WorldWideScience

Sample records for gate metal layer

  1. Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

    International Nuclear Information System (INIS)

    Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

    2004-01-01

    We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

  2. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    Energy Technology Data Exchange (ETDEWEB)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  3. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-03-09

    It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.

  4. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  5. Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jun Beom; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si 712-749 (Korea, Republic of); Han, Won Seok [UP Chemical 576, Chilgoedong, Pyeongtaek-si, Gyeonggi-do 459-050 (Korea, Republic of); Lee, Do-Joong [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2016-07-15

    Tungsten carbides (WC{sub x}) thin films were deposited on thermally grown SiO{sub 2} substrates by atomic layer deposition (ALD) using a fluorine- and nitrogen-free W metallorganic precursor, tungsten tris(3-hexyne) carbonyl [W(CO)(CH{sub 3}CH{sub 2}C ≡ CCH{sub 2}CH{sub 3}){sub 3}], and N{sub 2} + H{sub 2} plasma as the reactant at deposition temperatures between 150 and 350 °C. The present ALD-WC{sub x} system showed an ALD temperature window between 200 and 250 °C, where the growth rate was independent of the deposition temperature. Typical ALD characteristics, such as self-limited film growth and a linear dependency of the film grown on the number of ALD cycles, were observed, with a growth rate of 0.052 nm/cycle at a deposition temperature of 250 °C. The ALD-WC{sub x} films formed a nanocrystalline structure with grains, ∼2 nm in size, which consisted of hexagonal W{sub 2}C, WC, and nonstoichiometric cubic β-WC{sub 1−x} phase. Under typical deposition conditions at 250 °C, an ALD-WC{sub x} film with a resistivity of ∼510 μΩ cm was deposited and the resistivity of the ALD-WC{sub x} film could be reduced even further to ∼285 μΩ cm by further optimizing the reactant pulsing conditions, such as the plasma power. The step coverage of ALD-WC{sub x} film was ∼80% on very small sized and dual trenched structures (bottom width of 15 nm and aspect ratio of ∼6.3). From ultraviolet photoelectron spectroscopy, the work function of the ALD-WC{sub x} film was determined to be 4.63 eV. Finally, the ultrathin (∼5 nm) ALD-WC{sub x} film blocked the diffusion of Cu, even up to 600 °C, which makes it a promising a diffusion barrier material for Cu interconnects.

  6. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  7. Chemical gating of epitaxial graphene through ultrathin oxide layers.

    Science.gov (United States)

    Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

    2015-08-07

    We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.

  8. Cleaning Challenges of High-κ/Metal Gate Structures

    KAUST Repository

    Hussain, Muhammad Mustafa; Shamiryan, Denis G.; Paraschiv, Vasile; Sano, Kenichi; Reinhardt, Karen A.

    2010-01-01

    High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.

  9. Cleaning Challenges of High-κ/Metal Gate Structures

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-12-20

    High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.

  10. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.

    2010-11-19

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  11. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.; Caraveo-Frescas, J. A.; Cha, D. K.

    2010-01-01

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  12. Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air

    Science.gov (United States)

    Suria, Ateeq J.; Yalamarthy, Ananth Saran; Heuser, Thomas A.; Bruefach, Alexandra; Chapin, Caitlin A.; So, Hongyun; Senesky, Debbie G.

    2017-06-01

    In this paper, we describe the use of 50 nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 °C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10 nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50 nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (Ids-Vds) and gate leakage (Ig,leakage) characteristics up to 600 °C. Both, the 10 nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 °C, as evidenced by a sudden increase of approximately 50 times and 5.3 × 106 times in Ig,leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor.

  13. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

    International Nuclear Information System (INIS)

    Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2016-01-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

  14. Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

    International Nuclear Information System (INIS)

    Nakayama, Hiroyasu; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Saitoh, Eiji; Ye, Jianting; Iwasa, Yoshihiro

    2012-01-01

    Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25) MV cm -1 of electric field by applying only 1.7 V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems. (author)

  15. Simulation of dual-gate SOI MOSFET with different dielectric layers

    Science.gov (United States)

    Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

    2016-04-01

    The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

  16. Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer

    NARCIS (Netherlands)

    Nakayama, Hiroyasu; Ye, Jianting; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Iwasa, Yoshihiro; Saitoh, Eiji

    Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with

  17. Ultra-fine metal gate operated graphene optical intensity modulator

    Science.gov (United States)

    Kou, Rai; Hori, Yosuke; Tsuchizawa, Tai; Warabi, Kaori; Kobayashi, Yuzuki; Harada, Yuichi; Hibino, Hiroki; Yamamoto, Tsuyoshi; Nakajima, Hirochika; Yamada, Koji

    2016-12-01

    A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al2O3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.

  18. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    Science.gov (United States)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  19. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices.

    Science.gov (United States)

    Black, Jennifer M; Come, Jeremy; Bi, Sheng; Zhu, Mengyang; Zhao, Wei; Wong, Anthony T; Noh, Joo Hyon; Pudasaini, Pushpa R; Zhang, Pengfei; Okatan, Mahmut Baris; Dai, Sheng; Kalinin, Sergei V; Rack, Philip D; Ward, Thomas Zac; Feng, Guang; Balke, Nina

    2017-11-22

    Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

  20. Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

    Science.gov (United States)

    Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

    2017-01-01

    Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

  1. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-03-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  2. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa; Smith, Casey Eben; Harris, Harlan Rusty; Young, Chadwin; Tseng, Hsinghuang; Jammy, Rajarao

    2010-01-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  3. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    Science.gov (United States)

    An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

    2016-11-01

    Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

  4. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    International Nuclear Information System (INIS)

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  5. Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Wenzhuo [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Wang, Lei [Department of Electrical Engineering, Columbia University, New York NY 10027 USA; Yu, Ruomeng [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Liu, Yuanyue [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Wei, Su-Huai [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Hone, James [Department of Mechanical Engineering, Columbia University, New York NY 10027 USA; Wang, Zhong Lin [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083 Beijing China

    2016-08-03

    Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

  6. Analysis of chemical bond states and electrical properties of stacked AlON/HfO{sub 2} gate oxides formed by using a layer-by-layer technique

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wonjoon; Lee, Jonghyun; Yang, Jungyup; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh; Byun, Byungsub; Kim, Moseok [Hanyang University, Seoul (Korea, Republic of)

    2006-06-15

    Stacked AlON/HfO{sub 2} thin films for gate oxides in metal-oxide-semiconductor devices are successfully prepared on Si substrates by utilizing a layer-by-layer technique integrated with an off-axis RF remote plasma sputtering process at room temperature. This off-axis structure is designed to improve the uniformity and the quality of gate oxide films. Also, a layer-by-layer technique is used to control the interface layer between the gate oxide and the Si substrate. The electrical properties of our stacked films are characterized by using capacitance versus voltage and leakage current versus voltage measurements. The stacked AlON/HfO{sub 2} gate oxide exhibits a low leakage current of about 10{sup -6} A/cm{sup 2} and a high dielectric constant value of 14.26 by effectively suppressing the interface layer between gate oxide and Si substrate. In addition, the chemical bond states and the optimum thickness of each AlON and HfO{sub 2} thin film are analyzed using X-ray photoemission spectroscopy and transmission electron microscopy measurement.

  7. SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2009-12-01

    Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

  8. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Saidi, B. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Veillerot, M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Caubet, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Fabbri, J-M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Piallat, F. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Gassilloud, R. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Schamm-Chardon, S. [CEMES-CNRS et Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)

    2015-08-15

    Highlights: • The backside approach is a promising solution for advanced chemical characterization of future MOSFETs. • Frontside ToF-SIMS and Auger depth profiles are affected by cumulative mixing effects and thus not relevant for analyzing ultra-thin layers. • Higher in-depth resolution is possible in the backside approach for Auger and ToF-SIMS depth profiling. • Backside depth profiling allows revealing ultra-thin layers and elemental in-depth redistribution inside high-k/metal gate stacks. • Backside XPS allows preserving the full metal gate, thus enabling the analysis of real technological samples. - Abstract: Downscaling of transistors beyond the 14 nm technological node requires the implementation of new architectures and materials. Advanced characterization methods are needed to gain information about the chemical composition of buried layers and interfaces. An effective approach based on backside analysis is presented here. X-ray photoelectron spectroscopy, Auger depth profiling and time-of-flight secondary ions mass spectrometry are combined to investigate inter-diffusion phenomena. To highlight improvements related to the backside method, backside and frontside analyses are compared. Critical information regarding nitrogen, oxygen and aluminium redistribution inside the gate stacks is obtained only in the backside configuration.

  9. A refractory metal gate approach for micronic CMOS technology

    International Nuclear Information System (INIS)

    Lubowiecki, V.; Ledys, J.L.; Plossu, C.; Balland, B.

    1987-01-01

    In the future, devices scaling down, integration density and performance improvements are going to bring a number of conventional circuit design and process techniques to their fundamental limits. To avoid any severe limitations in MOS ULSI (Ultra Large Scale Integration) technologies, interconnection materials and schemes are required to emerge, in order to face the Megabits memory field. Among those, the gate approach will obviously take a keyrole, when the operating speed of ULSI chips will reach the practical upper limits imposed by parasitic resistances and capacitances which stem from the circuit interconnect wiring. Even if fairly suitable for MOS process, doped polycrystalline silicon is being gradually replaced by refractory metal silicide or polycide structures, which match better with low resistivity requirements. However, as we approach the submicronic IC's, higher conductivity materials will be paid more and more attention. Recently, works have been devoted and published on refractory metal gate technologies. Molybdenum or tungsten, deposited either by CVD or PVD methods, are currently reported even if some drawbacks in their process integration still remain. This paper is willing to present such an approach based on tungsten (more reliable than Molybdenum deposited by LPCVD (giving more conductive and more stable films than PVD). Deposition process will be first described. Then CMOS process flow will allow us to focus on specific refractory metal gate issues. Finally, electrical and physical properties will be assessed, which will demonstrate the feasibility of such a technology as well as the compatibility of the tungsten with most of the usual techniques

  10. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  11. Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor

    International Nuclear Information System (INIS)

    Afifah Maheran A H; Menon P S; Shaari, S; Elgomati, H A; Salehuddin, F; Ahmad, I

    2013-01-01

    In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO 2 ), while the metal gate is Tungsten Silicide (WSi x ). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (V th ). The objective of this experiment is to minimize the variance of V th where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of V th . The results show that the V th values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

  12. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  13. Superconductivity in Layered Organic Metals

    Directory of Open Access Journals (Sweden)

    Jochen Wosnitza

    2012-04-01

    Full Text Available In this short review, I will give an overview on the current understanding of the superconductivity in quasi-two-dimensional organic metals. Thereby, I will focus on charge-transfer salts based on bis(ethylenedithiotetrathiafulvalene (BEDT-TTF or ET for short. In these materials, strong electronic correlations are clearly evident, resulting in unique phase diagrams. The layered crystallographic structure leads to highly anisotropic electronic as well as superconducting properties. The corresponding very high orbital critical field for in-plane magnetic-field alignment allows for the occurrence of the Fulde–Ferrell– Larkin–Ovchinnikov state as evidenced by thermodynamic measurements. The experimental picture on the nature of the superconducting state is still controversial with evidence both for unconventional as well as for BCS-like superconductivity.

  14. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kawarada, Hiroshi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2016-07-18

    The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

  15. Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

    Science.gov (United States)

    Jaskólski, W.; Pelc, M.; Bryant, Garnett W.; Chico, Leonor; Ayuela, A.

    2018-04-01

    Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.

  16. Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

    International Nuclear Information System (INIS)

    Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

    2009-01-01

    An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

  17. Effects of a metallic front gate on the temperature-dependent electronic property of pentacene films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw [Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China); Tsao, Hou-Yen [Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China); Liu, Day-Shan [Graduate Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 632, Taiwan (China)

    2014-11-14

    The effect of a metallic front gate on the temperature-dependent electronic property of pentacene films was investigated in this study. The carrier mobility exhibits strong temperature dependence, implying the dominance of tunneling (hopping) at low (high) temperatures. The room-temperature mobility was drastically increased by capping an In (Au) layer on the pentacene front surface. However, the carrier concentration is not affected. An increase in the phonon energy occurs for In-capped or Au-capped pentacene samples, which corresponds to the abrupt transition to the nonlocal electron–phonon coupling. The enhanced mobility by capping a metal layer is attributed to a change in the electron–phonon coupling. - Highlights: • For the metal-capped and uncapped pentacene films, the mobility was researched. • The mobility was dramatically increased by capping an In (Au) layer. • The induced strain by capping a metal layer is found. • The strain may lead to the electron–phonon coupling variation. • The enhanced mobility is attributed to the weakened electron–phonon coupling.

  18. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    Paul C. McIntyre

    2012-07-01

    Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  19. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    Directory of Open Access Journals (Sweden)

    Z N Khan

    Full Text Available Metal Oxide Semiconductor (MOS capacitors (MOSCAP have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer, time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.

  20. Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

    2010-05-31

    The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

  1. Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology

    Science.gov (United States)

    Kim, Young-Hee

    Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO 2 gate dielectrics has reached its physical limit, direct tunneling resulting from scaling down of dielectrics thickness. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, lots of candidate materials have been evaluated and Hf-based high-k dielectrics were chosen to the promising materials for gate dielectrics. However, lots of issues were identified and more thorough researches were carried out on Hf-based high-k dielectrics. For instances, mobility degradation, charge trapping, crystallization, Fermi level pinning, interface engineering, and reliability studies. In this research, reliability study of HfO2 were explored with poly gate and dual metal (Ru-Ta alloy, Ru) gate electrode as well as interface engineering. Hard breakdown and soft breakdown were compared and Weibull slope of soft breakdown was smaller than that of hard breakdown, which led to a potential high-k scaling issue. Dynamic reliability has been studied and the combination of trapping and detrapping contributed the enhancement of lifetime projection. Polarity dependence was shown that substrate injection might reduce lifetime projection as well as it increased soft breakdown behavior. Interface tunneling mechanism was suggested with dual metal gate technology. Soft breakdown (l st breakdown) was mainly due to one layer breakdown of bi-layer structure. Low weibull slope was in part attributed to low barrier height of HfO 2 compared to interface layer. Interface layer engineering was thoroughly studied in terms of mobility, swing, and short channel effect using deep sub-micron MOSFET devices. In fact, Hf-based high-k dielectrics could be scaled down to below EOT of ˜10A and it successfully achieved the competitive performance goals. However, it is

  2. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    Science.gov (United States)

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-06-09

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  3. Optimum source/drain overlap design for 16 nm high-k/metal gate MOSFETs

    International Nuclear Information System (INIS)

    Jang, Junyong; Lim, Towoo; Kim, Youngmin

    2009-01-01

    We explore a source/drain (S/D) design for a 16 nm MOSFET utilizing a replacement process for a high-k gate dielectric and metal gate electrode integration. Using TCAD simulation, a trade-off study between series resistance and overlap capacitance is carried out for a high-k dielectric surrounding gate structure, which results from the replacement process. An optimum S/D overlap to gate for the high-k surrounding gate structure is found to be different from the conventional gate structure, i.e. 0∼1 nm underlap is preferred for the surround high-k gate structure while 1∼2 nm overlap for the conventional gate one

  4. Progress in MOSFET double-layer metalization

    Science.gov (United States)

    Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

    1980-01-01

    Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

  5. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  6. Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

    Science.gov (United States)

    Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

    2015-06-01

    High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

  7. Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2017-08-04

    Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93% transparency in most of the visible range of the electromagnetic spectrum. Thin-film transistors fabricated with SnO2 gates show excellent transistor properties including saturation mobility of 15.3 cm2 V−1 s−1, a low subthreshold swing of ≈130 mV dec−1, a high on/off ratio of ≈109, and an excellent electrical stability under constant-voltage stressing conditions to the gate terminal. Moreover, the SnO2-gated thin-film transistors show excellent electrical characteristics when used in electronic circuits such as negative channel metal oxide semiconductor (NMOS) inverters and ring oscillators. The NMOS inverters exhibit a low propagation stage delay of ≈150 ns with high DC voltage gain of ≈382. A high oscillation frequency of ≈303 kHz is obtained from the output sinusoidal signal of the 11-stage NMOS inverter-based ring oscillators. These results show that SnO2 can effectively replace ITO in transparent electronics and sensor applications.

  8. Nonlinear optical properties of ultrathin metal layers

    DEFF Research Database (Denmark)

    Lysenko, Oleg

    2016-01-01

    This thesis presents experimental and theoretical studies of nonlinear propagation of ultrashort long-range surface plasmon polaritons in gold strip waveguides. The strip plasmonic waveguides are fabricated in house, and contain a gold layer, adhesion layers, and silicon dioxide cladding. The opt......This thesis presents experimental and theoretical studies of nonlinear propagation of ultrashort long-range surface plasmon polaritons in gold strip waveguides. The strip plasmonic waveguides are fabricated in house, and contain a gold layer, adhesion layers, and silicon dioxide cladding......-order nonlinear susceptibility of the plasmonic mode in the gold strip waveguides significantly depends on the metal layer thickness and laser pulse duration. This dependence is explained in detail in terms of the free-electron temporal dynamics in gold. The third-order nonlinear susceptibility of the gold layer...

  9. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

    International Nuclear Information System (INIS)

    Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

    2014-01-01

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe 2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe 2 –Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials

  10. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

    Science.gov (United States)

    Renteria, J.; Samnakay, R.; Jiang, C.; Pope, T. R.; Goli, P.; Yan, Z.; Wickramaratne, D.; Salguero, T. T.; Khitun, A. G.; Lake, R. K.; Balandin, A. A.

    2014-01-01

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  11. All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

    Energy Technology Data Exchange (ETDEWEB)

    Renteria, J.; Jiang, C.; Yan, Z. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Samnakay, R.; Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Salguero, T. T. [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Wickramaratne, D.; Lake, R. K. [Laboratory for Terascale and Terahertz Electronics, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Khitun, A. G. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States)

    2014-01-21

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  12. Optimization of multi-layered metallic shield

    International Nuclear Information System (INIS)

    Ben-Dor, G.; Dubinsky, A.; Elperin, T.

    2011-01-01

    Research highlights: → We investigated the problem of optimization of a multi-layered metallic shield. → The maximum ballistic limit velocity is a criterion of optimization. → The sequence of materials and the thicknesses of layers in the shield are varied. → The general problem is reduced to the problem of Geometric Programming. → Analytical solutions are obtained for two- and three-layered shields. - Abstract: We investigate the problem of optimization of multi-layered metallic shield whereby the goal is to determine the sequence of materials and the thicknesses of the layers that provide the maximum ballistic limit velocity of the shield. Optimization is performed under the following constraints: fixed areal density of the shield, the upper bound on the total thickness of the shield and the bounds on the thicknesses of the plates manufactured from every material. The problem is reduced to the problem of Geometric Programming which can be solved numerically using known methods. For the most interesting in practice cases of two-layered and three-layered shields the solution is obtained in the explicit analytical form.

  13. Dry etching of MgCaO gate dielectric and passivation layers on GaN

    International Nuclear Information System (INIS)

    Hlad, M.; Voss, L.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Ren, F.

    2006-01-01

    MgCaO films grown by rf plasma-assisted molecular beam epitaxy and capped with Sc 2 O 3 are promising candidates as surface passivation layers and gate dielectrics on GaN-based high electron mobility transistors (HEMTs) and metal-oxide semiconductor HEMTs (MOS-HEMTs), respectively. Two different plasma chemistries were examined for etching these thin films on GaN. Inductively coupled plasmas of CH 4 /H 2 /Ar produced etch rates only in the range 20-70 A/min, comparable to the Ar sputter rates under the same conditions. Similarly slow MgCaO etch rates (∼100 A/min) were obtained with Cl 2 /Ar discharges under the same conditions, but GaN showed rates almost an order of magnitude higher. The MgCaO removal rates are limited by the low volatilities of the respective etch products. The CH 4 /H 2 /Ar plasma chemistry produced a selectivity of around 2 for etching the MgCaO with respect to GaN

  14. ANTIREFLECTION MULTILAYER COATINGS WITH THIN METAL LAYERS

    Directory of Open Access Journals (Sweden)

    L. A. Gubanova

    2016-03-01

    Full Text Available The design of anti-reflective coatings for metal surfaces of Al, Ti, N,i Cr is proposed. The coatings have the form of alternating layers of dielectric/metal/dielectric with the number of cells up to15. The method of calculation of such coatings is proposed. We have calculated the coatings of the type [HfO2/Cr/HfO2]15, [ZrO2/Ti/Al2O3]15, [ZrO2/Cr/ZrO2]15. It is shown that the proposed interference coatings provide reduction of the residual reflectance of the metal several times (from 3.5 to 6.0 in a wide spectral range (300-1000 nm. The proposed coatings can be recommended as anti-reflective coatings for energy saving solar systems and batteries, and photovoltaic cells.

  15. Fabrication and independent control of patterned polymer gate for a few-layer WSe{sub 2} field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Sung Ju; Park, Min; Kang, Hojin; Park, Yung Woo, E-mail: ywpark@snu.ac.kr [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Lee, Minwoo; Jeong, Dae Hong [Department of Chemistry Education, Seoul National University, Seoul 151-742 (Korea, Republic of)

    2016-08-15

    We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D) semiconductor, few-layer tungsten diselenide (WSe{sub 2}) field-effect transistor (FET). We expose an electron-beam in a desirable region to form the patterned structure. The WSe{sub 2} FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS{sub 2}) FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibility in transition metal dichalcogenide (TMD)-based electronics.

  16. Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

    International Nuclear Information System (INIS)

    Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

    2009-01-01

    This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

  17. Maximizing the value of gate capacitance in field-effect devices using an organic interface layer

    Science.gov (United States)

    Kwok, H. L.

    2015-12-01

    Past research has confirmed the existence of negative capacitance in organics such as tris (8-Hydroxyquinoline) Aluminum (Alq3). This work explored using such an organic interface layer to enhance the channel voltage in the field-effect transistor (FET) thereby lowering the sub-threshold swing. In particular, if the values of the positive and negative gate capacitances are approximately equal, the composite negative capacitance will increase by orders of magnitude. One concern is the upper frequency limit (∼100 Hz) over which negative capacitance has been observed. Nonetheless, this frequency limit can be raised to kHz when the organic layer is subjected to a DC bias.

  18. Respiration Gates Sensory Input Responses in the Mitral Cell Layer of the Olfactory Bulb

    Science.gov (United States)

    Short, Shaina M.; Morse, Thomas M.; McTavish, Thomas S.; Shepherd, Gordon M.; Verhagen, Justus V.

    2016-01-01

    Respiration plays an essential role in odor processing. Even in the absence of odors, oscillating excitatory and inhibitory activity in the olfactory bulb synchronizes with respiration, commonly resulting in a burst of action potentials in mammalian mitral/tufted cells (MTCs) during the transition from inhalation to exhalation. This excitation is followed by inhibition that quiets MTC activity in both the glomerular and granule cell layers. Odor processing is hypothesized to be modulated by and may even rely on respiration-mediated activity, yet exactly how respiration influences sensory processing by MTCs is still not well understood. By using optogenetics to stimulate discrete sensory inputs in vivo, it was possible to temporally vary the stimulus to occur at unique phases of each respiration. Single unit recordings obtained from the mitral cell layer were used to map spatiotemporal patterns of glomerular evoked responses that were unique to stimulations occurring during periods of inhalation or exhalation. Sensory evoked activity in MTCs was gated to periods outside phasic respiratory mediated firing, causing net shifts in MTC activity across the cycle. In contrast, odor evoked inhibitory responses appear to be permitted throughout the respiratory cycle. Computational models were used to further explore mechanisms of inhibition that can be activated by respiratory activity and influence MTC responses. In silico results indicate that both periglomerular and granule cell inhibition can be activated by respiration to internally gate sensory responses in the olfactory bulb. Both the respiration rate and strength of lateral connectivity influenced inhibitory mechanisms that gate sensory evoked responses. PMID:28005923

  19. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  20. Work Function Tuning in Sub-20nm Titanium Nitride (TiN) Metal Gate: Mechanism and Engineering

    KAUST Repository

    Hasan, Mehdi

    2011-07-01

    Scaling of transistors (the building blocks of modern information age) provides faster computation at the expense of excessive power dissipation. Thus to address these challenges, high-k/metal gate stack has been introduced in commercially available microprocessors from 2007. Since then titanium nitride (TiN) metal gate’s work function (Wf) tunability with its thickness (thickness increases, work function increases) is a well known phenomenon. Many hypotheses have been made over the years which include but not limited to: trap charge and metal gate nucleation, nitrogen concentration, microstructure agglomeration and global stress, metal oxide formation, and interfacial oxide thickness. However, clear contradictions exist in these assumptions. Also, nearly all these reports skipped a comprehensive approach to explain this complex paradigm. Therefore, in this work we first show a comprehensive physical investigation using transmission electron microcopy/electron energy loss spectroscopy (TEM/EELS), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) to show replacement of oxygen by nitrogen in the metal/dielectric interface, formation of TiONx, reduction of Ti/N concentration and grain size increment happen with TiN thickness increment and thus may increase the work function. Then, using these finding, we experimentally show 100meV of work function modulation in 10nm TiN Metal-oxide-semiconductor capacitor by using low temperature oxygen annealing. A low thermal budget flow (replicating gate-last) shows similar work function boost up. Also, a work function modulation of 250meV has been possible using oxygen annealing and applying no thermal budget. On the other hand, etch-back of TiN layer can decrease the work function. Thus this study quantifies role of various factors in TiN work function tuning; it also reproduces the thickness varied TiN work function modulation in single thickness TiN thus reducing the

  1. Polysulfide intercalated layered double hydroxides for metal capture applications

    Energy Technology Data Exchange (ETDEWEB)

    Kanatzidis, Mercouri G.; Ma, Shulan

    2017-04-04

    Polysulfide intercalated layered double hydroxides and methods for their use in vapor and liquid-phase metal capture applications are provided. The layered double hydroxides comprise a plurality of positively charged host layers of mixed metal hydroxides separated by interlayer spaces. Polysulfide anions are intercalated in the interlayer spaces.

  2. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  3. Impact of metal-ion contaminated silica particles on gate oxide integrity

    NARCIS (Netherlands)

    Rink, Ingrid; Wali, F.; Knotter, D.M.

    2009-01-01

    The impact of metal-ion contamination (present on wafer surface before oxidation) on gate oxide integrity (GOI) is well known in literature, which is not the case for clean silica particles [1, 2]. However, it is known that particles present in ultra-pure water (UPW) decrease the random yield in

  4. Channel length scaling and the impact of metal gate work function ...

    Indian Academy of Sciences (India)

    Further- more, quantum effects on the performance of DG-MOSFETs are addressed and discussed. We also study the influence of metal gate work function on the performance of nanoscale MOSFETs. We use a self-consistent Poisson–Schrödinger solver in two dimensions over the entire device. A good agreement with ...

  5. Channel length scaling and the impact of metal gate work function ...

    Indian Academy of Sciences (India)

    As the channel length is reduced from one transistor generation to the next, ... As CMOS technology continues to scale, metal gate electrodes need to be intro .... in the z-direction, q is the electron charge, h is the Planck's constant, Ψ(x, z) is the.

  6. Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

    Directory of Open Access Journals (Sweden)

    Zhen Li

    2015-09-01

    Full Text Available This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measured IIP3. Implications to biasing current and voltage optimization for linearity are discussed.

  7. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

    Science.gov (United States)

    Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

    2018-04-01

    Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

  8. Silver doped metal layers for medical applications

    International Nuclear Information System (INIS)

    Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M

    2014-01-01

    Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 at% to 4.32 at% for steel and from 3.04 at% to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficacy (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using scratch test. The antibacterial efficacy changed with silver doping up to 99.9 %. Our investigation was focused on minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.

  9. Coulomb Oscillations in a Gate-Controlled Few-Layer Graphene Quantum Dot.

    Science.gov (United States)

    Song, Yipu; Xiong, Haonan; Jiang, Wentao; Zhang, Hongyi; Xue, Xiao; Ma, Cheng; Ma, Yulin; Sun, Luyan; Wang, Haiyan; Duan, Luming

    2016-10-12

    Graphene quantum dots could be an ideal host for spin qubits and thus have been extensively investigated based on graphene nanoribbons and etched nanostructures; however, edge and substrate-induced disorders severely limit device functionality. Here, we report the confinement of quantum dots in few-layer graphene with tunable barriers, defined by local strain and electrostatic gating. Transport measurements unambiguously reveal that confinement barriers are formed by inducing a band gap via the electrostatic gating together with local strain induced constriction. Numerical simulations according to the local top-gate geometry confirm the band gap opening by a perpendicular electric field. We investigate the magnetic field dependence of the energy-level spectra in these graphene quantum dots. Experimental results reveal a complex evolution of Coulomb oscillations with the magnetic field, featuring kinks at level crossings. The simulation of energy spectrum shows that the kink features and the magnetic field dependence are consistent with experimental observations, implying the hybridized nature of energy-level spectrum of these graphene quantum dots.

  10. SO-limited mobility in a germanium inversion channel with non-ideal metal gate

    International Nuclear Information System (INIS)

    Shah, Raheel; De Souza, M.M.

    2008-01-01

    Germanium is an attractive candidate for ultra fast CMOS technology due to its potential for doubling electron mobility and quadrupling hole mobility in comparison to silicon. To maintain the requirements of the International Technology Roadmap for Semiconductors (ITRS), high-κ insulators and metal gates will be required in conjunction with Ge technology. Key issues which will have to be addressed in achieving Ge technology are: trap free insulators, assessment of appropriate crystallographic orientations and the selection of gate metals for the best mobility. In this work mobilities are evaluated for Ge-nMOSFET with two metal gates (Al and TiN) and high-κ (HfO 2 ) insulator. Scattering with bulk phonons, surface roughness and high-κ phonons are taken into account. It is predicted that Al as the gate material on Ge {100} substrate performs 50% better than Ge {111} orientation at a sheet concentration of 1 x 10 13 cm -2 . Surface roughness is likely to be the most damaging mobility degradation mechanism at high fields for Ge {111}

  11. Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-10-01

    Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

  12. Magnetic phase transition induced by electrostatic gating in two-dimensional square metal-organic frameworks

    Science.gov (United States)

    Wang, Yun-Peng; Li, Xiang-Guo; Liu, Shuang-Long; Fry, James N.; Cheng, Hai-Ping

    2018-03-01

    We investigate theoretically magnetism and magnetic phase transitions induced by electrostatic gating of two-dimensional square metal-organic framework compounds. We find that electrostatic gating can induce phase transitions between homogeneous ferromagnetic and various spin-textured antiferromagnetic states. Electronic structure and Wannier function analysis can reveal hybridizations between transition-metal d orbitals and conjugated π orbitals in the organic framework. Mn-containing compounds exhibit a strong d -π hybridization that leads to partially occupied spin-minority bands, in contrast to compounds containing transition-metal ions other than Mn, for which electronic structure around the Fermi energy is only slightly spin split due to weak d -π hybridization and the magnetic interaction is of the Ruderman-Kittel-Kasuya-Yosida type. We use a ferromagnetic Kondo lattice model to understand the phase transition in Mn-containing compounds in terms of carrier density and illuminate the complexity and the potential to control two-dimensional magnetization.

  13. Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

    International Nuclear Information System (INIS)

    Liao, Po-Yung; Chang, Ting-Chang; Hsieh, Tien-Yu; Tsai, Ming-Yen; Chen, Bo-Wei; Chu, Ann-Kuo; Chou, Cheng-Hsu; Chang, Jung-Fang

    2016-01-01

    The degree of degradation between the amorphous-indium–gallium–zinc oxide (a-IGZO) thin film transistor (TFT) using the top-gate only or bottom-gate only is compared. Under negative gate bias illumination stress (NBIS), the threshold voltage (V T ) after bottom-gate NBIS monotonically shifts in the negative direction, whereas top-gate NBIS operation exhibits on-state current increases without V T shift. Such anomalous degradation behavior of NBIS under top-gate operation is due to hole-trapping in the etch stop layer above the central portion of the channel. These phenomena can be ascribed to the screening of the electric field by redundant source/drain electrodes. In addition, the device degradation of dual gate a-IGZO TFT stressed with different top gate pulse waveforms is investigated. It is observed that the degradation is dependent on the frequency of the top gate pulses. The V T shift increases with decreasing frequency, indicating the hole mobility of IGZO is low. - Highlights: • Static and dynamic gate bias stresses are imposed on dual gate InGaZnO TFTs. • Top-gate NBIS operation exhibits on-state current increases without VT shift. • The degradation behavior of top-gate NBIS is due to hole-trapping in the ESL. • The degradation is dependent on the frequency of the top gate pulses. • The V T shift increases with decreasing frequency of the top gate pulses.

  14. P-6 : Impact of buffer layers on the self-aligned top-gate a-IGZO TFT characteristics

    NARCIS (Netherlands)

    Nag, M.; en de rest

    2015-01-01

    In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self-aligned (SA) top gate amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT

  15. Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating

    NARCIS (Netherlands)

    Shi, Wu; Ye, Jianting; Zhang, Yijin; Suzuki, Ryuji; Yoshida, Masaro; Miyazaki, Jun; Inoue, Naoko; Saito, Yu; Iwasa, Yoshihiro

    2015-01-01

    Functionalities of two-dimensional (2D) crystals based on semiconducting transition metal dichalcogenides (TMDs) have now stemmed from simple field effect transistors (FETs) to a variety of electronic and opto-valleytronic devices, and even to superconductivity. Among them, superconductivity is the

  16. Alkali metal and alkali metal hydroxide intercalates of the layered transition metal disulfides

    International Nuclear Information System (INIS)

    Kanzaki, Y.; Konuma, M.; Matsumoto, O.

    1981-01-01

    The intercalation reaction of some layered transition metal disulfides with alkali metals, alkali metal hydroxides, and tetraalkylammonium hydroxides were investigated. The alkali metal intercalates were prepared in the respective metal-hexamethylphosphoric triamide solutions in vaccuo, and the hydroxide intercalates in aqueous hydroxide solutions. According to the intercalation reaction, the c-lattice parameter was increased, and the increase indicated the expansion of the interlayer distance. In the case of alkali metal intercalates, the expansion of the interlayer distance increased continuously, corresponding to the atomic radius of the alkali metal. On the other hand, the hydroxide intercalates showed discrete expansion corresponding to the effective ionic radius of the intercalated cation. All intercalates of TaS 2 amd NbS 2 were superconductors. The expansion of the interlayer distance tended to increase the superconducting transition temperature in the intercalates of TaS 2 and vice versa in those of NbS 2 . (orig.)

  17. Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Piatti, E.; Galasso, S.; Tortello, M.; Nair, J.R.; Gerbaldi, C. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Bruna, M.; Borini, S. [Istituto Nazionale di Ricerca Metrologica (INRIM), 10135 Torino (Italy); Daghero, D. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Gonnelli, R.S., E-mail: renato.gonnelli@polito.it [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy)

    2017-02-15

    Highlights: • We fabricated few-layer graphene FETs by mechanical exfoliation and standard microfabrication techniques. • We employed a Li-TFSI based ion gel to induce carrier densities as high as ≈6e14 e{sup −}/cm{sup 2} in the devices' channel. • We found a strong asymmetry in the sheet conductance and mobility doping dependences between electron and hole doping. • We combined the experimental results with ab initio DFT calculations to obtain the average scattering lifetime of the charge carriers. • We found that the increase in the carrier density and an unexpected increase in the density of charged scattering centers compete in determining the scattering lifetime. - Abstract: We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments.

  18. Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

    International Nuclear Information System (INIS)

    Zhang ShuXiang; Yang Hong; Tang Bo; Tang Zhaoyun; Xu Yefeng; Xu Jing; Yan Jiang

    2014-01-01

    ALD HfO 2 films fabricated by a novel multi deposition multi annealing (MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing (D and A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D and A (while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme. (semiconductor technology)

  19. Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

    Science.gov (United States)

    Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

    2018-04-01

    For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

  20. Laser modification of macroscopic properties of metal surface layer

    Science.gov (United States)

    Kostrubiec, Franciszek

    1995-03-01

    Surface laser treatment of metals comprises a number of diversified technological operations out of which the following can be considered the most common: oxidation and rendering surfaces amorphous, surface hardening of steel, modification of selected physical properties of metal surface layers. In the paper basic results of laser treatment of a group of metals used as base materials for electric contacts have been presented. The aim of the study was to test the usability of laser treatment from the viewpoint of requirements imposed on materials for electric contacts. The results presented in the paper refer to two different surface treatment technologies: (1) modification of infusible metal surface layer: tungsten and molybdenum through laser fusing of their surface layer and its crystallization, and (2) modification of surface layer properties of other metals through laser doping of their surface layer with foreign elements. In the paper a number of results of experimental investigations obtained by the team under the author's supervision are presented.

  1. Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt

    KAUST Repository

    Hinkle, Christopher L.; Galatage, Rohit V.; Chapman, Richard A.; Vogel, Eric M.; Alshareef, Husam N.; Freeman, Clive M.; Wimmer, Erich; Niimi, Hiroaki; Li-Fatou, Andrei V.; Shaw, Judy B.; Chambers, James J.

    2010-01-01

    In this contribution, NMOS and PMOS band edge effective work function (EWF) and correspondingly low Vt are demonstrated using standard fab materials and processes in a gate-last scheme. For NMOS, the use of an Al cladding layer results in Vt = 0.08 V consistent with NMOS EWF = 4.15 eV. Migration of the Al cladding into the TiN and a relatively low oxygen concentration near the TiN/HfO2 interface are responsible for the low EWF. For PMOS, employing a W cladding layer along with a post-TiN anneal in an oxidizing ambient results in elevated oxygen concentration near the TiN/HfO2 interface and Vt = -0.20 V consistent with a PMOS EWF = 5.05 eV. First-principles calculations indicate N atoms displaced from the TiN during the oxidizing anneal form dipoles at the TiN/HfO2 interface that play a critical role in determining the PMOS EWF. © 2010 IEEE.

  2. Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt

    KAUST Repository

    Hinkle, Christopher L.

    2010-06-01

    In this contribution, NMOS and PMOS band edge effective work function (EWF) and correspondingly low Vt are demonstrated using standard fab materials and processes in a gate-last scheme. For NMOS, the use of an Al cladding layer results in Vt = 0.08 V consistent with NMOS EWF = 4.15 eV. Migration of the Al cladding into the TiN and a relatively low oxygen concentration near the TiN/HfO2 interface are responsible for the low EWF. For PMOS, employing a W cladding layer along with a post-TiN anneal in an oxidizing ambient results in elevated oxygen concentration near the TiN/HfO2 interface and Vt = -0.20 V consistent with a PMOS EWF = 5.05 eV. First-principles calculations indicate N atoms displaced from the TiN during the oxidizing anneal form dipoles at the TiN/HfO2 interface that play a critical role in determining the PMOS EWF. © 2010 IEEE.

  3. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1−xGaxAs channel capping layer

    Directory of Open Access Journals (Sweden)

    Cheng-Hao Huang

    2015-06-01

    Full Text Available In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor devices with a channel capping layer. The impacts of thickness and gallium (Ga concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In1−xGaxAs/In0.53Ga0.47As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In0.68Ga0.32As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85o is needed for the device with an averaged grain size of NiSi below 4x4 nm2.

  4. Integration issues of high-k and metal gate into conventional CMOS technology

    International Nuclear Information System (INIS)

    Song, S.C.; Zhang, Z.; Huffman, C.; Bae, S.H.; Sim, J.H.; Kirsch, P.; Majhi, P.; Moumen, N.; Lee, B.H.

    2006-01-01

    Issues surrounding the integration of Hf-based high-k dielectrics with metal gates in a conventional CMOS flow are discussed. The careful choice of a gate stack process as well as optimization of other CMOS process steps enables robust CMOSFETs with a wide process latitude. HfO 2 of a 2 nm physical thickness shows complete suppression of transient charge trapping resulting from a significant reduction in film volume as well as kinetically suppressed crystallization. Metal thickness is also critical when optimizing physical stress effects and minimizing dopant diffusion. A high temperature anneal after source and drain implantation in a conventional CMOSFET process reduces the interface state density and improves electron mobility

  5. High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.

    Science.gov (United States)

    Matsuda, Yu; Nakahara, Yoshio; Michiura, Daisuke; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

  6. Resin infusion of layered metal/composite hybrid and resulting metal/composite hybrid laminate

    Science.gov (United States)

    Cano, Roberto J. (Inventor); Grimsley, Brian W. (Inventor); Weiser, Erik S. (Inventor); Jensen, Brian J. (Inventor)

    2009-01-01

    A method of fabricating a metal/composite hybrid laminate is provided. One or more layered arrangements are stacked on a solid base to form a layered structure. Each layered arrangement is defined by a fibrous material and a perforated metal sheet. A resin in its liquid state is introduced along a portion of the layered structure while a differential pressure is applied across the laminate structure until the resin permeates the fibrous material of each layered arrangement and fills perforations in each perforated metal sheet. The resin is cured thereby yielding a metal/composite hybrid laminate.

  7. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Koo, Sang-Mo; Kang, Min-Seok

    2014-01-01

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV th = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10 7 A/cm 2 ) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10 7 A/cm 2 ). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration

  8. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Sang-Mo, E-mail: smkoo@kw.ac.kr; Kang, Min-Seok, E-mail: hyde0220@gmail.com

    2014-10-15

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

  9. Intelligent layered nanoflare: ``lab-on-a-nanoparticle'' for multiple DNA logic gate operations and efficient intracellular delivery

    Science.gov (United States)

    Yang, Bin; Zhang, Xiao-Bing; Kang, Li-Ping; Huang, Zhi-Mei; Shen, Guo-Li; Yu, Ru-Qin; Tan, Weihong

    2014-07-01

    DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of Boolean logic gate operations, including three basic logic gates, one three-input AND gate, and two complex logic operations, in a digital non-leaky way. In addition, the layered nanoflare can serve as a programmable strategy to sequentially tune the size of nanoparticles, as well as a new fingerprint spectrum technique for intelligent multiplex biosensing. More importantly, the nanoflare developed here can also act as a single entity for intracellular DNA logic gate delivery, without the need of commercial transfection agents or other auxiliary carriers. By incorporating DNA circuits on nanoparticles, the presented layered nanoflare will broaden the applications of DNA circuits in biological systems, and facilitate the development of DNA nanotechnology.DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of

  10. Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications

    International Nuclear Information System (INIS)

    Nichau, Alexander

    2013-01-01

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO 3 and HfO 2 are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO 3 and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO 3 is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO 3 on germanium, germanate formation is shown. LaLuO 3 is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO 3 in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO 3 and HfO 2 . Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO 2 gate stacks is scalable below 1 nm by the use of thinned interfacial SiO 2 . The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the gate electrode to decrease the EOT of HfO 2 gate stacks

  11. Characterization, integration and reliability of HfO{sub 2} and LaLuO{sub 3} high-κ/metal gate stacks for CMOS applications

    Energy Technology Data Exchange (ETDEWEB)

    Nichau, Alexander

    2013-07-15

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO{sub 3} and HfO{sub 2} are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO{sub 3} and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO{sub 3} is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO{sub 3} on germanium, germanate formation is shown. LaLuO{sub 3} is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO{sub 3} in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO{sub 3} and HfO{sub 2}. Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO{sub 2} gate stacks is scalable below 1 nm by the use of thinned interfacial SiO{sub 2}. The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the

  12. Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors.

    Science.gov (United States)

    Shibao, Hideto; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

  13. Using white noise to gate organic transistors for dynamic monitoring of cultured cell layers.

    Science.gov (United States)

    Rivnay, Jonathan; Leleux, Pierre; Hama, Adel; Ramuz, Marc; Huerta, Miriam; Malliaras, George G; Owens, Roisin M

    2015-06-26

    Impedance sensing of biological systems allows for monitoring of cell and tissue properties, including cell-substrate attachment, layer confluence, and the "tightness" of an epithelial tissue. These properties are critical for electrical detection of tissue health and viability in applications such as toxicological screening. Organic transistors based on conducting polymers offer a promising route to efficiently transduce ionic currents to attain high quality impedance spectra, but collection of complete impedance spectra can be time consuming (minutes). By applying uniform white noise at the gate of an organic electrochemical transistor (OECT), and measuring the resulting current noise, we are able to dynamically monitor the impedance and thus integrity of cultured epithelial monolayers. We show that noise sourcing can be used to track rapid monolayer disruption due to compounds which interfere with dynamic polymerization events crucial for maintaining cytoskeletal integrity, and to resolve sub-second alterations to the monolayer integrity.

  14. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  15. Gate-controlled metal-insulator transition in the LaAlO{sub 3}/SrTiO{sub 3} system with sub-critical LaAlO{sub 3} thickness

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Joon Sung; Lee, Seung Ran; Chang, Jung-Won; Noh, Hyunho; Baasandorj, Lkhagvasuren; Shim, Seung-Bo; Kim, Jinhee [Korea Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Seung, Sang Keun; Shin, Hyun Sup; Song, Jonghyun [Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2012-12-15

    We studied the electrical conduction in the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface electron system with a sub-critical LAO layer thickness of {proportional_to}3.5 unit cells (uc). It was found that the true dividing point between metallic and insulating behaviour without gating lies near the LAO thickness of 3.5 uc. Our marginally metallic 3.5 uc sample showed a sharp transition to insulating state at temperatures which strongly depended on the applied negative back-gate voltage. The superior gate-controllability of the sample was attributed to its sheet carrier density which was an order of magnitude lower than those of conducting LAO/STO samples with 4 uc or more of LAO layers. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Determination of accurate metal silicide layer thickness by RBS

    International Nuclear Information System (INIS)

    Kirchhoff, J.F.; Baumann, S.M.; Evans, C.; Ward, I.; Coveney, P.

    1995-01-01

    Rutherford Backscattering Spectrometry (RBS) is a proven useful analytical tool for determining compositional information of a wide variety of materials. One of the most widely utilized applications of RBS is the study of the composition of metal silicides (MSi x ), also referred to as polycides. A key quantity obtained from an analysis of a metal silicide is the ratio of silicon to metal (Si/M). Although compositional information is very reliable in these applications, determination of metal silicide layer thickness by RBS techniques can differ from true layer thicknesses by more than 40%. The cause of these differences lies in how the densities utilized in the RBS analysis are calculated. The standard RBS analysis software packages calculate layer densities by assuming each element's bulk densities weighted by the fractional atomic presence. This calculation causes large thickness discrepancies in metal silicide thicknesses because most films form into crystal structures with distinct densities. Assuming a constant layer density for a full spectrum of Si/M values for metal silicide samples improves layer thickness determination but ignores the underlying physics of the films. We will present results of RBS determination of the thickness various metal silicide films with a range of Si/M values using a physically accurate model for the calculation of layer densities. The thicknesses are compared to scanning electron microscopy (SEM) cross-section micrographs. We have also developed supporting software that incorporates these calculations into routine analyses. (orig.)

  17. Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process

    International Nuclear Information System (INIS)

    Qi Lu-Wei; Yang Hong; Ren Shang-Qing; Xu Ye-Feng; Luo Wei-Chun; Xu Hao; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    The positive bias temperature instability (PBTI) degradations of high-k/metal gate (HK/MG) nMOSFETs with thin TiN capping layers (1.4 nm and 2.4 nm) are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI (90 °C, 125 °C, 160 °C) are studied and activation energy (E a ) values (0.13 eV and 0.15 eV) are extracted. Although the equivalent oxide thickness (EOT) values of two TiN thickness values are almost similar (0.85 nm and 0.87 nm), the 2.4-nm TiN one (thicker TiN capping layer) shows better PBTI reliability (13.41% at 0.9 V, 90 °C, 1000 s). This is due to the better interfacial layer/high-k (IL/HK) interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer. (paper)

  18. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Directory of Open Access Journals (Sweden)

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  19. Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

    KAUST Repository

    Alshammari, Fwzah Hamud; Hota, Mrinal Kanti; Wang, Zhenwei; Aljawhari, Hala; Alshareef, Husam N.

    2017-01-01

    Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93

  20. Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

    Science.gov (United States)

    Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

    2016-05-01

    This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

  1. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

    International Nuclear Information System (INIS)

    Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

    2014-01-01

    Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm 2 /V s. The unidirectional shift of turn-on voltage (V on ) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V P /V E ) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm 2 /V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V P /V E of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V on shift. As a result, an enlarged memory window of 28.6 V at the V P /V E of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

  2. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

    Science.gov (United States)

    Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

    2014-09-01

    Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm2/V s. The unidirectional shift of turn-on voltage (Von) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (VP/VE) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm2/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the VP/VE of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional Von shift. As a result, an enlarged memory window of 28.6 V at the VP/VE of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

  3. Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Po-Yung [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Tsai, Ming-Yen; Chen, Bo-Wei; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Chou, Cheng-Hsu; Chang, Jung-Fang [Product Technology Center, Chimei Innolux Corp., Tainan 741, Taiwan (China)

    2016-03-31

    The degree of degradation between the amorphous-indium–gallium–zinc oxide (a-IGZO) thin film transistor (TFT) using the top-gate only or bottom-gate only is compared. Under negative gate bias illumination stress (NBIS), the threshold voltage (V{sub T}) after bottom-gate NBIS monotonically shifts in the negative direction, whereas top-gate NBIS operation exhibits on-state current increases without V{sub T} shift. Such anomalous degradation behavior of NBIS under top-gate operation is due to hole-trapping in the etch stop layer above the central portion of the channel. These phenomena can be ascribed to the screening of the electric field by redundant source/drain electrodes. In addition, the device degradation of dual gate a-IGZO TFT stressed with different top gate pulse waveforms is investigated. It is observed that the degradation is dependent on the frequency of the top gate pulses. The V{sub T} shift increases with decreasing frequency, indicating the hole mobility of IGZO is low. - Highlights: • Static and dynamic gate bias stresses are imposed on dual gate InGaZnO TFTs. • Top-gate NBIS operation exhibits on-state current increases without VT shift. • The degradation behavior of top-gate NBIS is due to hole-trapping in the ESL. • The degradation is dependent on the frequency of the top gate pulses. • The V{sub T} shift increases with decreasing frequency of the top gate pulses.

  4. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Ion transport by gating voltage to nanopores produced via metal-assisted chemical etching method

    Science.gov (United States)

    Van Toan, Nguyen; Inomata, Naoki; Toda, Masaya; Ono, Takahito

    2018-05-01

    In this work, we report a simple and low-cost way to create nanopores that can be employed for various applications in nanofluidics. Nano sized Ag particles in the range from 1 to 20 nm are formed on a silicon substrate with a de-wetting method. Then the silicon nanopores with an approximate 15 nm average diameter and 200 μm height are successfully produced by the metal-assisted chemical etching method. In addition, electrically driven ion transport in the nanopores is demonstrated for nanofluidic applications. Ion transport through the nanopores is observed and could be controlled by an application of a gating voltage to the nanopores.

  6. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    Science.gov (United States)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  7. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

    International Nuclear Information System (INIS)

    Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

    2005-01-01

    AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

  8. Improved adhesion of metal oxide layer

    DEFF Research Database (Denmark)

    2012-01-01

    The present invention relates to: a method of preparing a coating ink for forming a zinc oxide layer, which method comprises the steps of: a) mixing zinc acetate and AlOH (OAc)2 in water or methanol and b) filtering out solids; a coating ink comprising zinc acetate and AlOH (OAc)2 in aqueous or m...

  9. Nanogranular SiO{sub 2} proton gated silicon layer transistor mimicking biological synapses

    Energy Technology Data Exchange (ETDEWEB)

    Liu, M. J.; Huang, G. S., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Feng, P., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Shao, F.; Wan, Q. [School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

    2016-06-20

    Silicon on insulator (SOI)-based transistors gated by nanogranular SiO{sub 2} proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

  10. Rare earth zirconium oxide buffer layers on metal substrates

    Science.gov (United States)

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  11. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    Energy Technology Data Exchange (ETDEWEB)

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M. [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Tang, K.; Ahn, J.; McIntyre, P. C. [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  12. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  13. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

    Directory of Open Access Journals (Sweden)

    Takashi Ando

    2012-03-01

    Full Text Available Current status and challenges of aggressive equivalent-oxide-thickness (EOT scaling of high-κ gate dielectrics via higher-κ ( > 20 materials and interfacial layer (IL scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm, but with effective workfunction (EWF values suitable only for n-type field-effect-transistor (FET. Further exploration for p-type FET-compatible higher-κ materials is needed. Meanwhile, IL scavenging is a promising approach to extend Hf-based high-κ dielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nm. Mobility-EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or La-silicate formation. However, extreme IL scaling (e.g., zero-IL is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime ( < 0.5 nm will be the key technology to satisfy both performance and reliability requirements for future CMOS devices.

  14. Fabrication of metal organic framework materials using a layer-by-layer spin coating approach

    KAUST Repository

    Eddaoudi, Mohamed; Shekhah, Osama

    2016-01-01

    Embodiments describe a method of depositing an MOF, including depositing a metal solution onto a substrate, spinning the substrate sufficient to spread the metal solution, depositing an organic ligand solution onto the substrate and spinning the substrate sufficient to spread the organic ligand solution and form a MOF layer.

  15. Fabrication of metal organic framework materials using a layer-by-layer spin coating approach

    KAUST Repository

    Eddaoudi, Mohamed

    2016-03-17

    Embodiments describe a method of depositing an MOF, including depositing a metal solution onto a substrate, spinning the substrate sufficient to spread the metal solution, depositing an organic ligand solution onto the substrate and spinning the substrate sufficient to spread the organic ligand solution and form a MOF layer.

  16. Effect of layered manufacturing techniques, alloy powders, and layer thickness on metal-ceramic bond strength.

    Science.gov (United States)

    Ekren, Orhun; Ozkomur, Ahmet; Ucar, Yurdanur

    2018-03-01

    Direct metal laser sintering (DMLS) and direct metal laser melting (DMLM) have become popular for fabricating the metal frameworks of metal-ceramic restorations. How the type of layered manufacturing device, layer thickness, and alloy powder may affect the bond strength of ceramic to metal substructure is unclear. The purpose of this in vitro study was to evaluate the bond strength of dental porcelain to metal frameworks fabricated using different layered manufacturing techniques (DMLS and DMLM), Co-Cr alloy powders, and layer thicknesses and to evaluate whether a correlation exists between the bond strength and the number of ceramic remnants on the metal surface. A total of 75 bar-shaped metal specimens (n=15) were fabricated using either DMLS or DMLM. The powder alloys used were Keramit NP-S and EOS-Cobalt-Chrome SP-2 with layer thicknesses of 20 μm and 30 μm. After ceramic application, the metal-ceramic bond strength was evaluated with a 3-point-bend test. Three-way ANOVA followed by the Tukey honest significance difference test were used for statistical analysis (α=.05). De-bonding surface microstructure was observed with scanning electron microscopy. Energy dispersive spectroscopy analysis was conducted to evaluate the correlation between ceramic remnants on the metal surface and bond strength values. The mean bond strength value of DMLS was significantly higher than that of DMLM. While no statistically significant difference was found between layer thicknesses, alloy powders closely affected bond strength. Statistical comparisons revealed that the highest bond strength could be achieved with DMLS-Cobalt-Chrome SP2-20μm, and the lowest bond strength was observed in DMLS-Keramit NP-S-20μm (P≤.05). No correlation was found between porcelain remnants on the metal surface and bond strength values. The layered manufacturing device and the alloy powders evaluated in the current study closely affected the bond strength of dental porcelain to a metal framework

  17. Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation

    International Nuclear Information System (INIS)

    Han Kai; Ma Xueli; Yang Hong; Wang Wenwu

    2013-01-01

    The effect of Al incorporation on the effective work function (EWF) of TiN metal gate was systematically investigated. Metal—oxide—semiconductor (MOS) capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose. Different thickness ratios of Al to TiN and different post metal annealing (PMA) conditions were employed. Significant shift of work function towards to Si conduction band was observed, which was suitable for NMOS and the magnitude of shift depends on the processing conditions. (semiconductor technology)

  18. Optical transparency of graphene layers grown on metal surfaces

    International Nuclear Information System (INIS)

    Rut’kov, E. V.; Lavrovskaya, N. P.; Sheshenya, E. S.; Gall, N. R.

    2017-01-01

    It is shown that, in contradiction with the fundamental results obtained for free graphene, graphene films grown on the Rh(111) surface to thicknesses from one to ~(12–15) single layers do not absorb visible electromagnetic radiation emitted from the surface and influence neither the brightness nor true temperature of the sample. At larger thicknesses, such absorption occurs. This effect is observed for the surfaces of other metals, specifically, Pt(111), Re(1010), and Ni(111) and, thus, can be considered as being universal. It is thought that the effect is due to changes in the electronic properties of thin graphene layers because of electron transfer between graphene and the metal substrate.

  19. Optical transparency of graphene layers grown on metal surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Rut’kov, E. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lavrovskaya, N. P. [State University of Aerospace Instrumentation (Russian Federation); Sheshenya, E. S., E-mail: sheshenayket@gmail.ru; Gall, N. R. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-04-15

    It is shown that, in contradiction with the fundamental results obtained for free graphene, graphene films grown on the Rh(111) surface to thicknesses from one to ~(12–15) single layers do not absorb visible electromagnetic radiation emitted from the surface and influence neither the brightness nor true temperature of the sample. At larger thicknesses, such absorption occurs. This effect is observed for the surfaces of other metals, specifically, Pt(111), Re(1010), and Ni(111) and, thus, can be considered as being universal. It is thought that the effect is due to changes in the electronic properties of thin graphene layers because of electron transfer between graphene and the metal substrate.

  20. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Science.gov (United States)

    Perkins, Charles M.; Triplett, Baylor B.; McIntyre, Paul C.; Saraswat, Krishna C.; Haukka, Suvi; Tuominen, Marko

    2001-04-01

    Structural and electrical properties of gate stack structures containing ZrO2 dielectrics were investigated. The ZrO2 films were deposited by atomic layer chemical vapor deposition (ALCVD) after different substrate preparations. The structure, composition, and interfacial characteristics of these gate stacks were examined using cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The ZrO2 films were polycrystalline with either a cubic or tetragonal crystal structure. An amorphous interfacial layer with a moderate dielectric constant formed between the ZrO2 layer and the substrate during ALCVD growth on chemical oxide-terminated silicon. Gate stacks with a measured equivalent oxide thickness (EOT) of 1.3 nm showed leakage values of 10-5 A/cm2 at a bias of -1 V from flatband, which is significantly less than that seen with SiO2 dielectrics of similar EOT. A hysteresis of 8-10 mV was seen for ±2 V sweeps while a midgap interface state density (Dit) of ˜3×1011 states/cm eV was determined from comparisons of measured and ideal capacitance curves.

  1. Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

    Science.gov (United States)

    Khan, S.; Yogeswaran, N.; Taube, W.; Lorenzelli, L.; Dahiya, R.

    2015-12-01

    This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm2 V-1 s-1. The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates.

  2. Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

    International Nuclear Information System (INIS)

    Khan, S; Yogeswaran, N; Lorenzelli, L; Taube, W; Dahiya, R

    2015-01-01

    This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm 2 V −1 s −1 . The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates. (paper)

  3. Energy loss from internal reflection off metal layers on glass

    Science.gov (United States)

    McDowell, M. W.; Bezuidenhout, D. F.; Klee, H. W.; Theron, E.

    1983-12-01

    The reflection characteristics of metal layers are considered for the situation where the electromagnetic radiation is incident from the glass side. Theoretical and measured reflectance values are presented which indicate that for some metals the reflection has a strong dependence on the refractive index of the incident medium. Some examples are given of recent cases where the above results were an important consideration in the choice of the metallic reflecting material. These results indicate that aluminium should not be automatically considered the best choice for the visible region nor gold for the infra-red.

  4. GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

    2016-07-11

    The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

  5. Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2018-01-01

    A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

  6. Structural variations in layered alkaline earth metal cyclohexyl ...

    Indian Academy of Sciences (India)

    Administrator

    because of the entrance of the guest molecules between the layers, there will be a change in the interlayer distance (Alberti 1978). Although M(IV) organo-phos- phonates are well documented, the chemistry of M(II) organophosphonates especially the alkaline earth metal organophosphonates has been explored marginally ...

  7. High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

    Science.gov (United States)

    Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

    2010-10-29

    Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

  8. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  9. Work Function Tuning in Sub-20nm Titanium Nitride (TiN) Metal Gate: Mechanism and Engineering

    KAUST Repository

    Hasan, Mehdi

    2011-01-01

    thermal budget flow (replicating gate-last) shows similar work function boost up. Also, a work function modulation of 250meV has been possible using oxygen annealing and applying no thermal budget. On the other hand, etch-back of TiN layer can decrease

  10. Reactive boundary layers in metallic rolling contacts

    Energy Technology Data Exchange (ETDEWEB)

    Burbank, John

    2016-05-01

    more thorough investigation into the effects of residual austenite on the properties of this material. The high-performance alternative steels, 36NiCrMoV1-5-7 (hot working steel) and 45SiCrMo6 (spring steel), were heat treated as recommended by their respective manufacturers, and were not case-hardened. The selection of materials with and materials without case-hardening allows for an investigation into whether or not case-hardening is even necessary to deliver acceptable friction behaviour and wear performance. Elemental analyses were conducted by multiple methods to ensure accurate results. Residual austenite contents of the steels and the depth profiles of residual stresses were determined by X-Ray diffraction (XRD), for 20MnCr5 ranging from approximately 6 - 14 vol.%, and under 2 vol.% for the alternative alloys. Hardness profiles were taken from the testing surfaces into the material core. The carburization of 20MnCr5 led to higher hardness and the greater concentration of carbon in the carburization zone more representative of a hardened SAE E52100, or 100Cr6/102Cr6, than of a non-case-hardened 20MnCr5. Residual stresses from machining and case-hardening were measured directly at the sample surface. The high-performance steels fulfilled manufacturer expectations in terms of elemental content, with hardness values between 50 - 55 HRC and strongly martensitic microstructure character. With characterization of the chosen materials complete, the materials could then be subjected to pre-conditioning. The first pre-conditioning method involved targeted generation of cold work hardening as induced boundary layers to protect the contact zone against wear. Work hardening was identified both by variations in residual stress profiles, i.e. the introduction of beneficial compressive residual stresses, and hardness increases in the contact zone, providing enhanced wear resistance. Parameters for work hardening were further optimized to reduce damage to the surface substrates

  11. Reactive boundary layers in metallic rolling contacts

    International Nuclear Information System (INIS)

    Burbank, John

    2016-01-01

    thorough investigation into the effects of residual austenite on the properties of this material. The high-performance alternative steels, 36NiCrMoV1-5-7 (hot working steel) and 45SiCrMo6 (spring steel), were heat treated as recommended by their respective manufacturers, and were not case-hardened. The selection of materials with and materials without case-hardening allows for an investigation into whether or not case-hardening is even necessary to deliver acceptable friction behaviour and wear performance. Elemental analyses were conducted by multiple methods to ensure accurate results. Residual austenite contents of the steels and the depth profiles of residual stresses were determined by X-Ray diffraction (XRD), for 20MnCr5 ranging from approximately 6 - 14 vol.%, and under 2 vol.% for the alternative alloys. Hardness profiles were taken from the testing surfaces into the material core. The carburization of 20MnCr5 led to higher hardness and the greater concentration of carbon in the carburization zone more representative of a hardened SAE E52100, or 100Cr6/102Cr6, than of a non-case-hardened 20MnCr5. Residual stresses from machining and case-hardening were measured directly at the sample surface. The high-performance steels fulfilled manufacturer expectations in terms of elemental content, with hardness values between 50 - 55 HRC and strongly martensitic microstructure character. With characterization of the chosen materials complete, the materials could then be subjected to pre-conditioning. The first pre-conditioning method involved targeted generation of cold work hardening as induced boundary layers to protect the contact zone against wear. Work hardening was identified both by variations in residual stress profiles, i.e. the introduction of beneficial compressive residual stresses, and hardness increases in the contact zone, providing enhanced wear resistance. Parameters for work hardening were further optimized to reduce damage to the surface substrates of the

  12. Design and implementation of an efficient single layer five input majority voter gate in quantum-dot cellular automata.

    Science.gov (United States)

    Bahar, Ali Newaz; Waheed, Sajjad

    2016-01-01

    The fundamental logical element of a quantum-dot cellular automata (QCA) circuit is majority voter gate (MV). The efficiency of a QCA circuit is depends on the efficiency of the MV. This paper presents an efficient single layer five-input majority voter gate (MV5). The structure of proposed MV5 is very simple and easy to implement in any logical circuit. This proposed MV5 reduce number of cells and use conventional QCA cells. However, using MV5 a multilayer 1-bit full-adder (FA) is designed. The functional accuracy of the proposed MV5 and FA are confirmed by QCADesigner a well-known QCA layout design and verification tools. Furthermore, the power dissipation of proposed circuits are estimated, which shows that those circuits dissipate extremely small amount of energy and suitable for reversible computing. The simulation outcomes demonstrate the superiority of the proposed circuit.

  13. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    Science.gov (United States)

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  14. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Directory of Open Access Journals (Sweden)

    Minkyu Chun

    2015-05-01

    Full Text Available We investigated the effects of top gate voltage (VTG and temperature (in the range of 25 to 70 oC on dual-gate (DG back-channel-etched (BCE amorphous-indium-gallium-zinc-oxide (a-IGZO thin film transistors (TFTs characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  15. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  16. High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-01-01

    In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

  17. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Science.gov (United States)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  18. Comparative study of the synthesis of layered transition metal molybdates

    International Nuclear Information System (INIS)

    Mitchell, S.; Gomez-Aviles, A.; Gardner, C.; Jones, W.

    2010-01-01

    Mixed metal oxides (MMOs) prepared by the mild thermal decomposition of layered double hydroxides (LDHs) differ in their reactivity on exposure to aqueous molybdate containing solutions. In this study, we investigate the reactivity of some T-Al containing MMOs (T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates (LTMs) possessing the general formula AT 2 (OH)(MoO 4 ) 2 .H 2 O, where A=NH 4 + , Na + or K + . The phase selectivity of the reaction was studied with respect to the source of molybdate, the ratio of T to Mo and the reaction pH. LTMs were obtained on reaction of Cu-Al and Zn-Al containing MMOs with aqueous solutions of ammonium heptamolybdate. Rehydration of these oxides in the presence of sodium or potassium molybdate yielded a rehydrated LDH phase as the only crystalline product. The LTM products obtained by the rehydration of MMO precursors were compared with LTMs prepared by direct precipitation from the metal salts in order to study the influence of preparative route on their chemical and physical properties. Differences were noted in the composition, morphology and thermal properties of the resulting products. - Graphical abstract: Mixed metal oxides (MMOs) derived from layered double hydroxide precursors differ in their reactivity on exposure to aqueous molybdate containing solutions. We investigate the influence of the molybdate source, the rehydration pH and the ratio of T/Mo on the reactivity of some T-Al containing MMOs (T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates of general formula AT 2 (OH)(MoO 4 ) 2 .H 2 O (where A + =NH 4 + , K + or Na + ).

  19. Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3

    International Nuclear Information System (INIS)

    Mitrovic, I.Z.; Przewlocki, H.M.; Piskorski, K.; Simutis, G.; Dhanak, V.R.; Sedghi, N.; Hall, S.

    2012-01-01

    This paper presents experimental evidence on effective work function tuning due to the presence of oxygen at the TiNx/LaLuO 3 interface. Two complementary techniques, internal photoemission and X-ray photoelectron spectroscopy, show good agreement on the position of the metal gate Fermi level to conduction (2.79 ± 0.25 eV) and valence (2.65 ± 0.08 eV) band edge for TiNx/bulk LaLuO 3 gate stacks. The chemical shifts of Ti2p and N1s core levels and different degree in ionicity of TiNx metal gates correlate with the observed valence band offset shifts. The results have significance for setting the band edge work function and resulting low threshold voltage for ultimately scaled LaLuO 3 -based p-metal oxide semiconductor field effect transistor devices. - Highlights: ► The conduction band offset measured by internal photoemission. ► The valence band offset (VBO) measured by X-ray photoelectron spectroscopy. ► Different degree in ionicity of TiNx correlates with the VBO shifts. ► The effective work function of the gate stacks varies from 4.6 to 5.2 eV. ► Oxygen at the TiNx/LaLuO 3 interface increases effective work function.

  20. Theoretical bases on thermal stability of layered metallic systems

    International Nuclear Information System (INIS)

    Kadyrzhanov, K.K.; Rusakov, V.S.; Turkebaev, T.Eh.; Zhankadamova, A.M.; Ensebaeva, M.Z.

    2003-01-01

    The paper is dedicated to implementation of the theoretical bases for layered metallic systems thermal stabilization. The theory is based on the stabilization mechanism expense of the intermediate two-phase field formation. As parameters of calculated model are coefficients of mutual diffusion and inclusions sizes of generated phases in two-phase fields. The stabilization time dependence for beryllium-iron (Be (1.1 μm)-Fe(5.5 μm)) layered system from iron and beryllium diffusion coefficients, and inclusions sizes is shown as an example. Conclusion about possible mechanisms change at transition from microscopic consideration to the nano-crystal physics level is given

  1. Hydrogen permeation resistant layers for liquid metal reactors

    International Nuclear Information System (INIS)

    McGuire, J.C.

    1980-03-01

    Reviewing the literature in the tritium diffusion field one can readily see a wide divergence in results for both the response of permeation rate to pressure, and the effect of oxide layers on total permeation rates. The basic mechanism of protective oxide layers is discussed. Two coatings which are less hydrogen permeable than the best naturally occurring oxide are described. The work described is part of an HEDL-ANL cooperative research program on Tritium Permeation in Liquid Metal Cooled Reactors. This includes permeation work on hydrogen, deuterium, and tritium with the hydrogen-deuterium research leading to the developments presented

  2. Processing and performance of organic insulators as a gate layer in ...

    Indian Academy of Sciences (India)

    Fabrication of organic thin film transistor (OTFT) on flexible substrates is a challenge, because of its low softening temperature, high roughness and flexible nature. Although several organic dielectrics have been used as gate insulator, it is difficult to choose one in absence of a comparative study covering processing of ...

  3. Processing and performance of organic insulators as a gate layer in ...

    Indian Academy of Sciences (India)

    Abstract. Fabrication of organic thin film transistor (OTFT) on flexible substrates is a challenge, because of its low softening temperature, high roughness and flexible nature. Although several organic dielectrics have been used as gate insulator, it is difficult to choose one in absence of a comparative study covering ...

  4. Characteristics of dual-gate thin-film transistors for applications in digital radiology

    International Nuclear Information System (INIS)

    Waechter, D.; Huang, Z.; Zhao, W.; Blevis, I.; Rowlands, J.A.

    1996-01-01

    A large-area flat-panel detector for digital radiology is being developed. The detector uses an array of dual-gate thin-film transistors (TFTs) to read out X-ray-generated charge produced in an amorphous selenium (a-Se) layer. The TFTs use CdSe as the semiconductor and use the bottom gate for row selection. The top gate can be divided into a 'deliberate' gate, covering most of the channel length, and small 'parasitic' gates that consist of: overlap of source or drain metal over the top-gate oxide; and gap regions in the metal that are covered only by the a-Se. In this paper we present the properties of dual-gate TFTs and examine the effect of both the deliberate and parasitic gates on the detector operation. Various options for controlling the top-gate potential are analyzed and discussed. (author)

  5. Electrical and materials properties of AlN/ HfO{sub 2} high-k stack with a metal gate

    Energy Technology Data Exchange (ETDEWEB)

    Reid, Kimberly G. [Tokyo Electron U.S., 14338 FM 1826, Austin, TX 78737 (United States)], E-mail: kim@ireid.com; Dip, Anthony [Tokyo Electron U.S., 2400 Grove Blvd., Austin, TX 78747 (United States)], E-mail: anthony.dip@us.tel.com; Sasaki, Sadao [Tokyo Electron U.S. (United States)], E-mail: Sadao.sasaki@us.tel.com; Triyoso, Dina [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Dina.Triyoso@freescale.com; Samavedam, Sri [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Sri.Samavedam@freescale.com; Gilmer, David [SEMATECH 2706 Montopolis Drive, Austin, TX 78741 (United States)], E-mail: David.Gilmer@sematech.org; Gondran, Carolyn F.H. [Process Characterization Laboratory, ATDF/SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States)], E-mail: Carolyn.Gondran@atdf.com

    2009-02-27

    In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO{sub 2} that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO{sub 2} using sequential exposures of trimethyl-aluminum and ammonia (NH{sub 3}) in a batch vertical furnace. Excellent thickness uniformity on test wafers from the top of the furnace to the bottom of the furnace (across the furnace load) was obtained. The equivalent oxide thickness was 16.5-18.8 A for the AlN/HfO{sub 2} stack on patterned device wafers with a molybdenum oxynitride metal gate with leakage current densities from low 10{sup -5} to mid 10{sup -6} A/cm{sup 2} at threshold voltage minus one volt. There was no change in the work function with the AlN cap on HfO{sub 2} with the MoN metal gate, even with a 1000 deg. C anneal.

  6. Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor

    International Nuclear Information System (INIS)

    Zhang Xianjun; Yang Yintang; Chai Changchun; Duan Baoxing; Song Kun; Chen Bin

    2012-01-01

    A lower doped layer is inserted between the gate and channel layer and its effect on the performance of a 4H-SiC Schottky barrier field-effect transistor (MESFET) is investigated. The dependences of the drain current and small signal parameters on this inserted gate-buffer layer are obtained by solving one-dimensional (1-D) and two-dimensional (2-D) Poisson's equations. The drain current and small signal parameters of the 4H-SiC MESFET with a gate-buffer layer thickness of 0.15 μm are calculated and the breakdown characteristics are simulated. The results show that the current is increased by increasing the thickness of the gate-buffer layer; the breakdown voltage is 160 V, compared with 125 V for the conventional 4H-SiC MESFET; the cutoff frequency is 27 GHz, which is higher than 20 GHz of the conventional structure due to the lower doped gate-buffer layer. (semiconductor devices)

  7. Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor

    Science.gov (United States)

    Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

    2017-11-01

    To reduce the thermal budget and the short channel effects in state of the art CMOS technology, Junctionless field effect transistor (JLFET) has been proposed in the literature. Numerous experimental, modeling, and simulation based works have been done on this new FET with bulk materials for various geometries until now. On the other hand, the two-dimensional layered material is considered as an alternative to current Si technology because of its ultra-thin body and high mobility. Very recently few simulation based works have been done on monolayer molybdenum disulfide based JLFET mainly to show the advantage of JLFET over conventional FET. However, no comprehensive simulation-based work has been done for double gate JLFET keeping in mind the prominent transition metal dichalcogenides (TMDC) to the authors' best knowledge. In this work, we have studied quantum ballistic drain current-gate voltage characteristics of such FETs within non-equilibrium Green's function (NEGF) framework. Our simulation results reveal that all these TMDC materials are viable options for implementing state of the art Junctionless MOSFET with emphasis on their performance at short gate lengths. Besides evaluating the prospect of TMDC materials in the digital logic application, the performance of Junctionless Double Gate trilayer TMDC heterostructure FET for the label-free electrical detection of biomolecules in dry environment has been investigated for the first time to the authors' best knowledge. The impact of charge neutral biomolecules on the electrical characteristics of the biosensor has been analyzed under dry environment situation. Our study shows that these materials could provide high sensitivity in the sub-threshold region as a channel material in nano-biosensor, a trend demonstrated by silicon on insulator FET sensor in the literature. Thus, going by the trend of replacing silicon with these novel materials in device level, TMDC heterostructure could be a viable alternative to

  8. Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    International Nuclear Information System (INIS)

    Koh, D.; Kwon, H. M.; Kim, T.-W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Kim, D.-H.; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Banerjee, S. K.

    2014-01-01

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In 0.53 Ga 0.47 As MOS capacitors with BeO and Al 2 O 3 and compared their electrical characteristics. As interface passivation layer, BeO/HfO 2 bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In 0.7 Ga 0.3 As QW MOSFETs with a BeO/HfO 2 dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g m,max ) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond

  9. Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

    Science.gov (United States)

    Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

    2018-05-01

    An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

  10. Adsorption of metal adatoms on single-layer phosphorene.

    Science.gov (United States)

    Kulish, Vadym V; Malyi, Oleksandr I; Persson, Clas; Wu, Ping

    2015-01-14

    Single- or few-layer phosphorene is a novel two-dimensional direct-bandgap nanomaterial. Based on first-principles calculations, we present a systematic study on the binding energy, geometry, magnetic moment and electronic structure of 20 different adatoms adsorbed on phosphorene. The adatoms cover a wide range of valences, including s and p valence metals, 3d transition metals, noble metals, semiconductors, hydrogen and oxygen. We find that adsorbed adatoms produce a rich diversity of structural, electronic and magnetic properties. Our work demonstrates that phosphorene forms strong bonds with all studied adatoms while still preserving its structural integrity. The adsorption energies of adatoms on phosphorene are more than twice higher than on graphene, while the largest distortions of phosphorene are only ∼0.1-0.2 Å. The charge carrier type in phosphorene can be widely tuned by adatom adsorption. The unique combination of high reactivity with good structural stability is very promising for potential applications of phosphorene.

  11. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-11-30

    Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

  12. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.; Wang, H.; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2012-01-01

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  13. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-09-10

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  14. Direct Structural Identification of Gas Induced Gate-Opening Coupled with Commensurate Adsorption in a Microporous Metal-Organic Framework.

    Science.gov (United States)

    Banerjee, Debasis; Wang, Hao; Plonka, Anna M; Emge, Thomas J; Parise, John B; Li, Jing

    2016-08-08

    Gate-opening is a unique and interesting phenomenon commonly observed in flexible porous frameworks, where the pore characteristics and/or crystal structures change in response to external stimuli such as adding or removing guest molecules. For gate-opening that is induced by gas adsorption, the pore-opening pressure often varies for different adsorbate molecules and, thus, can be applied to selectively separate a gas mixture. The detailed understanding of this phenomenon is of fundamental importance to the design of industrially applicable gas-selective sorbents, which remains under investigated due to the lack of direct structural evidence for such systems. We report a mechanistic study of gas-induced gate-opening process of a microporous metal-organic framework, [Mn(ina)2 ] (ina=isonicotinate) associated with commensurate adsorption, by a combination of several analytical techniques including single crystal X-ray diffraction, in situ powder X-ray diffraction coupled with differential scanning calorimetry (XRD-DSC), and gas adsorption-desorption methods. Our study reveals that the pronounced and reversible gate opening/closing phenomena observed in [Mn(ina)2 ] are coupled with a structural transition that involves rotation of the organic linker molecules as a result of interaction of the framework with adsorbed gas molecules including carbon dioxide and propane. The onset pressure to open the gate correlates with the extent of such interaction. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

    Science.gov (United States)

    Sarkar, Suman; Kundu, Sarathi

    2018-04-01

    Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

  16. Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

    Science.gov (United States)

    Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

    2007-10-01

    In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

  17. Comparative study of the synthesis of layered transition metal molybdates

    Science.gov (United States)

    Mitchell, S.; Gómez-Avilés, A.; Gardner, C.; Jones, W.

    2010-01-01

    Mixed metal oxides (MMOs) prepared by the mild thermal decomposition of layered double hydroxides (LDHs) differ in their reactivity on exposure to aqueous molybdate containing solutions. In this study, we investigate the reactivity of some T-Al containing MMOs ( T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates (LTMs) possessing the general formula AT2(OH)(MoO 4) 2·H 2O, where A=NH 4+, Na + or K +. The phase selectivity of the reaction was studied with respect to the source of molybdate, the ratio of T to Mo and the reaction pH. LTMs were obtained on reaction of Cu-Al and Zn-Al containing MMOs with aqueous solutions of ammonium heptamolybdate. Rehydration of these oxides in the presence of sodium or potassium molybdate yielded a rehydrated LDH phase as the only crystalline product. The LTM products obtained by the rehydration of MMO precursors were compared with LTMs prepared by direct precipitation from the metal salts in order to study the influence of preparative route on their chemical and physical properties. Differences were noted in the composition, morphology and thermal properties of the resulting products.

  18. Selective and low temperature transition metal intercalation in layered tellurides

    Science.gov (United States)

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-01-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid. PMID:27966540

  19. Optical properties of metallic multi-layer films

    International Nuclear Information System (INIS)

    Dimmich, R.

    1991-09-01

    Optical properties of multi-layer films consisting of alternating layers of two different metals are studied on the basis of the Maxwell equations and the Boltzmann transport theory. The influence of free-electron scattering at the film external surface and at the interfaces is taken into account and considered as a function of the electromagnetic field frequency and the structure modulation wavelength. Derived formulas for optical coefficients are valid at low frequencies, where the skin effect is nearly classical, as well as in the near-infrared, visible and ultraviolet spectral ranges, where the skin effect has the anomalous nature. It is shown that the obtained results are apparently dependent on the values of the scattering parameters. What is more, the oscillatory nature of analyzed spectra is observed, where the two oscillation periods may appear on certain conditions. The oscillations result from the electron surface and interface scattering and their amplitudes and periods depend on the boundary conditions for free-electron scattering. Finally, the application of the interference phenomenon in dielectric layers is proposed to obtain the enhancement of the non distinct details which can appear in optical spectra of metallic films. (author). 31 refs, 6 figs

  20. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  1. Nucleation and Early Stages of Layer-by-Layer Growth of Metal Organic Frameworks on Surfaces

    Science.gov (United States)

    2015-01-01

    High resolution atomic force microscopy (AFM) is used to resolve the evolution of crystallites of a metal organic framework (HKUST-1) grown on Au(111) using a liquid-phase layer-by-layer methodology. The nucleation and faceting of individual crystallites is followed by repeatedly imaging the same submicron region after each cycle of growth and we find that the growing surface is terminated by {111} facets leading to the formation of pyramidal nanostructures for [100] oriented crystallites, and triangular [111] islands with typical lateral dimensions of tens of nanometres. AFM images reveal that crystallites can grow by 5–10 layers in each cycle. The growth rate depends on crystallographic orientation and the morphology of the gold substrate, and we demonstrate that under these conditions the growth is nanocrystalline with a morphology determined by the minimum energy surface. PMID:26709359

  2. Multiphase layered oxide growth on pure metals. I. General formulation

    International Nuclear Information System (INIS)

    Fromhold, A.T. Jr.

    1982-01-01

    A general formulation for the simultaneous growth of any number of layered planar oxide phases on a pure metal under diffusion-controlled conditions has been developed. Four individual situations have been developed in detail, namely, situations in which the predominant mode of ion transport is by cation interstitials, cation vacancies, anion interstitials, or anion vacancies. The generalized formulation enables the determination of quasi-steady-state growth kinetics following step function changes in the experimental conditions such as ambient oxygen pressure or temperature. Numerical evaluation of the coupled growth equations for the individual phases is required to deduce the general predictions of the theory. In the limit of two-layer growth by cation interstitial diffusion, the present formulation reproduces the earlier results of Fromhold and Sato

  3. Optical Two Dimensional Fourier Transform Spectroscopy of Layered Metal Dichalcogenides

    Science.gov (United States)

    Dey, P.; Paul, J.; Stevens, C. E.; Kovalyuk, Z. D.; Kudrynskyi, Z. R.; Romero, A. H.; Cantarero, A.; Hilton, D. J.; Shan, J.; Karaiskaj, D.; Z. D. Kovalyuk; Z. R. Kudrynskyi Collaboration; A. H. Romero Collaboration; A. Cantarero Collaboration; D. J. Hilton Collaboration; J. Shan Collaboration

    2015-03-01

    Nonlinear two-dimensional Fourier transform (2DFT) measurements were used to study the mechanism of excitonic dephasing and probe the electronic structure of the excitonic ground state in layered metal dichalcogenides. Temperature-dependent 2DFT measurements were performed to probe exciton-phonon interactions. Excitation density dependent 2DFT measurements reveal exciton-exciton and exciton-carrier scattering, and the lower limit for the homogeneous linewidth of excitons on positively and negatively doped samples. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0012635.

  4. Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

    Science.gov (United States)

    Zonensain, Oren; Fadida, Sivan; Fisher, Ilanit; Gao, Juwen; Danek, Michal; Eizenberg, Moshe

    2018-01-01

    This study is a thorough investigation of the chemical, structural, and electrical stability of W based organo-metallic films, grown by atomic layer deposition, for future use as gate electrodes in advanced metal oxide semiconductor structures. In an earlier work, we have shown that high effective work-function (4.7 eV) was produced by nitrogen enriched films (WCxNy) dominated by W-N chemical bonding, and low effective work-function (4.2 eV) was produced by hydrogen plasma resulting in WCx films dominated by W-C chemical bonding. In the current work, we observe, using x-ray diffraction analysis, phase transformation of the tungsten carbide and tungsten nitride phases after 900 °C annealing to the cubic tungsten phase. Nitrogen diffusion is also observed and is analyzed with time-of-flight secondary ion mass spectroscopy. After this 900 °C anneal, WCxNy effective work function tunability is lost and effective work-function values of 4.7-4.8 eV are measured, similar to stable effective work function values measured for PVD TiN up to 900 °C anneal. All the observed changes after annealing are discussed and correlated to the observed change in the effective work function.

  5. Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor.

    Science.gov (United States)

    Pulikkathodi, Anil Kumar; Sarangadharan, Indu; Chen, Yi-Hong; Lee, Geng-Yen; Chyi, Jen-Inn; Lee, Gwo-Bin; Wang, Yu-Lin

    2018-03-27

    In this research, we have designed, fabricated and characterized an electrical double layer (EDL)-gated AlGaN/GaN high electron mobility transistor (HEMT) biosensor array to study the transmembrane potential changes of cells. The sensor array platform is designed to detect and count circulating tumor cells (CTCs) of colorectal cancer (CRC) and investigate cellular bioelectric signals. Using the EDL FET biosensor platform, cellular responses can be studied in physiological salt concentrations, thereby eliminating complex automation. Upon investigation, we discovered that our sensor response follows the transmembrane potential changes of captured cells. Our whole cell sensor platform can be used to monitor the dynamic changes in the membrane potential of cells. The effects of continuously changing electrolyte ion concentrations and ion channel blocking using cadmium are investigated. This methodology has the potential to be used as an electrophysiological probe for studying ion channel gating and the interaction of biomolecules in cells. The sensor can also be a point-of-care diagnostic tool for rapid screening of diseases.

  6. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  7. Single attosecond pulse generation by using plasmon-driven double optical gating technology in crossed metal nanostructures

    Science.gov (United States)

    Feng, Liqiang; Liu, Katheryn

    2018-05-01

    An effective method to obtain the single attosecond pulses (SAPs) by using the multi-cycle plasmon-driven double optical gating (DOG) technology in the specifically designed metal nanostructures has been proposed and investigated. It is found that with the introduction of the crossed metal nanostructures along the driven and the gating polarization directions, not only the harmonic cutoff can be extended, but also the efficient high-order harmonic generation (HHG) at the very highest orders occurs only at one side of the region inside the nanostructure. As a result, a 93 eV supercontinuum with the near stable phase can be found. Further, by properly introducing an ultraviolet (UV) pulse into the driven laser polarization direction (which is defined as the DOG), the harmonic yield can be enhanced by two orders of magnitude in comparison with the singe polarization gating (PG) technology. However, as the polarized angle or the ellipticity of the UV pulse increase, the enhancement of the harmonic yield is slightly reduced. Finally, by superposing the selected harmonics from the DOG scheme, a 30 as SAP with intensity enhancement of two orders of magnitude can be obtained.

  8. Metal-phthalocyanine ordered layers on Au(110): Metal-dependent adsorption energy

    Energy Technology Data Exchange (ETDEWEB)

    Massimi, Lorenzo, E-mail: lorenzo.massimi@uniroma1.it; Angelucci, Marco; Gargiani, Pierluigi; Betti, Maria Grazia [Dipartimento di Fisica, Università di Roma La “Sapienza,” 00185 Roma (Italy); Montoro, Silvia [IFIS Litoral, CONICET-UNL, Laboratorio de Fisica de Superficies e Interfaces, Güemes 3450, Santa Fe (Argentina); Mariani, Carlo, E-mail: carlo.mariani@uniroma1.it [Dipartimento di Fisica, CNISM, Università di Roma La “Sapienza,” 00185 Roma (Italy)

    2014-06-28

    Iron-phthalocyanine and cobalt-phthalocyanine chains, assembled along the Au(110)-(1×2) reconstructed channels, present a strong interaction with the Au metallic states, via the central metal ion. X-ray photoemission spectroscopy from the metal-2p core-levels and valence band high-resolution ultraviolet photoelectron spectroscopy bring to light signatures of the interaction of the metal-phthalocyanine single-layer with gold. The charge transfer from Au to the molecule causes the emerging of a metal-2p core level component at lower binding energy with respect to that measured in the molecular thin films, while the core-levels associated to the organic macrocycle (C and N 1s) are less influenced by the adsorption, and the macrocycles stabilize the interaction, inducing a strong interface dipole. Temperature Programmed Desorption experiments and photoemission as a function of temperature allow to estimate the adsorption energy for the thin-films, mainly due to the molecule-molecule van der Waals interaction, while the FePc and CoPc single-layers remain adsorbed on the Au surface up to at least 820 K.

  9. Issues involved in the atomic layer deposition of metals

    Science.gov (United States)

    Grubbs, Robert Kimes

    Auger Electron Spectroscopy (AES) was used to study the nucleation and growth of tungsten on aluminum oxide surfaces. Tungsten metal was deposited using Atomic Layer Deposition (ALD) techniques. ALD uses sequential surface reactions to deposit material with atomic layer control. W ALD is performed using sequential exposures of WF6 and Si2H6. The step-wise nature of W ALD allows nucleation studies to be performed by analyzing the W surface concentration after each ALD reaction. Nucleation and growth regions can be identified by quantifying the AES signal intensities from both the W surface and the Al2O3 substrate. W nucleation occurred in 3 ALD reaction cycles. The AES results yielded a nucleation rate of 1.0 A/ALD cycle and a growth rate of ≈3 A/ALD cycle. AES studies also explored the nucleation and growth of Al2O3 on W. Al2O3 nucleated in 1 ALD cycle giving a nucleation rate of 3.5 A/ALD cycle and a subsequent growth rate of 1.0 A/ALD cycle. Mass spectrometry was then used to study the ALD reaction chemistry of tungsten deposition. Because of the step-wise nature of the W ALD chemistry, each W ALD reaction could be studied independently. The gaseous mass products were identified from both the WF6 and Si2H6 reactions. H2, HF and SiF4 mass products were observed for the WF6 reaction. The Si2H6 reaction displayed a room temperature reaction and a 200°C reaction. Products from the room temperature Si2H6 reaction were H2 and SiF3H. The reaction at 200°C yielded only H2 as a reaction product. H2 desorption from the surface contributes to the 200°C Si2H6 reaction. AES was used to confirm that the gas phase reaction products are correlated with a change in the surface species. Atomic hydrogen reduction of metal halides and oganometallic compounds provides another method for depositing metals with atomic layer control. The quantity of atomic hydrogen necessary to perform this chemistry is critical to the metal ALD process. A thermocouple probe was constructed to

  10. Layered Metal Hydroxides Containing Calcium and Their Structural Analysis

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tae Hyun; Heo, Il; Lee, Sung Han; Oh, Jae Min [College of Science and Technology, Yonsei University, Wonju (Korea, Republic of); Paek, Seung Min [Kyungpook National University, Daegu (Korea, Republic of); Park, Chung Berm; Choi, Ae Jin [National Institute of Horticultural and Herbal Science of R and D Eumseong (Korea, Republic of); Choy, Jin Ho [Ewha Womans University, Seoul (Korea, Republic of)

    2012-06-15

    Layered metal hydroxides (LMHs) containing calcium were synthesized by coprecipitation in solution having two different trivalent metal ions, iron and aluminum. Two mixed metal solutions (Ca{sup 2+}/Al{sup 3+} and Ca{sup 2+}/Fe{sup 3+} = 2/1) were added to sodium hydroxide solution and the final pH was adjusted to {approx}11.5 and {approx}13 for CaAl-and CaFe-LMHs. Powder X-ray diffraction (XRD) for the two LMH samples showed well developed (00l) diffractions indicating 2-dimensional crystal structure of the synthesized LMHs. Rietveld refinement of the X-ray diffraction pattern, the local structure analysis through X-ray absorption spectroscopy, and thermal analysis also confirmed that the synthesized precipitates show typical structure of LMHs. The chemical formulae, Ca{sub 2.04}Al{sub 1}(OH){sub 6}(NO{sub 3}){center_dot}5.25H{sub 2}O and Ca{sub 2.01}Fe{sub 1}(OH){sub 6}(NO{sub 3}){center_dot}4.75H{sub 2}O were determined by inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Particle morphology and thermal behavior for the synthesized LMHs were examined by field emission scanning electron microscopy and thermogravimetric differential scanning calorimetry

  11. Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

    International Nuclear Information System (INIS)

    Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

    2009-01-01

    We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

  12. Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

    Science.gov (United States)

    Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

    2015-05-01

    We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

  13. Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

    International Nuclear Information System (INIS)

    Wang, Junjie; Feng, Simin; Rhodes, Daniel; Balicas, Luis; Nguyen, Minh An T.; Watanabe, K.; Taniguchi, T.; Mallouk, Thomas E.; Terrones, Mauricio; Zhu, J.

    2015-01-01

    Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe 2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10 13 /cm 2 /eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices

  14. Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junjie; Feng, Simin [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Rhodes, Daniel; Balicas, Luis [National High Magnetic Field Lab, Florida State University, Tallahassee, Florida 32310 (United States); Nguyen, Minh An T. [Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Mallouk, Thomas E. [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Biochemistry and Molecular Biology, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Terrones, Mauricio [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Zhu, J., E-mail: jzhu@phys.psu.edu [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-04-13

    Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

  15. Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

    Science.gov (United States)

    Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

    2018-04-01

    A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

  16. Impacts of zinc layer and pouring method on interface performance for Al-22Si/ZL104 bi-metal

    Directory of Open Access Journals (Sweden)

    Jun-feng Zhao

    2017-01-01

    Full Text Available Bi-metal material consisting of spray-formed Al-22Si and ZL104 is a suitable candidate for applications in internal combustion engines. This research investigated the effects of surface treatment and appropriate gating system on the microstructures and mechanical properties in evaluating the optimal strategy for producing high quality bi-metal materials. The bi-metal materials were prepared using ZL104 gravity casting by different pouring types around the spray-formed Al-22Si with varied surface treatments. The wettability between Al-22Si and ZL104 was significantly improved when Zn coating was used to remove the natural oxide layer. This research also obtained the improved interfacial microstructures and interfacial bonding strength for materials when applying the appropriate pouring method. The hardness profiles of Al-22Si/ZL104 bi-metal were consistent with the observed microstructures. The average tensile strength of the bi-metal material with zinc coating is ~42.3 MPa, which is much higher than that with oxide film at ~10 MPa. The process presented is a promising and effective approach for developing materials in the automotive industry.

  17. Exact matrix treatment of statistical mechanical lattice model of adsorption induced gate opening in metal-organic frameworks

    International Nuclear Information System (INIS)

    Dunne, Lawrence J; Manos, George

    2015-01-01

    Here we present a statistical mechanical lattice model which is exactly solvable using a matrix method and allows treatment of adsorption induced gate opening structural transformations of metal-organic frameworks which are nanoporous materials with exceptional adsorption properties. Modelling of these structural changes presents a serious theoretical challenge when the solid and gas species are treated in an even handed way. This exactly solvable model complements other simulation based approaches. The methodology presented here highlights the competition between the potential for adsorption and the energy required for structural transition as a driving force for the features in the adsorption isotherms. (paper)

  18. Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs

    Science.gov (United States)

    Rao, Rathnamala; Katti, Guruprasad; Havaldar, Dnyanesh S.; DasGupta, Nandita; DasGupta, Amitava

    2009-03-01

    The paper describes the unified analytical threshold voltage model for non-uniformly doped, dual metal gate (DMG) fully depleted silicon-on-insulator (FDSOI) MOSFETs based on the solution of 2D Poisson's equation. 2D Poisson's equation is solved analytically for appropriate boundary conditions using separation of variables technique. The solution is then extended to obtain the threshold voltage of the FDSOI MOSFET. The model is able to handle any kind of non-uniform doping, viz. vertical, lateral as well as laterally asymetric channel (LAC) profile in the SOI film in addition to the DMG structure. The analytical results are validated with the numerical simulations using the device simulator MEDICI.

  19. Silver-doped metal layers for medical applications

    International Nuclear Information System (INIS)

    Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M

    2014-01-01

    Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316 L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 to 4.32 at% for steel and from 3.04 to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficiency (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using a scratch test. The antibacterial efficiency changed with silver doping up to 99.9 %. Our investigation was focused on the minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness. (paper)

  20. Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors

    Directory of Open Access Journals (Sweden)

    S. Maikap

    2011-01-01

    Full Text Available Physical and memory characteristics of the atomic-layer-deposited RuOx metal nanocrystal capacitors in an n-Si/SiO2/HfO2/RuOx/Al2O3/Pt structure with different postdeposition annealing temperatures from 850–1000°C have been investigated. The RuOx metal nanocrystals with an average diameter of 7 nm and a highdensity of 0.7 × 1012/cm2 are observed by high-resolution transmission electron microscopy after a postdeposition annealing temperature at 1000°C. The density of RuOx nanocrystal is decreased (slightly by increasing the annealing temperatures, due to agglomeration of multiple nanocrystals. The RuO3 nanocrystals and Hf-silicate layer at the SiO2/HfO2 interface are confirmed by X-ray photoelectron spectroscopy. For post-deposition annealing temperature of 1000°C, the memory capacitors with a small equivalent oxide thickness of ~9 nm possess a large hysteresis memory window of >5 V at a small sweeping gate voltage of ±5 V. A promising memory window under a small sweeping gate voltage of ~3 V is also observed due to charge trapping in the RuOx metal nanocrystals. The program/erase mechanism is modified Fowler-Nordheim (F-N tunneling of the electrons and holes from Si substrate. The electrons and holes are trapped in the RuOx nanocrystals. Excellent program/erase endurance of 106 cycles and a large memory window of 4.3 V with a small charge loss of ~23% at 85°C are observed after 10 years of data retention time, due to the deep-level traps in the RuOx nanocrystals. The memory structure is very promising for future nanoscale nonvolatile memory applications.

  1. Novel doping alternatives for single-layer transition metal dichalcogenides

    Science.gov (United States)

    Onofrio, Nicolas; Guzman, David; Strachan, Alejandro

    2017-11-01

    Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

  2. Electronic self-organization in layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Ritschel, Tobias

    2015-10-30

    The interplay between different self-organized electronically ordered states and their relation to unconventional electronic properties like superconductivity constitutes one of the most exciting challenges of modern condensed matter physics. In the present thesis this issue is thoroughly investigated for the prototypical layered material 1T-TaS{sub 2} both experimentally and theoretically. At first the static charge density wave order in 1T-TaS{sub 2} is investigated as a function of pressure and temperature by means of X-ray diffraction. These data indeed reveal that the superconductivity in this material coexists with an inhomogeneous charge density wave on a macroscopic scale in real space. This result is fundamentally different from a previously proposed separation of superconducting and insulating regions in real space. Furthermore, the X-ray diffraction data uncover the important role of interlayer correlations in 1T-TaS{sub 2}. Based on the detailed insights into the charge density wave structure obtained by the X-ray diffraction experiments, density functional theory models are deduced in order to describe the electronic structure of 1T-TaS{sub 2} in the second part of this thesis. As opposed to most previous studies, these calculations take the three-dimensional character of the charge density wave into account. Indeed the electronic structure calculations uncover complex orbital textures, which are interwoven with the charge density wave order and cause dramatic differences in the electronic structure depending on the alignment of the orbitals between neighboring layers. Furthermore, it is demonstrated that these orbital-mediated effects provide a route to drive semiconductor-to-metal transitions with technologically pertinent gaps and on ultrafast timescales. These results are particularly relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides. The discovery of orbital textures

  3. ABOUT THE WAYS OF THE SYSTEM ANALYSIS OF METAL MOVEMENT IN GATING SYSTEMS BASED ON THE NUMERICAL SOLUTIONS OF NAVIER-STOKES EQUATIONS

    Directory of Open Access Journals (Sweden)

    S. G. Lizouzov

    2014-01-01

    Full Text Available Numerical modeling of distribution of the fields of speeds projections on axes X, Y, Z in gating system with the casting “Case of conical pair” for various temporal values is carried out. Numerical criteria for assessment of metal movement through the feeders having various spatial location relative to the gating system are offered. Dynamics of change of the offered criteria on the basis of integral average value of the speed component on axes X, Y, Z in the gating systems at the outlet from feeder is calculated.

  4. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

    Science.gov (United States)

    Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

    2015-12-01

    A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

  5. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

    Science.gov (United States)

    Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

    2015-12-17

    A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

  6. N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

    International Nuclear Information System (INIS)

    Tanida, Shinji; Noda, Kei; Kawabata, Hiroshi; Matsushige, Kazumi

    2009-01-01

    N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO 2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO 2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO 2 surface.

  7. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    International Nuclear Information System (INIS)

    Hahn, Herwig; Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-01-01

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10 13  cm –2 allowing to considerably shift the threshold voltage to more positive values

  8. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  9. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    OpenAIRE

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  10. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

    Science.gov (United States)

    Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

    2017-06-14

    We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

  11. Inorganic-Organic Coating via Molecular Layer Deposition Enables Long Life Sodium Metal Anode.

    Science.gov (United States)

    Zhao, Yang; Goncharova, Lyudmila V; Zhang, Qian; Kaghazchi, Payam; Sun, Qian; Lushington, Andrew; Wang, Biqiong; Li, Ruying; Sun, Xueliang

    2017-09-13

    Metallic Na anode is considered as a promising alternative candidate for Na ion batteries (NIBs) and Na metal batteries (NMBs) due to its high specific capacity, and low potential. However, the unstable solid electrolyte interphase layer caused by serious corrosion and reaction in electrolyte will lead to big challenges, including dendrite growth, low Coulombic efficiency and even safety issues. In this paper, we first demonstrate the inorganic-organic coating via advanced molecular layer deposition (alucone) as a protective layer for metallic Na anode. By protecting Na anode with controllable alucone layer, the dendrites and mossy Na formation have been effectively suppressed and the lifetime has been significantly improved. Moreover, the molecular layer deposition alucone coating shows better performances than the atomic layer deposition Al 2 O 3 coating. The novel design of molecular layer deposition protected Na metal anode may bring in new opportunities to the realization of the next-generation high energy-density NIBs and NMBs.

  12. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  13. Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

    Science.gov (United States)

    Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

    2008-11-01

    In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

  14. Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

    Science.gov (United States)

    Zamani, Davoud

    ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources

  15. The Aharonov-Bohm effect in a side-gated graphene ring

    International Nuclear Information System (INIS)

    Huefner, Magdalena; Molitor, Francoise; Jacobsen, Arnhild; Pioda, Alessandro; Stampfer, Christoph; Ensslin, Klaus; Ihn, Thomas

    2010-01-01

    We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of π in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be interpreted within existing models for 'dirty metals'.

  16. An organic water-gated ambipolar transistor with a bulk heterojunction active layer for stable and tunable photodetection

    Science.gov (United States)

    Xu, Haihua; Zhu, Qingqing; Wu, Tongyuan; Chen, Wenwen; Zhou, Guodong; Li, Jun; Zhang, Huisheng; Zhao, Ni

    2016-11-01

    Organic water-gated transistors (OWGTs) have emerged as promising sensing architectures for biomedical applications and environmental monitoring due to their ability of in-situ detection of biological substances with high sensitivity and low operation voltage, as well as compatibility with various read-out circuits. Tremendous progress has been made in the development of p-type OWGTs. However, achieving stable n-type operation in OWGTs due to the presence of solvated oxygen in water is still challenging. Here, we report an ambipolar OWGT based on a bulk heterojunction active layer, which exhibits a stable hole and electron transport when exposed to aqueous environment. The device can be used as a photodetector both in the hole and electron accumulation regions to yield a maximum responsivity of 0.87 A W-1. More importantly, the device exhibited stable static and dynamic photodetection even when operated in the n-type mode. These findings bring possibilities for the device to be adopted for future biosensing platforms, which are fully compatible with low-cost and low-power organic complementary circuits.

  17. Methanogens predominate in natural corrosion protective layers on metal sheet piles.

    NARCIS (Netherlands)

    Kip, Nardy; Jansen, S.; Leite, M.F.A.; De Hollander, M.; Afanasyev, M.; Kuramae, E.E.; van Veen, J.A.

    2017-01-01

    Microorganisms are able to cause, but also to inhibit or protect against corrosion. Corrosion inhibition by microbial processes may be due to the formation of mineral deposition layers on metal objects. Such deposition layers have been found in archaeological studies on ancient metal objects, buried

  18. Spray coating of self-aligning passivation layer for metal grid lines

    NARCIS (Netherlands)

    Vuorinen, T.; Janka, M.; Rubingh, J.E.J.M.; Tuukkanen, S.; Groen, P.; Lupo, D.

    2014-01-01

    In applications such as organic light emitting diodes (OLEDs) or photovoltaic cells a homogenous voltage distribution in the large anode layer needs to be ensured by including a metal grid with a transparent conductor layer. To ensure sufficient conductivity, relatively thick metal lines are used,

  19. Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

    Science.gov (United States)

    Byun, Young-Chul; Lee, Jae-Gil; Meng, Xin; Lee, Joy S.; Lucero, Antonio T.; Kim, Si Joon; Young, Chadwin D.; Kim, Moon J.; Kim, Jiyoung

    2017-08-01

    In this paper, the effect of atomic layer deposited ZrO2 gate dielectrics, deposited at low temperature (100 °C), on the characteristics of recessed-gate High Electron Mobility Transistors (HEMTs) on Al0.25Ga0.75N/GaN/Si is investigated and compared with the characteristics of those with ZrO2 films deposited at typical atomic layer deposited (ALD) process temperatures (250 °C). Negligible hysteresis (ΔVth 4 V), and low interfacial state density (Dit = 3.69 × 1011 eV-1 cm-2) were observed on recessed gate HEMTs with ˜5 nm ALD-ZrO2 films grown at 100 °C. The excellent properties of recessed gate HEMTs are due to the absence of an interfacial layer and an amorphous phase of the film. An interfacial layer between 250 °C-ZrO2 and GaN is observed via high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. However, 100 °C-ZrO2 and GaN shows no significant interfacial layer formation. Moreover, while 100 °C-ZrO2 films maintain an amorphous phase on either substrate (GaN and Si), 250 °C-ZrO2 films exhibit a polycrystalline-phase when deposited on GaN and an amorphous phase when deposited on Si. Contrary to popular belief, the low-temperature ALD process for ZrO2 results in excellent HEMT performance.

  20. Ambipolar field-effect transistors by few-layer InSe with asymmetry contact metals

    Directory of Open Access Journals (Sweden)

    Chang-Yu Lin

    2017-07-01

    Full Text Available Group IIIA−VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties. In this study, we demonstrated that metal and InSe junctions can lead to carrier behaviors in few-layered InSe FETs. These results indicate that the polarity of few-layered InSe FETs can be determined by using metals with different work functions. We adopted FET S/D metal contacts with asymmetric work functions to reduce the Schottky barriers of electrons and holes, and discovered that few-layered InSe FETs with carefully selected metal contacts can achieve ambipolar behaviors. These results indicate that group IIIA−VIA layered semiconductor FETs with asymmetry contact metals have great potential for applications in photovoltaic devices, optical sensors, and CMOS inverter circuits.

  1. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  2. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  3. Ductility prediction of substrate-supported metal layers based on rate-independent crystal plasticity theory

    Directory of Open Access Journals (Sweden)

    Akpama Holanyo K.

    2016-01-01

    Full Text Available In this paper, both the bifurcation theory and the initial imperfection approach are used to predict localized necking in substrate-supported metal layers. The self-consistent scale-transition scheme is used to derive the mechanical behavior of a representative volume element of the metal layer from the behavior of its microscopic constituents (the single crystals. The mechanical behavior of the elastomer substrate follows the neo-Hookean hyperelastic model. The adherence between the two layers is assumed to be perfect. Through numerical results, it is shown that the limit strains predicted by the initial imperfection approach tend towards the bifurcation predictions when the size of the geometric imperfection in the metal layer vanishes. Also, it is shown that the addition of an elastomer layer to a metal layer enhances ductility.

  4. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  5. Gate-voltage control of equal-spin Andreev reflection in half-metal/semiconductor/superconductor junctions

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xiuqiang, E-mail: xianqiangzhe@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Meng, Hao, E-mail: menghao1982@shu.edu.cn [School of Physics and Telecommunication Engineering, Shanxi University of Technology, Hanzhong 723001 (China)

    2016-04-22

    With the Blonder–Tinkham–Klapwijk (BTK) approach, we investigate conductance spectrum in Ferromagnet/Semiconductor/Superconductor (FM/Sm/SC) double tunnel junctions where strong Rashba spin–orbit interaction (RSOI) is taken into account in semiconductors. For the half-metal limit, we find that the in-gap conductance becomes finite except at zero voltage when inserting a ferromagnetic insulator (FI) at the Sm/SC interface, which means that the appearance of a long-range triplet states in the half-metal. This is because of the emergence of the unconventional equal-spin Andreev reflection (ESAR). When the FI locates at the FM/Sm interface, however, we find the vanishing in-gap conductance due to the absence of the ESAR. Moreover, the non-zero in-gap conductance shows a nonmonotonic dependence on RSOI which can be controlled by applying an external gate voltage. Our results can be used to generate and manipulate the long-range spin triplet correlation in the nascent field of superconducting spintronics. - Highlights: • We study the equal-spin Andreev reflection in half-metal/semiconductor/superconductor (HM/Sm/SC) junctions. • The equal-spin Andreev reflection appearance when inserting a ferromagnetic insulator at the Sm/SC interface. • The finite in-gap conductance is attributed to the emergence of the equal-spin Andreev reflection. • The finite in-gap conductance shows a nonmonotonic dependence on Rashba spin–orbit interaction. • The finite in-gap conductance can be controlled by applying an external gate voltage.

  6. Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tu, Chun-Hao; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang

    2011-01-01

    In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost passivation layer of sol–gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.

  7. Metal droplet erosion and shielding plasma layer under plasma flows typical of transient processes in tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Martynenko, Yu. V., E-mail: Martynenko-YV@nrcki.ru [National Research Nuclear University “MEPhI” (Russian Federation)

    2017-03-15

    It is shown that the shielding plasma layer and metal droplet erosion in tokamaks are closely interrelated, because shielding plasma forms from the evaporated metal droplets, while droplet erosion is caused by the shielding plasma flow over the melted metal surface. Analysis of experimental data and theoretical models of these processes is presented.

  8. Asymmetric polymeric membranes containing a metal-rich dense layer with a controlled thickness and method of making same

    KAUST Repository

    Peinemann, Klaus-Viktor; Villalobos, Vazquez De La Parra Luis Francisco

    2016-01-01

    A structure, and methods of making the structure are provided in which the structure can include: a membrane having a first layer and a second layer, the first layer comprising polymer chains formed with coordination complexes with metal ions, and the second layer consisting of a porous support layer formed of polymer chains substantially, if not completely, lacking the presence of metal ions. The structure can be an asymmetric polymeric membrane containing a metal-rich layer as the first layer. In various embodiments the first layer can be a metal-rich dense layer. The first layer can include pores. The polymer chains of the first layer can be closely packed. The second layer can include a plurality of macro voids and can have an absence of the metal ions of the first layer.

  9. Asymmetric polymeric membranes containing a metal-rich dense layer with a controlled thickness and method of making same

    KAUST Repository

    Peinemann, Klaus-Viktor

    2016-01-21

    A structure, and methods of making the structure are provided in which the structure can include: a membrane having a first layer and a second layer, the first layer comprising polymer chains formed with coordination complexes with metal ions, and the second layer consisting of a porous support layer formed of polymer chains substantially, if not completely, lacking the presence of metal ions. The structure can be an asymmetric polymeric membrane containing a metal-rich layer as the first layer. In various embodiments the first layer can be a metal-rich dense layer. The first layer can include pores. The polymer chains of the first layer can be closely packed. The second layer can include a plurality of macro voids and can have an absence of the metal ions of the first layer.

  10. Fabrication of Polymer Solar Cells Using Aqueous Processing for All Layers Including the Metal Back Electrode

    DEFF Research Database (Denmark)

    Søndergaard, Roar; Helgesen, Martin; Jørgensen, Mikkel

    2011-01-01

    The challenges of printing all layers in polymer solar cells from aqueous solution are met by design of inks for the electron-, hole-, active-, and metallic back electrode-layers. The conversion of each layer to an insoluble state after printing enables multilayer formation from the same solvent...

  11. Solid-gate control of insulator to 2D metal transition at SrTiO3 surface

    Science.gov (United States)

    Schulman, Alejandro; Stoliar, Pablo; Kitoh, Ai; Rozenberg, Marcelo; Inoue, Isao H.

    As miniaturization of the semiconductor transistor approaches its limit, semiconductor industries are facing a major challenge to extend information processing beyond what can be attainable by conventional Si-based transistors. Innovative combinations of new materials and new processing platforms are desired. Recent discovery of the 2D electron gas (2DEG) at the surface of SrTiO3 (STO) and its electrostatic control, have carried it to the top of promising materials to be utilized in innovative devices. We report an electrostatic control of the carrier density of the 2DEG formed at the channel of bilayer-gated STO field-effect devices. By applying a gate electric field at room temperature, its highly insulating channel exhibits a transition to metallic one. This transition is accompanied by non-monotonic voltage-gain transfer characteristic with both negative and positive slope regions and unexpected enhancement of the sheet carrier density. We will introduce a numerical model to rationalize the observed features in terms of the established physics of field-effect transistors and the physics of percolation. Furthermore, we have found a clear signature of a Kondo effect that arises due to the interaction between the dilute 2DEG and localized Ti 3d orbitals originated by oxygen vacancies near the channel. On leave from CIC nanoGUNE, Spain.

  12. Electrical manipulation of spin states in a single electrostatically gated transition-metal complex

    DEFF Research Database (Denmark)

    Osorio, Edgar A; Moth-Poulsen, Kasper; van der Zant, Herre S J

    2010-01-01

    -field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also...... a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model....

  13. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  14. A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

    Science.gov (United States)

    Priya, Anjali; Mishra, Ram Awadh

    2016-04-01

    In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

  15. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.

    Science.gov (United States)

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-02-18

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

  16. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

    Science.gov (United States)

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-02-01

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

  17. Fabrication of metallic nanomasks by transfer of self-organized nanodot patterns from semiconductor material into thin metallic layers

    International Nuclear Information System (INIS)

    Bobek, T.; Kurz, H.

    2007-01-01

    The basic understanding of the formation of highly regular nanostructures during ion erosion of amorphous GaSb layers is revised. The essential physical parameters for the formation of the highly regular dot pattern are discussed. Numerical modelling based on the stabilized isotropic Kuramoto-Sivashinsky equation is presented and discussed. The experimental part of this contribution presents the successful pattern transfer into metallic buried thin layers as well as into Silicon underlayers. The critical conditions for this transfer technique are discussed. Application potential of using this self-organization scheme for the generation of highly regular patterns in ferromagnetic metal layers as well as in crystalline silicon is estimated

  18. Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

    Science.gov (United States)

    Palumbo, F.; Pazos, S.; Aguirre, F.; Winter, R.; Krylov, I.; Eizenberg, M.

    2017-06-01

    The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution. At the present, he is a research staff of the National Council of Science and Technology (CONICET), working in the National Commission of Atomic Energy (CNEA) in Buenos Aires, Argentina, well embedded within international research collaboration. Since 2008, he is Professor at the National Technological University (UTN) in Buenos Aires, Argentina. Dr. Palumbo has received research fellowships from: Marie Curie Fellowship within the 7th European Community Framework Programme, Abdus Salam International Centre for Theoretical Physics (ICTP) Italy, National Council of Science and Technology (CONICET) Argentina, and Consiglio Nazionale delle Ricerche (CNR) Italy. He is also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, Minatec Grenoble-France, the Autonomous University of Barcelona-Spain, and the Israel Institute of Technology-Technion. He has authored and co-authored more than 50 papers in international conferences and journals.

  19. Sensitivity enhancement of metal oxide thin film transistor with back gate biasing

    NARCIS (Netherlands)

    Dam, V.A.T.; Blauw, M.A.; Brongersma, S.H.; Crego-Calama, M.

    2011-01-01

    In this work, a room-temperature sensing device for detecting carbon monoxide using a ZnO thin film is presented. The ZnO layer (thickness close to the Debye length), which has a polycrystalline structure, is deposited with atomic-layer deposition (ALD) on an Al2O3/Si substrate. The operating

  20. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

    International Nuclear Information System (INIS)

    Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

    2011-01-01

    (Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

  1. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.; Hedhili, Mohamed N.; Wang, H.; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2012-01-01

    measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which

  2. Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

    Science.gov (United States)

    Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

    1994-01-01

    Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

  3. Diverse and tunable electronic structures of single-layer metal phosphorus trichalcogenides for photocatalytic water splitting

    International Nuclear Information System (INIS)

    Liu, Jian; Li, Xi-Bo; Wang, Da; Liu, Li-Min; Lau, Woon-Ming; Peng, Ping

    2014-01-01

    The family of bulk metal phosphorus trichalcogenides (APX 3 , A = M II , M 0.5 I M 0.5 III ; X = S, Se; M I , M II , and M III represent Group-I, Group-II, and Group-III metals, respectively) has attracted great attentions because such materials not only own magnetic and ferroelectric properties, but also exhibit excellent properties in hydrogen storage and lithium battery because of the layered structures. Many layered materials have been exfoliated into two-dimensional (2D) materials, and they show distinct electronic properties compared with their bulks. Here we present a systematical study of single-layer metal phosphorus trichalcogenides by density functional theory calculations. The results show that the single layer metal phosphorus trichalcogenides have very low formation energies, which indicates that the exfoliation of single layer APX 3 should not be difficult. The family of single layer metal phosphorus trichalcogenides exhibits a large range of band gaps from 1.77 to 3.94 eV, and the electronic structures are greatly affected by the metal or the chalcogenide atoms. The calculated band edges of metal phosphorus trichalcogenides further reveal that single-layer ZnPSe 3 , CdPSe 3 , Ag 0.5 Sc 0.5 PSe 3 , and Ag 0.5 In 0.5 PX 3 (X = S and Se) have both suitable band gaps for visible-light driving and sufficient over-potentials for water splitting. More fascinatingly, single-layer Ag 0.5 Sc 0.5 PSe 3 is a direct band gap semiconductor, and the calculated optical absorption further convinces that such materials own outstanding properties for light absorption. Such results demonstrate that the single layer metal phosphorus trichalcogenides own high stability, versatile electronic properties, and high optical absorption, thus such materials have great chances to be high efficient photocatalysts for water-splitting

  4. Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses

    Science.gov (United States)

    Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.

    2018-05-01

    The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.

  5. The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Chang, A.C.K.; Ross, I.M.; Norris, D.J.; Cullis, A.G.; Tang, Y.T.; Cerrina, C.; Evans, A.G.R.

    2006-01-01

    In this study we have highlighted the effect of non-uniform channel layer growth by the direct correlation of the microstructure and electrical characteristics in state-of-the-art pseudomorphic Si/SiGe p-channel metal oxide semiconductor field effect transistor devices fabricated on Si. Two nominally identical sets of devices from adjacent locations of the same wafer were found to have radically different distributions in gate threshold voltages. Due to the close proximity and narrow gate length of the devices, focused ion beam milling was used to prepare a number of thin cross-sections from each of the two regions for subsequent analysis using transmission electron microscopy. It was found that devices from the region giving a very narrow range of gate threshold voltages exhibited a uniform microstructure in general agreement with the intended growth parameters. However, in the second region, which showed a large spread in the gate threshold voltages, profound anomalies in the microstructure were observed. These anomalies consisted of fluctuations in the quality and thickness of the SiGe strained layers. The non-uniform growth of the strained SiGe layer clearly accounted for the poorly controlled threshold voltages of these devices. The results emphasize the importance of good layer growth uniformity to ensure optimum device yield

  6. A two layer coating system for metallic substrates

    International Nuclear Information System (INIS)

    1979-01-01

    Plasma deposited cermet coatings are used for protecting components in sodium or helium cooled reactors. An inner layer of cermet made from a powder mixture of chromium carbide and a nickel -20% chromium and an outer layer of chromium carbide is preferred. (UK)

  7. Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

    KAUST Repository

    Cheng, Yingchun; Zhang, Q. Y.; Schwingenschlö gl, Udo

    2014-01-01

    We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we

  8. Extended Solution Gate OFET-based Biosensor for Label-free Glial Fibrillary Acidic Protein Detection with Polyethylene Glycol-Containing Bioreceptor Layer.

    Science.gov (United States)

    Song, Jian; Dailey, Jennifer; Li, Hui; Jang, Hyun-June; Zhang, Pengfei; Wang, Jeff Tza-Huei; Everett, Allen D; Katz, Howard E

    2017-05-25

    A novel organic field effect transistor (OFET) -based biosensor is described for label-free glial fibrillary acidic protein (GFAP) detection. We report the first use of an extended solution gate structure where the sensing area and the organic semiconductor are separated, and a reference electrode is not needed. Different molecular weight polyethylene glycols (PEGs) are mixed into the bio-receptor layer to help extend the Debye screening length. The drain current change was significantly increased with the help of higher molecular weight PEGs, as they are known to reduce the dielectric constant. We also investigated the sensing performance under different gate voltage (V g ). The sensitivity increased after we decreased V g from -5 V to -2 V, because the lower V g is much closer to the OFET threshold voltage and the influence of attached negatively charged proteins become more apparent. Finally, the selectivity experiments toward different interferents were performed. The stability and selectivity are promising for clinical applications.

  9. All-solution-processed bottom-gate organic thin-film transistor with improved subthreshold behaviour using functionalized pentacene active layer

    International Nuclear Information System (INIS)

    Kim, Jinwoo; Jeong, Jaewook; Cho, Hyun Duk; Lee, Changhee; Hong, Yongtaek; Kim, Seul Ong; Kwon, Soon-Ki

    2009-01-01

    We report organic thin-film transistors (OTFTs) made by simple solution processes in an ambient air environment. Inkjet-printed silver electrodes were used for bottom-gate and bottom-contacted source/drain electrodes. A spin-coated cross-linked poly(4-vinylphenol) (PVP) and a spin-coated 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) were used as a gate dielectric layer and an active layer, respectively. A high-boiling-point solvent was used for TIPS-pentacene and the resulting film showed stem-like morphology. X-ray diffraction (XRD) measurement showed the spin-coated active layer was well crystallized, showing the (0 0 1) plane. The reasonable mobility, on/off ratio and threshold voltage of the fabricated device, which are comparable to those of the previously reported TIPS-pentacene OTFT with gold electrodes, show that the printed silver electrodes worked successfully as gate and source/drain electrodes. Furthermore, the device showed a subthreshold slope of 0.61 V/dec in the linear region (V DS = -5 V), which is the lowest value for spin-coated TIPS-pentacene TFT ever reported, and much lower than that of the thermally evaporated pentacene OTFTs. It is thought that the surface energy of the PVP dielectric layer is well matched with that of a well-ordered TIPS-pentacene (0 0 1) surface when a high-boiling-point solvent and a low-temperature drying process are used, thereby making good interface properties, and showing higher performances than those for pentacene TFT with the same structure.

  10. ZnO buffer layer for metal films on silicon substrates

    Science.gov (United States)

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  11. Improvement of corrosion resistance of transparent conductive multilayer coating consisting of silver layers and transparent metal oxide layers

    International Nuclear Information System (INIS)

    Koike, Katsuhiko; Yamazaki, Fumiharu; Okamura, Tomoyuki; Fukuda, Shin

    2007-01-01

    An optical filter for plasma display panel (PDP) requires an electromagnetic shield with very high ability. The authors investigated a transparent conductive multilayer coating consisting of silver (Ag) layers and transparent metal oxide layers. The durability of the multilayer sputter coating, including the silver layer, is very sensitive to the surrounding atmosphere. For example, after an exposure test they found discolored points on the multilayer sputter coatings, possibly caused by migration of silver atoms in the silver layers. In their investigation, they modified the top surface of the multilayer sputter coatings with transition metals to improve the corrosion resistance of the multilayer coating. Specifically, they deposited transition metals 0.5-2 nm thick on the top surface of the multilayer coatings by sputtering. They chose indium tin oxide (ITO) as the transparent metal oxide. They applied the multilayer sputter coatings of seven layers to a polyethylene terephthalate (PET) film substrate. A cross-sectional structure of the film with the multilayer coatings is PET film/ITO/Ag/ITO/Ag/ITO/Ag/ITO. They evaluated the corrosion resistance of the films by a salt-water immersion test. In the test, they immersed the film with multilayer coatings into salt water, and then evaluated the appearance, transmittance, and electrical resistance of the multilayer coatings. They investigated several transition metals as the modifying material, and found that titanium and tantalum drastically improved the resistance of the multilayer coatings to the salt-water exposure without a significant decline in transmittance. They also investigated the relation between elapsed time after deposition of the modifying materials and resistance to the salt water. Furthermore, they investigated the effects of a heat treatment and an oxide plasma treatment on resistance to the salt water

  12. Strain rate effects on localized necking in substrate-supported metal layers

    OpenAIRE

    BEN BETTAIEB, Mohamed; ABED-MERAIM, Farid

    2017-01-01

    Due to their good mechanical and technological performances, thin substrate-supported metal layers are increasingly used as functional components in flexible electronic devices. Consequently, the prediction of necking, and the associated limit strains, for such components is of major academic and industrial importance. The current contribution aims to numerically investigate the respective and combined effects of strain rate sensitivity of the metal layer and the addition of an elastomer l...

  13. Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

    2011-10-01

    The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

  14. Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

    International Nuclear Information System (INIS)

    Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

    2011-01-01

    The impact of iridium-oxide (IrO x ) nano layer thickness on the tunneling oxide and memory performance of IrO x metal nanocrystals in an n-Si/SiO 2 /Al 2 O 3 /IrO x /Al 2 O 3 /IrO x structure has been investigated. A thinner (1.5 nm) IrO x nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO x nanocrystals with a small average diameter of 2.4 nm and a high density of ∼2 x 10 12 /cm 2 have been observed by scanning transmission electron microscopy. The IrO x nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of ±5 V and 7.2 V at a sweeping gate voltage of ± 8 V has been observed for the 1.5 nm-thick IrO x nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO x nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10 13 /cm 2 and 2 x 10 13 /cm 2 , respectively, due to the small size and high-density of IrO x nanocrystals. Excellent program/erase endurance of >10 6 cycles and good retention of 10 4 s with a good memory window of >1.2 V under a small operation voltage of ± 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO x nanocrystals. This study is not only important for the IrO x nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

  15. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

    Science.gov (United States)

    Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

    2017-12-01

    X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

  16. Scanning gate microscopy on graphene: charge inhomogeneity and extrinsic doping

    International Nuclear Information System (INIS)

    Jalilian, Romaneh; Tian Jifa; Chen, Yong P; Jauregui, Luis A; Lopez, Gabriel; Roecker, Caleb; Jovanovic, Igor; Yazdanpanah, Mehdi M; Cohn, Robert W

    2011-01-01

    We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET) using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the response of graphene resistance to the tip voltage shows significant variation with tip position, and SGM imaging displays mesoscopic domains of electron-doped and hole-doped regions. Our measurements reveal substantial spatial fluctuation in the carrier density in graphene due to extrinsic local doping from sources such as metal contacts, graphene edges, structural defects and resist residues. Our scanning gate measurements also demonstrate graphene's excellent capability to sense the local electric field and charges.

  17. Passivation of a Metal Contact with a Tunneling Layer

    DEFF Research Database (Denmark)

    Loozen, X.; Larsen, J.B.; Dross, F.

    2011-01-01

    The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion...... of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm Al...

  18. Dynamic partitioning of nanoparticulate metal species between gel layers and aqueous media

    NARCIS (Netherlands)

    Veeken, van der P.L.R.

    2010-01-01

    This thesis deals with several aspects of the use of Diffusive Gradient in Thin film (DGT) and Diffusive Equilibriation in Thin film (DET) in dynamic metal speciation analysis. It has a clear focus on the properties of the diffusive gel layer, and their possible impact on metal speciation

  19. Atomic layer deposition to prevent metal transfer from implants: An X-ray fluorescence study

    Energy Technology Data Exchange (ETDEWEB)

    Bilo, Fabjola [INSTM and Chemistry for Technologies Laboratory, University of Brescia, via Branze, 38, 25123 Brescia (Italy); Borgese, Laura, E-mail: laura.borgese@unibs.itl [INSTM and Chemistry for Technologies Laboratory, University of Brescia, via Branze, 38, 25123 Brescia (Italy); Prost, Josef; Rauwolf, Mirjam; Turyanskaya, Anna; Wobrauschek, Peter; Kregsamer, Peter; Streli, Christina [Atominstitut, TU Wien, Stadionallee 2, 1020 Vienna (Austria); Pazzaglia, Ugo [Dipartimento Specialità Medico Chirurgiche Sc. Radiol. e Sanità Pubblica, University of Brescia, v.le Europa, 11, 25121 Brescia (Italy); Depero, Laura E. [INSTM and Chemistry for Technologies Laboratory, University of Brescia, via Branze, 38, 25123 Brescia (Italy)

    2015-12-30

    Highlights: • Co and Cr migrate from bare alloy implant to the surrounding tissue showing a cluster distribution. • Co and Cr migrate from the TiO{sub 2} coated implant to the surrounding tissue showing a decreasing gradient distribution from the alloy surface. • TiO{sub 2} coating layers obtained by ALD on Co–Cr alloy show a barrier effect for the migration of metals. • The thicker the TiO{sub 2} layer deposited by ALD, the lower the metal migration. • The migration of metals from bare alloy toward the surrounding tissue increases with time. This effect is not detected in the coated samples. - Abstract: We show that Atomic Layer Deposition is a suitable coating technique to prevent metal diffusion from medical implants. The metal distribution in animal bone tissue with inserted bare and coated Co–Cr alloys was evaluated by means of micro X-ray fluorescence mapping. In the uncoated implant, the migration of Co and Cr particles from the bare alloy in the biological tissues is observed just after one month and the number of particles significantly increases after two months. In contrast, no metal diffusion was detected in the implant coated with TiO{sub 2}. Instead, a gradient distribution of the metals was found, from the alloy surface going into the tissue. No significant change was detected after two months of aging. As expected, the thicker is the TiO{sub 2} layer, the lower is the metal migration.

  20. First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

    International Nuclear Information System (INIS)

    Mao, L.F.; Wang, Z.O.

    2008-01-01

    HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Sliding wear resistance of metal matrix composite layers prepared by high power laser

    NARCIS (Netherlands)

    Ocelik, Vaclav; Matthews, D; de Hosson, Jeff

    2005-01-01

    Two laser surface engineering techniques, Laser Cladding and Laser Melt Injection (LMI), were used to prepare three different metal matrix composite layers with a thickness of about 1 mm and approximately 25-30% volume fraction of ceramic particles. SiC/Al-8Si, WC/Ti-6Al-4V and TiB2/Ti-6Al-4V layers

  2. Using thin metal layers on composite structures for shielding the electromagnetic pulse caused by nearby lightning

    NARCIS (Netherlands)

    Blaj, M.A.; Buesink, Frederik Johannes Karel; Damstra, G.C.; Leferink, Frank Bernardus Johannes

    2011-01-01

    Electronic systems in composite structures could be vulnerable to the (dominant magnetic) field caused by a lightning strike, because only thin layers of metal can be used on composite structures. Thin layers result in a very low shielding effectiveness against magnetic fields. Many experiments

  3. Characterization of Transition Metal Carbide Layers Synthesized by Thermo-reactive Diffusion Processes

    DEFF Research Database (Denmark)

    Laursen, Mads Brink; Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin

    2015-01-01

    . In this study halide-activated pack cementation techniques were used on tool steel Vanadis 6 and martensitic stainless steel AISI 420 in order to produce hard layers of titanium carbide (TiC), vanadium carbide (V8C7) and chromium carbides (Cr23C6 and Cr7C3). Surface layers were characterized by scanning......Hard wear resistant surface layers of transition metal carbides can be produced by thermo-reactive diffusion processes where interstitial elements from a steel substrate together with external sources of transition metals (Ti, V, Cr etc.) form hard carbide and/or nitride layers at the steel surface...... electron microscopy, X-ray diffraction and Vickers hardness testing. The study shows that porosityfree, homogenous and very hard surface layers can be produced by thermo-reactive diffusion processes. The carbon availability of the substrate influences thickness of obtained layers, as Vanadis 6 tool steel...

  4. Behaviour of ceramic and metallic layers in a H2O-H2S

    International Nuclear Information System (INIS)

    Furtuna, I.; Mihailescu, M.; Deaconu, M.; Dinu, A.; Cotolan, V; Nedelcu, L.; Titescu, Gh.

    1996-01-01

    In the installations for heavy water production there exist zones where the action of aggressive working conditions combined with a severe variable hydrodynamical regime lead to the destruction of the pyrite protecting layer. An alternating solution for the protection of these zones is to cover them with ceramic or metallic layers. This work presents the results of the preliminary tests on G28-52 steel samples, covered with ceramic and metallic layers, in the working environment (H 2 O-H 2 S) of the heavy water production installations and in severe hydrodynamical conditions. On the basis of the results obtained in the experiments and from the examination of the microstructure of the layers prior and after testing, a phenomenological model was developed to explain the behaviour of the deposed layers. On the basis of this model the conditions that the layers must satisfy have been deduced to improve their behaviour in the working environment

  5. In situ ceramic layer growth on coated fuel particles dispersed in a zirconium metal matrix

    Science.gov (United States)

    Terrani, K. A.; Silva, C. M.; Kiggans, J. O.; Cai, Z.; Shin, D.; Snead, L. L.

    2013-06-01

    The extent and nature of the chemical interaction between the outermost coating layer of coated fuel particles embedded in zirconium metal during fabrication of metal matrix microencapsulated fuels were examined. Various particles with outermost coating layers of pyrocarbon, SiC, and ZrC have been investigated in this study. ZrC-Zr interaction was the least substantial, while the PyC-Zr reaction can be exploited to produce a ZrC layer at the interface in an in situ manner. The thickness of the ZrC layer in the latter case can be controlled by adjusting the time and temperature during processing. The kinetics of ZrC layer growth is significantly faster from what is predicted using literature carbon diffusivity data in ZrC. SiC-Zr interaction is more complex and results in formation of various chemical phases in a layered aggregate morphology at the interface.

  6. Graphene layer encapsulated metal nanoparticles as a new type of non-precious metal catalysts for oxygen reduction

    DEFF Research Database (Denmark)

    Hu, Yang; Zhong, Lijie; Jensen, Jens Oluf

    2016-01-01

    Cheap and efficient non-precious metal catalysts for oxygen reduction have been a focus of research in the field of low-temperature fuel cells. This review is devoted to a brief summary of the recent work on a new type of catalysts, i.e., the graphene layer encapsulated metal nanoparticles....... The discussion is focused on the synthesis, structure, mechanism, performance, and further research....

  7. Determination of stable shapes of a thin liquid metal layer using a boundary integral method

    Energy Technology Data Exchange (ETDEWEB)

    Hinaje, M [Groupe de Recherche en Electrotechnique et Electronique de Nancy, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Vinsard, G [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Dufour, S [Groupe de Recherche en Electrotechnique et Electronique de Nancy, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France)

    2006-03-21

    This paper deals with a thin liquid metal layer submitted to an ac magnetic field. Experimentally, we have noticed that even if the system (inductor+liquid metal) is axisymmetric, when an ac magnetic field is applied the symmetry is broken. The observed deformations of the liquid metal are in three dimensions. Therefore, our aim is to investigate this deformation using a numerical method as boundary element method in three dimensions.

  8. Determination of stable shapes of a thin liquid metal layer using a boundary integral method

    International Nuclear Information System (INIS)

    Hinaje, M; Vinsard, G; Dufour, S

    2006-01-01

    This paper deals with a thin liquid metal layer submitted to an ac magnetic field. Experimentally, we have noticed that even if the system (inductor+liquid metal) is axisymmetric, when an ac magnetic field is applied the symmetry is broken. The observed deformations of the liquid metal are in three dimensions. Therefore, our aim is to investigate this deformation using a numerical method as boundary element method in three dimensions

  9. Computational investigation of the effects of barrier layers on the permeation of hydrogen through metals

    International Nuclear Information System (INIS)

    Perkins, W.G.

    1975-01-01

    Results of a computational investigation of the permeation behavior of oxide-coated metal membranes are presented. A steady-state permeation model was developed which promises to be useful in evaluation of oxide layers on metals as hydrogen permeation barriers. The pressure and thickness dependence of steady state permeation through oxide-coated metal membranes is described using plots of logarithmic functions. (U.S.)

  10. Plated copper front side metallization on printed seed-layers for silicon solar cells

    OpenAIRE

    Kraft, Achim

    2015-01-01

    A novel copper front side metallization architecture for silicon solar cells based on a fine printed silver seed-layer, plated with nickel, copper and silver, is investigated. The work focuses on the printing of fine seed-layers with low silver consumption, the corrosion of the printed seed-layers by the interaction with electrolyte solutions and the encapsulation material on module level and on the long term stability of the cells due to copper migration. The investigation of the correlation...

  11. Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene–graphene composite layers for flexible thin film transistors with a polymer gate dielectric

    International Nuclear Information System (INIS)

    Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

    2014-01-01

    Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene–graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene–graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm 2  V −1  s −1 and a threshold voltage of −0.7 V at V gs = −40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm 2  V −1  s −1 and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies. (paper)

  12. Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

    Science.gov (United States)

    Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

    2014-02-28

    Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

  13. Electron emission from a double-layer metal under femtosecond laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuchang; Li, Suyu; Jiang, Yuanfei; Chen, Anmin, E-mail: amchen@jlu.edu.cn; Ding, Dajun; Jin, Mingxing, E-mail: mxjin@jlu.edu.cn

    2015-01-01

    In this paper we theoretically investigate electron emission during femtosecond laser ablation of single-layer metal (copper) and double-layer structures. The double-layer structure is composed of a surface layer (copper) and a substrate layer (gold or chromium). The calculated results indicate that the double-layer structure brings a change to the electron emission from the copper surface. Compared with the ablation of a single-layer, a double-layer structure may be helpful to decrease the relaxation time of the electron temperature, and optimize the electron emission by diminishing the tailing phenomenon under the same absorbed laser fluence. With the increase of the absorbed laser fluence, the effect of optimization becomes significant. This study provides a way to optimize the electron emission which can be beneficial to generate laser induced ultrafast electron pulse sources.

  14. Influence of carbon monoxide to the surface layer of uranium metal and its oxides

    International Nuclear Information System (INIS)

    Wang Xiaoling; Fu Yibei; Xie Renshou; Huang Ruiliang

    1996-09-01

    The surface structures of uranium metal and triuranium octaoxide (U 3 O 8 ) and the influence of carbon monoxide to the surface layers have been studied by X-ray photoelectron spectroscopy (XPS). After exposure to carbon monoxide, contents of oxygen in the surface oxides of uranium metal and U 3 O 8 are decreased and O/U ratios decrease 7.2%, 8.0% respectively. The investigation indicated the surface layers of uranium metal and its oxides were forbidden to further oxidation in the atmosphere of carbon monoxide. (11 refs., 9 figs., 2 tabs.)

  15. Wear resistance of layers hard faced by the high-alloyed filler metal

    OpenAIRE

    Dušan Arsić; Vukić Lazić; Ruzica R. Nikolic; Milan Mutavdžić; Srbislav Aleksandrović; Milan Djordjević

    2016-01-01

    The objective of this work was to determine the wear resistance of layers hard faced by the high-alloyed filler metal, with or without the austenite inter-layer, on parts that operate at different sliding speeds in conditions without lubrication. The samples were hard faced with the filler metal E 10-UM-60-C with high content of C, Cr and W. Used filler metal belongs into group of alloys aimed for reparatory hard facing of parts damaged by abrasive and erosive wear and it is characterized by ...

  16. Study on the influence of carbon monoxide to the surface oxide layer of uranium metal

    International Nuclear Information System (INIS)

    Wang Xiaolin; Duan Rongliang; Fu Yibei; Xie Renshou; Zuo Changming; Zhao Chunpei; Chen Hong

    1997-01-01

    The influence of carbon monoxide to the surface oxide layer of uranium metal has been studied by X-ray photoelectron spectroscopy (XPS) and gas chromatography (GC). Carbon monoxide adsorption on the oxide layer resulted in U4f peak shifting to the lower binding energy. The content of oxygen in the oxide is decreased and the atomic ratio (O/U) is decreased by 7.2%. The amount of carbon dioxide in the atmosphere after the surface reaction is increased by 11.0%. The investigation indicates that the surface layer can prevent the further oxidation uranium metal in the atmosphere of carbon monoxide

  17. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. [Belarusian State University of Information and RadioElectronics (Belarus)

    2016-03-15

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  18. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    International Nuclear Information System (INIS)

    Chubenko, E. B.; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P.

    2016-01-01

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  19. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

    2007-01-01

    The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

  20. P-channel differential multiple-time programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

    Science.gov (United States)

    Wang, Tai-Min; Chien, Wei-Yu; Hsu, Chia-Ling; Lin, Chrong Jung; King, Ya-Chin

    2018-04-01

    In this paper, we present a new differential p-channel multiple-time programmable (MTP) memory cell that is fully compatible with advanced 16 nm CMOS fin field-effect transistors (FinFET) logic processes. This differential MTP cell stores complementary data in floating gates coupled by a slot contact structure, which make different read currents possible on a single cell. In nanoscale CMOS FinFET logic processes, the gate dielectric layer becomes too thin to retain charges inside floating gates for nonvolatile data storage. By using a differential architecture, the sensing window of the cell can be extended and maintained by an advanced blanket boost scheme. The charge retention problem in floating gate cells can be improved by periodic restoring lost charges when significant read window narrowing occurs. In addition to high programming efficiency, this p-channel MTP cells also exhibit good cycling endurance as well as disturbance immunity. The blanket boost scheme can remedy the charge loss problem under thin gate dielectrics.

  1. Generation Mechanism of Work Hardened Surface Layer in Metal Cutting

    Science.gov (United States)

    Hikiji, Rikio; Kondo, Eiji; Kawagoishi, Norio; Arai, Minoru

    Finish machining used to be carried out in grinding, but it is being replaced by cutting with very small undeformed chip thickness. In ultra precision process, the effects of the cutting conditions and the complicated factors on the machined surface integrity are the serious problems. In this research, work hardened surface layer was dealt with as an evaluation of the machined surface integrity and the effect of the mechanical factors on work hardening was investigated experimentally in orthogonal cutting. As a result, it was found that work hardened surface layer was affected not only by the shear angle varied under the cutting conditions and the thrust force of cutting resistance, but also by the thrust force acting point, the coefficient of the thrust force and the compressive stress equivalent to the bulk hardness. Furthermore, these mechanical factors acting on the depth of the work hardened surface layer were investigated with the calculation model.

  2. Application of the photomodulated reflectance technique to the monitoring of metal layers

    Energy Technology Data Exchange (ETDEWEB)

    Dobos, Gabor; Lenk, Sandor; Ujhelyi, Ferenc; Szita, Zsofia; Kocsanyi, Laszlo [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, 1111 Budapest (Hungary); Somogyi, Andras [Semilab Corporation, Prielle Kornelia ut 2, 1117 Budapest (Hungary)

    2011-09-15

    Photomodulated reflectance (PMR) measurement techniques are currently used for the monitoring of ultra-shallow junctions. This paper discusses the possibility of applying them to the characterisation of metal layers. A finite element method based computer model has been created to study the dependence of the PMR signal on different sample parameters. We present the results of these simulations and show that the method can be used to establish the thickness of a metal layer (if the material is known) and it can also provide information about the metal/semiconductor interface. This information might be used to characterise the barrier seed layer beneath the metal, by a non-contact and non-destructive way. Simulation results are also supported by actual measurements on test samples. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

    International Nuclear Information System (INIS)

    Wang Yan-Rong; Yang Hong; Xu Hao; Wang Xiao-Lei; Luo Wei-Chun; Qi Lu-Wei; Zhang Shu-Xiang; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D and A) cycles, the D and A time, and the total annealing time. The results show that the increases of the number of D and A cycles (from 1 to 2) and D and A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D and A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D and A times and numbers of D and A cycles induce different breakdown mechanisms. (paper)

  4. Analytical modelling of a thin liquid metal layer submitted to an ac magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Hinaje, M [Groupe de Recherche en Electrotechnique et Electronique de Nancy, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Vinsard, G [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Dufour, S [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France)

    2006-07-07

    A cylindrical thin liquid metal layer is submitted to a uniform ac magnetic field. When the intensity of the electromagnetic field exceeds a critical value, an opening in the liquid is shaped from outside to inside. At a given intensity of the electromagnetic field, this opening is in a frozen state, that is, the liquid metal layer reaches a new equilibrium shape. In this paper, we show that this equilibrium corresponds to a minimum of the total energy of the system. This total energy is equal to the sum of the magnetic energy and the mechanical energy. The magnetic energy is computed by assuming that the induced eddy current flowing through the liquid metal layer is concentrated in the cross-section S{sub c} equal to the product of the skin depth and the thickness of the layer. This assumption leads us to study an equivalent electrical circuit. The mechanical energy is composed of the potential energy and the surface energy.

  5. Analytical modelling of a thin liquid metal layer submitted to an ac magnetic field

    International Nuclear Information System (INIS)

    Hinaje, M; Vinsard, G; Dufour, S

    2006-01-01

    A cylindrical thin liquid metal layer is submitted to a uniform ac magnetic field. When the intensity of the electromagnetic field exceeds a critical value, an opening in the liquid is shaped from outside to inside. At a given intensity of the electromagnetic field, this opening is in a frozen state, that is, the liquid metal layer reaches a new equilibrium shape. In this paper, we show that this equilibrium corresponds to a minimum of the total energy of the system. This total energy is equal to the sum of the magnetic energy and the mechanical energy. The magnetic energy is computed by assuming that the induced eddy current flowing through the liquid metal layer is concentrated in the cross-section S c equal to the product of the skin depth and the thickness of the layer. This assumption leads us to study an equivalent electrical circuit. The mechanical energy is composed of the potential energy and the surface energy

  6. Ultra-thin Metal and Dielectric Layers for Nanophotonic Applications

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Leandro, Lorenzo; Malureanu, Radu

    2015-01-01

    In our talk we first give an overview of the various thin films used in the field of nanophotonics. Then we describe our own activity in fabrication and characterization of ultra-thin films of high quality. We particularly focus on uniform gold layers having thicknesses down to 6 nm fabricated by......-beam deposition on dielectric substrates and Al-oxides/Ti-oxides multilayers prepared by atomic layer deposition in high aspect ratio trenches. In the latter case we show more than 1:20 aspect ratio structures can be achieved....

  7. Silver-doped metal layers for medical applications

    Czech Academy of Sciences Publication Activity Database

    Kocourek, Tomáš; Jelínek, Miroslav; Mikšovský, Jan; Jurek, Karel; Weiserová, Marie

    2014-01-01

    Roč. 24, č. 8 (2014), s. 1-7, č. článku 085602. ISSN 1054-660X Institutional support: RVO:68378271 ; RVO:61388971 Keywords : silver -doped * layer * pulsed laser deposition * adhesion * antibacterial efficacy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.032, year: 2014

  8. Double layer effects in the electroreduction of transition metal ions

    Czech Academy of Sciences Publication Activity Database

    Fawcett, W. R.; Hromadová, Magdaléna

    2008-01-01

    Roč. 12, č. 4 (2008), s. 347-351 ISSN 1432-8488 R&D Projects: GA AV ČR KJB400400603; GA MŠk LC510 Institutional research plan: CEZ:AV0Z40400503 Keywords : sphere electrode reactions * crystal gold electrodes * diffuse double - layer Subject RIV: CG - Electrochemistry Impact factor: 1.597, year: 2008

  9. Modelling of Leakage Current Through Double Dielectric Gate Stack in Metal Oxide Semiconductor Capacitor

    International Nuclear Information System (INIS)

    Fatimah A Noor; Mikrajuddin Abdullah; Sukirno; Khairurrijal

    2008-01-01

    In this paper, we have derived analytical expression of leakage current through double barriers in Metal Oxide Semiconductor (MOS) capacitor. Initially, electron transmittance through the MOS capacitor was derived by including the coupling between the transverse and longitudinal energies. The transmittance was then employed to obtain leakage current through the double barrier. In this model, we observed the effect of electron velocity due to the coupling effect and the oxide thickness to the leakage current. The calculated results showed that the leakage current decreases as the electron velocity increases. (author)

  10. Metallic layer-by-layer photonic crystals for linearly-polarized thermal emission and thermophotovoltaic device including same

    Science.gov (United States)

    Lee, Jae-Hwang; Ho, Kai-Ming; Constant, Kristen P.

    2016-07-26

    Metallic thermal emitters consisting of two layers of differently structured nickel gratings on a homogeneous nickel layer are fabricated by soft lithography and studied for polarized thermal radiation. A thermal emitter in combination with a sub-wavelength grating shows a high extinction ratio, with a maximum value close to 5, in a wide mid-infrared range from 3.2 to 7.8 .mu.m, as well as high emissivity up to 0.65 at a wavelength of 3.7 .mu.m. All measurements show good agreement with theoretical predictions. Numerical simulations reveal that a high electric field exists within the localized air space surrounded by the gratings and the intensified electric-field is only observed for the polarizations perpendicular to the top sub-wavelength grating. This result suggests how the emissivity of a metal can be selectively enhanced at a certain range of wavelengths for a given polarization.

  11. Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

    Science.gov (United States)

    Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

    2016-04-13

    Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

  12. Metal layer mask patterning by force microscopy lithography

    International Nuclear Information System (INIS)

    Filho, H.D. Fonseca; Mauricio, M.H.P.; Ponciano, C.R.; Prioli, R.

    2004-01-01

    The nano-lithography of a metallic surface in air by atomic force microscopy while operated in contact mode and equipped with a diamond tip is presented. The aluminum mask was prepared by thermal deposition on arsenic sulfide films. The analysis of the scratches performed by the tip on the metallic mask show that the depth of the lithographed pattern increases with the increase of the applied normal force. The scanning velocity is also shown to influence the AFM patterning process. As the scanning velocity increases, the scratch depth and width decreases. Nano-indentations performed with the diamond tip show that the plastically deformed surface increases with the increase of the duration of the applied force. The use of the nano-lithography method to create nano-structures is discussed

  13. Metallic stereostructured layer: An approach for broadband polarization state manipulation

    International Nuclear Information System (INIS)

    Xiong, Xiang; Hu, Yuan-Sheng; Jiang, Shang-Chi; Hu, Yu-Hui; Fan, Ren-Hao; Ma, Guo-Bin; Shu, Da-Jun; Peng, Ru-Wen; Wang, Mu

    2014-01-01

    In this letter, we report a full-metallic broadband wave plate assembled by standing metallic L-shaped stereostructures (LSSs). We show that with an array of LSSs, high polarization conversion ratio is achieved within a broad frequency band. Moreover, by rotating the orientation of the array of LSSs, the electric components of the reflection beam in two orthogonal directions and their phase difference can be independently tuned. In this way, all the polarization states on the Poincaré sphere can be realized. As examples, the functionalities of a quarter wave plate and a half wave plate are experimentally demonstrated with both reflection spectra and focal-plane-array imaging. Our designing provides a unique approach in realizing the broadband wave plate to manipulate the polarization state of light

  14. High dose, heavy ion implantation into metals: the use of sacrificial surface layers to enhance retention

    International Nuclear Information System (INIS)

    Clapham, L.

    1994-01-01

    While of considerable interest for the production of metallic alloys, high dose, heavy ion implantation is highly problematical, since the process is limited by sputtering effects. Sputtering is less significant, however, for light target materials, such as C and Al. This paper summarizes studies involving the use of light materials (such as C and Al) which act as slowly sputtering ''sacrificial layers'' when deposited on metallic targets prior to heavy ion implantation. The use of C and Al sacrificial coatings has enabled implanted ion retentions of 100% to be obtained in a number of ion-metal target systems, where the retentions in uncoated samples were as low as 20%. Ion implantation invariably leads to mixing at the sacrificial layer-metal target interface. This mixing may be detrimental in certain systems, so it is useful to be able to minimize or remove this mixed region. To achieve this, a number of techniques have been investigated: (1) removal of the mixed region in the latter stages of the implant; (2) using a barrier layer or chemical effects to minimize mixing at the sacrificial layer-metal interface; (3) choosing a sacrificial layer material which forms a mixed region which has desirable properties. The results of these investigations, for a number of different ion-target systems, are outlined in this paper. (orig.)

  15. Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte

    Science.gov (United States)

    Guo, Junjie; Xie, Dingdong; Yang, Bingchu; Jiang, Jie

    2018-06-01

    Due to its mechanical flexibility, large bandgap and carrier mobility, atomically thin molybdenum disulphide (MoS2) has attracted widespread attention. However, it still lacks a facile route to fabricate a low-power high-performance logic gates/circuits before it gets the real application. Herein, we reported a facile and environment-friendly method to establish the low-power logic function in a single MoS2 field-effect transistor (FET) configuration gated with a polymer electrolyte. Such low-power and high-performance MoS2 FET can be implemented by using water-soluble polyvinyl alcohol (PVA) polymer as proton-conducting electric-double-layer (EDL) dielectric layer. It exhibited an ultra-low voltage (1.5 V) and a good performance with a high current on/off ratio (Ion/off) of 1 × 105, a large electron mobility (μ) of 47.5 cm2/V s, and a small subthreshold swing (S) of 0.26 V/dec, respectively. The inverter can be realized by using such a single MoS2 EDL FET with a gain of ∼4 at the operation voltage of only ∼1 V. Most importantly, the neuronal AND logic computing can be also demonstrated by using such a double-lateral-gate single MoS2 EDL transistor. These results show an effective step for future applications of 2D MoS2 FETs for integrated electronic engineering and low-energy environment-friendly green electronics.

  16. Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

    Science.gov (United States)

    Nozaki, Mikito; Watanabe, Kenta; Yamada, Takahiro; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-06-01

    Alumina incorporating nitrogen (aluminum oxynitride; AlON) for immunity against charge injection was grown on a AlGaN/GaN substrate through the repeated atomic layer deposition (ALD) of AlN layers and in situ oxidation in ozone (O3) ambient under optimized conditions. The nitrogen distribution was uniform in the depth direction, the composition was controllable over a wide range (0.5–32%), and the thickness could be precisely controlled. Physical analysis based on synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) revealed that harmful intermixing at the insulator/AlGaN interface causing Ga out-diffusion in the gate stack was effectively suppressed by this method. AlON/AlGaN/GaN MOS capacitors were fabricated, and they had excellent electrical properties and immunity against electrical stressing as a result of the improved interface stability.

  17. The enhancement of neutral metal Na layer above thunderstorms

    Science.gov (United States)

    Yu, Bingkun; Xue, Xianghui; Lu, Gaopeng; Kuo, Chengling; Dou, Xiankang; Gao, Qi; Qie, Xiushu; Wu, Jianfei; Tang, Yihuan

    2017-04-01

    Na (sodium) exists as layers of atoms in the mesosphere/lower thermosphere (MLT) at altitudes between 80 and 105 km. It has lower ionization potential of 5.139 eV than atmospheric species, such as O2 (12.06 eV). Tropospheric thunderstorms affect the lower ionosphere and the ionospheric sporadic E (Es) at 100 km can also be influenced by lightning. The mechanism is expected to be associated with transient luminous events (TLE) as red sprites and gigantic jets at upper atmosphere. However, measurements of ionospheric electric fields of 20mV·m-1 above thunderstorms are less than estimated value (>48 0mV·m-1) to excite ionization in the lower ionosphere. We found an enhancement of Na layer above thunderstorms. The increase of Na density in the statistical result can be as much as 500 cm-3 and it will have an impact on ionospheric chemistry and modify the conductivity properties of the MLT region. The ionospheric observations made with two digisondes near the Na lidar, the thunderstorm model, ionosphere model, and Na chemistry model are all used to discuss the possible mechanisms responsible for the enhancement of Na layer after thunderstorms.

  18. Layer-by-Layer Motif Architectures: Programmed Electrochemical Syntheses of Multilayer Mesoporous Metallic Films with Uniformly Sized Pores.

    Science.gov (United States)

    Jiang, Bo; Li, Cuiling; Qian, Huayu; Hossain, Md Shahriar A; Malgras, Victor; Yamauchi, Yusuke

    2017-06-26

    Although multilayer films have been extensively reported, most compositions have been limited to non-catalytically active materials (e.g. polymers, proteins, lipids, or nucleic acids). Herein, we report the preparation of binder-free multilayer metallic mesoporous films with sufficient accessibility for high electrocatalytic activity by using a programmed electrochemical strategy. By precisely tuning the deposition potential and duration, multilayer mesoporous architectures consisting of alternating mesoporous Pd layers and mesoporous PdPt layers with controlled layer thicknesses can be synthesized within a single electrolyte, containing polymeric micelles as soft templates. This novel architecture, combining the advantages of bimetallic alloys, multilayer architectures, and mesoporous structures, exhibits high electrocatalytic activity for both the methanol oxidation reaction (MOR) and the ethanol oxidation reaction (EOR). © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Self-aligned metallization on organic semiconductor through 3D dual-layer thermal nanoimprint

    International Nuclear Information System (INIS)

    Jung, Y; Cheng, X

    2014-01-01

    High-resolution patterning of metal structures on organic semiconductors is important to the realization of high-performance organic transistors for organic integrated circuit applications. The traditional shadow mask technique has a limited resolution, precluding sub-micron metal structures on organic semiconductors. Thus organic transistors cannot benefit from scaling into the deep sub-micron region to improve their dc and ac performances. In this work, we report an efficient multiple-level metallization on poly (3-hexylthiophene) (P3HT) with a deep sub-micron lateral gap. By using a 3D nanoimprint mold in a dual-layer thermal nanoimprint process, we achieved self-aligned two-level metallization on P3HT. The 3D dual-layer thermal nanoimprint enables the first metal patterns to have suspending side-wings that can clearly define a distance from the second metal patterns. Isotropic and anisotropic side-wing structures can be fabricated through two different schemes. The process based on isotropic side-wings achieves a lateral-gap in the order of 100 nm (scheme 1). A gap of 60 nm can be achieved from the process with anisotropic side-wings (scheme 2). Because of the capability of nanoscale metal patterning on organic semiconductors with high overlay accuracy, this self-aligned metallization technique can be utilized to fabricate high-performance organic metal semiconductor field-effect transistor. (paper)

  20. UN{sub 2−x} layer formed on uranium metal by glow plasma nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Long, Zhong [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Hu, Yin [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Chen, Lin [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Luo, Lizhu [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Liu, Kezhao, E-mail: liukz@hotmail.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Lai, Xinchun, E-mail: lai319@yahoo.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China)

    2015-01-25

    Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN{sub 2−x}. • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN{sub 2−x}. TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed.

  1. UN2−x layer formed on uranium metal by glow plasma nitriding

    International Nuclear Information System (INIS)

    Long, Zhong; Hu, Yin; Chen, Lin; Luo, Lizhu; Liu, Kezhao; Lai, Xinchun

    2015-01-01

    Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN 2−x . • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN 2−x . TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed

  2. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  3. Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

    Science.gov (United States)

    Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

    2018-04-01

    In this work, we present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor (TFET) for DRAM applications. The n-doped boosting layer and gate2 drain-underlap structure is employed in the device to obtain an excellent 1T-DRAM performance. The n-doped layer inserted between the source and channel regions improves the sensing margin because of a high rate of increase in the band-to-band tunneling (BTBT) probability. Furthermore, because the gate2 drain-underlap structure reduces the recombination rate that occurs between the gate2 and drain regions, a device with a gate2 drain-underlap length (L G2_D-underlap) of 10 nm exhibited a longer retention performance. As a result, by applying the n-doped layer and gate2 drain-underlap structure, the proposed device exhibited not only a high sensing margin of 1.11 µA/µm but also a long retention time of greater than 100 ms at a temperature of 358 K (85 °C).

  4. Surface modification of upconverting nanoparticles by layer-by-layer assembled polyelectrolytes and metal ions.

    Science.gov (United States)

    Palo, Emilia; Salomäki, Mikko; Lastusaari, Mika

    2017-12-15

    Modificating and protecting the upconversion luminescence nanoparticles is important for their potential in various applications. In this work we demonstrate successful coating of the nanoparticles by a simple layer-by-layer method using negatively charged polyelectrolytes and neodymium ions. The layer fabrication conditions such as number of the bilayers, solution concentrations and selected polyelectrolytes were studied to find the most suitable conditions for the process. The bilayers were characterized and the presence of the desired components was studied and confirmed by various methods. In addition, the upconversion luminescence of the bilayered nanoparticles was studied to see the effect of the surface modification on the overall intensity. It was observed that with selected deposition concentrations the bilayer successfully shielded the particle resulting in stronger upconversion luminescence. The layer-by-layer method offers multiple possibilities to control the bilayer growth even further and thus gives promises that the use of upconverting nanoparticles in applications could become even easier with less modification steps in the future. Copyright © 2017 Elsevier Inc. All rights reserved.

  5. Ion exchange of alkaline metals on the thin-layer zinc ferrocyanide

    International Nuclear Information System (INIS)

    Betenekov, N.D.; Buklanov, G.V.; Ipatova, E.G.; Korotkin, Yu.S.

    1991-01-01

    Basic regularities of interphase distribution in the system of thin-layer sorbent on the basis of mixed zinc ferrocyanide (FZ)-alkaline metal solution (Na, K, Rb, Cs, Fr) in the column chromatography made are studied. It is established that interphase distribution of microgram amounts of alkaline metals in the systems thin-layer FZ-NH 4 NO 3 electrolyte solutions is of ion-exchange character and subjected to of law effective mass. It is shown that FZ thin-layer material is applicable for effective chromatographic separation of alkaline metal trace amounts. An approach to the choice of a conditions of separate elution of Na, K, Rb, Cs, Fr in the column chromatography mode

  6. Metal clusters on supported argon layers; Metallcluster auf dielektrischen Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Faber, Bernhard

    2011-10-21

    The deposition of small sodium clusters on supported Ar(001)-surfaces is simulated. Theoretical description is achieved by a hierarchical model consisting of time-dependent DFT and molecular dynamics. The valence electrons of the sodium atoms are considered by Kohn-Sham-Scheme with self interaction correction. The interaction of argon atoms and sodium ions is described by atom-atom potentials whereas the coupling to the QM electrons is done by local pseudo-potentials. A decisive part of the model is the dynamical polarizability of the rare-gas atoms. The optional metal support is considered by the method of image charges. The influence of the forces caused by image charges and the influence of the number of argon monolayers on structure, optical response and deposition dynamics of Na{sub 6} and Na{sub 8} is investigated. There is very little influence on cluster structure and only a small shift of the cluster perpendicular to the surface. Concerning optical response the position of the Mie plasmon peak stays robust whereas the details of spectral fragmentation react very sensitively to changes. The forces caused by image charges of the metal support play only a little role with the dynamics of deposition while the thickness of the argon surface strongly influences the dissipation. (orig.)

  7. Synthesis of multicomponent metallic layers during impulse plasma deposition

    Directory of Open Access Journals (Sweden)

    Nowakowska-Langier Katarzyna

    2015-12-01

    Full Text Available Pulsed plasma in the impulse plasma deposition (IPD synthesis is generated in a coaxial accelerator by strong periodic electrical pulses, and it is distributed in a form of energetic plasma packets. A nearly complete ionization of gas, in these conditions of plasma generation, favors the nucleation of new phase of ions and synthesis of metastable materials in a form of coatings which are characterized by amorphous and/or nanocrystalline structure. In this work, the Fe–Cu alloy, which is immiscible in the state of equilibrium, was selected as a model system to study the possibility of formation of a non-equilibrium phase during the IPD synthesis. Structural characterization of the layers was done by means of X-ray diffraction and conversion-electron Mössbauer spectroscopy. It was found that supersaturated solid solutions were created as a result of mixing and/or alloying effects between the layer components delivered to the substrate independently and separately in time. Therefore, the solubility in the Fe–Cu system was largely extended in relation to the equilibrium conditions, as described by the equilibrium phase diagram in the solid state.

  8. Nonlocal laser annealing to improve thermal contacts between multi-layer graphene and metals

    International Nuclear Information System (INIS)

    Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Moshkalev, Stanislav A; Baranov, Alexander V

    2013-01-01

    The accuracy of thermal conductivity measurements by the micro-Raman technique for suspended multi-layer graphene flakes has been shown to depend critically on the quality of the thermal contacts between the flakes and the metal electrodes used as the heat sink. The quality of the contacts can be improved by nonlocal laser annealing at increased power. The improvement of the thermal contacts to initially rough metal electrodes is attributed to local melting of the metal surface under laser heating, and increased area of real metal–graphene contact. Improvement of the thermal contacts between multi-layer graphene and a silicon oxide surface was also observed, with more efficient heat transfer from graphene as compared with the graphene–metal case. (paper)

  9. Ultrathin, Ultrasmooth Gold Layer on Dielectrics without the Use of Additional Metallic Adhesion Layers

    DEFF Research Database (Denmark)

    Leandro, Lorenzo; Malureanu, Radu; Rozlosnik, Noemi

    2015-01-01

    With advances in the plasmonics and metamaterials research field, it has become more and more important to fabricate thin and smooth Au metal films in a reliable way. Here, by thin films we mean that their average height is below 10 mu and their average roughness is below 5% of the total thicknes...

  10. Changes of electrical conductivity of the metal surface layer by the laser alloying with foreign elements

    Science.gov (United States)

    Kostrubiec, Franciszek; Pawlak, Ryszard; Raczynski, Tomasz; Walczak, Maria

    1994-09-01

    Laser treatment of the surface of materials is of major importance for many fields technology. One of the latest and most significant methods of this treatment is laser alloying consisting of introducing foreign atoms into the metal surface layer during the reaction of laser radiation with the surface. This opens up vast possibilities for the modification of properties of such a layer (obtaining layers of increased microhardness, increased resistance to electroerosion in an electric arc, etc.). Conductivity of the material is a very important parameter in case of conductive materials used for electrical contacts. The paper presents the results of studies on change in electrical conductivity of the surface layer of metals alloyed with a laser. A comparative analysis of conductivity of base metal surface layers prior to and following laser treatment has been performed. Depending on the base metal and the alloying element, optical treatment parameters allowing a required change in the surface layer conductivity have been selected. A very important property of the contact material is its resistance to plastic strain. It affects the real value of contact surface coming into contact and, along with the material conductivity, determines contact resistance and the amount of heat generated in place of contact. These quantities are directly related to the initiation and the course of an arc discharge, hence they also affect resistance to electroerosion. The parameter that reflects plastic properties with loads concentrated on a small surface, as is the case with a reciprocal contact force of two real surfaces with their irregularities being in contact, is microhardness. In the paper, the results of investigations into microhardness of modified surface layers compared with base metal microhardness have been presented.

  11. Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

    Science.gov (United States)

    Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

    2015-01-16

    ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

  12. Melt layer behavior of metal targets irradiatead by powerful plasma streams

    International Nuclear Information System (INIS)

    Bandura, A.N.; Byrka, O.V.; Chebotarev, V.V.; Garkusha, I.E.; Makhlaj, V.A.; Solyakov, D.G.; Tereshin, V.I.; Wuerz, H.

    2002-01-01

    In this paper melt layer erosion of metal targets under pulsed high-heat loads is studied. Experiments with steel, copper, aluminum and titanium samples were carried out in two plasma accelerator devices with different time durations of the heat load. The surfaces of the resolidified melt layers show a considerable roughness with microcraters and ridge like relief on the surface. For each material the mass loss was determined. Melt layer erosion by melt motion was clearly identified. However it is masked by boiling, bubble expansion and bubble collapse and by formation of a Kelvin-Helmholtz instability. The experimental results can be used for validation of numerical codes which model melt layer erosion of metallic armour materials in off-normal events, in tokamaks

  13. Melt layer behavior of metal targets irradiatead by powerful plasma streams

    Energy Technology Data Exchange (ETDEWEB)

    Bandura, A.N.; Byrka, O.V.; Chebotarev, V.V.; Garkusha, I.E. E-mail: garkusha@ipp.kharkov.ua; Makhlaj, V.A.; Solyakov, D.G.; Tereshin, V.I.; Wuerz, H

    2002-12-01

    In this paper melt layer erosion of metal targets under pulsed high-heat loads is studied. Experiments with steel, copper, aluminum and titanium samples were carried out in two plasma accelerator devices with different time durations of the heat load. The surfaces of the resolidified melt layers show a considerable roughness with microcraters and ridge like relief on the surface. For each material the mass loss was determined. Melt layer erosion by melt motion was clearly identified. However it is masked by boiling, bubble expansion and bubble collapse and by formation of a Kelvin-Helmholtz instability. The experimental results can be used for validation of numerical codes which model melt layer erosion of metallic armour materials in off-normal events, in tokamaks.

  14. Organic-inorganic perovskites containing trivalent metal halide layers: the templating influence of the organic cation layer.

    Science.gov (United States)

    Mitzi, D B

    2000-12-25

    Thin sheetlike crystals of the metal-deficient perovskites (H2AEQT)M2/3I4 [M = Bi or Sb; AEQT = 5,5"'-bis-(aminoethyl)-2,2':5',2'':5'',2'''-quaterthiophene] were formed from slowly cooled ethylene glycol/2-butanol solutions containing the bismuth(III) or antimony(III) iodide and AEQT.2HI salts. Each structure was refined in a monoclinic (C2/m) subcell, with the lattice parameters a = 39.712(13) A, b = 5.976(2) A, c = 6.043(2) A, beta = 92.238(5) degrees, and Z = 2 for M = Bi and a = 39.439(7) A, b = 5.952(1) A, c = 6.031(1) A, beta = 92.245(3) degrees, and Z = 2 for M = Sb. The trivalent metal cations locally adopt a distorted octahedral coordination, with M-I bond lengths ranging from 3.046(1) to 3.218(3) A (3.114 A average) for M = Bi and 3.012(1) to 3.153(2) A (3.073 A average) for M = Sb. The new organic-inorganic hybrids are the first members of a metal-deficient perovskite family consisting of (Mn+)2/nV(n-2)/nX4(2-) sheets, where V represents a vacancy (generally left out of the formula) and the metal cation valence, n, is greater than 2. The organic layers in the AEQT-based organic-inorganic hybrids feature edge-to-face aromatic interactions among the rigid, rodlike quaterthiophene moieties, which may help to stabilize the unusual metal-deficient layered structures.

  15. The attenuation of temperature oscillations in passing through liquid metal boundary layers

    International Nuclear Information System (INIS)

    Lawn, C.J.

    1975-08-01

    One aspect of predicting the endurance of components subject to thermal fatigue in liquid metal cooled reactors is the extent to which oscillations in fluid temperature are transmitted to metal surfaces, such as the above-core structure. The first geometry considered is that of a solid plate in contact with a layer of stagnant fluid, in which temperature oscillations are imposed at a given distance from the plate. Transmission through a laminar boundary layer developing over the plate surface is then considered. An approximate calculation based on the slug-flow analysis of Sucec (1975) is developed. (U.K.)

  16. Hydration forces and liquid-like layer on the ice/metal interface

    International Nuclear Information System (INIS)

    Daikhin, Leonid; Tsionsky, Vladimir

    2007-01-01

    A model to describe the phenomenon of the liquid-like layer is proposed. It is based on the theory of the hydration forces proposed by Gruen and Marcelja (1983 J. Chem. Soc. Faraday Trans. II 79 225), taking into account the influence of ions on the free energy of water. The model was applied to experimental data obtained with the quartz-crystal microbalance, in a study of the liquid-like layer between metal and frozen aqueous electrolytes and between metal and ice

  17. FTIR spectroscopy structural analysis of the interaction between Lactobacillus kefir S-layers and metal ions

    Science.gov (United States)

    Gerbino, E.; Mobili, P.; Tymczyszyn, E.; Fausto, R.; Gómez-Zavaglia, A.

    2011-02-01

    FTIR spectroscopy was used to structurally characterize the interaction of S-layer proteins extracted from two strains of Lactobacillus kefir (the aggregating CIDCA 8348 and the non-aggregating JCM 5818) with metal ions (Cd +2, Zn +2, Pb +2 and Ni +2). The infrared spectra indicate that the metal/protein interaction occurs mainly through the carboxylate groups of the side chains of Asp and Glut residues, with some contribution of the NH groups belonging to the peptide backbone. The frequency separation between the νCOO - anti-symmetric and symmetric stretching vibrations in the spectra of the S-layers in presence of the metal ions was found to be ca. 190 cm -1 for S-layer CIDCA 8348 and ca. 170 cm -1 for JCM 5818, denoting an unidentate coordination in both cases. Changes in the secondary structures of the S-layers induced by the interaction with the metal ions were also noticed: a general trend to increase the amount of β-sheet structures and to reduce the amount of α-helices was observed. These changes allow the proteins to adjust their structure to the presence of the metal ions at minimum energy expense, and accordingly, these adjustments were found to be more important for the bigger ions.

  18. Metal Surface Modification for Obtaining Nano- and Sub-Nanostructured Protective Layers

    OpenAIRE

    Ledovskykh, Volodymyr; Vyshnevska, Yuliya; Brazhnyk, Igor; Levchenko, Sergiy

    2017-01-01

    Regularities of the phase protective layer formation in multicomponent systems involving inhibitors with different mechanism of protective action have been investigated. It was shown that optimization of the composition of the inhibition mixture allows to obtain higher protective efficiency owing to improved microstructure of the phase layer. It was found that mechanism of the film formation in the presence of NaNO2-PHMG is due to deposition of slightly soluble PHMG-Fe complexes on the metal ...

  19. Growth of micrometric oxide layers to explore laser decontamination of metallic surfaces

    OpenAIRE

    Carvalho Luisa; Pacquentin Wilfried; Tabarant Michel; Maskrot Hicham; Semerok Alexandre

    2017-01-01

    The nuclear industry produces a wide range of radioactive waste in terms of hazard level, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop safe techniques for dismantling and for decontamination, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. In this paper we propose a method for the creation of oxide layers on stai...

  20. Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

    OpenAIRE

    Carvalho Luisa; Pacquentin Wilfried; Tabarant Michel; Maskrot Hicham; Semerok Alexandre

    2017-01-01

    The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless st...

  1. Removal of contaminated asphalt layers by using heat generating powder metallic systems

    International Nuclear Information System (INIS)

    Barinov, A.S.; Karlina, O.K.; Ojovan, M.I.

    1996-01-01

    Heat generating systems on the base of powder metallic fuel were used for the removal of contaminated asphalt layers. Decontamination of spots which had complex geometric form was performed. Asphalt layers with deep contamination were removed essentially all radionuclides being retained in asphalt residue. Only a small part (1 - 2 %) of radionuclides could pass to combustion slag. No radionuclides were detected in aerosol-gas phase during decontamination process

  2. Atomic layer deposition of HfO{sub 2} for integration into three-dimensional metal-insulator-metal devices

    Energy Technology Data Exchange (ETDEWEB)

    Assaud, Loic [Aix Marseille Univ, CNRS, CINAM, Marseille (France); ICMMO-ERIEE, Universite Paris-Sud / Universite Paris-Saclay, CNRS, Orsay (France); Pitzschel, Kristina; Barr, Maissa K.S.; Petit, Matthieu; Hanbuecken, Margrit; Santinacci, Lionel [Aix Marseille Univ, CNRS, CINAM, Marseille (France); Monier, Guillaume [Universite Clermont Auvergne, Universite Blaise Pascal, CNRS, Institut Pascal, Clermont-Ferrand (France)

    2017-12-15

    HfO{sub 2} nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal-insulator-metal (MIM) devices. HfO{sub 2} thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO{sub 2} layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO{sub 2} layers grown at low-temperature (T = 150 C) were amorphous, while for a higher temperature (T = 250 C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN/HfO{sub 2}/TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures. (orig.)

  3. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 02447 (Korea, Republic of)

    2016-07-15

    We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

  4. Surface layers in the 4A group metals with implanted silicon ions

    International Nuclear Information System (INIS)

    Kovneristyj, Yu.K.; Vavilova, V.V.; Krasnopevtsev, V.V.; Galkin, L.N.; Kudyshev, A.N.; Klechkovskaya, V.V.

    1987-01-01

    A study was made on the change of structure and phase composition of fine near the surface layers of 4A group metals (Hf, Zr, Ti) during ion Si implantation and successive thermal annealing at elevated temperatures. Implantation of Si + ions with 30 or 16 keV energy in Ti, Zr and Hf at room temperature results to amorphization of metal surface layer. The surface hafnium and titanium layer with implanted Si atoms due to interaction with residual atmosphere of oxygen turns during annealing at 870 K to amorphous solid solution of HfO 2m or TiO 2 with Si, preventing further metal oxidation; layers of amorphous alloy are characterized by thermal stability up to 1270 K. Oxidation of the surface amorphous layer in residual oxygen atmosphere and its crystallization in ZrO 2 take place in result of Zr annealing with implanted Si ions at temperature not exceeding 870 K. Similar phenomena are observed in the case of hafnium with implanted oxygen ions or small dose of silicon ions. Thermal stability of amorphous layers produced during ion implantation of Si in Ti, Zr and Hf corresponds to scale resistance of monolithic alloys in Ti-Si, Zr-Si and Hf-Si systems

  5. An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET

    Science.gov (United States)

    Saramekala, G. K.; Santra, Abirmoya; Dubey, Sarvesh; Jit, Satyabrata; Tiwari, Pramod Kumar

    2013-08-01

    In this paper, an analytical short-channel threshold voltage model is presented for a dual-metal-gate (DMG) fully depleted recessed source/drain (Re-S/D) SOI MOSFET. For the first time, the advantages of recessed source/drain (Re-S/D) and of dual-metal-gate structure are incorporated simultaneously in a fully depleted SOI MOSFET. The analytical surface potential model at Si-channel/SiO2 interface and Si-channel/buried-oxide (BOX) interface have been developed by solving the 2-D Poisson’s equation in the channel region with appropriate boundary conditions assuming parabolic potential profile in the transverse direction of the channel. Thereupon, a threshold voltage model is derived from the minimum surface potential in the channel. The developed model is analyzed extensively for a variety of device parameters like the oxide and silicon channel thicknesses, thickness of source/drain extension in the BOX, control and screen gate length ratio. The validity of the present 2D analytical model is verified with ATLAS™, a 2D device simulator from SILVACO Inc.

  6. Experimental study of conjugate heat transfer from liquid metal layer cooled by overlying freon

    International Nuclear Information System (INIS)

    Cho, J.S.; Suh, K.Y.; Chung, C.H.; Park, R.J.; Kim, S.B.

    2001-01-01

    Steady-state and transient experiments were performed for the heat transfer from the liquid metal pool with overlying Freon (R113) coolant in the process of boiling. The simulant molten pool material is tin (Sn) with the melting temperature of 232 Celsius degrees. The metal pool is heated from the bottom surface and the coolant is injected onto the molten metal pool. Tests were conducted under the condition of the bottom surface heating in the test section and the forced convection of the R113 coolant being injected onto the molten metal pool. The bottom heating condition was varied from 8 kW to 14 kW. The temperature distributions of the metal layer and coolant were obtained in the steady-state experiment. The boiling mechanism of the R113 coolant was changed from the nucleate boiling to film boiling in the transient experiment. The critical heat flux (CHF) phenomenon was observed during the transition from the nucleate boiling to the film boiling. Also, the Nusselt (Nu) number and the Rayleigh (Ra) number in the molten metal pool region were obtained as functions of time. Analysis was done for the relationship between the heat flux and the temperature difference between the metal layer surface and the boiling coolant. In this experiment, the heat transfer is achieved with accompanying solidification in the molten metal pool by the boiling R113 coolant there above. The present test results of the natural convection heat transfer on the molten metal pool are higher than those of the liquid metal natural convection heat transfer without coolant boiling. It can be interpreted that the heat transfer rate is enhanced by the overlying boiling coolant having the high heat removal rate. Analysis of the relationship between the heat flux and the difference between the metal layer surface temperature and the coolant bulk boiling temperature revealed that the CHF occurs when the temperature difference reaches a neighborhood of 50 Celsius degrees. Also, if the temperature

  7. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    KAUST Repository

    Anasori, Babak

    2016-02-24

    In this study, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M′2M′′C2 and M′2M′′2C3 – where M′ and M′′ are two different early transition metals, such as Mo, Cr, Ta, Nb, V, and Ti. The M′ atoms only occupy the outer layers and the M′′ atoms fill the middle layers. In other words, M′ atomic layers sandwich the middle M′′–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. This finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in which semiconducting properties are required.

  8. Metal ion-specific thermal stability of bacterial S-Layers

    Energy Technology Data Exchange (ETDEWEB)

    Drobot, Bjoern; Raff, Johannes [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Div. Biogeochemistry; Fahmy, Karim [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Div. Biophysics

    2016-07-01

    Many bacteria are covered by a surface layer (S-layer), i.e., a para-crystalline two-dimensional array of proteins which control cell shape, act as molecular sieves and have potential applications as radionuclide-binding material for bioremediation of polluted areas. Knowledge and control of the metal-dependent stability of the purified proteins is required for their technical application. Here, we have explored by differential scanning calorimetry the thermal stability of the S-layer protein slp-B53 from Lysinibacillus sphaericus, a Gram-positive bacterium isolated from a uranium mining waste pile [1].

  9. Single-layer dispersions of transition metal dichalcogenides in the synthesis of intercalation compounds

    International Nuclear Information System (INIS)

    Golub, Alexander S; Zubavichus, Yan V; Slovokhotov, Yurii L; Novikov, Yurii N

    2003-01-01

    Chemical methods for the exfoliation of transition metal dichalcogenides in a liquid medium to give single-layer dispersions containing quasi-two-dimensional layers of these compounds are surveyed. Data on the structure of dispersions and their use in the synthesis of various types of heterolayered intercalation compounds are discussed and described systematically. Structural features, the electronic structure and the physicochemical properties of the resulting intercalation compounds are considered. The potential of this method of synthesis is compared with that of traditional solid-state methods for the intercalation of layered crystals.

  10. Spectra of magnetoplasma polaritons in a semiconductor layer on a metallic substrate

    International Nuclear Information System (INIS)

    Beletsekii, N.N.; Gasan, E.A.; Yakovenko, V.M.

    1988-01-01

    The dispersion properties of volume and surface magnetoplasma polaritons in a three-layer metal-semiconductor-insulator structure are studied. It is predicted that surface magnetoplasma polaritons propagating on the two boundaries of the semiconductor layer interact resonantly. It is shown that for a certain direction of propagation the dispersion curves of surface and volume magnetoplasma polaritons contain sections with negative dispersion. Nonreciprocal propagation of volume magnetoplasma polaritons has been observed. Losses in the semiconductor layer split the starting spectral lines into dispersion curves of two types, corresponding to forward and backward waves

  11. Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

    International Nuclear Information System (INIS)

    Baek, Seung-heon Chris; Seo, Yu-Jin; Oh, Joong Gun; Albert Park, Min Gyu; Bong, Jae Hoon; Yoon, Seong Jun; Lee, Seok-Hee; Seo, Minsu; Park, Seung-young; Park, Byong-Guk

    2014-01-01

    In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.

  12. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

    Science.gov (United States)

    Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

    2018-05-08

    A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

  13. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

    Science.gov (United States)

    Uedono, A.; Inumiya, S.; Matsuki, T.; Aoyama, T.; Nara, Y.; Ishibashi, S.; Ohdaira, T.; Suzuki, R.; Miyazaki, S.; Yamada, K.

    2007-09-01

    Vacancy-fluorine complexes in metal-oxide semiconductors (MOS) with high-k gate dielectrics were studied using a positron annihilation technique. F+ ions were implanted into Si substrates before the deposition of gate dielectrics (HfSiON). The shift of threshold voltage (Vth) in MOS capacitors and an increase in Fermi level position below the HfSiON/Si interface were observed after F+ implantation. Doppler broadening spectra of the annihilation radiation and positron lifetimes were measured before and after HfSiON fabrication processes. From a comparison between Doppler broadening spectra and those obtained by first-principles calculation, the major defect species in Si substrates after annealing treatment (1050 °C, 5 s) was identified as vacancy-fluorine complexes (V3F2). The origin of the Vth shift in the MOS capacitors was attributed to V3F2 located in channel regions.

  14. In-Ga-Zn-oxide thin-film transistors with Sb2TeOx gate insulators fabricated by reactive sputtering using a metallic Sb2Te target

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok

    2011-01-01

    Using reactive sputtering, we made transparent amorphous Sb 2 TeO x thin films from a metallic Sb 2 Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb 2 TeO x gate insulators deposited at room temperature showed a large hysteresis with a counter clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb 2 TeO x films formed at 250 .deg. C. After the IGZO TFT had been annealed at 200 .deg. C for 1 hour in an O 2 ambient, the mobility of the IGZO TFT was 22.41 cm 2 /Vs, and the drain current on-off ratio was ∼10 8 .

  15. Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Pang Liang; Kim, Kyekyoon

    2012-01-01

    A bimodal deposition scheme combining radiofrequency magnetron sputtering and plasma enhanced chemical vapour deposition (PECVD) is proposed as a means for improving the performance of GaN-based metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). High-density sputtered-SiO 2 is utilized to reduce the gate leakage current and enhance the breakdown voltage while low-density PECVD-SiO 2 is employed to buffer the sputtering damage and further increase the drain current by engineering the stress-induced-polarization. Thus-fabricated MOSHEMT exhibited a low leakage current of 4.21 × 10 -9 A mm -1 and high breakdown voltage of 634 V for a gate-drain distance of 6 µm, demonstrating the promise of bimodal-SiO 2 deposition scheme for the development of GaN-based MOSHEMTs for high-power application. (paper)

  16. Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

    Science.gov (United States)

    Lee, Ching-Ting; Wang, Chun-Chi

    2018-04-01

    To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

  17. Layer-by-Layer Method for the Synthesis and Growth of Surface Mounted Metal-Organic Frameworks (SURMOFs

    Directory of Open Access Journals (Sweden)

    Osama Shekhah

    2010-02-01

    Full Text Available A layer-by-layer method has been developed for the synthesis of metal-organic frameworks (MOFs and their deposition on functionalized organic surfaces. The approach is based on the sequential immersion of functionalized organic surfaces into solutions of the building blocks of the MOF, i.e., the organic ligand and the inorganic unit. The synthesis and growth of different types of MOFs on substrates with different functionalization, like COOH, OH and pyridine terminated surfaces, were studied and characterized with different surface characterization techniques. A controlled and highly oriented growth of very homogenous films was obtained using this method. The layer-by-layer method offered also the possibility to study the kinetics of film formation in more detail using surface plasmon resonance and quartz crystal microbalance. In addition, this method demonstrates the potential to synthesize new classes of MOFs not accessible by conventional methods. Finally, the controlled growth of MOF thin films is important for many applications like chemical sensors, membranes and related electrodes.

  18. Investigation of Selective Laser Melting Surface Alloyed Aluminium Metal Matrix Dispersive Reinforced Layers

    Science.gov (United States)

    Kamburov, V. V.; Dimitrova, R. B.; Kandeva, M. K.; Sofronov, Y. P.

    2018-01-01

    The aim of the paper is to investigate the improvement of mechanical properties and in particular wear resistance of laser surface alloyed dispersive reinforced thin layers produced by selective laser melting (SLM) technology. The wear resistance investigation of aluminium matrix composite layers in the conditions of dry friction surface with abrasive particles and nanoindentation tests were carried out. The process parameters (as scan speed) and their impact on the wear resistant layers have been evaluated. The alloyed layers containing metalized SiC particles were studied by Optical and Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray microanalysis (EDX). The obtained experimental results of the laser alloyed thin layers show significant development of their wear resistance and nanohardness due to the incorporated reinforced phase of electroless nickel coated SiC particles.

  19. Manipulating molecular quantum states with classical metal atom inputs: demonstration of a single molecule NOR logic gate.

    Science.gov (United States)

    Soe, We-Hyo; Manzano, Carlos; Renaud, Nicolas; de Mendoza, Paula; De Sarkar, Abir; Ample, Francisco; Hliwa, Mohamed; Echavarren, Antonio M; Chandrasekhar, Natarajan; Joachim, Christian

    2011-02-22

    Quantum states of a trinaphthylene molecule were manipulated by putting its naphthyl branches in contact with single Au atoms. One Au atom carries 1-bit of classical information input that is converted into quantum information throughout the molecule. The Au-trinaphthylene electronic interactions give rise to measurable energy shifts of the molecular electronic states demonstrating a NOR logic gate functionality. The NOR truth table of the single molecule logic gate was characterized by means of scanning tunnelling spectroscopy.

  20. Scratch test induced shear banding in high power laser remelted metallic glass layers

    NARCIS (Netherlands)

    Matthews, D. T. A.; Ocelik, V.; de Hosson, J. Th. M.

    Laser remelted surface layers of a Cu-based metallic glass forming alloy have been produced with fully amorphous depths up to 350 mu m for single track widths of around 1.3 mm and have been checked by transmission of synchrotron radiation. They have been subjected to indentation hardness and scratch

  1. Sol-gel deposition of buffer layers on biaxially textured metal substances

    Science.gov (United States)

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  2. Heat-resistant organic molecular layer as a joint interface for metal reduction on plastics surfaces

    International Nuclear Information System (INIS)

    Sang, Jing; Aisawa, Sumio; Hirahara, Hidetoshi; Kudo, Takahiro; Mori, Kunio

    2016-01-01

    Graphical abstract: - Highlights: • In situ adsorption behaviors of TES on PA6 surface were clarified by QCM. • Highest adsorption of TES on PA6 was obtained in pH 3 and 0.1 M solution. • Molecular layers of TES with uniform structures were prepared on PA6 surface. • TES layer improved PA6 local heat resistance from 150 °C to 230 °C. • TES molecular layer successfully reduced Ag ion to Ag"0. - Abstract: Heat-resistant organic molecular layers have been fabricated by triazine-based silane coupling agent for metal reduction on plastic surfaces using adsorption method. These molecular layers were used as an interfacial layer between polyamide (PA6) and metal solution to reduce Ag"+ ion to Ag"0. The interfacial behaviors of triazine molecular layer at the interfaces between PA6 and Ag solution were investigated using quartz crystal microbalance (QCM). The kinetics of molecular adsorption on PA6 was investigated by using triazine-based silane coupling agent solutions at different pH and concentration. X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and local nano thermal analysis were employed to characterize the surfaces and interfaces. The nano thermal analysis results show that molecular layers of triazine-based silane coupling agent greatly improved heat resistance of PA6 resin from 170 °C up to 230 °C. This research developed an in-depth insight for molecular behaviors of triazine-based silane coupling agent at the PA6 and Ag solution interfaces and should be of significant value for interfacial research between plastics and metal solution in plating industry.

  3. Heat-resistant organic molecular layer as a joint interface for metal reduction on plastics surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Sang, Jing [Department of Frontier Materials and Function Engineering, Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Aisawa, Sumio, E-mail: aisawa@iwate-u.ac.jp [Department of Frontier Materials and Function Engineering, Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Hirahara, Hidetoshi [Department of Frontier Materials and Function Engineering, Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Kudo, Takahiro [Sulfur Chemical Institute, 210, Collabo MIU, 4-3-5, Ueda, Morioka 020-0066 (Japan); Mori, Kunio [Department of Frontier Materials and Function Engineering, Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Sulfur Chemical Institute, 210, Collabo MIU, 4-3-5, Ueda, Morioka 020-0066 (Japan)

    2016-04-15

    Graphical abstract: - Highlights: • In situ adsorption behaviors of TES on PA6 surface were clarified by QCM. • Highest adsorption of TES on PA6 was obtained in pH 3 and 0.1 M solution. • Molecular layers of TES with uniform structures were prepared on PA6 surface. • TES layer improved PA6 local heat resistance from 150 °C to 230 °C. • TES molecular layer successfully reduced Ag ion to Ag{sup 0}. - Abstract: Heat-resistant organic molecular layers have been fabricated by triazine-based silane coupling agent for metal reduction on plastic surfaces using adsorption method. These molecular layers were used as an interfacial layer between polyamide (PA6) and metal solution to reduce Ag{sup +} ion to Ag{sup 0}. The interfacial behaviors of triazine molecular layer at the interfaces between PA6 and Ag solution were investigated using quartz crystal microbalance (QCM). The kinetics of molecular adsorption on PA6 was investigated by using triazine-based silane coupling agent solutions at different pH and concentration. X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and local nano thermal analysis were employed to characterize the surfaces and interfaces. The nano thermal analysis results show that molecular layers of triazine-based silane coupling agent greatly improved heat resistance of PA6 resin from 170 °C up to 230 °C. This research developed an in-depth insight for molecular behaviors of triazine-based silane coupling agent at the PA6 and Ag solution interfaces and should be of significant value for interfacial research between plastics and metal solution in plating industry.

  4. Thermal Rayleigh-Marangoni convection in a three-layer liquid-metal-battery model

    Science.gov (United States)

    Köllner, Thomas; Boeck, Thomas; Schumacher, Jörg

    2017-05-01

    The combined effects of buoyancy-driven Rayleigh-Bénard convection (RC) and surface tension-driven Marangoni convection (MC) are studied in a triple-layer configuration which serves as a simplified model for a liquid metal battery (LMB). The three-layer model consists of a liquid metal alloy cathode, a molten salt separation layer, and a liquid metal anode at the top. Convection is triggered by the temperature gradient between the hot electrolyte and the colder electrodes, which is a consequence of the release of resistive heat during operation. We present a linear stability analysis of the state of pure thermal conduction in combination with three-dimensional direct numerical simulations of the nonlinear turbulent evolution on the basis of a pseudospectral method. Five different modes of convection are identified in the configuration, which are partly coupled to each other: RC in the upper electrode, RC with internal heating in the molten salt layer, and MC at both interfaces between molten salt and electrode as well as anticonvection in the middle layer and lower electrode. The linear stability analysis confirms that the additional Marangoni effect in the present setup increases the growth rates of the linearly unstable modes, i.e., Marangoni and Rayleigh-Bénard instability act together in the molten salt layer. The critical Grashof and Marangoni numbers decrease with increasing middle layer thickness. The calculated thresholds for the onset of convection are found for realistic current densities of laboratory-sized LMBs. The global turbulent heat transfer follows scaling predictions for internally heated RC. The global turbulent momentum transfer is comparable with turbulent convection in the classical Rayleigh-Bénard case. In summary, our studies show that incorporating Marangoni effects generates smaller flow structures, alters the velocity magnitudes, and enhances the turbulent heat transfer across the triple-layer configuration.

  5. Initial multi-parameter detection of atmospheric metal layers by Beijing Na–K lidar

    International Nuclear Information System (INIS)

    Jiao, Jing; Yang, Guotao; Wang, Jihong; Cheng, Xuewu; Du, Lifang; Wang, Zelong; Gong, Wei

    2017-01-01

    Beijing Na–K lidar has been started running in 2010. This lidar has two laser beams: one dye laser emits a 589-nm laser beam for Na layer detection; the other dye laser emits a 770-nm laser beam for K layer detection. Under similar conditions, the echo signal of K layer is only about 2 orders of magnitude smaller than that of Na layer. This lidar has a sufficient Signal Noise Ratio (SNR). The structure and details of potassium layer can be effectively distinguished from a single original echo. Several examples of co-observation of density of Na and K layer showed some different results with previous studies. This lidar not only can supplement the lack of Na and K layer observation at this latitude region, but also provide evidence for the atmospheric sciences and space environment monitoring. - Highlights: • Full-band dual-beam lidar at 40°N. • Detecting sodium and potassium layer simultaneously. • Providing a supplement to the study of atmospheric metal layers and evidence for atmospheric sciences and space and atmospheric sciences and space environment monitoring.

  6. Production of metal fullerene surface layer from various media in the process of steel carbonization

    Directory of Open Access Journals (Sweden)

    KUZEEV Iskander Rustemovich

    2018-04-01

    Full Text Available Studies devoted to production of metal fullerene layer in steels when introducing carbon from organic and inorganic media were performed. Barium carbonate was used as an inorganic medium and petroleum pitch was used as an organic medium. In order to generate the required amount of fullerenes in the process of steel samples carbonization, optimal temperature mode was found. The higher temperature, absorption and cohesive effects become less important and polymeric carbon structures destruction processes become more important. On the bottom the temperature is limited by petroleum pitch softening temperature and its transition to low-viscous state in order to enhance molecular mobility and improve the possibility of their diffusion to metal surface. Identification of fullerenes in the surface modified layer was carried out following the methods of IR-Fourier spectrometry and high-performance liquid chromatography. It was found out that nanocarbon structures, formed during carbonization in barium carbonate and petroleum pitch mediums, possess different morphology. In the process of metal carbonization from carbonates medium, the main role in fullerenes synthesis is belonged to catalytic effect of surface with generation of endohedral derivatives in the surface layer; but in the process of carbonization from pitch medium fullerenes are formed during crystallization of the latter and crystallization centers are of fullerene type. Based on theoretical data and dataof spectral and chromatographic analysis, optimal conditions of metal fullerene layer formation in barium carbonate and petroleum pitch mediums were determined. Low cohesion of layer, modified in barium carbonate medium, with metal basis was discovered. That was caused by limited carbon diffusion in the volume of α-Fe. According to the detected mechanism of fullerenes formation on steel surface in gaseous medium, fullerenes are formed on catalytic centers – ferrum atoms, forming thin metal

  7. Structure and nano-mechanical characteristics of surface oxide layers on a metallic glass.

    Science.gov (United States)

    Caron, A; Qin, C L; Gu, L; González, S; Shluger, A; Fecht, H-J; Louzguine-Luzgin, D V; Inoue, A

    2011-03-04

    Owing to their low elastic moduli, high specific strength and excellent processing characteristics in the undercooled liquid state, metallic glasses are promising materials for applications in micromechanical systems. With miniaturization of metallic mechanical components down to the micrometer scale, the importance of a native oxide layer on a glass surface is increasing. In this work we use TEM and XPS to characterize the structure and properties of the native oxide layer grown on Ni(62)Nb(38) metallic glass and their evolution after annealing in air. The thickness of the oxide layer almost doubled after annealing. In both cases the oxide layer is amorphous and consists predominantly of Nb oxide. We investigate the friction behavior at low loads and in ambient conditions (i.e. at T = 295 K and 60% air humidity) of both as-cast and annealed samples by friction force microscopy. After annealing the friction coefficient is found to have significantly increased. We attribute this effect to the increase of the mechanical stability of the oxide layer upon annealing.

  8. Solar Cycle Response and Long-Term Trends in the Mesospheric Metal Layers

    Science.gov (United States)

    Dawkins, E. C. M.; Plane, J. M. C.; Chipperfield, M.; Feng, W.; Marsh, D. R.; Hoffner, J.; Janches, D.

    2016-01-01

    The meteoric metal layers (Na, Fe, and K) which form as a result of the ablation of incoming meteors act as unique tracers for chemical and dynamical processes that occur within the upper mesosphere lower thermosphere region. In this work, we examine whether these metal layers are sensitive Fe indicators of decadal long-term changes within the upper atmosphere. Output from a whole-atmosphere climate model is used to assess the response of the Na, K, and Fe layers across a 50 year period (1955-2005). At short timescales, the K layer has previously been shown to exhibit a very different seasonal behavior compared to the other metals. Here we show that this unusual behavior is also exhibited at longer time scales (both the 11 year solar cycle and 50 year periods), where K displays a much more pronounced response to atmospheric temperature changes than either Na or Fe. The contrasting solar cycle behavior of the K and Na layers predicted by the model is confirmed using satellite and lidar observations for the period 2004-2013.

  9. Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

    Science.gov (United States)

    Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

    2014-06-01

    A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

  10. Studies of proximity-effect and tunneling in YBCO/metal layered films

    Energy Technology Data Exchange (ETDEWEB)

    Greene, L.H.; Barner, J.B.; Feldmann, W.L.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Tarascon, J.M.; Wernick, J.H. (Bellcore, Red Bank, NJ (USA)); Giroud, M. (CRTBT-CNRS, Grenoble (France)); Rowell, J.M. (Conductus, Sunnyvale, CA (USA))

    1989-12-01

    The short coherence length of the high-Tc superconductors, coupled with their tendency to form non-superconducting surface layers, accounts for the difficulty in achieving good tunnel junctions. A proximity layer of a longer coherence length normal metal (N) is expected to ''draw out'' Cooper pairs. Our goal is to fabricate reproducible, planar tunnel junctions of SNIS layered structures for proximity tunneling spectroscopy. Such structures of YBCO/N/I/Pb and SNS structures of YBCO/N/Pb indicate that the normal metal produces a low resistance contact to the YBCO surface with a supercurrent observed in the SNS. The insulating barrier in the SNIS is reproducible, insulating and continuous: A sharp Pb gap and phonons from the counter-electrode are routinely observed. (orig.).

  11. Studies of proximity-effect and tunneling in YBCO/metal layered films

    International Nuclear Information System (INIS)

    Greene, L.H.; Barner, J.B.; Feldmann, W.L.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Tarascon, J.M.; Wernick, J.H.; Giroud, M.; Rowell, J.M.

    1989-01-01

    The short coherence length of the high-T c superconductors, coupled with their tendency to form non-superconducting surface layers, accounts for the difficulty in achieving good tunnel junctions. A proximity layer of a longer coherence length normal metal (N) is expected to draw out Cooper pairs. The authors' goal is to fabricate reproducible, planar tunnel junctions of SNIS layered structures for proximity tunneling spectroscopy. They discuss how such structures of YBCO/N/I/Pb and SNS structures of YBCO/N/Pb indicate that the normal metal produces a low resistance contact to the YBCO surface with a supercurrent observed in the SNS. The insulating barrier in the SNIS is reproducible, insulating and continuous: A sharp Pb gap and phonons from the counter-electrode are routinely observed

  12. Optical XOR gate

    Science.gov (United States)

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  13. Surface metal standards produced by ion implantation through a removable layer

    International Nuclear Information System (INIS)

    Schueler, B.W.; Granger, C.N.; McCaig, L.; McKinley, J.M.; Metz, J.; Mowat, I.; Reich, D.F.; Smith, S.; Stevie, F.A.; Yang, M.H.

    2003-01-01

    Surface metal concentration standards were produced by ion implantation and investigated for their suitability to calibrate surface metal measurements by secondary ion mass spectrometry (SIMS). Single isotope implants were made through a 100 nm oxide layer on silicon. The implant energies were chosen to place the peak of the implanted species at a depth of 100 nm. Subsequent removal of the oxide layer was used to expose the implant peak and to produce controlled surface metal concentrations. Surface metal concentration measurements by time-of-flight SIMS (TOF-SIMS) with an analysis depth of 1 nm agreed with the expected surface concentrations of the implant standards with a relative mean standard deviation of 20%. Since the TOF-SIMS relative sensitivity factors (RSFs) were originally derived from surface metal measurements of surface contaminated silicon wafers, the agreement implies that the implant standards can be used to measure RSF values. The homogeneity of the surface metal concentration was typically <10%. The dopant dose remaining in silicon after oxide removal was measured using the surface-SIMS protocol. The measured implant dose agreed with the expected dose with a mean relative standard deviation of 25%

  14. Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

    International Nuclear Information System (INIS)

    Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

    2007-01-01

    The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

  15. MATERIAL DEPENDENCE OF TEMPERATURE DISTRIBUTION IN MULTI-LAYER MULTI-METAL COOKWARE

    Directory of Open Access Journals (Sweden)

    MOHAMMADREZA SEDIGH

    2017-09-01

    Full Text Available Laminated structure is becoming more popular in cookware markets; however, there seems to be a lack of enough scientific studies to evaluate its pros and cons, and to show that how it functions. A numerical model using a finite element method with temperature-dependent material properties has been performed to investigate material and layer dependence of temperature distribution in multi-layer multi-metal plate exposed to irregular heating. Behavior of two parameters including mean temperature value and uniformity on the inner surface of plate under variations of thermal properties and geometrical conditions have been studied. The results indicate that conductive metals used as first layer in bi-layer plates have better thermal performance than those used in the second layer. In addition, since cookware manufacturers increasingly prefer to use all-clad aluminium plate, recently, this structure is analysed in the present study as well. The results show all-clad copper and aluminum plate possesses lower temperature gradient compared with single layer aluminum and all-clad aluminum core plates.

  16. Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

    Science.gov (United States)

    Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

    2017-12-01

    An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

  17. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-01-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

  18. Highly sensitive multi-layer pressure sensor with an active nanostructured layer of an organic molecular metal

    International Nuclear Information System (INIS)

    Laukhin, V; Lebedev, V; Laukhina, E; Rovira, C; Veciana, J

    2016-01-01

    This work addresses to the modern technologies that need to be instrumented with lightweight highly sensitive pressure sensors. The paper presents the development of a new plain flexible thin pressure sensor using a nanostructured layer of the highly sensitive organic piezoresistive metal β-(BEDT-TTF) 2 I 3 as an active component; BEDT-TTF=bis (ethylenedithio)tetrathiafulvalene. The original construction approach permits one to operate the developed sensor on the principle of electrical resistance variations when its piezoresistive layer is elongated under a pressure increase. The pressure sensing element and a set of gold electrodes were integrated into one compact multi-layer design. The construction was optimized to enable one generic design for pressure ranges from 1 to 400 bar. The pressure tests showed that the sensor is able to control a small pressure change as a well definite electrical signal. So the developed type of the sensors is very attractive as a new generation of compact, lightweight, low-cost sensors that might monitor pressure with a good level of measurement accuracy. (paper)

  19. Synthesizing new types of ultrathin 2D metal oxide nanosheets via half-successive ion layer adsorption and reaction

    Science.gov (United States)

    Gao, Linjie; Li, Yaguang; Xiao, Mu; Wang, Shufang; Fu, Guangsheng; Wang, Lianzhou

    2017-06-01

    Two-dimensional (2D) metal oxide nanosheets have demonstrated their great potential in a broad range of applications. The existing synthesis strategies are mainly preparing 2D nanosheets from layered and specific transition metal oxides. How to prepare the other types of metal oxides as ultrathin 2D nanosheets remains unsolved, especially for metal oxides containing alkali, alkaline earth metal, and multiple metal elements. Herein, we developed a half-successive ion layer adsorption and reaction (SILAR) method, which could synthesize those types of metal oxides as ultrathin 2D nanosheets. The synthesized 2D metal oxides nanosheets are within 1 nm level thickness and 500 m2 · g-1 level surface area. This method allows us to develop many new types of ultrathin 2D metal oxides nanosheets that have never been prepared before.

  20. Formation of nanocrystalline surface layers in various metallic materials by near surface severe plastic deformation

    Directory of Open Access Journals (Sweden)

    Masahide Sato, Nobuhiro Tsuji, Yoritoshi Minamino and Yuichiro Koizumi

    2004-01-01

    Full Text Available The surface of the various kinds of metallic materials sheets were severely deformed by wire-brushing at ambient temperature to achieve nanocrystalline surface layer. The surface layers of the metallic materials developed by the near surface severe plastic deformation (NS-SPD were characterized by means of TEM. Nearly equiaxed nanocrystals with grain sizes ranging from 30 to 200 nm were observed in the near surface regions of all the severely scratched metallic materials, which are Ti-added ultra-low carbon interstitial free steel, austenitic stainless steel (SUS304, 99.99 wt.%Al, commercial purity aluminum (A1050 and A1100, Al–Mg alloy (A5083, Al-4 wt.%Cu alloy, OFHC-Cu (C1020, Cu–Zn alloy (C2600 and Pb-1.5%Sn alloy. In case of the 1050-H24 aluminum, the depth of the surface nanocrystalline layer was about 15 μm. It was clarified that wire-brushing is an effective way of NS-SPD, and surface nanocrystallization can be easily achieved in most of metallic materials.

  1. Exchange coupling in metallic multilayers with a top FeRh layer

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, S., E-mail: yamada@ee.es.osaka-u.ac.jp; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan); Tanikawa, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Hirayama, J. [Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan); Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Taniyama, T. [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2016-05-15

    We study magnetic properties of metallic multilayers with FeRh/ferromagnet interfaces grown by low-temperature molecular beam epitaxy. Room-temperature coercivity of the ferromagnetic layers is significantly enhanced after the growth of FeRh, proving the existence of the exchange coupling between the antiferromagnetic FeRh layer and the ferromagnetic layer. However, exchange bias is not clearly observed probably due to the presence of disordered structures, which result from the lattice strain at the FeRh/ferromagnet interfaces due to the lattice mismatch. We infer that the lattice matched interface between FeRh and ferromagnetic layers is a key parameter for controlling magnetic switching fields in such multilayer systems.

  2. Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

    International Nuclear Information System (INIS)

    Frantsuzov, A. A.; Boyarkina, N. I.; Popov, V. P.

    2008-01-01

    Effective electron mobility μ eff in channels of metal-oxide-semiconductor transistors with a gate length L in the range of 3.8 to 0.34 μm was measured; the transistors were formed on wafers of the silicon-oninsulator type. It was found that μ eff decreases as L is decreased. It is shown that this decrease can be accounted for by the effect of series resistances of the source and drain only if it is assumed that there is a rapid increase in these resistances as the gate voltage is decreased. This assumption is difficult to substantiate. A more realistic model is suggested; this model accounts for the observed decrease in μ eff as L is decreased. The model implies that zones with a mobility lower than that in the middle part of the channel originate at the edges of the gate. An analysis shows that, in this case, the plot of the dependence of 1/μ eff on 1/L should be linear, which is exactly what is observed experimentally. The use of this plot makes it possible to determine both the electron mobility μ 0 in the middle part of the channel and the quantity A that characterizes the zones with lowered mobility at the gate’s edges.

  3. Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li Ning; Choi, Hoi Wai; Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Xu, Jing Ping [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

    2016-09-15

    In this study, GaAs metal-oxide-semiconductor (MOS) capacitors using Y-incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 x 10{sup 11} cm{sup -2} eV{sup -1}), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 x 10{sup -5}A/cm{sup 2} at V{sub fb} + 1 V). These merits should be attributed to the complementary properties of Y{sub 2}O{sub 3} and Ta{sub 2}O{sub 5}:Y can effectively passivate the large amount of oxygen vacancies in Ta{sub 2}O{sub 5}, while the positively-charged oxygen vacancies in Ta{sub 2}O{sub 5} are capable of neutralizing the effects of the negative oxide charges in Y{sub 2}O{sub 3}. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Growth of micrometric oxide layers to explore laser decontamination of metallic surfaces

    Directory of Open Access Journals (Sweden)

    Carvalho Luisa

    2017-01-01

    Full Text Available The nuclear industry produces a wide range of radioactive waste in terms of hazard level, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop safe techniques for dismantling and for decontamination, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. In this paper we propose a method for the creation of oxide layers on stainless steel 304L with europium (Eu as contaminant. This technique consists in spraying an Eu-solution on stainless steel samples. The specimens are firstly treated with a pulsed nanosecond laser after which the steel samples are placed in a 873 K furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer were analyzed by scanning electron microscopy coupled to an energy-dispersive X-ray microanalyzer, as well as by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm–4.5 μm depending on the laser treatment parameters and the heating duration. These contaminated oxides had a ‘duplex structure’ with a mean concentration of the order of 6 × 1016 atoms/cm2 (15 μg/cm2 of europium in the volume of the oxide layer. It appears that europium implementation prevented the oxide growth in the furnace. Nevertheless, the presence of the contamination had no impact on the thickness of the oxide layers obtained by preliminary laser treatment. These oxide layers were used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

  5. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    Directory of Open Access Journals (Sweden)

    Takeshi Aoki

    2015-08-01

    Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  6. Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

    NARCIS (Netherlands)

    Yuan, Hongtao; Shimotani, Hidekazu; Ye, Jianting; Yoon, Sungjae; Aliah, Hasniah; Tsukazaki, Atsushi; Kawasaki, Masashi; Iwasa, Yoshihiro

    2010-01-01

    The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, and electronics because of the large interfacial capacitance coupling and its ability for high-density charge

  7. Micro-layers of polystyrene film preventing metal oxidation: implications in cultural heritage conservation

    Science.gov (United States)

    Giambi, Francesca; Carretti, Emiliano; Dei, Luigi; Baglioni, Piero

    2014-12-01

    Protection of surfaces directly exposed to the detrimental action of degradative agents (i.e. oxygen, air pollutants and bacteria) is one of the most important challenges in the field of conservation of works of art. Metallic objects are subjected to specific surface corrosion phenomena that, over the years, make mandatory the research of innovative materials that should avoid the direct contact between the metal surface and the weathering agents. In this paper, the set-up, characterisation and application of a new reversible material for preserving metal artefacts are reported. Micro-layers constituted of low-adhesive polystyrene (PS) films obtained from recycling waste packaging materials made of expanded PS were studied. The morphology and thickness of PS films were characterised by optical, atomic force and scanning electron microscopy (SEM). A further check on thickness was carried out by means of visible spectrophotometry doping the films with a hydrophobic dye. Thermal properties of the PS micro-layers were studied by means of differential scanning calorimetry coupled with optical microscopy. Permeability of the PS films to water vapour was also determined. The potential of the low-adhesive PS films, that enabled an easy removal in case of film deterioration, for preventing metal oxidation was investigated on brass specimens by simulating standard artificial corrosion programmes. Morphological and chemical (coupling the energy-dispersive X-rays spectrometry to SEM measurements) analyses carried out on these metal samples showed promising results in terms of surface protection against corrosion.

  8. Post-assembly transformations of porphyrin-containing metal-organic framework (MOF) films fabricated via automated layer-by-layer coordination

    KAUST Repository

    So, Monica; Beyzavi, M. Hassan; Sawhney, Rohan; Shekhah, Osama; Eddaoudi, Mohamed; Al-Juaid, Salih Salem; Hupp, Joseph T.; Farha, Omar K.

    2015-01-01

    Herein, we demonstrate the robustness of layer-by-layer (LbL)-assembled, pillared-paddlewheel-type MOF films toward conversion to new or modified MOFs via solvent-assisted linker exchange (SALE) and post-assembly linker metalation. Further, we show that LbL synthesis can afford MOFs that have proven inaccessible through other de novo strategies.

  9. Magnetic field dependence of the superconducting proximity effect in a two atomic layer thin metallic film

    Energy Technology Data Exchange (ETDEWEB)

    Caminale, Michael; Leon Vanegas, Augusto A.; Stepniak, Agnieszka; Oka, Hirofumi; Fischer, Jeison A.; Sander, Dirk; Kirschner, Juergen [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Germany)

    2015-07-01

    The intriguing possibility to induce superconductivity in a metal, in direct contact with a superconductor, is under renewed interest for applications and for fundamental aspects. The underlying phenomenon is commonly known as proximity effect. In this work we exploit the high spatial resolution of scanning tunneling spectroscopy at sub-K temperatures and in magnetic fields. We probe the differential conductance along a line from a superconducting 9 ML high Pb nanoisland into the surrounding two layer thin Pb/Ag wetting layer on a Si(111) substrate. A gap in the differential conductance indicates superconductivity of the Pb island. We observe an induced gap in the wetting layer, which decays with increasing distance from the Pb island. This proximity length is 21 nm at 0.38 K and 0 T. We find a non-trivial dependence of the proximity length on magnetic field. Surprisingly, we find that the magnetic field does not affect the induced superconductivity up to 0.3 T. However, larger fields of 0.6 T suppress superconductivity in the wetting layer, where the Pb island still remains superconducting. We discuss the unexpected robustness of induced superconductivity in view of the high electronic diffusivity in the metallic wetting layer.

  10. Microstructures and properties of ceramic particle-reinforced metal matrix composite layers produced by laser cladding

    Science.gov (United States)

    Zhang, Qingmao; He, Jingjiang; Liu, Wenjin; Zhong, Minlin

    2005-01-01

    Different weight ratio of titanium, zirconium, WC and Fe-based alloy powders were mixed, and cladded onto a medium carbon steel substrate using a 3kW continuous wave CO2 laser, aiming at producing Ceramic particles- reinforced metal matrix composites (MMCs) layers. The microstructures of the layers are typical hypoeutectic, and the major phases are Ni3Si2, TiSi2, Fe3C, FeNi, MC, Fe7Mo3, Fe3B, γ(residual austenite) and M(martensite). The microstructure morphologies of MMCs layers are dendrites/cells. The MC-type reinforcements are in situ synthesis Carbides which main compositions consist of transition elements Zr, Ti, W. The MC-type particles distributed within dendrite and interdendritic regions with different volume fractions for single and overlapping clad layers. The MMCs layers are dense and free of cracks with a good metallurgical bonding between the layer and substrate. The addition ratio of WC in the mixtures has the remarkable effect on the microhardness of clad layers.

  11. Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.

    Science.gov (United States)

    Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L; Zhang, Qianfan; Zhao, Weisheng

    2015-12-11

    Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

  12. Metal Surface Modification for Obtaining Nano- and Sub-Nanostructured Protective Layers

    Science.gov (United States)

    Ledovskykh, Volodymyr; Vyshnevska, Yuliya; Brazhnyk, Igor; Levchenko, Sergiy

    2017-03-01

    Regularities of the phase protective layer formation in multicomponent systems involving inhibitors with different mechanism of protective action have been investigated. It was shown that optimization of the composition of the inhibition mixture allows to obtain higher protective efficiency owing to improved microstructure of the phase layer. It was found that mechanism of the film formation in the presence of NaNO2-PHMG is due to deposition of slightly soluble PHMG-Fe complexes on the metal surface. On the basis of the proposed mechanism, the advanced surface engineering methods for obtaining nanoscaled and sub-nanostructured functional coatings may be developed.

  13. Multiple layered metallic nanostructures for strong surface-enhanced Raman spectroscopy enhancement

    International Nuclear Information System (INIS)

    Xia, Ming; Xie, Ya-Hong; Qiao Kuan; Cheng Zhiyuan

    2016-01-01

    We report a systematic study on a practical way of patterning metallic nanostructures to achieve high surface-enhanced Raman spectroscopy (SERS) enhancement factors (EFs) and high hot-spot density. By simply superimposing a 1-layer Au nanotriangle array on another to form a multilayer nanotriangle array, the SERS signal can be enhanced by 2 orders of magnitude compared with a 1-layer nanotriangle array. The drastic increases in the SERS EF and the hot spot density of the multilayer Au nanotriangle array are due to the increase in the number of gaps formed between Au nanotriangles and the decrease of the gap width. (author)

  14. Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

    International Nuclear Information System (INIS)

    Zhou, Y.M.; He, M.Z.; Xie, Z.

    2014-01-01

    Highlights: • Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum. • The Ti/TaN double layers improved the adhesion with Cu thin films and showed good diffusion barrier between Cu and SiO 2 /Si up to the annealing condition. • The failure mechanism of Ti/TaN bi-layer is similar with the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si. - Abstract: Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10 −3 Pa. Ti/TaN double layers were formed on SiO 2 /Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO 2 /Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO 2 /Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu–Si compounds like Cu 3 Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO 2 /Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si

  15. Numerical simulation of a metal corrosion for a point defect for a organic protection layer

    International Nuclear Information System (INIS)

    Vautrin-Ul, Ch.; Chausse, A.; Stafiej, J.; Badiali, J.P.

    2005-01-01

    The safety of radioactive wastes disposal requires a big knowledge on their aging facing a corrosive environment. The corrosion is a complex phenomenon which implies many processes bound to the physic and the chemistry of the system. This approach proposes, from a little number of simple processes, numerical simulation which will define theses complex phenomenon. The presented model is a 2 dimension model at a mesoscopic scale and based on cellular automates. It allows the simulation of a metal evolution, protected by a polymer layer and in contact at one point with a corrosive media at a defect of the layer. (A.L.B.)

  16. Thermal diffusivity of a metallic thin layer using the time-domain thermo reflectance technique

    International Nuclear Information System (INIS)

    Battaglia, J-L; Kusiak, A; Rossignol, C; Chigarev, N

    2007-01-01

    The time domain thermo reflectance (TDTR) is widely used in the field of acoustic and thermal characterization of thin layers at the nano and micro scale. In this paper, we propose to derive a simple analytical expression of the thermal diffusivity of the layer. This relation is based on the analytical solution of one-dimensional heat transfer in the medium using integral transforms. For metals, the two-temperature model shows that the capacitance effect at the short times is essentially governed by the electronic contribution

  17. Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

    Science.gov (United States)

    Carvalho, Luisa; Pacquentin, Wilfried; Tabarant, Michel; Maskrot, Hicham; Semerok, Alexandre

    2017-09-01

    The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu) as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a `duplex structure' with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

  18. Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

    Directory of Open Access Journals (Sweden)

    Carvalho Luisa

    2017-01-01

    Full Text Available The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a ‘duplex structure’ with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

  19. Synthesis, characterization and application of two-dimensional layered metal hydroxides for environmental remediation purposes

    Science.gov (United States)

    Machingauta, Cleopas

    Two-dimensional layered nano composites, which include layered double hydroxides (LDHs), hydroxy double salts (HDSs) and layered hydroxide salts (LHSs) are able to intercalate different molecular species within their gallery space. These materials have a tunable structural composition which has made them applicable as fire retardants, adsorbents, catalysts, catalyst support materials, and ion exchangers. Thermal treatment of these materials results in destruction of the layers and formation of mixed metal oxides (MMOs) and spinels. MMOs have the ability to adsorb anions from solution and may also regenerate layered structures through a phenomenon known as memory effect. Zinc-nickel hydroxy nitrate was used for the uptake of a series of halogenated acetates (HAs). HAs are pollutants introduced into water systems as by-products of water chlorination and pesticide degradation; their sequestration from water is thus crucial. Optimization of layered materials for controlled uptake requires an understanding of their ion-exchange kinetics and thermodynamics. Exchange kinetics of these anions was monitored using ex-situ PXRD, UV-vis, HPLC and FTIR. It was revealed that exchange rates and uptake efficiencies are related to electronic spatial extents and the charge on carboxyl-oxygen atoms. In addition, acetate and nitrate-based HDSs were used to explore how altering the hydroxide layer affects uptake of acetate/nitrate ions. Changing the metal identities affects the interaction of the anions with the layers. From FTIR, we observed that nitrates coordinate in a D3h and Cs/C 2v symmetry; the nitrates in D3h symmetry were easily exchangeable. Interlayer hydrogen bonding was also revealed to be dependent on metal identity. Substituting divalent cations with trivalent cations produces materials with a higher charge density than HDSs and LHSs. A comparison of the uptake efficiency of zinc-aluminum, zinc-gallium and zinc-nickel hydroxy nitrates was performed using trichloroacetic

  20. Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Sengupta, Parijat; Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215 (United States)

    2016-05-23

    We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; the spin Hall conductivity of WSe{sub 2} was found to be larger.

  1. Melt layer erosion of metallic armour targets during off-normal events in tokamaks

    International Nuclear Information System (INIS)

    Bazylev, B.; Wuerz, H.

    2002-01-01

    Melt layer erosion by melt motion is the dominating erosion mechanism for metallic armours under high heat loads. A 1-D fluid dynamics simulation model for calculation of melt motion was developed and validated against experimental results for tungsten from the e-beam facility JEBIS and beryllium from the e-beam facility JUDITH. The driving force in each case is the gradient of the surface tension. Due to the high velocity which develops in the Be melt considerable droplet splashing occurs

  2. Melt layer erosion of metallic armour targets during off-normal events in tokamaks

    Science.gov (United States)

    Bazylev, B.; Wuerz, H.

    2002-12-01

    Melt layer erosion by melt motion is the dominating erosion mechanism for metallic armours under high heat loads. A 1-D fluid dynamics simulation model for calculation of melt motion was developed and validated against experimental results for tungsten from the e-beam facility JEBIS and beryllium from the e-beam facility JUDITH. The driving force in each case is the gradient of the surface tension. Due to the high velocity which develops in the Be melt considerable droplet splashing occurs.

  3. Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

    Science.gov (United States)

    Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

    2018-04-01

    In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

  4. Transient heat transfer phenomena of the liquid metal layer cooled by overlying R113 coolant

    International Nuclear Information System (INIS)

    Cho, J. S.; Seo, K. R.; Jung, C. H.; Park, R. J.; Kim, S. B.

    1999-01-01

    To understand the fundamental relationship of the natural convection heat transfer in the molten metal pool and the boiling mechanism of the overlying coolant, experiments were performed for the transient heat transfer of the liquid metal pool with overlying R113 coolant with boiling. The simulant molten pool material is tin (Sn) with the melting temperature of 232 deg C. The metal pool is heated from the bottom surface and the coolant is injected onto the molten metal pool. Tests were conducted by changing the bottom surface boundary condition. The bottom heating condition was varied from 8kW to 14kW. As a result the boiling mechanism of the R113 coolant is changed from the nuclear boiling to film boiling. The Nusselt number and the Rayleigh number in the molten metal pool region obtained as functions of time. Analysis was made for the relationship between the heat flux and the temperature difference of the metal layer surface temperature and the boiling coolant bulk temperature

  5. Prediction of transmittance spectra for transparent composite electrodes with ultra-thin metal layers

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhao; Alford, T. L., E-mail: TA@asu.edu [School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Khorasani, Arash Elhami [ON Semiconductor Corp., Phoenix, Arizona 85005 (United States); Theodore, N. D. [CHD-Fab, Freescale Semiconductor Inc., Tempe, Arizona 85224 (United States); Dhar, A. [Intel Corp., 2501 NW 229th Ave, Hillsboro, Oregon 97124 (United States)

    2015-11-28

    Recent interest in indium-free transparent composite-electrodes (TCEs) has motivated theoretical and experimental efforts to better understand and enhance their electrical and optical properties. Various tools have been developed to calculate the optical transmittance of multilayer thin-film structures based on the transfer-matrix method. However, the factors that affect the accuracy of these calculations have not been investigated very much. In this study, two sets of TCEs, TiO{sub 2}/Au/TiO{sub 2} and TiO{sub 2}/Ag/TiO{sub 2}, were fabricated to study the factors that affect the accuracy of transmittance predictions. We found that the predicted transmittance can deviate significantly from measured transmittance for TCEs that have ultra-thin plasmonic metal layers. The ultrathin metal layer in the TCE is typically discontinuous. When light interacts with the metallic islands in this discontinuous layer, localized surface plasmons are generated. This causes extra light absorption, which then leads to the actual transmittance being lower than the predicted transmittance.

  6. Design technology co-optimization for 14/10nm metal1 double patterning layer

    Science.gov (United States)

    Duan, Yingli; Su, Xiaojing; Chen, Ying; Su, Yajuan; Shao, Feng; Zhang, Recco; Lei, Junjiang; Wei, Yayi

    2016-03-01

    Design and technology co-optimization (DTCO) can satisfy the needs of the design, generate robust design rule, and avoid unfriendly patterns at the early stage of design to ensure a high level of manufacturability of the product by the technical capability of the present process. The DTCO methodology in this paper includes design rule translation, layout analysis, model validation, hotspots classification and design rule optimization mainly. The correlation of the DTCO and double patterning (DPT) can optimize the related design rule and generate friendlier layout which meets the requirement of the 14/10nm technology node. The experiment demonstrates the methodology of DPT-compliant DTCO which is applied to a metal1 layer from the 14/10nm node. The DTCO workflow proposed in our job is an efficient solution for optimizing the design rules for 14/10 nm tech node Metal1 layer. And the paper also discussed and did the verification about how to tune the design rule of the U-shape and L-shape structures in a DPT-aware metal layer.

  7. Single-Layer Limit of Metallic Indium Overlayers on Si(111).

    Science.gov (United States)

    Park, Jae Whan; Kang, Myung Ho

    2016-09-09

    Density-functional calculations are used to identify one-atom-thick metallic In phases grown on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of metallic properties. We predict two metastable single-layer In phases, one sqrt[7]×sqrt[3] phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other sqrt[7]×sqrt[7] phase with 1.43 ML, which indeed agree with experimental evidences. Both phases reveal quasi-1D arrangements of protruded In atoms, leading to 2D-metallic but anisotropic band structures and Fermi surfaces. This directional feature contrasts with the free-electron-like In-overlayer properties that are known to persist up to the double-layer thickness, implying that the ultimate 2D limit of In overlayers may have been achieved in previous studies of double-layer In phases.

  8. A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

    International Nuclear Information System (INIS)

    Luo Xiao-Rong; Hu Gang-Yi; Zhang Zheng-Yuan; Luo Yin-Chun; Fan Ye; Wang Xiao-Wei; Fan Yuan-Hang; Cai Jin-Yong; Wang Pei; Zhou Kun

    2013-01-01

    A low specific on-resistance (R on,sp ) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates, which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R on,sp of 4.151 mΩ·cm 2 (V GS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    Science.gov (United States)

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  10. Thin layer activation : on-line monitoring of metal loss in process plant

    International Nuclear Information System (INIS)

    Boulton, L.H.; Wallace, G.

    1993-01-01

    Corrosion, erosion and wear of metals is a common cause of failure in some process plant and equipment. Monitoring of these destructive effects has been done for many years to help plant engineers minimise the damage, in order to avoid unexpected failures and unscheduled shutdowns. Traditional methods of monitoring, such as standard NDT techniques, inform the engineer of what has happened, providing data such as culmulative loss of wall thickness. The modern approach to monitoring however, is to employ a technique which gives both current loss rates as well as integrated losses. Thin Layer Activation (TLA) provides on-line monitoring of corrosion, erosion and wear of metals, to a high degree of accuracy. It also gives cumulative information which can be backed up with weight-loss results if required. Thus current rather than historical loss rates are measured before any significant loss of metal has occurred. (author). 14 refs., 2 figs

  11. Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe 2

    KAUST Repository

    Zhang, Chendong

    2015-09-21

    By using a comprehensive form of scanning tunneling spectroscopy, we have revealed detailed quasi-particle electronic structures in transition metal dichalcogenides, including the quasi-particle gaps, critical point energy locations, and their origins in the Brillouin zones. We show that single layer WSe surprisingly has an indirect quasi-particle gap with the conduction band minimum located at the Q-point (instead of K), albeit the two states are nearly degenerate. We have further observed rich quasi-particle electronic structures of transition metal dichalcogenides as a function of atomic structures and spin-orbit couplings. Such a local probe for detailed electronic structures in conduction and valence bands will be ideal to investigate how electronic structures of transition metal dichalcogenides are influenced by variations of local environment.

  12. Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe 2

    KAUST Repository

    Zhang, Chendong; Chen, Yuxuan; Johnson, Amber; Li, Ming-yang; Li, Lain-Jong; Mende, Patrick C.; Feenstra, Randall M.; Shih, Chih Kang

    2015-01-01

    By using a comprehensive form of scanning tunneling spectroscopy, we have revealed detailed quasi-particle electronic structures in transition metal dichalcogenides, including the quasi-particle gaps, critical point energy locations, and their origins in the Brillouin zones. We show that single layer WSe surprisingly has an indirect quasi-particle gap with the conduction band minimum located at the Q-point (instead of K), albeit the two states are nearly degenerate. We have further observed rich quasi-particle electronic structures of transition metal dichalcogenides as a function of atomic structures and spin-orbit couplings. Such a local probe for detailed electronic structures in conduction and valence bands will be ideal to investigate how electronic structures of transition metal dichalcogenides are influenced by variations of local environment.

  13. Neutron scattering investigation of layer-bending modes in alkali-metal--graphite intercalation compounds

    International Nuclear Information System (INIS)

    Zabel, H.; Kamitakahara, W.A.; Nicklow, R.M.

    1982-01-01

    Phonon dispersion curves for low-frequency transverse modes propagating in the basal plane have been measured in the alkali-metal--graphite intercalation compounds KC 8 , CsC 8 , KC 24 , and RbC 24 by means of neutron spectroscopy. The acoustic branches show an almost quadratic dispersion relation at small q, characteristic of strongly layered materials. The optical branches of stage-1 compounds can be classified as either graphitelike branches showing dispersion, or as almost dispersionless alkali-metal-like modes. Macroscopic shear constants C 44 and layer-bending moduli have been obtained for the intercalation compounds by analyzing the data in terms of a simple semicontinuum model. In stage-2 compounds, a dramatic softening of the shear constant by about a factor of 8 compared with pure graphite has been observed. Low-temperature results on KC 24 indicate the opening of a frequency gap near the alkali-metal Brillouin-zone boundary, possibly due to the formation of the alkali-metal superstructure

  14. Solid-state chelation of metal ions by ethylenediaminetetraacetate intercalated in a layered double hydroxide.

    Science.gov (United States)

    Tarasov, Konstantin A; O'Hare, Dermot; Isupov, Vitaly P

    2003-03-24

    The solid-state chelation of transition metal ions (Co(2+), Ni(2+), and Cu(2+)) from aqueous solutions into the lithium aluminum layered double hydroxide ([LiAl(2)(OH)(6)]Cl x 0.5H(2)O or LDH) which has been pre-intercalated with EDTA (ethylenediaminetetraacetate) ligand has been investigated. The intercalated metal cations form [M(edta)](2)(-) complexes between the LDH layers as indicated by elemental analysis, powder X-ray diffraction, and IR and UV-vis spectroscopies. If metal chloride or nitrate salts are used in the reaction with the LDH then co-intercalation of either the Cl(-) or NO(3)(-) anions is observed. In the case of metal acetate salts the cations intercalate without the accompanying anion. This can be explained by the different intercalation selectivity of the anions in relation to the LDH. In the latter case the introduction of the positive charge into LDH structure was compensated for by the release from the solid of the equivalent quantity of lithium and hydrogen cations. Time-resolved in-situ X-ray diffraction measurements have revealed that the chelation/intercalation reactions proceed very quickly. The rate of the reaction found for nickel acetate depends on concentration as approximately k[Ni(Ac)(2)](3).

  15. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  16. Effect of biomolecules adsorption on oxide layers developed on metallic materials used in cooling water systems

    International Nuclear Information System (INIS)

    Torres-Bautista, Blanca-Estela

    2014-01-01

    This thesis was carried out in the frame of the BIOCOR ITN European project, in collaboration with the industrial partner RSE S.p.A. (Italy). Metallic materials commonly used in cooling systems of power plants may be affected by bio-corrosion induced by biofilm formation. The objective of this work was to study the influence of biomolecules adsorption, which is the initial stage of biofilm formation, on the electrochemical behaviour and the surface chemical composition of three metallic materials (70Cu-30Ni alloy, 304L stainless steel and titanium) in seawater environments. In a first step, the interactions between a model protein, the bovine serum albumin (BSA), and the surface of these materials were investigated. Secondly, tightly bound (TB) and loosely bound (LB) extracellular polymeric substances (EPS), that play a fundamental role in the different stages of biofilm formation, maturation and maintenance, were extracted from Pseudomonas NCIMB 2021 marine strain, and their effects on oxide layers were also evaluated. For that purpose, electrochemical measurements (corrosion potential E(corr) vs time, polarization curves and electrochemical impedance spectroscopy (EIS)) performed during the very first steps of oxide layers formation (1 h immersion time) were combined to surface analysis by X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ions mass spectrometry (ToF-SIMS). Compared to 70Cu-30Ni alloy in static artificial seawater (ASW) without biomolecules, for which a thick duplex oxide layer (outer redeposited Cu 2 O layer and inner oxidized nickel layer) is shown, the presence of BSA, TB EPS and LB EPS leads to a mixed oxide layer (oxidized copper and nickel) with a lower thickness. In the biomolecules-containing solutions, this oxide layer is covered by an adsorbed organic layer, mainly composed of proteins. A model is proposed to analyse impedance data obtained at E(corr). The results show a slow-down of the anodic reaction in the presence

  17. Melt layer macroscopic erosion of tungsten and other metals under plasma heat loads simulating ITER off-normal events

    International Nuclear Information System (INIS)

    Garkusha, I.E.; Bandura, A.N.; Byrka, O.V.; Kulik, N.V.; Landman, I.; Wuerz, H.

    2002-01-01

    This paper is focused on experimental analysis of metal layer erosion and droplet splashing of tungsten and other metals under heat loads typical for ITER FEAT off-normal events,such as disruptions and VDE's. Plasma pressure gradient action on melt layer results in erosion crater formation with mountains of displaced material at the crater edge. It is shown that macroscopic motion of melt layer and surface cracking are the main factors responsible for tungsten damage. Weight loss measurements of all exposed materials demonstrate inessential contribution of evaporation process to metals erosion

  18. Micro-EDXRF surface analyses of a bronze spear head: Lead content in metal and corrosion layers

    International Nuclear Information System (INIS)

    Figueiredo, E.; Valerio, P.; Araujo, M.F.; Senna-Martinez, J.C.

    2007-01-01

    A bronze spear head from Central Portugal dated to Late Bronze Age has been analyzed by non-destructive micro-EDXRF in the metal surface and corrosion layers. The artifact had previously been analyzed using a conventional EDXRF spectrometer having a larger incident beam. The quantification of the micro-EDXRF analyses showed that lead content in corrosion layers can reach values up to four times higher than the content determined in the metal surface. Results obtained with the higher energy incident beam from the EDXRF equipment, although referring mainly to the corrosion layers, seem to suffer some influence from the surface composition of the metallic alloy

  19. Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok.1777@yahoo.com; Ahluwalia, P.K., E-mail: pk_ahluwalia7@yahoo.com

    2014-02-25

    Graphical abstract: We present electronic transport and dielectric response of layered transition metal dichalcogenides nanowires and nanoribbons. Illustration 1: Conductance (G) and corresponding local density of states(LDOS) for LTMDs wires at applied bias. I–V characterstics are shown in lowermost panels. Highlights: • The studied configurations show metallic/semiconducting nature. • States around the Fermi energy are mainly contributed by the d orbitals of metal atoms. • The studied configurations show non-linear current–voltage (I–V) characteristics. • Additional plasmonic features at low energy have been observed for both wires and ribbons. • Dielectric functions for both wires and ribbons are anisotropic (isotropic) at low (high) energy range. -- Abstract: We present first principle study of the electronic transport and dielectric properties of nanowires and nanoribbons of layered transition metal dichalcogenides (LTMDs), MX{sub 2} (M = Mo, W; X = S, Se, Te). The studied configuration shows metallic/semiconducting nature and the states around the Fermi energy are mainly contributed by the d orbitals of metal atoms. Zero-bias transmission show 1G{sub 0} conductance for the ribbons of MoS{sub 2} and WS{sub 2}; 2G{sub 0} conductance for MoS{sub 2}, WS{sub 2}, WSe{sub 2} wires, and ribbons of MoTe{sub 2} and WTe{sub 2}; and 3G{sub 0} conductance for WSe{sub 2} ribbon. The studied configurations show non-linear current–voltage (I–V) characteristics. Negative differential conductance (NDC) has also been observed for the nanoribbons of the selenides and tellurides of both Mo and W. Furthermore, additional plasmonic features below 5 eV energy have been observed for both wires and ribbons as compared to the corresponding monolayers, which is found to be red-shifted on going from nanowires to nanoribbons.

  20. Effective self-purification of polynary metal electroplating wastewaters through formation of layered double hydroxides.

    Science.gov (United States)

    Zhou, Ji Zhi; Wu, Yue Ying; Liu, Chong; Orpe, Ajay; Liu, Qiang; Xu, Zhi Ping; Qian, Guang Ren; Qiao, Shi Zhang

    2010-12-01

    Heavy metal ions (Ni(2+), Zn(2+), and Cr(3+)) can be effectively removed from real polynary metal ions-bearing electroplating wastewaters by a carbonation process, with ∼99% of metal ions removed in most cases. The synchronous formation of layered double hydroxide (LDH) precipitates containing these metal ions was responsible for the self-purification of wastewaters. The constituents of formed polynary metals-LDHs mainly depended on the Ni(2+):Zn(2+):Cr(3+) molar ratio in wastewaters. LDH was formed at pH of 6.0-8.0 when the Ni(2+)/Zn(2+) molar ratio ≥ 1 where molar fraction of trivalent metal in the wastewaters was 0.2-0.4, otherwise ZnO, hydrozincite, or amorphous precipitate was observed. In the case of LDH formation, the residual concentration of Ni(2+), Zn(2+), and Cr(3+) in the treated wastewaters was very low, about 2-3, ∼2, and ∼1 mg/L, respectively, at 20-80 °C and pH of 6.0-8.0, indicating the effective incorporation of heavy metal ions into the LDH matrix. Furthermore, the obtained LDH materials were used to adsorb azoic dye GR, with the maximum adsorption amount of 129-134 mg/g. We also found that the obtained LDHs catalyzed more than 65% toluene to decompose at 350 °C under ambient pressure. Thus the current research has not only shown effective recovery of heavy metal ions from the electroplating wastewaters in an environmentally friendly process but also demonstrated the potential utilization of recovered materials.

  1. Water-gel for gating graphene transistors.

    Science.gov (United States)

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

  2. GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

    Science.gov (United States)

    Han, Kefeng; Zhu, Lin

    2017-09-01

    In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, in which a metal-oxide-semiconductor gate with high-dielectric-constant HfO2 as an insulating dielectric is employed to replace the traditional GaN HEMT Schottky gate. A 0.5 μm gate length GaN MOSHEMT was fabricated based on the proposed structure, the {{{Al}}}0.28{{{Ga}}}0.72{{N}} barrier layer is partially etched to produce a higher transconductance without deteriorating the transport characteristics of the two-dimensional electron gas in the channel, the gate dielectric is HfO2 deposited by atomic layer deposition. Current-voltage characteristics and radio frequency characteristics are obtained after device preparation, the maximum current density of the device is 900 mA mm-1, the source-drain breakdown voltage is 75 V, gate current is significantly suppressed and the forward gate voltage swing range is about ten times higher than traditional GaN HEMTs, the GaN MOSHEMT also demonstrates radio frequency characteristics comparable to traditional GaN HEMTs with the same gate length.

  3. Double layer resist process scheme for metal lift-off with application in inductive heating of microstructures

    DEFF Research Database (Denmark)

    Ouattara, Lassana; Knutzen, Michael; Keller, Stephan Urs

    2010-01-01

    We present a new method to define metal electrodes on top of high-aspect-ratio microstructures using standard photolithography equipment and a single chromium mask. A lift-off resist (LOR) layer is implemented in an SU-8 photolithography process to selectively remove metal at the end of the proce......We present a new method to define metal electrodes on top of high-aspect-ratio microstructures using standard photolithography equipment and a single chromium mask. A lift-off resist (LOR) layer is implemented in an SU-8 photolithography process to selectively remove metal at the end...

  4. Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

    Science.gov (United States)

    Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

    2018-01-01

    We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

  5. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  6. Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2018-01-01

    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

  7. Assembly, Structure, and Functionality of Metal-Organic Networks and Organic Semiconductor Layers at Surfaces

    Science.gov (United States)

    Tempas, Christopher D.

    Self-assembled nanostructures at surfaces show promise for the development of next generation technologies including organic electronic devices and heterogeneous catalysis. In many cases, the functionality of these nanostructures is not well understood. This thesis presents strategies for the structural design of new on-surface metal-organic networks and probes their chemical reactivity. It is shown that creating uniform metal sites greatly increases selectivity when compared to ligand-free metal islands. When O2 reacts with single-site vanadium centers, in redox-active self-assembled coordination networks on the Au(100) surface, it forms one product. When O2 reacts with vanadium metal islands on the same surface, multiple products are formed. Other metal-organic networks described in this thesis include a mixed valence network containing Pt0 and PtII and a network where two Fe centers reside in close proximity. This structure is stable to temperatures >450 °C. These new on-surface assemblies may offer the ability to perform reactions of increasing complexity as future heterogeneous catalysts. The functionalization of organic semiconductor molecules is also shown. When a few molecular layers are grown on the surface, it is seen that the addition of functional groups changes both the film's structure and charge transport properties. This is due to changes in both first layer packing structure and the pi-electron distribution in the functionalized molecules compared to the original molecule. The systems described in this thesis were studied using high-resolution scanning tunneling microscopy, non-contact atomic force microscopy, and X-ray photoelectron spectroscopy. Overall, this work provides strategies for the creation of new, well-defined on-surface nanostructures and adds additional chemical insight into their properties.

  8. ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

    Science.gov (United States)

    Pavlidis, S.; Bayraktaroglu, B.; Leedy, K.; Henderson, W.; Vogel, E.; Brand, O.

    2017-11-01

    The suitability of atomic layer deposited (ALD) titanium oxide (TiO x ) as a top gate dielectric and passivation layer for indium gallium zinc oxide (InGaZnO115) ion sensitive field effect transistors (ISFETs) is investigated. TiO x is an attractive barrier material, but reports of its use for InGaZnO thin film transistor (TFT) passivation have been conflicting thus far. In this work, it is found that the passivated TFT’s behavior depends on the TiO x deposition temperature, affecting critical device characteristics such as threshold voltage, field-effect mobility and sub-threshold swing. An O2 annealing step is required to recover TFT performance post passivation. It is also observed that the positive bias stress response of the passivated TFTs improves compared the original bare device. Secondary ion mass spectroscopy excludes the effects of hydrogen doping and inter-diffusion as sources of the temperature-dependent performance change, therefore indicating that oxygen gettering induced by TiO x passivation is the likely source of oxygen vacancies and, consequently, carriers in the InGaZnO film. It is also shown that potentiometric sensing using ALD TiO x exhibits a near Nernstian response to pH change, as well as minimizes V TH drift in TiO x passivated InGaZnO TFTs immersed in an acidic liquid. These results add to the understanding of InGaZnO passivation effects and underscore the potential for low-temperature fabricated InGaZnO ISFETs to be used as high-performance mobile chemical sensors.

  9. Linear gate

    International Nuclear Information System (INIS)

    Suwono.

    1978-01-01

    A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

  10. Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

    International Nuclear Information System (INIS)

    Guzman, L.; Vettoruzzo, F.; Laidani, N.

    2016-01-01

    ultrathin TiN (20 nm) top layer is able to confer intense blue color to metals.

  11. Heavy Metals Technogenic Pollution of Plough Lands Arable Layer in the Chelyabinsk Region

    Science.gov (United States)

    Mantorova, G. F.

    2017-11-01

    Environmental protection and rational use of natural resources in agriculture are the main directions of this scientific research. Contamination is caused by the substances of chemical, radiation and biological origin above the maximum permissible concentration (MPC). The main source of soil contamination in the arable land, hayfields and pastures is the waste of livestock complexes, agricultural chemicals (fertilizers, pesticides), motor vehicle exhausts, industrial emissions, sewage from settlements, etc. The ecological state of the soil and vegetation cover is largely determined by agricultural activities. The agricultural production technology complicating is accompanied by increase in the degree of environmental risk, especially in the chemicalization of agriculture. Pollution also enters the soil with atmospheric precipitation, surface waste. They are also introduced into the soil layer by soil and groundwater. The most dangerous for human health is considered to be contamination with heavy metals (HM)-lead, mercury and cadmium. However, the concentration of the rest elements is no less harmful. The paradox of heavy metals is that in certain quantities they are necessary to ensure the normal life of plants and organisms but their excess can lead to serious diseases and even death. A nutritional cycle causes harmful compounds to enter the human body and often cause great harm to health. The present work reveals the results of the research of a long-term experience on accumulation and distribution of heavy metals on the arable layer profile depending on the concentration in humus soil and the system of ground processing.

  12. Wear resistance of layers hard faced by the high-alloyed filler metal

    Directory of Open Access Journals (Sweden)

    Dušan Arsić

    2016-10-01

    Full Text Available The objective of this work was to determine the wear resistance of layers hard faced by the high-alloyed filler metal, with or without the austenite inter-layer, on parts that operate at different sliding speeds in conditions without lubrication. The samples were hard faced with the filler metal E 10-UM-60-C with high content of C, Cr and W. Used filler metal belongs into group of alloys aimed for reparatory hard facing of parts damaged by abrasive and erosive wear and it is characterized by high hardness and wear resistance. In experiments, the sliding speed and the normal loading were varied and the wear scar was monitored, based on which the volume of the worn material was calculated analytically. The contact duration time was monitored over the sliding path of 300 mm. The most intensive wear was established for the loading force of 100 N and the sliding speed of 1 m.s-1, though the significant wear was also noticed in conditions of the small loading and speed of 0.25 m.s-1, which was even greater that at larger speeds.

  13. Metal-organophosphine and metal-organophosphonium frameworks with layered honeycomb-like structures.

    Science.gov (United States)

    Humphrey, Simon M; Allan, Phoebe K; Oungoulian, Shaunt E; Ironside, Matthew S; Wise, Erica R

    2009-04-07

    Phosphanotriylbenzenecarboxylic acid (ptbcH(3); P(C(6)H(4)-p-CO(2)H)(3)) and its methyl phosphonium iodide derivative (mptbcH(3)I; {H(3)CP(C(6)H(4)-p-CO(2)H)(3)}I) have been used as organic building blocks in reaction with Zn(ii) salts to obtain a series of related two-dimensional coordination polymers with honeycomb-like networks. The variable coordination number and oxidation states available to phosphorus have been exploited to produce a family of related phosphine coordination materials (PCMs) using a single ligand precursor. The phosphine carboxylate trianion, ptbc(3-), reacted with Zn(ii) to form 3,3-connected undulating hexagonal sheets based on tetrahedral P and Zn nodes, where Zn-ptbc = 1 : 1. When hydroxide was used as an additional framework ligand, Zn(4)(OH)(2) clusters were obtained. The clusters support 6,3-connected bilayers that consist of pairs of fused hexagonal sheets (Zn-ptbc = 2 : 1) with intra-layer pore spaces. The Zn(4)(OH)(2) clusters are also coordinated by solvent, which was preferentially displaced when the bilayer material was synthesized in the presence of ethylene diamine. Treatment of ptbc(3-) with MeI resulted in methylation of the phosphine to give the P(v) phosphonium iodide salt derivative. The formally dianionic methylphosphonium tricarboxylate building block, mptbc(2-), has the same trigonal-pyramidal bridging geometry as the parent phosphine. However, mptbc(2-) reacted with Zn(ii) on a 1 : 1 stoichiometric ratio to give an unusual trilayer sheet polymer that is based exclusively on 3-connected nodes. Solid-state (31)P NMR studies confirmed that the phosphine ligands were resistant to oxidation upon solvothermal reaction under aerobic conditions.

  14. Investigation of porosity and fractal properties of the sintered metal and semiconductor layers in the MDS capacitor structure

    Directory of Open Access Journals (Sweden)

    Skatkov Leonid

    2012-01-01

    Full Text Available MDS capacitor (metal - dielectric - semiconductor is a structure in which metal plate is represented by compact bulk-porous pellets of niobium sintered powder, and semiconductor plate - by pyrolytic layer of MnO2. In the present paper we report the results of investigation of microporosity of sintered Nb and pyrolytic MnO2 and also the fractal properties of semiconductor layer.

  15. Metallization of a Rashba wire by a superconducting layer in the strong-proximity regime

    Science.gov (United States)

    Reeg, Christopher; Loss, Daniel; Klinovaja, Jelena

    2018-04-01

    Semiconducting quantum wires defined within two-dimensional electron gases and strongly coupled to thin superconducting layers have been extensively explored in recent experiments as promising platforms to host Majorana bound states. We study numerically such a geometry, consisting of a quasi-one-dimensional wire coupled to a disordered three-dimensional superconducting layer. We find that, in the strong-coupling limit of a sizable proximity-induced superconducting gap, all transverse subbands of the wire are significantly shifted in energy relative to the chemical potential of the wire. For the lowest subband, this band shift is comparable in magnitude to the spacing between quantized levels that arises due to the finite thickness of the superconductor (which typically is ˜500 meV for a 10-nm-thick layer of aluminum); in higher subbands, the band shift is much larger. Additionally, we show that the width of the system, which is usually much larger than the thickness, and moderate disorder within the superconductor have almost no impact on the induced gap or band shift. We provide a detailed discussion of the ramifications of our results, arguing that a huge band shift and significant renormalization of semiconducting material parameters in the strong-coupling limit make it challenging to realize a topological phase in such a setup, as the strong coupling to the superconductor essentially metallizes the semiconductor. This metallization of the semiconductor can be tested experimentally through the measurement of the band shift.

  16. Characteristics of laser ultrasound interaction with multi-layered dissimilar metals adhesive interface by numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Kuanshuang, E-mail: zkuanshuang@buaa.edu.cn [School of Mechanical Engineering and Automation, BeiHang University, Beijing 100191 (China); Collaborative Innovation Center of Advanced Aero-Engine, Beijing 100191 (China); Zhou, Zhenggan; Zhou, Jianghua; Sun, Guangkai [School of Mechanical Engineering and Automation, BeiHang University, Beijing 100191 (China); Collaborative Innovation Center of Advanced Aero-Engine, Beijing 100191 (China)

    2015-10-30

    Highlights: • We investigate laser generated ultrasound in multi-layered adhesive structure. • We find the difference of waveforms with different probe points. • Probe points and frequency range influence characterization of the damage interface. • Reflection coefficients of longitudinal waves can quantify the void defect. - Abstract: The characteristics of laser-generated ultrasonic wave interaction with multi-layered dissimilar metals adhesive interface are investigated by finite element method (FEM). The physical model of laser-generated ultrasonic wave in the multi-layered dissimilar metals adhesive structure is built. The surface temperature evolution with different laser power densities is analyzed to obtain the parameters of pulsed laser with thermoelastic regime. The differences of laser ultrasonic waves with different center frequencies measured at the center of laser irradiation would verify the interfacial features of adhesive structures. The optimum frequency range and probe point would be beneficial for the detection of the small void defect. The numerical results indicate that the different frequency range and probe points would evidently influence the identification and quantitative characterization of the small void defect. The research findings would lay a foundation for testing interfacial integrity.

  17. A flexible ligand-based wavy layered metal-organic framework for lithium-ion storage.

    Science.gov (United States)

    An, Tiance; Wang, Yuhang; Tang, Jing; Wang, Yang; Zhang, Lijuan; Zheng, Gengfeng

    2015-05-01

    A substantial challenge for direct utilization of metal-organic frameworks (MOFs) as lithium-ion battery anodes is to maintain the rigid MOF structure during lithiation/delithiation cycles. In this work, we developed a flexible, wavy layered nickel-based MOF (C20H24Cl2N8Ni, designated as Ni-Me4bpz) by a solvothermal approach of 3,3',5,5'-tetramethyl-4,4'-bipyrazole (H2Me4bpz) with nickel(II) chloride hexahydrate. The obtained MOF materials (Ni-Me4bpz) with metal azolate coordination mode provide 2-dimensional layered structure for Li(+) intercalation/extraction, and the H2Me4bpz ligands allow for flexible rotation feature and structural stability. Lithium-ion battery anodes made of the Ni-Me4bpz material demonstrate excellent specific capacity and cycling performance, and the crystal structure is well preserved after the electrochemical tests, suggesting the potential of developing flexible layered MOFs for efficient and stable electrochemical storage. Copyright © 2015 Elsevier Inc. All rights reserved.

  18. On the possibility of superluminal energy propagation in a hyperbolic metamaterial of metal-dielectric layers

    Directory of Open Access Journals (Sweden)

    Pi-Gang Luan

    2018-01-01

    Full Text Available The energy propagation of electromagnetic fields in the effective medium of a one-dimensional photonic crystal consisting of dielectric and metallic layers is investigated. We show that the medium behaves like Drude and Lorentz medium, respectively, when the electric field is parallel and perpendicular to the layers. For arbitrary time-varying electromagnetic fields in this medium, the energy density formula is derived. We prove rigorously that the group velocity of any propagating mode obeying the hyperbolic dispersion must be slower than the speed of light in vacuum, taking into account the frequency dependence of the permittivity tensor. That is, it is not possible to have superluminal propagation in this dispersive hyperbolic medium consisting of real dielectric and metallic material layers. The propagation velocity of a wave packet is also studied numerically. This packet velocity is very close to the velocity of the propagating mode having the central frequency and central wave vector of the wave packet. When the frequency spread of the wave packet is not narrow enough, small discrepancy between these two velocities manifests, which is caused by the non-penetration effect of the evanescent modes. This work reveals that no superluminal phenomenon can happen in a dispersive anisotropic metamaterial medium made of real materials.

  19. Characteristics of laser ultrasound interaction with multi-layered dissimilar metals adhesive interface by numerical simulation

    International Nuclear Information System (INIS)

    Zhang, Kuanshuang; Zhou, Zhenggan; Zhou, Jianghua; Sun, Guangkai

    2015-01-01

    Highlights: • We investigate laser generated ultrasound in multi-layered adhesive structure. • We find the difference of waveforms with different probe points. • Probe points and frequency range influence characterization of the damage interface. • Reflection coefficients of longitudinal waves can quantify the void defect. - Abstract: The characteristics of laser-generated ultrasonic wave interaction with multi-layered dissimilar metals adhesive interface are investigated by finite element method (FEM). The physical model of laser-generated ultrasonic wave in the multi-layered dissimilar metals adhesive structure is built. The surface temperature evolution with different laser power densities is analyzed to obtain the parameters of pulsed laser with thermoelastic regime. The differences of laser ultrasonic waves with different center frequencies measured at the center of laser irradiation would verify the interfacial features of adhesive structures. The optimum frequency range and probe point would be beneficial for the detection of the small void defect. The numerical results indicate that the different frequency range and probe points would evidently influence the identification and quantitative characterization of the small void defect. The research findings would lay a foundation for testing interfacial integrity.

  20. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Miyoshi, Makoto, E-mail: miyoshi.makoto@nitech.ac.jp; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Mizuno, Masaya [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Soga, Tetsuo [Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2015-08-17

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.

  1. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    International Nuclear Information System (INIS)

    Miyoshi, Makoto; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi; Mizuno, Masaya; Soga, Tetsuo

    2015-01-01

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO 2 /Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO 2 /Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO 2 /Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm 2 /V s for electrons and 880 cm 2 /V s for holes, respectively

  2. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    Science.gov (United States)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  3. A stable organic-inorganic hybrid layer protected lithium metal anode for long-cycle lithium-oxygen batteries

    Science.gov (United States)

    Zhu, Jinhui; Yang, Jun; Zhou, Jingjing; Zhang, Tao; Li, Lei; Wang, Jiulin; Nuli, Yanna

    2017-10-01

    A stable organic-inorganic hybrid layer (OIHL) is direct fabricated on lithium metal surface by the interfacial reaction of lithium metal foil with 1-chlorodecane and oxygen/carbon dioxide mixed gas. This favorable OIHL is approximately 30 μm thick and consists of lithium alkyl carbonate and lithium chloride. The lithium-oxygen batteries with OIHL protected lithium metal anode exhibit longer cycle life (340 cycles) than those with bare lithium metal anode (50 cycles). This desirable performance can be ascribed to the robust OIHL which prevents the growth of lithium dendrites and the corrosion of lithium metal.

  4. Applicability of the Reaction Layer Principle to Nanoparticulate Metal Complexes at a Macroscopic Reactive (Bio)Interface

    NARCIS (Netherlands)

    Duval, Jérôme F.L.; Town, Raewyn M.; Leeuwen, Van Herman P.

    2017-01-01

    The reaction layer concept is commonly adopted to estimate the contribution of metal complexes to the flux of free metal ions (M) toward a macroscopic M-accumulating (bio)interface, e.g., a biosurface (microorganism) or a sensor (electrode). This concept is well-established for molecular ligands

  5. Global transport and localized layering of metallic ions in the upper atmospherer

    Directory of Open Access Journals (Sweden)

    L. N. Carter

    1999-02-01

    Full Text Available A numerical model has been developed which is capable of simulating all phases of the life cycle of metallic ions, and results are described and interpreted herein for the typical case of Fe+ ions. This cycle begins with the initial deposition of metallics through meteor ablation and sputtering, followed by conversion of neutral Fe atoms to ions through photoionization and charge exchange with ambient ions. Global transport arising from daytime electric fields and poleward/ downward di.usion along geomagnetic field lines, localized transport and layer formation through de- scending convergent nulls in the thermospheric wind field, and finally annihilation by chemical neutralization and compound formation are treated. The model thus sheds new light on the interdependencies of the physical and chemical processes a.ecting atmospheric metallics. Model output analysis confirms the dominant role of both global and local transport to the ion's life cycle, showing that upward forcing from the equatorial electric field is critical to global movement, and that diurnal and semidiurnal tidal winds are responsible for the forma- tion of dense ion layers in the 90±250 km height region. It is demonstrated that the assumed combination of sources, chemical sinks, and transport mechanisms actually produces F-region densities and E-region layer densities similar to those observed. The model also shows that zonal and meridional winds and electric fields each play distinct roles in local transport, whereas the ion distribution is relatively insensitive to reasonable variations in meteoric deposition and chemical reaction rates.Key words. Ionosphere (ion chemistry and composition; ionosphere-atmosphere interactions.

  6. Global transport and localized layering of metallic ions in the upper atmospherer

    Directory of Open Access Journals (Sweden)

    L. N. Carter

    Full Text Available A numerical model has been developed which is capable of simulating all phases of the life cycle of metallic ions, and results are described and interpreted herein for the typical case of Fe+ ions. This cycle begins with the initial deposition of metallics through meteor ablation and sputtering, followed by conversion of neutral Fe atoms to ions through photoionization and charge exchange with ambient ions. Global transport arising from daytime electric fields and poleward/ downward di.usion along geomagnetic field lines, localized transport and layer formation through de- scending convergent nulls in the thermospheric wind field, and finally annihilation by chemical neutralization and compound formation are treated. The model thus sheds new light on the interdependencies of the physical and chemical processes a.ecting atmospheric metallics. Model output analysis confirms the dominant role of both global and local transport to the ion's life cycle, showing that upward forcing from the equatorial electric field is critical to global movement, and that diurnal and semidiurnal tidal winds are responsible for the forma- tion of dense ion layers in the 90±250 km height region. It is demonstrated that the assumed combination of sources, chemical sinks, and transport mechanisms actually produces F-region densities and E-region layer densities similar to those observed. The model also shows that zonal and meridional winds and electric fields each play distinct roles in local transport, whereas the ion distribution is relatively insensitive to reasonable variations in meteoric deposition and chemical reaction rates.

    Key words. Ionosphere (ion chemistry and composition; ionosphere-atmosphere interactions.

  7. Growth and electronic structure of single-layered transition metal dichalcogenides

    DEFF Research Database (Denmark)

    Dendzik, Maciej

    2016-01-01

    only a weak interaction between SL MoS2 and graphene, which leads to a quasi-freestanding band structure, but also to the coexistence of multiple rotational domains. Measurements of SL WS2 on Ag(111), on the other hand, reveals formation of interesting in-gap states which make WS2 metallic. Low...... different from graphene’s. For example, semiconducting TMDCs undergo an indirectdirect band gap transition when thinned to a single layer (SL); this results in greatly enhanced photoluminescence, making those materials attractive for applications in optoelectronics. Furthermore, metallic TMDCs can host......-quality SL TMDCs. We demonstrate the synthesis of SL MoS2, WS2 and TaS2 on Au(111), Ag(111) and graphene on SiC. The morphology and crystal structure of the synthesized materials is characterized by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The electronic structure of SL...

  8. Irradiation of layered metallic dichalcogenides: disorder in the charge density waves

    International Nuclear Information System (INIS)

    Mutka, Hannu.

    1983-01-01

    This thesis is an experimental study on electron-irradiated metallic layer compounds (VSe 2 , NbSe 2 , TaS 2 , TaSe 2 ). The metal atoms displaced by irradiation remain in the form of stable defects up to 300 K; their concentration (10 - 5 ... 10 - 2 )is known from measurements of displacement threshold energy and magnetic susceptibility. The effect of these defects on the charge densite wave (CDW) phases and on the electronic and superconducting properties forms the major part of this study. In 1T-TaS 2 , a microstructure of CDW domains pinned to defects is observed by electron microscopy. The effects of this kind of disorder are also manifest in the thermodynamic properties of the CDW and in the electronic transport, as well as in the superconducting properties [fr

  9. Initial stresses in two-layer metal domes due to imperfections of their production and assemblage

    Directory of Open Access Journals (Sweden)

    Lebed Evgeniy Vasil’evich

    2015-04-01

    Full Text Available The process of construction of two-layer metal domes is analyzed to illustrate the causes of initial stresses in the bars of their frames. It has been noticed that it is impossible to build such structures with ideal geometric parameters because of imperfections caused by objective reasons. These imperfections cause difficulties in the process of connection of the elements in the joints. The paper demonstrates the necessity of fitting operations during assemblage that involve force fitting and yield initial stresses due to imperfections. The authors propose a special method of computer modeling of enforced elimination of possible imperfections caused by assemblage process and further confirm the method by an analysis of a concrete metal dome.

  10. Double-layered metal grating for high-performance refractive index sensing.

    Science.gov (United States)

    Li, Guozhen; Shen, Yang; Xiao, Guohui; Jin, Chongjun

    2015-04-06

    The detection of minuscule changes in the local refractive index by localized surface plasmon resonances (LSPRs), carried by metal nanostructures, has been used successfully in applications such as real-time and label-free detection of molecular binding events. However, localized plasmons demonstrate 1-2 orders of magnitude lower figure of merit (FOM) compared with their propagating counterparts. Here, we propose and experimentally demonstrate a high-performance refractive index sensor based on a structure of double-layered metal grating (DMG) with an FOM and FOM* reaching 38 and 40 respectively under normal incidence. Such a high FOM and FOM* arise from a result of a sharp fano resonance, which is caused by the coherent interference between the LSPR from the individual top gold stripes and Wood's anomaly (WA). Moreover, a small conformal decay length of ~68 nm is determined in DMG, indicating that the DMG is a promising candidate for label-free biomedical sensing.

  11. Wear resistance of WCp/Duplex Stainless Steel metal matrix composite layers prepared by laser melt injection

    NARCIS (Netherlands)

    Do Nascimento, A. M.; Ocelik, V.; Ierardi, M. C. F.; De Hosson, J. Th. M.

    2008-01-01

    Laser Melt Injection (LMI) was used to prepare metal matrix composite layers with a thickness of about 0.7 mm and approximately 10% volume fraction of WC particles in three kinds of Cast Duplex Stainless Steels (CDSSs). WC particles were injected into the molten surface layer using Nd:YAG high power

  12. Tunneling measurements in amorphous layers of superconducting transition metals: molybdenum, vanadium, and niobium

    International Nuclear Information System (INIS)

    Roll, U.

    1981-01-01

    Tunneling experiments with amorphous Molybdenum and Vanadium layers are presented, showing no significant increase of the reduced energy gap 2δ(O)/kTsub(c)(δ) compared with the BCS-value, in contrast to all previous measurement on amorphous superconducting materials of simple s-p-metals, showing on enhanced electron-phonon-interaction. This fact may lead to the conclusion that the strong electron-phonon coupling is caused by the amorphous structure of the superconductor. The present results, however, indicate that the strong electron-phonon interaction cannot be explained only ba the amorphous structure of the superconductor. In the measurements of the second derivative d 2 U/dI 2 no phonon-induced structures have been observed for amorphous molybdenum, vanadium and niobium films. Apparently the phonon density of states F(#betta#) of amorphous transition metals has no structure, thus the longitudinal and transverse phonons cannot be identified in the measured (d 2 U/dI 2 )-curves. This particular behaviour of the amorphous transition metals in contrast to the simple s-p-metals may be interpreted by the strongly localized d-electrons. (orig./GG) [de

  13. Emerging Energy Applications of Two-Dimensional Layered Transition Metal Dichalcogenides

    KAUST Repository

    Li, Henan

    2015-10-31

    Transition metal dichalcogenides (TMDCs) have attracted significant attention for their great potential in nano energy. TMDC layered materials represent a diverse and largely untapped source of 2D systems. High-quality TMDC layers with an appropriate size, variable thickness, superior electronic and optical properties can be produced by the exfoliation or vapour phase deposition method. Semiconducting TMDC monolayers have been demonstrated feasible for various energy related applications, where their electronic properties and uniquely high surface areas offer opportunities for various applications such as nano generators, green electronics, electrocatalytic hydrogen generation and energy storage. In this review, we start from the structure, properties and preparation, followed by detailed discussions on the development of TMDC-based nano energy applications. Graphical abstract The structure characterizations and preparative methods of 2D TMDCs have obtained significant progresses. Their recent advances for nano energy generation, solar harvesting, conversion and storage, and green electronics are reviewed.

  14. A Metal Bump Bonding Method Using Ag Nanoparticles as Intermediate Layer

    Science.gov (United States)

    Fu, Weixin; Nimura, Masatsugu; Kasahara, Takashi; Mimatsu, Hayata; Okada, Akiko; Shoji, Shuichi; Ishizuka, Shugo; Mizuno, Jun

    2015-11-01

    The future development of low-temperature and low-pressure bonding technology is necessary for fine-pitch bump application. We propose a bump structure using Ag nanoparticles as an intermediate layer coated on a fine-pitch Cu pillar bump. The intermediate layer is prepared using an efficient and cost-saving squeegee-coating method followed by a 100°C baking process. This bump structure can be easily flattened before the bonding process, and the low-temperature sinterability of the nanoparticles is retained. The bonding experiment was successfully performed at 250°C and 39.8 MPa and the bonding strength was comparable to that achieved via other bonding technology utilizing metal particles or porous material as bump materials.

  15. Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices

    Science.gov (United States)

    Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei

    2011-04-01

    In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation.

  16. Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

    KAUST Repository

    Cheng, Yingchun

    2014-04-28

    We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.

  17. Specific features of laser selective sintering of loose powder layers of metal-polymer type

    International Nuclear Information System (INIS)

    Tolochko, N.K.; Sobolenko, N.V.; Mozzharov, S.E.; Yadrojtsev, I.A.

    1996-01-01

    Experimental study was carried out into laser sintering of metal and polymer powder mixtures containing 75 vol.% of nickel base alloy (spherical particles 60-70 μm in diameter) and 25 vol.% of PEP-219 polymer (angular isometric particles 50-100 μm in size). The powder mixture was deposited on a stainless steel substrate and heated by continuous laser beam directed normally to powder layer. Geometrical and structural parameters of single and multilayer sintered products are shown to depend on both laser processing conditions and heat transfer. Some recommendations are given aimed at manufacturing articles of required shape, surface properties and material strength. 6 refs.; 4 figs

  18. Influence of plasma pressure gradient on melt layer macroscopic erosion of metal targets in disruption simulation experiments

    Energy Technology Data Exchange (ETDEWEB)

    Tereshin, V.I.; Garkusha, I.E. E-mail: garkusha@ipp.kharkov.ua; Bandura, A.N.; Byrka, O.V.; Chebotarev, V.V.; Makhlaj, V.A.; Solyakov, D.G.; Wuerz, H

    2003-03-01

    Melt layer erosion of metal targets under pulsed high heat loads is discussed. Tungsten, copper, aluminum, and titanium targets were exposed to perpendicular and inclined plasma impact in the quasi-steady-state plasma accelerator QSPA Kh-50. Melt layer motion results in erosion crater formation with rather large mountains of the resolidified material at the crater edge. It is shown that macroscopic motion of the melt layer and surface cracking are the main factors responsible for tungsten erosion.

  19. Influence of plasma pressure gradient on melt layer macroscopic erosion of metal targets in disruption simulation experiments

    International Nuclear Information System (INIS)

    Tereshin, V.I.; Garkusha, I.E.; Bandura, A.N.; Byrka, O.V.; Chebotarev, V.V.; Makhlaj, V.A.; Solyakov, D.G.; Wuerz, H.

    2003-01-01

    Melt layer erosion of metal targets under pulsed high heat loads is discussed. Tungsten, copper, aluminum, and titanium targets were exposed to perpendicular and inclined plasma impact in the quasi-steady-state plasma accelerator QSPA Kh-50. Melt layer motion results in erosion crater formation with rather large mountains of the resolidified material at the crater edge. It is shown that macroscopic motion of the melt layer and surface cracking are the main factors responsible for tungsten erosion

  20. Layered Metal Nanoparticle Structures on Electrodes for Sensing, Switchable Controlled Uptake/Release, and Photo-electrochemical Applications.

    Science.gov (United States)

    Tel-Vered, Ran; Kahn, Jason S; Willner, Itamar

    2016-01-06

    Layered metal nanoparticle (NP) assemblies provide highly porous and conductive composites of unique electrical and optical (plasmonic) properties. Two methods to construct layered metal NP matrices are described, and these include the layer-by-layer deposition of NPs, or the electropolymerization of monolayer-functionalized NPs, specifically thioaniline-modified metal NPs. The layered NP composites are used as sensing matrices through the use of electrochemistry or surface plasmon resonance (SPR) as transduction signals. The crosslinking of the metal NP composites with molecular receptors, or the imprinting of molecular recognition sites into the electropolymerized NP matrices lead to selective and chiroselective sensing interfaces. Furthermore, the electrosynthesis of redox-active, imprinted, bis-aniline bridged Au NP composites yields electrochemically triggered "sponges" for the switchable uptake and release of electron-acceptor substrates, and results in conductive surfaces of electrochemically controlled wettability. Also, photosensitizer-relay-crosslinked Au NP composites, or electrochemically polymerized layered semiconductor quantum dot/metal NP matrices on electrodes, are demonstrated as functional nanostructures for photoelectrochemical applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

    Science.gov (United States)

    Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

  2. Development of membrane filters with nanostructured porous layer by coating of metal nanoparticles sintered onto a micro-filter

    International Nuclear Information System (INIS)

    Park, Seok Joo; Park, Young Ok; Lee, Dong Geun; Ryu, Jeong In

    2008-01-01

    The membrane filter adhered with nanostructured porous layer was made by heat treatment after deposition of nanoparticle-agglomerates sintered in aerosol phase onto a conventional micron-fibrous metal filter as a substrate filter. The Sintered-Nanoparticle-Agglomerates-coated NanoStructured porous layer Membrane Filter (SNA-NSMF), whose the filtration performance was improved compared with the conventional metal membrane filters, was developed by adhesion of nanoparticle-agglomerates of dendrite structure sintered onto the micron-fibrous metal filter. The size of nanoparticle-agglomerates of dendrite structure decreased with increasing the sintering temperature because nanoparticle-agglomerates shrank. When shrinking nanoparticle-agglomerates were deposited and treated with heat onto the conventional micron-fibrous metal filter, pore size of nanostructured porous layer decreased. Therefore, pressure drops of SNA-NSMFs increased from 0.3 to 0.516 KPa and filtration efficiencies remarkably increased from 95.612 to 99.9993%

  3. A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric

    Science.gov (United States)

    Soni, Deepak; Sharma, Dheeraj; Aslam, Mohd.; Yadav, Shivendra

    2018-04-01

    This article presents a new device configuration to enhance current drivability and suppress negative conduction (ambipolar conduction) with improved RF characteristics of physically doped TFET. Here, we used a new approach to get excellent electrical characteristics of hetero-dielectric short gate source electrode TFET (HD-SG SE-TFET) by depositing a metal electrode of 5.93 eV work function over the heavily doped source (P+) region. Deposition of metal electrode induces the plasma (thin layer) of holes under the Si/HfO2 interface due to work function difference of metal and semiconductor. Plasma layer of holes is advantageous to increase abruptness as well as decrease the tunneling barrier at source/channel junction for attaining higher tunneling rate of charge carriers (i.e., electrons), which turns into 86.66 times higher ON-state current compared with the conventional physically doped TFET (C-TFET). Along with metal electrode deposition, gate electrode is under-lapped for inducing asymmetrical concentration of charge carriers in the channel region, which is helpful for widening the tunneling barrier width at the drain/channel interface. Consequently, HD-SG SE-TFET shows suppression of ambipolar behavior with reduction in gate-to-drain capacitance which is beneficial for improvement in RF performance. Furthermore, the effectiveness of hetero-gate dielectric concept has been used for improving the RF performance. Furthermore, reliability of C-TFET and proposed structures has been confirmed in term of linearity.

  4. Highly Stable Operation of Lithium Metal Batteries Enabled by the Formation of a Transient High Concentration Electrolyte Layer

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Jianming; Yan, Pengfei; Mei, Donghai; Engelhard, Mark H.; Cartmell, Samuel S.; Polzin, Bryant; Wang, Chong M.; Zhang, Jiguang; Xu, Wu

    2016-02-08

    Lithium (Li) metal has been extensively investigated as an anode for rechargeable battery applications due to its ultrahigh specific capacity and the lowest redox potential. However, significant challenges including dendrite growth and low Coulombic efficiency are still hindering the practical applications of rechargeable Li metal batteries. Here, we demonstrate that long-term cycling of Li metal batteries can be realized by the formation of a transient high concentration electrolyte layer near the surface of Li metal anode during high rate discharge process. The highly concentrated Li+ ions in this transient layer will immediately solvate with the available solvent molecules and facilitate the formation of a stable and flexible SEI layer composed of a poly(ethylene carbonate) framework integrated with other organic/inorganic lithium salts. This SEI layer largely suppresses the corrosion of Li metal anode by free organic solvents and enables the long-term operation of Li metal batteries. The fundamental findings in this work provide a new direction for the development and operation of Li metal batteries that could be operated at high current densities for a wide range of applications.

  5. 100-nm gate lithography for double-gate transistors

    Science.gov (United States)

    Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

    2001-09-01

    The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

  6. Optimization of Phase Change Memory with Thin Metal Inserted Layer on Material Properties

    Science.gov (United States)

    Harnsoongnoen, Sanchai; Sa-Ngiamsak, Chiranut; Siritaratiwat, Apirat

    This works reports, for the first time, the thorough study and optimisation of Phase Change Memory (PCM) structure with thin metal inserted chalcogenide via electrical resistivity (ρ) using finite element modeling. PCM is one of the best candidates for next generation non-volatile memory. It has received much attention recently due to its fast write speed, non-destructive readout, superb scalability, and great compatibility with current silicon-based mass fabrication. The setback of PCM is a high reset current typically higher than 1mA based on 180nm lithography. To reduce the reset current and to solve the over-programming failure, PCM with thin metal inserted chalcogenide (bottom chalcogenide/metal inserted/top chalcogenide) structure has been proposed. Nevertheless, reports on optimisation of the electrical resistivity using the finite element method for this new PCM structure have never been published. This work aims to minimize the reset current of this PCM structure by optimizing the level of the electrical resistivity of the PCM profile using the finite element approach. This work clearly shows that PCM characteristics are strongly affected by the electrical resistivity. The 2-D simulation results reveal clearly that the best thermal transfer of and self-joule-heating at the bottom chalcogenide layer can be achieved under conditions; ρ_bottom chalcogenide > ρ_metal inserted > ρ_top chalcogenide More specifically, the optimized electrical resistivity of PCMTMI is attained with ρ_top chalcogenide: ρ_metal inserted: ρ_bottom chalcogenide ratio of 1:6:16 when ρ_top chalcogenide is 10-3 Ωm. In conclusion, high energy efficiency can be obtained with the reset current as low as 0.3mA and with high speed operation of less than 30ns.

  7. Metallization and biopatterning on ultra-flexible substrates via dextran sacrificial layers.

    Directory of Open Access Journals (Sweden)

    Peter Tseng

    Full Text Available Micro-patterning tools adopted from the semiconductor industry have mostly been optimized to pattern features onto rigid silicon and glass substrates, however, recently the need to pattern on soft substrates has been identified in simulating cellular environments or developing flexible biosensors. We present a simple method of introducing a variety of patterned materials and structures into ultra-flexible polydimethylsiloxane (PDMS layers (elastic moduli down to 3 kPa utilizing water-soluble dextran sacrificial thin films. Dextran films provided a stable template for photolithography, metal deposition, particle adsorption, and protein stamping. These materials and structures (including dextran itself were then readily transferrable to an elastomer surface following PDMS (10 to 70∶1 base to crosslinker ratios curing over the patterned dextran layer and after sacrificial etch of the dextran in water. We demonstrate that this simple and straightforward approach can controllably manipulate surface wetting and protein adsorption characteristics of PDMS, covalently link protein patterns for stable cell patterning, generate composite structures of epoxy or particles for study of cell mechanical response, and stably integrate certain metals with use of vinyl molecular adhesives. This method is compatible over the complete moduli range of PDMS, and potentially generalizable over a host of additional micro- and nano-structures and materials.

  8. Polycrystalline GaN layer recrystallization by metal-induced method during the baking process

    Energy Technology Data Exchange (ETDEWEB)

    Jagoda, A.; Stanczyk, B.; Dobrzanski, L.; Diduszko, R. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw 118 (Poland)

    2007-04-15

    Radio frequency reactive sputtering was used to produce gallium nitride films on thermally oxidized silicon substrates at room temperature. Metallic Ga (purity 6N) was used as the target, N{sub 2} and Ar were utilized as sputtering gases. Amorphous GaN was obtained by metal-induced crystallization with a Ni assistance. The nickel particles were scattered onto the surface by rf sputtering and their density was 2 x 10{sup 14} atoms/cm{sup 2} or 4 x 10{sup 14} atoms/cm{sup 2}, which corresponds to 0.02 nm and 0.04 nm thick layer. These values are less than a monolayer thickness, so they are not continuous. Samples were annealed at 700 C for 3 h and at 900 C for 5 min in a RTP furnace. The 2.5 {mu}m GaN layers grown on the Ni-coated SiO{sub 2} surface recrystallized during annealing forming crystals of (002) orientation. The catalytic regrowth mechanism of GaN is discussed on the basis of experimental results. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Metallization and Biopatterning on Ultra-Flexible Substrates via Dextran Sacrificial Layers

    Science.gov (United States)

    Tseng, Peter; Pushkarsky, Ivan; Di Carlo, Dino

    2014-01-01

    Micro-patterning tools adopted from the semiconductor industry have mostly been optimized to pattern features onto rigid silicon and glass substrates, however, recently the need to pattern on soft substrates has been identified in simulating cellular environments or developing flexible biosensors. We present a simple method of introducing a variety of patterned materials and structures into ultra-flexible polydimethylsiloxane (PDMS) layers (elastic moduli down to 3 kPa) utilizing water-soluble dextran sacrificial thin films. Dextran films provided a stable template for photolithography, metal deposition, particle adsorption, and protein stamping. These materials and structures (including dextran itself) were then readily transferrable to an elastomer surface following PDMS (10 to 70∶1 base to crosslinker ratios) curing over the patterned dextran layer and after sacrificial etch of the dextran in water. We demonstrate that this simple and straightforward approach can controllably manipulate surface wetting and protein adsorption characteristics of PDMS, covalently link protein patterns for stable cell patterning, generate composite structures of epoxy or particles for study of cell mechanical response, and stably integrate certain metals with use of vinyl molecular adhesives. This method is compatible over the complete moduli range of PDMS, and potentially generalizable over a host of additional micro- and nano-structures and materials. PMID:25153326

  10. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

    2013-01-01

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

  11. Amplifying genetic logic gates.

    Science.gov (United States)

    Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

    2013-05-03

    Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

  12. Epitaxially influenced boundary layer model for size effect in thin metallic films

    International Nuclear Information System (INIS)

    Bazant, Zdenek P.; Guo Zaoyang; Espinosa, Horacio D.; Zhu Yong; Peng Bei

    2005-01-01

    It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films

  13. Epitaxially influenced boundary layer model for size effect in thin metallic films

    Science.gov (United States)

    Bažant, Zdeněk P.; Guo, Zaoyang; Espinosa, Horacio D.; Zhu, Yong; Peng, Bei

    2005-04-01

    It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films.

  14. Positron annihilation lifetime spectroscopy (PALS) application in metal barrier layer integrity for porous low- k materials

    CERN Document Server

    Simon, Lin; Gidley, D W; Wetzel, J T; Monnig, K A; Ryan, E T; Simon, Jang; Douglas, Yu; Liang, M S; En, W G; Jones, E C; Sturm, J C; Chan, M J; Tiwari, S C; Hirose, M

    2002-01-01

    Positron Annihilation Lifetime Spectroscopy (PALS) is a useful tool to pre-screen metal barrier integrity for Si-based porous low-k dielectrics. Pore size of low-k, thickness of metal barrier Ta, positronium (Ps) leakage from PALS, trench sidewall morphology, electrical test from one level metal (1LM) pattern wafer and Cu diffusion analysis were all correlated. Macro-porous low-k (pore size >=200 AA) and large scale meso-porous low-k (>50~200 AA) encounter both Ps leakage and Cu diffusion into low-k dielectric in the 0.25 mu mL/0.3 mu mS structures when using SEMATECH in-house PVD Ta 250 AA as barrier layer. For small scale meso-porous (>20~50 AA) and micro- porous (<=20 AA) low-k, no Ps leakage and no Cu diffusion into low-k were observed even with PVD Ta 50 AA, which is proved also owing to sidewall densification to seal all sidewall pores due to plasma etch and ash. For future technology, smaller pore size of porous Si-based low-k (=<50 AA) will be preferential for dense low-k like trench sidewall to...

  15. Effect of process parameters on hardness, temperature profile and solidification of different layers processed by direct metal laser sintering (DMLS)

    International Nuclear Information System (INIS)

    Ahmed, Sazzad Hossain; Mian, Ahsan; Srinivasan, Raghavan

    2016-01-01

    In DMLS process objects are fabricated layer by layer from powdered material by melting induced by a controlled laser beam. Metallic powder melts and solidifies to form a single layer. Solidification map during layer formation is an important route to characterize micro-structure and grain morphology of sintered layer. Generally, solidification leads to columnar, equiaxed or mixture of these two types grain morphology depending on solidification rate and thermal gradient. Eutectic or dendritic structure can be formed in fully equiaxed zone. This dendritic growth has a large effect on material properties. Smaller dendrites generally increase ductility of the layer. Thus, materials can be designed by creating desired grain morphology in certain regions using DMLS process. To accomplish this, hardness, temperature distribution, thermal gradient and solidification cooling rate in processed layers will be studied under change of process variables by using finite element analysis, with specific application to Ti-6Al-4V.

  16. Effect of process parameters on hardness, temperature profile and solidification of different layers processed by direct metal laser sintering (DMLS)

    Science.gov (United States)

    Ahmed, Sazzad Hossain; Mian, Ahsan; Srinivasan, Raghavan

    2016-07-01

    In DMLS process objects are fabricated layer by layer from powdered material by melting induced by a controlled laser beam. Metallic powder melts and solidifies to form a single layer. Solidification map during layer formation is an important route to characterize micro-structure and grain morphology of sintered layer. Generally, solidification leads to columnar, equiaxed or mixture of these two types grain morphology depending on solidification rate and thermal gradient. Eutectic or dendritic structure can be formed in fully equiaxed zone. This dendritic growth has a large effect on material properties. Smaller dendrites generally increase ductility of the layer. Thus, materials can be designed by creating desired grain morphology in certain regions using DMLS process. To accomplish this, hardness, temperature distribution, thermal gradient and solidification cooling rate in processed layers will be studied under change of process variables by using finite element analysis, with specific application to Ti-6Al-4V.

  17. Effect of process parameters on hardness, temperature profile and solidification of different layers processed by direct metal laser sintering (DMLS)

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Sazzad Hossain; Mian, Ahsan, E-mail: ahsan.mian@wright.edu; Srinivasan, Raghavan [Department of Mechanical and Materials Engineering, Wright State University, Dayton, Ohio 45435 (United States)

    2016-07-12

    In DMLS process objects are fabricated layer by layer from powdered material by melting induced by a controlled laser beam. Metallic powder melts and solidifies to form a single layer. Solidification map during layer formation is an important route to characterize micro-structure and grain morphology of sintered layer. Generally, solidification leads to columnar, equiaxed or mixture of these two types grain morphology depending on solidification rate and thermal gradient. Eutectic or dendritic structure can be formed in fully equiaxed zone. This dendritic growth has a large effect on material properties. Smaller dendrites generally increase ductility of the layer. Thus, materials can be designed by creating desired grain morphology in certain regions using DMLS process. To accomplish this, hardness, temperature distribution, thermal gradient and solidification cooling rate in processed layers will be studied under change of process variables by using finite element analysis, with specific application to Ti-6Al-4V.

  18. MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers

    Science.gov (United States)

    Grendysa, J.; Tomaka, G.; Sliz, P.; Becker, C. R.; Trzyna, M.; Wojnarowska-Nowak, R.; Bobko, E.; Sheregii, E. M.

    2017-12-01

    Particularities of Molecular Beam Epitaxial (MBE) technology for the growth of Topological Insulators (TI) based on the semi-metal Hg1-xCdx Te are presented. A series of strained layers grown on GaAs substrates with a composition close to the 3D Dirac point were studied. The composition of the layers was verified by means of the position of the E1 maximum in optical reflectivity in the visible region. The surface morphology was determined via atomic force and electron microscopy. Magneto-transport measurements show quantized Hall resistance curves and Shubnikov de Hass oscillations (up to 50 K). It has been demonstrated that a well-developed MBE technology enables one to grow strained Hg1-xCdx Te layers on GaAs/CdTe substrates with a well-defined composition near the 3D Dirac point and consequently allows one to produce a 3D topological Dirac semimetal - 3D analogy of graphene - for future applications.

  19. Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

    Energy Technology Data Exchange (ETDEWEB)

    Guzman, L., E-mail: luisg47@gmail.com [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy); Vettoruzzo, F. [Ronda High Tech, via Vegri 83, 36010 Zane’, Vicenza (Italy); Laidani, N. [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy)

    2016-02-29

    optically tested. • An ultrathin TiN (20 nm) top layer is able to confer intense blue color to metals.

  20. Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

    Science.gov (United States)

    Kumar, Sona P.; Agrawal, Anju; Chaujar, Rishu; Gupta, Mridula; Gupta, R. S.

    2008-07-01

    A two-dimensional (2-D) analytical model for a Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs). The model accurately predicts the channel potential, electric field variation along the channel, and sub-threshold drain current, taking into account the effect of lengths of the two gate metals, their work functions, barrier layer thicknesses, and applied drain biases. It is seen that the SCEs and hot carrier effects in DMG AlGaN/GaN HEMT are suppressed due to the work function difference of the two metal gates, thereby screening the drain potential variations by the gate near the drain. Besides, a more uniform electric field along the channel leads to improved carrier transport efficiency. The accuracy of the results obtained from our analytical model has been verified using ATLAS device simulations.

  1. Proximity Effect in Gate Fabrication Using Photolithography Technique

    Directory of Open Access Journals (Sweden)

    Joanna Prazmowska

    2017-01-01

    Full Text Available In the paper the technological factors influencing test structure gate length were described. The influence of test structure gate placement (Schottky metallization between ohmic contacts, on mesa and on GaN surface was analyzed and discussed. Moreover, various distances between ohmic contacts paths were tested. Except for experimental investigations, simulations using finite elements method in COMSOL were performed for the same structure. The modelling results revealed crucial impact of a gap beyond the mask on the electric field distribution in photoresist layer. The smallest value of relative error of test finger lengths was observed for finger parts placed between ohmic paths on mesas. It was explained by thicker lift-off double layer between ohmic paths and the smallest Y-gap compared to test fingers placed on mesa and outside of it. Simulation did not bring an explanation of larger values of relative error for smaller distance between ohmic paths.

  2. Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

  3. Lithium ion intercalation in thin crystals of hexagonal TaSe2 gated by a polymer electrolyte

    Science.gov (United States)

    Wu, Yueshen; Lian, Hailong; He, Jiaming; Liu, Jinyu; Wang, Shun; Xing, Hui; Mao, Zhiqiang; Liu, Ying

    2018-01-01

    Ionic liquid gating has been used to modify the properties of layered transition metal dichalcogenides (TMDCs), including two-dimensional (2D) crystals of TMDCs used extensively recently in the device work, which has led to observations of properties not seen in the bulk. The main effect comes from the electrostatic gating due to the strong electric field at the interface. In addition, ionic liquid gating also leads to ion intercalation when the ion size of the gate electrolyte is small compared to the interlayer spacing of TMDCs. However, the microscopic processes of ion intercalation have rarely been explored in layered TMDCs. Here, we employed a technique combining photolithography device fabrication and electrical transport measurements on the thin crystals of hexagonal TaSe2 using multiple channel devices gated by a polymer electrolyte LiClO4/Polyethylene oxide (PEO). The gate voltage and time dependent source-drain resistances of these thin crystals were used to obtain information on the intercalation process, the effect of ion intercalation, and the correlation between the ion occupation of allowed interstitial sites and the device characteristics. We found a gate voltage controlled modulation of the charge density waves and a scattering rate of charge carriers. Our work suggests that ion intercalation can be a useful tool for layered materials engineering and 2D crystal device design.

  4. Resistivity scaling due to electron surface scattering in thin metal layers

    Science.gov (United States)

    Zhou, Tianji; Gall, Daniel

    2018-04-01

    The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of thin metal layers is investigated using nonequilibrium Green's function density functional transport simulations. Cu(001) thin films with thickness d =1 -2 nm are used as a model system, employing a random one-monolayer-high surface roughness and frozen phonons to cause surface and bulk scattering, respectively. The zero-temperature resistivity increases from 9.7 ±1.0 μ Ω cm at d =1.99 nm to 18.7 ±2.6 μ Ω cm at d =0.9 0 nm, contradicting the asymptotic T =0 prediction from the classical Fuchs-Sondheimer model. At T =9 00 K, ρ =5.8 ±0.1 μ Ω cm for bulk Cu and ρ =13.4 ±1.1 and 22.5 ±2.4 μ Ω cm for layers with d =1.99 and 0.90 nm, respectively, indicating an approximately additive phonon contribution which, however, is smaller than for bulk Cu or atomically smooth layers. The overall data indicate that the resistivity contribution from surface scattering is temperature-independent and proportional to 1 /d , suggesting that it can be described using a surface-scattering mean-free path λs for 2D transport which is channel-independent and proportional to d . Data fitting indicates λs=4 ×d for the particular simulated Cu(001) surfaces with a one-monolayer-high surface roughness. The 1 /d dependence deviates considerably from previous 1 /d2 predictions from quantum models, indicating that the small-roughness approximation in these models is not applicable to very thin (<2 nm) layers, where the surface roughness is a considerable fraction of d .

  5. Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

    Science.gov (United States)

    Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

    2018-05-01

    We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

  6. Semiconductor growth on an oxide using a metallic surfactant and interface studies for potential gate stacks from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Reyes Huamantinco, Andrei

    2008-05-09

    In this work the epitaxial growth of germanium on SrHfO{sub 3}(001), and the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) and SrTiO{sub 3}/GaAs(001) interfaces were studied theoretically using the Projector-Augmented Wave (PAW) method. The PAW method is based on Density Functional Theory and it is implemented in the Car-Parrinello Ab-Initio Molecular Dynamics. The goal of the germanium growth on SrHfO{sub 3}(001) is to form a germanium film with low density of defects and smooth morphology, to be used as channel in a transistor. The feasibility of using a third material to achieve germanium layer-by-layer growth was investigated. The formation of an ordered strontium film on a SrO-terminated oxide substrate, to be used as template for germanium overgrowth, was studied. Deposition of germanium on the strontium 1ML template results in wetting and thus a change of the growth mode to layer-by-layer. The germanium surface is then passivated and a germanium compound is initially formed with strontium at the surface and interface. The interfacial structure and valence band offsets of the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) crystalline system were studied. The SrTiO{sub 3}/GaAs(001) crystalline interfaces with unpinned Fermi level were investigated. (orig.)

  7. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    Science.gov (United States)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-06-01

    The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

  8. General access to metal oxide (Metal = Mn, Co, Ni) double-layer nanospheres for application in lithium ion batteries and supercapacitors

    International Nuclear Information System (INIS)

    Xia, Yuan; Wang, Gang; Zhang, Xing; Wang, Beibei; Wang, Hui

    2016-01-01

    Highlights: • A series of metal oxide double layer nanospheres were prepared. • The obtained materials show excellent performances in lithium ion batteries and supercapacitors. • The unique structure of double layers is beneficial for superior electrochemical performances. - Abstract: In this work, a series of metal oxide double-layer nanospheres (DLNs), such as Mn 2 O 3 , Co 3 O 4 , NiO, NiCo 2 O 4 , and MnCo 2 O 4 have been successfully synthesized through a general template method. The layers of nanospheres were assembled by different nanostructure units and the removing of the SiO 2 template formed a void of several ten nanometers between the double layers, resulting large specific surface areas for them. The energy storage performances of the as-prepared double-layer nanospheres were further investigated in lithium ion battery and supercapacitor systems. Based on their unique nanostructures, the double-layer nanospheres exhibit excellent electrochemical performance with long cycle stability and high specific capacities or capacitances. The best of these, DLNs-NiCo 2 O 4 can deliver a reversible capacity of 1107 mAh g −1 at 0.25C after 200 cycles in lithium ion battery system, and shows a capacitance of 1088 F g −1 with capacitance loss of less than 3% at 5 A g −1 after 5000 cycles in supercapacitors.

  9. Photoluminescence emission from Alq3 organic layer in metal–Alq3–metal plasmonic structure

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran; Liao, Chung-Chi [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Fan, Wan-Ting [Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan (China); Wu, Jin-Han; Chen, Cheng-Chang; Lin, Yi-Ping; Li, Jung-Yu; Chen, Shih-Pu [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute (ITRI), 195, Sec. 4, Chung-Hsin Road, Chutung 310, Taiwan (China); Ke, Wen-Cheng [Department of Mechanical Engineering, Yuan Ze University, Tao-Yuan 320, Taiwan (China); Chen, Nai-Chuan, E-mail: ncchen001@mail.cgu.edu.tw [Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan (China)

    2014-06-01

    The emission properties of an organic layer embedded in a metal–organic–metal (MOM) structure were investigated. A partially radiative odd-SPW as well as a non-radiative even-SPW modes are supported by hybridization of the SPW modes on the opposite organic/metal interface in the structure. Because of the competition by this radiative SPW, the population of excitons that recombine to form non-radiative SPW should be reduced. This may account for why the photoluminescence intensity of the MOM sample is higher than that of an organic–metal sample even though the MOM sample has an additional metal layer that should intuitively act as a filter.

  10. Characterization of metal-supported axial injection plasma sprayed solid oxide fuel cells with aqueous suspension plasma sprayed electrolyte layers

    Science.gov (United States)

    Waldbillig, D.; Kesler, O.

    A method for manufacturing metal-supported SOFCs with atmospheric plasma spraying (APS) is presented, making use of aqueous suspension feedstock for the electrolyte layer and dry powder feedstock for the anode and cathode layers. The cathode layer was deposited first directly onto a metal support, in order to minimize contact resistance, and to allow the introduction of added porosity. The electrolyte layers produced by suspension plasma spraying (SPS) were characterized in terms of thickness, permeability, and microstructure, and the impact of substrate morphology on electrolyte properties was investigated. Fuel cells produced by APS were electrochemically tested at temperatures ranging from 650 to 750 °C. The substrate morphology had little effect on open circuit voltage, but substrates with finer porosity resulted in lower kinetic losses in the fuel cell polarization.

  11. Characterization of metal-supported axial injection plasma sprayed solid oxide fuel cells with aqueous suspension plasma sprayed electrolyte layers

    Energy Technology Data Exchange (ETDEWEB)

    Waldbillig, D. [University of British Columbia, Department of Materials Engineering, 309-6350 Stores Road, Vancouver, BC (Canada); Kesler, O. [University of Toronto, Department of Mechanical and Industrial Engineering, 5 King' s College Road, Toronto, Ontario (Canada)

    2009-06-15

    A method for manufacturing metal-supported SOFCs with atmospheric plasma spraying (APS) is presented, making use of aqueous suspension feedstock for the electrolyte layer and dry powder feedstock for the anode and cathode layers. The cathode layer was deposited first directly onto a metal support, in order to minimize contact resistance, and to allow the introduction of added porosity. The electrolyte layers produced by suspension plasma spraying (SPS) were characterized in terms of thickness, permeability, and microstructure, and the impact of substrate morphology on electrolyte properties was investigated. Fuel cells produced by APS were electrochemically tested at temperatures ranging from 650 to 750 C. The substrate morphology had little effect on open circuit voltage, but substrates with finer porosity resulted in lower kinetic losses in the fuel cell polarization. (author)

  12. Chemically-modified graphene sheets as an active layer for eco-friendly metal electroplating on plastic substrates

    International Nuclear Information System (INIS)

    Oh, Joon-Suk; Hwang, Taeseon; Nam, Gi-Yong; Hong, Jung-Pyo; Bae, Ah-Hyun; Son, Sang-Ik; Lee, Geun-Ho; Sung, Hak kyung; Choi, Hyouk Ryeol; Koo, Ja Choon; Nam, Jae-Do

    2012-01-01

    Eco-friendly nickel (Ni) electroplating was carried out on a plastic substrate using chemically modified graphene sheets as an active and conductive layer to initiate electroplating without using conventional pre-treatment or electroless metal-seeding processes. A graphene oxide (GO) solution was self-assembled on a polyethylene terephthalate (PET) film followed by evaporation to give GO layers (thickness around 6.5 μm) on PET (GO/PET) film. Then, the GO/PET film was chemically and thermally reduced to convert the GO layers to reduced graphene oxide (RGO) layers on the PET substrate. The RGO-coated PET (RGO/PET) film showed the sheet resistance of 100 Ω per square. On RGO/PET film, Ni electroplating was conducted under the constant-current condition and the entire surface of the PET film was completely metalized with Ni without any voids.

  13. Photon-gated spin transistor

    OpenAIRE

    Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

    2017-01-01

    Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

  14. Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact

    Directory of Open Access Journals (Sweden)

    Smyntyna V. A.

    2011-11-01

    Full Text Available Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with increasing thickness of the layer of polycrystalline p-Si current transport mechanism changes from a double injection into the drift-diffusion. This change is due to an increase in the drift current component in the space charge zone of "metal — p-Si" contact, which arises as a result of increased surface density of scattering barriers, which are localized at the boundaries of neighboring silicon polycrystals.

  15. Computer-aided study of key factors determining high mechanical properties of nanostructured surface layers in metal-ceramic composites

    Science.gov (United States)

    Konovalenko, Igor S.; Shilko, Evgeny V.; Ovcharenko, Vladimir E.; Psakhie, Sergey G.

    2017-12-01

    The paper presents the movable cellular automaton method. It is based on numerical models of surface layers of the metal-ceramic composite NiCr-TiC modified under electron beam irradiation in inert gas plasmas. The models take into account different geometric, concentration and mechanical parameters of ceramic and metallic components. The authors study the contributions of key structural factors in mechanical properties of surface layers and determine the ranges of their variations by providing the optimum balance of strength, strain hardening and fracture toughness.

  16. Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

    International Nuclear Information System (INIS)

    Takano, H.; Hosogi, K.; Kato, T.

    1995-01-01

    A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs

  17. Defect physics vis-à-vis electrochemical performance in layered mixed-metal oxide cathode materials

    Science.gov (United States)

    Hoang, Khang; Johannes, Michelle

    Layered mixed-metal oxides with different compositions of (Ni,Co,Mn) [NCM] or (Ni,Co,Al) [NCA] have been used in commercial lithium-ion batteries. Yet their defect physics and chemistry is still not well understood, despite having important implications for the electrochemical performance. In this presentation, we report a hybrid density functional study of intrinsic point defects in the compositions LiNi1/3Co1/3Mn1/3O2 (NCM1/3) and LiNi1/3Co1/3Al1/3O2 (NCA1/3) which can also be regarded as model compounds for NCM and NCA. We will discuss defect landscapes in NCM1/3 and NCA1/3 under relevant synthesis conditions with a focus on the formation of metal antisite defects and its implications on the electrochemical properties and ultimately the design of NCM and NCA cathode materials.

  18. A Flexible Solid Electrolyte Interphase Layer for Long-Life Lithium Metal Anodes.

    Science.gov (United States)

    Li, Nian-Wu; Shi, Yang; Yin, Ya-Xia; Zeng, Xian-Xiang; Li, Jin-Yi; Li, Cong-Ju; Wan, Li-Jun; Wen, Rui; Guo, Yu-Guo

    2018-02-05

    Lithium (Li) metal is a promising anode material for high-energy density batteries. However, the unstable and static solid electrolyte interphase (SEI) can be destroyed by the dynamic Li plating/stripping behavior on the Li anode surface, leading to side reactions and Li dendrites growth. Herein, we design a smart Li polyacrylic acid (LiPAA) SEI layer high elasticity to address the dynamic Li plating/stripping processes by self-adapting interface regulation, which is demonstrated by in situ AFM. With the high binding ability and excellent stability of the LiPAA polymer, the smart SEI can significantly reduce the side reactions and improve battery safety markedly. Stable cycling of 700 h is achieved in the LiPAA-Li/LiPAA-Li symmetrical cell. The innovative strategy of self-adapting SEI design is broadly applicable, providing opportunities for use in Li metal anodes. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Metallic behavior and enhanced adsorption energy of graphene on BN layer induced by Cu(111) substrate

    International Nuclear Information System (INIS)

    Hashmi, Arqum; Hong, Jisang

    2014-01-01

    We have investigated the adsorption properties and the electronic structure of graphene/BN and graphene/BN/Cu(111) systems by using van der Waals density functional theory. The ground-state adsorption site of graphene on BN/Cu(111) is found to be the same as that of graphene/BN. The Cu(111) substrate did not induce a significant change in the geometrical feature of graphene/BN. However, the adsorption energy of graphene on BN/Cu(111) is observed to be enhanced due to the Cu(111) substrate. In addition, we have found that the graphene layer displays a weak metallic character in graphene/BN/Cu(111) whereas an energy band gap is observed in the graphene in the graphene/BN bilayer system. Therefore, we have found that the metallic Cu(111) substrate affects the electronic structure and adsorption properties of graphene on BN/Cu(111), although it has no significant effect on the geometrical features.

  20. Inert Layered Silicate Improves the Electrochemical Responses of a Metal Complex Polymer.

    Science.gov (United States)

    Eguchi, Miharu; Momotake, Masako; Inoue, Fumie; Oshima, Takayoshi; Maeda, Kazuhiko; Higuchi, Masayoshi

    2017-10-11

    A chemically inert, insulating layered silicate (saponite; SP) and an iron(II)-based metallo-supramolecular complex polymer (polyFe) were combined via electrostatic attraction to improve the electrochromic properties of polyFe. Structural characterization indicated that polyFe was intercalated into the SP nanosheets. Interestingly, the redox potential of polyFe was lowered by combining it with SP, and the current was measurable despite the insulating nature of SP. X-ray photoelectron spectroscopy showed that the decrease in the redox potential observed in the SP-polyFe hybrid was caused by the electrostatic neutralization of the Fe cation in polyFe by the negative charge on SP. Electrochemical analyses indicated that electron transfer occurred through electron hopping across the SP-polyFe hybrid. Control experiments using a metal complex composed of Fe and two 2,2':6',2''-terpyridine ligands (terpyFe) showed that SP contributes to the effective electron hopping. This modulation of the electrochemical properties by the layered silicates could be applied to other electrochemical systems, including hybrids of the redox-active ionic species and ion-exchangeable adsorbents.

  1. Sputter fabricated Nb-oxide-Nb josephson junctions incorporating post-oxidation noble metal layers

    International Nuclear Information System (INIS)

    Bain, R.J.P.; Donaldson, G.B.

    1985-01-01

    We present an extension, involving other metals, of the work of Hawkins and Clarke, who found that a thin layer of copper prevented the formation of the superconductive shorts which are an inevitable consequence of sputtering niobium counter-electrodes directly on top of niobium oxide. We find gold to be the most satisfactory, and that 0.3 nm is sufficient to guarantee short-free junctions of excellent electrical and mechanical stability, though high excess conductance means they are best suited to shunted-junction applications, as in SQUIDs. We present results for critical current dependence on oxide thickness and on gold thickness. Our data shows that thermal oxide growth is described by the Cabrera-Mott mechanism. We show that the protective effect of the gold layer can be understood in terms of the electro-chemistry of the Nb-oxide-Au structure, and that the reduced quasi-particle resistance of the junctions relative to goldfree junctions with evaporated counterelectrodes can be explained in terms of barrier shape modification, and not by proximity effect mechanisms. The performance of a DC SQUID based on these junctions is described

  2. Effect of surfactant on electrodeposited Ni-P layer as an under bump metallization

    International Nuclear Information System (INIS)

    Lin, Yung-Chi; Duh, Jenq-Gong

    2007-01-01

    In the microelectronic industry, the nickel plating has been used as the under bump metallization (UBM). The electroplated process was demonstrated to be a favorable alternative approach to produce the Ni-P layer as UBM. In this study, the role of sodium dodecylsulfate (SDS) addition in electrodeposition was investigated. The variations on surface morphology and surface roughness in the SDS-added process of electroplated Ni-P were revealed with both field emission scanning electronic microscope and atomic force microscope. The influence of SDS addition process in wettability of several commercial solder pastes, including Sn-37Pb, Sn-3.5Ag, and Sn-3.0Ag-0.5Cu, on electroplated Ni-P with various phosphorous contents was evaluated. The surface morphology and the surface roughness of Ni-P layer were affected by SDS addition. It was demonstrated that modified surface morphology and surface roughness acted to enhance the wettability of electroplated Ni-P. In addition, the interfacial reactions between Sn-3.0Ag-0.5Cu and electroplated Ni-P UBM with SDS addition during deposition was also probed and discussed

  3. Electronic and optical properties of vacancy defects in single-layer transition metal dichalcogenides

    Science.gov (United States)

    Khan, M. A.; Erementchouk, Mikhail; Hendrickson, Joshua; Leuenberger, Michael N.

    2017-06-01

    A detailed first-principles study has been performed to evaluate the electronic and optical properties of single-layer (SL) transition metal dichalcogenides (TMDCs) (M X 2 ; M = transition metal such as Mo, W, and X = S, Se, Te), in the presence of vacancy defects (VDs). Defects usually play an important role in tailoring electronic, optical, and magnetic properties of semiconductors. We consider three types of VDs in SL TMDCs: (i) X vacancy, (ii) X2 vacancy, and (iii) M vacancy. We show that VDs lead to localized defect states (LDS) in the band structure, which in turn gives rise to sharp transitions in in-plane and out-of-plane optical susceptibilities, χ∥ and χ⊥. The effects of spin-orbit coupling (SOC) are also considered. We find that SOC splitting in LDS is directly related to the atomic number of the transition metal atoms. Apart from electronic and optical properties we also find magnetic signatures (local magnetic moment of ˜μB ) in MoSe2 in the presence of the Mo vacancy, which breaks the time-reversal symmetry and therefore lifts the Kramers degeneracy. We show that a simple qualitative tight-binding model (TBM), involving only the hopping between atoms surrounding the vacancy with an on-site SOC term, is sufficient to capture the essential features of LDS. In addition, the existence of the LDS can be understood from the solution of the two-dimensional Dirac Hamiltonian by employing infinite mass boundary conditions. In order to provide a clear description of the optical absorption spectra, we use group theory to derive the optical selection rules between LDS for both χ∥ and χ⊥.

  4. Gated field-emitter cathodes for high-power microwave applications

    International Nuclear Information System (INIS)

    Barasch, E.F.; Demroff, H.P.; Elliott, T.S.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

    1992-01-01

    Gated field-emitter cathodes have been fabricated on silicon wafers. Two fabrication approaches have been employed: a knife-edge array and a porous silicon structure. The knife-edge array consists of a pattern of knife-edges, sharpened to ∼200 A radius, configured with an insulated metal gate structure at a gap of ∼500 A. The porous silicon cathode consists of an insulating porous layer, containing pores of ∼50 A diameter, densely spaced in the native silicon, biased for field emission by a thin gate metallization on the surface. Emission current density of 20 A/cm 2 has been obtained with only 10 V bias. Fabrication processes and test results are presented. (Author) 4 figs., tab., 12 refs

  5. Thin-layer chromatography of ternary complexes of group-IIIA metals with 2-thenoyltrifluoroacetone and 2,2'-bipyridyl on cellulose layer

    Energy Technology Data Exchange (ETDEWEB)

    Chao, H E; Saitoh, K; Suzuki, N [Tohoku Univ., Sendai (Japan). Faculty of Science

    1980-11-11

    Normal phase thin-layer chromatographic behaviour of several ternary complexes of group-IIIA metals with 2-thenoyltrifluoroacetone (TTA) and 2,2'bipyridyl (bpy) has been investigated on cellulose layer. The ternary complexes of lanthanide metals show higher mutual separability than the complexes with TTA alone. Mutual separation of TTA complexes with La(III), Ce(III), Eu(III) or Y(III), Sc(III), Th(IV), and U(VI) has been successfully achieved by two-dimensional TLC, primarily with carbon tetrachloride-benzene (75:25) containing 0.02M TTA, and secondary with carbon tetrachloride-hexane (35:65) containing both 0.02M TTA and 0.02M bpy.

  6. Assessment of heavy metals contamination in surface layers of Roztocze National Park forest soils (SE Poland) by indices of pollution.

    Science.gov (United States)

    Mazurek, Ryszard; Kowalska, Joanna; Gąsiorek, Michał; Zadrożny, Paweł; Józefowska, Agnieszka; Zaleski, Tomasz; Kępka, Wojciech; Tymczuk, Maryla; Orłowska, Kalina

    2017-02-01

    In most cases, in soils exposed to heavy metals accumulation, the highest content of heavy metals was noted in the surface layers of the soil profile. Accumulation of heavy metals may occur both as a result of natural processes as well as anthropogenic activities. The quality of the soil exposed to heavy metal contamination can be evaluated by indices of pollution. On the basis of determined heavy metals (Pb, Zn, Cu, Mn, Ni and Cr) in the soils of Roztocze National Park the following indices of pollution were calculated: Enrichment Factor (EF), Geoaccumulation Index (I geo ), Nemerow Pollution Index (PI Nemerow ) and Potential Ecological Risk (RI). Additionally, we introduced and calculated the Biogeochemical Index (BGI), which supports determination of the ability of the organic horizon to accumulate heavy metals. A tens of times higher content of Pb, Zn, Cu and Mn was found in the surface layers compared to their content in the parent material. This distribution of heavy metals in the studied soils was related to the influence of anthropogenic pollution (both local and distant sources of emission), as well as soil properties such as pH, organic carbon and total nitrogen content. Copyright © 2016 Elsevier Ltd. All rights reserved.

  7. Influence of the civil construction debris layer in heavy metals removal of the leachate submitted to recirculation in landfill

    Directory of Open Access Journals (Sweden)

    Maike Rossmann

    2010-08-01

    Full Text Available Little is known about the ability of stabilized organic matter (old MSW and construction waste (RCC to retain heavy metals from leachate generated in landfills. The objective of this study was to assess the potential of MSW to remove old heavy metals in MSW leachate produced by freshly collected, and the effect of RCC in the concentration of heavy metals in effluents from MSW old. In three columns (CR, put a layer of RCC and then MSW old and, on the other three (SR, only MSW old. Analyzed in the leachate and effluent pH, EC, BOD and metals Zn, Cd, Cu and Pb. There were similar and efficient removal of BOD and heavy metals in both treatments. The presence of the layer of RCC was considered important to the overall improvement in effluent quality, but did not influence the concentration of metals in the effluent. The order of retention of metals in the columns was: Cu ~ Pb> Cd> Zn. With the exception of Cd and Zn, all other variables assessed in the effluent were below the maximum standards set in DN 01.08 COPAM / CERH for release effluent into water bodies.

  8. Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

    Science.gov (United States)

    Hanna, Mina J.; Zhao, Han; Lee, Jack C.

    2012-10-01

    We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

  9. A Study on Organic-Metal Halide Perovskite Film Morphology, Interfacial Layers, Tandem Applications, and Encapsulation

    Science.gov (United States)

    Fisher, Dallas A.

    Organic-metal halide perovskites have brought about a new wave of research in the photovoltaic community due to their ideally suited optical and electronic parameters. In less than a decade, perovskite solar cell performance has skyrocketed to unprecedented efficiencies with numerous reported methodologies. Perovskites face many challenges with high-quality film morphology, interfacial layers, and long-term stability. In this work, these active areas are explored through a combination of studies. First, the importance of perovskite film precursor ratios is explored with an in-depth study of carrier lifetime and solvent-grain effects. It was found that excess lead iodide precursor greatly improves the film morphology by reducing pinholes in the solar absorber. Dimethyl sulfoxide (DMSO) solvent was found to mend grains, as well as improve carrier lifetime and device performance, possibly by passivation of grain boundary traps. Second, applications of perovskite with tandem cells is investigated, with an emphasis for silicon devices. Perovskites can easily be integrated with silicon, which already has strong market presence. Additionally, both materials' bandgaps are ideally suited for maximum tandem efficiency. The silicon/perovskite tandem device structure necessitated the optimization of inverted (p-i-n) structure devices. PEDOT:PSS, copper oxide, and nickel oxide p-type layers were explored through a combination of photoluminescent, chemical reactivity, and solar simulation results. Results were hindered due to resistive ITO and rough silicon substrates, but tandem devices displayed Voc indicative of proper monolithic performance. Third, replacement of titanium dioxide n-type layer with iron oxide (Fe 2O3, common rust) was studied. Iron oxide experiences less ultraviolet instability than that of titanium dioxide under solar illumination. It was found that current density slightly decreased due to parasitic absorption from the rust, but that open circuit voltage

  10. 2-periodic metal-organic frameworks (MOFs) as supermolecular building layers (SBLs) for making targeted 3-periodic MOFs

    KAUST Repository

    Eddaoudi, Mohamed; Eubank, Jarrod F.

    2015-01-01

    Embodiments of the present disclosure provide for chemical assemblies, multidimensional metal-organic frameworks (MOFs), supermolecular building layers (SBLs), inorganic molecular building blocks (MBBs), organic MBBs (designed ligands), methods of making each, and methods of using each, and the like. In an embodiment, the composition can be used in catalysis, separations, gas storage, and drug delivery.

  11. 2-periodic metal-organic frameworks (MOFs) as supermolecular building layers (SBLs) for making targeted 3-periodic MOFs

    KAUST Repository

    Eddaoudi, Mohamed

    2015-09-22

    Embodiments of the present disclosure provide for chemical assemblies, multidimensional metal-organic frameworks (MOFs), supermolecular building layers (SBLs), inorganic molecular building blocks (MBBs), organic MBBs (designed ligands), methods of making each, and methods of using each, and the like. In an embodiment, the composition can be used in catalysis, separations, gas storage, and drug delivery.

  12. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  13. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.

    2014-08-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  14. Study of the mechanical properties of single- layer and multi-layer metallic coatings with protective-decorative applications

    Directory of Open Access Journals (Sweden)

    Cherneva Sabina

    2018-01-01

    Full Text Available Single thin coating of matt nickel (Nimat, a mirror bright copper (Cubright, a mirror bright nickel (Nibright and their combinations were electrochemically deposited on brass substrate with thickness 500 μm. The basic aim was electrodeposition of two-layer Cubright/Nimat and Nibright/Cubright systems, and three-layer Nibright Cubrigh/Nimat system, which are among the most widely applied protective and decorative systems in light and medium operating conditions of corrosion. The thicknesses of the obtained films varied from 1 μm to 3.25 μm. They were investigated via nanoindentation experiments, in order to characterize their basic physical and mechanical characteristics, related with their good adhesion and corrosion protective ability, as well as ensuring the integrity of the system “protective coating/substrate” to possible mechanical, dynamic and/or thermal stresses. As a result, load-displacement curves were obtained and indentation hardness and indentation modulus were calculated using the Oliver & Pharr approximation method. The dependence of the indentation modulus and the indentation hardness on the depth of the indentation, surface morphology and structure of the obtained coatings, their texture and surface roughness were investigated too. The obtained results showed that the three-layer Nibright/Cubright /Niimat/CuZn37 system has highest indentation modulus and indentation hardness, following by two-layer Nibright/Cubright system and single layer coatings.

  15. Fabrication of nano-sized metal patterns on flexible polyethylene-terephthalate substrate using bi-layer nanoimprint lithography

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Seon Yong; Jung, Ho Yong [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); Jeong, Jun-Ho [Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials, Yuseong-gu Daejeon, 305-343 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.k [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of)

    2009-05-29

    Polymer films are widely used as a substrate for displays and for solar cells since they are cheap, transparent and flexible, and their material properties are easy to design. Polyethylene-terephthalate (PET) is especially useful for various applications requiring transparency, flexibility and good thermal and chemical resistance. In this study, nano-sized metal patterns were fabricated on flexible PET film by using nanoimprint lithography (NIL). Water-soluble poly-vinyl alcohol (PVA) resin was used as a planarization and sacrificial layer for the lift-off process, as it does not damage the PET films and can easily be etched off by using oxygen plasma. NIL was used to fabricate the nano-sized patterns on the non-planar or flexible substrate. Finally, a nano-sized metal pattern was successfully formed by depositing the metal layer over the imprinted resist patterns and applying the lift-off process, which is economic and environmentally friendly, to the PET films.

  16. Performance of Zr as FCCI barrier layer for metallic fuel of fast reactor

    International Nuclear Information System (INIS)

    Kaity, Santu; Bhagat, R.K.; Kutty, T.R.G.; Kumar, Arun; Laik, A.; Kamath, H.S.

    2011-01-01

    Uranium-plutonium (U-Pu) and uranium-plutonium-zirconium (U-Pu-Zr) alloys have been considered as promising advanced fuels for fast reactor in India because of its high breeding potential, high thermal conductivity, high fissile and fertile atom densities, low doubling time and ease of fabrication compared to other ceramic fuels. The chemical compatibility between the fuel and clad material also known as fuel-clad chemical interaction (FCCI) has been recognized as one of the major concerns about the performance of the metallic fuel. Primarily, two design concepts have been proposed for the metallic fuel development programme for FBRs. One of them is based on sodium bonded ternary U-Pu-Zr alloy with T91 grade steel clad, and the other consists of binary U-Pu alloy mechanically bonded to T91 clad with a Zr liner between the fuel and clad. U will be the axial blanket material for U-Pu binary fuel. In the present investigation, the performance of Zr as FCCI barrier layer was studied through diffusion couple experiments of U/Zr/T91. A thin Zr foil (thickness ∼ 200 μm) sandwiched between U and T91 discs was kept inside a fixture made of Inconel 600 alloy. The fixture was encapsulated in quartz tube under Helium atmosphere and then heated at 650, 700 and 750 deg C for upto 1500 h. The extent of reaction and composition of phases formed were analyzed by scanning electron microscope (SEM) equipped with an energy dispersive spectrometer (EDS) and electron probe microanalyser (EPMA) equipped with wavelength dispersive spectrometer (WDS)

  17. Rigorous assessment of patterning solution of metal layer in 7 nm technology node

    Science.gov (United States)

    Gao, Weimin; Ciofi, Ivan; Saad, Yves; Matagne, Philippe; Bachmann, Michael; Gillijns, Werner; Lucas, Kevin; Demmerle, Wolfgang; Schmoeller, Thomas

    2016-01-01

    In a 7 nm node (N7), the logic design requires a critical poly pitch of 42 to 45 nm and a metal 1 (M1) pitch of 28 to 32 nm. Such high-pattern density pushes the 193 immersion lithography solution toward its limit and also brings extremely complex patterning scenarios. The N7 M1 layer may require a self-aligned quadruple patterning (SAQP) with a triple litho-etch (LE3) block process. Therefore, the whole patterning process flow requires multiple exposure+etch+deposition processes and each step introduces a particular impact on the pattern profiles and the topography. In this study, we have successfully integrated a simulation tool that enables emulation of the whole patterning flow with realistic process-dependent three-dimensional (3-D) profile and topology. We use this tool to study the patterning process variations of the N7 M1 layer including the overlay control, the critical dimension uniformity budget, and the lithographic process window (PW). The resulting 3-D pattern structure can be used to optimize the process flow, verify design rules, extract parasitics, and most importantly, simulate the electric field, and identify hot spots for dielectric reliability. As an example application, the maximum electric field at M1 tip-to-tip, which is one of the most critical patterning locations, has been simulated and extracted. The approach helps to investigate the impact of process variations on dielectric reliability. We have also assessed the alternative M1 patterning flow with a single exposure block using extreme ultraviolet lithography (EUVL) and analyzed its advantages compared to the LE3 block approach.

  18. Polydopamine as an intermediate layer for silver and hydroxyapatite immobilisation on metallic biomaterials surface

    Energy Technology Data Exchange (ETDEWEB)

    Saidin, Syafiqah, E-mail: syafiqahsaidin@gmail.com [Medical Implant Technology Group, Faculty of Biosciences and Medical Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru (Malaysia); Chevallier, Pascale, E-mail: pascale.chevallier@crsfa.ulaval.ca [Laboratory for Biomaterials and Bioengineering, Department of Mining, Metallurgical and Materials Engineering and University Hospital Research Center, Laval University, Quebec City, QC, G1V 0A6 (Canada); Abdul Kadir, Mohammed Rafiq, E-mail: rafiq@biomedical.utm.my [Medical Implant Technology Group, Faculty of Biosciences and Medical Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru (Malaysia); Hermawan, Hendra, E-mail: hendra.hermawan@biomedical.utm.my [Medical Implant Technology Group, Faculty of Biosciences and Medical Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru (Malaysia); Mantovani, Diego, E-mail: Diego.Mantovani@gmn.ulaval.ca [Laboratory for Biomaterials and Bioengineering, Department of Mining, Metallurgical and Materials Engineering and University Hospital Research Center, Laval University, Quebec City, QC, G1V 0A6 (Canada)

    2013-12-01

    Hydroxyapatite (HA) coated implant is more susceptible to bacterial infection as the micro-structure surface which is beneficial for osseointegration, could also become a reservoir for bacterial colonisation. The aim of this study was to introduce the antibacterial effect of silver (Ag) to the biomineralised HA by utilising a polydopamine film as an intermediate layer for Ag and HA immobilisation. Sufficient catechol groups in polydopamine were required to bind chemically stainless steel 316 L, Ag and HA elements. Different amounts of Ag nanoparticles were metallised on the polydopamine grafted stainless steel by varying the immersion time in silver nitrate solution from 12 to 24 h. Another polydopamine layer was then formed on the metallised film, followed by surface biomineralisation in 1.5 Simulated Body Fluid (SBF) solution for 3 days. Several characterisation techniques including X-Ray Photoelectron Spectroscopy, Atomic Force Microscopy, Scanning Electron Microscopy and Contact Angle showed that Ag nanoparticles and HA agglomerations were successfully immobilised on the polydopamine film through an element reduction process. The Ag metallisation at 24 h has killed the viable bacteria with 97.88% of bactericidal ratio. The Ag was ionised up to 7 days which is crucial to prevent bacterial infection during the first stage of implant restoration. The aged functionalised films were considered stable due to less alteration of its chemical composition, surface roughness and wettability properties. The ability of the functionalised film to coat complex and micro scale metal make it suitable for dental and orthopaedic implants application. - Highlights: • Successful immobilisation of Ag and HA on SS316L functionalised with polydopamine • Development of antibacterial film at 97.88% bactericidal ratio • The functionalised films were stable under ageing test at 7 days.

  19. Theoretical study of thin metallic deposit layers: from electronic structure to kinetics

    International Nuclear Information System (INIS)

    Senhaji, Abdelali

    1993-01-01

    We have studied the relation between the equilibrium surface segregation in an alloy A c B 1-c and the kinetics of dissolution of a few metallic layers of A (or B) deposited on a B (or A) substrate. We used an energetic model derived from the electronic structure (T.B.I.M.) allowing us to study the surface segregation both in disordered and in ordered alloys. Moreover we have developed a kinetic model (K.T.B.I.M.) consistent with the TBIM energetic model to study the kinetics both of segregation and dissolution. This process has been applied to the Cu-Pt system for which Auger, LEED and photoemission experiments are in progress at L.U.R.E. Concerning the equilibrium surface segregation in the ordered state we have studied all the possible terminations for the (111) and (100) faces in the various ordered structures occurring on the F.C.C. lattice (L1 0 , L1 1 - L1 2 and L'). In particular we have determined the domain of (meta)stability of each termination, which is very useful to understand the competition between single and double steps in ordered alloys. Studying the kinetics of dissolution of a few layers of Cu (or Pt) deposited on the (111) or (100) face of a Pt (or Cu) substrate, we have shown the formation of surface compounds with a great variety of behaviours depending on the face or on the temperature. All these behaviours can be rationalized with the local equilibrium concept, which we have defined accurately within our model and which allows to connect the dissolution mode with the equilibrium segregation. (author) [fr

  20. A high performance gate drive for large gate turn off thyristors

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, C.P.

    1993-01-01

    Past approaches to gate turn-off (GTO) gating are application oriented, inefficient and dissipate power even when inactive. They allow the gate to avalanch, and do not reduce GTO turn-on and turn-off losses. A new approach is proposed which will allow modular construction and adaptability to large GTOs in the 50 amp to 2000 amp range. The proposed gate driver can be used in large voltage source and current source inverters and other power converters. The approach consists of a power metal-oxide-silicon field effect transistor (MOSFET) technology gating unit, with associated logic and supervisory circuits and an isolated flyback converter as the dc power source for the gating unit. The gate driver formed by the gating unit and the flyback converter is designed for 4000 V isolation. Control and supervisory signals are exchanged between the gate driver and the remote control system via fiber optics. The gating unit has programmable front-porch current amplitude and pulse-width, programmable closed-loop controlled back-porch current, and a turn-off switch capable of supplying negative gate current at demand as a function of peak controllable forward anode current. The GTO turn-on, turn-off and gate avalanch losses are reduced to a minimum. The gate driver itself has minimum operating losses. Analysis, design and practical realization are reported. 19 refs., 54 figs., 1 tab.

  1. Polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating

    Science.gov (United States)

    Hohne, Andrew J.; Moon, Benjamin; Baumbauer, Carol L.; Gray, Tristan; Dilts, James; Shaw, Joseph A.; Dickensheets, David L.; Nakagawa, Wataru

    2017-08-01

    We present the design, fabrication, and characterization of a polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating for use in polarimetric imaging. Gold nanowires were deposited via physical vapor deposition (PVD) onto a silicon surface relief grating that was patterned using electron beam lithography (EBL) and fabricated using standard silicon processing techniques. Optical characterization with a broad-spectrum tungsten halogen light source and a grating spectrometer showed normalized peak TM transmission of 53% with a full-width at half-maximum (FWHM) of 122 nm, which was consistent with rigorous coupled-wave analysis (RCWA) simulations. Simulation results suggested that device operation relied on suppression of the TM transmission caused by surface plasmon polariton (SPP) excitation at the gold-silicon interface and an increase in TM transmission caused by a Fabry-Perot (FP) resonance in the cavity between the gratings. TE rejection occurred at the initial air/gold interface. We also present simulation results of an improved design based on a two-dielectric grating where two different SPP resonances allowed us to improve the shape of the passband by suppressing the side lobes. This newer design resulted in improved side-band performance and increased peak TM transmission.

  2. Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability

    KAUST Repository

    Li, Henan

    2017-07-06

    Recently there have been many research breakthroughs in two-dimensional (2D) materials including graphene, boron nitride (h-BN), black phosphors (BPs), and transition-metal dichalcogenides (TMDCs). The unique electrical, optical, and thermal properties in 2D materials are associated with their strictly defined low dimensionalities. These materials provide a wide range of basic building blocks for next-generation electronics. The chemical vapor deposition (CVD) technique has shown great promise to generate high-quality TMDC layers with scalable size, controllable thickness, and excellent electronic properties suitable for both technological applications and fundamental sciences. The capability to precisely engineer 2D materials by chemical approaches has also given rise to fascinating new physics, which could lead to exciting new applications. In this Review, we introduce the latest development of TMDC synthesis by CVD approaches and provide further insight for the controllable and reliable synthesis of atomically thin TMDCs. Understanding of the vapor-phase growth mechanism of 2D TMDCs could benefit the formation of complicated heterostructures and novel artificial 2D lattices.

  3. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    International Nuclear Information System (INIS)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-01-01

    The properties of WN x C y films deposited by atomic layer deposition (ALD) using WF 6 , NH 3 , and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC 1-x and β-W 2 N with an equiaxed microstructure. The barrier property of this ALD-WN x C y film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min

  4. Heterogeneous photocatalysis with transition metal modified layered titanates for solar hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Pilarski, Martin

    2016-09-05

    The objective of this work was the validation of Cu as a low priced co-catalyst material in comparison to the frequently used noble metal co-catalysts Rh, Au and Pt, as well as the evaluation of alternative sacrificial agents for photocatalytic H2 production. An effective conversion of glycerol was a primary aim of this work, due to its abundance as a coproduct of the bio fuel production. Furthermore, photocatalysts were prepared, which are capable to absorb light from the visible range of the light spectrum. The required band gap reduction was realized by cation doping. In the course of the cation doping process Cu{sup 2+}, Cr{sup 3+}, Fe{sup 3+} and Mn{sup 3+} cations were incorporated by a sol-gel synthesis route into the crystal lattice of the layered Cs{sub 0.68}Ti{sub 1.83}O{sub 4}, which was used as a photocatalyst material. The photocatalytic activity of the prepared photocatalysts was investigated in a self constructed test setup under the irradiation of a xenon arc lamp.

  5. Mesoporous mixed metal oxides derived from P123-templated Mg-Al layered double hydroxides

    International Nuclear Information System (INIS)

    Wang Jun; Zhou Jideng; Li Zhanshuang; He Yang; Lin Shuangshuang; Liu Qi; Zhang Milin; Jiang Zhaohua

    2010-01-01

    We report the preparation of mesoporous mixed metal oxides (MMOs) through a soft template method. Different amounts of P123 were used as structure directing agent to synthesize P123-templated Mg-Al layered double hydroxides (LDHs). After calcination of as-synthesized LDHs at 500 o C, the ordered mesopores were obtained by removal of P123. The mesoporous Mg-Al MMOs fabricated by using 2 wt% P123 exhibited a high specific surface area of 108.1 m 2 /g, and wide distribution of pore size (2-18 nm). An investigation of the 'memory effect' of the mesoporous MMOs revealed that they were successfully reconstructed to ibuprofen intercalated LDHs having different gallery heights, which indicated different intercalation capacities. Due to their mesoporosity these unique MMOs have particular potential as drug or catalyst carriers. - Graphical abstract: Ordered mesoporous Mg-Al MMOs can be obtained through the calcination of P123-templated Mg-Al-CO 3 LDHs. The pore diameter is 2.2 nm. At the presence of ibuprofen, the Mg-Al MMOs can recover to Mg-Al-IBU LDHs, based on its 'remember effect'. Display Omitted

  6. Electrical double layer structure at the gallium metals in a methanol solution of a surface-inactive electrolyte

    International Nuclear Information System (INIS)

    Emets, V.V.

    1997-01-01

    The structure of double electric layer on Ga-, In-Ga- and Tl-Ga-electrodes in methanol solutions of surface-inactive electrolyte has been studied. It is shown that in the absence of chemisorption interaction between metal and solvent, the distance of the nearest approach of methanol dipoles to the surface of Ga-, In-Ga- and Tl-Ga-electrodes is practically the same. Accordingly, the specificity of the metals contact with solvent is reduced solely to their chemisorption interaction. In the zero charge area and for negative charges the chemisorption interaction with methanol molecules increases in the sequence Tl-Ga< In-Ga< Ga. The growth correlates both with the metals acceptor ability towards electron, which is characterized by the work of metal electron escape to vacuum, and donor ability of the solvent characterized by its donor number

  7. Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

    Energy Technology Data Exchange (ETDEWEB)

    Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale 95121 Catania (Italy)

    2016-07-04

    This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

  8. Microtransfer printing of metal ink patterns onto plastic substrates utilizing an adhesion-controlled polymeric donor layer

    International Nuclear Information System (INIS)

    Park, Ji-Sub; Choi, Jun-Chan; Park, Min-Kyu; Bae, Jeong Min; Bae, Jin-Hyuk; Kim, Hak-Rin

    2016-01-01

    We propose a method for transfer-printed electrode patterns onto flexible/plastic substrates, specifically intended for metal ink that requires a high sintering temperature. Typically, metal-ink-based electrodes cannot be picked up for microtransfer printing because the adhesion between the electrodes and the donor substrate greatly increases after the sintering process due to the binding materials. We introduced a polymeric donor layer between the printed electrodes and the donor substrate and effectively reduced the adhesion between the Ag pattern and the polymeric donor layer by controlling the interfacial contact area. After completing a wet-etching process for the polymeric donor layer, we obtained Ag patterns supported on the fine polymeric anchor structures; the Ag patterns could be picked up onto the stamp surface even after the sintering process by utilizing the viscoelastic properties of the elastomeric stamp with a pick-up velocity control. The proposed method enables highly conductive metal-ink-based electrode patterns to be applied on thermally weak plastic substrates via an all-solution process. Metal electrodes transferred onto a film showed superior electrical and mechanical stability under the bending stress test required for use in printed flexible electronics. (paper)

  9. A review of the electrodeposition of metal matrix composite coatings by inclusion of particles in a metal layer: an established and diversifying technology

    OpenAIRE

    Walsh, F.C.; Ponce de Leon, Carlos

    2014-01-01

    Following a brief overview of their history, which dates back to the 1920s with marked developments during the 1960s and 1970s, the principles of composite coatings, achieved by including particles dispersed in a bath into a growing electrodeposited metal layer, are considered. The principles and role of electroplating compared to other techniques for realising such coatings, are considered. A good quality particle dispersion (often aided by a suitable type and concentration of surfactants) a...

  10. Deposition of very thin uniform indium sulfide layers over metallic nano-rods by the Spray-Ion Layer Gas Reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Genduso, G. [Dipartimento di Ingegneria Chimica, Gestionale, Informatica, Meccanica, Università di Palermo, Viale delle Scienze, 90100 Palermo (Italy); Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Inguanta, R.; Sunseri, C.; Piazza, S. [Dipartimento di Ingegneria Chimica, Gestionale, Informatica, Meccanica, Università di Palermo, Viale delle Scienze, 90100 Palermo (Italy); Kelch, C.; Sáez-Araoz, R. [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Zykov, A. [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); present address: Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15,12489 Berlin (Germany); Fischer, Ch.-H., E-mail: fischer@helmholtz-berlin.de [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); second affiliation: Free University Berlin, Chemistry Institute, Takustr. 3, D-14195 Berlin (Germany)

    2013-12-02

    Very thin and uniform layers of indium sulfide were deposited on nickel nano-rods using the sequential and cyclical Spray-ILGAR® (Ion Layer Gas Reaction) technique. Substrates were fabricated by electrodeposition of Ni within the pores of polycarbonate membranes and subsequent chemical dissolution of the template. With respect to the depositions on flat substrates, experimental conditions were modified and optimized for the present geometry. Our results show that nano-rods up to a length of 10 μm were covered uniformly along their full length and with an almost constant film growth rate, thus allowing a good control of the coating thickness; the effect of the deposition temperature was also investigated. However, for high numbers of process steps, i.e. thickness, the films became uneven and crusty, especially at higher temperature, mainly owing to the simultaneous side reaction of the metallic Ni forming nickel sulfide at the surface of the rods. However, such a problem occurs only in the case of reactive nano-rod materials, such as less noble metals. It could be strongly reduced by doubling the spray step duration and thereby sealing the metallic surface before the process step of the sulfurization. Thus, quite smooth, about 100 nm thick coatings could be obtained. - Highlights: • Ni nano-rod substrates were grown within polycarbonate membranes. • We can coat nano-rods uniformly by the Ion Layer Gas Reaction method. • As a model we deposited up to about 100 nm In{sub 2}S{sub 3} on Ni nanorods (250 nm × 10 μm). • Element mapping at insulated rods showed homogenous coating over the full length. • Parameter optimization reduced effectively the Ni sulfide formation.

  11. Simulations of thermal Rayleigh-Marangoni convection in a three-layer liquid-metal-battery model

    Science.gov (United States)

    Köllner, Thomas; Boeck, Thomas; Schumacher, Jörg

    2017-11-01

    Operating a liquid-metal battery produces Ohmic losses in the electrolyte layer that separates both metal electrodes. As a consequence, temperature gradients establish which potentially cause thermal convection since density and interfacial tension depend on the local temperature. In our numerical investigations, we considered three plane, immiscible layers governed by the Navier-Stokes-Boussinesq equations held at a constant temperature of 500°C at the bottom and top. A homogeneous current is applied that leads to a preferential heating of the mid electrolyte layer. We chose a typical material combination of Li separated by LiCl-KCl (a molten salt) from Pb-Bi for which we analyzed the linear stability of pure thermal conduction and performed three-dimensional direct-numerical simulations by a pseudospectral method probing different: electrolyte layer heights, overall heights, and current densities. Four instability mechanisms are identified, which are partly coupled to each other: buoyant convection in the upper electrode, buoyant convection in the molten salt layer, and Marangoni convection at both interfaces between molten salt and electrode. The global turbulent heat transfer follows scaling predictions for internally heated buoyant convection. Financial support by the Deutsche Forschungsgemeinschaft under Grant No. KO 5515/1-1 is gratefully acknowledged.

  12. Some regularities of structure and surface layer properties changing of metal materials after electro-erosion machining

    International Nuclear Information System (INIS)

    Khvostyntsev, K.I.; Kuz'mina, T.S.; Kruglov, V.V.; Lukovkin, G.F.

    1982-01-01

    Effect of electoerosion machining on the surface state of pearlitic class steel of the 12KhN4MFA type, bronzes BrAMts 9-2 and BrAZhNMts 9-4-4-1, of the alloy PT-3V has been studied. As a result of electroerosion machining (EEM) a transformed layer, presenting overheated and partially melted metal, the structure and hardness of which depend on chemical composition of the materials treated, their tendency to phase transformatins and saturation with introduction elements, is formed on the surface of metal materials

  13. Some regularities of structure and surface layer properties changing of metal materials after electro-erosion machining

    Energy Technology Data Exchange (ETDEWEB)

    Khvostyntsev, K.I.; Kuz' mina, T.S.; Kruglov, V.V.; Lukovkin, G.F.

    1982-01-01

    Effect of electoerosion machining on the surface state of pearlitic class steel of the 12KhN4MFA type, bronzes BrAMts 9-2 and BrAZhNMts 9-4-4-1, of the alloy PT-3V has been studied. As a result of electroerosion machining (EEM) a transformed layer, presenting overheated and partially melted metal, the structure and hardness of which depend on chemical composition of the materials treated, their tendency to phase transformatins and saturation with introduction elements, is formed on the surface of metal materials.

  14. Metal-etching-free direct delamination and transfer of single-layer graphene with a high degree of freedom.

    Science.gov (United States)

    Yang, Sang Yoon; Oh, Joong Gun; Jung, Dae Yool; Choi, HongKyw; Yu, Chan Hak; Shin, Jongwoo; Choi, Choon-Gi; Cho, Byung Jin; Choi, Sung-Yool

    2015-01-14

    A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single-layer graphene from a growth substrate, resulting in transferred graphene with nearly zero Dirac voltage due to the absence of residues that would originate from metal etching. Several demonstrations are also presented to show the high degree of freedom and the resulting versatility of this transfer method. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.

    2015-02-13

    Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

  16. An Experimental Study on the Heat Focusing of the Metallic layer in a Severe Accident

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Je-Young; Chung, Bum-Jin [Kyung Hee Univ., Yongin (Korea, Republic of)

    2014-10-15

    By flooding the reactor cavity that surrounds the vessel, significant energy can be removed from relocated corium materials through the vessel wall. The aim of this study is to investigate the heat focusing depending on the aspect ratios and heat transfer characteristic of upper boundary for applications related to severe accident phenomena. Experiments were carried out for Rayleigh numbers and aspect ratio in the range of 8.49x10{sup 7}-5.49x10{sup 9}, 0.128-0.512 respectively. Also, the conditions of the top wall and the side wall are considered: (a) top plate cooling, side wall adiabatic, (b) top plate adiabatic, side wall cooling, (c) both walls cooling. In order to achieve high Rayleigh numbers, the heat transfer experiments were replaced by mass transfer experiments based on heat and mass transfer analogy concept. A sulfuric acid-copper sulfate (H{sub 2}SO{sub 4}-CuSO{sub 4}) electroplating system was adopted as the mass transfer system.An experimental study was performed to investigate the focusing effect appeared in the metallic layer in a severe accident condition. Mass transfer experiments, based on the analogy concept, carried out in order to achieve high Rayleigh number. The height of the side wall was varied for three different cooling conditions: top only, side only, and both top and side. The experimental results agreed well with the Rayleigh-Benard convection correlations of Dropkin and Somerscales and Globe and Dropkin. The test results for the three configurations (only top cooling, only side wall cooling and both walls cooling) presented that the heat transfer on side wall cooling condition without top cooling is biggest. Also, the heat transfer was enhanced by decreasing the aspect ratio (H/R)

  17. STUDY ON MOISTURE-CUR ED POLYURETHANE AS UNDERCOATING LAYER FOR METALLIZATION

    Directory of Open Access Journals (Sweden)

    M.N. Mohamad Ibrahim

    2017-11-01

    Full Text Available In this work a technique of metallizing substrate via electroless plating using moisture-cured polyurethane (MCPU system as the undercoat is presented. MCPU prepolymer was prepared by mixing polyethylene glycol divinyl ether and diphenylmethane-4, 4’-diisocyanate in 1:1 ratio. The effects of etching time as well as curing period on the surface characteristic of MCPU undercoating were investigated. Contact angle measurements, FTIR and SEM were employed to study the changes on the surface of the treated MCPU undercoatsprior to electroless nickel plating. Electroless plating was performed using nickel bath and visual inspection was performed after completing the electroless plating cycles. Relative increase in wettability of the treated MCPU was observed. The surface became hydrophilic after subjecting to mild etching for 1 minute. SEM analysis revealed different pitted structures on the treated MCPU that were cured at different periods. FTIR analysis of the treated MCPU showed some chemical changes marked by the presence of free hydroxyl group and decrease of CH (methylene, urethane C=O, urethane amide and ether peaks. FTIR also showed the sign of further NCO reaction, which indicates by the decrease of NCO peak and increase of NH and urea C=O peaks. The standard pull-off testing method (ASTM D 4541 was employed to evaluate the adhesion strength of nickel deposits coated on MCPU undercoating layer.The test results revealed that curing period and etching time influence the adhesion performance.The results also show that at a selected curing period, prolong etching time will decrease the adhesion strength. Meanwhile prolong curing period will improve the adhesion strength.

  18. A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2011-01-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the

  19. Numerical Investigation of Turbulent Natural Convection Heat Transfer in an Internally-Heated Melt Pool and Metallic Layer

    International Nuclear Information System (INIS)

    Nourgaliev, R.R.; Dinh, A.T.; Dinh, T.N.; Sehgal, B.R.

    1999-01-01

    This paper presents results of numerical investigation of turbulent natural convection in an internally-heated oxidic pool, and in a metallic layer heated from below and cooled from top and sidewalls. Emphasis is placed upon applicability of the existing heat transfer correlations (obtained from simulant-material experiments) in assessments of a prototypic severe reactor accident. The objectives of this study are (i) to improve the current understanding of the physics of unstably stratified flows, and (ii) to reduce uncertainties associated with modeling and assessment of natural convection heat transfer in the above configuration. Prediction capabilities of different turbulence modeling approaches are first examined and discussed, based on extensive results of numerical investigations performed by present authors. Findings from numerical modeling of turbulent natural convection flow and heat transfer in melt pools and metallic layers are then described. (authors)

  20. Comparison of the stress distribution in the metallic layers of flexible pipes using two alternative Bflex formulations

    OpenAIRE

    Shi, Yunzhu

    2014-01-01

    Axisymmetric load is the most common load acting on flexible pipe. Modelling axisymmetric load correctly is very important to estimate the strength of a flexible pipe. The purpose of the thesis is to compare the stress distribution in metallic layers under three load case, i.e. tension, internal pressure and external pressure. Literature study and discussion to mechanical properties of flexible pipe and finite element modelling method are included in the thesis. The modelling program is BFLEX...