WorldWideScience

Sample records for gate oxide integrity

  1. Impact of metal-ion contaminated silica particles on gate oxide integrity

    NARCIS (Netherlands)

    Rink, Ingrid; Wali, F.; Knotter, D.M.

    2009-01-01

    The impact of metal-ion contamination (present on wafer surface before oxidation) on gate oxide integrity (GOI) is well known in literature, which is not the case for clean silica particles [1, 2]. However, it is known that particles present in ultra-pure water (UPW) decrease the random yield in

  2. Effect of weak metallic contamination on silicon epitaxial layer and gate oxide integrity

    Energy Technology Data Exchange (ETDEWEB)

    Mello, D.; Coccorese, C.; Ferlito, E.; Sciuto, G.; Ricciari, R.; Barbarino, P.; Astuto, M. [STMicroelectronics, Physics Lab. Stradale primosole, 50 I-95121 Catania (Italy)

    2011-08-15

    The detection of metallic contaminants in microelectronics devices is one of the main issues in production line. In fact they could diffuse rapidly into the silicon bulk and establishing energy states into the silicon energy-band gap. The presence of trace of metals on the silicon surface can also degrade the gate oxide integrity, cause structural defect in silicon epitaxial layers or anomalies in silicon/gate oxide interface. Usually in semiconductor manufacturing superficial metallic contamination is monitored using Total X-ray Reflection Fluorescence spectroscopy (TXRF) and performing specific electrical measurements on dedicated capacitor. In this work a weak contamination, undetected by TXRF analysis, was revealed by Transmission Electron Microscopy (TEM) observing lattice damaging and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) detecting an anomalous Na distribution in depth profile. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Ultrafast, high precision gated integrator

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.

    1995-01-01

    An ultrafast, high precision gated integrator has been developed by introducing new design approaches that overcome the problems associated with earlier gated integrator circuits. The very high speed is evidenced by the output settling time of less than 50 ns and 20 MHz input pulse rate. The very high precision is demonstrated by the total output offset error of less than 0.2mV and the output droop rate of less than 10{mu}V/{mu}s. This paper describes the theory of this new gated integrator circuit operation. The completed circuit test results are presented.

  4. Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

    Science.gov (United States)

    Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

    2016-08-24

    Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

  5. Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor.

    Science.gov (United States)

    Han, Jin-Woo; Rim, Taiuk; Baek, Chang-Ki; Meyyappan, M

    2015-09-30

    Gas sensors based on metal-oxide-semiconductor transistor with the polysilicon gate replaced by a gas sensitive thin film have been around for over 50 years. These are not suitable for the emerging mobile and wearable sensor platforms due to operating voltages and powers far exceeding the supply capability of batteries. Here we present a novel approach to decouple the chemically sensitive region from the conducting channel for reducing the drive voltage and increasing reliability. This chemically gated field effect transistor uses silicon nanowire for the current conduction channel with a tin oxide film on top of the nanowire serving as the gas sensitive medium. The potential change induced by the molecular adsorption and desorption allows the electrically floating tin oxide film to gate the silicon channel. As the device is designed to be normally off, the power is consumed only during the gas sensing event. This feature is attractive for the battery operated sensor and wearable electronics. In addition, the decoupling of the chemical reaction and the current conduction regions allows the gas sensitive material to be free from electrical stress, thus increasing reliability. The device shows excellent gas sensitivity to the tested analytes relative to conventional metal oxide transistors and resistive sensors.

  6. Engineering integrated photonics for heralded quantum gates.

    Science.gov (United States)

    Meany, Thomas; Biggerstaff, Devon N; Broome, Matthew A; Fedrizzi, Alessandro; Delanty, Michael; Steel, M J; Gilchrist, Alexei; Marshall, Graham D; White, Andrew G; Withford, Michael J

    2016-06-10

    Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

  7. Double gated-integrator for shaping nuclear radiation detector signals

    International Nuclear Information System (INIS)

    Gal, J.

    2001-01-01

    A new shaper, the double gated-integrator, for shaping nuclear radiation detector signals is investigated both theoretically and experimentally. The double gated-integrator consists of a pre-filter and two cascaded gated integrators. Two kinds of pre-filters were considered: a rectangular one and an exponential one. The results of the theoretical calculation show that the best figure of demerit for the double gated-integrator with exponential pre-filter is 1.016. This means that its noise to signal ratio is only 1.6% worse than that it is for infinite cusp shaping. The practical realization of the exponential pre-filter and that of the double gated integrator, both in analogue and in digital way, is very simple. Therefore, the double gated-integrator with exponential pre-filter could be a promising solution for shaping nuclear radiation detector signals

  8. A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation

    International Nuclear Information System (INIS)

    Kim, Sang Gi; Kah, Dong Ha; Na, Kyoung Il; Yang, Yil Suk; Koo, Jin Gun; Kim, Jong Dae; Lee, Jin Ho; Park, Hoon Soo

    2012-01-01

    Gate dielectrics in trench structures for trench gate metal oxide semiconductor field-effect transistor (MOSFET) power devices are very important to realize excellent characteristics. In this paper we describe multiple-layer gate dielectrics for trench gate MOSFETs with both thermal and chemical vapor deposition (CVD) gate oxides that exhibit excellent gate oxide properties and surface roughness. Through various trench etching experiments for better surface conditions in the trench, the optimum etching gas chemistry and etch conditions were found. The destruction of gate dielectric in trench gate MOSFET occurs at the top and the bottom trench corner edges. The structure of the gate electrode is pulled out with the polysilicon layer which is buried in the trench. Thus, high electric field operation is inevitable at the gate between source diffusion and the gate polysilicon. Moreover, the trench corner oxide suffers from the high electric field. We propose a multiple-gate dielectric structure of a thermal oxide and CVD oxide for highly reliable operation of the device. This enables trench surface smoothing and low thermal stress at the trench corners and provides the oxide thickness uniformity, giving superior device characteristics of high breakdown voltage and low leakage current. These improvements are caused by the excellent quality of the gate oxide and the good thickness uniformity that is formed at the inner trench with a specific geometrical factor.

  9. Localization and characterization of ultra thin gate oxide breakdown regions

    NARCIS (Netherlands)

    Akil, N.A.; Le Minh, P.; Holleman, J.; Houtsma, V.E.; Woerlee, P.H.

    2000-01-01

    Nano-scale diodes were formed after intentional gate oxide breakdown of n+ –olysilicon/oxide/p+ –ubstrate MOS capacitors by Fowler-Nordheim constant current injection. The nano-scale diodes called diode-antifuses are created by the formation of a small link through the oxide between the n+ –oly and

  10. Integration of biomolecular logic gates with field-effect transducers

    International Nuclear Information System (INIS)

    Poghossian, A.; Malzahn, K.; Abouzar, M.H.; Mehndiratta, P.; Katz, E.; Schoening, M.J.

    2011-01-01

    Highlights: → Enzyme-based AND/OR logic gates are integrated with a capacitive field-effect sensor. → The AND/OR logic gates compose of multi-enzyme system immobilised on sensor surface. → Logic gates were activated by different combinations of chemical inputs (analytes). → The logic output (pH change) produced by the enzymes was read out by the sensor. - Abstract: The integration of biomolecular logic gates with field-effect devices - the basic element of conventional electronic logic gates and computing - is one of the most attractive and promising approaches for the transformation of biomolecular logic principles into macroscopically useable electrical output signals. In this work, capacitive field-effect EIS (electrolyte-insulator-semiconductor) sensors based on a p-Si-SiO 2 -Ta 2 O 5 structure modified with a multi-enzyme membrane have been used for electronic transduction of biochemical signals processed by enzyme-based OR and AND logic gates. The realised OR logic gate composes of two enzymes (glucose oxidase and esterase) and was activated by ethyl butyrate or/and glucose. The AND logic gate composes of three enzymes (invertase, mutarotase and glucose oxidase) and was activated by two chemical input signals: sucrose and dissolved oxygen. The developed integrated enzyme logic gates produce local pH changes at the EIS sensor surface as a result of biochemical reactions activated by different combinations of chemical input signals, while the pH value of the bulk solution remains unchanged. The pH-induced charge changes at the gate-insulator (Ta 2 O 5 ) surface of the EIS transducer result in an electronic signal corresponding to the logic output produced by the immobilised enzymes. The logic output signals have been read out by means of a constant-capacitance method.

  11. Integration of biomolecular logic gates with field-effect transducers

    Energy Technology Data Exchange (ETDEWEB)

    Poghossian, A., E-mail: a.poghossian@fz-juelich.de [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Institute of Bio- and Nanosystems, Research Centre Juelich GmbH, D-52425 Juelich (Germany); Malzahn, K. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Abouzar, M.H. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Institute of Bio- and Nanosystems, Research Centre Juelich GmbH, D-52425 Juelich (Germany); Mehndiratta, P. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Katz, E. [Department of Chemistry and Biomolecular Science, NanoBio Laboratory (NABLAB), Clarkson University, Potsdam, NY 13699-5810 (United States); Schoening, M.J. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Campus Juelich, Heinrich-Mussmann-Str. 1, D-52428 Juelich (Germany); Institute of Bio- and Nanosystems, Research Centre Juelich GmbH, D-52425 Juelich (Germany)

    2011-11-01

    Highlights: > Enzyme-based AND/OR logic gates are integrated with a capacitive field-effect sensor. > The AND/OR logic gates compose of multi-enzyme system immobilised on sensor surface. > Logic gates were activated by different combinations of chemical inputs (analytes). > The logic output (pH change) produced by the enzymes was read out by the sensor. - Abstract: The integration of biomolecular logic gates with field-effect devices - the basic element of conventional electronic logic gates and computing - is one of the most attractive and promising approaches for the transformation of biomolecular logic principles into macroscopically useable electrical output signals. In this work, capacitive field-effect EIS (electrolyte-insulator-semiconductor) sensors based on a p-Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure modified with a multi-enzyme membrane have been used for electronic transduction of biochemical signals processed by enzyme-based OR and AND logic gates. The realised OR logic gate composes of two enzymes (glucose oxidase and esterase) and was activated by ethyl butyrate or/and glucose. The AND logic gate composes of three enzymes (invertase, mutarotase and glucose oxidase) and was activated by two chemical input signals: sucrose and dissolved oxygen. The developed integrated enzyme logic gates produce local pH changes at the EIS sensor surface as a result of biochemical reactions activated by different combinations of chemical input signals, while the pH value of the bulk solution remains unchanged. The pH-induced charge changes at the gate-insulator (Ta{sub 2}O{sub 5}) surface of the EIS transducer result in an electronic signal corresponding to the logic output produced by the immobilised enzymes. The logic output signals have been read out by means of a constant-capacitance method.

  12. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

    Science.gov (United States)

    Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

    2018-04-01

    Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

  13. Impact of oxide thickness on gate capacitance – Modelling and ...

    Indian Academy of Sciences (India)

    approaches the nanometer regime, the oxide capacitance Cox becomes comparable to the inversion layer capacitance Cinv which means that the quantum capacitance CQ and the centroid capacitance Ccent start to affect the gate capacitance [8]. The centroid capacitance. Ccent is related to the average physical distance ...

  14. Charging damage to gate oxides in an O2 magnetron plasma

    Science.gov (United States)

    Fang, Sychyi; McVittie, James P.

    1992-11-01

    A model is developed to explain how plasma etching/ashing can damage gate covered oxides via plasma nonuniformity. In addition, the role of antenna structure parameters on this damage is examined. Plasma nonuniformity leads to a local imbalance between electron and ion currents from the plasma. This imbalance of local particle currents from the plasma leads to gate charging and subsequent thin oxide degradation. This article discusses a sheath model for this charging where measurements of plasma potential nonuniformity are used to calculate the peak surface charging potential and subsequent thin oxide tunneling current. It is this oxide tunneling current that generates the surface states at the Si/SiO2 interface and the trapped charge in the oxide that degrades oxide yield and reliability. This model is applied to analyze oxide damage in an O2 magnetron plasma, via the simulation program with integrated circuits emphasis, Langmuir probe measurements, and antenna capacitor breakdown measurements. The oxide current derived from this model shows good agreement with experimental damage data of antenna capacitors. Finally, oxide damage is shown to depend on antenna structure parameters and is explained by this model.

  15. Two-dimensional analytical model for hetero-junction double-gate tunnel field-effect transistor with a stacked gate-oxide structure

    Science.gov (United States)

    Xu, Hui Fang; Gui Guan, Bang

    2017-05-01

    A two-dimensional analytical model for hetero-junction double-gate tunnel FETs (DG TFETs) with a stacked gate-oxide structure is proposed in this paper. The effects of both the channel mobile charges and source/drain depletion regions on the channel potential profile are considered for the higher accuracy of the proposed model. Poisson’s equation is solved using the superposition principle and Fourier series solution to model the channel potential. The band-to-band tunneling generation rate is expressed as a function of the channel electric field derived from the channel potential and then integrated analytically to derive the drain current of the hetero-junction DG TFETs with a stacked gate-oxide structure using the shortest tunneling path. The effects of device parameters on the channel potential, drain current, and transconductance are investigated. Very good agreements are observed between the model calculations and the simulated results.

  16. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.

    2010-11-19

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  17. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  18. Graphene-graphene oxide floating gate transistor memory.

    Science.gov (United States)

    Jang, Sukjae; Hwang, Euyheon; Lee, Jung Heon; Park, Ho Seok; Cho, Jeong Ho

    2015-01-21

    A novel transparent, flexible, graphene channel floating-gate transistor memory (FGTM) device is fabricated using a graphene oxide (GO) charge trapping layer on a plastic substrate. The GO layer, which bears ammonium groups (NH3+), is prepared at the interface between the crosslinked PVP (cPVP) tunneling dielectric and the Al2 O3 blocking dielectric layers. Important design rules are proposed for a high-performance graphene memory device: (i) precise doping of the graphene channel, and (ii) chemical functionalization of the GO charge trapping layer. How to control memory characteristics by graphene doping is systematically explained, and the optimal conditions for the best performance of the memory devices are found. Note that precise control over the doping of the graphene channel maximizes the conductance difference at a zero gate voltage, which reduces the device power consumption. The proposed optimization via graphene doping can be applied to any graphene channel transistor-type memory device. Additionally, the positively charged GO (GO-NH3+) interacts electrostatically with hydroxyl groups of both UV-treated Al2 O3 and PVP layers, which enhances the interfacial adhesion, and thus the mechanical stability of the device during bending. The resulting graphene-graphene oxide FGTMs exhibit excellent memory characteristics, including a large memory window (11.7 V), fast switching speed (1 μs), cyclic endurance (200 cycles), stable retention (10(5) s), and good mechanical stability (1000 cycles). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  20. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures.

    Science.gov (United States)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-06-25

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter.

  1. Multi-channel normal speed gated integrator in the measurement of the laser scattering light energy

    International Nuclear Information System (INIS)

    Yang Dong; Yu Xiaoqi; Hu Yuanfeng

    2005-01-01

    With the method of integration in a limited time, a Multi-channel normal speed gated integrator based on VXI system has been developed for measuring the signals with changeable pulse width in laser scattering light experiment. It has been tested with signal sources in ICF experiment. In tests, the integral nonlinearity between the integral results of the gated integrator and that of an oscilloscope is less than 1%. In the ICF experiments the maximum error between the integral results of the gated integrator and that of oscilloscope is less than 3% of the full scale range of the gated integrator. (authors)

  2. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-03-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  3. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

    2016-01-01

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project....... The presented research is based on this sensor structure and investigates its potential as a versatile biomarker detection platform by evaluating different functionalization approaches. The functionalization of the silicon sensor surface with organic molecules was investigated in detail to determine...... the suitability of different methods for the preparation of organic interfaces for protein attachment. Oxide-free silicon surfaces offer unique possibilities to create highly sensitive sensor surfaces for charge detection due to the lack of an insulating oxide layer, but the highly reactive surface presents...

  4. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project....... The presented research is based on this sensor structure and investigates its potential as a versatile biomarker detection platform by evaluating different functionalization approaches. The functionalization of the silicon sensor surface with organic molecules was investigated in detail to determine...... the suitability of different methods for the preparation of organic interfaces for protein attachment. Oxide-free silicon surfaces offer unique possibilities to create highly sensitive sensor surfaces for charge detection due to the lack of an insulating oxide layer, but the highly reactive surface presents...

  5. Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxide

    International Nuclear Information System (INIS)

    Li, W.S.; Wu, Bill; Fan, Aki; Kuo, C.W.; Segovia, M.; Kek, H.A.

    2005-01-01

    Nitrogen concentration in the gate oxide plays a key role for 90 nm and below ULSI technology. Techniques like secondary ionization mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) are commonly used for understanding N concentration. This paper describes the application of the carrier illuminationTM (CI) technique to measure the nitrogen concentration in ultra-thin gate oxides. A set of ultra-thin gate oxide wafers with different DPN (decoupled plasma nitridation) treatment conditions were measured using the CI technique. The CI signal has excellent correlation with the N concentration as measured by XPS

  6. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    Science.gov (United States)

    Long, Rathnait D.; McIntyre, Paul C.

    2012-01-01

    The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS) devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  7. Modelling ionising radiation induced defect generation in bipolar oxides with gated diodes

    International Nuclear Information System (INIS)

    Barnaby, H.J.; Cirba, C.; Schrimpf, R.D.; Kosier, St.; Fouillat, P.; Montagner, X.

    1999-01-01

    Radiation-induced oxide defects that degrade electrical characteristics of bipolar junction transistor (BJTs) can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation. (authors)

  8. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  9. Gated integrator PXI-DAQ system for Thomson scattering diagnostics

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Kiran, E-mail: kkpatel@ipr.res.in; Pillai, Vishal; Singh, Neha; Thomas, Jinto; Kumar, Ajai

    2017-06-15

    Gated Integrator (GI) PXI based data acquisition (DAQ) system has been designed and developed for the ease of acquiring fast Thomson Scattered signals (∼50 ns pulse width). The DAQ system consists of in-house designed and developed GI modules and PXI-1405 chassis with several PXI-DAQ modules. The performance of the developed system has been validated during the SST-1 campaigns. The dynamic range of the GI module depends on the integrating capacitor (C{sub i}) and the modules have been calibrated using 12 pF and 27 pF integrating capacitors. The developed GI module based data acquisition system consists of sixty four channels for simultaneous sampling using eight PXI based digitization modules having eight channels per module. The error estimation and functional tests of this unit are carried out using standard source and also with the fast detectors used for Thomson scattering diagnostics. User friendly Graphical User Interface (GUI) has been developed using LabVIEW on Windows platform to control and acquire the Thomson scattering signal. A robust, easy to operate and maintain with low power consumption, having higher dynamic range with very good sensitivity and cost effective DAQ system is developed and tested for the SST-1 Thomson scattering diagnostics.

  10. Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

    International Nuclear Information System (INIS)

    Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun

    2013-01-01

    Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al 2 O 3 ) on a graphene channel through nitrogen plasma treatment. The deposited Al 2 O 3 thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al 2 O 3 as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics

  11. An Integrated Gate Turnaround Management Concept Leveraging Big Data/Analytics for NAS Performance Improvements

    Science.gov (United States)

    Chung, William; Chachad, Girish; Hochstetler, Ronald

    2016-01-01

    The Integrated Gate Turnaround Management (IGTM) concept was developed to improve the gate turnaround performance at the airport by leveraging relevant historical data to support optimization of airport gate operations, which include: taxi to the gate, gate services, push back, taxi to the runway, and takeoff, based on available resources, constraints, and uncertainties. By analyzing events of gate operations, primary performance dependent attributes of these events were identified for the historical data analysis such that performance models can be developed based on uncertainties to support descriptive, predictive, and prescriptive functions. A system architecture was developed to examine system requirements in support of such a concept. An IGTM prototype was developed to demonstrate the concept using a distributed network and collaborative decision tools for stakeholders to meet on time pushback performance under uncertainties.

  12. Transcap: A new integrated hybrid supercapacitor and electrolyte-gated transistor device (Presentation Recording)

    Science.gov (United States)

    Santato, Clara

    2015-10-01

    The boom in multifunctional, flexible, and portable electronics and the increasing need of low-energy cost and autonomy for applications ranging from wireless sensor networks for smart environments to biomedical applications are triggering research efforts towards the development of self-powered sustainable electronic devices. Within this context, the coupling of electronic devices (e.g. sensors, transistors) with small size energy storage systems (e.g. micro-batteries or micro-supercapacitors) is actively pursued. Micro-electrochemical supercapacitors are attracting much attention in electronics for their capability of delivering short power pulses with high stability over repeated charge/discharge cycling. For their high specific pseudocapacitance, electronically conducting polymers are well known as positive materials for hybrid supercapacitors featuring high surface carbon negative electrodes. The processability of both polymer and carbon is of great relevance for the development of flexible miniaturised devices. Electronically conducting polymers are even well known to feature an electronic conductivity that depends on their oxidation (p-doped state) and that it is modulated by the polymer potential. This property and the related pseudocapacitive response make polymer very attracting channel materials for electrolyte-gated (EG) transistors. Here, we propose a novel concept of "Trans-capacitor", an integrated device that exhibits the storage properties of a polymer/carbon hybrid supercapacitor and the low-voltage operation of an electrolyte-gated transistor.

  13. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  14. Long-Term Synaptic Plasticity Emulated in Modified Graphene Oxide Electrolyte Gated IZO-Based Thin-Film Transistors.

    Science.gov (United States)

    Yang, Yi; Wen, Juan; Guo, Liqiang; Wan, Xiang; Du, Peifu; Feng, Ping; Shi, Yi; Wan, Qing

    2016-11-09

    Emulating neural behaviors at the synaptic level is of great significance for building neuromorphic computational systems and realizing artificial intelligence. Here, oxide-based electric double-layer (EDL) thin-film transistors were fabricated using 3-triethoxysilylpropylamine modified graphene oxide (KH550-GO) electrolyte as the gate dielectrics. Resulting from the EDL effect and electrochemical doping between mobile protons and the indium-zinc-oxide channel layer, long-term synaptic plasticity was emulated in our devices. Synaptic functions including long-term memory, synaptic temporal integration, and dynamic filters were successfully reproduced. In particular, spike rate-dependent plasticity (SRDP), one of the basic learning rules of long-term plasticity in the neural network where the synaptic weight changes according to the rate of presynaptic spikes, was emulated in our devices. Our results may facilitate the development of neuromorphic computational systems.

  15. Impact of oxide thickness on gate capacitance – Modelling and ...

    Indian Academy of Sciences (India)

    of oxide thickness. The obtained threshold voltage is characteristic with the variation of oxide thickness and is in good agreement with the experimental results obtained by Bera et al [15]. Then, eq. (17) is plotted in MATLAB by using the necessary parameter values for. AlInN/GaN and AlGaN/GaN MOSHEMT to graphically ...

  16. The effects of various gate oxidation conditions on intrinsic and radiation-induced extrinsic charged defects and neutral electron traps

    International Nuclear Information System (INIS)

    Walters, M.; Reisman, A.

    1990-01-01

    In this paper the influence of the oxidation temperature, ambient atmosphere, and oxidation rate on intrinsic and Al Kα x-ray radiation-induced extrinsic gate oxide defect levels in insulated-gate field effect transistors (IGFETs) is studied. Using optically assisted electron injection into n-channel polysilicon-gated IGFETs, neutral electron trap and fixed negative charge defect densities were measured, in addition to the fixed positive charge density. The results indicate that radiation-induced defect densities in the gate oxide decrease with increasing oxidation temperature in the 800 degrees C to 1000 degrees C range, and are lower for dry/wet/dry oxides than for dry oxides when the oxidation temperature is below 950 degrees C, but higher when the oxidation temperature is above 950 degrees C. The oxidation rate had no effect on defect levels in dry oxides grown at 1000 degrees CX, while at an oxidation temperature of 800 degrees C, the extrinsic defect densities were observed to increase when the oxidation rate was decreased. In all cases, the radiation-induced fixed positive charge and neutral electron trap defect densities were observed to be dependent upon the gate oxidation conditions in the same fashion

  17. Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

    Directory of Open Access Journals (Sweden)

    Yi Zhao

    2012-08-01

    Full Text Available High permittivity (k gate dielectric films are widely studied to substitute SiO2 as gate oxides to suppress the unacceptable gate leakage current when the traditional SiO2 gate oxide becomes ultrathin. For high-k gate oxides, several material properties are dominantly important. The first one, undoubtedly, is permittivity. It has been well studied by many groups in terms of how to obtain a higher permittivity for popular high-k oxides, like HfO2 and La2O3. The second one is crystallization behavior. Although it’s still under the debate whether an amorphous film is definitely better than ploy-crystallized oxide film as a gate oxide upon considering the crystal boundaries induced leakage current, the crystallization behavior should be well understood for a high-k gate oxide because it could also, to some degree, determine the permittivity of the high-k oxide. Finally, some high-k gate oxides, especially rare earth oxides (like La2O3, are not stable in air and very hygroscopic, forming hydroxide. This topic has been well investigated in over the years and significant progresses have been achieved. In this paper, I will intensively review the most recent progresses of the experimental and theoretical studies for preparing higher-k and more stable, in terms of hygroscopic tolerance and crystallization behavior, Hf- and La-based ternary high-k gate oxides.

  18. Ternary rare-earth based alternative gate-dielectrics for future integration in MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, Juergen; Lopes, Joao Marcelo; Durgun Oezben, Eylem; Luptak, Roman; Lenk, Steffi; Zander, Willi; Roeckerath, Martin [IBN 1-IT, Forschungszentrum Juelich, 52425 Juelich (Germany)

    2009-07-01

    The dielectric SiO{sub 2} has been the key to the tremendous improvements in Si-based metal-oxide-semiconductor (MOS) device performance over the past four decades. It has, however, reached its limit in terms of scaling since it exhibits a leakage current density higher than 1 A/cm{sup 2} and does not retain its intrinsic physical properties at thicknesses below 1.5 nm. In order to overcome these problems and keep Moore's law ongoing, the use of higher dielectric constant (k) gate oxides has been suggested. These high-k materials must satisfy numerous requirements such as the high k, low leakage currents, suitable band gap und offsets to silicon. Rare-earth based dielectrics are promising materials which fulfill these needs. We will review the properties of REScO{sub 3} (RE = La, Dy, Gd, Sm, Tb) and LaLuO{sub 3} thin films, grown with pulsed laser deposition, e-gun evaporation or molecular beam deposition, integrated in capacitors and transistors. A k > 20 for the REScO{sub 3} (RE = Dy, Gd) and around 30 for (RE = La, Sm, Tb) and LaLuO{sub 3} are obtained. Transistors prepared on SOI and sSOI show mobility values up to 380 cm{sup 2}/Vs on sSOI, which are comparable to such prepared with HfO{sub 2}.

  19. Characterization, integration and reliability of HfO{sub 2} and LaLuO{sub 3} high-κ/metal gate stacks for CMOS applications

    Energy Technology Data Exchange (ETDEWEB)

    Nichau, Alexander

    2013-07-15

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO{sub 3} and HfO{sub 2} are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO{sub 3} and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO{sub 3} is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO{sub 3} on germanium, germanate formation is shown. LaLuO{sub 3} is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO{sub 3} in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO{sub 3} and HfO{sub 2}. Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO{sub 2} gate stacks is scalable below 1 nm by the use of thinned interfacial SiO{sub 2}. The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the

  20. Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications

    International Nuclear Information System (INIS)

    Nichau, Alexander

    2013-01-01

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO 3 and HfO 2 are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO 3 and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO 3 is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO 3 on germanium, germanate formation is shown. LaLuO 3 is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO 3 in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO 3 and HfO 2 . Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO 2 gate stacks is scalable below 1 nm by the use of thinned interfacial SiO 2 . The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the gate electrode to decrease the EOT of HfO 2 gate stacks

  1. Poly-Si TFTs integrated gate driver circuit with charge-sharing structure

    Science.gov (United States)

    Chen, Meng; Lei, Jiefeng; Huang, Shengxiang; Liao, Congwei; Deng, Lianwen

    2017-06-01

    A p-type low-temperature poly-Si thin film transistors (LTPS TFTs) integrated gate driver using 2 non-overlapped clocks is proposed. This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects. It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period. The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases. The proposed gate driver shows a simple circuit, as only 6 TFTs and 1 capacitor are used for single-stage, and the buffer TFT is used for both pulling-down and pulling-up of output electrode. Feasibility of the proposed gate driver is proven through detailed analyses. Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than 0.8 pF, and pulse of gate driver outputs can be reduced to 5 μs. The proposed gate driver can still function properly with positive {V}{TH} shift within 0.4 V and negative {V}{TH} shift within -1.2 V and it is robust and promising for high-resolution display. Project supported by the Science and Technology Project of Hunan Province, China (No. 2015JC3401)

  2. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  3. Oxide-based synaptic transistors gated by solution-processed gelatin electrolytes

    Science.gov (United States)

    He, Yinke; Sun, Jia; Qian, Chuan; Kong, Ling-An; Gou, Guangyang; Li, Hongjian

    2017-04-01

    In human brain, a large number of neurons are connected via synapses. Simulation of the synaptic behaviors using electronic devices is the most important step for neuromorphic systems. In this paper, proton conducting gelatin electrolyte-gated oxide field-effect transistors (FETs) were used for emulating synaptic functions, in which the gate electrode is regarded as pre-synaptic neuron and the channel layer as the post-synaptic neuron. In analogy to the biological synapse, a potential spike can be applied at the gate electrode and trigger ionic motion in the gelatin electrolyte, which in turn generates excitatory post-synaptic current (EPSC) in the channel layer. Basic synaptic behaviors including spike time-dependent EPSC, paired-pulse facilitation (PPF), self-adaptation, and frequency-dependent synaptic transmission were successfully mimicked. Such ionic/electronic hybrid devices are beneficial for synaptic electronics and brain-inspired neuromorphic systems.

  4. Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator.

    Science.gov (United States)

    Kornijcuk, Vladimir; Lim, Hyungkwang; Seok, Jun Yeong; Kim, Guhyun; Kim, Seong Keun; Kim, Inho; Choi, Byung Joon; Jeong, Doo Seok

    2016-01-01

    The artificial spiking neural network (SNN) is promising and has been brought to the notice of the theoretical neuroscience and neuromorphic engineering research communities. In this light, we propose a new type of artificial spiking neuron based on leaky integrate-and-fire (LIF) behavior. A distinctive feature of the proposed FG-LIF neuron is the use of a floating-gate (FG) integrator rather than a capacitor-based one. The relaxation time of the charge on the FG relies mainly on the tunnel barrier profile, e.g., barrier height and thickness (rather than the area). This opens up the possibility of large-scale integration of neurons. The circuit simulation results offered biologically plausible spiking activity (field-effect transistor. The FG-LIF neuron also has the advantage of low operation power (<30 pW/spike). Finally, the proposed circuit was subject to possible types of noise, e.g., thermal noise and burst noise. The simulation results indicated remarkable distributional features of interspike intervals that are fitted to Gamma distribution functions, similar to biological neurons in the neocortex.

  5. An Integrated Gate Turnaround Management Concept Leveraging Big Data Analytics for NAS Performance Improvements

    Science.gov (United States)

    Chung, William W.; Ingram, Carla D.; Ahlquist, Douglas Kurt; Chachad, Girish H.

    2016-01-01

    "Gate Turnaround" plays a key role in the National Air Space (NAS) gate-to-gate performance by receiving aircraft when they reach their destination airport, and delivering aircraft into the NAS upon departing from the gate and subsequent takeoff. The time spent at the gate in meeting the planned departure time is influenced by many factors and often with considerable uncertainties. Uncertainties such as weather, early or late arrivals, disembarking and boarding passengers, unloading/reloading cargo, aircraft logistics/maintenance services and ground handling, traffic in ramp and movement areas for taxi-in and taxi-out, and departure queue management for takeoff are likely encountered on the daily basis. The Integrated Gate Turnaround Management (IGTM) concept is leveraging relevant historical data to support optimization of the gate operations, which include arrival, at the gate, departure based on constraints (e.g., available gates at the arrival, ground crew and equipment for the gate turnaround, and over capacity demand upon departure), and collaborative decision-making. The IGTM concept provides effective information services and decision tools to the stakeholders, such as airline dispatchers, gate agents, airport operators, ramp controllers, and air traffic control (ATC) traffic managers and ground controllers to mitigate uncertainties arising from both nominal and off-nominal airport gate operations. IGTM will provide NAS stakeholders customized decision making tools through a User Interface (UI) by leveraging historical data (Big Data), net-enabled Air Traffic Management (ATM) live data, and analytics according to dependencies among NAS parameters for the stakeholders to manage and optimize the NAS performance in the gate turnaround domain. The application will give stakeholders predictable results based on the past and current NAS performance according to selected decision trees through the UI. The predictable results are generated based on analysis of the

  6. Improving pH sensitivity by field-induced charge regulation in flexible biopolymer electrolyte gated oxide transistors

    Science.gov (United States)

    Liu, Ning; Gan, Lu; Liu, Yu; Gui, Weijun; Li, Wei; Zhang, Xiaohang

    2017-10-01

    Electrical manipulation of charged ions in electrolyte-gated transistors is crucial for enhancing the electric-double-layer (EDL) gating effect, thereby improving their sensing abilities. Here, indium-zinc-oxide (IZO) based thin-film-transistors (TFTs) are fabricated on flexible plastic substrate. Acid doped chitosan-based biopolymer electrolyte is used as the gate dielectric, exhibiting an extremely high EDL capacitance. By regulating the dynamic EDL charging process with special gate potential profiles, the EDL gating effect of the chitosan-gated TFT is enhanced, and then resulting in higher pH sensitivities. An extremely high sensitivity of ∼57.8 mV/pH close to Nernst limit is achieved when the gate bias of the TFT sensor sweeps at a rate of 10 mV/s. Additionally, an enhanced sensitivity of 2630% in terms of current variation with pH range from 11 to 3 is realized when the device is operated in the ion depletion mode with a negative gate bias of -0.7 V. Robust ionic modulation is demonstrated in such chitosan-gated sensors. Efficiently driving the charged ions in the chitosan-gated IZO-TFT provides a new route for ultrasensitive, low voltage, and low-cost biochemical sensing technologies.

  7. SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2009-12-01

    Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

  8. An Integrated Gate Driver in 4H-SiC for Power Converter Applications

    Energy Technology Data Exchange (ETDEWEB)

    Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; Britton, Charles [Oak Ridge National Laboratory (ORNL); Janke, Devon D [ORNL; Ezell, N Dianne Bull [ORNL; Ryu, Sei_Hyung [Cree Semiconductor; Mantooth, Alan [University of Arkansas; Francis, Dr. Matt [University of Arkansas; Lanmichhane, Dr. Ranjan [University of Arkansas; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.; Passmore, Mr. Brandon [APEI, Inc.; Mcnutt, Tyler [APEI, Inc.

    2014-01-01

    A gate driver fabricated in a 2-um 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including rise and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300 C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.

  9. Analysis of integrated thyristor switching-off by a reverse gate pulse current

    Science.gov (United States)

    Grekhov, I. V.; Lyublinsky, A. G.; Mikhailov, E. M.; Poloskin, D. S.; Skidanov, A. A.

    2017-11-01

    To increase the maximum power current density of an integrated n + p'Nn'p +-type thyristor during switching-off by a current pulse in the control circuit, the injection of electrons from the n + emitter should be interrupted before the recovery of the collector p'N junction. This has been done using a rapidly increasing reverse gate current pulse with an amplitude equal to the amplitude of the power switched-off current. After the interruption of the emitter injection, the remaining current through the device is the current of holes extracted from the collector region via the gate electrode. Like in insulated gate bipolar transistors (IGBTs), the physical mechanism that limits the maximum density of the switch-off current is the dynamic avalanche breakdown, which is initiated by the holes extracted through the space charge region of the collector p'N junctions.

  10. Electronic States of High-k Oxides in Gate Stack Structures

    Science.gov (United States)

    Zhu, Chiyu

    In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

  11. Nonassociative learning as gated neural integrator and differentiator in stimulus-response pathways

    Directory of Open Access Journals (Sweden)

    Young Daniel L

    2006-08-01

    Full Text Available Abstract Nonassociative learning is a basic neuroadaptive behavior exhibited across animal phyla and sensory modalities but its role in brain intelligence is unclear. Current literature on habituation and sensitization, the classic "dual process" of nonassociative learning, gives highly incongruous accounts between varying experimental paradigms. Here we propose a general theory of nonassociative learning featuring four base modes: habituation/primary sensitization in primary stimulus-response pathways, and desensitization/secondary sensitization in secondary stimulus-response pathways. Primary and secondary modes of nonassociative learning are distinguished by corresponding activity-dependent recall, or nonassociative gating, of neurotransmission memory. From the perspective of brain computation, nonassociative learning is a form of integral-differential calculus whereas nonassociative gating is a form of Boolean logic operator – both dynamically transforming the stimulus-response relationship. From the perspective of sensory integration, nonassociative gating provides temporal filtering whereas nonassociative learning affords low-pass, high-pass or band-pass/band-stop frequency filtering – effectively creating an intelligent sensory firewall that screens all stimuli for attention and resultant internal model adaptation and reaction. This unified framework ties together many salient characteristics of nonassociative learning and nonassociative gating and suggests a common kernel that correlates with a wide variety of sensorimotor integration behaviors such as central resetting and self-organization of sensory inputs, fail-safe sensorimotor compensation, integral-differential and gated modulation of sensorimotor feedbacks, alarm reaction, novelty detection and selective attention, as well as a variety of mental and neurological disorders such as sensorimotor instability, attention deficit hyperactivity, sensory defensiveness, autism

  12. Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sunwoo; Choi, Changhwan; Lee, Kilbock [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Cho, Joong Hwee [Department of Embedded Systems Engineering,University of Incheon, Incheon 406-722 (Korea, Republic of); Ko, Ki-Young [Korea Institute of Patent Information, Seoul, 146-8 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of)

    2012-10-30

    We report the effect of consecutive electrical stress on the performance of organic field effect transistors (OFETs). Sputtered aluminum oxide (Al{sub 2}O{sub 3}) and hafnium oxide (HfO{sub 2}) were used as gate oxide layers. After the electrical stress, the threshold voltage, which strongly depends on bulk defects, was remarkably shifted to the negative direction, while the other performance characteristics of OFETs such as on-current, transconductance and mobility, which are sensitive to interface defects, were slightly decreased. This result implies that the defects in the bulk layer are significantly affected compared to the defects in the interface layer. Thus, it is important to control the defects in the pentacene bulk layer in order to maintain the good reliabilities of pentacene devices. Those defects in HfO{sub 2} gate oxide devices were larger compared to those in Al{sub 2}O{sub 3} gate oxide devices.

  13. Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

    International Nuclear Information System (INIS)

    Kapetanakis, E.; Skarlatos, D.; Tsamis, C.; Normand, P.; Tsoukalas, D.

    2003-01-01

    Metal-oxide-semiconductor tunnel diodes with gate oxides, in the range of 2.5-3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) x10 15 cm -2 dose, respectively, are investigated. The dependence of N 2 + ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides

  14. Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices.

    Science.gov (United States)

    Feng, Ping; Du, Peifu; Wan, Changjin; Shi, Yi; Wan, Qing

    2016-09-30

    New-concept devices featuring the characteristics of ultralow operation voltages and low fabrication cost have received increasing attention recently because they can supplement traditional Si-based electronics. Also, organic/inorganic composite systems can offer an attractive strategy to combine the merits of organic and inorganic materials into promising electronic devices. In this report, solution-processed graphene oxide/chitosan composite film was found to be an excellent proton conducting electrolyte with a high specific capacitance of ~3.2 μF/cm 2 at 1.0 Hz, and it was used to fabricate multi-gate electric double layer transistors. Dual-gate AND logic operation and two-terminal diode operation were realized in a single device. A two-terminal synaptic device was proposed, and some important synaptic behaviors were emulated, which is interesting for neuromorphic systems.

  15. Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor

    Science.gov (United States)

    Ciccarelli, C.; Park, B. G.; Ogawa, S.; Ferguson, A. J.; Wunderlich, J.

    2010-08-01

    We present a study of the magnetoresistance (MR) of a Si metal-oxide-semiconductor field-effect-transistor (MOSFET) at the break-down regime when a magnetic field is applied perpendicular to the plane of the device. We have identified two different regimes where we observe a large and gate-voltage dependent MR. We suggest two different mechanisms which can explain the observed high MR. Moreover, we have studied how the MR of the MOSFET scales with the dimensions of the channel for gate voltages below the threshold. We observed a decrease in the MR by two orders of magnitude by reducing the dimensions of the channel from 50×280 μm2 to 5×5 μm2.

  16. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-03-09

    It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.

  17. Scrum integration in stage-gate models for collaborative product development

    DEFF Research Database (Denmark)

    Sommer, Anita Friis; Slavensky, Andreas; Nguyen, Vivi Thuy

    2013-01-01

    The relevance of collaborative Product Development (PD) is rising with the decrease of product life cycles combined with growing customer demands. Industrial manufacturers now experience competition in the global market, where differentiation is necessary for survival. Hence, in order...... to differentiate from low-cost competitors and increase PD performance, some industrial manufacturers now seek competitive advantage by experimenting with new ways for collaborative PD. This includes integrating customer-focused agile process models, like Scrum, from the software industry into their existing PD...... models. Thus, instead of replacing traditional stage-gate models agile methods are currently integrated in existing PD models generating hybrid solution for collaborative PD. This paper includes a study of three industrial cases that have successfully integrated Scrum into a stage-gate process model...

  18. Gate array type integrated circuits: technology and reliability

    International Nuclear Information System (INIS)

    Kumurdjian, P.

    1984-03-01

    This paper summarizes a study on a logical C-MOS circuit. After a short presentation, the technical parameters and performance desired are given. On this basis, the dispersion of measurements, according to the series, is examined. The processes of personalization are then analyzed. Finally, some results on the burn-in and aging of circuits are presented. This paper concludes with the methods adopted to obtain a reliable integrated circuit [fr

  19. Improvements in gate-dielectric characteristics of nitrided oxides prepared by rapid thermal processing. Kyusoku kanetsu chikka sankamaku ni yoru gate zetsuenmaku tokusei no kojo

    Energy Technology Data Exchange (ETDEWEB)

    Hori, T. (Matsushita Electric Industral Co. Ltd., Osaka (Japan))

    1991-11-10

    This paper indicates that, in improving gate-dielectric characteristics of MOSFET, a nitriding treatment (light nitridation) using the rapid thermal processing (RTP) is superior to a treatment using resistance heating furnace (heavy nitridation) in terms of the controllability of the teatment processes. Although a nitridation treatment alone will not be able to achive simultaneously the suppression of the interface level generation in the gate insulation films, and the reduction of electron capturing, the paper claims that both requirements can be met if nitrided oxide films generated by the nitridation are re-oxidezed by the RTP. It is suggested that when the re-oxidized nitrided oxide films (provided they are re-oxidized after light nitridation) are used for the gate insulation films in place of the conventional SiO{sub 2} films, the various characteristics representing the performance and reliability of micronized MOS devices (subthreshold characteristics, characteristics of insulation break-down with time, etc.) in general can be equivalent or better. 18 refs., 7 figs., 2 tabs.

  20. Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen

    Science.gov (United States)

    Kato, Kimihiko; Kondo, Hiroki; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2011-06-01

    We have demonstrated the control of interfacial properties of Pr-oxide/Ge gate stack structure by the introduction of nitrogen. From C- V characteristics of Al/Pr-oxide/Ge 3N 4/Ge MOS capacitors, the interface state density decreases without the change of the accumulation capacitance after annealing. The TEM and TED measurements reveal that the crystallization of Pr-oxide is enhanced with annealing and the columnar structure of cubic-Pr 2O 3 is formed after annealing. From the depth profiles measured using XPS with Ar sputtering for the Pr-oxide/Ge 3N 4/Ge stack structure, the increase in the Ge component is not observed in a Pr-oxide film and near the interface between a Pr-oxide film and a Ge substrate. In addition, the N component segregates near the interface region, amorphous Pr-oxynitride (PrON) is formed at the interface. As a result, Pr-oxide/PrON/Ge stacked structure without the Ge-oxynitride interlayer is formed.

  1. High-k perovskite gate oxide BaHfO3

    Science.gov (United States)

    Kim, Young Mo; Park, Chulkwon; Ha, Taewoo; Kim, Useong; Kim, Namwook; Shin, Juyeon; Kim, Youjung; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

    2017-01-01

    We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 as a channel layer on SrTiO3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO3 buffer layer was grown on SrTiO3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm2 V-1 s-1, a Ion/Ioff ratio higher than 107, and a subthreshold swing value of 0.80 V dec-1. We compare the device performances with those of other field effect transistors based on BaSnO3 channels and different gate oxides.

  2. High-k perovskite gate oxide BaHfO3

    Directory of Open Access Journals (Sweden)

    Young Mo Kim

    2017-01-01

    Full Text Available We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 as a channel layer on SrTiO3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO3 buffer layer was grown on SrTiO3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm2 V−1 s−1, a Ion/Ioff ratio higher than 107, and a subthreshold swing value of 0.80 V dec−1. We compare the device performances with those of other field effect transistors based on BaSnO3 channels and different gate oxides.

  3. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  4. NextGen Far-Term Concept Exploration for Integrated Gate-to-Gate Trajectory-Based Operations

    Science.gov (United States)

    Johnson, Sally C.; Barmore, Bryan E.

    2016-01-01

    NASA is currently conducting concept exploration studies toward the definition of a far-term, gate-to-gate concept for Trajectory-Based Operations. This paper presents a basic architectural framework for the far-term concept and discusses some observations about implementation of trajectory-based operations in the National Airspace System. Within the concept, operators and service providers collaboratively negotiate aircraft trajectories, providing agile, optimized, aircraft-specific routing to meet service provider gate-to-gate flow-management constraints and increasing capacity by smoothly and effectively combining flight-deck-based and ground-based metering, merging, and spacing in a mixed-equipage environment. The far-term TBO concept is intended to influence the direction of mid-term TBO research and to inform the definition of stable requirements and standards for TBO communications infrastructure and user equipage.

  5. Self-modulated field electron emitter: Gated device of integrated Si tip-on-nano-channel

    Science.gov (United States)

    Huang, Zhijun; Huang, Yifeng; Pan, Zhangxu; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-12-01

    We report the featured gated field electron emission devices of Si nano-tips with individually integrated Si nano-channels and the interpretation of the related physics. A rational procedure was developed to fabricate the uniform integrated devices. The electrical and thermal conduction tests demonstrated that the Si nano-channel can limit both the current and heat flows. The integrated devices showed the specialties of self-enhancement and self-regulation. The heat resistance results in the heat accumulation at the tip-apex, inducing the thermally enhanced field electron emission. The self-regulated effect of the electrical resistance is benefit for impeding the current overloading and prevents the emitters from a catastrophic breakdown. The nano-channel-integrated Si nano-tip array exhibited emission current density up to 24.9 mA/cm2 at a gate voltage of 94 V, much higher than that of the Si nano-tip array without an integrated nano-channel.

  6. Integrated Science Assessment for Oxides of Nitrogen ...

    Science.gov (United States)

    The Integrated Science Assessment (ISA) for Oxides of Nitrogen – Health Criteria document represents a concise synthesis and evaluation of the most policy-relevant science and will ultimately provide the scientific bases for EPA’s decision regarding whether the current standard for NO2 sufficiently protects public health. Nitrogen Oxide is one of six principal (or

  7. Monolithically integrated Si gate-controlled light-emitting device: science and properties

    Science.gov (United States)

    Xu, Kaikai

    2018-02-01

    The motivation of this study is to develop a p–n junction based light emitting device, in which the light emission is conventionally realized using reverse current driving, by voltage driving. By introducing an additional terminal of insulated gate for voltage driving, a novel three-terminal Si light emitting device is described where both the light intensity and spatial light pattern of the device are controlled by the gate voltage. The proposed light emitting device employs injection-enhanced Si in avalanche mode where electric field confinement occurs in the corner of a reverse-biased p+n junction. It is found that, depending on the bias conditions, the light intensity is either a linear or a quadratic function of the applied gate voltage or the reverse-bias. Since the light emission is based on the avalanching mode, the Si light emitting device offers the potential for very large scale integration-compatible light emitters for inter- or intra-chip signal transmission and contactless functional testing of wafers.

  8. The influence of fibril composition and dimension on the performance of paper gated oxide transistors

    Science.gov (United States)

    Pereira, L.; Gaspar, D.; Guerin, D.; Delattre, A.; Fortunato, E.; Martins, R.

    2014-03-01

    Paper electronics is a topic of great interest due the possibility of having low-cost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiber/nanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiber/nanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm2 V-1 s-1, with an ION/IOFF ratio close to 105.

  9. Plasma process-induced latent damage on gate oxide - demonstrated by single-layer and multi-layer antenna structures

    NARCIS (Netherlands)

    Wang, Zhichun; Ackaert, Jan; Salm, Cora; Kuper, F.G.

    2001-01-01

    In this paper, by using both single-layer (SL) and multi-layer (ML) or stacked antenna structures, a simple experimental method is proposed to directly demonstrate the pure plasma process-induced latent damage on gate oxide without any impact of additional defects generated by normal constant

  10. Single crystal ternary oxide ferroelectric integration with Silicon

    Science.gov (United States)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  11. The influence of the gate oxide growing way to the radiation effects of the CMOS op-amp

    International Nuclear Information System (INIS)

    Lu Wu; Guo Qi; Ren Diyuan; Yu Xuefeng; Zhang Guoqiang; Yan Rongliang

    2000-01-01

    The total dose effects of the CMOS op-amps whose transistor gates were produced separately with the dry O 2 and H 2 + O 2 process have been investigated. By comparing the radiation effects between the two circuits and their inner transistors, the authors have explored the causes made the difference of the two amplifiers' sensitivity to the irradiation. It is shown that the way of the gate oxide growing is one of key factors of influencing the performance of the op-amplifiers in total dose radiation environment

  12. Negative charge induced degradation of PMOSFETs with BF2-implanted p+-poly gate

    International Nuclear Information System (INIS)

    Lu, C.Y.; Sung, J.M.

    1989-01-01

    A new degradation phenomenon on thin gate oxide PMOS-FETs with BF 2 implanted p + -poly gate has been demonstrated and investigated. The cause of this type of degradation is a combination of the boron penetration through the gate oxide and charge trap generation due to the presence of fluorine in the gate oxide and some other processing-induced effects. The negative charge-induced degradation other than enhanced boron diffusion has been studied in detail here. The impact of this process-sensitive p + -poly gate structure on deep submicron CMOS process integration has been discussed. (author)

  13. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.

    Science.gov (United States)

    Zhuang, Jiaqing; Sun, Qi-Jun; Zhou, Ye; Han, Su-Ting; Zhou, Li; Yan, Yan; Peng, Haiyan; Venkatesh, Shishir; Wu, Wei; Li, Robert K Y; Roy, V A L

    2016-11-16

    Previous investigations on rare-earth oxides (REOs) reveal their high possibility as dielectric films in electronic devices, while complicated physical methods impede their developments and applications. Herein, we report a facile route to fabricate 16 REOs thin insulating films through a general solution process and their applications in low-voltage thin-film transistors as dielectrics. The formation and properties of REOs thin films are analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry, water contact angle measurement, X-ray photoemission spectroscopy (XPS), and electrical characterizations, respectively. Ultrasmooth, amorphous, and hydrophilic REO films with thickness around 10 nm have been obtained through a combined spin-coating and postannealing method. The compositional analysis results reveal the formation of RE hydrocarbonates on the surface and silicates at the interface of REOs films annealed on Si substrate. The dielectric properties of REO films are investigated by characterizing capacitors with a Si/Ln 2 O 3 /Au (Ln = La, Gd, and Er) structure. The observed low leakage current densities and large areal capacitances indicate these REO films can be employed as alternative gate dielectrics in transistors. Thus, we have successfully fabricated a series of low-voltage organic thin-film transistors based on such sol-gel derived REO films to demonstrate their application in electronics. The optimization of REOs dielectrics in transistors through further surface modification has also been studied. The current study provides a simple solution process approach to fabricate varieties of REOs insulating films, and the results reveal their promising applications as alternative gate dielectrics in thin-film transistors.

  14. Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

    Science.gov (United States)

    Qin, Ting; Liao, Congwei; Huang, Shengxiang; Yu, Tianbao; Deng, Lianwen

    2018-01-01

    An analytical drain current model based on the surface potential is proposed for amorphous indium gallium zinc oxide (a-InGaZnO) thin-film transistors (TFTs) with a synchronized symmetric dual-gate (DG) structure. Solving the electric field, surface potential (φS), and central potential (φ0) of the InGaZnO film using the Poisson equation with the Gaussian method and Lambert function is demonstrated in detail. The compact analytical model of current–voltage behavior, which consists of drift and diffusion components, is investigated by regional integration, and voltage-dependent effective mobility is taken into account. Comparison results demonstrate that the calculation results obtained using the derived models match well with the simulation results obtained using a technology computer-aided design (TCAD) tool. Furthermore, the proposed model is incorporated into SPICE simulations using Verilog-A to verify the feasibility of using DG InGaZnO TFTs for high-performance circuit designs.

  15. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Directory of Open Access Journals (Sweden)

    Minkyu Chun

    2015-05-01

    Full Text Available We investigated the effects of top gate voltage (VTG and temperature (in the range of 25 to 70 oC on dual-gate (DG back-channel-etched (BCE amorphous-indium-gallium-zinc-oxide (a-IGZO thin film transistors (TFTs characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  16. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Jae Sang Heo

    2017-06-01

    Full Text Available In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD. The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx and poly(4-vinylphenol (PVP, exhibited high dielectric constant (ε~8.15 and high-frequency-stable characteristics (1 MHz. Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs. Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric.

  17. Role of Oxygen in Ionic Liquid Gating on Two-Dimensional Cr2Ge2Te6: A Non-oxide Material.

    Science.gov (United States)

    Chen, Yangyang; Xing, Wenyu; Wang, Xirui; Shen, Bowen; Yuan, Wei; Su, Tang; Ma, Yang; Yao, Yunyan; Zhong, Jiangnan; Yun, Yu; Xie, X C; Jia, Shuang; Han, Wei

    2018-01-10

    Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr 2 Ge 2 Te 6 . Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect on  the channel resistance of Cr 2 Ge 2 Te 6 devices (liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO 2 .

  18. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    Science.gov (United States)

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  19. AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster

    Science.gov (United States)

    Han, Sang-Woo; Jo, Min-Gi; Kim, Hyungtak; Cho, Chun-Hyung; Cha, Ho-Young

    2017-08-01

    This study investigates the effects of a monolithic gate current booster integrated with an AlGaN/GaN-on-Si power-switching device. The integrated gate current booster was implemented by a single-stage inverter topology consisting of a recessed normally-off AlGaN/GaN MOS-HFET and a mesa resistor. The monolithically integrated gate current booster in a switching FET eliminated the parasitic elements caused by external interconnection and enabled fast switching operation. The gate charging and discharging currents were boosted by the integrated inverter, which significantly reduced both rise and fall times: the rise time was reduced from 626 to 41.26 ns, while the fall time was reduced from 554 to 42.19 ns by the single-stage inverter. When the packaged monolithic power chip was tested under 1 MHz hard-switching operation with VDD = 200 V, the switching loss was found to have been drastically reduced, from 5.27 to 0.55 W.

  20. Low-temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass

    International Nuclear Information System (INIS)

    Usuda, R.; Uchida, K.; Nozaki, S.

    2015-01-01

    Although a UV cure was found to effectively convert a perhydropolysilazane (PHPS) spin-on-glass film into a dense SiO x film at low temperature, the electrical characteristics were never reported in order to recommend the use of PHPS as a gate-oxide material that can be formed at low temperature. We have formed a high-quality gate oxide by UV irradiation on the PHPS film, and obtained an interface midgap trap density of 3.4 × 10 11  cm −2 eV −1 by the UV wet oxidation and UV post-metallization annealing (PMA), at a temperature as low as 160 °C. In contrast to the UV irradiation using short-wavelength UV light, which is well known to enhance oxidation by the production of the excited states of oxygen, the UV irradiation was carried out using longer-wavelength UV light from a metal halide lamp. The UV irradiation during the wet oxidation of the PHPS film generates electron-hole pairs. The electrons ionize the H 2 O molecules and facilitate dissociation of the molecules into H and OH − . The OH − ions are highly reactive with Si and improve the stoichiometry of the oxide. The UV irradiation during the PMA excites the electrons from the accumulation layer, and the built-in electric field makes the electron injection into the oxide much easier. The electrons injected into the oxide recombine with the trapped holes, which have caused a large negative flat band voltage shift after the UV wet oxidation, and also ionize the H 2 O molecules. The ionization results in the electron stimulated dissociation of H 2 O molecules and the decreased interface trap density

  1. Electrical characterization of thulium silicate interfacial layers for integration in high-k/metal gate CMOS technology

    Science.gov (United States)

    Dentoni Litta, Eugenio; Hellström, Per-Erik; Henkel, Christoph; Östling, Mikael

    2014-08-01

    This work presents a characterization of the electrical properties of thulium silicate thin films, within the scope of a possible application as IL (interfacial layer) in scaled high-k/metal gate CMOS technology. Silicate formation is investigated over a wide temperature range (500-900 °C) through integration in MOS capacitor structures and analysis of the resulting electrical properties. The results are compared to those obtained from equivalent devices integrating lanthanum silicate interfacial layers. The thulium silicate IL is formed through a gate-last CMOS-compatible process flow, providing IL EOT of 0.1-0.3 nm at low formation temperature and interface state density at flatband condition below 2 × 1011 cm-2 eV-1. The effects of a possible integration in a gate-first process flow with a maximum thermal budget of 1000 °C are also evaluated, achieving an IL EOT of 0.2-0.5 nm, an interface state density at flatband condition ˜1 × 1011 cm-2 eV-1 and a reduction in gate leakage current density of one order of magnitude compared to the same stack without IL.

  2. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  3. Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors

    Science.gov (United States)

    Kawanago, Takamasa; Ikoma, Ryo; Oba, Tomoaki; Takagi, Hiroyuki

    2017-11-01

    In this study, radical oxidation is applied to the fabrication of a hybrid self-assembled monolayer (SAM)/hafnium oxide (HfOx) gate dielectric in molybdenum disulfide (MoS2) field-effect transistors. The fabrication process involves radical oxidation to form HfOx at the surface of metallic HfN, SAM formation by immersion, and the deterministic transfer of MoS2 flakes. A subthreshold slope of 75 mV/dec and small hysteresis were demonstrated, indicating superior interfacial properties. Cross-sectional transmission electron microscopy revealed the uniform formation of the HfOx layer at the surface of HfN. The SAM is indispensable for the superior interfacial properties in MoS2 field-effect transistors. The radical oxidation is not restricted to the oxidation of silicon and germanium substrates and was also found to be applicable to the fabrication of a high-k gate dielectric. This study opens up interesting possibilities of radical oxidation for research on functional electronic devices.

  4. Understanding the Structure of High-K Gate Oxides - Oral Presentation

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Andre [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-25

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  5. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  6. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors.

    Science.gov (United States)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-11-07

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.

  7. Electro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode.

    Science.gov (United States)

    Ramesh, Palanisamy; Itkis, Mikhail E; Bekyarova, Elena; Wang, Feihu; Niyogi, Sandip; Chi, Xiaoliu; Berger, Claire; de Heer, Walt; Haddon, Robert C

    2010-10-20

    We report the effect of electrochemical oxidation in nitric acid on the electronic properties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the availability of an additional reaction channel in EG, which is not present in graphite but which facilitates the introduction of the reaction medium into the graphene galleries during electro-oxidation. The device performance of the chemically processed graphene was studied by patterning the EG wafers with two geometrically identical macroscopic channels; the electro-oxidized channel showed a logarithmic increase of resistance with decreasing temperature, which is ascribed to the scattering of charge carriers in a two-dimensional electronic gas, rather than the presence of an energy gap at the Fermi level. Field-effect transistors were fabricated on the electro-oxidized and pristine graphene channels using single-walled carbon nanotube thin film top gate electrodes, thereby allowing the study of the effect of oxidative chemistry on the transistor performance of EG. The electro-oxidized channel showed higher values for the on-off ratio and the mobility of the graphene field-effect transistor, which we ascribe to the availability of high-quality internal graphene layers after electro-oxidation of the more defective top layers. Thus, the present oxidative process provides a clear contrast with previously demonstrated covalent chemistry in which sp(3) hybridized carbon atoms are introduced into the graphitic transport layer of the lattice by carbon-carbon bond formation, thereby opening an energy gap.

  8. Transparent Oxide Thin-Film Transistors: Production, Characterization and Integration

    Science.gov (United States)

    Barquinha, Pedro Miguel Candido

    This dissertation is devoted to the study of the emerging area of transparent electronics, summarizing research work regarding the development of n-type thin-film transistors (TFTs) based on sputtered oxide semiconductors. All the materials are produced without intentional substrate heating, with annealing temperatures of only 150-200 °C being used to optimize transistor performance. The work is based on the study and optimization of active semiconductors from the gallium-indium-zinc oxide system, including both the binary compounds Ga2O3, In2O3 and ZnO, as well as ternary and quaternary oxides based on mixtures of those, such as IZO and GIZO with different atomic ratios. Several topics are explored, including the study and optimization of the oxide semiconductor thin films, their application as channel layers on TFTs and finally the implementation of the optimized processes to fabricate active matrix backplanes to be integrated in liquid crystal display (LCD) prototypes. Sputtered amorphous dielectrics with high dielectric constant (high-kappa) based on mixtures of tantalum-silicon or tantalum-aluminum oxides are also studied and used as the dielectric layers on fully transparent TFTs. These devices also include transparent and highly conducting IZO thin films as source, drain and gate electrodes. Given the flexibility of the sputtering technique, oxide semiconductors are analyzed regarding several deposition parameters, such as oxygen partial pressure and deposition pressure, as well as target composition. One of the most interesting features of multicomponent oxides such as IZO and GIZO is that, due to their unique electronic configuration and carrier transport mechanism, they allow to obtain amorphous structures with remarkable electrical properties, such as high hall-effect mobility that exceeds 60 cm2 V -1 s-1 for IZO. These properties can be easily tuned by changing the processing conditions and the atomic ratios of the multicomponent oxides, allowing to

  9. New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

    Science.gov (United States)

    Te-Kuang Chiang,

    2010-07-01

    Using the exact solution of the two-dimensional Poisson equation, a new analytical model comprising two-dimensional potential and threshold voltage for short-channel fully depleted dual-material-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed. The model shows that the minimum acceptable channel length can be sustained while repressing the short-channel effects if a thin gate oxide and a thin silicon body are employed in the device. Moreover, by increasing the ratio of the screen gate length to control gate length, the threshold voltage roll-off can be more effectively reduced. The model is verified by the close agreement of its results with those of a numerical simulation using the device simulator MEDICI. The model not only offers an insight into the device physics but is also an efficient model for circuit simulation.

  10. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    KAUST Repository

    Hanna, Amir

    2013-11-26

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

  11. Hybrid top-gate transistors based on ink-jet printed zinc tin oxide and different organic dielectrics

    Science.gov (United States)

    Sykora, Benedikt; von Seggern, Heinz

    2018-01-01

    We report about hybrid top-gate transistors based on ink-jet printed zinc tin oxide (ZTO) and different spin-coated organic dielectrics. Transistors using the polar dielectric poly(methyl methacrylate) (PMMA) and the nonpolar polystyrene (PS) were evaluated. By applying PMMA, we were able to process field-effect transistors with a saturation mobility of up to 4.3 cm2 V-1 s-1. This is the highest reported mobility of an ink-jet printed ZTO top-gate transistor using a spin-coated PMMA dielectric. This transistor also exhibits a small threshold voltage of 1.7 V and an on/off-current ratio exceeding 105. The usage of PS as another organic dielectric leads to functional devices with inferior performance, meaning a saturation mobility of 0.2 cm2 V-1 s-1 and a threshold voltage of 9.7 V. The more polar character of the PMMA compared to the PS dielectric leading to a better adhesion on the quite hydrophilic ZTO surface could explain the improved device performance of the ZTO top-gate transistor using PMMA.

  12. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

    Science.gov (United States)

    Lee, W; Su, P

    2009-02-11

    This paper systematically presents controlled single-electron effects in multiple-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with various gate lengths, fin widths, gate bias and temperature. Our study indicates that using the non-overlapped gate to source/drain structure as an approach to the single-electron transistor (SET) in MOSFETs is promising. Combining the advantage of gate control and the constriction of high source/drain resistances, single-electron effects are further enhanced using the multiple-gate architecture. From the presented results, downsizing multiple-gate SOI MOSFETs is needed for future room-temperature SET applications. Besides, the tunnel barriers and access resistances may need to be further optimized. Since the Coulomb blockade oscillation can be achieved in state-of-the-art complementary metal-oxide-semiconductor (CMOS) devices, it is beneficial to build SETs in low-power CMOS circuits for ultra-high-density purposes.

  13. New respiratory gating technique for whole heart cine imaging: integration of a navigator slice in steady state free precession sequences.

    Science.gov (United States)

    Uribe, Sergio; Tejos, Cristian; Razavi, Reza; Schaeffter, Tobias

    2011-07-01

    To evaluate the performance of a slice navigator sequence integrated into a b-SSFP sequence for obtaining real time respiratory self-gated whole heart cine imaging. In this work, we present a novel and robust approach for respiratory motion detection by integrating a slice navigator sequence into a balanced steady state free precession (b-SSFP) sequence, while maintaining the steady state. The slice navigator sequence is integrated into consecutive repetition times (TRs) of a b-SSFP sequence to excite and read out a navigator slice. We performed several phantom experiments to test the performance of the slice navigator sequence. Additionally, the method was evaluated in five volunteers and compared with breathing signals obtained from conventional pencil beam navigator sequence. Finally, the navigator slice was used to obtain whole heart MR cine images. The breathing signals detected by the proposed method showed an excellent agreement with those obtained from pencil beam navigators. Moreover, the technique was capable of removing respiratory motion artifacts with minimal distortion of the steady state. Image quality comparison showed a statistical significant improvement from a quality score of 2.1 obtained by the nonrespiratory gated images, compared to a quality score of 3.4 obtained by the respiratory gated images. This novel method represents a robust approach to estimate breathing motion during SSFP imaging. The technique was successfully applied to acquire whole heart artifact-free cine images. Copyright © 2011 Wiley-Liss, Inc.

  14. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  15. Low-voltage organic field-effect transistors (OFETs) with solution-processed metal-oxide as gate dielectric.

    Science.gov (United States)

    Su, Yaorong; Wang, Chengliang; Xie, Weiguang; Xie, Fangyan; Chen, Jian; Zhao, Ni; Xu, Jianbin

    2011-12-01

    In this study, low-voltage copper phthalocyanine (CuPc)-based organic field-effect transistors (OFETs) are demonstrated utilizing solution-processed bilayer high-k metal-oxide (Al(2)O(y)/TiO(x)) as gate dielectric. The high-k metal-oxide bilayer is fabricated at low temperatures (OFETs show high electric performance with high hole mobility of 0.06 cm(2)/(V s), threshold voltage of -0.5 V, on/off ration of 2 × 10(3) and a very small subthreshold slope of 160 mV/dec when operated at -1.5 V. Our study demonstrates a simple and robust approach that could be used to achieve low-voltage operation with solution-processed technique. © 2011 American Chemical Society

  16. A study of the physical mechanisms responsible for heavy ion-induced latent defects in gate oxides

    International Nuclear Information System (INIS)

    Portier, M.

    2010-01-01

    Heavy ions naturally present in the radiation environment of space is a constraint to take into account for embedded electronics. It was observed that heavy ions induce nano-scale structural modifications in the oxide of the SiO 2 -Si structures. SiO 2 -Si structures were representative of the MOS devices embedded. These structural modifications induced by heavy ions can play the role of latent defects in embedded MOSFETs observed by the premature breakdown in the gate oxide of MOS power transistors during function, thus reducing their lifetime. From a statistical study of our topographic structures irradiated, we seek to highlight the parameters to take into account to better understand the physical mechanisms behind the formation of the latent defects. We would to give a full account of reality relating to the probability of formation in order to establish a full evaluation of the risks linked to these defects. It is with a better knowledge of training criteria. (author)

  17. Integrating respiratory-gated PET-based target volume delineation in liver SBRT planning, a pilot study

    International Nuclear Information System (INIS)

    Riou, Olivier; Thariat, Juliette; Serrano, Benjamin; Azria, David; Paulmier, Benoit; Villeneuve, Remy; Fenoglietto, Pascal; Artenie, Antonella; Ortholan, Cécile; Faraggi, Marc

    2014-01-01

    To assess the feasibility and benefit of integrating four-dimensional (4D) Positron Emission Tomography (PET) – computed tomography (CT) for liver stereotactic body radiation therapy (SBRT) planning. 8 patients with 14 metastases were accrued in the study. They all underwent a non-gated PET and a 4D PET centered on the liver. The same CT scan was used for attenuation correction, registration, and considered the planning CT for SBRT planning. Six PET phases were reconstructed for each 4D PET. By applying an individualized threshold to the 4D PET, a Biological Internal Target Volume (BITV) was generated for each lesion. A gated Planning Target Volume (PTVg) was created by adding 3 mm to account for set-up margins. This volume was compared to a manual Planning Target Volume (PTV) delineated with the help of a semi-automatic Biological Target Volume (BTV) obtained from the non-gated exam. A 5 mm radial and a 10 mm craniocaudal margins were applied to account for tumor motion and set-up margins to create the PTV. One undiagnosed liver metastasis was discovered thanks to the 4D PET. The semi-automatic BTV were significantly smaller than the BITV (p = 0.0031). However, after applying adapted margins, 4D PET allowed a statistically significant decrease in the PTVg as compared to the PTV (p = 0.0052). In comparison to non-gated PET, 4D PET may better define the respiratory movements of liver targets and improve SBRT planning for liver metastases. Furthermore, non respiratory-gated PET exams can both misdiagnose liver metastases and underestimate the real internal target volumes

  18. Integrated funnel-and-gate/GZB product recovery technologies for in situ management of creosote NAPL-impacted aquifers

    International Nuclear Information System (INIS)

    Mueller, J.G.; Borchert, S.M.; Klingel, E.J.

    1997-01-01

    An in situ source management system was modeled and designed for the containment and recovery of creosote non-aqueous phase liquid (NAPL) at a former wood treating facility in Nashua, New Hampshire. The conceptual system was based on the integration of patented technologies for physical source containment and management (ie., funnel-and-gate technology) with patented in situ product recovery (i.e, GZB technology - described below). A funnel-and-gate physical barrier was proposed to mitigate the continued flow of NAPL into the Merrimack River. The purpose of the funnel was to divert groundwater (and potential NAPL) flow through two gate areas. Where required, an in situ system for product recovery was integrated. Mathematical modeling of the combined technologies led to the selection of a metal sheet pile barrier wall along 650 feet of the river's shoreline with the wall anchored into an underlying zone of lesser permeability. Multiple GZB wells were placed strategically within the system. This combination of technologies promised to offer a more effective, cost-efficient approach for long-term management of environmental concerns at Nashua, and related sites

  19. Solution-gated graphene field effect transistors integrated in microfluidic systems and used for flow velocity detection.

    Science.gov (United States)

    He, Rong Xiang; Lin, Peng; Liu, Zhi Ke; Zhu, Hong Wei; Zhao, Xing Zhong; Chan, Helen L W; Yan, Feng

    2012-03-14

    Solution-gated graphene field effect transistors (SGGT) were integrated in microfluidic systems. The transfer characteristics of a SGGT with an Ag/AgCl gate electrode shifted horizontally with the change of the ionic concentration of KCl solution in the microchannel and the relationship can be fitted with the Nernst equation, which was attributed to the change of the potential drop at the Ag/AgCl electrode. Therefore the gate electrode is one important factor for the ion sensitive property of the SGGT. Then SGGTs were used as flow velocity sensors, which were based on measuring the streaming potentials in microfluidic channels. A linear relationship between the shift of the transfer curve of the SGGT and the flow velocity was obtained, indicating that the SGGT is a promising transducer for measuring flow velocity in a microchip. Since the streaming potential is influenced by the three physical quantities, including the flow velocity, the ionic strength of the fluid and the zeta potential of the substrate, the device can be used for sensing any one of the three quantities when the other two were known. It is noteworthy that SGGTs have been used for various types of chemical and biological sensors. Array of the devices integrated in multichannel microchips are expected to find many important applications in the lab-on-a-chip systems in the future. © 2012 American Chemical Society

  20. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

    Directory of Open Access Journals (Sweden)

    Yu-Hua Liu

    2017-11-01

    Full Text Available Gold-nanoparticle (Au-NP non-volatile memories (NVMs with low-damage CF4 plasma treatment on the blocking oxide (BO layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si–F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS, while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS. In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS to support the bandgap engineering. The reactive power of the CF4 plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs and the tunneling oxide (TO layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 104 s and a nearly negligible increase in charge loss at 85 °C of the CF4-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

  1. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer.

    Science.gov (United States)

    Liu, Yu-Hua; Kao, Chyuan-Haur; Cheng, Tsung-Chin; Wu, Chih-I; Wang, Jer-Chyi

    2017-11-10

    Gold-nanoparticle (Au-NP) non-volatile memories (NVMs) with low-damage CF₄ plasma treatment on the blocking oxide (BO) layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si-F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS), while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS). In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS) to support the bandgap engineering. The reactive power of the CF₄ plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs) and the tunneling oxide (TO) layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 10⁴ s and a nearly negligible increase in charge loss at 85 °C of the CF₄-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

  2. Strain-gated piezotronic transistors based on vertical zinc oxide nanowires.

    Science.gov (United States)

    Han, Weihua; Zhou, Yusheng; Zhang, Yan; Chen, Cheng-Ying; Lin, Long; Wang, Xue; Wang, Sihong; Wang, Zhong Lin

    2012-05-22

    Strain-gated piezotronic transistors have been fabricated using vertically aligned ZnO nanowires (NWs), which were grown on GaN/sapphire substrates using a vapor-liquid-solid process. The gate electrode of the transistor is replaced by the internal crystal potential generated by strain, and the control over the transported current is at the interface between the nanowire and the top or bottom electrode. The current-voltage characteristics of the devices were studied using conductive atomic force microscopy, and the results show that the current flowing through the ZnO NWs can be tuned/gated by the mechanical force applied to the NWs. This phenomenon was attributed to the piezoelectric tuning of the Schottky barrier at the Au-ZnO junction, known as the piezotronic effect. Our study demonstrates the possibility of using Au droplet capped ZnO NWs as a transistor array for mapping local strain. More importantly, our design gives the possibility of fabricating an array of transistors using individual vertical nanowires that can be controlled independently by applying mechanical force/pressure over the top. Such a structure is likely to have important applications in high-resolution mapping of strain/force/pressure.

  3. On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger-Poisson solver

    Science.gov (United States)

    Cassan, Eric

    2000-06-01

    A full self-consistent one-dimensional Schrödinger-Poisson model is reported in this article, which is specifically dedicated to the study of direct tunneling current through ultrathin gate oxide of metal-oxide-semiconductor (MOS) structures. The gate current is obtained by estimating the quasibound state lifetimes within the formalism of the formal reflection delay time of wave packets using the transfer-matrix method. As an alternative design to conventional MOS structures, two strategies are investigated in this work to scale oxide thickness in the sub 1.5 nm range while keeping an acceptable gate current leakage of some A/cm2. These include nitride/oxide stacked gate dielectrics used to increase the insulator thickness, and heterostructure MOS capacitors to confine electrons in a buried quantum well. Tensile strained Si1-yCy/Si and Si/Si1-xGex heterostructures that provide a convenient conduction band offset are proposed in this order. A conduction band offset of 0.19 eV is shown to yield nearly the same but limited improvement than the stacked gate dielectrics structure. Compared with the conventional MOS device of equivalent oxide thickness, a gate current reduction by more than two orders of magnitude is reached by using a heterostructure with a conduction band offset of 0.31 eV. For MOS transistor application this significant gain may be in addition to the driving current increase that can be expected from the strain-induced improvement of electron transport properties.

  4. High performance trench MOS barrier Schottky diode with high-k gate oxide

    Science.gov (United States)

    Zhai, Dong-Yuan; Zhu, Jun; Zhao, Yi; Cai, Yin-Fei; Shi, Yi; Zheng, You-Liao

    2015-07-01

    A novel trench MOS barrier Schottky diode (TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS. Project supported by the National Basic Research Program of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR14F040001).

  5. Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method

    Science.gov (United States)

    Chidambaram, Thenappan

    III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.

  6. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO2 nanogranular films

    International Nuclear Information System (INIS)

    Zhu, Li Qiang; Chao, Jin Yu; Xiao, Hui

    2014-01-01

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO 2 nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics

  7. Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Esro, M.; Adamopoulos, G., E-mail: g.adamopoulos@lancaster.ac.uk [Engineering Department, Lancaster University, Lancaster LA1 4YR (United Kingdom); Mazzocco, R.; Kolosov, O.; Krier, A. [Physics Department, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Vourlias, G. [Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Milne, W. I. [Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Department of Electrical and Computing Engineering, University of Canterbury, 4800 Christchurch (New Zealand)

    2015-05-18

    We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (La{sub x}Al{sub 1−x}O{sub y}) grown by spray pyrolysis in ambient atmosphere at 440 °C. The structural, electronic, optical, morphological, and electrical properties of the La{sub x}Al{sub 1−x}O{sub y} films and devices as a function of the lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As-deposited LaAlO{sub y} dielectrics exhibit a wide band gap (∼6.18 eV), high dielectric constant (k ∼ 16), low roughness (∼1.9 nm), and very low leakage currents (<3 nA/cm{sup 2}). TFTs employing solution processed LaAlO{sub y} gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (∼10 V), high on/off current modulation ratio of >10{sup 6}, subthreshold swing of ∼650 mV dec{sup −1}, and electron mobility of ∼12 cm{sup 2} V{sup −1} s{sup −1}.

  8. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NARCIS (Netherlands)

    Niang, K.M.; Barquinha, P.M.C.; Martins, R.F.P.; Cobb, B.; Powell, M.J.; Flewitt, A.J.

    2016-01-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and

  9. Integration of functional complex oxide nanomaterials on silicon

    Directory of Open Access Journals (Sweden)

    Jose Manuel eVila-Fungueiriño

    2015-06-01

    Full Text Available The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE. Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  10. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    Science.gov (United States)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  11. All-Optical Network Subsystems Using Integrated SOA-Based Optical Gates and Flip-Flops for Label-Swapped Netorks

    DEFF Research Database (Denmark)

    Seoane, Jorge; Holm-Nielsen, Pablo Villanueva; Kehayas, E.

    2006-01-01

    In this letter, we demonstrate that all-optical network subsystems, offering intelligence in the optical layer, can be constructed by functional integration of integrated all-optical logic gates and flip-flops. In this context, we show 10-Gb/s all-optical 2-bit label address recognition by interc...

  12. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

    International Nuclear Information System (INIS)

    Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.

    1998-01-01

    Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices

  13. Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics

    Science.gov (United States)

    Cadilha Marques, Gabriel; Garlapati, Suresh Kumar; Dehm, Simone; Dasgupta, Subho; Hahn, Horst; Tahoori, Mehdi; Aghassi-Hagmann, Jasmin

    2017-09-01

    Printed electronic components offer certain technological advantages over their silicon based counterparts, like mechanical flexibility, low process temperatures, maskless and additive manufacturing possibilities. However, to be compatible to the fields of smart sensors, Internet of Things, and wearables, it is essential that devices operate at small supply voltages. In printed electronics, mostly silicon dioxide or organic dielectrics with low dielectric constants have been used as gate isolators, which in turn have resulted in high power transistors operable only at tens of volts. Here, we present inkjet printed circuits which are able to operate at supply voltages as low as ≤2 V. Our transistor technology is based on lithographically patterned drive electrodes, the dimensions of which are carefully kept well within the printing resolutions; the oxide semiconductor, the electrolytic insulator and the top-gate electrodes have been inkjet printed. Our inverters show a gain of ˜4 and 2.3 ms propagation delay time at 1 V supply voltage. Subsequently built 3-stage ring oscillators start to oscillate at a supply voltage of only 0.6 V with a frequency of ˜255 Hz and can reach frequencies up to ˜350 Hz at 2 V supply voltage. Furthermore, we have introduced a systematic methodology for characterizing ring oscillators in the printed electronics domain, which has been largely missing. Benefiting from this procedure, we are now able to predict the switching capacitance and driver capability at each stage, as well as the power consumption of our inkjet printed ring oscillators. These achievements will be essential for analyzing the performance and power characteristics of future inkjet printed digital circuits.

  14. High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide.

    Science.gov (United States)

    Guerriero, Erica; Pedrinazzi, Paolo; Mansouri, Aida; Habibpour, Omid; Winters, Michael; Rorsman, Niklas; Behnam, Ashkan; Carrion, Enrique A; Pesquera, Amaia; Centeno, Alba; Zurutuza, Amaia; Pop, Eric; Zirath, Herbert; Sordan, Roman

    2017-05-25

    The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f max , cutoff frequency f T , ratio f max /f T , forward transmission coefficient S 21 , and open-circuit voltage gain A v . All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f max /f T  > 3, A v  > 30 dB, and S 21  = 12.5 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance ~600 S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain.

  15. Oxidation of Phe454 in the Gating Segment Inactivates Trametes multicolor Pyranose Oxidase during Substrate Turnover

    Czech Academy of Sciences Publication Activity Database

    Halada, Petr; Brugger, D.; Volc, Jindřich; Peterbauer, C.K.; Leitner, C.; Haltrich, D.

    2016-01-01

    Roč. 11, č. 2 (2016), e0148108 E-ISSN 1932-6203 R&D Projects: GA MŠk(CZ) LO1509; GA MŠk MEB060910 Institutional support: RVO:61388971 Keywords : AMINO-ACID-RESIDUES * PROTEIN PHARMACEUTICALS * ENZYMATIC OXIDATION Subject RIV: EE - Microbiology, Virology Impact factor: 2.806, year: 2016

  16. Cleaning Challenges of High-κ/Metal Gate Structures

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-12-20

    High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.

  17. Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2017-04-01

    The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

  18. Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2gate stacks.

    Science.gov (United States)

    Henkel, Christoph; Hellström, Per-Erik; Ostling, Mikael; Stöger-Pollach, Michael; Bethge, Ole; Bertagnolli, Emmerich

    2012-08-01

    The paper addresses the passivation of Germanium surfaces by using layered La 2 O 3 /ZrO 2 high- k dielectrics deposited by Atomic Layer Deposition to be applied in Ge-based MOSFET devices. Improved electrical properties of these multilayered gate stacks exposed to oxidizing and reducing ambient during thermal post treatment in presence of thin Pt cap layers are demonstrated. The results suggest the formation of thin intermixed La x Ge y O z interfacial layers with thicknesses controllable by oxidation time. This formation is further investigated by XPS, EDX/EELS and TEM analysis. An additional reduction annealing treatment further improves the electrical properties of the gate dielectrics in contact with the Ge substrate. As a result low interface trap densities on (1 0 0) Ge down to 3 × 10 11  eV -1  cm -2 are demonstrated. The formation of the high- k La x Ge y O z layer is in agreement with the oxide densification theory and may explain the improved interface trap densities. The scaling potential of the respective layered gate dielectrics used in Ge-based MOS-based device structures to EOT of 1.2 nm or below is discussed. A trade-off between improved interface trap density and a lowered equivalent oxide thickness is found.

  19. Nitrogen Oxides (NOx) Primary NAAQS REVIEW: Integrated ...

    Science.gov (United States)

    The NOx Integrated Review Plan is the first document generated as part of the National Ambient Air Quality Standards (NAAQS) review process. The Plan presents background information, the schedule for the review, the process to be used in conducting the review, and the key policy-relevant science issues that will guide the review. The integrated review plan also discusses the frameworks for the various assessment documents to be prepared by the EPA as part of the review, including an Integrated Science Assessment (ISA), and as warranted, a Risk/Exposure Assessment (REA), and a Policy Assessment (PA). The primary purpose of the NOx Integrated Review Plan is to highlight the key policy-relevant issues to be considered in the Review of the NO2 primary NAAQS. A draft of the integrated review plan will be the subject of an advisory review with the Clean Air Scientific Advisory Committee (CASAC) and made available to the public for review and comment.

  20. Fabrication of a solution-gated transistor based on valinomycin modified iron oxide nanoparticles decorated zinc oxide nanorods for potassium detection.

    Science.gov (United States)

    Ahn, Min-Sang; Ahmad, Rafiq; Bhat, Kiesar Sideeq; Yoo, Jin-Young; Mahmoudi, Tahmineh; Hahn, Yoon-Bong

    2018-05-15

    There are considerable interests to detect and monitor the abnormal level of minerals in water for avoiding/preventing any toxic effects after consumption. Herein, we report the fabrication of solution-gated field-effect-transistor (FET) based potassium sensor using iron oxide nanoparticles (Fe 2 O 3 NPs) modified directly grown zinc oxide nanorods (ZnO NRs). The Fe 2 O 3 NPs modification of ZnO NRs provided stability to nanorods surface and improved surface area for valinomycin immobilization. As-fabricated potassium sensor (valinomycin-Fe 2 O 3 NPs-ZnO NRs/SiO 2 /Si) provided enhanced current response with increasing potassium concentration. During sensing measurements, FET sensor showed high sensitivity (4.65 μA/μM/cm 2 ) in the linear range of 0.1 μM to 125 μM, low limit of detection (∼0.04 μM), good stability, excellent reproducibility, and favorable selectivity. Thus, good sensing performance of the FET based potassium sensor presents it as simple, low-cost, and convenient device for selective detection of potassium in solution. Copyright © 2018 Elsevier Inc. All rights reserved.

  1. Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures

    Science.gov (United States)

    Chakraborty, Chaitali; Bose, Chayanika

    2016-02-01

    The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on the electrical characteristics of metal-oxide-semiconductor (MOS) structures is reported in this communication. The size and position of the NCs are varied and study is made using Sentaurus TCAD simulation tools. In a single NC-layered MOS structure, the role of NCs is more prominent when they are placed closer to SiO2/Si-substrate interface than to SiO2/Al-gate interface. In MOS structures with larger NC dots and double layered NCs, the charge storage capacity is increased due to charging of the dielectric in the presence of NCs. Higher breakdown voltage and smaller leakage current are also obtained in the case of dual NC-layered MOS device. A new phenomenon of smearing out of the capacitance-voltage curve is observed in the presence of dual NC layer indicating generation of interface traps. An internal electric field developed between these two charged NC layers is expected to generate such interface traps at the SiO2/Si interface.

  2. Integrated Science Assessment (ISA) for Sulfur Oxides ...

    Science.gov (United States)

    This draft document provides EPA’s evaluation and synthesis of the most policy-relevant science related to the health effects of sulfur oxides. When final, it will provide a critical part of the scientific foundation for EPA’s decision regarding the adequacy of the current primary (health-based) National Ambient Air Quality Standard (NAAQS) for sulfur dioxide. The references considered for inclusion in or cited in the external review draft ISA are available at https://hero.epa.gov/hero/sulfur-oxides. The intent of the ISA, according to the CAA, is to “accurately reflect the latest scientific knowledge expected from the presence of [a] pollutant in ambient air” (U.S. Code, 1970a, 1970b). It includes an assessment of scientific research from atmospheric sciences, exposure sciences, dosimetry, mode of action, animal and human toxicology, and epidemiology. Key information and judgments formerly found in the Air Quality Criteria Documents (AQCDs) for sulfur oxides (SOx) are included; Annexes provide additional details supporting the ISA. Together, the ISA and Annexes serve to update and revise the last SOx ISA which was published in 2008.

  3. Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

    2008-10-31

    Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

  4. A Spaceborne Synthetic Aperture Radar Partial Fixed-Point Imaging System Using a Field- Programmable Gate Array-Application-Specific Integrated Circuit Hybrid Heterogeneous Parallel Acceleration Technique.

    Science.gov (United States)

    Yang, Chen; Li, Bingyi; Chen, Liang; Wei, Chunpeng; Xie, Yizhuang; Chen, He; Yu, Wenyue

    2017-06-24

    With the development of satellite load technology and very large scale integrated (VLSI) circuit technology, onboard real-time synthetic aperture radar (SAR) imaging systems have become a solution for allowing rapid response to disasters. A key goal of the onboard SAR imaging system design is to achieve high real-time processing performance with severe size, weight, and power consumption constraints. In this paper, we analyse the computational burden of the commonly used chirp scaling (CS) SAR imaging algorithm. To reduce the system hardware cost, we propose a partial fixed-point processing scheme. The fast Fourier transform (FFT), which is the most computation-sensitive operation in the CS algorithm, is processed with fixed-point, while other operations are processed with single precision floating-point. With the proposed fixed-point processing error propagation model, the fixed-point processing word length is determined. The fidelity and accuracy relative to conventional ground-based software processors is verified by evaluating both the point target imaging quality and the actual scene imaging quality. As a proof of concept, a field- programmable gate array-application-specific integrated circuit (FPGA-ASIC) hybrid heterogeneous parallel accelerating architecture is designed and realized. The customized fixed-point FFT is implemented using the 130 nm complementary metal oxide semiconductor (CMOS) technology as a co-processor of the Xilinx xc6vlx760t FPGA. A single processing board requires 12 s and consumes 21 W to focus a 50-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384.

  5. A Spaceborne Synthetic Aperture Radar Partial Fixed-Point Imaging System Using a Field- Programmable Gate Array−Application-Specific Integrated Circuit Hybrid Heterogeneous Parallel Acceleration Technique

    Directory of Open Access Journals (Sweden)

    Chen Yang

    2017-06-01

    Full Text Available With the development of satellite load technology and very large scale integrated (VLSI circuit technology, onboard real-time synthetic aperture radar (SAR imaging systems have become a solution for allowing rapid response to disasters. A key goal of the onboard SAR imaging system design is to achieve high real-time processing performance with severe size, weight, and power consumption constraints. In this paper, we analyse the computational burden of the commonly used chirp scaling (CS SAR imaging algorithm. To reduce the system hardware cost, we propose a partial fixed-point processing scheme. The fast Fourier transform (FFT, which is the most computation-sensitive operation in the CS algorithm, is processed with fixed-point, while other operations are processed with single precision floating-point. With the proposed fixed-point processing error propagation model, the fixed-point processing word length is determined. The fidelity and accuracy relative to conventional ground-based software processors is verified by evaluating both the point target imaging quality and the actual scene imaging quality. As a proof of concept, a field- programmable gate array−application-specific integrated circuit (FPGA-ASIC hybrid heterogeneous parallel accelerating architecture is designed and realized. The customized fixed-point FFT is implemented using the 130 nm complementary metal oxide semiconductor (CMOS technology as a co-processor of the Xilinx xc6vlx760t FPGA. A single processing board requires 12 s and consumes 21 W to focus a 50-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384.

  6. Slow response in gate current-voltage characteristics of metal-oxide-semiconductor structures on the 4H-SiC(000\\bar{1}) face

    Science.gov (United States)

    Kumagai, Naoki; Kimura, Hiroshi; Onishi, Yasuhiko; Okamoto, Mitsuo; Fukuda, Kenji

    2016-05-01

    We have investigated the gate current-voltage (I g-V g) characteristics of n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and p-MOS capacitors on the 4H-SiC(000\\bar{1}) face. The gate current response to a change in gate voltage has a very slow part, which has been considered to be due to slow traps in the oxide near the SiO2-SiC interface. However, we found that the slow response can be explained by fast interface traps if the traps have a relatively large concentration. Carrier injection into the interface traps results in a change in the surface potential, and this suppresses the further injection of carriers. This new model can explain many electrical properties such as the constant-current behavior in the I g-V g characteristics, which was confirmed by one-dimensional (1D) device simulation. According to this model, the interface traps will not be occupied up to the surface Fermi level within the general time scale of the measurement. In spite of the arguments described above, slow traps also probably exist near the interface between SiO2 and SiC.

  7. Integrated analysis of oxide nuclear fuel sintering

    International Nuclear Information System (INIS)

    Baranov, V.; Kuzmin, R.; Tenishev, A.; Timoshin, I.; Khlunov, A.; Ivanov, A.; Petrov, I.

    2011-01-01

    Dilatometric and thermal-gravimetric investigations have been carried out for the sintering process of oxide nuclear fuel in gaseous Ar - 8% H 2 atmosphere at temperatures up to 1600 0 C. The pressed compacts were fabricated under real production conditions of the OAO MSZ with application of two different technologies, so called 'dry' and 'wet' technologies. Effects of the grain size growth after the heating to different temperatures were observed. In order to investigate the effects produced by rate of heating on properties of sintered fuel pellets, the heating rates were varied from 1 to 8 0 C per minute. Time of isothermal overexposure at maximal temperature (1600 0 C) was about 8 hours. Real production conditions were imitated. The results showed that the sintering process of the fuel pellets produced by two technologies differs. The samples sintered under different heating rates were studied with application of scanning electronic microscopy analysis for determination of mean grain size. A simulation of heating profile for industrial furnaces was performed to reduce the beam cycles and estimate the effects of variation of the isothermal overexposure temperatures. Based on this data, an optimization of the sintering conditions was performed in operations terms of OAO MSZ. (authors)

  8. Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr Oxide/PrON/Ge Gate Stack Structure

    Science.gov (United States)

    Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Kondo, Hiroki; Nakatsuka, Osamu; Zaima, Shigeaki

    2011-04-01

    In this study, we investigated the valence state and chemical bonding state of Pr in a Pr oxide/PrON/Ge structure. We clarified the relationship between the valence state of Pr and the Pr oxide/Ge interfacial reaction using Pr oxide/Ge and Pr oxide/PrON/Ge samples. We found the formation of three Pr oxide phases in Pr oxide films; hexagonal Pr2O3 (h-Pr2O3) (Pr3+), cubic Pr2O3 (c-Pr2O3) (Pr3+), and c-PrO2 (Pr4+). We also investigated the effect of a nitride interlayer on the interfacial reaction in Pr oxide/Ge gate stacks. In a sample with a nitride interlayer (Pr oxide/PrON/Ge), metallic Pr-Pr bonds are also formed in the c-Pr2O3 film. After annealing in H2 ambient, the diffusion of Ge into Pr oxide is not observed in this sample. Pr-Pr bonds probably prevent the interfacial reaction and Ge oxide formation, considering that the oxygen chemical potential of this film is lower than that of a GeO2/Ge system. On the other hand, the rapid thermal oxidation (RTO) treatment terminates the O vacancies and defects in c-Pr2O3. As a result, c-PrO2 with tetravalent Pr is formed in the Pr oxide/PrON/Ge sample with RTO. In this sample, the leakage current density is effectively decreased in comparison with the sample without RTO. Hydrogen termination works effectively in Pr oxide/PrON/Ge samples with and without RTO, and we can achieve an interface state density of as low as 4 ×1011 eV-1·cm-2.

  9. INTEGRATION OF PHOTOCATALYTIC OXIDATION WITH AIR STRIPPING OF CONTAMINATED AQUIFERS

    Science.gov (United States)

    Bench scale laboratory studies and pilot scale studies in a simulated field-test situation were performed to evaluate the integration of gas-solid ultaviolet (UV) photocatalytic oxidation (PCO) downstream if an air stripper unit as a technology for cost-effectively treating water...

  10. Identification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements

    Science.gov (United States)

    Ling, C.

    1995-01-01

    Fixed and interface trap charges in hot-carrier degraded metal oxide semiconductor field effect transistors (MOSFET's) can be distinguished by ultraviolet light (λ=253.7 nm) annealing, and observing the resultant changes in the gate-to-drain capacitance. Trapped electrons anneal readily, resulting in large changes in the gate capacitance and the threshold voltage. This suggests a trap level below the conduction band edge of SiO2 that is smaller than the photon energy (4.9 eV). In contrast, trapped holes and interface traps do not anneal, or anneal insignificantly even after prolonged irradiation. This is consistent with a much deeper hole trap level in SiO2, generally reported.

  11. High permittivity gate dielectric materials

    CERN Document Server

    2013-01-01

    "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."

  12. Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides

    Directory of Open Access Journals (Sweden)

    Pejović Momčilo M.

    2011-01-01

    Full Text Available Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.

  13. Materials Fundamentals of Gate Dielectrics

    CERN Document Server

    Demkov, Alexander A

    2006-01-01

    This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

  14. Physical and electrical properties of thermal oxidized Sm{sub 2}O{sub 3} gate oxide thin film on Si substrate: Influence of oxidation durations

    Energy Technology Data Exchange (ETDEWEB)

    Goh, Kian Heng; Haseeb, A.S.M.A.; Wong, Yew Hoong, E-mail: yhwong@um.edu.my

    2016-05-01

    Growth of 150 nm Sm{sub 2}O{sub 3} films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried out. The crystallinity of Sm{sub 2}O{sub 3} film and existence of interfacial layer have been evaluated by X-ray diffraction, Fourier transform infrared and Raman analysis. Crystallite size and microstrain of Sm{sub 2}O{sub 3} were estimated by Williamson–Hall plot analysis. Calculated crystallite size of Sm{sub 2}O{sub 3} from Scherrer equation has similar trend with the value from Williamson–Hall plot. The presence of interfacial layer is supported by composition line scan by energy dispersive X-ray spectroscopy analysis. The surface roughness and surface topography of Sm{sub 2}O{sub 3} film were examined by atomic force microscopy analysis. The electrical characterization revealed that 15 min of oxidation durations with smoothest surface has highest breakdown voltage, lowest leakage current density and highest barrier height value. - Highlights: • Thermal oxidation of sputtered pure metallic Sm in oxygen ambient • Formation of polycrystalline Sm{sub 2}O{sub 3} and semi-polycrystalline interfacial layers • Optimization of oxidation duration of pure metallic Sm in oxygen ambient • Enhanced electrical performance with smooth surface and increased barrier height.

  15. Real-time QRS detection using integrated variance for ECG gated cardiac MRI

    Directory of Open Access Journals (Sweden)

    Schmidt Marcus

    2016-09-01

    Full Text Available During magnetic resonance imaging (MRI, a patient’s vital signs are required for different purposes. In cardiac MRI (CMR, an electrocardiogram (ECG of the patient is required for triggering the image acquisition process. However, a reliable QRS detection of an ECG signal acquired inside an MRI scanner is a challenging task due to the magnetohydrodynamic (MHD effect which interferes with the ECG. The aim of this work was to develop a reliable QRS detector usable inside the MRI which also fulfills the standards for medical devices (IEC 60601-2-27. Therefore, a novel real-time QRS detector based on integrated variance measurements is presented. The algorithm was trained on ANSI/AAMI EC13 test waveforms and was then applied to two databases with 12-lead ECG signals recorded inside and outside an MRI scanner. Reliable results for both databases were achieved for the ECG signals recorded inside (DBMRI: sensitivity Se = 99.94%, positive predictive value +P = 99.84% and outside (DBInCarT: Se = 99.29%, +P = 99.72% the MRI. Due to the accurate R-peak detection in real-time this can be used for monitoring and triggering in MRI exams.

  16. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  17. A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

    Science.gov (United States)

    Chiang, Te-Kuang

    2008-11-01

    On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential, threshold voltage, and subthreshold current for the single-halo, dual-material gate (SHDMG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is developed. The model is verified by the good agreement with a numerical simulation using the device simulator MEDICI. The model not only offers a physical insight into device physics but is also an efficient device model for the circuit simulation.

  18. Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

    Science.gov (United States)

    Wang, L. S.; Xu, J. P.; Liu, L.; Lu, H. H.; Lai, P. T.; Tang, W. M.

    2015-03-01

    InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of the TiON/TaON/InGaAs and TaON/TiON/InGaAs MOS structures are investigated and compared. Experimental results show that the former exhibits lower interface-state density (1.0 × 1012 cm-2 eV-1 at midgap), smaller gate leakage current (9.5 × 10-5 A/cm2 at a gate voltage of 2 V), larger equivalent dielectric constant (19.8), and higher reliability under electrical stress than the latter. The involved mechanism lies in the fact that the ultrathin TaON interlayer deposited on the sulfur-passivated InGaAs surface can effectively reduce the defective states and thus unpin the Femi level at the TaON/InGaAs interface, improving the electrical properties of the device.

  19. Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

    International Nuclear Information System (INIS)

    Frantsuzov, A. A.; Boyarkina, N. I.; Popov, V. P.

    2008-01-01

    Effective electron mobility μ eff in channels of metal-oxide-semiconductor transistors with a gate length L in the range of 3.8 to 0.34 μm was measured; the transistors were formed on wafers of the silicon-oninsulator type. It was found that μ eff decreases as L is decreased. It is shown that this decrease can be accounted for by the effect of series resistances of the source and drain only if it is assumed that there is a rapid increase in these resistances as the gate voltage is decreased. This assumption is difficult to substantiate. A more realistic model is suggested; this model accounts for the observed decrease in μ eff as L is decreased. The model implies that zones with a mobility lower than that in the middle part of the channel originate at the edges of the gate. An analysis shows that, in this case, the plot of the dependence of 1/μ eff on 1/L should be linear, which is exactly what is observed experimentally. The use of this plot makes it possible to determine both the electron mobility μ 0 in the middle part of the channel and the quantity A that characterizes the zones with lowered mobility at the gate’s edges.

  20. Highly Sensitive and Wearable In2O3Nanoribbon Transistor Biosensors with Integrated On-Chip Gate for Glucose Monitoring in Body Fluids.

    Science.gov (United States)

    Liu, Qingzhou; Liu, Yihang; Wu, Fanqi; Cao, Xuan; Li, Zhen; Alharbi, Mervat; Abbas, Ahmad N; Amer, Moh R; Zhou, Chongwu

    2018-02-27

    Nanoribbon- and nanowire-based field-effect transistor (FET) biosensors have stimulated a lot of interest. However, most FET biosensors were achieved by using bulky Ag/AgCl electrodes or metal wire gates, which have prevented the biosensors from becoming truly wearable. Here, we demonstrate highly sensitive and conformal In 2 O 3 nanoribbon FET biosensors with a fully integrated on-chip gold side gate, which have been laminated onto various surfaces, such as artificial arms and watches, and have enabled glucose detection in various body fluids, such as sweat and saliva. The shadow-mask-fabricated devices show good electrical performance with gate voltage applied using a gold side gate electrode and through an aqueous electrolyte. The resulting transistors show mobilities of ∼22 cm 2 V -1 s -1 in 0.1× phosphate-buffered saline, a high on-off ratio (10 5 ), and good mechanical robustness. With the electrodes functionalized with glucose oxidase, chitosan, and single-walled carbon nanotubes, the glucose sensors show a very wide detection range spanning at least 5 orders of magnitude and a detection limit down to 10 nM. Therefore, our high-performance In 2 O 3 nanoribbon sensing platform has great potential to work as indispensable components for wearable healthcare electronics.

  1. Linear gate

    International Nuclear Information System (INIS)

    Suwono.

    1978-01-01

    A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

  2. Relaxation of rabbit corpus cavernosum by selective activators of voltage-gated sodium channels: role of nitric oxide-cyclic guanosine monophosphate pathway.

    Science.gov (United States)

    Fernandes de Oliveira, Juliano; Teixeira, Cleber E; Arantes, Eliane C; de Nucci, Gilberto; Antunes, Edson

    2003-09-01

    To investigate the capacity of voltage-gated Na(+) channel activators such as batrachotoxin, aconitine, veratridine, Ts1 (formerly Tityus gamma-toxin), and brevetoxin-3 to induce relaxation of rabbit isolated corpus cavernosum (RbCC) and the pharmacologic mechanisms underlying this phenomenon. The voltage-gated Na(+) channels of the corpus cavernosum are essential for erectile function. A number of biologic toxins exert their effects by modifying the properties of these channels. Male New Zealand white rabbits were anesthetized with pentobarbital sodium. Strips of RbCC were transferred to 10-mL organ baths containing oxygenated and warmed Krebs solution. The RbCC strips were connected to force-displacement transducers, and changes in isometric force were recorded using a PowerLab 400 data acquisition system. Corporeal smooth muscle was precontracted submaximally with phenylephrine (10 micromol/L). The binding site-2 (batrachotoxin, aconitine, and veratridine) and binding site-5 (brevetoxin-3) voltage-gated Na(+) channel activators caused slow-onset RbCC relaxations, and the binding site-4 activator Ts1 produced transitory relaxations followed by a return to baseline. The Na(+)channel blockers tetrodotoxin and saxitoxin (0.1 micromol/L each) abolished the relaxations induced by these agonists. Similarly, the nitric oxide synthase inhibitor N(omega)-nitro-l-arginine methyl ester (100 micromol/L) markedly reduced the relaxations and l-arginine (1 mmol/L) restored the relaxations. The soluble guanylyl cyclase inhibitor 1H-[1,2,4] oxidiazolo[4,3-alpha] quinoxalin-1-one (10 micromol/L) reduced the relaxations, and the phosphodiesterase type 5 inhibitor sildenafil (100 nmol/L) significantly potentiated the relaxations by all activators. Our results indicate that the relaxations evoked by selective activators of voltage-gated Na(+) channels are mediated by the release of nitric oxide from nitrergic nerves and the activation of the nitric oxide-cyclic guanosine

  3. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  4. 1.25  GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit.

    Science.gov (United States)

    Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

    2017-12-15

    InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15  mm×15  mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

  5. Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays.

    Science.gov (United States)

    Marette, Alexis; Poulin, Alexandre; Besse, Nadine; Rosset, Samuel; Briand, Danick; Shea, Herbert

    2017-08-01

    Flexible high-voltage thin-film transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a flexible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implements a zinc-tin oxide channel, a thick dielectric stack, and an offset gate. At a source-drain bias of 1 kV, the HVTFT has a 20 µA on-current at a gate voltage bias of 30 V. Their electrical characteristics enable the switching of DEAs which require drive voltages of over 1 kV, making control of an array simpler in comparison to the use of external high-voltage switching. These HVTFTs are integrated in a flexible haptic display consisting of a 4 × 4 matrix of DEAs and HVTFTs. Using a single 1.4 kV supply, each DEA is independently switched by its associated HVTFT, requiring only a 30 V gate voltage for full DEA deflection. The 4 × 4 display operates well even when bent to a 5 mm radius of curvature. By enabling DEA switching at low voltages, flexible metal-oxide HVTFTs enable complex flexible systems with dozens to hundreds of independent DEAs for applications in haptics, Braille displays, and soft robotics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Verifying 4D gated radiotherapy using time-integrated electronic portal imaging: a phantom and clinical study

    Directory of Open Access Journals (Sweden)

    Slotman Ben J

    2007-08-01

    Full Text Available Abstract Background Respiration-gated radiotherapy (RGRT can decrease treatment toxicity by allowing for smaller treatment volumes for mobile tumors. RGRT is commonly performed using external surrogates of tumor motion. We describe the use of time-integrated electronic portal imaging (TI-EPI to verify the position of internal structures during RGRT delivery Methods TI-EPI portals were generated by continuously collecting exit dose data (aSi500 EPID, Portal vision, Varian Medical Systems when a respiratory motion phantom was irradiated during expiration, inspiration and free breathing phases. RGRT was delivered using the Varian RPM system, and grey value profile plots over a fixed trajectory were used to study object positions. Time-related positional information was derived by subtracting grey values from TI-EPI portals sharing the pixel matrix. TI-EPI portals were also collected in 2 patients undergoing RPM-triggered RGRT for a lung and hepatic tumor (with fiducial markers, and corresponding planning 4-dimensional CT (4DCT scans were analyzed for motion amplitude. Results Integral grey values of phantom TI-EPI portals correlated well with mean object position in all respiratory phases. Cranio-caudal motion of internal structures ranged from 17.5–20.0 mm on planning 4DCT scans. TI-EPI of bronchial images reproduced with a mean value of 5.3 mm (1 SD 3.0 mm located cranial to planned position. Mean hepatic fiducial markers reproduced with 3.2 mm (SD 2.2 mm caudal to planned position. After bony alignment to exclude set-up errors, mean displacement in the two structures was 2.8 mm and 1.4 mm, respectively, and corresponding reproducibility in anatomy improved to 1.6 mm (1 SD. Conclusion TI-EPI appears to be a promising method for verifying delivery of RGRT. The RPM system was a good indirect surrogate of internal anatomy, but use of TI-EPI allowed for a direct link between anatomy and breathing patterns.

  7. Pressure Sensitive Insulated Gate Field Effect Transistor

    Science.gov (United States)

    Suminto, James Tjan-Meng

    A pressure sensitive insulated gate field effect transistor has been developed. The device is an elevated gate field-effect-transistor. It consists of a p-type silicon substrate in which two n^+ region, the source and drain, are formed. The gate electrode is a metal film sandwiched in an insulated micro-diaphragm resembling a pill-box which covers the gate oxide, drain, and source. The space between the gate electrode and the oxide is vacuum or an air-gap. When pressure is applied on the diaphragm it deflects and causes a change in the gate capacitance, and thus modulates the conductance of the channel between source and drain. A general theory dealing with the characteristic of this pressure sensitive insulated gate field effect transistor has been derived, and the device fabricated. The fabrication process utilizes the standard integrated circuit fabrication method. It features a batch fabrication of field effect devices followed by the batch fabrication of the deposited diaphragm on top of each field effect device. The keys steps of the diaphragm fabrication are the formation of spacer layer, formation of the diaphragm layer, and the subsequent removal of the spacer layer. The chip size of the device is 600 μm x 1050 mum. The diaphragm size is 200 μm x 200 mum. Characterization of the device has been performed. The current-voltage characteristics with pressure as parameters have been demonstrated and the current-pressure transfer curves obtained. They show non-linear characteristics as those of conventional capacitive pressure sensors. The linearity of threshold voltage versus pressure transfer curves has been demonstrated. The temperature effect on the device performances has been tested. The temperature coefficient of threshold voltage, rather than the electron mobility, has dominated the temperature coefficient of the device. Two temperature compensation schemes have been tested: one method is by connecting two identical PSIGFET in a differential amplifier

  8. A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

    International Nuclear Information System (INIS)

    Luo Xiao-Rong; Hu Gang-Yi; Zhang Zheng-Yuan; Luo Yin-Chun; Fan Ye; Wang Xiao-Wei; Fan Yuan-Hang; Cai Jin-Yong; Wang Pei; Zhou Kun

    2013-01-01

    A low specific on-resistance (R on,sp ) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates, which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R on,sp of 4.151 mΩ·cm 2 (V GS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

    Science.gov (United States)

    Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

    2018-04-01

    Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

  10. Instrumentation for Gate Current Noise Measurements on sub-100 nm MOS Transistors

    CERN Document Server

    Gaioni, L; Ratti, L; Re, V; Speziali, V; Traversi, G

    2008-01-01

    This work describes a measuring system that was developed to characterize the gate current noise performances of CMOS devices with minimum feature size in the 100 nm span. These devices play an essential role in the design of present daymixedsignal integrated circuits, because of the advantages associated with the scaling process. The reduction in the gate oxide thickness brought about by CMOS technology downscaling leads to a non-negligible gate current due to direct tunneling phenomena; this current represents a noise source which requires an accurate characterization for optimum analog design. In this paper, two instruments able to perform measurements in two different ranges of gate current values will be discussed. Some of the results of gate current noise characterization will also be presented.

  11. 100-nm gate lithography for double-gate transistors

    Science.gov (United States)

    Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

    2001-09-01

    The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

  12. Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

    Science.gov (United States)

    Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

    2017-12-01

    The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

  13. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  14. A split accumulation gate architecture for silicon MOS quantum dots

    Science.gov (United States)

    Rochette, Sophie; Rudolph, Martin; Roy, Anne-Marie; Curry, Matthew; Ten Eyck, Gregory; Dominguez, Jason; Manginell, Ronald; Pluym, Tammy; King Gamble, John; Lilly, Michael; Bureau-Oxton, Chloé; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    We investigate tunnel barrier modulation without barrier electrodes in a split accumulation gate architecture for silicon metal-oxide-semiconductor quantum dots (QD). The layout consists of two independent accumulation gates, one gate forming a reservoir and the other the QD. The devices are fabricated with a foundry-compatible, etched, poly-silicon gate stack. We demonstrate 4 orders of magnitude of tunnel-rate control between the QD and the reservoir by modulating the reservoir gate voltage. Last electron charging energies of app. 10 meV and tuning of the ST splitting in the range 100-200 ueV are observed in two different split gate layouts and labs. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  15. Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers.

    Science.gov (United States)

    Wang, Lin; Chen, Xiaolong; Wang, Yang; Wu, Zefei; Li, Wei; Han, Yu; Zhang, Mingwei; He, Yuheng; Zhu, Chao; Fung, Kwok Kwong; Wang, Ning

    2013-02-07

    We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y(2)O(3) as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y(2)O(3)-covered SLG and a very few short-range impurities have been introduced by Y(2)O(3). Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y(2)O(3) layers.

  16. Nano-CMOS gate dielectric engineering

    CERN Document Server

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  17. Palladium gates for reproducible quantum dots in silicon.

    Science.gov (United States)

    Brauns, Matthias; Amitonov, Sergey V; Spruijtenburg, Paul-Christiaan; Zwanenburg, Floris A

    2018-04-09

    We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum dots, which are reproducibly fabricated. Furthermore, palladium enables us to further shrink the gate design, allowing us to perform electron transport measurements in the few-electron regime in devices comprising only two gate layers, a major technological advancement. It remains to be seen, whether the introduction of palladium gates can improve the excellent results on electron and nuclear spin qubits defined with an aluminium gate stack.

  18. Integration of Multi-Functional Oxide Thin Film Heterostructures with III-V Semiconductors

    Science.gov (United States)

    Rahman, Md. Shafiqur

    Integration of multi-functional oxide thin films with semiconductors has attracted considerable attention in recent years due to their potential applications in sensing and logic functionalities that can be incorporated in future system-on-a-chip devices. III-V semiconductor, for example, GaAs, have higher saturated electron velocity and mobility allowing transistors based on GaAs to operate at a much higher frequency with less noise compared to Si. In addition, because of its direct bandgap a number of efficient optical devices are possible and by oxide integrating with other III-V semiconductors the wavelengths can be made tunable through hetero-engineering of the bandgap. This study, based on the use of SrTiO3 (STO) films grown on GaAs (001) substrates by molecular beam epitaxy (MBE) as an intermediate buffer layer for the hetero-epitaxial growth of ferromagnetic La0.7Sr 0.3MnO3 (LSMO) and room temperature multiferroic BiFeO 3 (BFO) thin films and superlattice structures using pulsed laser deposition (PLD). The properties of the multilayer thin films in terms of growth modes, lattice spacing/strain, interface structures and texture were characterized by the in-situ reflection high energy electron diffraction (RHEED). The crystalline quality and chemical composition of the complex oxide heterostructures were investigated by a combination of X-ray diffraction (XRD) and X-ray photoelectron absorption spectroscopy (XPS). Surface morphology, piezo-response with domain structure, and ferroelectric switching observations were carried out on the thin film samples using a scanning probe microscope operated as a piezoresponse force microscopy (PFM) in the contact mode. The magnetization measurements with field cooling exhibit a surprising increment in magnetic moment with enhanced magnetic hysteresis squareness. This is the effect of exchange interaction between the antiferromagnetic BFO and the ferromagnetic LSMO at the interface. The integration of BFO materials with

  19. Effect of active-layer composition and structure on device performance of coplanar top-gate amorphous oxide thin-film transistors

    Science.gov (United States)

    Yue, Lan; Meng, Fanxin; Chen, Jiarong

    2018-01-01

    The thin-film transistors (TFTs) with amorphous aluminum-indium-zinc-oxide (a-AIZO) active layer were prepared by dip coating method. The dependence of properties of TFTs on the active-layer composition and structure was investigated. The results indicate that Al atoms acted as a carrier suppressor in IZO films. Meanwhile, it was found that the on/off current ratio (I on/off) of TFT was improved by embedding a high-resistivity AIZO layer between the low-resistivity AIZO layer and gate insulator. The improvement in I on/off was attributed to the decrease in off-state current of double-active-layer TFT due to an increase in the active-layer resistance and the contact resistance between active layer and source/drain electrode. Moreover, on-state current and threshold voltage (V th) can be mainly controlled through thickness and Al content of the low-resistivity AIZO layer. In addition, the saturation mobility (μ sat) of TFTs was improved with reducing the size of channel width or/and length, which was attributed to the decrease in trap states in the semiconductor and at the semiconductor/gate-insulator interface with the smaller channel width or/and shorter channel length. Thus, we can demonstrate excellent TFTs via the design of active-layer composition and structure by utilizing a low cost solution-processed method. The resulting TFT, operating in enhancement mode, has a high μ sat of 14.16 cm2 V‑1 s‑1, a small SS of 0.40 V/decade, a close-to-zero V th of 0.50 V, and I on/off of more than 105.

  20. Memory characteristics of cobalt-silicide nanocrystals embedded in HfO2 gate oxide for nonvolatile nanocrystal flash devices

    Science.gov (United States)

    Kim, JooHyung; Yang, JungYup; Lee, JunSeok; Hong, JinPyo

    2008-01-01

    Cobalt-silicide (CoSi2) nanocrystals (NCs) were investigated for use in charge storage for metal oxide semiconductor (MOS) devices with thin HfO2 tunneling and control oxide layers. CoSi2 NCs were synthesized by exposure of Co /Si/HfO2 tunneling oxide/Si stacks to an external UV laser. Observations from transmission electron microscopy and x-ray photoelectron spectroscopy clearly confirm the formation of CoSi2 NCs and the values of Co-Si bonding energies that are shifted 0.3eV from original values, respectively. The CoSi2 NCs in MOS devices exhibited a large memory window of 3.4V as well as efficient programming/erasing speeds, good retention, and endurance times.

  1. Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures

    Directory of Open Access Journals (Sweden)

    Chaitali Chakraborty

    2016-03-01

    Full Text Available The influence of single and double layered gold (Au nanocrystals (NC, embedded in SiO2 matrix, on the electrical characteristics of metal–oxide–semiconductor (MOS structures is reported in this communication. The size and position of the NCs are varied and study is made using Sentaurus TCAD simulation tools. In a single NC-layered MOS structure, the role of NCs is more prominent when they are placed closer to SiO2/Si−substrate interface than to SiO2/Al–gate interface. In MOS structures with larger NC dots and double layered NCs, the charge storage capacity is increased due to charging of the dielectric in the presence of NCs. Higher breakdown voltage and smaller leakage current are also obtained in the case of dual NC-layered MOS device. A new phenomenon of smearing out of the capacitance–voltage curve is observed in the presence of dual NC layer indicating generation of interface traps. An internal electric field developed between these two charged NC layers is expected to generate such interface traps at the SiO2/Si interface.

  2. Integration of a real-time tumor monitoring system into gated proton spot-scanning beam therapy: An initial phantom study using patient tumor trajectory data

    Energy Technology Data Exchange (ETDEWEB)

    Matsuura, Taeko; Miyamoto, Naoki; Takao, Seishin; Nihongi, Hideaki; Toramatsu, Chie; Sutherland, Kenneth; Suzuki, Ryusuke; Ishikawa, Masayori; Maeda, Kenichiro [Department of Medical Physics, Hokkaido University Graduate School of Medicine, Sapporo, Hokkaido, 060-8638 (Japan); Shimizu, Shinichi; Kinoshita, Rumiko; Umegaki, Kikuo; Shirato, Hiroki [Department of Radiation Medicine, Hokkaido University Graduate School of Medicine, Sapporo, Hokkaido, 060-8648 (Japan); Fujii, Yusuke; Umezawa, Masumi [Hitachi, Ltd., Hitachi Research Laboratory, 7-2-1 Omika-cho, Hitachi-shi, Ibaraki 319-1221 (Japan)

    2013-07-15

    Purpose: In spot-scanning proton therapy, the interplay effect between tumor motion and beam delivery leads to deterioration of the dose distribution. To mitigate the impact of tumor motion, gating in combination with repainting is one of the most promising methods that have been proposed. This study focused on a synchrotron-based spot-scanning proton therapy system integrated with real-time tumor monitoring. The authors investigated the effectiveness of gating in terms of both the delivered dose distribution and irradiation time by conducting simulations with patients' motion data. The clinically acceptable range of adjustable irradiation control parameters was explored. Also, the relation between the dose error and the characteristics of tumor motion was investigated.Methods: A simulation study was performed using a water phantom. A gated proton beam was irradiated to a clinical target volume (CTV) of 5 Multiplication-Sign 5 Multiplication-Sign 5 cm{sup 3}, in synchronization with lung cancer patients' tumor trajectory data. With varying parameters of gate width, spot spacing, and delivered dose per spot at one time, both dose uniformity and irradiation time were calculated for 397 tumor trajectory data from 78 patients. In addition, the authors placed an energy absorber upstream of the phantom and varied the thickness to examine the effect of changing the size of the Bragg peak and the number of required energy layers. The parameters with which 95% of the tumor trajectory data fulfill our defined criteria were accepted. Next, correlation coefficients were calculated between the maximum dose error and the tumor motion characteristics that were extracted from the tumor trajectory data.Results: With the assumed CTV, the largest percentage of the data fulfilled the criteria when the gate width was {+-}2 mm. Larger spot spacing was preferred because it increased the number of paintings. With a prescribed dose of 2 Gy, it was difficult to fulfill the

  3. Integrated cardio-thoracic imaging with ECG-Gated 64-slice multidetector-row CT: initial findings in 133 patients

    Energy Technology Data Exchange (ETDEWEB)

    Salem, Randa; Remy-Jardin, Martine; Delhaye, Damien; Khalil, Chadi; Teisseire, Antoine; Remy, Jacques [Hospital Calmette, University Center of Lille, Department of Thoracic Imaging, LILLE cedex (France); Delannoy-Deken, Valerie; Duhamel, Alain [University of Lille, Place de Verdun, Department of Medical Statistics, LILLE cedex (France)

    2006-09-15

    The purpose of this study was to investigate the possibility of assessing the underlying respiratory disease as well as cardiac function during ECG-gated CT angiography of the chest with 64-slice multidetector-row CT (MDCT). One hundred thirty-three consecutive patients in sinus rhythm with known or suspected ventricular dysfunction underwent an ECG-gated CT angiographic examination of the chest without {beta}-blockers using the following parameters: (1) collimation: 32 x 0.6 mm with z-flying focal spot for the acquisition of 64 overlapping 0.6-mm slices (Sensation 64; Siemens); rotation time: 0.33 s; pitch: 0.3; 120 kV; 200 mAs; ECG-controlled dose modulation (ECG-pulsing) and (2) 120 ml of a 35% contrast agent. Data were reconstructed: (1) to evaluate the underlying respiratory disease (1-mm thick lung and mediastinal scans reconstructed at 55% of the R-R interval; i.e., ''morphologic scans'') and (2) to determine right (RVEF) and left (LVEF) ventricular ejection fractions (short-axis systolic and diastolic images; Argus software; i.e., ''functional scans''). The mean heart rate was 73 bpm (range: 42-120) and the mean scan time was 18.11{+-}2.67 s (range: 10-27). A total of 123 examinations (92%) had both lung and mediastinal images rated as diagnostic scans, whereas 10 examinations (8%) had non-diagnostic images altered by the presence of respiratory-motion artifacts (n=4) or cyclic artifacts related to the use of a pitch value of 0.3 in patients with a very low heart rate during data acquisition (n=6). Assessment of right and left ventricular function was achievable in 124 patients (93%, 95% CI: 88-97%). For these 124 examinations, the mean RVEF was 46.10% ({+-}9.5; range: 20-72) and the mean LVEF was 58.23% ({+-}10.88; range: 20-83). In the remaining nine patients, an imprecise segmentation of the right and left ventricular cavities was considered as a limiting factor for precise calculation of end-systolic and end

  4. 78 FR 70040 - Draft Integrated Science Assessment for Nitrogen Oxides-Health Criteria

    Science.gov (United States)

    2013-11-22

    ... Integrated Science Assessment for Nitrogen Oxides--Health Criteria AGENCY: Environmental Protection Agency... Nitrogen Oxides--Health Criteria'' (EPA/600/R-13/202). The draft document was prepared by the National... Assessment for Nitrogen Oxides--Health Criteria'' will be available primarily via the Internet on NCEA's home...

  5. Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Devices on Flexible Conducting Graphene Substrates

    OpenAIRE

    Wan, Chang Jin; Wang, Wei; Zhu, Li Qiang; Liu, Yang Hui; Feng, Ping; Liu, Zhao Ping; Shi, Yi; Wan, Qing

    2016-01-01

    Flexible metal oxide/graphene oxide hybrid multi-gate neuron transistors were fabricated on flexible graphene substrates. Dendritic integrations in both spatial and temporal modes were successfully emulated, and spatiotemporal correlated logics were obtained. A proof-of-principle visual system model for emulating lobula giant motion detector neuron was investigated. Our results are of great interest for flexible neuromorphic cognitive systems.

  6. Gallium nitride on gallium oxide substrate for integrated nonlinear optics

    KAUST Repository

    Awan, Kashif M.

    2017-11-22

    Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

  7. Integrated Science Assessment (ISA) for Oxides of Nitrogen ...

    Science.gov (United States)

    This final report provides the U.S. EPA’s evaluation and synthesis of the most policy-relevant science related to the health effects of gaseous oxides of nitrogen. It provides a critical part of the scientific foundation for the U.S. EPA’s decision regarding the adequacy of the current primary (health-based) national ambient air quality standards for nitrogen dioxide. The Clean Air Act (CAA) requires EPA to periodically review and revise, as appropriate, existing air quality criteria and NAAQS. The CAA also requires an independent scientific committee to review the criteria and to advise the Administrator regarding any recommended revisions to the existing criteria and standards, as may be appropriate. The Clean Air Scientific Advisory Committee (CASAC) of EPA’s Science Advisory Board serves as this independent scientific committee. The ISA is one of the four major elements of the NAAQS review process that will inform the Agency’s final decisions; other components of the process are an integrated plan highlighting the key policy-relevant issues; a risk/exposure assessment if warranted; and an advance notice of proposed rulemaking (ANPRM) reflecting the Agency’s views regarding options to retain or revise the NO2 NAAQS based on the evaluation of key information contained in the ISA and Risk/Exposure Assessment, as well as additional appropriate technical analysis.

  8. Electrical properties of Al2O3-HfTiO laminate gate dielectric stacks with an equivalent oxide thickness below 0.8 nm

    International Nuclear Information System (INIS)

    Mikhelashvili, V.; Eisenstein, G.

    2007-01-01

    We report high quality nanolaminate films consisting of five Al 2 O 3 -HfTiO layers with a dielectric constant of about 29. The dielectric stack was deposited on unheated p-Si substrate from Al 2 O 3 and 1HfO 2 /1TiO 2 targets using an electron beam gun evaporation system without addition of oxygen. A dielectric constant for a thick HfTiO film of about 83 was also demonstrated. The electrical characteristics of as deposited structures and ones which were annealed for 5-10 min in an O 2 atmosphere at up to 950 deg. C were investigated. Two types of gate electrodes: Pt and Ti were compared. The dielectric stack which was annealed up to 500 deg. C exhibits a leakage current density as small as ∼ 1 x 10 -4 A/cm 2 at an electric of field 1.5 MV/cm for a quantum mechanical corrected equivalent oxide thickness of ∼ 0.76 nm. These values change to ∼ 1 x 10 -8 A/cm 2 and 1.82 nm respectively, after annealing at 950 deg. C for 5 min

  9. Breakdown field enhancement of Si-based MOS capacitor by post-deposition annealing of the reactive sputtered ZrOxNy gate oxide

    Science.gov (United States)

    Chew, Chun Chet; Goh, Kian Heng; Gorji, Mohammad Saleh; Tan, Chee Ghuan; Ramesh, S.; Wong, Yew Hoong

    2016-02-01

    Zirconium oxynitride (ZrOxNy) thin films were deposited on silicon (100) substrates by radio frequency-reactive magnetron sputtering in an argon-oxygen-nitrogen atmosphere. Post-deposition annealing (PDA) process was performed in argon ambient at various annealing temperatures (500, 600, 700 and 800 °C) for 15 min. Metal-oxide-semiconductor capacitors were then fabricated with aluminum as the gate electrode. The effects of PDA process on the thin film's structural and electrical properties of the samples were investigated. The structural properties of the deposited films have been evaluated by atomic force microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. On the other hand, the electrical characterization of the film was conducted by current-voltage analysis. The Raman results revealed that (600-800 °C) annealed samples comprised of crystalline multiphase films (t-ZrO2, fcc-ZrN and bcc γ-Zr2ON2). Interfacial layer consisted of Zr-Si-O, Si-O-N and Si-O phase was formed for all investigated samples, and interfacial layer growth was suppressed when annealed at lower temperatures (500 °C). Electrical result revealed that the sample annealed at a relatively low temperature of 500 °C has demonstrated the highest breakdown field which was attributed to the low surface roughness, the low interface trap and the highly amorphous multiphase film.

  10. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with silicon selectivity

    Science.gov (United States)

    Shoeb, Juline

    Plasma-surface interactions are very important in the fabrication of the nm-sized features of integrated circuits. Plasma processes are employed to produce high-resolution patterns in many of the thin layers of silicon integrated circuits and to remove masking layers while maintaining high selectivity. Integrated plasma processes consisting of sequential steps such as etch, clean and surface modification, are used in semiconductor industries. The surface in contact with the process plasma is exposed to the fluxes of neutrals, ions, molecules, electrons and photons. Modeling of surface reaction mechanisms requires the determination of the characterizations of fluxes (e.g. composition, magnitude, energy and angle) and development of the reaction mechanisms of the processes such as adsorption, reflection, bond breaking and etch product evolution, while reproducing the experimental results. When modeling the reaction mechanism for an entirely new material, the experimental data is often fragmentary. Therefore, fundamental principles such as bond energies and volatility of the etch products must be considered to develop the mechanism. In this thesis, results from a computational investigation of porous low-k SiCOH etching in fluorocarbon plasmas, damage during cleaning of CFx polymer etch residue in Ar/O2 and He/H2 plasmas, NH3 plasma pore sealing and low-k degradation due to water uptake, will be discussed. The plasma etching of HfO2 gate-stacks is also computationally investigated with an emphasis on the selectivity between HfO2 and Si.

  11. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  12. Effect of H and OH desorption and diffusion on electronic structure in amorphous In-Ga-Zn-O metal-oxide-semiconductor diodes with various gate insulators

    Science.gov (United States)

    Hino, Aya; Morita, Shinya; Yasuno, Satoshi; Kishi, Tomoya; Hayashi, Kazushi; Kugimiya, Toshihiro

    2012-12-01

    Metal-oxide-semiconductor (MOS) diodes with various gate insulators (G/Is) were characterized by capacitance-voltage characteristics and isothermal capacitance transient spectroscopy (ICTS) to evaluate the effect of H and OH desorption and diffusion on the electronic structures in amorphous In-Ga-Zn-O (a-IGZO) thin films. The density and the distribution of the space charge were found to be varied depending on the nature of the G/I. In the case of thermally grown SiO2 (thermal SiO2) G/Is, a high space-charge region was observed near the a-IGZO and G/I interface. After thermal annealing, the space-charge density in the deeper region of the film decreased, whereas remained unchanged near the interface region. The ICTS spectra obtained from the MOS diodes with the thermal SiO2 G/Is consisted of two broad peaks at around 5 × 10-4 and 3 × 10-2 s before annealing, while one broad peak was observed at around 1 × 10-4 s at the interface and at around 1 × 10-3 s in the bulk after annealing. Further, the trap density was considerably high near the interface. In contrast, the space-charge density was high throughout the bulk region of the MOS diode when the G/I was deposited by chemical vapor deposition (CVD). The ICTS spectra from the MOS diodes with the CVD G/Is revealed the existence of continuously distributed trap states, suggesting formations of high-density tail states below the conduction band minimum. According to secondary ion mass spectroscopy analyses, desorption and outdiffusion of H and OH were clearly observed in the CVD G/I sample. These phenomena could introduce structural fluctuations in the a-IGZO films, resulting in the formation of the conduction band tail states. Thin-film transistors (TFTs) with the same gate structure as the MOS diodes were fabricated to correlate the electronic properties with the TFT performance, and it was found that TFTs with the CVD G/I showed a reduced saturation mobility. These results indicate that the electronic structures

  13. Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

    Science.gov (United States)

    Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

    2018-02-01

    The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10‑2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

  14. Semiconductor growth on an oxide using a metallic surfactant and interface studies for potential gate stacks from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Reyes Huamantinco, Andrei

    2008-05-09

    In this work the epitaxial growth of germanium on SrHfO{sub 3}(001), and the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) and SrTiO{sub 3}/GaAs(001) interfaces were studied theoretically using the Projector-Augmented Wave (PAW) method. The PAW method is based on Density Functional Theory and it is implemented in the Car-Parrinello Ab-Initio Molecular Dynamics. The goal of the germanium growth on SrHfO{sub 3}(001) is to form a germanium film with low density of defects and smooth morphology, to be used as channel in a transistor. The feasibility of using a third material to achieve germanium layer-by-layer growth was investigated. The formation of an ordered strontium film on a SrO-terminated oxide substrate, to be used as template for germanium overgrowth, was studied. Deposition of germanium on the strontium 1ML template results in wetting and thus a change of the growth mode to layer-by-layer. The germanium surface is then passivated and a germanium compound is initially formed with strontium at the surface and interface. The interfacial structure and valence band offsets of the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) crystalline system were studied. The SrTiO{sub 3}/GaAs(001) crystalline interfaces with unpinned Fermi level were investigated. (orig.)

  15. Use of water vapor for suppressing the growth of unstable low-{kappa} interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

    Energy Technology Data Exchange (ETDEWEB)

    Xu, J.P. [Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074 (China); Zou, X. [School of Electromachine and Architecture Engineering, Jianghan University, Wuhan, 430056 (China); Lai, P.T. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)], E-mail: laip@eee.hku.hk; Li, C.X.; Chan, C.L. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)

    2009-03-02

    Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N{sub 2}, NH{sub 3}, NO and N{sub 2}O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO{sub x} interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N{sub 2} anneal, the wet NH{sub 3}, NO and N{sub 2}O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO{sub x}N{sub y} interlayer. Among the eight anneals, the wet N{sub 2} anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 x 10{sup 11} eV{sup -1} cm{sup -2} and gate leakage current of 2.7 x 10{sup -4} A/cm{sup 2} at V{sub g} = 1 V.

  16. The gate-keepers in a changing world: integrating microbial diversity and dynamics with global change biology

    Energy Technology Data Exchange (ETDEWEB)

    Gutknecht, Jessica L.M. [Helmholtz Centre for Environmental Research (UFZ), Leipzig (Germany); Docherty, Kathryn M. [Univ. of Oregon, Eugene, OR (United States)

    2011-11-01

    Microorganisms (Bacteria, Archaea and Fungi) are the gate-keepers of many ecosystem-scale biogeochemical cycles. Although there have been measurable changes in ecosystem function due to human activities such as greenhouse gas production, nutrient loading, land-use change, and water consumption, few studies have connected microbial community dynamics with these changes in ecosystem function. Specifically, very little is known about how global changes will induce important functional changes in microbial biodiversity. Even less is known about how microbial functional changes could alter rates of nutrient cycling or whether microbial communities have enough functional redundancy that changes will have little impact on overall process rates. The proposed symposium will provide an overview of this emerging research area, with emphasis on linking the microorganisms directly to important ecological functions under the influence of global change dynamics. The session will include both broad overviews as well as specific case-studies by researchers who examine microbial communities from a variety of taxonomic levels and from various environments. The session will begin broadly, with speakers discussing how microbial communities may inform ecosystem-scale global change studies, and help to make microbial ecological knowledge more tangible for a broad range of ecologists. The session will continue with case studies of microbial community information informing process in global change experiments. Finally, the session will close with speakers discussing how microbial community information might fit into global change models, and what types of information are useful for future studies. We have requested that speakers particularly incorporate their views on what types of microbial data is useful and informative in the context of larger ecosystem processes. We foresee that this session could serve as a focal point for global change microbial ecologists to meet and discuss their

  17. Nanofabrication Technology for Production of Quantum Nano-Electronic Devices Integrating Niobium Electrodes and Optically Transparent Gates

    Science.gov (United States)

    2018-01-01

    TECHNICAL REPORT 3086 January 2018 Nanofabrication Technology for Production of Quantum Nano-electronic Devices Integrating Niobium Electrodes...work described in this report was performed for the by the Advanced Concepts and Applied Research Branch (Code 71730) and the Science and Technology ...Applied Sciences Division iii EXECUTIVE SUMMARY This technical report demonstrates nanofabrication technology for Niobium heterostructures and

  18. Integrated Science Assessment (ISA) of Ozone and Related Photochemical Oxidants (First External Review Draft, Feb 2011)

    Science.gov (United States)

    EPA announced that the First External Review Draft of the Integrated Science Assessment for Ozone and Related Photochemical Oxidants has been made available for independent peer review and public review. This draft document represents a concise synthesis and evaluation of ...

  19. Integrated Science Assessment (ISA) of Ozone and Related Photochemical Oxidants (Second External Review Draft, Sep 2011)

    Science.gov (United States)

    EPA has released the Integrated Science Assessment of Ozone and Related Photochemical Oxidants (Second External Review Draft) for independent peer review and public review. This draft document represents a concise synthesis and evaluation of the most policy-relevant scienc...

  20. Integrated Science Assessment (ISA) of Ozone and Related Photochemical Oxidants (Third External Review Draft, Jun 2012)

    Science.gov (United States)

    EPA has released the Integrated Science Assessment of Ozone and Related Photochemical Oxidants (Third External Review Draft) for independent peer review and public review. This draft document represents a concise synthesis and evaluation of the most policy-relevant science...

  1. Integrated Science Assessment (ISA) for Oxides of Nitrogen and Sulfur - Ecological Criteria (Final Report, Dec 2008)

    Science.gov (United States)

    EPA announced the availability of the final report, Integrated Science Assessment (ISA) for Oxides of Nitrogen and Sulfur - Ecological Criteria. This document represents a concise synthesis and evaluation of the most policy-relevant science and will ultimately provide the ...

  2. Stability Study of Flexible 6,13-Bis(triisopropylsilylethynylpentacene Thin-Film Transistors with a Cross-Linked Poly(4-vinylphenol/Yttrium Oxide Nanocomposite Gate Insulator

    Directory of Open Access Journals (Sweden)

    Jin-Hyuk Kwon

    2016-03-01

    Full Text Available We investigated the electrical and mechanical stability of flexible 6,13-bis(triisopropylsilylehtynylpentacene (TIPS-pentacene thin-film transistors (TFTs that were fabricated on polyimide (PI substrates using cross-linked poly(4-vinylphenol (c-PVP and c-PVP/yttrium oxide (Y2O3 nanocomposite films as gate insulators. Compared with the electrical characteristics of TIPS-pentacene TFTs with c-PVP insulators, the TFTs with c-PVP/Y2O3 nanocomposite insulators exhibited enhancements in the drain current and the threshold voltage due to an increase in the dielectric capacitance. In electrical stability experiments, a gradual decrease in the drain current and a negative shift in the threshold voltage occurred during prolonged bias stress tests, but these characteristic variations were comparable for both types of TFT. On the other hand, the results of mechanical bending tests showed that the characteristic degradation of the TIPS-pentacene TFTs with c-PVP/Y2O3 nanocomposite insulators was more critical than that of the TFTs with c-PVP insulators. In this study, the detrimental effect of the nanocomposite insulator on the mechanical stability of flexible TIPS-pentacene TFTs was found to be caused by physical adhesion of TIPS-pentacene molecules onto the rough surfaces of the c-PVP/Y2O3 nanocomposite insulator. These results indicate that the dielectric and morphological properties of polymeric nanocomposite insulators are significant when considering practical applications of flexible electronics operated at low voltages.

  3. Models for the Configuration and Integrity of Partially Oxidized Fuel Rod Cladding at High Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Siefken, L.J.

    1999-01-01

    Models were designed to resolve deficiencies in the SCDAP/RELAP5/MOD3.2 calculations of the configuration and integrity of hot, partially oxidized cladding. These models are expected to improve the calculations of several important aspects of fuel rod behavior. First, an improved mapping was established from a compilation of PIE results from severe fuel damage tests of the configuration of melted metallic cladding that is retained by an oxide layer. The improved mapping accounts for the relocation of melted cladding in the circumferential direction. Then, rules based on PIE results were established for calculating the effect of cladding that has relocated from above on the oxidation and integrity of the lower intact cladding upon which it solidifies. Next, three different methods were identified for calculating the extent of dissolution of the oxidic part of the cladding due to its contact with the metallic part. The extent of dissolution effects the stress and thus the integrity of the oxidic part of the cladding. Then, an empirical equation was presented for calculating the stress in the oxidic part of the cladding and evaluating its integrity based on this calculated stress. This empirical equation replaces the current criterion for loss of integrity which is based on temperature and extent of oxidation. Finally, a new rule based on theoretical and experimental results was established for identifying the regions of a fuel rod with oxidation of both the inside and outside surfaces of the cladding. The implementation of these models is expected to eliminate the tendency of the SCDAP/RELAP5 code to overpredict the extent of oxidation of the upper part of fuel rods and to underpredict the extent of oxidation of the lower part of fuel rods and the part with a high concentration of relocated material. This report is a revision and reissue of the report entitled, Improvements in Modeling of Cladding Oxidation and Meltdown.

  4. Latest design of gate valves

    Energy Technology Data Exchange (ETDEWEB)

    Kurzhofer, U.; Stolte, J.; Weyand, M.

    1996-12-01

    Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

  5. Molecular logic gate arrays.

    Science.gov (United States)

    de Silva, A Prasanna

    2011-03-01

    Chemists are now able to emulate the ideas and instruments of mathematics and computer science with molecules. The integration of molecular logic gates into small arrays has been a growth area during the last few years. The design principles underlying a collection of these cases are examined. Some of these computing molecules are applicable in medical- and biotechnologies. Cases of blood diagnostics, 'lab-on-a-molecule' systems, and molecular computational identification of small objects are included. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Faber, Hendrik; Anthopoulos, Thomas D., E-mail: t.anthopoulos@imperial.ac.uk [Blackett Laboratory, Department of Physics and Centre for Plastic Electronics, Imperial College London, London SW7 2BW (United Kingdom); Münzenrieder, Niko; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology Zurich, Gloriastrasse 35, 8092 Zurich (Switzerland); Patsalas, Panos A. [Department of Physics, Laboratory of Applied Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)

    2015-03-02

    Indium oxide (In{sub 2}O{sub 3}) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm{sup 2}V{sup −1}s{sup −1} and 16 cm{sup 2}V{sup −1}s{sup −1} for coplanar and staggered architectures, respectively. Integration of In{sub 2}O{sub 3} transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In{sub 2}O{sub 3} also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In{sub 2}O{sub 3} transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.

  7. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  8. Integrated Science Assessment (ISA) for Oxides of Nitrogen ...

    Science.gov (United States)

    This draft ISA document represents a concise synthesis and evaluation of the most policy-relevant science and will ultimately provide the scientific bases for EPA’s decision on retaining or revising the current secondary standards for NO2, SO2, PM 2.5 and PM 10 since the prior release of the assessment. The intent of the ISA, according to the CAA, is to “accurately reflect the latest scientific knowledge expected from the presence of [a] pollutant in ambient air” (U.S. Code, 1970a, 1970b). It includes scientific research from atmospheric sciences, exposure and deposition, biogeochemistry, hydrology, soil science, marine science, plant physiology, animal physiology, and ecology conducted at multiple scales (e.g., population, community, ecosystem, landscape levels). Key information and judgments formerly found in the Air Quality Criteria Documents (AQCDs) for oxides of nitrogen, oxides of nitrogen and particulate matter for ecological effects are included; Appendixes provide additional details supporting the ISA. Together, the ISA and Appendixes serve to update and revise the last oxides of nitrogen and oxides of sulfur ISA which was published in 2008 and the ecological portion of the last particulate matter ISA, which was published in 2009.

  9. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    Science.gov (United States)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  10. A kinetic model for voltage-gated ion channels in cell membranes based on the path integral method

    Science.gov (United States)

    Erdem, Rıza; Ekiz, Cesur

    2005-04-01

    A kinetic model of cell membrane ion channels is proposed based on the path integral method. From the Pauli-type master equations valid on a macroscopic time scale, we derive a first-order differential equation or the kinetic equation which governs temporal evolution of the channel system along the paths of extreme probability. Using known parameters for the batrachotoxin (BTX)-modified sodium channels in squid giant axon, the time dependence of the channel activation and the voltage dependence of the corresponding time constants ( τ) are examined numerically. It is found that the channel activation relaxes to the steady (or equilibrium)-state values for a given membrane potential and the corresponding time constant reaches a maximum at a certain potential and thereafter decreases in magnitude as the membrane potential increases. A qualitative comparison between these results and the results of Hodgkin-Huxley theory, path probability method and thermodynamic models as well as the cut-open axon technique is presented. Good agreement is achieved.

  11. Electrical characteristics of AlO sub x N sub y prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications

    CERN Document Server

    Jeon, S H; Kim, H S; Noh, D Y; Hwang, H S

    2000-01-01

    In this research, the feasibility of ultrathin AlO sub x N sub y prepared by oxidation of sub 100-A-thick AlN thin films for metal-oxide-semiconductor (MOS) gate dielectric applications was investigated. Oxidation of 51-A-and 98-A-thick as-deposited AlN at 800 .deg. C was used to form 72-A-and 130-A-thick AlO sub x N sub y , respectively. Based on the capacitance-voltage (C-V) measurements of the MOS capacitor, the dielectric constants of 72 A-thick and 130 A-thick Al-oxynitride were 5.15 and 7, respectively. The leakage current of Al-oxynitride at low field was almost the same as that of thermal SiO sub 2. based on the CV data, the interface state density of Al-oxynitride was relatively higher than that of SiO sub 2. Although process optimization is still necessary, the Al-oxynitride exhibits some possibility for future MOS gate dielectric applications.

  12. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er{sub 2}O{sub 3} as a gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Ray-Ming, E-mail: rmlin@mail.cgu.edu.tw; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-10-01

    In this study, the rare earth erbium oxide (Er{sub 2}O{sub 3}) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N{sub t}) of the MOS–HEMT were 125 mV/decade and 4.3 × 10{sup 12} cm{sup −2}, respectively. The dielectric constant of the Er{sub 2}O{sub 3} layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er{sub 2}O{sub 3} MOS–HEMT. - Highlights: ► GaN/AlGaN/Er{sub 2}O{sub 3} metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er{sub 2}O{sub 3} with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I{sub ON}/I{sub OFF} ratio.

  13. Dynamic Power Reduction of Digital Circuits by ClockGating

    OpenAIRE

    Varsha Dewre; Rakesh Mandliya

    2017-01-01

    In this paper we have presented clock gating process for low power VLSI (very large scale integration) circuit design. Clock gating is one of the most quite often used systems in RTL to shrink dynamic power consumption without affecting the performance of the design. One process involves inserting gating requisites in the RTL, which the synthesis tool translates to clock gating cells in the clock-path of a register bank. This helps to diminish the switching activity on the clock network, ther...

  14. Gate Engineering in SOI LDMOS for Device Reliability

    Directory of Open Access Journals (Sweden)

    Aanand

    2016-01-01

    Full Text Available A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper. The proposed device has one poly gate and double metal gate arranged in a stepped manner, from channel to drift region. The first gate uses n+ poly (near source where as other two gates of aluminium. The first gate with thin gate oxide has good control over the channel charge. The third gate with thick gate oxide at drift region reduce gate to drain capacitance. The arrangement of second and third gates in a stepped manner in drift region spreads the electric field uniformly. Using two dimensional device simulations, the proposed SOI LDMOS is compared with conventional structure and the extended metal structure. We demonstrate that the proposed device exhibits significant enhancement in linearity, breakdown voltage, on-resistance and HCI. Double metal gate reduces the impact ionization area which helps to improve the Hot Carrier Injection effect..

  15. Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

    2010-05-31

    Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

  16. Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

    Science.gov (United States)

    Negara, M A; Kitano, M; Long, R D; McIntyre, P C

    2016-08-17

    Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs.

  17. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Besleaga, C.; Stan, G.E.; Pintilie, I. [National Institute of Materials Physics, 405A Atomistilor, 077125 Magurele-Ilfov (Romania); Barquinha, P.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Martins, R., E-mail: rm@uninova.pt [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

    2016-08-30

    Highlights: • TFTs based on IGZO channel semiconductor and AlN gate dielectric were fabricated. • AlN films – a viable and cheap gate dielectric alternative for transparent TFTs. • Influence of gate dielectric layer thickness on TFTs electrical characteristics. • No degradation of AlN gate dielectric was observed during devices stress testing. - Abstract: The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium–gallium–zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium–gallium–zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

  18. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    International Nuclear Information System (INIS)

    Besleaga, C.; Stan, G.E.; Pintilie, I.; Barquinha, P.; Fortunato, E.; Martins, R.

    2016-01-01

    Highlights: • TFTs based on IGZO channel semiconductor and AlN gate dielectric were fabricated. • AlN films – a viable and cheap gate dielectric alternative for transparent TFTs. • Influence of gate dielectric layer thickness on TFTs electrical characteristics. • No degradation of AlN gate dielectric was observed during devices stress testing. - Abstract: The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium–gallium–zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium–gallium–zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

  19. Monitoring of Postoperative Bone Healing Using Smart Trauma-Fixation Device With Integrated Self-Powered Piezo-Floating-Gate Sensors.

    Science.gov (United States)

    Borchani, Wassim; Aono, Kenji; Lajnef, Nizar; Chakrabartty, Shantanu

    2016-07-01

    Achieving better surgical outcomes in cases of traumatic bone fractures requires postoperative monitoring of changes in the growth and mechanical properties of the tissue and bones during the healing process. While current in-vivo imaging techniques can provide a snapshot of the extent of bone growth, it is unable to provide a history of the healing process, which is important if any corrective surgery is required. Monitoring the time evolution of in-vivo mechanical loads using existing technology is a challenge due to the need for continuous power while maintaining patient mobility and comfort. This paper investigates the feasibility of self-powered monitoring of the bone-healing process using our previously reported piezo-floating-gate (PFG) sensors. The sensors are directly integrated with a fixation device and operate by harvesting energy from microscale strain variations in the fixation structure. We show that the sensors can record and store the statistics of the strain evolution during the healing process for offline retrieval and analysis. Additionally, we present measurement results using a biomechanical phantom comprising of a femur fracture fixation plate; bone healing is emulated by inserting different materials, with gradually increasing elastic moduli, inside a fracture gap. The PFG sensor can effectively sense, compute, and record continuously evolving statistics of mechanical loading over a typical healing period of a bone, and the statistics could be used to differentiate between different bone-healing conditions. The proposed sensor presents a reliable objective technique to assess bone-healing progress and help decide on the removal time of the fixation device.

  20. Integrated Approaches to Drug Discovery for Oxidative Stress-Related Retinal Diseases.

    Science.gov (United States)

    Nishimura, Yuhei; Hara, Hideaki

    2016-01-01

    Excessive oxidative stress induces dysregulation of functional networks in the retina, resulting in retinal diseases such as glaucoma, age-related macular degeneration, and diabetic retinopathy. Although various therapies have been developed to reduce oxidative stress in retinal diseases, most have failed to show efficacy in clinical trials. This may be due to oversimplification of target selection for such a complex network as oxidative stress. Recent advances in high-throughput technologies have facilitated the collection of multilevel omics data, which has driven growth in public databases and in the development of bioinformatics tools. Integration of the knowledge gained from omics databases can be used to generate disease-related biological networks and to identify potential therapeutic targets within the networks. Here, we provide an overview of integrative approaches in the drug discovery process and provide simple examples of how the approaches can be exploited to identify oxidative stress-related targets for retinal diseases.

  1. New gate opening hours

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  2. Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor.

    Science.gov (United States)

    Pham, Hien Thu; Yang, Jin Ho; Lee, Don-Sung; Lee, Byoung Hun; Jeong, Hyun-Dam

    2016-03-23

    Barium titanate nanocrystals (BT NCs) were prepared under solvothermal conditions at 200 °C for 24 h. The shape of the BT NCs was tuned from nanodot to nanocube upon changing the polarity of the alcohol solvent, varying the nanosize in the range of 14-22 nm. Oleic acid-passivated NCs showed good solubility in a nonpolar solvent. The effect of size and shape of the BT NCs on the ferroelectric properties was also studied. The maximum polarization value of 7.2 μC/cm(2) was obtained for the BT-5 NC thin film. Dielectric measurements of the films showed comparable dielectric constant values of BT NCs over 1-100 kHz without significant loss. Furthermore, the bottom gate In2O3 NC thin film transistors exhibited outstanding device performance with a field-effect mobility of 11.1 cm(2) V(-1) s(-1) at a low applied gate voltage with BT-5 NC/SiO2 as the gate dielectric. The low-density trapped state was observed at the interface between the In2O3 NC semiconductor and the BT-5 NCs/SiO2 dielectric film. Furthermore, compensation of the applied gate field by an electric dipole-induced dipole field within the BT-5 NC film was also observed.

  3. FAD oxidizes the ERO1-PDI electron transfer chain: The role of membrane integrity

    International Nuclear Information System (INIS)

    Papp, Eszter; Nardai, Gabor; Mandl, Jozsef; Banhegyi, Gabor; Csermely, Peter

    2005-01-01

    The molecular steps of the electron transfer in the endoplasmic reticulum from the secreted proteins during their oxidation are relatively unknown. We present here that flavine adenine dinucleotide (FAD) is a powerful oxidizer of the oxidoreductase system, Ero1 and PDI, besides the proteins of rat liver microsomes and HepG2 hepatoma cells. Inhibition of FAD transport hindered the action of FAD. Microsomal membrane integrity was mandatory for all FAD-related oxidation steps downstream of Ero1. The PDI inhibitor bacitracin could inhibit FAD-mediated oxidation of microsomal proteins and PDI, but did not hinder the FAD-driven oxidation of Ero1. Our data demonstrated that Ero1 can utilize FAD as an electron acceptor and that FAD-driven protein oxidation goes through the Ero1-PDI pathway and requires the integrity of the endoplasmic reticulum membrane. Our findings prompt further studies to elucidate the membrane-dependent steps of PDI oxidation and the role of FAD in redox folding

  4. Heavy-ion-induced, gate-rupture in power MOSFETs

    International Nuclear Information System (INIS)

    Fischer, T.A.

    1987-01-01

    A new, heavy-ion-induced, burnout mechanism has been experimentally observed in power metal-oxide-semiconductor field-effect transistors (MOSFETs). This mechanism occurs when a heavy, charged particle passes through the gate oxide region of n- or p-channel devices having sufficient gate-to-source or gate-to-drain bias. The gate-rupture leads to significant permanent degradation of the device. A proposed failure mechanism is discussed and experimentally verified. In addition, the absolute immunity of p-channel devices to heavy-ion-induced, semiconductor burnout is demonstrated and discussed along with new, non-destructive, burnout testing methods

  5. Integrated Solid Oxide Fuel Cell Power System Characteristics Prediction

    Directory of Open Access Journals (Sweden)

    Marian GAICEANU

    2009-07-01

    Full Text Available The main objective of this paper is to deduce the specific characteristics of the CHP 100kWe Solid Oxide Fuel Cell (SOFC Power System from the steady state experimental data. From the experimental data, the authors have been developed and validated the steady state mathematical model. From the control room the steady state experimental data of the SOFC power conditioning are available and using the developed steady state mathematical model, the authors have been obtained the characteristic curves of the system performed by Siemens-Westinghouse Power Corporation. As a methodology the backward and forward power flow analysis has been employed. The backward power flow makes possible to obtain the SOFC power system operating point at different load levels, resulting as the load characteristic. By knowing the fuel cell output characteristic, the forward power flow analysis is used to predict the power system efficiency in different operating points, to choose the adequate control decision in order to obtain the high efficiency operation of the SOFC power system at different load levels. The CHP 100kWe power system is located at Gas Turbine Technologies Company (a Siemens Subsidiary, TurboCare brand in Turin, Italy. The work was carried out through the Energia da Ossidi Solidi (EOS Project. The SOFC stack delivers constant power permanently in order to supply the electric and thermal power both to the TurboCare Company and to the national grid.

  6. Draft Plan for Development of the Integrated Science Assessment for Nitrogen Oxides - Health Criteria

    Science.gov (United States)

    EPA has announced a draft development plan for the next Integrated Science Assessment (ISA) for the health effects of nitrogen oxides (NOX) which will serve as the scientific basis for review of the primary (health-based) National Ambient Air Quality Standard for nitrogen dioxide...

  7. Integrated Science Assessment (ISA) for Oxides of Nitrogen – Health Criteria (First External Review Draft, 2007)

    Science.gov (United States)

    EPA has announced that the First External Review Draft of the Integrated Science Assessment (ISA) for Oxides of Nitrogen – Health Criteria has been made available for independent peer review and public review. This draft ISA document represents a concise synthesis and eva...

  8. Integrated Science Assessment (ISA) for Oxides of Nitrogen – Health Criteria (Second External Review Draft, 2008)

    Science.gov (United States)

    EPA has announced that the Second External Review Draft of the Integrated Science Assessment (ISA) for Oxides of Nitrogen – Health Criteria has been made available for independent peer review and public review. This draft ISA document represents a concise synthesis and evaluation...

  9. Integrated Science Assessment for Oxides of Nitrogen – Health Criteria (Final Report, Jul 2008)

    Science.gov (United States)

    The Integrated Science Assessment (ISA) for Oxides of Nitrogen – Health Criteria document represents a concise synthesis and evaluation of the most policy-relevant science and will ultimately provide the scientific bases for EPA’s decision regarding whether the current standard f...

  10. Integrated Science Assessment (ISA) for Oxides of Nitrogen – Health Criteria (First External Review Draft, 2013)

    Science.gov (United States)

    EPA is announcing the availability of the First External Review Draft of the Integrated Science Assessment for Oxides of Nitrogen – Health Criteria for public comment and independent peer review. This draft document provides EPA’s evaluation and synthesis of the most polic...

  11. Integrated Science Assessment (ISA) for Sulfur Oxides – Health Criteria (First External Review Draft, Sep 2007)

    Science.gov (United States)

    EPA has announced that the First External Review Draft of the Integrated Science Assessment (ISA) for Sulfur Oxides – Health Criteria has been made available for independent peer review and public review. This draft ISA document represents a concise synthesis and evaluatio...

  12. Integrated Science Assessment (ISA) for Sulfur Oxides – Health Criteria (Final Report, Sep 2008)

    Science.gov (United States)

    EPA announced the availability of the final report, Integrated Science Assessment (ISA) for Sulfur Oxides – Health Criteria final assessment. This report represents a concise synthesis and evaluation of the most policy-relevant science and will ultimately provide the scien...

  13. Genomic and functional integrity of the hematopoietic system requires tolerance of oxidative DNA lesions

    DEFF Research Database (Denmark)

    Martín-Pardillos, Ana; Tsaalbi-Shtylik, Anastasia; Chen, Si

    2017-01-01

    , the collapse of the Rev1Xpc bone marrow was associated with progressive mitochondrial dysfunction and consequent exacerbation of oxidative stress. These data reveal that, to protect its genomic and functional integrity, the hematopoietic system critically depends on the combined activities of repair...

  14. Ex situ integration of iron oxide nanoparticles onto the exfoliated expanded graphite flakes in water suspension

    Directory of Open Access Journals (Sweden)

    Jović Nataša

    2014-01-01

    Full Text Available Hybrid structures composed of exfoliated expanded graphite (EG and iron oxide nanocrystals have been produced by an ex situ process. The iron oxide nanoparticles coated with meso-2,3-dimercaptosuccinic acid (DMSA, or poly(acrylic acid (PAA were integrated onto the exfoliated EG flakes by mixing their aqueous suspensions at room temperature under support of 1-ethyl-3-(3-dimethylaminopropylcarbodiimide (EDC and N-hydroxysuccin-nimide (NHS. EG flakes have been used both, naked and functionalized with branched polyethylenimine (PEI. Complete integration of two constituents has been achieved and mainteined stable for more than 12 months. No preferential spatial distribution of anchoring sites for attachement of iron oxide nanoparticles has been observed, regardless EG flakes have been used naked or functionalized with PEI molecules. The structural and physico-chemical characteristics of the exfoliated expanded graphite and its hybrids nanostructures has been investigated by SEM, TEM, FTIR and Raman techniques. [Projekat Ministarstva nauke Republike Srbije, br. 45015

  15. Critical Enhancement of Photothermal Effect by Integrated Nanocomposites of Gold Nanorods and Iron Oxide on Graphene Oxide

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Kumhee; Seo, Sunhwa; Kim, Bomi; Joe, Ara; Han, Hyowon; Jang, Euesoon [Kumoh National Institute of Technology, Gumi (Korea, Republic of); Kim, Jongyoung [Korea Institute of Ceramic Engineering and Technology, Icheon (Korea, Republic of)

    2013-09-15

    Irradiation of gold nanorods (GNRs) with laser light corresponding to the longitudinal surface plasmon oscillation results in rapid conversion of electromagnetic energy into heat, a phenomenon commonly known as the photothermal effect of GNRs. Herein, we propose a facile strategy for increasing the photothermal conversion efficiency of GNRs by integration to form graphene oxide (GO) nanocomposites. Moreover, conjugation of iron oxide (IO) with the GO-GNR nanohybrid allowed magnetic enrichment at a specific target site and the separated GO-IO-GNR assembly was rapidly heated by laser irradiation. The present GO-IO-GNR nanocomposites hold great promise for application in various biomedical fields, including surface enhanced Raman spectroscopy imaging, photoacoustic tomography imaging, magnetic resonance imaging, and photothermal cancer therapy.

  16. Press-pack components electro-thermo-fluidic modeling: application to the Integrated Gate Commutated Thyristor 4,5 kV-4 kA; Modelisation des couplages electro-thermo-fluidiques des composants en boitier press-pack: application a l'integrated gate commutated thyristor 4,5kV-4kA

    Energy Technology Data Exchange (ETDEWEB)

    Feral, H.

    2005-09-15

    Temperature is an important parameter when you use semi-conductors. In the multi MW power converters the semiconductor losses are upper than kW. The thermal analyzes of the semiconductor package and cooling system must be performed to understand the thermal limitations. The maximal temperature can not be upper than 150 deg. C for silicon components. The temperature variations have an impact on the component life time. The thermal phenomena in the power electronic component can not be dissociated with the electric phenomena (losses) and fluidic phenomena (cooling). An electro-thermo-fluidic modelling method has been elaborated. The method is used to study an IGCT (Integrated Gate commutated Thyristor) 4.5 kV 4 kA in the switching cell with his water cooling system. The IGCT use a press-pack floating mount package technology. The thermal contact resistances have an important impact on the heat transfer in the package. The thermal contact resistances have been estimated with a profile-metric measure and a direct measure. To validate the method and tune the model, thermal, electric and fluidic measurements are performed in an IGCT in MW switching operation. The last chapter introduces the model applications. The model is used to study the water flow direction in the IGCT cooling system. Transient simulations are used to study the temperature fluctuation on an arc furnace melting cycle. (author)

  17. A low on-resistance SOI LDMOS using a trench gate and a recessed drain

    International Nuclear Information System (INIS)

    Ge Rui; Luo Xiaorong; Jiang Yongheng; Zhou Kun; Wang Pei; Wang Qi; Wang Yuangang; Zhang Bo; Li Zhaoji

    2012-01-01

    An integrable silicon-on-insulator (SOI) power lateral MOSFET with a trench gate and a recessed drain (TGRD MOSFET) is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide (BOX) and the recessed drain reduce the specific on-resistance (R on,sp ) by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage (BV) of 97 V and R on,sp of 0.985 mΩ·cm 2 (V GS = 5 V) are obtained for a TGRD MOSFET with 6.5 μm half-cell pitch. Compared with the trench gate SOI MOSFET (TG MOSFET) and the conventional MOSFET, R on,sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain (TGTD MOSFET), BV of the TGRD MOSFET increases by 37% at the same R on,sp . (semiconductor devices)

  18. Ge /Si heteronanocrystal floating gate memory

    Science.gov (United States)

    Li, Bei; Liu, Jianlin; Liu, G. F.; Yarmoff, J. A.

    2007-09-01

    Metal oxide semiconductor field effect transistor memories with Ge /Si heteronanocrystals (HNCs) as floating gate were fabricated and characterized. Ge /Si HNCs with density of 5×1011cm-2 were grown on n-type Si (100) substrate with thin tunnel oxide on the top. Enhanced device performances including longer retention time, faster programming speed, and higher charge storage capability are demonstrated compared with Si nanocrystal (NC) memories. The erasing speed and endurance performance of Ge /Si HNC memories are similar to that of Si NC devices. The results suggest that Ge /Si HNCs may be an alternative to make further floating gate memory scaling down possible.

  19. Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition

    Science.gov (United States)

    Chang, C.-Y.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.; Takenaka, M.; Takagi, S.

    2015-08-01

    We examine the electrical properties of atomic layer deposition (ALD) La2O3/InGaAs and Al2O3/La2O3/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La2O3/InGaAs interface provides low interface state density (Dit) with the minimum value of ˜3 × 1011 cm-2 eV-1, which is attributable to the excellent La2O3 passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La2O3. In order to simultaneously satisfy low Dit and small hysteresis, the effectiveness of Al2O3/La2O3/InGaAs gate stacks with ultrathin La2O3 interfacial layers is in addition evaluated. The reduction of the La2O3 thickness to 0.4 nm in Al2O3/La2O3/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, Dit of the Al2O3/La2O3/InGaAs interfaces becomes higher than that of the La2O3/InGaAs ones, attributable to the diffusion of Al2O3 through La2O3 into InGaAs and resulting modification of the La2O3/InGaAs interface structure. As a result of the effective passivation effect of La2O3 on InGaAs, however, the Al2O3/10 cycle (0.4 nm) La2O3/InGaAs gate stacks can realize still lower Dit with maintaining small hysteresis and low leakage current than the conventional Al2O3/InGaAs MOS interfaces.

  20. Induced Cavities for Photonic Quantum Gates

    Science.gov (United States)

    Lahad, Ohr; Firstenberg, Ofer

    2017-09-01

    Effective cavities can be optically induced in atomic media and employed to strengthen optical nonlinearities. Here we study the integration of induced cavities with a photonic quantum gate based on Rydberg blockade. Accounting for loss in the atomic medium, we calculate the corresponding finesse and gate infidelity. Our analysis shows that the conventional limits imposed by the blockade optical depth are mitigated by the induced cavity in long media, thus establishing the total optical depth of the medium as a complementary resource.

  1. Forward gated-diode method for parameter extraction of MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Chenfei; He Jin; Wang Guozeng; Yang Zhang; Liu Zhiwei [Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Shenzhen 518057 (China); Ma Chenyue; Guo Xinjie; Zhang Xiufang, E-mail: frankhe@pku.edu.cn [TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871 (China)

    2011-02-15

    The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation (R-G) current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method. (semiconductor devices)

  2. High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices

    Science.gov (United States)

    Chiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Chien Liu, Shin; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-05-01

    High-κ cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance-voltage (C-V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C-V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (D it) was calculated to be 5.5 × 1011 eV-1 cm-2 at 150 °C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio (I ON/I OFF) of 1.14 × 109, and a low gate leakage current density (J leakage) of 2.85 × 10-9 A cm-2 with an improved dynamic ON-resistance (R ON), which is about one order of magnitude lower than that of a conventional HEMT.

  3. Thermodynamic Analysis of an Integrated Gasification Solid Oxide Fuel Cell Plant with a Kalina Cycle

    DEFF Research Database (Denmark)

    Pierobon, Leonardo; Rokni, Masoud

    2015-01-01

    A hybrid plant that consists of a gasification system, Solid Oxide Fuel Cells (SOFC) and a Simple Kalina Cycle (SKC) is investigated. Woodchips are introduced into a fixed bed gasification plant to produce syngas, which is then fed into an integrated SOFC-SKC plant to produce electricity. The pre......-treated fuel then enters the anode side of the SOFC. Complete fuel oxidation is ensured in a burner by off-gases exiting the SOFC stacks. Off-gases are utilized as heat source for a SKC where a mixture of ammonia and water is expanded in a turbine to produce additional electric power. Thus, a triple novel...

  4. The temperature coefficient of the resonance integral for uranium metal and oxide

    International Nuclear Information System (INIS)

    Blomberg, P.; Hellstrand, E.; Homer, S.

    1960-06-01

    The temperature coefficient of the resonance integral in uranium metal and oxide has been measured over a wide temperature range for rods with three different diameters. The results for metal agree with most earlier results from activation measurements but differ as much as a factor of two from results obtained with reactivity methods. For oxide only one measurement has been reported recently. Our value is considerably lower than the result of that measurement. The experiments will continue in order to find the reason for the large discrepancy mentioned above

  5. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    Science.gov (United States)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  6. Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability

    Science.gov (United States)

    Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Yamada, Hisashi; Takahashi, Tokio; Shimizu, Mitsuaki; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-01-01

    A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal–oxide–semiconductor (MOS) devices was developed. The direct chemical vapor deposition of SiO2 films on GaN substrates forming Ga-oxide interlayers was carried out to fabricate SiO2/GaO x /GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state densities below 1010 cm‑2 eV‑1 were obtained by postdeposition annealing, Ga diffusion into overlying SiO2 layers severely degraded the dielectric breakdown characteristics. However, this problem was found to be solved by rapid thermal processing, leading to the superior performance of the GaN-MOS devices in terms of interface quality, insulating property, and gate dielectric reliability.

  7. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Choi, Kyung Cheol; Park, Sang-Hee Ko

    2016-01-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al 2 O 3 , were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV th ) was 0 V even after a PBS time (t stress ) of 3000 s under a gate voltage (V G ) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV th value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV th values resulting from PBS quantitatively, the average oxide charge trap density (N T ) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N T resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N T near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  8. Effect of hydrogen on the integrity of aluminium–oxide interface at elevated temperatures

    KAUST Repository

    Li, Meng

    2017-02-20

    Hydrogen can facilitate the detachment of protective oxide layer off metals and alloys. The degradation is usually exacerbated at elevated temperatures in many industrial applications; however, its origin remains poorly understood. Here by heating hydrogenated aluminium inside an environmental transmission electron microscope, we show that hydrogen exposure of just a few minutes can greatly degrade the high temperature integrity of metal–oxide interface. Moreover, there exists a critical temperature of ∼150 °C, above which the growth of cavities at the metal–oxide interface reverses to shrinkage, followed by the formation of a few giant cavities. Vacancy supersaturation, activation of a long-range diffusion pathway along the detached interface and the dissociation of hydrogen-vacancy complexes are critical factors affecting this behaviour. These results enrich the understanding of hydrogen-induced interfacial failure at elevated temperatures.

  9. Biomass gasification integrated with a solid oxide fuel cell and Stirling engine

    DEFF Research Database (Denmark)

    Rokni, Masoud

    2014-01-01

    An integrated gasification solid oxide fuel cell (SOFC) and Stirling engine for combined heat and power application is analyzed. The target for electricity production is 120 kW. Woodchips are used as gasification feedstock to produce syngas, which is then used to feed the SOFC stacks for electric......An integrated gasification solid oxide fuel cell (SOFC) and Stirling engine for combined heat and power application is analyzed. The target for electricity production is 120 kW. Woodchips are used as gasification feedstock to produce syngas, which is then used to feed the SOFC stacks......-of-plant is designed and suggested. Thermodynamic analysis shows that a thermal efficiency of 42.4% based on the lower heating value (LHV) can be achieved if all input parameters are selected conservatively. Different parameter studies are performed to analyze the system behavior under different conditions...

  10. Controlled release of vanadium from titanium oxide coatings for improved integration of soft tissue implants.

    Science.gov (United States)

    Jarrell, John D; Dolly, Brandon; Morgan, Jeffrey R

    2009-07-01

    This study evaluates the potential of titanium oxide coatings for short-term delivery of vanadium for improved wound healing around implants. Titanium and vanadium oxides are bioactive agents that elicit different bioresponses in cells, ranging from implant integration and reduction of inflammation to modulation of cell proliferation and morphology. These oxides were combined in biomaterial coatings using metal-organic precursors and rapidly screened in cell-culture microplates to establish how vanadium-loading influences cell proliferation and morphology. Twenty-eight-day elution studies indicated that there was a controlled release of vanadium from stable titanium oxide matrices. Elution profiles were mathematically modeled for vanadium loading of 20-1.25% up to a period of 28 days. Scanning electron microscopy and energy dispersive spectroscopy of the coatings indicated that the vanadium was present as a nanoscale dispersion and not segregated micron-scale islands. The study confirmed that the observed bioresponse of cells was modulated by the soluble release of vanadium into the surrounding medium. Controlled release of vanadium from titania coatings may be used to influence soft-tissue integration of implants by modulating cell proliferation, attachment, inflammation, and wound healing dynamics.

  11. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.

    2011-10-12

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  12. Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

    Directory of Open Access Journals (Sweden)

    Park Byoungjun

    2011-01-01

    Full Text Available Abstract Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

  13. Interconnect-integrated solid oxide fuel cell with high temperature sinter-joining process

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Seung-Wook [KAIST Institute (KI) for Eco-Energy, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-Dong, Yuseong-Gu, Daejeon 305-701 (Korea); Jeong, Jihoon; Bae, Joongmyeon [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-Dong, Yuseong-Gu, Daejeon 305-701 (Korea); Kim, Jung Hyun [School of Chemistry, University of St. Andrews, Fife KY16 9ST (United Kingdom); Lee, Changbo [SAMSUNG Electro-Mechanics Co., 314 Maetan-3-Dong, Yeongtong-Gu, Suwon (Korea)

    2010-11-15

    In this study, a recently developed interconnect-integrated solid oxide fuel cell (SOFC) is characterized in terms of cell components, cell area enlargement, potential cathode material and mechanical/electrochemical properties. First, a high temperature sinter-joining process is used to fabricate an interconnect-integrated SOFC. This manuscript describes the interconnect material and the slurry composition design for bonding the interconnect and ceramic cell. The oxidation and thermal expansion characteristics of the starting materials of the interconnect-integrated cell, including the interconnect, metal powder of the bonding layer and metal powder/8YSZ/NiO compositions, are investigated to enhance both cell joining performance and cell stability during operation. Cell area enlargements of 50 mm x 50 mm and 100 mm x 100 mm are successfully realized using the optimized cell processing conditions. The cathode of the interconnect-integrated cell cannot be sintered in an air atmosphere due to the oxidation of the interconnect. Accordingly, a Sm{sub 1.0}Ba{sub 0.5}Sr{sub 0.5}Co{sub 2.0}O{sub 5-d}/Gd{sub 0.1}Ce{sub 0.9}O{sub 1.9} (50:50 wt%) (SBSCO50) composite cathode is selected and used as the potential in situ cathode for the interconnect-integrated SOFC. The in situ sintering properties of a conventional LSM82/8YSZ(6:4) composite cathode is also studied as the reference material. The mechanical and electrochemical performance of the resulting interconnect-integrated cell is tested. The mechanical strengths of the anode-supported cell and the interconnect-integrated cell are compared, and the electrochemical properties of the interconnect-integrated button cell and the large area (50 mm x 50 mm) interconnect-integrated cell are investigated. The button cell of a SBSCO50 composite cathode exhibits a maximum power density of 0.57 W cm{sup -2} at 800 C. The large area single repeat unit with an area of 50 mm x 50 mm with a SBSCO50 in situ cathode exhibits a maximum

  14. Integration of advanced oxidation processes at mild conditions in wet scrubbers for odourous sulphur compounds treatment.

    Science.gov (United States)

    Vega, Esther; Martin, Maria J; Gonzalez-Olmos, Rafael

    2014-08-01

    The effectiveness of different advanced oxidation processes on the treatment of a multicomponent aqueous solution containing ethyl mercaptan, dimethyl sulphide and dimethyl disulphide (0.5 mg L(-1) of each sulphur compound) was investigated with the objective to assess which one is the most suitable treatment to be coupled in wet scrubbers used in odour treatment facilities. UV/H2O2, Fenton, photo-Fenton and ozone treatments were tested at mild conditions and the oxidation efficiency obtained was compared. The oxidation tests were carried out in magnetically stirred cylindrical quartz reactors using the same molar concentration of oxidants (hydrogen peroxide or ozone). The results show that ozone and photo-Fenton are the most efficient treatments, achieving up to 95% of sulphur compounds oxidation and a mineralisation degree around 70% in 10 min. Furthermore, the total costs of the treatments taking into account the capital and operational costs were also estimated for a comparative purpose. The economic analysis revealed that the Fenton treatment is the most economical option to be integrated in a wet scrubber to remove volatile organic sulphur compounds, as long as there are no space constraints to install the required reactor volume. In the case of reactor volume limitation or retrofitting complexities, the ozone and photo-Fenton treatments should be considered as viable alternatives. Copyright © 2014 Elsevier Ltd. All rights reserved.

  15. The effect of gate length on SOI-MOSFETS operation | Baedi ...

    African Journals Online (AJOL)

    The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate ...

  16. EFFECT OF PROCESS PARAMETER VARIATION ON ft IN CONVENTIONAL AND JUNCTIONLESS GATE-ALL-AROUND DEVICES

    Directory of Open Access Journals (Sweden)

    B. LAKSHMI

    2015-08-01

    Full Text Available In this paper we have studied the effect of process variations on unity gain cut- off frequency (ft in conventional and junctionless gate-all-around (GAA transistors using TCAD simulations. Three different geometrical parameters, channel doping, source/drain doping (for conventional GAA, wire doping (for junctionless GAA and gate electrode work function are studied for their sensitivity on ft. For conventional GAA, ft is more sensitive to gate length and source/drain doping and less sensitive to gate oxide thickness, ovality and channel doping and least sensitive to gate work function variations. For junctionless GAA, ft is more sensitive to gate length and gate work function variations and less sensitive to gate oxide thickness, ovality, wire doping. The non-quasi static (NQS delay is extracted for the most sensitive parameters. The trend of NQS delay is just the reverse trend of ft.

  17. Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.

    Science.gov (United States)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2014-05-07

    Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.

  18. Linear and passive silicon diodes, isolators, and logic gates

    Science.gov (United States)

    Li, Zhi-Yuan

    2013-12-01

    Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.

  19. Advanced treatment of biologically pretreated coal gasification wastewater by a novel integration of catalytic ultrasound oxidation and membrane bioreactor.

    Science.gov (United States)

    Jia, Shengyong; Han, Hongjun; Zhuang, Haifeng; Xu, Peng; Hou, Baolin

    2015-01-01

    Laboratorial scale experiments were conducted to investigate a novel system integrating catalytic ultrasound oxidation (CUO) with membrane bioreactor (CUO-MBR) on advanced treatment of biologically pretreated coal gasification wastewater. Results indicated that CUO with catalyst of FeOx/SBAC (sewage sludge based activated carbon (SBAC) which loaded Fe oxides) represented high efficiencies in eliminating TOC as well as improving the biodegradability. The integrated CUO-MBR system with low energy intensity and high frequency was more effective in eliminating COD, BOD5, TOC and reducing transmembrane pressure than either conventional MBR or ultrasound oxidation integrated MBR. The enhanced hydroxyl radical oxidation, facilitation of substrate diffusion and improvement of cell enzyme secretion were the mechanisms for CUO-MBR performance. Therefore, the integrated CUO-MBR was the promising technology for advanced treatment in engineering applications. Copyright © 2015 Elsevier Ltd. All rights reserved.

  20. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

    Science.gov (United States)

    Prezioso, M.; Merrikh-Bayat, F.; Hoskins, B. D.; Adam, G. C.; Likharev, K. K.; Strukov, D. B.

    2015-05-01

    Despite much progress in semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex, with its approximately 1014 synapses, makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally challenging. To provide comparable complexity while operating much faster and with manageable power dissipation, networks based on circuits combining complementary metal-oxide-semiconductors (CMOSs) and adjustable two-terminal resistive devices (memristors) have been developed. In such circuits, the usual CMOS stack is augmented with one or several crossbar layers, with memristors at each crosspoint. There have recently been notable improvements in the fabrication of such memristive crossbars and their integration with CMOS circuits, including first demonstrations of their vertical integration. Separately, discrete memristors have been used as artificial synapses in neuromorphic networks. Very recently, such experiments have been extended to crossbar arrays of phase-change memristive devices. The adjustment of such devices, however, requires an additional transistor at each crosspoint, and hence these devices are much harder to scale than metal-oxide memristors, whose nonlinear current-voltage curves enable transistor-free operation. Here we report the experimental implementation of transistor-free metal-oxide memristor crossbars, with device variability sufficiently low to allow operation of integrated neural networks, in a simple network: a single-layer perceptron (an algorithm for linear classification). The network can be taught in situ using a coarse-grain variety of the delta rule algorithm to perform the perfect classification of 3 × 3-pixel black/white images into three classes (representing letters). This demonstration is an important step towards much larger and more complex memristive neuromorphic networks.

  1. Characteristics of dual-gate thin-film transistors for applications in digital radiology

    International Nuclear Information System (INIS)

    Waechter, D.; Huang, Z.; Zhao, W.; Blevis, I.; Rowlands, J.A.

    1996-01-01

    A large-area flat-panel detector for digital radiology is being developed. The detector uses an array of dual-gate thin-film transistors (TFTs) to read out X-ray-generated charge produced in an amorphous selenium (a-Se) layer. The TFTs use CdSe as the semiconductor and use the bottom gate for row selection. The top gate can be divided into a 'deliberate' gate, covering most of the channel length, and small 'parasitic' gates that consist of: overlap of source or drain metal over the top-gate oxide; and gap regions in the metal that are covered only by the a-Se. In this paper we present the properties of dual-gate TFTs and examine the effect of both the deliberate and parasitic gates on the detector operation. Various options for controlling the top-gate potential are analyzed and discussed. (author)

  2. CANDU fuel sheath integrity and oxide layer thickness determination by Eddy current technique

    International Nuclear Information System (INIS)

    Gheorghe, Gabriela; Man, Ion; Parvan, Marcel; Valeca, Serban

    2010-01-01

    This paper presents results concerning the integrity assessment of the fuel elements cladding and measurements of the oxide layer on sheaths, using the eddy current technique. Flaw detection using eddy current provides information about the integrity of fuel element sheath or presence of defects in the sheath produced by irradiation. The control equipment consists of a flaw detector with eddy currents, operable in the frequency range 10 Hz to 10 MHz, and a differential probe. The calibration of the flaw detector is done using artificial defects (longitudinal, transversal, external and internal notches, bored and unbored holes) obtained on Zircaloy-4 tubes identical to those out of which the sheath of the CANDU fuel element is manufactured (having a diameter of 13.08 mm and a wall thickness of 0.4 mm). When analyzing the behavior of the fuel elements' cladding facing the corrosion is important to know the thickness of the zirconium oxide layer. The calibration of the device measuring the thickness of the oxide layer is done using a Zircaloy-4 tube identical to that which the cladding of the CANDU fuel element is manufactured of, and calibration foils, as well. (authors)

  3. Characterization and integration of oxidation catalysts at small-scale biomass combustion furnaces

    Science.gov (United States)

    Matthes, Mirjam; Hartmann, Ingo; Schenk, Joachim; Enke, Dirk

    2017-10-01

    Small-scale biomass combustion is a major part in heat supply from renewable resources. Drawbacks to the environmental background are the pollutant emissions, which are formed as a result of maloperation, suboptimal furnace construction or the biomass fuel composition. The named primary factors can be influenced by several measures, but the achievable emission results are limited. To provide real clean combustion technology with nearly zero pollutant emissions, secondary emission reduction measures are necessary. One of these measures is the application of catalytic flue gas cleaning as integrated or downstream solution. Catalysis is already a state of the art element in many processes and following this, some studies reveal already its potential to reduce CO, VOC as well as particle emissions in small-scale biomass combustion systems. However, a wide application of catalysts in wood combustion units didn't take place so far, because the challenging process conditions demand a proper integration and highly stable and active catalytic materials. For the achievement of well-functioning combustion systems with catalyst solutions a procedure for application-oriented characterization is presented. Initial investigations with commercially available catalysts have shown that the gas hourly space velocity and the oxygen content have the most significant influence on the conversion rate of carbon monoxide and nitrogen oxide. Two samples with different active phases have been compared, one with solely metal oxides and one with metal oxides and noble metals. The one with noble metals showed as expected a higher activity, but also a higher stability.

  4. 77 FR 7149 - Notice of Workshop and Call for Information on Integrated Science Assessment for Oxides of Nitrogen

    Science.gov (United States)

    2012-02-10

    ... Information on Integrated Science Assessment for Oxides of Nitrogen AGENCY: Environmental Protection Agency... part of the review of the primary National Ambient Air Quality Standards (NAAQS) for oxides of nitrogen... indicator for NO X that has been used for the standard is nitrogen dioxide (NO 2 ). Thus, the ISA is...

  5. Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

    International Nuclear Information System (INIS)

    Li, Liuan; Wang, Qingpeng; Nakamura, Ryosuke; Jiang, Ying; Ao, Jin-Ping; Xu, Yonggang

    2015-01-01

    In this paper, the influence of deposition conditions and post annealing upon the device performance of sputtering-deposited TiN/AlO/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors is reported. The metal-oxide-semiconductor structure on GaN with AlO deposited in a medium O 2 /Ar ratio possessed the smallest interfacial state density and reverse leakage current. Metal-oxide-semiconductor heterostructure field-effect transistors with a small hysteresis and a low leakage current were obtained by depositing AlO with a medium O 2 /Ar ratio and post-annealing at 600 °C for 1 min. After annealing, the maximum transconductance shows some decrease, resulting in a decrease of saturation drain current. (paper)

  6. VKCDB: Voltage-gated potassium channel database

    Directory of Open Access Journals (Sweden)

    Gallin Warren J

    2004-01-01

    Full Text Available Abstract Background The family of voltage-gated potassium channels comprises a functionally diverse group of membrane proteins. They help maintain and regulate the potassium ion-based component of the membrane potential and are thus central to many critical physiological processes. VKCDB (Voltage-gated potassium [K] Channel DataBase is a database of structural and functional data on these channels. It is designed as a resource for research on the molecular basis of voltage-gated potassium channel function. Description Voltage-gated potassium channel sequences were identified by using BLASTP to search GENBANK and SWISSPROT. Annotations for all voltage-gated potassium channels were selectively parsed and integrated into VKCDB. Electrophysiological and pharmacological data for the channels were collected from published journal articles. Transmembrane domain predictions by TMHMM and PHD are included for each VKCDB entry. Multiple sequence alignments of conserved domains of channels of the four Kv families and the KCNQ family are also included. Currently VKCDB contains 346 channel entries. It can be browsed and searched using a set of functionally relevant categories. Protein sequences can also be searched using a local BLAST engine. Conclusions VKCDB is a resource for comparative studies of voltage-gated potassium channels. The methods used to construct VKCDB are general; they can be used to create specialized databases for other protein families. VKCDB is accessible at http://vkcdb.biology.ualberta.ca.

  7. Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

    Science.gov (United States)

    Khound, Sagarika; Sarma, Ranjit

    2018-01-01

    We have reported here on the design, processing and dielectric properties of pentacene-based organic thin film transitors (OTFTs) with a bilayer gate dilectrics of crosslinked PVA/Nd2O3 which enables low-voltage organic thin film operations. The dielectric characteristics of PVA/Nd2O3 bilayer films are studied by capacitance-voltage ( C- V) and current-voltage ( I- V) curves in the metal-insulator-metal (MIM) structure. We have analysed the output electrical responses and transfer characteristics of the OTFT devices to determine their performance of OTFT parameters. The mobility of 0.94 cm2/Vs, the threshold voltage of - 2.8 V, the current on-off ratio of 6.2 × 105, the subthreshold slope of 0.61 V/decade are evaluated. Low leakage current of the device is observed from current density-electric field ( J- E) curve. The structure and the morphology of the device are studied using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The study demonstrates an effective way to realize low-voltage, high-performance OTFTs at low cost.

  8. Heavy-ion induced current through an oxide layer

    International Nuclear Information System (INIS)

    Takahashi, Yoshihiro; Ohki, Takahiro; Nagasawa, Takaharu; Nakajima, Yasuhito; Kawanabe, Ryu; Ohnishi, Kazunori; Hirao, Toshio; Onoda, Shinobu; Mishima, Kenta; Kawano, Katsuyasu; Itoh, Hisayoshi

    2007-01-01

    In this paper, the heavy-ion induced current in MOS structure is investigated. We have measured the transient gate current in a MOS capacitor and a MOSFET induced by single heavy-ions, and found that a transient current can be observed when the semiconductor surface is under depletion condition. In the case of MOSFET, a transient gate current with both positive and negative peaks is observed if the ion hits the gate area, and that the total integrated charge is almost zero within 100-200 ns after irradiation. From these results, we conclude that the radiation-induced gate current is dominated by a displacement current. We also discuss the generation mechanism of the radiation-induced current through the oxide layer by device simulation

  9. Synthesis methods, microscopy characterization and device integration of nanoscale metal oxide semiconductors for gas sensing.

    Science.gov (United States)

    Vander Wal, Randy L; Berger, Gordon M; Kulis, Michael J; Hunter, Gary W; Xu, Jennifer C; Evans, Laura

    2009-01-01

    A comparison is made between SnO(2), ZnO, and TiO(2) single-crystal nanowires and SnO(2) polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H(2), are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine activation energies for the catalyst-assisted systems.

  10. Integrating Metal-Oxide-Decorated CNT Networks with a CMOS Readout in a Gas Sensor

    Directory of Open Access Journals (Sweden)

    Suhwan Kim

    2012-02-01

    Full Text Available We have implemented a tin-oxide-decorated carbon nanotube (CNT network gas sensor system on a single die. We have also demonstrated the deposition of metallic tin on the CNT network, its subsequent oxidation in air, and the improvement of the lifetime of the sensors. The fabricated array of CNT sensors contains 128 sensor cells for added redundancy and increased accuracy. The read-out integrated circuit (ROIC was combined with coarse and fine time-to-digital converters to extend its resolution in a power-efficient way. The ROIC is fabricated using a 0.35 µm CMOS process, and the whole sensor system consumes 30 mA at 5 V. The sensor system was successfully tested in the detection of ammonia gas at elevated temperatures.

  11. Inversion gate capacitance of undoped single-gate and double-gate field-effect transistor geometries in the extreme quantum limit

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Amlan, E-mail: amajumd@us.ibm.com [IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2015-05-28

    We present first-principle analytical derivations and numerically modeled data to show that the gate capacitance per unit gate area C{sub G} of extremely thin undoped-channel single-gate and double-gate field-effect transistor geometries in the extreme quantum limit with single-subband occupancy can be written as 1/C{sub G} = 1/C{sub OX} + N{sub G}/C{sub DOS} + N{sub G}/ηC{sub WF}, where N{sub G} is the number of gates, C{sub OX} is the oxide capacitance per unit area, C{sub DOS} is the density-of-states capacitance per unit area, C{sub WF} is the wave function spreading capacitance per unit area, and η is a constant on the order of 1.

  12. Gate replacement at the Upper Lake Falls development

    International Nuclear Information System (INIS)

    Chen, C.T.; Locke, A.E.; Brown, E.R.

    1998-01-01

    Nova Scotia Power's integrated approach to dam safety was discussed. One of the two intake gates at Unit 1 of the Upper Falls Power Plant on the Mersey River was replaced in 1997 as part of the Utility's upgrading program. In the event of governor failure or turbine runaway, the new roller gate will allow operators to close the original sliding gate first under a more-or-less balanced head condition, and then to close the new roller gate under a full-flow condition. The planning, design and construction of the new roller gate is described. One of the two head gates of Unit 2 at the same station will be replaced in a similar fashion in the fall of 1998. 4 refs., 7 figs

  13. Thermodynamic Investigation of an Integrated Gasification Plant with Solid Oxide Fuel Cell and Steam Cycles

    DEFF Research Database (Denmark)

    Rokni, Masoud

    2012-01-01

    A gasification plant is integrated on the top of a solid oxide fuel cell (SOFC) cycle, while a steam turbine (ST) cycle is used as a bottoming cycle for the SOFC plant. The gasification plant was fueled by woodchips to produce biogas and the SOFC stacks were fired with biogas. The produced gas...... was rather clean for feeding to the SOFC stacks after a simple cleaning step. Because all the fuel cannot be burned in the SOFC stacks, a burner was used to combust the remaining fuel. The off-gases from the burner were then used to produce steam for the bottoming steam cycle in a heat recovery steam...

  14. Thermodynamic Analysis of a Woodchips Gasification Integrated with Solid Oxide Fuel Cell and Stirling Engine

    DEFF Research Database (Denmark)

    Rokni, Masoud

    2013-01-01

    Integrated gasification Solid Oxide Fuel Cell (SOFC) and Stirling engine for combined heat and power application is analysed. The target for electricity production is 120 kW. Woodchips are used as gasification feedstock to produce syngas which is utilized for feeding the SOFC stacks for electricity...... and suggested. Thermodynamic analysis shows that a thermal efficiency of 42.4% based on LHV (lower heating value) can be achieved. Different parameter studies are performed to analysis system behaviour under different conditions. The analysis show that increasing fuel mass flow from the design point results...

  15. Notes on the design of experiments and beam diagnostics with synchrotron light detected by a gated photomultiplier for the Fermilab superconducting electron linac and for the Integrable Optics Test Accelerator (IOTA)

    Energy Technology Data Exchange (ETDEWEB)

    Stancari, Giulio [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Romanov, Aleksandr [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Ruan, Jinhao [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Santucci, James [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Thurman-Keup, Randy [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Valishev, Alexander [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

    2017-11-08

    We outline the design of beam experiments for the electron linac at the Fermilab Accelerator Science and Technology (FAST) facility and for the Integrable Optics Test Accelerator (IOTA), based on synchrotron light emitted by the electrons in bend dipoles, detected with gated microchannel-plate photomultipliers (MCP-PMTs). The system can be used both for beam diagnostics (e.g., beam intensity with full dynamic range, turn-by-turn beam vibrations, etc.) and for scientific experiments, such as the direct observation of the time structure of the radiation emitted by single electrons in a storage ring. The similarity between photon pulses and spectrum at the downstream end of the electron linac and in the IOTA ring allows one to test the apparatus during commissioning of the linac.

  16. Introduction of audio gating to further reduce organ motion in breathing synchronized radiotherapy

    International Nuclear Information System (INIS)

    Kubo, H. Dale; Wang Lili

    2002-01-01

    With breathing synchronized radiotherapy (BSRT), a voltage signal derived from an organ displacement detector is usually displayed on the vertical axis whereas the elapsed time is shown on the horizontal axis. The voltage gate window is set on the breathing voltage signal. Whenever the breathing signal falls between the two gate levels, a gate pulse is produced to enable the treatment machine. In this paper a new gating mechanism, audio (or time-sequence) gating, is introduced and is integrated into the existing voltage gating system. The audio gating takes advantage of the repetitive nature of the breathing signal when repetitive audio instruction is given to the patient. The audio gating is aimed at removing the regions of sharp rises and falls in the breathing signal that cannot be removed by the voltage gating. When the breathing signal falls between voltage gate levels as well as between audio-gate levels, the voltage- and audio-gated radiotherapy (ART) system will generate an AND gate pulse. When this gate pulse is received by a linear accelerator, the linear accelerator becomes 'enabled' for beam delivery and will deliver the beam when all other interlocks are removed. This paper describes a new gating mechanism and a method of recording beam-on signal, both of which are, configured into a laptop computer. The paper also presents evidence of some clinical advantages achieved with the ART system

  17. Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

    DEFF Research Database (Denmark)

    Forsén, Esko Sebastian; Abadal, G.; Ghatnekar-Nilsson, S.

    2005-01-01

    Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions...... and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic...... excitation, capacitive detection, and amplification of the resonance signal directly on the chip. (c) 2005 American Institute of Physics....

  18. Soil nitrous oxide and methane fluxes in integrated crop-livestock systems in subtropics

    International Nuclear Information System (INIS)

    Dieckow, Jeferson; Pergher, Maico; Moraes, Anibal de; Piva, Jonatas Thiago; Bayer, Cimélio; Sakadevan, Karuppan

    2015-01-01

    Integrated crop-livestock (ICL) system is an agricultural practice in which crop-pasture rotation is carried out in the same field over time. In Brasil, ICL associated with no-tillage farming is increasingly gaining importance as a soil use strategy that improves food production (grain, milk and beef) and economic returns to farmers. Integrated crop-livestock-forestry (ICLF) is a recent modification of ICL in Brazil, with the inclusion of trees cultivation aiming at additional wood production and offering thermal comfort to livestock (Porfírio-da-Silva & Moraes, 2010). However, despite the increasing importance of ICL, little information is available on how this system may affect soil-atmosphere exchange of nitrous oxide (N 2 O) and methane (CH 4 )

  19. Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

    Science.gov (United States)

    Zhang, Kexiong; Liao, Meiyong; Imura, Masataka; Nabatame, Toshihide; Ohi, Akihiko; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

    2016-12-01

    The electrical hysteresis in current-voltage (I-V) and capacitance-voltage characteristics was observed in an atomic-layer-deposited Al2O3/p-GaN metal-oxide-semiconductor capacitor (PMOSCAP). The absolute minimum leakage currents of the PMOSCAP for forward and backward I-V scans occurred not at 0 V but at -4.4 and +4.4 V, respectively. A negative flat-band voltage shift of 5.5 V was acquired with a capacitance step from +4.4 to +6.1 V during the forward scan. Mg surface accumulation on p-GaN was demonstrated to induce an Mg-Ga-Al-O oxidized layer with a trap density on the order of 1013 cm-2. The electrical hysteresis is attributed to the hole trapping and detrapping process in the traps of the Mg-Ga-Al-O layer via the Poole-Frenkel mechanism.

  20. Gated community Na Krutci

    Czech Academy of Sciences Publication Activity Database

    Hnídková, Vendula

    2012-01-01

    Roč. 91, č. 12 (2012), s. 750-752 ISSN 0042-4544 Institutional support: RVO:68378033 Keywords : Gated community * Czech contemporary architecture * Kuba Pilař Subject RIV: AL - Art, Architecture , Cultural Heritage

  1. Reversible gates and circuits descriptions

    Science.gov (United States)

    Gracki, Krzystof

    2017-08-01

    This paper presents basic methods of reversible circuit description. To design reversible circuit a set of gates has to be chosen. Most popular libraries are composed of three types of gates so called CNT gates (Control, NOT and Toffoli). The gate indexing method presented in this paper is based on the CNT gates set. It introduces a uniform indexing of the gates used during synthesis process of reversible circuits. The paper is organized as follows. Section 1 recalls basic concepts of reversible logic. In Section 2 and 3 a graphical representation of the reversible gates and circuits is described. Section 4 describes proposed uniform NCT gates indexing. The presented gate indexing method provides gate numbering scheme independent of lines number of the designed circuit. The solution for a circuit consisting of smaller number of lines is a subset of solution for a larger circuit.

  2. Advanced insulated gate bipolar transistor gate drive

    Science.gov (United States)

    Short, James Evans [Monongahela, PA; West, Shawn Michael [West Mifflin, PA; Fabean, Robert J [Donora, PA

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  3. The human respiratory gate

    Science.gov (United States)

    Eckberg, Dwain L.

    2003-01-01

    Respiratory activity phasically alters membrane potentials of preganglionic vagal and sympathetic motoneurones and continuously modulates their responsiveness to stimulatory inputs. The most obvious manifestation of this 'respiratory gating' is respiratory sinus arrhythmia, the rhythmic fluctuations of electrocardiographic R-R intervals observed in healthy resting humans. Phasic autonomic motoneurone firing, reflecting the throughput of the system, depends importantly on the intensity of stimulatory inputs, such that when levels of stimulation are low (as with high arterial pressure and sympathetic activity, or low arterial pressure and vagal activity), respiratory fluctuations of sympathetic or vagal firing are also low. The respiratory gate has a finite capacity, and high levels of stimulation override the ability of respiration to gate autonomic responsiveness. Autonomic throughput also depends importantly on other factors, including especially, the frequency of breathing, the rate at which the gate opens and closes. Respiratory sinus arrhythmia is small at rapid, and large at slow breathing rates. The strong correlation between systolic pressure and R-R intervals at respiratory frequencies reflects the influence of respiration on these two measures, rather than arterial baroreflex physiology. A wide range of evidence suggests that respiratory activity gates the timing of autonomic motoneurone firing, but does not influence its tonic level. I propose that the most enduring significance of respiratory gating is its use as a precisely controlled experimental tool to tease out and better understand otherwise inaccessible human autonomic neurophysiological mechanisms.

  4. Engine-integrated solid oxide fuel cells for efficient electrical power generation on aircraft

    Science.gov (United States)

    Waters, Daniel F.; Cadou, Christopher P.

    2015-06-01

    This work investigates the use of engine-integrated catalytic partial oxidation (CPOx) reactors and solid oxide fuel cells (SOFCs) to reduce fuel burn in vehicles with large electrical loads like sensor-laden unmanned air vehicles. Thermodynamic models of SOFCs, CPOx reactors, and three gas turbine (GT) engine types (turbojet, combined exhaust turbofan, separate exhaust turbofan) are developed and checked against relevant data and source material. Fuel efficiency is increased by 4% and 8% in the 50 kW and 90 kW separate exhaust turbofan systems respectively at only modest cost in specific power (8% and 13% reductions respectively). Similar results are achieved in other engine types. An additional benefit of hybridization is the ability to provide more electric power (factors of 3 or more in some cases) than generator-based systems before encountering turbine inlet temperature limits. A sensitivity analysis shows that the most important parameters affecting the system's performance are operating voltage, percent fuel oxidation, and SOFC assembly air flows. Taken together, this study shows that it is possible to create a GT-SOFC hybrid where the GT mitigates balance of plant losses and the SOFC raises overall system efficiency. The result is a synergistic system with better overall performance than stand-alone components.

  5. Catalyst development and systems analysis of methanol partial oxidation for the fuel processor - fuel cell integration

    Energy Technology Data Exchange (ETDEWEB)

    Newson, E.; Mizsey, P.; Hottinger, P.; Truong, T.B.; Roth, F. von; Schucan, Th.H. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1999-08-01

    Methanol partial oxidation (pox) to produce hydrogen for mobile fuel cell applications has proved initially more successful than hydrocarbon pox. Recent results of catalyst screening and kinetic studies with methanol show that hydrogen production rates have reached 7000 litres/hour/(litre reactor volume) for the dry pox route and 12,000 litres/hour/(litre reactor volume) for wet pox. These rates are equivalent to 21 and 35 kW{sub th}/(litre reactor volume) respectively. The reaction engineering problems remain to be solved for dry pox due to the significant exotherm of the reaction (hot spots of 100-200{sup o}C), but wet pox is essentially isothermal in operation. Analyses of the integrated fuel processor - fuel cell systems show that two routes are available to satisfy the sensitivity of the fuel cell catalysts to carbon monoxide, i.e. a preferential oxidation reactor or a membrane separator. Targets for individual system components are evaluated for the base and best case systems for both routes to reach the combined 40% efficiency required for the integrated fuel processor - fuel cell system. (author) 2 figs., 1 tab., 3 refs.

  6. Application of the integral method to modelling the oxidation of defected fuel elements

    International Nuclear Information System (INIS)

    Kolar, M.

    1995-06-01

    The starting point for this report is the discrepancy reported in previous work between the reaction-diffusion calculations and the CEX-1 experiment, which involves storage of defected fuel elements in air at 150 deg C. This discrepancy is considerably diminished here by a more critical choice of theoretical parameters, and by taking into account the fact that different CEX-1 fuel elements were oxidized at very different rates and that the fuel element used previously for comparison with theoretical calculations actually underwent two limited-oxygen-supply cycles. Much better agreement is obtained here between the theory and the third, unlimited-air, storage period of the CEX-1 experiment. The approximate integral method is used extensively for the solution of the one-dimensional diffusion moving-boundary problems that may describe various storage periods of the CEX-1 experiment. In some cases it is easy to extend this method to arbitrary precision by using higher moments of the diffusion equation. Using this method, the validity of quasi-steady-state approximation is verified. Diffusion-controlled oxidation is also studied. In this case, for the unlimited oxygen supply, the integral method leads to an exact analytical solution for linear geometry, and to a good analytical approximation of the solution for the spherically symmetric geometry. These solutions may have some application in the analysis of experiments on the oxidation of small UO 2 fragments or powders when the individual UO 2 grains may be considered to be approximately spherical. (author). 23 refs., 5 tabs., 11 figs

  7. Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics

    OpenAIRE

    Zeumault, Andre

    2017-01-01

    Primarily used as transparent electrodes in solar-cells, more recently, physical vapor deposited(PVD) transparent conductive oxide (TCO) materials (e.g. ZnO, In2O3 and SnO2)also serve as the active layer in thin-film transistor (TFT) technology for modern liquidcrystaldisplays. Relative to a-Si:H and organic TFTs, commercial TCO TFTs have reducedoff-state leakage and higher on-state currents. Additionally, since they are transparent, theyhave the added potential to enable fully transparent TF...

  8. Illumination of Double Snapback Mechanism in High Voltage Operating Grounded Gate Extended Drain N-type Metal-Oxide-Semiconductor Field Effects Transistor Electro-Static Discharge Protection Devices

    Science.gov (United States)

    Kim, Kil Ho; Jung, Yong Icc; Shim, Jin Seop; So, Hyung Tae; Lee, Ji Hyun; Hwang, Lee Yeun; Park, Jin Won

    2004-10-01

    High current behaviors of the ‘grounded gate extended drain N-type metal-oxide-semiconductor field effects transistor’ (GG_EDNMOS) electro-static discharge (ESD) protection devices are analyzed. Both the transmission line pulse (TLP) data and the thermal incorporated 2-dimensional simulation analyses demonstrate a characteristic double snapback phenomenon after triggering of biploar junction transistor (BJT) operation. This implies the co-existence of two different on-states in high current region. The 2nd on-state, characterized by extremely low snapback holding voltage and low on-resistance, seems to be responsible for the vulnerability of the device under ESD stress. Simulation based contour analyses reveal that combination of BJT operation and deep electron channeling induced by high electron injection gives rise to the 2nd on-state. Thus, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Further studies reveal that the N-drift implant dose, among various process parameters, is a critical factor to determine the formation of deep electron channeling and consequential occurrence of the 2nd on-state. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

  9. Physiorack: an integrated MRI safe/conditional, gas delivery, respiratory gating, and subject monitoring solution for structural and functional assessments of pulmonary function.

    Science.gov (United States)

    Halaweish, Ahmed F; Charles, H Cecil

    2014-03-01

    To evaluate the use of a modular MRI conditional respiratory monitoring and gating solution, designed to facilitate proper monitoring of subjects' vital signals and their respiratory efforts, during free-breathing and breathheld 19F, oxygen-enhanced, and Fourier-decomposition MRI-based acquisitions. All Imaging was performed on a Siemens TIM Trio 3 Tesla MRI scanner, following Institutional Review Board approval. Gas delivery is accomplished through the use of an MR compatible pneumotachometer, in conjunction with two three-way pneumatically controlled Hans Rudolph Valves. The pneumatic valves are connected to Douglas bags used as the gas source. A mouthpiece (+nose clip) or an oro-nasal Hans Rudolph disposable mask is connected following the pneumatic valve to minimize dead-space and provide an airtight seal. Continuous monitoring/sampling of inspiratory and expiratory oxygen and carbon dioxide levels at the mouthpiece/mask is achieved through the use of an Oxigraf gas analyzer. Forty-four imaging sessions were successfully monitored, during Fourier-decomposition (n=3), fluorine-enhanced (n=29), oxygen-enhanced, and ultra short echo (n=12) acquisitions. The collected waveforms, facilitated proper monitoring and coaching of the subjects. We demonstrate an inexpensive, off-the-shelf solution for monitoring these signals, facilitating assessments of lung function. Monitoring of respiratory efforts and exhaled gas concentrations assists in understanding the heterogeneity of lung function visualized by gas imaging. Copyright © 2013 Wiley Periodicals, Inc.

  10. Biomass gasification integrated with a solid oxide fuel cell and Stirling engine

    International Nuclear Information System (INIS)

    Rokni, Masoud

    2014-01-01

    An integrated gasification solid oxide fuel cell (SOFC) and Stirling engine for combined heat and power application is analyzed. The target for electricity production is 120 kW. Woodchips are used as gasification feedstock to produce syngas, which is then used to feed the SOFC stacks for electricity production. Unreacted hydrocarbons remaining after the SOFC are burned in a catalytic burner, and the hot off-gases from the burner are recovered in a Stirling engine for electricity and heat production. Domestic hot water is used as a heat sink for the Stirling engine. A complete balance-of-plant is designed and suggested. Thermodynamic analysis shows that a thermal efficiency of 42.4% based on the lower heating value (LHV) can be achieved if all input parameters are selected conservatively. Different parameter studies are performed to analyze the system behavior under different conditions. The analysis shows that the decreasing number of stacks from a design viewpoint, indicating that plant efficiency decreases but power production remains nearly unchanged. Furthermore, the analysis shows that there is an optimum value for the utilization factor of the SOFC for the suggested plant design with the suggested input parameters. This optimum value is approximately 65%, which is a rather modest value for SOFC. In addition, introducing a methanator increases plant efficiency slightly. If SOFC operating temperature decreases due to new technology then plant efficiency will slightly be increased. Decreasing gasifier temperature, which cannot be controlled, causes the plant efficiency to increase also. - Highlights: • Design of integrated gasification with solid oxide fuel and Stirling engine. • Important plant parameters study. • Plant running on biomass with and without methanator. • Thermodynamics of integrated gasification SOFC-Stirling engine plants

  11. Gallium arsenide processing for gate array logic

    Science.gov (United States)

    Cole, Eric D.

    1989-01-01

    The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

  12. Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations

    International Nuclear Information System (INIS)

    Habicht, Stefan; Feste, Sebastian; Zhao, Qing-Tai; Buca, Dan; Mantl, Siegfried

    2012-01-01

    Nanowire-array metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated along and crystal directions on (001) un-/strained silicon-on-insulator substrates. Lateral strain relaxation through patterning was employed to transform biaxial tensile strain into uniaxial tensile strain along the nanowire. Devices feature ideal subthreshold swings and maximum on-current/off-current ratios of 10 11 for n and p-type transistors on both substrates. Electron and hole mobilities were extracted by split C–V method. For p-MOSFETs an increased mobility is observed for channel direction devices compared to devices. The n-MOSFETs showed a 45% increased electron mobility compared to devices. The comparison of strained and unstrained n-MOSFETs along and clearly demonstrates improved electron mobilities for strained channels of both channel orientations.

  13. Iron Gates Natural Park - Administration and Management

    Directory of Open Access Journals (Sweden)

    Sînziana Pauliuc

    2016-11-01

    Full Text Available This paper analyzes the management and administration of one of the largest, beautiful and complex natural parks from Romania, the Iron Gates Natural Park. The management plan is a frame of integration of the biodiversity conservation problems and protection of the natural and cultural environment that also supports socio-economic development of Iron Gates Natural Park. It is also an instrument of dialog between the institutions which coordinate this area. The management plan is a document approved by H.G 1048/2013 and it resulted after consulting the interested factors of the area (city halls, local and central authorities, civil society. The administration of Iron Gates Natural Park has a new structure, founded in 2003 and is working as a subunit of Forest-National Administration (Romsilva, which assures the necessary personal and equipment for administrating the area. The area has the status of: Natural Park, Natura 2000 and Ramsar site. The forest represents 65% of the total area, 98% being a state property. Analysing Iron Gates Natural Park documents (Iron Gates Natural Park management plan, scientific council and park administration documents, visits and observations within park, we can conclude that the park has a good administration leaded by the scientific councils, who also achieved many successful European projects.

  14. Sol-gel zinc oxide humidity sensors integrated with a ring oscillator circuit on-a-chip.

    Science.gov (United States)

    Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

    2014-10-28

    The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip. The humidity sensor is composed of a sensitive film and branch interdigitated electrodes. The sensitive film is zinc oxide prepared by sol-gel method. After completion of the CMOS process, the sensor requires a post-process to remove the sacrificial oxide layer and to coat the zinc oxide film on the interdigitated electrodes. The capacitance of the sensor changes when the sensitive film adsorbs water vapor. The circuit is used to convert the capacitance of the humidity sensor into the oscillation frequency output. Experimental results show that the output frequency of the sensor changes from 84.3 to 73.4 MHz at 30 °C as the humidity increases 40 to 90%RH.

  15. Sol-Gel Zinc Oxide Humidity Sensors Integrated with a Ring Oscillator Circuit On-a-Chip

    Directory of Open Access Journals (Sweden)

    Ming-Zhi Yang

    2014-10-01

    Full Text Available The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip. The humidity sensor is composed of a sensitive film and branch interdigitated electrodes. The sensitive film is zinc oxide prepared by sol-gel method. After completion of the CMOS process, the sensor requires a post-process to remove the sacrificial oxide layer and to coat the zinc oxide film on the interdigitated electrodes. The capacitance of the sensor changes when the sensitive film adsorbs water vapor. The circuit is used to convert the capacitance of the humidity sensor into the oscillation frequency output. Experimental results show that the output frequency of the sensor changes from 84.3 to 73.4 MHz at 30 °C as the humidity increases 40 to 90%RH.

  16. Advanced treatment of biologically pretreated coal gasification wastewater by a novel integration of heterogeneous Fenton oxidation and biological process.

    Science.gov (United States)

    Xu, Peng; Han, Hongjun; Zhuang, Haifeng; Hou, Baolin; Jia, Shengyong; Xu, Chunyan; Wang, Dexin

    2015-04-01

    Laboratorial scale experiments were conducted in order to investigate a novel system integrating heterogeneous Fenton oxidation (HFO) with anoxic moving bed biofilm reactor (ANMBBR) and biological aerated filter (BAF) process on advanced treatment of biologically pretreated coal gasification wastewater (CGW). The results indicated that HFO with the prepared catalyst (FeOx/SBAC, sewage sludge based activated carbon (SBAC) which loaded Fe oxides) played a key role in eliminating COD and COLOR as well as in improving the biodegradability of raw wastewater. The surface reaction and hydroxyl radicals (OH) oxidation were the mechanisms for FeOx/SBAC catalytic reaction. Compared with ANMBBR-BAF process, the integrated system was more effective in abating COD, BOD5, total phenols (TPs), total nitrogen (TN) and COLOR and could shorten the retention time. Therefore, the integrated system was a promising technology for engineering applications. Copyright © 2015 Elsevier Ltd. All rights reserved.

  17. Single electron transistor with P-type sidewall spacer gates.

    Science.gov (United States)

    Lee, Jung Han; Li, Dong Hua; Lee, Joung-Eob; Kang, Kwon-Chil; Kim, Kyungwan; Park, Byung-Gook

    2011-07-01

    A single-electron transistor (SET) is one of the promising solutions to overcome the scaling limit of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Up to now, various kinds of SETs are being proposed and SETs with a dual gate (DG) structure using an electrical potential barrier have been demonstrated for room temperature operation. To operate DG-SETs, however, extra bias of side gates is necessary. It causes new problems that the electrode for side gates and the extra bias for electrical barrier increase the complexity in circuit design and operation power consumption, respectively. For the reason, a new mechanism using work function (WF) difference is applied to operate a SET at room temperature by three electrodes. Its structure consists of an undoped active region, a control gate, n-doped source/drain electrodes, and metal/silicide or p-type silicon side gates, and a SET with metal/silicide gates or p-type silicon gates forms tunnel barriers induced by work function between an undoped channel and grounded side gates. Via simulation, the effectiveness of the new mechanism is confirmed through various silicide materials that have different WF values. Furthermore, by considering the realistic conditions of the fabrication process, SET with p-type sidewall spacer gates was designed, and its brief fabrication process was introduced. The characteristics of its electrical barrier and the controllability of its control gate were also confirmed via simulation. Finally, a single-hole transistor with n-type sidewall spacer gates was designed.

  18. Spin gating electrical current

    Science.gov (United States)

    Ciccarelli, C.; Zârbo, L. P.; Irvine, A. C.; Campion, R. P.; Gallagher, B. L.; Wunderlich, J.; Jungwirth, T.; Ferguson, A. J.

    2012-09-01

    The level of the chemical potential is a fundamental parameter of the electronic structure of a physical system, which consequently plays an important role in defining the properties of active electrical devices. We directly measure the chemical potential shift in the relativistic band structure of the ferromagnetic semiconductor (Ga,Mn)As, controlled by changes in its magnetic order parameter. Our device comprises a non-magnetic aluminum single electron channel capacitively coupled to the (Ga,Mn)As gate electrode. The chemical potential shifts of the gate are directly read out from the shifts in the Coulomb blockade oscillations of the single electron transistor. The experiments introduce a concept of spin gating electrical current. In our spin transistor spin manipulation is completely removed from the electrical current carrying channel.

  19. Cardiac gated ventilation

    Science.gov (United States)

    Hanson, C. William, III; Hoffman, Eric A.

    1995-05-01

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. We evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50msec scan aperture. Multislice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. We observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a nonfailing model of the heart.

  20. High performance graphene oxide-based humidity sensor integrated on a photonic crystal cavity

    Science.gov (United States)

    Gan, Xuetao; Zhao, Chenyang; Yuan, Qingchen; Fang, Liang; Li, Yongjiang; Yin, Jianbo; Ma, Xiaoyan; Zhao, Jianlin

    2017-04-01

    We report a high performance relative humidity (RH) microsensor based on a few-layer graphene oxide (GO) flake coated photonic crystal (PC) cavity. Since the GO layer is highly water-reactive and interacts with the evanescent cavity mode strongly, the exposure of the GO-PC cavity in varied humidity levels results in significant resonant wavelength shifts, showing a slope of 0.68 nm/%RH in the range of 60%-85%RH. By monitoring the power variation of the cavity reflection, the microsensor presents an ultrahigh sensitivity exceeding 3.9 dB/%RH. Relying on the unimpeded permeation of water molecules through the GO interlayers and microscale distribution of the cavity mode, the integrated sensor has a response time less than 100 ms, which promises successful measurements of human breathing. Combining with the ease of fabrication, this high performance RH sensor provides great potentials in applications requiring optical access, device compactness, and fast dynamic response.

  1. Dual Pressure versus Hybrid Recuperation in an Integrated Solid Oxide Fuel Cell Cycle – Steam Cycle

    DEFF Research Database (Denmark)

    Rokni, Masoud

    2014-01-01

    A SOFC (solid oxide fuel cell) cycle running on natural gas was integrated with a ST (steam turbine) cycle. The fuel is desulfurized and pre-reformed before entering the SOFC. A burner was used to combust the remaining fuel after the SOFC stacks. The off-gases from the burner were used to produce...... steam in a HRSG (heat recovery steam generator). The bottoming steam cycle was modeled with two configurations: (1) a simple single pressure level and (2) a dual pressure level with both a reheat and a pre-heater. The SOFC stacks in the present SOFC-ST hybrid cycles were not pressurized. The dual...... pressure configuration steam cycle combined with SOFC cycle (SOFC-ST) was new and has not been studied previously. In each of the configuration, a hybrid recuperator was used to recovery the remaining energy of the off-gases after the HRSG. Thus, four different plants system setups were compared to each...

  2. High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

    Science.gov (United States)

    Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

    2015-03-25

    A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Mechanism of cysteine oxidation by peroxynitrite: An integrated experimental and theoretical study.

    Science.gov (United States)

    Zeida, Ari; González Lebrero, Mariano C; Radi, Rafael; Trujillo, Madia; Estrin, Darío A

    2013-11-01

    Since peroxynitrite was identified as a pathophysiological agent it has been implicated in a great variety of cellular processes. Particularly, peroxynitrite mediated oxidation of cellular thiol-containing compounds such as Cys residues, is a key event which has been extensively studied. Although great advances have been accomplished, the reaction is not completely understood at the atomic level. Aiming to shed light on this subject, we present an integrated kinetic and theoretical study of the oxidation of free Cys by peroxynitrite. We determined pH-independent thermodynamic activation parameters, namely those corresponding to the reaction between the reactive species: Cys thiolate and peroxynitrous acid. We found a pH-independent activation energy of 8.2 ± 0.6 kcal/mol. Simulations were performed using state of the art hybrid quantum-classical (QM-MM) molecular dynamics simulations. Our results are consistent with a SN2 mechanism, with Cys sulfenic acid and nitrite anion as products. The activation barrier is mostly due to the alignment of sulfur's thiolate atom with the oxygen atoms of the peroxide, along with the concomitant charge reorganization and important changes in the solvation profile. This work provides an atomic detailed description of the reaction mechanism and a framework to understand the environment effects on peroxynitrite reactivity with protein thiols. Copyright © 2013 Elsevier Inc. All rights reserved.

  4. Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

    Directory of Open Access Journals (Sweden)

    Hojjatollah Sarvari

    2016-01-01

    Full Text Available Short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors (GNRFETs are studied based on the atomistic pz orbital model for the Hamiltonian of graphene nanoribbon using the nonequilibrium Green’s function formalism. A tight-binding Hamiltonian with an atomistic pz orbital basis set is used to describe the atomistic details in the channel of the GNRFETs. We have investigated the vital short channel effect parameters such as Ion and Ioff, the threshold voltage, the subthreshold swing, and the drain induced barrier lowering versus the channel length and oxide thickness of the GNRFETs in detail. The gate capacitance and the transconductance of both devices are also computed in order to calculate the intrinsic cut-off frequency and switching delay of GNRFETs. Furthermore, the effects of doping of the channel on the threshold voltage and the frequency response of the double-gate GNRFET are discussed. We have shown that the single-gate GNRFET suffers more from short channel effects if compared with those of the double-gate structure; however, both devices have nearly the same cut-off frequency in the range of terahertz. This work provides a collection of data comparing different features of short channel effects of the single gate with those of the double gate GNRFETs. The results give a very good insight into the devices and are very useful for their digital applications.

  5. Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor

    Science.gov (United States)

    Yuan, Heng; Zhang, Ji-Xing; Zhang, Chen; Zhang, Ning; Xu, Li-Xia; Ding, Ming; Patrick, J. Clarke

    2015-02-01

    A low gate voltage operated multi-emitter-dot gated lateral bipolar junction transistor (BJT) ion sensor is proposed. The proposed device is composed of an arrayed gated lateral BJT, which is driven in the metal-oxide-semiconductor field-effect transistor (MOSFET)-BJT hybrid operation mode. Further, it has multiple emitter dots linked to each other in parallel to improve ionic sensitivity. Using hydrogen ionic solutions as reference solutions, we conduct experiments in which we compare the sensitivity and threshold voltage of the multi-emitter-dot gated lateral BJT with that of the single-emitter-dot gated lateral BJT. The multi-emitter-dot gated lateral BJT not only shows increased sensitivity but, more importantly, the proposed device can be operated under very low gate voltage, whereas the conventional ion-sensitive field-effect transistors cannot. This special characteristic is significant for low power devices and for function devices in which the provision of a gate voltage is difficult.

  6. Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

    Science.gov (United States)

    Bak, Jun Yong; Kim, So-Jung; Byun, Chun-Won; Pi, Jae-Eun; Ryu, Min-Ki; Hwang, Chi Sun; Yoon, Sung-Min

    2015-09-01

    Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in order to meet requirements of both higher operation speed and longer retention time. While the program speed and memory window were improved for the device with a thinner tunneling layer, a long retention time was obtained only for the device with a tunneling layer thicker than 5 nm. The carrier concentration and charge-trap densities were optimized in the 30-nm-thick CT layer. It was observed that 10-nm-thick tunneling, 30-nm-thick CT, and 50-nm-thick blocking layers were the best configuration for our proposed CTM-TFTs, where a memory on/off margin higher than 107 was obtained, and a memory margin of 6.6 × 103 was retained even after the lapse of 105 s. The second strategy was to examine the effects of the geometrical relations between the CT and active layers for the applications of memory elements embedded in circuitries. The CTM-TFTs fabricated without an overlap between the CT layer and the drain electrode showed an enhanced program speed by the reduced parasitic capacitance. The drain-bias disturbance for the memory off-state was effectively suppressed even when a higher read-out drain voltage was applied. Appropriate device design parameters, such as the film thicknesses of each component layer and the geometrical relations between them, can improve the memory performances and expand the application fields of the proposed CTM-TFTs.

  7. Single photon sources using oxide apertured micropillars with integrated electrical control for novel functionalities

    Science.gov (United States)

    Stoltz, Nicholas G.

    The goal of this thesis is to apply the oxide apertured vertical cavity laser structure in order to explore quantum dot-microcavity coupling for the development of novel single photon sources (SPS). Optical microcavities combined with active emitters provide an opportunity to study the light matter interaction on a fundamental level. Edward Purcell first theorized in 1947 that the spontaneous emission (SE) rate of an optical emitter could be modified in the presence of an optical cavity. As semiconductor microcavity technology has advanced many optoelectronic devices have benefited from the increased SE rates predicted by the Purcell effect. The development of quantum emitters on an integrated semiconductor platform in the form of semiconductor self-assembled quantum dots (QDs) has expanded applications in the field. Coupling atomic emitters to optical microcavities in the solid state allows for the study of cavity quantum electrodynamics and the fabrication single photon (SP) devices. Optoelectronic devices providing non-classical light states have a broad range of applications in quantum information science, including quantum key distribution systems, quantum lithography, and quantum computing. Here, the oxide apertured micropillar approach demonstrates high quality microcavities with cavity quality factors up to 50,000 and measured Purcell enhancements of 10. In addition the inherent advantages provided by the oxide apertured micropillar, specifically high collection efficiency, have produced SPSs with record high SP rates and quantum efficiencies representing a six-fold improvement over reported values. In addition we have developed and integrated a scheme allowing for on-chip electrical control of SP devices for the implementation of SPSs with novel functionalities. The active electrical control of QD charge state has allowed for the elimination of dark states which severely limit SP rates and efficiencies. The active electrical tuning of QD emission energy

  8. Possibilities Of Opening Up the Stage-Gate Model

    Directory of Open Access Journals (Sweden)

    Biljana Stošić

    2014-12-01

    Full Text Available The paper presents basic elements of the Stage-Gate and Open innovation models, and possible connection of these two, resulting in what is frequently called an “Open Stage-Gate” model. This connection is based on opening up the new product development process and integration of the open innovation principles with the Stage-Gate concept, facilitating the import and export of information and technologies. Having in mind that the Stage Gate has originally been classified as the third generation model of innovation, the paper is dealing with the capabilities for applying the sixth generation Open innovation principles in today’s improved and much more flexible phases and gates of the Stage Gate. Lots of innovative companies are actually using both models in their NPD practice, looking for the most appropriate means of opening up the well-known closed innovation, especially in the domain of ideation through co-creation.

  9. Gate Leakage Reduction by Clocked Power Supply of Adiabatic Logic Circuits

    Directory of Open Access Journals (Sweden)

    Ph. Teichmann

    2005-01-01

    Full Text Available Losses due to gate-leakage-currents become more dominant in new technologies as gate leakage currents increase exponentially with decreasing gate oxide thickness. The most promising Adiabatic Logic (AL families use a clocked power supply with four states. Hence, the full VDD voltage drops over an AL gate only for a quarter of the clock cycle, causing a full gate leakage only for a quarter of the clock period. The rising and falling ramps of the clocked power supply lead to an additional energy consumption by gate leakage. This energy is smaller than the fraction caused by the constant VDD drop, because the gate leakage exponentially depends on the voltage across the oxide. To obtain smaller energy consumption, Improved Adiabatic Logic (IAL has been introduced. IAL swaps all n- and p-channel transistors. The logic blocks are built of p-channel devices which show gate tunneling currents significantly smaller than in n-channel devices. Using IAL instead of conventional AL allows an additional reduction of the energy consumption caused by gate leakage. Simulations based on a 90nm CMOS process show a lowering in gate leakage energy consumption for AL by a factor of 1.5 compared to static CMOS. For IAL the factor is up to 4. The achievable reduction varies depending on the considered AL family and the complexity of the gate.

  10. Analysis of gate underlap channel double gate MOS transistor for electrical detection of bio-molecules

    Science.gov (United States)

    Ajay; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

    2015-12-01

    In this paper, an analytical model for gate drain underlap channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG-MOSFET) for label free electrical detection of biomolecules has been proposed. The conformal mapping technique has been used to derive the expressions for surface potential, lateral electric field, energy bands (i.e. conduction and valence band) and threshold voltage (Vth). Subsequently a full drain current model to analyze the sensitivity of the biosensor has been developed. The shift in the threshold voltage and drain current (after the biomolecules interaction with the gate underlap channel region of the MOS transistor) has been used as a sensing metric. All the characteristic trends have been verified through ATLAS (SILVACO) device simulation results.

  11. Integrated demonstration of molten salt oxidation with salt recycle for mixed waste treatment

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, P.C.

    1997-11-01

    Molten Salt Oxidation (MSO) is a thermal, nonflame process that has the inherent capability of completely destroying organic constituents of mixed wastes, hazardous wastes, and energetic materials while retaining inorganic and radioactive constituents in the salt. For this reason, MSO is considered a promising alternative to incineration for the treatment of a variety of organic wastes. Lawrence Livermore National Laboratory (LLNL) has prepared a facility and constructed an integrated pilot-scale MSO treatment system in which tests and demonstrations are performed under carefully controlled (experimental) conditions. The system consists of a MSO processor with dedicated off-gas treatment, a salt recycle system, feed preparation equipment, and equipment for preparing ceramic final waste forms. This integrated system was designed and engineered based on laboratory experience with a smaller engineering-scale reactor unit and extensive laboratory development on salt recycle and final forms preparation. In this paper we present design and engineering details of the system and discuss its capabilities as well as preliminary process demonstration data. A primary purpose of these demonstrations is identification of the most suitable waste streams and waste types for MSO treatment.

  12. Integrated demonstration of molten salt oxidation with salt recycle for mixed waste treatment

    International Nuclear Information System (INIS)

    Hsu, P.C.

    1997-01-01

    Molten Salt Oxidation (MSO) is a thermal, nonflame process that has the inherent capability of completely destroying organic constituents of mixed wastes, hazardous wastes, and energetic materials while retaining inorganic and radioactive constituents in the salt. For this reason, MSO is considered a promising alternative to incineration for the treatment of a variety of organic wastes. Lawrence Livermore National Laboratory (LLNL) has prepared a facility and constructed an integrated pilot-scale MSO treatment system in which tests and demonstrations are performed under carefully controlled (experimental) conditions. The system consists of a MSO processor with dedicated off-gas treatment, a salt recycle system, feed preparation equipment, and equipment for preparing ceramic final waste forms. This integrated system was designed and engineered based on laboratory experience with a smaller engineering-scale reactor unit and extensive laboratory development on salt recycle and final forms preparation. In this paper we present design and engineering details of the system and discuss its capabilities as well as preliminary process demonstration data. A primary purpose of these demonstrations is identification of the most suitable waste streams and waste types for MSO treatment

  13. Series resistance and gate leakage correction for improved border trap analysis of Al2O3/InGaAs gate stacks

    Science.gov (United States)

    Tang, K.; Scheuermann, A. G.; Zhang, L.; McIntyre, P. C.

    2017-09-01

    As the size of electronic devices scales down, series resistance (RS) and gate leakage effects are commonly observed in electrical measurement of metal-oxide-semiconductor gate stacks. As a result of their effects on device characteristics, these phenomena complicate the analysis of border trap density (Nbt) in the gate insulator using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. In this work, we develop methods to correct for the effects of RS and gate leakage in Al2O3/InGaAs gate stacks to enable reliable fitting of C-V and G-V data to determine Nbt. When tested using data from Pd/Al2O3/InGaAs gate stacks, the RS correction method successfully removes the RS-induced high frequency dispersion in the accumulation region of the C-V curves and provides an accurate extraction of RS and Nbt. The gate leakage correction method is tested on gate stacks with high gate leakage current of ˜25 μA at 2 V bias, and is found to effectively fit capacitance and conductance data, to achieve consistent Nbt extraction. The compatibility of these two methods is confirmed by analysis of data obtained from gate stacks with both substantial RS and gate leakage.

  14. Gate valve performance prediction

    International Nuclear Information System (INIS)

    Harrison, D.H.; Damerell, P.S.; Wang, J.K.; Kalsi, M.S.; Wolfe, K.J.

    1994-01-01

    The Electric Power Research Institute is carrying out a program to improve the performance prediction methods for motor-operated valves. As part of this program, an analytical method to predict the stem thrust required to stroke a gate valve has been developed and has been assessed against data from gate valve tests. The method accounts for the loads applied to the disc by fluid flow and for the detailed mechanical interaction of the stem, disc, guides, and seats. To support development of the method, two separate-effects test programs were carried out. One test program determined friction coefficients for contacts between gate valve parts by using material specimens in controlled environments. The other test program investigated the interaction of the stem, disc, guides, and seat using a special fixture with full-sized gate valve parts. The method has been assessed against flow-loop and in-plant test data. These tests include valve sizes from 3 to 18 in. and cover a considerable range of flow, temperature, and differential pressure. Stem thrust predictions for the method bound measured results. In some cases, the bounding predictions are substantially higher than the stem loads required for valve operation, as a result of the bounding nature of the friction coefficients in the method

  15. Effects of Nitric Oxide on Voltage-Gated K⁺ Currents in Human Cardiac Fibroblasts through the Protein Kinase G and Protein Kinase A Pathways but Not through S-Nitrosylation.

    Science.gov (United States)

    Bae, Hyemi; Choi, Jeongyoon; Kim, Young-Won; Lee, Donghee; Kim, Jung-Ha; Ko, Jae-Hong; Bang, Hyoweon; Kim, Taeho; Lim, Inja

    2018-03-12

    This study investigated the expression of voltage-gated K⁺ (K V ) channels in human cardiac fibroblasts (HCFs), and the effect of nitric oxide (NO) on the K V currents, and the underlying phosphorylation mechanisms. In reverse transcription polymerase chain reaction, two types of K V channels were detected in HCFs: delayed rectifier K⁺ channel and transient outward K⁺ channel. In whole-cell patch-clamp technique, delayed rectifier K⁺ current (I K ) exhibited fast activation and slow inactivation, while transient outward K⁺ current (I to ) showed fast activation and inactivation kinetics. Both currents were blocked by 4-aminopyridine. An NO donor, S -nitroso- N -acetylpenicillamine (SNAP), increased the amplitude of I K in a concentration-dependent manner with an EC 50 value of 26.4 µM, but did not affect I to . The stimulating effect of SNAP on I K was blocked by pretreatment with 1H-(1,2,4)oxadiazolo[4,3-a]quinoxalin-1-one (ODQ) or by KT5823. 8-bromo-cyclic GMP stimulated the I K . The stimulating effect of SNAP on I K was also blocked by pretreatment with KT5720 or by SQ22536. Forskolin and 8-bromo-cyclic AMP each stimulated I K . On the other hand, the stimulating effect of SNAP on I K was not blocked by pretreatment of N -ethylmaleimide or by DL-dithiothreitol. Our data suggest that NO enhances I K , but not I to , among K V currents of HCFs, and the stimulating effect of NO on I K is through the PKG and PKA pathways, not through S -nitrosylation.

  16. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    Directory of Open Access Journals (Sweden)

    Takeshi Aoki

    2015-08-01

    Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  17. The four-gate transistor

    Science.gov (United States)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  18. Stanford, Duke, Rice,... and Gates?

    Science.gov (United States)

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  19. Integrated Science Assessment (ISA) for Oxides of Nitrogen and Sulfur - Environmental Criteria (Second External Review Draft, Aug 2008)

    Science.gov (United States)

    EPA has announced that the Second External Review Draft of the Integrated Science Assessment (ISA) for Oxides of Nitrogen and Sulfur - Environmental Criteria has been made available for independent peer review and public review. This draft ISA document represents a conci...

  20. Integrated Science Assessment (ISA) for Oxides of Nitrogen and Sulfur - Environmental Criteria (First External Review Draft, Dec 2007)

    Science.gov (United States)

    EPA is announcing that the First External Review Draft of the Integrated Science Assessment (ISA) for Oxides of Nitrogen and Sulfur – Environmental Criteria has been made available for independent peer review and public review. This draft ISA document represents a concise ...

  1. Design of a thermally integrated bioethanol-fueled solid oxide fuel cell system integrated with a distillation column

    Science.gov (United States)

    Jamsak, W.; Douglas, P. L.; Croiset, E.; Suwanwarangkul, R.; Laosiripojana, N.; Charojrochkul, S.; Assabumrungrat, S.

    Solid oxide fuel cell systems integrated with a distillation column (SOFC-DIS) have been investigated in this study. The MER (maximum energy recovery) network for SOFC-DIS system under the base conditions (C EtOH = 25%, EtOH recovery = 80%, V = 0.7 V, fuel utilization = 80%, T SOFC = 1200 K) yields Q Cmin = 73.4 and Q Hmin = 0 kW. To enhance the performance of SOFC-DIS, utilization of internal useful heat sources from within the system (e.g. condenser duty and hot water from the bottom of the distillation column) and a cathode recirculation have been considered in this study. The utilization of condenser duty for preheating the incoming bioethanol and cathode recirculation for SOFC-DIS system were chosen and implemented to the SOFC-DIS (CondBio-CathRec). Different MER designs were investigated. The obtained MER network of CondBio-CathRec configuration shows the lower minimum cold utility (Q Cmin) of 55.9 kW and total cost index than that of the base case. A heat exchanger loop and utility path were also investigated. It was found that eliminate the high temperature distillate heat exchanger can lower the total cost index. The recommended network is that the hot effluent gas is heat exchanged with the anode heat exchanger, the external reformer, the air heat exchanger, the distillate heat exchanger and the reboiler, respectively. The corresponding performances of this design are 40.8%, 54.3%, 0.221 W cm -2 for overall electrical efficiency, Combine Heat and Power (CHP) efficiency and power density, respectively. The effect of operating conditions on composite curves on the design of heat exchanger network was investigated. The obtained composite curves can be divided into two groups: the threshold case and the pinch case. It was found that the pinch case which T SOFC = 1173 K yields higher total cost index than the CondBio-CathRec at the base conditions. It was also found that the pinch case can become a threshold case by adjusting split fraction or operating at

  2. Low field leakage current on ultra-thin gate oxides after ion or electron beam irradiations; Courant de fuite aux champs faibles d'oxydes ultra-minces apres irradiations avec des faisceaux d'ions et d'electrons

    Energy Technology Data Exchange (ETDEWEB)

    Ceschia, M.; Paccagnella, A.; Sandrin, S. [Universita di Padova, Dipt. di Elettronica e Informatica, Padova (Italy); Paccagnella, A. [Istituto Nazionale per la Fisica della Materia, INFM, Unita di Padova (Italy); Ghidini, G. [ST-Microelectronics, Agrate Brianza (Italy); Wyss, J. [Universita di Padova, Dipt. di Fisica, Padova (Italy)

    1999-07-01

    In contemporary CMOS 0.25-{mu}m technologies, the MOS gate oxide (thickness {approx_equal} 5 nm) shows a low-field leakage current after radiation stresses, i.e. the radiation induced leakage current (RILC). RILC is generally attributed to a trap assisted tunneling (TAT) of electrons through neutral oxide traps generated by radiation stress. RILC has been investigated on ultra-thin oxides irradiated with 158 MeV {sup 28}Si ions or 8 MeV electrons. 3 main results are worth being quoted: 1) ion or electron beam irradiation can produce RILC with similar characteristics. Even the dose dependence of RILC is similar in the 2 cases, despite the large LET difference (about a factor of 10{sup +4}), 2) RILC is not a constant as a function of time, it tends to decrease when an oxide field (few MV/cm) is applied for (tens of) thousands seconds. On the other hand, RILC stays constant in devices kept at low bias, and 3) if a pulsed gate voltage is applied during irradiation, RILC is reduced with respect to the zero-field case. (A.C.)

  3. Organic crystal light-emitting transistors with top-gate configuration

    Science.gov (United States)

    Inokuchi, Tatsuya; Inada, Yuhi; Yamao, Takeshi; Hotta, Shu

    2018-03-01

    We applied the top-gate configuration to organic light-emitting transistors (OLETs) having an organic semiconductor crystal and an aluminum-doped zinc oxide (AZO) layer. The AZO layer was inserted between a quartz substrate and the organic crystal. The devices had the top-contact configuration where gold and an alloy of magnesium and silver were used for the contacts. Silver and Parylene C® were used for a gate contact and a gate insulator for the top-gate configuration, respectively. These OLETs showed more efficient current injection at low voltages than both the devices without a gate contact and the devices having the bottom-gate configuration. The present results indicate that the top-gate configuration is effective for improving the crystal OLET characteristics.

  4. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    Science.gov (United States)

    Szyszka, A.; Lupina, L.; Lupina, G.; Schubert, M. A.; Zaumseil, P.; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-01

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y2O3 films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  5. Multifunctional logic gates based on silicon hybrid plasmonic waveguides

    Science.gov (United States)

    Cui, Luna; Yu, Li

    2018-01-01

    Nano-scale Multifunctional Logic Gates based on Si hybrid plasmonic waveguides (HPWGs) are designed by utilizing the multimode interference (MMI) effect. The proposed device is composed of three input waveguides, three output waveguides and an MMI waveguide. The functional size of the device is only 1000 nm × 3200 nm, which is much smaller than traditional Si-based all-optical logic gates. By setting different input signals and selecting suitable threshold value, OR, AND, XOR and NOT gates are achieved simultaneously or individually in a single device. This may provide a way for ultrahigh speed signal processing and future nanophotonic integrated circuits.

  6. Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode

    Science.gov (United States)

    Ali, Ghusoon M.

    2017-02-01

    An interdigitated extended gate field effect transistor (IEGFET) has been proposed as a modified pH sensor structure of an extended gate field effect transistor (EGFET). The reference electrode and the extended gate in the conventional device have been replaced by a single interdigitated extended gate. A metal-semiconductor-metal interdigitated extended gate containing two multi-finger Ni electrodes based on zinc oxide (ZnO) thin film as a pH-sensitive membrane. ZnO thin film was grown on a p-type Si (100) substrate by the sol-gel technique. The fabricated extended gate is connected to a commercial metal-oxide-semiconductor field-effect transistor device in CD4007UB. The experimental data show that this structure has real time and linear pH voltage and current sensitivities in a concentration range between pH 4 and 11. The voltage and current sensitivities are found to be about 22.4 mV/pH and 45 μA/pH, respectively. Reference electrode elimination makes the IEGFET device simple to fabricate, easy to carry out the measurements, needing a small volume of solution to test and suitable for disposable biosensor applications. Furthermore, this uncomplicated structure could be extended to fabricate multiple ions microsensors and lab-on-chip devices.

  7. A NOVEL INTEGRATED STACK APPROACH FOR REALIZING MECHANICALLY ROBUST SOLID OXIDE FUEL CELLS

    Energy Technology Data Exchange (ETDEWEB)

    Scott A. Barnett; Tammy Lai; Jiang Liu

    2001-11-01

    SOFCs are a very promising energy conversion technology for utilization of fossil fuels. The proposed project is to improve the viability of SOFCs by introducing a novel stacking geometry. The geometry involved has all active SOFC components and the interconnect deposited as thin layers on an electrically insulating support. This allows the choice of a support material that provides optimal mechanical toughness and thermal shock resistance. The supports are in the form of flattened tubes, providing relatively high strength, high packing densities, and minimizing the number of seals required. The integration of SOFCs and interconnects on the same support has several other advantages including the reduction of electrical resistances associated with pressure contacts between the cells and interconnects, relaxation of fabrication tolerances required for pressure contacts, reduction of ohmic losses, and reduction of interconnect conductivity requirements. In this report, we describe the processing methodologies that have been developed for fabricating the integrated solid oxide fuel cell (ISOFC), along with results on characterization of the component materials: support, electrolyte, anode, cathode, and interconnect. Screen printing was the primary processing method developed. A centrifugal casting technique was also developed for depositing thin 8 mol % yttrium stabilized zirconia (YSZ) electrolyte layers on porous NiO-YSZ anode substrates. Dense pinhole-free YSZ coatings were obtained by co-sintering the bi-layers at 1400 C. After depositing La{sub 0.8}Sr{sub 0.2}MnO{sub 3} (LSM)-YSZ cathodes, single SOFCs produced near-theoretical open-circuit voltages and power densities of 0.55 W/cm{sup 2} at 800 C. Initial stack operation results are also described.

  8. Verification and Synthesis of Clock-Gated Circuits

    OpenAIRE

    Dai, Yu-Yun

    2017-01-01

    As system complexity and transistor density increase, the power consumed by digital integrated circuits has become a critical constraint for VLSI design and manufacturing.To reduce dynamic power dissipation, clock-gating synthesis techniques are applied to circuits to prune register updates by modifying the next-state functions of the registers. Hence to verify this kind of synthesis, sequential equivalence checking (SEC) of clock-gated circuits is required.In this thesis, we examine the appl...

  9. Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

    Science.gov (United States)

    Wang, Jia-Zeng; Wang, Rui-Zhen

    2018-02-01

    Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

  10. An electronically controlled automatic security access gate

    Directory of Open Access Journals (Sweden)

    Jonathan A. ENOKELA

    2014-11-01

    Full Text Available The security challenges being encountered in many places require electronic means of controlling access to communities, recreational centres, offices, and homes. The electronically controlled automated security access gate being proposed in this work helps to prevent an unwanted access to controlled environments. This is achieved mainly through the use of a Radio Frequency (RF transmitter-receiver pair. In the design a microcontroller is programmed to decode a given sequence of keys that is entered on a keypad and commands a transmitter module to send out this code as signal at a given radio frequency. Upon reception of this RF signal by the receiver module, another microcontroller activates a driver circuitry to operate the gate automatically. The codes for the microcontrollers were written in C language and were debugged and compiled using the KEIL Micro vision 4 integrated development environment. The resultant Hex files were programmed into the memories of the microcontrollers with the aid of a universal programmer. Software simulation was carried out using the Proteus Virtual System Modeling (VSM version 7.7. A scaled-down prototype of the system was built and tested. The electronically controlled automated security access gate can be useful in providing security for homes, organizations, and automobile terminals. The four-character password required to operate the gate gives the system an increased level of security. Due to its standalone nature of operation the system is cheaper to maintain in comparison with a manually operated type.

  11. Noise Gating Solar Images

    Science.gov (United States)

    DeForest, Craig; Seaton, Daniel B.; Darnell, John A.

    2017-08-01

    I present and demonstrate a new, general purpose post-processing technique, "3D noise gating", that can reduce image noise by an order of magnitude or more without effective loss of spatial or temporal resolution in typical solar applications.Nearly all scientific images are, ultimately, limited by noise. Noise can be direct Poisson "shot noise" from photon counting effects, or introduced by other means such as detector read noise. Noise is typically represented as a random variable (perhaps with location- or image-dependent characteristics) that is sampled once per pixel or once per resolution element of an image sequence. Noise limits many aspects of image analysis, including photometry, spatiotemporal resolution, feature identification, morphology extraction, and background modeling and separation.Identifying and separating noise from image signal is difficult. The common practice of blurring in space and/or time works because most image "signal" is concentrated in the low Fourier components of an image, while noise is evenly distributed. Blurring in space and/or time attenuates the high spatial and temporal frequencies, reducing noise at the expense of also attenuating image detail. Noise-gating exploits the same property -- "coherence" -- that we use to identify features in images, to separate image features from noise.Processing image sequences through 3-D noise gating results in spectacular (more than 10x) improvements in signal-to-noise ratio, while not blurring bright, resolved features in either space or time. This improves most types of image analysis, including feature identification, time sequence extraction, absolute and relative photometry (including differential emission measure analysis), feature tracking, computer vision, correlation tracking, background modeling, cross-scale analysis, visual display/presentation, and image compression.I will introduce noise gating, describe the method, and show examples from several instruments (including SDO

  12. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    Directory of Open Access Journals (Sweden)

    Z N Khan

    Full Text Available Metal Oxide Semiconductor (MOS capacitors (MOSCAP have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer, time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.

  13. A quantum Fredkin gate.

    Science.gov (United States)

    Patel, Raj B; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C; Pryde, Geoff J

    2016-03-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently.

  14. Integrating nitric oxide into salicylic acid and jasmonic acid/ ethylene plant defense pathways.

    Science.gov (United States)

    Mur, Luis A J; Prats, Elena; Pierre, Sandra; Hall, Michael A; Hebelstrup, Kim H

    2013-01-01

    Plant defense against pests and pathogens is known to be conferred by either salicylic acid (SA) or jasmonic acid (JA)/ethylene (ET) pathways, depending on infection or herbivore-grazing strategy. It is well attested that SA and JA/ET pathways are mutually antagonistic allowing defense responses to be tailored to particular biotic stresses. Nitric oxide (NO) has emerged as a major signal influencing resistance mediated by both signaling pathways but no attempt has been made to integrate NO into established SA/JA/ET interactions. NO has been shown to act as an inducer or suppressor of signaling along each pathway. NO will initiate SA biosynthesis and nitrosylate key cysteines on TGA-class transcription factors to aid in the initiation of SA-dependent gene expression. Against this, S-nitrosylation of NONEXPRESSOR OF PATHOGENESIS-RELATED PROTEINS1 (NPR1) will promote the NPR1 oligomerization within the cytoplasm to reduce TGA activation. In JA biosynthesis, NO will initiate the expression of JA biosynthetic enzymes, presumably to over-come any antagonistic effects of SA on JA-mediated transcription. NO will also initiate the expression of ET biosynthetic genes but a suppressive role is also observed in the S-nitrosylation and inhibition of S-adenosylmethionine transferases which provides methyl groups for ET production. Based on these data a model for NO action is proposed but we have also highlighted the need to understand when and how inductive and suppressive steps are used.

  15. Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

    Science.gov (United States)

    Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

    2018-09-01

    In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

  16. A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

    Science.gov (United States)

    Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

    2015-05-01

    This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

  17. Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors.

    Science.gov (United States)

    Liu, Ning; Zhu, Li Qiang; Feng, Ping; Wan, Chang Jin; Liu, Yang Hui; Shi, Yi; Wan, Qing

    2015-12-11

    Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuromorphic transistors with multiple input gates are fabricated on flexible plastic substrates for pH sensor applications. When such device is operated in a quasi-static dual-gate synergic sensing mode, it shows a high pH sensitivity of ~105 mV/pH. Our results also demonstrate that single-spike dynamic mode can remarkably improve pH sensitivity and reduce response/recover time and power consumption. Moreover, we find that an appropriate negative bias applied on the sensing gate electrode can further enhance the pH sensitivity and reduce the power consumption. Our flexible neuromorphic transistors provide a new-concept sensory platform for biochemical detection with high sensitivity, rapid response and ultralow power consumption.

  18. Extrinsic gate capacitance compact model for UTBB MOSFETs

    Science.gov (United States)

    Martinez-Lopez, Andrea G.; Tinoco, Julio C.; Lezama, Gamaliel; Conde, Jorge E.; Kazemi Esfeh, Babak; Raskin, Jean-Pierre

    2018-01-01

    Ultra-thin body and buried oxide transistors have gained attention as candidates for near future CMOS technology nodes. Recent studies have pointed out that the total parasitic gate capacitance becomes an important concern for very-high frequency performance. In this paper a semi-analytical model to describe the total extrinsic gate capacitance for ultrathin silicon body and buried oxide transistors is presented. The developed model considers the main technological parameters and has been verified by finite-element numerical simulations as well as by comparison with experimental measurements. The relative weight of the main parasitic components is addressed as well as their impact over the current gain cut-off frequency. Finally, the possibility to improve the cut-off frequency by about 35% due to the reduction of the parasitic gate capacitance is highlighted.

  19. Expert Oracle GoldenGate

    CERN Document Server

    Prusinski, Ben; Chung, Richard

    2011-01-01

    Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

  20. Experimental simulation on the integration of solid oxide fuel cell and micro-turbine generation system

    Science.gov (United States)

    Lai, Wei-Hsiang; Hsiao, Chi-An; Lee, Chien-Hsiung; Chyou, Yau-Pin; Tsai, Yu-Ching

    Solid oxide fuel cell (SOFC) is characterized in high performance and high temperature exhaust, and it has potential to reach 70% efficiency if combined with gas turbine engine (GT). Because the SOFC is in developing stage, it is too expensive to obtain. This paper proposes a feasibility study by using a burner (Comb A) to simulate the high temperature exhaust gas of SOFC. The second burner (Comb B) is connected downstream of Comb A, and preheated hydrogen is injected to simulate the condition of sequential burner (SeqB). A turbocharger and a water injection system are also integrated in order to simulate the situation of a real SOFC/GT hybrid system. The water injection system is used to simulate the water mist addition at external reformer. Results show that this configuration can simulate the SOFT/GT hybrid system successfully. Water mist addition will increase the GT rotational speed, but an optimal amount exists during the variation of water injection. In residual fuel addition test, hydrogen shows good combustion efficiency and preheating temperature is the dominant parameter for hydrogen burning in SeqB even without flame holding mechanism in it. When preheating temperature is among 450-600 °C, hydrogen will have almost 100% combustion efficiency at 90% engine loading, and GT will get a higher rotational speed for the same energy input. But when the engine operates at 100% loading, the combustion efficiency will decrease while fuel utilization (U f) setting is increasing. When raising the preheated temperature to 650-700 °C, the combustion efficiency will increase rapidly.

  1. Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration.

    Science.gov (United States)

    Zhang, Jian; Qin, Ziyu; Zeng, Dawen; Xie, Changsheng

    2017-03-01

    Metal-oxide-semiconductor (MOS) based gas sensors have been considered a promising candidate for gas detection over the past few years. However, the sensing properties of MOS-based gas sensors also need to be further enhanced to satisfy the higher requirements for specific applications, such as medical diagnosis based on human breath, gas detection in harsh environments, etc. In these fields, excellent selectivity, low power consumption, a fast response/recovery rate, low humidity dependence and a low limit of detection concentration should be fulfilled simultaneously, which pose great challenges to the MOS-based gas sensors. Recently, in order to improve the sensing performances of MOS-based gas sensors, more and more researchers have carried out extensive research from theory to practice. For a similar purpose, on the basis of the whole fabrication process of gas sensors, this review gives a presentation of the important role of screening and the recent developments in high throughput screening. Subsequently, together with the sensing mechanism, the factors influencing the sensing properties of MOSs involved in material preparation processes were also discussed in detail. It was concluded that the sensing properties of MOSs not only depend on the morphological structure (particle size, morphology, pore size, etc.), but also rely on the defect structure and heterointerface structure (grain boundaries, heterointerfaces, defect concentrations, etc.). Therefore, the material-sensor integration was also introduced to maintain the structural stability in the sensor fabrication process, ensuring the sensing stability of MOS-based gas sensors. Finally, the perspectives of the MOS-based gas sensors in the aspects of fundamental research and the improvements in the sensing properties are pointed out.

  2. Efficient colorimetric pH sensor based on responsive polymer-quantum dot integrated graphene oxide.

    Science.gov (United States)

    Paek, Kwanyeol; Yang, Hyunseung; Lee, Junhyuk; Park, Junwoo; Kim, Bumjoon J

    2014-03-25

    In this paper, we report the development of a versatile platform for a highly efficient and stable graphene oxide (GO)-based optical sensor that exhibits distinctive ratiometric color responses. To demonstrate the applicability of the platform, we fabricated a colorimetric, GO-based pH sensor that responds to a wide range of pH changes. Our sensing system is based on responsive polymer and quantum dot (QD) hybrids integrated on a single GO sheet (MQD-GO), with the GO providing an excellent signal-to-noise ratio and high dispersion stability in water. The photoluminescence emissions of the blue and orange color-emitting QDs (BQDs and OQDs) in MQD-GO can be controlled independently by different pH-responsive linkers of poly(acrylic acid) (PAA) (pKa=4.5) and poly(2-vinylpyridine) (P2VP) (pKa=3.0) that can tune the efficiencies of Förster resonance energy transfer from the BQDs to the GO and from the OQDs to the GO, respectively. As a result, the color of MQD-GO changes from orange to near-white to blue over a wide range of pH values. The detailed mechanism of the pH-dependent response of the MQD-GO sensor was elucidated by measurements of time-resolved fluorescence and dynamic light scattering. Furthermore, the MQD-GO sensor showed excellent reversibility and high dispersion stability in pure water, indicating that our system is an ideal platform for biological and environmental applications. Our colorimetric GO-based optical sensor can be expanded easily to various other multifunctional, GO-based sensors by using alternate stimuli-responsive polymers.

  3. The Assessment of Oxidative Stress Intensity in Adolescents with Obesity by the Integral Index

    Directory of Open Access Journals (Sweden)

    Marina A. Darenskaya

    2018-03-01

    Full Text Available The aim of this research was to assess lipid peroxidation (LPO and antioxidative defense (AOD changes in adolescent boys with obesity using the integral index. Materials and Methods: We examined 19 adolescent boys (mean age of 4.41±0.45 years with obesity of the first degree (the study group. The control group included 23 healthy boys (mean age of 15.12±0.32 years. The study included the collection of anamnestic data, physical examination, and anthropometric data analysis (body weight (BW, height, waist circumference (WC, hip circumference (HC, and body mass index (BMI. Laboratory analysis included an assessment of the levels of total cholesterol, triglycerides, HDL, LDL, and blood glucose, as well as the intensity of LPO and AOD in blood plasma and primary and secondary products of LPO. To measure the intensity of OS, the oxidative stress index (OSi was calculated (the ratio of the LPO-AOD system indicators in the study group to average indicators in the control group. Results: We found a statistically significant increase in BW, BMI, SDS BMI, WC, and HC in the study group compared to the control group. The obese patients had higher values of blood glucose, total cholesterol, triglycerides and LDL compared to the control group. In the study group, we found a significant decrease in the concentration of diene conjugates and an increase in the level of ketodienes and conjugated trienes. The values of α-tocopherol and retinol, and SOD activity were significantly decreased in the study group compared to the control group. There were no statistically significant changes in total antioxidant activity and glutathione status components. According to the data received, the OSi level in the group of obese patients increased approximately 7 times, which confirms the results on the development of antioxidant insufficiency in this pathology.

  4. Creativity and sensory gating indexed by the P50: selective versus leaky sensory gating in divergent thinkers and creative achievers.

    Science.gov (United States)

    Zabelina, Darya L; O'Leary, Daniel; Pornpattananangkul, Narun; Nusslock, Robin; Beeman, Mark

    2015-03-01

    Creativity has previously been linked with atypical attention, but it is not clear what aspects of attention, or what types of creativity are associated. Here we investigated specific neural markers of a very early form of attention, namely sensory gating, indexed by the P50 ERP, and how it relates to two measures of creativity: divergent thinking and real-world creative achievement. Data from 84 participants revealed that divergent thinking (assessed with the Torrance Test of Creative Thinking) was associated with selective sensory gating, whereas real-world creative achievement was associated with "leaky" sensory gating, both in zero-order correlations and when controlling for academic test scores in a regression. Thus both creativity measures related to sensory gating, but in opposite directions. Additionally, divergent thinking and real-world creative achievement did not interact in predicting P50 sensory gating, suggesting that these two creativity measures orthogonally relate to P50 sensory gating. Finally, the ERP effect was specific to the P50 - neither divergent thinking nor creative achievement were related to later components, such as the N100 and P200. Overall results suggest that leaky sensory gating may help people integrate ideas that are outside of focus of attention, leading to creativity in the real world; whereas divergent thinking, measured by divergent thinking tests which emphasize numerous responses within a limited time, may require selective sensory processing more than previously thought. Copyright © 2015 Elsevier Ltd. All rights reserved.

  5. Integrated Approaches to Drug Discovery for Oxidative Stress-Related Retinal Diseases

    OpenAIRE

    Nishimura, Yuhei; Hara, Hideaki

    2016-01-01

    Excessive oxidative stress induces dysregulation of functional networks in the retina, resulting in retinal diseases such as glaucoma, age-related macular degeneration, and diabetic retinopathy. Although various therapies have been developed to reduce oxidative stress in retinal diseases, most have failed to show efficacy in clinical trials. This may be due to oversimplification of target selection for such a complex network as oxidative stress. Recent advances in high-throughput technologies...

  6. Evaluation of physical integrity of lipid bilayer under oxidative stress: application of fluorescence microscopy and digital image processing.

    Science.gov (United States)

    Liang, Ran; Zhang, Jian-Ping; Skibsted, Leif H

    2015-01-01

    Membrane damage as a result of oxidative stress is quantified using digital image heterogeneity analysis of single giant unilamellar vesicles (GUVs) composed of soy phosphatidylcholine (PC), which were found to undergo budding when containing chlorophyll a (Chla) as photosensitizer in the lipid bilayer. Based on digital image heterogeneity analysis, a dimensionless scalar parameter "entropy" for the budding process was found to change linearly during an initial budding stage. Photo-induced peroxidation of PC to form linoleoyl hydroperoxides, further leading to domains of higher polarities in GUVs, was suggested to initiate the budding process. The effect on budding process of GUVs was suggested for use in assays for evaluation of potential protectors of lipid bilayer integrity under oxidative stress, and "entropy" seemed to be a valid descriptor of such membranal integrity. The one-step procedure for quantification of prooxidative effects and antioxidative protection provided by drug candidates and potential food ingredients in membranes could be easily automated for direct measurement of oxidative and antioxidative effects on cellular integrity.

  7. Silicon photonic crystal all-optical logic gates

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Yulan [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Hu, Xiaoyong, E-mail: xiaoyonghu@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Gong, Qihuang, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

    2013-01-03

    All-optical logic gates, including OR, XOR, NOT, XNOR, and NAND gates, are realized theoretically in a two-dimensional silicon photonic crystal using the light beam interference effect. The ingenious photonic crystal waveguide component design, the precisely controlled optical path difference, and the elaborate device configuration ensure the simultaneous realization of five types of logic gate with low-power and a contrast ratio between the logic states of “1” and “0” as high as 20 dB. High power is not necessary for operation of these logic gate devices. This offers a simple and effective approach for the realization of integrated all-optical logic devices.

  8. Rapid Thermal Chemical Vapor Deposition for Dual-Gated Sub-100 nm MOSFET's

    National Research Council Canada - National Science Library

    Sturm, James

    2001-01-01

    .... The scaling of vertical p-channel MOSFET's with the source and drain doped with boron during low temperature epitaxy is limited by the diffusion of boron during subsequent side wall gate oxidation...

  9. Catalase supplementation on thawed bull spermatozoa abolishes the detrimental effect of oxidative stress on motility and DNA integrity.

    Science.gov (United States)

    Fernández-Santos, M R; Domínguez-Rebolledo, A E; Esteso, M C; Garde, J J; Martínez-Pastor, F

    2009-08-01

    The potential protective effect of catalase supplementation during in vitro culture of frozen/thawed bull spermatozoa was investigated. Frozen/thawed semen collected from three fighting bulls was diluted in phosphate buffered saline (PBS) and incubated at 37 degrees C under different experimental conditions: Control, Catalase (CAT) (200 U/mL), Oxidant (OXI) (100 microm Fe(2+)/1 mm ascorbate), and Catalase + Oxidant (CAT/OXI). We assessed sperm motility, acrosomal integrity, viability and chromatin status (SCSA) at 0, 2 and 6 h of incubation. Our results showed that catalase abolished the effect of the oxidant, protecting spermatozoa against reactive oxygen species, and improving both sperm motility and chromatin status during incubation. The OXI treatment significantly reduced the percentage of motile sperm after 6 h of incubation. The statistical model also showed that there were differences in sperm motility between CAT/OXI (20.8 +/- 2.9%) and OXI (11.6 +/- 7.6%) (p Catalase prevented DNA fragmentation even in the presence of the oxidant (%DFI: 30.3 +/- 0.8% OXI vs. 17.4 +/- 0.7% CAT/OXI). We conclude that catalase supplementation after thawing could protect bull spermatozoa against oxidative stress, and it could improve media used for processing thawed spermatozoa.

  10. Batrachotoxin uncouples gating charge immobilization from fast Na inactivation in squid giant axons

    OpenAIRE

    Tanguy, J.; Yeh, J.Z.

    1988-01-01

    The fast inactivation of sodium currents and the immobolization of sodium gating charge are thought to be closely coupled to each other. This notion was tested in the squid axon in which kinetics and steady-state properties of the gating charge movement were compared before and after removal of the Na inactivation by batrachotoxin (BTX), pronase, or chloramine-T. The immobilization of gating charge was determined by measuring the total charge movement (QON) obtained by integrating the ON gati...

  11. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

    KAUST Repository

    Smith, Casey

    2013-07-23

    Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

  12. Nanogranular SiO{sub 2} proton gated silicon layer transistor mimicking biological synapses

    Energy Technology Data Exchange (ETDEWEB)

    Liu, M. J.; Huang, G. S., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Feng, P., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Shao, F.; Wan, Q. [School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

    2016-06-20

    Silicon on insulator (SOI)-based transistors gated by nanogranular SiO{sub 2} proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

  13. Nanogranular SiO2 proton gated silicon layer transistor mimicking biological synapses

    International Nuclear Information System (INIS)

    Liu, M. J.; Huang, G. S.; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F.; Feng, P.; Shao, F.; Wan, Q.

    2016-01-01

    Silicon on insulator (SOI)-based transistors gated by nanogranular SiO 2 proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

  14. Works close to gate B

    CERN Document Server

    GS Department

    2011-01-01

    In connection to the TRAM project, drainage works will be carried out close to gate B until the end of next week. In order to avoid access problems, if arriving by car, please use gates A and E. Department of General Infrastructure Services (GS) GS-SE Group

  15. Penn State DOE GATE Program

    Energy Technology Data Exchange (ETDEWEB)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  16. Neuronal trafficking of voltage-gated potassium channels

    DEFF Research Database (Denmark)

    Jensen, Camilla S; Rasmussen, Hanne Borger; Misonou, Hiroaki

    2011-01-01

    The computational ability of CNS neurons depends critically on the specific localization of ion channels in the somatodendritic and axonal membranes. Neuronal dendrites receive synaptic inputs at numerous spines and integrate them in time and space. The integration of synaptic potentials...... is regulated by voltage-gated potassium (Kv) channels, such as Kv4.2, which are specifically localized in the dendritic membrane. The synaptic potentials eventually depolarize the membrane of the axon initial segment, thereby activating voltage-gated sodium channels to generate action potentials. Specific Kv...

  17. GATE: Improving the computational efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Staelens, S. [UGent-ELIS, St-Pietersnieuwstraat, 41, B-9000 Gent (Belgium)]. E-mail: steven.staelens@ugent.be; De Beenhouwer, J. [UGent-ELIS, St-Pietersnieuwstraat, 41, B-9000 Gent (Belgium); Kruecker, D. [Institute of Medicine-Forschungszemtrum Juelich, D-52425 Juelich (Germany); Maigne, L. [Departement de Curietherapie-Radiotherapie, Centre Jean Perrin, F-63000 Clermont-Ferrand (France); Rannou, F. [Departamento de Ingenieria Informatica, Universidad de Santiago de Chile, Santiago (Chile); Ferrer, L. [INSERM U601, CHU Nantes, F-44093 Nantes (France); D' Asseler, Y. [UGent-ELIS, St-Pietersnieuwstraat, 41, B-9000 Gent (Belgium); Buvat, I. [INSERM U678 UPMC, CHU Pitie-Salpetriere, F-75634 Paris (France); Lemahieu, I. [UGent-ELIS, St-Pietersnieuwstraat, 41, B-9000 Gent (Belgium)

    2006-12-20

    GATE is a software dedicated to Monte Carlo simulations in Single Photon Emission Computed Tomography (SPECT) and Positron Emission Tomography (PET). An important disadvantage of those simulations is the fundamental burden of computation time. This manuscript describes three different techniques in order to improve the efficiency of those simulations. Firstly, the implementation of variance reduction techniques (VRTs), more specifically the incorporation of geometrical importance sampling, is discussed. After this, the newly designed cluster version of the GATE software is described. The experiments have shown that GATE simulations scale very well on a cluster of homogeneous computers. Finally, an elaboration on the deployment of GATE on the Enabling Grids for E-Science in Europe (EGEE) grid will conclude the description of efficiency enhancement efforts. The three aforementioned methods improve the efficiency of GATE to a large extent and make realistic patient-specific overnight Monte Carlo simulations achievable.

  18. GATE: Improving the computational efficiency

    International Nuclear Information System (INIS)

    Staelens, S.; De Beenhouwer, J.; Kruecker, D.; Maigne, L.; Rannou, F.; Ferrer, L.; D'Asseler, Y.; Buvat, I.; Lemahieu, I.

    2006-01-01

    GATE is a software dedicated to Monte Carlo simulations in Single Photon Emission Computed Tomography (SPECT) and Positron Emission Tomography (PET). An important disadvantage of those simulations is the fundamental burden of computation time. This manuscript describes three different techniques in order to improve the efficiency of those simulations. Firstly, the implementation of variance reduction techniques (VRTs), more specifically the incorporation of geometrical importance sampling, is discussed. After this, the newly designed cluster version of the GATE software is described. The experiments have shown that GATE simulations scale very well on a cluster of homogeneous computers. Finally, an elaboration on the deployment of GATE on the Enabling Grids for E-Science in Europe (EGEE) grid will conclude the description of efficiency enhancement efforts. The three aforementioned methods improve the efficiency of GATE to a large extent and make realistic patient-specific overnight Monte Carlo simulations achievable

  19. Simulation of dual-gate SOI MOSFET with different dielectric layers

    Science.gov (United States)

    Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

    2016-04-01

    The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

  20. Gated equilibrium bloodpool scintigraphy

    International Nuclear Information System (INIS)

    Reinders Folmer, S.C.C.

    1981-01-01

    This thesis deals with the clinical applications of gated equilibrium bloodpool scintigraphy, performed with either a gamma camera or a portable detector system, the nuclear stethoscope. The main goal has been to define the value and limitations of noninvasive measurements of left ventricular ejection fraction as a parameter of cardiac performance in various disease states, both for diagnostic purposes as well as during follow-up after medical or surgical intervention. Secondly, it was attempted to extend the use of the equilibrium bloodpool techniques beyond the calculation of ejection fraction alone by considering the feasibility to determine ventricular volumes and by including the possibility of quantifying valvular regurgitation. In both cases, it has been tried to broaden the perspective of the observations by comparing them with results of other, invasive and non-invasive, procedures, in particular cardiac catheterization, M-mode echocardiography and myocardial perfusion scintigraphy. (Auth.)

  1. Oscillator strengths and integral cross sections for the valence-shell excitations of nitric oxide studied by fast electron impact

    Science.gov (United States)

    Xu, Xin; Xu, Long-Quan; Xiong, Tao; Chen, Tao; Liu, Ya-Wei; Zhu, Lin-Fan

    2018-01-01

    The generalized oscillator strengths for the valence-shell excitations of A2Σ+, C2Π, and D2Σ+ electronic-states of nitric oxide have been determined at an incident electron energy of 1500 eV with an energy resolution of 70 meV. The optical oscillator strengths for these transitions have been obtained by extrapolating the generalized oscillator strengths to the limit that the squared momentum transfer approaches to zero, which give an independent cross-check to the previous experimental and theoretical results. The integral cross sections for the valence-shell excitations of nitric oxide have been determined systematically from the threshold to 2500 eV with the aid of the newly developed BE-scaling method for the first time. The present optical oscillator strengths and integral cross sections of the valence-shell excitations of nitric oxide play an important role in understanding many physics and chemistry of the Earth's upper atmosphere such as the radiative cooling, ozone destruction, day glow, aurora, and so on.

  2. Quercetin protects Saccharomyces cerevisiae against oxidative stress by inducing trehalose biosynthesis and the cell wall integrity pathway.

    Directory of Open Access Journals (Sweden)

    Rita Vilaça

    Full Text Available BACKGROUND: Quercetin is a naturally occurring flavonol with antioxidant, anticancer and anti-ageing properties. In this study we aimed to identify genes differentially expressed in yeast cells treated with quercetin and its role in oxidative stress protection. METHODS: A microarray analysis was performed to characterize changes in the transcriptome and the expression of selected genes was validated by RT-qPCR. Biological processes significantly affected were identified by using the FUNSPEC software and their relevance in H(2O(2 resistance induced by quercetin was assessed. RESULTS: Genes associated with RNA metabolism and ribosome biogenesis were down regulated in cells treated with quercetin, whereas genes associated with carbohydrate metabolism, endocytosis and vacuolar proteolysis were up regulated. The induction of genes related to the metabolism of energy reserves, leading to the accumulation of the stress protectant disaccharide trehalose, and the activation of the cell wall integrity pathway play a key role in oxidative stress resistance induced by quercetin. CONCLUSIONS: These results suggest that quercetin may act as a modulator of cell signaling pathways related to carbohydrate metabolism and cell integrity to exert its protective effects against oxidative stress.

  3. Integrated Science Assessment (ISA) for Sulfur Oxides – Health Criteria (Final)

    Science.gov (United States)

    The SOx ISA reviews information on atmospheric science, exposure, dosimetry, mode of action, and health effects related to sulfur oxides and sulfur dioxide (SO2), including evidence from controlled human exposure, epidemiologic, and toxicological studies.

  4. Glutaredoxin Desensitizes Lens to Oxidative Stress by Connecting and Integrating Specific Signaling and Transcriptional Regulation for Antioxidant Response

    Directory of Open Access Journals (Sweden)

    Qi Fan

    2016-10-01

    Full Text Available Background/Aims: Oxidative stress plays a critical role in the development of cataracts, and glutaredoxins (Grxs play a major protective role against oxidative stress in the lens. This study aimed to reveal the global regulatory network of Grx1. Methods: Stable isotope labeling by amino acids in cell culture (SILAC was used in a proteome-wide quantitative approach to identify the Grx1 regulatory signaling cascades at a subcellular resolution in response to oxidative stress. Results: A total of 1,291 proteins were identified to be differentially expressed, which were further categorized into a variety of signaling cascades including redox regulation, apoptosis, cell cycle control, glucose metabolism, protein synthesis, DNA damage response, protein folding, proteasome and others. Thirteen key signaling node molecules representing each pathway were verified. Notably, the subunits of proteasome complexes, which play a pivotal role in preventing cytotoxicity via the degradation of oxidized proteins, were highly enriched by Grx1. By data-dependent network analysis, we found global functional links among these signaling pathways which elucidate how Grx1 integrates the operation of these regulatory networks in an interconnected way for H2O2-induced response. Conclusion: Our data provide a system-wide insight into the function of Grx1 and provide a basis for further mechanistic investigation of Grx1 in antioxidant responses in the lens.

  5. Compensation of gain saturation in SOA-gates by interferometric Mach-Zehnder wavelength converters

    DEFF Research Database (Denmark)

    Danielsen, Søren Lykke; Jørgensen, Carsten; Hansen, Peter Bukhave

    1996-01-01

    Compensation of signal degradation in semiconductor optical amplifier (SOA) gates for optical switch nodes using all-active integrated Mach-Zehnder interferometric wavelength converters is experimentally demonstrated at 2.5 and 10 Gb/s. More than 10 dB improvement of the dynamic range is obtained...... compared to a stand-alone SOA-gate....

  6. MoS2 based dual input logic AND gate

    Science.gov (United States)

    Martinez, Luis M.; Pinto, Nicholas J.; Naylor, Carl H.; Johnson, A. T. Charlie

    2016-12-01

    Crystalline monolayers of CVD MoS2 are used as the active semiconducting channel in a split-gate field effect transistor. The device demonstrates logic AND functionality that is controlled by independently addressing each gate terminal with ±10V. When +10V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The ON/OFF ratio of the device was ˜ 35 and the charge mobility using silicon nitride as the gate dielectric was 1.2cm2/V-s and 0.1cm2/V-s in the ON and OFF states respectively. Clear discrimination between the two states was observed when a simple circuit containing a load resistor was used to test the device logic AND functionality at 10Hz. One advantage is that split gate technology can reduce the number of devices required in complex circuits, leading to compact electronics and large scale integration based on intrinsic 2-D semiconducting materials.

  7. Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing in Aerospace Applications

    Science.gov (United States)

    VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.; Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura J.

    2009-01-01

    A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine an activation energy for the catalyst-assisted systems.

  8. Synthesis and activity evaluation of heterometallic nano oxides integrated ZSM-5 catalysts for palm oil cracking to produce biogasoline

    International Nuclear Information System (INIS)

    Ahmad, Mushtaq; Farhana, Rafida; Raman, Abdul Aziz Abdul; Bhargava, Suresh K.

    2016-01-01

    Highlights: • A 2-step process is used to synthesize nano oxides integrated ZSM-5 catalysts. • 82% yield of integrated ZSM-5 catalysts is possible at low temperature and pressure. • 59% yield of biogasoline is possible thorough catalytic cracking process. - Abstract: Biofuels produced from palm oil have shown great potential as a useful fossil fuel substitute and are environmental friendly. Utilization of palm oil as biofuel requires zeolite based catalytic technology that facilitates selective conversion of substrates to desired products, including biogasoline and biodiesel. However, the synthesis and integration of suitable zeolite based supported catalysts for the desired products are the key challenges in biofuel production. The alternative to overcome these problems is to use nano heterometallic materials supported on zeolite catalysts. In this study, Zeolite Socony Mobile-5 (ZSM-5) based catalysts loaded with heterometallic nano oxides were synthesized. Next, the catalysts used for the palm oil cracking to produce biogasoline were characterized by field emission electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX), high resolution transmission electron microscopy (HRTEM), Fourier transform infrared spectroscopy (FTIR) and Brunauer, Emmett and Teller (BET) analysis. Taguchi method was used to assess and optimize the catalytic cracking process. The catalytic cracking results illustrated that under optimized conditions, ZSM-5 (30), Fe–Zn–Cu–ZSM-5 (31), Fe–Zn–Cu–ZSM-5 (32) and Fe–Zn–ZSM-5 (33) yielded 14%, 59%, 49% and 56% biogasoline, respectively. Higher efficiency of Fe–Zn–Cu–ZSM-5 (31) might be attributed to higher content of loaded metal oxides as compared to the other synthesized catalysts. The yield of biogasoline in this study, catalyzed by Fe–Zn–Cu–ZSM-5 (31), was 8% more than the literature values. Therefore, the present study proved that the newly developed Fe–Zn–Cu–ZSM-5 (31) was an efficient

  9. Proposed modifications to Hiwassee Dam radial gates to accommodate concrete growth on piers

    Energy Technology Data Exchange (ETDEWEB)

    Sehgal, C.K.; Mikolajczyk, B.K. [Harza Engineering Company, Chicago, IL (United States); Waddell, A.M. [Tennessee Valley Authority, Hydro Engineering, Chattanooga, TN (United States)

    1995-12-31

    The radial type spillway gates at Tennessee Valley Authority`s Hiwassee Dam have a history of binding problems caused by growth of the concrete piers and non overflow sections. The concrete growth has resulted in distortion of the embedded side seal channels. The two end piers have been subjected to the largest amount of concrete growth, reducing the width of the two end gate bays permanently by about 3 to 4 inches total. The sides of the gates have had to be shaved several times so that the gates could be operated without binding. Further shaving is not possible without compromising the structural integrity of the gates. The proposed modification described in this paper would eliminate the need for further shaving and would accommodate several inches of future growth. The proposed modification could also serve as a guide for future design of radial gates where concrete growth problem is expected.

  10. Reliability assessment of germanium gate stacks with promising initial characteristics

    Science.gov (United States)

    Lu, Cimang; Lee, Choong Hyun; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2015-02-01

    This work reports on the reliability assessment of germanium (Ge) gate stacks with promising initial electrical properties, with focus on trap generation under a constant electric stress field (Estress). Initial Ge gate stack properties do not necessarily mean highly robust reliability when it is considered that traps are newly generated under high Estress. A small amount of yttrium- or scandium oxide-doped GeO2 (Y-GeO2 or Sc-GeO2, respectively) significantly reduces trap generation in Ge gate stacks without deterioration of the interface. This is explained by the increase in the average coordination number (Nav) of the modified GeO2 network that results from the doping.

  11. Thermodynamic Analysis of an Integrated Solid Oxide Fuel Cell Cycle with a Rankine Cycle

    DEFF Research Database (Denmark)

    Rokni, Masoud

    2010-01-01

    Hybrid systems consisting of Solid Oxide Fuel Cells (SOFC) on the top of a Steam Turbine (ST) are investigated. The plants are fired by natural gas (NG). A desulfurization reactor removes the sulfur content in the fuel while a pre-reformer breaks down the heavier hydrocarbons. The pre-treated fue......% are achieved which is considerably higher than the conventional Combined Cycles (CC). Both ASR (Adiabatic Steam Reformer) and CPO (Catalytic Partial Oxidation) fuel pre-reformer reactors are considered in this investigation.......Hybrid systems consisting of Solid Oxide Fuel Cells (SOFC) on the top of a Steam Turbine (ST) are investigated. The plants are fired by natural gas (NG). A desulfurization reactor removes the sulfur content in the fuel while a pre-reformer breaks down the heavier hydrocarbons. The pre-treated fuel...

  12. Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications

    International Nuclear Information System (INIS)

    Yoon, Young Jun; Kang, Hee Sung; Seo, Jae Hwa; Kim, Young Jo; Bae, Jin Hyuk; Lee, Jung Hee; Kang, In Man; Cho, Eou Sik; Cho, Seong Jae

    2014-01-01

    We have investigated gallium-nitride (GaN)-based metal-oxide-semiconductor field-effect transistors(MOSFETs) having a recessed-gate structure for high-power applications. Recessed-gate GaN-based MOSFETs have been designed with a dual high-k dielectric structure to overcome low current drivability. Compared to recessed-gate GaN-based MOSFETs having a single gate dielectric with the same oxide thickness, recessed-gate GaN-based MOSFETs having a dual high-k dielectric composed of Al 2 O 3 and HfO 2 have achieved a high drain current (I D ) and transconductance (g m ) due to the high dielectric constant of HfO 2 . Also, because the dual high-k dielectric forms a high electron density in the channel layer with outstanding gate control capability, low channel resistances (R ch ) have obtained. In addition, we have studied the effect of the length between the gate and the drain (L gd ) on the on-resistance (R on ) to minimize the R on that is associated with power consumption and switching performance. Also, the electric field distribution of a device having a dual high-k dielectric has been examined with a field plate structure for high drive voltage. The proposed device was confirmed to be a remarkable candidate for switching devices in high-power applications.

  13. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    International Nuclear Information System (INIS)

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  14. 49 CFR 234.223 - Gate arm.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm. 234.223 Section 234.223 Transportation... Maintenance Standards § 234.223 Gate arm. Each gate arm, when in the downward position, shall extend across... clearly viewed by approaching highway users. Each gate arm shall start its downward motion not less than...

  15. Demonstration of a Quantum Nondemolition Sum Gate

    DEFF Research Database (Denmark)

    Yoshikawa, J.; Miwa, Y.; Huck, Alexander

    2008-01-01

    The sum gate is the canonical two-mode gate for universal quantum computation based on continuous quantum variables. It represents the natural analogue to a qubit C-NOT gate. In addition, the continuous-variable gate describes a quantum nondemolition (QND) interaction between the quadrature...

  16. Reversible logic gates on Physarum Polycephalum

    International Nuclear Information System (INIS)

    Schumann, Andrew

    2015-01-01

    In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum

  17. Gating System Design for Casting thin Aluminium Alloy (Al-Si Plates

    Directory of Open Access Journals (Sweden)

    Victor ANJO

    2013-11-01

    Full Text Available The main problems caused by improper gating are entrained aluminium oxide films, cuts and washes, low casting yield and entrapped gas. This study describes the design of a gating system to produce thin Aluminium cast alloy plates of different sizes and thicknesses of 4mm, 6mm, 8mm, and 10mm using the non-pressurized gating with ratio of 1:4:4 and green sand moulding technique. The gating design was based on the laws of fluid mechanics and empirical rules of gating for non ferrous metals. The equipments used for this experiment includes; a coal fired crucible furnace and an X-Ray machine. Materials used include; silica sand, clay, wood, glue and Aluminium alloy scraps. The experimental procedure involved: the gating design calculations, construction of wooden pattern and gating; using the wooden pattern and gating to produce the mould cavities and gating; melting, melt treatment and pouring of melt in the sand mould to produce the casting. The plate castings after removal from mould were visually examined for surface defects and after fettling and cleaning X-Ray radiography was used to find the internal soundness of the castings. From the results obtained in the experiment, it was found that there were no internal defects and quality castings were produced.

  18. Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

    Science.gov (United States)

    Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

    2018-04-01

    We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

  19. Gated communities in South Africa: Tensions between the planning ...

    African Journals Online (AJOL)

    Gated communities are considered by many South Africans as a necessity – a place to stay in a safer environment in the context of high crime rates. At the same time, these developments can also challenge planning and development goals towards greater integration and accessibility. This article considers the views of ...

  20. Monolithic metal oxide transistors.

    Science.gov (United States)

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics.

  1. Integrated iron(II) oxidation and limestone neutralisation of acid mine water

    CSIR Research Space (South Africa)

    Maree, JP

    1999-01-01

    Full Text Available Volumetric iron (II) oxidation rates exceeding 100 g/(l.d) were achieved by dosing powdered limestone to a bio-reactor treating artificial acid mine water. Neutralisation and partial sulphate removal were achieved as well. The rate is highly...

  2. Integrated Science Assessment (ISA) for Sulfur Oxides – Health Criteria (Second External Review Draft, Dec 2016)

    Science.gov (United States)

    This draft document provides EPA’s evaluation and synthesis of the most policy-relevant science related to the health effects of sulfur oxides. When final, it will provide a critical part of the scientific foundation for EPA’s decision regarding the adequacy of the current primar...

  3. Integrated Science Assessment (ISA) for Oxides of Nitrogen – Health Criteria (Final Report, 2016)

    Science.gov (United States)

    This final report provides the U.S. EPA’s evaluation and synthesis of the most policy-relevant science related to the health effects of gaseous oxides of nitrogen. It provides a critical part of the scientific foundation for the U.S. EPA’s decision regarding the adequacy of the c...

  4. Integrated Science Assessment (ISA) for Oxides of Nitrogen – Health Criteria (Second External Review Draft, 2015)

    Science.gov (United States)

    This draft document provides EPA’s evaluation and synthesis of the most policy-relevant science related to the health effects of oxides of nitrogen. When final, it will provide a critical part of the scientific foundation for EPA’s decision regarding the adequacy of the current ...

  5. Biomass-powered Solid Oxide Fuel Cells : Experimental and Modeling Studies for System Integrations

    NARCIS (Netherlands)

    Liu, M.

    2013-01-01

    Biomass is a sustainable energy source which, through thermo-chemical processes of biomass gasification, is able to be converted from a solid biomass fuel into a gas mixture, known as syngas or biosyngas. A solid oxide fuel cell (SOFC) is a power generation device that directly converts the chemical

  6. Integrity of 111In-radiolabeled superparamagnetic iron oxide nanoparticles in the mouse

    International Nuclear Information System (INIS)

    Wang, Haotian; Kumar, Rajiv; Nagesha, Dattatri; Duclos, Richard I.; Sridhar, Srinivas; Gatley, Samuel J.

    2015-01-01

    Introduction: Iron-oxide nanoparticles can act as contrast agents in magnetic resonance imaging (MRI), while radiolabeling the same platform with nuclear medicine isotopes allows imaging with positron emission tomography (PET) or single-photon emission computed tomography (SPECT), modalities that offer better quantification. For successful translation of these multifunctional imaging platforms to clinical use, it is imperative to evaluate the degree to which the association between radioactive label and iron oxide core remains intact in vivo. Methods: We prepared iron oxide nanoparticles stabilized by oleic acid and phospholipids which were further radiolabeled with 59 Fe, 14 C-oleic acid, and 111 In. Results: Mouse biodistributions showed 111 In preferentially localized in reticuloendothelial organs, liver, spleen and bone. However, there were greater levels of 59 Fe than 111 In in liver and spleen, but lower levels of 14 C. Conclusions: While there is some degree of dissociation between the 111 In labeled component of the nanoparticle and the iron oxide core, there is extensive dissociation of the oleic acid component

  7. Bill Gates vil redde Folkeskolen

    DEFF Research Database (Denmark)

    Fejerskov, Adam Moe

    2014-01-01

    Det amerikanske uddannelsessystem bliver for tiden udsat for hård kritik, ledt an af Microsoft stifteren Bill Gates. Gates har indtil videre brugt 3 mia. kroner på at skabe opbakning til tiltag som præstationslønning af lærere og strømlining af pensum på tværs af alle skoler i landet...

  8. Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Po-Yung [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Tsai, Ming-Yen; Chen, Bo-Wei; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Chou, Cheng-Hsu; Chang, Jung-Fang [Product Technology Center, Chimei Innolux Corp., Tainan 741, Taiwan (China)

    2016-03-31

    The degree of degradation between the amorphous-indium–gallium–zinc oxide (a-IGZO) thin film transistor (TFT) using the top-gate only or bottom-gate only is compared. Under negative gate bias illumination stress (NBIS), the threshold voltage (V{sub T}) after bottom-gate NBIS monotonically shifts in the negative direction, whereas top-gate NBIS operation exhibits on-state current increases without V{sub T} shift. Such anomalous degradation behavior of NBIS under top-gate operation is due to hole-trapping in the etch stop layer above the central portion of the channel. These phenomena can be ascribed to the screening of the electric field by redundant source/drain electrodes. In addition, the device degradation of dual gate a-IGZO TFT stressed with different top gate pulse waveforms is investigated. It is observed that the degradation is dependent on the frequency of the top gate pulses. The V{sub T} shift increases with decreasing frequency, indicating the hole mobility of IGZO is low. - Highlights: • Static and dynamic gate bias stresses are imposed on dual gate InGaZnO TFTs. • Top-gate NBIS operation exhibits on-state current increases without VT shift. • The degradation behavior of top-gate NBIS is due to hole-trapping in the ESL. • The degradation is dependent on the frequency of the top gate pulses. • The V{sub T} shift increases with decreasing frequency of the top gate pulses.

  9. The thinnest molecular separation sheet by graphene gates of single-walled carbon nanohorns.

    Science.gov (United States)

    Ohba, Tomonori

    2014-11-25

    Graphene is possibly the thinnest membrane that could be used as a molecular separation gate. Several techniques including absorption, cryogenic distillation, adsorption, and membrane separation have been adopted for constructing separation systems. Molecular separation using graphene as the membrane has been studied because large area synthesis of graphene is possible by chemical vapor deposition. Control of the gate sizes is necessary to achieve high separation performances in graphene membranes. The separation of molecules and ions using graphene and graphene oxide layers could be achieved by the intrinsic defects and defect donation of graphene. However, the controllability of the graphene gates is still under debate because gate size control at the picometer level is inevitable for the fabrication of the thinnest graphene membranes. In this paper, the controlled gate size in the graphene sheets in single-walled carbon nanohorns (NHs) is studied and the molecular separation ability of the graphene sheets is assessed by molecular probing with CO2, O2, N2, CH4, and SF6. Graphene sheets in NHs with different sized gates of 310, 370, and >500 pm were prepared and assessed by molecular probing. The 310 pm-gates in the graphene sheets could separate the molecules tested, whereas weak separation properties were observed for 370 pm-gates. The amount of CO2 that penetrated the 310 pm-gates was more than 35 times larger than that of CH4. These results were supported by molecular dynamics simulations of the penetration of molecules through 300, 400, and 700 pm-gates in graphene sheets. Therefore, a gas separation membrane using a 340-pm-thick graphene sheet has high potential. These findings provide unambiguous evidence of the importance of graphene gates on the picometer level. Control of the gates is the primary challenge for high-performance separation membranes made of graphene.

  10. Integration

    DEFF Research Database (Denmark)

    Emerek, Ruth

    2004-01-01

    Bidraget diskuterer de forskellige intergrationsopfattelse i Danmark - og hvad der kan forstås ved vellykket integration......Bidraget diskuterer de forskellige intergrationsopfattelse i Danmark - og hvad der kan forstås ved vellykket integration...

  11. Integration of atomic layer deposition CeO{sub 2} thin films with functional complex oxides and 3D patterns

    Energy Technology Data Exchange (ETDEWEB)

    Coll, M., E-mail: mcoll@icmab.es; Palau, A.; Gonzalez-Rosillo, J.C.; Gazquez, J.; Obradors, X.; Puig, T.

    2014-02-28

    We present a low-temperature, < 300 °C, ex-situ integration of atomic layer deposition (ALD) ultrathin CeO{sub 2} layers (3 to 5 unit cells) with chemical solution deposited La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) functional complex oxides for multilayer growth without jeopardizing the morphology, microstructure and physical properties of the functional oxide layer. We have also extended this procedure to pulsed laser deposited YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) thin films. Scanning force microscopy, X-ray diffraction, aberration corrected scanning transmission electron microscopy and macroscopic magnetic measurements were used to evaluate the quality of the perovskite films before and after the ALD process. By means of microcontact printing and ALD we have prepared CeO{sub 2} patterns using an ozone-robust photoresist that will avoid the use of hazardous lithography processes directly on the device components. These bilayers, CeO{sub 2}/LSMO and CeO{sub 2}/YBCO, are foreseen to have special interest for resistive switching phenomena in resistive random-access memory. - Highlights: • Integration of atomic layer deposition (ALD) CeO{sub 2} layers on functional complex oxides • Resistive switching is identified in CeO{sub 2}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and CeO{sub 2}/YBa{sub 2}Cu{sub 3}O{sub 7} bilayers. • Study of the robustness of organic polymers for area-selective ALD • Combination of ALD and micro-contact printing to obtain 3D patterns of CeO{sub 2}.

  12. Integration of atomic layer deposition CeO2 thin films with functional complex oxides and 3D patterns

    International Nuclear Information System (INIS)

    Coll, M.; Palau, A.; Gonzalez-Rosillo, J.C.; Gazquez, J.; Obradors, X.; Puig, T.

    2014-01-01

    We present a low-temperature, < 300 °C, ex-situ integration of atomic layer deposition (ALD) ultrathin CeO 2 layers (3 to 5 unit cells) with chemical solution deposited La 0.7 Sr 0.3 MnO 3 (LSMO) functional complex oxides for multilayer growth without jeopardizing the morphology, microstructure and physical properties of the functional oxide layer. We have also extended this procedure to pulsed laser deposited YBa 2 Cu 3 O 7 (YBCO) thin films. Scanning force microscopy, X-ray diffraction, aberration corrected scanning transmission electron microscopy and macroscopic magnetic measurements were used to evaluate the quality of the perovskite films before and after the ALD process. By means of microcontact printing and ALD we have prepared CeO 2 patterns using an ozone-robust photoresist that will avoid the use of hazardous lithography processes directly on the device components. These bilayers, CeO 2 /LSMO and CeO 2 /YBCO, are foreseen to have special interest for resistive switching phenomena in resistive random-access memory. - Highlights: • Integration of atomic layer deposition (ALD) CeO 2 layers on functional complex oxides • Resistive switching is identified in CeO 2 /La 0.7 Sr 0.3 MnO 3 and CeO 2 /YBa 2 Cu 3 O 7 bilayers. • Study of the robustness of organic polymers for area-selective ALD • Combination of ALD and micro-contact printing to obtain 3D patterns of CeO 2

  13. IceBridge Flux Gate Magnetometer L0 Raw Magnetic Field

    Data.gov (United States)

    National Aeronautics and Space Administration — The NASA IceBridge Flux Gate Magnetometer L0 Raw Magnetic Field (IMFGM0) data set contains magnetic field readings taken over Antarctica using the Integrity...

  14. IceBridge Flux Gate Magnetometer L0 Raw Magnetic Field, Version 1

    Data.gov (United States)

    National Aeronautics and Space Administration — The NASA IceBridge Flux Gate Magnetometer L0 Raw Magnetic Field (IMFGM0) data set contains magnetic field readings taken over Antarctica using the Integrity...

  15. Experimental investigation of a shielded complementary Metal-Oxide Semiconductor (MOS) structure

    Science.gov (United States)

    Lin, H. C.; Halsor, J. L.

    1974-01-01

    A shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area.

  16. Thermodynamic analysis of an integrated solid oxide fuel cell cycle with a rankine cycle

    International Nuclear Information System (INIS)

    Rokni, Masoud

    2010-01-01

    Hybrid systems consisting of solid oxide fuel cells (SOFC) on the top of a steam turbine (ST) are investigated. The plants are fired by natural gas (NG). A desulfurization reactor removes the sulfur content in the fuel while a pre-reformer breaks down the heavier hydro-carbons. The pre-treated fuel enters then into the anode side of the SOFC. The remaining fuels after the SOFC stacks enter a burner for further burning. The off-gases are then used to produce steam for a Rankine cycle in a heat recovery steam generator (HRSG). Different system setups are suggested. Cyclic efficiencies up to 67% are achieved which is considerably higher than the conventional combined cycles (CC). Both adiabatic steam reformer (ASR) and catalytic partial oxidation (CPO) fuel pre-reformer reactors are considered in this investigation.

  17. Integrated bio-oxidation and adsorptive filtration reactor for removal of arsenic from wastewater.

    Science.gov (United States)

    Kamde, Kalyani; Dahake, Rashmi; Pandey, R A; Bansiwal, Amit

    2018-01-08

    Recently, removal of arsenic from different industrial effluent discharged using simple, efficient and low-cost technique has been widely considered. In this study, removal of arsenic (As) from real wastewater has been studied employing modified bio-oxidation followed by adsorptive filtration method in a novel continuous flow through the reactor. This method includes biological oxidation of ferrous to ferric ions by immobilized Acidothiobacillus ferrooxidans bacteria on granulated activated carbon (GAC) in fixed bed bio-column reactor with the adsorptive filtration unit. Removal efficiency was optimized regarding the initial flow rate of media and ferrous ions concentration. Synthetic wastewater sample having different heavy metal ions such as Arsenic (As), Cobalt (Co), Chromium (Cr), Copper (Cu), Iron (Fe), Lead (Pb) and Manganese (Mn) were also used in the study. The structural and surface changes occurring after the treatment process were scrutinized using FT-IR and Scanning Electron Microscopy (SEM) analysis. The finding showed that not only arsenic can be removed considerably in the bioreactor system, but also removing efficiency was much more (metals in real wastewater sample. The results from TCPL test confirms that solid spent media was non-hazardous and can be safely disposed of. This study verified that combination of bio-oxidation with adsorptive filtration method improves the removal efficiency of arsenic and other heavy metal ions in wastewater sample.

  18. A humanin analog decreases oxidative stress and preserves mitochondrial integrity in cardiac myoblasts.

    Science.gov (United States)

    Klein, Laura E; Cui, Lingguang; Gong, Zhenwei; Su, Kai; Muzumdar, Radhika

    2013-10-18

    A potent analog (HNG) of the endogenous peptide humanin protects against myocardial ischemia-reperfusion (MI-R) injury in vivo, decreasing infarct size and improving cardiac function. Since oxidative stress contributes to the damage from MI-R we tested the hypotheses that: (1) HNG offers cardioprotection through activation of antioxidant defense mechanisms leading to preservation of mitochondrial structure and that, (2) the activity of either of a pair of non-receptor tyrosine kinases, c-Abl and Arg is required for this protection. Rat cardiac myoblasts (H9C2 cells) were exposed to nanomolar concentrations of HNG and to hydrogen peroxide (H2O2). Cells treated with HNG in the presence of H2O2 demonstrated reduced intracellular reactive oxygen species (ROS), preserved mitochondrial membrane potential, ATP levels and mitochondrial structure. HNG induced activation of catalase and glutathione peroxidase (GPx) within 5 min and decreased the ratio of oxidized to reduced glutathione within 30 min. siRNA knockdown of both Abl and Arg, but neither alone, abolished the HNG-mediated reduction of ROS in myoblasts exposed to H2O2. These findings demonstrate an HNG-mediated, Abl- and Arg-dependent, rapid and sustained activation of critical cellular defense systems and attenuation of oxidative stress, providing mechanistic insights into the observed HNG-mediated cardioprotection in vivo. Copyright © 2013 Elsevier Inc. All rights reserved.

  19. Gas-phase advanced oxidation as an integrated air pollution control technique

    Directory of Open Access Journals (Sweden)

    Getachew A. Adnew

    2016-03-01

    Full Text Available Gas-phase advanced oxidation (GPAO is an emerging air cleaning technology based on the natural self-cleaning processes that occur in the Earth’s atmosphere. The technology uses ozone, UV-C lamps and water vapor to generate gas-phase hydroxyl radicals that initiate oxidation of a wide range of pollutants. In this study four types of GPAO systems are presented: a laboratory scale prototype, a shipping container prototype, a modular prototype, and commercial scale GPAO installations. The GPAO systems treat volatile organic compounds, reduced sulfur compounds, amines, ozone, nitrogen oxides, particles and odor. While the method covers a wide range of pollutants, effective treatment becomes difficult when temperature is outside the range of 0 to 80 °C, for anoxic gas streams and for pollution loads exceeding ca. 1000 ppm. Air residence time in the system and the rate of reaction of a given pollutant with hydroxyl radicals determine the removal efficiency of GPAO. For gas phase compounds and odors including VOCs (e.g. C6H6 and C3H8 and reduced sulfur compounds (e.g. H2S and CH3SH, removal efficiencies exceed 80%. The method is energy efficient relative to many established technologies and is applicable to pollutants emitted from diverse sources including food processing, foundries, water treatment, biofuel generation, and petrochemical industries.

  20. Integration of Traditional and Metabolomics Biomarkers Identifies Prognostic Metabolites for Predicting Responsiveness to Nutritional Intervention against Oxidative Stress and Inflammation

    Directory of Open Access Journals (Sweden)

    You Jin Kim

    2017-03-01

    Full Text Available Various statistical approaches can be applied to integrate traditional and omics biomarkers, allowing the discovery of prognostic markers to classify subjects into poor and good prognosis groups in terms of responses to nutritional interventions. Here, we performed a prototype study to identify metabolites that predict responses to an intervention against oxidative stress and inflammation, using a data set from a randomized controlled trial evaluating Korean black raspberry (KBR in sedentary overweight/obese subjects. First, a linear mixed-effects model analysis with multiple testing correction showed that four-week consumption of KBR significantly changed oxidized glutathione (GSSG, q = 0.027 level, the ratio of reduced glutathione (GSH to GSSG (q = 0.039 in erythrocytes, malondialdehyde (MDA, q = 0.006 and interleukin-6 (q = 0.006 levels in plasma, and seventeen NMR metabolites in urine compared with those in the placebo group. A subsequent generalized linear mixed model analysis showed linear correlations between baseline urinary glycine and N-phenylacetylglycine (PAG and changes in the GSH:GSSG ratio (p = 0.008 and 0.004 as well as between baseline urinary adenine and changes in MDA (p = 0.018. Then, receiver operating characteristic analysis revealed that a two-metabolite set (glycine and PAG had the strongest prognostic relevance for future interventions against oxidative stress (the area under the curve (AUC = 0.778. Leave-one-out cross-validation confirmed the accuracy of prediction (AUC = 0.683. The current findings suggest that a higher level of this two-metabolite set at baseline is useful for predicting responders to dietary interventions in subjects with oxidative stress and inflammation, contributing to the emergence of personalized nutrition.

  1. Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

    Directory of Open Access Journals (Sweden)

    Z. N. Khan

    2016-01-01

    Full Text Available Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO based metal-oxide capacitors (MOSCAP with carefully chosen Atomic Layer Deposition (ALD process parameters. Gate element of the device has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability of ultrathin TiN on gate electrodes is established through current density versus voltage (J-V, resistance versus temperature (R-T, and permittivity versus temperature analysis. A higher process window starting from 600°C was intentionally chosen to understand the energy efficient behavior expected from ultrathin gate metallization and its unique physical state with shrinking thickness. The device characteristics in form of effective electronic mobility as a function of inverse charge density were also found better than those conventional gate stacks used for EOT scaling.

  2. Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

    Science.gov (United States)

    Lien, Yu-Chung; Shieh, Jia-Min; Huang, Wen-Hsien; Tu, Cheng-Hui; Wang, Chieh; Shen, Chang-Hong; Dai, Bau-Tong; Pan, Ci-Ling; Hu, Chenming; Yang, Fu-Liang

    2012-04-01

    The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 μs under low operating voltages of ± 7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.

  3. A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors

    Science.gov (United States)

    Seoane, N.; Martinez, A.

    2013-09-01

    In this paper we present a 3D quantum transport simulation study of source-to-drain tunnelling in gate-all-around Si nanowire transistors by using the non-equilibrium Green's function approach. The impact of the channel length, device cross-section, and drain and gate applied biases on the source-to-drain tunnelling is examined in detail. The overall effect of tunnelling on the ID-VG characteristics is also investigated. Tunnelling in devices with channel lengths of 10 nm or less substantially enhances the off-current. This enhancement is more important at high drain biases and at larger cross-sections where the sub-threshold slope is substantially degraded. A less common effect is the increase in the on-current due to the tunnelling which contributes as much as 30% of the total on-current. This effect is almost independent of the cross-section, and it depends weakly on the studied channel lengths.

  4. Monte Carlo simulation of tomography techniques using the platform Gate

    International Nuclear Information System (INIS)

    Barbouchi, Asma

    2007-01-01

    Simulations play a key role in functional imaging, with applications ranging from scanner design, scatter correction, protocol optimisation. GATE (Geant4 for Application Tomography Emission) is a platform for Monte Carlo Simulation. It is based on Geant4 to generate and track particles, to model geometry and physics process. Explicit modelling of time includes detector motion, time of flight, tracer kinetics. Interfaces to voxellised models and image reconstruction packages improve the integration of GATE in the global modelling cycle. In this work Monte Carlo simulations are used to understand and optimise the gamma camera's performances. We study the effect of the distance between source and collimator, the diameter of the holes and the thick of the collimator on the spatial resolution, energy resolution and efficiency of the gamma camera. We also study the reduction of simulation's time and implement a model of left ventricle in GATE. (Author). 7 refs

  5. A solid dielectric gated graphene nanosensor in electrolyte solutions.

    Science.gov (United States)

    Zhu, Yibo; Wang, Cheng; Petrone, Nicholas; Yu, Jaeeun; Nuckolls, Colin; Hone, James; Lin, Qiao

    2015-03-23

    This letter presents a graphene field effect transistor (GFET) nanosensor that, with a solid gate provided by a high- κ dielectric, allows analyte detection in liquid media at low gate voltages. The gate is embedded within the sensor and thus is isolated from a sample solution, offering a high level of integration and miniaturization and eliminating errors caused by the liquid disturbance, desirable for both in vitro and in vivo applications. We demonstrate that the GFET nanosensor can be used to measure pH changes in a range of 5.3-9.3. Based on the experimental observations and quantitative analysis, the charging of an electrical double layer capacitor is found to be the major mechanism of pH sensing.

  6. Integrated Science Assessment (ISA) for Sulfur Oxides – Health Criteria (External Review Draft, Nov 2015)

    Science.gov (United States)

    EPA announced the availability of the external review draft of the Integrated Science Assessment for Sulfur Oxides– Health Criteria for public comment and independent peer review in a November 24, 2015 Federal Register Notice. This draft document provides EPA’s evaluati...

  7. AMPK controls exercise endurance, mitochondrial oxidative capacity, and skeletal muscle integrity

    DEFF Research Database (Denmark)

    Lantier, Louise; Fentz, Joachim; Mounier, Rémi

    2014-01-01

    AMP-activated protein kinase (AMPK) is a sensor of cellular energy status that plays a central role in skeletal muscle metabolism. We used skeletal muscle-specific AMPKα1α2 double-knockout (mdKO) mice to provide direct genetic evidence of the physiological importance of AMPK in regulating muscle ...... integrity....

  8. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices.

    Science.gov (United States)

    Black, Jennifer M; Come, Jeremy; Bi, Sheng; Zhu, Mengyang; Zhao, Wei; Wong, Anthony T; Noh, Joo Hyon; Pudasaini, Pushpa R; Zhang, Pengfei; Okatan, Mahmut Baris; Dai, Sheng; Kalinin, Sergei V; Rack, Philip D; Ward, Thomas Zac; Feng, Guang; Balke, Nina

    2017-11-22

    Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

  9. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    Science.gov (United States)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  10. Sensory gating in primary insomnia.

    Science.gov (United States)

    Hairston, Ilana S; Talbot, Lisa S; Eidelman, Polina; Gruber, June; Harvey, Allison G

    2010-06-01

    Although previous research indicates that sleep architecture is largely intact in primary insomnia (PI), the spectral content of the sleeping electroencephalographic trace and measures of brain metabolism suggest that individuals with PI are physiologically more aroused than good sleepers. Such observations imply that individuals with PI may not experience the full deactivation of sensory and cognitive processing, resulting in reduced filtering of external sensory information during sleep. To test this hypothesis, gating of sensory information during sleep was tested in participants with primary insomnia (n = 18) and good sleepers (n = 20). Sensory gating was operationally defined as (i) the difference in magnitude of evoked response potentials elicited by pairs of clicks presented during Wake and Stage II sleep, and (ii) the number of K complexes evoked by the same auditory stimulus. During wake the groups did not differ in magnitude of sensory gating. During sleep, sensory gating of the N350 component was attenuated and completely diminished in participants with insomnia. P450, which occurred only during sleep, was strongly gated in good sleepers, and less so in participants with insomnia. Additionally, participants with insomnia showed no stimulus-related increase in K complexes. Thus, PI is potentially associated with impaired capacity to filter out external sensory information, especially during sleep. The potential of using stimulus-evoked K complexes as a biomarker for primary insomnia is discussed.

  11. Switching terahertz waves with gate-controlled active graphene metamaterials.

    Science.gov (United States)

    Lee, Seung Hoon; Choi, Muhan; Kim, Teun-Teun; Lee, Seungwoo; Liu, Ming; Yin, Xiaobo; Choi, Hong Kyw; Lee, Seung S; Choi, Choon-Gi; Choi, Sung-Yool; Zhang, Xiang; Min, Bumki

    2012-11-01

    The extraordinary electronic properties of graphene provided the main thrusts for the rapid advance of graphene electronics. In photonics, the gate-controllable electronic properties of graphene provide a route to efficiently manipulate the interaction of photons with graphene, which has recently sparked keen interest in graphene plasmonics. However, the electro-optic tuning capability of unpatterned graphene alone is still not strong enough for practical optoelectronic applications owing to its non-resonant Drude-like behaviour. Here, we demonstrate that substantial gate-induced persistent switching and linear modulation of terahertz waves can be achieved in a two-dimensional metamaterial, into which an atomically thin, gated two-dimensional graphene layer is integrated. The gate-controllable light-matter interaction in the graphene layer can be greatly enhanced by the strong resonances of the metamaterial. Although the thickness of the embedded single-layer graphene is more than six orders of magnitude smaller than the wavelength (wave by up to 47% and its phase by 32.2° at room temperature. More interestingly, the gate-controlled active graphene metamaterials show hysteretic behaviour in the transmission of terahertz waves, which is indicative of persistent photonic memory effects.

  12. Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

    Science.gov (United States)

    Samanta, Piyas

    2017-10-01

    The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler–Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide–semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

  13. Ionizing radiation effects on floating gates

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Visconti, A.; Bonanomi, M.

    2004-01-01

    Floating gate (FG) memories, and in particular Flash, are the dominant among modern nonvolatile memory technologies. Their performance under ionizing radiation was traditionally studied for the use in space, but has become of general interest in recent years. We are showing results on the charge loss from programmed FG arrays after 10 keV x-rays exposure. Exposure to ionizing radiation results in progressive discharge of the FG. More advanced devices, featuring smaller FG, are less sensitive to ionizing radiation that older ones. The reason is identified in the photoemission of electrons from FG, since at high doses it dominates over charge loss deriving from electron/hole pairs generation in the oxides

  14. New opening hours of the gates

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  15. A real-time respiration position based passive breath gating equipment for gated radiotherapy: a preclinical evaluation.

    Science.gov (United States)

    Hu, Weigang; Xu, Anjie; Li, Guichao; Zhang, Zhen; Housley, Dave; Ye, Jinsong

    2012-03-01

    To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

  16. Study of the Electrolytic Reduction of Uranium Oxide in LiCl-Li2O Molten Salts with an Integrated Cathode Assembly

    International Nuclear Information System (INIS)

    Park, Sung Bin; Seo, Chung Seok; Kang, Dae Seung; Kwon, Seon Gil; Park, Seong Won

    2005-01-01

    The electrolytic reduction of uranium oxide in a LiCl-Li 2 O molten salt system has been studied in a 10 g U 3 O 3 /batch-scale experimental apparatus with an integrated cathode assembly at 650 .deg. C. The integrated cathode assembly consists of an electric conductor, the uranium oxide to be reduced and the membrane for loading the uranium oxide. From the cyclic voltammograms for the LiCl-3 wt% Li 3 O system and the U 3 O 3 -LiCl-3 wt% Li 2 O system according to the materials of the membrane in the cathode assembly, the mechanisms of the predominant reduction reactions in the electrolytic reactor cell were to be understood; direct and indirect electrolytic reduction of uranium oxide. Direct and indirect electrolytic reductions have been performed with the integrated cathode assembly. Using the 325-mesh stainless steel screen the uranium oxide failed to be reduced to uranium metal by a direct and indirect electrolytic reduction because of a low current efficiency and with the porous magnesia membrane the uranium oxide was reduced successfully to uranium metal by an indirect electrolytic reduction because of a high current efficiency.

  17. Thermo-economic analysis of a solid oxide fuel cell and steam injected gas turbine plant integrated with woodchips gasification

    DEFF Research Database (Denmark)

    Mazzucco, Andrea; Rokni, Masoud

    2014-01-01

    cost on the generation cost is also presented. In order to discuss the investment cost, an economic analysis has been carried out and main parameters such as Net Present Value (NPV), internal rate of return (IRR) and Time of Return of Investment (TIR) are calculated and discussed.......This paper presents a thermo-economic analysis of an integrated biogas-fueled solid oxide fuel cell (SOFC) system for electric power generation. Basic plant layout consists of a gasification plant (GP), an SOFC and a retrofitted steam-injected gas turbine (STIG). Different system configurations...... and simulations are presented and investigated. A parallel analysis for simpler power plants, combining GP, SOFC, and hybrid gas turbine (GT) is carried out to obtain a reference point for thermodynamic results. Thermodynamic analysis shows energetic and exergetic efficiencies for optimized plant above 53% and 43...

  18. Integrated process using non-stoichiometric sulfides or oxides of potassium for making less active metals and hydrocarbons

    International Nuclear Information System (INIS)

    Swanson, R.

    1984-01-01

    Disclosed is a combinative integrated chemical process using inorganic reactants and yielding, if desired, organic products. The process involves first the production of elemental potassium by the thermal or thermal-reduced pressure decomposition of potassium oxide or potassium sulfide and distillation of the potassium. This elemental potassium is then used to reduce ores or ore concentrates of copper, zinc, lead, magnesium, cadmium, iron, arsenic, antimony or silver to yield one or more of these less active metals in elemental form. Process potassium can also be used to produce hydrogen by reaction with water or potassium hydroxide. This hydrogen is reacted with potassium to produce potassium hydride. Heating the latter with carbon produces potassium acetylide which forms acetylene when treated with water. Acetylene is hydrogenated to ethene or ethane with process hydrogen. Using Wurtz-Fittig reaction conditions, the ethane can be upgraded to a mixture of hydrocarbons boiling in the fuel range

  19. Colour and toxic characteristics of metakaolinite-hematite pigment for integrally coloured concrete, prepared from iron oxide recovered from a water treatment plant of an abandoned coal mine

    Science.gov (United States)

    Sadasivam, Sivachidambaram; Thomas, Hywel Rhys

    2016-07-01

    A metakaolinite-hematite (KH) red pigment was prepared using an ocherous iron oxide sludge recovered from a water treatment plant of an abandoned coal mine. The KH pigment was prepared by heating the kaolinite and the iron oxide sludge at kaolinite's dehydroxylation temperature. Both the raw sludge and the KH specimen were characterised for their colour properties and toxic characteristics. The KH specimen could serve as a pigment for integrally coloured concrete and offers a potential use for the large volumes of the iron oxide sludge collected from mine water treatment plants.

  20. Respiratory gating in cardiac PET

    DEFF Research Database (Denmark)

    Lassen, Martin Lyngby; Rasmussen, Thomas; Christensen, Thomas E

    2017-01-01

    BACKGROUND: Respiratory motion due to breathing during cardiac positron emission tomography (PET) results in spatial blurring and erroneous tracer quantification. Respiratory gating might represent a solution by dividing the PET coincidence dataset into smaller respiratory phase subsets. The aim...... stress (82)RB-PET. Respiratory rates and depths were measured by a respiratory gating system in addition to registering actual respiratory rates. Patients undergoing adenosine stress showed a decrease in measured respiratory rate from initial to later scan phase measurements [12.4 (±5.7) vs 5.6 (±4.......7) min(-1), P PET...

  1. Renal functional and structural integrity in infants with iron deficiency anemia: relation to oxidative stress and response to iron therapy.

    Science.gov (United States)

    El-Shimi, Mohamed S; El-Farrash, Rania A; Ismail, Eman A; El-Safty, Ibrahim A; El-Safty, A; Nada, Ahmed S; El-Gamel, Omayma A; Salem, Yomna M; Shoukry, Sara M

    2015-10-01

    Iron deficiency anemia (IDA) is the most common nutritional deficiency in the world. The aim of our study was to evaluate and compare renal functional and structural integrity in 50 infants with IDA and 50 healthy controls and to assess the relation between IDA and oxidative stress and response to iron therapy. This was a prospective study in which peripheral blood samples were collected from all study subjects and the following laboratory investigations performed: serum iron profile, urinary microalbumin, urinary leucine aminopeptidase (LAP), fractional excretion of sodium (FeNa), serum total antioxidant capacity (TAC), serum malondialdehyde (MDA), serum and urinary trace elements (iron, copper, zinc, calcium and magnesium). All patients received oral iron therapy and were followed-up for 3 months. The levels of baseline urinary markers were higher among the patients with IDA than among the controls (p < 0.05). Patients had a lower pre-therapy TAC and lower serum zinc and magnesium levels than controls as well as higher MDA and serum copper levels (p < 0.05). MDA level was positively correlated to microalbumin and LAP level (p < 0.05). Urinary LAP concentration was positively correlated to urinary trace element concentrations (p < 0.05). A significant decrease in microalbumin, LAP, FeNa, and urinary trace elements was observed post-iron therapy while hemoglobin and ferritin levels were increased (p < 0.05). Among the study subjects, IDA had an adverse influence on renal functional and structural integrity which could be reversed with iron therapy. Oxidative stress played an important role in the pathogenesis of renal injury in IDA.

  2. Plant Characteristics of an Integrated Solid Oxide Fuel Cell Cycle and a Steam Cycle

    DEFF Research Database (Denmark)

    Rokni, Masoud

    2010-01-01

    hydrocarbons in an adiabatic steam reformer (ASR). The pre-treated fuel then entered to the anode side of the SOFC. The remaining fuels after the SOFC stacks entered a catalytic burner for further combusting. The burned gases from the burner were then used to produce steam for the Rankine cycle in a heat......Plant characteristics of a system containing a solid oxide fuel cell (SOFC) cycle on the top of a Rankine cycle were investigated. Natural gas (NG) was used as the fuel for the plant. A desulfurization reactor removes the sulfur content in the fuel, while a pre-reformer broke down the heavier...... and the pre-reformer reactor had no effect on the plant efficiency, which was also true when decreasing the anode temperature. However, increasing the cathode temperature had a significant effect on the plant efficiency. In addition, decreasing the SOFC utilization factor from 0.8 to 0.7, increases the plant...

  3. Process modeling and optimization of industrial ethylene oxide reactor by integrating support vector regression and genetic algorithm

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Lahiri, S.; Khalfe, N. [National Inst. of Technology, Durgapur, West Bengal (India). Dept. of Chemical Engineering

    2009-02-15

    Process modeling and optimization strategies that integrate support vector regression (SVR) with differential evolution were used to model and optimize the commercial catalytic process for ethylene oxide (EO). EO is produced commercially in a shell and tube type EO reactor by reacting oxygen and ethylene at high temperature and pressure in the presence of a silver-based catalyst. The oxidation of ethylene involves a main reaction producing EO and an undesirable side reaction producing carbon dioxide. In this study, a process model was developed using an SVR method and genetic algorithms (GAs) that maximize the process performance. The optimized solutions, when verified in an actual industrial plant, resulted in a significant improvement in the EO production rate and catalyst selectivity. In the SVR-GA approach, an SVR model was constructed for correlating process data comprising values of operating and performance variables. Next, model inputs describing process operating variables were optimized using GAs to maximize the process performance. The GA has some unique advantages over the commonly used gradient-based deterministic optimization algorithms. The major advantage of the SVR-GA strategy is that modeling and optimization can be conducted exclusively from the historic process data wherein the detailed knowledge of reaction mechanism or kinetics is not required. 14 refs., 5 tabs., 7 figs.

  4. SiC Power MOSFET with Improved Gate Dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Sbrockey, Nick M. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Spencer, Michael G. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Chandrashekhar, Chandra M.V. S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  5. Robust logic gates and realistic quantum computation

    International Nuclear Information System (INIS)

    Xiao Li; Jones, Jonathan A.

    2006-01-01

    The composite rotation approach has been used to develop a range of robust quantum logic gates, including single qubit gates and two qubit gates, which are resistant to systematic errors in their implementation. Single qubit gates based on the BB1 family of composite rotations have been experimentally demonstrated in a variety of systems, but little study has been made of their application in extended computations, and there has been no experimental study of the corresponding robust two qubit gates to date. Here we describe an application of robust gates to nuclear magnetic resonance studies of approximate quantum counting. We find that the BB1 family of robust gates is indeed useful, but that the related NB1, PB1, B4, and P4 families of tailored logic gates are less useful than initially expected

  6. Gating Technology for Vertically Parted Green Sand Moulds

    DEFF Research Database (Denmark)

    Larsen, Per

    Gating technology for vertically parted green sand moulds. Literature study of different ways of designing gating systems.......Gating technology for vertically parted green sand moulds. Literature study of different ways of designing gating systems....

  7. Integrated Planar Solid Oxide Fuel Cell: Steady-State Model of a Bundle and Validation through Single Tube Experimental Data

    Directory of Open Access Journals (Sweden)

    Paola Costamagna

    2015-11-01

    Full Text Available This work focuses on a steady-state model developed for an integrated planar solid oxide fuel cell (IP-SOFC bundle. In this geometry, several single IP-SOFCs are deposited on a tube and electrically connected in series through interconnections. Then, several tubes are coupled to one another to form a full-sized bundle. A previously-developed and validated electrochemical model is the basis for the development of the tube model, taking into account in detail the presence of active cells, interconnections and dead areas. Mass and energy balance equations are written for the IP-SOFC tube, in the classical form adopted for chemical reactors. Based on the single tube model, a bundle model is developed. Model validation is presented based on single tube current-voltage (I-V experimental data obtained in a wide range of experimental conditions, i.e., at different temperatures and for different H2/CO/CO2/CH4/H2O/N2 mixtures as the fuel feedstock. The error of the simulation results versus I-V experimental data is less than 1% in most cases, and it grows to a value of 8% only in one case, which is discussed in detail. Finally, we report model predictions of the current density distribution and temperature distribution in a bundle, the latter being a key aspect in view of the mechanical integrity of the IP-SOFC structure.

  8. Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

    International Nuclear Information System (INIS)

    Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

    2011-01-01

    Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

  9. Bill Gates eyes healthcare market.

    Science.gov (United States)

    Dunbar, C

    1995-02-01

    The entrepreneurial spirit is still top in Bill Gates' mind as he look toward healthcare and other growth industries. Microsoft's CEO has not intention of going the way of other large technology companies that became obsolete before they could compete today.

  10. Work Function Tuning in Sub-20nm Titanium Nitride (TiN) Metal Gate: Mechanism and Engineering

    KAUST Repository

    Hasan, Mehdi

    2011-07-01

    Scaling of transistors (the building blocks of modern information age) provides faster computation at the expense of excessive power dissipation. Thus to address these challenges, high-k/metal gate stack has been introduced in commercially available microprocessors from 2007. Since then titanium nitride (TiN) metal gate’s work function (Wf) tunability with its thickness (thickness increases, work function increases) is a well known phenomenon. Many hypotheses have been made over the years which include but not limited to: trap charge and metal gate nucleation, nitrogen concentration, microstructure agglomeration and global stress, metal oxide formation, and interfacial oxide thickness. However, clear contradictions exist in these assumptions. Also, nearly all these reports skipped a comprehensive approach to explain this complex paradigm. Therefore, in this work we first show a comprehensive physical investigation using transmission electron microcopy/electron energy loss spectroscopy (TEM/EELS), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) to show replacement of oxygen by nitrogen in the metal/dielectric interface, formation of TiONx, reduction of Ti/N concentration and grain size increment happen with TiN thickness increment and thus may increase the work function. Then, using these finding, we experimentally show 100meV of work function modulation in 10nm TiN Metal-oxide-semiconductor capacitor by using low temperature oxygen annealing. A low thermal budget flow (replicating gate-last) shows similar work function boost up. Also, a work function modulation of 250meV has been possible using oxygen annealing and applying no thermal budget. On the other hand, etch-back of TiN layer can decrease the work function. Thus this study quantifies role of various factors in TiN work function tuning; it also reproduces the thickness varied TiN work function modulation in single thickness TiN thus reducing the

  11. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

    Science.gov (United States)

    Rigante, Sara; Scarbolo, Paolo; Wipf, Mathias; Stoop, Ralph L; Bedner, Kristine; Buitrago, Elizabeth; Bazigos, Antonios; Bouvet, Didier; Calame, Michel; Schönenberger, Christian; Ionescu, Adrian M

    2015-05-26

    Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully depleted FinFETs with critical dimensions on the order of 20 nm and HfO2 as a high-k gate insulator have been developed and characterized, showing excellent electrical properties, subthreshold swing, SS ∼ 70 mV/dec, and on-to-off current ratio, Ion/Ioff ∼ 10(6), at room temperature. The same FinFET architecture is validated as a highly sensitive, stable, and reproducible pH sensor. An intrinsic sensitivity close to the Nernst limit, S = 57 mV/pH, is achieved. The pH response in terms of output current reaches Sout = 60%. Long-term measurements have been performed over 4.5 days with a resulting drift in time δVth/δt = 0.10 mV/h. Finally, we show the capability to reproduce experimental data with an extended three-dimensional commercial finite element analysis simulator, in both dry and wet environments, which is useful for future advanced sensor design and optimization.

  12. Gate induced drain leakage reduction with analysis of gate fringing field effect on high-κ/metal gate CMOS technology

    Science.gov (United States)

    Jang, Esan; Shin, Sunhae; Jung, Jae Won; Rok Kim, Kyung

    2015-06-01

    We suggest the optimum permittivity for a high-κ/metal gate (HKMG) CMOS structure based on the trade-off characteristics between the fringing field induced barrier lowering (FIBL) and gate induced drain leakage (GIDL). By adopting the high-κ gate dielectric, the GIDL from the band-to-band tunneling at the interface of gate and lightly doped drain (LDD) is suppressed with wide tunneling width owing to the enhanced fringing field, while the FIBL effects is degenerated as the previous reports. These two effects from the gate fringing field are studied extensively to manage the leakage current of HKMG for low power applications.

  13. ``Gate-to-gate`` BJT obtained from the double-gate input JFET to reset charge preamplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Fazzi, A. [Politecnico di Milano (Italy). Dipartimento di Ingegneria Nucleare; Rehak, P. [Brookhaven National Laboratory, Upton, NY 11973 (United States)

    1996-08-01

    A novel charge restoration mechanism to reset charge sensitive preamplifiers is presented. The ``gate-to-gate`` Bipolar Junction Transistor transversal to the input JFET with independent top and bottom gates is exploited as a ``reset transistor`` embodied in the preamplifier input device. The p-n junction between the bottom gate and the channel is forward-biased by a proper feedback loop supplying the necessary restoration current to the input node capacitance through the top gate-channel reversed-biased junction. The continuous reset mode is here analysed with reference to the DC stability, the pulse response and the noise behaviour. Experimental results are reported. (orig.).

  14. Nano integrated lithium polymer electrolytes based on anodic aluminum oxide (AAO) templates

    Science.gov (United States)

    Bokalawela, Roshan S. P.

    Since their discovery in the 1970s, polymer electrolytes have been actively studied because they have properties important for many device applications. However, even after 40 years, the detailed mechanisms of conductivity in these electrolytes are still not completely understood. Moreover, the conductivity in polymer electrolytes is one of the limiting factors of these devices so that different methods to enhance conductivity are actively being explored. One proposed method of enhancing the conductivity is to confine the polymer electrolyte in the nanoscale, but the study of material properties at the nanoscale is challenging in this area. In this work, we confine poly(ethylene oxide) lithium triflate (PEO:LiTf)(X:1)X=10,30 polymer electrolytes in carefully fabricated nanometer-diameter anodized aluminum oxide (AAO) pore structures. We demonstrate two orders of magnitude higher conductivity in the confined structures versus that of bulk films. Using x-ray characterization we show that this increased conductivity is associated with ordered PEO polymer chains aligned in the template pore direction. The activation energy of the AAO-confined polymer electrolyte is found to be smaller than that of the unconfined melt and about half that of the unconfined solid. This result indicates that not only is the room-temperature confined polymer ordered, but that this order persists at temperatures where the nano-confined polymer electrolyte is expected to be a liquid. The geometric bulk resistances of the electrolytes were obtained by AC-impedance spectra, from which the ionic conductivities were calculated. The Arrhenius plots of temperature dependent ionic conductivities showed that the usual melting temperature of the PEO phase in confined PEO:LiTf(X:1) X=10,30 is suppressed and a single activation energy was evident throughout the temperature range 25--90 °C. Wide-angle x-ray scattering (WAXS) patterns show that the polymer chains in both the pure PEO and PEO:LiTf(10

  15. Colour and toxic characteristics of metakaolinite–hematite pigment for integrally coloured concrete, prepared from iron oxide recovered from a water treatment plant of an abandoned coal mine

    Energy Technology Data Exchange (ETDEWEB)

    Sadasivam, Sivachidambaram, E-mail: sadasivams@cardiff.ac.uk; Thomas, Hywel Rhys

    2016-07-15

    A metakaolinite-hematite (KH) red pigment was prepared using an ocherous iron oxide sludge recovered from a water treatment plant of an abandoned coal mine. The KH pigment was prepared by heating the kaolinite and the iron oxide sludge at kaolinite's dehydroxylation temperature. Both the raw sludge and the KH specimen were characterised for their colour properties and toxic characteristics. The KH specimen could serve as a pigment for integrally coloured concrete and offers a potential use for the large volumes of the iron oxide sludge collected from mine water treatment plants. - Graphical abstract: A kaolinite based red pigment was prepared using an ocherous iron oxide sludge recovered from an abandoned coal mine water treatment plant. Display Omitted - Highlights: • A red pigment was prepared by heating a kaolinite and an iron oxide sludge. • The iron oxide and the pigment were characterised for their colour properties. • The red pigment can be a potential element for integrally coloured concrete.

  16. Colour and toxic characteristics of metakaolinite–hematite pigment for integrally coloured concrete, prepared from iron oxide recovered from a water treatment plant of an abandoned coal mine

    International Nuclear Information System (INIS)

    Sadasivam, Sivachidambaram; Thomas, Hywel Rhys

    2016-01-01

    A metakaolinite-hematite (KH) red pigment was prepared using an ocherous iron oxide sludge recovered from a water treatment plant of an abandoned coal mine. The KH pigment was prepared by heating the kaolinite and the iron oxide sludge at kaolinite's dehydroxylation temperature. Both the raw sludge and the KH specimen were characterised for their colour properties and toxic characteristics. The KH specimen could serve as a pigment for integrally coloured concrete and offers a potential use for the large volumes of the iron oxide sludge collected from mine water treatment plants. - Graphical abstract: A kaolinite based red pigment was prepared using an ocherous iron oxide sludge recovered from an abandoned coal mine water treatment plant. Display Omitted - Highlights: • A red pigment was prepared by heating a kaolinite and an iron oxide sludge. • The iron oxide and the pigment were characterised for their colour properties. • The red pigment can be a potential element for integrally coloured concrete.

  17. 14-1: Large-Area Processing of Solution Type Metal-Oxide in TFT Backplanes and Integration in Highly Stable OLED Displays

    NARCIS (Netherlands)

    Marinkovic, M.; Takata, R.; Neumann, A.; Pham, D.V.; Anselmann, R.; Maas, J.; Steen, J.L. van der; Gelinck, G.; Ilias Katsouras

    2017-01-01

    Solution type metal-oxide semiconductor was processed on mass-production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm x 352 mm), resulting in homogeneous

  18. Simulation of tubular solid oxide fuel cell behavior for integration into gas turbine cycles

    Science.gov (United States)

    Haynes, Comas Lamar

    Models have been developed and validated for the characterization of tubular solid oxide fuel cells (TSOFCs) and a corresponding fuel cell/gas turbine (FC/GT) power cycle. This promising area of technology is expected to attain near-term commercialization (most notably the SiemensWestinghouse "SureCell" initiative). There is a need for continued conceptual design research in order for the full potential of these systems to be realized. Parametric studies were performed to delineate the impact of cell stack operating conditions on power generation, cell stack thermal management, independent cell load-following and performance quality. The diverse operating conditions included variations in physical cell design, stack pressure, operating voltage, stoichiometric number and stack fuel utilization. A number of novel findings are reported throughout the thesis. As an example, it has been shown that lowering cell stack fuel utilization has a number of benefits for both the simple TSOFC arrangement and the hybrid TSOFC/ GT scenario. The cell stack produces more power at lower fuel utilizations, because fuel supply to the stack actually increases. Additionally, fuel depletion issues (i.e., Nernst potential decrease and smaller limiting currents) are not as influential. A gas turbine bottoming engine would also increase in power production, at lower stack fuel utilizations, because a greater amount of fuel would then fire it. Note that power generation expense is measured per unit rating (e.g., $/kW). Increasing power capacity may then be a means of lowering cost, which is the key obstacle to commercialization. Another cost reduction may stein from the greater contribution of turbomachinery to system power generation, when stack fuel utilization is lowered. FC/GT system efficiency remains stable across a wide domain of cell stack fuel utilizations. This is a result of both the indirect internally reforming (IIR) fuel processor efficiency and Brayton cycle regeneration

  19. Construction of a fuzzy and Boolean logic gates based on DNA.

    Science.gov (United States)

    Zadegan, Reza M; Jepsen, Mette D E; Hildebrandt, Lasse L; Birkedal, Victoria; Kjems, Jørgen

    2015-04-17

    Logic gates are devices that can perform logical operations by transforming a set of inputs into a predictable single detectable output. The hybridization properties, structure, and function of nucleic acids can be used to make DNA-based logic gates. These devices are important modules in molecular computing and biosensing. The ideal logic gate system should provide a wide selection of logical operations, and be integrable in multiple copies into more complex structures. Here we show the successful construction of a small DNA-based logic gate complex that produces fluorescent outputs corresponding to the operation of the six Boolean logic gates AND, NAND, OR, NOR, XOR, and XNOR. The logic gate complex is shown to work also when implemented in a three-dimensional DNA origami box structure, where it controlled the position of the lid in a closed or open position. Implementation of multiple microRNA sensitive DNA locks on one DNA origami box structure enabled fuzzy logical operation that allows biosensing of complex molecular signals. Integrating logic gates with DNA origami systems opens a vast avenue to applications in the fields of nanomedicine for diagnostics and therapeutics. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Removal of multi-dye wastewater by the novel integrated adsorption and Fenton oxidation process in a fluidized bed reactor.

    Science.gov (United States)

    Lyu, Cong; Zhou, Dandan; Wang, Jun

    2016-10-01

    Traditionally, a few processes have to be employed in sequence for multi-dye removal, due to the different physical and chemical characteristics of the dyes. In this study, we innovatively developed an integrated adsorption and Fenton oxidation fluidized bed reactor (FBR) based on the hydraulic classification theory, which could efficiently remove dispersed red, acid yellow, and reactive brilliant dyes. The fluidized solids such as ceramsite and activated carbon could be separately fluidized at the bottom and the top part of the FBR, respectively. As a result, Fenton oxidization of dyes was promoted by the fluidization of ceramsite and activated carbon. Besides, adsorption of activated carbon could synergistically act on the dyes. The results showed that the removal efficiencies of acid yellow 2G, disperse red 60, and reactive brilliant blue X-BR could reach 100, 79.8, and 84.9 % in 10 min, respectively. Lots of intermediates with unsaturated bonds were generated during Fenton reaction, which was further removed by adsorption of activated carbon. Consequently, a high COD removal of 93 % was obtained. Interestingly, some of Fe 3+ produced during Fenton reaction was further precipitated and crystallized as FeO(OH) or Fe(OH) 3 on the surface of activated carbon and ceramsite, which could be potentially recycled for further utilization as a heterogeneous catalyst. Meanwhile, the other Fe 3+ might be removed in the form of ferro-organic complexes by adsorption onto the activated carbon. Thus, only a little iron hydroxide sludge was generated in the FBR. This novel FBR gave us an effective clue to realize multi-reactions for textile wastewater treatment by employing hydraulic classification fluidization.

  1. Dynamic modelling and characterisation of a solid oxide fuel cell integrated in a gas turbine cycle

    Energy Technology Data Exchange (ETDEWEB)

    Thorud, Bjoern

    2005-07-01

    This thesis focuses on three main areas within the field of SOFC/GT-technology: 1) Development of a dynamic SOFC/GT model. 2) Model calibration and sensitivity study. 3) Assessment of the dynamic properties of a SOFC/GT power plant. The SOFC/GT model developed in this thesis describes a pressurised tubular Siemens Westinghouse-type SOFC, which is integrated in a gas turbine cycle. The process further includes a plate-fin recuperator for stack air preheating, a prereformer, an anode exhaust gas recycling loop for steam/carbon-ratio control, an afterburner and a shell-tube heat exchanger for air preheating. The fuel cell tube, the recuperator and the shell-tube heat exchanger are spatially distributed models. The SOFC model is further thermally integrated with the prereformer. The compressor and turbine models are based on performance maps as a general representation of the characteristics. In addition, a shaft model which incorporates moment of inertia is included to account for gas turbine transients. The SOFC model is calibrated against experimentally obtained data from a single-cell experiment performed on a Siemens Westinghouse tubular SOFC. The agreement between the model and the experimental results is good. The sensitivity study revealed that the degree of prereforming is of great importance with respect to the axial temperature distribution of the fuel cell. Types of malfunctions are discussed prior to the dynamic behaviour study. The dynamic study of the SOFC/GT process is performed by simulating small and large load changes according to three different strategies; 1) Load change at constant mean fuel cell temperature. 2) Load change at constant turbine inlet temperature. 3) Load change at constant shaft speed. Of these three strategies, the constant mean fuel cell temperature strategy appears to be the most rapid load change method. Furthermore, this strategy implies the lowest degree of thermal cycling, the smoothest fuel cell temperature distribution and

  2. All-optical logic gates in plasmonic metal-insulator-metal nanowaveguide with slot cavity resonator

    Science.gov (United States)

    Dolatabady, Alireza; Granpayeh, Nosrat

    2017-04-01

    We demonstrate the compact all-optical logic XOR and OR gates in subwavelength plasmonic metal-insulator-metal waveguides with slot cavity resonators, especially for telecommunication wavelengths, with an extinction ratio of 25 dB, which can provide nanoscale logic integrated circuits. The gates behavior is based on suppression or enhancement of resonant modes in a slot cavity resonator induced by a change in position of input ports. The performance of the gates is discussed analytically and verified by the numerical method of finite-difference time-domain (FDTD).

  3. A type of all-optical logic gate based on graphene surface plasmon polaritons

    Science.gov (United States)

    Wu, Xiaoting; Tian, Jinping; Yang, Rongcao

    2017-11-01

    In this paper, a novel type of all-optical logic device based on graphene surface plasmon polaritons (GSP) is proposed. By utilizing linear interference between the GSP waves propagating in the different channels, this new structure can realize six different basic logic gates including OR, XOR, NOT, AND, NOR, and NAND. The state of ;ON/OFF; of each input channel can be well controlled by tuning the optical conductivity of graphene sheets, which can be further controlled by changing the external gate voltage. This type of logic gate is compact in geometrical sizes and is a potential block in the integration of nanophotonic devices.

  4. Construction of a fuzzy and all Boolean logic gates based on DNA

    DEFF Research Database (Denmark)

    M. Zadegan, Reza; Jepsen, Mette D E; Hildebrandt, Lasse

    2015-01-01

    to the operation of the six Boolean logic gates AND, NAND, OR, NOR, XOR, and XNOR. The logic gate complex is shown to work also when implemented in a three-dimensional DNA origami box structure, where it controlled the position of the lid in a closed or open position. Implementation of multiple microRNA sensitive...... DNA locks on one DNA origami box structure enabled fuzzy logical operation that allows biosensing of complex molecular signals. Integrating logic gates with DNA origami systems opens a vast avenue to applications in the fields of nanomedicine for diagnostics and therapeutics....

  5. 'Integration'

    DEFF Research Database (Denmark)

    Olwig, Karen Fog

    2011-01-01

    , while the countries have adopted disparate policies and ideologies, differences in the actual treatment and attitudes towards immigrants and refugees in everyday life are less clear, due to parallel integration programmes based on strong similarities in the welfare systems and in cultural notions...

  6. Geothermal Thermoelectric Generation (G-TEG) with Integrated Temperature Driven Membrane Distillation and Novel Manganese Oxide for Lithium Extraction

    Energy Technology Data Exchange (ETDEWEB)

    Renew, Jay [Southern Research Inst., Birmingham, AL (United States); Hansen, Tim [Southern Research Inst., Birmingham, AL (United States)

    2017-06-01

    Southern Research Institute (Southern) teamed with partners Novus Energy Technologies (Novus), Carus Corporation (Carus), and Applied Membrane Technology, Inc. (AMT) to develop an innovative Geothermal ThermoElectric Generation (G-TEG) system specially designed to both generate electricity and extract high-value lithium (Li) from low-temperature geothermal brines. The process combined five modular technologies including – silica removal, nanofiltration (NF), membrane distillation (MD), Mn-oxide sorbent for Li recovery, and TEG. This project provides a proof of concept for each of these technologies. The first step in the process is silica precipitation through metal addition and pH adjustment to prevent downstream scaling in membrane processes. Next, the geothermal brine is concentrated with the first of a two stage MD system. The first stage MD system is made of a high-temperature material to withstand geothermal brine temperatures up to 150C.° The first stage MD is integrated with a G-TEG module for simultaneous energy generation. The release of energy from the MD permeate drives heat transfer across the TE module, producing electricity. The first stage MD concentrate is then treated utilizing an NF system to remove Ca2+ and Mg2+. The NF concentrate will be disposed in the well by reinjection. The NF permeate undergoes concentration in a second stage of MD (polymeric material) to further concentrate Li in the NF permeate and enhance the efficiency of the downstream Li recovery process utilizing a Mn-oxide sorbent. Permeate from both the stages of the MD can be beneficially utilized as the permeates will contain less contaminants than the feed water. The concentrated geothermal brines are then contacted with the Mn-oxide sorbent. After Li from the geothermal brine is adsorbed on the sorbent, HCl is then utilized to regenerate the sorbent and recover the Li. The research and development project showed that the Si removal goal (>80%) could

  7. Integrated Biomass Gasification with Catalytic Partial Oxidation for Selective Tar Conversion

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lingzhi; Wei, Wei; Manke, Jeff; Vazquez, Arturo; Thompson, Jeff; Thompson, Mark

    2011-05-28

    requirement for commercial deployment of biomass-based power/heat co-generation and biofuels production. There are several commonly used syngas clean-up technologies: (1) Syngas cooling and water scrubbing has been commercially proven but efficiency is low and it is only effective at small scales. This route is accompanied with troublesome wastewater treatment. (2) The tar filtration method requires frequent filter replacement and solid residue treatment, leading to high operation and capital costs. (3) Thermal destruction typically operates at temperatures higher than 1000oC. It has slow kinetics and potential soot formation issues. The system is expensive and materials are not reliable at high temperatures. (4) In-bed cracking catalysts show rapid deactivation, with durability to be demonstrated. (5) External catalytic cracking or steam reforming has low thermal efficiency and is faced with problematic catalyst coking. Under this program, catalytic partial oxidation (CPO) is being evaluated for syngas tar clean-up in biomass gasification. The CPO reaction is exothermic, implying that no external heat is needed and the system is of high thermal efficiency. CPO is capable of processing large gas volume, indicating a very compact catalyst bed and a low reactor cost. Instead of traditional physical removal of tar, the CPO concept converts tar into useful light gases (eg. CO, H2, CH4). This eliminates waste treatment and disposal requirements. All those advantages make the CPO catalytic tar conversion system a viable solution for biomass gasification downstream gas clean-up. This program was conducted from October 1 2008 to February 28 2011 and divided into five major tasks. - Task A: Perform conceptual design and conduct preliminary system and economic analysis (Q1 2009 ~ Q2 2009) - Task B: Biomass gasification tests, product characterization, and CPO tar conversion catalyst preparation. This task will be conducted after completing process design and system economics analysis

  8. Liquid–Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing

    KAUST Repository

    Zhang, Yu

    2017-10-17

    Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid–liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the “sensing channel” can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

  9. Simulation of 50-nm Gate Graphene Nanoribbon Transistors

    Directory of Open Access Journals (Sweden)

    Cedric Nanmeni Bondja

    2016-01-01

    Full Text Available An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

  10. Insight into DEG/ENaC channel gating from genetics and structure.

    Science.gov (United States)

    Eastwood, Amy L; Goodman, Miriam B

    2012-10-01

    The founding members of the superfamily of DEG/ENaC ion channel proteins are C. elegans proteins that form mechanosensitive channels in touch and pain receptors. For more than a decade, the research community has used mutagenesis to identify motifs that regulate gating. This review integrates insight derived from unbiased in vivo mutagenesis screens with recent crystal structures to develop new models for activation of mechanically gated DEGs.

  11. Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures

    Directory of Open Access Journals (Sweden)

    Yongqi Dong

    2017-05-01

    Full Text Available The effect of gate voltage polarity on the behavior of NdNiO3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (∼3% and pronounced lattice expansion (0.17% in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.

  12. Voltage-gated Proton Channels

    Science.gov (United States)

    DeCoursey, Thomas E.

    2014-01-01

    Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

  13. A compact model for single material double work function gate MOSFET

    Science.gov (United States)

    Changyong, Zheng; Wei, Zhang; Tailong, Xu; Yuehua, Dai; Junning, Chen

    2013-09-01

    An analytical surface potential model for the single material double work function gate (SMDWG) MOSFET is developed based on the exact resultant solution of the two-dimensional Poisson equation. The model includes the effects of drain biases, gate oxide thickness, different combinations of S-gate and D-gate length and values of substrate doping concentration. More attention has been paid to seeking to explain the attributes of the SMDWG MOSFET, such as suppressing drain-induced barrier lowering (DIBL), accelerating carrier drift velocity and device speed. The model is verified by comparison to the simulated results using the device simulator MEDICI. The accuracy of the results obtained using our analytical model is verified using numerical simulations. The model not only offers the physical insight into device physics but also provides the basic designing guideline for the device.

  14. Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics

    Science.gov (United States)

    Kyoung, Sinsu; Hong, Young-sung; Lee, Myung-hwan; Nam, Tae-jin

    2018-02-01

    In order to enhance specific on-resistance (Ron,sp), the trench gate structure was also introduced into 4H-SiC MOSFET as Si MOSFET. But the 4H-SiC trench gate has worse off-state characteristics than the Si trench gate due to the incomplete gate oxidation process (Šimonka et al., 2017). In order to overcome this problem, P-shielding trench gate MOSFET (TMOS) was proposed and researched in previous studies. But P-shielding has to be designed with minimum design rule in order to protect gate oxide effectively. P-shielding TMOS also has the drawback of on-state characteristics degradation corresponding to off state improvement for minimum design rule. Therefore optimized design is needed to satisfy both on and off characteristics. In this paper, the design parameters were analyzed and optimized so that the 4H-SiC P-shielding TMOS satisfies both on and off characteristics. Design limitations were proposed such that P-shielding is able to defend the gate oxide. The P-shielding layer should have the proper junction depth and concentration to defend the electric field to gate oxide during the off-state. However, overmuch P-shielding junction depth disturbs the on-state current flow, a problem which can be solved by increasing the trench depth. As trench depth increases, however, the breakdown voltage decreases. Therefore, trench depth should be designed with due consideration for on-off characteristics. For this, design conditions and modeling were proposed which allow P-shielding to operate without degradation of on-state characteristics. Based on this proposed model, the 1200 V 4H-SiC P-shielding trench gate MOSFET was designed and optimized.

  15. Bioelectronic Interface Connecting Reversible Logic Gates Based on Enzyme and DNA Reactions.

    Science.gov (United States)

    Guz, Nataliia; Fedotova, Tatiana A; Fratto, Brian E; Schlesinger, Orr; Alfonta, Lital; Kolpashchikov, Dmitry M; Katz, Evgeny

    2016-07-18

    It is believed that connecting biomolecular computation elements in complex networks of communicating molecules may eventually lead to a biocomputer that can be used for diagnostics and/or the cure of physiological and genetic disorders. Here, a bioelectronic interface based on biomolecule-modified electrodes has been designed to bridge reversible enzymatic logic gates with reversible DNA-based logic gates. The enzyme-based Fredkin gate with three input and three output signals was connected to the DNA-based Feynman gate with two input and two output signals-both representing logically reversible computing elements. In the reversible Fredkin gate, the routing of two data signals between two output channels was controlled by the control signal (third channel). The two data output signals generated by the Fredkin gate were directed toward two electrochemical flow cells, responding to the output signals by releasing DNA molecules that serve as the input signals for the next Feynman logic gate based on the DNA reacting cascade, producing, in turn, two final output signals. The Feynman gate operated as the controlled NOT gate (CNOT), where one of the input channels controlled a NOT operation on another channel. Both logic gates represented a highly sophisticated combination of input-controlled signal-routing logic operations, resulting in redirecting chemical signals in different channels and performing orchestrated computing processes. The biomolecular reaction cascade responsible for the signal processing was realized by moving the solution from one reacting cell to another, including the reacting flow cells and electrochemical flow cells, which were organized in a specific network mimicking electronic computing circuitries. The designed system represents the first example of high complexity biocomputing processes integrating enzyme and DNA reactions and performing logically reversible signal processing. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Life cycle assessment integrated with thermodynamic analysis of bio-fuel options for solid oxide fuel cells.

    Science.gov (United States)

    Lin, Jiefeng; Babbitt, Callie W; Trabold, Thomas A

    2013-01-01

    A methodology that integrates life cycle assessment (LCA) with thermodynamic analysis is developed and applied to evaluate the environmental impacts of producing biofuels from waste biomass, including biodiesel from waste cooking oil, ethanol from corn stover, and compressed natural gas from municipal solid wastes. Solid oxide fuel cell-based auxiliary power units using bio-fuel as the hydrogen precursor enable generation of auxiliary electricity for idling heavy-duty trucks. Thermodynamic analysis is applied to evaluate the fuel conversion efficiency and determine the amount of fuel feedstock needed to generate a unit of electrical power. These inputs feed into an LCA that compares energy consumption and greenhouse gas emissions of different fuel pathways. Results show that compressed natural gas from municipal solid wastes is an optimal bio-fuel option for SOFC-APU applications in New York State. However, this methodology can be regionalized within the U.S. or internationally to account for different fuel feedstock options. Copyright © 2012 Elsevier Ltd. All rights reserved.

  17. Tertiary treatment of landfill leachate by an integrated Electro-Oxidation/Electro-Coagulation/Electro-Reduction process: Performance and mechanism.

    Science.gov (United States)

    Ding, Jing; Wei, Liangliang; Huang, Huibin; Zhao, Qingliang; Hou, Weizhu; Kabutey, Felix Tetteh; Yuan, Yixing; Dionysiou, Dionysios D

    2018-06-05

    This study presents an integrated Electro-Oxidation/Electro-Coagulation/Electro-Reduction (EO/EC/ER) process for tertiary landfill leachate treatment. The influence of variables including leachate characteristics and operation conditions on the performance of EO/EC/ER process was evaluated. The removal mechanisms were explored by comparing results of anode, cathode, and bipolar electrode substitution experiments. The performance of the process in a scaled-up reactor was investigated to assure the feasibility of the process. Results showed that simultaneous removal of carbonaceous and nitrogenous pollutants was achieved under optimal conditions. Ammonia removal was due to the free chlorine generation of EO while organic matter degradation was achieved by both EO and EC processes. Nitrate removal was attributed to both ER and EC processes, with the higher removal achieved by ER process. In a scaled-up reactor, the EO/EC/ER process was able to remove 50-60% organic matter and 100% ammonia at charge of 1.5 Ah/L with energy consumption of 15 kW h/m 3 . Considering energy cost, the process is more efficient to meet the requirement of organic removal efficiency less than 70%. These results show the feasibility and potential of the EO/EC/ER process as an alternative tertiary treatment to achieve the simultaneous removal of organic matter, ammonia, nitrate, and color of leachate. Copyright © 2018 Elsevier B.V. All rights reserved.

  18. Adaptive control paradigm for photovoltaic and solid oxide fuel cell in a grid-integrated hybrid renewable energy system

    Science.gov (United States)

    Khan, Laiq

    2017-01-01

    The hybrid power system (HPS) is an emerging power generation scheme due to the plentiful availability of renewable energy sources. Renewable energy sources are characterized as highly intermittent in nature due to meteorological conditions, while the domestic load also behaves in a quite uncertain manner. In this scenario, to maintain the balance between generation and load, the development of an intelligent and adaptive control algorithm has preoccupied power engineers and researchers. This paper proposes a Hermite wavelet embedded NeuroFuzzy indirect adaptive MPPT (maximum power point tracking) control of photovoltaic (PV) systems to extract maximum power and a Hermite wavelet incorporated NeuroFuzzy indirect adaptive control of Solid Oxide Fuel Cells (SOFC) to obtain a swift response in a grid-connected hybrid power system. A comprehensive simulation testbed for a grid-connected hybrid power system (wind turbine, PV cells, SOFC, electrolyzer, battery storage system, supercapacitor (SC), micro-turbine (MT) and domestic load) is developed in Matlab/Simulink. The robustness and superiority of the proposed indirect adaptive control paradigm are evaluated through simulation results in a grid-connected hybrid power system testbed by comparison with a conventional PI (proportional and integral) control system. The simulation results verify the effectiveness of the proposed control paradigm. PMID:28329015

  19. Integrating nanohybrid membranes of reduced graphene oxide: chitosan: silica sol gel with fiber optic SPR for caffeine detection

    Science.gov (United States)

    Kant, Ravi; Tabassum, Rana; Gupta, Banshi D.

    2017-05-01

    Caffeine is the most popular psychoactive drug consumed in the world for improving alertness and enhancing wakefulness. However, caffeine consumption beyond limits can result in lot of physiological complications in human beings. In this work, we report a novel detection scheme for caffeine integrating nanohybrid membranes of reduced graphene oxide (rGO) in chitosan modified silica sol gel (rGO: chitosan: silica sol gel) with fiber optic surface plasmon resonance. The chemically synthesized nanohybrid membrane forming the sensing route has been dip coated over silver coated unclad central portion of an optical fiber. The sensor works on the mechanism of modification of dielectric function of sensing layer on exposure to analyte solution which is manifested in terms of red shift in resonance wavelength. The concentration of rGO in polymer network of chitosan and silica sol gel and dipping time of the silver coated probe in the solution of nanohybrid membrane have been optimized to extricate the supreme performance of the sensor. The optimized sensing probe possesses a reasonably good sensitivity and follows an exponentially declining trend within the entire investigating range of caffeine concentration. The sensor boasts of an unparalleled limit of detection value of 1.994 nM and works well in concentration range of 0-500 nM with a response time of 16 s. The impeccable sensor methodology adopted in this work combining fiber optic SPR with nanotechnology furnishes a novel perspective for caffeine determination in commercial foodstuffs and biological fluids.

  20. Adaptive control paradigm for photovoltaic and solid oxide fuel cell in a grid-integrated hybrid renewable energy system.

    Science.gov (United States)

    Mumtaz, Sidra; Khan, Laiq

    2017-01-01

    The hybrid power system (HPS) is an emerging power generation scheme due to the plentiful availability of renewable energy sources. Renewable energy sources are characterized as highly intermittent in nature due to meteorological conditions, while the domestic load also behaves in a quite uncertain manner. In this scenario, to maintain the balance between generation and load, the development of an intelligent and adaptive control algorithm has preoccupied power engineers and researchers. This paper proposes a Hermite wavelet embedded NeuroFuzzy indirect adaptive MPPT (maximum power point tracking) control of photovoltaic (PV) systems to extract maximum power and a Hermite wavelet incorporated NeuroFuzzy indirect adaptive control of Solid Oxide Fuel Cells (SOFC) to obtain a swift response in a grid-connected hybrid power system. A comprehensive simulation testbed for a grid-connected hybrid power system (wind turbine, PV cells, SOFC, electrolyzer, battery storage system, supercapacitor (SC), micro-turbine (MT) and domestic load) is developed in Matlab/Simulink. The robustness and superiority of the proposed indirect adaptive control paradigm are evaluated through simulation results in a grid-connected hybrid power system testbed by comparison with a conventional PI (proportional and integral) control system. The simulation results verify the effectiveness of the proposed control paradigm.

  1. Integrating nanohybrid membranes of reduced graphene oxide: chitosan: silica sol gel with fiber optic SPR for caffeine detection.

    Science.gov (United States)

    Kant, Ravi; Tabassum, Rana; Gupta, Banshi D

    2017-05-12

    Caffeine is the most popular psychoactive drug consumed in the world for improving alertness and enhancing wakefulness. However, caffeine consumption beyond limits can result in lot of physiological complications in human beings. In this work, we report a novel detection scheme for caffeine integrating nanohybrid membranes of reduced graphene oxide (rGO) in chitosan modified silica sol gel (rGO: chitosan: silica sol gel) with fiber optic surface plasmon resonance. The chemically synthesized nanohybrid membrane forming the sensing route has been dip coated over silver coated unclad central portion of an optical fiber. The sensor works on the mechanism of modification of dielectric function of sensing layer on exposure to analyte solution which is manifested in terms of red shift in resonance wavelength. The concentration of rGO in polymer network of chitosan and silica sol gel and dipping time of the silver coated probe in the solution of nanohybrid membrane have been optimized to extricate the supreme performance of the sensor. The optimized sensing probe possesses a reasonably good sensitivity and follows an exponentially declining trend within the entire investigating range of caffeine concentration. The sensor boasts of an unparalleled limit of detection value of 1.994 nM and works well in concentration range of 0-500 nM with a response time of 16 s. The impeccable sensor methodology adopted in this work combining fiber optic SPR with nanotechnology furnishes a novel perspective for caffeine determination in commercial foodstuffs and biological fluids.

  2. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A. [Berkeley Sensor and Actuator Center, University of California, Davis, 1 Shields Avenue, Davis, California 95616 (United States); Tang, H.; Boser, B. E. [Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720 (United States); Tsai, J. M.; Daneman, M. [InvenSense, Inc., 1745 Technology Drive, San Jose, California 95110 (United States)

    2015-06-29

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

  3. Ion-Gel-Gated Graphene Optical Modulator with Hysteretic Behavior.

    Science.gov (United States)

    Kim, Jin Tae; Choi, Hongkyw; Choi, Yongsuk; Cho, Jeong Ho

    2018-01-17

    We propose a graphene-based optical modulator and comprehensively investigate its photonic characteristics by electrically controlling the device with an ion-gel top-gate dielectric. The density of the electrically driven charge carriers in the ion-gel gate dielectric plays a key role in tuning the optical output power of the device. The charge density at the ion-gel-graphene interface is tuned electrically, and the chemical potential of graphene is then changed to control its light absorption strength. The optical behavior of the ion-gel gate dielectric exhibits a large hysteresis which originates from the inherent nature of the ionic gel and the graphene-ion-gel interface and a slow polarization response time of ions. The photonic device is applicable to both TE- and TM-polarized light waves, covering two entire optical communication bands, the O-band (1.26-1.36 μm) and the C-band (1.52-1.565 μm). The experimental results are in good agreement with theoretically simulated predictions. The temporal behavior of the ion-gel-graphene-integrated optical modulator reveals a long-term modulation state because of the relatively low mobility of the ions in the ion-gel solution and formation of the electric double layer in the graphene-ion-gel interface. Fast dynamic recovery is observed by applying an opposite voltage gate pulse. This study paves the way to the understanding of the operational principles and future applications of ion-gel-gated graphene optical devices in photonics.

  4. Optimization of Ecg Gating in Quantitative Femoral Angiography

    International Nuclear Information System (INIS)

    Nilsson, S.; Berglund, I.; Erikson, U.; Johansson, J.; Walldius, G.

    2003-01-01

    Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase

  5. Optimization of Ecg Gating in Quantitative Femoral Angiography

    Energy Technology Data Exchange (ETDEWEB)

    Nilsson, S.; Berglund, I.; Erikson, U. [Univ. Hospital, Uppsala (Sweden). Dept. of Oncology, Radiology and Clinical Immunology; Johansson, J.; Walldius, G. [Karolinska Hospital, Stockholm (Sweden). King Gustav V Research Inst.

    2003-09-01

    Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase.

  6. Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.

    Science.gov (United States)

    Sun, Min-Chul; Kim, Garam; Kim, Sang Wan; Kim, Hyun Woo; Kim, Hyungjin; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook

    2012-07-01

    In order to extend the conventional low power Si CMOS technology beyond the 20-nm node without SOI substrates, we propose a novel co-integration scheme to build horizontal- and vertical-channel MOSFETs together and verify the idea using TCAD simulations. From the fabrication viewpoint, it is highlighted that this scheme provides additional vertical devices with good scalability by adding a few steps to the conventional CMOS process flow for fin formation. In addition, the benefits of the co-integrated vertical devices are investigated using a TCAD device simulation. From this study, it is confirmed that the vertical device shows improved off-current control and a larger drive current when the body dimension is less than 20 nm, due to the electric field coupling effect at the double-gated channel. Finally, the benefits from the circuit design viewpoint, such as the larger midpoint gain and beta and lower power consumption, are confirmed by the mixed-mode circuit simulation study.

  7. Cognitive mechanisms associated with auditory sensory gating

    Science.gov (United States)

    Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

    2016-01-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

  8. Fabrication of ambipolar gate-all-around field-effect transistors using silicon nanobridge arrays

    Science.gov (United States)

    Oh, Jin Yong; Park, Jong-Tae; Islam, M. Saif

    2013-09-01

    Nanowire bridges have been almost dormant in a nanostructured device community due to the challenges in reproducible growth and device fabrication. In this work, we present simple methods for creating silicon nanobridge arrays with repeatability, and demonstrate integration of gate-all-around field-effect-transistors in the arrays. P-type silicon nanowires air-bridges were synthesized using gold nanoparticles via the VLS technique on the array of predefined silicon electrode-pairs, and then surrounding gates were formed on the suspended air-bridge nanowires. The nanowire air-bridge field-effect-transistors with the surrounding gate exhibited p-type accumulation-mode characteristics with a subthreshold swing of 187 mV/dec and an on/off current ratio of 1.6×106. Despite the surrounding gate that helps gate biases govern the channel, off current substantially increased as drain bias increases. This ambipolar current-voltage property was attributable to gate-induced-drain-leakage at the overlap of gate and drain electrodes and trap-assisted tunneling at the nanowire and electrode connection.

  9. MCP gated x-ray framing camera

    Science.gov (United States)

    Cai, Houzhi; Liu, Jinyuan; Niu, Lihong; Liao, Hua; Zhou, Junlan

    2009-11-01

    A four-frame gated microchannel plate (MCP) camera is described in this article. Each frame photocathode coated with gold on the MCP is part of a transmission line with open circuit end driven by the gating electrical pulse. The gating pulse is 230 ps in width and 2.5 kV in amplitude. The camera is tested by illuminating its photocathode with ultraviolet laser pulses, 266 nm in wavelength, which shows exposure time as short as 80 ps.

  10. Gating-ML: XML-based gating descriptions in flow cytometry.

    Science.gov (United States)

    Spidlen, Josef; Leif, Robert C; Moore, Wayne; Roederer, Mario; Brinkman, Ryan R

    2008-12-01

    The lack of software interoperability with respect to gating due to lack of a standardized mechanism for data exchange has traditionally been a bottleneck, preventing reproducibility of flow cytometry (FCM) data analysis and the usage of multiple analytical tools. To facilitate interoperability among FCM data analysis tools, members of the International Society for the Advancement of Cytometry (ISAC) Data Standards Task Force (DSTF) have developed an XML-based mechanism to formally describe gates (Gating-ML). Gating-ML, an open specification for encoding gating, data transformations and compensation, has been adopted by the ISAC DSTF as a Candidate Recommendation. Gating-ML can facilitate exchange of gating descriptions the same way that FCS facilitated for exchange of raw FCM data. Its adoption will open new collaborative opportunities as well as possibilities for advanced analyses and methods development. The ISAC DSTF is satisfied that the standard addresses the requirements for a gating exchange standard.

  11. Integrated use of antioxidant enzymes and oxidative damage in two fish species to assess pollution in man-made hydroelectric reservoirs.

    Science.gov (United States)

    Sakuragui, M M; Paulino, M G; Pereira, C D S; Carvalho, C S; Sadauskas-Henrique, H; Fernandes, M N

    2013-07-01

    This study investigated the relationship between contaminant body burden and the oxidative stress status of the gills and livers of two wild fish species in the Furnas Hydroelectric Power Station (HPS) reservoir (Minas Gerais, Brazil). Gills and livers presented similar pathways of metals and organochlorine bioaccumulation. During June, organochlorines were associated with lipid peroxidation (LPO), indicating oxidative stress due to the inhibition of the antioxidant enzymes superoxide dismutase and glutathione peroxidase. In the most polluted areas, metal concentrations in the liver were associated with metallothionein. During December, contaminants in the gills and liver were associated with catalase activity and LPO. Aldrin/dieldrin was the contaminant most associated with oxidative damage in the livers of both species. This integrated approach shed light on the relationship between adverse biological effects and bioaccumulation of contaminants inputted by intensive agricultural practices and proved to be a suitable tool for assessing the environmental quality of man-made reservoirs. Copyright © 2013 Elsevier Ltd. All rights reserved.

  12. Effects of antioxidants on post-thawed bovine sperm and oxidative stress parameters: antioxidants protect DNA integrity against cryodamage.

    Science.gov (United States)

    Bucak, Mustafa Numan; Tuncer, Pürhan Barbaros; Sarıözkan, Serpil; Başpınar, Nuri; Taşpınar, Mehmet; Coyan, Kenan; Bilgili, Ali; Akalın, Pınar Peker; Büyükleblebici, Serhat; Aydos, Sena; Ilgaz, Seda; Sunguroğlu, Asuman; Oztuna, Derya

    2010-12-01

    This study was conducted to determine the effects of methionine, inositol and carnitine on sperm (motility, abnormality, DNA integrity and in vivo fertility) and oxidative stress parameters (lipid peroxidation, total glutathione and antioxidant potential levels) of bovine semen after the freeze-thawing process. Nine ejaculates, collected with the aid of an artificial vagina twice a week from each Simmental bovine, were included in the study. Each ejaculate, splitted into seven equal groups and diluted in Tris-based extender containing methionine (2.5 and 7.5 mM), carnitine (2.5 and 7.5 mM), inositol (2.5 and 7.5 mM) and no additive (control), was cooled to 5 °C and then frozen in 0.25 ml straws. Frozen straws were then thawed individually at 37 °C for 20s in a water bath for the evaluation. The extender supplemented with 7.5 mM doses of carnitine and inositol led to higher subjective motility percentages (61.9±1.3% and 51.3±1.6%) compared to the other groups. The addition of methionine and carnitine at doses of 2.5 and 7.5 mM and inositol at doses of 7.5mM provided a greater protective effect in the percentages of total abnormality in comparison to the control and inositol 2.5 mM (P control, thus reducing the DNA damage (P control group (P > 0.05). The maintenance of AOP level in methionine 2.5 mM was demonstrated to be higher (5.06±0.38 mM) than that of control (0.96±0.29 mM) following the freeze-thawing (P process protected the DNA integrity against the cryodamage. Furthermore, future research should focus on the molecular mechanisms of the antioxidative effects of the antioxidants methionine, carnitine and inositol during cryopreservation. Copyright © 2010 Elsevier Inc. All rights reserved.

  13. An integrated approach to identify critical transcription factors in the protection against hydrogen peroxide-induced oxidative stress by Danhong injection.

    Science.gov (United States)

    Zhang, Jingjing; Guo, Feifei; Wei, Junying; Xian, Minghua; Tang, Shihuan; Zhao, Ye; Liu, Mingwei; Song, Lei; Geng, Ya; Yang, Hongjun; Ding, Chen; Huang, Luqi

    2017-11-01

    Oxidative stress plays a vital role in many pathological processes of the cardiovascular diseases. However, the underlying mechanism remains unclear, especially on a transcription factor (TF) level. In this study, a new method, concatenated tandem array of consensus transcription factor response elements (catTFREs), and an Illumina-based RNA-seq technology were integrated to systematically investigate the role of TFs in hydrogen peroxide (H 2 O 2 )-induced oxidative stress in cardiomyocytes; the damage was then rescued by Danhong injection (DHI), a Chinese standardized product approved for cardiovascular diseases treatment. The overall gene expression revealed cell apoptosis and DNA repair were vital for cardiomyocytes in resisting oxidative stress. By comprehensively integrating the transcription activity of TFs and their downstream target genes, an important TFs-target network were constructed and 13 TFs were identified as critical TFs in DHI-mediated protection in H 2 O 2 -induced oxidative stress. By using the integrated approach, seven TFs of these 13 TFs were also identified in melatonin-mediated protection in H 2 O 2 -induced damage. Furthermore, the transcription activity of DNA-(apurinic or apyrimidinic site) lyase (Apex1), Myocyte-specific enhancer factor 2D (Mef2d) and Pre B-cell leukemia transcription factor 3 (Pbx3) was further verified in pluripotent stem cell-derived cardiomyocytes. This research offers a new understanding of cardiomyocytes in response to H 2 O 2 -induced oxidative stress and reveals additional potential therapeutic targets. The combination of two parallel omics datasets (corresponding to the transcriptome and proteome) can reduce the noise in high-throughput data and reveal the fundamental changes of the biological process, making it suitable and reliable for investigation of critical targets in many other complicated pathological processes. Copyright © 2017. Published by Elsevier Inc.

  14. Solid oxide fuel cell (SOFC) systems with integrated reforming or gasification of hydrocarbons; Solid Oxide Fuel Cell (SOFC)-Systeme mit integrierter Reformierung bzw. Vergasung von Kohlenwasserstoffen

    Energy Technology Data Exchange (ETDEWEB)

    Schlitzberger, Christian

    2012-07-01

    In this thesis, innovative concepts for structurally, thermally and materially integrated SOFC-systems with optional CO{sub 2}-capture are developed and analyzed. Initially, options to increase the electrical system-efficiency as coupling of fuel reforming and fuel cell based on the principle of the chemical heat pump and a electrically cascaded stack structure are developed and evaluated regarding e.g. theoretically achievable efficiencies. Based on this evaluation and the state of the art, a new planar stack- and system-design with direct internal reforming and without bipolar plates is systematically constructed. This basic unit can be adopted to different fuel-, operation- and application-requirements and represents a compact system with only few balance-of-plant-components. Due to the thermal and material couplings, the SOFC-waste heat can be directly used to supply the necessary heat for the endothermic reforming process. Additionally, a part of the hot anode off-gas, consisting mainly of water vapor, is recycled as a reforming agent. Therefore, based on the principle of the chemical heat pump, depending on the fuel used, system efficiencies of more than 60% can be achieved, even though the SOFC itself reached only an electrical efficiency of approximately 50%. Because of the cascaded SOFC structure resulting in high fuel utilization, postcombustion of the waste gases is no longer necessary. Due to the fact that SOFC membrane allows only an oxygen-ion flow and thus represents an air separation unit and the SOFC design without the mixing of anode and cathode flows, a simple CO{sub 2}-separation can be realized by condensing the water vapor out of the anode off-gas. In the second part of the thesis mathematical models of the SOFC-system-components are developed and implemented in the C++ based cycle simulation software ENBIPRO (Energie-Bilanz-Programm) owned by the institute. Applying the mathematical models different stack- and system-concepts for several

  15. A real-time respiration position based passive breath gating equipment for gated radiotherapy: A preclinical evaluation

    International Nuclear Information System (INIS)

    Hu Weigang; Xu Anjie; Li Guichao; Zhang Zhen; Housley, Dave; Ye Jinsong

    2012-01-01

    Purpose: To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Methods: Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. Results: PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. Conclusions: A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

  16. Instant Oracle GoldenGate

    CERN Document Server

    Bruzzese, Tony

    2013-01-01

    Filled with practical, step-by-step instructions and clear explanations for the most important and useful tasks. Get the job done and learn as you go. A how-To book with practical recipes accompanied with rich screenshots for easy comprehension.This is a Packt Instant How-to guide, which provides concise and clear recipes for performing the core task of replication using Oracle GoldenGate.The book is aimed at DBAs from any of popular RDBMS systems such as Oracle, SQL Server, Teradata, Sybase, and so on. The level of detail provides quick applicability to beginners and a handy review for more a

  17. Time complexity and gate complexity

    International Nuclear Information System (INIS)

    Koike, Tatsuhiko; Okudaira, Yosuke

    2010-01-01

    We formulate and investigate the simplest version of time-optimal quantum computation theory (TO-QCT), where the computation time is defined by the physical one and the Hamiltonian contains only one- and two-qubit interactions. This version of TO-QCT is also considered as optimality by sub-Riemannian geodesic length. The work has two aims: One is to develop a TO-QCT itself based on a physically natural concept of time, and the other is to pursue the possibility of using TO-QCT as a tool to estimate the complexity in conventional gate-optimal quantum computation theory (GO-QCT). In particular, we investigate to what extent is true the following statement: Time complexity is polynomial in the number of qubits if and only if gate complexity is also. In the analysis, we relate TO-QCT and optimal control theory (OCT) through fidelity-optimal computation theory (FO-QCT); FO-QCT is equivalent to TO-QCT in the limit of unit optimal fidelity, while it is formally similar to OCT. We then develop an efficient numerical scheme for FO-QCT by modifying Krotov's method in OCT, which has a monotonic convergence property. We implemented the scheme and obtained solutions of FO-QCT and of TO-QCT for the quantum Fourier transform and a unitary operator that does not have an apparent symmetry. The former has a polynomial gate complexity and the latter is expected to have an exponential one which is based on the fact that a series of generic unitary operators has an exponential gate complexity. The time complexity for the former is found to be linear in the number of qubits, which is understood naturally by the existence of an upper bound. The time complexity for the latter is exponential in the number of qubits. Thus, both the targets seem to be examples satisfyng the preceding statement. The typical characteristics of the optimal Hamiltonians are symmetry under time reversal and constancy of one-qubit operation, which are mathematically shown to hold in fairly general situations.

  18. Microdroplet-based universal logic gates by electrorheological fluid

    KAUST Repository

    Zhang, Mengying

    2011-01-01

    We demonstrate a uniquely designed microfluid logic gate with universal functionality, which is capable of conducting all 16 logic operations in one chip, with different input voltage combinations. A kind of smart colloid, giant electrorheological (GER) fluid, functions as the translation media among fluidic, electronic and mechanic information, providing us with the capability of performing large integrations either on-chip or off-chip, while the on-chip hybrid circuit is formed by the interconnection of the electric components and fluidic channels, where the individual microdroplets travelling in a channel represents a bit. The universal logic gate reveals the possibilities of achieving a large-scale microfluidic processor with more complexity for on-chip processing for biological, chemical as well as computational experiments. © 2011 The Royal Society of Chemistry.

  19. Design Principles of A Sigma-delta Flux-gate Magnetometer

    Science.gov (United States)

    Magnes, W.; Valavanoglou, A.; Pierce, D.; Frank, A.; Schwingenschuh, K.

    A state-of-the-art flux-gate magnetometer is characterised by magnetic field resolution of several pT in a wide frequency range, low power consumption, low weight and high robustness. Therefore, flux-gate magnetometers are frequently used for ground-based Earth's field observation as well as for measurements aboard scientific space missions. But both traditional analogue and recently developed digital flux-gate magnetometers need low power and high-resolution analogue-to-digital converters for signal quan- tization. The disadvantage of such converters is the low radiation hardness. This fact has led to the idea of combining a traditional analogue flux-gate regulation circuit with that of a discretely realized sigma-delta converter in order to get a radiation hard and further miniaturized magnetometer. The name sigma-delta converter is derived from putting an integrator in front of a 1-bit delta modulator which forms the sigma-delta loop. It is followed by a digital decimation filter realized in a field-programmable gate array (FPGA). The flux-gate regulation and the sigma-delta loop are quite similar in the way of realizing the integrator and feedback circuit, which makes it easy to com- bine these two systems. The presented talk deals with the design principles and the results of a first bread board model.

  20. Pulse-Driven Capacitive Lead Ion Detection with Reduced Graphene Oxide Field-Effect Transistor Integrated with an Analyzing Device for Rapid Water Quality Monitoring.

    Science.gov (United States)

    Maity, Arnab; Sui, Xiaoyu; Tarman, Chad R; Pu, Haihui; Chang, Jingbo; Zhou, Guihua; Ren, Ren; Mao, Shun; Chen, Junhong

    2017-11-22

    Rapid and real-time detection of heavy metals in water with a portable microsystem is a growing demand in the field of environmental monitoring, food safety, and future cyber-physical infrastructure. Here, we report a novel ultrasensitive pulse-driven capacitance-based lead ion sensor using self-assembled graphene oxide (GO) monolayer deposition strategy to recognize the heavy metal ions in water. The overall field-effect transistor (FET) structure consists of a thermally reduced graphene oxide (rGO) channel with a thin layer of Al 2 O 3 passivation as a top gate combined with sputtered gold nanoparticles that link with the glutathione (GSH) probe to attract Pb 2+ ions in water. Using a preprogrammed microcontroller, chemo-capacitance based detection of lead ions has been demonstrated with this FET sensor. With a rapid response (∼1-2 s) and negligible signal drift, a limit of detection (LOD) < 1 ppb and excellent selectivity (with a sensitivity to lead ions 1 order of magnitude higher than that of interfering ions) can be achieved for Pb 2+ measurements. The overall assay time (∼10 s) for background water stabilization followed by lead ion testing and calculation is much shorter than common FET resistance/current measurements (∼minutes) and other conventional methods, such as optical and inductively coupled plasma methods (∼hours). An approximate linear operational range (5-20 ppb) around 15 ppb (the maximum contaminant limit by US Environmental Protection Agency (EPA) for lead in drinking water) makes it especially suitable for drinking water quality monitoring. The validity of the pulse method is confirmed by quantifying Pb 2+ in various real water samples such as tap, lake, and river water with an accuracy ∼75%. This capacitance measurement strategy is promising and can be readily extended to various FET-based sensor devices for other targets.

  1. Experimental analysis of flow of ductile cast iron in stream lined gating systems

    DEFF Research Database (Denmark)

    Skov-Hansen, Søren; Green, Nick; Tiedje, Niels Skat

    2008-01-01

    Streamlined gating systems have been developed for production of high integrity ductile cast iron parts. Flow of ductile cast iron in streamlined gating systems was studied in glass fronted sand moulds where flow in the gating system and casting was recorded by a digital video camera. These results...... are compared with real time x-ray recordings of melt flow. Results show that flow patterns are the same using both techniques. The glass fronted moulds give global information on flow in the whole gating system and casting while the x-ray analysis gives detailed information on specific areas. The experiments...... show how the quality of pouring, design of ingates, design of bends and flow over cores influence melt flow and act to determine the quality of the castings....

  2. Time-delay-and-integration charge coupled devices /CCDs/ applied to the Thematic Mapper. [onboard Landsat

    Science.gov (United States)

    Thompson, L. L.; Mccann, D. H.

    1978-01-01

    The visible focal plane of the Thematic Mapper, the next generation sensor system for application to earth resource survey, uses complex hybrid assembly techniques to interface silicon photodiodes to JFET preamplifiers. This complexity can be ameliorated by the use of a 20-channel time-delay-and-integration (TDI) CCD with nine stages of integration per channel. By going to a CCD array operating in a TDI mode, over 700 individual op amps can be replaced with only 48 op amps. Smooth spectral response and 70% quantum efficiency have been provided by using doped tin oxide gates over the imaging region.

  3. Serializing off-the-shelf MOSFETs by Magnetically Coupling Their Gate Electrodes

    DEFF Research Database (Denmark)

    Dimopoulos, Emmanouil; Munk-Nielsen, Stig

    2013-01-01

    While the semiconductor industry struggles with the inherent trade-offs of solid-state devices, serialization of power switches, like the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) or the Insulated Gate Bipolar Transistor (IGBT), has been proven to be an advantageous alternative...

  4. Modeling and Performance Evaluation of a Top Gated Graphene MOSFET

    Directory of Open Access Journals (Sweden)

    Jith Sarker

    2017-08-01

    Full Text Available In the modernistics years, Graphene has become a promising resplendence in the horizon of fabrication technology, due to some of its unique electronic properties like zero band gap, high saturation velocity, higher electrical conductivity and so on followed by extraordinary thermal, optical and mechanical properties such as- high thermal conductivity, optical transparency, flexibility and thinness. Graphene based devices demand to be deliberated as a possible option for post Si based fabrication technology. In this paper, we have modelled a top gated graphene metal oxide semiconductor field effect transistor (MOSFET. Surface potential dependent Quantum capacitance is obtained self-consistently along with linear and square root approximation model. Gate voltage dependence of surface potential has been analyzed with graphical illustrations and required mathematics as well. Output characteristics, transfer characteristics, transconductance (as a function of gate voltage behavior have been investigated. In the end, effect of channel length on device performance has been justified. Variation of effective mobility and minimum carrier density with respect to channel length has also been observed. Considering all of the graphical illustrations, we do like to conclude that, graphene will be a successor in post silicon era and bring revolutionary changes in the field of fabrication technology.

  5. Boolean gates on actin filaments

    Energy Technology Data Exchange (ETDEWEB)

    Siccardi, Stefano, E-mail: ssiccardi@2ssas.it [The Unconventional Computing Centre, University of the West of England, Bristol (United Kingdom); Tuszynski, Jack A., E-mail: jackt@ualberta.ca [Department of Oncology, University of Alberta, Edmonton, Alberta (Canada); Adamatzky, Andrew, E-mail: andrew.adamatzky@uwe.ac.uk [The Unconventional Computing Centre, University of the West of England, Bristol (United Kingdom)

    2016-01-08

    Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications. - Highlights: • We simulate interaction between voltage pulses using on actin filaments. • We use a coupled nonlinear transmission line model. • We design Boolean logical gates via interactions between the voltage pulses. • We construct one-bit half-adder with interacting voltage pulses.

  6. Two-Input Enzymatic Logic Gates Made Sigmoid by Modifications of the Biocatalytic Reaction Cascades

    Energy Technology Data Exchange (ETDEWEB)

    Zavalov, Oleksandr [Clarkson University, Potsdam, NY; Bocharova, Vera [ORNL; Halamek, Jan [Clarkson University, Potsdam, NY; Halamkova, Lenka [Clarkson University, Potsdam, NY; Korkmaz, Sevim [Clarkson University, Potsdam, NY; Arugula, Mary [University of Utah; Chinnapareddy, Soujanya [Clarkson University, Potsdam, NY; Katz, Evgeny [Clarkson University, Potsdam, NY; Privman, Vladimir [Clarkson University, Potsdam, NY

    2012-01-01

    Computing based on biochemical processes is a newest rapidly developing field of unconventional information and signal processing. In this paper we present results of our research in the field of biochemical computing and summarize the obtained numerical and experimental data for implementations of the standard two-input OR and AND gates with double-sigmoid shape of the output signal. This form of response was obtained as a function of the two inputs in each of the realized biochemical systems. The enzymatic gate processes in the first system were activated with two chemical inputs and resulted in optically detected chromogen oxidation, which happens when either one or both of the inputs are present. In this case, the biochemical system is functioning as the OR gate. We demonstrate that the addition of a filtering biocatalytic process leads to a considerable reduction of the noise transmission factor and the resulting gate response has sigmoid shape in both inputs. The second system was developed for functioning as an AND gate, where the output signal was activated only by a simultaneous action of two enzymatic biomarkers. This response can be used as an indicator of liver damage, but only if both of these of the inputs are present at their elevated, pathophysiological values of concentrations. A kinetic numerical model was developed and used to estimate the range of parameters for which the experimentally realized logic gate is close to optimal. We also analyzed the system to evaluate its noise-handling properties.

  7. Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates

    International Nuclear Information System (INIS)

    Kong Xin; Wei Ke; Liu Guo-Guo; Liu Xin-Yu

    2012-01-01

    Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated. The devices with a gate length of 160 nm and a gate periphery of 2 × 75 μm exhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics, compared with conventional HEMTs. Furthermore, the extrinsic transconductance of an MOSHEMT is 237.2 mS/mm, only 7% lower than that of Schottky-gate HEMT. An extrinsic current gain cutoff frequency f T of 65 GHz and a maximum oscillation frequency f max of 123 GHz are deduced from rf small signal measurements. The high f max demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies. (cross-disciplinary physics and related areas of science and technology)

  8. A gate drive circuit for gate-turn-off (GTO) devices in series stack

    International Nuclear Information System (INIS)

    Despe, O.

    1999-01-01

    A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements

  9. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    Energy Technology Data Exchange (ETDEWEB)

    Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi [The University of Utah, Salt Lake City, Utah 84112 (United States); Encomendero-Risco, Jimy J.; Xing, Huili Grace [University of Notre Dame, Notre Dame, Indiana 46556 (United States); Cornell University, Ithaca, New York 14853 (United States)

    2016-08-08

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  10. Gates Auto Door Car With Lights Modulated

    OpenAIRE

    Lina Carolina; Luyung Dinani, Skom, MMSi

    2002-01-01

    In scientific writing wi ll be explained about automatic gates with modulated headlights, where to find the car lights were adjusted by the relative frequency darker because of this background that the author alleviate human task in performing daily activities by using an automatic gate with the car lights modulated.

  11. Protected gates for topological quantum field theories

    Science.gov (United States)

    Beverland, Michael E.; Buerschaper, Oliver; Koenig, Robert; Pastawski, Fernando; Preskill, John; Sijher, Sumit

    2016-02-01

    We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group.

  12. Protected gates for topological quantum field theories

    Energy Technology Data Exchange (ETDEWEB)

    Beverland, Michael E.; Pastawski, Fernando; Preskill, John [Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125 (United States); Buerschaper, Oliver [Dahlem Center for Complex Quantum Systems, Freie Universität Berlin, 14195 Berlin (Germany); Koenig, Robert [Institute for Advanced Study and Zentrum Mathematik, Technische Universität München, 85748 Garching (Germany); Sijher, Sumit [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2016-02-15

    We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group.

  13. Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

    Science.gov (United States)

    Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

    2018-04-01

    For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

  14. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  15. Multi-gated field emitters for a micro-column

    International Nuclear Information System (INIS)

    Mimura, Hidenori; Kioke, Akifumi; Aoki, Toru; Neo, Yoichiro; Yoshida, Tomoya; Nagao, Masayoshi

    2011-01-01

    We have developed a multi-gated field emitter (FE) such as a quadruple-gated FE with a three-stacked electrode lens and a quintuple-gated FE with a four-stacked electrode lens. Both the FEs can focus the electron beam. However, the quintuple-gated FE has a stronger electron convergence than the quadruple-gated FE, and a beam crossover is clearly observed for the quintuple-gated FE.

  16. Final Report - Phase II - Biogeochemistry of Uranium Under Reducing and Re-oxidizing Conditions: An Integrated Laboratory and Field Study

    Energy Technology Data Exchange (ETDEWEB)

    Peyton, Brent; Sani, Rajesh

    2006-09-28

    Our understanding of subsurface microbiology is hindered by the inaccessibility of this environment, particularly when the hydrogeologic medium is contaminated with toxic substances. Past research in our labs indicated that the composition of the growth medium (e.g., bicarbonate complexation of U(VI)) and the underlying mineral phase (e.g., hematite) significantly affects the rate and extent of U(VI) reduction and immobilization through a variety of effects. Our research was aimed at elucidating those effects to a much greater extent, while exploring the potential for U(IV) reoxidation and subsequent re-mobilization, which also appears to depend on the mineral phases present in the system. The project reported on here was an extension ($20,575) of the prior (much larger) project. This report is focused only on the work completed during the extension period. Further information on the larger impacts of our research, including 28 publications, can be found in the final report for the following projects: 1) Biogeochemistry of Uranium Under Reducing and Re-oxidizing Conditions: An Integrated Laboratory and Field Study Grant # DE-FG03-01ER63270, and 2) Acceptable Endpoints for Metals and Radionuclides: Quantifying the Stability of Uranium and Lead Immobilized Under Sulfate Reducing Conditions Grant # DE-FG03-98ER62630/A001 In this Phase II project, the toxic effects of uranium(VI) were studied using Desulfovibrio desulfuricans G20 in a medium containing bicarbonate or 1, 4-piperazinediethane sulfonic acid disodium salt monohydrate (PIPES) buffer (each at 30 mM, pH 7). The toxicity of uranium(VI) was dependent on the medium buffer and was observed in terms of longer lag times and in some cases, no measurable growth. The minimum inhibiting concentration (MIC) was 140 M U(VI) in PIPES buffered medium. This is 36 times lower than previously reported for D. desulfuricans. These results suggest that U(VI) toxicity and the detoxification mechanisms of G20 depend greatly on the

  17. Implications of modifying membrane fatty acid composition on membrane oxidation, integrity, and storage viability of freeze-dried probiotic, Lactobacillus acidophilus La-5.

    Science.gov (United States)

    Hansen, Marie-Louise R W; Petersen, Mikael A; Risbo, Jens; Hümmer, Magdalena; Clausen, Anders

    2015-01-01

    The aim of this study was to investigate the effect of altering the fatty acid profile of the lipid membrane on storage survival of freeze-dried probiotic, Lactobacillus acidophilus La-5, as well as study the membrane integrity and lipid oxidation. The fatty acid composition of the lipid membrane of L. acidophilus La-5 was significantly different upon growth in MRS (containing Tween 80, an oleic acid source), or in MRS with Tween 20 (containing C12:0 and C14:0), linoleic, or linolenic acid supplemented. Bacteria grown in MRS showed the highest storage survival rates. No indications of loss of membrane integrity could be found, and membrane integrity could therefore not be connected with loss of viability. Survival of bacteria grown with linoleic or linolenic acid was more negatively affected by the presence of oxygen, than bacteria grown in MRS or with Tween 20 supplemented. A small, but significant, loss of linolenic acid during storage could be identified, and an increase of volatile secondary oxidation products during storage was found for bacteria grown in MRS, or with linoleic, or linolenic acid supplemented, but not for bacteria grown with Tween 20. Overall, the results indicate that lipid oxidation and loss of membrane integrity are not the only or most important detrimental reactions which can occur during storage. By altering the fatty acid composition, it was also found that properties of oleic acid gave rise to more robust bacteria than more saturated or unsaturated fatty acids did. © 2015 American Institute of Chemical Engineers.

  18. Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

    International Nuclear Information System (INIS)

    Wan, Chang Jin; Wan, Qing; Zhu, Li Qiang; Wan, Xiang; Shi, Yi

    2016-01-01

    The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors

  19. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    International Nuclear Information System (INIS)

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  20. Coulomb blockade in a Si channel gated by an Al single-electron transistor

    OpenAIRE

    Sun, L.; Brown, K. R.; Kane, B. E.

    2007-01-01

    We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si t...

  1. Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

    Directory of Open Access Journals (Sweden)

    Guoyou Liu

    2015-09-01

    Full Text Available Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+ insulated-gate bipolar transistor (IGBT technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.

  2. Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

    Energy Technology Data Exchange (ETDEWEB)

    Wan, Chang Jin; Wan, Qing, E-mail: wanqing@nju.edu.cn, E-mail: yshi@nju.edu.cn [School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhu, Li Qiang [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wan, Xiang; Shi, Yi, E-mail: wanqing@nju.edu.cn, E-mail: yshi@nju.edu.cn [School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

    2016-01-25

    The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors.

  3. Selective porous gates made from colloidal silica nanoparticles

    Directory of Open Access Journals (Sweden)

    Roberto Nisticò

    2015-11-01

    Full Text Available Highly selective porous films were prepared by spin-coating deposition of colloidal silica nanoparticles on an appropriate macroporous substrate. Silica nanoparticles very homogenous in size were obtained by sol–gel reaction of a metal oxide silica precursor, tetraethyl orthosilicate (TEOS, and using polystyrene-block-poly(ethylene oxide (PS-b-PEO copolymers as soft-templating agents. Nanoparticles synthesis was carried out in a mixed solvent system. After spin-coating onto a macroporous silicon nitride support, silica nanoparticles were calcined under controlled conditions. An organized nanoporous layer was obtained characterized by a depth filter-like structure with internal porosity due to interparticle voids. Permeability and size-selectivity were studied by monitoring the diffusion of probe molecules under standard conditions and under the application of an external stimulus (i.e., electric field. Promising results were obtained, suggesting possible applications of these nanoporous films as selective gates for controlled transport of chemical species in solution.

  4. Polymer-electrolyte-gated nanowire synaptic transistors for neuromorphic applications

    Science.gov (United States)

    Zou, Can; Sun, Jia; Gou, Guangyang; Kong, Ling-An; Qian, Chuan; Dai, Guozhang; Yang, Junliang; Guo, Guang-hua

    2017-09-01

    Polymer-electrolytes are formed by dissolving a salt in polymer instead of water, the conducting mechanism involves the segmental motion-assisted diffusion of ion in the polymer matrix. Here, we report on the fabrication of tin oxide (SnO2) nanowire synaptic transistors using polymer-electrolyte gating. A thin layer of poly(ethylene oxide) and lithium perchlorate (PEO/LiClO4) was deposited on top of the devices, which was used to boost device performances. A voltage spike applied on the in-plane gate attracts ions toward the polymer-electrolyte/SnO2 nanowire interface and the ions are gradually returned after the pulse is removed, which can induce a dynamic excitatory postsynaptic current in the nanowire channel. The SnO2 synaptic transistors exhibit the behavior of short-term plasticity like the paired-pulse facilitation and self-adaptation, which is related to the electric double-effect regulation. In addition, the synaptic logic functions and the logical function transformation are also discussed. Such single SnO2 nanowire-based synaptic transistors are of great importance for future neuromorphic devices.

  5. Subsurface Uranium Fate and Transport: Integrated Experiments and Modeling of Coupled Biogeochemical Mechanisms of Nanocrystalline Uraninite Oxidation by Fe(III)-(hydr)oxides - Project Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Peyton, Brent M. [Montana State Univ., Bozeman, MT (United States); Timothy, Ginn R. [Univ. of California, Davis, CA (United States); Sani, Rajesh K. [South Dakota School of Mines and Technology, Rapid City, SD (United States)

    2013-08-14

    Subsurface bacteria including sulfate reducing bacteria (SRB) reduce soluble U(VI) to insoluble U(IV) with subsequent precipitation of UO2. We have shown that SRB reduce U(VI) to nanometer-sized UO2 particles (1-5 nm) which are both intra- and extracellular, with UO2 inside the cell likely physically shielded from subsequent oxidation processes. We evaluated the UO2 nanoparticles produced by Desulfovibrio desulfuricans G20 under growth and non-growth conditions in the presence of lactate or pyruvate and sulfate, thiosulfate, or fumarate, using ultrafiltration and HR-TEM. Results showed that a significant mass fraction of bioreduced U (35-60%) existed as a mobile phase when the initial concentration of U(VI) was 160 µM. Further experiments with different initial U(VI) concentrations (25 - 900 M) in MTM with PIPES or bicarbonate buffers indicated that aggregation of uraninite depended on the initial concentrations of U(VI) and type of buffer. It is known that under some conditions SRB-mediated UO2 nanocrystals can be reoxidized (and thus remobilized) by Fe(III)-(hydr)oxides, common constituents of soils and sediments. To elucidate the mechanism of UO2 reoxidation by Fe(III) (hydr)oxides, we studied the impact of Fe and U chelating compounds (citrate, NTA, and EDTA) on reoxidation rates. Experiments were conducted in anaerobic batch systems in PIPES buffer. Results showed EDTA significantly accelerated UO2 reoxidation with an initial rate of 9.5 M day-1 for ferrihydrite. In all cases, bicarbonate increased the rate and extent of UO2 reoxidation with ferrihydrite. The highest rate of UO2 reoxidation occurred when the chelator promoted UO2 and Fe(III) (hydr)oxide dissolution as demonstrated with EDTA. When UO2 dissolution did not occur, UO2 reoxidation likely proceeded through an aqueous Fe(III) intermediate as observed for both NTA and

  6. Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

    Science.gov (United States)

    Welte, Stephan; Hacker, Bastian; Daiss, Severin; Ritter, Stephan; Rempe, Gerhard

    2018-02-01

    Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2 μ s . We show an entangling operation between the two atoms by generating a Bell state with 76(2)% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6)% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8)%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

  7. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    Energy Technology Data Exchange (ETDEWEB)

    None

    2011-07-31

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  8. Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

    Directory of Open Access Journals (Sweden)

    Stephan Welte

    2018-02-01

    Full Text Available Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2  μs. We show an entangling operation between the two atoms by generating a Bell state with 76(2% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

  9. Process integration and optimization of a solid oxide fuel cell – Gas turbine hybrid cycle fueled with hydrothermally gasified waste biomass

    International Nuclear Information System (INIS)

    Facchinetti, Emanuele; Gassner, Martin; D’Amelio, Matilde; Marechal, François; Favrat, Daniel

    2012-01-01

    Due to its suitability for using wet biomass, hydrothermal gasification is a promising process for the valorization of otherwise unused waste biomass to synthesis gas and biofuels. Solid oxide fuel cell (SOFC) based hybrid cycles are considered as the best candidate for a more efficient and clean conversion of (bio) fuels. A significant potential for the integration of the two technologies is expected since hydrothermal gasification requires heat at 673–773 K, whereas SOFC is characterized by heat excess at high temperature due to the limited electrochemical fuel conversion. This work presents a systematic process integration and optimization of a SOFC-gas turbine (GT) hybrid cycle fueled with hydrothermally gasified waste biomass. Several design options are systematically developed and compared through a thermodynamic optimization approach based on First Law and exergy analysis. The work demonstrates the considerable potential of the system that allows for converting wet waste biomass into electricity at a First Law efficiency of up to 63%, while simultaneously enabling the separation of biogenic carbon dioxide for further use or sequestration. -- Highlights: ► Hydrothermal gasification is a promising process for the valorization of waste wet biomass. ► Solid Oxide Fuel Cell – Gas Turbine hybrid cycle emerges as the best candidates for conversion of biofuels. ► A systematic process integration and optimization of a SOFC-GT hybrid cycle fuelled with hydrothermally gasified biomass is presented. ► The system may convert wet waste biomass to electricity at a First Law efficiency of 63% while separating the biogenic carbon dioxide. ► The process integration enables to improve the First Law efficiency of around 4% with respect to a non-integrated system.

  10. MOSFET-like CNFET based logic gate library for low-power application: a comparative study

    International Nuclear Information System (INIS)

    Gowri Sankar, P. A.; Udhayakumar, K.

    2014-01-01

    The next generation of logic gate devices are expected to depend upon radically new technologies mainly due to the increasing difficulties and limitations of existing CMOS technology. MOSFET like CNFETs should ideally be the best devices to work with for high-performance VLSI. This paper presents results of a comprehensive comparative study of MOSFET-like carbon nanotube field effect transistors (CNFETs) technology based logic gate library for high-speed, low-power operation than conventional bulk CMOS libraries. It focuses on comparing four promising logic families namely: complementary-CMOS (C-CMOS), transmission gate (TG), complementary pass logic (CPL) and Domino logic (DL) styles are presented. Based on these logic styles, the proposed library of static and dynamic NAND-NOR logic gates, XOR, multiplexer and full adder functions are implemented efficiently and carefully analyzed with a test bench to measure propagation delay and power dissipation as a function of supply voltage. This analysis provides the right choice of logic style for low-power, high-speed applications. Proposed logic gates libraries are simulated using Synopsys HSPICE based on the standard 32 nm CNFET model. The simulation results demonstrate that, it is best to use C-CMOS logic style gates that are implemented in CNFET technology which are superior in performance compared to other logic styles, because of their low average power-delay-product (PDP). The analysis also demonstrates how the optimum supply voltage varies with logic styles in ultra-low power systems. The robustness of the proposed logic gate library is also compared with conventional and state-art of CMOS logic gate libraries. (semiconductor integrated circuits)

  11. Novel Indium Arsenide double gate and gate all around nanowire MOSFETs for diminishing the exchange correlation effect: A quantum study

    Science.gov (United States)

    Orouji, Ali A.; Nejaty, Mohammad; Mohtasham, Alireza

    2014-09-01

    In this paper we present novel double gate (DG) metal oxide semiconductor field effect transistor (MOSFET) and gate all around (GAA) nanowire metal oxide semiconductor field effect transistor (NWT) with a diminished exchange-correlation (Ex-Corr) effect. The key idea in this work is to use Indium Arsenide (InAs) semiconductor instead of Si. We have evaluated and compared different parameters of DG-MOSFET and GAA-NWTs such as threshold voltage, sub-threshold slope, drain induced barrier lowering and ON and OFF state currents from quantum view. Quantum mechanical transport approach based on non-equilibrium green's function (NEGF) has been performed in the frame work of effective mass theory in consideration with Ex-Corr effect. This simulation method consists of three dimensional Poisson's equation in which a Schrodinger equation is first solved in each slice of the device to find Eigen energies and Eigen functions. Then, a transport equation of electrons moving in the sub-bands is solved. This fully quantum method treats such effects as source-to-drain tunneling, ballistic transport, and quantum confinement on equal footing. The results show that only a few lowest Eigen sub-bands are occupied and the upper sub-bands can be safely neglected. Also, the interaction between electrons and Ex-Corr effect is diminished in the proposed structure.

  12. Field programmable gate array based data digitisation with commercial elements

    Science.gov (United States)

    Ugur, C.; Koening, W.; Michel, J.; Palka, M.; Traxler, M.

    2013-01-01

    One of the most important aspects of particle identification experiments is the digitisation of time, amplitude and charge data from detectors. These conversions are mostly undertaken with Application Specific Integrated Circuits (ASICs). However, recent developments in Field Programmable Gate Array (FPGA) technology allow us to use commercial electronic components for the required Front-End Electronics (FEE) and to do the digitisation in the FPGA. It is possible to do Time-of-Flight (ToF), Time-over-Threshold (ToT), amplitude and charge measurements with converters implemented in FPGA. We call this principle come & kiss: use COmplex ComMErcial Elements & Keep It Small and Simple.

  13. Calibration of submerged multi-sluice gates

    Directory of Open Access Journals (Sweden)

    Mohamed F. Sauida

    2014-09-01

    The main objective of this work is to study experimentally and verify empirically the different parameters affecting the discharge through submerged multiple sluice gates (i.e., the expansion ratios, gates operational management, etc.. Using multiple regression analysis of the experimental results, a general equation for discharge coefficient is developed. The results show, that the increase in the expansion ratio and the asymmetric operation of gates, give higher values for the discharge coefficient. The obtained predictions of the discharge coefficient using the developed equations are compared to the experimental data. The present developed equations showed good consistency and high accuracy.

  14. A class of quantum gate entanglers

    International Nuclear Information System (INIS)

    Heydari, Hoshang

    2010-01-01

    We construct quantum gate entanglers for different classes of multipartite states based on the definition of W and GHZ concurrence classes. First, we review the basic construction of concurrence classes based on the orthogonal complement of a positive operator valued measure (POVM) on quantum phase. Then, we construct quantum gate entanglers for different classes of multi-qubit states. In particular, we show that these operators can entangle multipartite states if they satisfy some conditions for W and GHZ classes of states. Finally, we explicitly give the W class and GHZ classes of quantum gate entanglers for four-qubit states.

  15. Resonantly driven CNOT gate for electron spins

    Science.gov (United States)

    Zajac, D. M.; Sigillito, A. J.; Russ, M.; Borjans, F.; Taylor, J. M.; Burkard, G.; Petta, J. R.

    2018-01-01

    To build a universal quantum computer—the kind that can handle any computational task you throw at it—an essential early step is to demonstrate the so-called CNOT gate, which acts on two qubits. Zajac et al. built an efficient CNOT gate by using electron spin qubits in silicon quantum dots, an implementation that is especially appealing because of its compatibility with existing semiconductor-based electronics (see the Perspective by Schreiber and Bluhm). To showcase the potential, the authors used the gate to create an entangled quantum state called the Bell state.

  16. Stay vane and wicket gate relationship study

    Energy Technology Data Exchange (ETDEWEB)

    None, None

    2005-01-19

    This report evaluates potential environmental and performance gains that can be achieved in a Kaplan turbine through non-structural modifications to stay vane and wicket gate assemblies. This summary is based primarily on data and conclusions drawn from models and studies of Lower Granite Dam. Based on this investigation, the study recommends (1) a proof of concept at Lower Granite Dam to establish predicted improvements for the existing turbine and to further refine the stay vane wicket gate designs for fish passage; and (2) consideration of the stay vane wicket gate systems in any future turbine rehabilitation studies.

  17. Gate A: changes to opening hours

    CERN Multimedia

    2015-01-01

    Due to maintenance work, the opening hours of Gate A (near Reception) will be modified between Monday, 13 and Friday, 17 April 2015.   During this period, the gate will be open to vehicles between 7 a.m. and 9.30 a.m., then between 4.30 p.m. and 7 p.m. It will be completely closed to traffic between 9.30 a.m. and 4.30 p.m. Pedestrians and cyclists may continue to use the gate. We apologise for any inconvenience and thank you for your understanding.

  18. Getting started with FortiGate

    CERN Document Server

    Fabbri, Rosato

    2013-01-01

    This book is a step-by-step tutorial that will teach you everything you need to know about the deployment and management of FortiGate, including high availability, complex routing, various kinds of VPN working, user authentication, security rules and controls on applications, and mail and Internet access.This book is intended for network administrators, security managers, and IT pros. It is a great starting point if you have to administer or configure a FortiGate unit, especially if you have no previous experience. For people that have never managed a FortiGate unit, the book helpfully walks t

  19. Hot-Fire Test Results of an Oxygen/RP-2 Multi-Element Oxidizer-Rich Staged-Combustion Integrated Test Article

    Science.gov (United States)

    Hulka, J. R.; Protz, C. S.; Garcia, C. P.; Casiano, M. J.; Parton, J. A.

    2016-01-01

    As part of the Combustion Stability Tool Development project funded by the Air Force Space and Missile Systems Center, the NASA Marshall Space Flight Center was contracted to assemble and hot-fire test a multi-element integrated test article demonstrating combustion characteristics of an oxygen/hydrocarbon propellant oxidizer-rich staged-combustion engine thrust chamber. Such a test article simulates flow through the main injectors of oxygen/kerosene oxidizer-rich staged combustion engines such as the Russian RD-180 or NK-33 engines, or future U.S.-built engine systems such as the Aerojet-Rocketdyne AR-1 engine or the Hydrocarbon Boost program demonstration engine. For the thrust chamber assembly of the test article, several configurations of new main injectors, using relatively conventional gas-centered swirl coaxial injector elements, were designed and fabricated. The design and fabrication of these main injectors are described in a companion paper at this JANNAF meeting. New ablative combustion chambers were fabricated based on hardware previously used at NASA for testing at similar size and pressure. An existing oxygen/RP-1 oxidizer-rich subscale preburner injector from a previous NASA-funded program, along with existing and new inter-connecting hot gas duct hardware, were used to supply the oxidizer-rich combustion products to the oxidizer circuit of the main injector of the thrust chamber. Results from independent hot-fire tests of the preburner injector in a combustion chamber with a sonic throat are described in companion papers at this JANNAF conference. The resulting integrated test article - which includes the preburner, inter-connecting hot gas duct, main injector, and ablative combustion chamber - was assembled at Test Stand 116 at the East Test Area of the NASA Marshall Space Flight Center. The test article was well instrumented with static and dynamic pressure, temperature, and acceleration sensors to allow the collected data to be used for

  20. Comparison of LDD and double-gate MOSFET for nanoscale devices

    Science.gov (United States)

    Ko, Suk-woong; Kim, Jae-hong; Jung, Hak-kee

    2002-11-01

    In short channel MOSFETs (metal oxide semiconductor field effect transistors), the effective channel length can be substantially shortened, leading to a slope in the saturated I-V characteristic that is analogous to the Early effect for BJT. These SCE(short channel effect) problems have been solved using the LDD(lightly doped drain) structure, but can't be completely solved at nano scale gate. To complete weakness of LDD, we have designed the MOSFET which has the DG(double gate) structure. For comparing LDD with DG MOSFETs, we have used the TCAD simulator. The structures of LDD and DG MOSFETs have been designed and simulated by the DIOS tool and the electrical characteristics simulated by the DESSIS tool in TCAD. The I-V characteristic is not good in LDD but it is very excellent in DG MOSFET of sub-50nm gate.