GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

Energy Technology Data Exchange (ETDEWEB)

Chernykh, S.V., E-mail: chsv_84@mail.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Chernykh, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Didenko, S.I.; Baryshnikov, F.M. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Burtebayev, N. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan); Britvich, G.I. [Institute of High Energy Physics, Protvino, Moscow region (Russian Federation); Chubenko, A.P. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Guly, V.G.; Glybin, Yu.N. [LLC “SNIIP Plus”, Moscow (Russian Federation); Zholdybayev, T.K.; Burtebayeva, J.T.; Nassurlla, M. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan)

2017-02-11

For the first time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm{sup 2} and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm{sup 2} detector) and 15.5 keV (for 80 mm{sup 2} detector) on the 5.499 MeV line of {sup 238}Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a fluctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. - Highlights: • VPE GaAs particle detectors with an active area of 25 and 80 mm{sup 2} were fabricated. • 120 Å ultra-thin Pt Schottky barrier was used as a rectifying contact. • The obtained FWHM of 14.2 keV ({sup 238}Pu) is at the level of Si spectrometric detectors. • Various components of the total energy resolution were analyzed. • It was shown that obtained energy resolution is close to its limit for VPE GaAs.

Imaging performance of a Timepix detector based on semi-insulating GaAs

Science.gov (United States)

Zaťko, B.; Zápražný, Z.; Jakůbek, J.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Korytár, D.; Nečas, V.; Žemlička, J.; Mora, Y.; Pichotka, M.

2018-01-01

This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 × 256 pixels with a pitch of 55 μm bump-bonded to a Timepix ASIC. The sensor was processed on a 350 μm-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a 241Am radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV γ-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 μm and accelerating voltage up to 80 kV. A 700 μm × 700 μm gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 μm.

Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors

CERN Document Server

Nava, F; Canali, C; Vittone, E; Polesello, P; Biggeri, U; Leroy, C

1999-01-01

The radiation damage in 100 mu m thick Schottky diodes made on semi-insulating undoped GaAs materials, were studied using alpha-, beta-, proton- and gamma-spectroscopy as well as I-V measurements. The results have been analysed within the framework of the Hecht model to investigate the influence of the plasma produced by short-range strongly ionising particles on the detector performance after 24 GeV proton irradiation. It has been found that with the mean free drift lengths for electrons and holes determined from alpha-spectra in overdepleted detectors, the charge collection efficiency for beta-particles, cce subbeta, is well predicted in the unirradiated detectors, while in the most irradiated ones, the cce subbeta is underestimated by more than 40%. The observed disagreement can be explained by assuming that the charge carrier recombination in the plasma region of such detectors, becomes significant.

Gamma radiation detectors for safeguards applications

International Nuclear Information System (INIS)

Carchon, R.; Moeslinger, M.; Bourva, L.; Bass, C.; Zendel, M.

2007-01-01

The IAEA uses extensively a variety of gamma radiation detectors to verify nuclear material. These detectors are part of standardized spectrometry systems: germanium detectors for High-Resolution Gamma Spectrometry (HRGS); Cadmium Zinc Telluride (CZT) detectors for Room Temperature Gamma Spectrometry (RTGS); and NaI(Tl) detectors for Low Resolution Gamma Spectrometry (LRGS). HRGS with high-purity Germanium (HpGe) detectors cooled by liquid nitrogen is widely used in nuclear safeguards to verify the isotopic composition of plutonium or uranium in non-irradiated material. Alternative cooling systems have been evaluated and electrically cooled HpGe detectors show a potential added value, especially for unattended measurements. The spectrometric performance of CZT detectors, their robustness and simplicity are key to the successful verification of irradiated materials. Further development, such as limiting the charge trapping effects in CZT to provide improved sensitivity and energy resolution are discussed. NaI(Tl) detectors have many applications-specifically in hand-held radioisotope identification devices (RID) which are used to detect the presence of radioactive material where a lower resolution is sufficient, as they benefit from a generally higher sensitivity. The Agency is also continuously involved in the review and evaluation of new and emerging technologies in the field of radiation detection such as: Peltier-cooled CdTe detectors; semiconductor detectors operating at room temperature such as HgI 2 and GaAs; and, scintillator detectors using glass fibres or LaBr 3 . A final conclusion, proposing recommendations for future action, is made

X-ray Imaging Using a Hybrid Photon Counting GaAs Pixel Detector

CERN Document Server

Schwarz, C; Göppert, R; Heijne, Erik H M; Ludwig, J; Meddeler, G; Mikulec, B; Pernigotti, E; Rogalla, M; Runge, K; Smith, K M; Snoeys, W; Söldner-Rembold, S; Watt, J

1999-01-01

The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprises a preamplifier, a discriminator with a 3-bit threshold adjust and a 15-bit counter. The detector is realized by an array of Schottky diodes processed on semi-insulating LEC-GaAs bulk material. An IV-charcteristic and a detector bias voltage scan showed that the detector can be operated with voltages around 200 V. Images of various objects were taken by using a standard X-ray tube for dental diagnostics. The signal to noise ratio (SNR) was also determined. The applications of these imaging systems range from medical applications like digital mammography or dental X-ray diagnostics to non destructive material testing (...

Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

2015-07-01

GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

Response of GaAs charge storage devices to transient ionizing radiation

Science.gov (United States)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Buriakov, A. M.; Bilyk, V. R.; Mishina, E. D. [Moscow Technological University “MIREA” (Russian Federation); Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Vasil’evskii, I. S. [National Research Nuclear University “MEPhI” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)

2017-04-15

The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

Transient radiation effects in GaAs semiconductor devices

International Nuclear Information System (INIS)

Chang, J.Y.; Stauber, M.; Ezzeddine, A.; Howard, J.W.; Constantine, A.G.; Becker, M.; Block, R.C.

1988-01-01

This paper describes an ongoing program to identify the response of GaAs devices to intense pulses of ionizing radiation. The program consists of experimental measurements at the Rensselaer Polytechnic Institute's RPI electron linear accelerator (Linac) on generic GaAs devices built by Grumman Tachonics Corporation and the analysis of these results through computer simulation with the circuit model code SPICE (including radiation effects incorporated in the variations TRISPICE and TRIGSPICE and the device model code PISCES IIB). The objective of this program is the observation of the basic response phenomena and the development of accurate simulation tools so that results of Linac irradiations tests can be understood and predicted

Radiation damages and electro-conductive characteristics of Neutron-Transmutation-Doped GaAs

Energy Technology Data Exchange (ETDEWEB)

Kuriyama, Kazuo; Sato, Masataka; Sakai, Kiyohiro [Hosei Univ., Koganei, Tokyo (Japan). Coll. of Engineering; Okada, Moritami

1996-04-01

Neutron Transmutation Doping (NTD) method made it possible to do homogeneous doping of impurities and to easily control the doping level. Thus, the method has been put into practice for some materials such as silicon. Here, the annealing behavior of anti-site defects generated in neutron-irradiated GaAs was studied. Electric activations of NTD-impurities were started around 550degC in P1 and P2 radiation fields, which were coincident with the beginning of extinction of electron trapping which was caused by anti-site defects due to fast neutron radiation. The electric resistivities of GaAs in neutron radiation fields; P1, P2 and P3 changed depending with the annealing temperature. The electric resistivities of GaAs in P1 and P2 fields indicate the presence of hopping conduction through radiation damages. The resistance of GaAs irradiated in P1 was smaller by nearly 2 orders than that of the untreated control. Further, the electric activation process for NTD-impurities was investigated using ESR and Raman spectroscopy. (M.N.)

Multielement X-ray row detector on GaAs with spatial resolution of 108 μm

International Nuclear Information System (INIS)

Dvoryankin, V.F.; Dikaev, Yu.M.; Krikunov, A.I.; Panova, T.M.; Telegin, A.A.

2004-01-01

The multielement X-ray row detector with pitch of 108 μm was made on epitaxial GaAs (p + -n-n'-n + ) structures by isotropic etching in solution HCl-KBrO 3 -H 2 O. Separation of signals from the near-by detectors is achieved by built-in guard ring on each pixel. The spatial response of the detectors was evaluated

Multielement X-ray row detector on GaAs with spatial resolution of 108 {mu}m

Energy Technology Data Exchange (ETDEWEB)

Dvoryankin, V.F.; Dikaev, Yu.M. E-mail: ymd289@ire216.msk.ru; Krikunov, A.I.; Panova, T.M.; Telegin, A.A

2004-09-21

The multielement X-ray row detector with pitch of 108 {mu}m was made on epitaxial GaAs (p{sup +}-n-n'-n{sup +}) structures by isotropic etching in solution HCl-KBrO{sub 3}-H{sub 2}O. Separation of signals from the near-by detectors is achieved by built-in guard ring on each pixel. The spatial response of the detectors was evaluated.

Characterization of a mammographic system based on single photon counting pixel arrays coupled to GaAs x-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Amendolia, S. R.; Bisogni, M. G.; Delogu, P.; Fantacci, M. E.; Paternoster, G.; Rosso, V.; Stefanini, A. [Str. Dip. di Matematica e Fisica dell' Universita di Sassari, Via Vienna 2, I-07100, Sassari (Italy) and Istituto Nazionale di Fisica Nucleare INFN Sezione di Pisa, Largo B. Pontecorvo 3, I-56127, Pisa (Italy); Dip. di Fisica ' ' E. Fermi' ' , Universita di Pisa, Largo B. Pontecorvo 3, I-56127, Pisa (Italy) and Istituto Nazionale di Fisica Nucleare INFN Sezione di Pisa, Largo B. Pontecorvo 3, I-56127, Pisa (Italy); Dip. di Fisica ' ' E. Fermi' ' , Universita di Pisa, Largo B. Pontecorvo 3, I-56127, Pisa (Italy); Dip. di Fisica ' ' E. Fermi' ' , Universita di Pisa, Largo B. Pontecorvo 3, I-56127, Pisa (Italy) and Istituto Nazionale di Fisica Nucleare INFN Sezione di Pisa, Largo B. Pontecorvo 3, I-56127, Pisa (Italy)

2009-04-15

The authors report on the imaging capabilities of a mammographic system demonstrator based on GaAs pixel detectors operating in single photon counting (SPC) mode. The system imaging performances have been assessed by means of the transfer functions: The modulation transfer function (MTF), the normalized noise power spectrum, and the detective quantum efficiency (DQE) have been measured following the guidelines of the IEC 62220-1-2 protocol. The transfer function analysis has shown the high spatial resolution capabilities of the GaAs detectors. The MTF calculated at the Nyquist frequency (2.94 cycles/mm) is indeed 60%. The DQE, measured with a standard mammographic beam setup (Mo/Mo, 28 kVp, with 4 mm Al added filter) and calculated at zero frequency, is 46%. Aiming to further improve the system's image quality, the authors investigate the DQE limiting factors and show that they are mainly related to system engineering. For example, the authors show that optimization of the image equalization procedure increases the DQE(0) up to 74%, which is better than the DQE(0) of most clinical mammographic systems. The authors show how the high detection efficiency of GaAs detectors and the noise discrimination associated with the SPC technology allow optimizing the image quality in mammography. In conclusion, the authors propose technological solutions to exploit to the utmost the potentiality of GaAs detectors coupled to SPC electronics.

Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons

International Nuclear Information System (INIS)

Fromme, B.; Baum, G.; Goeckel, D.; Raith, W.

1989-01-01

Circularly polarized light is emitted in radiative transitions of polarized electrons from the conduction to the valence band in GaAs or GaAs 1-x P x crystals. The degree of light polarization is directly related to the polarization of the conduction-band electrons at the instant of recombination and allows conclusions about the depolarization of electrons in the conduction band. The depolarization is caused by spin-relaxation processes. The efficiency of these processes depends on crystal type, crystal temperature, degree of doping, and kinetic energy of the electrons. Highly p-doped GaAs and GaAs 0.62 P 0.38 crystals (N A >1x10 19 atoms/cm 3 ) were bombarded with polarized electrons (initial polarization 38%), and the spectral distribution and the circular polarization of the emitted recombination radiation were measured. The initial kinetic energy of the electrons in the conduction band was varied between 5 and 1000 eV. The measurements of the spectral distribution show that the electrons are thermalized before recombination occurs, independent of their initial energy. An important thermalization process in this energy range is the excitation of crystal electrons by electron-hole pair creation. The circular polarization of the recombination radiation lies below 1% in the whole energy range. It decreases with increasing electron energy but is still of measurable magnitude at 100 eV in the case of GaAs 0.62 P 0.38 . The circular polarization is smaller for GaAs than for GaAs 0.62 P 0.38 , which we attribute to more efficient spin relaxation in GaAs

Mobility-lifetime product in epitaxial GaAs X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Sun, G.C. [GESEC R and D, Universite Pierre et Marie Curie, Bat.11, 140 rue de Lourmel, 75015 Paris (France)]. E-mail: guocsun@ccr.jussieu.fr; Zazoui, M. [LPMC, Faculte des Sciences et Techniques-Mohammedia, B.P. 146 Bd Hassan II, Mohammedia, Maroc (Morocco); Talbi, N. [Faculte des Sciences, Universite de Gabes, Route de Medenine, 6029 Gabes (Tunisia); Khirouni, K. [Faculte des Sciences, Universite de Gabes, Route de Medenine, 6029 Gabes (Tunisia); Bourgoin, J.C. [GESEC R and D, Universite Pierre et Marie Curie, Bat.11, 140 rue de Lourmel, 75015 Paris (France)

2007-04-01

Self-supported thick (200-500 {mu}m), non-intentionally doped, epitaxial GaAs layers are good candidates for X-ray imaging for the following reasons. Their electronic properties are homogeneous over large areas, they can be grown at low cost, the technology to realize pixel detectors of various size is standard, the defect concentration is low and the fluorescence yield is small. Here, we characterize the defects present in the material and evaluate the mobility-lifetime product, using Deep Level Transient Spectroscopy combined with current-voltage and charge collection measurements.

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Radiation detectors laboratory

International Nuclear Information System (INIS)

Ramirez J, F.J.

1996-01-01

The National Institute for Nuclear Research has established a Radiation detector laboratory that has the possibility of providing to the consultants on the handling and applications of the nuclear radiation detectors. It has special equipment to repair the radiation detectors used in spectroscopy as the hyper pure Germanium for gamma radiation and the Lithium-silica for X-rays. There are different facilities in the laboratory that can become useful for other institutions that use radiation detectors. This laboratory was created to satisfy consultant services, training and repairing of the radiation detectors both in national and regional levels for Latin America. The laboratory has the following sections: Nuclear Electronic Instrumentation; where there are all kind of instruments for the measurement and characterization of detectors like multichannel analyzers of pulse height, personal computers, amplifiers and nuclear pulse preamplifiers, nuclear pulses generator, aleatories, computer programs for radiation spectra analysis, etc. High vacuum; there is a vacuum escape measurer, two high vacuum pumps to restore the vacuum of detectors, so the corresponding measurers and the necessary tools. Detectors cleaning; there is an anaerobic chamber for the detectors handling at inert atmosphere, a smoke extraction bell for cleaning with the detector solvents. Cryogenic; there are vessels and tools for handling liquid nitrogen which is used for cooling the detectors when they required it. (Author)

Radiation-induced effects in GaAs thin-film optical (10.6 μm) waveguides

International Nuclear Information System (INIS)

Share, S.; Epstein, A.S.; Monse, T.; Chang, W.S.C.; Chang, M.S.

1976-01-01

Two types of GaAs thin-film optical waveguide structures operating at 10.6 μm were examined before and after exposure to neutron and γ irradiation. The attenuation rate of the GaAs/n + -GaAs structure was particularly sensitive to neutron irradiation of 10 13 cm -2 and exhibited postirradiation annealing at 150 0 C. This is in contrast to the relative neutron irradiation insensitivity of a GaAs/GaAs 1 /sub -//subx/P/subx//n + -GaAs structure. The effect of γ radiation is less pronounced for both structures. The radiation-induced changes are discussed in terms of free-carrier absorption, index of refraction, scattering centers, and absorption by complexes

Si and gaas pixel detectors for medical imaging applications

International Nuclear Information System (INIS)

Bisogni, M. G.

2001-01-01

As the use of digital radiographic equipment in the morphological imaging field is becoming the more and more diffuse, the research of new and more performing devices from public institutions and industrial companies is in constant progress. Most of these devices are based on solid-state detectors as X-ray sensors. Semiconductor pixel detectors, originally developed in the high energy physics environment, have been then proposed as digital detector for medical imaging applications. In this paper a digital single photon counting device, based on silicon and GaAs pixel detector, is presented. The detector is a thin slab of semiconductor crystal where an array of 64 by 64 square pixels, 170- m side, has been built on one side. The data read-out is performed by a VLSI integrated circuit named Photon Counting Chip (PCC), developed within the MEDIPIX collaboration. Each chip cell geometrically matches the sensor pixel. It contains a charge preamplifier, a threshold comparator and a 15 bits pseudo-random counter and it is coupled to the detector by means of bump bonding. Most important advantages of such system, with respect to a traditional X-rays film/screen device, are the wider linear dynamic range (3x104) and the higher performance in terms of MTF and DQE. Besides the single photon counting architecture allows to detect image contrasts lower than 3%. Electronics read-out performance as well as imaging capabilities of the digital device will be presented. Images of mammographic phantoms acquired with a standard Mammographic tube will be compared with radiographs obtained with traditional film/screen systems

Radiation detectors

International Nuclear Information System (INIS)

2013-01-01

This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

A 2-10 GHz GaAs MMIC opto-electronic phase detector for optical microwave signal generators

DEFF Research Database (Denmark)

Bruun, Marlene; Gliese, Ulrik Bo; Petersen, Anders Kongstad

1994-01-01

Optical transmission of microwave signals becomes increasingly important. Techniques using beat between optical carriers of semiconductor lasers are promising if efficient optical phase locked loops are realized. A highly efficient GaAs MMIC optoelectronic phase detector for a 2-10 GHz OPLL...

Radiation effects in pigtailed GaAs and GaA1As LEDs

International Nuclear Information System (INIS)

Barnes, C.E.

1981-06-01

Permanent and transient radiation effects have been studied in Plessey pigtailed, high radiance GaAs and GaAlAs LEDs using neutron, gamma ray and X-ray sources. The radiation-induced source of degradation in these devices was determined by also examining both bare, unpigtailed LEDs and separate samples of the Corning fibers used as pigtails. No transient effects were observed in the unpigtailed LEDs during either pulsed neutron or X-ray exposure. In contrast, the Corning doped silica fibers exhibited strong transient attenuation following pulsed X-ray bombardment. Permanent neutron damage in these pigtailed LEDs consisted essentially of light output degradation in the LED itself. Permanent gamma ray effects due to a Co-60 irradiation of 1 megarad were restricted to a small increase in attenuation in the fiber. The two primary radiation effects were then transient attenuation in the fiber pigtail and permanent neutron-induced degradation of the LED

The hard X-ray response of epitaxial GaAs detectors

CERN Document Server

Owens, A; Kraft, S; Peacock, A; Nenonen, S; Andersson, H

2000-01-01

We report on hard X-ray measurements with two epitaxial GaAs detectors of active areas 2.22 mm sup 2 and thicknesses 40 and 400 mu m at the ESRF and HASYLAB synchrotron research facilities. The detectors were fabricated using high-purity material and in spite of an order of magnitude difference in depletion depths, they were found to have comparable performances with energy resolutions at -45 deg. C of approx 1 keV fwhm at 7 keV rising to approx 2 keV fwhm at 200 keV and noise floors in the range 1-1.5 keV. At energies <30 keV, the energy resolution was dominated by leakage current and electromagnetic pick-up, while at the highest energies measured, the resolutions approach the expected Fano limit (e.g., approx 1 keV near 200 keV). Both detectors are remarkably linear, with average rms non-linearities of 0.2% over the energy range 10-60 keV, which, taken in conjunction with Monte-Carlo results indicate that charge collection efficiencies must be in excess of 98%. This is consistent with material science me...

Microwave frequency detector at X-band using GaAs MMIC technology

International Nuclear Information System (INIS)

Zhang Jun; Liao Xiaoping; Jiao Yongchang

2009-01-01

The design, fabrication, and experimental results of an MEMS microwave frequency detector are presented for the first time. The structure consists of a microwave power divider, two CPW transmission lines, a microwave power combiner, an MEMS capacitive power sensor and a thermopile. The detector has been designed and fabricated on GaAs substrate using the MMIC process at the X-band successfully. The MEMS capacitive power sensor is used for detecting the high power signal, while the thermopile is used for detecting the low power signal. Signals of 17 and 10 dBm are measured over the X-band. The sensitivity is 0.56 MHz/fF under 17 dBm by the capacitive power sensor, and 6.67 MHz/μV under 10 dBm by the thermopile, respectively. The validity of the presented design has been confirmed by the experiment.

Development and application of nuclear radiation detector made from high resistivity silicon and compound semiconductor

International Nuclear Information System (INIS)

Ding Honglin; Zhang Xiufeng; Zhang Wanchang; Li Jiang

1995-11-01

The development of high resistivity silicon detectors and compound semiconductor detectors as well as their application in nuclear medicine are described. It emphasizes on several key techniques in fabricating detectors in order to meet their application in nuclear medicine. As for a high resistivity silicon detector, its counting rate to 125 I 28.5 keV X-ray has to be improved. So employing a conic mesa structure can increase the thickness of samples, and can raise the electric field of collecting charges under the same bias voltage. As for a GaAs detector, its performance of collecting charges has to be improved. So the thicknesses of GaAs samples are decreased and proper thermal treatment to make Ni-Ge-Au ohmic contacts are employed. Applying a suitable reverse bias voltage can obtain a fully depleted detector, and can obtain a lower forward turn-on voltage and a thinner weak electric field region. After resolving these key techniques, the performance of GaAs detectors has been distinctly improved. The count rate to 125 I X-ray has increased by three or five times under the same testing condition and background circumstance (2 refs., 8 figs., 3 tabs.)

Application of GaAs and CdTe photoconductor detectors to x-ray flash radiography

International Nuclear Information System (INIS)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L.

1991-01-01

Semi-insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X ray single shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 μrad. The dynamic range was about 4 decades in amplitude or charges, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X ray generator monitoring with such detectors or with neutron preirradiated photoconductors

Application of GaAs and CdTe photoconductor detectors to X-ray flash radiography

International Nuclear Information System (INIS)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L.; Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M.

1992-01-01

Some insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X-ray single-shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 μrad. The dynamic range was about 4 decades in amplitude or charge, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X-ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X-ray generator monitoring with such detectors or with neutron preirradiated photoconductors. (orig.)

Application of GaAs and CdTe photoconductor detectors to X-ray flash radiography

Energy Technology Data Exchange (ETDEWEB)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L. (CEA, Direction des Technologies Avancees, Lab. d' Electronique, de Technologie et d' Instrumentation, DSYS, 38 - Grenoble (France)); Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M. (CEA, Direction des Applications Militaires, 77 - Courtry (France))

1992-11-15

Some insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X-ray single-shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 [mu]rad. The dynamic range was about 4 decades in amplitude or charge, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X-ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X-ray generator monitoring with such detectors or with neutron preirradiated photoconductors. (orig.).

Application of GaAs and CdTe photoconductor detectors to x-ray flash radiography

Energy Technology Data Exchange (ETDEWEB)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L. [CEA Centre d`Etudes de Grenoble, 38 (FR). Direction des Technologies Avancees; Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M. [CEA Centre d`Etudes de Vaujours, 77 - Courtry (FR)

1991-12-31

Semi-insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X ray single shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 {mu}rad. The dynamic range was about 4 decades in amplitude or charges, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X ray generator monitoring with such detectors or with neutron preirradiated photoconductors.

Nuclear radiation detectors

International Nuclear Information System (INIS)

Kapoor, S.S.; Ramamurthy, V.S.

1986-01-01

The present monograph is intended to treat the commonly used detectors in the field of nuclear physics covering important developments of the recent years. After a general introduction, a brief account of interaction of radiation with matter relevant to the processes in radiation detection is given in Chapter II. In addition to the ionization chamber, proportional counters and Geiger Mueller counters, several gas-filled detectors of advanced design such as those recently developed for heavy ion physics and other types of studies have been covered in Chapter III. Semiconductor detectors are dealt with in Chapter IV. The scintillation detectors which function by sensing the photons emitted by the luminescence process during the interaction of the impinging radiation with the scintillation detector medium are described in Chapter V. The topic of neutron detectors is covered in Chapter VI, as in this case the emphasis is more on the method of neutron detection rather than on detector type. Electronic instrumentation related to signal pulse processing dealt with in Chapter VII. The track etch detectors based on the visualization of the track of the impinging charge particle have also been briefly covered in the last chapter. The scope of this monograph is confined to detectors commonly used in low and medium energy nuclear physics research and applications of nuclear techniques. The monograph is intended for post-graduate students and those beginning to work with the radiation detectors. (author)

Radiation emitter-detector package

International Nuclear Information System (INIS)

O'Brien, J.T.; Limm, A.C.; Nyul, P.; Tassia, V.S. Jr.

1978-01-01

Mounted on the metallic base of a radiation emitter-detector is a mounting block is a first projection, and a second projection. A radiation detector is on the first projection and a semiconductor electroluminescent device, i.e., a radiation emitter, is on the second projection such that the plane of the recombination region of the electroluminescent device is perpendicular to the radiation incident surface of the radiation detector. The electroluminescent device has a primary emission and a secondary emission in a direction different from the primary emission. A radiation emitter-detector package as described is ideally suited to those applications wherein the secondary radiation of the electroluminescent device is fed into a feedback circuit regulating the biasing current of the electroluminescent device

Integration of Single-Photon Sources and Detectors on GaAs

Directory of Open Access Journals (Sweden)

Giulia Enrica Digeronimo

2016-10-01

Full Text Available Quantum photonic integrated circuits (QPICs on a GaAs platform allow the generation, manipulation, routing, and detection of non-classical states of light, which could pave the way for quantum information processing based on photons. In this article, the prototype of a multi-functional QPIC is presented together with our recent achievements in terms of nanofabrication and integration of each component of the circuit. Photons are generated by excited InAs quantum dots (QDs and routed through ridge waveguides towards photonic crystal cavities acting as filters. The filters with a transmission of 20% and free spectral range ≥66 nm are able to select a single excitonic line out of the complex emission spectra of the QDs. The QD luminescence can be measured by on-chip superconducting single photon detectors made of niobium nitride (NbN nanowires patterned on top of a suspended nanobeam, reaching a device quantum efficiency up to 28%. Moreover, two electrically independent detectors are integrated on top of the same nanobeam, resulting in a very compact autocorrelator for on-chip g(2(τ measurements.

Radiation detectors laboratory

International Nuclear Information System (INIS)

Ramirez J, F.J.

1997-01-01

The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

Spatial distribution of the X- and γ- rays induced energy deposition on semi-insulating GaAs:Cr based pixel radiation detector

International Nuclear Information System (INIS)

Meneses Gonzalez, Annie; Leyva Fabelo, Antonio; Pinnera Hernandez, Ibrahin; Cruz Inclan, Carlos M.; Abreu Alfonso, Yamiel; Chelkov, Georgy; Zhemchugov, Alexey

2015-01-01

Radiation detectors based on Cr compensated GaAs are characterized by high resistivity and good electron transport properties. These characteristics, its high atomic number and good radiation hardness, make GaAs:Cr a promising semiconductor detector within a wide photon energy range. The excellent imaging performance of these detectors for medical and other several applications are already reported in the literature. In this study, the spatial distributions of photon radiation energy deposition on a GaAs:Cr pixel detector with the real device dimensions (900 μm thick, pixels of 45x45 μm 2 and pitch of 55 μm) are presented. The charge carrier distribution profiles generated by the incident photons was additionally determined and discussed. Using the calculated weighting potential for the detector was possible to estimate the percent of charge carriers that shall contribute to the signal generated in the device electrodes. All the calculations were made for the typical photon energies of 241 Am and the energy corresponding to the K α1 characteristic lines of Mo. The MCNPX code system and ARCHIMEDES program were used for mathematical modeling of radiation transport in matter and for semiconductor device simulations respectively. (Author)

Evaluation of 320x240 pixel LEC GaAs Schottky barrier X-ray imaging arrays, hybridized to CMOS readout circuit based on charge integration

CERN Document Server

Irsigler, R; Alverbro, J; Borglind, J; Froejdh, C; Helander, P; Manolopoulos, S; O'Shea, V; Smith, K

1999-01-01

320x240 pixels GaAs Schottky barrier detector arrays were fabricated, hybridized to silicon readout circuits, and subsequently evaluated. The detector chip was based on semi-insulating LEC GaAs material. The square shaped pixel detector elements were of the Schottky barrier type and had a pitch of 38 mu m. The GaAs wafers were thinned down prior to the fabrication of the ohmic back contact. After dicing, the chips were indium bump, flip-chip bonded to CMOS readout circuits based on charge integration, and finally evaluated. A bias voltage between 50 and 100 V was sufficient to operate the detector. Results on I-V characteristics, noise behaviour and response to X-ray radiation are presented. Images of various objects and slit patterns were acquired by using a standard dental imaging X-ray source. The work done was a part of the XIMAGE project financed by the European Community (Brite-Euram). (author)

Self-powered radiation detector

International Nuclear Information System (INIS)

Playfoot, K.C.; Bauer, R.F.; Goldstein, N.P.

1980-01-01

This invention relates to a self powered radiation detector requiring no excitation potential to generate a signal indicating a radiation flux. Such detectors comprise two electrically insulated electrodes, at a distance from each other. These electrodes are made of conducting materials having a different response for neutron and/or gamma ray radiation flux levels, as in nuclear power stations. This elongated detector generates an electric signal in terms of an incident flux of radiations cooperating with coaxial conductors insulated from each other and with different radiation reaction characteristics. The conductor with the greatest reaction to the radiations forms the central emitting electrode and the conductor with the least reaction to the radiations forms a tubular coaxial collecting electrode. The rhodium or cobalt tubular emitting electrode contains a ductile central conducting cable placed along the longitudinal axis of the detector. The latter is in high nickel steel with a low reaction to radiation [fr

Foam radiators for transition radiation detectors

International Nuclear Information System (INIS)

Chernyatin, V.; Dolgoshein, B.; Gavrilenko, I.; Potekhin, M.; Romaniouk, A.; Sosnovtsev, V.

1993-01-01

A wide variety of foam radiators, potentially useful in the design of a transition radiation detector, the possible particle identification tool in collider experiments, have been tested in the beam. Various characteristics of these radiators are compared, and the conclusion is reached that certain brands of polyethylene foam are best suited for use in the detector. Comparison is made with a 'traditional' radiator, which is a periodic structure of plastic foils. (orig.)

Search for ArGa structures for development of coordinate-sensitive detectors

International Nuclear Information System (INIS)

Vorob'ev, A.P.; Sergeev, V.A.; Smol', A.V.

1991-01-01

GaAs samples have been investigated with the view to estimate the possibilities to use them in the coordinate detectors. As a result of the analysis of β-radiation spectra the samples of the π-ν-n-structure, whose signal spectrum from minimal ionizing particle is reliably singled out from the noise spectrum, have been chosen. The mechanism of signal forming in such structure has been considered. It has been concluded that π-ν-n-structure on the basis of the compensated GaAs is very promising as far as the construction of the coordinate sensitive detectors is concerned. 9 refs.; 15 figs

Advanced Space Radiation Detector Technology Development

Science.gov (United States)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

2013-01-01

The advanced space radiation detector development team at the NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

Silicon radiation detectors

International Nuclear Information System (INIS)

Lutz, G.

1995-01-01

An introduction to and an overview of function principles and properties of semiconductor radiation detectors is attempted. The paper is addressed to people interested in detector development but not already experts in the field of semiconductor detectors. (orig.)

Radiation detectors laboratory; Laboratorio de detectores de radiacion

Energy Technology Data Exchange (ETDEWEB)

Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

1997-07-01

The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

A GaAs pixel detectors-based digital mammographic system: Performances and imaging tests results

International Nuclear Information System (INIS)

Annovazzi, A.; Amendolia, S.R.; Bigongiari, A.; Bisogni, M.G.; Catarsi, F.; Cesqui, F.; Cetronio, A.; Colombo, F.; Delogu, P.; Fantacci, M.E.; Gilberti, A.; Lanzieri, C.; Lavagna, S.; Novelli, M.; Passuello, G.; Paternoster, G.; Pieracci, M.; Poletti, M.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Testa, A.; Venturelli, L.

2007-01-01

The prototype presented in this paper is based on GaAs pixel detectors read-out by the PCC/MEDIPIX I circuit. The active area of a sensor is about 1 cm 2 therefore to cover the typical irradiation field used in mammography (18x24 cm 2 ), 18 GaAs detection units have been organized in two staggered rows of nine chips each and moved by a stepper motor in the orthogonal direction. The system is integrated in a mammographic equipment which comprehends the X-ray tube, the bias and data acquisition systems and the PC-based control system. The prototype has been developed in the framework of the Integrated Mammographic Imaging (IMI) project, an industrial research activity aiming to develop innovative instrumentation for morphologic and functional imaging. The project has been supported by the Italian Ministry of Education, University and Research (MIUR) and by five Italian High Tech companies, Alenia Marconi Systems (AMS), CAEN, Gilardoni, LABEN and Poli.Hi.Tech., in collaboration with the universities of Ferrara, Roma 'La Sapienza', Pisa and the Istituto Nazionale di Fisica Nucleare (INFN). In this paper, we report on the electrical characterization and the first imaging test results of the digital mammographic system. To assess the imaging capability of such a detector we have built a phantom, which simulates the breast tissue with malignancies. The radiographs of the phantom, obtained by delivering an entrance dose of 4.8 mGy, have shown particulars with a measured contrast below 1%

A GaAs pixel detectors-based digital mammographic system: Performances and imaging tests results

Science.gov (United States)

Annovazzi, A.; Amendolia, S. R.; Bigongiari, A.; Bisogni, M. G.; Catarsi, F.; Cesqui, F.; Cetronio, A.; Colombo, F.; Delogu, P.; Fantacci, M. E.; Gilberti, A.; Lanzieri, C.; Lavagna, S.; Novelli, M.; Passuello, G.; Paternoster, G.; Pieracci, M.; Poletti, M.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Testa, A.; Venturelli, L.

2007-06-01

The prototype presented in this paper is based on GaAs pixel detectors read-out by the PCC/MEDIPIX I circuit. The active area of a sensor is about 1 cm 2 therefore to cover the typical irradiation field used in mammography (18×24 cm 2), 18 GaAs detection units have been organized in two staggered rows of nine chips each and moved by a stepper motor in the orthogonal direction. The system is integrated in a mammographic equipment which comprehends the X-ray tube, the bias and data acquisition systems and the PC-based control system. The prototype has been developed in the framework of the Integrated Mammographic Imaging (IMI) project, an industrial research activity aiming to develop innovative instrumentation for morphologic and functional imaging. The project has been supported by the Italian Ministry of Education, University and Research (MIUR) and by five Italian High Tech companies, Alenia Marconi Systems (AMS), CAEN, Gilardoni, LABEN and Poli.Hi.Tech., in collaboration with the universities of Ferrara, Roma "La Sapienza", Pisa and the Istituto Nazionale di Fisica Nucleare (INFN). In this paper, we report on the electrical characterization and the first imaging test results of the digital mammographic system. To assess the imaging capability of such a detector we have built a phantom, which simulates the breast tissue with malignancies. The radiographs of the phantom, obtained by delivering an entrance dose of 4.8 mGy, have shown particulars with a measured contrast below 1%.

Basic Radiation Detectors. Chapter 6

Energy Technology Data Exchange (ETDEWEB)

Van Eijk, C. W.E. [Faculty of Applied Sciences, Delft University of Technology, Delft (Netherlands)

2014-12-15

Radiation detectors are of paramount importance in nuclear medicine. The detectors provide a wide range of information including the radiation dose of a laboratory worker and the positron emission tomography (PET) image of a patient. Consequently, detectors with strongly differing specifications are used. In this chapter, general aspects of detectors are discussed.

Ultrafast photoconductor detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

1987-01-01

We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

A GaAs pixel detectors-based digital mammographic system: Performances and imaging tests results

Energy Technology Data Exchange (ETDEWEB)

Annovazzi, A. [LABEN S.p.A., Vimodrone-Milan (Italy); Amendolia, S.R. [Str. Dip. di Matematica e Fisica dell' Universita, Sassari and Sezione I.N.F.N., Pisa (Italy); Bigongiari, A. [CAEN S.p.A., Viareggio-Lucca (Italy); Bisogni, M.G. [Dipartimento di Fisica ' E. Fermi' dell' Universita and Sezione I.N.F.N., Pisa (Italy); Catarsi, F. [CAEN S.p.A., Viareggio-Lucca (Italy); Cesqui, F. [AMS S.p.A, Rome (Italy); Cetronio, A. [AMS S.p.A, Rome (Italy); Colombo, F. [LABEN S.p.A., Vimodrone-Milan (Italy); Delogu, P. [Dipartimento di Fisica ' E. Fermi' dell' Universita and Sezione I.N.F.N., Pisa (Italy); Fantacci, M.E. [Dipartimento di Fisica ' E. Fermi' dell' Universita and Sezione I.N.F.N., Pisa (Italy); Gilberti, A. [LABEN S.p.A., Vimodrone-Milan (Italy); Lanzieri, C. [AMS S.p.A, Rome (Italy); Lavagna, S. [AMS S.p.A, Rome (Italy); Novelli, M. [Dipartimento di Fisica ' E. Fermi' dell' Universita and Sezione I.N.F.N., Pisa (Italy); Passuello, G. [CAEN S.p.A., Viareggio-Lucca (Italy); Paternoster, G. [Dipartimento di Fisica ' E. Fermi' dell' Universita and Sezione I.N.F.N., Pisa (Italy); Pieracci, M. [CAEN S.p.A., Viareggio-Lucca (Italy); Poletti, M. [LABEN S.p.A., Vimodrone-Milan (Italy); Quattrocchi, M. [Dipartimento di Fisica ' E. Fermi' dell' Universita and Sezione I.N.F.N., Pisa (Italy); Rosso, V. [Dipartimento di Fisica ' E. Fermi' dell' Universita and Sezione I.N.F.N., Pisa (Italy); Stefanini, A. [Dipartimento di Fisica ' E. Fermi' dell' Universita and Sezione I.N.F.N., Pisa (Italy)]. E-mail: arnaldo.stefanini@pi.infn.it; Testa, A. [CAEN S.p.A., Viareggio-Lucca (Italy); Venturelli, L. [AMS S.p.A, Rome (Italy)

2007-06-11

The prototype presented in this paper is based on GaAs pixel detectors read-out by the PCC/MEDIPIX I circuit. The active area of a sensor is about 1 cm{sup 2} therefore to cover the typical irradiation field used in mammography (18x24 cm{sup 2}), 18 GaAs detection units have been organized in two staggered rows of nine chips each and moved by a stepper motor in the orthogonal direction. The system is integrated in a mammographic equipment which comprehends the X-ray tube, the bias and data acquisition systems and the PC-based control system. The prototype has been developed in the framework of the Integrated Mammographic Imaging (IMI) project, an industrial research activity aiming to develop innovative instrumentation for morphologic and functional imaging. The project has been supported by the Italian Ministry of Education, University and Research (MIUR) and by five Italian High Tech companies, Alenia Marconi Systems (AMS), CAEN, Gilardoni, LABEN and Poli.Hi.Tech., in collaboration with the universities of Ferrara, Roma 'La Sapienza', Pisa and the Istituto Nazionale di Fisica Nucleare (INFN). In this paper, we report on the electrical characterization and the first imaging test results of the digital mammographic system. To assess the imaging capability of such a detector we have built a phantom, which simulates the breast tissue with malignancies. The radiographs of the phantom, obtained by delivering an entrance dose of 4.8 mGy, have shown particulars with a measured contrast below 1%.

Solid state radiation detector system

International Nuclear Information System (INIS)

1977-01-01

A solid state radiation flux detector system utilizes a detector element, consisting of a bar of semiconductor having electrical conductance of magnitude dependent upon the magnitude of photon and charged particle flux impinging thereon, and negative feedback circuitry for adjusting the current flow through a light emitting diode to facilitate the addition of optical flux, having a magnitude decreasing in proportion to any increase in the magnitude of radiation (e.g. x-ray) flux incident upon the detector element, whereby the conductance of the detector element is maintained essentially constant. The light emitting diode also illuminates a photodiode to generate a detector output having a stable, highly linear response with time and incident radiation flux changes

Superlattice electroabsorption radiation detector

International Nuclear Information System (INIS)

Cooke, B.J.

1993-06-01

This paper provides a preliminary investigation of a new class of superlattice electroabsorption radiation detectors that employ direct optical modulation for high-speed, two-dimensional (2-D), high-resolution imaging. Applications for the detector include nuclear radiation measurements, tactical guidance and detection (laser radar), inertial fusion plasma studies, and satellite-based sensors. Initial calculations discussed in this paper indicate that a 1.5-μm (GaAlAs) multi-quantum-well (MQW) Fabry-Perot detector can respond directly to radiation of energies 1 eV to 10 KeV, and indirectly (with scattering targets) up through gamma, with 2-D sample rates on the order of 20 ps

Workshops on radiation imaging detectors

International Nuclear Information System (INIS)

Sochinskii, N.V.; Sun, G.C.; Kostamo, P.; Silenas, A.; Saynatjoki, A.; Grant, J.; Owens, A.; Kozorezov, A.G.; Noschis, E.; Van Eijk, C.; Nagarkar, V.; Sekiya, H.; Pribat, D.; Campbell, M.; Lundgren, J.; Arques, M.; Gabrielli, A.; Padmore, H.; Maiorino, M.; Volpert, M.; Lebrun, F.; Van der Putten, S.; Pickford, A.; Barnsley, R.; Anton, M.E.G.; Mitschke, M.; Gros d'Aillon, E.; Frojdh, C.; Norlin, B.; Marchal, J.; Quattrocchi, M.; Stohr, U.; Bethke, K.; Bronnimann, C.H.; Pouvesle, J.M.; Hoheisel, M.; Clemens, J.C.; Gallin-Martel, M.L.; Bergamaschi, A.; Redondo-Fernandez, I.; Gal, O.; Kwiatowski, K.; Montesi, M.C.; Smith, K.

2005-01-01

This document gathers the transparencies that were presented at the international workshop on radiation imaging detectors. 9 sessions were organized: 1) materials for detectors and detector structure, 2) front end electronics, 3) interconnected technologies, 4) space, fusion applications, 5) the physics of detection, 6) industrial applications, 7) synchrotron radiation, 8) X-ray sources, and 9) medical and other applications

Workshops on radiation imaging detectors

Energy Technology Data Exchange (ETDEWEB)

Sochinskii, N V; Sun, G C; Kostamo, P; Silenas, A; Saynatjoki, A; Grant, J; Owens, A; Kozorezov, A G; Noschis, E; Van Eijk, C; Nagarkar, V; Sekiya, H; Pribat, D; Campbell, M; Lundgren, J; Arques, M; Gabrielli, A; Padmore, H; Maiorino, M; Volpert, M; Lebrun, F; Van der Putten, S; Pickford, A; Barnsley, R; Anton, M E.G.; Mitschke, M; Gros d' Aillon, E; Frojdh, C; Norlin, B; Marchal, J; Quattrocchi, M; Stohr, U; Bethke, K; Bronnimann, C H; Pouvesle, J M; Hoheisel, M; Clemens, J C; Gallin-Martel, M L; Bergamaschi, A; Redondo-Fernandez, I; Gal, O; Kwiatowski, K; Montesi, M C; Smith, K

2005-07-01

This document gathers the transparencies that were presented at the international workshop on radiation imaging detectors. 9 sessions were organized: 1) materials for detectors and detector structure, 2) front end electronics, 3) interconnected technologies, 4) space, fusion applications, 5) the physics of detection, 6) industrial applications, 7) synchrotron radiation, 8) X-ray sources, and 9) medical and other applications.

Self-powered radiation detectors

International Nuclear Information System (INIS)

Goldstein, N.P.; Todt, W.H.

1982-01-01

A self-powered nuclear radiation detector has an emitter electrode of an alloy of a first major constituent metal having a desired high radiation response, and a second minor constituent which imparts to the alloy a desired thermal or mechanical characteristic without diminishing the desired high radiation response. A gamma responsive self-powered detector is detailed which has an emitter with lead as the major constituent, with the minor constituent selected from aluminum, copper, nickel, platinum, or zinc. (author)

Status of radiation detector and neutron monitor technology

CERN Document Server

Kim, Y K; Ha, J H; Han, S H; Hong, S B; Hwang, I K; Lee, W G; Moon, B S; Park, S H; Song, M H

2002-01-01

In this report, we describe the current states of the radiation detection technology, detectors for industrial application, and neutron monitors. We also survey the new technologies being applied to this field. The method to detect radiation is the measurement of the observable secondary effect from the interaction between incident radiation and detector material, such as ionization, excitation, fluorescence, and chemical reaction. The radiation detectors can be categorized into gas detectors, scintillation detectors, and semiconductor detectors according to major effects and main applications. This report contains the current status and operational principles of these detectors. The application fields of radiation detectors are industrial measurement system, in-core neutron monitor, medical radiation diagnostic device, nondestructive inspection device, environmental radiation monitoring, cosmic-ray measurement, security system, fundamental science experiment, and radiation measurement standardization. The st...

Radiation detector

International Nuclear Information System (INIS)

Gillies, W.

1980-01-01

The radiation detector for measuring e.g. a neutron flux consists of a central emitter, an insulating shell arranged around it, and a tube-shaped collector enclosing both. The emitter itself is composed of a great number of stranded, spiral wires of small diameter giving a defined flexibility to the detector. For emitter material Pt, Rh, V, Co, Ce, Os or Ta may be used. (DG) [de

Ionizing radiation detector

Science.gov (United States)

Thacker, Louis H.

1990-01-01

An ionizing radiation detector is provided which is based on the principle of analog electronic integration of radiation sensor currents in the sub-pico to nano ampere range between fixed voltage switching thresholds with automatic voltage reversal each time the appropriate threshold is reached. The thresholds are provided by a first NAND gate Schmitt trigger which is coupled with a second NAND gate Schmitt trigger operating in an alternate switching state from the first gate to turn either a visible or audible indicating device on and off in response to the gate switching rate which is indicative of the level of radiation being sensed. The detector can be configured as a small, personal radiation dosimeter which is simple to operate and responsive over a dynamic range of at least 0.01 to 1000 R/hr.

Electret radiation detector

International Nuclear Information System (INIS)

Kubu, M.

1981-01-01

The electret radiation detector consists of 30 to 35% of bee wax and of 65 to 70% of colophony. It is mainly the induction conductivity of charo.es between the dipoles in the electret which is used for detection. In the manufacture of the detector, the average atomic number of the electret can be altered by adding various compounds, such as ZnO, which also increases efficiency for gamma radiation. An alpha or beta emitter can also be built-in in the electret. (B.S.)

Semiconductor ionizino. radiation detectors

International Nuclear Information System (INIS)

1982-01-01

Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

Ultrafast photoconductive detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

1987-01-01

The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

Radiation detectors based by polymer materials

International Nuclear Information System (INIS)

Cherestes, Margareta; Cherestes, Codrut; Constantinescu, Livia

2004-01-01

Scintillation counters make use of the property of certain chemical compounds to emit short light pulses after excitation produced by the passage of charged particles or photons of high energy. These flashes of light are detected by a photomultiplier tube that converts the photons into a voltage pulse. The light emitted from the detector also can be collected, focussed and dispersed by a CCD detector. The study of the evolution of the light emission and of the radiation damage under irradiation is a primary topic in the development of radiation hard polymer based scintillator. Polymer scintillator thin films are used in monitoring radiation beam intensities and simultaneous counting of different radiations. Radiation detectors have characteristics which depend on: the type of radiation, the energy of radiation, and the material of the detector. Three types of polymer thin films were studied: a polyvinyltoluene based scintillator, fluorinated polyimide and PMMA. (authors)

Influence of substrate on the performances of semi-insulating GaAs detectors

CERN Document Server

Baldini, R; Nava, F; Canali, C; Lanzieri, C

2000-01-01

A study of the carrier transport mechanism, the charge collection efficiency and the energy resolution has been carried out on semi-insulating GaAs X-ray detectors realised on substrates with concentrations of acceptor dopants N sub a , varying from 10 sup 1 sup 4 to 10 sup 1 sup 7 cm sup - sup 3. The electron collection efficiency (ECE) and the reverse current were found to decrease with increasing N sub a , while the resistivity of the material was found to increase. At room temperature, the best collection efficiency (95%) and the best energy resolution (13.7 keV FWHM) for 59.5 keV X-rays of the sup 2 sup 4 sup 1 Am source, have been achieved with the less doped detectors (N sub a approx 10 sup 1 sup 4 cm sup - sup 3). The concentrations of ionised EL2 sup + , determined by optical measurements in IR regions, was shown to increase with N sub a and to be quasi-inversely proportional to the ECE values. This behaviour strongly supports the hypothesis that the EL2 defects play a main role in the compensation o...

Intrinsic radiation tolerance of ultra-thin GaAs solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirst, L. C.; Yakes, M. K.; Warner, J. H.; Schmieder, K. J.; Walters, R. J.; Jenkins, P. P. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW., Washington, D.C. 20375 (United States); Bennett, M. F. [Sotera Defense Solutions, Inc., Annapolis Junction, Maryland 20701-1067 (United States)

2016-07-18

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.

Diamond radiation detectors II. CVD diamond development for radiation detectors

International Nuclear Information System (INIS)

Kania, D.R.

1997-01-01

Interest in radiation detectors has supplied some of the impetus for improving the electronic properties of CVD diamond. In the present discussion, we will restrict our attention to polycrystalhne CVD material. We will focus on the evolution of these materials over the past decade and the correlation of detector performance with other properties of the material

Tritium-Powered Radiation Sensor Network

Science.gov (United States)

2015-09-01

Photomultiplier Tube, Scintillator, Geiger counter, Zigbee, Wireless Network, Radiation detector, Dirty Bomb 16. SECURITY CLASSIFICATION OF: 17...operational lifetime of 150 years. Persistent sensing of the environment with vibration and radiation (electromagnetic [ EM ], acoustic, gamma, etc.) in...Transportation E-field electric field EH electron-hole EM electromagnetic GaAs gallium arsenide GPS global positioning system InGaP indium gallium

Radiation energy detector and analyzer

International Nuclear Information System (INIS)

Roberts, T.G.

1981-01-01

A radiation detector array and a method for measuring the spectral content of radiation. The radiation sensor or detector is an array or stack of thin solid-electrolyte batteries. The batteries, arranged in a stack, may be composed of independent battery cells or may be arranged so that adjacent cells share a common terminal surface. This common surface is possible since the polarity of the batteries with respect to an adjacent battery is unrestricted, allowing a reduction in component parts of the assembly and reducing the overall stack length. Additionally, a test jig or chamber for allowing rapid measurement of the voltage across each battery is disclosed. A multichannel recorder and display may be used to indicate the voltage gradient change across the cells, or a small computer may be used for rapidly converting these voltage readings to a graph of radiation intensity versus wavelength or energy. The behavior of the batteries when used as a radiation detector and analyzer are such that the voltage measurements can be made at leisure after the detector array has been exposed to the radiation, and it is not necessary to make rapid measurements as is now done

Radiation damage in silicon detectors

CERN Document Server

Lindström, G

2003-01-01

Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

Electron transport in nanometer GaAs structure under radiation exposure

CERN Document Server

Demarina, N V

2002-01-01

One investigates into effect of neutron and proton irradiation on electron transport in nanometer GaAs structures. Mathematical model takes account of radiation defects via introduction of additional mechanisms od scattering of carriers at point defects and disordered regions. To investigate experimentally into volt-ampere and volt-farad characteristics one used a structure based on a field-effect transistor with the Schottky gate and a built-in channel. Calculation results of electron mobility, drift rate of electrons, time of energy relaxation and electron pulse are compared with the experimental data

Ionizing radiation detector using multimode optical fibers

International Nuclear Information System (INIS)

Suter, J.J.; Poret, J.C.; Rosen, M.; Rifkind, J.M.

1993-01-01

An optical ionizing radiation detector, based on the attenuation of 850-nm light in 50/125-μm multimode fibers, is described. The detector is especially well suited for application on spacecraft because of its small design. The detection element consists of a section of coiled fibers that has been designed to strip higher-order optical modes. Cylindrical radiation shields with atomic numbers ranging from Z = 13 (aluminum too) Z = 82 (lead) were placed around the ionizing radiation detector so that the effectiveness of the detector could be measured. By exposing the shields and the detector to 1.25-MeV cobalt 60 radiation, the mass attenuation coefficients of the shields were measured. The detector is based on the phenomenon that radiation creates optical color centers in glass fibers. Electron spin resonance spectroscopy performed on the 50/125-μm fibers showed the presence of germanium oxide and phosphorus-based color centers. The intensity of these centers is directly related to the accumulated gamma radiation

Amorphous silicon radiation detectors

Science.gov (United States)

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Property of the diamond radiation detector

International Nuclear Information System (INIS)

Sochor, V.; Cechak, T.; Sopko, B.

2008-01-01

The outstanding properties of diamond, such as radiation hardness, high carrier mobility, high band gap and breakdown field, distinguish it as a good candidate for radiation detectors. In the dosimetry for radiotherapy is permanently searched the detector with high sensitivity, high stability, linear dependence of the response, small size, tissue equivalent material and fast response, for the measuring of the temporal and space variations of the dose. The diamond detector properties as high sensitivity, good spatial and temporal resolution, low Leakage currents, low capacitance, possibility to fabricate robust and compact device and high temperature operation make it possible to use these detectors in many fields from high energy physics till radiation monitoring, from Medical therapy dosimetry till synchrotron radiation measurement. (authors)

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Signal processing for radiation detectors

CERN Document Server

Nakhostin, Mohammad

2018-01-01

This book provides a clear understanding of the principles of signal processing of radiation detectors. It puts great emphasis on the characteristics of pulses from various types of detectors and offers a full overview on the basic concepts required to understand detector signal processing systems and pulse processing techniques. Signal Processing for Radiation Detectors covers all of the important aspects of signal processing, including energy spectroscopy, timing measurements, position-sensing, pulse-shape discrimination, and radiation intensity measurement. The book encompasses a wide range of applications so that readers from different disciplines can benefit from all of the information. In addition, this resource: * Describes both analog and digital techniques of signal processing * Presents a complete compilation of digital pulse processing algorithms * Extrapolates content from more than 700 references covering classic papers as well as those of today * Demonstrates concepts with more than 340 origin...

The Use of Radiation Detectors in Medicine: Radiation Detectors for Morphological Imaging (1/3)

CERN Multimedia

CERN. Geneva

2009-01-01

The development of radiation detectors in the field of nuclear and particle physics has had a terrific impact in medical imaging since this latter discipline took off in late ’70 with the invention of the CT scanners. The massive use in High Energy Physics of position sensitive gas detectors, of high Z and high density scintillators coupled to Photomultiplier (PMT) and Position Sensitive Photomultipliers (PSPMT), and of solid state detectors has triggered during the last 30 years a series of novel applications in Medical Imaging with ionizing radiation. The accelerated scientific progression in genetics and molecular biology has finally generated what it is now called Molecular Imaging. This field of research presents additional challenges not only in the technology of radiation detector, but more and more in the ASIC electronics, fast digital readout and parallel software. In this series of three lectures I will try to present how high energy physics and medical imaging development have both benefited by t...

The Use of Radiation Detectors in Medicine: Radiation Detectors for Functional Imaging (2/3)

CERN Multimedia

CERN. Geneva

2009-01-01

The development of radiation detectors in the field of nuclear and particle physics has had a terrific impact in medical imaging since this latter discipline took off in late ’70 with the invention of the CT scanners. The massive use in High Energy Physics of position sensitive gas detectors, of high Z and high density scintillators coupled to Photomultiplier (PMT) and Position Sensitive Photomultipliers (PSPMT), and of solid state detectors has triggered during the last 30 years a series of novel applications in Medical Imaging with ionizing radiation. The accelerated scientific progression in genetics and molecular biology has finally generated what it is now called Molecular Imaging. This field of research presents additional challenges not only in the technology of radiation detector, but more and more in the ASIC electronics, fast digital readout and parallel software. In this series of three lectures I will try to present how high energy physics and medical imaging development have both benefited by t...

Semiconductor radiation detector

Science.gov (United States)

Bell, Zane W.; Burger, Arnold

2010-03-30

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Semiconductor radiation detectors. Device physics

International Nuclear Information System (INIS)

Lutz, G.

2007-01-01

Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased sup 1 sup 0 B-coated high-purity epitaxial GaAs thermal neutron detectors

CERN Document Server

Gersch, H K; Simpson, P A

2002-01-01

High-purity epitaxial GaAs sup 1 sup 0 B-coated thermal neutron detectors advantageously operate at room temperature without externally applied voltage. Sample detectors were systematically irradiated at fixed grid locations near the core of a 2 MW research reactor to determine their operational neutron dose threshold. Reactor pool locations were assigned so that fast and thermal neutron fluxes to the devices were similar. Neutron fluences ranged between 10 sup 1 sup 1 and 10 sup 1 sup 4 n/cm sup 2. GaAs detectors were exposed to exponential fluences of base ten. Ten detector designs were irradiated and studied, differentiated between p-i-n diodes and Schottky barrier diodes. The irradiated sup 1 sup 0 B-coated detectors were tested for neutron detection sensitivity in a thermalized neutron beam. Little damage was observed for detectors irradiated at neutron fluences of 10 sup 1 sup 2 n/cm sup 2 and below, but signals noticeably degraded at fluences of 10 sup 1 sup 3 n/cm sup 2. Catastrophic damage was appare...

Detector for atomic particles and ionizing radiations

International Nuclear Information System (INIS)

Mallet, Georges; Ythier, Christian.

1976-01-01

The aim of this invention is to provide improved detectors of atomic particles and of ionising radiations, having maximum sensitivity, by virtually suppressing all absorption of the radiation scattered by the main detector, so that these detectors are particularly suitable for fitting to anti-Compton spectrometers. Reference is particularly made to detectors of the Ge(Li) type, lithium compensated germanium, which are the most used. It is however made clear that this choice is not restrictive and that this invention not only applies to all known types of detectors and particularly to scintillator detectors, for instance to detectors such as NaI (Tl), composed of a monocrystal of a thallium activated alkaline halogenide, but also to gas, ionisation chamber and luminescent chamber type detectors and in general to all the known devices that convert the energy of particles into electric signals. Owing to the fact that the walls of the enclosure containing the main detector are composed, in the part around this detector, of an auxiliary detector, the latter detects virtually all the radiations scattered by the main detector. It does so without any loss due to the absorption of these radiations (a) by the metal walls of the enclosure usually containing the main detector and (b) by the walls of the auxiliary detector casing. It results from this that the detectors of the invention enable coincidence or anti-coincidence spectrometers with a very high performance to be made [fr

Silicon radiation detector

International Nuclear Information System (INIS)

Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

1992-01-01

The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

Energy Technology Data Exchange (ETDEWEB)

Boardman, D

2002-01-01

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

International Nuclear Information System (INIS)

Boardman, D.

2002-01-01

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

Development of leak detector by radiation. 2

International Nuclear Information System (INIS)

Suzuki, Takashi; Okano, Yasuhiro; Chisaka, Haruo

1997-01-01

Leak detector by radiation has been developed by cooperative research between Water Authority and us. In his fiscal year, the most suitable arrangement of detector system was simulated by Monte Carlo method. The first, the experimental values were compared with the results of simulation. The second, calculation was carried out by changing the quality of reflective materials and distance between radiation source and detector. The simulation results were agreed with the experimental results. On the basis of the rate of presence of leak, the most suitable arrangement of detector system was obtained under the conditions that both radiation source and detector covered with graphite or iron of 5 cm thickness and separated each other 3 cm apart. However, by comparing FOM (figure of merit), the suitable arrangement was that radiation source and detector adjoined each other and covered by graphite or iron of 20 cm thickness. (S.Y.)

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Seismic restraint means for radiation detector

International Nuclear Information System (INIS)

Underwood, R.H.; Todt, W.H.

1983-01-01

Seismic restraint means are provided for mounting an elongated, generally cylindrical nuclear radiation detector within a tubular thimble in a nuclear reactor monitor system. The restraint means permits longitudinal movement of the radiation detector into and out of the thimble. Each restraint means comprises a split clamp ring and a plurality of symmetrically spaced support arms pivotally mounted on the clamp ring. Each support arm has spring bias means and thimble contact means eg insulating rollers whereby the contact means engage the thimble with a constant predetermined force which minimizes seismic vibration action on the radiation detector. (author)

Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

Science.gov (United States)

Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G.

2018-03-01

This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm), and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c2.

Particle identification via transition radiation and detectors

International Nuclear Information System (INIS)

Egorytchev, V.; Saveliev, V.; Aplin, S.J.

2000-01-01

Transition radiation detectors show great promise for the purposes of lepton identification in existing and future experiments in high-energy physics such as HERA-B, ATLAS, ALICE in high-luminosity environment. More high performance can be expected in low-luminosity conditions - neutrino experiments (NOMAD), and ideal condition for the use of transition radiation detectors in flying and space high-energy experiments (AMS). This paper discusses the practical theory of transition radiation, basic equation and algorithm suitable for detailed analysis of transition radiation and optimization of transition radiation detectors in the area of experimental high-energy physics. The results are based on detailed Monte Carlo simulation of transition radiation introduced in GEANT and experimental results

Particle identification via transition radiation and detectors

CERN Document Server

Egorytchev, V; Aplin, S J

2000-01-01

Transition radiation detectors show great promise for the purposes of lepton identification in existing and future experiments in high- energy physics such as HERA-B, ATLAS, ALICE in high-luminosity environment. More high performance can be expected in low-luminosity conditions-neutrino experiments (NOMAD), and the ideal condition for the use of transition radiation detectors in flying and space high- energy experiments (AMS). This paper discusses the practical theory of transition radiation, basic equation and algorithm suitable for detailed analysis of transition radiation and optimization of transition radiation detectors in the area of experimental high- energy physics. The results are based on detailed Monte Carlo simulation of transition radiation introduced in GEANT and experimental results. (12 refs).

GaAs Led based NIEL spectrometer for the space radiation environment

International Nuclear Information System (INIS)

Houdayer, A.J.; Hinrichsen, P.F.; Barry, A.L.; Ng, A.

1999-01-01

A NIEL (non-ionizing-energy-loss) spectrometer for the Mir space station is described. The NIEL spectrometer package contained 20 GaAs LEDs, 10 SiC LEDs and 13 locations for TLD-700s. In order to probe different energy regions of the radiation field, the package is divided into 4 compartments covered by absorbers of varying thicknesses. This device has been submitted to proton irradiation. The effects on both the response time and the intensity of the light were measured as a function of the fluence. One of the advantages of LEDs as radiation monitors is their sensitivity and it is shown that it would be possible to detect a fluence of 4*10 7 p/cm 2 of 10 MeV protons, with sensitivity scaled as 1/E for other energies. (A.C.)

Precision synchrotron radiation detectors

International Nuclear Information System (INIS)

Levi, M.; Rouse, F.; Butler, J.

1989-03-01

Precision detectors to measure synchrotron radiation beam positions have been designed and installed as part of beam energy spectrometers at the Stanford Linear Collider (SLC). The distance between pairs of synchrotron radiation beams is measured absolutely to better than 28 /mu/m on a pulse-to-pulse basis. This contributes less than 5 MeV to the error in the measurement of SLC beam energies (approximately 50 GeV). A system of high-resolution video cameras viewing precisely-aligned fiducial wire arrays overlaying phosphorescent screens has achieved this accuracy. Also, detectors of synchrotron radiation using the charge developed by the ejection of Compton-recoil electrons from an array of fine wires are being developed. 4 refs., 5 figs., 1 tab

Radiation detector. [100 A

Energy Technology Data Exchange (ETDEWEB)

Baker, P D; Hollands, D V

1975-12-04

A radiation detector is described in which the radiation is led to a sensor via a 100 A thick gold film filter, which reduces the infrared components of the irradiation to a greater extent than the ultra-violet component reaching the sensor.

Radiation detector arrangements and methods

International Nuclear Information System (INIS)

Jackson, J.

1989-01-01

The patent describes a radiation detector arrangement. It comprises at least one detector element in the form of a temperature-sensitive resistor whose electrical resistance changes in response to radiation incident on the detector element, the resistor having a high positive temperature coefficient of electrical resistance at a transition in its electrical conductance, circuit means for applying a voltage across the resistor during operation of the detector arrangement, and temperature-regulation means for regulating the temperature of the resistor so as to operate the resistor in the transition, characterised in that the temperature-regulation means comprises the resistor and the circuit means which passes sufficient current through the resistor by resistance heating to a position in the transition at which a further increase in its temperature in response to incident radiation reduces the resistance heating by reducing the current, thereby stabilizing the temperature of the resistor at the position. The positive temperature coefficient at the position being sufficiently high that the change in the resistance heating produced by a change in the temperature of the resistor at the position is larger than a change in power of the incident radiation required to produce that same change in temperature of the resistor in the absence of any change in resistance heating

Development of gallium arsenide gamma spectrometric detector

International Nuclear Information System (INIS)

Kobayashi, T.; Kuru, I.

1975-03-01

GaAs semiconductor material has been considered to be a suitable material for gamma-ray spectrometer operating at room temperature since it has a wid-band gap, larger than that of silicon and germanium. The basic objective of this work is to develop a GaAs gamma-ray spectrometric detector which could be used for gamma spectrometric measurement of uranium and plutonium in nuclear fuel safeguards. Liquid phase epitaxial techniques using iron (Fe) as dopant have been developed in making high purity GaAs crystals suitable for gamma-ray spectrometer operating at room temperature. Concentration of Fe in the epitaxial crystal was controlled by initial growth temperature. The best quality epitaxial crystal was obtained under the following conditions: starting temperature is about 800degC, the proportion of Fe to Ga solvent is 1 to 300. Carrier concentration of epitaxial crystals grown distributed in the ranges of 10 12 cm -3 to 10 14 cm -3 at room temperature. The thickness of the crystals ranged from 38 μm to 120 μm. Au-GaAs surface barrier detector was made of epitaxial crystal. Some of the detector were encapsulated in a can with a 50 μm Be window by welding a can to the detector holder. The detector with high energy resolution and good charge collecting characteristics was selected by alpha spectrometry at room temperature. Energy resolution of the detector for gamma-rays up to about 200 keV was very good at room temperature operation. The best energy resolutions taken with a GaAs detector were 3 keV (fwhm) and 3.8 keV for 241 Am 59.6 keV and 57 Co 122 keV, respectively, at room temperature. In order to study the applicability of the detector for nuclear safeguards, the measurements of 235 U gamma-ray spectrum have been carried out at room temperature. It was clarified that the gamma-ray spectrum of enriched U sample could be measured in high resolution with GaAs detector at room temperature, and that the content of 235 U in enriched U sources could be determined by

Electromagnetic radiation detector

Science.gov (United States)

Benson, Jay L.; Hansen, Gordon J.

1976-01-01

An electromagnetic radiation detector including a collimating window, a cathode member having a photoelectric emissive material surface angularly disposed to said window whereby radiation is impinged thereon at acute angles, an anode, separated from the cathode member by an evacuated space, for collecting photoelectrons emitted from the emissive cathode surface, and a negatively biased, high transmissive grid disposed between the cathode member and anode.

Recent developments in radiation detectors and instruments

International Nuclear Information System (INIS)

Das, Debashis

2016-01-01

Radiation detector is the key component in precise and accurate measurement of the nuclear radiations. The detectors deployed for radiation measurements in broadly classified sectors of Energy, Security, Discovery Science and Health and Environments are in general specific to their applications. The nuclear reactors as well as the fuel processing including waste management in energy sector require wide range/variety of detectors and the instruments for safe and precise generation of power. The security sector has gained importance in radiation monitoring in the present security perspective and there are many challenges in development of detector technology. The Discovery Science or the mega science projects viz CERN, Fermilab, GANIL, INO, MACE telescope, ITER etc have continuously generated new demand on detector related technologies that have been also found to be useful in other applications. Similarly, the health and environment monitoring have been also evolving with new technologies and techniques to address the requirement's arising in projects of new nuclear programs

Radiation detectors for reactors

International Nuclear Information System (INIS)

Balagi, V.

2005-01-01

Detection and measurement of radiation plays a vital role in nuclear reactors from the point of view of control and safety, personnel protection and process control applications. Various types of radiation are measured over a wide range of intensity. Consequently a variety of detectors find use in nuclear reactors. Some of these devices have been developed in Electronics Division. They include gas-filled detectors such as 10 B-lined proportional counters and chambers, fission detectors and BF 3 counters are used for the measurement of neutron flux both for reactor control and safety, process control as well as health physics instrumentation. In-core neutron flux instrumentation employs the use detectors such as miniature fission detectors and self-powered detectors. In this development effort, several indigenous materials, technologies and innovations have been employed to suit the specific requirement of nuclear reactor applications. This has particular significance in view of the fact that several new types of reactors such as P-4, PWR and AHWR critical facilities, FBTR, PFBR as well as the refurbishment of old units like CIRUS are being developed. The development work has sought to overcome some difficulties associated with the non-availability of isotopically enriched neutron-sensing materials, achieving all-welded construction etc. The present paper describes some of these innovations and performance results. (author)

Non-ionizing and ionizing dosimetry in a space radiation environment with GaAs and SiC LEDs

International Nuclear Information System (INIS)

Houdayer, A.; Hinrichsen, P.F.; Barry, A.L.; Ng, A.C.; Carlone, C.; Simard, JF.

1996-01-01

This paper describes a dosimetry experiment that will be carried onboard the Russian MIR space station. The experiment will compare the ionizing and Non-ionizing Energy Loss (NEL) in semiconductors of the radiation encountered in space. The ionizing dose will be detected using ThermoLuminescent Dosimeter (TLD) whereas SiC and GaAs LEDs will be used to measure the nonionizing component. The tray will be mounted on the outside of the station for a minimum period of 4 months. The goal of the experiment is to determine the feasibility of using SiC and GaAs LEDs as NEL dosimeters in space. (author)

Self-powered radiation detectors

International Nuclear Information System (INIS)

Gillies, Wallace.

1980-01-01

This invention aims to create a self fed radiation detector comprising a long central emitter-conductor absorbing the neutrons, wrapped in an insulating material, and a thin collector-conductor placed coaxially around the emitter and the insulation, the emitter being constructed of several stranded cables in a given conducting material so that the detector is flexible enough [fr

Photodiodes utilization as ionizing radiation detectors

International Nuclear Information System (INIS)

Khoury, H.J.; Melo, F.A. de

1987-01-01

The response of photodiodes to α and γ radiation is studied, using for α spectrometry measures and for γ radiation dosimetry. Therefore, the response of BPY-12 photodiodes as α particle detector is first studied. The results show that the response is linear with the energy of incidence radiation, one resolution 25Kev for energy of 5,4 MeV from 241 Am. For dosimetric measures, the response of SHF-206 photodiodes, when exposed at γ radiation is studied, and the results show taht the response of this detector is linear with the dose ratio, proving its practicability in γ radiation dosimetry. (C.G.C.) [pt

Radiation detector system having heat pipe based cooling

Science.gov (United States)

Iwanczyk, Jan S.; Saveliev, Valeri D.; Barkan, Shaul

2006-10-31

A radiation detector system having a heat pipe based cooling. The radiation detector system includes a radiation detector thermally coupled to a thermo electric cooler (TEC). The TEC cools down the radiation detector, whereby heat is generated by the TEC. A heat removal device dissipates the heat generated by the TEC to surrounding environment. A heat pipe has a first end thermally coupled to the TEC to receive the heat generated by the TEC, and a second end thermally coupled to the heat removal device. The heat pipe transfers the heat generated by the TEC from the first end to the second end to be removed by the heat removal device.

CVD diamond detectors for ionizing radiation

Science.gov (United States)

Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

Neutron spectrometry by diamond detector for nuclear radiation

International Nuclear Information System (INIS)

Kozlov, S.F.; Konorova, E.A.; Barinov, A.L.; Jarkov, V.P.

1975-01-01

Experiments on fast neutron spectrometry using the nuclear radiation diamond detector inside a horizontal channel of a water-cooled and water-moderated reactor are described. It is shown that the diamond detector enables neutron spectra to be measured within the energy range of 0.3 to 10 MeV against reactor gamma-radiation background and has radiation resistance higher than that of conventional semiconductor detectors. (U.S.)

Microwave GaAs Integrated Circuits On Quartz Substrates

Science.gov (United States)

Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

1994-01-01

Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

Study of detectors in beta radiation fields

International Nuclear Information System (INIS)

Albuquerque, M. da P.P.; Xavier, M.; Caldas, L.V.E.

1987-01-01

Several commercial detectors used with gamma or X radiation are studied. Their sensibility and energetic dependence are analysed in exposures of beta radiation fields. A comparative evaluation with the reference detector (the extrapolation chamber) is presented. (M.A.C.) [pt

Development of innovative silicon radiation detectors

CERN Document Server

Balbuena, JuanPablo

Silicon radiation detectors fabricated at the IMB-CNM (CSIC) Clean Room facilities using the most innovative techniques in detector technology are presented in this thesis. TCAD simulation comprises an important part in this work as becomes an essential tool to achieve exhaustive performance information of modelled detectors prior their fabrication and subsequent electrical characterization. Radiation tolerance is also investigated in this work using TCAD simulations through the potential and electric field distributions, leakage current and capacitance characteristics and the response of the detectors to the pass of different particles for charge collection efficiencies. Silicon detectors investigated in this thesis were developed for specific projects but also for applications in experiments which can benefit from their improved characteristics, as described in Chapter 1. Double-sided double type columns 3D (3D-DDTC) detectors have been developed under the NEWATLASPIXEL project in the framework of the CERN ...

Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance

CERN Document Server

Rogalla, M

1999-01-01

A model for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors is developed. The model is based on a field-enhanced electron capture of the EL2-defect. The influence of the compensation mechanism in SI-GaAs on the field distribution, leakage current density and charge collection properties of the detectors will be discussed. The detailed understanding allows then a device optimization. (author)

Radiation effects on light sources and detectors

International Nuclear Information System (INIS)

Barnes, C.E.

1985-01-01

The rapidly expanding field of optoelectronics includes a wide variety of both military and non-military applications in which the systems must meet radiation exposure requirements. Herein, we review the work on radiation effects on sources and detectors for such optoelectronic systems. For sources the principal problem is permanent damage-induced light output degradation, while for detectors it is ionizing radiation-induced photocurrents

Detectors for Particle Radiation

Science.gov (United States)

Kleinknecht, Konrad

1999-01-01

This textbook provides a clear, concise and comprehensive review of the physical principles behind the devices used to detect charged particles and gamma rays, and the construction and performance of these many different types of detectors. Detectors for high-energy particles and radiation are used in many areas of science, especially particle physics and nuclear physics experiments, nuclear medicine, cosmic ray measurements, space sciences and geological exploration. This second edition includes all the latest developments in detector technology, including several new chapters covering micro-strip gas chambers, silicion strip detectors and CCDs, scintillating fibers, shower detectors using noble liquid gases, and compensating calorimeters for hadronic showers. This well-illustrated textbook contains examples from the many areas in science in which these detectors are used. It provides both a coursebook for students in physics, and a useful introduction for researchers in other fields.

Monitoring radiation damage in the ATLAS pixel detector

CERN Document Server

Schorlemmer, André Lukas; Quadt, Arnulf; Große-Knetter, Jörn; Rembser, Christoph; Di Girolamo, Beniamino

2014-11-05

Radiation hardness is one of the most important features of the ATLAS pixel detector in order to ensure a good performance and a long lifetime. Monitoring of radiation damage is crucial in order to assess and predict the expected performance of the detector. Key values for the assessment of radiation damage in silicon, such as the depletion voltage and depletion depth in the sensors, are measured on a regular basis during operations. This thesis summarises the monitoring program that is conducted in order to assess the impact of radiation damage and compares it to model predictions. In addition, the physics performance of the ATLAS detector highly depends on the amount of disabled modules in the ATLAS pixel detector. A worrying amount of module failures was observed during run I. Thus it was decided to recover repairable modules during the long shutdown (LS1) by extracting the pixel detector. The impact of the module repairs and module failures on the detector performance is analysed in this thesis.

CVD diamond detectors for ionizing radiation

CERN Document Server

Friedl, M; Bauer, C; Berfermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

1999-01-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2*4 cm/sup 2/ have been grown and refined for better charge collection properties, which are measured with a beta source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5*10/sup 15/ cm/sup -2/ to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (16 refs).

CVD diamond detectors for ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Friedl, M. E-mail: markus.friedl@cern.ch; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2x4 cm{sup 2} have been grown and refined for better charge collection properties, which are measured with a {beta} source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5x10{sup 15} cm{sup -2} to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (author)

Department of Radiation Detectors - Overview

International Nuclear Information System (INIS)

Piekoszewski, J.

1997-01-01

Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author)

Department of Radiation Detectors - Overview

Energy Technology Data Exchange (ETDEWEB)

Piekoszewski, J. [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland)

1997-12-31

Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author).

Mass and energy dispersive recoil spectrometry of GaAs structures

International Nuclear Information System (INIS)

Hult, M.

1994-01-01

Mass and energy dispersive Recoil Spectrometry (RS) using heavy ions at energies of about 0.2Α-0.8Α MeV has attracted much interest recently due to its potential for separately and unambiguously generating information on isotopic depth distributions. The principal advantages of mass and energy dispersive RS are that both light and heavy elements can be separately studied simultaneously and problems caused by chemical matrix effects are avoided since the technique is based on high energy nucleus-nucleus scattering. In order to elucidate reactions taking place in various GaAs structures, Time of flight-Energy (ToF-E) RS was developed to allow Ga and As to be studied separately down to depths of about 500-800 nm with a depth resolution of about 16 nm at the surface. This was shown in a study of an Al x Ga 1-x As quantum-well structure. The benefits of using ToF-E RS on GaAs structures were further demonstrated in studies of Co/GaAs and CoSi 2 /GaAs reactions, as well as in a study of the composition of MOCVD grown Al x Ga 1-x As. Most recoil measurements employed 127 I at energies of about 50-90 MeV as projectiles. The recoil detector telescope consisted of a silicon energy detector and two carbon foil time pick-off detectors separated by a variable flight length of 213.5-961 mm. The reactions taking place between various thin films and GaAs were also studied using complementary techniques such as XRD, XPS and SEM. Co was found to react extensively with GaAs, already at about 300 degrees C, making it unsuitable as a contact material. Thin films of Co and Si were found to react extensively with each other and to form CoSi 2 at 500 degrees C and above. CoSi 2 , a low resistivity silicide, turned out to be stable on GaAs, at least up to 700 degrees C. Considerable grain growth could cause problems, however, in the use of CoSi 2 -contacts. 112 refs, figs, tabs

Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

Energy Technology Data Exchange (ETDEWEB)

Lu, P.H., E-mail: pinghe.lu@redlen.com; Gomolchuk, P.; Chen, H.; Beitz, D.; Grosser, A.W.

2015-06-01

This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments. - Highlights: • We developed ruggedization methods to enhance reliability of CZT detector assemblies. • Attachment of CZT radiation detectors was improved through comparative studies. • Bare detector metallization

Effects of ionizing radiation on cryogenic infrared detectors

Science.gov (United States)

Moseley, S. H.; Silverberg, R. F.; Lakew, B.

1989-01-01

The Diffuse Infrared Background Experiment (DIRBE) is one of three experiments to be carried aboard the Cosmic Background Explorer (COBE) satellite scheduled to be launched by NASA on a Delta rocket in 1989. The DIRBE is a cryogenic absolute photometer operating in a liquid helium dewar at 1.5 K. Photometric stability is a principal requirement for achieving the scientific objectives of this experiment. The Infrared Astronomy Satellite (IRAS), launched in 1983, which used detectors similar to those in DIRBE, revealed substantial changes in detector responsivity following exposure to ionizing radiation encountered on passage through the South Atlantic Anomaly (SAA). Since the COBE will use the same 900 Km sun-synchronous orbit as IRAS, ionizing radiation-induced performance changes in the detectors were a major concern. Here, ionizing radiation tests carried out on all the DIRBE photodetectors are reported. Responsivity changes following exposure to gamma rays, protons, and alpha particle are discussed. The detector performance was monitored following a simulated entire mission life dose. In addition, the response of the detectors to individual particle interactions was measured. The InSb photovoltaic detectors and the Blocked Impurity Band (BIB) detectors revealed no significant change in responsivity following radiation exposure. The Ge:Ga detectors show large effects which were greatly reduced by proper thermal annealing.

General gamma-radiation test of TGC detectors

CERN Document Server

Smakhtin, V P

2004-01-01

The TGC detectors are expected to provide the Muon trigger for the ATLAS detector in the forward region of the ATLAS Muon Spectrometer. The TGC detectors have to provide a trigger signal within 25 ns of the LHC accelerator bunch spacing, with an efficiency exceeding 95%, while exposed to an effective)photon and neutron background ranging from 30 to 150 Hz/cm/sup 2/. In order to test TGC detectors in high rate environment every detector was irradiated at 2500 Cu Co-60 source in Radiation Facility of Weizmann Institute of Science at nominal operating voltage and at photon rate several times above the expected background. This radiation test was succeeded in diagnostics of the hot spots inside detectors. The present publication refers to the test results of 800 TGC detectors produced in the Weizmann Institute of Science. (1 refs).

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Superconductive tunnel structures as radiation detectors

International Nuclear Information System (INIS)

Barone, A.; Gray, K.E.

1985-08-01

A brief review is given on various aspects of the potential of superconducting tunnel junctions as detectors for atomic and nuclear radiations. On the basis of recent results main advantages and drawbacks are indicated providing a preliminary comparison with the presently used semiconductor detectors. The basic ideas underlying the physics of the interaction of nuclear particles and other radiations with superconducting junctions are outlined. 9 refs., 1 tab

Method and circuit for stabilizing conversion gain of radiation detectors of a radiation detection system

International Nuclear Information System (INIS)

Stoub, E.W.

1986-01-01

A method is described for calibrating the gain of an array of radiation detectors of a radiation detection system comprising the steps of: (a) measuring in parallel for each radiation detector using a predetermined calibration point the energy map status, thereby obtaining an energy response vector whose elements correspond to the individual output of each radiation detector, each predetermined calibration point being a prescribed location corresponding to one of the radiation detectors; (b) multiplying that energy response vector with a predetermined deconvolution matrix, the deconvolution matrix being the inversion of a contribution matrix containing matrix elements C/sub IJ/, each such matrix element C/sub IJ/ of the contribution matrix representing the relative contribution level of a radiation detector j of the detection system for a point radiation source placed at a location i, thereby obtaining a gain vector product for the radiation detectors; (c) adjusting the gains of the radiation detectors with respect to the gain vector product such that a unity gain vector is essentially obtained; (d) measuring again the energy map status according to step (a); and (e) if the energy map status fails to essentially produce a unity gain vector repeat steps (a) to (d) until the energy map status substantially corresponds to unity

Radiation detectors as surveillance monitors

International Nuclear Information System (INIS)

Fehlau, P.E.; Dowdy, E.J.

1981-01-01

The International Atomic Energy Agency (IAEA) proposes to use personnel dosimetry radiation detectors as surveillance monitors for safeguards purposes. It plans to place these YES/NO monitors at barrier penetration points declared closed under IAEA safeguards to detect the passage of plutonium-bearing nuclear material, usually spent fuel. For this application, commercially available dosimeters were surveyed as well as other radiation detectors that appeared suitable and likely to be marketed in the near future. No primary advantage was found in a particular detector type because in this application backgrounds vary during long counting intervals. Secondary considerations specify that the monitor be inexpensive and easy to tamper-proof, interrogate, and maintain. On this basis radiophotoluminescent, thermoluminescent, and electronic dosimeters were selected as possible routine monitors; the latter two may prove useful for data-base acquisition

Self-powered radiation detector

International Nuclear Information System (INIS)

Goldstein, N.P.; Todt, W.H.

1979-01-01

Self-powered gamma radiation detector composed of a conducting emitter surrounded by an insulating medium and a conducting tubular collector, the emitter being a hollow tube containing an electrical insulator [fr

Differential Detector for Measuring Radiation Fields

International Nuclear Information System (INIS)

Broide, A.; Marcus, E.; Brandys, I.; Schwartz, A.; Wengrowicz, U.; Levinson, S.; Seif, R.; Sattinger, D.; Kadmon, Y.; Tal, N.

2004-01-01

In case of a nuclear accident, it is essential to determine the source of radioactive contamination in order to analyze the risk to the environment and to the population. The radiation source may be a radioactive plume on the air or an area on the ground contaminated with radionuclides. Most commercial radiation detectors measure only the radiation field intensity but are unable to differentiate between the radiation sources. Consequently, this limitation causes a real problem in analyzing the potential risk to the near-by environment, since there is no data concerning the contamination ratios in the air and on the ground and this prevents us from taking the required steps to deal with the radiation event. This work presents a GM-tube-based Differential Detector, which enables to determine the source of contamination

Radiation damage resistance in mercuric iodide X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Patt, B E; Dolin, R C; Devore, T M; Markakis, J M [EG and G Energy Measurements, Inc., Goleta, CA (USA); Iwanczyk, J S; Dorri, N [Xsirius, Inc., Marina del Rey, CA (USA); Trombka, J [National Aeronautics and Space Administration, Greenbelt, MD (USA). Goddard Space Flight Center

1990-12-20

Mercuric iodide (HgI{sub 2}) radiation detectors show great potential as ambient-temperature solid-state detectors for X-rays, gamma rays and visible light, with parameters that are competitive with existing technologies. In a previous experiment, HgI{sub 2} detectors irradiated with 10 MeV protons/cm{sup 2} exhibited no damage. The 10 MeV protons represent only the low range of the spectrum of energies that are important. An experiment has been conducted at the Saturne accelerator facility at Saclay, France, to determine the susceptibility of these detectors to radiation damage by high-energy (1.5 GeV) protons. The detectors were irradiated to a fluence of 10{sup 8} protons/cm{sup 2}. This fluence is equivalent to the cosmic radiation expected in a one-year period in space. The resolution of the detectors was measured as a function of the integral dose. No degradation in the response of any of the detectors or spectrometers was seen. It is clear from this data that HgI{sub 2} has extremely high radiation-damage resistance, exceeding that of most other semiconductor materials used for radiation detectors. Based on the results shown to date, HgI{sub 2} detectors are suitable for applications in which they may be exposed to high integral dose levels. (orig.).

Degradation of silicon AC-coupled microstrip detectors induced by radiation

Science.gov (United States)

Bacchetta, N.; Bisello, D.; Canali, C.; Fuochi, P. G.; Gotra, Y.; Paccagnella, A.; Verzellesi, G.

1993-12-01

Results are presented showing the radiation response of AC-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested, and the radiation-induced variations of the DC electrical parameters have been analyzed. The long-term postirradiation behavior of detector characteristics has been studied, and the relevant room-temperature annealing phenomena have been examined. The main radiation damage effects after gamma or proton irradiation of FOXFET biased microstrip detectors consist of an increase in the total leakage current, while both the detector dynamic resistance and FOXFET switching voltage decrease.

Hybrid anode for semiconductor radiation detectors

Science.gov (United States)

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

2013-11-19

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Radiation-hardened optoelectronic components: detectors

International Nuclear Information System (INIS)

Wiczer, J.J.

1986-01-01

In this talk, we will survey recent research in the area of radiation hardened optical detectors. We have studied conventional silicon photodiode structures, special radiation hardened silicon photodiodes, and special double heterojunction AlGaAs/GaAs photodiodes in neutron, gamma, pulsed x-ray and charged particle environments. We will present results of our work and summarize other research in this area. Our studies have shown that detectors can be made to function acceptably after exposures to neutron fluences of 10 15 n/cm 2 , total dose gamma exposures of 10 8 rad (Si), and flash x-ray environments of 10 8 rad/sec (Si). We will describe detector structures that can operate through these conditions, pre-rad and post-rad operational characteristics, and experimental conditions that produced these results. 23 refs., 10 figs., 1 tab

Circuitry for use with an ionizing-radiation detector

International Nuclear Information System (INIS)

Marshall, J.H. III; Harrington, T.M.

1976-01-01

An improved system of circuitry for use in combination with an ionizing-radiation detector over a wide range of radiation levels includes a current-to-frequency converter together with a digital data processor for respectively producing and measuring a pulse repetition frequency which is proportional to the output current of the ionizing-radiation detector, a dc-to-dc converter for providing closely regulated operating voltages from a rechargeable battery and a bias supply for providing high voltage to the ionization chamber. The ionizing-radiation detector operating as a part of this system produces a signal responsive to the level of ionizing radiation in the vicinity of the detector, and this signal is converted into a pulse frequency which will vary in direct proportion to such level of ionizing-radiation. The data processor, by counting the number of pulses from the converter over a selected integration interval, provides a digital indication of radiation dose rate, and by accumulating the total of all such pulses provides a digital indication of total integrated dose. Ordinary frequency-to-voltage conversion devices or digital display techniques can be used as a means for providing audible and visible indications of dose and dose-rate levels

Nuclear radiation-warning detector that measures impedance

Science.gov (United States)

Savignac, Noel Felix; Gomez, Leo S; Yelton, William Graham; Robinson, Alex; Limmer, Steven

2013-06-04

This invention is a nuclear radiation-warning detector that measures impedance of silver-silver halide on an interdigitated electrode to detect light or radiation comprised of alpha particles, beta particles, gamma rays, X rays, and/or neutrons. The detector is comprised of an interdigitated electrode covered by a layer of silver halide. After exposure to alpha particles, beta particles, X rays, gamma rays, neutron radiation, or light, the silver halide is reduced to silver in the presence of a reducing solution. The change from the high electrical resistance (impedance) of silver halide to the low resistance of silver provides the radiation warning that detected radiation levels exceed a predetermined radiation dose threshold.

ALICE Transition Radiation Detector (TRD), test beam.

CERN Multimedia

2003-01-01

Electrons and positrons can be discriminated from other charged particles using the emission of transition radiation - X-rays emitted when the particles cross many layers of thin materials. To develop such a Transition Radiation Detector(TRD) for ALICE many detector prototypes were tested in mixed beams of pions and electrons, as in the example shown here.

Flame detector operable in presence of proton radiation

Science.gov (United States)

Walker, D. J.; Turnage, J. E.; Linford, R. M. F.; Cornish, S. D. (Inventor)

1974-01-01

A detector of ultraviolet radiation for operation in a space vehicle which orbits through high intensity radiation areas is described. Two identical ultraviolet sensor tubes are mounted within a shield which limits to acceptable levels the amount of proton radiation reaching the sensor tubes. The shield has an opening which permits ultraviolet radiation to reach one of the sensing tubes. The shield keeps ultraviolet radiation from reaching the other sensor tube, designated the reference tube. The circuitry of the detector subtracts the output of the reference tube from the output of the sensing tube, and any portion of the output of the sensing tube which is due to proton radiation is offset by the output of the reference tube. A delay circuit in the detector prevents false alarms by keeping statistical variations in the proton radiation sensed by the two sensor tubes from developing an output signal.

Radiation effects in IRAS extrinsic infrared detectors

Science.gov (United States)

Varnell, L.; Langford, D. E.

1982-01-01

During the calibration and testing of the Infrared Astronomy Satellite (IRAS) focal plane, it was observed that the extrinsic photoconductor detectors were affected by gamma radiation at dose levels of the order of one rad. Since the flight environment will subject the focal plane to dose levels of this order from protons in single pass through the South Atlantic Anomaly, an extensive program of radiation tests was carried out to measure the radiation effects and to devise a method to counteract these effects. The effects observed after irradiation are increased responsivity, noise, and rate of spiking of the detectors after gamma-ray doses of less than 0.1 rad. The detectors can be returned almost to pre-irradiation performance by increasing the detector bias to breakdown and allowing a large current to flow for several minutes. No adverse effects on the detectors have been observed from this bias boost, and this technique will be used for IRAS with frequent calibration to ensure the accuracy of observations made with the instrument.

Temperature effects on radiation damage in plastic detectors

International Nuclear Information System (INIS)

Mendoza A, D.

1996-01-01

The objective of present work was to study the temperature effect on radiation damage registration in the structure of a Solid State Nuclear Track Detector of the type CR-39. In order to study the radiation damage as a function of irradiation temperature, sheets of CR-39 detectors were irradiated with electron beams, simulating the interaction of positive ions. CR-39 detectors were maintained at a constant temperature from room temperature up to 373 K during irradiation. Two techniques were used from analyzing changes in the detector structure: Electronic Paramagnetic Resonance (EPR) and Infrared Spectroscopy (IR). It was found by EPR analysis that the amount of free radicals decrease as irradiation temperature increases. The IR spectrums show yield of new functional group identified as an hydroxyl group (OH). A proposed model of interaction of radiation with CR-39 detectors is discussed. (Author)

Radiation hard cryogenic silicon detectors

International Nuclear Information System (INIS)

Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

2002-01-01

It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

Synchrotron radiation and multichannel detectors in structural analysis

Energy Technology Data Exchange (ETDEWEB)

Mokulskii, M

1979-10-01

A survey is presented of the development of multichannel synchrotron X radiation detectors for the structural analysis of crystals. Tests are currently under way of a 4-thousand-channel plane detector of soft X radiation. The detector consists of a multiwire proportional counter using argon and CO/sub 2/ as the working gases. The detector is coupled to a computer processing information and displaying the respective X-ray diffraction images on the monitor. The described equipment allows imaging, eg., the cross section of the elementary cell of a DNA crystal. A 16-thousand-channel detector exists in the present time and the building is envisaged of a detector with 65 thousand channels.

Synchrotron radiation and multichannel detectors in structural analysis

International Nuclear Information System (INIS)

Mokulskij, M.

1979-01-01

A survey is presented of the development of multichannel synchrotron X radiation detectors for the structural analysis of crystals. Tests are currently under way of a 4-thousand-channel plane detector of soft X radiation. The detector consists of a multiwire proportional counter using argon and CO 2 as the working gases. The detector is coupled to a computer processing information and displaying the respective X-ray diffraction images on the monitor. The described equipment allows imaging, eg., the cross section of the elementary cell of a DNA crystal. A 16-thousand-channel detector exists in the present time and the building is envisaged of a detector with 65 thousand channels. (J.B.)

Detectors for particle radiation. 2. rev. ed.

International Nuclear Information System (INIS)

Kleinknecht, K.

1987-01-01

This book is a description of the set-up and mode of action of detectors for charged particles and gamma radiation for students of physics, as well as for experimental physicists and engineers in research and industry: Ionization chamber, proportional counter, semiconductor counter; proportional chamber, drift chamber, bubble chamber, spark chamber, photomultiplier, laser ionization, silicion strip detector; Cherenkov counter, transition radiation detector; electron-photon-cascade counter, hadron calorimeter; magnetic spectrometer; applications in nuclear medicine, geophysics, space travel, atom physics, nuclear physics, and high-energy physics. With 149 figs., 20 tabs [de

Method of neutralising the effects of electromagnetic radiation in a radiation detector and a radiation detector applying the procedure

International Nuclear Information System (INIS)

Gripentog, W.G.

1972-01-01

Circuitry is described by means of which radiation detectors of the Neher-White type, employing ionisation chambers can be unaffected by electromagnetic radiation which would otherwise cause inductive effects leading to erroneous signals. It is therefore unnecessary to use shielded cables for these instruments. (JIW)

Long-distance transmission of light in a scintillator-based radiation detector

Science.gov (United States)

Dowell, Jonathan L.; Talbott, Dale V.; Hehlen, Markus P.

2017-07-11

Scintillator-based radiation detectors capable of transmitting light indicating the presence of radiation for long distances are disclosed herein. A radiation detector can include a scintillator layer and a light-guide layer. The scintillator layer is configured to produce light upon receiving incident radiation. The light-guide layer is configured to receive light produced by the scintillator layer and either propagate the received light through the radiation detector or absorb the received light and emit light, through fluorescence, that is propagated through the radiation detector. A radiation detector can also include an outer layer partially surrounding the scintillator layer and light-guide layer. The index of refraction of the light-guide layer can be greater than the index of refraction of adjacent layers.

18th International Workshop on Radiation Imaging Detectors

CERN Document Server

2016-01-01

The International Workshops on Radiation Imaging Detectors are held yearly and provide an international forum for discussing current research and developments in the area of position sensitive detectors for radiation imaging, including semiconductor detectors, gas and scintillator-based detectors. Topics include processing and characterization of detector materials, hybridization and interconnect technologies, design of counting or integrating electronics, readout and data acquisition systems, and applications in various scientific and industrial fields. The workshop will have plenary sessions with invited and contributed papers presented orally and in poster sessions. The invited talks will be chosen to review recent advances in different areas covered in the workshop.

Experimental studies of radiation damage of silicon detectors

International Nuclear Information System (INIS)

Angelescu, T.; Ghete, V.M.; Ghiordanescu, N.; Lazanu, I.; Mihul, A.; Golutvin, I.; Lazanu, S.; Savin, I.; Vasilescu, A.; Biggeri, U.; Borchi, E.; Bruzzi, M.; Li, Z.; Kraner, H.W.

1994-02-01

New particle physics experiments are correlated with high luminosity and/or high energy. The new generation of colliding beam machines which will be constructed will make an extrapolation of a factor of 100 in the center of mass energy and of 1000 in luminosity beyond present accelerators. The scientific community hopes that very exciting physics results could be achieved this way, from the solution to the problem of electroweak symmetry breaking to the possible discovery of new, unpredicted phenomena. The particles which compose the radiation field are: electrons, pions, neutrons, protons and photons. It has become evident that the problem of the radiation resistance of detectors in this severe environment is a crucial one. This situation is complicated more by the fact that detectors must work all the run time of the machine, and better all the time of the experiment, without replacement (part or whole). So, studies related to the investigation of the radiation hardness of all detector parts, are developing. The studies are in part material and device characterization after irradiation, and in part technological developments, made in order to find harder, cheaper technologies, for larger surfaces. Semiconductor detectors have proven to be a good choice for vertex and calorimeter. Both fixed target machines and colliders had utilized in the past silicon junction detectors as the whole or part of the detection system. Precision beam hodoscopes and sophisticated trigger devices with silicon are equally used. The associated electronics in located near the detectors, and is subjected to the same radiation fields. Studies of material and device radiation hardness are developing in parallel. Here the authors present results on the radiation hardness of silicon, both as a bulk material and as detectors, to neutron irradiation at high fluences

Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

International Nuclear Information System (INIS)

Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

2005-01-01

A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.

1992-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

Radiation detector

Energy Technology Data Exchange (ETDEWEB)

Ohata, Shuichi; Takeuchi, Yoji

1968-10-30

Herein disclosed is an ionization chamber the airtightness of which can be readily tested. The ionization chamber is characterized in that a small amount of helium gas is filled in the chamber in combination with other ionization gases such as argon gas, xenon gas and the like. Helium leakage from the chamber is measured by a known helium gas sensor in a vacuum vessel. Hence the long term drift of the radiation detector sensitivity may be determined.

Analysis of changes in environmental radiation, and three types of environmental radiation detector performance comparisons

International Nuclear Information System (INIS)

Park, J.H; Seo, J.H; Park, S.M; Yu, B.N; Park, J.H; Joo, K.S

2013-06-01

High-pressure ion chamber (GE Reuter-Stokes, HPIC), accuracy is high but the high price and do not have the ability nuclide analysis is a disadvantage. NaI(Tl) and PMT scintillation detector of radioactive materials can be divided. Environmental radiation measurements using a semiconductor with SiPM detector PMT to replace the value of the results were compared. SiPM detector using radiation environment were measured in the field to verify the accuracy and energy resolution. SiPMs performance as environmental radiation measurement equipment and radioactive material distinction as a personal dosimeter based technology, using the above results were prepared. The interest on the environmental radiation due to the Fukushima power plant crisis in Japan has been growing concern about the radiation environment of the relatively close proximity Korea is a very heightened state. Could be confirmed in the radiation environment of nuclear power plants around the analysis and performance of the next generation of environmental radiation meter. Fukushima power plants accident after 2 years, the equipment installed by this analysis meets the performance as a radiation detector could be confirmed as follows. CANA Inc. developed by radionuclides classification of using man-made and natural radionuclides and man-made radionuclides separated, ensure the value of the results were analyzed. Could be and alternative to the conventional detector energy resolution ( 137 CS<15%) and linearity (<15%) to satisfy the performance requirements of the measurement result of environmental radiation detector is considered. SiPM radiation environment changes and HPIC and NaI(TI) scintillation detector installed in Korea of the Fukushima power plant after the accident, radiation environment using a small alternative was to verify the accuracy of the measuring equipment. A big difference in performance as invisible by comparison with the large detector Assay miniaturization rough as a personal

Monolithic active pixel radiation detector with shielding techniques

Energy Technology Data Exchange (ETDEWEB)

Deptuch, Grzegorz W.

2018-03-20

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Radiation damage studies for the D0 silicon detector

International Nuclear Information System (INIS)

Lehner, F.

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Successful beam tests for ALICE Transition Radiation Detector

CERN Multimedia

2002-01-01

Another round of beam tests of prototypes for the Transition Radiation Detector (TRD) for ALICE has been completed and there are already some good results. Mass production of the components of the detector will start early next year.   Top view of the setup for the Transition Radiation Detector prototype tests at CERN.On the left, can be seen the full-scale TRD prototype together with four smaller versions. These are busy days for the TRD (Transition Radiation Detector) team of ALICE. Twenty people - mainly from Germany, but also from Russia and Japan - were working hard during the beam tests this autumn at CERN to assess the performance of their detector prototypes. Analysis of the data shows that the TRD can achieve the desired physics goal even for the highest conceivable multiplicities in lead-lead collisions at the LHC. In its final configuration in the ALICE experiment, the TRD will greatly help in identifying high-momentum electrons, which are 'needles in a haystack' that consists mostly of...

Development of CVD diamond radiation detectors

CERN Document Server

Adam, W; Berdermann, E; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fisch, D; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Meier, D; Mishina, M; Le Normand, F; Pan, L S; Pernegger, H; Pernicka, Manfred; Pirollo, S; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zoeller, M M

1998-01-01

Diamond is a nearly ideal material for detecting ionizing radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow a diamond detector to be used in high ra diation, high temperature and in aggressive chemical media. We have constructed charged particle detectors using high quality CVD diamond. Characterization of the diamond samples and various detect ors are presented in terms of collection distance, $d=\\mu E \\tau$, the average distance electron-hole pairs move apart under the influence of an electric field, where $\\mu$ is the sum of carrier mo bilities, $E$ is the applied electric field, and $\\tau$ is the mobility weighted carrier lifetime. Over the last two years the collection distance increased from $\\sim$ 75 $\\mu$m to over 200 $\\mu$ m. With this high quality CVD diamond a series of micro-strip and pixel particle detectors have been constructed. These devices were tested to determine their position resolution and signal to n oise performance. Diamond detectors w...

Transition-radiation detectors for cosmic-ray research

International Nuclear Information System (INIS)

Mueller, D.; Chicago Univ., Ill.

1975-01-01

Transition-radiation detectors for cosmic-ray work are described which consist of plastic foam of multiple plastic foil radiators, followed by proportional chambers. A summary of the properties of such detectors is given, and the detection and discrimination efficiencies for energetic particles are discussed. Several possible applications of such devices for studies of cosmic-ray particles in the energy region γ=E/mc 2 >10 3 are advertised

PAMELA Space Mission: The Transition Radiation Detector

Science.gov (United States)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; De Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2003-07-01

PAMELA telescope is a satellite-b orne magnetic spectrometer built to fulfill the primary scientific objectives of detecting antiparticles (antiprotons and positrons) in the cosmic rays, and to measure spectra of particles in cosmic rays. The PAMELA telescope is currently under integration and is composed of: a silicon tracker housed in a permanent magnet, a time of flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD detector is composed of 9 sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD detector characteristics will be described along with its performance studied exposing the detector to particle beams of electrons, pions, muons and protons of different momenta at both CERN-PS and CERN-SPS facilities.

X-Ray and Gamma-Ray Radiation Detector

DEFF Research Database (Denmark)

2015-01-01

Disclosed is a semiconductor radiation detector for detecting X-ray and / or gamma-ray radiation. The detector comprises a converter element for converting incident X-ray and gamma-ray photons into electron-hole pairs, at least one cathode, a plurality of detector electrodes arranged with a pitch...... (P) along a first axis, a plurality of drift electrodes, a readout circuitry being configured to read out signals from the plurality of detector electrodes and a processing unit connected to the readout circuitry and being configured to detect an event in the converter element. The readout circuitry...... is further configured to read out signals from the plurality of drift electrodes, and the processing unit is further configured to estimate a location of the event along the first axis by processing signals obtained from both the detector electrodes and the drift electrodes, the location of the event along...

Noise behaviour of semiinsulating GaAs particle detectors at various temperatures before and after irradiation

International Nuclear Information System (INIS)

Tenbusch, F.; Braunschweig, W.; Chu, Z.; Krais, R.; Kubicki, T.; Luebelsmeyer, K.; Pandoulas, D.; Rente, C.; Syben, O.; Toporowski, M.; Wittmer, B.; Xiao, W.J.

1998-01-01

We investigated the noise behaviour of surface barrier detectors (double sided Schottky contact) made of semiinsulating GaAs. Two types of measurements were performed: equivalent noise charge (ENC) and noise power density spectra in a frequency range from 10 Hz to 500 kHz. The shape of the density spectra are a powerful tool to examine the physical origin of the noise, before irradiation it is dominated by generation-recombination processes caused by deep levels. Temperature dependent noise measurements reveal the deep level parameters like activation energy and cross section, which are also extracted by analyzing the time transients of the charge pulse from α-particles. After irradiation with protons, neutrons and pions the influence of the deep levels being originally responsible for the noise is found to decrease and a reduction of the noise over the entire frequency range with increasing fluence is observed. (orig.)

Radiation field mapping using a mechanical-electronic detector

Energy Technology Data Exchange (ETDEWEB)

Czayka, M., E-mail: mczayka@kent.ed [College of Technology, Kent State University-Ashtabula 3300 Lake Road West, Ashtabula, OH 44004 (United States); Program on Electron Beam Technology, Kent State University, P.O. Box 1028, Middlefield, OH 44062 (United States); Fisch, M. [Program on Electron Beam Technology, Kent State University, P.O. Box 1028, Middlefield, OH 44062 (United States); College of Technology, Kent State University, P.O. Box 5190, Kent, OH 44242-0001 (United States)

2010-04-15

A method of radiation field mapping of a scanned electron beam using a Faraday-type detector and an electromechanical linear translator is presented. Utilizing this arrangement, fluence and fluence rate measurements can be made at different locations within the radiation field. The Faraday-type detector used in these experiments differs from most as it consists of a hollow stainless steel sphere. Results are presented in two- and three-dimensional views of the radiation field.

Integration of single-photon sources and detectors on GaAs

NARCIS (Netherlands)

Digeronimo, G.E.; Petruzzella, Maurangelo; Birindelli, Simone; Gaudio, Rosalinda; Poor, Sartoon Fattah; van Otten, Frank W.M.; Fiore, Andrea

2016-01-01

Quantum photonic integrated circuits (QPICs) on a GaAs platform allow the generation, manipulation, routing, and detection of non-classical states of light, which could pave the way for quantum information processing based on photons. In this article, the prototype of a multi-functional QPIC is

The application of photoconductive detectors to the measurement of x-ray production in laser produced plasmas

International Nuclear Information System (INIS)

Kania, D.R.; Bell, P.; Trebes, J.

1987-08-01

Photoconductive detectors (PCDs) offer an attractive alternative for the measurement of pulsed x-rays from laser produced plasmas. These devices are fast (FWHM ∼100 ps), sensitive and simple to use. We have used InP, GaAs, and Type IIa diamond as PCDs to measure x-rays emission from 100 eV to 100 keV. Specifically, we have used these detectors to measure total radiation yields, corona temperatures, and hot electron generated x-rays from laser produced plasmas. 5 refs., 4 figs

Radiation damage in barium fluoride detector materials

International Nuclear Information System (INIS)

Levey, P.W.; Kierstead, J.A.; Woody, C.L.

1988-01-01

To develop radiation hard detectors, particularly for high energy physics studies, radiation damage is being studied in BaF 2 , both undoped and doped with La, Ce, Nd, Eu, Gd and Tm. Some dopants reduce radiation damage. In La doped BaF 2 they reduce the unwanted long lifetime luminescence which interferes with the short-lived fluorescence used to detect particles. Radiation induced coloring is being studied with facilities for making optical measurements before, during and after irradiation with 60 C0 gamma rays. Doses of 10 6 rad, or less, create only ionization induced charge transfer effects since lattice atom displacement damage is negligible at these doses. All crystals studied exhibit color center formation, between approximately 200 and 800 nm, during irradiation and color center decay after irradiation. Thus only measurements made during irradiation show the total absorption present in a radiation field. Both undoped and La doped BaF 2 develop damage at minimum detectable levels in the UV---which is important for particle detectors. For particle detector applications these studies must be extended to high dose irradiations with particles energetic enough to cause lattice atom displacement damage. In principle, the reduction in damage provided by dopants could apply to other applications requiring radiation damage resistant materials

Multi-sensor radiation detector system

International Nuclear Information System (INIS)

Foster, R.G.; Cyboron, R.D.

1975-01-01

The invention is a multi-sensor radiation detection system including a self-powered detector and an ion or fission chamber, preferably joined as a unitary structure, for removable insertion into a nuclear reactor. The detector and chamber are connected electrically in parallel, requiring but two conductors extending out of the reactor to external electrical circuitry which includes a load impedance, a voltage source, and switch means. The switch means are employed to alternately connect the detector and chamber either with th load impedance or with the load impedance and the voltage source. In the former orientation, current through the load impedance indicates flux intensity at the self-powered detector and in the latter orientation, the current indicates flux intensity at the detector and fission chamber, though almost all of the current is contributed by the fission chamber. (auth)

A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization

Energy Technology Data Exchange (ETDEWEB)

Dubecký, F., E-mail: elekfdub@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, Bratislava, SK-84104 (Slovakia); Kindl, D.; Hubík, P. [Institute of Physics CAS, v.v.i., Cukrovarnická 10, CZ-16200 Prague (Czech Republic); Mičušík, M. [Polymer Institute, SAS, Dúbravská cesta 9, Bratislava, SK-84541 (Slovakia); Dubecký, M. [Department of Physics, Faculty of Science, University of Ostrava, 30. dubna 22, CZ-70103 Ostrava 1 (Czech Republic); Boháček, P.; Vanko, G. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, Bratislava, SK-84104 (Slovakia); Gombia, E. [IMEM-CNR, Parco area delle Scienze 37/A, Parma, I-43010 (Italy); Nečas, V. [Faculty of Electrical Engineering and Information Technology, SUT, Ilkovičova 3, Bratislava, SK-81219 (Slovakia); Mudroň, J. [Department of Electronics, Academy of Armed Forces, Demänová 393, Liptovský Mikuláš, SK-03106 (Slovakia)

2017-02-15

Highlights: • Explored were diodes with full-area low/high work function metal contacts on semi-insulating GaAs (S). • The Mg-S-Mg diode is promising for radiation detectors for its low high-field current. • The XPS analysis of Mg-S interface shows presence of MgO instead of Mg metal. - Abstract: We present a comparative study of the symmetric metal-SI GaAs-metal (M-S-M) diodes with full-area contacts on both device sides, in order to demonstrate the effect of contact metal work function in a straightforward way. We compare the conventional high work function Pt contact versus the less explored low work function Mg contact. The Pt-S-Pt, Mg-S-Mg and mixed Mg-S-Pt structures are characterized by the current-voltage measurements, and individual Pt-S and Mg-S contacts are investigated by the X-ray photoelectron spectroscopy (XPS). The transport measurements of Mg-S-Pt structure show a significant current decrease at low bias while the Mg-S-Mg structure shows saturation current at high voltages more than an order of magnitude lower with respect to the Pt-S-Pt reference. The phenomena observed in Mg-containing samples are explained by the presence of insulating MgO layer at the M-S interface, instead of the elementary Mg, as confirmed by the XPS analysis. Alternative explanations of the influence of MgO layer on the effective resistance of the structures are presented. The reported findings have potential applications in M-S-M sensors and radiation detectors based on SI GaAs.

Radiometric analyzer with plural radiation sources and detectors

International Nuclear Information System (INIS)

Arima, S.; Oda, M.; Miyashita, K.; Takada, M.

1977-01-01

A radiometric analyzer for measuring characteristics of a material by radiation comprises a plurality of systems in which each consists of a radiation source and a radiation detector which are the same in number as the number of elements of the molecule of the material and a linear calibration circuit having inverse response characteristics (calibration curve) of the respective systems of detectors, whereby the measurement is carried out by four fundamental rules by operation of the mutual outputs of said detector system obtained through said linear calibration circuit. One typical embodiment is a radiometric analyzer for hydrocarbons which measures the density of heavy oil, the sulfur content and the calorific value by three detector systems which include a γ-ray source (E/sub γ/ greater than 50 keV), a soft x-ray source (Ex approximately 20 keV), and a neutron ray source. 2 claims, 6 figures

Department of Radiation Detectors: Overview

International Nuclear Information System (INIS)

Piekoszewski, J.

1998-01-01

(full text) Work carried out in 1997 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification using Ion and Plasma Beams. Semiconductor detectors: Semiconductor detectors of ionizing radiation are among the basic tools utilized in such fields of research and industry as nuclear physics, high energy physics, medical (oncology) radiotherapy, radiological protection, environmental monitoring, energy dispersive X-ray fluorescence non-destructive analysis of chemical composition, nuclear power industry. The Department all objectives are: - search for new types of detectors, - adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, - producing unique detectors tailored for physics experiments, - manufacturing standard detectors for radiation measuring instruments, - scientific development of the staff. These 1997 objectives were accomplished particularly by: - research on unique detectors for nuclear physics (e.g. transmission type Si(Li) detectors with extremely thin entrance and exit window), - development of technology of high-resistivity (HRSi) silicon detectors and thermoelectric cooling systems (KBN grant), - study of the applicability of industrial planar technology in producing detectors, - manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. In accomplishing of the above, the Department cooperated with interested groups of physicists from our Institute (P-I and P-II Departments), Warsaw University, Warsaw Heavy Ion Laboratory and with some technology Institutes based in Warsaw (ITME, ITE). Some detectors and services have been delivered to customers on a commercial basis. X-Rat tube generators: The Department conducts research on design and technology of producing X-ray generators based on X-ray tubes of special construction. In 1997, work on a special

The design of intelligentized nuclear radiation monitoring detector

International Nuclear Information System (INIS)

Meng Yan; Fang Zongliang; Wen Qilin; Li Lirong; Hu Jiewei; Peng Jing

2010-01-01

This paper introduced an intelligentized nuclear radiation monitoring detector. The detector contains GM tubes, high voltage power supply and MCU circuit. The detector connect terminal via reformative serial port to provide power, accept the data and sent the command. (authors)

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.A.

1991-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

Recent results on the development of radiation-hard diamond detectors

CERN Document Server

Conway, J S; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Dabrowski, W; Da Graca, J; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jamieson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Plano, R; Polesello, P; Prawer, S; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Russ, J; Schnetzer, S; Sciortino, S; Somalwar, S V; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Thomson, G B; Trawick, M; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

1999-01-01

Charged particle detectors made from chemical vapor deposition (CVD) diamond have radiation hardness greatly exceeding that of silicon- based detectors. The CERN-based RD42 Collaboration has developed and tested CVD diamond microstrip and pixel detectors with an eye to their application in the intense radiation environment near the interaction region of hadron colliders. This paper presents recent results from tests of these detectors. (4 refs).

Radiation damage: special reference to gas filled radiation detectors

International Nuclear Information System (INIS)

Gaur, Sudha; Joshi, Pankaj Kumar; Rathore, Shakuntla

2012-01-01

Radiation damage is a term associated with ionizing radiation. In gas filled particle detectors, radiation damage to gases plays an important role in the device's ageing, especially in devices exposed to high intensity radiation, e.g. detector for the large hadrons collide. Ionization processes require energy above 10 eV, while splitting covalent bond in molecules and generating free radical require only 3-4 eV. The electrical discharges initiated by the ionization event by the particles result in plasma populated by large amount of free radical. The highly reactive free radical can recombine back to original molecules, or initiate a chain of free radical polymerization reaction with other molecules, yielding compounds with increasing molecular weight. These high molecular weight compounds then precipitate from gases phase, forming conductive or non-conductive deposits on the electrodes an insulating surfaces of the detector and distorting it's response. Gases containing hydrocarbon quenchers, e.g. argon-methane, are typically sensitive to ageing by polymerization; addition of oxygen tends to lower the ageing rates. Trace amount of silicon oils, present form out gassing of silicon elastomers and especially from traces of silicon lubricant tend to decompose and form deposits of silicon crystals on the surfaces. Gases mixture of argon (or xenon) with CO 2 and optimally also with 2-3 % of oxygen are highly tolerant to high radiation fluxes. The oxygen is added as noble gas with CO 2 has too high transparency for high energy photons; ozone formed from the oxygen is a strong absorber of ultra violet photons. Carbon tetra fluoride can be used as a component of the gas for high-rate detectors; the fluorine radical produced during the operation however limit the choice of materials for the chambers and electrodes (e.g. gold electrodes are required, as the fluorine radicals attack metals, forming fluorides). Addition of carbon tetra fluoride can however eliminate the

HgCdTe photovoltaic detectors on Si substrates

International Nuclear Information System (INIS)

Zanio, K.R.; Bean, R.C.

1988-01-01

HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents unintentional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered. 40 references

Detection of nuclear radiations; Detectores de radiaciones nucleares

Energy Technology Data Exchange (ETDEWEB)

Tanarro Sanz, A

1959-07-01

A summary of the lectures about the ordinary detectors of nuclear radiations given by the author in the Courses of Introduction to Nuclear Engineering held at the JEN up to the date of publication is given. Those lectures are considered to be a necessary introduction to Nuclear Instrumentation and Applied electronics to Nuclear Engineering so it has been intent to underline those characteristics of radiation detectors that must be taken in consideration in choosing or designing the electronic equipment associated to them in order to take advantage of each detector possibilities. (Author) 8 refs.

ALICE Transition Radiation Detector

CERN Multimedia

Pachmayer, Y

2013-01-01

The Transition Radiation Detector (TRD) is the main electron detector in ALICE. In conduction with the TPC and the ITS, it provides the necessary electron identification capability to study: - Production of light and heavy vector mesons as well as the continuum in the di-electron channel, - Semi leptonic decays of hadrons with open charm and open beauty via the single-electron channel using the displaced vertex information provided by the ITS, - Correlated DD and BB pairs via coincidences of electrons in the central barrel and muons in the forward muon arm, - Jets with high Pτ tracks in one single TRD stack.

Application of Rossi-type detectors in radiation protection

International Nuclear Information System (INIS)

Menzel, H.G.; Hartmann, G.H.; Krauss, O.; Deutsches Krebsforschungszentrum, Heidelberg

1983-01-01

Rossi-type detectors can measure the energy dose and the pertinent quality factor simultaneously and independent of the radiation. This is possible because these detectors are able to measure the energy as well as the LET distribution of the measured radiation. The quality factor is then calculated on this basis. The principle of measurement, problems and solutions are discussed. (orig./HP) [de

Diamond and silicon pixel detectors in high radiation environments

Energy Technology Data Exchange (ETDEWEB)

Tsung, Jieh-Wen

2012-10-15

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

Diamond and silicon pixel detectors in high radiation environments

International Nuclear Information System (INIS)

Tsung, Jieh-Wen

2012-10-01

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10 16 particles per cm 2 , which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10 15 particles per cm 2 .

Radiation and detectors introduction to the physics of radiation and detection devices

CERN Document Server

Cerrito, Lucio

2017-01-01

This textbook provides an introduction to radiation, the principles of interaction between radiation and matter, and the exploitation of those principles in the design of modern radiation detectors. Both radiation and detectors are given equal attention and their interplay is carefully laid out with few assumptions made about the prior knowledge of the student. Part I is dedicated to radiation, broadly interpreted in terms of energy and type, starting with an overview of particles and forces, an extended review of common natural and man-made sources of radiation, and an introduction to particle accelerators. Particular attention is paid to real life examples, which place the types of radiation and their energy in context. Dosimetry is presented from a modern, user-led point of view, and relativistic kinematics is introduced to give the basic knowledge needed to handle the more formal aspects of radiation dynamics and interaction. The explanation of the physics principles of interaction between radiation an...

Department of Radiation Detectors: Overview

International Nuclear Information System (INIS)

Piekoszewski, J.

1999-01-01

Full text: Work carried out in 1998 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. SEMICONDUCTOR DETECTORS: Semiconductor detectors of ionizing radiation are among the basic tools utilized in such fields of research and industry as nuclear physics, high energy physics, medical (oncology) radiotherapy, radiological protection, environmental monitoring, energy dispersive X-ray fluorescence non-destructive analysis of chemical composition, nuclear power industry. The departmental objectives are: a search for new types of detectors; producing unique detectors tailored for physics experiments; manufacturing standard detectors for radiation measuring instruments; scientific development of the staff. These objectives were accomplished in 1998 particularly by: research on unique thin silicon detectors for identification of particles in E-ΔE telescopes, modernization of technology of manufacturing Ge(Li) detectors capable of detecting broader range of gamma energies, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. In accomplishment of the above the Department co-operated with groups of physicists from IPJ, PAN Institute of Physics (Warsaw), and with some technology Institutes based in Warsaw (ITME, ITE). Some detectors and services have been delivered to customers on a commercial basis. X-Ray TUBE GENERATORS: The Department conducts research on design and technology of manufacturing X-ray generators as well as on imaging and dosimetry of X-ray beams. Various models of special construction X-ray tubes and their power supplies are under construction. In 1998 work concentrated on: completing laboratory equipment for manufacturing X-ray tubes and their components, developing technology of manufacturing X-ray tubes and their components, completing a laboratory set-up with

MCNPX calculations for electron irradiated semiconductor detectors

International Nuclear Information System (INIS)

Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

2014-01-01

This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

Simple dynamic electromagnetic radiation detector

Science.gov (United States)

Been, J. F.

1972-01-01

Detector monitors gamma dose rate at particular position in a radiation facility where a mixed neutron-gamma environment exists, thus determining reactor power level changes. Device also maps gamma intensity profile across a neutron-gamma beam.

Radiation effects in polymers for plastic scintillation detectors

International Nuclear Information System (INIS)

Pla-Dalmau, A.; Bross, A.D.; Hurlbut, C.R.; Moser, S.W.

1994-01-01

Recent developments in both scintillating plastic optical fibers and photon detection devices have spawned new applications for plastic scintillator detectors. This renewed attention has encouraged research that addresses the radiation stability of plastic scintillators. The optical quality of the polymer degrades with exposure to ionizing radiation and thus the light yield of the detector decreases. A complete understanding of all the mechanisms contributing to this radiation-induced degradation of the polymer can lead to techniques that will extend the radiation stability of these materials. Various radiation damage studies have been performed under different atmospheres and dose rates. Currently, the use of additives to preserve the optical properties of the polymer matrix under radiation is being investigated. The authors discuss the effect of certain antioxidants, plasticizers, and cross-linking agents on the radiation resilience of plastic scintillators

Gamma-ray detectors for intelligent, hand-held radiation monitors

International Nuclear Information System (INIS)

Fehlau, P.E.

1983-01-01

Small radiation detectors based on HgI 2 , bismuth germanate (BGO), plastic, or NaI(Tl) detector materials were evaluated for use in small, lighweight radiation monitors. The two denser materials, HgI 2 and BGO, had poor resolution at low-energy and thus performed less well than NaI(Tl) in detecting low-energy gamma rays from bare, enriched uranium. The plastic scintillator, a Compton recoil detector, also performed less well at low gamma-ray energy. Two small NaI(Tl) detectors were suitable for detecting bare uranium and sheilded plutonium. One became part of a new lightweight hand-held monitor and the other found uses as a pole-mounted detector for monitoring hard-to-reach locations

Use of HgI2 as gamma radiation detector

International Nuclear Information System (INIS)

Perez Morales, J.M.

1993-01-01

The Mercuric Iodide (HgI 2 ) has become one of the most promising room temperature semiconductors for the construction of X and gamma radiation detectors. The classical methods of spectroscopy have not demonstrated to achieve optimum results with HgI 2 detectors, mainly due to its particular carrier transport properties. Several alternative spectroscopic methods developed in the last ten years are presented and commented, selecting for a complete study one of them: 'The Partial Charge Collection Method'. The transport properties of the carriers generated by the radiation in the detector is specially important for understanding the spectroscopic behaviour of the HgI 2 detectors. For a rigorous characterization of this transport, it has been studied a digital technique for the analysis of the electric pulses produced by the radiation. Theoretically, it has been developed a Monte Carlo simulation of the radiation detection and the electronic signal treatment processes with these detectors in the energy range of 60-1300 KeV. These codes are applied to the study of the The Partial Charge Collection Method and its comparison with gaussian methods. Experimentally, this digital techniques is used for the study of the transport properties of thin HgI 2 detectors. Special interest is given to the contribution of the slower carriers, the holes, obtaining some consequent of spectroscopic interest. Finally, it is presented the results obtained with the first detectors grown and mounted in CIEMAT with own technology. (author). 129 ref

Electromagnetic disturbance neutralizing radiation detector

International Nuclear Information System (INIS)

Gripentog, W.G.

1975-01-01

A radiation detector of the Neher-White type is described which automatically neutralizes induced negative charges on the electrometer tube control grid which shut off the electrometer tube. The detector includes means for establishing a voltage of one polarity in response to plate current and voltage of opposite polarity in response to an absence of plate current and means for connecting the control grid to a reference potential for draining the negative charge in response to the voltage of opposite polarity. (author)

Solid-state radiation detectors for active personal dosimetry and radiations source tracking

International Nuclear Information System (INIS)

Talpalariu, Corneliu; Talpalariu, Jeni; Matei, Corina; Lita, Ioan; Popescu, Oana

2010-01-01

We report on the design of the readout electronics using PIN diode radiation detector of 5 mm thickness for nuclear safety and active personal dosimetry. Our effort consisted in designing and fabricating the electronics to reflect the needs of gamma radiations dosimetry and hybrids PIN diode arrays for charged particle detectors. We report results obtained during testing and characterizing the new devices in gamma fields, operating at room temperature. There were determined the energy spectrum resolution, radiation hardness and readout rate. Also, data recording methods and parallel acquisition problems from a transducer matrix are presented. (authors)

Radiation response issues for infrared detectors

Science.gov (United States)

Kalma, Arne H.

1990-01-01

Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

Solid-state radiation detectors technology and applications

CERN Document Server

2015-01-01

The book discusses the current solid state material used in advance detectors manufacturing and their pros and cons and how one can tailor them using different techniques, to get the maximum performance. The book is application oriented to radiation detectors for medical, X and gamma rays application, and good reference with in-depth discussion of detector's physics as it relates to medical application tailored for engineers and scientists.

Photovoltaic radiation detector element

International Nuclear Information System (INIS)

Agouridis, D.C.

1980-01-01

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips

Planned studies of charge collection in non-uniformly irradiated Si and GaAs detectors

International Nuclear Information System (INIS)

Rosenfeld, A.; Reinhard, M.; Carolan, M.; Kaplan, G.; Lerch, M.; Alexiev, D.

1995-01-01

The aim of this project is to study the time and amplitude characteristics of silicon ion-implanted detectors non-uniformly irradiated with fast neutrons in order to predict their radiation behaviour in the LHC and space. It is expected in such detectors increases of the charge deficit due to trapping by large scale traps and transient time increases due to the reduction of the mobility. The theoretical model will be modified to describe the charge kinetics in the electrical field of the detector created by a non uniform space charge distribution. Experimental confirmation techniques are needed to develop non uniform predictable damage of silicon detectors using fast neutron sources (accelerators, reactors) and to study peculiarities of the charge transport in different parts of the detector. In parallel to experimental research will be started the theoretical development of the charge transport model for non-uniform distribution of space charge in the depletion layer (Neff). The model will include the linear distribution of Neff(y) along the detector as well as the change of sign of Neff (conversion from n to p type of silicon) inside the detector

UTILIZATION OF PHOSWICH DETECTORS FOR SIMULTANEOUS, MULTIPLE RADIATION DETECTION

International Nuclear Information System (INIS)

Miller, William H.; Manuel Diaz de Leon

2003-01-01

A phoswich radiation detector is comprised of a phosphor sandwich in which several different phosphors are viewed by a common photomultiplier. By selecting the appropriate phosphors, this system can be used to simultaneously measure multiple radiation types (alpha, beta, gamma and/or neutron) with a single detector. Differentiation between the signals from the different phosphors is accomplished using digital pulse shape discrimination techniques. This method has been shown to result in accurate discrimination with highly reliable and versatile digital systems. This system also requires minimal component count (i.e. only the detector and a computer for signal processing). A variety of detectors of this type have been built and tested including: (1) a triple phoswich system for alpha/beta/gamma swipe counting, (2) two well-type detectors for measuring low levels of low energy photons in the presence of a high energy background, (3) a large area detector for measuring beta contamination in the presence of a photon background, (4) another large area detector for measuring low energy photons from radioactive elements such as uranium in the presence of a photon background. An annular geometry, triple phoswich system optimized for measuring alpha/beta/gamma radiation in liquid waste processing streams is currently being designed

UTILIZATION OF PHOSWICH DETECTORS FOR SIMULTANEOUS, MULTIPLE RADIATION DETECTION

Energy Technology Data Exchange (ETDEWEB)

William H. Miller; Manuel Diaz de Leon

2003-04-15

A phoswich radiation detector is comprised of a phosphor sandwich in which several different phosphors are viewed by a common photomultiplier. By selecting the appropriate phosphors, this system can be used to simultaneously measure multiple radiation types (alpha, beta, gamma and/or neutron) with a single detector. Differentiation between the signals from the different phosphors is accomplished using digital pulse shape discrimination techniques. This method has been shown to result in accurate discrimination with highly reliable and versatile digital systems. This system also requires minimal component count (i.e. only the detector and a computer for signal processing). A variety of detectors of this type have been built and tested including: (1) a triple phoswich system for alpha/beta/gamma swipe counting, (2) two well-type detectors for measuring low levels of low energy photons in the presence of a high energy background, (3) a large area detector for measuring beta contamination in the presence of a photon background, (4) another large area detector for measuring low energy photons from radioactive elements such as uranium in the presence of a photon background. An annular geometry, triple phoswich system optimized for measuring alpha/beta/gamma radiation in liquid waste processing streams is currently being designed.

Radiation effects on II-VI compound-based detectors

CERN Document Server

Cavallini, A; Dusi, W; Auricchio, N; Chirco, P; Zanarini, M; Siffert, P; Fougeres, P

2002-01-01

The performance of room temperature CdTe and CdZnTe detectors exposed to a radiation source can be strongly altered by the interaction of the ionizing particles and the material. Up to now, few experimental data are available on the response of II-VI compound detectors to different types of radiation sources. We have carried out a thorough investigation on the effects of gamma-rays, neutrons and electron irradiation both on CdTe : Cl and Cd sub 0 sub . sub 9 Zn sub 0 sub . sub 1 Te detectors. We have studied the detector response after radiation exposure by means of dark current measurements and of quantitative spectroscopic analyses at low and medium energies. The deep traps present in the material have been characterized by means of PICTS (photo-induced current transient spectroscopy) analyses, which allow to determine the trap apparent activation energy and capture cross-section. The evolution of the trap parameters with increasing irradiation doses has been monitored for all the different types of radiati...

Fast infrared detectors for beam diagnostics with synchrotron radiation

International Nuclear Information System (INIS)

Bocci, A.; Marcelli, A.; Pace, E.; Drago, A.; Piccinini, M.; Cestelli Guidi, M.; De Sio, A.; Sali, D.; Morini, P.; Piotrowski, J.

2007-01-01

Beam diagnostic is a fundamental constituent of any particle accelerators either dedicated to high-energy physics or to synchrotron radiation experiments. All storage rings emit radiations. Actually they are high brilliant sources of radiation: the synchrotron radiation emission covers from the infrared range to the X-ray domain with a pulsed structure depending on the temporal characteristics of the stored beam. The time structure of the emitted radiation is extremely useful as a tool to perform time-resolved experiments. However, this radiation can be also used for beam diagnostic to determine the beam stability and to measure the dimensions of the e - or e + beam. Because of the temporal structure of the synchrotron radiation to perform diagnostic, we need very fast detectors. Indeed, the detectors required for the diagnostics of the stored particle bunches at third generation synchrotron radiation sources and FEL need response times in the sub-ns and even ps range. To resolve the bunch length and detect bunch instabilities, X-ray and visible photon detectors may be used achieving response times of a few picoseconds. Recently, photon uncooled infrared devices optimized for the mid-IR range realized with HgCdTe semiconductors allowed to obtain sub-nanosecond response times. These devices can be used for fast detection of intense IRSR sources and for beam diagnostic. We present here preliminary experimental data of the pulsed synchrotron radiation emission of DAΦNE, the electron positron collider of the LNF laboratory of the INFN, performed with new uncooled IR detectors with a time resolution of a few hundreds of picoseconds

Burst annealing of high temperature GaAs solar cells

Science.gov (United States)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Burst annealing of high temperature GaAs solar cells

International Nuclear Information System (INIS)

Brothers, P.R.; Horne, W.E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

Assessment of integrated solar ultraviolet radiation by PM-355 detectors

International Nuclear Information System (INIS)

Abu-Jarad, F.; Al-Jarallah, M.I.; Elhadidy, M.A.; Shaahid, S.M.; Fazal-ur-Rehman

2000-01-01

The increase in environmental solar UV radiation due to depletion of ozone layer is a recent challenge to human health (skin cancer and eye effects) in countries having clear skies. Therefore, applying integrated, passive and inexpensive techniques to assess solar UV radiation is very much essential. Measurements of environmental solar UV radiation in Dhahran, Saudi Arabia area were carried out for a period of two months in the summer period in 1996 using two techniques in parallel namely: passive nuclear track detectors and active solar UV radiometers. Some of the nuclear track detectors were mounted in different conditions such as: under shadow band, on solar tracking mechanism following the solar rays. Others were mounted on perpendicular, tilted and horizontal surfaces in sunlight. All detectors were attached to a wooden background of the same thickness (0.5 cm) to eliminate interference of the heat effect of various support materials and have uniformity of the support materials. The assessment was carried out for different periods extending from two to nine weeks continuously. The investigated period covered the hottest months in Saudi Arabia (July and August) when the sky was clear of clouds. The results indicate linear correlation between alpha track diameters and the integrated exposure to solar UV as measured by the solar UV radiometer for all nuclear track detector positions and orientations. The highest slope has been observed for the detectors placed on solar tracking mechanism following the solar rays and the lowest from detectors oriented under the shadow band on horizontal position (measuring the diffused UV radiation only). The results show that most of the measured UV radiation (60%) were from the diffused UV radiation. The characteristics of the upper layer of the detectors are changed after chemical etching very quickly, with increase in the exposure time to UV solar radiation at certain orientation. The results encourage the use of nuclear track

Assessment of integrated solar ultraviolet radiation by PM-355 detectors

Energy Technology Data Exchange (ETDEWEB)

Abu-Jarad, F.; Al-Jarallah, M.I.; Elhadidy, M.A.; Shaahid, S.M.; Fazal-ur-Rehman

2000-06-01

The increase in environmental solar UV radiation due to depletion of ozone layer is a recent challenge to human health (skin cancer and eye effects) in countries having clear skies. Therefore, applying integrated, passive and inexpensive techniques to assess solar UV radiation is very much essential. Measurements of environmental solar UV radiation in Dhahran, Saudi Arabia area were carried out for a period of two months in the summer period in 1996 using two techniques in parallel namely: passive nuclear track detectors and active solar UV radiometers. Some of the nuclear track detectors were mounted in different conditions such as: under shadow band, on solar tracking mechanism following the solar rays. Others were mounted on perpendicular, tilted and horizontal surfaces in sunlight. All detectors were attached to a wooden background of the same thickness (0.5 cm) to eliminate interference of the heat effect of various support materials and have uniformity of the support materials. The assessment was carried out for different periods extending from two to nine weeks continuously. The investigated period covered the hottest months in Saudi Arabia (July and August) when the sky was clear of clouds. The results indicate linear correlation between alpha track diameters and the integrated exposure to solar UV as measured by the solar UV radiometer for all nuclear track detector positions and orientations. The highest slope has been observed for the detectors placed on solar tracking mechanism following the solar rays and the lowest from detectors oriented under the shadow band on horizontal position (measuring the diffused UV radiation only). The results show that most of the measured UV radiation (60%) were from the diffused UV radiation. The characteristics of the upper layer of the detectors are changed after chemical etching very quickly, with increase in the exposure time to UV solar radiation at certain orientation. The results encourage the use of nuclear track

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Low dose radiation damage effects in silicon strip detectors

International Nuclear Information System (INIS)

Wiącek, P.; Dąbrowski, W.

2016-01-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Low dose radiation damage effects in silicon strip detectors

Science.gov (United States)

Wiącek, P.; Dąbrowski, W.

2016-11-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

The pin detector - a simple, robust, cheap and effective nuclear radiation detector

International Nuclear Information System (INIS)

Bateman, J.E.

1984-01-01

The development of a series of radiation detectors bases on the point anode is reported. Using readily available preformed pins from a variety of electrical connectors as the anodes, a family of devices has been created with useful properties as X-ray detectors, radiation monitors and internal beta counters. A wide variety of gas fillings can be used, argon/CH 4 premix being the most convenient. The structures are robust and call for no precision alignments so keeping costs down. Performance of the devices in respect of sensitivity and pulse height resolution is comparable to that of conventional wire counters. (author)

Isotope detectors and radiation detectors for test reliability techniqui. A preliminary project

International Nuclear Information System (INIS)

Christell, R.

1977-03-01

A survey is done of small and simple components for use as detectors for ionizing radiation, as well as different methods and components producing images of radiation fields based on position sensitive detectors. The investigation has resulted in a system for detection of stones in wood. In a second project isotope excited x ray fluorescence has been used for analysis of material resulting from wear of mechanical components. A facility for analysis has been built and test analysis has been performed. Methods for continous wear control with possibility to forecast breakdowns have been investigated. (K.K.)

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15} n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside...

Modeling radiation damage to pixel sensors in the ATLAS detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15}n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside ...

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Rossini, Lorenzo; The ATLAS collaboration

2018-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High- Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for basic...

Superconducting NbN detectors for synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Semenov, Alexei; Richter, Heiko; Huebers, Heinz-Wilhelm [DLR, Instiute of Planetary Research, Berlin (Germany); Ilin, Konstantin; Siegel, Michael [Institute of Micro- and Nanoelectronic Systems, University of Karlsruhe (Germany)

2009-07-01

We present development of a special type of hot-electron bolometers that is designed to optimally detect pulsed synchrotron radiation in the terahertz frequency range. The enlarged log-spiral antenna makes it possible to sense the low-frequency part of the spectrum in coherent and non-coherent regime. The device follows the layout of a typical HEB mixer. The radiation is coupled quasioptically with the 6-mm elliptical silicon lens. The bolometer has the noise equivalent power 2 nW per square root Hz and responds to a few picoseconds long radiation pulse with the electric pulse having full width at half maximum of 160 ps. We present results obtained with this type of detector at different synchrotron facilities and discuss possible improvements of the detector performance.

Radiation flaw detector for testing non-uniform surface bodies of revolution

International Nuclear Information System (INIS)

Valevich, M.I.

1984-01-01

Radiation flaw detector for testing bodies of revolution with non-uniform surface, welded joints, etc., based on spatial filtration and differentiation of ionizing radiation flux has been described. The calculation of the most important unit of flaw detector - integrators - is made. Experimental studies of the sensitivity have shown, that the radiation flaw detector can be used for rapid testing of products with the sensitivity comparable with the sensitivity of radiographic testing of steel

Fabrication of radiation detector using PbI2 crystals

International Nuclear Information System (INIS)

Shoji, T.; Ohba, K.; Suehiro, T.; Hiratate, Y.

1995-01-01

Radiation detectors have been fabricated from lead iodide (PbI 2 ) crystals grown by two methods: zone melting and Bridgman methods. In response characteristics of the detector fabricated from crystals grown by the zone melting method, a photopeak for γ-rays from an 241 Am source (59.5 KeV) has been clearly observed with applied detector bias of 500 V at room temperature. The hole drift mobility is estimated to be about 5.5 cm 2 /Vs from measurement of pulse rise time for 5.48 MeV α-rays from 241 Am. By comparing the detector bias versus saturated peak position of the PbI 2 detector with that of CdTe detector, the average energy for producing electron-hole pairs is estimated to be about 8.4 eV for the PbI 2 crystal. A radiation detector fabricated from PbI 2 crystals grown by the Bridgman method, however, exhibited no response for γ-rays

Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments

International Nuclear Information System (INIS)

M. J. May; C. Halvorson; T. Perry; F. Weber; P. Young; C. Silbernagel

2008-01-01

Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires X-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different X-ray sensitive Photoconductive Detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using X-ray light from a synchrotron light source are presented

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface

International Nuclear Information System (INIS)

Wu, Xiaojun; Xu, Xinlong; Lu, Xinchao; Wang, Li

2013-01-01

Terahertz (THz) emission from octadecanthiol (ODT) passivated (1 0 0) surface of the semi-insulating GaAs was measured, and compared with those from the native oxidized and the fresh surfaces. It was shown that the self-assembled ODT monolayer can stabilize the GaAs (1 0 0) surface, and maintain a THz surface emission 1.4 times as efficient as the native oxidized surface under equal conditions. Surface passivation can reduce the built-in electric field in the depletion region of the GaAs (1 0 0), resulting in the suppression of the THz radiation to a different extent. Oxidation of GaAs surface reduces the THz amplitude mainly in the low-frequency region. These results indicate that GaAs can be made a more effective THz source by choosing molecular passivation technique. Conversely, the THz emission features such as polarity, amplitude, and phase from molecule-passivated surfaces may be used to characterize the attached molecules.

Status and trends of solid state track detector use in radiation protection monitoring

International Nuclear Information System (INIS)

Doerschel, B.

1980-01-01

The characteristic properties of solid state track detectors allow them to be used for determining the radiation fields of charged and uncharged particles and, consequently, for solving some problems involved in radiation protection monitoring. Aptitude of various detector materials is investigated on the basis of the track formation mechanism taking into account the properties of the particles to be detected. Use of these detectors in radiation protection monitoring presumes appropriate methods of intensifying the latent tracks, which are discussed as a function of various physical parameters. Readout methods of solid state track detectors are based on variations in detector properties determined by number and size of particle tracks in the detector. The choice of a special readout method, among other things, depends on the purpose, detector material, and pretreatment of the detectors. The most prospective methods are described and investigated with respect to their possible use in various fields of radiation protection monitoring. The trends of development of the application of solid state track detectors in radiation protection monitoring are discussed, using some typical applications as examples. (author)

Technology development of 3D detectors for high energy physics and medical imaging

CERN Document Server

Pellegrini, G

2003-01-01

This thesis is concerned with the fabrication, characterisation and simulation of 3D semiconductor detectors. Due to their geometry, these detectors have more efficient charge collection properties than current silicon and gallium arsenide planar detectors. The unit cell of these detectors is hexagonal with a central anode surrounded by six cathode contacts. This geometry gives a uniform electric field with the maximum drift and depletion distance set by electrode spacing, 85m in this project, rather than detector thickness, as in the case of planar detectors (typically 100-300m). This results in lower applied biases (35-40 V in the work of this project) compared to >200 V in typical planar detectors. The reduction in bias offers the possibility of improved detector operation in the presence of bulk radiation damage as lower voltage reduces leakage current which limits the signal to noise ratio and hence the overall detector efficiency. In this work, 3D detectors realised in Si, GaAs and SiC have ...

Performance of semiconductor radiation sensors for simple and low-cost radiation detector

International Nuclear Information System (INIS)

Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

2008-01-01

In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

Silicon detectors for x and gamma-ray with high radiation resistance

International Nuclear Information System (INIS)

Cimpoca, Valerica; Popescu, Ion V.; Ruscu, Radu

2001-01-01

Silicon detectors are widely used in X and gamma-ray spectroscopy for direct detection or coupled with scintillators in high energy nuclear physics (modern collider experiments are representative), medicine and industrial applications. In X and gamma dosimetry, a low detection limit (under 6 KeV) with silicon detectors becomes available. Work at the room temperature is now possible due to the silicon processing evolution, which assures low reverse current and high life time of carriers. For several years, modern semiconductor detectors have been the primary choice for the measurement of nuclear radiation in various scientific fields. Nowadays the recently developed high resolution silicon detectors found their way in medical applications. As a consequence many efforts have been devoted to the development of high sensitivity and radiation hardened X and gamma-ray detectors for the energy range of 5 - 150 keV. The paper presents some results concerning the technology and behaviour of X and Gamma ray silicon detectors used in physics research, industrial and medical radiography. The electrical characteristics of these detectors, their modification after exposure to radiation and the results of spectroscopic X and Gamma-ray measurements are discussed. The results indicated that the proposed detectors enables the development of reliable silicon detectors to be used in controlling the low and high radiation levels encountered in a lot of application

Radiation-hard semiconductor detectors for SuperLHC

CERN Document Server

Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

2005-01-01

An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Rossini, Lorenzo; The ATLAS collaboration

2018-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm^2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for b...

Modeling radiation damage to pixel sensors in the ATLAS detector

Science.gov (United States)

Ducourthial, A.

2018-03-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC) . As the closest detector component to the interaction point, these detectors will be subject to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC) [1], the innermost layers will receive a fluence in excess of 1015 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is essential in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects on the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside early studies with LHC Run 2 proton-proton collision data.

Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor

International Nuclear Information System (INIS)

Boardman, D.A.; Sellin, P.J.

2001-01-01

A new design of monolithic GaAs pixel detector is proposed for medical and synchrotron applications. In this device a semi-insulating GaAs wafer will be used as both the detector element and the substrate for the integrated charge readout matrix. The charge readout matrix consists of High Electron Mobility Transistors (HEMTs), which are grown epitaxially onto the GaAs substrate. Experimental characterisation of HEMTs has been carried out and their suitability for the proposed imaging device is assessed. Temperature measurements on initial devices showed the threshold voltage to be stable from room temperature down to -15 degree sign C. HEMT designs with lower leakage current that operate in enhancement mode have been fabricated and modelled using the Silvaco simulation package. These optimised devices have been fabricated using a gate recess, and exhibit enhancement mode operation and significantly reduced gate leakage currents

Study of radiation detectors response in standard X, gamma and beta radiation standard beams

International Nuclear Information System (INIS)

Nonato, Fernanda Beatrice Conceicao

2010-01-01

The response of 76 Geiger-Mueller detectors, 4 semiconductor detectors and 34 ionization chambers were studied. Many of them were calibrated with gamma radiation beams ( 37 Cs and 60 Co), and some of them were tested in beta radiation ( 90 Sr+ 9' 0Y e 204 Tl) and X radiation (N-60, N-80, N-100, N-150) beams. For all three types of radiation, the calibration factors of the instruments were obtained, and the energy and angular dependences were studied. For beta and gamma radiation, the angular dependence was studied for incident radiation angles of 0 deg and +- 45 deg. The curves of the response of the instruments were obtained over an angle interval of 0 deg to +- 90 deg, for gamma, beta and X radiations. The calibration factors obtained for beta radiation were compared to those obtained for gamma radiation. For gamma radiation, 24 of the 66 tested Geiger-Mueller detectors presented results for the energy dependence according to international recommendation of ISO 4037-2 and 56 were in accordance with the Brazilian ABNT 10011 recommendation. The ionization chambers and semiconductors were in accordance to national and international recommendations. All instruments showed angular dependence less than 40%. For beta radiation, the instruments showed unsatisfactory results for the energy dependence and angular dependence. For X radiation, the ionization chambers presented results for energy dependence according to the national recommendation, and the angular dependence was less than 40%. (author)

Performance And Radiation Hardness Of The Atlas/sct Detector Module

CERN Document Server

Eklund, L

2003-01-01

The ATLAS experiment is a general purpose experiment being constructed at the Large Hadron Collider (LHC) at FERN, Geneva. ATLAS is designed to exploit the full physics potential of LHC, in particular to study topics concerning the Higgs mechanism, Super-symmetry and CP violation. The cross sections for the processes under study are extremely small, requiring very high luminosity colliding beams. The Semiconductor Tracker (SCT) is an essential part of the Inner Detector tracking system of ATLAS. The active elements of the SCT is 4088 detector modules, tiled on four barrel cylinders and eighteen endcap disks. As a consequence of the high luminosity, the detector modules will operate in a harsh radiation environment. This thesis describes work concerning radiation hardness, beam test performance and methods for production testing of detector modules. The radiation hardness studies have been focused on the electrical performance of the front-end ASIC and the detector module. The results have identified features ...

Development of radiation tolerant semiconductor detectors for the Super-LHC

CERN Document Server

Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

RD50 Collaboration overview: Development of new radiation hard detectors

Energy Technology Data Exchange (ETDEWEB)

Kuehn, S., E-mail: susanne.kuehn@cern.ch

2016-07-11

Silicon sensors are widely used as tracking detectors in high energy physics experiments. This results in several specific requirements like radiation hardness and granularity. Therefore research for highly performing silicon detectors is required. The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for application in high luminosity collider experiments. Extensive research is ongoing in different fields since 2001. The collaboration investigates both defect and material characterization, detector characterization, the development of new structures and full detector systems. The report gives selected results of the collaboration and places an emphasis on the development of new structures, namely 3D devices, CMOS sensors in HV technology and low gain avalanche detectors. - Highlights: • The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for high luminosity collider experiments. • The collaboration investigates defect, material and detector characterization, the development of new structures and full detector systems. • Results of measured data of n-in-p type sensors allow recommendations for silicon tracking detectors at the HL-LHC. • The charge multiplication effect was investigated to allow its exploitation and resulted in new structures like LGAD sensors. • New sensor types like slim and active edge sensors, 3D detectors, and lately HVCMOS devices were developed in the active collaboration.

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

A large area transition radiation detector for the NOMAD experiment

Science.gov (United States)

Bassompierre, G.; Bermond, M.; Berthet, M.; Bertozzi, T.; Détraz, C.; Dubois, J.-M.; Dumps, L.; Engster, C.; Fazio, T.; Gaillard, G.; Gaillard, J.-M.; Gouanère, M.; Manola-Poggioli, E.; Mossuz, L.; Mendiburu, J.-P.; Nédélec, P.; Palazzini, E.; Pessard, H.; Petit, P.; Petitpas, P.; Placci, A.; Sillou, D.; Sottile, R.; Valuev, V.; Verkindt, D.; Vey, H.; Wachnik, M.

1998-02-01

A transition radiation detector to identify electrons at 90% efficiency with a rejection factor against pions of 10 3 on an area of 2.85 × 2.85 m 2 has been constructed for the NOMAD experiment. Each of its 9 modules includes a 315 plastic foil radiator and a detector plane of 176 vertical straw tubes filled with a xenon-methane gas mixture. Details of the design, construction and operation of the detector are given.

A large area transition radiation detector for the NOMAD experiment

CERN Document Server

Bassompierre, Gabriel; Berthet, M; Bertozzi, T; Détraz, C; Dubois, J M; Dumps, Ludwig; Engster, Claude; Fazio, T; Gaillard, G; Gaillard, Jean-Marc; Gouanère, M; Manola-Poggioli, E; Mossuz, L; Mendiburu, J P; Nédélec, P; Palazzini, E; Pessard, H; Petit, P; Petitpas, P; Placci, Alfredo; Sillou, D; Sottile, R; Valuev, V Yu; Verkindt, D; Vey, H; Wachnik, M

1997-01-01

A transition radiation detector to identify electrons at 90% efficiency with a rejection factor against pions of 10 3 on an area of 2.85 × 2.85 m 2 has been constructed for the NOMAD experiment. Each of its 9 modules includes a 315 plastic foil radiator and a detector plane of 176 vertical straw tubes filled with a xenon-methane gas mixture. Details of the design, construction and operation of the detector are given.

CONCORD: comparison of cosmic radiation detectors in the radiation field at aviation altitudes

Czech Academy of Sciences Publication Activity Database

Meier, M.; Trompier, F.; Ambrožová, Iva; Kubančák, Ján; Matthia, D.; Ploc, Ondřej; Santen, N.; Wirtz, M.

2016-01-01

Roč. 6, MAY (2016), A24 ISSN 2115-7251 Institutional support: RVO:61389005 Keywords : aviation * radiation exposure of aircrew * comparison of radiation detectors * galactic cosmic radiation * ambient dose equivalent Subject RIV: BN - Astronomy, Celestial Mechanics, Astrophysics Impact factor: 2.446, year: 2016

The radiation environment in the ATLAS inner detector

CERN Document Server

Dawson, I

2000-01-01

The radiation environment in the inner detector has been simulated using the particle transport program FLUKA with a recent description of the ATLAS experiment. Given in this paper are particle fluences and doses at positions relevant to the three inner detector subsystems; the Pixel, SCT and TRT detectors. In addition, studies are reported on in which (1) information concerning the optimization of the inner detector neutron-moderators is obtained and (2) the impact of including additional vacuum-equipment material is assessed. (19 refs).

Radiation detector device for measuring ionizing radiation

International Nuclear Information System (INIS)

Brake, D. von der.

1983-01-01

The device contains a compensating filter circuit, which guarantees measurement of the radiation dose independent of the energy or independent of the energy and direction. The compensating filter circuit contains a carrier tube of a slightly absorbing metal with an order number not higher than 35, which surrounds a tubular detector and which carries several annular filter parts on its surface. (orig./HP) [de

Effects produced in GaAs by MeV ion bombardment

International Nuclear Information System (INIS)

Wie, C.R.

1985-01-01

The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

Neutron radiation damage studies on silicon detectors

International Nuclear Information System (INIS)

Li, Zheng; Chen, W.; Kraner, H.W.

1990-10-01

Effects of neutron radiation on electrical properties of Si detectors have been studied. At high neutron fluence (Φ n ≥ 10 12 n/cm 2 ), C-V characteristics of detectors with high resistivities (ρ ≥ 1 kΩ-cm) become frequency dependent. A two-trap level model describing this frequency dependent effect is proposed. Room temperature anneal of neutron damaged (at LN 2 temperature) detectors shows three anneal stages, while only two anneal stages were observed in elevated temperature anneal. 19 refs., 14 figs

Development of a Compact Gamma-ray Detector for a Neural-Network Radiation Monitoring

Energy Technology Data Exchange (ETDEWEB)

Kim, H. S.; Ha, J. H.; Lee, K. H. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, C. H. [Hanyang Univ., Seoul (Korea, Republic of)

2012-03-15

Radiation monitoring is very important to secure safety in nuclear-related facilities and against nuclear terrorism. For wide range of radiation monitoring, neutral network system of radiation detection is most efficient way. Thus, a compact radiation detector is useful to install in wide range to be concerned. A compact gamma-ray detector was fabricated by using a CsI(Tl) scintillator, which was matched with the formerly developed PIN photodiode, for a neural network radiation monitoring. At room temperature, the fabricated compact gamma-ray detector demonstrates an energy resolution of 13.3 % for 662 keV 6.9% for 1330 keV. The compactness, the low-voltage power consumption and the physical hardness are very useful features for a neural network radiation monitoring. In this study, characteristics of a fabricated compact gamma-ray detector were presented. An important aspect to consider in a neural-network radiation monitoring such as reaction probability of the fabricated compact detector for angle of incident gamma-ray was also addressed.

Fast X-ray detection systems based on GaAs diodes grown by LPE

International Nuclear Information System (INIS)

Rente, C.; Lauter, J.; Apetz, R.; Lueth, H.

1996-01-01

We report on the fabrication and characterization of GaAs based X-ray detectors. The detector structures are grown by liquid phase epitaxy (LPE) and show typical background doping in the order of 10 14 cm -3 (n-type) so that active regions up to 43 μm could be realized. Schottky diodes were processed with active areas up to 1mm 2 . Typical dark current densities are as low as 360pA/mm 2 at 100V. The energy resolution of the detector in combination with a charge sensitive preamplifier was determined to be 1.6keV (FWHM) for x-rays with an energy between 6 and 60keV. The time response of the devices coupled to a fast transimpedance amplifier with a bandwidth of 100MHz was investigated. Single photon detection at room temperature was achieved for X-rays having energies of 14 keV and higher. The measured time resolutions were 600ps (FWHM=1.4ns) and 430ps (FWHM=1.0ns) for X-ray photons of 14.4keV and 21.5keV, respectively. The efficiency of the detector having a 43μm thick depleted layer was determined to be 70% at 14.4 keV and 40% at 21.5keV. These detectors open a new field of X-ray spectroscopy especially for high rate applications and timing measurements at synchrotron radiation facilities

Substrate and Mg doping effects in GaAs nanowires

Directory of Open Access Journals (Sweden)

Perumal Kannappan

2017-10-01

Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

Development of Hybrid and Monolithic Silicon Micropattern Detectors

CERN Multimedia

Beker, H; Snoeys, W; Campbell, M; Lemeilleur, F; Ropotar, I

2002-01-01

%RD-19 \\\\ \\\\ In a collaborative effort between particle physics institutes and microelectronics industry we are undertaking the development of true 2-dimensional semiconductor particle detectors with on-chip signal processing and information extraction: the so-called micropattern detector. This detector is able to cope in a robust way with high multiplicity events at high rates, while allowing for a longer detector lifetime under irradiation and a thinner sensitive depletion region. Therefore, it will be ideally suited for the complicated events in the LHC p-p collider experiments. Following a $^{\\prime}$stepping stone$^{\\prime}$ approach several telescopes of pixel planes, totalling now 600 cm$^{2}$ with \\(>\\)~1~M elements have been used in the WA97, NA50 and NA57 lead ion experiments. This new technology has facilitated the tracking considerably (see Fig.1). Not only Si but also GaAs and possibly diamond matrices can be connected to the readout matrix. Tests with GaAs pixel detectors with the RD-19 readout ...

Characteristics for heavy ions and micro-dosimetry in radiation detectors

International Nuclear Information System (INIS)

Doke, Tadayoshi

1978-01-01

The characteristics of radiation detectors for heavy ions generally present more complex aspects as compared with those for electron beam and γ-ray. There is the ''Katz theory'' applying the target theory in radiobiology phenomenologically to radiation detectors. Here, first, the Katz theory for radiation detectors is explained, then its applications to nuclear plates, solid state track detectors, scintillation detectors and thermoluminescence dosimeters are described, respectively. The theory is used for the calibration of the nuclear charge of heavy ions in nuclear plates and recently is used to simulate the flight tracks of heavy ions or magnetic monopoles. In solid state track detectors, the threshold value of the energy given along the tracks of heavy ions is inherent to a detector, and the Katz theory is applicable as the measure of the threshold. The theory seems to be superior to the other methods. However, it has disadvantages that the calculation is not simple and is difficult for wide objects. In scintillation detectors, the scintillation efficiency is not a single function of dE/dx, but depends on the kinds of heavy ions, which Katz succeeded to describe quantitatively with his theory. Such result has also been produced that the dependence of thermoluminescence dosimeters such as LiF on LET by Katz theory agreed fairly well with experiments. (Wakatsuki, Y.)

Instrumentation for characterizing materials and composed semiconductors for ionizing radiation detectors

International Nuclear Information System (INIS)

Paschoal, Arquimedes J.A.; Leite, Adolfo M.B.; Nazzre, Fabio V.B.; Santos, Luiz A.P.

2007-01-01

The purpose of this work is the development of instrumentation for characterizing some type of ionizing radiation detectors. Those detectors are being manufactured by the Nuclear Instrumentation Laboratory at CRCN/Recife and can be used both on photon beam and with particles. Such detectors consist of semiconductor material in the form of films generated by oxide growing or by means of semiconductor material deposition in a substrate. Those materials can be made of metals, semi-metals, composites or semiconductor polymers. Prior to expose those detectors to ionizing radiation, it must be physically and electrically characterized. In this intention it was developed an electromechanical system. An electrical circuit was built to measure the signal from the detector and another circuit to control the movement of four probes (4-points technique) by using a stepper motor and the micro stepping technique avoiding damage to the detector. This system can be of interest to researchers that work with a sort of semiconductor materials in the form of thin film and in nanotechnological processes aiming the design of radiation ionizing detectors. (author)

The HERMES dual-radiator ring imaging Cherenkov detector

CERN Document Server

Akopov, N; Bailey, K; Bernreuther, S; Bianchi, N; Capitani, G P; Carter, P; Cisbani, E; De Leo, R; De Sanctis, E; De Schepper, D; Dzhordzhadze, V; Filippone, B W; Frullani, S; Garibaldi, F; Hansen, J O; Hommez, B; Iodice, M; Jackson, H E; Jung, P; Kaiser, R; Kanesaka, J; Kowalczyk, R; Lagamba, L; Maas, A; Muccifora, V; Nappi, E; Negodaeva, K; Nowak, Wolf-Dieter; O'Connor, T; O'Neill, T G; Potterveld, D H; Ryckbosch, D; Sakemi, Y; Sato, F; Schwind, A; Shibata, T A; Suetsugu, K; Thomas, E; Tytgat, M; Urciuoli, G M; Van De Kerckhove, K; Van De Vyver, R; Yoneyama, S; Zhang, L F; Zohrabyan, H G

2002-01-01

The construction and use of a dual radiator Ring Imaging Cherenkov (RICH) detector is described. This instrument was developed for the HERMES experiment at DESY which emphasises measurements of semi-inclusive deep-inelastic scattering. It provides particle identification for pions, kaons, and protons in the momentum range from 2 to 15 GeV, which is essential to these studies. The instrument uses two radiators, C sub 4 F sub 1 sub 0 , a heavy fluorocarbon gas, and a wall of silica aerogel tiles. The use of aerogel in a RICH detector has only recently become possible with the development of clear, large, homogeneous and hydrophobic aerogel. A lightweight mirror was constructed using a newly perfected technique to make resin-coated carbon-fiber surfaces of optical quality. The photon detector consists of 1934 photomultiplier tubes (PMT) for each detector half, held in a soft steel matrix to provide shielding against the residual field of the main spectrometer magnet.

Gold-coated copper cone detector as a new standard detector for F2 laser radiation at 157 nm

International Nuclear Information System (INIS)

Kueck, Stefan; Brandt, Friedhelm; Taddeo, Mario

2005-01-01

A new standard detector for high-accuracy measurements of F2 laser radiation at 157 nm is presented. This gold-coated copper cone detector permits the measurement of average powers up to 2 W with an uncertainty of ∼1%. To the best of our knowledge, this is the first highly accurate standard detector for F2 laser radiation for this power level. It is fully characterized according to Guide to the Expression of Uncertainty in Measurement of the International Organization for Standardization and is connected to the calibration chain for laser radiation established by the German National Metrology Institute

Evaluation of a digital optical ionizing radiation particle track detector

International Nuclear Information System (INIS)

Hunter, S.R.

1987-06-01

An ionizing radiation particle track detector is outlined which can, in principle, determine the three-dimensional spatial distribution of all the secondary electrons produced by the passage of ionizing radiation through a low-pressure (0.1 to 10 kPa) gas. The electrons in the particle track are excited by the presence of a high-frequency AC electric field, and two digital cameras image the optical radiation produced in electronic excitation collisions of the surroundings gas by the electrons. The specific requirements of the detector for neutron dosimetry and microdosimetry are outlined (i.e., operating conditions of the digital cameras, high voltage fields, gas mixtures, etc.) along with an estimate of the resolution and sensitivity achievable with this technique. The proposed detector is shown to compare favorable with other methods for obtaining the details of the track structure, particularly in the quality of the information obtainable about the particle track and the comparative simplicity and adaptability of the detector for measuring the secondary electron track structure for many forms of ionizing radiation over a wide range of energies

Development of superconducting tunnel junction radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Katagiri, Masaki; Kishimoto, Maki; Ukibe, Masahiro; Nakamura, Tatsuya; Nakazawa, Masaharu [Japan Atomic Energy Research Inst., Tokyo (Japan); Kurakado, Masahiko; Ishibashi, Kenji; Maehata, Keisuke

1998-07-01

Study on development of high energy resolution X-ray detector using superconducting tunnel junction (STJ) for radiation detection was conducted for 5 years under cooperation of University of Tokyo group and Kyushu University group by Quantum measurement research group of Advanced fundamental research center of JAERI. As the energy resolution of STJ could be obtained better results than that of Si semiconductor detector told to be actually best at present, this study aimed to actualize an X-ray detector usable for the experimental field and to elucidate radiation detection mechanism due to STJ. The STJ element used for this study was the one developed by Kurakado group of Nippon Steel Corp. As a results, some technical problems were almost resolved, which made some trouble when using the STJ element to detection element of X-ray spectrometer. In order to make the X-ray detector better, it is essential to manufacture a STJ element and develop serial junction type STJ element on the base of optimization of the element structure and selection and single crystallization of new superconducting materials such as Ta and others, activating the research results. (G.K.)

Locating gamma radiation source by self collimating BGO detector system

Energy Technology Data Exchange (ETDEWEB)

Orion, I; Pernick, A; Ilzycer, D; Zafrir, H [Israel Atomic Energy Commission, Yavne (Israel). Soreq Nuclear Research Center; Shani, G [Ben-Gurion Univ. of the Negev, Beersheba (Israel)

1996-12-01

The need for airborne collimated gamma detector system to estimate the radiation released from a nuclear accident has been established. A BGO detector system has been developed as an array of separate seven cylindrical Bismuth Germanate scintillators, one central detector symmetrically surrounded by six detectors. In such an arrangement, each of the detectors reduced the exposure of other detectors in the array to a radiation incident from a possible specific spatial angle, around file array. This shielding property defined as `self-collimation`, differs the point source response function for each of the detectors. The BGO detector system has a high density and atomic number, and therefore provides efficient self-collimation. Using the response functions of the separate detectors enables locating point sources as well as the direction of a nuclear radioactive plume with satisfactory angular resolution, of about 10 degrees. The detector`s point source response, as function of the source direction, in a horizontal plane, has been predicted by analytical calculation, and was verified by Monte-Carlo simulation using the code EGS4. The detector`s response was tested in a laboratory-scale experiment for several gamma ray energies, and the experimental results validated the theoretical (analytical and Monte-Carlo) results. (authors).

Modern gas-avalanche radiation detectors: from innovations to applications

International Nuclear Information System (INIS)

2013-01-01

Micro-Pattern Gaseous Detectors (MPGD) technologies allow for the conception of advanced large area radiation detectors with unprecedented spatial resolutions and sensitivities, capable of operating under very high radiation flux. After more than two decades of extensive R and D carried by large number of groups worldwide, these detector technologies have reached high level of maturity. Nowadays, they are adapted as leading instruments for a growing number of applications in particle physics and in many other fields on basic and applied research. The growing interest in MPGD technologies and their mass-production capabilities naturally motivates further developments in the field. The state-of-the-art detector concepts and technologies have been introduced and their evolution, properties and current leading applications have been reviewed. Future potential applications as well as new technology challenges have been discussed

Multi-directional radiation detector using photographic film

International Nuclear Information System (INIS)

Junet, L K; Majid, Z A Abdul; Sapuan, A H; Sayed, I S; Pauzi, N F

2014-01-01

Ionising radiation has always been part of our surrounding and people are continuously exposed to it. Ionising radiation is harmful to human health, thus it is vital to monitor the radiation. To monitor radiation, there are three main points that should be observed cautiously, which are energy, quantity, and direction of the radiation sources. A three dimensional (3D) dosimeter is an example of a radiation detector that provide these three main points. This dosimeter is able to record the radiation dose distribution in 3D. Applying the concept of dose detection distribution, study has been done to design a multi-directional radiation detector of different filter thicknesses. This is obtained by designing a cylinder shaped aluminum filter with several layers of different thickness. Black and white photographic material is used as a radiation-sensitive material and a PVC material has been used as the enclosure. The device is then exposed to a radiation source with different exposure factors. For exposure factor 70 kVp, 16 mAs; the results have shown that optical density (OD) value at 135° is 1.86 higher compared with an OD value at 315° which is 0.71 as the 135° area received more radiation compare to 315° region. Furthermore, with an evidence of different angle of film give different value of OD shows that this device has a multidirectional ability. Materials used to develop this device are widely available in the market, thus reducing the cost of development and making it suitable for commercialisation

Mobile robot prototype detector of gamma radiation

International Nuclear Information System (INIS)

Vazquez C, R.M.; Duran V, M. D.; Jardon M, C. I.

2014-10-01

In this paper the technological development of a mobile robot prototype detector of gamma radiation is shown. This prototype has been developed for the purpose of algorithms implementation for the applications of terrestrial radiation monitoring of exposed sources, search for missing radioactive sources, identification and delineation of radioactive contamination areas and distribution maps generating of radioactive exposure. Mobile robot detector of radiation is an experimental technology development platform to operate in laboratory environment or flat floor facilities. The prototype integrates a driving section of differential configuration robot on wheels, a support mechanism and rotation of shielded detector, actuator controller cards, acquisition and processing of sensor data, detection algorithms programming and control actuators, data recording (Data Logger) and data transmission in wireless way. The robot in this first phase is remotely operated in wireless way with a range of approximately 150 m line of sight and can extend that range to 300 m or more with the use of signal repeaters. The gamma radiation detection is performed using a Geiger detector shielded. Scan detection is performed at various time sampling periods and diverse positions of discrete or continuous angular orientation on the horizon. The captured data are geographical coordinates of robot GPS (latitude and longitude), orientation angle of shield, counting by sampling time, date, hours, minutes and seconds. The data is saved in a file in the Micro Sd memory on the robot. They are also sent in wireless way by an X Bee card to a remote station that receives for their online monitoring on a laptop through an acquisition program by serial port on Mat Lab. Additionally a voice synthesizing card with a horn, both in the robot, periodically pronounced in Spanish, data length, latitude, orientation angle of shield and detected accounts. (Author)

Large arrays of discrete ionizing radiation detectors multiplexed using fluorescent optical converters

International Nuclear Information System (INIS)

Koslow, E.E.; Edelman, R.R.

1985-01-01

This invention provides a radiation imaging system employing arrays of scintillators. An object of the invention is to produce a detector with high spatial resolution, high gamma-photon absorption efficiency, excellent source and detector scatter rejection, and utilizing low-cost solid state opto-electronic devices. In one embodiment, it provides a radiation detection and conversion apparatus having an array of optically isolated radiation sensitive elements that emit optical radiation upon absorption of ionizing radiation. An array of channels, comprising a material that absorbs and traps the radiation emitted and transports it or radiation that has been shifted to longer wavelengths, is placed near the radiation-sensitive elements. Electro-optical detectors that convert the transported radiation into electrical signals are coupled to the channels. The activation of one of the electro-optical devices by radiation from one of the channels indicates that at least one of the radiation-sensitive elements near that channel has absorbed a quantity of radiation

Modeling of diamond radiation detectors

International Nuclear Information System (INIS)

Milazzo, L.; Mainwood, A.

2004-01-01

We have built up a computer simulation of the detection mechanism in the diamond radiation detectors. The diamond detectors can be fabricated from a chemical vapour deposition polycrystalline diamond film. In this case, the trapping-detrapping and recombination at the defects inside the grains and at the grain boundaries degrade the transport properties of the material and the charge induction processes. These effects may strongly influence the device's response. Previous simulations of this kind of phenomena in the diamond detectors have generally been restricted to the simple detector geometries and homogeneous distribution of the defects. In our model, the diamond film (diamond detector) is simulated by a grid. We apply a spatial and time discretization, regulated by the grid resolution, to the equations describing the charge transport and, by using the Shockley-Ramo theorem, we calculate the signal induced on the electrodes. In this way, we can simulate the effects of the nonhomogeneous distributions of the trapping, recombination, or scattering centers and can investigate the differences observed when different particles, energies, and electrode configurations are used. The simulation shows that the efficiency of the detector increases linearly with the average grain size, that the charge collection distance is small compared to the dimensions of a single grain, and that for small grains, the trapping at the intragrain defects is insignificant compared to the effect of the grain boundaries

Radiation Hazard Detector

Science.gov (United States)

1978-01-01

NASA technology has made commercially available a new, inexpensive, conveniently-carried device for protection, of people exposed to potentially dangerous levels of microwave radiation. Microwaves are radio emissions of extremely high frequency. They can be hazardous but the degree of hazard is not yet well understood. Generally, it is believed that low intensity radiation of short duration is not harmful but that exposure to high levels can induce deep internal burns, affecting the circulatory and nervous systems, and particularly the eyes. The Department of Labor's Occupational Safety and Health Administration (OSHA) has established an allowable safe threshold of exposure. However, people working near high intensity sources of microwave energy-for example, radar antennas and television transmitters-may be unknowingly exposed to radiation levels beyond the safe limit. This poses not only a personal safety problem but also a problem for employers in terms of productivity loss, workman's compensation claims and possible liability litigation. Earlier-developed monitoring devices which warn personnel of dangerous radiation levels have their shortcomings. They can be cumbersome and awkward to use while working. They also require continual visual monitoring to determine if a person is in a dangerous area of radiation, and they are relatively expensive, another deterrent to their widespread adoption. In response to the need for a cheaper and more effective warning system, Jet Propulsion Laboratory developed, under NASA auspices, a new, battery-powered Microwave Radiation Hazard Detector. To bring the product to the commercial market, California Institute Research Foundation, the patent holder, granted an exclusive license to Cicoil Corporation, Chatsworth, California, an electronic components manufacturer.

Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

CERN Document Server

Hitomi, K; Shoji, T; Suehiro, T; Hiratate, Y

1999-01-01

Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime (mu tau) product and the energy required to create an electron-hole pair (the epsilon value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV gamma-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the epsilon value has been estimated to be about 5.85 eV for the TlBr crystal.

Method and apparatus for logging a borehole employing dual radiation detectors

International Nuclear Information System (INIS)

Arnold, D.M.

1986-01-01

An apparatus is described for logging a characteristic of a borehole in an earth formation employing nuclear count rate data selectively compensated for non-standard borehole conditions, comprising: a sonde, movable in a borehole, having: a radiation source for emitting radiation into earth formations adjacent the wellbore; first detector, spaced longitudinally from the radiation source, for detecting radiation scattered back to the detector and generating a first signal representative of a first count rate value, C/sub SS/; and second detector spaced a different longitudinal distance from the radiation source, for detecting radiation scattered back to the detector and generating a second signal representative of a count rate value, C/sub LS/; memory means for storing a predetermined threshold value, first predetermined relationships between the borehole characteristic and count rate values C/sub LS/, C/sub SS/; and second predetermined relationships between the borehole characteristic and ratios of C/sub LS/ to C/sub SS/; electronic means for producing a signal related in value to the borehole characteristic, which electronic means compares at least one of the first and second count rate value signals with the predetermined threshold value; means for recording the signal generated by the electronic means

Calculation of the relative efficiency of thermoluminescent detectors to space radiation

International Nuclear Information System (INIS)

Bilski, P.

2011-01-01

Thermoluminescent (TL) detectors are often used for measurements of radiation doses in space. While space radiation is composed of a mixture of heavy charged particles, the relative TL efficiency depends on ionization density. The question therefore arises: what is the relative efficiency of TLDs to the radiation present in space? In the attempt to answer this question, the relative TL efficiency of two types of lithium fluoride detectors for space radiation has been calculated, based on the theoretical space spectra and the experimental values of TL efficiency to ion beams. The TL efficiency of LiF:Mg,Ti detectors for radiation encountered at typical low-Earth’s orbit was found to be close to unity, justifying a common application of these TLDs to space dosimetry. The TL efficiency of LiF:Mg,Cu,P detectors is significantly lower. It was found that a shielding may have a significant influence on the relative response of TLDs, due to changes caused in the radiation spectrum. In case of application of TLDs outside the Earth’s magnetosphere, one should expect lower relative efficiency than at the low-Earth’s orbit.

High energy radiation detector

International Nuclear Information System (INIS)

Vosburgh, K.G.

1975-01-01

The high energy radiation detector described comprises a set of closely spaced wedge reflectors. Each wedge reflector is composed of three sides forming identical isoceles triangles with a common apex and an open base forming an equilateral triangle. The length of one side of the base is less than the thickness of the coat of material sensitive to high energy radiation. The wedge reflectors reflect the light photons spreading to the rear of the coat in such a way that each reflected track is parallel to the incident track of the light photon spreading rearwards. The angle of the three isosceles triangles with a common apex is between 85 and 95 deg. The first main surface of the coat of high energy radiation sensitive material is in contact with the projecting edges of the surface of the wedge reflectors of the reflecting element [fr

[Effects of ionizing radiation on scintillators and other particle detectors

International Nuclear Information System (INIS)

Proudfoot, J.

1992-01-01

It is my task to summarise the great variety of topics (covering a refreshing mix of physics, chemistry and technology) presented at this conference, which has focused on the effects of ionising radiation on scintillators and other particle detectors. One of the reasons and the central interest of many of the participants was the use of such detectors in experiments at two future large hadron colliders: the Superconducting Super Collider to be operating outside of Dallas in the United States by the turn of the decade and its European counterpart the Large Hadron Collider to be operating outside of Geneva in Switzerland on a similar time scale. These accelerators are the ''apple of the high energy physicist's eye.'' Their goal is to uncover the elusive Higgs particle and thereby set the cornerstone in our current knowledge of elementary particle interactions. This is the Quest, and from this lofty height the presentations rapidly moved on to the specific questions of experimental science: how such an experiment is carried out; why radiation damage is an issue; how radiation damage affects detectors; which factors affect radiation damage characteristics; which factors are not affected by radiation damage; and how better detectors may be constructed. These were the substance of this conference

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Nachman, Benjamin Philip; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of $10^{15}$ 1 MeV $n_\\mathrm{eq}/\\mathrm{cm}^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorough description of the setup, predictions for basic Pixel cluster properties are presented alongside first validation studies with Run 2 collision data.

Gallium arsenide detectors for minimum ionizing particles

International Nuclear Information System (INIS)

Beaumont, S.B.; Bertin, R.; Booth, C.N.; Buttar, C.; Capiluppi, C.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F.H.; D'Auria, S.; Del Papa, C.; Dogru, M.; Edwards, M.; Fiori, F.; Foster, F.; Francescato, A.; Gray, R.; Hill, G.; Hou, Y.; Houston, P.; Hughes, G.; Jones, B.K.; Lynch, J.G.; Lisowsky, B.; Matheson, J.; Nava, F.; Nuti, M.; O'Shea, V.; Pelfer, P.G.; Raine, C.; Santana, J.; Saunders, I.J.; Seller, P.H.; Shankar, K.; Sharp, P.H.; Skillicorn, I.O.; Sloan, T.; Smith, K.M.; Tartoni, N.; Ten Have, I.; Turnbull, R.M.; Vanni, U.; Vinattieri, A.; Zichichi, A.

1993-01-01

Progress on the development of GaAs solid state detectors is presented. 80% charge collection efficiency has been achieved, and double sided detectors with metal rectifying contacts have been tested. Measurements of capacitance and tests with SEM are giving more information on the behaviour of these devices. (orig.)

Radiation detector

International Nuclear Information System (INIS)

Conrad, B.; Finkenzeller, J.; Kiiehn, G.; Lichtenberg, W.

1984-01-01

In an exemplary embodiment, a flat radiation beam is detected having a common electrode disposed parallel to the beam plane at one side and a common support with a series of individual conductors providing electrodes opposite successive portions of the common electrode and lying in a plane also parallel to the beam plane. The beam may be fan-shaped and the individual electrodes may be aligned with respective ray paths separated by uniform angular increments in the beam plane. The individual conductors and the connection thereof to the exterior of the detector housing may be formed on an insulator which can be folded into a T-shape for leading the supply conductors for alternate individual conductors toward terminals at opposite sides of the chamber

Alpha particle response study of polycrstalline diamond radiation detector

Energy Technology Data Exchange (ETDEWEB)

Kumar, Amit; Topkar, Anita [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

2016-05-23

Chemical vapor deposition has opened the possibility to grow high purity synthetic diamond at relatively low cost. This has opened up uses of diamond based detectors for wide range of applications. These detectors are most suitable for harsh environments where standard semiconductor detectors cannot work. In this paper, we present the fabrication details and performance study of polycrystalline diamond based radiation detector. Effect of different operating parameters such as bias voltage and shaping time for charge collection on the performance of detector has been studied.

Silicon-lithium nuclear radiation detectors. Kremnii-litievye detektory yadernogo izlucheniya

Energy Technology Data Exchange (ETDEWEB)

Azimov, S.A.; Muminov, R.A.; Shamirzaev, S.Kh.; Yafasov, A.Ya.

1981-01-01

A presentation is made of the physical principles underlying the design, building, and technology of silicon-lithium detectors and ways of improving them. Criteria of nuclear radiation control and selection and the connection between radiation and detector properties are discussed. A study is made of the effect that various defects have on the process of charge collection and formation of amplitude spectra during the recording of various types of particles. A detailed examination is made of the optimal technological systems for making detectors with high energy and time resolutions, and features of producing high-quality detectors which employ the use of ion-laser and other methods of modern semiconductor technology. 322 references, 102 figures, 2 tables.

Photocurrent spectra of semi-insulating GaAs M-S-M diodes: role of the contacts

Czech Academy of Sciences Publication Activity Database

Dubecký, F.; Oswald, Jiří; Kindl, Dobroslav; Hubík, Pavel; Dubecký, M.; Gombia, E.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Nečas, V.

2016-01-01

Roč. 118, Apr (2016), 30-35 ISSN 0038-1101 Institutional support: RVO:68378271 Keywords : photocurrent spectroscopy * semi-insulating GaAs * detectors * contacts Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.580, year: 2016

Characterization and calibration of radiation-damaged double-sided silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Kaya, L. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Vogt, A., E-mail: andreas.vogt@ikp.uni-koeln.de [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Reiter, P.; Birkenbach, B.; Hirsch, R.; Arnswald, K.; Hess, H.; Seidlitz, M.; Steinbach, T.; Warr, N.; Wolf, K. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Stahl, C.; Pietralla, N. [Institut für Kernphysik, Technische Universität Darmstadt, D-64291 Darmstadt (Germany); Limböck, T.; Meerholz, K. [Physikalische Chemie, Universität zu Köln, D-50939 Köln (Germany); Lutter, R. [Maier-Leibnitz-Laboratorium, Ludwig-Maximilians-Universität München, D-85748 Garching (Germany)

2017-05-21

Double-sided silicon strip detectors (DSSSD) are commonly used for event-by-event identification of charged particles as well as the reconstruction of particle trajectories in nuclear physics experiments with stable and radioactive beams. Intersecting areas of both p- and n-doped front- and back-side segments form individual virtual pixel segments allowing for a high detector granularity. DSSSDs are employed in demanding experimental environments and have to withstand high count rates of impinging nuclei. The illumination of the detector is often not homogeneous. Consequently, radiation damage of the detector is distributed non-uniformly. Position-dependent incomplete charge collection due to radiation damage limits the performance and lifetime of the detectors, the response of different channels may vary drastically. Position-resolved charge-collection losses between front- and back-side segments are investigated in an in-beam experiment and by performing radioactive source measurements. A novel position-resolved calibration method based on mutual consistency of p-side and n-side charges yields a significant enhancement of the energy resolution and the performance of radiation-damaged parts of the detector.

Search for Physics beyond the Standard Model with the ATLAS detector and the development of radiation detectors

CERN Document Server

Silver, Yiftah

We are investigating a radiation detector based on plasma display panel technology, the principal component of plasma television displays. This Plasma Panel Sensor (PPS) technology is a variant of micro-pattern gas radiation detectors. Based on the properties of existing plasma display panels, we expect eventually to be able to build a sealed array of plasma discharge gas cells to detect ionizing radiation with fast rise time of less than 10ns and high spatial resolution using a pixel pitch of less than 100 micrometer. In this thesis I shall describe our program of testing plasma display panels as detectors, including simulations, design and the first laboratory and beam studies that demonstrate the detection of cosmic ray muons, beta rays and medium energy protons. The ATLAS detector is used to search for high-mass resonances, in particular heavy neutral gauge bosons (Z') and excited states of Kaluza-Klein γ/Z bosons decaying to an electron-positron pair or a muon-antimuon pair. Results are presented based ...

ITER TASK T252 (1995):Gamma radiation testing of a GaAs operational amplifier for instrument applications

International Nuclear Information System (INIS)

Hiemstra, D.

1996-03-01

The purpose of this 1995 ITER task was : to build an improved operational amplifier using GaAs MESFET technology, to build a reference voltage subcircuit using GaAs MESFET technology and to investigate the potential of GaAs HBT's to improve the noise performance of the GaAs MESFET operational amplifier. This work addresses the need for instrumentation-grade components to read sensors in an experimental fusion reactor, where the anticipated total dose for a useful service life is 3Grad(GaAs). It is an extension of our 1994 work. 3 tabs., 6 figs

New detectors of neutron, gamma- and X-radiations

CERN Document Server

Lobanov, N S

2002-01-01

Paper presents new detectors to record absorbed doses of neutron, gamma- and X-ray radiations within 0-1500 Mrad range. DBF dosimeter is based on dibutyl phthalate. EDS dosimeter is based on epoxy (epoxide) resin, while SD 5-40 detector is based on a mixture of dibutyl phthalate and epoxy resin. Paper describes experimental techniques to calibrate and interprets the measurement results of absorbed doses for all detectors. All three detectors cover 0-30000 Mrad measured does range. The accuracy of measurements is +- 10% independent (practically) of irradiation dose rates within 20-2000 rad/s limits under 20-80 deg C temperature

The role of contacts in semiconductor gamma radiation detectors

International Nuclear Information System (INIS)

Lachish, U.

1998-01-01

It is proposed that the operation of semiconductor gamma radiation detectors, equipped with ohmic contacts, which allow free electron flow between the contacts and bulk material, will not be sensitive to low hole mobility, hole collection efficiency, or hole trapping. Such fast-operating detectors may be readily integrated into monolithic arrays. The detection mechanism and various material aspects are discussed and compared to those of blocking contact detectors. Some suggestions for detector realization are presented. (orig.)

Monitoring the Radiation Damage of the ATLAS Pixel Detector

CERN Document Server

Cooke, M; The ATLAS collaboration

2012-01-01

The Pixel Detector is the innermost charged particle tracking component employed by the ATLAS experiment at the CERN Large Hadron Collider (LHC). The instantaneous luminosity delivered by the LHC, now routinely in excess of 5x10^{33} cm^{-2} s^{-1}, results in a rapidly increasing accumulated radiation dose to the detector. Methods based on the sensor depletion properties and leakage current are used to monitor the evolution of the radiation damage, and results from the 2011 run are presented.

Monitoring the radiation damage of the ATLAS pixel detector

International Nuclear Information System (INIS)

Cooke, M.

2013-01-01

The pixel detector is the innermost charged particle tracking component employed by the ATLAS experiment at the CERN Large Hadron Collider (LHC). The instantaneous luminosity delivered by the LHC, now routinely in excess of 5×10 33 cm −2 s −1 , results in a rapidly increasing accumulated radiation dose to the detector. Methods based on the sensor depletion properties and leakage current are used to monitor the evolution of the radiation damage, and results from the 2011 run are presented

Liquid phase epitaxial growth of GaAs

Energy Technology Data Exchange (ETDEWEB)

Wynne, Danielle Ivy [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

1997-10-01

Research into new semiconductor materials for measurement of electromagnetic radiation over a wide range of energies has been an active field for several decades. There is a strong desire to identify and develop new materials which can lead to improved detectors. Such devices are expected to solve problems that cannot be solved using the semiconductor materials and device structures which have been traditionally used for radiation detection. In order for a detector which is subjected to some type of irradiation to respond, the radiation must undergo an interaction with the detector. The net result of the radiation interaction in a broad category of detectors is the generation of mobile electric charge carriers (electrons and/or holes) within the detector active volume. This charge is collected at the detector contacts and it forms the basic electrical signal. Typically, the collection of the charge is accomplished through the imposition of an electric field within the detector which causes the positive and/or negative charges created by the radiation to flow in opposite directions to the contacts. For the material to serve as a good radiation detector, a large fraction (preferably 100%) of all carriers created by the interacting incident radiation must be collected. Charge trapping by deep level impurities and structural defects can seriously degrade detector performance. The focus of this thesis is on far infrared and X-ray detection. In X-ray detector applications of p-I-n diodes, the object is to measure accurately the energy distribution of the incident radiation quanta. One important property of such detectors is their ability to measure the energy of individual incident photons with high energy resolution.

Radiation Damage Modeling for 3D Pixel Sensors in the ATLAS Detector

CERN Document Server

Wallangen, Veronica; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

CERN Document Server

Verbitskaya, E; Ivanov, A; Strokan, N; Vasilev, V; Markov, A; Polyakov, A; Gavrin, V; Kozlova, Y; Veretenkin, E; Bowles, T J

2000-01-01

The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p sup + -i-n sup + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E sub v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E sub v +0....

Field oxide radiation damage measurements in silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-04-01

Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

Diamond detectors for synchrotron radiation X-ray applications

Energy Technology Data Exchange (ETDEWEB)

De Sio, A. [Laboratori Nazionali di Frascati, INFN, 00044 Frascati, Roma (Italy); Department of Astronomy and Space Science, Universita di Firenze, L.go E. Fermi 2, 50125 Firenze (Italy)], E-mail: desio@arcetri.astro.it; Pace, E. [Department of Astronomy and Space Science, Universita di Firenze, L.go E. Fermi 2, 50125 Firenze (Italy); INFN, Sezione di Firenze, v. G. Sansone 1, Sesto Fiorentino, Firenze (Italy); Cinque, G.; Marcelli, A. [Laboratori Nazionali di Frascati, INFN, 00044 Frascati, Roma (Italy); Achard, J.; Tallaire, A. [LIMHP-CNRS, University of Paris XIII, 99 Avenue JB Clement, 93430 Villetaneuse (France)

2007-07-15

Due to its unique physical properties, diamond is a very appealing material for the development of electronic devices and sensors. Its wide band gap (5.5 eV) endows diamond based devices with low thermal noise, low dark current levels and, in the case of radiation detectors, high visible-to-X-ray signal discrimination (visible blindness) as well as high sensitivity to energies greater than the band gap. Furthermore, due to its radiation hardness diamond is very interesting for applications in extreme environments, or as monitor of high fluency radiation beams. In this work the use of diamond based detectors for X-ray sensing is discussed. On purpose, some photo-conductors based on different diamond types have been tested at the DAFNE-L synchrotron radiation laboratory at Frascati. X-ray sensitivity spectra, linearity and stability of the response of these diamond devices have been measured in order to evidence the promising performance of such devices.

Diamond detectors for synchrotron radiation X-ray applications

International Nuclear Information System (INIS)

De Sio, A.; Pace, E.; Cinque, G.; Marcelli, A.; Achard, J.; Tallaire, A.

2007-01-01

Due to its unique physical properties, diamond is a very appealing material for the development of electronic devices and sensors. Its wide band gap (5.5 eV) endows diamond based devices with low thermal noise, low dark current levels and, in the case of radiation detectors, high visible-to-X-ray signal discrimination (visible blindness) as well as high sensitivity to energies greater than the band gap. Furthermore, due to its radiation hardness diamond is very interesting for applications in extreme environments, or as monitor of high fluency radiation beams. In this work the use of diamond based detectors for X-ray sensing is discussed. On purpose, some photo-conductors based on different diamond types have been tested at the DAFNE-L synchrotron radiation laboratory at Frascati. X-ray sensitivity spectra, linearity and stability of the response of these diamond devices have been measured in order to evidence the promising performance of such devices

Active microphonic noise cancellation in radiation detectors

International Nuclear Information System (INIS)

Zimmermann, Sergio

2013-01-01

A new adaptive filtering technique to reduce microphonic noise in radiation detectors is presented. The technique is based on system identification that actively cancels the microphonic noise. A sensor is used to measures mechanical disturbances that cause vibration on the detector assembly, and the digital adaptive filtering estimates the impact of these disturbances on the microphonic noise. The noise then can be subtracted from the actual detector measurement. In this paper the technique is presented and simulations are used to support this approach. -- Highlights: •A sensor is used to measures mechanical disturbances that cause vibration on the detector assembly. •Digital adaptive filtering estimates the impact of these disturbances on the microphonic noise. •The noise is then subtracted from the actual detector measurement. •We use simulations to demonstrate the performance of this approach. •After cancellation, we recover most of the original energy resolution

Radiation damage measurements on CZT drift strip detectors

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Korsbech, Uffe C C

2003-01-01

from 2 x 10(8) to 60 x 10(8) p(+)/cm(2). Even for the highest fluences, which had a dramatic effect on the spectroscopic performance, we were able to recover the detectors after an appropriate annealing procedure. The radiation damage was studied as a function of depth inside the detector material...... with the proton dose. The radiation contribution to the electron trapping was found to obey the following relation: (mutau(e)(-1))(rad) = (2.5+/-0.2) x 10(-7) x Phi (V/cm)(2) with the proton fluence, Phi in p(+)/cm(2). The trapping depth dependence, however, did not agree well with the damage profile calculated...

Hydrodynamic electronic fluid instability in GaAs MESFETs at terahertz frequencies

Science.gov (United States)

Li, Kang; Hao, Yue; Jin, Xiaoqi; Lu, Wu

2018-01-01

III-V compound semiconductor field effect transistors (FETs) are potential candidates as solid state THz emitters and detectors due to plasma wave instability in these devices. Using a 2D hydrodynamic model, here we present the numerical studies of electron fluid instability in a FET structure. The model is implemented in a GaAs MESFET structure with a gate length of 0.2 µm as a testbed by taking into account the non-equilibrium transport and multi-valley non-parabolicity energy bands. The results show that the electronic density instability in the channel can produce stable periodic oscillations at THz frequencies. Along with stable oscillations, negative differential resistance in output characteristics is observed. The THz emission energy density increases monotonically with the drain bias. The emission frequency of electron density oscillations can be tuned by both gate and drain biases. The results suggest that III-V FETs can be a kind of versatile THz devices with good tunability on both radiative power and emission frequency.

Methods for radiation detection and characterization using a multiple detector probe

Science.gov (United States)

Akers, Douglas William; Roybal, Lyle Gene

2014-11-04

Apparatuses, methods, and systems relating to radiological characterization of environments are disclosed. Multi-detector probes with a plurality of detectors in a common housing may be used to substantially concurrently detect a plurality of different radiation activities and types. Multiple multi-detector probes may be used in a down-hole environment to substantially concurrently detect radioactive activity and contents of a buried waste container. Software may process, analyze, and integrate the data from the different multi-detector probes and the different detector types therein to provide source location and integrated analysis as to the source types and activity in the measured environment. Further, the integrated data may be used to compensate for differential density effects and the effects of radiation shielding materials within the volume being measured.

The transition radiation detector of the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Bergmann, Cyrano [Institut fuer Kernphysik, WWU Muenster (Germany)

2016-07-01

The Compressed Baryonic Matter (CBM) experiment is a fixed target heavy-ion experiment at the future FAIR accelerator facility. The CBM Transition Radiation Detector (TRD) is one of the key detectors to provide electron identification above momenta of 1 GeV/c and charged particle tracking. Due its capability to identify charged particles via their specific energy loss, the TRD in addition will provide valuable information for the measurement of fragments. These requirements can be fulfilled with a XeCO{sub 2} based Multi-Wire Proportional Counter (MWPC) detector in combination with an adequate radiator. The default MWPC is composed of a symmetric amplification area of 7 mm thickness, followed by a 5 mm drift region to enhance the TR-photon absorption probability in the active gas volume. This geometry provides also efficient and fast signal creation, as well as read-out, of the order of 200 μs per charged particle track. The performance of this detector is maximized by reducing the material budget between the radiator and gas volume to a minimum. The full detector at SIS100 will be composed of 200 modules in 2 sizes. To limit cost and production time the number of various module types is limited to 6 types and 4 types of Front End Board (FEB) flavors are required. An overview of the design and performance of the TRD detector is given.

The AMS-02 transition radiation detector

CERN Document Server

Kirn, Th

2004-01-01

The Alpha Magnetic Spectrometer AMS02 will be equipped with a large transition radiation detector (TRD) to achieve a proton background suppression necessary for dark matter searches. The AMS02 TRD consists of 20 layers of fleece radiator each with Xe/CO//2 proportional wire straw tubes read out by a dedicated low-power data- acquisition system. A space-qualified TRD design will be presented. The performance of a 20-layer prototype was tested at CERN with electron, myon and pion beams up to l00 GeV and with protons up to 250 GeV. The beam-test results will be compared to Geant3 MC predictions. The detector is under construction at RWTH Aachen; the gas system will be built at MIT, slow-control at MIT and INFN Rome and DAQ at TH Karlsruhe. This project is funded by the German Space Agency DLR, the US Department of Energy DOE and NASA.

Portable radiation detector and mapping system

International Nuclear Information System (INIS)

Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

1995-01-01

A portable radiation detector and mapping system (RADMAPS) has been developed to detect, locate and plot nuclear radiation intensities on commercially available digital maps and other images. The field unit records gamma-ray spectra or neutron signals together with positions from a Global Positioning System (GPS) on flash memory cards. The recorded information is then transferred to a lap-top computer for spectral data analyses and then georegistered graphically on maps, photographs, etc. RADMAPS integrates several existing technologies to produce a preprogrammable field unit uniquely suited for each survey, as required. The system presently records spectra from a Nal(Tl) gamma-ray detector or an enriched Li-6 doped glass neutron scintillator. Standard Geographic Information System software installed in a lap-top, complete with CD-ROM supporting digitally imaged maps, permits the characterization of nuclear material in the field when the presence of such material is not otherwise documented. This paper gives the results of a typical site survey of the Savannah River Site (SRS) using RADMAPS

Electromechanically cooled germanium radiation detector system

International Nuclear Information System (INIS)

Lavietes, Anthony D.; Joseph Mauger, G.; Anderson, Eric H.

1999-01-01

We have successfully developed and fielded an electromechanically cooled germanium radiation detector (EMC-HPGe) at Lawrence Livermore National Laboratory (LLNL). This detector system was designed to provide optimum energy resolution, long lifetime, and extremely reliable operation for unattended and portable applications. For most analytical applications, high purity germanium (HPGe) detectors are the standard detectors of choice, providing an unsurpassed combination of high energy resolution performance and exceptional detection efficiency. Logistical difficulties associated with providing the required liquid nitrogen (LN) for cooling is the primary reason that these systems are found mainly in laboratories. The EMC-HPGe detector system described in this paper successfully provides HPGe detector performance in a portable instrument that allows for isotopic analysis in the field. It incorporates a unique active vibration control system that allows the use of a Sunpower Stirling cycle cryocooler unit without significant spectral degradation from microphonics. All standard isotopic analysis codes, including MGA and MGA++, GAMANL, GRPANL and MGAU, typically used with HPGe detectors can be used with this system with excellent results. Several national and international Safeguards organisations including the International Atomic Energy Agency (IAEA) and U.S. Department of Energy (DOE) have expressed interest in this system. The detector was combined with custom software and demonstrated as a rapid Field Radiometric Identification System (FRIS) for the U.S. Customs Service . The European Communities' Safeguards Directorate (EURATOM) is field-testing the first Safeguards prototype in their applications. The EMC-HPGe detector system design, recent applications, and results will be highlighted

A radiation detector fabricated from silicon photodiode.

Science.gov (United States)

Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

1984-12-01

A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

The use of detectors based on ionisation recombination in radiation protection

International Nuclear Information System (INIS)

Sullivan, A.H.

1984-01-01

Intitial recombination of ionisation in a gas depends on the ionisation density and hence on the linear energy transfer along the tracks of charged particles. This effect can be used as a basis for instruments that respond to different types of ionising radiation approximately in the way required by the quality factor-linear energy transfer relation recommended by the ICRP for use in radiation protection. Empirical instruments based on ionisation recombination that have been used for radiation protection measurements are reviewed, and relations are derived from recombination theory that show that the response of such detectors can be readily predicted. The usefulness of recombination instruments in radiation protection is discussed and their advantages and limitations assessed. It is shown that their main application will be as reference instruments against which other detectors can be calibrated. As an extension to using recombination detectors as reference instruments, the feasibility of specifying radiation quality in terms of ionisation recombination is investigated. (author)

Characterization of a radiation detector for aircraft measurements

International Nuclear Information System (INIS)

Holanda M, L. de; Federico, C. A.; Caldas, L. V. E.

2014-08-01

Air crews, as pilots and flight attendants, are subjected to cosmic ray doses which can be higher than the average doses on workers from the nuclear industry. The diversity of particles of high energies present in the radiation field on board of air crafts turns the determination of the incident dose difficult, and requires special care regarding dosimetric systems to be used in this kind of radiation field. The Brazilian Air Force, through its Institute for Advanced Studies (Instituto de Estudos Avancados, IEAv/DCTA) in conjunction with the Institute of Energetic and Nuclear Research (Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP) are working on this subject since 2008. A prototype of a radiation detector for aircraft measurements was previously built and tested in flight and laboratory conditions. The detector is able of measuring a quantity known as absorbed dose (using passive dosimeters), which will subsequently be correlated to the ambient dose equivalent and the effective dose received by air crews. In this context, a theoretical approach through Monte Carlo simulations with the computational codes MCNP5 and MCNPX was used to model and characterize the detector response at such experimental conditions. This work presents the preliminary results of the computational modeling, with special emphasis on the comparison between the absorbed doses measured and simulated, and its relationship with the ambient dose equivalent and the effective dose for this detector. (author)

Characterization of a radiation detector for aircraft measurements

Energy Technology Data Exchange (ETDEWEB)

Holanda M, L. de; Federico, C. A.; Caldas, L. V. E., E-mail: lcaldas@ipen.br [Instituto de Pesquisas Energeticas e Nucleares, Av. Lineu Prestes 2242, Cidade Universitaria, CEP 05508-000, Sao Paulo (Brazil)

2014-08-15

Air crews, as pilots and flight attendants, are subjected to cosmic ray doses which can be higher than the average doses on workers from the nuclear industry. The diversity of particles of high energies present in the radiation field on board of air crafts turns the determination of the incident dose difficult, and requires special care regarding dosimetric systems to be used in this kind of radiation field. The Brazilian Air Force, through its Institute for Advanced Studies (Instituto de Estudos Avancados, IEAv/DCTA) in conjunction with the Institute of Energetic and Nuclear Research (Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP) are working on this subject since 2008. A prototype of a radiation detector for aircraft measurements was previously built and tested in flight and laboratory conditions. The detector is able of measuring a quantity known as absorbed dose (using passive dosimeters), which will subsequently be correlated to the ambient dose equivalent and the effective dose received by air crews. In this context, a theoretical approach through Monte Carlo simulations with the computational codes MCNP5 and MCNPX was used to model and characterize the detector response at such experimental conditions. This work presents the preliminary results of the computational modeling, with special emphasis on the comparison between the absorbed doses measured and simulated, and its relationship with the ambient dose equivalent and the effective dose for this detector. (author)

Studying radiative B decays with the Atlas detector

International Nuclear Information System (INIS)

Viret, S.

2004-09-01

This thesis is dedicated to the study of radiative B decays with the ATLAS detector at the LHC (large hadron collider). Radiative decays belong to the rare decays family. Rare decays transitions involve flavor changing neutral currents (for example b → sγ), which are forbidden at the lowest order in the Standard Model. Therefore these processes occur only at the next order, thus involving penguin or box diagrams, which are very sensitive to 'new physics' contributions. The main goal of our study is to show that it would be possible to develop an online selection strategy for radiative B decays with the ATLAS detector. To this end, we have studied the treatment of low energy photons by the ATLAS electromagnetic calorimeter (ECal). Our analysis shows that ATLAS ECal will be efficient with these particles. This property is extensively used in the next section, where a selection strategy for radiative B decays is proposed. Indeed, we look for a low energy region of interest in the ECal as soon as the level 1 of the trigger. Then, photon identification cuts are performed in this region at level 2. However, a large part of the proposed selection scheme is also based on the inner detector, particularly at level 2. The final results show that large amounts of signal events could be collected in only one year by ATLAS. A preliminary significance (S/√B) estimation is also presented. Encouraging results concerning the observability of exclusive radiative B decays are obtained. (author)

Single-flux-quantum circuit technology for superconducting radiation detectors

International Nuclear Information System (INIS)

Fujimaki, Akira; Onogi, Masashi; Matsumoto, Tomohiro; Tanaka, Masamitsu; Sekiya, Akito; Hayakawa, Hisao; Yorozu, Shinichi; Terai, Hirotaka; Yoshikawa, Nobuyuki

2003-01-01

We discuss the application of the single-flux-quantum (SFQ) logic circuits to multi superconducting radiation detectors system. The SFQ-based analog-to-digital converters (ADCs) have the advantage in current sensitivity, which can reach less than 10 nA in a well-tuned ADC. We have also developed the design technology of the SFQ circuits. We demonstrate high-speed operation of large-scale integrated circuits such as a 2x2 cross/bar switch, arithmetic logic unit, indicating that our present SFQ technology is applicable to the multi radiation detectors system. (author)

Application of solid state nuclear track detectors in radiation protection

International Nuclear Information System (INIS)

Ramachandran, T.V.; Subba Ramu, M.C.; Mishra, U.C.

1989-01-01

This article reviews the current status of the application of nuclear track detectors with emphasis on recent developments in the field of radiation protection. Track etch detectors have been used for the measurements of low level radiation in the environment, fast neutron and radon daughter inhalation dose. Recent developments in the field of dosimetry seem to be promising. In fast neutron dosimetry, track etch detectors can be used without inclusion of fissile materials by using the electrochemical etching technique. These detectors can provide important information in the energy range upto 250 keV. Survey of this range of energy with TLD is difficult because they are extremely energy dependent and over-respond to low energy neutrons. Measurement of radon using track detectors can help to lower the cost of the radon dosimeters. Certain detectors are sensitive to alpha particles from radon and their progeny. Higher sensitivity permits their use in a passive type of personnel dosimeter, which does not require the troublesome aspects of air sampling for the collection of radon daughter samples. (author), 38 refs., 8 tabs., 12 figs

Radiation detectors as surveillance monitors for IAEA safeguards

International Nuclear Information System (INIS)

Fehlau, P.E.; Dowdy, E.J.

1980-10-01

Radiation detectors used for personnel dosimetry are examined for use under IAEA Safeguards as monitors to confirm the passage or nonpassage (YES/NO) of plutonium-bearing nuclear material at barrier penetrations declared closed. In this application where backgrounds are ill defined, no advantage is found for a particular detector type because of intrinsic efficiency. Secondary considerations such as complexity, ease of tamper-proofing, and ease of readout are used to recommend specific detector types for routine monitoring and for data-base measurements. Recommendations are made for applications, data acquisition, and instrument development

Radiation detectors as surveillance monitors for IAEA safeguards

Energy Technology Data Exchange (ETDEWEB)

Fehlau, P.E.; Dowdy, E.J.

1980-10-01

Radiation detectors used for personnel dosimetry are examined for use under IAEA Safeguards as monitors to confirm the passage or nonpassage (YES/NO) of plutonium-bearing nuclear material at barrier penetrations declared closed. In this application where backgrounds are ill defined, no advantage is found for a particular detector type because of intrinsic efficiency. Secondary considerations such as complexity, ease of tamper-proofing, and ease of readout are used to recommend specific detector types for routine monitoring and for data-base measurements. Recommendations are made for applications, data acquisition, and instrument development.

175th International School of Physics "Enrico Fermi" : Radiation and Particle Detectors

CERN Document Server

Bottigli, U; Oliva, P

2010-01-01

High energy physics (HEP) has a crucial role in the context of fundamental physics. HEP experiments make use of a massive array of sophisticated detectors to analyze the particles produced in high-energy scattering events. This book contains the papers from the workshop 'Radiation and Particle Detectors', organized by the International School of Physics, and held in Varenna in July 2009. Its subject is the use of detectors for research in fundamental physics, astro-particle physics and applied physics. Subjects covered include the measurement of: the position and length of ionization trails, time of flight velocity, radius of curvature after bending the paths of charged particles with magnetic fields, coherent transition radiation, synchrotron radiation, electro-magnetic showers produced by calorimetric methods and nuclear cascades produced by hadrons in massive steel detectors using calorimetry. Detecting muons and the detection of Cherenkov radiation are also covered, as is the detection of neutrinos by ste...

Review of the Radiation Environment in the Inner Detector

CERN Document Server

Dawson, I

2000-01-01

The radiation environment in the inner detector has been simulated using the particle transport program FLUKA with a recent description of the ATLAS experiment. Given in this note are particle fluences and doses at positions relevant to the PIXEL, SCT and TRT detectors. In addition, studies are reported on in which 1) information concerning the optimisation of the inner detector neutron-moderators is obtained and 2) the impact of including additional vacuum-equipment is assessed.

Radiation damage study in CZT matrix detectors exposed to gamma rays

International Nuclear Information System (INIS)

Leyva Fabelo, Antonio; Pinnera Hernandez, Ibrahin; Cruz Inclan, Carlos Manuel; Abreu Alfonso, Yamiel; Dona Lemus, Olga; Diaz Garcia, Angelina; Montanno Zetina, Luis Manuel

2009-01-01

Radiation damage in terms of atomic displacements in a typical CZT detector used in medical imaging applications was studied using the Monte Carlo statistical method. All detector structural and geometric features as well as different energies of the photons usually used in the application were taken into account. Considering the Mott McKinley Feshbach classical approach, effective cross sections of the displacements were calculated, including the number of displacements per atom for each atomic species present in the material and each photon energy considered. These results are analyzed and compared. Finally, the radiation damage on CZT detector is compared to that calculated in a similar detector manufactured with other semiconducting materials. (author)

Notification determining technical standards concerning prevention of radiation injuries by electron capture detectors for gas chromatography

International Nuclear Information System (INIS)

1981-01-01

This rule is established under the provisions of the law on the prevention of radiation injuries by radioisotopes, the ordinance and the regulation for the execution of the law. This rule is applied to electron capture detectors for gas chromatography under the law. Basic terms are defined, such as detector radiation source, detector container and carrier gas. The detectors shall consist of detector radiation sources and containers, and the containers must be such that the radiation sources can not be easily taken away and never cause the danger to fall off. The induction and discharge mouths of the detector containers shall be shut tightly with caps, etc. The main structures and radiation sources of detectors shall be made of materials, which are difficult to corrode, and do not melt and easily cause chemical change below 800 deg. C. Detector radiation sources shall be made of metals plated with nickel 63 less than 20 milli-curie. The radiation dose rate on the surface of a detector shall be shielded to less than 0.06 milli-rem an hour. The temperature of detectors and carrier gas shall not exceed 350 deg. C. Corrosive gas shall not be used as carrier gas. The period of effective indication is 5 years. The method of washing, and the conditions of leak, heat-resistance and shock-resistance examinations are defined, respectively. (Okada, K.)

Evaluation of the radiation field in the future circular collider detector

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00211473; Cerutti, Francesco; Ferrari, Alfredo; Riegler, Werner; Vlachoudis, Vasilis; CERN. Geneva. ATS Department

2016-01-01

The radiation load on a detector at a 100 TeV proton-proton collider, that is being investigated within the Future Circular Collider (FCC) study, is presented. A peak luminosity of 30 1034 cm−2s−1 and a total integrated luminosity of 30 ab−1 are assumed for these radiation studies. A first concept of the detector foresees the presence of central and forward sub-detectors that provide acceptance up to |η|=6 inside a magnetic field generated by the combination of a central solenoid and two forward dipoles. This layout has been modelled and relevant fluence and dose distributions have been calculated using the FLUKA Monte Carlo code. Distributions of fluence rates are discussed separately for charged particles, neutrons and pho- tons. Dose and 1 MeV neutron equivalent fluence, for the accumulated integrated luminosity, are presented. The peak values of these quantities in the different sub-detectors are highlighted, in order to define the radiation tolerance requirements for the choice of possible technol...

N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

International Nuclear Information System (INIS)

Desalvo, G.C.; Mueller, E.H.; Barnett, A.M.

1985-01-01

The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency

Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

CERN Document Server

Giugliarelli, Gilberto; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

CERN Document Server

Wallangen, Veronica; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10$^{15}$ n$_\\mathrm{eq}$/cm$^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This work presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS detector.

Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

International Nuclear Information System (INIS)

Verbitskaya, E.; Eremin, V.; Ivanov, A.; Strokan, N.; Vasilev, V.; Markov, A.; Polyakov, A.; Gavrin, V.; Kozlova, Yu.; Veretenkin, E.; Bowles, T.J.

2000-01-01

The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p + -i-n + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E v +0.075 eV, presumably assigned to Ga antisite and its influence on the concentration of the ionized deep donor level EL2 +

Advances in the project about Pin type silicon radiation detectors

International Nuclear Information System (INIS)

Ramirez F, J.; Cerdeira, A.; Aceves, M.; Diaz, A.; Estrada, M.; Rosales, P.; Cabal, A.E.; Montano L, M.; Leyva, A.

1998-01-01

The obtained advances in the collaboration project ININ-CINVESTAV about development of Pin type semiconductor radiation detectors here are presented. It has been characterized the response to different types of radiation made in CINVESTAV and INAOE. Measurements have been realized with different types of sensitive to charge preamplifiers determining the main characteristics which must be executed to be able to be employed with low capacitance detectors. As applications it has been possible to measure the irradiation time in a mammography machine and X-ray energy spectra have been obtained in the order of 14 KeV, with 4 KeV at ambient temperature. The future actions of project have been indicated and the possible applications of these detectors. (Author)

Non-Destructive Spent Fuel Characterization with Semiconducting Gallium Arsinde Neutron Imaging Arrays

International Nuclear Information System (INIS)

McGregor, Douglas S.; Gersch, Holly K.; Sanders, Jeffrey D.; Lee, John C.; Hammig, Mark D.; Hartman, Michael R.; Yong Hong Yang; Klann, Raymond T.; Elzen, Brian Van Der; Lindsay, John T.; Simpson, Philip A.

2002-01-01

High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency

Radiation hard silicon particle detectors for HL-LHC—RD50 status report

Energy Technology Data Exchange (ETDEWEB)

Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

2017-02-11

It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

Detection of gamma-neutron radiation by solid-state scintillation detectors. Detection of gamma-neutron radiation by novel solid-state scintillation detectors

Energy Technology Data Exchange (ETDEWEB)

Ryzhikov, V.; Grinyov, B.; Piven, L.; Onyshchenko, G.; Sidletskiy, O. [Institute for Scintillation Materials of the NAS of Ukraine, Kharkov, (Ukraine); Naydenov, S. [Institute for Single Crystals of the National Academy of Sciences of Ukraine, Kharkov, (Ukraine); Pochet, T. [DETEC-Europe, Vannes (France); Smith, C. [Naval Postgraduate School, Monterey, CA (United States)

2015-07-01

It is known that solid-state scintillators can be used for detection of both gamma radiation and neutron flux. In the past, neutron detection efficiencies of such solid-state scintillators did not exceed 5-7%. At the same time it is known that the detection efficiency of the gamma-neutron radiation characteristic of nuclear fissionable materials is by an order of magnitude higher than the efficiency of detection of neutron fluxes alone. Thus, an important objective is the creation of detection systems that are both highly efficient in gamma-neutron detection and also capable of exhibiting high gamma suppression for use in the role of detection of neutron radiation. In this work, we present the results of our experimental and theoretical studies on the detection efficiency of fast neutrons from a {sup 239}Pu-Be source by the heavy oxide scintillators BGO, GSO, CWO and ZWO, as well as ZnSe(Te, O). The most probable mechanism of fast neutron interaction with nuclei of heavy oxide scintillators is the inelastic scattering (n, n'γ) reaction. In our work, fast neutron detection efficiencies were determined by the method of internal counting of gamma-quanta that emerge in the scintillator from (n, n''γ) reactions on scintillator nuclei with the resulting gamma energies of ∼20-300 keV. The measured efficiency of neutron detection for the scintillation crystals we considered was ∼40-50 %. The present work included a detailed analysis of detection efficiency as a function of detector and area of the working surface, as well as a search for new ways to create larger-sized detectors of lower cost. As a result of our studies, we have found an unusual dependence of fast neutron detection efficiency upon thickness of the oxide scintillators. An explanation for this anomaly may involve the competition of two factors that accompany inelastic scattering on the heavy atomic nuclei. The transformation of the energy spectrum of neutrons involved in the (n, n

Silicon carbide and its use as a radiation detector material

International Nuclear Information System (INIS)

Nava, F; Bertuccio, G; Cavallini, A; Vittone, E

2008-01-01

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation. (topical review)

Technologies pioneered by LHC. Superconducting magnet and radiation-tolerant tracking detector

International Nuclear Information System (INIS)

Yamamoto, Akira; Unno, Yoshinobu

2007-01-01

In the LHC project of proton-proton collisions exploring the energy frontier, superconducting magnets and radiation-tolerant tracking detector play fundamental roles as key technologies. The superconducting magnets contribute to bending and focusing particle beam by using high magnetic field created with the NbTi superconductor cooled to the superfluid temperature of He (1.9 K). In order to overcome the unprecedented radiation damage and to capture the particles emerging with high energy and high density, the large area and highly radiation-tolerant silicon semiconductor tracking detector has been developed for the LHC experiment. (author)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

Energy Technology Data Exchange (ETDEWEB)

Johansen, Lars Gimmestad

2005-07-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

International Nuclear Information System (INIS)

Johansen, Lars Gimmestad

2005-06-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Test of radiation hardness of pcCVD detectors

Energy Technology Data Exchange (ETDEWEB)

Schlemme, Steffen [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Enders, Joachim [Technische Universitaet Darmstadt (Germany); Figuera, P.; Salamone, S. [LNS-INFN Catania (Italy); Fruehauf, J.; Kis, Mladen; Kratz, A.; Kurz, N.; Loechner, S.; Nociforo, Chiara; Schirru, Fabio; Szczepanczyk, B.; Traeger, M.; Visinka, R. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Musumarra, A. [LNS-INFN Catania (Italy); University of Catania (Italy)

2016-07-01

The new in-flight separator Super-FRS is under construction at the Facility for Antiproton and Ion Research (FAIR, Darmstadt). Ion rates up to 3 x 10{sup 11} {sup 238}U/spill demand an adaption of detectors to a high radiation environment. A test experiment to investigate the radiation hardness of polycrystalline diamond detectors (pcCVD) was performed at the LNS-INFN in Catania using a {sup 12}C beam at 62 MeV/u and intensities of up to 1.5 pnA. The setup consisted of pcCVD strip detectors to measure the beam profile, a single crystal diamond detector to calibrate the ionisation chamber working in current mode as a beam intensity monitor and a pcCVD sample to be irradiated. The IC used was designed for FAIR and showed a stable counting rate allowing us to calibrate and perform beam intensity measurements with it. The total measured counts on the sample were 8.25 x 10{sup 11} counts/mm{sup 2} over a period of 60 hours. Digital waveforms of the pcCVD signals were taken with an oscilloscope and analysed. The results showed no change of the pcCVD signal properties during the entire irradiation.

The ALICE Transition Radiation Detector: construction, operation, and performance

OpenAIRE

Acharya, Shreyasi; Adam, Jaroslav; Ahmad, Nazeer; Bhattacharjee, Buddhadeb; Turrisi, Rosario; Tveter, Trine Spedstad; Ullaland, Kjetil; Umaka, Ejiro Naomi; Uras, Antonio; Usai, Gianluca; Utrobicic, Antonija; Vala, Martin; Van Der Maarel, Jasper; Van Hoorne, Jacobus Willem; Bhom, Jihyun

2018-01-01

The Transition Radiation Detector (TRD) was designed and built to enhance the capabilities of the ALICE detector at the Large Hadron Collider (LHC). While aimed at providing electron identification and triggering, the TRD also contributes significantly to the track reconstruction and calibration in the central barrel of ALICE. In this paper the design, construction, operation, and performance of this detector are discussed. A pion rejection factor of up to 410 is achieved at a momentum of 1 G...

Semiconductor scintillator detector for gamma radiation

International Nuclear Information System (INIS)

Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S.

2015-01-01

Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

Design and construction of the prototype synchrotron radiation detector

CERN Document Server

Anderhub, H; Baetzner, D; Baumgartner, S; Biland, A; Camps, C; Capell, M; Commichau, V; Djambazov, L; Fanchiang, Y J; Flügge, G; Fritschi, M; Grimm, O; Hangarter, K; Hofer, H; Horisberger, Urs; Kan, R; Kaestli, W; Kenney, G P; Kim, G N; Kim, K S; Koutsenko, V F; Kraeber, M; Kuipers, J; Lebedev, A; Lee, M W; Lee, S C; Lewis, R; Lustermann, W; Pauss, Felicitas; Rauber, T; Ren, D; Ren, Z L; Röser, U; Son, D; Ting, Samuel C C; Tiwari, A N; Viertel, Gert M; Gunten, H V; Wicki, S W; Wang, T S; Yang, J; Zimmermann, B

2002-01-01

The Prototype Synchrotron Radiation Detector (PSRD) is a small-scale experiment designed to measure the rate of low-energy charged particles and photons in near the Earth's orbit. It is a precursor to the Synchrotron Radiation Detector (SRD), a proposed addition to the upgraded version of the Alpha Magnetic Spectrometer (AMS-02). The SRD will use the Earth's magnetic field to identify the charge sign of electrons and positrons with energies above 1 TeV by detecting the synchrotron radiation they emit in this field. The differential energy spectrum of these particles is astrophysically interesting and not well covered by the remaining components of AMS-02. Precise measurements of this spectrum offer the possibility to gain information on the acceleration mechanism and characteristics of all cosmic rays in our galactic neighbourhood. The SRD will discriminate against protons as they radiate only weakly. Both the number and energy of the synchrotron photons that the SRD needs to detect are small. The identificat...

Industrial workshop on LASL semiconductor radiation-detector research and development

International Nuclear Information System (INIS)

Endebrock, M.

1978-11-01

An Industrial Workshop on LASL Semiconductor Radiation Detector Research and Development was held at the Los Alamos Scientific Laboratory (LASL) in the spring of 1977. The purpose was to initiate communication between our detector research and development program and industry. LASL research programs were discussed with special emphasis on detector problems. Industrial needs and capabilities in detector research and development were also presented. Questions of technology transfer were addressed. The notes presented here are meant to be informal, as were the presentations

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

CERN Document Server

Fretwurst, E.; Stahl, J.; Pintilie, I.

2002-01-01

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising re...

Radiative processes for Rindler and accelerating observers and the stress-tensor detector

International Nuclear Information System (INIS)

Paola, R. De; Svaiter, N.F.

1996-04-01

It is considered a monopole detector interacting with a massive scalar field. Using the rotating wave approximation the radiative processes is discussed from the accelerated frame point of view. After this, it is obtained the Minkowski vacuum stress tensor measured by the accelerated observer using a non-gravitational stress sensor detector. Finally we analyse radiative processes of the monopole detector travelling in a world line that is inertial in the infinite past and has a constant proper acceleration in the infinite future. (author). 30 refs

Detector and quantifier of ionizing x-radiation by indirect method

International Nuclear Information System (INIS)

Pablo, Aramayo; Roberto, Cruz; Luis, Rocha; Rotger Viviana I; Olivera, Juan Manuel

2007-01-01

The work presents the development of a device able to detect and quantify ionizing radiations. The transduction principle proposed for the design of the detector consists on using the properties of the fluorescent screens able to respond to the incident radiation with a proportional brightness. Though the method is well-known, it proved necessary to optimize the design of the detectors in order to get a greater efficiency in the relationship radiation/brightness; to that purpose, different models were tried out, varying its geometry and the optoelectronic device. The resultant signal was processed and presented in a visualization system. It is important to highlight that the project is in development and the results we obtained are preliminary

Charge collection efficiency in a semiconductor radiation detector with a non-constant electric field

International Nuclear Information System (INIS)

Shah, K.S.; Lund, J.C.; Olschner, F.

1990-01-01

The development of improved semiconductor radiation detectors would be facilitated by a quantitative model that predicts the performance of these detectors as a function of material characteristics and device operating parameters. An accurate prediction of the pulse height spectrum from a radiation detector can be made if both the noise and the charge collection properties of the detector are understood. The noise characteristics of semiconductor radiation detectors have been extensively studied. The effect of noise can be closely simulated by convoluting the noise-free pulse height spectrum with a Gaussian function. Distortion of semiconductor detector's pulse height spectrum from charge collection effects is more complex than the effects of noise and is more difficult to predict. To compute these distortions it is necessary to know how the charge collection efficiency η varies as a function of position within the detector x. These effects are shown. This problem has been previously solved for planar detectors with a constant electric field, for the case of spherical detectors, and for coaxial detectors. In this paper the authors describe a more general solution to the charge collection problem which includes the case of a non-constant electric field in a planar geometry

Characteristics of fabricated si PIN-type radiation detectors on cooling temperature

Energy Technology Data Exchange (ETDEWEB)

Kim, Han Soo; Jeong, Manhee; Kim, Young Soo [Korea Atomic Energy Research Institute, Jeongeup-si 580-185 (Korea, Republic of); Lee, Dong Hun [Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of); Cho, Seung Yeon [Environmental Health Center, Yonsei University, Wonju-si 1184-4 (Korea, Republic of); Ha, Jang Ho [Korea Atomic Energy Research Institute, Jeongeup-si 580-185 (Korea, Republic of)

2015-06-01

Si PIN photodiode radiation detectors with three different active areas (3×3 mm{sup 2}, 5×5 mm{sup 2}, and 10×10 mm{sup 2}) were designed and fabricated at the Korea Atomic Energy Research Institute (KAERI) for low energy X- and gamma-ray detection. In Si-based semiconductor radiation detectors, one of the noise sources is thermal noise, which degrades their energy resolution performance. In this study, the temperature effects on the energy resolution were investigated using a 3×3 mm{sup 2} active area PIN photodiode radiation detector using a Thermoelectric Module (TEM) from room temperature to −23 °C. Energy resolutions from 25 keV auger electrons to 81 keV gamma-ray from a Ba-133 calibration source were measured and compared at every 10 °C interval. At −23 °C, energy resolutions were improved by 15.6% at 25 keV, 4.0% at 31 keV, and 1.2% at 81 keV in comparison with resolutions at room temperature. CsI(Tl)/PIN photodiode radiation detectors were also fabricated for relatively high energy gamma-ray detection. Energy resolutions for Cs-137, Co-60, and Na-22 sources were measured and compared with the spectral responsivity.

An intercomparison of detectors for measurement of background radiation

International Nuclear Information System (INIS)

Nielsen, S.P.; Boetter-Jensen, L.

1981-04-01

Measurements of the background radiation were made in 1978 at 14 locations with a high-pressure ionization chamber, thermoluminiscence dosimeters (TLD's), two NaI(Tl) detectors, and a Ge(Li) spectrometer system. Simultaneous measurements with the ionization chamber and the spectrometer system provide reliable estimates of the total background exposure rate, of the individual contributors to the terrestrial exposure rate, and of the exposure rate from the secondary cosmic radiation. The TLD results agree with those of the ionization chamber. The NaI(Tl) detector results show that accurate estimates of the terrestrial exposure rate can be obtained if empirical corrections are applied. (author)

Dual-Energy Semiconductor Detector of X-rays and Gamma Radiation

Directory of Open Access Journals (Sweden)

Brodyn, M.S.

2014-03-01

Full Text Available Analysis of the major types of ionizing radiation detectors, their advantages and disadvantages are presented. Application of ZnSe-based semiconductor detector in high temperature environment is substantiated. Different forms of ZnSe-based detector samples and double-crystal scheme for registration of X- and gamma rays in a broad energy range were used . Based on the manufactured simulator device, the study sustains the feasibility of the gamma quanta recording by a high-resistance ZnSe-based detector operating in a perpulse mode.

Mobile robot prototype detector of gamma radiation; Prototipo de robot movil detector de radiacion gamma

Energy Technology Data Exchange (ETDEWEB)

Vazquez C, R.M. [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico); Duran V, M. D.; Jardon M, C. I., E-mail: raulmario.vazquez@inin.gob.mx [Tecnologico de Estudios Superiores de Villa Guerrero, Carretera Federal Toluca-Ixtapan de la Sal Km. 64.5, La Finca Villa Guerrero, Estado de Mexico (Mexico)

2014-10-15

In this paper the technological development of a mobile robot prototype detector of gamma radiation is shown. This prototype has been developed for the purpose of algorithms implementation for the applications of terrestrial radiation monitoring of exposed sources, search for missing radioactive sources, identification and delineation of radioactive contamination areas and distribution maps generating of radioactive exposure. Mobile robot detector of radiation is an experimental technology development platform to operate in laboratory environment or flat floor facilities. The prototype integrates a driving section of differential configuration robot on wheels, a support mechanism and rotation of shielded detector, actuator controller cards, acquisition and processing of sensor data, detection algorithms programming and control actuators, data recording (Data Logger) and data transmission in wireless way. The robot in this first phase is remotely operated in wireless way with a range of approximately 150 m line of sight and can extend that range to 300 m or more with the use of signal repeaters. The gamma radiation detection is performed using a Geiger detector shielded. Scan detection is performed at various time sampling periods and diverse positions of discrete or continuous angular orientation on the horizon. The captured data are geographical coordinates of robot GPS (latitude and longitude), orientation angle of shield, counting by sampling time, date, hours, minutes and seconds. The data is saved in a file in the Micro Sd memory on the robot. They are also sent in wireless way by an X Bee card to a remote station that receives for their online monitoring on a laptop through an acquisition program by serial port on Mat Lab. Additionally a voice synthesizing card with a horn, both in the robot, periodically pronounced in Spanish, data length, latitude, orientation angle of shield and detected accounts. (Author)

Review on the characteristics of radiation detectors for dosimetry and imaging

International Nuclear Information System (INIS)

Seco, Joao; Clasie, Ben; Partridge, Mike

2014-01-01

The enormous advances in the understanding of human anatomy, physiology and pathology in recent decades have led to ever-improving methods of disease prevention, diagnosis and treatment. Many of these achievements have been enabled, at least in part, by advances in ionizing radiation detectors. Radiology has been transformed by the implementation of multi-slice CT and digital x-ray imaging systems, with silver halide films now largely obsolete for many applications. Nuclear medicine has benefited from more sensitive, faster and higher-resolution detectors delivering ever-higher SPECT and PET image quality. PET/MR systems have been enabled by the development of gamma ray detectors that can operate in high magnetic fields. These huge advances in imaging have enabled equally impressive steps forward in radiotherapy delivery accuracy, with 4DCT, PET and MRI routinely used in treatment planning and online image guidance provided by cone-beam CT. The challenge of ensuring safe, accurate and precise delivery of highly complex radiation fields has also both driven and benefited from advances in radiation detectors. Detector systems have been developed for the measurement of electron, intensity-modulated and modulated arc x-ray, proton and ion beams, and around brachytherapy sources based on a very wide range of technologies. The types of measurement performed are equally wide, encompassing commissioning and quality assurance, reference dosimetry, in vivo dosimetry and personal and environmental monitoring. In this article, we briefly introduce the general physical characteristics and properties that are commonly used to describe the behaviour and performance of both discrete and imaging detectors. The physical principles of operation of calorimeters; ionization and charge detectors; semiconductor, luminescent, scintillating and chemical detectors; and radiochromic and radiographic films are then reviewed and their principle applications discussed. Finally, a general

Detector and dosimeter for neutrons and other radiation

International Nuclear Information System (INIS)

Apfel, R.E.

1979-01-01

A radiation detector and dosimeter is based on the fact that a sufficiently finely-dispersed liquid suspended in a host liquid of high viscosity or gel is stable at temperatures above its normal boiling point for long periods of time provided it is protected from contact with walls, or other types of initiators which can cause volatilization or vaporization of the droplets. Radiation, and particularly neutron radiation of sufficient energy and intensity on coming in contact with such droplets can trigger volatilization. The volume of vapor evolved can then serve as a measure of radiation intensity and dosage

Recent advances in MEMS radiation detectors for improving radiation safety in nuclear reactors

International Nuclear Information System (INIS)

Bhisikar, Abhay

2016-01-01

MEMS (micro-electro-mechanical-system) is a core technology that leverages integrated circuit (IC) fabrication technology, builds ultra-miniaturized components and, enables radical new system applications. When considering MEMS radiation detectors; they are the specific micromechanical structures which are designed to sense doses of radiations. The present article reviews the most recent progress made in the domain of MEMS ionizing radiation sensors at international level for nuclear reactors which can be relevant to Indian context. (author)

SENTIRAD-An innovative personal radiation detector based on a scintillation detector and a silicon photomultiplier

International Nuclear Information System (INIS)

Osovizky, A.; Ginzburg, D.; Manor, A.; Seif, R.; Ghelman, M.; Cohen-Zada, I.; Ellenbogen, M.; Bronfenmakher, V.; Pushkarsky, V.; Gonen, E.; Mazor, T.; Cohen, Y.

2011-01-01

The alarming personal radiation detector (PRD) is a device intended for Homeland Security (HLS) applications. This portable device is designed to be worn or carried by security personnel to detect photon-emitting radioactive materials for the purpose of crime prevention. PRD is required to meet the scope of specifications defined by various HLS standards for radiation detection. It is mandatory that the device be sensitive and simultaneously small, pocket-sized, of robust mechanical design and carriable on the user's body. To serve these specialized purposes and requirements, we developed the SENTIRAD, a new radiation detector designed to meet the performance criteria established for counterterrorist applications. SENTIRAD is the first commercially available PRD based on a CsI(Tl) scintillation crystal that is optically coupled with a silicon photomultiplier (SiPM) serving as a light sensor. The rapidly developing technology of SiPM, a multipixel semiconductor photodiode that operates in Geiger mode, has been thoroughly investigated in previous studies. This paper presents the design considerations, constraints and radiological performance relating to the SENTIRAD radiation sensor.

Test-beam Results from a RICH Detector Prototype Using Aerogel Radiator and Pixel Hybrid Photon Detectors

CERN Document Server

Aglieri-Rinella, G; Van Lysebetten, A; Piedigrossi, D; Wyllie, K; Bellunato, T F; Calvi, M; Matteuzzi, C; Musy, M; Perego, D L; Somerville, L P; Newby, C; Easo, S; Wotton, S

2006-01-01

A test-beam study was performed at CERN with a Ring Imaging Cherenkov (RICH) prototype using three pixel Hybrid Photon Detectors. Results on the photon yield and Cherenkov angle resolution are presented here, for the Aerogel radiator and also for reference runs taken with Nitrogen radiator.

Radiation imaging with optically read out GEM-based detectors

Science.gov (United States)

Brunbauer, F. M.; Lupberger, M.; Oliveri, E.; Resnati, F.; Ropelewski, L.; Streli, C.; Thuiner, P.; van Stenis, M.

2018-02-01

Modern imaging sensors allow for high granularity optical readout of radiation detectors such as MicroPattern Gaseous Detectors (MPGDs). Taking advantage of the high signal amplification factors achievable by MPGD technologies such as Gaseous Electron Multipliers (GEMs), highly sensitive detectors can be realised and employing gas mixtures with strong scintillation yield in the visible wavelength regime, optical readout of such detectors can provide high-resolution event representations. Applications from X-ray imaging to fluoroscopy and tomography profit from the good spatial resolution of optical readout and the possibility to obtain images without the need for extensive reconstruction. Sensitivity to low-energy X-rays and energy resolution permit energy resolved imaging and material distinction in X-ray fluorescence measurements. Additionally, the low material budget of gaseous detectors and the possibility to couple scintillation light to imaging sensors via fibres or mirrors makes optically read out GEMs an ideal candidate for beam monitoring detectors in high energy physics as well as radiotherapy. We present applications and achievements of optically read out GEM-based detectors including high spatial resolution imaging and X-ray fluorescence measurements as an alternative readout approach for MPGDs. A detector concept for low intensity applications such as X-ray crystallography, which maximises detection efficiency with a thick conversion region but mitigates parallax-induced broadening is presented and beam monitoring capabilities of optical readout are explored. Augmenting high resolution 2D projections of particle tracks obtained with optical readout with timing information from fast photon detectors or transparent anodes for charge readout, 3D reconstruction of particle trajectories can be performed and permits the realisation of optically read out time projection chambers. Combining readily available high performance imaging sensors with compatible

A detector for localizing diverging beams of ionizing radiations

International Nuclear Information System (INIS)

Allemand, Robert.

1974-01-01

Description is given of a detector for localizing diverging radiation beams, adapted to provide the angular distribution of nuclear events. That detector comprises a casing filled with a fluid adapted to produce electric charges under radiations and provided with a front-side and a rear-side, means for generating an electric field at right angles to portions of parallel surfaces of revolution having in common an axis of revolution contained in the place of symmetry, and a plane unit for localizing electric charges mounted at the rear of said means, the initial portion of the beam being on the axis of revolution. This can be applied to X-ray diffraction and to neutron diffraction [fr

Multi-detector environmental radiation monitor with multichannel data communication for Indian Environmental Radiation Monitoring Network (IERMON)

International Nuclear Information System (INIS)

Patel, M.D.; Ratheesh, M.P.; Prakasha, M.S.; Salunkhe, S.S.; Vinod Kumar, A.; Puranik, V.D.; Nair, C.K.G.

2011-01-01

A solar powered system for online monitoring of environmental radiation with multiple detectors has been designed, developed and produced. Multiple GM tube detectors have been used to extend the range of measurement from 50 nano Gy/hr to 20 Gy/hr and to enhance the reliability of the system. Online data communication using GSM based and direct LAN based communication has been incorporated. Options for use of power supply from mains powered and battery powered have been enabled. Care has been taken to make it weather-proof, compact, elegant and reliable. The development is a part of the ongoing program of country-wide deployment of radiation monitors under 'Indian Environmental Radiation MOnitoring Network' (IERMON). (author)

A review of advances in pixel detectors for experiments with high rate and radiation

Science.gov (United States)

Garcia-Sciveres, Maurice; Wermes, Norbert

2018-06-01

The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the high luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.

Passivation layer of Si/Li ionizing radiation detectors

International Nuclear Information System (INIS)

Vidra, M.; Reznicek, L.

1992-01-01

The proposed passivating layer of Si/Li ionizing radiation detectors ensures a good long-time stability of their volt-ampere characteristics and noise properties. The layer can be applied to protect the detector junction surface in systems cyclically cooled to liquid nitrogen temperature, and in preamplifier feedback optoelectronics to prevent light from entering into the detector. The passivating layer is obtained by evaporating solvent from a cured suspension of boron nitride or aluminium oxide powder in a solution containing piceine and a nonpolar solvent such as toluene. The weight proportions are 1 to 8 parts of piceine, 3 to 9 parts of boron nitride or aluminium oxide, and 1 to 10 parts of the nonpolar solvent. (Z.S.)

VeriTainer radiation detector for intermodal shipping containers

International Nuclear Information System (INIS)

Redus, R.H.; Alioto, M.; Sperry, D.; Pantazis, T.

2007-01-01

The VeriSpreader TM radiation detection system will monitor every container passing through a shipping terminal without impeding the flow of commerce by making the radiation measurements during normal container handling. This is accomplished by integrating neutron and spectroscopic γ-ray detectors into a container crane spreader bar, the part of the crane that directly engages the intermodal shipping containers while moving from ship to shore and vice versa. The use of a spectroscopic γ-detector reduces the rate of nuisance alarms due to naturally occurring radioactive material (NORM). The combination of γ and neutron detection reduces the effectiveness of shielding and countermeasures. The challenges in this spreader bar-based approach arise from the harsh environment, particularly the mechanical shock and the vibration of the moving spreader bar, since the measurement is taken while the container is moving. The electrical interfaces in the port environment, from the crane to a central monitoring office, present further challenges. It is the packaging, electronic interfaces, and data processing software that distinguish this system, which is based on conventional radiation sensors. The core of the system is Amptek's GAMMA-RAD, which integrates a ruggedized scintillator/PMT, digital pulse shaping electronics, electronics for the neutron detector, power supplies, and an Ethernet interface. The design of the VeriTainer system and results from both the laboratory and a proof-of-concept test at the Port of Oakland, California will be presented

Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

Science.gov (United States)

Majewski, Stanislaw; Kross, Brian J.; Zorn, Carl J.; Majewski, Lukasz A.

1996-01-01

An optimized examination system and method based on the Reverse Geometry X-Ray.RTM. (RGX.RTM.) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging.

Improvement of radiation response characteristic on CdTe detectors using fast neutron irradiation

International Nuclear Information System (INIS)

Miyamaru, Hiroyuki; Takahashi, Akito; Iida, Toshiyuki

1999-01-01

The treatment of fast neutron pre-irradiation was applied to a CdTe radiation detector in order to improve radiation response characteristic. Electron transport property of the detector was changed by the irradiation effect to suppress pulse amplitude fluctuation in risetime. Spectroscopic performance of the pre-irradiated detector was compared with the original. Additionally, the pre-irradiated detector was employed with a detection system using electrical signal processing of risetime discrimination (RTD). Pulse height spectra of 241 Am, 133 Ba, and 137 Cs gamma rays were measured to examine the change of the detector performance. The experimental results indicated that response characteristic for high-energy photons was improved by the pre-irradiation. The combination of the pre-irradiated detector and the RTD processing was found to provide further enhancement of the energy resolution. Application of fast neutron irradiation effect to the CdTe detector was demonstrated. (author)

The ALICE Transition Radiation Detector: status and perspectives for Run II

CERN Document Server

Klein, Jochen

2016-01-01

The ALICE Transition Radiation Detector contributes to the tracking, particle identification, and triggering capabilities of the experiment. It is composed of six layers of multi-wire proportional chambers, each of which is preceded by a radiator and a Xe/CO$_2$-filled drift volume. The signal is sampled in timebins of 100~ns over the drift length which allows for the reconstruction of chamber-wise track segments, both online and offline. The particle identification is based on the specific energy loss of charged particles and additional transition radiation photons, the latter being a signature for electrons. The detector is segmented into 18 sectors, of which 13 were installed in Run I. The TRD was included in data taking since the LHC start-up and was successfully used for electron identification and triggering. During the Long Shutdown 1, the detector was completed and now covers the full azimuthal acceptance. Furthermore, the readout and trigger components were upgraded. When data taking was started for ...

High temperature GaAs X-ray detectors

Science.gov (United States)

Lioliou, G.; Whitaker, M. D. C.; Barnett, A. M.

2017-12-01

Two GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 °C to -20 °C. The devices had 10 μm thick i layers with different diameters: 200 μm (D1) and 400 μm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 °C to 0.66 keV at -20 °C for the spectrometer with D1, and from 2.71 keV at 100 °C to 0.71 keV at -20 °C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.

Semiconductor scintillator detector for gamma radiation; Detector cintilador semicondutor para radiacao gama

Energy Technology Data Exchange (ETDEWEB)

Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S., E-mail: ftvdl@ufrgs.br, E-mail: borges@ufrgs.br, E-mail: jorge.zabadal@ufrgs.br [Universidade Federal do Rio Grande do Sul (GENUC/DEMEC/UFRGS), Porto Alegre, RS (Brazil). Grupo de Estudos Nucleares. Departamento de Engenharia Mecanica

2015-07-01

Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

Performance of an LPD prototype detector at MHz frame rates under Synchrotron and FEL radiation

Science.gov (United States)

Koch, A.; Hart, M.; Nicholls, T.; Angelsen, C.; Coughlan, J.; French, M.; Hauf, S.; Kuster, M.; Sztuk-Dambietz, J.; Turcato, M.; Carini, G. A.; Chollet, M.; Herrmann, S. C.; Lemke, H. T.; Nelson, S.; Song, S.; Weaver, M.; Zhu, D.; Meents, A.; Fischer, P.

2013-11-01

A MHz frame rate X-ray area detector (LPD — Large Pixel Detector) is under development by the Rutherford Appleton Laboratory for the European XFEL. The detector will have 1 million pixels and allows analogue storage of 512 images taken at 4.5 MHz in the detector front end. The LPD detector has 500 μm thick silicon sensor tiles that are bump bonded to a readout ASIC. The ASIC's preamplifier provides relatively low noise at high speed which results in a high dynamic range of 105 photons over an energy range of 5-20 keV. Small scale prototypes of 32 × 256 pixels (LPD 2-Tile detector) and 256 × 256 pixels (LPD supermodule detector) are now available for X-ray tests. The performance of prototypes of the detector is reported for first tests under synchrotron radiation (PETRA III at DESY) and Free-Electron-Laser radiation (LCLS at SLAC). The initial performance of the detector in terms of signal range and noise, radiation hardness and spatial and temporal response are reported. The main result is that the 4.5 MHz sampling detection chain is reliably working, including the analogue on-chip memory concept. The detector is at least radiation hard up to 5 MGy at 12 keV. In addition the multiple gain concept has been demonstrated over a dynamic range to 104 at 12 keV with a readout noise equivalent to < 1 photon rms in its most sensitive mode.

Semidetector-radiation detector arrangement, as well as its application in a tomographic scanner, in a device to determine radiation intensity or to measure the radiation penetration or absorption

International Nuclear Information System (INIS)

Kaufman, L.; Hosier, K.E. Jr.

1979-01-01

The CdTe detector or a plate with several CdTe or HgI 2 detectors is suitable for use in computer controlled tomographic X-ray scanners. The detector is used in connection with a pulsed radiation source (Am 241) and a frequency filter technique for measuring the resulting electrical charge pulse of the detector. Merely a narrow frequency band is selected according to the measured duration of the incident radiation pulses. (DG) [de

Calculating the Responses of Self-Powered Radiation Detectors.

Science.gov (United States)

Thornton, D. A.

Available from UMI in association with The British Library. The aim of this research is to review and develop the theoretical understanding of the responses of Self -Powered Radiation Detectors (SPDs) in Pressurized Water Reactors (PWRs). Two very different models are considered. A simple analytic model of the responses of SPDs to neutrons and gamma radiation is presented. It is a development of the work of several previous authors and has been incorporated into a computer program (called GENSPD), the predictions of which have been compared with experimental and theoretical results reported in the literature. Generally, the comparisons show reasonable consistency; where there is poor agreement explanations have been sought and presented. Two major limitations of analytic models have been identified; neglect of current generation in insulators and over-simplified electron transport treatments. Both of these are developed in the current work. A second model based on the Explicit Representation of Radiation Sources and Transport (ERRST) is presented and evaluated for several SPDs in a PWR at beginning of life. The model incorporates simulation of the production and subsequent transport of neutrons, gamma rays and electrons, both internal and external to the detector. Neutron fluxes and fuel power ratings have been evaluated with core physics calculations. Neutron interaction rates in assembly and detector materials have been evaluated in lattice calculations employing deterministic transport and diffusion methods. The transport of the reactor gamma radiation has been calculated with Monte Carlo, adjusted diffusion and point-kernel methods. The electron flux associated with the reactor gamma field as well as the internal charge deposition effects of the transport of photons and electrons have been calculated with coupled Monte Carlo calculations of photon and electron transport. The predicted response of a SPD is evaluated as the sum of contributions from individual

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Radiation damage measurements in room temperature semiconductor radiation detectors

International Nuclear Information System (INIS)

Franks, L.A.; Olsen, R.W.; James, R.B.; Brunett, B.A.; Walsh, D.S.; Doyle, B.L.; Vizkelethy, G.; Trombka, J.I.

1998-01-01

The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI 2 ) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 10 p/cm 2 and significant bulk leakage after 10 12 p/cm 2 . CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 x 10 9 p/cm 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10 10 n/cm 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 x 10 10 α/cm 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 x 10 9 α/cm 2 . CT detectors show resolution losses after fluences of 3 x 10 9 p/cm 2 at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 x 10 10 n/cm 2 . Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10 12 p/cm 2 and with 1.5 GeV protons at fluences up to 1.2 x 10 8 p/cm 2 . Neutron exposures at 8 MeV have been reported at fluences up to 10 15 n/cm 2 . No radiation damage was reported under these irradiation conditions

Ionization detector with improved radiation source

International Nuclear Information System (INIS)

Solomon, E.F.

1977-01-01

The detector comprises a chamber having at least one radiation source disposed therein. The chamber includes spaced collector plates which form a part of a detection circuit for sensing changes in the ionization current in the chamber. The radiation source in one embodiment is in the form of a wound wire or ribbon suitably supported in the chamber and preferably a source of beta particles. The chamber may also include an adjustable electrode and the source may function as an adjustable current source by forming the wire or ribbon in an eliptical shape and rotating the structure. In another embodiment the source has a random shape and is homogeneously disposed in the chamber. 13 claims, 5 drawing figures

Radiation damage monitoring in the ATLAS pixel detector

International Nuclear Information System (INIS)

Seidel, Sally

2013-01-01

We describe the implementation of radiation damage monitoring using measurement of leakage current in the ATLAS silicon pixel sensors. The dependence of the leakage current upon the integrated luminosity is presented. The measurement of the radiation damage corresponding to an integrated luminosity 5.6 fb −1 is presented along with a comparison to a model. -- Highlights: ► Radiation damage monitoring via silicon leakage current is implemented in the ATLAS (LHC) pixel detector. ► Leakage currents measured are consistent with the Hamburg/Dortmund model. ► This information can be used to validate the ATLAS simulation model.

Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinski (Finland); Singh, P; Engels, E Jr; Shepard, J; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-03-01

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a [sup 137]Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 Mrad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are discribed. (orig.).

Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

International Nuclear Information System (INIS)

Laakso, M.; Helsinki Univ.; Singh, P.; Engels, E. Jr.; Shepard, P.

1992-02-01

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a 137 Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 MRad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are described. 13 refs

Design of a wire imaging synchrotron radiation detector

International Nuclear Information System (INIS)

Kent, J.; Gomez-Cadenas, J.J.; Hogan, A.; King, M.; Rowe, W.; Watson, S.; Von Zanthier, C.; Briggs, D.D.; Levi, M.

1990-01-01

This paper documents the design of a detector invented to measure the positions of synchrotron radiation beams for the precision energy spectrometers of the Stanford Linear Collider (SLC). The energy measurements involve the determination, on a pulse-by-pulse basis, of the separation of pairs of intense beams of synchrotron photons in the MeV energy range. The detector intercepts the beams with arrays of fine wires. The ejection of Compton recoil electrons results in charges being developed in the wires, thus enabling a determination of beam positions. 10 refs., 4 figs

Jagiellonian University Radiation Damage in Silicon Particle Detectors in High Luminosity Experiments

CERN Document Server

Oblakowska-Mucha, A

2017-01-01

Radiation damage is nowadays the most serious problem in silicon particle detectors placed in the very harsh radiation environment. This problem will be even more pronounced after the LHC Upgrade because of extremely strong particle fluences never encountered before. In this review, a few aspects of radiation damage in silicon trackers are presented. Among them, the change in the silicon lattice and its influence on the detector performance are discussed. Currently applied solutions and the new ideas for future experiments will be also shown. Most of the results presented in this summary were obtained within the RD50 Collaboration

Gaschromatographic proof of nitrous oxide concentrations in air by means of radiation ionization detectors

International Nuclear Information System (INIS)

Popp, P.; Schoentube, E.; Oppermann, G.

1985-01-01

For the analysis of nitrous oxide concentrations at workplaces in operating theatres, gaschromatography is a particularly suitable method if it is possible to measure nitrous oxide concentrations in the ppm to ppb region. For this, most frequently used gaschromatographic detectors (flame ionization detector, thermal conductivity detector) are unsuitable, whereas radiation ionization detectors can be used successfully. The investigations using detectors designed at the Central Institute for Isotopes and Radiation Research of the GDR Academy of Sciences showed that a high-temperature electron-capture detector (ECD), working at a temperatur of 250 0 C, enables the determination of traces of nitrous oxide with a detection limit of about 200 ppb, while the helium detector has a limit of 50 ppb of nitrous oxide in room air. Since the helium detector requires extremely pure carrier gas, the high-temperature ECD appears more suitable for analyzing nitrous oxide. (author)

Performance of fully instrumented detector planes of the forward calorimeter of a Linear Collider detector

CERN Document Server

Abramowicz, H.; Afanaciev, K.; Aguilar, J.; Alvarez, E.; Avila, D.; Benhammou, Y.; Bortko, L.; Borysov, O.; Bergholz, M.; Bozovic-Jelisavcic, I.; Castro, E.; Chelkov, G.; Coca, C.; Daniluk, W.; Dumitru, L.; Elsener, K.; Fadeyev, V.; Firlej, M.; Firu, E.; Fiutowski, T.; Ghenescu, V.; Gostkin, M.; Henschel, H.; Idzik, M.; Ishikawa, A.; Kananov, S.; Kollowa, S.; Kotov, S.; Kotula, J.; Kozhevnikov, D.; Kruchonok, V.; Krupa, B.; Kulis, Sz.; Lange, W.; Lesiak, T.; Levy, A.; Levy, I.; Lohmann, W.; Lukic, S.; Milke, C.; Moron, J.; Moszczynski, A.; Neagu, A.T.; Novgorodova, O.; Oliwa, K.; Orlandea, M.; Pandurovic, M.; Pawlik, B.; Preda, T.; Przyborowski, D.; Rosenblat, O.; Sailer, A.; Sato, Y.; Schumm, B.; Schuwalow, S.; Smiljanic, I.; Smolyanskiy, P.; Swientek, K.; Teodorescu, E.; Terlecki, P.; Wierba, W.; Wojton, T.; Yamaguchi, S.; Yamamoto, H.; Zawiejski, L.; Zgura, I.S.; Zhemchugov, A.

2015-01-01

Detector-plane prototypes of the very forward calorimetry of a future detector at an $e^+e^-$ collider have been built and their performance was measured in an electron beam. The detector plane comprises silicon or GaAs pad sensors, dedicated front-end and ADC ASICs, and an FPGA for data concentration. Measurements of the signal-to-noise ratio for different feedback schemes and the response as a function of the position of the sensor are presented. A deconvolution method is successfully applied, and a comparison of the measured shower shape as a function of the absorber depth with a Monte-Carlo simulation is given.

Stable room-temperature thallium bromide semiconductor radiation detectors

Science.gov (United States)

Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

2017-10-01

Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Stable room-temperature thallium bromide semiconductor radiation detectors

Directory of Open Access Journals (Sweden)

A. Datta

2017-10-01

Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Monte Carlo simulation of THz radiation from GaAs p-i-n diodes under high electric fields using an extended valley model

International Nuclear Information System (INIS)

Dinh Nhu Thao

2008-01-01

We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)

A gas microstrip wide angle X-ray detector for application in synchrotron radiation experiments

CERN Document Server

Bateman, J E; Derbyshire, G E; Duxbury, D M; Lipp, J; Mir, J A; Simmons, J E; Spill, E J; Stephenson, R; Dobson, B R; Farrow, R C; Helsby, W I; Mutikainen, R; Suni, I

2002-01-01

The Gas Microstrip Detector has counting rate capabilities several orders of magnitude higher than conventional wire proportional counters while providing the same (or better) energy resolution for X-rays. In addition the geometric flexibility provided by the lithographic process combined with the self-supporting properties of the substrate offers many exciting possibilities for X-ray detectors, particularly for the demanding experiments carried out on Synchrotron Radiation Sources. Using experience obtained in designing detectors for Particle Physics we have developed a detector for Wide Angle X-ray Scattering studies. The detector has a fan geometry which makes possible a gas detector with high detection efficiency, sub-millimetre spatial resolution and good energy resolution over a wide range of X-ray energy. The detector is described together with results of experiments carried out at the Daresbury Laboratory Synchrotron Radiation Source.

Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

Energy Technology Data Exchange (ETDEWEB)

Wei, Qingyu

2008-10-17

The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

International Nuclear Information System (INIS)

Wei, Qingyu

2008-01-01

The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

Experiences with radiation portal detectors for international rail transport

International Nuclear Information System (INIS)

Stromswold, David C.; McCormick, Kathleen R.; Todd, Lindsay C.; Ashbaker, Eric D.; Evans, J.C.

2006-01-01

Radiation detectors monitored trains at two international borders to evaluate the performance of NaI(Tl) and plastic (polyvinyltoluene: PVT) gamma-ray detectors to characterize rail cargo. The detectors included a prototype NaI(Tl) radiation-portal-monitor panel having four large detectors (10-cm x 10-cm x 41-cm) and a PVT panel with a 41 cm x 173 cm x 3.8-cm detector. Spectral data from the NaI(Tl) and PVT detectors were recorded. Of particular emphasis was the identification of naturally occurring radioactive material (NORM) and the resultant frequency of nuisance alarms. For rail monitoring, the difficulty in stopping trains to perform secondary inspection on alarming cars creates a need for reliable identification of NORM during initial screening. Approximately 30 trains were monitored, and the commodities in individual railcars were ascertained from manifest information. At one test site the trains carried inter-modal containers that had been unloaded from ships, and at the other site the trains contained bulk cargo or individual items in boxcars or flatbeds. NORM encountered included potash, liquefied petroleum gas, fireworks, televisions, and clay-based products (e.g., pottery). Analysis of the spectral data included the use of the template-fitting program GADRAS/FitToDB from Sandia National Laboratories. For much of the NORM the NaI(Tl) data produced a correct identification of the radionuclides present in the railcars. The same analysis was also used for PVT data in which the spectral information (no peaks but only gradual spectral changes including Compton edges) was limited. However, the PVT analysis provided correct identification of 40K and 226Ra in many cases

Cadmium telluride gamma-radiation detectors with a high energy resolution

International Nuclear Information System (INIS)

Alekseeva, L.A.; Dorogov, P.G.; Ivanov, V.I.; Khusainov, A.K.

1985-01-01

This paper considers the possibility of improving the energy resolution of cadmium telluride gamma-radiation detectors through the choice of the geometry and size of the sensitive region of the detector. The optimum ratio of the product of the mobility and lifetime for electrons to the same product for holes from the point of view of energy resolution is greater than or equal to 10 2 for a detector of spherical geometry and should be less than or equal to 10 for a cylindrical geometry and approximately 1 for a planar geometry. The optimum values of the major and minor radii of a spherical detector are calculated

Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

International Nuclear Information System (INIS)

Knoll, G.F.

1995-11-01

The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

Technical Note: Response measurement for select radiation detectors in magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Reynolds, M., E-mail: michaelreynolds@ualberta.net [Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Fallone, B. G. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2, Canada and Departments of Oncology and Physics, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Rathee, S. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2, Canada and Department of Oncology, Medical Physics Division,University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada)

2015-06-15

Purpose: Dose response to applied magnetic fields for ion chambers and solid state detectors has been investigated previously for the anticipated use in linear accelerator–magnetic resonance devices. In this investigation, the authors present the measured response of selected radiation detectors when the magnetic field is applied in the same direction as the radiation beam, i.e., a longitudinal magnetic field, to verify previous simulation only data. Methods: The dose response of a PR06C ion chamber, PTW60003 diamond detector, and IBA PFD diode detector is measured in a longitudinal magnetic field. The detectors are irradiated with buildup caps and their long axes either parallel or perpendicular to the incident photon beam. In each case, the magnetic field dose response is reported as the ratio of detector signals with to that without an applied longitudinal magnetic field. The magnetic field dose response for each unique orientation as a function of magnetic field strength was then compared to the previous simulation only studies. Results: The measured dose response of each detector in longitudinal magnetic fields shows no discernable response up to near 0.21 T. This result was expected and matches the previously published simulation only results, showing no appreciable dose response with magnetic field. Conclusions: Low field longitudinal magnetic fields have been shown to have little or no effect on the dose response of the detectors investigated and further lend credibility to previous simulation only studies.

Electrons, holes, and excitons in GaAs polytype quantum dots

Energy Technology Data Exchange (ETDEWEB)

Climente, Juan I.; Segarra, Carlos; Rajadell, Fernando; Planelles, Josep, E-mail: josep.planelles@uji.es [Departament de Química Física i Analítica, Universitat Jaume I, E-12080 Castelló (Spain)

2016-03-28

Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.

Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

International Nuclear Information System (INIS)

Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

2014-01-01

The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)

Growth of metastable fcc Mn thin film on GaAs(001) and its electronic structure studied by photoemission with synchrotron radiation

International Nuclear Information System (INIS)

Chen Yan; Dong Guosheng; Zhang Ming

1995-01-01

The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400 K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured. A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interpret the experimental result

Superconducting detectors for semiconductor quantum photonics

International Nuclear Information System (INIS)

Reithmaier, Guenther M.

2015-01-01

In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

The semi-conductor detectors: art state, new concepts

International Nuclear Information System (INIS)

Pochet, T.

1993-01-01

After a brief recall of signal formation principle in a detector and of its different operation modes, the high Z materials as CdTe, HgI 2 , GaAs ,Ge and Si are presented, followed by the new 'thin layer' semiconductors

A fast radiation-to-coherent light converter

International Nuclear Information System (INIS)

Wang, C.L.; Flatley, J.E.; Stewart, P.H.

1988-01-01

We have developed a radiation-to-coherent light converter (RCLC) with a monolithically integrated semiconductor chip that consists of a chromium-doped GaAs photoconductor detector modulates the laser diode, which has been biased above the lasing threshold, thus converting a radiation pulse to an electric pulse and then to a light pulse. The laser pulse is then transmitted to a fast recorder through a high-bandwidth optical fiber. In the absence of a single-step x-ray pumped laser, our converter appears to be the first integrated device that can efficiently convert x-ray flux into coherent light. This device has been tested successfully with the 50-ps electron beams of a 17-MeV linear accelerator and with 50-ns x-ray pulses from a Z-pinch plasma source. 2 refs., 9 figs

The transition radiation detector of the PAMELA space mission

Science.gov (United States)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; de Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2004-04-01

PAMELA space mission objective is to flight a satellite-borne magnetic spectrometer built to fulfill the primary scientific goals of detecting antiparticles (antiprotons and positrons) and to measure spectra of particles in cosmic rays. The PAMELA telescope is composed of: a silicon tracker housed in a permanent magnet, a time-of-flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD is composed of nine sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD characteristics will be described along with its performances studied at both CERN-PS and CERN-SPS facilities, using electrons, pions, muons and protons of different momenta.

The transition radiation detector of the PAMELA space mission

International Nuclear Information System (INIS)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; De Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2004-01-01

PAMELA space mission objective is to flight a satellite-borne magnetic spectrometer built to fulfill the primary scientific goals of detecting antiparticles (antiprotons and positrons) and to measure spectra of particles in cosmic rays. The PAMELA telescope is composed of: a silicon tracker housed in a permanent magnet, a time-of-flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD is composed of nine sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD characteristics will be described along with its performances studied at both CERN-PS and CERN-SPS facilities, using electrons, pions, muons and protons of different momenta

Regulation No. 0-31 on handling of radiation flaw-detectors

International Nuclear Information System (INIS)

1975-01-01

The regulation contains mandatory design, commissioning, and operational requirements for laboratories using flaw-detectors emitting ionizing radiation; also, design, manufacturing, and operational requirements for the production of any type of X-ray or gamma-ray flaw-detectors. Laboratories carrying out non-destructive testing are either stationary or mobile. Conceptual and operating designs are elaborated, including the building and the laboratory lay-outs, the mains, water supply, and sewerage system technological lay-out, explanatory comments, and a lay-out of the shielding equipment. Approbated designs are implemented, and the laboratories commissioned to representatives of the State Sanitary Inspectorate. Licences are issued by the Ministry of Public Health (MPH) and the Committee on Peaceful Uses of Atomic Energy (CPUAE). Any flaw-detector has to conform to the Bulgarian State Standards and be coordinated with the MPH, the CPUAE, and the Central Laboratory for Nuclear Flaw-Detection (CLNFD). The laboratories are required to have operational instructions, an emergency plan, and to keep technological and dosimetric records. The latter are provided and processed by the relevant service at the Research Institute of Radiobiology and Radiation Hygiene. For operations involving of flaw-detectors, presence of at least two workers is required. (G.G.)

Spectral Analysis Method of Plastic Scintillator-based Radiation Detector against Nuclear/Radiological Terrorism

International Nuclear Information System (INIS)

Kwak, Sung-Woo; Yoo, Ho-Sik; Jang, Sung Soon; Kim, Jung-Soo; Yoon, Wan-Ki

2008-01-01

In these days, the threats relating to nuclear or radioactive materials have become a matter of internationally increased grave concern. A plastic scintillation detector in radiation portal monitoring (RPM) application has been used to detect radioactive sources in steel scrap entering reprocessing facilities, and to detect illicit transport of radioactive material across border ports-of-entry. The detection systems for RPM application usually are large and can not easily be moved to a different location. For some situations, an inconspicuous and mobile system for the radioactive or nuclear material during road transport is needed. The mobile radiation detection system has employed a NaI- based radiation detector to detect and identify the material hidden in vehicle. There are some operational constraints - short measuring time, weak activity due to heavy shield of illegal source, long distance - of inspection system in such nuclear security applications. Due to these constraints, large area sensor is required to maximize its sensitivity. Large NaI material, however, is extremely expensive. In designing a radiation detector for prevention of illicit trafficking of nuclear or radioactive materials, the trade-off should be carefully optimized between performance and cost in order to achieve cost-effective inspection system. For the cost-effective mobile radiation detection system, this paper describes new spectral analysis method to use the crude spectroscopic information available from a plastic detector to discriminate other man-made radiation source from NORM

Lithium compensation of GaAs

International Nuclear Information System (INIS)

Alexiev, D.; Tavendale, A.J.

1988-08-01

Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments, the effect of Li diffusion on existing trap spectra, defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature, initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made

Scintillation characteristics of phosphich-detector for detection of beta- and gamma-radiations

CERN Document Server

Ananenko, A A; Gavrilyuk, V

2002-01-01

The results of the study on the influence of individual peculiarities of the compound scintillation detector structure on the value and stability of the light yield by the gamma- and beta-radiation combined registration are presented. The phosphich detector is manufactured from the sodium iodide monocrystal, activated by thallium, and the scintillation plastic on the polystyrol basis. The comparison of the experimental results with the mathematical modeling data revealed certain regularities of the process of forming the phosphich detector light signal. The recommendations are worked out by means whereof the following characteristics of the scintillation unit: the light yield and its stability, amplitude resolution and the peak-to-valley ratio by the gamma- and beta-radiation registration were improved

The iQID camera: An ionizing-radiation quantum imaging detector

Energy Technology Data Exchange (ETDEWEB)

Miller, Brian W., E-mail: brian.miller@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); College of Optical Sciences, The University of Arizona, Tucson, AZ 85719 (United States); Gregory, Stephanie J.; Fuller, Erin S. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Barrett, Harrison H.; Bradford Barber, H.; Furenlid, Lars R. [Center for Gamma-Ray Imaging, The University of Arizona, Tucson, AZ 85719 (United States); College of Optical Sciences, The University of Arizona, Tucson, AZ 85719 (United States)

2014-12-11

We have developed and tested a novel, ionizing-radiation Quantum Imaging Detector (iQID). This scintillation-based detector was originally developed as a high-resolution gamma-ray imager, called BazookaSPECT, for use in single-photon emission computed tomography (SPECT). Recently, we have investigated the detector's response and imaging potential with other forms of ionizing radiation including alpha, neutron, beta, and fission fragment particles. The confirmed response to this broad range of ionizing radiation has prompted its new title. The principle operation of the iQID camera involves coupling a scintillator to an image intensifier. The scintillation light generated by particle interactions is optically amplified by the intensifier and then re-imaged onto a CCD/CMOS camera sensor. The intensifier provides sufficient optical gain that practically any CCD/CMOS camera can be used to image ionizing radiation. The spatial location and energy of individual particles are estimated on an event-by-event basis in real time using image analysis algorithms on high-performance graphics processing hardware. Distinguishing features of the iQID camera include portability, large active areas, excellent detection efficiency for charged particles, and high spatial resolution (tens of microns). Although modest, iQID has energy resolution that is sufficient to discriminate between particles. Additionally, spatial features of individual events can be used for particle discrimination. An important iQID imaging application that has recently been developed is real-time, single-particle digital autoradiography. We present the latest results and discuss potential applications.

Solar heating of GaAs nanowire solar cells.

Science.gov (United States)

Wu, Shao-Hua; Povinelli, Michelle L

2015-11-30

We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

Radiation monitoring and beam dump system of the OPAL silicon microvertex detector

CERN Document Server

Braibant, S

1997-01-01

The OPAL microvertex silicon detector radiation monitoring and beam dump system is described. This system was designed and implemented in order to measure the radiation dose received at every beam crossing and to induce a fast beam dump if the radiation dose exceeds a given threshold.

Study on the energy dependence of gamma radiation detectors for 137Cs and 60Co

International Nuclear Information System (INIS)

Nonato, Fernanda B.C.; Diniz, Raphael E.; Carvalho, Valdir S.; Vivolo, Vitor; Caldas, Linda V.E.

2009-01-01

38 Geiger-Mueller radiation detectors and 9 ionization chambers were calibrated, viewing to study the energy dependence of the monitor response for gamma radiation fields ( 137 Cs and 60 Co). The results were considered satisfactory only for ionization chambers and for some Geiger-Mueller detectors

Experiences with radiation portal detectors for international rail transport

Science.gov (United States)

Stromswold, D. C.; McCormick, K.; Todd, L.; Ashbaker, E. D.; Evans, J. C.

2006-08-01

Radiation detectors monitored trains at two international borders to evaluate the performance of NaI(Tl) and plastic (polyvinyltoluene: PVT) gamma-ray detectors to characterize rail cargo. The detectors included a prototype NaI(Tl) radiation-portal-monitor panel having four large detectors (10-cm × 10-cm × 41-cm) and a PVT panel with a 41 cm × 173 cm × 3.8-cm detector. Spectral data from the NaI(Tl) and PVT detectors were recorded. Of particular emphasis was the identification of naturally occurring radioactive material (NORM) and the resultant frequency of nuisance alarms. For rail monitoring, the difficulty in stopping trains to perform secondary inspection on alarming cars creates a need for reliable identification of NORM during initial screening. Approximately 30 trains were monitored, and the commodities in individual railcars were ascertained from manifest information. At one test site, the trains carried inter-modal containers that had been unloaded from ships, and at the other site, the trains contained bulk cargo in tanker cars and hopper cars or individual items in boxcars or flatbeds. NORM encountered included potash, liquefied petroleum gas, fireworks, televisions, and clay-based products (e.g., pottery). Analysis of the spectral data included the use of the template-fitting portion of the program GADRAS developed at Sandia National Laboratories. For most of the NORM, the NaI(Tl) data produced a correct identification of the radionuclides present in the railcars. The same analysis was also used for PVT data in which the spectral information (no peaks but only gradual spectral changes including Compton edges) was limited. However, the PVT analysis provided correct identification of 40K and 226Ra in many cases.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-05-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-03-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Study of a transition radiation detector for the DO experiment at FNAL

International Nuclear Information System (INIS)

Feinstein, F.

1988-06-01

The DZero experiment will study proton-antiproton collisions at 1.8 TeV in the center of mass produced at Fermi National Accelerator Laboratory (USA). The main features of the detector are an excellent hermetical calorimeter and a very good identification of muons and electrons. The Transition Radiation Detector contributes to electron/jet discrimination. Transition radiation is emitted when a charge particle crosses the interface between two media of different refraction indices. A N foils radiator produces about N/137 soft X rays when the Lorentz factor gamma of the particle is greater than a threshold of the order of 1000. The radiated energy saturates when gamma goes to infinity. These properties allow to separate electrons from pions until 140 GeV. This study presents the results of a test on a 5 GeV electron and pion beam of a prototype of chamber and of three radiators made of lithium foils, polypropylene foils, and polyethylene fibers. The detector response to pions and electrons is compared to theoretical predictions. Different statistical methods of electron/pion separation are compared on the experimental data. A method has been performed using likelihood functions which obtains a pion rejection greater than 50 for an electron efficiency of 90%. The performances are compared to those of other TRDs [fr

The ALICE Transition Radiation Detector: Construction, operation, and performance

Science.gov (United States)

Alice Collaboration

2018-02-01

The Transition Radiation Detector (TRD) was designed and built to enhance the capabilities of the ALICE detector at the Large Hadron Collider (LHC). While aimed at providing electron identification and triggering, the TRD also contributes significantly to the track reconstruction and calibration in the central barrel of ALICE. In this paper the design, construction, operation, and performance of this detector are discussed. A pion rejection factor of up to 410 is achieved at a momentum of 1 GeV/ c in p-Pb collisions and the resolution at high transverse momentum improves by about 40% when including the TRD information in track reconstruction. The triggering capability is demonstrated both for jet, light nuclei, and electron selection.

Germanium junction detectors. Theoretical and practical factors governing their use in radiation spectrometry

International Nuclear Information System (INIS)

Hors, M.; Philis, C.

1967-01-01

Semi-conductor detectors have recently greatly increased the possibilities available to nuclear spectroscopists for the study of α, β and γ radiations. Their use in radio-chemistry has encouraged us to study their principle, their mechanism and also the conditions under which they can be used. The first part, which is theoretical, consists of a summary of what should be known concerning the best use of junction detectors, in particular Ge (Li) detectors. The second part, which is experimental, summarizes the laboratory work carried out over a period of one year on Ge (Li) detectors. Stress is laid on the possibilities presented by the use of these detectors as photo-electric spectrometers, and also on the precautions required. Amongst the numerous results presented, the resolution of 2.52 keV obtained for the γ radiation of 145.5 keV for 141 Ce may be particularly noted. (authors) [fr

Simple classical model for Fano statistics in radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Jordan, David V. [Pacific Northwest National Laboratory, National Security Division - Radiological and Chemical Sciences Group PO Box 999, Richland, WA 99352 (United States)], E-mail: David.Jordan@pnl.gov; Renholds, Andrea S.; Jaffe, John E.; Anderson, Kevin K.; Rene Corrales, L.; Peurrung, Anthony J. [Pacific Northwest National Laboratory, National Security Division - Radiological and Chemical Sciences Group PO Box 999, Richland, WA 99352 (United States)

2008-02-01

A simple classical model that captures the essential statistics of energy partitioning processes involved in the creation of information carriers (ICs) in radiation detectors is presented. The model pictures IC formation from a fixed amount of deposited energy in terms of the statistically analogous process of successively sampling water from a large, finite-volume container ('bathtub') with a small dipping implement ('shot or whiskey glass'). The model exhibits sub-Poisson variance in the distribution of the number of ICs generated (the 'Fano effect'). Elementary statistical analysis of the model clarifies the role of energy conservation in producing the Fano effect and yields Fano's prescription for computing the relative variance of the IC number distribution in terms of the mean and variance of the underlying, single-IC energy distribution. The partitioning model is applied to the development of the impact ionization cascade in semiconductor radiation detectors. It is shown that, in tandem with simple assumptions regarding the distribution of energies required to create an (electron, hole) pair, the model yields an energy-independent Fano factor of 0.083, in accord with the lower end of the range of literature values reported for silicon and high-purity germanium. The utility of this simple picture as a diagnostic tool for guiding or constraining more detailed, 'microscopic' physical models of detector material response to ionizing radiation is discussed.

Radiation hardness of silicon detectors manufactured on wafers from various sources

International Nuclear Information System (INIS)

Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

1997-01-01

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

Semiconductor pixel detectors for digital mammography

International Nuclear Information System (INIS)

Novelli, M.; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S.

2003-01-01

We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown

Semiconductor pixel detectors for digital mammography

Energy Technology Data Exchange (ETDEWEB)

Novelli, M. E-mail: marzia.novelli@pi.infn.it; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S

2003-08-21

We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown.

Double gated-integrator for shaping nuclear radiation detector signals

International Nuclear Information System (INIS)

Gal, J.

2001-01-01

A new shaper, the double gated-integrator, for shaping nuclear radiation detector signals is investigated both theoretically and experimentally. The double gated-integrator consists of a pre-filter and two cascaded gated integrators. Two kinds of pre-filters were considered: a rectangular one and an exponential one. The results of the theoretical calculation show that the best figure of demerit for the double gated-integrator with exponential pre-filter is 1.016. This means that its noise to signal ratio is only 1.6% worse than that it is for infinite cusp shaping. The practical realization of the exponential pre-filter and that of the double gated integrator, both in analogue and in digital way, is very simple. Therefore, the double gated-integrator with exponential pre-filter could be a promising solution for shaping nuclear radiation detector signals

LET spectrometry with track etch detectors-Use in high-energy radiation fields

International Nuclear Information System (INIS)

Jadrnickova, I.; Spurny, F.

2008-01-01

For assessing the risk from ionizing radiation it is necessary to know not only the absorbed dose but also the quality of the radiation; radiation quality is connected with the physical quantity linear energy transfer (LET). One of the methods of determination of LET is based on chemically etched track detectors. This contribution concerns with a spectrometer of LET based on the track detectors and discusses some results obtained at: ·high-energy radiation reference field created at the SPS accelerator at CERN; and ·onboard of International Space Station where track-etch based LET spectrometer has been exposed 273 days during 'Matrjoshka - R' experiment. Results obtained are compared with the results of studies at some lower-energy neutron sources; some conclusions on the registrability of neutrons and the ability of this spectrometer to determine dose equivalent in high-energy radiation fields are formulated

Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs