Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

Science.gov (United States)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

Directory of Open Access Journals (Sweden)

Kunook Chung

2014-09-01

Full Text Available We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO2/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs, were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, InxGa1–xN/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

Science.gov (United States)

Mitchell, Brandon; Dierolf, Volkmar; Gregorkiewicz, Tom; Fujiwara, Yasufumi

2018-04-01

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. The realization of this LED is crucial for the monolithic integration of the three primary colors and the development of nitride-based full-color high-resolution displays. In this perspective, we will address the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them. While several approaches will be mentioned, a large emphasis will be placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED. Finally, we will provide an outlook to the future of this material as a candidate for small scale displays such as mobile device screens or micro-LED displays.

Contact light-emitting diodes based on vertical ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Panin, G. N. [Dongguk University, Seoul (Korea, Republic of); Russian Academy of Sciences, Chernogolovka, Moscow district (Russian Federation); Cho, H. D.; Lee, S. W.; Kang, T. W. [Dongguk University, Seoul (Korea, Republic of)

2014-05-15

We report vertical contact light-emitting diodes (VCLEDs), that are based on heterojunctions formed by using the point contacts of n-ZnO nanorods (NRs) to the p-type semiconductor substrate and that are fabricated using a new approach to the formation of LEDs (Appl. Phys. Lett. 98, 093110 (2011)). A p-type GaN film grown on a sapphire substrate was used to form n-ZnO NRs/pGaN VCLEDs on a large area of about 4 cm{sup 2}. The VCLEDs emitted a pure blue electroluminescence with high efficiency. Electroluminescence at 470 nm, which is visible to the naked eye, started at small current of about 50 μA and is attributed to the good optical properties of the structurally perfect heterojunctions in the point contacts. The VCLED configuration allows the creation of ZnO/p-GaN nano-LEDs of high density and high-quality with a greatly reduced concentration of nonradiative defects in the active regions. The VCLEDs showed the high brightness of light required for active matrix displays and general solid-state lighting.

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

Science.gov (United States)

Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

2016-03-07

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

Doping of nano structures for light emitting diode applications

International Nuclear Information System (INIS)

Han, S. W.; Yoo, H. J.; Jeong, E. S.; Park, S. H.

2006-04-01

Lighting Emitting Diodes (LED) have been widely studied and developed for practical applications and the LED market in the world have been dramatically expended. GaN-based LEDs are mostly used. However, for diverse application, we should first solved several problems in the GaN-based LEDs, thermal heating effects and low light emitting efficiency. The thermal heating effects reduce the life time of LEDs and the low light emitting efficiency are disadvantageous in competition with electric lights. In this project, we studied the possibility of ZnO nanomaterials as LEDs. We have developed a techniques to fabricated reproducible ZnO nanorod arrays on various substrates with 40 - 100 nm diameters. We have successfully fabricated two-dimensional ZnO film growth on one-dimensional nanorods. We have also systematically studied ZnO nanorod growth on GaN and Al 2 O 3 substrated with different proton treatments to understand the ZnO nanorod growth mechanism. These techniques will be used to develop p-ZnO/n-ZnO nanomaterials as LEDs

Amber light-emitting diode comprising a group III-nitride nanowire active region

Science.gov (United States)

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Plasmon enhanced green GaN light-emitting diodes - Invited paper

DEFF Research Database (Denmark)

Ou, Haiyan; Fadil, Ahmed; Iida, Daisuke

in spectral design, more compact etc. TheIII-nitride (GaN, InNetc.) semiconductors are attracting a lot of research effort because the combination of both could emit light with wavelength range from UV to infrared. Basically one material platform could provide all the solutions to light sources.However huge...... nanosphere lithography. For both cases, emission enhancement is demonstrated. For periodic Ag nanoparicles, aphotoluminescence enhancement of 2.7 is observed with a nanodisk diameter of 330 nm.It is found that an optimalpitch exists for a given particle size.For the random Ag nanoparticles,low temperature...

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

Science.gov (United States)

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations

Science.gov (United States)

Monavarian, Morteza

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the "Green Gap", is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the "quantum confined Stark effect") and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1100)-oriented (mo-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology

Irradiation Pattern Analysis for Designing Light Sources-Based on Light Emitting Diodes

International Nuclear Information System (INIS)

Rojas, E.; Stolik, S.; La Rosa, J. de; Valor, A.

2016-01-01

Nowadays it is possible to design light sources with a specific irradiation pattern for many applications. Light Emitting Diodes present features like high luminous efficiency, durability, reliability, flexibility, among others as the result of its rapid development. In this paper the analysis of the irradiation pattern of the light emitting diodes is presented. The approximation of these irradiation patterns to both, a Lambertian, as well as a Gaussian functions for the design of light sources is proposed. Finally, the obtained results and the functionality of bringing the irradiation pattern of the light emitting diodes to these functions are discussed. (Author)

Carrier-injection studies in GaN-based light-emitting-diodes

Science.gov (United States)

Nguyen, Dinh Chuong; Vaufrey, David; Leroux, Mathieu

2015-09-01

Although p-type GaN has been achieved by Mg doping, the low hole-mobility still remains a difficulty for GaN-based light-emitting diodes (LEDs). Due to the lack of field-dependent-velocity model for holes, in GaN-based LED simulations, the hole mobility is usually supposed to remain constant. However, as the p-GaN-layer conductivity is lower than the n-GaN-layer conductivity, a strong electric-field exists in the p-side of an LED when the applied voltage exceeds the LED's built-in voltage. Under the influence of this field, the mobilities of electrons and holes are expected to decrease. Based on a field-dependent-velocity model that is usually used for narrow-bandgap materials, an LED structure is modelled with three arbitrarily chosen hole saturation-velocities. The results show that a hole saturation-velocity lower than 4x106 cm/s can negatively affect the LED's behaviors.

Background story of the invention of efficient blue InGaN light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Nakamura, Shuji [University of California, Santa Barbara, CA (United States)

2015-06-15

Shuji Nakamura discovered p-type doping in Gallium Nitride (GaN) and developed blue, green, and white InGaN based light emitting diodes (LEDs) and blue laser diodes (LDs). His inventions made possible energy efficient, solid-state lighting systems and enabled the next generation of optical storage. Together with Isamu Akasaki and Hiroshi Amano, he is one of the three recipients of the 2014 Nobel Prize in Physics. In his Nobel lecture, Shuji Nakamura gives an overview of this research and the story of his inventions. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

OpenAIRE

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incand...

Natural substrate lift-off technique for vertical light-emitting diodes

Science.gov (United States)

Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen

2014-04-01

Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.

Azimuthal anisotropy of light extraction from photonic crystal light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lai, Chun-Feng; Lu, T.C.; Wang, S.C. [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Chao, C.H.; Hsueh, H.T.; Wang, J.F.T.; Yeh, W.Y.; Chi, J.Y. [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China); Kuo, H.C.

2008-07-01

Photonic crystal (PhC) light-emitting diodes (LEDs) exhibiting anisotropic light extraction have been investigated experimentally and theoretically. It is found that the anisotropic light extraction strongly depends on the lattice constant and orientation. Optical images of the anisotropy in the azimuthal direction are obtained using annular structure with triangular lattice. 6-fold symmetric light extraction patterns with varying number of petals are observed. More petals in multiple of 6 appear in the observed image with lattice constant increasing. This anisotropic behavior suggests a new means to optimize the PhC design of GaN LED for light extraction. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Micro-light-emitting-diode array with dual functions of visible light communication and illumination

International Nuclear Information System (INIS)

Huang Yong; Guo Zhi-You; Sun Hui-Qing; Huang Hong-Yong

2017-01-01

We demonstrate high-speed blue 4 × 4 micro-light-emitting-diode (LED) arrays with 14 light-emitting units (two light-emitting units are used as the positive and negative electrodes for power supply, respectively) comprising multiple quantum wells formed of GaN epitaxial layers grown on a sapphire substrate, and experimentally test their applicability for being used as VLC transmitters and illuminations. The micro-LED arrays provide a maximum −3-dB frequency response of 60.5 MHz with a smooth frequency curve from 1 MHz to 500 MHz for an optical output power of 165 mW at an injection current of 30 mA, which, to our knowledge, is the highest response frequency ever reported for blue GaN-based LEDs operating at that level of optical output power. The relationship between the frequency and size of the device single pixel diameter reveals the relationship between the response frequency and diffusion capacitance of the device. (paper)

Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow...

Recent developments in white light emitting diodes

Science.gov (United States)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application

Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

Science.gov (United States)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, GaN-based yellow light-emitting diodes (LEDs) were homoepitaxially grown on free-standing (0001) GaN substrates by metal-organic chemical vapor deposition. X-ray diffraction (XRD), photoluminescence (PL), and electroluminescence (EL) measurements were conducted to investigate the structural, optical, and electrical properties of the yellow LED. The XRD measurement results showed that the InGaN/GaN multiple quantum wells (MQWs) in the LED structure have good periodicity because the distinct MQWs related higher order satellite peaks can be clearly observed from the profile of 2θ-ω XRD scan. The low temperature (10 K) and room temperature PL measurement results yield an internal quantum efficiency of 16% for the yellow LED. The EL spectra of the yellow LED present well Gaussian distribution with relatively low linewidth (47-55 nm), indicating the homogeneous In-content in the InGaN quantum well layers in the yellow LED structure. It is believed that this work will aid in the future development of GaN on GaN LEDs with long emission wavelength.

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Top-emitting organic light-emitting diodes.

Science.gov (United States)

Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

2011-11-07

We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

Science.gov (United States)

Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

2015-03-01

Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

Current path in light emitting diodes based on nanowire ensembles

International Nuclear Information System (INIS)

Limbach, F; Hauswald, C; Lähnemann, J; Wölz, M; Brandt, O; Trampert, A; Hanke, M; Jahn, U; Calarco, R; Geelhaar, L; Riechert, H

2012-01-01

Light emitting diodes (LEDs) have been fabricated using ensembles of free-standing (In, Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron-beam-induced current analysis, cathodoluminescence as well as biased μ-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In, Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect. (paper)

Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer

Energy Technology Data Exchange (ETDEWEB)

Kim, Yong Deok; Oh, Seung Kyu; Park, Min Joo; Kwak, Joon Seop, E-mail: jskwak@sunchon.ac.kr

2016-10-15

Highlights: • A nitrogen implanted current-blocking layer was successfully demonstrated. • Light-extraction efficiency and radiant intensity was increased by more than 20%. • Ion implantation was successfully implemented in GaN based light-emitting diodes. - Abstract: GaN-based light emitting diodes (LEDs) with a nitrogen implanted current-blocking layer (CBL) were successfully demonstrated for improving the light extraction efficiency (LEE) and radiant intensity. The LEE and radiant intensity of the LEDs with a shallow implanted CBL with nitrogen was greatly increased by more than 20% compared to that of a conventional LED without the CBL due to an increase in the effective current path, which reduces light absorption at the thick p-pad electrode. Meanwhile, deep implanted CBL with a nitrogen resulted in deterioration of the LEE and radiant intensity because of formation of crystal damage, followed by absorption of the light generated at the multi-quantum well(MQW). These results clearly suggest that ion implantation method, which is widely applied in the fabrication of Si based devices, can be successfully implemented in the fabrication of GaN based LEDs by optimization of implanted depth.

White organic light emitting diodes based on fluorene-carbazole dendrimers

International Nuclear Information System (INIS)

Usluer, Özlem; Demic, Serafettin; Kus, Mahmut; Özel, Faruk; Serdar Sariciftci, Niyazi

2014-01-01

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m 2 and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films

Organic light emitting diode with light extracting electrode

Energy Technology Data Exchange (ETDEWEB)

Bhandari, Abhinav; Buhay, Harry

2017-04-18

An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

Science.gov (United States)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

White organic light emitting diodes based on fluorene-carbazole dendrimers

Energy Technology Data Exchange (ETDEWEB)

Usluer, Özlem, E-mail: usluerozlem@yahoo.com.tr [Department of Chemistry, Muğla Sıtkı Koçman University, 48000 Muğla (Turkey); Demic, Serafettin [Department of Materials Science and Engineering, Izmir Katip Çelebi University, 35620 Çiğli, Izmir (Turkey); Kus, Mahmut, E-mail: mahmutkus1@gmail.com [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Özel, Faruk [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Serdar Sariciftci, Niyazi [Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria)

2014-02-15

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m{sup 2} and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films.

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

International Nuclear Information System (INIS)

Wen Feng; Liu Deming; Huang Lirong

2010-01-01

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Wen Feng; Liu Deming; Huang Lirong, E-mail: hlr5649@163.co [Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2010-10-15

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

Science.gov (United States)

Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

2017-06-01

Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m-2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.

Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes

International Nuclear Information System (INIS)

Yang, Yujue; Ma, Ping; Wei, Xuecheng; Yan, Dan; Wang, Yafang; Zeng, Yiping

2014-01-01

By designing the quantum well structure with the introduction of GaN and InN interlayers into the InGaN wells, the carrier localization is enhanced by demonstrating temperature-dependent photoluminescence (PL) measurements. Two emission peaks corresponding to In-rich localized state and quantum well ground state emissions are observed from the electroluminescence (EL) spectra, which demonstrates that the phase separation takes place in our designed structures and the enhanced phase separation is most likely the dominated mechanism for the formation of In-rich localized states, accounting for the stronger localization and hence improved light-emission characteristics. Therefore, it is suggested that enhancing localization is possible, to some extent, by modulating the QW structures with the introduction of the GaN and InN interlayers for superior light-emission performances in InGaN-based light-emitting diodes (LEDs). Moreover, the nonradiative channel probably associated with InN droplet is proved to be existent from the Arrhenius plots in our InGaN–delta-InN MQW structure. - Highlights: • By designing the quantum well structure with the introduction of GaN and InN interlayers into the InGaN wells, the carrier localization is enhanced. • Two emission peaks observed from electroluminescence (EL) spectra demonstrate that the enhanced phase separation is most likely the dominated mechanism for the formation of In-rich localized states, accounting for the stronger localization. • The nonradiative channel associated with InN droplet is proved to be existent from the Arrhenius plots

GaN-based light-emitting diodes on various substrates: a critical review.

Science.gov (United States)

Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Wang, Haiyan; Lin, Zhiting; Zhou, Shizhong

2016-05-01

GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrate for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality III-nitride films on those substrates for various reasons. However, by developing a variety of techniques, distincts progress has been made during the past decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues is detailed. The corresponding solutions for III-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates. This is very useful for understanding the progress in this field of physics. In this review, we also speculate on the prospects for LEDs on unconventional substrates.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-01-01

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.

2016-01-26

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Science.gov (United States)

Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

2018-06-08

Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

International Nuclear Information System (INIS)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

2002-01-01

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

Perovskite Materials for Light-Emitting Diodes and Lasers.

Science.gov (United States)

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reliability analysis of GaN-based light emitting diodes for solid state illumination

International Nuclear Information System (INIS)

Yang Ling; Ma Xiaohua; Feng Qian; Hao Yue

2008-01-01

In this paper, we have discussed the effect of electrical stress on GaN light emitting diode (LED). With the lapse of time, the LED with an applied large current stress can reduce its current more than without such a stress under a large forward-voltage drop. Its scanning electron microscopy (SEM) image shows that there exist several pits on the surface of the p-metal. With an electrical stress applied, the number of pits greatly increases. We also find that the degradation of GaN LED is related to the oxidized Ni/Au ohmic contact to p-GaN. The electrical activation of H-passivated Mg acceptors is described in detail. Annealing is performed in ambient air for 10 min and the differential resistances at a forward-voltage drop of 5 V are taken to evaluate the activation of the Mg acceptors. These results suggest some mechanisms of degradation responsible for these phenomena, which are described in the paper. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Science.gov (United States)

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

A charge inverter for III-nitride light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Geng, Chong; Xu, Shu [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401 (China); Demir, Hilmi Volkan, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey); Sun, Xiao Wei, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronic Engineering, College of Engineering, South University of Science and Technology, 1088 Xue-Yuan Road, Nanshan, Shenzhen, Guangdong 518055 (China)

2016-03-28

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO{sub 2} insulator layer on the p{sup +}-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p{sup +}-GaN and SiO{sub 2} insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO{sub 2} layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p{sup +}-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm{sup 2} LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

A charge inverter for III-nitride light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Zhang, Yonghui; Bi, Wengang; Geng, Chong; Xu, Shu; Demir, Hilmi Volkan; Sun, Xiao Wei

2016-01-01

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO 2 insulator layer on the p + -GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p + -GaN and SiO 2 insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO 2 layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p + -GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm 2 LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

High-quality vertical light emitting diodes fabrication by mechanical lift-off technique

Science.gov (United States)

Tu, Po-Min; Hsu, Shih-Chieh; Chang, Chun-Yen

2011-10-01

We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2×109 to 1×108 cm-2. Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process.

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu; Voznyy, Oleksandr; Liu, Mengxia; Yuan, Mingjian; Ip, Alexander H.; Ahmed, Osman S.; Levina, Larissa; Kinge, Sachin; Hoogland, Sjoerd; Sargent, Edward H.

2015-01-01

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport

Optical and electrical improvements of semipolar (1 1 −2 2) GaN-based light emitting diodes by Si doping of n-GaN template

International Nuclear Information System (INIS)

Lee, Jae-Hwan; Han, Sang-Hyun; Song, Ki-Ryong; Lee, Sung-Nam

2014-01-01

Highlights: • In semipolar GaN, Si-doping is effective to reduce out-of plane PSFs toward [1−100]. • Interfacial quality of semipolar QWs was improved by increasing SiH4 flow of n-GaN. • Electrical properties of semipolar GaN were improved by increasing Si doping. • Light output power of semipolar LEDs were increased with SiH4 flow rate of n-type GaN. - Abstract: We report that the performance of semipolar (1 1 −2 2) GaN-based light-emitting diodes (LEDs) was improved by increasing the Si-doping concentration of n-type GaN templates. In-plane and out-of plane high-resolution X-ray diffraction demonstrated that crystal defects such as threading dislocation, partial stacking faults and basal stacking faults, were significantly decreased by increasing the Si-doping concentration. This resulted in the increase of carrier mobility due to reduction of the defect-scattering effect. Furthermore, the quality of InGaN/GaN quantum-well interfaces was improved by increasing the Si-doping concentration of the n-type GaN template. Based on these results, we suggest that the light-output power and operation voltage of semipolar (1 1 −2 2) GaN-based LEDs would be improved by increasing Si doping concentration of n-type GaN templates

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

International Nuclear Information System (INIS)

Fang Hao; Long Hao; Sang Li-Wen; Qi Sheng-Li; Xiong Chang; Yu Tong-Jun; Yang Zhi-Jian; Zhang Guo-Yi

2011-01-01

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm 2 /(V·s) and 460 Ω/□ respectively. Owing to the significant effect of the SiN x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

International Nuclear Information System (INIS)

Wu, F.; Dawei, Z.; Shuzhen, S.; Yiming, Z.; Songlin, Z.; Jian, X.

2012-01-01

We have investigated the feasibility of employing quantum dot (QD) phosphor-based light-emitting diodes (LEDs) in aviation applications that request Night Vision Imaging Systems (NVIS) compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nano crystal QDs can be tailored by varying the nano crystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

Evaluation of light-emitting diode beacon light fixtures.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Chiao-Wen Yeh

2010-03-01

Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Science.gov (United States)

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

CERN Document Server

Ohtsu, Motoichi

2016-01-01

This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

White-light-emitting diode based on a single-layer polymer

Science.gov (United States)

Wang, B. Z.; Zhang, X. P.; Liu, H. M.

2013-05-01

A broad-band light-emitting diode was achieved in a single-layer device based on pure poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB). Electromer emission was observed in the red with a center wavelength of about 620 nm in electroluminescence (EL) spectrum. This kind of emission exhibits strong dependence on the thickness of the PFB layer, so that the shape of the EL spectrum may be adjusted through changing the thickness of the active polymer layer to balance between the intrinsic PFB emission in the blue and the electromer emission in the red. Thus, white light emission may be achieved from such a single-layer single-material diode.

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Science.gov (United States)

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

2015-03-01

Reduced electric field in semipolar (1122) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar (1122) GaN grown by metal-organic chemical vapor deposition on planar m-plane sapphire substrates. Indium content in the semipolar material was compared with that in polar c-plane samples grown under the same conditions simultaneously side by side on the same holder. The investigated samples incorporated dual GaN/InGaN/GaN double heterostructures with 3nm wide wells. In order to improve optical quality, both polar and semipolar templates were grown using an in-situ epitaxial lateral overgrowth (ELO) technique. Indium incorporation efficiency was derived from the comparison of PL spectra measured on the semipolar and polar structures at the highest excitation density, which allowed us to minimize the effect of quantum confined Stark effect on the emission wavelength. Our data suggests increased indium content in the semipolar material by up to 3.0%, from 15% In in c- GaN to 18% In in (1122) GaN.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

Science.gov (United States)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

2016-07-15

Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P

Directory of Open Access Journals (Sweden)

N. K. Zhumashev

2016-01-01

Full Text Available Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The heterostructures were grown from metal-organic chemical compounds with the use of vapor-phase epitaxial technique. The spectra were recorded under pulse excitation with the use of computer-controlled installation employing MDR-23 grating monochromator and a lock-in amplifier. InSb photodiode was used as a detector. Comparative study of electroluminescence spectra of the diodes was carried out at the temperatures equal to 300 K and 77 K. We compared the obtained data with the calculation results of the band diagrams of the heterostructures. Main Results. As a result of comparative study of the electroluminescence spectra of the diodes recorded at 300 K and 77 K we have established that increasing of their efficiency is hindered by substantial influence of Auger recombination. For the first time at 77 К we have observed the effect of stimulated emission from InAsSb active layer in light-emitting structures made of InAs/InAsSb/InAsSbP. For heterostructures with quantum wells InAs/(InAs/InAsSb/InAsSbP we have found out that at 77 К the carrier recombination occurs outside quantum wells, which points out to the insufficient carrier localization in the active layer. Thus, we have shown that the efficiency of mid-infrared light-emitting diodes based on InAs(Sb,P can be increased via suppression of Auger-recombination and improvement of carrier localization in the active region. Practical Relevance. The results of the study can be used for development of heterostructures for mid-infrared light-emitting diodes.

Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

Directory of Open Access Journals (Sweden)

Fengbing Wu

2012-01-01

Full Text Available We have investigated the feasibility of employing quantum dot (QD phosphor-based light-emitting diodes (LEDs in aviation applications that request Night Vision Imaging Systems (NVIS compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan; Tsai, Meng Lin; He, Jr-Hau

2015-01-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

Science.gov (United States)

Morkoç, H; Mohammad, S N

1995-01-06

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

Highly efficient silicon light emitting diode

NARCIS (Netherlands)

Le Minh, P.; Holleman, J.; Wallinga, Hans

2002-01-01

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu

2015-12-22

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

Organic light emitting diode with surface modification layer

Science.gov (United States)

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

Directory of Open Access Journals (Sweden)

Hsin-Ying Lee

2014-01-01

Full Text Available The GaN-based flip-chip white light-emitting diodes (FCWLEDs with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.

Dislocation-related trap levels in nitride-based light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, Bologna 40127 (Italy); Meneghini, Matteo; Zanoni, Enrico [Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-05-26

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

Dislocation-related trap levels in nitride-based light emitting diodes

International Nuclear Information System (INIS)

Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna; Meneghini, Matteo; Zanoni, Enrico; Zhu, Dandan; Humphreys, Colin

2014-01-01

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10 9 cm −2 and a low dislocation density of 3 × 10 8 cm −2 . Three trapping levels for electrons were revealed, named A, A1, and B, with energies E A  ≈ 0.04 eV, E A1  ≈ 0.13 eV, and E B  ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

Study of photophysical processes in organic light-emitting diodes based on light-emission profile reconstruction

NARCIS (Netherlands)

Carvelli, M.

2012-01-01

Organic light-emitting diodes (OLEDs) are emerging as a promising option for energy-efficient, flexible light sources. A key factor that needs to be measured and controlled is the shape of the emission profile, i.e. the spatial distribution of the emitting excitons across the active layer thickness.

Characteristics of organic light emitting diodes with copper iodide as injection layer

Energy Technology Data Exchange (ETDEWEB)

Stakhira, P., E-mail: stakhira@polynet.lviv.u [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Cherpak, V.; Volynyuk, D.; Ivastchyshyn, F. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Hotra, Z. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Rzeszow University of Technology, W. Pola 2, Rzeszow, 35-959 (Poland); Tataryn, V. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Luka, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2010-09-30

We have studied the use of a thin copper iodide (CuI) film as an efficient injection layer of holes from indium tin oxide (ITO) anode in a light-emitting diode structure based on tris-8-hydroxyquinoline aluminium (Alq3). The results of impedance analysis of two types of diode structures, ITO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al and ITO/Alq3/poly(ethylene glycol) dimethyl ether/Al, are presented. Comparative analysis of their current density-voltage, luminance-voltage and impedance characteristics shows that presence of CuI layer facilitates injection of holes from ITO anode into the light-emitting layer Alq3 and increases electroluminescence efficiency of the organic light emitting diodes.

Graphene as current spreading layer on AlGaInP light emitting diodes

Science.gov (United States)

Guo, Xia; Feng, Yajie; Liu, Qiaoli; Hu, Anqi; He, Xiaoying; Hu, Zonghai

2018-05-01

Due to high transmittance and high mobility, graphene is one of the promising candidates for a current spreading layer, which is crucial to light emitting diode (LED) performance. In this paper, improved AlGaInP LED performance was reported after graphene was applied on the GaP surface. Due to its lowered work function difference than with the GaN material, the electrical properties remain the same without additional voltage bias. The light output power is enhanced by about 40% under the current injection of 5 mA at room temperature, which was confirmed by the light emission profile analysis in this study. Such results indicate that raphene is a promising candidate as a current spreading layer under low current injection.

Warm White Light-Emitting Diodes Based on a Novel Orange Cationic Iridium(III) Complex.

Science.gov (United States)

Tang, Huaijun; Meng, Guoyun; Chen, Zeyu; Wang, Kaimin; Zhou, Qiang; Wang, Zhengliang

2017-06-16

A novel orange cationic iridium(III) complex [(TPTA)₂Ir(dPPOA)]PF₆ (TPTA: 3,4,5-triphenyl-4 H -1,2,4-triazole, dPPOA: N,N-diphenyl-4-(5-(pyridin-2-yl)-1,3,4-oxadiazol-2-yl)aniline) was synthesized and used as a phosphor in light-emitting diodes (LEDs). [(TPTA)₂Ir(dPPOA)]PF₆ has high thermal stability with a decomposition temperature ( T d ) of 375 °C, and its relative emission intensity at 100 °C is 88.8% of that at 25°C. When only [(TPTA)₂Ir(dPPOA)]PF₆ was used as a phosphor at 6.0 wt % in silicone and excited by a blue GaN (GaN: gallium nitride) chip (450 nm), an orange LED was obtained. A white LED fabricated by a blue GaN chip (450 nm) and only yellow phosphor Y₃Al₅O 12 :Ce 3+ (YAG:Ce) (1.0 wt % in silicone) emitted cold white light, its CIE (CIE: Commission International de I'Eclairage ) value was (0.32, 0.33), color rendering index (CRI) was 72.2, correlated color temperature (CCT) was 6877 K, and luminous efficiency ( η L ) was 128.5 lm∙W -1 . Such a cold white LED became a neutral white LED when [(TPTA)₂Ir(dPPOA)]PF₆ was added at 0.5 wt %; its corresponding CIE value was (0.35, 0.33), CRI was 78.4, CCT was 4896 K, and η L was 85.2 lm∙W -1 . It further became a warm white LED when [(TPTA)₂Ir(dPPOA)]PF₆ was added at 1.0 wt %; its corresponding CIE value was (0.39, 0.36), CRI was 80.2, CCT was 3473 K, and η L was 46.1 lm∙W -1 . The results show that [(TPTA)₂Ir(dPPOA)]PF₆ is a promising phosphor candidate for fabricating warm white LEDs.

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2013-01-01

Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on th...

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya

2017-05-08

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya; Ng, Tien Khee; Zhao, Chao; Janjua, Bilal; Alyamani, Ahmed; El-desouki, Munir; Ooi, Boon S.

2017-01-01

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform

Energy Technology Data Exchange (ETDEWEB)

Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.; Lu, Z. H., E-mail: zhenghong.lu@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4 (Canada); Wang, X.; Wang, S., E-mail: wangs@chem.queensu.ca [Department of Chemistry, Queen' s University, 90 Bader Lane, Kingston, Ontario K7L 3N6 (Canada); Yang, C. [Department of Chemistry, Wuhan University, Wuhan 430072 (China)

2014-04-28

We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate

Science.gov (United States)

Zhu, Youhua; Wang, Meiyu; Li, Yi; Tan, Shuxin; Deng, Honghai; Guo, Xinglong; Yin, Haihong; Egawa, Takashi

2017-03-01

GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-ray diffraction, and transmission electron microscope measurements. It has been revealed that a significant improvement in crystalline quality of GaN and superlattice epitaxial layers can be achieved by using 3C-SiC as IL. Regarding of electrical and optical characteristics, it is clearly observed that the LEDs with its IL have a smaller leakage current and higher light output power comparing with the LEDs without IL. The better performance of LEDs using 3C-SiC IL can be contributed to both of the improvements in epitaxial layers quality and light extraction efficiency. As a consequence, in terms of optical property, a double enhancement of the light output power and external quantum efficiency has been realized.

Room temperature current injection polariton light emitting diode with a hybrid microcavity.

Science.gov (United States)

Lu, Tien-Chang; Chen, Jun-Rong; Lin, Shiang-Chi; Huang, Si-Wei; Wang, Shing-Chung; Yamamoto, Yoshihisa

2011-07-13

The strong light-matter interaction within a semiconductor high-Q microcavity has been used to produce half-matter/half-light quasiparticles, exciton-polaritons. The exciton-polaritons have very small effective mass and controllable energy-momentum dispersion relation. These unique properties of polaritons provide the possibility to investigate the fundamental physics including solid-state cavity quantum electrodynamics, and dynamical Bose-Einstein condensates (BECs). Thus far the polariton BEC has been demonstrated using optical excitation. However, from a practical viewpoint, the current injection polariton devices operating at room temperature would be most desirable. Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature. The exciton-polariton emission from the LED at photon energy 3.02 eV under strong coupling condition is confirmed through temperature-dependent and angle-resolved electroluminescence spectra.

Evaluation of light-emitting diode beacon light fixtures : final report.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Light-Emitting Diode-Based Illumination System for In Vitro Photodynamic Therapy

OpenAIRE

Defu Chen; Huifen Zheng; Zhiyong Huang; Huiyun Lin; Zhidong Ke; Shusen Xie; Buhong Li

2012-01-01

The aim of this study is to develop a light-emitting diode- (LED-) based illumination system that can be used as an alternative light source for in vitro photodynamic therapy (PDT). This illumination system includes a red LED array composed of 70 LEDs centered at 643 nm, an air-cooling unit, and a specific-designed case. The irradiance as a function of the irradiation distance between the LED array and the sample, the homogeneity and stability of irradiation, and the effect of long-time irrad...

Degradation of light emitting diodes: a proposed methodology

International Nuclear Information System (INIS)

Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

2011-01-01

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

Top-Emitting White Organic Light-Emitting Diodes Based on Cu as Both Anode and Cathode

International Nuclear Information System (INIS)

Mu Ye; Zhang Zhen-Song; Wang Hong-Bo; Qu Da-Long; Wu Yu-Kun; Yan Ping-Rui; Li Chuan-Nan; Zhao Yi

2015-01-01

It is still challenging to obtain broadband emission covering visible light spectrum as much as possible with negligible angular dependence. In this work, we demonstrate a low driving voltage top-emitting white organic light-emitting diode (TEWOLED) based on complementary blue and yellow phosphor emitters with negligible angular dependence. The bottom copper anode with medium reflectance, which is compatible with the standard complementary metal oxide semiconductor (CMOS) technology below 0.13 μm, and the semitransparent multilayer Cs2CO3/Al/Cu cathode as a top electrode, are introduced to realize high-performance TEWOLED. Our TEWOLED achieves high efficiencies of 15.4 cd/A and 12.1 lm/W at a practical brightness of 1000 cd/m 2 at low voltage of 4 V. (paper)

Broadband mid-infrared superlattice light-emitting diodes

Science.gov (United States)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

Organic light emitting diodes with spin polarized electrodes

NARCIS (Netherlands)

Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

2003-01-01

Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

KAUST Repository

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M.; Speck, James S.; Nakamura, Shuji; Ooi, Boon S.; DenBaars, Steven P.

2017-01-01

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021

The Light-Emitting Diode as a Light Detector

Science.gov (United States)

Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

2011-01-01

A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

Growth and characterization of nonpolar (10-10) ZnO transparent conductive oxide on semipolar (11–22) GaN-based light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki-Wook; Choi, Nak-Jung [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of); Kim, Kyoung-Bo [Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon, 402-752 (Korea, Republic of); Kim, Moojin [Department of Renewable Energy, Jungwon University, 85, Munmu-ro, Goesan-eup, Goesan-gun, Chungbuk, 367-805 (Korea, Republic of); Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of)

2016-05-05

We have grown thin films of nonpolar m-plane (10-10) ZnO on a semipolar (11–22) GaN template by atomic layer deposition (ALD) at low growth temperatures (<200 °C). The surface morphology of the ZnO film is found to be an arrowhead-like structure, which is a typical surface structure of the semipolar (11–22) GaN films. On increasing the growth temperature of the ZnO films, the concentration and mobility of the charge carriers in the ZnO film are increased. However, the optical transmittance decreases with an increase in the growth temperature. Based on these results, we have fabricated semipolar (11–22) GaN-based light-emitting diodes (LEDs) with nonpolar m-plane ZnO film as a transparent conductive oxide (TCO) to improve the light extraction efficiency. In spite of a decrease in the optical transmittance, the operation voltage of semipolar (11–22) GaN-based LEDs is found to decrease with an increase in the growth temperature, which might be due to the improvements in the electrical properties and current spreading effect, resulting in an increase in the optical output power. - Highlights: • Polarity control of ZnO film grown in m-/c-sapphire and semipolar GaN template. • Achievement of high quality nonpolar m-plane ZnO flims on semipolar (11–22) GaN template. • The simultaneous improvements of carrier concentration and mobility in the nonpolar ZnO TCO flims. • Nonpolar ZnO TCO increases current spreading length and light output power of semipolar GaN-LED.

Investigations of thin p-GaN light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Light emitting diodes as a plant lighting source

Energy Technology Data Exchange (ETDEWEB)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C. [Wisconsin Center for Space Automation and Robotics, Madison, WI (United States); Tibbitts, T.W. [Univ. of Wisconsin, Madison, WI (United States)

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used in a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2012-01-01

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Science.gov (United States)

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

Directory of Open Access Journals (Sweden)

Wenyan Liu

2015-01-01

Full Text Available The quantum dot-based light-emitting diodes (QD-LEDs were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM, and power efficiency (PE. The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to the low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

The effect of various microlens parameters such as diameter and area fraction on light-extraction efficiency was systematically studied. Improvement of 4% in extraction efficiency was obtained by employing it on white light emitting diode. The area fraction of microlenses was increased up to 0.34 by reducing the spin speed.

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

Science.gov (United States)

Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

Electroluminescence enhancement for near-ultraviolet light emitting diodes with graphene/AZO-based current spreading layers

DEFF Research Database (Denmark)

Lin, Li; Ou, Yiyu; Zhu, Xiaolong

LEDs) have attracted significant research interest due to their intensive applications in various areas where indium tin oxide (ITO) is one of the most widely employed transparent conductive materials for NUV LEDs. Compared to ITO, indium-free aluminum-doped zinc oxide (AZO) has similar electrical......Near-ultraviolet light emitting diodes with different aluminum-doped zinc oxide-based current spreading layers were fabricated and electroluminescence (EL) was compared. A 170% EL enhancement was achieved by using a graphene-based interlayer. GaN-based near-ultraviolet light emitting diodes (NUV...... with a new type of current spreading layer (CSL) which combines AZO and a single-layer graphene (SLG) as an effective transparent CSL [1]. In the present work, LEDs with solo AZO CSL in Fig.1(a) and SLG/Ni/AZO-based CSL in Fig.1(b) were both fabricated for EL comparison. Standard mesa fabrication including...

Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging.

Science.gov (United States)

Pan, Caofeng; Chen, Mengxiao; Yu, Ruomeng; Yang, Qing; Hu, Youfan; Zhang, Yan; Wang, Zhong Lin

2016-02-24

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

Science.gov (United States)

Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

2013-01-23

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

The efficiency challenge of nitride light-emitting diodes for lighting

KAUST Repository

Weisbuch, Claude; Piccardo, Marco; Martinelli, Lucio; Iveland, Justin; Peretti, Jacques; Speck, James S.

2015-01-01

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

International Nuclear Information System (INIS)

Li-Wen, Sang; Zhi-Xin, Qin; Hao, Fang; Yan-Zhao, Zhang; Tao, Li; Zheng-Yu, Xu; Zhi-Jian, Yang; Bo, Shen; Guo-Yi, Zhang; Shu-Ping, Li; Wei-Huang, Yang; Hang-Yang, Chen; Da-Yi, Liu; Jun-Yong, Kang

2009-01-01

We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) on an AlN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317 nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Non-radiative recombination losses in polymer light-emitting diodes

NARCIS (Netherlands)

Kuik, M.; Koster, L. J. A.; Dijkstra, A. G.; Wetzelaer, G. A. H.; Blom, P. W. M.

We present a quantitative analysis of the loss of electroluminescence in light-emitting diodes (LEDs) based on poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV) due to the combination of non-radiative trap-assisted recombination and exciton quenching at the metallic cathode. It is

GaN based nanorods for solid state lighting

Energy Technology Data Exchange (ETDEWEB)

Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

2012-04-01

In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

Inkjet Printing of Organic Light-Emitting Diodes Based on Alcohol-Soluble Polyfluorenes

Science.gov (United States)

Odod, A. V.; Gadirov, R. M.; Solodova, T. A.; Kurtsevich, A. E.; Il'gach, D. M.; Yakimanskii, A. V.; Burtman, V.; Kopylova, T. N.

2018-04-01

Ink compositions for inkjet printing based on poly(9.9-dioctylfluorene) and its alcohol-soluble analog are created. Current-voltage, brightness-voltage, and spectral characteristics are compared for one- and twolayer polymer structures of organic light-emitting diodes. It is shown that the efficiency of the alcohol-soluble polyfluorene analog is higher compared to poly(9.9-dioctylfluorene), and the possibility of viscosity optimization is higher compared to aromatic chlorinated solvents.

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan

2015-03-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.

Efficiency enhancement of blue light emitting diodes by eliminating V-defects from InGaN/GaN multiple quantum well structures through GaN capping layer control

Science.gov (United States)

Tsai, Sheng-Chieh; Li, Ming-Jui; Fang, Hsin-Chiao; Tu, Chia-Hao; Liu, Chuan-Pu

2018-05-01

A facile method for fabricating blue light-emitting diodes (B-LEDs) with small embedded quantum dots (QDs) and enhanced light emission is demonstrated by tuning the temperature of the growing GaN capping layer to eliminate V-defects. As the growth temperature increases from 770 °C to 840 °C, not only does the density of the V-defects reduce from 4.12 ∗ 108 #/cm2 nm to zero on a smooth surface, but the QDs also get smaller. Therefore, the growth mechanism of smaller QDs assisted by elimination of V-defects is discussed. Photoluminescence and electroluminescence results show that smaller embedded QDs can improve recombination efficiency, and thus achieve higher peak intensity with smaller peak broadening. Accordingly, the external quantum efficiency of the B-LEDs with smaller QDs is enhanced, leading to a 6.8% increase in light output power in lamp-form package LEDs.

Micro and nano-structured green gallium indium nitride/gallium nitride light-emitting diodes

Science.gov (United States)

Stark, Christoph J. M.

Light-emitting diodes (LEDs) are commonly designed and studied based on bulk material properties. In this thesis different approaches based on patterns in the nano and micrometer length scale range are used to tackle low efficiency in the green spectral region, which is known as “green gap”. Since light generation and extraction are governed by microscopic processes, it is instructive to study LEDs with lateral mesa sizes scaled to the nanometer range. Besides the well-known case of the quantum size effect along the growth direction, a continuous lateral scaling could reveal the mechanisms behind the purported absence of a green gap in nanowire LEDs and the role of their extraction enhancement. Furthermore the possibility to modulate strain and piezoelectric polarization by post growth patterning is of practical interest, because the internal electric fields in conventional wurtzite GaN LEDs cause performance problems. A possible alternative is cubic phase GaN, which is free of built-in polarization fields. LEDs on cubic GaN could show the link between strong polarization fields and efficiency roll-off at high current densities, also known as droop. An additional problem for all nitride-based LEDs is efficient light extraction. For a planar GaN LED only roughly 8% of the generated light can be extracted. Novel lightextraction structures with extraction-favoring geometry can yield significant increase in light output power. To investigate the effect of scaling the mesa dimension, micro and nano-sized LED arrays of variable structure size were fabricated. The nano-LEDs were patterned by electron beam lithography and dry etching. They contained up to 100 parallel nano-stripe LEDs connected to one common contact area. The mesa width was varied over 1 μm, 200 nm, and 50 nm. These LEDs were characterized electrically and optically, and the peak emission wavelength was found to depend on the lateral structure size. An electroluminescence (EL) wavelength shift of 3 nm

Non-doped white organic light-emitting diodes based on aggregation-induced emission

Energy Technology Data Exchange (ETDEWEB)

Chen Shuming; Kwok, Hoi Sing [Center for Display Research, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Zhao Zujin; Tang, Ben Zhong, E-mail: eekwok@ust.h [Department of Chemistry, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2010-03-10

Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A{sup -1}, 4 lm W{sup -1} and brightness of 18 000 cd m{sup -2} have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

Non-doped white organic light-emitting diodes based on aggregation-induced emission

International Nuclear Information System (INIS)

Chen Shuming; Kwok, Hoi Sing; Zhao Zujin; Tang, Ben Zhong

2010-01-01

Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A -1 , 4 lm W -1 and brightness of 18 000 cd m -2 have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

High Intensity Organic Light-emitting Diodes

Science.gov (United States)

Qi, Xiangfei

This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

A new light emitting diode-light emitting diode portable carbon dioxide gas sensor based on an interchangeable membrane system for industrial applications.

Science.gov (United States)

de Vargas-Sansalvador, I M Pérez; Fay, C; Phelan, T; Fernández-Ramos, M D; Capitán-Vallvey, L F; Diamond, D; Benito-Lopez, F

2011-08-12

A new system for CO(2) measurement (0-100%) based on a paired emitter-detector diode arrangement as a colorimetric detection system is described. Two different configurations were tested: configuration 1 (an opposite side configuration) where a secondary inner-filter effect accounts for CO(2) sensitivity. This configuration involves the absorption of the phosphorescence emitted from a CO(2)-insensitive luminophore by an acid-base indicator and configuration 2 wherein the membrane containing the luminophore is removed, simplifying the sensing membrane that now only contains the acid-base indicator. In addition, two different instrumental configurations have been studied, using a paired emitter-detector diode system, consisting of two LEDs wherein one is used as the light source (emitter) and the other is used in reverse bias mode as the light detector. The first configuration uses a green LED as emitter and a red LED as detector, whereas in the second case two identical red LEDs are used as emitter and detector. The system was characterised in terms of sensitivity, dynamic response, reproducibility, stability and temperature influence. We found that configuration 2 presented a better CO(2) response in terms of sensitivity. Copyright © 2011 Elsevier B.V. All rights reserved.

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

International Nuclear Information System (INIS)

Kim, Sukwon; Kim, Tae Geun

2015-01-01

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga_2O_3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10"−"3 Ω-cm"2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga_2O_3 targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10"−"3 Ω-cm"2 contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

White emission from nano-structured top-emitting organic light-emitting diodes based on a blue emitting layer

International Nuclear Information System (INIS)

Hyun, Woo Jin; Park, Jung Jin; Park, O Ok; Im, Sang Hyuk; Chin, Byung Doo

2013-01-01

We demonstrated that white emission can be obtained from nano-structured top-emitting organic light-emitting diodes (TEOLEDs) based on a blue emitting layer (EML). The nano-structured TEOLEDs were fabricated on nano-patterned substrates, in which both optical micro-cavity and scattering effects occur simultaneously. Due to the combination of these two effects, the electroluminescence spectra of the nano-structured device with a blue EML exhibited not only blue but also yellow colours, which corresponded to the intrinsic emission of the EML and the resonant emission of the micro-cavity effect. Consequently, it was possible to produce white emission from nano-structured TEOLEDs without employing a multimode micro-cavity. The intrinsic emission wavelength can be varied by altering the dopant used for the EML. Furthermore, the emissive characteristics turned out to be strongly dependent on the nano-pattern sizes of the nano-structured devices. (paper)

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

2018-02-02

Feb 2, 2018 ... emitting diode (OLED) can be enhanced by using light- extraction ... to grow, ω should posses a positive value, which is possible only when ∂φ/∂h < 0, .... To detect small changes, first, the source LED was sta- bilized by ...

Red light emitting solid state hybrid quantum dot-near-UV GaN LED devices

International Nuclear Information System (INIS)

Song, Hongjoo; Lee, Seonghoon

2007-01-01

We produced core-shell (CdSe)ZnSe quantum dots by direct colloidal chemical synthesis and the surface-passivation method-an overcoating of the core CdSe with a larger-bandgap material ZnSe. The (CdSe)ZnSe quantum dots(QDs) play the role of a colour conversion centre. We call these quantum dots nanophosphors. We fabricated red light emitting hybrid devices of (CdSe)ZnSe QDs and a near-UV GaN LED by combining red light emitting (CdSe)ZnSe quantum dots (as a colour conversion centre) with a near-UV(NUV) GaN LED chip (as an excitation source). A few good red phosphors have been known for UV excitation wavelengths, and red phosphors for UV excitation have been sought for a long time. Here we tested the possibility of using (CdSe)ZnSe QDs as red nanophosphors for UV excitation. The fabricated red light emitting hybrid device of (CdSe)ZnSe and a NUV GaN LED chip showed a good luminance. We demonstrated that the (CdSe)ZnSe quantum dots were promising red nanophosphors for NUV excitation and that a red LED made of QDs and a NUV excitation source was a highly efficient hybrid device

Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

National Research Council Canada - National Science Library

Steckl, Andrew

2006-01-01

Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

Colour-tunable light-emitting diodes based on InP/GaP nanostructures

International Nuclear Information System (INIS)

Hatami, Fariba; Masselink, W Ted; Harris, James S

2006-01-01

We describe a novel colour-tunable light-emitting diode whose operation is based on direct band-gap emission from coupled configurations of InP quantum dots and quantum wells embedded in GaP. The control of the emission colour stems from a marked difference in the current dependence of intensities of two different emission processes. At lower currents, the emission is dominated by the 720 nm luminescence from the quantum dots and appears red; at higher currents, the emission is dominated by the 550 nm quantum-well luminescence and the perceived colour is green. Thus, we are able to tune the colour of such diodes from red to green by means of drive current. A multi-colour pixel can be realized by a single diode, with rapid switching between colour states to provide a range of colour mix

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

Science.gov (United States)

Kashiwagi, Y.; Koizumi, A.; Takemura, Y.; Furuta, S.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Fujiwara, Y.; Murahashi, K.; Ohtsuka, K.; Nakamoto, M.

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

Science.gov (United States)

Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

2012-07-01

White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

Continuous light-emitting Diode (LED) lighting for improving food quality

OpenAIRE

Lu, C; Bian, Z

2016-01-01

Lighting-emitting diodes (LEDs) have shown great potential for plant growth and development, with higher luminous efficiency and positive impact compared with other artificial lighting. The combined effects of red/blue or/and green, and white LED light on plant growth and physiology, including chlorophyll fluorescence, nitrate content and phytochemical concentration before harvest, were investigated. The results showed that continuous light (CL)\\ud exposure at pre-harvest can effectively redu...

Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

DEFF Research Database (Denmark)

Ou, Yiyu; Fadil, Ahmed; Ou, Haiyan

Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.......Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction....

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Sukwon; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

2015-09-30

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10{sup −3} Ω-cm{sup 2} with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10{sup −3} Ω-cm{sup 2} contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

Fabrication of organic light emitting diode using Molybdenum ...

Indian Academy of Sciences (India)

65

out by measuring sheet resistance, optical transmittance and surface ... role in the organic light-emitting diode (OLED) performance because it determines the .... coated glass by thermal vacuum deposition method and optimize it by using ...

Light emission mechanism of mixed host organic light-emitting diodes

Science.gov (United States)

Song, Wook; Lee, Jun Yeob

2015-03-01

Light emission mechanism of organic light-emitting diodes with a mixed host emitting layer was studied using an exciplex type mixed host and an exciplex free mixed host. Monitoring of the current density and luminance of the two type mixed host devices revealed that the light emission process of the exciplex type mixed host was dominated by energy transfer, while the light emission of the exciplex free mixed host was controlled by charge trapping. Mixed host composition was also critical to the light emission mechanism, and the contribution of the energy transfer process was maximized at 50:50 mixed host composition. Therefore, it was possible to manage the light emission process of the mixed host devices by managing the mixed host composition.

Light-Emitting Diode-Based Illumination System for In Vitro Photodynamic Therapy

Directory of Open Access Journals (Sweden)

Defu Chen

2012-01-01

Full Text Available The aim of this study is to develop a light-emitting diode- (LED- based illumination system that can be used as an alternative light source for in vitro photodynamic therapy (PDT. This illumination system includes a red LED array composed of 70 LEDs centered at 643 nm, an air-cooling unit, and a specific-designed case. The irradiance as a function of the irradiation distance between the LED array and the sample, the homogeneity and stability of irradiation, and the effect of long-time irradiation on culture medium temperature were characterized. Furthermore, the survival rate of the CNE1 cells that sensitized with 5-aminolevulinic acid after PDT treatment was evaluated to demonstrate the efficiency of the new LED-based illumination system. The obtained results show that the LED-based illumination system is a promising light source for in vitro PDT that performed in standard multiwell plate.

Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Yun, Min Ju; Kim, Hee-Dong; Kim, Kyeong Heon; Sung, Hwan Jun; Park, Sang Young; An, Ho-Myoung; Kim, Tae Geun

2013-01-01

In this paper, we report a transparent conductive oxide electrode scheme working for ultraviolet light-emitting diodes based on indium tin oxide (ITO)-rod and a single walled carbon nanotube (SWCNT) layer. We prepared four samples with ITO-rod, SWCNT/ITO-rod, ITO-rod/SWCNT, and SWCNT/ITO-rod/SWCNT structures for comparison. As a result, the sample with SWCNT/ITO-rod/SWCNT structures showed the highest transmittance over 90% at 280 nm and the highest Ohmic behavior (with sheet resistance of 5.33 kΩ/□) in the current–voltage characteristic curves. - Highlights: • Transparent conductive oxide (TCO) electrodes are proposed for UV light-emitting diodes. • These TCO electrodes are based on evaporated indium tin oxide (ITO)-rods. • Single walled carbon nanotube (SWCNT) layers are used as a current spreading layer. • The proposed TCO electrode structures show more than 90% transmittance at 280 nm

Isoelectronic Ln doping in p-GaN and its effects on InGaN light-emitting diodes

International Nuclear Information System (INIS)

Kim, C. S.; Cheong, H. S.; Kang, D. S.; Kim, J. Y.; Hong, C. H.; Suh, E. K.; Lee, H. J.; Cho, H. K.; Adesida, I.

2004-01-01

The effects of isoelectronic In doping in a Mg-doped p-GaN layer on device performance of InGaN light-emitting diodes (LED) were investigated. It was found that there was a decrease of Hall resistivity and contact resistivity in p-GaN with In doping, compared to typical Mg-doped p-GaN. Isoelectronic In doping in p-GaN seems to cause a kind of surfactant effect and/or purification effect similar to the In-doped GaN case, which exhibits a decrease of non-radiative recombination centers and an enhancement of carrier concentration. Light output power and operating voltage were improved by applying an In-doped p-GaN contact layer to the LED.

White Polymer Light-Emitting Diodes Based on Exciplex Electroluminescence from Polymer Blends and a Single Polymer.

Science.gov (United States)

Liang, Junfei; Zhao, Sen; Jiang, Xiao-Fang; Guo, Ting; Yip, Hin-Lap; Ying, Lei; Huang, Fei; Yang, Wei; Cao, Yong

2016-03-09

In this Article, we designed and synthesized a series of polyfluorene derivatives, which consist of the electron-rich 4,4'-(9-alkyl-carbazole-3,6-diyl)bis(N,N-diphenylaniline) (TPA-Cz) in the side chain and the electron-deficient dibenzothiophene-5,5-dioxide (SO) unit in the main chain. The resulting copolymer PF-T25 that did not comprise the SO unit exhibited blue light-emission with the Commission Internationale de L'Eclairage coordinates of (0.16, 0.10). However, by physically blending PF-T25 with a blue light-emitting SO-based oligomer, a novel low-energy emission correlated to exciplex emerged due to the appropriate energy level alignment of TPA-Cz and the SO-based oligomers, which showed extended exciton lifetime as confirmed by time-resolved photoluminescent spectroscopy. The low-energy emission was also identified in copolymers consisting of SO unit in the main chain, which can effectively compensate for the high-energy emission to produce binary white light-emission. Polymer light-emitting diodes based on the exciplex-type single greenish-white polymer exhibit the peak luminous efficiency of 2.34 cd A(-1) and the maximum brightness of 12 410 cd m(-2), with Commission Internationale de L'Eclairage color coordinates (0.27, 0.39). The device based on such polymer showed much better electroluminescent stability than those based on blending films. These observations indicated that developing a single polymer with the generated exciplex emission can be a novel and effective molecular design strategy toward highly stable and efficient white polymer light-emitting diodes.

High speed visible light communication using blue GaN laser diodes

Science.gov (United States)

Watson, S.; Viola, S.; Giuliano, G.; Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Targowski, G.; Watson, M. A.; White, H.; Rowe, D.; Laycock, L.; Kelly, A. E.

2016-10-01

GaN-based laser diodes have been developed over the last 20 years making them desirable for many security and defence applications, in particular, free space laser communications. Unlike their LED counterparts, laser diodes are not limited by their carrier lifetime which makes them attractive for high speed communication, whether in free space, through fiber or underwater. Gigabit data transmission can be achieved in free space by modulating the visible light from the laser with a pseudo-random bit sequence (PRBS), with recent results approaching 5 Gbit/s error free data transmission. By exploiting the low-loss in the blue part of the spectrum through water, data transmission experiments have also been conducted to show rates of 2.5 Gbit/s underwater. Different water types have been tested to monitor the effect of scattering and to see how this affects the overall transmission rate and distance. This is of great interest for communication with unmanned underwater vehicles (UUV) as the current method using acoustics is much slower and vulnerable to interception. These types of laser diodes can typically reach 50-100 mW of power which increases the length at which the data can be transmitted. This distance could be further improved by making use of high power laser arrays. Highly uniform GaN substrates with low defectivity allow individually addressable laser bars to be fabricated. This could ultimately increase optical power levels to 4 W for a 20-emitter array. Overall, the development of GaN laser diodes will play an important part in free space optical communications and will be vital in the advancement of security and defence applications.

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

International Nuclear Information System (INIS)

Kashiwagi, Y.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

2014-01-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Kashiwagi, Y., E-mail: kasiwagi@omtri.or.jp; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M. [Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan); Koizumi, A.; Fujiwara, Y. [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Takemura, Y.; Murahashi, K.; Ohtsuka, K. [Okuno Chemical Industries Co., Ltd., 2-1-25 Hanaten-nishi, Joto-ku, Osaka 536-0011 (Japan); Furuta, S. [Tomoe Works Co., Ltd., 7-13 Tsurumachi, Amagasaki 660-0092 (Japan)

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl [Inha University, Incheon (Korea, Republic of)

2014-11-15

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

International Nuclear Information System (INIS)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl

2014-01-01

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Hsu-Hung Hsueh

2016-01-01

Full Text Available The flat-top pyramid patterned sapphire substrates (FTP-PSSs have been prepared for the growth of GaN epilayers and the fabrication of lateral-type light-emitting diodes (LEDs with an emission wavelength of approximately 470 nm. Three kinds of FTP-PSSs, which were denoted as FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C, respectively, were formed through the sequential wet etching processes. The diameters of circle areas on the top regions of these three FTP-PSSs were 1, 2, and 3 μm, respectively. Based on the X-ray diffraction results, the full-width at half-maximum values of rocking curves at (002 plane for the GaN epilayers grown on conventional sapphire substrate (CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 412, 238, 346, and 357 arcsec, while these values at (102 plane were 593, 327, 352, and 372 arcsec, respectively. The SpeCLED-Ratro simulation results reveal that the LED prepared on FTP-PSS-A has the highest light extraction efficiency than that of the other devices. At an injection current of 350 mA, the output powers of LEDs fabricated on CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 157, 254, 241, and 233 mW, respectively. The results indicate that both the crystal quality of GaN epilayer and the light extraction of LED can be improved via the use of FTP-PSS, especially for the FTP-PSS-A.

Color Rendering Index Thermal Stability Improvement of Glass-Based Phosphor-Converted White Light-Emitting Diodes for Solid-State Lighting

Directory of Open Access Journals (Sweden)

Chun-Chin Tsai

2014-01-01

Full Text Available High color rendering index performance has been required for phosphor-converted warm-white light-emitting diodes (PC-WWLEDs in lighting industry. The characteristics of low-temperature fabricated phosphor (yellow: Ce3+:YAG, green: Tb3+:YAG, and red: CaAlClSiN3:Eu2+ doped glass were presented for applications to high color rendering index warm-white-light-emitting diodes. Color coordinates (x, y = (0.36, 0.29, quantum yield (QY = 55.6%, color rending index (CRI = 85.3, and correlated color temperature (CCT = 3923 K were characterized. Glass-based PC-WWLEDs was found able to maintain good thermal stability for long-time high-temperature operation. QY decay, CRI remenance, and chromaticity shift were also analyzed for glass- and silicone-based high-power PC-WLEDs by thermal aging at 150°C and 250°C for industrial test standard’s aging time 1008 hours. Better than the silicone’s, thermal stability of glass-based PC-WLEDs has been improved. The resulted high color rendering index (CRI glass phosphor potentially can be used as a phosphor layer for high-performance and low-cost PC-WLEDs used in next-generation indoor solid-state lighting applications.

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

Science.gov (United States)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-01-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the Ga

Spectral matching research for light-emitting diode-based neonatal jaundice therapeutic device light source

Science.gov (United States)

Gan, Ruting; Guo, Zhenning; Lin, Jieben

2015-09-01

To decrease the risk of bilirubin encephalopathy and minimize the need for exchange transfusions, we report a novel design for light source of light-emitting diode (LED)-based neonatal jaundice therapeutic device (NJTD). The bilirubin absorption spectrum in vivo was regarded as target. Based on spectral constructing theory, we used commercially available LEDs with different peak wavelengths and full width at half maximum as matching light sources. Simple genetic algorithm was first proposed as the spectral matching method. The required LEDs number at each peak wavelength was calculated, and then, the commercial light source sample model of the device was fabricated to confirm the spectral matching technology. In addition, the corresponding spectrum was measured and the effect was analyzed finally. The results showed that fitted spectrum was very similar to the target spectrum with 98.86 % matching degree, and the actual device model has a spectrum close to the target with 96.02 % matching degree. With higher fitting degree and efficiency, this matching algorithm is very suitable for light source matching technology of LED-based spectral distribution, and bilirubin absorption spectrum in vivo will be auspicious candidate for the target spectrum of new LED-based NJTD light source.

Effects of a highly Si-doped GaN current spreading layer at the n+-GaN/multi-quantum-well interface on InGaN/GaN blue-light-emitting diodes

International Nuclear Information System (INIS)

Kim, C. S.; Cho, H. K.; Choi, R. J.; Hahn, Y. B.; Lee, H. J.; Hong, C. H.

2004-01-01

Highly Si-doped GaN thin current spreading layer (CSL) with various carrier concentrations were inserted before the n + -GaN/multi-quantum-well (MQW) interface controlled by the growth rate and the modulated Si-doping in InGaN/GaN blue light-emitting diodes (LEDs), and their effects were investigated by using capacitance-voltage (C-V), current-voltage (I-V), and output power measurements. The LEDs with a highly Si-doped CSL show enhanced I-V characteristics and increased output power with increasing carrier concentration up to some critical point in the CSL. This means that proper high Si-doping in some limited area before the interface may enhance the device performance through the current spreading effect.

Efficient organic light emitting-diodes (OLEDs)

CERN Document Server

Chang, Yi-Lu

2015-01-01

Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhan, Lu; Xia, Fafa; Ye, Qiuyu; Xiang, Xishu; Xie, Bing, E-mail: bxie@des.ecnu.edu.cn

2015-12-15

Highlights: • Rare metals (Ga, In) are separated and recycled from waste light-emitting diodes. • Pyrolysis, physical disaggregation and vacuum metallurgy separation are proposed. • There is no hazardous materials produced in this process. - Abstract: This work develops a novel process of recycling rare metals (Ga, In) from waste light-emitting diodes using the combination of pyrolysis, physical disaggregation methods and vacuum metallurgy separation. Firstly, the pure chips containing InGaN/GaN are adopted to study the vacuum separation behavior of rare metals, which aims to provide the theoretical foundation for recycling gallium and indium from waste light-emitting diodes. In order to extract the rare-metal-rich particles from waste light-emitting diodes, pyrolysis and physical disaggregation methods (crushing, screening, grinding and secondly screening) are studied respectively, and the operating parameters are optimized. With low boiling points and high saturation vapor pressures under vacuum, gallium and indium are separated from rare-metal-rich particles by the process of evaporation and condensation. By reference to the separating parameters of pure chips, gallium and indium in waste light-emitting diodes are recycled with the recovery efficiencies of 93.48% and 95.67% under the conditions as follows: heating temperature of 1373 K, vacuum pressure of 0.01–0.1 Pa, and holding time of 60 min. There are no secondary hazardous materials generated in the whole processes. This work provides an efficient and environmentally friendly process for recycling rare metals from waste light-emitting diodes.

A white organic light emitting diode based on anthracene-triphenylamine derivatives

Science.gov (United States)

Jiang, Quan; Qu, Jianjun; Yu, Junsheng; Tao, Silu; Gan, Yuanyuan; Jiang, Yadong

2010-10-01

White organic lighting-diode (WOLED) can be used as flat light sources, backlights for liquid crystal displays and full color displays. Recently, a research mainstream of white OLED is to develop the novel materials and optimize the structure of devices. In this work a WOLED with a structure of ITO/NPB/PAA/Alq3: x% rubrene/Alq3/Mg: Ag, was fabricated. The device has two light-emitting layers. NPB is used as a hole transport layer, PAA as a blue emitting layer, Alq3: rubrene host-guest system as a yellow emitting layer, and Alq3 close to the cathode as an electron transport layer. In the experiment, the doping concentration of rubrene was optimized. WOLED 1 with 4% rubrene achieved a maximum luminous efficiency of 1.80 lm/W, a maximum luminance of 3926 cd/m2 and CIE coordinates of (0.374, 0.341) .WOLED 2 with 2% rubrene achieved a maximum luminous efficiency of 0.65 lm/W, a maximum luminance of 7495cd/m2 and CIE coordinates of (0.365,0.365).

Operation of AC Adapters Visualized Using Light-Emitting Diodes

Science.gov (United States)

Regester, Jeffrey

2016-01-01

A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal; Ng, Tien Khee; Zhao, Chao; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Priante, Davide; Shen, Chao; Elafandy, Rami T.; Anjum, Dalaver H.; Alhamoud, Abdullah A.; Alatawi, Abdullah A.; Yang, Yang; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2016-01-01

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal

2016-10-11

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

International Nuclear Information System (INIS)

Yao-Bo, Pan; Sheng-Li, Qi; Hao, Fang; Guo-Yi, Zhang; Mao-Sheng, Hao

2010-01-01

We report the enhancement of the light extraction of InGaN-based green light emitting diodes (LEDs) via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction. (cross-disciplinary physics and related areas of science and technology)

Fluorescence lifetime imaging using light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kennedy, Gordon T; Munro, Ian; Poher, Vincent; French, Paul M W; Neil, Mark A A [Blackett Laboratory, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Elson, Daniel S [Institute of Biomedical Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Hares, Jonathan D [Kentech Instruments Ltd, Unit 9, Hall Farm Workshops, South Moreton, Didcot, Oxfordshire, OX11 9AG (United Kingdom)], E-mail: gordon.kennedy@imperial.ac.uk

2008-05-07

We demonstrate flexible use of low cost, high-power light emitting diodes as illumination sources for fluorescence lifetime imaging (FLIM). Both time-domain and frequency-domain techniques have been implemented at wavelengths spanning the range 450-640 nm. Additionally, we demonstrate optically sectioned fluorescence lifetime imaging by combining structured illumination with frequency-domain FLIM.

Accuracy Improvement for Light-Emitting-Diode-Based Colorimeter by Iterative Algorithm

Science.gov (United States)

Yang, Pao-Keng

2011-09-01

We present a simple algorithm, combining an interpolating method with an iterative calculation, to enhance the resolution of spectral reflectance by removing the spectral broadening effect due to the finite bandwidth of the light-emitting diode (LED) from it. The proposed algorithm can be used to improve the accuracy of a reflective colorimeter using multicolor LEDs as probing light sources and is also applicable to the case when the probing LEDs have different bandwidths in different spectral ranges, to which the powerful deconvolution method cannot be applied.

Efficient Flexible Organic/Inorganic Hybrid Perovskite Light-Emitting Diodes Based on Graphene Anode.

Science.gov (United States)

Seo, Hong-Kyu; Kim, Hobeom; Lee, Jaeho; Park, Min-Ho; Jeong, Su-Hun; Kim, Young-Hoon; Kwon, Sung-Joo; Han, Tae-Hee; Yoo, Seunghyup; Lee, Tae-Woo

2017-03-01

Highly efficient organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) based on graphene anode are developed for the first time. Chemically inert graphene avoids quenching of excitons by diffused metal atom species from indium tin oxide. The flexible PeLEDs with graphene anode on plastic substrate show good bending stability; they provide an alternative and reliable flexible electrode for highly efficient flexible PeLEDs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

Directory of Open Access Journals (Sweden)

Hsu Chih-Neng

2013-01-01

Full Text Available This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

International Nuclear Information System (INIS)

Hao, Long; Hao, Fang; Sheng-Li, Qi; Li-Wen, Sang; Wen-Yu, Cao; Jian, Yan; Jun-Jing, Deng; Zhi-Jian, Yang; Guo-Yi, Zhang

2010-01-01

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

KAUST Repository

Guo, Wei; Banerjee, Animesh; Bhattacharya, Pallab K.; Ooi, Boon S.

2011-01-01

High density (? 1011 cm-2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit excellent uniformity in length and diameter and a broad emission is obtained by incorporating InGaN disks of varying composition along the length of the nanowires. Monolithic lighting emitting diodes were fabricated with appropriate n- and p-doping of contact layers. White light emission with chromaticity coordinates of x=0.29 and y=0.37 and a correlated color temperature of 5500-6500 K at an injection current of 50 A/ cm2 is measured. The measured external quantum efficiency of the devices do not exhibit any rollover (droop) up to an injection current density of 400 A/ cm2. © 2011 American Institute of Physics.

Determination of illuminants representing typical white light emitting diodes sources

DEFF Research Database (Denmark)

Jost, S.; Ngo, M.; Ferrero, A.

2017-01-01

is to develop LED-based illuminants that describe typical white LED products based on their Spectral Power Distributions (SPDs). Some of these new illuminants will be recommended in the update of the CIE publication 15 on colorimetry with the other typical illuminants, and among them, some could be used......Solid-state lighting (SSL) products are already in use by consumers and are rapidly gaining the lighting market. Especially, white Light Emitting Diode (LED) sources are replacing banned incandescent lamps and other lighting technologies in most general lighting applications. The aim of this work...... to complement the CIE standard illuminant A for calibration use in photometry....

Optimization of freeform lightpipes for light-emitting-diode projectors.

Science.gov (United States)

Fournier, Florian; Rolland, Jannick

2008-03-01

Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

Science.gov (United States)

Zhang, Zhikun; Du, Jinhong; Zhang, Dingdong; Sun, Hengda; Yin, Lichang; Ma, Laipeng; Chen, Jiangshan; Ma, Dongge; Cheng, Hui-Ming; Ren, Wencai

2017-02-01

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m-2 that can already satisfy the requirements for lighting sources and displays.

Polymer light emitting diodes

International Nuclear Information System (INIS)

Gautier-Thianche, Emmmanuelle

1998-01-01

We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, Martijn; Nicolai, Herman T.; Lenes, Martijn; Wetzelaer, Gert-Jan A. H.; Lu, Mingtao; Blom, Paul W. M.

2011-01-01

The recombination processes in poly(p-phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, M.; Nicolai, H.T.; Lenes, M.; Wetzelaer, G.-J.A.H.; Lu, M.; Blom, P.W.M.

2011-01-01

The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Evaluation of inorganic and organic light-emitting diode displays for signage application

Science.gov (United States)

Sharma, Pratibha; Kwok, Harry

2006-08-01

High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the

Collimating lens for light-emitting-diode light source based on non-imaging optics.

Science.gov (United States)

Wang, Guangzhen; Wang, Lili; Li, Fuli; Zhang, Gongjian

2012-04-10

A collimating lens for a light-emitting-diode (LED) light source is an essential device widely used in lighting engineering. Lens surfaces are calculated by geometrical optics and nonimaging optics. This design progress does not rely on any software optimization and any complex iterative process. This method can be used for any type of light source not only Lambertian. The theoretical model is based on point source. But the practical LED source has a certain size. So in the simulation, an LED chip whose size is 1 mm*1 mm is used to verify the feasibility of the model. The mean results show that the lenses have a very compact structure and good collimating performance. Efficiency is defined as the ratio of the flux in the illuminated plane to the flux from LED source without considering the lens material transmission. Just investigating the loss in the designed lens surfaces, the two types of lenses have high efficiencies of more than 90% and 99%, respectively. Most lighting area (possessing 80% flux) radii are no more than 5 m when the illuminated plane is 200 m away from the light source.

Tuning the colour of white polymer light emitting diodes

NARCIS (Netherlands)

Kok, M.M. de; Sarfert, W.; Paetzold, R.

2010-01-01

Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

High performance inkjet printed phosphorescent organic light emitting diodes based on small molecules commonly used in vacuum processes

Energy Technology Data Exchange (ETDEWEB)

Jung, Sung-Hoon [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Hyong-Jun, E-mail: hkim@kongju.ac.kr [Department of Chemical Engineering, Kongju National University, Cheonan, 330-717 (Korea, Republic of)

2012-09-30

High efficiency phosphorescent organic light emitting diodes (OLEDs) are realized by inkjet printing based on small molecules commonly used in vacuum processes in spite of the limitation of the limited solubility. The OLEDs used the inkjet printed 5 wt.% tris(2-phenylpyridine)iridium(III) (Ir(ppy){sub 3}) doped in 4,4 Prime -Bis(carbazol-9-yl)biphenyl (CBP) as the light emitting layer on various small molecule based hole transporting layers, which are widely used in the fabrication of OLEDs by vacuum processes. The OLEDs resulted in the high power and the external quantum efficiencies of 29.9 lm/W and 11.7%, respectively, by inkjet printing the CBP:Ir(ppy){sub 3} on a 40 nm thick 4,4 Prime ,4 Double-Prime -tris(carbazol-9-yl)triphenylamine layer. The performance was very close to a vacuum deposited device with a similar structure. - Highlights: Black-Right-Pointing-Pointer Effective inkjet printed organic light emitting diode (OLED) technique is explored. Black-Right-Pointing-Pointer Solution process on commonly used hole transporting material (HTM) is demonstrated. Black-Right-Pointing-Pointer Triplet energy overlap of HTM and emitting material is the key to the performance. Black-Right-Pointing-Pointer Simple inkjet printed OLED provides the high current efficiency of 40 cd/A.

Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes.

Science.gov (United States)

Lee, Jaeho; Han, Tae-Hee; Park, Min-Ho; Jung, Dae Yool; Seo, Jeongmin; Seo, Hong-Kyu; Cho, Hyunsu; Kim, Eunhye; Chung, Jin; Choi, Sung-Yool; Kim, Taek-Soo; Lee, Tae-Woo; Yoo, Seunghyup

2016-06-02

Graphene-based organic light-emitting diodes (OLEDs) have recently emerged as a key element essential in next-generation displays and lighting, mainly due to their promise for highly flexible light sources. However, their efficiency has been, at best, similar to that of conventional, indium tin oxide-based counterparts. We here propose an ideal electrode structure based on a synergetic interplay of high-index TiO2 layers and low-index hole-injection layers sandwiching graphene electrodes, which results in an ideal situation where enhancement by cavity resonance is maximized yet loss to surface plasmon polariton is mitigated. The proposed approach leads to OLEDs exhibiting ultrahigh external quantum efficiency of 40.8 and 62.1% (64.7 and 103% with a half-ball lens) for single- and multi-junction devices, respectively. The OLEDs made on plastics with those electrodes are repeatedly bendable at a radius of 2.3 mm, partly due to the TiO2 layers withstanding flexural strain up to 4% via crack-deflection toughening.

High-power light-emitting diode based facility for plant cultivation

Energy Technology Data Exchange (ETDEWEB)

Tamulaitis, G [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Duchovskis, P [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Bliznikas, Z [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Breive, K [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Ulinskaite, R [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Brazaityte, A [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Novickovas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Zukauskas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania)

2005-09-07

Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated.

High-power light-emitting diode based facility for plant cultivation

International Nuclear Information System (INIS)

Tamulaitis, G; Duchovskis, P; Bliznikas, Z; Breive, K; Ulinskaite, R; Brazaityte, A; Novickovas, A; Zukauskas, A

2005-01-01

Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated

Investigation of GaN LED with Be-implanted Mg-doped GaN layer

International Nuclear Information System (INIS)

Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

2004-01-01

We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-07-07

The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

Science.gov (United States)

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light emitting diodes for today's energy conscious world

Energy Technology Data Exchange (ETDEWEB)

Papanier, J

2000-10-01

The role played by light emitting diodes in back lighting, decorative illumination, emergency lighting, and automated signage are described as indicators of the many benefits and advantages of LED technology. The basic principles underlying the functioning of LEDs are explained, including the reasons behind their high efficiency in applications requiring colour. The difference between wattage and lumens is clarified; wattage refers to power consumption, whereas lumens measure brightness or light output, the measure most significant in the case of LEDs.

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

Science.gov (United States)

Ahn, Doyeol; Park, Seoung-Hwan

2016-01-01

In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology. PMID:26880097

Optoelectronical properties of InGaN quantum well light emitting diodes on semipolar GaN

Energy Technology Data Exchange (ETDEWEB)

Rass, Jens; Stascheit, Marcus; Ploch, Simon; Wernicke, Tim; Vogt, Patrick; Kneissl, Michael [Technische Universitaet Berlin, Institute of Solid State Physics, Secretariat EW6-1, Hardenbergstrasse 36, 10623 Berlin (Germany)

2011-07-01

The performance of GaN-based light emitting diodes (LEDs) is strongly affected by polarization fields along the c-axis of the crystal. Due to the resulting quantum-confined Stark effect the radiative transition rate is reduced and the emission wavelength is blue-shifted when carriers are injected. By growing the structures on semipolar or nonpolar planes the polarization fields can be significantly reduced or even eliminated. In this work, InGaN single quantum well LEDs have been grown by metal-organic vapor phase epitaxy on different semipolar surfaces such as the (10 anti 11) and (20 anti 21) plane. The optoelectronic properties such as the light output power, the emission wavelength and its shift with injection current as well as the operating voltage have been studied. By employing capacitance-voltage- and current-voltage measurements, the size of the depletion region, the build-in potential, the saturation current and the doping concentrations have been determined. LEDs with emission wavelengths ranging from the violet to the blue and green region are presented and their performance characteristics are compared to LEDs grown on the polar c-plane surface.

Performance of injection-limited polymer light-emitting diodes

NARCIS (Netherlands)

Blom, P.W.M.; Woudenberg, T.V.; Huiberts, H.; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

2002-01-01

The electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

2015-01-01

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme

Investigation of phosphorescent blue organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

2008-07-01

Recently, rapid development of phosphorescent materials has significantly improved the efficiency of organic light emitting diodes (OLEDs). By using efficient phosphorescent emitter materials white OLEDs with high power efficiency values could be demonstrated. But especially blue phosphorescent devices, due to stability issues, need to be further investigated und optimized. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated and characterized to study the impact of charge carriers on device performance.

White polymer light-emitting diodes based on star-shaped polymers with an orange dendritic phosphorescent core.

Science.gov (United States)

Zhu, Minrong; Li, Yanhu; Cao, Xiaosong; Jiang, Bei; Wu, Hongbin; Qin, Jingui; Cao, Yong; Yang, Chuluo

2014-12-01

A series of new star-shaped polymers with a triphenylamine-based iridium(III) dendritic complex as the orange-emitting core and poly(9,9-dihexylfluorene) (PFH) chains as the blue-emitting arms is developed towards white polymer light-emitting diodes (WPLEDs). By fine-tuning the content of the orange phosphor, partial energy transfer and charge trapping from the blue backbone to the orange core is realized to achieve white light emission. Single-layer WPLEDs with the configuration of ITO (indium-tin oxide)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/polymer/CsF/Al exhibit a maximum current efficiency of 1.69 cd A(-1) and CIE coordinates of (0.35, 0.33), which is very close to the pure white-light point of (0.33, 0.33). To the best of our knowledge, this is the first report on star-shaped white-emitting single polymers that simultaneously consist of fluorescent and phosphorescent species. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Color tunable hybrid light-emitting diodes based on perovskite quantum dot/conjugated polymer

Science.gov (United States)

Germino, José C.; Yassitepe, Emre; Freitas, Jilian N.; Santiago, Glauco M.; Bonato, Luiz Gustavo; de Morais, Andréia; Atvars, Teresa D. Z.; Nogueira, Ana F.

2017-08-01

Inorganic organic metal halide perovskite materials have been investigated for several technological applications, such as photovoltaic cells, lasers, photodetectors and light emitting diodes (LEDs), either in the bulk form or as colloidal nanoparticles. Recently, all inorganic Cesium Lead Halide (CsPbX3, X=Cl,Br, I) perovskite quantum dots (PQDs) were reported with high photoluminescence quantum yield with narrow emission lines in the visible wavelengths. Here, green-emitting perovskite quantum dots (PQDs) prepared by a synthetic method based on a mixture of oleylamine and oleic acid as surfactants were applied in the electroluminescent layer of hybrid LEDs in combination with two different conjugated polymers: polyvinylcarbazole (PVK) or poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The performance of the diodes and the emission color tuning upon dispersion of different concentrations of the PQDs in the polymer matrix is discussed. The presented approach aims at the combination of the optical properties of the PQDs and their interaction with wide bandgap conjugated polymers, associated with the solution processing ability of these materials.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

Science.gov (United States)

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-03-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

KAUST Repository

Lee, Changmin

2017-07-12

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021) substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors.

Science.gov (United States)

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M; Speck, James S; Nakamura, Shuji; Ooi, Boon S; DenBaars, Steven P

2017-07-24

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯)  substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

Development and evaluation of a light-emitting diode endoscopic light source

Science.gov (United States)

Clancy, Neil T.; Li, Rui; Rogers, Kevin; Driscoll, Paul; Excel, Peter; Yandle, Ron; Hanna, George; Copner, Nigel; Elson, Daniel S.

2012-03-01

Light-emitting diode (LED) based endoscopic illumination devices have been shown to have several benefits over arclamp systems. LEDs are energy-efficient, small, durable, and inexpensive, however their use in endoscopy has been limited by the difficulty in efficiently coupling enough light into the endoscopic light cable. We have demonstrated a highly homogenised lightpipe LED light source that combines the light from four Luminus LEDs emitting in the red, green, blue and violet using innovative dichroics that maximise light throughput. The light source spectrally combines light from highly divergent incoherent sources that have a Lambertian intensity profile to provide illumination matched to the acceptance numerical aperture of a liquid light guide or fibre bundle. The LED light source was coupled to a standard laparoscope and performance parameters (power, luminance, colour temperature) compared to a xenon lamp. Although the total illuminance from the endoscope was lower, adjustment of the LEDs' relative intensities enabled contrast enhancement in biological tissue imaging. The LED light engine was also evaluated in a minimally invasive surgery (MIS) box trainer and in vivo during a porcine MIS procedure where it was used to generate 'narrowband' images. Future work using the violet LED could enable photodynamic diagnosis of bladder cancer.

Weak-microcavity organic light-emitting diodes with improved light out-coupling.

Science.gov (United States)

Cho, Sang-Hwan; Song, Young-Woo; Lee, Joon-gu; Kim, Yoon-Chang; Lee, Jong Hyuk; Ha, Jaeheung; Oh, Jong-Suk; Lee, So Young; Lee, Sun Young; Hwang, Kyu Hwan; Zang, Dong-Sik; Lee, Yong-Hee

2008-08-18

We propose and demonstrate weak-microcavity organic light-emitting diode (OLED) displays with improved light-extraction and viewing-angle characteristics. A single pair of low- and high-index layers is inserted between indium tin oxide (ITO) and a glass substrate. The electroluminescent (EL) efficiencies of discrete red, green, and blue weak-microcavity OLEDs are enhanced by 56%, 107%, and 26%, respectively, with improved color purity. Moreover, full-color passive-matrix bottom-emitting OLED displays are fabricated by employing low-index layers of two thicknesses. As a display, the EL efficiency of white color was 27% higher than that of a conventional OLED display.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-05-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-01-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

KAUST Repository

Prabaswara, Aditya

2018-02-06

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Near infrared organic light-emitting diodes based on acceptor-donor-acceptor (ADA) using novel conjugated isatin Schiff bases

International Nuclear Information System (INIS)

Taghi Sharbati, Mohammad; Soltani Rad, Mohammad Navid; Behrouz, Somayeh; Gharavi, Alireza; Emami, Farzin

2011-01-01

Fabrications of a single layer organic light emitting diodes (OLEDs) based on two conjugated acceptor-donor-acceptor (ADA) isatin Schiff bases are described. The electroluminescent spectra of these materials range from 630 to 700 nm and their band gaps were measured between 1.97 and 1.77 eV. The measured maximum external quantum efficiencies (EQE) for fabricated OLEDs are 0.0515% and 0.054% for two acceptor-donor-acceptor chromophores. The Commission International De L'Eclairage (CIE) (1931) coordinates of these two compounds were attained and found to be (0.4077, 0.4128) and (0.4411, 0.4126) for two used acceptor-donor-acceptor chromophores. The measured I-V curves demonstrated the apparent diode behavior of two ADA chromophores. The turn-on voltages in these OLEDs are directly dependent on the thickness. These results have demonstrated that ADA isatin Schiff bases could be considered as promising electroluminescence-emitting materials for fabrication of OLEDs.

Light-emitting diodes based on nontoxic zinc-alloyed silver-indium-sulfide (AIZS) nanocrystals

Science.gov (United States)

Bhaumik, Saikat; Guchhait, Asim; Pal, Amlan J.

2014-04-01

We report solution-processed growth of zinc-alloyed silver-indium-sulfide (AIZS) nanocrystals followed by fabrication and characterization of light-emitting diodes (LEDs) based on such nanostructures. While growing the low dimensional crystals, we vary the ratio between the silver and zinc contents that in turn tunes the bandgap and correspondingly their photoluminescence (PL) emission. We also dope the AIZS nanocrystals with manganese, so that their PL emission, which appears due to a radiative transition between the d-states of the dopants, becomes invariant in energy when the diameter of the quantum dots or the dopant concentration in the nanostructures varies. The LEDs fabricated with such undoped and manganese-doped AIZS nanocrystals emit electroluminescence (EL) that matches the PL spectrum of the respective nanomaterial. The results demonstrate examples of quantum dot LEDs (QDLEDs) based on nontoxic AIZS nanocrystals.

Photoresponse of poly(para-phenylenevinylene) light-emitting diodes

International Nuclear Information System (INIS)

Wei, X.; Raikh, M.; Vardeny, Z.V.; Yang, Y.; Moses, D.

1994-01-01

We have studied the photoresponses of poly(para-phenylene vinylene) (PPV) light-emitting diodes (LED's) with PPV derivatives sandwiched between tin oxide (ITO) and metals including calcium, aluminum, and copper. Under illumination all diodes exhibit relatively large photoconductive I(V) responses which cross the dark I(V) curve at a forward-bias voltage V 0 that scales with the difference in work functions between the ITO and metal electrodes, the open-circuit voltage saturates at V 0 and is temperature independent, and the enhanced electroluminescence intensity of the illuminated LED's correlates with the photocurrent

Safety of light emitting diodes in toys.

Science.gov (United States)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-03-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

Safety of light emitting diodes in toys

International Nuclear Information System (INIS)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-01-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

A tunable lighting system integrated by inorganic and transparent organic light-emitting diodes

Science.gov (United States)

Zhang, Jing-jing; Zhang, Tao; Jin, Ya-fang; Liu, Shi-shen; Yuan, Shi-dong; Cui, Zhao; Zhang, Li; Wang, Wei-hui

2014-05-01

A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED and OLED are tuned to produce a white color, showing different Commission Internationale d'Eclairage (CIE) chromaticity coordinates and correlated color temperatures with a wide adjustable range. Such an integration can compensate for the lack of the LED's luminance uniformity and the transparent OLED's luminance intensity.

Phosphorescent Organic Light Emitting Diodes Implementing Platinum Complexes

Science.gov (United States)

Ecton, Jeremy Exton

Organic light emitting diodes (OLEDs) are a promising approach for display and solid state lighting applications. However, further work is needed in establishing the availability of efficient and stable materials for OLEDs with high external quantum efficiency's (EQE) and high operational lifetimes. Recently, significant improvements in the internal quantum efficiency or ratio of generated photons to injected electrons have been achieved with the advent of phosphorescent complexes with the ability to harvest both singlet and triplet excitons. Since then, a variety of phosphorescent complexes containing heavy metal centers including Os, Ni, Ir, Pd, and Pt have been developed. Thus far, the majority of the work in the field has focused on iridium based complexes. Platinum based complexes, however, have received considerably less attention despite demonstrating efficiency's equal to or better than their iridium analogs. In this study, a series of OLEDs implementing newly developed platinum based complexes were demonstrated with efficiency's or operational lifetimes equal to or better than their iridium analogs for select cases. In addition to demonstrating excellent device performance in OLEDs, platinum based complexes exhibit unique photophysical properties including the ability to form excimer emission capable of generating broad white light emission from a single emitter and the ability to form narrow band emission from a rigid, tetradentate molecular structure for select cases. These unique photophysical properties were exploited and their optical and electrical properties in a device setting were elucidated. Utilizing the unique properties of a tridentate Pt complex, Pt-16, a highly efficient white device employing a single emissive layer exhibited a peak EQE of over 20% and high color quality with a CRI of 80 and color coordinates CIE(x=0.33, y=0.33). Furthermore, by employing a rigid, tetradentate platinum complex, PtN1N, with a narrow band emission into a

Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

OpenAIRE

Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

2006-01-01

A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from lo...

Color optimization of conjugated-polymer/InGaN hybrid white light emitting diodes by incomplete energy transfer

International Nuclear Information System (INIS)

Chang, Chi-Jung; Lai, Chun-Feng; Madhusudhana Reddy, P.; Chen, Yung-Lin; Chiou, Wei-Yung; Chang, Shinn-Jen

2015-01-01

By using the wavelength conversion method, white light emitting diodes (WLEDs) were produced by applying mixtures of polysiloxane and fluorescent polymers on InGaN based light emitting diodes. UV curable organic–inorganic hybrid materials with high refractive index (1.561), compromised optical, thermal and mechanical properties was used as encapsulants. Red light emitting fluorescent FABD polymer (with 9,9-dioctylfluorene (F), anthracene (A) and 2,1,3-benzothiadiazole (B), and 4,7-bis(2-thienyl)-2,1,3-benzothiadiazole (D) repeating units) and green light emitting fluorescent FAB polymer were used as wavelength converters. The encapsulant/fluorescent polymer mixture and InGaN produce the white light by incomplete energy transfer mechanism. WLEDs with high color rendering index (CRI, about 93), and tunable correlated color temperature (CCT) properties can be produced by controlling the composition and chemical structures of encapsulating polymer and fluorescent polymer in hybrid materials, offering cool-white and neutral-white LEDs. - Highlights: • Highly efficient white light-emitting diodes (WLEDs) were produced. • Conjugated-polymer/InGaN hybrid WLEDs by incomplete energy transfer mechanism. • WLEDs with high color-rendering index and tunable correlated color temperature. • Polysiloxane encapsulant with superior optical, mechanical and thermal properties

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo

2010-01-26

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We demonstrate organic light-emitting diodes with solution-processed graphene thin film transparent conductive anodes. The graphene electrodes were deposited on quartz substrates by spincoating of an aqueous dispersion of functionalized graphene, followed by a vacuum anneal step to reduce the sheet resistance. Small molecular weight organic materials and a metal cathode were directly deposited on the graphene anodes, resulting in devices with a performance comparable to control devices on indium-tin-oxide transparent anodes. The outcoupling efficiency of devices on graphene and indium-tin-oxide is nearly identical, in agreement with model predictions. © 2010 American Chemical Society.

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

Science.gov (United States)

Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

2015-12-01

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

Liquid metals as electrodes in polymer light emitting diodes

NARCIS (Netherlands)

Andersson, G.G.; Gommans, H.H.P.; Denier van der Gon, A.W.; Brongersma, H.H.

2003-01-01

We demonstrate that liquid metals can be used as cathodes in light emitting diodes (pLEDs). The main difference between the use of liquid cathodes and evaporated cathodes is the sharpness of the metal–polymer interface. Liquid metal cathodes result in significantly sharper metal–organic interfaces

Study of electrical fatigue by defect engineering in organic light-emitting diodes

International Nuclear Information System (INIS)

Gassmann, Andrea; Yampolskii, Sergey V.; Klein, Andreas; Albe, Karsten; Vilbrandt, Nicole; Pekkola, Oili; Genenko, Yuri A.; Rehahn, Matthias; Seggern, Heinz von

2015-01-01

Graphical abstract: - Highlights: • Electrical fatigue is investigated in PPV-based polymer light-emitting diodes. • Bromide defects remaining from Gilch synthesis limit PLED lifetime. • Electrical stress yields lower hole mobility and transition to dispersive transport. • Triplet excitons reduce lifetime and EL-emission-induced degradation observed. • Self-consistent drift-diffusion model for charge carrier injection and transport. - Abstract: In this work the current knowledge on the electrical degradation of polymer-based light-emitting diodes is reviewed focusing especially on derivatives of poly(p-phenylene-vinylene) (PPV). The electrical degradation will be referred to as electrical fatigue and is understood as mechanisms, phenomena and material properties that change during continuous operation of the device at constant current. The focus of this review lies especially on the effect of chemical synthesis on the transport properties of the organic semiconductor and the device lifetimes. In addition, the prominent transparent conductive oxide indium tin oxide as well as In 2 O 3 will be reviewed and how their properties can be altered by the processing conditions. The experiments are accompanied by theoretical modeling shining light on how the change of injection barriers, charge carrier mobility or trap density influence the current–voltage characteristics of the diodes and on how and which defects form in transparent conductive oxides used as anode

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo; Agrawal, Mukul; Becerril, Héctor A.; Bao, Zhenan; Liu, Zunfeng; Chen, Yongsheng; Peumans, Peter

2010-01-01

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We

Three-Dimensional Hetero-Integration of Faceted GaN on Si Pillars for Efficient Light Energy Conversion Devices.

Science.gov (United States)

Kim, Dong Rip; Lee, Chi Hwan; Cho, In Sun; Jang, Hanmin; Jeon, Min Soo; Zheng, Xiaolin

2017-07-25

An important pathway for cost-effective light energy conversion devices, such as solar cells and light emitting diodes, is to integrate III-V (e.g., GaN) materials on Si substrates. Such integration first necessitates growth of high crystalline III-V materials on Si, which has been the focus of many studies. However, the integration also requires that the final III-V/Si structure has a high light energy conversion efficiency. To accomplish these twin goals, we use single-crystalline microsized Si pillars as a seed layer to first grow faceted Si structures, which are then used for the heteroepitaxial growth of faceted GaN films. These faceted GaN films on Si have high crystallinity, and their threading dislocation density is similar to that of GaN grown on sapphire. In addition, the final faceted GaN/Si structure has great light absorption and extraction characteristics, leading to improved performance for GaN-on-Si light energy conversion devices.

Light-emitting diodes - Their potential in biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Yeh, Naichia Gary; Wu, Chia-Hao [College of Applied Sciences, MingDao University, 369 Wen-Hua Road, Peetou, Changhua 52345 (China); Cheng, Ta Chih [Department of Tropical Agriculture and International Cooperation, National Pingtung University of Science and Technology, 1 Hseuh-Fu Rd., Nei-Pu Hsiang, Pingtung 91201 (China)

2010-10-15

The rapid development of high brightness light-emitting diodes (LEDs) makes feasible the use of LEDs, among other light sources (such as laser, intense pulse light and other incoherent light systems), for medical treatment and light therapy. This paper provides a general review on red, green, blue, ultraviolet LED applications in photo rejuvenation and medical treatments of a variety of physical abnormalities, as well as the relief of stress, circadian rhythm disorders, and seasonal affective disorder. The review, concentrated in the papers published after 1990, intends to show that LEDs are well qualified to succeed its more energy demanding counterparts in the named areas and beyond. (author)

Visible light emission from porous silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan; Lu, Weifang

2017-01-01

Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...

Optical design of adjustable light emitting diode for different lighting requirements

International Nuclear Information System (INIS)

Lu Jia-Ning; Yu Jie; Tong Yu-Zhen; Zhang Guo-Yi

2012-01-01

Light emitting diode (LED) sources have been widely used for illumination. Optical design, especially freedom compact lens design is necessary to make LED sources applied in lighting industry, such as large-range interior lighting and small-range condensed lighting. For different lighting requirements, the size of target planes should be variable. In our paper we provide a method to design freedom lens according to the energy conservation law and Snell law through establishing energy mapping between the luminous flux emitted by a Lambertian LED source and a certain area of the target plane. The algorithm of our design can easily change the radius of each circular target plane, which makes the size of the target plane adjustable. Ray-tracing software Tracepro is used to validate the illuminance maps and polar-distribution maps. We design lenses for different sizes of target planes to meet specific lighting requirements. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Note: A flexible light emitting diode-based broadband transient-absorption spectrometer

Science.gov (United States)

Gottlieb, Sean M.; Corley, Scott C.; Madsen, Dorte; Larsen, Delmar S.

2012-05-01

This Note presents a simple and flexible ns-to-ms transient absorption spectrometer based on pulsed light emitting diode (LED) technology that can be incorporated into existing ultrafast transient absorption spectrometers or operate as a stand-alone instrument with fixed-wavelength laser sources. The LED probe pulses from this instrument exhibit excellent stability (˜0.5%) and are capable of producing high signal-to-noise long-time (>100 ns) transient absorption signals either in a broadband multiplexed (spanning 250 nm) or in tunable narrowband (20 ns) operation. The utility of the instrument is demonstrated by measuring the photoinduced ns-to-ms photodynamics of the red/green absorbing fourth GMP phosphodiesterase/adenylyl cyclase/FhlA domain of the NpR6012 locus of the nitrogen-fixing cyanobacterium Nostoc punctiforme.

Quantum key distribution with an entangled light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Dzurnak, B.; Stevenson, R. M.; Nilsson, J.; Dynes, J. F.; Yuan, Z. L.; Skiba-Szymanska, J.; Shields, A. J. [Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

2015-12-28

Measurements performed on entangled photon pairs shared between two parties can allow unique quantum cryptographic keys to be formed, creating secure links between users. An advantage of using such entangled photon links is that they can be adapted to propagate entanglement to end users of quantum networks with only untrusted nodes. However, demonstrations of quantum key distribution with entangled photons have so far relied on sources optically excited with lasers. Here, we realize a quantum cryptography system based on an electrically driven entangled-light-emitting diode. Measurement bases are passively chosen and we show formation of an error-free quantum key. Our measurements also simultaneously reveal Bell's parameter for the detected light, which exceeds the threshold for quantum entanglement.

High tunability and superluminescence in InAs mid-infrared light emitting diodes

International Nuclear Information System (INIS)

Sherstnev, V.V.; Krier, A.; Hill, G.

2002-01-01

We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

Characteristics of GaN-based 500 nm light-emitting diodes with embedded hemispherical air-cavity structure

Science.gov (United States)

Zhang, Minyan; Li, Yufeng; Li, Qiang; Su, Xilin; Wang, Shuai; Feng, Lungang; Tian, Zhenhuan; Guo, Maofeng; Zhang, Guowei; Ding, Wen; Yun, Feng

2018-03-01

GaN-based 500 nm light-emitting diodes (LEDs) with an air-cavity formed on a laser-drilled hemispherical patterned sapphire substrate (HPSS) were investigated. The cross-section transmission electron microscopy image of the HPSS-LED epilayer indicated that most of the threading dislocations were bent towards the lateral directions. It was found that in InGaN/GaN multiple quantum wells (MQWs) of HPSS-LEDs, there were fewer V-pits and lower surface roughness than those of conventional LEDs which were grown on flat sapphire substrates (FSSs). The high-resolution x-ray diffraction showed that the LED grown on a HPSS has better crystal quality than that grown on a FSS. Compared to FSS-LEDs, the photoluminescence (PL) intensity, the light output power, and the external quantum efficiency at an injected current of 20 mA for the HPSS-LED were enhanced by 81%, 65%, and 62%, respectively, such enhancements can be attributed to better GaN epitaxial quality and higher light extraction. The slightly peak wavelength blueshift of electroluminescence for the HPSS-LED indicated that the quantum confined Stark effect in the InGaN/GaN MQWs has been reduced. Furthermore, it was found that the far-field radiation patterns of the HPSS-LED have smaller view angles than that of the FSS-LED. In addition, the scanning near field optical microscope results revealed that the area above the air-cavity has a larger PL intensity than that without an air-cavity, and the closer to the middle of the air-cavity the stronger the PL intensity. These nano-light distribution findings were in good agreement with the simulation results obtained by the finite difference time domain method.

Al x Ga1‑ x N-based semipolar deep ultraviolet light-emitting diodes

Science.gov (United States)

Akaike, Ryota; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

2018-06-01

Deep ultraviolet (UV) emission from Al x Ga1‑ x N-based light-emitting diodes (LEDs) fabricated on semipolar (1\\bar{1}02) (r-plane) AlN substrates is presented. The growth conditions are optimized. A high NH3 flow rate during metalorganic vapor phase epitaxy yields atomically flat Al y Ga1‑ y N (y > x) on which Al x Ga1‑ x N/Al y Ga1‑ y N multiple quantum wells with abrupt interfaces and good periodicity are fabricated. The fabricated r-Al x Ga1‑ x N-based LED emits at 270 nm, which is in the germicidal wavelength range. Additionally, the emission line width is narrow, and the peak wavelength is stable against the injection current, so the semipolar LED shows promise as a UV emitter.

Epitaxial Sb-doped SnO_2 and Sn-doped In_2O_3 transparent conducting oxide contacts on GaN-based light emitting diodes

International Nuclear Information System (INIS)

Tsai, Min-Ying; Bierwagen, Oliver; Speck, James S.

2016-01-01

We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO_2 (ATO) and (111)-oriented, cubic Sn-doped In_2O_3 (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO_D_o_m_a_i_n_1[‐ 211]|| ITO_D_o_m_a_i_n_2[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10"− "3 Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga_2O_3 interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10"−"4 Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO_2:Sb (ATO) and In_2O_3:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short wavelengths than ITO.

Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

DEFF Research Database (Denmark)

Mesta, Murat; Carvelli, Marco; de Vries, Rein J

2013-01-01

we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...

Color-converted remote phosphor prototype of a multiwavelength excitable borosilicate glass for white light-emitting diodes

International Nuclear Information System (INIS)

Tian Hua; Qiu Kun; Song Jun; Wang Da-Jian; Liu Ji-Wen

2012-01-01

We report a unique red light-emitting Eu-doped borosilicate glass to convert color for warm white light-emitting diodes. This glass can be excited from 394 nm-peaked near ultraviolet light, 466 nm-peaked blue light, to 534 nm-peaked green light to emit the desired red light with an excellent transmission in the wavelength range of 400–700 nm which makes this glass suitable for color conversion without a great cost of luminous power loss. In particular, when assembling this glass for commercial white light-emitting diodes, the tested results show that the color rendering index is improved to 84 with a loss of luminous power by 12 percent at average, making this variety of glass promising for inorganic “remote-phosphor” color conversion

High-efficiency pyrene-based blue light emitting diodes: Aggregation suppression using a calixarene 3D-scaffold

KAUST Repository

Chan, Khaileok

2012-01-01

An efficient blue light emitting diode based on solution processable pyrene-1,3-alt-calix[4]arene is demonstrated, providing a record current efficiency of 10.5 cd A -1 in a simple non-doped OLED configuration. Complete suppression of pyrene aggregation in the solid state is achieved by controlling chromophore dispersion using the 1,3-alt-calix[4]arene scaffold. © 2012 The Royal Society of Chemistry.

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

International Nuclear Information System (INIS)

Xu, Bing; Zhao, Jun Liang; Dai, Hai Tao; Wang, Shu Guo; Lin, Ray-Ming; Chu, Fu-Chuan; Huang, Chou-Hsiung; Yu, Sheng-Fu; Sun, Xiao Wei

2014-01-01

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Xu, Bing; Zhao, Jun Liang [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Dai, Hai Tao, E-mail: htdai@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Wang, Shu Guo [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Lin, Ray-Ming, E-mail: rmlin@mail.cgu.edu.tw [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Chu, Fu-Chuan; Huang, Chou-Hsiung [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Yu, Sheng-Fu [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Sun, Xiao Wei, E-mail: xwsun@sustc.edu.cn [South University of Science and Technology of China, Shenzhen, Guangdong (China)

2014-01-31

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment.

Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes

Science.gov (United States)

Rashidi, A.; Nami, M.; Monavarian, M.; Aragon, A.; DaVico, K.; Ayoub, F.; Mishkat-Ul-Masabih, S.; Rishinaramangalam, A.; Feezell, D.

2017-07-01

This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication.

Compact light-emitting diode lighting ring for video-assisted thoracic surgery.

Science.gov (United States)

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-01-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

Compact light-emitting diode lighting ring for video-assisted thoracic surgery

Science.gov (United States)

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-10-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

International Nuclear Information System (INIS)

Zhen, Aigong; Ma, Ping; Zhang, Yonghui; Guo, Enqing; Tian, Yingdong; Liu, Boting; Guo, Shikuan; Shan, Liang; Wang, Junxi; Li, Jinmin

2014-01-01

In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal could improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically

Efficient light harvesting from flexible perovskite solar cells under indoor white light-emitting diode illumination

NARCIS (Netherlands)

Lucarelli, G.; Di Giacomo, F.; Zardetto, V.; Creatore, M.; Brown, T.M.

2017-01-01

This is the first report of an investigation on flexible perovskite solar cells for artificial light harvesting by using a white light-emitting diode (LED) lamp as a light source at 200 and 400 lx, values typically found in indoor environments. Flexible cells were developed using either

Atom probe tomography of a commercial light emitting diode

International Nuclear Information System (INIS)

Larson, D J; Prosa, T J; Olson, D; Lawrence, D; Clifton, P H; Kelly, T F; Lefebvre, W

2013-01-01

The atomic-scale analysis of a commercial light emitting diode device purchased at retail is demonstrated using a local electrode atom probe. Some of the features are correlated with transmission electron microscopy imaging. Subtle details of the structure that are revealed have potential significance for the design and performance of this device

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

Science.gov (United States)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5�

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

Science.gov (United States)

Kim, Sungjoon; Cho, Seongjae; Jeong, Jaedeok; Kim, Sungjun; Hwang, Sungmin; Kim, Garam; Yoon, Sukho; Park, Byung-Gook

2017-03-20

The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm2. Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

Degradation of phosphorescent blue organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Steinbacher, Frank [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

2009-07-01

Development of phosphorescent materials has significantly improved the efficiency of organic light-emitting diodes (OLEDs). By using efficient red, green and blue phosphorescent emitter materials high efficient white OLEDs can be achieved. However, due to low stability of blue phosphorescent materials the lifetime of phosphorescent white OLEDs remains an issue. As a result, degradation of blue phosphorescent materials needs to be further investigated and improved. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated. For investigation of degradation process the devices were stressed with electrical current and UV-light to study the impact of charge carriers as well as excitons and exciton-polaron quenching on the stability of the blue dye.

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

International Nuclear Information System (INIS)

Huang, H.W.; Lin, C.H.; Huang, J.K.; Lee, K.Y.; Lin, C.F.; Yu, C.C.; Tsai, J.Y.; Hsueh, R.; Kuo, H.C.; Wang, S.C.

2009-01-01

In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20 mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

International Nuclear Information System (INIS)

Fei-Peng, Chen; Bin, Xu; Wen-Jing, Tian; Zu-Jin, Zhao; Ping, Lü; Chan, Im

2010-01-01

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer (Cz6F) doped into polyvinyl carbazole (PVK) as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK:Cz6F blends are studied. Single and double layer devices are fabricated by using PVK: Cz6F blends, and the device with the configuration of indium tin oxide (ITO)/PVK:Cz6F/tris(8-hydroxyquinolinate)aluminium (Alq 3 )/LiF/A1 exhibits white light emission with Commission Internationale de l'Éclairage chromaticity coordinates of (0.30, 0.33) and a brightness of 402 cd/m 2 . The investigation reveals that the white light is composed of a blue–green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK:Cz6F blend films

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

Science.gov (United States)

Chen, Fei-Peng; Xu, Bin; Zhao, Zu-Jin; Tian, Wen-Jing; Lü, Ping; Im, Chan

2010-03-01

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer (Cz6F) doped into polyvinyl carbazole (PVK) as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK:Cz6F blends are studied. Single and double layer devices are fabricated by using PVK: Cz6F blends, and the device with the configuration of indium tin oxide (ITO)/PVK:Cz6F/tris(8-hydroxyquinolinate)aluminium (Alq3)/LiF/A1 exhibits white light emission with Commission Internationale de l'Éclairage chromaticity coordinates of (0.30, 0.33) and a brightness of 402 cd/m2. The investigation reveals that the white light is composed of a blue-green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK:Cz6F blend films.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn; Liu, Bin; Wang, Lianhui [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Shi, Hongying [Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China); Huang, Wei, E-mail: iamdirector@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

2015-02-28

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Application of Surface Plasmonics for Semiconductor Light-Emitting Diodes

DEFF Research Database (Denmark)

Fadil, Ahmed

This thesis addresses the lack of an efficient semiconductor light source at green emission colours. Considering InGaN based quantum-well (QW) light-emitters and light-emitting diodes (LEDs), various ways of applying surface plasmonics and nano-patterning to improve the efficiency, are investigated....... By placing metallic thin films or nanoparticles (NPs) in the near-field of QW light-emitters, it is possible to improve their internal quantum efficiency (IQE) through the Purcell enhancement effect. It has been a general understanding that in order to achieve surface plasmon (SP) coupling with QWs......-QW coupling does not necessarily lead to emission enhancement. The findings of this work show that the scattering and absorption properties of NPs play a crucial role in determining whether the implementation will improve or degrade the optical performance. By applying these principles, a novel design...

Investigation of organic light emitting diodes for interferometric purposes

Science.gov (United States)

Pakula, Anna; Zimak, Marzena; Sałbut, Leszek

2011-05-01

Recently the new type of light source has been introduced to the market. Organic light emitting diode (OLED) is not only interesting because of the low applying voltage, wide light emitting areas and emission efficiency. It gives the possibility to create a light source of a various shape, various color and in the near future very likely even the one that will change shape and spectrum in time in controlled way. Those opportunities have not been in our reach until now. In the paper authors try to give an answer to the question if the new light source -OLED - is suitable for interferometric purposes. Tests cover the short and long term spectrum stability, spectrum changes due to the emission area selection. In the paper the results of two OLEDs (red and white) are shown together with the result of an attempt to use them in an interferometric setup.

Highly efficient white top-emitting organic light-emitting diodes with forward directed light emission

Energy Technology Data Exchange (ETDEWEB)

Freitag, Patricia; Reineke, Sebastian; Furno, Mauro; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

2010-07-01

The demand for highly efficient and energy saving illumination has increased considerably during the last decades. Organic light emitting diodes (OLEDs) are promising candidates for future lighting technologies. They offer high efficiency along with excellent color quality, allowing substantially lower power consumption than traditional illuminants. Recently, especially top-emitting devices have attracted high interest due to their compatibility with opaque substrates like metal sheets. In this contribution, we demonstrate top-emitting OLEDs with white emission spectra employing a multilayer hybrid cavity structure with two highly efficient phosphorescent emitter materials for orange-red (Ir(MDQ)2(acac)) and green (Ir(ppy)3) emission as well as the stable fluorescent blue emitter TBPe. To improve the OLED performance and modify the color quality, two different electron blocking layers and anode material combinations are tested. Compared to Lambertian emission, our devices show considerably enhanced forward emission, which is preferred for most lighting applications. Besides broadband emission and angle independent emission maxima, power efficiencies of 13.3 lm/W at 3 V and external quantum efficiencies of 5.3% are achieved. The emission shows excellent CIE coordinates of (0.420,0.407) at approx. 1000 cd/m{sup 2} and color rendering indices up to 77.

Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

Science.gov (United States)

Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

2016-06-22

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes

Science.gov (United States)

Masui, Hisashi; Fellows, Natalie N.; Sato, Hitoshi; Asamizu, Hirokuni; Nakamura, Shuji; Denbaars, Steven P.

2007-08-01

A metal layer formed on the backside of InGaN/sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere/air interface.

Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

Science.gov (United States)

Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

2012-09-01

We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

Effects of current crowding on light extraction efficiency of conventional GaN-based light-emitting diodes.

Science.gov (United States)

Cao, Bin; Li, Shuiming; Hu, Run; Zhou, Shengjun; Sun, Yi; Gan, Zhiying; Liu, Sheng

2013-10-21

Current crowding effects (CCEs) on light extraction efficiency (LEE) of conventional GaN-based light-emitting diodes (LEDs) are analyzed through Monte Carlo ray-tracing simulation. The non-uniform radiative power distribution of the active layer of the Monte Carlo model is obtained based on the current spreading theory and rate equation. The simulation results illustrate that CCE around n-pad (n-CCE) has little effect on LEE, while CCE around p-pad (p-CCE) results in a notable LEE droop due to the significant absorption of photons emitted under p-pad. LEE droop is alleviated by a SiO₂ current blocking layer (CBL) and reflective p-pad. Compared to the conventional LEDs without CBL, the simulated LEE of LEDs with CBL at 20 A/cm² and 70 A/cm² is enhanced by 7.7% and 19.0%, respectively. It is further enhanced by 7.6% and 11.4% after employing a reflective p-pad due to decreased absorption. These enhancements are in accordance with the experimental results. Output power of LEDs with CBL is enhanced by 8.7% and 18.2% at 20 A/cm² and 70 A/cm², respectively. And the reflective p-pad results in a further enhancement of 8.9% and 12.7%.

Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

International Nuclear Information System (INIS)

Cho, Joong-yeon; Park, Sang-Jun; Ahn, Jinho; Lee, Heon

2014-01-01

In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%

Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Cho, Joong-yeon; Park, Sang-Jun [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Material Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2014-11-03

In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%.

Light emitting diodes (LED): applications in forest and native plant nurseries

Science.gov (United States)

Thomas D. Landis; Jeremiah R. Pinto; R. Kasten Dumroese

2013-01-01

It was quotes like this that made us want to learn more about light emitting diodes (LED). Other than knowing that LEDs were the latest innovation in artificial lighting, we knew that we had a lot to learn. So we started by reviewing some of the basics. The following review is a brief synopsis of how light affects plants and some discussion about LED lighting. If you...

High-quality GaN epitaxially grown on Si substrate with serpentine channels

Science.gov (United States)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

Science.gov (United States)

Chen, Chun-Yen; Chen, Wei-Cheng; Chang, Ching-Hong; Lee, Yu-Lin; Liu, Wen-Chau

2018-05-01

Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15-90°) and convex or concave sidewalls prepared using an inductively-coupled-plasma approach are comprehensively fabricated and studied. The device with 45° sidewalls (Device F) and that with convex sidewalls (Device B) show significant improvements in optical properties. Experiments show that, at an injection current of 350 mA, the light output power, external quantum efficiency, wall-plug efficiency, and luminous flux of Device F (Device B) are greatly improved by 18.3% (18.2%), 18.2% (18.2%), 17.3% (19.8%), and 16.6% (18.4%), respectively, compared to those of a conventional LED with flat sidewalls. In addition, negligible degradation in electrical properties is found. The enhanced optical performance is mainly attributed to increased light extraction in the horizontal direction due to a significant reduction in total internal reflection at the textured sidewalls. Therefore, the reported specific textured-sidewall structures (Devices B and F) are promising for high-power GaN-based LED applications.

Enhanced Performance of Bipolar Cascade Light Emitting Diodes by Doping the Aluminum Oxide Apertures

National Research Council Canada - National Science Library

Siskaninetz, William

2004-01-01

Performance improvements in multiple-stage, single-cavity bipolar cascade light emitting diodes including reduced operating voltages, enhanced light generation, and reduced device heating are obtained...

Hybrid daylight/light-emitting diode illumination system for indoor lighting.

Science.gov (United States)

Ge, Aiming; Qiu, Peng; Cai, Jinlin; Wang, Wei; Wang, Junwei

2014-03-20

A hybrid illumination method using both daylight and light-emitting diodes (LEDs) for indoor lighting is presented in this study. The daylight can be introduced into the indoor space by a panel-integration system. The daylight part and LEDs are combined within a specific luminaire that can provide uniform illumination. The LEDs can be turned on and dimmed through closed-loop control when the daylight illuminance is inadequate. We simulated the illumination and calculated the indoor lighting efficiency of our hybrid daylight and LED lighting system, and compared this with that of LED and fluorescent lighting systems. Simulation results show that the efficiency of the hybrid daylight/LED illumination method is better than that of LED and traditional lighting systems, under the same lighting conditions and lighting time; the method has hybrid lighting average energy savings of T5 66.28%, and that of the LEDs is 41.62%.

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

Science.gov (United States)

Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

2017-07-01

High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

Polymer Light-Emitting Diode Prepared by Floating-Off Film-Transfer Technique

KAUST Repository

Park, Jihoon; Kim, Eugene

2015-01-01

© 2015 Copyright Taylor & Francis Group, LLC. Floating-off film-transfer technique was used for the formation of semiconducting polymer multi-layers and the effect on the performance of polymer light-emitting diode (PLED) was studied. This method

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

Science.gov (United States)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

Directory of Open Access Journals (Sweden)

Abdul Halim N. Syafira

2017-01-01

Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

Science.gov (United States)

Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

2012-06-01

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

Warm-White-Light-Emitting Diode Based on a Dye-Loaded Metal-Organic Framework for Fast White-Light Communication.

Science.gov (United States)

Wang, Zhiye; Wang, Zi; Lin, Bangjiang; Hu, XueFu; Wei, YunFeng; Zhang, Cankun; An, Bing; Wang, Cheng; Lin, Wenbin

2017-10-11

A dye@metal-organic framework (MOF) hybrid was used as a fluorophore in a white-light-emitting diode (WLED) for fast visible-light communication (VLC). The white light was generated from a combination of blue emission of the 9,10-dibenzoate anthracene (DBA) linkers and yellow emission of the encapsulated Rhodamine B molecules. The MOF structure not only prevents dye molecules from aggregation-induced quenching but also efficiently transfers energy to the dye for dual emission. This light-emitting material shows emission lifetimes of 1.8 and 5.3 ns for the blue and yellow components, respectively, which are significantly shorter than the 200 ns lifetime of Y 3 Al 5 O 12 :Ce 3+ in commercial WLEDs. The MOF-WLED device exhibited a modulating frequency of 3.6 MHz for VLC, six times that of commercial WLEDs.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

Science.gov (United States)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

Tunable blue organic light emitting diode based on aluminum calixarene supramolecular complex

Science.gov (United States)

Legnani, C.; Reyes, R.; Cremona, M.; Bagatin, I. A.; Toma, H. E.

2004-07-01

In this letter, the results of supramolecular organic light emitting diodes using a calix[4] arene complex thin film as emitter and electron transporting layer are presented. The devices were grown onto glass substrates coated with indium-tin-oxide layer and aluminum thick (150nm) cathode. By applying a dc voltage between the device electrodes in forward bias condition, a blue light emission in the active area of the device was observed. It was found that the electroluminescent emission peak can be tuned between 470 and 510nm changing the applied voltage bias from 4.3 to 5.4V. The observed tunable emission can be associated with an energy transfer from the calixarene compound.

Phosphorescence white organic light-emitting diodes with single emitting layer based on isoquinolinefluorene-carbazole containing host.

Science.gov (United States)

Koo, Ja Ryong; Lee, Seok Jae; Hyung, Gun Woo; Kim, Bo Young; Shin, Hyun Su; Lee, Kum Hee; Yoon, Seung Soo; Kim, Woo Young; Kim, Young Kwan

2013-03-01

We have demonstrated a stable phosphorescent white organic light-emitting diodes (WOLEDs) using an orange emitter, Bis(5-benzoyl-2-(4-fluorophenyl)pyridinato-C,N) iridium(III)acetylacetonate [(Bz4Fppy)2Ir(III)acac] doped into a newly synthesized blue host material, 2-(carbazol-9-yl)-7-(isoquinolin-1-yl)-9,9-diethylfluorene (CzFliq). When 1 wt.% (Bz4Fppy)2Ir(III)acac was doped into emitting layer, it was realized an improved EL performance and a pure white color in the OLED. The optimum WOLED showed maximum values as a luminous efficiency of 10.14 cd/A, a power efficiency of 10.24 Im/W, a peak external quantum efficiency 4.07%, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39) at 8 V.

Highly efficient red phosphorescent organic light-emitting diodes based on solution processed emissive layer

International Nuclear Information System (INIS)

Liu, Baiquan; Xu, Miao; Tao, Hong; Ying, Lei; Zou, Jianhua; Wu, Hongbin; Peng, Junbiao

2013-01-01

Highly efficient red phosphorescent organic polymer light-emitting diodes (PhOLEDs) were fabricated based on a solution-processed small-molecule host 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) by doping an iridium complex, tris(1-(2,6-dimethylphenoxy)-4-(4-chlorophenyl)phthalazine)iridium (III) (Ir(MPCPPZ) 3 ). A hole blocking layer 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBI) with a function of electron transport was thermally deposited onto the top of CBP layer. The diode with the structure of ITO/PEDOT:PSS (50 nm)/CBP:Ir(MPCPPZ) 3 (55 nm)/TPBI (30 nm)/Ba (4 nm)/Al (120 nm) showed an external quantum efficiency (QE ext ) of 19.3% and luminous efficiency (LE) of 18.3 cd/A at a current density of 0.16 mA/cm 2 , and Commission International de I'Eclairage (CIE) coordinates of (0.607, 0.375). It was suggested that the diodes using TPBI layer exhibited nearly 100% internal quantum efficiency and one order magnitude enhanced LE or QE ext efficiencies. -- Highlights: • Efficient red PhOLEDs based on a solution-processed small-molecule host were fabricated. • By altering volume ratio of chloroform/chlorobenzene solvent, we got best film quality of CBP. • EQE of the diode was 19.3%, indicating nearly 100% internal quantum yield was achieved

Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

Directory of Open Access Journals (Sweden)

Zhi Li

2013-04-01

Full Text Available Incorporating Ag nanowires with graphene resulted in improved electrical conductivity and enhanced contact properties between graphene and p-GaN. The graphene/AgNWs hybrid films exhibited high transmittance and lower sheet resistance compared to bare graphene. The specific contact resistance between graphene and p-GaN reduced nearly an order of magnitude with the introduction of AgNWs. As a result, light emitting diodes based on the hybrid films showed 44% lower forward voltage and 2-fold higher light output power. The enhanced performance was attributed to the bridging by AgNWs of cracks, grain boundaries in graphene and the reduction of Schottky barrier height at graphene/ p-GaN interface.

Emergence of White Organic Light-Emitting Diodes Based on Thermally Activated Delayed Fluorescence

Directory of Open Access Journals (Sweden)

Peng Xiao

2018-02-01

Full Text Available Recently, thermally activated delayed fluorescence (TADF organic light-emitting diodes (OLEDs have attracted both academic and industrial interest due to their extraordinary characteristics, such as high efficiency, low driving voltage, bright luminance, lower power consumption and potentially long lifetime. In this invited review, the fundamental concepts of TADF have been firstly introduced. Then, main approaches to realize WOLEDs based on TADF have been summarized. More specifically, the recent development of WOLEDs based on all TADF emitters, WOLEDs based on TADF and conventional fluorescence emitters, hybrid WOLEDs based on blue TADF and phosphorescence emitters and WOLEDs based on TADF exciplex host and phosphorescence dopants is highlighted. In particular, design strategies, device structures, working mechanisms and electroluminescent processes of the representative WOLEDs based on TADF are reviewed. Finally, challenges and opportunities for further enhancement of the performance of WOLEDs based on TADF are presented.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

2015-01-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang

2015-03-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

An Exciplex Host for Deep-Blue Phosphorescent Organic Light-Emitting Diodes.

Science.gov (United States)

Lim, Hyoungcheol; Shin, Hyun; Kim, Kwon-Hyeon; Yoo, Seung-Jun; Huh, Jin-Suk; Kim, Jang-Joo

2017-11-01

The use of exciplex hosts is attractive for high-performance phosphorescent organic light-emitting diodes (PhOLEDs) and thermally activated delayed fluorescence OLEDs, which have high external quantum efficiency, low driving voltage, and low efficiency roll-off. However, exciplex hosts for deep-blue OLEDs have not yet been reported because of the difficulties in identifying suitable molecules. Here, we report a deep-blue-emitting exciplex system with an exciplex energy of 3.0 eV. It is composed of a carbazole-based hole-transporting material (mCP) and a phosphine-oxide-based electron-transporting material (BM-A10). The blue PhOLEDs exhibited maximum external quantum efficiency of 24% with CIE coordinates of (0.15, 0.21) and longer lifetime than the single host devices.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

Science.gov (United States)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-01

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates.

Science.gov (United States)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-02

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A. [Novosibirsk State Technical University (Russian Federation); Shamirzaev, T. S. [Russian Academy of Science, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)

2016-11-15

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.

High efficient white organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany)

2007-07-01

Due to the rapid progress in the last years the performance of organic light emitting diodes (OLEDs) has reached a level where general lighting presents a most interesting application target. We demonstrate, how the color coordinates of the emission spectrum can be adjusted using a combinatorial evaporation tool to lie on the desired black body curve representing cold and warm white, respectively. The evaluation includes phosphorescent and fluorescent dye approaches to optimize lifetime and efficiency, simultaneously. Detailed results are presented with respect to variation of layer thicknesses and dopant concentrations of each layer within the OLED stack. The most promising approach contains phosphorescent red and green dyes combined with a fluorescent blue one as blue phosphorescent dopants are not yet stable enough to achieve long lifetimes.

New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

Directory of Open Access Journals (Sweden)

Andre F. S. Guedes

2014-06-01

Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

Science.gov (United States)

Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

2018-01-25

Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

International Nuclear Information System (INIS)

Guan Yunxia; Niu Lianbin

2009-01-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq 3 /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

Low driving voltage blue, green, yellow, red and white organic light-emitting diodes with a simply double light-emitting structure.

Science.gov (United States)

Zhang, Zhensong; Yue, Shouzhen; Wu, Yukun; Yan, Pingrui; Wu, Qingyang; Qu, Dalong; Liu, Shiyong; Zhao, Yi

2014-01-27

Low driving voltage blue, green, yellow, red and white phosphorescent organic light-emitting diodes (OLEDs) with a common simply double emitting layer (D-EML) structure are investigated. Our OLEDs without any out-coupling schemes as well as n-doping strategies show low driving voltage, e.g. white OLED, respectively. This work demonstrates that the low driving voltages and high efficiencies can be simultaneously realized with a common simply D-EML structure.

Surface displacement imaging by interferometry with a light emitting diode

International Nuclear Information System (INIS)

Dilhaire, Stefan; Grauby, Stephane; Jorez, Sebastien; Lopez, Luis David Patino; Rampnoux, Jean-Michel; Claeys, Wilfrid

2002-01-01

We present an imaging technique to measure static surface displacements of electronic components. A device is supplied by a transient current that creates a variation of temperature, thus a surface displacement. To measure the latter, a setup that is based on a Michelson interferometer is used. To avoid the phenomenon of speckle and the drawbacks inherent to it, we use a light emitting diode as the light source for the interferometer. The detector is a visible CCD camera that analyzes the optical signal containing the information of surface displacement of the device. Combining images, we extract the amplitude of the surface displacement. Out-of-plane surface-displacement images of a thermoelectric device are presented

Inkjet printing the three organic functional layers of two-colored organic light emitting diodes

International Nuclear Information System (INIS)

Coenen, Michiel J.J.; Slaats, Thijs M.W.L.; Eggenhuisen, Tamara M.; Groen, Pim

2015-01-01

Inkjet printing allows for the roll-2-roll fabrication of organic electronic devices at an industrial scale. In this paper we demonstrate the fabrication of two-colored organic light emitting diodes (OLEDs) in which three adjacent organic device layers were inkjet printed from halogen free inks. The resulting devices demonstrate the possibilities offered by this technique for the fabrication of OLEDs for signage and personalized electronics. - Highlights: • Two-colored organic light emitting diodes with 3 inkjet printed device layers were fabricated. • All materials were printed from halogen free inks. • Inkjet printing of emissive materials is suitable for signage applications

White light-emitting diodes (LEDs) using (oxy)nitride phosphors

International Nuclear Information System (INIS)

Xie, R-J; Hirosaki, N; Sakuma, K; Kimura, N

2008-01-01

(Oxy)nitride phosphors have attracted great attention recently because they are promising luminescent materials for phosphor-converted white light-emitting diodes (LEDs). This paper reports the luminescent properties of (oxy)nitride phosphors in the system of M-Si-Al-O-N (M = Li, Ca or Sr), and optical properties of white LEDs using a GaN-based blue LED and (oxy)nitride phosphors. The phosphors show high conversion efficiency of blue light, suitable emission colours and small thermal quenching. The bichromatic white LEDs exhibit high luminous efficacy (∼55 lm W -1 ) and the multi-phosphor converted white LEDs show high colour rendering index (Ra 82-95). The results indicate that (oxy)nitride phosphors demonstrate their superior suitability to use as down-conversion luminescent materials in white LEDs

Luminescence and squeezing of a superconducting light-emitting diode

Science.gov (United States)

Hlobil, Patrik; Orth, Peter P.

2015-05-01

We investigate a semiconductor p -n junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a sharp frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence that results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. We show that the squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This reveals how the macroscopic coherence of a superconductor can be used to control the properties of light.

Organic light-emitting diodes with direct contact-printed red, green, blue, and white light-emitting layers

Science.gov (United States)

Chen, Sun-Zen; Peng, Shiang-Hau; Ting, Tzu-Yu; Wu, Po-Shien; Lin, Chun-Hao; Chang, Chin-Yeh; Shyue, Jing-Jong; Jou, Jwo-Huei

2012-10-01

We demonstrate the feasibility of using direct contact-printing in the fabrication of monochromatic and polychromatic organic light-emitting diodes (OLEDs). Bright devices with red, green, blue, and white contact-printed light-emitting layers with a respective maximum luminance of 29 000, 29 000, 4000, and 18 000 cd/m2 were obtained with sound film integrity by blending a polymeric host into a molecular host. For the red OLED as example, the maximum luminance was decreased from 29 000 to 5000 cd/m2 as only the polymeric host was used, or decreased to 7000 cd/m2 as only the molecular host was used. The markedly improved device performance achieved in the devices with blended hosts may be attributed to the employed polymeric host that contributed a good film-forming character, and the molecular host that contributed a good electroluminescence character.

Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication

KAUST Repository

Chi, Yu-Chieh; Hsieh, Dan-Hua; Lin, Chung-Yu; Chen, Hsiang-Yu; Huang, Chia-Yen; He, Jr-Hau; Ooi, Boon S.; DenBaars, Steven P.; Nakamura, Shuji; Kuo, Hao-Chung; Lin, Gong-Ru

2015-01-01

An advanced light-fidelity (Li-Fi) system based on the blue Gallium nitride (GaN) laser diode (LD) with a compact white-light phosphorous diffuser is demonstrated for fusing the indoor white-lighting and visible light communication (VLC

Effect of arylamine hole-transport units on the performance of blue polyspirobifulorene light-emitting diodes

NARCIS (Netherlands)

Abbaszadeh, D.; Nicolai, H.T.; Crəciun, N.I.; Blom, P.W.M.

2014-01-01

The operation of blue light-emitting diodes based on polyspirobifluorene with a varying number of N,N,N′,N′ tetraaryldiamino biphenyl (TAD) hole-transport units (HTUs) is investigated. Assuming that the electron transport is not affected by the incorporation of TAD units, model calculations predict

Salt-embedded carbon nanodots as a UV and thermal stable fluorophore for light-emitting diodes

International Nuclear Information System (INIS)

Kim, Tak H.; Wang, Fu; McCormick, Paul; Wang, Lianzhou; Brown, Chris; Li, Qin

2014-01-01

UV and thermal stable, photoluminescent carbon dots (CDs) prepared by embedding CDs in ionic salt crystals such as NaCl, KCl, KBr are demonstrated. The salt crystal embedding matrix does not interfere with CDs strong emission, and provides effective protection to CDs from the environment. The degradation of 20% of the initial luminescence intensity of salt-encapsulated CDs (S-CDs) is 15 times slower under UV and 6 times slower under heat compared to that of CDs in silica matrix. We also demonstrate that the S-CDs can be applied as a color-converting phosphor for typical GaN UV light emitting diodes (LEDs) with significant improvements in stability as well as processability. - Highlights: • Carbon dots can be uniformly embedded in ionic salt crystals via crystallization. • Salt crystals provide oxygen-tight matrices for protecting carbon dots from degradations. • Salt-embedded carbon dots can be applied as a stable color-converting phosphor in LEDs

Salt-embedded carbon nanodots as a UV and thermal stable fluorophore for light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Tak H. [Queensland Micro- and Nano-Technology Centre, Griffith University, Nathan, QLD 4111 (Australia); Environmental Engineering, Griffith University, QLD 4111 (Australia); Wang, Fu [Institute of Physiology, University of Freiburg, Hermann-Herder-Street 7, 79104 Freiburg (Germany); McCormick, Paul [School of Mechanical and Chemical Engineering, The University of Western Australia, WA 2009 (Australia); Wang, Lianzhou [School of Chemical Engineering, The University of Queensland, QLD 4072 (Australia); Brown, Chris [Queensland Micro- and Nano-Technology Centre, Griffith University, Nathan, QLD 4111 (Australia); Li, Qin, E-mail: qin.li@griffith.edu.au [Queensland Micro- and Nano-Technology Centre, Griffith University, Nathan, QLD 4111 (Australia); Environmental Engineering, Griffith University, QLD 4111 (Australia)

2014-10-15

UV and thermal stable, photoluminescent carbon dots (CDs) prepared by embedding CDs in ionic salt crystals such as NaCl, KCl, KBr are demonstrated. The salt crystal embedding matrix does not interfere with CDs strong emission, and provides effective protection to CDs from the environment. The degradation of 20% of the initial luminescence intensity of salt-encapsulated CDs (S-CDs) is 15 times slower under UV and 6 times slower under heat compared to that of CDs in silica matrix. We also demonstrate that the S-CDs can be applied as a color-converting phosphor for typical GaN UV light emitting diodes (LEDs) with significant improvements in stability as well as processability. - Highlights: • Carbon dots can be uniformly embedded in ionic salt crystals via crystallization. • Salt crystals provide oxygen-tight matrices for protecting carbon dots from degradations. • Salt-embedded carbon dots can be applied as a stable color-converting phosphor in LEDs.

Origin of colour stability in blue/orange/blue stacked phosphorescent white organic light-emitting diodes

International Nuclear Information System (INIS)

Kim, Sung Hyun; Jang, Jyongsik; Yook, Kyoung Soo; Lee, Jun Yeob

2009-01-01

The origin of colour stability in phosphorescent white organic light-emitting diodes (PHWOLEDs) with a blue/orange/blue stacked emitting structure was studied by monitoring the change in a recombination zone. A balanced recombination zone shift between the blue and the orange light-emitting layers was found to be responsible for the colour stability in the blue/orange/blue stacked PHWOLEDs.

Microcontact printing of self-assembled monolayers to pattern the light-emission of polymeric light-emitting diodes

NARCIS (Netherlands)

Brondijk, J. J.; Li, X.; Akkerman, H. B.; Blom, P. W. M.; de Boer, B.

By patterning a self-assembled monolayer (SAM) of thiolated molecules with opposing dipole moments on a gold anode of a polymer light-emitting diode (PLED), the charge injection and, therefore, the light-emission of the device can be controlled with a micrometer-scale resolution. Gold surfaces were

Surface plasmon enhanced organic light emitting diodes by gold nanoparticles with different sizes

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-11-30

Highlights: • Different varieties, sizes, and shapes for nanoparticles will generate different surface plasmon resonance effects in the devices. • The red-shift phenomenon for absorption peaks is because of an increasing contribution of higher-order plasmon modes for the larger gold nanoparticles. • The mobility of electrons in the electron-transport layer of organic light-emitting diodes is a few orders of magnitude lower than that of holes in the hole-transport layer of organic light-emitting diodes. - Abstract: The influence of gold nanoparticles (GNPs) with different sizes doped into (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) (PEDOT:PSS) on the performance of organic light-emitting diodes is investigated in this study. The current efficiency of the device, at a current density of 145 mA/cm, with PEDOT:PSS doped with GNPs of 8 nm is about 1.57 times higher than that of the device with prime PEDOT:PSS because the absorption peak of GNPs is closest to the photoluminescence peak of the emission layer, resulting in maximum surface plasmon resonance effect in the device. In addition, the surface-enhanced Raman scattering spectroscopy also reveals the maximum surface plasmon resonance effect in the device when the mean particle size of GNPs is 8 nm.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

Science.gov (United States)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.

2017-11-27

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-01-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION

Directory of Open Access Journals (Sweden)

Dhiyauddin Ahmad Fauzi

2017-05-01

Full Text Available In addition to their useful optoelectronics functions, gallium nitride (GaN and quantum dots (QDs based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED and InAs/GaAs dot-in-a well (DWELL samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V and capacitance-voltage (C-V electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.

Highly efficient and simplified phosphorescence white organic light-emitting diodes based on synthesized deep-blue host and orange emitter

Energy Technology Data Exchange (ETDEWEB)

Koo, Ja Ryong; Lee, Seok Jae; Hyung, Gun Woo; Kim, Bo Young; Lee, Dong Hyung [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Kim, Woo Young [Department of Green Energy and Semiconductor Engineering, Hoseo University, Asan 336-795 (Korea, Republic of); Lee, Kum Hee [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of)

2013-10-01

The authors have demonstrated a highly efficient and stable phosphorescent white organic light-emitting diode (WOLED), which has been achieved by doping only one orange phosphorescent emitter, Bis(5-benzoyl-2-(4-fluorophenyl)pyridinato-C,N)iridium(III) acetylacetonate into an appropriate deep blue phosphorescent host, 4,4'-bis(4-(triphenylsilyl)phenyl)-1,1'-binaphthyl as an emitting layer (EML). The WOLED has been achieved by effective confinement of triplet excitons to emit a warm white color. The optimized WOLED, with a simple structure as a hole transporting layer-EML-electron transporting layer, showed a maximum luminous efficiency of 22.38 cd/A, a maximum power efficiency of 12.01 lm/W, a maximum external quantum efficiency of 7.32%, and CIEx,y coordinates of (0.38,0.42) at 500 cd/m{sup 2}, respectively. - Highlights: • Highly efficient phosphorescent white organic light-emitting diode (WOLED) • Single emitting layer consists of synthesized deep blue host and orange emitter • The WOLED with high EL efficiencies due to efficient triplet exciton confinement.

Optimization of emission color and efficiency of organic light emitting diodes for lighting applications

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany)

2008-07-01

In recent years the performance of organic light emitting diodes (OLEDs) has reached a level where OLED lighting presents an interesting application target. Research activities therefore focus amongst other things on the development of high efficient and stable white light emitting devices. We demonstrate how the color coordinates can be adjusted to achieve a warm white emission spectrum, whereas the OLED stack contains phosphorescent red and green dyes combined with a fluorescent blue one. Detailed results are presented with respect to a variation of layer thicknesses and dopant concentrations of the emission layers. Furthermore the influence of various dye molecules and hence different energy level alignments between host and dopants on color and efficiency will be discussed.

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

Energy Technology Data Exchange (ETDEWEB)

Guan Yunxia; Niu Lianbin [Key Laboratory of Optical Engineering, College of Physics and Information Technology, Chongqing Normal University, Chongqing 400047 (China)], E-mail: gyxybsy@126.com, E-mail: niulb03@126.com

2009-03-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq{sub 3} /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting diodes

Directory of Open Access Journals (Sweden)

M. H. Doan

2012-06-01

Full Text Available The influences of the laser lift-off (LLO process on the InGaN/GaN blue light emitting diode (LED structures, grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition, have been comprehensively investigated. The vertical LED structures on Cu carriers are fabricated using electroplating, LLO, and inductively coupled plasma etching processes sequentially. A detailed study is performed on the variation of defect concentration and optical properties, before and after the LLO process, employing high-resolution transmission electron microscopy (HRTEM, scanning electron microscopy (SEM observations, cathodoluminescence (CL, photoluminescence (PL, and high-resolution X-ray diffraction (HRXRD measurements. The SEM observations on the distribution of dislocations after the LLO show well that even the GaN layer near to the multiple quantum wells (MQWs is damaged. The CL measurements reveal that the peak energy of the InGaN/GaN MQW emission exhibits a blue-shift after the LLO process in addition to a reduced intensity. These behaviors are attributed to a diffusion of indium through the defects created by the LLO and creation of non-radiative recombination centers. The observed phenomena thus suggest that the MQWs, the active region of the InGaN/GaN light emitting diodes, may be damaged by the LLO process when thickness of the GaN layer below the MQW is made to be 5 μm, a conventional thickness. The CL images on the boundary between the KrF irradiated and non-irradiated regions suggest that the propagation of the KrF laser beam and an accompanied recombination enhanced defect reaction, rather than the propagation of a thermal shock wave, are the main origin of the damage effects of the LLO process on the InGaN/GaN MQWs and the n-GaN layer as well.

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.

Science.gov (United States)

Jung, Byung Oh; Bae, Si-Young; Lee, Seunga; Kim, Sang Yun; Lee, Jeong Yong; Honda, Yoshio; Amano, Hiroshi

2016-12-01

We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

Epitaxial Sb-doped SnO{sub 2} and Sn-doped In{sub 2}O{sub 3} transparent conducting oxide contacts on GaN-based light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Tsai, Min-Ying [Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 (United States); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Materials Department, University of California, Santa Barbara, CA 93106 (United States); Paul-Drude-Insitut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Speck, James S. [Materials Department, University of California, Santa Barbara, CA 93106 (United States)

2016-04-30

We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO{sub 2} (ATO) and (111)-oriented, cubic Sn-doped In{sub 2}O{sub 3} (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO{sub Domain1}[‐ 211]|| ITO{sub Domain2}[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10{sup −} {sup 3} Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga{sub 2}O{sub 3} interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10{sup −4} Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO{sub 2}:Sb (ATO) and In{sub 2}O{sub 3}:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short

Origin of thermal degradation of Sr 2-xSi 5N 8 : Eu x phosphors in air for light-emitting diodes

NARCIS (Netherlands)

Yeh, C.W.; Chen, W.T.; Liu, R.S.; Hu, S.F.; Sheu, H.S.; Chen, J.M.; Hintzen, H.T.

2012-01-01

The orange-red emitting phosphors based on M 2Si 5N 8:Eu (M = Sr, Ba) are widely utilized in white light-emitting diodes (WLEDs) because of their improvement of the color rendering index (CRI), which is brilliant for warm white light emission. Nitride-based phosphors are adopted in high-performance

Optimization of light quality from color mixing light-emitting diode systems for general lighting

DEFF Research Database (Denmark)

Thorseth, Anders

2012-01-01

are simulated using radiometrically measured single LED spectra. The method uses electrical input powers as input parameters and optimizes the resulting spectral power distribution with regard to color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal......To address the problem of spectral light quality from color mixing light-emitting diode systems, a method for optimizing the spectral output of multicolor LED system with regards to standardized quality parameters has been developed. The composite spectral power distribution from the LEDs...

Improved efficiency of organic light-emitting diodes based on a europium complex by fluorescent dye

Energy Technology Data Exchange (ETDEWEB)

You Han [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Fang Junfeng [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Gao Jia [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Ma Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China)]. E-mail: mdg1014@ciac.jl.cn

2007-01-15

Improved efficiency of organic light-emitting diodes (OLEDs) based on europium complexes have been realized by using a fluorescent dye 4-(dicyanomethylene)-2-t-butyl-6 (1,1,7,7-tetramethyljulolidyl-9-enyl))-4H-pyran (DCJTB) doping .The luminous efficiency of the devices with a fluorescent dye in the emissive layer was found to improve two times of that in devices without fluorescent dye. The devices showed pure red light, which is the characteristic emission of trivalent europium ion with a full-width at half-maximum of 3 nm.The maximum brightness and luminous efficiency reached 1200 cd/m{sup 2} at 23 V and 7.3 cd/A (2.0 lm/w), respectively, at a current density of 0.35 mA/cm{sup 2}.

Printable candlelight-style organic light-emitting diode

Science.gov (United States)

Jou, J. H.; Singh, M.; Song, W. C.; Liu, S. H.

2017-06-01

Candles or oil lamps are currently the most friendly lighting source to human eyes, physiology, ecosystems, artifacts, environment, and night skies due to their blue light-less emission. Candle light also exhibits high light-quality that provides visual comfort. However, they are relatively low in power efficacy (0.3 lm/W), making them energy-wasting, besides having problems like scorching hot, burning, catching fire, flickering, carbon blacking, oxygen consuming, and release of green house gas etc. In contrast, candlelight organic light-emitting diode (OLED) can be made blue-hazard free and energy-efficient. The remaining challenges are to maximize its light-quality and enable printing feasibility, the latter of which would pave a way to cost-effective manufacturing. We hence demonstrate herein the design and fabrication of a candlelight OLED via wet-process. From retina protection perspective, its emission is 13, 12 and 8 times better than those of the blue-enriched white CFL, LED and OLED. If used at night, it is 9, 6 and 4 times better from melatonin generation perspective.

Effect of Stepwise Doping on Lifetime and Efficiency of Blue and White Phosphorescent Organic Light Emitting Diodes.

Science.gov (United States)

Lee, Song Eun; Lee, Ho Won; Lee, Seok Jae; Koo, Ja-ryong; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

2015-02-01

We investigated a light emission mechanism of blue phosphorescent organic light emitting diodes (PHOLEDs), using a stepwise doping profile of 2, 8, and 14 wt.% within the emitting layer (EML). We fabricated several blue PHOLEDs with phosphorescent blue emitter iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C2]picolinate doped in N,N'-dicarbazolyl-3,5-benzene as a p-type host material. A blue PHOLED with the highest doping concentration as part of the EML close to an electron transporting layer showed a maximum luminous efficiency of 20.74 cd/A, and a maximum external quantum efficiency of 10.52%. This can be explained by effective electron injection through a highly doped EML side. Additionally, a white OLED based on the doping profile was fabricated with two thin red EMLs within a blue EML maintaining a thickness of 30 nm for the entire EML. Keywords: Blue Phosphorescent Organic Light Emitting Diodes, Stepwise Doping Structure, Charge Trapping Effect.

Efficiency Control in Iridium Complex-Based Phosphorescent Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Boucar Diouf

2012-01-01

Full Text Available Key factors to control the efficiency in iridium doped red and green phosphorescent light emitting diodes (PhOLEDs are discussed in this review: exciton confinement, charge trapping, dopant concentration and dopant molecular structure. They are not independent from each other but we attempt to present each of them in a situation where its specific effects are predominant. A good efficiency in PhOLEDs requires the triplet energy of host molecules to be sufficiently high to confine the triplet excitons within the emitting layer (EML. Furthermore, triplet excitons must be retained within the EML and should not drift into the nonradiative levels of the electron or hole transport layer (resp., ETL or HTL; this is achieved by carefully choosing the EML’s adjacent layers. We prove how reducing charge trapping results in higher efficiency in PhOLEDs. We show that there is an ideal concentration for a maximum efficiency of PhOLEDs. Finally, we present the effects of molecular structure on the efficiency of PhOLEDs using red iridium complex dopant with different modifications on the ligand to tune its highest occupied molecular orbital (HOMO and lowest unoccupied molecular orbital (LUMO energies.

Portable, universal, and visual ion sensing platform based on the light emitting diode-based self-referencing-ion selective field-effect transistor.

Science.gov (United States)

Zhang, Xiaowei; Han, Yanchao; Li, Jing; Zhang, Libing; Jia, Xiaofang; Wang, Erkang

2014-02-04

In this work, a novel and universal ion sensing platform was presented, which enables the visual detection of various ions with high sensitivity and selectivity. Coaxial potential signals (millivolt-scale) of the sample from the self-referencing (SR) ion selective chip can be transferred into the ad620-based amplifier with an output of volt-scale potentials. The amplified voltage is high enough to drive a light emitting diode (LED), which can be used as an amplifier and indicator to report the sample information. With this double amplification device (light emitting diode-based self-referencing-ion selective field-effect transistor, LED-SR-ISFET), a tiny change of the sample concentration can be observed with a distinguishable variation of LED brightness by visual inspection. This LED-based luminescent platform provided a facile, low-cost, and rapid sensing strategy without the need of additional expensive chemiluminescence reagent and instruments. Moreover, the SR mode also endows this device excellent stability and reliability. With this innovative design, sensitive determination of K(+), H(+), and Cl(-) by the naked eye was achieved. It should also be noticed that this sensing strategy can easily be extended to other ions (or molecules) by simply integrating the corresponding ion (or molecule) selective electrode.

Nanoengineering of organic light-emitting diodes

International Nuclear Information System (INIS)

Lupton, J.M.

2000-11-01

This thesis reports nanoengineerging of the emission and transport properties of organic light-emitting diodes (LEDs). This is achieved by a control of the electronic material properties and the photonic device properties. A novel class of conjugated materials for electroluminescence (EL) applications is presented, based on successively branching, or dendritic, materials comprising an emissive core and a shielding dendritic architecture. Exciton localisation at the centre of these dendrimers is observed in both luminescence and absorption. A detailed quantum chemical investigation using an exciton model supports these findings and accurately describes the energies and oscillator strengths of transitions in the core and branches. The dendrimer generation describes the degree of branching and gives a direct measure of the separation and interaction between chromophores. Increasing generation is found to lead to a reduction in red tail emission. This correlates with an increase in operating field and LED efficiency. Dendrimer blends with triplet harvesting dendritic phosphors are also investigated and found to exhibit unique emission properties. A numerical device model is presented, which is used to describe the temperature dependence of single layer polymer LEDs by fitting the field-dependent mobility and the barrier to hole injection. The device model is also used to obtain mobility values for the dendrimer materials, which are in excellent agreement with results obtained from time-of-flight measurements. The dendrimer generation is shown to provide a direct control of hopping mobility, which decreases by two orders of magnitude as the dendrimer generation increases from 0 to 3. The photonic properties and spontaneous emission of an LED are modified by incorporating a periodic wavelength scale microstructure into the emitting film. This is found to double the amount of light emitted with no effect on the device current. An investigation of the angular dependence

Aggregation in organic light emitting diodes

Science.gov (United States)

Meyer, Abigail

Organic light emitting diode (OLED) technology has great potential for becoming a solid state lighting source. However, there are inefficiencies in OLED devices that need to be understood. Since these inefficiencies occur on a nanometer scale there is a need for structural data on this length scale in three dimensions which has been unattainable until now. Local Electron Atom Probe (LEAP), a specific implementation of Atom Probe Tomography (APT), is used in this work to acquire morphology data in three dimensions on a nanometer scale with much better chemical resolution than is previously seen. Before analyzing LEAP data, simulations were used to investigate how detector efficiency, sample size and cluster size affect data analysis which is done using radial distribution functions (RDFs). Data is reconstructed using the LEAP software which provides mass and position data. Two samples were then analyzed, 3% DCM2 in C60 and 2% DCM2 in Alq3. Analysis of both samples indicated little to no clustering was present in this system.

GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

KAUST Repository

Shen, Chao

2017-01-30

A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S.

2017-01-01

A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

Highly efficient deep-blue organic light emitting diode with a carbazole based fluorescent emitter

Science.gov (United States)

Sahoo, Snehasis; Dubey, Deepak Kumar; Singh, Meenu; Joseph, Vellaichamy; Thomas, K. R. Justin; Jou, Jwo-Huei

2018-04-01

High efficiency deep-blue emission is essential to realize energy-saving, high-quality display and lighting applications. We demonstrate here a deep-blue organic light emitting diode using a novel carbazole based fluorescent emitter 7-[4-(diphenylamino)phenyl]-9-(2-ethylhexyl)-9H-carbazole-2-carbonitrile (JV234). The solution processed resultant device shows a maximum luminance above 1,750 cd m-2 and CIE coordinates (0.15,0.06) with a 1.3 lm W-1 power efficiency, 2.0 cd A-1 current efficiency, and 4.1% external quantum efficiency at 100 cd m-2. The resulting deep-blue emission enables a greater than 100% color saturation. The high efficiency may be attributed to the effective host-to-guest energy transfer, suitable device architecture facilitating balanced carrier injection and low doping concentration preventing efficiency roll-off caused by concentration quenching.

Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

Science.gov (United States)

Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

2006-01-01

A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from logic 1 (+5 V) to logic 0 (+1.7 V). The entire instrument provides an inherently digital output of light intensity measurements for a few cents. A light dependent resistor (LDR) modified with similar sensor membrane was also used as a comparison method. Both the LED sensor and the LDR sensor responded to various pH buffer solutions in a similar way to obtain sigmoidal curves expected of the dye. The pKa value obtained for the sensors was found to agree with the literature value.

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

International Nuclear Information System (INIS)

Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei

2014-01-01

In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-01-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Presa, S., E-mail: silvino.presa@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); School of Engineering, University College Cork, Cork (Ireland); Maaskant, P. P.; Corbett, B. [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); Kappers, M. J.; Humphreys, C. J. [Dep. Material Science and Metallurgy, University of Cambridge, CB3 0FS, Cambridge (United Kingdom)

2016-07-15

We present a comprehensive study of the emission spectra and electrical characteristics of InGaN/GaN multi-quantum well light-emitting diode (LED) structures under resonant optical pumping and varying electrical bias. A 5 quantum well LED with a thin well (1.5 nm) and a relatively thick barrier (6.6 nm) shows strong bias-dependent properties in the emission spectra, poor photovoltaic carrier escape under forward bias and an increase in effective resistance when compared with a 10 quantum well LED with a thin (4 nm) barrier. These properties are due to a strong piezoelectric field in the well and associated reduced field in the thicker barrier. We compare the voltage ideality factors for the LEDs under electrical injection, light emission with current, photovoltaic mode (PV) and photoluminescence (PL) emission. The PV and PL methods provide similar values for the ideality which are lower than for the resistance-limited electrical method. Under optical pumping the presence of an n-type InGaN underlayer in a commercial LED sample is shown to act as a second photovoltaic source reducing the photovoltage and the extracted ideality factor to less than 1. The use of photovoltaic measurements together with bias-dependent spectrally resolved luminescence is a powerful method to provide valuable insights into the dynamics of GaN LEDs.

Benzoporphyrin derivative and light-emitting diode for use in photodynamic therapy: Applications of space light-emitting diode technology

International Nuclear Information System (INIS)

Whelan, Harry T.; Houle, John M.; Bajic, Dawn M.; Schmidt, Meic H.; Reichert, Kenneth W. II; Meyer, Glenn A.

1998-01-01

Photodynamic therapy (PDT) is a cancer treatment modality that recently has been applied as adjuvant therapy for brain tumors. PDT consists of intravenously injecting a photosensitizer, which preferentially accumulates in tumor cells, into a patient and then activating the photosensitizer with a light source. This results in free radical generation followed by cell death. The development of more effective light sources for PDT of brain tumors has been facilitated by applications of space light-emitting diode array technology; thus permitting deeper tumor penetration of light and use of better photosensitizers. Currently, the most commonly used photosensitizer for brain tumor PDT is Photofrin registered . Photofrin registered is a heterogeneous mixture of compounds derived from hematoporphyrin. Photofrin registered is activated with a 630 nm laser light and does destroy tumor cells in animal models and humans. However, treatment failure does occur using this method. Most investigators attribute this failure to the limited penetration of brain tissue by a 630 nm laser light and to the fact that Photofrin registered has only a minor absorption peak at 630 nm, meaning that only a small fraction of the chemical is activated. Benzoporphyrin Derivative Monoacid Ring A (BPD) is a new, second generation photosensitizer that can potentially improve PDT for brain tumors. BPD has a major absorption peak at 690 nm, which gives it two distinct advantages over Photofrin registered . First, longer wavelengths of light penetrate brain tissue more easily so that larger tumors could be treated, and second, the major absorption peak means that a larger fraction of the drug is activated upon exposure to light. In the first part of this project we have studied the tumoricidal effects of BPD in vitro using 2A9 canine glioma and U373 human glioblastoma cell cultures. Using light emitting diodes (LED) with a peak emission of 688 nm as a light source, cell kill of up to 86 percent was

The efficiency challenge of nitride light-emitting diodes for lighting

KAUST Repository

Weisbuch, Claude

2015-03-13

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high intensity discharge lamps used today in the main energy consuming lighting sectors, industrial, commercial and outdoors, with more efficient and better light quality lamps. We show that both from the point of view of cost of ownership and carbon emissions reduction, the relevant metric is efficiency, more than the cost of lumens. Then, progress from present performance requires identification of the loss mechanisms in light emission from LEDs, and solutions competing with mainstream c-plane LEDS grown on sapphire need to be on par with these. Special attention is devoted to a discussion of the efficiency droop mechanisms, and of a recent direct measurement of Auger generated electrons which appear to be responsible for droop.

Topical methyl-aminolevulinate photodynamic therapy using red light-emitting diode light for treatment of multiple actinic keratoses: A randomized, double-blind, placebo-controlled study.

Science.gov (United States)

Pariser, David; Loss, Robert; Jarratt, Michael; Abramovits, William; Spencer, James; Geronemus, Roy; Bailin, Philip; Bruce, Suzanne

2008-10-01

The use of light-emitting diode light offers practical advantages in photodynamic therapy (PDT) with topical methyl-aminolevulinate (MAL) for management of actinic keratoses (AK). We sought to evaluate the efficacy of MAL PDT using red light-emitting diode light. We conducted a multicenter, double-blind, randomized study. A total of 49 patients with 363 AK lesions had 16.8% MAL cream applied under occlusion for 3 hours, and 47 patients with 360 AK lesions had vehicle cream similarly applied. The lesions were then illuminated (630 nm, light dose 37 J/cm2) with repeated treatment 1 week later. Complete lesion and patient (all lesions showing complete response) response rates were evaluated 3 months after last treatment. MAL PDT was superior (PAK. MAL PDT using red light-emitting diode light is an appropriate treatment alternative for multiple AK lesions.

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

KAUST Repository

Shen, Chao; Ng, Tien Khee; Lee, Changmin; Leonard, John T.; Nakamura, Shuji; Speck, James S.; Denbaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL

BaZrO3 perovskite nanoparticles as emissive material for organic/inorganic hybrid light-emitting diodes

DEFF Research Database (Denmark)

Tamulevičius, S.; Ivaniuk, K.; Cherpak, V.

2017-01-01

In the present work we have demonstrated double-channel emission from organic exciplexes coupled to inorganic nanoparticles. The process is demonstrated by yellow-green emission in light-emitting diodes based on organic exciplexes hybridized with perovskite-type dispersed BaZrO3 nanoparticles...

Instense red phosphors for UV light emitting diode devices.

Science.gov (United States)

Cao, Fa-Bin; Tian, Yan-Wen; Chen, Yong-Jie; Xiao, Lin-Jiu; Liu, Yun-Yi

2010-03-01

Ca(x)Sr1-x-1.5y-0.5zMoO4:yEu3+ zNa+ red phosphors were prepared by solid-state reaction using Na+ as charge supply for LEDs (light emitting diodes). The content of charge compensator, Ca2+ concentration, synthesis temperature, reaction time, and Eu3+ concentration were the keys to improving the properties of luminescence and crystal structure of red phosphors. The photoluminescence spectra shows the red phosphors are effectively excited at 616 nm by 311 nm, 395 nm, and 465 nm light. The wavelengths of 395 and 465 nm nicely match the widely applied emission wavelengths of ultraviolet or blue LED chips. Its chromaticity coordinates (CIE) are calculated to be x = 0.65, y = 0.32. Bright red light can be observed by the naked eye from the LED-based Ca0.60Sr0.25MoO4:0.08Eu3+ 0.06Na+.

Steps towards a GaN nanowire based light emitting diode and its integration with Si-MOS technology

OpenAIRE

Limbach, Friederich

2012-01-01

In dieser Arbeit wird die Machbarkeit der Herstellung von Leuchtdioden Strukturen (LEDs) in einzelnen GaN Nanodrähten (ND) und deren Integration mit herkömmlicher Si Technologie untersucht. Hierzu wird zunächst ein generelles Verständnis des Wachstums von GaN ND erarbeitet und dargestellt. Es folgen Untersuchungen zum Einfluss von Dotierstoffen, wie z.B. Mg und Si, auf das Wachstum der ND. Dieses Wissen wird anschließend angewandt um Dotierübergänge in GaN ND herzustellen die nominell n-i-p ...

Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

KAUST Repository

Kang, Chun Hong

2016-08-23

Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

KAUST Repository

Kang, Chun Hong; Shen, Chao; M. Saheed, M. Shuaib; Mohamed, Norani Muti; Ng, Tien Khee; Ooi, Boon S.; Burhanudin, Zainal Arif

2016-01-01

Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

Noniterative algorithm for improving the accuracy of a multicolor-light-emitting-diode-based colorimeter

Science.gov (United States)

Yang, Pao-Keng

2012-05-01

We present a noniterative algorithm to reliably reconstruct the spectral reflectance from discrete reflectance values measured by using multicolor light emitting diodes (LEDs) as probing light sources. The proposed algorithm estimates the spectral reflectance by a linear combination of product functions of the detector's responsivity function and the LEDs' line-shape functions. After introducing suitable correction, the resulting spectral reflectance was found to be free from the spectral-broadening effect due to the finite bandwidth of LED. We analyzed the data for a real sample and found that spectral reflectance with enhanced resolution gives a more accurate prediction in the color measurement.

Medical Applications of Space Light-Emitting Diode Technology--Space Station and Beyond

Energy Technology Data Exchange (ETDEWEB)

Whelan, H.T.; Houle, J.M.; Donohoe, D.L.; Bajic, D.M.; Schmidt, M.H.; Reichert, K.W.; Weyenberg, G.T.; Larson, D.L.; Meyer, G.A.; Caviness, J.A.

1999-06-01

Space light-emitting diode (LED) technology has provided medicine with a new tool capable of delivering light deep into tissues of the body, at wavelengths which are biologically optimal for cancer treatment and wound healing. This LED technology has already flown on Space Shuttle missions, and shows promise for wound healing applications of benefit to Space Station astronauts.

Three-dimensional modeling of charge transport, injection and recombination in organic light-emitting diodes

NARCIS (Netherlands)

Holst, van der J.J.M.

2010-01-01

Organic light-emitting diodes (OLEDs) are ideally suited for lighting and display applications. Commercial OLED displays as well as OLED white-light sources are presently being introduced to the market. Essential electronic processes in OLEDs are the injection of electrons and holes into an organic

Blue light emitting diodes for optical stimulation of quartz in retrospective dosimetry and dating

DEFF Research Database (Denmark)

Bøtter-Jensen, L.; Duller, G.A.T.; Murray, A.S.

1999-01-01

Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LE......, preliminary results from ramping the blue light power output with time are demonstrated. It is shown that this technique enables the separation of OSL components with differing stimulation rates.......Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LEDs...... (470 nm) gives order of magnitude greater rate of stimulation in quartz than that from conventional blue-green light filtered from a halogen lamp. A practical blue LED OSL configuration is described. From comparisons of OSL decay curves produced by green and blue light sources, and by examination...

Influence of TiO2 Nanoparticles on Enhancement of Optoelectronic Properties of PFO-Based Light Emitting Diode

Directory of Open Access Journals (Sweden)

Bandar Ali Al-Asbahi

2013-01-01

Full Text Available Improvement on optoelectronic properties of poly (9,9′-di-n-octylfluorenyl-2.7-diyl- (PFO- based light emitting diode upon incorporation of TiO2 nanoparticles (NPs is demonstrated. The PFO/TiO2 nanocomposites with different weight ratios between 5 and 35 wt.% were prepared using solution blending method before they were spin coated onto Indium Tin Oxide substrate. Then a thin Al layer was deposited onto the nanocomposite layer to act as top electrode. The nanocomposites were tested as emissive layer in organic light emitting diodes (OLEDs. The TiO2 NPs played the most crucial role in facilitating charge transport and electrical injection and thus improved device performance in terms of turn-on voltage, electroluminescence spectra (EL, luminance, and luminance efficiency. The best composition was OLED with 5 wt.% TiO2 NPs content having moderate surface roughness and well distribution of NPs. The device performance was reduced at higher TiO2 NPs content due to higher surface roughness and agglomeration of TiO2 NPs. This work demonstrated the importance of optimum TiO2 NPs content with uniform distribution and controlled surface roughness of the emissive layer for better device performance.

Stolephorus sp Behavior in Different LED (Light Emitting Diode) Color and Light Intensities

Science.gov (United States)

Fitri Aristi, D. P.; Ramadanita, I. A.; Hapsari, T. D.; Susanto, A.

2018-02-01

This research aims to observe anchovy (Stolephorus sp) behavior under different LED light intensities that affect eye physiology (cell cone structure). The materials used were Stolephorus sp taken from the waters off Jepara and 13 and 10 watt light emitting diode (LED). The research method was an experiment conducted from March through August 2015 in the waters off Jepara. Data analysis of visual histology and fish respond was carried out at the fishing gear material laboratory, anatomy and cultivate. Cone cell structure (mosaic cone) of Stolephorus sp forms a connected regular square pattern with every single cone surrounded by four double cones, which indicate that anchovies are sensitive to light. The 13 watt LED (628 lux) has faster response than the 10 watt LED (531 lux) as it has wider and higher emitting intensity, which also attracts fish to gather quicker.

Simulations of emission from microcavity tandem organic light-emitting diodes

International Nuclear Information System (INIS)

Biswas, Rana; Xu, Chun; Zhao, Weijun; Liu, Rui; Shinar, Ruth; Shinar, Joseph

2011-01-01

Microcavity tandem organic light-emitting diodes (OLEDs) are simulated and compared to experimental results. The simulations are based on two complementary techniques: rigorous finite element solutions of Maxwell's equations and Fourier space scattering matrix solutions. A narrowing and blue shift of the emission spectrum relative to the noncavity single unit OLED is obtained both theoretically and experimentally. In the simulations, a distribution of emitting sources is placed near the interface of the electron transport layer tris(8-hydroxyquinoline) Al (Alq 3 ) and the hole transport layer (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine) (α-NPB). Far-field electric field intensities are simulated. The simulated widths of the emission peaks also agree with the experimental results. The simulations of the 2-unit tandem OLEDs shifted the emission to shorter wavelength, in agreement with experimental measurements. The emission spectra's dependence on individual layer thicknesses also agreed well with measurements. Approaches to simulate and improve the light emission intensity from these OLEDs, in particular for white OLEDs, are discussed.

Organic Light-Emitting Diodes Based on Phthalimide Derivatives: Improvement of the Electroluminescence Properties

Directory of Open Access Journals (Sweden)

Frédéric Dumur

2018-03-01

Full Text Available In this study, a phthalimide-based fluorescent material has been examined as a green emitter for multilayered organic light-emitting diodes (OLEDs. By optimizing the device stacking, a maximum brightness of 28,450 cd/m2 at 11.0 V and a maximum external quantum efficiency of 3.11% could be obtained. Interestingly, OLEDs fabricated with Fluo-2 presented a 20-fold current efficiency improvement compared to the previous results reported in the literature, evidencing the crucial role of the device stacking in the electroluminescence (EL performance of a selected emitter. Device lifetime was also examined and an operational stability comparable to that reported for a standard triplet emitter i.e., bis(4-methyl-2,5-diphenyl-pyridineiridium(III acetylacetonate [(mdppy2Iracac] was evidenced.

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

Science.gov (United States)

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Light emitting diodes as an alternative ambient illumination source in photolithography environment

DEFF Research Database (Denmark)

Corell, Dennis Dan; Ou, Haiyan; Dam-Hansen, Carsten

2009-01-01

We explored an alternative light emitting diode (LED) - based solution to replace the existing yellow fluorescent light tubes (YFT) used in photolithography rooms. A no-blue LED lamp was designed and a prototype was fabricated. For both solutions, the spectral power distribution (SPD) was measured......, the colorimetric values were calculated, and a visual comparison using Gretagmacbeth colorcharts was performed. The visual comparison showed that the LED bulb was better to render colors despite a low color rendering index (CRI). Furthermore, the LED bulb was tested in a photolithography room...... and there was no exposure to the photoresist even after 168 hours illumination....

Pulsed operation of high-power light emitting diodes for imaging flow velocimetry

International Nuclear Information System (INIS)

Willert, C; Klinner, J; Moessner, S; Stasicki, B

2010-01-01

High-powered light emitting diodes (LED) are investigated for possible uses as light sources in flow diagnostics, in particular, as an alternative to laser-based illumination in particle imaging flow velocimetry in side-scatter imaging arrangements. Recent developments in solid state illumination resulted in mass-produced LEDs that provide average radiant power in excess of 10 W. By operating these LEDs with short duration, pulsed currents that are considerably beyond their continuous current damage threshold, light pulses can be generated that are sufficient to illuminate and image micron-sized particles in flow velocimetry. Time-resolved PIV measurements in water at a framing rate of 2kHz are presented. The feasibility of LED-based PIV measurements in air is also demonstrated

Pyridine substituted spirofluorene derivative as an electron transport material for high efficiency in blue organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Jeon, Soon Ok; Yook, Kyoung Soo; Lee, Jun Yeob, E-mail: leej17@dankook.ac.k

2010-11-01

The quantum efficiency of blue fluorescent organic light-emitting diodes was enhanced by 20% using a pyridine substituted spirofluorene-benzofluorene derivative as an electron transport material. 2',7'-Di(pyridin-3-yl)spiro[benzofluorene-7,9'-fluorene] (SPBP) was synthesized and it was used as the electron transport material to block the hole leakage from the emitting layer. The improvement of the quantum efficiency and power efficiency of the blue fluorescent organic light-emitting diodes using the SPBP was investigated.

Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime

Science.gov (United States)

Cusumano, P.

2016-02-01

We report the results of lifetime DC testing at constant current of not-encapsulated organic light emitting diodes (OLEDs) based on Tris (8 idroxyquinoline) aluminum (Alq3) as emitting material. In particular, a voltage decrease during the initial stage of the lifetime test is observed. The cause of this behavior is also discussed, mainly linked to initial Joule self-heating of the device, rising its temperature above room temperature until thermal equilibrium is reached at steady state.

Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

International Nuclear Information System (INIS)

Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

2001-01-01

A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

Hybrid Structure White Organic Light Emitting Diode for Enhanced Efficiency by Varied Doping Rate.

Science.gov (United States)

Kim, Dong-Eun; Kang, Min-Jae; Park, Gwang-Ryeol; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo; Shin, Hoon-Kyu

2016-03-01

Novel materials based on Zn(HPB)2 and Ir-complexes were synthesized as blue or red emitters, respectively. White organic light emitting diodes were fabricated using the Zn(HPB)2 as a blue emitting layer, Ir-complexes as a red emitting layer and Alq3 as a green emitting layer. The obtained experimental results, were based on white OLEDs fabricated using double emission layers of Zn(HPB)2 and Alq3:Ir-complexes. The doping rate of the Ir-complexes was varied at 0.4%, 0.6%, 0.8% and 1.0%. When the doping rate of the Alq3:Ir-complexes was 0.6%, a white emission was achieved. The Commission Internationale de l'Eclairage coordinates of the device's white emission were (0.316, 0.331) at an applied voltage of 10.75 V.

The application of the light emitting diode in MR room lighting

International Nuclear Information System (INIS)

Cao Jun; Wang Chunhong

2009-01-01

Objective: To investigate the application of white light emitting diode (LED) in magnetic resonance room, in order to resolve the damageable problem of incandescent lights under the high magnetic field. Methods: The white LEDs and the incandescent lights were installed in MR room, the number of damaged lights was compared after 300 hours. Chi-square test was used for the statistical analysis. And the illuminance and 50 000 hours electricity consumption between LED and incandescent lights were calculated. Results: The number of damaged LED and incandescent lights was 2 and 32, respectively and there was a significant difference (χ 2 =48.813, P=0.000). The illuminance of the LED and incandescent lights was 155 lx and 100 lx at the 0.75 m horizontal level and the 50 000 hour's electricity consumption was 200 kW and 5000 kW, respectively. Conclusion: It is feasible and a great advantage to use the white LEDs in MR room lighting. (authors)

Large magneto-conductance and magneto-electroluminescence in exciplex-based organic light-emitting diodes at room temperature

Science.gov (United States)

Ling, Yongzhou; Lei, Yanlian; Zhang, Qiaoming; Chen, Lixiang; Song, Qunliang; Xiong, Zuhong

2015-11-01

In this work, we report on large magneto-conductance (MC) over 60% and magneto-electroluminescence (MEL) as high as 112% at room temperature in an exciplex-based organic light-emitting diode (OLED) with efficient reverse intersystem crossing (ISC). The large MC and MEL are individually confirmed by the current density-voltage characteristics and the electroluminescence spectra under various magnetic fields. We proposed that this type of magnetic field effect (MFE) is governed by the field-modulated reverse ISC between the singlet and triplet exciplex. The temperature-dependent MFEs reveal that the small activation energy of reverse ISC accounts for the large MFEs in the present exciplex-based OLEDs.

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

International Nuclear Information System (INIS)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

2016-01-01

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

Energy Technology Data Exchange (ETDEWEB)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1086 (United States)

2016-01-14

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].

Stacking layered structure of polymer light emitting diodes prepared by evaporative spray deposition using ultradilute solution for improving carrier balance

International Nuclear Information System (INIS)

Aoki, Youichi; Shakutsui, Masato; Fujita, Katsuhiko

2009-01-01

Polymer light-emitting diodes (PLEDs) with staking layered structures are prepared by the evaporative spray deposition using ultradilute solution (ESDUS) method, which has enabled forming a polymer layer onto another polymer layer even if both polymers are soluble in a solvent used for the preparation. By this method, polymers having various HOMO and LUMO levels can be stacked as a hole transport layer, an emitting layer and an electron transport layer as commonly employed in small molecule-based organic light emitting diodes. Here we demonstrated that a PLED having a tri-layer structure using three kinds of polymers showed significant improvement in quantum efficiency compared with those having a single or bi-layer structure of corresponding polymers.

Topology optimisation of passive coolers for light-emitting diode lamps

DEFF Research Database (Denmark)

Alexandersen, Joe

2015-01-01

This work applies topology optimisation to the design of passive coolers for light-emitting diode (LED) lamps. The heat sinks are cooled by the natural convection currents arising from the temperature difference between the LED lamp and the surrounding air. A large scale parallel computational....... The optimisation results show interesting features that are currently being incorporated into industrial designs for enhanced passive cooling abilities....

Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

Energy Technology Data Exchange (ETDEWEB)

Zhou, Yiyin; Dou, Wei; Pham, Thach; Ghetmiri, Seyed Amir; Mosleh, Aboozar; Alher, Murtadha; Naseem, Hameed; Yu, Shui-Qing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Du, Wei, E-mail: weidu@uark.edu [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, Arkansas 71601 (United States); Al-Kabi, Sattar [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Department of Physics, Wasit University, Kut 52001 (Iraq); Margetis, Joe; Tolle, John [ASM, 3440 East University Drive, Phoenix, Arizona 85034 (United States); Sun, Greg; Soref, Richard [Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States); Li, Baohua [Arktonics, LLC, 1339 South Pinnacle Drive, Fayetteville, Arkansas 72701 (United States); Mortazavi, Mansour [Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, Arkansas 71601 (United States)

2016-07-14

Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge double heterostructures (DHS) that were grown directly on a Si substrate via a chemical vapor deposition system. Both photoluminescence and electroluminescence spectra have been characterized at temperatures from 300 to 77 K. Based on our theoretical calculation, all GeSn alloys in this study are indirect bandgap materials. However, due to the small energy separation between direct and indirect bandgap, and the fact that radiative recombination rate greater than non-radiative, the emissions are mainly from the direct Γ-valley to valence band transitions. The electroluminescence emissions under current injection levels from 102 to 357 A/cm{sup 2} were investigated at 300 K. The monotonic increase of the integrated electroluminescence intensity was observed for each sample. Moreover, the electronic band structures of the DHS were discussed. Despite the indirect GeSn bandgap owing to the compressive strain, type-I band alignment was achieved with the barrier heights ranging from 11 to 47 meV.

Host-free, yellow phosphorescent material in white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lee, Meng-Ting; Chu, Miao-Tsai; Lin, Jin-Sheng; Tseng, Mei-Rurng, E-mail: osolomio.ac89g@nctu.edu.t [Material and Chemical Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan 310 (China)

2010-11-10

A white organic light-emitting diode (WOLED) with a high power efficiency has been demonstrated by dispersing a host-free, yellow phosphorescent material in between double blue phosphorescent emitters. The device performance achieved a comparable value to that of using a complicated host-guest doping system to form the yellow emitter in WOLEDs. Based on this device concept as well as the molecular engineering of blue phosphorescent host material and light-extraction film, a WOLED with a power efficiency of 65 lm W{sup -1} at a practical brightness of 1000 cd m{sup -2} with Commission Internationale d'Echariage coordinates (CIE{sub x,y}) of (0.37, 0.47) was achieved. (fast track communication)

Combination of carbon dot and polymer dot phosphors for white light-emitting diodes.

Science.gov (United States)

Sun, Chun; Zhang, Yu; Sun, Kai; Reckmeier, Claas; Zhang, Tieqiang; Zhang, XiaoYu; Zhao, Jun; Wu, Changfeng; Yu, William W; Rogach, Andrey L

2015-07-28

We realized white light-emitting diodes with high color rendering index (85-96) and widely variable color temperatures (2805-7786 K) by combining three phosphors based on carbon dots and polymer dots, whose solid-state photoluminescence self-quenching was efficiently suppressed within a polyvinyl pyrrolidone matrix. All three phosphors exhibited dominant absorption in the UV spectral region, which ensured the weak reabsorption and no energy transfer crosstalk. The WLEDs showed excellent color stability against the increasing current because of the similar response of the tricolor phosphors to the UV light variation.

Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City

Energy Technology Data Exchange (ETDEWEB)

Myer, Michael; Goettel, Russell T.; Kinzey, Bruce R.

2012-09-30

A review of five post-top light-emitting diode (LED) pedestrian luminaires installed in New York City's Central Park for possible replacement to the existing metal halide post-top luminaire. This report reviews the energy savings potential and lighting delivered by the LED post-top luminaires.

Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm

NARCIS (Netherlands)

Monat, C.; Alloing, B.; Zinoni, C.; Li, L.; Fiore, A.

2006-01-01

A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro

Electrical aging effect of ZnS based quantum dots for white light-emitting diodes

Science.gov (United States)

Kim, Yohan; Ippen, Christian; Greco, Tonino; Jang, Ilwan; Park, Sungkyu; Oh, Min Suk; Han, Chul Jong; Lee, Jeongno; Wedel, Armin; Kim, Jiwan

2014-03-01

The present work reports cadmium-free colloidal ZnS:Al quantum dot (QD) based white quantum dot light-emitting diodes (QD-LEDs). The device was fabricated with a structure of ITO/PEDOT:PSS/PVK/QDs/TPBi/LiF/Al using synthesized ZnS:Al QDs which has 393 nm of peak wavelength and sub peaks in visible wavelength. White emission with high color rending index (CRI) was achieved by the combination of blue emission from PVK and ZnS:Al QDs, electroplex emission at the interface between PVK and ZnS:Al QDs, and Al traps/defects emission, which are controlled by electrical aging effect. The characteristic of our device shows the potential for spectrum tunable and Cd-free white QD-LEDs in the near future.

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

Science.gov (United States)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

KAUST Repository

Shen, Chao

2017-02-16

III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the

Novel Strategy for Photopatterning Emissive Polymer Brushes for Organic Light Emitting Diode Applications.

Science.gov (United States)

Page, Zachariah A; Narupai, Benjaporn; Pester, Christian W; Bou Zerdan, Raghida; Sokolov, Anatoliy; Laitar, David S; Mukhopadhyay, Sukrit; Sprague, Scott; McGrath, Alaina J; Kramer, John W; Trefonas, Peter; Hawker, Craig J

2017-06-28

A light-mediated methodology to grow patterned, emissive polymer brushes with micron feature resolution is reported and applied to organic light emitting diode (OLED) displays. Light is used for both initiator functionalization of indium tin oxide and subsequent atom transfer radical polymerization of methacrylate-based fluorescent and phosphorescent iridium monomers. The iridium centers play key roles in photocatalyzing and mediating polymer growth while also emitting light in the final OLED structure. The scope of the presented procedure enables the synthesis of a library of polymers with emissive colors spanning the visible spectrum where the dopant incorporation, position of brush growth, and brush thickness are readily controlled. The chain-ends of the polymer brushes remain intact, affording subsequent chain extension and formation of well-defined diblock architectures. This high level of structure and function control allows for the facile preparation of random ternary copolymers and red-green-blue arrays to yield white emission.

Green synthetic strategy of BCNO nanostructure and phosphor-based light – Emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kang, Yue [The Quartermaster Research Institute of General Logistics Department, Beijing 100010 (China); Yuan, Bo [Chemical Defense Institute of China, Beijing 100010 (China); Zhang, Dongjiu [Key Laboratory of Space Launching Site Reliability Technology, Hainan 570100 (China); Ma, Tian; Huang, Xiancong [The Quartermaster Research Institute of General Logistics Department, Beijing 100010 (China); Chu, Zengyong [College of Science, National University of Defense Technology, Changsha 410073 (China); Lai, Kan [The Quartermaster Research Institute of General Logistics Department, Beijing 100010 (China)

2016-11-15

BCNO phosphor has been paid much attention due to their unique physical, electronic and optical properties. Here we have successfully obtained BCNO nano-particle phosphor by microwave treating from boric acid, urea, and glucose at low temperatures and in short reaction time. Glucose decomposed into graphene quantum dots (GQDs), which facilitated the formation of hexagonal boron nitride (h-BN). Through our method, GQDs domains were uniformly incorporated into h-BN, leading to the formation of BCNO and decrease of bandgap. BCNO demonstrated excellent performance in light emitting diodes (LEDs) with green and blue light. We envision that this BCNO phosphor will enable the next generation blue and green LED devices due to the easiness of large scale fabrication at an economic cost.

Green synthetic strategy of BCNO nanostructure and phosphor-based light – Emitting diodes

International Nuclear Information System (INIS)

Kang, Yue; Yuan, Bo; Zhang, Dongjiu; Ma, Tian; Huang, Xiancong; Chu, Zengyong; Lai, Kan

2016-01-01

BCNO phosphor has been paid much attention due to their unique physical, electronic and optical properties. Here we have successfully obtained BCNO nano-particle phosphor by microwave treating from boric acid, urea, and glucose at low temperatures and in short reaction time. Glucose decomposed into graphene quantum dots (GQDs), which facilitated the formation of hexagonal boron nitride (h-BN). Through our method, GQDs domains were uniformly incorporated into h-BN, leading to the formation of BCNO and decrease of bandgap. BCNO demonstrated excellent performance in light emitting diodes (LEDs) with green and blue light. We envision that this BCNO phosphor will enable the next generation blue and green LED devices due to the easiness of large scale fabrication at an economic cost.

Interference phenomenon determines the color in an organic light emitting diode

Science.gov (United States)

Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle

1997-06-01

We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.

Recycling of Gallium from End-of-Life Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Nagy S.

2017-06-01

Full Text Available Nowadays Light Emitting Diodes (LEDs are widely utilized. They are applied as backlighting in Liquid Crystal Displays (LCD and TV sets or as lighting equipments in homes, cars, instruments and street-lightning. End of life equipments are containing more and more LEDs. The recovery of valuable materials – such as Ga, Au, Cu etc. – from the LEDs is essential for the creating the circular economy. First task is the development of a proper recycling technology. Most of the researchers propose fully chemical or thermal-chemical pathway for the recycling of LEDs.

Recent advances in light outcoupling from white organic light-emitting diodes

Science.gov (United States)

Gather, Malte C.; Reineke, Sebastian

2015-01-01

Organic light-emitting diodes (OLEDs) have been successfully introduced to the smartphone display market and have geared up to become contenders for applications in general illumination where they promise to combine efficient generation of white light with excellent color quality, glare-free illumination, and highly attractive designs. Device efficiency is the key requirement for such white OLEDs, not only from a sustainability perspective, but also because at the high brightness required for general illumination, losses lead to heating and may, thus, cause rapid device degradation. The efficiency of white OLEDs increased tremendously over the past two decades, and internal charge-to-photon conversion can now be achieved at ˜100% yield. However, the extraction of photons remains rather inefficient (typically physics of outcoupling in white OLEDs and review recent progress toward making light extraction more efficient. We describe how structures that scatter, refract, or diffract light can be attached to the outside of white OLEDs (external outcoupling) or can be integrated close to the active layers of the device (internal outcoupling). Moreover, the prospects of using top-emitting metal-metal microcavity designs for white OLEDs and of tuning the average orientation of the emissive molecules within the OLED are discussed.

Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate the feasibility of using vertical GaN Schottky diodes for high-power rectification...

The Use of Light-Emitting Diodes (LEDs) as Green and Red/Far-Red Light Sources in Plant Physiology.

Science.gov (United States)

Jackson, David L.; And Others

1985-01-01

The use of green, red, and far-red light-emitting diodes (LEDs) as light sources for plant physiological studies is outlined and evaluated. Indicates that LED lamps have the advantage over conventional light sources in that they are lightweight, low-cost, portable, easily constructed, and do not require color filters. (Author/DH)

Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To...

Paired emitter-detector light emitting diodes for the measurement of lead(II) and cadmium(II)

International Nuclear Information System (INIS)

Lau, K.-T.; McHugh, Eimear; Baldwin, Susan; Diamond, Dermot

2006-01-01

A transmittance mode optical device based on using a reverse biased light emitting diode (LED) as light detector has been developed for colorimetric analysis. This new optical device was validated with bromocresol green dye for absorbance measurements before being employed for detecting cadmium(II) and lead(II) in water. Results show that the performance of this LED-based device is comparable to much more expensive bench top UV-vis instruments, but with the advantages of being low cost, low power and simple to operate

Paired emitter-detector light emitting diodes for the measurement of lead(II) and cadmium(II)

Energy Technology Data Exchange (ETDEWEB)

Lau, K.-T. [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland)]. E-mail: kim.lau@dcu.ie; McHugh, Eimear [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland); Baldwin, Susan [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland); Diamond, Dermot [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland)]. E-mail: Dermot.diamond@dcu.ie

2006-05-31

A transmittance mode optical device based on using a reverse biased light emitting diode (LED) as light detector has been developed for colorimetric analysis. This new optical device was validated with bromocresol green dye for absorbance measurements before being employed for detecting cadmium(II) and lead(II) in water. Results show that the performance of this LED-based device is comparable to much more expensive bench top UV-vis instruments, but with the advantages of being low cost, low power and simple to operate.

Self-sensing of temperature rises on light emitting diode based optrodes

Science.gov (United States)

Dehkhoda, Fahimeh; Soltan, Ahmed; Ponon, Nikhil; Jackson, Andrew; O'Neill, Anthony; Degenaar, Patrick

2018-04-01

Objective. This work presents a method to determine the surface temperature of microphotonic medical implants like LEDs. Our inventive step is to use the photonic emitter (LED) employed in an implantable device as its own sensor and develop readout circuitry to accurately determine the surface temperature of the device. Approach. There are two primary classes of applications where microphotonics could be used in implantable devices; opto-electrophysiology and fluorescence sensing. In such scenarios, intense light needs to be delivered to the target. As blue wavelengths are scattered strongly in tissue, such delivery needs to be either via optic fibres, two-photon approaches or through local emitters. In the latter case, as light emitters generate heat, there is a potential for probe surfaces to exceed the 2 °C regulatory. However, currently, there are no convenient mechanisms to monitor this in situ. Main results. We present the electronic control circuit and calibration method to monitor the surface temperature change of implantable optrode. The efficacy is demonstrated in air, saline, and brain. Significance. This paper, therefore, presents a method to utilize the light emitting diode as its own temperature sensor.

Hybrid GaN LED with capillary-bonded II–VI MQW color-converting membrane for visible light communications

International Nuclear Information System (INIS)

Santos, Joao M M; Jones, Brynmor E; Schlosser, Peter J; Herrnsdorf, Johannes; Guilhabert, Benoit; McKendry, Jonathan J D; Hastie, Jennifer E; Laurand, Nicolas; Dawson, Martin D; Watson, Scott; Kelly, Anthony E; De Jesus, Joel; Garcia, Thor A; Tamargo, Maria C

2015-01-01

The rapid emergence of gallium-nitride (GaN) light-emitting diodes (LEDs) for solid-state lighting has created a timely opportunity for optical communications using visible light. One important challenge to address this opportunity is to extend the wavelength coverage of GaN LEDs without compromising their modulation properties. Here, a hybrid source for emission at 540 nm consisting of a 450 nm GaN micro-sized LED (micro-LED) with a micron-thick ZnCdSe/ZnCdMgSe multi-quantum-well color-converting membrane is reported. The membrane is liquid-capillary-bonded directly onto the sapphire window of the micro-LED for full hybridization. At an injection current of 100 mA, the color-converted power was found to be 37 μW. At this same current, the −3 dB optical modulation bandwidth of the bare GaN and hybrid micro-LEDs were 79 and 51 MHz, respectively. The intrinsic bandwidth of the color-converting membrane was found to be power-density independent over the range of the micro-LED operation at 145 MHz, which corresponds to a mean carrier lifetime of 1.9 ns. (paper)

Red carbon dots-based phosphors for white light-emitting diodes with color rendering index of 92.

Science.gov (United States)

Zhai, Yuechen; Wang, Yi; Li, Di; Zhou, Ding; Jing, Pengtao; Shen, Dezhen; Qu, Songnan

2018-05-29

Exploration of solid-state efficient red emissive carbon dots (CDs) phosphors is strongly desired for the development of high performance CDs-based white light-emitting diodes (WLEDs). In this work, enhanced red emissive CDs-based phosphors with photoluminescence quantum yields (PLQYs) of 25% were prepared by embedding red emissive CDs (PLQYs of 23%) into polyvinyl pyrrolidone (PVP). Because of the protection of PVP, the phosphors could preserve strong luminescence under long-term UV excitation or being mixed with conventional packaging materials. By applying the red emissive phosphors as the color conversion layer, WLEDs with high color rendering index of 92 and color coordinate of (0.33, 0.33) are fabricated. Copyright © 2018 Elsevier Inc. All rights reserved.

Analytic formalism for current crowding in light emitting diodes

International Nuclear Information System (INIS)

Lee, Kyu-Seok

2012-01-01

This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of 670-nm Light-Emitting Diode Light On Neuronal Cultures

Science.gov (United States)

Wong-Riley, Margaret T. T.; Whelan, Harry T.

2002-01-01

Light close to and within the near infrared range has documented benefits for promoting wound healing in human and animal studies. Our preliminary results using light-emitting diodes (LEDs) in this range have also demonstrated two-to five-fold increases in growth-phase-specific DNA synthesis in normal fibroblasts, muscle cells, osteoblasts, and mucosal epithelial cells in tissue cultures. However, the mechanisms of action of such light on cells are poorly understood. We hypothesized that the therapeutic effects of such light result from the stimulation of cellular events associated with increases in cytochrome oxidase activity. As a first step in testing our hypothesis, we subjected primary neuronal cultures to impulse blockade by tetrodotoxin (TTX), a voltage-dependent sodium channel blocker, and applied LED light at 670 nm to determine if it could partially or fully reverse the reduction of cytochrome oxidase activity by TTX. The wavelength and parameters were previously tested to be beneficial for wound healing.

Color Shift Modeling of Light-Emitting Diode Lamps in Step-Loaded Stress Testing

NARCIS (Netherlands)

Cai, Miao; Yang, Daoguo; Huang, J.; Zhang, Maofen; Chen, Xianping; Liang, Caihang; Koh, S.W.; Zhang, G.Q.

2017-01-01

The color coordinate shift of light-emitting diode (LED) lamps is investigated by running three stress-loaded testing methods, namely step-up stress accelerated degradation testing, step-down stress accelerated degradation testing, and constant stress accelerated degradation testing. A power

Dr. Harry Whelan With the Light Emitting Diode Probe

Science.gov (United States)

1999-01-01

The red light from the Light Emitting Diode (LED) probe shines through the fingers of Dr. Harry Whelan, a pediatric neurologist at the Children's Hospital of Wisconsin in Milwaukee. Dr. Whelan uses the long waves of light from the LED surgical probe to activate special drugs that kill brain tumors. Laser light previously has been used for this type of surgery, but the LED light illuminates through all nearby tissues, reaching parts of tumors that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. Also, it can be used for hours at a time while still remaining cool to the touch. The probe was developed for photodynamic cancer therapy under a NASA Small Business Innovative Research Program grant. The program is part of NASA's Technology Transfer Department at the Marshall Space Flight Center.

Enhancing the Light-Extraction Efficiency of AlGaN Nanowires Ultraviolet Light-Emitting Diode by using Nitride/Air Distributed Bragg Reflector Nanogratings

KAUST Repository

Alias, Mohd Sharizal; Janjua, Bilal; Zhao, Chao; Priante, Davide; Alhamoud, Abdullah A.; Tangi, Malleswararao; Alanazi, Lafi M.; Alatawi, Abdullah A.; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

2017-01-01

The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.

Enhancing the Light-Extraction Efficiency of AlGaN Nanowires Ultraviolet Light-Emitting Diode by using Nitride/Air Distributed Bragg Reflector Nanogratings

KAUST Repository

Alias, Mohd Sharizal

2017-09-11

The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.

Improved power efficiency of blue fluorescent organic light-emitting diode with intermixed host structure

Energy Technology Data Exchange (ETDEWEB)

Yue, Shouzhen; Zhang, Shiming; Zhang, Zhensong; Wu, Yukun; Wang, Peng; Guo, Runda; Chen, Yu; Qu, Dalong; Wu, Qingyang; Zhao, Yi, E-mail: yizhao@jlu.edu.cn; Liu, Shiyong

2013-11-15

High power efficiency (PE) p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-ph) based fluorescent blue organic light-emitting diode (OLED) is demonstrated by utilizing intermixed host (IH) structure. The PE outperforms those devices based on single host (SH), mixed host (MH), and double emitting layers (DELs). By further optimizing the intermixed layer, peak PE of the IH device is increased up to 8.7 lm/W (1.7 times higher than conventional SH device), which is the highest value among the DSA-ph based blue device reported so far. -- Highlights: • DSA-ph based blue fluorescent OLEDs are fabricated. • The intermixed host structure is first introduced into the blue devices. • Blue device with the highest power efficiency based on DSA-ph is obtained.

A Simple, Small-Scale Lego Colorimeter with a Light-Emitting Diode (LED) Used as Detector

Science.gov (United States)

Asheim, Jonas; Kvittingen, Eivind V.; Kvittingen, Lise; Verley, Richard

2014-01-01

This article describes how to construct a simple, inexpensive, and robust colorimeter from a few Lego bricks, in which one light-emitting diode (LED) is used as a light source and a second LED as a light detector. The colorimeter is suited to various grades and curricula.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

KAUST Repository

Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Banavoth, Murali; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman

2016-01-01

A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

KAUST Repository

Pan, Jun

2016-08-16

A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

2014-06-09

The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

Manipulating the Local Light Emission in Organic Light-Emitting Diodes by using Patterned Self-Assembled Monolayers

NARCIS (Netherlands)

Mathijssen, S.G.J.; Hal, P.A. van; Biggelaar, T.J.M. van den; Smits, E.C.P.; Boer, B. de; Kemerink, M.; Janssen, R.A.J.; Leeuw, D.M. de

2008-01-01

In organic light-emitting diodes (OLEDs), interface dipoles play an important role in the process of charge injection from the metallic electrode into the active organic layer.[1,2] An oriented dipole layer changes the effective work function of the electrode because of its internal electric field.

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Lai Wang

2017-10-01

Full Text Available Efficiency droop in GaN-based light emitting diodes (LEDs under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed.

Highly efficient exciplex organic light-emitting diodes incorporating a heptazine derivative as an electron acceptor.

Science.gov (United States)