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Sample records for gd2o3-doped hfo2 high-k

  1. Synthesis and different optical properties of Gd2O3 doped sodium zinc tellurite glasses

    Science.gov (United States)

    Samanta, Buddhadev; Dutta, Dibakar; Ghosh, Subhankar

    2017-06-01

    A series of Gd2O3 doped sodium zinc tellurite [xGd2O3-(0.8-x) TeO2-0.1Na2O-0.1ZnO] glasses are prepared by the conventional melt quenching method and their optical properties have been studied. UV-vis spectrophotometric studies within the wavelength range from 230 nm-800 nm are carried out in the integrating sphere mode to study the effect of Gd2O3 doping on the optical band gap (Eg), refractive index (n), dielectric constant (εr) and susceptibility (χ). Other physical properties like molar volume, molar refraction, polarizability, metallization criterion, number density of rare-earth ions (N), polaron radius (rp), inter ionic distance (ri), molar cation polarizability (∑αi), number of oxide ions in chemical composition (NO2-), optical band gap based electronic oxide ion polarizability (αO2-) and optical basicity (Λ) of glass samples have been studied on the basis of UV-vis spectra and density profile of the different glasses.

  2. A facile synthesis of high quality nanostructured CeO2 and Gd2O3-doped CeO2 solid electrolytes for improved electrochemical performance.

    Science.gov (United States)

    Kuo, Yu-Lin; Su, Yu-Ming; Chou, Hung-Lung

    2015-06-07

    This study describes the use of a composite nitrate salt solution as a precursor to synthesize CeO2 and Gd2O3-doped CeO2 (GDC) nanoparticles (NPs) using an atmospheric pressure plasma jet (APPJ). The microstructures of CeO2 and GDC NPs were found to be cubical and spherical shaped nanocrystallites with average particle sizes of 10.5 and 6.7 nm, respectively. Reactive oxygen species, detected by optical emission spectroscopy (OES), are believed to be the major oxidative agents for the formation of oxide materials in the APPJ process. Based on the material characterization and OES observations, the study effectively demonstrated the feasibility of preparing well-crystallized GDC NPs by the APPJ system as well as the gas-to-particle mechanism. Notably, the Bader charge of CeO2 and Ce0.9Gd0.1O2 characterized by density function theory (DFT) simulation and AC impedance measurements shows that Gd helps in increasing the charge on Ce0.9Gd0.1O2 NPs, thus improving their conductivity and making them candidate materials for electrolytes in solid oxide fuel cells.

  3. Synthesis, characterization and radiation damage studies of high-k dielectric (HfO2) films for MOS device applications

    Science.gov (United States)

    Manikanthababu, N.; Arun, N.; Dhanunjaya, M.; Saikiran, V.; Nageswara Rao, S. V. S.; Pathak, A. P.

    2015-03-01

    The current trend in miniaturization of metal oxide semiconductor devices needs high-k dielectric materials as gate dielectrics. Among all the high-k dielectric materials, HfO2 enticed the most attention, and it has already been introduced as a new gate dielectric by the semiconductor industry. High dielectric constant (HfO2) films (10 nm) were deposited on Si substrates using the e-beam evaporation technique. These samples were characterized by various structural and electrical characterization techniques. Rutherford backscattering spectrometry, X-ray reflectivity, and energy-dispersive X-ray analysis measurements were performed to determine the thickness and stoichiometry of these films. The results obtained from various measurements are found to be consistent with each other. These samples were further characterized by I-V (leakage current) and C-V measurements after depositing suitable metal contacts. A significant decrease in the leakage current and the corresponding increase in device capacitance are observed when these samples were annealed in oxygen atmosphere. Furthermore, we have studied the influence of gamma irradiation on the electrical properties of these films as a function of the irradiation dose. The observed increase in the leakage current accompanied by changes in various other parameters, such as accumulation capacitance, inversion capacitance, flat band voltage, mid-gap voltage, etc., indicates the presence of various types of defects in irradiated samples.

  4. Electrical properties of HfO2 high- k thin-film MOS capacitors for advanced CMOS technology

    Science.gov (United States)

    Khairnar, A. G.; Patil, L. S.; Salunke, R. S.; Mahajan, A. M.

    2015-11-01

    We deposited the hafnium dioxide (HfO2) thin films on p-Si (100) substrates. The thin films were deposited with deposition time variations, viz 2, 4, 7 and 20 min using RF-sputtering technique. The thickness and refractive index of the films were measured using spectroscopic ellipsometer. The thicknesses of the films were measured to be 13.7, 21.9, 35.38 and 92.2 nm and refractive indices of 1.90, 1.93, 1.99 and 1.99, respectively, of the films deposited for 2, 4, 7 and 20 min deposition time. The crystal structures of the deposited HfO2 thin films were determined using XRD spectra and showed the monoclinic structure, confirmed with the ICDD card no 34-0104. Aluminum metallization was carried to form the Al/HfO2/ p-Si MOS structures by using thermal evaporation system with electrode area of 12.56 × 10-4 cm2. Capacitance voltage and current voltage measurements were taken to know electrical behavior of these fabricated MOS structures. The electrical parameters such as dielectric constant, flat-band shift and interface trap density determined through CV measurement were 7.99, 0.11 V and 6.94 × 1011 eV-1 cm-2, respectively. The low leakage current density was obtained from IV measurement of fabricated MOS structure at 1.5 V is 4.85 × 10-10 Acm-2. Aforesaid properties explored the suitability of the fabricated HfO2 high- k-based MOS capacitors for advanced CMOS technology.

  5. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

    2018-03-01

    In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

  6. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

    OpenAIRE

    Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

    2006-01-01

    We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

  7. Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: Application to high-k material HfO2 based MOS devices

    Science.gov (United States)

    Maity, N. P.; Maity, Reshmi; Baishya, Srimanta

    2017-11-01

    In this paper presents a straightforward efficient investigation of tunneling current density for ultra thin oxide layer based metal-oxide-semiconductor (MOS) devices to realization the gate current as a function of applied potential and oxide thickness. Solutions to the Schrödinger's wave equation are evolved for the different potential energy regions of the MOS device considering appropriate effective mass for each region. For finding approximate mathematical solutions to linear differential equations using spatially changeable coefficients the Wentzel-Kramers-Brillouin (WKB) approximation technique is considered. A p-substrate based n-channel MOS device has been analyzed consisting of SiO2 material as the oxide dielectric along with high-k material HfO2. The tunnel resistivity is correspondingly assessed employing this tunneling current density model. Synopsys Technology Computer Aided Design (TCAD) tool results are employed to validate the analytical model. Tremendous agreements among the results are observed.

  8. Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

    Science.gov (United States)

    Zhang, Shumao; Kuo, Yue

    2018-03-01

    Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

  9. Effect of film properties for non-linear DPL model in a nanoscale MOSFET with high-k material: ZrO2/HfO2/La2O3

    Science.gov (United States)

    Shomali, Zahra; Ghazanfarian, Jafar; Abbassi, Abbas

    2015-07-01

    Numerical simulation of non-linear non-Fourier heat conduction within a nano-scale metal-oxide-semiconductor field-effect transistor (MOSFET) is presented under the framework of Dual-Phase-Lag model including the boundary phonon scattering. The MOSFET is modeled in four cases of: (I) thin silicon slab, (II) including uniform heat generation, (III) double-layered buried oxide MOSFET with uniform heat generation in silicon-dioxide layer, and (IV) high-k/metal gate transistor. First, four cases are studied under four conditions of (a) constant bulk and (b) constant film thermal properties, (c) temperature-dependent properties of bulk silicon, and (d) temperature-dependent thermal properties of film silicon. The heat source and boundary conditions are similar to what existed in a real MOSFET. It is concluded that in all cases, considering the film properties lowers the temperature jump due to the reduction of the Knudsen number. Furthermore, the speed of heat flux penetration for film properties is less than that of the cases concerning bulk properties. Also, considering the temperature-dependent properties drastically changes the temperature and heat flux distributions within the transistor, which increases the diffusion speed and more, decreases the steady state time. Calculations for case (III) presents that all previous studies have underestimated the value of the peak temperature rise by considering the constant bulk properties of silicon. Also, it is found that among the high-k dielectrics investigated in case (IV), zirconium dioxide shows the least peak temperature rise. This presents that zirconium dioxide is a good candidate as far as the thermal issues are concerned.

  10. Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

    Science.gov (United States)

    Tereshchenko, O. E.; Golyashov, V. A.; Eremeev, S. V.; Maurin, I.; Bakulin, A. V.; Kulkova, S. E.; Aksenov, M. S.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.; Dmitriev, D. V.; Toropov, A. I.; Gutakovskii, A. K.; Khandarkhaeva, S. E.; Prosvirin, I. P.; Kalinkin, A. V.; Bukhtiyarov, V. I.; Latyshev, A. V.

    2015-09-01

    In this letter, we present electrical and magnetic characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs), along with the effect of pseudomorphic Si as a passivating interlayer on GaAs(001) grown by molecular beam epitaxy. Ultrathin HfO2 high-k gate dielectric films (3-15 nm) have been grown on Si/GaAs(001) structures through evaporation of a Hf/HfO2 target in NO2 gas. The lowest interface states density Dit at Au/HfO2/Si/GaAs(001) MOS-structures were obtained in the range of (6 -13 )×1011 eV-1 cm-2 after annealing in the 400-500 °C temperature range as a result of HfO2 crystallization and the Si layer preservation in non-oxidized state on GaAs. HfO2-based MOSCAPs demonstrated the ferromagnetic properties which were attributed to the presence of both cation and anion vacancies according to the first-principle calculations. Room-temperature ferromagnetism in HfO2 films allowed us to propose a structure for the ferromagnetic MOS spin-detector.

  11. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    OpenAIRE

    Chin-Sheng Pang; Jenn-Gwo Hwu

    2014-01-01

    In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S), Al/HfO2/SiO2/Si (H), and Al/3HfO2/SiO2/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V) measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer,...

  12. Gd2O3-doped silica @ Au nanoparticles for in vitro imaging cancer biomarkers using surface-enhanced Raman scattering

    Science.gov (United States)

    Xiao, Lifu; Tian, Xiumei; Harihar, Sitaram; Li, Qifei; Li, Li; Welch, Danny R.; Zhou, Anhong

    2017-06-01

    There has been an interest in developing multimodal approaches to combine the advantages of individual imaging modalities, as well as to compensate for respective weaknesses. We previously reported a composite nano-system composed of gadolinium-doped mesoporous silica nanoparticle and gold nanoparticle (Gd-Au NPs) as an efficient MRI contrast agent for in vivo cancer imaging. However, MRI lacks sensitivity and is unsuitable for in vitro cancer detection. Thus, here we performed a study to use the Gd-Au NPs for detection and imaging of a widely recognized human cancer biomarker, epidermal growth factor receptor (EGFR), in individual human cancer cells with surface-enhanced Raman scattering (SERS). The Gd-Au NPs were sequentially conjugated with a monoclonal antibody recognizing EGFR and a Raman reporter molecule, 4-meraptobenzoic acid (MBA), to generate a characteristic SERS signal at 1075 cm- 1. By spatially mapping the SERS intensity at 1075 cm- 1, cellular distribution of EGFR and its relocalization on the plasma membrane were measured in situ. In addition, the EGFR expression levels in three human cancer cell lines (S18, A431 and A549) were measured using this SERS probe, which were consistent with the comparable measurements using immunoblotting and immunofluorescence. Our SERS results show that functionalized Gd-Au NPs successfully targeted EGFR molecules in three human cancer cell lines and monitored changes in single cell EGFR distribution in situ, demonstrating its potential to study cell activity under physiological conditions. This SERS study, combined with our previous MRI study, suggests the Gd-Au nanocomposite is a promising candidate contrast agent for multimodal cancer imaging.

  13. Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

    Science.gov (United States)

    Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

    2016-10-01

    In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

  14. Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO2 films

    Science.gov (United States)

    Gopalan, Sundararaman; Ramesh, Sivaramakrishnan; Dutta, Shibesh; Virajit Garbhapu, Venkata

    2018-02-01

    It is well known that Hf-based dielectrics have replaced the traditional SiO2 and SiON as gate dielectric materials for conventional CMOS devices. By using thicker high-k materials such as HfO2 rather than ultra-thin SiO2, we can bring down leakage current densities in MOS devices to acceptable levels. HfO2 is also one of the potential candidates as a blocking dielectric for Flash memory applications for the same reason. In this study, effects of substrate heating and oxygen flow rate while depositing HfO2 thin films using CVD and effects of post deposition annealing on the physical and electrical characteristics of HfO2 thin films are presented. It was observed that substrate heating during deposition helps improve the density and electrical characteristics of the films. At higher substrate temperature, Vfb moved closer to zero and also resulted in significant reduction in hysteresis. Higher O2 flow rates may improve capacitance, but also results in slightly higher leakage. The effect of PDA depended on film thickness and O2 PDA improved characteristics only for thick films. For thinner films forming gas anneal resulted in better electrical characteristics.

  15. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    Directory of Open Access Journals (Sweden)

    Chin-Sheng Pang

    2014-04-01

    Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

  16. Synthesis of freestanding HfO2 nanostructures

    Directory of Open Access Journals (Sweden)

    Boyle Kayla

    2011-01-01

    Full Text Available Abstract Two new methods for synthesizing nanostructured HfO2 have been developed. The first method entails exposing HfTe2 powders to air. This simple process resulted in the formation of nanometer scale crystallites of HfO2. The second method involved a two-step heating process by which macroscopic, freestanding nanosheets of HfO2 were formed as a byproduct during the synthesis of HfTe2. These highly two-dimensional sheets had side lengths measuring up to several millimeters and were stable enough to be manipulated with tweezers and other instruments. The thickness of the sheets ranged from a few to a few hundred nanometers. The thinnest sheets appeared transparent when viewed in a scanning electron microscope. It was found that the presence of Mn enhanced the formation of HfO2 by exposure to ambient conditions and was necessary for the formation of the large scale nanosheets. These results present new routes to create freestanding nanostructured hafnium dioxide. PACS: 81.07.-b, 61.46.Hk, 68.37.Hk.

  17. HfO2/Pr2O3 gate dielectric stacks

    Science.gov (United States)

    Sidorov, F.; Molchanova, A.; Rogozhin, A.

    2016-12-01

    Electrical properties of MOS structures based on molecular beam epitaxy formed HfO2/Pr2O3 gate dielectric stacks have been studied by CV, GV and IV characteristics. Electrical properties of the structures with HfO2/Pr2O3 and PEALD HfO2 dielectric layers were compared. Higher gate leakage current and lower interface trap level density in the structure with HfO2/Pr2O3 dielectric layer was observed.

  18. Ion-radical synergy in HfO2 etching studied with a XeF2/Ar+ beam setup

    International Nuclear Information System (INIS)

    Gevers, P. M.; Beijerinck, H. C. W.; Sanden, M. C. M. van de; Kessels, W. M. M.

    2008-01-01

    To gain more insight into fundamental aspects of the etching behavior of Hf-based high-k materials in plasma etch reactors, HfO 2 films were etched in a multiple-beam setup consisting of a low energy Ar + ion beam and a XeF 2 radical beam. The etch rate and etch products were monitored by real-time ellipsometry and mass spectrometry, respectively. Although etching of HfO 2 in XeF 2 /Ar + chemistry is mainly a physical effect, an unambiguous proof of the ion-radical synergistic effect for the etching of HfO 2 is presented. The etch yield for 400 eV Ar + ions at a substrate temperature of 300 deg. C was 0.3 atoms/ion for Ar + sputtering and increased to 2 atoms/ion when XeF 2 was also supplied. The etch yield proved to follow the common square root of ion energy dependence both for pure sputtering and radical enhanced etching, with a threshold energy at room temperature of 69±17 eV for Ar + ions and 54±14 eV for Ar + ions with XeF 2

  19. Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

    Science.gov (United States)

    Sarkar, Pranab Kumar; Roy, Asim

    2015-08-01

    The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

  20. SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering

    Science.gov (United States)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S. V. S.; Pathak, A. P.

    2016-07-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO2 is the only alternative to reduce the leakage current. HfO2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I-V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  1. Study of Direct-Contact HfO2/Si Interfaces

    Directory of Open Access Journals (Sweden)

    Noriyuki Miyata

    2012-03-01

    Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

  2. Single layer of Ge quantum dots in HfO2for floating gate memory capacitors.

    Science.gov (United States)

    Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

    2017-04-28

    High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO 2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2 /floating gate of single layer of Ge QDs in HfO 2 /tunnel HfO 2 /p-Si wafers. Both Ge and HfO 2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10 15 m -2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO 2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO 2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO 2 NCs boundaries, while another part of the Ge atoms is present inside the HfO 2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO 2 , distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

  3. Electronic States of High-k Oxides in Gate Stack Structures

    Science.gov (United States)

    Zhu, Chiyu

    In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

  4. Processing and characterization of electrospun Y2O3-stabilized ZrO2 (YSZ) and Gd2O3-doped CeO2 (GDC) nanofibers

    International Nuclear Information System (INIS)

    Azad, Abdul-Majeed; Matthews, Thomas; Swary, Jessica

    2005-01-01

    The technique of electrospinning was employed to fabricate uniform one-dimensional (1-D) inorganic-organic composite nanofibers from alcoholic solutions containing polyvinyl pyrrolidone (PVP) and suitable aqueous precursors of yttrium and zirconium ions in one case and gadolinium and cerium ions in the other. Upon firing and sintering under carefully pre-selected time-temperature profiles (heating rate, temperature and soak time), ceramic nanofibers retaining the original morphological features observed in the as-spun composition were obtained. Analytical tools, such as simultaneous TG-DSC, Raman spectroscopy and SEM were employed to elucidate the pathway of ceramic phase formation and the systematic evolution of morphological features in the spun and the processed fibers. X-ray diffraction was used to identify the crystalline fate of the final products. It was found that several millimeter long, uniform YSZ and GDC nanofibers of high phase purity could be fabricated

  5. Hot corrosion behavior of nanostructured Gd2O3 doped YSZ thermal barrier coating in presence of Na2SO4 + V2O5 molten salts

    Directory of Open Access Journals (Sweden)

    Yixiong Wang

    2017-08-01

    Full Text Available Nickel-based superalloy DZ125 was first sprayed with a NiCrAlY bond coat and followed with a nanostructured 2 mol% Gd2O3−4.5 mol% Y2O3-ZrO2 (2GdYSZ topcoat using air plasma spraying (APS. Hot corrosion behavior of the as-sprayed thermal barrier coatings (TBCs were investigated in the presence of 50 wt% Na2SO4 + 50 wt% V2O5 as the corrosive molten salt at 900 °C for 100 h. The analysis results indicate that Gd doped YVO4 and m-ZrO2 crystals were formed as corrosion products due to the reaction of the corrosive salts with stabilizers (Y2O3, Gd2O3 of zirconia. Cross-section morphology shows that a thin layer called TGO was formed at the bond coat/topcoat interface. After hot corrosion test, the proportion of m-ZrO2 phase in nanostructured 2GdYSZ coating is lower than that of nano-YSZ coating. The result reveals that nanostructured 2GdYSZ coating exhibits a better hot corrosion resistance than nano-YSZ coating.

  6. Raman, dielectric and variable range hopping nature of Gd2O3-doped K0.5N0.5NbO3 piezoelectric ceramics

    Directory of Open Access Journals (Sweden)

    Mahesh Peddigari

    2015-10-01

    Full Text Available (K0.5Na0.5NbO3 (KNN + x wt% Gd2O3 (x = 0 -1.5 ceramics have been prepared by conventional solid state reaction method. The effect of Gd2O3 on the structural, microstructural and dielectric properties of KNN ceramics were studied systematically. The effect of Gd2O3 on phase transformation from orthorhombic to psuedocubic structure is explained interms of changes in the internal vibration modes of NbO6 octahedra. The Raman intensity of the stretching mode v1 enhanced and shifted toward higher wavenumber with Gd2O3 concentration, which is attributed to the increase in polarizability and change in the O-Nb-O bond angles. Microstructural analysis revealed that the grain size of the KNN ceramics decreases from 2.26 ± 1.07 μm to 0.35 ± 0.13 μm and becomes homogenous with an increase in Gd2O3 concentration. The frequency dependent dielectric spectra are analyzed by using Havriliak-Negami function. The fitted symmetry parameter and relaxation time (τ are found to be 0.914 and 8.78 × 10−10 ± 5.5 × 10−11 s, respectively for the sample doped with x = 1.0. The addition of Gd2O3 to the KNN shifted the polymorphic phase transition orthorhombic to tetragonal transition temperature (TO-T from 199oC to 85oC with enhanced dielectric permittivity (ε′ = 1139 at 1 MHz. The sample with x = 1.0, shown a high dielectric permittivity (ε′ = 879 and low dielectric loss (<5% in the broad temperature range (-140oC – 150oC with the Curie temperature 307 oC can have the potential for high temperature piezoelectric and tunable RF circuit applications. The temperature dependent AC-conductivity follows the variable range hopping conduction mechanism by obtaining the slope -0.25 from the ln[ln(ρac] versus ln(T graph in the temperature range of 133 K-308 K. The effect of Gd2O3 on the Mott’s parameters such as density of states (N(EF, hopping length (RH, and hopping energy (WH have been discussed.

  7. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

    2012-01-01

    Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2 films on SiO 2 /Si substrates.

  8. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    Science.gov (United States)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  9. Growth stress evolution in HfO2/SiO2 multilayers

    International Nuclear Information System (INIS)

    Li, Jingping; Fang, Ming; He, Hongbo; Shao, Jianda; Fan, Zhengxiu; Li, Zhaoyang

    2012-01-01

    Growth stress in hafnium oxide/silicon dioxide (HfO 2 /SiO 2 ) multilayers was measured in situ to understand the role of the sublayers and the influence of the underlayers' structural features. Experiments using three- and six-layer films were performed by electron-beam evaporation. During deposition, the developing trend of the force per unit width was controlled by changing the thickness ratio of the HfO 2 and SiO 2 layers. The substrate material affected the initial stress evolution of HfO 2 film. The structural feature of the HfO 2 layer onto which SiO 2 was deposited and the whole film thickness have a combined effect on the stress evolution of the SiO 2 layer. - Highlights: ► Film radius stress relates to thickness ratio of sublayers. ► The initial stress evolutions of HfO 2 depended on the substrate material. ► The structural feature of H layer affects the stress evolution of L layer.

  10. Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    Science.gov (United States)

    Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

    2018-03-01

    Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

  11. Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

    Science.gov (United States)

    Mu, Yifei; Zhao, Ce Zhou; Lu, Qifeng; Zhao, Chun; Qi, Yanfei; Lam, Sang; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2017-09-01

    This paper reports the low-dose-rate radiation response of Al-HfO2/SiO2-Si MOS devices, in which the gate dielectric was formed by atomic layer deposition (ALD) with 5-nm equivalent oxide thickness. The degradation of the devices was characterized by a pulse capacitance-voltage (CV) and on-site radiation response technique under continuous gamma (γ) ray exposure at a relatively low dose rate of 0.116 rad (HfO2)/s. Compared with conventional CV measurements, the proposed measurements extract significant variations of flat-band voltage shift of the hafnium based MOS devices. The large flat-band voltage shift is mainly attributed to the radiation-induced oxide trapped charges, which are not readily compensated by bias-induced charges produced over the measurement timescales (for timescales less than 5 ms). A negative flat-band voltage shift up to -1.02 V was observed under a positive biased irradiation with the total dose up to 40 krad (HfO2) and with the electric field of 0.5 MV/cm. This is attributed to net positive charge generation in the HfO2 oxide layer. The generated charges are transported towards the HfO2/SiO2 interface, and then form effective trapped holes in the HfO2. Similarly, a positive flat-band voltage shift up to 1.1 V was observed from irradiation under negative bias with an electric field of -0.5 MV/cm. The positive shift is mainly due to the accumulation of trapped electrons. Analyses of the experimental results suggest that both hole and electron trapping can dominate the radiation response performance of the HfO2-based MOS devices depending upon the applied bias. It was also found there was no distinct border traps with irradiation in all cases.

  12. HfO2 nanocrystal memory on SiGe channel

    Science.gov (United States)

    Lin, Yu-Hsien; Chien, Chao-Hsin

    2013-02-01

    This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance.

  13. Highly efficient dye-sensitized solar cells based on HfO2 modified TiO2 electrodes

    International Nuclear Information System (INIS)

    Ramasamy, Parthiban; Kang, Moon-Sung; Cha, Hyeon-Jung; Kim, Jinkwon

    2013-01-01

    Graphical abstract: Display Omitted Highlights: ► HfO 2 has been used to modify TiO 2 electrodes in dye sensitized solar cells. ► HfO 2 layer increases the dye adsorption. ► Diffusion coefficient (D e ) and lifetime (τ e ) of the photoelectrons were increased. ► Solar cell efficiency (η) was greatly improved from 5.67 to 9.59%. -- Abstract: In this article, we describe the use of hafnium oxide (HfO 2 ) as a new and efficient blocking layer material to modify TiO 2 electrodes in dye sensitized solar cells. Different thicknesses of HfO 2 over-layers were prepared by simple dip coating from two different precursors and their effects on the performance of DSSCs were studied. The HfO 2 modification remarkably increases dye adsorption, resulting from the fact that the surface of HfO 2 is more basic than that of TiO 2 . Furthermore, the HfO 2 coating demonstrated increased diffusion coefficient (D e ) and lifetime (τ e ) of the photoelectrons, indicating the improved retardation of the back electron transfer, which increases short-circuit current (J sc ) and open-circuit voltage (V oc ). Thereby, the photo conversion efficiency (η) of the solar cell was greatly improved from 5.67 to 9.59% (an improvement of 69.02%) as the HfO 2 layer was coated over TiO 2 films.

  14. Optical properties of nanocrystalline HfO2 synthesized by an auto-igniting combustion synthesis

    Directory of Open Access Journals (Sweden)

    H. Padma Kumar

    2015-03-01

    Full Text Available The optical properties of nanocrystalline HfO2 synthesized using a single-step auto-igniting combustion technique is reported. Nanocrystalline hafnium oxide having particle size of the order 10–15 nm were obtained in the present method. The nanopowder was characterized using X-ray diffraction, Fourier transform infrared and Fourier transform Raman spectroscopic studies. All these studies confirm that the phase formation is complete in the combustion synthesis and monoclinic phase [P21/c(14] of HfO2 is obtained without the presence of any impurities or additional phases. The powder morphology of the as-prepared sample was studied using transmission electron microscopy and the results were in good agreement with that of the X-ray diffraction studies. The optical constants such as refractive index, extinction coefficient, optical conductivity and the band gap were estimated from UV–vis spectroscopic techniques. The band gap of nanocrystalline HfO2 was found to be 5.1 eV and the sample shows a broad PL emission at 628 nm. It is concluded that the transitions between intermediate energy levels in the band gap are responsible for the interesting photoluminescent properties of nanocrystalline HfO2.

  15. Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO 2 ) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO 2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO 2 interface at an energy level E t = 1.59 eV below the HfO 2 conduction band edge with density N t = 1.36 × 10 19 cm −3 . A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO 2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  16. Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

    Science.gov (United States)

    K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

    2011-01-01

    Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

  17. Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Yong-Qing; Chang, Chia-Wei; Yao, Chih-Kai; Liao, Jiunn-Der

    2013-01-01

    10-nm-thick atomic layer deposited HfO 2 films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi x O y induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi x O y with increasing annealing temperatures. The existence of HfSi x O y broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi x O y induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO 2 films were assessed by nano-scratch and indentation. ► Scratch depth of HfO 2 films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO 2 films increased with the increase of annealing temperatures

  18. Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials

    Science.gov (United States)

    Zhu, Dong-Ming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

    2004-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2-15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications will also be discussed.

  19. Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

    International Nuclear Information System (INIS)

    Mroczyński, Robert; Taube, Andrzej; Gierałtowska, Sylwia; Guziewicz, Elżbieta; Godlewski, Marek

    2012-01-01

    The feasibility of the application of double-gate dielectric stacks with fabricated by atomic layer deposited (ALD) HfO 2 and Al 2 O 3 layers in non-volatile semiconductor memory (NVSM) devices was investigated. Significant improvement in retention at elevated temperatures after the application of ALD high-k oxides was demonstrated. Superior memory window (extrapolated at 10 years) of flat-band voltage (U fb ) value of the order of 2.6 V and 4.55 V at 85 °C, for stack with HfO 2 and Al 2 O 3 , respectively, was obtained. Moreover, the analysis of conduction mechanisms in the investigated stacks under negative voltage revealed F-N tunneling in the range of high values of electric field intensity and lowering of barrier height with increasing temperature.

  20. Hydrogen-dependent low frequency noise and its physical mechanism of HfO2 resistance change random access memory

    Science.gov (United States)

    Chen, Y. Q.; Liu, X.; Liu, Y.; Peng, C.; Fang, W. X.; En, Y. F.; Huang, Y.

    2017-12-01

    The effect of hydrogen on low frequency noise characteristics of HfO2 resistance change random access memories (RRAMs) was investigated in this paper. The experimental results show that HfO2 RRAMs after hydrogen treatment take on the better uniformity of switch characteristics and the conduction enhancement behavior. Furthermore, it was found that the low frequency noise characteristics of the HfO2 RRAMs was significantly impacted by the hydrogen treatment, and at three kinds of typical resistance states, the low frequency noises of the HfO2 RRAMs after hydrogen treatment are larger than those of the fresh HfO2 RRAMs. The mechanism could be attributed to H induced oxygen vacancies, which serve as the additional traps for conduction due to the trap-assisted tunneling process. This will result in more random trap/detrap processes in the conducting filament, which gives rise to the larger low frequency noise in the HfO2 RRAMs. The results of this study may be useful in the design and application of HfO2 RRAMs.

  1. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  2. Issues concerning the determination of solubility products of sparingly soluble crystalline solids. Solubility of HfO2(cr)

    International Nuclear Information System (INIS)

    Rai, Dhanpat; Kitamura, Akira; Rosso, Kevin M.; Sasaki, Takayuki; Kobayashi, Taishi

    2016-01-01

    Solubility studies were conducted with HfO 2 (cr) solid as a function HCl and ionic strength ranging from 2.0 to 0.004 mol kg -1 . These studies involved (1) using two different amounts of the solid phase, (2) acid washing the bulk solid phase, (3) preheating the solid phase to 1400 C, and (4) heating amorphous HfO 2 (am) suspensions to 90 C to ascertain whether the HfO 2 (am) converts to HfO 2 (cr) and to determine the solubility from the oversaturation direction. Based on the results of these treatments it is concluded that the HfO 2 (cr) contains a small fraction of less crystalline, but not amorphous, material [HfO 2 (lcr)] and this, rather than the HfO 2 (cr), is the solubility-controlling phase in the range of experimental variables investigated in this study. The solubility data are interpreted using both the Pitzer and SIT models and they provide log 10 K 0 values of -(59.75±0.35) and -(59.48±0.41), respectively, for the solubility product of HfO 2 (lcr)[HfO 2 (lcr) + 2H 2 O ↔ Hf 4+ + 4OH - ]. The log 10 of the solubility product of HfO 2 (cr) is estimated to be < -63. The observation of a small fraction of less crystalline higher solubility material is consistent with the general picture that mineral surfaces are often structurally and/or compositionally imperfect leading to a higher solubility than the bulk crystalline solid. This study stresses the urgent need, during interpretation of solubility data, of taking precautions to make certain that the observed solubility behavior for sparingly-soluble solids is assigned to the proper solid phase.

  3. Perpendicular magnetic anisotropy of Co/Pt bilayers on ALD HfO2

    Science.gov (United States)

    Vermeulen, Bart F.; Wu, Jackson; Swerts, Johan; Couet, Sebastien; Linten, Dimitri; Radu, Iuliana P.; Temst, Kristiaan; Rampelberg, Geert; Detavernier, Christophe; Groeseneken, Guido; Martens, Koen

    2016-10-01

    Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junction material stacks using MgO as a dielectric. In this contribution, we present the first report of PMA at the interface with a high-κ dielectric grown by Atomic Layer Deposition, HfO2. The PMA appears after annealing a HfO2/Co/Pt/Ru stack in N2 with the Keff of 0.25 mJ/m2 as determined by Vibrating Sample Magnetometry. X-Ray Diffraction and Transmission Electron Microscopy show that the appearance of PMA coincides with interdiffusion and the epitaxial ordering of the Co/Pt bilayer. High-κ dielectrics are especially interesting for Voltage Control of Magnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies.

  4. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    International Nuclear Information System (INIS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-01-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  5. Role of Al doping in the filament disruption in HfO2 resistance switches

    Science.gov (United States)

    Brivio, Stefano; Frascaroli, Jacopo; Spiga, Sabina

    2017-09-01

    Resistance switching devices, whose operation is driven by formation (SET) and dissolution (RESET) of conductive paths shorting and disconnecting the two metal electrodes, have recently received great attention and a deep general comprehension of their operation has been achieved. However, the link between switching characteristics and material properties is still quite weak. In particular, doping of the switching oxide layer has often been investigated only for looking at performance upgrade and rarely for a meticulous investigation of the switching mechanism. In this paper, the impact of Al doping of HfO2 devices on their switching operations, retention loss mechanisms and random telegraph noise traces is investigated. In addition, phenomenological modeling of the switching operation is performed for device employing both undoped and doped HfO2. We demonstrate that Al doping influences the filament disruption process during the RESET operation and, in particular, it contributes in preventing an efficient restoration of the oxide with respect to undoped devices.

  6. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Directory of Open Access Journals (Sweden)

    T. S. N. Sales

    2017-05-01

    Full Text Available In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2 nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM with electron back scattering diffraction (EBSD, and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%.

  7. Field-enhanced route to generating anti-Frenkel pairs in HfO2

    Science.gov (United States)

    Schie, Marcel; Menzel, Stephan; Robertson, John; Waser, Rainer; De Souza, Roger A.

    2018-03-01

    The generation of anti-Frenkel pairs (oxygen vacancies and oxygen interstitials) in monoclinic and cubic HfO2 under an applied electric field is examined. A thermodynamic model is used to derive an expression for the critical field strength required to generate an anti-Frenkel pair. The critical field strength of EaFcr˜101GVm-1 obtained for HfO2 exceeds substantially the field strengths routinely employed in the forming and switching operations of resistive switching HfO2 devices, suggesting that field-enhanced defect generation is negligible. Atomistic simulations with molecular static (MS) and molecular dynamic (MD) approaches support this finding. The MS calculations indicated a high formation energy of Δ EaF≈8 eV for the infinitely separated anti-Frenkel pair, and only a decrease to Δ EaF≈6 eV for the adjacent anti-Frenkel pair. The MD simulations showed no defect generation in either phase for E <3 GVm-1 , and only sporadic defect generation in the monoclinic phase (at E =3 GVm-1 ) with fast (trec<4 ps ) recombination. At even higher E but below EaFcr both monoclinic and cubic structures became unstable as a result of field-induced deformation of the ionic potential wells. Further MD investigations starting with preexisting anti-Frenkel pairs revealed recombination of all pairs within trec<1 ps , even for the case of neutral vacancies and charged interstitials, for which formally there is no electrostatic attraction between the defects. In conclusion, we find no physically reasonable route to generating point-defects in HfO2 by an applied field.

  8. Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

    Directory of Open Access Journals (Sweden)

    Gabriel González

    2015-01-01

    Full Text Available In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers.

  9. Structural transformation of HfO2 nano-particles under compression

    International Nuclear Information System (INIS)

    Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

    2016-01-01

    In recent years, nano-structured materials are extensively investigated for their wide applications in electronics, optics, magnetic data storage, catalysis, ceramics and many others as it show new physical and chemical properties with reduction of size. HfO 2 has a very high dielectric constant compared to SiO 2 and this is being considered as a gate insulator in FET as a replacement of SiO 2 . So HfO 2 has become very important material for study in modern electronic world. In order to know the structure under compression, we have performed the high pressure X-ray diffraction of HfO 2 nano-particles using XPRESS beamline at Elettra synchrotron facility, Trieste. The pressure evolution of XRD is given. A new peak is observed at about 7.8 GPa pressure at an angle (2ϴ) 9.80 between the peaks for (-111) and (111) planes. Also a new peak is observed at about 11.3 GPa pressure at angle(2ϴ) 15.04°. We observe an increase in peak width as pressure increases indicating grain size decreases. We have estimated the grain size of HfO 2 nano-particle from the peak for (011) plane using the Scherrer formula and variation with pressure is shown. A change in slope of grain size variation is seen near 6.7 GPa and 11.3 GPa where a new peak appeared. However we observe discontinuity in grain size 3.3 GPa and 37 GPa. The intensity of peak from (011) plane decreases with increasing pressure and vanished above 11.3 GPa. The peak shifting with pressure is plotted and we observe a decrease in slope with increasing pressure indicating an increase in stiffness. The lines are for visual impression

  10. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    International Nuclear Information System (INIS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

    2015-01-01

    Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  11. Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

    Directory of Open Access Journals (Sweden)

    Yuehua Dai

    2016-08-01

    Full Text Available The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

  12. Thermal ammonia nitridation on HfO2 and hafnium silicates thin films

    International Nuclear Information System (INIS)

    Ganem, J.-J.; Trimaille, I.; Vickridge, I.C.; Gusev, E.P.

    2006-01-01

    In this paper we use isotopic tracing experiments with 15 NH 3 and 14 NH 3 to investigate the nitridation mechanisms on both hafnium silicates films (40-175 A) and HfO 2 (50 A) films deposited by MOCVD on silicon substrate covered by a 10-15 A interfacial SiO 2 layer. Nitrogen profiles in the films were obtained through nuclear resonance profiling (NRP) with the 15 N(p,αγ) 12 C resonance at 429 keV and the total amounts of atomic species and the overall stoichiometry were obtained by RBS and NRA. In the silicate films, nitrogen is incorporated both into surface and bulk regions. For HfO 2 , lowering the ammonia pressure favors the fixation of nitrogen in the near surface region of film. This phenomenon is not observed in the case of silicate films. The pressure dependence of near surface nitrogen incorporation in HfO 2 films could be related to the formation of oxygen vacancies and opens a way to control the diffusion barrier needed in the gate dielectric

  13. Distribution of electron traps in SiO2/HfO2 nMOSFET

    Science.gov (United States)

    Xiao-Hui, Hou; Xue-Feng, Zheng; Ao-Chen, Wang; Ying-Zhe, Wang; Hao-Yu, Wen; Zhi-Jing, Liu; Xiao-Wei, Li; Yin-He, Wu

    2016-05-01

    In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ˜ -1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

  14. High-temperature x-ray diffraction study of HfTiO4-HfO2 solid solutions

    International Nuclear Information System (INIS)

    Carpenter, D.A.

    1975-01-01

    High-temperature x-ray diffraction techniques were used to determine the axial thermal expansion curves of HfTiO 4 -HfO 2 solid solutions as a function of composition. Data show increasing anisotropy with increasing HfO 2 content. An orthorhombic-to-monoclinic phase transformation was detected near room temperature for compositions near the high HfO 2 end of the orthorhombic phase field and for compositions within the two-phase region (HfTiO 4 solid solution plus HfO 2 solid solution). An orthorhombic-to-cubic phase transformation is indicated by data from oxygen-deficient materials at greater than 1873 0 K. (U.S.)

  15. Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    N. P. Maity

    2014-01-01

    Full Text Available A thickness-dependent interfacial distribution of oxide charges for thin metal oxide semiconductor (MOS structures using high-k materials ZrO2 and HfO2 has been methodically investigated. The interface charge densities are analyzed using capacitance-voltage (C-V method and also conductance (G-V method. It indicates that, by reducing the effective oxide thickness (EOT, the interface charge densities (Dit increases linearly. For the same EOT, Dit has been found for the materials to be of the order of 1012 cm−2 eV−1 and it is originated to be in good agreement with published fabrication results at p-type doping level of 1×1017 cm−3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

  16. Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2014-03-01

    In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO2 and La2O3 on In0.53Ga0.47As for MOS device application. Both multilayer HfO2 (0.8 nm)/La2O3 (0.8 nm)/In0.53Ga0.47As and La2O3 (0.8 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41 nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8% and an excellent Dit of 7.0 × 1011 cm-2·eV-1 can be achieved using multiple layers of La2O3 (0.8 nm) and HfO2 (0.8 nm) on the In0.53Ga0.47As MOS capacitor with optimum thermal treatment and layer thickness.

  17. Effects of N2, O2, and Ar plasma treatments on the removal of crystallized HfO2 film

    International Nuclear Information System (INIS)

    Chen Jinghao; Yoo, Won Jong; Chan, Daniel S.H.

    2006-01-01

    The effects of plasma treatment using Ar, N 2 , and O 2 on the removal of crystallized HfO 2 films in a dilute HF solution were studied. The resulting damage in source and drain regions, and recess in isolation regions were also investigated. It was found that plasma nitridation with an ion energy of several hundred electron volts can lower the wet etch resistance of crystallized HfO 2 films up to 70 A thick through the generation of Hf-N bonds. However, thermal nitridation did not introduce sufficient nitrogen into bulk crystallized HfO 2 films to lower wet etch resistance. Plasma nitridation without bias power introduced nitrogen to the crystallized HfO 2 in the region only within 10 A of the surface. The enhancement of the etch rate of crystallized HfO 2 in dilute HF and the amount of recess in the active and isolation regions using N 2 , O 2 , and Ar plasma treatment have been evaluated. Results show that N 2 plasma treatment is the most effective in enhancing the removal rate of crystallized HfO 2 in dilute HF and minimizing recess on substrate among the plasmas studied

  18. Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

    International Nuclear Information System (INIS)

    Scheidecker, R.W.

    1979-01-01

    Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

  19. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

    International Nuclear Information System (INIS)

    Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

    2006-01-01

    To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

  20. Atomic scale engineering of HfO2-based dielectrics for future DRAM applications

    International Nuclear Information System (INIS)

    Dudek, Piotr

    2011-01-01

    Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO 2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO 2 (BaHfO 3 ) films and Ti-added BaHfO 3 (BaHf 0.5 Ti 0.5 O 3 ) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO 3 (k∝38) and BaHf 0.5 Ti 0.5 O 3 (k∝90) with respect to monoclinic HfO 2 (k∝19). Meanwhile the CET values scaled down to 1 nm for BaHfO 3 and ∝0.8 nm for BaHf 0.5 Ti 0.5 O 3 with respect to HfO 2 (CET=1.5 nm). The Hf 4+ ions substitution in BaHfO 3 by Ti 4+ ions led to a significant decrease of thermal budget from 900 C for BaHfO 3 to 700 C for BaHf 0.5 Ti 0.5 O 3 . Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control. (orig.)

  1. Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

    Directory of Open Access Journals (Sweden)

    Xiao-Ying Zhang

    2017-12-01

    Full Text Available Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si solar cells. Hafnium oxide (HfO2 has attracted much attention as a passivation layer for n-type c-Si because of its positive fixed charges and thermal stability. In this study, HfO2 films are deposited on n-type c-Si using remote plasma atomic layer deposition (RP-ALD. Post-annealing is performed using a rapid thermal processing system at different temperatures in nitrogen ambient for 10 min. The effects of post-annealing temperature on the passivation properties of the HfO2 films on c-Si are investigated. Personal computer one dimension numerical simulation for the passivated emitter and rear contact (PERC solar cells with the HfO2 passivation layer is also presented. By means of modeling and numerical computer simulation, the influence of different front surface recombination velocity (SRV and rear SRV on n-type silicon solar cell performance was investigated. Simulation results show that the n-type PERC solar cell with HfO2 single layer can have a conversion efficiency of 22.1%. The PERC using silicon nitride/HfO2 stacked passivation layer can further increase efficiency to 23.02% with an open-circuit voltage of 689 mV.

  2. Effects of different dopants on switching behavior of HfO2-based resistive random access memory

    International Nuclear Information System (INIS)

    Deng Ning; Pang Hua; Wu Wei

    2014-01-01

    In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO 2 -based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO 2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO 2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO 2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO 2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Morphology and Photoluminescence of HfO2Obtained by Microwave-Hydrothermal

    Directory of Open Access Journals (Sweden)

    Cavalcante LS

    2009-01-01

    Full Text Available Abstract In this letter, we report on the obtention of hafnium oxide (HfO2 nanostructures by the microwave-hydrothermal method. These nanostructures were analyzed by X-ray diffraction (XRD, field-emission gum scanning electron microscopy (FEG-SEM, transmission electron microscopy (TEM, energy dispersive X-ray spectrometry (EDXS, ultraviolet–visible (UV–vis spectroscopy, and photoluminescence (PL measurements. XRD patterns confirmed that this material crystallizes in a monoclinic structure. FEG-SEM and TEM micrographs indicated that the rice-like morphologies were formed due to an increase in the effective collisions between the nanoparticles during the MH processing. The EDXS spectrum was used to verify the chemical compositional of this oxide. UV–vis spectrum revealed that this material have an indirect optical band gap. When excited with 488 nm wavelength at room temperature, the HfO2nanostructures exhibited only one broad PL band with a maximum at around 548 nm (green emission.

  4. Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

    Science.gov (United States)

    Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

    2017-10-01

    The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

  5. Theoretical prediction of ion conductivity in solid state HfO2

    Science.gov (United States)

    Zhang, Wei; Chen, Wen-Zhou; Sun, Jiu-Yu; Jiang, Zhen-Yi

    2013-01-01

    A theoretical prediction of ion conductivity for solid state HfO2 is carried out in analogy to ZrO2 based on the density functional calculation. Geometric and electronic structures of pure bulks exhibit similarity for the two materials. Negative formation enthalpy and negative vacancy formation energy are found for YSH (yttria-stabilized hafnia) and YSZ (yttria-stabilized zirconia), suggesting the stability of both materials. Low activation energies (below 0.7 eV) of diffusion are found in both materials, and YSH's is a little higher than that of YSZ. In addition, for both HfO2 and ZrO2, the supercells with native oxygen vacancies are also studied. The so-called defect states are observed in the supercells with neutral and +1 charge native vacancy but not in the +2 charge one. It can give an explanation to the relatively lower activation energies of yttria-doped oxides and +2 charge vacancy supercells. A brief discussion is presented to explain the different YSH ion conductivities in the experiment and obtained by us, and we attribute this to the different ion vibrations at different temperatures.

  6. Perpendicular magnetic anisotropy of CoFeB\\Ta bilayers on ALD HfO2

    Directory of Open Access Journals (Sweden)

    Bart F. Vermeulen

    2017-05-01

    Full Text Available Perpendicular magnetic anisotropy (PMA is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\\CoFe(B interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB\\Ta bilayer deposited on amorphous high-κ dielectric (relative permittivity κ=20 HfO2, grown by atomic layer deposition (ALD. PMA with interfacial anisotropy energy Ki up to 0.49 mJ/m2 appears after annealing the stacks between 200°C and 350°C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350°C coincides with the onset of interdiffusion in the materials. High-κ dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA. The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-κ dielectrics.

  7. Properties of phases in HfO2-TiO2 system

    International Nuclear Information System (INIS)

    Red'ko, V.P.; Terekhovskij, P.B.; Majster, I.M.; Shevchenko, A.V.; Lopato, L.M.; Dvernyakova, A.A.

    1990-01-01

    A study was made on axial and linear coefficients of thermal expansion (CTE) of HfO 2 -TiO 2 system samples in concentration range of 25-50 mol% TiO 2 . Samples, containing 35 and 37 mol% TiO 2 , are characterized by the lowest values of linear CTE. Dispersion of the basic substances doesn't affect CTE value. Correlation with axial and linear CTE of samples in ZrO 2 -TiO 2 system was conducted. Presence of anisotropy of change of lattice parameters was supported for samples, containing 37.5 and 40 mol% TiO 2 . Polymorphous transformations for hafnium titanate were not revealed

  8. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  9. Finite element analysis of hollow out-of-plane HfO2microneedles for transdermal drug delivery applications.

    Science.gov (United States)

    Zhang, Yong-Hua; A Campbell, Stephen; Karthikeyan, Sreejith

    2018-02-17

    Transdermal drug delivery (TDD) based on microneedles is an excellent approach due to its advantages of both traditional transdermal patch and hypodermic syringes. In this paper, the fabrication method of hollow out-of-layer hafnium oxide (HfO 2 ) microneedles mainly based on deep reactive ion etching of silicon and atomic layer deposition of HfO 2  is described, and the finite element analysis of the microneedles based on ANSYS software is also presented. The fabrication process is simplified by using a single mask. The finite element analysis of a single microneedle shows that the flexibility of the microneedles can be easily adjusted for various applications. The finite element analysis of a 3 × 3 HfO 2 microneedle array applied on the skin well explains the "bed of nail" effect, i.e., the skin is not liable to be pierced when the density of microneedles in array increases. The presented research work here provides useful information for design optimization of HfO 2 microneedles used for TDD applications.

  10. Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

    Science.gov (United States)

    Lakshmi Ganapathi, Kolla; Bhat, Navakanta; Mohan, Sangeneni

    2014-05-01

    HfO2 thin films deposited on Si substrate using electron beam evaporation, are evaluated for back-gated graphene transistors. The amount of O2 flow rate, during evaporation is optimized for 35 nm thick HfO2 films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O2 flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post-deposition annealing and post-metallization annealing in forming gas ambience (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O2 flow rate shows the best properties as measured on MOS capacitors. To evaluate the performance of device properties, back-gated bilayer graphene transistors on HfO2 films deposited at two O2 flow rates of 3 and 20 SCCM have been fabricated and characterized. The transistor with HfO2 film deposited at 3 SCCM O2 flow rate shows better electrical properties consistent with the observations on MOS capacitor structures. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices.

  11. Coexistence of different charge states in Ta-doped monoclinic HfO2: Theoretical and experimental approaches

    DEFF Research Database (Denmark)

    Taylor, M.A.; Alonso, R.E.; Errico, L.A.

    2010-01-01

    A combination of experiments and ab initio quantum-mechanical calculations has been applied to examine hyperfine interactions in Ta-doped hafnium dioxide. Although the properties of monoclinic HfO2 have been the subject of several earlier studies, some aspects remain open. In particular, time dif...

  12. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

    Science.gov (United States)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

    2017-04-01

    In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

  13. Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer

    Science.gov (United States)

    Lee, Sang-Youl; Yang, Seung-Dong; Oh, Jae-Sub; Yun, Ho-Jin; Jeong, Kwang-Seok; Kim, Yu-Mi; Lee, Hi-Deok; Lee, Ga-Won

    In this paper, we fabricated a gate-all-around bandgap- engineered (BE) silicon-oxide-nitride-oxide-silicon (SONOS) and silicon-oxide-high-k-oxide-silicon (SOHOS) flash memory device with a vertical silicon pillar type structure for a potential solution to scaling down. Silicon nitride (Si3N4) and hafnium oxide (HfO2) were used as trapping layers in the SONOS and SOHOS devices, respectively. The BE-SOHOS device has better electrical characteristics such as a lower threshold voltage (VTH) of 0.16V, a higher gm.max of 0.593µA/V and on/off current ratio of 5.76×108, than the BE-SONOS device. The memory characteristics of the BE-SONOS device, such as program/erase speed (P/E speed), endurance, and data retention, were compared with those of the BE-SOHOS device. The measured data show that the BE-SONOS device has good memory characteristics, such as program speed and data retention. Compared with the BE-SONOS device, the erase speed is enhanced about five times in BE-SOHOS, while the program speed and data retention characteristic are slightly worse, which can be explained via the many interface traps between the trapping layer and the tunneling oxide.

  14. Gas-phase reaction studies of dipositive hafnium and hafnium oxide ions: generation of the peroxide HfO2(2+).

    Science.gov (United States)

    Lourenço, Célia; Michelini, Maria del Carmen; Marçalo, Joaquim; Gibson, John K; Oliveira, Maria Conceição

    2012-12-27

    Fourier transform ion cyclotron resonance mass spectrometry was used to characterize the gas-phase reactivity of Hf dipositive ions, Hf(2+)and HfO(2+), toward several oxidants: thermodynamically facile O-atom donor N(2)O, ineffective donor CO, and intermediate donors O(2), CO(2), NO, and CH(2)O. The Hf(2+) ion exhibited electron transfer with N(2)O, O(2), NO, and CH(2)O, reflecting the high ionization energy of Hf(+). The HfO(2+) ion was produced by O-atom transfer to Hf(2+) from N(2)O, O(2), and CO(2), and the HfO(2)(2+) ion by O-atom transfer to HfO(2+) from N(2)O; these reactions were fairly efficient. Density functional theory revealed the structure of HfO(2)(2+) as a peroxide. The HfO(2)(2+) ion reacted by electron transfer with N(2)O, CO(2), and CO to give HfO(2)(+). Estimates were made for the second ionization energies of Hf (14.5 ± 0.5 eV), HfO (14.3 ± 0.5 eV), and HfO(2) (16.2 ± 0.5 eV), and also for the bond dissociation energies, D[Hf(2+)-O] = 686 ± 69 kJ mol(-1) and D[OHf(2+)-O] = 186 ± 98 kJ mol(-1). The computed bond dissociation energies, 751 and 270 kJ mol(-1), respectively, are within these experimental ranges. Additionally, it was found that HfO(2)(2+) oxidized CO to CO(2) and is thus a catalyst in the oxidation of CO by N(2)O and that Hf(2+) activates methane to produce a carbene, HfCH(2)(2+).

  15. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal

    2015-06-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Accurate prediction of band gaps and optical properties of HfO2

    International Nuclear Information System (INIS)

    Ondračka, Pavel; Zajíčková, Lenka; Holec, David; Nečas, David

    2016-01-01

    We report on optical properties of various polymorphs of hafnia predicted within the framework of density functional theory. The full potential linearised augmented plane wave method was employed together with the Tran–Blaha modified Becke–Johnson potential (TB-mBJ) for exchange and local density approximation for correlation. Unit cells of monoclinic, cubic and tetragonal crystalline, and a simulated annealing-based model of amorphous hafnia were fully relaxed with respect to internal positions and lattice parameters. Electronic structures and band gaps for monoclinic, cubic, tetragonal and amorphous hafnia were calculated using three different TB-mBJ parametrisations and the results were critically compared with the available experimental and theoretical reports. Conceptual differences between a straightforward comparison of experimental measurements to a calculated band gap on the one hand and to a whole electronic structure (density of electronic states) on the other hand, were pointed out, suggesting the latter should be used whenever possible. Finally, dielectric functions were calculated at two levels, using the random phase approximation without local field effects and with a more accurate Bethe–Salpether equation (BSE) to account for excitonic effects. We conclude that a satisfactory agreement with experimental data for HfO 2 was obtained only in the latter case. (paper)

  17. Interface engineered HfO2-based 3D vertical ReRAM

    International Nuclear Information System (INIS)

    Hudec, Boris; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Hou, Tuo-Hung; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária

    2016-01-01

    We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO 2 /TiN memory cell. The HfO 2 switching layer is grown by atomic layer deposition on the sidewall of a SiO 2 /TiN/SiO 2 /TiN/SiO 2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 10 4 s and excellent switching stability at 400 K. Endurance of 10 7 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance. (paper)

  18. Effects of Ti doping on the dielectric properties of HfO2 nanoparticles

    Science.gov (United States)

    Pokhriyal, S.; Biswas, S.

    2016-05-01

    We report the effects of Ti doping on the dielectric properties of HfO2 [Hf1-xTixO2 (x = 0.2-0.8)] nanoparticles at room temperature. The Hf1-xTixO2 nanoparticles were synthesized by a wet chemical process. The structural and morphological properties of the derived samples were analyzed with X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and high resolution transmission electron microscopy (HRTEM). Impedance analysis was performed in pelletized samples in the frequency range of 1 MHz to 1 GHz. The obtained results were analyzed in correlation with microstructure and doping concentration in the derived samples. The average size of the Hf1-xTixO2 nanoparticles is typically in the range of 4-8 nm depending on the processing temperature. The Hf1-xTixO2 nanoparticles show reduction in crystallinity with the increase in Ti doping. The dielectric constants of the derived samples decrease with the increase in frequency. The ac-conductivity in the samples increases with the increase in frequency irrespective of Ti concentration and shows significant drop with the increase in Ti concentration at all frequencies.

  19. Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor

    Science.gov (United States)

    Jiang, Hao; Han, Lili; Lin, Peng; Wang, Zhongrui; Jang, Moon Hyung; Wu, Qing; Barnell, Mark; Yang, J. Joshua; Xin, Huolin L.; Xia, Qiangfei

    2016-06-01

    Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. Here we report a Ta/HfO2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We programmed the device to 24 discrete resistance levels, and also demonstrated over a million (220) epochs of potentiation and depression, suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO2 layer that is responsible for the switching. This work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications.

  20. Thermoluminescence in HfO2:Eu3+ powders irradiated in UV

    International Nuclear Information System (INIS)

    Ceron R, P. V.; Montes R, E.; Rivera M, T.; Diaz G, J. A. I.; Guzman M, J.

    2016-10-01

    Various inorganic compounds synthesized for photo luminescent applications have also presented a thermoluminescent (Tl) response, for example the metal oxides doped with rare earths. This property extends the use of these materials to the radiation dosimetry. For this reason, in this work the Tl response is presented in HfO 2 :Eu 3+ powders synthesized by the hydrothermal path, exposed to ultraviolet (UV) radiation of 254 nm. The kinetic parameters of its brightness curve were also calculated using the Chen expressions and the analysis method based on the shape of the curve. For the powders irradiated for 10 min the highest Tl response corresponds to the sample with 5% of the impurity, which is 6.5 times higher than the signal corresponding to the intrinsic sample. Its bright curve shows a main peak with a maximum in 148 degrees Celsius and a second order kinetics. Another test with the same material shows the Tl response against the exposure time, with a maximum in the 3 minutes. These calculations and tests constitute a first approach for the study of these powders as Tl dosimeter for UV radiation. (Author)

  1. Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

    KAUST Repository

    Chand, Umesh

    2017-08-05

    We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

  2. Electronic structure and relative stability of the coherent and semi-coherent HfO2/III-V interfaces

    Science.gov (United States)

    Lahti, A.; Levämäki, H.; Mäkelä, J.; Tuominen, M.; Yasir, M.; Dahl, J.; Kuzmin, M.; Laukkanen, P.; Kokko, K.; Punkkinen, M. P. J.

    2018-01-01

    III-V semiconductors are prominent alternatives to silicon in metal oxide semiconductor devices. Hafnium dioxide (HfO2) is a promising oxide with a high dielectric constant to replace silicon dioxide (SiO2). The potentiality of the oxide/III-V semiconductor interfaces is diminished due to high density of defects leading to the Fermi level pinning. The character of the harmful defects has been intensively debated. It is very important to understand thermodynamics and atomic structures of the interfaces to interpret experiments and design methods to reduce the defect density. Various realistic gap defect state free models for the HfO2/III-V(100) interfaces are presented. Relative energies of several coherent and semi-coherent oxide/III-V semiconductor interfaces are determined for the first time. The coherent and semi-coherent interfaces represent the main interface types, based on the Ga-O bridges and As (P) dimers, respectively.

  3. High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator

    Science.gov (United States)

    Kim, Young Mo; Park, Chulkwon; Kim, Useong; Ju, Chanjong; Char, Kookrin

    2016-01-01

    Thin-film transistors have been fabricated using La-doped BaSnO3 as n-type channels and (In,Sn)2O3 as source, drain, and gate electrodes. HfO2 was grown as gate insulators by atomic layer deposition. The field-effect mobility, Ion/Ioff ratio, and subthreshold swing of the device are 24.9 cm2 V-1 s-1, 6.0 × 106, and 0.42 V dec-1, respectively. The interface trap density, evaluated to be higher than 1013 cm-2 eV-1, was found to be slightly lower than that of the thin-film transistor with an Al2O3 gate insulator. We attribute the much smaller subthreshold swing values to the higher dielectric constant of HfO2.

  4. MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

    International Nuclear Information System (INIS)

    Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

    2006-01-01

    We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

  5. Interfacial and electrical characterization of HfO2/Al2O3/InAlAs structures

    Science.gov (United States)

    Wu, Li-fan; Zhang, Yu-ming; Lu, Hong-liang; Zhang, Yi-men

    2015-11-01

    The HfO2/Al2O3 double layer has been deposited by the atomic layer deposition (ALD) technique to a InAlAs epitaxial layer. The chemical composition at the interface was revealed by angle-resolved X-ray photoelectron spectroscopy (XPS). The electrical properties of the ALD-HfO2/Al2O3/InAlAs metal-oxide-semiconductor (MOS) capacitor have been investigated and compared with those of the ALD-HfO2/InAlAs capacitor. It is demonstrated that the insertion of the Al2O3 layer can decrease interfacial oxidation and trap charge formation. Compared with the HfO2/InAlAs capacitor, the HfO2/Al2O3/InAlAs capacitor exhibits better electrical properties with reduced hysteresis and decreasing stretch-out of the capacitance-voltage (C-V) characteristics, and the oxide trapped charge (Qot) value is significantly decreased after inserting the Al2O3 interlayer.

  6. HfO2/SiO2 multilayer based reflective and transmissive optics from the IR to the UV

    Science.gov (United States)

    Wang, Jue; Hart, Gary A.; Oudard, Jean Francois; Wamboldt, Leonard; Roy, Brian P.

    2016-05-01

    HfO2/SiO2 multilayer based reflective optics enable threat detection in the short-wave/middle-wave infrared and high power laser targeting capability in the near infrared. On the other hand, HfO2/SiO2 multilayer based transmissive optics empower early missile warning by taking advantage of the extremely low noise light detection in the deep-ultraviolet region where solar irradiation is strongly absorbed by the ozone layer of the earth's atmosphere. The former requires high laser damage resistance, whereas the latter needs a solar-blind property, i.e., high transmission of the radiation below 290 nm and strong suppression of the solar background from 300 nm above. The technical challenges in both cases are revealed. The spectral limits associated with the HfO2 and SiO2 films are discussed and design concepts are schematically illustrated. Spectral performances are realized for potential A and D and commercial applications.

  7. Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

    Science.gov (United States)

    Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; Smith, Chris; Jensen, Lars; Günster, Stefan; Mädebach, Heinrich; Ristau, Detlev

    2017-01-01

    The role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO2 and SiO2 materials.

  8. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati

    2014-03-14

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery capacity at a current density of 150 mAg -1 after 100 cycles is 548 and 853 mAhg-1 for the uncoated and HfO2-coated anodes, respectively. Material analysis reveals that the HfO2 layers are amorphous in nature and conformably coat the SnO2-based anodes. In addition, the analysis reveals that ALD HfO2 not only protects the SnO2-based anodes from irreversible reactions with the electrolyte and buffers its volume change, but also chemically interacts with the SnO2 anodes to increase battery capacity, despite the fact that HfO2 is itself electrochemically inactive. The amorphous nature of HfO2 is an important factor in explaining its behavior, as it still allows sufficient Li diffusion for an efficient anode lithiation/delithiation process to occur, leading to higher battery capacity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

    International Nuclear Information System (INIS)

    Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

    2012-01-01

    Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  10. Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films.

    Science.gov (United States)

    Pothiraja, Ramasamy; Milanov, Andrian P; Barreca, Davide; Gasparotto, Alberto; Becker, Hans-Werner; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-04-21

    Novel volatile compounds of hafnium, namely tetrakis-N,O-dialkylcarbamato hafnium(iv) [Hf((i)PrNC(O)O(i)Pr)(4)] () and tetrakis-N,N,N'-trialkylureato hafnium(iv) [Hf((i)PrNC(O)N-(Me)Et)(4)] (), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO(2) thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250 degrees C.

  11. Rapid formation of nanocrystalline HfO2 powders from amorphous hafnium hydroxide under ultrasonically assisted hydrothermal treatment

    International Nuclear Information System (INIS)

    Meskin, Pavel E.; Sharikov, Felix Yu.; Ivanov, Vladimir K.; Churagulov, Bulat R.; Tretyakov, Yury D.

    2007-01-01

    Peculiarities of hafnium hydroxide hydrothermal decomposition were studied by in situ heat flux calorimetry for the first time. It was shown that this process occurs in one exothermal stage (ΔH = -17.95 kJ mol -1 ) at 180-250 deg. C resulting in complete crystallization of amorphous phase with formation of pure monoclinic HfO 2 . It was found that the rate of m-HfO 2 formation can be significantly increased by combining hydrothermal treatment with simultaneous ultrasonic activation

  12. Gamma irradiation-induced effects on the electrical properties of HfO2-based MOS devices

    Science.gov (United States)

    Manikanthababu, N.; Arun, N.; Dhanunjaya, M.; Nageswara Rao, S. V. S.; Pathak, A. P.

    2016-02-01

    Hafnium Oxide (HfO2) thin films were synthesized by e-beam evaporation and Radio frequency magnetron sputtering techniques. Au/HfO2/Si-structured Metal Oxide Semiconductor capacitors have been fabricated to study the effects of gamma irradiation on the electrical properties, leakage current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics, as a function of irradiation dose. Systematic increase in leakage current as well as accumulation capacitance has been observed with increase in the irradiation dose. The influence of gamma irradiation and pre-existing defects on the evolution of oxide and interface traps have been studied in detail.

  13. High-temperature mass spectrometric study of the vaporization processes and thermodynamic properties in the Gd2O3-Y2O3-HfO2system.

    Science.gov (United States)

    Kablov, Eugene N; Stolyarova, Valentina L; Lopatin, Sergey I; Vorozhtcov, Viktor A; Karachevtsev, Fedor N; Folomeikin, Yuriy I

    2017-07-15

    The refractory properties of the Gd 2 O 3 -Y 2 O 3 -HfO 2 system are considered promising for the production of many high-temperature materials, e.g., thermal barrier coatings and casting molds for gas turbine engine blades. At high temperatures, components of the Gd 2 O 3 -Y 2 O 3 -HfO 2 system may vaporize selectively and this may significantly change the physicochemical properties of the materials. Therefore, information on vaporization processes and thermodynamic properties of the Gd 2 O 3 -Y 2 O 3 -HfO 2 system is of great importance. The vaporization processes and thermodynamic properties of the Gd 2 O 3 -Y 2 O 3 -HfO 2 system were studied using high-temperature Knudsen effusion mass spectrometry with a MS-1301 mass spectrometer. Vaporization was carried out using a tungsten twin effusion cell containing the samples under study and pure Gd 2 O 3 as a reference substance. Electron ionization at an energy of 25 eV was employed in the present study. It was shown that at a temperature of 2500 K the vapor over the samples in the Gd 2 O 3 -Y 2 O 3 -HfO 2 system consisted of the GdO, YO and O vapor species. The Gd 2 O 3 and Y 2 O 3 activities in the samples in the Gd 2 O 3 -Y 2 O 3 -HfO 2 system as well as their vaporization rates were derived from the partial pressures of the vapor species. Using these data the HfO 2 activities, the Gibbs energy of mixing and the excess Gibbs energy in this system were calculated at 2500 K. The thermodynamic properties of the Gd 2 O 3 -Y 2 O 3 -HfO 2 system, i.e., the component activities in the samples and the excess Gibbs energy, obtained in the present study at 2500 K, exhibited negative deviations from ideal behavior. The concentration dependence of excess Gibbs energy of the Gd 2 O 3 -Y 2 O 3 -HfO 2 system was approximated with an empirical equation. Copyright © 2017 John Wiley & Sons, Ltd. Copyright © 2017 John Wiley & Sons, Ltd.

  14. Properties of HfO2/ultrathin SiO2/Si structures and their comparison with Si MOS structures passivated in KCN solution

    Science.gov (United States)

    Pinčík, Emil; Kobayashi, Hikaru; Matsumoto, Taketoshi; Takahashi, Masao; Mikula, Milan; Brunner, Róbert

    2014-05-01

    Electrical, optical and partly structural properties are investigated on very thin ALD HfO2/ultrathin NAOS SiO2/n-type Si structures. An ALD layer was deposited at 250 °C and it contains amorphous and crystalline-probably monoclinic HfO2 phases. HfO2 films with both types of structural phases were not stable if thermal treatment above 200 °C was applied. On as- prepared samples, deep interface traps with activation energy of ΔW = 0.23 eV have been determined. After annealing of the structure at 200 °C, the traps were partly transformed and a mid-gap level ΔW = 0.49 eV was detected. FTIR and AFM measurements confirmed presence of HfO2 monoclinic phase in the HfO2 films. On the other side, the density of interface defect states of the structure decreased from approx. 1012 eV-1 cm-2 to 1011 eV-1 cm-2 after low temperature annealing of the reference structure. The results are compared with very similar (almost identical) development of interface defect states on the very thin thermal SiO2/Si structure before and after passivation in a 0.1 M KCN methanol solution.PACS: 78.55.Qr; 78.66.Jg; 81.16.Pr; 85.40Ls

  15. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

    Science.gov (United States)

    Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

    2018-01-01

    Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

  16. Photoluminescence properties of Eu3+ doped HfO2 coatings formed by plasma electrolytic oxidation of hafnium

    Science.gov (United States)

    Stojadinović, Stevan; Tadić, Nenad; Ćirić, Aleksandar; Vasilić, Rastko

    2018-03-01

    Plasma electrolytic oxidation was used for synthesis of Eu3+ doped monoclinic HfO2 coatings on hafnium substrate. Results of photoluminescence (PL) measurements show the existence of two distinct regions: one that is related to the blue emission originating from oxygen vacancy defects in HfO2 and the other one characterized with a series of sharp orange-red emission peaks related to f-f transitions of Eu3+ from excited level 5D0 to lower levels 7FJ (J = 0, 1, 2, 3, and 4). PL peaks appearing in excitation spectra of obtained coatings are attributed either to charge transfer state of Eu3+ or to direct excitation of the Eu3+ ground state 7F0 into higher levels of the 4f-manifold. PL of formed coatings increases with PEO time due to an increase of oxygen vacancy defects and the content of Eu3+. Acquired experimental data suggest that hypersensitive electrical dipole transition is much more intense than the magnetic dipole transition, indicating that Eu3+ ions occupy a non-inversion symmetry sites.

  17. High temperature X-ray diffraction studies on HfO2-Gd2O3 system

    International Nuclear Information System (INIS)

    Panneerselvam, G.; Antony, M.P.; Ananthasivan, K.; Joseph, M.

    2016-01-01

    High temperature X-ray diffraction (HTXRD) technique is an important experimental tool for measuring thermal expansion of materials of interest. A series of solid solutions containing GdO 1.5 in HfO 2 ,Hf 1-y Gd y )O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out by using room temperature X-ray diffraction measurements. The room temperature lattice parameter estimated for (Hf 1-y Gd y )O 2 (y=0.15, 0.2, 0.3, 0.41 and 0.505) are 0.51714 nm, 0.51929 nm, 0.52359nm, 0.52789nm and 0.53241 nm, respectively. Thermal expansion coefficients and percentage linear thermal expansion of the HfO 2 -Gd 2 O 3 solid solutions containing 20 and 41 mol% GdO 1.5 were determined using HTXRD in the temperature range 298 to 1673K. The mean linear thermal expansion coefficients of the solid solutions containing 20 and 41 mol. %Gd are 11.65 x 10 -6 K -1 and 12.07 x 10 -6 K -1 , respectively. (author)

  18. High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers

    Science.gov (United States)

    Xu, W. C.; He, H. X.; Jing, X. S.; Wu, S. J.; Zhang, Z.; Gao, J. W.; Gao, X. S.; Zhou, G. F.; Lu, X. B.; Liu, J.-M.

    2017-08-01

    In this work, we fabricated a high performance flash-type organic nonvolatile memory transistor, which adopted polymer-electret poly(α-methylstyrene) (PαMS) and HfO2 films as hybrid charge trapping layer (CTL). Compared with a single HfO2 or PαMS CTL structure, the hybrid HfO2/PαMS CTL structure can provide enhanced charge trapping efficiency to increase the device operation speed and reduce the leakage current to boost the device reliability. The fabricated nonvolatile organic memory transistors with the hybrid CTL shows excellent electrical properties, including low operation voltage (8 V), high speed (erase cycles). The present work provides useful idea for the design of future low-power consumption and highly reliable organic nonvolatile memories.

  19. Comparative study of Laser induce damage of HfO2/SiO2 and TiO2/SiO2 mirrors at 1064 nm.

    Science.gov (United States)

    Jiao, Hongfei; Ding, Tao; Zhang, Qian

    2011-02-28

    A comparative study of laser induced damage of HfO2/SiO2 and TiO2/SiO2 mirrors at 1064 nm has been carried out. One TiO2/SiO2 mirror with absorption of 300 ppm and two HfO2/SiO2 mirrors with absorption of 40 and 4.5 ppm were fabricated using electron beam evaporation method. For r-on-1 test, all HfO2/SiO2 mirrors with low average absorption are above 150 J/cm2 at 10 ns. However, the TiO2/SiO2 mirrors with high average absorption are just 9.5 J/cm2, which are probably due to the rather high absorption and rather low band gap energy. Meanwhile, all the samples were irradiated from front and back side respectively using the raster scan test mode. In case of front side irradiation, it is found that: for TiO2/SiO2 high reflectors, the representative damage morphologies are shallow pits that were probably caused by absorbing centers. However, for HfO2/SiO2 high reflectors, the dominant damage morphologies are micrometer-sized nodules ejected pits and the delamination initiating from the pits. The absorption of HfO2/SiO2 coatings is low enough to have minor influence on the laser damage resistance. In case of backside irradiation, the morphology of TiO2/SiO2 mirrors is mainly center melted pits that are thermal melting induced damage. Meanwhile, HfO2/SiO2 mirrors with isometrical fracture rings damage morphology are thermal induced stress damage.

  20. Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors

    Science.gov (United States)

    Ryan, J. T.; Lenahan, P. M.; Robertson, J.; Bersuker, G.

    2008-03-01

    We show that a Si /HfO2 interfacial layer defect with an electron spin resonance spectrum similar to that of some E' center variants responds to oxide bias consistent with an amphoteric defect. The spectrum is weakly orientation dependent indicating that the defect does not reside in a completely amorphous matrix. The defect's spin lattice relaxation time is much shorter than that of conventional E' centers suggesting that the defect involves some coupling of a Hf atom to a nearby oxygen deficient silicon dangling bond defect. This defect very likely plays an important role in widely reported instabilities in HfO2 based transistors.

  1. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    Directory of Open Access Journals (Sweden)

    Laura B. Ruppalt

    2014-12-01

    Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  2. Interface band alignment in high-k gate stacks

    Science.gov (United States)

    Eric, Bersch; Hartlieb, P.

    2005-03-01

    In order to successfully implement alternate high-K dielectric materials into MOS structures, the interface properties of MOS gate stacks must be better understood. Dipoles that may form at the metal/dielectric and dielectric/semiconductor interfaces make the band offsets difficult to predict. We have measured the conduction and valence band densities of states for a variety MOS stacks using in situ using inverse photoemission (IPE) and photoemission spectroscopy (PES), respectively. Results obtained from clean and metallized (with Ru or Al) HfO2/Si, SiO2/Si and mixed silicate films will be presented. IPE indicates a shift of the conduction band minimum (CBM) to higher energy (i.e. away from EF) with increasing SiO2. The effect of metallization on the location of band edges depends upon the metal species. The addition of N to the dielectrics shifts the CBM in a way that is thickness dependent. Possible mechanisms for these observed effects will be discussed.

  3. Memory characteristics of cobalt-silicide nanocrystals embedded in HfO2 gate oxide for nonvolatile nanocrystal flash devices

    Science.gov (United States)

    Kim, JooHyung; Yang, JungYup; Lee, JunSeok; Hong, JinPyo

    2008-01-01

    Cobalt-silicide (CoSi2) nanocrystals (NCs) were investigated for use in charge storage for metal oxide semiconductor (MOS) devices with thin HfO2 tunneling and control oxide layers. CoSi2 NCs were synthesized by exposure of Co /Si/HfO2 tunneling oxide/Si stacks to an external UV laser. Observations from transmission electron microscopy and x-ray photoelectron spectroscopy clearly confirm the formation of CoSi2 NCs and the values of Co-Si bonding energies that are shifted 0.3eV from original values, respectively. The CoSi2 NCs in MOS devices exhibited a large memory window of 3.4V as well as efficient programming/erasing speeds, good retention, and endurance times.

  4. A facile one-step hydrothermal synthesis of HfO2/graphene nanocomposite and its physio-chemical properties

    Science.gov (United States)

    Sagadevan, Suresh; Zaman Chowdhury, Zaira; Johan, Mohd. Rafie Bin; Rafique, Rahman F.

    2018-03-01

    A facile one-step hydrothermal synthesis of Hafnium oxide/Graphene (HfO2/Gr) Nanocomposite was successfully synthesized. The crystallinity index and the overall phase transformation process during the synthesis process was observed using x-ray diffraction (XRD) pattern. The surface morphology of the prepared composite was analyzed using Scanning electron microscopy (SEM). Transmission electron microscopy studies (HR-TEM) were conducted to measure the particle sizes. The presence of different types of functional groups was confirmed using FT Raman spectroscopy. UV–Visible spectrum analysis with optical ingestion was conducted to observe the optical properties of the prepared sample. The dielectric properties and conductivity of the prepared sample were investigated whereby the frequencies and the temperatures were altered. The results showed that both the phenomenon of the dielectric consistent and the dielectric loss were frequency and temperature dependent. The thermal conductivity behavior of the prepared samples was checked by calculating AC conductivity values at various temperatures.

  5. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    Science.gov (United States)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  6. Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers

    Science.gov (United States)

    Lee, Hyo Jun; Lee, Dong Uk; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju

    2011-06-01

    Nanocrystal-floating gate capacitors with WSi2 nanocrystals and high-k tunnel layers were fabricated to improve the electrical properties such as retention, programming/erasing speed, and endurance. The WSi2 nanocrystals were distributed uniformly between the tunnel and control gate oxide layers. The electrical performance of the tunnel barrier with the SiO2/HfO2/Al2O3 (2/1/3 nm) (OHA) tunnel layer appeared to be better than that with the Al2O3/HfO2/Al2O3 (2/1/3 nm) (AHA) tunnel layer. When ΔVFB is about 1 V after applying voltage at ±8 V, the programming/erasing speeds of AHA and OHA tunnel layers are 300 ms and 500 µs, respectively. In particular, the device with WSi2 nanocrystals and the OHA tunnel barrier showed a large memory window of about 7.76 V when the voltage swept from 10 to -10 V, and it was maintained at about 2.77 V after 104 cycles.

  7. Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2Atomic Layer Deposition.

    Science.gov (United States)

    Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

    2017-02-01

    Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al 2 O 3 , TiO 2 , ZnO, HfO 2 , and ZrO 2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al 2 O 3 or HfO 2 provided the highest level of initial corrosion protection, but films of HfO 2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO 2 or ZrO 2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

  8. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    Directory of Open Access Journals (Sweden)

    Molina-Aldareguia Jon

    2011-01-01

    Full Text Available Abstract Nanostructuring of ultrathin HfO2 films deposited on GaAs (001 substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea

  9. The influence of thermal treatment on the phase development in HfO2-Al2O3 and ZrO2-Al2O3 systems

    International Nuclear Information System (INIS)

    Stefanic, G.; Music, S.; Trojko, R.

    2005-01-01

    Amorphous precursors of HfO 2 -AlO 1.5 and ZrO 2 -AlO 1.5 systems covering the whole concentration range were co-precipitated from aqueous solutions of the corresponding salts. The thermal behaviour of the amorphous precursors was examined by differential thermal analysis, X-ray powder diffraction (XRD), laser Raman spectroscopy and scanning electron microscopy. The crystallization temperature of both systems increased with increase in the AlO 1.5 content, from 530 to 940 deg. C in the HfO 2 -AlO 1.5 system, and from 405 to 915 deg. C in the ZrO 2 -AlO 1.5 system. The results of phase analysis indicate an extended capability for the incorporation of Al 3+ ions in the metastable HfO 2 - and ZrO 2 -type solid solutions obtained after crystallization of amorphous co-gels. Precise determination of lattice parameters, performed using whole-powder-pattern decomposition method, showed that the axial ratio c f /a f in the ZrO 2 - and HfO 2 -type solid solutions with 10 mol% or more of Al 3+ approach 1. The tetragonal symmetry of these samples, as determined by laser Raman spectroscopy, was attributed to the displacement of the oxygen sublattice from the ideal fluorite positions. It was found that the lattice parameters of the ZrO 2 -type solid solutions decreased with increasing Al 3+ content up to ∼10 mol%, whereas above 10 mol%, further increase of the Al 3+ content has very small influence on the unit-cell volume of both HfO 2 - and ZrO 2 -type solid solutions. The reason for such behaviour was discussed. The solubility of Hf 4+ and Zr 4+ ions in the aluminium oxides lattice appeared to be negligible

  10. Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system

    Science.gov (United States)

    Mazur, M.; Poniedziałek, A.; Kaczmarek, D.; Wojcieszak, D.; Domaradzki, J.; Gibson, D.

    2017-11-01

    In this work the properties of hafnium dioxide (HfO2), titanium dioxide (TiO2) and mixed HfO2-TiO2 thin films with various amount of titanium addition, deposited by magnetron sputtering were described. Structural, surface, optical and mechanical properties of deposited coatings were analyzed. Based on X-ray diffraction and Raman scattering measuremets it was observed that there was a significant influence of titanium concentration in mixed TiO2-HfO2 thin films on their microstructure. Increase of Ti content in prepared mixed oxides coatings caused, e.g. a decrease of average crystallite size and amorphisation of the coatings. As-deposited hafnia and titania thin films exhibited nanocrystalline structure of monoclinic phase and mixed anatase-rutile phase for HfO2 and TiO2 thin films, respectively. Atomic force microscopy investigations showed that the surface of deposited thin films was densely packed, crack-free and composed of visible grains. Surface roughness and the value of water contact angle decreased with the increase of Ti content in mixed oxides. Results of optical studies showed that all deposited thin films were well transparent in a visible light range. The effect of the change of material composition on the cut-off wavelength, refractive index and packing density was also investigated. Performed measurements of mechanical properties revealed that hardness and Young's elastic modulus of thin films were dependent on material composition. Hardness of thin films increased with an increase of Ti content in thin films, from 4.90 GPa to 13.7 GPa for HfO2 and TiO2, respectively. The results of the scratch resistance showed that thin films with proper material composition can be used as protective coatings in optical devices.

  11. Study of HfO2/SiO2 dichroic laser mirrors with refractive index inhomogeneity.

    Science.gov (United States)

    Jiao, Hongfei; Cheng, Xinbin; Bao, Ganghua; Han, Jin; Zhang, Jinlong; Wang, Zhanshan; Trubetskov, M; Tikhonravov, Alexander V

    2014-02-01

    HfO2/SiO2 dichroic mirrors, having high reflectance at 1064 nm and high transmittance at 532 nm, play an important role in high-power laser systems. However, the half-wave hole effect, caused mainly by the refractive index inhomogeneity of hafnia, affects the spectra and application of these mirrors. Two approaches to eliminate the half-wave hole effect have been proposed. Both approaches attempt to shift the location of the half-wave hole in comparison with the original wavelength. One approach broadens the reflectance band of the first harmonic wavelength and simultaneously adjusts the central reflectance band to a longer wavelength, whereas the other approach combines the two stacks to adjust the location of the half-wave hole far away from the wavelength of interest. Two kinds of dichroic mirrors have been successfully fabricated; moreover, it was found that the method of a two-stack combination, 0.9(HL)8 and 1.1(HL)8, provides designs that can be fabricated more easily and with better quality spectral characteristics.

  12. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    Science.gov (United States)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  13. Effect of annealing on structural changes and oxygen diffusion in amorphous HfO2 using classical molecular dynamics

    Science.gov (United States)

    Shen, Wenqing; Kumari, Niru; Gibson, Gary; Jeon, Yoocharn; Henze, Dick; Silverthorn, Sarah; Bash, Cullen; Kumar, Satish

    2018-02-01

    Non-volatile memory is a promising alternative to present memory technologies. Oxygen vacancy diffusion has been widely accepted as one of the reasons for the resistive switching mechanism of transition-metal-oxide based resistive random access memory. In this study, molecular dynamics simulation is applied to investigate the diffusion coefficient and activation energy of oxygen in amorphous hafnia. Two sets of empirical potential, Charge-Optimized Many-Body (COMB) and Morse-BKS (MBKS), were considered to investigate the structural and diffusion properties at different temperatures. COMB predicts the activation energy of 0.53 eV for the temperature range of 1000-2000 K, while MBKS predicts 2.2 eV at high temperature (1600-2000 K) and 0.36 eV at low temperature (1000-1600 K). Structural changes and appearance of nano-crystalline phases with increasing temperature might affect the activation energy of oxygen diffusion predicted by MBKS, which is evident from the change in coordination number distribution and radial distribution function. None of the potentials make predictions that are fully consistent with density functional theory simulations of both the structure and diffusion properties of HfO2. This suggests the necessity of developing a better multi-body potential that considers charge exchange.

  14. Ball milling induced solid-state reactions in the La2O3-HfO2 ceramic system

    International Nuclear Information System (INIS)

    Chain, C.Y.; Quille, R.A.; Pasquevich, A.F.

    2010-01-01

    Ball milling of oxide blends can result in the formation of solid solutions depending on the characteristics of the oxides. In this paper the possibility of doping oxides with radioactive 181 Hf through the formation of these solutions is analyzed. The 181 Hf isotope decays to 181 Ta, which is an adequate probe for perturbed angular correlations (PAC) studies. Through the measurement of the hyperfine interactions of 181 Ta nuclei it is possible to determine the atomic distribution around the probes. We have thus studied the behavior of the La 2 O 3 -HfO 2 ceramic system subjected to high-energy ball milling. An oxide blend, containing few atomic percent of hafnium oxide, was milled during several hours resulting in the formation of hafnium oxide defective phases. The sample was finally annealed at high temperatures in order to facilitate the formation of solid solutions. This thermal treatment produced a solid-state reaction given place to Hf 2 La 2 O 7 pyrochlore and also the apparition of another phase or compound. The possibility of associating this last finding with a stabilized cubic phase of hafnium oxide resulting from lanthanum doping is analyzed.

  15. Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

    Science.gov (United States)

    Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

    2018-03-01

    In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

  16. Ab initio study of mechanical and thermo-acoustic properties of tough ceramics: applications to HfO2 in its cubic and orthorhombic phase

    International Nuclear Information System (INIS)

    Ponce, C A; Casali, R A; Caravaca, M A

    2008-01-01

    By means of the ab initio all-electron new full-potential linear-muffin-tin orbitals method, calculations were made for elastic constants C 11 , C 12 and C 44 for Si, ZrO 2 and HfO 2 in their cubic phase, and constants C 11 , C 22 , C 33 , C 12 , C 13 , C 23 , C 44 , C 55 and C 66 for HfO 2 in its orthorhombic phase. Using the Voigt and Reuss theory, estimations were made for polycrystals of their bulk, shear and Young moduli, and Poisson coefficients. The speed of elastic wave propagations and Debye temperatures were estimated for polycrystals built from Si and the above mentioned compounds. The semicore 4f 14 electrons should be included in the valence set of Hf atom in this all-electron approach if accurate results for elastic properties under pressures are looked for

  17. Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

    Directory of Open Access Journals (Sweden)

    Atan N.

    2016-01-01

    Full Text Available Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method’s practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source–drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO2/TiSi2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations and noise factors were evaluated by examining the Taguchi’s signal-to-noise ratio (SNR and nominal-the-best for the threshold voltage (VTH. After optimization, the result showed that the VTH value of the 18-nm PMOS device was -0.291339.

  18. Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

    Science.gov (United States)

    Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

    2014-06-01

    The electrical characterization of HfO2/ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO2/ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  19. Ab initio localized basis set study of structural parameters and elastic properties of HfO2 polymorphs

    International Nuclear Information System (INIS)

    Caravaca, M A; Casali, R A

    2005-01-01

    The SIESTA approach based on pseudopotentials and a localized basis set is used to calculate the electronic, elastic and equilibrium properties of P 2 1 /c, Pbca, Pnma, Fm3m, P4 2 nmc and Pa3 phases of HfO 2 . Using separable Troullier-Martins norm-conserving pseudopotentials which include partial core corrections for Hf, we tested important physical properties as a function of the basis set size, grid size and cut-off ratio of the pseudo-atomic orbitals (PAOs). We found that calculations in this oxide with the LDA approach and using a minimal basis set (simple zeta, SZ) improve calculated phase transition pressures with respect to the double-zeta basis set and LDA (DZ-LDA), and show similar accuracy to that determined with the PPPW and GGA approach. Still, the equilibrium volumes and structural properties calculated with SZ-LDA compare better with experiments than the GGA approach. The bandgaps and elastic and structural properties calculated with DZ-LDA are accurate in agreement with previous state of the art ab initio calculations and experimental evidence and cannot be improved with a polarized basis set. These calculated properties show low sensitivity to the PAO localization parameter range between 40 and 100 meV. However, this is not true for the relative energy, which improves upon decrease of the mentioned parameter. We found a non-linear behaviour in the lattice parameters with pressure in the P 2 1 /c phase, showing a discontinuity of the derivative of the a lattice parameter with respect to external pressure, as found in experiments. The common enthalpy values calculated with the minimal basis set give pressure transitions of 3.3 and 10.8?GPa for P2 1 /c → Pbca and Pbca → Pnma, respectively, in accordance with different high pressure experimental values

  20. Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

    Science.gov (United States)

    Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Lim, Donghwan; Han, Hoonhee; Chae, Myeong Gyoon; Lee, Jaeho; Ha, Beom Gil; Choi, Changhwan

    2018-03-01

    We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO2-x thin films by reducing oxidant pulse time (0.7 s-0.1 s) and study its effect on resistive switching behavior with a Ti/HfO2-x/Pt structure. Hf 4f spectra of x-ray photoelectron microscopy (XPS) and depth profile confirm varied oxygen vacancies profiles by shifts of binding energies of Hf 4f5/2 and Hf 4f7/2 main peaks and its according HfO2-x sub-oxides for each device. The ultraviolet photoelectron spectroscopy (UPS) confirms different electron affinity (χ) of HfO2 and HfO2-x thin films, implying that barrier height at Ti/oxide interface is reduced. Current transport mechanism is dictated by Ohmic conduction in fully oxidized HfO2 thin films - Device A (0.7 s) and by Trap Filled Space Charge Limited Conduction (TF-SCLC) in less oxidized HfO2-x thin films - Device B (0.3 s) and Device C (0.1 s). A switching mechanism related to the oxygen vacancies modulation in Ti/HfO2-x/Pt based resistive random access memory (RRAM) devices is used to explain carefully notified current transport mechanism variations from device-to-device. A proper endurance and long-time retention characteristics of the devices are also obtained.

  1. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.

    Science.gov (United States)

    Wang, Lai-Guo; Qian, Xu; Cao, Yan-Qiang; Cao, Zheng-Yi; Fang, Guo-Yong; Li, Ai-Dong; Wu, Di

    2015-01-01

    We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

  2. Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications

    International Nuclear Information System (INIS)

    Nichau, Alexander

    2013-01-01

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO 3 and HfO 2 are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO 3 and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO 3 is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO 3 on germanium, germanate formation is shown. LaLuO 3 is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO 3 in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO 3 and HfO 2 . Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO 2 gate stacks is scalable below 1 nm by the use of thinned interfacial SiO 2 . The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the gate electrode to decrease the EOT of HfO 2 gate stacks. A lower limit found was EOT=5 Aa for Al doping inside TiN. The doping of TiN on LaLuO 3 is proven by electron energy loss spectroscopy (EELS) studies to modify the interfacial silicate layer to La-rich silicates or even reduce the layer. The oxide quality in Si/HfO 2 /TiN gate stacks is characterized by charge pumping and carrier mobility measurements on 3d MOSFETs a.k.a. FinFETs. The oxide quality in terms of the number of interface (and oxide) traps on top- and sidewall of FinFETs is compared for three different annealing processes. A high temperature anneal of HfO 2 improves significantly the oxide quality and mobility. The gate oxide integrity (GOI) of gate stacks below 1 nm EOT is determined by time-dependent dielectric breakdown (TDDB) measurements on FinFETs with HfO 2 /TiN gate stacks. A successful EOT scaling has always to consider the oxide quality and resulting reliability. Degraded oxide quality leads to mobility degradation and earlier soft-breakdown, i.e. leakage current increase.

  3. On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

    International Nuclear Information System (INIS)

    Saadi, M.; Gonon, P.; Vallée, C.; Mannequin, C.; Bsiesy, A.; Grampeix, H.; Jalaguier, E.; Jomni, F.

    2016-01-01

    Resistance switching is studied in HfO 2 as a function of the anode metal (Au, Cu, and Ag) in view of its application to resistive memories (resistive random access memories, RRAM). Current-voltage (I-V) and current-time (I-t) characteristics are presented. For Au anodes, resistance transition is controlled by oxygen vacancies (oxygen-based resistive random access memory, OxRRAM). For Ag anodes, resistance switching is governed by cation injection (Conducting Bridge random access memory, CBRAM). Cu anodes lead to an intermediate case. I-t experiments are shown to be a valuable tool to distinguish between OxRRAM and CBRAM behaviors. A model is proposed to explain the high-to-low resistance transition in CBRAMs. The model is based on the theory of low-temperature oxidation of metals (Cabrera-Mott theory). Upon electron injection, oxygen vacancies and oxygen ions are generated in the oxide. Oxygen ions are drifted to the anode, and an interfacial oxide is formed at the HfO 2 /anode interface. If oxygen ion mobility is low in the interfacial oxide, a negative space charge builds-up at the HfO 2 /oxide interface. This negative space charge is the source of a strong electric field across the interfacial oxide thickness, which pulls out cations from the anode (CBRAM case). Inversely, if oxygen ions migration through the interfacial oxide is important (or if the anode does not oxidize such as Au), bulk oxygen vacancies govern resistance transition (OxRRAM case).

  4. Hyperfine interaction study in RCoO3 (R = Gd and Tb) and HfO2 thin film oxides by perturbed angular correlation technique

    International Nuclear Information System (INIS)

    Cavalcante, Fabio Henrique de Moraes

    2009-01-01

    In the present work, the Perturbed Angular Gamma-Gamma Correlation technique (PAC) was used to measure the Electric Field Gradient (EFG) in two oxide systems: RCoO 3 (R = Gd, Tb) perovskite oxide and HfO 2 in order to study the behavior of the EFG as a function of temperature. Electric quadrupole hyperfine interaction measurements were carried out using 111 In → 111 Cd and 181 Hf → 181 Ta radioactive probe nuclei. The samples were prepared through a chemical route known as Sol-Gel technique and analyzed with x-ray diffraction. Both nuclei were introduced in to the perovskite samples during the chemical procedure. The thin films were provided by the Laboratory of Hyperfine Interactions at the University of 181 Hf Lisbon and the probe nuclei was activated by the irradiation of the thin film in the reactor of IPEN IEA-R1 at an appropriate time regarding the thickness of the film. The measurements were taken in the temperature range from 4 K to 1560 K. The results for the perovskite oxides measurements show a site-dependence of the EFG with probe-nuclei occupation and a temperature dependence of EFG that can be explained if spins transitions in Co are considered. The results of EFG measurements in the 25 nm thin film of HfO 2 show a second fraction besides that corresponding to bulk. (author)

  5. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  6. The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO2

    Science.gov (United States)

    Materlik, Robin; Künneth, Christopher; Mikolajick, Thomas; Kersch, Alfred

    2017-08-01

    Different dopants with their specific dopant concentration can be utilized to produce ferroelectric HfO2 thin films. In this work, it is explored for Sr in a comprehensive first-principles study. Density functional calculations reveal structure, formation energy, and total energy of the Sr related defects in HfO2. We found the charge compensated defect with an associated oxygen vacancy SrHfVO to strongly favour the non-ferroelectric, tetragonal P42/mnc phase energetically. In contrast, the uncompensated defect without oxygen vacancy SrHf favours the ferroelectric, orthorhombic Pca21 phase. According to the formation energy, the uncompensated defect can form easily under oxygen rich conditions in the production process. Low oxygen partial pressure existing over the lifetime promotes the loss of oxygen leading to VO, and thus, the destabilization of the ferroelectric, orthorhombic Pca21 phase is accompanied by an increase of the leakage current. This study attempts to fundamentally explain the stabilization of the ferroelectric, orthorhombic Pca21 phase by doping.

  7. Annealing effects on microstructure and laser-induced damage threshold of HfO2/SiO2 multilayer mirrors.

    Science.gov (United States)

    Jena, Shuvendu; Tokas, Raj Bahadur; Rao, K Divakar; Thakur, Sudhakar; Sahoo, Naba Kishore

    2016-08-01

    HfO2/SiO2 periodic multilayer high reflection mirrors have been prepared by a reactive electron-beam evaporation technique. The deposited mirrors were annealed in the temperature range from 300°C to 500°C. The effects of annealing on optical, microstructural, and laser-induced damage characteristics of the mirrors have been investigated. The high reflection band of the mirror shifts toward a shorter wavelength with increasing annealing temperature. As-deposited and annealed mirrors show polycrystalline structure with a monoclinic phase of HfO2. Crystalinity and grain size increase upon annealing. The laser-induced damage threshold (LIDT) has been assessed using a 532 nm pulsed laser at a pulse width of 7 ns. The LIDT value of the multilayer mirror increases from 44.1  J/cm2 to 77.6  J/cm2 with annealing up to 400°C. The improvement of LIDT with annealing is explained through oxygen vacancy defects as well as grain-size-dependent thermal conductivity. Finally, the observed laser damage morphology, such as circular scalds and ablated multilayer stacks with terrace structure, are analyzed.

  8. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

    Science.gov (United States)

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Priya, Shashank

    2015-02-16

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10(6) s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

  9. Laser conditioning and multi-shot laser damage accumulation effects of HfO2/SiO2 antireflective coatings

    International Nuclear Information System (INIS)

    Zhao Yuanan; Wang Tao; Zhang Dawei; Shao Jianda; Fan Zhengxiu

    2005-01-01

    Laser conditioning effects of the HfO 2 /SiO 2 antireflective (AR) coatings at 1064 nm and the accumulation effects of multi-shot laser radiation were investigated. The HfO 2 /SiO 2 AR coatings were prepared by E-beam evaporation (EBE). The single-shot and multi-shot laser induced damage threshold was detected following ISO standard 11254-1.2, and the laser conditioning was conducted by three-step raster scanning method. It was found that the single-shot LIDT and multi-shot LIDT was almost the same. The damage mostly >80% occurred in the first shot under multi-shot laser radiation, and after that the damage occurring probability plummeted to <5%. There was no obvious enhancement of the laser damage resistance for both the single-shot and multi-shot laser radiation of the AR coatings after laser conditioning. A Nomarski microscope was employed to map the damage morphology, and it found that the damage behavior is defect-initiated for both unconditioned and conditioned samples

  10. Formation of hafnium sulfates with potassium and ammonium in the HfO2-H2SO4-Me2SO4-H2O systems

    International Nuclear Information System (INIS)

    Sozinova, Yu.P.; Motov, D.L.

    1978-01-01

    The formation of double hafnium sulfates with potassium and ammonium has been studied by the method of isothermal solubility at 60 deg C. In systems with potassium double hafnium salts have been obtained for the first time for which the ratio between the components is HfO 2 :H 2 SO 4 :K 2 SO 4 :H 2 O=2:2:1:3, 1:1:1:3, and 1:2:1:0.5. In the system with ammonia double salts have been obtained with the ratio between the components HfO 2 :H 2 SO 4 :(NH 4 )SO 4 :H 2 O=2:1:1:1, 2:3:1:-1, 1:2:1:0, and 1:2:2:2. In contrast to potassium salts, solubility of ammonium salts depends to a greater extent on the solution acidity, and to a lesser extent on the content of (NH 4 ) 2 SO 4 . The transition of simple sulfates into double in the system with (NH 4 ) 2 SO 4 takes place at a high content of (NH 4 ) 2 SO 4 in the solution (about 10 mass.%), whereas in the presence of potassium double salts are formed at about 3.5% of K 2 SO 4 in the solution

  11. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  12. ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

    Science.gov (United States)

    Babadi, Aein S.; Lind, Erik; Wernersson, Lars-Erik

    2016-03-01

    The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 1012 cm-2 eV-1 and 4 × 1012 cm-2 eV-1 for ZrO2 and HfO2, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C-V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.

  13. Resistive switching of Sn-doped In2O3/HfO2core-shell nanowire: geometry architecture engineering for nonvolatile memory.

    Science.gov (United States)

    Huang, Chi-Hsin; Chang, Wen-Chih; Huang, Jian-Shiou; Lin, Shih-Ming; Chueh, Yu-Lun

    2017-05-25

    Core-shell NWs offer an innovative approach to achieve nanoscale metal-insulator-metal (MIM) heterostructures along the wire radial direction, realizing three-dimensional geometry architecture rather than planar type thin film devices. This work demonstrated the tunable resistive switching characteristics of ITO/HfO 2 core-shell nanowires with controllable shell thicknesses by the atomic layer deposition (ALD) process for the first time. Compared to planar HfO 2 thin film device configuration, ITO/HfO 2 core-shell nanowire shows a prominent resistive memory behavior, including lower power consumption with a smaller SET voltage of ∼0.6 V and better switching voltage uniformity with variations (standard deviation(σ)/mean value (μ)) of V SET and V RESET from 0.38 to 0.14 and from 0.33 to 0.05 for ITO/HfO 2 core-shell nanowire and planar HfO 2 thin film, respectively. In addition, endurance over 10 3 cycles resulting from the local electric field enhancement can be achieved, which is attributed to geometry architecture engineering. The concept of geometry architecture engineering provides a promising strategy to modify the electric-field distribution for solving the non-uniformity issue of future RRAM.

  14. Impact of Band-Engineering to Performance of High-k Multilayer Based Charge Trapping Memory

    International Nuclear Information System (INIS)

    Liu Li-Fang; Pan Li-Yang; Zhang Zhi-Gang; Xu Jun

    2015-01-01

    Impact of band-engineering to the performance of charge trapping memory with HfO 2 /Ta 2 O 5 /HfO 2 (HTH) as the charge trapping layer is investigated. Compared with devices with the same total HfO 2 thickness, structures with Ta 2 O 5 closer to substrates show larger program/erase window, because the 2nd HfO 2 (next to blocking oxide) serving as part of blocking oxide reduces the current tunneling out of/in the charge trapping layer during program and erase. Moreover, trapped charge centroid is modulated and contributed more to the flat-band voltage shift. Further experiments prove that devices with a thicker 2nd HfO 2 layer exhibit larger saturate flat-band shift in both program and erase operation. The optimized device achieves a 7 V memory window and good reliability characteristics. (paper)

  15. Effect of Gd2O3 doping on structure and boron volatility of borosilicate glass sealants in solid oxide fuel cells-A study on the La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode

    Science.gov (United States)

    Zhang, Qi; Tan, Shengwei; Ren, Mengyuan; Yang, Hsiwen; Tang, Dian; Chen, Kongfa; Zhang, Teng; Jiang, San Ping

    2018-04-01

    Boron volatility is one of the most important properties of borosilicate-based glass sealants in solid oxide fuel cells (SOFCs), as boron contaminants react with lanthanum-containing cathodes, forming LaBO3 and degrading the activity of SOFCs. Here, we report that the reaction between the volatile boron and a La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode during polarization can be significantly reduced by doping aluminoborosilicate glass with Gd2O3. Specifically, the Gd cations in glass with 2 mol.% Gd2O3 dissolve preferentially in the borate-rich environment to form more Gd-metaborate structures and promote the formation of calcium metaborate (CaB2O4); they also condense the B-O network after heat treatment, which suppresses poisoning by boron contaminants on the LSCF cathode. The results provide insights into design and development of a reliable sealing glass for SOFC applications.

  16. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors

    Science.gov (United States)

    Suri, Rahul

    The purpose of this research work was to investigate the surface passivation methods and metal gate/high-k dielectric gate stacks for metal-oxide-semiconductor devices (MOS) on III-V compound semiconductor materials -- (i) GaAs for future high-speed low-power logic devices and (ii) AlGaN/GaN heterostructure for future high-speed high-power devices. GaAs is a candidate material for high-mobility channel in a NMOS transistor to extend the CMOS scaling up to and beyond the 16-nm technology node. AlGaN/GaN heterostructure is useful in a MOS-high electron mobility transistor (MOS-HEMT) device for providing a high current-carrying two dimensional electron gas (2DEG) channel. The interaction of GaAs surface with atomic layer deposition of high- k dielectrics was investigated to gain fundamental insights into the chemical properties of GaAs surface oxides and high-k/GaAs interface. Electrical characterization of devices was performed to understand the impact of high-k/GaAs interface on MOS device characteristics in order to form a suitable metal/high-k/GaAs gatestack for future high-speed logic and power devices. Reduction of native oxides on GaAs was found to occur during atomic layer deposition (ALD) of high-k dielectrics- HfO2 and Al2O3/HfO 2 nanolaminates on GaAs. Reaction between ALD metal precursor and native oxides on GaAs was identified to be the cause for consumption of native oxides. It was established that the ALD growth temperature has a strong impact on this phenomenon. During post-dielectric annealing the residual arsenic oxides at the interface decomposed leading to an increase in the interfacial gallium oxides. Presence of gallium oxide, Ga2O3 was identified as a cause for observed frequency dispersion in MOS capacitance-voltage curves indicative of a high interface state density. The chemical properties of the AlGaN/GaN heterostructure surface prepared by wet chemical treatment using HCl/HF and NH4OH solutions were investigated and compared. Both HCl and

  17. Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density

    Science.gov (United States)

    Park, Jaehoo; Cho, Moonju; Kim, Seong Keun; Park, Tae Joo; Lee, Suk Woo; Hong, Sug Hun; Hwang, Cheol Seong

    2005-03-01

    The influence of the ozone concentration (160-370g/m3) during atomic layer deposition of HfO2-gate dielectrics on the dielectric performance of the films grown on Si was studied. Although ozone was effective in reducing the impurity concentration in the film compared to H2O, the higher concentration slightly deteriorated the dielectric performance. More importantly, the degradation in the interface trap property with increasing post-annealing temperature became more serious as the ozone concentration increased. Investigation of the interface states using x-ray photoelectron spectroscopy revealed that the excessive oxygen incorporated during the film growth made the interfacial sub-oxide species (SiO, Si2O3, and silicate) and SiO2 coordinate more with oxygen. This increased the interface trap density and degraded the interface properties.

  18. Carbon-coated ZnO mat passivation by atomic-layer-deposited HfO2as an anode material for lithium-ion batteries.

    Science.gov (United States)

    Jung, Mi-Hee

    2017-11-01

    ZnO has had little consideration as an anode material in lithium-ion batteries compared with other transition-metal oxides due to its inherent poor electrical conductivity and large volume expansion upon cycling and pulverization of ZnO-based electrodes. A logical design and facile synthesis of ZnO with well-controlled particle sizes and a specific morphology is essential to improving the performance of ZnO in lithium-ion batteries. In this paper, a simple approach is reported that uses a cation surfactant and a chelating agent to synthesize three-dimensional hierarchical nanostructured carbon-coated ZnO mats, in which the ZnO mats are composed of stacked individual ZnO nanowires and form well-defined nanoporous structures with high surface areas. In order to improve the performance of lithium-ion batteries, HfO 2 is deposited on the carbon-coated ZnO mat electrode via atomic layer deposition. Lithium-ion battery devices based on the carbon-coated ZnO mat passivation by atomic layer deposited HfO 2 exhibit an excellent initial discharge and charge capacities of 2684.01 and 963.21mAhg -1 , respectively, at a current density of 100mAg -1 in the voltage range of 0.01-3V. They also exhibit cycle stability after 125 cycles with a capacity of 740mAhg -1 and a remarkable rate capability. Copyright © 2017 Elsevier Inc. All rights reserved.

  19. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

    Directory of Open Access Journals (Sweden)

    H. Hussin

    2014-01-01

    Full Text Available We present a simulation study on negative bias temperature instability (NBTI induced hole trapping in E′ center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well as the resulting threshold voltage shift. By varying the physical thicknesses of the interface silicon dioxide (SiO2 and hafnium oxide (HfO2 layers, we investigate how the variation in thickness affects hole trapping/detrapping at different stress temperatures. The results suggest that the degradations are highly dependent on the physical gate stack parameters for a given stress voltage and temperature. The degradation is more pronounced by 5% when the thicknesses of HfO2 are increased but is reduced by 11% when the SiO2 interface layer thickness is increased during lower stress voltage. However, at higher stress voltage, greater degradation is observed for a thicker SiO2 interface layer. In addition, the existence of different stress temperatures at which the degradation behavior differs implies that the hole trapping/detrapping event is thermally activated.

  20. Silicon nanowires with high-k hafnium oxide dielectrics for sensitive detection of small nucleic acid oligomers.

    Science.gov (United States)

    Dorvel, Brian R; Reddy, Bobby; Go, Jonghyun; Duarte Guevara, Carlos; Salm, Eric; Alam, Muhammad Ashraful; Bashir, Rashid

    2012-07-24

    Nanobiosensors based on silicon nanowire field effect transistors offer advantages of low cost, label-free detection, and potential for massive parallelization. As a result, these sensors have often been suggested as an attractive option for applications in point-of-care (POC) medical diagnostics. Unfortunately, a number of performance issues, such as gate leakage and current instability due to fluid contact, have prevented widespread adoption of the technology for routine use. High-k dielectrics, such as hafnium oxide (HfO(2)), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. With these fundamental stability issues addressed, a promising target for POC diagnostics and SiNWFETs has been small oligonucleotides, more specifically, microRNA (miRNA). MicroRNAs are small RNA oligonucleotides which bind to mRNAs, causing translational repression of proteins, gene silencing, and expressions are typically altered in several forms of cancer. In this paper, we describe a process for fabricating stable HfO(2) dielectric-based silicon nanowires for biosensing applications. Here we demonstrate sensing of single-stranded DNA analogues to their microRNA cousins using miR-10b and miR-21 as templates, both known to be upregulated in breast cancer. We characterize the effect of surface functionalization on device performance using the miR-10b DNA analogue as the target sequence and different molecular weight poly-l-lysine as the functionalization layer. By optimizing the surface functionalization and fabrication protocol, we were able to achieve <100 fM detection levels of the miR-10b DNA analogue, with a theoretical limit of detection of 1 fM. Moreover, the noncomplementary DNA target strand, based on miR-21, showed very little response, indicating a highly sensitive and highly selective biosensing platform.

  1. Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

    Science.gov (United States)

    Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Chien Huang, Jui; Dee, Chang Fu; Yeop Majlis, Burhanuddin; Chang, Edward Yi

    2017-09-01

    A plasma enhanced atomic layer deposition (PEALD) HfO2/AlN dielectric stack was used as the gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) for high-frequency power device applications. The capacitance-voltage (C-V) curves of the HfO2/AlN/GaN MOS capacitor (MOSCAP) showed a small frequency dispersion along with a very small hysteresis (˜50 mV). Moreover, the interface trap density (D it) was calculated to be 2.7 × 1011 cm-2 V-1 s-1 at 150 °C. Using PEALD-AlN as the interfacial passivation layer (IPL), the drain current of the HfO2/AlN MOS-HEMTs increased by about 46% and the gate leakage current decreased by six orders of magnitude as compared with those of the conventional Schottky gate AlGaN/GaN HEMTs processed using the same epitaxial wafer. The 0.3-µm-gate-length HfO2/AlN/AlGaN/GaN MOS-HEMTs demonstrated a 2.88 W/mm output power, a 23 dB power gain, a 30.2% power-added efficiency at 2.4 GHz, and an improved device linearity as compared with the conventional AlGaN/GaN HEMTs. The third-order intercept point at the output (OIP3) of the MOS-HEMTs was 28.4 as compared with that of 26.5 for the conventional GaN HEMTs. Overall, the MOS-HEMTs with a HfO2/AlN gate stack showed good potential for high-linearity RF power device applications.

  2. Tunneling in high-K isomeric decays

    CERN Document Server

    Shizuma, T; Shimizu, Y R

    2002-01-01

    We have systematically investigated highly-K-forbidden transitions observed in the Hf, W and Os region, using the gamma-tunneling model in which low-K and high-k states interact through a process of quantum tunneling. The measured hindrance factors are compared with the values calculated using the gamma-tunneling model. Isotope dependences of gamma-tunneling probabilities particularly for neutron-rich nuclei and the relation to stimulated decays of isomers are discussed. (author)

  3. Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

    Science.gov (United States)

    Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

    2017-10-01

    We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE and the Japan Society of Applied Physics. Dr. Hiramoto is a fellow of Japan Society of Applied Physics and a member of IEEE and IEICE. He served as the General Chair of Silicon Nanoelectronics Workshop in 2003 and the Program Chair in 1997, 1999, and 2001. He was on Committee of IEDM from 2003 to 2009. He was the Program Chair of Symposium on VLSI Technology in 2013 and was the General Chair in 2015. He is the Program Chair of International Conference on Solid-State Devices and Materials (SSDM) in 2016.

  4. Studies of the hyperfine interaction in semiconducting or isolating oxides on the examples HfO2, Ga2O3, and Al2O3

    International Nuclear Information System (INIS)

    Steffens, Michael

    2014-01-01

    On the example of the three oxide compounds of the hafnium, gallium, and aluminium among others the method of the perturbed γ-γ angular correlation (PAC) was applied in dependence on the sample temperature. Applied were thereby the PAC probe nuclei 111 Cd and 181 Ga, which were inserted in the samples by ion implantation or proced by neutron activation in the samples. In HfO 2 thereby especially the hyperfine interaction of thin layers with thicknesses from 2.7 to 17 nm and 100 nm were studied. Strongly disagreeing field gradients and a great influence of the sample surface on the measurement are shown. It could be shown that ν qO x should scale with the layer thickness of the oxide and that the temperature-dependent behaviour, which is influenced by the thermal expansion of the lattice, underlies also this scaling. Conditioned by the neighbourhood to the surface at high temperature oxygen can escape from the samples and so degrade the oxide. The studied Ga 2 O 3 layers were produced by oxidation of GaN at 1223 K in air. The structure of the oxide layer was thereby stepwise pursued with the PAC and could be modelled with an exponential time dependence. The oxidation was repeated with several samples at equal absolute oxidation time but different partition in intermediate steps. Altogether the result were shown as reproducable, the occuring differences of the hyperfine interactions are probably given by external quantities fluctuating in the oxidation. The measurement of the Al 2 O 3 sample in the PAC furnace and cryostat represents mainly a reproduction of the preceding experiments of Penner et al. In this materials the attempt held the spotlight to manipulate the temperature-dependent behaviour of the hyperfine interaction by additional doping. Over the experiments of the single materials was set the more precise consideration of dynamic hyperfine interactions on the probe nucleus 111 Cd. In the spin-correlation functions R(t) these were manifested by an extraordinarily strong damping of the spectra by an additional interaction. In all three materials in could be shown, that these occur not on other proble nuclei like 181 Ta (HfO 2 ,Ga 2 O 3 ) or the EC-less decay on the 111m Cd( 111 Cd) (Al 2 O 3 ).

  5. Vaporization and thermodynamics of ceramics based on the La2O3-Y2O3-HfO2system studied by the high temperature mass spectrometric method.

    Science.gov (United States)

    Kablov, Eugene N; Stolyarova, Valentina L; Vorozhtcov, Viktor A; Lopatin, Sergey I; Fabrichnaya, Olga В; Ilatovskaya, Mariia O; Karachevtsev, Fedor N

    2018-02-27

    Materials based on the La 2 O 3 -Y 2 O 3 -HfO 2 system are promising for the production of highly refractory ceramics, e.g., thermal barrier coatings and molds for casting of elements of gas turbine engines. When these ceramics are synthesized or used at high temperatures, selective vaporization of components may take place, resulting in changes in the physicochemical The verties of the materials. Consequently, development of materials based on the La 2 O 3 -Y 2 O 3 -HfO 2 system requires information on vaporization in this system as well as on its thermodynamics, without which prediction and modeling of their physicochemical properties are impossible. Vaporization processes and thermodynamic properties in the La 2 O 3 -Y 2 O 3 -HfO 2 system were studied by the high temperature Knudsen effusion mass spectrometric method using a MS-1301 mass spectrometer. Electron ionization of vapor species was employed at an ionization energy of 25 eV. The samples under study and reference substances were vaporized from a tungsten twin effusion cell. At 2337 K the main vapor species over samples in the La 2 O 3 -Y 2 O 3 -HfO 2 system were shown to be LaO, YO and O. The partial pressures of the vapor species mentioned and the La 2 O 3 and Y 2 O 3 activities in the samples were obtained at 2337 K. The Gibbs energies of mixing and excess Gibbs energies were found in the solid solution of this system. Vaporization of ceramics based on the La 2 O 3 -Y 2 O 3 -HfO 2 system at 2337 K led to selective transition of La 2 O 3 and Y 2 O 3 to the gaseous phase, with the La 2 O 3 vaporization rate being higher than that of Y 2 O 3 . The directions of composition changes of samples due to their vaporization at 2337 K were determined. In the solid solution of this system negative deviations from ideal behavior were found. The ability to estimate the excess Gibbs energies in the solid solution of the La 2 O 3 -Y 2 O 3 -HfO 2 system by the Kohler method was shown. This article is protected by copyright. All rights reserved.

  6. On gate stack scalability of double-gate negative-capacitance FET with ferroelectric HfO2 for energy efficient sub-0.2 V operation

    Science.gov (United States)

    Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

    2018-02-01

    We have investigated the gate stack scalability and energy efficiency of double-gate negative-capacitance FET (DGNCFET) with a CMOS-compatible ferroelectric HfO2 (FE:HfO2). Analytic model-based simulation is conducted to investigate the impacts of ferroelectric characteristic of FE:HfO2 and gate stack thickness on the I on/I off ratio of DGNCFET. DGNCFET has wider design window for the gate stack where higher I on/I off ratio can be achieved than DG classical MOSFET. Under a process-induced constraint with sub-10 nm gate length (L g), FE:HfO2-based DGNCFET still has a design point for high I on/I off ratio. With an optimized gate stack thickness for sub-10 nm L g, FE:HfO2-based DGNCFET has 2.5× higher energy efficiency than DG classical MOSFET even at ultralow operation voltage of sub-0.2 V.

  7. Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics.

    Science.gov (United States)

    Park, Sukhyung; Cho, Kyoungah; Jung, Jungwoo; Kim, Sangsig

    2015-10-01

    In this study, we demonstrate the enhancement of the nonlinear resistive switching characteristics of HfO2-based resistive random access memory (ReRAM) devices by carrying out thermal annealing of Al2O3 tunnel barriers. The nonlinearity of ReRAM device with an annealed Al2O3 tunnel barrier is determined to be 10.1, which is larger than that of the ReRAM device with an as-deposited Al2O3 tunnel barrier. From the electrical characteristics of the ReRAM devices with as-deposited and annealed Al2O3 tunnel barriers, it reveals that there is a trade-off relationship between nonlinearity in low-resistance state (LRS) current and the ratio of the high-resistance state (HRS) and the LRS. The enhancement of nonlinearity is attributed to a change in the conduction mechanism in the LRS of the ReRAM after the annealing. While the conduction mechanism before the annealing follows Ohmic conduction, the conduction of the ReRAM after the annealing is controlled by a trap-controlled space charge limited conduction mechanism. Additionally, the annealing of the Al2O3 tunnel barriers is also shown to improve the endurance and retention characteristics.

  8. Fabrication of Metal Nanoparticle Arrays in the ZrO2(Y, HfO2(Y, and GeOx Films by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Oleg Gorshkov

    2017-01-01

    Full Text Available The single sheet arrays of Au nanoparticles (NPs embedded into the ZrO2(Y, HfO2(Y, and GeOx (x≈2 films have been fabricated by the alternating deposition of the nanometer-thick dielectric and metal films using Magnetron Sputtering followed by annealing. The structure and optical properties of the NP arrays have been studied, subject to the fabrication technology parameters. The possibility of fabricating dense single sheet Au NP arrays in the matrices listed above with controlled NP sizes (within 1 to 3 nm and surface density has been demonstrated. A red shift of the plasmonic optical absorption peak in the optical transmission spectra of the nanocomposite films (in the wavelength band of 500 to 650 nm has been observed. The effect was attributed to the excitation of the collective surface plasmon-polaritons in the dense Au NP arrays. The nanocomposite films fabricated in the present study can find various applications in nanoelectronics (e.g., single electronics, nonvolatile memory devices, integrated optics, and plasmonics.

  9. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

    Science.gov (United States)

    Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

    2018-01-01

    We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

  10. Mechanochemical synthesis and electrical conductivity of nanocrystalline delta-Bi2O3 stabilized by HfO2 and ZrO2

    Directory of Open Access Journals (Sweden)

    LJILJANA KARANOVIĆ

    2009-12-01

    Full Text Available A powder mixture of a-Bi2O3 and HfO2, in the molar ratio 2:3, was mechanochemically treated in a planetary ball mill under air, using zirconium oxide vials and balls as the milling medium. After 50 h of milling, the mechanochemical reaction led to the formation of a nanocrystalline a-Bi2O3 phase (fluorite-type solid solution Bi0.87Hf0.59Zr0.63O3.61, with a crystallite size of 20 nm. The mechanochemical reaction started at a very beginning of milling accompanied by an accumulation of ZrO2 arising from the milling tools. The samples prepared after various milling times were characterized by X-ray powder diffraction and DSC analysis. The electrical properties of the as-milled and pressed Bi0.87Hf0.59Zr0.63O3.61powder were studied using impedance spectroscopy in the temperature range from 100 to 700 °C under air. The electrical conductivity was determined to be 9.43×10-6 and 0.080 S cm-1 for the temperatures of 300 and 700 °C, respectively.

  11. The effect of a Ta oxygen scavenger layer on HfO2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport.

    Science.gov (United States)

    Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; Nakamura, Hisao; Asai, Yoshihiro; Heinonen, Olle

    2016-03-14

    Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer" between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces the Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high- and low-resistance states. Finally, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.

  12. Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

    Science.gov (United States)

    Pazos, S.; Aguirre, F.; Miranda, E.; Lombardo, S.; Palumbo, F.

    2017-03-01

    In this work, the breakdown transients of A l 2 O 3 - and HfO2-based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes were compared. Their connection with the thermal properties of the materials was investigated using alternative experimental setups. The differences and similarities between these transients in the fast and progressive breakdown regimes were assessed. According to the obtained results, A l 2 O 3 exhibits longer breakdown transients than HfO2 and requires a higher voltage to initiate a very fast current runaway across the dielectric film. This distinctive behavior is ascribed to the higher thermal conductivity of A l 2 O 3 . Overall results link the breakdown process to the thermal properties of the oxides under test rather than to dissipation effects occurring at the metal electrodes.

  13. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Directory of Open Access Journals (Sweden)

    Masaharu Kobayashi

    2016-02-01

    Full Text Available Internet-of-Things (IoT technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  14. Subthreshold swing improvement in MoS2transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2gate dielectric stack.

    Science.gov (United States)

    Nourbakhsh, Amirhasan; Zubair, Ahmad; Joglekar, Sameer; Dresselhaus, Mildred; Palacios, Tomás

    2017-05-11

    Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec -1 by exploiting the negative-capacitance (NC) effect in ferroelectric (FE) materials is a novel effective technique to allow the reduction of the supply voltage and power consumption in field effect transistors (FETs). At the same time, two-dimensional layered semiconductors, such as molybdenum disulfide (MoS 2 ), have been shown to be promising candidates to replace silicon MOSFETs in sub-5 nm-channel technology nodes. In this paper, we demonstrate NC MoS 2 FETs by incorporating a ferroelectric Al-doped HfO 2 (Al : HfO 2 ), a technologically compatible material, in the FET gate stack. Al : HfO 2 thin films were deposited on Si wafers by atomic layer deposition. Voltage amplification up to 1.25 times was observed in a FE bilayer stack of Al : HfO 2 /HfO 2 with a Ni metallic intermediate layer. The minimum SS (SS min ) of the NC-MoS 2 FET built on the FE bilayer improved to 57 mV dec -1 at room temperature, compared with SS min = 67 mV dec -1 for the MoS 2 FET with only HfO 2 as a gate dielectric.

  15. Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

    International Nuclear Information System (INIS)

    Yuan Lei; Zhao Yuanan; Wang Congjuan; He Hongbo; Fan Zhengxiu; Shao Jianda

    2007-01-01

    Two kinds of HfO 2 /SiO 2 800 nm high-reflective (HR) coatings, with and without SiO 2 protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO 2 protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO 2 protective layer for HfO 2 /SiO 2 HR coating with SiO 2 protective layer. The relation of LIDT for two kinds of HfO 2 /SiO 2 HR coatings in calculation agrees with the experiment result

  16. Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O 3/HfO 2 tunnel oxide.

    Science.gov (United States)

    El-Atab, Nazek; Turgut, Berk Berkan; Okyay, Ali K; Nayfeh, Munir; Nayfeh, Ammar

    2015-12-01

    In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The results show that graphene nanoplatelets with Al2O3/HfO2 tunnel oxide allow for larger memory windows at the same operating voltages, enhanced retention, and endurance characteristics. The measurements are further confirmed by plotting the energy band diagram of the structures, calculating the quantum tunneling probabilities, and analyzing the charge transport mechanism. Also, the required program time of the memory with ultra-thin asymmetric Al2O3/HfO2 tunnel oxide with graphene nanoplatelets storage layer is calculated under Fowler-Nordheim tunneling regime and found to be 4.1 ns making it the fastest fully programmed MOS memory due to the observed pure electrons storage in the graphene nanoplatelets. With Si nanoparticles, however, the program time is larger due to the mixed charge storage. The results confirm that band-engineering of both tunnel oxide and charge trapping layer is required to enhance the current non-volatile memory characteristics.

  17. Thermal Conductivity and Stability of HfO2-Y2O3 and La2Zr2O7 Evaluated for 1650 Deg C Thermal/Environmental Barrier Coating Applications

    Science.gov (United States)

    Zhu, Dong-Ming; Bansal, Narottam P.; Miller, Robert A.

    2003-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal and environmental barrier coating (T/EBC) materials for gas turbine ceramic matrix composite (CMC) combustor applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature stability of hot-pressed and plasma sprayed specimens with representative partially-stabilized and fully-cubic HfO2-Y2O3 compositions and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasmasprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC hexoloy or SiC/SiC CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications are also discussed.

  18. Ab initio study of the elastic properties of single and polycrystal TiO(2), ZrO(2) and HfO(2) in the cotunnite structure.

    Science.gov (United States)

    Caravaca, M A; Miño, J C; Pérez, V J; Casali, R A; Ponce, C A

    2009-01-07

    In this work, we study theoretically the elastic properties of the orthorhombic (Pnma) high-pressure phase of IV-B group oxides: titania, zirconia and hafnia. By means of the self-consistent SIESTA code, pseudopotentials, density functional theory in the LDA and GGA approximations, the total energies, hydrostatic pressures and stress tensor components are calculated. From the stress-strain relationships, in the linear regime, the elastic constants C(ij) are determined. Derived elastic constants, such as bulk, Young's and shear modulus, Poisson coefficient and brittle/ductile behavior are estimated with the polycrystalline approach, using Voigt-Reuss-Hill theories. We have found that C(11), C(22) and C(33) elastic constants of hafnia and zirconia show increased strength with respect to the experimental values of the normal phase, P 2(1)/c. A similar situation applies to titania if these constants are compared with its normal phase, rutile. However, shear elastic constants C(44), C(55) and C(66) are similar to the values found in the normal phase. This fact increases the compound anisotropy as well as its ductile behavior. The dependence of unit-cell volumes under hydrostatic pressures is also analyzed. P-V data, fitted to third-order Birch-Murnaghan equations of state, provide the bulk modulus B(0) and its pressure derivatives B'(0). In this case, LDA estimations show good agreement with respect to recent measured bulk moduli of ZrO(2) and HfO(2). Thermo-acoustic properties, e.g. the propagation speed of transverse, longitudinal elastic waves together with associated Debye temperatures, are also estimated.

  19. Ab initio study of the elastic properties of single and polycrystal TiO2, ZrO2 and HfO2 in the cotunnite structure

    International Nuclear Information System (INIS)

    Caravaca, M A; Mino, J C; Perez, V J; Casali, R A; Ponce, C A

    2009-01-01

    In this work, we study theoretically the elastic properties of the orthorhombic (Pnma) high-pressure phase of IV-B group oxides: titania, zirconia and hafnia. By means of the self-consistent SIESTA code, pseudopotentials, density functional theory in the LDA and GGA approximations, the total energies, hydrostatic pressures and stress tensor components are calculated. From the stress-strain relationships, in the linear regime, the elastic constants C ij are determined. Derived elastic constants, such as bulk, Young's and shear modulus, Poisson coefficient and brittle/ductile behavior are estimated with the polycrystalline approach, using Voigt-Reuss-Hill theories. We have found that C 11 , C 22 and C 33 elastic constants of hafnia and zirconia show increased strength with respect to the experimental values of the normal phase, P 2 1 /c. A similar situation applies to titania if these constants are compared with its normal phase, rutile. However, shear elastic constants C 44 , C 55 and C 66 are similar to the values found in the normal phase. This fact increases the compound anisotropy as well as its ductile behavior. The dependence of unit-cell volumes under hydrostatic pressures is also analyzed. P-V data, fitted to third-order Birch-Murnaghan equations of state, provide the bulk modulus B 0 and its pressure derivatives B' 0 . In this case, LDA estimations show good agreement with respect to recent measured bulk moduli of ZrO 2 and HfO 2 . Thermo-acoustic properties, e.g. the propagation speed of transverse, longitudinal elastic waves together with associated Debye temperatures, are also estimated.

  20. Effects of HfO2/Al2O3 gate stacks on electrical performance of planar In x Ga1- x As tunneling field-effect transistors

    Science.gov (United States)

    Ahn, Dae-Hwan; Yoon, Sang-Hee; Takenaka, Mitsuru; Takagi, Shinichi

    2017-08-01

    We study the impact of gate stacks on the electrical characteristics of Zn-diffused source In x Ga1- x As tunneling field-effect transistors (TFETs) with Al2O3 or HfO2/Al2O3 gate insulators. Ta and W gate electrodes are compared in terms of the interface trap density (D it) of InGaAs MOS interfaces. It is found that D it is lower at the W/HfO2/Al2O3 InGaAs MOS interface than at the Ta/HfO2/Al2O3 interface. The In0.53Ga0.47As TFET with a W/HfO2 (2.7 nm)/Al2O3 (0.3 nm) gate stack of 1.4-nm-thick capacitance equivalent thickness (CET) has a steep minimum subthreshold swing (SS) of 57 mV/dec, which is attributed to the thin CET and low D it. Also, the In0.53Ga0.47As (2.6 nm)/In0.67Ga0.33As (3.2 nm)/In0.53Ga0.47As (96.5 nm) quantum-well (QW) TFET supplemented with this 1.4-nm-thick CET gate stack exhibits a steeper minimum SS of 54 mV/dec and a higher on-current (I on) than those of the In0.53Ga0.47As TFET.

  1. Multifunctional role of rare earth doping in optical materials: nonaqueous sol-gel synthesis of stabilized cubic HfO2 luminescent nanoparticles.

    Science.gov (United States)

    Lauria, Alessandro; Villa, Irene; Fasoli, Mauro; Niederberger, Markus; Vedda, Anna

    2013-08-27

    In this work a strategy for the control of structure and optical properties of inorganic luminescent oxide-based nanoparticles is presented. The nonaqueous sol-gel route is found to be suitable for the synthesis of hafnia nanoparticles and their doping with rare earths (RE) ions, which gives rise to their luminescence either under UV and X-ray irradiation. Moreover, we have revealed the capability of the technique to achieve the low-temperature stabilization of the cubic phase through the effective incorporation of trivalent RE ions into the crystal lattice. Particular attention has been paid to doping with europium, causing a red luminescence, and with lutetium. Structure and morphology characterization by XRD, TEM/SEM, elemental analysis, and Raman/IR vibrational spectroscopies have confirmed the occurrence of the HfO2 cubic polymorph for dopant concentrations exceeding a threshold value of nominal 5 mol %, for either Lu(3+) or Eu(3+). The optical properties of the nanopowders were investigated by room temperature radio- and photoluminescence experiments. Specific features of Eu(3+) luminescence sensitive to the local crystal field were employed for probing the lattice modifications at the atomic scale. Moreover, we detected an intrinsic blue emission, allowing for a luminescence color switch depending on excitation wavelength in the UV region. We also demonstrate the possibility of changing the emission spectrum by multiple RE doping in minor concentration, while deputing the cubic phase stabilization to a larger concentration of optically inactive Lu(3+) ions. The peculiar properties arising from the solvothermal nonaqueous synthesis here used are described through the comparison with thermally treated powders.

  2. Strain relaxation near high-k/Si interface by post-deposition annealing

    International Nuclear Information System (INIS)

    Emoto, T.; Akimoto, K.; Yoshida, Y.; Ichimiya, A.; Nabatame, T.; Toriumi, A.

    2005-01-01

    We studied the effect of post-deposition annealing on a HfO 2 /Si interface of by extremely asymmetric X-ray diffraction. Comparing the rocking curves before annealing the sample with those of the annealed sample, it is found that an interfacial layer with a density of 3 g/cm 3 grows at the interface between the HfO 2 layer and the substrate during post-deposition annealing. The wavelength dependency of the integrated intensities of the rocking curve for the as-deposited sample fluctuated with the observation position. This fluctuation was suppressed by annealing. From these results we concluded that the strain introduced into the substrate becomes homogeneous by annealing. Moreover, a quantitative estimation of the strain by curve fitting reveals the existence of compressive strain under the HfO 2 layer

  3. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-03-09

    It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.

  4. Ionic exchange and the local structure in the HfO2/Ho2O3 system studied by PAC spectroscopy

    International Nuclear Information System (INIS)

    Richard, D.; Darriba, G.N.; Muñoz, E.L.; Errico, L.A.; Rentería, M.

    2014-01-01

    Highlights: • Suitability of PAC spectroscopy to study inter-diffusion processes. • High level of ionic exchange obtained by ball-milling and thermal treatments. • EFG characterization of 181 Ta impurities at defect-free cation sites of Ho 2 O 3 . • Excellent agreement with other EFG results in bixbyites and ab initio calculations. • A new Ho-doped m-HfO 2 phase was characterized. - Abstract: The ionic exchange of Hf and Ho atoms in the HfO 2 /Ho 2 O 3 system was studied at the atomic level applying the nuclear solid-state Time-Differential γ–γ Perturbed-Angular-Correlation (PAC) spectroscopy. This exchange was promoted by a ball-milling-assisted solid-state reaction between Ho 2 O 3 and m-HfO 2 initial powders. In order to follow and to elucidate the effect of different variables (milling time, temperature, pressure) on the exchange process and the appearance of new phases, 181 Hf(→ 181 Ta) ions were used as local probes in the PAC experiments. The measured hyperfine interactions enabled the electric-field gradient tensor (EFG) characterization at Hf sites at each step of the process. At the final stages of the solid-state reaction, 75–90% Hf-doping at both substitutional defect-free cation sites of Ho 2 O 3 was achieved, being the EFG measured at these sites in excellent agreement with those determined in 181 Hf-implanted Ho 2 O 3 samples and to those predicted by the EFG systematics established in rare-earth bixbyites doped by ion-implantation of 181 Hf(→ 181 Ta) ions. Ab initio electronic structure calculations of the EFG at Ta impurities localized at both cation sites in Ho 2 O 3 also confirm the 181 Hf cationic substitution in both PAC experiments. Additional ab initio calculations at Hf impurity sites in Ho 2 O 3 and Tm 2 O 3 were performed to study the relative Hf preference for the symmetric site of the structure. We showed that high-energy milling plus high temperature treatments are both necessary to achieve a high degree of Hf substitution in the cation sublattice of the Ho 2 O 3 structure. Also, we found that the pressure effect on the crystal structure favors the impurity substitution at cationic sites closer to a homogenous distribution of the probes and with much less local and far disorder. Additional spurious hyperfine interactions that were always present in 181 Hf-implanted Ho 2 O 3 samples were not observed when using this solid-state reaction method. The appearance of a modified m-HfO 2 phase produced after heavy Ho-doping was also discussed

  5. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when integrated with advanced EBC top coats, showed promise to achieve 1500 C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and long-term durability.

  6. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

    Science.gov (United States)

    Rigante, Sara; Scarbolo, Paolo; Wipf, Mathias; Stoop, Ralph L; Bedner, Kristine; Buitrago, Elizabeth; Bazigos, Antonios; Bouvet, Didier; Calame, Michel; Schönenberger, Christian; Ionescu, Adrian M

    2015-05-26

    Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully depleted FinFETs with critical dimensions on the order of 20 nm and HfO2 as a high-k gate insulator have been developed and characterized, showing excellent electrical properties, subthreshold swing, SS ∼ 70 mV/dec, and on-to-off current ratio, Ion/Ioff ∼ 10(6), at room temperature. The same FinFET architecture is validated as a highly sensitive, stable, and reproducible pH sensor. An intrinsic sensitivity close to the Nernst limit, S = 57 mV/pH, is achieved. The pH response in terms of output current reaches Sout = 60%. Long-term measurements have been performed over 4.5 days with a resulting drift in time δVth/δt = 0.10 mV/h. Finally, we show the capability to reproduce experimental data with an extended three-dimensional commercial finite element analysis simulator, in both dry and wet environments, which is useful for future advanced sensor design and optimization.

  7. UV-laser-light-controlled photoluminescence of metal oxide nanoparticles in different gas atmospheres: BaTiO3, SrTiO3 and HfO2

    International Nuclear Information System (INIS)

    Mochizuki, Shosuke; Saito, Takashi; Yoshida, Kaori

    2012-01-01

    The photoluminescence (PL) enhancement has been studied at room temperature using various specimen atmospheres (O 2 gas, CO 2 gas, CO 2 -H 2 mixture gas, Ar-H 2 mixture gas and vacuum) under 325 nm laser light irradiation on various metal oxides. Of them, the results obtained for BaTiO 3 nanocrystals, SrTiO 3 ones and HfO 2 powder crystal are given in the present paper. Their PL were considerably increased in intensity by irradiation of 325 nm laser light in CO 2 gas and CO 2 -H 2 mixture gas. The cause of the PL intensity enhancements is discussed in the light of the exciton theory, the defect chemistry and the photocatalytic theory. The results may be applied for the utilization of greenhouse gas (CO 2 ) and the optical sensor for CO 2 gas.

  8. Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1-xO2/SiO2 high-k stacks as evidenced by atom probe tomography

    Science.gov (United States)

    Tu, Y.; Han, B.; Shimizu, Y.; Kunimune, Y.; Shimada, Y.; Katayama, T.; Ide, T.; Inoue, M.; Yano, F.; Inoue, K.; Nagai, Y.

    2018-01-01

    Hydrogen (H) plays an important role in determining the reliability and performance of HfO2- and Al2O3-based high-k dielectric electronic devices. In order to understand H behavior, deuterium (D), an isotope of H, was introduced into the poly-Si cap of Al2O3/HfxSi1-xO2/SiO2 high-k stacks by ion implantation. Atom probe tomography was used to image the D distribution in samples annealed under different conditions. The results clearly demonstrated that the D atoms were trapped at the interface of poly-Si and Al2O3 after annealing at 900 K for 10 min. Thus, it is possible that Al2O3 blocks the H atoms at the surface, preventing them from diffusing into the high-k dielectrics during the H2 annealing process in current fabrication technology. The current work also exhibits an example of investigating H behavior in semiconductors by atom probe tomography.

  9. Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

    Science.gov (United States)

    Kakushima, K.; Okamoto, K.; Tachi, K.; Song, J.; Sato, S.; Kawanago, T.; Tsutsui, K.; Sugii, N.; Ahmet, P.; Hattori, T.; Iwai, H.

    2008-11-01

    Band bendings of Si substrates have been observed using hard x-ray photoemission spectroscopy. With a capability of collecting photoelectrons generated as deep as 40 nm, the binding energy shift in a core level caused by the potential profile at the surface of the substrate results in a spectrum broadening. The broadening is found to be significant when heavily doped substrates are used owing to its steep potential profile. The surface potential of the substrate can be obtained by deconvolution of the spectrum. This method has been applied to observe the band bending profile of metal-oxide-semiconductor capacitors with high-k gate dielectrics. By comparing the band bending profiles of heavily-doped n+- and p+-Si substrates, the interface dipoles presented at interfaces can be estimated. In the case of W gated La2O3/La-silicate capacitor, an interface dipole to shift the potential of -0.45 V has been estimated at La-silicate/Si interface, which effectively reduces the apparent work function of W. On the other hand, an interface dipole of 0.03-0.07 V has been found to exist at Hf-silicate/SiO2 interface for W gated HfO2/Hf-silicate/SiO2 capacitor.

  10. Interface characterization of atomic layer deposited high-k on non-polar GaN

    Science.gov (United States)

    Jia, Ye; Zeng, Ke; Singisetti, Uttam

    2017-10-01

    The interface properties between dielectrics and semiconductors are crucial for electronic devices. In this work, we report the electrical characterization of the interface properties between atomic layer deposited Al2O3 and HfO2 on non-polar a-plane ( 11 2 ¯ 0 ) and m-plane ( 1 1 ¯ 00 ) GaN grown by hybrid vapor phase epitaxy. A metal oxide semiconductor capacitor (MOSCAP) structure was used to evaluate the interface properties. The impact of annealing on the interface properties was also investigated. The border trap in the oxide, characterized by the capacitance-voltage (C-V) hysteresis loop, was low. The interface state density (Dit), extracted using the ac conductance method, is in the range of 0.5 × 1012/cm2 eV to 7.5 × 1011/cm2 eV within an energy range from 0.2 eV to 0.5 eV below the conduction band minimum. The m-plane GaN MOSCAPs exhibited better interface properties than the a-plane GaN MOSCAPs after annealing. Without annealing, Al2O3 dielectrics had higher border trap density and interface state density compared to HfO2 dielectrics. However, the annealing had different impacts on Al2O3 dielectrics as compared to HfO2. Our results showed that the annealing degraded the quality of the interface in HfO2, but it improved the quality of the interface in Al2O3 devices. The annealing also reduced the positive trapped oxide charge, resulting in a shift of C-V curves towards the positive bias region.

  11. CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

    Science.gov (United States)

    Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

    2014-01-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  12. O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy.

    Science.gov (United States)

    Lucovsky, Gerald; Miotti, Leonardo; Bastos, Karen Paz

    2012-06-01

    Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect states in nano-crystalline transition metal oxides, e.g., HfO2, and the noncrystalline dielectrics, SiO2, Si3N4 and Si-oxynitride alloys. Two-electron multiplet theory been used to develop a high-spin state equivalent d2 model for O-vacancy allowed transitions and negative ion states as detected by X-ray absorption spectroscopy in the O K pre-edge regime. Comparisons between theory and experiment have used Tanabe-Sugano energy level diagrams for determining the symmetries and relative energies of intra-d-state transitions for an equivalent d2 ground state occupancy. Trap-assisted-tunneling, Poole-Frenkel hopping transport, and the negative bias temperature instability have been explained in terms of injection and/or trapping into O-atom and N-atom vacancy sites, and applied to gate dielectric, and metal-insulator-metal structures.

  13. First-principles study of fission product (Xe, Cs, Sr) incorporation and segregation in alkaline earth metal oxides, HfO(2), and the MgO-HfO(2) interface.

    Science.gov (United States)

    Liu, Xiang-Yang; Uberuaga, Blas P; Sickafus, Kurt E

    2009-01-28

    In order to close the nuclear fuel cycle, advanced concepts for separating out fission products are necessary. One approach is to use a dispersion fuel form in which a fissile core is surrounded by an inert matrix that captures and immobilizes the fission products from the core. If this inert matrix can be easily separated from the fuel, via e.g. solution chemistry, the fission products can be separated from the fissile material. We examine a surrogate dispersion fuel composition, in which hafnia (HfO(2)) is a surrogate for the fissile core and alkaline earth metal oxides are used as the inert matrix. The questions of fission product incorporation in these oxides and possible segregation behavior at interfaces are considered. Density functional theory based calculations for fission product elements (Xe, Sr, and Cs) in these oxides are carried out. We find smaller incorporation energy in hafnia than in MgO for Cs and Sr, and Xe if variation of charge state is allowed. We also find that this trend is reversed or reduced for alkaline earth metal oxides with large cation sizes. Model interfacial calculations show a strong tendency of segregation from bulk MgO to MgO-HfO(2) interfaces.

  14. Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  15. Environmental Stability and Oxidation Behavior of HfO2-Si and YbGd(O) Based Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Farmer, Serene; McCue, Terry R.; Harder, Bryan; Hurst, Janet B.

    2017-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, environmental durable environmental barrier coating systems. In this paper, the durability and performance of advanced Electron Beam-Physical Vapor Deposition (EB-PVD) NASA HfO2-Si and YbGdSi(O) EBC bond coat top coat systems for SiCSiC CMC have been summarized. The high temperature thermomechanical creep, fatigue and oxidation resistance have been investigated in the laboratory simulated high-heat-flux environmental test conditions. The advanced NASA EBC systems showed promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  16. Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

    International Nuclear Information System (INIS)

    Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J.R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J.L.

    2016-01-01

    Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with OH − ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl 4 (hafnium tetrachloride), HfI 4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

  17. Emerging Applications for High K Materials in VLSI Technology

    Directory of Open Access Journals (Sweden)

    Robert D. Clark

    2014-04-01

    Full Text Available The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI manufacturing for leading edge Dynamic Random Access Memory (DRAM and Complementary Metal Oxide Semiconductor (CMOS applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing.

  18. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    Directory of Open Access Journals (Sweden)

    Gloux Florence

    2011-01-01

    Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

  19. Investigation of capacitance characteristics in metal/high-k ...

    Indian Academy of Sciences (India)

    Keywords. C − V characteristic; high-k dielectric; interface state density; MIS structure; nanotechnology; TCAD simulation. Abstract. Capacitance vs. voltage ( C − V ) curves at AC high frequency of a metal–insulator–semiconductor (MIS) capacitorare investigated in this paper. Bi-dimensional simulations with Silvaco TCAD ...

  20. Investigation of capacitance characteristics in metal/high-k

    Indian Academy of Sciences (India)

    Keywords. C − V characteristic; high-k dielectric; interface state density; MIS structure; nanotechnology; TCAD simulation. Abstract. Capacitance vs. voltage ( C − V ) curves at AC high frequency of a metal–insulator–semiconductor (MIS) capacitorare investigated in this paper. Bi-dimensional simulations with Silvaco TCAD ...

  1. Investigation of capacitance characteristics in metal/high-k ...

    Indian Academy of Sciences (India)

    2017-08-21

    Aug 21, 2017 ... to investigate capacitance–voltage characteristics of metal– insulator (high k: Al2O3) semiconductor (p-Si) devices. We report on the effect of bias voltage, silicon substrate doping concentration, frequency and temperature on the elec- trical and dielectric properties of TiN/Al2O3/p-Si structure in. 1035 ...

  2. Influence of Design and Process Parameters of 32-nm Advanced-Process High- k p-MOSFETs on Negative-Bias Temperature Instability and Study of Defects

    Science.gov (United States)

    Alimin, A. F. Muhammad; Radzi, A. A. Mohd; Sazali, N. A. F.; Hatta, S. F. Wan Muhamad; Soin, N.; Hussin, H.

    2017-10-01

    Negative-bias temperature instability (NBTI) has become a prominent factor limiting scaling of complementary metal-oxide-semiconductor technology. This work presents a comprehensive simulation study on the effects of critical design parameters of 32-nm advanced-process high- k p-channel metal-oxide-semiconductor field-effect transistors on NBTI. The NBTI mechanism and defects were explored for various geometric and process design parameters over a wide range of values. The NBTI simulation method applied in this work follows the on-the-fly method to capture the mechanisms of fast and slow traps. This work illustrates the dependence of the threshold voltage ( V th) degradation on the stress oxide field and stress temperature as well as investigation of the Arrhenius plot for the devices. The temperature insensitivity during short stress time of 1 ms indicates absence of generated defects and presence of preexisting defects. It is also observed that significant defects are generated in the gate stack subsequent to NBTI. The slope obtained from the V th degradation analysis at 1 ks and 375°C shows that changing the SiO2 interfacial layer thickness affects the V th degradation by 96.16% more than changing the HfO2 thickness and by 80.67% more than changing the metal gate thickness. It is also found that the NBTI effect depends on process design considerations, specifically the boron concentration in the highly doped drain, the metal gate work function, and the halo doping concentration; it was observed that higher boron dose and high metal work function may lead to higher V th degradation. However, the halo doping concentration in the advanced 32-nm structure has an insignificant effect on NBTI.

  3. Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

    International Nuclear Information System (INIS)

    Tang Zhen-Jie; Li Rong; Yin Jiang

    2013-01-01

    A composition-modulated (HfO 2 ) x (Al 2 O3) 1−x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO 2 ) x (Al 2 O 3 ) 1−x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. High-k dielectrics on n-Al0.25Ga0.75N via atomic layer deposition

    Science.gov (United States)

    Nepal, N.; Garces, N. Y.; Meyer, D.; Anderson, T. J.; Hite, J. K.; Mastro, M. A.; Eddy, C. R., Jr.

    2012-02-01

    AlGaN/GaN and AlInN/GaN high-electron-mobility transistors (HEMTs) are promising devices for high-temperature and high-power electronics applications. A key issue with these devices is the high gate leakage current, particularly for enhancement-mode HEMTs. There has been an increased interest in developing high quality gate insulators to reduce gate leakage current. Al2O3 and HfO2 layers (21nm thick)were deposited via atomic layer deposition on n-Al0.25Ga0.75N pretreated with one of two different surface preparations, H2O2:H2SO4 (1:5) (piranha) or HF:H2O (1:3). Dielectrics were characterized using spectroscopic ellipsometry, X-ray photoelectron spectroscopy, atomic force microscopy (AFM), and capacitance-voltage (C-V) measurements. AFM shows that Al2O3 and HfO2 layers are continuous and uniform in thickness on both HF and piranha pretreated surfaces. However, C-V measurement shows smaller (15%) hysteresis for HF pretreated samples. The estimated dielectric constants (ɛ) are 9 and 18 for Al2O3 and HfO2 on HF pretreated surfaces, respectively, in general agreement with theoretical values of 9 and 25. Al2O3 layers on Al0.25Ga0.75N exhibited a lower leakage (7x10-8 A/cm^2 at 5 V) current and higher forward breakdown voltage of 7.5 MV/cm compared to that of HfO2 layer. The higher breakdown voltage and lower leakage current for Al2O3 is due to larger conduction band offset with Al0.25Ga0.75N.

  5. Nanostructure characterization of high k materials by spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Pereira, L.; Aguas, H.; Fortunato, E.; Martins, R.

    2006-01-01

    In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 deg. C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 deg. C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering

  6. Mechanical Design of the NSTX High-k Scattering Diagnostic

    International Nuclear Information System (INIS)

    Feder, R.; Mazzucato, E.; Munsat, T.; Park, H.; Smith, D.R.; Ellis, R.; Labik, G.; Priniski, C.

    2005-01-01

    The NSTX High-k Scattering Diagnostic measures small-scale density fluctuations by the heterodyne detection of waves scattered from a millimeter wave probe beam at 280 GHz and λ = 1.07 mm. To enable this measurement, major alterations were made to the NSTX vacuum vessel and Neutral Beam armor. Close collaboration between the PPPL physics and engineering staff resulted in a flexible system with steerable launch and detection optics that can position the scattering volume either near the magnetic axis (ρ ∼ .1) or near the edge (ρ ∼ .8). 150 feet of carefully aligned corrugated waveguide was installed for injection of the probe beam and collection of the scattered signal in to the detection electronics

  7. A thermodynamic model for the solubility of HfO2(am) in the aqueous K +– HCO3-– CO32-–O-–H2O system

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Dhanpat; Kitamura, Akira; Rosso, Kevin M.

    2017-01-01

    Solubility of HfO2(am) was determined as a function of KHCO3 concentrations ranging from 0.001 mol·kg-1 to 0.1 mol·kg-1. The solubility of HfO2(am) increased dramatically with the increase in KHCO3 concentrations, indicating that Hf(IV) makes strong complexes with carbonate. Thermodynamic equilibrium constants for the formation of Hf-carbonate complexes were determined using both the Pitzer and SIT models. The dramatic increase in Hf concentrations with the increase in KHCO3 concentrations can best be described by the formation of Hf(OH-)2(CO3)22- and Hf(CO3)56-. The log10 K0 values for the reactions [Hf4++2CO32-+2OH-⇌Hf(OH)2(CO3)22-] and [Hf4++5CO32-⇌Hf(CO3)56-], based on the SIT model, were determined to be 44.53±0.46 and 41.53±0.46, respectively, and based on the Pitzer model they were 44.56±0.48 and 40.20±0.48, respectively.

  8. Modeling of leakage currents in high-k dielectrics

    International Nuclear Information System (INIS)

    Jegert, Gunther Christian

    2012-01-01

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO 2 material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO 2 /TiN capacitor structures were suggested and problem areas that may

  9. Modeling of leakage currents in high-k dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Jegert, Gunther Christian

    2012-03-15

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO{sub 2} material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO{sub 2}/TiN capacitor structures were suggested and problem areas

  10. High K+-Induced Relaxation by Nitric Oxide in Human Gastric Fundus

    Science.gov (United States)

    Kim, Dae Hoon; Choi, Woong; Sung, Rohyun; Kim, Hun Sik; Kim, Heon; Yoo, Ra Young; Park, Seon-Mee; Yun, Sei Jin; Song, Young-Jin; Xu, Wen-Xie; Lee, Sang Jin

    2012-01-01

    This study was designed to elucidate high K+-induced relaxation in the human gastric fundus. Circular smooth muscle from the human gastric fundus greater curvature showed stretch-dependent high K+ (50 mM)-induced contractions. However, longitudinal smooth muscle produced stretch-dependent high K+-induced relaxation. We investigated several relaxation mechanisms to understand the reason for the discrepancy. Protein kinase inhibitors such as KT 5823 (1 µM) and KT 5720 (1 µM) which block protein kinases (PKG and PKA) had no effect on high K+-induced relaxation. K+ channel blockers except 4-aminopyridine (4-AP), a voltage-dependent K+ channel (KV) blocker, did not affect high K+-induced relaxation. However, N(G)-nitro-L-arginine and 1H-(1,2,4)oxadiazolo (4,3-A)quinoxalin-1-one, an inhibitors of soluble guanylate cyclase (sGC) and 4-AP inhibited relaxation and reversed relaxation to contraction. High K+-induced relaxation of the human gastric fundus was observed only in the longitudinal muscles from the greater curvature. These data suggest that the longitudinal muscle of the human gastric fundus greater curvature produced high K+-induced relaxation that was activated by the nitric oxide/sGC pathway through a KV channel-dependent mechanism. PMID:23118553

  11. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    International Nuclear Information System (INIS)

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  12. High performance trench MOS barrier Schottky diode with high-k gate oxide

    Science.gov (United States)

    Zhai, Dong-Yuan; Zhu, Jun; Zhao, Yi; Cai, Yin-Fei; Shi, Yi; Zheng, You-Liao

    2015-07-01

    A novel trench MOS barrier Schottky diode (TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS. Project supported by the National Basic Research Program of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR14F040001).

  13. Effects of high-order deformation on high-K isomers in superheavy nuclei

    International Nuclear Information System (INIS)

    Liu, H. L.; Bertulani, C. A.; Xu, F. R.; Walker, P. M.

    2011-01-01

    Using, for the first time, configuration-constrained potential-energy-surface calculations with the inclusion of β 6 deformation, we find remarkable effects of the high-order deformation on the high-K isomers in 254 No, the focus of recent spectroscopy experiments on superheavy nuclei. For shapes with multipolarity six, the isomers are more tightly bound and, microscopically, have enhanced deformed shell gaps at N=152 and Z=100. The inclusion of β 6 deformation significantly improves the description of the very heavy high-K isomers.

  14. Nanocomposites of monodisperse nanoparticles embedded in high-K oxide matrices – a general preparation strategy

    Czech Academy of Sciences Publication Activity Database

    Kubíčková, Simona; Plocek, Jiří; Mantlíková, Alice; Vejpravová, Jana

    2014-01-01

    Roč. 4, č. 10 (2014), s. 5113-5121 ISSN 2046-2069 R&D Projects: GA ČR GAP108/10/1250 Institutional support: RVO:68378271 ; RVO:61388980 Keywords : nanocomposite * sol-gel method * hydrothermal method * high-K oxide * high coercivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.840, year: 2014

  15. Core-shell structured high-k polymer nanocomposites for energy storage and dielectric applications.

    Science.gov (United States)

    Huang, Xingyi; Jiang, Pingkai

    2015-01-21

    High-k polymer nanocomposites have considerable potential in energy storage and dielectric applications because of their ease of processing, flexibility, and low cost. Core-shell nanoarchitecture strategies are versatile and powerful tools for the design and synthesis of advanced high-k polymer nanocomposites. Recent and in-progress state-of-the-art advancements in the application of core-shell nanoarchitecture strategies to design and prepare high-k polymer nanocomposites are summarized. Special focus is directed to emphasizing their advantages over conventional melt-mixing and solution-mixing methods: first, homogeneous nanoparticle dispersion can be easily achieved even in highly loaded nanocomposites; second, the dielectric constant of the nanocomposites can be effectively enhanced and meanwhile the high breakdown strength can be well-preserved; third, for nanocomposites filled with electrically conductive nanoparticles, dielectric loss can be effectively surpressed, and meanwhile a high dielectric constant can be achieved. In addition, fundamental insights into the roles of the interfaces on the dielectric properties of the nanocomposites can be probed. The last part of the article is concluded with current problems and future perspectives of utilizing the core-shell nanoarchitecture strategies for the development of high-k polymer nanocomposites. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Optical characterization of HfO(2) thin films

    Czech Academy of Sciences Publication Activity Database

    Franta, D.; Ohlídal, I.; Nečas, D.; Vižďa, F.; Caha, O.; Hasoň, M.; Pokorný, Pavel

    2011-01-01

    Roč. 519, č. 18 (2011), s. 6085-6091 ISSN 0040-6090 Institutional research plan: CEZ:AV0Z20650511 Keywords : optical properties * ellipsometry * spectrophotometry * hafnium oxide * transition-metal oxide * Urbach tail Subject RIV: JK - Corrosion ; Surface Treatment of Materials Impact factor: 1.890, year: 2011

  17. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  18. High-k shallow traps observed by charge pumping with varying discharging times

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wang, Bin-Wei; Cao, Xi-Xin [Department of Embedded System Engineering, Peking University, Beijing, P.R.China (China); Chen, Hua-Mao [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

    2013-11-07

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

  19. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with silicon selectivity

    Science.gov (United States)

    Shoeb, Juline

    Plasma-surface interactions are very important in the fabrication of the nm-sized features of integrated circuits. Plasma processes are employed to produce high-resolution patterns in many of the thin layers of silicon integrated circuits and to remove masking layers while maintaining high selectivity. Integrated plasma processes consisting of sequential steps such as etch, clean and surface modification, are used in semiconductor industries. The surface in contact with the process plasma is exposed to the fluxes of neutrals, ions, molecules, electrons and photons. Modeling of surface reaction mechanisms requires the determination of the characterizations of fluxes (e.g. composition, magnitude, energy and angle) and development of the reaction mechanisms of the processes such as adsorption, reflection, bond breaking and etch product evolution, while reproducing the experimental results. When modeling the reaction mechanism for an entirely new material, the experimental data is often fragmentary. Therefore, fundamental principles such as bond energies and volatility of the etch products must be considered to develop the mechanism. In this thesis, results from a computational investigation of porous low-k SiCOH etching in fluorocarbon plasmas, damage during cleaning of CFx polymer etch residue in Ar/O2 and He/H2 plasmas, NH3 plasma pore sealing and low-k degradation due to water uptake, will be discussed. The plasma etching of HfO2 gate-stacks is also computationally investigated with an emphasis on the selectivity between HfO2 and Si.

  20. High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

    Directory of Open Access Journals (Sweden)

    Michitaka Yoshino

    2016-03-01

    Full Text Available Vertical structured Gallium nitride (GaN p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/cm (SiO2 (k = 3.9. The diodes were fabricated using the high-k mixed oxide of SiO2 and CeO2 with k = 12.3. I–V characteristics of the diode with a field plate showed a breakdown voltage above 2 kV with an increased avalanche resistance. This means that the electric field reduces at the periphery of the mesa-etched p-n junction and is uniformly formed across the whole p-n junction. It is clear that high-k dielectric film passivation and filed plate termination are essential techniques for GaN power devices.

  1. High-k dielectrics as bioelectronic interface for field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Borstlap, D.

    2007-03-15

    Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1

  2. Crosslinkable high k polymer dielectrics for low voltage organic field-effect transistor memories (Conference Presentation)

    Science.gov (United States)

    Wu, Hung-Chin; Hung, Chih-Chien; Chiu, Yu-Cheng; Tung, Shih-Huang; Chen, Wen-Chang

    2016-09-01

    High Performance organic field-effect transistor (OFET) memory devices were successfully prepared using new dielectric materials, poly(N-(hydroxymethyl)acrylamide-co-5 -(9-(5-(diethylamino)pentyl)-2-(4-vinylphenyl)-9H-fluorene (P(NMA-co-F6NSt)), which contained chemical cross-linkable segment (NMA) and hole trapping building block (F6NSt). The high k characteristics of P(NMA-co-F6NSt)) led to a low voltage operation, a small power consumption, and a good digital information storage capacity. Such P(NMA-co-F6NSt) dielectrics in OFET memories with variant NMA/F6NSt molar ratios (100/0 (P1), 95/5 (P2), 80/20 (P3), and 67/33 (P4)) showed excellent insulating properties and good charge storage performance under a low operating voltage below ±5V, due to the tightly network structures after crosslinking and well-dispersed trapping cites (i.e. fluorene moieties). P3-based memory device, in particular, exhibited largest memory window of 4.13 V among the studied polymers, and possessed stable data retention stability over 104 s with a high on/off current ratio (i.e. 104) and good endurance characteristics of more than 200 write-read-write-erase (WRER) cycles. The above results suggested that a high-performance OFET memory device could be facilely achieved using the novel synthesized high-k copolymers.

  3. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

    Science.gov (United States)

    Sengupta, Amretashis; Sarkar, Chandan Kumar; Requejo, Felix G.

    2011-10-01

    Here, we present a comparative theoretical study on stacked (multilayer) gate dielectric MOS memory devices, having a metallic/semiconducting carbon nanotube (CNT), silicon nanowire (Si NW) and fullerene (C60) embedded nitride layer acting as a floating gate. Two types of devices, one with HfO2-SiO2 stack (stack-1) and the other with La2O3-SiO2 stack (stack-2) as the tunnel oxide were compared. We evaluated the effective barrier height, the dielectric constant and the effective electron mobility in the composite gate dielectric with the Maxwell-Garnett effective medium theory. Thereafter applying the WKB approximation, we simulated the Fowler-Nordheim (F-N) tunnelling/writing current and the direct tunnelling/leakage current in these devices. We evaluated the I-V characteristics, the charge decay and also the impact of CNT/Si NW aspect ratio and the volume fraction on the effective barrier height and the write voltage, respectively. We also simulated the write time, retention time and the erase time of these MOS devices. Based on the simulation results, it was concluded that the metallic CNT embedded stack-1 device offered the best performance in terms of higher F-N tunnelling current, lower direct tunnelling current and lesser write voltage and write time compared with the other devices. In case of direct tunnelling leakage and retention time it was found that the met CNT embedded stack-2 device showed better characteristics. For erasing, however, the C60 embedded stack-1 device showed the smallest erase time. When compared with earlier reports, it was seen that CNT, C60 and Si NW embedded devices all performed better than nanocrystalline Si embedded MOS non-volatile memories.

  5. Projected shell model analysis of multi-quasiparticle high-K isomers in sup 1 sup 7 sup 4 Hf

    CERN Document Server

    Zhou Xian Rong; Sun Yang; Long Gui Lu

    2002-01-01

    Multi-quasiparticle high-K states in sup 1 sup 7 sup 4 Hf are studied in the framework of the projected shell model. The calculation reproduces well the observed ground-state band as well as most of the two- and four-quasiparticle rotational bands. Some as yet unobserved high-K isomeric states in sup 1 sup 7 sup 4 Hf are predicted. Possible reasons for the existing discrepancies between calculation and experiment are discussed. It is suggested that the projected shell model may be a useful method for studying multi-quasiparticle high-K isomers and the K-mixing phenomenon in heavy deformed nuclei

  6. A charge transport study in diamond, surface passivated by high-k dielectric oxides

    Energy Technology Data Exchange (ETDEWEB)

    Kovi, Kiran Kumar, E-mail: KiranKumar.Kovi@angstrom.uu.se; Majdi, Saman; Gabrysch, Markus; Isberg, Jan [Division for Electricity, Department of Engineering Sciences, Box 534, Uppsala University, Uppsala SE-751 21 (Sweden)

    2014-11-17

    The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation.

  7. Maintaining K+ balance on the low-Na+, high-K+ diet

    Science.gov (United States)

    Cornelius, Ryan J.; Wang, Bangchen; Wang-France, Jun

    2016-01-01

    A low-Na+, high-K+ diet (LNaHK) is considered a healthier alternative to the “Western” high-Na+ diet. Because the mechanism for K+ secretion involves Na+ reabsorptive exchange for secreted K+ in the distal nephron, it is not understood how K+ is eliminated with such low Na+ intake. Animals on a LNaHK diet produce an alkaline load, high urinary flows, and markedly elevated plasma ANG II and aldosterone levels to maintain their K+ balance. Recent studies have revealed a potential mechanism involving the actions of alkalosis, urinary flow, elevated ANG II, and aldosterone on two types of K+ channels, renal outer medullary K+ and large-conductance K+ channels, located in principal and intercalated cells. Here, we review these recent advances. PMID:26739887

  8. High k oxides on Germanium: High energy x-ray detector R&D

    Science.gov (United States)

    Rumaiz, Abdul; Carini, Gabriella; Siddons, Peter; Rehak, Pavel

    2010-03-01

    The higher density of Germanium (Ge) makes it an ideal candidate for high energy x-ray detectors. The higher mobility of carriers combined with a low effective mass in Ge as compared to Silicon has generated a lot of interest in Ge based devices for high speed devices. However the challenge associated with native oxide makes pixel isolation in a diode array very challenging. Furthermore suitable implants and activation of the implants with temperature constrain is also an issue. We have made a simple Ge diode with Boron and Phosphor as p and n implant. Low temperature grown high k oxide by direct metal sputtering and atomic layer deposition was used. Details of the Ge wafer processing and the effect of different interface layer on the capacitance-voltage characteristics will be discussed.

  9. Evaluation of Synthesis & Processing Routes for the High K Boron Nitride Nano Tubes (BNNTS) for Thermal Management Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The purpose of this proposal is to develop and demonstrate the feasibility of processing the High Thermal Conductivity Boron Nitride Nano Tubes (High-K BNNTs) that...

  10. Psychometrics and life history strategy: the structure and validity of the High K Strategy Scale.

    Science.gov (United States)

    Copping, Lee T; Campbell, Anne; Muncer, Steven

    2014-03-22

    In this paper, we critically review the conceptualization and implementation of psychological measures of life history strategy associated with Differential K theory. The High K Strategy Scale (HKSS: Giosan, 2006) was distributed to a large British sample (n = 809) with the aim of assessing its factor structure and construct validity in relation to theoretically relevant life history variables: age of puberty, age of first sexual encounter, and number of sexual partners. Exploratory and confirmatory factor analyses indicated that the HKSS in its current form did not show an adequate statistical fit to the data. Modifications to improve fit indicated four correlated factors (personal capital, environmental stability, environmental security, and social capital). Later puberty in women was positively associated with measures of the environment and personal capital. Among men, contrary to Differential K predictions but in line with female mate preferences, earlier sexual debut and more sexual partners were positively associated with more favorable environments and higher personal and social capital. We raise concerns about the use of psychometric indicators of lifestyle and personality as proxies for life history strategy when they have not been validated against objective measures derived from contemporary life history theory and when their status as causes, mediators, or correlates has not been investigated.

  11. Full Polymer Dielectric Elastomeric Actuators (DEA Functionalised with Carbon Nanotubes and High-K Ceramics

    Directory of Open Access Journals (Sweden)

    Tilo Köckritz

    2016-09-01

    Full Text Available Dielectric elastomer actuators (DEA are special devices which have a simple working and construction principle and outstanding actuation properties. The DEAs consist of a combination of different materials for the dielectric and electrode layers. The combination of these layers causes incompatibilities in their interconnections. Dramatic differences in the mechanical properties and bad adhesion of the layers are the principal causes for the reduction of the actuation displacement and strong reduction of lifetime. Common DEAs achieve actuation displacements of 2% and a durability of some million cycles. The following investigations represent a new approach to solving the problems of common systems. The investigated DEA consists of only one basic raw polymer, which was modified according to the required demands of each layer. The basic raw polymer was modified with single-walled carbon nanotubes or high-k ceramics, for example, lead magnesium niobate-lead titanate. The development of the full polymer DEA comprised the development of materials and technologies to realise a reproducible layer composition. It was proven that the full polymer actuator worked according to the theoretical rules. The investigated system achieved actuation displacements above 20% regarding thickness, outstanding interconnections at each layer without any failures, and durability above 3 million cycles without any indication of an impending malfunction.

  12. High-k perovskite gate oxide BaHfO3

    Science.gov (United States)

    Kim, Young Mo; Park, Chulkwon; Ha, Taewoo; Kim, Useong; Kim, Namwook; Shin, Juyeon; Kim, Youjung; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

    2017-01-01

    We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 as a channel layer on SrTiO3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO3 buffer layer was grown on SrTiO3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm2 V-1 s-1, a Ion/Ioff ratio higher than 107, and a subthreshold swing value of 0.80 V dec-1. We compare the device performances with those of other field effect transistors based on BaSnO3 channels and different gate oxides.

  13. High-k perovskite gate oxide BaHfO3

    Directory of Open Access Journals (Sweden)

    Young Mo Kim

    2017-01-01

    Full Text Available We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 as a channel layer on SrTiO3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO3 buffer layer was grown on SrTiO3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm2 V−1 s−1, a Ion/Ioff ratio higher than 107, and a subthreshold swing value of 0.80 V dec−1. We compare the device performances with those of other field effect transistors based on BaSnO3 channels and different gate oxides.

  14. Growth and characterization of high k ZrO2 on Ge (100)

    Science.gov (United States)

    Rumaiz, Abdul; Carini, Gabriella; Siddons, Peter; Woicik, Joseph; Rehak, Pavel

    2009-03-01

    The higher mobility of carriers combined with a low effective mass in Ge as compared to Si has generated a lot of interest in Ge based devices. This is particularly so in X-ray radiation detectors where Si based detectors become transparent at higher energy. The challenge in realizing a Ge based detector is having a robust barrier oxide since the native Ge oxide is hygroscopic. We have grown high k ZrO2 on Ge (100) using direct metal sputtering followed by UV oxidation [1]. High energy X-ray photoelectron spectroscopy (XPS) was performed to study the oxidation state of ZrO2 as well the interface with Ge. A simple structure with Ge/GeO/ZrO2(25 nm)/Al (200 nm) was created. A significant hysteresis was observed in the capacitance-voltage measurement which is indicative of some interface states [2]. The effect of the intermediate layer between ZrO2 and Ge on the interface states will be addressed. Valence band measurement done using high energy XPS will be discussed. [1] C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntrye and K. C. Sarawat, IEEE Electron Dev. Lett. 28, 473 (2002) [2] H. Kim, C.O. Chui, K. C. Sarawat and P. C. McIntrye, Apl. Phys. Lett. 83, 2647 (2003)

  15. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  16. Overview of High-k Scattering Diagnostics on NSTX and NSTX-U

    Science.gov (United States)

    Ren, Y.; Mazzucato, E.; Smith, D. R.; Barchfeld, R.; Domier, C. W.; Scott, E. R.; Luhmann, N. C., Jr.; Kaita, R.; Ellis, R.; Lee, K. C.

    2017-10-01

    Electron-gyro scale turbulence, e.g. driven by the Electron Temperature Gradient (ETG), has been proposed as a potential candidate for driving anomalous electron thermal transport, a major problem for magnetic confinement fusion. NSTX and NSTX-U provide a unique laboratory for studying electron-scale turbulence and its relation to electron thermal transport due to their low toroidal field, high plasma beta, low aspect ratio and large ExB flow shear. Electron-gyro scale turbulence has been successfully measured in NSTX using a unique high-kr microwave scattering system, providing the first direct evidence of ETG turbulence in STs and detailed studies of parametric dependence of electron-scale turbulence. However, the high-kr microwave scattering system could not capture the predicted ETG spectral peak. Thus a new high-kθ FIR scattering system is being implemented for NSTX-U. We will present an overview of the scattering systems on NSTX and NSTX-U, including physics designs, capabilities and recent physics results. We will also discuss methods to achieve radially localized scattering measurements. The work is supported by DOE.

  17. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  18. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm.

    Science.gov (United States)

    Zhao, Chun; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R

    2014-07-15

    Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high -k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high -k dielectrics for the performance improvement. Application of high -k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly.

  19. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

    Directory of Open Access Journals (Sweden)

    Chun Zhao

    2014-07-01

    Full Text Available Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high-k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high-k dielectrics for the performance improvement. Application of high-k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly.

  20. Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

    CERN Document Server

    Tsuchiya, Y; Tung, R T; Oda, S; Kurosawa, M; Hattori, T

    2003-01-01

    The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness approx 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models. (author)

  1. Study of 6T SRAM cell using High-K gate dielectric based junctionless silicon nanotube FET

    Science.gov (United States)

    Tayal, Shubham; Nandi, Ashutosh

    2017-12-01

    This paper investigates the performance of 6 T SRAM cell using high-K gate dielectric based junctionless silicon nanotube FET (JLSiNTFET). It is observed that the use of high-K gate dielectric enhances the delay performance of the JLSiNTFET based 6 T SRAM cell. Read access time (RAT) and write access time (WAT) improves by ∼18% and ∼20% when TiO2 is used as gate dielectric instead of SiO2. The hold, read, and write SNMs (static noise margin) of the 6 T SRAM cell also improves marginally by the use of high-K gate dielectric. Furthermore, it is also observed that the improvement in hold SNM (HSNM), read SNM (RSNM), and write SNM (WSNM) can be boosted by using higher interfacial layer thickness (TI). However, the improvement in read access times (RAT) & write access time (WAT) degrades at higher TI. Thus, high-K gate dielectrics with high interfacial layer thickness are more suitable for JLSiNT-FET based 6 T SRAM cell.

  2. Comparison of the quality of the chest film between digital radiography and conventional high kV radiography

    International Nuclear Information System (INIS)

    Zeng Qingsi; Cen Renli; Chen Ling; He Jianxun; Lin Hanfei

    2003-01-01

    Objective: To evaluate the quality and usefulness of direct digital radiography system in roentgenogram of chest in clinical practice. Methods: 1000 cases of chest roentgenograms with digital radiography and high kV conventional radiography were selected for analysis by 3 senior radiologists. Results: 1. With digital radiography system, the quality of chest film was assessed as grade A in 50.6%, grade B in 38.5%, grade C in 10.9%, and no waste film. 2. With conventional high kV radiography, the quality of chest film was assessed as grade A in 41.1%, grade B in 44.1%, grade C in 13.3%, and waste film in 1.5%. The direct digital radiography was statistically superior to the conventional high kV radiography. 3. The fine structure of the lungs could be revealed in 100.0% of chest roentgenogram with direct digital radiograph system, which was significantly higher than that acquired with the conventional high KV radiography (78.6%, P < 0.001). Conclusion: Direct digital radiography could provide the chest film with better quality than that with the conventional high kV radiography. The direct digital radiography system is easy to operate, fast in capturing imaging and could provide post-processing techniques, which will facilitate the accurate diagnosis of chest radiography

  3. Analog/RF performance analysis of channel engineered high-K gate-stack based junctionless Trigate-FinFET

    Science.gov (United States)

    Tayal, Shubham; Nandi, Ashutosh

    2017-12-01

    In this paper, the effect of channel parameters like channel thickness (TSi) and channel length (Lg) on the analog/RF performance of high-K gate-stack based junctionless Trigate-FinFET (JLT-FinFET) have been studied using TCAD mixed-mode Sentaurus device simulator. It is observed that use of high-K gate dielectric deteriorates the analog/RF performance of the gate-stack based JLT-FinFET. The variation of change in analog/RF FOMs (ΔFOM = FOMK=3.9 - FOMK=40) with respect to channel parameters have been focused throughout this study. It is observed that the deterioration in intrinsic dc gain (ΔAV = (AV(K=3.9) - AV(K=40))) with high-K gate dielectrics aggravates with scaling down of TSi (from 2.31 dB at TSi = 12 nm to 5.2 dB at TSi = 6 nm) but increases marginally with scaling down of Lg (ΔAV = 7.6 dB at Lg = 30 nm and ΔAV = 8.7 dB at Lg = 15 nm). However, the deterioration in maximum oscillation frequency (ΔfMAX) and cut-off frequency (ΔfT) are almost negligible. Moreover, it is also observed that the deterioration in analog/RF FOMs due to high-K gate dielectrics can be reduced by upscaling of interfacial layer thickness (TI). Consequently, higher TI value can be convenient in designing of high-K gate-stack based junctionless Trigate-FinFET at lower TSi for analog/RF applications.

  4. Structural and optical properties of germanium nanostructures on Si(100 and embedded in high-k oxides

    Directory of Open Access Journals (Sweden)

    Ray Samit

    2011-01-01

    Full Text Available Abstract The structural and optical properties of Ge quantum dots (QDs grown on Si(001 for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001 QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices.

  5. A new method of dielectric characterization in the microwave range for high-k ferroelectric thin films

    OpenAIRE

    Nadaud, Kevin; Gundel, Hartmut,; Borderon, Caroline; Gillard, Raphaël; Fourn, Erwan

    2013-01-01

    International audience; In this paper we propose a new method of dielectric characterization of high-k thin films based on the measurement of coplanar capacitor inserts between two coplanar waveguide transmission lines. The measurement geometry is deposed on the thin film which is elaborate on an insulating substrate. The thin film permittivity is extracted with the help of a mathematical model describing the capacitance between two conductor plates deposed on a 2-layers substrate. A simple c...

  6. A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

    Directory of Open Access Journals (Sweden)

    Mario Lanza

    2014-03-01

    Full Text Available Metal-Insulator-Metal (MIM structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM. In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or “0” and a low resistive state (LRS or “1”, which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses.

  7. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

    2013-09-20

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

  8. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    International Nuclear Information System (INIS)

    Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

    2013-01-01

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

  9. Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

    Science.gov (United States)

    Su, Yaorong

    Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces

  10. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

    Science.gov (United States)

    Zhang, Liangliang; Li, Huanglong; Guo, Yuzheng; Tang, Kechao; Woicik, Joseph; Robertson, John; McIntyre, Paul C

    2015-09-23

    Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface layer between an atomic layer deposited Al2O3 gate dielectric and a Ge(100) substrate during forming gas anneal (FGA). Capacitance- and conductance-voltage data were used to extract the interface trap density energy distribution. These results show selective passivation of interface traps with energies in the top half of the Ge band gap under annealing conditions that produce GeO2 interface layer growth. First-principles modeling of Ge/GeO2 and Ge/GeO/GeO2 structures and calculations of the resulting partial density of states (PDOS) are in good agreement with the experiment results.

  11. Key role of glycogen storage in high K+-induced contraction of the smooth muscles of the bovine trachea.

    Science.gov (United States)

    Kaneda, Takeharu; Fujieda, Tomoe; Eto, Yuta; Nagai, Yuta; Sasaki, Noriyasu; Tajima, Tsuyoshi; Urakawa, Norimoto; Shimizu, Kazumasa

    2012-10-01

    To elucidate the role of glycogen in the contraction of tracheal smooth muscle, we investigated the changes in the glycogen contents of the bovine trachea during contractions induced by high K(+) and hypoxia (achieved by bubbling N(2) instead of O(2)), either in a glucose-free condition or in the presence of iodoacetic acid (IAA), an inhibitor of glycolysis. Hyperosmotic addition of 65 mM KCl (H-65 K(+)) induced a sustained contraction. A glucose-free condition did not affect H-65 K(+)-induced contraction. However, hypoxia slightly inhibited the contraction, and glucose-free PSS with hypoxia or IAA remarkably inhibited the H-65 K(+)-induced contraction. H-65 K(+) induced a sustained increase in reduced pyridine nucleotide (PNred) fluorescence, representing glycolysis activity. Hypoxia alone slightly enhanced PNred fluorescence, and when combined with a glucose-free condition, it remarkably enhanced the H-65 K(+)-induced PNred fluorescence. IAA inhibited PNred fluorescence. In the presence of H-65 K(+), a glucose-free condition, hypoxia and the combination of glucose-free PSS and hypoxia decreased the glycogen contents. However, IAA had no effect on glycogen contents. Although hypoxia or glucose-free PSS did not affect PCr and ATP contents, the combination of hypoxia and glucose-free PSS or IAA induced a gradual decrease of PCr content. In conclusion, we suggest that endogenous glycogen was utilized to increase the activity of glycolysis for maintaining high K(+)-induced contraction of the bovine trachea in the glucose -free and/or hypoxic condition.

  12. Net K+ secretion in the thick ascending limb of mice on a low-Na, high-K diet.

    Science.gov (United States)

    Wang, Bangchen; Wen, Donghai; Li, Huaqing; Wang-France, Jun; Sansom, Steven C

    2017-10-01

    Because of its cardio-protective effects, a low-Na, high-K diet (LNaHK) is often warranted in conjunction with diuretics to treat hypertensive patients. However, it is necessary to understand the renal handling of such diets in order to choose the best diuretic. Wild-type (WT) or Renal Outer Medullary K channel (ROMK) knockout mice (KO) were given a regular (CTRL), LNaHK, or high-K diet (HK) for 4-7 days. On LNaHK, mice treated with either IP furosemide for 12 hrs, or given furosemide in drinking water for 7 days, exhibited decreased K clearance. We used free-flow micropuncture to measure the [K + ] in the early distal tubule (EDT [K + ]) before and after furosemide treatment. Furosemide increased the EDT [K + ] in WT on CTRL but decreased that in WT on LNaHK. Furosemide did not affect the EDT [K + ] of KO on LNaHK or WT on HK. Furosemide-sensitive Na + excretion was significantly greater in mice on LNaHK than those on CTRL or HK. Patch clamp analysis of split-open TALs revealed that 70-pS ROMK exhibited a higher open probability (Po) but similar density in mice on LNaHK, compared with CTRL. No difference was found in the density or Po of the 30 pS K channels between the two groups. These results indicate mice on LNaHK exhibited furosemide-sensitive net K + secretion in the TAL that is dependent on increased NKCC2 activity and mediated by ROMK. We conclude that furosemide is a K-sparing diuretic by decreasing the TAL net K + secretion in subjects on LNaHK. Copyright © 2017 International Society of Nephrology. Published by Elsevier Inc. All rights reserved.

  13. Synthesis and structural characterization of (Bi2O3)(Y2O3) x and ...

    Indian Academy of Sciences (India)

    Lattice parameters of fcc phase of Y2O3 doped samples were calculated from the X-ray diffraction data. The lattice constant `' gradually decreases with increasing content of dopant concentration () for the Y2O3 doped system and obeys Vegard's rule. The unit cell parameters for the (Bi2O3)1– (Gd2O3) doped ...

  14. Comprehensive capacitance-voltage analysis including quantum effects for high-k interfaces on germanium and other alternative channel materials

    Science.gov (United States)

    Anwar, Sarkar R. M.

    High mobility alternative channel materials to silicon are critical to the continued scaling of metal oxide semiconductor (MOS) devices. However, before they can be incorporated into advanced devices, some major issues need to be solved. The high mobility materials suffer from lower allowable thermal budgets compared to Si (before desorption and defect formation becomes an issue) and the absence of a good quality native oxide has further increased the interest in the use of high-k dielectrics. However, the high interface state density and high electric fields at these semiconductor/high-k interfaces can significantly impact the capacitance-voltage (C-V) profile, and current C-V modeling software cannot account for these effects. This in turn affects the parameters extracted from the C-V data of the high mobility semiconductor/high-k interface, which are crucial to fully understand the interface properties and expedite process development. To address this issue, we developed a model which takes into account quantum corrections which can be applied to a number of these alternative channel materials including SixGe1-x, Ge, InGaAs, and GaAs. The C-V simulation using this QM correction model is orders of magnitude faster compared to a full band Schrodinger-Poisson solver. The simulated C-V is directly benchmarked to a self consistent Schrodinger-Poisson solution for each bulk semiconductor material, and from the benchmarking process the QM correction parameters are extracted. The full program, C-V Alternative Channel Extraction (CV ACE), incorporates a quantum mechanical correction model, along with the interface state density model, and can extract device parameters such as equivalent oxide thickness (EOT), doping density and flat band voltage (Vfb) as well as the interface state density profile using multiple measurements performed at different frequencies and temperatures, simultaneously. The program was used to analyze experimentally measured C-V profiles and the

  15. Capacitance–voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

    Science.gov (United States)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

    2018-02-01

    Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance–voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

  16. Electrical characterization of thulium silicate interfacial layers for integration in high-k/metal gate CMOS technology

    Science.gov (United States)

    Dentoni Litta, Eugenio; Hellström, Per-Erik; Henkel, Christoph; Östling, Mikael

    2014-08-01

    This work presents a characterization of the electrical properties of thulium silicate thin films, within the scope of a possible application as IL (interfacial layer) in scaled high-k/metal gate CMOS technology. Silicate formation is investigated over a wide temperature range (500-900 °C) through integration in MOS capacitor structures and analysis of the resulting electrical properties. The results are compared to those obtained from equivalent devices integrating lanthanum silicate interfacial layers. The thulium silicate IL is formed through a gate-last CMOS-compatible process flow, providing IL EOT of 0.1-0.3 nm at low formation temperature and interface state density at flatband condition below 2 × 1011 cm-2 eV-1. The effects of a possible integration in a gate-first process flow with a maximum thermal budget of 1000 °C are also evaluated, achieving an IL EOT of 0.2-0.5 nm, an interface state density at flatband condition ˜1 × 1011 cm-2 eV-1 and a reduction in gate leakage current density of one order of magnitude compared to the same stack without IL.

  17. Structural, chemical and electrical characterization of HfNO-HfTiO high-k dielectric stack

    Energy Technology Data Exchange (ETDEWEB)

    Mikhelashvili, Visorian; Eisenstein, Gadi [Electrical Engineering Dept., Technion (Israel); Paramasivam, Thangadurai; Kaplan, Wayne [Material Engineering Dept., Technion (Israel)

    2008-07-01

    We study the influence of annealing temperature on structural, compositional and electrical characteristics of a MOS structure with a high-k dielectric based on a 5 nm HfNO-HfTiO nanolaminate stack. A common feature of all samples independent on annealing temperature is the observation of two distinct 2-2.5 and 2.3-2.5 nm thick layers, respectively for transition (close to Si substrate) and top layers. The transition layer is amorphous, while in the top layer some crystalline inclusions embedded into the amorphous matrix are observed. EDS line-scans and XPS analysis showed that the transition layer is similar to metal-Si-O-N or metal-Si-O. The minimum values of quantum mechanical corrected effective oxide thickness close to 1.29 and 0.86 nm, respectively for structures with Au and Cr electrodes. A large reduction of leakage current density to 1.5 x 10{sup -8} and 2.9 x 10{sup -7} A/cm{sup 2}, respectively for Au and Cr gate electrodes at an electric fields of 2 MV/cm was observed with annealing temperature and breakdown electric field as high as 10-12 MV/cm, was measured independently of the electrodes type.

  18. Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination

    Science.gov (United States)

    Bai, Zhiyuan; Du, Jiangfeng; Xin, Qi; Li, Ruonan; Yu, Qi

    2018-02-01

    We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect by varying the dielectric thickness dge under the GET, thickness TP, and dielectric constant εr of the high-K passivation layer. The leakage current was reduced by increasing εr and decreasing dge. The breakdown voltage of the device was enhanced by increasing εr and TP. The highest breakdown voltage of 970 V and the lowest leakage current of 0.5 nA/mm were achieved under the conditions of εr = 80, TP = 800 nm, and dge = 10 nm. C-V simulation revealed that the HPG-SBDs induced no parasitic capacitance by comparing the integrated charges of the devices with different high-K dielectrics and different dge.

  19. Variable angle spectroscopic ellipsometric characterization of HfO2 thin film

    Science.gov (United States)

    Kumar, M.; Kumari, N.; Karar, V.; Sharma, A. L.

    2018-02-01

    Hafnium Oxide film was deposited on BK7 glass substrate using reactive oxygenated E-Beam deposition technique. The film was deposited using in-situ quartz crystal thickness monitoring to control the film thickness and rate of evaporation. The thin film was grown with a rate of deposition of 0.3 nm/s. The coated substrate was optically characterized using spectrophotometer to determine its transmission spectra. The optical constants as well as film thickness of the hafnia film were extracted by variable angle spectroscopic ellipsometry with Cauchy fitting at incidence angles of 65˚, 70˚ and 75˚.

  20. Current Thermal Emission from Photonic Nanostructures Composed of TA, W, GE, and HFO2 Thin Films

    Science.gov (United States)

    2015-03-01

    41) Potter evaluated the Sellmeier...Hunt, A. Vredenberg, T. Harris , J. Poate, D. Jacobson, Y. Wong and G. Zydzik, ’Enhanced photoluminescence by resonant absorption in Er...Optical Society of America, vol. 69, no. 1, p. 179-180, 1979. [76] R. F. Potter , ‘Germanium (Ge),’ in Handbook of optical Constants of Solids

  1. New quantum cascade laser architectures: II-VI quantum cascade emitters, high k-space lasing, and short injectors

    Science.gov (United States)

    Franz, Kale J.

    Quantum cascade (QC) lasers are today's most capable mid-infrared light sources. With up to watt-level room temperature emission over a broad swath of mid-infrared wavelengths, these tiny semiconductor devices enable a variety of applications and technologies such as ultra-sensitive systems for detecting trace molecules in the vapor phase. The foundation of a QC structure lies in alternating hundreds of wide- and narrow-bandgap semiconductor layers to form a coupled quantum well system. In this way, the laws of quantum mechanics are used to precisely engineer electron transport and create artificial optical transitions. The result is a material with capabilities not found in nature, a truly "designer" material. As a central theme in this thesis, we stress the remarkable flexibility of the quantum cascade---the ability to highly tailor device structure for creative design concepts. The QC idea, in fact, relies on no particular material system for its implementation. While all QC lasers to date have been fabricated from III--V materials such as InGaAs/AlInAs, I detail our preliminary work on ZnCdSe/ZnCdMgSe---a II--VI materials system---where we have demonstrated electroluminescence. We then further discuss how the inherent QC flexibility can be exploited for new devices that extend QC performance and capabilities. In this regard, we offer the examples of excited state transitions and short injectors. Excited state transitions are an avenue to enhancing optical gain, which is especially needed for longer-wavelength devices where optical losses hinder performance. Likewise, shortening the QC injector length over a conventional QC structure has powerful implications for threshold current, output power, and wall-plug efficiency. In both cases, novel physical effects are discovered. Pumping electrons into highly excited states led to the discovery of high k-space lasing from highly non-equilibrium electron distributions. Shortening QC injector regions allowed us to

  2. Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide

    International Nuclear Information System (INIS)

    Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Testsu

    2012-01-01

    The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al 2 O 3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al 2 O 3 ) blocking oxide, we confirmed an operation voltage reduction of ∼7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10 -10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al 2 O 3 ) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.

  3. Simulation design of high reverse blocking high-K/low-K compound passivation AlGaN/GaN Schottky barrier diode with gated edge termination

    Science.gov (United States)

    Bai, Zhiyuan; Du, Jiangfeng; Xin, Qi; Li, Ruonan; Yu, Qi

    2017-11-01

    In this paper, a novel high-K/low-K compound passivation AlGaN/GaN Schottky Barrier Diode (CPG-SBD) is proposed to improve the off-state characteristics of AlGaN/GaN schottky barrier diode with gated edge termination (GET-SBD) by adding low-K blocks in to the high-K passivation layer. The reverse leakage current of CPG-SBD can be reduced to 1.6 nA/mm by reducing the thickness of high-K dielectric under GET region to 5 nm, while the forward voltage and on-state resistance keep 1 V and 3.8 Ω mm, respectively. Breakdown voltage of CPG-SBDs can be improved by inducing discontinuity of the electric field at the high-K/low-K interface. The breakdown voltage of the optimized CPG-SBD with 4 blocks of low-K can reach 1084 V with anode to cathode distance of 5 μm yielding a high FOM of 5.9 GW/cm2. From the C-V simulation results, CPG-SBDs induce no parasitic capacitance by comparison of the GET-SBDs.

  4. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO{sub 2}/Si structure

    Energy Technology Data Exchange (ETDEWEB)

    Vexler, M. I., E-mail: shulekin@mail.ioffe.ru; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-05-15

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO{sub 2}, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  5. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

    Science.gov (United States)

    Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

    2018-04-01

    Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

  6. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    International Nuclear Information System (INIS)

    Liu Chaowen; Xu Jingping; Liu Lu; Lu Hanhan; Huang Yuan

    2016-01-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. (paper)

  7. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    Science.gov (United States)

    Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

    2016-02-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

  8. Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications

    Science.gov (United States)

    Du, Jiangfeng; Li, Zhenchao; Liu, Dong; Bai, Zhiyuan; Liu, Yang; Yu, Qi

    2017-11-01

    In this work, a vertical GaN p-n diode with a high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed and designed to achieve a record high breakdown voltage (BV) with a low specific on-resistance (Ron,sp). By introducing compound dielectric structure, the electric field near the p-n junction interface is suppressed due to the effects of high-K passivation layer, and a new electric field peak is induced into the n-type drift region, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in GaN p-n diode becomes more uniform and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN CD-VGD with a BV of 10650 V and a Ron,sp of 14.3 mΩ cm2, resulting in a record high figure-of-merit of 8 GW/cm2.

  9. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    International Nuclear Information System (INIS)

    Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

    2007-01-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

  10. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    Science.gov (United States)

    Yuan, C. L.; Chan, M. Y.; Lee, P. S.; Darmawan, P.; Setiawan, Y.

    2007-04-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al2O3 nanocrystals embedded in amorphous Lu2O3 high k dielectric using pulsed laser ablation. The mean size and density of the Al2O3 nanocrystals are estimated to be about 5 nm and 7x1011 cm-2, respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical.

  11. Development of High-k Dielectric for Antimonides and a sub 350 degree Celsius III-V pMOSFET Outperforming Germanium

    Science.gov (United States)

    2010-12-01

    Development of high-k dielectric for Antimonides and a sub 350ºC III-V pMOSFET outperforming Germanium Aneesh Nainani, Toshifumi Irisawa, Ze Yuan...dielectric for Antimonides and a sub 350degreeC III-V pMOSFET outperforming Germanium 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...area etch HCl based clean + 100 cyl. ALD Al2O3 @ 300ºC (~10nm) as gate dielectric Aluminum evaporation + Gate patterning Be implant(9e14dose/10keV)+S

  12. From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Sipe, John E.

    2014-01-01

    of the structure by a generalized resonance pole of a reflection coefficient and using Bloch’s theorem, we derive analytical expressions for the band of large-wave-vector propagating solutions. We apply our formalism to determine the high- k band existence in two important cases: the well-known metal...... and explore the range of parameteres for which this is possible, confirming the prospects of using graphene for materials with hyperbolic dispersion. The approach is applicable to a large variety of structures, such as continuous or structured microwave, terahertz, and optical metamaterials....

  13. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-03-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  14. 2-D modeling and analysis of short-channel behavior of a front high- K gate stack triple-material gate SB SON MOSFET

    Science.gov (United States)

    Banerjee, Pritha; Kumari, Tripty; Sarkar, Subir Kumar

    2018-02-01

    This paper presents the 2-D analytical modeling of a front high- K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson's equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

  15. BE-SONOS flash memory along with metal gate and high-k dielectrics in tunnel barrier and its impact on charge retention dynamics

    Science.gov (United States)

    Jain, Sonal; Gupta, Deepika; Neema, Vaibhav; Vishwakarma, Santosh

    2016-03-01

    We investigate the effect of a high-k dielectric in the tunnel layer to improve the erase speed-retention trade-off. Here, the proposed stack in the tunnel layer is AlLaO3/HfAlO/SiO2. These proposed materials possess low valence band offset with high permittivity to improve both the erase speed and retention time in barrier engineered silicon-oxide-nitride-oxide-silicon (BE-SONOS). In the proposed structure HfAlO and AlLaO3 replace Si3N4 and the top SiO2 layer in a conventional oxide/nitride/oxide (ONO) tunnel stack. Due to the lower conduction band offset (CBO) and high permittivity of the proposed material in the tunnel layer, it offers better program/erase (P/E) speed and retention time. In this work the gate length is also scaled down from 220 to 55 nm to observe the effect of high-k materials while scaling, for the same equivalent oxide thickness (EOT). We found that the scaling down of the gate length has a negligible impact on the memory window of the devices. Hence, various investigated tunnel oxide stacks possess a good memory window with a charge retained up to 87.4% (at room temperature) after a period of ten years. We also examine the use of a metal gate instead of a polysilicon gate, which shows improved P/E speed and retention time.

  16. Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

    Science.gov (United States)

    Chosei, Naoya; Itoh, Eiji

    2018-02-01

    We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

  17. BE-SONOS flash memory along with metal gate and high-k dielectrics in tunnel barrier and its impact on charge retention dynamics

    International Nuclear Information System (INIS)

    Jain, Sonal; Neema, Vaibhav; Gupta, Deepika; Vishwakarma, Santosh

    2016-01-01

    We investigate the effect of a high-k dielectric in the tunnel layer to improve the erase speed-retention trade-off. Here, the proposed stack in the tunnel layer is AlLaO 3 /HfAlO/SiO 2 . These proposed materials possess low valence band offset with high permittivity to improve both the erase speed and retention time in barrier engineered silicon-oxide-nitride-oxide-silicon (BE-SONOS). In the proposed structure HfAlO and AlLaO 3 replace Si 3 N 4 and the top SiO 2 layer in a conventional oxide/nitride/oxide (ONO) tunnel stack. Due to the lower conduction band offset (CBO) and high permittivity of the proposed material in the tunnel layer, it offers better program/erase (P/E) speed and retention time. In this work the gate length is also scaled down from 220 to 55 nm to observe the effect of high-k materials while scaling, for the same equivalent oxide thickness (EOT). We found that the scaling down of the gate length has a negligible impact on the memory window of the devices. Hence, various investigated tunnel oxide stacks possess a good memory window with a charge retained up to 87.4% (at room temperature) after a period of ten years. We also examine the use of a metal gate instead of a polysilicon gate, which shows improved P/E speed and retention time. (paper)

  18. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  19. Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET

    Science.gov (United States)

    Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Kevin J.

    2017-12-01

    Remote N2 plasma treatment is explored as a surface functionalization technique to deposit ultrathin high-k dielectric on single-layer MoS2. The ultrathin dielectric is used as a tunneling contact layer, which also serves as an interfacial layer below the gate region for fabricating top-gate MoS2 metal–oxide–semiconductor field-effect transistors (MOSFETs). The fabricated devices exhibited small hysteresis and mobility as high as 14 cm2·V‑1·s‑1. The contact resistance was significantly reduced, which resulted in the increase of drain current from 20 to 56 µA/µm. The contact resistance reduction can be attributed to the alleviated metal–MoS2 interface reaction and the preserved conductivity of MoS2 below the source/drain metal contact.

  20. Effects of the TiO2 high-k insulator material on the electrical characteristics of GaAs based Schottky barrier diodes

    Science.gov (United States)

    Zellag, S.; Dehimi, L.; Asar, T.; Saadoune, A.; Fritah, A.; Özçelik, S.

    2018-01-01

    The effects of the TiO2 high-k insulator material on Au/n-GaAs/Ti/Au Schottky barrier diodes have been studied by means of the numerical simulation and experimental results at room temperature. The Atlas-Silvaco-TCAD numerical simulator has been used to explain the behavior of different physical phenomena of Schottky diode. The experimental values of ideality factor, barrier height, and series resistance have been determined by using the various techniques such as Cheung's method, forward bias ln I- V and reverse capacitance-voltage behaviors. The experimental ideality factor and barrier height values have been found to be 4.14 and 0.585 eV for Au/n-GaAs/Ti/Au Schottky barrier diode and 4.00 and 0.548 eV for that structure with 16 nm thick TiO2 film and 3.92, 0.556 eV with 100 nm thick TiO2 film. The diodes show a non-ideal current-voltage behavior that of the ideality factor so far from unity. The extraction of N ss interface distribution profile as a function of E c -E ss is made using forward-bias I- V measurement by considering the bias dependence of ideality factor, the effective barrier height, and series resistance for Schottky barrier diodes. The N ss calculated values with consideration of the series resistance are lower than the calculated ones without series resistance. The current-voltage results of diodes reveal an abnormal increase in leakage current with an increase in thickness of high-k interfacial insulator layer. However, the simulation agrees in general with the experimental results.

  1. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  2. Electron Scale Turbulence and Transport in an NSTX H-mode Plasma Using a Synthetic Diagnostic for High-k Scattering Measurements

    Science.gov (United States)

    Ruiz Ruiz, Juan; Guttenfelder, Walter; Loureiro, Nuno; Ren, Yang; White, Anne; MIT/PPPL Collaboration

    2017-10-01

    Turbulent fluctuations on the electron gyro-radius length scale are thought to cause anomalous transport of electron energy in spherical tokamaks such as NSTX and MAST in some parametric regimes. In NSTX, electron-scale turbulence is studied through a combination of experimental measurements from a high-k scattering system and gyrokinetic simulations. Until now most comparisons between experiment and simulation of electron scale turbulence have been qualitative, with recent work expanding to more quantitative comparisons via synthetic diagnostic development. In this new work, we propose two alternate, complementary ways to perform a synthetic diagnostic using the gyrokinetic code GYRO. The first approach builds on previous work and is based on the traditional selection of wavenumbers using a wavenumber filter, for which a new wavenumber mapping was implemented for general axisymmetric geometry. A second alternate approach selects wavenumbers in real-space to compute the power spectra. These approaches are complementary, and recent results from both synthetic diagnostic approaches applied to NSTX plasmas will be presented. Work supported by U.S. DOE contracts DE-AC02-09CH11466 and DE-AC02-05CH11231.

  3. The evolution of Neoproterozoic magmatism in Southernmost Brazil: shoshonitic, high-K tholeiitic and silica-saturated, sodic alkaline volcanism in post-collisional basins

    Directory of Open Access Journals (Sweden)

    Sommer Carlos A.

    2006-01-01

    Full Text Available The Neoproterozoic shoshonitic and mildly alkaline bimodal volcanism of Southernmost Brazil is represented by rock assemblages associated to sedimentary successions, deposited in strike-slip basins formed at the post-collisional stages of the Brasilian/Pan-African orogenic cycle. The best-preserved volcano sedimentary associations occur in the Camaquã and Campo Alegre Basins, respectively in the Sul-riograndense and Catarinense Shields and are outside the main shear belts or overlying the unaffected basement areas. These basins are characterized by alternation of volcanic cycles and siliciclastic sedimentation developed dominantly on a continental setting under subaerial conditions. This volcanism and the coeval plutonism evolved from high-K tholeiitic and calc-alkaline to shoshonitic and ended with a silica-saturated sodic alkaline magmatism, and its evolution were developed during at least 60 Ma. The compositional variation and evolution of post-collisional magmatism in southern Brazil are interpreted as the result mainly of melting of a heterogeneous mantle source, which includes garnet-phlogopite-bearing peridotites, veined-peridotites with abundant hydrated phases, such as amphibole, apatite and phlogopite, and eventually with the addition of an asthenospheric component. The subduction-related metasomatic character of post-collisional magmatism mantle sources in southern Brazil is put in evidence by Nb-negative anomalies and isotope features typical of EM1 sources.

  4. 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

    Energy Technology Data Exchange (ETDEWEB)

    García, H., E-mail: hecgar@ele.uva.es [Departamento de Electricidad y Electrónica, ETSI Telecomunicación, Universidad de Valladolid, 47011 Valladolid (Spain); Castán, H.; Dueñas, S.; Bailón, L. [Departamento de Electricidad y Electrónica, ETSI Telecomunicación, Universidad de Valladolid, 47011 Valladolid (Spain); Campabadal, F.; Rafí, J.M.; Zabala, M.; Beldarrain, O. [Institut de Microelectrònica de Barcelona (IMB-CNM), CSIC, Campus UAB, 08193 Bellaterra (Spain); Ohyama, H.; Takakura, K.; Tsunoda, I. [Department of Electronic Engineering, Kumamoto National College of Technology, Kumamoto 861-1102 (Japan)

    2013-05-01

    2 MeV electron irradiation effects on the electrical properties of Al{sub 2}O{sub 3} and HfO{sub 2}-based metal–insulator–semiconductor capacitors have been studied. High-k dielectrics were directly grown on silicon by atomic layer deposition. Capacitors were exposed to three different electron irradiation doses of 0.025, 0.25 and 2.5 MGy. Capacitance–voltage, deep-level transient spectroscopy, conductance transients, flat-band voltage transients and current–voltage techniques were used to characterize the defects induced or activated by irradiation on the dielectric bulk and on the interface with silicon substrate. In all cases, positive charge is trapped in the dielectric bulk after irradiation indicating the existence of hole traps in the dielectric. When the samples are exposed to 2 MeV electron beam (e-beam) irradiation, electron–hole pairs are created and holes are then captured by the hole traps. Insulator/semiconductor interface quality slightly improves for low irradiation doses, but it is degraded for high doses. Irradiation always degrades the dielectric layers in terms of gate leakage current: the trapped holes are mobile charge which can contribute to leakage current by hopping from trap to trap. - Highlights: ► Positive charge accumulates inside dielectrics after electron irradiation. ► Irradiation improves oxide/semiconductor interface for low doses. ► Irradiation increases gate leakage current.

  5. Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

    International Nuclear Information System (INIS)

    Kim, Seonghyun; Park, Jubong; Jung, Seungjae; Lee, Wootae; Shin, Jungho; Hwang, Hyunsang; Lee, Daeseok; Woo, Jiyong; Choi, Godeuni

    2012-01-01

    In this study, we propose a new and effective methodology for improving the resistive-switching performance of memory devices by high-pressure hydrogen annealing under ambient conditions. The reduction effect results in the uniform creation of oxygen vacancies that in turn enable forming-free operation and afford uniform switching characteristics. In addition, H + and mobile hydroxyl (OH − ) ions are generated, and these induce fast switching operation due to the higher mobility compared to oxygen ions. Defect engineering, specifically, the introduction of hydrogen atom impurities, improves the device performance for metal–oxide-based resistive-switching random access memory devices. (paper)

  6. Immobilization mechanisms of deoxyribonucleic acid (DNA) to hafnium dioxide (HfO2) surfaces for biosensing applications.

    Science.gov (United States)

    Fahrenkopf, Nicholas M; Rice, P Zachary; Bergkvist, Magnus; Deskins, N Aaron; Cady, Nathaniel C

    2012-10-24

    Immobilization of biomolecular probes to the sensing substrate is a critical step for biosensor fabrication. In this work we investigated the phosphate-dependent, oriented immobilization of DNA to hafnium dioxide surfaces for biosensing applications. Phosphate-dependent immobilization was confirmed on a wide range of hafnium oxide surfaces; however, a second interaction mode was observed on monoclinic hafnium dioxide. On the basis of previous materials studies on these films, DNA immobilization studies, and density functional theory (DFT) modeling, we propose that this secondary interaction is between the exposed nucleobases of single stranded DNA and the surface. The lattice spacing of monoclinic hafnium dioxide matches the base-to-base pitch of DNA. Monoclinic hafnium dioxide is advantageous for nanoelectronic applications, yet because of this secondary DNA immobilization mechanism, it could impede DNA hybridization or cause nonspecific surface intereactions. Nonetheless, DNA immobilization on polycrystalline and amorphous hafnium dioxide is predominately mediated by the terminal phosphate in an oriented manner which is desirable for biosensing applications.

  7. Numeric modeling of HfO2 neutron flux sensor parameters during sensor burnup in the RBMK-1500 reactor

    International Nuclear Information System (INIS)

    Jurkevicius, A.; Remeikis, V.

    2001-01-01

    The isotopic composition of hafnium in the radial neutron flux sensor of the RBMK-1500 reactor, the rates of the neutron absorption on Hf isotopes and the neutron spectrum in the sensor were numerically modeled. The sequence SAS2 (Shielding Analysis Sequence) from the package SCALE 4.3 was used for calculations. It has been obtained that the main neutron absorber 167 Er isotope practically burns up completely at the 18 MW d/kgU burnup depth, and at that time the capture rate of thermal neutrons in erbium decreases ten-fold. The average neutron flux density was calculated 7.6*10 13 neutrons. Cm -2 S -1 in the RBMK-1500 reactor grating, when the nuclear fuel enriched with 235 U by 2.4% and with Er by 0.4% is used in a fuel assembly. When the sensor burnup reaches 28 MW d/kgU, the neutron absorption rate of 178 Hf exceeds the rate of 177 Hf. The overall neutron absorption rate in hafnium decreases 2.53 times due to the sensor burnup to 56 MW d/kgU. The corrective factors ξ d (I) at different integral flux I of the sensors were calculated. The obtained dependence ξ d (I) calculated numerically was compared to the experimental one determined by processing repeated calibration results of Hf sensors in RBMK-1500 reactors, as well as compared to the theoretical one currently used in the Ignalina NPP special mathematical algorithms. (author)

  8. Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor

    Science.gov (United States)

    Li, Yi; Yin, Kang-Sheng; Zhang, Mei-Yun; Cheng, Long; Lu, Ke; Long, Shi-Bing; Zhou, Yaxiong; Wang, Zhuorui; Xue, Kan-Hao; Liu, Ming; Miao, Xiang-Shui

    2017-11-01

    Memristors are attracting considerable interest for their prospective applications in nonvolatile memory, neuromorphic computing, and in-memory computing. However, the nature of resistance switching is still under debate, and current fluctuation in memristors is one of the critical concerns for stable performance. In this work, random telegraph noise (RTN) as the indication of current instabilities in distinct resistance states of the Pt/Ti/HfO2/W memristor is thoroughly investigated. Standard two-level digital-like RTN, multilevel current instabilities with non-correlation/correlation defects, and irreversible current transitions are observed and analyzed. The dependence of RTN on the resistance and read bias reveals that the current fluctuation depends strongly on the morphology and evolution of the conductive filament composed of oxygen vacancies. Our results link the current fluctuation behaviors to the evolution of the conductive filament and will guide continuous optimization of memristive devices.

  9. Effects of pinacidil on contractile proteins in high K(+)-treated intact, and in beta-escin-treated skinned smooth muscle of the rabbit mesenteric artery.

    Science.gov (United States)

    Itoh, T.; Suzuki, S.; Kuriyama, H.

    1991-01-01

    1. The effects of pinacidil were investigated on changes in cellular Ca2+ concentration ([Ca2+]i) and tension in intact and chemically skinned smooth muscle strips of the rabbit mesenteric artery. 2. High K+ (128 mM) produced a large phasic followed by a tonic increase in [Ca2+]i and tension in intact muscle strips. Pinacidil at 10 microM but not 1 microM, inhibited the phasic and tonic contractions induced by 128 mM K+ without a corresponding change in [Ca2+]i. 3. In beta-escin-treated skinned smooth muscle, the minimum Ca2+ concentration that produced contraction was 0.1 microM and the maximum contraction was obtained at 10 microM. Pinacidil at 10 microM but not 1 microM, shifted the pCa-tension relation curve to the right and also inhibited the maximum contraction induced by Ca2+. The concentrations of Ca2+ required for half maximal tension were 0.9 microM in control and 1.5 microM in the presence of 10 microM pinacidil. Calmodulin (2 microM) increased the contraction induced by 0.3 microM Ca2+ (but not by 10 microM Ca2+) in the skinned strips. Pinacidil (10 microM) inhibited the contraction induced by 0.3 microM or 10 microM Ca2+ in the presence of 2 microM calmodulin. 4. Noradrenaline (NA, 10 microM) with guanosine triphosphate (GTP, 3 microM), guanosine 5'-O-(3-thiotriphosphate) (GTP gamma S, 3 microM) or 12-O-tetradecanoylphorbol-13-acetate (TPA, 0.1 microM) all enhanced the contraction induced by 0.3 microM Ca2+. Pinacidil (10 microM) inhibited the contraction induced by 0.3 microM Ca2+ more strongly in the presence of the above agents than in their absence.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:1933133

  10. High-K granites of the Rum Jungle Complex, N-Australia: Insights into the Late Archean crustal evolution of the North Australian Craton

    Science.gov (United States)

    Drüppel, K.; McCready, A. J.; Stumpfl, E. F.

    2009-08-01

    The Late Archean (c. 2.54-2.52 Ga) high-K granitoids of the Rum Jungle Complex, Northern Australia, display the igneous mineral assemblage of K-feldspar, quartz, plagioclase, biotite, and magnetite, and accessories such as zircon, monazite, titanite, allanite, apatite, and ilmenite. The granites underwent a variably severe greenschist facies alteration and associated deformation during the Barramundi Orogeny (1.88-1.85 Ga). The K-rich granitoids have variable compositions, mainly comprising syenogranite and quartz-monzonite. They can be subdivided into two major groups, (1) felsic granites and (2) intermediate to felsic granites, quartz-monzonites, and diorite. The felsic group (69-76 wt.% SiO 2) shares many features with typical Late Archean potassic granites. They are K- and LILE-rich and show marked depletion in Sr and Eu and the high field strength elements (HFSE), particularly Nb and Ti, relative to LILE and LREE. Compared to the average upper crust they have anomalously high Th (up to 123 ppm) and U (up to 40 ppm). The intermediate to felsic group (56-69 wt.% SiO 2) differs from the felsic group in having weakly lower Th and U but higher Mg#, Ti, Ba, Sr, Ni, Cr and REE, with a less pronounced negative Eu anomaly. This group displays well-defined trends in Harker diagrams, involving a negative correlation of Si with Sr, Ca, Na, and P whereas K, Rb, and Ba increase in the same direction, suggesting fractional crystallization of feldspar was more prominent than in the felsic suite. The mineralogical and geochemical characteristics of the felsic group are consistent with granite formation by intracrustal melting of plagioclase-rich igneous protoliths, probably of tonaltic to granodioritic composition, at moderate crustal levels. The intermediate to felsic granites, on the other hand, appear to be the products of mantle-crust interaction, possibly by melting of or mixing with more mafic igneous rocks. As evidenced by the presence of older inherited zircons crustal

  11. Engineering of tunnel barrier for highly integrated nonvolatile memory applications

    Science.gov (United States)

    You, Hee-Wook; Son, Jung-Woo; Cho, Won-Ju

    2011-03-01

    In this paper, the engineered tunnel barrier technology is introduced by using the engineered tunnel barrier of VARIOT type (SiO2/Si3N4/SiO2) and CRESTED type (Si3N4/SiO2/Si3N4) with Si3N4 and high- k HfO2 layers as charge trapping layers, respectively. In addition, the high- k stacked VARIOT type of SiO2/HfO2/Al2O3 and Al2O3/HfO2/Al2O3 are compared with O/N/O tunnel barrier memory. As a result, the engineered tunnel barrier memory device showed excellent memory characteristics compared to the single SiO2 tunnel barrier memory device, such as very high P/E (program/erase) speed, good retention time and no degradation in endurance characteristics.

  12. Mid-Tertiary magmatism of the Toquima caldera complex and vicinity, Nevada: development of explosive high-K, calc-alkaline magmas in the central Great Basin, USA

    Science.gov (United States)

    Boden, David R.

    1994-04-01

    The Toquima caldera complex (TCC) lies near the middle of a west-northwest-trending belt of Oligocene to early Miocene volcanic rocks that stretches from southwestern Utah to west-central Nevada. Three overlapping to eccentrically nested calderas, called Moores Creek, Mt. Jefferson, and Trail Canyon, comprise the TCC. The calderas formed due to eruption of the tuffs of Moores Creek, Mt. Jefferson, and Trail Canyon at 27.2 Ma, 26.4 Ma, and 23.6 Ma, respectively. In total, 900+ km3 of magma was erupted from the complex. The high-silica rhyolite tuff of Moores Creek is the least strongly zoned in silica (78.0 76.8 wt% SiO2), and the tuff of Mt. Jefferson is the most strongly zoned (77.5 65.3 wt% SiO2); the tuff of Trail Canyon is moderately zoned (75.9 70.4 wt% SiO2). All eruptive products contain plagioclase, sanidine, quartz, biotite, Fe-Ti oxides, and accessory zircon, allanite, and apatite. Amphibole and clinopyroxene join the assemblage where compositions of bulk tuff are ≲ 74 wt% SiO2 and ≲ 70 wt% SiO2 respectively. Proportions and compositions of phenocrysts vary systematically with composition of the host tuff. Compositional zoning trends of sanidine and biotite suggest the presence of a high Ba-bearing magmatic component at depth or its introduction into the Mt. Jefferson and Trail Canyon magma chambers at a late stage of magmatic evolution. Rocks of the complex constitute a high-K, calc-alkaline series. Empirical data from other systems and results of published phase-equilibria and thermo-chemical studies suggest that magma erupted from the TCC was oxidized (˜ 1.5 to 2.0 log units above NNO), thermally zoned (˜ 700 730° C for high-silica rhyolite to ˜800 840° C for dacite) and water-rich (5.0 5.5. wt% H2O for highsilica rhyolite to ˜ 4.0 wt% H2O for dacite). Geologic relations and amphibole compositional data are consistent with total pressures of 1.5 to 2 kbars. Onset of mid-Tertiary magmatism in vicinity of the TCC began with intrusion of a small

  13. High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

    Science.gov (United States)

    Dong, B. W.; Miao, Jun; Han, J. Z.; Shao, F.; Yuan, J.; Meng, K. K.; Wu, Y.; Xu, X. G.; Jiang, Y.

    2018-03-01

    An novel heterostructure composed of multiferroic Bi(Fe0.95Cr0.05)O3 (BFCO) and high-K ZrO2 (ZO) layers is investigated. Ferroelectric and electrical properties of the BFZO/ZO heterostructure have been investigated. A pronounced bipolar ferroelectric resistive switching characteristic was achieved in the heterostructure at room temperature. Interestingly, the BFCO/ZO structures exhibit a reproducible resistive switching with a high On/Off resistance ratio ∼2×103 and long retention time. The relationship between polarization and band structure at the interface of BFCO/ZO bilayer under the positive and negative sweepings has been discussed. As a result, the BFCO/ZO multiferroic/high-K heterostructure with high On/Off resistance ratio and long retention characterizes, exhibits a potential in future nonvolatile memory application.

  14. Decorating TiO2 Nanowires with BaTiO3 Nanoparticles: A New Approach Leading to Substantially Enhanced Energy Storage Capability of High-k Polymer Nanocomposites.

    Science.gov (United States)

    Kang, Da; Wang, Guanyao; Huang, Yanhui; Jiang, Pingkai; Huang, Xingyi

    2018-01-31

    The urgent demand of high energy density and high power density devices has triggered significant interest in high dielectric constant (high-k) flexible nanocomposites comprising dielectric polymer and high-k inorganic nanofiller. However, the large electrical mismatch between polymer and nanofiller usually leads to earlier electric failure of the nanocomposites, resulting in an undesirable decrease of electrical energy storage capability. A few studies show that the introduction of moderate-k shell onto a high-k nanofiller surface can decrease the dielectric constant mismatch, and thus, the corresponding nanocomposites can withstand high electric field. Unfortunately, the low apparent dielectric enhancement of the nanocomposites and high electrical conductivity mismatch between matrix and nanofiller still result in low energy density and low efficiency. In this study, it is demonstrated that encapsulating moderate-k nanofiller with high-k but low electrical conductivity shell is effective to significantly enhance the energy storage capability of dielectric polymer nanocomposites. Specifically, using BaTiO 3 nanoparticles encapsulated TiO 2 (BaTiO 3 @TiO 2 ) core-shell nanowires as filler, the corresponding poly(vinylidene fluoride-co-hexafluoropylene) nanocomposites exhibit superior energy storage capability in comparison with the nanocomposites filled by either BaTiO 3 or TiO 2 nanowires. The nanocomposite film with 5 wt % BaTiO 3 @TiO 2 nanowires possesses an ultrahigh discharged energy density of 9.95 J cm -3 at 500 MV m -1 , much higher than that of commercial biaxial-oriented polypropylene (BOPP) (3.56 J cm -3 at 600 MV m -1 ). This new strategy and corresponding results presented here provide new insights into the design of dielectric polymer nanocomposites with high electrical energy storage capability.

  15. Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications

    Science.gov (United States)

    Tsai, Meng-Chen; Wang, Chin-I.; Chen, Yen-Chang; Chen, Yi-Ju; Li, Kai-Shin; Chen, Min-Cheng; Chen, Miin-Jang

    2018-03-01

    The electrical characteristics of FinFETs with a crystalline ZrO2/Al2O3 buffer layer gate stack and a crystalline ZrO2 high-K dielectric single layer, along with different fin widths and gate lengths, are investigated. Compared with the FinFETs with a single layer of crystalline ZrO2 high-K dielectric, the gate stack comprising the crystalline ZrO2/Al2O3 buffer layer on FinFETs leads to the suppression of short channel effects in terms of a low drain induced barrier lowering, reduced threshold voltage roll-off, and improved subthreshold swing. The ON/OFF current ratio and gate leakage current of FinFETs are also improved by the crystalline ZrO2/Al2O3 buffer layer gate stack. The improvement of electrical characteristics is ascribed to the reduced interface state density and gate leakage as a result of the insertion of an Al2O3 buffer layer between ZrO2 and Si. The results demonstrate that the crystalline ZrO2/Al2O3 buffer layer structure is a promising high-K gate stack for next-generation nanoscale transistors.

  16. Geochemistry, U-Pb geochronology, Sm-Nd and O isotopes of ca. 50 Ma long Ediacaran High-K Syn-Collisional Magmatism in the Pernambuco Alagoas Domain, Borborema Province, NE Brazil

    Science.gov (United States)

    Francisco da Silva Filho, Adejardo; de Pinho Guimarães, Ignez; Santos, Lucilene; Armstrong, Richard; Van Schmus, William Randall

    2016-07-01

    The Pernambuco Alagoas (PEAL) domain shows the major occurrence of granitic batholiths of the Borborema Province, NE Brazil, with Archean to Neoproterozoic range of Nd TDM model ages, giving clues on the role of granites during the Brasiliano orogeny. SHRIMP U/Pb zircon geochronological data for seven granitic intrusions of the PEAL domain divide the studied granitoids into three groups: 1) early-to syn-collision granitoids with crystallization ages ca. 635 Ma (Serra do Catú pluton), 2) syn-collision granitoids with crystallization ages 610-618 Ma (Santana do Ipanema, Água Branca, Mata Grande and Correntes plutons) and 3) late-to post-collision granitoids with ages of ca. 590 Ma (Águas Belas, and Cachoeirinha plutons). The intrusions of group 1 and 2, except the Mata Grande and Correntes plutons, show Nd TDM model ages ranging from 1.2 to 1.5 Ga, while the granitoids from group 3, and Mata Grande Pluton and Correntes plutons have Nd TDM model ages ranging from 1.7 to 2.2 Ga. The studied granitoids with ages <600 Ma are high-K, calc-alkaline, shoshonitic and those with ages <600 Ma are transitional high-K calc-alkaline to alkaline. The volcanic arc signatures associated with the Paleoproterozoic Nd TDM model ages are interpreted as inherited from the source rocks. The oldest ages and lower Nd TDM model ages are recorded from granitoids intruded in the southwest part of the PEAL domain, suggesting that these intrusions are associated with slab-tearing during convergence between the PEAL and the Sergipano domains. Zircon oxygen isotopic data in some of the studied plutons, together with the available Nd isotopic data suggest that the Brasiliano orogeny strongly reworked older crust, of either Paleoproterozoic or Tonian ages. The studied granitoids are coeval with calc-alkaline granitoids of the Transversal Zone and Sergipano domains and rare high-K calc-alkaline granitoids from the Transversal Zone domain. Such large volumes of high-K granitoids with

  17. Cenozoic high-K alkaline magmatism and associated Cu-Mo-Au mineralization in the Jinping-Fan Si Pan region, southeastern Ailao Shan-Red River shear zone, southwestern China-northwestern Vietnam

    Science.gov (United States)

    Tran, My Dung; Liu, Junlai; Nguyen, Quang Luat; Chen, Yue; Tang, Yuan; Song, Zhijie; Zhang, Zhaochong; Zhao, Zhidan

    2014-01-01

    The Jinping-Fan Si Pan (JFP) Cenozoic magmatic and Cu-Mo-Au metallogenic belt in the southeastern part of the Ailao Shan shear zone host the Tongchang, Chang‧an, Habo, and Chinh Sang Cu-Mo-Au deposits. These deposits form an integrated epithermal-porphyry regional mineralization system associated with 40-32 Ma high-K alkaline magmatism. The magmatic rocks in the belt have relatively low TiO2 (<0.73 wt%), P2O5 (<0.29 wt%), and FeO* (<4.99 wt%), and high Na2O (2.86-4.75 wt%) and K2O (4.01-7.98 wt%). They also have high contents of incompatible trace elements, and are enriched in LILE (Rb, Ba, K, Sr) and LREE. They have marked Nb, Ta, Ti and P depletion in primitive mantle-normalized spidergrams, and plot close to the EMII mantle field in the Sr-Nd isotopic diagram. These characteristics are similar to those of the Eocene high-K alkaline rocks along the northern Ailao Shan belt, eastern Tibet plateau. The sulfur and lead isotope analyses of sulfide minerals from both the ores and related magmatic rocks confirm the involvement of a magmatic ore fluid. The Cenozoic alkaline intrusions and Cu-Mo-Au mineralization in the JFP were formed prior to the initiation of left-lateral shearing along the Ailao Shan shear zone. The magmas appear to have been derived from enriched mantle, possibly with mixing of materials from the buried Tethyan oceanic lithosphere, and/or crust.

  18. High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

    Science.gov (United States)

    Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

    2018-01-01

    Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

  19. A highly symmetrical 10 transistor 2-read/write dual-port static random access memory bitcell design in 28 nm high-k/metal-gate planar bulk CMOS technology

    Science.gov (United States)

    Ishii, Yuichiro; Tanaka, Miki; Yabuuchi, Makoto; Sawada, Yohei; Tanaka, Shinji; Nii, Koji; Lu, Tien Yu; Huang, Chun Hsien; Sian Chen, Shou; Tse Kuo, Yu; Lung, Ching Cheng; Cheng, Osbert

    2018-04-01

    We propose a highly symmetrical 10 transistor (10T) 2-read/write (2RW) dual-port (DP) static random access memory (SRAM) bitcell in 28 nm high-k/metal-gate (HKMG) planar bulk CMOS. It replaces the conventional 8T 2RW DP SRAM bitcell without any area overhead. It significantly improves the robustness of process variations and an asymmetric issue between the true and bar bitline pairs. Measured data show that read current (I read) and read static noise margin (SNM) are respectively boosted by +20% and +15 mV by introducing the proposed bitcell with enlarged pull-down (PD) and pass-gate (PG) N-channel MOSs (NMOSs). The minimum operating voltage (V min) of the proposed 256 kbit 10T DP SRAM is 0.53 V in the TT process, 25 °C under the worst access condition with read/write disturbances, and improved by 90 mV (15%) compared with the conventional one.

  20. Effect of Charging Electron Exposure on 1064nm Transmission Through Bare Sapphire Optics and SiO2 over HfO2 AR-Coated Sapphire Optics

    Science.gov (United States)

    Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, James; Kauder, Lonny; Cavanaugh, John

    2010-01-01

    Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

  1. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

    Science.gov (United States)

    Wang, Yan; Liu, Qi; Long, Shibing; Wang, Wei; Wang, Qin; Zhang, Manhong; Zhang, Sen; Li, Yingtao; Zuo, Qingyun; Yang, Jianhong; Liu, Ming

    2010-01-01

    In this paper, the resistive switching characteristics in a Cu/HfO2:Cu/Pt sandwiched structure is investigated for multilevel non-volatile memory applications. The device shows excellent resistive switching performance, including good endurance, long retention time, fast operation speed and a large storage window (ROFF/RON>107). Based on the temperature-dependent test results, the formation of Cu conducting filaments is believed to be the reason for the resistance switching from the OFF state to the ON state. By integrating the resistive switching mechanism study and the device fabrication, different resistance values are achieved using different compliance currents in the program process. These resistance values can be easily distinguished in a large temperature range, and can be maintained over 10 years by extrapolating retention data at room temperature. The integrated experiment and mechanism studies set up the foundation for the development of high-performance multilevel RRAM.

  2. The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO2-Based RRAM and Applications for Pattern Recognition.

    Science.gov (United States)

    Zhou, Zheng; Liu, Chen; Shen, Wensheng; Dong, Zhen; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

    2017-12-01

    A binary spike-time-dependent plasticity (STDP) protocol based on one resistive-switching random access memory (RRAM) device was proposed and experimentally demonstrated in the fabricated RRAM array. Based on the STDP protocol, a novel unsupervised online pattern recognition system including RRAM synapses and CMOS neurons is developed. Our simulations show that the system can efficiently compete the handwritten digits recognition task, which indicates the feasibility of using the RRAM-based binary STDP protocol in neuromorphic computing systems to obtain good performance.

  3. Damage evaluation in graphene underlying atomic layer deposition dielectrics

    Science.gov (United States)

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

    2015-08-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors.

  4. High-k materials in the electrolyte/insulator/silicon configuration. Characterization and application in bio-electronics; Hoch-k-Materialien in der Elektrolyt/Isolator/Silizium-Konfiguration. Charakterisierung und Anwendung in der Bioelektronik

    Energy Technology Data Exchange (ETDEWEB)

    Wallrapp, F.

    2006-12-19

    In order to elicit action potentials in nerve cells adhered on electrodes, a certain current is required across the electrode. Electrochemical reactions may cause damage to cells and electrodes. This is evaded by using silicon electrodes which are insulated by a dielectric. In doing so, only capacitive current is flowing, and electrochemical are avoided. The aim of this work was to fabricate novel stimulation chips exhibiting an enhanced capacitance which render new biological applications possible. These chips were to be characterized and used for the stimulation of cells. The formerly used dielectric SiO{sub 2} was replaced by HfO{sub 2} and TiO{sub 2}, with both of them featuring a higher dielectric constant. They were deposited on the silicon substrate by ALD (atomic layer deposition). The chips were characterized in the electrolyte/insulator/semiconductor (EIS) configuration. Owing to the low leakage current of the EIS configuration, the characterization of the high-k materials was possible in more detail as compared to using a metallic top contact (MIS configuration). The voltage-dependent capacitances of the HfO{sub 2} films could be interpreted by means of a common metal/SiO{sub 2}/silicon system. In contrast, the TiO{sub 2} films exhibited interesting properties which could only be rationalized with the help of numerical calculations assuming free electrons in the TiO{sub 2}. The low-lying conduction band of TiO{sub 2} caused accumulation of electrons within the TiO{sub 2} for certain voltages, which led to an enhanced capacitance. The effects of high voltages, frequency, film thickness and interlayer composition were examined and brought into compliance with the model. The novel TiO{sub 2} stimulation devices featured a five-fold capacitance increase as compared to former SiO{sub 2} chips. Using them, two fundamental stimulation mechanisms were induced in HEK293 cells expressing the recombinant potassium channel Kv1.3: Opening of ion channels and

  5. Impedance Characterization of the Capacitive field-Effect pH-Sensor Based on a thin-Layer Hafnium Oxide Formed by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Michael LEE

    2014-05-01

    Full Text Available As a sensing element, silicon dioxide (SiO2 has been applied within ion-sensitive field effect transistors (ISFET. However, a requirement of increasing pH-sensitivity and stability has observed an increased number of insulating materials that obtain high-k gate being applied as FETs. The increased high-k gate reduces the required metal oxide layer and, thus, the fabrication of thin hafnium oxide (HfO2 layers by atomic layer deposition (ALD has grown with interest in recent years. This metal oxide presents advantageous characteristics that can be beneficial for the advancements within miniaturization of complementary metal oxide semiconductor (CMOS technology. In this article, we describe a process for fabrication of HfO2 based on ALD by applying water (H2O as the oxygen precursor. As a first, electrochemical impedance spectroscopy (EIS measurements were performed with varying pH (2-10 to demonstrate the sensitivity of HfO2 as a potential pH sensing material. The Nyquist plot demonstrates a high clear shift of the polarization resistance (Rp between pH 6-10 (R2 = 0.9986, Y = 3,054X + 12,100. At acidic conditions (between pH 2-10, the Rp change was small due to the unmodified oxide gate (R2 = 0.9655, Y = 2,104X + 4,250. These preliminary results demonstrate the HfO2 substrate functioned within basic to neutral conditions and establishes a great potential for applying HfO2 as a dielectric material for future pH measuring FET sensors.

  6. A physics-based potential and electric field model of a nanoscale ...

    Indian Academy of Sciences (India)

    nm between GaN and AlGaN and hafnium oxide (HfO2) as high-K gate dielectric having thickness tox = 10 nm and permittivity εox = 22 under the metal gate. Gate metal used is tantalum nitride (work function = 4.8 eV). Source and drain regions are modelled as heavily doped regions with concentration Nd+ = 1022 cm. −3.

  7. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures (Postprint)

    Science.gov (United States)

    2016-09-01

    reliable and compact devices. Attention has therefore been turned to magnetic/high-k dielectric bilayers such as Fe/MgO11,40, CoFe /MgO41,42, Co/GdOx20...VDF-TrFE)12, and CoFe /BST44, where the functionality is similar to recently proposed magnetic/high-k dielectric stacks but the associated volatile...polarization such as PZT, BiFeO3 , or doped HfO2. Our results thus provide a pathway towards ferroelectric switching of magnetism that could be useful for

  8. Investigation of capacitance characteristics in metal/high-k ...

    Indian Academy of Sciences (India)

    2017-08-21

    Aug 21, 2017 ... [25] Hoogeland D, Jinesh K B, Roozeboom F et al 2009 J. Appl. Phys. 106 114107. [26] Rodrigues M 2006 Caracterização elétrica de capacitores obtidos através de tecnologia ultra-submicrométrica Thése de doctorat (São Paulo: Universidade de São Paulo). [27] Streetman B G and Banerjee S 2000 Solid ...

  9. Nanostructured LnBaCo2O6− (Ln = Sm, Gd with layered structure for intermediate temperature solid oxide fuel cell cathodes

    Directory of Open Access Journals (Sweden)

    Augusto E. Mejía Gómez

    2017-04-01

    Full Text Available In this work, we present the combination of two characteristics that are beneficial for solid oxide fuel cell (SOFC cathodic performance in one material. We developed and evaluated for the first time nanostructured layered perovskites of formulae LnBaCo2O6-d with Ln = Sm and Gd (SBCO and GBCO, respectively as SOFC cathodes, finding promising electrochemical properties in the intermediate temperature range. We obtained those nanostructures by using porous templates to confine the chemical reagents in regions of 200-800 nm. The performance of nanostructured SBCO and GBCO cathodes was analyzed by electrochemical impedance spectroscopy technique under different operating conditions using Gd2O3-doped CeO2 as electrolyte. We found that SBCO cathodes displayed lower area-specific resistance than GBCO ones, because bulk diffusion of oxide ions is enhanced in the former. We also found that cathodes synthesized using smaller template pores exhibited better performance.

  10. Method to detect substances in a body and device to apply the method

    International Nuclear Information System (INIS)

    Voigt, H.

    1978-01-01

    The method and the measuring disposition serve to localize pellets doped with Gd 2 O 3 , lying between UO 2 pellets within a reactor fuel rod. The fuel rod is penetrating a homogeneous magnetic field generated between two pole shoes. The magnetic stray field caused by the doping substances is then measured by means of Hall probes (e.g. InAs) for quantitative discrimination from UO 2 . The position of the Gd 2 O 3 -doped pellets is determined by moving the fuel rod through the magnetic field in a direction perpendicular to the homogeneous field. The measuring signal is caused by the different susceptibility of Gd 2 O 3 with respect to UO 2 . (DG) [de

  11. Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications

    International Nuclear Information System (INIS)

    Yoon, Young Jun; Kang, Hee Sung; Seo, Jae Hwa; Kim, Young Jo; Bae, Jin Hyuk; Lee, Jung Hee; Kang, In Man; Cho, Eou Sik; Cho, Seong Jae

    2014-01-01

    We have investigated gallium-nitride (GaN)-based metal-oxide-semiconductor field-effect transistors(MOSFETs) having a recessed-gate structure for high-power applications. Recessed-gate GaN-based MOSFETs have been designed with a dual high-k dielectric structure to overcome low current drivability. Compared to recessed-gate GaN-based MOSFETs having a single gate dielectric with the same oxide thickness, recessed-gate GaN-based MOSFETs having a dual high-k dielectric composed of Al 2 O 3 and HfO 2 have achieved a high drain current (I D ) and transconductance (g m ) due to the high dielectric constant of HfO 2 . Also, because the dual high-k dielectric forms a high electron density in the channel layer with outstanding gate control capability, low channel resistances (R ch ) have obtained. In addition, we have studied the effect of the length between the gate and the drain (L gd ) on the on-resistance (R on ) to minimize the R on that is associated with power consumption and switching performance. Also, the electric field distribution of a device having a dual high-k dielectric has been examined with a field plate structure for high drive voltage. The proposed device was confirmed to be a remarkable candidate for switching devices in high-power applications.

  12. Effect of Dielectric Interface on the Performance of MoS2Transistors.

    Science.gov (United States)

    Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

    2017-12-27

    Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

  13. Sr and Nd isotopic signature of the high-K calc-alkaline magmatism of the central Ribeira belt: the Sao Pedro Granite in Lumiar, RJ; Assinatura isotopica de Sr e Nd do magmatismo calcio-alcalino de alto-K na Faixa Ribeira central: o exemplo do Granito Sao Pedro em Lumiar, RJ

    Energy Technology Data Exchange (ETDEWEB)

    Mendes, Julio Cezar; Medeiros, Silvia Regina de; Chaves, Eduardo Amorim, E-mail: julio@geologia.ufrj.br, E-mail: silvia@geologia.ufrj.br, E-mail: edupc2@yahoo.com.br [Departamento de Geologia, Universidade Federal do Rio de Janeiro, Rio de Janeiro (RJ) (Brazil)

    2011-09-15

    In the central-northern Ribeira belt there are many granitic to granodioritic bodies showing varied shape and size, characterizing a late- to post-collisional Ca-alkaline, cordilleran I-type province. The Sao Pedro Granite occurs in the mountain region of Rio de Janeiro State as small post-collisional bodies. It presents isotropic fabric, equigranular to seriate inequigranular texture, as well as local concentration of allanite, which gives discrete composition and texture variation to the rock. The granite has a high-K calcalkaline to alkali-calcic character and weakly peraluminous nature. Despite its short geochemical variation, high Ba, Zr and Th contents besides low concentrations of MgO and CaO are noticeable. High REE contents are associated with fractionated REE patterns showing strong negative Eu anomalies. A crustal origin for the granite can be assumed by its very negative and positive .Nd and .Sr values, respectively, as well as by 87Sr/86Sr initial ratios ranging from 0,718 to 0,740. TDM ages point to paleoproterozoic source, which agrees with geological time of intensive crust generation. (author)

  14. Research on c-HfO2 (0 0 1)/α -Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory

    Science.gov (United States)

    Lu, Wenjuan; Dai, Yuehua; Wang, Feifei; Yang, Fei; Ma, Chengzhi; Zhang, Xu; Jiang, Xianwei

    2017-12-01

    With the growing application of high-k dielectrics, the interface between HfO2 and Al2O3 play a crucial role in CTM devices. To clearly understand the interaction of the HfO-AlO interface at the atomic and electronic scale, the bonding feature, electronic properties and charge localized character of c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has been investigated by first principle calculations. The c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has adhesive energy about -1.754 J/m2, suggesting that this interface can exist stably. Through analysis of Bader charge and charge density difference, the intrinsic interfacial gap states are mainly originated from the OII and OIII types oxygen atoms at the interface, and only OIII type oxygen atoms can localized electrons effectively and are provided with good reliability during P/E cycles, which theoretically validate the experimental results that HfO2/Al2O3 multi-layered charge trapping layer can generate more effective traps in memory device. Furthermore, the influence of interfacial gap states during P/E cycles in the defective interface system have also been studied, and the results imply that defective system displays the degradation on the reliability during P/E cycles, while, the charge localized ability of interfacial states is stronger than intrinsic oxygen vacancy in the trapping layer. Besides, these charge localized characters are further explained by the analysis of the density of states correspondingly. In sum, our results compare well with similar experimental observations in other literatures, and the study of the interfacial gap states in this work would facilitate further development of interface passivation.

  15. Endurance Enhancement and High Speed Set/Reset of 50 nm Generation HfO2 Based Resistive Random Access Memory Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme

    Science.gov (United States)

    Higuchi, Kazuhide; Miyaji, Kousuke; Johguchi, Koh; Takeuchi, Ken

    2012-02-01

    This paper proposes a verify-programming method for the resistive random access memory (ReRAM) cell which achieves a 50-times higher endurance and a fast set and reset compared with the conventional method. The proposed verify-programming method uses the incremental pulse width with turnback (IPWWT) for the reset and the incremental voltage with turnback (IVWT) for the set. With the combination of IPWWT reset and IVWT set, the endurance-cycle increases from 48 ×103 to 2444 ×103 cycles. Furthermore, the measured data retention-time after 20 ×103 set/reset cycles is estimated to be 10 years. Additionally, the filamentary based physical model is proposed to explain the set/reset failure mechanism with various set/reset pulse shapes. The reset pulse width and set voltage correspond to the width and length of the conductive-filament, respectively. Consequently, since the proposed IPWWT and IVWT recover set and reset failures of ReRAM cells, the endurance-cycles are improved.

  16. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.

    Science.gov (United States)

    Liu, Xinke; Ang, Kah-Wee; Yu, Wenjie; He, Jiazhu; Feng, Xuewei; Liu, Qiang; Jiang, He; Dan Tang; Wen, Jiao; Lu, Youming; Liu, Wenjun; Cao, Peijiang; Han, Shun; Wu, Jing; Liu, Wenjun; Wang, Xi; Zhu, Deliang; He, Zhubing

    2016-04-22

    Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm(2)/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.

  17. Thermal effects on the Raman phonon of few-layer phosphorene

    Directory of Open Access Journals (Sweden)

    Zhi-Peng Ling

    2015-12-01

    Full Text Available Two-dimensional phosphorene is a promising channel material for next generation transistor applications due to its superior carrier transport property. Here, we report the influence of thermal effects on the Raman phonon of few-layer phosphorene formed on hafnium-dioxide (HfO2 high-k dielectric. When annealed at elevated temperatures (up to 200 °C, the phosphorene film was found to exhibit a blue shift in both the out-of-plane (A1g and in-plane (B2g and A2g phonon modes as a result of compressive strain effect. This is attributed to the out-diffusion of hafnium (Hf atoms from the underlying HfO2 dielectric, which compresses the phosphorene in both the zigzag and armchair directions. With a further increase in thermal energy beyond 250 °C, strain relaxation within phosphorene eventually took place. When this happens, the phosphorene was unable to retain its intrinsic crystallinity prior to annealing, as evident from the broadening of full-width at half maximum of the Raman phonon. These results provide an important insight into the impact of thermal effects on the structural integrity of phosphorene when integrated with high-k gate dielectric.

  18. Design of gate stacks for improved program/erase speed, retention and process margin aiming next generation metal nanocrystal memories

    International Nuclear Information System (INIS)

    Jang, Jaeman; Choi, Changmin; Min, Kyeong-Sik; Kim, Dong Myong; Kim, Dae Hwan; Lee, Jang-Sik; Lee, Jaegab

    2009-01-01

    In this work, gate stacks in metal nanocrystal (NC) memories, as promising next generation storage devices and their systems, are extensively investigated. A comparative analysis and characterization of the program/erase (P/E) speed, retention and the process margin of cobalt NC memories including high-k and bandgap engineering technologies are performed by using the technology computer-aided design (TCAD) simulation. It is shown that NC memory with high-k dielectric (HfO 2 ) has better performance in P/E speed and retention when the diameter of NC is below 5 nm. When the diameter is beyond 5 nm, on the other hand, the bandgap-engineered bottom oxide gate structure shows improved performance in P/E speed and retention. From the process margin perspective, as the permittivity of the dielectric gets larger, the limits of the diameter and the density of NCs allow the degree of freedom to become larger

  19. Oxide-based materials by atomic layer deposition

    Science.gov (United States)

    Godlewski, Marek; Pietruszka, Rafał; Kaszewski, Jarosław; Witkowski, Bartłomiej S.; Gierałtowska, Sylwia; Wachnicki, Łukasz; Godlewski, Michał M.; Slonska, Anna; Gajewski, Zdzisław

    2017-02-01

    Thin films of wide band-gap oxides grown by Atomic Layer Deposition (ALD) are suitable for a range of applications. Some of these applications will be presented. First of all, ALD-grown high-k HfO2 is used as a gate oxide in the electronic devices. Moreover, ALD-grown oxides can be used in memory devices, in transparent transistors, or as elements of solar cells. Regarding photovoltaics (PV), ALD-grown thin films of Al2O3 are already used as anti-reflection layers. In addition, thin films of ZnO are tested as replacement of ITO in PV devices. New applications in organic photovoltaics, electronics and optoelectronics are also demonstrated Considering new applications, the same layers, as used in electronics, can also find applications in biology, medicine and in a food industry. This is because layers of high-k oxides show antibacterial activity, as discussed in this work.

  20. Buffer layer investigations on MFIS capacitors consisting of ferroelectric poly[vinylidene fluoride trifluoroethylene

    International Nuclear Information System (INIS)

    Henkel, K; Seime, B; Paloumpa, I; Mueller, K; Schmeisser, D

    2010-01-01

    In this paper we present capacitance-voltage (CV) measurements on metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE] as ferroelectric layer and SiO 2 , Al 2 O 3 and HfO 2 as buffering insulator layer. In order to discuss our data in a quantitative manner we perform fits to the data based on a model proposed by Miller and McWorther. The improvement of the polarization values and subsequently its effect on the hysteresis of the CV curve by the successive shrinking of the buffer layer thickness and the following choice of a high-k buffer material is demonstrated. Our data underline that a saturated polarization of P[VDF/TrFE] cannot be controlled with a SiO 2 buffer layer and the insertion of a high-k buffer layer is essential for further improvements of the characteristics of MFIS stacks.

  1. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    International Nuclear Information System (INIS)

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  2. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    International Nuclear Information System (INIS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-01-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO 2 and ZrO 2 , which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10 11 cm −2 , respectively. The device with a structure Metal/ZrO 2 /InAs QDs/HfO 2 /GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10 −6 A/cm 2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO 2 deposition

  3. Towards the accurate electronic structure descriptions of typical high-constant dielectrics

    Science.gov (United States)

    Jiang, Ting-Ting; Sun, Qing-Qing; Li, Ye; Guo, Jiao-Jiao; Zhou, Peng; Ding, Shi-Jin; Zhang, David Wei

    2011-05-01

    High-constant dielectrics have gained considerable attention due to their wide applications in advanced devices, such as gate oxides in metal-oxide-semiconductor devices and insulators in high-density metal-insulator-metal capacitors. However, the theoretical investigations of these materials cannot fulfil the requirement of experimental development, especially the requirement for the accurate description of band structures. We performed first-principles calculations based on the hybrid density functionals theory to investigate several typical high-k dielectrics such as Al2O3, HfO2, ZrSiO4, HfSiO4, La2O3 and ZrO2. The band structures of these materials are well described within the framework of hybrid density functionals theory. The band gaps of Al2O3, HfO2, ZrSiO4, HfSiO4, La2O3 and ZrO2are calculated to be 8.0 eV, 5.6 eV, 6.2 eV, 7.1 eV, 5.3 eV and 5.0 eV, respectively, which are very close to the experimental values and far more accurate than those obtained by the traditional generalized gradient approximation method.

  4. Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications

    Directory of Open Access Journals (Sweden)

    C. H. Yu

    2015-01-01

    Full Text Available The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL and high k gate oxide HfO2 layer have been investigated in detail. The influences of Si IPL thickness, gate oxide HfO2 thickness, the doping depth, and concentration of source and drain layer on output and transfer characteristics of the MOSFET at fixed gate or drain voltages have been individually simulated and analyzed. The determination of the above parameters is suggested based on their effect on maximum drain current, leakage current, saturated voltage, and so forth. It is found that the channel length decreases with the increase of the maximum drain current and leakage current simultaneously. Short channel effects start to appear when the channel length is less than 0.9 μm and experience sudden sharp increases which make device performance degrade and reach their operating limits when the channel length is further lessened down to 0.5 μm. The results demonstrate the usefulness of short channel simulations for designs and optimization of next-generation electrical and photonic devices.

  5. Magnetic dipole moments of High-K isomeric states in Hf isotopes

    CERN Multimedia

    Walters, W; Nishimura, K; Bingham, C R

    2007-01-01

    It is proposed to make precision measurements of the magnetic moments of 5 multi-quasi-particle K-isomers in Hf nuclei by the Nuclear Magnetic Resonance of Oriented Nuclei (NMR/ON) technique using the NICOLE on-line nuclear orientation facility and exploiting the unique HfF$_{3}$ beams recently available at ISOLDE. Results will be used to extract single-particle and collective g-factors of the isomeric states and their excitations and to shed new light on their structure.

  6. Large-Area High Aspect Ratio Plasmonic Interference Lithography Utilizing a Single High-k Mode.

    Science.gov (United States)

    Chen, Xi; Yang, Fan; Zhang, Cheng; Zhou, Jing; Guo, L Jay

    2016-04-26

    Plasmonic lithography, which utilizes subwavelength confinement of surface plasmon polartion (SPP) waves, has the capability of breaking the diffraction limit and delivering high resolution. However, all previously reported results suffer from critical issues, such as shallow pattern depth and pattern nonuniformity even over small exposure areas, which limit the application of the technology. In this work, periodic patterns with high aspect ratios and a half-pitch of about 1/6 of the wavelength were achieved with pattern uniformity in square centimeter areas. This was accomplished by designing a special mask and photoresist (PR) system to select a single high spatial frequency mode and incorporating the PR into a waveguide configuration to ensure uniform light exposure over the entire depth of the photoresist layer. In addition to the experimental progress toward large-scale applications of plasmonic interference lithography, the general criteria of designing such an exposure system is also discussed, which can be used for nanoscale fabrication in this fashion for various applications with different requirements for wavelength, pitch, aspect ratio, and structure.

  7. Reflectors and resonators for high-k bulk Bloch plasmonic waves in multilayer hyperbolic metamaterials

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Lavrinenko, Andrei

    2012-01-01

    We propose proof-of-concept designs of Bragg reflectors and Fabry-Pe´rot resonators for large wave vector waves (Bloch bulk plasmon polaritons) in multilayer metal-dielectric hyperbolic metamaterials. The designs are based on hybrid multilayers having both subwavelength and wavelength-scale struc......We propose proof-of-concept designs of Bragg reflectors and Fabry-Pe´rot resonators for large wave vector waves (Bloch bulk plasmon polaritons) in multilayer metal-dielectric hyperbolic metamaterials. The designs are based on hybrid multilayers having both subwavelength and wavelength......-scale structuring. This multiscale approach is shown to be a promising platform for using bulk plasmonic waves in complex multilayer metamaterials as a new kind of information carriers....

  8. Voluminous Occurrence of High-K Dacites and Related Granites of ...

    African Journals Online (AJOL)

    This paper describes the in vitro evaluation of antibacterial activity of DNBH and its ruthenium complexes. All the synthesized compounds exhibited antibacterial activity against the Gram-positive bacteria namely Staphylococcus aureus at a conc of 100-25 mg/ml and Gram-negative bacteria such as Escherichia coli, ...

  9. LOW LEAKAGE NANOSCALED SOURCE AND DRAIN OVER INSULATOR FINFET WITH UNDERLAP AND HIGH K DIELECTRIC

    OpenAIRE

    SARIKA BUKKAWAR; NISHA SARWADE

    2012-01-01

    In this paper a Source and drain over Insulator (SDOI) FinFET structure in which S/D regions insulated from body by buried oxide with undoped underlap and Si3N4 as dielectric is studied and compared with SDOI FinFET with SiO2 as dielectric. An extensive simulation study and analysis of the effect of underlaps on SDOI FinFET has been performed using the TCAD Silvaco (DevEDIT, ATLAS). The simulations have revealed that the SDOI FinFET structures with underlaps and Si3N4 as dielectric improves s...

  10. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, Jean-Claude

    2009-01-01

    The electronic structure of binary titanate La2Ti2O7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La2Ti2O7 are determined as alpha(Ti) = 872...

  11. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, Jean-Claude

    2012-01-01

    The spectroscopic parameters and electronic structure of binary titanate Pr2Ti2O7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have...

  12. Understanding the Structure of High-K Gate Oxides - Oral Presentation

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Andre [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-25

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  13. Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

    Directory of Open Access Journals (Sweden)

    Chao-Te Liu

    2012-01-01

    Full Text Available The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1, a large current ratio (>103 and a low operation voltage (<6 V. Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

  14. Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

    Science.gov (United States)

    Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

    2018-05-01

    Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

  15. Electron spin resonance probing of point defects in Si/high-k structuresand functional oxides

    OpenAIRE

    Clémer, Katrijn

    2007-01-01

    Today, we want our devices based on semiconductor devices to be ever smaller, faster, more multi-functional, and, if possible, also cheaper. For years now industry has been able to meet these demands bringing e.g., tiny cell phones, MP3-players, photo and video cameras, and laptops on the market. The word 'nano' has even surpassed its scientific meaning (unit prefix) and became the magic word to sell electronic devices and even washing-powder. Up to present, the success of semiconduct...

  16. Strain relaxation near high-k/Si interface by post-deposition annealing

    Energy Technology Data Exchange (ETDEWEB)

    Emoto, T. [Toyota National College of Technology, 2-1 Eisei-cho, Toyota, Aichi 471-8525 (Japan)]. E-mail: emoto@toyota-ct.ac.jp; Akimoto, K. [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Yoshida, Y. [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Ichimiya, A. [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nabatame, T. [MIRAI-ASET, AIST Tsukuba West, Tsukuba, Ibaraki 305-8569 (Japan); Toriumi, A. [MIRAI-ASRC, AIST Tsukuba Central 4, Tsukuba, Ibaraki 305-8562 (Japan); University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2005-05-15

    We studied the effect of post-deposition annealing on a HfO{sub 2}/Si interface of by extremely asymmetric X-ray diffraction. Comparing the rocking curves before annealing the sample with those of the annealed sample, it is found that an interfacial layer with a density of 3 g/cm{sup 3} grows at the interface between the HfO{sub 2} layer and the substrate during post-deposition annealing. The wavelength dependency of the integrated intensities of the rocking curve for the as-deposited sample fluctuated with the observation position. This fluctuation was suppressed by annealing. From these results we concluded that the strain introduced into the substrate becomes homogeneous by annealing. Moreover, a quantitative estimation of the strain by curve fitting reveals the existence of compressive strain under the HfO{sub 2} layer.

  17. Enhancement of the chemical stability in confined δ-Bi2O3

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Andreasen, Jens Wenzel

    2015-01-01

    Bismuth-oxide-based materials are the building blocks for modern ferroelectrics1, multiferroics2, gas sensors3, light photocatalysts4 and fuel cells5,6. Although the cubic fluorite δ-phase of bismuth oxide (δ-Bi2O3) exhibits the highest conductivity of known solid-state oxygen ion conductors5, its...... instability prevents use at low temperature7–10. Here we demonstrate the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers of Er2O3-stabilized δ-Bi2O3 and Gd2O3-doped CeO2. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles...... at high temperature, usually unattainable for Bi2O3-based materials, is achieved. Even more interestingly, at low oxygen partial pressure the layered material shows anomalous high conductivity, equal or superior to pure δ-Bi2O3 in air. This suggests a strategy to design and stabilize new materials...

  18. Hafnia-rich mixed oxide ceramics of the system HfO2-ZrO2-TiO2 for heaters and heat exchangers in electrothermal thrusters: The effects of titania on selected electrical and mechanical properties of Hafnia-rich mixed oxides in the system Hafnia-Zirconia-Titania, volume 1

    Science.gov (United States)

    Staszak, Paul Russell; Wirtz, G. P.; Berg, M.; Brown, S. D.

    1988-01-01

    A study of the effects of titania on selected properties of hafnia-rich mixed oxides in the system hafnia-zirconia-titania (HZT) was made in the region 5 to 20 mol percent titania. The studied properties included electrical conductivity, thermal expansion, and fracture strength and toughness. The effects of titania on the properties were studied for the reduced state as well as the oxidized state of the sintered mixed oxides. X-ray analysis showed that the materials were not always single phase. The oxidized compositions went from being monoclinic solid solutions at low titania additions to having three phases (two monoclinic and a titanate phase) at high additions of titania. The reduced compositions showed an increasing cubic phase presence mixed with the monoclinic phase as titania was added. The electrical conductivity increased with temperature at approximately 0.1 mhos/cm at 1700 C for all compositions. The thermal expansion coefficient decreased with increasing titania as did the monoclinic to tetragonal transformation temperature. The fracture strength of the oxidized bars tended to decrease with the addition of titania owing to the presence of the second phase titania. The fracture strength of the reduced bars exhibited a minimum corresponding to a two-phase region of monoclinic and cubic phases. When the second phases were suppressed, the titania tended to increase the fracture strength slightly in both the oxidized and reduced states. The fracture toughness followed similar trends.

  19. Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal–oxide–nitride–oxide–silicon memory

    International Nuclear Information System (INIS)

    Liu, L.; Xu, J.P.; Chen, J.X.; Ji, F.; Huang, X.D.; Lai, P.T.

    2012-01-01

    A high-k gate stack structure with ultrathin HfON/SiO 2 as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to make a charge-trapping-type metal–oxide–nitride–oxide–silicon non-volatile memory device by employing in-situ sputtering method. The validity of the structure is examined and confirmed by transmission electron microscopy. The memory window, program/erase, endurance and retention properties are investigated and compared with similar gate stack structure with Si 3 N 4 /SiO 2 as DTL, HfO 2 as CSL and Al 2 O 3 as BL. Results show that a large memory window of 3.55 V at a program/erase (P/E) voltage of + 8 V/− 15 V, high P/E speed, and good endurance and retention characteristic can be achieved using the Au/ HfAlO/AlN/(HfON/SiO 2 )/Si gate stack structure. The main mechanisms lie in the enhanced electron injection through the ultrathin high-k HfON/SiO 2 DTL with suitable band offset, high trapping efficiency of the high-k AlN material, and effective blocking role of the high-k HfAlO BL. - Highlights: ► An Au/HfAlO/AlN/(HfON/SiO 2 )/Si high-k gate stack structure is proposed. ► A band-engineered dual tunneling layer (HfON/SiO 2 ) is proposed and prepared. ► A good trade-off among the memory characteristics is obtained. ► In-situ sputtering method is employed to fabricate the gate stack structure.

  20. Probing/Manipulating the Interfacial Atomic Bonding between High k Dielectrics and InGaAs for Ultimate CMOS

    Science.gov (United States)

    2015-04-24

    region of n-In0.53Ga0.47As MOSCAP. 15. SUBJECT TERMS CMOS, Magneto-optical imaging , Nanotechnology, Indium Gallium Arsenide 16...Nanotechnology, Indium Gallium Arsenide 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT Same as Report (SAR) 18. NUMBER OF PAGES 11 19a...structure of trimethyl- aluminum and water on an In0.2Ga0.8As(001) -4x2 surface: A high-resolution core-level photoemission study”, T. W. Pi, H. Y. Lin T

  1. Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sunwoo; Choi, Changhwan; Lee, Kilbock [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Cho, Joong Hwee [Department of Embedded Systems Engineering,University of Incheon, Incheon 406-722 (Korea, Republic of); Ko, Ki-Young [Korea Institute of Patent Information, Seoul, 146-8 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of)

    2012-10-30

    We report the effect of consecutive electrical stress on the performance of organic field effect transistors (OFETs). Sputtered aluminum oxide (Al{sub 2}O{sub 3}) and hafnium oxide (HfO{sub 2}) were used as gate oxide layers. After the electrical stress, the threshold voltage, which strongly depends on bulk defects, was remarkably shifted to the negative direction, while the other performance characteristics of OFETs such as on-current, transconductance and mobility, which are sensitive to interface defects, were slightly decreased. This result implies that the defects in the bulk layer are significantly affected compared to the defects in the interface layer. Thus, it is important to control the defects in the pentacene bulk layer in order to maintain the good reliabilities of pentacene devices. Those defects in HfO{sub 2} gate oxide devices were larger compared to those in Al{sub 2}O{sub 3} gate oxide devices.

  2. Engineering the propagation of high-k bulk plasmonic waves in multilayer hyperbolic metamaterials by multiscale structuring

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Lavrinenko, Andrei; Sipe, J. E.

    2013-01-01

    Propagation of large-wavevector bulk plasmonic waves in multilayer hyperbolic metamaterials (HMMs) with two levels of structuring is theoretically studied. It is shown that when the parameters of a subwavelength metal-dielectric multilayer (substructure) are modulated (superstructured) on a larger...

  3. The properties of a high K+-induced contraction in the ileal longitudinal and circular muscles of cat.

    Science.gov (United States)

    Shimizu, K; Hori, M; Mitsui, M; Hayashi, Y; Nakajyo, S; Urakawa, N

    1987-02-01

    Hypertonic 60 mM KCl (H 60K+) solution induced a phasic contraction followed by tonic one in the longitudinal (long.) and circular (circ.) muscles of cat ileum. Verapamil inhibited the tonic contraction in the long. or circ. muscle with IC50 of 2.0 X 10(-8) M or 1.0 X 10(-7) M, respectively. The sensitivity of the long. muscle to verapamil was higher than that of the circ. muscle. Ouabain (10(-5) M) increased or did not change the tonic contraction, and increased intracellular Na+ contents in the long. and circ. muscles in H 60K+ solution. Li+-substituted (1/5-1/2) solutions decreased the H 60K+-induced contraction in the long. muscle, but potentiated or did not change the contraction in the circ. one. The results with glucose removal, hypoxia, DNP application and a measurement of oxygen consumption showed that the H 60K+-induced contractions in the long. and circ. muscles are probably dependent on aerobic metabolism utilizing external glucose as well as endogenous substrates. In summary, properties of the H 60K+-induced contraction in the ileal long. of cat was not entirely similar to those of circ. muscles, but they were different from those of the ileal of other animal species and had some similarities to those of the guinea-pig portal vein.

  4. Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

    Science.gov (United States)

    Su, Wei-tao; Yang, Li; Li, Bin

    2011-01-01

    A new ternary rare oxide dielectric LaYbO3 film had been prepared on silicon wafers and quartz substrates by reactive sputtering method using a La-Yb metal target. A range of analysis techniques was performed to determine the optical band gap, thermal stability, and electrical property of the deposited samples. It was found the band gap of LaYbO3 film was about 5.8 eV. And the crystallization temperature for rapid thermal annealing (20 s) was between 900 and 950 °C. X-ray photoelectron spectroscopy results indicate the formation of the SiO2 and silicate in the interface between silicon wafer and LaYbO3 film. The dielectric constant is about 23 from the calculation of capacitance-voltage curve, which is comparable higher than previously reported La2O3 or Yb2O3 film.

  5. Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Sengupta, Amretashis; Sarkar, Chandan Kumar [Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700 032 (India); Requejo, Felix G, E-mail: amretashis@gmail.com [INIFTA, Departmento de Quimica and Departmento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC/67-1900, La Plata (Argentina)

    2011-10-12

    Here, we present a comparative theoretical study on stacked (multilayer) gate dielectric MOS memory devices, having a metallic/semiconducting carbon nanotube (CNT), silicon nanowire (Si NW) and fullerene (C60) embedded nitride layer acting as a floating gate. Two types of devices, one with HfO{sub 2}-SiO{sub 2} stack (stack-1) and the other with La{sub 2}O{sub 3}-SiO{sub 2} stack (stack-2) as the tunnel oxide were compared. We evaluated the effective barrier height, the dielectric constant and the effective electron mobility in the composite gate dielectric with the Maxwell-Garnett effective medium theory. Thereafter applying the WKB approximation, we simulated the Fowler-Nordheim (F-N) tunnelling/writing current and the direct tunnelling/leakage current in these devices. We evaluated the I-V characteristics, the charge decay and also the impact of CNT/Si NW aspect ratio and the volume fraction on the effective barrier height and the write voltage, respectively. We also simulated the write time, retention time and the erase time of these MOS devices. Based on the simulation results, it was concluded that the metallic CNT embedded stack-1 device offered the best performance in terms of higher F-N tunnelling current, lower direct tunnelling current and lesser write voltage and write time compared with the other devices. In case of direct tunnelling leakage and retention time it was found that the met CNT embedded stack-2 device showed better characteristics. For erasing, however, the C60 embedded stack-1 device showed the smallest erase time. When compared with earlier reports, it was seen that CNT, C60 and Si NW embedded devices all performed better than nanocrystalline Si embedded MOS non-volatile memories.

  6. Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone.

    Science.gov (United States)

    Cheng, Lanxia; Qin, Xiaoye; Lucero, Antonio T; Azcatl, Angelica; Huang, Jie; Wallace, Robert M; Cho, Kyeongjae; Kim, Jiyoung

    2014-08-13

    We present an Al2O3 dielectric layer on molybdenum disulfide (MoS2), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using TMA and ozone as precursors leads to the formation of uniform Al2O3 layers, in contrast to the incomplete coverage we observe when using TMA/H2O as precursors. Our Raman and X-ray photoelectron spectroscopy measurements indicate minimal variations in the MoS2 structure after ozone treatment at 200 °C, suggesting its excellent chemical resistance to ozone.

  7. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

    International Nuclear Information System (INIS)

    Rahi Shiromani Balmukund; Asthana Pranav; Ghosh Bahniman

    2014-01-01

    We propose a heterostructure junctionless tunnel field effect transistor (HJL-TFET) using AlGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates (named gate, gate1) with two different work functions (gate = 4.2 eV, gate1 = 5.2 eV respectively). The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10 −6 A/μm, the off current remains as low as 9.1 × 10 −14 A/μm. So I ON /I OFF ratio of ≃ 10 8 is achieved. Point subthreshold swing has also been reduced to a value of ≃ 41 mV/decade for TiO 2 gate material. (semiconductor devices)

  8. High-k dielectric composites of poly(2-cyanoethyl vinyl ether) and barium titanate for flexible electronics

    Czech Academy of Sciences Publication Activity Database

    Piana, Francesco; Pfleger, Jiří; Jambor, R.; Řičica, T.; Macák, J. M.

    2017-01-01

    Roč. 134, č. 37 (2017), s. 1-10, č. článku 45236. ISSN 0021-8995 R&D Projects: GA TA ČR(CZ) TE01020022; GA MŠk(CZ) LO1507 Institutional support: RVO:61389013 Keywords : composites * dielectric properties * nanocrystals Subject RIV: CG - Electrochemistry OBOR OECD: Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) Impact factor: 1.860, year: 2016

  9. High-k Gate Dielectric Films Studied by Extremely Asymmetric X-ray Diffraction and X-ray Photoelectron Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Yuki [Graduate School of Engineering, Nagoya University, Nagoya, 464-8603 (Japan); Akimoto, Koichi [Graduate School of Engineering, Nagoya University, Nagoya, 464-8603 (Japan); Yoshida, Hironori [Graduate School of Engineering, Nagoya University, Nagoya, 464-8603 (Japan); Emoto, Takashi [Toyota National College of Technology, Toyota, Aichi 471-8525 (Japan); Kobayashi, Daisuke [Institute of Space and Astronautical Science, Sagamihara, Kanagawa 229-8510 (Japan); Hirose, Kazuyuki [Institute of Space and Astronautical Science, Sagamihara, Kanagawa 229-8510 (Japan)

    2007-10-15

    We studied HfAlO{sub x}(N)/SiO{sub 2}/Si films which were fabricated by the layer-by-layer deposition and annealing (LL-D and A) method with different annealing conditions. In this time, in-situ annealing was performed at various temperatures in an NH{sub 3} ambient. In addition, post-deposition annealing (PDA) was performed for some samples. For each sample, the interfacial lattice strain was evaluated using extremely asymmetric X-ray diffraction and the local dielectric constant near the Al atoms was measured by X-ray photoelectron spectroscopy (XPS). Observation of the strain field was done by measuring the X-ray rocking curve of the Si 113 reflection of the Si (001) substrate under grazing incidence conditions. It was found that in the case of the samples without PDA, for higher in-situ annealing temperatures compressive strain is introduced and the local dielectric constant becomes lower. For the samples with PDA, the differences of the lattice strain and the local dielectric constant are small for different in-situ annealing temperatures.

  10. Single-step synthesis of Er3+ and Yb3+ ions doped molybdate/Gd2O3 core–shell nanoparticles for biomedical imaging

    Science.gov (United States)

    Kamińska, Izabela; Elbaum, Danek; Sikora, Bożena; Kowalik, Przemysław; Mikulski, Jakub; Felcyn, Zofia; Samol, Piotr; Wojciechowski, Tomasz; Minikayev, Roman; Paszkowicz, Wojciech; Zaleszczyk, Wojciech; Szewczyk, Maciej; Konopka, Anna; Gruzeł, Grzegorz; Pawlyta, Mirosława; Donten, Mikołaj; Ciszak, Kamil; Zajdel, Karolina; Frontczak-Baniewicz, Małgorzata; Stępień, Piotr; Łapiński, Mariusz; Wilczyński, Grzegorz; Fronc, Krzysztof

    2018-01-01

    Nanostructures as color-tunable luminescent markers have become major, promising tools for bioimaging and biosensing. In this paper separated molybdate/Gd2O3 doped rare earth ions (erbium, Er3+ and ytterbium, Yb3+) core–shell nanoparticles (NPs), were fabricated by a one-step homogeneous precipitation process. Emission properties were studied by cathodo- and photoluminescence. Scanning electron and transmission electron microscopes were used to visualize and determine the size and shape of the NPs. Spherical NPs were obtained. Their core–shell structures were confirmed by x-ray diffraction and energy-dispersive x-ray spectroscopy measurements. We postulated that the molybdate rich core is formed due to high segregation coefficient of the Mo ion during the precipitation. The calcination process resulted in crystallization of δ/ξ (core/shell) NP doped Er and Yb ions, where δ—gadolinium molybdates and ξ—molybdates or gadolinium oxide. We confirmed two different upconversion mechanisms. In the presence of molybdenum ions, in the core of the NPs, Yb3+–{{{{MoO}}}4}2- (∣2F7/2, 3T2〉) dimers were formed. As a result of a two 980 nm photon absorption by the dimer, we observed enhanced green luminescence in the upconversion process. However, for the shell formed by the Gd2O3:Er, Yb NPs (without the Mo ions), the typical energy transfer upconversion takes place, which results in red luminescence. We demonstrated that the NPs were transported into cytosol of the HeLa and astrocytes cells by endocytosis. The core–shell NPs are sensitive sensors for the environment prevailing inside (shorter luminescence decay) and outside (longer luminescence decay) of the tested cells. The toxicity of the NPs was examined using MTT assay.

  11. Single-step synthesis of Er3+and Yb3+ions doped molybdate/Gd2O3core-shell nanoparticles for biomedical imaging.

    Science.gov (United States)

    Kamińska, Izabela; Elbaum, Danek; Sikora, Bożena; Kowalik, Przemysław; Mikulski, Jakub; Felcyn, Zofia; Samol, Piotr; Wojciechowski, Tomasz; Minikayev, Roman; Paszkowicz, Wojciech; Zaleszczyk, Wojciech; Szewczyk, Maciej; Konopka, Anna; Gruzeł, Grzegorz; Pawlyta, Mirosława; Donten, Mikołaj; Ciszak, Kamil; Zajdel, Karolina; Frontczak-Baniewicz, Małgorzata; Stępień, Piotr; Łapiński, Mariusz; Wilczyński, Grzegorz; Fronc, Krzysztof

    2018-01-12

    Nanostructures as color-tunable luminescent markers have become major, promising tools for bioimaging and biosensing. In this paper separated molybdate/Gd 2 O 3 doped rare earth ions (erbium, Er 3+ and ytterbium, Yb 3+ ) core-shell nanoparticles (NPs), were fabricated by a one-step homogeneous precipitation process. Emission properties were studied by cathodo- and photoluminescence. Scanning electron and transmission electron microscopes were used to visualize and determine the size and shape of the NPs. Spherical NPs were obtained. Their core-shell structures were confirmed by x-ray diffraction and energy-dispersive x-ray spectroscopy measurements. We postulated that the molybdate rich core is formed due to high segregation coefficient of the Mo ion during the precipitation. The calcination process resulted in crystallization of δ/ξ (core/shell) NP doped Er and Yb ions, where δ-gadolinium molybdates and ξ-molybdates or gadolinium oxide. We confirmed two different upconversion mechanisms. In the presence of molybdenum ions, in the core of the NPs, Yb 3+ -[Formula: see text] (∣ 2 F 7/2 , 3 T 2 〉) dimers were formed. As a result of a two 980 nm photon absorption by the dimer, we observed enhanced green luminescence in the upconversion process. However, for the shell formed by the Gd 2 O 3 :Er, Yb NPs (without the Mo ions), the typical energy transfer upconversion takes place, which results in red luminescence. We demonstrated that the NPs were transported into cytosol of the HeLa and astrocytes cells by endocytosis. The core-shell NPs are sensitive sensors for the environment prevailing inside (shorter luminescence decay) and outside (longer luminescence decay) of the tested cells. The toxicity of the NPs was examined using MTT assay.

  12. Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

    International Nuclear Information System (INIS)

    Ghosh, Krishnendu; Singisetti, Uttam

    2015-01-01

    N-polar GaN channel mobility is important for high frequency device applications. Here, we report theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2DEG) in N-polar GaN quantum well channels with high-k dielectrics. Rode's iterative calculation is used to predict the scattering rate and mobility. Coupling of the GaN plasmon modes with the SO modes is taken into account and dynamic screening is employed under linear polarization response. The effect of SO phonons on 2DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with HfO 2 and ZrO 2 high-k dielectrics is low and limits the total mobility. The SO scattering for SiN dielectric on GaN was found to be negligible due to its high SO phonon energy. Using Al 2 O 3 , the SO phonon scattering does not affect mobility significantly only except the case when the channel is too thin with a low 2DEG density

  13. Studies on Optical and Electrical Properties of Hafnium Oxide Nanoparticles

    Science.gov (United States)

    Jayaraman, Venkatachalam; Sagadevan, Suresh; Sudhakar, Rajesh

    2017-07-01

    In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl4) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively simple, low-cost and non-toxic compared to other synthetic methods. The synthesized HfO2 NPs were characterized by using powder x-ray diffraction (PXRD), ultraviolet-visible (UV-Vis) spectroscopy, Raman analysis, and high-resolution transmission electron microscopy (HRTEM). The monoclinic structure of the HfO2 NPs was resolved utilizing x-ray diffraction (XRD). The optical properties were studied from the UV-Vis absorption spectrum. The optical band gap of the HfO2NPs was observed to be 5.1 eV. The Raman spectrum shows the presence of HfO2 NPs. The HRTEM image showed that the HfO2 NPs were of spherical shape with an average particle size of around 28 nm. The energy-dispersive x-ray spectroscopy (EDS) spectrum obviously demonstrated the presence of HfO2 NPs. Analysis and studies on the dielectric properties of the HfO2 NPs such as the dielectric constant, the dielectric loss, and alternating current (AC) conductivity were carried out at varying frequencies and temperatures.

  14. Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Benkel, Samantha; Zhu, Dongming

    2011-01-01

    Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

  15. Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

    Science.gov (United States)

    He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

    2017-11-01

    The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

  16. Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET

    Directory of Open Access Journals (Sweden)

    Noor Faizah Z.A.

    2016-01-01

    Full Text Available This paper presents an inclusive study and analysis of graphene-based MOSFET device at 32nm gate length. The analysis was based on top-gated structure which utilized Hafnium Dioxide (HfO2 dielectrics and metal gate. The same conventional process flows of a transistor were applied except the deposition of bilayer graphene as a channel. The analytical expression of the channel potential includes all relevant physics of bilayer graphene and by assuming that this device displays an ideal ohmic contact and functioned at a ballistic transport. Based on the designed transistor, the on-state current (ION for both GNMOS and GPMOS shows a promising performance where the value is 982.857uA/um and 99.501uA/um respectively. The devices also possess a very small leakage current (IOFF of 0.289578nA/um for GNMOS and 0.130034nA/um for GPMOS as compared to the conventional SiO2/Poly-Si and high-k metal gate transistors. However, the devices suffer an inappropriate subthreshold swing (SS and high value of drain induced barrier lowering (DIBL.

  17. Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped NiSi2 tunnel junctions

    Science.gov (United States)

    Knoll, L.; Schmidt, M.; Zhao, Q. T.; Trellenkamp, S.; Schäfer, A.; Bourdelle, K. K.; Mantl, S.

    2013-06-01

    Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped nickel disilicide (NiSi2) source and drain (S/D) contacts. We developed a novel, self-aligned process to form the p-i-n TFETs which greatly simplifies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dopant segregation. Two methods of dopant segregation are compared: dopant segregation based on the "snow-plough" effect of dopants during silicidation and implantation into the silicide (IIS) followed by thermal outdiffusion. High drive currents of up to 60 μA/μm of planar p-TFETs were achieved indicating good silicide/silicon tunneling junctions. The non-linear temperature dependence of the inverse subthreshold slope S indicates characteristic TFET behavior. Strained Si NW array n-TFETs with omega shaped HfO2/TiN gates show high drive currents of 7 μA/μm @ 1 V Vdd and steep inverse subthreshold slopes with minimum values of <50 mV/dec due to the smaller band gap of strained Si and optimized electrostatics.

  18. Uniform growth of high-quality oxide thin films on graphene using a CdSe quantum dot array seeding layer.

    Science.gov (United States)

    Kim, Yong-Tae; Lee, Seoung-Ki; Kim, Kwang-Seop; Kim, Yong Ho; Ahn, Jong-Hyun; Kwon, Young-Uk

    2014-08-13

    Graphene displays outstanding properties as an electrode and a semiconducting channel material for transistors; however, the weak interfacial bond between graphene and an inorganic oxide material-based insulator presents a major constraint on these applications. Here, we report a new approach to improving the interface between the two materials using a CdSe quantum dot (QD)-based seeding layer in an inorganic material-graphene junction. CdSe QDs were electrochemically grown on graphene without degrading the properties of the graphene layer. The graphene structure was then used as the electrode in an oxide semiconductor by depositing a zinc oxide thin film onto the graphene coated with a QD seed layer (QD/G). The zinc oxide film adhered strongly to the graphene layer and provided a low contact resistance. A high-k dielectric layer in the form of an HfO2 film, which is an essential element in the fabrication of high-performance graphene-based field effect transistors, was also uniformly formed on the QD/G sheet using atomic layer deposition. The resulting transistors provided a relatively good performance, yielding hole and electron mobilities of 2600 and 2000 cm(2)/V·s.

  19. Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

    Science.gov (United States)

    Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

    2018-04-01

    For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

  20. Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

    Directory of Open Access Journals (Sweden)

    Noor Faizah Z.A.

    2016-01-01

    Full Text Available This paper presents the modeling and optimization of 14nm gate length CMOS transistor which is down-scaled from previous 32nm gate length. High-k metal gate material was used in this research utilizing Hafnium Dioxide (HfO2 as dielectric and Tungsten Silicide (WSi2 and Titanium Silicide (TiSi2 as a metal gate for NMOS and PMOS respectively. The devices are fabricated virtually using ATHENA module and characterized its performance evaluation via ATLAS module; both in Virtual Wafer Fabrication (VWF of Silvaco TCAD Tools. The devices were then optimized through a process parameters variability using L9 Taguchi Method. There were four process parameter with two noise factor of different values were used to analyze the factor effect. The results show that the optimal value for both transistors are well within ITRS 2013 prediction where VTH and IOFF are 0.236737V and 6.995705nA/um for NMOS device and 0.248635 V and 5.26nA/um for PMOS device respectively.

  1. Enhancing analog performance and suppression of subthreshold swing using hetero-junctionless double gate TFETs

    Science.gov (United States)

    Chauhan, Sudakar Singh; Sharma, Neha

    2017-12-01

    This paper proposes hetero-junctionless double gate tunnel field effect transistor (HJLDG-TFETs) for suppression of subthreshold swing (SS) using an InAs compound semiconductor material. The proposed device with high dielectric material, gives an excellent performance when InAs uses at source side. Because of low band gap of 0.36 eV , it reduces the potential barrier height of source channel interface causing higher band to band tunneling. Whereas, Si at the drain side with higher band gap of 1.12 eV , increasing the barrier height of drain channel interface causing lower quantum tunneling. As a result, the proposed device with high-k (HfO2) at 30 nm channel section provides a tremendous characteristics with high ION /IOFF ratio of 2 ×1011 , a point SS of 43.30 mV / decade and moderate SS of 56.75 mV / decade . All the above results show that the proposed device is assured for a low power switching application. The variation in gate supply voltage also analyzed for transconductance property of the device.

  2. Investigation on the corner effect of L-shaped tunneling field-effect transistors and their fabrication method.

    Science.gov (United States)

    Kim, Sang Wan; Choi, Woo Young; Sun, Min-Chul; Park, Byung-Gook

    2013-09-01

    In this work, electrical characteristics of L-shaped tunneling field-effect transistors (TFETs) have been studied and optimized by a commercial device simulator: Synopsys Sentaurus. Unlike our previous study performed by using Silvaco Atlas, there exists a kink phenomenon in a transfer curve which degrades the subthreshold swing (SS) and on-current (lon) of TFETs. According to simulation results, the kink results from abrupt source doping. Rounding the source junction edge with gradual doping profile is helpful to alleviate it. Based on those results, a novel fabrication flow has been proposed to suppress the kink effect induced by source corners. It is predicted that the performance of L-shaped TFETs is improved in terms of SS and Ion under the optimized process condition. Furthremore, the effect of high-k gate dielectric and narrow band gap material on device performance has been examined. Using 2-nm-thick HfO2 for gate dielectric and Si0.7Ge0.3 for intrinsic tunneling region, gate controllability to the channel and tunneling probability have been enhanced. As a result, its threshold voltage (Vth), SS and Ion have been improved by 0.13 V, 16 mV/dec, and 3.62 microA/microm, respectively.

  3. Slow DNA transport through nanopores in hafnium oxide membranes.

    Science.gov (United States)

    Larkin, Joseph; Henley, Robert; Bell, David C; Cohen-Karni, Tzahi; Rosenstein, Jacob K; Wanunu, Meni

    2013-11-26

    We present a study of double- and single-stranded DNA transport through nanopores fabricated in ultrathin (2-7 nm thick) freestanding hafnium oxide (HfO2) membranes. The high chemical stability of ultrathin HfO2 enables long-lived experiments with 50 000 DNA translocations with no detectable pore expansion. Mean DNA velocities are slower than velocities through comparable silicon nitride pores, providing evidence that HfO2 nanopores have favorable physicochemical interactions with nucleic acids that can be leveraged to slow down DNA in a nanopore.

  4. Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

    Science.gov (United States)

    Nugraha, Mohamad I; Häusermann, Roger; Watanabe, Shun; Matsui, Hiroyuki; Sytnyk, Mykhailo; Heiss, Wolfgang; Takeya, Jun; Loi, Maria A

    2017-02-08

    We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport.

  5. Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

    Science.gov (United States)

    Jain, Neeraj; Raj, Balwinder

    2017-12-01

    Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects (SCEs), leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs), because of its more effective gate-controlling capabilities. In this paper, our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope (SS), ON current (I on), OFF current (I off) and I on/I off ratio. The potential benefits of SOI FinFET at drain-to-source voltage, V DS = 0.05 V and V DS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (A V), output conductance (g d), trans-conductance (g m), gate capacitance (C gg), and cut-off frequency (f T = g m/2πC gg) with spacer region variations.

  6. The dominant factors affecting the memory characteristics of (Ta2O5)x(Al2O3)1-x high-k charge-trapping devices

    Science.gov (United States)

    Gong, Changjie; Yin, Qiaonan; Ou, Xin; Lan, Xuexin; Liu, Jinqiu; Sun, Chong; Wang, Laiguo; Lu, Wei; Yin, Jiang; Xu, Bo; Xia, Yidong; Liu, Zhiguo; Li, Aidong

    2014-09-01

    The prototypical charge-trapping memory devices with the structure p-Si/Al2O3/(Ta2O5)x(Al2O3)1-x/Al2O3/Pt(x = 0.5, 0.3, and 0.1) were fabricated by using atomic layer deposition and RF magnetron sputtering techniques. A memory window of 7.39 V with a charge storage density of 1.97 × 1013 cm-2 at a gate voltage of ±11 V was obtained for the memory device with the composite charge trapping layer (Ta2O5)0.5(Al2O3)0.5. All memory devices show fast program/erase speed and excellent endurance and retention properties, although some differences in their memory performance exist, which was ascribed to the relative individual band alignments of the composite (Ta2O5)x(Al2O3)1-x with Si.

  7. Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p High-k MOS Structure

    Directory of Open Access Journals (Sweden)

    Juraj Racko

    2008-01-01

    Full Text Available The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free chargecarriers through the SiO2/Si interface traps. The calculated I–V and C–V curves reveal the processes of electron and holetunnelling through the insulator-to-semiconductor potential barrier that can be divided into four classes.

  8. High K-alpha X-ray Conversion Efficiency From Extended Source Gas Jet Targets Irradiated by Ultra Short Laser Pulses

    Energy Technology Data Exchange (ETDEWEB)

    Kugland, N L; Constantin, C; Collette, A; Dewald, E; Froula, D; Glenzer, S H; Kritcher, A; Neumayer, P; Ross, J S; Niemann, C

    2007-11-01

    The absolute laser conversion efficiency to K{sub {alpha}}-like inner shell x-rays (integrated from K{sub {alpha}} to K{sub {beta}}) is observed to be an order of magnitude higher in argon gas jets than in solid targets due to enhanced emission from higher ionization stages following ultra short pulse laser irradiation. Excluding the higher ionization stages, the conversion efficiency to near-cold K{sub {alpha}} is the same in gas jets as in solid targets. These results demonstrate that gas jet targets are bright, high conversion efficiency, high repetition rate, debris-free multi-keV x-ray sources for spectrally resolved scattering and backlighting of rapidly evolving dense matter.

  9. Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics

    OpenAIRE

    Zeumault, Andre

    2017-01-01

    Primarily used as transparent electrodes in solar-cells, more recently, physical vapor deposited(PVD) transparent conductive oxide (TCO) materials (e.g. ZnO, In2O3 and SnO2)also serve as the active layer in thin-film transistor (TFT) technology for modern liquidcrystaldisplays. Relative to a-Si:H and organic TFTs, commercial TCO TFTs have reducedoff-state leakage and higher on-state currents. Additionally, since they are transparent, theyhave the added potential to enable fully transparent TF...

  10. Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer

    Directory of Open Access Journals (Sweden)

    Xing Wang

    2016-06-01

    Full Text Available A thin Al2O3 interlayer deposited between La2O3 layer and Si substrate was used to scavenge the interfacial layer (IL by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al2O3 interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.

  11. Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al{sub 2}O{sub 3} interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xing; Liu, Hongxia, E-mail: hxliu@mail.xidian.edu.cn; Fei, Chenxi; Zhao, Lu; Chen, Shupeng; Wang, Shulong [Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071 (China)

    2016-06-15

    A thin Al{sub 2}O{sub 3} interlayer deposited between La{sub 2}O{sub 3} layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al{sub 2}O{sub 3} interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.

  12. Radiological and Nuclear Detection Material Science: Novel Rare-Earth Semiconductors for Solid-State Neutron Detectors and Thin High-k Dielectrics

    Science.gov (United States)

    2017-11-01

    6201 Fort Belvoir, VA 22060-6201 T E C H N IC A L R E P O R T DTRA-TR-15-82 Radiological and Nuclear Detection Material Science: Novel...Background: Specifically, the goals have been to investigate new materials based primarily on rare- earth semiconductors, and explore new solid state...detector configurations of these materials as neutron detectors. Seven materials (monoclinic and cubic Gd/HfO2 alloys, monoclinic and cubic Gd2O3

  13. Synthesis and characterization of hexagonal boron nitride for integration with graphene electronics

    Science.gov (United States)

    Bresnehan, Michael S.

    Hexagonal boron nitride (h-BN) has attracted increased interest as a dielectric material to graphene electronics. Traditional dielectrics, such as SiO2 or various high-k materials, can introduce scattering from charged surface states, impurities, surface optical phonons, and substrate roughness; significantly degrading the transport properties of graphene. Hexagonal boron nitride boasts several key advantages over SiO2 and high-k dielectrics. Most notably, it exhibits an atomically smooth surface that is expected to be free of dangling bonds, leading to an interface that is relatively free of surface charge traps and adsorbed impurities. Additionally, h- BN's high energy surface optical phonon modes lead to reduced phonon scattering from the dielectric. Using h-BN (grown via CVD on copper foil) as a gate dielectric to quasi-freestanding epitaxial graphene (QFEG) devices, a >2.5x increase in intrinsic current gain cut-off frequency and a >3x increase in mobility over HfO2 gated devices is obtained. In addition, this thesis presents the transfer-free deposition of boron nitride on sapphire and silicon for use as a supporting substrate to CVD-grown graphene. This is accomplished via a polymer-to-ceramic conversion process involving the deposition of polyborazylene at low temperature (≤400°C) and subsequent annealing at 1000°C to BN. Atomic force microscopy (AFM) confirms the deposition of an ultra smooth (RMS roughness CVD graphene transferred to boron nitride films deposited on Al2O3 at a polyborazylene deposition temperature of 400°C is nearly strain-free and results in an improvement in mobility of >1.5x and >2.5x compared to CVD graphene transferred to bare Al2O3 and SiO2, respectively, due to a low impurity density and reduced surface optical phonon scattering.

  14. A Fully Transparent Resistive Memory for Harsh Environments

    KAUST Repository

    Yang, Po-Kang

    2015-10-12

    A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

  15. Cytotoxicity and physicochemical properties of hafnium oxide nanoparticles.

    Science.gov (United States)

    Field, James A; Luna-Velasco, Antonia; Boitano, Scott A; Shadman, Farhang; Ratner, Buddy D; Barnes, Chris; Sierra-Alvarez, Reyes

    2011-09-01

    Nano-sized hafnium oxide (HfO(2)) particles are being considered for applications within the semiconductor industry. However, little is known about their cytotoxicity. The objective of this work was to assess several HfO(2) nanoparticles (NPs) samples for their acute cytotoxicity. Dynamic light scattering analysis of the samples indicated that the average particle size of the HfO(2) in aqueous dispersions was in the submicron range with a fraction of particles having nano-dimensions. The media used in the toxicity assays decreased or increased the average particle size of HfO(2) NPs due to dispersion or agglomeration. Static time-of-flight secondary ion mass spectrometry (ToF-SIMS) revealed numerous surface contaminants on the NPs. Only one HfO(2) sample caused moderate cytotoxicity to human cell lines. The inhibitory sample caused a 50% response in the Live/Dead assay with HaCaT skin cells at 2200 mg L(-1); and a 50% response in the mitochondrial toxicity test at 300 mg L(-1). A microbial inhibition assay based on methanogenic activity also revealed that another HFO(2) sample caused moderate inhibition. The difference in toxicity between samples could not be attributed to size. Instead the difference in toxicity was likely due to differences in the contaminants of the HfO(2). The ToF-SIMS analysis indicated unique signatures of Br and P in the sample toxic to human cell lines suggesting a distinct synthesis was used for that sample which may have been accompanied by inhibitory impurities. The results taken as a whole indicate that HfO(2) itself is relatively non-toxic. Copyright © 2011 Elsevier Ltd. All rights reserved.

  16. Surface Passivation of MoO₃ Nanorods by Atomic Layer Deposition toward High Rate Durable Li Ion Battery Anodes.

    Science.gov (United States)

    Ahmed, B; Shahid, Muhammad; Nagaraju, D H; Anjum, D H; Hedhili, Mohamed N; Alshareef, H N

    2015-06-24

    We demonstrate an effective strategy to overcome the degradation of MoO3 nanorod anodes in lithium (Li) ion batteries at high-rate cycling. This is achieved by conformal nanoscale surface passivation of the MoO3 nanorods by HfO2 using atomic layer deposition (ALD). At high current density such as 1500 mA/g, the specific capacity of HfO2-coated MoO3 electrodes is 68% higher than that of bare MoO3 electrodes after 50 charge/discharge cycles. After 50 charge/discharge cycles, HfO2-coated MoO3 electrodes exhibited specific capacity of 657 mAh/g; on the other hand, bare MoO3 showed only 460 mAh/g. Furthermore, we observed that HfO2-coated MoO3 electrodes tend to stabilize faster than bare MoO3 electrodes because nanoscale HfO2 layer prevents structural degradation of MoO3 nanorods. Additionally, the growth temperature of MoO3 nanorods and the effect of HfO2 layer thickness was studied and found to be important parameters for optimum battery performance. The growth temperature defines the microstructural features and HfO2 layer thickness defines the diffusion coefficient of Li-ions through the passivation layer to the active material. Furthermore, ex situ high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction were carried out to explain the capacity retention mechanism after HfO2 coating.

  17. Surface Passivation of MoO3 Nanorods by Atomic Layer Deposition Towards High Rate Durable Li Ion Battery Anodes

    KAUST Repository

    Ahmed, Bilal

    2015-06-03

    We demonstrate an effective strategy to overcome the degradation of MoO3 nanorod anodes in Lithium (Li) ion batteries at high rate cycling. This is achieved by conformal nanoscale surface passivation of the MoO3 nanorods by HfO2 using atomic layer deposition (ALD). At high current density such as 1500 mA/g, the specific capacity of HfO2 coated MoO3 electrodes is 68% higher than bare MoO3 electrodes after 50 charge/discharge cycles. After 50 charge/discharge cycles, HfO2 coated MoO3 electrodes exhibited specific capacity of 657 mAh/g, on the other hand, bare MoO3 showed only 460 mAh/g. Furthermore, we observed that HfO2 coated MoO3 electrodes tend to stabilize faster than bare MoO3 electrodes because nanoscale HfO2 layer prevents structural degradation of MoO3 nanorods. Additionally, the growth temperature of MoO3 nanorods and the effect of HfO2 layer thickness was studied and found to be important parameters for optimum battery performance. The growth temperature defines the microstructural features and HfO2 layer thickness defines the diffusion coefficient of Li–ions through the passivation layer to the active material. Furthermore, ex–situ HRTEM, X–ray photoelectron spectroscopy (XPS), Raman spectroscopy and X–ray diffraction was carried out to explain the capacity retention mechanism after HfO2 coating.

  18. Temperature effect on electrospinning of nanobelts: the case of hafnium oxide

    International Nuclear Information System (INIS)

    Su Yurong; Lu Bingan; Xie Yizhu; Ma Ziwei; Liu Lixin; Zhao Haiting; Duan Huigao; Zhang Hongliang; Li Jian; Xie Erqing; Zhang Jia; Xiong Yuqing

    2011-01-01

    Electrospinning is a convenient and versatile method for fabricating different kinds of one-dimensional nanostructures such as nanofibres, nanotubes and nanobelts. Environmental parameters have a great influence on the electrospinning nanostructure. Here we report a new method to fabricate hafnium oxide (HfO 2 ) nanobelts. HfO 2 nanobelts were prepared by electrospinning a sol-gel solution with the implementation of heating and subsequent calcination treatment. We investigate the temperature dependence of the products by scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and energy-dispersive x-ray (EDX) spectroscopy. The heating temperature of spinning ambient is found to be crucial to the formation of HfO 2 nanobelts. By tuning the temperature, the morphological transformation of HfO 2 from nanowires to nanobelts was achieved. It was found that the rapid evaporation of solvent played an important role in the formation process of HfO 2 nanobelts. It is shown that nanobelts can only be obtained with the temperature higher than 50 0 C and they are in the high quality monoclinic phase. A possible growth mechanism of the nanobelts based on phase separation is proposed. The enhanced photoluminescence (PL) of HfO 2 :Eu 3+ nanobelts is also illustrated.

  19. Oral Alimentation in Neonatal and Adult Populations Requiring High-Flow Oxygen via Nasal Cannula.

    Science.gov (United States)

    Leder, Steven B; Siner, Jonathan M; Bizzarro, Matthew J; McGinley, Brian M; Lefton-Greif, Maureen A

    2016-04-01

    Use of high-flow oxygen via nasal cannula (HFO2-NC) is increasingly common in intensive care unit (ICU) settings. Despite the critical interface between respiration and swallowing, and the high acuity of patients in ICUs, the impact of HFO2-NC on feeding and swallowing is unknown. The present prospective, single-center, cohort study investigated the impact of HFO2-NC use on oral alimentation in neonatal and adult ICU patients. Oral alimentation status was evaluated in 100 consecutive ICU inpatients (50 neonatal and 50 adult) requiring HFO2-NC. Participant characteristics, respiratory support, successful initiation of oral feeding in neonates, and successful resumption of oral feeding in adults were recorded. Seventeen of 50 (34 %) neonates requiring HFO2-NC were deemed developmentally and medically appropriate by the neonatologist and nursing to begin oral alimentation. All 17 (100 %) were successful with initiation of oral feedings. Thirty-three of 50 (66 %) continued nil per os due to prematurity or medical conditions precluding oral alimentation at time of data collection. Thirty-nine of 50 (78 %) adults requiring HFO2-NC were deemed medically appropriate by the intensivist and nursing to resume oral alimentation (n = 34) or with a functional swallow without aspiration on FEES (n = 5). All 39 (100 %) resumed oral alimentation successfully. Eleven of 50 (22 %) continued nil per os due to severe respiratory issues precluding both swallow testing and oral alimentation at time of data collection. All developmentally and medically appropriate neonatal and adult patients requiring HFO2-NC were successful with either the introduction or resumption of oral alimentation. Patients requiring HFO2-NC who are identified as having feeding or swallowing issues should be referred for swallowing evaluations using the same criteria as patients who do not require HFO2-NC, as it is not the use of HFO2-NC but rather patient-specific determinants of feeding and swallowing

  20. Progress in commercial TXRF spectrometer for semiconductors

    International Nuclear Information System (INIS)

    Nishihagi, K.

    2000-01-01

    In the scale down of ULSI devices, it is required to reduce contamination of metal or particle due to get higher yield. For the metallic contamination, we are trying to develop to get higher sensitivity in direct-TXRF method, however, VPD-TXRF is the most important method to get 10 7 to 10 8 atoms/cm 2 sensitivity. For the particle contamination, we have developed software to link TXRF spectrometer with particle counter because not only position or size but also composition analysis have got required. In semiconductor industries, there are two important changing for improvement on production management system as COO (Cost Of Ownership) or standardization. One is the size of wafer has changed from 200 mm to 300 mm. Against this, we have redesigned TXRF spectrometer for 300 mm wafer without down of sensitivity. The other is the production system has become completely automated. On this point, we have also redesigned to link TXRF spectrometer with SMIF (Standard Mechanical Interface) or FOUP (Front Opening Unified Pod) as mini-environment, and with SECS 2 (SEMI Equipment Communications Standard 2) or GEM 300 (Generic Equipment Model) as automatically standardization. We shall also introduce some applications about new materials using TXRF such as Ta 2 O 5 , ZrO 2 and HfO 2 for high-k materials, and also Ru, SRO and IrO 2 for electrode materials. Furthermore, we shall introduce our new equipment for thickness and composition analysis such as PZT, BST and MOCVD TiN thin films. (author)

  1. Pitting corrosion protection of stainless steel by sputter deposited hafnia, alumina, and hafnia-alumina nanolaminate films

    International Nuclear Information System (INIS)

    Almomani, M. A.; Aita, C. R.

    2009-01-01

    316L stainless steel coated with sputter deposited HfO 2 , Al 2 O 3 , and HfO 2 -Al 2 O 3 nanolaminate films were subjected to direct current cyclic potentiodynamic polarization (DCP) in Hanks' balanced salt solution electrolyte. Postexposure morphology was characterized by scanning electron microscopy (SEM) with in situ energy dispersive spectroscopy (EDS). SEM/EDS data show that bare steel and steel coated with single-layer HfO 2 develop pits with perforated covers. These pits become autocatalytic, consistent with an observed positive DCP hysteresis. On the other hand, SEM/EDS data show that steel coated with Al 2 O 3 and HfO 2 -Al 2 O 3 nanolaminate films does not develop autocatalytic pits, consistent with an observed negative DCP hysteresis. However, Al 2 O 3 splinters upon polarization whereas the HfO 2 -Al 2 O 3 nanolaminate remains intact. The areas of worst damage in the nanolaminate correspond to pit cover rupture before autocatalysis, allowing pit and bulk electrolyte to mix and the newly exposed steel surface to repassivate. The films' diverse behavior is discussed in terms of a model for perforated pit growth that requires occlusion until an autocatalytic geometry is established. The authors conclude that the key property a film must have to arrest autocatalytic geometry development is the ability to rupture locally at an early stage of pit growth.

  2. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  3. Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

    International Nuclear Information System (INIS)

    Zhu Xiaoxiao; Li Qiliang; Ioannou, Dimitris E; Gu, Diefeng; Baumgart, Helmut; Bonevich, John E; Suehle, John S; Richter, Curt A

    2011-01-01

    We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO 2 charge trapping layers of varying thicknesses. The memory cells, which are fabricated by self-aligning in situ grown Si nanowires, exhibit high performance, i.e. fast program/erase operations, long retention time and good endurance. The effect of the trapping layer thickness of the nanowire memory cells has been experimentally measured and studied by simulation. As the thickness of HfO 2 increases from 5 to 30 nm, the charge trap density increases as expected, while the program/erase speed and retention remain the same. These data indicate that the electric field across the tunneling oxide is not affected by HfO 2 thickness, which is in good agreement with simulation results. Our work also shows that the Omega gate structure improves the program speed and retention time for memory applications.

  4. Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells.

    Science.gov (United States)

    Zhu, Xiaoxiao; Li, Qiliang; Ioannou, Dimitris E; Gu, Diefeng; Bonevich, John E; Baumgart, Helmut; Suehle, John S; Richter, Curt A

    2011-06-24

    We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO(2) charge trapping layers of varying thicknesses. The memory cells, which are fabricated by self-aligning in situ grown Si nanowires, exhibit high performance, i.e. fast program/erase operations, long retention time and good endurance. The effect of the trapping layer thickness of the nanowire memory cells has been experimentally measured and studied by simulation. As the thickness of HfO(2) increases from 5 to 30 nm, the charge trap density increases as expected, while the program/erase speed and retention remain the same. These data indicate that the electric field across the tunneling oxide is not affected by HfO(2) thickness, which is in good agreement with simulation results. Our work also shows that the Omega gate structure improves the program speed and retention time for memory applications.

  5. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications.

    Science.gov (United States)

    Mendoza, J Guzmán; Frutis, M A Aguilar; Flores, G Alarcón; Hipólito, M García; Maciel Cerda, A; Azorín Nieto, J; Montalvo, T Rivera; Falcony, C

    2010-01-01

    Hafnium oxide (HfO(2)) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 degrees C. For substrate temperatures lower than 400 degrees C the deposited films were amorphous, while for substrate temperatures higher than 450 degrees C, the monoclinic phase of HfO(2) appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO(2), with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown. Copyright 2009 Elsevier Ltd. All rights reserved.

  6. Zero and low coefficient of thermal expansion polycrystalline oxides

    International Nuclear Information System (INIS)

    Skaggs, S.R.

    1977-09-01

    Polycrystalline oxide systems with zero to low coefficient of thermal expansion (CTE) investigated by the author include hafnia-titania and hafnia. The CTE for 30 to 40 mol% TiO 2 in HfO 2 is less than or equal to 1 x 10 -6 / 0 C, while for other compositions in the range 25 to 60 mol% it is approximately 4 x 10 -6 / 0 C. An investigation of the CTE of 99.999% HfO 2 yielded a value of 4.6 x 10 -6 / 0 C from room temperature to 1000 0 C. Correlation with data on HfO 2 by other investigators shows a definite relationship between the CTE and the amount of ZrO 2 present. Data are listed for comparison of the CTE of several other polycrystalline oxides investigated by Holcombe at Oak Ridge

  7. Zero and low coefficient of thermal expansion polycrystalline oxides

    International Nuclear Information System (INIS)

    Skaggs, S.R.

    1977-01-01

    Polycrystalline oxide systems with zero to low coefficient of thermal expansion (CTE) investigated by the author include hafnia-titania and hafnia. The CTE for 30 to 40 mol percent TiO 2 in HfO 2 is less than or equal to 1 x 10 -6 / 0 C, while for other compositions in the range 25 to 60 mol percent approximately 4 x 10 -6 / 0 C. An investigation of the CTE of 99.999 percent HfO 2 yielded a value of 4.6 x 10 -6 / 0 C from room temperature to 1000 0 C. Correlation with data on HfO 2 by other investigators shows a definite relationship between the CTE and the amount of ZrO 2 present. Data are listed for comparison of the CTE of several other polycrystalline oxides investigated by Holcombe at Oak Ridge

  8. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications

    International Nuclear Information System (INIS)

    Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Maciel Cerda, A.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

    2010-01-01

    Hafnium oxide (HfO 2 ) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 deg. C. For substrate temperatures lower than 400 deg. C the deposited films were amorphous, while for substrate temperatures higher than 450 deg. C, the monoclinic phase of HfO 2 appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO 2 , with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown.

  9. Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

    Science.gov (United States)

    Zhu, Xiaoxiao; Li, Qiliang; Ioannou, Dimitris E.; Gu, Diefeng; Bonevich, John E.; Baumgart, Helmut; Suehle, John S.; Richter, Curt A.

    2011-06-01

    We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO2 charge trapping layers of varying thicknesses. The memory cells, which are fabricated by self-aligning in situ grown Si nanowires, exhibit high performance, i.e. fast program/erase operations, long retention time and good endurance. The effect of the trapping layer thickness of the nanowire memory cells has been experimentally measured and studied by simulation. As the thickness of HfO2 increases from 5 to 30 nm, the charge trap density increases as expected, while the program/erase speed and retention remain the same. These data indicate that the electric field across the tunneling oxide is not affected by HfO2 thickness, which is in good agreement with simulation results. Our work also shows that the Omega gate structure improves the program speed and retention time for memory applications.

  10. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  11. High-performance printed carbon nanotube thin-film transistors array fabricated by a nonlithography technique using hafnium oxide passivation layer and mask.

    Science.gov (United States)

    Pillai, Suresh Kumar Raman; Chan-Park, Mary B

    2012-12-01

    The large-scale application of semiconducting single-walled carbon nanotubes (s-SWCNTs) for printed electronics requires scalable, repeateable, as well as noncontaminating assembly techniques. Previously explored nanotube deposition methods include serial methods such as inkjet printing and parallel methods such as spin-coating with photolithography. The serial methods are usually slow, whereas the photolithography-related parallel methods result in contamination of the nanotubes. In this paper, we report a reliable clean parallel method for fabrication of arrays of carbon nanotube-based field effect transistors (CNTFETs) involving shadow mask patterning of a passivating layer of Hafnium oxide (HfO(2)) over the nanotube (CNT) active channel regions and plasma etching of the unprotected nanotubes. Pure (99%) semiconducting SWCNTs are first sprayed over the entire surface of a wafer substrate followed by a two-step shadow masking procedure to first deposit metal electrodes and then a HfO(2) isolation/passivation layer over the device channel region. The exposed SWCNT network outside the HfO(2) protected area is removed with oxygen plasma etching. The HfO(2) thus serves as both the device isolation mask during the plasma etching and as a protective passivating layer in subsequent use. The fabricated devices on SiO(2)/Si substrate exhibit good device performance metrics, with on/off ratio ranging from 1 × 10(1) to 3 × 10(5) and mobilities of 4 to 23 cm(2)/(V s). The HfO(2)/Si devices show excellent performance with on/off ratios of 1 × 10(2) to 2 × 10(4) and mobilities of 8 to 56 cm(2)/(V s). The optimum devices (on HfO(2)/Si) have an on/off ratio of 1 × 10(4) and mobility as high as 46 cm(2)/(V s). This HfO(2)-based patterning method enables large scale fabrication of CNTFETs with no resist residue or other contamination on the device channel. Further, shadow masking circumvents the need for expensive and area-limited lithography patterning process. The device channel is also protected from external environment by the HfO(2) film and the passivated device shows similar (or slightly improved) performance after 300 days of exposure to ambient conditions.

  12. Laser Induced Damage in Optical Materials: 1979.

    Science.gov (United States)

    1980-07-01

    MgO, HfO2 , ZrO2 , Nd203, CeO2 , TiO 2 and SiO 2 films about 5000 R thick, deposited on Suprasil I substrates. They also compared the damage threshold...ion filtered and reactive gas treated for purification prior to crystal growth. The samples were surface ground, polished with a slurry of Linde A in...A1203, BeO, MgO, HfO 2 , ZrO2, Nd203, CeO2 , TiO2 and Si02- thickness about O.5/um - were electron gun evaporated Zn Suprasil I substrates. Damage

  13. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    Science.gov (United States)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal-oxides into device structures. The novel process involving the TiOx buffer layer for TiO2 and the POLD process of HfO2 have been developed as new processing methods for high dielectric applications.

  14. High reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime

    KAUST Repository

    Alias, Mohd Sharizal

    2018-02-15

    A distributed Bragg reflector (DBR) composed of Y2O3-doped HfO2 (YDH)/SiO2 layers with high reflectivity spectrum centered at a wavelength of ~240 nm is deposited using radio-frequency magnetron sputtering. Before the DBR deposition, optical properties for a single layer of YDH, SiO2, and HfO2 thin films were studied using spectroscopic ellipsometry and spectrophotometry. To investigate the performance of YDH as a material for the high refractive index layer in the DBR, a comparison of its optical properties was made with HfO2 thin films. Due to larger optical bandgap, the YDH thin films demonstrated higher transparency, lower extinction coefficient, and lower absorption coefficient in the UV-C regime (especially for wavelengths below 250 nm) compared to the HfO2 thin films. The deposited YDH/SiO2 DBR consisting of 15 periods achieved a reflectivity higher than 99.9% at the wavelength of ~240 nm with a stopband of ~50 nm. The high reflectivity and broad stopband of YDH/SiO2 DBRs will enable further advancement of various photonic devices such as vertical-cavity surface-emitting lasers, resonant-cavity light-emitting diodes, and resonant-cavity photodetectors operating in the UV-C wavelength regime.

  15. Comparing electron recombination via interfacial modifications in dye-sensitized solar cells.

    Science.gov (United States)

    Li, Luping; Chen, Shikai; Xu, Cheng; Zhao, Yang; Rudawski, Nicholas G; Ziegler, Kirk J

    2014-12-10

    Establishing a blocking layer between the interfaces of the photoanode is an effective approach to improve the performance of dye-sensitized solar cells (DSSCs). In this work, HfO2 blocking layers are deposited via atomic layer deposition (ALD) onto tin-doped indium oxide (ITO) and TiO2. In both cases, addition of the blocking layer increases cell efficiencies to greater than 7%. The improved performance for a HfO2 layer inserted between the ITO/TiO2 interface is associated with an energy barrier that reduces electron recombination. HfO2 blocking layers between the TiO2/dye interface show more complex behavior and are more sensitive to the number of ALD cycles. For thin blocking layers on TiO2, the improved device performance is attributed to the passivation of surface states in TiO2. A distinct transition in dark current and electron lifetime are observed after 4 ALD cycles. These changes to performance indicate thick HfO2 layers on TiO2 formed an energy barrier that significantly hinders cell performance.

  16. Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

    Science.gov (United States)

    Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

    2017-04-01

    Hafnium oxide (HfO2) thin films were grown on cleaned P-type Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

  17. Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

    Science.gov (United States)

    Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

    2016-03-01

    Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

  18. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

    2017-07-01

    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  19. Femtosecond-laser-induced damage initiation mechanism on metal multilayer dielectric gratings for pulse compression

    Science.gov (United States)

    Huang, Haopeng; Kong, Fanyu; Xia, Zhilin; Jin, Yunxia; Li, Linxin; Wang, Leilei; Chen, Junming; Cui, Yun; Shao, Jianda

    2018-01-01

    The femtosecond-laser-induced damage behaviors of metal multilayer dielectric gratings (MMDG) for pulse compression are explored. The grating ridge of this type of MMDG consists of a layer of HfO2 sandwiched between two SiO2 layers. The initial damage position is on the HfO2 layer of the ridge which opposite to the laser beam direction. A theoretical model is constructed to explain the femtosecond-laser-induced damage initiation mechanism on the MMDG, and the model can simulate the evolution of the electron density in the conduction band and the change of the dielectric constants of HfO2 and SiO2 in the sandwiched grating structure. The dramatic increase in the imaginary part of the dielectric constant of the middle HfO2 layer indicates that it strongly absorbs laser energy, resulting in damage to the MMDG. The experimental results and theoretical calculation agree very well with each other.

  20. Initial hafnium oxide growth on silicon(100) and gallium arsenide(100) substrates using TEMAH+water and TDMAH+water ALD processes

    Science.gov (United States)

    Hackley, Justin Cain

    Atomic layer deposition (ALD) is a cyclic growth process that is distinguished by a self-limiting, two-step surface reaction that results in precise growth control and high quality, conformal thin films. Due to the continuous downscaling of MOSFET devices, a large interest has recently developed in the ALD of high-kappa dielectric materials as gate oxide layers on Si and III-V substrates. The ALD of HfO2 is an established process; however, there is still controversy over the initial growth mechanisms on differently prepared Si surfaces. This motivated a comparison of the nucleation stage of HfO 2 films grown on OH-(Si-OH) and H-terminated (Si-H) Si(100) surfaces. Two different ALD chemistries are investigated, including tetrakis[ethylmethylamino]hafnium (Hf[N(CH3)(C2H5)]4), abbreviated as TEMAH, and tetrakis[dimethylamino]hafnium (Hf[N(CH3)2] 4, abbreviated as TDMAH. H2O is used as the oxidizing precursor. Deposition temperatures of 250-275°C result in a linear growth per cycle of 1 A/cycle. Techniques including Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and transmission electron microscopy are used to examine the film interface and initial film growth. HfO2 films are also subjected to post-deposition anneals, and the film morphology is examined with X-ray diffraction, Fourier transform infrared spectroscopy and atomic force microscopy. GaAs MOSFET devices have long proven elusive due to the lack of a stable native oxide. Recent research into high-kappa dielectric materials for use in Si-based devices has presented many new options for insulating layers on GaAs. HfO2 growth on GaAs(100) from a TDMAH+H2O ALD process is studied here. Three different GaAs surface treatments are examined, including buffered oxide etch (BOE), NH4OH, and a simple acetone/methanol wash (to retain the native oxide surface). Initial HfO2 growth on these surfaces is characterized with RBS and SE. The interfacial composition is examined with XPS both before and after HfO2 deposition. Also, an interesting native oxide 'consumption' mechanism is investigated, which involves the dissolution of the GaAs native oxide during the ALD process. This project presents the first detailed study of HfO2 growth on GaAs with the TDMAH/H2O ALD chemistry, providing XPS, RBS and SE characterization of early film growth.

  1. Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

    Science.gov (United States)

    Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

    2016-03-01

    We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

  2. Interface and material engineering for zigzag slab lasers.

    Science.gov (United States)

    Liu, Fei; Dong, Siyu; Zhang, Jinlong; Jiao, Hongfei; Ma, Bin; Wang, Zhanshan; Cheng, Xinbin

    2017-12-01

    Laser damage of zigzag slab lasers occurs at interface between laser crystal and SiO 2 film. Although an additional HfO 2 layer could be used to manipulate electric-field on the crystal-film interface, their high absorption and polycrystalline structure were unacceptable. SiO 2 was then doped in HfO 2 to suppress its crystallization and to achieve low absorption by annealing. Hf x Si 1-x O 2 nanocomposite layers were then inserted between laser crystal and SiO 2 film to minimize electric-field at crystal-film interface. Laser damage resistance of this new architecture is two times higher than that of traditional zigzag slab lasers.

  3. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

    Directory of Open Access Journals (Sweden)

    Fu-Chien Chiu

    2013-01-01

    Full Text Available The interfacial properties between silicon and hafnium oxide (HfO2 are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

  4. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

  5. Amplitude modulation in infrared metamaterial absorbers based on electro-optically tunable conducting oxides

    Science.gov (United States)

    Zografopoulos, D. C.; Sinatkas, G.; Lotfi, E.; Shahada, L. A.; Swillam, M. A.; Kriezis, E. E.; Beccherelli, R.

    2018-02-01

    A class of electro-optically tunable metamaterial absorbers is designed and theoretically investigated in the infrared regime towards realizing free-space amplitude modulators. The spacer between a subwavelength metallic stripe grating and a back metal reflector is occupied by a bilayer of indium tin oxide (ITO) and hafnium oxide (HfO_2). The application of a bias voltage across the bilayer induces free-carrier accumulation at the HfO_2/ITO interface that locally modulates the ITO permittivity and drastically modifies the optical response of the absorber owing to the induced epsilon-near-zero (ENZ) effect. The carrier distribution and dynamics are solved via the drift-diffusion model, which is coupled with optical wave propagation studies in a common finite-element method platform. Optimized structures are derived that enable the amplitude modulation of the reflected wave with moderate insertion losses, theoretically infinite extinction ratio, sub-picosecond switching times and low operating voltages.

  6. Transmission electron microscopy assessment of conductive-filament formation in Ni-HfO2-Si resistive-switching operational devices

    Science.gov (United States)

    Martín, Gemma; González, Mireia B.; Campabadal, Francesca; Peiró, Francesca; Cornet, Albert; Estradé, Sònia

    2018-01-01

    Resistive random-access memory (ReRAM) devices are currently the object of extensive research to replace flash non-volatile memory. However, elucidation of the conductive-filament formation mechanisms in ReRAM devices at nanoscale is mandatory. In this study, the different states created under real operation conditions of HfO2-based ReRAM devices are characterized through transmission electron microscopy and electron energy-loss spectroscopy. The physical mechanism behind the conductive-filament formation in Ni/HfO2/Si ReRAM devices based on the diffusion of Ni from the electrode to the Si substrate and of Si from the substrate to the electrode through the HfO2 layer is demonstrated.

  7. Effect of post-deposition annealing on the structural and electrical properties of RF sputtered hafnium oxide thin films

    Science.gov (United States)

    Das, K. C.; Ghosh, S. P.; Tripathy, N.; Bose, G.; Kar, J. P.

    2016-02-01

    Hafnium oxide films were deposited on silicon substrates by RF sputtering at room temperature. Post-deposition rapid thermal annealing of the sputtered HfO2 films was carried out in the temperature range of 400°C to 800°C in oxygen ambient. The structural properties ware studied by X-ray diffraction (XRD), where the enhancement in the crystallinity of HfO2 (1¯11) orientation was observed. The Capacitance —Voltage (C-V) and Current density —Voltage (J-V) characteristics of the annealed dielectric film were investigated employing Al/HfO2/Si Metal Oxide Semiconductor (MOS) capacitor structure. The flatband voltage (V fb ) and oxide charge density (Q ox ) were extracted from the high frequency (1 MHz) C-V curve. Leakage current was found to be minimum for the annealing temperature of 600°C.

  8. Comparison of envelope method and full spectra fitting method for determination of optical constants of thin films

    Science.gov (United States)

    Liu, Huasong; Hou, Dehai; Wang, Zhanshan; Ji, Yiqin; Fan, Yongkai; Fan, Rongwei

    2011-02-01

    Transmittance envelope of the thin film-substrate system and full spectra fitting method are two important methods to determine the optical constants of the optical thin films. Ion beam sputtering deposition technique was used to manufacture HfO2 single layer thin film onto fused silica substrate. The two methods were used to calculate optical constants of the HfO2 thin film in the extreme wavelength, and the Cauchy dispersion model was used to fit the optical constants in wavelength region from 300 nm to 1000 nm. Using the thin-film optical constants obtained above we calculated the spectral transmittance and judged the inversion accuracy of the two methods. The results show that the accuracy of the full spectra fitting method is higher than the transmittance spectra envelope. The similarities and differences between the two methods are also discussed in this paper.

  9. The response of dispersion-strengthened copper alloys to high fluence neutron irradiation at 415 degrees C

    International Nuclear Information System (INIS)

    Edwards, D.J.; Newkirk, J.W.; Garner, F.A.; Hamilton, M.L.; Nadkarni, A.; Samal, P.

    1993-01-01

    Various oxide-dispersion-strengthened copper alloys have been irradiated to 150 dpa at 415 degrees C in the Fast Flux Test Facility (FFTF). The Al 2 O 3 -strengthened GlidCop TM alloys, followed closely by a HfO 2 -strengthened alloy, displayed the best swelling resistance, electrical conductivity, and tensile properties. The conductivity of the HfO 2 -strengthened alloy reached a plateau at the higher levels of irradiation, instead of exhibiting the steady decrease in conductivity observed in the other alloys. A high initial oxygen content results in significantly higher swelling for a series of castable oxide-dispersion-strengthened alloys, while a Cr 2 O 3 -strengthened alloy showed poor resistance to radiation

  10. Oxidation behavior of TiC, ZrC, and HfC dispersed in oxide matrices

    International Nuclear Information System (INIS)

    Arun, R.; Subramanian, M.; Mehrotra, G.M.

    1990-01-01

    The oxidation behavior of hot pressed TiC-Al 2 O 3 , TiC-ZrO 2 , ZrC-ZrO 2 , and HfC-HfO 2 composites has been investigated at 1273 K. The oxidation of TiC, ZrC, and HfC in hot-pressed composites containing ZrO 2 and HfO 2 has been found to be extremely rapid. The kinetics of oxidation of TiC and a 90 wt% TiC-Al 2 O 3 composite appear to be faster compared to that of pure TiC. X-ray diffraction results for hot-pressed ZrC-HfO 2 and HfC-HfO 2 composites indicate partial stabilization of tetragonal ZrO 2 and HfO 2 phases in these composites

  11. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    International Nuclear Information System (INIS)

    Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelae, M.

    2005-01-01

    Deep level transient spectroscopy, capacitance-voltage and conductance transient measurement techniques have been applied in order to evaluate the electrical quality of thin high-permittivity oxide layers on silicon. The oxides studied included HfO 2 film grown from two different oxygen-free metal precursors and Ta 2 O 5 and Nb 2 O 5 nanolaminates. The interface trap densities correlated to the oxide growth chemistry and semiconductor substrate treatment. No gap state densities induced by structural disorder were measured in the films grown on chemical SiO 2 . Trap densities were also clearly lower in HfO 2 films compared to Ta 2 O 5 -Nb 2 O 5

  12. Determination of thermal conductivity of thin layers used as transparent contacts and antireflection coatings with a photothermal method.

    Science.gov (United States)

    Kaźmierczak-Bałata, Anna; Bodzenta, Jerzy; Korte-Kobylińska, Dorota; Mazur, Jacek; Gołaszewska, Krystyna; Kamińska, Eliana; Piotrowska, Anna

    2009-03-01

    A photothermal experiment with mirage detection was used to determine the thermal conductivity of various thin films deposited on semiconductor substrates. The first type consisted of conducting oxide films: ZnO and CdO deposited on GaSb:Te, while the other contained high dielectric constant HfO(2) layers on Si. All films were fabricated using a magnetron sputtering technique. Experimental results showed that the value of the thermal conductivity of ZnO and CdO films is lower than the value obtained for HfO(2). Thermal conductivities of investigated thin films are about 2 orders of magnitude lower than those corresponding to bulk materials.

  13. Role of WC additive on reaction, solid-solution and densification in HfB2–SiC ceramics

    DEFF Research Database (Denmark)

    Hu, Dong-Li; Zheng, Qiang; Gu, Hui

    2014-01-01

    A comparative study of phase components and compositions was performed for the pressureless sintered HfB2–SiC–WC composites by various analytical methods. The relative decrease of HfB2 phase leads to a new reaction of HfO2 removal by WC to create B2O3. By using SiC instead of Si3N4 as milling med...

  14. Technical Note: A simulation study on the feasibility of radiotherapy dose enhancement with calcium tungstate and hafnium oxide nano- and microparticles.

    Science.gov (United States)

    Sherck, Nicholas J; Won, You-Yeon

    2017-12-01

    To assess the radiotherapy dose enhancement (RDE) potential of calcium tungstate (CaWO 4 ) and hafnium oxide (HfO 2 ) nano- and microparticles (NPs). A Monte Carlo simulation study was conducted to gauge their respective RDE potentials relative to that of the broadly studied gold (Au) NP. The study was warranted due to the promising clinical and preclinical studies involving both CaWO 4 and HfO 2 NPs as RDE agents in the treatment of various types of cancers. The study provides a baseline RDE to which future experimental RDE trends can be compared to. All three materials were investigated in silico with the software Penetration and Energy Loss of Positrons and Electrons (PENELOPE 2014) developed by Francesc Salvat and distributed in the United States by the Radiation Safety Information Computational Center (RSICC) at Oak Ridge National Laboratory. The work utilizes the extensively studied Au NP as the "gold standard" for a baseline. The key metric used in the evaluation of the materials was the local dose enhancement factor (DEF loc ). An additional metric used, termed the relative enhancement ratio (RER), evaluates material performance at the same mass concentrations. The results of the study indicate that Au has the strongest RDE potential using the DEF loc metric. HfO 2 and CaWO 4 both underperformed relative to Au with lower DEF loc of 2-3 × and 4-100 ×, respectively. The computational investigation predicts the RDE performance ranking to be: Au > HfO 2 > CaWO 4 . © 2017 American Association of Physicists in Medicine.

  15. Materials and Coatings for Extreme Performances: Investigations, Applications, Ecologically Safe Technologies for Their Production and Utilization

    Science.gov (United States)

    2004-11-16

    V., Frolova E.G. В346 PHASE EQUILIBRIA IN THE TERNARY SYSTEM ZrO2-HfO2- CeO2 AT 1500 °C Andrievskaya Elena R., Gerasimyk Galina I., Lopato Lidiya M...technology of reclamation of grinding slurries of bearing production is one of such urgent directions. Scientific schools of academic institutes and...recycling of grinding slurries are offered. Powders obtained with application of these technical solutions are used for friction and antifriction

  16. Synthesis of Hafnium-Based Ceramic Materials for Ultra-High Temperature Aerospace Applications

    Science.gov (United States)

    Johnson, Sylvia; Feldman, Jay

    2004-01-01

    This project involved the synthesis of hafnium (Hf)-based ceramic powders and Hf-based precursor solutions that were suitable for preparation of Hf-based ceramics. The Hf-based ceramic materials of interest in this project were hafnium carbide (with nominal composition HE) and hafnium dioxide (HfO2). The materials were prepared at Georgia Institute of Technology and then supplied to research collaborators Dr. Sylvia Johnson and Dr. Jay Feldman) at NASA Ames Research Center.

  17. Unravelling the surface chemistry of metal oxide nanocrystals, the role of acids and bases.

    Science.gov (United States)

    De Roo, Jonathan; Van den Broeck, Freya; De Keukeleere, Katrien; Martins, José C; Van Driessche, Isabel; Hens, Zeger

    2014-07-09

    We synthesized HfO2 nanocrystals from HfCl4 using a surfactant-free solvothermal process in benzyl alcohol and found that the resulting nanocrystals could be transferred to nonpolar media using a mixture of carboxylic acids and amines. Using solution (1)H NMR, FTIR, and elemental analysis, we studied the details of the transfer reaction and the surface chemistry of the resulting sterically stabilized nanocrystals. As-synthesized nanocrystals are charge-stabilized by protons, with chloride acting as the counterion. Treatment with only carboxylic acids does not lead to any binding of ligands to the HfO2 surface. On the other hand, we find that the addition of amines provides the basic environment in which carboxylic acids can dissociate and replace chloride. This results in stable, aggregate-free dispersions of HfO2 nanocrystals, sterically stabilized by carboxylate ligands. Moreover, titrations with deuterated carboxylic acid show that the charge on the carboxylate ligands is balanced by coadsorbed protons. Hence, opposite from the X-type/nonstoichiometric nanocrystals picture prevailing in literature, one should look at HfO2/carboxylate nanocrystals as systems where carboxylic acids are dissociatively adsorbed to bind to the nanocrystals. Similar results were obtained with ZrO2 NCs. Since proton accommodation on the surface is most likely due to the high Brønsted basicity of oxygen, our model could be a more general picture for the surface chemistry of metal oxide nanocrystals with important consequences on the chemistry of ligand exchange reactions.

  18. Rare Earth-Activated Silica-Based Nanocomposites

    Directory of Open Access Journals (Sweden)

    C. Armellini

    2007-01-01

    Full Text Available Two different kinds of rare earth-activated glass-based nanocomposite photonic materials, which allow to tailor the spectroscopic properties of rare-earth ions: (i Er3+-activated SiO2-HfO2 waveguide glass ceramic, and (ii core-shell-like structures of Er3+-activated silica spheres obtained by a seed growth method, are presented.

  19. Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications

    Science.gov (United States)

    Gowda, Srivardhan Shivappa

    studied as a function of tunnel oxide thickness, dielectric permittivity and energy barrier, and modified Butler-Volmer expressions were postulated to describe the redox kinetics. The speed vs. retention performance of the devices was improved via asymmetric layered tunnel barriers. The properties of molecules can be tailored by molecular design and synthetic chemistry. In this work, it was demonstrated that an alternate route to tune/enhance the properties of the hybrid device is to engineer the substrate (silicon) component. The molecules were attached to diode surfaces to tune redox voltages and improve charge-retention characteristics. N+ pockets embedded in P-Si well were utilized to obtain multiple states from a two-state molecule. The structure was also employed as a characterization tool in investigating the intrinsic properties of the molecules such as lateral conductivity within the monolayer. Redox molecules were also incorporated on an ultra thin gate-oxide of Si MOSFETs with the intent of studying the interaction of redox states with Si MOSFETs. The discrete molecular states were manifested in the drain current and threshold voltage characteristics of the device. This work demonstrates the multi-state modulation of Si-MOSFETs' drain current via redox-active molecular monolayers. Polymeric films of redox-active molecules were incorporated to improve the charge-density (ON/OFF ratio) and these structures may be employed for multi-state, low-voltage Flash memory applications. The most critical aspect of this research effort is to build a reliable and high density solid state memory technology. To this end, efforts were directed towards replacement of the electrolytic gate, which forms an extremely thin insulating double layer (˜10 nm) at the electrolyte-molecule interface, with a combination of an ultra-thin high-K dielectric layer and a metal gate. Several interesting observations were made in the research approaches towards integration and provided valuable

  20. In-situ atomic layer deposition growth of Hf-oxide

    International Nuclear Information System (INIS)

    Karavaev, Konstantin

    2010-01-01

    We have grown HfO 2 on Si(001) by atomic layer deposition (ALD) using HfCl 4 , TEMAHf, TDMAHf and H 2 O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl 4 experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO 2 . The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO 2 : contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

  1. Study of hafnium (IV) oxide nanoparticles synthesized by polymerized complex and polymer precursor derived sol-gel methods

    KAUST Repository

    Ramos-González, R.

    2010-03-01

    This work reports the preparation and characterization of hafnium (IV) oxide (HfO2) nanoparticles grown by derived sol-gel routes that involves the formation of an organic polymeric network. A comparison between polymerized complex (PC) and polymer precursor (PP) methods is presented. For the PC method, citric acid (CA) and ethylene glycol (EG) are used as the chelating and polymerizable reagents, respectively. In the case of PP method, poly(acrylic acid) (PAA) is used as the chelating reagent. In both cases, different precursor gels were prepared and the hafnium (IV) chloride (HfCl4) molar ratio was varied from 0.1 to 1.0 for the PC method and from 0.05 to 0.5 for the PP method. In order to obtain the nanoparticles, the precursors were heat treated at 500 and 800 °C. The thermal characterization of the precursor gels was carried out by thermogravimetric analysis (TGA) and the structural and morphological characterization by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD patterns of the samples obtained by both methods shows the formation of HfO2 at 500 °C with monoclinic crystalline phase. The PC method exhibited also the cubic phase. Finally, the HfO2 nanoparticles size (4 to 11 nm) was determined by TEM and XRD patterns. © (2010) Trans Tech Publications.

  2. Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering

    Science.gov (United States)

    Dhanunjaya, M.; Khan, S. A.; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

    2017-12-01

    We report on the swift heavy ion (SHI) irradiation induced crystallization and grain growth of HfO2 nanoparticles (NPs) within the HfO2 thin-films deposited by radio frequency (RF) magnetron sputtering technique. As grown films consisted of amorphous clusters of non-spherical HfO2 NPs. These amorphous clusters are transformed to crystalline grains under 100 MeV Ag ion irradiation. These crystallites are found to be spherical in shape and are well dispersed within the films. The average size of these crystallites is found to increase with fluence. Pristine and irradiated films have been characterized by high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), grazing incident x-ray diffraction (GIXRD) and photo luminescence (PL) measurements. The PL measurements suggested the existence of different types of oxygen related defects in pristine and irradiated samples. The observed results on crystallization and grain growth under the influence of SHI are explained within the framework of thermal spike model. The results are expected to provide useful information for understanding the electronic excitation induced crystallization of nanoparticles and can lead to useful applications in electronic and photonic devices.

  3. Synthesis of dense yttrium-stabilised hafnia pellets for nuclear applications by spark plasma sintering

    International Nuclear Information System (INIS)

    Tyrpekl, Vaclav; Holzhäuser, Michael; Hein, Herwin; Vigier, Jean-Francois; Somers, Joseph; Svora, Petr

    2014-01-01

    Graphical abstract: Densification of HfO 2 –Y 2 O 3 micro-beads by Spark Plasma Sintering High density pellets with homogenous distribution of Hf and Y serve as neutron absorbers. - Abstract: Dense yttrium–stabilised hafnia pellets (91.35 wt.% HfO 2 and 8.65 wt.% Y 2 O 3 ) were prepared by spark plasma sintering consolidation of micro-beads synthesised by the “external gelation” sol–gel technique. This technique allows a preparation of HfO 2 –Y 2 O 3 beads with homogenous yttria–hafnia solid solution. A sintering time of 5 min at 1600 °C was sufficient to produce high density pellets (over 90% of the theoretical density) with significant reproducibility. The pellets have been machined in a lathe to the correct dimensions for use as neutron absorbers in an experimental test irradiation in the High Flux Reactor (HFR) in Petten, Holland, in order to investigate the safety of americium based nuclear fuels

  4. Control of magnetism by electrical charge doping or redox reactions in a surface-oxidized Co thin film with a solid-state capacitor structure

    Science.gov (United States)

    Hirai, T.; Koyama, T.; Chiba, D.

    2018-03-01

    We have investigated the electric field (EF) effect on magnetism in a Co thin film with a naturally oxidized surface. The EF was applied to the oxidized Co surface through a gate insulator layer made of HfO2, which was formed using atomic layer deposition (ALD). The efficiency of the EF effect on the magnetic anisotropy in the sample with the HfO2 layer deposited at the appropriate temperature for the ALD process was relatively large compared to the previously reported values with an unoxidized Co film. The coercivity promptly and reversibly followed the variation in gate voltage. The modulation of the channel resistance was at most ˜0.02%. In contrast, a dramatic change in the magnetic properties including the large change in the saturation magnetic moment and a much larger EF-induced modulation of the channel resistance (˜10%) were observed in the sample with a HfO2 layer deposited at a temperature far below the appropriate temperature range. The response of these properties to the gate voltage was very slow, suggesting that a redox reaction dominated the EF effect on the magnetism in this sample. The frequency response for the capacitive properties was examined to discuss the difference in the mechanism of the EF effect observed here.

  5. Ferroelectric memory based on molybdenum disulfide and ferroelectric hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Xia, Qiangfei; Zhu, Wenjuan

    Recently, ferroelectric hafnium oxide (HfO2) was discovered as a new type of ferroelectric material with the advantages of high coercive field, excellent scalability (down to 2.5 nm), and good compatibility with CMOS processing. In this work, we demonstrate, for the first time, 2D ferroelectric memories with molybdenum disulfide (MoS2) as the channel material and aluminum doped HfO2 as the ferroelectric gate dielectric. A 16 nm thick layer of HfO2, doped with 5.26% aluminum, was deposited via atomic layer deposition (ALD), then subjected to rapid thermal annealing (RTA) at 1000 °C, and the polarization-voltage characteristics of the resulting metal-ferroelectric-metal (MFM) capacitors were measured, showing a remnant polarization of 0.6 μC/cm2. Ferroelectric memories with embedded ferroelectric hafnium oxide stacks and monolayer MoS2 were fabricated. The transfer characteristics after program and erase pulses revealed a clear ferroelectric memory window. In addition, endurance (up to 10,000 cycles) of the devices were tested and effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, were observed. This research can potentially lead to advances of 2D materials in low-power logic and memory applications.

  6. Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide

    International Nuclear Information System (INIS)

    Pereira, L.; Barquinha, P.; Fortunato, E.; Martins, R.

    2005-01-01

    In this work we have focused our attention on the role of the gas mixture (O 2 /Ar) used during HfO 2 thin film processing by r.f. magnetron sputtering, to produce dielectrics with suitable characteristics to be used as gate dielectric. Increasing the O 2 /Ar ratio from 0 to 0.2, the films properties (optical gap, permittivity, resistivity and compactness) are improved. At these conditions, films with a band gap around 5 eV were produced, indicating a good stoichiometry. Also the flat band voltage has a reduction of almost three times indicating also a reduction of the same order on the fixed charge density at the semiconductor-insulator interface. The dielectric constant is around 16 which is very good, since the surface of the silicon where the HfO 2 films were deposited contains a SiO 2 layer of about 3 nm that gives an effective dielectric constant above 20, close to the HfO 2 stoichiometric value (∼25). Further increase on the O 2 /Ar ratio does not produce significant improvements

  7. Thermal evolution of CaO-doped HfO{sub 2} films and powders

    Energy Technology Data Exchange (ETDEWEB)

    Barolin, S A; Sanctis, O A de [Lab. Materiales Ceramicos, FCEIyA, Universidad Nacional de Rosario, IFIR-CONICET (Argentina); Caracoche, M C; Martinez, J A; Taylor, M A; Pasquevich, A F [Departamento de Fisica, FCE, Universidad Nacional de La Plata, IFLP-CONICET (Argentina); Rivas, P C, E-mail: oski@fceia.unr.edu.a [Facultad de Ciencias Agronomicas y Forestales, Universidad Nacional de La Plata, IFLP (Argentina)

    2009-05-01

    Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SOFC because both are oxygen-ion conductors. The main challenge for these compounds is to reduce the relatively high value of the activation energies vacancies diffusion, which is influenced by several factors. In this work the thermal evolution of CaO-HfO{sub 2} materials have been investigated. (CaO)y-Hf(1-y)O(2-y) (y = 0.06, 0.14 y 0.2) coatings and powders were synthesized by chemical solution deposition (CSD). Films were deposited onto alumina substrates by Dip Coating technique, the burning of organic waste was carried out at 500 deg. C under normal atmosphere and then the films were thermally treated at intervals of temperature rising to a maximum temperature of 1250 deg. C. By means Glazing Incidence X-ray Diffraction (rho-2theta configuration) the phases were studied in the annealed films. On the other hand, the thermal evolution and crystallization process of powders were analyzed in-situ by HT-XRD. The phenomena crystallization occurred in films and powders were analyzed. The activation energies of diffusion of oxygen vacancies of HfO2-14 mole% CaO and HfO2-20 mole% CaO films were measured from the thermal evolution of the relaxation constant measured by Perturbed Angular Correlation Technique.

  8. Influence of using high kV and low m As techniques in the dose of patients submitted to X ray thorax examinations; Influencia do uso de tecnicas de alto kV e baixo mAs na dose em pacientes submetidos a exames de raios X de torax

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Paulo Marcio Campos de, E-mail: pmco@cdtn.b [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Engenharia Nuclear. Programa de Pos-Graduacao em Ciencias e Tecnicas Nucleares; Squair, Peterson Lima; Lacerda, Marco Aurelio de Sousa; Silva, Teogenes Augusto da, E-mail: pls@cdtn.b, E-mail: masl@cdtn.b, E-mail: silvata@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

    2011-07-01

    Dosimetric studies of patients subject to radiodiagnostic have got a special attention in Brazil although they are not required by the Brazilian legislation. However, in several Brazilian clinics there have been observed the use of techniques with lower peak voltage and higher electric charges values in spite the European Commission recommends the high voltages with low electric charge values in order to reduce the patient dose. This work compares three methodologies for evaluating the organ absorbed doses in patients undergoing chest x-rays at two techniques (80 k Vp and 10 m As; 120 k Vp and 2 m As): the PCXMC and CALDose{sub X} Monte Carlo based software and experimental measurements with T L dosimeters in a anthropomorphic phantom. The experimental measurements showed the technique with high voltage was dose reduced by approximately 60% in the entrance skin in relation to low voltage technique and the software showed similar dose reduction, shows the importance of adopting techniques which have high voltage values and low electrical charges, unlike usually found on chest x-rays in some hospitals and clinics in Brazil. (author)

  9. Effect of structural evolution of ZnO/HfO2 nanocrystals on Eu2+/Eu3+ emission in glass-ceramic waveguides for photonic applications.

    Science.gov (United States)

    Ghosh, Subhabrata; Bhaktha B N, Shivakiran

    2018-06-01

    Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO 2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦ C, both, Eu 2+ as well as Eu 3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦ C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu 3+ to Eu 2+ takes place in such ZnO/HfO 2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 6 5d [Formula: see text] 4f 7 energy level transition of Eu 2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm -1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.

  10. Study of diluting and absorber materials to control the reactivity during a postulated core meltdown accident in generation IV reactors

    International Nuclear Information System (INIS)

    Plevacova, Kamila

    2010-01-01

    In order to limit the consequences of a hypothetical core meltdown accident in Generation IV Sodium Fast Reactors, absorber materials in or near the core, such as boron carbide B 4 C, and diluting materials in the core catcher will be used to prevent recriticality within the mixture of molten oxide fuel and molten structures called corium. The aim of the PhD thesis was to select materials of both types and to understand their behaviour during their interaction with corium, from chemical and thermodynamic points of view. Concerning B 4 C, thermodynamic calculations and experiments agree with the formation of two immiscible phases at high temperature in the B 4 C - UO 2 system: one oxide and one boride. This separation of phases can reduce the efficiency of the neutrons absorption inside the molten fuel contained in the oxide phase. Moreover, volatilization of a part of the boron element can occur. According to these results, the necessary quantity of B 4 C to be introduced should be reconsidered for postulated severe accident sequence. Other solution could be the use of Eu 2 O 3 or HfO 2 as absorber material. These oxides form a solid solution with the oxide fuel. Concerning the diluting materials, mixed oxides Al 2 O 3 - HfO 2 and Al 2 O 3 - Eu 2 O 3 were preselected. These systems being completely unknown to date at high temperature in association with UO 2 , first points on the corresponding ternary phase diagrams were researched. Contrary to Al 2 O 3 - Eu 2 O 3 - UO 2 system, the Al 2 O 3 - HfO 2 - UO 2 mixture presents only one eutectic and thus only one solidification path which makes easier forecasting the behaviour of corium in the core catcher. (author)

  11. Study of diluting and absorber materials to control reactivity during a postulated core melt down accident in Generation IV reactors

    International Nuclear Information System (INIS)

    Plevacova, K.

    2010-01-01

    In order to limit the consequences of a hypothetical core meltdown accident in Generation IV Sodium Fast Reactors, absorber materials in or near the core, such as boron carbide B 4 C, and diluting materials in the core catcher will be used to prevent recriticality within the mixture of molten oxide fuel and molten structures called corium. The aim of the PhD thesis was to select materials of both types and to understand their behaviour during their interaction with corium, from chemical and thermodynamic point of view. Concerning B 4 C, thermodynamic calculations and experiments agree with the formation of two immiscible phases at high temperature in the B 4 C - UO 2 system: one oxide and one boride. This separation of phases can reduce the efficiency of the neutrons absorption inside the molten fuel contained in the oxide phase. Moreover, a volatilization of a part of the boron element can occur. According to these results, the necessary quantity of B 4 C to be introduced should be reconsidered for postulated severe accident sequence. Other solution could be the use of Eu 2 O 3 or HfO 2 as absorber material. These oxides form a solid solution with the oxide fuel. Concerning the diluting materials, mixed oxides Al 2 O 3 - HfO 2 and Al 2 O 3 - Eu 2 O 3 were preselected. These systems being completely unknown to date at high temperature in association with UO 2 , first points on the corresponding ternary phase diagrams were researched. Contrary to Al 2 O 3 - Eu 2 O 3 - UO 2 system, the Al 2 O 3 - HfO 2 - UO 2 mixture presents only one eutectic and thus only one solidification path which makes easier forecasting the behaviour of corium in the core catcher. (author) [fr

  12. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    International Nuclear Information System (INIS)

    Zhang, H.Y.; He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C.; Zhuge, L.J.; Wu, X.M.

    2015-01-01

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO x are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf 2+ and Hf 4+ . The HfErO films are composed with the structures of HfO 2 , HfO and ErO x , which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO 2 in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO 2 are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  13. Improving Performance via Blocking Layers in Dye-Sensitized Solar Cells Based on Nanowire Photoanodes.

    Science.gov (United States)

    Li, Luping; Xu, Cheng; Zhao, Yang; Chen, Shikai; Ziegler, Kirk J

    2015-06-17

    Electron recombination in dye-sensitized solar cells (DSSCs) results in significant electron loss and performance degradation. However, the reduction of electron recombination via blocking layers in nanowire-based DSSCs has rarely been investigated. In this study, HfO2 or TiO2 blocking layers are deposited on nanowire surfaces via atomic layer deposition (ALD) to reduce electron recombination in nanowire-based DSSCs. The control cell consisting of ITO nanowires coated with a porous shell of TiO2 by TiCl4 treatment yields an efficiency of 2.82%. The efficiency increases dramatically to 5.38% upon the insertion of a 1.3 nm TiO2 compact layer between the nanowire surface and porous TiO2 shell. This efficiency enhancement implies that porous sol-gel coatings on nanowires (e.g., via TiCl4 treatment) result in significant electron recombination in nanowire-based DSSCs, while compact coatings formed by ALD are more advantageous because of their ability to act as a blocking layer. By comparing nanowire-based DSSCs with their nanoparticle-based counterparts, we find that the nanowire-based DSSCs suffer more severe electron recombination from ITO due to the much higher surface area exposed to the electrolyte. While the insertion of a high band gap compact layer of HfO2 between the interface of the conductive nanowire and TiO2 shell improves performance, a comparison of the cell performance between TiO2 and HfO2 compact layers indicates that charge collection is suppressed by the difference in energy states. Consequently, the use of high band gap materials at the interface of conductive nanowires and TiO2 is not recommended.

  14. Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT

    Science.gov (United States)

    Panda, J.; Jena, K.; Swain, R.; Lenka, T. R.

    2016-04-01

    We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas (2DEG) density and surface potential for AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT). The developed model includes important parameters like polarization charge density at oxide/AlGaN and AlGaN/GaN interfaces, interfacial defect oxide charges and donor charges at the surface of the AlGaN barrier. The effects of two different gate oxides (Al2O3 and HfO2) are compared for the performance evaluation of the proposed MOSHEMT. The MOSHEMTs with Al2O3 dielectric have an advantage of significant increase in 2DEG up to 1.2 × 1013 cm-2 with an increase in oxide thickness up to 10 nm as compared to HfO2 dielectric MOSHEMT. The surface potential for HfO2 based device decreases from 2 to -1.6 eV within 10 nm of oxide thickness whereas for the Al2O3 based device a sharp transition of surface potential occurs from 2.8 to -8.3 eV. The variation in oxide thickness and gate metal work function of the proposed MOSHEMT shifts the threshold voltage from negative to positive realizing the enhanced mode operation. Further to validate the model, the device is simulated in Silvaco Technology Computer Aided Design (TCAD) showing good agreement with the proposed model results. The accuracy of the developed calculations of the proposed model can be used to develop a complete physics based 2DEG sheet charge density and threshold voltage model for GaN MOSHEMT devices for performance analysis.

  15. A spanish mineral of zirconium and hafnium. Separation of the two elements by liquid-liquid extraction, using tributyl phosphate as chelating agent

    International Nuclear Information System (INIS)

    Ruiz Sanchez, F.; Cruz Castillo, F. de la; Fernandez Cellini, R.

    1962-01-01

    The zirconium and Hafnium oxides are obtained from a Spanish mineral of zircon with an average contest of 55% in ZrO 2 -HfO 2 . An alkaline fusion to open the mineral, followed by a purification by crystallization as (Zr O-Hf O)Cl 2 H 2 O or as (Zr-Hf) (SO 4 ) 2 . 4H 2 O, is used. A discussion of the best experimental conditions for opening the mineral and of the purification method is made. (Author) 45 refs

  16. Depth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications

    KAUST Repository

    Alshareef, Husam N.

    2011-01-03

    Nanoscale La2O3 /HfO2 dielectric stacks have been studied using high resolution Rutherford backscattering spectrometry. The measured distance of the tail-end of the La signal from the dielectric/Si interface suggests that the origin of the threshold voltage shifts and the carrier mobility degradation may not be the same. Up to 20% drop in mobility and 500 mV shift in threshold voltage was observed as the La signal reached the Si substrate. Possible reasons for these changes are proposed, aided by depth profiling and bonding analysis. © 2011 The Electrochemical Society.

  17. (Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells

    KAUST Repository

    Tétreault, Nicolas

    2011-01-01

    Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al 2O 3, ZnO, SnO 2, Nb 2O 5, HfO 2, Ga 2O 3 and TiO 2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy. ©The Electrochemical Society.

  18. Monte Carlo simulations of multiple scattering effects in ERD measurements

    International Nuclear Information System (INIS)

    Doyle, Barney Lee; Arstila, Kai.; Nordlumd, K.; Knapp, James Arthur

    2003-01-01

    Multiple scattering effects in ERD measurements are studied by comparing two Monte Carlo simulation codes, representing different approaches to obtain acceptable statistics, to experimental spectra measured from a HfO 2 sample with a time-of-flight-ERD setup. The results show that both codes can reproduce the absolute detection yields and the energy distributions in an adequate way. The effect of the choice of the interatomic potential in multiple scattering effects is also studied. Finally the capabilities of the MC simulations in the design of new measurement setups are demonstrated by simulating the recoil energy spectra from a WC x N y sample with a low energy heavy ion beam.

  19. X-ray detection capabilities of plastic scintillators incorporated with hafnium oxide nanoparticles surface-modified with phenyl propionic acid

    Science.gov (United States)

    Hiyama, Fumiyuki; Noguchi, Takio; Koshimizu, Masanori; Kishimoto, Shunji; Haruki, Rie; Nishikido, Fumihiko; Yanagida, Takayuki; Fujimoto, Yutaka; Aida, Tsutomu; Takami, Seiichi; Adschiri, Tadafumi; Asai, Keisuke

    2018-01-01

    We synthesized plastic scintillators incorporated with HfO2 nanoparticles as detectors for X-ray synchrotron radiation. Nanoparticles with sizes of less than 10 nm were synthesized with the subcritical hydrothermal method. The detection efficiency of high-energy X-ray photons improved by up to 3.3 times because of the addition of the nanoparticles. Nanosecond time resolution was successfully achieved for all the scintillators. These results indicate that this method is applicable for the preparation of plastic scintillators to detect X-ray synchrotron radiation.

  20. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    Science.gov (United States)

    2014-09-01

    AFRL-RX-WP-JA-2014-0214 STRUCTURE AND OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) Neil R. Murphy AFRL...OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...publication is available at http://dx.doi.org/10.1016/j.optmat.2014.08.005 14. ABSTRACT Hafnium oxide (HfO2) films were grown by sputter-deposition by

  1. PLASMA THERMAL BARRIER COATINGS BASED ON ZIRCONIUM DIOXIDE WITH HIGH THERMAL STABILITY

    Directory of Open Access Journals (Sweden)

    O. G. Devoino

    2015-01-01

    Full Text Available The paper presents optimization of  processes for obtaining maximum content of tetragonal phase in the initial material and thermal barrier coatings (TBC based on zirconium dioxide and hafnium oxide.  Results of the investigations on phase composition of oxide HfO2 – ZrO2 – Y2O3  system have been given in the paper. The system represents  a microstructure which is similar to  zirconia dioxide and  transformed for its application at 1300 °C. The paper explains a mechanism of hafnium oxide influence on formation of the given microstructure. The research methodology has been based on complex metallography, X – ray diffraction and electron microscopic investigations of  structural elements of the composite plasma coating HfO2 – ZrO2 – Y2O system.In order to stabilize zirconium dioxide  dopant oxide should not only have an appropriate size of  metal ion, but also form a solid solution with the zirconia. This condition severely limits the number of possible stabilizers. In fact, such stabilization is possible only with the help of rare earth oxides (Y2O3, Yb2O3, CeO2, HfO2. Chemical purity of the applied materials plays a significant role for obtaining high-quality thermal barrier coatings. Hafnium oxide has been selected as powder for thermal barrier coatings instead of zirconium dioxide due to their similarities in structural modification, grating, chemical and physical properties and its high temperature structural transformations. It has been established that plasma thermal barrier HfO2 – ZrO2 – Y2O3 coatings consist of  one tetragonal phase. This phase is equivalent to a non-equilibrium tetragonal t' phase in the “zirconium dioxide stabilized with yttrium oxide” system. Affinity of  Hf+4 and Zr+4 cations leads to the formation of identical metastable phases during rapid quenching.

  2. Integration of gas phase condensed nanoparticles in YBa{sub 2}Cu{sub 3}O{sub 7-δ} multilayers; Integration von gasphasenkondensierten Nanopartikeln in YBa{sub 2}Cu{sub 3}O{sub 7-δ}-Multilagen

    Energy Technology Data Exchange (ETDEWEB)

    Sparing, Maria

    2012-07-01

    The control and targeted variation of nanoparticles properties is a central challenge in research on particle induced defects in YBa{sub 2}Cu{sub 3}O{sub 7-δ}. Using a combined Sputter-PLD system with inert gas condensation particle size and density integrated into the YBCO multilayers were varied independently. The cooling process influences the electrical properties of the multilayers. The effect of HfO2 and FePt nanoparticles on the structural and electrical properties was studied.

  3. Calcium-Magnesium-Aluminosilicate (CMAS) Reactions and Degradation Mechanisms of Advanced Environmental Barrier Coatings

    Science.gov (United States)

    Ahlborg, Nadia L.; Zhu, Dongming

    2013-01-01

    The thermochemical reactions between calcium-magnesium-aluminosilicate- (CMAS-) based road sand and several advanced turbine engine environmental barrier coating (EBC) materials were studied. The phase stability, reaction kinetics and degradation mechanisms of rare earth (RE)-silicates Yb2SiO5, Y2Si2O7, and RE-oxide doped HfO2 and ZrO2 under the CMAS infiltration condition at 1500 C were investigated, and the microstructure and phase characteristics of CMAS-EBC specimens were examined using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Experimental results showed that the CMAS dissolved RE-silicates to form crystalline, highly non-stoichiometric apatite phases, and in particular attacking the silicate grain boundaries. Cross-section images show that the CMAS reacted with specimens and deeply penetrated into the EBC grain boundaries and formed extensive low-melting eutectic phases, causing grain boundary recession with increasing testing time in the silicate materials. The preliminary results also showed that CMAS reactions also formed low melting grain boundary phases in the higher concentration RE-oxide doped HfO2 systems. The effect of the test temperature on CMAS reactions of the EBC materials will also be discussed. The faster diffusion exhibited by apatite and RE-doped oxide phases and the formation of extensive grain boundary low-melting phases may limit the CMAS resistance of some of the environmental barrier coatings at high temperatures.

  4. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

    Science.gov (United States)

    Huang, Fei; Chen, Xing; Liang, Xiao; Qin, Jun; Zhang, Yan; Huang, Taixing; Wang, Zhuo; Peng, Bo; Zhou, Peiheng; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Liu, Ming; Liu, Qi; Tian, He; Bi, Lei

    2017-02-01

    Owing to their prominent stability and CMOS compatibility, HfO 2 -based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO 2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

  5. Microstructure and optical properties of Pr3+-doped hafnium silicate films

    Science.gov (United States)

    2013-01-01

    In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, while the emission properties have been studied by means of photoluminescence (PL) and PL excitation (PLE) spectroscopies. It was observed that a post-annealing treatment favors the phase separation in hafnium silicate matrix being more evident at 950°C. The HfO2 phase demonstrates a pronounced crystallization in tetragonal phase upon 950°C annealing. Pr3+ emission appeared at TA = 950°C, and the highest efficiency of Pr3+ ion emission was detected upon a thermal treatment at 1,000°C. Analysis of the PLE spectra reveals an efficient energy transfer from matrix defects towards Pr3+ ions. It is considered that oxygen vacancies act as effective Pr3+ sensitizer. Finally, a PL study of undoped HfO2 and HfSiOx matrices is performed to evidence the energy transfer. PMID:23336520

  6. MOSFET technologies for double-pole four-throw radio-frequency switch

    CERN Document Server

    Srivastava, Viranjay M

    2014-01-01

    This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches.

  7. Effects of trimethylaluminium and tetrakis(ethylmethylamino) hafnium in the early stages of the atomic-layer-deposition of aluminum oxide and hafnium oxide on hydroxylated GaN nanoclusters.

    Science.gov (United States)

    León-Plata, Paola A; Coan, Mary R; Seminario, Jorge M

    2013-10-01

    We calculate the interactions of two atomic layer deposition (ALD) reactants, trimethylaluminium (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH) with the hydroxylated Ga-face of GaN clusters when aluminum oxide and hafnium oxide, respectively, are being deposited. The GaN clusters are suitable as testbeds for the actual Ga-face on practical GaN nanocrystals of importance not only in electronics but for several other applications in nanotechnology. We find that TMA spontaneously interacts with hydroxylated GaN; however it does not follow the atomic layer deposition reaction path unless there is an excess in potential energy introduced in the clusters at the beginning of the optimization, for instance, using larger bond lengths of various bonds in the initial structures. TEMAH also does not interact with hydroxylated GaN, unless there is an excess in potential energy. The formation of a Ga-N(CH3)(CH2CH3) bond during the ALD of HfO2 using TEMAH as the reactant without breaking the Hf-N bond could be the key part of the mechanism behind the formation of an interface layer at the HfO2/GaN interface.

  8. The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Guan, Yan; Liu, Xiaohua; Zhou, Dayu; Xu, Jin; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    A wealth of studies have confirmed that the low-field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro-mechanism. Recently, HfO 2 thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub-coercive polarization reversal properties were investigated for 10 nm thick Si-doped HfO 2 thin films. The applicability of the Rayleigh law to ultra-thin ferroelectric films was first confirmed, indicating the existence of a multi-domain structure. Since the grain size is about 20-30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Development of damage-resistant sputtered-oxide optical coatings for use at 248 NM

    International Nuclear Information System (INIS)

    Pawlewicz, W.T.; Martin, P.M.; Hays, D.D.; Mann, I.B.

    1981-10-01

    This report summarizes the results of a six-month effort to develop damage-resistant Kr*F laser mirrors by using and refining reactive sputter deposition techniques for the fabricaton of multilayer oxide optical coatings. Mirror performance goals included a reflectivity of 99% at 248 nm and a laser damage threshold of 5 J/cm 2 for 20 ns pulses. Oxide multilayer coating combinations selected for development were SiO 2 /Al 2 O 3 , SiO 2 /HfO 2 and SiO 2 /Y 2 O 3 . Selection was based on review and compilation of the optical properties of oxide materials reported in the recent literature. Twenty-eight coatings of selected designs were fabricated on LLNL substrates for laser damage testing by LLNL. Forty other coatings were fabricated on PNL substrates for optical, microstructural and topographical characterization by PNL aimed at optimization of their performance. Specimens for damage testing consisted of single layers of Al 2 O 3 , HfO 2 and Y 2 O 3 in thicknesses of lambda/2, 3lambda/2 and 2lambda at 248 nm plus high reflectors of the design LL (HL)/sup m/ HLL

  10. Advanced passivation techniques for Si solar cells with high-κ dielectric materials

    Science.gov (United States)

    Geng, Huijuan; Lin, Tingjui; Letha, Ayra Jagadhamma; Hwang, Huey-Liang; Kyznetsov, Fedor A.; Smirnova, Tamara P.; Saraev, Andrey A.; Kaichev, Vasily V.

    2014-09-01

    Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al2O3, HfO2) and their compounds H(Hf)A(Al)O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al2O3 film has been found to provide negative fixed charge (-6.4 × 1011 cm-2), whereas HfO2 film provides positive fixed charge (3.2 × 1012 cm-2). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO2 film would provide better passivation properties than that of the ALD-Al2O3 film in this research work.

  11. High-temperature behavior of oxide dispersion strengthening CoNiCrAlY

    Energy Technology Data Exchange (ETDEWEB)

    Unocic, Kinga A. [ORNL; Bergholz, Jan [Forschungszentrum Jülich GmbH; Huang, T [Institute for Energy and Climate Research, IEK-2, Forschungszentrum Jülich GmbH; Naumenko, Dymtro [Forschungszentrum Julich GmbH (Julich Research Centre), Germany; Pint, Bruce A. [ORNL; Vaßen, Robert [Forschungszentrum Julich, Germany; Quadakkers, Willem Joseph [Forschungszentrum Julich, Germany

    2017-11-01

    To fabricate oxide dispersion strengthened bond coatings, commercial Co–30wt-%Ni–20Cr–8Al–0•4Y powder was milled with 2% additions of Al2O3, Y2O3 or Y2O3 + HfO2. Low-pressure plasma sprayed, free-standing specimens were oxidised in air + 10%H2O at 1100 °C both isothermally (100 h) and in 500, 1-h cycles. Dry air cyclic testing conducted at both ORNL and FZJ showed remarkably similar results. In general, the water vapour addition caused more scale spallation. Two LPPS specimens without oxide additions were tested for comparison. The specimens with 2%Al2O3 addition exhibited the best behaviour as the powder already contained 0•4%Y. Additions of 2%Y2O3 and especially 1%Y2O3 + 1%HfO2 resulted in over-doping as evidenced by high mass gains and the formation of Y- and Hf-rich pegs. Scanning transmission electron microscopy of the isothermal specimens showed no Hf and/or Y segregation to the alumina scale grain boundaries in the over-doped specimens.

  12. Optical control of capacitance in a metal-insulator-semiconductor diode with embedded metal nanoparticles

    Science.gov (United States)

    Mikhelashvili, V.; Ankonina, G.; Kauffmann, Y.; Atiya, G.; Kaplan, W. D.; Padmanabhan, R.; Eisenstein, G.

    2017-06-01

    This paper describes a metal-insulator-semiconductor (MIS) capacitor with flat capacitance voltage characteristics and a small quadratic voltage capacitance coefficient. The device characteristics resemble a metal-insulator-metal diode except that here the capacitance depends on illumination and exhibits a strong frequency dispersion. The device incorporates Fe nanoparticles (NPs), mixed with SrF2, which are embedded in an insulator stack of SiO2 and HfO2. Positively charged Fe ions induce dipole type traps with an electronic polarization that is enhanced by photogenerated carriers injected from the substrate and/or by inter nanoparticle exchange of carriers. The obtained characteristics are compared with those of five other MIS structures: two based on Fe NPs, one with and the other without SrF2 sublayers. Additionally, devices contain Co NPs embedded in SrF2 sublayers, and finally, two structures have no NPs, with one based on a stack of SiO2 and HfO2 and the other which also includes SrF2. Only structures containing Fe NPs, which are incorporated into SrF2, yield a voltage independent capacitance, the level of which can be changed by illumination. These properties are essential in radio frequency/analog mixed signal applications.

  13. Phase composition of Bi2O3 specimens doped with Ti, Zr and Hf

    Directory of Open Access Journals (Sweden)

    Poleti Dejan

    2012-01-01

    Full Text Available Powder mixtures of α-Bi2O3 containing 2, 5 and 10 mole % of TiO2, ZrO2 or HfO2 were homogenized, heated at 820ºC for 24 h and quenched in air. X-ray powder diffraction technique was used to characterize the prepared samples. In all cases metastable Bi2O3 polymorphs, γ-Bi2O3 or β-Bi2O3, are found as single or major phases. Addition of Ti4+ ions stabilizes γ-Bi2O3 polymorph, while either Zr4+ or Hf4+ ions stabilize β-Bi2O3 polymorph. In the samples with 2 and 5 mole % of TiO2 the presence of even two γ-Bi2O3 phases (Bi12TiO20 compound and a very low Ti-doped γ-Bi2O3 was established. Similarly, in the sample with 2 mole % of HfO2 two β-Bi2O3 phases were found. Phase composition of prepared samples, values of unit cell parameters and the appearance of two polymorphs with identical crystal structure but different unit cell parameters are discussed and compared with known data.

  14. Electrical characteristic of metal-oxide-semiconductor with NiSi2 nanocrystals embedded in oxide layer

    Science.gov (United States)

    Tsai, Jenn-Kai; Lo, Ikai; Gau, M. H.; Chen, Y. L.; Yeh, P. H.; Chang, T. C.

    2006-03-01

    The nano-structured electronic devices have received more attention recently. Metal-oxide-semiconductor structure with NiSi2 nanocrystals embedded in the oxide layer, HfO2/SiO2, has been fabricated. Comparing with conventional ones, it could be operated under lower voltage and faster program/erase speed and has better endurance and retention. We have measured the temperature-dependent tunneling V-I curve on these HfO2/SiO2 nano-structured devices for the temperature from 1.2K to 300K. The results show an abnormal electrical characteristic. The tunneling V-I characteristics appear a new threshold voltage in the low temperature region, from 30K to 100K, while applied a negative voltage. The abnormal threshold voltage disappears when the temperature higher than 150K or lower than 30K. We attribute the new threshold voltage to the discrete quantum states of NiSi2 nanocrystals in the oxide layer.

  15. Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

    Science.gov (United States)

    Ke, M.; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S.

    2016-07-01

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (Dit) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al2O3/GeOx/n-Ge and HfO2/Al2O3/GeOx/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al2O3 and HfO2/Al2O3 combined with plasma post oxidation. It is found that the slow traps can locate in the GeOx interfacial layer, not in the ALD Al2O3 layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al2O3/GeOx/Ge gate stacks, with changing the thickness of GeOx, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeOx, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeOx.

  16. Tunnel field-effect transistor with two gated intrinsic regions

    Directory of Open Access Journals (Sweden)

    Y. Zhang

    2014-07-01

    Full Text Available In this paper, we propose and validate (using simulations a novel design of silicon tunnel field-effect transistor (TFET, based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of switching performance compared with more conventional devices based on p-i-n structure. With independent gate voltages applied to two gated intrinsic regions, band-to-band tunneling (BTBT could take place at the p-n junction, and no abrupt degenerate doping profile is required. We developed single-side-gate (SSG structure and double-side-gate (DSG structure. SSG devices with HfO2 gate dielectric have a point subthreshold swing of 9.58 mV/decade, while DSG devices with polysilicon gate electrode material and HfO2 gate dielectric have a point subthreshold swing of 16.39 mV/decade. These DSG devices have ON-current of 0.255 μA/μm, while that is lower for SSG devices. Having two nano-scale independent gates will be quite challenging to realize with good uniformity across the wafer and the improved behavior of our TFET makes it a promising steep-slope switch candidate for further investigations.

  17. Oxidation Study of an Ultra High Temperature Ceramic Coatings Based on HfSiCN

    Science.gov (United States)

    Sacksteder, Dagny; Waters, Deborah L.; Zhu, Dongming

    2018-01-01

    High temperature fiber-reinforced ceramic matrix composites (CMCs) are important for aerospace applications because of their low density, high strength, and significantly higher-temperature capabilities compared to conventional metallic systems. The use of the SiCf/SiC and Cf/SiC CMCs allows the design of lighter-weight, more fuel efficient aircraft engines and also more advanced spacecraft airframe thermal protection systems. However, CMCs have to be protected with advanced environmental barrier coatings when they are incorporated into components for the harsh environments such as in aircraft engine or spacecraft applications. In this study, high temperature oxidation kinetics of an advanced HfSiCN coating on Cf/SiC CMC substrates were investigated at 1300 C, 1400 C, and 1500 C by using thermogravimetric analysis (TGA). The coating oxidation reaction parabolic rate constant and activation energy were estimated from the experimental results. The oxidation reaction studies showed that the coatings formed the most stable, predominant HfSiO4-HfO2 scales at 1400 C. A peroxidation test at 1400 C then followed by subsequent oxidation tests at various temperatures also showed more adherent scales and slower scale growth because of reduced the initial transient oxidation stage and increased HfSiO4-HfO2 content in the scales formed on the HfSiCN coatings.

  18. Advanced passivation techniques for Si solar cells with high-κ dielectric materials

    International Nuclear Information System (INIS)

    Geng, Huijuan; Lin, Tingjui; Letha, Ayra Jagadhamma; Hwang, Huey-Liang; Kyznetsov, Fedor A.; Smirnova, Tamara P.; Saraev, Andrey A.; Kaichev, Vasily V.

    2014-01-01

    Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al 2 O 3 , HfO 2 ) and their compounds H (Hf) A (Al) O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al 2 O 3 film has been found to provide negative fixed charge (−6.4 × 10 11  cm −2 ), whereas HfO 2 film provides positive fixed charge (3.2 × 10 12  cm −2 ). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO 2 film would provide better passivation properties than that of the ALD-Al 2 O 3 film in this research work.

  19. Atomic Layer Deposition of SnO2 on MXene for Li-Ion Battery Anodes

    KAUST Repository

    Ahmed, Bilal

    2017-02-24

    In this report, we show that oxide battery anodes can be grown on two-dimensional titanium carbide sheets (MXenes) by atomic layer deposition. Using this approach, we have fabricated a composite SnO2/MXene anode for Li-ion battery applications. The SnO2/MXene anode exploits the high Li-ion capacity offered by SnO2, while maintaining the structural and mechanical integrity by the conductive MXene platform. The atomic layer deposition (ALD) conditions used to deposit SnO2 on MXene terminated with oxygen, fluorine, and hydroxyl-groups were found to be critical for preventing MXene degradation during ALD. We demonstrate that SnO2/MXene electrodes exhibit excellent electrochemical performance as Li-ion battery anodes, where conductive MXene sheets act to buffer the volume changes associated with lithiation and delithiation of SnO2. The cyclic performance of the anodes is further improved by depositing a very thin passivation layer of HfO2, in the same ALD reactor, on the SnO2/MXene anode. This is shown by high-resolution transmission electron microscopy to also improve the structural integrity of SnO2 anode during cycling. The HfO2 coated SnO2/MXene electrodes demonstrate a stable specific capacity of 843 mAh/g when used as Li-ion battery anodes.

  20. Ab Initio Study of Electronic Transport in Cubic-HfO2 Grain Boundaries

    Directory of Open Access Journals (Sweden)

    Elena Degoli

    2017-01-01

    Full Text Available In polycrystalline materials the grain boundaries (GBs are particularly important as they can act as a sink for atom defects and impurities, which may drive structural transformation of the materials and consequently modify their properties. Characterising the structure and properties of GBs is critical for understanding and controlling material property. Here, we investigated how GBs can modify the structural, electronic, and transport properties of the polycrystalline material HfO2. In general, grain boundaries are considered to be detrimental to the physical stability and electronic transport in HfO2. Anyway, studying by first principles the two most stable and common types of GBs, the tilt and the twist, we found substantial differences on the impact they have on the material properties. In fact, while tilt defects create channels of different sizes and shapes in hafnia along which the electronic transport is stronger in relation to leakage current through GBs, twist defects create a sort of amorphous structure that tends to resemble the bulk and which is independent of the number of rotated planes/atoms.

  1. Ore geochemistry, zircon mineralogy, and genesis of the Sakharjok Y-Zr deposit, Kola Peninsula, Russia

    Science.gov (United States)

    Zozulya, D. R.; Lyalina, L. M.; Eby, N.; Savchenko, Ye. E.

    2012-04-01

    The Sakharjok Y-Zr deposit in Kola Peninsula is related to the fissure alkaline intrusion of the same name. The intrusion ˜7 km in extent and 4-5 km2 in area of its exposed part is composed of Neoarchean (2.68-2.61 Ma) alkali and nepheline syenites, which cut through the Archean alkali granite and gneissic granodiorite. Mineralization is localized in the nepheline syenite body as linear zones 200-1350 m in extent and 3-30 m in thickness, which strike conformably to primary magmatic banding and trachytoid texture of nepheline syenite. The ore is similar to the host rocks in petrography and chemistry and only differs from them in enrichment in zircon, britholite-(Y), and pyrochlore. Judging from geochemical attributes (high HSFE and some incompatible element contents (1000-5000 ppm Zr, 200-600 ppm Nb, 100-500 ppm Y, 0.1-0.3 wt % REE, 400-900 ppm Rb), REE pattern, Th/U, Y/Nb, and Yb/Ta ratios), nepheline syenite was derived from an enriched mantle source similar to that of contemporary OIB and was formed as an evolved product of long-term fractional crystallization of primary alkali basaltic melt. The ore concentrations are caused by unique composition of nepheline syenite magma (high Zr, Y, REE, Nb contents), which underwent subsequent intrachamber fractionation. Mineralogical features of zircon-the main ore mineral—demonstrate its long multistage crystallization. The inner zones of prismatic crystals with high ZrO2/HfO2 ratio (90, on average) grew during early magmatic stage at a temperature of 900-850°C. The inner zones of dipyramidal crystals with average ZrO2/HfO2 = 63 formed during late magmatic stage at a temperature of ˜500°C. The zircon pertaining to the postmagmatic hydrothermal stage is distinguished by the lowest ZrO2/HfO2 ratio (29, on average), porous fabric, abundant inclusions, and crystallization temperature below 500°C. The progressive decrease in ZrO2/HfO2 ratio was caused by evolution of melt and postmagmatic solution. The metamorphic zircon rims relics of earlier crystals and occurs as individual rhythmically zoned grains with an averaged ZrO2/HfO2 ratio (45, on average) similar to that of the bulk ore composition. The metamorphic zircon is depleted in uranium in comparison with magmatic zircon, owing to selective removal of U by aqueous metamorphic solutions. Zircon from the Sakharjok deposit is characterized by low concentrations of detrimental impurities, in particular, contains only 10-90 ppm U and 10-80 ppm Th, and thus can be used in various fields of application.

  2. /TiN Resistive RAM (RRAM) Cells

    Science.gov (United States)

    Chen, Z. X.; Fang, Z.; Wang, Y.; Yang, Y.; Kamath, A.; Wang, X. P.; Singh, N.; Lo, G.-Q.; Kwong, D.-L.; Wu, Y. H.

    2014-11-01

    We present a study of Ni silicide as the bottom electrode in HfO2-based resistive random-access memory cells. Various silicidation conditions were used for each device, yielding different Ni concentrations within the electrode. A higher concentration of Ni in the bottom electrode was found to cause a parasitic SET operation during certain RESET operation cycles, being attributed to field-assisted Ni cation migration creating a Ni filament. As such, the RESET is affected unless an appropriate RESET voltage is used. Bottom electrodes with lower concentrations of Ni were able to switch at ultralow currents (RESET current <1 nA) by using a low compliance current (<500 nA). The low current is attributed to the tunneling barrier formed by the native SiO2 at the Ni silicide/HfO2 interface.

  3. Present situation of the technology used for preparation of nuclear-grade zirconium (hafnium) and study on a new process

    International Nuclear Information System (INIS)

    Huang Daifu; Zhou Mi; Li Chunxiang; Kong Dongcheng; Yang Lifeng; Xiao Shaohua

    2010-01-01

    This paper introduces the situation of natural resource, separation and processing methods of zirconium and hafnium, as well as their application in our country and their position in national economy. The paper also analyzes the present status of the technology and techniques used for Zr-Hf separation both at home and abroad, with the emphasis on elaborating the new solvent extraction technology for preparing nuclear-grade ZrO 2 -HfO 2 in a TBP-HNO 3 -X system from ZrOCl 2 ·8H 2 O used as raw material. Its principal advantages include no emulsion, high extraction efficiency, good separation, steady and reliable nuclear-grade quality of both zirconium and hafnium products, easy operation and control. In addition, the problems, such as equipment corrosion and waste water treatment, can be easily solved. Being advanced and practical, the new technology can save resource and energy, and is favorable for the environment protection. (authors)

  4. Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

    International Nuclear Information System (INIS)

    Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

    2011-01-01

    In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

  5. Oxidation behavior of Hf-modified platinum aluminide coatings during thermal cycling

    Directory of Open Access Journals (Sweden)

    Liya Ye

    2018-02-01

    Full Text Available Platinum aluminide coatings with different Hf contents were fabricated by using HfCl4. The oxidation kinetics and the rumpling behavior of oxide scale were investigated. After thermal cycling, the coating with 0.46 wt% Hf showed least weight gain. With the increase of Hf content, rumpling extent of the scale decreased. Meanwhile, HfO2 preferentially formed in the scale resulting in the increase of scale thickness. The oxidation of excessive Hf even caused the spallation of the scale. The results in the present study indicate that although Hf plays an important role in decreasing rumpling extent of TGO, the oxidation of Hf decreases the adhesion of the scale. Keywords: Pt-Al coating, Hf, Oxidation, Rumpling

  6. Diagnostics for the detection and evaluation of laser induced damage

    International Nuclear Information System (INIS)

    Sheehan, L.; Kozlowski, M.; Rainer, F.

    1995-01-01

    The Laser Damage and Conditioning Group at LLNL is evaluating diagnostics which will help make damage testing more efficient and reduce the risk of damage during laser conditioning. The work to date has focused on photoacoustic and scattered light measurements on 1064-nm wavelength HfO 2 /SiO 2 multilayer mirror and polarizer coatings. Both the acoustic and scatter diagnostics have resolved 10 μm diameter damage points in these coatings. Using a scanning stage, the scatter diagnostic can map both intrinsic and laser-induced scatter. Damage threshold measurements obtained using scatter diagnostics compare within experimental error with those measured using 100x Nomarski microscopy. Scatter signals measured during laser conditioning can be used to detect damage related to nodular defects

  7. Preparation of dielectrics HR mirrors from colloidal oxide suspensions containing organic polymer binders

    International Nuclear Information System (INIS)

    Thomas, I.M.

    1994-01-01

    Colloidal suspensions of oxides have been used to prepare dielectric HR (high reflective) mirrors, specifically for high power fusion case applications, on substrates up to 38 cm square using a meniscus coater. These coatings consist of porous quarterwave layers of alternating high and low refractive index oxides. Silica was used as the low index oxide and AlOOH, ZrO 2 , or HfO 2 as the high index material. Coatings were weak because of low particle-to-particle adhesion. Use of organic polymer binders in the high index component was found to increase strength, thereby improving the laser damage threshold and also reducing the number of layers required for 99% reflection due to increased refractive index

  8. Understanding the electrolyte background for biochemical sensing with ion-sensitive field-effect transistors.

    Science.gov (United States)

    Tarasov, Alexey; Wipf, Mathias; Stoop, Ralph L; Bedner, Kristine; Fu, Wangyang; Guzenko, Vitaliy A; Knopfmacher, Oren; Calame, Michel; Schönenberger, Christian

    2012-10-23

    Silicon nanowire field-effect transistors have attracted substantial interest for various biochemical sensing applications, yet there remains uncertainty concerning their response to changes in the supporting electrolyte concentration. In this study, we use silicon nanowires coated with highly pH-sensitive hafnium oxide (HfO(2)) and aluminum oxide (Al(2)O(3)) to determine their response to variations in KCl concentration at several constant pH values. We observe a nonlinear sensor response as a function of ionic strength, which is independent of the pH value. Our results suggest that the signal is caused by the adsorption of anions (Cl(-)) rather than cations (K(+)) on both oxide surfaces. By comparing the data to three well-established models, we have found that none of those can explain the present data set. Finally, we propose a new model which gives excellent quantitative agreement with the data.

  9. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    Science.gov (United States)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  10. Transport properties of bilayer graphene due to charged impurity scattering: Temperature-dependent screening and substrate effects

    Science.gov (United States)

    Linh, Dang Khanh; Khanh, Nguyen Quoc

    2018-03-01

    We calculate the zero-temperature conductivity of bilayer graphene (BLG) impacted by Coulomb impurity scattering using four different screening models: unscreened, Thomas-Fermi (TF), overscreened and random phase approximation (RPA). We also calculate the conductivity and thermal conductance of BLG using TF, zero- and finite-temperature RPA screening functions. We find large differences between the results of the models and show that TF and finite-temperature RPA give similar results for diffusion thermopower Sd. Using the finite-temperature RPA, we calculate temperature and density dependence of Sd in BLG on SiO2, HfO2 substrates and suspended BLG for different values of interlayer distance c and distance between the first layer and the substrate d.

  11. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe

    2013-01-01

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO 2 film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up

  12. Metal Oxide Nanoparticle Photoresists for EUV Patterning

    KAUST Repository

    Jiang, Jing

    2014-01-01

    © 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have achieved high resolution (∼22 nm) at a very high EUV sensitivity (4.2 mJ/cm2). Further investigations into the patterning process suggests a ligand displacement mechanism, wherein, any combination of a metal oxide with the correct ligand could generate patterns in the presence of the suitable photoactive compound. The current investigation extends this study by developing new nanoparticle compositions with transdimethylacrylic acid and o-toluic acid ligands. This study describes their synthesis and patterning performance under 248 nm KrF laser (DUV) and also under 13.5 nm EUV exposures (dimethylacrylate nanoparticles) for the new resist compositions.

  13. Transparent nanoscale floating gate memory using self-assembled bismuth nanocrystals in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) pyrochlore thin films grown at room temperature.

    Science.gov (United States)

    Jung, Hyun-June; Yoon, Soon-Gil; Hong, Soon-Ku; Lee, Jeong-Yong

    2012-07-03

    Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al(2) O(3) and HfO(2) layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

    KAUST Repository

    Duran Retamal, Jose Ramon

    2014-11-03

    A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.

  15. Application of a high-temperature neutron diffraction apparatus to the study of refractory oxides

    International Nuclear Information System (INIS)

    Aldebert, P.; Badie, J.-M.; Buevoz, J.-L.; Roult, G.

    1975-01-01

    A furnace allowing studies of refractory materials by neutron diffraction 'in situ' up to 2500 deg C is described. It is fitted on to a new type of time of flight spectrometer the pulsed source of which is given by a correlation chopper. The advantages of this technique in comparison with fixed-wavelength goniometers are developed. The examination at high temperature of several refractory oxydes has been carried out with this experimental device. The thermal expansion curve of α alumina has been established with accuracy up to near the melting point. Several high temperature cristalline forms X for La 2 O 3 , tetragonal and cubic for ZrO 2 , tetragonal for HfO 2 , have been studied. Concerning the latter two, the case of their solid solutions 2MO 2 -M' 2 O 3 (with M=Hf or Zr and M'=La or Y) has also been considered, at room temperature only [fr

  16. Charge transport and bipolar switching mechanism in a Cu/HfO2/Pt resistive switching cell

    International Nuclear Information System (INIS)

    Tan Tingting; Guo Tingting; Wu Zhihui; Liu Zhengtang

    2016-01-01

    Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO 2 /Pt structure in the application of resistive random access memory (RRAM). The conduction mechanism of the structure is characterized to be SCLC conduction. The dependence of resistances in both high resistance state (HRS) and low resistance state (LRS) on the temperature and device area are studied. Then, the composition and chemical bonding state of Cu and Hf at Cu/HfO 2 interface region are analyzed by x-ray photoelectron spectroscopy (XPS). Combining the electrical characteristics and the chemical structure at the interface, a model for the resistive switching effect in Cu/HfO 2 /Pt stack is proposed. According to this model, the generation and recovery of oxygen vacancies in the HfO 2 film are responsible for the resistance change. (paper)

  17. Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector

    Science.gov (United States)

    Liu, Yuh-Shiuan; Saniul Haq, Abul Fazal Muhammad; Mehta, Karan; Kao, Tsung-Ting; Wang, Shuo; Xie, Hongen; Shen, Shyh-Chiang; Yoder, P. Douglas; Ponce, Fernando A.; Detchprohm, Theeradetch; Dupuis, Russell D.

    2016-11-01

    An optically pumped vertical-cavity surface-emitting laser with an electrically conducting n-type distributed Bragg reflector was achieved at 374.9 nm. An epitaxially grown 40-pair n-type AlGaN/GaN distributed Bragg reflector was used as the bottom mirror, while the top mirror was formed by a dielectric distributed Bragg reflector composed of seven pairs of HfO2/SiO2. A numerical simulation for the optical mode clearly demonstrated that a high confinement factor was achieved and the threshold pumping power density at room temperature was measured as 1.64 MW/cm2. The achieved optically pumped laser demonstrates the potential of utilizing an n-type distributed Bragg reflector for surface-emitting optical devices.

  18. Solid state chemistry of rare earth oxides. Technical progress report, 1975--1976

    International Nuclear Information System (INIS)

    Eyring, L.; Skarnulis, A.J.; Tuenge, R.T.; Von Dreele, R.B.

    1976-01-01

    It has been demonstrated that electron microscope images obtained at about 3A resolution for Pr 7 O 12 are in agreement with calculated images based upon known structures. This establishes the efficacy of crystal structure image interpretation in structural terms, including the defect structure and mechanism of phase reactions, for these types of related phases whose structures are as yet beyond conventional means to determine. Further work on the epsilon (Pr 10 O 18 ) phase is reported both utilizing electron optical methods and single crystal X-ray techniques. The ternary ceramic system HfO 2 .xEr 2 O 3 is being examined using electron optical techniques and ordering not hitherto reported is being observed. An interactive crystal structure image calculation system is being developed which will permit the immediate comparison of enhanced images synthesized from trial structures (including defects) and displayed in juxtaposition on a graphics unit. 22 fig

  19. Graphene-graphite oxide field-effect transistors.

    Science.gov (United States)

    Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

    2012-03-14

    Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

  20. Surface, interface and thin film characterization of nano-materials using synchrotron radiation

    International Nuclear Information System (INIS)

    Kimura, Shigeru; Kobayashi, Keisuke

    2005-01-01

    From the results of studies in the nanotechnology support project of the Ministry of Education, Culture, Sports, Science and Technology of Japan, several investigations on the surface, interface and thin film characterization of nano-materials are described; (1) the MgB 2 thin film by X-ray diffraction, (2) the magnetism of the Pt thin film on a Co film by X-ray magnetic circular dichroism measurement, (3) the structure and physical properties of oxygen molecules absorbed in a micro hole of the cheleted polymer crystal by the direct observation in X-ray powder diffraction, and (4) the thin film gate insulator with a large dielectric constant, thermally treated HfO 2 /SiO 2 /Si, by X-ray photoelectron spectroscopy. (M.H.)

  1. Multistate Resistive Switching Memory for Synaptic Memory Applications

    KAUST Repository

    Hota, Mrinal Kanti

    2016-07-12

    Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  2. Proceedings of the Joint International Symposium on Molten Salts. Held in Honolulu Hawaii on 18-23 October 1987. Volume 87-7

    Science.gov (United States)

    1987-01-01

    theoretical capacity of either 14 or 48 Ah on the upper plateau. The slurry -formed negative electrodes (5) contained3 53 at. % Li-Al alloy of either...of CeO2 in a pure Na2So4 melt is compared to that in a 0.7 Na2 so4 - 0.3NaVO3 solution. 1. Solubilities of Metal Oxides In Pure Fused Na 2SO 4 Fused...from experimental errors. 3. Solubility of CeO 2 in Fused Na2 So4-NaVO 3 Recently, the solubilities of CeO2 , HfO 2 and Y203 in fused Na2So4-30 mol

  3. Interface traps and dangling-bond defects in (100)Ge/HfO2

    Science.gov (United States)

    Afanas'ev, V. V.; Fedorenko, Y. G.; Stesmans, A.

    2005-07-01

    Combined electrical and electron spin resonance analysis reveals dramatic differences in the interface defect properties of the (100)Ge/GeOxNy/HfO2 and (100)Ge/GeO2 interfaces from the seemingly similar interfaces of (100)Si with the HfO2 and SiO2. No dangling bond centers associated with Ge crystal surface atoms are detected. Only paramagnetic defects in the near-interfacial Ge oxide or Ge (oxy)nitride layers are observed. In contrast to the amphoteric traps related to the dangling bonds (Pb-type centers) commonly observed at the silicon/insulator interfaces, the major component of the Ge/insulator interface trap spectrum comes from slow acceptor states which show no correlation with paramagnetic centers and are resistant to passivation by hydrogen.

  4. Environmental Barrier Coatings for Turbine Engines: A Design and Performance Perspective

    Science.gov (United States)

    Zhu, Dongming; Fox, Dennis S.; Ghosn, Louis; Smialek, James L.; Miller, Robert A.

    2009-01-01

    Ceramic thermal and environmental barrier coatings (TEBC) for SiC-based ceramics will play an increasingly important role in future gas turbine engines because of their ability to effectively protect the engine components and further raise engine temperatures. However, the coating long-term durability remains a major concern with the ever-increasing temperature, strength and stability requirements in engine high heat-flux combustion environments, especially for highly-loaded rotating turbine components. Advanced TEBC systems, including nano-composite based HfO2-aluminosilicate and rare earth silicate coatings are being developed and tested for higher temperature capable SiC/SiC ceramic matrix composite (CMC) turbine blade applications. This paper will emphasize coating composite and multilayer design approach and the resulting performance and durability in simulated engine high heat-flux, high stress and high pressure combustion environments. The advances in the environmental barrier coating development showed promise for future rotating CMC blade applications.

  5. Studying the mechanism of hybrid nanoparticle EUV photoresists

    KAUST Repository

    Zhang, Ben

    2015-03-23

    This work focuses on the investigation of dual tone patterning mechanism with hybrid inorganic/organic photoresists. Hafnium oxide (HfO2) modified with acrylic acid was prepared and the influence of electrolyte solutions as well as pH on its particle size change was investigated. The average particle size and zeta potential of the nanoparticles in different electrolyte solutions were measured. The results show that addition of different concentrations of electrolytes changed the hydrodynamic diameter of nanoparticles in water. Increased concentration of tetramethyl ammonium hydroxide (TMAH) caused the zeta potential of nanoparticles to change from positive to negative and its hydrodynamic diameter to increase from 40 nm to 165 nm. In addition, increasing concentration of triflic acid led to the decrease of particle size and zeta potential. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  6. ANTIREFLECTION MULTILAYER COATINGS WITH THIN METAL LAYERS

    Directory of Open Access Journals (Sweden)

    L. A. Gubanova

    2016-03-01

    Full Text Available The design of anti-reflective coatings for metal surfaces of Al, Ti, N,i Cr is proposed. The coatings have the form of alternating layers of dielectric/metal/dielectric with the number of cells up to15. The method of calculation of such coatings is proposed. We have calculated the coatings of the type [HfO2/Cr/HfO2]15, [ZrO2/Ti/Al2O3]15, [ZrO2/Cr/ZrO2]15. It is shown that the proposed interference coatings provide reduction of the residual reflectance of the metal several times (from 3.5 to 6.0 in a wide spectral range (300-1000 nm. The proposed coatings can be recommended as anti-reflective coatings for energy saving solar systems and batteries, and photovoltaic cells.

  7. Effect of reflection and refraction on NEXAFS spectra measured in TEY mode.

    Science.gov (United States)

    Filatova, Elena; Sokolov, Andrey

    2018-01-01

    The evolution of near-edge X-ray absorption fine structure in the vicinity of the K-absorption edge of oxygen for HfO 2 over a wide range of incidence angles is analyzed by simultaneous implementation of the total-electron-yield (TEY) method and X-ray reflection spectroscopy. It is established that the effect of refraction on the TEY spectrum is greater than that of reflection and extends into the angular region up to angles 2θ c . Within angles that are less than the critical angle, both the reflection and refraction strongly distort the shape of the TEY spectrum. Limitations of the technique for the calculation of optical constants from the reflection spectra using the Kramers-Kronig relation in the limited energy region in the vicinity of thresholds are discussed in detail.

  8. Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors

    Directory of Open Access Journals (Sweden)

    S. Maikap

    2011-01-01

    Full Text Available Physical and memory characteristics of the atomic-layer-deposited RuOx metal nanocrystal capacitors in an n-Si/SiO2/HfO2/RuOx/Al2O3/Pt structure with different postdeposition annealing temperatures from 850–1000°C have been investigated. The RuOx metal nanocrystals with an average diameter of 7 nm and a highdensity of 0.7 × 1012/cm2 are observed by high-resolution transmission electron microscopy after a postdeposition annealing temperature at 1000°C. The density of RuOx nanocrystal is decreased (slightly by increasing the annealing temperatures, due to agglomeration of multiple nanocrystals. The RuO3 nanocrystals and Hf-silicate layer at the SiO2/HfO2 interface are confirmed by X-ray photoelectron spectroscopy. For post-deposition annealing temperature of 1000°C, the memory capacitors with a small equivalent oxide thickness of ~9 nm possess a large hysteresis memory window of >5 V at a small sweeping gate voltage of ±5 V. A promising memory window under a small sweeping gate voltage of ~3 V is also observed due to charge trapping in the RuOx metal nanocrystals. The program/erase mechanism is modified Fowler-Nordheim (F-N tunneling of the electrons and holes from Si substrate. The electrons and holes are trapped in the RuOx nanocrystals. Excellent program/erase endurance of 106 cycles and a large memory window of 4.3 V with a small charge loss of ~23% at 85°C are observed after 10 years of data retention time, due to the deep-level traps in the RuOx nanocrystals. The memory structure is very promising for future nanoscale nonvolatile memory applications.

  9. InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

    KAUST Repository

    Alhashim, Hala H.

    2015-10-16

    We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175  nm (>148  meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ∼1060−1200  nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green–yellow–orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.

  10. Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layers.

    Science.gov (United States)

    Ting, Guy G; Acton, Orb; Ma, Hong; Ka, Jae Won; Jen, Alex K-Y

    2009-02-17

    High dielectric constant (k) metal oxides such as hafnium oxide (HfO2) have gained significant interest due to their applications in microelectronics. In order to study and control the surface properties of hafnium oxide, self-assembled monolayers (SAMs) of four different long aliphatic molecules with binding groups of phosphonic acid, carboxylic acid, and catechol were formed and characterized. Surface modification was performed to improve the interface between metal oxide and top deposited materials as well as to create suitable dielectric properties, that is, leakage current and capacitance densities, which are important in organic thin film transistors. Attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, contact angle goniometry, atomic force microscopy (AFM), and simple metal-HfO2-SAM-metal devices were used to characterize the surfaces before and after SAM modification on sol-gel processed hafnium oxide. The alkylphosphonic acid provided the best monolayer formation on sol-gel processed hafnium oxide to generate a well-packed, ultrathin dielectric exhibiting a low leakage current density of 2x10(-8) A/cm2 at an applied voltage of -2.0 V and high capacitance density of 0.55 microF/cm2 at 10 kHz. Dialkylcatechol showed similar characteristics and the potential for using the catechol SAMs to modify HfO2 surfaces. In addition, the integration of this alkylphosphonic acid SAM/hafnium oxide hybrid dielectric into pentacene-based thin film transistors yields low-voltage operation within 1.5 V and improved performance over bare hafnium oxide.

  11. Plasma arc cutting: Microstructural modifications of hafnium cathodes during first cycles

    International Nuclear Information System (INIS)

    Rotundo, F.; Martini, C.; Chiavari, C.; Ceschini, L.; Concetti, A.; Ghedini, E.; Colombo, V.; Dallavalle, S.

    2012-01-01

    In the present work, the microstructural modifications of the Hf insert in plasma arc cutting (PAC) electrodes operating at 250 A were experimentally investigated during first cycles, in order to understand those phenomena occurring on and under the Hf emissive surface and involved in the electrode erosion process. Standard electrodes were subjected to an increasing number of cutting cycles (CCs) on mild steel plates in realistic operative conditions, with oxygen/air as plasma/shield gas. Microstructural analysis was performed for each electrode at different erosion stages by means of scanning electron microscopy (SEM) equipped with energy dispersive spectroscopy (EDS) and Raman spectroscopy. Electrodes cross sections were also observed by means of optical microscopy (both in bright field and in reflected polarised light) after chemical etching. In the insert, three typical zones were found after cutting: monoclinic HfO 2 layer; thermally-modified transition zone with O 2 –Hf solid solution; unmodified Hf. The erosion cavity and the oxide layer thickness increase with the number of cutting cycles. Macrocracking was observed in the oxide layer, while microcracking and grain growth were detected in the remelted Hf. Moreover, detachment was found at the Hf/Cu interface. Based on thermodynamics and kinetics of the Hf high temperature oxidation, conclusions can be drawn on the erosion mechanism involved. - Highlights: ► Hf microstructural modifications in cathodes after plasma arc cutting cycles investigated. ► 3 zones identified after cutting: HfO 2 layer; remelted zone with O 2 –Hf solid solution; unmodified Hf. ► Hf-based ejections both in arc-on and arc-off phases; erosion cavity deepens with cutting cycles. ► Detachment at the Hf/Cu interfaces, worsening heat dissipation and oxidation/erosion phenomena. ► The use of a different current ramp at subsequent erosion stages is suggested.

  12. Oxygen vacancy chain and conductive filament formation in hafnia

    Science.gov (United States)

    Xue, Kan-Hao; Miao, Xiang-Shui

    2018-04-01

    The stability and aggregation mechanisms of oxygen vacancy chains are studied for hafnia using self-energy corrected density functional theory. While oxygen vacancies tend not to align along the c-axis of monoclinic HfO2, oxygen vacancy chains along a-axis and b-axis are energetically favorable, with cohesive energies of 0.05 eV and 0.03 eV per vacancy, respectively. Nevertheless, with an increase of the cross section area, intensive oxygen vacancy chains become much more stable in hafnia, which yields phase separation into Hf-clusters and HfO2. Compared with disperse single vacancy chains, intensive oxygen vacancy chains made of 4, 6, and 8 single vacancy chains are energetically more favorable by 0.17, 0.20, and 0.30 eV per oxygen vacancy, respectively. On the other hand, while a single oxygen vacancy chain exhibits a tiny electronic energy gap of around 0.5 eV, metallic conduction emerges for the intensive vacancy chain made of 8 single vacancy chains, which possesses a filament cross section area of ˜0.4 nm2. This sets a lower area limit for Hf-cluster filaments from metallic conduction point of view, but in real hafnia resistive RAM devices the cross section area of the filaments can generally be much larger (>5 nm2) for the sake of energy minimization. Our work sets up a bridge between oxygen vacancy ordering and phase separation in hafnia, and shows a clear trend of filament stabilization with larger dimensions. The results could explain the threshold switching phenomenon in hafnia when a small AFM tip was used as the top electrode, as well as the undesired multimode operation in resistive RAM cells with 3 nm-thick hafnia.

  13. Impact of nitrogen plasma passivation on the Al/n-Ge contact

    International Nuclear Information System (INIS)

    Lai, Shumei; Mao, Danfeng; Ruan, Yujiao; Xu, Yihong; Huang, Zhiwei; Huang, Wei; Chen, Songyan; Li, Cheng; Wang, Jianyuan; Tang, Dingliang

    2016-01-01

    Highlights: • A thin GeO x N y layer was formed by N 2 plasma. • The principal parameters of N 2 plasma treatment and additional post anneal have a great impact on the Al/n-Ge contact. • A model was proposed to explain the variation of Schottky barrier height. • The GeO x N y layer was also benefit to achieve a low leakage current density for HfO 2 /Ge MOS capacitors. - Abstract: Severe Fermi level pinning at the interface of metal/n-Ge leads to the formation of a Schottky barrier. Therefore, a high contact resistance is introduced, debasing the performance of Ge devices. In this study, a Ge surface was treated by nitrogen plasma to form an ultra-thin Germanium oxynitride (GeO x N y ) passivation layer. It was found that the Schottky barrier height (SBH) of metal/n-Ge contact was strongly modulated by the GeO x N y interlayer, indicating alleviation of Fermi-level pinning effect. By adjusting the principal parameters of N 2 plasma treatment and additional post anneal, a Quasi-ohmic Al/n-Ge contact was achieved. Furthermore, the introduced GeO x N y layer gave extremely lower leakage current density of the gate stack for HfO 2 /Ge devices. These results demonstrate that GeO x N y formed by N 2 plasma would be greatly beneficial to the fabrication of the Ge-based devices.

  14. Interaction mechanism between niobium-silicide-based alloy melt and Y2O3 refractory crucible in vacuum induction melting process

    Directory of Open Access Journals (Sweden)

    Gao Ming

    2011-05-01

    Full Text Available The Y2O3 crucibles were introduced in the study as an alternative to the traditional ceramic ones in vacuum induction melting of multi-component Nb-16Si-22Ti-2Al-2Hf-17Cr (at.% alloys, to reveal the possible interactions between the alloy melt and the refractory crucible. Multiple melting time lengths and two cooling schemes were designed and used for the experiments. The chemical composition and microstructure of the tested alloy and the melt-crucible interaction were investigated and evaluated. In the experiments, Y2O3 crucible displays good physical-chemical compatibility. The results indicate that the increment of O element in the as-cast ingot is 0.03at.%-0.04at.% (72-97 ppm and the increment of Y element is very insignificant. The key features of the alloy melt interacting with Y2O3 ceramics are analyzed and concluded in the paper. As a result of the dissolution reaction xY2O3 (in molten alloy + (1-xHfO2 (impurity →Hf1-xY2xO2-x, a continuous double-layer solid film consisted of HfO2 solid solution (~2 μm and pure HfO2 (~5 μm is formed on the surface of the test ingot after cooled down in the crucible. The experimental results show that the Y2O3 crucible is applicable to the vacuum induction melting of Nb-Si based alloys.

  15. EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

    Science.gov (United States)

    Demming, Anna

    2012-09-01

    ] Joung D, Chunder A, Zhai L and Khondaker S I 2010 High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis Nanotechnology 21 165202 [9] Bryllert T, Wernersson L-E, L¨owgren T and Samuelson L 2006 Vertical wrap-gated nanowire transistors Nanotechnology 17 S227-30 [10] Schulze A et al 2011 Observation of diameter dependent carrier distribution in nanowire-based transistors Nanotechnology 22 185701 [11] Moriyama N, Ohno Y, Kitamura T, Kishimoto S and Mizutani T 2010 Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges Nanotechnology 21 165201 [12] Bartolomeo A D, Rinzan M, Boyd A K, Yang Y, Guadagno L, Giubileo F and Barbara P 2010 Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes Nanotechnology 21 115204 [13] Liao L et al 2009 Multifunctional CuO nanowire devices: P-type field effect transistors and CO gas sensors Nanotechnology 20 085203

  16. Methodology for Producing a Uniform Distribution of UO2 in a Tungsten Matrix

    Science.gov (United States)

    Tucker, Dennis S.; O'Conner, Andrew; Hickman, Rickman; Broadway, Jeramie; Belancik, Grace

    2015-01-01

    Current work at NASA's Marshall Space Flight Center (MSFC) is focused on the development CERMET fuel materials for Nuclear Thermal Propulsion (NTP). The CERMETs consist of uranium dioxide (UO2) fuel particles embedded in a tungsten (W) metal matrix. Initial testing of W-UO2 samples fabricated from fine angular powders performed reasonably well, but suffered from significant fuel loss during repeated thermal cycling due to agglomeration of the UO2 (1). The blended powder mixtures resulted in a non-uniform dispersion of the UO2 particles in the tungsten matrix, which allows rapid vaporization of the interconnected UO2 from the sample edges into the bulk material. Also, the angular powders create areas of stress concentrations due to thermal expansion mismatch, which eventually cracks the tungsten matrix. Evenly coating spherical UO2 particles with chemical vapor deposited (CVD) tungsten prior to consolidation was previously demonstrated to provide improved performance. However, the CVD processing technology is expensive and not currently available. In order to reduce cost and enhance performance, a powder coating process has been developed at MSFC to produce a uniform distribution of the spherical UO2 particles in a tungsten matrix. The method involves utilization of a polyethylene binder during mixing which leads to fine tungsten powders clinging to the larger UO2 spherical particles. This process was developed using HfO2 as a surrogate for UO2. Enough powder was mixed to make 8 discs (2cm diameter x 8mm thickness) using spark plasma sintering. A uniaxial pressure of 50 MPa was used at four different temperatures (2 samples at each temperature). The first two samples were heated to 1400C and 1500C respectively for 5 minutes. Densities for these samples were less than 85% of theoretical, so the time at temperature was increased to 20 minutes for the remaining samples. The highest densities were achieved for the two samples sintered at 1700C (approx. 92% of theoretical). Scanning electron microscopy (SEM) of the mixed powders and the sintered samples along with energy dispersive x-ray analysis was obtained. The SEM of the powders clearly show the fine W powder adhered to the larger HfO2 particles and a uniform distribution of HfO2 particles in a tungsten matrix upon densification. Vicker's Microhardness testing was also performed on all samples using 0.5, 1.0 and 2.0 kg loads. Five indents were made at each load level. All indents were placed in the tungsten matrix to assist as a proxy in measuring densification. The highest hardness value was obtained for the 1700C specimens. The hardness average for these samples was 312.14 MPa. This powder processing method has been applied to W/UO2 powders with the SEM of the powders appearing similar to the W/HfO2 powder images.

  17. High-Z Nanoparticle/Polymer Nanocomposites for Gamma-Ray Scintillation Detectors

    Science.gov (United States)

    Liu, Chao

    An affordable and reliable solution for spectroscopic gamma-ray detection has long been sought after due to the needs from research, defense, and medical applications. Scintillators resolve gamma energy by proportionally converting a single high-energy photon into a number of photomultiplier-tube-detectable low-energy photons, which is considered a more affordable solution for general purposes compared to the delicate semiconductor detectors. An ideal scintillator should simultaneously exhibit the following characteristics: 1) high atomic number (Z) for high gamma stopping power and photoelectron production; 2) high light yield since the energy resolution is inversely proportional to the square root of light yield; 3) short emission decay lifetime; and 4) low cost and scalable production. However, commercial scintillators made from either inorganic single crystals or plastics fail to satisfy all requirements due to their intrinsic material properties and fabrication limitations. The concept of adding high-Z constituents into plastic scintillators to harness high Z, low cost, and fast emission in the resulting nanocomposite scintillators is not new in and of itself. Attempts have been made by adding organometallics, quantum dots, and scintillation nanocrystals into the plastic matrix. High-Z organometallics have long been used to improve the Z of plastic scintillators; however, their strong spin-orbit coupling effect entails careful triplet energy matching using expensive triplet emitters to avoid severe quenching of the light yield. On the other hand, reported quantum dot- and nanocrystal-polymer nanocomposites suffer from moderate Z and high optical loss due to aggregation and self-absorption at loadings higher than 10 wt%, limiting their potential for practical application. This dissertation strives to improve the performance of nanoparticle-based nanocomposite scintillators. One focus is to synthesize transparent nanocomposites with higher loadings of high-Z inorganic nanoparticles. A facile single-precursor method is first developed to synthesize HfO2 nanoparticles, the highest-Z simple oxide with band gap larger than polyvinyltoluene, with uniform size distribution around 5 nm. A nanoparticle-surface-modification protocol is then developed for the fabrication of transparent nanocomposite monoliths with high nanoparticle loadings (up to 40 wt%). Using this method, transparent HfO2-loaded blue-emitting nanocomposite scintillators (2 mm thick, transmittance at 550 nm >75%) have been fabricated capable of producing a full energy photopeak for 662 keV gamma rays, with the best deconvoluted photopeak energy resolution scintillators. Although the HfO2 work represents a great improvement over previous reports, it is also found in this system that the light yield deteriorates at higher nanoparticle loadings. This is attributed to the trapping of fast electron energy deposited in the non-emitting nanoparticles. To overcome this deterioration issue, a revisit to the previously proposed quantum-dot-loaded nanocomposite scintillator is made with significant improvements. Transparent, ultra-high-loading (up to 60 wt%) CdxZn1-xS/ZnS core/shell quantum dot/polymer nanocomposite monoliths are first synthesized by in situ copolymerization of the partially mathacrylate-functionalized quantum dots in a monomer solution. With efficient Forster resonance energy transfer from the high-atomic-number quantum dots to lower-band-gap organic dyes, quantum-dot-borne excitons are extracted for photon production. The resulting nanocomposites thus exhibit unprecedented simultaneous enhancements in both light yield (visible photons produced per MeV of gamma photon energy) and gamma attenuation power. In a best demonstration, a 60 wt% quantum-dot nanocomposite scintillator exhibits a light yield of 9255 photons/MeV and a photopeak resolution of 9.8% under 662 keV Cs-137 gamma irradiation, demonstrating the potential of this model system for future high-performance low-cost spectroscopic gamma detectors.

  18. Glass–water interaction: Effect of high-valence cations on glass structure and chemical durability

    Energy Technology Data Exchange (ETDEWEB)

    Hopf, J.; Kerisit, Sebastien N.; Angeli, F.; Charpentier, Thibault M.; Icenhower, Jonathan P.; McGrail, Bernard P.; Windisch, Charles F.; Burton, Sarah D.; Pierce, Eric M.

    2016-05-15

    Borosilicate glass is a durable solid, but it dissolves when in contact with aqueous fluids. The dissolution mechanism, which involves a variety of sequential reactions that occur at the solid-fluid interface, has important implications for the corrosion resistance of industrial and nuclear waste glasses. In this study, spectroscopic measurements, dissolution experiments, and Monte Carlo simulations were performed to investigate the effect of high–valence cations (HVC) on the mechanisms of glass dissolution under dilute and near-saturated conditions. Raman and NMR spectroscopy were used to determine the structural changes that occur in glass, specifically network formers (e.g., Al, Si, and B), with the addition of the HVC element hafnium in the Na2O–Al2O3–B2O3–HfO2–SiO2 system (e.g., Na/[Al+B] = 1.0 and HfO2/SiO2 from 0.0 to 0.42). Spectroscopic measurements revealed that increasing hafnium content decreases N4 (tetrahedral boron/total boron) and increases the amount of Si—O—Hf moieties in the glass. Results from flow–through experiments conducted under dilute and near–saturated conditions show a decrease of approximately 100× or more in the dissolution rate over the series from 0 to 20 mol% HfO2. Comparing the average steady-state rates obtained under dilute conditions to the rates obtained for near-saturated conditions reveals a divergence in the magnitude between the average steady state rates measured in these different conditions. The reason for this divergence was investigated more thoroughly using Monte Carlo simulations. Simulations indicate that the divergence in glass dissolution behavior under dilute and near-saturated conditions result from the stronger binding of Si sites that deposit on the surface from the influent when Hf is present in the glass. As a result, the residence time at the glass surface of these newly-formed Si sites is longer in the presence of Hf, which increases the density of anchor sites from which altered layers with higher Si densities can form. These results illustrate the importance of understanding solid–water/solid-fluid interactions by linking macroscopic reaction kinetics to nanometer scale interfacial processes.

  19. Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

    Science.gov (United States)

    Zhu, Y.; Clavel, M.; Goley, P.; Hudait, M. K.

    2014-10-01

    Mixed-anion, GaAs1-ySby metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs1-ySby materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs1-ySby. Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sb compositions in the GaAs1-ySby structures. Selected high-κ dielectric materials, Al2O3, HfO2, and Ta2O5 were deposited using atomic layer deposition on the GaAs0.38Sb0.62 material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band offset of >2 eV for all three dielectric materials on GaAs0.38Sb0.62, indicating the potential of utilizing these dielectrics on GaAs0.38Sb0.62 for p-type metal-oxide-semiconductor (MOS) applications. Moreover, both Al2O3 and HfO2 showed a conduction band offset of >2 eV on GaAs0.38Sb0.62, suggesting these two dielectrics can also be used for n-type MOS applications. The well-controlled Sb composition in several GaAs1-ySby material systems and the detailed band alignment analysis of multiple high-κ dielectric materials on a fixed Sb composition, GaAs0.38Sb0.62, provides a pathway to utilize GaAs1-ySby materials in future microelectronic and optoelectronic applications.

  20. Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

    Directory of Open Access Journals (Sweden)

    Tao Li

    2015-05-01

    Full Text Available The electrical performance of MoS2 can be engineered by introducing high-κ dielectrics, while the interactions between high-κ dielectrics and MoS2 need to be studied. In this study, multilayer MoS2 field-effect transistors (FETs with a back-gated configuration were fabricated on high-κ Al2O3 coated Si substrates. Compared with MoS2 FETs on SiO2, the field-effect mobility (μFE and subthreshold swing (SS were remarkably improved in MoS2/Al2O3/Si. The improved μFE was thought to result from the dielectric screening effect from high-κ Al2O3. When a HfO2 passivation layer was introduced on the top of MoS2/Al2O3/Si, the field-effect mobility was further enhanced, which was thought to be concerned with the decreased contact resistance between the metal and MoS2. Meanwhile, the interface trap density increased from 2.4×1012 eV−1cm−2 to 6.3×1012 eV−1cm−2. The increase of the off-state current and the negative shift of the threshold voltage may be related to the increase of interface traps.

  1. Strain and deformations engineered germanene bilayer double gate-field effect transistor by first principles

    Science.gov (United States)

    Meher Abhinav, E.; Chandrasekaran, Gopalakrishnan; Kasmir Raja, S. V.

    2017-10-01

    Germanene, silicene, stanene, phosphorene and graphene are some of single atomic materials with novel properties. In this paper, we explored bilayer germanene-based Double Gate-Field Effect Transistor (DG-FET) with various strains and deformations using Density Functional Theory (DFT) and Green's approach by first-principle calculations. The DG-FET of 1.6 nm width, 6 nm channel length (Lch) and HfO2 as gate dielectric has been modeled. For intrinsic deformation of germanene bilayer, we have enforced minute mechanical deformation of wrap and twist (5°) and ripple (0.5 Å) on germanene bilayer channel material. By using NEGF formalism, I-V Characteristics of various strains and deformation tailored DG-FET was calculated. Our results show that rough edge and single vacancy (5-9) in bilayer germanene diminishes the current around 47% and 58% respectively as compared with pristine bilayer germanene. In case of strain tailored bilayer DG-FET, multiple NDR regions were observed which can be utilized in building stable multiple logic states in digital circuits and high frequency oscillators using negative resistive techniques.

  2. An overview of Experimental Condensed Matter Physics in Argentina by 2014, and Oxides for Non Volatile Memory Devices: The MeMOSat Project

    Science.gov (United States)

    Levy, Pablo

    2015-03-01

    In the first part of my talk, I will describe the status of the experimental research in Condensed Matter Physics in Argentina, biased towards developments related to micro and nanotechnology. In the second part, I will describe the MeMOSat Project, a consortium aimed at producing non-volatile memory devices to work in aggressive environments, like those found in the aerospace and nuclear industries. Our devices rely on the Resistive Switching mechanism, which produces a permanent but reversible change in the electrical resistance across a metal-insulator-metal structure by means of a pulsed protocol of electrical stimuli. Our project is devoted to the study of Memory Mechanisms in Oxides (MeMO) in order to establish a technological platform that tests the Resistive RAM (ReRAM) technology for aerospace applications. A review of MeMOSat's activities is presented, covering the initial Proof of Concept in ceramic millimeter sized samples; the study of different oxide-metal couples including (LaPr)2/3Ca1/3MnO, La2/3Ca1/3MnO3, YBa2Cu3O7, TiO2, HfO2, MgO and CuO; and recent miniaturized arrays of micrometer sized devices controlled by in-house designed electronics, which were launched with the BugSat01 satellite in June2014 by the argentinian company Satellogic.

  3. The effect of reactive ion etch (RIE) process conditions on ReRAM device performance

    Science.gov (United States)

    Beckmann, K.; Holt, J.; Olin-Ammentorp, W.; Alamgir, Z.; Van Nostrand, J.; Cady, N. C.

    2017-09-01

    The recent surge of research on resistive random access memory (ReRAM) devices has resulted in a wealth of different materials and fabrication approaches. In this work, we describe the performance implications of utilizing a reactive ion etch (RIE) based process to fabricate HfO2 based ReRAM devices, versus a more unconventional shadow mask fabrication approach. The work is the result of an effort to increase device yield and reduce individual device size. Our results show that choice of RIE etch gas (SF6 versus CF4) is critical for defining the post-etch device profile (cross-section), and for tuning the removal of metal layers used as bottom electrodes in the ReRAM device stack. We have shown that etch conditions leading to a tapered profile for the device stack cause poor electrical performance, likely due to metal re-deposition during etching, and damage to the switching layer. These devices exhibit nonlinear I-V during the low resistive state, but this could be improved to linear behavior once a near-vertical etch profile was achieved. Device stacks with vertical etch profiles also showed an increase in forming voltage, reduced switching variability and increased endurance.

  4. High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers

    Directory of Open Access Journals (Sweden)

    Hong Gu

    Full Text Available We investigated the thermal properties of few-layer Mo0.5W0.5S2 using a series of samples with different kinds of capping layers. Temperature-dependent Raman measurements were conducted in the range of 300–500 K, with power-dependent measurements also carried out. It indicated, for the few-layer Mo0.5W0.5S2, the temperature coefficients of the WS2-like E12g mode, MoS2-like E12g mode and A1g mode were −0.0155 cm−1/K, −0.0146 cm−1/K, and −0.0130 cm−1/K, respectively. And the thermal conductivity was estimated to be 44.8 W/mK. Moreover, the Mo0.5W0.5S2 samples coated with capping layers (ZrO2, HfO2 both showed a better thermal stability and a larger thermal conductivity than the one without. The results revealed that the capping layer should be an important factor in the thermal property. Keywords: Mo0.5W0.5S2, TMDs, Thermal properties, High temperature, Capping layers, Raman

  5. Wavelength-selective thermal emitters using Si-rods on MgO

    Science.gov (United States)

    Suemitsu, Masahiro; Asano, Takashi; De Zoysa, Menaka; Noda, Susumu

    2018-01-01

    Supporting substrates for Si rod-type photonic crystals (PCs) are investigated for realizing highly wavelength-selective near-infrared thermal emitters. Three materials—SiO2, Al2O3, and MgO—are considered for their low infrared emission (transparency) and remarkable heat resistance. Theoretical calculations of the emissivity spectra of Si-rod PCs (rod height = 500 nm, rod diameter = 300 nm, and lattice constant = 600 nm) on 50 μm-thick supporting substrates at 1400 K indicate that the long-wavelength (>3 μm) emission power from the emitter using MgO is less than 1/10 of that of the other two materials. Fabrication of the Si-rod PCs on the 50 μm-thick MgO substrate requires the insertion of a thin (30 nm) HfO2 film between MgO and Si to improve the stability at high temperatures (>1400 K). Experimental results of the fabricated structure show that at 1400 K, the ratio of emissive power at wavelengths <1.8 μm to the total emissive power is 34% and that this can be increased to over 53% in an optimized rod-array structure with a 10 μm-thick MgO substrate.

  6. Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

    Science.gov (United States)

    Lucero, Antonio T.; Byun, Young-Chul; Qin, Xiaoye; Cheng, Lanxia; Kim, Hyoungsub; Wallace, Robert M.; Kim, Jiyoung

    2016-08-01

    Atomic layer deposition is used to convert an (NH4)2S cleaned p-In0.53Ga0.47As with diethylzinc (DEZ) and water, resulting in the formation of a ZnO/ZnS interfacial passivation layer (IPL). The process is studied using in-situ X-ray photoelectron spectroscopy. DEZ reacts with sulfur and oxygen present on the surface, chemically reducing arsenic 3+ and gallium 3+ to lower oxidation states. The sulfur concentration remains constant during the deposition process while the oxygen concentration on the surface remains small, confirming that the IPL is composed of both ZnO and ZnS. Measurements of metal-oxide-semiconductor capacitors with HfO2 for the dielectric show that the ZnO/ZnS IPL can nearly eliminate frequency dispersion (<1% per frequency decade) in accumulation and results in small hysteresis (<60 mV) with a D it in the 1011 eV-1 cm-2 range in the midgap. Frequency dispersion is observed in the depletion region and is attributed to minority carrier generation from the ZnO present in the IPL.

  7. Origin and control of high-temperature ferromagnetism in semiconductors

    Science.gov (United States)

    Kuroda, Shinji; Nishizawa, Nozomi; Takita, Kôki; Mitome, Masanori; Bando, Yoshio; Osuch, Krzysztof; Dietl, Tomasz

    2007-06-01

    The extensive experimental and computational search for multifunctional materials has resulted in the development of semiconductor and oxide systems, such as (Ga,Mn)N, (Zn,Cr)Te and HfO2, which exhibit surprisingly stable ferromagnetic signatures despite having a small or nominally zero concentration of magnetic elements. Here, we show that the ferromagnetism of (Zn,Cr)Te, and the associated magnetooptical and magnetotransport functionalities, are dominated by the formation of Cr-rich (Zn,Cr)Te metallic nanocrystals embedded in the Cr-poor (Zn,Cr)Te matrix. Importantly, the formation of these nanocrystals can be controlled by manipulating the charge state of the Cr ions during the epitaxy. The findings provide insight into the origin of ferromagnetism in a broad range of semiconductors and oxides, and indicate possible functionalities of these composite systems. Furthermore, they demonstrate a bottom-up method for self-organized nanostructure fabrication that is applicable to any system in which the charge state of a constituent depends on the Fermi-level position in the host semiconductor.

  8. Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO₂/ITO/Cu stack for CMOS backend integration.

    Science.gov (United States)

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2014-07-28

    An ultra-compact electro-absorption (EA) modulator operating around 1.55-μm telecom wavelengths is proposed and theoretically investigated. The modulator is comprised of a stack of TiN/HfO2modulator inserted in the 400-nm × 340-nm-Si stripe waveguide exhibits insertion loss of 2.9 (3.2) dB and modulation depth of 19.9 (15.2) dB for the TE (TM) mode. The modulation speed is ~11 GHz, limited by the RC delay, and the energy consumption is ~0.4 pJ/bit. The stack can also be deposited on a low-index-contrast waveguide such as Si3N4. For example, a 4-μm-long EA modulator inserted in an 800-nm × 600-nm-Si3N4 stripe waveguide exhibits insertion loss of 6.3 (3.5) dB and modulation depth of 16.5 (15.8) dB for the TE (TM) mode. The influences of the ITO, TiN, HfO2 layers and the beneath dielectric core, as well as the processing tolerance, on the performance of the proposed EA modulator are systematically investigated.

  9. Properties of Mechanically Alloyed W-Ti Materials with Dual Phase Particle Dispersion

    Directory of Open Access Journals (Sweden)

    František Lukáč

    2016-12-01

    Full Text Available W alloys are currently widely studied materials for their potential application in future fusion reactors. In the presented study, we report on the preparation and properties of mechanically alloyed W-Ti powders compacted by pulsed electric current sintering. Four different powder compositions of W-(3%–7%Ti with Hf or HfC were prepared. The alloys’ structure contains only high-melting-point phases, namely the W-Ti matrix, complex carbide (Ti,W,HfC and HfO2 particle dispersion; Ti in the form of a separate phase is not present. The bending strength of the alloys depends on the amount of Ti added. The addition of 3 wt. % Ti led to an increase whereas 7 wt. % Ti led to a major decrease in strength when compared to unalloyed tungsten sintered at similar conditions. The addition of Ti significantly lowered the room-temperature thermal conductivity of all prepared materials. However, unlike pure tungsten, the conductivity of the prepared alloys increased with the temperature. Thus, the thermal conductivity of the alloys at 1300 °C approached the value of the unalloyed tungsten.

  10. Long-range pulselength scaling of 351nm laser damage thresholds

    Science.gov (United States)

    Foltyn, S. R.; Jolin, L. J.

    1986-12-01

    In a series of experiments incorporating 351nm pulselength of 9, 26, 54, and 625ns, it was found that laser damage thresholds increased as (pulselength)/sup x/, and that the exponent averaged 0.36 and ranged, for different samples, from 0.23 to 0.48. Similar results were obtained when only catastrophic damage was considered. Samples included Al2O3/SiO2 in both AR and HR multilayers, HR's of Sc2O3/SiO2 and HfO2/SiO2, and Al-on-pyrex mirror; 9ns thresholds were between 0.2 to 5.6 J/sq cm. When these data were compared with a wide range of other results - for wavelengths from 0.25 to 10.6 microns and pulselengths down to 4ps - a remarkably consistent picture emerged. Damage thresholds, on average, increase approximately as the cube-root of pulselength from picoseconds to nearly a microsecond, and do so regardless of wavelength or material under test.

  11. Surface Characterization, Corrosion Resistance and in Vitro Biocompatibility of a New Ti-Hf-Mo-Sn Alloy

    Science.gov (United States)

    Ion, Raluca; Drob, Silviu Iulian; Ijaz, Muhammad Farzik; Vasilescu, Cora; Osiceanu, Petre; Gordin, Doina-Margareta; Cimpean, Anisoara; Gloriant, Thierry

    2016-01-01

    A new superelastic Ti-23Hf-3Mo-4Sn biomedical alloy displaying a particularly large recovery strain was synthesized and characterized in this study. Its native passive film is very thick (18 nm) and contains very protective TiO2, Ti2O3, HfO2, MoO2, and SnO2 oxides (XPS analysis). This alloy revealed nobler electrochemical behavior, more favorable values of the corrosion parameters and open circuit potentials in simulated body fluid in comparison with commercially pure titanium (CP-Ti) and Ti-6Al-4V alloy taken as reference biomaterials in this study. This is due to the favorable influence of the alloying elements Hf, Sn, Mo, which enhance the protective properties of the native passive film on alloy surface. Impedance spectra showed a passive film with two layers, an inner, capacitive, barrier, dense layer and an outer, less insulating, porous layer that confer both high corrosion resistance and bioactivity to the alloy. In vitro tests were carried out in order to evaluate the response of Human Umbilical Vein Endothelial Cells (HUVECs) to Ti-23Hf-3Mo-4Sn alloy in terms of cell viability, cell proliferation, phenotypic marker expression and nitric oxide release. The results indicate a similar level of cytocompatibility with HUVEC cells cultured on Ti-23Hf-3Mo-4Sn substrate and those cultured on the conventional CP-Ti and Ti-6Al-4V metallic materials. PMID:28773939

  12. Modification of SnO2 Anodes by Atomic Layer Deposition for High Performance Lithium Ion Batteries

    KAUST Repository

    Yesibolati, Nulati

    2013-05-01

    Tin dioxide (SnO2) is considered one of the most promising anode materials for Lithium ion batteries (LIBs), due to its large theoretical capacity and natural abundance. However, its low electronic/ionic conductivities, large volume change during lithiation/delithiation and agglomeration prevent it from further commercial applications. In this thesis, we investigate modified SnO2 as a high energy density anode material for LIBs. Specifically two approaches are presented to improve battery performances. Firstly, SnO2 electrochemical performances were improved by surface modification using Atomic Layer Deposition (ALD). Ultrathin Al2O3 or HfO2 were coated on SnO2 electrodes. It was found that electrochemical performances had been enhanced after ALD deposition. In a second approach, we implemented a layer-by-layer (LBL) assembled graphene/carbon-coated hollow SnO2 spheres as anode material for LIBs. Our results indicated that the LBL assembled electrodes had high reversible lithium storage capacities even at high current densities. These superior electrochemical performances are attributed to the enhanced electronic conductivity and effective lithium diffusion, because of the interconnected graphene/carbon networks among nanoparticles of the hollow SnO2 spheres.

  13. Thermal resistances of crystalline and amorphous few-layer oxide thin films

    Directory of Open Access Journals (Sweden)

    Liang Chen

    2017-11-01

    Full Text Available Thermal insulation at nanoscale is of crucial importance for non-volatile memory devices such as phase change memory and memristors. We perform non-equilibrium molecular dynamics simulations to study the effects of interface materials and structures on thermal transport across the few-layer dielectric nanostructures. The thermal resistance across few-layer nanostructures and thermal boundary resistance at interfaces consisting of SiO2/HfO2, SiO2/ZrO2 or SiO2/Al2O3 are obtained for both the crystalline and amorphous structures. Based on the comparison temperature profiles and phonon density of states, we show that the thermal boundary resistances are much larger in crystalline few-layer oxides than the amorphous ones due to the mismatch of phonon density of state between distinct oxide layers. Compared with the bulk SiO2, the increase of thermal resistance across crystalline few-layer oxides results from the thermal boundary resistance while the increase of thermal resistance across amorphous few-layer oxides is attributed to the lower thermal conductivity of the amorphous thin films.

  14. X-Ray Photoemission Study of the Oxidation of Hafnium

    International Nuclear Information System (INIS)

    Chourasia, R.; Hickman, J.L.; Miller, R.L.; Nixon, G.A.; Seabolt, M.A.

    2011-01-01

    About 20 angstrom of hafnium were deposited on silicon substrates using the electron beam evaporation technique. Two types of samples were investigated. In one type, the substrate was kept at the ambient temperature. After the deposition, the substrate temperature was increased to 100, 200, and 300 degree C. In the other type, the substrate temperature was held fixed at some value during the deposition. For this type, the substrate temperatures used were 100, 200, 300, 400, 500, 550, and 600 degree C. The samples were characterized in situ by the technique of X-ray photoelectron spectroscopy. No trace of elemental hafnium is observed in the deposited overlayer. Also, there is no evidence of any chemical reactivity between the overlayer and the silicon substrate over the temperature range used. The hafnium overlayer shows a mixture of the dioxide and the suboxide. The ratio of the suboxide to dioxide is observed to be more in the first type of samples. The spectral data indicate that hafnium has a strong affinity for oxygen. The overlayer gets completely oxidized to form HfO 2 at substrate temperature around 300 degree C for the first type of samples and at substrate temperature greater than 550 degree C for the second type

  15. Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices

    Science.gov (United States)

    Zeevi, Gilad; Katsman, Alexander; Yaish, Yuval E.

    2018-02-01

    In the present work, we study the initial SET mechanism of resistive switching (RS) in Pt/HfO2/Ti devices under a static electrical stress and the RS mechanism under a bias sweeping mode with rates of 100 mV/s-300 mV/s. We characterize the thin HfO2 dielectric layer by x-ray photoelectron spectroscopy and x-ray diffraction. These findings show that the layer structure is stoichiometric and nanocrystalline with a crystal diameter of ˜ 14 Å. We measure the temporal dependence of the conductive filament growth at different temperatures and for various biases. Furthermore, these devices present stable bipolar resistive switching with a high-to-low resistive state (HRS/LRS) ratio of more than three orders of magnitude. Activation energy E RS ≈ 0.56 eV and drift current parameter V 0 ≈ 0.07 V were determined from the temporal dependence of the initial `SET' process, first HRS to LRS transition [for static electrical stress of V DS = (4.7-5.0 V)]. We analyze the results according to our model suggesting generation of double-charge oxygen vacancies at the anode and their diffusion across the dielectric layer. The double-charge vacancies transform to a single charge and then to neutral vacancies by capturing hot electrons, and form a conductive filament as soon as a critical neutral-vacancy cluster is formed across the dielectric layer.

  16. Electrical properties of Al2O3-HfTiO laminate gate dielectric stacks with an equivalent oxide thickness below 0.8 nm

    International Nuclear Information System (INIS)

    Mikhelashvili, V.; Eisenstein, G.

    2007-01-01

    We report high quality nanolaminate films consisting of five Al 2 O 3 -HfTiO layers with a dielectric constant of about 29. The dielectric stack was deposited on unheated p-Si substrate from Al 2 O 3 and 1HfO 2 /1TiO 2 targets using an electron beam gun evaporation system without addition of oxygen. A dielectric constant for a thick HfTiO film of about 83 was also demonstrated. The electrical characteristics of as deposited structures and ones which were annealed for 5-10 min in an O 2 atmosphere at up to 950 deg. C were investigated. Two types of gate electrodes: Pt and Ti were compared. The dielectric stack which was annealed up to 500 deg. C exhibits a leakage current density as small as ∼ 1 x 10 -4 A/cm 2 at an electric of field 1.5 MV/cm for a quantum mechanical corrected equivalent oxide thickness of ∼ 0.76 nm. These values change to ∼ 1 x 10 -8 A/cm 2 and 1.82 nm respectively, after annealing at 950 deg. C for 5 min

  17. X-ray absorption in pillar shaped transmission electron microscopy specimens.

    Science.gov (United States)

    Bender, H; Seidel, F; Favia, P; Richard, O; Vandervorst, W

    2017-06-01

    The dependence of the X-ray absorption on the position in a pillar shaped transmission electron microscopy specimen is modeled for X-ray analysis with single and multiple detector configurations and for different pillar orientations relative to the detectors. Universal curves, applicable to any pillar diameter, are derived for the relative intensities between weak and medium or strongly absorbed X-ray emission. For the configuration as used in 360° X-ray tomography, the absorption correction for weak and medium absorbed X-rays is shown to be nearly constant along the pillar diameter. Absorption effects in pillars are about a factor 3 less important than in planar specimens with thickness equal to the pillar diameter. A practical approach for the absorption correction in pillar shaped samples is proposed and its limitations discussed. The modeled absorption dependences are verified experimentally for pillars with HfO 2 and SiGe stacks. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Ni ion release, osteoblast-material interactions, and hemocompatibility of hafnium-implanted NiTi alloy.

    Science.gov (United States)

    Zhao, Tingting; Li, Yan; Zhao, Xinqing; Chen, Hong; Zhang, Tao

    2012-04-01

    Hafnium ion implantation was applied to NiTi alloy to suppress Ni ion release and enhance osteoblast-material interactions and hemocompatibility. The auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscope results showed that a composite TiO(2)/HfO(2) nanofilm with increased surface roughness was formed on the surface of NiTi, and Ni concentration was reduced in the superficial surface layer. Potentiodynamic polarization tests displayed that 4 mA NiTi sample possessed the highest E(br) - E(corr), 470 mV higher than that of untreated NiTi, suggesting a significant improvement on pitting corrosion resistance. Inductively coupled plasma mass spectrometry tests during 60 days immersion demonstrated that Ni ion release rate was remarkably decreased, for example, a reduction of 67% in the first day. The water contact angle increased and surface energy decreased after Hf implantation. Cell culture and methyl-thiazol-tetrazolium indicated that Hf-implanted NiTi expressed enhanced osteoblasts adhesion and proliferation, especially after 7 days culture. Hf implantation decreased fibrinogen adsorption, but had almost no effect on albumin adsorption. Platelets adhesion and activation were suppressed significantly (97% for 4 mA NiTi) and hemolysis rate was decreased by at least 57% after Hf implantation. Modified surface composition and morphology and decreased surface energy should be responsible for the improvement of cytocompatibility and hemocompatibility. Copyright © 2011 Wiley Periodicals, Inc.

  19. Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X-ray Absorption and Photoelectron Spectroscopies.

    Science.gov (United States)

    Alivio, Theodore E G; De Jesus, Luis R; Dennis, Robert V; Jia, Ye; Jaye, Cherno; Fischer, Daniel A; Singisetti, Uttam; Banerjee, Sarbajit

    2015-07-27

    Interfacing graphene with metal oxides is of considerable technological importance for modulating carrier density through electrostatic gating as well as for the design of earth-abundant electrocatalysts. Herein, we probe the early stages of the atomic layer deposition (ALD) of HfO 2 on graphene oxide using a combination of C and O K-edge near-edge X-ray absorption fine structure spectroscopies and X-ray photoelectron spectroscopy. Dosing with water is observed to promote defunctionalization of graphene oxide as a result of the reaction between water and hydroxyl/epoxide species, which yields carbonyl groups that further react with migratory epoxide species to release CO 2 . The carboxylates formed by the reaction of carbonyl and epoxide species facilitate binding of Hf precursors to graphene oxide surfaces. The ALD process is accompanied by recovery of the π-conjugated framework of graphene. The delineation of binding modes provides a means to rationally assemble 2D heterostructures. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Amphoteric Aqueous Hafnium Cluster Chemistry.

    Science.gov (United States)

    Goberna-Ferrón, Sara; Park, Deok-Hie; Amador, Jenn M; Keszler, Douglas A; Nyman, May

    2016-05-17

    Selective dissolution of hafnium-peroxo-sulfate films in aqueous tetramethylammonium hydroxide enables extreme UV lithographic patterning of sub-10 nm HfO2 structures. Hafnium speciation under these basic conditions (pH>10), however, is unknown, as studies of hafnium aqueous chemistry have been limited to acid. Here, we report synthesis, crystal growth, and structural characterization of the first polynuclear hydroxo hafnium cluster isolated from base, [TMA]6 [Hf6 (μ-O2 )6 (μ-OH)6 (OH)12 ]⋅38 H2 O. The solution behavior of the cluster, including supramolecular assembly via hydrogen bonding is detailed via small-angle X-ray scattering (SAXS) and electrospray ionization mass spectrometry (ESI-MS). The study opens a new chapter in the aqueous chemistry of hafnium, exemplifying the concept of amphoteric clusters and informing a critical process in single-digit-nm lithography. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.