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Sample records for gd2o3-doped hfo2 high-k

  1. High temperature X-ray diffraction studies on HfO2-Gd2O3 system

    International Nuclear Information System (INIS)

    Panneerselvam, G.; Antony, M.P.; Ananthasivan, K.; Joseph, M.

    2016-01-01

    High temperature X-ray diffraction (HTXRD) technique is an important experimental tool for measuring thermal expansion of materials of interest. A series of solid solutions containing GdO 1.5 in HfO 2 ,Hf 1-y Gd y )O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out by using room temperature X-ray diffraction measurements. The room temperature lattice parameter estimated for (Hf 1-y Gd y )O 2 (y=0.15, 0.2, 0.3, 0.41 and 0.505) are 0.51714 nm, 0.51929 nm, 0.52359nm, 0.52789nm and 0.53241 nm, respectively. Thermal expansion coefficients and percentage linear thermal expansion of the HfO 2 -Gd 2 O 3 solid solutions containing 20 and 41 mol% GdO 1.5 were determined using HTXRD in the temperature range 298 to 1673K. The mean linear thermal expansion coefficients of the solid solutions containing 20 and 41 mol. %Gd are 11.65 x 10 -6 K -1 and 12.07 x 10 -6 K -1 , respectively. (author)

  2. Thermal expansion studies on HfO2-Gd2O3 system

    International Nuclear Information System (INIS)

    Panneerselvam, G.; Antony, M.P.; Nagarajan, K.

    2014-01-01

    A series of solid solutions containing GdO 1.5 in HfO 2 , (Hf 1-y Gd y ) O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out using room temperature X-ray diffraction measurements

  3. Solution growth of Tb doped Gd_2O_3 film

    International Nuclear Information System (INIS)

    Ghosh, M.; Pitale, S.; Desai, D.G.; Patra, G.D.; Sen, S.; Gadkari, S.C.

    2016-01-01

    Nanomaterials of Gd_2O_3 have proven applications in medical imaging and cancer therapy due to the presence of element Gd. Also Gd_2O_3 films have been grown by vapor phase method as well as self assembly in solution and studied as a high-k dielectric and efficient luminescence material. Here, we report a method to obtain Tb doped Gd_2O_3 film by solution growth method followed by suitable heat treatment. Uniform films of Tb doped Gadolinium hydroxycarbonate have been deposited on fused quartz substrates kept inside a solution containing gadolinium nitrate, terbium nitrate and Urea maintained at 90°C. Gadolinium hydroxy-carbonate films are then treated at 800°C for 2 hour to obtain Tb doped cubic Gd_2O_3 as confirmed by X-ray diffraction measurement. The photoluminescence spectra display characteristic Tb emission at 544 nm when excited at 285 nm. The lifetime of Tb emission is found to be of the order of few microseconds. (author)

  4. Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

    International Nuclear Information System (INIS)

    Scheidecker, R.W.

    1979-01-01

    Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

  5. Experimental and theoretical study of pure and doped crystals: Gd2O2S, Gd2O2S:Eu3+ and Gd2O2S:Tb3+

    Science.gov (United States)

    Wang, Fei; Chen, Xiumin; Liu, Dachun; Yang, Bin; Dai, Yongnian

    2012-08-01

    Quantum chemistry and experimental method were used to study on pure and doped Gd2O2S crystals in this paper. The band structure and DOS diagrams of pure and doped Gd2O2S crystals which calculated by using DFT (Density Functional Theory) method were illustrated to explain the luminescent properties of impurities in crystals. The calculations of the crystal structure were finished by using the program of CASTEP (Cambridge Sequential Total Energy Package). The samples showed the characteristic emissions of Tb3+ ions with 5D4-7FJ transitions and Eu3+ ions with 5D0-7FJ transitions which emit pure green luminescence and red luminescence respectively. The experimental excitation spectra of Tb3+ and Eu3+ doped Gd2O2S are in agreement of the DOS diagrams over the explored energy range, which has allowed a better understanding of different luminescence mechanisms of Tb3+ and Eu3+ in Gd2O2S crystals.

  6. Gd2O3 doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

    International Nuclear Information System (INIS)

    Fu, Peng; Xu, Zhijun; Chu, Ruiqing; Li, Wei; Wang, Wei; Liu, Yong

    2012-01-01

    Highlights: ► Gd 2 O 3 doped BNKT18 piezoelectric ceramics were designed and prepared. ► The electrical properties of the BNKT18 ceramics are improved with the addition of Gd 2 O 3 . ► The BNKT18 ceramics doped with 0.4 wt.% Gd 2 O 3 has better electrical properties. -- Abstract: Gd 2 O 3 (0–0.8 wt.%)-doped 0.82Bi 0.5 Na 0.5 TiO 3 –0.18Bi 0.5 K 0.5 TiO 3 (BNKT18) lead-free piezoelectric ceramics were synthesized by a conventional solid-state process. The effects of Gd 2 O 3 on the microstructure, the dielectric, ferroelectric and piezoelectric properties were investigated. X-ray diffraction (XRD) data shows that Gd 2 O 3 in an amount of 0.2–0.8 wt.% can diffuse into the lattice of BNKT18 ceramics and form a pure perovskite phase. Scanning electron microscope (SEM) images indicate that the grain size of BNKT18 ceramics decreases with the increase of Gd 2 O 3 content; in addition, all the modified ceramics have a clear grain boundary and a uniformly distributed grain size. At room temperature, the ferroelectric and piezoelectric properties of the BNKT18 ceramics have been improved with the addition of Gd 2 O 3 , and the BNKT18 ceramics doped with 0.4 wt.% Gd 2 O 3 have the highest piezoelectric constant (d 33 = 137 pC/N), highest relative dielectric constant (ε r = 1023) and lower dissipation factor (tan δ = 0.044) at a frequency of 10 kHz. The BNKT18 ceramics doped with 0.2 wt.% Gd 2 O 3 have the highest planar coupling factor (k p = 0.2463).

  7. High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library

    International Nuclear Information System (INIS)

    Chang, K.-S.; Lu, W.-C.; Wu, C.-Y.; Feng, H.-C.

    2014-01-01

    Highlights: • Amorphous N 2 -doped HfO 2 –TiO 2 libraries were fabricated using sputtering. • Structure and quality of the dielectric and interfacial layers were investigated. • κ (54), J L < 10 −6 A/cm 2 , and equivalent oxide thickness (1 nm) were identified. - Abstract: High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO 2 –TiO 2 and N 2 -doped HfO 2 –TiO 2 (HfON–TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10 −6 A/cm 2 , and an equivalent oxide thickness of approximately 1 nm were identified in an HfON–TiON library within a composition range of 68–80 at.% Ti. This library exhibits promise for application in highly advanced metal–oxide–semiconductor (higher-κ) gate stacks

  8. Photoluminescence and thermoluminescence properties of Tb3+ doped K3Gd(PO4)2 nanophosphor

    International Nuclear Information System (INIS)

    Gupta, Palvi; Bedyal, A.K.; Kumar, Vinay; Khajuria, Y.; Lochab, S.P.; Pitale, S.S.; Ntwaeaborwa, O.M.; Swart, H.C.

    2014-01-01

    Energy level diagram of Tb 3+ ion in the K 3 Gd(PO 4 ) 2 host lattice. - Highlights: • First time, a detailed TL and PL study on undoped and Tb 3+ doped K 3 Gd(PO 4 ) 2 nanophosphor. • Combustion method was employed to synthesize the Tb 3+ doped K 3 Gd(PO 4 ) 2 nanophosphor. • Mechanism of excitation and emission in undoped and Tb 3+ doped K 3 Gd(PO 4 ) 2 nanophosphor was given. - Abstract: Tb 3+ doped nanoparticulate K 3 Gd(PO 4 ) 2 phosphor was prepared by combustion method using urea as a fuel. The structure, optical and luminescent properties of the phosphor were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), diffuse reflectance spectroscopy (DRS), photoluminescence spectroscopy (PL), and thermoluminescence (TL) spectroscopy. In undoped K 3 Gd(PO 4 ) 2 , the excitation and emission peaks at 273 nm and 323 nm belongs to the 8 S 7/2 → 6 I J(J=7/2) and 6 P J(J=7/2) → 8 S 7/2 transitions of Gd 3+ while green emission was observed in the Tb 3+ doped K 3 Gd(PO 4 ) 2 . TL study was carried out after exposing the samples to γ-radiations (0.1–5 kGy) in the K 3 Gd(PO 4 ) 2 :Tb 3+ (1.5 mol%). The calculated kinetic parameters were compared with different methods. The band gap of the phosphor was estimated as 5.80 eV. The green shade of the Tb 3+ ion with the CIE coordinates (x, y) as (0.29, 0.54) was in good agreement with the well known green phosphors

  9. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

    Science.gov (United States)

    Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

    2018-01-01

    The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

  10. Luminescence and energy transfer of Tb3+-doped BaO-Gd2O3-Al2O3-B2O3-SiO2 glasses.

    Science.gov (United States)

    Zuo, Chenggang; Huang, Jinze; Liu, Shaoyou; Xiao, Anguo; Shen, Youming; Zhang, Xiangyang; Zhou, Zhihua; Zhu, Ligang

    2017-12-05

    Transparent Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses with the greater than 4g/cm 3 were prepared by high temperature melting method and its luminescent properties have been investigated by measured UV-vis transmission, excitation, emission and luminescence decay spectra. The transmission spectrum shows there are three weak absorption bands locate at about 312, 378 and 484nm in the glasses and it has good transmittance in the visible spectrum region. Intense green emission can be observed under UV excitation. The effective energy transfer from Gd 3+ ion to Tb 3+ ion could occur and sensitize the luminescence of Tb 3+ ion. The green emission intensity of Tb 3+ ion could change with the increasing SiO 2 /B 2 O 3 ratio in the borosilicate glass matrix. With the increasing concentration of Tb 3+ ion, 5 D 4 → 7 F J transitions could be enhanced through the cross relaxation between the two nearby Tb 3+ ions. Luminescence decay time of 2.12ms from 546nm emission is obtained. The results indicate that Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses would be potential scintillating material for applications in X-ray imaging. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. Preparation and characterization of Ce-doped HfO2 nanoparticles

    International Nuclear Information System (INIS)

    Gálvez-Barboza, S.; González, L.A.; Puente-Urbina, B.A.; Saucedo-Salazar, E.M.; García-Cerda, L.A.

    2015-01-01

    Highlights: • Ce-doped HfO 2 nanoparticles were prepared by a modified solgel method. • Ce-doped HfO 2 nanoparticles have a semispherical shape with sizes between 6 and 11.5 nm. • The samples doped with 10% in weight of Ce directly crystallized in a cubic structure. • A quick, straightforward and effective route for the preparation of Ce-doped nanoparticles. - Abstract: A modified solgel method to synthesize Ce-doped HfO 2 nanoparticles was carried out using a precursor material prepared with cerium nitrate, hafnium chloride, citric acid and ethylene glycol. The obtained precursor material was calcined at 500 and 700 °C for 2 h in air. The influence of the concentration of Ce and the calcination temperature was studied to observe the structural and morphological changes of the obtained materials. For the characterization, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman scattering (RS) were employed. The XRD patterns shown that the Ce-doped HfO 2 undergoes a structural transformation from monoclinic to cubic phase, which is significantly dependent on the Ce content and calcination temperature. TEM images have also confirmed the existence of semispherical nanoparticles with sizes between 6 and 11.5 nm

  12. Ratiometric luminescence thermometry with different combinations of emissions from Eu3+ doped Gd2Ti2O7 nanoparticles

    International Nuclear Information System (INIS)

    Lojpur, Vesna; Ćulubrk, Sanja; Dramićanin, Miroslav D.

    2016-01-01

    Herein, Eu 3+ doped Gd 2 Ti 2 O 7 nanoparticles were tested for application in ratiometric luminescence thermometry. It is shown that two combinations of emissions: one that uses two emissions of Eu 3+ ions and one that uses one emission of Eu 3+ ions and trap emission of Gd 2 Ti 2 O 7 provide thermometry over the 303–423 K temperature range with relative sensitivities between 0.14% K −1 and 0.95% K −1 . Thermometry based on two Eu 3+ emissions from 5 D 0 to 5 D 1 levels has a higher relative sensitivity, but lower absolute sensitivity than thermometry based on one Eu 3+ emission and trap emission of Gd 2 Ti 2 O 7 . The tested material is prepared by Pechini-type polymerized complex route and is composed of agglomerated nanoparticles of ~30–50 nm in size with pure-phase cubic structure (space group Fd-3m) as evidenced from electron microscopy and X-ray diffraction measurements. - Highlights: • Eu 3+ doped Gd 2 Ti 2 O 7 nanoparticles can serve as probes for luminescence thermometry. • Gd 2 Ti 2 O 7 trap emission is an excellent internal standard for luminescence thermometry. • Temperature is measured over 303–423 K range with sensitivity ranging 0.14–0.95% K −1 .

  13. Raman, dielectric and variable range hopping nature of Gd2O3-doped K0.5N0.5NbO3 piezoelectric ceramics

    Directory of Open Access Journals (Sweden)

    Mahesh Peddigari

    2015-10-01

    Full Text Available (K0.5Na0.5NbO3 (KNN + x wt% Gd2O3 (x = 0 -1.5 ceramics have been prepared by conventional solid state reaction method. The effect of Gd2O3 on the structural, microstructural and dielectric properties of KNN ceramics were studied systematically. The effect of Gd2O3 on phase transformation from orthorhombic to psuedocubic structure is explained interms of changes in the internal vibration modes of NbO6 octahedra. The Raman intensity of the stretching mode v1 enhanced and shifted toward higher wavenumber with Gd2O3 concentration, which is attributed to the increase in polarizability and change in the O-Nb-O bond angles. Microstructural analysis revealed that the grain size of the KNN ceramics decreases from 2.26 ± 1.07 μm to 0.35 ± 0.13 μm and becomes homogenous with an increase in Gd2O3 concentration. The frequency dependent dielectric spectra are analyzed by using Havriliak-Negami function. The fitted symmetry parameter and relaxation time (τ are found to be 0.914 and 8.78 × 10−10 ± 5.5 × 10−11 s, respectively for the sample doped with x = 1.0. The addition of Gd2O3 to the KNN shifted the polymorphic phase transition orthorhombic to tetragonal transition temperature (TO-T from 199oC to 85oC with enhanced dielectric permittivity (ε′ = 1139 at 1 MHz. The sample with x = 1.0, shown a high dielectric permittivity (ε′ = 879 and low dielectric loss (<5% in the broad temperature range (-140oC – 150oC with the Curie temperature 307 oC can have the potential for high temperature piezoelectric and tunable RF circuit applications. The temperature dependent AC-conductivity follows the variable range hopping conduction mechanism by obtaining the slope -0.25 from the ln[ln(ρac] versus ln(T graph in the temperature range of 133 K-308 K. The effect of Gd2O3 on the Mott’s parameters such as density of states (N(EF, hopping length (RH, and hopping energy (WH have been discussed.

  14. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

    OpenAIRE

    Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

    2006-01-01

    We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

  15. Effect of Mg"2"+ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd_3Al_2Ga_3O_1_2 crystals

    International Nuclear Information System (INIS)

    Lucchini, M.T.; Babin, V.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-01-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd_3Al_2Ga_3O_1_2 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd_3Al_2Ga_3O_1_2 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd_3Al_2Ga_3O_1_2 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  16. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Science.gov (United States)

    Sales, T. S. N.; Cavalcante, F. H. M.; Bosch-Santos, B.; Pereira, L. F. D.; Cabrera-Pasca, G. A.; Freitas, R. S.; Saxena, R. N.; Carbonari, A. W.

    2017-05-01

    In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2) nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD), and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%).

  17. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Directory of Open Access Journals (Sweden)

    T. S. N. Sales

    2017-05-01

    Full Text Available In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2 nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM with electron back scattering diffraction (EBSD, and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%.

  18. Photoluminescence and thermoluminescence properties of Tb{sup 3+} doped K{sub 3}Gd(PO{sub 4}){sub 2} nanophosphor

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Palvi; Bedyal, A.K. [School of Physics, Shri Mata Vaishno Devi University, Katra, 182320 Jammu and Kashmir (India); Kumar, Vinay, E-mail: vinaykdhiman@yahoo.com [School of Physics, Shri Mata Vaishno Devi University, Katra, 182320 Jammu and Kashmir (India); Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Khajuria, Y. [School of Physics, Shri Mata Vaishno Devi University, Katra, 182320 Jammu and Kashmir (India); Lochab, S.P. [Inter University Accelerator Centre, Anura Asaf Ali Marg, P. O. Box 10502, New Delhi 110067 (India); Pitale, S.S. [Crystal Technology Laboratory,TPD, Bhabha Atomic Research Centre Trombay, Mumbai 400085 (India); Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Ntwaeaborwa, O.M.; Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa)

    2014-12-15

    Energy level diagram of Tb{sup 3+} ion in the K{sub 3}Gd(PO{sub 4}){sub 2} host lattice. - Highlights: • First time, a detailed TL and PL study on undoped and Tb{sup 3+} doped K{sub 3}Gd(PO{sub 4}){sub 2} nanophosphor. • Combustion method was employed to synthesize the Tb{sup 3+} doped K{sub 3}Gd(PO{sub 4}){sub 2} nanophosphor. • Mechanism of excitation and emission in undoped and Tb{sup 3+} doped K{sub 3}Gd(PO{sub 4}){sub 2} nanophosphor was given. - Abstract: Tb{sup 3+} doped nanoparticulate K{sub 3}Gd(PO{sub 4}){sub 2} phosphor was prepared by combustion method using urea as a fuel. The structure, optical and luminescent properties of the phosphor were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), diffuse reflectance spectroscopy (DRS), photoluminescence spectroscopy (PL), and thermoluminescence (TL) spectroscopy. In undoped K{sub 3}Gd(PO{sub 4}){sub 2}, the excitation and emission peaks at 273 nm and 323 nm belongs to the {sup 8}S{sub 7/2} → {sup 6}I{sub J(J=7/2)} and {sup 6}P{sub J(J=7/2)} → {sup 8} S{sub 7/2} transitions of Gd{sup 3+} while green emission was observed in the Tb{sup 3+} doped K{sub 3}Gd(PO{sub 4}){sub 2}. TL study was carried out after exposing the samples to γ-radiations (0.1–5 kGy) in the K{sub 3}Gd(PO{sub 4}){sub 2}:Tb{sup 3+} (1.5 mol%). The calculated kinetic parameters were compared with different methods. The band gap of the phosphor was estimated as 5.80 eV. The green shade of the Tb{sup 3+} ion with the CIE coordinates (x, y) as (0.29, 0.54) was in good agreement with the well known green phosphors.

  19. Micro structural and magnetic characterization of Gd doped SnO2 nanoparticles

    International Nuclear Information System (INIS)

    Adhikari, R.; Das, A.K.; Karmakar, D.; Chandrasekhar Rao, T.V.; Ghatak, J.

    2008-01-01

    Gd doped SnO 2 nanoparticles were prepared by a chemical co-precipitation method. The prepared samples were calcined at 600 deg C. The annealed samples were characterized using XRD, TEM and SQUID magnetometry. The structural characterizations showed formation of particles in the nanometer regime. The M(T) and M(H) studies indicated an antiferromagnetic (AFM) interaction in 3 and 6% (at. wt.) Gd doped SnO 2 nanoparticles. The M(H) plot of both samples indicate a super paramagnetic (SPM) behavior at 7K as against the perfect AFM nature at 300K. The samples exhibit an insulating DMS nature, but we do not observe any ferromagnetism as was observed for other Gd doped systems like GaN and ZnO. (author)

  20. Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

    International Nuclear Information System (INIS)

    Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

    2006-01-01

    Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

  1. Effect of Mg$^{2+}$ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd$_{3}$Al$_{2}$Ga$_{3}$O$_{12}$ crystals

    CERN Document Server

    Lucchini, M.T.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-01-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd3Al2Ga3O12 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd3Al2Ga3O12 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd3Al2Ga3O12 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  2. Effects of additives on the sintering of UO2.Gd2O3 nuclear fuel

    International Nuclear Information System (INIS)

    Pagano Junior, Luciano

    2009-01-01

    The addition of 0.5wt% TiO 2 , Nb 2 O 5 , SiO 2 , Fe 2 O 3 and Al(OH) 3 in the UO 2 ·7%Gd 2 O 3 nuclear fuel and the effect on its sintering kinetics under a 99.999% H 2 atmosphere were investigated by stepwise isothermal dilatometry. This fuel, used as burnable poison in nuclear power plants, presents a diffusion barrier around 1573 K that impairs densification. The aid of the sintering additives TiO 2 , Al(OH) 3 , Nb 2 O 5 and Fe 2 O 3 turned out to be effective to obtain the required final density, unlike the effect observed for the SiO 2 -doped composition. The activation energy for the intermediate sintering stage was calculated by stepwise isothermal dilatometry method and a positive correlation with the sintered body density was found. The method was valid for part of the intermediate sintering stage, in the range from 1200 K to 1700 K for the doped compositions and with no additive, except for the SiO 2 -doped one, whose validity range was between 1500 K and 1900 K. The energy-density correlation was not valid for the SiO 2 -doped composition, whose effect was to reduce the final density. This anomalous behavior may be attributed to the intense loss of Si mass, probably due to lower oxides volatilization, during the initial sintering stage at temperatures lower than 1173 K. Similar loss, but no so intense, was observed for the Al(OH) 3 -doped composition in the temperature interval from 1173 K to 1573 K. The Si concentration decrease to residual values of dozens of parts per million may explain its anomalous behavior. The positive correlation between activation energy and sintered body density may be explained by the inhibitor role played by the TiO 2 , Nb 2 O 5 , Fe 2 O 3 and Al(OH) 3 additives on the diffusion mechanisms that enhance the coarsening regime. As a consequence, the densification mechanisms are favored in the competition for the surface free energy. The coarsening-densification transition temperature model, originally suggested for the UO 2

  3. Synthesis and characterization of Gd{sub 2}O{sub 3} doped UO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Soldati, A.L., E-mail: asoldati@cab.cnea.gov.ar [Centro Atómico Bariloche (CAB) – Comisión Nacional de Energía Atómica (CNEA), Av. Bustillo 9500, CP: 8400 Bariloche (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Av. De los Pioneros 2300, CP: 8400 Bariloche (Argentina); Gana Watkins, I. [Centro Atómico Bariloche (CAB) – Comisión Nacional de Energía Atómica (CNEA), Av. Bustillo 9500, CP: 8400 Bariloche (Argentina); Fernández Zuvich, A. [Centro Atómico Bariloche (CAB) – Comisión Nacional de Energía Atómica (CNEA), Av. Bustillo 9500, CP: 8400 Bariloche (Argentina); Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, CP: 8400 Bariloche (Argentina); Napolitano, F.; Troiani, H. [Centro Atómico Bariloche (CAB) – Comisión Nacional de Energía Atómica (CNEA), Av. Bustillo 9500, CP: 8400 Bariloche (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Av. De los Pioneros 2300, CP: 8400 Bariloche (Argentina); and others

    2016-10-15

    UO{sub 2} nanoparticles doped with 4, 8, 10 and 15 wt% Gd{sub 2}O{sub 3}were synthesized by a reverse strike method. Crystal structure and chemical homogeneity were evaluated using a combination of X-ray diffraction and microscopy tools. An exhaustive study of the composition and its homogeneity at the micro and at the nanometer level was carried out in this nuclear fuel material. Field Emission Gun Scanning and Transmission Electron Microscopy images revealed the presence of micrometer scale agglomerates of nanoparticles, with rounded morphology and an average crystallite size of 100 nm. Rietveld refinements of high-statistic X-ray Diffraction data determined the crystal structure and composition. Furthermore, Energy Dispersive Spectroscopy using a 2 nm{sup 2} spot on the sample surface determined a Gd concentration variation around the average of ±5% in different spots of a single crystallite and of ±10% between different crystallites. However, when measuring large amounts of nanoparticles the concentration averages, producing a homogeneous composition distribution at the micrometer scale. - Highlights: • Synthesis of 4, 8, 10 and 15wt% Gd{sub 2}O{sub 3} doped UO{sub 2} nanoparticles. • Crystallite sizes around 100 nm and rounded morphology. • 90% Gd distribution homogeneity between particles for the less concentrated sample. • High Statistic X-ray Rietveld analysis determined an U{sub 1−x}Gd{sub x}O{sub 2−δ} fcc structure. • Phases with similar crystal structure and symmetry, but different lattice parameter.

  4. High critical currents in heavily doped (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V., E-mail: selva@uh.edu; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L. [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, Texas 77204-4006 (United States); Cantoni, C. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381 (United States)

    2015-01-19

    REBa{sub 2}Cu{sub 3}O{sub x} ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J{sub c}) above 20 MA/cm{sup 2} at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes, which is more than three times higher than the J{sub c} typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m{sup 3} have also been attained at 20 K. A composition map of lift factor in J{sub c} (ratio of J{sub c} at 30 K, 3 T to the J{sub c} at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO{sub 3} (BZO) nanocolumn defect density of nearly 7 × 10{sup 11 }cm{sup −2} as well as 23 nm sized particles rich in Cu and Zr have been found in the high J{sub c} films.

  5. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    International Nuclear Information System (INIS)

    Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

    2015-01-01

    REBa 2 Cu 3 O x ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J c ) above 20 MA/cm 2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba 2 Cu 3 O x superconductor tapes, which is more than three times higher than the J c typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m 3 have also been attained at 20 K. A composition map of lift factor in J c (ratio of J c at 30 K, 3 T to the J c at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO 3 (BZO) nanocolumn defect density of nearly 7 × 10 11  cm −2 as well as 23 nm sized particles rich in Cu and Zr have been found in the high J c films

  6. Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications

    International Nuclear Information System (INIS)

    Nichau, Alexander

    2013-01-01

    . A lower limit found was EOT=5 Aa for Al doping inside TiN. The doping of TiN on LaLuO 3 is proven by electron energy loss spectroscopy (EELS) studies to modify the interfacial silicate layer to La-rich silicates or even reduce the layer. The oxide quality in Si/HfO 2 /TiN gate stacks is characterized by charge pumping and carrier mobility measurements on 3d MOSFETs a.k.a. FinFETs. The oxide quality in terms of the number of interface (and oxide) traps on top- and sidewall of FinFETs is compared for three different annealing processes. A high temperature anneal of HfO 2 improves significantly the oxide quality and mobility. The gate oxide integrity (GOI) of gate stacks below 1 nm EOT is determined by time-dependent dielectric breakdown (TDDB) measurements on FinFETs with HfO 2 /TiN gate stacks. A successful EOT scaling has always to consider the oxide quality and resulting reliability. Degraded oxide quality leads to mobility degradation and earlier soft-breakdown, i.e. leakage current increase.

  7. Preparation and studies of Eu3+ and Tb3+ co-doped Gd2O3 and Y2O3 sol-gel scintillating films

    International Nuclear Information System (INIS)

    Morales Ramirez, A. de J; Garcia Murillo, A.; Carrillo Romo, F. de J; Ramirez Salgado, J.; Le Luyer, C.; Chadeyron, G.; Boyer, D.; Moreno Palmerin, J.

    2009-01-01

    Eu 3+ (2.5 at.%) and Tb 3+ (0.005-0.01 at.%) co-doped gadolinium and yttrium oxide (Gd 2 O 3 and Y 2 O 3 ) powders and films have been prepared using the sol-gel process. High density and optical quality thin films were prepared with the dip-coating technique. Gadolinium (III) 2,4-pentadionate and yttrium (III) 2,4-pentadionate were used as precursors, and europium and terbium in their nitrate forms were used as doping agents. Chemical and structural analyses (infrared spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy) were conducted on both sol-gel precursor powders and dip-coated films. The morphology of thin films heat-treated at 700 o C was studied by means of atomic force microscopy. It was shown that the highly dense and very smooth films had a root mean roughness (RMS) of 2 nm ± 0.2 (A = 0.0075 Tb 3+ ) and 24 nm ± 3.0 (B = 0.01 Tb 3+ ). After treatment at 700 o C, the crystallized films were in the cubic phase and presented a polycrystalline structure made up of randomly oriented crystallites with grain sizes varying from 20 to 60 nm. The X-ray induced emission spectra of Eu 3+ - and Tb 3+ -doped Gd 2 O 3 and Y 2 O 3 powders showed that Tb 3+ contents of 0.005, 0.0075 and 0.01 at.% affected their optical properties. Lower Tb 3+ concentrations (down to 0.005 at.%) in both systems enhanced the light yield.

  8. Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    Science.gov (United States)

    Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

    2018-03-01

    Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

  9. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  10. Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

    Science.gov (United States)

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-05-24

    The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  11. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

    2015-01-19

    REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

  12. Thermoluminescence properties of Eu and Li co-doped Gd2O3, induced by UV light

    International Nuclear Information System (INIS)

    Hristov, H; Arhangelova, N; Velev, V; Uzunov, N M; Baneva, Y; Nedeva, D; Penev, I; Moschini, G; Rossi, P

    2012-01-01

    For some specific biomedical applications, connected with in-situ measurements of the absorbed dose of ultraviolet (UV) light, we have developed materials, sensitive to the light emission with a wavelength up to 320nm. Thermoluminescence (TL) yield of Gd 2 O 3 , doped with Eu and Li has been analysed with respect to the quantity of Li co-dopant. Lithium has been added as Li 2 CO 3 to a mixture of Gd 2 O 3 with 10 wt% Eu 2 O 3 . Pellets with the mixture have been sintered at a temperature of 1000°C. The kinetic parameters of the phosphors thus obtained have been studied from the TL glow curves after irradiation with UV light. It has been demonstrated that the addition of 16 wt% of Li 2 CO 3 to the Eu-doped Gd 2 O 3 yields a maximum intensity of the peaks at 87°C and at 145°C. Studies on the kinetic parameters as well as the TL properties of Eu-doped Gd 2 O 3 with the addition of 16% of Li 2 CO 3 have been conducted. It has been measured that two of the TL peaks of this phosphor have relatively long fading. Analysis of the TL properties of the phosphors obtained from Gd 2 O 3 , doped with Eu and Li, shows that they possess good sensitivity to the UV emission and could be used as appropriate phosphors for detection and quantitative measurements of UV light.

  13. Photoluminescence properties of Gd_2O_3:Eu"3"+ for solid state lighting

    International Nuclear Information System (INIS)

    Ukare, R.S.; Zade, G.D.; Dhoble, S.J.

    2016-01-01

    We synthesized Gd_2O_3 doped europium (III) (1 m%) nanophosphors using the precipitation method and combustion method. The synthesized nanophosphors were characterized by X-ray diffraction (XRD) and SEM techniques. The optical properties of the synthesized nanophosphors were investigated by photoluminescence spectroscopy. The XRD patterns of Gd_2O_3 revealed formation of desired cubic phase by both methods. The XRD of nanophosphors synthesized by both methods were highly consistent with standard JCPDS file of Gd_2O_3 indicating no structural change with incorporation of the Eu"3"+ ions in the Gd_2O_3 matrix. Both XRD and SEM result confirms the particle size of prepared sample in nanometer range. The phosphor could be effectively excited by near UV at 395 nm. The Eu"3"+ doping of Gd_2O_3 produced red luminescence around 613 nm. The stimulated CIE chromaticity coordinates were also calculated. (author)

  14. The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

    International Nuclear Information System (INIS)

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-01-01

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd 2 O 3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures

  15. Synthesis and different optical properties of Gd2O3 doped sodium zinc tellurite glasses

    Science.gov (United States)

    Samanta, Buddhadev; Dutta, Dibakar; Ghosh, Subhankar

    2017-06-01

    A series of Gd2O3 doped sodium zinc tellurite [xGd2O3-(0.8-x) TeO2-0.1Na2O-0.1ZnO] glasses are prepared by the conventional melt quenching method and their optical properties have been studied. UV-vis spectrophotometric studies within the wavelength range from 230 nm-800 nm are carried out in the integrating sphere mode to study the effect of Gd2O3 doping on the optical band gap (Eg), refractive index (n), dielectric constant (εr) and susceptibility (χ). Other physical properties like molar volume, molar refraction, polarizability, metallization criterion, number density of rare-earth ions (N), polaron radius (rp), inter ionic distance (ri), molar cation polarizability (∑αi), number of oxide ions in chemical composition (NO2-), optical band gap based electronic oxide ion polarizability (αO2-) and optical basicity (Λ) of glass samples have been studied on the basis of UV-vis spectra and density profile of the different glasses.

  16. Energy transfer and colorimetric properties of Eu3+/Dy3+ co-doped Gd2(MoO4)3 phosphors

    International Nuclear Information System (INIS)

    Wan Jing; Cheng Lihong; Sun Jiashi; Zhong Haiyang; Li Xiangping; Lu Weili; Tian Yue; Lin Hai; Chen Baojiu

    2010-01-01

    Dy 3+ single-doped and Eu 3+ /Dy 3+ co-doped gadolinium molybdate (Gd 2 (MoO 4 ) 3 ) phosphors were synthesized by a traditional solid-state reaction method. The XRD was used to confirm the crystal structure of the phosphors. The energy transfer between Eu 3+ and Dy 3+ was observed and studied. The Eu 3+ concentration can hardly affect the blue and yellow emission intensities of Dy 3+ , and the Eu 3+ emission intensity increases with the increase of Eu 3+ concentration. Co-doping with Eu 3+ compensated the red emission component of the Dy 3+ doped Gd 2 (MoO 4 ) 3 phosphor. Introducing proper amount of Eu 3+ can improve the colorimetric performance of the phosphors.

  17. High-temperature x-ray diffraction study of HfTiO4-HfO2 solid solutions

    International Nuclear Information System (INIS)

    Carpenter, D.A.

    1975-01-01

    High-temperature x-ray diffraction techniques were used to determine the axial thermal expansion curves of HfTiO 4 -HfO 2 solid solutions as a function of composition. Data show increasing anisotropy with increasing HfO 2 content. An orthorhombic-to-monoclinic phase transformation was detected near room temperature for compositions near the high HfO 2 end of the orthorhombic phase field and for compositions within the two-phase region (HfTiO 4 solid solution plus HfO 2 solid solution). An orthorhombic-to-cubic phase transformation is indicated by data from oxygen-deficient materials at greater than 1873 0 K. (U.S.)

  18. Effect of silver doping on infrared reflectance and Tc of superconducting GdBa2Cu(1 - x)3Ag3xO7

    International Nuclear Information System (INIS)

    Memon, A.; Khan, M.N.; Al-Dallal, S.; Tanner, D.B.; Porter, C.D.

    1990-01-01

    This paper reports on infrared reflectance of GdBa 2 Cu(1 - x) 3 Ag 3x O 7 ceramic superconductor with the composition of x = 0.025 and 0.05 performed in the frequency range of 100--5000 cm -1 . All the infrared active phonon modes allowed by the selection rules were observed in the reflection spectra of these compounds. The optical conductivity as calculated from K--K analysis further confirms the existence of these optical phonons. Besides the increase of the reflectivity in the silver doped samples, an extra phonon mode is observed, which is normally not seen at room temperature reflectance of GdBa 2 Cu 3 O 7 compounds. The four probe resistivity measurement show zero resistance at 88 K for x = 0, and 78 K for x = 0.025 in GdBa 2 Cu(1 - x) 3 Ag 3x O 7 compound

  19. Characterization of luminescent samarium doped HfO2 coatings synthesized by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Chacon-Roa, C; Guzman-Mendoza, J; Aguilar-Frutis, M; Garcia-Hipolito, M; Alvarez-Fragoso, O; Falcony, C

    2008-01-01

    Trivalent samarium (Sm 3+ ) doped hafnium oxide (HfO 2 ) films were deposited using the spray pyrolysis deposition technique. The films were deposited on Corning glass substrates at temperatures ranging from 300 to 550 deg. C using chlorides as raw materials. Films, mostly amorphous, were obtained when deposition temperatures were below 350 deg. C. However, for temperatures higher than 400 deg. C, the films became polycrystalline, presenting the HfO 2 monoclinic phase. Scanning electron microscopy of the films revealed a rough surface morphology with spherical particles. Also, electron energy dispersive analysis was performed on these films. The photoluminescence and cathodoluminescence characteristics of the HfO 2 : SmCl 3 films, measured at room temperature, exhibited four main bands centred at 570, 610, 652 and 716 nm, which are due to the well-known intra-4f transitions of the Sm 3+ ion. It was found that the overall emission intensity rose as the deposition temperature was increased. Furthermore, a concentration quenching of the luminescence intensity was also observed

  20. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

    2018-03-01

    In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

  1. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    International Nuclear Information System (INIS)

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-01-01

    Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

  2. Sintering densification of CaO–UO{sub 2}–Gd{sub 2}O{sub 3} nuclear fuel pellets

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yun [Fundamental Science on Radioactive Geology and Exploration Technology Laboratory, East China Institute of Technology, Nanchang, 330013, Jiangxi (China); Sun, Huidong [China Nucle Power Engineering Co., Ltd (China); Wang, Hui, E-mail: yinchanggeng5525@163.com [National Key Laboratory for Nuclear Fuel and Materials, Nuclear Power Institute of China, Chengdu, 610041 (China); Pan, Xiaoqiang; Li, Tongye; Liu, Jinhong; Zhang, Yong; Wang, Xinjie [National Key Laboratory for Nuclear Fuel and Materials, Nuclear Power Institute of China, Chengdu, 610041 (China)

    2015-10-15

    CaO-doped UO{sub 2}-10 wt% Gd{sub 2}O{sub 3} burnable poison fuel was prepared by co-precipitation reaction method. It was found that 0.3 wt% CaO-doping significantly improved the sintered density, grain sizes and crushing strength of UO{sub 2}–Gd{sub 2}O{sub 3} fuel pellets at the sintering temperature of 1650 °C in the sintering atmosphere of hydrogen for 3.5 h. In addition, homogeneous solid solution without precipitation of free phases of CaO and Gd{sub 2}O{sub 3} was successfully achieved. CaO doping in UO{sub 2}–Gd{sub 2}O{sub 3} fuel pellet system accelerated the thermally activated material transport, so the onset temperature of densification as well as the temperature of the maximum densification rate shifted to a lower temperature region. - Highlights: • A small amount of 0.3% doped CaO{sub 2} can significantly improve the sintered density. • Homogeneous solid solution forms without precipitation of free phases. • The pellet has good density, high strength and increasing grain sizes with homogeneity. • The pellet accelerates a thermally activated material transport.

  3. Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

    Science.gov (United States)

    Materlik, Robin; Künneth, Christopher; Falkowski, Max; Mikolajick, Thomas; Kersch, Alfred

    2018-04-01

    III-valent dopants have shown to be most effective in stabilizing the ferroelectric, crystalline phase in atomic layer deposited, polycrystalline HfO2 thin films. On the other hand, such dopants are commonly used for tetragonal and cubic phase stabilization in ceramic HfO2. This difference in the impact has not been elucidated so far. The prospect is a suitable doping to produce ferroelectric HfO2 ceramics with a technological impact. In this paper, we investigate the impact of Al, Y, and La doping, which have experimentally proven to stabilize the ferroelectric Pca21 phase in HfO2, in a comprehensive first-principles study. Density functional theory calculations reveal the structure, formation energy, and total energy of various defects in HfO2. Most relevant are substitutional electronically compensated defects without oxygen vacancy, substitutional mixed compensated defects paired with a vacancy, and ionically compensated defect complexes containing two substitutional dopants paired with a vacancy. The ferroelectric phase is strongly favored with La and Y in the substitutional defect. The mixed compensated defect favors the ferroelectric phase as well, but the strongly favored cubic phase limits the concentration range for ferroelectricity. We conclude that a reduction of oxygen vacancies should significantly enhance this range in Y doped HfO2 thin films. With Al, the substitutional defect hardly favors the ferroelectric phase before the tetragonal phase becomes strongly favored with the increasing concentration. This could explain the observed field induced ferroelectricity in Al-doped HfO2. Further Al defects are investigated, but do not favor the f-phase such that the current explanation remains incomplete for Al doping. According to the simulation, doping alone shows clear trends, but is insufficient to replace the monoclinic phase as the ground state. To explain this fact, some other mechanism is needed.

  4. Lattice contraction and lattice deformation of UO{sub 2} and ThO{sub 2} doped with Gd{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Baena, Angela [Belgian Nuclear Research Centre (SCK-CEN), Institute for Nuclear Materials Science, Boeretang 200, B-2400 Mol (Belgium); KU Leuven, Department of Chemistry, Celestijnenlaan 200F, P.O. Box 2404, B-3001 Heverlee (Belgium); Cardinaels, Thomas; Govers, Kevin; Pakarinen, Janne [Belgian Nuclear Research Centre (SCK-CEN), Institute for Nuclear Materials Science, Boeretang 200, B-2400 Mol (Belgium); Binnemans, Koen [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, P.O. Box 2404, B-3001 Heverlee (Belgium); Verwerft, Marc, E-mail: marc.verwerft@sckcen.be [Belgian Nuclear Research Centre (SCK-CEN), Institute for Nuclear Materials Science, Boeretang 200, B-2400 Mol (Belgium)

    2015-12-15

    The lattice deformations in two doped fluorite systems, (U{sub 1−x}Gd{sub x})O{sub 2.00} and (Th{sub 1−x}Gd{sub x})O{sub 2−x/2}, have been reassessed by precise X-ray and electron diffraction investigations and the results were interpreted using the Bond Valence Sum (BVS) approach. For the (U{sub 1−x}Gd{sub x})O{sub 2.00} system, the experimental findings and theoretical assessment confirm earlier work: the lattice keeps its fluorite structure with a unit cell parameter that contracts linearly with dopant concentration. The lattice contraction in the (Th{sub 1−x}Gd{sub x})O{sub 2−x/2} system has for the first time been analyzed up to the solubility limit. Similar as for (U{sub 1−x}Gd{sub x})O{sub 2.00}, the (Th{sub 1−x}Gd{sub x})O{sub 2−x/2} solid solution contracts linearly as a function of dopant concentration but additionally, it develops a superstructure which is closely related to the parent fluorite structure. An excess anion bixbyite trial model is proposed to describe this superstructure. - Highlights: • Lattice deformations of (U{sub 1−x}Gd{sub x})O{sub 2.00} & (Th{sub 1−x}Gd{sub x})O{sub 2−x/2} are not identical. • (U{sub 1−x}Gd{sub x})O{sub 2.00} retains its fluorite structure. • (Th{sub 1−x}Gd{sub x})O{sub 2−x/2} forms an excess-anion bixbyite structure. • (U{sub 1−x}Gd{sub x})O{sub 2.00} and (Th{sub 1−x}Gd{sub x})O{sub 2−x/2} contractions were evaluated with high precision.

  5. Red emitting phosphors of Eu3+ doped Na2Ln2Ti3O10 (Ln = Gd, Y) for white light emitting diodes

    International Nuclear Information System (INIS)

    Zhang, Niumiao; Guo, Chongfeng; Yin, Luqiao; Zhang, Jianhua; Wu, Mingmei

    2015-01-01

    Highlights: • Layered red phosphors Na 2 Ln 2 Ti 3 O 10 (Ln = Gd, Y):Eu 3+ were prepared. • The synthesis parameters of phosphors were optimized. • PL and thermal stability of the samples were investigated. • LED devices were also fabricated including the present red phosphor. - Abstract: A series of Eu 3+ doped Na 2 Ln 2 Ti 3 O 10 (Ln = Gd, Y) red-emitting phosphors for application in ultraviolet based light emitting diodes (LEDs) were successfully synthesized by a modified sol–gel method. Their structure and luminescent properties were characterized by powder X-ray diffraction (XRD), photoluminescence excitation (PLE) and emission (PL) spectra and absorption spectra, according to these results the optimal compositions and synthesis parameters were determined. In addition, the thermal stabilities of the phosphors were investigated according to the temperature-dependent PL spectra. The red and white-LEDs (W-LEDs) comprising the Na 2 Ln 2 Ti 3 O 10 :Eu 3+ (Ln = Gd, Y) red emitting phosphors were fabricated with a near-ultraviolet (n-UV) chip. In comparison with Na 2 Y 1.4 Eu 0.6 Ti 3 O 10 , the Na 2 Gd 0.6 Eu 1.4 Ti 3 O 10 phosphor offers higher brightness, quantum efficiency, and excellent thermal stability. W-LEDs comprising Na 2 Gd 0.6 Eu 1.4 Ti 3 O 10 showed bright white emission with a color rendering index (Ra) of 82, a color temperature of 2151 K, and Commission Internationale de I’Eclairage (CIE) color coordinates of (0.34, 0.37). The phosphor Na 2 Gd 0.6 Eu 1.4 Ti 3 O 10 is more suitable candidate for application in LEDs

  6. Co-precipitation synthesis and photoluminescence properties of K2GdZr (PO4)3:Eu3+—a deep red luminomagnetic nanophosphor

    International Nuclear Information System (INIS)

    Chawla, Santa; Ravishanker,; Rajkumar,; Khan, A.F.; Kotnala, R.K.

    2013-01-01

    Nanoparticles of Eu 3+ activated K 2 GdZr(PO 4 ) 3 has been successfully synthesized by controlled inclusive co-precipitation method in high alkaline environment to enable complex crystalline phase formation. Much enhanced deep red luminescence, broadened emission bands with unusually prominent 5 D 0 – 7 F 4 transition at 699 nm are defining characteristics of the nanoparticles compared to bulk counterpart synthesized by solid state reaction route. Among various excitation pathways such as charge transfer from O 2− –Eu 3+ , Gd 3+ –Eu 3+ , the direct excitation of Eu 3+ at 394 nm is the most effective as revealed by photoluminescence and time resolved studies. Occurrence and variation of superparamagnetism in undoped and Eu 3+ doped nanoparticles indicate the role of unpaired 4f electron spin of Gd 3+ in making the nanoparticles superparamagnetic. A room temperature cost effective synthesis process of Eu 3+ doped multimetallic complex phosphate supermagnetic nanophosphor can pave way for applications requiring such functionality. -- Highlights: ► Eu 3+ doped K 2 GdZr(PO 4 ) 3 nanocrystals have been synthesized successfully by coprecipitation. ► K 2 GdZr(PO 4 ) 3 :Eu 3+ emit intense deep red fluorescence. ► Red emitting K 2 GdZr(PO 4 ) 3 :Eu 3+ nanocrystals show superparamagnetism due to Gd 3+ . ► Luminomagnetic KGP:Eu 3+ have application potential in biology, lighting and display

  7. Thermal expansion of UO2-Gd2O3 fuel pellets

    International Nuclear Information System (INIS)

    Une, Katsumi

    1986-01-01

    In recent years, more consideration has been given to the application of UO 2 -Gd 2 O 3 burnable poison fuel to LWRs in order to improve the core physics and to extend the burnup. It has been known that UO 2 forms a single phase cubic fluorite type solid solution with Gd 2 O 3 up to 20 - 30 wt.% above 1300 K. The addition of Gd 2 O 3 to UO 2 lattices changes the properties of the fuel pellets. The limited data on the thermal expansion of UO 2 -Gd 2 O 3 fuel exist, but those are inconsistent. UO 2 -Gd 2 O 3 fuel pellets were fabricated, and the linear thermal expansion of UO 2 and UO 2 -(5, 8 and 10 wt.%)Gd 2 O 3 fuel pellets was measured with a differential dilatometer over the temperature range of 298 - 1973 K. A sapphire rod of 6 mm diameter and 15.5 mm length was used as the reference material. After the preheating cycle, the measurement was performed in argon atmosphere. The results for UO 2 pellets showed excellent agreement with the data in literatures. The linear thermal expansion of UO 2 -Gd 2 O 3 fuel pellets showed the increase with increasing the Gd 2 O 3 content. Consideration must be given to this excessive expansion in the fuel design of UO 2 -Gd 2 O 3 pellets. The equations for the linear thermal expansion and density of UO 2 -Gd 2 O 3 fuel pellets were derived by the method of least squares. (Kako, I.)

  8. Study of bulk Hafnium oxide (HfO2) under compression

    Science.gov (United States)

    Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

    2018-04-01

    Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

  9. Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

    Science.gov (United States)

    Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

    2018-02-01

    In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

  10. Synthesis and Characterization of Yttria-Stabilized Zirconia Nanoparticles Doped with Ytterbium and Gadolinium: ZrO2 9.5Y2O3 5.6Yb2O3 5.2Gd2O3

    Science.gov (United States)

    Bahamirian, M.; Hadavi, S. M. M.; Rahimipour, M. R.; Farvizi, M.; Keyvani, A.

    2018-06-01

    Defect cluster thermal barrier coatings (TBCs) are attractive alternatives to Yttria-stabilized zirconia (YSZ) in advanced applications. In this study, YSZ nanoparticles doped with ytterbium and gadolinium (ZrO2 9.5Y2O3 5.6Yb2O3 5.2Gd2O3 (ZGYbY)) were synthesized through a chemical co-precipitation and calcination method, and characterized by in situ high-temperature X-ray diffraction analysis in the temperature range of 25 °C to 1000 °C (HTK-XRD), thermogravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy, and field emission scanning electron microscopy (FE-SEM). Precise cell parameters of t-prime phase and the best zirconia phase for TBC applications were calculated by Cohen's and Rietveld refinement methods. Optimum crystallization temperature of the precursor powder was found to be 1000 °C. Furthermore, FE-SEM results for the calcined ZGYbY powders indicated orderly particles of uniform shape and size with a small tendency toward agglomeration. Average lattice thermal expansion coefficient in the temperature range of 25 °C to 1000 °C was determined to be 31.71 × 10-6 K-1.

  11. Synthesis and Characterization of Yttria-Stabilized Zirconia Nanoparticles Doped with Ytterbium and Gadolinium: ZrO2 9.5Y2O3 5.6Yb2O3 5.2Gd2O3

    Science.gov (United States)

    Bahamirian, M.; Hadavi, S. M. M.; Rahimipour, M. R.; Farvizi, M.; Keyvani, A.

    2018-03-01

    Defect cluster thermal barrier coatings (TBCs) are attractive alternatives to Yttria-stabilized zirconia (YSZ) in advanced applications. In this study, YSZ nanoparticles doped with ytterbium and gadolinium (ZrO2 9.5Y2O3 5.6Yb2O3 5.2Gd2O3 (ZGYbY)) were synthesized through a chemical co-precipitation and calcination method, and characterized by in situ high-temperature X-ray diffraction analysis in the temperature range of 25 °C to 1000 °C (HTK-XRD), thermogravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy, and field emission scanning electron microscopy (FE-SEM). Precise cell parameters of t-prime phase and the best zirconia phase for TBC applications were calculated by Cohen's and Rietveld refinement methods. Optimum crystallization temperature of the precursor powder was found to be 1000 °C. Furthermore, FE-SEM results for the calcined ZGYbY powders indicated orderly particles of uniform shape and size with a small tendency toward agglomeration. Average lattice thermal expansion coefficient in the temperature range of 25 °C to 1000 °C was determined to be 31.71 × 10-6 K-1.

  12. Characterization and luminescent properties of Eu3+ doped Gd2Zr2O7 nanopowders

    International Nuclear Information System (INIS)

    Rabasovic, M.S.; Sevic, D.; Krizan, J.; Terzic, M.; Mozina, J.; Marinkovic, B.P.; Savic-Sevic, S.; Mitric, M.; Rabasovic, M.D.; Romcevic, N.

    2015-01-01

    Highlights: • Nanopowders Gd 2 Zr 2 O 7 doped by europium ions (Eu 3+ ) have been synthesized. • Their luminescence properties have been measured at room temperature. • The temporal evolution of laser induced phenomena are presented using time-resolved technique. • Lifetime analysis for luminescence bands in emission spectra has been done. - Abstract: Nanopowders based on gadolinium zirconium oxide (Gd 2 Zr 2 O 7 ) doped by europium ions (Eu 3+ ) were successfully prepared using a flame combustion method. This material is suitable for various optical devices. The structure of prepared materials has been confirmed and characterized using X-ray powder diffraction (XRD), scanning electron microscope (SEM) and photoluminescence (PL) techniques. The luminescence properties of synthesized nanopowders were characterized by emission spectra and luminescence lifetimes by using the streak camera system. PL spectra were obtained at three different excitation wavelengths (Optical Parametric Oscilator (OPO) at 360 nm, laser diode at 365 nm and Ar laser line at 514.5 nm). The strong emission lines at 611 nm and 630 nm corresponding to the 5 D 0 → 7 F 2 long lived transition could be used as a new red light source in optical devices

  13. Conversion of green emission into white light in Gd{sub 2}O{sub 3} nanophosphors

    Energy Technology Data Exchange (ETDEWEB)

    Jayasimhadri, M.; Ratnam, B.V. [Department of Physics, Changwon National University, Changwon, 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.k [Department of Physics, Changwon National University, Changwon, 641-773 (Korea, Republic of); Lee, Ho Sueb [Department of Physics, Changwon National University, Changwon, 641-773 (Korea, Republic of); Yi, Soung-Soo [Department of Photonics, Silla University, Busan (Korea, Republic of); Jeong, Jung-Hyun [Department of Physics, Pukyong National University, Busan (Korea, Republic of)

    2010-09-01

    Gd{sub 2}O{sub 3} nanophosphors were prepared by combustion synthesis with and without doping of Dy{sup 3+} ions. The X-ray powder diffraction patterns indicate that as-prepared Gd{sub 2}O{sub 3} and 0.1 mol% Dy{sub 2}O{sub 3} doped Gd{sub 2}O{sub 3} nanophosphors have monoclinic structures. The transmission electron microscope (TEM) studies revealed that the as-prepared phosphors had an average crystallite sizes around 37 nm. The excitation and emission properties have been investigated for Dy{sup 3+} doped and undoped Gd{sub 2}O{sub 3} nanophosphors. New emission bands were observed in the visible region for Gd{sub 2}O{sub 3} nanophosphors without any rare earth ion doping under different excitations. A tentative mechanism for the origin of luminescence from Gd{sub 2}O{sub 3} host was discussed. Emission properties also measured for 0.1 mol% Dy{sup 3+} doped Gd{sub 2}O{sub 3} nanophosphors and found the characteristic Dy{sup 3+} visible emissions at 489 and 580 nm due to {sup 4}F{sub 9/2} {yields} {sup 6}H{sub 15/2} and {sup 4}F{sub 9/2} {yields} {sup 6}H{sub 13/2} transitions, respectively. The chromaticity coordinates were calculated based on the emission spectra of Dy{sup 3+} doped and undoped Gd{sub 2}O{sub 3} nanophosphors and analyzed with Commission Internationale de l'Eclairage (CIE) chromaticity diagram. These nanophosphors exhibit green color in undoped Gd{sub 2}O{sub 3} and white color after adding 0.1 mol% Dy{sub 2}O{sub 3} to Gd{sub 2}O{sub 3} nanophosphors under UV excitation. These phosphors could be a promising phosphor for applications in flat panel displays.

  14. Preparation and studies of Eu{sup 3+} and Tb{sup 3+} co-doped Gd{sub 2}O{sub 3} and Y{sub 2}O{sub 3} sol-gel scintillating films

    Energy Technology Data Exchange (ETDEWEB)

    Morales Ramirez, A. de J, E-mail: amoralesra@ipn.m [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada (CICATA) Unidad Altamira Instituto Politecnico Nacional Km. 14.5 Carr. Tampico-Puerto Industrial, C.P. 89600, Altamira, Tamaulipas (Mexico); Depto. de Ingenieria Metalurgica, ESIQIE-Instituto Politecnico Nacional UPALM C.P. 07738, Mexico D.F. (Mexico); Garcia Murillo, A.; Carrillo Romo, F. de J [Depto. de Ingenieria Metalurgica, ESIQIE-Instituto Politecnico Nacional UPALM C.P. 07738, Mexico D.F. (Mexico); Ramirez Salgado, J. [Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas No. 152, CP 07730, Mexico D.F. (Mexico); Le Luyer, C. [LPCML, CNRS-UMR 5620/Universite Claude Bernard Lyon 1/69622 Villeurbanne Cedex (France); Chadeyron, G.; Boyer, D. [Laboratoire des Materiaux Inorganiques, CNRS-UMR 6002, Universite Blaise Pascal, 24 Ave des Landais F 63177 Aubiere Cedex (France); Moreno Palmerin, J. [Depto. de Ingenieria Metalurgica, ESIQIE-Instituto Politecnico Nacional UPALM C.P. 07738, Mexico D.F. (Mexico)

    2009-10-30

    Eu{sup 3+} (2.5 at.%) and Tb{sup 3+} (0.005-0.01 at.%) co-doped gadolinium and yttrium oxide (Gd{sub 2}O{sub 3} and Y{sub 2}O{sub 3}) powders and films have been prepared using the sol-gel process. High density and optical quality thin films were prepared with the dip-coating technique. Gadolinium (III) 2,4-pentadionate and yttrium (III) 2,4-pentadionate were used as precursors, and europium and terbium in their nitrate forms were used as doping agents. Chemical and structural analyses (infrared spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy) were conducted on both sol-gel precursor powders and dip-coated films. The morphology of thin films heat-treated at 700 {sup o}C was studied by means of atomic force microscopy. It was shown that the highly dense and very smooth films had a root mean roughness (RMS) of 2 nm {+-} 0.2 (A = 0.0075 Tb{sup 3+}) and 24 nm {+-} 3.0 (B = 0.01 Tb{sup 3+}). After treatment at 700 {sup o}C, the crystallized films were in the cubic phase and presented a polycrystalline structure made up of randomly oriented crystallites with grain sizes varying from 20 to 60 nm. The X-ray induced emission spectra of Eu{sup 3+}- and Tb{sup 3+}-doped Gd{sub 2}O{sub 3} and Y{sub 2}O{sub 3} powders showed that Tb{sup 3+} contents of 0.005, 0.0075 and 0.01 at.% affected their optical properties. Lower Tb{sup 3+} concentrations (down to 0.005 at.%) in both systems enhanced the light yield.

  15. Scintillation properties of Zr co-doped Ce:(Gd, La)_2Si_2O_7 grown by the Czochralski process

    International Nuclear Information System (INIS)

    Murakami, Rikito; Kurosawa, Shunsuke; Shoji, Yasuhiro; Jary, Vitezslav; Ohashi, Yuji; Pejchal, Jan; Yokota, Yuui; Kamada, Kei; Nikl, Martin; Yoshikawa, Akira

    2016-01-01

    (Gd_0_._7_5,Ce_0_._0_1_5,La_0_._2_3_5)_2Si_2O_7 (Ce:La-GPS) single crystals co-doped with 0, 100, 200, 500 and 1000 ppm Zr were grown by the Czochralski process, and their scintillation properties were investigated. We investigated the co-doping effect of a stable tetravalent ion in Ce:La-GPS for the first time. The scintillation decay times in the faster component were shortened with increasing the Zr concentration. While the non-co-doped sample showed ∼63 ns day time, the Zr 100, 200, 500 and 1000 ppm co-doped samples showed ∼61, ∼59, ∼57, ∼54 ns, respectively. Additionally, light output, photon nonproportional response (PNR) and other optical properties were investigated. - Highlights: • Czochralski growth of Ce:(Gd,La)_2Si_2O_7 single crystals. • Co-doping effect of a stable tetravalent ion in Ce:(Gd,La)_2Si_2O_7 system. • Photon nonproportional response of Zr co-doped Ce:(Gd,La)_2Si_2O_7.

  16. Enhanced photoluminescence of Sm{sup 3+}/Bi{sup 3+} co-doped Gd{sub 2}O{sub 3} phosphors by combustion synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Liu Guangsheng; Zhang Ying [Institute of Micro-system Physics, School of Physics and Electronics, Henan University, Kaifeng 475001 (China); Yin Jiang [Department of Physics, Nanjing University, Nanjing 210093 (China); Zhang, W.F. [Institute of Micro-system Physics, School of Physics and Electronics, Henan University, Kaifeng 475001 (China)], E-mail: wfzhang@henu.edu.cn

    2008-12-15

    Gd{sub 2}O{sub 3}:Sm{sup 3+} and Gd{sub 2}O{sub 3}:Sm{sup 3+},Bi{sup 3+} powders were prepared by a combustion method. Their structures were determined using X-ray diffraction. UV-visible absorption and photoluminescence spectra were investigated for Gd{sub 2}O{sub 3}:Sm{sup 3+} and Gd{sub 2}O{sub 3}:Sm{sup 3+},Bi{sup 3+} at different annealing temperatures and different doping concentrations. The emission spectra of all samples presented the characteristic emission narrow lines arising from the {sup 4}G{sub 5/2}{yields}{sup 6}H{sub J} transitions (J=5/2, 7/2, and 9/2) of Sm{sup 3+} ions upon excitation with UV irradiation. The emission intensity of Sm{sup 3+} ions was largely enhanced with introducing Bi{sup 3+} ions into Gd{sub 2}O{sub 3}:Sm{sup 3+} and the maximum occurred at a Bi{sup 3+} concentration of 0.5 mol%. The relevant mechanisms were discussed with the sensitization theory by Dexter and the aggregation behavior of Bi{sup 3+} ions.

  17. PAC study in the HfO2-SiO2 system

    International Nuclear Information System (INIS)

    Chain, C.Y.; Damonte, L.C.; Ferrari, S.; Munoz, E.; Torres, C. Rodriguez; Pasquevich, A.F.

    2010-01-01

    A high-k HfO 2 /SiO 2 gate stack is taking the place of SiO 2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO 2 and amorphous SiO 2 powder mixture has been carried out by perturbed angular correlations (PAC) technique. The study was complemented with X-ray diffraction and positron annihilation lifetime spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO 4 (hafnon) was observed in the milled blends annealed at high temperatures.The PAC results of the milled samples are compared with those obtained for pure m-ZrO 2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO 2 -SiO 2 .

  18. Hot corrosion behavior of nanostructured Gd2O3 doped YSZ thermal barrier coating in presence of Na2SO4 + V2O5 molten salts

    Directory of Open Access Journals (Sweden)

    Yixiong Wang

    2017-08-01

    Full Text Available Nickel-based superalloy DZ125 was first sprayed with a NiCrAlY bond coat and followed with a nanostructured 2 mol% Gd2O3−4.5 mol% Y2O3-ZrO2 (2GdYSZ topcoat using air plasma spraying (APS. Hot corrosion behavior of the as-sprayed thermal barrier coatings (TBCs were investigated in the presence of 50 wt% Na2SO4 + 50 wt% V2O5 as the corrosive molten salt at 900 °C for 100 h. The analysis results indicate that Gd doped YVO4 and m-ZrO2 crystals were formed as corrosion products due to the reaction of the corrosive salts with stabilizers (Y2O3, Gd2O3 of zirconia. Cross-section morphology shows that a thin layer called TGO was formed at the bond coat/topcoat interface. After hot corrosion test, the proportion of m-ZrO2 phase in nanostructured 2GdYSZ coating is lower than that of nano-YSZ coating. The result reveals that nanostructured 2GdYSZ coating exhibits a better hot corrosion resistance than nano-YSZ coating.

  19. Mössbauer spectroscopy study of magnetic fluctuations in superconducting RbGd2Fe4As4O2

    Science.gov (United States)

    Li, Y.; Wang, Z. C.; Cao, G. H.; Zhang, J. M.; Zhang, B.; Wang, T.; Pang, H.; Li, F. S.; Li, Z. W.

    2018-05-01

    57Fe Mössbauer spectra were measured at different temperatures between 5.9 K and 300 K on the recently discovered self-doped superconducting RbGd2Fe4As4O2 with Tc as high as 35 K. Singlet pattern was observed down to the lowest temperature measured in this work, indicating the absence of static magnetic order on the Fe site. The intermediate isomer shift in comparison with that of the samples RbFe2As2 and GdFeAsO confirms the self doping induced local electronic structure change. Surprisingly, we observe two magnetic fluctuation induced spectral broadenings below ∼ 15 K and ∼ 100 K which are believed to be originated from the transferred magnetic fluctuations of the Gd3+ moments and that of the magnetic fluctuations of the Fe atoms, respectively.

  20. Polarized spectroscopic properties of Er3+:Gd2SiO5 crystal and evaluation of Er3+:Yb3+:Gd2SiO5 crystal as a 1.55 μm laser medium

    International Nuclear Information System (INIS)

    Wang, H.; Huang, J.H.; Gong, X.H.; Chen, Y.J.; Lin, Y.F.; Luo, Z.D.; Huang, Y.D.

    2016-01-01

    An Er 3+ -doped Gd 2 SiO 5 single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Intensity parameters, spontaneous emission probabilities, fluorescence branching ratios, and radiative lifetimes were estimated on the basis of the Judd–Ofelt theory. Besides, potentiality of 1.55 μm laser emission in an Er 3+ –Yb 3+ co-doped Gd 2 SiO 5 crystal was evaluated.

  1. Emission analysis of Tb3+ -and Sm3+ -ion-doped (Li2 O/Na2 O/K2 O) and (Li2 O + Na2 O/Li2 O + K2 O/K2 O + Na2 O)-modified borosilicate glasses.

    Science.gov (United States)

    Naveen Kumar Reddy, B; Sailaja, S; Thyagarajan, K; Jho, Young Dahl; Sudhakar Reddy, B

    2018-05-01

    Four series of borosilicate glasses modified by alkali oxides and doped with Tb 3+ and Sm 3+ ions were prepared using the conventional melt quenching technique, with the chemical composition 74.5B 2 O 3 + 10SiO 2 + 5MgO + R + 0.5(Tb 2 O 3 /Sm 2 O 3 ) [where R = 10(Li 2 O /Na 2 O/K 2 O) for series A and C, and R = 5(Li 2 O + Na 2 O/Li 2 O + K 2 O/K 2 O + Na 2 O) for series B and D]. The X-ray diffraction (XRD) patterns of all the prepared glasses indicate their amorphous nature. The spectroscopic properties of the prepared glasses were studied by optical absorption analysis, photoluminescence excitation (PLE) and photoluminescence (PL) analysis. A green emission corresponding to the 5 D 4 → 7 F 5 (543 nm) transition of the Tb 3+ ions was registered under excitation at 379 nm for series A and B glasses. The emission spectra of the Sm 3+ ions with the series C and D glasses showed strong reddish-orange emission at 600 nm ( 4 G 5/2 → 6 H 7/2 ) with an excitation wavelength λ exci = 404 nm ( 6 H 5/2 → 4 F 7/2 ). Furthermore, the change in the luminescence intensity with the addition of an alkali oxide and combinations of these alkali oxides to borosilicate glasses doped with Tb 3+ and Sm 3+ ions was studied to optimize the potential alkali-oxide-modified borosilicate glass. Copyright © 2017 John Wiley & Sons, Ltd.

  2. Anisotropy of the irreversibility field for Zr-doped $(Y,Gd)Ba_2Cu_3O_{7-x}$ thin films up to 45T

    OpenAIRE

    Tarantini, C.; Jaroszynski, J.; Kametani, F.; Zuev, Y. L.; Gurevich, A.; Chen, Y.; Selvamanickam, V.; Larbalestier, D. C.; Christen, D. K.

    2012-01-01

    The anisotropic irreversibility field B$_{Irr}$ of two $YBa_2Cu_3O_{7-x}$ thin films doped with additional rare earth (RE)=(Gd,Y) and Zr and containing strong correlated pins (splayed BaZrO$_{3}$ nanorods, and $RE_2O_3$ nanoprecipitates), has been measured over a very broad range up to 45T at temperatures 56 K

  3. Structural evolution and electrical properties of BaTiO{sub 3} doped with Gd{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez Lara, Juan Pablo; Perez Labra, Miguel; Barrientos Hernandez, Francisco Raul, E-mail: miguelabra@hotmail.com [Autonomous University of Hidalgo (Mexico); Romero Serrano, Jose Antonio; Hernandez Ramirez, Aurelio [Metallurgy and Materials Department, ESIQIE-IPN, UPALM, Zacatenco (Mexico); Avila Davila, Erika Osiris [Mechanical Engineering Department, Technological Institute of Pachuca, Hidalgo (Mexico); Thangarasu, Pandiyan [Facultad de Quimica, UNAM, Mexico D.F. (Mexico)

    2017-03-15

    BaTiO{sub 3} doped with Gd{sup 3+} (Ba{sub 1-x}Gd{sub x}Ti{sub 1-x/4}O{sub 3}) was synthesized using the solid-state reaction method with x = 0.001, 0.003, 0.005, 0.01, 0.05, 0.1, 0.15, 0.20, 0.25, 0.30, and 0.35 Gd{sup 3+} (wt. %). The powders were decarbonated at 900 °C and sintered at 1400 °C for 8 hours. The tetragonality of the synthesized Gd{sup 3+}-doped BaTiO{sub 3} particles was analyzed. XRD patterns and Raman spectra revealed that the crystal phase of the obtained particles was predominately tetragonal BaTiO{sub 3}; the intensity of the Raman bands at 205 cm{sup -1}, 265 cm{sup -1}, and 304 cm{sup -1} decreased when Gd'3{sup +} was increased. A secondary phase (Gd{sub 2}Ti{sub 2}O{sub 7}) was found when the Gd{sup 3+} content was higher than 0.15 wt. %. The capacitance of the sintering pellets was measured at 1 kHz; these values were used to calculate the relative permittivity, the maximum permittivity values were recorded for the samples with x = 0.001, 0.005, and 0.1. (author)

  4. Energy transfer mechanism from Gd3+ to Sm3+ in K3Gd(PO4)2:Sm3+ phosphor

    International Nuclear Information System (INIS)

    Gupta, Palvi; Bedyal, A K; Kumar, Vinay; Khajuria, Y; Sharma, Vishal; Ntwaeaborwa, O M; Swart, H C

    2015-01-01

    Undoped K 3 Gd(PO 4 ) 2 and trivalent samarium (0.5–2.5 mol%) doped K 3 Gd(PO 4 ) 2 phosphors were synthesized by the solid-state method. The phase formation, optical and luminescence properties were investigated by x-ray diffraction (XRD), diffuse reflectance (DR) spectroscopy, and photoluminescence (PL) spectroscopy. The fluorescence decay spectra of the obtained phosphors were also recorded to study the energy transfer from sensitizer (Gd 3+ ) to activator (Sm 3+ ). Energy transfer effects from sensitizer to activator caused by rare-earth ions were mainly observed in the obtained PL and lifetime spectra. The decay curves of K 3 Gd(PO 4 ) 2 phosphor with different Sm 3+ ions concentrations were found to be non-exponential and the data is well fitted with the Inokuti–Hirayama (I–H) model. The energy transfer parameters such as critical distance for the transfer processes were determined. The Commission Internationale de l’Eclairage (CIE) chromatic coordinates and color-correlated temperature were also determined for the prepared phosphor. (paper)

  5. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    Directory of Open Access Journals (Sweden)

    Chin-Sheng Pang

    2014-04-01

    Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

  6. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    Science.gov (United States)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  7. The influence of thermal treatment on the phase development in HfO2-Al2O3 and ZrO2-Al2O3 systems

    International Nuclear Information System (INIS)

    Stefanic, G.; Music, S.; Trojko, R.

    2005-01-01

    Amorphous precursors of HfO 2 -AlO 1.5 and ZrO 2 -AlO 1.5 systems covering the whole concentration range were co-precipitated from aqueous solutions of the corresponding salts. The thermal behaviour of the amorphous precursors was examined by differential thermal analysis, X-ray powder diffraction (XRD), laser Raman spectroscopy and scanning electron microscopy. The crystallization temperature of both systems increased with increase in the AlO 1.5 content, from 530 to 940 deg. C in the HfO 2 -AlO 1.5 system, and from 405 to 915 deg. C in the ZrO 2 -AlO 1.5 system. The results of phase analysis indicate an extended capability for the incorporation of Al 3+ ions in the metastable HfO 2 - and ZrO 2 -type solid solutions obtained after crystallization of amorphous co-gels. Precise determination of lattice parameters, performed using whole-powder-pattern decomposition method, showed that the axial ratio c f /a f in the ZrO 2 - and HfO 2 -type solid solutions with 10 mol% or more of Al 3+ approach 1. The tetragonal symmetry of these samples, as determined by laser Raman spectroscopy, was attributed to the displacement of the oxygen sublattice from the ideal fluorite positions. It was found that the lattice parameters of the ZrO 2 -type solid solutions decreased with increasing Al 3+ content up to ∼10 mol%, whereas above 10 mol%, further increase of the Al 3+ content has very small influence on the unit-cell volume of both HfO 2 - and ZrO 2 -type solid solutions. The reason for such behaviour was discussed. The solubility of Hf 4+ and Zr 4+ ions in the aluminium oxides lattice appeared to be negligible

  8. Formation of qualified BaHfO3 doped Y0.5Gd0.5Ba2Cu3O7-δ film on CeO2 buffered IBAD-MgO tape by self-seeding pulsed laser deposition

    Science.gov (United States)

    Liu, Linfei; Wang, Wei; Yao, Yanjie; Wu, Xiang; Lu, Saidan; Li, Yijie

    2018-05-01

    Improvement in the in-filed transport properties of REBa2Cu3O7-δ (RE = rare earth elements, REBCO) coated conductor is needed to meet the performance requirements for various practical applications, which can be accomplished by introducing artificial pinning centers (APCs), such as second phase dopant. However, with increasing dopant level the critical current density Jc at 77 K in zero applied magnetic field decreases. In this paper, in order to improve Jc we propose a seed layer technique. 5 mol% BaHfO3 (BHO) doped Y0.5Gd0.5Ba2Cu3O7-δ (YGBCO) epilayer with an inserted seed layer was grown on CeO2 buffered ion beam assisted deposition MgO (IBAD-MgO) tape by pulsed laser deposition. The effect of the conditions employed to prepare the seed layer, including tape moving speed and chemical composition, on the quality of 5 mol% BHO doped YGBCO epilayer was systematically investigated by X-ray diffraction (XRD) measurements and scanning electron microscopy (SEM) observations. It was found that all the samples with seed layer have higher Jc (77 K, self-field) than the 5 mol% BHO doped YGBCO film without seed layer. The seed layer could inhibit deterioration of the Jc at 77 K and self-filed. Especially, the self-seed layer (5 mol% BHO doped YGBCO seed layer) was more effective in improving the crystal quality, surface morphology and superconducting performance. At 4.2 K, the 5 mol% BHO doped YGBCO film with 4 nm thick self-seed layer had a very high flux pinning force density Fp of 860 GN/m3 for B//c under a 9 T field, and more importantly, the peak of the Fp curve was not observed.

  9. Strong pinning in very fast grown reactive co-evaporated GdBa2Cu3O7 coated conductors

    Directory of Open Access Journals (Sweden)

    J. L. MacManus-Driscoll

    2014-08-01

    Full Text Available We report on compositional tuning to create excellent field-performance of Jc in “self-doped,” GdBa2Cu3O7−y (GdBCO coated conductors grown by ultrafast reactive co-evaporation. In order to give excess liquid and Gd2O3, the overall compositions were all Ba-poor and Cu-rich compared to GdBCO. The precise composition was found to be critical to the current carrying performance. The most copper-rich composition had an optimum self-field Jc of 3.2 MA cm−2. A more Gd-rich composition had the best in-field performance because of the formation of low coherence, splayed Gd2O3 nanoparticles, giving Jc (77 K, 1 T of over 1 MA cm−2 and Jc (77 K, 5 T of over 0.1 MA cm−2.

  10. Magnetic properties of Eu doped BiGdO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Nithya, R., E-mail: nithya@igcar.gov.in; Yadagiri, K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, TN (India); Shukla, Neeraj [UGC-DAE-CSR Kalpakkam Node, Kokilamedu-603 104, TN (India)

    2016-05-23

    Bulk Bismuth Gadolinium Oxide, BiGdO{sub 3} and Eu doped BiGdO{sub 3} compounds were synthesized by the conventional solid state reaction in air. Phase formation of these compounds was tracked using powder X-ray characterization technique since single phase formation was found to be sensitive to thermal treatment parameters such as cooling and heating rates. Analysis of X-ray diffraction patterns revealed cubic structure with Pm-3m symmetry. An antiferromagnetic transition around 3.8 K was observed in the pristine compound whereas doped samples showed paramagnetic nature in the whole measured temperature range.

  11. Effect of Gd substitution on structure and spectroscopic properties of (Lu,Gd)2O3:Eu ceramic scintillator

    Science.gov (United States)

    Cao, Maoqing; Hu, Zewang; Ivanov, Maxim; Dai, Jiawei; Li, Chaoyu; Kou, Huamin; Shi, Yun; Chen, Haohong; Xu, Jiayue; Pan, Yubai; Li, Jiang

    2018-02-01

    In this paper, (Lu1-xGdx)2O3:Eu (x = 0, 0.1, 0.3, 0.5, 0.7, 0.9) ceramics were consolidated by the solid-state reaction method combined with vacuum sintering without sintering aids. We investigated the effect of the varying contents of Gd2O3 on the structure and spectroscopic properties of (Lu1-xGdx)2O3:Eu ceramics. X-ray diffraction (XRD) patterns indicate that proper amount of Gd2O3 can incorporate well with Lu2O3 and form Lu2O3-Gd2O3 solid solution. However, excessive Gd3+-doping in Lu2O3 will lead to the cubic phase transforming into monoclinic even hexagonal phase. The Gd3+ substitution no more than 50% of Lu2O3 enhances the radioluminescence, and reduces the fluorescence lifetime. Transmittance, photoluminescence, and radiation damage of the (Lu1-xGdx)2O3:Eu scintillation ceramics were also studied.

  12. Superconductivity and magnetism in Ir-doped GdFeAsO

    International Nuclear Information System (INIS)

    Cui, Y.J.; Chen, Y.L.; Cheng, C.H.; Yang, Y.; Jiang, J.; Wang, Y.Z.; Zhang, Y.; Zhao, Y.

    2010-01-01

    The 5d-transition metal, Ir has successfully been doped at Fe site and induced superconductivity in GdFeAsO at T c = 18.9 K and ∼20 atom%. The Ir-doping shortened the c-axis length and stretched the a-axis one, which led to enhance the coupling between the FeAs- and SmO-layer, and to weaken the bonding between Fe and As atom. Paramagnetism was observed in all of the samples, which was resulted from the magnetic Gd ion as in the F-doped GdFeAsO. An upper critical field of GdFe 0.8 Ir 0.2 AsO was extrapolated to around 24 T, much smaller than that of F-doped GdFeAsO owing to a relatively low T c and small value of dH c2 /dT.

  13. Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

    Science.gov (United States)

    Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

    2016-03-01

    We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

  14. Mechanisms and selectivity for etching of HfO2 and Si in BCl3 plasmas

    International Nuclear Information System (INIS)

    Wang Chunyu; Donnelly, Vincent M.

    2008-01-01

    The authors have investigated plasma etching of HfO 2 , a high dielectric constant material, and poly-Si in BCl 3 plasmas. Etching rates were measured as a function of substrate temperature (T s ) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO 2 and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T s only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO 2 results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO 2 and Si after etching in BCl 3 plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO 2 and on poly-Si after etching through HfO 2 films. For HfO 2 , a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B 2 O 3 . B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO x Cl y ). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO 2 is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B 3 O 4 Cl

  15. Red emitting phosphors of Eu{sup 3+} doped Na{sub 2}Ln{sub 2}Ti{sub 3}O{sub 10} (Ln = Gd, Y) for white light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Niumiao [National Key Laboratory of Photoelectric Technology and Functional Materials Culture Base in Shaanxi Province, National Photoelectric Technology and Functional Materials & Application of Science and Technology International Cooperation Base, Institute of Photonics & Photon-Technology, Northwest University, Xi’an 710069 (China); Guo, Chongfeng, E-mail: guocf@nwu.edu.cn [National Key Laboratory of Photoelectric Technology and Functional Materials Culture Base in Shaanxi Province, National Photoelectric Technology and Functional Materials & Application of Science and Technology International Cooperation Base, Institute of Photonics & Photon-Technology, Northwest University, Xi’an 710069 (China); Yin, Luqiao; Zhang, Jianhua [Key Laboratory of Advanced Display and System Applications (Shanghai University), Ministry of Education, Shanghai 200072 (China); Wu, Mingmei, E-mail: ceswmm@mail.sysu.edu.cn [School of Chemistry and Chemical Engineering, Sun Yat-Sen University, No. 135, Xingang Xi Road, Guangzhou 510275 (China)

    2015-06-25

    Highlights: • Layered red phosphors Na{sub 2}Ln{sub 2}Ti{sub 3}O{sub 10} (Ln = Gd, Y):Eu{sup 3+} were prepared. • The synthesis parameters of phosphors were optimized. • PL and thermal stability of the samples were investigated. • LED devices were also fabricated including the present red phosphor. - Abstract: A series of Eu{sup 3+} doped Na{sub 2}Ln{sub 2}Ti{sub 3}O{sub 10} (Ln = Gd, Y) red-emitting phosphors for application in ultraviolet based light emitting diodes (LEDs) were successfully synthesized by a modified sol–gel method. Their structure and luminescent properties were characterized by powder X-ray diffraction (XRD), photoluminescence excitation (PLE) and emission (PL) spectra and absorption spectra, according to these results the optimal compositions and synthesis parameters were determined. In addition, the thermal stabilities of the phosphors were investigated according to the temperature-dependent PL spectra. The red and white-LEDs (W-LEDs) comprising the Na{sub 2}Ln{sub 2}Ti{sub 3}O{sub 10}:Eu{sup 3+} (Ln = Gd, Y) red emitting phosphors were fabricated with a near-ultraviolet (n-UV) chip. In comparison with Na{sub 2}Y{sub 1.4}Eu{sub 0.6}Ti{sub 3}O{sub 10}, the Na{sub 2}Gd{sub 0.6}Eu{sub 1.4}Ti{sub 3}O{sub 10} phosphor offers higher brightness, quantum efficiency, and excellent thermal stability. W-LEDs comprising Na{sub 2}Gd{sub 0.6}Eu{sub 1.4}Ti{sub 3}O{sub 10} showed bright white emission with a color rendering index (Ra) of 82, a color temperature of 2151 K, and Commission Internationale de I’Eclairage (CIE) color coordinates of (0.34, 0.37). The phosphor Na{sub 2}Gd{sub 0.6}Eu{sub 1.4}Ti{sub 3}O{sub 10} is more suitable candidate for application in LEDs.

  16. Studies of the hyperfine interaction in semiconducting or isolating oxides on the examples HfO2, Ga2O3, and Al2O3

    International Nuclear Information System (INIS)

    Steffens, Michael

    2014-01-01

    On the example of the three oxide compounds of the hafnium, gallium, and aluminium among others the method of the perturbed γ-γ angular correlation (PAC) was applied in dependence on the sample temperature. Applied were thereby the PAC probe nuclei 111 Cd and 181 Ga, which were inserted in the samples by ion implantation or proced by neutron activation in the samples. In HfO 2 thereby especially the hyperfine interaction of thin layers with thicknesses from 2.7 to 17 nm and 100 nm were studied. Strongly disagreeing field gradients and a great influence of the sample surface on the measurement are shown. It could be shown that ν qO x should scale with the layer thickness of the oxide and that the temperature-dependent behaviour, which is influenced by the thermal expansion of the lattice, underlies also this scaling. Conditioned by the neighbourhood to the surface at high temperature oxygen can escape from the samples and so degrade the oxide. The studied Ga 2 O 3 layers were produced by oxidation of GaN at 1223 K in air. The structure of the oxide layer was thereby stepwise pursued with the PAC and could be modelled with an exponential time dependence. The oxidation was repeated with several samples at equal absolute oxidation time but different partition in intermediate steps. Altogether the result were shown as reproducable, the occuring differences of the hyperfine interactions are probably given by external quantities fluctuating in the oxidation. The measurement of the Al 2 O 3 sample in the PAC furnace and cryostat represents mainly a reproduction of the preceding experiments of Penner et al. In this materials the attempt held the spotlight to manipulate the temperature-dependent behaviour of the hyperfine interaction by additional doping. Over the experiments of the single materials was set the more precise consideration of dynamic hyperfine interactions on the probe nucleus 111 Cd. In the spin-correlation functions R(t) these were manifested by an

  17. Synthesis, characterization and thermal behavior: Gd(NO3)3.6H2O to Gd2O3

    International Nuclear Information System (INIS)

    Ghonge, Darshana K.; Sheelvantra, Smita S.; Kalekar, Bhupesh B.; Raje, Naina

    2015-01-01

    Gadolinium oxide finds its application in nuclear as well as medical industry. It has been prepared from the thermal decomposition of gadolinium nitrate hexahydrate. Surface area of the synthesized compound was measured as 19 m 2 /g. EDS data shows only the presence of gadolinium and oxygen in the synthesized compound with the Gd to O ratio as calculated for Gd 2 O 3 , suggests the formation of pure Gd 2 O 3 . XRD analysis confirms the formation of pure cubic phase Gd 2 O 3 . In the absence of any report on the thermal behavior of GdNH, present studies have been carried out to understand the decomposition mechanism using simultaneous TG - DTA - EGA measurements

  18. Study of Direct-Contact HfO2/Si Interfaces

    Directory of Open Access Journals (Sweden)

    Noriyuki Miyata

    2012-03-01

    Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

  19. Superconductivity and magnetism in Ir-doped GdFeAsO

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Y.J.; Chen, Y.L. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney 2052 NSW (Australia); Yang, Y.; Jiang, J.; Wang, Y.Z.; Zhang, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Y., E-mail: yzhao@swjtu.edu.c [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052 NSW (Australia)

    2010-11-01

    The 5d-transition metal, Ir has successfully been doped at Fe site and induced superconductivity in GdFeAsO at T{sub c} = 18.9 K and {approx}20 atom%. The Ir-doping shortened the c-axis length and stretched the a-axis one, which led to enhance the coupling between the FeAs- and SmO-layer, and to weaken the bonding between Fe and As atom. Paramagnetism was observed in all of the samples, which was resulted from the magnetic Gd ion as in the F-doped GdFeAsO. An upper critical field of GdFe{sub 0.8}Ir{sub 0.2}AsO was extrapolated to around 24 T, much smaller than that of F-doped GdFeAsO owing to a relatively low T{sub c} and small value of dH{sub c2}/dT.

  20. Enhanced flux pinning by BaZrO3 and (Gd,y)2O3 nano-structures in metal organic chemical vapor deposited GdYBCO high temperature superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Y [SuperPower Incorporated, Schenectady, New York; Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York; Paranthaman, Mariappan Parans [ORNL; Cantoni, Claudia [ORNL; Aytug, Tolga [ORNL; Goyal, Amit [ORNL; Lee, Dominic F [ORNL; Specht, Eliot D [ORNL; Zuev, Yuri L [ORNL; Zhang, Yifei [ORNL

    2009-01-01

    We have formed BaZrO3 nano-columns and (Gd,Y)2O3 nano-precipitates in reel-to-reel MOCVD processed (Gd,Y)Ba2Cu3O7-x coated conductors and increased the critical currents (Ic) of the conductors in applied magnetic fields to remarkable levels. A (Gd,Y)Ba2Cu3O7-x tape of 1m length with 6.5% Zr-additions and 30% composition rich in both Gd and Y showed Ic values of 813 A/cm-width at (self-field, 77K) and above 186 A/cm-width at (1T, 77K). The strongly enhanced flux pinning over a wide range of magnetic field orientations can be attributed to the bidirectionally aligned defect structures of BaZrO3 and (Gd,Y)2O3 created by optimized MOCVD conditions.

  1. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

    Science.gov (United States)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-13

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

  2. Coexistence of different charge states in Ta-doped monoclinic HfO2: Theoretical and experimental approaches

    DEFF Research Database (Denmark)

    Taylor, M.A.; Alonso, R.E.; Errico, L.A.

    2010-01-01

    A combination of experiments and ab initio quantum-mechanical calculations has been applied to examine hyperfine interactions in Ta-doped hafnium dioxide. Although the properties of monoclinic HfO2 have been the subject of several earlier studies, some aspects remain open. In particular, time dif...

  3. Phonon modes in Gd1-xCexBa2Cu3O7-δ

    Directory of Open Access Journals (Sweden)

    SH Mozaffari

    2009-08-01

    Full Text Available  XRD and Raman analyses were performed to probe the phase formation and the variation of the normal phonon frequencies of the high temperature superconductor GdBa2Cu3O7-δ upon Ce doping. It was found that in addition to the orthorhombic 123 phase, some nonsuperconducting peaks, which are mainly due to the BaCeO3 secondary phase, are also formed that suppress the superconducting transition temperature. Besides, analysis of the Raman peaks shows that substitutions of Ce for Gd in GdBa2Cu3O7-δ are restricted to low concentrations in favor of impurity island formation .

  4. Solid phase crystallisation of HfO2 thin films

    International Nuclear Information System (INIS)

    Modreanu, M.; Sancho-Parramon, J.; O'Connell, D.; Justice, J.; Durand, O.; Servet, B.

    2005-01-01

    In this paper, we report on the solid phase crystallisation of carbon-free HfO 2 thin films deposited by plasma ion assisted deposition (PIAD). After deposition, the HfO 2 films were annealed in N 2 ambient for 3 h at 350, 550 and 750 deg. C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) were used for the physical characterisation of as-deposited and annealed HfO 2 . XRD has revealed that the as-deposited HfO 2 film is in an amorphous-like state with only traces of crystalline phase and that the annealed films are in a highly crystalline state. These results are in good agreement with the SE results showing an increase of refractive index by increasing the annealing temperature. XRR results show a significant density gradient over the as-deposited film thickness, which is characteristic of the PIAD method. The AFM measurements show that the HfO 2 layers have a smooth surface even after annealing at 750 deg. C. The present study demonstrates that the solid phase crystallisation of HfO 2 PIAD thin films starts at a temperature as low as 550 deg. C

  5. Luminescence thermometry with Eu{sup 3+} doped GdAlO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Lojpur, Vesna, E-mail: vesna.lojpur@yahoo.com; Ćulubrk, Sanja; Medić, Mina; Dramicanin, Miroslav

    2016-02-15

    Eu{sup 3+} doped GdAlO{sub 3} powder synthesized by solid state reaction was investigated for application in luminescence thermometry. Phase composition of material was confirmed by X-ray powder diffraction analysis. The photoluminescence emission spectra were collected under excitation of 399 nm, while elevating the temperature of the sample from the room temperature to 793 K. Emissions from {sup 5}D{sub 1}→{sup 7}F{sub 1} and {sup 5}D{sub 0}→{sup 7}F{sub 2} characteristic transitions of Eu{sup 3+} ions are selected for the temperature-dependence study using the fluorescence intensity ratio method. Emission decay curves measured at the strongest emission peak centered at 614 nm were recorded in a same temperature range. Data analysis showed that thermometry by fluorescence intensity ratio method can be used over the temperature region 293–793 K with the maximal relative sensitivity of 2.96% K{sup −1} (at 293 K). Temporal dependence of emission (lifetime) provides temperature sensing from 620 to 793 K with the maximal relative sensitivity of 2.28% K{sup −1}. - Highlights: • GdAlO{sub 3}: 4 at% of Eu{sup 3+} can be used for luminescence thermometry in the 293–793 K range. • Combined FIR and lifetime thermometry provide >0.5% K{sup −1} relative sensitivity. • Temperature dependence of lifetime is well described energy gap law model.

  6. Polarized spectroscopic properties of Er{sup 3+}:Gd{sub 2}SiO{sub 5} crystal and evaluation of Er{sup 3+}:Yb{sup 3+}:Gd{sub 2}SiO{sub 5} crystal as a 1.55 μm laser medium

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H. [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Huang, J.H.; Gong, X.H.; Chen, Y.J.; Lin, Y.F.; Luo, Z.D. [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Huang, Y.D., E-mail: huyd@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

    2016-10-01

    An Er{sup 3+}-doped Gd{sub 2}SiO{sub 5} single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Intensity parameters, spontaneous emission probabilities, fluorescence branching ratios, and radiative lifetimes were estimated on the basis of the Judd–Ofelt theory. Besides, potentiality of 1.55 μm laser emission in an Er{sup 3+}–Yb{sup 3+} co-doped Gd{sub 2}SiO{sub 5} crystal was evaluated.

  7. Magnetic nanoparticles induced dielectric enhancement in (La, Gd)2O3: SiO2 composite systems

    Science.gov (United States)

    Kao, T. H.; Mukherjee, S.; Yang, H. D.

    2013-11-01

    Magnetic Gd2O3 and non-magnetic La2O3 nanoparticles (NPs) have been synthesized together with different doping concentrations in SiO2 matrix via sol-gel route calcination at 700 °C and above. Properly annealed NP-glass composite systems show enhancement of dielectric constant and magnetodielectric effect (MDE) near room temperature, depending on superparamagnetic NPs concentrations. From application point of view, the enhancement of dielectric constant along with MDE can be achieved by tuning the NPs size through varying calcination temperature and/or increasing the doping concentration of magnetic rare earth oxide.

  8. Magnetocaloric effect in gadolinium-oxalate framework Gd2(C2O4)3(H2O)6⋅(0⋅6H2O)

    International Nuclear Information System (INIS)

    Sibille, Romain; Didelot, Emilie; Mazet, Thomas; Malaman, Bernard; François, Michel

    2014-01-01

    Magnetic refrigerants incorporating Gd 3+ ions and light organic ligands offer a good balance between isolation of the magnetic centers and their density. We synthesized the framework material Gd 2 (C 2 O 4 ) 3 (H 2 O) 6 ⋅0.6H 2 O by a hydrothermal route and characterized its structure. The honeycomb lattice of Gd 3+ ions interlinked by oxalate ligands in the (a,c) plane ensures their decoupling in terms of magnetic exchange interactions. This is corroborated by magnetic measurements indicating negligible interactions between the Gd 3+ ions in this material. The magnetocaloric effect was evaluated from isothermal magnetization measurements. The maximum entropy change −ΔS M max reaches 75.9 mJ cm −3 K −1 (around 2 K) for a moderate field change (2 T)

  9. Characterization and luminescent properties of Eu{sup 3+} doped Gd{sub 2}Zr{sub 2}O{sub 7} nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Rabasovic, M.S., E-mail: majap@ipb.ac.rs [Institute of Physics, University of Belgrade (Serbia); Sevic, D. [Institute of Physics, University of Belgrade (Serbia); Krizan, J. [Faculty for Mechanical Engineering, University of Ljubljana (Slovenia); Terzic, M. [Faculty of Science, University of Novi Sad (Serbia); Mozina, J. [Faculty for Mechanical Engineering, University of Ljubljana (Slovenia); Marinkovic, B.P.; Savic-Sevic, S. [Institute of Physics, University of Belgrade (Serbia); Mitric, M. [Vinča Institute of Nuclear Science, University of Belgrade, P.O. Box 522, 11001 Belgrade (Serbia); Rabasovic, M.D.; Romcevic, N. [Institute of Physics, University of Belgrade (Serbia)

    2015-02-15

    Highlights: • Nanopowders Gd{sub 2}Zr{sub 2}O{sub 7} doped by europium ions (Eu{sup 3+}) have been synthesized. • Their luminescence properties have been measured at room temperature. • The temporal evolution of laser induced phenomena are presented using time-resolved technique. • Lifetime analysis for luminescence bands in emission spectra has been done. - Abstract: Nanopowders based on gadolinium zirconium oxide (Gd{sub 2}Zr{sub 2}O{sub 7}) doped by europium ions (Eu{sup 3+}) were successfully prepared using a flame combustion method. This material is suitable for various optical devices. The structure of prepared materials has been confirmed and characterized using X-ray powder diffraction (XRD), scanning electron microscope (SEM) and photoluminescence (PL) techniques. The luminescence properties of synthesized nanopowders were characterized by emission spectra and luminescence lifetimes by using the streak camera system. PL spectra were obtained at three different excitation wavelengths (Optical Parametric Oscilator (OPO) at 360 nm, laser diode at 365 nm and Ar laser line at 514.5 nm). The strong emission lines at 611 nm and 630 nm corresponding to the {sup 5}D{sub 0} → {sup 7}F{sub 2} long lived transition could be used as a new red light source in optical devices.

  10. Mechanism of luminescent enhancement in Ba{sub 2}GdNbO{sub 6}:Eu{sup 3+} perovskite by Li{sup +} co-doping

    Energy Technology Data Exchange (ETDEWEB)

    Rezende, Marcos Vinicius dos Santos [Departamento de Física, Universidade Federal de Sergipe, 49500-000, Itabaiana, SE (Brazil); Valério, Mario Ernesto Giroldo [Departamento de Física, Universidade Federal de Sergipe, 49100-000 São Cristóvão, SE (Brazil); Mouta, Rodolpho; Diniz, Eduardo Moraes [Departamento de Física, CCET, Universidade Federal do Maranhão, 65085-580 São Luís, MA (Brazil); Paschoal, Carlos William de Araujo, E-mail: paschoal@ufma.br [Departamento de Física, CCET, Universidade Federal do Maranhão, 65085-580 São Luís, MA (Brazil); Department of Materials Science and Engineering, University of California Berkeley, 94720-1760 Berkeley, CA (United States); Department of Physics, University of California Berkeley, 94720-7300 Berkeley, CA (United States)

    2015-02-15

    We investigated the Li{sup +} ion incorporation in Ba{sub 2}GdNbO{sub 6}:Eu{sup 3+} perovskite by atomistic simulations based on energy minimization. We predicted the most probable sites occupied by Eu{sup 3+} and Li{sup +} ions and the related charge-compensation mechanisms involved into these substitutions. The results show that the Eu{sup 3+} and Li{sup +} ions are incorporated mainly at the Gd{sup 3+} site. In the Li{sup +} ion case, there is a charge compensation by Nb{sub Gd}{sup •} {sup •} antisite. The crystal field parameters and the transition levels for the Eu{sup 3+} ion in the BGN:Eu{sup 3+} were calculated with basis on the simulated local symmetry of the Eu{sup 3+} site. The results show that the mechanism of luminescent properties enhancement is the symmetry distortion induced by the Li{sup +} co-doping. - Highlights: • We performed a full defect calculations in Ba{sub 2}GdNbO{sub 6} double perovskite. • We modeled with excellent agreement the optical transition of Ba{sub 2}GdNbO{sub 6}:Eu{sup 3+} crystal. • We explained the mechanism of luminescent enhancement in Ba{sub 2}GdNbO{sub 6}:Eu{sup 3+} perovskite by Li{sup +} co-doping.

  11. High temperature-induced phase transitions in Sr2GdRuO6 complex perovskite

    International Nuclear Information System (INIS)

    Triana, C.A.; Corredor, L.T.; Landínez Téllez, D.A.; Roa-Rojas, J.

    2011-01-01

    Highlights: ► Crystal structure, thermal expansion and phase transitions at high-temperature of Sr 2 GdRuO 6 perovskite has been investigated. ► X-ray diffraction pattern at 298 K of Sr 2 GdRuO 6 corresponds to monoclinic perovskite-type structure with P2 1 /n space group. ► Evolution of X-ray diffraction patterns at high-temperature shows that the Sr 2 GdRuO 6 perovskite suffers two-phase transitions. ► At 573 K the X-ray diffraction pattern of Sr 2 GdRuO 6 corresponds to monoclinic perovskite-type structure with I2/m space group. ► At 1273 K the Sr 2 GdRuO 6 perovskite suffers a complete phase-transition from monoclinic I2/m (no. 12) to tetragonal I4/m (no. 87). -- Abstract: The crystal structure behavior of the Sr 2 GdRuO 6 complex perovskite at high-temperature has been investigated over a wide temperature range between 298 K ≤ T ≤ 1273 K. Measurements of X-ray diffraction at room-temperature and Rietveld analysis of the experimental patterns show that this compound crystallizes in a monoclinic perovskite-like structure, which belongs to the P2 1 /n (no. 14) space group and 1:1 ordered arrangement of Ru 5+ and Gd 3+ cations over the six-coordinate M sites. Experimental lattice parameters were obtained to be a =5.8103(5) Å, b =5.8234(1) Å, c =8.2193(9) Å, V = 278.11(2) Å 3 and angle β = 90.310(5)°. The high-temperature analysis shows the occurrence of two-phase transitions on this material. First, at 573 K it adopts a monoclinic perovskite-type structure with I2/m (no. 12) space group with lattice parameters a = 5.8275(6) Å, b = 5.8326(3) Å, c = 8.2449(2) Å, V = 280.31(3) Å 3 and angle β = 90.251(3)°. Close to 1273 K it undergoes a complete phase-transition from monoclinic I2/m (no. 12) to tetragonal I4/m (no. 87), with lattice parameters a = 5.8726(1) Å, c = 8.3051(4) Å, V = 286.39(8) Å 3 and angle β = 90.0°. The high-temperature phase transition from monoclinic I2/m (no. 12) to tetragonal I4/m (no. 87) is characterized

  12. Oxygen nonstoichiometry and defects in Mn-doped Gd2Ti2O7+x

    International Nuclear Information System (INIS)

    Porat, O.; Tuller, H.L.

    1996-01-01

    The oxygen nonstoichiometry in Mn-doped Gd 2 Ti 2 O 7 , Gd 2 (Ti 0.975 Mn 0.025 ) 2 O 7+x , was measured electrochemically, as a function of temperature and oxygen partial pressure, with the aid of an oxygen titration cell. The analysis of the data shows that the defect equilibrium can be described by considering the dominant point defects to be neutral oxygen interstitials, doubly charged oxygen vacancies, and trivalent and quadrivalent Mn ions substituted in the Ti sites. The enthalpies for the formation of neutral oxygen interstitials and trivalent Mn are determined

  13. High performance GdBa{sub 2}Cu{sub 3}O{sub 7-z} film preparation by non-fluorine chemical solution deposition approach

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.T.; Pu, M.H.; Wang, W.W. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, H. [Department of Physics, Peking University, Beijing 100871 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia); Zhao, Y., E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia)

    2011-11-15

    Biaxially textured GdBa{sub 2}Cu{sub 3}O{sub 7}-z films with Tc above 93 K have been prepared on (0 0 l) by non-fluorine CSD approach. Nanoparticles with homogeneous distribution are introduced into the GdBCO films as effective pinning centers. A high Jc (77 K, 0 T) of 2.28 MA/cm{sup 2} with slow decreasing Jc-B behavior is observed in the films. Biaxially textured GdBa{sub 2}Cu{sub 3}O{sub 7-z} (GdBCO) films with T{sub c} above 93 K have been prepared on (0 0 l) LaAlO{sub 3} substrate by self-developed non-fluorine polymer-assisted chemical solution deposition (PA-CSD) approach. The GdBCO films show smooth and crack-free morphology. Many nanoscale particles with homogeneous distribution are observed in the GdBCO films, which have not been observed yet in the YBa{sub 2}Cu{sub 3}O{sub 7-z} (YBCO) films prepared by the same processing technique. Besides a high J{sub c} (77 K, 0 T) of 2.28 MA/cm{sup 2}, the optimized GdBCO films show a better J{sub c}-B behavior and an improved high-field J{sub c}, compared to the YBCO films.

  14. Al2O3 doped TiO2 ceramic waste forms

    International Nuclear Information System (INIS)

    Uno, Masayoshi; Kinoshita, Hajime; Sakai, Etsuro; Ikeda, Akira; Matsumoto, Y.; Yamanaka, Shinsuke

    1999-01-01

    Melting of the mixture of Nd 2 O 3 , CeO 2 , SrO, TiO 2 and Al 2 O 3 at 1673 K for 1 hour produced one RE 2 Ti 3 O 9 phase compound. Differential Scanning Calorimetry (DSC) measurement showed that the melting temperature of this compound was 1646 K. Density of the alumina doped oxide was higher than that of the oxide obtained by the pressing and sintering without alumina. Vickers hardness of the oxide obtained by the pressing and sintering was 5.3 GPa and nearly same as that of glass waste. That of the alumina doped oxide was around 7 GPa. 7 days Soxhlet leach test (MCC-5) followed by Inductively Coupled Plasma Spectrometry (ICP) showed that normalized leaching rate of Ti for the oxide obtained by the pressing and sintering was 5.54 x 10 -3 kg/m 2 and that for the alumina doped oxide was 2.24 x 10 -3 kg/m 2 . The value of Sr for the pressed and sintered sample was 0.034 x 10 -3 kg/m 2 but that for alumina doped sample was below the detection limit (0.01 x 10 -3 kg/m 2 ). Al was not detected from the leachate of the alumina doped sample. (author)

  15. Identification of ε-Fe{sub 2}O{sub 3} nano-phase in borate glasses doped with Fe and Gd

    Energy Technology Data Exchange (ETDEWEB)

    Ivanova, O.S.; Ivantsov, R.D. [L.V. Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk (Russian Federation); Edelman, I.S., E-mail: ise@iph.krasn.ru [L.V. Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk (Russian Federation); Petrakovskaja, E.A. [L.V. Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk (Russian Federation); Velikanov, D.A. [L.V. Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk (Russian Federation); Siberian Federal University, 660036 Krasnoyarsk (Russian Federation); Zubavichus, Y.V. [NRC “Kurchatov Institute”, 123182 Moscow (Russian Federation); Zaikovskii, V.I. [Boreskov Institute of Catalysis, Siberian Branch of RAS, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Stepanov, S.A. [Vavilov State Optical Institute, All-Russia Research Center, 192371 Petersburg (Russian Federation)

    2016-03-01

    A new type of magnetic nanoparticles was revealed in borate glasses co-doped with low contents of iron and gadolinium. Structure and magnetic properties of the particles differ essentially from that of the α-Fe{sub 2}O{sub 3}, γ-Fe{sub 2}O{sub 3}, or Fe{sub 3}O{sub 4} nanoparticles which were detected earlier in similar glass matrices. Transmission electron microscopy including STEM-HAADF and EDX, synchrotron radiation-based XRD, static magnetic measurements, magnetic circular dichroism, and electron magnetic resonance studies allow referring the nanoparticles to the iron oxide phase-ε-Fe{sub 2}O{sub 3}. Analysis of the data set has shown that it is Gd atoms that govern the process of nanoparticles’ nucleation and its incorporation into the particles in different proportions can be used to adjust their magnetic and magneto-optical characteristics. - Highlights: • Alumina-potassium-borate glasses co-doped with Fe and Gd are studied. • Magnetic nanoparticles with structure close to ε-Fe{sub 2}O{sub 3} are shown to arise in glasses • Magnetic hysteresis loops and EMR evidence on the ferromagnetic and paramagnetic nano-phases coexistence. • Magnetic circular dichroism for ε-Fe{sub 2}O{sub 3} is studied for the first time.

  16. Photoluminescence and scintillation properties of Ce-doped Sr2(Gd1-xLux)8(SiO4)6O2 (x = 0.1, 0.2, 0.4, 0.5, 0.6) crystals

    Science.gov (United States)

    Igashira, Takuya; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

    2018-05-01

    Apatite crystals with chemical compositions of 0.5% Ce-doped Sr2(Gd1-xLux)8(SiO4)6O2 (x = 0.1, 0.2, 0.4, 0.5, 0.6) were synthesized by the Floating Zone method, and then we evaluated their photoluminescence (PL) and scintillation properties. All the Ce-doped samples exhibited PL and scintillation with an intense broad emission in 400-550 nm in which the origin was attributed to the 5d-4f transition of Ce3+, and the emission peak became broader with increasing the concentration of Lu3+. Both PL and scintillation decay time profiles were best-approximated by a sum of two exponential decay functions, and the origin of slower component was attributed to the 5d-4f transition of Ce3+. In the X-ray induced afterglow measurements, the Ce-doped Sr2(Gd0.4Lu0.6)8(SiO4)6O2 sample exhibited the lowest afterglow level. Furthermore, the Ce-doped Sr2(Gd0.5Lu0.5)8(SiO4)6O2 and Sr2(Gd0.4Lu0.6)8(SiO4)6O2 samples showed a clear full energy deposited peak under 5.5 MeV 241Am α-ray irradiation, and the estimated absolute scintillation light yields were around 290 and 1300 ph/5.5 MeV-α, respectively.

  17. Doping effects on the structural, magnetic, and hyperfine properties of Gd-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Coelho-Júnior, H.; Aquino, J. C. R.; Aragón, F. H. [Universidade de Brasília, Núcleo de Física Aplicada, Instituto de Física (Brazil); Hidalgo, P. [Universidade de Brasília, Faculdade Gama-FGA, Setor Central Gama (Brazil); Cohen, R.; Nagamine, L. C. C. M. [Universidade de São Paulo, Instituto de Física (Brazil); Coaquira, J. A. H., E-mail: coaquira@unb.br; Silva, S. W. da [Universidade de Brasília, Núcleo de Física Aplicada, Instituto de Física (Brazil); Brito, H. F. [Universidade de São Paulo, Instituto de Química (Brazil)

    2014-12-15

    In this work we present the study of the structural, magnetic, and hyperfine properties of Gd-doped SnO{sub 2} nanoparticles synthesized by a polymer precursor method. The X-ray diffraction data analysis shows the formation of the rutile-type structure in all samples with Gd content from 1.0 to 10.0 mol%. The mean crystallite size is ∼11 nm for the 1.0 mol% Gd-doped samples and it shows a decreasing tendency as the Gd content is increased. The analysis of magnetic measurements indicates the coexistence of ferromagnetic and paramagnetic phases for the 1.0 mol% Gd-doped sample; however, above that content, only a paramagnetic phase is observed. The ferromagnetic phase observed in the 1.0 mol% Gd-doped sample has been assigned to the presence of bound magnetic polarons which overlap to create a spin-split impurity band. Room-temperature {sup 119}Sn Mössbauer measurements reveal the occurrence of strong electric quadrupole interactions. It has been determined that the absence of magnetic interactions even for 1.0 mol% Gd-doped sample has been related to the weak magnetic field associated to the exchange interaction between magnetic ions and the donor impurity band. The broad distribution of electric quadrupole interactions are attributed to the several non-equivalent surroundings of Sn{sup 4+} ions provoked by the entrance of Gd{sup 3+} ions and to the likely presence of Sn{sup 2+} ions. The isomer shift seems to be nearly independent of the Gd content for samples with Gd content below 7.5 mol%.

  18. Effect of high pressure sintering and annealing on microstructure and thermoelectric properties of nanocrystalline Bi2Te2.7Se0.3 doped with Gd

    Institute of Scientific and Technical Information of China (English)

    Ping Zou; Guiying Xun; Song Wang; Penglei Chen; Fengzhu Huang

    2014-01-01

    Bi2Te2.7Se0.3 of high performance doped with Gd bulk materials was prepared by a high pressure (6.0 GPa) sintering (HPS) method at 593 K, 633 K, 673 K and 693 K. The sample was then annealed for 36 h in a vacuum at 633 K. The phase composition, crystal structure and morphology of the sample were analyzed by X-ray diffraction and scanning electron microscopy. The electric conductivity, Seebeck coefficient, and thermal conductivity aspects of the sample were measured from 298 K to 473 K. The results show that high pressure sintering and the doping with Gd has a great effect on the crystal structure and the thermoelectric properties of the samples. The samples are consisted of nanoparticles before and after annealing, and these nanostructures have good stability at high temperature. HPS together with annealing can improve the TE properties of the sample by decreasing the thermal conductivity of the sample with nanostructures. The maximum ZT value of 0.74 was obtained at 423 K for the sample, which was sintered at 673 K and then annealed at 633 K for 36 h. Compared with the zone melting sample, it was increased by 85%at 423 K. Hence the temperature of the maximum of figure of merit was increased. The results can be applied to the field of thermoelectric power generation materials.

  19. Pressure-induced phase transformation of HfO2

    International Nuclear Information System (INIS)

    Arashi, H.

    1992-01-01

    This paper reports on the pressure dependence of the Raman spectra of HfO 2 that was measured by a micro-Raman technique using a single-crystal specimen in the pressure range from 0 to 10 GPa at room temperature. The symmetry assignment of Raman bands of the monoclinic phase was experimentally accomplished from the polarization measurements for the single crystal. With increased pressure, a phase transformation for the monoclinic phase took place at 4.3 ± 0.3 GPa. Nineteen Raman bands were observed for the high-pressure phase. The spectral structure of the Raman bands for the high-pressure phase was similar with those reported previously for ZrO 2 . The space group for the high pressure phase of HfO 2 was determined as Pbcm, which was the same as that of the high-pressure phase for ZrO 2 on the basis of the number and the spectral structure of the Raman bands

  20. Upconversion properties of Er3+/Yb3+ co-doped TeO2-TiO2-K2O glasses.

    Science.gov (United States)

    Su, Fangning; Deng, Zaide

    2006-01-01

    The Er3+/Yb3+ co-doped TeO2-TiO2-K2O glasses were prepared by conventional melting procedures, and their upconversion spectra were performed. The dependence of luminescence intensity on the ratio of Yb3+/Er3+ was studied, and the relationship between green upconversion luminescence intensity and Er3+ concentration is discussed in detail. The 546 nm green upconversion luminescence intensity is optimised in the studied glasses either when the Yb3+/Er3+ ratio is 25/1 and Er3+ concentration is 0.1 mol%, or when the Yb3+/Er3+ ratio is 10/1 and Er3+ concentration is 0.15 mol%. These glasses could be one of the potential candidates for LD pumping microchip solid-state lasers.

  1. Synthesis and characterization of physical properties of Gd{sub 2}O{sub 2}S:Pr{sup 3+} semi-nanoflower phosphor

    Energy Technology Data Exchange (ETDEWEB)

    Bagheri, A.; Rezaee Ebrahim Saraee, Kh.; Shakur, H.R. [University of Isfahan, Department of Nuclear Engineering, Faculty of Advance Sciences and Technologies, Isfahan (Iran, Islamic Republic of); Zamani Zeinali, H. [Nuclear Science and Technology Research Institute, Agriculture, Medical and Industrial Research School, Karaj (Iran, Islamic Republic of)

    2016-05-15

    Pure gadolinium oxysulfide phosphor (Gd{sub 2}O{sub 2}S) and trivalent praseodymium-doped gadolinium oxysulfide phosphor (Gd{sub 2}O{sub 2}S:Pr{sup 3+}) scintillators with semi-nanoflower crystalline structures were successfully synthesized through a precipitation method and subsequent calcination treatment as a converter for X-ray imaging detectors. The characterization such as the crystal structures and nanostructure of Gd{sub 2}O{sub 2}S:Pr{sup 3+} scintillator measured by XRD and FeE-SEM experiment. The optical properties of Gd{sub 2}O{sub 2}S:Pr{sup 3+} scintillator were studied. Luminescence spectra of Gd{sub 2}O{sub 2}S:Pr{sup 3+} under 320 nm UV excitation show a green emission at near 511 nm corresponding to the {sup 3}P{sub 0}-{sup 3}H{sub 4} of Pr ions. After scintillation properties of synthesized Gd{sub 2}O{sub 2}S:Pr{sup 3+} scintillator investigated, Gd{sub 2}O{sub 2}S:Pr{sup 3+} scintillating film fabricated on a glass substrate by a sedimentation method. X-ray imaging of the fabricated scintillators confirmed that the Gd{sub 2}O{sub 2}S:Pr{sup 3+} scintillator could be used for radiography applications in which good spatial resolution is needed. (orig.)

  2. Thermoluminescence in films of HfO2:Dy+3

    International Nuclear Information System (INIS)

    Ceron, P.; Rivera, T.; Guzman, J.; Montes, E.; Pelaez, A.; Rojas, B.; Guzman, D.; Azorin, J.; Paredes, L.

    2014-08-01

    In this work the thermoluminescence (TL) response of films of hafnium oxide polluted with dysprosium (HfO 2 :Dy +3 ) that were irradiated in the near UV (200 nm - 400 nm). The films were deposited by means of the ultrasonics spray pyrolysis technique on a glass substrate, using different deposit temperatures (300 grades C - 600 grades C). The best TL emission corresponded to the prepared film to 450 grades C that was exposed to a spectral irradiation of 80 μJ/(cm 2 -s) with a wave longitude of 240 nm. The TL response in function of the spectral irradiation was lineal in the studied interval (24 to 288 mJ/cm 2 ), several kinetic parameters were also calculated of the shine curve as depth of the trap (E), frequency factor (s) and order to the kinetics (b). The obtained results show that the films of HfO 2 :Dy +3 could be used as radiation monitor in the region of the near UV. (Author)

  3. Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2014-03-01

    In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO2 and La2O3 on In0.53Ga0.47As for MOS device application. Both multilayer HfO2 (0.8 nm)/La2O3 (0.8 nm)/In0.53Ga0.47As and La2O3 (0.8 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41 nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8% and an excellent Dit of 7.0 × 1011 cm-2·eV-1 can be achieved using multiple layers of La2O3 (0.8 nm) and HfO2 (0.8 nm) on the In0.53Ga0.47As MOS capacitor with optimum thermal treatment and layer thickness.

  4. Structural, spectroscopic, and tunable laser properties of Yb3+ -doped NaGd(WO4)2

    Science.gov (United States)

    Cascales, C.; Serrano, M. D.; Esteban-Betegón, F.; Zaldo, C.; Peters, R.; Petermann, K.; Huber, G.; Ackermann, L.; Rytz, D.; Dupré, C.; Rico, M.; Liu, J.; Griebner, U.; Petrov, V.

    2006-11-01

    Single crystals of Yb3+ -doped NaGd(WO4)2 with up to 20mol% ytterbium content have been grown by the Czochralski technique in air or in N2+O2 atmosphere and cooled to room temperature at different rates (4-250°C/h) . Only the noncentrosymmetric tetragonal space group I4¯ accounts for all reflections observed in the single crystal x-ray diffraction analysis. The distortion of this symmetry with respect to the centrosymmetric tetragonal space group I41/a is much lower for crystals cooled at a fast rate. Na+ , Gd3+ , and Yb3+ ions share the two nonequivalent 2b and 2d sites of the I4¯ structure, but Yb3+ (and Gd3+ ) ions are found preferentially in the 2b site. Optical spectroscopy at low (5K) temperature provides additional evidence of the existence of these two sites contributing to the line broadening. The comparison with the F7/22(n) and F5/22(n') Stark energy levels calculated using the crystallographic Yb-O bond distances allows to correlate the experimental optical bands with the 2b and 2d sites. As a novel uniaxial laser host for Yb3+ , NaGd(WO4)2 is characterized also with respect to its transparency, band-edge, refractive indices, and main optical phonons. Continuous-wave Yb3+ -laser operation is studied at room temperature both under Ti:sapphire and diode laser pumping. A maximum slope efficiency of 77% with respect to the absorbed power is achieved for the π polarization by Ti:sapphire laser pumping in a three-mirror cavity with Brewster geometry. The emission is tunable in the 1014-1079nm spectral range with an intracavity Lyot filter. Passive mode locking of this laser produces 120fs long pulses at 1037.5nm with an average power of 360mW at ≈97MHz repetition rate. Using uncoated samples of Yb:NaGd(WO4)2 at normal incidence in simple two-mirror cavities, output powers as high as 1.45W and slope efficiencies as high as 51% are achieved with different diode laser pump sources.

  5. Blue and green emitting Ce3+ and Tb3+ codoped Gd2O3 nanophosphors

    International Nuclear Information System (INIS)

    Loitongbam, Romeo Singh; Singh, W. Rameshwor

    2013-01-01

    Tb 3+ doped Gd 2 O 3 nanoparticles of 4-10 nm in size were synthesized from nitrate precursors by urea hydrolysis method in ethylene glycol medium at low temperature of 140 ℃. Characteristic Tb 3+ ion green emission corresponding to 5 D 4 ’! 7 F J was observed to be very strong, which further increases with heat treatment temperature. Characteristic blue color emission of Ce 3+ ion transitions for 5 d’! 2 F 7/2 and 2 F 5/2 (at 422 nm and 485 nm respectively) was found to be very strong in as-synthesized Ce 0.06 Tb 0.14 Gd 0.8 O 3 nanoparticles. However, its luminescence intensity decreases with increase in heating temperature or increase in the particle size/crystallinity, whereas there was a weak emission peak of Tb 3+ ion at 545 nm. The polycrystalline nature of as-prepared sample change to highly crystalline state when heated at elevated temperature (900 ℃). (author)

  6. Effect of Gd"3"+ substitution on structural, magnetic, dielectric and optical properties of nanocrystalline CoFe_2O_4

    International Nuclear Information System (INIS)

    Joshi, Seema; Kumar, Manoj; Chhoker, Sandeep; Kumar, Arun; Singh, Mahavir

    2017-01-01

    Nanoparticles of CoGd_xFe_2_−_xO_4 with x=0.0, 0.03, 0.05, 0.07, 0.10 and 0.15 were synthesized by co-precipitation method. Gd"3"+ substitution effect on different properties of nanocrystalline CoFe_2O_4 has been studied. X-ray diffraction and Raman spectroscopy confirmed the formation of single phase cubic mixed spinel structure. Cation distribution has been proposed from Rietveld refined data. Mössbauer spectra at room temperature showed two ferrimagnetic Zeeman sextets with one superparamagnetic doublet. Mössbauer parameters suggested that Gd"3"+ ions occupy the octahedral site in CoFe_2O_4. Room temperature magnetic measurements exhibited that the saturation magnetization decreased from 91 emu/gm to 54 emu/gm for x=0.0 to 0.15 samples. The coercivity decreased from 1120 Oe to 340 Oe for x=0.0 to 0.07 samples and increased from 400 Oe to 590 Oe for x=0.10 and 0.15 samples, respectively. Raman analysis showed that the degree of inversion with Gd"3"+ substitution supporting the variation of coercivity. Electron spin resonance spectra revealed the dominancy of superexchange interactions in these samples. Optical band gap measurement suggested that all samples are indirect band gap materials and band gap has been decreased with Gd"3"+ substitution. Both dielectric constant and dielectric loss is found to decrease because of the decrease in hopping rate with the Gd"3"+ substitution for Fe"3"+ at the octahedral sites. Low dielectric loss suggested the applicability of Gd"3"+ doped CoFe_2O_4 nanoparticles for high frequency microwave device applications. - Highlights: • Gd"3"+ ions were successfully added in to the spinel lattice of CoFe_2O_4. • Magnetic hysteresis loss is influenced by Gd"3"+ doping. • All doped samples exhibit normal dielectric dispersion behaviour of spinel ferrites. • UV–vis diffuse spectroscopy concludes band gap is reduced by Gd"3"+ doping.

  7. Phase formation and UV luminescence of Gd{sup 3+} doped perovskite-type YScO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Yuhei; Ueda, Kazushige, E-mail: kueda@che.kyutech.ac.jp

    2016-10-15

    Synthesis of pure and Gd{sup 3+}doped perovskite-type YScO{sub 3} was attempted by a polymerized complex (PC) method and solid state reaction (SSR) method. Crystalline phases and UV luminescence of samples were examined with varying heating temperatures. The perovskite-type single phase was not simply formed in the SSR method, as reported in some literatures, and two cubic C-type phases of starting oxide materials remained forming slightly mixed solid solutions. UV luminescence of Gd{sup 3+} doped samples increased with an increase in heating temperatures and volume of the perovskite-type phase. In contrast, a non-crystalline precursor was crystallized to a single C-type phase at 800 °C in the PC method forming a completely mixed solid solution. Then, the phase of perovskite-type YScO{sub 3} formed at 1200 °C and its single phase was obtained at 1400 °C. It was revealed that high homogeneousness of cations was essential to generate the single perovskite-phase of YScO{sub 3}. Because Gd{sup 3+} ions were also dissolved into the single C-type phase in Gd{sup 3+} doped samples, intense UV luminescence was observed above 800 °C in both C-type phase and perovskite-type phase. - Graphical abstract: A pure perovskite-type YScO{sub 3} phase was successfully synthesized by a polymerized complex (PC) method. The perovskite-type YScO{sub 3} was generated through a solid solution of C-type (Y{sub 0.5}Sc{sub 0.5}){sub 2}O{sub 3} with drastic change of morphology. The PC method enabled a preparation of the single phase of the perovskite-type YScO{sub 3} at lower temperature and in shorter heating time. Gd{sup 3+} doped perovskite-type YScO{sub 3} was found to show a strong sharp UV emission at 314 nm. - Highlights: • Pure YScO{sub 3} phase was successfully synthesized by polymerized complex (PC) method. • Pure perovskite-type YScO{sub 3} phase was generated from pure C-type (Y{sub 0.5}Sc{sub 0.5}){sub 2}O{sub 3} one. • YScO{sub 3} was obtained at lower temperature and

  8. Growth and scintillation properties of Ce{sup 3+}-doped (Y{sub 1-x}Gd{sub x})AlO{sub 3} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, Yutaka; Wakahara, Shingo; Suzuki, Shotaro; Kurosawa, Shunsuke [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yoshikawa, Akira [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2012-12-15

    The optical and scintillation properties of 0.5% fixed Ce-doped (Y{sub 1-x}Gd{sub x})AlO{sub 3} single crystals have been investigated at three different levels of Gd doping: x = 0.2, 0.4 and 0.6. Single crystal of the Ce{sup 3+}-doped (Y{sub 0.8}Gd{sub 0.2})AlO{sub 3}, (Y{sub 0.6}Gd{sub 0.4})AlO{sub 3} and (Y{sub 0.4}Gd{sub 0.6})AlO{sub 3} were successfully grown by {mu}-PD technique in nitrogen atmosphere. From X-ray diffraction analysis, no impurity phase was detected for the grown Ce-doped crystals. Ce-doped (Y{sub 0.6}Gd{sub 0.4})AlO{sub 3} crystal demonstrated highest fluorescence quantum efficiency ({proportional_to} 25%) with improvement of excitation efficiency due to the Gd-doping. When irradiated by the alpha-rays from a {sup 241}Am source, all the Ce-doped crystals showed luminescence band that corresponding to 5d (t{sub 2g})-4f transition of Ce{sup 3+}. The scintillation decay time was characterized by two components; the fast component (5-15 ns) is ascribed to 5d-4f transition of Ce{sup 3+}, while the slow one (100-200 ns) may be related to energy transfer between Ce{sup 3+} and Gd{sup 3+} ion. According to the result of {sup 137}Cs gamma-ray irradiated pulse height spectra compared with BGO scintillator, the relative scintillation light output was found to be about 12200 {+-} 1220 (Gd 20%) and 16000 {+-} 1600 (Gd 40%) ph/MeV. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Magnetism and superconductivity in Ru{sub 1-x}Sr{sub 2}RECu{sub 2+x}O{sub 8-d} (RE=Gd, Eu) and RuSr{sub 2}Gd{sub 1-y}Ce{sub y}Cu{sub 2}O{sub 8} compounds

    Energy Technology Data Exchange (ETDEWEB)

    Klamut, P.W. [Dept. of Physics, Northern Illinois Univ., DeKalb, IL (United States)]|[Inst. of Low Temperature and Structure Research of Polish Academy of Sciences, Wroclaw (Poland); Dabrowski, B.; Mini, S.M.; Kolesnik, S.; Maxwell, M.; Mais, J. [Dept. of Physics, Northern Illinois Univ., DeKalb, IL (United States); Shengelaya, A.; Keller, H. [Physik-Inst., Univ. Zuerich, Zuerich (Switzerland); Khazanov, R. [Physik-Inst., Univ. Zuerich, Zuerich (Switzerland)]|[Lab. for Muon-Spin Spectroscopy, Paul Scherrer Inst., Villigen PSI (Switzerland); Savic, I. [Physik-Inst., Univ. Zuerich, Zuerich (Switzerland)]|[Faculty of Physics, Univ. of Belgrade, Belgrade (Yugoslavia); Sulkowski, C.; Wlosewicz, D.; Matusiak, M. [Inst. of Low Temperature and Structure Research of Polish Academy of Sciences, Wroclaw (Poland); Wisniewski, A.; Puzniak, R.; Fita, I. [Inst. of Physics of Polish Academy of Sciences, Warszawa (Poland)

    2002-07-01

    We discuss the properties of new superconducting compositions of ruthenocuprates Ru{sub 1-x}Sr{sub 2}RECu{sub 2+x}O{sub 8-d} (RE=Gd, Eu) that were synthesized at 600 atm. of oxygen at 1080 C. By changing ratio between the Ru and Cu, the temperature of superconducting transition (T{sub C}) raises up to T{sub C}{sup max} = 72 K for x=0.3, 0.4. The hole doping achieved along the series increases with Cu{yields}Ru substitution. For x {ne} 0, T{sub C} can be subsequently tuned between T{sub C}{sup max} and 0 K by changing oxygen content in the compounds. The magnetic characteristics of the RE=Gd and Eu based compounds are interpreted as indicative of constrained dimensionality of the superconducting phase. Muon spin rotation experiments reveal the presence of the magnetic transitions at low temperatures (T{sub m}=14-2 K for x=0.1-0.4) that can originate in the response of Ru/Cu sublattice. RuSr{sub 2}Gd{sub 1-y}Ce{sub 1-y}Cu{sub 2}O{sub 8} (0 {<=} y {<=} 0.1) compounds show the simultaneous increase of T{sub N} and decrease of T{sub C} with y. The effect should be explained by the electron doping that occurs with Ce{yields}Gd substitution. Properties of these two series allow us to propose phase diagram for 1212-type ruthenocuprates that links their properties to the hole doping achieved in the systems. Non-superconducting single-phase RuSr{sub 2}GdCu{sub 2}O{sub 8} and RuSr{sub 2}EuCu{sub 2}O{sub 8} are reported and discussed in the context of the properties of substituted compounds. (orig.)

  10. Evaluation of optoelectronic response and Raman active modes in Tb{sup 3+} and Eu{sup 3+}-doped gadolinium oxide (Gd{sub 2}O{sub 3}) nanoparticle systems

    Energy Technology Data Exchange (ETDEWEB)

    Paul, Nibedita [National Institute of Technology Nagaland, Department of Physics, Dimapur, Nagaland (India); Tezpur University, Department of Physics, Tezpur, Assam (India); Mohanta, D. [Tezpur University, Department of Physics, Tezpur, Assam (India)

    2016-09-15

    Rare earth oxide (Tb{sup 3+}:Gd{sub 2}O{sub 3} and Eu{sup 3+}:Gd{sub 2}O{sub 3}) nanophosphors are exploited through spectroscopic and microscopic tools with special emphasis on D-F mediated radiative emission and Raman active vibrational modes. Powder X-ray diffraction measurements have revealed cubic crystal structure of the nanosystems and with an average crystallite size varying between ∝3.2 and 4.8 nm. Photoluminescence (PL) spectra of Tb{sup 3+} doped systems signify intense blue-green (∝490 nm) and green (∝544 nm) emissions mediated by {sup 5}D{sub 4} → {sup 7}F{sub 6} and {sup 5}D{sub 4} → {sup 7}F{sub 5} transitional events; respectively. In the PL responses of Eu{sup 3+} doped nanoparticle systems, we also identify magnetically-driven {sup 5}D{sub 0} → {sup 7}F{sub 1} (∝591 nm) and electrically driven {sup 5}D{sub 0} → {sup 7}F{sub 2} (∝619 nm) radiative features which seem to improve with increasing doping level. However, the magnitude of Judd-Ofelt (J-O) intensity parameters (Ω {sub 2,} {sub 4}), is significantly lowered for the high doping cases. Raman spectra of the undoped and RE doped systems exhibited several A{sub g} and F{sub g} modes in the range of Raman shift ∝100-600 cm{sup -1}. In the Raman spectra, the peaks located at ∝355 cm{sup -1} are assigned to the mixed mode of F{sub g} + A{sub g}, the line width of which was found to increase with RE doping. Moreover, owing to the enhanced defect concentration in the doped systems than its undoped counterpart, we anticipate a faster phonon relaxation and consequently, a suppression of phonon lifetime in the former case. (orig.)

  11. HfO2 - rare earth oxide systems in the region with high content of rare earth oxide

    International Nuclear Information System (INIS)

    Shevchenko, A.V.; Lopato, L.M.

    1982-01-01

    Using the methods of annealing and hardenings (10 2 -10 4 deg/s cooling rate) and differential thermal analysis elements of state diagrams of HfO 2 - rare earth oxide (rare earths-La, Pr, Nd, Sm, Gd, Tb, Dy, Y, Er, Yb, Lu, Sc) systems from 1800 deg C up to melting in the range of 60-100 mol% rare earth oxide concentration were constructed. Regularities of HfQ 2 addition effect on high-temperature polymorphic transformations of rare earth oxides were studied. Results of investigation were discussed from viewpoint of crystal chemistry

  12. SIMS study of oxygen diffusion in monoclinic HfO2

    Science.gov (United States)

    Mueller, Michael P.; De Souza, Roger A.

    2018-01-01

    The diffusion of oxygen in dense ceramics of monoclinic HfO2 was studied by means of (18O/16O) isotope exchange annealing and subsequent determination of isotope depth profiles by Secondary Ion Mass Spectrometry. Anneals were performed in the temperature range of 573 ≤T /K ≤ 973 at an oxygen partial pressure of p O2=200 mbar . All measured isotope profiles exhibited two features: the first feature, closer to the surface, was attributed mainly to slow oxygen diffusion in an impurity silicate phase; the second feature, deeper in the sample, was attributed to oxygen diffusion in bulk monoclinic HfO2 . The activation enthalpy of oxygen tracer diffusion in bulk HfO2 was found to be ΔHD∗≈0.5 eV .

  13. Optical Properties and Photoactivity of The Pigmentary TiO2 Doped with P2O5, K2O, Al2O3 and Sb2O3

    International Nuclear Information System (INIS)

    Glen, M; Grzmil, B

    2011-01-01

    The influence of the increasing content of antimony calculated to Sb 2 O 3 (0.08-0.57 mol%) with the constant amount of the other additives (calculated to P 2 O 5 , K 2 O, Al 2 O 3 ) on the optical properties and photostability of doped rutile has been investigated. The properties of the obtained TiO 2 -PKAlSb samples were compared to the commercial TiO 2 -PKAl composition. The starting material was the concentrated suspension of technical-grade hydrated titanium dioxide (HTD). The dopant agents' solutions were introduced to HTD. Prepared samples were calcined with gradually increasing process temperature. The XRD analysis was used to determine the rutile content in the TiO 2 samples. Optical properties of modified titanium dioxide have been determined spectrophotometrically by measuring the colour in the white (brightness, white tone) and grey system (relative lightening power, grey tone). Photostability was characterized by the white lead-glycerin test with UV-Vis light. It was observed that with the increasing content of antimony in rutile TiO 2 , doped with phosphates, potassium and aluminium, the brightness and grey tone were increasing but white tone decreased. The changes of the relative lightening power values were insignificant. Comparing the samples of TiO 2 -PKAlSb with the TiO 2 -PKAl composition it was observed that titanium dioxide doped with antimony had better white and grey tone. The increasing Sb 2 O 3 content in the TiO 2 caused the improvement of the photostability.

  14. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Science.gov (United States)

    Zhang, Yuewei; Neal, Adam; Xia, Zhanbo; Joishi, Chandan; Johnson, Jared M.; Zheng, Yuanhua; Bajaj, Sanyam; Brenner, Mark; Dorsey, Donald; Chabak, Kelson; Jessen, Gregg; Hwang, Jinwoo; Mou, Shin; Heremans, Joseph P.; Rajan, Siddharth

    2018-04-01

    In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.

  15. Giant magnetostructural coupling in Gd{sub 2/3}Ca{sub 1/3}MnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Correa, V F; Nieva, G; Haberkorn, N [Comision Nacional de Energia Atomica, Centro Atomico Bariloche, 8400 S. C. de Bariloche (Argentina); Saenger, N [Fachbereich Physik, Universitaet Konstanz, D-78457 Konstanz (Germany); Jorge, G, E-mail: victor.correa@cab.cnea.gov.a [Departamento de Fisica, FCEyN, Universidad de Buenos Aires (Argentina)

    2009-05-01

    We report high magnetic field magnetostructural studies on Gd{sub 2/3}Ca{sub 1/3}MnO{sub 3} single crystals. A giant linear magnetostrictive effect is observed in a wide temperature range (T < 120 K). Above 25 K a large hysteresis is seen reflecting the Mn magnetic moments ordering. At lower temperature (T < 15 K), a rather complicated field dependence arising from the competition between the Mn and Gd magnetic sublattices is observed. The relevance of the Gd ions in the low temperature behavior is further corroborated by specific heat experiments.

  16. Spectra and energy levels of Eu{sup 3+} in cubic phase Gd{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Eric R. [Kratos Defense and Security Solutions, Inc., 5030 Bradford Dr., Huntsville, AL 35805 (United States); Gruber, John B. [Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249-0697 (United States); Wellenius, Patrick; Muth, John F. [Department of Electrical and Computer Engineering, NC State University, Raleigh, NC 27606 (United States); Everitt, Henry O. [Department of Physics, Duke University, Durham, NC 27708 (United States); Army Aviation and Missile RD and E Center, Redstone Arsenal, AL 35898 (United States)

    2010-07-15

    In pulsed laser deposition of the sesquioxide semiconductor Gd{sub 2}O{sub 3}, adjusting the chamber oxygen pressure controls the crystalline structure of the host. This technique was used to deposit thin films of nominally 1.6% by weight europium-doped, cubic phase Gd{sub 2}O{sub 3} using 50 mTorr of oxygen. Structural measurements using high-resolution transmission electron microscopy and selected area electron diffraction confirm the films were polycrystalline, cubic phase Eu:Gd{sub 2}O{sub 3}. The spectroscopic assignment of emission lines to specific radiative transitions within the trivalent Eu ion is confirmed by theoretical analysis of the appropriate crystal field Hamiltonian. Detailed crystal-field splittings are presented for the {sup 5}D{sub J=0-2} and {sup 7}F{sub J=0-5} multiplet manifolds of Eu{sup 3+} in this host material. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  17. Electrical and microstructural properties of CaTiO3-doped K1/2Na1 ...

    Indian Academy of Sciences (India)

    KNN) and CaTiO3- modified K1/2Na1/2NbO3 (CTO-KNN) systems, were investigated. Discs doped with 0 to 0.55% mol of CaTiO3 (CTO) were sintered at 1125°C for 2 h. Although minority phases were found in doped samples, CaTiO3 was not ...

  18. Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials

    Science.gov (United States)

    Zhu, Dong-Ming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

    2004-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2-15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications will also be discussed.

  19. Photocatalytic properties of TiO{sub 2} prepared by coprecipitation and by hydrothermal synthesis and study of the effect of doping Gd{sup 3+}; Fotokatalyticke vlastnosti TiO{sub 2} pripraveneho koprecipitaciou a hydrotermalnou syntezou a studium vplyvu dopovania Gd{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Sipos, M [Univerzita Komenskeho v Bratislave, Prirodovedecka fakulta, Katedra anorganickej chemie, 84215 Bratislava (Slovakia)

    2012-04-25

    In this paper we described a synthesis of TiO{sub 2} nanopowders by coprecipitation and by hydrothermal method. We examined the effect of sample preparation procedure, of annealing temperature and doping by Gd{sup 3+} ions on the photocatalytic properties of TiO{sub 2}. We did not observe a correlation between primary micro-crystallites largeness and their photocatalytic activity. Sulfation and samples doping by G{sup d}3{sup +} ions enhances their photodegradation properties. Effect of doping is significantly larger at hydrothermally prepared samples. (authors)

  20. HfO2 and SiO2 as barriers in magnetic tunneling junctions

    Science.gov (United States)

    Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano

    2017-05-01

    SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.

  1. Structural, morphological, optical and photoluminescence properties of HfO2 thin films

    International Nuclear Information System (INIS)

    Ma, C.Y.; Wang, W.J.; Wang, J.; Miao, C.Y.; Li, S.L.; Zhang, Q.Y.

    2013-01-01

    Nanocrystalline monoclinic HfO 2 films with an average crystal size of 4.2–14.8 nm were sputter deposited under controlled temperatures and their structural characteristics and optical and photoluminescence properties have been evaluated. Structural investigations indicate that monoclinic HfO 2 films grown at higher temperatures above 400 °C are highly oriented along the (− 111) direction. The lattice expansion increases with diminishing HfO 2 crystalline size below 6.8 nm while maximum lattice expansion occurs with highly oriented monoclinic HfO 2 of crystalline size about 14.8 nm. The analysis of atomic force microscopy shows that the film growth at 600 °C can be attributed to the surface-diffusion-dominated growth. The intensity of the shoulderlike band that initiates at ∼ 5.7 eV and saturates at 5.94 eV shows continued increase with increasing crystalline size, which is intrinsic to nanocrystalline monoclinic HfO 2 films. Optical band gap varies in the range 5.40 ± 0.03–5.60 ± 0.03 eV and is slightly decreased with the increase in crystalline size. The luminescence band at 4.0 eV of HfO 2 films grown at room temperature can be ascribed to the vibronic transition of excited OH · radical while the emission at 3.23.3 eV for the films grown at all temperatures was attributed to the radiative recombination at impurity and/or defect centers. - Highlights: • Nanocrystalline monoclinic HfO 2 films were sputter deposited. • Structural, optical and photoluminescence properties were studied. • To analyze the scaling behavior using the power spectral density • Optical and photoluminescence properties strongly depend on film growth temperature

  2. Effect of microstructure on the high temperature mechanical properties of (CeO{sub 2}){sub 0.8}(GdO{sub 1.5}){sub 0.2} electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Sammes, N.M.; Zhang, Y. [Univ. of Waikato, Hamilton (New Zealand)

    1996-12-31

    CeO{sub 2}-based oxides have recently been shown to have great potential as electrolytes in medium temperature solid oxide fuel cell applications, primarily due to their high ionic conductivity. Steele et al., for example, have examined a cell of the type: O{sub 2}, La{sub 0.6}Sr{sub 0.4}Fe{sub 0.8}Co{sub 0.2}O{sub 3}{vert_bar}Ce{sub 0.9}Gd{sub 0.1}O{sub 1.95}{vert_bar}Ni-ZrO{sub 2}, H{sub 2}/H{sub 2}O at 715{degrees}C. Gd{sub 2}O{sub 3} doped CeO{sub 2} has been reported as having one of the highest oxygen ion conductivities of the ceria-based materials. An ionic conductivity of 8.3 x 10{sup -2} s/cm has been reported for (CeO{sub 2}){sub 0.8}(GdO{sub 1.5}){sub 0.2} at 800{degrees}C, which is approximately four times that of Y{sub 2}O{sub 3}-doped ZrO{sub 2}, at the same temperature. Although the electrical properties of the material have been examined in detail, very little work has considered the microstructural/property relationships, particularly in relation to the mechanical properties. It is well know that CeO{sub 2}-based materials are difficult to density and attempts have been performed to examine this. Preliminary studies have also been undertaken to examine the effect of sintering on the mechanical properties of the material. In this paper we examine the effect of microstructure on the high temperature mechanical properties of (CeO{sub 2}){sub 0.8}(GdO{sub 1.5}){sub 0.2}.

  3. Homogeneity and microstructure study of Gd2O3-UO2 pellets

    International Nuclear Information System (INIS)

    Pan Ying; Gao Dihua; Guo Yibai; Zhu Shuming

    1994-10-01

    The microstructure of Gd 2 O 3 -UO 2 pellets (0∼10 wt%) prepared in different conditions, the homogeneity distribution of Gd 2 O 3 in the pellets and the lattice parameter of solid solution are studied by metalloscope, WDS, EDAX, SEM-image processing system, XRD and image analyzer. The theoretical density has been calculated. The effect of size and content of Gd 2 O 3 particles, the blend process, the sintering temperature and time, and the sintering atmosphere on the microstructure of Gd 2 O 3 pellets and the homogeneity of Gd 2 O 3 in the pellets are studied. (16 refs., 10 figs., 8 tabs.)

  4. Interface engineered HfO2-based 3D vertical ReRAM

    International Nuclear Information System (INIS)

    Hudec, Boris; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Hou, Tuo-Hung; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária

    2016-01-01

    We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO 2 /TiN memory cell. The HfO 2 switching layer is grown by atomic layer deposition on the sidewall of a SiO 2 /TiN/SiO 2 /TiN/SiO 2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 10 4 s and excellent switching stability at 400 K. Endurance of 10 7 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance. (paper)

  5. Investigation of the thermoluminescent response of K2GdF5:Dy3+ crystals to photon radiation and neutron fields

    International Nuclear Information System (INIS)

    Silva, Edna C.; Faria, Luiz O.; Santos, Joelan A.L.; Vilela, Eudice C.

    2009-01-01

    The thermoluminescent (TL) properties of undoped and Dy 3+ doped K 2 GdF 5 crystals were investigated from the point of view of gamma and neutron dosimetry. Crystalline K 2 GdF 5 platelets with thickness of about 1 mm and doped with 0.0, 0.2, 1.0, 5.0 and 10.0 at.% Dy 3+ ions, synthesized under hydrothermal conditions, were irradiated in order to study TL sensitivity, as well as dose and energy response, reproducibility and fading. As it has been turned out, crystals doped with 5.0 at% Dy 3+ show the most efficient TL response and demonstrate a linear response to doses for all the radiation fields. TL glow curves from Dy 3+ doped K 2 GdF 5 crystals can be deconvoluted into four individual TL peaks centered at 153, 185, 216 and 234 deg C. Concerning the photon fields studied, the maximum TL response has been found for the 52.5 keV photons. The intensity is 15 times more than that of the response for the 662 keV photons from a Cs-137 source. On the other hand, the K 2 GdF 5 crystals doped with 5.0 at % Dy 3+ have also been found to have the better TL response for fast neutron radiation, among all dopants studied. For fast neutron radiation produced by a 241 Am-Be source, the TL responses for doses were also linear and comparable to that of commercial TLD-600, irradiated at same conditions. It has been established that the gamma sensitivity of the crystals is about 0.07% of the neutron sensitivity and the fast neutron sensitivity is about 4.5 % of the thermal neutron sensitivity. These results points out that K 2 Gd 0.95 Dy 0.05 F 5 crystals are good candidates for use in neutron dosimetry applications. (author)

  6. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics.

    Science.gov (United States)

    Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C; Kim, Hyoungsub

    2017-08-29

    We studied the impact of H 2 pressure during post-metallization annealing on the chemical composition of a HfO 2 /Al 2 O 3 gate stack on a HCl wet-cleaned In 0.53 Ga 0.47 As substrate by comparing the forming gas annealing (at atmospheric pressure with a H 2 partial pressure of 0.04 bar) and H 2 high-pressure annealing (H 2 -HPA at 30 bar) methods. In addition, the effectiveness of H 2 -HPA on the passivation of the interface states was compared for both p- and n-type In 0.53 Ga 0.47 As substrates. The decomposition of the interface oxide and the subsequent out-diffusion of In and Ga atoms toward the high-k film became more significant with increasing H 2 pressure. Moreover, the increase in the H 2 pressure significantly improved the capacitance‒voltage characteristics, and its effect was more pronounced on the p-type In 0.53 Ga 0.47 As substrate. However, the H 2 -HPA induced an increase in the leakage current, probably because of the out-diffusion and incorporation of In/Ga atoms within the high-k stack.

  7. EuO and Gd-doped EuO thin films. Epitaxial growth and properties

    International Nuclear Information System (INIS)

    Sutarto, Ronny

    2009-01-01

    quality of many of the doped EuO samples used in the past bulk studies. The focus of this thesis is on the preparation and the properties of high-quality single-crystalline EuO and Gd-doped EuO thin films. The so-called Eu-distillation-assisted molecular beam epitaxy (MBE) has been employed to achieve full control of the stoichiometry. The films have been epitaxially grown on yttria-stabilized cubic zirconia (YSZ) (001) substrates. By a systematic variation of the oxygen deposition rates, we have been able to observe sustained oscillations in the intensity of the reflection high-electron energy diffraction (RHEED) pattern during growth. We thus have demonstrated that layer-by-layer growth has been achieved for the first time. We also have confirmed that YSZ indeed supplies oxygen during the initial stages of growth, yet the EuO stoichiometry can still be well maintained. In the case of Gd-doped EuO films, the presence of Gd even helps to stabilize the layer-by-layer growth mode. It is important to achieve this growth mode, since it enables the preparation of films with very smooth and at surfaces. This in turn facilitates the capping of the films with a thin Al overlayer in order to protect the films against degradation under ambient conditions. More important, the smoothness of the lm will enable the preparation of high quality device structures. By using ex-situ soft x-ray absorption spectroscopy (XAS) at the Eu and Gd M 4,5 edges, we have confirmed that the films are completely free from Eu 3+ contaminants, and we were able to determine reliably the actual Gd concentration. This actual Gd concentration could in fact significantly deviate from the nominal Gd/Eu evaporation ratio. From magnetization and susceptibility measurements, we found the Curie temperature to increase smoothly as a function of doping from 69 K up to a maximum of 125 K, all with a saturation moment of 7 μB. A threshold behavior was not observed for Gd concentrations as low as 0.2 %. Analysis of the

  8. EuO and Gd-doped EuO thin films. Epitaxial growth and properties

    Energy Technology Data Exchange (ETDEWEB)

    Sutarto, Ronny

    2009-07-06

    this respect the quality of many of the doped EuO samples used in the past bulk studies. The focus of this thesis is on the preparation and the properties of high-quality single-crystalline EuO and Gd-doped EuO thin films. The so-called Eu-distillation-assisted molecular beam epitaxy (MBE) has been employed to achieve full control of the stoichiometry. The films have been epitaxially grown on yttria-stabilized cubic zirconia (YSZ) (001) substrates. By a systematic variation of the oxygen deposition rates, we have been able to observe sustained oscillations in the intensity of the reflection high-electron energy diffraction (RHEED) pattern during growth. We thus have demonstrated that layer-by-layer growth has been achieved for the first time. We also have confirmed that YSZ indeed supplies oxygen during the initial stages of growth, yet the EuO stoichiometry can still be well maintained. In the case of Gd-doped EuO films, the presence of Gd even helps to stabilize the layer-by-layer growth mode. It is important to achieve this growth mode, since it enables the preparation of films with very smooth and at surfaces. This in turn facilitates the capping of the films with a thin Al overlayer in order to protect the films against degradation under ambient conditions. More important, the smoothness of the lm will enable the preparation of high quality device structures. By using ex-situ soft x-ray absorption spectroscopy (XAS) at the Eu and Gd M{sub 4,5} edges, we have confirmed that the films are completely free from Eu{sup 3+} contaminants, and we were able to determine reliably the actual Gd concentration. This actual Gd concentration could in fact significantly deviate from the nominal Gd/Eu evaporation ratio. From magnetization and susceptibility measurements, we found the Curie temperature to increase smoothly as a function of doping from 69 K up to a maximum of 125 K, all with a saturation moment of 7 {mu}B. A threshold behavior was not observed for Gd concentrations

  9. Vacuum ultraviolet excited photoluminescence properties of Gd2O2CO3:Eu3+ phosphor

    Institute of Scientific and Technical Information of China (English)

    WANG Zhilong; WANG Yuhua; ZHANG Jiachi

    2008-01-01

    The Gd2O2CO3:Eu3+ with type-II structure phosphor was successfully synthesized via flux method at 400℃ and their photoluminescence properties in vacuum ultraviolet (VUV) region were examined. The broad and strong excitation bands in the range of 153-205 nm owing to the CO32- host absorption and charge transfer (CT) of Gd3+-O2- were observed for Gd2O2CO3:Eu3+. Under 172 nm excitation, Gd2O2CO3:Eu3+ exhibited strong red emission with good color purity, indicating Eu3+ ions located at low symmetry sites and the chromaticity coordination of luminescence for Gd2O2CO3:Eu3+ was (x=0.652, y=0.345). The photoluminescence quenching concentration of Eu3+ excited by 172 nm for Gd2O2CO3:Eu3+ was about 5%. Gd2O2CO3:Eu3+ would be a potential VUV-excited red phosphor applied in mercury-free fluorescent lamps.

  10. Luminescence and spectroscopic investigations on Gd3+ doped ZnO nanophosphor

    Directory of Open Access Journals (Sweden)

    G. Krishna Reddy

    2017-09-01

    Full Text Available The present paper describes the synthesis of 0.1 mol% Gadolinium (Gd doped Zinc oxide (ZnO nanophosphor by solution combustion method using Oxalyl dihydrazide (ODH fuel. Powder X-ray diffraction (PXRD peaks are well matched with the standard hexagonal wurtzite structure of ZnO (JCPDS card no. 36-1451. SEM and TEM analysis reveals porous morphology of as -formed sample with particles having narrow size distribution in the range ∼60–70 nm, in good agreement with XRD data. The PL spectrum of Gd doped ZnO sample exhibits an extra blue emission at 441 nm (∼2.81 eV in addition to the emission bands from undoped ZnO. From the TL data of ZnO:Gd nanophosphor with UV irradiation, it is observed that considerable amount of re-trapping is taking place in all the TL second order peaks. The EPR spectrum exhibits a number of resonance signals suggesting that Gd3+ ions are experiencing different crystal field strength and Zeeman interactions.

  11. Study on the thermoluminescent properties of K2YF5 and K2GdF5 crystals doped with optically active trivalent ions for gamma and neutrons dosimetry

    International Nuclear Information System (INIS)

    Silva, Edna Carla da

    2008-01-01

    In this work, the thermoluminescent (TL) properties of both double potassium yttrium fluoride (K 2 YF 5 ) and double potassium gadolinium fluoride (K 2 GdF 5 ) crystals doped with optically active rare earth ions were investigated from the point of view of gamma and neutron dosimetry. Crystalline platelets with thickness of about 1 mm, synthesized under hydrothermal conditions, were irradiated in order to study TL sensitivity, as well as dose and energy response, reproducibility and fading, in terms of Ce 3+ , Tb 3+ , Dy 3+ , e Pr 3+ concentrations. The K 2 YF 5 crystals doped with 1.0 at por cent Dy 3+ have been found to have an excellent linear TL response to X and gamma photons, in the range of 0.01 to 10 mGy. The TL output is comparable to that of CaS0 4 :Mn dosemeters. The main peak at 130 deg C has been found to have a TL response for 41.1 keV X-ray energy 32 times higher than that for 662 keV gamma rays. This fact points out that the K 2 Y 0.99 Dy 0.01 F 5 crystals have great potential for X-rays diagnostic and/or industrial radiography. On the other hand, the K 2 GdF 5 crystals doped with 5.0 at por cent Dy 3+ have been found to have the better TL response for gamma and fast neutron radiation, among the dopants studied. For gamma fields the TL response was linear for doses ranging from 0.1 to 200 mGy. The TL peak around 200 deg C can be deconvoluted into four individual peaks, all of them with linear behavior. For fast neutron radiation produced by an 241 Am B e source, the TL responses for doses ranging from 0.6 to 12 mSv were also linear and comparable to that of commercial TLD-600, irradiated at same conditions. The TL emission due to neutrons was in the high temperature range, above 200 deg C. These results points out that K 2 Gd 0.95 Dy 0.05 F 5 crystals are good candidates for use in neutron dosimetry applications. (author)

  12. Effect of oxide charge trapping on x-ray photoelectron spectroscopy of HfO2/SiO2/Si structures

    International Nuclear Information System (INIS)

    Abe, Yasuhiro; Miyata, Noriyuki; Suzuki, Haruhiko; Kitamura, Koji; Igarashi, Satoru; Nohira, Hiroshi; Ikenaga, Eiji

    2009-01-01

    We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer. (author)

  13. Room-temperature picosecond high-order stimulated Raman scattering in laser garnet crystal hosts Gd3Ga5O12, Gd3Sc2Ga3O12, and Ca3(Nb,Ga)2Ga3O12

    International Nuclear Information System (INIS)

    Kaminskii, Alexandr A; Eichler, H J; Findeisen, J; Ueda, Ken-ichi; Fernandez, J; Balda, R

    1998-01-01

    High-order Stokes and anti-Stokes generation in the visible and near-infrared in cubic laser crystal hosts Gd 3 Ga 5 O 12 , Gd 3 Sc 2 Ga 3 O 12 , and Ca 3 (Nb,Ga) 2 Ga 3 O 12 was observed for the first time. All scattering-laser components were identified and attributed to the SRS-active vibration modes of these garnet crystals. (letters to the editor)

  14. Critical current density above 15 MA cm−2 at 30 K, 3 T in 2.2 μm thick heavily-doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    International Nuclear Information System (INIS)

    Selvamanickam, V; Gharahcheshmeh, M Heydari; Xu, A; Zhang, Y; Galstyan, E

    2015-01-01

    A critical current (I c ) value of 3963 A/12 mm, corresponding to a critical current density (J c ) of 15 MA cm −2 has been achieved at 30 K, 3 T in the orientation of field parallel to the c-axis (B||c) in 2.2 μm thick film (Gd,Y)BaCuO tapes with 20 mol% Zr addition made by metal organic chemical vapor deposition. This J c level is more than a factor of four higher than the J c values of 7.5 mol% Zr-added tapes, which are an industry benchmark. The critical current values in a magnetic field of 3 T parallel to the c-axis in the 2.2 μm thick, 20 mol% Zr-added tape reached 2833 A/12 mm (10.1 MA cm −2 ), 1881 A/12 mm (7.1 MA cm −2 ) and 805 A/12 mm (3.1 MA cm −2 ) at 40 K, 50 K and 65 K respectively. Such high critical current values were possible because of maintaining a strong alignment of BaZrO 3 nanocolumns along the c-axis over the entire film thickness. (fast track communication)

  15. Electromagnetic Properties of (Gd, Y)Ba2Cu3Ox Superconducting Tapes With High Levels of Zr Addition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Y; Yao, Y; Chen, Y; Khatri, ND; Liu, J; Galtsyan, E; Lei, C; Selvamanickam, V

    2013-06-01

    The dependence of the critical current density (J(c)) on the orientation of applied magnetic fields was studied in Zr-doped (Gd, Y)Ba2Cu3Ox tapes fabricated by metal organic chemical vapor deposition. The in-field performance of J(c) of (Gd, Y)Ba2Cu3Ox tapes with Zr-doping levels of 7.5-30 at.% was investigated up to 5 T over a temperature range of 40-77 K. The highest critical currents (I-c) at H parallel to c and the highest values of minimum Ic in angular dependence measurements were achieved in the tapes with 20% Zr doping over a broad range of temperature and magnetic field conditions measured. The electromagnetic properties have been related to the changes in BaZrO3 content and microstructure.

  16. Orange-red emitting Gd2Zr2O7:Sm3+: Structure-property correlation, optical properties and defect spectroscopy

    Science.gov (United States)

    Gupta, Santosh K.; Reghukumar, C.; Sudarshan, K.; Ghosh, P. S.; Pathak, Nimai; Kadam, R. M.

    2018-05-01

    Local structure analysis of dopant ion, understanding host to dopant energy transfer dynamics and defects characterization in a doped material which plays an important role in the designing a highly efficient opto-electronic material. In this connection a new Sm3+ doped Gd2Zr2O7 pyrochlore material was synthesized using gel-combustion technique and was characterized systematically using X-ray diffraction (XRD), time resolved photoluminescence spectroscopy (TRPLS), positron annihilation lifetime spectroscopy (PALS) and density functional theory (DFT) based ab-initio calculation. Based on DFT site selective energetics calculation and luminescence decay measurement, it was observed that the Sm3+ was distributed at both Gd3+ and Zr4+ site with higher Sm3+ fraction at the Gd3+ site. PALS was used to probe the presence of defects in the phosphor. In this work intense orange-red emission is realized through manipulating the energy transfer from host defect emission (oxygen vacancies) to Sm3+ which allows color emission from green in undoped to orange-red in doped samples. Effect of dopant concentration and annealing temperature was probed using TRPLS and PALS. These all information is highly important for researcher looking to achieve pyrochlore based phosphor materials with high quantum yield.

  17. Structural Characterization and Absolute Luminescence Efficiency Evaluation of Gd2O2S High Packing Density Ceramic Screens Doped with Tb3+ and Eu3+ for further Applications in Radiology

    Science.gov (United States)

    Dezi, Anna; Monachesi, Elenasophie; D'Ignazio, Michela; Scalise, Lorenzo; Montalto, Luigi; Paone, Nicola; Rinaldi, Daniele; Mengucci, Paolo; Loudos, George; Bakas, Athanasios; Michail, Christos; Valais, Ioannis; Fountzoula, Christine; Fountos, George; David, Stratos

    2017-11-01

    Rare earth activators are impurities added in the phosphor material to enhance probability of visible photon emission during the luminescence process. The main activators employed are rare earth trivalent ions such as Ce+3, Tb+3, Pr3+ and Eu+3. In this work, four terbium-activated Gd2O2S (GOS) powder screens with different thicknesses (1049 mg/cm2, 425.41 mg/cm2, 313 mg/cm2 and 187.36 mg/cm2) and one europium-activated GOS powder screen (232.18 mg/cm2) were studied to investigate possible applications for general radiology detectors. Results presented relevant differences in crystallinity between the GOS:Tb doped screens and GOS:Eu screens in respect to the dopant agent present. The AE (Absolute efficiency) was found to rise (i) with the increase of the X-ray tube voltage with the highest peaking at 110kVp and (ii) with the decrease of the thickness among the four GOS:Tb. Comparing similar thickness values, the europium-activated powder screen showed lower AE than the corresponding terbium-activated.

  18. Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

    International Nuclear Information System (INIS)

    Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

    2011-01-01

    This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO 2 /Ta 2 O 5 charge-trapping layer. In comparison to a memory capacitor with a single HfO 2 trapping layer, the erase speed of a memory capacitor with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔV FB = 4 V, the device with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO 2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application

  19. Effects of Sm3+/Yb3+ co-doping and temperature on the Raman, IR spectra and structure of [TeO2-GeO2-K2O-Sm2O3/Yb2O3] glasses

    International Nuclear Information System (INIS)

    Shaltout, I.; Badr, Y.

    2006-01-01

    Effects of Sm 3+ /Yb 3+ co-doping on Raman scattering, IR absorption, temperature dependence of the Raman spectra up to 210 o C and the structure of two glass systems of the composition (80TeO 2 -10GeO 2 -8K 2 O-2Sm 2 O 3 /Yb 2 O 3 ) is discussed. It was found that the addition of Yb 3+ to the glass very strongly enhances the intensities of the antistokes' Raman bands at 155, 375, 557 and 828 cm -1 and quenches both the intensities of the stokes' vibration modes of the TeO 4 units in the range of 120-770 cm -1 and the intensities of the OH - stretching vibration modes in the range of 2600-3300 cm -1 . Sm 2 O 3 /Yb 2 O 3 rare earth co-doping has a great influence on removing and/or changing the nature of the OH - groups. The appearance and splitting of the stretching vibration modes of the OH - groups at lower frequencies (2770, 2970 cm -1 ) for the Sm +3 singly doped glass sample, compared to the band at ∼3200 cm -1 for the Sm 3+ /Yb 3+ co-doped glass sample, suggested that the OH - groups are more strongly bonded and incorporated with the glass matrix for the singly doped glass. Heating the sample up continuously weakens the hydrogen bonding of the OH - groups to the glass matrix leading to creation of NBO and breakdown of the connectivity of the OH - groups to the TeO 4 , TeO 3+1 and TeO 3 structural units. Raman bands at 286, 477, 666 and 769 cm -1 were assigned to its respective vibrations of Te 2 O 7 , TeO 4 -4 species, the (Te-O-Te) bending vibrations of the TeO 4 triagonal bipyramids (tbps), the axial symmetric stretching vibration modes (Te ax -O) s with bridging oxygen BO atoms and to the (Te-O) nbo non-bridging stretching vibration modes of the TeO 3+1 and/or TeO 3 pyramids

  20. Energy transfer phenomena and Judd-Ofelt analysis on Sm{sup 3+} ions in K{sub 2}GdF{sub 5} crystal

    Energy Technology Data Exchange (ETDEWEB)

    Do, Phan Van [Thuyloi University, 175 Tay Son, Dong da Dist, Hanoi (Viet Nam); Tuyen, Vu Phi, E-mail: vptuyen@gust-edu.vast.vn [Graduate University of Science and Technology - VAST, 18 Hoang quoc Viet, Hanoi (Viet Nam); DuyTan University, K7/25 QuangTrung, Danang (Viet Nam); Quang, Vu Xuan [DuyTan University, K7/25 QuangTrung, Danang (Viet Nam); Khaidukov, Nicholas M. [Kurnakov Institute of General and Inorganic Chemistry, Moscow (Russian Federation); TrongThanh, Nguyen [Institute of Materials Science - VAST, 18 Hoang quoc Viet, Hanoi (Viet Nam); Sengthong, Bounyavong [DuyTan University, K7/25 QuangTrung, Danang (Viet Nam); Huy, Bui The, E-mail: buithehuy.nt@gmail.com [Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of)

    2016-11-15

    The Raman, absorption, luminescence spectra and lifetimes curves of Sm{sup 3+}-doped K{sub 2}GdF{sub 5}were measured. Based on the Judd-Ofelt analysis, the values of radiative transition probabilities, branching ratios, integrated emission cross-sections and radiative lifetimes of excited states of Sm{sup 3+} in K{sub 2}GdF{sub 5} crystal were calculated. The migration of excitation energy between the Gd{sup 3+} ions and the trapping processes of Gd{sup 3+} excitation energy by Sm{sup 3+} and Tb{sup 3+}ions in K{sub 2}GdF{sub 5} crystal are reported. The role of the overlapping between the broad, allowed absorption bands of the RE{sup 3+} ions and the narrow absorption lines {sup 6}I{sub J} and {sup 6}P{sub J} of Gd{sup 3+} ions on the trapping rates of the RE{sup 3+} was discussed. The energy transfer between the Sm{sup 3+} ions was studied by the decay measurement, which has been fitted by Inokuti-Hirayama energy transfer model and revealed that electric dipole–quadrupole interaction is responsible for the energy transfer process in Sm{sup 3+} ions doped K{sub 2}GdF{sub 5} crystal.

  1. Chemical reaction at the interface between pentacene and HfO2

    International Nuclear Information System (INIS)

    Kang, S.J.; Yi, Y.; Kim, K.H.; Yoo, C.Y.; Moewes, A.; Cho, M.H.; Denlinger, J.D.; Whang, C.N.; Chang, G.S.

    2005-01-01

    The electronic structure and the interface formation at the interface region between pentacene and HfO2 are investigated using x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and x-ray emission spectroscopy (XES). The measured C 1s XPS spectra of pentacene indicate that chemical bonding occurs at the interface between pentacene and HfO2. The carbon of pentacene reacts with oxygen belonging to HfO2 and band bending occurs at the interface due to a redistribution of charge. The determined interface dipole and band bending between pentacene and HfO2 are 0.04 and 0.1 eV, respectively. The highest occupied molecular orbital (HOMO) level is observed at 0.68 eV below the Fermi level. This chemical reaction allows us to grow a pentacene film with large grains onto HfO2. We conclude that high performance pentacene thin film transistors can be obtained by inserting an ultrathin HfO2 layer between pentacene and a gate insulator

  2. Luminescence and energy transfer properties of Eu3+ and Gd3+ in ZrO2

    International Nuclear Information System (INIS)

    Villabona-Leal, E.G.; Diaz-Torres, L.A.; Desirena, H.; Rodríguez-López, J.L.; Pérez, Elías; Meza, Octavio

    2014-01-01

    Red luminescence emission in ZrO2:Gd 3+ –Eu 3+ nanocrystal under 250 nm radiation excitation is achieved. These materials exhibit a tetragonal phase that is retained by the presence of lanthanide ions. Thus, a study of the optical properties as a function of the dopant concentration was been carried out without the deleterious effects of having segregation of other crystalline phases. We analyze the emission and lifetime curves as a function of dopant concentration through a rate equation simulation, finding an excellent fitting. As results, the nonradiative and radiative relaxation constants, as well as a quantitative estimation of the energy transfer processes among Eu 3+ , Gd 3+ and O 2− ions are reported for the first time. The proposed model can be extended (or applicable) to explain the fluorescence dynamics in other nanomaterials doped with Eu 3+ and Gd 3+ under UV excitation. -- Highlights: • ZrO 2 nanocrystal exhibits a tetragonal phase in the presence of Eu and Gd dopants. • Emission and lifetimes as a function of dopant concentration were analyzed by rate equation model. • Quantitative estimation of the energy transfer processes among Eu 3+ , Gd 3+ and O 2− ions are reported

  3. Study of structure and antireflective properties of LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 trilayers for UV applications

    Science.gov (United States)

    Marszalek, K.; Jaglarz, J.; Sahraoui, B.; Winkowski, P.; Kanak, J.

    2015-01-01

    The aim of this paper is to study antireflective properties of the tree-layer systems LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 deposited on heated optical glass substrates. The films were evaporated by the use two deposition techniques. In first method oxide films were prepared by means of e-gun evaporation in vacuum of 5 × 10-5 mbar in the presence of oxygen. The second was used for the deposition of fluoride films. They were obtained by means of thermal source evaporation. Simulation of reflectance was performed for 1M2H1L (Quarter Wavelength Optical Thickness) film stack on an optical quartz glass with the refractive index n = 1.46. The layer thickness was optimized to achieve the lowest light scattering from glass surface covered with dioxide and fluoride films. The values of the interface roughness were determined through atomic force microscopy measurements. The essence of performed calculation was to find minimum reflectance of light in wide ultraviolet region. The spectral dispersion of the refractive index needed for calculations was determined from ellipsometric measurements using the spectroscopic ellipsometer M2000. Additionally, the total reflectance measurements in integrating sphere coupled with Perkin Elmer 900 spectrophotometer were performed. These investigations allowed to determine the influence of such film features like surface and interface roughness on light scattering.

  4. Neutron investigation of Ru-doped Nd1/2Ca1/2MnO3. Comparison with Cr-doped Nd1/2Ca1/2MnO3

    International Nuclear Information System (INIS)

    Moritomo, Yutaka; Nonobe, Toshihiko; Machida, Akihiko; Ohoyama, Kenji

    2002-01-01

    Lattice and magnetic properties are investigated for 3% Ru- and Cr-doped Nd 1/2 Ca 1/2 MnO 3 . The parent Nd 1/2 Ca 1/2 MnO 3 is a charge-ordered insulator (T CO =250K). With decreasing temperature below ≅210K, these compounds are separated into two perovskite phases, that is, the long-c and short-c phases. The long-c region shows a ferromagnetic transition at T C ≅210K for the Ru-doped compound and ≅130K for the Cr-doped compound, while the short-c region shows antiferromagnetic transition at T N ≅150K for Ru and ≅110K for Cr. We discuss the origin of the enhanced T C for the Ru-doped compound in terms of the effective one-electron bandwidth W of the e g -band. (author)

  5. Vibrational spectra and lattice instabilities in the high-T/sub c/ superconductors YBa2Cu3O7 and GdBa2Cu3O7

    International Nuclear Information System (INIS)

    Bozovic, I.; Mitzi, D.; Beasley, M.

    1987-01-01

    The exceptionally high T/sub c/ of layered cuprates was proposed recently as originating from electronically driven structural instabilities. We have studied the infrared and Raman spectra of YBa 2 Cu 3 O/sub 7-//sub δ/ and GdBa 2 Cu 3 O/sub 7-//sub δ/ over a broad range of temperatures, from 10 to 300 K. We observed neither mode softening nor any other spectroscopic signature of lattice instabilities

  6. Applied strain dependence of critical current and internal lattice strain for BaHfO_3-doped GdBa_2Cu_3O_y coated conductors

    International Nuclear Information System (INIS)

    Usami, Takashi; Yoshida, Yutaka; Ichino, Yusuke; Sugano, Michinaka; Machiya, Shutaro; Ibi, Akira; Izumi, Teruo

    2016-01-01

    The strain effect of REBa_2Cu_3O_y (REBCO: RE = Y, Gd, Sm)-coated conductors (CCs) on critical current (I_c) is one of the most fundamental factors for superconducting coil applications. In this study, we aim to clarify the effect of artificial pinning center shapes on the strain effect in BHO-doped GdBCO CCs. To achieve this, we fabricated a Pure-GdBCO CC, a BHO nanorod-doped GdBCO CC and a multilayered-GdBCO (ML-GdBCO) CC, and carried out bending tests. As the result, the strain dependence of I_c for each CC showed an upward convex and the peak strain of the BHO-doped GdBCO CC shifts towards the compressive strain independent of the BHO shapes. In addition, the strain sensitivity of I_c in the GdBCO CCs including BHO becomes smaller. To clarify the difference between the strain sensitivity of I_c and the peak strain among the CCs, we evaluated the residual strain and the slopes of the internal lattice strains against the applied tensile strain (β). From this measurement, the residual strains for the Pure-GdBCO CC and the ML-GdBCO CC were almost the same. In addition, there was no change in the β value between the Pure-GdBCO and ML-GdBCO CCs. These results suggest that the changes in peak strain and strain sensitivity were not related to the internal lattice strain. (author)

  7. State-of-the-art flux pinning in YBa2Cu3O7-δ by the creation of highly linear, segmented nanorods of Ba2(Y /Gd)(Nb/Ta)O6 together with nanoparticles of (Y /Gd)2O3 and (Y /Gd)Ba2Cu4O8

    International Nuclear Information System (INIS)

    Ercolano, G; Bianchetti, M; Wimbush, S C; Harrington, S A; MacManus-Driscoll, J L; Wang, H; Lee, J H

    2011-01-01

    Self-assembled, segmented nanorods of c-axis-aligned Ba 2 (Y /Gd)(Nb/Ta)O 6 as well as randomly distributed nanoparticles of (Y /Gd) 2 O 3 and (Y /Gd)Ba 2 Cu 4 O 8 were grown into YBa 2 Cu 3 O 7-δ (YBCO) thin films by pulsed-laser deposition. The complex pinning landscape proves to be extremely effective, particularly at higher fields where the segmented vortices yield a plateau in critical current density (J c ) with field angle around 60 0 . In 0.3 μm thick films, the J c values are higher than 1 MA cm -2 at 2.5 T (H||c axis). Owing to the combined interactions of the vortices with the different pinning centres, interesting new features are observed at high fields in the angular dependence of J c .

  8. High temperature-induced phase transitions in Sr{sub 2}GdRuO{sub 6} complex perovskite

    Energy Technology Data Exchange (ETDEWEB)

    Triana, C.A.; Corredor, L.T.; Landinez Tellez, D.A. [Grupo de Fisica de Nuevos Materiales, Departamento de Fisica, Universidad Nacional de Colombia, Bogota D.C. A.A. 14490 (Colombia); Roa-Rojas, J., E-mail: jroar@unal.edu.co [Grupo de Fisica de Nuevos Materiales, Departamento de Fisica, Universidad Nacional de Colombia, Bogota D.C. A.A. 14490 (Colombia)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Crystal structure, thermal expansion and phase transitions at high-temperature of Sr{sub 2}GdRuO{sub 6} perovskite has been investigated. Black-Right-Pointing-Pointer X-ray diffraction pattern at 298 K of Sr{sub 2}GdRuO{sub 6} corresponds to monoclinic perovskite-type structure with P2{sub 1}/n space group. Black-Right-Pointing-Pointer Evolution of X-ray diffraction patterns at high-temperature shows that the Sr{sub 2}GdRuO{sub 6} perovskite suffers two-phase transitions. Black-Right-Pointing-Pointer At 573 K the X-ray diffraction pattern of Sr{sub 2}GdRuO{sub 6} corresponds to monoclinic perovskite-type structure with I2/m space group. Black-Right-Pointing-Pointer At 1273 K the Sr{sub 2}GdRuO{sub 6} perovskite suffers a complete phase-transition from monoclinic I2/m (no. 12) to tetragonal I4/m (no. 87). -- Abstract: The crystal structure behavior of the Sr{sub 2}GdRuO{sub 6} complex perovskite at high-temperature has been investigated over a wide temperature range between 298 K {<=} T {<=} 1273 K. Measurements of X-ray diffraction at room-temperature and Rietveld analysis of the experimental patterns show that this compound crystallizes in a monoclinic perovskite-like structure, which belongs to the P2{sub 1}/n (no. 14) space group and 1:1 ordered arrangement of Ru{sup 5+} and Gd{sup 3+} cations over the six-coordinate M sites. Experimental lattice parameters were obtained to be a =5.8103(5) Angstrom-Sign , b =5.8234(1) Angstrom-Sign , c =8.2193(9) Angstrom-Sign , V = 278.11(2) Angstrom-Sign {sup 3} and angle {beta} = 90.310(5) Degree-Sign . The high-temperature analysis shows the occurrence of two-phase transitions on this material. First, at 573 K it adopts a monoclinic perovskite-type structure with I2/m (no. 12) space group with lattice parameters a = 5.8275(6) Angstrom-Sign , b = 5.8326(3) Angstrom-Sign , c = 8.2449(2) Angstrom-Sign , V = 280.31(3) Angstrom-Sign {sup 3} and angle {beta} = 90.251(3) Degree-Sign . Close

  9. Luminescence and light yield of (Gd2Y)(Ga3Al2)O12:Pr3+ single crystal scintillators

    Science.gov (United States)

    Lertloypanyachai, Prapon; Pathumrangsan, Nichakorn; Sreebunpeng, Krittiya; Pattanaboonmee, Nakarin; Chewpraditkul, Weerapong; Yoshikawa, Akira; Kamada, Kei; Nikl, Martin

    2017-06-01

    Praseodymium-doped (Gd2Y)(Ga3Al2)O12 (GYGAG: Pr) single crystals are grown by the micro-pulling down method with different Pr concentrations. The energy transfer process between Pr3+ and Gd3+ is investigated by photoluminescence excitation (PLE) and emission (PL) spectra measurements. Photoelectron yield measurements are carried out using photomultiplier. At 662 keV γ-rays, photoelectron yield of 2520 phe/MeV obtained for the GYGAG: Pr (0.01%) sample is larger than that of 1810 phe/MeV obtained for BGO crystal. Light yield degradation for the GYGAG: Pr scintillators is presumably due to the energy transfer from 5d state of Pr3+ to 4f state of Gd3+ together with the concentration quenching in the Gd3+-sublattice.

  10. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    International Nuclear Information System (INIS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-01-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  11. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Science.gov (United States)

    Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

    2017-07-01

    Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

  12. Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

    International Nuclear Information System (INIS)

    Ganapathi, Kolla Lakshmi; Bhat, Navakanta; Mohan, Sangeneni

    2014-01-01

    HfO 2  thin films deposited on Si substrate using electron beam evaporation, are evaluated for back-gated graphene transistors. The amount of O 2  flow rate, during evaporation is optimized for 35 nm thick HfO 2  films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O 2  flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post-deposition annealing and post-metallization annealing in forming gas ambience (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O 2  flow rate shows the best properties as measured on MOS capacitors. To evaluate the performance of device properties, back-gated bilayer graphene transistors on HfO 2  films deposited at two O 2  flow rates of 3 and 20 SCCM have been fabricated and characterized. The transistor with HfO 2  film deposited at 3 SCCM O 2  flow rate shows better electrical properties consistent with the observations on MOS capacitor structures. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices. (paper)

  13. Determination of Gd concentration profile in UO{sub 2}–Gd{sub 2}O{sub 3} fuel pellets

    Energy Technology Data Exchange (ETDEWEB)

    Tobia, D., E-mail: dina.tobia@cab.cnea.gov.ar [Laboratorio de Resonancias Magnéticas, Centro Atómico Bariloche – CNEA and CONICET, 8400 S.C. de Bariloche (Argentina); Winkler, E.L.; Milano, J.; Butera, A. [Laboratorio de Resonancias Magnéticas, Centro Atómico Bariloche – CNEA and CONICET, 8400 S.C. de Bariloche (Argentina); Kempf, R. [División Caracterización de Combustibles Avanzados, Gerencia Ciclo Combustible Nuclear, Centro Atómico Constituyentes – CNEA, 1650 San Martín, Pcia. de Buenos Aires (Argentina); Bianchi, L.; Kaufmann, F. [Departamento de Combustibles Avanzados, Gerencia Ciclo Combustible Nuclear, Centro Atómico Constituyentes – CNEA, 1650 San Martín, Pcia. de Buenos Aires (Argentina)

    2014-08-01

    A transversal mapping of the Gd concentration was measured in UO{sub 2}–Gd{sub 2}O{sub 3} nuclear fuel pellets by electron paramagnetic resonance spectroscopy (EPR). The quantification was made from the comparison with a Gd{sub 2}O{sub 3} reference sample. The nominal concentration in the pellets is UO{sub 2}: 7.5% Gd{sub 2}O{sub 3}. A concentration gradient was found, which indicates that the Gd{sub 2}O{sub 3} amount diminishes towards the edges of the pellets. The concentration varies from (9.3 ± 0.5)% in the center to (5.8 ± 0.3)% in one of the edges. The method was found to be particularly suitable for the precise mapping of the distribution of Gd{sup 3+} ions in the UO{sub 2} matrix.

  14. Crystal structure and electronic states of Co and Gd ions in a Gd0.4Sr0.6CoO2.85 single crystal

    Science.gov (United States)

    Platunov, M. S.; Dudnikov, V. A.; Orlov, Yu. S.; Kazak, N. V.; Solovyov, L. A.; Zubavichus, Ya. V.; Veligzhanin, A. A.; Dorovatovskii, P. V.; Vereshchagin, S. N.; Shaykhutdinov, K. A.; Ovchinnikov, S. G.

    2016-02-01

    X-ray diffraction and X-ray absorption near edge structure (XANES) spectra have been measured at the Co K-edge and Gd L 3-edge in GdCoO3 and Gd0.4Sr0.6CoO2.85 cobaltites. The effect of Sr substitution on the crystal structure and electronic and magnetic states of Co3+ ions in a Gd0.4Sr0.6CoO2.85 single crystal has been analyzed. The XANES measurements at the Co K-edge have not showed a noticeable shift of the absorption edge with an increase in the concentration of Sr. This indicates that the effective valence of cobalt does not change. An increase in the intensity of absorption at the Gd L 3-edge is due to an increase in the degree of hybridization of the Gd(5 d) and O(2 p) states. The effect of hole doping on the magnetic properties results in the appearance of the ferromagnetic component and in a significant increase in the magnetic moment.

  15. Scintillation properties and X-ray irradiation hardness of Ce3+-doped Gd2O3-based scintillation glass

    International Nuclear Information System (INIS)

    Liu, Liwan; Shao, Chongyun; Zhang, Yu; Liao, Xili; Yang, Qiuhong; Hu, Lili; Chen, Danping

    2016-01-01

    Ce 3+ -doped Gd 2 O 3 -based scintillation glasses are prepared within an air or CO atmosphere. The effects of fluorine, lutetium, barium, and the melting atmosphere on the optical properties, scintillation properties and irradiation hardness are studied. Absorption spectra, luminescence spectra under UV and X-ray excitation, and the X-ray radiation-induced spectra are presented. The results show that the density can be increased by doping with fluorine, lutetium and barium. The luminescence intensity decreases after X-ray irradiation. Because of charge transfer quenching, fluorine and lutetium enhance the UV-excited and X-ray excited luminescence intensity, but barium decreases. Moreover, fluorine and lutetium are advantageous to irradiation hardness while barium is not. In addition, a non-reducing atmosphere provides a higher irradiation hardness than a reducing atmosphere. Fluorine-doped glass is promising to enhance luminescence intensity, promote irradiation hardness, and increase the density.

  16. Initial stages of ion beam-induced phase transformations in Gd2O3 and Lu2O3

    Science.gov (United States)

    Chen, Chien-Hung; Tracy, Cameron L.; Wang, Chenxu; Lang, Maik; Ewing, Rodney C.

    2018-02-01

    The atomic-scale evolution of lanthanide sesquioxides Gd2O3 and Lu2O3 irradiated with 1 MeV Kr ions at room temperature and 120 K, up to fluences of 1 × 1016 ions/cm2 (˜20 dpa), has been characterized by in situ transmission electron microscopy. At room temperature, both oxides exhibited high radiation tolerance. Irradiation did not cause any observable structural change in either material, likely due to the mobility of irradiation-induced point defects, causing efficient defect annihilation. For Gd2O3, having the larger cation ionic radius of the two materials, an irradiation-induced stacking fault structure appeared at low fluences in the low temperature irradiation. As compared with the cubic-to-monoclinic phase transformations known to result from higher energy (˜GeV) ion irradiation, Kr ions of lower energies (˜MeV) yield much lower rates of damage accumulation and thus less extensive structural modification. At a fluence of 2.5 × 1015 ions/cm2, only the initial stages of the cubic-to-monoclinic (C to B) phase transformation process, consisting of the formation and aggregation of defects, have been observed.

  17. Study on factors affecting sintering density of Gd2O3-UO2 pellets

    International Nuclear Information System (INIS)

    Zhu Shuming; Zou Congpei; Yang Jing; Yang Youqing; Mei Xiaohui

    1996-02-01

    The sintered density of Gd 2 O 3 -UO 2 burnable poison fuel pellets is an important quality index and is one of main QC items. Therefore, the efforts were made to investigate the factors affecting the sintered density of Gd 2 O 3 -UO 2 , that is, the influences of pre-treatment of Gd 2 O 3 powder, additives, mixing methods and time, sintering atmosphere, sintering temperature and time on the final density of Gd 2 O 3 UO 2 pellets contained 0, 3%, 7% and 10% (mass percentage) Gd 2 O 3 . The results show: the pre-treatment is useful for improving the distribution of Gd 2 O 3 ; the additive of ammonium oxalate will effectively adjust the density of pellets; 1750 degree C is the suitable sintering temperature. The proper process parameters have been obtained, and the Gd 2 O 3 -UO 2 pellets prepared for in-pile irradiation test meet the design requirements for the density (93.5%∼96.5% of T.D.), homogeneity, microstructure, etc. (8 refs., 3 figs., 8 tabs.)

  18. Atomic scale engineering of HfO2-based dielectrics for future DRAM applications

    International Nuclear Information System (INIS)

    Dudek, Piotr

    2011-01-01

    Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO 2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO 2 (BaHfO 3 ) films and Ti-added BaHfO 3 (BaHf 0.5 Ti 0.5 O 3 ) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO 3 (k∝38) and BaHf 0.5 Ti 0.5 O 3 (k∝90) with respect to monoclinic HfO 2 (k∝19). Meanwhile the CET values scaled down to 1 nm for BaHfO 3 and ∝0.8 nm for BaHf 0.5 Ti 0.5 O 3 with respect to HfO 2 (CET=1.5 nm). The Hf 4+ ions substitution in BaHfO 3 by Ti 4+ ions led to a significant decrease of thermal budget from 900 C for BaHfO 3 to 700 C for BaHf 0.5 Ti 0.5 O 3 . Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control. (orig.)

  19. A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

    Science.gov (United States)

    Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

    2018-06-15

    Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

  20. Raman and infrared spectroscopy of pure and doped GdAlO3 with rare earth ions

    International Nuclear Information System (INIS)

    Bagnato, V.S.

    1983-01-01

    IR and Raman measurements were carried out in pure and Eu +3 - doped GdAlO 3 with the purpose of understanding their K=O phonom modes and the Eu +3 electronic transitions. Starting from the GdAlO 3 symmetry, (D1 6 sub(2h)), the correlation method allows the classification of the number and symmetries of the modes, as well their assignement as either internal or external. Experimental and theoretical results are in good agreement and show three well defined absorption bands in GdAlO 3 . The internal modes are found to be located around 670 cm -1 (stretching) and 480 cm -1 (bending), while the external modes are around 200 cm -1 . The interaction of Eu +3 electronic states with the GdAlO 3 crystal field were studied by taking into account a small perturbative orthorrombic (C sub(s)) distortion on a crystal field with symmetry O sub(h). This small distortion lifts completely the degeneracy of the 7 F sub(J) (J=0,1,...,6) levels and allows the 7 J sub(o) → 7 F sub(J) transitions. (Author) [pt

  1. Synthesis, Characterization and Comparative Luminescence Studies of Rare-Earth-Doped Gd2O3 Nanoparticles

    Science.gov (United States)

    Pyngrope, D.; Singh, L. R.; Prasad, A. I.; Bora, A.

    2018-04-01

    A facile direct precipitation method was used for the synthesis of luminescence nanomaterial. Gd2O3 doped with rare earth element Eu3+ is synthesized by polyol route. The synthesized nanoparticles show their characteristic red emission. The nanoparticles are characterized by x-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM) and photoluminescence (PL) study. The synthesized nanoparticles are spherical particles with 30 nm size. The photoluminescence studies show the characteristic Eu3+ red emission. The PL study shows the intensity of the magnetic dipole transition ( 5 D0 \\to 7 F1 ) at 592 nm compared to that of the electronic dipole transition ( 5 D0 \\to 7 F2 ) at 615 nm. The nanomaterials can show significant application in various display devices and biomedical applications for tracking.

  2. Highly biocompatible TiO2:Gd3+ nano-contrast agent with enhanced longitudinal relaxivity for targeted cancer imaging

    Science.gov (United States)

    Chandran, Parwathy; Sasidharan, Abhilash; Ashokan, Anusha; Menon, Deepthy; Nair, Shantikumar; Koyakutty, Manzoor

    2011-10-01

    We report the development of a novel magnetic nano-contrast agent (nano-CA) based on Gd3+ doped amorphous TiO2 of size ~25 nm, exhibiting enhanced longitudinal relaxivity (r1) and magnetic resonance (MR) contrasting together with excellent biocompatibility. Quantitative T1 mapping of phantom samples using a 1.5 T clinical MR imaging system revealed that the amorphous phase of doped titania has the highest r1 relaxivity which is ~2.5 fold higher than the commercially used CA Magnevist™. The crystalline (anatase) samples formed by air annealing at 250 °C and 500 °C showed significant reduction in r1 values and MR contrast, which is attributed to the loss of proton-exchange contribution from the adsorbed water and atomic re-arrangement of Gd3+ ions in the crystalline host lattice. Nanotoxicity studies including cell viability, plasma membrane integrity, reactive oxygen stress and expression of pro-inflammatory cytokines, performed on human primary endothelial cells (HUVEC), human blood derived peripheral blood mononuclear cells (PBMC) and nasopharyngeal epidermoid carcinoma (KB) cell line showed excellent biocompatibility up to relatively higher doses of 200 μg ml-1. The potential of this nano-CA to cause hemolysis, platelet aggregation and plasma coagulation were studied using human peripheral blood samples and found no adverse effects, illustrating the possibility of the safe intravenous administration of these agents for human applications. Furthermore, the ability of these agents to specifically detect cancer cells by targeting molecular receptors on the cell membrane was demonstrated on folate receptor (FR) positive oral carcinoma (KB) cells, where the folic acid conjugated nano-CA showed receptor specific accumulation on cell membrane while leaving the normal fibroblast cells (L929) unstained. This study reveals that the Gd3+ doped amorphous TiO2 nanoparticles having enhanced magnetic resonance contrast and high biocompatibility is a promising candidate for

  3. Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

    Science.gov (United States)

    Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

    2018-03-01

    In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

  4. Analysis Influence of Mixing Gd2O3 in the Silicide Fuel Element to Core Excess Reactivity of RSG-GAS

    International Nuclear Information System (INIS)

    Susilo, Jati

    2004-01-01

    Gadolinium (Gd 2 O 3 ) is a burnable poison material mixed in the pin fuel element of the LWR core used to decrease core excess reactivity. In this research, analysis influence of mixing Gd 2 O 3 in the silicide fuel element to excess reactivity of the RSG-GAS core had been done. Equivalent cell of the equilibrium core developed by L.E.Strawbridge from Westing House Co. burn-up calculation has been done using SRAC-PIJ computer code achieve infinite multiplication factor (k x ). Value of Gd 2 O 3 concentration in the fuel element (pcm) showed by mass ratio of Gd 2 O 3 (gram) to that U 3 Si 2 (gram) times 10 5 , that is 0 pcm ∼ 100 pcm. From the calculation results analysis showed that Gd 2 O 3 concentration added should be considered. because a large number of Gd 2 O 3 will result in not achieving criticality at the Beginning Of Cycle. The maximum concentration of Gd 2 O 3 for RSG-GAS equilibrium fueled silicide 2.96 grU/cc is 80 pcm or 52.02 mgram/fuel plate. Maximum reduction of core excess reactivity due to mixing of Gd 2 O 3 in the RSG-GAS silicide fuels was around 1.502 %Δk/k, and hence not achieving the standard nominal excess reactivity for RSG-GAS core using high density of U 3 Si 2 -Al fuel. (author)

  5. The borosulfates K{sub 4}[BS{sub 4}O{sub 15}(OH)], Ba[B{sub 2}S{sub 3}O{sub 13}], and Gd{sub 2}[B{sub 2}S{sub 6}O{sub 24}

    Energy Technology Data Exchange (ETDEWEB)

    Gross, Peter; Kirchhain, Arno; Hoeppe, Henning A. [Universitaet Augsburg, Institut fuer Physik (Germany)

    2016-03-18

    K{sub 4}[BS{sub 4}O{sub 15}(OH)], Ba[B{sub 2}S{sub 3}O{sub 13}], and Gd{sub 2}[B{sub 2}S{sub 6}O{sub 24}] were obtained by a new synthetic approach. The strategy involves initially synthesizing the complex acid H[B(HSO{sub 4}){sub 4}] which is subsequently reacted in an open system with anhydrous chlorides of K, Ba, and Gd to the respective borosulfates and a volatile molecule (HCl). Furthermore, protonated borosulfates should be accessible by appropriate stoichiometry of the starting materials, particularly in closed systems, which inhibit deprotonation of H[B(HSO{sub 4}){sub 4}] via condensation and dehydration. This approach led to the successful synthesis of the first divalent and trivalent metal borosulfates (Ba[B{sub 2}S{sub 3}O{sub 13}] with band-silicate topology and Gd{sub 2}[B{sub 2}S{sub 6}O{sub 24}] with cyclosilicate topology) and the first hydrogen borosulfate K{sub 4}[BS{sub 4}O{sub 15}(OH)]. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Crystallization of 21.25Gd2O3-63.75MoO3-15B2O3 glass induced by femtosecond laser at the repetition rate of 250 kHz

    International Nuclear Information System (INIS)

    Zhong, M.J.; Han, Y.M.; Liu, L.P.; Zhou, P.; Du, Y.Y.; Guo, Q.T.; Ma, H.L.; Dai, Y.

    2010-01-01

    We report the formation of β'-Gd 2 (MoO 4 ) 3 (GMO) crystal on the surface of the 21.25Gd 2 O 3 -63.75MoO 3 -15B 2 O 3 glass, induced by 250 kHz, 800 nm femtosecond laser irradiation. The morphology of the modified region in the glass was clearly examined by scanning electron microscopy (SEM). By micro-Raman spectra, the laser-induced crystals were confirmed to be GMO phases and it is found that these crystals have a strong dependence on the number and power of the femtosecond laser pulses. When the irradiation laser power was 900 mW, not only the Raman peaks of GMO crystals but also some new peaks at 214 cm -1 , 240 cm -1 , 466 cm -1 , 664 cm -1 and 994 cm -1 which belong to the MoO 3 crystals were observed. The possible mechanisms are proposed to explain these phenomena.

  7. Positron annihilation study on the superconductivity of Gd-doped YBCO system

    International Nuclear Information System (INIS)

    Chen Zhenping; Su Yuling; Xue Yuncai; Liu Haizeng; Gong Shicheng; Zhao Jingxun; Li Xigui

    2006-01-01

    To make clear the influence of magnetic rare-earth ion Gd 3+ doping in the Y site on crystal structure and localized electron structure of YBCO system, the Gd-doped Y 1-x Gd x Ba 2 Cu 3 O 7-δ (x=0-1.0) systems were studied systematically by the positron annihilation technique and X-ray diffraction (XRD). The XRD analysis reveals that Gd 3+ with bigger radius doping in Y site makes the crystal parameters and crystal volume increase, while all the samples remain the single orthorhombic phase as YBa 2 Cu 3 O 7-δ (YBCO) system does. The temperature dependence of resistance measurement shows that T c is above 90 K for all samples, and T c increases with increasing Gd 3+ content. The positron experiment indicates that the localized electronic density n e decreases with increasing Gd 3+ content. (authors)

  8. Formation and nitrile hydrogenation performance of Ru nanoparticles on a K-doped Al2O3 surface.

    Science.gov (United States)

    Muratsugu, Satoshi; Kityakarn, Sutasinee; Wang, Fei; Ishiguro, Nozomu; Kamachi, Takashi; Yoshizawa, Kazunari; Sekizawa, Oki; Uruga, Tomoya; Tada, Mizuki

    2015-10-14

    Decarbonylation-promoted Ru nanoparticle formation from Ru3(CO)12 on a basic K-doped Al2O3 surface was investigated by in situ FT-IR and in situ XAFS. Supported Ru3(CO)12 clusters on K-doped Al2O3 were converted stepwise to Ru nanoparticles, which catalyzed the selective hydrogenation of nitriles to the corresponding primary amines via initial decarbonylation, the nucleation of the Ru cluster core, and the growth of metallic Ru nanoparticles on the surface. As a result, small Ru nanoparticles, with an average diameter of less than 2 nm, were formed on the support and acted as efficient catalysts for nitrile hydrogenation at 343 K under hydrogen at atmospheric pressure. The structure and catalytic performance of Ru catalysts depended strongly on the type of oxide support, and the K-doped Al2O3 support acted as a good oxide for the selective nitrile hydrogenation without basic additives like ammonia. The activation of nitriles on the modelled Ru catalyst was also investigated by DFT calculations, and the adsorption structure of a nitrene-like intermediate, which was favourable for high primary amine selectivity, was the most stable structure on Ru compared with other intermediate structures.

  9. Magnetic, electrical and structural properties of the Re-doped ruthenocuprate Ru1−xRexSr2GdCu2Oy

    International Nuclear Information System (INIS)

    Corredor, L.T.; Albino Aguiar, J.; Landínez Téllez, D.A.; Pureur, P.; Mesquita, F.; Roa-Rojas, J.

    2015-01-01

    Highlights: • We investigated the effect of the dilution of magnetic Ru sub-lattice of RuSr 2 GdCu 2 O 8 . • We synthesized the doped compound Rui x Re x Sr 2 GdCu 2 O y , for 3%, 6%, 9% and 12% Re. • Re would affect the electron coupling: just 3 and 6% samples were superconductor. • Superconductivity emergence strongly affects magnetic properties of 3 and 6% samples. • A weak ferromagnetic component is consistent with a globally antiferromagnetic system. - Abstract: Despite the discovery of new superconductors classes, high-Tc oxides continue to be a current topic, because of their complex phase diagrams and doping-dependant effects (allowing one to investigate the interaction between orbitals), as well as structural properties such as lattice distortion and charge ordering, among many others. Ruthenocuprates are magnetic superconductors in which the magnetic transition temperature is much higher than the critical superconducting temperature, making them unique compounds. With the aim of investigating the dilution of the magnetic Ru sub-lattice, we proposed the synthesis of the Ru 1−x Re x Sr 2 GdCu 2 O y ruthenocuprate-type family, adapting the known two-step process (double perovskite + CuO) by directly doping the double perovskite, thus obtaining the perovskite compound Sr 2 GdRu 1−x Re x O y , which represents a new synthesis process to the best of our knowledge. Our samples were structurally characterized through X-ray diffraction, and the patterns were analysed via Rietveld refinement. A complete magnetic characterization as a function of temperature and applied field, as well as transport measurements were carried out. We discuss our results in the light of the two-lattice model for ruthenocuprates, and a relation between RuO 2 (magnetic) and CuO 2 (superconductor) sub-lattices can clearly be observed

  10. Electron paramagnetic resonance and AC susceptibility studies of Mn and Gd doped 1:2:3 superconductors

    International Nuclear Information System (INIS)

    La Robina, M.A.

    1997-01-01

    For many years superconductivity was considered to be a low temperature phenomenon occurring below ∼ 25K. All this changed in April 1986 when J. G. Bednorz and K. A. Muller showed that the oxide La 2-x Ba x CuO 4 becomes a superconductor at ∼ 30K. Later in December 1986 the oxides La 2-x Sr x CuO 4 and La 2-x Ba x CuO 4 synthesised under high pressure, were shown to superconduct at ∼ 40K and ∼ 50K, respectively. Finally in February 1987, Chu synthesised the classic superconductor YBa 2 Cu 3 O 6.8 , the so-called 1:2:3 material, which has a critical temperature circa 92K. In this thesis, electron paramagnetic resonance (EPR) and susceptibility measurements are reported on various superconductors. In 1987 Bowden et al., showed that pure phase 1:2:3 samples are characterised by an absence of Cu EPR signals. This contrasts sharply with the Green phase material, Y 2 Ba 1 Cu 1 O 5 , which shows a very large EPR signal with a g eff of 2.08. In an attempt to induce EPR signals, Mn doped 1:2:3 samples have been synthesised and characterised with EPR , AC susceptibility, XRD and SEM measurements. It is shown that Mn EPR signals are not evident in the Mn doped samples with a g eff of 2.09. Also, below T c the EPR signals of the lightly doped Mn samples vanish. It is argued that this is due to fluxoids motion within the superconductor, which gives rise to very large non-reproducible signals. It is suggested that the signals originate from Cu, impurity contaminants and multiple phases produced when the 1:2:3 superconductor is doped with Manganese (author)

  11. Low-frequency dielectric dispersion and magnetic properties of La, Gd modified Pb(Fe1/2Ta1/2)O3 multiferroics

    International Nuclear Information System (INIS)

    Choudhury, R.N.P.; Rodriguez, C.; Bhattacharya, P.; Katiyar, R.S.; Rinaldi, C.

    2007-01-01

    Pb(Fe 1/2 Ta 1/2 )O 3 (PFT) modified by rare-earth (La and Gd) ions has been synthesized in a single phase using a double-stage synthesis (i.e., Columbite) technique. Scanning electron micrographs (SEM) of the pellet samples have shown a significant change in their grain size and uniform distribution of Gd/La at the Fe-sites. The room temperature X-ray structural analysis shows that the reported cubic (or tetragonal) structure of PFT has been distorted to a monoclinic system on substitution of La/Gd at the Fe-site. Detailed studies of dielectric properties of the above compound on La/Gd substitution have shown strong dielectric dispersion at low frequency (i.e. relaxor behavior) with drastic change in transition temperature. Magnetic characterization shows that though the PFT sample displays an antiferromagnetic transition at ∼150 K, the rare-earth ions-substituted samples do not. Furthermore, temperature dependence of magnetization measurements shows that spin glass transition observed in PFT at low temperatures (5-20 K) does not exist in the La and Gd substituted PFT. Doping of Gd in PFT increases the sample magnetization, especially at low temperature

  12. A template-free solvothermal synthesis and photoluminescence properties of multicolor Gd2O2S:xTb3+, yEu3+ hollow spheres

    Science.gov (United States)

    Sang, Xiaotong; Xu, Guangxi; Lian, Jingbao; Wu, Nianchu; Zhang, Xue; He, Jiao

    2018-06-01

    The multicolor Gd2O2S:xTb3+, yEu3+ hollow spheres were successfully synthesized via a template-free solvothermal route without the use of surfactant from commercially available Ln (NO3)3·6H2O (Ln = Gd, Tb and Eu), absolute ethanol, ethanediamine and sublimed sulfur as the starting materials. The phase, structure, particle morphology and photoluminescence (PL) properties of the as-obtained products were investigated by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM) and photoluminescence spectra. The influence of synthetic time on phase, structure and morphology was systematically investigated and discussed. The possible formation mechanism depending on synthetic time t for the Gd2O2S phase has been presented. These results demonstrate that the Gd2O2S hollow spheres could be obtained under optimal condition, namely solvothermal temperature T = 220 °C and synthetic time t = 16 h. The as-obtained Gd2O2S sample possesses hollow sphere structure, which has a typical size of about 2.5 μm in diameter and about 0.5 μm in shell thickness. PL spectroscopy reveals that the strongest emission peak for the Gd2O2S:xTb3+ and the Gd2O2S:yEu3+ samples is located at 545 nm and 628 nm, corresponding to 5D4→7F5 transitions of Tb3+ ions and 5D0→7F2 transitions of Eu3+ ions, respectively. The quenching concentration of Tb3+ ions and Eu3+ ions is 7%. In the case of Tb3+ and Eu3+ co-doped samples, when the concentration of Tb3+ or Eu3+ ions is 7%, the optimum concentration of Eu3+ or Tb3+ ions is determined to be 1%. Under 254 nm ultraviolet (UV) light excitation, the Gd2O2S:7%Tb3+, the Gd2O2S:7%Tb3+,1%Eu3+ and the Gd2O2S:7%Eu3+ samples give green, yellow and red light emissions, respectively. And the corresponding CIE coordinates vary from (0.3513, 0.5615), (0.4120, 0.4588) to (0.5868, 0.3023), which is also well consistent with their luminous photographs.

  13. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    KAUST Repository

    Aravindh, S. Assa

    2014-12-19

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  14. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    KAUST Repository

    Aravindh, S. Assa; Schwingenschlö gl, Udo; Roqan, Iman S.

    2014-01-01

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  15. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  16. Neutronics feasibility of using Gd2O3 particles in VVER-1000 fuel assembly

    International Nuclear Information System (INIS)

    Hoang Van Khanh; Hoang Thanh Phi Hung; Tran Hoai Nam

    2016-01-01

    Neutronics feasibility of using Gd 2 O 3 particles for controlling excess reactivity of VVER-1000 fuel assembly has been investigated. The motivation is that the use of Gd 2 O 3 particles would increase the thermal conductivity of the UO 2 +Gd 2 O 3 fuel pellet which is one of the desirable characteristics for designing future high burnup fuel. The calculation results show that the Gd 2 O 3 particles with the diameter of 60 µm could control the reactivity similarly to that of homogeneous mixture with the same amount of Gd 2 O 3 . The power densities at the fuel pin with Gd 2 O 3 particles increase by about 10-11%, leading to the decrease of the power peak and a slightly flatter power distribution. The power peak appears at the periphery pins at the beginning of burnup process which is decreased by 0.9 % when using Gd 2 O 3 particles. Further work and improvement are being planned to optimize the high power peaking at the beginning of burnup. (author)

  17. Structural, magnetic, and electrical properties of Gd-doped BiFeO3 nanoparticles with reduced particle size

    International Nuclear Information System (INIS)

    Lotey, Gurmeet Singh; Verma, N. K.

    2012-01-01

    Pure and Gd-doped BiFeO 3 nanoparticles have been synthesized by sol–gel method. The significant effects of size and Gd-doping on structural, electrical, and magnetic properties have been investigated. X-ray diffraction study reveals that the pure BiFeO 3 nanoparticles possess rhombohedral structure, but with 10% Gd-doping complete structural transformation from rhombohedral to orthorhombic has been observed. The particle size of pure and Gd-doped BiFeO 3 nanoparticles, calculated using Transmission electron microscopy, has been found to be in the range 25–15 nm. Pure and Gd-doped BiFeO 3 nanoparticles show ferromagnetic character, and the magnetization increases with decrease in particle size and increase in doping concentration. Scanning electron microscopy study reveals that grain size decreases with increase in Gd concentration. Well-saturated polarization versus electric field loop is observed for the doped samples. Leakage current density decreases by four orders by doping Gd in BiFeO 3 . The incorporation of Gd in BiFeO 3 enhances spin as well as electric polarization at room temperature. The possible origin of enhancement in these properties has been explained on the basis of dopant and its concentration, phase purity, small particle, and grain size.

  18. Effect of Gd{sup 3+} substitution on structural, magnetic, dielectric and optical properties of nanocrystalline CoFe{sub 2}O{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, Seema [Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, Noida 201307 (India); Kumar, Manoj, E-mail: mkumar.phy@gmail.com [Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, Noida 201307 (India); Chhoker, Sandeep [Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, Noida 201307 (India); Kumar, Arun; Singh, Mahavir [Department of Physics, Himachal Pradesh University, Shimla 5 (India)

    2017-03-15

    Nanoparticles of CoGd{sub x}Fe{sub 2−x}O{sub 4} with x=0.0, 0.03, 0.05, 0.07, 0.10 and 0.15 were synthesized by co-precipitation method. Gd{sup 3+} substitution effect on different properties of nanocrystalline CoFe{sub 2}O{sub 4} has been studied. X-ray diffraction and Raman spectroscopy confirmed the formation of single phase cubic mixed spinel structure. Cation distribution has been proposed from Rietveld refined data. Mössbauer spectra at room temperature showed two ferrimagnetic Zeeman sextets with one superparamagnetic doublet. Mössbauer parameters suggested that Gd{sup 3+} ions occupy the octahedral site in CoFe{sub 2}O{sub 4}. Room temperature magnetic measurements exhibited that the saturation magnetization decreased from 91 emu/gm to 54 emu/gm for x=0.0 to 0.15 samples. The coercivity decreased from 1120 Oe to 340 Oe for x=0.0 to 0.07 samples and increased from 400 Oe to 590 Oe for x=0.10 and 0.15 samples, respectively. Raman analysis showed that the degree of inversion with Gd{sup 3+} substitution supporting the variation of coercivity. Electron spin resonance spectra revealed the dominancy of superexchange interactions in these samples. Optical band gap measurement suggested that all samples are indirect band gap materials and band gap has been decreased with Gd{sup 3+} substitution. Both dielectric constant and dielectric loss is found to decrease because of the decrease in hopping rate with the Gd{sup 3+} substitution for Fe{sup 3+} at the octahedral sites. Low dielectric loss suggested the applicability of Gd{sup 3+} doped CoFe{sub 2}O{sub 4} nanoparticles for high frequency microwave device applications. - Highlights: • Gd{sup 3+} ions were successfully added in to the spinel lattice of CoFe{sub 2}O{sub 4}. • Magnetic hysteresis loss is influenced by Gd{sup 3+} doping. • All doped samples exhibit normal dielectric dispersion behaviour of spinel ferrites. • UV–vis diffuse spectroscopy concludes band gap is reduced by Gd{sup 3+} doping.

  19. Inhomogeneous ferrimagnetic-like behavior in Gd2/3Ca1/3MnO3 single crystals

    International Nuclear Information System (INIS)

    Haberkorn, N.; Larregola, S.; Franco, D.; Nieva, G.

    2009-01-01

    We present a study of the magnetic properties of Gd 2/3 Ca 1/3 MnO 3 single crystals at low temperatures, showing that this material behaves as an inhomogeneous ferrimagnet. In addition to small saturation magnetization at 5 K, we have found history dependent effects in the magnetization and the presence of exchange bias. These features are compatible with microscopic phase separation in the clean Gd 2/3 Ca 1/3 MnO 3 system studied

  20. Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

    2017-05-01

    In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

  1. Li{sub 3}Gd{sub 3}Te{sub 2}O{sub 12}:Eu{sup 3+}- an intense red phosphor for solid state lighting applications

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, Hansnath [Department of Chemistry, Indian Institute of Technology Madras, Chennai 600036 (India); Asiri Naidu, S. [Department of Chemistry, Rajiv Gandhi University of Knowledge Technologies, Nuzvid, Andhra Pradesh 521202 (India); Varadaraju, U.V., E-mail: varada@iitm.ac.in [Department of Chemistry, Indian Institute of Technology Madras, Chennai 600036 (India)

    2017-02-15

    Li{sub 3}Gd{sub 33x}Eu{sub 3x}Te{sub 2}O{sub 12} (x=0.05−1.0) phases with garnet structure were synthesized by high temperature solid state reaction and the photoluminescence properties were investigated. The appearance of bands due to intra 4 f transitions of Gd{sup 3+} in the excitation spectra recorded by monitoring the 612 nm emission line of the activator indicates Gd{sup 3+}→Eu{sup 3+} energy transfer in this host lattice. Under 395 nm excitation, the electric dipole transition is predominant in the emission spectrum of Eu{sup 3+} and is in agreement with the C{sub 2} point group (noncentrosymmetric) of the EuO{sub 8} polyhedron. The critical concentration of the Eu{sup 3+} activator in this series was found to be 0.6 (x=0.2) above which, concentration quenching occurs. The emission intensity of the phosphor composition, Li{sub 3}Gd{sub 2.4}Eu{sub 0.6}Te{sub 2}O{sub 12} is ~4 times that of the commercial sample of Y{sub 2}O{sub 3}:Eu{sup 3+} phosphor. - Highlights: • New Eu{sup 3+} doped garnet. • Intense electric dipole emission. • Gd{sup 3+}→Eu{sup 3+} energy transfer.

  2. Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

    International Nuclear Information System (INIS)

    Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

    2014-01-01

    In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

  3. Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

    Science.gov (United States)

    Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

    2013-03-01

    By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

  4. High reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime

    KAUST Repository

    Alias, Mohd Sharizal; Alatawi, Abdullah; Wong, Ka Chun; Tangi, Malleswararao; Holguin Lerma, Jorge Alberto; Stegenburgs, Edgars; Shakfa, Mohammad Khaled; Ng, Tien Khee; Rahman, Abdul; Alyamani, Ahmed; Ooi, Boon S.

    2018-01-01

    A distributed Bragg reflector (DBR) composed of Y2O3-doped HfO2 (YDH)/SiO2 layers with high reflectivity spectrum centered at a wavelength of ~240 nm is deposited using radio-frequency magnetron sputtering. Before the DBR deposition, optical

  5. Effect of Gd2O3 doping on structure and boron volatility of borosilicate glass sealants in solid oxide fuel cells-A study on the La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode

    Science.gov (United States)

    Zhang, Qi; Tan, Shengwei; Ren, Mengyuan; Yang, Hsiwen; Tang, Dian; Chen, Kongfa; Zhang, Teng; Jiang, San Ping

    2018-04-01

    Boron volatility is one of the most important properties of borosilicate-based glass sealants in solid oxide fuel cells (SOFCs), as boron contaminants react with lanthanum-containing cathodes, forming LaBO3 and degrading the activity of SOFCs. Here, we report that the reaction between the volatile boron and a La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode during polarization can be significantly reduced by doping aluminoborosilicate glass with Gd2O3. Specifically, the Gd cations in glass with 2 mol.% Gd2O3 dissolve preferentially in the borate-rich environment to form more Gd-metaborate structures and promote the formation of calcium metaborate (CaB2O4); they also condense the B-O network after heat treatment, which suppresses poisoning by boron contaminants on the LSCF cathode. The results provide insights into design and development of a reliable sealing glass for SOFC applications.

  6. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    Energy Technology Data Exchange (ETDEWEB)

    Aravindh, S. Assa; Schwingenschloegl, Udo, E-mail: udo.schwingenschloegl@kaust.edu.sa, E-mail: iman.roqan@kaust.edu.sa; Roqan, Iman S., E-mail: udo.schwingenschloegl@kaust.edu.sa, E-mail: iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2014-12-21

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn{sub 48}O{sub 48} nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high T{sub C} in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  7. Magnetic, electrical and structural properties of the Re-doped ruthenocuprate Ru{sub 1−x}Re{sub x}Sr{sub 2}GdCu{sub 2}O{sub y}

    Energy Technology Data Exchange (ETDEWEB)

    Corredor, L.T. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Programa de Pós-Graduação em Ciências de Materiais-CCEN, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Grupo de Física de Nuevos Materiales, Departamento de Física, Universidad Nacional de Colombia, Bogotá D.C. (Colombia); Albino Aguiar, J. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Programa de Pós-Graduação em Ciências de Materiais-CCEN, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Landínez Téllez, D.A. [Grupo de Física de Nuevos Materiales, Departamento de Física, Universidad Nacional de Colombia, Bogotá D.C. (Colombia); Pureur, P.; Mesquita, F. [Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970 Porto Alegre, RS (Brazil); Roa-Rojas, J. [Grupo de Física de Nuevos Materiales, Departamento de Física, Universidad Nacional de Colombia, Bogotá D.C. (Colombia)

    2015-06-15

    Highlights: • We investigated the effect of the dilution of magnetic Ru sub-lattice of RuSr{sub 2}GdCu{sub 2}O{sub 8}. • We synthesized the doped compound Rui{sub x}Re{sub x}Sr{sub 2}GdCu{sub 2}O{sub y}, for 3%, 6%, 9% and 12% Re. • Re would affect the electron coupling: just 3 and 6% samples were superconductor. • Superconductivity emergence strongly affects magnetic properties of 3 and 6% samples. • A weak ferromagnetic component is consistent with a globally antiferromagnetic system. - Abstract: Despite the discovery of new superconductors classes, high-Tc oxides continue to be a current topic, because of their complex phase diagrams and doping-dependant effects (allowing one to investigate the interaction between orbitals), as well as structural properties such as lattice distortion and charge ordering, among many others. Ruthenocuprates are magnetic superconductors in which the magnetic transition temperature is much higher than the critical superconducting temperature, making them unique compounds. With the aim of investigating the dilution of the magnetic Ru sub-lattice, we proposed the synthesis of the Ru{sub 1−x}Re{sub x}Sr{sub 2}GdCu{sub 2}O{sub y} ruthenocuprate-type family, adapting the known two-step process (double perovskite + CuO) by directly doping the double perovskite, thus obtaining the perovskite compound Sr{sub 2}GdRu{sub 1−x}Re{sub x}O{sub y}, which represents a new synthesis process to the best of our knowledge. Our samples were structurally characterized through X-ray diffraction, and the patterns were analysed via Rietveld refinement. A complete magnetic characterization as a function of temperature and applied field, as well as transport measurements were carried out. We discuss our results in the light of the two-lattice model for ruthenocuprates, and a relation between RuO{sub 2} (magnetic) and CuO{sub 2} (superconductor) sub-lattices can clearly be observed.

  8. Structural and magnetic properties of Gd-doped ZnO

    KAUST Repository

    Bantounas, Ioannis

    2014-01-01

    We use density functional theory to investigate structural and magnetic properties of Gd doped ZnO, accounting for the impurity 4f states using the GGA + U method. (i) We calculate the binding energy of forming [Gd-Gd] dimers, [VO - GdZn] and [VZn - GdZn] complexes and find that while the formation of [VZn - GdZn] is favourable, [GdZn - GdZn] and [VO - GdZn] complexes are less likely to form. Next, (ii) we investigate the spacial arrangement of two (and three) GdZn impurities in a 3 × 3 × 2 supercell and find that the magnetic impurities are energetically favourable when occupying distant lattice sites. Finally, we study the nature of interactions between the magnetic impurities (iii) for Gd in nearest-neighbour and non-nearest-neighbour Zn sites, (iv) in the presence of Zn or O vacancies, and (v) with and without additional charge carriers. Our results show mainly paramagnetic behaviour. In a few cases, e.g. magnetic impurities occupying in-plane nearest-neighbour zinc sites with n-type carrier doping, weak ferromagnetic coupling is observed. This magnetic ordering is of the order of a few meV and can be easily destroyed by thermal fluctuations. We thus expect Gd:ZnO to show paramagnetic behaviour at temperatures approaching room temperature.

  9. Phosphorus recovery from biogas slurry by ultrasound/H2O2 digestion coupled with HFO/biochar adsorption process.

    Science.gov (United States)

    He, Xuemeng; Zhang, Tao; Ren, Hongqiang; Li, Guoxue; Ding, Lili; Pawlowski, Lucjan

    2017-02-01

    Phosphorus (P) recovery from biogas slurry has recently attracted considerable interest. In this work, ultrasound/H 2 O 2 digestion coupled with ferric oxide hydrate/biochar (HFO/biochar) adsorption process was performed to promote P dissolution, release, and recovery from biogas slurry. The results showed that the optimal total phosphorus release efficiency was achieved at an inorganic phosphorus/total phosphorus ratio of 95.0% at pH 4, 1mL of added H 2 O 2 , and ultrasonication for 30min. The P adsorption by the HFO/biochar followed pseudo second-order kinetics and was mainly controlled by chemical processes. The Langmuir-Freundlich model matched the experimental data best for P adsorption by HFO/biochar at 298 and 308K, whereas the Freundlich model matched best at 318K. The maximum amount of P adsorbed was 220mg/g. The process was endothermic, spontaneous, and showed an increase in disorder at the solid-liquid interface. The saturated adsorbed HFO/biochar continually releases P and is most suitable for use in an alkaline environment. The amount of P released reached 29.1mg/g after five extractions. P mass balance calculation revealed that 11.3% of the total P can be made available. Copyright © 2016. Published by Elsevier Ltd.

  10. Optical emission, vibrational feature, and shear-thinning aspect of Tb3+-doped Gd2O3 nanoparticle-based novel ferrofluids irradiated by gamma photons

    Science.gov (United States)

    Paul, Nibedita; Hazarika, Samiran; Saha, Abhijit; Mohanta, Dambarudhar

    2013-10-01

    The present work reports on the spectroscopic and rheological properties of un-exposed and gamma (γ-) irradiated rare earth (RE) oxide nanoparticle-based ferrofluids (FFs). The FFs were produced by dispersing surfactant coated terbium (Tb3+)-doped gadolinium oxide (Gd2O3) nanoparticles in the ethanol medium and later on they were subjected to energetic γ-irradiation (1.25 MeV) at select doses (97 Gy and 2.635 kGy). The synthesized RE oxide nanoparticles were of ˜7 nm size and having a cubic crystal structure, as predicted from transmission electron microscopy and x-ray diffraction studies. Fourier transformed infra-red (FT-IR) spectra showed an adequate blue shift of the Gd-O vibrational stretching mode from a wavenumber value of ˜558 cm-1, for the un-irradiated sample to a value of ˜540 cm-1 corresponding to the irradiated sample (2.635 kGy). In contrast, photoluminescence spectra have revealed modification of defect states along with Tb3+ assisted radiative transitions. The rheology measurements have illustrated unusual shear thinning behavior of the FFs, with an apparently improved power index (s) value from 0.34 to 0.50, obtained for increasing γ-dose cases. The variation of the decay parameter with irradiation dose, as predicted from the nature of apparent viscosity curves, is attributed to the defect formation, role of impurity ions (Tb3+), and weakening of inter nanoparticle bonding. The unusual properties of the novel RE oxide based FFs may find scope in sealing and shielding elements in the radiation environment including accelerator and other related zones.

  11. Luminescence and energy transfer properties of Eu{sup 3+} and Gd{sup 3+} in ZrO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Villabona-Leal, E.G. [Posgrado en Ciencias Aplicadas, Facultad de Ciencias, Universidad Autónoma de San Luis Potosí. Av. Salvador Nava, 078290 San Luis Potosí (Mexico); Diaz-Torres, L.A.; Desirena, H. [Grupo de Espectroscopia de Materiales Avanzados y Nanoestrcuturados (EMANA), Centro de Investigaciones en Óptica, A. P.1-948, Gto. 37150 León (Mexico); Rodríguez-López, J.L. [División de Materiales Avanzados, Instituto Potosino de Investigación Científica y Tecnológica, A.C., Camino Presa San José, Lomas 4a Secc, 78216 San Luis Potosí (Mexico); Pérez, Elías [Instituto de Física, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, 78000 San Luis Potosí (Mexico); Meza, Octavio, E-mail: omeza@ifuap.buap.mx [Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apartado Postal J-48, Puebla 72570 (Mexico)

    2014-02-15

    Red luminescence emission in ZrO2:Gd{sup 3+}–Eu{sup 3+} nanocrystal under 250 nm radiation excitation is achieved. These materials exhibit a tetragonal phase that is retained by the presence of lanthanide ions. Thus, a study of the optical properties as a function of the dopant concentration was been carried out without the deleterious effects of having segregation of other crystalline phases. We analyze the emission and lifetime curves as a function of dopant concentration through a rate equation simulation, finding an excellent fitting. As results, the nonradiative and radiative relaxation constants, as well as a quantitative estimation of the energy transfer processes among Eu{sup 3+}, Gd{sup 3+} and O{sup 2−} ions are reported for the first time. The proposed model can be extended (or applicable) to explain the fluorescence dynamics in other nanomaterials doped with Eu{sup 3+} and Gd{sup 3+} under UV excitation. -- Highlights: • ZrO{sub 2} nanocrystal exhibits a tetragonal phase in the presence of Eu and Gd dopants. • Emission and lifetimes as a function of dopant concentration were analyzed by rate equation model. • Quantitative estimation of the energy transfer processes among Eu{sup 3+}, Gd{sup 3+} and O{sup 2−} ions are reported.

  12. Theoretical prediction of ion conductivity in solid state HfO2

    Science.gov (United States)

    Zhang, Wei; Chen, Wen-Zhou; Sun, Jiu-Yu; Jiang, Zhen-Yi

    2013-01-01

    A theoretical prediction of ion conductivity for solid state HfO2 is carried out in analogy to ZrO2 based on the density functional calculation. Geometric and electronic structures of pure bulks exhibit similarity for the two materials. Negative formation enthalpy and negative vacancy formation energy are found for YSH (yttria-stabilized hafnia) and YSZ (yttria-stabilized zirconia), suggesting the stability of both materials. Low activation energies (below 0.7 eV) of diffusion are found in both materials, and YSH's is a little higher than that of YSZ. In addition, for both HfO2 and ZrO2, the supercells with native oxygen vacancies are also studied. The so-called defect states are observed in the supercells with neutral and +1 charge native vacancy but not in the +2 charge one. It can give an explanation to the relatively lower activation energies of yttria-doped oxides and +2 charge vacancy supercells. A brief discussion is presented to explain the different YSH ion conductivities in the experiment and obtained by us, and we attribute this to the different ion vibrations at different temperatures.

  13. Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

    International Nuclear Information System (INIS)

    Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

    2006-01-01

    We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

  14. Long lasting behavior of Gd2O2S:Eu3+ phosphor synthesized by hydrothermal routine

    International Nuclear Information System (INIS)

    Hang Tao; Liu Qun; Mao Dali; Chang Chengkang

    2008-01-01

    This paper reports the detailed preparation process and afterglow properties of Eu 3+ activated long lasting Gd 2 O 2 S phosphor by hydrothermal routine. Rod-like Gd(OH) 3 were firstly synthesized by hydrothermal method to serve as the precursor. Long lasting Gd 2 O 2 S:Eu 3+ ,Ti 4+ ,Mg 2+ phosphor was obtained by calcinating the precursor with co-activators and S powder. It was found from the results that the hydrothermally prepared Gd(OH) 3 revealed a rod-like morphology, while the calcinated Gd 2 O 2 S:Eu 3+ ,Ti 4+ ,Mg 2+ phosphor showed a round granular shape. The morphological change can be explained by the etching effect of the melt that was formed by the carbonate and S powder during the high temperature calcination. The obtained Gd 2 O 2 S:Eu 3+ ,Ti 4+ ,Mg 2+ phosphor produced a red emission upon 243 nm UV excitation, which is a typical emission of Eu 3+ from 5 D j to 7 F j states. Long lasting behavior was observed after the UV source was switched off, due to the formation of electron traps with suitable trap depth within the matrix by the codoped Ti 4+ and Mg 2+ ions

  15. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics

    OpenAIRE

    Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C.; Kim, Hyoungsub

    2017-01-01

    We studied the impact of H2 pressure during post-metallization annealing on the chemical composition of a HfO2/Al2O3 gate stack on a HCl wet-cleaned In0.53Ga0.47As substrate by comparing the forming gas annealing (at atmospheric pressure with a H2 partial pressure of 0.04?bar) and H2 high-pressure annealing (H2-HPA at 30?bar) methods. In addition, the effectiveness of H2-HPA on the passivation of the interface states was compared for both p- and n-type In0.53Ga0.47As substrates. The decomposi...

  16. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati

    2014-03-14

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery capacity at a current density of 150 mAg -1 after 100 cycles is 548 and 853 mAhg-1 for the uncoated and HfO2-coated anodes, respectively. Material analysis reveals that the HfO2 layers are amorphous in nature and conformably coat the SnO2-based anodes. In addition, the analysis reveals that ALD HfO2 not only protects the SnO2-based anodes from irreversible reactions with the electrolyte and buffers its volume change, but also chemically interacts with the SnO2 anodes to increase battery capacity, despite the fact that HfO2 is itself electrochemically inactive. The amorphous nature of HfO2 is an important factor in explaining its behavior, as it still allows sufficient Li diffusion for an efficient anode lithiation/delithiation process to occur, leading to higher battery capacity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Analyses of desorbed H2O with temperature programmed desorption technique in sol-gel derived HfO2 thin films

    International Nuclear Information System (INIS)

    Shimizu, H.; Nemoto, D.; Ikeda, M.; Nishide, T.

    2009-01-01

    Hafnium oxide (HfO 2 ) is a promising material for the gate insulator in highly miniaturized silicon (Si) ultra-large-scale-integration (ULSI) devices (32 nm and beyond). In the field chemistry, a sol-gel processing has been used to fabricate HfO 2 thin film with the advantages of low cost, relative simplicity, and easy control of the composition of the layers formed. Temperature-programmed desorption (TPD) has been used not only for analyzing adsorbed gases on the surfaces of bulk sol-gel-derived HfO 2 of sol-gel-derived HfO 2 thin film fired at 350, 450, 550 and 700 deg C in sol-gel derived HfO 2 films in air is investigated using TPD, and also the material characterization of HfO 2 thin films is evaluated by X-ray diffraction (XRD) method. The dielectric constant of the films was also estimated using the capacitance-voltage (C-V) method. TPD is essentially a method of analyzing desorped gases from samples heated by infra-red light as a function of temperature under vacuum conditions using a detector of quadruple mass spectroscopy (QMS). Sol-gel-derived HfO 2 films were fabricated on 76-mm-diameter Si(100) wafers as follows. Hafnia sol solutions were prepared by dissolving HfCl 4 in NH 4 OH solution, followed by the of HCOOH. (author)

  18. Physical characteristics of Gd2O3-UO2 fuel in LWR

    International Nuclear Information System (INIS)

    Matsuura, Shojiro; Kobayashi, Iwao; Furuta, Toshiro; Toba, Masao; Tsuda, Katsuhiro.

    1981-12-01

    A series of critical experiments in light water lattice were carried out on five kinds of Gadolinia-Uranium dioxide (Gd 2 O 3 -UO 2 ) test fuel rods containing 0.0, 0.05, 0.25, 1.50, 3.00 weight % of Gd 2 O 3 in Gd 2 O 3 -UO 2 . Reactivity effect, power distribution, neutron flux distribution, and temperature coefficient were measured for three types of lattices which were in shapes of annular, rectangular parallele-piped, and JPDR mockup core. The theoretical values corresponding to the measured ones were obtained by means of the design method for the FTA which is the test fuel assembly with Gd 2 O 3 -UO 2 rods for JPDR, and the accuracy was checked. In general, the calculated values were in good agreement with the measured ones. Besides, the following characteristics of Gd 2 O 3 -UO 2 rods are recognized both in measurement and calculation, i.e. (1) the effect due to gadolinia on reactivity, power distribution, and thermal neutron flux distribution are steeply saturating; the gadolinia content of only 1.50 weight % is enough to reach the almost saturated condition, (2) the relative power becomes 20% to that of normal fuel under the saturated condition, (3) the relation between the negative reactivity and the power depression effect due to gadolinia is almost linear, and (4) the interference on power depression between the adjacent gadolinia loaded rods is almost negligible, and that on reactivity effect is 15% at most. (author)

  19. Luminescence rise time in self-activated PbWO4 and Ce-doped Gd3Al2Ga3O12 scintillation crystals

    CERN Document Server

    E. Auffray; A. Borisevich; V. Gulbinas; A. Fedorov; M. Korjik; M.T. Lucchini; V. Mechinsky; S. Nargelas; E. Songaila; G. Tamulaitis; A. Vaitkevičius; S. Zazubovich

    2016-01-01

    The time resolution of scintillation detectors of ionizing radiation is one of the key parameters sought for in the current and future high-energy physics experiments. This study is encouraged by the necessity to find novel detection methods enabling a sub-10-ps time resolution in scintillation detectors and is focused on the exploitation of fast luminescence rise front. Time-resolved photoluminescence (PL) spectroscopy and thermally stimulated luminescence techniques have been used to study two promising scintillators: self-activated lead tungstate (PWO, PbWO4) and Ce-doped gadolinium aluminum gallium garnet (GAGG, Gd3Al2Ga3O12). A sub-picosecond PL rise time is observed in PWO, while longer processes in the PL response in GAGG:Ce are detected and studied. The mechanisms responsible for the PL rise time in self-activated and doped scintillators are under discussion.

  20. Neutronic analysis of Gd2O3 as burnable poison

    International Nuclear Information System (INIS)

    Lecot, C.A.

    1990-01-01

    For the reactors core design, the use of burnable poisons is one of the options for the control of in excess reactivity and the power form factor. As alternative procedures, the absorbing material may be included in pellets of an inert material or in fuel pellets. Besides, a cladding material and the locations of the fuel elements must be chosen for the first case. The CAREM reactor core design foresees the use of gadolinium oxide (Gd 2 O 3 ) as burnable poison. In this work, a comparative study was made, from the neutronic point of view, among the following alternatives for the poisons location: a) Gd 2 O 3 bars supports in alumina (Al 2 O 3 ), sheathed in steel; b) Gd 2 O 3 bars supports in alumina sheathed in Zry-4; c) Gd 2 O 3 in uranium dioxide (UO 2 ) fuel pellets. (Author) [es

  1. Light emission efficiency and imaging performance of Lu{sub 2}O{sub 3}:Eu nanophosphor under X-ray radiography conditions: Comparison with Gd{sub 2}O{sub 2}S:Eu

    Energy Technology Data Exchange (ETDEWEB)

    Seferis, I. [Faculty of Chemistry, Wroclaw University, 14F Joliot-Curie Street, 50-383 Wroclaw (Poland); Department of Medical Physics, Medical School, University of Patras, 265 00 Patras (Greece); Michail, C.; Valais, I. [Department of Biomedical Engineering, Technological Educational Institute of Athens, 122 10 Athens (Greece); Zeler, J. [Faculty of Chemistry, Wroclaw University, 14F Joliot-Curie Street, 50-383 Wroclaw (Poland); Liaparinos, P.; Fountos, G.; Kalyvas, N.; David, S. [Department of Biomedical Engineering, Technological Educational Institute of Athens, 122 10 Athens (Greece); Stromatia, F. [Department of Radiology and Nuclear Medicine, “IASO” General Hospital, Mesogion 264, 15562 Holargos (Greece); Zych, E. [Faculty of Chemistry, Wroclaw University, 14F Joliot-Curie Street, 50-383 Wroclaw (Poland); Kandarakis, I., E-mail: kandarakis@teiath.gr [Department of Biomedical Engineering, Technological Educational Institute of Athens, 122 10 Athens (Greece); Panayiotakis, G. [Department of Medical Physics, Medical School, University of Patras, 265 00 Patras (Greece)

    2014-07-01

    Nanocrystallic europium-activated lutetium oxide (Lu{sub 2}O{sub 3}:Eu) is a strong candidate for use in digital medical imaging applications, due to its spectroscopic and structural properties. The aim of the present study was to investigate the imaging and efficiency properties of a 33.3 mg/cm{sup 2} Lu{sub 2}O{sub 3}:Eu scintillating screen coupled to a high resolution RadEye HR CMOS photodetector under radiographic imaging conditions. Since Lu{sub 2}O{sub 3}:Eu emits light in the red wavelength range, the light emission efficiency and the imaging performance were compared with results for a Gd{sub 2}O{sub 2}S:Eu phosphor screen. Parameters such as the Absolute Efficiency (AE), the X-ray Luminescence Efficiency (XLE), and the Detector Quantum Gain (DQG), were investigated. The imaging characteristics of Lu{sub 2}O{sub 3}:Eu nanophosphor screen were investigated in terms of the Modulation Transfer Function (MTF), the Normalized Noise Power Spectrum (NNPS) and the Detective Quantum Efficiency (DQE). It was found that Lu{sub 2}O{sub 3}:Eu nanophosphor has higher AE and XLE by a factor of 1.32 and 1.37 on average, respectively, in the whole radiographic energy range in comparison with the Gd{sub 2}O{sub 2}S:Eu screen. DQG was also found higher in the energy range from 50 kVp to 100 kVp and comparable thereafter. The imaging quality of Lu{sub 2}O{sub 3}:Eu nanophosphor coupled to the CMOS sensor was found to outmatch in any aspect in comparison with the Gd{sub 2}O{sub 2}S:Eu screen. These results indicate that Lu{sub 2}O{sub 3}:Eu nanophosphor could be considered for further research in order to be used in medical imaging applications. - Highlights: • AE and XLE of Lu{sub 2}O{sub 3}:Eu nanophosphor were higher by a factor of 1.32 and 1.37 than Gd{sub 2}O{sub 2}S:Eu. • DQG was higher from 50 to 100 kVp and comparable thereafter. • Imaging performance of Lu{sub 2}O{sub 3}:Eu/CMOS was better than that of Gd{sub 2}O{sub 2}S:Eu/CMOS.

  2. Dependences on RE of superconducting properties of transition metal co-doped (Ca, RE)FeAs_2 with RE = La–Gd

    International Nuclear Information System (INIS)

    Yakita, H.; Ogino, H.; Sala, A.; Okada, T.; Yamamoto, A.; Kishio, K.; Iyo, A.; Eisaki, H.; Shimoyama, J.

    2015-01-01

    Highlights: • We synthesized Co or Ni co-doped (Ca, RE)FeAs_2 with RE = La–Gd. • Co or Ni co-doping improved superconducting properties of all (Ca, RE)FeAs_2 samples. • T_c of (Ca, RE)FeAs_2 decreased with decreasing ionic radii of RE"3"+. • Eu doped samples showed exceptionally low T_c and long interlayer distance. • Long interlayer distance of Eu doped samples suggested co-existence of Eu"2"+ and Eu"3"+. - Abstract: Dependence of superconducting properties of (Ca, RE)(Fe, TM)As_2 [(Ca, RE)112, TM: Co, Ni)] on RE elements (RE = La–Gd) was systematically investigated. Improvement of superconducting properties by Co or Ni co-doping was observed for all (Ca, RE)112, which is similar to Co-co-doped (Ca, La)112 or (Ca, Pr)112. T_c of Co-co-doped samples decreased from 38 K for RE = La to 29 K for RE = Gd with decreasing ionic radii of RE"3"+. However, Co-co-doped (Ca, Eu)112 showed exceptionally low T_c = 21 K probably due to the co-existence of Eu"3"+ and Eu"2"+ suggested by longer interlayer distance d_F_e_–_F_e of (Ca, Eu)112 than other (Ca, RE)112.

  3. Charge compensation mechanisms in U{sub 1-x}Gd{sub x}O{sub 2} and Th{sub 1-x}Gd{sub x}O{sub 2-x/2} studied by X-ray Absorption Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bès, R., E-mail: rene.bes@aalto.fi [Department of Applied Physics, Aalto University, P.O. Box 14100, FI-00076 Aalto (Finland); Pakarinen, J.; Baena, A. [Belgian Nuclear Research Centre (SCK-CEN), Institute for Nuclear Materials Science, Boeretang 200, B-2400 Mol (Belgium); Conradson, S. [Synchrotron SOLEIL, Ligne de Lumière MARS, L' Orme des Merisiers, Saint Aubin, BP 48, F-91192 Gif-sur-Yvette Cedex (France); Verwerft, M. [Belgian Nuclear Research Centre (SCK-CEN), Institute for Nuclear Materials Science, Boeretang 200, B-2400 Mol (Belgium); Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FI-00076 Aalto (Finland)

    2017-06-15

    The charge compensation mechanisms in U{sub 1-x}Gd{sub x}O{sub 2} and Th{sub 1-x}Gd{sub x}O{sub 2-x/2} have been systematically studied using X-ray Absorption Spectroscopy (XAS) upon gradually increasing the Gd content. Gd doped nuclear fuels are widely used for optimizing the fresh core neutronics, yet when Gd{sup 3+} is substituted into U{sup 4+} or Th{sup 4+} lattice position in UO{sub 2} or ThO{sub 2}, respectively, charge must be compensated for charge neutrality. In U{sub 1-x}Gd{sub x}O{sub 2} the general hypothesis has been that the U{sup 4+} will oxidise to U{sup 5+}/U{sup 6+} while in Th{sub 1-x}Gd{sub x}O{sub 2-x/2} the fixed Th{sup 4+} valence requires generation of O vacancies. Our XAS results for a series of technologically relevant Gd contents (x = 0.04 to 0.14) in U{sub 1-x}Gd{sub x}O{sub 2} clearly demonstrate that upon increasing the Gd content U{sup 5+} is formed inducing slight increase in the U coordination number and contraction for the U-O distances while the Gd local environment remains virtually unchanged. For the Th{sub 1-x}Gd{sub x}O{sub 2-x/2} larger Gd fractions were applied (x = 0.10 to 0.34). Nonetheless, both Gd and Th local environments show changes upon increasing the Gd content; the average Gd-O and Th-O distances decrease gradually and the Gd and Th coordination numbers follow the expected trend considering the O vacancy formation to obtain charge neutrality. Finally, comparison to Gd{sub 2}O{sub 3} allowed us to propose that one of the Gd L{sub 3}-edge XANES resonance features is directly connected to the generation of O vacancies.

  4. Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

    International Nuclear Information System (INIS)

    Zhang, R.; Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S.

    2016-01-01

    We have demonstrated a low temperature formation (300 °C) of higher-k HfO 2 using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO x interfacial layer. It is found that the cubic phase is dominant in the HfO 2 film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO 2 film on a 1-nm-thick GeO x form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO 2 can be induced by the formation of six-fold crystalline GeO x structures in the underlying GeO x interfacial layer

  5. Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors

    Science.gov (United States)

    Kamijyo, Masahiro; Onozuka, Tomotake; Yoshida, Naoto; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

    2004-09-01

    Microcrystalline ZrO2 and HfO2 thin film capacitors were prepared by anodizing sputter-deposited Zr and Hf films. The thermal degradation behavior of both anodized capacitors was clarified by the measurement of their capacitance properties and Auger depth profiles before and after heat treatment in air. As a result, it is confirmed that the heat-resistance property of the HfO2 anodized capacitor is superior to that of the ZrO2 capacitor. In addition, it is revealed that the thermal degradation of the ZrO2 anodized capacitor is caused by the diffusion of Zr atoms from the underlying layer into the ZrO2 anodized layer, while that of the HfO2 anodized capacitor is caused by the diffusion of oxygen atoms from the anodized layer into the underlying Hf layer.

  6. Issues concerning the determination of solubility products of sparingly soluble crystalline solids. Solubility of HfO2(cr)

    International Nuclear Information System (INIS)

    Rai, Dhanpat; Kitamura, Akira; Rosso, Kevin M.; Sasaki, Takayuki; Kobayashi, Taishi

    2016-01-01

    Solubility studies were conducted with HfO 2 (cr) solid as a function HCl and ionic strength ranging from 2.0 to 0.004 mol kg -1 . These studies involved (1) using two different amounts of the solid phase, (2) acid washing the bulk solid phase, (3) preheating the solid phase to 1400 C, and (4) heating amorphous HfO 2 (am) suspensions to 90 C to ascertain whether the HfO 2 (am) converts to HfO 2 (cr) and to determine the solubility from the oversaturation direction. Based on the results of these treatments it is concluded that the HfO 2 (cr) contains a small fraction of less crystalline, but not amorphous, material [HfO 2 (lcr)] and this, rather than the HfO 2 (cr), is the solubility-controlling phase in the range of experimental variables investigated in this study. The solubility data are interpreted using both the Pitzer and SIT models and they provide log 10 K 0 values of -(59.75±0.35) and -(59.48±0.41), respectively, for the solubility product of HfO 2 (lcr)[HfO 2 (lcr) + 2H 2 O ↔ Hf 4+ + 4OH - ]. The log 10 of the solubility product of HfO 2 (cr) is estimated to be < -63. The observation of a small fraction of less crystalline higher solubility material is consistent with the general picture that mineral surfaces are often structurally and/or compositionally imperfect leading to a higher solubility than the bulk crystalline solid. This study stresses the urgent need, during interpretation of solubility data, of taking precautions to make certain that the observed solubility behavior for sparingly-soluble solids is assigned to the proper solid phase.

  7. Measurements of defect structures by positron annihilation lifetime spectroscopy of the tellurite glass TeO2-P2O5-ZnO-LiNbO3 doped with ions of rare earth elements: Er3+, Nd3+ and Gd3+

    Science.gov (United States)

    Golis, E.; Yousef, El. S.; Reben, M.; Kotynia, K.; Filipecki, J.

    2015-12-01

    The objective of the study was the structural analysis of the TeO2-P2O5-ZnO-LiNbO3 tellurite glasses doped with ions of the rare-earth elements: Er3+, Nd3+ and Gd3+ based on the PALS (Positron Annihilation Lifetime Spectroscopy) method of measuring positron lifetimes. Values of positron lifetimes and the corresponding intensities may be connected with the sizes and number of structural defects, such as vacancies, mono-vacancies, dislocations or pores, the sizes of which range from a few angstroms to a few dozen nanometres. Experimental positron lifetime spectrum revealed existence of two positron lifetime components τ1 and τ2. Their interpretation was based on two-state positron trapping model where the physical parameters are the annihilation velocity and positron trapping rate.

  8. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

    2012-01-01

    Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

  9. Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

    Science.gov (United States)

    Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

    2016-10-01

    In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

  10. Synthesis and luminescence properties of BaTiO3:RE (RE = Gd , Dy ...

    Indian Academy of Sciences (India)

    thermoluminescence (TL) properties of BaTiO3 samples doped with Gd3+, Dy3+, Tb3+ and Lu3+ were investigated. ... electron microscope using an accelerating voltage of 20 kV. .... doping of 1% mole Gd3+ ion into the BaTiO3 compound.

  11. Growth, characterization, and waveguide lasing of Yb3+, Lu3+, Gd3+ co-doped KY(WO4)2 thin layers

    NARCIS (Netherlands)

    Aravazhi, S.; Geskus, D.; Günther, D.; Worhoff, Kerstin; Pollnau, Markus

    2009-01-01

    Monoclinic crystals of KY(WO4)2 (KYW) doped with different rare-earth ions are among the highly promising materials for building compact solid-state lasers. We report the liquid phase epitaxy (LPE) growth of 3-5 µm thick KYW:Gd3+, Lu3+, Yb3+ layers for Yb3+ concentrations of 1.2, 1.7, and 2.4 mol%

  12. Optical properties of Ho3+-doped NaGd(WO4)2 crystal for laser materials

    International Nuclear Information System (INIS)

    Wang, Hongyan; Li, Jianfu; Jia, Guohua; You, Zhenyu; Yang, Fugui; Wei, Yanping; Wang, Yan; Zhu, Zhaojie; Lu, Xiuai; Tu, Chaoyang

    2007-01-01

    Holmium doped sodium gadolinium tungstate crystals with sizes of about O20 mm x 40 mm were grown successfully by the Czochralski technique along the (0 0 1) orientation. Polarized absorption spectra, fluorescence spectra and fluorescence decay curve of Ho 3+ -doped NaGd(WO 4 ) 2 have been recorded at room temperature. Based on the Judd-Ofelt theory, three intensity parameters were obtained. The spectroscopic parameters of this crystal such as the oscillator strengths, radiative transition probabilities, radiative lifetimes as well as the branching ratios were calculated. The fluorescence lifetime τ f of the 5 S 2 level was measured to be 5 μs

  13. Fuel densification study about uranium- 7% nanostructured gadolinium (Gd2O3)

    International Nuclear Information System (INIS)

    Serafim, Antonio da Costa

    2016-01-01

    The sintering process of UO 2 -Gd 2 O 3 pellets has been investigated in this work for its importance in the nuclear industry and for its complex behavior during sintering. Sintering blockage occurs from 1300 deg C upwards, when densification is shifted toward higher temperatures and the final density obtained is decreased. This research includes the development of nuclear fuel for power reactors in order to increase its efficiency inside the reactor core by raising the burnup. The use of nanosized Gd 2 O 3 was studied in the range from 10 to 30nm, which was added to UO 2 , trying to verify the occurrence of characteristic sintering blockage due to Kirkendall sintering effect observed in previous research. The samples were produced by dry mechanical mixture of UO 2 powder and 7% Gd 2 O 3 (macro- and nanostructured). The powders were compacted and the pellets were sintered at 1700 deg C under H 2 atmosphere. These results indicate that the characteristic blockage during sintering in macrostructured system UO 2 -Gd 2 O 3 occurred in the temperature range of 1300-1500 deg C, which slows down the densification. It was observed a less intense effect when using the nanostructured Gd 2 O 3 ; it took place at the temperature of 900 deg C, then facilitating to get an additional densification. The dilatometric tests indicated shrinkage of 22, 18 and 20% respectively in UO 2 pellets, macrostructured UO 2 -7% Gd 2 O 3 and nanostructured UO 2 -7%Gd 2 O 3 . We detected 2% higher shrinkage, when nanostructured Gd 2 O 3 was used instead of macrostructured Gd 2 O 3 , which is used commercially. Then, the nanostructured results showed more adequate density for nuclear fuel usage. (author)

  14. Microstructures and mechanical properties of Gd{sub 2}Zr{sub 2}O{sub 7}/ZrO{sub 2}(3Y) ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Lei [Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, Shenyang, Liaoning 110819 (China); Key Laboratory for Advanced Ceramics and Application of Shenyang, Shenyang University of Chemical Technology, Shenyang, Liaoning 110142 (China); Ma, Weimin, E-mail: maleisy2003@163.com [Key Laboratory for Advanced Ceramics and Application of Shenyang, Shenyang University of Chemical Technology, Shenyang, Liaoning 110142 (China); Sun, Xudong, E-mail: xdsun@mail.neu.edu.cn [Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, Shenyang, Liaoning 110819 (China); Ji, Lianyong; Liu, Jianan; Hang, Kai [Key Laboratory for Advanced Ceramics and Application of Shenyang, Shenyang University of Chemical Technology, Shenyang, Liaoning 110142 (China)

    2015-09-25

    Highlights: • Gd{sub 2}Zr{sub 2}O{sub 7}/ZrO{sub 2}(3Y) composites were prepared using vacuum sintering. • The phase composition and microstructure are studied. • Gd{sub 2}Zr{sub 2}O{sub 7}/ZrO{sub 2}(3Y) materials show superior mechanical properties. • The solid solution strengthening and stress-induced phase transformation toughening mechanism are proposed. • Two kinds of mechanisms explain the improvement of mechanical properties. - Abstract: Gd{sub 2}Zr{sub 2}O{sub 7}/ZrO{sub 2}(3Y) composite ceramics were prepared by vacuum sintering using Gd{sub 2}Zr{sub 2}O{sub 7} and ZrO{sub 2}(3Y) nanoparticles. The ceramics were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), the three-point-bending technique and single-edge-notched-beam tests. The effect of various proportions of ZrO{sub 2}(3Y) on the phase composition, microstructure, bending strength and fracture toughness of the final Gd{sub 2}Zr{sub 2}O{sub 7}/ZrO{sub 2}(3Y) composite ceramics was also analyzed. The change from m-ZrO{sub 2} to t-ZrO{sub 2} phase contents, before and after fracture, was measured using XRD quantitative phase analysis. The results confirm that, with the increasing content of ZrO{sub 2}(3Y), a phase transition from solid solution to saturated precipitation occurs and the bending strength and fracture toughness of the samples increase gradually. When the content of ZrO{sub 2}(3Y) reached 95 vol.%, the Gd{sub 2}Zr{sub 2}O{sub 7}/ZrO{sub 2}(3Y) composite ceramics had a bending strength of 547 MPa and a fracture toughness of 5.5 MPa m{sup 1/2}, indicating that stress-induced phase transformation toughening was an efficient way to increase the mechanical properties of the Gd{sub 2}Zr{sub 2}O{sub 7} ceramics.

  15. Intense 2.7 µm emission and structural origin in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass.

    Science.gov (United States)

    Guo, Yanyan; Li, Ming; Hu, Lili; Zhang, Junjie

    2012-01-15

    The 2.7 μm emission properties in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass were investigated in the present Letter. An intense 2.7 μm emission in Er3+-doped bismuthate glass was observed. It is found that Er3+-doped bismuthate glass possesses high spontaneous transition probability A (65.26 s(-1)) and large 2.7 μm emission cross section σ(em) (9.53×10(-21) cm2) corresponding to the stimulated emission of Er3+:4I11/2→4I13/2 transition. The emission characteristic and energy transfer process upon excitation of a conventional 980 nm laser diode in bismuthate glass were analyzed. Additionally, the structure of bismuthate glass was analyzed by the Raman spectrum. The advantageous spectroscopic characteristics of Er3+ single-doped bismuthate glass together with the prominent thermal property indicate that bismuthate glass might become an attractive host for developing solid-state lasers around 2.7 μm.

  16. Angular dependant micro-ESR characterization of a locally doped Gd3+:Al2O3 hybrid system for quantum applications

    Science.gov (United States)

    Wisby, I. S.; de Graaf, S. E.; Gwilliam, R.; Adamyan, A.; Kubatkin, S. E.; Meeson, P. J.; Tzalenchuk, A. Ya.; Lindstrom, T.

    Rare-earth doped crystals interfaced with superconducting quantum circuitry are an attractive platform for quantum memory and transducer applications. Here we present a detailed characterization of a locally implanted Gd3+ in Al2O3 system coupled to a superconducting micro-resonator, by performing angular dependent micro-electron-spin-resonance (micro-ESR) measurements at mK temperatures. The device is fabricated using a hard Si3N4 mask to facilitate a local ion-implantation technique for precision control of the dopant location. The technique is found not to degrade the internal quality factor of the resonators which remains above 105 (1). We find the measured angular dependence of the micro-ESR spectra to be in excellent agreement with the modelled Hamiltonian, supporting the conclusion that the dopant ions are successfully integrated into their relevant lattice sites whilst maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our micro-resonator, emphasising the need for controllable local implantation. 1 Wisby et al. Appl. Phys. Lett. 105, 102601 (2014)

  17. Hypoeutectic melting in the UO{sub 2-x}-Gd{sub 2}O{sub 3} system

    Energy Technology Data Exchange (ETDEWEB)

    Journeau, Christophe, E-mail: christophe.journeau@cea.fr [CEA, DEN, SMTA, LPMA, Cadarache, F13108 St Paul lez Durance (France); Fouquart, Pascal [CEA, DEN, SMTA, LPMA, Cadarache, F13108 St Paul lez Durance (France); Domenger, Renaud; Allegri, Patrick [CEA, DEN, SGCS, LMAC, Marcoule, F30207 Bagnols sur Cèze (France)

    2017-05-15

    Gadolinium is one of the best neutron absorber materials and its use can be considered as a sacrificial material in a Sodium Fast Reactor core catcher in view of preventing recriticallity. A series of experiments have been conducted in the VITI induction-heated facility to study the melting in the UO{sub 2-x}-Gd{sub 2}O{sub 3} system with 60–87 mol% gadolinia. These experiments have indicated that the eutectic composition is around 92 mol% Gd{sub 2}O{sub 3} – 8 mol% UO{sub 2-x} and that the liquidus line is close to that of Popov et al. [Atom. Energ. 110 (2011) pp. 221–229] phase diagram. - Highlights: •Melting/Solidification experiments with UO{sub 2-x} and Gd{sub 2}O{sub 3} in reducing environment. •Eutectic composition around 92 mol% Gd{sub 2}O{sub 3}-8 mol% UO{sub 2-x}. •UO{sub 2-x} - Gd{sub 2}O{sub 3} liquidus line seems close to that of the pseudobinary phase diagram proposed by Popov et al. •Results will support the assessment of Gd{sub 2}O{sub 3} as a sacrificial material to mitigate criticality risk in SFR core catchers.

  18. Temperature and pressure dependence of the optical properties of Cr3+-doped Gd3Ga5O12 nanoparticles.

    Science.gov (United States)

    Martín-Rodríguez, R; Valiente, R; Rodríguez, F; Bettinelli, M

    2011-07-01

    Since the crystal-field strength at the Cr(3+) site is very close to the excited-state crossover (ESCO), this work investigates the optical properties of Cr(3+)-doped Gd(3)Ga(5)O(12) (GGG) nanoparticles as a function of temperature and pressure in order to establish the effect of the ESCO on the optical behaviour of nanocrystalline GGG. Luminescence, time-resolved emission and lifetime measurements have been performed on GGG:0.5% Cr(3+) nanoparticles in the 25-300 K temperature range, as well as under hydrostatic pressure up to 20 GPa. We show how low temperature and high pressure progressively transforms Cr(3+)(4)T(2) --> (4)A(2) broadband emission into a ruby-like (2)E --> (4)A(2) luminescence. This behaviour together with the lifetime dependence on pressure and temperature are explained on the basis of the spin-orbit interaction between the (4)T(2) and (2)E states of Cr(3+).

  19. Suspended HfO2 photonic crystal slab on III-nitride/Si platform

    International Nuclear Information System (INIS)

    Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

    2014-01-01

    We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

  20. Synthesis and study of bifunctional core–shell nanostructures based on ZnO@Gd{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Babayevska, Nataliya, E-mail: natbab@amu.edu.pl; Nowaczyk, Grzegorz; Jarek, Marcin; Załęski, Karol; Jurga, Stefan

    2016-07-05

    Bifunctional nanostructures based on ZnO nanoparticles (NPs) with controlled Gd{sub 2}O{sub 3} shell thicknesses were obtained by simple low-temperature methods (sol–gel technique and seed deposition method). The morphology, nanostructure, phase and chemical composition as well as luminescent and magnetic properties of the obtained core–shell nanostructures were investigated by transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy (EDS), x-ray diffraction (XRD) techniques, optical spectroscopy, and SQUID magnetometer. As-obtained ZnO NPs are highly monodispersed and crystalline with mean particles size distribution of about 7 nm. Modification of the ZnO NPs surface by Gd{sub 2}O{sub 3} shell leads to an increase of the ZnO particles size up to 80–160 nm and the formation the Gd{sub 2}O{sub 3} shell with size of 2–4 nm. The dependence of the phase composition, luminescent and magnetic properties on Gd{sub 2}O{sub 3} content are also discussed. - Highlights: • The bifunctional ZnO@Gd{sub 2}O{sub 3} nanostructures were obtained by sol–gel technique. • ZnO@Gd{sub 2}O{sub 3} have intensive luminescence in the visible range under 325 nm excitation. • Gd{sup 3+} content allows to control paramagnetic properties of the ZnO@Gd{sub 2}O{sub 3}. • ZnO@Gd{sub 2}O{sub 3} nanostructures are potential objects for application in medicine.

  1. Scintillation and optical properties of Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Masaki, E-mail: masaki.mori.mz4@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Nakauchi, Daisuke; Okada, Go [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Fujimoto, Yutaka [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Kawaguchi, Noriaki [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Koshimizu, Masanori [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Yanagida, Takayuki [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan)

    2017-06-15

    The single crystals of 0, 0.6, 1, 1.6 and 2 mol% Ce doped CaGdAl{sub 3}O{sub 7} (Ce:CGAM) were grown by the Floating Zone method, and investigated on photoluminescence (PL) and scintillation properties. In the PL spectra, a broad emission appeared over 380–500 nm under 280 and 360 nm excitations with the quantum yield of 33.8–38.8%. Under a vacuum ultraviolet excitation (90 nm) using a synchrotron source, non-doped CGAM single crystal showed broad emissions over 250–650 nm. The PL decay time profiles followed a monotonic exponential decay with a decay time constant of around 33 ns. The scintillation spectra were similar to those of PL. All of the samples exhibited a clear photoabsorption peak and Compton edge in the pulse height spectra measured under {sup 137}Cs γ-ray irradiation, and the absolute scintillation light yield (LY) was highest for the 2% Ce-doped sample with the value of 3300±300 ph/MeV. The scintillation decay profiles were approximated by a third order exponential decay function, and the extracted decay time of Ce{sup 3+} emission component was around 36–44 ns. Among all the samples, 2%Ce:CGAM single crystal sample showed the best afterglow level as a scintillator under X-ray irradiation. - Highlights: •Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} single crystals were synthesized by the FZ method. •Optical and scintillation properties of Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} were investigated. •Photoabsorption peak in a pulse height spectrum was clearly observed under γ-rays.

  2. The Pr and Ca substitution in GdBa2Cu3O7-8

    International Nuclear Information System (INIS)

    Shakeri, H.; Akhavan, M.

    2002-01-01

    The granular Gd 1 -x-zPr x Ca z Ba 2 Cu 3 O 7 -8 (Gd Pr Ca-123) high-temperature cuprate samples with 0.0≤x≤0.3 and 0.0≤z≤0.35 are prepared by standard solid state reaction and characterized by XRD and SEM techniques. The BaCuO 2 and impurity phases are less than 1% in the samples having high levels of Pr and Ca concentrations. The electrical resistivity measurements show a nonlinear reduction in T c (x,z=etc) versus x. Moreover, the T c (z) curve with x=0 is nonlinear and a plateau appears at z≅0.05-0.015. For Pr-Ca-doped samples with a constant concentration of Pr, T c increases with the increase of Ca up to an optimum value of Ca doping and then in decreases. Based on these observations, we suggest that hole filling and hole localization the main effects of Pr ion substitution. The magnetic measurements indicate that the value of H C 1 is in the order of 10 m T. The magnetoresistance measurements have been measured and analyzed. The superconducting transition region is broadened by the application of magnetic field. The experimental data near the on sen of superconductivity are fitted with the Ambegakor and Halperin (A H) phase-slip model. We observe that the A H parameter, γ(H), depends not only on the temperature and the magnetic field, but also on the Pr and Ca ions concentrations. It is observed that the critical current density increases with Ca substitution and decreases with pr substitution in Gd-123 system. We suggest that the pr ion substitution probably enhances the weak link, but the Ca ion acts as flux pinning center in the Gd Pr Ca-123 system

  3. Photoluminescence characteristics of reddish-orange Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Jun Ho; Bandi, Vengala Rao; Grandhe, Bhaskar Kumar; Jang, Ki Wan; Lee, Ho Sueb [Changwon National University, Changwon (Korea, Republic of); Yi, Soung Soo [Silla University, Busan (Korea, Republic of); Jeong, Jung Hyun [Pukyong National University, Busan (Korea, Republic of)

    2011-02-15

    Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors were synthesized by using a conventional solid state reaction method at 750 .deg. C. The emission spectra of KZnGd{sub 1-x}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} with {lambda}{sub ex} = 395 nm and KZnGd{sub 1-y}(PO{sub 4}){sub 2}:Sm{sup 3+}{sub y} with {lambda}{sub ex} = 403 nm phosphors showed intense {sup 5}D{sub 0} {yields} {sup 7}F{sub 1}, {sup 4}G{sub 5/2} {yields} {sup 6}H{sub 7/2} emission transitions at 595 nm and 599 nm, respectively. The optimum relative intensity of the KZnGd{sub 1-x-y}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} , Sm{sup 3+}{sub y} phosphor was obtained for the doping concentrations of (x = 0.09, y = 0.01). In addition, the temperature dependent luminescence intensity of the synthesized phosphors was investigated and the thermal stability of the KZnGd(PO{sub 4}){sub 2}:Eu{sup 3+} phosphor was found to be higher than that of standard YAG:Ce{sup 3+} and KZnGd{sub 1-x-y}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} Sm{sup 3+}{sub y} under near ultra-violet (NUV) light emitting diode excitation (LED). Therefore, we suggest that Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors should be efficient for different red-color-emitting display device applications and NUV-LED-based white-light-emitting diodes.

  4. Comparing the physical properties of Pr/Gd and Pr/Ce substitutions in Ru(Gd1.5Ce0.5)Sr2Cu2O10- δ

    Science.gov (United States)

    Khajehnezhad, A.; Nikseresht, N.; Hadipour, H.; Akhavan, M.

    2008-06-01

    We have compared the electrical and magnetic properties of Ru(Gd1.5- x Pr x )Ce0.5Sr2Cu2O10- δ (Pr/Gd samples) with x = 0.0, 0.01, 0.03, 0.033, 0.035, 0.04, 0.05, 0.06, 0.1 and RuGd1.5(Ce0.5- x Pr x ) Sr2 Cu2O10- δ (Pr/Ce samples) with x = 0.0, 0.01, 0.03, 0.05, 0.08, 0.1, 0.15, 0.2 prepared by the standard solid-state reaction technique. We obtained the XRD patterns for different samples with various x. The lattice parameters versus x for different substitutions have been obtained from Rietveld analysis. To determine how the magnetic and superconducting properties of these layered cuprate systems can be affected by Pr substitution, the resistivity, and magnetoresistivity, with H ext varying from 0.0 to 15 kOe, have been measured at various temperatures. Superconducting transition temperature T c and magnetic transition T irr , have been obtained through resistivity and ac susceptibility measurements. The T c suppression due to Pr/Gd and Pr/Ce substitutions show competition between pair breaking by magnetic impurities, hole doping due to different valances of ions, difference in ionic radii, and oxygen stoichiometry. Pr/Gd substitution suppresses superconductivity more rapidly than for Pr/Ce, showing that the effect of hole doping and magnetic impurity pair breaking is stronger than the difference in ionic radii. In Pr/Gd substitution, the small difference between the ionic radii of Pr3+,4+ and Gd3+, and absorption of more oxygen due to the higher valence of Pr with respect to Gd, decreases the mean Ru-Ru distance, and as a result, the magnetic exchange interaction becomes stronger with the increase of x. However, Pr/Ce substitution has the opposite effect. The magnetic parameters such as H c , obtained through magnetization measurements versus applied magnetic field isotherm at 77 K and room temperatures, become stronger with x in Pr/Gd and weaker with x in Pr/Ce substitution.

  5. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

    Science.gov (United States)

    Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

    2018-01-01

    We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

  6. Design of high quality doped CeO2 solid electrolytes with nanohetero structure

    International Nuclear Information System (INIS)

    Mori, T.; Ou, D.R.; Ye, F.; Drennan, J.

    2006-01-01

    Doped cerium (CeO 2 ) compounds are fluorite related oxides which show oxide ionic conductivity higher than yttria-stabilized zirconia in oxidizing atmosphere. As a consequence of this, a considerable interest has been shown in application of these materials for low (400-650 o C) temperature operation of solid oxide fuel cells (SOFCs). In this paper, our experimental data about the influence of microstructure at the atomic level on electrochemical properties were reviewed in order to develop high quality doped CeO 2 electrolytes in fuel cell applications. Using this data in the present paper, our original idea for a design of nanodomain structure in doped CeO 2 electrolytes was suggested. The nanosized powders and dense sintered bodies of M doped CeO 2 (M:Sm,Gd,La,Y,Yb, and Dy) compounds were fabricated. Also nanostructural features in these specimens were introduced for conclusion of relationship between electrolytic properties and domain structure in doped CeO 2 . It is essential that the electrolytic properties in doped CeO 2 solid electrolytes reflect in changes of microstructure even down to the atomic scale. Accordingly, a combined approach of nanostructure fabrication, electrical measurement and structure characterization was required to develop superior quality doped CeO 2 electrolytes in the fuel cells. (author)

  7. TEM characterization of UO2-Gd2O3 nuclear fuels synthesized by coprecipitation method

    International Nuclear Information System (INIS)

    Soldati, A.; Gana Watkins, I.; Menghini, J.; Prado, M.

    2013-01-01

    We present a micro and nano structural characterization of 4% weight doped Gd 2 O 3 -UO 2 pellet using Transmission Electron Microscopy (TEM). Agglomerate morphology and crystallite sizes were determined using light/dark field and high resolution (HR-TEM) images. Convergent beam Energy Dispersive Spectroscopy (EDS) and Electron Diffraction (ED) were used to evaluate sample composition and homogeneity, even at the nanometer scale. We obtained an average crystallite size of 90±20 nm. Moreover, from TEM-EDS analyses we determined the presence of Gadolinium in all the analyzed crystallites but with 25% variation among their concentrations. These results show the capability of TEM analysis to characterize a nuclear fuel pellet with burnable poisons nano structure and homogeneity.(author)

  8. Potential thermoelectric performance of hole-doped Cu2O

    International Nuclear Information System (INIS)

    Chen, Xin; Parker, David; Du, Mao-Hua; Singh, David J

    2013-01-01

    High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show, based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory in the relaxation time approximation, that hole-doped Cu 2 O may be such a material. We find that hole-doped Cu 2 O has a high thermopower of above 200 μV K −1 even with doping levels as high as 5.2 × 10 20 cm −3 at 500 K, mainly attributed to the heavy valence bands of Cu 2 O. This is reminiscent of the cobaltate family of high-performance oxide thermoelectrics and implies that hole-doped Cu 2 O could be an excellent thermoelectric material if suitably doped. (paper)

  9. Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

    Science.gov (United States)

    He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

    2017-08-30

    The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO 2-x , given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO 2-x material have not been studied. Here we report Pt/HfO 2-x /Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO 2-x films. As O/Hf ratios of HfO 2-x films increase, the forming voltages, SET voltages, and R off /R on windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 3 pulses (10 ns) and retention test at 85 °C (>10 4 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO 2-x -based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.

  10. Fuel densification study about uranium- 7% nanostructured gadolinium (Gd{sub 2}O{sub 3}); Estudo da densificacao do combustivel uranio - 7% gadolinio (Gd{sub 2}O{sub 3}) nanoestruturado

    Energy Technology Data Exchange (ETDEWEB)

    Serafim, Antonio da Costa

    2016-11-01

    The sintering process of UO{sub 2}-Gd{sub 2}O{sub 3} pellets has been investigated in this work for its importance in the nuclear industry and for its complex behavior during sintering. Sintering blockage occurs from 1300 deg C upwards, when densification is shifted toward higher temperatures and the final density obtained is decreased. This research includes the development of nuclear fuel for power reactors in order to increase its efficiency inside the reactor core by raising the burnup. The use of nanosized Gd{sub 2}O{sub 3} was studied in the range from 10 to 30nm, which was added to UO{sub 2}, trying to verify the occurrence of characteristic sintering blockage due to Kirkendall sintering effect observed in previous research. The samples were produced by dry mechanical mixture of UO{sub 2} powder and 7% Gd{sub 2}O{sub 3} (macro- and nanostructured). The powders were compacted and the pellets were sintered at 1700 deg C under H{sub 2} atmosphere. These results indicate that the characteristic blockage during sintering in macrostructured system UO{sub 2}-Gd{sub 2}O{sub 3} occurred in the temperature range of 1300-1500 deg C, which slows down the densification. It was observed a less intense effect when using the nanostructured Gd{sub 2}O{sub 3}; it took place at the temperature of 900 deg C, then facilitating to get an additional densification. The dilatometric tests indicated shrinkage of 22, 18 and 20% respectively in UO{sub 2} pellets, macrostructured UO{sub 2}-7% Gd{sub 2}O{sub 3} and nanostructured UO{sub 2}-7%Gd{sub 2}O{sub 3}. We detected 2% higher shrinkage, when nanostructured Gd{sub 2}O{sub 3} was used instead of macrostructured Gd{sub 2}O{sub 3}, which is used commercially. Then, the nanostructured results showed more adequate density for nuclear fuel usage. (author)

  11. High reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime

    KAUST Repository

    Alias, Mohd Sharizal

    2018-02-15

    A distributed Bragg reflector (DBR) composed of Y2O3-doped HfO2 (YDH)/SiO2 layers with high reflectivity spectrum centered at a wavelength of ~240 nm is deposited using radio-frequency magnetron sputtering. Before the DBR deposition, optical properties for a single layer of YDH, SiO2, and HfO2 thin films were studied using spectroscopic ellipsometry and spectrophotometry. To investigate the performance of YDH as a material for the high refractive index layer in the DBR, a comparison of its optical properties was made with HfO2 thin films. Due to larger optical bandgap, the YDH thin films demonstrated higher transparency, lower extinction coefficient, and lower absorption coefficient in the UV-C regime (especially for wavelengths below 250 nm) compared to the HfO2 thin films. The deposited YDH/SiO2 DBR consisting of 15 periods achieved a reflectivity higher than 99.9% at the wavelength of ~240 nm with a stopband of ~50 nm. The high reflectivity and broad stopband of YDH/SiO2 DBRs will enable further advancement of various photonic devices such as vertical-cavity surface-emitting lasers, resonant-cavity light-emitting diodes, and resonant-cavity photodetectors operating in the UV-C wavelength regime.

  12. Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation

    Science.gov (United States)

    Ye, Li; Tingting, Jiang; Qingqing, Sun; Pengfei, Wang; Shijin, Ding; Wei, Zhang

    2012-03-01

    HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C2H5)(CH3)]4 and H2O2. A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing. The composition, the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment. With a nitrogen concentration increase from 1.41 to 7.45%, the bandgap of the films decreased from 5.82 to 4.94 eV.

  13. Study on the thermoluminescent properties of K{sub 2}YF{sub 5} and K{sub 2}GdF{sub 5} crystals doped with optically active trivalent ions for gamma and neutrons dosimetry; Estudo das propriedades termoluminescentes de cristais de K{sub 2}YF{sub 5} e K{sub 2}GdF{sub 5} dopados com ions trivalentes opticamente ativos para dosimetria gama e de neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Edna Carla da

    2008-07-01

    In this work, the thermoluminescent (TL) properties of both double potassium yttrium fluoride (K{sub 2}YF{sub 5}) and double potassium gadolinium fluoride (K{sub 2}GdF{sub 5}) crystals doped with optically active rare earth ions were investigated from the point of view of gamma and neutron dosimetry. Crystalline platelets with thickness of about 1 mm, synthesized under hydrothermal conditions, were irradiated in order to study TL sensitivity, as well as dose and energy response, reproducibility and fading, in terms of Ce{sup 3+}, Tb{sup 3+}, Dy{sup 3+}, e Pr{sup 3+} concentrations. The K{sub 2}YF{sub 5} crystals doped with 1.0 at por cent Dy{sup 3+} have been found to have an excellent linear TL response to X and gamma photons, in the range of 0.01 to 10 mGy. The TL output is comparable to that of CaS0{sub 4}:Mn dosemeters. The main peak at 130 deg C has been found to have a TL response for 41.1 keV X-ray energy 32 times higher than that for 662 keV gamma rays. This fact points out that the K{sub 2}Y{sub 0.99}Dy{sub 0.01}F{sub 5} crystals have great potential for X-rays diagnostic and/or industrial radiography. On the other hand, the K{sub 2}GdF{sub 5} crystals doped with 5.0 at por cent Dy{sup 3+} have been found to have the better TL response for gamma and fast neutron radiation, among the dopants studied. For gamma fields the TL response was linear for doses ranging from 0.1 to 200 mGy. The TL peak around 200 deg C can be deconvoluted into four individual peaks, all of them with linear behavior. For fast neutron radiation produced by an {sup 241}Am{sub B}e source, the TL responses for doses ranging from 0.6 to 12 mSv were also linear and comparable to that of commercial TLD-600, irradiated at same conditions. The TL emission due to neutrons was in the high temperature range, above 200 deg C. These results points out that K{sub 2}Gd{sub 0.95}Dy{sub 0.05}F{sub 5} crystals are good candidates for use in neutron dosimetry applications. (author)

  14. Enhancement of encaged electron concentration by Sr(2+) doping and improvement of Gd(3+) emission through controlling encaged anions in conductive C12A7 phosphors.

    Science.gov (United States)

    Zhang, Meng; Liu, Yuxue; Zhu, Hancheng; Yan, Duanting; Yang, Jian; Zhang, Xinyang; Liu, Chunguang; Xu, Changshan

    2016-07-28

    Conductive C12A7:0.1%Gd(3+),y%Sr(2+) powders with different Sr(2+) doping concentrations have been prepared in a H2 atmosphere by a solid state method in combination with subsequent UV-irradiation. The encaged electron concentration could be modulated through tuning Sr(2+) doping and its maximum value reaches 2.3 × 10(19) cm(-3). This is attributed to the competition between enhanced uptake and the release of the encaged anions during their formation and diffusion processes and the suppression of encaged electrons generation due to the increased encaged OH(-) anions and the decreased encaged O(2-) anions. Although there exists encaged electrons and different encaged anions (O(2-), H(-) and OH(-)) in C12A7 conductive powders prepared through the hydrogen route, a dominant local environment around Gd(3+) could be observed using electron spin resonance (ESR) detection. It can be ascribed to the stronger coupling of the encaged OH(-) to the framework of C12A7 than those of the encaged electrons, O(2-) and H(-) anions. In addition, emission of Gd(3+) ions is enhanced under UV or low voltage electron beam excitation and a new local environment around Gd(3+) ions appears through the thermal annealing in air because of the decrease of the encaged OH(-) anions and the increase of the encaged O(2-) anions. Our results suggested that Sr(2+) doping in combination with thermal annealing in air is an effective strategy for increasing the conductive performance and enhancing the emission of rare earth ions doped into C12A7 conductive phosphors for low-voltage field emission displays (FEDs).

  15. Thermoluminescence in HfO_2:Eu"3"+ powders irradiated in UV

    International Nuclear Information System (INIS)

    Ceron R, P. V.; Montes R, E.; Rivera M, T.; Diaz G, J. A. I.; Guzman M, J.

    2016-10-01

    Various inorganic compounds synthesized for photo luminescent applications have also presented a thermoluminescent (Tl) response, for example the metal oxides doped with rare earths. This property extends the use of these materials to the radiation dosimetry. For this reason, in this work the Tl response is presented in HfO_2:Eu"3"+ powders synthesized by the hydrothermal path, exposed to ultraviolet (UV) radiation of 254 nm. The kinetic parameters of its brightness curve were also calculated using the Chen expressions and the analysis method based on the shape of the curve. For the powders irradiated for 10 min the highest Tl response corresponds to the sample with 5% of the impurity, which is 6.5 times higher than the signal corresponding to the intrinsic sample. Its bright curve shows a main peak with a maximum in 148 degrees Celsius and a second order kinetics. Another test with the same material shows the Tl response against the exposure time, with a maximum in the 3 minutes. These calculations and tests constitute a first approach for the study of these powders as Tl dosimeter for UV radiation. (Author)

  16. Performance of Ce-doped (La, Gd).sub.2./sub.Si.sub.2./sub.O.sub.7./sub. scintillator with an avalanche photodiode

    Czech Academy of Sciences Publication Activity Database

    Kurosawa, S.; Shishido, T.; Suzuki, A.; Pejchal, Jan; Yokota, Y.; Yoshikawa, A.

    2014-01-01

    Roč. 744, Apr (2014), 30-34 ISSN 0168-9002 Institutional support: RVO:68378271 Keywords : scintillator * Ce-doped (La, Gd) 2 Si 2 O 7 * temperature dependence * APD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.216, year: 2014

  17. Investigations on the determination of traces of some rare earths (Eu, Sm, Gd, Y) in oxides of rare earths (Y2O3, Sm2O3, Gd2O3) by emission spectrography in d.c. arc

    International Nuclear Information System (INIS)

    Dittrich, K.; Gajek, M.; Luan, P.

    1978-01-01

    The evaporation of traces and matrices of rare earth elements was investigated in different atmospheres. It was found, that low-boiling rare earths elements, because of their extended formation of carbides evaporate more slowly than high-boiling rare earths elements. The evaporation of the traces depends on the matrices. 3 cases for the determination of traces of rare earths elements in oxides of other rare earths elements are derived from the results of the evaporation: Low- to high-boiling traces of rare earths elements in low-boiling matrices of rare earths elements, low-boiling traces in medium- to high-boiling matrices, and medium- to high-boiling traces in medium- to high-boiling matrices. The results of the determination are: in Y 2 O 3 : 14 ppm Sm, 2 ppm Eu; in Gd 2 O 3 : 18 ppm Y, 3 ppm Sm, 2 ppm Eu; in Sm 2 O 3 : 70 ppm Y, 370 ppm Gd, 16 ppm Eu. (author)

  18. Influence of Gd2O3 on thermal and spectroscopic properties of aluminosilicate glasses

    Science.gov (United States)

    Kasprzyk, Marta; Środa, Marcin

    2018-06-01

    A series of aluminosilicate glasses 25SiO2·(20-x)Al2O3·40Na2O·15BaO-xGd2O3 with 0 ≤ x ≤ 10 were prepared in order to analyze the influence of gadolinium on thermal and spectroscopic properties of these materials. Increasing of thermal parameters (Tg, Tx, Δcp, ΔT) values with higher Gd2O3 content was determined using DSC method. Crystalline phases, formed during heat treatment, were identified with XRD - NaAlSiO4 and BaSiO3 in glass with 0% mol. Gd2O3 and Gd9.33(SiO4)6O2, NaAlSiO4 and BaAl2Si2O6 in glass with 10% mol. Gd2O3. Spectroscopic analysis - FTIR and Raman - revealed Gd2O3 influence on glass structure in the same way like Al2O3, but some differences appear due to the differ bond strength and ionic radius between Gd and Al. Raman spectra confirmed higher network polymerization (enriched with Q2 units). Optical band gap energy (Eopt) and Urbach energy (ΔE) were calculated from the Tauc plot. Mechanical tests demonstrated lower microhardness with increasing content of Gd2O3 content, as a result of higher concentration of atoms with larger radius.

  19. The effects of Zn doping on magnetic properties of Cu3Bi(SeO3)2O2Cl

    Science.gov (United States)

    Yang, Pei-Ying; Tseng, Wu-Jyun; Wu, Hung-Cheng; Kakarla, D. Chandrasekhar; Yang, Hung-Duen; Department of Physics, Natl Sun Yat Sen Univ Team

    Recently, layered spin-frustrated Cu3Bi(SeO3)2 O2Cl has received considerable research attention due to its unusual magnetic properties. Two inequivalent Cu2 + ions form a pseudo-kagome lattice that invokes spin frustration and anisotropic magnetic properties. In this study, the influence of Zn doping on the complex magnetic properties has been explored. Polycrystalline (Cu1-xZnx) Bi(SeO3)2 O2Cl (0 x 0.5) samples were synthesized using solid-state reaction and characterized by X-ray diffraction and magnetic measurements. The Zn doping strongly modulates the magnetic ground state of the system. The antiferromagnetic transition temperature TN = 24 K and magnetic field-induced hysteresis observed for x = 0 at low field are systematically shifted to lower temperature and reduced with Zn doping. These results can illustrate the insight of the occurrence of field-induced spin-flip type multiferroics in Cu3Bi(SeO3)2 O2Cl.

  20. Phase transitions in K-doped MoO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Alves, L. M. S., E-mail: leandro-fisico@hotmail.com; Lima, B. S. de; Santos, C. A. M. dos [Departamento de Engenharia de Materiais, Escola de Engenharia de Lorena-USP, Lorena, São Paulo 12602-810 (Brazil); Rebello, A.; Masunaga, S. H.; Neumeier, J. J. [Department of Physics, Montana State University, P.O. Box 173840, Bozeman, Montana 59717-3840 (United States); Leão, J. B. [NIST Center for Neutron Research, National Institute of Standards and Technology, 100 Bureau Dr. MS 6102, Gaithersburg, Maryland 20899-6102 (United States)

    2014-05-28

    K{sub 0.05}MoO{sub 2} has been studied by x-ray and neutron diffractometry, electrical resistivity, magnetization, heat capacity, and thermal expansion measurements. The compound displays two phase transitions, a first-order phase transition near room temperature and a second-order transition near 54 K. Below the transition at 54 K, a weak magnetic anomaly is observed and the electrical resistivity is well described by a power-law temperature dependence with exponent near 0.5. The phase transitions in the K-doped MoO{sub 2} compound have been discussed for the first time using neutron diffraction, high resolution thermal expansion, and heat capacity measurements as a function of temperature.

  1. The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Baturay, Silan [Department of Physics, Faculty of Science, Dicle University, 21280 Diyarbakir (Turkey); Ocak, Yusuf Selim, E-mail: yusufselim@gmail.com [Department of Science, Faculty of Education, Dicle University, 21280 Diyarbakir (Turkey); Science and Technology Application and Research Center, Dicle University, 21280 Diyarbakir (Turkey); Kaya, Derya [Department of Physics, Institute of Natural Applied Sciences, Dicle University, 21280 Diyarbakir (Turkey)

    2015-10-05

    Highlights: • Undoped and Gd doped ZnO thin films were deposited onto p-Si semiconductor. • The Gd:ZnO/p-Si heterojunctions were compared with undoped ZnO/p-Si heterojunction. • A strong effect of Gd doping on the performance of the devices were reported. - Abstract: Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I–V measurements of the 1% Gd-doped ZnO/p-Si heterojunction exhibited the strongest response to light.

  2. Novel chromium doped perovskites A{sub 2}ZnTiO{sub 6} (A = Pr, Gd): Synthesis, crystal structure and photocatalytic activity under simulated solar light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Hekai [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Fang, Minghao, E-mail: fmh@cugb.edu.cn [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Huang, Zhaohui, E-mail: huang118@cugb.edu.cn [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Yan’gai [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Chen, Kai [National Engineering Research Center for Rare Earth Materials, General Research Institute For Nonferrous Metals, Grirem Advanced Materials Co.,Ltd., Beijing 100088 (China); Guan, Ming; Tang, Chao; Zhang, Lina; Wang, Meng [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China)

    2017-01-30

    Highlights: • Novel Cr doped A{sub 2}ZnTiO{sub 6} (A = Pr, Gd) photocatalysts were successfully synthesized. • The light absorbance and photocatalytic activity are enhanced through Cr doping. • The photocatalytic reaction mechanism of these photocatalyst was investigated. - Abstract: Double perovskite related oxides A{sub 2}ZnTiO{sub 6} (A = Pr, Gd) have been successfully synthesized by solid state reaction and investigated as photocatalysts for the first time. The two layered titanates mainly demonstrate absorbances under UV irradiation, except for several sharp absorption bands above 400 nm for Pr{sub 2}ZnTiO{sub 6}. Therefore, a series of photocatalysts by doping A{sub 2}ZnTiO{sub 6} (A = Pr, Gd) with Cr have been developed in the hope to improve their absorption in the visible light region. The successful incorporation of Cr was detected by XRD and XPS, and the prepared samples have also been characteriazed by SEM, UV–vis DRS and PL. The characterization results suggested that Cr was present mainly in the form of Cr3+, with only a small amount of Cr6+ species. It served as an efficient dopant for the extension of visible light absorbance and improved photocatalytic activities under solar light irradiation. For both Pr{sub 2}ZnTiO{sub 6} and Gd{sub 2}ZnTiO{sub 6}, the valence band (VB) was composed of hybridized states of the Zn 3d, O 2p and the conduction band (CB) has major contribution from Zn 4s, Ti 3d orbitals. For Cr doped samples, the newly formed spin-polarized valence band in the middle of the band gap that primarily arises from Cr 3d orbitals was responsible for the improved optical and photocatalytic properties.

  3. X-ray diffraction studies on K3Gd5 (PO4) 6 between 20K to 1073 K

    International Nuclear Information System (INIS)

    Bevara, Samatha; Achary, S.N.; Tyagi, A.K.; Sinha, A.K.; Sastry, P.U.

    2016-01-01

    Complex inorganic phosphates have been of interest due to their diversified crystal chemistry depending on composition, preparation condition as well as external parameters like temperature and pressure. In addition varieties of complex phosphates have been considered as potential host matrices for immobilization of radioactive elements as well as for selective separation of ions from high level nuclear waste or heavy metal ion pollutants from environment. Temperature and/or pressure induced structural variations are often noticed in such type complex phosphates. In K 2 O-Gd 2 O 3 -P 2 O 5 , a novel complex phosphate with K 3 Gd 5 (PO 4 ) 6 has been reported recently. In order to study the effect of temperature on crystal structure of K 3 Gd 5 (PO 4 ) 6 variable temperature XRD studies between 20 K to 1073 K were carried out and the results are presented herein

  4. Phosphors doped with Dy3+ and Gd3+ for lighting

    International Nuclear Information System (INIS)

    Su, Q; Pei, Z.; Zeng, Q.; Chi, L.

    1998-01-01

    Full text: Some heavy lanthanide ions with even atomic number such as Dy 3+ and Gd 3+ are abundant in the ion adsorption type deposit of China. Their price is cheap and they have specific spectroscopic properties which can be used as phosphors. Dy 3i on has two dominant bands in the emission spectrum. The yellow band (575 nm) corresponds to the hypersensitive transition 4 F 9/2 → 6 H 13/2 (ΔL=2, ΔJ=2), and the blue band (485 nm) corresponds to the 4 F 9/2 → 6 H 15/2 transition. Factors which influence on the yellow- to-blue intensity ratio (Y/B) were investigated. Adjusting to a suitable Y/B, Dy 3+ will emit white light with high colour temperature and can be used for lighting. But Dy 3+ ion has only narrow excitation bands of f-f transitions ranging from 300-500 nm, no broad excitation band such as charge transfer band or f-d transition band exists in the UV region 200-300 nm. Hence its luminescent efficiency is low when it is excited by UV radiation emitted from the mercury plasma. This is one of the drawbacks to its use as lamp phosphor. However, this can be overcome by sensitisation with Gd 3+ , Pb 2+ or other sensitisers such as vanadate shown in this report. Gd 3+ is not only a good matrix, but also a good sensitiser. Using its 8 S 7/2 → 6 D, 6 I and 6 P transitions, the UV excitation energy can be absorbed and transferred to the activator such as Dy 3+ . Therefore, in some cases Gd 3+ is better than Y 3+ which is optical inert as a matrix. For the phosphor Ca 1.96 Pb 0.04 RE 7.9 Dy 0.1 (SiO 4 ) 6 O 2 prepared by sol-gel method, the intensity of Dy 3+ in the Gd 3+ compound (RE=Gd 3+ ) is six times that in the Y 3+ compound. Some new phosphors doped with Dy 3+ and Gd 3+ prepared in our laboratory are reported

  5. Grain growth kinetics for B2O3-doped ZnO ceramics

    Directory of Open Access Journals (Sweden)

    Yuksel Berat

    2015-06-01

    Full Text Available Grain growth kinetics in 0.1 to 2 mol % B2O3-added ZnO ceramics was studied by using a simplified phenomenological grain growth kinetics equation Gn = K0 · t · exp(-Q/RT together with the physical properties of sintered samples. The samples, prepared by conventional ceramics processing techniques, were sintered at temperatures between 1050 to 1250 °C for 1, 2, 3, 5 and 10 hours in air. The kinetic grain growth exponent value (n and the activation energy for the grain growth of the 0.1 mol % B2O3-doped ZnO ceramics were found to be 2.8 and 332 kJ/mol, respectively. By increasing B2O3 content to 1 mol %, the grain growth exponent value (n and the activation energy decreased to 2 and 238 kJ/mol, respectively. The XRD study revealed the presence of a second phase, Zn3B2O6 formed when the B2O3 content was > 1 mol %. The formation of Zn3B2O6 phase gave rise to an increase of the grain growth kinetic exponent and the grain growth activation energy. The kinetic grain growth exponent value (n and the activation energy for the grain growth of the 2 mol % B2O3-doped ZnO ceramics were found to be 3 and 307 kJ/mol, respectively. This can be attributed to the second particle drag (pinning mechanism in the liquid phase sintering.

  6. Properties of phases in HfO2-TiO2 system

    International Nuclear Information System (INIS)

    Red'ko, V.P.; Terekhovskij, P.B.; Majster, I.M.; Shevchenko, A.V.; Lopato, L.M.; Dvernyakova, A.A.

    1990-01-01

    A study was made on axial and linear coefficients of thermal expansion (CTE) of HfO 2 -TiO 2 system samples in concentration range of 25-50 mol% TiO 2 . Samples, containing 35 and 37 mol% TiO 2 , are characterized by the lowest values of linear CTE. Dispersion of the basic substances doesn't affect CTE value. Correlation with axial and linear CTE of samples in ZrO 2 -TiO 2 system was conducted. Presence of anisotropy of change of lattice parameters was supported for samples, containing 37.5 and 40 mol% TiO 2 . Polymorphous transformations for hafnium titanate were not revealed

  7. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  8. Synthesis and Characterization of Hollow Magnetic Alloy (GdNi2, Co5Gd Nanospheres Coated with Gd2O3

    Directory of Open Access Journals (Sweden)

    Wang Li

    2014-01-01

    Full Text Available Uniform magnetic hollow nanospheres (GdNi2, Co5Gd coated with Gd2O3 have been successfully prepared on a large scale via a urea-based homogeneous precipitation method using silica (SiO2 spheres as sacrificed templates, followed by subsequent heat treatment. Nitrogen sorption measurements and scanning electron microscope reveal that these hollow-structured magnetic nanospheres have the mesoporous shells that are composed of a large amount of uniform nanoparticles. After reduction treatment, these nanoparticles exhibit superparamagnetism that might have potential applications in medicine. Furthermore, the developed synthesis route may provide an important guidance for the preparation of other multifunctional hollow spherical materials.

  9. Catalytic properties of pure and K+-doped Cu O/Mg O system towards 2-propanol conversion

    International Nuclear Information System (INIS)

    El-Molla, S. A.; Amin, N. H.; Hammed, M. N.; Sultan, S. N.; El-Shobaky, G. A.

    2013-01-01

    Cu O/Mg O system having different compositions was prepared by impregnation method followed by calcination at 400-900 C. The effect of Cu O content, calcination temperature and doping with small amounts of K + species (1-3 mol %) on physicochemical, surface and catalytic properties of the system were investigated using X-ray diffraction, adsorption of N 2 at - 196 C, and conversion of isopropyl alcohol at 150-400 C using a flow technique. The results revealed that the solids having the formulae 0.2 and 0.3 Cu O/Mg O calcined at 400 C consisted of nano sized Mg O and Cu O as major phases together with Cu 2 O as minor phase. The Bet-surface areas of different absorbents are decreased by increasing Cu O content, calcination temperature and K + -doping. Mg O-support material showed very small catalytic activity in 2-propanol conversion. The investigated system behaved as selective catalyst for dehydrogenation of 2-propanol with selectivity >80%. The catalytic activity increased by increasing Cu O content and decreased by increasing the calcination temperature within 400-900 C. K + -doping increased the catalytic activity and catalytic durability. (Author)

  10. Synthesis and Characterization of Gd2O3 Hollow Microspheres Using a Template-Directed Method

    Directory of Open Access Journals (Sweden)

    Xueliang Jiang

    2016-04-01

    Full Text Available Uniform rare-earth gadolinium oxide (Gd2O3 hollow microspheres, as formed through a urea-assisted homogenous precipitation process using carbon spheres as a template and a subsequent heat treatment, were characterized by using X-ray diffraction, Fourier transformed infared spectroscopy, thermogravimetry, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy and Brunauer-Emmett-Tellet surface area measurement. The results indicate that the final products can be indexed to a cubic Gd2O3 phase with high purity and have a uniform morphology at 500 nm in diameter and 20 nm in shell thickness. The as-synthesized Gd2O3 hollow microspheres exhibited a superior photooxidation activity to that of Gd2O3 powder and an effect similar to P25, significantly broadening the potential of Gd2O3 hollow microspheres for many practical applications.

  11. Study of effect of co-doping on CIE coordinates of strontium cerium oxide phosphor (Sr_2CeO_4)

    International Nuclear Information System (INIS)

    Zambare, Pradip Z.; Ahirrao, P.B.; Chaudhari, D.B.; Zambare, A.P.; Mahajan, O.H.

    2016-01-01

    The phosphors Sr_2CeO_4 doped europium and gadolinium were synthesized by modified solid state diffusion method. From emission spectra, the CIE coordinates (x, y) of x% Eu"3"+ and 0.5 %Gd"3"+ doped Sr_2CeO_4 phosphors was calculated. In present paper, we investigate luminescence properties and colorimetric study of Sr_2CeO_4 doped 0.5% Gd"3"+, x% Eu"3"+. The phosphors Sr_2CeO_4 doped europium and gadolinium were successfully synthesized by modified solid state diffusion method. X-ray diffraction (XRD) profile confirms the orthorhombic nature of Eu"3"+ and 0.5% Gd"3"+ doped Sr_2CeO_4 phosphors. In addition, scanning electron Microscopy (SEM), Fourier-Transformation IR spectroscopy (FTIR), was also used to study the synthesized phosphors

  12. Evidence for oxygen vacancy manipulation in La1/3Sr2/3FeO3− thin films via voltage controlled solid-state ionic gating

    Directory of Open Access Journals (Sweden)

    A. L. Krick

    2017-04-01

    Full Text Available Reversible changes of the structural and electronic transport properties of La1/3Sr2/3FeO3-δ/Gd-doped CeO2 heterostructures arising from the manipulation of δ are presented. Thermally induced oxygen loss leads to a c-axis lattice expansion and an increase in resistivity in a La1/3Sr2/3FeO3-δ film capped with Gd-doped CeO2. In a three-terminal device where a gate bias is applied across the Gd-doped CeO2 layer to alter the La1/3Sr2/3FeO3-δ oxygen stoichiometry, the ferrite channel is shown to undergo a change in resistance of an order of magnitude using gate voltages of less than 1 V applied at 500 K. The changes in resistance remain upon cooling to room temperature, in the absence of a gate bias, suggesting solid state ionic gating of perovskite oxides as a promising platform for applications in non-volatile, multistate devices.

  13. Crystallization of 21.25Gd{sub 2}O{sub 3}-63.75MoO{sub 3}-15B{sub 2}O{sub 3} glass induced by femtosecond laser at the repetition rate of 250 kHz

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, M.J.; Han, Y.M. [Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444 (China); Liu, L.P. [Hunan Biological and Electromechanical Polytechnic, Changsha 410126 (China); Zhou, P.; Du, Y.Y.; Guo, Q.T. [Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444 (China); Ma, H.L., E-mail: mahl@staff.shu.edu.cn [Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444 (China); Dai, Y. [Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444 (China)

    2010-12-01

    We report the formation of {beta}'-Gd{sub 2}(MoO{sub 4}){sub 3} (GMO) crystal on the surface of the 21.25Gd{sub 2}O{sub 3}-63.75MoO{sub 3}-15B{sub 2}O{sub 3} glass, induced by 250 kHz, 800 nm femtosecond laser irradiation. The morphology of the modified region in the glass was clearly examined by scanning electron microscopy (SEM). By micro-Raman spectra, the laser-induced crystals were confirmed to be GMO phases and it is found that these crystals have a strong dependence on the number and power of the femtosecond laser pulses. When the irradiation laser power was 900 mW, not only the Raman peaks of GMO crystals but also some new peaks at 214 cm{sup -1}, 240 cm{sup -1}, 466 cm{sup -1}, 664 cm{sup -1} and 994 cm{sup -1}which belong to the MoO{sub 3} crystals were observed. The possible mechanisms are proposed to explain these phenomena.

  14. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal

    2015-06-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Hydrothermal synthesis of Gd2O3:Eu3+ nanophosphors: Effect of surfactant on structural and luminescence properties

    International Nuclear Information System (INIS)

    Dhananjaya, N.; Nagabhushana, H.; Sharma, S.C.; Rudraswamy, B.; Shivakumara, C.; Nagabhushana, B.M.

    2014-01-01

    Highlights: • Gd(OH) 3 :Eu 3+ , GdOOH:Eu 3+ and Gd 2 O 3 :Eu 3+ phases were prepared by hydrothermal method. • Phosphors were well characterized by XRD, SEM, TEM, Raman, UV–Vis, FT-IR. • Cubic Gd 2 O 3 :Eu 3+ show intense red emission, which was highly useful for photonics application. • HDA surfactant plays an important role in conversion of cubic to hexagonal phases. -- Abstract: Various morphologies of Eu 3+ activated gadolinium oxide have been prepared by hydrothermal method using hexadecylamine (HDA) as surfactant at different experimental conditions. The powder X-ray diffraction studies reveal as-formed product is hexagonal Gd(OH) 3 :Eu 3+ phase and subsequent heat treatment at 350 and 600 °C transforms to monoclinic GdOOH:Eu 3+ and cubic Gd 2 O 3 :Eu 3+ phases respectively. SEM pictures of without surfactant show irregular shaped rods along with flakes. However, in the presence of HDA surfactant, the particles are converted into rods of various sizes. The temperature dependent morphological evolution of Gd 2 O 3 :Eu 3+ without and with HDA surfactant is studied. TEM micrographs of Gd(OH) 3 :Eu 3+ sample with HDA confirms smooth nanorods with various diameters in the range 20–100 nm. FTIR studies reveal that HDA surfactant plays an important role in conversion of cubic to hexagonal phases. Among these three phases, cubic phase Gd 2 O 3 :Eu 3+ (λ ex = 254 nm) show red emission at 612 nm corresponding to 5 D 0 → 7 F 2 and is more efficient host than the monoclinic counterpart. The band gap for hexagonal Gd(OH) 3 :Eu 3+ is more when compared to monoclinic GdOOH:Eu 3+ and cubic Gd 2 O 3 :Eu 3+

  17. Effect of additives in sintering UO2-7wt%Gd2O3 fuel pellets

    International Nuclear Information System (INIS)

    Santos, L.R.; Riella, H.G.

    2009-01-01

    Gadolinium has been used as burnable poison for reactivity control in modern PWRs. The incorporation of Gd 2 O 3 powder directly into the UO 2 powder enables longer fuel cycles and optimized fuel utilization. Nevertheless, processing by this method leads to difficulties while obtaining sintered pellets with the minimum required density. The process for manufacturing UO 2 - Gd 2 O 3 generates scraps that should be reused. The main scraps are green and sintered pellets, which must be calcined to U 3 O 8 to return to the fabrication process. Also, the incorporation of Gd 2 O 3 in UO 2 requires the use of an additive to improve the sintering process, in order to achieve the physical properties specified for the mixed fuel, mainly density and microstructure. This paper describes the effect of the addition of fabrication scraps on the properties of the UO 2 -Gd 2 O 3 fuel. Aluminum hydroxide Al(OH) 3 was also incorporated to the fuel as a sintering aid. The results shown that the use of 2000 ppm of Al(OH) 3 as additive allow to fabricate good pellets with up to 10 wt% of recycled scraps. (author)

  18. Multiple rare-earth ion environments in amorphous (Gd2O3)0.230(P2O5)0.770 revealed by gadolinium K-edge anomalous X-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Cole, Jacqueline M.; Cramer, Alisha J.; Shastri, Sarvjit D.; Mukaddem, Karim T.; Newport, Robert J

    2018-04-26

    A Gd K-edge anomalous X-ray scattering (AXS) study is performed on the rare-earth (R) phosphate glass, (Gd2O3)0.230(P2O5)0.770, in order to determine Gd…Gd separations in its local structure. The minimum rare-earth separation is of particular interest given that the optical properties of these glasses can quench when rare-earth ions become too close to each other. To this end, a weak Gd…Gd pairwise correlation is located at 4.2(1) Å which is representative of a meta-phosphate R…R separation. More intense first neighbor Gd…Gd pairwise correlations are found at the larger radial distributions, 4.8(1) Å, 5.1(1) Å and 5.4(1) Å. These reflect a mixed ultra-phosphate and meta-phosphate structural character, respectively. A second neighbor Gd…Gd pairwise correlation lies at 6.6(1) Å which is indicative of meta-phosphate structures. Meta- and ultra-phosphate classifications are made by comparing the R…R separations against those of rare-earth phosphate crystal structures, R(PO3)3 and RP5O14 respectively, or difference pair distribution function (PDF) features determined on similar glasses using difference neutron scattering methods. The local structure of this glass is therefore found to display multiple rare-earth ion environments, presumably because its composition lies between these two stoichiometric formulae. These Gd…Gd separations are well resolved in the PDFs that represent the AXS signal. Indeed, the spatial resolution is so good that it also enables the identification of R…X (X = R, P, O) pairwise correlations up to r ~ 9 Å; their average separations lie at r ~ 7.1(1) Å, 7.6(1) Å 7.9(1) Å, 8.4(1) Å and 8.7(1) Å. This is the first report of a Gd K-edge AXS study on an amorphous material. Its demonstrated ability to characterize the local structure of a glass up to such a long-range of r, heralds exciting prospects for AXS studies on other ternary non-crystalline materials. However, the technical challenge of such an experiment

  19. The Pr and Ca Substitution in GdBa2Cu3O7- & delta

    Directory of Open Access Journals (Sweden)

    H. S. H.

    2001-12-01

    Full Text Available   The granular Gd1-x-zPrxCazBa2Cu3O7-δ high-temperature cuprate samples with 0.0 ≤ x ≤ 0.3 and 0.0≤ x ≤ 0.35 are prepared by standard solid state reaction and characterized by XRD and SEM techniques. The BaCuO2 and impurity phases are less than 1% in the samples having high levels of pr and Ca concentrations. The electrical resistivity measurements show a nonlinear reduction in Tc(x,z=etc versus x. Moreover, the Tc(z curve with x=0 is nonlinear and aplateau appears at z≈ 0.05-0.015. For Pr-Ca-doped samples with a constant concentration of Pr, Tc increases with the increase of Ca up to an optimum value of Ca doping and then in decreases. Based on these observations, we suggest that hole filling and hole localization the main effects of Pr ion substiution. The magnetic measurements indicate that the value of Hc1 is in the order of 10 mT. The mangetoresistance measurements have been measured and analyzed. The superconducting transition region is broadened by the application of magnetic field. The experimental data near the onsen of superconductivity are fitted with the Ambegakor and Halperin (AH phase-slip model. We observe that the AH parameter,γ (H, depends not only on the temperature and the magnetic field, but also on the Pr and Ca ions concentrations. It is observed that the critical current density increases with Ca substitution and decreases with Pr substitution in Gd-123 system. We suggest that the Pr ion substitution probably enhances the weak link, but the Ca ion acts as flux pinning center in the GdPrCa-123 system.

  20. Influence of phosphorous precursors on spectroscopic properties of Er3+-activated SiO2-HfO2-P2O5 planar waveguides

    International Nuclear Information System (INIS)

    Vasilchenko, I; Carpentiero, A; Chiappini, A; Chiasera, A; Ferrari, M; Vaccari, A; Lukowiak, A; Righini, G C; Vereshagin, V

    2014-01-01

    (70-x)SiO 2 -30HfO 2 -xP 2 O 5 (x= 5, 10 mol %) glass planar waveguides activated by 0.5 mol% Er 3 + ions were prepared by sol-gel route. Several phosphorous precursors have been investigated for the synthesis of a dielectric stable sol useful for the realization of planar waveguides. The waveguides were investigated by different diagnostic techniques. The optical properties such as refractive index, thickness, number of propagating modes and attenuation coefficient were measured at 632.8 and 543.5 nm by prism coupling technique. Transmission measurements were carried out in order to assess the transparency of the deposited films. Photoluminescence measurements and lifetime decay curves of the Er 3 + transition (4 I 13/2 → 4 I 15/2 ) were performed in order to investigate the role of P 2 O 5

  1. Structural phase transitions at high-temperature in double perovskite Sr{sub 2}GdRuO{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Triana, C.A.; Corredor, L.T.; Landinez Tellez, D.A. [Grupo de Fisica de Nuevos Materiales, Departamento de Fisica, Universidad Nacional de Colombia, A.A. 14490, Bogota D.C (Colombia); Roa-Rojas, J., E-mail: jroar@unal.edu.co [Grupo de Fisica de Nuevos Materiales, Departamento de Fisica, Universidad Nacional de Colombia, A.A. 14490, Bogota D.C (Colombia)

    2012-08-15

    The crystal structure evolution of the Sr{sub 2}GdRuO{sub 6} complex perovskite at high-temperature has been investigated over a wide temperature range between 298 K{<=}T{<=}1273 K. Powder X-ray diffraction measurements at room temperature and Rietveld analysis show that this compounds crystallizes in a monoclinic perovskite-type structure with P2{sub 1}/n (no. 14) space group and the 1:1 ordered arrangement of Ru{sup 5+} and Gd{sup 3+} cations over the six-coordinate M sites, with lattice parameters a=5.81032(8) A, b=5.82341(4) A, c=8.21939(7) A, V=278.11(6) A{sup 3} and angle {beta}=90.311(2){sup o}. The high-temperature analysis shows that this material suffers two-phase transitions. At 373 K it adopts a monoclinic perovskite structure with I2/m space group, and lattice parameters a=5.81383(2) A, b=5.82526(4) A, c=8.22486(1) A, V=278.56(2) A{sup 3} and angle {beta}=90.28(2){sup o}. Above of 773 K, it suffers a phase transition from monoclinic I2/m to tetragonal I4/m, with lattice parameters a=5.84779(1) A, c=8.27261(1) A, V=282.89(5) A{sup 3} and angle {beta}=90.02(9){sup o}. The high-temperature phase transition from monoclinic I2/m to tetragonal I4/m is characterized by strongly anisotropic displacements of the anions.

  2. Surface damages of polycrystalline W and La2O3-doped W induced by high-flux He plasma irradiation

    Science.gov (United States)

    Liu, Lu; Li, Shouzhe; Liu, Dongping; Benstetter, Günther; Zhang, Yang; Hong, Yi; Fan, Hongyu; Ni, Weiyuan; Yang, Qi; Wu, Yunfeng; Bi, Zhenhua

    2018-04-01

    In this study, polycrystalline tungsten (W) and three oxide dispersed strengthened W with 0.1 vol %, 1.0 vol % and 5.0 vol % lanthanum trioxide (La2O3) were irradiated with low-energy (200 eV) and high-flux (5.8 × 1021 or 1.4 × 1022 ions/m2ṡs) He+ ions at elevated temperature. After He+ irradiation at a fluence of 3.0 × 1025/m2, their surface damages were observed by scanning electron microscopy, energy dispersive spectroscopy, scanning electron microscopy-electron backscatter diffraction, and conductive atomic force microscopy. Micron-sized holes were formed on the surface of W alloys after He+ irradiation at 1100 K. Analysis shows that the La2O3 grains doped in W were sputtered preferentially by the high-flux He+ ions when compared with the W grains. For irradiation at 1550 K, W nano-fuzz was formed at the surfaces of both polycrystalline W and La2O3-doped W. The thickness of the fuzz layers formed at the surface of La2O3-doped W is 40% lower than the one of polycrystalline W. The presence of La2O3 could suppress the diffusion and coalescence of He atoms inside W, which plays an important role in the growth of nanostructures fuzz.

  3. Environmental Stability and Oxidation Behavior of HfO2-Si and YbGd(O) Based Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Farmer, Serene; McCue, Terry R.; Harder, Bryan; Hurst, Janet B.

    2017-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, environmental durable environmental barrier coating systems. In this paper, the durability and performance of advanced Electron Beam-Physical Vapor Deposition (EB-PVD) NASA HfO2-Si and YbGdSi(O) EBC bond coat top coat systems for SiCSiC CMC have been summarized. The high temperature thermomechanical creep, fatigue and oxidation resistance have been investigated in the laboratory simulated high-heat-flux environmental test conditions. The advanced NASA EBC systems showed promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  4. Optical and dielectric properties of isothermally crystallized nano-KNbO3 in Er3+-doped K2O-Nb2O5-SiO2 glasses.

    Science.gov (United States)

    Chaliha, Reenamoni Saikia; Annapurna, K; Tarafder, Anal; Tiwari, V S; Gupta, P K; Karmakar, Basudeb

    2010-01-01

    Precursor glass of composition 25K(2)O-25Nb(2)O(5)-50SiO(2) (mol%) doped with Er(2)O(3) (0.5 wt% in excess) was isothermally crystallized at 800 degrees C for 0-100 h to obtain transparent KNbO(3) nanostructured glass-ceramics. XRD, FESEM, TEM, FTIRRS, dielectric constant, refractive index, absorption and fluorescence measurements were carried out to analyze the morphology, dielectric, structure and optical properties of the glass-ceramics. The crystallite size of KNbO(3) estimated from XRD and TEM is found to vary in the range 7-23 nm. A steep rise in the dielectric constant of glass-ceramics with heat-treatment time reveals the formation of ferroelectric nanocrystalline KNbO(3) phase. The measured visible photoluminescence spectra have exhibited green emission transitions of (2)H(11/2), (4)S(3/2)-->(4)I(15/2) upon excitation at 377 nm ((4)I(15/2)-->(4)G(11/2)) absorption band of Er(3+) ions. The near infrared (NIR) emission transition (4)I(13/2)-->(4)I(15/2) is detected around 1550 nm on excitation at 980 nm ((4)I(15/2)-->(4)I(11/2)) of absorption bands of Er(3+) ions. It is observed that photoluminescent intensity at 526 nm ((2)H(11/2)-->(4)I(15/2)), 550 nm ((4)S(3/2)-->(4)I(15/2)) and 1550 nm ((4)I(13/2)-->(4)I(15/2)) initially decrease and then gradually increase with increase in heat-treatment time. The measured lifetime (tau(f)) of the (4)I(13/2)-->(4)I(15/2) transition also possesses a similar trend. The measured absorption and fluorescence spectra reveal that the Er(3+) ions gradually enter into the KNbO(3) nanocrystals. Copyright 2009 Elsevier B.V. All rights reserved.

  5. Field-enhanced route to generating anti-Frenkel pairs in HfO2

    Science.gov (United States)

    Schie, Marcel; Menzel, Stephan; Robertson, John; Waser, Rainer; De Souza, Roger A.

    2018-03-01

    The generation of anti-Frenkel pairs (oxygen vacancies and oxygen interstitials) in monoclinic and cubic HfO2 under an applied electric field is examined. A thermodynamic model is used to derive an expression for the critical field strength required to generate an anti-Frenkel pair. The critical field strength of EaFcr˜101GVm-1 obtained for HfO2 exceeds substantially the field strengths routinely employed in the forming and switching operations of resistive switching HfO2 devices, suggesting that field-enhanced defect generation is negligible. Atomistic simulations with molecular static (MS) and molecular dynamic (MD) approaches support this finding. The MS calculations indicated a high formation energy of Δ EaF≈8 eV for the infinitely separated anti-Frenkel pair, and only a decrease to Δ EaF≈6 eV for the adjacent anti-Frenkel pair. The MD simulations showed no defect generation in either phase for E <3 GVm-1 , and only sporadic defect generation in the monoclinic phase (at E =3 GVm-1 ) with fast (trec<4 ps ) recombination. At even higher E but below EaFcr both monoclinic and cubic structures became unstable as a result of field-induced deformation of the ionic potential wells. Further MD investigations starting with preexisting anti-Frenkel pairs revealed recombination of all pairs within trec<1 ps , even for the case of neutral vacancies and charged interstitials, for which formally there is no electrostatic attraction between the defects. In conclusion, we find no physically reasonable route to generating point-defects in HfO2 by an applied field.

  6. Biotransformation of 2,3,3,3-tetrafluoropropene (HFO-1234yf)

    International Nuclear Information System (INIS)

    Schuster, Paul; Bertermann, Ruediger; Snow, Timothy A.; Han Xing; Rusch, George M.; Jepson, Gary W.; Dekant, Wolfgang

    2008-01-01

    2,3,3,3-Tetrafluoropropene (HFO-1234yf) is a non-ozone-depleting fluorocarbon replacement with a low global warming potential which has been developed as refrigerant. The biotransformation of HFO-1234yf was investigated after inhalation exposure. Male Sprague-Dawley rats were exposed to air containing 2000, 10,000, or 50,000 ppm HFO-1234yf for 6 h and male B6C3F1 mice were exposed to 50,000 ppm HFO-1234yf for 3.5 h in a dynamic exposure chamber (n = 5/concentration). After the end of the exposure, animals were individually housed in metabolic cages and urines were collected at 6 or 12-hour intervals for 48 h. For metabolite identification, urine samples were analyzed by 1 H-coupled and decoupled 19 F-NMR and by LC/MS-MS or GC/MS. Metabolites were identified by 19 F-NMR chemical shifts, signal multiplicity, 1 H- 19 F coupling constants and by comparison with synthetic reference compounds. In all urine samples, the predominant metabolites were two diastereomers of N-acetyl-S-(3,3,3-trifluoro-2-hydroxy-propyl)-L-cysteine. In 19 F-NMR, the signal intensity of these metabolites represented more than 85% (50,000 ppm) of total 19 F related signals in the urine samples. Trifluoroacetic acid, 3,3,3-trifluorolactic acid, 3,3,3-trifluoro-1-hydroxyacetone, 3,3,3-trifluoroacetone and 3,3,3-trifluoro-1,2-dihydroxypropane were present as minor metabolites. Quantification of N-acetyl-S-(3,3,3-trifluoro-2-hydroxy-propyl)-L-cysteine by LC/MS-MS showed that most of this metabolite (90%) was excreted within 18 h after the end of exposure (t 1/2 app. 6 h). In rats, the recovery of N-acetyl-S-(3,3,3-trifluoro-2-hydroxy-propyl)-L-cysteine excreted within 48 h in urine was determined as 0.30 ± 0.03, 0.63 ± 0.16, and 2.43 ± 0.86 μmol at 2000, 10,000 and 50,000 ppm, respectively suggesting only a low extent (<< 1% of dose received) of biotransformation of HFO-1234yf. In mice, the recovery of this metabolite was 1.774 ± 0.4 μmol. Metabolites identified after in vitro incubations of HFO

  7. Effect of Gd3+ substitution on structural, magnetic, dielectric and optical properties of nanocrystalline CoFe2O4

    Science.gov (United States)

    Joshi, Seema; Kumar, Manoj; Chhoker, Sandeep; Kumar, Arun; Singh, Mahavir

    2017-03-01

    Nanoparticles of CoGdxFe2-xO4 with x=0.0, 0.03, 0.05, 0.07, 0.10 and 0.15 were synthesized by co-precipitation method. Gd3+ substitution effect on different properties of nanocrystalline CoFe2O4 has been studied. X-ray diffraction and Raman spectroscopy confirmed the formation of single phase cubic mixed spinel structure. Cation distribution has been proposed from Rietveld refined data. Mössbauer spectra at room temperature showed two ferrimagnetic Zeeman sextets with one superparamagnetic doublet. Mössbauer parameters suggested that Gd3+ ions occupy the octahedral site in CoFe2O4. Room temperature magnetic measurements exhibited that the saturation magnetization decreased from 91 emu/gm to 54 emu/gm for x=0.0 to 0.15 samples. The coercivity decreased from 1120 Oe to 340 Oe for x=0.0 to 0.07 samples and increased from 400 Oe to 590 Oe for x=0.10 and 0.15 samples, respectively. Raman analysis showed that the degree of inversion with Gd3+ substitution supporting the variation of coercivity. Electron spin resonance spectra revealed the dominancy of superexchange interactions in these samples. Optical band gap measurement suggested that all samples are indirect band gap materials and band gap has been decreased with Gd3+ substitution. Both dielectric constant and dielectric loss is found to decrease because of the decrease in hopping rate with the Gd3+ substitution for Fe3+ at the octahedral sites. Low dielectric loss suggested the applicability of Gd3+ doped CoFe2O4 nanoparticles for high frequency microwave device applications.

  8. Cu k-edge studies of the charge carries in Th-doped cuprate system R2-xThxCuO4-δ (R = Nd, Sm and Gd)

    International Nuclear Information System (INIS)

    Liang, G.; Yi, Y.; Jardim, R.F.; Wang, L.V.

    1999-01-01

    To further study the charge carrier concentration in electron doped cuprate superconductors, a systematic x-ray absorption near edge structure (XANES) measurement has been carried out on Th-doped superconductor system R 2-x Th x CuO 4-δ (R = Nd, Sm, and Gd). The XANES results show that, similar to the Ce-doped compounds, while the intensity of the Cu 1+ 4p π feature increase with the increase of the Th doping level x, the intensities of the Cu 2+ 4p π and 4p σ features decreases. This clearly indicates that the electrons doped by the Th atoms are injected into the local Cu 3d-orbitals. The normalized Cu 1+ 4p π intensity data show that the Cu 1+ concentration in the Th-doped compound series with different R-elements is linearly proportional to the Th doping-level x. The data suggest that both Ce and Th donate the same fraction of electrons into the Cu sites

  9. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    Science.gov (United States)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  10. Thermal conductivity of ferrimagnet GdBaMn2O5.0 single crystals

    Directory of Open Access Journals (Sweden)

    J. C. Wu

    2017-05-01

    Full Text Available GdBaMn2O5.0 is a double-perovskite ferrimagnet consisting of pyramidal manganese layers. In this work, we study the in-plane and the c-axis thermal conductivities of GdBaMn2O5.0 single crystals at low temperatures down to 0.3 K and in high magnetic fields up to 14 T. The κc(T curve shows a broad hump below the Néel temperature (TN = 144 K, which indicates the magnon heat transport along the c axis. Whereas, the κa(T shows a kink at TN, caused by a magnon-phonon scattering effect. This anisotropic behavior is caused by the anisotropy of spin interactions along different directions. At very low temperatures, magnetic-field-induced changes of κa and κc, which is likely due to phonon scattering by free Gd3+ spins, is rather weak. This indicates that the spin coupling between Gd3+ and Mn2+/Mn3+ is rather strong at low temperatures.

  11. Faraday rotation and photoluminescence in heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics.

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A; Wondraczek, Lothar

    2015-03-10

    We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400-1500 nm is found for a Tb(3+) concentration of ~6.5 × 10(21) cm(-3). For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb(3+) photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10(-21) cm(2) for ~ 5.0 × 10(21) cm(-3) Tb(3+). This results in an optical gain parameter σem*τ of ~2.5 × 10(-24) cm(2)s, what could be of interest for implementation of a Tb(3+) fiber laser.

  12. Faraday rotation and photoluminescence in heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A.; Wondraczek, Lothar

    2015-01-01

    We report on the magneto-optical (MO) properties of heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb3+ ion concentration of up to 9.7 × 1021 cm−3, the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400–1500 nm is found for a Tb3+ concentration of ~6.5 × 1021 cm−3. For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb3+ photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10−21 cm2 for ~ 5.0 × 1021 cm−3 Tb3+. This results in an optical gain parameter σem*τ of ~2.5 × 10−24 cm2s, what could be of interest for implementation of a Tb3+ fiber laser. PMID:25754819

  13. SHI induced effects on the electrical and optical properties of HfO_2 thin films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P.

    2016-01-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO_2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO_2 is the only alternative to reduce the leakage current. HfO_2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO_2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO_2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  14. Multi-component Ce doped (Gd,Y,La,Lu)3(AlGaSc)5O12 garnets – A new story in the development of scintillating single crystalline film screens

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Fedorov, A.; Wrzesinski, H.; Vasylkiv, Ya.

    2013-01-01

    The paper is dedicated to development of the scintillators based on single crystalline films of Ce doped (GdLaYLu) 3 (AlGaSc) 5 O 12 multi-component garnets onto Gd 3 Ga 5 O 12 substrates using the liquid phase epitaxy method. -- Highlights: •Growth of Ce doped (GdYLaLu) 3 (AlGaSc) 5 O 12 garnets films by LPE method. •Luminescent and scintillation properties of Ce doped (GdYLaLu) 3 (AlGaSc) 5 O 12 films. •Influence of Pb 2+ flux related impurity on the light yield of Ce 3+ emission

  15. A novel ferrimagnetic irido-cuprate: IrSr2GdCu2O8

    International Nuclear Information System (INIS)

    Dos Santos-Garcia, A.J.; Aguirre, Myriam H.; Moran, E.; Saez Puche, R.; Alario-Franco, M.A.

    2006-01-01

    We have performed an investigation of the structural, microstructural and magnetic properties of the new compound IrSr 2 GdCu 2 O 8 . The sample was prepared under high temperature (∼1393K) and high-pressure conditions (∼60Kbars) in a Belt type apparatus. X-ray diffraction (XRD) analysis shows that this irido-cuprate is isostructural with the corresponding Ru-1212 phase. Structurally, this material shows an interesting hierarchy of ordering phenomena, whose observation actually depends on the technique used to analyze the material: from a 'simple' cell a p xa p x3a p which is supported by XRD, through a 'diagonal' one, ∼2a p x2a p x3a p as seen by SAED, to a microdomain texture of this last one cell supported by HREM. A ferrimagnetic Ir IV -Gd III spin ordering is observed below 15K. The iridium oxidation state seems to be +4

  16. Laser conditioning effect on HfO2/SiO2 film

    International Nuclear Information System (INIS)

    Wei Yaowei; Zhang Zhe; Liu Hao; Ouyang Sheng; Zheng Yi; Tang Gengyu; Chen Songlin; Ma Ping

    2013-01-01

    Laser conditioning is one of the important methods to improve the laser damage threshold of film optics. Firstly, a large aperture laser was used to irradiate the HfO 2 /SiO 2 reflectors, which were evaporated from hafnia and silica by e-beam. Secondly, a laser calorimeter was used to test the film absorption before and after laser irradiation. Focused ion beam (FIB) was few reported using on laser film, it was used to study the damage morphology and explore the cause of damage. The shooting of the partial ejection on nodule was obtained for the first time, which provided the basis for study the damage process. The results show that film absorption was decreased obviously after the laser irradiation, laser conditioning can raise the laser damage threshold by the 'cleaning mechanism'. For the HfO 2 /SiO 2 reflectors, laser conditioning was effective to eject the nodules on substrate. It resulted from the nodule residue not to affect the subsequent laser. In addition, laser conditioning was not effective to the nodule in the film, which might be from the material spatter in coating process. In this case, other method could be used to get rid of the nodules. (authors)

  17. Catalytic properties of pure and K{sup +}-doped Cu O/Mg O system towards 2-propanol conversion

    Energy Technology Data Exchange (ETDEWEB)

    El-Molla, S. A.; Amin, N. H.; Hammed, M. N.; Sultan, S. N. [Ain Shams University, Faculty of Education, Chemistry Department, Roxy, Heliopolis, Cairo 11757 (Egypt); El-Shobaky, G. A., E-mail: saharelmolla@yahoo.com [National Research Center, Dokki, Cairo (Egypt)

    2013-08-01

    Cu O/Mg O system having different compositions was prepared by impregnation method followed by calcination at 400-900 C. The effect of Cu O content, calcination temperature and doping with small amounts of K{sup +} species (1-3 mol %) on physicochemical, surface and catalytic properties of the system were investigated using X-ray diffraction, adsorption of N{sub 2} at - 196 C, and conversion of isopropyl alcohol at 150-400 C using a flow technique. The results revealed that the solids having the formulae 0.2 and 0.3 Cu O/Mg O calcined at 400 C consisted of nano sized Mg O and Cu O as major phases together with Cu{sub 2}O as minor phase. The Bet-surface areas of different absorbents are decreased by increasing Cu O content, calcination temperature and K{sup +}-doping. Mg O-support material showed very small catalytic activity in 2-propanol conversion. The investigated system behaved as selective catalyst for dehydrogenation of 2-propanol with selectivity >80%. The catalytic activity increased by increasing Cu O content and decreased by increasing the calcination temperature within 400-900 C. K{sup +}-doping increased the catalytic activity and catalytic durability. (Author)

  18. The spectral characteristics of Gd sub 2 SiO sub 5 :Eu sup 3 sup + in VUV-UV range

    CERN Document Server

    Chen Yong; Wei Ya Guang; Tao Ye

    2002-01-01

    Synchrotron radiation source was used to investigated the spectral characteristics of Gd sub 2 SiO sub 5 :Eu sup 3 sup + in VUV-UV range. The various energy transfers at room temperature and 10 K, including from host or Gd sup 3 sup + ions to Eu sup 3 sup + ions and transfer between Eu sup 3 sup + ions at two different lattice sites, were discussed. In addition the emission spectra under 186 nm and 276 nm excitation were compared from the view of quantum cutting. The results indicate that Gd sub 2 SiO sub 5 :Eu sup 3 sup + is a kind of material with potential high efficiency quantum cutting

  19. Technological aspects concerning the production procedures of UO2-Gd2O3 nuclear fuel

    International Nuclear Information System (INIS)

    Durazzo, Michelangelo; Riella, Humberto Gracher

    2007-01-01

    The direct incorporation of Gd 2 O 3 powder into UO 2 powder by dry mechanical blending is the most attractive process for producing UO 2 -Gd 2 O 3 nuclear fuel. However, previous experimental results by our group indicated that pore formation due to the Kirkendall effect delays densification and, consequently, diminishes the final density of this type of nuclear fuel. Considering this mechanism as responsible for the poor sintering behavior of UO 2 -Gd 2 O 3 fuel prepared by the mechanical blending method, it was possible to propose, discuss and, in certain cases, preliminarily test feasible adjustments in fabrication procedures that would minimize, or even totally compensate, the negative effects of pore formation due to the Kirkendall effect. This work presents these considerations. (author)

  20. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

    Science.gov (United States)

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-03-01

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

  1. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

    Science.gov (United States)

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-03-02

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.

  2. Evaluation of GdBaCo{sub 2}O{sub 5+{delta}} as cathode material for doped lanthanum gallate electrolyte IT-SOFCs

    Energy Technology Data Exchange (ETDEWEB)

    Tarancon, A. [Department of Inorganic Chemistry, University of La Laguna, La Laguna, Tenerife (Spain); EME/XaRMAE/IN, Department of Electronics, University of Barcelona (Spain); Marrero-Lopez, D.; Ruiz-Morales, J.C.; Nunez, P. [Department of Inorganic Chemistry, University of La Laguna, La Laguna, Tenerife (Spain); Pena-Martinez, J.

    2008-10-15

    The layered perovskite GdBaCo{sub 2}O{sub 5+{delta}} (GBCO), recently proposed for intermediate temperature solid oxide fuel cell applications, was investigated and compared with Ba{sub 0.5}Sr{sub 0.5}Co{sub 0.8}Fe{sub 0.2}O{sub 3-{delta}} (BSCF) cathode material using La{sub 0.9}A{sub 0.1}Ga{sub 0.8}Mg{sub 0.2}O{sub 2.85} (A=Sr,Ba) as electrolytes. Area-specific resistance was measured by impendance spectroscopy in symmetrical cells. The cobaltites were prepared by a modified citrate sol-gel route and tested as cathode materials for doped lanthanum gallate-based cells using dry H{sub 2} as fuel and air as oxidant, rendering power density values of 180 and 240 mW cm {sup -2} at 1,073 K (1 mm thick pellets) for GBCO and BSCF fuel cells, respectively. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  3. Melt-processed Gd-Ba-Cu-O superconductor with trapped field of 3 T at 77 K

    International Nuclear Information System (INIS)

    Nariki, S; Sakai, N; Murakami, M

    2005-01-01

    We fabricated a single-domain Gd-Ba-Cu-O bulk superconductor 65 mm in diameter and studied the microstructure, superconducting and field-trapping properties. Melt-processing was performed under a controlled oxygen partial pressure of 1.0% using a precursor containing Gd123 and Gd211 powders in a molar ratio of 2:1, with 0.5 wt% of Pt and 20 wt% of Ag 2 O added. The distribution of Ag and Gd211 particles was almost homogeneous. The addition of Ag was very effective in reducing the amount of cracking in the sample. The maximum trapped magnetic field recorded was 3.05 T at 77 K. We also measured the trapped field between two Gd-Ba-Cu-O bulk samples in order to minimize the demagnetizing effect and found that the trapped field reached 4.3 T at 77 K

  4. Chemical states and electronic structure of a HfO(-2)/Ge(001) interface

    International Nuclear Information System (INIS)

    Seo, Kang-ill; McIntyre, Paul C.; Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; SLAC, SSRL; Saraswat, Krishna C.; Stanford U., Elect. Eng. Dept.

    2005-01-01

    We report the chemical bonding structure and valence band alignment at the HfO 2 /Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO 2 film using a dilute HF-solution. We found that a very non-stoichiometric GeO x layer exists at the HfO 2 /Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO x was determined to be ΔE v (Ge-GeO x ) = 2.2 ± 0.15 eV, and that between Ge and HfO 2 , ΔE v (Ge-HfO 2 ) = 2.7 ± 0.15 eV

  5. Gd_2O_3 nanoparticles stabilized by hydrothermally modified dextrose for positive contrast magnetic resonance imaging

    International Nuclear Information System (INIS)

    Babić-Stojić, Branka; Jokanović, Vukoman; Milivojević, Dušan; Požek, Miroslav; Jagličić, Zvonko; Makovec, Darko; Arsikin, Katarina; Paunović, Verica

    2016-01-01

    Gd_2O_3 nanoparticles of a few nm in size and their agglomerates dispersed in dextrose derived polymer template were synthesized by hydrothermal treatment. The produced nanosized material was investigated by TEM, FTIR spectroscopy, SQUID measurements and NMR relaxometry. Biological evaluation of this material was done by crystal violet and MTT assays to determine the cell viability. Longitudinal and transverse NMR relaxivities of water diluted Gd_2O_3 nanoparticle dispersions measured at the magnetic field of 1.5 T, estimated to be r_1(Gd_2O_3)=9.6 s"−"1 mM"−"1 in the Gd concentration range 0.1–30 mM and r_2(Gd_2O_3)=17.7 s"−"1 mM"−"1 in the lower concentration range 0.1–0.8 mM, are significantly higher than the corresponding relaxivities measured for the standard contrast agent r_1(Gd-DTPA)=4.1 s"−"1 mM"−"1 and r_2(Gd-DTPA)=5.1 s"−"1 mM"−"1. The ratio of the two relaxivities for Gd_2O_3 nanoparticles r_2/r_1=1.8 is suitable for T_1-weighted imaging. Good MRI signal intensities of the water diluted Gd_2O_3 nanoparticle dispersions were recorded at lower Gd concentrations 0.2–0.8 mM. The Gd_2O_3 samples did not exert any significant cytotoxic effects at Gd concentrations of 0.2 mM and below. These properties of the produced Gd_2O_3 nanoparticles in hydrothermally modified dextrose make them promising for potential application in MRI for the design of a positive MRI contrast agent. - Highlights: • Gd_2O_3 nanoparticles (NPs) were stabilized by hydrothermally modified dextrose. • Magnetic moment per Gd"3"+ ion in the Gd_2O_3 NPs is much lower than that in the bulk. • The ratio r_2/r_1=1.8 for Gd_2O_3 NPs dispersions is favorable for T_1-weighted MRI. • Gd_2O_3 NPs dispersions had good MRI signal intensity just at lower Gd concentrations. • Gd concentrations of 0.2 mM and below in the Gd_2O_3 NPs dispersions were not toxic.

  6. Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  7. Spectroscopic properties and energy transfer analysis of Tm3+-doped BaF2-Ga2O3-GeO2-La2O3 glass.

    Science.gov (United States)

    Yu, Shenglei; Yang, Zhongmin; Xu, Shanhui

    2010-05-01

    This paper reports on the spectroscopic properties and energy transfer analysis of Tm(3+)-doped BaF(2)-Ga(2)O(3)-GeO(2)-La(2)O(3) glasses with different Tm(2)O(3) doping concentrations (0.2, 0.5, 2.0, 2.5, 3.0, 3.5, 3.5, 4.0 wt%). Mid-IR fluorescence intensities in the range of 1,300 nm-2,200 nm have been measured when excited under an 808 nm LD for all the samples with the same pump power. Energy level structure and Judd-Ofelt parameters have been calculated based on the absorption spectra of Tm(3+), cross-relaxation rates and multi-phonon relaxation rates have been estimated with different Tm(2)O(3) doping concentrations. The maximum fluorescence intensity at around 1.8 mum has been obtained in Tm(2)O(3)-3 wt% sample and the maximum value of calculated stimulated emission cross-section of Tm(3+) in this sample is about 0.48 x 10(-20) cm(2) at 1,793 nm, and there is not any crystallization peak in the DSC curve of this sample, which indicate the potential utility of Tm(3+)-doped BaF(2)-Ga(2)O(3)-GeO(2)- La(2)O(3) glass for 2.0-microm optical fiber laser.

  8. Hot spot in GdBa2Cu3O7-δ-based composite ceramics rods and their applications for oxygen sensors

    International Nuclear Information System (INIS)

    Okamoto, T; Takata, M

    2011-01-01

    A hot spot, which is a local area glowing orange, appears in a LnBa 2 Cu 3 O 7-δ (Ln: rare earth element) ceramic rod when a voltage exceeding a certain value is applied to the rod at room temperature. After the appearance of the hot spot, the current changes according to the oxygen partial pressure in ambient atmosphere, which acts as an oxygen sensor without the need for any heating system. The GdBa 2 Cu 3 O 7-δ rod tended to be melted and broken by a sustained presence of the hot spot in a high oxygen partial pressure Po 2 (∼100 kPa). The composite rod containing high melting point materials, such as BaAl 2 O 4 , BaZrO 3 and Gd 2 BaCuO 5 , showed a remarkable high durability in O 2 atmosphere. In a low Po 2 ( 2 Cu3O 7-δ rod decreases to almost zero and the hot spot disappeared, resulting in an insensitive rod to oxygen. The composite rod containing CuO detected oxygen even in Po 2 < 0.002 kPa.

  9. Studies on the Sintering Behaviour of UO2-Gd2O3 Nuclear Fuel

    International Nuclear Information System (INIS)

    Durazzo, Michelangelo; Gracher Riella, Humberto

    2008-01-01

    The incorporation of gadolinium directly into nuclear power reactor fuel is important from the point of reactivity compensation and adjustment of power distribution enabling thus longer fuel cycles and optimized fuel utilization. The incorporation of Gd 2 O 3 powder directly into the UO 2 powder by dry mechanical blending is the most attractive process because of its simplicity. Nevertheless, processing by this method leads to difficulties while obtaining sintered pellets with the minimum required density. This is due to blockages during the sintering process. There is little information in published literature about the possible mechanism for this blockage and this is restricted to the hypothesis based on formation of a low diffusivity Gd rich (U,Gd)O 2 phase. Experimental evidences indicated the existence of phases in the (U,Gd)O 2 system with structure different from the fluorite type structure of UO 2 . The apparition of these new phases coincides with the lowering of the density after sintering and with the lowering of the interdiffusion coefficient. However, it has been shown experimentally that the sintering blockage phenomena cannot be explained on the basis of the formation of low diffusivity Gd rich (U,Gd)O 2 phases. The work was continued to investigate other possible blocking mechanism. (authors)

  10. Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

    Science.gov (United States)

    Dong, Zhipeng; Cao, Xi; Wu, Tong; Guo, Jing

    2018-03-01

    Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k . p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

  11. Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures.

    Science.gov (United States)

    Nogales, E; Hidalgo, P; Lorenz, K; Méndez, B; Piqueras, J; Alves, E

    2011-07-15

    Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologies of the nanostructures were observed after ion implantation and thermal annealing. The luminescence emission properties have been studied with cathodoluminescence (CL) in a scanning electron microscope (SEM). Both β-Ga(2)O(3) and GeO(2) structures implanted with Eu show the characteristic red luminescence peak centered at around 610 nm, due to the (5)D(0)-(7)F(2) Eu(3+) intraionic transition. Sharpening of the luminescence peaks after thermal annealing is observed in Eu implanted β-Ga(2)O(3), which is assigned to the lattice recovery. Gd(3+) as-implanted samples do not show rare earth related luminescence. After annealing, optical activation of Gd(3+) is obtained in both matrices and a sharp ultraviolet peak centered at around 315 nm, associated with the Gd(3+) (6)P(7/2)-(8)S(7/2) intraionic transition, is observed. The influence of the Gd ion implantation and the annealing temperature on the gallium oxide broad intrinsic defect band has been analyzed.

  12. Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures

    International Nuclear Information System (INIS)

    Nogales, E; Hidalgo, P; Mendez, B; Piqueras, J; Lorenz, K; Alves, E

    2011-01-01

    Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologies of the nanostructures were observed after ion implantation and thermal annealing. The luminescence emission properties have been studied with cathodoluminescence (CL) in a scanning electron microscope (SEM). Both β-Ga 2 O 3 and GeO 2 structures implanted with Eu show the characteristic red luminescence peak centered at around 610 nm, due to the 5 D 0 - 7 F 2 Eu 3+ intraionic transition. Sharpening of the luminescence peaks after thermal annealing is observed in Eu implanted β-Ga 2 O 3 , which is assigned to the lattice recovery. Gd 3+ as-implanted samples do not show rare earth related luminescence. After annealing, optical activation of Gd 3+ is obtained in both matrices and a sharp ultraviolet peak centered at around 315 nm, associated with the Gd 3+ 6 P 7/2 - 8 S 7/2 intraionic transition, is observed. The influence of the Gd ion implantation and the annealing temperature on the gallium oxide broad intrinsic defect band has been analyzed.

  13. Improved flux-pinning properties of REBa{sub 2}Cu{sub 3}O{sub 7-z} films by low-level Co doping

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wentao; Pu, Minghua; Wang, Weiwei; Lei, Ming [Key Laboratory of Magnetic Levitation and Maglev Trains, Ministry of Education of China, Superconductivity R and D Centre (SRDC), Southwest Jiaotong University, Erhuanlu Beiyiduan 111, 610031 Chengdu (China); Cheng, Cuihua [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, 2052 NSW, Sydney (Australia); Zhao, Yong [Key Laboratory of Magnetic Levitation and Maglev Trains, Ministry of Education of China, Superconductivity R and D Centre (SRDC), Southwest Jiaotong University, Erhuanlu Beiyiduan 111, 610031 Chengdu (China); Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, 2052 NSW, Sydney (Australia)

    2011-09-15

    Biaxially textured REBa{sub 2}Cu{sub 3-x}Co{sub x}O{sub 7-z} (RE = Gd,Y) films were prepared on (00l) LaAlO{sub 3} substrate using self-developed fluorine-free chemical solution deposition (CSD) approach. The in-field J{sub c} values are significantly improved for REBa{sub 2}Cu{sub 3-x}Co{sub x}O{sub 7-z} films through low-level Co doping. Co-doped GdBa{sub 2}Cu{sub 3}O{sub 7-z} film shows the highest J{sub c} values at higher temperatures and fields, whereas the J{sub c} values of Co-doped YBa{sub 2}Cu{sub 3}O{sub 7-z} film surpass that of other films at lower temperatures and fields. In addition, the volume pinning force densities of films with Co doping have been distinctly enhanced in the applied fields, indicating improved flux-pinning properties. The possible reasons are discussed in detail. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Enhanced critical currents in (Gd,Y)Ba2Cu3Ox superconducting tapes with high levels of Zr addition

    International Nuclear Information System (INIS)

    Selvamanickam, V; Shi, T; Liu, Y; Khatri, N D; Liu, J; Yao, Y; Galstyan, E; Majkic, G; Chen, Y; Xiong, X; Lei, C; Soloveichik, S

    2013-01-01

    The critical current and structural properties of (Gd,Y)BaCuO tapes made by metal organic chemical vapor deposition (MOCVD) with Zr addition levels up to 30 at.% have been investigated. The reduction in critical current beyond the previously optimized Zr addition level of 7.5 at.% was found to be due to structural deterioration of the (Gd,Y)Ba 2 Cu 3 O x film. By a modified MOCVD process, enhanced critical current densities have been achieved with high levels of Zr addition, including 3.83 MA cm −2 in 15 at.% Zr-added 1.1 μm thick film at 77 K in zero magnetic field. Critical currents as high as 1072 A/12 mm have been reached in (Gd,Y)BaCuO tapes with 15 at.% Zr addition at 30 K in a field of 3 T applied perpendicular to the tape, corresponding to a pinning force value of 268 GN m −3 . The enhanced critical currents achievable with a high density of nanoscale defects by employing high levels of second-phase additions enable the performance targets needed for the use of HTS tapes in coil applications involving high magnetic fields at temperatures below 50 K to be met. (paper)

  15. Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

    Science.gov (United States)

    Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.

    2017-10-01

    A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo +) which limit electron movement through the switching layer.

  16. White-emission in single-phase Ba2Gd2Si4O13:Ce3 +,Eu2 +,Sm3 + phosphor for white-LEDs

    Science.gov (United States)

    Jiang, Xiumin; Zhang, Yuqian; Zhang, Jia

    2018-03-01

    To develop new white-light-emitting phosphor, a series of Ce3 +-Eu2 +-Sm3 + doped Ba2Gd2Si4O13 (BGS) phosphors were prepared by the solid-state reaction method, and their photoluminescence properties were studied. The Ce3 + and Eu2 + single-doped BGS show broad emission bands around in the region of 350-550 and 420-650 nm, respectively. By co-doping Ce3 +-Eu2 + into BGS, the energy transfer (ET) from Ce3 + to Eu2 + is inefficient, which could be due to the competitive absorption between the two activator ions. The Sm3 +-activated BGS exhibits an orangey-red emission in the region of 550-750 nm. To achieve white emission, the BGS:0.06Ce3 +,0.04Eu2 +,ySm3 + (0 ≤ y ≤ 0.18) phosphors were designed, in which the ET from Ce3 +/Eu2 + to Sm3 + was observed. The emission color can be tuned by controlling the Sm3 + concentration, and white emission was obtained in the BGS:0.06Ce3 +,0.04Eu2 +,0.06Sm3 + sample. The investigation of thermal luminescence stability for the typical BGS:0.06Ce3 +,0.04Eu2 +,0.06Sm3 + sample reveals that the emission intensities of both Eu2 + and Sm3 + demonstrate continuous decrease but the Ce3 + emission is enhanced gradually with increasing temperature. The corresponding reason has been discussed.

  17. Optical and scintillation characteristics of Gd.sub.2./sub.YAl.sub.2./sub.Ga.sub.3./sub.O.sub.12./sub.:Ce and Lu.sub.2./sub.YAl.sub.2./sub.Ga.sub.3./sub.O.sub.12./sub.:Ce single crystals

    Czech Academy of Sciences Publication Activity Database

    Chewpraditkul, W.; Sakthong, O.; Pattanaboonmee, N.; Chewpraditkul, We.; Szczesniak, T.; Swiderski, L.; Moszynski, M.; Kamada, K.; Yoshikawa, A.; Nikl, Martin

    2017-01-01

    Roč. 468, Jun (2017), 395–398 ISSN 0022-0248 R&D Projects: GA ČR GA16-15569S Institutional support: RVO:68378271 Keywords : Ce-doping * Czochralski method * Gd 2 YAl 2 Ga 3 O 12 :Ce * Lu 2 YAl 2 Ga 3 O 12 :Ce * luminescence * scintillator materials Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

  18. A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

    International Nuclear Information System (INIS)

    Zou, Xiao; Tong, Xingsheng; Fang, Guojia; Yuan, Longyan; Zhao, Xingzhong

    2010-01-01

    HighHfO x N y and HfO 2 films are applied to amorphous InGaZnO (a-IGZO) devices as gate dielectric using radio-frequency reactive sputtering. The electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors and thin-film transistors (TFTs) are then investigated. Experimental results indicate that the nitrogen incorporation into HfO 2 can effectively improve the interface quality and enhance the reliability of the devices. Electrical properties with an interface-state density of 5.2 × 10 11 eV −1 cm −2 , capacitance equivalent thickness of 1.65 nm, gate leakage current density of 3.4 × 10 −5 A cm −2 at V fb +1 V, equivalent permittivity of 23.6 and hysteresis voltage of 110 mV are obtained for an Al/HfO x N y /a-IGZO MIS capacitor. Superior performance of HfO x N y /a-IGZO TFTs has also been achieved with a low threshold voltage of 0.33 V, a high saturation mobility of 12.1 cm 2 V −1 s −1 and a large on–off current ratio up to 7 × 10 7 (W/L = 500/20 µm) at 3 V

  19. Thermal behaviour of GdCo1-xMnxO3 cobaltates

    Science.gov (United States)

    Thakur, Rasna; Thakur, Rajesh K.; Gaur, N. K.

    2018-05-01

    With the objective of exploring the unknown thermodynamic behavior of GdCo1-xMnxO3 family, we present here an investigation of the temperature-dependent (10K≤T≤1000K) thermodynamic properties of GdCo1-xMnxO3 (x=0.1 to 0.8). The specific heat of GdCoO3 with Mn doping in the perovskite structure at B-site has been studied by means of a Modified Rigid Ion Model (MRIM). The cohesive energy, specific heat (C), volume thermal expansion (α) and Gruneisen parameter (γ) of GdCo1-xMnxO3 compounds are also discussed.

  20. Giant strain with low cycling degradation in Ta-doped [Bi_1_/_2(Na_0_._8K_0_._2)_1_/_2]TiO_3 lead-free ceramics

    International Nuclear Information System (INIS)

    Liu, Xiaoming; Tan, Xiaoli

    2016-01-01

    Non-textured polycrystalline [Bi_1_/_2(Na_0_._8K_0_._2)_1_/_2](Ti_1_−_xTa_x)O_3 ceramics are fabricated and their microstructures and electrical properties are characterized. Transmission electron microscopy reveals the coexistence of the rhombohedral R3c and tetragonal P4bm phases in the form of nanometer-sized domains in [Bi_1_/_2(Na_0_._8K_0_._2)_1_/_2]TiO_3 with low Ta concentration. When the composition is x = 0.015, the electrostrain is found to be highly asymmetric under bipolar fields of ±50 kV/cm. A very large value of 0.62% is observed in this ceramic, corresponding to a large-signal piezoelectric coefficient d_3_3* of 1240 pm/V (1120 pm/V under unipolar loading). These values are greater than most previously reported lead-free polycrystalline ceramics and can even be compared with some lead-free piezoelectric single crystals. Additionally, this ceramic displays low cycling degradation; its electrostrain remains above 0.55% even after undergoing 10 000 cycles of ±50 kV/cm bipolar fields at 2 Hz. Therefore, Ta-doped [Bi_1_/_2(Na_0_._8K_0_._2)_1_/_2]TiO_3 ceramics show great potential for large displacement devices.

  1. Multifunctional Eu3+- and Er3+/Yb3+-doped GdVO4 nanoparticles synthesized by reverse micelle method.

    Science.gov (United States)

    Gavrilović, Tamara V; Jovanović, Dragana J; Lojpur, Vesna; Dramićanin, Miroslav D

    2014-02-27

    Synthesis of Eu(3+)- and Er(3+)/Yb(3+)-doped GdVO4 nanoparticles in reverse micelles and their multifunctional luminescence properties are presented. Using cyclohexane, Triton X-100, and n-pentanol as the oil, surfactant, and co-surfactant, respectively, crystalline nanoparticles with ~4 nm diameter are prepared at low temperatures. The particle size assessed using transmission electron microscopy is similar to the crystallite size obtained from X-ray diffraction measurements, suggesting that each particle comprises a single crystallite. Eu(3+)-doped GdVO4 nanoparticles emit red light through downconversion upon UV excitation. Er(3+)/Yb(3+)-doped GdVO4 nanoparticles exhibit several functions; apart from the downconversion of UV radiation into visible green light, they act as upconvertors, transforming near-infrared excitation (980 nm) into visible green light. The ratio of green emissions from (2)H11/2 → (2)I15/2 and (4)S3/2 → (4)I15/2 transitions is temperature dependent and can be used for nanoscale temperature sensing with near-infrared excitation. The relative sensor sensitivity is 1.11%K(-1), which is among the highest sensitivities recorded for upconversion-luminescence-based thermometers.

  2. Multifunctional Eu3+- and Er3+/Yb3+-doped GdVO4 nanoparticles synthesized by reverse micelle method

    Science.gov (United States)

    Gavrilović, Tamara V.; Jovanović, Dragana J.; Lojpur, Vesna; Dramićanin, Miroslav D.

    2014-02-01

    Synthesis of Eu3+- and Er3+/Yb3+-doped GdVO4 nanoparticles in reverse micelles and their multifunctional luminescence properties are presented. Using cyclohexane, Triton X-100, and n-pentanol as the oil, surfactant, and co-surfactant, respectively, crystalline nanoparticles with ~4 nm diameter are prepared at low temperatures. The particle size assessed using transmission electron microscopy is similar to the crystallite size obtained from X-ray diffraction measurements, suggesting that each particle comprises a single crystallite. Eu3+-doped GdVO4 nanoparticles emit red light through downconversion upon UV excitation. Er3+/Yb3+-doped GdVO4 nanoparticles exhibit several functions; apart from the downconversion of UV radiation into visible green light, they act as upconvertors, transforming near-infrared excitation (980 nm) into visible green light. The ratio of green emissions from 2H11/2 --> 2I15/2 and 4S3/2 --> 4I15/2 transitions is temperature dependent and can be used for nanoscale temperature sensing with near-infrared excitation. The relative sensor sensitivity is 1.11%K-1, which is among the highest sensitivities recorded for upconversion-luminescence-based thermometers.

  3. Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

    Science.gov (United States)

    Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir; Look, David C.; Boeckl, John J.; Brown, Jeff L.; Tetlak, Stephen E.; Green, Andrew J.; Moser, Neil A.; Crespo, Antonio; Thomson, Darren B.; Fitch, Robert C.; McCandless, Jonathan P.; Jessen, Gregg H.

    2017-07-01

    Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (20 1 ¯ ) orientation. An average conductivity of 732 S cm-1 with a mobility of 26.5 cm2 V-1 s-1 and a carrier concentration of 1.74 × 1020 cm-3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.

  4. Highly Al-doped TiO2 nanoparticles produced by Ball Mill Method: structural and electronic characterization

    International Nuclear Information System (INIS)

    Santos, Desireé M. de los; Navas, Javier; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

    2015-01-01

    Highlights: • Highly Al-doped TiO 2 nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO 2 nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti 4+ ions by Al 3+ in the TiO 2 lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature

  5. Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

    Science.gov (United States)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-04-01

    The electrical dipole moment at an ultrathin high-k (HfO2, Al2O3, TiO2, Y2O3, and SrO)/SiO2 interface and its correlation with the oxygen density ratio at the interface have been directly evaluated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. The electrical dipole moment at the high-k/SiO2 interface has been measured from the change in the cut-off energy of secondary photoelectrons. Moreover, the oxygen density ratio at the interface between high-k and SiO2 has been estimated from cation core-line signals, such as Hf 4f, Al 2p, Y 3d, Ti 2p, Sr 3d, and Si 2p. We have experimentally clarified the relationship between the measured electrical dipole moment and the oxygen density ratio at the high-k/SiO2 interface.

  6. Spectroscopic analysis and efficient diode-pumped 1.9 μm Tm3+-doped β'-Gd2(MoO4)3 crystal laser.

    Science.gov (United States)

    Tang, Jianfeng; Chen, Yujin; Lin, Yanfu; Gong, Xinghong; Huang, Jianhua; Luo, Zundu; Huang, Yidong

    2011-07-04

    Tm3+-doped β'-Gd2(MoO4)3 single crystal was grown by the Czochralski method. Spectroscopic analysis was carried out along different polarizations. End-pumped by a quasi-cw diode laser at 795 nm in a plano-concave cavity, an average laser output power of 58 mW around 1.9 μm was achieved in a 0.93-mm-thick crystal when the output coupler transmission was 7.1%. The absorbed pump threshold was 8 mW and the slope efficiency of the laser was 57%. This crystal has smooth and broad gain curve around 1.9 μm, which shows that it is also a potential gain medium for tunable and short pulse lasers.

  7. Growth of Gd{sub 2}O{sub 3} coherent layers on UO{sub 2} microsphere surface via sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, Luciana S.; Silva, Edilaine F.; Oliveira, Felipe W.F.; Pereira, Yara S.; Brandão, Alisson F.C.; Santos, Ana Maria M.; Lameiras, Fernando S.; Reis, Sergio C.; Pedrosa, Tércio A.; Santos, Armindo, E-mail: santosa@cdtn.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

    2017-07-01

    In this work, we synthesized and characterized UO{sub 2}-Gd{sub 2}O{sub 3} nuclear fuel via three routes, aiming to solve the problems arising from the addition of Gd{sub 2}O{sub 3} in UO{sub 2} matrix. By the industrial route, the mixture of powders (UO{sub 2}, <90 μ and 6 wt% Gd{sub 2}O{sub 3} <10 μm) results in pellets with 91% TD at 1677 °C/H{sub 2}/4 h. By the mixed route, the formation of Gd{sub 2}O{sub 3} coherent layers on UO{sub 2} powder (particles <90 μ) and microsphere (225 μm) surface produced UO{sub 2} - 6 wt% Gd{sub 2}O{sub 3} pellets with 95% (powder; 1625 °C/H{sub 2}/4 hr) and 83% (microsphere; 1677°C/H{sub 2}/4 hr) TD. By the sol-gel route, we obtained UO{sub 2} - 6 wt% Gd{sub 2}O{sub 3} in a deagglomerated (powder; <70 μm) or agglomerated microsphere 232 μm) form whose pellets reached > 97% (powder) and >98% (microsphere) TI) at 1677 °C/H{sub 2}/4h. According to XRD, OM, and SEM/EDS analysis, the referred three routes do not form a complete solid solution of UO{sub 2}-Gd{sub 2}O{sub 3} at the temperatures and time of sintering used; Gd{sub 2}O{sub 3} granule islands are present in the pellets originating from these routes. The obtained results suggest that the topological arrangement and the deficient nanostructuring of UO{sub 2} and Gd{sub 2}O{sub 3} phases, either in the raw material (powder and microsphere) as in their compacts, are the cause of low densification and irregular distribution of Gd{sub 2}O{sub 3} in UO{sub 2} matrix; mixing of U and Gd at the molecular level does not form a solid solution; and the mixed route is a good alternative to the industrial route. (author)

  8. Structural characterization of the CeO{sub 2}/Gd{sub 2}O{sub 3} mixed system by synchrotron X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Artini, Cristina, E-mail: c.artini@ge.ieni.cnr.it [Dipartimento di Chimica e Chimica Industriale, Universita degli Studi di Genova, Via Dodecaneso 31, 16146 Genova (Italy); Costa, Giorgio A., E-mail: costa@chimica.unige.it [Dipartimento di Chimica e Chimica Industriale, Universita degli Studi di Genova, Via Dodecaneso 31, 16146 Genova (Italy); CNR-SPIN Genova, Corso Perrone 24, 16152 Genova (Italy); Pani, Marcella, E-mail: marcella@chimica.unige.it [Dipartimento di Chimica e Chimica Industriale, Universita degli Studi di Genova, Via Dodecaneso 31, 16146 Genova (Italy); Lausi, Andrea, E-mail: andrea.lausi@elettra.trieste.it [Sincrotrone Trieste S.C.p.A., ss 14, km 163, 5, 34149 Basovizza, Trieste (Italy); Plaisier, Jasper, E-mail: jasper.plaisier@elettra.trieste.it [Sincrotrone Trieste S.C.p.A., ss 14, km 163, 5, 34149 Basovizza, Trieste (Italy)

    2012-06-15

    The structural determination of the CeO{sub 2}/Gd{sub 2}O{sub 3} mixed system is a non-trivial problem because of the close resemblance between the ionic sizes of Ce{sup 4+} and Gd{sup 3+} and between the crystal structures of CeO{sub 2} and Gd{sub 2}O{sub 3}. (Ce{sub 1-x}Gd{sub x})O{sub 2-x/2} powder samples with x ranging between 0 and 1 have been synthesized by coprecipitation of mixed oxalates and subsequent thermal decomposition in air at 1200 Degree-Sign C followed by slow cooling. Synchrotron powder X-ray diffraction data were collected and refined by the Rietveld method. Lattice parameters do not follow Vegard's law and no peak splitting has been observed for any composition, meaning that no biphasic regions exist over the whole compositional range. The same hybrid structural model - a proper mixture of the structures of the two pure oxides - was used for the refinements, allowing to account for the data observed. - graphical abstract: Substituting Ce{sup 4+} by Gd{sup 3+}, a gradual transition from the F structure (typical of CeO{sub 2}) to the C structure (typical of Gd{sub 2}O{sub 3}) takes place. The lattice parameters do not follow Vegard's law. Highlights: Black-Right-Pointing-Pointer A structural study of Ce-Gd mixed oxides has been performed. Black-Right-Pointing-Pointer In (Ce{sub 1-x}Gd{sub x})O{sub 2-x/2} a solid solution forms for 0{<=}x{<=}0.3. Black-Right-Pointing-Pointer For x>0.3 a gradual transition from the C to the F structure is observed. Black-Right-Pointing-Pointer Lattice parameters do not follow Vegard's law.

  9. Investigation of (Y,Gd)Ba2Cu3O7-x grown by MOCVD on a simplified IBAD MgO template

    International Nuclear Information System (INIS)

    Stan, L; Holesinger, T G; Maiorov, B; Civale, L; DePaula, R F; Jia, Q X; Chen, Y; Xiong, X; Selvamanickam, V

    2010-01-01

    We have used an ion beam sputtered Y 2 O 3 -Al 2 O 3 (YALO) composite to simplify the architecture of high temperature superconducting (HTS) coated conductors (CCs) based on a IBAD MgO template. By implementing YALO, we have reduced the total non-superconducting layers between the polycrystalline metal substrate and the superconducting film from five (the standard architecture) to four. Well textured (Y,Gd)Ba 2 Cu 3 O 7-x ((Y, Gd)BCO) films have been successfully grown by MOCVD on this simplified template. The microstructural characterization revealed that all layers are continuous and uniform with sharp and clean interfaces. Additionally, the YALO maintained its amorphous nature after the deposition of the superconductive layer, which is a plus in terms of its efficiency as a diffusion barrier. The achievement of a self-field critical current of 230 A cm -1 at 75.5 K is another proof of the effectiveness of YALO as a diffusion barrier and nucleation seed for the MgO. The transport properties under an applied magnetic field of MOCVD grown (Y, Gd)BCO on LMO buffered MgO/YALO/Ni-alloy are comparable with those of (Y, Gd)BCO on a standard architecture, thus demonstrating good compatibility between the simplified template with the MOCVD grown (Y, Gd)BCO. The use of a single composite YALO layer instead of individual layers of Y 2 O 3 and Al 2 O 3 for the large scale fabrication of HTS CCs based on IBAD MgO provides advantages such as potentially reduced cost due to the reduced number of fabrication steps.

  10. Two-dimensional TiO_2-based nanosheets co-modified by surface-enriched carbon dots and Gd_2O_3 nanoparticles for efficient visible-light-driven photocatalysis

    International Nuclear Information System (INIS)

    Lu, Dingze; Fang, Pengfei; Ding, Junqian; Yang, Minchen; Cao, Yufei; Zhou, Yawei; Peng, Kui; Kondamareddy, Kiran Kumar; Liu, Min

    2017-01-01

    Highlights: • Gd-C-TNSs with high stability and recycle usability were prepared by two-pot method. • Gd_2O_3 loading results in the structure changes of TNSs and increase of the Ti"3"+ ions. • Modified CDs leads to obvious increase of optical absorption ability and red shift. • Appropriate amount of Gd_2O_3 nanoparticles and CDs improve the separation of charges. • Gd-C-TNSs exhibit excellent synergistic photocatalytic activity for Cr(VI) and RhB. - Abstract: Two-dimensional TiO_2-based nanosheets (TNSs) co-modified by surface-enriched carbon dots (CDs) and Gd_2O_3 nanoparticles: (Gd-C-TNSs), capable of exhibiting visible-light-driven photo catalysis were synthesized using a two-pot hydrothermal route. The samples had a sheet-like structure, thickness of approximately 3.6 nm, large specific surface area of 240–350 cm"2/g. The CDs (23 nm) and Gd_2O_3 nanoparticles (1–2 nm) were highly dispersed over the surface of the nanosheets. The co-modification by Gd_2O_3 nanoparticles and CDs influenced the crystallinity, crystal structure, and surface area of the TNSs, and improved the visible-light absorption. Surface photocurrent and fluorescence spectral studies revealed that the photo-generated charge carrier separation efficiency could be improved by an appropriate amount of modification. A very high efficiency was obtained using 0.5 at% Gd/Ti and 3.0 g/L of CDs. The visible-light-induced photocatalytic activity is enhanced under the isolated Cr(VI) system, isolated Rhodamin B (RhB) system, and the synergism between RhB degradation and Cr(VI) reduction for the Gd-C-TNSs photocatalysts. Initially, the photocatalytic activity gradually increased with an increase in the amount of CDs, and then decreased after attaining a maximum, in the case where 0.5 at% Gd/Ti and 3.0 g/L of CDs were used. The enhancement in the photocatalytic activity was attributed to the synergetic effect of the Gd_2O_3 nanoparticles, TNSs, and CDs in the Gd-C-TNSs composites. The

  11. Room temperature magnetic ordering, enhanced magnetization and exchange bias of GdMnO_3 nanoparticles in (GdMnO_3)_0_._7_0(CoFe_2O_4)_0_._3_0

    International Nuclear Information System (INIS)

    Mitra, A.; Mahapatra, A.S.; Mallick, A.; Chakrabarti, P.K.

    2017-01-01

    Nanoparticles of GdMnO_3 (GMO) are prepared by sol-gel method. To enhance the magnetic property and also to obtain the magnetic ordering at room temperature (RT), nanoparticles of GMO are incorporated in the matrix of CoFe_2O_4 (CFO). Desired crystallographic phases of CFO, GMO and GMO-CFO are confirmed by analyzing X-ray diffractrograms (XRD) using Rietveld method. The average size of nanoparticles and their distribution, crystallographic phase, nanocrystallinity etc. are studied by high-resolution transmission electron microscope (HRTEM). Magnetic hysteresis loops (M-H) of GMO-CFO under zero field cooled (ZFC) and field cooled (FC) conditions are observed at different temperatures down to 5 K. Magnetization vs. temperature (M-T) under ZFC and FC conditions are also recorded. Interestingly, exchange bias (EB) is found at low temperature which suggests the encapsulation of the ferromagnetic (FM) nanoparticles of GMO by the ferrimagnetic nanoparticles of CFO below ~100 K. Enhanced magnetization, EB effect and RT magnetic ordering of GMO-CFO would be interesting for both theoretical and experimental investigations. - Highlights: • Nanoparticles of GdMnO_3 are incorporated in the matrix of CoFe_2O_4. • RT magnetic ordering of GMO nanoparticles in GMO-CFO is observed. • Magnetic property of GMO-CFO is highly enhanced compared to GMO. • Exchange bias is found in GMO-CFO at low temperature.

  12. Conductivity in alkali doped CoO-B2O3 glasses

    International Nuclear Information System (INIS)

    Nagaraja, N; Sankarappa, T; Santoshkumar; Sadashivaiah, P J; Yenkayya

    2009-01-01

    Two series of cobalt-borate glasses doped with Li 2 O and K 2 O in single and mixed proportions have been synthesized by melt quenching method and investigated for ac conductivity in the frequency range of 50Hz to 5MHz and temperature range of 310K to 610K. From the measured total conductivity, the pure ac component and its frequency exponent, s were determined. In the single alkali doped glasses, for all the frequencies, the conductivity increased with increase of Li 2 O up to 0.4 mole fractions and decreased for further increase of Li 2 O. The temperature dependence of conductivity has been analyzed using Mott's small polaron hopping model and activation energy for ac conduction has been determined. Based on conductivity and activation behaviors, in single alkali glasses, a change over of conduction mechanism predominantly from ionic to electronic has been predicted. In mixed alkali doped glasses, the conductivity passed through minimum and activation energy passed through maximum for second alkali (K 2 O) content of 0.2 mole fractions. This result revealed the mixed alkali effect to be occurring at 0.2 mole fractions of K 2 O. The frequency exponent, s, was compared with theoretical models such as Quantum Mechanical Tunneling and Correlated Barrier Hopping models and found them to be inadequate to explain the experimental observations. Time-temperature superposition principle has been verified in both the sets of glasses.

  13. Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

    International Nuclear Information System (INIS)

    Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi

    2015-01-01

    The thermal diffusion of germanium and oxygen atoms in HfO 2 /GeO 2 /Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that 18 O-tracers composing the GeO 2 underlayers diffuse within the HfO 2 overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO 2 also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO 2 surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO x interlayers between the HfO 2 and GeO 2 layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks

  14. Ortho-vanadates K3RE(VO4)2 (RE = La, Pr, Eu, Gd, Dy, Y) for near UV-converted phosphors

    International Nuclear Information System (INIS)

    Qin, Lin; Wei, Dong-Lei; Huang, Yanlin; Qin, Chuanxiang; Cai, Peiqing; Kim, Sun-Il; Seo, Hyo-Jin

    2014-01-01

    The orthovanadate poly-crystals K 3 RE(VO 4 ) 2 (RE = La, Pr, Eu, Gd, Dy, Y) were synthesized via the solid-state reaction route. The crystal phase formation was verified through X-ray diffraction (XRD) studies and was performed by structural refinements. The optical properties were also investigated in detail. K 3 RE(VO 4 ) 2 (RE = Eu, Dy, Gd, Pr, La, Y) phosphors present different luminescence behaviors: the profiles of excitation and emission spectra, the spectra shift, the luminescence decay lifetimes, the absolute quantum efficiency (QE), and the CIE color coordinates are very different. The luminescence of K 3 RE(VO 4 ) 2 (RE = La, Gd, Y, Pr) presents yellow or yellowish green color, while, K 3 Dy(VO 4 ) 2 and K 3 Eu(VO 4 ) 2 show white and red luminescence, respectively. This was discussed on the base of the different micro-structure, activator centers, and the charge transfer transitions from [VO 4 ] 3− groups in the lattices. K 3 Y(VO 4 ) 2 and K 3 Eu(VO 4 ) 2 show higher QE values of 47.0% and 45.0% at room temperature, respectively. All the phosphors have efficient absorption in the region of near-UV wavelengths or blue wavelength region. This can well match with the light from UV-LED (360–400 nm) or blue LED chips (450–480 nm) based on GaN semiconductor. K 3 RE(VO 4 ) 2 could be suggested to be a potential candidate to give further investigations for the application on near-UV excited white LEDs. - Graphical abstract: A series of orthovanadates K 3 RE(VO 4 ) 2 (RE = Eu, Dy, Gd, Pr, La, Y) have been developed to be new phosphors with rich luminescence colors; there are efficiency excitation in the near UV wavelength region. Compared with the reported vanadate phosphors K 3 R(VO 4 ) 2 has rich luminescence color, rich color, no concentration quenching, and comparable luminescence QE. - Highlights: • A new phosphor of non-doped of K 3 R(VO 4 ) 2 (R = Eu, Dy, Gd, Pr, La, Y) were developed by solid-state reaction route. • The phosphor

  15. Gd2O3 nanoparticles in hematopoietic cells for MRI contrast enhancement

    Directory of Open Access Journals (Sweden)

    Hedlund A

    2011-12-01

    Full Text Available Anna Hedlund1,2, Maria Ahrén3, Håkan Gustafsson1,2, Natalia Abrikossova3, Marcel Warntjes2,4, Jan-Ingvar Jönsson5, Kajsa Uvdal3, Maria Engström1,21Division of Radiology, Department of Medical and Health Sciences, 2Center for Medical Image Science and Visualization, 3Division of Molecular Surface Physics and Nanoscience, Department of Physics, Chemistry, and Biology, 4Division of Clinical Physiology, Department of Medicine and Health Sciences, 5Department of Clinical and Experimental Medicine, Experimental Hematology Unit, Linköping University, Linköping, SwedenAbstract: As the utility of magnetic resonance imaging (MRI broadens, the importance of having specific and efficient contrast agents increases and in recent time there has been a huge development in the fields of molecular imaging and intracellular markers. Previous studies have shown that gadolinium oxide (Gd2O3 nanoparticles generate higher relaxivity than currently available Gd chelates: In addition, the Gd2O3 nanoparticles have promising properties for MRI cell tracking. The aim of the present work was to study cell labeling with Gd2O3 nanoparticles in hematopoietic cells and to improve techniques for monitoring hematopoietic stem cell migration by MRI. Particle uptake was studied in two cell lines: the hematopoietic progenitor cell line Ba/F3 and the monocytic cell line THP-1. Cells were incubated with Gd2O3 nanoparticles and it was investigated whether the transfection agent protamine sulfate increased the particle uptake. Treated cells were examined by electron microscopy and MRI, and analyzed for particle content by inductively coupled plasma sector field mass spectrometry. Results showed that particles were intracellular, however, sparsely in Ba/F3. The relaxation times were shortened with increasing particle concentration. Relaxivities, r1 and r2 at 1.5 T and 21°C, for Gd2O3 nanoparticles in different cell samples were 3.6–5.3 s-1 mM-1 and 9.6–17.2 s-1 mM-1

  16. Electronic States of High-k Oxides in Gate Stack Structures

    Science.gov (United States)

    Zhu, Chiyu

    In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

  17. Optical properties of Eu3+ & Tb3+ ions doped alkali oxide (Li2O/ Na2O/ K2O) modified boro phosphate glasses for red, green lasers and display device applications

    Science.gov (United States)

    Moulika, G.; Sailaja, S.; Reddy, B. Naveen Kumar; Reddy, V. Sahadeva; Dhoble, S. J.; Reddy, B. Sudhakar

    2018-04-01

    In this article we report on alkali oxide modified borophosphate glasses doped with Eu3+and Tb3+ ions, with the chemical composition of 69.5 B2O3+10P2O5 + 10CaF2 + 5 Li2O+ 5ZnO+ R+ 0.5 Eu2O3 [where R = 5 (LiO2/Na2O/K2O)] have been prepared by conventional melt quenching technique, and the spectroscopic properties of the prepared glasses have been studied by XRD, Optical absorption, excitation and emission spectral analysis. XRD spectrum of the glasses have shown the amorphous nature of the glasses. The red emission corresponding to 5D0 → 7F2 (613 nm) transition was observed under the excitation of 394 nm wavelength, corresponding to Eu3+ ions, for all the prepared glasses. For Eu3+ ion doped glasses, emission bands were observed, such as; 5D1→ 7F1 (538 nm), 5D0→ 7F0 (580 nm), 5D0→ 7F1 (592 nm), 5D0→ 7F2 (613 nm), 5D0→ 7F3 (613 nm) and 5D0→ 7F4 (702 nm) are identified. In the case of Tb3+ ion doped glasses, four emission lines were observed, such as 5D4→ (7F6, 7F5, 7F4), which are located at 489 nm, 545 nm and 585 nm, respectively, after the samples were excited with 376 nm ultraviolet source. The green emission corresponding to 5D4 → 7F5 (543 nm) transition was observed under excitation wavelength 376 nm of the Tb3+ ions for all the prepared glasses. For all these emission bands, the decay curves were recorded to evaluate the emission life times. The mechanism underlying the observed emission from the glasses was explained in terms of energy levels.

  18. Raman and FTIR spectra of CeO{sub 2} and Gd{sub 2}O{sub 3} in iron phosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Yuanming, E-mail: laiyuanming@ipm.com.cn [State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106 (China); State Key Laboratory Cultivation Base for Nonmetal Composite and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Liang, Xiaofeng; Yang, Shiyuan [State Key Laboratory Cultivation Base for Nonmetal Composite and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Liu, Pei; Zeng, Yiming; Hu, Changyi [State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106 (China)

    2014-12-25

    Highlights: • The structure of the studied samples has been investigated by Raman and FTIR spectroscopy. • The structure for the all samples has similar features. • The structure consists of predominantly Q{sup 1} with a fraction of Q{sup 0} and Q{sup 2} units. • The Ce and Gd enters in the structure of studied glasses as a network modifier. - Abstract: In the present work, multicomponent oxide samples of composition x(CeO{sub 2} + Gd{sub 2}O{sub 3})–(40 − x)Fe{sub 2}O{sub 3}–60P{sub 2}O{sub 5} (0 ⩽ x ⩽ 8 mol%) were produced by conventional melting method. The samples were investigated to examine the effect of the CeO{sub 2} and Gd{sub 2}O{sub 3} composition on the structure of the iron phosphate glasses system. The X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) for the x ⩽ 6 mol% samples show all the samples formed homogeneous glass, but for the x = 8 mol% samples show the presence of randomly distributed crystalline phase embedded in an amorphous matrix. The x(CeO{sub 2} + Gd{sub 2}O{sub 3})–(40 − x)Fe{sub 2}O{sub 3}–60P{sub 2}O{sub 5} glass containing 8 mol% CeO{sub 2} and Gd{sub 2}O{sub 3} partially crystallized during annealing and Ce/Gd-rich were identified by EDS in the crystalline phase. The structure of the studied samples has been investigated using Raman and Fourier transform infrared spectroscopy (FTIR). The Raman and FTIR spectra for the samples have analogous spectral features. The Raman and FTIR spectra suggest that the structure is mainly constituted by the pyrophosphate glass based structure, with a part proportion of metaphosphate and orthophosphate structure. Raman and FTIR spectra allowed us to identify the structural units which appear in the structural network of these phosphate glasses and also the network modifier role of cerium and gadolinium ions.

  19. Gd2O3 nanoparticles stabilized by hydrothermally modified dextrose for positive contrast magnetic resonance imaging

    Science.gov (United States)

    Babić-Stojić, Branka; Jokanović, Vukoman; Milivojević, Dušan; Požek, Miroslav; Jagličić, Zvonko; Makovec, Darko; Arsikin, Katarina; Paunović, Verica

    2016-04-01

    Gd2O3 nanoparticles of a few nm in size and their agglomerates dispersed in dextrose derived polymer template were synthesized by hydrothermal treatment. The produced nanosized material was investigated by TEM, FTIR spectroscopy, SQUID measurements and NMR relaxometry. Biological evaluation of this material was done by crystal violet and MTT assays to determine the cell viability. Longitudinal and transverse NMR relaxivities of water diluted Gd2O3 nanoparticle dispersions measured at the magnetic field of 1.5 T, estimated to be r1(Gd2O3)=9.6 s-1 mM-1 in the Gd concentration range 0.1-30 mM and r2(Gd2O3)=17.7 s-1 mM-1 in the lower concentration range 0.1-0.8 mM, are significantly higher than the corresponding relaxivities measured for the standard contrast agent r1(Gd-DTPA)=4.1 s-1 mM-1 and r2(Gd-DTPA)=5.1 s-1 mM-1. The ratio of the two relaxivities for Gd2O3 nanoparticles r2/r1=1.8 is suitable for T1-weighted imaging. Good MRI signal intensities of the water diluted Gd2O3 nanoparticle dispersions were recorded at lower Gd concentrations 0.2-0.8 mM. The Gd2O3 samples did not exert any significant cytotoxic effects at Gd concentrations of 0.2 mM and below. These properties of the produced Gd2O3 nanoparticles in hydrothermally modified dextrose make them promising for potential application in MRI for the design of a positive MRI contrast agent.

  20. Effect of structural evolution of ZnO/HfO2 nanocrystals on Eu2+/Eu3+ emission in glass-ceramic waveguides for photonic applications.

    Science.gov (United States)

    Ghosh, Subhabrata; Bhaktha B N, Shivakiran

    2018-06-01

    Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO 2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦ C, both, Eu 2+ as well as Eu 3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦ C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu 3+ to Eu 2+ takes place in such ZnO/HfO 2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 6 5d [Formula: see text] 4f 7 energy level transition of Eu 2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm -1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.

  1. Effect of structural evolution of ZnO/HfO2 nanocrystals on Eu2+/Eu3+ emission in glass-ceramic waveguides for photonic applications

    Science.gov (United States)

    Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

    2018-06-01

    Eu-doped 70SiO2–23HfO2–7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦C, both, Eu2+ as well as Eu3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu3+ to Eu2+ takes place in such ZnO/HfO2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 65d \\to 4f 7 energy level transition of Eu2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm‑1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO2–23HfO2–7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.

  2. The electrorheological properties of nano-sized SiO2 particle materials doped with rare earths

    International Nuclear Information System (INIS)

    Liu Yang; Liao Fuhui; Li Junran; Zhang Shaohua; Chen Shumei; Wei Chenguan; Gao Song

    2006-01-01

    Electrorheological (ER) materials of pure SiO 2 and SiO 2 doped with rare earths (RE = Ce, Gd, Y) (non-metallic glasses (silicates)) were prepared using Na 2 SiO 3 and RECl 3 as starting materials. The electrorheological properties are not enhanced by all rare earth additions. The material doped with Ce exhibits the best ER performance

  3. Muon spin depolarization in Gd- and EuBa2Cu3Ox

    International Nuclear Information System (INIS)

    Cooke, D.W.; Hutson, R.L.; Kwok, R.S.; Maez, M.; Rempp, H.; Schillaci, M.E.; Smith, J.L.; Willis, J.O.; Lichti, R.L.; Chan, K.C.; Boekema, C.; Weathersby, S.; Oostens, J.

    1989-01-01

    Positive muon spin rotation (μSR) measurements on Gd- and EuBa 2 Cu 3 O x (x ∼ 7) have been conducted in the temperature interval 4 - 300 K. For each sample, muons stop both at grain boundaries and within the superconducting grains. Measured magnetic field penetration depths are 1550 and 1900 Angstrom for two specimens of GdBa 2 Cu 3 O x , and 1350 Angstrom for EuBa 2 Cu 3 O x

  4. Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

    International Nuclear Information System (INIS)

    Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

    2010-01-01

    Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

  5. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    Science.gov (United States)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  6. Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

    Science.gov (United States)

    Padilha, A. C. M.; McKenna, K. P.

    2018-04-01

    Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

  7. Synthesis, structure and magnetic properties of Fe-Gd nanocapsules coated with B2O3/H3BO3 and Fe3BO5+GdBO3

    International Nuclear Information System (INIS)

    Si, P.Z.; Brueck, E.; Zhang, Z.D.; Tegus, O.; Buschow, K.H.J.; Zhang, W.S.; Klaasse, J.C.P.; Boer, F.R. de

    2004-01-01

    Nanocapsules consisting of B 2 O 3 /H 3 BO 3 encapsulating Fe-Gd cores have been synthesized by an arc-discharge process using metal-boron alloys as cathode. Most of the nanocapsules have a well-constructed shell/core structure with a uniform B 2 O 3 /H 3 BO 3 shell. Heat-treatment induces reactions between the shell and the core, resulting in the formation of a Fe 3 BO 5 +GdBO 3 matrix embedded with Fe nanoparticles, reduction of the metallic-core size and decrease of the blocking temperature T B . Above T B , the magnetization curves plotted vs. H/T overlap and show zero coercivity. Below T B , the coercivity shows a linear dependence when plotted vs. T 1/2 . However, the coercivity-T 1/2 curve below 60 K has a different slope from that above 60 K, indicating the existence of two different magnetic phases in the nanocapsules. Different from bulk Fe 3 BO 5 , nanoscale Fe 3 BO 5 particles have a lower transition temperature to the weak-ferromagnetic state, and magnetic hysteresis is absent due to size effects

  8. Enhanced critical currents in (Gd,Y)Ba2Cu3Ox superconducting tapes with high levels of Zr addition

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V; Chen, Y; Shi, T; Liu, Y; Khatri, ND; Liu, J; Yao, Y; Xiong, X; Lei, C; Soloveichik, S; Galstyan, E; Majkic, G

    2013-01-21

    The critical current and structural properties of (Gd,Y)BaCuO tapes made by metal organic chemical vapor deposition (MOCVD) with Zr addition levels up to 30 at.% have been investigated. The reduction in critical current beyond the previously optimized Zr addition level of 7.5 at.% was found to be due to structural deterioration of the (Gd,Y)Ba2Cu3Ox film. By a modified MOCVD process,enhanced critical current densities have been achieved with high levels of Zr addition,including 3.83 MA cm(-2) in 15 at.% Zr- added 1.1 mu m thick film at 77 K in zero magnetic field. Critical currents as high as 1072 A/ 12 mm have been reached in (Gd,Y) BaCuO tapes with 15 at.% Zr addition at 30 K in a field of 3 T applied perpendicular to the tape,corresponding to a pinning force value of 268 GN m(-3). The enhanced critical currents achievable with a high density of nanoscale defects by employing high levels of second- phase additions enable the performance targets needed for the use of HTS tapes in coil applications involving high magnetic fields at temperatures below 50 K to be met.

  9. Gadolinium heteropoly complex K 17[Gd(P 2W 17O 61) 2] as a potential MRI contrast agent

    Science.gov (United States)

    Sun, Guoying; Feng, Jianghua; Wu, Huifeng; Pei, Fengkui; Fang, Ke; Lei, Hao

    2004-10-01

    Gadolinium heteropoly complex K17[Gd(P2W17O61)2] has been evaluated by in vitro and in vivo experiments as a potential contrast agent for magnetic resonance imaging (MRI). The thermal analysis and conductivity study indicate that this complex has good thermal stability and wide pH stability range. The T1 relaxivity is 7.59 mM-1 s-1 in aqueous solution and 7.97 mM-1 s-1 in 0.725 mmol l-1 bovine serum albumin (BSA) solution at 25 °C and 9.39 T, respectively. MR imaging of three male Sprague-Dawley rats showed remarkable enhancement in rat liver after intravenous injection, which persisted longer than with Gd-DTPA. The signal intensity increased by 57.1±16.9% during the whole imaging period at 0.082 mmol kg-1dose. Our preliminary in vitro and in vivo studies indicate that K17[Gd(P2W17O61)2] is a potential liver-specific MRI contrast agent.

  10. Phase formation in K2O(K2CO3)-CdO-MoO3 system

    International Nuclear Information System (INIS)

    Tsirenova, G.D.; Tsybikova, B.A.; Bazarova, Zh.G.; Solodovnikov, S.F.; Zolotova, E.S.

    2000-01-01

    Phase formation in K 2 O(K 2 CO 3 )-CdO-MoO 3 system are studied by the methods of x-ray diffraction, thermal and crystal optical analyses. Three potassium-cadmium molybdates are detected: K 4 Cd(MoO 4 ) 3 with a new structure, alluodite-like K 4-2x Cd 1+x (MoO 4 ) 3 (0.26≤x≤0.38 at 470 Deg C) and K 4 CdMo 4 O 15 of K 4 MnMo 4 O 15 type. First of them decomposes in solid phase at 580 Deg C, and others melt incongruently at 720 and 515 Deg C correspondingly. It is established that K 4-2x Cd 1+x (MoO 4 ) 3 compound undergoes phase transition of the second type in the temperature interval of 500-550 Deg C. Phase diagram of quasibinary cross section K 2 MoO 4 -CdMoO 4 is plotted [ru

  11. High energy transmission of Al2O3 doped with light transition metals

    KAUST Repository

    Schuster, Cosima

    2012-01-31

    The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

  12. High energy transmission of Al2O3 doped with light transition metals

    KAUST Repository

    Schuster, Cosima; Klimke, J.; Schwingenschlö gl, Udo

    2012-01-01

    The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

  13. Piezoelectric properties and temperature stability of Mn-doped Pb(Mg1/3Nb2/3)-PbZrO3-PbTiO3 textured ceramics

    Science.gov (United States)

    Yan, Yongke; Cho, Kyung-Hoon; Priya, Shashank

    2012-03-01

    In this letter, we report the electromechanical properties of textured 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 (PMN-PZT) composition which has relatively high rhombohedral to tetragonal (R-T) transition temperature (TR-T of 160 °C) and Curie temperature (TC of 234 °C) and explore the effect of Mn-doping on this composition. It was found that MnO2-doped textured PMN-PZT ceramics with 5 vol. % BaTiO3 template (T-5BT) exhibited inferior temperature stability. The coupling factor (k31) of T-5BT ceramic started to degrade from 75 °C while the random counterpart showed a very stable tendency up to 180 °C. This degradation was associated with the "interface region" formed in the vicinity of BT template. MnO2 doped PMN-PZT ceramics textured with 3 vol. % BT and subsequently poled at 140 °C (T-3BT140) exhibited very stable and high k31 (>0.53) in a wide temperature range from room temperature to 130 °C through reduction in the interface region volume. Further, the T-3BT140 ceramic exhibited excellent hard and soft combinatory piezoelectric properties of d33 = 720 pC/N, k31 = 0.53, Qm = 403, tan δ = 0.3% which are very promising for high power and magnetoelectric applications.

  14. Functionalized multimodal ZnO@Gd{sub 2}O{sub 3} nanosystems to use as perspective contrast agent for MRI

    Energy Technology Data Exchange (ETDEWEB)

    Babayevska, Nataliya, E-mail: natbab@amu.edu.pl; Florczak, Patryk; Woźniak-Budych, Marta; Jarek, Marcin; Nowaczyk, Grzegorz; Zalewski, Tomasz; Jurga, Stefan

    2017-05-15

    Highlights: • The multimodal ZnO@Gd{sub 2}O{sub 3} nanostructures were obtained by wet chemistry methods. • FA and Dox have been effectively bonded onto the ZnO nanoparticles surface. • Functionalized ZnO@Gd{sub 2}O{sub 3} NPs are good contrast agents, useful for MR imaging. - Abstract: The main aim of this research was the synthesis of the multimodal hybrid ZnO@Gd{sub 2}O{sub 3} nanostructures as prospective contrast agent for Magnetic Resonance Imaging (MRI) for bio-medical applications. The nanoparticles surface was functionalized by organosilicon compounds (OSC) then, by folic acid (FA) as targeting agent and doxorubicin (Dox) as chemotherapeutic agent. Doxorubicin and folic acid were attached to the nanoparticles surface by amino groups as well as due to attractive physical interactions. The morphology and crystallography of the nanostructures were studied by HRTEM and SAXS techniques. After ZnO nanoparticles surface modification by Gd{sup 3+} and annealing at 900 °C, ZnO@Gd{sub 2}O{sub 3} nanostructures are polydispersed with size 30–100 nm. NMR (Nuclear Magnetic Resonance) studies of ZnO@Gd{sub 2}O{sub 3} were performed on fractionated particles with size up to 50 nm. Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, zeta-potential measurements and energy dispersive X-ray analysis (EDX) showed that functional groups have been effectively bonded onto the nanoparticles surface. The high adsorption capacity of folic acid (up to 20%) and doxorubicin (up to 40%) on nanoparticles was reached upon 15 min of adsorption process in a temperature-dependent manner. The nuclear magnetic resonance (NMR) relaxation measurements confirmed that the obtained ZnO@Gd{sub 2}O{sub 3} nanostructures could be good contrast agents, useful for magnetic resonance imaging.

  15. Improved dielectric properties and grain boundary response in neodymium-doped Y_2_/_3Cu_3Ti_4O_1_2 ceramics

    International Nuclear Information System (INIS)

    Liang, Pengfei; Yang, Zupei; Chao, Xiaolian

    2016-01-01

    Rare earth element neodymium was adopted to refine grain and in turn increase the volume of grain boundary of Y_2_/_3Cu_3Ti_4O_1_2 ceramics, which could strongly increase the resistance of grain boundary. Proper amount of Nd substitution in Y_2_/_3_−_xNd_xCu_3Ti_4O_1_2 ceramics could significantly depress the low-frequency dielectric loss. When the doping level is 0.06 and 0.09, the samples exhibited a relatively low dielectric loss (below 0.050 between 0.3 and 50 kHz) and high dielectric constant above 11000 over a wide frequency range from 40 Hz to 100 kHz. Based on the ε′-T plots, dielectric relaxation intensity was substantially weakened by Nd doping so that the temperature stability of dielectric constant was improved obviously. The correlations between low-frequency dielectric loss and the resistance of grain boundary were revealed. After Nd doping, the activation energies for the conduction behavior in grain boundaries were significantly enhanced, and the activation energies for the dielectric relaxation process in grain boundaries were slightly influenced. - Highlights: • Significant decrease in dielectric loss of Y_2_/_3_−_xNd_xCu_3Ti_4O_1_2 ceramics was realized. • The enhanced grain boundary density is responsible for the lowered dielectric loss. • Nd doping could improve the temperature stability of dielectric constant. • Oxygen vacancies contribute to conduction and relaxation process of grain boundaries.

  16. Ionic conductivity of co-doped Sc2O3-ZrO2 ceramics

    DEFF Research Database (Denmark)

    Omar, Shobit; bin Najib, Waqas; Chen, Weiwu

    2012-01-01

    The oxide ionic conductivity of Sc0.18Zr0.82O1.91 doped with 0.5 mol.% of both Yb2O3 and In2O3 is evaluated at various temperatures in air. Among various co-doped compositions, In0.02Sc0.18Zr0.80O1.90 exhibits the highest grain ionic conductivity followed by Yb0.02Sc0.18Zr0.80O1.90 at 500°C....... However, it also possesses phase transformation from c- to β-phase at 475°C on cooling. In the present work, an attempt is made to completely stabilize the cphase in In0.02Sc0.18Zr0.80O1.90 by substituting 0.5 mol.% of In2O3 with Yb2O3, which can enhance the ionic conductivity in co-doped compositions....

  17. Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system

    Science.gov (United States)

    Mazur, M.; Poniedziałek, A.; Kaczmarek, D.; Wojcieszak, D.; Domaradzki, J.; Gibson, D.

    2017-11-01

    In this work the properties of hafnium dioxide (HfO2), titanium dioxide (TiO2) and mixed HfO2-TiO2 thin films with various amount of titanium addition, deposited by magnetron sputtering were described. Structural, surface, optical and mechanical properties of deposited coatings were analyzed. Based on X-ray diffraction and Raman scattering measuremets it was observed that there was a significant influence of titanium concentration in mixed TiO2-HfO2 thin films on their microstructure. Increase of Ti content in prepared mixed oxides coatings caused, e.g. a decrease of average crystallite size and amorphisation of the coatings. As-deposited hafnia and titania thin films exhibited nanocrystalline structure of monoclinic phase and mixed anatase-rutile phase for HfO2 and TiO2 thin films, respectively. Atomic force microscopy investigations showed that the surface of deposited thin films was densely packed, crack-free and composed of visible grains. Surface roughness and the value of water contact angle decreased with the increase of Ti content in mixed oxides. Results of optical studies showed that all deposited thin films were well transparent in a visible light range. The effect of the change of material composition on the cut-off wavelength, refractive index and packing density was also investigated. Performed measurements of mechanical properties revealed that hardness and Young's elastic modulus of thin films were dependent on material composition. Hardness of thin films increased with an increase of Ti content in thin films, from 4.90 GPa to 13.7 GPa for HfO2 and TiO2, respectively. The results of the scratch resistance showed that thin films with proper material composition can be used as protective coatings in optical devices.

  18. The effect of La2O3 in Tm3+-doped germanate-tellurite glasses for ~2 μm emission

    OpenAIRE

    Peng, Ya-Pei; Yuan, Xinqiang; Zhang, Junjie; Zhang, Long

    2014-01-01

    A germanate-tellurite glass (GeO2-TeO2-K2O-Nb2O5-La2O3) with thulium doping has been investigated for application as a laser material around 2.0 μm regions. Under the 808 nm laser diode pumped, intense 1.8 μm emission is obtained. Based on the absorption spectra, radiative properties are predicted using Judd-Ofelt theory. The maximum value of emission cross-section of Tm3+ around 1.8 μm can reach 1.46 × 10−20 cm2, which indicated that the germanate-tellurite glass may provide high gain as a g...

  19. Synthesis and characterization of Gd-doped magnetite nanoparticles

    International Nuclear Information System (INIS)

    Zhang, Honghu; Malik, Vikash; Mallapragada, Surya; Akinc, Mufit

    2017-01-01

    Synthesis of magnetite nanoparticles has attracted increasing interest due to their importance in biomedical and technological applications. Tunable magnetic properties of magnetite nanoparticles to meet specific requirements will greatly expand the spectrum of applications. Tremendous efforts have been devoted to studying and controlling the size, shape and magnetic properties of magnetite nanoparticles. Here we investigate gadolinium (Gd) doping to influence the growth process as well as magnetic properties of magnetite nanocrystals via a simple co-precipitation method under mild conditions in aqueous media. Gd doping was found to affect the growth process leading to synthesis of controllable particle sizes under the conditions tested (0–10 at% Gd"3"+). Typically, undoped and 5 at% Gd-doped magnetite nanoparticles were found to have crystal sizes of about 18 and 44 nm, respectively, supported by X-ray diffraction and transmission electron microscopy. Our results showed that Gd-doped nanoparticles retained the magnetite crystal structure, with Gd"3"+ randomly incorporated in the crystal lattice, probably in the octahedral sites. The composition of 5 at% Gd-doped magnetite was Fe_(_3_−_x_)Gd_xO_4 (x=0.085±0.002), as determined by inductively coupled plasma mass spectrometry. 5 at% Gd-doped nanoparticles exhibited ferrimagnetic properties with small coercivity (~65 Oe) and slightly decreased magnetization at 260 K in contrast to the undoped, superparamagnetic magnetite nanoparticles. Templation by the bacterial biomineralization protein Mms6 did not appear to affect the growth of the Gd-doped magnetite particles synthesized by this method. - Highlights: • Gd-doped magnetite nanoparticles are synthesized via aqueous co-precipitation method under mild conditions. • Gd doping affects growth of magnetite nanoparticles leading to tunable particle size. • Gd-doped magnetite nanoparticles exhibit ferrimagnetic properties.

  20. Irradiation response of radio-frequency sputtered Al/Gd2O3/p-Si MOS capacitors

    Science.gov (United States)

    Kahraman, A.; Yilmaz, E.

    2017-10-01

    The usage of the Gadolinium oxide (Gd2O3) as sensitive region in the MOS (Metal-Oxide-Semiconductor)-based dosimeters was investigated in the presented study. The Gd2O3 films grown on p-type Si (100) by RF magnetron sputtering were annealed at 800 °C under N2 ambient. The back and front metal contacts were establishes to produce MOS capacitors. The fabricated Gd2O3 MOS capacitors were irradiated in the dose range 0.5-50 Gy by 60Co gamma source. The performed Capacitance-Voltage (C-V) curves of the Gd2O3 MOS capacitors shifted to right side relative to pre-irradiation one. While continuous increments in the oxide trapped charges with increasing in gamma dose were observed, interface trapped charges fluctuated in the studied dose range. However, the variation of the interface trapped charge densities was found in the order of 1011 cm-2 and no significant variation was observed with applied dose. These results confirm that a significant deterioration does not occur in the capacitance during the irradiation. The higher oxide trapped charges compared to interface trapped charges showed that these traps were more responsible for the shift of the C-V curves. The sensitivity and percentage fading after 105 min of the Gd2O3 MOS capacitor were found as 39.7±1.4 mV/Gy and 14.5%, respectively. The devices sensitivity was found to be higher than that of capacitors composed of Er2O3, Sm2O3, La2O3, Al2O3, and SiO2, but, the high fading values is seen as a major problem for these capacitors. Finally, the barrier height was investigated with gamma exposure and the results showed that its value increased with increasing in radiation dose due to possible presence of the acceptor-like interface states.

  1. Development on UO3-K2O and MoO3-K2O binary systems and study of UO2MoO4-MoO3 domain within UO3-MoO3-K2O ternary system

    International Nuclear Information System (INIS)

    Dion, C.; Noel, A.

    1983-01-01

    This paper confirms the previous study on the MoO 3 -K 2 O system, and constitutes a clarity of the UO 3 -K 2 O system. Four distinct uranates VI with alkaline metal/uranium ratio's 2, 1, 0,5 and 0,285 exist. Preparation conditions and powder diffraction spectra of these compounds are given. Additional informations relative to K 2 MoO 4 allotropic transformations are provided. Study of UO 2 MoO 4 -K 2 MoO 4 diagram has brought three new phases into prominence: (B) K 6 UMo 4 O 18 incongruently melting point, (E) K 2 UMo 2 O 10 congruently melting and (F) K 2 U 3 Mo 4 O 22 incongruently melting point. Within MoO 3 -K 2 MoO 4 -UO 2 MoO 4 ternary system, no new phase is found. The general appearance of ternary liquidus and crystallization fields of several compounds are given. These three new compounds become identified with these of UO 2 MoO 4 -Na 2 MoO 4 binary system [fr

  2. Investigation on compression behavior of TZM and La{sub 2}O{sub 3} doped TZM Alloys at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Ping, E-mail: huping1985@126.com [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Zhou, Yuhang; Chang, Tian; Yu, Zhitao; Wang, Kuaishe; Yang, Fan; Hu, Boliang [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Cao, Weicheng [Jinduicheng Molybdenum Co., Ltd, Xi’an 710077 (China); Yu, Hailiang [School of Mechanical, Materials, Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2500 (Australia)

    2017-02-27

    Mechanical properties of Titanium-zirconium-molybdenum (TZM) and La{sub 2}O{sub 3} doped TZM alloys under compression were tested at 1000 °C and 1200 °C. Microstructure of TZM and La{sub 2}O{sub 3} doped TZM alloys after compressing was characterized by scanning electron microscopy. The effects on La{sub 2}O{sub 3} doping on the high temperature deformation behavior and microstructure evolution of the TZM alloy were analyzed. Results show that La{sub 2}O{sub 3} doping can refine the grain size of TZM alloy. La{sub 2}O{sub 3} doping changes fracture model of TZM alloy. TZM alloy exhibits mainly intergranular fracture, while the La{sub 2}O{sub 3} doped TZM alloy exhibits both intergranular and transgranular fracture mode.

  3. Superconductivity and magnetism in the oxypnictides: high field ESR and {mu}SR studies of (La,Gd)FeAsO{sub 1-x}F{sub x} compounds

    Energy Technology Data Exchange (ETDEWEB)

    Muranyi, Ferenc [Physics Institute, University of Zuerich (Switzerland); IFW Dresden (Germany); Alfonsov, Alexey; Kataev, Vladislav; Koehler, Anke; Werner, Jochen; Behr, Guenter; Leps, Norman; Klingeler, Ruediger; Kondrat, Agnieszka; Hess, Christian; Buechner, Bernd [IFW Dresden (Germany); Khasanov, Rustem; Luetkens, Hubertus [Paul Scherrer Institut, Villigen PSI (Switzerland); Klaus, Hans-Henning [IFP, TU Dresden (Germany)

    2009-07-01

    The discovery of a new class of superconducting materials, ReFeAsO{sub 1-x}F{sub x}, stirred up the scientific community. Here we report the Gd{sup 3+} high field ESR study of differently doped (La,Gd)FeAsO{sub 1-x}F{sub x} compounds. In lightly Gd-doped LaFeAsO samples the SDW transition yields line-broadening at the transition temperature, the SDW transition is then suppressed upon F-doping. In the dense compound, GdFeAsO, with SDW transition around 140 K, the Gd-ESR was also studied. With 15% F-doping superconductivity appears at {proportional_to} 21 K. The SDW and SC transitions are clearly seen in ESR and in {mu} SR as well. Surprisingly the reminiscence of the SDW transition of the undoped material (GdFeAsO) was identified in the doped (15% F) compound at lower temperature ({proportional_to} 80 K). This indicates the importance of the the interplay between superconductivity and magnetism in oxypnictides.

  4. Optical properties and radiation response of Ce3+-doped GdScO3 crystals

    International Nuclear Information System (INIS)

    Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke; Kochurikhin, Vladimir; Yanagida, Takayuki; Yoshikawa, Akira

    2012-01-01

    10%-Ce doped GdScO 3 perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO 3 crystal showed photo- and radio-luminescence peaks due to Ce 3+ of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wellenius, Patrick; Muth, John F. [Department of Electrical and Computer Engineering, NC State University, Raleigh, NC 27606 (United States); Smith, Eric R. [Kratos Defense and Security Solutions, Inc., 5030 Bradford Dr., Huntsville, AL 35805 (United States); Wu, Pae C [Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708 (United States); Everitt, Henry O. [Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708 (United States); Army Aviation and Missile RD and E Center, Redstone Arsenal, AL 35898 (United States)

    2010-08-15

    Europium-doped gadolinium oxide (Gd{sub 2}O{sub 3}) thin films were deposited on sapphire substrates by pulsed laser deposition (PLD). The effect of oxygen pressure during deposition on the structure of the thin films, investigated by transmission electron microscopy (TEM) and X-ray diffraction (XRD), was correlated to photoluminescence spectra. The polycrystalline films, like the one deposited in 5 mTorr oxygen environment, were primarily monoclinic phase; however the rarer cubic phase was achieved at 50 mTorr pressure. Time-integrated and time-resolved photoluminescence (TIPL and TRPL) spectra of the bright {sup 5}D{sub 0} to {sup 7}F{sub 2} radiative transition revealed how the differing host material phases altered the local environment of the Eu dopants. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  6. Investigation on photoluminescence, electrical and positron lifetime of Eu"3"+ activated Gd_2O_3 phosphors

    International Nuclear Information System (INIS)

    Selvalakshmi, Thangaraj; Sellaiyan, Selvakumar; Uedono, Akira; Chandra Bose, Arumugam

    2015-01-01

    In the present study, red emitting Gd_2O_3:Eu"3"+ phosphors are prepared by citrate-based sol–gel process and the as-prepared samples are annealed at various annealing temperatures. The photoluminescence properties of Gd_2O_3:Eu"3"+ is explained from the excitation and emission spectra. The excitation spectra include peaks corresponding to charge transfer and 4f–4f transitions of Eu"3"+ and Gd"3"+. The phosphors exhibit a weak energy transfer process from Gd"3"+ to Eu"3"+. Under the excitation of 254 nm, a sharp red emission peak is observed at 611 nm and the emission intensity increases with the annealing temperature. The presence of defects in the phosphor is investigated by positron annihilation lifetime and Doppler broadening spectroscopy. The relation between visible emission and lattice defects of the phosphors is presented. The electrical and dielectric properties of the phosphor are also discussed in detail. Such red emitting phosphors pave the way towards the fabrication of light emitting diodes (LEDs). - Highlights: • Positron annihilation lifetime spectroscopy of Gd_2O_3:Eu"3"+. • Relation between positron lifetime and photoluminescence. • Conductivity and dielectric properties of Gd_2O_3:Eu"3"+.

  7. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    OpenAIRE

    Lin, Yu-Hsien; Chou, Jay-Chi

    2014-01-01

    This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

  8. Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment

    International Nuclear Information System (INIS)

    Lai, C.S.; Wu, W.C.; Chao, T.S.; Chen, J.H.; Wang, J.C.; Tay, L.-L.; Rowell, Nelson

    2006-01-01

    In this letter, the effects of pre-CF 4 plasma treatment on Si for sputtered HfO 2 gate dielectrics are investigated. The significant fluorine was incorporated at the HfO 2 /Si substrate interface for a sample with the CF 4 plasma pretreatment. The Hf silicide was suppressed and Hf-F bonding was observed for the CF 4 plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF 4 plasma treated sample due to the elimination of the interfacial layer between HfO 2 and Si substrate. These improved characteristics of the HfO 2 gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO 2 film into the Si substrate

  9. Optical spectroscopy of Sm(3+) doped Na2O-ZnO-La2O3-TeO2 glasses.

    Science.gov (United States)

    Sobczyk, Marcin

    2015-10-05

    Telluride glasses with the composition xSm2O3-(7-x)La2O3-3Na2O-25ZnO-65TeO2 (where x=0.1, 1, 2, 5 and 7 mol%) were obtained by the melt quenching technique. Electronic absorption and fluorescence spectra as well as fluorescence dynamics of the Sm(3+)-doped title glasses are presented and analysed in detail. A Judd-Ofelt intensity analysis of the absorption spectrum at 300 K has been applied for determination of Ωλ parameters (Ω2=3.10, Ω4=3.80, Ω6=1.61×10(-20) cm(2)) which in turn have been used for calculations of the radiative transition probabilities (AT), the natural (radiative) lifetimes (τR) of the (4)G5/2 level of Sm(3+), the fluorescence branching ratios (β) and the emission cross-sections (σem). The τR value of the (4)G5/2 level amount to 1546 μs and is slightly higher than the measured decay time of 1306 μs. With the increasing of Sm2O3 concentration from 0.1 to 7.0 mol% the experimental lifetime of the fluorescent level decreases from 1306 to 41 μs. An analysis of the non-radiative decay was based on the cross-relaxation mechanisms. The optical achieved results indicate that the investigated glasses are potentially applicable as an orange and/or red laser host. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Desireé M. de los, E-mail: desire.delossantos@uca.es; Navas, Javier, E-mail: javier.navas@uca.es; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

    2015-10-15

    Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.

  11. CoO-doped MgO-Al2O3-SiO2-colored transparent glass-ceramics with high crystallinity

    Science.gov (United States)

    Tang, Wufu; Zhang, Qian; Luo, Zhiwei; Yu, Jingbo; Gao, Xianglong; Li, Yunxing; Lu, Anxian

    2018-02-01

    To obtain CoO-doped MgO-Al2O3-SiO2 (MAS)-colored transparent glass-ceramics with high crystallinity, the glass with the composition 21MgO-21Al2O3-54SiO2-4B2O3-0.2CoO (in mol %) was prepared by conventional melt quenching technique and subsequently thermal treated at several temperatures. The crystallization behavior of the glass, the precipitated crystalline phases and crystallinity were analyzed by X-ray diffraction (XRD). The microstructure of the glass-ceramics was characterized by field emission scanning electron microscopy (FSEM). The transmittance of glass-ceramic was measured by UV spectrophotometer. The results show that a large amount of α-cordierite (indianite) with nano-size was precipitated from the glass matrix after treatment at 1020 °C for 3 h. The crystallinity of the transparent glass-ceramic reached up to 97%. Meanwhile, the transmittance of the glass-ceramic was 74% at 400 nm with a complex absorption band from 450 nm to 700 nm. In addition, this colored transparent glass-ceramic possessed lower density (2.469 g/cm3), lower thermal expansion coefficient (1.822 × 10-6 /℃), higher Vickers hardness (9.1 GPa) and higher bending strength (198 MPa) than parent glass.

  12. The effect of La2O3 in Tm3+-doped germanate-tellurite glasses for ~2 μm emission

    Science.gov (United States)

    Peng, Ya-Pei; Yuan, Xinqiang; Zhang, Junjie; Zhang, Long

    2014-06-01

    A germanate-tellurite glass (GeO2-TeO2-K2O-Nb2O5-La2O3) with thulium doping has been investigated for application as a laser material around 2.0 μm regions. Under the 808 nm laser diode pumped, intense 1.8 μm emission is obtained. Based on the absorption spectra, radiative properties are predicted using Judd-Ofelt theory. The maximum value of emission cross-section of Tm3+ around 1.8 μm can reach 1.46 × 10-20 cm2, which indicated that the germanate-tellurite glass may provide high gain as a good medium for efficient 1.8 μm laser system.

  13. Gd{sub 2}O{sub 3} nanoparticles stabilized by hydrothermally modified dextrose for positive contrast magnetic resonance imaging

    Energy Technology Data Exchange (ETDEWEB)

    Babić-Stojić, Branka, E-mail: babic@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Jokanović, Vukoman; Milivojević, Dušan [Vinča Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Požek, Miroslav [Department of Physics, Faculty of Science, University of Zagreb, 10000 Zagreb (Croatia); Jagličić, Zvonko [Institute of Mathematics, Physics and Mechanics, Jadranska 19, 1000 Ljubljana (Slovenia); Makovec, Darko [Department for Materials Synthesis, Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Arsikin, Katarina; Paunović, Verica [Institute of Microbiology and Immunology, School of Medicine, University of Belgrade, 11000 Belgrade (Serbia)

    2016-04-01

    Gd{sub 2}O{sub 3} nanoparticles of a few nm in size and their agglomerates dispersed in dextrose derived polymer template were synthesized by hydrothermal treatment. The produced nanosized material was investigated by TEM, FTIR spectroscopy, SQUID measurements and NMR relaxometry. Biological evaluation of this material was done by crystal violet and MTT assays to determine the cell viability. Longitudinal and transverse NMR relaxivities of water diluted Gd{sub 2}O{sub 3} nanoparticle dispersions measured at the magnetic field of 1.5 T, estimated to be r{sub 1}(Gd{sub 2}O{sub 3})=9.6 s{sup −1} mM{sup −1} in the Gd concentration range 0.1–30 mM and r{sub 2}(Gd{sub 2}O{sub 3})=17.7 s{sup −1} mM{sup −1} in the lower concentration range 0.1–0.8 mM, are significantly higher than the corresponding relaxivities measured for the standard contrast agent r{sub 1}(Gd-DTPA)=4.1 s{sup −1} mM{sup −1} and r{sub 2}(Gd-DTPA)=5.1 s{sup −1} mM{sup −1}. The ratio of the two relaxivities for Gd{sub 2}O{sub 3} nanoparticles r{sub 2}/r{sub 1}=1.8 is suitable for T{sub 1}-weighted imaging. Good MRI signal intensities of the water diluted Gd{sub 2}O{sub 3} nanoparticle dispersions were recorded at lower Gd concentrations 0.2–0.8 mM. The Gd{sub 2}O{sub 3} samples did not exert any significant cytotoxic effects at Gd concentrations of 0.2 mM and below. These properties of the produced Gd{sub 2}O{sub 3} nanoparticles in hydrothermally modified dextrose make them promising for potential application in MRI for the design of a positive MRI contrast agent. - Highlights: • Gd{sub 2}O{sub 3} nanoparticles (NPs) were stabilized by hydrothermally modified dextrose. • Magnetic moment per Gd{sup 3+} ion in the Gd{sub 2}O{sub 3} NPs is much lower than that in the bulk. • The ratio r{sub 2}/r{sub 1}=1.8 for Gd{sub 2}O{sub 3} NPs dispersions is favorable for T{sub 1}-weighted MRI. • Gd{sub 2}O{sub 3} NPs dispersions had good MRI signal intensity just at lower Gd concentrations

  14. Chemical pressure induced change in multiferroicity of Bi{sub 1+2x}Gd{sub 2x/2}Fe{sub 1−2x}O{sub 3} bulk ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, S.K. [Institute of Materials Science, Bhubaneswar 751013 Odisha (India); Center for Materials Research, Norfolk State University, Norfolk (United States); Sahu, D.R., E-mail: diptirs@yahoo.com [Institute of Materials Science, Bhubaneswar 751013 Odisha (India); Department of Natural and Applied Science, Namibia University of Science and Technology, Windhoek (Namibia); Rout, P.P.; Das, S.K. [Institute of Materials Science, Bhubaneswar 751013 Odisha (India); Pradhan, A.K. [Center for Materials Research, Norfolk State University, Norfolk (United States); Srinivasu, V.V. [Department of Physics, University of South Africa (South Africa); Roul, B.K., E-mail: ims@iopb.res.in [Institute of Materials Science, Bhubaneswar 751013 Odisha (India)

    2017-04-01

    We have optimized Gd ion substitution in BiFeO{sub 3} (BFO) and observed prominently change in structural, electrical and magnetic behavior of Bi{sub 1+2x}Gd{sub 2x/2}Fe{sub 1−2x}O{sub 3} ceramics synthesized through slow step sintering schedule. It is observed that with the increase in concentration of Gd (x=0.1), original structure of BFO is transformed from rhombohedral R3c space group to orthorhombic Pn21a space group. Surprisingly, unit cell volume is drastically contracted (35% for x=0.2) and the sintered specimen showed enhanced room temperature ferromagnetic behavior although the original BFO is normally G-type antiferromagnetic in nature at 643 K. It is expected that intrinsic chemical pressure within the bulk body built by the substitution of Gd in presence of excess bismuth greatly supported through unidirectional movement of electrical dipole moment with in each individual domain as a result of which suppression of leakage current with enhanced dielectric and ferroelectric hysteresis is observed.

  15. Hydrothermal synthesis of Gd{sub 2}O{sub 3}:Eu{sup 3+} nanophosphors: Effect of surfactant on structural and luminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Dhananjaya, N., E-mail: dhanu.siri@yahoo.co.in [B.S. Narayan Centre of Excellence for Advanced Materials, B.M.S. Institute of Technology, Bangalore 560 064 (India); Department of Physics, B.M.S. Institute of Technology, Bangalore 560 064 (India); Nagabhushana, H., E-mail: bhushanvlc@gmail.com [Prof. C.N.R. Rao Centre for Advanced Materials, Tumkur University, Tumkur 572 103 (India); Sharma, S.C. [B.S. Narayan Centre of Excellence for Advanced Materials, B.M.S. Institute of Technology, Bangalore 560 064 (India); Department of Mechanical Engineering, B.M.S. Institute of Technology, Bangalore 560 064 (India); Rudraswamy, B. [Department of Physics, J.B. Campus, Bangalore University, Bangalore 560 056 (India); Shivakumara, C. [Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012 (India); Nagabhushana, B.M. [Department of Chemistry, M.S. Ramaiah Institute of Technology, Bangalore 560 054 (India)

    2014-02-25

    Highlights: • Gd(OH){sub 3}:Eu{sup 3+}, GdOOH:Eu{sup 3+} and Gd{sub 2}O{sub 3}:Eu{sup 3+} phases were prepared by hydrothermal method. • Phosphors were well characterized by XRD, SEM, TEM, Raman, UV–Vis, FT-IR. • Cubic Gd{sub 2}O{sub 3}:Eu{sup 3+} show intense red emission, which was highly useful for photonics application. • HDA surfactant plays an important role in conversion of cubic to hexagonal phases. -- Abstract: Various morphologies of Eu{sup 3+} activated gadolinium oxide have been prepared by hydrothermal method using hexadecylamine (HDA) as surfactant at different experimental conditions. The powder X-ray diffraction studies reveal as-formed product is hexagonal Gd(OH){sub 3}:Eu{sup 3+} phase and subsequent heat treatment at 350 and 600 °C transforms to monoclinic GdOOH:Eu{sup 3+} and cubic Gd{sub 2}O{sub 3}:Eu{sup 3+} phases respectively. SEM pictures of without surfactant show irregular shaped rods along with flakes. However, in the presence of HDA surfactant, the particles are converted into rods of various sizes. The temperature dependent morphological evolution of Gd{sub 2}O{sub 3}:Eu{sup 3+} without and with HDA surfactant is studied. TEM micrographs of Gd(OH){sub 3}:Eu{sup 3+} sample with HDA confirms smooth nanorods with various diameters in the range 20–100 nm. FTIR studies reveal that HDA surfactant plays an important role in conversion of cubic to hexagonal phases. Among these three phases, cubic phase Gd{sub 2}O{sub 3}:Eu{sup 3+} (λ{sub ex} = 254 nm) show red emission at 612 nm corresponding to {sup 5}D{sub 0} → {sup 7}F{sub 2} and is more efficient host than the monoclinic counterpart. The band gap for hexagonal Gd(OH){sub 3}:Eu{sup 3+} is more when compared to monoclinic GdOOH:Eu{sup 3+} and cubic Gd{sub 2}O{sub 3}:Eu{sup 3+}.

  16. Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

    KAUST Repository

    Chand, Umesh

    2017-08-05

    We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

  17. Phase relations and linear thermal expansion of cubic solid solutions in the Th1-xMxO2-x/2 (M=Eu, Gd, Dy) systems

    International Nuclear Information System (INIS)

    Mathews, M.D.; Ambekar, B.R.; Tyagi, A.K.

    2005-01-01

    Cell parameters and linear thermal expansion studies of the Th-M oxide systems with general compositions Th 1-x M x O 2-x/2 (M=Eu 3+ , Gd 3+ and Dy 3+ , 0.0= 1.5 in the ThO 2 lattice. The upper solid solubility limits of EuO 1.5 , GdO 1.5 and DyO 1.5 in the ThO 2 lattice under conditions of slow cooling from 1673K are represented as Th 0.50 Eu 0.50 O 1.75 , Th 0.60 Gd 0.40 O 1.80 and Th 0.85 Dy 0.15 O 1.925 , respectively. The linear thermal expansion (293-1123K) of MO 1.5 and their single-phase solid solutions with thoria were investigated by dilatometery. The average linear thermal expansion coefficients (α-bar ) of the compounds decrease on going from EuO 1.5 to DyO 1.5 . The values of α-bar for EuO 1.5 , GdO 1.5 and DyO 1.5 containing solid solutions showed a downward trend as a function of the dopant concentration. The linear thermal expansion (293-1473K) of the solid solutions investigated by high-temperature XRD also showed a similar trend

  18. Effect of thermal annealing on scintillation properties of Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12} under different atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chao; Ding, Dongzhou; Wu, Yuntao; Li, Huanying; Chen, Xiaofeng; Shi, Jian; Wang, Qingqing; Ye, Le; Ren, Guohao [Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai (China)

    2017-05-15

    Cerium-doped 1% Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12}(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O{sub 2} and N{sub 2} atmospheres from 350 to 1400 C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on ''as-grown'' and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O{sub 2} was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O{sub 2} containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77-650 K were found to be related to oxygen vacancies. (orig.)

  19. The Structural Evolution of (Gd, Y)Ba2Cu3Ox Tapes With Zr Addition Made by Metal Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lei, CH; Galstyan, E; Chen, YM; Shi, T; Liu, YH; Khatri, N; Liu, JF; Xiong, XM; Majkic, G; Selvamanickam, V

    2013-06-01

    Structural analysis of (Gd, Y) Ba2Cu3Ox tapes with Zr addition made by metal organic chemical vapor deposition has been conducted with transmission electron microscopy and X-ray diffraction. Zr content in the films was varied from 0 to 25% in the precursor. In all Zr-doped films, self-assembled nanocolumnar structures of BaZrO3 (BZO) were observed along the c-axis. The amount of BaZrO3 was found to increase steadily with Zr content. Additionally, planar BZO plates were found on the (001) plane of (Gd, Y) Ba2Cu3Ox film. The size and thickness of BZO plates were seen to increase with Zr doping level. Rare-earth copper oxide phases were observed to begin to emerge in the 20% Zr-doped film. Cross-sectional study of the interface between (Gd, Y)Ba2Cu3Ox and LaMnO3 cap layer revealed a thin discrete BZO layer on the LaMnO3 in the 20% Zr doped film.

  20. Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)

    Science.gov (United States)

    Soares, G. V.; Feijó, T. O.; Baumvol, I. J. R.; Aguzzoli, C.; Krug, C.; Radtke, C.

    2014-01-01

    In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate interface region (at 300 °C) and through the whole HfO2 layer (400-600 °C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO2 films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.

  1. 1887 nm lasing in Tm3+-doped TeO2-BaF2-Y2O3 glass microstructured fibers

    Science.gov (United States)

    Wang, Shunbin; Yao, Chuanfei; Jia, Zhixu; Qin, Guanshi; Qin, Weiping

    2017-04-01

    In this paper, we demonstrate ∼2 μm lasing in Tm3+-doped fluorotellurite microstructured fibers. The Tm3+-doped fibers are based on TeO2-BaF2-Y2O3 glasses and fabricated by using a rod-in-tube method. Under the pump of a 1570 nm Er3+-doped fiber laser, lasing at 1887 nm is obtained in a ∼42.5 cm long Tm3+-doped fiber with a threshold pump power of 94 mW. As the pump power increases to 780 mW, the obtained maximum unsaturated power reaches up to ∼408 mW with a slop efficiency of ∼58.1%. This result indicates that the Tm3+-doped fluorotellurite fibers are promising gain media for ∼2 μm fiber lasers.

  2. Thermal, defects, mechanical and spectral properties of Nd-doped GdNbO{sub 4} laser crystal

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Shoujun [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Zhang, Qingli; Luo, Jianqiao; Liu, Wenpeng; Wang, Xiaofei; Sun, Guihua; Li, Xiuli; Sun, Dunlu [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China)

    2017-05-15

    A Nd-doped GdNbO{sub 4} crystal was grown successfully by Czochralski method. Its monoclinic structure was determined by X-ray diffraction; the unit-cell parameters are a = 5.38 Aa, b = 11.09 Aa, c = 5.11 Aa, and β = 94.56 . The morphological defects of Nd:GdNbO{sub 4} crystal were investigated using the chemical etching with the phosphoric acid etchant. For a new crystal, the physical properties are of great importance. The hardness and density of Nd:GdNbO{sub 4} were investigated first. Thermal properties of Nd:GdNbO{sub 4}, including thermal expansion coefficient and specific heat, were measured along a-, b-, and c-crystalline axes. Thermal properties indicate that the Nd:GdNbO{sub 4} pumped along c-axis can reduce the thermal lensing effect effectively. The specific heat is 0.53 J g{sup -1} K{sup -1} at 300 K, indicating a relatively high damage threshold of Nd:GdNbO{sub 4}. The transmission and emission spectrum of Nd:GdNbO{sub 4} were measured, and the absorption peaks were assigned. The strongest emission peak of Nd:GdNbO{sub 4} is located at 1065.3 nm in the spectral range of 850-1420 nm excited by 808 nm laser. The refractive index of Nd:GdNbO{sub 4} was calculated with the transmission spectrum and fitted with Sellmeier equation. All these obtained results is of great significance for the further research of Nd:GdNbO{sub 4}. (orig.)

  3. Preparation and spectral analysis of a new Tb3+-doped CaO-MgO-SiO2 glass ceramics

    International Nuclear Information System (INIS)

    Cheng Jinshu; Tian Peijing; Zheng Weihong; Xie Jun; Chen Zhenxia

    2009-01-01

    Tb 3+ -doped CaO-MgO-SiO 2 glass ceramics have been prepared and characterized. The structure and optical properties of the glass ceramics were studied by XRD, SEM, Raman, and fluorescence spectra. The precipitated crystalline phase in the glass ceramics was columnar CaMgSi 2 O 6 . Raman spectra showed the introduction of rare earth nearly had no influence on the sample structure. Fluorescence measurements showed that Tb 3+ ions entered into the diopside crystalline phase and induced a much stronger emission in the glass ceramics than that in the corresponding glass. With increase of Tb 3+ content and the introduction of Gd 3+ , the fluorescence intensity of the luminescent glass ceramic increased

  4. Production, characterization and application of Gd2O3 and Er2O3 nanoparticles as radiosensitizers in radiotherapy beams

    International Nuclear Information System (INIS)

    Corrêa, Eduardo de Lima

    2017-01-01

    In this study Gd 2 O 3 and Er 2 O 3 nanoparticles were produced for application as radiosensitizers in radiotherapy beams. They were synthesized at the Hyperfine Interactions Laboratory, IPEN, using thermal decomposition method and characterized by X-ray diffraction, to verify crystalline structure, transmission electron microscopy, to obtain information about shape, size and size distribution, neutron activation analysis, whereby it was possible to determine samples purity and gadolinium and erbium concentration. Magnetization and perturbed γ-γ angular correlation (PAC) measurements were performed in order to study particles magnetic behavior and quadrupole interactions, respectively. Characterization results showed a bixbyite structure, 5 nm diameter post-synthesis particles with narrow size distribution. Rare-earth mass determination in each sample was important to perform normalization in magnetic susceptibility measurements, making possible the view of a high magnetization under 30 K for post-synthesis samples, what was not observed in larger particles, together with an effective magnetic moment enhancement for nanoparticles, not seen in bulk samples, and a change in the antiferromagnetic ordering temperature for Er 2 O 3 . PAC spectroscopy results show possible surface effects. The absence of a well-defined frequency in 5 nm samples indicates the amount of 111 In( 111 Cd) at particle surface is bigger than in the core, resulting in a non-evident hyperfine interaction between the probe nuclei and the host. The X-ray diffraction and PAC spectroscopy joint was vital to understand the particles structural damage caused by 60 Co irradiation. About radiosensitizer measurements a dose enhancement factor (DEF) of up to 1,67 and 1,09 for Gd 2 O 3 nanoparticles under 60 Co and 6MV irradiation, respectively, were observed. Under same conditions DEF values of up to 1,37 and 1,06 were found for Er 2 O 3 samples. Results reached in this study provide not only important

  5. Two-dimensional TiO{sub 2}-based nanosheets co-modified by surface-enriched carbon dots and Gd{sub 2}O{sub 3} nanoparticles for efficient visible-light-driven photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Dingze, E-mail: 1005116870@qq.com [Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072 (China); Fang, Pengfei, E-mail: fangpf@whu.edu.cn [Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072 (China); Ding, Junqian, E-mail: 630736958@qq.com [Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072 (China); Yang, Minchen, E-mail: 1023635028@qq.com [Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072 (China); Cao, Yufei, E-mail: 344541464@qq.com [Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072 (China); Zhou, Yawei, E-mail: 769107311@qq.com [Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072 (China); Peng, Kui, E-mail: 758007737@qq.com [Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072 (China); Kondamareddy, Kiran Kumar, E-mail: kokila_kkk@yahoo.co.in [Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072 (China); Liu, Min, E-mail: liumhb@126.com [State Grid Zhejiang Electric Power Research Institute, Hangzhou, Zhejiang 310007 (China)

    2017-02-28

    Highlights: • Gd-C-TNSs with high stability and recycle usability were prepared by two-pot method. • Gd{sub 2}O{sub 3} loading results in the structure changes of TNSs and increase of the Ti{sup 3+} ions. • Modified CDs leads to obvious increase of optical absorption ability and red shift. • Appropriate amount of Gd{sub 2}O{sub 3} nanoparticles and CDs improve the separation of charges. • Gd-C-TNSs exhibit excellent synergistic photocatalytic activity for Cr(VI) and RhB. - Abstract: Two-dimensional TiO{sub 2}-based nanosheets (TNSs) co-modified by surface-enriched carbon dots (CDs) and Gd{sub 2}O{sub 3} nanoparticles: (Gd-C-TNSs), capable of exhibiting visible-light-driven photo catalysis were synthesized using a two-pot hydrothermal route. The samples had a sheet-like structure, thickness of approximately 3.6 nm, large specific surface area of 240–350 cm{sup 2}/g. The CDs (23 nm) and Gd{sub 2}O{sub 3} nanoparticles (1–2 nm) were highly dispersed over the surface of the nanosheets. The co-modification by Gd{sub 2}O{sub 3} nanoparticles and CDs influenced the crystallinity, crystal structure, and surface area of the TNSs, and improved the visible-light absorption. Surface photocurrent and fluorescence spectral studies revealed that the photo-generated charge carrier separation efficiency could be improved by an appropriate amount of modification. A very high efficiency was obtained using 0.5 at% Gd/Ti and 3.0 g/L of CDs. The visible-light-induced photocatalytic activity is enhanced under the isolated Cr(VI) system, isolated Rhodamin B (RhB) system, and the synergism between RhB degradation and Cr(VI) reduction for the Gd-C-TNSs photocatalysts. Initially, the photocatalytic activity gradually increased with an increase in the amount of CDs, and then decreased after attaining a maximum, in the case where 0.5 at% Gd/Ti and 3.0 g/L of CDs were used. The enhancement in the photocatalytic activity was attributed to the synergetic effect of the Gd{sub 2}O

  6. Fabrication and Characterization of Micro- and Nano- Gd2O3 Dispersed HDPE/EPM Composites

    International Nuclear Information System (INIS)

    Uhm, Young Rang; Kim, Jae Woo; Jun, Ji Heon; Lee, Sol; Rhee, Chang Kyu

    2010-01-01

    Hydrophobic polymer mixed with Gd 2 O 3 can be used in nuclear industry as a neutron shield because of its neutron attenuating and absorbing property, while it was reported that the smaller particles dispersed polymer composites can enhance radiation shielding efficiency compared to larger particles dispersed ones. However, preparations of such materials are difficult because of the poor dispersion of the fine particles in the polymer matrix. Surface modification of the nanoparticles is therefore required for the homogeneous dispersion of the particles in the polymer matrix. In this study, pulverization of the micro-Gd 2 O 3 particles and simultaneous surface coating of the nanoparticles by polymeric surfactant low density polyethylene (LDPE) were performed by using one-step of high energy wet ball-mill. Dispersion and neutron shielding effect of the nano- and micro-Gd 2 O 3 fillers in mixed polymer of ethylene propylene monomer (EPM) and high density polyethylene (HDPE) were examined

  7. Synthesis of nanocrystalline Gd{sub 2}O{sub 2}NCN from a versatile single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Ionescu, Emanuel; Wiehl, Leonore; Mera, Gabriela; Riedel, Ralf [Fachbereich Material- und Geowissenschaften, Technische Universitaet Darmstadt (Germany); Li, Wenjie [Fachbereich Material- und Geowissenschaften, Technische Universitaet Darmstadt (Germany); Center for Energy Harvesting Materials and Systems, Mechanical Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, VA (United States)

    2017-11-17

    Nanocrystalline Gd{sub 2}O{sub 2}NCN (P anti 3m1, crystallite size 30-40 nm) was synthesized upon ammonolysis of bis[[(N-carboxymethyl,N-carboxy-κO-methyl)amino-κN-ethyl]-glycinato( 3-)-κN,κO]gadolinium(III) (diethylenetriamine pentaacetic acid gadolinium(III) dihydrogen salt or gadopentetic acid, Gd-H{sub 2}DTPA hereafter) at 900 C. The conversion of Gd-H{sub 2}DTPA into Gd{sub 2}O{sub 2}NCN takes place in several steps, probably via transient formation of iminodiacetate-, glycinate-, and carbamate-containing complexes of Gd. Thermal treatment in air of Gd-H{sub 2}DTPA at 750 and 1300 C delivers nanocrystalline bixbyite-type Gd{sub 2}O{sub 3} (Ia anti 3, crystallite size 30-70 nm); in an argon or nitrogen atmosphere the formation of monoclinic Gd{sub 2}O{sub 3} (C2/m) was observed at 1300 C. The synthesized Gd{sub 2}O{sub 2}NCN converts upon thermal treatment in air, nitrogen, or argon atmosphere into monoclinic Gd{sub 2}O{sub 3} (C2/m). In ammonia atmosphere, Gd{sub 2}O{sub 2}NCN seems to be stable against decomposition, even upon prolonged exposure to 1000 C. This study indicates that Gd-H{sub 2}DTPA may be a robust, low-cost, and flexible precursor for nanoscaled Gd-based nanopowders. Moreover, precursor approaches based on metal complexes using H{sub 5}DTPA as a ligand are suggested as promising access pathways towards nanocrystalline materials in the M/O/C/N system. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Sensitivity improvement of Cerenkov luminescence endoscope with terbium doped Gd{sub 2}O{sub 2}S nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Xin; Chen, Xueli, E-mail: xlchen@xidian.edu.cn, E-mail: jimleung@mail.xidian.edu.cn; Cao, Xu; Zhan, Yonghua; Liang, Jimin, E-mail: xlchen@xidian.edu.cn, E-mail: jimleung@mail.xidian.edu.cn [Engineering Research Center of Molecular and Neuro Imaging of the Ministry of Education and School of Life Science and Technology, Xidian University, Xi' an, Shaanxi 710071 (China); Kang, Fei; Wang, Jing [Department of Nuclear Medicine, Xijing Hospital, Fourth Military Medical University, Xi' an, Shaanxi 710032 (China); Wu, Kaichun [Department of Digestive Diseases, Xijing Hospital, Fourth Military Medical University, Xi' an, Shaanxi 710032 (China)

    2015-05-25

    Our previous study showed a great attenuation for the Cerenkov luminescence endoscope (CLE), resulting in relatively low detection sensitivity of radiotracers. Here, a kind of radioluminescence nanoparticles (RLNPs), terbium doped Gd{sub 2}O{sub 2}S was mixed with the radionuclide {sup 68}Ga to enhance the intensity of emitted luminescence, which finally improved the detection sensitivity of the CLE by using the radioluminescence imaging technique. With the in vitro and in vivo pseudotumor experiments, we showed that the use of RLNPs mixed with the radionuclide {sup 68}Ga enabled superior sensitivity compared with the radionuclide {sup 68}Ga only, with 50-fold improvement on detection sensitivity, which guaranteed meeting the demands of the clinical diagnosis of gastrointestinal tract tumors.

  9. Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

    Science.gov (United States)

    K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

    2011-01-01

    Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

  10. Chemical and Electrochemical Asymmetric Dihydroxylation of Olefins in I(2)-K(2)CO(3)-K(2)OsO(2)(OH)(4) and I(2)-K(3)PO(4)/K(2)HPO(4)-K(2)OsO(2)(OH)(4) Systems with Sharpless' Ligand.

    Science.gov (United States)

    Torii, Sigeru; Liu, Ping; Bhuvaneswari, Narayanaswamy; Amatore, Christian; Jutand, Anny

    1996-05-03

    Iodine-assisted chemical and electrochemical asymmetric dihydroxylation of various olefins in I(2)-K(2)CO(3)-K(2)OsO(2)(OH)(4) and I(2)-K(3)PO(4)/K(2)HPO(4)-K(2)OsO(2)(OH)(4) systems with Sharpless' ligand provided the optically active glycols in excellent isolated yields and high enantiomeric excesses. Iodine (I(2)) was used stoichiometrically for the chemical dihydroxylation, and good results were obtained with nonconjugated olefins in contrast to the case of potassium ferricyanide as a co-oxidant. The potentiality of I(2) as a co-oxidant under stoichiometric conditions has been proven to be effective as an oxidizing mediator in electrolysis systems. Iodine-assisted asymmetric electro-dihydroxylation of olefins in either a t-BuOH/H(2)O(1/1)-K(2)CO(3)/(DHQD)(2)PHAL-(Pt) or t-BuOH/H(2)O(1/1)-K(3)PO(4)/K(2)HPO(4)/(DHQD)(2)PHAL-(Pt) system in the presence of potassium osmate in an undivided cell was investigated in detail. Irrespective of the substitution pattern, all the olefins afforded the diols in high yields and excellent enantiomeric excesses. A plausible mechanism is discussed on the basis of cyclic voltammograms as well as experimental observations.

  11. Gd2O3:Eu3+/PPO/POPOP/PS composites for digital imaging radiation detectors

    International Nuclear Information System (INIS)

    Oliveira, J.; Correia, V.; Martins, P.M.; Martins, P.; Lanceros-Mendez, S.; Rocha, J.G.

    2015-01-01

    Polymer-based scintillator composites have been produced by combining polystyrene (PS) and Gd 2 O 3 :Eu 3+ scintillator nanoparticles. Polystyrene has been used since it is a flexible and stable binder matrix, resistant to thermal and light deterioration and with suitable optical properties. Gd 2 O 3 :Eu 3+ has been selected as scintillator material due to its wide band gap, high density and visible light yield. The optical, thermal and electrical characteristics of the composites were studied as a function of filler content, together with their performance as scintillator material. Additionally 1 wt.% of 2,5-diphenyloxazole (PPO) and 0.01 wt.% of 1,4 di[2-(5phenyloxazolyl)]benzene (POPOP) were introduced in the polymer matrix in order to strongly improve light yield, i.e., the measured intensity of the output visible radiation, under X-ray irradiation. Increasing scintillator filler concentration (from 0.25 to 7.5 wt.%) increases scintillator light yield and decreases the optical transparency of the composite. The addition of PPO and POPOP strongly increased the overall transduction performance of the composite due to specific absorption and re-emission processes. It is thus shown that Gd 2 O 3 :Eu 3+ /PPO/POPOP/PS composites with 0.25 wt.% of scintillator content with fluorescence molecules are suitable for the development of innovative large-area X-ray radiation detectors with huge demand from the industries. (orig.)

  12. Phase equilibria in the MgMoO4-Ln2(MoO4)3 (Ln=La,Gd) systems

    International Nuclear Information System (INIS)

    Fedorov, N.F.; Ipatov, V.V.; Kvyatkovskij, O.V.

    1980-01-01

    Phase equilibria in the MgMoO 4 -Ln 2 (MoO 4 ) 3 systems (Ln=La, Gd) have been studied by static and dynamic methods of the physico-chemical analysis, using differential thermal, visual-polythermal, crystal-optical, X-ray phase, and infrared spectroscopic methods, and their phase diagrams have been constructed. Phase equilibria in the systems studied are characterized by limited solubility of components in the liquid state, formation of solid solutions on the base of α- and β-forms of Gd 2 (MoO 4 ) 3 . Eutectics in the MgMoO 4 -Ln 2 (MoO 4 ) 3 (Ln=La, Gd) systems corresponds to the composition of 71 mode % La 2 (MoO 4 ) 3 -29 mole % MgMoO 4 , tsub(melt)--935+-5 deg C and 57 mole % Gd 2 (MoO 4 ) 3 -43 mole % MgMoO 4 , tsub(melt)=1020+-5 deg C. The region of glass formation has been established [ru

  13. Structural and superconducting properties of (Y,Gd)Ba2Cu3O7-δ grown by MOCVD on samarium zirconate buffered IBAD-MgO

    International Nuclear Information System (INIS)

    Stan, L; Holesinger, T G; Maiorov, B; Feldmann, D M; Usov, I O; DePaula, R F; Civale, L; Foltyn, S R; Jia, Q X; Chen, Y; Selvamanickam, V

    2008-01-01

    Textured samarium zirconate (SZO) films have been grown by reactive cosputtering directly on an ion beam assisted deposited (IBAD) MgO template, without an intermediate homoepitaxial MgO layer. The subsequent growth of 0.9 μm thick (Y,Gd)Ba 2 Cu 3 O 7-δ ((Y, Gd)BCO) films by metal organic chemical vapor deposition (MOCVD) yielded well textured films with a full width at half maximum of 1.9 0 and 3.4 0 for the out-of-plane and in-plane texture, respectively. Microstructural characterizations of the SZO buffered samples revealed clean interfaces. This indicates that the SZO not only provides a diffusion barrier, but also functions as a buffer for (Y, Gd)BCO grown by MOCVD. The achievement of self-field critical current densities (J c ) of over 2 MA cm -2 at 75.5 K is another proof of the effectiveness of SZO as a buffer on the IBAD-MgO template. The in-field measurements revealed an asymmetric angular dependence of J c and a shift of the ab-plane maxima due to the tilted nature of the template and (Y,Gd) 2 O 3 particles existing in the (Y, Gd)BCO matrix. The present results are especially important because they demonstrate that high temperature superconducting coated conductors with simpler architecture can be fabricated using commercially viable processes

  14. Phase equilibria and crystal chemistry of the CaO-½Gd2O3-CoOz system at 885 °C in air

    Science.gov (United States)

    Wong-Ng, W.; Laws, W.; Lapidus, S. H.; Ribaud, L.; Kaduk, J. A.

    2017-10-01

    The CaO-½Gd2O3-CoOz system prepared at 885 °C in air consists of two thermoelectric calcium cobaltate compounds, namely, the 2D thermoelectric oxide solid solution, (Ca3-xGdx)Co4O9-z (0 ≤ x ≤ 0.42) which has a misfit layered structure, and the 1D Ca3Co2O6 compound which consists of chains of alternating CoO6 trigonal prisms and CoO6 octahedra. Ca3Co2O6 was found to be a point compound. In the peripheral binary systems, Gd was not present in the Ca site of CaO, while a small solid solution region was identified for (Gd1-xCax)O(3-z)/2 (0 ≤ x ≤ 0.075). A solid solution region of distorted perovskite, (Gd1-xCax)CoO3-z (0 ≤ x ≤ 0.24, space group Pnma) was established. The structure of a member of the solid solution, (Gd0.92Ca0.08)CoO3-z, was determined using high resolution synchrotron radiation. A ternary oxide compound CaGdCoO4-z which has an orthorhombic structure (Bmab) was found to be stable at this temperature. Five solid solution tie-line regions and six three-phase regions were determined in the CaO-½Gd2O3-CoOz system. A comparison of the phase diagrams of the CaO-½R2O3-CoOz (R = La, Sm and Gd) systems is provided.

  15. Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

    International Nuclear Information System (INIS)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-01-01

    SnO 2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO 2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO 2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO 2 , were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO 2 single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO 2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system

  16. Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

    Science.gov (United States)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-02-01

    SnO2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO2, were investigated. The particle size (1.8-16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO2 single-phase structure for samples annealed at 1073-1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  17. Effective lattice stabilization of gadolinium aluminate garnet (GdAG via Lu3+ doping and development of highly efficient (Gd,LuAG:Eu3+ red phosphors

    Directory of Open Access Journals (Sweden)

    Jinkai Li, Ji-Guang Li, Zhongjie Zhang, Xiaoli Wu, Shaohong Liu, Xiaodong Li, Xudong Sun and Yoshio Sakka

    2012-01-01

    Full Text Available The metastable garnet lattice of Gd3Al5O12 is stabilized by doping with smaller Lu3+, which then allows an effective incorporation of larger Eu3+ activators. The [(Gd1−xLux1−yEuy]3Al5O12 (x = 0.1–0.5, y = 0.01–0.09 garnet solid solutions, calcined from their precursors synthesized via carbonate coprecipitation, exhibit strong luminescence at 591 nm (the 5D0 → 7F1 magnetic dipole transition of Eu3+ upon UV excitation into the charge transfer band (CTB at ~239 nm, with CIE chromaticity coordinates of x = 0.620 and y = 0.380 (orange-red. The quenching concentration of Eu3+ was estimated at ~5 at.% (y = 0.05, and the quenching was attributed to exchange interactions. Partial replacement of Gd3+ with Lu3+ up to 50 at.% (x = 0.5 while keeping Eu3+ at the optimal content of 5 at.% does not significantly alter the peak positions of the CTB and 5D0 → 7F1 emission bands but slightly weakens both bands owing to the higher electronegativity of Lu3+. The effects of processing temperature (1000–1500 °C and Lu/Eu contents on the intensity, quantum efficiency, lifetime and asymmetry factor of luminescence were thoroughly investigated. The [(Gd0.7Lu0.30.95Eu0.05]3Al5O12 phosphor processed at 1500 °C exhibits a high internal quantum efficiency of ~83.2% under 239 nm excitation, which, in combination with the high theoretical density, favors its use as a new type of photoluminescent and scintillation material.

  18. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

    International Nuclear Information System (INIS)

    Vexler, M. I.; Grekhov, I. V.

    2016-01-01

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  19. The effect of La2O3 in Tm3+-doped germanate-tellurite glasses for ~2 μm emission

    Science.gov (United States)

    Peng, Ya-Pei; Yuan, Xinqiang; Zhang, Junjie; Zhang, Long

    2014-01-01

    A germanate-tellurite glass (GeO2-TeO2-K2O-Nb2O5-La2O3) with thulium doping has been investigated for application as a laser material around 2.0 μm regions. Under the 808 nm laser diode pumped, intense 1.8 μm emission is obtained. Based on the absorption spectra, radiative properties are predicted using Judd-Ofelt theory. The maximum value of emission cross-section of Tm3+ around 1.8 μm can reach 1.46 × 10−20 cm2, which indicated that the germanate-tellurite glass may provide high gain as a good medium for efficient 1.8 μm laser system. PMID:24918516

  20. Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

    International Nuclear Information System (INIS)

    Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

    2011-01-01

    Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

  1. Qualification of power determination and in-pile measurements in the UO{sub 2} Gd{sub 2} 0{sub 2} fuel irradiation test IFA 636

    Energy Technology Data Exchange (ETDEWEB)

    Tverberg, T.; Volkov, B.; Kim, J-C.

    2004-04-15

    IFA-S36 is irradiated with the main objective of extending the database on the performance of UO{sub 2}Gd{sub 2}O{sub 2} fuel (with 8% absorbing gadolinia isotopes) compared with commercial UO{sub 2}. The rig carries 6 rods in the lower cluster (including three Gd-doped fuel rods) and 3 rods in the upper cluster (one rod with Gd-doped fuel). The rods are instrumented with expansion thermometers (ETs), fuel and cladding elongation detectors (EFs and ECs) and pressure transducers (PFs). Repeated calorimetric power measurements, physics calculations by the HELIOS code and gamma scans of selected rods in both clusters enabled the power and burnup determination to be qualified and corrected. The data suggest that as of May 2004 the power ratings in both fuels are much alike and burnups are about 30 and 34 MW/kgUO{sub 2} in the Gd-doped and ordinary UO{sub 2} rods respectively. Analysis of in-pile measurements compared with calculations shows that neutron absorption affects fuel temperature, power and burnup radial distributions in Gd-doped fuel at BOL compared with UO{sub 2} fuel. Sensitivity analyses performed with the HELIOS and FTEMP3 codes show that fuel centreline temperature in Gd-doped fuel is influenced by radial power depression, depletion of fissile materials and absorbing Gd isotopes as well as thermal conductivity of the fuel matrix and its degradation during irradiation. Analysis of the fuel dimension changes revealed densification only in the UO{sub 2} fuel whereas fuel elongation measurements in the Gd-doped fuel rods indicated essentially constant swelling with burnup. At burnups above 5 MWd/kgUO{sub 2} the swelling rate was about 0.5-O.fi % DELTAV/V per 10 MWd/kgUO{sub 2} for both fuel types. Internal pressure measured in the Gd-doped rod at BOL showed slight fuel densification and possibly He gas absorption, whereas derived swelling rate was somewhat Iarger than values obtained from the fuel elongation measurements. Cladding elongation measurements

  2. Investigation of (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-x} grown by MOCVD on a simplified IBAD MgO template

    Energy Technology Data Exchange (ETDEWEB)

    Stan, L; Holesinger, T G; Maiorov, B; Civale, L; DePaula, R F; Jia, Q X [Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Chen, Y [SuperPower, Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States); Xiong, X; Selvamanickam, V [Mechanical Engineering Department, University of Houston, Houston, TX 77204-4006 (United States)

    2010-01-15

    We have used an ion beam sputtered Y{sub 2}O{sub 3}-Al{sub 2}O{sub 3} (YALO) composite to simplify the architecture of high temperature superconducting (HTS) coated conductors (CCs) based on a IBAD MgO template. By implementing YALO, we have reduced the total non-superconducting layers between the polycrystalline metal substrate and the superconducting film from five (the standard architecture) to four. Well textured (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-x} ((Y, Gd)BCO) films have been successfully grown by MOCVD on this simplified template. The microstructural characterization revealed that all layers are continuous and uniform with sharp and clean interfaces. Additionally, the YALO maintained its amorphous nature after the deposition of the superconductive layer, which is a plus in terms of its efficiency as a diffusion barrier. The achievement of a self-field critical current of 230 A cm{sup -1} at 75.5 K is another proof of the effectiveness of YALO as a diffusion barrier and nucleation seed for the MgO. The transport properties under an applied magnetic field of MOCVD grown (Y, Gd)BCO on LMO buffered MgO/YALO/Ni-alloy are comparable with those of (Y, Gd)BCO on a standard architecture, thus demonstrating good compatibility between the simplified template with the MOCVD grown (Y, Gd)BCO. The use of a single composite YALO layer instead of individual layers of Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} for the large scale fabrication of HTS CCs based on IBAD MgO provides advantages such as potentially reduced cost due to the reduced number of fabrication steps.

  3. Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T.

    Science.gov (United States)

    Majkic, Goran; Pratap, Rudra; Xu, Aixia; Galstyan, Eduard; Selvamanickam, Venkat

    2018-05-03

    An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (J c ) of 15.11 MA/cm 2 has been measured over a bridge at 30 K, 3T, corresponding to an equivalent (I c ) value of 8705 A/12 mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author's knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50 K, respectively, are 15.11, 9.70 and 6.26 MA/cm 2 , corresponding to equivalent Ic values of 8705, 5586 and 3606 A/12 mm and engineering current densities (J e ) of 7068, 4535 and 2928 A/mm 2 . The engineering current density (J e ) at 40 K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5 mol% Zr addition. Such record-high performance in thick films (>1 µm) is a clear demonstration that growing thick REBCO films with high critical current density (J c ) is possible, contrary to the usual findings of strong J c degradation with film thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar flow achieved in the A-MOCVD system, coupled with optimization of BaZrO 3 nanorod growth parameters.

  4. Influence of alumina on photoluminescence and thermoluminescence characteristics of Gd{sup 3+} doped barium borophosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kalpana, T. [Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar 522 510, A.P. (India); Gandhi, Y. [Department of Physics, Kakani Venkata Ratnam College, Nandigama 521 185, A.P. (India); Sanyal, Bhaskar [Food Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085 (India); Sudarsan, V. [Bhabha Atomic Research Centre, Chemistry Division, Mumbai 400 085 (India); Bragiel, P.; Piasecki, M. [Institute of Physics, Jan Dlugosz University, Ul. Armii Krajowej 13/15, Czestochowa 42-201 (Poland); Kumar, V. Ravi [Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar 522 510, A.P. (India); Veeraiah, N., E-mail: nvr8@rediffmail.com [Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar 522 510, A.P. (India)

    2016-11-15

    Gd{sup 3+} doped barium borophosphate glasses mixed with varying concentration of Al{sub 2}O{sub 3} are synthesized. Photoluminescence, thermoluminescence and other spectroscopic studies viz., IR and EPR spectral studies, have been carried out. IR spectral studies of these glasses indicated that there is a gradual increase in the degree of depolymerization of the glass network with increase in the concentration of Al{sub 2}O{sub 3} upto 3.0 mol%. The EPR spectral studies revealed the lowest concentration of Gd{sup 3+} ion clusters in the glass mixed with 3.0 mol% of Al{sub 2}O{sub 3}. The photoluminescence emission spectra exhibited strong ultraviolet blue emission at 311 under excitation at 273 nm due to {sup 6}P{sub 7/2}→{sup 8}S{sub 7/2} transition of Gd{sup 3+} ions. The intensity of this band is found to be enhanced four times when the glass mixed with 3.0 mol% of Al{sub 2}O{sub 3} with respect to that of alumina free glass. The enrichment of this emission is attributed to the declustering of Gd{sup 3+} ions by Al{sup 3+} ions. Thermoluminescence (TL) characteristics of these glasses have also been investigated after irradiating them with different doses of γ-rays (in the range 0–8.0 kGy). The TL emission exhibited a dosimetric peak at about 200 °C. The TL output under this glow peak is observed to increase with increase of γ-ray dose. For any fixed γ-ray dose, the TL output is increased with increasing Al{sub 2}O{sub 3} content up to 3.0 mol% and beyond this concentration quenching of TL is observed. The mechanisms responsible for TL emission and the variation in TL output with the concentration of Al{sub 2}O{sub 3} are quantitatively discussed in terms of electron and hole centers developed due to interaction of γ-rays with the glass network. The dose response of these glass samples exhibited linear behavior in the dose range 0–8.0 kGy.

  5. Ethanol Sensor of CdO/Al2O3/CeO2 Obtained from Ce-DOPED Layered Double Hydroxides with High Response and Selectivity

    Science.gov (United States)

    Xu, Dongmei; Guan, Meiyu; Xu, Qinghong; Guo, Ying; Wang, Yao

    2013-04-01

    In this paper, Ce-doped CdAl layered double hydroxide (LDH) was first synthesized and the derivative CdO/Al2O3/CeO2 composite oxide was prepared by calcining Ce-doped CdAl LDH. The structure, morphology and chemical state of the Ce doped CdAl LDH and CdO/Al2O3/CeO2 were also investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), solid state nuclear magnetic resonance (SSNMR), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The gas sensing properties of CdO/Al2O3/CeO2 to ethanol were further studied and compared with CdO/Al2O3 prepared from CdAl LDH, CeO2 powder as well as the calcined Ce salt. It turns out that CdO/Al2O3/CeO2 sensor shows best performance in ethanol response. Besides, CdO/Al2O3/CeO2 possesses short response/recovery time (12/72 s) as well as remarkable selectivity in ethanol sensing, which means composite oxides prepared from LDH are very promising in gas sensing application.

  6. Microspheres of UO2, ThO2 and PuO2 for the high temperature reactor

    International Nuclear Information System (INIS)

    Brandau, E.

    2002-01-01

    The production of high temperature reactor fuel, so called pebble fuel, was done in the eighties by a special vibrational dropping process to obtain as sintered UO 2 - or ThO 2 -microspheres, so called 'Kernels', with a diameter size of about 300 μm. These microspheres have been coated and embedded in carbon balls to get the pebble fuel. Since the early nineties BRACE is developing the processings of microspheres starting with sols and suspensions to produce Al 2 O 3 , ZrO 2 , HfO 2 and Actinide oxide microspheres. Two main developments have been made: 1) the preparation of the feed solution (sol, suspension) and the solidification processing, and 2) the equipment, design, and electronic control have been completely changed. A newly developed suspension process for actinide oxides and for metal oxides e.g. Al 2 O 3 , TiO 2 , SiO 2 , ZrO 2 , HfO 2 , CeO 2 , ThO 2 , UO 2 , PuO 2 leads to cheaper production of as sintered microspheres. The processing and the installations will be described and the experience of production will be shown. (author)

  7. ALD Produced B{sub 2}O{sub 3}, Al{sub 2}O{sub 3} and TiO{sub 2} Coatings on Gd{sub 2}O{sub 3} Burnable Poison Nanoparticles and Carbonaceous TRISO Coating Layers

    Energy Technology Data Exchange (ETDEWEB)

    Weimer, Alan

    2012-11-26

    This project will demonstrate the feasibility of using atomic layer deposition (ALD) to apply ultrathin neutron-absorbing, corrosion-resistant layers consisting of ceramics, metals, or combinations thereof, on particles for enhanced nuclear fuel pellets. Current pellet coating technology utilizes chemical vapor deposition (CVD) in a fluidized bed reactor to deposit thick, porous layers of C (or PyC) and SiC. These graphitic/carbide materials degrade over time owing to fission product bombardment, active oxidation, thermal management issues, and long-term irradiation effects. ALD can be used to deposit potential ceramic barrier materials of interest, including ZrO{sub 2}, Y{sub 2}O{sub 3}:ZrO{sub 2} (YSZ), Al{sub 2}O{sub 3}, and TiO{sub 2}, or neutron-absorbing materials, namely B (in BN or B{sub 2}O{sub 3}) and Gd (in Gd{sub 2}O{sub 3}). This project consists of a two-pronged approach to integrate ALD into the next-generation nuclear plant (NGNP) fuel pellet manufacturing process:

  8. Carbonato-bridged Ni(II)2Ln(III)2 (Ln(III) = Gd(III), Tb(III), Dy(III)) complexes generated by atmospheric CO2 fixation and their single-molecule-magnet behavior: [(μ4-CO3)2{Ni(II)(3-MeOsaltn)(MeOH or H2O)Ln(III)(NO3)}2]·solvent [3-MeOsaltn = N,N'-bis(3-methoxy-2-oxybenzylidene)-1,3-propanediaminato].

    Science.gov (United States)

    Sakamoto, Soichiro; Fujinami, Takeshi; Nishi, Koshiro; Matsumoto, Naohide; Mochida, Naotaka; Ishida, Takayuki; Sunatsuki, Yukinari; Re, Nazzareno

    2013-06-17

    Atmospheric CO2 fixation of [Ni(II)(3-MeOsaltn)(H2O)22.5H2O [3-MeOsaltn = N,N'-bis(3-methoxy-2-oxybenzylidene)-1,3-propanediaminato], Ln(III)(NO3)3·6H2O, and triethylamine occurred in methanol/acetone, giving a first series of carbonato-bridged Ni(II)2Ln(III)2 complexes [(μ4-CO3)2{Ni(II)(3-MeOsaltn)(MeOH)Ln(III)(NO3)}2] (1Gd, 1Tb, and 1Dy). When the reaction was carried out in acetonitrile/water, it gave a second series of complexes [(μ4-CO3)2{Ni(II)(3-MeOsaltn)(H2O)Ln(III)(NO3)}22CH3CN·2H2O (2Gd, 2Tb, and 2Dy). For both series, each Ni(II)2Ln(III)2 structure can be described as two di-μ-phenoxo-bridged Ni(II)Ln(III) binuclear units bridged by two carbonato CO3(2-) units to form a carbonato-bridged (μ4-CO3)2{Ni(II)2Ln(III)2} structure. The high-spin Ni(II) ion has octahedral coordination geometry, and the Ln(III) ion is coordinated by O9 donor atoms from Ni(II)(3-MeOsaltn), bidentate NO3(-), and one and two oxygen atoms of two CO3(2-) ions. The NO3(-) ion for the first series roughly lie on Ln-O(methoxy) bonds and are tilted toward the outside, while for the second series, the two oxygen atoms roughly lie on one of the Ln-O(phenoxy) bonds due to the intramolecular hydrogen bond. The temperature-dependent magnetic susceptibilities indicated a ferromagnetic interaction between the Ni(II) and Ln(III) ions (Ln(III) = Gd(III), Tb(III), Dy(III)) for all of the complexes, with a distinctly different magnetic behavior between the two series in the lowest-temperature region due to the Ln(III)-Ln(III) magnetic interaction and/or different magnetic anisotropies of the Tb(III) or Dy(III) ion. Alternating-current susceptibility measurements under the 0 and 1000 Oe direct-current (dc) bias fields showed no magnetic relaxation for the Ni(II)2Gd(III)2 complexes but exhibited an out-of-phase signal for Ni(II)2Tb(III)2 and Ni(II)2Dy(III)2, indicative of slow relaxation of magnetization. The energy barriers, Δ/kB, for the spin flipping were estimated from the Arrhenius

  9. Dielectric, piezoelectric properties of MnO2-doped (K0.5Na0.5)NbO3–0.05LiNbO3 crystal grown by flux-Bridgman method

    International Nuclear Information System (INIS)

    Liu, Ying; Xu, Guisheng; Liu, Jinfeng; Yang, Danfeng; Chen, Xiaxia

    2014-01-01

    Highlights: • KNN–0.05LN based single crystals were grown by flux-Bridgman method. • Dielectric, piezoelecrc and ferroelectric properties were studied. • The effect of MnO 2 doping on the crystals' properties. • Dielectric and other properties were improved due to MnO 2 doping. - Abstract: Lead-free potassium sodium niobate piezoelectric single crystals substituted with lithium and then doped with MnO 2 (K 0.5 Na 0.5 )NbO 3 –0.05LiNbO 3 –yMnO 2 (y = 0%, 1.0% and 1.5%) (abbreviated as KNN–0.05LN–yMnO 2 ) have been grown by flux-Bridgman method using KCl–K 2 CO 3 eutectic composition as the flux. Their actual composition as well as the dielectric and piezoelectric properties were studied. Their actual composition deviated from the ratio of the raw materials due to different segregation coefficients of K and Na. The orthorhombic–tetragonal (T o–t ) and tetragonal–cubic phase transition temperature (the Curie temperature T c ) of the single crystal appears at 186 °C and 441 °C, respectively, for KNN–0.05LN–1.0%MnO 2 , shift to higher temperatures compared with that of pure KNN–0.05LN crystals, according to the dielectric permittivity versus temperature loops. The KNN–0.05LN–1.0%MnO 2 (001) plate shows higher piezoelectric coefficient d 33 and dielectric permittivity ε r when compared with pure KNN–0.05LN crystal, being on the order of 226 pC/N and 799 (161 pC/N and 530 for KNN–0.05LN), respectively. These excellent properties show that MnO 2 dopant is effective in improving KNN–0.05LN based piezoelectric crystals

  10. Introduction of BaSnO3 and BaZrO3 artificial pinning centres into 2G HTS wires based on PLD-GdBCO films. Phase I of the industrial R&D programme at SuperOx

    Science.gov (United States)

    Chepikov, V.; Mineev, N.; Degtyarenko, P.; Lee, S.; Petrykin, V.; Ovcharov, A.; Vasiliev, A.; Kaul, A.; Amelichev, V.; Kamenev, A.; Molodyk, A.; Samoilenkov, S.

    2017-12-01

    An industrial R&D programme is ongoing at SuperOx, aimed at improving 2G HTS wire performance in magnetic field. We introduce perovskite artificial pinning centres (APC) into the HTS layer matrix. In contrast to most studies described in the literature, we use the high rate production processing parameters and PLD equipment at SuperOx. This paper reports the results of Phase I of this programme. We fabricated 2G HTS wires by pulsed laser deposition of GdBCO films doped with 6%, 12% and 18% (molar) of BaSnO3 and 6% (molar) of BaZrO3, and compared their performance with an undoped reference sample. The depositions were carried out at production growth rates of 375, 560 and 750 nm min-1 by varying laser pulse frequency. BaZrO3 and BaSnO3 formed columnar semi-coherent nanoinclusions in the GdBCO film matrix. The average transverse size of the nanocolumns was about 5 nm, and their volume density correlated with the dopant concentration. All doped samples exhibited much lower angular anisotropy of in-field critical current and higher lift-factors than the undoped sample. Samples containing 6% BaSnO3 and deposited at the lower growth rates, had higher I c than the undoped sample in the entire temperature range, in a wide range of magnetic field (B//c). The sample containing 6% BaZrO3 had higher I c than the undoped sample at 20 and 4.2 K. These results are an encouraging start of our programme, as they show a positive impact of APC introduced into 2G HTS wires fabricated at production throughput. Phase II work will be focussed on maximising the improvements in specific temperature and field conditions, as well as on the verification of reproducibility of the improvements in production wires.

  11. Absorption spectra of CsNd(MoO4)2 and CsGd(MoO4)2-Nd3+ crystals in strong magnetic fields

    International Nuclear Information System (INIS)

    Gorban', I.S.; Kozeeva, L.P.; Slobodyanyuk, A.V.; Shevchenko, V.A.

    1987-01-01

    The comparison of the electronic structure of Nd 3+ in CsNd(MoO 4 ) 2 and CsGd(MoO 4 ) 2 - Nd 3+ crystals is made. It is established that in these crystals the activator centers, mainly, of the certain type with the symmetry of the local environment C 2 are formed. The absorption spectra of self-activated CsNd(MoO 4 ) 2 crystal differ from spectra of CsGd(MoO 4 ) 2 - Nd 3+ by the presence of the vibrating structure. The Stark splittings of energy levels of Nd 3+ in the investigated crystalline matrices are more sensitive to the environment effect than the Zeeman ones. The ground state of Nd 3+ ion in CsNd(MoO 4 ) 2 and CsGd(MoO 4 ) 2 molybdates is characterized by the similar values of g-factors

  12. Colloidal GdVO4:Eu3+@SiO2 nanocrystals for highly selective and sensitive detection of Cu2+ ions

    Science.gov (United States)

    Liang, Yanjie; Noh, Hyeon Mi; Park, Sung Heum; Choi, Byung Chun; Jeong, Jung Hyun

    2018-03-01

    Nowadays, in view of health and safety demands, the controlled design of selective and sensitive sensors for Cu2+ detection is of considerable importance. Therefore, we construct herein core-shell colloidal GdVO4:Eu3+@SiO2 nanocrystals (NCs) as optical sensor for the detection of Cu2+, which were synthesized by a facile hydrothermal reaction and encapsulated with a uniform layer of ultrathin silica through a sol-gel strategy. The NCs present strong red emission due to energy transfer from VO43- groups to Eu3+ when exciting with ultraviolet (UV) light. This intense red emission from Eu3+ could be selectively quenched in the presence of Cu2+ in comparison to other metal ions and the limit of detection is as low as 80 nM in aqueous solution. It is revealed that the spectral overlap between the emission band of NCs and the absorption of Cu2+ accounts for this intriguing luminescence behavior. The detection ability is highly reversible by the addition of ethylenediaminetetraacetic acid (EDTA) with the recovery of almost 100% of the original luminescence. The luminescence quenching and recovery processes can be performed repeatedly with good sensing ability. These remarkable performances allow the colloidal GdVO4:Eu3+@SiO2 NCs a promising fluorescence chemosensor for detecting Cu2+ ions in aqueous solution.

  13. Tuning electronic properties of In2O3 nanowires by doping control

    International Nuclear Information System (INIS)

    Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.

    2004-01-01

    We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications

  14. Epitaxial growth of cubic Gd{sub 2}O{sub 3} thin films on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Molle, A; Wiemer, C; Bhuiyan, M D N K; Tallarida, G; Fanciulli, M [CNR-INFM, Laboratorio Nazionale MDM, via C. Olivetti 2, I-20041 Agrate Brianza (Italy)], E-mail: alessandro.molle@mdm.infm.it

    2008-03-15

    Gd{sub 2}O{sub 3} thin films were grown on Ge (001) substrates by molecular beam epitaxy. The epitaxial character of the film is demonstrated by electron diffraction during the growth. The structural characterization of the films shows that the Gd{sub 2}O{sub 3} forms a bixbyite polymorph with a (110) out-of-plane orientation. The formation of bixbyite structured Gd{sub 2}O{sub 3} is discussed in terms of the atomic arrangement of the oxide planes on the Ge(001) surface.

  15. Impedance spectroscopy of Li2CO3 doped (Ba,Sr)TiO3 ceramic

    Science.gov (United States)

    Ham, Yong-Su; Koh, Jung-Hyuk

    2013-02-01

    (BaxSr1-x)TiO3-based ceramic has been considered as one of the most important electronic materials widely employed in microwave passive device applications. Many researches have been performed to lower the high sintering temperature, by adding various dopants such as B2O3, La2O3, etc. In our previous study, by adding Li2CO3 to (Ba0.5,Sr0.5)TiO3 ceramics, the sintering temperature of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics decreased from 1350 to 900 °C. This study observed the crystalline structure and electrical properties of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics. In scanning the crystalline structure of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics, no pyro phase was observed by X-ray diffraction analysis. To investigate the electrical properties of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics, real and imaginary parts of the impedances were analyzed. Complex impedance data were measured from 100 Hz to 1 MHz at various temperature ranges.

  16. Hydrothermal synthesis of nanostructured Y2O3 and (Y0.75Gd0.25)2O3 based phosphors

    Science.gov (United States)

    Mančić, Lidija; Lojpur, Vesna; Marinković, Bojan A.; Dramićanin, Miroslav D.; Milošević, Olivera

    2013-08-01

    Examples of (Y2O3-Gd2O3):Eu3+ and Y2O3:(Yb3+/Er3+) rare earth oxide-based phosphors are presented to highlight the controlled synthesis of 1D and 2D nanostructures through simple hydrothermal method. Conversion of the starting nitrates mixture into carbonate hydrate phase is performed with the help of ammonium hydrogen carbonate solution during hydrothermal treatment at 200 °C/3 h. Morphological architectures of rare earth oxides obtained after subsequent powders thermal treatment at 600 and 1100 °C for 3 and 12 h and their correlation with the optical characteristics are discussed based on X-ray powder diffractometry, field emission scanning electron microscopy, infrared spectroscopy and photoluminescence measurements. Strong red and green emission followed by the superior decay times are attributed to the high powders purity and homogeneous dopants distribution over the host lattice matrix.

  17. Polyethylene glycol-covered ultra-small Gd2O3 nanoparticles for positive contrast at 1.5 T magnetic resonance clinical scanning

    Science.gov (United States)

    Fortin, Marc-André; Petoral, Rodrigo M., Jr.; Söderlind, Fredrik; Klasson, A.; Engström, Maria; Veres, Teodor; Käll, Per-Olof; Uvdal, Kajsa

    2007-10-01

    The size distribution and magnetic properties of ultra-small gadolinium oxide crystals (US-Gd2O3) were studied, and the impact of polyethylene glycol capping on the relaxivity constants (r1, r2) and signal intensity with this contrast agent was investigated. Size distribution and magnetic properties of US-Gd2O3 nanocrystals were measured with a TEM and PPMS magnetometer. For relaxation studies, diethylene glycol (DEG)-capped US-Gd2O3 nanocrystals were reacted with PEG-silane (MW 5000). Suspensions were adequately dialyzed in water to eliminate traces of Gd3+ and surfactants. The particle hydrodynamic radius was measured with dynamic light scattering (DLS) and the proton relaxation times were measured with a 1.5 T MRI scanner. Parallel studies were performed with DEG-Gd2O3 and PEG-silane-SPGO (Gd2O3,DTPA and the r2/r1 ratio was 1.4. PEG-silane-SPGO gave low r1 relaxivities and high r2/r1 ratios, less compatible with positive contrast agent requirements. Higher r1 were obtained with PEG-silane in comparison to DEG-Gd2O3. Treatment of DEG-US-Gd2O3 with PEG-silane provides enhanced relaxivity while preventing aggregation of the oxide cores. This study confirms that PEG-covered Gd2O3 nanoparticles can be used for positively contrasted MR applications requiring stability, biocompatible coatings and nanocrystal functionalization.

  18. Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

    KAUST Repository

    Khim, Dongyoon

    2017-03-15

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  19. Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

    KAUST Repository

    Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D.

    2017-01-01

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  20. Al2O3 doping of TiO2 electrodes and applications in dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Eom, Tae Sung; Kim, Kyung Hwan; Bark, Chung Wung; Choi, Hyung Wook

    2014-01-01

    Dye-sensitized solar cells (DSSCs) have been intensively studied since their discovery in 1991. DSSCs have been extensively researched over the past decades as cheaper alternatives to silicon solar cells due to their high energy-conversion efficiency and their low production cost. However, some problems need to be solved in order to enhance the efficiency of DSSCs. In particular, the electron recombination that occurs due to the contact between the transparent conductive oxide (TCO) and a redox electrolyte is one of the main limiting factors of efficiency. In this work, we report for the first time the improvement of the photovoltaic characteristics of DSSCs by doping TiO 2 with Al 2 O 3 . DSSCs were constructed using composite particles of Al 2 O 3 -doped TiO 2 and TiO 2 nanoparticles. The DSSCs using Al 2 O 3 showed the maximum conversion efficiency of 6.29% due to effective electron transport. DSSCs based on Al 2 O 3 -doped TiO 2 films showed better photovoltaic performance than cells fabricated with only TiO 2 nanoparticles. This result is attributed to the prevention of electron recombination between electrons in the TiO 2 conduction band with holes in the dye or the electrolyte. There mechanism is suggested based on impedance results, which indicated improved electron transport at the TiO 2 /dye/electrolyte interface.

  1. Room temperature ferromagnetism in Fe-doped CeO2 nanoparticles.

    Science.gov (United States)

    Maensiri, Santi; Phokha, Sumalin; Laokul, Paveena; Seraphin, Supapan

    2009-11-01

    RT ferromagnetism was observed in nanoparticles of Fe-doped CeO2 (i.e., Ce(0.97)Fe(0.03)O2) synthesized by a sol-gel method. The undoped and Fe-doped CeO2 were characterized by XRD, Raman spectroscopy, TEM, and VSM. The undoped samples and Ce(0.97)Fe(0.03)O2 precursor exhibit a diamagnetic behavior. The 673 K-calcined Ce(0.97)Fe(0.03)O2 sample is paramagnetic whereas 773 and 873 K-calcined Ce(0.97)Fe(0.03)O2 samples are ferromagnetism having the magnetizations of 4.65 x 10(-3) emu/g and 6.20 x 10(-3) emu/g at 10 kOe, respectively. Our results indicate that the ferromagnetic property is intrinsic to the Fe-doped CeO2 system and is not a result of any secondary magnetic phase or cluster formation.

  2. Internal fields on Gd3+ ions diluted in Eu2CuO4

    International Nuclear Information System (INIS)

    Zysler, R.D.

    1990-01-01

    The EPR spectrum of dilute Gd 3+ ions substituting for Eu 3+ in Eu 2 CuO 4 at 9 GHz and 35 GHz in the temperature range of room temperature down 1.5K have been measured. Each one of the resonance lines shows a splitting into two or more weaker lines below T N ∼ 215K. The simultaneous appearance of a low field microwave absorption signal is attributed to the onset of long range antiferromagnetic ordering with a weak ferromagnetic component. The splitting of the EPR spectrum is associated with different Gd sites in the magnetically ordered structure. A reduction of the local symmetry of the rare earth sites below T N is described in terms of an internal magnetic field lying in the ab-plane. Dipolar and exchange contributions to the internal field are discussed. A strong dependence of the GdEPR spectrum and the microwave absorption on the magnetic history of the samples has been observed, suggesting the formation of magnetic domains or a glassy state. (Author) [es

  3. Energy transfer phenomena in GdF sub 3 :Mn co-doped with Ce sup 3 sup + , Pr sup 3 sup + or Zr sup 4 sup +

    CERN Document Server

    Kobayashi, M; Ishii, M; Solovieva, N; Nikl, M

    2003-01-01

    We studied the effects of Mn sup 2 sup + doping and Ce sup 3 sup + or Pr sup 3 sup + or Zr sup 4 sup + co-doping on the scintillation characteristics of GdF sub 3 powder crystals including excitation-emission spectra and decay time for UV excitation, light yield (LY) and luminescence spectra for X-rays. In GdF sub 3 :Mn sup 2 sup + , the dominant Mn sup 2 sup + emission occurred at 515 nm with a decay constant tau - 24 ms for excitation at 275 nm. The LY increased monotonically as the Mn sup 2 sup + concentration decreased from 1 at.% down to 20 at.ppm, indicating very efficient Gd sup 3 sup + -> Mn sup 2 sup + energy transfer and possible concentration quenching at large Mn sup 2 sup + concentrations. The maximum LY for X-rays was about 19% of Gd sub 2 O sub 2 S:Pr sup 3 sup + , Ce sup 3 sup + , one of the brightest ceramics scintillators employed in X-ray computed tomography. While efficient energy transfers of Ce sup 3 sup + -> Gd sup 3 sup + and Ce sup 3 sup + -> (Gd sup 3 sup +) sub n -> Mn sup 2 sup + w...

  4. Study of conduction mechanism in Fe{sub 2}O{sub 3} doped Na{sub 2}O·Bi{sub 2}O{sub 3}·B{sub 2}O{sub 3} semiconducting glasses

    Energy Technology Data Exchange (ETDEWEB)

    Ahlawat, Navneet [Matu Ram Institute of Engineering and Management, Rohtak 124001, Haryana (India); Aghamkar, Praveen [Department of Physics, Chaudhary Devi Lal University, Sirsa 125055, Haryana (India); Agarwal, Ashish [Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana (India); Ahlawat, Neetu, E-mail: neetugju@yahoo.co.in [Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana (India)

    2016-02-01

    Conduction mechanism in Fe{sub 2}O{sub 3} doped Na{sub 2}O·Bi{sub 2}O{sub 3}·B{sub 2}O{sub 3} semiconducting glass system was studied in frequency range 10 Hz to 1 MHz and at temperatures between room temperature and 663 K. The total conductivity spectrum follows universal power law with frequency exponent ‘s’ value less than unity and lies in the range 0.51≤s≤0.78. These ranges of ‘s’ values indicate that the carrier transport is predominately due to hopping electrons between charged defects and show temperature dependence as predicted by correlated barrier hopping (CBH) model. The change in activation energy of dc conductivity with temperature reveals the change in conduction mode from small polaron hopping (SPH) at high temperatures (T>θ{sub D}/2) to variable range hopping (VRH) at low temperatures (T<θ{sub D}/2). The range of density of states at Fermi level N (E{sub F})=7.25×10{sup 21}–1.32×10{sup 21} eV{sup −1} cm{sup −3} at temperatures below θ{sub D}/2 corresponds to localized states near Fermi level. The large values of activation energy W{sub 2} (0.067–0.155 eV) dominated the conduction may results in high range of temperature (T=503– 423 K) for variable-range hopping conduction in these glasses.

  5. NMR relaxometric properties and cytotoxicity of Gd2O3 nanoparticle suspensions in an organic liquid

    Science.gov (United States)

    Babić-Stojić, Branka; Jokanović, Vukoman; Milivojević, Dušan; Požek, Miroslav; Jagličić, Zvonko; Makovec, Darko; Arsikin, Katarina; Paunović, Verica

    2014-10-01

    Gd2O3 nanoparticles and their agglomerates from approximately 10 to 80 nm in size suspended in an organic liquid were synthesized via polyol route. The reaction between diethylene glycol and added acetic acid, which occurred simultaneously with the synthesis of Gd2O3 nanoparticles, was catalyzed by sodium bisulfate to transform as much as possible diethylene glycol in corresponding ester at the end of complete reaction. The produced nanosized material of gadolinium oxide was investigated by TEM, DLS, FTIR spectroscopy, and NMR relaxometry. Biological evaluation of this material was done by MTT and crystal violet assays to determine the cell viability. Longitudinal and transverse relaxivities of water-diluted Gd2O3 nanoparticle suspensions estimated to be r 1 = 13.6 and r 2 = 14.7 s-1 mM-1 are about three times higher compared to the relaxivities obtained for standard contrast agent Gd-DTPA (Magnevist). Good MRI signal intensities of the water-diluted Gd2O3 nanoparticle suspensions were recorded in the Gd concentration range 0.2-0.3 mM for which the suspensions were not toxic exhibiting simultaneously higher signal intensities than those for Magnevist in the Gd concentration range 0.4-1 mM for which this standard contrast agent was not toxic. These properties make the produced Gd2O3 nanoparticle material promising for potential application as MRI contrast agent.

  6. Highly active Ni/Y-doped ZrO{sub 2} catalysts for CO{sub 2} methanation

    Energy Technology Data Exchange (ETDEWEB)

    Takano, H., E-mail: takano_hi@hitachizosen.co.jp [Hitachi Zosen Corporation, Kashiwa, 277-8515 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, 060-8628 (Japan); Kirihata, Y.; Izumiya, K.; Kumagai, N. [Hitachi Zosen Corporation, Kashiwa, 277-8515 (Japan); Habazaki, H., E-mail: habazaki@eng.hokudai.ac.jp [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, 060-8628 (Japan); Division of Applied Chemistry & Frontier Chemistry Center, Faculty of Engineering, Hokkaido University, Sapporo, 060-8628 (Japan); Hashimoto, K. [Tohoku Institute of Technology, Sendai, 277-8515 (Japan)

    2016-12-01

    Highlights: • The Ni/Y-doped ZrO{sub 2} catalysts show highly catalytic activity for CO{sub 2} methanation. • Bidentate carbonate is a major adsorption spice on the Ni/Y-doped ZrO{sub 2} catalysts. • The oxide support of t-ZrO{sub 2} and/or c-ZrO{sub 2} with oxygen vacancies plays a key role. - Abstract: The catalytic methanation of CO{sub 2} was carried out on Ni catalysts supported on Y-doped ZrO{sub 2} with various Y{sup 3+} concentrations and Ni/(Zr + Y) molar ratio = 1. The catalysts were characterized by X-ray diffraction, scanning transmission electron microscopy, specific surface area, temperature-programmed desorption of CO{sub 2}, and temperature-programmed reaction. In addition, operando diffuse-reflectance infrared Fourier-transform spectroscopy (DRIFT) was used to identify the adsorbed reaction intermediate. Catalysts supported on Y-doped ZrO{sub 2} show higher catalytic activity than the catalyst on Y-free ZrO{sub 2} with a monoclinic ZrO{sub 2} phase. The catalytic activity is also dependent upon the Y{sup 3+} concentration, and the highest activity was obtained for the catalyst with a Y/(Zr + Y) molar ratio of 0.333, which consists mainly of fcc Ni and cubic ZrO{sub 2} phase. Y{sup 3+} doping into ZrO{sub 2} introduces oxygen vacancies, which play an important role in enhancing the catalytic activity. The operando DRIFT study reveals that a CO adsorption intermediate is absent, and bidentate carbonate is an important intermediate for CH{sub 4} formation.

  7. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

    2011-01-01

    A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Superconducting properties of GdBa{sub 2}Cu{sub 3}O{sub y} films by metal-organic deposition using new fluorine-free complex solutions

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, T. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, Johoku 3-5-1, Hamamatsu, Shizuoka 432-8561 (Japan); Kita, R. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, Johoku 3-5-1, Hamamatsu, Shizuoka 432-8561 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan)], E-mail: terkita@ipc.shizuoka.ac.jp; Miura, O. [Tokyo Metropolitan University, Minamiosawa 1-1, Hachioji, Tokyo 192-0364 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Ichinose, A. [CRIEPI, Nagasaka 2-6-1, Yokosuka, Kanagawa 240-0916 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Matsumoto, K. [Kyushu Institute of Techonology, Sensui-cho, Tobata-ku, Kitakyushu, Hukuoka 804-8550 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Yoshida, Y. [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Mukaida, M. [Kyushu University, Hakozaki 6-10-1, Higashi-ku 4-3-16, Fukuoka 992-8510 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Horii, S. [University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8586 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan)

    2008-09-15

    GdBa{sub 2}Cu{sub 3}O{sub y} (GdBCO) films have been prepared on LaAlO{sub 3} single-crystal substrates by metal-organic deposition (MOD) using new fluorine-free complex solutions consisting of metal 2-ethylhexanates (2-EH) and metal naphthenates. The dispersion of T{sub c} values for GdBCO films improved by using a complex solution, rather than only a solution of metal naphthenates. c-axis oriented GdBCO films with flat surfaces were grown under lower calcining temperatures and higher firing temperatures than in the process using only metal naphthenates. The T{sub c} and J{sub c} of the GdBCO films were 91.2 K and 0.61 MA/cm{sup 2}, respectively, at 77 K at self-field.

  9. Temperature Mapping of Air Film-Cooled Thermal Barrier Coated Surfaces Using Cr-Doped GdAlO3 Phosphor Thermography

    Science.gov (United States)

    Eldridge, Jeffrey I.; Shyam, Vikram; Wroblewski, Adam C.; Zhu, Dongming; Cuy, Michael D.; Wolfe, Douglas E.

    2016-01-01

    It has been recently shown that the high luminescence intensity from a Cr-doped GdAlO3 (Cr:GdAlO3) thermographic phosphor enables non-rastered full-field temperature mapping of thermal barrier coating (TBC) surfaces to temperatures above 1000C. In this presentation, temperature mapping by Cr:GdAlO3 based phosphor thermometry of air film-cooled TBC-coated surfaces is demonstrated for both scaled-up cooling hole geometries as well as for actual components in a burner rig test environment. The effects of thermal background radiation and flame chemiluminescence on the measurements are investigated, and advantages of this method over infrared thermography as well as the limitations of this method for studying air film cooling are discussed.

  10. Preparation of Gd2O3 Ultrafine Nanoparticles by Pulse Electrodeposition Followed by Heat-treatment Method

    Directory of Open Access Journals (Sweden)

    Mustafa Aghazadeh

    2016-12-01

    Full Text Available Gd2O3 nanoparticles were prepared by a two–step process; cathodic electrodeposition followed by heat-treatment method. First, Gd(OH3 nanoparticles was galvanostatically deposited from nitrate bath on the steel substrate by pulse current (PC mode. The deposition experiments was conducted at a typical on-time and off-time (ton=1ms and toff=1ms for 60 min. The electrodeposited precursor was then heat-treated at 600 oC for 3h to obtain oxide product (i.e. Gd2O3. The morphological and structural analyses confirmed that the gadolinium hydroxynitrate nanoparticles with composition of [Gd(OH2.5(NO30.5 yH2O] and uniform size about 10 nm have been prepared during pulse cathodic electrodeposition process. Furthermore, mechanism of the gadolinium hydroxynitrate nanoparticles was explained based on the base (OH– electrogeneration process on the cathode surface. The morphological observations by SEM and TEM, and structural analyses via XRD and FT-IR revealed that the oxide product is composed of well-dispersed Gd2O3 nanoparticles with pure cubic crystalline structure. It was observed that the calcination process has no effect on the morphology of the Gd2O3 nanoparticles. Mechanism of oxide formation during heat-treatment step was investigated by DSC-TG analysis and discussed in detail. The results of this work showed that pulse current deposition followed by heat–treatment can be recognized as an easy and facile method for preparation of the Gd2O3 fine nanoparticles.

  11. Photoluminescence and thermoluminescence properties of Eu2+ doped and Eu2+ ,Dy3+ co-doped Ba2 MgSi2 O7 phosphors.

    Science.gov (United States)

    Sao, Sanjay Kumar; Brahme, Nameeta; Bisen, D P; Tiwari, Geetanjali

    2016-11-01

    In this work, we report the preparation, characterization, comparison and luminescence mechanisms of Eu 2 + -doped and Eu 2 + ,Dy 3 + -co-doped Ba 2 MgSi 2 O 7 (BMSO) phosphors. Prepared phosphors were synthesized via a high temperature solid-state reaction method. All prepared phosphors appeared white. The phase structure, particle size, and elemental analysis were analyzed using X-ray diffraction (XRD), transmission electron microscopy (TEM) and energy-dispersive X-ray (EDX) analysis. The luminescence properties of the phosphors were investigated by thermoluminescence (TL) and photoluminescence (PL). The PL excitation and emission spectra of Ba 2 MgSi 2 O 7 :Eu 2 + showed the peak to be around 381 nm and 490 nm respectively. The PL excitation spectrum of Ba 2 MgSi 2 O 7 :Eu 2 + Dy 3 + showed the peak to be around 341 nm and 388 nm, and the emission spectrum had a broad band around 488 nm. These emissions originated from the 4f 6 5d 1 to 4f 7 transition of Eu 2 + . TL analysis revealed that the maximum TL intensity was found at 5 mol% of Eu 2 + doping in Ba 2 MgSi 2 O 7 phosphors after 15 min of ultraviolet (UV) light exposure. TL intensity was increased when Dy 3 + ions were co-doped in Ba 2 MgSi 2 O 7 :Eu 2 + and maximum TL intensity was observed for 2 mol% of Dy 3 + . TL emission spectra of Ba 1.95 MgSi 2 O 7 :0.05Eu 2 + and Ba 1.93 MgSi 2 O 7 :0.05Eu 2 + ,0.02Dy 3 + phosphors were found at 500 nm. TL intensity increased with UV exposure time up to 15 min, then decreased for the higher UV radiation dose for both Eu doping and Eu,Dy co-doping. The trap depths were calculated to be 0.54 eV for Ba 1.95 MgSi 2 O 7 :0.05Eu 2 + and 0.54 eV and 0.75 eV for Ba 1.93 MgSi 2 O 7 :0.05Eu 2 + ,0.02Dy 3 + phosphors. It was observed that co-doping with small amounts of Dy 3 + enhanced the thermoluminescence properties of Ba 2 MgSi 2 O 7 phosphor. Copyright © 2016 John Wiley & Sons, Ltd. [Correction added on 5 April 2016, after first online publication: The

  12. Spectroscopic analysis and laser performance of Tm3+ : NaGd(MoO4)2 crystal

    International Nuclear Information System (INIS)

    Guo Weijie; Chen Yujin; Lin Yanfu; Gong Xinghong; Luo Zundu; Huang Yidong

    2008-01-01

    Detailed polarized spectral properties of Tm 3+ : NaGd(MoO 4 ) 2 crystal have been investigated. The room temperature absorption and fluorescence spectra were recorded. The fluorescence decay mechanisms of the 1 G 4 and 3 H 4 multiplets in Tm 3+ : NaGd(MoO 4 ) 2 crystal were discussed. Room temperature quasi-cw 1.9 μm laser emission from the Ti : sapphire laser pumped Tm 3+ : NaGd(MoO 4 ) 2 crystal has been demonstrated. The maximum output power of 170 mW has been achieved with a slope efficiency of 25%

  13. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati; Shahid, Muhammad; Chen, Wei; Hedhili, Mohamed N.; Reuter, Mark C.; Ross, Frances M.; Alshareef, Husam N.

    2014-01-01

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery

  14. Thermal properties of KUO3(s) and K2U2O7 - by high temperature Calvet calorimeter

    International Nuclear Information System (INIS)

    Jayanthi, K.; Iyer, V.S.; Venugopal, V.

    1998-01-01

    The thermal properties of KUO 3 (s) and K 2 U 2 O 7 (s) were determined using a high temperature Calvet calorimeter by drop method. The enthalpy increments, (H T o - H 298.15 0 ), in kJ/mol for KUO 3 (s) and K 2 U 2 O 7 (s) can be represented by, H T o - H 298.15 0 KUO 3 (s) kJ/mol ± 0.7 = -39.15 + 0.129T + 0.1005x10 -4 T 2 (369-714K) and H T o -H 298.15 0 K 2 U 2 O 7 (s) kJ/mol ± 0.7 = -52.99 + 0.1361T + 0.146x10 -3 T 2 (391 - 683K). (author)

  15. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

    International Nuclear Information System (INIS)

    Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

    2005-01-01

    Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

  16. Influence of annealing temperature on structural and optical properties of SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] powder

    Energy Technology Data Exchange (ETDEWEB)

    Ahlawat, Rachna, E-mail: rachnaahlawat2003@yahoo.com

    2015-07-25

    Highlights: • Sol–gel process is used to obtain spherical nanocrystallites of SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] powder. • Effect of four steps annealing is studied on micro strain, nanocrystallite size and dislocation density. • Optical properties are examined by absorption spectra and PL. • SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] binary oxides are promising materials for high temperature structural applications. - Abstract: SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] powder were prepared by wet chemical technique and the prepared binary oxides annealed at 500 °C and 900 °C. The crystalline structure, phase transformation, and surface morphologies of as-prepared and annealed samples were investigated by XRD and TEM. The normal transmission was measured using FTIR spectroscopy. Optical properties have been studied with UV–Vis spectroscopy and PL study. XRD results shows that the as prepared samples of SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] powder has mixed phases of RE(NO{sub 3}){sub 3} and Si(OH){sub 3}. However, cubic rare earth oxide phase alone is found for annealed samples. The strain values are calculated from W–H plot for annealed samples. TEM micrograph shows that the samples are composed of individual spherical nanocrystallites at 500 °C and aggregated nanocrystallites at 900 °C. From the UV–Vis spectra, it is found that the position of the absorption peak is shifted toward the higher wavelength side when annealing temperature is increased. In the PL spectra, the broad emission bands are observed between 570–600 nm and the presence of O–Si–O (silica) and metal oxide is confirmed by FTIR spectra.

  17. Effects of the co-addition of LiSbO3-LiTaO3 on the densification of (Na1/2K1/2)NbO3 lead free ceramics by atmosphere sintering

    International Nuclear Information System (INIS)

    Jiang Na; Fang Bijun; Wu Jian; Du Qingbo

    2011-01-01

    Research highlights: → This manuscript shows a synthesis method that can easily obtain excellent lead-free samples, which is valuable for industrial production. → Pure phase perovskite 0.94(Na 1/2 K 1/2 )NbO 3 -0.03LiSbO 3 -0.03LiTaO 3 (0.94NKN-0.03LS-0.03LT) lead-free piezoelectric ceramics with high relative density, being 94.73%, and excellent integral electrical properties, piezoelectric constant d 33 being 228 pC/N, were prepared by atmosphere sintering method. Which can be attributed to the co-doping of LiSbO 3 -LiTaO 3 . - Abstract: Pure phase perovskite 0.94(Na 1/2 K 1/2 )NbO 3 -0.03LiSbO 3 -0.03LiTaO 3 (0.94NKN-0.03LS-0.03LT) lead-free piezoelectric ceramics were prepared by the conventional solid-state reaction method. Due to the co-addition of LiSbO 3 -LiTaO 3 , the 0.94NKN-0.03LS-0.03LT ceramics prepared by atmosphere sintering at 1040 deg. C exhibit high relative density, being 94.73%, and rather homogenous microstructure. X-ray diffraction (XRD) measurement confirmed that the sintered ceramics exhibit pure tetragonal perovskite structure. The 0.94NKN-0.03LS-0.03LT ceramics exhibit excellent integral electrical properties, in which the value of piezoelectric constant d 33 is 228 pC/N, the electromechanical coupling factors K p and K t are 0.220 and 0.230, respectively, the mechanical quality factor Q m is 32.19, and the remnant polarization P r is 23.06 μC/cm 2 . Such excellent electrical properties are considered as correlating with the high relative density of the synthesized ceramics induced by the co-doping of LiSbO 3 -LiTaO 3 .

  18. Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y. [Department of Physics, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501 (Japan)

    2014-02-20

    SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  19. Enhanced coercivity in Co-doped α-Fe2O3 cubic nanocrystal assemblies prepared via a magnetic field-assisted hydrothermal synthesis

    Directory of Open Access Journals (Sweden)

    Kinjal Gandha

    2017-05-01

    Full Text Available Ferromagnetic Co-doped α-Fe2O3 cubic shaped nanocrystal assemblies (NAs with a high coercivity of 5.5 kOe have been synthesized via a magnetic field (2 kOe assisted hydrothermal process. The X-ray diffraction pattern and Raman spectra of α-Fe2O3 and Co-doped α-Fe2O3 NAs confirms the formation of single-phase α-Fe2O3 with a rhombohedral crystal structure. Electron microscopy analysis depict that the Co-doped α-Fe2O3 NAs synthesized under the influence of the magnetic field are consist of aggregated nanocrystals (∼30 nm and of average assembly size 2 μm. In contrast to the NAs synthesized with no magnetic field, the average NAs size and coercivity of the Co-doped α-Fe2O3 NAs prepared with magnetic field is increased by 1 μm and 1.4 kOe, respectively. The enhanced coercivity could be related to the well-known spin–orbit coupling strength of Co2+ cations and the redistribution of the cations. The size increment indicates that the small ferromagnetic nanocrystals assemble into cubic NAs with increased size in the magnetic field that also lead to the enhanced coercivity.

  20. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

    International Nuclear Information System (INIS)

    Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

    2006-01-01

    To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

  1. Enhancement of the chemical stability in confined δ-Bi2O3

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Andreasen, Jens Wenzel

    2015-01-01

    Bismuth-oxide-based materials are the building blocks for modern ferroelectrics1, multiferroics2, gas sensors3, light photocatalysts4 and fuel cells5,6. Although the cubic fluorite δ-phase of bismuth oxide (δ-Bi2O3) exhibits the highest conductivity of known solid-state oxygen ion conductors5, its...... instability prevents use at low temperature7–10. Here we demonstrate the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers of Er2O3-stabilized δ-Bi2O3 and Gd2O3-doped CeO2. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles...

  2. Preparation and study of the critical-mass-free plutonium ceramics with neutron poisons Hf, Gd and Li

    International Nuclear Information System (INIS)

    Timoefeeva, L.F.; Orlov, V.K.; Malyukov, E.E.; Molomin, V.I.; Zhmak, V.A.; Semova, E.A.; Shishkov, N.V.; Nadykto, B.A.

    2002-01-01

    Powder sintering was used to produce homogeneous type oxide ceramics of Pu with Hf, Gd and Li 6 . In all the ceramics, there is the number of neutron poison (Hf, Gd and Li) atoms per plutonium atom needed, according to the physical calculation, for them to be free of critical mass. PuO 2 stabilizers high-temperature modifications of cubic HfO 2 or hexagonal Gd 2 O 3 , however, at the ratio given by the physical calculation, the plutonium is insufficient for their full stabilization. Addition of yttrium oxide as an additive stabilizing the fcc phase of HfO 2 resulted in cubic solid solution (Pu, Hf, Y)O 2-x . Pu/Li/Hf and Pu/Li/Si ceramics produced by sintering of PuO 2 and compound Li 2 HfO 3 or 6 Li 4 SiO 4 powders is characterized with presence of two phases. The method of differential thermal analysis demonstrated the phase stability of (Pu-Hf, Pu-Gd, Pu-Li-Hf) oxide ceramics in the 20-1500degC temperature range. Ceramic (Pu/Li/Si) has several endothermal effects. Tests in boiling water solutions of various composition suggest that the specimens of Pu, Hf oxides and ternary oxides (Pu, Hf, Y)O 2 are less stable in weakly acidic media than in weakly alkaline medium and distilled water. The obtained results were used as a basis to estimate the assumed solid solution region boundaries for binary Hf, Pu and ternary Hf, Pu, Y oxides on the side of HfO 2 . (author)

  3. Phase Composition and Long-Term Conductivity of Acceptor Doped Ce(PO3)4 and CeP2O7 with Variable P/Metal Ratio and of CeP2O7-KH2PO4 Composite

    DEFF Research Database (Denmark)

    Chatzichristodoulou, Christodoulos; Hallinder, Jonathan; Lapina, Alberto

    2013-01-01

    The thermal evolution of the phase composition of CeP2O7 and Ce(PO3)4 with 10 mol% Y and Gd doping, respectively, was examined by in-situ powder X-ray diffraction and thermogravimetry with in-line mass spectroscopy. The phase composition depends critically on the P to metal ratio, the annealing...... temperature, humidity and time. CeP2O7 and Ce(PO3)4 were completely decomposed to CePO4 following a 1100 h long conductivity test at 155°C. The conductivity of 10 mol% Gd doped Ce(PO3)4 (synthesized with P:(Ce + Gd) = 5.0) reaches a value of 6.4·10−2 S·cm−1 at 150°C under wet conditions (pH2O = 0.2 atm...

  4. Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

    Directory of Open Access Journals (Sweden)

    Suvarna R. Bathe

    2014-01-01

    Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

  5. Optical properties and radiation response of Ce{sup 3+}-doped GdScO{sub 3} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kochurikhin, Vladimir [General Physics Institute, 38 Vavilov Str., 119991 Moscow (Russian Federation); Yanagida, Takayuki [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yoshikawa, Akira [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2012-12-15

    10%-Ce doped GdScO{sub 3} perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO{sub 3} crystal showed photo- and radio-luminescence peaks due to Ce{sup 3+} of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Synthesis of High Crystalline Al-Doped ZnO Nanopowders from Al2O3 and ZnO by Radio-Frequency Thermal Plasma

    Directory of Open Access Journals (Sweden)

    Min-Kyeong Song

    2015-01-01

    Full Text Available High crystalline Al-doped ZnO (AZO nanopowders were prepared by in-flight treatment of ZnO and Al2O3 in Radio-Frequency (RF thermal plasma. Micron-sized (~1 μm ZnO and Al2O3 powders were mixed at Al/Zn ratios of 3.3 and 6.7 at.% and then injected into the RF thermal plasma torch along the centerline at a feeding rate of 6.6 g/min. The RF thermal plasma torch system was operated at the plate power level of ~140 kVA to evaporate the mixture oxides and the resultant vapor species were condensed into solid particles by the high flow rate of quenching gas (~7000 slpm. The FE-SEM images of the as-treated powders showed that the multipod shaped and the whisker type nanoparticles were mainly synthesized. In addition, these nanocrystalline structures were confirmed as the single phase AZO nanopowders with the hexagonal wurtzite ZnO structure by the XRD patterns and FE-TEM results with the SAED image. However, the composition changes of 0.3 and 1.0 at.% were checked for the as-synthesized AZO nanopowders at Al/Zn ratios of 3.3 and 6.7 at.%, respectively, by the XRF data, which can require the adjustment of Al/Zn in the mixture precursors for the applications of high Al doping concentrations.

  7. Enhancement of Dielectric Breakdown Strength and Energy Conversion Efficiency of Niobate Glass-Ceramics by Sc2O3 Doping

    Science.gov (United States)

    Xiao, Shi; Xiu, Shaomei; Yang, Ke; Shen, Bo; Zhai, Jiwei

    2018-01-01

    Niobate glass-ceramics K2O-SrO-Nb2O5-B2O3-Al2O3-SiO2 (KSN-BAS) doped with different amounts of Sc2O3 have been prepared through a melt quenching/controlled crystallization method, and the influence of the Sc2O3 content on their phase composition, microstructure, dielectric performance, and charge-discharge properties investigated. X-ray powder diffraction results showed that the peak positions of the KSr2Nb5O15 phase shifted to higher angle and the glass-ceramic microstructures were significantly improved by Sc2O3 addition. Based on these results, 0.5 mol.% Sc2O3 doping was found to achieve remarkable enhancement in energy storage density, which reached 9.63 ± 0.39 J/cm3 at dielectric breakdown strength of 1450.38 ± 29.01 kV/cm with high conversion efficiency of ˜ 92.1%. For pulsed power applications, discharge speed of 17 ns and power density of 0.48 MW/cm3 were obtained in the glass-ceramic with 0.5 mol.% Sc2O3. These results could provide a new design strategy for high-performance dielectric capacitors.

  8. Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions

    Science.gov (United States)

    Na, So-Yeong; Kim, Yeo-Myeong; Yoon, Da-Jeong; Yoon, Sung-Min

    2017-12-01

    The effects of atomic layer deposition (ALD) conditions for the HfO2 gate insulators (GI) on the device characteristics of the InGaZnO (IGZO) thin film transistors (TFTs) were investigated when the ALD temperature and Hf precursor purge time were varied to 200, 225, and 250 °C, and 15 and 30 s, respectively. The HfO2 thin films showed low leakage current density of 10-8 A cm-2, high dielectric constant of over 20, and smooth surface roughness at all ALD conditions. The IGZO TFTs using the HfO2 GIs showed good device characteristics such as a saturation mobility as high as 11 cm2 V-1 s-1, a subthreshold swing as low as 0.10 V/dec, and all the devices could be operated at a gate voltage as low as  ±3 V. While there were no marked differences in transfer characteristics and PBS stabilities among the fabricated devices, the NBIS instabilities could be improved by increasing the ALD temperature for the formation of HfO2 GIs by reducing the oxygen vacancies within the IGZO channel.

  9. Crystal structure and band gap determination of HfO2 thin films

    NARCIS (Netherlands)

    Cheynet, M.C.; Pokrant, S.; Tichelaar, F.D.; Rouvière, J.L.

    2007-01-01

    Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by

  10. EPR study of Gd sup 3 sup + centres in Tl sub 2 ZnF sub 4 crystals

    CERN Document Server

    Arakawa, M; Ebisu, H; Takeuchi, H

    2003-01-01

    EPR measurements have been made at room temperature on Tl sub 2 ZnF sub 4 crystals doped with Gd sup 3 sup + and co-doped with Gd sup 3 sup + and Li sup +. For crystals doped only with Gd sup 3 sup + , a spectrum with tetragonal symmetry (A centre) is observed. For co-doped crystals new spectra with tetragonal (B centre) and monoclinic (C centre) symmetries are observed in place of the spectrum of the A centre. The A centre is identified as the substitutional Gd sup 3 sup + ion at a Zn sup 2 sup + site in six-fold coordination without any local charge compensation in its immediate neighbourhood. On the basis of spin Hamiltonian separation analysis, the separated parameter b sub 2 sub a sub ( sub 1 sub ) for the C centre has a value close to the b sub 2 sup 0 parameter for the B centre. The B and C centres in co-doped crystals are ascribed to a Gd sup 3 sup + ion substituted for a Tl sup + site in nine-fold coordination, where the divalent excess positive charge on Gd sup 3 sup + is compensated by a Li sup + i...

  11. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

    Science.gov (United States)

    Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

    2014-03-26

    We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

  12. Optical spectroscopy of rare earth ion-doped TiO2 nanophosphors.

    Science.gov (United States)

    Chen, Xueyuan; Luo, Wenqin

    2010-03-01

    Trivalent rare-earth (RE3+) ion-doped TiO2 nanophosphors belong to one kind of novel optical materials and have attracted increasing attention. The luminescence properties of different RE3+ ions in various TiO2 nanomaterials have been reviewed. Much attention is paid to our recent progresses on the luminescence properties of RE3+ (RE = Eu, Er, Sm, Nd) ions in anatase TiO2 nanoparticles prepared by a sol-gel-solvothermal method. Using Eu3+ as a sensitive optical probe, three significantly different luminescence centers of Eu3+ in TiO2 nanoparticles were detected by means of site-selective spectroscopy at 10 K. Based on the crystal-field (CF) splitting of Eu3+ at each site, C2v and D2 symmetries were proposed for Eu3+ incorporated at two lattice sites. A structural model for the formation of multiple sites was proposed based on the optical behaviors of Eu3+ at different sites. Similar multi-site luminescence was observed in Sm(3+)- or Nd(3+)-doped TiO2 nanoparticles. In Eu(3+)-doped TiO2 nanoparticles, only weak energy transfer from the TiO2 host to the Eu3+ ions was observed at 10 K due to the mismatch of energy between the TiO2 band-gap and the Eu3+ excited states. On the contrary, efficient host-sensitized luminescences were realized in Sm(3+)- or Nd(3+)-doped anatase TiO2 nanoparticles due to the match of energy between TiO2 band-gap and the Sm3+ and Nd3+ excited states. The excitation spectra of both Sm(3+)- and Nd(3+)-doped samples exhibit a dominant broad peak centered at approximately 340 nm, which is associated with the band-gap of TiO2, indicating that sensitized emission is much more efficient than direct excitation of the Sm3+ and Nd3+ ions. Single lattice site emission of Er3+ in TiO2 nanocrystals can be achieved by modifying the experimental conditions. Upon excitation by a Ti: sapphire laser at 978 nm, intense green upconverted luminescence was observed. The characteristic emission of Er3+ ions was obtained both in the ultraviolet-visible (UV-vis) and

  13. Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions

    Science.gov (United States)

    Pringle, Spencer Allen

    HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-generation digital non-volatile memory and as synapse devices in braininspired logic systems, owing to their higher reliability compared to filamentary resistive random-access memory (ReRAM) and higher speed and lower power consumption compared to competing devices, including phase-change memory (PCM) and state-of-the-art FTJ. Ferroelectrics are often easier to deposit and have simpler material structure than films for magnetic tunnel junctions (MTJs). Ferroelectric HfO2 also enables complementary metal-oxide-semiconductor (CMOS) compatibility, since lead zirconate titanate (PZT) and BaTiO3-based FTJs often are not. No other groups have yet demonstrated a HfO2-based FTJ (to best of the author's knowledge) or applied it to a suitable system. For such devices to be useful, system designers require models based on both theoretical physical analysis and experimental results of fabricated devices in order to confidently design control systems. Both the CMOS circuitry and FTJs must then be designed in layout and fabricated on the same die. This work includes modeling of proposed device structures using a custom python script, which calculates theoretical potential barrier heights as a function of material properties and corresponding current densities (ranging from 8x103 to 3x10-2 A/cm 2 with RHRS/RLRS ranging from 5x105 to 6, depending on ferroelectric thickness). These equations were then combined with polynomial fits of experimental timing data and implemented in a Verilog-A behavioral analog model in Cadence Virtuoso. The author proposes tristate CMOS control systems, and circuits, for implementation of FTJ devices as digital memory and presents simulated performance. Finally, a process flow for fabrication of FTJ devices with CMOS is presented. This work has therefore enabled the fabrication of FTJ devices at RIT and the continued investigation of them as applied to any

  14. Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

    Science.gov (United States)

    Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

    2017-12-01

    Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

  15. Ionic conductivity of Ca and Mg doped NdGdZr1.95Sc0.05O7

    International Nuclear Information System (INIS)

    Anithakumari, P.; Mandal, B.P.; Grover, V.; Tyagi, A.K.; Mishra, A.K.

    2014-01-01

    The ionic conductivity of pyrochlore based materials makes them promising candidates for fuel-cell applications where high ionic conductivity and low activation energy are desired. Earlier it has been reported that 5%Sc doped GdNdZr 2 O 7 shows highest ionic conductivity. In this present work, an attempt has been made to further increase the oxygen vacancy concentration by the incorporation of Ca 2+ and Mg 2+ ions at A site of NdGdZr 1.95 Sc 0.05 O 7 (NGZS)

  16. Strong enhancement of the upconversion emission in ZrO{sub 2}: Yb{sup 3+}, Er{sup 3+}, Gd{sup 3+} nanocubes synthesized with Na{sub 2}S

    Energy Technology Data Exchange (ETDEWEB)

    Urbina-Frías, Alejandra; López-Luke, Tzarara; Oliva, Jorge [Centro de Investigaciones en Óptica, A.P. 1-948, León, Guanajuato 37150 (Mexico); Salas, Pedro [Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, A.P. 1-1010, Querétaro 76000 (Mexico); Torres-Castro, Alejandro [Universidad Autónoma de Nuevo León, A.P. 126-F, Monterrey, NeNuevo Leon 66450 (Mexico); De la Rosa, Elder, E-mail: elder@cio.mx [Centro de Investigaciones en Óptica, A.P. 1-948, León, Guanajuato 37150 (Mexico)

    2016-04-15

    In this work, the structural, morphological and luminescent characterization of ZrO{sub 2}:Yb{sup 3+},Er{sup 3+}, Gd{sup 3+} nanocrystals prepared with Na{sub 2}S by precipitation method is reported. The XRD spectra showed a mixture of tetragonal (88%) and monoclinic phases (12%) in samples fabricated with and without Na{sub 2}S. The tetragonal phase (100%) was stabilized by the introduction of the Gd{sup 3+}. According to TEM images, samples showed a cubic morphology with an average size of 150 nm, when both, Na{sub 2}S and Gd{sup 3+} were added. Red (678 nm), green (545 nm) and ultraviolet (275, 285 nm) emissions were obtained as a result of the upconversion process due to the energy transfer between Yb{sup 3+}–Er{sup 3+}–Gd{sup 3+} ions, under 970 nm of excitation. The integrated red band showed an increment of 40% and 125%, for samples prepared with Na{sub 2}S and combined with Gd{sup 3+}, respectively, compared to the ZrO{sub 2}:Yb{sup 3+}–Er{sup 3+} sample. Such increments are explained in terms of the surface pasivation by using Na{sub 2}S during the synthesis process and the role of Gd{sup 3+} as a reservoir of energy from Er{sup 3+}. - Highlights: • ZrO{sub 2}:Yb,Er nanoparticles were synthesized by a precipitation method. • ZrO{sub 2}:Yb,Er nanoparticles were prepared with Na{sub 2}S and sensitized with Gd{sup 3+}. • An increment of 40% in luminescence occurred in samples prepared with Na{sub 2}S. • An increment of 125% were obtained by the synergistic effect between Na{sub 2}S and Gd3{sup +}.

  17. Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage

    Science.gov (United States)

    Shi, K. X.; Xu, H. Y.; Wang, Z. Q.; Zhao, X. N.; Liu, W. Z.; Ma, J. G.; Liu, Y. C.

    2017-11-01

    Resistive-switching memory with ultralow-power consumption is very promising technology for next-generation data storage and high-energy-efficiency neurosynaptic chips. Herein, Ta2O5-x-based multilevel memories with ultralow-power consumption and good data retention were achieved by simple Gd-doping. The introduction of a Gd ion, as an oxygen trapper, not only suppresses the generation of oxygen vacancy defects and greatly increases the Ta2O5-x resistance but also increases the oxygen-ion migration barrier. As a result, the memory cells can operate at an ultralow current of 1 μA with the extrapolated retention time of >10 years at 85 °C and the high switching speeds of 10 ns/40 ns for SET/RESET processes. The energy consumption of the device is as low as 60 fJ/bit, which is comparable to emerging ultralow-energy consumption (memory devices.

  18. Systematic study of photoluminescence upon band gap excitation in perovskite-type titanates R 1/2Na1/2TiO3:Pr (R=La, Gd, Lu, and Y)

    International Nuclear Information System (INIS)

    Inaguma, Yoshiyuki; Tsuchiya, Takeshi; Katsumata, Tetsuhiro

    2007-01-01

    Pr 3+ -doped perovskites R 1/2 Na 1/2 TiO 3 :Pr (R=La, Gd, Lu, and Y) were synthesized, and their structures, optical absorption and luminescent properties were investigated, and the relationship between structures and optical properties are discussed. Optical band gap of R 1/2 Na 1/2 TiO 3 increases in the order R=La, Gd, Y, and Lu, which is primarily due to a decrease in band width accompanied by a decrease in Ti-O-Ti bond angle. Intense red emission assigned to f-f transition of Pr 3+ from the excited 1 D 2 level to the ground 3 H 4 state upon the band gap photo-excitation (UV) was observed for all compounds. The wavelength of emission peaks was red-shifted in the order R=La, Gd, Y, and Lu, which originates from the increase in crystal field splitting of Pr 3+ . This is attributed to the decrease in inter-atomic distances of Pr-O together with the inter-atomic distances (R, Na)-O, i.e., increase in covalency between Pr and O. The results indicate that the luminescent properties in R 1/2 Na 1/2 TiO 3 :Pr are governed by the relative energy level between the ground and excited state of 4f 2 for Pr 3+ , and the conduction and valence band, which is primarily dependent on the structure, e.g., the tilt of TiO 6 octahedra and the Pr-Ti inter-atomic distance and the site symmetry of Pr ion. - Graphical abstract: The red intense emission assigned to f-f transition of Pr 3+ from the excited 1 D 2 level to the ground 3 H 4 state upon the band gap photo-excitation (UV) was observed upon the band gap photo-excitation in perovskites R 1/2 Na 1/2 TiO 3 :Pr(R=La, Gd, Lu, and Y). It was found that the systematic changes in their luminescent properties are strongly dependent on the structure

  19. Er3+-Al2O3 nanoparticles doping of borosilicate glass

    International Nuclear Information System (INIS)

    Massera, Jonathan; Petit, Laeticia; Hupa, Leena; Hupa, Mikko; Koponen, Joona; Glorieux, Benoit

    2015-01-01

    Novel borosilicate glasses were developed by adding in the glass batch Er 3+ -Al 2 O 3 nanoparticles synthetized by using a soft chemical method. A similar nanoparticle doping with modified chemical vapour deposition (MCVD) process was developed to increase the efficiency of the amplifying silica fibre in comparison to using MCVD and solution doping. It was shown that with the melt quench technique, a Er 3+ -Al 2 O 3 nanoparticle doping neither leads to an increase in the Er 3+ luminescence properties nor allows one to control the rare-earth chemical environment in a borosilicate glass. The site of Er 3+ in the Er 3+ -Al 2 O 3 nanoparticle containing glass seems to be similar as in glasses with the same composition prepared using standard raw materials. We suspect the Er 3+ ions to diffuse from the nanoparticles into the glass matrix. There was no clear evidence of the presence of Al 2 O 3 nanoparticles in the glasses after melting. (author)

  20. Optical characterization of Tm3+ doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2

    Science.gov (United States)

    Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

    2016-01-01

    In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd–Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm3+ ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH− absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10−21 cm2) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm3+: 4F3 → 3H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation (3H6 + 3H4 → 3F4 + 3F4) rate. Our results suggest that the Tm3+ doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system. PMID:27506152

  1. Optical characterization of Tm(3+) doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2.

    Science.gov (United States)

    Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

    2016-08-10

    In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd-Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm(3+) ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH(-) absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10(-21) cm(2)) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm(3+): (4)F3 → (3)H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation ((3)H6 + (3)H4 → (3)F4 + (3)F4) rate. Our results suggest that the Tm(3+) doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system.

  2. Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Yong-Qing; Chang, Chia-Wei; Yao, Chih-Kai; Liao, Jiunn-Der

    2013-01-01

    10-nm-thick atomic layer deposited HfO 2 films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi x O y induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi x O y with increasing annealing temperatures. The existence of HfSi x O y broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi x O y induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO 2 films were assessed by nano-scratch and indentation. ► Scratch depth of HfO 2 films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO 2 films increased with the increase of annealing temperatures

  3. Eu3+-doped β-Ga2O3 nanophosphors: annealing effect, electronic structure and optical spectroscopy.

    Science.gov (United States)

    Zhu, Haomiao; Li, Renfu; Luo, Wenqin; Chen, Xueyuan

    2011-03-14

    A comprehensive survey of electronic structure and optical properties of rare-earth ions-doped semiconductor is of vital importance for their potential applications. In this work, Eu(3+)-doped β-Ga(2)O(3) nanocrystals were synthesized via a combustion method. The evolution of the optical properties of nanophosphors with increasing the annealing temperature was investigated in detail by means of excitation and emission spectra at room temperature and 10 K. Eu(3+) ions were proved to be incorporated into the crystal lattice of the β-Ga(2)O(3) phase after annealing the as-prepared nanoparticles at 1100 °C. It was observed that the substitution of Eu(3+) for Ga(3+) occurred at merely single site, in spite of two crystallographically nonequivalent sites of Ga(3+) in β-Ga(2)O(3). Spectroscopic evidence corroborated and clarified the local symmetry of C(s) for Eu(3+) at this single site. From the high-resolution excitation and emission spectra, 71 crystal-field levels of Eu(3+) in β-Ga(2)O(3) were identified and analyzed in terms of 19 freely varied free-ions and crystal-field parameters based on C(s) symmetry. The standard deviation of the final fitting is as low as 12.9 cm(-1), indicating an excellent agreement between experimental and calculated energy levels. The temperature-dependent luminescence dynamics of the (5)D(0) multiplet for Eu(3+) in β-Ga(2)O(3) phosphors has also been revealed for the first time from 10 to 300 K.

  4. Spontaneous polarization and pyroelectric effect in improper ferroelectrics-ferroelastics Gd2(MoO4)3 and Tb2(MoO4)3 at low temperature

    International Nuclear Information System (INIS)

    Matyjasik, S; Shaldin, Yu.V.

    2013-01-01

    Experimental dependencies for spontaneous polarization ΔP s (T) and pyroelectric coefficient γ s (T)for Gd 2 (MoO 4 ) 3 (GMO) and Tb 2 (MoO 4 ) 3 (TMO) reported here differs from those for intrinsic ferroelectrics. We found fundamental distinction in GMO and TMO samples behavior at their repolarization at the fixed temperatures 300 and 4.2 K. In TMO monodomainization temperature does not affect experimental data, while in GMO monodomainization at 4.2 K results in increase of ΔP s (T) by order of magnitude at 85 K and γ s (T) dependence shows well-defined anomalies, reaching a record magnitude of 3 centre dot 10 -4 C/(m 2 centre dot K) at T = 25 K. At T = 200 K the pyroelectric coefficients values are -1.45 centre dot 10 -6 C/(m 2 centre dot K) and-1.8 centre dot 10 -6 C/(m 2 centre dot K). Taking into account our data, results related to transformation of structure in (001) plane and symmetry reasons we suggested crystallographic model of GMO type improper ferroelectric. It is formed by four meso-tetrahedrons constructed of three coordination tetrahedrons MO 4 (a, b and c types). In the framework of this model we discuss the physical meaning of pseudodeviator Q 12 *, coefficient, that initiate the phase transition at T > 433 K from noncentrosymmetric phase (mm2) to another one (4-bar2m).

  5. Synthesis and magnetic properties of CoFe2O4 spinel ferrite nanoparticles doped with lanthanide ions

    International Nuclear Information System (INIS)

    Kahn, Myrtil L.; Zhang, Z. John

    2001-01-01

    Lanthanide ions have been doped into cobalt spinel ferrites using an oil-in-water micellar method to form CoLn 0.12 Fe 1.88 O 4 nanoparticles with Ln=Ce, Sm, Eu, Gd, Dy, or Er. Doping with lanthanide ions (Ln III ) modulates the magnetic properties of cobalt spinel ferrite nanoparticles. In particular cases of Gd 3+ or Dy 3+ ions, a dramatic increase in the blocking temperature and coercivity is observed. Indeed, the introduction of only 4% of Gd 3+ ions increases the blocking temperature ∼100 K and the coercivity 60%. Initial studies on the magnetic properties of these doped nanoparticles clearly demonstrate that the relationship between the modulation of magnetic properties and the nature of doped Ln III ions is interesting but very complex. [copyright] 2001 American Institute of Physics

  6. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

    Science.gov (United States)

    Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

    2014-11-01

    In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

  7. Effect of Silver Doping on the TiO2 for Photocatalytic Reduction of CO2

    Czech Academy of Sciences Publication Activity Database

    Kočí, K.; Matějů, K.; Obalová, L.; Krejčíková, Simona; Lacný, Z.; Plachá, D.; Čapek, L.; Hospodková, Alice; Šolcová, Olga

    2010-01-01

    Roč. 96, 3-4 (2010), s. 239-244 ISSN 0926-3373 R&D Projects: GA ČR GD203/08/H032 Institutional research plan: CEZ:AV0Z40720504; CEZ:AV0Z10100521 Keywords : Ag doping * TiO2 * photocatalysis Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.749, year: 2010

  8. Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films

    International Nuclear Information System (INIS)

    Vendrell, X.; Raymond, O.; Ochoa, D.A.; García, J.E.; Mestres, L.

    2015-01-01

    Lead-free (K,Na)NbO 3 (KNN) and La doped (K,Na)NbO 3 (KNN-La) thin films are grown on SrTiO 3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0–20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K 4 Nb 6 O 17 , as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80–380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. - Highlights: • (K 0.5 Na 0.5 )NbO 3 and [(K 0.5 Na 0.5 ) 0.985 La 0.005 ]NbO 3 thin films have been prepared. • The obtained thin films show an excellent (100) preferred orientation. • Doping with lanthanum results in a decrease of the leakage current density. • The dielectric properties are enhanced when doping with lanthanum

  9. High Ic, YBa2Cu3O7-x films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO3 buffers

    International Nuclear Information System (INIS)

    Kursumovic, A; Durrell, J H; Harrington, S; Wimbush, S; MacManus-Driscoll, J L; Maiorov, B; Zhou, H; Stan, L; Holesinger, T G; Wang, H

    2009-01-01

    YBa 2 Cu 3 O 7-x (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO 3 (STO) substrates. In the presence of a 100 nm thick, 5 mol% Au-doped STO buffer, self-field critical current densities, J c sf , at 77 K of ∼2.4 MA cm -2 and critical currents, I c sf , up to 700 A (cm-width) -1 were achieved. The J c value is virtually independent of thickness and the growth rates are very high (∼1 μm min -1 ). From transmission electron microscopy (TEM), Y 2 O 3 nanocloud extended defects (∼100 nm in size) were identified as the pinning defects in the films. Enhanced random pinning was induced by the presence of Au in the buffer.

  10. Electrical characteristics of hybrid detector based Gd2O2S:Tb-Selenium for digital radiation imaging

    International Nuclear Information System (INIS)

    Kang, Sang-Sik; Park, Ji-Koon; Choi, Jang-Yong; Cha, Byung-Yul; Cho, Sung-Ho; Nam, Sang-Hee

    2005-01-01

    Fine Gd 2 O 2 S:Tb powders were synthesized by using a solution-combustion method for a high-resolution digital X-ray imaging detector. The PL spectrum showed that the phosphor was fully crystallized and that the Tb 3+ ions substituted well for the Gd 3+ sites. To investigate the X-ray response of the phosphor, a uniform Gd 2 O 2 S:Tb film was grown using a screen-printing method. The X-ray sensitivities of the 100 μm-Gd 2 O 2 S:Tb/30 μm -Se and 200 μm -Se detector were 470 and 420 pC/cm 2 /mR, respectively, at an electric field of 10 V/μm. The results of the study suggest that the hybrid detector has a significant potential in the application of digital radiography and fluoroscopy systems

  11. UV-laser-light-controlled photoluminescence of metal oxide nanoparticles in different gas atmospheres: BaTiO3, SrTiO3 and HfO2

    International Nuclear Information System (INIS)

    Mochizuki, Shosuke; Saito, Takashi; Yoshida, Kaori

    2012-01-01

    The photoluminescence (PL) enhancement has been studied at room temperature using various specimen atmospheres (O 2 gas, CO 2 gas, CO 2 -H 2 mixture gas, Ar-H 2 mixture gas and vacuum) under 325 nm laser light irradiation on various metal oxides. Of them, the results obtained for BaTiO 3 nanocrystals, SrTiO 3 ones and HfO 2 powder crystal are given in the present paper. Their PL were considerably increased in intensity by irradiation of 325 nm laser light in CO 2 gas and CO 2 -H 2 mixture gas. The cause of the PL intensity enhancements is discussed in the light of the exciton theory, the defect chemistry and the photocatalytic theory. The results may be applied for the utilization of greenhouse gas (CO 2 ) and the optical sensor for CO 2 gas.

  12. The effect of rare earth dopants on the structure, surface texture and photocatalytic properties of TiO2-SiO2 prepared by sol-gel method

    International Nuclear Information System (INIS)

    Mohamed, R.M.; Mkhalid, I.A.

    2010-01-01

    The sol-gel method was successfully used to prepare a series of TiO 2 -SiO 2 and rare earth (RE) (La 3+ , Nd 3+ , Sm 3+ , Gd 3+ )-doped TiO 2 -SiO 2 nanoparticles at a doping level of 3 atomic percent. The structural features of parent TiO 2 -SiO 2 and RE-TiO 2 -SiO 2 fired at 550 o C have been investigated by XRD, UV-diffuse reflection, SEM and nitrogen adsorption measurements at -196 o C. XRD data verified the formation of typical characteristic anatase form in all the prepared RE-doped TiO 2 -SiO 2 samples. In comparison with the pure TiO 2 -SiO 2 samples (ca. 35 nm in diameter), the RE-TiO 2 -SiO 2 samples have relatively small particle size indicating that the doping with RE metal ions can improve the particle morphology, and retard the grain growth of TiO 2 -SiO 2 during heat treatment. The results indicated that Gd 3+ doped TiO 2 -SiO 2 has the lowest bandgap and particle size compared with pure TiO 2 -SiO 2 and other nanoparticles of RE-doped TiO 2 -SiO 2 . The highest surface area (S BET ) and pore volume (V p ) values were recorded for Gd-TiO 2 -SiO 2 as well. The effect of doping on the photoactivity was evaluated by the photocatalytic degradation of EDTA as a probe reaction. Among all the pure and RE-doped TiO 2 -SiO 2 , Gd 3+ -TiO 2 -SiO 2 performed the highest catalytic activity towards the tested reaction. That might be due to its special characteristics of particle size, surface texture and bandgap properties. Details of the synthesis procedure and results of the characterization studies of the produced RE-TiO 2 -SiO 2 are presented in this paper.

  13. High-pressure versus isoelectronic doping effect on the honeycomb iridate Na2IrO3

    Science.gov (United States)

    Hermann, V.; Ebad-Allah, J.; Freund, F.; Pietsch, I. M.; Jesche, A.; Tsirlin, A. A.; Deisenhofer, J.; Hanfland, M.; Gegenwart, P.; Kuntscher, C. A.

    2017-11-01

    We study the effect of isoelectronic doping and external pressure in tuning the ground state of the honeycomb iridate Na2IrO3 by combining optical spectroscopy with synchrotron x-ray diffraction measurements on single crystals. The obtained optical conductivity of Na2IrO3 is discussed in terms of a Mott-insulating picture versus the formation of quasimolecular orbitals and in terms of Kitaev interactions. With increasing Li content x , (Na1 -xLix )2IrO3 moves deeper into the Mott-insulating regime, and there are indications that up to a doping level of 24% the compound comes closer to the Kitaev limit. The optical conductivity spectrum of single-crystalline α -Li2IrO3 does not follow the trends observed for the series up to x =0.24 . There are strong indications that α -Li2IrO3 is not as close to the Kitaev limit as Na2IrO3 and lies closer to the quasimolecular orbital picture instead. Except for the pressure-induced hardening of the phonon modes, the optical properties of Na2IrO3 seem to be robust against external pressure. Possible explanations of the unexpected evolution of the optical conductivity with isolectronic doping and the drastic change between x =0.24 and x =1 are given by comparing the pressure-induced changes of lattice parameters and the optical conductivity with the corresponding changes induced by doping.

  14. NaGd(MoO4)2 nanocrystals with diverse morphologies: controlled synthesis, growth mechanism, photoluminescence and thermometric properties.

    Science.gov (United States)

    Li, Anming; Xu, Dekang; Lin, Hao; Yang, Shenghong; Shao, Yuanzhi; Zhang, Yueli

    2016-08-10

    Pure tetragonal phase, uniform and well-crystallized sodium gadolinium molybdate (NaGd(MoO4)2) nanocrystals with diverse morphologies, e.g. nanocylinders, nanocubes and square nanoplates have been selectively synthesized via oleic acid-mediated hydrothermal method. The phase, structure, morphology and composition of the as-synthesized products are studied. Contents of both sodium molybdate and oleic acid of the precursor solutions are found to affect the morphologies of the products significantly, and oleic acid plays a key role in the morphology-controlled synthesis of NaGd(MoO4)2 nanocrystals with diverse morphologies. Growth mechanism of NaGd(MoO4)2 nanocrystals is proposed based on time-dependent morphology evolution and X-ray diffraction analysis. Morphology-dependent down-shifting photoluminescence properties of NaGd(MoO4)2: Eu(3+) nanocrystals, and upconversion photoluminescence properties of NaGd(MoO4)2: Yb(3+)/Er(3+) and Yb(3+)/Tm(3+) nanoplates are investigated in detail. Charge transfer band in the down-shifting excitation spectra shows a slight blue-shift, and the luminescence intensities and lifetimes of Eu(3+) are decreased gradually with the morphology of the nanocrystals varying from nanocubes to thin square nanoplates. Upconversion energy transfer mechanisms of NaGd(MoO4)2: Yb(3+)/Er(3+), Yb(3+)/Tm(3+) nanoplates are proposed based on the energy level scheme and power dependence of upconversion emissions. Thermometric properties of NaGd(MoO4)2: Yb(3+)/Er(3+) nanoplates are investigated, and the maximum sensitivity is determined to be 0.01333 K(-1) at 285 K.

  15. Electrical conductivity and chemical stability of BaCe0· 8− xAxGd0 ...

    Indian Academy of Sciences (India)

    ... K. BaCe0.7In0.1Gd0.2O3− and BaCe0.7Zr0.1Gd0.2O3− ceramics exhibit an excellent chemical stability against boiling water. Indium is a suitable doping element to promote the sintering densification and to enhance both electrical conductivity and chemical stability of Gd-doped BaCeO3 at operating temperatures.

  16. Combined effects of radiation damage and He accumulation on bubble nucleation in Gd{sub 2}Ti{sub 2}O{sub 7}

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Caitlin A., E-mail: ctayl105@vols.utk.edu [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Patel, Maulik K. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Aguiar, Jeffery A. [Fuel Performance and Design Department, Idaho National Laboratory, Idaho Falls, ID 83415-6188 (United States); Material Science Center, National Renewable Energy Laboratory, Golden, CO 80220 (United States); Zhang, Yanwen [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Crespillo, Miguel L. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Wen, Juan [School of Nuclear Science and Technology, Lanzhou University, Lanzhou, Gansu 730000 (China); Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Xue, Haizhou [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Wang, Yongqiang [Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Weber, William J. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2016-10-15

    Pyrochlores have long been considered as host phases for long-term immobilization of radioactive waste nuclides that would undergo α-decay for hundreds of thousands of years. This work utilizes ion-beam irradiations to examine the combined effects of radiation damage and He accumulation on bubble formation in Gd{sub 2}Ti{sub 2}O{sub 7} over relevant waste-form timescales. Helium bubbles are not observed in pre-damaged Gd{sub 2}Ti{sub 2}O{sub 7} implanted with 2 × 10{sup 16} He/cm{sup 2}, even after post-implantation irradiations with 7 MeV Au{sup 3+} at 300, 500, and 700 K. However, He bubbles with average diameters of 1.5 nm and 2.1 nm are observed in pre-damaged (amorphous) Gd{sub 2}Ti{sub 2}O{sub 7} and pristine Gd{sub 2}Ti{sub 2}O{sub 7}, respectively, after implantation of 2 × 10{sup 17} He/cm{sup 2}. The critical He concentration for bubble nucleation in Gd{sub 2}Ti{sub 2}O{sub 7} is estimated to be 6 at.% He. - Highlights: • He bubbles not formed in amorphous Gd{sub 2}Ti{sub 2}O{sub 7} implanted with 2 × 10{sup 16} He/cm{sup 2}, even after additional irradiation at 300 to 700 K. • He bubbles, 1.5 and 2.1 nm diameter, respectively, observed in amorphous and pristine Gd{sub 2}Ti{sub 2}O{sub 7} implanted to 2 × 10{sup 17} He/cm{sup 2}. • The critical He dose for bubble nucleation is estimated to be 6 at.% He.

  17. Nano-phases of ZrO2 doped with Y2O3

    International Nuclear Information System (INIS)

    Duteanu, Narcis; Monty, Claude

    2001-01-01

    This work reports the method of obtaining oxygen sensors by using nano-phases of ZrO 2 doped with Y 2 O 3 95% molar in thin layers. In the first phase it is necessary to prepare a substratum based on La 1-x Sr 30 MnO 3 . This substratum is obtained by grinding powders of base, followed by mixing and then by baking of the product. The nano-phases of ZrO 2 doped with Y 2 O 3 95% molar are obtained using solar energy in a solar furnace; in the focus the temperature has value of 3000 deg. C. Such temperatures are enough to realize the process of vapor condensation. The nano-phases obtained will have used in thin layers, representing the active element. This layers are obtained directly through the process of vapor condensation in solar focus or using the spray method. The goal of this work was obtaining oxygen sensors which function at low temperatures (below 300 deg. C), because the sensors which are found on market, operate at a temperature of 800 deg. C. Those sensors are used to obtain a good combustion with engines with internal combustion. (authors)

  18. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    Science.gov (United States)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  19. Photoluminescence properties of the Eu-doped alpha-Al2O3 microspheres

    International Nuclear Information System (INIS)

    Liu, Dianguang; Zhu, Zhenfeng

    2014-01-01

    Highlights: • Al 2 O 3 :Eu 3+ phosphors were prepared via a microwave solvothermal route. • The particles were hierarchically nanostructured microspheres packaged by nanosheets. • The powders presented excellent orange–red emission when excited at 393 nm. • Critical concentration and distance of Eu 3+ in Al 2 O 3 is 0.007, 18 Å, respectively. -- Abstract: Al 2 O 3 :Eu 3+ samples were synthesized via microwave solvothermal method and thermal decomposition of Eu 3+ doped precursors. The sample characterizations were carried out by means of X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence (PL) spectra. XRD results indicated that Eu 3+ doped samples were most of α-Al 2 O 3 phase after being calcined at 1473 K. SEM results showed that the obtained α-Al 2 O 3 based powders via microwave solvothermal method were microspheres with an average diameter about 1.6 μm. PL spectra showed that upon excitation at 393 nm, the orange–red emission bands at the wavelength longer than 560 nm were from 5 D 0 → 7 F J (J = 1, 2) transitions. The asymmetry ratio of ( 5 D 0 → 7 F 2 )/( 5 D 0 → 7 F 1 ) intensity is about 1 and this value suggests that Eu 3+ ions occupy the same ratio of symmetry and asymmetry sites. It is shown that the 0.7 mol% of doping concentration of Eu 3+ ions in α-Al 2 O 3 :Eu 3+ is optimum. According to Dexter’s theory, the critical distance between Eu 3+ ions for energy transfer was determined to be 18 Å

  20. Luminescence rise time in self-activated PbWO{sub 4} and Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} scintillation crystals

    Energy Technology Data Exchange (ETDEWEB)

    Auffray, E. [CERN, Geneva (Switzerland); Augulis, R. [Center for Physical Sciences and Technology, Savanorių av. 231, Vilnius (Lithuania); Borisevich, A. [Research Institute for Nuclear Problems, Bobruiskaya str. 11, Minsk (Belarus); Gulbinas, V. [Center for Physical Sciences and Technology, Savanorių av. 231, Vilnius (Lithuania); Fedorov, A.; Korjik, M. [Research Institute for Nuclear Problems, Bobruiskaya str. 11, Minsk (Belarus); Lucchini, M.T. [CERN, Geneva (Switzerland); Mechinsky, V. [Research Institute for Nuclear Problems, Bobruiskaya str. 11, Minsk (Belarus); Nargelas, S. [Vilnius University, Universiteto str. 3, Vilnius (Lithuania); Songaila, E. [Center for Physical Sciences and Technology, Savanorių av. 231, Vilnius (Lithuania); Tamulaitis, G. [Vilnius University, Universiteto str. 3, Vilnius (Lithuania); Vaitkevičius, A., E-mail: augustas.vaitkevicius@ff.vu.lt [Vilnius University, Universiteto str. 3, Vilnius (Lithuania); Zazubovich, S. [Institute of Physics, University of Tartu, W. Ostwaldi Str. 1, Tartu (Estonia)

    2016-10-15

    The time resolution of scintillation detectors of ionizing radiation is one of the key parameters sought for in the current and future high-energy physics experiments. This study is encouraged by the necessity to find novel detection methods enabling a sub-10-ps time resolution in scintillation detectors and is focused on the exploitation of fast luminescence rise front. Time-resolved photoluminescence (PL) spectroscopy and thermally stimulated luminescence techniques have been used to study two promising scintillators: self-activated lead tungstate (PWO, PbWO{sub 4}) and Ce-doped gadolinium aluminum gallium garnet (GAGG, Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12}). A sub-picosecond PL rise time is observed in PWO, while longer processes in the PL response in GAGG:Ce are detected and studied. The mechanisms responsible for the PL rise time in self-activated and doped scintillators are under discussion. - Highlights: • Photoluminescence rise time is studied in two scintillators: PWO and GAGG:Ce. • Sub-picosecond photoluminescence rise time in PWO is observed for the first time. • A multicomponent luminescence rise edge is observed in GAGG:Ce. • The mechanisms behind luminescence kinetics in the crystals are under discussion.

  1. Effects of MnO{sub 2} doping on structure, dielectric and piezoelectric properties of 0.825NaNbO{sub 3}-0.175Ba{sub 0.6}(Bi{sub 0.5}K{sub 0.5}){sub 0.4}TiO{sub 3} lead-free ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Ximing; Lin, Dunmin; Zheng, Qiaoji; Sun, Hailing; Wan, Yang; Wu, Xiaochun [College of Chemistry and Materials Science, and Visual Computing and Virtual Reality Key Laboratory of Sichuan Province, Sichuan Normal University, Chengdu 610066 (China); Wu, Lang [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China)

    2012-12-15

    Lead-free ceramics 0.825NaNbO{sub 3}-0.175Ba{sub 0.6}(Bi{sub 0.5}K{sub 0.5}){sub 0.4}TiO{sub 3} + xmol% MnO{sub 2} were prepared by an ordinary sintering technique and the effects of MnO{sub 2} doping on the structure, dielectric, and piezoelectric properties of the ceramics were studied. The ceramics with perovskite structure are transformed from tetragonal to pseudocubic phases by increasing the doping level of MnO{sub 2}. After the addition of MnO{sub 2}, the Curie temperature T{sub C} of the ceramics decreases and the ferroelectric-paraelectric phase transition at T{sub C} becomes more diffusive. Because of the donor and acceptor doping effects of Mn ions simultaneously, the piezoelectric constant d{sub 33}, electromechanical coupling coefficient k{sub p}, relative permittivity {epsilon}{sub r}, and mechanical quality factor Q{sub m} are enhanced considerably after the addition of 1 mol% MnO{sub 2}. The ceramic with 1 mol% MnO{sub 2} doping possesses the optimum piezoelectricity (d{sub 33} = 131 pC/N and k{sub p} = 21.8%) and relatively high Q{sub m} = 627. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Imaging responses of on-site CsI and Gd2O2S flat-panel detectors: Dependence on the tube voltage

    Science.gov (United States)

    Jeon, Hosang; Chung, Myung Jin; Youn, Seungman; Nam, Jiho; Lee, Jayoung; Park, Dahl; Kim, Wontaek; Ki, Yongkan; Kim, Ho Kyung

    2015-07-01

    One of the emerging issues in radiography is low-dose imaging to minimize patient's exposure. The scintillating materials employed in most indirect flat-panel detectors show a drastic change of X-ray photon absorption efficiency around their K-edge energies that consequently affects image quality. Using various tube voltages, we investigated the imaging performance of most popular scintillators: cesium iodide (CsI) and gadolinium oxysulfide (Gd2O2S). The integrated detective quantum efficiencies (iDQE) of four detectors installed in the same hospital were evaluated according to the standardized procedure IEC 62220-1 at tube voltages of 40 - 120 kVp. The iDQE values of the Gd2O2S detectors were normalized by those of CsI detectors to exclude the effects of image postprocessing. The contrast-to-noise ratios (CNR) were also evaluated by using an anthropomorphic chest phantom. The iDQE of the CsI detector outperformed that of the Gd2O2S detector over all tube voltages. Moreover, we noted that the iDQE of the Gd2O2S detectors quickly rolled off with decreasing tube voltage under 70 kVp. The CNRs of the two scintillators were similar at 120 kVp. At 60 kVp, however, the CNR of Gd2O2S was about half that of CsI. Compared to the Gd2O2S detectors, variations in the DQE performance of the CsI detectors were relatively immune to variations in the applied tube voltages. Therefore, we claim that Gd2O2S detectors are inappropriate for use in low-tube-voltage imaging (e.g., extremities and pediatrics) with low patient exposure.

  3. Effect of MnO doping on the structure, microstructure and electrical properties of the (K,Na,Li)(Nb,Ta,Sb)O3 lead-free piezoceramics

    International Nuclear Information System (INIS)

    Rubio-Marcos, F.; Marchet, P.; Vendrell, X.; Romero, J.J.; Remondiere, F.; Mestres, L.; Fernandez, J.F.

    2011-01-01

    Highlights: · MnO doping effects on structure and properties of (K,Na,Li)(Nb,Ta,Sb)O 3 piezoceramics. · The structure changes towards an orthorhombic symmetry for higher MnO concentrations. · High doping levels induce a tetragonal tungsten-bronze secondary phase. · Mn 2+ doping modifies the phase transition temperature and the piezoelectric properties. · Manganese doping increases the mechanical quality factor Q m . - Abstract: Mn 2+ -doped (K,Na,Li)(Nb,Ta,Sb)O 3 lead-free piezoelectric ceramics have been prepared by a conventional sintering technique. The effects of Mn 2+ doping on the phase structure, microstructure and ferro-piezoelectric properties of the ceramics have been evaluated. MnO doping modifies the (K,Na,Li)(Nb,Ta,Sb)O 3 structure, giving rise to the appearance of a TTB-like secondary phase and to changes on the orthorhombic to tetragonal phase transition temperature. The modification of this temperature induces a reduction of the piezoelectric constants, which is accompanied by an increase on the mechanical quality factor. Mn 2+ ions incorporate into the perovskite structure in different off ways depending on their concentration.

  4. The development of new phosphors of Tb3+/Eu3+ co-doped Gd3Al5O12 with tunable emission

    Science.gov (United States)

    Teng, Xin; Wang, Wenzhi; Cao, Zhentao; Li, Jinkai; Duan, Guangbin; Liu, Zongming

    2017-07-01

    The gadolinium aluminum garnets Gd3Al5O12 (GdAG) activated with Tb3+/Eu3+ were successfully prepared via co-precipitation method at 1500 °C in this work. The crystal structure stabilization, elements analysis, microphotograph, PL/PLE spectra, decay behavior and quantum efficiency were discussed in detail. The metastable GdAG compounds been effectively stabilized by doping with smaller 10 at.% Tb3+, which then allows the development of new phosphors of (Gd0.9-xTb0.1Eux)3Al5O12 (GdAG:Tb3+/Eu3+, x = 0-0.03) for opto-functionality explorations. The PLE/PL spectra displays that the strongest PLE peak was located at ∼276 nm, which overlaps the 8S7/2 → 6IJ transition of Gd3+. Under 276 nm excitation, the phosphors exhibited both Tb3+ and Eu3+ emissions at 548 nm (green, 5D4 → 7F5 transition of Tb3+) and 592 nm (orange-red, 5D0 → 7F1 transition of Eu3+), respectively. The emission intensities of Tb3+ and Eu3+ remarkably varied with the Eu3+ incorporation. As a consequence, the emission color can be readily tuned from approximately green to orange-red. Fluorescence decay analysis found that the lifetime for the Tb3+ emission rapidly decreased conforming to the Tb3+ → Eu3+ energy transfer, and the energy transfer efficiency was calculated. Owing to the Gd3+ → Eu3+ and Gd3+ → Tb3+ energy transfer, the emission intensities of Tb3+ and Eu3+ in (Gd0.9-xTb0.1Eux)AG phosphor were higher than (Y0.87Tb0.1Eu0.03)AG and (Lu0.87Tb0.1Eu0.03)AG system. The (Gd0.9-xTb0.1Eux)AG garnet phosphors developed in this work may serve as a new type of phosphor which hopefully meets the requirements of various lighting and optical display applications.

  5. Epitaxial growth of Sc{sub 2}O{sub 3} films on Gd{sub 2}O{sub 3}-buffered Si substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Paulraj, Joseph; Wang, Rongping; Sellars, Matthew; Luther-Davies, Barry [Australian National University, Laser Physics Centre, Research School of Physics and Engineering, Acton, Canberra, ACT (Australia)

    2016-04-15

    We investigated the optimal conditions to prepare high-quality Sc{sub 2}O{sub 3} films on Gd{sub 2}O{sub 3}-buffered Si wafers using pulsed laser deposition technique with an aim at developing waveguide devices that can transform the performance of the gradient echo quantum memory based on bulk crystals. Under the optimal conditions, only oxide and Si (2 2 2) peaks appeared in the X-ray diffraction pattern. The Sc{sub 2}O{sub 3} (2 2 2) diffraction peak was located at 2θ=31.5 with a full width at half maxima (FWHM) of 0.16 , and its rocking curve had a FWHM of 0.10 . In-plane epitaxial relationship was confirmed by X-ray pole figure where Sc{sub 2}O{sub 3} (1 1 1) was parallel to Si (1 1 1). High-resolution TEM images indicated clear interfaces and perfect lattice images with sharp electron diffraction dots. All these results confirm that the oxide films on Si were single crystalline with high quality. (orig.)

  6. Electron magnetic resonance of diluted solid solutions of Gd{sup 3+} in SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Biasi, R.S. de, E-mail: rsbiasi@ime.eb.br [Secao de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil); Grillo, M.L.N., E-mail: mluciag@uerj.br [Instituto de Fisica, Universidade do Estado do Rio de Janeiro, 20550-013 Rio de Janeiro, RJ (Brazil)

    2011-10-17

    Highlights: {yields} EMR is an effective method to study the range of the exchange interaction in solid solutions. {yields} The range of the exchange interaction between Gd{sup 3+} ions in SrTiO{sub 3} is about 0.96 nm. {yields} The linewidth increases faster with Gd concentration in SrTiO{sub 3} than in other host lattices, such as CeO{sub 2}, SrO, CaO and ZrSiO{sub 4}. - Abstract: Electron magnetic resonance (EMR) spectra of gadolinium-doped strontium titanate (SrTiO{sub 3}) have been studied at room temperature for gadolinium concentrations between 0.20 and 1.20 mol%. The results suggest that the Gd{sup 3+} ions occupy substitutional sites, replacing the Sr{sup 2+} ion, that the electron magnetic resonance linewidth increases with increasing gadolinium concentration and that the range of the exchange interaction between Gd{sup 3+} ions is about 0.96 nm, of the same order as that of the same ion in other host lattices, such as ceria (CeO{sub 2}), quicklime (CaO), strontia (SrO) and zircon (ZrSiO{sub 4}). The fact that the electron magnetic resonance linewidth of the Gd{sup 3+} ion increases, regularly and predictably, with Gd concentration, shows that the Gd{sup 3+} ion can be used as a probe to study, rapidly and non-destructively, the crystallinity and degradation of SrTiO{sub 3}.

  7. High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

    International Nuclear Information System (INIS)

    Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

    2014-01-01

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

  8. Influence of core size on the upconversion luminescence properties of spherical Gd2O3:Yb3+/Er3+@SiO2 particles with core-shell structures

    International Nuclear Information System (INIS)

    Zheng, Kezhi; Liu, Zhenyu; Liu, Ye; Song, Weiye; Qin, Weiping

    2013-01-01

    Spherical SiO 2 particles with different sizes (30, 80, 120, and 180 nm) have been coated with Gd 2 O 3 :Yb 3+ /Er 3+ layers by a heterogeneous precipitation method, leading to the formation of core-shell structural Gd 2 O 3 :Yb 3+ /Er 3+ @SiO 2 particles. The samples were characterized by using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, upconversion (UC) emission spectra, and fluorescent dynamical analysis. The obtained core-shell particles have perfect spherical shape with narrow size distribution. Under the excitation of 980 nm diode laser, the core-shell samples showed size-dependent upconversion luminescence (UCL) properties. The inner SiO 2 cores in core-shell samples were proved to have limited effect on the total UCL intensities of Er 3+ ions. The UCL intensities of core-shell particles were demonstrated much higher than the values obtained in pure Gd 2 O 3 :Yb 3+ /Er 3+ with the same phosphor volume. The dependence of the specific area of a UCL shell on the size of its inner SiO 2 particle was calculated and analyzed for the first time. It was confirmed that the surface effect came from the outer surfaces of emitting shells is dominant in influencing the UCL property in the core-shell samples. Three-photon UC processes for the green emissions were observed in the samples with small sizes of SiO 2 cores. The results of dynamical analysis illustrated that more nonradiative relaxation occurred in the core-shell samples with smaller SiO 2 core sizes

  9. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

    Science.gov (United States)

    Zou, Xuming; Liu, Xingqiang; Wang, Chunlan; Jiang, Ying; Wang, Yong; Xiao, Xiangheng; Ho, Johnny C; Li, Jinchai; Jiang, Changzhong; Xiong, Qihua; Liao, Lei

    2013-01-22

    In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs. A series of scaling effects in the mobility, transconductance, threshold voltage, and source-drain current with respect to the device channel length are also observed. Specifically, a small gate delay time (0.01 ns) and high on-current density (0.9 mA/μm) are obtained at 300 nm channel length. Furthermore, Mg-doped In(2)O(3) NWs are then employed to fabricate NW parallel array FETs with a high saturation current (0.5 mA), on/off ratio (>10(9)), and field-effect mobility (110 cm(2)/V·s), while the subthreshold slope and threshold voltage do not show any significant changes. All of these results indicate the great potency for metal-doped In(2)O(3) NWs used in the low-power, high-performance thin-film transistors.

  10. Synthesis, crystal structure, and physical properties of the Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} phases

    Energy Technology Data Exchange (ETDEWEB)

    Forbes, Scott; Yuan, Fang [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada); Kosuda, Kosuke; Kolodiazhnyi, Taras [Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Mozharivskyj, Yurij, E-mail: mozhar@mcmaster.ca [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada)

    2016-01-15

    The second and third known rare-earth bismuthide oxides, Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8}, have been discovered via high temperature reactions at 1300 °C. Like its Gd–Sb–O counterparts, the Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} phases crystallize in the monoclinic C2/m space group, with the latter containing disordered Bi atoms along the b direction of the unit cell. Unlike the RE{sub 8}Sb{sub 3}O{sub 8} series, the formation of the Gd{sub 3}BiO{sub 3} phase does not necessarily precede the formation of Gd{sub 8}Bi{sub 3}O{sub 8}, which is likely due to the difficulty of accommodating bismuth in the RE–O framework due to its larger size. Physical property measurements performed on a pure Gd{sub 8}Bi{sub 3}O{sub 8} sample reveal semiconducting behavior. Although electronic structure calculations predict metallic behavior due to an unbalanced electron count, the semiconducting behavior originates from the Anderson localization of the Bi p states near the Fermi level as a result of atomic disorder. - Graphical abstract: Reaction of GdBi and Gd{sub 2}O{sub 3} at high temperatures yields Gd–Bi–O phases. - Highlights: • Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8}, the second and third rare-earth bismuthide oxides, have been discovered. • Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} are isostructural with RE{sub 3}SbO{sub 3} and RE{sub 8}Sb{sub 3}O{sub 8}. • Gd{sub 8}Bi{sub 3}O{sub 8} displays semiconducting behavior despite an unbalanced electron count. • Anderson localization of Bi p states results in semiconducting behavior in Gd{sub 8}Bi{sub 3}O{sub 8}.

  11. Ultraviolet emitting (Y1-xGd x)2O3-δ thin films deposited by radio frequency magnetron sputtering; structure-property-thin film processing relationships

    International Nuclear Information System (INIS)

    Fowlkes, J.D.; Fitz-Gerald, J.M.; Rack, P.D.

    2007-01-01

    The effects that the oxygen partial pressure, substrate temperature and annealing temperature have on the cathodoluminescence (CL) efficiency of radio frequency magnetron sputter deposited Gd-doped Y 2 O 3 thin films is investigated. Furthermore these sputtering parameters are correlated to the degree of crystallinity, the phases present (cubic (α) versus monoclinic (β) Y 2 O 3 ), and the stoichiometry of the thin films. Films deposited at room temperature (RT) did not CL, however, the films were activated by a post-deposition anneal at 1273 K for 6 h. Films deposited at 873 K had a very low CL efficiency which was significantly enhanced by a post-deposition anneal. For RT deposited films the external CL efficiency increased with increasing oxygen partial pressure for the range studied, however the opposite trend was observed for the 873 K deposited films. Examination of the morphology and grain size of the high temperature deposited films revealed that the average grain size increased with decreasing partial pressure and the observed increase in the external CL efficiency was attributed to enhanced anomalous diffraction. An intrinsic CL efficiency term was determined to circumvent the effects of the enhanced anomalous diffraction, and the CL efficiency was correlated to the integrated intensity of the (222) of the cubic α-Y 2 O 3 phase

  12. Tune color of single-phase LiGd(MoO4)2-X(WO4)X: Sm3+, Tb3+ via adjusting the proportion of matrix and energy transfer to create white-light phosphor

    Science.gov (United States)

    Wu, Hongyue; Yang, Junfeng; Wang, Xiaoxue; Gan, Shucai; Li, Linlin

    2018-03-01

    A series of LiGd(MO4)2: Sm3+, Tb3+ (M = Mo, W) phosphors was prepared by a conventional solid state reaction method. Powder X-Ray diffraction (XRD) analysis reveals that the compounds are of the same structure type. Their luminescent properties have been studied. The optimal doping concentrations are 8% for Sm3+ and 18% for Tb3+ in the LiGd(MoO4)2 host. Sm3+ and Tb3+ have different sensitivity to the Mo/W ratio. For LiGd(MoO4)2-X(WO4)X: Sm3+ (X = 0, 0.4, 0.8, 1.2, 1.6, 2.0), the strongest emission intensity is 1.766 times than that of the weakest, while 171 times for LiGd(MoO4)2-X(WO4)X: Tb3+. The experimental results show that Mo/W ratio strong influences on the properties of LiGd(MoO4)2-X(WO4)X: Tb3+. With the increasing of WO42- groups concentration, the shape of characteristic excitation peaks of Tb3+ is almost the same and the excitation intensity gradually increase. Moreover, the energy transfer from Tb3+ to Sm3+ has been realized in the co-doped phosphors. The experimental analysis and theoretical calculations reveal that the quadrupole-quadrupole interaction is the dominant mechanism for the Tb3+→Sm3+ energy transfer. Therefore, luminous intensity can be adjusted by different sensitivities to matrix composition and energy transfer from Tb3+→Sm3+. By this tuning color method, white-light-emitting phosphor has been prepared. The excitation wavelength is 378 nm, and this indicates that the white-light-emitting phosphor could be pumped by near-UV light.

  13. Giant strain with low cycling degradation in Ta-doped [Bi{sub 1/2}(Na{sub 0.8}K{sub 0.2}){sub 1/2}]TiO{sub 3} lead-free ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaoming; Tan, Xiaoli, E-mail: xtan@iastate.edu [Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011 (United States)

    2016-07-21

    Non-textured polycrystalline [Bi{sub 1/2}(Na{sub 0.8}K{sub 0.2}){sub 1/2}](Ti{sub 1−x}Ta{sub x})O{sub 3} ceramics are fabricated and their microstructures and electrical properties are characterized. Transmission electron microscopy reveals the coexistence of the rhombohedral R3c and tetragonal P4bm phases in the form of nanometer-sized domains in [Bi{sub 1/2}(Na{sub 0.8}K{sub 0.2}){sub 1/2}]TiO{sub 3} with low Ta concentration. When the composition is x = 0.015, the electrostrain is found to be highly asymmetric under bipolar fields of ±50 kV/cm. A very large value of 0.62% is observed in this ceramic, corresponding to a large-signal piezoelectric coefficient d{sub 33}* of 1240 pm/V (1120 pm/V under unipolar loading). These values are greater than most previously reported lead-free polycrystalline ceramics and can even be compared with some lead-free piezoelectric single crystals. Additionally, this ceramic displays low cycling degradation; its electrostrain remains above 0.55% even after undergoing 10 000 cycles of ±50 kV/cm bipolar fields at 2 Hz. Therefore, Ta-doped [Bi{sub 1/2}(Na{sub 0.8}K{sub 0.2}){sub 1/2}]TiO{sub 3} ceramics show great potential for large displacement devices.

  14. Synthesis and characterization of nano-crystalline Ce1-xGd xO2-x/2 (x = 0-0.30) solid solutions

    DEFF Research Database (Denmark)

    Jadhav, L. D.; Chourashiya, M. G.; Jamale, A. P.

    2010-01-01

    glycine-nitrate process (GNP) has been presented. Evolution of structural and morphological properties of nano-powders as a function of heat treatment has also been studied. The prepared samples were characterized using TG-DTA, FT-IR, Raman spectroscopy, XRD, SEM, etc. In addition, the effect of Gd......In recent years, doped ceria is an established and promising candidate as solid electrolyte for intermediate temperature solid oxide fuel cell (IT-SOFC). In this investigation, synthesis and characterizations of nano-crystalline Gd doped ceria, (Ce1-xGdxO2-x/2, where x = 0-0.3), prepared using...... of sintered samples was observed to hinder with an increase in Gd content....

  15. Scintillation timing characteristics of (La,Gd).sub.2./sub.Si.sub.2./sub.O.sub.7./sub.:Ce and Gd.sub.2./sub.SiO.sub.5./sub.:Ce single crystal scintillators: A comparative study

    Czech Academy of Sciences Publication Activity Database

    Chewpraditkul, W.; Sakthong, O.; Chewpraditkul, Wa.; Yawai, N.; Szczesniak, T.; Swiderski, L.; Moszynski, M.; Kurosawa, S.; Murakami, R.; Horiai, T.; Yoshikawa, A.; Nikl, Martin

    2016-01-01

    Roč. 92, Sep (2016), s. 49-53 ISSN 1350-4487 R&D Projects: GA MŠk(CZ) LH14266 Institutional support: RVO:68378271 Keywords : coincidence time resolution * energy resolution * (La,Gd) 2 Si 2 O 7 :Ce * Gd 2 SiO 5 :Ce * scintillation decays Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.442, year: 2016

  16. Color tunable emission in Ce3+ and Tb3+ co-doped Ba2Ln(BO3)2Cl (Ln=Gd and Y) phosphors for white light-emitting diodes.

    Science.gov (United States)

    Zhang, Niumiao; Guo, Chongfeng; Jing, Heng; Jeong, Jung Hyun

    2013-12-01

    Ce(3+) and Tb(3+) co-doped Ba2Ln(BO3)2Cl (Ln=Y and Gd) green emitting phosphors were prepared by solid state reaction in reductive atmosphere. The emission and excitation spectra as well as luminescence decays were investigated, showing the occurrence of efficient energy transfer from Ce(3+) to Tb(3+) in this system. The phosphors exhibit both a blue emission from Ce(3+) and a green emission from Tb(3+) under near ultraviolet light excitation with 325-375 nm wavelength. Emission colors of phosphors could be tuned from deep blue through cyan to green by adjusting the Tb(3+) concentrations. The energy transfer efficiency and emission intensity of Ba2Y(BO3)2Cl:Ce(3+), Tb(3+) precede those of Ba2Gd(BO3)2Cl:Ce(3+), Tb(3+), and the sample Ba2Y(BO3)2Cl:0.03Ce(3+), 0.10Tb(3+) is the best candidate for n-UV LEDs. Copyright © 2013 Elsevier B.V. All rights reserved.

  17. Potassium vanadium selenite, K(VO2)3(SeO3)2

    International Nuclear Information System (INIS)

    Harrison, W.T.A.; Dussack, L.L.; Jacobson, A.J.

    1995-01-01

    The hydrothermal synthesis and single-crystal structure of potassium vanadium(V) selenite, K(VO 2 ) 3 (SeO 3 ) 2 , are reported. K(VO 2 ) 3 (SeO 3 ) 2 is a layered phase based on a hexagonal tungsten-oxide-like array of corner-sharing VO 6 octahedra capped by Se atoms, and is isostructural with NH 4 (VO 2 ) 3 (SeO 3 ) 2 . (orig.)

  18. Synthesis of La2O3 doped Zn2SnO4 hollow fibers by electrospinning method and application in detecting of acetone

    Science.gov (United States)

    Yang, H. M.; Ma, S. Y.; Yang, G. J.; Chen, Q.; Zeng, Q. Z.; Ge, Q.; Ma, L.; Tie, Y.

    2017-12-01

    Hollow porous pure and La2O3 doped Zn2SnO4 fibers were synthesized via single capillary electrospinning technology and used for obtaining of gas sensors. The as-prepared samples were characterized by microscopy, Brunauer-Emmett-Teller, X-ray photoelectron spectroscopy and UV-vis absorption spectra. The newly obtained gas sensors were investigated for acetone detection. Compared with pure Zn2SnO4 hollow fibers, the La2O3 doped Zn2SnO4 hollow fibers not only exhibited perfect sensing performance toward acetone with excellent selectivity, high response and fast response/recovery capability (7 s for adsorption and 9 s for desorption), but also the operating temperature was reduced from 240 °C to 200 °C. These results demonstrated that the special hollow porous La doped Zn2SnO4 fibers structures were used as the sensing material for fabricating high performance acetone sensors. The acetone sensing mechanism of La2O3 doped Zn2SnO4 hollow fibers was discussed too.

  19. Luminescence, scintillation, and energy transfer in SiO{sub 2}-Al{sub 2}O{sub 3}-B{sub 2}O{sub 3}-Gd{sub 2}O{sub 3}:Ce{sup 3+},Pr{sup 3+} glasses

    Energy Technology Data Exchange (ETDEWEB)

    Lertloypanyachai, Prapon; Chewpraditkul, Weerapong; Pattanaboonmee, Nakarin [Department of Physics, King Mongkut' s University of Technology Thonburi, Bangkok (Thailand); Chen, Danping [Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai (China); Babin, Vladimir; Beitlerova, Alena; Nikl, Martin [Institute of Physics, AS CR, Prague (Czech Republic)

    2017-09-15

    Ce{sup 3+},Pr{sup 3+}-codoped SiO{sub 2}-Al{sub 2}O{sub 3}-B{sub 2}O{sub 3}-Gd{sub 2}O{sub 3} glasses (SABG:Ce,Pr) were prepared by melt quenching under a CO reducing atmosphere. Luminescence properties were investigated under UV and X-ray excitations. A dominant emission band at 430 nm belonging to the Ce{sup 3+}:5d{sub 1} → 4f transition was observed in the photo- and radio-luminescence spectra. The energy transfer occurs from this Ce{sup 3+} band toward the {sup 3}P{sub J} levels of Pr{sup 3+} with an efficiency of up to 24%, followed by the reduction of integrated luminescence intensity with an increasing Pr{sup 3+} concentration. This result is attributed to the increase in the reabsorption of Ce{sup 3+} luminescence and the non-radiative energy transfer toward the {sup 3}P{sub J} levels of Pr{sup 3+}. The cross-relaxation process within the Pr{sup 3+} pairs can further diminish the total luminescence yield at high Pr{sup 3+} concentrations. The integral scintillation efficiency and light yield measurements were carried out and compared to the reference Bi{sub 4}Ge{sub 3}O{sub 12} (BGO) crystal. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Thermal properties of GdSr{sub 2}RuCu{sub 2}O{sub 8-{delta}} based mixtures in the GdSr{sub 2}RuO{sub 6}-CuO pseudo-binary system

    Energy Technology Data Exchange (ETDEWEB)

    Gombos, Marcello [Laboratorio Regionale Supermat CNR-INFM Via Salvador Allende, I-84081 Baronissi (Italy); Dipartimento di Fisica ' E.R.Caianiello' , Universita di Salerno, Via Salvador Allende, I-84081 Baronissi (Italy)], E-mail: gombos@sa.infn.it; Ciancio, Regina; Vecchione, Antonio; Pace, Sandro [Laboratorio Regionale Supermat CNR-INFM Via Salvador Allende, I-84081 Baronissi (Italy); Dipartimento di Fisica ' E.R.Caianiello' , Universita di Salerno, Via Salvador Allende, I-84081 Baronissi (Italy)

    2007-09-01

    GdSr{sub 2}RuCu{sub 2}O{sub 8-{delta}} (Gd1212) rutheno-cuprate compound is widely studied because it shows the coexistence of superconductivity and highly anisotropic magnetic ordering in the same cell. Anyway the nature of the magnetic ordering is still debated and the fabrication of macroscopic samples oriented along a crystallographic axis, that could help to clarify its details, appears to be quite difficult. For this reason, accurate investigation on Gd1212 incongruent melting reaction, producing liquid copper oxide and the solid GdSr{sub 2}RuO{sub 6} (Gd1210), appears to be necessary to improve the fabrication of crystallographically oriented bulk superconducting samples. Thermo-gravimetric and differential thermal measurements were performed to analyse the thermal behaviour up to 1200 deg. C and the melting temperatures of different mixtures of Gd1212 with Gd1210 or CuO, in view to perform a scan of the whole CuO-Gd1212-Gd1210 coexistence line of the Gd-Sr-Ru-Cu-O phase diagram. Dependence on the atmosphere and the formation of different spurious phases was also studied.

  1. Physical Properties of Mixed Conductor Solid Oxide Fuel Cell Anodes of Doped CeO2

    DEFF Research Database (Denmark)

    Mogensen, Mogens Bjerg; Lindegaard, Thomas; Hansen, Uffe Rud

    1994-01-01

    Samples of CeO2 doped with oxides such as CaO and Gd2O3 were prepared. Their conductivities and expansions onreduction were measured at 1000°C, and the thermal expansion coefficients in the range 50 to 1000°C were determined. Theionic and electronic conductivity were derived from curves of total ...

  2. Optical properties of ZrO2, SiO2 and TiO2-SiO2 xerogels and coatings doped with Eu3+ and Eu2+

    Directory of Open Access Journals (Sweden)

    Gonçalves Rogéria R.

    1999-01-01

    Full Text Available Eu3+ doped bulk monoliths and thin films were obtained by sol-gel methods in the ZrO2, SiO2 and SiO2-TiO2 systems. Eu3+ 5D0 ® 7FJ emission and decay time characteristics were measured during the entire experimental preparation route from the initial sol to the final xerogels. The crystalline phases identified were tetragonal ZrO2 and mixtures of rutile and anatase TiO2 at high temperature treatments in bulk samples. Good quality thin films were obtained for all systems by dip-coating optical glasses (Schott BK270. The same spectroscopic features were observed either for the bulk monoliths or the films. By appropriate heat treatments under H2 atmosphere Eu2+ containing samples could be obtained in the SiO2-TiO2 system.

  3. Reddish-orange, neutral and warm white emissions in Eu3+, Dy3+ and Dy3+/Eu3+ doped CdO-GeO2-TeO2 glasses

    Science.gov (United States)

    Rodríguez-Carvajal, David A.; Meza-Rocha, A. N.; Caldiño, U.; Lozada-Morales, R.; Álvarez, E.; Zayas, Ma. E.

    2016-11-01

    Eu3+, Dy3+ and Dy3+/Eu3+ doped CdO-GeO2-TeO2 glasses were prepared using the melt-quenching process and analyzed by X-diffraction, Raman spectroscopy, excitation and emission spectra, and emission decay time profiles. The lack of X ray diffraction peaks revealed that all samples are amorphous. Vibrational modes associated with Tesbnd Osbnd Te and Gesbnd Osbnd Ge related bonds and molecular oxygen were detected by Raman spectroscopy. The luminescence characteristics were studied upon excitations that correspond with the emission of InGaN (370-420 nm) based LEDs. The Eu3+ singly doped glass displayed reddish-orange global emission, with x = 0.601 and y = 0.349 CIE1931 chromaticity coordinates, upon 393 nm excitation. Neutral emission with x = 0.373 and y = 0.412 CIE1931 chromaticity coordinates and correlated color temperature (CCT) of 4400 K, was achieved in the Dy3+ singly doped glass excited at 388 nm. The Dy3+/Eu3+ co-doped glass exhibited warm, neutral and soft warm white emissions with CCT values of 3435, 4153 and 2740 K, under excitations at 382, 388 and 393 nm, respectively, depending mainly on the Dy3+ and Eu3+ relative excitation. The Dy3+ excitation bands observed in the Dy3+/Eu3+ glass by monitoring the 611 nm Eu3+ emission, suggest that Dy3+ → Eu3+ energy transfer takes place, despite the fact that the Dy3+ emission decays in the Dy3+ and Dy3+/Eu3+ doped glass, remain without changes. The shortening of Eu3+ decay in presence of Dy3+ was attributed to an Eu3+ → Dy3+ non-radiative energy transfer process, which according with the Inokuti-Hirayama model might be dominated through an electric quadrupole-quadrupole interaction, with efficiency and probability of 5.5% and 51.6 s-1, respectively.

  4. Al2O3 adherence on CoCrAl alloys

    International Nuclear Information System (INIS)

    Kingsley, L.M.

    1980-04-01

    Adherence of protective oxides on NiCrAl and CoCrAl superalloys has been promoted by a dispersion of a highly oxygen reactive element or its oxide being produced within the protection system. Two aspects of this subject are investigated here: the use of Al 2 O 3 as both the dispersion and protective oxide; and the production of an HfO 2 dispersion while simultaneously aluminizing the alloy. It was found that an Al 2 O 3 dispersion will act to promote the adherence of an external scale of Al 2 O 3 to a degree comparable to previously tested dispersions and an HfO 2 dispersion comparable to that produced by a Rhines pack treatment is produced during aluminization

  5. Room temperature magnetic ordering, enhanced magnetization and exchange bias of GdMnO{sub 3} nanoparticles in (GdMnO{sub 3}){sub 0.70}(CoFe{sub 2}O{sub 4}){sub 0.30}

    Energy Technology Data Exchange (ETDEWEB)

    Mitra, A.; Mahapatra, A.S.; Mallick, A.; Chakrabarti, P.K., E-mail: pabitra_c@hotmail.com

    2017-02-15

    Nanoparticles of GdMnO{sub 3} (GMO) are prepared by sol-gel method. To enhance the magnetic property and also to obtain the magnetic ordering at room temperature (RT), nanoparticles of GMO are incorporated in the matrix of CoFe{sub 2}O{sub 4} (CFO). Desired crystallographic phases of CFO, GMO and GMO-CFO are confirmed by analyzing X-ray diffractrograms (XRD) using Rietveld method. The average size of nanoparticles and their distribution, crystallographic phase, nanocrystallinity etc. are studied by high-resolution transmission electron microscope (HRTEM). Magnetic hysteresis loops (M-H) of GMO-CFO under zero field cooled (ZFC) and field cooled (FC) conditions are observed at different temperatures down to 5 K. Magnetization vs. temperature (M-T) under ZFC and FC conditions are also recorded. Interestingly, exchange bias (EB) is found at low temperature which suggests the encapsulation of the ferromagnetic (FM) nanoparticles of GMO by the ferrimagnetic nanoparticles of CFO below ~100 K. Enhanced magnetization, EB effect and RT magnetic ordering of GMO-CFO would be interesting for both theoretical and experimental investigations. - Highlights: • Nanoparticles of GdMnO{sub 3} are incorporated in the matrix of CoFe{sub 2}O{sub 4}. • RT magnetic ordering of GMO nanoparticles in GMO-CFO is observed. • Magnetic property of GMO-CFO is highly enhanced compared to GMO. • Exchange bias is found in GMO-CFO at low temperature.

  6. Synthesis, structure, luminescent, and magnetic properties of carbonato-bridged Zn(II)2Ln(III)2 complexes [(μ4-CO3)2{Zn(II)L(n)Ln(III)(NO3)}2] (Ln(III) = Gd(III), Tb(III), Dy(III); L(1) = N,N'-bis(3-methoxy-2-oxybenzylidene)-1,3-propanediaminato, L(2) = N,N'-bis(3-ethoxy-2-oxybenzylidene)-1,3-propanediaminato).

    Science.gov (United States)

    Ehama, Kiyomi; Ohmichi, Yusuke; Sakamoto, Soichiro; Fujinami, Takeshi; Matsumoto, Naohide; Mochida, Naotaka; Ishida, Takayuki; Sunatsuki, Yukinari; Tsuchimoto, Masanobu; Re, Nazzareno

    2013-11-04

    Carbonato-bridged Zn(II)2Ln(III)2 complexes [(μ4-CO3)2{Zn(II)L(n)Ln(III)(NO3)}2]·solvent were synthesized through atmospheric CO2 fixation reaction of [Zn(II)L(n)(H2O)2]·xH2O, Ln(III)(NO3)3·6H2O, and triethylamine, where Ln(III) = Gd(III), Tb(III), Dy(III); L(1) = N,N'-bis(3-methoxy-2-oxybenzylidene)-1,3-propanediaminato, L(2) = N,N'-bis(3-ethoxy-2-oxybenzylidene)-1,3-propanediaminato. Each Zn(II)2Ln(III)2 structure possessing an inversion center can be described as two di-μ-phenoxo-bridged {Zn(II)L(n)Ln(III)(NO3)} binuclear units bridged by two carbonato CO3(2-) ions. The Zn(II) ion has square pyramidal coordination geometry with N2O2 donor atoms of L(n) and one oxygen atom of a bridging carbonato ion at the axial site. Ln(III) ion is coordinated by nine oxygen atoms consisting of four from the deprotonated Schiff-base L(n), two from a chelating nitrate, and three from two carbonate groups. The temperature-dependent magnetic susceptibilities in the range 1.9-300 K, field-dependent magnetization from 0 to 5 T at 1.9 K, and alternating current magnetic susceptibilities under the direct current bias fields of 0 and 1000 Oe were measured. The magnetic properties of the Zn(II)2Ln(III)2 complexes are analyzed on the basis of the dicarbonato-bridged binuclear Ln(III)-Ln(III) structure, as the Zn(II) ion with d(10) electronic configuration is diamagnetic. ZnGd1 (L(1)) and ZnGd2 (L(2)) show a ferromagnetic Gd(III)-Gd(III) interaction with J(Gd-Gd) = +0.042 and +0.028 cm(-1), respectively, on the basis of the Hamiltonian H = -2J(Gd-Gd)ŜGd1·ŜGd2. The magnetic data of the Zn(II)2Ln(III)2 complexes (Ln(III) = Tb(III), Dy(III)) were analyzed by a spin Hamiltonian including the crystal field effect on the Ln(III) ions and the Ln(III)-Ln(III) magnetic interaction. The Stark splitting of the ground state was so evaluated, and the energy pattern indicates a strong easy axis (Ising type) anisotropy. Luminescence spectra of Zn(II)2Tb(III)2 complexes were observed, while those

  7. Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

    Science.gov (United States)

    García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

    2018-04-01

    The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

  8. Electrical and optical properties of Si-doped Ga2O3

    Science.gov (United States)

    Li, Yin; Yang, Chuanghua; Wu, Liyuan; Zhang, Ru

    2017-05-01

    The charge densities, band structure, density of states, dielectric functions of Si-doped β-Ga2O3 have been investigated based on the density functional theory (DFT) within the hybrid functional HSE06. The heavy doping makes conduction band split out more bands and further influences the band structure. It decreases the band gap and changes from a direct gap to an indirect gap. After doping, the top of the valence bands is mainly composed by the O-2p states, Si-3p states and Ga-4p states and the bottom of the conduction bands is almost formed by the Si-3s, Si-3p and Ga-4s orbits. The anisotropic optical properties have been investigated by means of the complex dielectric function. After the heavy Si doping, the position of absorption band edges did not change much. The slope of the absorption curve descends and indicates that the absorption became more slow for Si-doped β-Ga2O3 than undoped one due to the indirect gap of Si-doped β-Ga2O3.

  9. Role of alkali carbonate and salt in topochemical synthesis of K1/2Na1/2NbO3 and NaNbO3 templates

    Science.gov (United States)

    Lee, Jae-Seok; Jeon, Jae-Ho; Choi, Si-Young

    2013-11-01

    Since the properties of lead-free piezoelectric materials have thus far failed to meet those of lead-based materials, either chemical doping or morphological texturing should be employed to improve the piezoelectric properties of lead-free piezoelectric ceramics. The goal of this study was to synthesize plate-like K1/2Na1/2NbO3 and NaNbO3 particles, which are the most favorable templates for morphological texturing of K1/2Na1/2NbO3 ceramics. To achieve this goal, Bi2.5Na3.5Nb5O18 precursors in a plate-like shape were first synthesized and subsequently converted into K1/2Na1/2NbO3 or NaNbO3 particles that retain the morphology of Bi2.5Na3.5Nb5O18. In this study, we found that sodium or potassium carbonate does not play a major role in converting the Bi2.5Na3.5Nb5O18 precursor to K1/2Na1/2NbO3 or NaNbO3, on the contrary to previous reports; however, the salt contributes to the conversion reaction. All synthesis processes have been performed via a molten salt method, and scanning electron microscopy, scanning probe microscopy, and inductively coupled plasma mass spectroscopy were used to characterize the synthesized K1/2Na1/2NbO3 or NaNbO3 templates.

  10. Study on upconversion luminescence and thermal properties of Ho{sup 3+}/Yb{sup 3+} co-doped La{sub 2}O{sub 3}–TiO{sub 2}–ZrO{sub 2} glasses

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Minghui; Wen, Haiqin [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050 (China); Yu, Huimei [Analysis and Testing Center of Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050 (China); Ai, Fei [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050 (China); Shao, Hui [School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang, 212003 (China); Pan, Xiuhong; Tang, Meibo; Yu, Jianding; Gai, Lijun [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050 (China); Liu, Yan, E-mail: liuyan@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050 (China)

    2016-07-05

    Bulk Ho{sup 3+}/Yb{sup 3+} co-doped La{sub 2}O{sub 3}–TiO{sub 2}–ZrO{sub 2} glass spheres were fabricated by aerodynamic levitation method. High concentration of Yb{sup 3+} ions was successfully doped in glasses. The effects of Yb{sup 3+} concentration on mechanical properties, Raman, absorption spectra, thermal stability, and glass forming ability were studied systematically. Green, red, and infrared emissions centered at 550, 662, and 758 nm were obtained at 980 nm excitation. Yellow light from glass spheres can be easily observed by naked eyes. As Yb{sup 3+} concentration increases, the upconversion luminescence can be improved obviously. The upconversion luminescence mechanism is a two-photon process of energy transfer, excited state absorption, and energy back transfer. The emission intensity can be enhanced in the samples with high Yb{sup 3+} concentration, since the absorption for the incident laser and the energy transfer efficiency are increased, and the nonradiative relaxation probability is reduced. The light color referring to the ratio for red to green emissions can be tuned by Yb{sup 3+} concentration. Ho{sup 3+}/Yb{sup 3+} co-doped La{sub 2}O{sub 3}–TiO{sub 2}–ZrO{sub 2} glasses show promising comprehensive properties and are helpful to speed the application of upconversion luminescence materials. - Highlights: • Ho{sup 3+}/Yb{sup 3+} doped titanate glasses are prepared by containerless processing. • The effects of Yb{sup 3+} on thermal and mechanical properties have been studied. • High concentration of Yb{sup 3+} is favorable to upconversion luminescence. • The mechanisms are energy transfer, excited state absorption, energy back transfer.

  11. Long afterglow property of Er"3"+ doped Ca_2SnO_4 phosphor

    International Nuclear Information System (INIS)

    Zhang, Dongyun; Shi, Mingming; Sun, Yiwen; Guo, Yunyun; Chang, Chengkang

    2016-01-01

    A novel green emitting long afterglow phosphor, Er"3"+ -doped Ca_2SnO_4 (Ca_2SnO_4:Er"3"+), was prepared successfully via a traditional high temperature solid–state reaction method. Its properties have been characterized and analyzed by utilizing x-ray diffraction (XRD), photoluminescence spectroscope (PLS), afterglow decay curve (ADC) and thermal luminescence spectroscope (TLS). Three main emission peaks of PLS locate at 524, 550 and 668 nm, corresponding to CIE chromaticity coordinates of x = 0.326, y = 0.6592. An optimal doping concentration of Er"3"+ of 2% was determined. The Ca_2SnO_4:Er"3"+ phosphors showed a typical triple-exponential afterglow decay behavior when the UV source was switched off. Thermal simulated luminescence study indicated that the persistent afterglow of Ca_2SnO_4:2 mol% Er"3"+ phosphors was generated by the suitable electron or hole traps which were resulted from the doping the Ca_2SnO_4 host with rare-earth ions (Er"3"+). - Highlights: • A novel green emitting long afterglow phosphor, Ca_2SnO_4:Er"3"+, was prepared. • An optimal doping concentration of Er"3"+ of 2% was determined. • After the UV source was turned off, the Ca_2SnO_4:Er"3"+ showed a typical triple-exponential afterglow decay behavior. • CIE chromaticity coordinates results confirmed a green light emitting of the Ca_2SnO_4:Er"3"+. • The persistent afterglow of the Ca_2SnO_4:Er"3"+ was attributed to suitable electron or hole traps.

  12. Color-tunable and highly thermal stable Sr_2MgAl_2_2O_3_6:Tb"3"+ phosphors

    International Nuclear Information System (INIS)

    Zhang, Haiming; Zhang, Haoran; Liu, Yingliang; Lei, Bingfu; Deng, Jiankun; Liu, Wei-Ren; Zeng, Yuan; Zheng, Lingling; Zhao, Minyi

    2017-01-01

    Tb"3"+ activated Sr_2MgAl_2_2O_3_6 phosphor was prepared by a high-temperature solid-state reaction route. The X-ray diffraction, scanning electron microscopy, and photoluminescence spectroscopy were used to characterize the as-prepared samples. The Sr_2MgAl_2_2O_3_6:Tb"3"+ phosphors show intense green light emission under UV excitation. The phosphor exhibit two groups of emission lines from about 370 to 700 nm, which originating from the characteristic "5D_3-"7F_J and "5D_4-"7F_J transitions of the Tb"3"+ ion, respectively. The cross-relaxation mechanism between the "5D_3 and "5D_4 emission was investigated and discussed. The emission colors of these phosphors can be tuned from bluish-green to green by adjusting the Tb"3"+ doping concentration. Furthermore, the thermal quenching temperature (T_1_/_2) is higher than 500 K. The excellent thermal stability and color-tunable luminescent properties suggest that the developed material is a promising green-emitting phosphor candidate for optical devices. - Highlights: • A Color-tunable emitting phosphor Sr_2MgAl_2_2O_3_6:Tb"3"+ was prepared successfully via high-temperature solid-state reaction. • The photoluminescence of Sr_2MgAl_2_2O_3_6:Tb"3"+ shows highly thermal stable. • The cross-relaxation mechanism between the "5D_3 and "5D_4 emission was investigated and discussed.

  13. Tunable flux pinning landscapes achieved by functional ferromagnetic Fe2O3:CeO2 vertically aligned nanocomposites in YBa2Cu3O7−δ thin films

    International Nuclear Information System (INIS)

    Tsai, Chen-Fong; Huang, Jijie; Lee, Joon-Hwan; Khatkhatay, Fauzia; Chen, Li; Chen, Aiping; Su, Qing; Wang, Haiyan

    2015-01-01

    Highlights: • Functional ferromagnetic (Fe 2 O 3 ) x :(CeO 2 ) 1−x vertically aligned nanocomposites (VAN). • An ordered arrangement of ferromagnetic Fe 2 O 3 nanoinclusions. • Significant in-field improvement of J c (H//c) in both VAN nanolayer capped and buffered samples. • T c above 90 K and the J c sf maximized at 3.07 MA/cm 2 (75 K) and 9.2 MA/cm 2 (65 K) for 30% Fe 2 O 3 sample. - Abstract: Functional ferromagnetic (Fe 2 O 3 ) x :(CeO 2 ) 1−x vertically aligned nanocomposite (VAN) layers were deposited as either buffer or cap layers for YBa 2 Cu 3 O 7−δ (YBCO) thin films. The composition of Fe 2 O 3 dopants in the VAN nanolayers is controlled at 10%, 30% and 50% in order to create different arrangements of Fe 2 O 3 and CeO 2 nanopillars and therefore to tune the flux pining landscapes. The composition variation provides tunable and ordered arrangements of magnetic nanodopants and interfacial defects as pinning centers in the YBCO thin films. The superconducting property measurements show that most doped samples obtain a T c above 90 K and the J c sf measured at 75 K and 65 K maximized at 3.07 MA/cm 2 and 9.2 MA/cm 2 for 30% Fe 2 O 3 VAN doped sample. As the temperature decreased to 5 K, the sample with 50% Fe 2 O 3 VAN doped sample show the best pinning effect due to pronounced magnetic pinning effects. This work demonstrates the tunable density of magnetic pinning centers can be achieved by VAN to meet the specific pinning requirement

  14. Structural and superconducting properties of (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} grown by MOCVD on samarium zirconate buffered IBAD-MgO

    Energy Technology Data Exchange (ETDEWEB)

    Stan, L; Holesinger, T G; Maiorov, B; Feldmann, D M; Usov, I O; DePaula, R F; Civale, L; Foltyn, S R; Jia, Q X [Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Chen, Y; Selvamanickam, V [SuperPower, Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2008-10-01

    Textured samarium zirconate (SZO) films have been grown by reactive cosputtering directly on an ion beam assisted deposited (IBAD) MgO template, without an intermediate homoepitaxial MgO layer. The subsequent growth of 0.9 {mu}m thick (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} ((Y, Gd)BCO) films by metal organic chemical vapor deposition (MOCVD) yielded well textured films with a full width at half maximum of 1.9{sup 0} and 3.4{sup 0} for the out-of-plane and in-plane texture, respectively. Microstructural characterizations of the SZO buffered samples revealed clean interfaces. This indicates that the SZO not only provides a diffusion barrier, but also functions as a buffer for (Y, Gd)BCO grown by MOCVD. The achievement of self-field critical current densities (J{sub c}) of over 2 MA cm{sup -2} at 75.5 K is another proof of the effectiveness of SZO as a buffer on the IBAD-MgO template. The in-field measurements revealed an asymmetric angular dependence of J{sub c} and a shift of the ab-plane maxima due to the tilted nature of the template and (Y,Gd){sub 2}O{sub 3} particles existing in the (Y, Gd)BCO matrix. The present results are especially important because they demonstrate that high temperature superconducting coated conductors with simpler architecture can be fabricated using commercially viable processes.

  15. Defect phase diagram for doping of Ga2O3

    Science.gov (United States)

    Lany, Stephan

    2018-04-01

    For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2) conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

  16. Study of UO2-10WT%Gd2O3 fuel pellets obtained by seeding method using AUC co-precipitation and mechanical mixing processes

    International Nuclear Information System (INIS)

    Lima, M.M.F.; Ferraz, W.B.A.; Santos, M.M. dos; Pinto, L.C.M.; Santos, A.

    2008-01-01

    The use of gadolinium and uranium mixed oxide as a nuclear fuel aims to obtain a fuel with a performance better than that of UO 2 fuel. In this work, seeding method was used to improve ionic diffusivity during sintering to produce high density pellets containing coarse grains by co-precipitation and mechanical mixing processes. Sintered UO 2 -10 wt% Gd 2 O 3 pellets were obtained using the reference processes with 2 wt% and 5 wt% UO 2 seeds with two granulometries, less than 20 μm and between 20 and 38 μm. Characterisation was carried out by chemical analysis, surface area, X-ray diffraction, SEM, WDS, image analysis, and densitometry. The seeding method using mechanical mixing process was more effective than the co-precipitation method. Furthermore, mechanical mixing process resulted in an increase in density of UO 2 -10wt% Gd 2 O 3 with seeds in relation to that of UO 2 -10wt% Gd 2 O 3 without seeds. (author)

  17. Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure.

    Science.gov (United States)

    Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Jana, Surajit; Roy, Anisha; Singh, Kanishk; Cheng, Hsin-Ming; Chang, Mu-Tung; Mahapatra, Rajat; Chiu, Hsien-Chin; Yang, Jer-Ren

    2016-12-01

    A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdO x membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO x films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO x membrane, polycrystalline grain has lower energy gap and Gd(2+) oxidation states lead to change Gd(3+) states in the presence of H2O2, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO x membrane with higher Gd content are responsible for detecting H2O2 whereas both bare SiO2 and thinner GdO x membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H2O2 concentration from 1 to 200 μM owing to more generation of Gd(3+) ions, and the H2O2 sensing mechanism has been explained as well.

  18. Role of Gd{sup 3+} ion on downshifting and upconversion emission properties of Pr{sup 3+}, Yb{sup 3+} co-doped YNbO{sub 4} phosphor and sensitization effect of Bi{sup 3+} ion

    Energy Technology Data Exchange (ETDEWEB)

    Dwivedi, A.; Rai, S. B., E-mail: sbrai49@yahoo.co.in [Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Mishra, Kavita [Department of Physics, University of Lucknow, Lucknow 226007 (India)

    2016-07-28

    Dual-mode luminescence (downshifting-DS and upconversion-UC) properties of Pr{sup 3+}/Yb{sup 3+} co-doped Y{sub 1−x}Gd{sub x}NbO{sub 4} (x = 0.0, 0.5, and 1.0) phosphors synthesized by solid state reaction technique have been explored with and without Gd{sup 3+} ion. The structural characterizations (XRD, SEM, and FTIR) confirm the pure phase of YNbO{sub 4} phosphor. Further, with the Gd{sup 3+} ion co-doping, the YNbO{sub 4} phosphors having a random shape and the large particle size are found to be transformed into nearly spherical shape particles with the reduced particle size. The optical band gaps (E{sub g}) of Y{sub 1−x}Gd{sub x}NbO{sub 4} (x = 0.00, 0.25, 0.50, and 1.00) calculated from UV-Vis-NIR measurements are ∼3.69, 4.00, 4.38, and 4.44 eV, respectively. Moreover, YNbO{sub 4} phosphor is a promising blue emitting material, whereas Y{sub 1−x−y−z}Pr{sub y}Yb{sub z}Gd{sub x}NbO{sub 4} phosphor gives intense green, blue, and red emissions via dual-mode optical processes. The broad blue emission arises due to (NbO{sub 4}){sup 3−} group of the host with λ{sub ex} = 264 nm, whereas Pr{sup 3+} doped YNbO{sub 4} phosphor gives dominant red and blue emissions along with comparatively weak green emission on excitation with λ{sub ex} = 300 nm and 491 nm. The concentration dependent variation in emission intensity at 491 nm ({sup 3}P{sub 0}→{sup 3}H{sub 4} transition) and 612 nm ({sup 1}D{sub 2}→{sup 3}H{sub 4} transition); at 612 nm ({sup 1}D{sub 2}→{sup 3}H{sub 4} transition) and 658 nm ({sup 3}P{sub 0}→{sup 3}F{sub 2} transition) of Pr{sup 3+} ion in YNbO{sub 4} phosphor with λ{sub ex} = 300 nm and 491 nm excitations, respectively, has been thoroughly explored and explained by the cross-relaxation process through different channels. The sensitization effect of Bi{sup 3+} ion co-doping on DS properties of the phosphor has also been studied. The observed DS results have been optimized by varying the

  19. Thermoluminescence and optically stimulated luminescence properties of Dy3+-doped CaO-Al2O3-B2O3-based glasses

    Science.gov (United States)

    Yahaba, T.; Fujimoto, Y.; Yanagida, T.; Koshimizu, M.; Tanaka, H.; Saeki, K.; Asai, K.

    2017-02-01

    We developed Dy3+-doped CaO-Al2O3-B2O3 based glasses with Dy concentrations of 0.5, 1.0, and 2.0 mol% using a melt-quenching technique. The as-synthesized glasses were applicable as materials exhibiting thermoluminescence (TL) and optically stimulated luminescence (OSL). The optical and radiation response properties of the glasses were characterized. In the photoluminescence (PL) spectra, two emission bands due to the 4F9/2 → 6H15/2 and 4F9/2 → 6H13/2 transitions of Dy3+ were observed at 480 and 580 nm. In the OSL spectra, the emission band due to the 4F9/2 → 6H15/2 transition of Dy3+ was observed. Excellent TL and OSL responses were observed for dose ranges of 0.1-90 Gy. In addition, TL fading behavior was better than that of OSL in term of the long-time storage. These results indicate that the Dy3+-doped CaO-Al2O3-B2O3-based glasses are applicable as TL materials.

  20. Reaction kinetics of H{sub 2}, O{sub 2}, and H{sub 2}O with rare earths (Y, La, Ce, Pr, Nd, Gd, Tb, Dy, and Er) at 298 K

    Energy Technology Data Exchange (ETDEWEB)

    Enomoto, M.; Ohata, Y. [Course of Applied Science, Graduate School of Engineering, Tokai University, 4-1-1 Kita-Kaname, Hiratsuka, Kanagawa 259-1292 (Japan); Uchida, H., E-mail: huchida@keyaki.cc.u-tokai.ac.jp [Course of Applied Science, Graduate School of Engineering, Tokai University, 4-1-1 Kita-Kaname, Hiratsuka, Kanagawa 259-1292 (Japan)

    2013-12-15

    Highlights: ► H{sub 2} molecules react with a clean surface of each RE sample at the highest reactivity even at 298 K. ► The H{sub 2} reactivity becomes reduced by the formation of dihydrides of each RE sample. ► The RE with a clean surface adsorb O{sub 2} more than one monolayer of O{sub 2} even at 298 K. ► The quantitative reactivity of the H atoms dissociated from H{sub 2}O was calculated. -- Abstract: High reactivity of rare earths (RE) with H{sub 2}, O{sub 2} and H{sub 2}O is well known even at room temperature. The formation of stable surface oxides/hydroxides on the surface is the one of serious problems in the production and use of materials containing RE. We have investigated the quantitative reactivities of H{sub 2}, O{sub 2}, and H{sub 2}O with the surface of Y, La, Ce, Pr, Nd, Gd, Tb, Dy, and Er under ultra high vacuum condition. The H{sub 2}, O{sub 2} and H{sub 2}O gases exhibited the highest reactivity on the clean surface of the RE at 298 K. This means that all gas molecules impinging the surface dissociate and chemisorbed. The O atoms dissociated from O{sub 2} adsorb to for oxides layers of the metals. The H atoms dissociated from H{sub 2} diffuse into the metals to form hydrides which were found to decrease the H{sub 2} reactivity. The H atoms dissociated form H{sub 2}O diffuse into the metals or form hydroxides of the metals. With increasing coverage of each gas molecules, the reactivity of each gas was decreased by several orders of magnitude.