-01

    The GE Research Laboratory, founded in 1900, became the first laboratory of scientific research in U.S. industry. William Coolidge, a physicist, joined the laboratory in 1905 and produced two advances of immense importance. The first, ductile tungsten, is still the heart of every incandescent light bulb. The second, the "Coolidge" X-Ray tube, remains an essential tool of modern medicine. In the process, Coolidge explored two main approaches of physics in industry. One addresses a commercial problem or opportunity (better light bulbs) and finds interesting physics. The other explores interesting physics (X-rays) and creates a commercial opportunity. This paper addresses the mix of these approaches during GE's years as an "electric" (and therefore physics-based) company. Episodes include the following: the work of Irving Langmuir (1932 Nobel laureate in chemistry, but as much physicist as chemist); the post-World War II "golden age of industrial physics" when the endless frontier offered opportunities from nuclear power to diamond making to superconductivity; the Nobel-prize winning work of Ivar Giaever; and interdisciplinary efforts that enabled GE to become a world business leader in two medical diagnostic technologies it did not invent: computed tomography and magnetic resonance imaging. I will speculate on whether this mix of problem-driven and opportunity-driven effort is as relevant to the 21st century as it was to the 20th.

  16. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  17. Nuclear energy outlook: a GE perspective

    International Nuclear Information System (INIS)

    Fuller, J.

    2006-01-01

    Full text: Full text: As one of the world's leading suppliers of power generation and energy delivery technologies, GE Energy provides comprehensive solutions for coal, oil, natural gas and nuclear energy; renewable resources such as wind, solar and biogas, along with other alternative fuels. With the ever increasing demand for energy and pressures to decrease greenhouse gas emissions, global trends indicate a move towards building more base line nuclear generation capacity. As a reliable, cost-competitive option for commercial power generation, nuclear energy also addresses many of the issues the world faces when it comes to the environment. Since developing nuclear reactor technology in the 1950s, GE's Boiling Water Reactor (BWR) technology accounts for more than 90 operating plants in the world today. Building on that success, GE's ABWR design is now the first and only Generation 111 nuclear reactor in operation today. This advanced reactor technology, coupled with current construction experience and a qualified global supply chain, make ESBWR, GE's Generation III+ reactor design, an attractive option for owners considering adding nuclear generation capacity. In pursuit of new technologies, GE has teamed with Silex to develop, commercialize and license third generation laser enrichment technology. By acquiring the exclusive rights to develop and commercialize this technology, GE is positioned to support the anticipated global demands for enriched uranium. At GE, we are continuing to develop imaginative ideas and investing in products that are cost effective, increase productivity, limit greenhouse gas emissions, and improve safety and security for our customers

  18. Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

    Science.gov (United States)

    Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

    2014-03-01

    The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

  19. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

    International Nuclear Information System (INIS)

    Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

    2007-01-01

    The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

  20. Thermal conductivity of sputtered amorphous Ge films

    International Nuclear Information System (INIS)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-01-01

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids

  1. GeV electron microtron

    International Nuclear Information System (INIS)

    Anon.

    1980-01-01

    A strong consensus has developed recently in the nuclear physics community that research with electromagnetic probes in the 1 to 2 GeV range generated by a high current 100% duty factor electron accelerator represents an exciting new frontier. Because of this rapidly growing interest, a design group of 5 ANL physicists and accelerator specialists recently reviewed developments in accelerator technology and developed conceptual designs for technical evaluation and subsequent cost analysis. Exploratory designs were developed for two concepts, the linac-stretcher ring and a modified microtron system. These were used to make a critical comparison of the two conceptual designs along with an improved microtron design, the double-sided microtron. The results are presented in Table VIII-I. The double-sided microtron shows promise for development into a substantially less expensive facility than a linac-ring system, but its technical feasibility remains to be established. The potential savings in capital cost are large for the microtron system, perhaps $10 million. They dictate that in the absence of a major technical limitation the double-sided microtron is the preferred design

  2. GeNemo: a search engine for web-based functional genomic data.

    Science.gov (United States)

    Zhang, Yongqing; Cao, Xiaoyi; Zhong, Sheng

    2016-07-08

    A set of new data types emerged from functional genomic assays, including ChIP-seq, DNase-seq, FAIRE-seq and others. The results are typically stored as genome-wide intensities (WIG/bigWig files) or functional genomic regions (peak/BED files). These data types present new challenges to big data science. Here, we present GeNemo, a web-based search engine for functional genomic data. GeNemo searches user-input data against online functional genomic datasets, including the entire collection of ENCODE and mouse ENCODE datasets. Unlike text-based search engines, GeNemo's searches are based on pattern matching of functional genomic regions. This distinguishes GeNemo from text or DNA sequence searches. The user can input any complete or partial functional genomic dataset, for example, a binding intensity file (bigWig) or a peak file. GeNemo reports any genomic regions, ranging from hundred bases to hundred thousand bases, from any of the online ENCODE datasets that share similar functional (binding, modification, accessibility) patterns. This is enabled by a Markov Chain Monte Carlo-based maximization process, executed on up to 24 parallel computing threads. By clicking on a search result, the user can visually compare her/his data with the found datasets and navigate the identified genomic regions. GeNemo is available at www.genemo.org. © The Author(s) 2016. Published by Oxford University Press on behalf of Nucleic Acids Research.

  3. Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

    International Nuclear Information System (INIS)

    Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

    2015-01-01

    While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

  4. Experimental determination of the Ta–Ge phase diagram

    Energy Technology Data Exchange (ETDEWEB)

    Araújo Pinto da Silva, Antonio Augusto, E-mail: aaaps@ppgem.eel.usp.br [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Coelho, Gilberto Carvalho [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); UniFoa – Centro Universitário de Volta Redonda, Núcleo de Pesquisa, Campus Três Poços, Avenida Paulo Erlei Alves Abrantes, 1325, Bairro Três Poços, 27240-560 Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Suzuki, Paulo Atsushi [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Fiorani, Jean Marc; David, Nicolas; Vilasi, Michel [Université de Lorraine, Institut Jean Lamour, Faculté des Sciences et Technologies, BP 70239, F-54506 Vandoeuvre-lès-Nancy (France)

    2013-11-05

    Highlights: •Ta–Ge phase diagram propose for the first time. •The phase αTa{sub 5}Ge{sub 3} was not observed in samples investigated in this work. •Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. -- Abstract: In the present work, the Ta–Ge phase diagram has been experimentally studied, considering the inexistence of a Ta–Ge phase diagram in the literature. The samples were prepared via arc melting and characterized by Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray Diffraction (XRD). The intermetallics phases βTa{sub 3}Ge, αTa{sub 3}Ge, βTa{sub 5}Ge{sub 3} and TaGe{sub 2} where confirmed in this system. Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. The phases βTa{sub 3}Ge and βTa{sub 5}Ge{sub 3} solidifies congruently while TaGe{sub 2} is formed through a peritectic transformation. The temperature of the Ta-rich eutectic (L ↔ Ta{sub ss} + βTa{sub 3}Ge) was measured by the Pirani-Alterthum method at 2440 °C and the Ge-rich eutectic (L ↔ TaGe{sub 2} + Ge{sub ss}) by DTA at 937 °C.

  5. Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation

    International Nuclear Information System (INIS)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Xiong, Yuhua; Zhang, Jing; Zhao, Chao

    2015-01-01

    Highlights: • The dominant key to achieve superior Ge passivation by GeO x is investigated. • The interface state density decreases with increasing the GeO x thickness. • The Ge 3+ oxide component is the dominant key to passivate the Ge surface. • The atomic structure at the GeO x /Ge interface is built by XPS. - Abstract: The dominant key to achieve superior Ge surface passivation by GeO x interfacial layer is investigated based on ozone oxidation. The interface state density (D it ) measured from low temperature conduction method is found to decrease with increasing the GeO x thickness (0.26–1.06 nm). The X-ray photoelectron spectroscopy (XPS) is employed to demonstrate the interfacial structure of GeO x /Ge with different GeO x thicknesses. And the XPS results show that Ge 3+ oxide component is responsible to the decrease of the D it due to the effective passivation of Ge dangling bonds. Therefore, the formation of Ge 3+ component is the dominant key to achieve low D it for Ge gate stacks. Our work confirms that the same physical mechanism determines the Ge surface passivation by the GeO x regardless of the oxidation methods to grow the GeO x interfacial layer. As a result, to explore a growth process that can realize sufficient Ge 3+ component in the GeO x interlayer as thin as possible is important to achieve both equivalent oxide thickness scaling and superior interfacial property simultaneously. This conclusion is helpful to engineer the optimization of the Ge gate stacks.

  6. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  7. Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

    International Nuclear Information System (INIS)

    Liu, Jifeng; Kimerling, Lionel C; Michel, Jurgen

    2012-01-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic–photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500–1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  8. Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

    International Nuclear Information System (INIS)

    Kutsenok, N.L.; Yanson, T.I.

    1987-01-01

    X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

  9. Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

    Science.gov (United States)

    Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

    2017-07-01

    Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

  10. Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

    Science.gov (United States)

    Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

    2012-02-01

    High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

  11. Electron Transport Properties of Ge nanowires

    Science.gov (United States)

    Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

    2003-03-01

    Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

  12. Ge extraction from gasification fly ash

    Energy Technology Data Exchange (ETDEWEB)

    Oriol Font; Xavier Querol; Angel Lopez-Soler; Jose M. Chimenos; Ana I. Fernandez; Silvia Burgos; Francisco Garcia Pena [Institute of Earth Sciences ' Jaume Almera' , Barcelona (Spain)

    2005-08-01

    Water-soluble germanium species (GeS{sub 2}, GeS and hexagonal-GeO{sub 2}) are generated during coal gasification and retained in fly ash. This fact together with the high market value of this element and the relatively high contents in the fly ashes of the Puertollano Integrated Gasification in Combined Cycle (IGCC) plant directed our research towards the development of an extraction process for this element. Major objectives of this research was to find a low cost and environmentally suitable process. Several water based extraction tests were carried out using different Puertollano IGCC fly ash samples, under different temperatures, water/fly ash ratios, and extraction times. High Ge extraction yields (up to 84%) were obtained at room temperature (25{sup o}C) but also high proportions of other trace elements (impurities) were simultaneously extracted. Increasing the extraction temperature to 50, 90 and 150{sup o}C, Ge extraction yields were kept at similar levels, while reducing the content of impurities, the water/fly ash ratio and extraction time. The experimental data point out the influence of chloride, calcium and sulphide dissolutions on the Ge extraction. 16 refs., 9 figs., 6 tabs.

  13. Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

    International Nuclear Information System (INIS)

    Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

    2014-01-01

    Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3

  14. One-step Ge/Si epitaxial growth.

    Science.gov (United States)

    Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

    2011-07-01

    Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

  15. Self organized formation of Ge nanocrystals in multilayers

    OpenAIRE

    Zschintzsch-Dias, Manuel

    2012-01-01

    The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated...

  16. Partial-wave analyses of hadron scattering below 2 GeV

    International Nuclear Information System (INIS)

    Arndt, R.A.; Roper, L.D.

    1990-01-01

    The Center for Analysis of Particle Scattering (CAPS) in the Department of Physics at Virginia Polytechnic Institute and State University has analyzed basic two-body hadron reactions below 2 GeV for the last two decades. Reactions studied were nucleon-nucleon, pion-nucleon, K + -nucleon and pion photoproduction systems. In addition to analyses of these systems, a computer graphics system (SAID) has been developed and disseminated to over 200 research institutions using VAX computers. 8 refs

  17. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  18. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  19. Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

    Science.gov (United States)

    Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

    2018-01-01

    The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

  20. Digital computers in action

    CERN Document Server

    Booth, A D

    1965-01-01

    Digital Computers in Action is an introduction to the basics of digital computers as well as their programming and various applications in fields such as mathematics, science, engineering, economics, medicine, and law. Other topics include engineering automation, process control, special purpose games-playing devices, machine translation and mechanized linguistics, and information retrieval. This book consists of 14 chapters and begins by discussing the history of computers, from the idea of performing complex arithmetical calculations to the emergence of a modern view of the structure of a ge

  1. Multifunctional Binary Monolayers Ge xP y: Tunable Band Gap, Ferromagnetism, and Photocatalyst for Water Splitting.

    Science.gov (United States)

    Li, Pengfei; Zhang, Wei; Li, Dongdong; Liang, Changhao; Zeng, Xiao Cheng

    2018-06-04

    The most stable structures of two-dimensional Ge x P y and Ge x As y monolayers with different stoichiometries (e.g., GeP, GeP 2 , and GeP 3 ) are explored systematically through the combination of the particle-swarm optimization technique and density functional theory optimization. For GeP 3 , we show that the newly predicted most stable C2/ m structure is 0.16 eV/atom lower in energy than the state-of-the-art P3̅m1 structure reported previously ( Nano Lett. 2017, 17, 1833). The computed electronic band structures suggest that all the stable and metastable monolayers of Ge x P y are semiconductors with highly tunable band gaps under the biaxial strain, allowing strain engineering of their band gaps within nearly the whole visible-light range. More interestingly, the hole doping can convert the C2/ m GeP 3 monolayer from nonmagnetic to ferromagnetic because of its unique valence band structure. For the GeP 2 monolayer, the predicted most stable Pmc2 1 structure is a (quasi) direct-gap semiconductor that possesses a high electron mobility of ∼800 cm 2 V -1 s -1 along the k a direction, which is much higher than that of MoS 2 (∼200 cm 2 V -1 s -1 ). More importantly, the Pmc2 1 GeP 2 monolayer not only can serve as an n-type channel material in field-effect transistors but also can be an effective catalyst for splitting water.

  2. Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

    Energy Technology Data Exchange (ETDEWEB)

    Facetti, J F; Vallejos, A [Asuncion Naciona Univ. (Paraguay). Inst. de Ciencias

    1971-01-01

    Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions.

  3. The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

    International Nuclear Information System (INIS)

    Mahmodi, H.; Hashim, M. R.

    2010-01-01

    In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

  4. Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

    International Nuclear Information System (INIS)

    Facetti, J.F.; Vallejos, A.

    1971-01-01

    Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions

  5. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    International Nuclear Information System (INIS)

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  6. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  7. The gastroesophageal (GE) scintiscan in detection of GE reflux and pulmonary aspiration in children

    International Nuclear Information System (INIS)

    Arasu, T.S.; Franken, E.A.; Wyllie, R.; Eigen, H.; Grosfeld, J.L.; Siddiqui, A.R.; Fitzgerald, J.F.

    1980-01-01

    Gastroesophageal scintiscans and barium examinations were performed on 30 children with documented GE reflux and 13 control patients. After instillation of 2 mCi of Tc99m sulfur colloid into the stomach, serial images of the abdomen and thorax were obtained. The GE scintiscan was positive in 17 of 30 with GE reflux; the barium study was positive in 15 of 30. A positive scintiscan and/or barium study was found in 21 of 30 patients with reflux, and none of the controls. Pulmonay aspiration of gastric contents was not detected by either method. We conclude that the GE scintiscan is complementary to barium studies in the diagnosis of GE reflux, and neither study approaches the accuracy of more sophisticated tests [fr

  8. 70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

    International Nuclear Information System (INIS)

    Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

    1978-01-01

    The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape

  9. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

    Science.gov (United States)

    Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

    2018-05-01

    We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

  10. Magnetic properties of TbTiGe

    International Nuclear Information System (INIS)

    Prokes, K.; Tegus, O.; Brueck, E.; Gortenmulder, T.J.; Boer, F.R. de; Buschow, K.H.J.

    2001-01-01

    We have studied the magnetic properties of the compound TbTiGe by means of neutron diffraction in the temperature range 1.7-310 K. We also report on magnetization measurements made at different temperatures and fields. The compound TbTiGe adopts the tetragonal CeFeSi-structure type and orders antiferromagnetically at T N =286 K. The structure is collinear antiferromagnetic in the whole temperature range below T N , with the magnetic moments aligned along the tetragonal c-axis. The uncommon shape of the temperature dependence of the magnetization observed in our sample is attributed to small amounts of the ferromagnetic low-temperature modification of TbTiGe

  11. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  12. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  13. GE will finance 614-MW cogeneration plant

    International Nuclear Information System (INIS)

    Anon.

    1990-01-01

    The General Electric Power Funding Corporation, a unit of GE Capital, will provide up to $870 million in construction and permanent financing, and letters of credit to Cogen Technologies of Houston, Texas. The agreement will fund the construction of a 614-megawatt (MW), combined-cycle cogeneration plant to be built in Linden, New Jersey, and for the purchase of gas properties. The plant will be owned by Cogen Technologies. The financing is one of the largest packages ever for a cogeneration plant, GE said

  14. Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe4

    International Nuclear Information System (INIS)

    Prokofieva, Violetta K.; Pavlova, Lydia M.

    2014-01-01

    Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe 4 grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe 4 grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe 4 crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition

  15. Atomistic simulation of the thermal conductivity in amorphous SiO2 matrix/Ge nanocrystal composites

    Science.gov (United States)

    Kuryliuk, Vasyl V.; Korotchenkov, Oleg A.

    2017-04-01

    We use nonequilibrium molecular dynamics computer simulations with the Tersoff potential aiming to provide a comprehensive picture of the thermal conductivity of amorphous SiO2 (a-SiO2) matrix with embedded Ge nanocrystals (nc-Ge). The modelling predicts the a-SiO2 matrix thermal conductivity in a temperature range of 50 fair agreement with experiment at around room temperature. It is worth noticing that the predicted room-temperature thermal conductivity in a-SiO2 is in very good agreement with the experimental result, which is in marked contrast with the thermal conductivity calculated employing the widely used van Beest-Kramer-van Santen (BKS) potential. We show that the thermal conductivity of composite nc-Ge/a-SiO2 systems decreases steadily with increasing the volume fraction of Ge inclusions, indicative of enhanced interface scattering of phonons imposed by embedded Ge nanocrystals. We also observe that increasing the volume fractions above a certain threshold value results in a progressively increased thermal conductivity of the nanocomposite, which can be explained by increasing volume fraction of a better thermally conducting Ge. Finally, non-equilibrium molecular dynamics simulations with the Tersoff potential are promising for computing the thermal conductivity of nanocomposites based on amorphous SiO2 and can be readily scaled to more complex composite structures with embedded nanoparticles, which thus help design nanocomposites with desired thermal properties.

  16. Preparation of special purity Ge - S - I and Ge - Se - I glasses

    Science.gov (United States)

    Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Kotereva, T. V.; Snopatin, G. E.; Churbanov, M. F.

    2017-05-01

    The paper considers the new approaches for the production of special pure Ge - S - I and Ge - Se - I glasses via the germanium(IV) iodide, germanium(II) sulfide, as well as the Ge2S3, Ge2S3I2 and Ge2Se3I2 glassy alloys. The glass samples containing 0.03-0.17 ppm(wt) hydrogen impurity in the form of SH-group, 0.04-0.15 ppm(wt) hydrogen impurity in the form of SeH-group, and 0.5-7.8 ppm(wt) oxygen impurity in the form of Ge-O were produced. Using a crucible technique, the single-index [GeSe4]95I5 glass fibers of 300-400 μm diameter were drawn. The minimum optical losses in the best fiber were 1.7 dB/m at a wavelength of 5.5 μm; the background optical losses were within 2-3 dB/m in the spectral range of 2.5-8 μm.

  17. Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6).

    Science.gov (United States)

    Li, Qian-Shu; Lü, Rui-Hua; Xie, Yaoming; Schaefer, Henry F

    2002-12-01

    The GeH(n) (n = 0-4) and Ge(2)H(n) (n = 0-6) systems have been studied systematically by five different density functional methods. The basis sets employed are of double-zeta plus polarization quality with additional s- and p-type diffuse functions, labeled DZP++. For each compound plausible energetically low-lying structures were optimized. The methods used have been calibrated against a comprehensive tabulation of experimental electron affinities (Chemical Reviews 102, 231, 2002). The geometries predicted in this work include yet unknown anionic species, such as Ge(2)H(-), Ge(2)H(2)(-), Ge(2)H(3)(-), Ge(2)H(4)(-), and Ge(2)H(5)(-). In general, the BHLYP method predicts the geometries closest to the few available experimental structures. A number of structures rather different from the analogous well-characterized hydrocarbon radicals and anions are predicted. For example, a vinylidene-like GeGeH(2) (-) structure is the global minimum of Ge(2)H(2) (-). For neutral Ge(2)H(4), a methylcarbene-like HGë-GeH(3) is neally degenerate with the trans-bent H(2)Ge=GeH(2) structure. For the Ge(2)H(4) (-) anion, the methylcarbene-like system is the global minimum. The three different neutral-anion energy differences reported in this research are: the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). For this family of molecules the B3LYP method appears to predict the most reliable electron affinities. The adiabatic electron affinities after the ZPVE correction are predicted to be 2.02 (Ge(2)), 2.05 (Ge(2)H), 1.25 (Ge(2)H(2)), 2.09 (Ge(2)H(3)), 1.71 (Ge(2)H(4)), 2.17 (Ge(2)H(5)), and -0.02 (Ge(2)H(6)) eV. We also reported the dissociation energies for the GeH(n) (n = 1-4) and Ge(2)H(n) (n = 1-6) systems, as well as those for their anionic counterparts. Our theoretical predictions provide strong motivation for the further experimental study of these important germanium hydrides. Copyright 2002 Wiley

  18. Strain distribution of confined Ge/GeO2 core/shell nanoparticles engineered by growth environments

    Science.gov (United States)

    Wei, Wenyan; Yuan, Cailei; Luo, Xingfang; Yu, Ting; Wang, Gongping

    2016-02-01

    The strain distributions of Ge/GeO2 core/shell nanoparticles confined in different host matrix grown by surface oxidation are investigated. The simulated results by finite element method demonstrated that the strains of the Ge core and the GeO2 shell strongly depend on the growth environments of the nanoparticles. Moreover, it can be found that there is a transformation of the strain on Ge core from tensile to compressive strain during the growth of Ge/GeO2 core/shell nanoparticles. And, the transformation of the strain is closely related with the Young's modulus of surrounding materials of Ge/GeO2 core/shell nanoparticles.

  19. The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

    Science.gov (United States)

    Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

    2018-03-01

    The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

  20. Thermal transport property of Ge34 and d-Ge investigated by molecular dynamics and the Slack's equation

    International Nuclear Information System (INIS)

    Han-Fu, Wang; Wei-Guo, Chu; Yan-Jun, Guo; Hao, Jin

    2010-01-01

    In this study, we evaluate the values of lattice thermal conductivity κ L of type II Ge clathrate (Ge 34 ) and diamond phase Ge crystal (d-Ge) with the equilibrium molecular dynamics (EMD) method and the Slack's equation. The key parameters of the Slack's equation are derived from the thermodynamic properties obtained from the lattice dynamics (LD) calculations. The empirical Tersoff's potential is used in both EMD and LD simulations. The thermal conductivities of d-Ge calculated by both methods are in accordance with the experimental values. The predictions of the Slack's equation are consistent with the EMD results above 250 K for both Ge 34 and d-Ge. In a temperature range of 200–1000 K, the κ L value of d-Ge is about several times larger than that of Ge 34 . (condensed matter: structure, thermal and mechanical properties)

  1. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

  2. Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

    Science.gov (United States)

    Nahali, Masoud; Mehri, Ali

    2018-06-01

    The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

  3. Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

    Directory of Open Access Journals (Sweden)

    Nigel J. Cook

    2015-03-01

    Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on  zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent

  4. Shallow acceptors in strained Ge/Ge1-xSix heterostructures with quantum wells

    International Nuclear Information System (INIS)

    Aleshkin, V.Ya.; Andreev, B.A.; Gavrilenko, V.I.; Erofeeva, I.V.; Kozlov, D.V.; Kuznetsov, O.A.

    2000-01-01

    Dependence of acceptor localized state energies in quantum wells (strained layers of Ge in heterostructures Ge/Ge 1-x Si x ) on the width of quantum well and position in it was studied theoretically. Spectrum of impurity absorption in the far infrared range was calculated. Comparison of the results calculated and observed photoconductivity spectra permits estimating acceptor distribution over quantum well and suggesting conclusion that acceptors can be largely concentrated near heteroboundaries. Absorption spectrum was calculated bearing in mind resonance impurity states, which permits explaining the observed specific features in the photoconductivity spectrum short-wave range by transition to resonance energy levels, bound to upper subzones of dimensional quantization [ru

  5. Isobaric analogue states of 73Ge via 72Ge(3He,d)73As reaction

    International Nuclear Information System (INIS)

    Ramaswamy, C.R.; Puttaswamy, N.G.; Sarma, N.

    1974-01-01

    The 72 Ge( 3 He,d) 73 As reaction has been studied at 20 MeV incident 3 He energy using an MP tandem and a multigap spectrograph. The energy spectrum of deuterons in the region between 9 to 10.5 MeV excitation energy of 73 As shows analogue states corresponding to G.S., 570, 673, 805, 900, 1050, and 1350 KeV states of 73 Ge. Angular distributions for the analogue states and 1-values of the transferred protons are extracted. The results are compared with available data on the levels of 73 Ge. (author)

  6. Interfacial processes in the Pd/a-Ge:H system

    Science.gov (United States)

    Edelman, F.; Cytermann, C.; Brener, R.; Eizenberg, M.; Weil, R.; Beyer, W.

    1993-06-01

    The kinetics of phase transformation has been studied in a two-layer structure of Pd/a-Ge:H after vacuum annealing at temperatures from 180 to 500°C. The a-Ge:H was deposited at 250°C on both c-Si and cleaved NaCl substrates in an RF glow discharge from a GeH 4/H 2 mixture. It was found that, similarly to the Pd/c-Ge and the Pd/a-Ge (e-gun deposited) systems, in the case of 0.15-0.2 μm Pd/0.6-1.0 μm a-Ge:H interfacial germanides formed first through the production of Pd 2Ge (plus a small amount of PdGe), and then PdGe was produced. The growth of both compounds was found to be diffusion-controlled. The nonreacted a-Ge:H layer beneath the germanide overlayer crystallized at 400-500°C. A reverse sequence of germanides formation was revealed in the case of 50 nm Pd/30 nm a-Ge:H, studied by in situ heat treatment in the TEM utilizing non-supported samples. The first germanide detected was PdGe and then, as a result of PdGe and Ge reaction or the PdGe decomposition, Pd 2Ge formed. The temperature dependence of the incubation time before the first ˜ 10 nm PdGe grains formed, followed an Arrhenius curve with an activation energy of 1.45 eV.

  7. Calibration of Ge gamma-ray spectrometers for complex sample geometries and matrices

    Energy Technology Data Exchange (ETDEWEB)

    Semkow, T.M., E-mail: thomas.semkow@health.ny.gov [Wadsworth Center, New York State Department of Health, Empire State Plaza, Albany, NY 12201 (United States); Department of Environmental Health Sciences, School of Public Health, University at Albany, State University of New York, Rensselaer, NY 12144 (United States); Bradt, C.J.; Beach, S.E.; Haines, D.K.; Khan, A.J.; Bari, A.; Torres, M.A.; Marrantino, J.C.; Syed, U.-F. [Wadsworth Center, New York State Department of Health, Empire State Plaza, Albany, NY 12201 (United States); Kitto, M.E. [Wadsworth Center, New York State Department of Health, Empire State Plaza, Albany, NY 12201 (United States); Department of Environmental Health Sciences, School of Public Health, University at Albany, State University of New York, Rensselaer, NY 12144 (United States); Hoffman, T.J. [Wadsworth Center, New York State Department of Health, Empire State Plaza, Albany, NY 12201 (United States); Curtis, P. [Kiltel Systems, Inc., Clyde Hill, WA 98004 (United States)

    2015-11-01

    A comprehensive study of the efficiency calibration and calibration verification of Ge gamma-ray spectrometers was performed using semi-empirical, computational Monte-Carlo (MC), and transfer methods. The aim of this study was to evaluate the accuracy of the quantification of gamma-emitting radionuclides in complex matrices normally encountered in environmental and food samples. A wide range of gamma energies from 59.5 to 1836.0 keV and geometries from a 10-mL jar to 1.4-L Marinelli beaker were studied on four Ge spectrometers with the relative efficiencies between 102% and 140%. Density and coincidence summing corrections were applied. Innovative techniques were developed for the preparation of artificial complex matrices from materials such as acidified water, polystyrene, ethanol, sugar, and sand, resulting in the densities ranging from 0.3655 to 2.164 g cm{sup −3}. They were spiked with gamma activity traceable to international standards and used for calibration verifications. A quantitative method of tuning MC calculations to experiment was developed based on a multidimensional chi-square paraboloid. - Highlights: • Preparation and spiking of traceable complex matrices in extended geometries. • Calibration of Ge gamma spectrometers for complex matrices. • Verification of gamma calibrations. • Comparison of semi-empirical, computational Monte Carlo, and transfer methods of Ge calibration. • Tuning of Monte Carlo calculations using a multidimensional paraboloid.

  8. Calibration of Ge gamma-ray spectrometers for complex sample geometries and matrices

    International Nuclear Information System (INIS)

    Semkow, T.M.; Bradt, C.J.; Beach, S.E.; Haines, D.K.; Khan, A.J.; Bari, A.; Torres, M.A.; Marrantino, J.C.; Syed, U.-F.; Kitto, M.E.; Hoffman, T.J.; Curtis, P.

    2015-01-01

    A comprehensive study of the efficiency calibration and calibration verification of Ge gamma-ray spectrometers was performed using semi-empirical, computational Monte-Carlo (MC), and transfer methods. The aim of this study was to evaluate the accuracy of the quantification of gamma-emitting radionuclides in complex matrices normally encountered in environmental and food samples. A wide range of gamma energies from 59.5 to 1836.0 keV and geometries from a 10-mL jar to 1.4-L Marinelli beaker were studied on four Ge spectrometers with the relative efficiencies between 102% and 140%. Density and coincidence summing corrections were applied. Innovative techniques were developed for the preparation of artificial complex matrices from materials such as acidified water, polystyrene, ethanol, sugar, and sand, resulting in the densities ranging from 0.3655 to 2.164 g cm −3 . They were spiked with gamma activity traceable to international standards and used for calibration verifications. A quantitative method of tuning MC calculations to experiment was developed based on a multidimensional chi-square paraboloid. - Highlights: • Preparation and spiking of traceable complex matrices in extended geometries. • Calibration of Ge gamma spectrometers for complex matrices. • Verification of gamma calibrations. • Comparison of semi-empirical, computational Monte Carlo, and transfer methods of Ge calibration. • Tuning of Monte Carlo calculations using a multidimensional paraboloid

  9. Partial-wave analyses of hadron scattering below 2 GeV

    International Nuclear Information System (INIS)

    Arndt, R.A.; Roper, L.D.

    1991-01-01

    The Center for Analysis of Particle Scattering (CAPS) in the Department of Physics at Virginia Polytechnic Institute and State University has analyzed basic two-body hadron reactions below 2 GeV for the last two decades. Reactions studied were nucleon-nucleon, pion-nucleon, K + -nucleon and pion photoproduction systems. In addition to analyses of these systems, a computer graphics system (SAID) has been developed and disseminated to over 250 research institutions using VAX computers. The computer-interactive system for disseminating information on basic scattering reactions is also accessible to the physics community through TELNET on the VPI ampersand SU physics department VAX. 6 refs

  10. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    International Nuclear Information System (INIS)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

    2014-01-01

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  11. Shallow acceptors in Ge/GeSi heterostructures with quantum wells in magnetic field

    International Nuclear Information System (INIS)

    Aleshkin, V.Ya.; Antonov, A.V.; Veksler, D.B.; Gavrilenko, V.I.; Erofeeva, I.V.; Ikonnikov, A.V.; Kozlov, D.V.; Spirin, K.E.; Kuznetsov, O.A.

    2005-01-01

    One investigated both theoretically and experimentally into shallow acceptors in Ge/GeSi heterostructures with quantum wells (QW) in a magnetic field. It is shown that alongside with lines of cyclotron resonance in magnetoabsorption spectra one observes transitions from the ground state of acceptor to the excited ones associated with the Landau levels from the first and the second subbands of dimensional quantization, and resonance caused by ionization of A + -centres. To describe impurity transitions in Ge/GeSi heterostructures with QW in a magnetic field and to interpret the experiment results in detail one uses numerical method of calculation based on expansion of wave function of acceptor in terms of basis of wave functions of holes in QW in the absence of magnetic field [ru

  12. Operating experience with the Fermilab 500-GeV accelerator

    International Nuclear Information System (INIS)

    Urban, G.S.; Gannon, J.C.

    1977-01-01

    The Fermilab accelerator has been operating for more than four years. It has been improved so that it is now capable of operating at an energy of 500 GeV and an intensity in excess of 2.0 x 10 13 protons per pulse. The accelerator is manned on a 24 hour a day basis by an operating team of five persons. This is possible in part, because almost all of the hardware systems have status monitoring and control through an advanced computer control system. A discussion is given of the operation of the accelerator with emphasis on person to machine interface, operator training techniques used at Fermilab, and the keeping of records and reliability information

  13. Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

    International Nuclear Information System (INIS)

    Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

    2006-01-01

    Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

  14. Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

    Energy Technology Data Exchange (ETDEWEB)

    Paul, N.

    2007-10-26

    In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

  15. Tailoring the spin polarization in Ge/SiGe multiple quantum wells

    International Nuclear Information System (INIS)

    Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario; Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni; Trivedi, Dhara; Song, Yang; Li, Pengki; Dery, Hanan

    2013-01-01

    We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization

  16. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    International Nuclear Information System (INIS)

    Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

    2014-01-01

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

  17. Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

    Science.gov (United States)

    Fernando, Nalin S.; Nunley, T. Nathan; Ghosh, Ayana; Nelson, Cayla M.; Cooke, Jacqueline A.; Medina, Amber A.; Zollner, Stefan; Xu, Chi; Menendez, Jose; Kouvetakis, John

    2017-11-01

    Epitaxial Ge layers on a Si substrate experience a tensile biaxial stress due to the difference between the thermal expansion coefficients of the Ge epilayer and the Si substrate, which can be measured using asymmetric X-ray diffraction reciprocal space maps. This stress depends on temperature and affects the band structure, interband critical points, and optical spectra. This manuscripts reports careful measurements of the temperature dependence of the dielectric function and the interband critical point parameters of bulk Ge and Ge epilayers on Si using spectroscopic ellipsometry from 80 to 780 K and from 0.8 to 6.5 eV. The authors find a temperature-dependent redshift of the E1 and E1 + Δ1 critical points in Ge on Si (relative to bulk Ge). This redshift can be described well with a model based on thermal expansion coefficients, continuum elasticity theory, and the deformation potential theory for interband transitions. The interband transitions leading to E0‧ and E2 critical points have lower symmetry and therefore are not affected by the stress.

  18. Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

    International Nuclear Information System (INIS)

    Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

    2013-01-01

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

  19. High-pressure structural behavior of nanocrystalline Ge

    DEFF Research Database (Denmark)

    Wang, H.; Liu, J. F.; Yan, H.

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi...

  20. Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

    KAUST Repository

    Liu, E. K.; Zhang, H. G.; Xu, G. Z.; Zhang, X. M.; Ma, R. S.; Wang, W. H.; Chen, J. L.; Zhang, H. W.; Wu, G. H.; Feng, L.; Zhang, Xixiang

    2013-01-01

    An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting

  1. Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

    Science.gov (United States)

    Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

    2018-01-01

    Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

  2. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  3. Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

    International Nuclear Information System (INIS)

    Han Le; Zhang Xiong; Wang Sheng-Kai; Xue Bai-Qing; Liu Hong-Gang; Wu Wang-Ran; Zhao Yi

    2014-01-01

    We propose a modified thermal oxidation method in which an Al 2 O 3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO x interfacial layer, and obtain a superior Al 2 O 3 /GeO x /Ge gate stack. The GeO x interfacial layer is formed in oxidation reaction by oxygen passing through the Al 2 O 3 OBL, in which the Al 2 O 3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO x interfacial layer would dramatically decrease as the thickness of Al 2 O 3 OBL increases, which is beneficial to achieving an ultrathin GeO x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO x interfacial layer has little influence on the passivation effect of the Al 2 O 3 /Ge interface. Ge (100) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) using the Al 2 O 3 /GeO x /Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I on /I off ) ratio of above 1×10 4 , a subthreshold slope of ∼ 120 mV/dec, and a peak hole mobility of 265 cm 2 /V·s are achieved. (condensed matter: structural, mechanical, and thermal properties)

  4. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Hung-Pin Hsu

    2013-01-01

    Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

  5. Electronic structure of Ge-2 and Ge-2 and thermodynamic properties of Ge-2 from all electron ab initio investigations and Knudsen effusion mass spectroscopic measurements

    DEFF Research Database (Denmark)

    Shim, Irene; Baba, M. Sai; Gingerich, K.A.

    2002-01-01

    The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term and for t......The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term...... excited states are presented. Thermal functions based on the theoretically determined molecular parameters were used to derive the thermodynamic properties of the Ge-2 molecule from new mass spectrometric equilibrium data. The literature value for the dissociation energy of Ge-2 has been re...

  6. Control circuits for the 1.3 GeV electron synchrotron

    International Nuclear Information System (INIS)

    Asaoka, S.; Shiino, K.; Yoshioka, M.; Norimura, K.

    1980-01-01

    Following control circuits for the 1.3 GeV electron synchrotron, Institute for Nuclear Study, University of Tokyo, have been designed and constructed. 1. Variable delay circuits for the timing pulse of the synchrotron. 2. An alarm circuit for sputter ion pumps. 3. A sample and hold circuit for digital display and computer control of the beam intensity. This report describes detailes of the circuits and their specificatons. (author)

  7. Space-charge effects in the Fermilab Main Ring at 8 GeV

    International Nuclear Information System (INIS)

    Mane, S.R.

    1989-03-01

    I use computer tracking to investigate the effects of space-charge on particle motion in the Fermilab Main Ring at p = 8 GeV/c. The results are found to agree with the Laslett tuneshift formula. Simple model cases are also studied to speed up the tracking. The effects of synchrotron oscillations, via tune modulation and dispersion, are included. 2 refs., 5 figs

  8. Some issues on the RF system in the 3 GeV Fermilab pre-booster

    International Nuclear Information System (INIS)

    Ng, K. Y.

    1998-01-01

    Some issues are presented on the rf system in the future Fermilab prebooster, which accelerates 4 bunches each containing 0.25 x 10 14 protons from 1 to 3 GeV kinetic energy. The problem of beam loading is discussed. The proposal of having a non-tunable fixed-frequency rf system is investigated. Robinson's criteria for phase stability are checked and possible Robinson instability growth is computed

  9. Accelerator study note: An attempt of 1 GeV linac

    International Nuclear Information System (INIS)

    Kato, Takao.

    1987-01-01

    A hypothetical 1 GeV linac is described, including its structure (which includes an ion source, radio frequency quadrupole linac, drift type linac, and coupled cavity linac), criteria for optimized design, cost optimization, frequency dependability of high frequency electric power loss, tuning during operation, the general rf system, computer codes and example calculations, beam dynamics simulation, and reduction of energy spread through the use of a debuncher

  10. Solute trapping of Ge in Al

    International Nuclear Information System (INIS)

    Smith, P.M.; West, J.A.; Aziz, M.J.

    1992-01-01

    This paper reports on partitioning during rapid solidification of dilute Al-Ge alloys. Implanted thin films of Al have been pulsed-laser melted to obtain solidification at velocities in the range of 0.01 ms to 3.3 m/s, as measured by the transient conductance technique. Previous and subsequent Rutherford Backscattering depth profiling of the Ge solute in the Al alloys has been used to determine the nonequilibrium partition coefficient k. A significant degree of lateral film growth during solidification confines determination of k to the placing of an upper bound of 0.22 on k for solidification velocities in this range. The authors place a lower limit of 10 m/s on the diffusive velocity, which locates the transition from solute partitioning to solute trapping in the Continuous Growth Model

  11. The 400 GeV proton synchrotron

    International Nuclear Information System (INIS)

    1976-05-01

    A general account is given of the 400-GeV proton synchrotron, known as Super Proton Synchrotron (SPS), of the European Organization for Nuclear Research (CERN) at Geneva. A brief chapter on the history of the project covers the steps leading to the earlier plan for a 300-GeV accelerator at a new CERN laboratory elsewhere in Europe, abandoned in 1971 in favour of the present machine, and the progress of construction of the latter. The general features of the SPS design are outlined, illustrated by an aerial view of the CERN site, a plan of the SPS, and interior views of the SPS ring tunnel and main control room. (WSN)

  12. Europe at 400 GeV

    International Nuclear Information System (INIS)

    Walgate, R.

    1977-01-01

    The inaugural opening of the 400 GeV proton accelerator at CERN took place on 7 May 1977. A review of difficulties encountered during the 14 years since the SPS was first proposed is given and experiments already underway are outlined. The advantages of this facility over Fermilab and the type of experiment which can now be undertaken to answer some of the questions left open by Fermilab are discussed. (U.K.)

  13. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    OpenAIRE

    Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau

    2013-01-01

    We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spec...

  14. Strain relaxation of germanium-tin (GeSn) fins

    Science.gov (United States)

    Kang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia

    2018-02-01

    Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patterning and dry etching. The strain in the Ge1-xSnx fins having fin widths (WFin) ranging from 1 μm down to 80 nm was characterized using micro-Raman spectroscopy. Raman measurements show that the strain relaxation increases with decreasing WFin. Finite element (FE) simulation shows that the strain component in the transverse direction relaxes with decreasing WFin, while the strain component along the fin direction remains unchanged. For various Ge1-xSnx fin widths, transverse strain relaxation was further extracted using micro-Raman spectroscopy, which is consistent with the simulation results.

  15. High spin states in 66,68Ge

    International Nuclear Information System (INIS)

    Hermkens, U.; Becker, F.; Eberth, J.; Freund, S.; Mylaeus, T.; Skoda, S.; Teichert, W.; Werth, A. v.d.

    1992-01-01

    High spin states of 66,68 Ge have been investigated at the FN Tandem accelerator of the University of Koeln via the reactions 40 Ca( 32 S,α2p,4p) 66,68 Ge at a beam energy of 100 MeV and 58 Ni( 16 O,α2p) 68 Ge at 65 MeV. The OSIRIS spectrometer with 12 escape suppressed Ge detectors was used to measure γγ coincidences and γ-ray angular distributions. In 66 Ge ( 68 Ge) 33 (22) new levels were found and 63 (62) new γ-transitions were placed in the level scheme. Both nuclei show a rather complicated but similar excitation pattern, ruled by the interplay of quasiparticle and collective degrees of freedom. The results are compared to the recently published EXVAM calculations for 68 Ge. (orig.)

  16. Study of the interactionπ+p at 1.2 GeV/c π+ laboratory momentum

    International Nuclear Information System (INIS)

    Ladron de Guevara, P.

    1973-01-01

    We present the main results of a 0.33 events/urban experiment of π + interactions in hydrogen at 1.2 GeV/c, using the 80 cm Saclay bubble chamber. the partial cross sections of the different reactions and the elastic differential cross section are computed by normalizing to the total cross section obtained by other groups. (Author) 34 refs

  17. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

    2016-04-07

    We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

  18. The coarsening process of Ge precipitates in an Al-4 wt.% Ge alloy

    Energy Technology Data Exchange (ETDEWEB)

    Deaf, G.H

    2004-05-01

    In this paper the results of a quantitative transmission electron microscopy (TEM) investigation of the precipitation process of Ge in an Al-4 wt.% Ge alloy are described. Two crystallographic orientation relationships between the irregular germanium precipitate and aluminum matrix were found to be [1 0 0]{sub Ge} || [1 1 0]{sub Al} and [1 1 4]{sub Ge} || [1 0 0]{sub Al}. The irregular germanium precipitates formed on [0 0 1]{sub Al} habit planes. The origin of the irregular shape is due to the existence of a highly anisotropic interfacial energy as well as in an isotropic growth rate along <1 1 0>{sub A1} directions. Particles sizes were determined for variety of isothermal ageing times at 348, 423 and 523 K. The coarsening of the different morphologies of Ge precipitates was found to obey Ostwald ripening kinetics. The TEM results showed that the coarsening of irregular particles was due to the interfacial coalescence between these particles. Nine different morphologies have been distinguished in the form of (i) irregular particles, (ii) spheres, (iii) hexagonal plates, (iv) rods, (v) triangular plates, (vi) laths, (vii) small tetrahedra, (viii) rectangular plates, and (ix) Lamellae shape.

  19. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

    2015-09-01

    In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

  20. Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments

    International Nuclear Information System (INIS)

    Montalenti, F; Marzegalli, A; Capellini, G; Seta, M De; Miglio, Leo

    2007-01-01

    A set of recent results concerning lateral and vertical ordering of Ge islands grown on Si(001) is reviewed. Experimental data generated by chemical vapour deposition and analysed by atomic force microscopy and photoelectron spectroscopy are compared with computer simulations and modelling based on atomistic approaches and continuum theory. In particular, we show that it is possible to probe experimentally the detailed strain field generated by buried Ge islands at the surface of the Si capping layer. The observed arrangement of small Ge islands grown over the capping layer is demonstrated to be very close to the one predicted by a simple model where the local chemical potential is inferred from the strain field at the atomic scale, as given by Tersoff-potential molecular dynamics simulations. Moreover, we review recent experimental evidence for lateral ordering, triggered by partial Si capping, in the first layer of Ge islands on Si(001). Theoretical support is given by showing that when two islands lie in close proximity the elastic field is likely to generate a flow of atoms leading to an effective gliding motion along opposite directions of both islands, eventually stopped by the presence of further neighbouring islands

  1. New approach to calculate the true-coincidence effect of HpGe detector

    Energy Technology Data Exchange (ETDEWEB)

    Alnour, I. A., E-mail: aaibrahim3@live.utm.my, E-mail: ibrahim.elnour@yahoo.com [Department of Physics, Faculty of Pure and Applied Science, International University of Africa, 12223 Khartoum (Sudan); Wagiran, H. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai,Johor (Malaysia); Ibrahim, N. [Faculty of Defence Science and Technology, National Defence University of Malaysia, Kem Sungai Besi, 57000 Kuala Lumpur (Malaysia); Hamzah, S.; Elias, M. S. [Malaysia Nuclear Agency (MNA), Bangi, 43000 Kajang, Selangor D.E. (Malaysia); Siong, W. B. [Chemistry Department, Faculty of Resource Science & Technology, Universiti Malaysia Sarawak, 94300 Kota Samarahan, Sarawak (Malaysia)

    2016-01-22

    The corrections for true-coincidence effects in HpGe detector are important, especially at low source-to-detector distances. This work established an approach to calculate the true-coincidence effects experimentally for HpGe detectors of type Canberra GC3018 and Ortec GEM25-76-XLB-C, which are in operation at neutron activation analysis lab in Malaysian Nuclear Agency (NM). The correction for true-coincidence effects was performed close to detector at distances 2 and 5 cm using {sup 57}Co, {sup 60}Co, {sup 133}Ba and {sup 137}Cs as standard point sources. The correction factors were ranged between 0.93-1.10 at 2 cm and 0.97-1.00 at 5 cm for Canberra HpGe detector; whereas for Ortec HpGe detector ranged between 0.92-1.13 and 0.95-100 at 2 and 5 cm respectively. The change in efficiency calibration curve of the detector at 2 and 5 cm after correction was found to be less than 1%. Moreover, the polynomial parameters functions were simulated through a computer program, MATLAB in order to find an accurate fit to the experimental data points.

  2. Theoretical scenarios for 103 GeV to 1019 GeV

    International Nuclear Information System (INIS)

    Kaul, R.K.

    1996-01-01

    Basic dogmas of particle physics are reviewed. Some of their implications beyond the standard model are explored. Higgs sector of the standard model of electroweak interactions is the weakest link in the model. Elementary Higgs field makes the model unnatural beyond about 10 3 GeV. Supersymmetry provides the most attractive framework where in this problem can be addressed. This new symmetry, relating fermions and bosons, is expected to be operative at about 10 3 GeV. In addition, grand unification of the fundamental interactions can be studied consistently only within a supersymmetric formulation. Inclusion of gravity with other interactions leads to supergravity theories, which should emerge as a low energy description of a more fundamental theory, the string-theory. Supersymmetry again is an essential feature of such a theory. Quantum gravity, with its characteristic scale of 10 19 GeV, may well be described by a superstring theory. (author). 28 refs., 1 fig

  3. Electron-electron interaction in p-SiGe/Ge quantum wells

    International Nuclear Information System (INIS)

    Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

    2005-01-01

    The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

  4. Background components of Ge(Li) and GeHP-detectors in the passive shield

    International Nuclear Information System (INIS)

    Buraeva, E.A.; Davydov, M.G.; Zorina, L.V.; Stasov, V.V.

    2007-01-01

    The gamma-spectrometer Ge(Li)- and the extra pure Ge-detector background components in a specially designed passive shield were subjected to investigation in the land-based laboratory in 1996-2006. The measurement time period varied from 45 up to 240 hours. The detector background is caused by the radionuclides in the shield material, in the shield cells and in the detector materials. The prominence was given to the study of the revealed time dependence of 222 Rn daughter product background including '2 10 Pb 46.5 keV peak [ru

  5. Effect of Ge surface termination on oxidation behavior

    Science.gov (United States)

    Lee, Younghwan; Park, Kibyung; Cho, Yong Soo; Lim, Sangwoo

    2008-09-01

    Sulfur-termination was formed on the Ge(1 0 0) surface using (NH 4) 2S solution. Formation of Ge-S and the oxidation of the S-terminated Ge surface were monitored with multiple internal reflection Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. In the 0.5, 5, or 20% (NH 4) 2S solution, H-termination on the Ge(1 0 0) surface was substituted with S-termination in 1 min. When the S-terminated Ge(1 0 0) surface was exposed in air ambient, the oxidation was retarded for about 3600 min. The preservation time of the oxide layer up to one monolayer of S-terminated Ge(1 0 0) surface was about 120 times longer than for the H-terminated Ge(1 0 0) surface. However, the oxidation of S-terminated Ge(1 0 0) surface drastically increased after the threshold time. There was no significant difference in threshold time between S-terminations formed in 0.5, 5, and 20% (NH 4) 2S solutions. With the surface oxidation, desorption of S on the Ge surface was observed. The desorption behavior of sulfur on the S-terminated Ge(1 0 0) surface was independent of the concentration of the (NH 4) 2S solution that forms S-termination. Non-ideal S-termination on Ge surfaces may be related to drastic oxidation of the Ge surface. Finally, with the desulfurization on the S-terminated Ge(1 0 0) surface, oxide growth is accelerated.

  6. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    International Nuclear Information System (INIS)

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  7. Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

    Science.gov (United States)

    Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

    2017-06-01

    We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

  8. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  9. Search for associated production of charmed particles in π-p collisions at 40 GeV/c

    International Nuclear Information System (INIS)

    Apel', V.D.; Bertoluchchi, E.; Viktorov, V.A.

    1976-01-01

    At the 70 GeV IHEP accelerator a search for the associated production of charmed D mesons produced in the reaction π - p→D 0 anti D 0 n at 40 GeV/c incident pion momentum was performed. For D 0 →K 0 π 0 decay identification a system of multiwire spark and proportional chambers and hodoscopes were used, detecting Ksub(s)sup(0)→πsup(+)πsup(-) decay, and 648-channel hodoscope spectrometer with the on-line computer was used to detect γ's from π 0 decay

  10. Structure of Ag, Fe and Ge microclusters

    International Nuclear Information System (INIS)

    Montano, P.A.; Shenoy, G.K.; Schulze, W.

    1989-01-01

    The structures of Ag, Fe and Ge microclusters were determined using EXAFS. The measurements were performed over a wide range of clusters sizes. The clusters were prepared using the gas aggregation technique and isolated in solid argon at 4.2 K. The measurements were performed at the National Synchrotron Light Source (NSLS) at beam line X-18B. A strong contraction of the interatomic distances was observed for Ag dimers and multimers. Silver clusters larger than 12 A mean diameter show a small contraction of the nn distance and a structure consistent with an fcc lattice. By contrast clusters smaller than 12 A show the presence of a small expansion and a strong reduction or absence of nnn in the EXAFS signal. This points towards a different crystallographic structure for Ag microclusters with diameter less than 12 A. In iron clusters we observe a gradual reduction of the nn distance as the cluster size decreases. The interatomic distance for iron dimers was determined to be 1.94 A, in good agreement with earlier measurements. The iron microclusters show a bcc structure down to a mean diameter of 9 A. Iron clusters with 9 A mean diameter show a structure inconsistent with a bcc lattice. The new structure is consistent with an fcc or hcp lattice. The measurements on Ge clusters show the presence of only nearest neighbors. There was clear evidence of temporal annealing as determined by variations in the near edge structure of the K-absorption edge. Absorption edge measurements were also performed for free Ge clusters travelling perpendicular to the direction of the synchrotron radiation beam. The measurements performed on the free clusters were consistent with those obtained for matrix isolated clusters. (orig.)

  11. Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

    International Nuclear Information System (INIS)

    Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

    2008-01-01

    Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

  12. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  13. Wozu Open-Access-Transformationsverträge?

    Directory of Open Access Journals (Sweden)

    Angela Holzer

    2017-07-01

    Full Text Available Die Deutsche Forschungsgemeinschaft (DFG hat im Frühjahr 2017 eine Ausschreibung veröffentlicht, um „Open-Access-Transformationsverträge“ zu unterstützen. Anträge können bis Ende 2018 gestellt werden. Dieser Artikel erläutert den Inhalt der Ausschreibung, erklärt die Beweggründe für die Ausschreibung, diskutiert die Vor- und Nachteile dieses Instruments der Open-Access-Transformation und legt dar, inwiefern einzelne Bibliotheken in Deutschland die Transformation befördern können.

  14. High spin spectroscopy of 70Ge

    International Nuclear Information System (INIS)

    Kumar Raju, M.; Sugathan, P.; Seshi Reddy, T.; Thirumala Rao, B.V.; Madhusudhana Rao, P.V.; Muralithar, S.; Singh, R.P.; Bhowmik, R.K.

    2011-01-01

    Structure of nuclei in mass 70 region is of interest due to presence of a variety of complex phenomenon. In these nuclei rapid change of nuclear shape with proton and neutron numbers, spin and excitation energy. Valance nucleons in f-p-g shell configuration will drive the nuclei towards high deformations. Relatively large values of quadrupole deformation are evident in the even-even nuclei in this region. Present study is aimed to explore the high spin structure of the 70 Ge nucleus. A negative parity structure was reported in an earlier study

  15. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  16. A Waveform Archiving System for the GE Solar 8000i Bedside Monitor.

    Science.gov (United States)

    Fanelli, Andrea; Jaishankar, Rohan; Filippidis, Aristotelis; Holsapple, James; Heldt, Thomas

    2018-01-01

    Our objective was to develop, deploy, and test a data-acquisition system for the reliable and robust archiving of high-resolution physiological waveform data from a variety of bedside monitoring devices, including the GE Solar 8000i patient monitor, and for the logging of ancillary clinical and demographic information. The data-acquisition system consists of a computer-based archiving unit and a GE Tram Rac 4A that connects to the GE Solar 8000i monitor. Standard physiological front-end sensors connect directly to the Tram Rac, which serves as a port replicator for the GE monitor and provides access to these waveform signals through an analog data interface. Together with the GE monitoring data streams, we simultaneously collect the cerebral blood flow velocity envelope from a transcranial Doppler ultrasound system and a non-invasive arterial blood pressure waveform along a common time axis. All waveform signals are digitized and archived through a LabView-controlled interface that also allows for the logging of relevant meta-data such as clinical and patient demographic information. The acquisition system was certified for hospital use by the clinical engineering team at Boston Medical Center, Boston, MA, USA. Over a 12-month period, we collected 57 datasets from 11 neuro-ICU patients. The system provided reliable and failure-free waveform archiving. We measured an average temporal drift between waveforms from different monitoring devices of 1 ms every 66 min of recorded data. The waveform acquisition system allows for robust real-time data acquisition, processing, and archiving of waveforms. The temporal drift between waveforms archived from different devices is entirely negligible, even for long-term recording.

  17. GeNN: a code generation framework for accelerated brain simulations

    Science.gov (United States)

    Yavuz, Esin; Turner, James; Nowotny, Thomas

    2016-01-01

    Large-scale numerical simulations of detailed brain circuit models are important for identifying hypotheses on brain functions and testing their consistency and plausibility. An ongoing challenge for simulating realistic models is, however, computational speed. In this paper, we present the GeNN (GPU-enhanced Neuronal Networks) framework, which aims to facilitate the use of graphics accelerators for computational models of large-scale neuronal networks to address this challenge. GeNN is an open source library that generates code to accelerate the execution of network simulations on NVIDIA GPUs, through a flexible and extensible interface, which does not require in-depth technical knowledge from the users. We present performance benchmarks showing that 200-fold speedup compared to a single core of a CPU can be achieved for a network of one million conductance based Hodgkin-Huxley neurons but that for other models the speedup can differ. GeNN is available for Linux, Mac OS X and Windows platforms. The source code, user manual, tutorials, Wiki, in-depth example projects and all other related information can be found on the project website http://genn-team.github.io/genn/.

  18. Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

    Science.gov (United States)

    Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

    2018-06-01

    The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

  19. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    Science.gov (United States)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

    2015-05-01

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

  20. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    International Nuclear Information System (INIS)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

    2015-01-01

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement

  1. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    Energy Technology Data Exchange (ETDEWEB)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Strachan, Alejandro, E-mail: strachan@purdue.edu [School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

    2015-05-07

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

  2. On the Potential Application of the Wrinkled SiGe/SiGe Nanofilms

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Wang, W.; Ch.

    2016-01-01

    Roč. 6, č. 2 (2016), s. 19-23 ISSN 2160-049X Institutional support: RVO:61388998 Keywords : wrinkled SiGe nanofilms * terahertz radiation * terahertz gap Subject RIV: BE - Theoretical Physics http://www.scirp.org/journal/wjm,http://dx.doi.org/10.4236/wjm.2016.62003

  3. Sample Scripts for Generating PaGE-OM XML [

    Lifescience Database Archive (English)

    Full Text Available Sample Scripts for Generating PaGE-OM XML This page is offering some sample scripts...on MySQL. Outline chart of procedure 6. Creating RDB tables for Generating PaGE-OM XML These scripts help yo...wnload: create_tables_sql2.zip 7. Generating PaGE-OM XML from phenotype data This sample Perl script helps y

  4. Innovative Ge Quantum Dot Functional Sensing and Metrology Devices

    Science.gov (United States)

    2017-08-21

    Sensing/Metrology Devices Period: May 26th 2015May 25th 2017 Investigators: Pei-Wen Li Affiliation: Department of Electrical Engineering , National...light sources as well as low-power, high-speed Ge photodetectors indeed requires the growth of direct-gap Ge, heterostructure engineering for...All these tasks cannot be simply conducted in terms of bulk Ge technology, and it is no doubt that nanoscience and nanotechnology would offer

  5. Electrical and magnetic transport properties of DyTiGe

    International Nuclear Information System (INIS)

    Dagula, W.; Tegus, O.; Li, X.W.; Zhang, L.; Brueck, E.; Boer, F.R. de; Buschow, K.H.J.

    2004-01-01

    Electrical resistivity and magnetoresistance of DyTiGe were investigated as a function of temperature and magnetic field. DyTiGe is an antiferromagnet with Neel temperature, T N , of 180 K. The electrical resistivity has an anomaly around T N . Below T N , the magnetoresistance of DyTiGe abruptly changes at a critical field. At 5 K, we observe a magnetoresistance reduction of about 20%

  6. New data on excited level scheme of 73Ge nucleus

    International Nuclear Information System (INIS)

    Kosyak, Yu.G.; Kaipov, D.K.; Chekushina, L.V.

    1990-01-01

    New data on the scheme of 73 Ge decay obtained by the method of reactor fast neutron inelastic scattering are presented. γ-Spectra from reaction 73 Ge(n, n'γ) 73 Ge at the angles of 90 and 124 deg of relatively incident neutron beam have been measured. Experimental populations of the levels are studied. 29 new γ-transitions have been identified, two new levels have been introduced

  7. Electrical circuit model of ITO/AZO/Ge photodetector.

    Science.gov (United States)

    Patel, Malkeshkumar; Kim, Joondong

    2017-10-01

    In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.

  8. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  9. The first acceleration to 300 GeV

    CERN Multimedia

    CERN PhotoLab

    1976-01-01

    After the acceleration to 80 GeV in May the 200 GeV energy was attained on June 4, followed by a successful attempt to reach 300 GeV and then 400 GeV by the Council session on June 17. Here at the desk (centre) Boris Milman and Bas de Raad, (right) Pat Mills and a machine operator. Then standing on the back Jacques Althaber, Simon Van der Meer, Hans-Peter Kindermann, Raymond Rausch, John Adams, Klaus Batzner, and still back Antonio Millich, Jim Allaby, Wim Middelkoop, Bo Angerth, Hans Horisberger.

  10. Growth and evolution of nickel germanide nanostructures on Ge(001)

    International Nuclear Information System (INIS)

    Grzela, T; Capellini, G; Schubert, M A; Schroeder, T; Koczorowski, W; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J

    2015-01-01

    Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer–Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous Ni_xGe_y wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the Ni_xGe_y terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular Ni_xGe_y 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110). (paper)

  11. Vertical Ge photodetector base on InP taper waveguide

    Science.gov (United States)

    Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.

    2018-06-01

    In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

  12. The Au modified Ge(1 1 0) surface

    Science.gov (United States)

    Zhang, L.; Kabanov, N. S.; Bampoulis, P.; Saletsky, A. M.; Zandvliet, H. J. W.; Klavsyuk, A. L.

    2018-05-01

    The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (16 × 2) and c(8 × 10) unit cells. The deposition of sub-monolayer amounts of Au and mild annealing results into de-reconstructed Ge(1 1 0) regions completely free of Ge pentagons and regions composed of nanowires that are aligned along the high symmetry [ 1 1 bar 0 ] direction of the Ge(1 1 0) surface. The de-reconstructed Ge(1 1 0) regions consist of atomic rows that are aligned along the [ 1 1 bar 0 ] direction. A substantial fraction of these substrate rows are straight and resemble the atom rows of the unreconstructed, i.e. bulk terminated, Ge(1 1 0) surface, whereas the other substrate rows have a meandering appearance. These meandering atom rows are comprised of two types of atoms, one type that appears dim, whereas the other type appears bright in filled-state scanning tunneling microscopy images. Using density functional theory calculations, we have tested more than 20 different atomic models for the meandering atom rows. The density functional theory calculations reveal that it is energetically favorable for the deposited Au atoms to exchange position with Ge atoms in the first layer. Based on these findings we conclude that the bright atoms are Ge atoms, whereas the dim atoms are Au atoms.

  13. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Martin Steglich

    2013-07-01

    Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  14. Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

    2017-11-29

    The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

  15. A 100 GeV SLAC Linac

    International Nuclear Information System (INIS)

    Farkas, Zoltan D

    2002-01-01

    The SLAC beam energy can be increased from the current 50 GeV to 100 GeV, if we change the operating frequency from the present 2856 MHz to 11424 MHz, using technology developed for the NLC. We replace the power distribution system with a proposed NLC distribution system as shown in Fig. 1. The four 3 meter s-band 820 nS fill time accelerator sections are replaced by six 2 meter x-band 120 nS fill time sections. Thus the accelerator length per klystron retains the same length, 12 meters. The 4050 65MW-3.5(micro)S klystrons are replaced by 75MW-1.5(micro)S permanent magnet klystrons developed here and in Japan. The present input to the klystrons would be multiplied by a factor of 4 and possibly amplified. The SLED [1] cavities have to be replaced. The increase in beam voltage is due to the higher elastance to group velocity ratio, higher compression ratio and higher unloaded to external Q ratio of the new SLED cavities. The average power input is reduced because of the narrower klystron pulse width and because the klystron electro-magnets are replaced by permanent magnets

  16. Magnetic phase diagrams of UNiGe

    International Nuclear Information System (INIS)

    Nakotte, H.; Hagmusa, I.H.; Klaasse, J.C.P.; Hagmusa, I.H.; Klaasse, J.C.P.

    1997-01-01

    UNiGe undergoes two magnetic transitions in zero field. Here, the magnetic diagrams of UNiGe for B parallel b and B parallel c are reported. We performed temperatures scans of the magnetization in static magnetic fields up to 19.5T applied along the b and c axes. For both orientations 3 magnetic phases have been identified in the B-T diagrams. We confirmed the previously reported phase boundaries for B parallel c, and in addition we determined the location of the phase boundaries for B parallel b. We discuss a possible relationship of the two zero-field antiferromagnetic phases (commensurate: T<42K; incommensurate: 42K< T<50K) and the field-induced phase, which, at low temperatures, occurs between 18 and 25T or 4 and 10T for B parallel b or B parallel c, respectively. Finally, we discuss the field dependence of the electronic contribution γ to the specific heat for B parallel c up to 17.5T, and we find that its field dependence is similar to the one found in more itinerant uranium compounds

  17. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    International Nuclear Information System (INIS)

    Knowlton, W.B.; Lawrence Berkeley Lab., CA

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 angstrom Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 angstrom, 500 angstrom, and 300 angstrom per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 angstrom/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 angstrom/side appear to correspond with the phonon transmission study

  18. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  19. Observation of a spin 4 neutral meson with 2 GeV mass decaying in π0π0

    International Nuclear Information System (INIS)

    Apel, W.D.; Augenstein, K.; Bertolucci, E.; Donskov, S.V.; Inyakin, A.V.; Kachanov, V. A.; Kittenberger, W.; Krasnokutsky, R.N.; Kruger, M.; Leder, G.

    1975-01-01

    The invariant mass spectrum of neutral meson states from π - p interactions at 40 GeV/c incident momentum has been investigated in a high statistics experiment performed at the 70 GeV IHEP accelerator. To detect the high energy photons coming from the produced neutral states, a hodoscope spectrometer with a computer on-line was used. A clear structure on the mass spectrum of dipions produced in the reaction π - p → π 0 π 0 n is observed at 2 GeV. The decay angular distributions show in this mass region the variation with mass typical of a state with a spin J = 4. The mass of the observed meson is found to be M (2020 +- 25) MeV and the estimate of the full width is (180 +- 50) MeV

  20. Observation of a spin 4 neutral meson with 2 GeV mass decaying in $\\pi^{0} \\pi^{0}$

    CERN Document Server

    Apel, W D; Bertolucci, E.; Donskov, S.V.; Inyakin, A.V.; Kachanov, V.A.; Kittenberger, W.; Krasnokutsky, R.N.; Kruger, M.; Leder, G.; Lednev, A.A.; Mannelli, I.; Mikhailov, Yu.V.; Müller, H.; Pierazzini, G.M.; Prokoshkin, Yu.D.; Quaglia, M.; Schneider, H.; Scribano, A.; Sergiampietri, F.; Shuvalov, R.S.; Sigurdsson, G.; Steuer, M.; Vincelli, M.L.

    1975-01-01

    The invariant mass spectrum of neutral meson states from π−p interactions at 40 GeV/c incident momentum has been investigated in a high statistics experiment performed at the 70 GeV IHEP accelerator. To detect the high energy photons coming from the produced neutral states, a hodoscope spectrometer with a computer on-line was used. A clear structure on the mass spectrum of dipions produced in the reaction π−p→π°π°n is observed at 2 GeV. The decay angular distributions show in this mass region the variation with mass typical of a state with a spin J = 4. The mass of the observed meson is found to be M = (2020±30)MeV and the estimate of the full width is (180±60) MeV.

  1. The oscillation probability of GeV solar neutrinos of all active species

    International Nuclear Information System (INIS)

    Gouvea, Andre de

    2001-01-01

    I discuss the oscillation probability of O(GeV) neutrinos of all active flavours produced inside the Sun and detected at the Earth. In the GeV energy regime, matter effects are potentially important both for the ''1-3'' system and the ''1-2'' system. A numerical scan of the multidimensional three-flavour parameter space is presented. One curiosity is that in the three-flavour oscillation case P αβ ≠ P βα for a large portion of the parameter space, even if the MNS matrix is real. Oscillation effects computed here may play a large role in interpreting solar WIMP search data from large neutrino telescopes

  2. Single-shot readout of accumulation mode Si/SiGe spin qubits using RF reflectometry

    Science.gov (United States)

    Volk, Christian; Martins, Frederico; Malinowski, Filip; Marcus, Charles M.; Kuemmeth, Ferdinand

    Spin qubits based on gate-defined quantum dots are promising systems for realizing quantum computation. Due to their low concentration of nuclear-spin-carrying isotopes, Si/SiGe heterostructures are of particular interest. While high fidelities have been reported for single-qubit and two-qubit gate operations, qubit initialization and measurement times are relatively slow. In order to develop fast read-out techniques compatible with the operation of spin qubits, we characterize double and triple quantum dots confined in undoped Si/Si0.7Ge0.3 heterostructures using accumulation and depletion gates and a nearby RF charge sensor dot. We implement a RF reflectometry technique that allows single-shot charge read-out at integration times on the order of a few μs. We show our recent advancement towards implementing spin qubits in these structures, including spin-selective single-shot read-out.

  3. A design of 3 GeV CW electron accelerator facility

    International Nuclear Information System (INIS)

    Boldyshev, V.F.; Vishnyakov, V.A.; Gladkikh, P.N.

    1987-01-01

    A further progress of high-energy nuclear physics is related to the possibility of obtaining continuous intense polarized beams of 2-4 GeV electrons and gamma-quanta with low emittance and energy spread. A design of the accelerator facility proposed for these purposes is briefly outlined in this report. The design is based on the upgrading of the 2 GeV Kharkov electron linac (ELA) and the construction of a stretcher ring (SR) at its termination. Operation in the beam storage mode is intended also for nuclear physics experiments using internal targets and for producing synchrotron radiation. Reported are general characteristics of the ELA-SR complex, and the results of numerical computer simulation of a slow beam extraction at the third-order resonance of horizontal free oscillations with due regard for the radiation and synchronous oscillations

  4. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    Science.gov (United States)

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  5. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    DEFF Research Database (Denmark)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

    2012-01-01

    to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

  6. Surface reactivity of Ge[111] for organic functionalization by means of a radical-initiated reaction: A DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Rubio-Pereda, Pamela, E-mail: rubio.pereda@gmail.com [Centro de Investigación Científica y de Educación Superior de Ensenada 3918, Código Postal 22860, Ensenada, Baja California (Mexico); Takeuchi, Noboru, E-mail: takeuchi@cnyn.unam.mx [Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Apartado Postal 14, Código Postal 22800, Ensenada, Baja California (Mexico)

    2016-08-30

    Highlights: • The surface reactivity of the Ge [111] surface is studied with DFT for the attachment of organic molecules by means of a radical-initiated reaction. • A hydrogen vacancy in the hydrogen terminated Ge [111] surface exhibits an accumulation of charge and electron pairing. • These characteristics make the hydrogen vacancy less reactive for the attachment of unsaturated organic molecules. • The adsorption of acetylene is probable to occur while the adsorption of ethylene and styrene is substantially less probable to occur. • The hydrogen terminated Ge [111] surface is found to be less reactive than its two-dimensional analogue, the hydrogen-terminated germanene. - Abstract: The study of interfacial chemistry at semiconductor surfaces has become an important area of research. Functionalities such as molecular recognition, biocompatibility of surfaces, and molecular computing, could be achieved by the combinations of organic chemistry with the semiconductor technology. One way to accomplish this goal is by means of organic functionalization of semiconductor surfaces such as the bulk-terminated germanium surfaces, more specifically the Ge[111]. In this work, we theoretically study, by applying density functional theory, the surface reactivity of the bulk-terminated Ge[111] surface for organic functionalization by means of a radical-initiated reaction of unsaturated molecules such as acetylene, ethylene and styrene with a hydrogen vacancy on a previously hydrogen-terminated Ge[111] surface. Results derived from this work are compared with those obtained in our previous calculations on the germanene surface, following the same chemical route. Our calculations show an accumulation of electronic charge at the H-vacancy having as a result electron pairing due to strong lattice-electron coupling and therefore a diminished surface reactivity. Calculation of the transition states for acetylene and ethylene indicates that the surface reactivity of the

  7. Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

    Science.gov (United States)

    Lucovsky, Gerald; Zeller, Daniel

    2011-09-01

    Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

  8. Magnetic and electrical properties of epitaxial GeMn

    Energy Technology Data Exchange (ETDEWEB)

    Ahlers, Stefan

    2009-01-15

    In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

  9. Extension of the GeN-Foam neutronic solver to SP3 analysis and application to the CROCUS experimental reactor

    International Nuclear Information System (INIS)

    Fiorina, Carlo; Hursin, Mathieu; Pautz, Andreas

    2017-01-01

    Highlights: • Development and verification of an SP 3 solver based on OpenFOAM. • Integration into the GeN-Foam multi-physics platform. • Application of the new GeN-Foam SP 3 solver to the CROCUS reactor. - Abstract: The Laboratory for Reactor Physics and Systems Behaviour at the PSI and at the EPFL has been developing since 2013 a multi-physics platform for coupled reactor analysis named GeN-Foam. The developed tool includes a solver for the eigenvalue and transient solution of multi-group neutron diffusion equations. Although frequently used in reactor analysis, the diffusion theory shows some limitations for core configurations involving strong anisotropies, which is the case for the CROCUS research reactor at the EPFL. The use of an SP 3 approximation to neutron transport can often lead to visible improvements in a code predictive capabilities, especially for one-directional anisotropies, with acceptable added computational cost vs diffusion. Following some modelling issues for the CROCUS reactor, and in order to improve the GeN-Foam modelling capabilities, the GeN-Foam diffusion solver has been extended to allow for SP 3 analyses. The present paper describes such extension and a preliminary verification using a mini-core PWR benchmark. The newly developed solver is then applied to the analysis of the CROCUS experimental reactor and results are compared to Monte Carlo calculations, as well as to the results of the diffusion solver.

  10. Investigation of electrochemical reduction of GeO2 to Ge in molten CaCl2-NaCl

    International Nuclear Information System (INIS)

    Rong, Liangbin; He, Rui; Wang, Zhiyong; Peng, Junjun; Jin, Xianbo; Chen, George Z.

    2014-01-01

    Electrochemical reduction of solid GeO 2 has been investigated in the mixed CaCl 2 -NaCl melt at 1023 K for developing a more efficient process for preparation of Ge. Cyclic voltammetry and potentiostatic electrolysis were applied to study the GeO 2 -loaded metallic cavity electrode. In addition, porous GeO 2 pellets were reduced by potentiostatic and constant cell voltage electrolysis with a graphite anode, and the electrolysis products were analyzed by powder X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectrometry, focusing on understanding the reduction mechanism and the impact of electrode potential on the product purity. It was found that the reduction of GeO 2 to Ge occurred at a potential of about -0.50 V (vs. Ag/Ag + ), but generating various calcium germanates simultaneously, whose reduction was a little more difficult and needed a potential more negative than -1.00 V. However, if the cathode potential exceeded -1.60 V, Ca (or Na) - Ge intermetallic compounds might form. These results gave an appropriate potential range between -1.10 and -1.40 V for the production of pure germanium. Rapid electrolysis of GeO 2 to pure Ge has been realized at a cell voltage of 2.5 V with a current efficiency of about 92%

  11. Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient

    Science.gov (United States)

    Ito, Koichi; Ohta, Akio; Kurosawa, Masashi; Araidai, Masaaki; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-06-01

    The growth of a two-dimensional crystal of Ge atoms on an atomically flat Ag(111) surface has been demonstrated by the thermal annealing of a heteroepitaxial Ag/Ge structure in N2 ambient at atmospheric pressure. The surface morphology and chemical bonding features of heteroepitaxial Ag(111) grown on wet-cleaned Ge(111) after annealing at different temperatures and for various times have been systematically investigated to control the surface segregation of Ge atoms and the planarization of the heteroepitaxial Ag(111) surface.

  12. Shell model description of Ge isotopes

    International Nuclear Information System (INIS)

    Hirsch, J G; Srivastava, P C

    2012-01-01

    A shell model study of the low energy region of the spectra in Ge isotopes for 38 ≤ N ≤ 50 is presented, analyzing the excitation energies, quadrupole moments, B(E2) values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces. We have used two effective shell model interactions, JUN45 and jj44b, for the valence space f 5/2 pg 9/2 without truncation. To include the proton subshell f 7/2 in valence space we have employed the fpg effective interaction due to Sorlin et al., with 48 Ca as a core and a truncation in the number of excited particles.

  13. 3 GeV Injector Design Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  14. Quantitative Auger analysis of Nb-Ge superconducting alloys

    International Nuclear Information System (INIS)

    Buitrago, R.H.

    1980-01-01

    The feasibility of using Auger electron analysis for quantitative analysis was investigated by studying Nb 3 Ge thin-film Auger data with different approaches. A method base on elemental standards gave consistent quantitative values with reported Nb-Ge data. Alloy sputter yields were also calculated and results were consistent with those for pure elements

  15. 75 FR 21680 - GE-Hitachi Global Laser Enrichment LLC;

    Science.gov (United States)

    2010-04-26

    ... Global Laser Enrichment LLC; Establishment of Atomic Safety and Licensing Board Pursuant to delegation by... over the following proceeding: GE-Hitachi Global Laser Enrichment LLC (GLE Commercial Facility) This... application of GE-Hitachi Global Laser Enrichment LLC for a license to possess and use source, byproduct, and...

  16. Thermoelectric Performance of Na-Doped GeSe

    NARCIS (Netherlands)

    Shaabani, Laaya; Aminorroaya-Yamini, Sima; Byrnes, Jacob; Akbar Nezhad, Ali; Blake, Graeme R

    2017-01-01

    Recently, hole-doped GeSe materials have been predicted to exhibit extraordinary thermoelectric performance owing largely to extremely low thermal conductivity. However, experimental research on the thermoelectric properties of GeSe has received less attention. Here, we have synthesized

  17. Stress evolution of Ge nanocrystals in dielectric matrices

    Science.gov (United States)

    Bahariqushchi, Rahim; Raciti, Rosario; Emre Kasapoğlu, Ahmet; Gür, Emre; Sezen, Meltem; Kalay, Eren; Mirabella, Salvatore; Aydinli, A.

    2018-05-01

    Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.

  18. Wide-band neutrino beams at 1000 GeV

    International Nuclear Information System (INIS)

    Malensek, A.; Stutte, L.

    1983-01-01

    In a previous publication, S. Mori discussed various broad-band neutrino and antineutrino beams using 1000 GeV protons on target. A new beam (SST) has been designed which provides the same neutrino flux as the quadrupole triplet (QT) while suppressing the wrong sign flux by a factor of 18. It also provides more than twice as much high energy antineutrino flux than the sign-selected bare target (SSBT) and in addition, has better neutrino suppression. While it is possible to increase the flux obtained from the single horn system over that previously described, the conclusion which states any horn focussing system seems to be of marginal use for Tevatron neutrino physics, is unchanged. Neutrino and antineutrino event rates and wrong sign backgrounds were computed using NUADA for a 100 metric ton detector of radius 1.5 meters. Due to radiation considerations and the existing transformer location, the horn beam is placed in its usual position inside the Target Tube. All other beams are placed in Fronthall. Thus, for the wide-band Fronthall trains a decay distance of 520 meters is used, versus 400 meters for the horn train

  19. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    International Nuclear Information System (INIS)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

    2012-01-01

    We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

  20. Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation

    Energy Technology Data Exchange (ETDEWEB)

    Satoh, Yuhki, E-mail: yu-ki@ecei.tohoku.ac.jp; Itoh, Yuhki; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-03-01

    To form Ge dots on a Si substrate, the effect of thermal reaction temperature of sub-monolayer C with Si (100) was investigated and the deposited Ge thickness was optimized. The samples were prepared by solid-source molecular beam epitaxy with an electron-beam gun for C sublimation and a Knudsen cell for Ge evaporation. C of 0.25 ML was deposited on Si (100) at a substrate temperature of 200 °C, followed by a high-temperature treatment at the reaction temperature (T{sub R}) of 650–1000 °C to create Si–C bonds. Ge equivalent to 2 to 5 nm thick was subsequently deposited at 550 °C. Small and dense dots were obtained for T{sub R} = 750 °C but the dot density decreased and the dot diameter varied widely in the case of lower and higher T{sub R}. A dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge deposition equivalent to 3 to 5 nm thick and a standard deviation of dot diameter was the lowest of 10 nm for 5 nm thick Ge. These results mean that C-mediated Ge dot formation was strongly influenced not only by the c(4 × 4) reconstruction condition through the Si–C reaction but also the relationship between the Ge deposition thickness and the exposed Si (100)-(2 × 1) surface area. - Highlights: • The effect of Si–C reaction temperature on Ge dot formation was investigated. • Small and dense dots were obtained for T{sub R} = 750 °C. • The dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge = 3 to 5 nm. • The standard deviation of dot diameter was the lowest of 10 nm at Ge = 5 nm.

  1. GeNF - Experimental report 2006

    International Nuclear Information System (INIS)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R.

    2007-01-01

    At the Geesthacht Neutron Facility GeNF about 212 experiments were performed in 2006 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 71 contributions in the present annual experimental report for the year 2006. The contributions may contain one or also several combined experiments. During 2006 the GKSS research reactor FRG-1 achieved an operation time of 197 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10 14 thermal neutrons/cm 2 s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at ARES-2, TEX-2, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR, NeRo, POLDI and ROeDI. The thoroughly upgraded residual stress diffractomer ARES-2 went in full operation in spring 2006 as well as the new neutron tomography device at GENRA-3. The installation of modern experiment control hardware and software based on LabView was completed on all designated instruments. In the appendices I and II the experimental reports of REFSANS at FRM II are attached as well as of the GKSS outstation HARWI-II at DESY. Both instruments started full operation in 2006. (orig.)

  2. GeNF - experimental report 2003

    International Nuclear Information System (INIS)

    Schreyer, A.; Vollbrandt, J.; Willumeit, R.

    2004-01-01

    At the Geesthacht Neutron Facility GeNF about 210 experiments were performed in 2003 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guest and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2003. The contributions may contain one or also several combined experiments. During 2003 the GKSS research reactor FRG-1 achieved an operation time of 252 days at the full 5 MW reactor power providing a neutron flux of ca. 1,4 x 10 14 thermal neutrons / cm 2 s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of metal alloys, the analysis of stresses in welds and technical structures at ARES, FSS, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR and ROeDI. The reflectomer TOREMA was thoroughly upgraded to the instrument NeRo and now offers new measurement possibilities. In the appendices the progress of the project REFSANS at FRM-II is reported as well as the experimental activities of the newly installed GKSS outstation HARWI-II at DESY. (orig.)

  3. GeNF - experimental report 2003

    Energy Technology Data Exchange (ETDEWEB)

    Schreyer, A; Vollbrandt, J; Willumeit, R [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. for Materials Research

    2004-07-01

    At the Geesthacht Neutron Facility GeNF about 210 experiments were performed in 2003 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guest and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2003. The contributions may contain one or also several combined experiments. During 2003 the GKSS research reactor FRG-1 achieved an operation time of 252 days at the full 5 MW reactor power providing a neutron flux of ca. 1,4 x 10{sup 14} thermal neutrons / cm{sup 2} s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of metal alloys, the analysis of stresses in welds and technical structures at ARES, FSS, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR and ROeDI. The reflectomer TOREMA was thoroughly upgraded to the instrument NeRo and now offers new measurement possibilities. In the appendices the progress of the project REFSANS at FRM-II is reported as well as the experimental activities of the newly installed GKSS outstation HARWI-II at DESY. (orig.)

  4. GeNF - Experimental report 2006

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P K; Schreyer, A; Willumeit, R [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. of Materials Research

    2007-07-01

    At the Geesthacht Neutron Facility GeNF about 212 experiments were performed in 2006 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 71 contributions in the present annual experimental report for the year 2006. The contributions may contain one or also several combined experiments. During 2006 the GKSS research reactor FRG-1 achieved an operation time of 197 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at ARES-2, TEX-2, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR, NeRo, POLDI and ROeDI. The thoroughly upgraded residual stress diffractomer ARES-2 went in full operation in spring 2006 as well as the new neutron tomography device at GENRA-3. The installation of modern experiment control hardware and software based on LabView was completed on all designated instruments. In the appendices I and II the experimental reports of REFSANS at FRM II are attached as well as of the GKSS outstation HARWI-II at DESY. Both instruments started full operation in 2006. (orig.)

  5. Crystal structure of LaFe5Ge3O15 = LaFe5[GeO4][Ge2O7]O4

    International Nuclear Information System (INIS)

    Genkina, E.A.; Maksimov, B.A.; Mill, B.V.

    1991-01-01

    The authors have determined the structure of a new lanthanum-iron germanate LaFe 5 [GeO 4 ][GeO 4 ][Ge 2 O 7 ]O 4 (a = 18.040(4), b = 17.012(4), c = 7.591(1) angstrom, V = 2330.2(9) angstrom 3 , Z = 8, ρ t = 4.99 g/cm 3 , space ground Cmca, 1976 I hkl ≥ 3 σ(I), R = 4.5%). The compound is interesting because the framework simultaneously contains ortho- and diorthogroups of Ge and because of a classical set of coordination numbers (4,5,6) characteristic of trivalent iron within the composition of one structure. The coordination polyhedron of La has nine vertices

  6. Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge-Si alloys

    Science.gov (United States)

    Herlach, Dieter M.; Simons, Daniel; Pichon, Pierre-Yves

    2018-01-01

    We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge100-xSix (x = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

  7. 20 GeV e+ x 400 GeV p: some synchrotron radiation considerations

    International Nuclear Information System (INIS)

    Humphrey, J.W.; Limon, P.J.

    1977-01-01

    The possibility of a 20 GeV electron ring in the 400 x 400 GeV 2 ISABELLE tunnel is considered. The conclusions that can be drawn from these considerations are: (1) much work remains to be done on the implications of synchrotron radiation for insertion design; (2) in the absence of considerations concerning insertion areas with longitudinal polarization, placing the electron ring in the same vertical plane as the electron ring is mildly favored; (3) creating insertions for longitudinally polarized electrons is difficult, and elementary considerations indicate that the synchrotron radiation flux in the insertion region will increase by a factor of approximately 100 and the luminosity may decrease by a factor of approximately 10; and (4) the creation of insertions for longitudinally polarized electrons favors placing the electron ring in the same horizontal plane as the proton ring

  8. Determination of core level line widths in XPS of GeS and GeSe

    International Nuclear Information System (INIS)

    Viljoen, P.E.

    1981-01-01

    Measured X-ray photoelectron spectra are broadened owing to several factors. They can be regarded as the sums of the instrument response functions and the finite source widths. By measuring the response function and deconvoluting the measured peak, the form of the measured peak, the instrument function and the deconvoluted line were determined. The former two seem to have a Gauss and the latter a Lorentz form. The X-ray source is known to have a Lorentz form. A simple method, using the shapes of all these lines, is proposed to determine the line width. Applied to GeS and GeSe lines it gives values that agree quite well with other determinations. Strictly speaking, the method is only applicable to our or other similar spectrometers, but it can be generally applied if the line shapes are known or can be determined [af

  9. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

  10. Water-vapor-enhanced growth of Ge-GeOx core-shell nanowires and Si1-xGexOy nanowires

    International Nuclear Information System (INIS)

    Hsu, T-J; Ko, C-Y; Lin, W-T

    2007-01-01

    The effects of moist Ar on the growth of Ge-GeO x core-shell nanowires (Ge-GeO x NWs) and Si 1-x Ge x O y nanowires (SiGeONWs) on Si substrates without adding a metal catalyst via the carbothermal reduction of GeO 2 powders at 1100 deg. C were studied. No significant nanowires were grown in dry Ar at a flow rate of 100-300 sccm until a bit of water in the range of 0.5-2 ml was loaded into the furnace. More water suppressed the growth of nanowires because of the exhaustion of more graphite powder. The growth of Ge-GeO x NWs and SiGeONWs follows the vapor-solid and vapor-liquid-solid processes, respectively. The present study showed that the water vapor serves as an oxidizer as well as a reducer at 1100 deg. C in enhancing the growth of SiGeONWs and Ge-GeO x NWs, respectively. The growth mechanisms of Ge-GeO x NWs and SiGeONWs are also discussed

  11. Band structure analysis in SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

    2012-06-05

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  12. Effects of hydrogenation on magnetism of UNiGe

    Energy Technology Data Exchange (ETDEWEB)

    Adamska, A.M., E-mail: anna@mag.mff.cuni.cz [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30 059 Cracow (Poland); Havela, L. [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Prochazka, J. [Faculty of Sports and Physical Education, Charles University, Jose Martiho 31, 16252, Prague 6 (Czech Republic); Andreev, A.V. [Institute of Physics, Academy of Sciences, Na Slovance 2, 18221 Prague (Czech Republic); Skourski, Y. [Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany)

    2011-12-15

    U-based intermetallic compound UNiGe absorbs hydrogen up to the stoichiometry UNiGeH{sub 1.2}. In analogy to other compounds with the TiNiSi-type of structure, the structure is modified into hexagonal. The zig-zag U-chains are stretched, the U-U spacing is largely enhanced and the ordering temperature increases up to 100 K. The ordered state has a spontaneous moment, but it is unlikely to be a simple ferromagnet. - Highlights: > UNiGe exhibits a variety of magnetic properties. > Hydrogenation modifies the crystal, electronic structure, and the magnetic properties. > Upon hydrogenation, the crystal symmetry of UNiGe increases from orthorhombic to hexagonal. > Magnetic ordering temperature of UNiGe (T{sub N}=44 K) is double in the hydride, possible second phase transition.

  13. Band structure analysis in SiGe nanowires

    International Nuclear Information System (INIS)

    Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

    2012-01-01

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  14. First evidence of low energy enhancement in Ge isotopes

    Directory of Open Access Journals (Sweden)

    Renstrøm T.

    2015-01-01

    Full Text Available The γ-strength functions and level densities of 73,74Ge have been extracted from particle-γ coincidence data using the Oslo method. In addition the γ-strength function of 74Ge above the neutron separation threshold, Sn = 10.196 MeV has been extracted from photoneutron measurements. When combined, these two experiments give a γ-strength function covering the energy range of ∼1-13 MeV for 74Ge. This thorough investigation of 74Ge is a part of an international campaign to study the previously reported low energy enhancement in this mass region in the γ-strength function from ∼3MeV towards lower γ energies. The obtained data show that both 73,74Ge display an increase in strength at low γ energies.

  15. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Science.gov (United States)

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  16. Development of GE90 engine with largest thrust. GE90 engine no kaihatsu jokyo

    Energy Technology Data Exchange (ETDEWEB)

    Aono, H [Ishikawajima-Harima Heavy Industries, Co. Ltd., Tokyo (Japan)

    1994-05-01

    The present paper explained the turbofan engine GE90 which is being developed by General Electric Co., USA. That engine is to meet the thrust (takeoff thrust) of 300 to 530kN as required for the new-generation wide-fuselage civil transport plane which is being designed for its planned operation in the 1990's. In April, 1991, the world's strongest thrust of 480kN was achieved with engine elements also confirmed through element test. Thereafter, the engine underwent a flying test on board of Boeing 747 to materialize the planned operation in 1995. Made to be 9 in by-pass ratio and about 40 in overall pressure ratio, the GE90 was given the concept that advantage could be secured in both propulsive efficiency and thermal efficiency. That concept could be materialized by the development of composite fan blade technology and energy-efficient technology which were both demonstrated with an unducted fan. In spite of its pressure ratio of 22, the GE90's high pressure compressor demonstrates its polytropic efficiency which is equal to that of the low pressure ratio compressor. 3 refs., 19 figs., 1 tab.

  17. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  18. GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

    2016-07-11

    The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

  19. Strain-free Ge/GeSiSn Quantum Cascade Lasers Based on L-Valley Intersubband Transitions

    National Research Council Canada - National Science Library

    Soret, R. A; Sun, G; Cheng, H; Menendez, J; Khurgin, J

    2007-01-01

    The authors propose a Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a clean offset of 150 meV situated below other energy valleys Gamma and X...

  20. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10 8 photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H 2 atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs

  1. Improving the electrode performance of Ge through Ge@C core-shell nanoparticles and graphene networks.

    Science.gov (United States)

    Xue, Ding-Jiang; Xin, Sen; Yan, Yang; Jiang, Ke-Cheng; Yin, Ya-Xia; Guo, Yu-Guo; Wan, Li-Jun

    2012-02-08

    Germanium is a promising high-capacity anode material for lithium ion batteries, but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. A double protection strategy to improve the electrode performance of Ge through the use of Ge@C core-shell nanostructures and reduced graphene oxide (RGO) networks has been developed. The as-synthesized Ge@C/RGO nanocomposite showed excellent cycling performance and rate capability in comparison with Ge@C nanoparticles when used as an anode material for Li ion batteries, which can be attributed to the electronically conductive and elastic RGO networks in addition to the carbon shells and small particle sizes of Ge. The strategy is simple yet very effective, and because of its versatility, it may be extended to other high-capacity electrode materials with large volume variations and low electrical conductivities.

  2. GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    Science.gov (United States)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-01

    Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO2/Si counterparts.

  3. Tunneling spectroscopy of a phosphorus impurity atom on the Ge(111)-(2 × 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Savinov, S. V.; Oreshkin, A. I., E-mail: oreshkin@spmlab.phys.msu.su, E-mail: oreshkin@spmlab.ru [Moscow State University (Russian Federation); Oreshkin, S. I. [Moscow State University, Sternberg Astronomical Institute (Russian Federation); Haesendonck, C. van [Laboratorium voor Stoffysica en Magnetisme (Belgium)

    2015-06-15

    We numerically model the Ge(111)-(2 × 1) surface electronic properties in the vicinity of a P donor impurity atom located near the surface. We find a notable increase in the surface local density of states (LDOS) around the surface dopant near the bottom of the empty surface state band π*, which we call a split state due to its limited spatial extent and energetic position inside the band gap. We show that despite the well-established bulk donor impurity energy level position at the very bottom of the conduction band, a surface donor impurity on the Ge(111)-(2 × 1) surface might produce an energy level below the Fermi energy, depending on the impurity atom local environment. It is demonstrated that the impurity located in subsurface atomic layers is visible in a scanning tunneling microscope (STM) experiment on the Ge(111)-(2 × 1) surface. The quasi-1D character of the impurity image, observed in STM experiments, is confirmed by our computer simulations with a note that a few π-bonded dimer rows may be affected by the presence of the impurity atom. We elaborate a model that allows classifying atoms on the experimental low-temperature STM image. We show the presence of spatial oscillations of the LDOS by the density-functional theory method.

  4. Influence of Li10GeP2S12-type solid electrolyte on cell thermodynamics

    Directory of Open Access Journals (Sweden)

    Jishnu Bhattacharya

    2016-06-01

    Full Text Available We elucidate few critical facts about the lithium superionic conductor (Li10GeP2S12 and few other compounds of the same family as the electrolyte in Li-ion cells. The dimensionality of diffusion process and existence of ‘structural’ lithiums are not well understood in this material. From the ab-initio MD simulations, we find that the material transport Li-ions predominantly in the crystallographic c-direction. Nevertheless, the cross-channel diffusion is significant as well. We explored the mobility of individual Li-ions and do not find evidence that supports the proposition of structural Li-ions in LGPS. We find nominal effect of local Ge-P ordering and of Li-concentration change on diffusivity, which not only provides information about the invariance of diffusivity at different conditions of operation, but also ensures that identification of the ground state structure in LGPS having partially occupied Li and Ge/P sublattices should have minimal effect on the diffusion analysis. We computed the dilute Li insertion and extraction voltages for LGPS from ab-initio total energy calculation. The dilute voltages indicate that the material is prone to react by exchanging Li-ions with the electrodes at typical operating range of voltages indicating formation of some interphase at the electrode-electrolyte interface, which necessitates further experimental investigation

  5. Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

    Science.gov (United States)

    Yang, Zhen

    Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

  6. Prototype sector magnets for the GeV electron microtron (GEM)

    International Nuclear Information System (INIS)

    Wehrle, R.B.; Norem, J.H.; Praeg, W.F.; Swanstrom, R.H.; Thompson, K.M.

    1983-01-01

    Three prototypes of the sector magnets for GeV Electon Microtron accelerators have been designed. One has been built and two are being constructed. The first is a full scale, 168 ton prototype for one-half of a 2 GeV Double Sided Microtron (DSM) sector magnet. The successful fabrication and testing of the pole pieces for this prototype has demonstrated that their required close tolerances for flatness and parallelism can be met. The second magnet is an approximate two-thirds scale model of one step at the low energy end of the hexatron sector magnet designed for the 4 GeV Electron Microtron (GEM). The measured fields demonstrate that the field falls off faster than an Enge-short-tail and error fields are at low levels and are controllable. A third prototype magnet exactly duplicates the full scale geometry of the first three full orbits of the GEM sector magnet from entrance to exit points. It will permit high precision measurements and corrections of field errors and verify the 3-D computer program, TOSCA

  7. Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2016-03-01

    Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

  8. The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-02-24

    The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  9. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-01-01

    The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

  10. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

    Directory of Open Access Journals (Sweden)

    Mastura Shafinaz Zainal Abidin

    2014-02-01

    Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  11. Software Tools for Emittance Measurement and Matching for 12 GeV CEBAF

    Energy Technology Data Exchange (ETDEWEB)

    Turner, Dennis L. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2016-05-01

    This paper discusses model-driven setup of the Continuous Electron Beam Accelerator Facility (CEBAF) for the 12GeV era, focusing on qsUtility. qsUtility is a set of software tools created to perform emittance measurements, analyze those measurements, and compute optics corrections based upon the measurements.qsUtility was developed as a toolset to facilitate reducing machine configuration time and reproducibility by way of an accurate accelerator model, and to provide Operations staff with tools to measure and correct machine optics with little or no assistance from optics experts.

  12. Revisiting light stringy states in view of the 750 GeV diphoton excess

    Energy Technology Data Exchange (ETDEWEB)

    Anastasopoulos, Pascal, E-mail: pascal@hep.itp.tuwien.ac.at [Technische Universität Wien, Institut für Theoretische Physik, A-1040 Vienna (Austria); Bianchi, Massimo, E-mail: massimo.bianchi@roma2.infn.it [Dipartimento di Fisica and Sezione I.N.F.N., Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma (Italy)

    2016-10-15

    We investigate light massive string states that appear at brane intersections. They replicate the massless spectrum in a richer fashion and may be parametrically lighter than standard Regge excitations. We identify the first few physical states and determine their BRST invariant vertex operators. In the supersymmetric case we reconstruct the super-multiplet structure. We then compute some simple interactions, such as the decay rate of a massive scalar or vector into two massless fermions. Finally we suggest an alternative interpretation of the 750 GeV diphoton excess at LHC in terms of a light massive string state, a replica of the Standard Model Higgs.

  13. Pulse shape discrimination performance of inverted coaxial Ge detectors

    Science.gov (United States)

    Domula, A.; Hult, M.; Kermaïdic, Y.; Marissens, G.; Schwingenheuer, B.; Wester, T.; Zuber, K.

    2018-05-01

    We report on the characterization of two inverted coaxial Ge detectors in the context of being employed in future 76Ge neutrinoless double beta (0 νββ) decay experiments. It is an advantage that such detectors can be produced with bigger Ge mass as compared to the planar Broad Energy Ge (BEGe) or p-type Point Contact (PPC) detectors that are currently used in the GERDA and MAJORANA DEMONSTRATOR 0 νββ decay experiments respectively. This will result in a lower background for the search of 0 νββ decay due to a reduction of detector surface to volume ratio, cables, electronics and holders which are dominating nearby radioactive sources. The measured resolution near the 76Ge Q-value at 2039 keV is 2.3 keV FWHM and their pulse-shape discrimination of background events are similar to BEGe and PPC detectors. It is concluded that this type of Ge-detector is suitable for usage in 76Ge 0 νββ decay experiments.

  14. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  15. An investigation of proton pair correlations relevant to the neutrinoless double beta decay of 76Ge

    Science.gov (United States)

    Ticehurst, David R.

    The observation of neutrinoless double beta decay (0nubetabeta ) would demonstrate that the neutrino is a Majorana particle and allow determination of its mass by comparing the measured decay rate to the calculated rate. The main uncertainty in the calculation of the 0 nubetabeta rate is due to uncertainties in the nuclear structure models used in the computation of the nuclear matrix elements for the decay process. This project tested the validity of using wavefunctions for the nuclear states involved in the 0nubetabeta process that are based on a first-order application of the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. In the BCS approximation, most of the strength for two-nucleon transfer reactions should be for transitions to the 0 + ground state of the final nucleus (i.e., little strength should go to the 0+ excited states). This experiment measured the strength to the first 0+ excited state for the 74Ge( 3He,n)76Se and 76Ge( 3He,n)78Se reactions relative to the strength for transition to the 0+ ground state in selenium. For both nuclei, and at 3He beam energies of 15 and 21 MeV, the observed relative strength for transfer to the first 0+ excited state was less than 13%. This result supports the validity of using the BCS approximation to describe the ground state of both 76Se and 78Se and is consistent with the results of recent ( 3He,n) cross section measurements on 74Ge and 76Ge. In addition, the magnitude and shape of the measured angular distributions suggest that contribution of the sequential two-nucleon transfer process, which is an indicator of long-range nucleon-nucleon correlations, is over-predicted by the DWBA code FRESCO.

  16. GeNF - Experimental report 2008

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, Philipp Klaus; Mueller, Martin; Willumeit, Regine; Schreyer, Andreas [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2009-12-11

    At the Geesthacht Neutron Facility GeNF about 182 experiments were performed in 2008 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests, by GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2008. The contributions may contain several combined experiments. During 2008 the GKSS research reactor FRG-1 achieved an operation time of 175 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4.10{sup 14} thermal neutrons/cm{sup 2} s. The focus of the in house R and D work at GeNF instruments in 2008 was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware (e.g. sample environments, like magnets, cryostats or furnaces) and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. The massive activity at the FRM II outstation is documented by the increasing number of REFSANS reports, accumulated to nine. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at the synchrotron storage ring DORIS III at DESY is accepted very well by the community and is heavily overbooked in all fields (tomography, diffraction, etc.). After an 8-month shutdown period for an upgrade in the frame

  17. GeNF - Experimental report 2008

    International Nuclear Information System (INIS)

    Pranzas, Philipp Klaus; Mueller, Martin; Willumeit, Regine; Schreyer, Andreas

    2009-01-01

    At the Geesthacht Neutron Facility GeNF about 182 experiments were performed in 2008 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests, by GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2008. The contributions may contain several combined experiments. During 2008 the GKSS research reactor FRG-1 achieved an operation time of 175 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4.10 14 thermal neutrons/cm 2 s. The focus of the in house R and D work at GeNF instruments in 2008 was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware (e.g. sample environments, like magnets, cryostats or furnaces) and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. The massive activity at the FRM II outstation is documented by the increasing number of REFSANS reports, accumulated to nine. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at the synchrotron storage ring DORIS III at DESY is accepted very well by the community and is heavily overbooked in all fields (tomography, diffraction, etc.). After an 8-month shutdown period for an upgrade in the frame of the

  18. GeNF - Experimental report 2007

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P K; Schreyer, A; Willumeit, R [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2008-11-05

    At the Geesthacht Neutron Facility GeNF about 203 experiments were performed in 2007 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 70 contributions in the present annual experimental report for the year 2007. The contributions may contain one or also several combined experiments. During 2007 the GKSS research reactor FRG-1 achieved an operation time of 204 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. In May/June 2007 the FRG-1 was upgraded with a new cold neutron source yielding a flux increase at the five instruments using cold neutrons of up to 40 %. The focus of the in house R and D work at GeNF instruments in 2007 was the characterisation of nano-structures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. At the neutron reflectometer REFSANS at FRM II measurements are possible using a broad range of the scattering vector with reflectivities up to 10{sup -7}. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at DESY is accepted very well by the community and is overbooked in all fields

  19. GeNF - Experimental report 2007

    International Nuclear Information System (INIS)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R.

    2008-01-01

    At the Geesthacht Neutron Facility GeNF about 203 experiments were performed in 2007 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 70 contributions in the present annual experimental report for the year 2007. The contributions may contain one or also several combined experiments. During 2007 the GKSS research reactor FRG-1 achieved an operation time of 204 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10 14 thermal neutrons/cm 2 s. In May/June 2007 the FRG-1 was upgraded with a new cold neutron source yielding a flux increase at the five instruments using cold neutrons of up to 40 %. The focus of the in house R and D work at GeNF instruments in 2007 was the characterisation of nano-structures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. At the neutron reflectometer REFSANS at FRM II measurements are possible using a broad range of the scattering vector with reflectivities up to 10 -7 . Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at DESY is accepted very well by the community and is overbooked in all fields (tomography

  20. Study of the interaction{pi}{sup +}p at 1.2 GeV/c {pi}{sup +} laboratory momentum; Estudio de la inteeraccion {pi}{sup +} p a 1,2 GeV/c

    Energy Technology Data Exchange (ETDEWEB)

    Ladron de Guevara, P

    1973-07-01

    We present the main results of a 0.33 events/urban experiment of {pi}{sup +} interactions in hydrogen at 1.2 GeV/c, using the 80 cm Saclay bubble chamber. the partial cross sections of the different reactions and the elastic differential cross section are computed by normalizing to the total cross section obtained by other groups. (Author) 34 refs.

  1. A compilation of K+p --> K0 DELTA++ cross sections below 2 GeV/c

    CERN Document Server

    Giacomelli, G; Piccinini, M; Rimondi, F; Serra-Lugaresi, P

    1976-01-01

    Data published up to June 1976 on the quasi-two-body reaction K+p --> K0 DELTA++, with DELTA++ -->ppi+, are compiled for laboratory momenta from 0.7 to 2 GeV/c. They include integrated cross-sections, differencial cross-sections, average and differential density matrix elements, as well as coefficients of the Legendre polynomial expensions of the production differential distributions. The data are presented in the form og graphs and computer-produced tables. The method of computation is the same as in a previous report (CERN-HERA-75-1) on K+N cross-sections below2 GeV/c, to which the reader is referred for details on cards formats, notations, etc.

  2. Computer control system of TRISTAN

    International Nuclear Information System (INIS)

    Kurokawa, Shin-ichi; Shinomoto, Manabu; Kurihara, Michio; Sakai, Hiroshi.

    1984-01-01

    For the operation of a large accelerator, it is necessary to connect an enormous quantity of electro-magnets, power sources, vacuum equipment, high frequency accelerator and so on and to control them harmoniously. For the purpose, a number of computers are adopted, and connected with a network, in this way, a large computer system for laboratory automation which integrates and controls the whole system is constructed. As a distributed system of large scale, the functions such as electro-magnet control, file processing and operation control are assigned to respective computers, and the total control is made feasible by network connection, at the same time, as the interface with controlled equipment, the CAMAC (computer-aided measurement and control) is adopted to ensure the flexibility and the possibility of expansion of the system. Moreover, the language ''NODAL'' having network support function was developed so as to easily make software without considering the composition of more complex distributed system. The accelerator in the TRISTAN project is composed of an electron linear accelerator, an accumulation ring of 6 GeV and a main ring of 30 GeV. Two ring type accelerators must be synchronously operated as one body, and are controlled with one computer system. The hardware and software are outlined. (Kako, I.)

  3. Efficient tunable luminescence of SiGe alloy sheet polymers

    International Nuclear Information System (INIS)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-01-01

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

  4. A CoGeNT confirmation of the DAMA signal

    International Nuclear Information System (INIS)

    Foot, R.

    2010-01-01

    The CoGeNT Collaboration has recently reported a rising low energy spectrum in their ultra low noise Germanium detector. This is particularly interesting as the energy range probed by CoGeNT overlaps with the energy region in which DAMA has observed their annual modulation signal. We show that the mirror dark matter candidate can simultaneously explain both the DAMA annual modulation signal and the rising low energy spectrum observed by CoGeNT. This constitutes a model dependent confirmation of the DAMA signal and adds weight to the mirror dark matter paradigm.

  5. Development of high responsivity Ge:Ga photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

    1984-06-01

    Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

  6. Spin-polarized photoemission from SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  7. Soft chemistry routes to GeS2 nanoparticles

    Science.gov (United States)

    Courthéoux, Laurence; Mathiaud, Romain; Ribes, Michel; Pradel, Annie

    2018-04-01

    Spherical GeS2 particles are prepared by a low temperature liquid route with TEOG as germanium precursor and either H2S or thioacetamide (TAA) as sulfur precursors. The size and agglomeration of the particles change depending upon the temperature and nature of the solvent. Most synthesis lead to preparing amorphous GeS2. When the reaction kinetic is slowed down by using TAA at 25 °C, the obtained GeS2 product presents a larger order in the range of few Å as proven by Raman spectroscopy, even though it is still an amorphous compound as suggested by X-Ray diffraction and TEM experiments.

  8. Gadolinium scandium germanide, Gd2Sc3Ge4

    Directory of Open Access Journals (Sweden)

    Sumohan Misra

    2009-04-01

    Full Text Available Gd2Sc3Ge4 adopts the orthorhombic Pu5Rh4-type structure. The crystal structure contains six sites in the asymmetric unit: two sites are statistically occupied by rare-earth atoms with Gd:Sc ratios of 0.967 (4:0.033 (4 and 0.031 (3:0.969 (3, one site (.m. symmetry is occupied by Sc atoms, and three distinct sites (two of which with .m. symmetry are occupied by Ge atoms. The rare-earth atoms form two-dimensional slabs with Ge atoms occupying the trigonal-prismatic voids.

  9. Muonium hyperfine parameters in Si1-x Ge x alloys

    International Nuclear Information System (INIS)

    King, Philip; Lichti, Roger; Cottrell, Stephen; Yonenaga, Ichiro

    2006-01-01

    We present studies of muonium behaviour in bulk, Czochralski-grown Si 1- x Ge x alloy material, focusing in particular on the hyperfine parameter of the tetrahedral muonium species. In contrast to the bond-centred species, the hyperfine parameter of the tetrahedral-site muonium centre (Mu T ) appears to vary non-linearly with alloy composition. The temperature dependence of the Mu T hyperfine parameter observed in low-Ge alloy material is compared with that seen in pure Si, and previous models of the Mu T behaviour in Si are discussed in the light of results from Si 1- x Ge x alloys

  10. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  11. High-pressure structural behaviour of nanocrystalline Ge

    International Nuclear Information System (INIS)

    Wang, H; Liu, J F; He, Y; Wang, Y; Chen, W; Jiang, J Z; Olsen, J Staun; Gerward, L

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition pressure and the bulk modulus

  12. Interaction of slow neutrons with 74Ge single crystals

    International Nuclear Information System (INIS)

    Pshenichnyj, V.A.; Pak En Men; Vorobkalo, F.M.; Vertebnyj, V.P.

    1986-01-01

    The total cross section of monocrystal from germanium-74 isotope by the time-of-flight method in the 0.017-10 eV range is measured. At room temperatures the above monocrystal possesses the capability of separating from the white reactor spectrum intensive beams of thermal neutrons. It is shown that the 74 Ge monocrystal by its filtering properties approaches to the Si monocrystal. The observed cross sections for Si, Ge, 74 Ge monocrystals in the thermal region of neutron energy are indicated in the study

  13. Recent progress in GeSi electro-absorption modulators

    International Nuclear Information System (INIS)

    Chaisakul, Papichaya; Marris-Morini, Delphine; Rouifed, Mohamed-Said; Coudevylle, Jean-René; Roux, Xavier Le; Edmond, Samson; Vivien, Laurent; Frigerio, Jacopo; Chrastina, Daniel; Isella, Giovanni

    2014-01-01

    Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz–Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic. (review)

  14. XCOM: Photon cross sections on a personal computer

    International Nuclear Information System (INIS)

    Berger, M.J.; Hubbell, J.H.

    1987-07-01

    A computer program and data base are presented which can be used to calculate, with a personal computer, photon cross sections for scattering, photoelectric absorption and pair production, as well as total attenuation coefficients, in any element, compound or mixture, at energies from 1 keV to 100 GeV

  15. The metallization of Ge-doped plastics

    International Nuclear Information System (INIS)

    Huser, G.; Recoules, V.; Salin, G.; Galmiche, D.; Ozaki, N.; Miyanishi, K.; Kodama, R.; Sano, T.; Sakawa, Y.

    2013-01-01

    Ge-doped plastics are used in inertial fusion targets. Doped plastics are complex mixtures and the validation of their properties in a broad range of thermodynamic conditions requires an experimental validation. The metallization of plastics appears when shock waves generated by power lasers create pressures around 10 6 bar and temperatures around 10.000 K. The shock front propagating in the plastic becomes reflective. We have performed experiments to test the mathematical models describing the compressibility of such materials. We have compared the Thomas-Fermi model that is implemented in the QEOS formalism (Quotidian Equation of State) with 2 other models: the Sommerfeld metal model and a model that allows the closure of the semi-conducting gap. It appears that the Thomas-Fermi model predicts satisfactorily the compressibility of a mixture compressed at a few 10 6 bars, but over-estimates the average ionisation by a factor up to 10 which leads to an over-estimation of the metallization step

  16. Computer control of rf at SLAC

    International Nuclear Information System (INIS)

    Schwarz, H.D.

    1985-03-01

    The Stanford Linear Accelerator is presently upgraded for the SLAC Linear Collider project. The energy is to be increased from approximately 31 GeV to 50 GeV. Two electron beams and one positron beam are to be accelerated with high demands on the quality of the beams. The beam specifications are shown. To meet these specifications, all parameters influencing the beams have to be under tight control and continuous surveillance. This task is accomplished by a new computer system implemented at SLAC which has, among many other functions, control over rf accelerating fields. 13 refs., 8 figs., 2 tabs

  17. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

    2015-10-14

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

  18. Single ferromagnetic fluctuations in UCoGe revealed by 73Ge- and 59Co-NMR studies

    Science.gov (United States)

    Manago, Masahiro; Ishida, Kenji; Aoki, Dai

    2018-02-01

    73Ge and 59Co nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) measurements have been performed on a 73Ge-enriched single-crystalline sample of the ferromagnetic superconductor UCoGe in the paramagnetic state. The 73Ge NQR parameters deduced from NQR and NMR are close to those of another isostructural ferromagnetic superconductor URhGe. The Knight shifts of the Ge and Co sites are well scaled to each other when the magnetic field is parallel to the b or c axis. The hyperfine coupling constants of Ge are estimated to be close to those of Co. The large difference of spin susceptibilities between the a and b axes could lead to the different response of the superconductivity and ferromagnetism with the field parallel to these directions. The temperature dependence of the nuclear spin-lattice relaxation rates 1 /T1 at the two sites is similar to each other above 5 K. These results indicate that the itinerant U-5 f electrons are responsible for the ferromagnetism in this compound, consistent with previous studies. The similarities and differences in the three ferromagnetic superconductors are discussed.

  19. Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

    International Nuclear Information System (INIS)

    Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

    2011-01-01

    Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

  20. Luminescence of one dimensional ZnO, GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanostructure through thermal evaporation of Zn and Ge powder mixture

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Vuong-Hung, E-mail: vuong.phamhung@hust.edu.vn; Kien, Vu Trung; Tam, Phuong Dinh; Huy, Pham Thanh

    2016-07-15

    Graphical abstract: - Highlights: • ZnO and GeO{sub 2}–ZnGeO{sub 4} nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture. • Morphology of specimens were observed to have a nanowire structure to rod-like morphology. • Strong NBE emission band with suppressed visible green emission band were observed on the dominant ZnO nanowires. • Strong emission of ∼530 nm were observed on the GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires. - Abstract: This paper reports the first attempt for fabrication of thermal evaporated Zn–Ge powder mixture to achieve near-band-edge (NBE) emission of ZnO and visible emission of GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires with controllable intensities. The nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture, particularly, by using different Zn:Ge ratio, temperature and evaporated times. The morphology of nanowires was depended on the Zn and Ge ratio that was observed to have a nanowire structure to rod-like morphology. The thermal evaporation of Zn:Ge powder mixture resulted in formation of dominant ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires as a function of evaporated parameters. These results suggest that the application of thermal evaporation of Zn and Ge mixture for potential application in synthesis of ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires for optoelectronic field.

  1. Sn-based Ge/Ge{sub 0.975}Sn{sub 0.025}/Ge p-i-n photodetector operated with back-side illumination

    Energy Technology Data Exchange (ETDEWEB)

    Chang, C.; Li, H.; Huang, S. H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Sun, G.; Soref, R. A. [Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)

    2016-04-11

    We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with the use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.

  2. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

    International Nuclear Information System (INIS)

    Zhang, Rui; Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi

    2013-01-01

    The ultrathin GeO x /Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al 2 O 3 /Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO x layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of ∼0.3 nm with an increase in the GeO x thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of ∼0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO x /Ge interfaces on Ge (100) and (111) surfaces.

  3. Organo-Zintl-based superatoms: [Ge9(CHO)3] and [Ge9(CHO)

    Science.gov (United States)

    Reddy, G. Naaresh; Jena, Puru; Giri, Santanab

    2017-10-01

    A systematic study, based on density functional theory and different hybrid functionals for exchange-correlation potential, shows that the electron affinities of organo-zintl clusters [Ge9(R)n] [R = CHO; n = 1, 3] are close to that of chlorine (3.6 eV) and iodine (3.0 eV). A detailed study of the molecular orbitals of these complexes, when compared to those of Al13-, Cl- and I-, confirm that they behave as superatoms, mimicking the chemistry of halogens. This study expands the scope of superatoms by including a new class of pseudo-halogens based on ligated organo-Zintl ions.

  4. Increasing the thermoelectric power factor of Ge17Sb2Te20 by adjusting the Ge/Sb ratio

    Science.gov (United States)

    Williams, Jared B.; Mather, Spencer P.; Page, Alexander; Uher, Ctirad; Morelli, Donald T.

    2017-07-01

    We have investigated the thermoelectric properties of Ge17Sb2Te20. This compound is a known phase change material with electronic properties that depend strongly on temperature. The thermoelectric properties of this compound can be tuned by altering the stoichiometry of Ge and Sb without the use of additional foreign elements during synthesis. This tuning results in a 26% increase in the thermoelectric power factor at 723 K. Based on a single parabolic band model we show that the pristine material is optimally doped, and thus, a reduction in the lattice thermal conductivity of pure Ge17Sb2Te20 should result in an enhanced thermoelectric figure of merit.

  5. Electrical circuit model of ITO/AZO/Ge photodetector

    Directory of Open Access Journals (Sweden)

    Malkeshkumar Patel

    2017-10-01

    Full Text Available In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007 (Yun et al., 2016 [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015 [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.

  6. The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

    Science.gov (United States)

    Gamalski, A D; Tersoff, J; Kodambaka, S; Zakharov, D N; Ross, F M; Stach, E A

    2015-12-09

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. These results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, ⟨111⟩-oriented nanowires.

  7. Physics with polarized beams above GeV region

    International Nuclear Information System (INIS)

    Yokosawa, A.

    1980-01-01

    During the past several years many exciting and unexpected results have been observed in experiments with polarized beams. Those results are reviewed briefly. A new polarized beam line up to 600 GeV/c is also discussed. 4 figures

  8. Preparing for 1000 GeV physics at Fermilab

    International Nuclear Information System (INIS)

    Anon.

    1980-01-01

    The superconducting proton beams and the neutrino beams at Fermilab prepared for the research with 1000 GeV colliding proton and antiproton beams are described. Especially a new developed helium transfer line is described. (HSI).

  9. Fabrication of prototypes of Ge(li) semiconductor detector

    International Nuclear Information System (INIS)

    Santos, W.M.S.; Marti, G.V.; Rizzo, P.; Barros, S. de.

    1987-01-01

    The fabrication process of Ge(Li) semiconductor detector prototypes, from specific chemical treatments of doped monocrystal with receptor impurities (p + semicondutor) is presented. The detector characteristics, such as resulotion and operation tension are shown. (M.C.K.) [pt

  10. Cross-correlation analysis of Ge/Li/ spectra

    International Nuclear Information System (INIS)

    MacDonald, R.; Robertson, A.; Kennett, T.J.; Prestwich, W.V.

    1974-01-01

    A sensitive technique is proposed for activation analysis using cross-correlation and improved spectral orthogonality achieved through use of a rectangular zero area digital filter. To test the accuracy and reliability of the cross-correlation procedure five spectra obtained with a Ge/Li detector were combined in different proportions. Gaussian distributed statistics were then added to the composite spectra by means of a pseudo-random number generator. The basis spectra used were 76 As, 82 Br, 72 Ga, 77 Ge, and room background. In general, when the basis spectra were combined in roughly comparable proportions the accuracy of the techique proved to be excelent (>1%). However, of primary importance was the ability of the correlation technique to identify low intensity components in the presence of high intensity components. It was found that the detection threshold for Ge, for example, was not reached until the Ge content in the unfiltered spectrum was <0.16%. (T.G.)

  11. arXiv Charged Fermions Below 100 GeV

    CERN Document Server

    Egana-Ugrinovic, Daniel; Ruderman, Joshua T.

    2018-05-03

    How light can a fermion be if it has unit electric charge? We revisit the lore that LEP robustly excludes charged fermions lighter than about 100 GeV. We review LEP chargino searches, and find them to exclude charged fermions lighter than 90 GeV, assuming a higgsino-like cross section. However, if the charged fermion couples to a new scalar, destructive interference among production channels can lower the LEP cross section by a factor of 3. In this case, we find that charged fermions as light as 75 GeV can evade LEP bounds, while remaining consistent with constraints from the LHC. As the LHC collects more data, charged fermions in the 75–100 GeV mass range serve as a target for future monojet and disappearing track searches.

  12. Growth strategies to control tapering in Ge nanowires

    Directory of Open Access Journals (Sweden)

    P. Periwal

    2014-04-01

    Full Text Available We report the effect of PH3 on the morphology of Au catalyzed Ge nanowires (NWs. Ge NWs were grown on Si (111 substrate at 400 °C in the presence of PH3, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH3/GeH4 ratio causes passivation at NW surface. At high PH3 concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH3 flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH3-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  13. Annealing-induced Ge/Si(100) island evolution

    International Nuclear Information System (INIS)

    Zhang Yangting; Drucker, Jeff

    2003-01-01

    Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

  14. Ge Quantum Dot Infrared Imaging Camera, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  15. The excess enthalpies of liquid Ge-Pb-Te alloys

    International Nuclear Information System (INIS)

    Blachnik, R.; Binder, J.; Schlieper, A.

    1997-01-01

    The excess enthalpies of liquid alloys in the ternary system Ge-Pb-Te were determined at 1210 K in a heat flow calorimeter for five sections Ge y Pb 1-y -Te with y = 0.2, 0.4, 0.5, 0.6 and 0.8 and at 1153 K for Ge 0.5 Pb 0.5 -Te. The enthalpy surface in the ternary system is determined by a valley of exothermic minima, stretching from an exothermic minimum at the composition GeTe to one at the composition PbTe in the respective binaries. The excess enthalpies in the limiting metallic binary were adapted with the Redlich-Kister formalism. For the description of the thermodynamic functions in the ternary system the equation of Bonnier was taken using ternary coefficients. The calculated curves are in good agreement with the experimental data. (orig.)

  16. Electronic and magnetic properties of Si substituted Fe3Ge

    International Nuclear Information System (INIS)

    Shanavas, K. V.; McGuire, Michael A.; Parker, David S.

    2015-01-01

    Using first principles calculations, we studied the effect of Si substitution in the hexagonal Fe 3 Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the magnitude of in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. Substituting Ge with the smaller Si ions also increases the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications such as permanent magnets. Our experimental measurements on samples of Fe 3 Ge 1−x Si x confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial

  17. Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

    Science.gov (United States)

    Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

    2017-11-01

    A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

  18. Electron density distribution in Si and Ge using multipole, maximum ...

    Indian Academy of Sciences (India)

    Si and Ge has been studied using multipole, maximum entropy method (MEM) and ... and electron density distribution using the currently available versatile ..... data should be subjected to maximum possible utility for the characterization of.

  19. A frontier in fast computing

    CERN Document Server

    von der Schmitt, Hans; The ATLAS collaboration

    2012-01-01

    The primary mission of particle physics is fundamental science. Big apparatus is required however to do such science: accelerators, detectors, and computing. Also the methodology used forms a trinity: experiment, theory, and simulation. This talk has a focus on computing and simulation. The worldwide Grid computing allows us to analyze all data within days after they are recorded at the experiment and to get to physics results quickly, as in the case of the recently discovered Higgs-like boson at 126 GeV mass. Developments in simulation, computing, accelerators and detectors all provided valuable technical results to society, e.g. the WWW, hadron therapy and medical imaging. The technology aspect and the fundamental science aspect of particle physics, and of other fields of physics, are both important for the role of science in the third millenium.

  20. Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O3 layer

    International Nuclear Information System (INIS)

    Paleari, S.; Molle, A.; Accetta, F.; Lamperti, A.; Cianci, E.; Fanciulli, M.

    2014-01-01

    The electrical activity of Ge dangling bonds is investigated at the interface between GeO 2 -passivated Ge(1 1 1) substrate and Al 2 O 3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al 2 O 3 /GeO 2 /Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices ( 10 cm −2 ). In particular, it is shown that capping the GeO 2 -passivated Ge(1 1 1) with Al 2 O 3 has no impact on the microstructure of the Ge dangling bond.

  1. Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO{sub 2} interface after capping with Al{sub 2}O{sub 3} layer

    Energy Technology Data Exchange (ETDEWEB)

    Paleari, S., E-mail: s.paleari6@campus.unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Molle, A. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Accetta, F. [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Lamperti, A.; Cianci, E. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Fanciulli, M., E-mail: marco.fanciulli@unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy)

    2014-02-01

    The electrical activity of Ge dangling bonds is investigated at the interface between GeO{sub 2}-passivated Ge(1 1 1) substrate and Al{sub 2}O{sub 3} grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al{sub 2}O{sub 3}/GeO{sub 2}/Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices (<10{sup 10} cm{sup −2}). In particular, it is shown that capping the GeO{sub 2}-passivated Ge(1 1 1) with Al{sub 2}O{sub 3} has no impact on the microstructure of the Ge dangling bond.

  2. On the DAMA and CoGeNT Modulations

    DEFF Research Database (Denmark)

    Frandsen, Mads Toudal; Kahlhoefer, Felix; March-Russell, John

    2011-01-01

    DAMA observes an annual modulation in their event rate, as might be expected from dark matter scatterings, while CoGeNT has reported evidence for a similar modulation. The simplest interpretation of these findings in terms of dark matter-nucleus scatterings is excluded by other direct detection...... constraints, while inelasticity enhances the annual modulation fraction of the signal, bringing the CoGeNT and CDMS results into better agreement....

  3. Elastic scattering crossovers from 50 to 175 GeV

    International Nuclear Information System (INIS)

    Anderson, R.L.; Ayres, D.S.; Barton, D.S.; Brenner, A.E.; Butler, J.; Cutts, D.; DeMarzo, C.; Diebold, R.; Elias, J.E.; Fines, J.; Friedman, J.I.; Gittelman, B.; Gottschalk, B.; Guerriero, L.; Gustavson, D.; Kendall, H.W.; Lanou, R.E.; Lavopa, P.; Levinson, L.J.; Litt, J.; Loh, E.; Maclay, G.J.; Maggi, G.; Massimo, J.T.; Meunier, R.; Mikenberg, G.; Nelson, B.; Posa, F.; Rich, K.; Ritson, D.M.; Rosenson, L.; Selvaggi, G.; Sogard, M.; Spinelli, P.; Verdier, R.; Waldner, F.; Weitsch, G.A.

    1976-01-01

    A comparison of K/sup plus-or-minus/p and p/sup plus-or-minus/p elastic scattering is made for incident energy 50 to 175 GeV. Average values of 0.19 +- 0.04 and 0.11 +- 0.02 GeV 2 were found for the invariant-momentum-transfer values of the Kp and pp crossover points, respectively

  4. Halbwachs no Collège de France

    Directory of Open Access Journals (Sweden)

    Laurent Mucchielli

    2001-01-01

    Full Text Available Este artigo apresenta documento escrito por Maurice Halbwachs, em seus cadernos de memória. Seu principal tema é a eleição de Halbwachs para o Collège de France.This article presents the document writen by Maurice Halbwachs, in his memory-books. Its main subject is the Halbwachs election for the Collège de France.

  5. Nb3Ge superconductive films grown with nitrogen

    International Nuclear Information System (INIS)

    Sigsbee, R.A.

    1978-01-01

    A superconductive film of Nb 3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10 -5 mm Hg, introducing nitrogen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb 3 Ge on the heated substrate

  6. Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

    Science.gov (United States)

    Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

    2010-03-01

    It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

  7. Steering of sub-GeV electrons by ultrashort Si and Ge bent crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sytov, A.I. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; Belarusian State Univ., Minsk (Belarus). Inst. for Nuclear Problems; INFN Sezione di Ferrara (Italy); Bandiera, L.; Mazzolari, A.; Bagli, E.; Germogli, G.; Guidi, V.; Romagnoni, M. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; INFN Sezione di Ferrara (Italy); De Salvador, D.; Carturan, S.; Maggioni, G. [INFN, Laboratori Nazionali di Legnaro (Italy); Padova Univ. (Italy). Dipt. di Fisica; Berra, A.; Prest, M. [Univ. dell' Insubria, Como (Italy); INFN, Sezione di Milano Bicocca, Milan (Italy); Durighello, C. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; INFN, Laboratori Nazionali di Legnaro (Italy); Padova Univ. (Italy). Dipt. di Fisica; INFN Sezione di Ferrara (Italy); Klag, P.; Lauth, W. [Mainz Univ. (Germany). Inst. fuer Kernphysik; Tikhomirov, V.V. [Belarusian State Univ., Minsk (Belarus). Inst. for Nuclear Problems; Vallazza, E. [INFN, Sezione di Trieste (Italy)

    2017-12-15

    We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 μm of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals. (orig.)

  8. Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals

    Science.gov (United States)

    Sytov, A. I.; Bandiera, L.; De Salvador, D.; Mazzolari, A.; Bagli, E.; Berra, A.; Carturan, S.; Durighello, C.; Germogli, G.; Guidi, V.; Klag, P.; Lauth, W.; Maggioni, G.; Prest, M.; Romagnoni, M.; Tikhomirov, V. V.; Vallazza, E.

    2017-12-01

    We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 μ m of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals.

  9. LArGe. A liquid argon scintillation veto for GERDA

    International Nuclear Information System (INIS)

    Heisel, Mark

    2011-01-01

    LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for possible applications in the GERDA experiment. GERDA searches for the neutrinoless double-beta decay in 76 Ge, by operating naked germanium detectors submersed into 65 m 3 of liquid argon. Similarly, LArGe runs Ge-detectors in 1 m 3 (1.4 tons) of liquid argon, which in addition is instrumented with photomultipliers to detect argon scintillation light. The light is used in anti-coincidence with the germanium detectors, to effectively suppress background events that deposit energy in the liquid argon. This work adresses the design, construction, and commissioning of LArGe. The background suppression efficiency has been studied in combination with a pulse shape discrimination (PSD) technique for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times 10 3 have been achieved. First background data of LArGe (without PSD) yield a background index of (0.12-4.6).10 -2 cts/(keV.kg.y) (90% c.l.), which is at the level of the Gerda phase I design goal. Furthermore, for the first time we measure the natural 42 Ar abundance (in parallel to Gerda), and have indication for the 2νββ-decay in natural germanium. (orig.)

  10. The 50 GeV program at SLAC

    International Nuclear Information System (INIS)

    Prescott, C.Y.

    1994-03-01

    SLAC has undertaken a modes programs to upgrade the beam energy for fixed target experiments to 50 GeV. This upgrade is possible due to the previous extensive development work on the linac accelerating gradient for the SLC, which has been operational for over five years. The SLC can deliver a beam of energy up to 60 GeV using a pulse compression technique in the rf system which trades pulse length for a higher pulse amplitude. This mode of operation has been reliable and routine for the SLC. However the beam line transport which takes electrons or positrons from the end of the linac to the target in End Station A has not been upgraded from the original design energy of 25 GeV. The 50 GeV upgrade for the fixed target experiments consists in modifying and increasing the number of beam line dipole magnets to reach 50 GeV, plus modernization of the beam line instrumentation and controls. The plans for spin structure experiments using electron beams at energies up to 50 GeV are described

  11. Growth and evolution of nickel germanide nanostructures on Ge(001).

    Science.gov (United States)

    Grzela, T; Capellini, G; Koczorowski, W; Schubert, M A; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J; Schroeder, T

    2015-09-25

    Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer-Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous NixGey wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the NixGey terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular NixGey 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110).

  12. LArGe. A liquid argon scintillation veto for GERDA

    Energy Technology Data Exchange (ETDEWEB)

    Heisel, Mark

    2011-04-13

    LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for possible applications in the GERDA experiment. GERDA searches for the neutrinoless double-beta decay in {sup 76}Ge, by operating naked germanium detectors submersed into 65 m{sup 3} of liquid argon. Similarly, LArGe runs Ge-detectors in 1 m{sup 3} (1.4 tons) of liquid argon, which in addition is instrumented with photomultipliers to detect argon scintillation light. The light is used in anti-coincidence with the germanium detectors, to effectively suppress background events that deposit energy in the liquid argon. This work adresses the design, construction, and commissioning of LArGe. The background suppression efficiency has been studied in combination with a pulse shape discrimination (PSD) technique for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times 10{sup 3} have been achieved. First background data of LArGe (without PSD) yield a background index of (0.12-4.6).10{sup -2} cts/(keV.kg.y) (90% c.l.), which is at the level of the Gerda phase I design goal. Furthermore, for the first time we measure the natural {sup 42}Ar abundance (in parallel to Gerda), and have indication for the 2{nu}{beta}{beta}-decay in natural germanium. (orig.)

  13. Measurement of energy transitions for the decay radiations of 75Ge and 69Ge in a high purity germanium detector

    Science.gov (United States)

    Aydın, Güral; Usta, Metin; Oktay, Adem

    2018-06-01

    Photoactivation experiments have a wide range of application areas in nuclear, particle physics, and medical physics such as measuring energy levels and half-lifes of nuclei, experiments for understanding imaging methods in medicine, isotope production for patient treatment, radiation security and transportation, radiation therapy, and astrophysics processes. In this study, some energy transition values of the decay radiations of 75Ge and 69Ge, which are the products of photonuclear reactions (γ, n) with germanium isotopes (75Ge and 69Ge), were measured. The gamma spectrum as a result of atomic transitions were analysed by using a high purity semiconductor germanium detector and the energy transition values which are presented here were compared with the ones which are the best in literature. It was observed that the results presented are in agreement with literature in error range and some results have better precisions.

  14. Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

    2011-07-01

    The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

  15. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  16. Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

    International Nuclear Information System (INIS)

    Nie Tianxiao; Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin; Chen Zhigang; Zou Jin

    2011-01-01

    A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

  17. Missing mass spectra in pp inelastic scattering at total energies of 23 GeV and 31 GeV

    CERN Document Server

    Albrow, M G; Barber, D P; Bogaerts, A; Bosnjakovic, B; Brooks, J R; Clegg, A B; Erné, F C; Gee, C N P; Locke, D H; Loebinger, F K; Murphy, P G; Rudge, A; Sens, Johannes C; Van der Veen, F

    1974-01-01

    Results are reported of measurements of the momentum spectra of protons emitted at small angles in inelastic reactions at the CERN ISR. The data are for total energies s/sup 1///sub 2/ of 23 GeV and 31 GeV. The structure of the peak at low values of the missing mass M (of the system recoiling against the observed proton) is studied. The missing mass distributions have the form (M/sup 2/)-/sup B(t)/ where t is the four-momentum transfer squared. B(t) drops from 0.98+or-0.06 at t=-0.15 GeV/sup 2/ to 0.20+or-0.15 at t=-1.65 GeV/sup 2/. The results are compared with a simple triple-Regge formula. (12 refs).

  18. Coarsening of Ni-Ge solid-solution precipitates in 'inverse' Ni{sub 3}Ge alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ardell, Alan J., E-mail: alan.ardell@gmail.com [National Science Foundation, 4201 Wilson Boulevard, Arlington, VA 22230 (United States); Ma Yong [Aquatic Sensor Network Technology LLC, Storrs, CT 06268 (United States)

    2012-07-30

    Highlights: Black-Right-Pointing-Pointer We report microstructural evolution of disordered Ni-Ge precipitates in Ni{sub 3}Ge alloys. Black-Right-Pointing-Pointer Coarsening kinetics and particle size distributions are presented. Black-Right-Pointing-Pointer Data are analyzed quantitatively using the MSLW theory, but agreement is only fair. Black-Right-Pointing-Pointer The shapes of large precipitates are unusual, with discus or boomerang cross-sections. Black-Right-Pointing-Pointer Results are compared with morphology, kinetics of Ni-Al in inverse Ni{sub 3}Al alloys. - Abstract: The morphological evolution and coarsening kinetics of Ni-Ge solid solution precipitates from supersaturated solutions of hypostoichiometric Ni{sub 3}Ge were investigated in alloys containing from 22.48 to 23.50 at.% Ge at 600, 650 and 700 Degree-Sign C. The particles evolve from spheres to cuboids, though the flat portions of the interfaces are small. At larger sizes the precipitates coalesce into discus shapes, and are sometimes boomerang-shaped in cross section after intersection. The rate constant for coarsening increases strongly with equilibrium volume fraction, much more so than predicted by current theories; this is very different from the coarsening behavior of Ni{sub 3}Ge precipitates in normal Ni-Ge alloys and of Ni-Al precipitates in inverse Ni{sub 3}Al alloys. The activation energy for coarsening, 275.86 {+-} 24.17 kJ/mol, is somewhat larger than the result from conventional diffusion experiments, though within the limits of experimental error. Quantitative agreement between theory and experiment, estimated using available data on tracer diffusion coefficients in Ni{sub 3}Ge, is fair, the calculated rate constants exceeding measured ones by a factor of about 15. The particle size distributions are not in very good agreement with the predictions of any theory. These results are discussed in the context of recent theories and observations.

  19. Coarsening of Ni–Ge solid-solution precipitates in “inverse” Ni3Ge alloys

    International Nuclear Information System (INIS)

    Ardell, Alan J.; Ma Yong

    2012-01-01

    Highlights: ► We report microstructural evolution of disordered Ni–Ge precipitates in Ni 3 Ge alloys. ► Coarsening kinetics and particle size distributions are presented. ► Data are analyzed quantitatively using the MSLW theory, but agreement is only fair. ► The shapes of large precipitates are unusual, with discus or boomerang cross-sections. ► Results are compared with morphology, kinetics of Ni–Al in inverse Ni 3 Al alloys. - Abstract: The morphological evolution and coarsening kinetics of Ni–Ge solid solution precipitates from supersaturated solutions of hypostoichiometric Ni 3 Ge were investigated in alloys containing from 22.48 to 23.50 at.% Ge at 600, 650 and 700 °C. The particles evolve from spheres to cuboids, though the flat portions of the interfaces are small. At larger sizes the precipitates coalesce into discus shapes, and are sometimes boomerang-shaped in cross section after intersection. The rate constant for coarsening increases strongly with equilibrium volume fraction, much more so than predicted by current theories; this is very different from the coarsening behavior of Ni 3 Ge precipitates in normal Ni–Ge alloys and of Ni–Al precipitates in inverse Ni 3 Al alloys. The activation energy for coarsening, 275.86 ± 24.17 kJ/mol, is somewhat larger than the result from conventional diffusion experiments, though within the limits of experimental error. Quantitative agreement between theory and experiment, estimated using available data on tracer diffusion coefficients in Ni 3 Ge, is fair, the calculated rate constants exceeding measured ones by a factor of about 15. The particle size distributions are not in very good agreement with the predictions of any theory. These results are discussed in the context of recent theories and observations.

  20. Silicon and Ge in the deep sea deduced from Si isotope and Ge measurements in giant glass sponges

    Science.gov (United States)

    Jochum, K. P.; Schuessler, J. A.; Haug, G. H.; Andreae, M. O.; Froelich, P. N.

    2016-12-01

    Biogenic silica, such as giant glass spicules of the deep-sea sponge Monorhaphis chuni, is an archive to monitor paleo-Si and -Ge in past seawater. Here we report on Si isotopes and Ge/Si ratios in up to 2.7 m long spicules using LA-(MC)-ICP-MS. Isotope ratios of Si are suitable proxies for Si concentrations in seawater, because Si isotope fractionation into biogenic silica is a function of seawater dissolved Si concentration. The δ30Si values for our specimens range from about - 0.5 ‰ to - 3.6 ‰ and are much lower than modern (>1000 m) seawater δ30Si of about 1.3 ‰. Interestingly, there is a systematic Si isotopic and Ge variation from the rim to the center of the cross sections, which we interpret as seawater paleo-Si and -Ge changes. The lifetime of the giant sponges appears to be between about 6 and 14 ka. These age estimates were obtained by comparing our analytical data with various paleo-markers of the glacial-interglacial termination. Thus, the entire Holocene and the end of the last glacial period are contained in the oldest giant spicules. The derived Si and Ge seawater concentrations are ca. 12 % higher and 20 % lower, respectively, during the late glacial than at present. Possible explanations for changing Si, Ge and Ge/Si during the deglaciation could be changes in riverine, glacial, and/or eolian deliveries of silica to the oceans and changes in marine sedimentary reverse weathering, which removes Ge into marine sediments during opal dissolution and diagenesis.

  1. Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

    International Nuclear Information System (INIS)

    Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

    2012-01-01

    SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

  2. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael [Physical and Theoretical Chemistry, University of Saarland, 66123 Saarbrücken (Germany)

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  3. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

    Science.gov (United States)

    2015-10-09

    and conclusions The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8...Abstract The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8, SnD4. The...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si -compatible materials and devices in the Si - Ge -Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final

  4. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    OpenAIRE

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  5. Ge nanoclusters in PECVD-deposited glass caused only by heat treatment

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

    2008-01-01

    This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N2 atmosphere. We studied the annealed samples...... embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth...

  6. Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

    International Nuclear Information System (INIS)

    Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

    2006-01-01

    This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%

  7. Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

    Science.gov (United States)

    Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong; von Känel, Hans; Schroeder, Thomas

    2016-03-04

    The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.

  8. The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

    International Nuclear Information System (INIS)

    Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

    2013-01-01

    The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

  9. Influence of the entrance channel in the fusion reaction 318 MeV 74Ge+74Ge

    International Nuclear Information System (INIS)

    Zhu, L.H.; Cinausero, M.; Angelis, G. de; De Poli, M.; Fioretto, E.; Gadea, A.; Napoli, D.R.; Prete, G.; Lucarelli, F.

    1998-01-01

    Entrance channel effects in the fusion of heavy ions have been studied by using the 74 Ge+ 74 Ge reaction at 318 MeV. The population of the yrast superdeformed band in 144 Gd shows an increase when compared with the results obtained in the more asymmetric 48 Ti+ 100 Mo reaction at 215 MeV. The relative yields of the different evaporation residues produced in the 74 Ge+ 74 Ge and in the 48 Ti+ 100 Mo reactions are very similar, with the exception of the 145,144 Gd residual nuclei (3n and 4n decay channels) which are populated with a larger yield in the symmetric reaction. Statistical model calculations reproduce qualitatively such effect if a fission delay is explicitly taken into account. Effects related to fusion barrier fluctuations seem to be important in determining the spin distributions of the compound nucleus. The spectra of the high energy γ-rays emitted in the 74 Ge+ 74 Ge reaction have been measured as a function of the γ-ray multiplicity as well as in coincidence with selected evaporation residues. They are reproduced by standard statistical model calculations with GDR parameters taken from systematics, demonstrating that, in agreement with dynamical model prediction, the emission of γ-rays from the dinucleus formed in the earlier stage of the collision is unimportant. (orig.)

  10. Optical Computing

    OpenAIRE

    Woods, Damien; Naughton, Thomas J.

    2008-01-01

    We consider optical computers that encode data using images and compute by transforming such images. We give an overview of a number of such optical computing architectures, including descriptions of the type of hardware commonly used in optical computing, as well as some of the computational efficiencies of optical devices. We go on to discuss optical computing from the point of view of computational complexity theory, with the aim of putting some old, and some very recent, re...

  11. Propagation of GeV neutrinos through Earth

    Science.gov (United States)

    Olivas, Yaithd Daniel; Sahu, Sarira

    2018-06-01

    We have studied the Earth matter effect on the oscillation of upward going GeV neutrinos by taking into account the three active neutrino flavors. For neutrino energy in the range 3 to 12 GeV we observed three distinct resonant peaks for the oscillation process νe ↔νμ,τ in three distinct densities. However, according to the most realistic density profile of the Earth, the second peak at neutrino energy 6.18 GeV corresponding to the density 6.6 g/cm3 does not exist. So the resonance at this energy can not be of MSW-type. For the calculation of observed flux of these GeV neutrinos on Earth, we considered two different flux ratios at the source, the standard scenario with the flux ratio 1 : 2 : 0 and the muon damped scenario with 0 : 1 : 0. It is observed that at the detector while the standard scenario gives the observed flux ratio 1 : 1 : 1, the muon damped scenario has a different ratio. For muon damped case with Eν 20 GeV, we get the average Φνe ∼ 0 and Φνμ ≃Φντ ≃ 0.45. The upcoming PINGU will be able to shed more light on the nature of the resonance in these GeV neutrinos and hopefully will also be able to discriminate among different processes of neutrino production at the source in GeV energy range.

  12. Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al2O3 gate dielectrics

    Science.gov (United States)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

    2016-06-01

    Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal-oxide-semiconductor field-effect-transistors (MOSFETs) with GeO x /Al2O3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8-20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al2O3 gate stacks are evaluated experimentally. The bulk charges in Al2O3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  1012 cm-2 at the GeO x /Ge interface and  -2.3  ×  1012 cm-2 at the Al2O3/GeO x interface. The electric dipole at the Al2O3/GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  1013 cm-2. The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al2O3/GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al2O3/GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement.

  13. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    International Nuclear Information System (INIS)

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  14. High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

    Science.gov (United States)

    Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

    2017-07-01

    The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

  15. Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing

    Energy Technology Data Exchange (ETDEWEB)

    Itoh, Yuhki, E-mail: itoh.yuhki@ecei.tohoku.ac.jp; Hatakeyama, Shinji; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-03-01

    Effects of carbon (C) atoms on solid-phase epitaxial growth of Ge on Si(100) have been studied. C and Ge layers were deposited on Si(100) substrates at low temperature (150–300 °C) by using solid-source molecular beam epitaxy (MBE) system and subsequently annealed at 650 °C in the MBE chamber. The surface morphology after annealing changed depending on deposited amounts of C and deposition temperature of Ge. Ge dots were formed for small amounts of C while smooth Ge films were formed by large amounts of C varying with the Ge deposition temperature. The surface morphology after annealing was also affected by the as-deposited Ge crystallinity. The change in surface morphology depending on the amounts of deposited C was considered to be affected by the formation of Ge–C bonds which relieved the misfit strain between Ge and Si. The crystallinity of Ge deteriorated with increasing C coverage due to the incorporation of insoluble C atoms in the shape of both dots and films. - Highlights: • Effects of carbon on solid-phase epitaxy of C/Ge/Si(100) were studied. • Surface morphology changed depending on C amounts and Ge deposition temperature. • Solid-phase growth of Ge changed from large dots to smooth films with C coverage. • Transition of surface morphology was affected by the formation of Ge–C bonds.

  16. Effects of Ge-132 and GeO2 on seed germination and seedling growth of Oenothera biennis L. under NaCl stress.

    Science.gov (United States)

    Liu, Yan; Hou, Long-Yu; Li, Qing-Mei; Jiang, Ze-Ping; Gao, Wei-Dong; Zhu, Yan; Zhang, Hai-Bo

    2017-01-01

    To investigate the effects of β-carboxyethyl germanium sequioxide (Ge-132) and germanium dioxide (GeO 2 ) on improving salt tolerance of evening primrose (Oenothera biennis L.), seed germination, seedling growth, antioxidase and malondialdehyde (MDA) were observed under treatments of various concentrations (0, 5, 10, 20, 30 μM) of Ge in normal condition and in 50 mM NaCl solution. The results showed that both Ge-132 and GeO 2 treatments significantly increased seed germination percentage and shoot length in dose-dependent concentrations but inhibited early root elongation growth. 5-30 μM Ge-132 and 10, 20 μM GeO 2 treatments could significantly mitigate even eliminate harmful influence of salt, representing increased percentage of seed germination, root length, ratio between length of root and shoot, and decreased shoot length. These treatments also significantly decreased peroxidase (POD) and catalase (CAT) activities and MDA content. The mechanism is likely that Ge scavenges reactive oxygen species - especially hydrogen peroxide (H 2 O 2 ) - by its electron configuration 4S 2 4P 2 so as to reduce lipid peroxidation. This is the first report about the comparison of bioactivity effect of Ge-132 and GeO 2 on seed germination and seedling growth under salt stress. We conclude that Ge-132 is better than GeO 2 on promoting salt tolerance of seed and seedling.

  17. Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

    Science.gov (United States)

    Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

    2018-06-01

    The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

  18. Poly-SiGe for MEMS-above-CMOS sensors

    CERN Document Server

    Gonzalez Ruiz, Pilar; Witvrouw, Ann

    2014-01-01

    Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

  19. ISABELLE: a 200 + 200 GeV colliding beam facility

    International Nuclear Information System (INIS)

    Courant, E.D.

    1977-01-01

    Plans are under way for the construction of a pair of intersecting storage rings providing for colliding beams of protons of energy at least 200 GeV. The rings (circumference 2.62 km) will contain superconducting magnets constructed with braided Nb--Ti filamentary wire, with a peak field of 4.0 T corresponding to an energy of 200 GeV. A current of 10 A of protons will be injected at 29 GeV from the existing AGS accelerator at Brookhaven, using the energy stacking technique similar to that employed at the CERN ISR; subsequently the stored beam will be accelerated gradually in the storage rings. Six intersection areas will be provided for experiments. They are designed to provide flexibility in beam characteristics for different experiments. The maximum luminosity at full energy is expected to be 1.0 x 10 33 cm -2 s -1 , at 29 GeV it will be approximately 10 32 cm -2 s -1 . Recent work with prototype magnets indicates that fields of 5.0 T can be produced. This has led to an alternative design of somewhat larger rings (circumference 3.77 km) that should be capable of providing colliding beams at 400 + 400 GeV

  20. Structural study of Ge/GaAs thin films

    International Nuclear Information System (INIS)

    Lazarov, V K; Lari, L; Lytvyn, P M; Kholevchuk, V V; Mitin, V F

    2012-01-01

    Ge/GaAs heterostructure research is largely motivated by the application of this material in solar cells, metal-oxide-semiconductor field-effect transistors, mm-wave mixer diodes, temperature sensors and photodetectors. Therefore, understanding of how the properties of Ge/GaAs heterostructure depend on its preparation (growth) is of importance for various high-efficiency devices. In this work, by using thermal Ge evaporation on GaAs(100), we studied structural properties of these films as a function of the deposition rate. Film grains size and morphology show strong dependence of the deposition rate. Low deposition rates results in films with large crystal grains and rough surface. At high deposition rates films become flatter and their crystal grains size decreases, while at very high deposition rates films become amorphous. Cross-sectional TEM of the films show that the Ge films are granular single crystal epitaxially grown on GaAs. The Ge/GaAs interface is atomically abrupt and free from misfit dislocations. Stacking faults along the [111] directions that originate at the interface were also observed. Finally by using the Kelvin probe microscopy we show that work function changes are related to the grain structure of the film.

  1. Computer group

    International Nuclear Information System (INIS)

    Bauer, H.; Black, I.; Heusler, A.; Hoeptner, G.; Krafft, F.; Lang, R.; Moellenkamp, R.; Mueller, W.; Mueller, W.F.; Schati, C.; Schmidt, A.; Schwind, D.; Weber, G.

    1983-01-01

    The computer groups has been reorganized to take charge for the general purpose computers DEC10 and VAX and the computer network (Dataswitch, DECnet, IBM - connections to GSI and IPP, preparation for Datex-P). (orig.)

  2. Computer Engineers.

    Science.gov (United States)

    Moncarz, Roger

    2000-01-01

    Looks at computer engineers and describes their job, employment outlook, earnings, and training and qualifications. Provides a list of resources related to computer engineering careers and the computer industry. (JOW)

  3. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

    2013-12-21

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  4. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    International Nuclear Information System (INIS)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-01-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective

  5. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Science.gov (United States)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-12-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  6. Nuclear interactions for 15 GeV/c protons and pions under random and channeling conditions in germanium single crystals

    CERN Document Server

    Andersen, S K; Fich, O.; Golovchenko, J.A.; Nielsen, Henry; Schiott, H.E.; Uggerhoj, E.; Vraast-Thomsen, C.; Charpak, Georges; Petersen, G.; Sauli, F.; Ponpon, J.P.; Siffert, P.

    1978-01-01

    Strong directional effects for nuclear-reaction probabilities have been observed when 15 GeV/ c protons and pions are incident on a 4.2 mm Ge single crystal. In the random situation, our measurements are in agreement with Glauber's theory of diffraction scattering and with published particle-production data. When protons are incident in an aligned direction, the nuclear-reaction probabilities fall off very drastically but in a way which is in agreement with standard channeling theory; for aligned negative pions where a simple channeling theory is lacking, there is some experimental indication that nuclear-reaction probabilities are enhanced compared to the corresponding random rates, an indication which is supported by detailed computer-simulation studies.

  7. Computer Music

    Science.gov (United States)

    Cook, Perry R.

    This chapter covers algorithms, technologies, computer languages, and systems for computer music. Computer music involves the application of computers and other digital/electronic technologies to music composition, performance, theory, history, and the study of perception. The field combines digital signal processing, computational algorithms, computer languages, hardware and software systems, acoustics, psychoacoustics (low-level perception of sounds from the raw acoustic signal), and music cognition (higher-level perception of musical style, form, emotion, etc.).

  8. Solid state synthesis of Mn{sub 5}Ge{sub 3} in Ge/Ag/Mn trilayers: Structural and magnetic studies

    Energy Technology Data Exchange (ETDEWEB)

    Myagkov, V.G.; Bykova, L.E.; Matsynin, A.A.; Volochaev, M.N.; Zhigalov, V.S.; Tambasov, I.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Mikhlin, Yu L. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation); Velikanov, D.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Bondarenko, G.N. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation)

    2017-02-15

    The thin-film solid-state reaction between elemental Ge and Mn across chemically inert Ag layers with thicknesses of (0, 0.3, 1 and 2.2 µm) in Ge/Ag/Mn trilayers was studied for the first time. The initial samples were annealed at temperatures between 50 and 500 °C at 50 °C intervals for 1 h. The initiation temperature of the reaction for Ge/Mn (without a Ag barrier layer) was ~ 120 °C and increased slightly up to ~ 250 °C when the Ag barrier layer thickness increased up to 2.2 µm. In spite of the Ag layer, only the ferromagnetic Mn{sub 5}Ge{sub 3} compound and the Nowotny phase were observed in the initial stage of the reaction after annealing at 500 °C. The cross-sectional studies show that during Mn{sub 5}Ge{sub 3} formation the Ge is the sole diffusing species. The magnetic and cross-sectional transmission electron microscopy (TEM) studies show an almost complete transfer of Ge atoms from the Ge film, via a 2.2 µm Ag barrier layer, into the Mn layer. We attribute the driving force of the long-range transfer to the long-range chemical interactions between reacting Mn and Ge atoms. - Graphical abstract: The direct visualization of the solid state reaction between Mn and Ge across a Ag buffer layer at 500 °C. - Highlights: • The migration of Ge, via an inert 2.2 µm Ag barrier, into a Mn layer. • The first Mn{sub 5}Ge{sub 3} phase was observed in reactions with different Ag layers. • The Ge is the sole diffusing species during Mn{sub 5}Ge{sub 3} formation • The long-range chemical interactions control the Ge atomic transfer.

  9. CT vs 68Ge attenuation correction in a combined PET/CT system: evaluation of the effect of lowering the CT tube current

    International Nuclear Information System (INIS)

    Kamel, Ehab; Hany, Thomas F.; Burger, Cyrill; Treyer, Valerie; Schulthess von, Gustav K.; Buck, Alfred; Lonn, Albert H.R.

    2002-01-01

    With the introduction of combined positron emission tomography/computed tomography (PET/CT) systems, several questions have to be answered. In this work we addressed two of these questions: (a) to what value can the CT tube current be reduced while still yielding adequate maps for the attenuation correction of PET emission scans and (b) how do quantified uptake values in tumours derived from CT and germanium-68 attenuation correction compare. In 26 tumour patients, multidetector CT scans were acquired with 10, 40, 80 and 120 mA (CT 10 , CT 40 , CT 80 and CT 120 ) and used for the attenuation correction of a single FDG PET emission scan, yielding four PET scans designated PET CT10 -PET CT120 . In 60 tumorous lesions, FDG uptake and lesion size were quantified on PET CT10 -PET CT120 . In another group of 18 patients, one CT scan acquired with 80 mA and a standard transmission scan acquired using 68 Ge sources were employed for the attenuation correction of the FDG emission scan (PET CT80 , PET 68Ge ). Uptake values and lesion size in 26 lesions were compared on PET CT80 and PET 68Ge . In the first group of patients, analysis of variance revealed no significant effect of CT current on tumour FDG uptake or lesion size. In the second group, tumour FDG uptake was slightly higher using CT compared with 68 Ge attenuation correction, especially in lesions with high FDG uptake. Lesion size was similar on PET CT80 and PET 68Ge . In conclusion, low CT currents yield adequate maps for the attenuation correction of PET emission scans. Although the discrepancy between CT- and 68 Ge-derived uptake values is probably not relevant in most cases, it should be kept in mind if standardised uptake values derived from CT and 68 Ge attenuation correction are compared. (orig.)

  10. Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

    Science.gov (United States)

    Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

    2016-02-01

    Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

  11. Two Higgs bosons near 125 GeV in the NMSSM: beyond the narrow width approximation

    Energy Technology Data Exchange (ETDEWEB)

    Das, Biswaranjan; Poulose, Poulose [IIT Guwahati, Department of Physics, Guwahati, Assam (India); Moretti, Stefano [University of Southampton, School of Physics and Astronomy, Southampton (United Kingdom); Munir, Shoaib [Korea Institute for Advanced Study, School of Physics, Seoul (Korea, Republic of)

    2017-08-15

    In the next-to-minimal supersymmetric (NMS) Standard Model (SM), it is possible for either one of the additional singlet-like scalar and pseudoscalar Higgs bosons to be almost degenerate in mass with the ∝125 GeV SM-like Higgs state. In the real NMSSM (rNMSSM), when the mass difference between two scalar states is comparable to their individual total decay widths, the quantum mechanical interference, due to the relevant diagonal as well as off-diagonal terms in the propagator matrix, between them can become sizeable. This possibility invalidates usage of the narrow width approximation (NWA) to compute the cross section for the production of a di-photon pair with a given invariant mass via resonant Higgs boson(s) in the gluon fusion process at the Large Hadron Collider (LHC). When, motivated by the baryon asymmetry of the universe, CP-violating (CPV) phases are explicitly invoked in the Higgs sector of the NMSSM, all the interaction eigenstates mix to give five CP-indefinite physical Higgs bosons. In this scenario, the interference effects due to the off-diagonal terms in the Higgs mass matrix that mix the pseudoscalar-like state with the SM-like one can also become significant, when these two are sufficiently mass-degenerate. We perform a detailed analysis, in both the real and complex NMSSM, of these interference effects, when the full propagator matrix is taken into account, in the production of a photon pair with an invariant mass near 125 GeV through gluon fusion. We find that these effects can account for up to ∝40% of the total cross section for certain model parameter configurations. We also investigate how such mutually interfering states contributing to the ∝125 GeV signal observed at the LHC can be distinguished from a single resonance. (orig.)

  12. Development of 68Ge/68Ga Generator using 30 MeV Cyclotron

    International Nuclear Information System (INIS)

    Goo, Hur Min; Dae, Yang Seung; Hoon, Park Jeong; Dae, Park Yong; Je, Lee Eun; Bae, Kong Young; Kim, In Jong; Lee, Jin Woo; Hyun, Yu Kook

    2012-05-01

    The purpose of this research is to develop the 68 Ge/ 68 Ga generator where daughter nuclide 68 Ga can be eluted according to the designated periods from the resin which holds mother nuclide 68 Ge absorbed and to develop the 68 Ga utilization technology. 1. Target development for 68 Ge target and production of 68 Ge - Target designed for 68 Ge production with 30 MeV cyclotron - Target body material evaluation and proton beam irradiation 2. Separation of 68 Ge and development of column material and extraction system for 68 Ge/ 68 Ga separation - Development of 68 Ge separation method from nat Ga target - Development of absorbents for generator using stable isotope 3. Development of 68 Ga labelled radiopharmaceutical - Development of 68 Ga labelled benzamide derivative for diagnosis of melanoma - Development of 68 Ga dendrimer complex using nano-technology 4. Development of shield case for 68 Ge/ 68 Ga generator

  13. Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure

    International Nuclear Information System (INIS)

    Chen, Wen-Hua; Liu, Chang-Hai; Li, Qin-Liang; Sun, Qi-Jun; Liu, Jie; Gao, Xu; Sun, Xuhui; Wang, Sui-Dong

    2014-01-01

    Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide. (paper)

  14. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  15. Optical properties of individual site-controlled Ge quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Grydlik, Martyna, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany); Brehm, Moritz, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Tayagaki, Takeshi [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Langer, Gregor; Schäffler, Friedrich [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany)

    2015-06-22

    We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

  16. Electronic Structure of GdCuGe Intermetallic Compound

    Science.gov (United States)

    Lukoyanov, A. V.; Knyazev, Yu. V.; Kuz'min, Yu. I.

    2018-04-01

    The electronic structure of GdCuGe intermetallic compound has been studied. Spin-polarized energy spectrum calculations have been performed by the band method with allowance for strong electron correlations in the 4 f-shell of gadolinium ions. Antiferromagnetic ordering of GdCuGe at low temperatures has been obtained in a theoretical calculation, with the value of the effective magnetic moment of gadolinium ions reproduced in fair agreement with experimental data. The electronic density of states has been analyzed. An optical conductivity spectrum has been calculated for GdCuGe; it reveals specific features that are analogous to the ones discovered previously in the GdCuSi compound with a similar hexagonal structure.

  17. Flat Ge-doped optical fibres for food irradiation dosimetry

    International Nuclear Information System (INIS)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-01-01

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%

  18. A distributed charge storage with GeO2 nanodots

    International Nuclear Information System (INIS)

    Chang, T.C.; Yan, S.T.; Hsu, C.H.; Tang, M.T.; Lee, J.F.; Tai, Y.H.; Liu, P.T.; Sze, S.M.

    2004-01-01

    In this study, a distributed charge storage with GeO 2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO 2 are estimated to be about 5.5 nm and 4.3x10 11 cm -2 , respectively. The composition of the dots is also confirmed to be GeO 2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO 2 nanodots

  19. The 12 GeV Upgrade at Jefferson Lab

    International Nuclear Information System (INIS)

    Rolf Ent

    2002-01-01

    There has been a remarkable fruitful evolution of our picture of the behavior of strongly interacting matter during the almost two decades that have passed since the parameters of the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab were defined. These advances have revealed important new experimental questions best addressed by a CEBAF-class machine at higher energy. Fortunately, favorable technical developments coupled with foresight in the design of the facility make it feasible to triple (double) CEBAF's design (achieved) beam energy from 4 (6) GeV to 12 GeV, in a cost-effective manner: the Upgrade can be realized for about 15% of the cost of the initial facility. This Upgrade would enable the worldwide community to greatly expand its physics horizons. In addition to in general improving the figure of merit and momentum transfer range of the present Jefferson Lab physics program, raising the energy of the accelerator to 12 GeV opens up two main new areas of physics: (1) It allows direct exploration of the quark-gluon structure of hadrons and nuclei in the ''valence quark region''. It is known that inclusive electron scattering at the high momentum and energy transfers available at 12 GeV is governed by elementary interactions with quarks and, indirectly, gluons. The original CEBAF energy is not adequate to study this critical region, while with continuous 12 GeV beams one can cleanly access the entire ''valence quark region'' and exploit the newly discovered Generalized Parton Distributions. In addition, a 12-GeV Jefferson Lab can essentially complete the studies of the transition from hadronic to quark-gluon degrees of freedom. (2) It allows crossing the threshold above which the origins of quark confinement can be investigated. Specifically, 12 GeV will enable the production of certain ''exotic'' mesons. Whereas in the QCD region of asymptotic freedom ample evidence for the role of gluons exist through the observation of gluon jets

  20. Flat Ge-doped optical fibres for food irradiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Noor, N. Mohd; Jusoh, M. A. [Department of Imaging, Faculty of Medicine and Health Sciences, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Razis, A. F. Abdull [Food Safety Research Centre, Faculty of Food Science and Technology, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Laboratory of UPM-MAKNA Cancer Research, Institute of Bioscience, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Alawiah, A. [Faculty of Engineering and Technology, Multimedia University, 75450 Malacca (Malaysia); Bradley, D. A. [Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  1. Surface tension and density of Si-Ge melts

    Science.gov (United States)

    Ricci, Enrica; Amore, Stefano; Giuranno, Donatella; Novakovic, Rada; Tuissi, Ausonio; Sobczak, Natalia; Nowak, Rafal; Korpala, Bartłomiej; Bruzda, Grzegorz

    2014-06-01

    In this work, the surface tension and density of Si-Ge liquid alloys were determined by the pendant drop method. Over the range of measurements, both properties show a linear temperature dependence and a nonlinear concentration dependence. Indeed, the density decreases with increasing silicon content exhibiting positive deviation from ideality, while the surface tension increases and deviates negatively with respect to the ideal solution model. Taking into account the Si-Ge phase diagram, a simple lens type, the surface tension behavior of the Si-Ge liquid alloys was analyzed in the framework of the Quasi-Chemical Approximation for the Regular Solutions model. The new experimental results were compared with a few data available in the literature, obtained by the containerless method.

  2. Strain controlled switching effects in phosphorene and GeS.

    Science.gov (United States)

    Li, B W; Wang, Y; Xie, Y Q; Zhu, L; Yao, K L

    2017-10-27

    By performing first principles calculations within the combined approach of density functional theory and nonequilibrium Green's function technique, we have designed some nanoelectronic devices to explore the ferroelastic switching of phosphorene and phosphorene analogs GeS. With the structure swapping along the zigzag direction and armchair direction, band gap transformed at different states due to their anisotropic phosphorene-like structure. From the initial state to the middle state, the band gap becomes progressively smaller, after that, it becomes wide. By analyzing transmission coefficients, it is found that the transport properties of phosphorene and GeS can be controlled by a uniaxial strain. The results also manifest that GeS has great potential to fabricate ferroic nonvolatile memory devices, because its relatively high on/off transmission coefficient ratio (∼1000) between the two stable ferroelastic states.

  3. CEBAF SRF Performance during Initial 12 GeV Commissioning

    International Nuclear Information System (INIS)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a Q L of 3x10 7 . Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  4. The CERN 400 GeV proton synchrotron (CERN SPS)

    International Nuclear Information System (INIS)

    Adams, J.B.

    1977-01-01

    The main characteristics of the CERN 400 GeV proton synchrotron (SPS) has described. Beam intensity averages about 5x10 12 protons per pulse. The CERN 28 GeV proton synchrotron serves as an injector for the SPS. There are 108 magnet periods in the machine with a phase shift per period of π/2. The magnet system consists of 800 dipoles with 1.8 T magnetic field and 216 quadrupoles with a field gradient of 20.7 T (per meter). The frequency chosen for the RF system of the SPS is 200 MHz. Two beam extraction systems are installed in the SPS, one to feed protons to the West Experimental Area, and the other to feed protons to the North Experimental Area. The planned development of the machine in the next few years has described. The cost per GeV of the SPS works out 3 to 4 times less than that of the CPS

  5. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  6. Characterising the 750 GeV diphoton excess

    International Nuclear Information System (INIS)

    Bernon, Jérémy; Goudelis, Andreas; Kraml, Sabine; Mawatari, Kentarou; Sengupta, Dipan

    2016-01-01

    We study kinematic distributions that may help characterise the recently observed excess in diphoton events at 750 GeV at the LHC Run 2. Several scenarios are considered, including spin-0 and spin-2 750 GeV resonances that decay directly into photon pairs as well as heavier parent resonances that undergo three-body or cascade decays. We find that combinations of the distributions of the diphoton system and the leading photon can distinguish the topology and mass spectra of the different scenarios, while patterns of QCD radiation can help differentiate the production mechanisms. Moreover, missing energy is a powerful discriminator for the heavy parent scenarios if they involve (effectively) invisible particles. While our study concentrates on the current excess at 750 GeV, the analysis is general and can also be useful for characterising other potential diphoton signals in the future.

  7. Kinetics of plasma oxidation of germanium-tin (GeSn)

    Science.gov (United States)

    Wang, Wei; Lei, Dian; Dong, Yuan; Zhang, Zheng; Pan, Jisheng; Gong, Xiao; Tok, Eng-Soon; Yeo, Yee-Chia

    2017-12-01

    The kinetics of plasma oxidation of GeSn at low temperature is investigated. The oxidation process is described by a power-law model where the oxidation rate decreases rapidly from the initial oxidation rate with increasing time. The oxidation rate of GeSn is higher than that of pure Ge, which can be explained by the higher chemical reaction rate at the GeSn-oxide/GeSn interface. In addition, the Sn atoms at the interface region exchange positions with the underlying Ge atoms during oxidation, leading to a SnO2-rich oxide near the interface. The bandgap of GeSn oxide is extracted to be 5.1 ± 0.2 eV by XPS, and the valence band offset at the GeSn-oxide/GeSn heterojunction is found to be 3.7 ± 0.2 eV. Controlled annealing experiments demonstrate that the GeSn oxide is stable with respect to annealing temperatures up to 400 °C. However, after annealing at 450 °C, the GeO2 is converted to GeO, and desorbs from the GeSn-oxide/GeSn, leaving behind Sn oxide.

  8. Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

    OpenAIRE

    Yudi Darma

    2008-01-01

    Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of ...

  9. Framework 'interstitial' oxygen in La10(GeO4)5-(GeO5)O2 apatite electrolyte

    International Nuclear Information System (INIS)

    Pramana, S.S.; White, T.J.

    2007-01-01

    Oxygen conduction at low temperatures in apatites make these materials potentially useful as electrolytes in solid-oxide fuel cells, but our understanding of the defect structures enabling ion migration is incomplete. While conduction along [001] channels is dominant, considerable inter-tunnel mobility has been recognized. Using neutron powder diffraction of stoichiometric 'La 10 (GeO 4 ) 6 O 3 ', it has been shown that this compound is more correctly described as an La 10 (GeO 4 ) 5- (GeO 5 )O 2 apatite, in which high concentrations of interstitial oxygen reside within the channel walls. It is suggested that these framework interstitial O atoms provide a reservoir of ions that can migrate into the conducting channels of apatite, via a mechanism of inter-tunnel oxygen diffusion that transiently converts GeO 4 tetrahedra to GeO 5 distorted trigonal bipyramids. This structural modification is consistent with known crystal chemistry and may occur generally in oxide apatites. (orig.)

  10. Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

    International Nuclear Information System (INIS)

    Kao, Kuo-Hsing; De Meyer, Kristin; Verhulst, Anne S.; Van de Put, Maarten; Soree, Bart; Magnus, Wim; Vandenberghe, William G.

    2014-01-01

    Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10 6 for V DD  = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge

  11. Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Kuo-Hsing; De Meyer, Kristin [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, Katholieke Universiteit Leuven, 3000 Leuven (Belgium); Verhulst, Anne S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Van de Put, Maarten; Soree, Bart; Magnus, Wim [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Physics, Universiteit Antwerpen, 2000 Antwerpen (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2014-01-28

    Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10{sup 6} for V{sub DD} = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge.

  12. Ion Beam Synthesis of Ge Nanowires. rev. ed.

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, T.

    2001-01-01

    The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1 x 10{sup 17} Ge{sup +}cm{sup -2} at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N{sub 2} atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter. (orig.)

  13. Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

    International Nuclear Information System (INIS)

    Yan Wensheng; Li Zhongrui; Sun Zhihu; Wei Shiqiang; Kolobov, A. V.

    2007-01-01

    The formation mechanism of Ge nanocrystals for Ge (60 mol%) embedded in a SiO2 matrix grown on Si(001) and quartz-glass substrates was studied by fluorescence x-ray absorption fine structure (XAFS). It was found that the formation of Ge nanocrystals strongly depends on the properties of the substrate materials. In the as-prepared samples, Ge atoms exist in amorphous Ge and GeO2 phases. At the annealing temperature of 1073 K, on the quartz-glass substrate, Ge nanocrystals are only formed predominantly from the amorphous Ge phase in the as-prepared sample. However, on the Si(100) substrate the Ge nanocrystals are generated partly from amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis revealed that about 10% of GeO2 in as-prepared sample permutated with Si in the wafer and formed Ge nanocrystals

  14. Reconstruction of GeV Neutrino Events in LENA

    International Nuclear Information System (INIS)

    Moellenberg, R.; Feilitzsch, F. von; Goeger-Neff, M.; Hellgartner, D.; Lewke, T.; Meindl, Q.; Oberauer, L.; Potzel, W.; Tippmann, M.; Winter, J.; Wurm, M.; Peltoniemi, J.

    2011-01-01

    LENA (Low Energy Neutrino Astronomy) is a proposed next generation liquid-scintillator detector with about 50 kt target mass. Besides the detection of solar neutrinos, geoneutrinos, supernova neutrinos and the search for the proton decay, LENA could also be used as the far detector of a next generation neutrino beam. The present contribution outlines the status of the Monte Carlo studies towards the reconstruction of GeV neutrinos in LENA. Both the tracking capabilities at a few hundred MeV, most interesting for a beta beam, and above 1 GeV for a superbeam experiment are presented.

  15. Superconductivity in ThPd2Ge2

    Science.gov (United States)

    Domieracki, Krzysztof; Wiśniewski, Piotr; Wochowski, Konrad; Romanova, Tetiana; Hackemer, Alicja; Gorzelniak, Roman; Pikul, Adam; Kaczorowski, Dariusz

    2018-05-01

    Our on-going search for unconventional superconductors among the ThTE2Ge2 phases (TE is a d-electron transition metal) revealed that ThPd2Ge2, which crystallizes with a body-centered tetragonal ThCr2Si2-type structure, exhibits superconductivity at low temperatures. In this paper, we report on the electrical transport and thermodynamic properties of a polycrystalline sample of this new superconductor, extended down to 50 mK. The experimental data indicates weakly-coupled type-II superconductivity with Tc = 0.63(2) K and μ0Hc2(0) = 32(2) mT.

  16. Description of the ternary system Cu-Ge-Te

    International Nuclear Information System (INIS)

    Dogguy, M.; Carcaly, C.; Rivet, J.; Flahaut, J.

    1977-01-01

    The Cu-Ge-Te ternary system has been studied by DTA and by crystallographic and metallographic analysis. The existence of a ternary compound Cu 2 GeTe 3 is demonstrated; this compound has a ternary incongruent melting point at 500 0 C. This ternary compound has a superstructure of a zinc blende type. The study shows the existence of five ternary eutectics. Two liquid-liquid miscibility gaps exist: the first is situated entirely in the ternary system; the second gives a monotectic region within the ternary system. (Auth.)

  17. Magnetoelastic behaviour of Gd sub 5 Ge sub 4

    CERN Document Server

    Magen, C; Algarabel, P A; Marquina, C; Ibarra, M R

    2003-01-01

    A complete investigation of the complex magnetic behaviour of Gd sub 5 Ge sub 4 by means of linear thermal expansion and magnetostriction measurements (5-300 K, 0-120 kOe) has been carried out. Our results support the suggested existence in this system of a coupled crystallographic-magnetic transition from a Gd sub 5 Ge sub 4 -type Pnma (antiferromagnetic) to a Gd sub 5 Si sub 4 -type Pnma (ferromagnetic) state. Strong magnetoelastic effects are observed at the field-induced first-order magnetic-martensitic transformation. A revised magnetic and crystallographic H- T phase diagram is proposed.

  18. Shaping Ge islands on Si(001) surfaces with misorientation angle.

    Science.gov (United States)

    Persichetti, L; Sgarlata, A; Fanfoni, M; Balzarotti, A

    2010-01-22

    A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0 degrees -8 degrees is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microscopy investigation we are able to explain the competition between step-flow growth and 2D nucleation and the progressive elongation of the 3D islands along the miscut direction [110]. Using finite element calculations, we find a strict correlation between the morphological evolution and the energetic factors which govern the {105} faceting at atomic scale.

  19. Summary of the 70 GeV Booster Group

    International Nuclear Information System (INIS)

    Makdisi, Y.; Khiari, F.

    1985-06-01

    The energy range of the 70 GeV SSC booster makes it difficult to employ a single technique for preserving the beam polarization. Results of DEPOL calculations show that the expected resonance strengths are below the .5 x 10 -1 level, which poses no problem for resonance jumping. It was found that a single adiabatically energized Siberian snake will not significantly depolarize the beam. Thus one good solution to the mixing problem is that the snake magnets be energized during the acceleration cycle reaching maximum operating value at 20 GeV, where they take over the resonance jumping role. The possibility of adiabatically energizing two snakes was found to be feasible

  20. Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

    Science.gov (United States)

    Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

    2018-04-01

    Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

  1. Optical response of Cu3Ge thin films

    OpenAIRE

    Aboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.

    1996-01-01

    We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the ...

  2. Formation of Si/Ge/Si heterostructures with quantum dots

    International Nuclear Information System (INIS)

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  3. Substrate Effects in Wideband SiGe HBT Mixer Circuits

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2005-01-01

    are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.......In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...

  4. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  5. Heavy Ion Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  6. GaAs/Ge solar panels for the SAMPEX program

    Science.gov (United States)

    Dobson, Rodney; Kukulka, Jerry; Dakermanji, George; Roufberg, Lew; Ahmad, Anisa; Lyons, John

    1992-01-01

    GaAs based solar cells have been developed for spacecraft use for several years. However, acceptance and application of these cells for spacecraft missions has been slow because of their high cost and concerns about their integration onto solar panels. Spectrolab has now completed fabrication of solar panels with GaAs/Ge solar cells for a second space program. This paper will focus on the design, fabrication and test of GaAs/Ge solar panels for the Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX) Program.

  7. Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: structure and optical properties

    Science.gov (United States)

    Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2017-07-01

    Ge(x)[SiO2](1-x) (0.1  ⩽  x  ⩽  0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Ge x [SiO2](1-x) films with x  ⩾  0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeO x clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

  8. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  9. Density functional study of the decomposition pathways of SiH₃ and GeH₃ at the Si(100) and Ge(100) surfaces.

    Science.gov (United States)

    Ceriotti, M; Montalenti, F; Bernasconi, M

    2012-03-14

    By means of first-principles calculations we studied the decomposition pathways of SiH₃ on Ge(100) and of GeH₃ on Si(100), of interest for the growth of crystalline SiGe alloys and Si/Ge heterostructures by plasma-enhanced chemical vapor deposition. We also investigated H desorption via reaction of two adsorbed SiH₂/GeH₂ species (β₂ reaction) or via Eley-Rideal abstraction of surface H atoms from the impinging SiH₃ and GeH₃ species. The calculated activation energies for the different processes suggest that the rate-limiting step for the growth of Si/Ge systems is still the β₂ reaction of two SiH₂ as in the growth of crystalline Si.

  10. Growth of crystallized Ge films from VHF inductively-coupled plasma of H2-diluted GeH4

    International Nuclear Information System (INIS)

    Sakata, T.; Makihara, K.; Murakami, H.; Higashi, S.; Miyazaki, S.

    2007-01-01

    We have studied the Ge crystalline nucleation and film growth on quartz substrate at 250 deg. C from inductively-coupled plasma (ICP) of GeH 4 diluted with H 2 . The ICP was generated by supplying 60 MHz power to an external single-turn antenna which was placed on a quartz plate window of a stainless steel reactor and parallel to the substrate. We have found that the growth rate is significantly increased when the preferential growth of the (110) plane becomes pronounced after the formation of randomly-oriented crystalline network. The (110) oriented Ge films, of which average crystallinity is as high as 70%. The integrated intensity ratio of TO phonons in crystalline phase to those in disordered phase, were grown at a rate of ∼ 4.0 nm/s after the formation of amorphous incubation layer with a thickness of ∼ 0.1 μm on quartz

  11. Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

    KAUST Repository

    Liu, E. K.

    2013-03-28

    An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases. In the window, a first-order magnetostructural transition between paramagnetic austenite and ferromagnetic martensite occurs with a sharp jump in magnetization, showing a magnetic entropy change as large as −40 J kg−1 K−1 in a 50 kOe field change. This giant magnetocaloric effect enables Mn1− x Co x NiGe to become a potential magnetic refrigerant.

  12. Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S. [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K' s Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

    2016-07-18

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

  13. Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices

    International Nuclear Information System (INIS)

    Tominaga, Junji; Kolobov, Alexander V; Fons, Paul J; Wang, Xiaomin; Saito, Yuta; Nakano, Takashi; Hase, Muneaki; Murakami, Shuichi; Herfort, Jens; Takagaki, Yukihiko

    2015-01-01

    Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe) 2 (Sb 2 Te 3 ) l ] m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory. (focus issue paper)

  14. Stellar Laboratories: New GeV and Ge VI Oscillator Strengths and their Validation in the Hot White Dwarf RE0503-289

    Science.gov (United States)

    Rauch, T.; Werner, K.; Biemont, E.; Quinet, P.; Kruk, J. W.

    2013-01-01

    State-of-the-art spectral analysis of hot stars by means of non-LTE model-atmosphere techniques has arrived at a high level of sophistication. The analysis of high-resolution and high-S/N spectra, however, is strongly restricted by the lack of reliable atomic data for highly ionized species from intermediate-mass metals to trans-iron elements. Especially data for the latter has only been sparsely calculated. Many of their lines are identified in spectra of extremely hot, hydrogen-deficient post-AGB stars. A reliable determination of their abundances establishes crucial constraints for AGB nucleosynthesis simulations and, thus, for stellar evolutionary theory. Aims. In a previous analysis of the UV spectrum of RE 0503-289, spectral lines of highly ionized Ga, Ge, As, Se, Kr, Mo, Sn, Te, I, and Xe were identified. Individual abundance determinations are hampered by the lack of reliable oscillator strengths. Most of these identified lines stem from Ge V. In addition, we identified Ge VI lines for the first time. We calculated Ge V and Ge VI oscillator strengths in order to reproduce the observed spectrum. Methods. We newly calculated Ge V and Ge VI oscillator strengths to consider their radiative and collisional bound-bound transitions in detail in our non-LTE stellar-atmosphere models for the analysis of the Ge IV-VI spectrum exhibited in high-resolution and high-S/N FUV (FUSE) and UV (ORFEUS/BEFS, IUE) observations of RE 0503-289. Results. In the UV spectrum of RE 0503-289, we identify four Ge IV, 37 Ge V, and seven Ge VI lines. Most of these lines are identified for the first time in any star. We can reproduce almost all Ge IV, GeV, and Ge VI lines in the observed spectrum of RE 0503-289 (T(sub eff) = 70 kK, log g = 7.5) at log Ge = -3.8 +/- 0.3 (mass fraction, about 650 times solar). The Ge IV/V/VI ionization equilibrium, that is a very sensitive T(sub eff) indicator, is reproduced well. Conclusions. Reliable measurements and calculations of atomic data are a

  15. Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

    Energy Technology Data Exchange (ETDEWEB)

    Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

    2014-10-15

    We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.

  16. Analog computing

    CERN Document Server

    Ulmann, Bernd

    2013-01-01

    This book is a comprehensive introduction to analog computing. As most textbooks about this powerful computing paradigm date back to the 1960s and 1970s, it fills a void and forges a bridge from the early days of analog computing to future applications. The idea of analog computing is not new. In fact, this computing paradigm is nearly forgotten, although it offers a path to both high-speed and low-power computing, which are in even more demand now than they were back in the heyday of electronic analog computers.

  17. Computational composites

    DEFF Research Database (Denmark)

    Vallgårda, Anna K. A.; Redström, Johan

    2007-01-01

    Computational composite is introduced as a new type of composite material. Arguing that this is not just a metaphorical maneuver, we provide an analysis of computational technology as material in design, which shows how computers share important characteristics with other materials used in design...... and architecture. We argue that the notion of computational composites provides a precise understanding of the computer as material, and of how computations need to be combined with other materials to come to expression as material. Besides working as an analysis of computers from a designer’s point of view......, the notion of computational composites may also provide a link for computer science and human-computer interaction to an increasingly rapid development and use of new materials in design and architecture....

  18. High spin levels in 66Ga, 68Ga, 70Ga and 68Ge, 70Ge, 72Ge via fusion evaporation reactions induced by α-particles

    International Nuclear Information System (INIS)

    Morand, C.

    1979-01-01

    The high spin (J 70 Ga all the members (except the 3 - one) of the (πpsub(3/2), νgsub(9/2)) configuration have been identified, in addition with the (πfsub(5/2), νgsub(9/2))sub(7 - ) and (πgsub(9/2), νgsub(9/2))sub(9 + ) states. In 66 Ga and 68 Ga most of the levels with J>7 ca be described as a result of maximum coupling of a gsub(9/2) neutron with the odd Ga core. Thus the (πgsub(9/2), νgsub(9/2))sub(9 + ) states have been safely located. In the same way the even Ge, the backbending effect at the Jsup(π)=8 + state is less and less pronouced from the 68 Ge to the 72 Ge; that can be explained by the (νgsub(9/2)) 2 sub(8 + ) configuration of this state, so that the 8 + →6 + γ-transition is more and more allowed with increasing N, i.e. as the νgsub(9/2) shell acts more and more in the lower yrast levels Jsup(π)=0 + , 2 + , 4 + , 6 + configurations [fr

  19. Pressure-induced antiferromagnetic superconductivity in CeNiGe3: A Ge73-NQR study under pressure

    International Nuclear Information System (INIS)

    Harada, A.; Kawasaki, S.; Mukuda, H.; Kitaoka, Y.; Thamizhavel, A.; Okuda, Y.; Settai, R.; Onuki, Y.; Itoh, K.M.; Haller, E.E.; Harima, H.

    2007-01-01

    We report on antiferromagnetic (AF) properties of pressure-induced superconductivity in CeNiGe 3 via the Ge73 nuclear-quadrupole-resonance (NQR) measurements under pressure (P). The NQR-spectrum measurements have revealed that the incommensurate antiferromagnetic ordering is robust against increasing P with the increase of ordered moment and ordering temperature. Nevertheless the measurements of nuclear spin-lattice relaxation rate (1/T 1 ) have pointed to the onset of superconductivity as a consequence of Ce-4f electrons delocalized by applying P. The emergence of superconductivity under the development of AF order suggests that a novel type of superconducting mechanism works in this compound

  20. Quantum Computing

    OpenAIRE

    Scarani, Valerio

    1998-01-01

    The aim of this thesis was to explain what quantum computing is. The information for the thesis was gathered from books, scientific publications, and news articles. The analysis of the information revealed that quantum computing can be broken down to three areas: theories behind quantum computing explaining the structure of a quantum computer, known quantum algorithms, and the actual physical realizations of a quantum computer. The thesis reveals that moving from classical memor...

  1. The Ho–Ni–Ge system: Isothermal section and new rare-earth nickel germanides

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Faculty of Geology, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada); Pani, M.; Provino, A.; Manfrinetti, P. [Institute SPIN-CNR and Dipartimento di Chimica e Chimica Industriale, Università di Genova, Via Dodecaneso 31, 16146 Genova (Italy)

    2015-05-15

    The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2}CuGe{sub 6}-type), HoNiGe{sub 3} (SmNiGe{sub 3}-type), HoNi{sub 0.2÷0.6}Ge{sub 2} (CeNiSi{sub 2}-type), Ho{sub 37÷34}Ni{sub 6÷24}Ge{sub 57÷42} (AlB{sub 2}-type), HoNiGe (TiNiSi-type), Ho{sub 3}NiGe{sub 2} (La{sub 3}NiGe{sub 2}-type), the ternary system contains four new compounds: Ho{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type), HoNi{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Ho{sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) and ~Ho{sub 5}Ni{sub 2}Ge{sub 3} (unknown structure). Quasi-binary solid solutions were observed at 1070 K for Ho{sub 2}Ni{sub 17}, HoNi{sub 5}, HoNi{sub 7}, HoNi{sub 3}, HoNi{sub 2}, HoNi and Ho{sub 2}Ge{sub 3}, but no detectable solubility was found for the other binary compounds in the Ho–Ni–Ge system. Based on the magnetization measurements, the HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2} and Ho{sub 3}Ni{sub 11}Ge{sub 4} (and isostructural (Tb, Dy){sub 3}Ni{sub 11}Ge{sub 4}) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho{sub 3}Ni{sub 2}Ge{sub 3} exhibits an antiferromagnetic transition at ~7 K. Additionally, the crystal structure of the new isostructural phases (Y, Yb)Ni{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Er{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type) and (Y, Tb, Dy, Er, Tm){sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) has been also investigated. - Graphical abstract: The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at.% Ho by X-ray and microprobe analyses. Besides the eight known compounds, i.e. HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2

  2. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  3. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

    Science.gov (United States)

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Terziotti, Daniela; Bonera, Emiliano; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Spinella, Corrado; Nicotra, Giuseppe

    2012-02-03

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe.

  4. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy

    International Nuclear Information System (INIS)

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Terziotti, Daniela; Bonera, Emiliano; Spinella, Corrado; Nicotra, Giuseppe

    2012-01-01

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe. (paper)

  5. Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

    Science.gov (United States)

    Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

    2018-06-01

    Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.

  6. Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction

    Science.gov (United States)

    Wang, Hongjuan; Han, Genquan; Jiang, Xiangwei; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

    2017-04-01

    In this work, the boosting effect on the performance of GeSn n-channel fin tunneling FET (nFinTFET) enabled by uniaxial tensile stress is investigated theoretically. As the fin rotates within the (001) plane, the uniaxial tensile stress is always along its direction. The electrical characteristics of tensile-stressed GeSn nFinTFETs with point and line tunneling modes are computed utilizing the technology computer aided design (TCAD) simulator in which the dynamic nonlocal band-to-band tunneling (BTBT) algorithm is employed. In comparison with the relaxed devices, tensile-stressed GeSn nFinTFETs achieve a substantial enhancement in band-to-band tunneling generation rate (G BTBT) and on-state current I ON owing to the reduced bandgap E G induced by the tensile stress. Performance improvement of GeSn nFinTFETs induced by tensile stress demonstrates a strong dependence on channel direction and tunneling modes. Under the same magnitude of stress, line-nFinTFETs obtain a more pronounced I ON enhancement over the transistors with point tunneling mode.

  7. XML Schema of PaGE-OM: fuge.xsd [

    Lifescience Database Archive (English)

    Full Text Available ://www.omg.org/spec/PAGE-OM/20090722/snp schemaLocation=snp.xsd/> ..._source type=fuge:Ontology_source/> _source> ...ogy_term/> _term> Ontology term, defined in more detail in FuGE (http://fuge.sourceforge.net/). This

  8. GeV Detection of HESS J0632+057

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jian; Torres, Diego F.; Wilhelmi, Emma de Oña [Institute of Space Sciences (CSIC–IEEC), Campus UAB, Carrer de Magrans s/n, E-08193 Barcelona (Spain); Cheng, K.-S. [Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong (China); Kretschmar, Peter [European Space Astronomy Centre (ESA/ESAC), Science Operations Department, Villanueva de la Cañada (Madrid) (Spain); Hou, Xian [Yunnan Observatories, Chinese Academy of Sciences, 396 Yangfangwang, Guandu District, Kunming 650216 (China); Takata, Jumpei, E-mail: jian@ice.csic.es [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2017-09-10

    HESS J0632+057 is the only gamma-ray binary that has been detected at TeV energies, but not at GeV energies yet. Based on nearly nine years of Fermi Large Area Telescope (LAT) Pass 8 data, we report here on a deep search for the gamma-ray emission from HESS J0632+057 in the 0.1–300 GeV energy range. We find a previously unknown gamma-ray source, Fermi J0632.6+0548, spatially coincident with HESS J0632+057. The measured flux of Fermi J0632.6+0548 is consistent with the previous flux upper limit on HESS J0632+057 and shows variability that can be related to the HESS J0632+057 orbital phase. We propose that Fermi J0632.6+0548 is the GeV counterpart of HESS J0632+057. Considering the Very High Energy spectrum of HESS J0632+057, a possible spectral turnover above 10 GeV may exist in Fermi J0632.6+0548, as appears to be common in other established gamma-ray binaries.

  9. 12 GeV detector technology at Jefferson Lab

    Energy Technology Data Exchange (ETDEWEB)

    Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

    2013-04-19

    The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

  10. Metal Induced Gap States on Pt/Ge(001)

    NARCIS (Netherlands)

    Oncel, N.; van Beek, W.J.; Poelsema, Bene; Zandvliet, Henricus J.W.

    2007-01-01

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) we have studied the electronic properties of a novel, planar, metal semiconductor contact. For this purpose we take advantage of the unique properties of the Pt-modified Ge(001) surface, which consist of coexisting

  11. Effect of pressure on magnetism of UIrGe

    International Nuclear Information System (INIS)

    Pospíšil, Jiří; Haga, Yoshinori; Tateiwa, Naoyuki; Kambe, Shinsaku; Yamamoto, Etsuji; Gouchi, Jun; Uwatoko, Yoshiya; Nagasaki, Shoko; Honda, Fuminori; Homma, Yoshiya

    2017-01-01

    We report the effect of hydrostatic pressure on the electronic state of the antiferromagnet UIrGe, which is isostructural and isoelectronic with the ferromagnetic superconductors UCoGe and URhGe. A series of electrical resistivity measurements in a piston–cylinder-type cell and a cubic-anvil cell were performed at hydrostatic pressures up to 15 GPa. The Néel temperature decreases with increasing pressure. We constructed a p–T phase diagram and estimated the critical pressure p_c, where the antiferromagnetism vanishes, as ∼12 GPa. The antiferromagnetic/paramagnetic transition appears to be first order. We suggest a scenario of competing antiferromagnetic inter-J- and ferromagnetic intra-J*-chain interactions in UIrGe. A moderate increase in the effective electron mass was detected in the vicinity of p_c. A discussion of the electronic specific heat γ and electron–electron correlation term A using the Kadowaki–Woods relation is given. (author)

  12. USA hiiglane GE Healthcare korraldab meditsiinis revolutsiooni / Andrew Jack

    Index Scriptorium Estoniae

    Jack, Andrew

    2006-01-01

    General Electricu tütarettevõte GE Healthcare võttis üle Briti diagnostika- ja bioteaduse uurimisfirma Amersham, firma strateegia tuum on võimsa skaneerimistehnoloogia ja meditsiinilise diagnostika üksteisele lähendamine. Lisa: Aeg sorteerida andmeid infotehnoloogia abil

  13. High-field magnetization of UCuGe single crystal

    Czech Academy of Sciences Publication Activity Database

    Andreev, Alexander V.; Mushnikov, N. V.; Gozo, T.; Honda, F.; Sechovský, V.; Prokeš, K.

    346-347, - (2004), s. 132-136 ISSN 0921-4526 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : uranium intermetallics * UCuGe * high fields * magnetic anisotropy * field-induced phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.679, year: 2004

  14. Thermal expansion of the superconducting ferromagnet UCoGe

    NARCIS (Netherlands)

    Gasparini, A.; Huang, Y.K.; Hartbaum, J.; v. Löhneysen, H.; de Visser, A.

    2010-01-01

    We report measurements of the coefficient of linear thermal expansion, α(T), of the superconducting ferromagnet UCoGe. The data taken on a single-crystalline sample along the orthorhombic crystal axes reveal a pronounced anisotropy with the largest length changes along the b axis. The large values

  15. Oblique roughness replication in strained SiGe/Si multilayers

    NARCIS (Netherlands)

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  16. Fabrication of Cu(x)Ge(y) Nanoplatelets

    Czech Academy of Sciences Publication Activity Database

    Křenek, T.; Fajgar, Radek; Medlín, R.; Klementová, Mariana; Novotný, F.; Dřínek, Vladislav

    2011-01-01

    Roč. 11, č. 9 (2011), s. 8279-8283 ISSN 1533-4880. [EuroCVD-18. Kinsale, 04.09.2011-09.09.2011] Institutional research plan: CEZ:AV0Z40720504; CEZ:AV0Z40320502 Keywords : CuGe * alloy * nanoplatelet Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.563, year: 2011

  17. 7-GeV Advanced Photon Source Conceptual Design Report

    International Nuclear Information System (INIS)

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV

  18. Injection error monitor for KEK 12 GeV PS

    International Nuclear Information System (INIS)

    Shirakata, Masashi; Sato, Hikaru; Toyama, Takeshi; Marutsuka, Katsumi.

    1994-01-01

    The injection error monitor is now developing for an easy tuning of the main ring beam injection at the KEK 12 GeV proton synchrotron. The beam trajectory on the horizontal phase space plane is obtained by a test bench system. The injection error monitor proved to be available for the beam injection tuning. (author)

  19. The structure of collective bands in 72Ge

    International Nuclear Information System (INIS)

    Tripathy, K.C.; Sahu, R.

    1999-01-01

    In recent years, extensive experimental studies of nuclei in the mass region A=80 have led to exciting discoveries of large ground state deformations, coexistence of shapes, band crossings, rapid variations of structure with changing nucleon numbers etc. A theoretical study of 72 Ge is presented

  20. Antilocalization of Coulomb Blockade in a Ge-Si Nanowire

    DEFF Research Database (Denmark)

    Higginbotham, Andrew P.; Kuemmeth, Ferdinand; Larsen, Thorvald Wadum

    2014-01-01

    The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated experimentally in a Ge-Si nanowire quantum dot. Strong spin-orbit coupling in this hole-gas system leads to antilocalization of Coulomb blockade peaks, consistent with theory. In particular, the peak...

  1. Sputtering of Ge(001): transition between dynamic scaling regimes

    DEFF Research Database (Denmark)

    Smilgies, D.-M.; Eng, P.J.; Landemark, E.

    1997-01-01

    We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two...

  2. Synthesis and characterization of germanium monosulphide (GeS)

    Indian Academy of Sciences (India)

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

  3. GE NANOCLUSTERS IN PLANAR GLASS WAVEGUIDES DEPOSITED BY PECVD

    DEFF Research Database (Denmark)

    Haiyan, Ou; Olsen, Johnny H.; Rottwitt, Karsten

    2004-01-01

    Germanium (Ge) has been widely used as the dopant in the core layer of planar glass waveguides to increase the refractive index because it gives a small propagation loss. Plasma enhanced chemical vapour deposition (PECVD) and flame hydrolysis deposition (FHD) are two main material deposition meth...

  4. CMS event at 900 GeV - 5 May 2015

    CERN Document Server

    CMS, Collaboration

    2015-01-01

    This proton collision di-jet event was detected at the CMS detector. The red bars represent the energy deposited in the electromagnetic calorimeter and the blue represent the energy in the hadronic calorimeter. The total hadronic and electromagnetic energy is approximately 30 GeV in each jet. The back-to-back jet cones can be clearly seen emanating from the vertex.

  5. GeV C.W. electron microtron design report

    International Nuclear Information System (INIS)

    1982-05-01

    Rising interest in the nuclear physics community in a GeV C.W. electron accelerator reflects the growing importance of high-resolution short-range nuclear physics to future advances in the field. In this report major current problems are reviewed and the details of prospective measurements which could be made with a GeV C.W. electron facility are discussed, together with their impact on an understanding of nuclear forces and the structure of nuclear matter. The microtron accelerator has been chosen as the technology to generate the electron beams required for the research discussed because of the advantages of superior beam quality, low capital and operating cost and capability of furnishing beams of several energies and intensities simultaneously. A complete technical description of the conceptual design for a 2 GeV double-sided C.W. electron microtron is presented. The accelerator can furnish three beams with independently controlled energy and intensity. The maximum current per beam is 100 μamps. Although the precise objective for maximum beam energy is still a subject of debate, the design developed in this study provides the base technology for microtron accelerators at higher energies (2 to 6 GeV) using multi-sided geometries

  6. GeSn Based Near and Mid Infrared Heterostructure Detectors

    Science.gov (United States)

    2018-02-07

    prestigious journals. 15.  SUBJECT TERMS Plasmonic Enhancement, Metal Nanostructures, CMOS, Photodetectors, Germanium-Tin Diode, IR Focal Plane Array...following features: (1) ease of manufacture in a foundry via a simple epitaxial structure, (2) end- fire coupling into on-chip transparent Ge or Si

  7. GeV C. W. electron microtron design report

    Energy Technology Data Exchange (ETDEWEB)

    1982-05-01

    Rising interest in the nuclear physics community in a GeV C.W. electron accelerator reflects the growing importance of high-resolution short-range nuclear physics to future advances in the field. In this report major current problems are reviewed and the details of prospective measurements which could be made with a GeV C.W. electron facility are discussed, together with their impact on an understanding of nuclear forces and the structure of nuclear matter. The microtron accelerator has been chosen as the technology to generate the electron beams required for the research discussed because of the advantages of superior beam quality, low capital and operating cost and capability of furnishing beams of several energies and intensities simultaneously. A complete technical description of the conceptual design for a 2 GeV double-sided C.W. electron microtron is presented. The accelerator can furnish three beams with independently controlled energy and intensity. The maximum current per beam is 100 ..mu..amps. Although the precise objective for maximum beam energy is still a subject of debate, the design developed in this study provides the base technology for microtron accelerators at higher energies (2 to 6 GeV) using multi-sided geometries.

  8. Self-assembled growth of nanostructural Ge islands on bromine ...

    Indian Academy of Sciences (India)

    bromine-passivated Si(111) surfaces at room temperature. AMAL K DAS1 ... Both the islands and the layer are nanocrystalline. This appears ..... coworkers estimated an activation energy of 0.59 ±0.1 eV for Ge diffusion on Si(100) and 0.45 eV ...

  9. Trapping effect on the resolution of Ge(Li) detectors

    International Nuclear Information System (INIS)

    Venturini, L.; Suarez, A.A.

    1980-01-01

    This work describes the measurement of the resolution variation of a Ge(Li) detector as a function of irradiation position by a collimated gamma-ray beam. Also the resolution dependence has been measured as a function of the detector applied voltage, using collimated and non-collimated gamma-ray beam. (A.C.A.S.) [pt

  10. Application of Ge/Li/-spectrometry in boreholes

    International Nuclear Information System (INIS)

    Chrusciel, E.

    1976-01-01

    The paper presents the results of Ge/Li/ spectrometry applications in boreholes. The natural radioactivity measurements as well as rare elements determinations with the use of 252 Cf neutron source and capture-gamma and activation techniques are described. The minimum concentrations of certain elements to be determined in the field circumstances are evaluated on the basis of the model experiments. (author)

  11. 90 - GeV Higgs boson in supersymmetric models

    International Nuclear Information System (INIS)

    Grzadkowski, B.; Kalinowski, J.; Pokorski, S.

    1989-07-01

    We discuss supersymmetric models with a hierarchy of vacuum expectation values of Higgs fields. These models predict one of the physical neutral Higgs bosons to have its mass very close to the Z-boson mass. Properties of such a 90-GeV Higgs boson are discussed. (author)

  12. Characterization of Ge-nanocrystal films with photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Bostedt, C.; Buuren, T. van; Willey, T.M.; Nelson, A.J.; Franco, N.; Moeller, T.; Terminello, L.J.

    2003-01-01

    The Ge 3d core-levels of germanium nanocrystal films have been investigated by means of photoelectron spectroscopy. The experiments indicate bulk-like coordinated atoms in the nanocrystals and suggest structured disorder on the nanoparticle surface. The results underline the importance of the surface on the overall electronic structure of this class of nanostructured materials

  13. The majorana {sup 76}Ge double-beta decay project

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, C.E.; Adles, E.; Anderson, D.; Avignone, F.T.; Barabash, A.; Bowyer, T.W.; Brodzinski, R.L.; Brudanin, V.; Champangne, A.; Collar, J.I.; Doe, P.J.; Egorov, S.; Elliott, S.R.; Farach, H.A.; Gaitskell, R.; Jordan, D.; Jain, R.K.; Kazkaz, K.; King, G.; Kochetov, O.; Konovalov, S.; Kouzes, R.; Miley, H.S.; Palms, J.M.; Pitts, W.K.; Reeves, J.H.; Robertson, R.G.H.; Rohm, R.; Sandukovsky, S.; Smith, L.E.; Stekhanov, V.; Thompson, R.C.; Tornow, W.; Umatov' , V.; Warner, R.; Webb, J.; Wilkerson, J.F.; Young, A

    2003-07-01

    The interest and relevance of next-generation 0{sub v} {beta}{beta}-decay experiments is increasing. Even with nonzero neutrino mass strongly suggested by solar and atmospheric neutrino experiments sensitive to {delta}m{sup 2}, 0{sub v} {beta}{beta}-decay experiments are still the only way to establish the Dirac or Majorana nature of neutrinos by measuring the effective electron neutrino mass, . In addition, the atmospheric neutrino oscillation experiments imply that at least one neutrino has a mass greater than about 50 meV. The Majorana Experiment expects to probe an effective neutrino mass near this critical value. Majorana is a next-generation {sup 76}Ge double-beta decay search. It will employ 500 kg of Ge, isotopically enriched to 86% in {sup 76}Ge, in the form of {approx} 200 detectors in a close-packed array. Each crystal will be electronically segmented and each segment fitted with pulse-shape analysis electronics. This combination of segmentation and pulse-shape analysis significantly improves our ability to discriminate neutrinoless double beta-decay from internal cosmogenic {sup 68}Ge and {sup 60}Co. The half-life sensitivity is estimated to be 4.2 x 10{sup 27} y corresponding to a range of {<=} 20 - 70 meV, depending on the nuclear matrix elements used to interpret the data.

  14. Polarized protons from the source to 70 GeV

    International Nuclear Information System (INIS)

    Makdisi, Y.I.

    1985-01-01

    This energy range covers the current project at the AGS and extends well beyond it. I shall report on our learning experience at BNL, discuss the potential for improvement, and the limitations of extending the AGS resonance jumping technique beyond 25 GeV

  15. 750 GeV diphoton resonance and electric dipole moments

    Directory of Open Access Journals (Sweden)

    Kiwoon Choi

    2016-09-01

    Full Text Available We examine the implication of the recently observed 750 GeV diphoton excess for the electric dipole moments of the neutron and electron. If the excess is due to a spin zero resonance which couples to photons and gluons through the loops of massive vector-like fermions, the resulting neutron electric dipole moment can be comparable to the present experimental bound if the CP-violating angle α in the underlying new physics is of O(10−1. An electron EDM comparable to the present bound can be achieved through a mixing between the 750 GeV resonance and the Standard Model Higgs boson, if the mixing angle itself for an approximately pseudoscalar resonance, or the mixing angle times the CP-violating angle α for an approximately scalar resonance, is of O(10−3. For the case that the 750 GeV resonance corresponds to a composite pseudo-Nambu–Goldstone boson formed by a QCD-like hypercolor dynamics confining at ΛHC, the resulting neutron EDM can be estimated with α∼(750 GeV/ΛHC2θHC, where θHC is the hypercolor vacuum angle.

  16. Ultra thin films of nanocrystalline Ge studied by AFM and ...

    Indian Academy of Sciences (India)

    Unknown

    peak position and an asymmetrical broadening on the lower frequency side when compared with the spectrum of the bulk Ge sample. The shift of the Raman .... resultant fit to Ic(ω) (1) (thin line) and a Lorentzian function (dotted line). Figure 6 shows Raman spectra of the samples B and C. A shoulder at 280 cm–1 can be.

  17. Anomalous activation of shallow B+ implants in Ge

    DEFF Research Database (Denmark)

    Yates, B.R.; Darby, B.L.; Rudawski, N.G.

    2011-01-01

    The electrical activation of B+ implantation at 2 keV to doses of 5.0×1013-5.0×1015 cm-2 in crystalline and pre-amorphized Ge following annealing at 400 °C for 1.0 h was studied using micro Hall effect measurements. Preamorphization improved activation for all samples with the samples implanted...... to a dose of 5.0×1015 cm-2 displaying an estimated maximum active B concentration of 4.0×1020 cm-3 as compared to 2.0×1020 cm-3 for the crystalline sample. However, incomplete activation was observed for all samples across the investigated dose range. For the sample implanted to a dose of 5.0×1013 cm -2......, activation values were 7% and 30%, for c-Ge and PA-Ge, respectively. The results suggest the presence of an anomalous clustering phenomenon of shallow B+ implants in Ge. © 2011 Elsevier B.V. All rights reserved....

  18. Regrowth of Si and Ge under laser irradiation

    International Nuclear Information System (INIS)

    Bertolotti, M.; Vitali, G.

    1979-01-01

    The effects of pulsed laser irradiation on amorphous layers of Si and Ge obtained via ion implantation are considered. Amorphous-polycrystalline, amorphous-single crystal and polycrystalline-single crystal transitions have been obtained. Residual disorder and mechanical damage are considered. (author)

  19. The phase diagram of annealed Ge(111)/Ga

    DEFF Research Database (Denmark)

    Molinàs-Mata, P.; Böhringer, M.; Artacho, E.

    1995-01-01

    A study of the annealed phases of Ge(111)/Ga for coverages above 0.05 ML is presented. The surfaces are investigated by low-energy electron diffraction, scanning tunneling microscopy, and partly by photoemission and surface X-ray diffraction using synchrotron radiation. For Ga coverages beyond 0....

  20. Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

    Science.gov (United States)

    Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

    2014-06-01

    We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

  1. Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

    International Nuclear Information System (INIS)

    Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S.K.

    2014-01-01

    We have carried out comprehensive computational and experimental study on the face-centered cubic Ge 2 Sb 2 Te 5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In 2 Te 3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation αhν = β(hν - E g ) 2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials. (orig.)

  2. Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

    Science.gov (United States)

    Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

    2017-10-01

    The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

  3. A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

    2017-06-01

    In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

  4. Impact parameter analysis of proton-antiproton elastic scattering from √s=7.6 GeV to √s=546 GeV

    International Nuclear Information System (INIS)

    Fearnley, T.

    1985-09-01

    The proton-antiproton elastic profile function GAMMA (b) and inelastic overlap function Gsub(in)(b) are calculated from a coherent set of proton-antiproton elastic scattering data at Psub(L)=30 and 50 GeV/c (√s=7.6 and 9.8 GeV), and at √s=53 and 546 GeV. The energy dependence of Gsub(in)(b) is studied in the low energy regime and in the high energy regime. The increase of the inelastic cross section from 50 GeV/c to 30 GeV/c and from √s=53 GeV to √s=546 GeV is found to originate from a peripheral increase of Gsub(in) around 1 fm, accompanied by a non-negligible central increase. The proton-antiproton collision at √s=53 GeV is shown to be slightly less absorptive centrally than pp at this energy, while it is more absorptive peripherally around 1.2 fm. The inelastic overlap functions strongly disagree with the predictions of geometrical scaling and factorizing eikonal models, both in the low energy regime psub(L)=30-50 GeV/c and in the high energy regime √s=53-546 GeV

  5. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  6. Development of a production scale purification of Ge-68 from irradiated gallium metal

    Energy Technology Data Exchange (ETDEWEB)

    Fitzsimmons, Jonathan M.; Mausner, Leonard [Brookhaven National Laboratory, Upton, NY (United States)

    2015-05-01

    Germanium-68 (Ge-68) is produced by proton irradiation of a gallium metal target and purified by organic extraction. The Ge-68 can be used in a medical isotope generator to produce Gallium-68 (Ga-68) which can be used to radiolabel PET imaging agents. The emerging use of Ge-68 in the Ga-68 medical isotope generator has caused us to develop a new purification method for Ge-68 that does not use toxic solvents. The purpose of this work was to develop a production scale separation of Ge-68 that utilizes a leaching step to remove a bulk of the gallium metal, followed by purification with Sephadex {sup copyright} G25. Production scale (300 mCi) purification was performed with the new method. The purified Ge-68 contained the highest radioactivity concentration of Ge-68 produced at BNL; the sample meet Department of Energy specifications and the method had an excellent recovery of Ge-68.

  7. Ge-intercalated graphene: The origin of the p-type to n-type transition

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-09-01

    Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

  8. Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

    Science.gov (United States)

    Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

    2018-03-01

    Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

  9. Study of nuclear interactions of 400 GeV protons in emulsion

    International Nuclear Information System (INIS)

    Otterlund, I.; Kullberg, R.; Stenlund, E.; Andersson, B.; Nilsson, G.; Kim, C.O.; Lorry, J.; Meton, C.; Schune, D.; Chu, T.; Villot, B.; Kaiser, R.; Vincent, M.A.; Baumann, G.; Devienne, R.; Schmitt, R.; Adamovic, O.; Juric, M.; Bolta, J.M.; Sanchis, M.A.; Bravo, L.; Niembro, R.; Ruiz, A.; Villar, E.

    1977-05-01

    400 GeV inelastic proton-emulsion nucleus interactions from an International Emulsion Group experiment at Fermilab are reported. The results are compared with the corresponding data at 67-300 GeV. (Auth.)

  10. Studying Si/SiGe disordered alloys within effective mass theory

    Science.gov (United States)

    Gamble, John; Montaño, Inès; Carroll, Malcolm S.; Muller, Richard P.

    Si/SiGe is an attractive material system for electrostatically-defined quantum dot qubits due to its high-quality crystalline quantum well interface. Modeling the properties of single-electron quantum dots in this system is complicated by the presence of alloy disorder, which typically requires atomistic techniques in order to treat properly. Here, we use the NEMO-3D empirical tight binding code to calibrate a multi-valley effective mass theory (MVEMT) to properly handle alloy disorder. The resulting MVEMT simulations give good insight into the essential physics of alloy disorder, while being extremely computationally efficient and well-suited to determining statistical properties. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

  11. Personnel protection and beam containment systems for the 3 GeV Injector

    International Nuclear Information System (INIS)

    Yotam, R.; Cerino, J.; Garoutte, R.; Hettel, R.; Horton, M.; Sebek, J.; Benson, E.; Crook, K.; Fitch, J.; Ipe, N.; Nelson, G.; Smith, H.

    1991-01-01

    The 3 GeV Injector is the electron beam source for the SPEAR Storage Ring, and its personnel safety system was designed to protect personnel from both radiation exposure and electrical hazards. The Personnel Protection System (PPS) was designed and implemented with complete redundancy and is a relay based interlock system completely independent from the machine protection system. A comprehensive monitoring of the system status, and control of the Injector PPS from the SPEAR Control Room via the control computer is a feature. The Beam Containment System (BCS) is based on beam current measurements along the Linac and on Beam Shut Off Ion Chambers (BSOIC) installed outside the Linac, at several locations around the Booster, and around the SPEAR storage ring. An outline of the design criteria is presented with more detailed description of the philosophy of the PPS logic and the BCS

  12. Neutral strange particle production in π+/K+p interactions at 250 GeV/c

    International Nuclear Information System (INIS)

    Scholten, A.J.

    1988-01-01

    This thesis in which a detailed study of K n inclusive production in K + p and π + p interactions at 250 GeV/c is presented, concentrates on neutral strange interaction products and draws some conclusions about the fate of the strange quark. In ch. 2 the experimental setup is described and in ch. 3 the series of computer programs that perform data reduction. Ch. 4 deals with the selectionn of events and neutral kaons. Also the calculations needed to correct for losses and background are described there. In ch. 5 inclusive and semi-inclusive distributions are presented and compared to data obtained in experiments at lower beam energy. In ch. 6 the data are compared with model predictions. In ch. 7 the main conclusions are summarized. (H.W.). 64 refs.; 39 refs.; 19 tabs

  13. Many-pion production in π+d reactions at 15 GeV/c

    International Nuclear Information System (INIS)

    Hagopian, V.; Gluch, D.; Hagopian, S.; Horne, C.P.; Jenkins, M.; Lannutti, J.E.; Williams, P.K.; Wind, B.; Cohn, H.O.; Bugg, W.M.; Condo, G.T.; Handler, T.; Hart, E.L.

    1979-01-01

    The average number of charged pions produced in π + d reactions at 15-GeV/c π + momentum is 3.6 +- 0.1 and the average number of π 0 's is 1.9 +- 0.2. The average number of π 0 's produced is essentially independent of the number of charged pions. About 45% of the events have four or more charged pions in the final state. The exclusive final states with four or more charged pions with zero or one π 0 are presented and compared with modified phase-space background computations. Other than the well-known resonances, such as the rho 0 , no new peaks have been observed. Coherently produced multipion systems with up to seven pions are also discussed. Detailed cross-section information for every final state is presented

  14. Evidence for the reaction πp → etaetan at 40 GeV/c

    International Nuclear Information System (INIS)

    Apel, W.D.; Augenstein, K.; Bertolucci, E.

    1975-01-01

    An experiment investigating the reaction π - +p → mγ + n has been performed at the 70 GeV IHEP-accelerator. The final state gammas are measured in a hodoscope spectrometer running on-line with a computer. In a preliminary study of data events of the reaction π - p → etaetan (eta → 2γ) are observed. At invariant masses of the etaeta-system above 1600 MeV up to 2800 MeV a clean sample free of background from π 0 π 0 -events is obtained. The ratio of production cross sections of etaeta and π 0 π 0 final states of the order 1:5 which has been found is in agreement with predictions of the quark model. Etaeta angular distributions in the Gottfried-Jackson frame for masses above 1600 MeV are not isotopic

  15. Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

    Science.gov (United States)

    Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

    Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

  16. Parameter choices for a muon recirculating linear accelerator from 5 to 63 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Berg, J. S. [Brookhaven National Lab. (BNL), Upton, NY (United States). Collider-Accelerator Dept.

    2014-06-19

    A recirculating linear accelerator (RLA) has been proposed to accelerate muons from 5 to 63 GeV for a muon collider. It should be usable both for a Higgs factory and as a stage for a higher energy collider. First, the constraints due to the beam loading are computed. Next, an expression for the longitudinal emittance growth to lowest order in the longitudinal emittance is worked out. After finding the longitudinal expression, a simplified model that describes the arcs and their approximate expression for the time of flight dependence on energy in those arcs is found. Finally, these results are used to estimate the parameters required for the RLA arcs and the linac phase.

  17. Effect of synchrotron radiation in the proposed 4 GeV Argonne microtron

    International Nuclear Information System (INIS)

    Crosbie, E.A.

    1983-01-01

    Synchrotron radiation in the sector magnets of the 4-GeV microtron designed at the Argonne National Laboratory produces a small but noticeable distortion of the closed orbits of the system and a very-significant growth of the horizontal and longitudinal phase-space emittances. Because of the small apertures in the three 25-meter linacs, it is important that the expected growth of the beam be calculated as accurately as possible. For this reason, a computer program has been written which follows the motions of individual electrons in the four dimensional horizontal and longitudinal phase space as they are accelerated in the system. As the electrons go through the sector magnets, they emit quanta at random with randomly chosen energies. The final results show 63% emittance (area π) values of 0.15 mm mrad and 630 keV degrees for the horizontal and longitudinal phase spaces, respectively. The 99% values are about 4.6 times larger

  18. JLab High Efficiency Klystron Baseline Design for 12 GeV Upgrade

    International Nuclear Information System (INIS)

    Hovater, J.; Delayen, Jean; Harwood, Leigh; Nelson, Richard; Wang, Haipeng

    2003-01-01

    A computer design of a 13.5 kW, 1497 MHz, CW type, 55% efficiency, 0.8 microPv beam perveance, ∼40 dB gain, 5-cavity klystron has been developed for JLab 12 GeV Upgrade project.The design uses TRICOMP codes to simulate the gun, mod-anode section, solenoid focus channel and beam dump. The klystron tube was designed by JPNDISK (1D) code initially and then optimized by MASK (2D) code for the baseline parameters. All of these codes have been bunch marked by JLab 5 kW operational klystrons. The details of design parameters and the simulations by MAFIA (3D) for the cavity couplings tuners, and window are also going to be presented.

  19. Unexpected Ge-Ge contacts in the two-dimensional Ge{sub 4}Se{sub 3}Te phase and analysis of their chemical cause with the density of energy (DOE) function

    Energy Technology Data Exchange (ETDEWEB)

    Kuepers, Michael; Konze, Philipp M.; Maintz, Stefan; Steinberg, Simon [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Mio, Antonio M.; Cojocaru-Miredin, Oana; Zhu, Min; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Mueller, Merlin; Mayer, Joachim [Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen University (Germany); Luysberg, Martina [Ernst-Ruska-Center, Forschungszentrum Juelich GmbH (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH Aachen University (Germany)

    2017-08-14

    A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe{sub 0.75}Te{sub 0.25} has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge{sub 4}Se{sub 3}Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge{sub 4}Se{sub 3}Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

    International Nuclear Information System (INIS)

    Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M.; Sun, X.; Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S.

    2011-01-01

    We investigated the molecular beam deposition of Al 2 O 3 on Ge 0.95 Sn 0.05 surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge 1-x Sn x and Ge/Ge 1-x Sn x surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al 2 O 3 high-κ gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge 1-x Sn x /Al 2 O 3 gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge 1-x Sn x layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D it ) in the range of 10 12 eV -1 cm -2 in mid gap and higher close to the valence band edge.

  1. Chemical states and optical properties of thermally evaporated Ge-Te and Ge-Sb-Te amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Singh, D.; Shandhu, S. [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India)

    2012-07-15

    Thin amorphous films of Ge{sub 22}Sb{sub 22}Te{sub 56} and Ge{sub 50}Te{sub 50} have been prepared from their respective polycrystalline bulk on glass substrates by thermal evaporation technique. The amorphous nature of the films was checked with X-ray diffraction studies. Amorphous-to-crystalline transition of the films has been induced by thermal annealing and the structural phases have been identified by X-ray diffraction. The phase transformation temperature of the films was evaluated by temperature dependent sheet resistance measurement. The chemical structure of the amorphous films has been investigated using X-ray photoelectron spectroscopy and the role of Sb in phase change Ge{sub 22}Sb{sub 22}Te{sub 56} film is discussed. Survey and core level (Ge 3d, Te 3d, Te 4d, Sb 3p, Sb 3d, O 1s, C 1s) band spectra has been recorded and analyzed. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-vis-NIR spectroscopy. The optical band gap, refractive index and extinction coefficient are also presented for thermally evaporated amorphous thin films.

  2. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  3. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

    International Nuclear Information System (INIS)

    Regan, M.J.

    1993-12-01

    Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous Fe x Ge 1-x and Mo x Ge 1-x are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x 2 or MoGe 3 . Finally, by manipulating the deposited power flux and rates of growth, Fe x Ge 1-x films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys

  4. Influence of Si and Ge on the magnetic phase transition and magnetocaloric properties of MnFe(P, Si, Ge)

    International Nuclear Information System (INIS)

    Cam Thanh, D.T.; Brueck, E.; Tegus, O.; Klaasse, J.C.P.; Buschow, K.H.J.

    2007-01-01

    Recently, we found a large magnetocaloric effect (MCE) and favourable magnetic properties in low cost and nontoxic MnFe(P, Si, Ge) compounds [D.T. Cam Thanh, E. Brueck, O. Tegus, J.C.P. Klaasse, T.J. Gortenmulder, K.H.J. Buschow, J. Appl. Phys. 99 (2006) 08Q107]. These compounds are promising for magnetic refrigeration applications. One of the interesting points in these compounds is a nonlinear dependence of the Curie temperature (T C ) on Si concentration. This dependence is associated with the change in the lattice parameters a and c, and their ratio c/a. Compounds with larger a parameter and smaller c/a ratio have higher T C . It is clear that Si and Ge atoms play an important role in the magnetic and magnetocaloric properties in the MnFe(P, Si, Ge) compounds. In this paper, we study the effect of Si and Ge on the magnetic phase transition in these materials. Our study shows that the temperature of the phase transition, from paramagnetic to ferromagnetic, can be tuned in the room temperature range without losing giant magnetocaloric properties

  5. Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

    Science.gov (United States)

    Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

  6. EXAFS and RDF studies of Ge27S53I20 glass

    International Nuclear Information System (INIS)

    Nasu, H.; Myoren, H.; Makida, S.; Imura, T.; Osaka, Y.

    1988-01-01

    Detailed X-ray diffraction measurements and extended X-ray absorption fine structure (EXAFS) have been applied to Ge 23 S 57 I 20 glass as a typical chalcohalide glass and to GeS 2 glass for comparison, in order to investigate the structure of Ge-S-I glass system. From the derived curves against atomic distance, the formation of Ge-I bonds is evidenced in the glass structure. (author) 4 refs., 2 figs., 1 tab

  7. Study of the source term of radiation of the CDTN GE-PET trace 8 cyclotron with the MCNPX code

    Energy Technology Data Exchange (ETDEWEB)

    Benavente C, J. A.; Lacerda, M. A. S.; Fonseca, T. C. F.; Da Silva, T. A. [Centro de Desenvolvimento da Tecnologia Nuclear / CNEN, Av. Pte. Antonio Carlos 6627, 31270-901 Belo Horizonte, Minas Gerais (Brazil); Vega C, H. R., E-mail: jhonnybenavente@gmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas, Zac. (Mexico)

    2015-10-15

    Full text: The knowledge of the neutron spectra in a PET cyclotron is important for the optimization of radiation protection of the workers and individuals of the public. The main objective of this work is to study the source term of radiation of the GE-PET trace 8 cyclotron of the Development Center of Nuclear Technology (CDTN/CNEN) using computer simulation by the Monte Carlo method. The MCNPX version 2.7 code was used to calculate the flux of neutrons produced from the interaction of the primary proton beam with the target body and other cyclotron components, during 18F production. The estimate of the source term and the corresponding radiation field was performed from the bombardment of a H{sub 2}{sup 18}O target with protons of 75 μA current and 16.5 MeV of energy. The values of the simulated fluxes were compared with those reported by the accelerator manufacturer (GE Health care Company). Results showed that the fluxes estimated with the MCNPX codes were about 70% lower than the reported by the manufacturer. The mean energies of the neutrons were also different of that reported by GE Health Care. It is recommended to investigate other cross sections data and the use of physical models of the code itself for a complete characterization of the source term of radiation. (Author)

  8. In-plane g factor of low-density two-dimensional holes in a Ge quantum well.

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Tzu-Ming [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Harris, Charles Thomas [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Huang, Shih-Hsien [National Taiwan Univ., Taipei (Taiwan); Chuang, Yen [National Taiwan Univ., Taipei (Taiwan); Li, Jiun-Yun [National Taiwan Univ., Taipei (Taiwan); Liu, CheeWee [National Taiwan Univ., Taipei (Taiwan)

    2017-12-01

    High-mobility two-dimensional (2D) holes residing in a Ge quantum well are a new electronic system with potentials in quantum computing and spintronics. Since for any electronic material, the effective mass and the g factor are two fundamental material parameters that determine the material response to electric and magnetic fields, measuring these two parameters in this material system is thus an important task that needs to be completed urgently. Because of the quantum confinement in the crystal growth direction (z), the biaxial strain of epitaxial Ge on SiGe, and the valance band nature, both the effective mass and the g factor can show very strong anisotropy. In particular, the in-plane g factor (gip) can be vanishingly small while the perpendicular g factor (gz) can be much larger than 2. Here we report the measurement of gip at very low hole densities using in-plane magneto-resistance measurement performed at the NHMFL.

  9. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    Science.gov (United States)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  10. Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer

    Science.gov (United States)

    Kuryliuk, V.; Korotchenkov, O.; Cantarero, A.

    2012-02-01

    We present computational results for strain effects on charge carrier confinement in GexSi1-x quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Using realistic parameters and conditions for hemisphere and pyramid QDs, it is pointed out that an uncapped hemisphere dot deposited on the Si surface with an intermediate ultrathin oxide layer offers advantageous electron-hole separation distances with respect to a square-based pyramid grown directly on Si. The enhanced separation is associated with a larger electron localization depth in the Si substrate for uncapped hemisphere dots. Thus, for dot diameters smaller than 15-20 nm and surface density of the dots (nQD) ranging from about 1010 to 1012 cm-2, the localization depth may be enhanced from about 8 nm for a pyramid to 38 nm for a hemisphere dot. We find that the effect in a hemisphere dot is very sensitive to the dot density and size, whereas the localization depth is not significantly affected by the variation of the Ge fraction x in GexSi1-x and the aspect ratio of the dot. We also calculate the effect of the fixed oxide charge (Qox) with densities ranging from 10-9 to 10-7 C/cm2 for 10-Ωcm p-type Si wafers on the carrier confinement. Although the confinement potential can be strongly perturbed by the charge at nQD less than ≈4×1011 cm-2, it is not very sensitive to the value of Qox at higher nQD. Since, to our knowledge, there are no data on carrier confinement for Ge QDs deposited on oxidized Si surfaces, these results might be applicable to functional devices utilizing separated electrons and holes such as photovoltaic devices, spin transistors, and quantum computing components. The use of hemisphere QDs placed on oxidized Si rather than pyramid dots grown on bare Si may help to confine charge carriers deeper

  11. Computational Medicine

    DEFF Research Database (Denmark)

    Nygaard, Jens Vinge

    2017-01-01

    The Health Technology Program at Aarhus University applies computational biology to investigate the heterogeneity of tumours......The Health Technology Program at Aarhus University applies computational biology to investigate the heterogeneity of tumours...

  12. Grid Computing

    Indian Academy of Sciences (India)

    A computing grid interconnects resources such as high performancecomputers, scientific databases, and computercontrolledscientific instruments of cooperating organizationseach of which is autonomous. It precedes and is quitedifferent from cloud computing, which provides computingresources by vendors to customers ...

  13. Green Computing

    Directory of Open Access Journals (Sweden)

    K. Shalini

    2013-01-01

    Full Text Available Green computing is all about using computers in a smarter and eco-friendly way. It is the environmentally responsible use of computers and related resources which includes the implementation of energy-efficient central processing units, servers and peripherals as well as reduced resource consumption and proper disposal of electronic waste .Computers certainly make up a large part of many people lives and traditionally are extremely damaging to the environment. Manufacturers of computer and its parts have been espousing the green cause to help protect environment from computers and electronic waste in any way.Research continues into key areas such as making the use of computers as energy-efficient as Possible, and designing algorithms and systems for efficiency-related computer technologies.

  14. Effects of flexible substrate thickness on Al-induced crystallization of amorphous Ge thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oya, Naoki [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Toko, Kaoru, E-mail: toko@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, Noriyuki; Yoshizawa, Noriko [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan); Suemasu, Takashi [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2015-05-29

    Amorphous germanium (a-Ge) thin films were directly crystallized on flexible plastic substrates at 325 °C using Al-induced crystallization. The thickness of the plastic substrate strongly influenced the crystal quality of the resulting polycrystalline Ge layers. Using a thicker substrate lowered the stress on the a-Ge layer during annealing, which increased the grain size and fraction of (111)-oriented grains within the Ge layer. Employing a 125-μm-thick substrate led to 95% (111)-oriented Ge with grains having an average size of 100 μm. Transmission electron microscopy demonstrated that the Ge grains had a low-defect density. Production of high-quality Ge films on plastic substrates allows for the possibility for developing Ge-based electronic and optical devices on inexpensive flexible substrates. - Highlights: • Polycrystalline Ge thin films are directly formed on flexible plastic substrates. • Al-induced crystallization allows the low-temperature growth (325 °C) of amorphous Ge. • The substrate bending during annealing strongly influences the crystal quality of poly-Ge. • A thick substrate (125 μm) leads to 95% (111)-oriented Ge with grains 100 μm in size.

  15. Assembly of Ge nanocrystals on SiO2 via a stress-induced dewetting process

    International Nuclear Information System (INIS)

    Sutter, E; Sutter, P

    2006-01-01

    We use epitaxial Ge islands on silicon-on-insulator (001) to initiate and drive the dewetting of the ultrathin ( 2 layer and transforms the Ge islands into oxide-supported, electrically isolated, Ge-rich nanocrystals. We investigate the process of dewetting and demonstrate that it can be used for the controlled assembly of nanocrystals-from isolated single ones to dense arrays

  16. 77 FR 38714 - Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires

    Science.gov (United States)

    2012-06-28

    ... TE/GE Compliance Check Questionnaires AGENCY: Internal Revenue Service (IRS), Treasury. ACTION..., the IRS is soliciting comments concerning the TE/GE Compliance Check Questionnaires. DATES: Written... [email protected] . SUPPLEMENTARY INFORMATION: Title: TE/GE Compliance Check Questionnaires. OMB...

  17. 78 FR 63565 - Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires

    Science.gov (United States)

    2013-10-24

    ... TE/GE Compliance Check Questionnaires AGENCY: Internal Revenue Service (IRS), Treasury. ACTION..., the IRS is soliciting comments concerning the TE/GE Compliance Check Questionnaires. DATES: Written... . SUPPLEMENTARY INFORMATION: Title: TE/GE Compliance Check Questionnaires. OMB Number: 1545-2071. Form Number: Not...

  18. Large-area selective CVD epitaxial growth of Ge on Si substrates

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.; Nanver, L.K.

    2011-01-01

    Selective epitaxial growth of crystalline Ge on Si in a standard ASM Epsilon 2000 CVD reactor is investigated for the fabrication of Ge p+n diodes. At the deposition temperature of 700?C, most of the lattice mismatch-defects are trapped within first 300nm of Ge growth and good quality single crystal

  19. Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.B.; Nanver, L.K.

    2012-01-01

    A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

  20. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...