The influence of noble-gas ion bombardment on the electrical and optical properties of clean silicon surfaces

International Nuclear Information System (INIS)

Martens, J.W.D.

1980-01-01

A study of the effect of argon and helium ion bombardment on the electrical and optical properties of the clean silicon (211) surface is described. The objective of the study was to determine the effect of noble gas ions on the density of surface states at the clean silicon surface. (Auth.)

Porous Silicon Sensors- Elusive and Erudite

OpenAIRE

H. Saha, Prof.

2017-01-01

Porous Silicon Sensors have been fabricated and tested successfully over the last few years as humidity sensors, vapour sensors, gas sensors, piezoresistive pressure sensors and bio- sensors. In each case it has displayed remarkably sensitivity, relatively low temperature operation and ease of fabrication. Brief description of fabrication and properties of all these types of different sensors is reported in this paper. The barriers of porous silicon like contact, non- uniformity, instability ...

Dependence of silicon carbide coating properties on deposition parameters: preliminary report

International Nuclear Information System (INIS)

Lauf, R.J.; Braski, D.N.

1980-05-01

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide, which acts as a pressure vessel and provides containment of metallic fission products. The silicon carbide (SiC) is deposited by the thermal decomposition of methyltrichlorosilane (CH 3 SiCl 3 or MTS) in an excess of hydrogen. The purpose of the current study is to determine how the deposition variables affect the structure and properties of the SiC layer

Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method

Directory of Open Access Journals (Sweden)

Nu Si A. Eom

2017-11-01

Full Text Available In this study, a graphene-doped porous silicon (G-doped/p-Si substrate for low ppm H2 gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material, and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a simple capillary force-assisted solution dropping method on p-Si substrates, whose porosity was generated through an electrochemical etching process. G-doped/p-Si was fabricated with various graphene concentrations and exploited as a H2 sensor that was operated at room temperature. The sensing mechanism of the sensor with/without graphene decoration on p-Si was proposed to elucidate the synergetic gas sensing effect that is generated from the interface between the graphene and p-type silicon.

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

Carbon Nanotube-Silicon Nanowire Heterojunction Solar Cells with Gas-Dependent Photovoltaic Performances and Their Application in Self-Powered NO2 Detecting.

Science.gov (United States)

Jia, Yi; Zhang, Zexia; Xiao, Lin; Lv, Ruitao

2016-12-01

A multifunctional device combining photovoltaic conversion and toxic gas sensitivity is reported. In this device, carbon nanotube (CNT) membranes are used to cover onto silicon nanowire (SiNW) arrays to form heterojunction. The porous structure and large specific surface area in the heterojunction structure are both benefits for gas adsorption. In virtue of these merits, gas doping is a feasible method to improve cell's performance and the device can also work as a self-powered gas sensor beyond a solar cell. It shows a significant improvement in cell efficiency (more than 200 times) after NO2 molecules doping (device working as a solar cell) and a fast, reversible response property for NO2 detection (device working as a gas sensor). Such multifunctional CNT-SiNW structure can be expected to open a new avenue for developing self-powered, efficient toxic gas-sensing devices in the future.

Process for making silicon

Science.gov (United States)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Process of preparing tritiated porous silicon

Science.gov (United States)

Tam, Shiu-Wing

1997-01-01

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

Silicon surface damage caused by reactive ion etching in fluorocarbon gas mixtures containing hydrogen

International Nuclear Information System (INIS)

Norstroem, H.; Blom, H.; Ostling, M.; Nylandsted Larsen, A.; Keinonen, J.; Berg, S.

1991-01-01

For selective etching of SiO 2 on silicon, gases or gas mixtures containing hydrogen are often used. Hydrogen from the glow discharge promotes the formation of a thin film polymer layer responsible for the selectivity of the etching process. The reactive ion etch (RIE) process is known to create damage in the silicon substrate. The influence of hydrogen on the damage and deactivation of dopants is investigated in the present work. The distribution of hydrogen in silicon, after different etching and annealing conditions have been studied. The influence of the RIE process on the charge carrier concentration in silicon has been investigated. Various analytical techniques like contact resistivity measurements, four point probe measurements, and Hall measurements have been used to determine the influence of the RIE process on the electrical properties of processed silicon wafers. The hydrogen profile in as-etched and post annealed wafers was determined by the 1 H( 15 N,αγ) 12 C nuclear reaction. The depth of the deactivated surface layer is discussed in terms of the impinging hydrogen ion energy, i.e., the possibility of H + ions to pick up an energy equal to the peak-to-peak voltage of the rf signal

Apparatus for making molten silicon

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Gluteal Black Market Silicone-induced Renal Failure: A Case Report and Literature Review.

Science.gov (United States)

Matson, Andrea; Faibisoff, Burt

2017-11-01

Very few cases of successful surgical treatment for renal failure due to gluteal silicone injections have been reported in the literature. The silicone toxicity and subsequent renal failure seem to follow repetitive silicone injections and silicone injections in large quantities. This is a case of a 31-year-old woman who developed renal failure after 6 years of gluteal silicone injections who underwent radical resection of bilateral gluteal regions in an attempt to mitigate her impending complete renal failure. A systematic review of the literature was conducted using PubMed database and with assistance from medical library staff to conduct keyword searches for "Silicone," "Renal failure," "Silicone emboli syndrome," "Silicone granuloma," and "Silicone end organ toxicity." The search results were reviewed by the authors and selected based on the relevance to the case report presented. Extensive literature relating to silicone granulomas and their systemic effects supports the use of steroids for immediate treatment and eventual surgical resection for cure of the various silicone-related end-organ toxicities including renal failure.

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Directory of Open Access Journals (Sweden)

Kae Dal Kwack

2011-01-01

Full Text Available A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Separation of silicon carbide-coated fertile and fissile particles by gas classification

International Nuclear Information System (INIS)

Vaughen, V.C.A.

1976-07-01

The separation of 235 U and 233 U in the reprocessing of HTGR fuels is a key feature of the feed-breed fuel cycle concept. This is attained in the Fort St. Vrain (FSV) reactor by coating the fissile (Th- 235 U) particles and the fertile (Th- 233 U) particles separately with silicon carbide (SiC) layers to contain the fission products and to protect the kernels from burning in the head-end reprocessing steps. Pneumatic (gas) classification based on size and density differences is the reference process for separating the SiC-coated particles into fissile and fertile streams for subsequent handling. Terminal velocities have been calculated for the +- 2 sigma ranges of particle sizes and densities for ''Fissile B''--''Fertile A'' particles used in the FSV reactor. Because of overlapping particle fractions, a continuous pneumatic separator appears infeasible; however, a batch separation process can be envisioned. Changing the gas from air to CO 2 and/or the temperature to 300 0 C results in less than 10 percent change in calculated terminal velocities. Recently reported work in gas classification is discussed in light of the theoretical calculations. The pneumatic separation of fissile and fertile particles needs more study, specifically with regard to (1) measuring the recoveries and separation efficiencies of actual fissile and fertile fractions in the tests of the pneumatic classifiers; and (2) improving the contactor design or flowsheet to avoid apparent flow separation or flooding problems at the feed point when using the feed rates required for the pilot plant

Thin film polycrystalline silicon solar cells. Quarterly technical progress report No. 3, 1 April 1980-30 June 1980

Energy Technology Data Exchange (ETDEWEB)

Sarma, K. R.; Rice, M. J.; Legge, R.; Ellis, R. J.

1980-06-01

During this third quarter of the program, the high pressure plasma (hpp) deposition process has been thoroughly evaluated using SiHCl/sub 3/ and SiCl/sub 4/ silicon source gases, by the gas chromatographic analysis of the effluent gases from the reactor. Both the deposition efficiency and reactor throughput rate were found to be consistently higher for hpp mode of operation compared to conventional CVD mode. The figure of merit for various chlorosilanes as a silicon source gas for hpp deposition is discussed. A new continuous silicon film deposition scheme is developed, and system design is initiated. This new system employs gas interlocks and eliminates the need for gas curtains which have been found to be problematic. Solar cells (2 cm x 2 cm area) with AM1 efficiencies of up to 12% were fabricated on RTR grain enhanced hpp deposited films. The parameters of a 12% cell under simulated AM1 illumination were: V/sub OC/ = 0.582 volts, J/sub SC/ = 28.3 mA/cm/sup 2/ and F.F. = 73.0%.

Production of Solar Grade (SoG) Silicon by Refining Liquid Metallurgical Grade (MG) Silicon: Final Report, 19 April 2001; FINAL

International Nuclear Information System (INIS)

Khattack, C. P.; Joyce, D. B.; Schmid, F.

2001-01-01

This report summarizes the results of the developed technology for producing SoG silicon by upgrading MG silicon with a cost goal of$20/kg in large-scale production. A Heat Exchanger Method (HEM) furnace originally designed to produce multicrystalline ingots was modified to refine molten MG silicon feedstock prior to directional solidification. Based on theoretical calculations, simple processing techniques, such as gas blowing through the melt, reaction with moisture, and slagging have been used to remove B from molten MG silicon. The charge size was scaled up from 1 kg to 300 kg in incremental steps and effective refining was achieved. After the refining parameters were established, improvements to increase the impurity reduction rates were emphasized. With this approach, 50 kg of commercially available as-received MG silicon was processed for a refining time of about 13 hours. A half life of and lt;2 hours was achieved, and the B concentration was reduced to 0.3 ppma and P concentration to 10 ppma from the original values of 20 to 60 ppma, and all other impurities to and lt;0.1 ppma. Achieving and lt;1 ppma B by this simple refining technique is a breakthrough towards the goal of achieving low-cost SoG silicon for PV applications. While the P reduction process was being optimized, the successful B reduction process was applied to a category of electronics industry silicon scrap previously unacceptable for PV feedstock use because of its high B content (50-400 ppma). This material after refining showed that its B content was reduced by several orders of magnitude, to(approx)1 ppma (0.4 ohm-cm, or about 5x1016 cm-3). NREL's Silicon Materials Research team grew and wafered small and lt;100 and gt; dislocation-free Czochralski (Cz) crystals from the new feedstock material for diagnostic tests of electrical properties, C and O impurity levels, and PV performance relative to similar crystals grown from EG feedstock and commercial Cz wafers. The PV conversion

Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

Science.gov (United States)

Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

2018-05-01

The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

Full Thickness Macular Hole Closure after Exchanging Silicone-Oil Tamponade with C3F8 without Posturing

Directory of Open Access Journals (Sweden)

Tina Xirou

2011-05-01

Full Text Available Purpose: To report a case of macular hole closure after the exchange of a silicone-oil tamponade with gas C3F8 14%. Method: A 64-year-old female patient with a stage IV macular hole underwent a three-port pars-plana vitrectomy and internal limiting membrane peeling. Due to the patient’s chronic illness (respiratory problems, a silicone-oil tamponade was preferred. However, the macula hole was still flat opened four months postoperatively. Therefore, the patient underwent an exchange of silicone oil with gas C3F8 14%. No face-down position was advised postoperatively due to her health problems. Results: Macular hole closure was confirmed with optical coherence tomography six weeks after exchanging the silicone oil with gas. Conclusions: Macular hole surgery using a silicone-oil tamponade has been proposed as treatment of choice for patients unable to posture. In our case, the use of a long-acting gas (C3F8 14%, even without posturing, proved to be more effective.

Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

Directory of Open Access Journals (Sweden)

Tianjian Li

2015-04-01

Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

Process for making silicon from halosilanes and halosilicons

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Migration of noble gas atoms in interaction with vacancies in silicon

International Nuclear Information System (INIS)

Pizzagalli, L; Charaf-Eddin, A

2015-01-01

First principles calculations in combination with the nudged elastic band method have been performed in order to determine the mobility properties of various noble gas species (He, Ne, Ar, Kr, and Xe) in silicon, a model semiconducting material. We focussed on single impurity, in interstitial configuration or forming a complex with a mono- or a di-vacancy, since the latter are known to be present and to play a key role in the formation of extended defects like bubbles or platelets. We determined several migration mechanisms and associated activation energies and have discussed these results in relation to available experiments. In particular, conflicting measured values of the migration energy of helium are explained by the present calculations. We also predict that helium diffuses solely as an interstitial, while an opposite behaviour is found for heavier species such as Ar, Kr, and Xe, with the prevailing role of complexes in that case. Finally, our calculations indicate that extended defects evolution by Ostwald ripening is possible for helium and maybe neon, but is rather unlikely for heavier noble gas species. (paper)

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Formation and photoluminescence of "Cauliflower" silicon nanoparticles

NARCIS (Netherlands)

Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

2015-01-01

The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

The processing and potential applications of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Syyuan Shieh.

1992-07-01

Stability of a cylindrical pore under the influence of surface energy is important for porous silicon (PS) processing in the integrated circuit industry. Once the zig-zag cylindrical pores of porous silicon or oxidized porous silicon (OPS) are unstable and breakup into rows of isolated spherical pores, oxidation of PS and densification/nitridation of OPS become difficult. Swing to difficulty transport of reactant gas (O{sub 2}, NH{sub 3}) or the trapped gas (for densification of OPS). A first order analysis of the stability of a cylindrical pore or cylinder is considered first. Growth of small sinusoidal perturbations by viscous flow or evaporation/condensation result in dependence of perturbation growth rate on perturbation wavelength. Rapid thermal oxidation (RTO) of porous silicon is proposed as an alternative for the tedious two-step 300 and 800C oxidation process. Transmission electron microscopy, energy dispersive spectroscopy ESCA are used for quality control. Also, rapid thermal nitridation of oxidized porous silicon in ammonia is proposed to enhance OPS resistance to HF solution. Pores breakup of OPS results in a trapped gas problem during densification. Wet helium is proposed as OPS densification ambient gas to shorten densification time. Finally, PS is proposed to be an extrinsic gettering center in silicon wafers. The suppression of oxidation-induced stacking faults is used to demonstrate the gettering ability. Possible mechanism is discussed.

The processing and potential applications of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Shieh, Syyuan [Univ. of California, Berkeley, CA (United States)

1992-07-01

Stability of a cylindrical pore under the influence of surface energy is important for porous silicon (PS) processing in the integrated circuit industry. Once the zig-zag cylindrical pores of porous silicon or oxidized porous silicon (OPS) are unstable and breakup into rows of isolated spherical pores, oxidation of PS and densification/nitridation of OPS become difficult. Swing to difficulty transport of reactant gas (O₂, NH₃) or the trapped gas (for densification of OPS). A first order analysis of the stability of a cylindrical pore or cylinder is considered first. Growth of small sinusoidal perturbations by viscous flow or evaporation/condensation result in dependence of perturbation growth rate on perturbation wavelength. Rapid thermal oxidation (RTO) of porous silicon is proposed as an alternative for the tedious two-step 300 and 800C oxidation process. Transmission electron microscopy, energy dispersive spectroscopy ESCA are used for quality control. Also, rapid thermal nitridation of oxidized porous silicon in ammonia is proposed to enhance OPS resistance to HF solution. Pores breakup of OPS results in a trapped gas problem during densification. Wet helium is proposed as OPS densification ambient gas to shorten densification time. Finally, PS is proposed to be an extrinsic gettering center in silicon wafers. The suppression of oxidation-induced stacking faults is used to demonstrate the gettering ability. Possible mechanism is discussed.

Evaluation and silicon nitride internal combustion engine components. Final report, Phase I

Energy Technology Data Exchange (ETDEWEB)

Voldrich, W. [Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.

1992-04-01

The feasibility of silicon nitride (Si{sub 3}N{sub 4}) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components` gas-pressure sinterable Si{sub 3}N{sub 4} (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si{sub 3}N{sub 4} components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

Silicon ribbon growth by a capillary action shaping technique. Annual report (Quarterly technical progress report No. 9)

Energy Technology Data Exchange (ETDEWEB)

Schwuttke, G.H.; Ciszek, T.F.; Kran, A.

1977-10-01

Progress on the technological and economical assessment of ribbon growth of silicon by a capillary action shaping technique is reported. Progress in scale-up of the process from 50 mm to 100 mm ribbon widths is presented, the use of vitreous carbon as a crucible material is analyzed, and preliminary tests of CVD Si/sub 3/N/sub 4/ as a potential die material are reported. Diffusion length measurements by SEM, equipment and procedure for defect display under MOS structure in silicon ribbon for lifetime interpretation, and an assessment of ribbon technology are discussed. (WHK)

Microelectromechanical pump utilizing porous silicon

Science.gov (United States)

Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

2011-07-19

A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

Performance of casting aluminum-silicon alloy condensing heating exchanger for gas-fired boiler

Science.gov (United States)

Cao, Weixue; Liu, Fengguo; You, Xue-yi

2018-01-01

Condensing gas boilers are widely used due to their high heat efficiency, which comes from their ability to use the recoverable sensible heat and latent heat in flue gas. The condensed water of the boiler exhaust has strong corrosion effect on the heat exchanger, which restricts the further application of the condensing gas boiler. In recent years, a casting aluminum-silicon alloy (CASA), which boasts good anti-corrosion properties, has been introduced to condensing hot water boilers. In this paper, the heat transfer performance, CO and NOx emission concentrations and CASA corrosion resistance of a heat exchanger are studied by an efficiency bench test of the gas-fired boiler. The experimental results are compared with heat exchangers produced by Honeywell and Beka. The results show that the excess air coefficient has a significant effect on the heat efficiency and CO and NOx emission of the CASA water heater. When the excess air coefficient of the CASA gas boiler is 1.3, the CO and NOx emission concentration of the flue gas satisfies the design requirements, and the heat efficiency of water heater is 90.8%. In addition, with the increase of heat load rate, the heat transfer coefficient of the heat exchanger and the heat efficiency of the water heater are increased. However, when the heat load rate is at 90%, the NOx emission in the exhaust gas is the highest. Furthermore, when the temperature of flue gas is below 57 °C, the condensation of water vapor occurs, and the pH of condensed water is in the 2.5 5.5 range. The study shows that CASA water heater has good corrosion resistance and a high heat efficiency of 88%. Compared with the heat exchangers produced by Honeywell and Beka, there is still much work to do in optimizing and improving the water heater.

Black Silicon formation using dry etching for solar cells applications

International Nuclear Information System (INIS)

Murias, D.; Reyes-Betanzo, C.; Moreno, M.; Torres, A.; Itzmoyotl, A.; Ambrosio, R.; Soriano, M.; Lucas, J.; Cabarrocas, P. Roca i

2012-01-01

A study on the formation of Black Silicon on crystalline silicon surface using SF 6 /O 2 and SF 6 /O 2 /CH 4 based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

Embolism by silicone - Report of cases and revision of the literature

International Nuclear Information System (INIS)

Paulina Ojeda; Andres Devivero; Adriana Moreno; Monica Sossa

2004-01-01

In Colombia, as in other countries around the world, the current physical beauty concept has increased the number of plastic surgeries, however not everyone has access to these procedures. For those who are less favored culturally and economically, the increasing alternative of an illegal subcutaneous silicone injection, performed by untrained and unscrupulous personnel, with the purpose of changing physically, endangers the patients' life. In this study, 2 cases of pulmonary embolism caused by silicone, which developed respiratory failure and received vital support in Santa Clara Hospital ICU in Bogota, are reviewed. They had a favorable evolution and adequate survival contrary to other reports found in the worldwide literature. The objective is to describe the clinical characteristics and follow-up of the two patients with pulmonary embolism caused by silicone. The clinical records of the two patients who were hospitalized in the ICU of Santa Clara Hospital in Bogota were reviewed and described. Afterwards, the existing literature on Silicone and respiratory failure was reviewed in Pub Med, OVID and HIGHWIRE databases. The illegal application of silicone injections is related to embolism caused by this substance, pulmonary and extra-pulmonary vascular and immunological mechanics impairment and high risk of death

Effect of oxygen and hydrogen on the optical and electrical characteristics of porous silicon. Towards sensor applications

International Nuclear Information System (INIS)

Green, S.

2000-02-01

The effect of adsorbed oxygen and hydrogen gas on porous silicon has been investigated using two different techniques, viz. optical and electrical. The photoluminescence quenching by oxygen and hydrogen was found to be reversible with a response time of the order of 3000 s. Unlike any reported porous silicon gas quenching systems, both the extent and rate of quenching were found to be a function of photoluminescence wavelength. The quenching is attributed to charge transfer from the conduction band of porous silicon to the lowest unoccupied molecular orbital of oxygen and hydrogen, respectively. Surface conductance measurements (aluminium contacts) show that the principal charge transfer process is via tunnelling, with some conduction through the underlying bulk p-type silicon layer. Symmetrical current-voltage plots were obtained for this system which were attributed to pinning of the aluminium-porous silicon Fermi level at mid-gap by the high surface trap density. An approximate doubling of the aluminium electrode separation was found to reduce approximately fourfold the initial rate of increase in surface conductance on adsorption of oxygen at a pressure of 10 torr. To the best of the author's knowledge this is the first time that such an effect has been reported in a room temperature solid state gas sensor. Gas sensitivity measurements using surface contacts show a logarithmic response to the concentration of oxygen up to a pressure of 100 torr with a rapid response, of 300 s. A 39% increase in surface conductance occurs on exposure of the device to 100 torr of oxygen. The surface conductance of the device decreases by 34% on exposure to one atmosphere of hydrogen with a response time of the order 2000 s. Transverse conductance (DC) measurements show that Au/PS/p-Si/Al..Ag devices behave like a field-dependent diode. An admittance spectroscopy technique has been applied to porous silicon for the first time to calculate g 0 , the trap density at the Fermi level

Methods of Si based ceramic components volatilization control in a gas turbine engine

Science.gov (United States)

Garcia-Crespo, Andres Jose; Delvaux, John; Dion Ouellet, Noemie

2016-09-06

A method of controlling volatilization of silicon based components in a gas turbine engine includes measuring, estimating and/or predicting a variable related to operation of the gas turbine engine; correlating the variable to determine an amount of silicon to control volatilization of the silicon based components in the gas turbine engine; and injecting silicon into the gas turbine engine to control volatilization of the silicon based components. A gas turbine with a compressor, combustion system, turbine section and silicon injection system may be controlled by a controller that implements the control method.

Photonic molecules for improving the optical response of macroporous silicon photonic crystals for gas sensing purposes.

Science.gov (United States)

Cardador, D; Segura, D; Rodríguez, A

2018-02-19

In this paper, we report the benefits of working with photonic molecules in macroporous silicon photonic crystals. In particular, we theoretically and experimentally demonstrate that the optical properties of a resonant peak produced by a single photonic atom of 2.6 µm wide can be sequentially improved if a second and a third cavity of the same length are introduced in the structure. As a consequence of that, the base of the peak is reduced from 500 nm to 100 nm, while its amplitude remains constant, increasing its Q-factor from its initial value of 25 up to 175. In addition, the bandgap is enlarged almost twice and the noise within it is mostly eliminated. In this study we also provide a way of reducing the amplitude of one or two peaks, depending whether we are in the two- or three-cavity case, by modifying the length of the involved photonic molecules so that the remainder can be used to measure gas by spectroscopic methods.

Silicon subsystem mechanical engineering closeout report for the Solenoidal Detector Collaboration

Energy Technology Data Exchange (ETDEWEB)

Hanlon, J.; Christensen, R.W.; Hayman, G.; Jones, D.C.; Ross, R.; Wilds, W.; Yeamans, S.; Ziock, H.J.

1995-02-01

The authors group at Los Alamos National Laboratory was responsible for the mechanical engineering of the silicon tracking system of the Solenoidal Detector Collaboration (SDC) experiment of the Superconducting Super Collider (SSC) project. The responsibility included the overall design of the system from the mechanical point of view, development and integration of the cooling system, which was required to remove the heat generated by the front-end electronics, assembly of the system to extremely tight tolerances, and verification that the construction and operational stability and alignment tolerances would be met. A detailed description of the concepts they developed and the work they performed can be found in a report titled ``Silicon Subsystem Mechanical Engineering Work for the Solenoidal Detector Collaboration`` which they submitted to the SSC Laboratory. In addition to the mechanical engineering work, they also performed activation, background, and shielding studies for the SSC program. Much of the work they performed was potentially useful for other future high energy physics (HEP) projects. This report describes the closeout work that was performed for the Los Alamos SDC project. Four major tasks were identified for completion: (1) integration of the semi-automated assembly station being developed and construction of a precision part to demonstrate solutions to important general assembly problems (the station was designed to build precision silicon tracker subassemblies); (2) build a state-of-the-art TV holography (TVH) system to use for detector assembly stability tests; (3) design, build, and test a water based cooling system for a full silicon shell prototype; and (4) complete and document the activation, background, and shielding studies, which is covered in a separate report.

Silicon subsystem mechanical engineering closeout report for the Solenoidal Detector Collaboration

International Nuclear Information System (INIS)

Hanlon, J.; Christensen, R.W.; Hayman, G.; Jones, D.C.; Ross, R.; Wilds, W.; Yeamans, S.; Ziock, H.J.

1995-01-01

The authors group at Los Alamos National Laboratory was responsible for the mechanical engineering of the silicon tracking system of the Solenoidal Detector Collaboration (SDC) experiment of the Superconducting Super Collider (SSC) project. The responsibility included the overall design of the system from the mechanical point of view, development and integration of the cooling system, which was required to remove the heat generated by the front-end electronics, assembly of the system to extremely tight tolerances, and verification that the construction and operational stability and alignment tolerances would be met. A detailed description of the concepts they developed and the work they performed can be found in a report titled ''Silicon Subsystem Mechanical Engineering Work for the Solenoidal Detector Collaboration'' which they submitted to the SSC Laboratory. In addition to the mechanical engineering work, they also performed activation, background, and shielding studies for the SSC program. Much of the work they performed was potentially useful for other future high energy physics (HEP) projects. This report describes the closeout work that was performed for the Los Alamos SDC project. Four major tasks were identified for completion: (1) integration of the semi-automated assembly station being developed and construction of a precision part to demonstrate solutions to important general assembly problems (the station was designed to build precision silicon tracker subassemblies); (2) build a state-of-the-art TV holography (TVH) system to use for detector assembly stability tests; (3) design, build, and test a water based cooling system for a full silicon shell prototype; and (4) complete and document the activation, background, and shielding studies, which is covered in a separate report

Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2

Science.gov (United States)

Gavrilov, G. E.; Vakhtel, V. M.; Maysuzenko, D. A.; Tavtorkina, T. A.; Fetisov, A. A.; Shvetsova, N. Yu.

2017-12-01

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO2 and a 60%Ar + 30%CO2 + 10%CF4 working mixture was stimulated by a 90Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF4 + 20%CO2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO2 compounds was obtained.

Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

NARCIS (Netherlands)

Lambertz, A.

2015-01-01

The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

Flammable gas project topical report

Energy Technology Data Exchange (ETDEWEB)

Johnson, G.D.

1997-01-29

The flammable gas safety issue was recognized in 1990 with the declaration of an unreviewed safety question (USQ) by the U. S. Department of Energy as a result of the behavior of the Hanford Site high-level waste tank 241-SY-101. This tank exhibited episodic releases of flammable gas that on a couple of occasions exceeded the lower flammability limit of hydrogen in air. Over the past six years there has been a considerable amount of knowledge gained about the chemical and physical processes that govern the behavior of tank 241-SY-1 01 and other tanks associated with the flammable gas safety issue. This report was prepared to provide an overview of that knowledge and to provide a description of the key information still needed to resolve the issue. Items covered by this report include summaries of the understanding of gas generation, retention and release mechanisms, the composition and flammability behavior of the gas mixture, the amounts of stored gas, and estimated gas release fractions for spontaneous releases. `Me report also discusses methods being developed for evaluating the 177 tanks at the Hanford Site and the problems associated with these methods. Means for measuring the gases emitted from the waste are described along with laboratory experiments designed to gain more information regarding rates of generation, species of gases emitted and modes of gas storage and release. Finally, the process for closing the USQ is outlined as are the information requirements to understand and resolve the flammable gas issue.

Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 1, 15 September 1979-31 December 1979

Energy Technology Data Exchange (ETDEWEB)

Liaw, M.; Secco, F.; Ingle, B.; Down, D.

1980-02-01

Over the past several years, Motorola's Materials Technology Laboratory (MTL), has been conducting several projects with goals directed at the production of high quality low cost silicon crystals. One of the projects which is being investigated is the direct purification of MG-Si. A unique characteristic of the approach used by this project is the use of a crystal puller to perform both purification and crystal growth. Sequential steps of purification were taken. By the completion of this series of purification, the purified MG-Si melt will be further purified by impurity redistribution using ingot pulling. The final purified silicon will be in an ingot form of desired dimensions for slicing into silicon sheets. The sequential steps of purification include: (1) leaching of MG-Si charge, (2) phase separation, (3) reactive gas treatment, (4) liquid-liquid extraction (called Slagging), and (5) purification by redistribution of impurities using ingot pulling. Progress on items (1) and (2) is reported. (WHK)

Management reporting in gas and fuel

International Nuclear Information System (INIS)

Taylor, J.L.; Foot, B.G.

1997-01-01

Gas and Fuel is the sole supplier of reticulated natural gas to 1.3 m customers in the State of Victoria, Australia. Reporting is performed monthly and is tailored to satisfy the requirements of the Board, executive management and business units. The reports include profit and cash statements, gas sales data, capital expenditure, benchmarks, operational data and human resources information. The reports are a mixture of written commentary, accounting statements and graphical presentations. The reports are used at monthly Board and executive meetings to review performance and manage the business. (au)

Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

International Nuclear Information System (INIS)

Shieh, S.Y.; Evans, J.W.

1992-01-01

This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

Science.gov (United States)

Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

2018-03-27

There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

FY 1998 annual report. Research and development on ceramic gas turbine (300kW class)

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-04-01

Research and development have been made on a small ceramic gas turbine which is high in efficiency, low in pollutant emission, capable of corresponding to different fuels, and can be utilized in cogeneration and/or movable electric power generation systems. Fundamental researches in developing and researching heat resistant ceramic parts have been carried out on a method for fabricating turbine nozzles using heat resistant silicon nitride, improvement in accuracy in fabricating combustors using the heat resistant silicon nitride, and casting of turbine blades made from sialon. In developing the devices, researches were made on reliability of bond between a ceramic blade and a metallic disk, air-fuel ratio in a combustor, distribution of fuel concentrations, fuel injection methods, reduction of loss in a diffuser in a compressor, and matching of the diffuser with an impeller. In addition, research and development were performed on a single shaft ceramic gas turbine for cogeneration and a double shaft ceramic gas turbine. Researches were executed on reliability of ceramic materials. (NEDO)

Annual report 1978. [Natural gas

Energy Technology Data Exchange (ETDEWEB)

1979-05-01

In the 1978 annual reports of the Deutscher Verein des Gas- und Wasserfaches (DVGW), the Bundesverband der deutschen Gas- und Wasserwirtschaft (BGW), and the Technische Vereinigung der Firmen im Gas- und Wasserfach e.V. (FIGAWA), the activities of organisations and Laender groups are dealt with, as well as tasks, work, and sales promotion measures.

Linear electro-optic effect in cubic silicon carbide

Science.gov (United States)

Tang, Xiao; Irvine, Kenneth G.; Zhang, Dongping; Spencer, Michael G.

1991-01-01

The first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.

Flammable gas program topical report

International Nuclear Information System (INIS)

Johnson, G.D.

1996-01-01

The major emphasis of this report is to describe what has been learned about the generation, retention, and release of flammable gas mixtures in high-level waste tanks. A brief overview of efforts to characterize the gas composition will be provided. The report also discusses what needs to be learned about the phenomena, how the Unreviewed Safety Question will be closed, and the approach for removing tanks from the Watch List

Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF_2 gas

International Nuclear Information System (INIS)

Liebes-Peer, Yael; Bandalo, Vedran; Sökmen, Ünsal; Tornow, Marc; Ashkenasy, Nurit

2016-01-01

The emergent technology of using nanopores for stochastic sensing of biomolecules introduces a demand for the development of simple fabrication methodologies of nanopores in solid state membranes. This process becomes particularly challenging when membranes of composite layer architecture are involved. To overcome this challenge we have employed a focused electron beam induced chemical etching process. We present here the fabrication of nanopores in silicon-on-insulator based membranes in a single step process. In this process, chemical etching of the membrane materials by XeF_2 gas is locally accelerated by an electron beam, resulting in local etching, with a top membrane oxide layer preventing delocalized etching of the silicon underneath. Nanopores with a funnel or conical, 3-dimensional (3D) shape can be fabricated, depending on the duration of exposure to XeF_2, and their diameter is dominated by the time of exposure to the electron beam. The demonstrated ability to form high-aspect ratio nanopores in comparably thick, multi-layered silicon based membranes allows for an easy integration into current silicon process technology and hence is attractive for implementation in biosensing lab-on-chip fabrication technologies. (author)

Gas-Jet Meniscus Control in Ribbon Growth

Science.gov (United States)

Zoutendyk, J. A.; Vonroos, O.

1983-01-01

Gas jet used to control shape of meniscus and thus to regulate ribbon thickness in vertical silicon-ribbon growth. Gas jet also cools ribbon, increasing maximum possible pull speed for silicon, contact angle of 11 degrees plus or minus 1 degree required for constant thickness ribbon growth. Cooling effect of gas jet increases maximum possible pull speed.

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

Science.gov (United States)

Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

2018-06-01

A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

Plasma jet array treatment to improve the hydrophobicity of contaminated HTV silicone rubber

Science.gov (United States)

Zhang, Ruobing; Han, Qianting; Xia, Yan; Li, Shuang

2017-10-01

An atmospheric-pressure plasma jet array specially designed for HTV silicone rubber treatment is reported in this paper. Stable plasma containing highly energetic active particles was uniformly generated in the plasma jet array. The discharge pattern was affected by the applied voltage. The divergence phenomenon was observed at low gas flow rate and abated when the flow rate increased. Temperature of the plasma plume is close to room temperature which makes it feasible for temperature-sensitive material treatment. Hydrophobicity of contaminated HTV silicone rubber was significantly improved after quick exposure of the plasma jet array, and the effective treatment area reached 120 mm × 50 mm (length × width). Reactive particles in the plasma accelerate accumulation of the hydrophobic molecules, namely low molecular weight silicone chains, on the contaminated surface, which result in a hydrophobicity improvement of the HTV silicone rubber.

Energy and exergy analysis of the silicon production process

International Nuclear Information System (INIS)

Takla, M.; Kamfjord, N.E.; Tveit, Halvard; Kjelstrup, S.

2013-01-01

We used energy and exergy analysis to evaluate two industrial and one ideal (theoretical) production process for silicon. The industrial processes were considered in the absence and presence of power production from waste heat in the off-gas. The theoretical process, with pure reactants and no side-reactions, was used to provide a more realistic upper limit of performance for the others. The energy analysis documented the large thermal energy source in the off-gas system, while the exergy analysis documented the potential for efficiency improvement. We found an exergetic efficiency equal to 0.33 ± 0.02 for the process without power production. The value increased to 0.41 ± 0.03 when waste heat was utilized. For the ideal process, we found an exergetic efficiency of 0.51. Utilization of thermal exergy in an off-gas of 800 °C increased this exergetic efficiency to 0.71. Exergy destructed due to combustion of by-product gases and exergy lost with the furnace off-gas were the largest contributors to the thermodynamic inefficiency of all processes. - Highlights: • The exergetic efficiency for an industrial silicon production process when silicon is the only product was estimated to 0.33. • With additional power production from thermal energy in the off-gas we estimated the exergetic efficiency to 0.41. • The theoretical silicon production process is established as the reference case. • Exergy lost with the off-gas and exergy destructed due to combustion account for roughly 75% of the total losses. • With utilization of the thermal exergy in the off-gas at a temperature of 800 °C the exergetic efficiency was 0.71

Case Report: Magnetically retained silicone facial prosthesis ...

African Journals Online (AJOL)

Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention. Key words: Magnet ...

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

Science.gov (United States)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

Natural gas for New Brunswick: First report

International Nuclear Information System (INIS)

1998-01-01

The development of the gas field off Sable Island and the imminent construction of a gas pipeline which will deliver natural gas to New Brunswick has prompted a thorough examination of energy-related issues in the province. This report presents the findings of the provincial energy committee which examined the implications of the arrival of natural gas to the province. The committee held a series of public hearings and consultations, and also received written submissions. After a historical perspective on natural gas as an energy source in the province and a review of the gas industry participants and their interests, the report discusses such issues as gas pipeline economics, local distribution company operations, infrastructure development, the regulatory framework, energy market competition, regional price equity, development of in-province gas sources, pipeline access, pipeline laterals and expansions, establishment of gas distribution franchises, municipal involvement in gas development, the impact of gas industry development on electric utility restructuring, and the environmental benefits of natural gas. Finally, recommendations are made regarding how natural gas should be regulated and distributed

Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts

Directory of Open Access Journals (Sweden)

Jin-Seok Lee

2012-01-01

Full Text Available In order to obtain optimum growth conditions for desired thickness and more effective silicon feedstock usage, effects of processing parameters such as preheated substrate temperatures, time intervals, moving velocity of substrates, and Ar gas blowing rates on silicon ribbon thickness were investigated in the horizontal growth process. Most of the parameters strongly affected in the control of ribbon thickness with columnar grain structure depended on the solidification rate. The thickness of the silicon ribbon decreased with an increasing substrate temperature, decreasing time interval, and increasing moving velocity of the substrate. However, the blowing of Ar gas onto a liquid layer existing on the surface of solidified ribbon contributed to achieving smooth surface roughness but did not closely affect the change of ribbon thickness in the case of a blowing rate of ≥0.65 Nm3/h because the thickness of the solidified layer was already determined by the exit height of the reservoir.

Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas

Science.gov (United States)

Horita, Susumu; Jain, Puneet

2018-03-01

We investigated the dependences of the deposition rate and residual OH content of SiO2 films on the concentration of trichloroethylene (TCE), which was added during deposition at low temperatures of 160-260 °C with the reactant gases of silicone oil (SO) and O3. The deposition rate depends on the TCE concentration and is minimum at a concentration of ˜0.4 mol/m3 at 200 °C. The result can be explained by surface and gas-phase reactions. Experimentally, we also revealed that the thickness profile is strongly affected by gas-phase reaction, in which the TCE vapor was blown directly onto the substrate surface, where it mixed with SO and O3. Furthermore, it was found that adding TCE vapor reduces residual OH content in the SiO2 film deposited at 200 °C because TCE enhances the dehydration reaction.

Vacuum die casting of silicon sheet for photovoltaic applications. First quarterly report, March 16-June 30, 1979

Energy Technology Data Exchange (ETDEWEB)

None

1979-01-01

The obtective of this program is to develop a vacuum die-casting process for producing silicon sheet suitable for photovoltaic cells and to develop production techniques for optimization of polycrystallie silicon solar cell output. Efforts will examine process methods which are directed toward minimum cost processing of silicon into a quality suitable for producing solar cells with a terrestrial efficiency greater than 12% and having the potential to be scaled for large quantity production. In the vacuum die casting technique, silicon is melted under vacuum, and an evacuated die with a thin rectangular cavity is inserted into the melt. Liquid silicon is then injected into the die using a positive pressure of an inert gas. The major portion of the die casting work will be performed at Stanford Research Institute International under subcontract. The initial approach will follow parallel tracks: (1) obtain mechanical design parameters by using boron nitride, which has been shown to be non-wetting to silicon; (2) optimize silicon nitride material composition and coatings by sessile drop experiments; (3) test effectiveness of fluoride salt interfacial media with a graphite mold; and (4) test effect of surface finish using both boron nitride and graphite. Having established the material and mechanical boundary conditions, a finalized version of the prototype assembly will be constructed and the casting varibles determined. Polycrystalline silicon solar cells, with and without impurities, will be fabricated, characterized, and optimized at ARCCO Solar. The major activities will focus on the use of Wacker SILCO, HEM and in-house materials until vacuum die cast wafers are available. A baseline process with vacuum metallized contacts will be established and a reference mass production process with screen-printed metallization and high-throughput diffusions will also be obtained.

Silicon Photonics Cloud (SiCloud)

DEFF Research Database (Denmark)

DeVore, P. T. S.; Jiang, Y.; Lynch, M.

2015-01-01

Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

Framing scenarios of electricity generation and gas use: EPRI report series on gas demands for power generation. Final report

International Nuclear Information System (INIS)

Thumb, S.; Glover, W.; Hughes, W.R.

1996-07-01

Results of three EPRI projects have been combined to analyze power industry consumption of gas and other generating fuels. The report's capstone is a scenario analysis of power industry generation and fuel consumption. The Utility Fuel Consumption Model (UFCM), developed for the project, predicts generating capacity and generation by region and fuel through 2015, based on load duration curves, generation dispatch, and expected capacity additions. Scenarios embody uncertain factors, such as electricity demand growth, fuel switching, coal-gas competition, the merit order of gas-coal dispatch, and retirement of nuclear units, that substantially affect gas consumption. Some factors, especially electricity demand have very large effects. The report includes a consistent database on NUG (non-utility generation) capacity and generation and assesses historical and prospective trends in NUG generation. The report shows that NUG capacity growth will soon decline substantially. The study assesses industry capability for price-induced fuel switching from gas to oil and coal, documenting conversions of coal units to dual coal-gas capability and determining that gas-to-oil switching remains a strong influence on fuel availability and gas prices, though regulation and taxation have increased trigger prices for switching. 61 tabs

Simple Stacking Methods for Silicon Micro Fuel Cells

Directory of Open Access Journals (Sweden)

Gianmario Scotti

2014-08-01

Full Text Available We present two simple methods, with parallel and serial gas flows, for the stacking of microfabricated silicon fuel cells with integrated current collectors, flow fields and gas diffusion layers. The gas diffusion layer is implemented using black silicon. In the two stacking methods proposed in this work, the fluidic apertures and gas flow topology are rotationally symmetric and enable us to stack fuel cells without an increase in the number of electrical or fluidic ports or interconnects. Thanks to this simplicity and the structural compactness of each cell, the obtained stacks are very thin (~1.6 mm for a two-cell stack. We have fabricated two-cell stacks with two different gas flow topologies and obtained an open-circuit voltage (OCV of 1.6 V and a power density of 63 mW·cm−2, proving the viability of the design.

Gas-temperature control in VHF- PECVD process for high-rate (>5 nm/s) growth of microcrystalline silicon thin films

Energy Technology Data Exchange (ETDEWEB)

Sobajima, Yasushi; Higuchi, Takuya; Chantana, Jakapan; Toyama, Toshihiko; Sada, Chitose; Matsuda, Akihisa; Okamoto, Hiroaki [Graduate School of Engineering Science, Osaka University, Toyonaka City (Japan)

2010-04-15

Surface-heating phenomenon by the radiation from high density plasma during growth of microcrystalline silicon ({mu}c-Si:H) thin films at high rate (> 5 nm/sec) is one of the crucial issues to be solved for obtaining high quality intrinsic-layer material for solar cells. We have utilized an optical emission spectroscopy (OES) in the plasma to observe the time evolution of gas temperature during film growth as well as the film-growth rate under {mu}c-Si:H deposition conditions at high rate. Gas temperature has been successfully controlled by changing total flow rate of monosilane (SiH{sub 4})/hydrogen (H{sub 2}) gas mixture, leading to a drastic improvement of optoelectronic properties in the resulting {mu}c-Si:H. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Final report. Fabrication of silicon carbide/silicon nitride nanocomposite materials and characterization of their performance; Herstellung von Siliciumcarbid/Siliciumnitrid-Nanocomposite-Werkstoffen und Charakterisierung ihrer Leistungsfaehigkeit. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Westerheide, R.; Woetting, G.; Schmitz, H.W.

1998-07-01

The presented activities were initiated by the well known publications of Niihara and Ishizaki. There, the strengthening and toughening of silicon nitride by nanoscaled silicon carbide particles are described. Both authors have used expensive powder production routes to achieve the optimum mechanical properties. However, for a commercial purpose these routes are not applicable due to their high cost and low reproducibility. The production route chosen by H.C. Starck together with CFI and the Fraunhofer-Institute is a powder synthesis based on the carbothermal reaction of silicon nitride as a low cost synthesis method. The investigations were performed for materials made from synthesis powders and other reference materials. The materials were densified with relatively high amounts of conventional sintering additives by gas pressure sintering. It is shown, that the postulated maxima of strength and fracture toughness behaviour at room temperature with maxima at about 5% to 25% nanoscaled SiC cannot be achieved. However, the mechanical high temperature material behaviour is as good as the behaviour of highly developed silicon nitride materials, which are produced by HIP or by consequent minimisation of the additive content with the well known difficulties to densify these materials. An overview will be given here on the powder production route and their specific problems, the mechanical properties, the microstructure and the possible effects of the microstructure, which result in an improvement of the creep resistance. (orig.)

US crude oil, natural gas, and natural gas liquids reserves: 1990 annual report

International Nuclear Information System (INIS)

1991-09-01

The primary focus of this report is to provide an accurate estimate of US proved reserves of crude oil, natural gas, and natural gas liquids. These estimates were considered essential to the development, implementation, and evaluation of natural energy policy and legislation. In the past, the government and the public relied upon industry estimates of proved reserves. These estimates were prepared jointly by the American Petroleum Institute (API) and the American Gas Association (AGA) and published in their annual report, Reserves of Crude Oil, Natural Gas Liquids, and Natural Gas in the United States and Canada. However, API and AGA ceased publication of reserves estimates after their 1979 report. By the mid-1970's, various federal agencies had separately established programs to collect data on, verify, or independently estimate domestic proved reserves of crude oil or natural gas. Each program was narrowly defined to meet the particular needs of the sponsoring agency. In response to recognized need for unified, comprehensive proved reserves estimates, Congress in 1977 required the Department of Energy to prepare such estimates. To meet this requirement, the EIA's reserves program was undertaken to establish a unified, verifiable, comprehensive, and continuing statistical series for proved reserves of crude oil and natural gas. The program was expanded to include proved reserves of natural gas liquids in the 1979 report. 36 refs., 11 figs., 16 tabs

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Hydrogenated amorphous silicon-selenium alloys - a short journey through parameter space

International Nuclear Information System (INIS)

Al-Dallal, S.; Al-Alawi, S.M.; Aljishi, S.

1999-01-01

Hydrogenated amorphous silicon-selenium alloy thin films were grown by capacity coupled radio frequency glow discharge decomposition of (SiH/sub 4/ + He) and (H/sub 2/S + He) gas mixtures. In this work we report on a study to correlate the deposition parameters of a-Si, Se:H thin films with its optical, electronic and spectroscopic properties. The alloy composition was varied by changing the gas volume ratio R/sub v/ = [H/sub 2/Se]/[SiH/sub 4/]. The films are characterized via infrared spectroscopy, photoconductivity, photoluminescence, constant current method and conductivity measurements. (author)

The CMS silicon strip tracker

International Nuclear Information System (INIS)

Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Bartalini, P.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Raffaelli, F.; Raso, G.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Wang, Y.; Watts, S.; Wittmer, B.

1999-01-01

The Silicon Strip Tracker (SST) is the intermediate part of the CMS Central Tracker System. SST is based on microstrip silicon devices and in combination with pixel detectors and the Microstrip Gas Chambers aims at performing pattern recognition, track reconstruction and momentum measurements for all tracks with p T ≥2 GeV/c originating from high luminosity interactions at √s=14 TeV at LHC. We aim at exploiting the advantages and the physics potential of the precise tracking performance provided by the microstrip silicon detectors on a large scale apparatus and in a much more difficult environment than ever. In this paper we describe the actual SST layout and the readout system. (author)

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

International Nuclear Information System (INIS)

Wang, Yongjin; Sasaki, Takashi; Wu, Tong; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl 2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform.

Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

Science.gov (United States)

Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

2009-09-01

In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

MIS gas sensors based on porous silicon with Pd and WO{sub 3}/Pd electrodes

Energy Technology Data Exchange (ETDEWEB)

Solntsev, V.S. [Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028, Kiev (Ukraine); Gorbanyuk, T.I., E-mail: tatyanagor@mail.r [Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028, Kiev (Ukraine); Litovchenko, V.G.; Evtukh, A.A. [Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028, Kiev (Ukraine)

2009-09-30

Pd and WO{sub 3}/Pd gate metal-oxide-semiconductor (MIS) gas sensitive structures based on porous silicon layers are studied by the high frequency C(V) method. The chemical compositions of composite WO{sub 3}/Pd electrodes are characterized by secondary-ion mass spectrometry (SIMS). The atomic force microscopy (AFM) was used for morphologic studies of WO{sub 3}/Pd films. As shown in the experiments, WO{sub 3}/Pd structures are more sensitive and selective to the adsorption of hydrogen sulphide compared to Pd gate. The analyses of kinetic characteristics allow us to determine the response and characteristic times for these structures. The response time of MIS-structures with thin composite WO{sub 3}/Pd electrodes (the thickness of Pd is about 50 nm with WO{sub 3} clusters on its surface) is slower compared to the structures with Pd electrodes. Slower sensor responses of WO{sub 3}-based gas sensors may be associated with different mechanism of gas sensitivity of given structures. The enhanced sensitivity and selectivity to H{sub 2}S action of WO{sub 3}/Pd MIS-structures can also be explained by the chemical reaction that occurs at the catalytic active surface of gate electrodes. The possible mechanisms of enhanced sensitivity and selectivity to H{sub 2}S adsorption of MIS gas sensors with WO{sub 3}/Pd composite gate electrodes compared to pure Pd have been analyzed.

4. report of study group 6.3. Gas for transportation - gas vehicles

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-07-01

The report at hand has been compiled by the International Gas Union Study Group 6.3, which included representatives of 12 different countries. Currently there are about 5.5 million gas vehicles in the world. Of the world vehicle population, that equals less than 1 %. However, just recently in many countries there seem to be new, very rapid developments regarding gas vehicles, as both local and national governments are becoming increasingly aware of exhaust emissions, energy efficiency and security, and the possibilities offered by alternative fuels. This report is intended to give examples and ideas for the gas industry regarding business opportunities in the transportation sector. The principal goal of the report is to provide the reader a thorough picture of the current state-of-the art technology and development trends regarding use of gaseous fuels in the road transportation sector. Thus, the report includes information on technical topics such as different gases, engines, fuel systems, vehicles, and refueling infrastructure. It also addresses the market situation, including legislative and fiscal issues as well as customer awareness issues. The ideas and future prospects, which are compiled in the outlook and conclusion sections, present business opportunities for the participation of the gas industry as an energy provider in the transportation sector. (author)

Recent results from the chemistry of recoiling carbon and silicon atoms: The interplay between hot atom chemistry and gas kinetics

International Nuclear Information System (INIS)

Gaspar, P.P.; Garmestani, K.; Ferrieri, R.A.; Wolf, A.P.

1990-01-01

Recent results from the chemistry of recoiling carbon and silicon atoms illustrate the power of an experimental approach to the solution of complex mechanistic problems that combines the study of the reactions of recoiling atoms with conventional gas kinetic techniques. Included will be the reactions of 11 C atoms with anisole, addressing the question whether an aromatic pi-electron system can compete as a reactive site with carbon-hydrogen bonds

Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

Energy Technology Data Exchange (ETDEWEB)

Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

1999-11-11

AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

US crude oil, natural gas, and natural gas liquids reserves 1996 annual report

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-12-01

The EIA annual reserves report series is the only source of comprehensive domestic proved reserves estimates. This publication is used by the Congress, Federal and State agencies, industry, and other interested parties to obtain accurate estimates of the Nation`s proved reserves of crude oil, natural gas, and natural gas liquids. These data are essential to the development, implementation, and evaluation of energy policy and legislation. This report presents estimates of proved reserves of crude oil, natural gas, and natural gas liquids as of December 31, 1996, as well as production volumes for the US and selected States and State subdivisions for the year 1996. Estimates are presented for the following four categories of natural gas: total gas (wet after lease separation), nonassociated gas and associated-dissolved gas (which are the two major types of wet natural gas), and total dry gas (wet gas adjusted for the removal of liquids at natural gas processing plants). In addition, reserve estimates for two types of natural gas liquids, lease condensate and natural gas plant liquids, are presented. Also included is information on indicated additional crude oil reserves and crude oil, natural gas, and lease condensate reserves in nonproducing reservoirs. A discussion of notable oil and gas exploration and development activities during 1996 is provided. 21 figs., 16 tabs.

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

International Nuclear Information System (INIS)

Kukushkin, S A; Osipov, A V

2017-01-01

The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)

Systemic Sclerosis and Silicone Breast Implant: A Case Report and Review of the Literature

Directory of Open Access Journals (Sweden)

Antonios Psarras

2014-01-01

Full Text Available Environmentally induced systemic sclerosis is a well-recognized condition, which is correlated with exposure to various chemical compounds or drugs. However, development of scleroderma-like disease after exposure to silicone has always been a controversial issue and, over time, it has triggered spirited debate whether there is a certain association or not. Herein, we report the case of a 35-year-old female who developed Raynaud’s phenomenon and, finally, systemic sclerosis shortly after silicone breast implantation surgery.

Integrated Microfluidic Gas Sensors for Water Monitoring

Science.gov (United States)

Zhu, L.; Sniadecki, N.; DeVoe, D. L.; Beamesderfer, M.; Semancik, S.; DeVoe, D. L.

2003-01-01

A silicon-based microhotplate tin oxide (SnO2) gas sensor integrated into a polymer-based microfluidic system for monitoring of contaminants in water systems is presented. This device is designed to sample a water source, control the sample vapor pressure within a microchannel using integrated resistive heaters, and direct the vapor past the integrated gas sensor for analysis. The sensor platform takes advantage of novel technology allowing direct integration of discrete silicon chips into a larger polymer microfluidic substrate, including seamless fluidic and electrical interconnects between the substrate and silicon chip.

Indentation fatigue in silicon nitride, alumina and silicon carbide ...

Indian Academy of Sciences (India)

Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

Silicon Web Process Development. [for solar cell fabrication

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Hopkins, R. H.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

1979-01-01

Silicon dendritic web, ribbon form of silicon and capable of fabrication into solar cells with greater than 15% AMl conversion efficiency, was produced from the melt without die shaping. Improvements were made both in the width of the web ribbons grown and in the techniques to replenish the liquid silicon as it is transformed to web. Through means of improved thermal shielding stress was reduced sufficiently so that web crystals nearly 4.5 cm wide were grown. The development of two subsystems, a silicon feeder and a melt level sensor, necessary to achieve an operational melt replenishment system, is described. A gas flow management technique is discussed and a laser reflection method to sense and control the melt level as silicon is replenished is examined.

Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

Science.gov (United States)

Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

1979-01-01

A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

International Nuclear Information System (INIS)

Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

2007-01-01

The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

Gas in Europe: a special report

International Nuclear Information System (INIS)

Ballay, U.; Griffiths, M.; Campbell, N.; Nielsen, H.H.; Quinlan, M.; Mollet, P.

1996-01-01

This special report looks at the natural gas industry in various European countries in six separate articles. Increasing demand in the commercial and domestic markets for natural gas suggests that the industry in east Germany is likely to boom. The sale of shares in Hungary's gas distribution companies is seen as a success, despite some early difficulties. Foreign companies are likely to be attracted to invest in the Czech Republic's regional gas distribution companies after their privatisation this summer. Norway expects to enjoy further expansion in the gas industry following Europe wide liberalisation. Gas demand in Italy is likely to rise by fifty per cent over the next five years. Differing rates of expansion in the Netherlands and Belgian gas industries are noted. Finally, the Scandinavian power generation market is likely to increase its use of gas due to environmental imperatives and economic efficiency. (UK)

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

Science.gov (United States)

Ingle, W. M.; Thompson, S. W.; Chaney, R. E. (Inventor)

1979-01-01

A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

Axillary silicone lymphadenopathy presenting with a lump and altered sensation in the breast: a case report

Directory of Open Access Journals (Sweden)

Adams Simon T

2009-03-01

Full Text Available Abstract Introduction Silicone lymphadenopathy is a rare but recognised complication of procedures involving the use of silicone. It has a poorly understood mechanism but is thought to occur following the transportation of silicone particles from silicone-containing prostheses to lymph nodes by macrophages. Case presentation We report of a case involving a 35-year-old woman who presented to the breast clinic with a breast lump and altered sensation below her left nipple 5 years after bilateral cosmetic breast augmentations. A small lump was detected inferior to the nipple but clinical examination and initial ultrasound investigation showed both implants to be intact. However, mammography and magnetic resonance imaging of both breasts revealed both intracapsular and extracapsular rupture of the left breast prosthesis. The patient went on to develop a flu-like illness and tender lumps in the left axilla and right mastoid regions. An excision biopsy of the left axillary lesion and replacement of the ruptured implant was performed. Subsequent histological analysis showed that the axillary lump was a lymph node containing large amounts of silicone. Conclusion The exclusion of malignancy remains the priority when dealing with lumps in the breast or axilla. Silicone lymphadenopathy should however be considered as a differential diagnosis in patients in whom silicone prostheses are present.

Non-agglomerated silicon nanoparticles on (0 0 1) silicon substrate formed by PLA and their photoluminescence properties

International Nuclear Information System (INIS)

Du Jun; Tu Hailing; Wang Lei

2009-01-01

In this work, non-agglomerated silicon nanoparticles formed on Si(0 0 1) substrate were synthesized by pulsed laser ablation (PLA) and their photoluminescence (PL) properties were studied. The controllable parameters in PLA process include mainly pulsed laser energy, target-to-substrate distance and buffer gas pressure. In particular, the effect of buffer gas pressure on the formation of non-agglomerated and size-controlled silicon nanoparticles has been discussed. The results show that non-agglomerated and size-controlled silicon nanoparticles can be fabricated with particle size in the range of 2-10 nm when Ar buffer gas pressure was varied from 50 to 10 Pa. Most of these nanoparticles are in form of single crystal with less surface oxidation in the as-deposited samples. The PL peak positions are located at 581-615 nm for Si nanoparticles with size of 2-10 nm. When exposed to air for up to 60 days, the core/shell structure of Si nanoparticles would be formed, which in turn could be responsible for the blue shift of PL peak position. Pt noble metal coating has passivation effect for surface stabilization of Si nanoparticles and shows relatively satisfied time-stability of PL intensity. These results suggest that the Si nanoparticles prepared by PLA have a large potential for the fabrication of optically active photonic devices based on the Si technology.

Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

Science.gov (United States)

Pramann, Axel; Rienitz, Olaf

2016-06-07

A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

Natural gas imports and exports. Second quarter report

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-12-31

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports summarizing the data provided by companies authorized to import or export natural gas. Companies are required, as a condition of their authorizations, to file quarterly reports. This report is for the second quarter of 1997 (April through June).

Preliminary report on the economics of gas production from natural gas hydrates

International Nuclear Information System (INIS)

Walsh, M.; Wilson, S.; Patil, S.; Moridis, G.; Boswell, R.; Koh, C.; Sloan, D.

2008-01-01

Gas hydrates are solid crystalline compounds in which gas molecules reside inside cages that are formed by hydrogen-bonded water molecules in a crystal lattice. At particularly low temperatures and high pressures, a guest molecule will combine with water to form gas hydrates. Gas hydrates are found in two different settings in which the temperature and pressure conditions are suitable for their existence, notably in Arctic permafrost regions and below the seafloor. Because of the size of this possible future resource, if any of the gas in hydrates can be proven to be economically recoverable, then production from gas hydrates could become an important portion of the world's energy portfolio as demand for natural gas increases along with the technology to compress and distribute natural gas to distant markets. This paper presented a compilation of economic research that was conducted on the resource potential of gas hydrates. The paper reported a preliminary estimate of the price of natural gas that may lead to economically-viable production from North American Arctic region hydrates. The paper also discussed the implications of a recent study on the production of class 3 marine hydrate deposits from the Gulf of Mexico. The state of the art technologies and methods in hydrate reservoir modeling and hydrate reservoir production and petrophysical testing were also discussed. It was concluded that the somewhat optimistic results presented in this report should be interpreted with caution, however, the economically-viable gas production from hydrates was not an unreasonable scenario. 23 refs., 2 tabs., 10 figs

Natural gas imports and exports, first quarter report 2000

Energy Technology Data Exchange (ETDEWEB)

None

2000-06-01

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports showing natural gas import and export activity. Companies are required to file quarterly reports. Attachments show the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the 5 most recent reporting quarters, volumes and prices of gas purchased by long-term importers and exporters during the past 12 months, volume and price data for gas imported on a short-term or spot market basis, and the gas exported on a short-term or spot market basis to Canada and Mexico.

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Femtosecond laser irradiation-induced infrared absorption on silicon surfaces

Directory of Open Access Journals (Sweden)

Qinghua Zhu

2015-04-01

Full Text Available The near-infrared (NIR absorption below band gap energy of crystalline silicon is significantly increased after the silicon is irradiated with femtosecond laser pulses at a simple experimental condition. The absorption increase in the NIR range primarily depends on the femtosecond laser pulse energy, pulse number, and pulse duration. The Raman spectroscopy analysis shows that after the laser irradiation, the silicon surface consists of silicon nanostructure and amorphous silicon. The femtosecond laser irradiation leads to the formation of a composite of nanocrystalline, amorphous, and the crystal silicon substrate surface with microstructures. The composite has an optical absorption enhancement at visible wavelengths as well as at NIR wavelength. The composite may be useful for an NIR detector, for example, for gas sensing because of its large surface area.

MOS structures containing silicon nanoparticles for memory device applications

International Nuclear Information System (INIS)

Nedev, N; Zlatev, R; Nesheva, D; Manolov, E; Levi, Z; Brueggemann, R; Meier, S

2008-01-01

Metal-oxide-silicon structures containing layers with amorphous or crystalline silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiO x (x = 1.15) and RF sputtering of SiO 2 on n-type crystalline silicon, followed by high temperature annealing in an inert gas ambient. Depending on the annealing temperature, 700 deg. C or 1000 deg. C, amorphous or crystalline silicon nanoparticles are formed in the silicon oxide matrix. The annealing process is used not only for growing nanoparticles but also to form a dielectric layer with tunnelling thickness at the silicon/insulator interface. High frequency C-V measurements demonstrate that both types of structures can be charged negatively or positively by applying a positive or negative voltage on the gate. The structures with amorphous silicon nanoparticles show several important advantages compared to the nanocrystal ones, such as lower defect density at the interface between the crystalline silicon wafer and the tunnel silicon oxide, better retention characteristics and better reliability

U.S. crude oil, natural gas, and natural gas liquids reserves 1995 annual report

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-11-01

The EIA annual reserves report series is the only source of comprehensive domestic proved reserves estimates. This publication is used by the Congress, Federal and State agencies, industry, and other interested parties to obtain accurate estimates of the Nation`s proved reserves of crude oil, natural gas, and natural gas liquids. These data are essential to the development, implementation, and evaluation of energy policy and legislation. This report presents estimates of proved reserves of crude oil, natural gas, and natural gas liquids as of December 31, 1995, as well as production volumes for the US and selected States and State subdivisions for the year 1995. Estimates are presented for the following four categories of natural gas: total gas (wet after lease separation), nonassociated gas and associated-dissolved gas (which are the two major types of wet natural gas), and total dry gas (wet gas adjusted for the removal of liquids at natural gas processing plants). In addition, reserve estimates for two types of natural gas liquids, lease condensate and natural gas plant liquids, are presented. Also included is information on indicated additional crude oil reserves and crude oil, natural gas, and lease condensate reserves in nonproducing reservoirs. A discussion of notable oil and gas exploration and development activities during 1995 is provided. 21 figs., 16 tabs.

A Mechanochemical Approach to Porous Silicon Nanoparticles Fabrication

Directory of Open Access Journals (Sweden)

Luca De Stefano

2011-06-01

Full Text Available Porous silicon samples have been reduced in nanometric particles by a well known industrial mechanical process, the ball grinding in a planetary mill; the process has been extended to crystalline silicon for comparison purposes. The silicon nanoparticles have been studied by X-ray diffraction, infrared spectroscopy, gas porosimetry and transmission electron microscopy. We have estimated crystallites size from about 50 nm for silicon to 12 nm for porous silicon. The specific surface area of the powders analyzed ranges between 100 m2/g to 29 m2/g depending on the milling time, ranging from 1 to 20 h. Electron microscopy confirms the nanometric size of the particles and reveals a porous structure in the powders obtained by porous silicon samples which has been preserved by the fabrication conditions. Chemical functionalization during the milling process by a siloxane compound has also been demonstrated.

Development of a process for high capacity arc heater production of silicon for solar arrays

Science.gov (United States)

Meyer, T. N.

1980-01-01

A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

Flammable gas data evaluation. Progress report

International Nuclear Information System (INIS)

Whitney, P.D.; Meyer, P.A.; Miller, N.E.

1996-10-01

The Hanford Site is home to 177 large, underground nuclear waste storage tanks. Numerous safety and environmental concerns surround these tanks and their contents. One such concern is the propensity for the waste in these tanks to generate, retain, and periodically release flammable gases. This report documents some of the activities of the Flammable Gas Project Data Evaluation Task conducted for Westinghouse Hanford Company during fiscal year 1996. Described in this report are: (1) the results of examining the in-tank temperature measurements for insights into gas release behavior; (2) the preliminary results of examining the tank waste level measurements for insights into gas release behavior; and (3) an explanation for the observed hysteresis in the level/pressure measurements, a phenomenon observed earlier this year when high-frequency tank waste level measurements came on-line

Natural gas in the world - Cedigaz annual report

International Nuclear Information System (INIS)

Lecarpentier, A.

2010-01-01

The recent developments in gas E and P in the US with the huge ExxonMobil acquisition (41 Billion US $) of XTO Energy Inc and TOTAL's investment in Chesapeake Energy show if needed that the gas is more and more important in the world energy panorama. The new edition of the CEDIGAZ Annual Report is an indispensable tool for better knowledge of the international gas market. This report offers a compilation of the main statistical data in terms of reserves, gross and marketed production, the volume of international gas trade by pipe and by LNG Tanker, consumption, prices of the main contracts, new LNG Infrastructures in production, underground gas storage and so on

Movable MEMS Devices on Flexible Silicon

KAUST Repository

Ahmed, Sally

2013-05-05

Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS actuators and sensors can play critical role to extend the application areas of flexible electronics, fabricating movable MEMS devices on flexible substrates is highly challenging. Therefore, this thesis reports a process for fabricating free standing and movable MEMS devices on flexible silicon substrates; MEMS flexure thermal actuators have been fabricated to illustrate the viability of the process. Flexure thermal actuators consist of two arms: a thin hot arm and a wide cold arm separated by a small air gap; the arms are anchored to the substrate from one end and connected to each other from the other end. The actuator design has been modified by adding etch holes in the anchors to suit the process of releasing a thin layer of silicon from the bulk silicon substrate. Selecting materials that are compatible with the release process was challenging. Moreover, difficulties were faced in the fabrication process development; for example, the structural layer of the devices was partially etched during silicon release although it was protected by aluminum oxide which is not attacked by the releasing gas . Furthermore, the thin arm of the thermal actuator was thinned during the fabrication process but optimizing the patterning and etching steps of the structural layer successfully solved this problem. Simulation was carried out to compare the performance of the original and the modified designs for the thermal actuators and to study stress and temperature distribution across a device. A fabricated thermal actuator with a 250 μm long hot arm and a 225 μm long cold arm separated by a 3 μm gap produced a deflection of 3 μm before silicon release, however, the fabrication process must be optimized to obtain fully functioning

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

2017-03-15

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Utility of silicone filtering for diffusive model CO2 sensors in field experiments

Directory of Open Access Journals (Sweden)

Shinjiro Ohkubo

2013-05-01

Full Text Available Installing a diffusive model CO2 sensor in the soil is a direct and useful method to observe the time variation of gas CO2 concentration in soil. Furthermore, it requires no bulky measurement system. A hydrophobic silicone filter prevents water infiltration. Therefore, a sensor whose detection element is covered with a silicone filter can be durable in the field even when experiencing inundation (e.g. farmland with snow melting, wetland with varying water level. The utility of a diffusive model of CO2 sensor covered with silicone filter was examined in laboratory and field experiments. Applying the silicone filter delays the response to change in ambient CO2 concentration, which results from lower gas permeability than those of other conventionally used filters made of materials, such as polytetrafluoroethylene. Theoretically, apart from the precision of the sensor itself, diurnal variation of soil gas CO2 concentration is calculable from obtained series of data with a silicone-covered sensor with negligible error. The error is estimated at approximately 1% of the diurnal amplitude in most cases of a 10-min logging interval. Drastic changes that occur, such as those of a rainfall event, cause a larger gap separating calculated and real values. However, the proportion of this gap to the extent of the drastic increase was extremely small (0.43% for a 10-min logging interval. For accurate estimation, a smoothly varied data series must be prepared as input data. Using a moving average or applying a fitting curve can be useful when using a sensor or data logger with low resolution. Estimating the gas permeability coefficient is crucial for calculation. The gas permeability coefficient can be estimated through laboratory experiments. This study revealed the possibility of evaluating the time variation of soil gas CO2 concentration by installing a diffusive model of silicone-covered sensor in an inundated field.

Natural gas imports and exports. First quarter report, 1998

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-08-01

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports summarizing the data provided by companies authorized to import or export natural gas. Companies are required, as a condition of their authorizations, to file quarterly reports. This report is for the first quarter of 1998 (January through March). Attachment A shows the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent reporting quarters. Attachment B shows volumes and prices of gas purchased by long-term importers and exporters during the past 12 months. Attachment C shows volume and price information pertaining to gas imported on a short-term or spot market basis. Attachment D shows the gas exported on a short-term or spot market basis to Canada and Mexico.

Natural gas imports and exports. Fourth quarter report, 1998

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-12-31

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports summarizing the data provided by companies authorized to import or export natural gas. Companies are required, as a condition of their authorizations, to file quarterly reports. This report is for the fourth quarter of 1998 (October through December). Attachment A shows the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent reporting quarters. Attachment B shows volumes and prices of gas purchased by long-term importers and exporters during the past 12 months. Attachment C shows volume and price information pertaining to gas imported on a short-term or spot market basis. Attachment D shows the gas exported on a short-term or spot market basis to Canada and Mexico.

Natural gas imports and exports. Second quarter report, 1998

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-11-01

The Office of Natural Gas and Petroleum Import and Export Activities prepared quarterly reports summarizing the data provided by companies authorized to import or export natural gas. Companies are required, as a condition of their authorizations, to file quarterly reports. This report is for the second quarter of 1998 (April through June). Attachment A shows the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent reporting quarters. Attachment B shows volumes and prices of gas purchased by long-term importers and exporters during the past 12 months. Attachment C shows volume and price information pertaining to gas imported on a short-term or spot market basis. Attachment D shows the gas exported on a short-term or spot market basis to Canada and Mexico.

US crude oil, natural gas, and natural gas liquids reserves, 1992 annual report

Energy Technology Data Exchange (ETDEWEB)

1993-10-18

This report presents estimates of proved reserves of crude oil, natural gas, and natural gas liquids as of December 31, 1992, as well as production volumes for the United States, and selected States and State subdivisions for the year 1992. Estimates are presented for the following four categories of natural gas: total gas (wet after lease separation), its two major components (nonassociated and associated-dissolved gas), and total dry gas (wet gas adjusted for the removal of liquids at natural gas processing plants). In addition, two components of natural gas liquids, lease condensate and natural gas plant liquids, have their reserves and production data presented. Also included is information on indicated additional crude oil reserves and crude oil, natural gas, and lease condensate reserves in nonproducing reservoirs. A discussion of notable oil and gas exploration and development activities during 1992 is provided.

US crude oil, natural gas, and natural gas liquids reserves, 1992 annual report

International Nuclear Information System (INIS)

1993-01-01

This report presents estimates of proved reserves of crude oil, natural gas, and natural gas liquids as of December 31, 1992, as well as production volumes for the United States, and selected States and State subdivisions for the year 1992. Estimates are presented for the following four categories of natural gas: total gas (wet after lease separation), its two major components (nonassociated and associated-dissolved gas), and total dry gas (wet gas adjusted for the removal of liquids at natural gas processing plants). In addition, two components of natural gas liquids, lease condensate and natural gas plant liquids, have their reserves and production data presented. Also included is information on indicated additional crude oil reserves and crude oil, natural gas, and lease condensate reserves in nonproducing reservoirs. A discussion of notable oil and gas exploration and development activities during 1992 is provided

Thinning of Inner Retinal Layers after Vitrectomy with Silicone Oil versus Gas Endotamponade in Eyes with Macula-Off Retinal Detachment.

Science.gov (United States)

Purtskhvanidze, Konstantine; Hillenkamp, Jost; Tode, Jan; Junge, Olaf; Hedderich, Jürgen; Roider, Johann; Treumer, Felix

2017-01-01

To evaluate retinal layer thickness with optical coherence tomography (OCT) in eyes with macula-off retinal detachment after silicone oil (SiO) or gas endotamponade. Cross-sectional study of 40 eyes with macula-off rhegmatogenous retinal detachment that underwent vitrectomy. 20 eyes received SiO tamponade and 20 matched eyes received gas. 33 healthy fellow eyes served as controls. Macular spectral domain OCT was performed with automated layer detection in the 5 inner subfields of the Early Treatment Diabetic Retinopathy Study (ETDRS) map. Comparing the SiO group with the gas group, the ganglion cell layer showed a significant thinning in all fields of the inner ring of the ETDRS map, the inner plexiform layer in the nasal, superior and temporal quadrants, and the outer plexiform layer in the nasal quadrant. Inner retinal layers in the fovea/parafovea were significantly thinner in the SiO group. Prospective studies are warranted to further elucidate possible retinal adverse effects of SiO tamponade. © 2017 S. Karger AG, Basel.

Baffles Promote Wider, Thinner Silicon Ribbons

Science.gov (United States)

Seidensticker, Raymond G.; Mchugh, James P.; Hundal, Rolv; Sprecace, Richard P.

1989-01-01

Set of baffles just below exit duct of silicon-ribbon-growing furnace reduces thermal stresses in ribbons so wider ribbons grown. Productivity of furnace increased. Diverts plume of hot gas from ribbon and allows cooler gas from top of furnace to flow around. Also shields ribbon from thermal radiation from hot growth assembly. Ribbon cooled to lower temperature before reaching cooler exit duct, avoiding abrupt drop in temperature as entering duct.

Interstellar Silicon Depletion and the Ultraviolet Extinction

Science.gov (United States)

Mishra, Ajay; Li, Aigen

2018-01-01

Spinning small silicate grains were recently invoked to account for the Galactic foreground anomalous microwave emission. These grains, if present, will absorb starlight in the far ultraviolet (UV). There is also renewed interest in attributing the enigmatic 2175 Å interstellar extinction bump to small silicates. To probe the role of silicon in the UV extinction, we explore the relations between the amount of silicon required to be locked up in silicates [Si/H]dust and the 2175 Å bump or the far-UV extinction rise, based on an analysis of the extinction curves along 46 Galactic sightlines for which the gas-phase silicon abundance [Si/H]gas is known. We derive [Si/H]dust either from [Si/H]ISM - [Si/H]gas or from the Kramers- Kronig relation which relates the wavelength-integrated extinction to the total dust volume, where [Si/H]ISM is the interstellar silicon reference abundance and taken to be that of proto-Sun or B stars. We also derive [Si/H]dust from fi�tting the observed extinction curves with a mixture of amorphous silicates and graphitic grains. We fi�nd that in all three cases [Si/H]dust shows no correlation with the 2175 Å bump, while the carbon depletion [C/H]dust tends to correlate with the 2175 Å bump. This supports carbon grains instead of silicates as the possible carrier of the 2175 Å bump. We also �find that neither [Si/H]dust nor [C/H]dust alone correlates with the far-UV extinction, suggesting that the far-UV extinction is a combined effect of small carbon grains and silicates.

Lithographically fabricated silicon microreactor for in situ characterization of heterogeneous catalysts—Enabling correlative characterization techniques

Energy Technology Data Exchange (ETDEWEB)

Baier, S.; Rochet, A.; Hofmann, G. [Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology, D-76131 Karlsruhe (Germany); Kraut, M. [Institute for Micro Process Engineering, Karlsruhe Institute of Technology, D-76344 Eggenstein-Leopoldshafen (Germany); Grunwaldt, J.-D., E-mail: grunwaldt@kit.edu [Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology, D-76131 Karlsruhe (Germany); Institute of Catalysis Research and Technology, Karlsruhe Institute of Technology, D-76344 Eggenstein-Leopoldshafen (Germany)

2015-06-15

We report on a new modular setup on a silicon-based microreactor designed for correlative spectroscopic, scattering, and analytic on-line gas investigations for in situ studies of heterogeneous catalysts. The silicon microreactor allows a combination of synchrotron radiation based techniques (e.g., X-ray diffraction and X-ray absorption spectroscopy) as well as infrared thermography and Raman spectroscopy. Catalytic performance can be determined simultaneously by on-line product analysis using mass spectrometry. We present the design of the reactor, the experimental setup, and as a first example for an in situ study, the catalytic partial oxidation of methane showing the applicability of this reactor for in situ studies.

Shale gas: how to progress. Report July 2014

International Nuclear Information System (INIS)

Clamadieu, Jean-Pierre; Aubagnac, Louis-Paul; Dolle, Julie; Lahet, Jean-Francois; Goffe, Bruno; Le Bihan-Graf, Christine; Rosenblieh, Laure; Puyfaucher, Laetitia

2014-07-01

This report proposes a multidisciplinary contribution to the debate on shale gas. It first shows that shale gas is already a reality at the international level, that the American economy has improved its competitiveness with direct consequences for the European economy, and notices that some countries which have been reluctant until now, are now evolving. The second part describes the potential of shale gas in France as important but with still uncertain resources. The authors outline that a status-quo would be a threat for the French industry on the short term. Then, the report proposes answers to some questions raised by the exploitation of shale gas in France in terms of risks related to hydraulic fracturing, to water resources, to methane emissions, to organic volatile compounds present in drilling waters, or in terms of noise and visual pollutions. In its last part, the report discusses how to progress in the assessment of the role of shale gas in the French and European energy mix, in the knowledge of the French underground, in the development of shale gas at the service of competitiveness, and with an ensured progressive and controlled evolution

Emission of blue light from hydrogenated amorphous silicon carbide

Science.gov (United States)

Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

1994-04-01

THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

Sector report: Malaysia. Upstream oil and gas industry

International Nuclear Information System (INIS)

1997-01-01

This report is one of a series designed to introduce British exporters to the opportunities offered by the Malaysian market in oil and natural gas. The report includes Malaysia's oil and gas reserves, production, exploration, major profits upstream, production sharing contracts, pipeline construction, operators in production, service sector, and Petronas. (UK)

Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

2008-08-15

The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

Pulsed laser ablation of silicon with low laser fluence in a low-pressure of ammonia ambient

International Nuclear Information System (INIS)

Choo, Cheow-Keong; Tohara, Makoto; Enomoto, Kazuhiro; Tanaka, Katsumi

2004-01-01

Silicon was ablated by 532 nm wavelength of Nd:YAG laser in ammonia gas ambient. The influence of laser fluence and gas ambient pressures between 1.33x10 1 to 1.33x10 -5 Pa on the deposited compound was studied by in situ X-ray photoelectron spectroscopy and transmission Fourier transform infrared spectroscopy techniques. The results indicate that the deposited compound is composed of nonstoichiometric silicon nitride (SiN x , x=0-0.84). It has been shown that the composition of nitrogen to silicon is sensitive to the laser fluence; it increases with decreasing laser fluence. However, the ammonia gas ambient in these low pressures range had no influence on the composition of the deposited compound. The reaction of the ablated silicon with low-pressure ambient ammonia is proposed to be occurred on the substrate

Low cost silicon solar array project: Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon

Science.gov (United States)

Breneman, W. C.

1978-01-01

Silicon epitaxy analysis of silane produced in the Process Development Unit operating in a completely integrated mode consuming only hydrogen and metallurgical silicon resulted in film resistivities of up to 120 ohms cm N type. Preliminary kinetic studies of dichlorosilane disproportionation in the liquid phase have shown that 11.59% SiH4 is formed at equilibrium after 12 minutes contact time at 56 C. The fluid-bed reactor was operated continuously for 48 hours with a mixture of one percent silane in helium as the fluidizing gas. A high silane pyrolysis efficiency was obtained without the generation of excessive fines. Gas flow conditions near the base of the reactor were unfavorable for maintaining a bubbling bed with good heat transfer characteristics. Consequently, a porous agglomerate formed in the lower portion of the reactor. Dense coherent plating was obtained on the silicon seed particles which had remained fluidizied throughout the experiment.

Removal of inclusions from silicon

Science.gov (United States)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

Natural gas imports and exports: Third quarter report, 1998

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-12-31

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports summarizing the data provided by companies authorized to import or export natural gas. Companies are required, as a condition of their authorizations, to file quarterly reports. This report is for the third quarter of 1998 (July--September). Attachment A shows the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent calendar quarters. Attachment B shows volumes and prices of gas purchased by long-term importers and exporters during the past 12 months. Attachment C shows volume and price information pertaining to gas imported on a short-term or spot market basis. Attachment D shows the gas exported on a short-term or spot market basis to Canada and Mexico.

Natural gas imports and exports: First quarter report 1995

Energy Technology Data Exchange (ETDEWEB)

NONE

1995-07-01

The Office of Fuels Programs prepares quarterly reports summarizing the data provided by companies authorized to import or export natural gas. Companies are required, as a condition of their authorizations, to file quarterly reports with the OFP. This quarter`s focus is market penetration of gas imports into New England. Attachments show the following: % takes to maximum firm contract levels and weighted average per unit price for the long-term importers, volumes and prices of gas purchased by long-term importers and exporters, volumes and prices for gas imported on short-term or spot market basis, and gas exported short-term to Canada and Mexico.

Natural gas imports and exports, third quarter report 2000

Energy Technology Data Exchange (ETDEWEB)

None

2000-12-01

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports showing natural gas import and export activity. Companies are required to file quarterly reports. Attachments show the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the 5 most recent quarters, volumes and prices of gas purchased by long-term importers and exporters during the past 12 months, volume and price data for gas imported on a short-term or spot market basis, and the gas exported on a short-term or spot market basis to Canada and Mexico.

Natural gas imports and exports, fourth quarter report 1999

International Nuclear Information System (INIS)

None

2000-01-01

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports showing natural gas import and export activity. Companies are required to file quarterly reports. Attachments show the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent quarters, volumes and prices of gas purchased by long-term importers and exporters during the past 12 months, volume and price data for gas imported on a short-term or spot market basis, and the gas exported on a short-term or spot market basis to Canada and Mexico

Natural gas imports and exports, fourth quarter report 1999

Energy Technology Data Exchange (ETDEWEB)

None

2000-03-01

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports showing natural gas import and export activity. Companies are required to file quarterly reports. Attachments show the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent quarters, volumes and prices of gas purchased by long-term importers and exporters during the past 12 months, volume and price data for gas imported on a short-term or spot market basis, and the gas exported on a short-term or spot market basis to Canada and Mexico.

Natural gas imports and exports, third quarter report 2000

International Nuclear Information System (INIS)

None

2000-01-01

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports showing natural gas import and export activity. Companies are required to file quarterly reports. Attachments show the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the 5 most recent quarters, volumes and prices of gas purchased by long-term importers and exporters during the past 12 months, volume and price data for gas imported on a short-term or spot market basis, and the gas exported on a short-term or spot market basis to Canada and Mexico

Natural gas: Imports and exports third quarter report 1993

Energy Technology Data Exchange (ETDEWEB)

1993-12-31

The Office of Fuels Programs prepares quarterly reports summarizing the data provided by companies with authorizations to import or export natural gas. Companies are required, as a condition of their authorizations, to file quarterly reports with the OFP. This report is for the third quarter of 1993 (July--September). Attachment A shows the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent reporting quarters. Attachment B shows volumes and prices of gas purchased by long-term importers and exporters during the past twelve months (October 1992--September 1993). Attachment C shows volume and price information pertaining to gas imported on a short-term or spot market basis. Attachment D shows the gas exported on a short-term or spot market basis to Canada and Mexico.

Silicon-Based Nanoscale Composite Energetic Materials

Science.gov (United States)

2013-02-01

1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

75 FR 80685 - Contract Reporting Requirements of Intrastate Natural Gas Companies

Science.gov (United States)

2010-12-23

...; Order No. 735-A] Contract Reporting Requirements of Intrastate Natural Gas Companies Issued December 16... Storage Report for Intrastate Natural Gas and Hinshaw Pipelines. Order No. 735-A generally reaffirms the... reporting requirements for (1) intrastate natural gas pipelines \\2\\ providing interstate transportation...

Natural Gas Imports and Exports. Third Quarter Report 1999

International Nuclear Information System (INIS)

1999-01-01

The second quarter 1997 Quarterly Report of Natural Gas Imports and Exports featured a Quarterly Focus report on cross-border natural gas trade between the United States and Mexico. This Quarterly Focus article is a follow-up to the 1997 report. This report revisits and updates the status of some of the pipeline projects discussed in 1997, and examines a number of other planned cross-border pipeline facilities which were proposed subsequent to our 1997 report. A few of the existing and proposed pipelines are bidirectional and thus have the capability of serving either Mexico, or the United States, depending on market conditions and gas supply availability. These new projects, if completed, would greatly enhance the pipeline infrastructure on the U.S.-Mexico border and would increase gas pipeline throughput capacity for cross-border trade by more than 1 billion cubic feet (Bcf) per day. The Quarterly Focus is comprised of five sections. Section I includes the introduction as well as a brief historic overview of U.S./Mexican natural gas trade; a discussion of Mexico's energy regulatory structure; and a review of trade agreements and a 1992 legislative change which allows for her cross-border gas trade in North America. Section II looks at initiatives that have been taken by the Mexican Government since 1995to open its energy markets to greater competition and privatization. Section III reviews Mexican gas demand forecasts and looks at future opportunities for U.S. gas producers to supplement Mexico's indigenous supplies in order to meet the anticipated rapid growth in demand. Section IV examines the U.S.-Mexico natural gas trade in recent years. It also looks specifically at monthly import and export volumes and prices and identifies short-term trends in this trade. Finally, Section V reviews the existing and planned cross-border gas pipeline infrastructure. The section also specifically describes six planned pipelines intended to expand this pipeline network and

Natural Gas Imports and Exports. Third Quarter Report 1999

Energy Technology Data Exchange (ETDEWEB)

none

1999-10-01

The second quarter 1997 Quarterly Report of Natural Gas Imports and Exports featured a Quarterly Focus report on cross-border natural gas trade between the United States and Mexico. This Quarterly Focus article is a follow-up to the 1997 report. This report revisits and updates the status of some of the pipeline projects discussed in 1997, and examines a number of other planned cross-border pipeline facilities which were proposed subsequent to our 1997 report. A few of the existing and proposed pipelines are bidirectional and thus have the capability of serving either Mexico, or the United States, depending on market conditions and gas supply availability. These new projects, if completed, would greatly enhance the pipeline infrastructure on the U.S.-Mexico border and would increase gas pipeline throughput capacity for cross-border trade by more than 1 billion cubic feet (Bcf) per day. The Quarterly Focus is comprised of five sections. Section I includes the introduction as well as a brief historic overview of U.S./Mexican natural gas trade; a discussion of Mexico's energy regulatory structure; and a review of trade agreements and a 1992 legislative change which allows for her cross-border gas trade in North America. Section II looks at initiatives that have been taken by the Mexican Government since 1995to open its energy markets to greater competition and privatization. Section III reviews Mexican gas demand forecasts and looks at future opportunities for U.S. gas producers to supplement Mexico's indigenous supplies in order to meet the anticipated rapid growth in demand. Section IV examines the U.S.-Mexico natural gas trade in recent years. It also looks specifically at monthly import and export volumes and prices and identifies short-term trends in this trade. Finally, Section V reviews the existing and planned cross-border gas pipeline infrastructure. The section also specifically describes six planned pipelines intended to expand this pipeline

XII All-Russian conference on gas chromatography. Program. Summary of reports

International Nuclear Information System (INIS)

2002-01-01

Program and summary of reports of the XII All-Russian conference on gas chromatography are performed. The conference took place in Samara, 10-14 June, 2002. Reports on physicochemical regularities of gas chromatography, application of chromatographic methods in atomic energetics are included in the program of the conference. Part of the reports are deleted to the analytical application of the gas chromatography. Adsorbents for the gas chromatography, complex methods, mathematic methods in chromatography, ecological aspects of the gas chromatography [ru

From Modeling to Fabrication of Double Side Microstructured Silicon Windows for Infrared Gas Sensing in Harsh Environments

DEFF Research Database (Denmark)

Bergmann, René; Ivinskaya, Aliaksandra; Kafka, Jan Robert

2014-01-01

(∅1") were manufactured. The windows show high temperature resistant sub-wavelength anti-reflective surface microstructures on both side faces. Thus, a peak transmittance of 100% for a defined main wavelength (5 μm) and more than 90 % average transmittance for the wavelength range of 5-7 μm......Commercial infrared windows used for gas sensing in the mid-IR range usually possess an anti-reflective coating. Those coatings can normally not withstand harsh environments, particularly not high temperatures. With a simple “3-step” fabrication process, high temperature resistant silicon windows...... was achieved. The modeling of the anti-reflective microstructures, their fabrication process and final transmittance analysis of the windows is discussed....

U.S. crude oil, natural gas, and natural gas liquids reserves 1997 annual report

Energy Technology Data Exchange (ETDEWEB)

Wood, John H.; Grape, Steven G.; Green, Rhonda S.

1998-12-01

This report presents estimates of proved reserves of crude oil, natural gas, and natural gas liquids as of December 31, 1997, as well as production volumes for the US and selected States and State subdivisions for the year 1997. Estimates are presented for the following four categories of natural gas: total gas (wet after lease separation), nonassociated gas and associated-dissolved gas (which are the two major types of wet natural gas), and total dry gas (wet gas adjusted for the removal of liquids at natural gas processing plants). In addition, reserve estimates for two types of natural gas liquids, lease condensate and natural gas plant liquids, are presented. Also included is information on indicated additional crude oil reserves and crude oil, natural gas, and lease condensate reserves in nonproducing reservoirs. A discussion of notable oil and gas exploration and development activities during 1997 is provided. 21 figs., 16 tabs.

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 October 2003--30 September 2004

Energy Technology Data Exchange (ETDEWEB)

Wohlgemuth, J.; Narayanan, M.

2005-03-01

The major objectives of this program are to continue the advancement of BP Solar polycrystalline silicon manufacturing technology. The program includes work in the following areas: Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations; developing wire saws to slice 100- m-thick silicon wafers on 290- m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100- m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology; facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

Silicon Processors Using Organically Reconfigurable Techniques (SPORT)

Science.gov (United States)

2014-05-19

AFRL-OSR-VA-TR-2014-0132 SILICON PROCESSORS USING ORGANICALLY RECONFIGURABLE TECHNIQUES ( SPORT ) Dennis Prather UNIVERSITY OF DELAWARE Final Report 05...5a. CONTRACT NUMBER Silicon Processes for Organically Reconfigurable Techniques ( SPORT ) 5b. GRANT NUMBER FA9550-10-1-0363 5c...Contract: Silicon Processes for Organically Reconfigurable Techniques ( SPORT ) Contract #: FA9550-10-1-0363 Reporting Period: 1 July 2010 – 31 December

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation

International Nuclear Information System (INIS)

Makino, Toshiharu; Inada, Mitsuru; Umezu, Ikurou; Sugimura, Akira

2005-01-01

Pulsed laser ablation (PLA) in an inert background gas is a promising technique for preparing Si nanoparticles. Although an inert gas is appropriate for preparing pure material, a reactive background gas can be used to prepare compound nanoparticles. We performed PLA in hydrogen gas to prepare hydrogenated silicon nanoparticles. The mean diameter of the primary particles measured using transmission electron microscopy was approximately 5 nm. The hydrogen content in the deposits was very high and estimated to be about 20%. The infrared absorption corresponding to Si-H n (n = 1, 2, 3) bonds on the surface were observed at around 2100 cm -1 . The Raman scattering peak corresponding to crystalline Si was observed, and that corresponding to amorphous Si was negligibly small. These results indicate that the Si nanoparticles were not an alloy of Si and hydrogen but Si nanocrystallite (nc-Si) covered by hydrogen or hydrogenated amorphous silicon. This means that PLA in reactive H 2 gas is a promising technique for preparing surface passivated nc-Si. The deposition mechanism and optical properties of the surface passivated silicon nanocrystallites are discussed

Union Gas Limited 2000 annual report

International Nuclear Information System (INIS)

2000-01-01

Financial information from Union Gas was presented along with a review of their operations throughout 2000. Union Gas is a major Canadian natural gas utility providing energy services to more than 1.1 million residential, commercial and industrial customers in more than 400 communities in Ontario. The company also provides natural gas storage and transportation services for other utilities and energy market participants in Ontario, Quebec and the United States. Revenue for 2000 was reported to be $1.6 billion, net income was $113 million and assets totaled $3.9 billion. Total throughput for 2000 was 35.8 billion cubic meters. Union Gas is a wholly-owned subsidiary of Westcoast Energy Inc. of Vancouver, British Columbia. In 2000, progress was made toward the introduction of performance-based regulation to replace the cost of service regulation currently in use. This initiative will enable the company to provide competitively priced services to customers, allowing them, along with shareholders to benefit from efficiency enhancements and new service offerings. tabs., figs

Electrical behavior of free-standing porous silicon layers

International Nuclear Information System (INIS)

Bazrafkan, I.; Dariani, R.S.

2009-01-01

The electrical behavior of porous silicon (PS) layers has been investigated on one side of p-type silicon with various anodization currents and electrolytes. The two contact I-V characteristic is assigned by the metal/porous silicon rectifying interface, whereas, by using the van der Pauw technique, a nonlinear dependence of the current vs voltage was found. By using Dimethylformamide (DMF) in electrolyte, regular structures and columns were formed and porosity increased. Our results showed that by using DMF, surface resistivity of PS samples increased and became double for free-standing porous silicon (FPS). The reason could be due to increasing surface area and adsorbing some more gas molecules. Activation energy of PS samples was also increased from 0.31 to 0.34 eV and became 0.35 eV for FPS. The changes induced by storage are attributed to the oxidation process of the internal surface of free-standing porous silicon layers.

Effect of Ion Beam Irradiation on Silicon Carbide with Different Microstructures

International Nuclear Information System (INIS)

Park, Kyeong Hwan; Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

2006-01-01

SiC and SiC/SiC composites are one of promising candidates for structural materials of the next generation energy systems such as the gas-cooled reactors and fusion reactors. This anticipation yields many material issues, and radiation effects of silicon carbide are recognized as an important research subject. Silicon carbide has diverse crystal structures (called polytypes), such as α-SiC (hexagonal structure), β-SiC (cubic structure) and amorphous SiC. Among these polytypes, β-SiC has been studied as matrix material in SiC/SiC composites. Near-stoichiometric β-SiC with high crystallinity and purity is considered as suitable material in the next generation energy system and matrix material in SiC/SiC composites because of its excellent radiation resistance. Highly pure and crystalline β-SiC and SiC/SiC composites could be obtained by the chemical vapor deposition (CVD) and Infiltration (CVI) process using a gas mixture of methyltrichlorosilane (CH 3 SiCl 3 , MTS) and purified H 2 . SiC produced by the CVD method has different grain size and microstructural morphology depended on the process conditions such as temperature, pressure and the input gas ratio. In this work, irradiation effects of silicon carbide were investigated using ion beam irradiation with emphasis on the influence of grain size and grain boundary. MeV ion irradiation at low temperature makes amorphous phase in silicon carbide. The microstructures and mechanical property changes of silicon carbide with different structures were analyzed after ion beam irradiation

Compositional analysis of silicon oxide/silicon nitride thin films

Directory of Open Access Journals (Sweden)

Meziani Samir

2016-06-01

Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

Energy Technology Data Exchange (ETDEWEB)

Kuisseu, Pauline Sylvia Pokam, E-mail: pauline-sylvia.pokam-kuisseu@cnrs-orleans.fr [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Pingault, Timothée; Ntsoenzok, Esidor [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Regula, Gabrielle [IM2NP-CNRS-Université d’Aix-Marseille, Avenue Escadrille Normandie Niemen, 13397 Marseille (France); Mazen, Frédéric [CEA-Leti, MINATEC campus, 17, rue des Martyrs, 38054 Grenoble Cedex 9 (France); Sauldubois, Audrey [Université d’Orléans, rue de Chartres – Collegium ST, 45067 Orléans (France); Andreazza, Caroline [ICMN-CNRS-Université d’Orléans, 1b rue de la férollerie, 45071 Orléans (France)

2017-06-15

MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 µm and 100 µm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 10{sup 16} H/cm{sup 2} to 2 × 10{sup 17} H/cm{sup 2} and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5–0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

International Nuclear Information System (INIS)

Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

2016-01-01

We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si (1 0 0) substrate

International Nuclear Information System (INIS)

Bhuyan, H; Favre, M; Valderrama, E; Avaria, G; Chuaqui, H; Mitchell, I; Wyndham, E; Saavedra, R; Paulraj, M

2007-01-01

We report the investigation of high energy ion beam irradiation on Si (1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm

The role of point defects and defect complexes in silicon device processing. Summary report and papers

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.; Tan, T.Y.

1994-08-01

This report is a summary of a workshop hold on August 24--26, 1992. Session 1 of the conference discussed characteristics of various commercial photovoltaic silicon substrates, the nature of impurities and defects in them, and how they are related to the material growth. Session 2 on point defects reviewed the capabilities of theoretical approaches to determine equilibrium structure of defects in the silicon lattice arising from transitional metal impurities and hydrogen. Session 3 was devoted to a discussion of the surface photovoltaic method for characterizing bulk wafer lifetimes, and to detailed studies on the effectiveness of various gettering operations on reducing the deleterious effects of transition metals. Papers presented at the conference are also included in this summary report.

Study the gas sensing properties of boron nitride nanosheets

International Nuclear Information System (INIS)

Sajjad, Muhammad; Feng, Peter

2014-01-01

Graphical abstract: - Highlights: • We synthesized boron nitride nanosheets (BNNSs) on silicon substrate. • We analyzed gas sensing properties of BNNSs-based gas-sensor device. • CH 4 gas is used to measure gas-sensing properties of the device. • Quick response and recovery time of the device is recorded. • BNNSs showed excellent sensitivity to the working gas. - Abstract: In the present communication, we report on the synthesis of boron nitride nanosheets (BNNSs) and study of their gas sensing properties. BNNSs are synthesized by irradiating pyrolytic hexagonal boron nitride (h-BN) target using CO 2 laser pulses. High resolution transmission electron microscopic measurements (HRTEM) revealed 2-dientional honeycomb crystal lattice structure of BNNSs. HRTEM, electron diffraction, XRD and Raman scattering measurements clearly identified h-BN. Gas sensing properties of synthesized BNNSs were analyzed with prototype gas sensor using methane as working gas. A systematic response curve of the sensor is recorded in each cycle of gas “in” and “out”; suggesting excellent sensitivity and high performance of BNNSs-based gas-sensor

MEMS-based Porous Silicon Preconcentrators Filled with Carbopack-B for Explosives Detection

OpenAIRE

Camara , El Hadji Malik; James , Franck; Breuil , Philippe; Pijolat , Christophe; Briand , Danick; De Rooij , Nicolaas F

2014-01-01

International audience; In this paper we report the detection of explosive compounds using a miniaturized gas preconcentrator (μGP) made of porous silicon (PS) filled in with Carbopack B as an adsorbent material. The μGP includes also a platinum heater patterned at the backside and fluidic connectors sealed on the glass cover. Our μGP is designed and optimized through fluidic and thermal simulations for meeting the requirements of trace explosives detection. The thermal mass of the device was...

Microstructured silicon created with a nanosecond neodymium-doped yttrium aluminum garnet laser

Energy Technology Data Exchange (ETDEWEB)

Mandeville, W.J. [MITRE Corporation, Colorado Springs, CO (United States); Shaffer, M.K.; Lu, Yalin; O' Keefe, D.; Knize, R.J. [United States Air Force Academy, USAFA, CO (United States)

2011-08-15

We produce microstructured silicon using frequency doubled, nanosecond Nd:YAG pulses in SF{sub 6} gas. The micro-penitentes formed are up to 20 {mu}m tall with a sulfur concentration of 0.5% near the surface. The infrared absorption is increased to near unity and extends well below the original bandgap far into the infrared. These data are similar to results reported by others using more complicated and less economical femtosecond titanium sapphire and picosecond and nanosecond excimer lasers. (orig.)

Natural gas imports and exports. First quarter report 1997

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-09-01

The Office of Natural Gas and Petroleum Import and Export Activities prepares quarterly reports summarizing the data provided by companies authorized to import or export natural gas. Attachment A shows the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent reporting quarters. Attachment B shows volumes and prices of gas purchased by long-term importers and exporters during the past 12 months. Attachment C shows volume and price information pertaining to gas imported on a short-term or spot market basis. Attachment D shows the gas exported on a short-term or spot market basis to Canada and Mexico. 14 figs., 9 tabs.

Preliminary report on the commercial viability of gas production from natural gas hydrates

Science.gov (United States)

Walsh, M.R.; Hancock, S.H.; Wilson, S.J.; Patil, S.L.; Moridis, G.J.; Boswell, R.; Collett, T.S.; Koh, C.A.; Sloan, E.D.

2009-01-01

Economic studies on simulated gas hydrate reservoirs have been compiled to estimate the price of natural gas that may lead to economically viable production from the most promising gas hydrate accumulations. As a first estimate, $CDN2005 12/Mscf is the lowest gas price that would allow economically viable production from gas hydrates in the absence of associated free gas, while an underlying gas deposit will reduce the viability price estimate to $CDN2005 7.50/Mscf. Results from a recent analysis of the simulated production of natural gas from marine hydrate deposits are also considered in this report; on an IROR basis, it is $US2008 3.50-4.00/Mscf more expensive to produce marine hydrates than conventional marine gas assuming the existence of sufficiently large marine hydrate accumulations. While these prices represent the best available estimates, the economic evaluation of a specific project is highly dependent on the producibility of the target zone, the amount of gas in place, the associated geologic and depositional environment, existing pipeline infrastructure, and local tariffs and taxes. ?? 2009 Elsevier B.V.

Silicon microphotonic waveguides

International Nuclear Information System (INIS)

Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

2004-01-01

Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

Pacific Northern Gas Ltd. annual report 2002

International Nuclear Information System (INIS)

2003-01-01

Pacific Northern Gas Ltd. operates in west-central and northeast British Columbia. The company delivers natural gas to customers through a transmission pipeline connected to Duke Energy system near Summit Lake, British Columbia. This report states that in 2002 financial results were disappointing. The company's net income in 2002 was lower than it was in 2001 ($4.6 million versus $5.7 million). In December 2002, Pacific Northern Gas Ltd. completed $15 million in financing. Additions to property, plant and equipment reached a total of $6 million in 2002. A new, seven-year contract with Methanex Corporation was successfully negotiated. Pacific Northern Gas Ltd. filed revenue requirements applications with the British Columbia Utilities Commission, seeking the Commission's approval of rates for 2003 and requesting approval of a new deferral account in all divisions. A settlement of the western system 2003 revenue requirements application was negotiated with its customers. The annual report presented a highlight of all activities, including corporate governance and management discussions and analysis. Consolidated financial statements were also provided. tabs

Early Decomposition of Retained Heavy Silicone Oil Droplets

Directory of Open Access Journals (Sweden)

Touka Banaee

2012-01-01

Full Text Available Purpose: To report a case of early decomposition of retained heavy silicone oil droplets. Case Report: The single highly myopic eye of a 16-year-old boy with history of scleral buckling and buckle revision developed redetachment due to inferior retinal dialysis. The patient underwent pars plana vitrectomy and injection of heavy silicone oil. Early emulsification of the silicone oil was observed following surgery, which was removed 4 weeks later in another operation. Retained heavy silicone droplets lost their heavier- than-water specific gravity within 2 months together with extensive iris depigmentation, and release of pigment granules into the anterior chamber and vitreous cavity. Conclusion: This case report demonstrates that heavy silicone oil droplets can undergo in vivo chemical decomposition with possible toxic effects on ocular tissues.

Recurrent airway obstructions in a patient with benign tracheal stenosis and a silicone airway stent: a case report

Science.gov (United States)

Sriram, KB; Robinson, PC

2008-01-01

Airway stents (silicone and metal stents) are used to treat patients with benign tracheal stenosis, who are symptomatic and in whom tracheal surgical reconstruction has failed or is not appropriate. However airway stents are often associated with complications such as migration, granuloma formation and mucous hypersecretion, which cause significant morbidity, especially in patients with benign tracheal stenosis and relatively normal life expectancy. We report a patient who had frequent critical airway obstructions over 8 years due to granuloma and mucus hypersecretion in a silicone airway stent. The problem was resolved when the silicone stent was removed and replaced with a covered self expanding metal stent. PMID:18840299

Union Gas Ltd. : 1998 annual report

International Nuclear Information System (INIS)

1999-01-01

Consolidated annual financial information from Union Gas Ltd. was presented along with a review of their 1998 operations. On January 1, 1998, Union Gas Ltd. amalgamated with Centra Gas Ontario Inc. Both are wholly-owned subsidiaries of Westcoast Energy Inc., and had operated under a shared services arrangement since 1994. The assets, liabilities and shareholders equity of Union and Centra were combined and accounted for at their carrying amounts. In 1998, the customer base grew by 3.3 per cent. The distribution service area of Union Gas extends across northern Ontario from the Manitoba border to the North Bay/Muskoka area and through certain parts of southern Ontario. The company also provides natural gas storage and transportation services for other utilities and energy market participants in Ontario, Quebec and the United States. This report gives full account of the company's energy resource activities, presents a detailed operations review as well as the company's consolidated financial statements. Revenue for 1998 was $1.6 billion, net income was 109 million, and assets were $4 billion. Total throughput for 1998 was 31.8 billion cubic metres of natural gas. tabs., figs

[Silicone breast prosthesis and rheumatoid arthritis: a new systemic disease: siliconosis. A case report and a critical review of the literature].

Science.gov (United States)

Iannello, S; Belfiore, F

1998-04-01

Today the number of women receiving breast implants of silicone gel, for augmentation or reconstruction of the breast, is increasing. Silicon implants may cause local complications (such as capsular contracture, rupture, closed capsulotomy, gel "bleed", nodular foreign body granulomas in the capsular tissue and lymph nodes) or general symptoms. An adverse immune reaction with signs and symptoms of rheumatoid disorders is also possible, although an increased frequency of true autoimmune systemic connective tissue diseases is controversial. The US Food and Drug Administration advised that these silicone implants should be used only in reconstructive surgery and as part of clinical trials. Silicone is not an inert substance and silicone compounds were found in the blood and liver of women with silicone breast implants. The development of disease related to silicone implants would depend on genetic factors, so that only a very few women are potentially at risk. HLA-DR53 may be a marker of predisposed subjects. Breast-feeding by women with silicone implants should not be recommended for possible autoimmune disorders in the children. We report the case of an adult female patient with silicone breast implantation for bilateral mastectomy (performed 12 months before) and a unique syndrome characterized by low-grade fever, chronic fatigue, arthralgias of the hands, dysphagia, dry eye, increased level of rheumatoid factor and decreased value of complement C3 and C4. No increased erythrocyte sedimentation rate occurred, and no ANA, nDNA, ENA and AAT autoantibodies were evidence. A critical review of literature (source: MEDLINE 1980-1997) was performed and our case seems to be the first one reported in Italy. The internist should become familiar with the immunological disorders related to silicone breast implants, often so marked to require the explantation of the prostheses to improve symptomatology. However, perhaps due to the leak and spreading of silicone, the progression

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

Energy Technology Data Exchange (ETDEWEB)

Wohlgemuth, J.; Narayanan, M.

2006-07-01

The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

Science.gov (United States)

Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

1978-01-01

Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Delayed-Onset Edematous Foreign Body Granulomas 40 Years After Augmentation Rhinoplasty by Silicone Implant Combined with Liquid Silicone Injection.

Science.gov (United States)

Hu, Hao-Chun; Fang, Hsu-Wei; Chiu, Yu-Hsun

2017-06-01

Despite the widespread application of augmentation rhinoplasty in Asia, reports on the interaction between alloplastic implants and injectable filler are scarce. This paper reports on a patient with delayed-onset edematous foreign body granuloma that had been caused by augmentation rhinoplasty performed using a silicone implant in conjunction with a liquid silicone injection 40 years earlier. This is the longest reported duration between initial rhinoplasty and the exacerbation of foreign body granuloma. This case report also presents intraoperative findings pertaining to the interlocking structures between silicone implants and injected liquid silicone. This journal requires that authors assign a level of evidence to each article. For a full description of these Evidence-Based Medicine ratings, please refer to the Table of Contents or the online Instructions to Authors www.springer.com/00266 .

Structure and physical properties of silicon clusters and of vacancy clusters in bulk silicon

International Nuclear Information System (INIS)

Sieck, A.

2000-01-01

In this thesis the growth-pattern of free silicon clusters and vacancy clusters in bulk silicon is investigated. The aim is to describe and to better understand the cluster to bulk transition. Silicon structures in between clusters and solids feature new interesting physical properties. The structure and physical properties of silicon clusters can be revealed by a combination of theory and experiment, only. Low-energy clusters are determined with different optimization techniques and a density-functional based tight-binding method. Additionally, infrared and Raman spectra, and polarizabilities calculated within self-consistent field density-functional theory are provided for the smaller clusters. For clusters with 25 to 35 atoms an analysis of the shape of the clusters and the related mobilities in a buffer gas is given. Finally, the clusters observed in low-temperature experiments are identified via the best match between calculated properties and experimental data. Silicon clusters with 10 to 15 atoms have a tricapped trigonal prism as a common subunit. Clusters with up to about 25 atoms follow a prolate growth-path. In the range from 24 to 30 atoms the geometry of the clusters undergoes a transition towards compact spherical structures. Low-energy clusters with up to 240 atoms feature a bonding pattern strikingly different from the tetrahedral bonding in the solid. It follows that structures with dimensions of several Angstroem have electrical and optical properties different from the solid. The calculated stabilities and positron-lifetimes of vacancy clusters in bulk silicon indicate the positron-lifetimes of about 435 ps detected in irradiated silicon to be related to clusters of 9 or 10 vacancies. The vacancies in these clusters form neighboring hexa-rings and, therefore, minimize the number of dangling bonds. (orig.)

Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

KAUST Repository

Hussain, Aftab M.

2016-07-15

Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

KAUST Repository

Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

2016-01-01

Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

Natural gas imports and exports. Fourth quarter report

Energy Technology Data Exchange (ETDEWEB)

NONE

1995-12-31

This report summarizes the data provided by companies authorized to import or export natural gas. Data includes volume and price for long term and short term, and gas exported to Canada and Mexico on a short term or spot market basis.

Natural gas imports and exports. First quarter report 1994

Energy Technology Data Exchange (ETDEWEB)

1994-08-01

The Office of Fuels Programs Prepares quarterly reports Summarizing the data provided by companies authorized to import or export natural gas. Companies are required, as a condition of their authorizations, to file quarterly reports with the OFP. This report is for the first quarter of 1994 (January--March). Attachment A shows the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent reporting quarters. Attachment B shows volumes and prices of gas purchased by long-term importers and exporters during the past twelve months. Attachment C shows volume and price information for gas imported on a short-term basis. Attachment D shows the gas exported on a short-term basis to Canada and Mexico. During the first three months of 1994, data indicates that gas imports grew by about 14 percent over the level of the first quarter of 1993 (668 vs. 586 Bcf), with Canadian and Algerian imports increasing by 12 and 53 percent, respectively. During the same time period, exports declined by 15 percent (41 vs. 48 Bcf). Exports to Canada increased by 10 percent from the 1993 level (22 vs. 20 Bcf) and exports to Mexico decreased by 64 percent (5 vs. 14 Bcf).

Natural gas imports and exports; Fourth quarterly report, 1993

Energy Technology Data Exchange (ETDEWEB)

NONE

1993-12-31

The Office of Fuels Programs prepares quarterly reports summarizing the data provided by companies authorized to import or export natural gas. Companies are required, as a condition of their authorizations, to file quarterly reports with the OFP. This report is for the fourth quarter of 1993 (October--December). Attachment A shows the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the 5 most recent reporting quarters. Attachment B shows volumes and prices of gas purchased by long-term importers and exporters during the past 12 months. Attachment C shows volume and price information for gas imported on a short-term basis. Attachment D shows the gas exported on a short-term basis to Canada and Mexico. During 1993, data indicates gas imports grew by about 10 percent over the 1992 level (2328 vs. 2122 Bcf), with Canadian and Algerian imports increasing by 8 and 82 percent, respectively. During the same time period, exports declined by 41 percent (144 vs. 243 Bcf). Exports to Canada decreased 47 percent from the 1992 level (50 vs. 95 Bcf) and exports to Mexico decreased by 60 percent (38 vs. 95 Bcf).

Spontaneous layering of porous silicon layers formed at high current densities

Energy Technology Data Exchange (ETDEWEB)

Parkhutik, Vitali; Curiel-Esparza, Jorge; Millan, Mari-Carmen [R and D Center MTM, Technical University of Valencia, Valencia (Spain); Albella, Jose [Institute of Materials Science (ICMM CSIC) Madrid (Spain)

2005-06-01

We report here a curious effect of spontaneous fracturing of the silicon layers formed in galvanostatic conditions at medium and high current densities. Instead of formation of homogeneous p-Si layer as at low currents, a stack of thin layers is formed. Each layer is nearly separated from others and possesses rather flat interfaces. The effects is observed using p{sup +}-Si wafers for the p-Si formation and starts being noticeable at above 100 mA/cm{sup 2}. We interpret these results in terms of the porous silicon growth model where generation of dynamic mechanical stress during the p-Si growth causes sharp changes in Si dissolution mechanism from anisotropic etching of individual needle-like pores in silicon to their branching and isotropic etching. At this moment p-Si layer loses its adhesion to the surface of Si wafer and another p-Si layer starts growing. One of the mechanisms triggering on the separation of p-Si layers from one another is a fluctuation of local anodic current in the pore bottoms associated with gas bubble evolution during the p-Si formation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Radiation hard silicon particle detectors for HL-LHC—RD50 status report

Energy Technology Data Exchange (ETDEWEB)

Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

2017-02-11

It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

Self-diffusion in single crystalline silicon nanowires

Science.gov (United States)

Südkamp, T.; Hamdana, G.; Descoins, M.; Mangelinck, D.; Wasisto, H. S.; Peiner, E.; Bracht, H.

2018-04-01

Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and 1000 °C are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.

Synthesis of the cactus-like silicon nanowires/tungsten oxide nanowires composite for room-temperature NO{sub 2} gas sensor

Energy Technology Data Exchange (ETDEWEB)

Zhang, Weiyi, E-mail: zhangweiyi@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Hu, Ming [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Liu, Xing; Wei, Yulong; Li, Na [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Qin, Yuxiang, E-mail: qinyuxiang@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)

2016-09-15

In the present work, the tungsten oxide (WO{sub 3}) nanowires functionalized silicon nanowires (SiNWs) with cactus-like structure has been successfully synthesized for room-temperature NO{sub 2} detection. The novel nanocomposite was fabricated by metal-assisted chemical etching (MACE) and thermal annealing of tungsten film. The WO{sub 3} nanowires were evenly distributed from the upper to the lower part of the SiNWs, indicating excellent uniformity which is conducive to adsorption and desorption of gas molecules. The gas-sensing properties have been examined by measuring the resistance change towards 0.25–5 ppm NO{sub 2} gas. At room temperature, which is the optimum working temperature, the SiNWs/WO{sub 3} nanowires composite showed two-times higher NO{sub 2} response than that of the bare SiNWs at 2 ppm NO{sub 2}. On the contrary, the responses of composite sensors to high concentrations of other reducing gases were very low, indicating excellent selectivity. Simultaneously, the composite sensors exhibited good sensing repeatability and stability. The enhancement in gas sensing properties may be attributed to the change in width of the space charge region, which is similar to the behavior of p-n junctions under forward bias, in the high-density p-n heterojunction structure formed between SiNWs and WO{sub 3} nanowires. - Highlights: • SiNWs/WO{sub 3} nanowires composite with cactus-like structure is synthesized. • The morphology of WO{sub 3} nanowires depends on the thermal annealing temperature. • The nanocomposite sensor exhibit better gas response than that of bare SiNWs. • The gas sensing mechanism is discussed using p-n heterojunction theory.

Characterization of amorphous silicon films by Rutherford backscattering spectrometry. [1. 5-MeV Ho/sup +/

Energy Technology Data Exchange (ETDEWEB)

Kubota, K; Imura, T; Iwami, M; Hiraki, A [Osaka Univ., Suita (Japan). Dept. of Electrical Engineering; Satou, M [Government Industrial Research Inst., Osaka, Ikeda (Japan); Fujimoto, F [Tokyo Univ. (Japan). Coll. of General Education; Hamakawa, Y [Osaka Univ., Toyonaka (Japan). Faculty of Engineering Science; Minomura, S [Tokyo Univ. (Japan). Inst. for Solid State Physics; Tanaka, K [Electrotechnical Lab., Tanashi, Tokyo (Japan)

1980-01-01

Rutherford backscattering spectrometry (RBS) was applied to the characterization of amorphous silicon films prepared by glow discharge in silane, tetrode- and diode-sputterings of silicon target in ambient argon or hydrogen diluted by argon. This method was able to detect at least 5 at.% hydrogen atoms in amorphous silicon through the change of stopping power. Hydrogen content in films made by glow discharge at the substrate temperature 25/sup 0/C to 300/sup 0/C and at 2 torr of silane gas varied from 50% to 20%. A strong trend was found for oxygen to dissolve into films: Films produced by diode sputtering in argon gas with higher pressure than 3 x 10/sup -2/ torr absorbed oxygen. The potential and fitness of the RBS method for the characterization of amorphous silicon films are emphasized and demonstrated.

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

Science.gov (United States)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons

Directory of Open Access Journals (Sweden)

Ye Chang

2018-01-01

Full Text Available In this paper, we develop a novel dual-mode gas sensor system which comprises a silicon nanoribbon field effect transistor (Si-NR FET and a film bulk acoustic resonator (FBAR. We investigate their sensing characteristics using polar and nonpolar organic compounds, and demonstrate that polarity has a significant effect on the response of the Si-NR FET sensor, and only a minor effect on the FBAR sensor. In this dual-mode system, qualitative discrimination can be achieved by analyzing polarity with the Si-NR FET and quantitative concentration information can be obtained using a polymer-coated FBAR with a detection limit at the ppm level. The complementary performance of the sensing elements provides higher analytical efficiency. Additionally, a dual mixture of two types of freons (CFC-113 and HCFC-141b is further analyzed with the dual-mode gas sensor. Owing to the small size and complementary metal-oxide semiconductor (CMOS-compatibility of the system, the dual-mode gas sensor shows potential as a portable integrated sensing system for the analysis of gas mixtures in the future.

Electrical activation of phosphorus in silicon

International Nuclear Information System (INIS)

Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

2003-01-01

Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

Request for Correction 12003 Greenhouse Gas Emissions Reporting from the Petroleum and Natural Gas Industry

Science.gov (United States)

Request for Correction by the U.S. Chamber of Commerce for information in Greenhouse Gas Emissions Reporting from the Petroleum Gas Industry that regarding methane emissions, volatile organic compounds, and hazardous air pollutants.

75 FR 29404 - Contract Reporting Requirements of Intrastate Natural Gas Companies

Science.gov (United States)

2010-05-26

...; Order No. 735] Contract Reporting Requirements of Intrastate Natural Gas Companies May 20, 2010. AGENCY... revises the contract reporting requirements for those natural gas pipelines that fall under the Commission's jurisdiction pursuant to section 311 of the Natural Gas Policy Act or section 1(c) of the Natural...

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

International Nuclear Information System (INIS)

Xiao-Dan, Zhang; He, Zhang; Chang-Chun, Wei; Jian, Sun; Guo-Fu, Hou; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

2010-01-01

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

Energy Technology Data Exchange (ETDEWEB)

Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

2014-10-27

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

International Nuclear Information System (INIS)

Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

2014-01-01

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

76 FR 22825 - Mandatory Reporting of Greenhouse Gases: Petroleum and Natural Gas Systems

Science.gov (United States)

2011-04-25

... Reporting of Greenhouse Gases: Petroleum and Natural Gas Systems AGENCY: Environmental Protection Agency... Subpart W: Petroleum and Natural Gas Systems of the Greenhouse Gas Reporting Rule. As part of the... greenhouse gas emissions for the petroleum and natural gas systems source category of the greenhouse gas...

Gas and particle velocity measurements in an induction plasma

International Nuclear Information System (INIS)

Lesinski, J.; Gagne, R.; Boulos, M.I.

1981-08-01

Laser doppler anemometry was used for the measurements of the plasma and particle velocity profiles in the coil region of an inductively coupled plasma. Results are reported for a 50 mm ID induction torch operated at atmospheric pressure with argon as the plasma gas. The oscillator frequency was 3 MHz and the power in the coil was varied between 4.6 and 10.5 kW. The gas velocity measurements were made using a fine carbon powder as a tracer (dp approx. = 1 μm). Measurements were also made with larger silicon particles (dp = 33 μm and sigma = 13 μm) centrally injected in the plasma under different operating conditions

Design criteria for XeF{sub 2} enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

Energy Technology Data Exchange (ETDEWEB)

Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad M., E-mail: muhammadmustafa.hussain@kaust.edu.sa [Integrated Nanotechnology Laboratory (INL) and Integrated Disruptive Electronics Applications (IDEA) Laboratory, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology - KAUST, Thuwal 23955-6900 (Saudi Arabia)

2016-07-15

Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF{sub 2}) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

Catalytic oxidation of silicon by cesium ion bombardment

International Nuclear Information System (INIS)

Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

1991-01-01

Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 April 2002--30 September 2003 (Revised)

Energy Technology Data Exchange (ETDEWEB)

Wohlgemuth, J.; Shea, S. P.

2004-04-01

The goal of BP Solar's Crystalline PVMaT program is to improve the present polycrystalline silicon manufacturing facility to reduce cost, improve efficiency, and increase production capacity. Key components of the program are: increasing ingot size; improving ingot material quality; improving material handling; developing wire saws to slice 100 ..mu..m thick silicon wafers on 200 ..mu..m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100 ..mu..m thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50 MW (annual nominal capacity) green-field Mega plant factory model template based on this new thin polycrystalline silicon technology; and facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

Characterization of nanocrystalline silicon germanium film and ...

African Journals Online (AJOL)

The nanocrystalline silicon-germanium films (Si/Ge) and Si/Ge nanotubes have low band gaps and high carrier mobility, thus offering appealing potential for absorbing gas molecules. Interaction between hydrogen molecules and bare as well as functionalized Si/Ge nanofilm and nanotube was investigated using Monte ...

Natural gas imports and exports. Third quarter report 1997

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-01-01

This quarterly report, prepared by The Office of Natural Gas and Petroleum Import and Export Activities, summarizes the data provided by companies authorized to import or export natural gas. Numerical data are presented in four attachments, each of which is comprised of a series of tables. Attachment A shows the percentage of takes to maximum firm contract levels and the weighted average per unit price for each of the long-term importers during the five most recent calendar quarters. Volumes and prices of gas purchased by long-term importers and exporters during the past year are given in Attachment B. Attachment C shows volume and price information pertaining to gas imported on a short-term or spot market basis. Attachment D lists gas exported on a short-term or spot market basis to Canada and Mexico. Highlights of the report are very briefly summarized.

Investigation of optimized experimental parameters including laser wavelength for boron measurement in photovoltaic grade silicon using laser-induced breakdown spectroscopy

International Nuclear Information System (INIS)

Darwiche, S.; Benmansour, M.; Eliezer, N.; Morvan, D.

2010-01-01

The quantification of boron and other impurities in photovoltaic grade silicon was investigated using the LIBS technique with attention to the laser wavelength employed, temporal parameters, and the nature of the ambient gas. The laser wavelength was found to have a moderate effect on the performance of the process, while the type of purge gas and temporal parameters had a strong effect on the signal-to-background ratio (SBR) of the boron spectral emission, which was used to determine the boron concentration in silicon. The three parameters are not independent, meaning that for each different purge gas, different optimal temporal parameters are observed. Electron density was also calculated from Stark broadening of the 390.5 nm silicon emission line in order to better understand the different performances observed when using different gases and gating parameters. Calibration curves were made for boron measurement in silicon using certified standards with different purge gases while using the temporal parameters which had been optimized for that gas. By comparing the calibration curves, it was determined that argon is superior to helium or air for use as the analysis chamber purge gas with an UV laser.

High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump–probe reflectivity measurements

Energy Technology Data Exchange (ETDEWEB)

He, Wei [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Yurkevich, Igor V. [Aston University, Nonlinearity and Complexity Research Group, Birmingham B4 7ET (United Kingdom); Zakar, Ammar [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Kaplan, Andrey, E-mail: a.kaplan.1@bham.ac.uk [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom)

2015-10-01

We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump–probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820 nm, whereas the probe wavelength spanned 770 to 810 nm. The pump fluence was fixed at 0.6 mJ/cm{sup 2}. We show that at a fixed delay time of 300 fs, the conductivity of the excited electron–hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell–Boltzmann distribution, while Fermi–Dirac statics is not suitable. This is corroborated by values retrieved from pump–probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas. - Highlights: • We study high‐frequency conductivity of excited hydrogenated nanocrystalline silicon. • Reflectance change was measured as a function of pump and probe wavelength. • Maxwell–Boltzmann transport theory was used to retrieve the conductivity. • The conductivity decreases monotonically as a function of the pump wavelength.

Novel gas-based detection techniques

International Nuclear Information System (INIS)

Graaf, Harry van der

2009-01-01

This year we celebrate the 100th birthday of gaseous detectors: Hans Geiger operated the first gas-filled counter in Manchester in 1908. The thin wires, essential for obtaining gas amplification, have been replaced by Micro Pattern Gas Detectors (MPGDs): Micromegas (1995) and GEM (1996). In the GridPix detector, each of the grid holes of a MPGD is equipped with its own electronic readout channel in the form of an active pixel in suitable pixel CMOS chips. By means of MEMS technology, the grid has been integrated with the chip, forming a monolithic readout device for gas volumes. By applying a protection layer made of hydrogenated amorphous silicon, the chips can be made spark proof. New protection layers have been made of silicon nitride. The use of gas as detection material for trackers is compared to Si, and the issue of chamber aging is addressed. New developments are set out: the development of Micro Channel Plates, integrated on pixel chips, the development of electron emission foil, and the realization of TimePix-2: a general-purpose pixel chip with time and amplitude measurement, per pixel, of charge signals.

Report on the oil and gas industry 2010

International Nuclear Information System (INIS)

2011-01-01

Illustrated by graphs and tables of data, this report discusses the recent evolutions and trends of world oil and gas markets in 2010, of oil and gas exploration and production in the world, of the issue of European gas supplies, of exploration and production in France, of the oil industry and oil services, of hydrocarbon imports, of refining activities in France, of the quality of fuels, of substitution fuels, of the domestic transportation of oil products, of the issue of strategic storage, of oil product storage, of oil and gas products consumption, of hydrocarbon taxing, of the retailing of oil products, of oil product prices, and of gas price for the end consumer

Formation of iron disilicide on amorphous silicon

Science.gov (United States)

Erlesand, U.; Östling, M.; Bodén, K.

1991-11-01

Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

Liquid silicone used for esthetic purposes as a potentiator for occurrence of post-radiotherapy genital lymphedema: case report

Directory of Open Access Journals (Sweden)

Raíssa Quaiatti Antonelli

Full Text Available ABSTRACT CONTEXT: Lymphedema consists of extracellular fluid retention caused by lymphatic obstruction. In chronic forms, fat and fibrous tissue accumulation is observed. Genital lymphedema is a rare condition in developed countries and may have primary or acquired etiology. It generally leads to urinary, sexual and social impairment. Clinical treatment usually has low effectiveness, and surgical resection is frequently indicated. CASE REPORT: We report a case of a male-to-female transgender patient who was referred for treatment of chronic genital lymphedema. She had a history of pelvic radiotherapy to treat anal cancer and of liquid silicone injections to the buttock and thigh regions for esthetic purposes. Radiological examinations showed signs both of tissue infiltration by liquid silicone and of granulomas, lymphadenopathy and lymphedema. Surgical treatment was performed on the area affected, in which lymphedematous tissue was excised from the scrotum while preserving the penis and testicles, with satisfactory results. Histopathological examination showed alterations compatible with tissue infiltration by exogenous material, along with chronic lymphedema. CONCLUSION: Genital lymphedema may be caused by an association of lesions due to liquid silicone injections and radiotherapy in the pelvic region. Cancer treatment decisions for patients who previously underwent liquid silicone injection should take this information into account, since it may represent a risk factor for radiotherapy complications.

Handheld Multi-Gas Meters Market Survey Report

Energy Technology Data Exchange (ETDEWEB)

Williams, Gustavious [Brigham Young Univ., Provo, UT (United States); Wald-Hopkins, Mark David [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Obrey, Stephen J. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Akhadov, Valida Dushdurova [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2016-06-23

Handheld multi-gas meters (MGMs) are equipped with sensors to monitor oxygen (O2) levels and additional sensors to detect the presence of combustible or toxic gases in the environment. This report is limited to operational response-type MGMs that include at least four different sensors. These sensors can vary by type and by the chemical monitored. In real time, the sensors report the concentration of monitored gases in the atmosphere near the MGM. To provide emergency responders with information on handheld multi-gas meters, the System Assessment and Validation for Emergency Responders (SAVER) Program conducted a market survey. This market survey report is based on information gathered between November 2015 and February 2016 from vendors, Internet research, industry publications, an emergency responder focus group, and a government issued Request for Information (RFI) that was posted on the Federal Business Opportunities website.

Communication: Photoinduced carbon dioxide binding with surface-functionalized silicon quantum dots

Science.gov (United States)

Douglas-Gallardo, Oscar A.; Sánchez, Cristián Gabriel; Vöhringer-Martinez, Esteban

2018-04-01

Nowadays, the search for efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf-SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). The chemical and electronic properties of the proposed SiQDs have been studied with a Density Functional Theory and Density Functional Tight-Binding (DFTB) approach along with a time-dependent model based on the DFTB framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf-SiQDs for photochemically activated carbon dioxide fixation.

Methodology for reporting 2011 B.C. public sector greenhouse gas emissions

Energy Technology Data Exchange (ETDEWEB)

NONE

2011-12-15

In order to reduce its greenhouse gas emissions, British Columbia promulgated legislation under which the public sector is expected to become carbon neutral starting in 2010 and provincial public sector organizations (PSOs) must report their emissions annually. The aim of this report is to present the emission factors and methodology for calculating and reporting PSO emissions used in 2011. Emission factors represent the amount of greenhouse gas emitted from a specific activity. This document provides emission factors for all in scope categories: stationary sources, indirect emissions, mobile sources and business travel; it also presents a sample calculation of greenhouse gas emissions. The government of British Columbia developed SMARTTool, a web-based program which calculates and reports emissions from stationary sources, indirect emissions and mobile sources. In addition the SMART Travel Emissions Calculator was created to report business travel greenhouse gas emissions through SMARTTool.

Union Gas Limited Year 2000 progress report

International Nuclear Information System (INIS)

Hoey, P.

1999-04-01

Union Gas Ltd., a subsidiary of Westcoast Energy Inc., serves approximately 1.1 million customers in more than 400 communities in Ontario. The company has $3.6 billion worth of assets including distribution, storage and transmission facilities. This report outlines the company's Year 2000 (Y2K) preparedness efforts. The company does not see any Year 2000 challenges which would impede the flow of natural gas. Union Gas has contingency plans in place to provide business continuity in the event of any internal system failures. Currently, the following systems are 100 per cent Y2K ready: (1) gas flow and control systems, (2) information technology, (3) telecommunications systems, and (4) the billing system. The remaining systems are expected to be Y2K ready by mid-1999

Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

Science.gov (United States)

Atiwongsangthong, Narin

2012-08-01

The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

Report on the oil and gas industry in 2009

International Nuclear Information System (INIS)

2010-01-01

This report proposes an overview of facts, events and data concerning the world oil and gas markets, the oil and gas exploration and production in the world, the challenges of gas European supplies, the exploration and production in France, the oil and oil-related industry, hydrocarbons imports, the refining activity in France, fuel quality, alternative fuels, the domestic transportation of oil products, gas infrastructures, the storage of oil products, the consumption of oil and gas products, taxes on hydrocarbons, prices for the final consumer, and the prices of oil products

77 FR 63537 - Greenhouse Gas Reporting Program: Proposed Amendments and Confidentiality Determinations for...

Science.gov (United States)

2012-10-16

... Greenhouse Gas Reporting Program: Proposed Amendments and Confidentiality Determinations for Subpart I...-AR61 Greenhouse Gas Reporting Program: Proposed Amendments and Confidentiality Determinations for... Manufacturing, of the Greenhouse Gas Reporting Rule. Proposed changes include revising certain calculation...

An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

International Nuclear Information System (INIS)

Elhamri, S.; Berney, R.; Mitchel, W.C.; Mitchell, W.D.; Roberts, J.C.; Rajagopal, P.; Gehrke, T.; Piner, E.L.; Linthicum, K.J.

2004-01-01

We present results of transport measurements performed on AlGaN/GaN heterostructures grown on silicon substrates. Variable temperature Hall effect measurements revealed that the temperature dependence of the carrier density and mobility were characteristic of a two-dimensional electron gas (2DEG). Carrier densities greater than 1x10 13 cm -2 and Hall mobilities in excess of 1500 cm2/V s were measured at room temperature. Variable field Hall measurements at low temperatures, and in magnetic fields up to 6 T, indicated that conduction is dominated by a single carrier type in these samples. Shubnikov-de Haas (SdH) measurements were also performed, but no oscillations were observed in fields up to 8 T and at temperatures as low as 1.2 K. Illuminating some of the samples with a blue (λ=470 nm) light emitting diode (LED) induced a persistent increase in the carrier density. SdH measurements were repeated and again no oscillations were present following illumination. However, exposing the samples to radiation from an UV (λ=395 nm) LED induced well-defined SdH oscillations in fields as low as 4 T. The observation of SdH oscillations confirmed the presence of a 2DEG in these structures. It is hypothesized that small angle scattering suppressed the oscillations before exposure to UV light. This conclusion is supported by the observed increase in the quantum scattering time, τ q , with the carrier density and the calculated quantum to transport scattering times ratio, τ q /τ c . For instance, in one of the samples the τ q increased by 32% while the τ c changed by only 3% as the carrier density increased; an indication of an increase in the screening of small angle scattering. The absence of SdH oscillations in fields up to 8 T and at temperatures as low as 1.2 K is not unique to AlGaN/GaN on silicon. This behavior was observed in AlGaN/GaN on sapphire and on silicon carbide. SdH oscillations were observed in one AlGaN/GaN on silicon carbide sample following exposure to

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Silicon deposition in nanopores using a liquid precursor

Science.gov (United States)

Masuda, Takashi; Tatsuda, Narihito; Yano, Kazuhisa; Shimoda, Tatsuya

2016-11-01

Techniques for depositing silicon into nanosized spaces are vital for the further scaling down of next-generation devices in the semiconductor industry. In this study, we filled silicon into 3.5-nm-diameter nanopores with an aspect ratio of 70 by exploiting thermodynamic behaviour based on the van der Waals energy of vaporized cyclopentasilane (CPS). We originally synthesized CPS as a liquid precursor for semiconducting silicon. Here we used CPS as a gas source in thermal chemical vapour deposition under atmospheric pressure because vaporized CPS can fill nanopores spontaneously. Our estimation of the free energy of CPS based on Lifshitz van der Waals theory clarified the filling mechanism, where CPS vapour in the nanopores readily undergoes capillary condensation because of its large molar volume compared to those of other vapours such as water, toluene, silane, and disilane. Consequently, a liquid-specific feature was observed during the deposition process; specifically, condensed CPS penetrated into the nanopores spontaneously via capillary force. The CPS that filled the nanopores was then transformed into solid silicon by thermal decomposition at 400 °C. The developed method is expected to be used as a nanoscale silicon filling technology, which is critical for the fabrication of future quantum scale silicon devices.

Nano silicon for lithium-ion batteries

International Nuclear Information System (INIS)

Holzapfel, Michael; Buqa, Hilmi; Hardwick, Laurence J.; Hahn, Matthias; Wuersig, Andreas; Scheifele, Werner; Novak, Petr; Koetz, Ruediger; Veit, Claudia; Petrat, Frank-Martin

2006-01-01

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode

Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Wight, Daniel Nilsen

2008-07-01

quality, etch rate. The response of these parameters to high temperature anneals were correlated with structural changes in the silicon nitride films as measured by using the hydrogen bond concentration. Plasma enhanced chemical vapour deposition allows continuous variation in nearly all deposition parameters. The parameters studied in this work are the gas flow ratios and excitation power. In both direct and remote deposition systems, the increase in deposition power density lead to higher activation of ammonia which in turn lead to augmented incorporation of nitrogen into the films and thus lower refractive index. For a direct system, the same parameter change lead to a drastic fall in passivation quality of Czochralski silicon attributed to an increase in ion bombardment as well as the general observation that as deposited passivation tends to increase with refractive index. Silicon nitride films with variations in refractive index were also made by varying the silane-to-ammonia gas flow ratio. This simple parameter adjustment makes plasma enhanced chemical vapour deposited silicon nitride applicable to double layer anti-reflective coatings simulated in this work. The films were found to have an etch rate in 5% hydrofluoric acid that decreased with increasing refractive index. This behaviour is attributed to the decreasing concentration of nitrogen-to-hydrogen bonds in the films. Such bonds at the surface of silicon nitride have been suggested to be involved in the main reaction mechanism when etching silicon nitride in hydrofluoric acid. Annealing the films lead to a drastic fall in etch rates and was linked to the release of hydrogen from the nitrogen-hydrogen bonds. (author). 115 refs., 35 figs., 6 tabs

Report on the oil and gas industry in 2009

International Nuclear Information System (INIS)

2010-01-01

Illustrated by graphs and tables of data, this report discuss the recent evolutions of world oil and gas markets in 2009, of the oil and gas exploration and production in the world, of the issue of European gas supplies, of the exploration and production in France, of the oil industry and oil services, of hydrocarbon imports, of refining activities in France, of the quality of fuels, of substitution fuels, of the domestic transportation of oil products, of gas infrastructures, of oil product storage, of oil and gas products consumption, of hydrocarbon taxing, of gas price for the end consumer, of oil product prices, and of the retailing of oil products

76 FR 58741 - Storage Reporting Requirements of Interstate and Intrastate Natural Gas Companies

Science.gov (United States)

2011-09-22

...] Storage Reporting Requirements of Interstate and Intrastate Natural Gas Companies AGENCY: Federal Energy... the semi-annual storage reporting requirements for Interstate and Intrastate Natural Gas Companies... proposes to eliminate the semi-annual storage reporting requirements for: (1) Interstate natural gas...

Effect of mixture ratios and nitrogen carrier gas flow rates on the morphology of carbon nanotube structures grown by CVD

CSIR Research Space (South Africa)

Malgas, GF

2008-02-01

Full Text Available This paper reports on the growth of carbon nanotubes (CNTs) by thermal Chemical Vapour Deposition (CVD) and investigates the effects of nitrogen carrier gas flow rates and mixture ratios on the morphology of CNTs on a silicon substrate by vaporizing...

77 FR 4220 - Storage Reporting Requirements of Interstate and Intrastate Natural Gas Companies

Science.gov (United States)

2012-01-27

...; Order No. 757] Storage Reporting Requirements of Interstate and Intrastate Natural Gas Companies AGENCY... eliminates the semi-annual storage reporting requirements for Interstate and Intrastate Natural Gas Companies...-annual storage reporting requirements for (1) interstate natural gas companies subject to the Commission...

78 FR 68161 - Greenhouse Gas Reporting Program: Final Amendments and Confidentiality Determinations for...

Science.gov (United States)

2013-11-13

... 98 Greenhouse Gas Reporting Program: Final Amendments and Confidentiality Determinations for...-HQ-OAR-2011-0028; FRL-9845-6] RIN 2060-AR61 Greenhouse Gas Reporting Program: Final Amendments and... monitoring methodologies for electronics manufacturers covered by the Greenhouse Gas Reporting Rule. These...

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

Versatile silicon-waveguide supercontinuum for coherent mid-infrared spectroscopy

Science.gov (United States)

Nader, Nima; Maser, Daniel L.; Cruz, Flavio C.; Kowligy, Abijith; Timmers, Henry; Chiles, Jeff; Fredrick, Connor; Westly, Daron A.; Nam, Sae Woo; Mirin, Richard P.; Shainline, Jeffrey M.; Diddams, Scott

2018-03-01

Laser frequency combs, with their unique combination of precisely defined spectral lines and broad bandwidth, are a powerful tool for basic and applied spectroscopy. Here, we report offset-free, mid-infrared frequency combs and dual-comb spectroscopy through supercontinuum generation in silicon-on-sapphire waveguides. We leverage robust fabrication and geometrical dispersion engineering of nanophotonic waveguides for multi-band, coherent frequency combs spanning 70 THz in the mid-infrared (2.5 μm-6.2 μm). Precise waveguide fabrication provides significant spectral broadening with engineered spectra targeted at specific mid-infrared bands. We characterize the relative-intensity-noise of different bands and show that the measured levels do not pose any limitation for spectroscopy applications. Additionally, we use the fabricated photonic devices to demonstrate dual-comb spectroscopy of a carbonyl sulfide gas sample at 5 μm. This work forms the technological basis for applications such as point sensors for fundamental spectroscopy, atmospheric chemistry, trace and hazardous gas detection, and biological microscopy.

Versatile silicon-waveguide supercontinuum for coherent mid-infrared spectroscopy

Directory of Open Access Journals (Sweden)

Nima Nader

2018-03-01

Full Text Available Laser frequency combs, with their unique combination of precisely defined spectral lines and broad bandwidth, are a powerful tool for basic and applied spectroscopy. Here, we report offset-free, mid-infrared frequency combs and dual-comb spectroscopy through supercontinuum generation in silicon-on-sapphire waveguides. We leverage robust fabrication and geometrical dispersion engineering of nanophotonic waveguides for multi-band, coherent frequency combs spanning 70 THz in the mid-infrared (2.5 μm–6.2 μm. Precise waveguide fabrication provides significant spectral broadening with engineered spectra targeted at specific mid-infrared bands. We characterize the relative-intensity-noise of different bands and show that the measured levels do not pose any limitation for spectroscopy applications. Additionally, we use the fabricated photonic devices to demonstrate dual-comb spectroscopy of a carbonyl sulfide gas sample at 5 μm. This work forms the technological basis for applications such as point sensors for fundamental spectroscopy, atmospheric chemistry, trace and hazardous gas detection, and biological microscopy.

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

Science.gov (United States)

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Wellhead deliverabilty of natural gas - assembling the evidence. Final report

International Nuclear Information System (INIS)

Hughes, W.R.

1995-09-01

This report presents information about the wellhead delivery of natural gas--the amount of gas the supply industry can produce and deliver to the pipeline. It is designed to help power industry planners evaluate essential aspects of gas supply as part of their overall assessment and utilization of gas-fired power generation. Low prices caused by excess deliverability have led to minimal exploration for new supplies, with the open-quotes bubbleclose quotes of excess deliverability ending. The report examines the facts pertinent to assessing the outlook for deliverability over the intermediate term. It develops deliverability concepts and relates deliverability to reserves and resources. It assesses the available information for measuring and monitoring availability and suggests improvements in available data. The regional outlook for deliverability growth in the Gulf of Mexico and other leading producing regions is also discussed. The report reviews the historical background of present deliverability trends and discusses the industry dynamics that affect development of future deliverability: lead times for increasing deliverability, the declining base of skilled exploration manpower, advancing gas supply technology, and prices required to encourage exploration and development

Room temperature NO2-sensing properties of porous silicon/tungsten oxide nanorods composite

International Nuclear Information System (INIS)

Wei, Yulong; Hu, Ming; Wang, Dengfeng; Zhang, Weiyi; Qin, Yuxiang

2015-01-01

Highlights: • Porous silicon/WO 3 nanorods composite is synthesized via hydrothermal method. • The morphology of WO 3 nanorods depends on the amount of oxalic acid (pH value). • The sensor can detect ppb level NO 2 at room temperature. - Abstract: One-dimensional single crystalline WO 3 nanorods have been successfully synthesized onto the porous silicon substrates by a seed-induced hydrothermal method. The controlled morphology of porous silicon/tungsten oxide nanorods composite was obtained by using oxalic acid as an organic inducer. The reaction was carried out at 180 °C for 2 h. The influence of oxalic acid (pH value) on the morphology of porous silicon/tungsten oxide nanorods composite was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The NO 2 -sensing properties of the sensor based on porous silicon/tungsten oxide nanorods composite were investigated at different temperatures ranging from room temperature (∼25 °C) to 300 °C. At room temperature, the sensor behaved as a typical p-type semiconductor and exhibited high gas response, good repeatability and excellent selectivity characteristics toward NO 2 gas due to its high specific surface area, special structure, and large amounts of oxygen vacancies

Silicon-Film(TM) Solar Cells by a Flexible Manufacturing System: Final Report, 16 April 1998 -- 31 March 2001

Energy Technology Data Exchange (ETDEWEB)

Rand, J.

2002-02-01

This report describes the overall goal to engineer and develop flexible manufacturing methods and equipment to process Silicon-Film solar cells and modules. Three major thrusts of this three-year effort were to: develop a new larger-area (208 mm x 208 mm) Silicon-Film solar cell, the APx-8; construct and operate a new high-throughput wafer-making system; and develop a 15-MW single-thread manufacturing process. Specific technical accomplishments from this period are: Increase solar cell area by 80%, increase the generation capacity of a Silicon-Film wafer-making system by 350%, use a new in-line HF etch system in solar cell production, design and develop an in-line NaOH etch system, eliminate cassettes in solar cell processing, and design a new family of module products.

The preparation method of solid boron solution in silicon carbide in the form of micro powder

International Nuclear Information System (INIS)

Pampuch, R.; Stobierski, L.; Lis, J.; Bialoskorski, J.; Ermer, E.

1993-01-01

The preparation method of solid boron solution in silicon carbide in the form of micro power has been worked out. The method consists in introducing mixture of boron, carbon and silicon and heating in the atmosphere of inert gas to the 1573 K

75 FR 80758 - Storage Reporting Requirements of Interstate and Intrastate Natural Gas Companies

Science.gov (United States)

2010-12-23

...] Storage Reporting Requirements of Interstate and Intrastate Natural Gas Companies December 16, 2010... natural gas pipelines to report semi-annually on their storage activities. This Notice of Inquiry will... reports required of interstate and intrastate natural gas companies pursuant to 18 CFR 284.13(e) and 284...

78 FR 69337 - Greenhouse Gas Reporting Program: Amendments and Confidentiality Determinations for Fluorinated...

Science.gov (United States)

2013-11-19

...-AR78 Greenhouse Gas Reporting Program: Amendments and Confidentiality Determinations for Fluorinated... Greenhouse Gas Reporting Rule. The proposed changes would reduce the level of detail in which emissions were..., please go to the Greenhouse Gas Reporting Rule Program Web site at http://www.epa.gov/climatechange...

Laser wafering for silicon solar

International Nuclear Information System (INIS)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-01-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Laser wafering for silicon solar.

Energy Technology Data Exchange (ETDEWEB)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Visualization of Solution Gas Drive in Viscous Oil, SUPRI TR-126

Energy Technology Data Exchange (ETDEWEB)

George, D.S.; Kovscek, A.R.

2001-07-23

Several experimental studies of solution gas drive are available in this report. Almost all of the studies have used light oil. Solution gas drive behavior, especially in heavy oil reservoirs, is poorly understood. Experiments were performed in which pore-scale solution gas drive phenomena were viewed in water/carbon dioxide and viscous oil/carbon dioxide systems. A new pressure vessel was designed and constructed to house silicon-wafer micromodels that previously operated at low (<3 atm) pressure. The new apparatus is used for the visual studies. Several interesting phenomena were viewed. The repeated nucleation of gas bubbles was observed at a gas-wet site occupied by dirt. Interestingly, the dissolution of a gas bubble into the liquid phase was previously recorded at the same nucleation site. Gas bubbles in both systems grew to span one ore more pore bodies before mobilization. Liquid viscosity affected the ease with which gas bubbles coalesced. More viscous solutions result in slower rates of coalescence. The transport of solid particles on gas-liquid interfaces was also observed.

24% efficient PERL structure silicon solar cells

International Nuclear Information System (INIS)

Zhao, J.; Wang, A.; Green, M.A.

1990-01-01

This paper reports that the performance of silicon solar cells have been significantly improved using an improved PERL (passivated emitter, rear locally-diffused) cell structure. This structure overcomes deficiencies in an earlier PERC (passivated emitter and rear cell) cell structure by locally diffusing boron into contact areas at the rear of the cells. Terrestrial energy conversion efficiencies up to 24% are reported for silicon cells for the first time. Air Mass O efficiencies approach 21%. The first batches of concentrator cells using the new structure have demonstrated significant improvement with 29% efficient concentrator silicon cells expected in the near future

Characteristics of electrostatic gas micro-pump with integrated polyimide passive valves

International Nuclear Information System (INIS)

Han, Jeahyeong; Yeom, Junghoon; Mensing, Glennys; Flachsbart, Bruce; Shannon, Mark A

2012-01-01

We report on the fabrication and characterization of electrostatic gas micro-pumps integrated with polyimide check valves. Touch-mode capacitance actuation, enabled by a fixed silicon electrode and a metal/polyimide diaphragm, creates the suction and push-out of the ambient gas; the gas flow is rectified by the check valves located at the inlet and outlet of the pump. The fabricated pumps were tested with various actuation voltages at different frequencies and duty cycles; an emphasis was placed on investigating the effect of valve flow conductance on the gas pumping characteristics. The pump with higher valve conductance could increase the operating frequency of the pump and affect the pumping characteristics from a pulsating flow to a continuous flow, leading to a higher gas flow rate. This electrostatic pump has a flow control resolution of 1 µL min −1 ; it could generate a gas flow up to 106 µL min −1 . (paper)

Gas phase photocatalytic water splitting in silicon based µ-reactors

DEFF Research Database (Denmark)

Dionigi, Fabio; Vesborg, Peter Christian Kjærgaard

is discussed in the beginning of this thesis followed by an introduction to the basics of photocatalysis. The experimental setup used in this study and the silicon based μ-reactor technology is described afterwards. Almost the entire work presented in the thesis has been done loading the catalysts in these μ...

Accurate control of oxygen level in cells during culture on silicone rubber membranes with application to stem cell differentiation.

Science.gov (United States)

Powers, Daryl E; Millman, Jeffrey R; Bonner-Weir, Susan; Rappel, Michael J; Colton, Clark K

2010-01-01

Oxygen level in mammalian cell culture is often controlled by placing culture vessels in humidified incubators with a defined gas phase partial pressure of oxygen (pO(2gas)). Because the cells are consuming oxygen supplied by diffusion, a difference between pO(2gas) and that experienced by the cells (pO(2cell)) arises, which is maximal when cells are cultured in vessels with little or no oxygen permeability. Here, we demonstrate theoretically that highly oxygen-permeable silicone rubber membranes can be used to control pO(2cell) during culture of cells in monolayers and aggregates much more accurately and can achieve more rapid transient response following a disturbance than on polystyrene and fluorinated ethylene-propylene copolymer membranes. Cell attachment on silicone rubber was achieved by physical adsorption of fibronectin or Matrigel. We use these membranes for the differentiation of mouse embryonic stem cells to cardiomyocytes and compare the results with culture on polystyrene or on silicone rubber on top of polystyrene. The fraction of cells that are cardiomyocyte-like increases with decreasing pO(2) only when using oxygen-permeable silicone membrane-based dishs, which contract on silicone rubber but not polystyrene. The high permeability of silicone rubber results in pO(2cell) being equal to pO(2gas) at the tissue-membrane interface. This, together with geometric information from histological sections, facilitates development of a model from which the pO(2) distribution within the resulting aggregates is computed. Silicone rubber membranes have significant advantages over polystyrene in controlling pO(2cell), and these results suggest they are a valuable tool for investigating pO(2) effects in many applications, such as stem cell differentiation. Copyright 2009 American Institute of Chemical Engineers

Acute Immunologic Reaction to Silicone Breast Implant after Mastectomy and Immediate Reconstruction: Case Report and Review of the Literature

Directory of Open Access Journals (Sweden)

Massoome Najafi

2014-08-01

Full Text Available Background: Since the introduction of silicone based medical devices in to clinical practice, several reports appeared in the medical literature regarding their adverse effects. However, there are few reports of immunologic reactions to these implants.Case presentation: A case of systemic reaction to a breast implant inserted for immediate breast reconstruction in a breast cancer patient is presented. The patient developed fever and skin rash two months after the surgery. Investigations disclosed no infectious origin for the fever and a dramatic response to steroid therapy was observed.Conclusion: Immunologic reaction should be considered in case of systemic signs and symptoms after silicone breast implant placement as a rare complication. 

Reduced thermal conductivity of isotopically modulated silicon multilayer structures

DEFF Research Database (Denmark)

Bracht, H.; Wehmeier, N.; Eon, S.

2012-01-01

We report measurements of the thermal conductivity of isotopically modulated silicon that consists of alternating layers of highly enriched silicon-28 and silicon-29. A reduced thermal conductivity of the isotopically modulated silicon compared to natural silicon was measured by means of time......-resolved x-ray scattering. Comparison of the experimental results to numerical solutions of the corresponding heat diffusion equations reveals a factor of three lower thermal conductivity of the isotope structure compared to natural Si. Our results demonstrate that the thermal conductivity of silicon can...

High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

2011-09-16

A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

Formation of nanocrystals embedded in a silicon nitride film at a low temperature ({<=}200 deg. C)

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyoung-Min; Kim, Tae-Hwan [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of); Hong, Wan-Shick [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of)], E-mail: wshong@uos.ac.kr

2008-12-15

Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH{sub 4}, NH{sub 3} and H{sub 2} was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H{sub 2}/SiH{sub 4} mixture ratio that was higher than four.

Study on Silicon detectors

International Nuclear Information System (INIS)

Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

1990-01-01

Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

Silicon Micropore-Based Parallel Plate Membrane Oxygenator.

Science.gov (United States)

Dharia, Ajay; Abada, Emily; Feinberg, Benjamin; Yeager, Torin; Moses, Willieford; Park, Jaehyun; Blaha, Charles; Wright, Nathan; Padilla, Benjamin; Roy, Shuvo

2018-02-01

Extracorporeal membrane oxygenation (ECMO) is a life support system that circulates the blood through an oxygenating system to temporarily (days to months) support heart or lung function during cardiopulmonary failure until organ recovery or replacement. Currently, the need for high levels of systemic anticoagulation and the risk for bleeding are main drawbacks of ECMO that can be addressed with a redesigned ECMO system. Our lab has developed an approach using microelectromechanical systems (MEMS) fabrication techniques to create novel gas exchange membranes consisting of a rigid silicon micropore membrane (SμM) support structure bonded to a thin film of gas-permeable polydimethylsiloxane (PDMS). This study details the fabrication process to create silicon membranes with highly uniform micropores that have a high level of pattern fidelity. The oxygen transport across these membranes was tested in a simple water-based bench-top set-up as well in a porcine in vivo model. It was determined that the mass transfer coefficient for the system using SµM-PDMS membranes was 3.03 ± 0.42 mL O 2 min -1 m -2 cm Hg -1 with pure water and 1.71 ± 1.03 mL O 2 min -1 m -2 cm Hg -1 with blood. An analytic model to predict gas transport was developed using data from the bench-top experiments and validated with in vivo testing. This was a proof of concept study showing adequate oxygen transport across a parallel plate SµM-PDMS membrane when used as a membrane oxygenator. This work establishes the tools and the equipoise to develop future generations of silicon micropore membrane oxygenators. © 2017 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Damage effects and mechanisms of proton irradiation on methyl silicone rubber

International Nuclear Information System (INIS)

Zhang, L.X.; He, Sh.Y.; Xu, Zh.; Wei, Q.

2004-01-01

A study was performed on the damage effects and mechanisms of proton irradiation with 150 keV energy to space-grade methyl silicone rubber. The changes in surface morphology, mechanical properties, infrared attenuated total reflection (ATR) spectrum, mass spectrum and pyrolysis gas chromatography-mass spectrum (PYGC-MS) indicated that, under lower fluence, the proton radiation would induce cross-linking effect, resulting in an increase in tensile strengths and hardness of the methyl silicon rubber. However, under higher proton fluence, the radiation-induced degradation, which decreased the tensile strengths and hardness, became a dominant effect. A macromolecular-network destruction model for the silicone rubber radiated with the protons was proposed

Government information report to the parliament. The gas distribution in France

International Nuclear Information System (INIS)

2002-11-01

This report evaluates the gas distribution state in France and presents the forecasts of the gas energy use development by the gas utilities users. In this framework the following points are presented: the juridical aspects of the gas distribution, the national plan of distribution, the new legislation occurring from the gas market deregulation and some statistical data on the gas use, consumption and demand in France. (A.L.B.)

The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions

Science.gov (United States)

Ieshkin, A. E.; Kireev, D. S.; Ermakov, Yu. A.; Trifonov, A. S.; Presnov, D. E.; Garshev, A. V.; Anufriev, Yu. V.; Prokhorova, I. G.; Krupenin, V. A.; Chernysh, V. S.

2018-04-01

The gas cluster ion beam technique was used for the silicon carbide crystal surface smoothing. The effect of processing by two inert cluster ions, argon and xenon, was quantitatively compared. While argon is a standard element for GCIB, results for xenon clusters were not reported yet. Scanning probe microscopy and high resolution transmission electron microscopy techniques were used for the analysis of the surface roughness and surface crystal layer quality. The gas cluster ion beam processing results in surface relief smoothing down to average roughness about 1 nm for both elements. It was shown that xenon as the working gas is more effective: sputtering rate for xenon clusters is 2.5 times higher than for argon at the same beam energy. High resolution transmission electron microscopy analysis of the surface defect layer gives values of 7 ± 2 nm and 8 ± 2 nm for treatment with argon and xenon clusters.

Silicon solar cells with high efficiencies. Final report; Silicium-Solarzellen mit hoechsten Wirkungsgraden. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Wettling, W.; Knobloch, J.; Glunz, S.W.; Henninger, V.; Kamerewerd, F.J.; Koester, B.; Leimenstoll, A.; Schaeffer, E.; Schumacher, J.; Sterk, S.; Warta, W.

1996-06-01

In this report the basic activities for the development of the silicon high efficiency solar cell technology are described. The project had two main goals: (i) The improvement of efficiencies using a systematic optimization of all cell parameters and technology steps and (ii) the simplification of the technology towards the possibilities of an industrial production, keeping the cell efficiency at a high level. Starting from the LBSF technology, developed at Fraunhofer ISE, the reduction of all loss mechanisms led to efficiencies up to 22.5% on FZ-silicon. Using a modification of this technology efficiencies of up to 21.7% have been reached on Cz-silicon. Even after the reduction of the number of photolithographic steps from six to three efficiencies up to 21.6% on FZ- and 19.5% on Cz-silicon have been obtained. These are best values in an international comparison. (orig.) [Deutsch] In diesem Projektbericht werden grundlegende Arbeiten zur Entwicklung der Silicium-`Highefficiency`-Solarzellentechnologie beschrieben. Das Projekt hatte zwei Hauptziele: (i) Die Erhoehung der Wirkungsgrade durch eine systematische Optimierung aller Zellparameter und aller Technologieschritte und (ii) die Vereinfachung der Technologie unter Beibehaltung sehr hoher Wirkungsgrade mit dem Ziel einer Annaeherung an die Moeglichkeiten der Industriefertigung. Ausgehend von der im Fraunhofer ISE entwickelten LBSF-Technologie gelang es durch Reduzierung aller Verlustmechanismen, Wirkungsgrade bis zu 22.5% auf FZ-Silicium zu erreichen. Nach Anpassung der Technologie wurden auf Cz-Silicium Wirkungsgrade bis 21.7% erzielt. Ein von sechs auf drei Fotomaskenschritte reduzierter Prozess erzielte immerhin noch Werte bis 21.6% auf FZ- und 19.5% auf Cz-Material. Alle dieser Werte stellen im internationalen Vergleich Spitzenleistungen dar. (orig.)

Laser-beam-induced current mapping evaluation of porous silicon-based passivation in polycrystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Rabha, M. Ben; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia); Dimassi, W.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de photovoltaique, des semiconducteurs et des nanostructures, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia)

2009-05-15

In the present work, we report on the effect of introducing a superficial porous silicon (PS) layer on the performance of polycrystalline silicon (pc-Si) solar cells. Laser-beam-induced current (LBIC) mapping shows that the PS treatment on the emitter of pc-Si solar cells improves their quantum response and reduce the grain boundaries (GBs) activity. After the porous silicon treatment, mapping investigation shows an enhancement of the LBIC and the internal quantum efficiency (IQE), due to an improvement of the minority carrier diffusion length and the passivation of recombination centers at the GBs as compared to the reference substrate. It was quantitatively shown that porous silicon treatment can passivate both the grains and GBs. (author)

Gas in the former Soviet Union. A special report

International Nuclear Information System (INIS)

Anon.

1994-01-01

This special report includes 13 papers on various aspects of the natural gas industry and its development in the republics of the former Soviet Union and a full listing of all the Russian oil and gas fields. Separate abstracts have been prepared for 9 papers. (UK)

Production of polycrystalline silicon by fluidized-bed-problems and recent progress of study

Energy Technology Data Exchange (ETDEWEB)

Kojima, Toshinori

1988-10-01

Concerning the production of polycrystalline silicon from SiH/sub 4/ by applying fluidized bed reaction, recent progress of study, problems involved, and countermeasures to them were reported. For the experiment, stainless tube with 50mm inside diameter attached with electric heater on the wall as auxillary heat source was used to measure the temperature distribution in the bed. As the diluting gas, hydrogen and argon were used to investigate the effect of diluent gas and it was understood that sort of diluent gas affected on the crogging and reaction rate. It was indicated that, in the fluidized bed reaction which gave large depositing area and high productivity, contamination was easily occurred. Observation of fine powder by electronic-microscope revealed that different diluent caused the difference of fine powder shape and that the higher the reaction temperature the more fine powder was produced. Crogging condition was affected by tower diameter, together with temperature and fluidizing conditions. In addition, two recent patents were introduced. 11 references, 10 figures.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Silicon coating treatment to improve high temperature corrosion resistance of 9%Cr steels

International Nuclear Information System (INIS)

Hill, M.P.

1989-01-01

A silicon coating process is described which confers good protection on 9%Cr steels and alloys in CO 2 based atmospheres at high temperatures and pressures. The coatings are formed by decomposition of silane at temperatures above 720 K. Protective layers are typically up to 1 μm thick. The optimum coating conditions are discussed. The chemical state of the coatings has been investigated by X-ray photoelectron spectroscopy and has demonstrated the importance of avoiding silicon oxide formation during processing. Corrosion testing has been carried out for extended periods, up to 20 000 h, at temperatures between 753 and 853 K, in a simulated advanced gas cooled reactor gas at 4 MPa pressure. Benefit factors of up to 60 times have been measured for 9%Cr steels. Even higher values have been measured for 9Cr-Fe binary alloy on which a 1 μm coating was sufficient to eliminate significant oxidation over 19 000 h except at the specimen edges. The mechanism of protection is discussed. It is suggested that a silicon surface coating for protecting steels from high temperature corrosion has some advantages over adding silicon to the bulk metal. (author)

Synthesis of silicon nanowires and novel nano-dendrite structures

International Nuclear Information System (INIS)

Sinha, Saion; Gao Bo; Zhou, Otto

2004-01-01

We report a study on the effects of various parameters on the synthesis of silicon nanowires (5--50 nm in diameter) by pulsed laser ablation. A novel silicon nanodendrite structure is observed by changing some of the growth parameters abruptly. This growth mechanism is explained by a qualitative model. These nanodendrites show a promise of being used as a template in fabricating nanocircuits. Thermal quantum confinement effects were also observed on the silicon nanowires and have been reported

Gas-lift pumps for flowing and purifying molten silicon

Science.gov (United States)

Kellerman, Peter L.; Carlson, Frederick

2016-02-23

The embodiments herein relate to a sheet production apparatus. A vessel is configured to hold a melt of a material and a cooling plate is disposed proximate the melt. This cooling plate configured to form a sheet of the material on the melt. A pump is used. In one instance, this pump includes a gas source and a conduit in fluid communication with the gas source. In another instance, this pump injects a gas into a melt. The gas can raise the melt or provide momentum to the melt.

The French wholesale electricity and natural gas markets. 2008 report

International Nuclear Information System (INIS)

2009-12-01

This second report on the operation of French wholesale electricity and natural gas markets deals with CRE wholesale market surveillance activities. It follows on from the different work undertaken or announced in the first surveillance report and in the proceedings of the CRE deliberation held on the 8 January 2009. It capitalizes on the experience gained in this area since the Law of the 7 December 2006 gave the CRE market surveillance powers. It is also based on feedback from discussions and interaction with the different stakeholders, through the public consultations held by CRE in 2008 and 2009. market surveillance applies to: - electricity and gas, - bilateral transactions, trading on exchanges and cross-border transactions, - all maturities, from short-term markets to long-term contracts, - all French wholesale market counter-parties, whatever nationality they may have, - contracts for physical delivery, as well as to financial products. The Law also allows extensive surveillance of market participants' behaviour, in that the CRE can oversee not only transactions between operators but also their bids and the correspondence between the prices charged and the position of each operator. In order to address these different subjects, the electricity and gas sections of this report are divided into four main chapters dealing with the development of trading, wholesale market price trends, the fundamentals (generation, infrastructures) and, finally, the analysis of electricity transactions and the supply of alternative gas operators. Contents: A - Methodology notice, Introduction, Summary of the report; B - Section 1 - Wholesale electricity markets: The development of the main wholesale market segments, Monitoring of price formation in France in terms of fundamentals and in comparison with the main interconnected European markets, Analysis and transparency of generation, The analysis of transactions; C - Section 2 - Wholesale natural gas markets: The

Silicon (100)/SiO2 by XPS

Energy Technology Data Exchange (ETDEWEB)

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Low-temperature synthesis of homogeneous nanocrystalline cubic silicon carbide films

International Nuclear Information System (INIS)

Cheng Qijin; Xu, S.

2007-01-01

Silicon carbide films are fabricated by inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane heavily diluted with hydrogen at a low substrate temperature of 300 deg. C. Fourier transform infrared absorption spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy analyses show that homogeneous nanocrystalline cubic silicon carbide (3C-SiC) films can be synthesized at an appropriate silane fraction X[100%xsilane flow(SCCM)/silane+methane flow(SCCM)] in the gas mixture. The achievement of homogeneous nanocrystalline 3C-SiC films at a low substrate temperature of 300 deg. C is a synergy of a low deposition pressure (22 mTorr), high inductive rf power (2000 W), heavy dilution of feedstock gases silane and methane with hydrogen, and appropriate silane fractions X (X≤33%) in the gas mixture employed in our experiments

Synthesis and investigation of silicon carbide nanowires by HFCVD ...

Indian Academy of Sciences (India)

Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour .... −5. Torr by mechanical and dif- fusion vacuum pumps, then high purity H2 gas was fed into it. ... to standard PDF card numbers of 01-074-2307 and 01-.

Gas microstrip chambers

International Nuclear Information System (INIS)

McIntyre, P.M.; Barasch, E.F.; Bowcock, T.J.V.; Demroff, H.P.; Elliott, S.M.; Howe, M.R.; Lee, B.; Mazumdar, T.K.; Pang, Y.; Smith, D.D.; Wahl, J.; Wu, Y.; Yue, W.K.; Gaedke, R.M.; Vanstraelen, G.

1992-01-01

The gas microstrip chamber has been developed from concept to experimental system during the past three years. A pattern of anode and grid lines are microfabricated onto a dielectric substrate and configured as a high-resolution MWPC. Four recent developments are described: Suitable plastic substrates and lithography techniques for large-area chambers; non-planar silicon-based chambers for 20 μm resolution; integrated on-board synchronous front-end electronics and data buffering; and a porous silicon active cathode for enhanced efficiency and time response. The microstrip chamber appears to be a promising technology for applications in microvertex, tracking spectrometer, muon spectrometer, and transition radiation detection. (orig.)

Energy from gas hydrates - assessing the opportunities and challenges for Canada: report of the expert panel on gas hydrates

International Nuclear Information System (INIS)

2008-09-01

Gas hydrates form when water and natural gas combine at low temperatures and high pressures in regions of permafrost and in marine subseafloor sediments. Estimates suggest that the total amount of natural gas bound in hydrate form may exceed all conventional gas resources, or even the amount of all combined hydrocarbon energy. Gas from gas hydrate could provide a potentially vast new source of energy to offset declining supplies of conventional natural gas in North America and to provide greater energy security for countries such as Japan and India that have limited domestic sources. However, complex issues would need to be addressed if gas hydrate were to become a large part of the energy future of Canada. Natural Resources Canada asked the Council of Canadian Academies to assemble a panel of experts to examine the challenges for an acceptable operational extraction of gas hydrates in Canada. This report presented an overview of relevant contextual background, including some basic science; the medium-term outlook for supply and demand in markets for natural gas; broad environmental issues related to gas hydrate in its natural state and as a fuel; and an overview of Canada's contribution to knowledge about gas hydrate in the context of ongoing international research activity. The report also presented current information on the subject and what would be required to delineate and quantify the resource. Techniques for extracting gas from gas hydrate were also outlined. The report also addressed safety issues related to gas hydrate dissociation during drilling operations or release into the atmosphere; the environmental issues associated with potential leakage of methane into the atmosphere and with the large volumes of water produced during gas hydrate dissociation; and jurisdictional and local community issues that would need to be resolved in order to proceed with the commercial exploitation of gas hydrate. It was concluded that there does not appear to be

77 FR 10373 - Greenhouse Gas Reporting Program: Electronics Manufacturing: Revisions to Heat Transfer Fluid...

Science.gov (United States)

2012-02-22

... Greenhouse Gas Reporting Program: Electronics Manufacturing: Revisions to Heat Transfer Fluid Provisions... technical revisions to the electronics manufacturing source category of the Greenhouse Gas Reporting Rule... final rule will also be available through the WWW on the EPA's Greenhouse Gas Reporting Program Web site...

Carrier gas effects on aluminum-catalyzed nanowire growth

International Nuclear Information System (INIS)

Ke, Yue; Hainey, Mel Jr; Won, Dongjin; Weng, Xiaojun; Eichfeld, Sarah M; Redwing, Joan M

2016-01-01

Aluminum-catalyzed silicon nanowire growth under low-pressure chemical vapor deposition conditions requires higher reactor pressures than gold-catalyzed growth, but the reasons for this difference are not well understood. In this study, the effects of reactor pressure and hydrogen partial pressure on silicon nanowire growth using an aluminum catalyst were studied by growing nanowires in hydrogen and hydrogen/nitrogen carrier gas mixtures at different total reactor pressures. Nanowires grown in the nitrogen/hydrogen mixture have faceted catalyst droplet tips, minimal evidence of aluminum diffusion from the tip down the nanowire sidewalls, and significant vapor–solid deposition of silicon on the sidewalls. In comparison, wires grown in pure hydrogen show less well-defined tips, evidence of aluminum diffusion down the nanowire sidewalls at increasing reactor pressures and reduced vapor–solid deposition of silicon on the sidewalls. The results are explained in terms of a model wherein the hydrogen partial pressure plays a critical role in aluminum-catalyzed nanowire growth by controlling hydrogen termination of the silicon nanowire sidewalls. For a given reactor pressure, increased hydrogen partial pressures increase the extent of hydrogen termination of the sidewalls which suppresses SiH_4 adsorption thereby reducing vapor–solid deposition of silicon but increases the surface diffusion length of aluminum. Conversely, lower hydrogen partial pressures reduce the hydrogen termination and also increase the extent of SiH_4 gas phase decomposition, shifting the nanowire growth window to lower growth temperatures and silane partial pressures. (paper)

Proton irradiation effects of amorphous silicon solar cell for solar power satellite

Energy Technology Data Exchange (ETDEWEB)

Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

1997-03-01

Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

RBS/channeling analysis of hydrogen-implanted single crystals of FZ silicon and 6H silicon

International Nuclear Information System (INIS)

Irwin, R.B.

1984-01-01

Single crystals of FZ silicon and 6H silicon carbide were implanted with hydrogen ions (50 and 80 keV, respectively) to fluences from 2 x 10 16 H + /cm 2 to 2 x 10 18 H+/cm 2 . The implantations were carried out at three temperatures: approx.95K, 300 K, and approx.800 K. Swelling of the samples was measured by surface profilometry. RBS/channeling was used to obtain the damage profiles and to determine the amount of hydrogen retained in the lattice. The damage profiles are centered around X/sub m/ for the implants into silicon and around R/sub p/ for silicon carbide. For silicon carbide implanted at 95 K and 300 K and for silicon implanted at 95 K, the peak damage region is amorphous for fluences above 8 x 10 16 H + /cm 2 , 4 x 10 17 H + /cm 2 , and 2 x 10 17 H + /cm 2 , respectively. Silicon implanted at 300 and 800 K and silicon carbide implanted at 800 K remain crystalline up to fluences of 1 x 10 18 H + /cm 2 . The channeling damage results agree with previously reported TEM and electron diffraction data. The predictions of a simple disorder-accumulation model with a linear annealing term explains qualitatively the observed damage profiles in silicon carbide. Quantitatively, however, the model predicts faster development of the damage profiles than is observed at low fluences in both silicon and silicon carbide. For samples implanted at 300 and 800 K, the model also predicts substantially less peak disorder than is observed. The effect of the surface, the retained hydrogen, the shape of S/sub D/(X), and the need for a nonlinear annealing term may be responsible for the discrepancy

Hemispherical cavities on silicon substrates: an overview of micro fabrication techniques

Science.gov (United States)

Poncelet, O.; Rasson, J.; Tuyaerts, R.; Coulombier, M.; Kotipalli, R.; Raskin, J.-P.; Francis, L. A.

2018-04-01

Hemispherical photonic crystals found in species like Papilio blumei and Cicendella chinensis have inspired new applications like anti-counterfeiting devices and gas sensors. In this work, we investigate and compare four different ways to micro fabricate such hemispherical cavities: using colloids as template, by wet (HNA) or dry (XeF2) isotropic etching of silicon and by electrochemical etching of silicon. The shape and the roughness of the obtained cavities have been discussed and the pros/cons for each method are highlighted.

Amphiphilic silicone architectures via anaerobic thiol-ene chemistry.

Science.gov (United States)

Keddie, Daniel J; Grande, John B; Gonzaga, Ferdinand; Brook, Michael A; Dargaville, Tim R

2011-11-18

Despite broad application, few silicone-based surfactants of known structure or, therefore, surfactancy have been prepared because of an absence of selective routes and instability of silicones to acid and base. Herein the synthesis of a library of explicit silicone-poly(ethylene glycol) (PEG) materials is reported. Pure silicone fragments were generated by the B(C(6)F(5))(3)-catalyzed condensation of alkoxysilanes and vinyl-functionalized hydrosilanes. The resulting pure products were coupled to thiol-terminated PEG materials using photogenerated radicals under anaerobic conditions.

Silicon germanium (SiGe) radioisotope thermoelectric generator (RTG) program for space missions. Nineteenth technical progress report, December 1980-January 1981

International Nuclear Information System (INIS)

1981-01-01

Work accomplished during the reporting period on the DOE Silicon Germanium RTG Program, Contract DE-AC01-79ET-32043 is described. This program consists of the following three tasks: multi-hundred watt RTG for the Galileo probe mission; reestablishment of silicon germanium unicouple capability; and general purpose heat source RTG for the international solar polar and Galileo orbiter missions. Details of program progress for each task, including a milestone schedule and a discussion of current problem areas (if any) are presented

18O isotopic tracer studies of silicon oxidation in dry oxygen

International Nuclear Information System (INIS)

Han, C.J.

1986-01-01

Oxidation of silicon in dry oxygen has been an important process in the integrated circuit industry for making gate insulators on metal-oxide-semiconductory (MOS) devices. This work examines this process using isotopic tracers of oxygen to determine the transport mechanisms of oxygen through silicon dioxide. Oxides were grown sequentially using mass-16 and mass-18 oxygen gas sources to label the oxygen molecules from each step. The resulting oxides are analyzed using secondary ion mass spectrometry (SIMS). The results of these analyses suggest two oxidant species are present during the oxidation, each diffuses and oxidizes separately during the process. A model from this finding using a sum of two linear-parabolic growth rates, each representing the growth rate from one of the oxidants, describes the reported oxidation kinetics in the literature closely. A fit of this relationship reveals excellent fits to the data for oxide thicknesses ranging from 30 A to 1 μm and for temperatures ranging from 800 to 1200 0 C. The mass-18 oxygen tracers also enable a direct observation of the oxygen solubility in the silicon dioxide during a dry oxidation process. The SIMS profiles establish a maximum solubility for interstitial oxygen at 1000 0 C at 2 x 10 20 cm -3 . Furthermore, the mass-18 oxygen profiles show negligible network diffusion during an 1000 0 C oxidation

Reactive Melt Infiltration Of Silicon Into Porous Carbon

Science.gov (United States)

Behrendt, Donald R.; Singh, Mrityunjay

1994-01-01

Report describes study of synthesis of silicon carbide and related ceramics by reactive melt infiltration of silicon and silicon/molybdenum alloys into porous carbon preforms. Reactive melt infiltration has potential for making components in nearly net shape, performed in less time and at lower temperature. Object of study to determine effect of initial pore volume fraction, pore size, and infiltration material on quality of resultant product.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Case Report: Facial and eye injury following a fridge cylinder gas explosion

Directory of Open Access Journals (Sweden)

Monsudi Kehinde Fasasi

2017-11-01

Full Text Available Fridge cylinders contain liquefied petroleum gas (LPG, an inflammable gas of mixture of propane and butane [1]. It’s colourless but odourised to give warning during leakage. Injury from accidental fridge cylinder explosion is similar to any other blast injuries in terms of the release of hot gases, blast wave and metal fragments resulting in extensive skin burns, abrasions, penetrating injury and tissue loss [2-4]. Ocular trauma following gas cylinder explosion is rare however, Babar et al reported 20% of ocular trauma to be secondary to gas cylinder and battery explosion [2]. To our knowledge, this is the first case of facial and eye injury following a fridge cylinder gas explosion reported in the literature.

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

International Nuclear Information System (INIS)

Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

2006-01-01

Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

Report on the oil and gas industry in 2011

International Nuclear Information System (INIS)

Venturini, Isabelle; Hesske, Philip; Welter-Nicol, Cecile; Korman, Bernard; Wermelinger, Elea; Gouge, Patrick; Balian, Armelle; Guichaoua, Sabine; Levaillant, Elise; Ripaux, Marion; Baumont, Thierry; Fondeville, Louis; Lamy, Jean-Michel; Delvincourt, Thibaud; Pertuiset, Thomas; Quintaine, Thierry; Miraval, Bruno; Cesari, Vartouhie

2012-01-01

Illustrated by several graphs and tables, this report first proposes an overview of international oil and gas markets and supplies: markets, exploration, challenges faced by European supplies, and French hydrocarbon imports. It comments oil exploration and production activities in France, refining activities and activities in the field of substitution fuels. The next part addresses the French oil and gas logistics: domestic transports of oil products, oil product storage infrastructures, strategic storage, and gas infrastructures. The last part addresses the final consumption: consumption, distribution, fuel quality, prices, and tax policy

Achievement report for fiscal 1999 on the development of silicon manufacturing process rationalizing energy utilization. Research and study on analysis to put silicon raw material manufacturing technology for solar cells into practical use; 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

In order to support the development and practical application of a mass production technology for manufacturing silicon raw materials for solar cells, research and study were performed on trends of developing the related technologies, and movements in markets and industries. This paper reports the achievements thereof in fiscal 1999. Markets for solar cells are growing favorably, and the worldwide solar cell production in 1999 was 200 MWp, of which 80% or more is occupied by crystalline silicon solar cell. While development of the manufacturing technology for SOG-Si mass-production is in the stage of operation research of pilot plants, it has been verified that problems of impurity contamination was resolved, and high-purity silicon can be manufactured. In developing the silicon scrap utilization technology and a technology to integrate silicon refinement with casting, a conversion efficiency of 14% or higher was acquired in prototype sample substrates. It has been verified that a variety of raw materials can be dealt with by using the above technology, which has a possibility of cost reduction. In developing a substrate manufacturing technology, a great progress has been made in enhancing the productivity and reducing the cost by developing the continuous casting in the electromagnetic casting and the automation technology. (NEDO)

Silicon Microleaks for Inlets of Mass Spectrometers

Science.gov (United States)

Harpold, Dan; Hasso, Niemann; Jamieson, Brian G.; Lynch, Bernard A.

2009-01-01

Microleaks for inlets of mass spectrometers used to analyze atmospheric gases can be fabricated in silicon wafers by means of photolithography, etching, and other techniques that are commonly used in the manufacture of integrated circuits and microelectromechanical systems. The microleaks serve to limit the flows of the gases into the mass-spectrometer vacuums to specified very small flow rates consistent with the capacities of the spectrometer vacuum pumps. There is a need to be able to precisely tailor the dimensions of each microleak so as to tailor its conductance to a precise low value. (As used here, "conductance" signifies the ratio between the rate of flow in the leak and the pressure drop from the upstream to the downstream end of the leak.) To date, microleaks have been made, variously, of crimped metal tubes, pulled glass tubes, or frits. Crimped-metal and pulled-glass-tube microleaks cannot readily be fabricated repeatably to precise dimensions and are susceptible to clogging with droplets or particles. Frits tend to be differentially chemically reactive with various gas constituents and, hence, to distort the gas mixtures to be analyzed. The present approach involving microfabrication in silicon largely overcomes the disadvantages of the prior approaches.

Surface wave photonic device based on porous silicon multilayers

International Nuclear Information System (INIS)

Guillermain, E.; Lysenko, V.; Benyattou, T.

2006-01-01

Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

A Heat and Mass Transfer Model of a Silicon Pilot Furnace

Science.gov (United States)

Sloman, Benjamin M.; Please, Colin P.; Van Gorder, Robert A.; Valderhaug, Aasgeir M.; Birkeland, Rolf G.; Wegge, Harald

2017-10-01

The most common technological route for metallurgical silicon production is to feed quartz and a carbon source ( e.g., coal, coke, or charcoal) into submerged-arc furnaces, which use electrodes as electrical conductors. We develop a mathematical model of a silicon furnace. A continuum approach is taken, and we derive from first principles the equations governing the time evolution of chemical concentrations, gas partial pressures, velocity, and temperature within a one-dimensional vertical section of a furnace. Numerical simulations are obtained for this model and are shown to compare favorably with experimental results obtained using silicon pilot furnaces. A rising interface is shown to exist at the base of the charge, with motion caused by the heating of the pilot furnace. We find that more reactive carbon reduces the silicon monoxide losses, while reducing the carbon content in the raw material mixture causes greater solid and liquid material to build-up in the charge region, indicative of crust formation (which can be detrimental to the silicon production process). We also comment on how the various findings could be relevant for industrial operations.

Imaging, structural, and chemical analysis of silicon nanowires

International Nuclear Information System (INIS)

Barsotti, R.J. Jr.; Fischer, J.E.; Lee, C.H.; Mahmood, J.; Adu, C.K.W.; Eklund, P.C.

2002-01-01

Laser ablation has been used to grow silicon nanowires with an average silicon crystal core diameter of 6.7 nm±2.9 nm surrounded by an amorphous SiO x sheath of 1-2 nm, the smallest silicon wires reported in the literature. Imaging, chemical, and structural analysis of these wires are reported. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen. Suggestions for controlled synthesis based on these growth mechanisms are made

Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

Energy Technology Data Exchange (ETDEWEB)

Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

1993-05-01

This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

Effect of neutron irradiation on p-type silicon

International Nuclear Information System (INIS)

Sopko, B.

1973-01-01

The possibilities are discussed of silicon isotope reactions with neutrons of all energies. In the reactions, 30 Si is converted to a stable phosphorus isotope forming n-type impurities in silicon. The above reactions proceed as a result of thermal neutron irradiation. An experiment is reported involving irradiation of two p-type silicon single crystals having a specific resistance of 2000 ohm.cm and 5000 to 20 000 ohm.cm, respectively, which changed as a result of irradiation into n-type silicon with a given specific resistance. The specific resistance may be pre-calculated from the concentration of impurities and the time of irradiation. The effects of irradiation on other silicon parameters and thus on the suitability of silicon for the manufacture of semiconductor elements are discussed. (J.K.)

Final report on unconventional gas in Europe

Energy Technology Data Exchange (ETDEWEB)

NONE

2011-11-15

The main purpose of the study on the title subject is to analyse how the relevant applicable European legal framework, including environmental law, is applied to the licensing/authorisation and operational permitting for prospection, exploration and production/exploitation of shale gas based on a sample of four Member States, i.e. Poland, France, Germany and Sweden. It is, however, not purpose of the study to assess whether Member State legislation based on EU legislation has been properly transposed. This study focuses on shale gas exploration, because shale gas is the type of unconventional gas most discussed and contentious currently. Also, compared to tight gas and coal bed methane, relatively less experience exists in Europe for shale formations as new source of natural gas. The focus on exploration is due to the stage of projects in Europe. No commercial scale shale gas exploitation has taken place yet and it is only expected in a few years time. Nevertheless, this study also takes into account a possible future production phase and especially analyses legal issues especially related to the transfer from exploration to production stage. As regards areas of law to be studied, the focus is the 'core' licensing and permitting process. Given the importance of environmental law in the area of shale gas exploration and production, it is included as an integral part of the study. However, within the scope of this study it is not possible to perform a thorough assessment of the appropriateness of the EU environmental legislation. Nevertheless, the present report describes and analyses EU environmental legislation which was assumed to be of most relevance for shale gas projects, especially as regards its interface with the 'core' licensing and permitting processes. Thereby it contributes to further efforts to assess the appropriateness of the EU legal framework especially with a view to a future production phase and the challenge to ensure a high

Thin film silicon solar cells: advanced processing and characterization - Final report

Energy Technology Data Exchange (ETDEWEB)

Ballif, Ch.

2008-04-15

This final report elaborated for the Swiss Federal Office of Energy (SFOE) takes a look at the results of a project carried out at the photovoltaics laboratory at the University of Neuchatel in Switzerland. The project aimed to demonstrate the production of high-efficiency thin-film silicon devices on flexible substrates using low cost processes. New ways of improving processing and characterisation are examined. The process and manufacturing know-how necessary to provide support for industrial partners within the framework of further projects is discussed. The authors state that the efficiency of most devices was significantly improved, both on glass substrates and on flexible plastic foils. The process reproducibility was also improved and the interactions between the different layers in the device are now said to be better understood. The report presents the results obtained and discusses substrate materials, transparent conductors, defect analyses and new characterisation tools. Finally, the laboratory infrastructure is described.

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Suitability of selected free-gas and dissolved-gas sampling containers for carbon isotopic analysis.

Science.gov (United States)

Eby, P; Gibson, J J; Yi, Y

2015-07-15

Storage trials were conducted for 2 to 3 months using a hydrocarbon and carbon dioxide gas mixture with known carbon isotopic composition to simulate typical hold times for gas samples prior to isotopic analysis. A range of containers (both pierced and unpierced) was periodically sampled to test for δ(13)C isotopic fractionation. Seventeen containers were tested for free-gas storage (20°C, 1 atm pressure) and 7 containers were tested for dissolved-gas storage, the latter prepared by bubbling free gas through tap water until saturated (20°C, 1 atm) and then preserved to avoid biological activity by acidifying to pH 2 with phosphoric acid and stored in the dark at 5°C. Samples were extracted using valves or by piercing septa, and then introduced into an isotope ratio mass spectrometer for compound-specific δ(13)C measurements. For free gas, stainless steel canisters and crimp-top glass serum bottles with butyl septa were most effective at preventing isotopic fractionation (pierced and unpierced), whereas silicone and PTFE-butyl septa allowed significant isotopic fractionation. FlexFoil and Tedlar bags were found to be effective only for storage of up to 1 month. For dissolved gas, crimp-top glass serum bottles with butyl septa were again effective, whereas silicone and PTFE-butyl were not. FlexFoil bags were reliable for up to 2 months. Our results suggest a range of preferred containers as well as several that did not perform very well for isotopic analysis. Overall, the results help establish better QA/QC procedures to avoid isotopic fractionation when storing environmental gas samples. Recommended containers for air transportation include steel canisters and glass serum bottles with butyl septa (pierced and unpierced). Copyright © 2015 John Wiley & Sons, Ltd.

Large-grain polycrystalline silicon film by sequential lateral solidification on a plastic substrate

International Nuclear Information System (INIS)

Kim, Yong-Hae; Chung, Choong-Heui; Yun, Sun Jin; Moon, Jaehyun; Park, Dong-Jin; Kim, Dae-Won; Lim, Jung Wook; Song, Yoon-Ho; Lee, Jin Ho

2005-01-01

A large-grain polycrystalline silicon film was obtained on a plastic substrate by sequential lateral solidification. With various combinations of sputtering powers and Ar working gas pressures, the conditions for producing dense amorphous silicon (a-Si) and SiO 2 films were optimized. The successful crystallization of the a-Si film is attributed to the production of a dense a-Si film that has low argon content and can endure high-intensity laser irradiation

Silicon photonics III systems and applications

CERN Document Server

Lockwood, David

2016-01-01

This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

Silicon nanoparticles produced by spark discharge

International Nuclear Information System (INIS)

Vons, Vincent A.; Smet, Louis C. P. M. de; Munao, David; Evirgen, Alper; Kelder, Erik M.; Schmidt-Ott, Andreas

2011-01-01

On the example of silicon, the production of nanoparticles using spark discharge is shown to be feasible for semiconductors. The discharge circuit is modelled as a damped oscillator circuit. This analysis reveals that the electrode resistance should be kept low enough to limit energy loss by Joule heating and to enable effective nanoparticle production. The use of doped electrodes results in a thousand-fold increase in the mass production rate as compared to intrinsic silicon. Pure and oxidised uniformly sized silicon nanoparticles with a primary particle diameter of 3–5 nm are produced. It is shown that the colour of the particles can be used as a good indicator of the oxidation state. If oxygen and water are banned from the spark generation system by (a) gas purification, (b) outgassing and (c) by initially using the particles produced as getters, unoxidised Si particles are obtained. They exhibit pyrophoric behaviour. This continuous nanoparticle preparation method can be combined with other processing techniques, including surface functionalization or the immediate impaction of freshly prepared nanoparticles onto a substrate for applications in the field of batteries, hydrogen storage or sensors.

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming

2014-10-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming; Zhong, Zhaowei; Diallo, Elhadj; Wang, Zhihong; Yue, Weisheng

2014-01-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

Estimating Externalities of Natural Gas Fuel Cycles, Report 4

Energy Technology Data Exchange (ETDEWEB)

Barnthouse, L.W.; Cada, G.F.; Cheng, M.-D.; Easterly, C.E.; Kroodsma, R.L.; Lee, R.; Shriner, D.S.; Tolbert, V.R.; Turner, R.S.

1998-01-01

This report describes methods for estimating the external costs (and possibly benefits) to human health and the environment that result from natural gas fuel cycles. Although the concept of externalities is far from simple or precise, it generally refers to effects on individuals' well being, that result from a production or market activity in which the individuals do not participate, or are not fully compensated. In the past two years, the methodological approach that this report describes has quickly become a worldwide standard for estimating externalities of fuel cycles. The approach is generally applicable to any fuel cycle in which a resource, such as coal, hydro, or biomass, is used to generate electric power. This particular report focuses on the production activities, pollution, and impacts when natural gas is used to generate electric power. In the 1990s, natural gas technologies have become, in many countries, the least expensive to build and operate. The scope of this report is on how to estimate the value of externalities--where value is defined as individuals' willingness to pay for beneficial effects, or to avoid undesirable ones. This report is about the methodologies to estimate these externalities, not about how to internalize them through regulations or other public policies. Notwithstanding this limit in scope, consideration of externalities can not be done without considering regulatory, insurance, and other considerations because these institutional factors affect whether costs (and benefits) are in fact external, or whether they are already somehow internalized within the electric power market. Although this report considers such factors to some extent, much analysis yet remains to assess the extent to which estimated costs are indeed external. This report is one of a series of reports on estimating the externalities of fuel cycles. The other reports are on the coal, oil, biomass, hydro, and nuclear fuel cycles, and on general

Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

International Nuclear Information System (INIS)

Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

1996-01-01

Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

Modelling gas migration in compacted bentonite: GAMBIT Club Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Swift, B.T.; Hoch, A.R.; Rodwell, W.R. [AEA Technology (United Kingdom)

2001-01-01

This report describes the second phase of a programme of work to develop a computational model of gas migration through highly compacted bentonite. Experimental data that have appeared since the earlier report are reviewed for the additional information they might provide on the mechanism of gas migration in bentonite. Experiments carried out by Horseman and Harrigton (British Geological Survey) continued to provide the main data sets used in model evaluation. The earlier work (POSIVA Report 98-08) had resulted in a preliminary model of gas migration whose main features are gas invasion by microcrack propagation, and dilation of the pathways formed with increasing gas pressure. New work was carried out to further explore the capabilities of this model. In addition, a feature was added to the model to simulate gas pathway creation by water displacement rather than crack propagation. The development of a new alternative gas migration model is described. This is based on a volume-averaged representation of gas migration rather than on a description of flow in discrete pathways. Evaluation of this alternative model showed that it can produce similar agreement with experimental results to the other models examined. The implications of flow geometry, confining conditions and flow boundary conditions on gas migration behaviour in bentonite are reviewed. Proposals are made for the development of the new model into a tool for simulating gas migration through a bentonite buffer around a waste canister, and for possible enhancements to the model that might remove some of its currently perceived deficiencies. (orig.)

Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

International Nuclear Information System (INIS)

Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

2006-01-01

Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

Directory of Open Access Journals (Sweden)

Iatsunskyi I. R.

2013-12-01

Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

Real-time exhaust gas modular flowmeter and emissions reporting system for mobile apparatus

Science.gov (United States)

Breton, Leo Alphonse Gerard (Inventor)

2002-01-01

A real-time emissions reporting system includes an instrument module adapted to be detachably connected to the exhaust pipe of a combustion engine to provide for flow of exhaust gas therethrough. The instrument module includes a differential pressure probe which allows for determination of flow rate of the exhaust gas and a gas sampling tube for continuously feeding a sample of the exhaust gas to a gas analyzer or a mounting location for a non-sampling gas analyzer. In addition to the module, the emissions reporting system also includes an elastomeric boot for detachably connecting the module to the exhaust pipe of the combustion engine, a gas analyzer for receiving and analyzing gases sampled within the module and a computer for calculating pollutant mass flow rates based on concentrations detected by the gas analyzer and the detected flowrate of the exhaust gas. The system may also include a particulate matter detector with a second gas sampling tube feeding same mounted within the instrument module.

Probing the phase composition of silicon films in situ by etch product detection

International Nuclear Information System (INIS)

Dingemans, G.; Donker, M. N. van den; Gordijn, A.; Kessels, W. M. M.; Sanden, M. C. M. van de

2007-01-01

Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH 4 ) gas density during a short H 2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH 4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis

The French wholesale electricity and natural gas markets. 2009-2010 Report

International Nuclear Information System (INIS)

2010-10-01

This report on the operation of French wholesale electricity and natural gas markets deals with CRE wholesale market surveillance activities. It capitalizes on the experience gained in this area since the Law of the 7 December 2006 gave the CRE market surveillance powers. It is also based on feedback from discussions and interaction with the different stakeholders through public consultations. Market surveillance applies to: - electricity and gas, - bilateral transactions, trading on exchanges and cross-border transactions, - all maturities, from short-term markets to long-term contracts, - all French wholesale market counter-parties, whatever nationality they may have, - contracts for physical delivery, as well as to financial products. The Law also allows extensive surveillance of market participants' behaviour, in that the CRE can oversee not only transactions between operators but also their bids and the correspondence between the prices charged and the position of each operator. In order to address these different subjects, the electricity and gas sections of this report are divided into four main chapters dealing with the development of trading, wholesale market price trends, the fundamentals (generation, infrastructures) and, finally, the analysis of electricity transactions and the supply of alternative gas operators. Contents: A - Introduction, Summary of the report; B - Section 1 - The wholesale electricity markets: The development of the main segments of the wholesale market, Electricity prices, Analysis of generation and its transparency, Analysis of transactions; C - Section 2 - The wholesale gas markets: The development of gas trading, Gas prices, The gas infrastructures, The supply of players/new entrants; D - Section 3 - Appendices: Glossary, Index to graphs, Index to tables, Index to boxes

Interim development report: engineering-scale HTGR fuel particle crusher

International Nuclear Information System (INIS)

Baer, J.W.; Strand, J.B.

1978-09-01

During the reprocessing of HTGR fuel, a double-roll crusher is used to fracture the silicon carbide coatings on the fuel particles. This report describes the development of the roll crusher used for crushing Fort-St.Vrain type fissile and fertile fuel particles, and large high-temperature gas-cooled reactor (LHTGR) fissile fuel particles. Recommendations are made for design improvements and further testing

Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

International Nuclear Information System (INIS)

Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

2012-01-01

Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Staff report on Ontario gas distributor service quality regulation

Energy Technology Data Exchange (ETDEWEB)

NONE

2005-07-29

This report provides the basis for consultation regarding a framework for building principles and minimum standards regarding service quality measures for gas distributors. It begins with a general overview of current concerns expressed by Ontario natural gas consumers regarding service quality. Customer complaints logged with the Ontario Energy Board between 2003 and 2004 include common issues such as slow telephone response time, failure to obtain regular meter reads, inaccurate billing, long payment processing times, long reconnection times, long new connection times, and slow response to emergencies. This report also presents the historical experience in Ontario's energy sector regarding performance monitoring of services within an incentive based rate making framework for electricity and gas distributors. The Ontario Energy Board's Natural Gas Forum report reveals that a service quality framework would ensure that cost saving initiatives are not implemented at the expense of customer service or safe operation of the distribution system. Although the Board intends to implement a service quality framework, it will not include direct financial incentives. Rather, it will monitor service quality performance and utilities will be subject to a compliance process. A brief summary was also included of service quality regulations in the electricity sector and in other jurisdictions such as Australia, the United Kingdom, Pennsylvania, and Alberta. A list of issues that remain to be addressed before implementing a framework in Ontario was then presented. 2 appendices.

Employing Beam-Gas Interaction Vertices for Transverse Profile Measurements

CERN Document Server

Rihl, Mariana; Baglin, Vincent; Barschel, Colin; Bay, Aurelio; Blanc, Frederic; Bravin, Enrico; Bregliozzi, Giuseppe; Chritin, Nicolas; Dehning, Bernd; Ferro-Luzzi, Massimiliano; Gaspar, Clara; Gianì, Sebastiana; Giovannozzi, Massimo; Greim, Roman; Haefeli, Guido; Hopchev, Plamen; Jacobsson, Richard; Jensen, Lars; Jones, Owain Rhodri; Jurado, Nicolas; Kain, Verena; Karpinski, Waclaw; Kirn, Thomas; Kuhn, Maria; Luthi, Berengere; Magagnin, Paolo; Matev, Rosen; Nakada, Tatsuya; Neufeld, Niko; Panman, Jaap; Rakotomiaramanana, Barinjaka; Salustino Guimaraes, Valdir; Salvant, Benoit; Schael, Stefan; Schneider, Olivier; Schwering, Georg; Tobin, Mark; Veness, Raymond; Veyrat, Quentin; Vlachos, Sotiris; Wlochal, Michael; Xu, Zhirui; von Dratzig, Arndt

2016-01-01

Interactions of high-energy beam particles with residual gas offer a unique opportunity to measure the beam profile in a non-intrusive fashion. Such a method was successfully pioneered* at the LHCb experiment using a silicon microstrip vertex detector. During the recent Large Hadron Collider shutdown at CERN, a demonstrator Beam-Gas Vertexing system based on eight scintillating-fibre modules was designed**, constructed and installed on Ring 2 to be operated as a pure beam diagnostics device. The detector signals are read out and collected with LHCb-type front-end electronics and a DAQ system consisting of a CPU farm. Tracks and vertices will be reconstructed to obtain a beam profile in real time. Here, first commissioning results are reported. The advantages and potential for future applications of this technique are discussed.

Radiation cured silicone rubber articles

International Nuclear Information System (INIS)

DuPont, J.G.; Goodwin, P.A.

1984-01-01

A process for making radiation cured silicone rubber articles is disclosed wherein a hydroxyl-terminated polysilaxane having a molecular weight from about 50,000 to about 2,000,000, optionally modified by mixing with up to 85% of an end-stopped silicone rubber, is mixed with from about 10 to about 70 parts per hundred of rubber of a finely divided silica filler with a particle size in the reinforcing range and other inert fillers as determined by desired final properties; the composition so prepared is formed into the desired shape at room temperature; the article so formed is precured to improve the mechanical properties of the material with which it is made by exposure to ammonia gas, ammonium hydroxide, or to the vapors or solutions of a volatile amine at room temperature; and the precured article is irradiated with high energy electrons or gamma radiation to effect a permanent cure of the material from which the article is formed

PBX 9502 Gas Generation Progress Report FY17

Energy Technology Data Exchange (ETDEWEB)

Holmes, Matthew David [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Erickson, Michael Andrew Englert [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2017-10-03

The self-ignition (“cookoff”) behavior of PBX 9502 depends on the dynamic evolution of gas permeability and physical damage in the material. The time-resolved measurement of product gas generation yields insight regarding the crucial properties that dominate cookoff behavior. We report on small-scale laboratory testing performed in FY17, in which small unconfined samples of PBX 9502 were heated in a small custom-built sealed pressure vessel to self-ignition. We recorded time-lapse video of the evolving physical changes in the sample, quasi-static long-duration pressure rise, then high-speed video and dynamic pressure rise of the cookoff event. We report the full pressure attained during the cookoff of a 1.02g sample in a free volume of 62.5 cm³.

Processing development for ceramic structural components: the influence of a presintering of silicon on the final properties of reaction bonded silicon nitride. Final technical report

Energy Technology Data Exchange (ETDEWEB)

1982-03-01

The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, x-ray diffraction analysis, 4 pt. bend test, and mecury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Medium-Term Gas Market Report 2013: Market Trends and Projections to 2018

Energy Technology Data Exchange (ETDEWEB)

NONE

2013-06-01

Global growth in natural gas use slowed measurably in 2012, although it still exceeded that of oil and total energy use. Among the headwinds facing gas are continuing weak demand in Europe, resilience of coal in North America as well as persistent bottlenecks and disruptions in the LNG value chain that in 2012 caused an exceptional global decline of LNG supply. At the same time, Asian demand for gas remains red-hot, and gas is beginning to gain traction as a transport fuel. The IEA new Medium-Term Gas Market Report provides a detailed analysis of demand, upstream investment and trade developments through 2018 that will shape the gas industry and the role of gas in the global energy system. Its special sections investigate the economic viability of gas-fired power generation in Europe, the prospects for an LNG trading hub in Asia as well as the potentially transformational role of natural gas in transport. Amid a continuous regional divergence between North American abundance, European weakness and Asian thirst for LNG, the 2013 Medium Term Gas Market Report will investigate the key questions that the gas industry faces. These include the prospect of the United States becoming a major gas exporter, the challenges of securing enough gas to meet China’s growth, and the ability of Russian gas – spurred both by weak EU demand and resurgent domestic production – to find its manifest destiny in Asia.

18 CFR 260.1 - FERC Form No. 2, Annual report for Major natural gas companies.

Science.gov (United States)

2010-04-01

... report for Major natural gas companies. 260.1 Section 260.1 Conservation of Power and Water Resources FEDERAL ENERGY REGULATORY COMMISSION, DEPARTMENT OF ENERGY APPROVED FORMS, NATURAL GAS ACT STATEMENTS AND REPORTS (SCHEDULES) § 260.1 FERC Form No. 2, Annual report for Major natural gas companies. (a...

Silicon fabric for multi-functional applications

KAUST Repository

Sevilla, Galo T.; Rojas, Jhonathan Prieto; Ahmed, Sally; Hussain, Aftab M.; Inayat, Salman Bin; Hussain, Muhammad Mustafa

2013-01-01

This paper reports a generic process flow to fabricate mechanically flexible and optically semi-transparent thermoelectric generators (TEGs), micro lithium-ion batteries (μLIB) and metal-oxide-semiconductor capacitors (MOSCAPs) on mono-crystalline silicon fabric platforms from standard bulk silicon (100) wafers. All the fabricated devices show outstanding mechanical flexibility and performance, making an important step towards monolithic integration of Energy Chip (self-powered devices) including energy harvesters and electronic devices on flexible platforms. We also report a recyclability process for the remaining bulk substrate after release, allowing us to achieve a low cost flexible platform for high performance applications. © 2013 IEEE.

Silicon fabric for multi-functional applications

KAUST Repository

Sevilla, Galo T.

2013-06-01

This paper reports a generic process flow to fabricate mechanically flexible and optically semi-transparent thermoelectric generators (TEGs), micro lithium-ion batteries (μLIB) and metal-oxide-semiconductor capacitors (MOSCAPs) on mono-crystalline silicon fabric platforms from standard bulk silicon (100) wafers. All the fabricated devices show outstanding mechanical flexibility and performance, making an important step towards monolithic integration of Energy Chip (self-powered devices) including energy harvesters and electronic devices on flexible platforms. We also report a recyclability process for the remaining bulk substrate after release, allowing us to achieve a low cost flexible platform for high performance applications. © 2013 IEEE.

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

International Nuclear Information System (INIS)

Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

2015-01-01

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

Waveguiding properties of Er-implanted silicon-rich oxides

International Nuclear Information System (INIS)

Elliman, R.G.; Forcales, M.; Wilkinson, A.R.; Smith, N.J.

2007-01-01

The optical properties of erbium-doped silicon-rich silicon-oxide waveguides containing amorphous silicon nanoclusters and/or silicon nanocrystals are reported. Both amorphous nanoclusters and nanocrystals are shown to act as effective sensitizers for Er, with nanocrystals being more effective at low pump powers and nanoclusters being more effective at higher pump powers. All samples are shown to exhibit photo-induced absorption, as measured for a guided 1.5 μm probe beam while the waveguide was illuminated from above with a 477 nm pump beam. At a given pump power samples containing silicon nanocrystals exhibited greater attenuation than samples containing amorphous nanoclusters. The absorption is shown to be consistent with confined-carrier absorption due to photoexcited carriers in the nanocrystals and/or nanoclusters

Deposition of controllable preferred orientation silicon films on glass by inductively coupled plasma chemical vapor deposition

International Nuclear Information System (INIS)

Li Junshuai; Wang Jinxiao; Yin Min; Gao Pingqi; He Deyan; Chen Qiang; Li Yali; Shirai, Hajime

2008-01-01

An inductively coupled plasma (ICP) system with the adjustable distance between the inductance coil and substrates was designed to effectively utilize the spatial confinement of ICP discharge, and then control the gas-phase transport process. The effects of the gas phase processes on the crystallinity and preferred orientation of silicon films deposited on glass were systematically investigated. The investigation was conducted in the ICP-chemical vapor deposition process with the precursor gas of a SiH 4 /H 2 mixture at a substrate temperature of 350 deg. Highly crystallized silicon films with different preferred orientations, (111) or (220), could be selectively deposited by adjusting the SiH 4 dilution ratio [R=[SiH 4 ]/([SiH 4 ]+[H 2 ])] or total working pressure. When the total working pressure is 20 Pa, the crystallinity of the silicon films increases with the increase of the SiH 4 dilution ratio, while the preferred orientation was changed from (111) to (220). In the case of the fixed SiH 4 dilution (10%), the silicon film with I (220) /I (111) of about 3.5 and Raman crystalline fraction of about 89.6% has been deposited at 29.7 nm/min when the total working pressure was increased to 40 Pa. At the fixed SiH 4 partial pressure of 2 Pa, the film crystallinity decreases and the preferred orientation is always (111) with increasing the H 2 partial pressure from 18 to 58 Pa. Atomic force microscope reveals that the film deposited at a relatively high H 2 partial pressure has a very rough surface caused by the devastating etching of H atoms to the silicon network

Modelling gas migration in compacted bentonite: gambit club phase 3. Final report

International Nuclear Information System (INIS)

Hoch, A.R.; Cliffe, K.A.; Swift, B.T.; Rodwell, W.R.

2004-04-01

This report describes the third phase of a programme of work to develop a computational model of gas migration through highly compacted water-saturated bentonite. One difficulty with this endeavour is the definitive determination of the mechanism of the gas migration from the available experimental data. The report contains a brief review of the experimental data and their interpretation. The model development work reported involves the investigation of two ways of enhancing a model proposed in the previous phase of the programme. This model was based on the concept that gas migration pathways were created by consolidating the clay fabric by application of gas pressure to create porosity through which the gas could flow. The two developments of this model that are separately explored in this work are: (a) The incorporation of a proper treatment of the stress-strain behaviour of the clay in (b) response to gas migration. The previous model had only considered stress effects through simple volume changes to the clay fabric. The inclusion of a dual-porosity feature into the model in an attempt to address the role that the clay fabric might play in gas migration through the clay, in particular the role that pre-existing interstack voids might have in gas migration. The consideration of hysteresis effects was also included in this study. As in previous GAMBIT Club work, the models are tested against the results of laboratory experiments. (orig.)

A Microsystem Based on Porous Silicon-Glass Anodic Bonding for Gas and Liquid Optical Sensing

Directory of Open Access Journals (Sweden)

Ivo Rendina

2006-06-01

Full Text Available We have recently presented an integrated silicon-glass opto-chemical sensor forlab-on-chip applications, based on porous silicon and anodic bonding technologies. In thiswork, we have optically characterized the sensor response on exposure to vapors of severalorganic compounds by means of reflectivity measurements. The interaction between theporous silicon, which acts as transducer layer, and the organic vapors fluxed into the glasssealed microchamber, is preserved by the fabrication process, resulting in optical pathincrease, due to the capillary condensation of the vapors into the pores. Using theBruggemann theory, we have calculated the filled pores volume for each substance. Thesensor dynamic has been described by time-resolved measurements: due to the analysischamber miniaturization, the response time is only of 2 s. All these results have beencompared with data acquired on the same PSi structure before the anodic bonding process.

Prevention and control of proliferative vitreoretinopathy: primary retinal detachment surgery using silicone oil as a planned two-stage procedure in high-risk cases.

Science.gov (United States)

Alexander, P; Prasad, R; Ang, A; Poulson, A V; Scott, J D; Snead, M P

2008-06-01

For rhegmatogenous retinal detachment, reattachment with a single procedure is associated with better visual outcomes. In the past, silicone oil has been used mostly as a last resort following failed primary surgery. This study evaluates a novel approach to patients at high risk of primary failure, using silicone tamponade as the primary stage of a planned two-stage procedure. We report a series of 140 eyes that underwent primary surgery for rhegmatogenous retinal detachment. Patients at higher risk of surgical failure (eg giant retinal tear, inability to posture, poor view, uncertainty of location of primary break, primary proliferative vitreoretinopathy (PVR), multiple tears with rolled posterior edges, retinoschisis/detachment, staphyloma with macular hole) were managed by a planned staged procedure using primary silicone oil tamponade. This was followed by silicone removal at a later date. Fifty-four eyes underwent scleral buckling alone, with primary success in 52/54 (96%). Fifty-three eyes underwent vitrectomy and gas, achieving primary success in 50/53 (94%). Thirty-three eyes were classified high risk and managed with primary silicone. Silicone was safely removed in 22/25. In eight eyes, silicone was retained without attempt at removal. In total, primary retinal reattachment was achieved in 128 of 140 eyes (91.4%). Of these, 124 (97%) did not require long-term tamponade. Only four eyes (2.9%) developed PVR. A planned two-stage approach to highrisk cases of retinal detachment using primary silicone oil tamponade followed by silicone removal can achieve a high primary reattachment rate with less than 3% incidence of PVR.

Improvement of silicon direct bonding using surfaces activated by hydrogen plasma treatment

CERN Document Server

Choi, W B; Lee Jae Sik; Sung, M Y

2000-01-01

The plasma surface treatment, using hydrogen gas, of silicon wafers was studied as a pretreatment for silicon direct bonding. Chemical reactions of the hydrogen plasma with the surfaces were used for both surface activation and removal of surface contaminants. Exposure of the silicon wafers to the plasma formed an active oxide layer on the surface. This layer was hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposure time and power. The surface became smoother with shorter plasma exposure time and lower power. In addition, the plasma surface treatment was very efficient in removing the carbon contaminants on the silicon surface. The value of the initial surface energy, as estimated by using the crack propagation method, was 506 mJ/M sup 2 , which was up to about three times higher than the value for the conventional direct bonding method using wet chemical treatments.

Semi-annual report for the unconventional gas recovery program, period ending September 30, 1980

Energy Technology Data Exchange (ETDEWEB)

Manilla, R.D. (ed.)

1980-11-01

Progress is reported in research on methane recovery from coalbeds, eastern gas shales, western gas sands, and geopressured aquifers. In the methane from coalbeds project, data on information evaluation and management, resource and site assessment and characterization, model development, instrumentation, basic research, and production technology development are reported. In the methane from eastern gas shales project, data on resource characterization and inventory, extraction technology, and technology testing and verification are presented. In the western gas sands project, data on resource assessments, field tests and demonstrations and project management are reported. In the methane from geopressured aquifers project, data on resource assessment, supporting research, field tests and demonstrations, and technology transfer are reported.

Quasimetallic silicon micromachined photonic crystals

International Nuclear Information System (INIS)

Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

2001-01-01

We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

Generation and manipulation of entangled photons on silicon chips

Directory of Open Access Journals (Sweden)

Matsuda Nobuyuki

2016-08-01

Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

The Solenoidal Detector Collaboration silicon detector system

International Nuclear Information System (INIS)

Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

1992-01-01

Silicon tracking systems will be fundamental components of the tracking systems for both planned major SSC experiments. Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. This report discusses its design and operation

The solenoidal detector collaboration silicon detector system

International Nuclear Information System (INIS)

Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

1992-01-01

Silicon tracking systems (STS) will be fundamental components of the tracking systems for both planned major SSC experiments. The STS is physically a small part of the central tracking system and the calorimeter of the detector being proposed by the Solenoidal Detector Collaboration (SDC). Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. The STS will consist of silicon microstrip detectors and possibly silicon pixel detectors. The other two components are an outer barrel tracker, which will consist of straw tubes or scintillating fibers; and an outer intermediate angle tracker, which will consist of gas microstrips. The components are designed to work as an integrated system. Each componenet has specific strengths, but is individually incapable of providing the overall performance required by the physics goals of the SSC. The large particle fluxes, the short times between beam crossing, the high channel count, and the required very high position measurement accuracy pose challenging problems that must be solved. Furthermore, to avoid degrading the measurements, the solutions must be achieved using only a minimal amount of material. An additional constraint is that only low-Z materials are allowed. If that were not difficlut enough, the solutions must also be affordable

Mitigating greenhouse gas emissions: Voluntary reporting

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-10-01

The Voluntary Reporting Program, developed pursuant to Section 1605(b) of the Energy Policy Act of 1992, permits corporations, government agencies, households, and voluntary organizations to report on their emissions of greenhouse gases, and on actions taken that have reduced or avoided emissions or sequestered carbon, to the Energy Information Administration (EIA). This, the second annual report of the Voluntary Reporting Program, describes information provided by the participating organizations on their aggregate emissions and emissions reductions, as well as their emissions reduction or avoidance projects, through 1995. This information has been compiled into a database that includes reports from 142 organizations and descriptions of 967 projects that either reduced greenhouse gas emissions or sequestered carbon. Fifty-one reporters also provided estimates of emissions, and emissions reductions achieved, for their entire organizations. The projects described actions taken to reduce emissions of carbon dioxide from energy production and use; to reduce methane and nitrous oxide emissions from energy use, waste management, and agricultural processes; to reduce emissions of halocarbons, such as CFCs and their replacements; and to increase carbon sequestration.

Neuromorphic photonic networks using silicon photonic weight banks.

Science.gov (United States)

Tait, Alexander N; de Lima, Thomas Ferreira; Zhou, Ellen; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

2017-08-07

Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of a recurrent silicon photonic neural network, in which connections are configured by microring weight banks. A mathematical isomorphism between the silicon photonic circuit and a continuous neural network model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using "neural compiler" to solve a differential system emulation task. A 294-fold acceleration against a conventional benchmark is predicted. We also propose and derive power consumption analysis for modulator-class neurons that, as opposed to laser-class neurons, are compatible with silicon photonic platforms. At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast information processing for radio, control, and scientific computing.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

76 FR 4516 - Revisions to Forms, Statements, and Reporting Requirements for Natural Gas Pipelines

Science.gov (United States)

2011-01-26

...; Order No. 710-B] Revisions to Forms, Statements, and Reporting Requirements for Natural Gas Pipelines... for natural gas companies, contained in FERC Form Nos. 2, 2-A, and 3-Q, to include functionalized fuel..., and reports for natural gas companies, contained in FERC Form Nos. 2, 2-A, and 3-Q, to include...

18 CFR 260.9 - Reports by natural gas pipeline companies on service interruptions and damage to facilities.

Science.gov (United States)

2010-04-01

... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Reports by natural gas..., NATURAL GAS ACT STATEMENTS AND REPORTS (SCHEDULES) § 260.9 Reports by natural gas pipeline companies on service interruptions and damage to facilities. (a)(1) Every natural gas company must report to the...

Droplets on posterior surface of intraocular lens in silicone oil filled eye.

Directory of Open Access Journals (Sweden)

Sharma Y

2003-01-01

Full Text Available Silicone oil adherence to silicone IOLs after silicone oil removal is a known complication in pseudophakic patients. Droplet removal is difficult and may require IOL exchange. We describe two cases in which silicone oil droplets were observed early in the postoperative period in PMMA pseudophakic eyes and disappeared during silicone oil-fluid exchange--a phenomenon that has not been reported earlier in human PMMA pseudophakic eyes.

Pulse Shape Analysis and Discrimination for Silicon-Photomultipliers in Helium-4 Gas Scintillation Neutron Detector

Science.gov (United States)

Barker, Cathleen; Zhu, Ting; Rolison, Lucas; Kiff, Scott; Jordan, Kelly; Enqvist, Andreas

2018-01-01

Using natural helium (helium-4), the Arktis 180-bar pressurized gas scintillator is capable of detecting and distinguishing fast neutrons and gammas. The detector has a unique design of three optically separated segments in which 12 silicon-photomultiplier (SiPM) pairs are positioned equilaterally across the detector to allow for them to be fully immersed in the helium-4 gas volume; consequently, no additional optical interfaces are necessary. The SiPM signals were amplified, shaped, and readout by an analog board; a 250 MHz, 14-bit digitizer was used to examine the output pulses from each SiPMpair channel. The SiPM over-voltage had to be adjusted in order to reduce pulse clipping and negative overshoot, which was observed for events with high scintillation production. Pulse shaped discrimination (PSD) was conducted by evaluating three different parameters: time over threshold (TOT), pulse amplitude, and pulse integral. In order to differentiate high and low energy events, a 30ns gate window was implemented to group pulses from two SiPM channels or more for the calculation of TOT. It was demonstrated that pulses from a single SiPM channel within the 30ns window corresponded to low-energy gamma events while groups of pulses from two-channels or more were most likely neutron events. Due to gamma pulses having lower pulse amplitude, the percentage of measured gamma also depends on the threshold value in TOT calculations. Similarly, the threshold values were varied for the optimal PSD methods of using pulse amplitude and pulse area parameters. Helium-4 detectors equipped with SiPMs are excellent for in-the-field radiation measurement of nuclear spent fuel casks. With optimized PSD methods, the goal of developing a fuel cask content monitoring and inspection system based on these helium-4 detectors will be achieved.

Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

Science.gov (United States)

Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

2011-10-01

The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

Strengthening of oxidation resistant materials for gas turbine applications. [treatment of silicon ceramics for increased flexural strength and impact resistance

Science.gov (United States)

Kirchner, H. P.

1974-01-01

Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.

Process model for carbothermic production of silicon metal

Energy Technology Data Exchange (ETDEWEB)

Andresen, B.

1995-09-12

This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid flow fields etc, are presented graphically. In its present state the model is a prototype. The process is very complex, and the calculations are time consuming. The governing equations are coded into a Fortran 77 computer code applying the commercial 3D code FLUENT as a basis. 64 refs., 110 figs., 11 tabs.

RE: Request for Correction, Technical Support Document, Greenhouse Gas Emissions Reporting from the Petroleum and Natural Gas Industry

Science.gov (United States)

The Industrial Energy Consumers of America (IECA) joins the U.S. Chamber of Commerce in its request for correction of information developed by the Environmental Protection Agency (EPA) in a background technical support document titled Greenhouse Gas Emissions Reporting from the Petroleum and Natural Gas Industry

Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

International Nuclear Information System (INIS)

Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

2008-01-01

Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

Coated silicon comprising material for protection against environmental corrosion

Science.gov (United States)

Hazel, Brian Thomas (Inventor)

2009-01-01

In accordance with an embodiment of the invention, an article is disclosed. The article comprises a gas turbine engine component substrate comprising a silicon material; and an environmental barrier coating overlying the substrate, wherein the environmental barrier coating comprises cerium oxide, and the cerium oxide reduces formation of silicate glass on the substrate upon exposure to corrodant sulfates.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

Science.gov (United States)

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-08-04

The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

Organization of silicon nanocrystals by localized electrochemical etching

International Nuclear Information System (INIS)

Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

2009-01-01

An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

Porous silicon-based passivation and gettering in polycrystalline silicon solar cells

International Nuclear Information System (INIS)

Dimassi, W.; Bouaiecha, M.; Saadoun, M.; Bessaies, B.; Ezzaouia, H.; Bennaceur, R.

2002-01-01

In this work, we report on the effect of introducing a superficial porous silicon (PS) layer on the electrical characteristics of polycrystalline silicon solar cells. The PS layer was formed using a vapour etching (VE)-based method. In addition to its known anti-reflecting action, the forming hydrogen-rich PS layer acts as a passivating agent for the surface of the cell. As a result we found an improvement of the I-V characteristics in dark conditions and AM1 illumination. We show that when the formation of a superficial PS layer is followed by a heat treatment, gettering of impurities from the polycrystalline silicon material is possible. After the removal of the PS layer and the formation of the photovoltaic (PV) structure, we observed an increase of the light-beam-induced-current (LBIC) for treatment temperatures not exceeding 900 deg. C. An improvement of the bulk minority carrier diffusion length and the grain boundary (GB) recombination velocity were observed as the temperature rises, although a global decrease of the LBIC current was observed for temperatures greater than 900 deg. C

Feed gas contaminant removal in ion transport membrane systems

Science.gov (United States)

Carolan, Michael Francis [Allentown, PA; Miller, Christopher Francis [Macungie, PA

2008-09-16

Method for gas purification comprising (a) obtaining a feed gas stream containing one or more contaminants selected from the group consisting of volatile metal oxy-hydroxides, volatile metal oxides, and volatile silicon hydroxide; (b) contacting the feed gas stream with a reactive solid material in a guard bed and reacting at least a portion of the contaminants with the reactive solid material to form a solid reaction product in the guard bed; and (c) withdrawing from the guard bed a purified gas stream.

Penis swelling due to foreign body reaction after injection of silicone.

Science.gov (United States)

Plaza, Tobias; Lautenschlager, Stephan

2010-09-01

A 19-year-old man presented with phimosis and painful swelling of the penis four weeks after augmentation with silicone in Thailand. Histology revealed a foreign body reaction to silicone. Infectious causes were ruled out. Granulomatous foreign body reactions to silicone are common, but there are few case reports on reactions following silicone injection for penis enlargement. Foreign body reactions should be included in the differential diagnosis of penis swelling.

Strain-induced generation of silicon nanopillars

International Nuclear Information System (INIS)

Bollani, Monica; Osmond, Johann; Nicotra, Giuseppe; Spinella, Corrado; Narducci, Dario

2013-01-01

Silicon metal-assisted chemical etching (MACE) is a nanostructuring technique exploiting the enhancement of the silicon etch rate at some metal–silicon interfaces. Compared to more traditional approaches, MACE is a high-throughput technique, and it is one of the few that enables the growth of vertical 1D structures of virtually unlimited length. As such, it has already found relevant technological applications in fields ranging from energy conversion to biosensing. Yet, its implementation has always required metal patterning to obtain nanopillars. Here, we report how MACE may lead to the formation of porous silicon nanopillars even in the absence of gold patterning. We show how the use of inhomogeneous yet continuous gold layers leads to the generation of a stress field causing spontaneous local delamination of the metal—and to the formation of silicon nanopillars where the metal disruption occurs. We observed the spontaneous formation of nanopillars with diameters ranging from 40 to 65 nm and heights up to 1 μm. Strain-controlled generation of nanopillars is consistent with a mechanism of silicon oxidation by hole injection through the metal layer. Spontaneous nanopillar formation could enable applications of this method to contexts where ordered distributions of nanopillars are not required, while patterning by high-resolution techniques is either impractical or unaffordable. (paper)

Activities report - IBP - Instituto Brasileiro do Petroleo e Gas - 2006; Relatorio de atividades - IBP - Instituto Brasileiro do Petroleo e Gas - 2006

Energy Technology Data Exchange (ETDEWEB)

NONE

2006-07-01

This report presents the activities of IBP- Instituto Brasileiro de Petroleo e Gas (Brazilian Institute of Oil and Gas) in the year of 2005 as follows: economic and energy policy; supply, natural gas, support and services, certification, standardization, courses, events and normalization managing.

Activities report - IBP - Instituto Brasileiro do Petroleo e Gas - 2005; Relatorio de atividades - IBP - Instituto Brasileiro do Petroleo e Gas - 2005

Energy Technology Data Exchange (ETDEWEB)

NONE

2005-07-01

This report presents the activities of IBP - Instituto Brasileiro de Petroleo e Gas (Brazilian Institute of Oil and Gas) in the year of 2005 as follows: economic and energy policy, supply, natural gas, support and services, certification, courses, events and normalization managing.

Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

NARCIS (Netherlands)

Vereshchagina, E.

2011-01-01

In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

High damage tolerance of electrochemically lithiated silicon

Science.gov (United States)

Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; Xia, Shuman

2015-01-01

Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. Here we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratio is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries. PMID:26400671

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

International Nuclear Information System (INIS)

Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

2010-01-01

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

2010-02-15

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

75 FR 35700 - Revisions to Forms, Statements, and Reporting Requirements for Natural Gas Pipelines

Science.gov (United States)

2010-06-23

...] Revisions to Forms, Statements, and Reporting Requirements for Natural Gas Pipelines June 17, 2010. AGENCY... reporting forms required to be filed by natural gas companies (FERC Form Nos. 2, 2-A, [[Page 35701

Etching radical controlled gas chopped deep reactive ion etching

Science.gov (United States)

Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

2013-10-01

A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

Natural gas imports and exports. Second quarter report 1995

Energy Technology Data Exchange (ETDEWEB)

NONE

1995-12-31

This quarter`s feature report focuses on natural gas exports to Mexico. OFP invites ideas from the public on future topics dealing with North American natural gas import/export trade. Such suggestions should be left on OFP`s electronic bulletin board. Natural Gas exports to Mexico continued to grow and reached an historic high for the month of June (7.8 Bcf). Two new long-term contracts were activated; Pennsylvania Gas & Water Company began importing 14.7 MMcf per day from TransCanada PipeLines Ltd., and Renaissance Energy (U.S.) Inc. began importing 2.8 MMcf per day from Renaissance Energy Ltd. for resale to Delmarva Power & Light Company. Algerian LNG imports remained stagnant with only one tanker being imported by Pan National Gas Sales, Inc. (Pan National). During the first six months of 1995, data indicates gas imports increased by about 10 percent over the 1994 level (1,418 vs. 1,285 Bcf), with Canadian imports increasing by 14 percent and Algerian imports decreasing by 81 percent. During the same time period, exports increased by 18 percent (83 vs. 70.1 Bcf).

Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report

International Nuclear Information System (INIS)

Bloomfield, P.

1992-01-01

The authors have delivered several 64-element linear arrays of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. They have delivered detailed drawings of the linear arrays to LANL. They have processed a series of two inch wafers per submitted design. Each two inch wafer contains two 64 element arrays. After spin-coating copolymer onto the arrays, vacuum depositing the top electrodes, and polarizing the copolymer films so as to make them pyroelectrically active, each wafer was split in half. The authors developed a thicker oxide coating separating the extended gate electrode (beneath the polymer detector) from the silicon. This should reduce its parasitic capacitance and hence improve the S/N. They provided LANL three processed 64 element sensor arrays. Each array was affixed to a connector panel and selected solder pads of the common ground, the common source voltage supply connections, the 64 individual drain connections, and the 64 drain connections (for direct pyroelectric sensing response rather than the MOSFET action) were wire bonded to the connector panel solder pads. This entails (64 + 64 + 1 + 1) = 130 possible bond connections per 64 element array. This report now details the processing steps and the progress of the individual wafers as they were carried through from beginning to end

Production of high specific activity silicon-32

International Nuclear Information System (INIS)

Phillips, D.R.; Brzezinski, M.A.

1998-01-01

This is the final report of a three-year, Laboratory Directed Research and Development Project (LDRD) at Los Alamos National Laboratory (LANL). There were two primary objectives for the work performed under this project. The first was to take advantage of capabilities and facilities at Los Alamos to produce the radionuclide 32 Si in unusually high specific activity. The second was to combine the radioanalytical expertise at Los Alamos with the expertise at the University of California to develop methods for the application of 32 Si in biological oceanographic research related to global climate modeling. The first objective was met by developing targetry for proton spallation production of 32 Si in KCl targets and chemistry for its recovery in very high specific activity. The second objective was met by developing a validated field-useable, radioanalytical technique, based upon gas-flow proportional counting, to measure the dynamics of silicon uptake by naturally occurring diatoms

Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of silicon mass-production manufacturing technology for solar cells; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

In order to manufacture silicon for solar cells, development is intended on a technology to manufacture silicon (SOG-Si) for solar cells by means of metallurgical methods using metallic silicon with purity generally available as an interim starting material. The silicon is required of p-type electric conductivity characteristics with specific resistance of 0.5 to 1.5 ohm per cm, to be sufficient even with 6-7N as compared to silicon for semiconductors (11-N), and to be low in cost. While the NEDO fluid bed process and the metallurgical NEDO direct reduction process have been developed based on the technology to manufacture silicon for semiconductors, the basic policy was established to develop a new manufacturing method using commercially available high-purity metallic silicon as an interim starting material, with an objective to achieve cost as low as capable of responding to small-quantity phase production for proliferation purpose. Removal of boron and phosphor has been the main issue in the development, whereas SOG-Si was manufactured in a laboratory scale by combining with the conventional component technologies in fiscal 1991 and 1992. The scale was expanded to 20 kg since fiscal 1993, and a five year plan starting fiscal 1996 was decided to develop the technology for industrial scale. Fiscal 1997 has promoted the development by using the 20-kg scale device, and introduced facilities to develop technology for mass-production scale. (NEDO)

Welfare effects of governmental interventions with a liberalized natural gas market. The Dutch natural gas exploitation policy. Report of an introduction and a reaction

International Nuclear Information System (INIS)

Verschoor, M.

2006-01-01

A report is given of a meeting of the Netherlands Association for Energy Legislation (NEVER), which was held in Amsterdam, Netherlands, April 2006. After the meeting a presentation was made about the report 'Government involvement in liberalised gas markets. A welfare-economic analysis of the Dutch gas-depletion policy' of the Netherlands Bureau for Economic Policy Analysis (CPB). This report analyses the welfare effects of two major components of the Dutch gas-depletion policy: the offtake guarantee for small-fields gas and the cap on production from the Groningen field. After the presentation a reaction was given to the report. Both presentations give an overview of the governmental policy and insight in the effects [nl

Public safety and sour gas quarterly progress report October - December 2002

Energy Technology Data Exchange (ETDEWEB)

Sikora, V.; Lillo, H.; Craig, M.; Neilson, G.

2003-01-01

This third quarterly progress report for the business year 2002-2003 on the Alberta Energy and Utilities Board (EUB) Public Safety and Sour Gas initiative covers projects based on the 87 recommendations made by the Provincial Advisory Committee on Public Safety and Sour Gas (Advisory Committee) in December 2000. As of December 2002, work has been completed on 16 recommendations and is proceeding on 50 recommendations. This report includes several tables indicating the status of recommendations as either complete or ongoing. The recommendation categories include: (1) sour gas development, planning and approval, (2) sour gas operations, (3) emergency preparedness, and (4) information, communication and consultation. The report also summarizes the health effects and sour gas research. Recommendations completed as of December 2002 include: plant proliferation; pre-license review of critical well license applications; license application training/certification information requirement; increase sour gas inspections; increase inspections of new and noncompliant operators; implement 100 per cent inspection rate for critical wells near people; response to sour gas complaints; enhance EUB capability to monitor for complaint response/compliance; complaint/incident response program for Aboriginal communities; interim policy on ERP review and reduced EPZs; infrastructure and resources for Aboriginal community ERP; field staff in industry-landowner discussions; EUB involvement in mediation of application issues; and, timely and meaningful public consultation for First Nations and Metis. Alberta Health and Wellness is currently evaluating the health effects of H{sub 2}S and SO{sub 2} and the work is near completion. Other ongoing work includes the development of a draft protocol to address the involvement of regional health authorities (RHAs), the early involvement of RHAs and other local government bodies, and a process for communication between the EUB field staff and

Ultrasonographic study of subcutaneous penile granuloma secondary to silicone injection

Directory of Open Access Journals (Sweden)

Lucio Dell'Atti

2016-10-01

Full Text Available Penile augmentation has been reported in the literature by injecting various materials. This study reports our experience in management of penile augmentation complications associated with selfpenile injection of silicone liquid. After a careful ultrasound study, the penile skin was excised through a circumferential sub-coronal incision and dissected with the silicon mass. Histology was well-compatible with silicone granulomas. The patient was discharged after 24 hours. Ultrasonography has permitted preoperatively to determine if the plane between the indurated inflammatory tissue and the Buck’s fascia was preserved for the complete surgical excision of affected tissue.

Novel fabrication of silicon carbide based ceramics for nuclear applications

Science.gov (United States)

Singh, Abhishek Kumar

Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

Ontario gas prices review task force report : fairness at the pump

International Nuclear Information System (INIS)

2000-01-01

Sudden gas price increases hit Ontario consumers in July 1999, and as a result, the Gas Busters Hotline operated by the provincial government received over 4,000 complaints concerning the price of gas. World crude oil prices increased to above 34 American dollars per barrel by March 2000, and there were discrepancies by as much as 10 cents a litre in the price of gas in Ontario, depending on the community where the purchase was made. The Gas Prices Review Task Force was established in November 1999 to assist in the identification of an adequate solution to the rising price of gas. Public participation was sought, as well as input from representatives of consumer groups and industry. The Task Force was also mandated to conduct policy options research to ensure fair prices at the pump, to examine the regulatory or legislative initiatives that would work best for the protection of the consumer, in accordance with the federal Competition Act. A report was submitted to the Minister of Consumer and Commercial Relations. A total of fourteen recommendations were made to the Minister. The recommendations touched topics as varied as tax collection legislation, price monitoring, segmented earnings reports, removal of the Goods and Services Tax (GST). refs., figs

Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

Science.gov (United States)

Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

2015-02-07

Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

Radiation damage studies for the D0 silicon detector

International Nuclear Information System (INIS)

Lehner, F.

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

18 CFR 260.2 - FERC Form No. 2-A, Annual report for Nonmajor natural gas companies.

Science.gov (United States)

2010-04-01

..., Annual report for Nonmajor natural gas companies. 260.2 Section 260.2 Conservation of Power and Water Resources FEDERAL ENERGY REGULATORY COMMISSION, DEPARTMENT OF ENERGY APPROVED FORMS, NATURAL GAS ACT STATEMENTS AND REPORTS (SCHEDULES) § 260.2 FERC Form No. 2-A, Annual report for Nonmajor natural gas...

An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires.

Science.gov (United States)

Yu, Linwei; Alet, Pierre-Jean; Picardi, Gennaro; Roca i Cabarrocas, Pere

2009-03-27

We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-SiratioH matrix into crystalline SiNWs. The SiNWs can be approximately mm long, with the smallest diameter down to approximately 22 nm. A high growth rate of >10(2) nm/s and rich evolution dynamics are revealed in a real-time in situ scanning electron microscopy observation. A qualitative growth model is proposed to account for the major features of this IPSLS SiNW growth mode.

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

Science.gov (United States)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Ion beam analysis of PECVD silicon oxide thin films

International Nuclear Information System (INIS)

Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

2006-01-01

A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

Low cost solar array project silicon materials task. Development of a process for high capacity arc heater production of silicon for solar arrays

Science.gov (United States)

Fey, M. G.

1981-01-01

The experimental verification system for the production of silicon via the arc heater-sodium reduction of SiCl4 was designed, fabricated, installed, and operated. Each of the attendant subsystems was checked out and operated to insure performance requirements. These subsystems included: the arc heaters/reactor, cooling water system, gas system, power system, Control & Instrumentation system, Na injection system, SiCl4 injection system, effluent disposal system and gas burnoff system. Prior to introducing the reactants (Na and SiCl4) to the arc heater/reactor, a series of gas only-power tests was conducted to establish the operating parameters of the three arc heaters of the system. Following the successful completion of the gas only-power tests and the readiness tests of the sodium and SiCl4 injection systems, a shakedown test of the complete experimental verification system was conducted.

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

Annealing behaviour of high-dose rare-gas implantations into silicon

International Nuclear Information System (INIS)

Williams, J.S.; Grant, W.A.

1976-01-01

The annealing behaviour of 13 -10 17 ions/cm 2 is investigated by RBS and channelling techniques. There appears to be a strong correlation between the degree and nature of the post-anneal (above 650 0 C) remnant Si disorder, the implanted gas concentration and subsequent out-diffusion of the gas species. During the out-diffusion process a fraction of the gas (always less than 10 15 cm -2 ) remains trapped at, or beyond, the ion range and some of the diffusing gas becomes trapped near the target surface; for implantation doses below 10 15 cm -2 , no out-diffusion is observed up to 850 0 C. This behaviour is discussed in terms of the defect structure of the recrystallized implant layer. (author)

Baseline Gas Turbine Development Program. Fourteenth quarterly progress report

Energy Technology Data Exchange (ETDEWEB)

Schmidt, F W; Wagner, C E

1976-04-30

Progress is reported for a Baseline Gas Turbine Development Program sponsored by the Heat Engine Systems Branch, Division of Transportation Energy Conservation (TEC) of the Energy Research and Development Administration (ERDA). Structurally, this program is made up of three parts: (1) documentation of the existing automotive gas turbine state-of-the-art; (2) conduction of an extensive component improvement program; and (3) utilization of the improvements in the design, and building of an Upgraded Engine capable of demonstrating program goals.

75 FR 18607 - Mandatory Reporting of Greenhouse Gases: Petroleum and Natural Gas Systems

Science.gov (United States)

2010-04-12

...: Petroleum and Natural Gas Systems; Proposed Rule #0;#0;Federal Register / Vol. 75 , No. 69 / Monday, April... Natural Gas Systems AGENCY: Environmental Protection Agency (EPA). ACTION: Proposed rule. SUMMARY: EPA is... natural gas systems. Specifically, the proposed supplemental rulemaking would require emissions reporting...

A low-power pressure-and temperature-programmed separation system for a micro gas chromatograph.

Energy Technology Data Exchange (ETDEWEB)

Sacks, Richard D. (University of Michigan, Ann Arbor, MI); Robinson, Alex Lockwood (Advanced Sensor Technologies, Albuquerque, NM); Lambertus, Gordon R. (University of Michigan, Ann Arbor, MI); Potkay, Joseph A. (University of Michigan, Ann Arbor, MI); Wise, Kensall D. (University of Michigan, Ann Arbor, MI)

2006-10-01

This thesis presents the theory, design, fabrication and testing of the microvalves and columns necessary in a pressure- and temperature-programmed micro gas chromatograph ({micro}GC). Two microcolumn designs are investigated: a bonded Si-glass column having a rectangular cross section and a vapor-deposited silicon oxynitride (Sion) column having a roughly circular cross section. Both microcolumns contain integrated heaters and sensors for rapid, controlled heating. The 3.2 cm x 3.2 cm, 3 m-long silicon-glass column, coated with a non-polar polydimethylsiloxane (PDMS) stationary phase, separates 30 volatile organic compounds (VOCs) in less than 6 min. This is the most efficient micromachined column reported to date, producing greater than 4000 plates/m. The 2.7 mm x 1.4 mm Sion column eliminates the glass sealing plate and silicon substrate using deposited dielectrics and is the lowest power and fastest GC column reported to date; it requires only 11 mW to raise the column temperature by 100 C and has a response time of 11s and natural temperature ramp rate of 580 C/min. A 1 m-long PDMS-coated Sion microcolumn separates 10 VOCs in 52s. A system-based design approach was used for both columns.

Activities report - IBP - Instituto Brasileiro do Petroleo e Gas - 2007; Relatorio de atividades - IBP - Instituto Brasileiro do Petroleo e Gas - 2007

Energy Technology Data Exchange (ETDEWEB)

NONE

2007-07-01

This report presents the activities of IBP- Instituto Brasileiro de Petroleo e Gas (Brazilian Institute of Oil and Gas) in the year of 2005 as follows: economic and energy policy; supply, natural gas, petroleum, biofuels, support and services, environment, licensing, certification, standardization, courses, information system, events and normalization managing.

Enhancement of deposition rate at cryogenic temperature in synchrotron radiation excited deposition of silicon film

International Nuclear Information System (INIS)

Nara, Yasuo; Sugita, Yoshihiro; Ito, Takashi; Kato, Hiroo; Tanaka, Ken-ichiro

1989-01-01

The authors have investigated the synchrotron radiation excited deposition of silicon films on the SiO 2 substrate by using SiH 4 /He mixture gas at BL-12C at Photon Factory. They used VUV light from the multilayer mirror with the center photon energy from 97 to 123eV, which effectively excites L-core electrons of silicon. Substrate temperature was widely varied from -178 degree C to 500 degree C. At -178 degree C, the deposition rate was as high as 400nm/200mAHr (normalized at the storage ring current at 200mA). As increasing the substrate temperature, the deposition rate was drastically decreased. The number of deposited silicon atoms is estimated to be 4 to 50% of incident photons, while the number of photo generated species in the gas phase within the mean free path from the surface is calculated as few as about 10 -3 of incident photons. These experimental results show that the deposition reaction is governed by the dissociation of surface adsorbates by the synchrotron radiation

Generation of silicon nanostructures by atmospheric microplasma jet: the role of hydrogen admixture

Czech Academy of Sciences Publication Activity Database

Barwe, B.; Stein, A.; Cibulka, Ondřej; Pelant, Ivan; Ghanbaja, J.; Belmonte, T.; Benedikt, J.

2015-01-01

Roč. 12, č. 2 (2015), s. 132-140 ISSN 1612-8850 Institutional support: RVO:68378271 Keywords : atmospheric pressure plasmas * HRTEM * microplasmas * photoluminescence * silicon nanocrystals Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.713, year: 2015

Impurity Precipitation, Dissolution, Gettering and Passivation in PV Silicon: Final Technical Report, 30 January 1998--29 August 2001

Energy Technology Data Exchange (ETDEWEB)

Weber, E. R.

2002-02-01

This report describes the major progress in understanding the physics of transition metals in silicon and their possible impact on the efficiency of solar cells that was achieved during the three-year span of this subcontract. We found that metal-silicide precipitates and dissolved 3d transition metals can be relatively easily gettered. Gettering and passivating treatments must take into account the individuality of each transition metal. Our studies demonstrated how significant is the difference between defect reactions of copper and iron. Copper does not significantly affect the minority-carrier diffusion length in p-type silicon, at least as long as its concentration is low, but readily precipitates in n-type silicon. Therefore, copper precipitates may form in the area of p-n junctions and cause shunts in solar cells. Fortunately, copper precipitates are present mostly in the chemical state of copper-silicide and can relatively easily be dissolved. In contrast, iron was found to form clusters of iron-oxides and iron-silicates in the wafers. These clusters are thermodynamically stable even in high temperatures and are extremely difficult to remove. The formation of iron-silicates was observed at temperatures over 900C.

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Non-fossil reduction materials in the silicon process - properties and behaviour

Energy Technology Data Exchange (ETDEWEB)

Myrhaug, Edin Henrik

2003-07-01

The purpose of this work has been to clarify the effect of using biocarbon as a reduction material in the silicon process. It was decided to compare the biocarbon with fossil carbon and find possible differences both on process performance and eventually on product quality. The elements in the raw materials added to the silicon process goes into three different products: silicon metal, silica dust and into open air. Based on analysis of raw materials and of produced silicon metal and microsilica extensive material balances have been established. One important result from these are the distribution factors that indicate how much of the trace elements that goes into each medium. Another result is that the boiling point of an element or a compound gives a good indication of were it ends. A high boiling point indicates that the element ends up in the silicon metal, while a low boiling point indicates that the element goes with off-gas into air. With an intermediate boiling point, the element goes into the silica dust. The SiO-reactivity of the reduction materials are commonly acknowledged to affect strongly the productivity and consumption figures of the silicon process. Based on data from thermogravimetric experiments with chemical reaction between carbonaceous spheres and SiO-gas, kinetic parameters have been estimated from the shrinking core model for some selected reduction materials of various sizes and spanning a wide range of SiO-reactivity figures. This model describes the degree of conversion versus time for a single sphere where the chemical reaction progresses in a topochemical manner from the outer surface of the solid towards the centre forming a porous product layer around an unreacted shrinking core. This behaviour is for the selected reduction materials to a large extent supported by an investigation of cross section pictures of fully and 50% converted spheres obtained with a microprobe. The estimated kinetic parameters obtained from the

Internal energy deposition with silicon nanoparticle-assisted laser desorption/ionization (SPALDI) mass spectrometry

Science.gov (United States)

Dagan, Shai; Hua, Yimin; Boday, Dylan J.; Somogyi, Arpad; Wysocki, Ronald J.; Wysocki, Vicki H.

2009-06-01

The use of silicon nanoparticles for laser desorption/ionization (LDI) is a new appealing matrix-less approach for the selective and sensitive mass spectrometry of small molecules in MALDI instruments. Chemically modified silicon nanoparticles (30 nm) were previously found to require very low laser fluence in order to induce efficient LDI, which raised the question of internal energy deposition processes in that system. Here we report a comparative study of internal energy deposition from silicon nanoparticles to previously explored benzylpyridinium (BP) model compounds during LDI experiments. The internal energy deposition in silicon nanoparticle-assisted laser desorption/ionization (SPALDI) with different fluorinated linear chain modifiers (decyl, hexyl and propyl) was compared to LDI from untreated silicon nanoparticles and from the organic matrix, [alpha]-cyano-4-hydroxycinnamic acid (CHCA). The energy deposition to internal vibrational modes was evaluated by molecular ion survival curves and indicated that the ions produced by SPALDI have an internal energy threshold of 2.8-3.7 eV. This is slightly lower than the internal energy induced using the organic CHCA matrix, with similar molecular survival curves as previously reported for LDI off silicon nanowires. However, the internal energy associated with desorption/ionization from the silicon nanoparticles is significantly lower than that reported for desorption/ionization on silicon (DIOS). The measured survival yields in SPALDI gradually decrease with increasing laser fluence, contrary to reported results for silicon nanowires. The effect of modification of the silicon particle surface with semifluorinated linear chain silanes, including fluorinated decyl (C10), fluorinated hexyl (C6) and fluorinated propyl (C3) was explored too. The internal energy deposited increased with a decrease in the length of the modifier alkyl chain. Unmodified silicon particles exhibited the highest analyte internal energy

Assessment and status report High-Temperature Gas-Cooled Reactor gas-turbine technology

International Nuclear Information System (INIS)

1981-01-01

Purpose of this report is to present a brief summary assessment of the High Temperature Gas-Cooled Reactor - Gas Turbine (HTGR-GT) technology. The focal point for the study was a potential 2000 MW(t)/800 MW(e) HTGR-GT commercial plant. Principal findings of the study were that: the HTGR-GT is feasible, but with significantly greater development risk than the HTGR-SC (Steam Cycle). At the level of performance corresponding to the reference design, no incremental economic incentive can be identified for the HTGR-GT to offset the increased development costs and risk relative to the HTGR-SC. The relative economics of the HTGR-GT and HTGR-SC are not significantly impacted by dry cooling considerations. While reduced cycel complexity may ultimately result in a reliability advantage for the HTGR-GT, the value of that potential advantage was not quantified

Western Gas Sands Project. Status report, 1 January 1979--31 January 1979

Energy Technology Data Exchange (ETDEWEB)

Atkinson, C H

1979-01-01

Aim is to increase gas production from the low-permeability gas sands of the western U.S. Progress is reported on: project management, resource assessment, R and D at various facilities, and field tests and demonstrations. (DLC)

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Calcinosis Cutis Long after Rhinoplasty with Silicone

Directory of Open Access Journals (Sweden)

Yuki Honda

2014-12-01

Full Text Available Rhinoplasty is a plastic surgery procedure to reconstruct the nose. Silicone alloplastic materials are most widely used as implants for rhinoplasty, but calcification on the surface occurs with long-term usage. Herein, we report a case of gruel-like calcification approximately 50 years after silicone implant rhinoplasty. In this case, calcification on the silicone surface might have transformed into gruel-like deposits, which presented as a subcutaneous mass at the dorsal area of the nose. The precise mechanism is unclear; a pH change in the tissue might have occurred during the process of inflammation, leading to the dissolution of calcified deposits.

Long term Gas Supply Security in an Enlarged Europe. Final Report ENGAGED Project

International Nuclear Information System (INIS)

Van Oostvoorn, F.; Likachev, V.; Morgan, T.

2004-12-01

The title project concerned a study on the long-term gas supply security in Europe with a focus on the developments, risks and policies in the candidate countries in Eastern Europe. For that reason the report not only includes a European and EU-30 wide scenario analysis but also chapters on specific topics. One study (a chapter in this report) concerns the gas market and regulation developments in a number of relevant candidate countries. Another chapter presents a Russian vision on gas demand, production and supplies from Russia and also includes a paragraph on the supplies from other neighbours and the transit issues in the Ukraine. Finally, the report contains a chapter discussing the required network infrastructure for bringing the gas from external gas suppliers to the EU-30 markets. Hereby it analysis and tests the network flexibility to cope with some unlikely and unexpected supply interruptions in main pipelines to EU markets. The background information of the studies underlying the chapters can be partly found in the annexes and in the individual task reports. During the project the results of the study were discussed at several seminars in candidate countries and particularly on the final seminar in Prague, in June 2003, with different and important stakeholders and market actors

Fluidized bed deposition and evaluation of silicon carbide coatings on microspheres

International Nuclear Information System (INIS)

Federer, J.I.

1977-01-01

The fuel element for the HTGR is an array of closely packed fuel microspheres in a carbonaceous matrix. A coating of dense silicon carbide (SiC), along with pyrocarbon layers, is deposited on the fueled microspheres to serve as a barrier against diffusion of fission products. The microspheres are coated with silicon carbide in a fluidized bed by reaction of methyltrichlorosilane (CH 3 SiCl 3 or MTS) and hydrogen at elevated temperatures. The principal variables of coating temperature and reactant gas composition (H 2 /MTS ratio) have been correlated with coating rate, morphology, stoichiometry, microstructure, and density. The optimum temperature for depositing highly dense coatings is in the range 1475 to 1675 0 C. Lower temperatures result in silicon-rich deposits, while higher temperatures may cause unacceptable porosity. The optimum H 2 /MTS ratio for highly dense coatings is 20 or more (approximately 5% MTS or less). The amount of grown-in porosity increases as the H 2 /MTS ratio decreases below 20. The requirement that the H 2 /MTS ratio be about 20 or more imposes a practical restraint on coating rate, since increasing the total flow rate would eventually expel microspheres from the coating tube. Evaluation of stoichiometry, morphology, and microstructure support the above mentioned optimum conditions of temperature and reactant gas composition. 18 figures, 3 tables

Large magnetoresistance effect in nitrogen-doped silicon

Directory of Open Access Journals (Sweden)

Tao Wang

2017-05-01

Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

Science.gov (United States)

Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

2018-03-01

The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

Effect of Silicon in U-10Mo Alloy

Energy Technology Data Exchange (ETDEWEB)

Kautz, Elizabeth J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Devaraj, Arun [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kovarik, Libor [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lavender, Curt A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Joshi, Vineet V. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2017-08-31

This document details a method for evaluating the effect of silicon impurity content on U-10Mo alloys. Silicon concentration in U-10Mo alloys has been shown to impact the following: volume fraction of precipitate phases, effective density of the final alloy, and 235-U enrichment in the gamma-UMo matrix. This report presents a model for calculating these quantities as a function of Silicon concentration, which along with fuel foil characterization data, will serve as a reference for quality control of the U-10Mo final alloy Si content. Additionally, detailed characterization using scanning electron microscope imaging, transmission electron microscope diffraction, and atom probe tomography showed that Silicon impurities present in U-10Mo alloys form a Si-rich precipitate phase.

Report from SG 1.1: improving the performance of existing gas storages

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-07-01

This report aims to identify underlying trends for improvements in the underground gas storage (UGS) industry. It highlights best practices and state-of-the-art technology used in operating gas storages. The core conclusions of this report are based on a survey, which was sent out to the member countries. A reply was received from 15 countries, represented by 22 companies/institutions, including more than 100 gas storage sites. This response represents some 30% of the total estimated world storage working volume. In the survey operators were asked to report on the following issues: - measures implemented to improve the performance, - current priorities for improvements, - most important drivers for improvement, - techniques used to analyze performance, - techniques used to optimize storage performance, - software packages used, - technology used for reservoir management, wells and surface facilities, - safety and environment. (author)

Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Directory of Open Access Journals (Sweden)

Jia Ge

2014-01-01

Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

Potassium ions in SiO2: electrets for silicon surface passivation

Science.gov (United States)

Bonilla, Ruy S.; Wilshaw, Peter R.

2018-01-01

This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5  ×  1012 e cm-2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide-silicon interface with SRV  industrial manufacture of silicon optoelectronic devices.

Marine transportation of liquefied natural gas. Final report

Energy Technology Data Exchange (ETDEWEB)

Curt, R.P.; Delaney, T.D.

1973-01-01

This report covers in some detail most of the major areas of consideration involved in the marine carriage of LNG. Some of the fields investigated and reviewed are the world's total energy picture and the particular requirements of natural gas in the United States in the near future. (GRA)

Electrochemical and hydrothermal deposition of ZnO on silicon: from continuous films to nanocrystals

International Nuclear Information System (INIS)

Balucani, M.; Nenzi, P.; Chubenko, E.; Klyshko, A.; Bondarenko, V.

2011-01-01

This article presents the study of the electrochemical deposition of zinc oxide from the non-aqueous solution based on dimethyl sulfoxide and zinc chloride into the porous silicon matrix. The features of the deposition process depending on the thickness of the porous silicon layer are presented. It is shown that after deposition process the porous silicon matrix is filled with zinc oxide nanocrystals with a diameter of 10–50 nm. The electrochemically deposited zinc oxide layers on top of porous silicon are shown to have a crystalline structure. It is also shown that zinc oxide crystals formed by hydrothermal method on the surface of electrochemically deposited zinc oxide film demonstrate ultra-violet luminescence. The effect of the porous silicon layer thickness on the morphology of the zinc oxide is shown. The structures obtained demonstrated two luminescence bands peaking at the 375 and 600 nm wavelengths. Possible applications of ZnO nanostructures, porous and continuous polycrystalline ZnO films such as gas sensors, light-emitting diodes, photovoltaic devices, and nanopiezo energy generators are considered. Aspects of integration with conventional silicon technology are also discussed.

Doping of silicon by laser-induced diffusion

International Nuclear Information System (INIS)

Pretorius, R.; Allie, M.S.

1986-01-01

This report gives information on the doping of silicon by laser-induced diffusion, modelling and heat-flow calculation, doping from evaporated layers and silicon self-diffusion during pulsed laser irradiation. In order to tailor dopant profiles accurately a knowledge of the heat flow and the melt depths attained as a function of laser energy and material type is crucial. The heat flow calculations described can be used in conjuntion with most diffusion equations in order to predict the redistribution of the deposited dopant which occurs as a result of liquid phase diffusion during the melting period. Doping of Si was carried out by evaporating this films of Sb, In and Bi 10 to 300 A thick, onto the substrates. During pulsed laser irradiation the dopant film and underlying silicon substrate is melted and the dopant incorporated into the crystal lattice during recrystallization. Radioactive 31 Si(T1/2=2,62h) was used as a tracer to measure the self-diffusion of silicon in silicon during pulsed laser (pulsewidth = 30ns, wavelength = 694nm) irradiation

Glow discharge-deposited amorphous silicon films for low-cost solar cells

Energy Technology Data Exchange (ETDEWEB)

Grabmaier, J G; Plaettner, R D; Stetter, W [Siemens A.G., Muenchen (Germany, F.R.). Forschungslaboratorien

1980-01-01

Due to their high absorption constant, glow discharge-deposited amorphous silicon (a-Si) films are of great interest for low-cost solar cells. Using SiH/sub 4/ and SiX/sub 4//H/sub 2/ (X = Cl or F) gas mixtures in an inductively or capacitively excited reactor, a-Si films with thicknesses up to several micrometers were deposited on substrates of glass, silica and silicon. The optical and electrical properties of the films were determined by measuring the IR absorption spectra, dark conductivity, photoconductivity, and photoluminescence. Hydrogen, chlorine, or fluorine were incorporated in the films in order to passivate dangling bonds in the amorphous network.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Natural gas jet flames. Topical report, January 1994-August 1995

Energy Technology Data Exchange (ETDEWEB)

Atallah, S.; Saxena, S.K.

1995-08-15

Several incidents have been reported where high pressure natural gas transmission pipelines were ruptured and the escaping gas jet ignited. It was desired to estimate the length of the ensuing jet flame. Data on large scale jet fires were collected from accidents investigated by the National Transportation Safety Board, large-scale experiments on natural gas and LPG and from observations made during the Kuwaiti oil well fires. Analytical models which predict the size of jet flames were assembled and each model was evaluated against these data. A theoretical model developed by Kalghatgi at Shell, which most closely predicted the collected data, was selected and programmed for use on a PC. In addition, a simple empirical correlation similar to API`s flare correlation was developed by the authors for application to natural gas jet flames.

III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

Science.gov (United States)

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-01-01

The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy. PMID:28777291

Research and development of photovoltaic power system. Development of novel technologies for fabrication of high quality silicon thin films for solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Kohinshitsu silicon usumaku sakusei gijutsu

Energy Technology Data Exchange (ETDEWEB)

Shimizu, T [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

1994-12-01

Described herein are the results of the FY1994 research program for development of novel technologies for fabrication of high quality thin films of silicon for solar cells. The study on the mechanisms and effects of chemical annealing reveals that the film structure greatly varies depending on substrate temperature during the hydrotreatment process, based on the tests with substrate temperature, deposition of superthin film (T1) and hydrotreatment (T2) as the variable parameters. Chemical annealing at low temperature produces a high-quality a-Si:H film of low defect content. The study on fabrication of thin polycrystalline silicon films at low temperature observes on real time the process of deposition of the thin films on polycrystalline silicon substrates, where a natural oxide film is removed beforehand from the substrate. The results indicate that a thin polycrystalline silicon film of 100% crystallinity can be formed even on a polycrystalline silicon substrate by controlling starting gas composition and substrate temperature. The layer-by-layer method is used as the means for forming the seed crystals on a glass substrate, where deposition and hydrotreatment are repeated alternately, to produce the thin crystalline silicon films of high crystallinity. 3 figs.

Ion beam figuring of CVD silicon carbide mirrors

Science.gov (United States)

Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

2017-11-01

Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

Quantum confinement and disorder in porous silicon: effects on the optical and transport properties

International Nuclear Information System (INIS)

Amato, G.; Boarino, L.; Brunetto, N.; Rossi, A.M.

1996-01-01

In this report the authors report new optical data showing that disorder in porous silicon leads to strong carrier localisation. Light emission in PS (porous silicon) is suggested to occur through transitions involving localized states

Photoconduction in silicon rich oxide films

Energy Technology Data Exchange (ETDEWEB)

Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

2009-05-01

Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

Radiation damage: special reference to gas filled radiation detectors

International Nuclear Information System (INIS)

Gaur, Sudha; Joshi, Pankaj Kumar; Rathore, Shakuntla

2012-01-01

Radiation damage is a term associated with ionizing radiation. In gas filled particle detectors, radiation damage to gases plays an important role in the device's ageing, especially in devices exposed to high intensity radiation, e.g. detector for the large hadrons collide. Ionization processes require energy above 10 eV, while splitting covalent bond in molecules and generating free radical require only 3-4 eV. The electrical discharges initiated by the ionization event by the particles result in plasma populated by large amount of free radical. The highly reactive free radical can recombine back to original molecules, or initiate a chain of free radical polymerization reaction with other molecules, yielding compounds with increasing molecular weight. These high molecular weight compounds then precipitate from gases phase, forming conductive or non-conductive deposits on the electrodes an insulating surfaces of the detector and distorting it's response. Gases containing hydrocarbon quenchers, e.g. argon-methane, are typically sensitive to ageing by polymerization; addition of oxygen tends to lower the ageing rates. Trace amount of silicon oils, present form out gassing of silicon elastomers and especially from traces of silicon lubricant tend to decompose and form deposits of silicon crystals on the surfaces. Gases mixture of argon (or xenon) with CO 2 and optimally also with 2-3 % of oxygen are highly tolerant to high radiation fluxes. The oxygen is added as noble gas with CO 2 has too high transparency for high energy photons; ozone formed from the oxygen is a strong absorber of ultra violet photons. Carbon tetra fluoride can be used as a component of the gas for high-rate detectors; the fluorine radical produced during the operation however limit the choice of materials for the chambers and electrodes (e.g. gold electrodes are required, as the fluorine radicals attack metals, forming fluorides). Addition of carbon tetra fluoride can however eliminate the