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Sample records for gaas p-hemt passivation

  1. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  2. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  3. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hung, Chun-Tse; Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lai, Ying-Nan

    2012-01-01

    Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300–450 K are also studied. (paper)

  4. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

    International Nuclear Information System (INIS)

    Wu Chia-Song; Chang Chien-Huang; Liu Hsing-Chung; Lin Tah-Yeong; Wu Hsien-Ming

    2010-01-01

    This investigation explores a low-noise amplifier (LNA) with a coplanar waveguide (CPW) structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology in a Ka-band (26.5-40.0 GHz) microwave monolithic integrated circuit (MMIC). The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a V ds of 2 V and a V gs of -0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications. (semiconductor integrated circuits)

  5. Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

    International Nuclear Information System (INIS)

    Rekaya, S.; Sfaxi, L.; Bouzaiene, L.; Maaref, H.; Bru-Chevallier, C.

    2008-01-01

    The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al 0.33 Ga 0.7 As/In 0.1 Ga 0.9 As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phenomena, material properties and device applications. The photoluminescence (PL) spectra of the structures have been measured at low temperature. The dominant emission in the PL spectra is due to the recombination from the first electron (e1) subband to the first heavy-hole (hh1) subband (E 11 : e1-hh1). This feature (E 11 ) is a relatively broad peak and has a typical asymmetric line shape. The transformation of the PL spectra in the close vicinity of the Fermi edge (E F ) under different excitation densities gives strong evidence for the Fermi Edge Singularity (FES) existence. The density of the quasi-two-dimensional electron gas (2DEG) determined by PL study (n s PL ), is in sufficient agreement with the values found from Hall measurements n s Hall at 77 K. The results prove an increase of the electron density in sample grown on GaAs (111)A and (311)A rather than in equivalent sample grown on (001) GaAs substrate. This effect is in good agreement with our theoretical prediction, which is based on a self-consistent solution of the coupled Schroedinger and Poisson equations

  6. Surface passivation of liquid phase epitaxial GaAs

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.; Mo, L.; Edmondson, M.

    1995-10-01

    Passivation of the liquid phase epitaxial GaAs surface was attempted using aqueous P 2 S 5 -NH 4 OH, (NH 4 ) 2 S x and plasma nitrogenation and hydrogenation. Results indicate that plasma nitrogenation with pretreatment of plasma hydrogenation produced consistent reduction in reverse leakage current at room temperature for all p and n type Schottky diodes. Some diodes showed an order of magnitude improvement in current density. (NH 4 ) 2 S x passivation also results in improved I-V characteristics, though the long term stability of this passivation is questionable. 26 refs., 6 figs

  7. An improved large signal model of InP HEMTs

    Science.gov (United States)

    Li, Tianhao; Li, Wenjun; Liu, Jun

    2018-05-01

    An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

  8. Sulfidic photochemical passivation of GaAs surfaces in alcoholic solutions

    International Nuclear Information System (INIS)

    Simonsmeier, T.; Ivankov, A.; Bauhofer, W.

    2005-01-01

    We report on a remarkable enhancement of the passivation effect of sulfidic solutions through illumination with above band gap light. Luminescence measurements on GaAs surfaces which have been illuminated during chemical passivation reveal in comparison to nonilluminated samples a further reduction of their surface density of states as well as a significantly increased stability of the passivation. Investigations with photoelectron spectroscopy show that illumination leads to a nearly complete removal of oxides on the surface. Measurements on Schottky diodes which have been manufactured with photochemically passivated GaAs indicate a noticeable decrease in band bending and a depinning of the Fermi level

  9. Nitride surface passivation of GaAs nanowires: impact on surface state density.

    Science.gov (United States)

    Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

    2015-01-14

    Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

  10. Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface

    International Nuclear Information System (INIS)

    Wu, Xiaojun; Xu, Xinlong; Lu, Xinchao; Wang, Li

    2013-01-01

    Terahertz (THz) emission from octadecanthiol (ODT) passivated (1 0 0) surface of the semi-insulating GaAs was measured, and compared with those from the native oxidized and the fresh surfaces. It was shown that the self-assembled ODT monolayer can stabilize the GaAs (1 0 0) surface, and maintain a THz surface emission 1.4 times as efficient as the native oxidized surface under equal conditions. Surface passivation can reduce the built-in electric field in the depletion region of the GaAs (1 0 0), resulting in the suppression of the THz radiation to a different extent. Oxidation of GaAs surface reduces the THz amplitude mainly in the low-frequency region. These results indicate that GaAs can be made a more effective THz source by choosing molecular passivation technique. Conversely, the THz emission features such as polarity, amplitude, and phase from molecule-passivated surfaces may be used to characterize the attached molecules.

  11. Effects of surface passivation on twin-free GaAs nanosheets.

    Science.gov (United States)

    Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

    2015-02-24

    Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

  12. A new structure for comparing surface passivation materials of GaAs solar cells

    Science.gov (United States)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  13. Passively model-locked Nd: YAG laser with a component GaAs

    International Nuclear Information System (INIS)

    Zhang Zhuhong; Qian Liejia; Chen Shaohe; Fan Dianyuan; Mao Hongwei

    1992-01-01

    An all solid-state passively mode-locked Nd: YAG laser with a 400 μm, (100) oriented GaAs component is reported for the first time and model locked pulses with a duration of 16 ps, average energy of 10 μJ were obtained with a probability of 90%

  14. Sulfur passivation and contact methods for GaAs nanowire solar cells

    International Nuclear Information System (INIS)

    Tajik, N; Peng, Z; Kuyanov, P; LaPierre, R R

    2011-01-01

    The effect of sulfur passivation on core-shell p-n junction GaAs nanowire (NW) solar cells has been investigated. Devices of two types were investigated, consisting of indium tin oxide contact dots or opaque Au finger electrodes. Lateral carrier transport from the NWs to the contact fingers was achieved via a p-doped GaAs surface conduction layer. NWs between the opaque contact fingers had sidewall surfaces exposed for passivation by sulfur. The relative cell efficiency increased by 19% upon passivation. The contribution of the thin film grown between the NWs to the total cell efficiency was estimated by removing the NWs using a sonication procedure. Mechanisms of carrier transport and photovoltaic effects are discussed on the basis of spatially resolved laser scanning measurements.

  15. Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

    International Nuclear Information System (INIS)

    Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

    2012-01-01

    Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

  16. Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

    2012-04-01

    Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

  17. Hydrogenation of GaAs covered by GaAlAs and subgrain boundary passivation

    Science.gov (United States)

    Djemel, A.; Castaing, J.; Chevallier, J.; Henoc, P.

    1992-12-01

    Cathodoluminescence (CL) has been performed to study the influence of hydrogen on electronic properties of GaAs with and without a GaAlAs layer. Recombination at sub-boundaries has been examined. These extended defects have been introduced by high temperature plastic deformation. The results show that they are passivated by hydrogen. The penetration of hydrogen is slowed down by the GaAlAs layer. La cathodoluminescence (CL) a été utilisée pour étudier l'influence de l'hydrogène sur les propriétés électroniques de GaAs nu et recouvert d'une couche de GaAlAs. Le caractère recombinant des sous-joints de grains a été examiné. Ces défauts étendus ont été introduits par déformation plastique à chaud. Les résultats montrent que l'hydrogène passive ces défauts. La pénétration de l'hydrogène à l'intérieur de GaAs est retardée par la présence de la couche de GaAlAs.

  18. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Science.gov (United States)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  19. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  20. Electrical and optical characterization of surface passivation in GaAs nanowires.

    Science.gov (United States)

    Chang, Chia-Chi; Chi, Chun-Yung; Yao, Maoqing; Huang, Ningfeng; Chen, Chun-Chung; Theiss, Jesse; Bushmaker, Adam W; Lalumondiere, Stephen; Yeh, Ting-Wei; Povinelli, Michelle L; Zhou, Chongwu; Dapkus, P Daniel; Cronin, Stephen B

    2012-09-12

    We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the Al(x)Ga(1-x)As passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 × 10(3) to 1.1 × 10(4) cm·s(-1), and the minority carrier mobility μ is estimated to lie in the range from 10.3 to 67.5 cm(2) V(-1) s(-1) for the passivated nanowires.

  1. Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, N. T., E-mail: Bagraev@mail.ioffe.ru [Ioffe Institute (Russian Federation); Chaikina, E. I. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Division de Fisica Aplicada (Mexico); Danilovskii, E. Yu.; Gets, D. S.; Klyachkin, L. E.; L’vova, T. V.; Malyarenko, A. M. [Ioffe Institute (Russian Federation)

    2016-04-15

    The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room temperature. The I–V characteristics of the SI GaAs device reveal nonlinear behavior that appears to be evidence of the Coulomb blockade process as well as the Coulomb oscillations. The sulfur passivation of the SI GaAs device surface results in enormous transformation of the I–V characteristics that demonstrate the strong increase of the resistance and Coulomb blockade regime is replaced by the electron tunneling processes. The results obtained are analyzed within frameworks of disordering SI GaAs surface that is caused by inhomogeneous distribution of the donor and acceptor anti-site defects which affects the conditions of quantum- mechanical tunneling. Weak localization processes caused by the preservation of the Fermi level pinning are demonstrated by measuring the negative magnetoresistance in weak magnetic fields at room temperature. Finally, the studies of the magnetoresistance at higher magnetic fields reveal the h/2e Aharonov–Altshuler–Spivak oscillations with the complicated behavior due to possible statistical mismatch of the interference paths in the presence of different microdefects.

  2. Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

    Science.gov (United States)

    Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

    1993-01-01

    We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

  3. Selenium passivation of GaAs(001): a combined experimental and theoretical study

    International Nuclear Information System (INIS)

    Gonzalez, C; Benito, I; Ortega, J; Jurczyszyn, L; Blanco, J M; Perez, R; Flores, F; Kampen, T U; Zahn, D R T; Braun, W

    2004-01-01

    The chemical and electronic properties of selenium passivated GaAs(001)-2 x 1 surfaces were investigated by a combination of theoretical calculations and core level photoemission experiments. An anion exchange results in gallium-selenide like layers showing a 2 x 1 reconstruction in low energy electron diffraction (LEED). The analysis of the different components in the core level spectra of As 3d, Ga 3d and Se 3d limits the number of possible structural models. The Se/GaAs(001)-2 x 1 reconstruction has been also analysed by means of DFT-LDA calculations and theoretical STM currents. In a first step, different geometries are considered and the most stable one, from the point of view of the thermodynamic potential, is determined. Then, STM currents and the corresponding surface corrugation are calculated and compared with the experimental evidence. We conclude that the Se/GaAs(001)-2 x 1 reconstruction has a single Se atom in the last crystal layer, bonded to two Ga atoms of the second layer, and another Se layer replacing the third As layer of the crystal. These surfaces may be considered as chemically stable because they withstand considerable exposure to air. In terms of electronic passivation, i.e. the removal of any surface band bending, the selenium modification is not successful. Band bending on n-type doped samples is reduced while band bending on the p-type doped samples is further increased

  4. Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

    International Nuclear Information System (INIS)

    Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

    2005-01-01

    Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of W and d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties

  5. Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, Carol I.H.; Baca, Albert G.; Chang, P.-C; Hafich, M.J.; Hammons, B.E.; Zavadil, Kevin R.

    1999-08-09

    A new air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiO{sub x}N{sub y} dielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.

  6. GaAs nanopillar-array solar cells employing in situ surface passivation

    Science.gov (United States)

    Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong; Huffaker, Diana L.

    2013-01-01

    Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p–n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm−2 and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode. PMID:23422665

  7. A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs

    Science.gov (United States)

    2015-07-01

    A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs Andong Huang1, 2, ZhengZhong2, 3, and Yongxin Guo2, 3...Suzhou Research Institute, Suzhou, China Abstract — A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs is...parameter error function. The extrinsic elements are optimized at multi-bias points and the intrinsic ones at specific bias points. Only broad ranges

  8. Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

    International Nuclear Information System (INIS)

    Palma, John; Mil'shtein, Samson

    2014-01-01

    Off-state breakdown voltage, V br , is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V br . This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V br on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V br upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown voltages

  9. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    International Nuclear Information System (INIS)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  10. Analysis of surface dark current dependent upon surface passivation in APD based on GaAs

    International Nuclear Information System (INIS)

    Song, Hong Joo; Roh, Cheong Hyun; Lee, Jun Ho; Choi, Hong Goo; Hahn, Cheol-Koo; Kim, Dong Ho; Park, Jung Ho

    2009-01-01

    In this paper, we investigated the dependence of reverse dark current on two types of surface passivation, one of which is polyimide and the other is SiN x , for InAs quantum dots/GaAs separate absorption, charge, multiplication avalanche photodiode (SACM APD). From the experimental results, we found that dark current was dominated by surface current, and not bulk current. It was also noted that SiN x passivation has a surface current that is lower by three to nine times in magnitude than that in polyimide passivation in the whole range of bias. To analyze the difference in dark current due to the passivation types, we propose the theoretical current components. This shows that the dark current of both passivation types is mainly composed of generation–recombination (G–R) and tunneling components, originating from the surface. However, each component has a different magnitude for passivation types, which can be explained by carrier concentration and trap density. The dependence of dark current on temperature shows the different behaviors between passivation types and supports a theoretical description of current components

  11. Surface barrier analysis of semi-insulating and n{sup +}-type GaAs(0 0 1) following passivation with n-alkanethiol SAMs

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, Gregory M. [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada); Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Bensebaa, Farid [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Dubowski, Jan J., E-mail: jan.j.dubowski@usherbrooke.ca [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada)

    2011-02-15

    The surface Fermi level of semi-insulating and n{sup +}-type GaAs(0 0 1) was determined before and after passivation with n-alkanethiol self-assembled monolayers (SAMs) by X-ray photoelectron spectroscopy. Fermi level positioning was achieved using Au calibration pads integrated directly onto the GaAs surface, prior to SAM deposition, in order to provide a surface equipotential binding energy reference. Fermi level pinning within 50 meV and surface barrier characteristics according to the Advanced Unified Defect Model were observed. Our results demonstrate the effectiveness of the Au integration technique for the determination of band-edge referenced Fermi level positions and are relevant to an understanding of emerging technologies based on the molecular-semiconductor junction.

  12. The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices.

    Science.gov (United States)

    Carrad, D J; Burke, A M; Reece, P J; Lyttleton, R W; Waddington, D E J; Rai, A; Reuter, D; Wieck, A D; Micolich, A P

    2013-08-14

    We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH4)2Sx treatment gives a 40-60 ×  increase in photoluminescence intensity for the (100) surface, an increase of only 2-3 ×  is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.

  13. The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

    International Nuclear Information System (INIS)

    Carrad, D J; Burke, A M; Reece, P J; Lyttleton, R W; Waddington, D E J; Micolich, A P; Rai, A; Reuter, D; Wieck, A D

    2013-01-01

    We have studied the efficacy of (NH 4 ) 2 S x surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH 4 ) 2 S x solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH 4 ) 2 S x treatment gives a 40–60 × increase in photoluminescence intensity for the (100) surface, an increase of only 2–3 × is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface. (paper)

  14. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy; Um sistema de modulos NIM conjugados com entrada opcional por amplificador pHEMT para espectroscopia beta e gama

    Energy Technology Data Exchange (ETDEWEB)

    Konrad, Barbara; Lüdke, Everton, E-mail: barbarakonradmev@gmail.com, E-mail: eludke@smail.ufsm.br [Universidade Federal de Santa Maria (LAE/UFSM), RS (Brazil). Lab. de Astrofisica e Eletronica

    2014-07-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles.

  15. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy

    International Nuclear Information System (INIS)

    Konrad, Barbara; Lüdke, Everton

    2014-01-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles

  16. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    Directory of Open Access Journals (Sweden)

    Takeshi Aoki

    2015-08-01

    Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  17. ECV profiling of GaAs and GaN HEMT heterostructures

    Science.gov (United States)

    Yakovlev, G.; Zubkov, V.

    2018-03-01

    AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

  18. Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.

    Science.gov (United States)

    Yang, Zai-Xing; Yin, Yanxue; Sun, Jiamin; Bian, Luozhen; Han, Ning; Zhou, Ziyao; Shu, Lei; Wang, Fengyun; Chen, Yunfa; Song, Aimin; Ho, Johnny C

    2018-05-02

    Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of ~30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.

  19. Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

    DEFF Research Database (Denmark)

    Boulanger, J. P.; Chia, A. C. E.; Wood, B.

    2016-01-01

    A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-...

  20. Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Oh, Jung-Hun; Sul, Woo-Suk; Han, Hyo-Jong; Jang, Hae-Kang; Son, Myung-Sik; Rhee, Jin-Koo; Kim, Sam- Dong

    2004-01-01

    We examine the effects of surface state formation due to silicon-nitride passivation on the electrical characteristics of GaAs-based 0.1-μm pseudomorphic high-electron-mobility transistors (pHEMTs). In this study, DC and noise characteristic are investigated before and after the passivation of the pHEMTs. After the passivation, we observe significant degradation of noise performance in the frequency range of 55 - 62 GHz. We also observe clear increases in the drain-source saturation current at a gate voltage of 0 V and in the extrinsic transconductance at a drain voltage of 1 V from 325 and 264 to 365 mA/mm and 304 mS/mm, respectively, with no significant variation in pinchoff voltage. We propose that the observed variations in the DC and the noise characteristics are due to the positively charged surface state after deposition of the silicon nitride passivation film. Hydrodynamic device model simulations were performed based upon the proposed mechanisms for the change in electrical behavior, and the calculated results show good agreement with the experimental results.

  1. Surface passivation technology for III-V semiconductor nanoelectronics

    International Nuclear Information System (INIS)

    Hasegawa, Hideki; Akazawa, Masamichi

    2008-01-01

    The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

  2. The influence of γ-irradiation cobalt 60 on electrical properties of undoped GaAs treated with hydrogen plasma

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Bumaj, Yu.A.; Ul'yashin, A.G.

    1999-01-01

    The influence of exposition to a hydrogen plasma (hydrogenation) on the electrical properties alteration under gamma-irradiation in bulk GaAs have been investigated. It is shown that crystals hydrogenation before irradiation leads to particularly passivation of electrically active defects that are responsible for carriers scattering and removing processes in irradiated crystals. Radiation defects thermostability in hydrogenated GaAs crystals is lower than that in non hydrogenated ones. The energetic levels position of main defect that effects on electrical properties alteration after irradiation in GaAs crystals was detected. It is equal to E D =E C -0,125±0,0005 eV

  3. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    Science.gov (United States)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  4. Lithium compensation of GaAs

    International Nuclear Information System (INIS)

    Alexiev, D.; Tavendale, A.J.

    1988-08-01

    Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments, the effect of Li diffusion on existing trap spectra, defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature, initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made

  5. Passive safety; Passive Sicherheit

    Energy Technology Data Exchange (ETDEWEB)

    Rueckert, J. [Skoda Auto a.s., Mlada Boleslav (Czech Republic). Interieurentwicklung und Versuche; Hau, M. [Skoda Auto a.s., Mlada Boleslav (Czech Republic). Koordination der Fahrzeugsicherung

    2004-05-01

    The specifications for passive safety are partly based on the legal requirements for all export markets combined with the strict internal standards of Volkswagen Group. The Euro NCAP tests and their precisely defined testing methods using the new point assessment are very important. (orig.)

  6. Solvent-mediated self-assembly of hexadecanethiol on GaAs (0 0 1)

    International Nuclear Information System (INIS)

    Huang, Xiaohuan; Dubowski, Jan J.

    2014-01-01

    Graphical abstract: - Highlights: • Outstanding quality hexadecanethiol self-assembled monolayers (HDT SAM) produced on GaAs (0 0 1) due to the mediated role of water in an alcoholic environment. • HDT SAM formed in chloroform exhibit excellent electronic passivation properties in contrast to their structural characteristics. • Low dielectric constant solvents do not necessary provide conditions advantageous for the formation of high quality alkanethiol SAM. • Photoluminescence emitting materials allow to investigate the mechanisms of both electronic and chemical passivation and, thus, they are an excellent platform for studying the mechanisms of SAM formation on solid substrates. - Abstract: We have investigated the influence of solvents on the quality of hexadecanethiol (HDT) self-assembled monolayers (SAM) formed on GaAs (0 0 1) in chloroform, ethanol and ethanol/water 1:1 characterized by their increasing dielectric constants from 4.8 (chloroform) to 24.5 (ethanol) and water (80.1). Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) data show that the incubation in ethanol/water 1:1 solution creates conditions favouring inter-molecular interaction leading to the formation of an outstanding quality HDT SAM on GaAs (0 0 1). Incubation in low-dielectric constant solvents is not offering advantageous conditions for growing HDT SAM on GaAs. The chloroform environment, while weakening the thiol–thiol interaction, induces the oxidation of the GaAs surface and, in particular, formation of Ga 2 O 3 . This reduces the concentration of surface defects responsible for non-radiative recombination and leads to an enhanced photoluminescence emission, despite the fact that HDT SAM formed in chloroform are highly disordered, exhibiting the worst chemical passivation among the investigated samples

  7. Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates

    International Nuclear Information System (INIS)

    Rekaya, S.; Sfaxi, L.; Bru-Chevallier, C.; Maaref, H.

    2011-01-01

    InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT) structures were grown by Molecular Beam Epitaxy (MBE) on (3 1 1)A GaAs substrates with different well widths, and studied by photoluminescence (PL) spectroscopy as a function of temperature and excitation density. The PL spectra are dominated by one or two spectral bands, corresponding, respectively, to one or two populated electron sub-bands in the InGaAs quantum well. An enhancement of PL intensity at the Fermi level energy (E F ) in the high-energy tail of the PL peak is clearly observed and associated with the Fermi edge singularity (FES). This is practically detected at the same energy for all samples, in contrast with energy transitions in the InGaAs channel, which are shifted to lower energy with increasing channel thickness. PL spectra at low temperature and low excitation density are used to optically determine the density of the two-dimensional electron gas (2DEG) in the InGaAs channel for different thicknesses. The results show an enhancement of the 2DEG density when the well width increases, in good agreement with our previous theoretical study.

  8. Passive Education

    Science.gov (United States)

    Bojesen, Emile

    2018-01-01

    This paper does not present an advocacy of a passive education as opposed to an active education nor does it propose that passive education is in any way 'better' or more important than active education. Through readings of Maurice Blanchot, Jacques Derrida and B.S. Johnson, and gentle critiques of Jacques Rancière and John Dewey, passive…

  9. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

    Energy Technology Data Exchange (ETDEWEB)

    Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O' Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

    2013-12-16

    We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

  10. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

    International Nuclear Information System (INIS)

    Seyedi, M. A.; Yao, M.; O'Brien, J.; Dapkus, P. D.; Wang, S. Y.

    2013-01-01

    We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields 2 , which shows a strong possibility for high-speed applications with a broad area device

  11. Doping assessment in GaAs nanowires

    DEFF Research Database (Denmark)

    Goktas, N. Isik; Fiordaliso, Elisabetta Maria; LaPierre, R. R.

    2018-01-01

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs...

  12. GaAs optoelectronic neuron arrays

    Science.gov (United States)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  13. Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Lamagna, Luca; Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy); Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milano (Italy); Brammertz, Guy; Meuris, Marc [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)

    2010-01-01

    Capping III-V compound surfaces with Ge ultra-thin layer might be a viable pathway to passivate the electrically active interface traps which usually jeopardize the integration of III-V materials in metal-oxide-semiconductor devices. As the physical nature of such traps is intrinsically related to the chemical details of the interface composition, the structural and compositional features of the Ge/GaAs interface were thoroughly investigated in two different configurations, the atomic layer deposition of La-doped ZrO{sub 2} films on Ge-capped GaAs and the ultra-high vacuum based molecular beam deposition of GeO{sub 2}/Ge double stack on in situ prepared GaAs. In the former case, the intercalation of a Ge interface layer is shown to suppress the concentration of interface Ga-O, As-O and elemental As bonding which were significantly detected in case of the direct oxide deposition on GaAs. In the latter case, the incidence of two different in situ surface preparations, the Ar sputtering and the atomic H cleaning, on the interface composition is elucidated and the beneficial role played by the atomic H exposure in reducing the semiconductor-oxygen bonds at the interface level is demonstrated.

  14. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  15. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  16. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1990-01-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

  17. Subnanosecond photoconductive switching in GaAs

    Science.gov (United States)

    Druce, R. L.; Pocha, M. D.; Griffin, K. L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

  18. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

    Science.gov (United States)

    Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

    2018-04-01

    Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

  19. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Veer Dhaka

    2016-01-01

    Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  20. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  1. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

    Science.gov (United States)

    Geydt, P.; Alekseev, P. A.; Dunaevskiy, M.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

    2015-12-01

    In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

  2. Panel fabrication utilizing GaAs solar cells

    Science.gov (United States)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  3. Optical pumping of hot phonons in GaAs

    International Nuclear Information System (INIS)

    Collins, C.L.; Yu, P.Y.

    1982-01-01

    Optical pumping of hot LO phonons in GaAs has been studied as a function of the excitation photon frequency. The experimental results are in good agreement with a model calculation which includes both inter- and intra-valley electron-phonon scatterings. The GAMMA-L and GAMMA-X intervalley electron-phonon interactions in GaAs have been estimated

  4. Linearity of photoconductive GaAs detectors to pulsed electrons

    International Nuclear Information System (INIS)

    Ziegler, L.H.

    1995-01-01

    The response of neutron damaged GaAs photoconductor detectors to intense, fast (50 psec fwhm) pulses of 16 MeV electrons has been measured. Detectors made from neutron damaged GaAs are known to have reduced gain, but significantly improved bandwidth. An empirical relationship between the observed signal and the incident electron fluence has been determined

  5. Peeled film GaAs solar cell development

    International Nuclear Information System (INIS)

    Wilt, D.M.; Thomas, R.D.; Bailey, S.G.; Brinker, D.J.; DeAngelo, F.L.

    1990-01-01

    Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10 6 ) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Al x Ga 1 - x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

  6. Compositional properties of passivity

    NARCIS (Netherlands)

    Kerber, Florian; van der Schaft, Arjan

    2011-01-01

    The classical passivity theorem states that the negative feedback interconnection of passive systems is again passive. The converse statement, - passivity of the interconnected system implies passivity of the subsystems -, turns out to be equally valid. This result implies that among all feasible

  7. Annealing-induced Fe oxide nanostructures on GaAs

    OpenAIRE

    Lu, Y X; Ahmad, E; Xu, Y B; Thompson, S M

    2005-01-01

    We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy...

  8. Electrode pattern design for GaAs betavoltaic batteries

    International Nuclear Information System (INIS)

    Chen Haiyang; Yin Jianhua; Li Darang

    2011-01-01

    The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied. Based on the study, an electrode pattern design principle of GaAs betavoltaic batteries is proposed. GaAs PIN junctions with and without the proposed electrode pattern are fabricated and measured under the illumination of 63 Ni. Results show that the proposed electrode can reduce the backscattering and shadowing for the beta particles from 63 Ni to increase the GaAs betavoltaic battery short circuit currents effectively but has little impact on the fill factors and ideal factors.

  9. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Nyamhere, C.; Botha, J.R.; Venter, A.

    2011-01-01

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E C -0.33 eV, E C -0.36 eV, E C -0.38 eV and E C -0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E C -0.58 eV. Isochronal annealing of the passivated material between 50 and 300 o C, revealed the emergence of a secondary defect, not previously observed, at E C -0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 o C, as all the defects originally observed in the reference sample were recovered.

  10. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Nyamhere, C., E-mail: s210239522@live.nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-05-15

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E{sub C}-0.33 eV, E{sub C}-0.36 eV, E{sub C}-0.38 eV and E{sub C}-0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E{sub C}-0.58 eV. Isochronal annealing of the passivated material between 50 and 300 {sup o}C, revealed the emergence of a secondary defect, not previously observed, at E{sub C}-0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 {sup o}C, as all the defects originally observed in the reference sample were recovered.

  11. Spin injection into GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Endres, Bernhard

    2013-11-01

    In this work spin injection into GaAs from Fe and (Ga,Mn)As was investigated. For the realization of any spintronic device the detailed knowledge about the spin lifetime, the spatial distribution of spin-polarized carriers and the influence of electric fields is essential. In the present work all these aspects have been analyzed by optical measurements of the polar magneto-optic Kerr effect (pMOKE) at the cleaved edge of the samples. Besides the attempt to observe spin pumping and thermal spin injection into n-GaAs the spin solar cell effect is demonstrated, a novel mechanism for the optical generation of spins in semiconductors with potential for future spintronic applications. Also important for spin-based devices as transistors is the presented realization of electrical spin injection into a two-dimensional electron gas.

  12. N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

    International Nuclear Information System (INIS)

    Desalvo, G.C.; Mueller, E.H.; Barnett, A.M.

    1985-01-01

    The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency

  13. Optical properties of GaAs

    International Nuclear Information System (INIS)

    Akinlami, J. O.; Ashamu, A. O.

    2013-01-01

    We have investigated the optical properties of gallium arsenide (GaAs) in the photon energy range 0.6–6.0 eV. We obtained a refractive index which has a maximum value of 5.0 at a photon energy of 3.1 eV; an extinction coefficient which has a maximum value of 4.2 at a photon energy of 5.0 eV; the dielectric constant, the real part of the complex dielectric constant has a maximum value of 24 at a photon energy of 2.8 eV and the imaginary part of the complex dielectric constant has a maximum value of 26.0 at a photon energy of 4.8 eV; the transmittance which has a maximum value of 0.22 at a photon energy of 4.0 eV; the absorption coefficient which has a maximum value of 0.22 × 10 8 m −1 at a photon energy of 4.8 eV, the reflectance which has a maximum value of 0.68 at 5.2eV; the reflection coefficient which has a maximum value of 0.82 at a photon energy of 5.2 eV; the real part of optical conductivity has a maximum value of 14.2 × 10 15 at 4.8 eV and the imaginary part of the optical conductivity has a maximum value of 6.8 × 10 15 at 5.0 eV. The values obtained for the optical properties of GaAs are in good agreement with other results. (semiconductor physics)

  14. Passive solar technology

    Energy Technology Data Exchange (ETDEWEB)

    Watson, D

    1981-04-01

    The present status of passive solar technology is summarized, including passive solar heating, cooling and daylighting. The key roles of the passive solar system designer and of innovation in the building industry are described. After definitions of passive design and a summary of passive design principles are given, performance and costs of passive solar technology are discussed. Passive energy design concepts or methods are then considered in the context of the overall process by which building decisions are made to achieve the integration of new techniques into conventional design. (LEW).

  15. Preparation of GaAs photocathodes at low temperature

    International Nuclear Information System (INIS)

    Mulhollan, G.; Clendenin, J.; Tang, H.

    1996-10-01

    The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated

  16. Comparisons of single event vulnerability of GaAs SRAMS

    Science.gov (United States)

    Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

    1986-12-01

    A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

  17. Electrodeposition of Metal on GaAs Nanowires

    Science.gov (United States)

    Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

    2010-10-01

    Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

  18. Diffusion of $^{52}$Mn in GaAs

    CERN Multimedia

    2002-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of Mn in GaAs under intrinsic conditions in a previously un-investigated temperature region. The aim of the presently proposed experiments is twofold. \\begin{itemize} \\item A quantitative study of Mn diffusion in GaAs at low Mn concentrations would be decisive in providing new information on the diffusion mechanism involved. \\item As Ga vacancies are expected to be involved in the Mn diffusion process it can be predicted that also the GaAs material growth technique most likely plays a role. To clarify this assumption diffusion experiments will be conducted for GaAs material grown by two different techniques. \\end{itemize} For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{52}$Mn$^{+}$ ion beam.

  19. Implantation annealing in GaAs by incoherent light

    International Nuclear Information System (INIS)

    Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

    1983-01-01

    Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

  20. Subnanosecond linear GaAs photoconductive switching: Revision 1

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.; Hofer, W.W.

    1989-01-01

    We are conducting research in photoconductive switching for the purpose of generating subnanosecond pulses in the 25--50kV range. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is /approximately/10/sup /minus/14/ sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. We have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm. The illumination source was a Nd:YAG laser operating at 1.06 /mu/m. 4 refs., 11 figs.

  1. Subnanosecond linear GaAs photoconductive switching, revision 1

    Science.gov (United States)

    Druce, R. L.; Pocha, M. D.; Griffin, K. L.; Hofer, W. W.

    Research was conducted in photoconductive switching for the purpose of generating subnanosecond pulses in the 25 to 50kV range. The very fast recombination rates of Gallium Arsenide (GaAs) was exploited to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is (approx. 10(-14) sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. Switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm was observed. The illumination source was a Nd:YAG laser operating at 1.06 microns.

  2. Design optimization of GaAs betavoltaic batteries

    International Nuclear Information System (INIS)

    Chen Haiyanag; Jiang Lan; Chen Xuyuan

    2011-01-01

    GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm -2 63 Ni, the open circuit voltage of the optimized batteries is about ∼0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P + PN + junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm -2 , which indicates a carrier diffusion length of less than 1 μm. The overall results show that multi-layer P + PN + junctions are the preferred structures for GaAs betavoltaic battery design.

  3. Fundamental studies of passivity and passivity breakdown

    International Nuclear Information System (INIS)

    Macdonald, D.D.; Urquidi-Macdonald, M.; Song, H.; Biaggio-Rocha, S.; Searson, P.

    1991-11-01

    This report summarizes the findings of our fundamental research program on passivity and passivity breakdown. During the past three and one half years in this program (including the three year incrementally-funded grant prior to the present grant), we developed and experimentally tested various physical models for the growth and breakdown of passive films on metal surfaces. These models belong to a general class termed ''point defects models'' (PDMs), in which the growth and breakdown of passive films are described in terms of the movement of anion and cation vacancies

  4. Optical and electrical characterization of n-GaAs surfaces passivated by N{sub 2}-H{sub 2} plasma

    Energy Technology Data Exchange (ETDEWEB)

    Augelli, V.; Ligonzo, T.; Minafra, A.; Schiavulli, L.; Capozzi, V. E-mail: capozzi@ba.infn.it; Perna, G.; Ambrico, M.; Losurdo, M

    2003-05-01

    The passivation of GaAs (1 0 0) surface has been performed by using remote N{sub 2}-H{sub 2} (3% in H{sub 2}) RF plasma nitridation. The samples, consisting of n-doped GaAs wafers, show photoluminescence enhancement when the nitridation time and exposure to the plasma are in a narrow temporal window, so that a very thin (about 10 A) GaN layer is deposited on the GaAs surface. Pure N{sub 2} nitridation does not provide an efficient passivation, because it results in GaN layers with As and AsN{sub x} segregation at the GaN/GaAs interface. Increase of Au-GaAs Schottky barrier with the insertion of GaN interlayer and improvement of current-voltage characteristic have been observed.

  5. Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2017-06-01

    Full Text Available This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2, indium tin oxide (ITO, and a hybrid layer of SiO2/ITO applied using Radio frequency (RF sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52% exceeded that of cells with a SiO2 antireflective coating (21.92%. Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating.

  6. 3-D GaAs radiation detectors

    International Nuclear Information System (INIS)

    Meikle, A.R.; Bates, R.L.; Ledingham, K.; Marsh, J.H.; Mathieson, K.; O'Shea, V.; Smith, K.M.

    2002-01-01

    A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 μm and a pitch of 210 μm. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulations of a nine-electrode cell with 10 μm electrodes with a 25 μm pitch were also performed. The I-V characteristics again showed a high breakdown voltage with a low leakage current but also showed a full depletion voltage of just 8 V

  7. Spectroscopy of GaAs quantum wells

    International Nuclear Information System (INIS)

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs

  8. Spectroscopy of GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

  9. Immunizations: Active vs. Passive

    Science.gov (United States)

    ... Issues Health Issues Health Issues Conditions Injuries & Emergencies Vaccine Preventable Diseases ... Children > Safety & Prevention > Immunizations > Immunizations: Active vs. Passive Safety & ...

  10. Hydrogenation of passivated contacts

    Energy Technology Data Exchange (ETDEWEB)

    Nemeth, William; Yuan, Hao-Chih; LaSalvia, Vincenzo; Stradins, Pauls; Page, Matthew R.

    2018-03-06

    Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.

  11. Atomic hydrogen cleaning of GaAs photocathodes

    International Nuclear Information System (INIS)

    Poelker, M.; Price, J.; Sinclair, C.

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs

  12. 35-kV GaAs subnanosecond photoconductive switches

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L. (Lawrence Livermore National Lab., CA (United States))

    1990-12-01

    Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. The authors are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. They have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. They have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes the experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. They also describe the experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs.

  13. 35-kV GaAs subnanosecond photoconductive switches

    Science.gov (United States)

    Pocha, Michael D.; Druce, Robert L.

    1990-12-01

    High-voltage, fast-pulse generation using GaAs photoconductive switches is investigated. It is possible to to generate 35-kV pulses with risetimes as short as 135 ps using 5-mm gap switches, and electric field hold-off of greater than 100 kV/cm is achieved. An approximately 500-ps FWHM on/off electrical pulse is generated with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier lifetimes. Experimental results are described, and fabrication of switches and the diagnostics used to measure these fast signals are discussed. Experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs is also described.

  14. GaAs strip detectors: the Australian production program

    International Nuclear Information System (INIS)

    Butcher, K.S.A.; Alexiev, D.

    1995-01-01

    The Australian High Energy Physics consortium (composed of the University of Melbourne, the University of Sydney and ANSTO) has been investigating the possibility of producing a large area wheel of SI GaAs detectors for the ATLAS detector array. To help assess the extent of Australia's role in this venture a few SI GaAs microstrip detectors are to be manufactured under contract by the CSIRO division of Radiophysics GaAs IC Prototyping Facility. The planned production of the devices is discussed. First, the reasons for producing the detectors here in Australia are examined, then some basic characteristics of the material are considered, and finally details are provided of the design used for the manufacture of the devices. Two sets of detectors will be produced using the standard Glasgow production recipe; SIGaAs and GaN. The Glasgow mask set is being used as a benchmark against which to compare the Australian devices

  15. Donor level of interstitial hydrogen in GaAs

    International Nuclear Information System (INIS)

    Dobaczewski, L.; Bonde Nielsen, K.; Nylandsted Larsen, A.; Peaker, A.R.

    2006-01-01

    The first data evidencing the existence of the donor level of the interstitial hydrogen in GaAs are presented. The abundant formation of the (0/+) donor level after in situ low-temperature implantation of hydrogen into the depletion layer of GaAs Schottky diodes has been observed and the activation energy and annealing properties have been determined by Laplace DLTS. The activation energy for electron emission of this donor state is 0.14eV. Above 100K the hydrogen deep donor state is unstable, converting to a more stable form when there are electrons available for the capture process. A slightly perturbed form of the hydrogen donor in its neutral charge state can be recovered by illuminating the sample. This process releases twice as many electrons as the ionisation process of the hydrogen donor state itself. This fact, by analogy with the silicon case, evidences the negative-U behaviour of hydrogen in GaAs

  16. Microwave GaAs Integrated Circuits On Quartz Substrates

    Science.gov (United States)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  17. Status of fully integrated GaAs particle detectors

    International Nuclear Information System (INIS)

    Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

    1999-01-01

    GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

  18. Scanning microwave microscopy applied to semiconducting GaAs structures

    Science.gov (United States)

    Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

    2018-02-01

    A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

  19. Nuclear spin warm up in bulk n -GaAs

    Science.gov (United States)

    Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

    2016-08-01

    We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

  20. The GaAs electron source: simulations and experiments

    International Nuclear Information System (INIS)

    Aleksandrov, A.V.; Ciullo, G.; Guidi, V.; Kudelainen, V.I.; Lamanna, G.; Lenisa, P.; Logachov, P.V.; Maciga, B.; Novokhatsky, A.; Tecchio, L.; Yang, B.

    1994-01-01

    In this paper we calculate electron emission from GaAs photocathodes using the Monte Carlo technique. Typical data of energy spread of the electron beam are presented. For photoenergy ranging from 1.6 to 2.1 eV, the calculated longitudinal and transverse energy spreads are 14.4-78 and 4-14.7 meV respectively. Temporal measurement of GaAs photocathodes has been performed. The preliminary results show that the temporal response is faster than 200 ps. (orig.)

  1. Performance of a GaAs electron source

    International Nuclear Information System (INIS)

    Calabrese, R.; Ciullo, G.; Della Mea, G.; Egeni, G.P.; Guidi, V.; Lamanna, G.; Lenisa, P.; Maciga, B.; Rigato, V.; Rudello, V.; Tecchio, L.; Yang, B.; Zandolin, S.

    1994-01-01

    We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and constant current extraction (1 mA for more than four weeks) are achieved after a little initial decay. These parameters meet the requirements for application of the GaAs photocathode as a source for electron cooling devices. We also present the preliminary results of a surface analysis experiment, carried out by means of the RBS technique to check the hypothesis of cesium evaporation from the surface when the photocathode is in operation. (orig.)

  2. Transient radiation effects in GaAs semiconductor devices

    International Nuclear Information System (INIS)

    Chang, J.Y.; Stauber, M.; Ezzeddine, A.; Howard, J.W.; Constantine, A.G.; Becker, M.; Block, R.C.

    1988-01-01

    This paper describes an ongoing program to identify the response of GaAs devices to intense pulses of ionizing radiation. The program consists of experimental measurements at the Rensselaer Polytechnic Institute's RPI electron linear accelerator (Linac) on generic GaAs devices built by Grumman Tachonics Corporation and the analysis of these results through computer simulation with the circuit model code SPICE (including radiation effects incorporated in the variations TRISPICE and TRIGSPICE and the device model code PISCES IIB). The objective of this program is the observation of the basic response phenomena and the development of accurate simulation tools so that results of Linac irradiations tests can be understood and predicted

  3. Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates

    NARCIS (Netherlands)

    Gong, Q.; Nötzel, R.; Schönherr, H.-P.; Ploog, K.H.

    2002-01-01

    We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(311)A and GaAs(100). On GaAs(311)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along [011] is composed of monolayer high

  4. Radiation effects in pigtailed GaAs and GaA1As LEDs

    International Nuclear Information System (INIS)

    Barnes, C.E.

    1981-06-01

    Permanent and transient radiation effects have been studied in Plessey pigtailed, high radiance GaAs and GaAlAs LEDs using neutron, gamma ray and X-ray sources. The radiation-induced source of degradation in these devices was determined by also examining both bare, unpigtailed LEDs and separate samples of the Corning fibers used as pigtails. No transient effects were observed in the unpigtailed LEDs during either pulsed neutron or X-ray exposure. In contrast, the Corning doped silica fibers exhibited strong transient attenuation following pulsed X-ray bombardment. Permanent neutron damage in these pigtailed LEDs consisted essentially of light output degradation in the LED itself. Permanent gamma ray effects due to a Co-60 irradiation of 1 megarad were restricted to a small increase in attenuation in the fiber. The two primary radiation effects were then transient attenuation in the fiber pigtail and permanent neutron-induced degradation of the LED

  5. Femtosecond coherent emission from GaAs bulk microcavities

    Science.gov (United States)

    Gurioli, Massimo; Bogani, Franco; Ceccherini, Simone; Colocci, Marcello; Beltram, Fabio; Sorba, Lucia

    1999-02-01

    The emission from a λ/2 GaAs bulk microcavity resonantly excited by femtosecond pulses has been characterized by using an interferometric correlation technique. It is found that the emission is dominated by the coherent signal due to light elastically scattered by disorder, and that scattering is predominantly originated from the lower polariton branch.

  6. Superconductivity and its pressure variation in GaAs

    International Nuclear Information System (INIS)

    Nirmala Louis, C.; Jayam, Sr. Gerardin; Amalraj, A.

    2005-01-01

    The electronic band structure, metallization, phase transition and superconducting transition of gallium arsenide under pressure are studied using TB-LMTO method. Metallization occurs via indirect closing of band gap between Γ and X points. GaAs becomes superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The ground state properties are analyzed by fitting the calculated total energies to the Birch-Murnaghan's equation of state. The superconducting transition temperatures (T c ) obtained as a function of pressure for both the ZnS and NaCl structures and GaAs comes under the class of pressure induced superconductor. When pressure is increased T c increases in both the normal and high pressure structures. The dependence of T c on electron-phonon mass enhancement factor λ shows that GaAs is an electron-phonon-mediated superconductor. Also it is found that GaAs retained in their normal structure under high pressure give appreciably high T c . (author)

  7. Density-dependent electron scattering in photoexcited GaAs

    DEFF Research Database (Denmark)

    Mics, Zoltán; D'’Angio, Andrea; Jensen, Søren A.

    2013-01-01

    —In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density...

  8. Picosecond relaxation of X-ray excited GaAs

    Czech Academy of Sciences Publication Activity Database

    Tkachenko, V.; Medvedev, Nikita; Lipp, V.; Ziaja, B.

    2017-01-01

    Roč. 24, Sep (2017), s. 15-21 ISSN 1574-1818 Institutional support: RVO:68378271 Keywords : GaAS * X-ray excitation * picosecond relaxation Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 0.908, year: 2016

  9. Substrate and Mg doping effects in GaAs nanowires

    Directory of Open Access Journals (Sweden)

    Perumal Kannappan

    2017-10-01

    Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

  10. Passive magnetic bearing configurations

    Science.gov (United States)

    Post, Richard F [Walnut Creek, CA

    2011-01-25

    A journal bearing provides vertical and radial stability to a rotor of a passive magnetic bearing system when the rotor is not rotating and when it is rotating. In the passive magnetic bearing system, the rotor has a vertical axis of rotation. Without the journal bearing, the rotor is vertically and radially unstable when stationary, and is vertically stable and radially unstable when rotating.

  11. Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells

    International Nuclear Information System (INIS)

    Herndon, M. K.; Bradford, W. C.; Collins, R. T.; Hawkins, B. E.; Kuech, T. F.; Friedman, D. J.; Kurtz, S. R.

    2000-01-01

    Near-field scanning optical microscopy (NSOM) was used to study cleaved edges of GaAs solar cell devices. Using visible light for excitation, the NSOM acquired spatially resolved traces of the photocurrent response across the various layers in the device. For excitation energies well above the band gap, carrier recombination at the cleaved surface had a strong influence on the photocurrent signal. Decreasing the excitation energy, which increased the optical penetration depth, allowed the effects of surface recombination to be separated from collection by the pn junction. Using this approach, the NSOM measurements directly observed the effects of a buried minority carrier reflector/passivation layer. (c) 2000 American Institute of Physics

  12. Spin dynamics in GaAs and (110)-GaAs heterostructures; Spindynamik in GaAs und (110)-GaAs-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Oertel, Stefan

    2012-07-01

    This thesis investigates the spin dynamics in both bulk GaAs and (llO)GaAs heterostructures using time- and polarization-resolved photoluminescence spectroscopy. In bulk GaAs the spin relaxation t ime is measured for the first time in the high temperature regime from 280 K to 400 K and is compared to numerical calculations. The numerical calculations are based on the spin relaxation theory of the Dyakonov-Perel mechanism effected by momentum scattering with polar optical phonons and electron-electron scattering and are in good agreement with the experimental results. Measurements of the dependence on the electron density serve to determine the energy dependent proportional factor between the electron density and the effective electron-electron scattering time. Also in bulk GaAs the interaction between the electron spin system and the nuclear spin system is investigated. The measured electron Lande g-factor under the influence of the nuclear magnetic field is used as an indicator to monitor the temporal evolution of the nuclear magnetic field under sustained dynamic nuclear polarization. Measurements with polarization modulated excitation enable the determination of the relevant time scale at which dynamic nuclear polarization takes place. Furthermore, the temporal evolution of the measured electron Lande g-factor shows the complex interplay of the dynamic nuclear polarization, the nuclear spin diffusion and the nuclear spin relaxation. In symmetric (110)-GaAs quantum wells the dependence of the inplane anisotropy of the electron Lande g-factor on the quantum well thickness is determined experimentally. The measurements are in very good agreement with calculations based upon k . p-theory and reveal a maximum of the anisotropy at maximum carrier localization in the quantum well. The origin of the anisotropy that is not present in symmetric (001) quantum wells is qualitatively described by means of a simplified model based on fourth-order perturbation theory. A

  13. Passive solar construction handbook

    Energy Technology Data Exchange (ETDEWEB)

    Levy, E.; Evans, D.; Gardstein, C.

    1981-08-01

    Many of the basic elements of passive solar design are reviewed. The unique design constraints presented in passive homes are introduced and many of the salient issues influencing design decisions are described briefly. Passive solar construction is described for each passive system type: direct gain, thermal storage wall, attached sunspace, thermal storage roof, and convective loop. For each system type, important design and construction issues are discussed and case studies illustrating designed and built examples of the system type are presented. Construction details are given and construction and thermal performance information is given for the materials used in collector components, storage components, and control components. Included are glazing materials, framing systems, caulking and sealants, concrete masonry, concrete, brick, shading, reflectors, and insulators. The Load Collector Ratio method for estimating passive system performance is appended, and other analysis methods are briefly summarized. (LEW)

  14. Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires

    International Nuclear Information System (INIS)

    Shu Haibo; Chen Xiaoshuang; Ding Zongling; Dong Ruibin; Lu Wei

    2010-01-01

    The mechanism of the preferential adsorption of Ga on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires is studied by using first-principles calculations within density functional theory. The calculated results show that Au preadsorption on GaAs(111)B surface significantly enhances the stability of the Ga adatom in comparison with the adsorption of Ga on clean GaAs(111)B surface. The stabilization of the Ga adatom is due to charge transfers from the Ga 4p and 4s states to the Au 6s and As 4p states. The number of Ga adatoms stabilized on GaAs(111)B surfaces depends on the size of surface Au cluster. The reason is that Au acted as an electron acceptor on GaAs(111)B surface assists the charge transfer of Ga adatoms for filling the partial unoccupied bands of GaAs(111)B surface. Our results are helpful to understand the growth of Au-assisted GaAs nanowires.

  15. Femtosecond pulsed laser ablation of GaAs

    International Nuclear Information System (INIS)

    Trelenberg, T.W.; Dinh, L.N.; Saw, C.K.; Stuart, B.C.; Balooch, M.

    2004-01-01

    The properties of femtosecond-pulsed laser deposited GaAs nanoclusters were investigated. Nanoclusters of GaAs were produced by laser ablating a single crystal GaAs target in vacuum or in a buffer gas using a Ti-sapphire laser with a 150 fs minimum pulse length. For in-vacuum deposition, X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) revealed that the average cluster size was approximately 7 nm for laser pulse lengths between 150 fs and 25 ps. The average cluster size dropped to approximately 1.5 nm at a pulse length of 500 ps. It was also observed that film thickness decreased with increasing laser pulse length. A reflective coating, which accumulated on the laser admission window during ablation, reduced the amount of laser energy reaching the target for subsequent laser shots and developed more rapidly at longer pulse lengths. This observation indicates that non-stoichiometric (metallic) ablatants were produced more readily at longer pulse lengths. The angular distribution of ejected material about the target normal was well fitted to a bi-cosine distribution of cos 47 θ+ cos 4 θ for ablation in vacuum using 150 fs pulses. XPS and AES revealed that the vacuum-deposited films contained excess amorphous Ga or As in addition to the stoichiometric GaAs nanocrystals seen with XRD. However, films containing only the GaAs nanocrystals were produced when ablation was carried out in the presence of a buffer gas with a pressure in excess of 6.67 Pa. At buffer gas pressure on the order of 1 Torr, it was found that the stoichiometry of the ablated target was also preserved. These experiments indicate that both laser pulse length and buffer gas pressure play important roles in the formation of multi-element nanocrystals by laser ablation. The effects of gas pressure on the target's morphology and the size of the GaAs nanocrystals formed will also be discussed

  16. Passivity and Evolutionary Game Dynamics

    KAUST Repository

    Park, Shinkyu; Shamma, Jeff S.; Martins, Nuno C.

    2018-01-01

    This paper investigates an energy conservation and dissipation -- passivity -- aspect of dynamic models in evolutionary game theory. We define a notion of passivity using the state-space representation of the models, and we devise systematic methods to examine passivity and to identify properties of passive dynamic models. Based on the methods, we describe how passivity is connected to stability in population games and illustrate stability of passive dynamic models using numerical simulations.

  17. Passivity and Evolutionary Game Dynamics

    KAUST Repository

    Park, Shinkyu

    2018-03-21

    This paper investigates an energy conservation and dissipation -- passivity -- aspect of dynamic models in evolutionary game theory. We define a notion of passivity using the state-space representation of the models, and we devise systematic methods to examine passivity and to identify properties of passive dynamic models. Based on the methods, we describe how passivity is connected to stability in population games and illustrate stability of passive dynamic models using numerical simulations.

  18. Aktiv kontra passiv forvaltning

    DEFF Research Database (Denmark)

    Bechmann, Ken L.; Pedersen, Lasse Heje

    2017-01-01

    Fordele og ulemper ved aktiv og passiv forvaltning har fået fornyet opmærksomhed blandt andet i forbindelse med den forestående implementering af MiFID II. Som bidrag til denne diskussion indeholder dette nummer af Finans/Invest tre artikler, der behandler aktiv og passiv forvaltning fra...... forskellige vinkler. Denne leder forklarer, hvorfor valget mellem aktiv og passiv forvaltning er mere kompliceret, end hvad man kunne tro ved første øjekast, og konkluderer, at der vil være plads til - og behov for - begge typer forvaltning....

  19. Most energetic passive states.

    Science.gov (United States)

    Perarnau-Llobet, Martí; Hovhannisyan, Karen V; Huber, Marcus; Skrzypczyk, Paul; Tura, Jordi; Acín, Antonio

    2015-10-01

    Passive states are defined as those states that do not allow for work extraction in a cyclic (unitary) process. Within the set of passive states, thermal states are the most stable ones: they maximize the entropy for a given energy, and similarly they minimize the energy for a given entropy. Here we find the passive states lying in the other extreme, i.e., those that maximize the energy for a given entropy, which we show also minimize the entropy when the energy is fixed. These extremal properties make these states useful to obtain fundamental bounds for the thermodynamics of finite-dimensional quantum systems, which we show in several scenarios.

  20. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  1. GaAs nanocrystals: Structure and vibrational properties

    International Nuclear Information System (INIS)

    Nayak, J.; Sahu, S.N.; Nozaki, S.

    2006-01-01

    GaAs nanocrystals were grown on indium tin oxide substrate by an electrodeposition technique. Atomic force microscopic measurement indicates an increase in the size of the nanocrystal with decrease in the electrolysis current density accompanied by the change in the shape of the crystallite. Transmission electron microscopic measurements identify the crystallite sizes to be in the range of 10-15 nm and the crystal structure to be orthorhombic. On account of the quantum size effect, the first optical transition was blue shifted with respect to the band gap of the bulk GaAs and the excitonic peak appeared prominent. A localized phonon mode ascribed to certain point defect occurred in the room temperature micro-Raman spectrum

  2. Testing a GaAs cathode in SRF gun

    International Nuclear Information System (INIS)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-01-01

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10 -12 Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to ∼10 -9 Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating

  3. Resistance Fluctuations in GaAs Nanowire Grids

    Directory of Open Access Journals (Sweden)

    Ivan Marasović

    2014-01-01

    Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

  4. X-ray electron density distribution of GaAs

    International Nuclear Information System (INIS)

    Pietsch, U.

    1986-01-01

    Using ten X-ray structure amplitudes of strong reflections and nine weak reflections both, the valence electron and the difference electron density distribution of GaAs, are calculated. The experimental data are corrected for anomalous dispersion using a bond charge model. The calculated plots are compared with up to now published band structure-based and semiempirically calculated density plots. Taking into account the experimental data of germanium, measured on the same absolute scale, the difference density between GaAs and Ge is calculated. This exhibits the charge transfer between both the f.c.c.-sublattices as well as both, the shift and the decrease of the bond charge, quite closely connected to the theoretical results published by Baur et al. (author)

  5. Spin transport anisotropy in (110)GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Odilon, D.D.C. Jr.; Rudolph, Joerg; Hey, Rudolf; Santos, Paulo V. [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Iikawa, Fernando [Universidade Estadual de Campinas, IFGW, Campinas SP (Brazil)

    2007-07-01

    Mobile piezoelectric potentials are used to coherently transport electron spins in GaAs(110) quantum wells (QW) over distances exceeding 60{mu}m. We demonstrate that the dynamics of mobile spins under external magnetic fields depends on the direction of motion in the QW plane. The weak piezoelectric fields impart a non-vanishing average velocity to the carriers, allowing for the direct observation of the carrier momentum dependence of the spin polarization dynamics. While transport along [001] direction presents high in-plane spin relaxation rates, transport along [ anti 110] shows a much weaker external field dependence due to the non-vanishing internal magnetic field. We show that the anisotropy is an intrinsic property of the underling GaAs matrix, associated with the bulk inversion asymmetry contribution to the LS-coupling.

  6. Vacancies and negative ions in GaAs

    International Nuclear Information System (INIS)

    Corbel, C.

    1991-01-01

    We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration

  7. Ion induced charge collection in GaAs MESFETs

    International Nuclear Information System (INIS)

    Campbell, A.; Knudson, A.; McMorrow, D.; Anderson, W.; Roussos, J.; Espy, S.; Buchner, S.; Kang, K.; Kerns, D.; Kerns, S.

    1989-01-01

    Charge collection measurements on GaAs MESFET test structures demonstrate that more charge can be collected at the gate than is deposited in the active layer and more charge can be collected at the drain than the total amount of charge produced by the ion. Enhanced charge collection at the gate edge is also observed. The current transients produced by the energetic ions have been measured directly with about 20 picosecond resolution

  8. Epitaxial growth on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

    2013-01-01

    Roč. 16, č. 1 (2013), s. 59-64 ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

  9. Fast GaAs photoconductor responses to subnanosecond proton pulses

    International Nuclear Information System (INIS)

    Pochet, T.

    1993-01-01

    GaAs photoconductors have been tailored to detect ultrafast proton pulses having energies ranging between 4 and 9 MeV. The sensitivity, the linearity and the speed of response of the devices are analyzed as a function of their neutron pre-irradiation treatment. The dependence of the sensitivity on the proton energy and the applied polarization is also studied. Finally, the experimental results are compared with a simple theoretical model

  10. Semi-insulating GaAs detectors of fast neutrons

    International Nuclear Information System (INIS)

    Sagatova, A.; Sedlackova, K.; Necas, V.; Zatko, B.; Dubecky, F.; Bohacek, P.

    2012-01-01

    The present work deals with the technology of HDPE neutron conversion layer application on the surface of semi-insulating (SI) GaAs detectors via developed polypropylene (PP) based glue. The influence of glue deposition on the electric properties of the detectors was studied as well as the ability of the detectors to register the fast neutrons from "2"3"9Pu-Be neutron source. (authors)

  11. Solar heating of GaAs nanowire solar cells.

    Science.gov (United States)

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

  12. Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

    Directory of Open Access Journals (Sweden)

    Warner Jeffrey H.

    2017-01-01

    Full Text Available GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD. The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a displacement damage dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

  13. Ab initio study of hot electrons in GaAs

    OpenAIRE

    Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B.; Louie, Steven G.

    2015-01-01

    Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation...

  14. Techniques for active passivation

    Science.gov (United States)

    Roscioli, Joseph R.; Herndon, Scott C.; Nelson, Jr., David D.

    2016-12-20

    In one embodiment, active (continuous or intermittent) passivation may be employed to prevent interaction of sticky molecules with interfaces inside of an instrument (e.g., an infrared absorption spectrometer) and thereby improve response time. A passivation species may be continuously or intermittently applied to an inlet of the instrument while a sample gas stream is being applied. The passivation species may have a highly polar functional group that strongly binds to either water or polar groups of the interfaces, and once bound presents a non-polar group to the gas phase in order to prevent further binding of polar molecules. The instrument may be actively used to detect the sticky molecules while the passivation species is being applied.

  15. Passive radon daughter dosimeters

    International Nuclear Information System (INIS)

    McElroy, R.G.C.; Johnson, J.R.

    1986-03-01

    On the basis of an extensive review of the recent literature concerning passive radon daughter dosimeters, we have reached the following conclusions: 1) Passive dosimeters for measuring radon are available and reliable. 2) There does not presently exist an acceptable passive dosimeter for radon daughters. There is little if any hope for the development of such a device in the foreseeable future. 3) We are pessimistic about the potential of 'semi-passive dosimeters' but are less firm about stating categorically that these devices cannot be developed into a useful radon daughter dosimeter. This report documents and justifies these conclusions. It does not address the question of the worker's acceptance of these devices because at the present time, no device is sufficiently advanced for this question to be meaningful. 118 refs

  16. Passive Mixing inside Microdroplets

    Directory of Open Access Journals (Sweden)

    Chengmin Chen

    2018-04-01

    Full Text Available Droplet-based micromixers are essential units in many microfluidic devices for widespread applications, such as diagnostics and synthesis. The mixers can be either passive or active. When compared to active methods, the passive mixer is widely used because it does not require extra energy input apart from the pump drive. In recent years, several passive droplet-based mixers were developed, where mixing was characterized by both experiments and simulation. A unified physical understanding of both experimental processes and simulation models is beneficial for effectively developing new and efficient mixing techniques. This review covers the state-of-the-art passive droplet-based micromixers in microfluidics, which mainly focuses on three aspects: (1 Mixing parameters and analysis method; (2 Typical mixing element designs and the mixing characters in experiments; and, (3 Comprehensive introduction of numerical models used in microfluidic flow and diffusion.

  17. Burst annealing of high temperature GaAs solar cells

    Science.gov (United States)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  18. Burst annealing of high temperature GaAs solar cells

    International Nuclear Information System (INIS)

    Brothers, P.R.; Horne, W.E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

  19. Metallization systems for stable ohmic contacts to GaAs

    International Nuclear Information System (INIS)

    Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

    1986-01-01

    A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

  20. Nitridation of porous GaAs by an ECR ammonia plasma

    International Nuclear Information System (INIS)

    Naddaf, M; Hullavarad, S S; Ganesan, V; Bhoraskar, S V

    2006-01-01

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy

  1. Nitridation of porous GaAs by an ECR ammonia plasma

    Energy Technology Data Exchange (ETDEWEB)

    Naddaf, M [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India); Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic); Hullavarad, S S [Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742 (United States); Ganesan, V [Inter University Consortium, Indore (India); Bhoraskar, S V [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India)

    2006-02-15

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

  2. Nitridation of porous GaAs by an ECR ammonia plasma

    Science.gov (United States)

    Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

    2006-02-01

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

  3. Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs

    International Nuclear Information System (INIS)

    Ney, A; Harris, J S Jr; Parkin, S S P

    2006-01-01

    The temperature dependence of the magnetization of a light emitting diode having a ferromagnetic contact (spin-LED) is measured from 2 to 300 K in magnetic fields from 30 to 70 kOe and it is found that it originates from the GaAs substrate. The magnetization of GaAs comprises a van Vleck-type paramagnetic contribution to the susceptibility which scales inversely with the band gap of the semiconductor. Thus, the temperature dependence of the band gap of GaAs accounts for the non-linear temperature dependent magnetic susceptibility of GaAs and thus, at large magnetic fields, for the spin-LED

  4. CANDU passive shutdown systems

    Energy Technology Data Exchange (ETDEWEB)

    Hart, R S; Olmstead, R A [AECL CANDU, Sheridan Park Research Community, Mississauga, ON (Canada)

    1996-12-01

    CANDU incorporates two diverse, passive shutdown systems, independent of each other and from the reactor regulating system. Both shutdown systems function in the low pressure, low temperature, moderator which surrounds the fuel channels. The shutdown systems are functionally different, physically separate, and passive since the driving force for SDS1 is gravity and the driving force for SDS2 is stored energy. The physics of the reactor core itself ensures a degree of passive safety in that the relatively long prompt neutron generation time inherent in the design of CANDU reactors tend to retard power excursions and reduces the speed required for shutdown action, even for large postulated reactivity increases. All passive systems include a number of active components or initiators. Hence, an important aspect of passive systems is the inclusion of fail safe (activated by active component failure) operation. The mechanisms that achieve the fail safe action should be passive. Consequently the passive performance of the CANDU shutdown systems extends beyond their basic modes of operation to include fail safe operation based on natural phenomenon or stored energy. For example, loss of power to the SDS1 clutches results in the drop of the shutdown rods by gravity, loss of power or instrument air to the injection valves of SDS2 results in valve opening via spring action, and rigorous self checking of logic, data and timing by the shutdown systems computers assures a fail safe reactor trip through the collapse of a fluctuating magnetic field or the discharge of a capacitor. Event statistics from operating CANDU stations indicate a significant decrease in protection system faults that could lead to loss of production and elimination of protection system faults that could lead to loss of protection. This paper provides a comprehensive description of the passive shutdown systems employed by CANDU. (author). 4 figs, 3 tabs.

  5. High-performance passive microwave survey on Josephson junctions

    International Nuclear Information System (INIS)

    Denisov, A.G.; Radzikhovsky, V.N.; Kudeliya, A.M.

    1994-01-01

    The quasi-optical generations of image of objects with their internal structure in millimeter (MM) and submillimeter (SMM) bands is one of the prime problems of modern radioelectronics. The main advantage of passive MM imaging systems in comparison with visible and infrared (IR) systems is small attenuation of signals in fog, cloud, smoke, dust and other obscurants. However at a panoramic scanning of space the observation time lengthens and thereby the information processing rate becomes restricted. So that single-channel system cannot image in real time. Therefore we must use many radiometers in parallel to reduce the observation time. Such system must contain receiving sensors as pixels in multibeam antenna. The use of Josephson Junctions (JJ) for this purpose together with the cryoelectronic devices like GaAs FET or SQUIDS for signal amplifications after JJ is of particular interest in this case

  6. High-performance passive microwave survey on Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Denisov, A.G.; Radzikhovsky, V.N.; Kudeliya, A.M. [State Research Center of Superconductive Radioelectronics, Kiev (Ukraine)

    1994-12-31

    The quasi-optical generations of image of objects with their internal structure in millimeter (MM) and submillimeter (SMM) bands is one of the prime problems of modern radioelectronics. The main advantage of passive MM imaging systems in comparison with visible and infrared (IR) systems is small attenuation of signals in fog, cloud, smoke, dust and other obscurants. However at a panoramic scanning of space the observation time lengthens and thereby the information processing rate becomes restricted. So that single-channel system cannot image in real time. Therefore we must use many radiometers in parallel to reduce the observation time. Such system must contain receiving sensors as pixels in multibeam antenna. The use of Josephson Junctions (JJ) for this purpose together with the cryoelectronic devices like GaAs FET or SQUIDS for signal amplifications after JJ is of particular interest in this case.

  7. X-ray diffraction from single GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas

    2012-11-12

    In recent years, developments in X-ray focussing optics have allowed to produce highly intense, coherent X-ray beams with spot sizes in the range of 100 nm and below. Together with the development of new experimental stations, X-ray diffraction techniques can now be applied to study single nanometer-sized objects. In the present work, X-ray diffraction is applied to study different aspects of the epitaxial growth of GaAs nanowires. Besides conventional diffraction methods, which employ X-ray beams with dimensions of several tens of {mu}m, special emphasis lies on the use of nanodiffraction methods which allow to study single nanowires in their as-grown state without further preparation. In particular, coherent X-ray diffraction is applied to measure simultaneously the 3-dimensional shape and lattice parameters of GaAs nanowires grown by metal-organic vapor phase epitaxy. It is observed that due to a high density of zinc-blende rotational twins within the nanowires, their lattice parameter deviates systematically from the bulk zinc-blende phase. In a second step, the initial stage in the growth of GaAs nanowires on Si (1 1 1) surfaces is studied. This nanowires, obtained by Ga-assisted growth in molecular beam epitaxy, grow predominantly in the cubic zinc-blende structure, but contain inclusions of the hexagonal wurtzite phase close to their bottom interface. Using nanodiffraction methods, the position of the different structural units along the growth axis is determined. Because the GaAs lattice is 4% larger than silicon, these nanowires release their lattice mismatch by the inclusion of dislocations at the interface. Whereas NWs with diameters below 50 nm are free of strain, a rough interface structure in nanowires with diameters above 100 nm prevents a complete plastic relaxation, leading to a residual strain at the interface that decays elastically along the growth direction. Finally, measurements on GaAs-core/InAs-shell nanowire heterostructures are presented

  8. Passive House Solutions

    Energy Technology Data Exchange (ETDEWEB)

    Strom, I.; Joosten, L.; Boonstra, C. [DHV Sustainability Consultants, Eindhoiven (Netherlands)

    2006-05-15

    PEP stands for 'Promotion of European Passive Houses' and is a consortium of European partners, supported by the European Commission, Directorate General for Energy and Transport. In this working paper an overview is given of Passive House solutions. An inventory has been made of Passive House solutions for new build residences applied in each country. Based on this, the most common basic solutions have been identified and described in further detail, including the extent to which solutions are applied in common and best practice and expected barriers for the implementation in each country. An inventory per country is included in the appendix. The analysis of Passive House solutions in partner countries shows high priority with regard to the performance of the thermal envelope, such as high insulation of walls, roofs, floors and windows/ doors, thermal bridge-free construction and air tightness. Due to the required air tightness, special attention must be paid to indoor air quality through proper ventilation. Finally, efficient ((semi-)solar) heating systems for combined space and DHW heating still require a significant amount of attention in most partner countries. Other basic Passive House solutions show a smaller discrepancy with common practice and fewer barriers have been encountered in partner countries. In the next section, the general barriers in partner countries have been inventoried. For each type of barrier a suggested approach has been given. Most frequently encountered barriers in partner countries are: limited know-how; limited contractor skills; and acceptation of Passive Houses in the market. Based on the suggested approaches to overcoming barriers, this means that a great deal of attention must be paid to providing practical information and solutions to building professionals, providing practical training to installers and contractors and communication about the Passive House concept to the market.

  9. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    Science.gov (United States)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  10. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F. [University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573 (Japan)

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerance of GaAs and that Ti can protected GaAs from erosion by NH{sub 3}. By depositing Ti on GaAs(111)A surface, a mirror-like GaN layer could be grown at 1000 C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Measure Guideline: Passive Vents

    Energy Technology Data Exchange (ETDEWEB)

    Berger, David [Consortium for Advanced Residential Buildings, Norwalk, CT (United States); Neri, Robin [Consortium for Advanced Residential Buildings, Norwalk, CT (United States)

    2016-02-05

    This document addresses the use of passive vents as a source of outdoor air in multifamily buildings. The challenges associated with implementing passive vents and the factors affecting performance are outlined. A comprehensive design methodology and quantified performance metrics are provided. Two hypothetical design examples are provided to illustrate the process. This document is intended to be useful to designers, decision-makers, and contractors implementing passive ventilation strategies. It is also intended to be a resource for those responsible for setting high-performance building program requirements, especially pertaining to ventilation and outdoor air. To ensure good indoor air quality, a dedicated source of outdoor air is an integral part of high-performance buildings. Presently, there is a lack of guidance pertaining to the design and installation of passive vents, resulting in poor system performance. This report details the criteria necessary for designing, constructing, and testing passive vent systems to enable them to provide consistent and reliable levels of ventilation air from outdoors.

  12. A study of multilayer passive components for uniplanar MMICs

    International Nuclear Information System (INIS)

    Gokdemir, T.

    2000-01-01

    This thesis is concerned with the modelling, design, and characterisation of passive components on Gallium Arsenide (GaAs) and silicon substrates at microwave and millimeter-wave frequencies. The passive components are a vital part of all monolithic microwave integrated circuits (MMICs) because they are used as building blocks to design much larger and more complicated circuits which may employ many active devices. The initial building blocks not only shape the overall performance but also contribute to the final layout and cost depending on how compact these components are. Therefore, this thesis looks at techniques that can be used to achieve higher levels of integration of microwave circuitry and to overcome the need for through-substrate via holes and related back-face processing steps. Topics such as coplanar waveguide (CPW) and multilayer techniques have been covered with this aim. This work begins with an introduction to MMIC design. This is followed by a look at how computer aided design (CAD) packages can be used to enhance circuit design at microwave frequencies. A detailed practical investigation into multilayer structures on GaAs and silicon substrates is undertaken. In order to analyse these structures test masks have been prepared and fabricated. These structures have been characterised and verified with measurements where possible. For the first time, two types of novel multilayer 14-36 GHz MMIC CPW coupled-line 3 dB directional couplers have been realised by using a three metal level MMIC process. The couplers incorporate both broadside and edge coupling in order to obtain a tight coupling. A new method of realising compact baluns at millimeter-wave frequencies is presented and its operation is explained. The analysis has been verified with practical baluns which employed multilayer CPW directional couplers. An alternative balun for lower frequencies has also been proposed and successfully demonstrated experimentally using compact spiral couplers

  13. Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

    Science.gov (United States)

    Jameel, D. A.; Aziz, M.; Felix, J. F.; Al Saqri, N.; Taylor, D.; Albalawi, H.; Alghamdi, H.; Al Mashary, F.; Henini, M.

    2016-11-01

    This article reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I-V measurements at different temperatures (20-420 K). The I-V results indicate that the value of the rectification ratio (IF/IR) at 0.5 V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. The high value of mean barrier Φbarb of SPAN/(311)B (calculated from the plots of Φb 0 as a function of 1/2kT) confirms that the GaAs substrate orientation results in an increase of barrier homogeneities. Furthermore, the C-V characteristics were obtained at room temperature. The C-V measurements showed that the carrier distributions at the interface and away from the interface in high index (311) GaAs orientations are more uniform and have better barrier homogeneity than those grown on the conventional (100) GaAs substrates.

  14. Self-Assembled Monolayers of CdSe Nanocrystals on Doped GaAs Substrates

    DEFF Research Database (Denmark)

    Marx, E.; Ginger, D.S.; Walzer, Karsten

    2002-01-01

    This letter reports the self-assembly and analysis of CdSe nanocrystal monolayers on both p- and a-doped GaAs substrates. The self-assembly was performed using a 1,6-hexanedithiol self-assembled monolayer (SAM) to link CdSe nanocrystals to GaAs substrates. Attenuated total reflection Fourier tran...

  15. Structure and homoepitaxial growth of GaAs(6 3 1)

    International Nuclear Information System (INIS)

    Mendez-Garcia, V.H.; Ramirez-Arenas, F.J.; Lastras-Martinez, A.; Cruz-Hernandez, E.; Pulzara-Mora, A.; Rojas-Ramirez, J.S.; Lopez-Lopez, M.

    2006-01-01

    We have studied the surface atomic structure of GaAs(6 3 1), and the GaAs growth by molecular beam epitaxy (MBE) on this plane. After the oxide desorption process at 585 deg. Creflection high-energy electron diffraction (RHEED) showed along the [-1 2 0] direction a 2x surface reconstruction for GaAs(6 3 1)A, and a 1x pattern was observed for GaAs(6 3 1)B. By annealing the substrates for 60 min, we observed that on the A surface appeared small hilly-like features, while on GaAs(6 3 1)B surface pits were formed. For GaAs(6 3 1)A, 500 nm-thick GaAs layers were grown at 585 deg. C. The atomic force microscopy (AFM) images at the end of growth showed the self-formation of nanoscale structures with a pyramidal shape enlarged along the [5-9-3] direction. Transversal views of the bulk-truncated GaAs(6 3 1) surface model showed arrays of atomic grooves along this direction, which could influence the formation of the pyramidal structures

  16. Constructing passive houses

    Energy Technology Data Exchange (ETDEWEB)

    Oehler, S. [Oehler Faigle Archkom Solar Architektur, Bretten (Germany)

    2005-07-01

    Everybody can learn to build energy-efficient. It needs theoretical and practical experience. 1997 we built the first freestanding Passive House in Europe, the Passive House Oehler. There had been a lot of questions, starting with the insecurity, whether the calculation program of the Passive House Institute, the PHPP, is working properly in our case. Nobody knew at that time because nobody tried it out before. It took us a lot of time to find out and every detail of the construction hat to be invented to meet the very high demand of thermal quality. All the following houses needed less time and had fewer open questions, adding one piece of experience with every building. 2002 we realised the biggest Passive House, the office building Energon Ulm with 420 working spaces. In the meantime we have learned a lot like how to produce prefabricated timber elements for the facades, providing good insulation, air tightness and avoiding serious thermal bridges. We have proofed, that any kind of building type can be a Passive House. And with increasing experience the freedom of design and construction is growing. Even the economical efficiency increased. The Energon Ulm is providing a much better indoor climate than any other office building and was build 10 % cheaper than an average German office building. At present the Passive House Standard is the most efficient solution for the user to live in the desired comfort zone between 20 C and 25 C. This zone of individual feeling-well can be described with the term ''operative temperature''. This term is defined by factors like air temperature, radiation temperature of warm and cold surfaces, air speed and humidity. The result of all these factors has to be within 18 C to 25 C without accepting one of the factors getting extreme.

  17. Passive containment system

    International Nuclear Information System (INIS)

    Kleimola, F.W.

    1977-01-01

    Disclosed is a containment system that provides complete protection entirely by passive means for the loss of coolant accident in a nuclear power plant and wherein all stored energy released in the coolant blowdown is contained and absorbed while the nuclear fuel is prevented from over-heating by a high containment back-pressure and a reactor vessel refill system. The primary containment vessel is restored to a high sub-atmospheric pressure within a few minutes after accident initiation and the decay heat is safely transferred to the environment while radiolytic hydrogen is contained by passive means. 20 claims, 14 figures

  18. Wireless passive radiation sensor

    Science.gov (United States)

    Pfeifer, Kent B; Rumpf, Arthur N; Yelton, William G; Limmer, Steven J

    2013-12-03

    A novel measurement technique is employed using surface acoustic wave (SAW) devices, passive RF, and radiation-sensitive films to provide a wireless passive radiation sensor that requires no batteries, outside wiring, or regular maintenance. The sensor is small (<1 cm.sup.2), physically robust, and will operate unattended for decades. In addition, the sensor can be insensitive to measurement position and read distance due to a novel self-referencing technique eliminating the need to measure absolute responses that are dependent on RF transmitter location and power.

  19. Amateurism in an Age of Professionalism: An Empirical Examination of an Irish Sporting Culture: The GAA

    Directory of Open Access Journals (Sweden)

    Ian Keeler

    2013-07-01

    This research study recommends that the GAA adopt an innovative approach, through strategic decision-making, to allow the GAA to maintain its amateur ethos, and, yet, successfully compete in the professional sporting market. The strong links with the community must be both nurtured and enhanced. The GAA and Gaelic games must embrace the challenges that the branding success of foreign sports has brought. Player welfare issues for the elite players must be addressed while continuing to protect the club and its amateur structures. The study looks at the key metrics that are required to evolve the GAA. This entails not only focusing on the perceived importance of the amateur ethos to the GAA, but also developing the marketing, branding and profiling of Gaelic games to enhance the performance of an amateur sporting organization in an era of increased professionalism in sport.

  20. Laser-induced bandgap collapse in GaAs

    Science.gov (United States)

    Siegal, Y.; Glezer, Eli N.; Huang, Li; Mazur, Eric

    1994-05-01

    We present recent time-resolved measurements of the linear dielectric constant of GaAs at 2.2 eV and 4.4 eV following femtosecond laser pulse excitation. In sharp contrast to predictions based on the widely used Drude model, the data show an interband absorption peak coming into resonance first with the 4.4 eV probe photon energy and then with the 2.2 eV probe photon energy, indicating major changes in the band structure. The time scale for these changes ranges from within 100 fs to a few picoseconds, depending on the incident pump pulse fluence.

  1. Investigation of Optically Induced Avalanching in GaAs

    Science.gov (United States)

    1989-06-01

    by Bovino , et al 4 to increase the hold off voltage. The button switch design of Fig. 4c has been used by several researchers5 ’ 7 to obtain the...ul Long flashover palh Figure 3b. 434 Optical Jlatlern a. Mourou Switch b. Bovino Switch c. Button Switch Figure 4. Photoconductive Switches...Technology and Devices Laboratory, ERADCOM (by L. Bovino , et. all) 4 • The deposition recipe for the contacts is 1) 50 ANi (provides contact to GaAs

  2. Study of irradiation defects in GaAs

    International Nuclear Information System (INIS)

    Loualiche, S.

    1982-11-01

    Characterization techniques: C(V) differential capacity, DLTS deep level transient spectroscopy, DDLTS double deep level transient spectroscopy and DLOS deep level optical spectroscopy are studied and theoretical and experimental fundamentals are re-examined. In particular the centres created by ionic or electronic bombardment of p-type GaAs. New quantitative theoretical bases for the C(V) method are obtained. Study of the optical properties of traps due to irradiation using DLOS. The nature of irradiation defects are discussed [fr

  3. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

    International Nuclear Information System (INIS)

    Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.; Keyes, B. M.

    2000-01-01

    Minority carrier lifetimes and interface recombination velocities for GaAs grown on a Si wafer using compositionally graded GeSi buffers have been investigated as a function of GaAs buffer thickness using monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of antiphase domain disorder, with threading dislocation densities measured by etch pit density of 5x10 5 -2x10 6 cm -2 . Analysis indicates no degradation in either minority carrier lifetime or interface recombination velocity down to a GaAs buffer thickness of 0.1 μm. In fact, record high minority carrier lifetimes exceeding 10 ns have been obtained for GaAs on Si with a 0.1 μm GaAs buffer. Secondary ion mass spectroscopy reveals that cross diffusion of Ga, As, and Ge at the GaAs/Ge interface formed on the graded GeSi buffers are below detection limits in the interface region, indicating that polarity control of the GaAs/Ge interface formed on GeSi/Si substrates can be achieved. (c) 2000 American Institute of Physics

  4. Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

    Science.gov (United States)

    Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

    2018-05-01

    We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be -oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

  5. Passiv-Sammler

    OpenAIRE

    Fritsche, U.

    1991-01-01

    The invention relates to a passive collector for air pollution for the determination of emission rates for dry and wet deposits on construction materials such as natural stone, whereby the collector has a surrogate surface of the stone under investigation, the surrogate surface being linked to a collecting vessel such that any dry or wet contamination occurring can be collected.

  6. Passive houses in Norway

    Energy Technology Data Exchange (ETDEWEB)

    Halse, Andreas

    2008-12-15

    The paper analyzes the introduction of passive houses in the Norwegian house market. Passive houses are houses with extremely low levels of energy consumption for heating, and have not yet been built in Norway, but have started to enter the market in Germany and some other countries. The construction sector is analyzed as a sectoral innovation system. The different elements of the innovation system are studied. This includes government agencies, producers, consumers, finance and education. The analysis shows that passive and low-energy houses are on the verge of market breakthrough. This can partly be explained by economic calculations, and partly by processes of learning and change in the institutional set-up of the sector. The construction sector is a sector characterized by low innovative intensity and little interaction between different agents. Those working to promote passive houses have to some extent managed to cope with these challenges. This has happened by breaking away from the traditional focus of Norwegian energy efficiency policies on technology and the economically rational agents, by instead focusing on knowledge and institutional change at the level of the producers. (Author)

  7. Hood River Passive House

    Energy Technology Data Exchange (ETDEWEB)

    Hales, David [BA-PIRC, Spokane, WA (United States)

    2014-01-01

    The Hood River Passive Project was developed by Root Design Build of Hood River Oregon using the Passive House Planning Package (PHPP) to meet all of the requirements for certification under the European Passive House standards. The Passive House design approach has been gaining momentum among residential designers for custom homes and BEopt modeling indicates that these designs may actually exceed the goal of the U.S. Department of Energy's (DOE) Building America program to "reduce home energy use by 30%-50% (compared to 2009 energy codes for new homes). This report documents the short term test results of the Shift House and compares the results of PHPP and BEopt modeling of the project. The design includes high R-Value assemblies, extremely tight construction, high performance doors and windows, solar thermal DHW, heat recovery ventilation, moveable external shutters and a high performance ductless mini-split heat pump. Cost analysis indicates that many of the measures implemented in this project did not meet the BA standard for cost neutrality. The ductless mini-split heat pump, lighting and advanced air leakage control were the most cost effective measures. The future challenge will be to value engineer the performance levels indicated here in modeling using production based practices at a significantly lower cost.

  8. Passive THz metamaterials

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Malureanu, Radu; Zalkovskij, Maksim

    2012-01-01

    In this work we present our activities in the fabrication and characterization of passive THz metamaterials. We use two fabrication processes to develop metamaterials either as free-standing metallic membranes or patterned metallic multi-layers on the substrates to achieve different functionalities...

  9. Intrinsically Passive Handling and Grasping

    NARCIS (Netherlands)

    Stramigioli, Stefano; Scherpen, Jacquelien M.A.; Khodabandehloo, Koorosh

    2000-01-01

    The paper presents a control philosophy called Intrinsically Passive Control, which has the feature to properly behave during interaction with any passive objects. The controlled robot will never become unstable due to the physical structure of the controller.

  10. Subnanosecond, high voltage photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (USA)); O' Bannon, B.J. (Rockwell International Corp., Anaheim, CA (USA))

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  11. Subnanosecond, high-voltage photoconductive switching in GaAs

    Science.gov (United States)

    Druce, Robert L.; Pocha, Michael D.; Griffin, Kenneth L.; O'Bannon, Jim

    1991-03-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating highpower microwaves (HPM) and for high reprate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanchelike mode (the optical pulse only controls switch closing) . Operating in the unear mode we have observed switch closing times of less than 200 Ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lockon modes high fields are switched with lower laser pulse energies resulting in higher efficiencies but with measurable switching delay and jitter. We are currently investigating both large area (1 cm2) and small area 1 mm2) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1. 06 tim.

  12. Low-energy particle treatment of GaAs surface

    International Nuclear Information System (INIS)

    Pincik, E.; Ivanco, J.; Brunner, R.; Jergel, M.; Falcony, C.; Ortega, L.; Kucera, J. M.

    2002-01-01

    The paper presents results of a complex study of surface properties of high-doped (2x10 18 cm -3 ) and semi-insulating GaAs after an interaction with the particles coming from low-energy ion sources such as RF plasma and ion beams. The virgin samples were mechano-chemically polished liquid-encapsulated Czochralski-grown GaAs (100) oriented wafers. The crystals were mounted on the grounded electrode (holder). The mixture Ar+H 2 as well as O 2 and CF 4 were used as working gases: In addition, a combination of two different in-situ exposures was applied, such as e.g. hydrogen and oxygen. Structural, electrical and optical properties of the exposed surfaces were investigated using X-ray diffraction at grazing incidence, quasi-static and high-frequency C-V curve measurements, deep-level transient spectroscopy, photo-reflectance, and photoluminescence. Plasma and ion beam exposures were performed in a commercial RF capacitively coupled plasma equipment SECON XPL-200P and a commercial LPAI device, respectively. The evolution of surface properties as a function of the pressure of working gas and the duration of exposure was observed. (Authors)

  13. Sn nanothreads in GaAs: experiment and simulation

    Science.gov (United States)

    Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

    2016-12-01

    The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

  14. X-ray imaging bilinear staggered GaAs detectors

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A.; Dvoryankin, V.F. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G.; Dikaev, Y.M.Yu.M.; Krikunov, A.I.; Kudryashov, A.A.; Panova, T.M.; Petrov, A.G.; Telegin, A.A

    2004-09-21

    The multichannel bilinear X-ray detector based on epitaxial GaAs structures is developed to obtain a digital X-ray image. Each detector operates in photovoltaic mode without reverse bias that enables almost complete elimination of detector noise arising due to leakage currents. The sensitivity range of the epitaxial GaAs photovoltaic X-ray detector covers the effective energies from 8 to 120 keV. A maximum response of the detector operating in the short-circuit mode was observed at an energy of 35 keV and amounted to 30 {mu}A min/(Gy cm{sup 2}). The multichannel detector was made of 1024 pixels with pitch of 0.8 mm. The spatial resolution of double staggered sensor row is twice as high as the resolution of that of single sensor row with the same pitch. Measured spatial resolution is 1.2 line-pairs/mm, contrast sensitivity not worse 1% and dynamic range defined as the ratio of maximum detectable X-ray signal to electronic noise level more than 2000 are received.

  15. X-ray imaging bilinear staggered GaAs detectors

    International Nuclear Information System (INIS)

    Achmadullin, R.A.; Dvoryankin, V.F.; Dvoryankina, G.G.; Dikaev, Y.M.Yu.M.; Krikunov, A.I.; Kudryashov, A.A.; Panova, T.M.; Petrov, A.G.; Telegin, A.A.

    2004-01-01

    The multichannel bilinear X-ray detector based on epitaxial GaAs structures is developed to obtain a digital X-ray image. Each detector operates in photovoltaic mode without reverse bias that enables almost complete elimination of detector noise arising due to leakage currents. The sensitivity range of the epitaxial GaAs photovoltaic X-ray detector covers the effective energies from 8 to 120 keV. A maximum response of the detector operating in the short-circuit mode was observed at an energy of 35 keV and amounted to 30 μA min/(Gy cm 2 ). The multichannel detector was made of 1024 pixels with pitch of 0.8 mm. The spatial resolution of double staggered sensor row is twice as high as the resolution of that of single sensor row with the same pitch. Measured spatial resolution is 1.2 line-pairs/mm, contrast sensitivity not worse 1% and dynamic range defined as the ratio of maximum detectable X-ray signal to electronic noise level more than 2000 are received

  16. Bismuth alloying properties in GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Lu [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Cao, Huawei; Cai, Ningning; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Gao, Tao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  17. SXPS study of model GaAs(100)/electrolyte interface

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Mikhail V. [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation); Mankel, Eric; Mayer, Thomas; Jaegermann, Wolfram [Institute of Material Sciences, Darmstadt University of Technology, Darmstadt (Germany)

    2010-02-15

    Model GaAs(100)/electrolyte interfaces are prepared in vacuum by co-adsorption of Cl{sub 2} and 2-propanol molecules at LN{sub 2} temperature. On adsorption of Cl{sub 2} molecules gallium chlorides, elemental arsenic and arsenic chlorides are formed. Co-adsorption of 2-propanol causes formation of additional GaCl{sub 3} and AsCl, as well as soluble/volatile As-based complexes, which are released from the surface depleting the sur- face by arsenic. Comparison of the As 3d and Ga 3d spectra obtained after heating the model interface to room temperature with the corresponding spectra obtained after emersion of the GaAs(100) surface from HCl/2-propanol solution allows to conclude that in HCl solution Cl{sup -} ions attack gallium sites and H{sup +} ions mostly attack arsenic sites. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Characterization study of native oxides on GaAs(100) surface by XPS

    Science.gov (United States)

    Feng, Liu; Zhang, Lian-dong; Liu, Hui; Gao, Xiang; Miao, Zhuang; Cheng, Hong-chang; Wang, Long; Niu, Sen

    2013-08-01

    In order to know more about the surface state of GaAs(100) epitaxial wafer during a storage period of two years, the XPS analysis was carried out four times on the surface, respectively polished by chemical etching, stored in desiccator for half a year, one year and two years. The results indicated that even after cleaned by proper etchant solutions, the fresh surface was slightly oxidized with Ga2O3, As2O3 and organic contaminant. The epi-wafer was always exposed to air during the storage period, so more and more oxides turned out. The mixed oxide layer comprised of C-OR, COOR, Ga2O3, As2O3 and As2O5 appeared after only half a year. In the ageing process of two years, the oxide types of gallium or arsenic did not change with stable content of Ga2O3 and remarkably fluctuating relative contents of As2O3 and As2O5. Based on the intensity ratio of Ga 3d-Ga2O3 to Ga 3d-GaAs, the thickness of oxide layer was estimated. The oxide layer generated after chemical polishing was very thin, just only 0.435nm thick, and then it grew rapidly, approximately 1.822nm after one year while almost no change any more subsequently. It was indicated that after the epi-wafer was stored for one year, because of volatile As2O3 or As2O5, there remained a large amount of Ga2O3 in oxide layer, which prevented the reactions between bulk material and oxide layer with oxygen. So native oxide layer plays a role as passive film to protect epi-wafer against the environment during a long storage period.

  19. Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei; Huo, Dayun; Guo, Xiaoxiang; Rong, Chen; Shi, Zhenwu, E-mail: zwshi@suda.edu.cn; Peng, Changsi, E-mail: changsipeng@suda.edu.cn

    2016-01-01

    Graphical abstract: - Highlights: • Periodic nanostructures were fabricated on GaAs wafers by four-beam laser interference patterning which have potential applications in many fields. • Significant different results were obtained on epi-ready and homo-epitaxial GaAs substrate surfaces. • Two-pulse patterning was carried out on homo-epitaxial GaAs substrate, a noticeable morphology transformation induced by the second pulse was observed. • Temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations. The calculation agrees well with the experiment results. - Abstract: In this paper, periodic nanostructures were fabricated on GaAs wafers by four-beam UV pulsed laser interference patterning. Significant different results were observed on epi-ready and homo-epitaxial GaAs substrate surfaces, which suggests GaAs oxide layer has an important effect on pulsed laser irradiation process. In the case of two-pulse patterning, a noticeable morphology transformation induced by the second pulse was observed on homo-epitaxial GaAs substrate. Based on photo-thermal mode, temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations.

  20. Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

    International Nuclear Information System (INIS)

    Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

    2002-01-01

    In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

  1. Passive solar heating

    Energy Technology Data Exchange (ETDEWEB)

    Wiberg, K

    1981-11-10

    The present work treats the possibilities for heating according to the passive solar heating method. Problems of 'spatial organization in an energy-saving society' are distinguished from among other social problems. The final delimination of the actual problems under investigation consists of the use of passive solar heating and especially the 'consequences of such solar heating exploitation upon the form and structures' of planning and construction. In the concluding chapter an applied example shows how this method can be used in designing an urban area and what are its limitations. The results indicate the possibilities and difficulties in attempting to transfer this ideal and general method into models and directives for form and structure from which examples of the actual possibilities in practical planning can be given.

  2. Strain in GaAs / InAs core-shell nanowire heterostructures grown on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Rieger, Torsten; Lepsa, Mihail Ion [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

    2012-07-01

    The growth of semiconductor nanowires (NWs) has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. Compared to planar heterostructures, the nanowire approach offers an advantage regarding the possibility to form heterostructures between highly lattice mismatched systems, because the free surface of the nanowires allows to relieve the strain more efficiently. One particular way to form heterostructures in the NW geometry, is the fabrication of core-shell devices, in which a NW core is surrounded by a shell of different material. The understanding of the mutual strain between core and shell, as well as the relaxation behavior of the system are crucial for the fabrication of functional devices. In this contribution we report on first X-ray diffraction measurements of GaAs-core/InAs-shell nanowires grown on GaAs(111) by molecular beam epitaxy. Using symmetric- and grazing-incidence X-ray diffraction, the relaxation state of the InAs shell as well as the strain in the GaAs core are measured as function of the InAs shell thickness, showing a gradual relaxation behavior of the shell.

  3. Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li Ning; Choi, Hoi Wai; Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Xu, Jing Ping [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

    2016-09-15

    In this study, GaAs metal-oxide-semiconductor (MOS) capacitors using Y-incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 x 10{sup 11} cm{sup -2} eV{sup -1}), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 x 10{sup -5}A/cm{sup 2} at V{sub fb} + 1 V). These merits should be attributed to the complementary properties of Y{sub 2}O{sub 3} and Ta{sub 2}O{sub 5}:Y can effectively passivate the large amount of oxygen vacancies in Ta{sub 2}O{sub 5}, while the positively-charged oxygen vacancies in Ta{sub 2}O{sub 5} are capable of neutralizing the effects of the negative oxide charges in Y{sub 2}O{sub 3}. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Qademah Fault Passive Data

    KAUST Repository

    Hanafy, Sherif M.

    2014-01-01

    OBJECTIVE: In this field trip we collect passive data to 1. Convert passive to surface waves 2. Locate Qademah fault using surface wave migration INTRODUCTION: In this field trip we collected passive data for several days. This data will be used to find the surface waves using interferometry and then compared to active-source seismic data collected at the same location. A total of 288 receivers are used. A 3D layout with 5 m inline intervals and 10 m cross line intervals is used, where we used 12 lines with 24 receivers at each line. You will need to download the file (rec_times.mat), it contains important information about 1. Field record no 2. Record day 3. Record month 4. Record hour 5. Record minute 6. Record second 7. Record length P.S. 1. All files are converted from original format (SEG-2) to matlab format P.S. 2. Overlaps between records (10 to 1.5 sec.) are already removed from these files

  5. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    Science.gov (United States)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  6. Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

    Directory of Open Access Journals (Sweden)

    Fedorov A

    2010-01-01

    Full Text Available Abstract We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.

  7. Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

    Science.gov (United States)

    1995-10-05

    improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

  8. Concept research on general passive system

    International Nuclear Information System (INIS)

    Han Xu; Yang Yanhua; Zheng Mingguang

    2009-01-01

    This paper summarized the current passive techniques used in nuclear power plants. Through classification and analysis, the functional characteristics and inherent identification of passive systems were elucidated. By improving and extending the concept of passive system, the general passive concept was proposed, and space and time relativity was discussed and assumption of general passive system were illustrated. The function of idealized general passive system is equivalent with the current passive system, but the design of idealized general passive system is more flexible. (authors)

  9. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

    Science.gov (United States)

    Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

    2014-01-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

  10. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Vasiliev, A. L.; Imamov, R. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Trunkin, I. N. [National Research Centre “Kurchatov Institute” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)

    2017-01-15

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.

  11. Miniaturized bandpass filter using a meandered stepped-impedance resonator with a meandered-line stub-load on a GaAs substrate.

    Science.gov (United States)

    Chuluunbaatar, Z; Wang, C; Kim, N Y

    2014-01-01

    This paper reports a compact bandpass filter with improved skirt selectivity using integrated passive device fabrication technology on a GaAs substrate. The structure of the filter consists of electromagnetically coupled meandered-line symmetric stepped-impedance resonators. The strength of the coupling between the resonators is enhanced by using a meandered-line stub-load inside the resonators to improve the selectivity and miniaturize the size of the filter. In addition, the center frequency of the filter can be flexibly controlled by varying degrees of the capacitive coupling between resonator and stub-load. To verify the proposed concept, a protocol bandpass filter with center frequency of 6.53 GHz was designed, fabricated, and measured, with a return loss and insertion loss of 39.1 dB and 1.63 dB.

  12. Miniaturized Bandpass Filter Using a Meandered Stepped-Impedance Resonator with a Meandered-Line Stub-Load on a GaAs Substrate

    Directory of Open Access Journals (Sweden)

    Z. Chuluunbaatar

    2014-01-01

    Full Text Available This paper reports a compact bandpass filter with improved skirt selectivity using integrated passive device fabrication technology on a GaAs substrate. The structure of the filter consists of electromagnetically coupled meandered-line symmetric stepped-impedance resonators. The strength of the coupling between the resonators is enhanced by using a meandered-line stub-load inside the resonators to improve the selectivity and miniaturize the size of the filter. In addition, the center frequency of the filter can be flexibly controlled by varying degrees of the capacitive coupling between resonator and stub-load. To verify the proposed concept, a protocol bandpass filter with center frequency of 6.53 GHz was designed, fabricated, and measured, with a return loss and insertion loss of 39.1 dB and 1.63 dB.

  13. Observation of the anomalous Hall effect in GaAs

    International Nuclear Information System (INIS)

    Miah, M Idrish

    2007-01-01

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect

  14. Observation of the anomalous Hall effect in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M Idrish [Nanoscale Science and Technology Centre, School of Science, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

    2007-03-21

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect.

  15. Improvements of MCT MBE Growth on GaAs

    Science.gov (United States)

    Ziegler, J.; Wenisch, J.; Breiter, R.; Eich, D.; Figgemeier, H.; Fries, P.; Lutz, H.; Wollrab, R.

    2014-08-01

    In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15- μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature ( T OP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a T OP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current-voltage ( IV) characteristics on test diodes in a MWIR FPA.

  16. Self-healing in fractured GaAs nanowires

    International Nuclear Information System (INIS)

    Wang Jun; Lu Chunsheng; Wang Qi; Xiao Pan; Ke Fujiu; Bai Yilong; Shen Yaogen; Wang Yanbo; Chen Bin; Liao Xiaozhou; Gao Huajian

    2012-01-01

    Molecular dynamics simulations are performed to investigate a spontaneous self-healing process in fractured GaAs nanowires with a zinc blende structure. The results show that such self-healing can indeed occur via rebonding of Ga and As atoms across the fracture surfaces, but it can be strongly influenced by several factors, including wire size, number of healing cycles, temperature, fracture morphology, oriented attachment and atomic diffusion. For example, it is found that the self-healing capacity is reduced by 46% as the lateral dimension of the wire increases from 2.3 to 9.2 nm, and by 64% after 24 repeated cycles of fracture and healing. Other factors influencing the self-healing behavior are also discussed.

  17. Towards quantum dots on GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Moesl, Johannes; Ludwig, Stefan [Fakultaet fuer Physik, Center for NanoScience, LMU Munich, Geschwister-Scholl- Platz 1, D-80539 Muenchen (Germany); Fontcuberta i Morral, Anna [TU Munich, Walter Schottky Institut, Am Coulombwall 3, 85748 Garching (Germany); EPF, Lausanne (Switzerland)

    2009-07-01

    Semiconductor nanowires is an emergent research topic in the field of nanoelectronics, as they form an excellent building block for 0D and 1D applications and allow novel architectures and material combinations. We study electronic transport properties of catalyst-free MBE grown GaAs nanowires, p-doped at a number of different doping levels. Detailed characterization of the wires including electronic contacts fabricated by e-beam lithography and based on palladium or annealed zinc-silver alloys are discussed. Contact properties and a pronounced hysteresis of the current through the nanowires, as a backgate-voltage is swept, are explained within tentative models. In addition we present first transport measurements on quantum dots, which are defined electrostatically as well as by etched constrictions.

  18. The apparent effect of sample surface damage on the dielectric parameters of GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)], E-mail: Japie.Engelbrecht@nmmu.ac.za; Hashe, N.G. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Hillie, K.T. [CSIR-NML Laboratory, P.O. Box 395, Pretoria 0001 (South Africa); Claassens, C.H. [Physics Department, University of the Free State, Bloemfontein 9300 (South Africa)

    2007-12-15

    The dielectric and optical parameters determined by infrared reflectance spectroscopy and computer simulation of a set of GaAs substrates of various surface topologies are reported. The influence of surface damage on the parameters is noted.

  19. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    Directory of Open Access Journals (Sweden)

    Takeo Ohno and Yutaka Oyama

    2012-01-01

    Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

  20. Development of GaAs Detectors for Physics at the LHC

    CERN Multimedia

    Chu, Zhonghua; Krais, R; Rente, C; Syben, O; Tenbusch, F; Toporowsky, M; Xiao, Wenjiang; Cavallini, A; Fiori, F; Edwards, M; Geppert, R; Goppert, R; Haberla, C; Hornung, M F; Irsigler, R; Rogalla, M; Beaumont, S; Raine, C; Skillicorn, I; Margelevicius, J; Meshkinis, S; Smetana, S; Jones, B; Santana, J; Sloan, T; Zdansky, K; Alexiev, D; Donnelly, I J; Canali, C; Chiossi, C; Nava, F; Pavan, P; Kubasta, J; Tomiak, Z; Tchmil, V; Tchountonov, A; Tsioupa, I; Dogru, M; Gray, R; Hou, Yuqian; Manolopoulos, S; Walsh, S; Aizenshtadt, G; Budnitsky, D L; Gossen, A; Khludkov, S; Koretskaya, O B; Okaevitch, L; Potapov, A; Stepanov, V E; Tolbanov, O; Tyagev, A; Matulionis, A; Pozela, J; Kavaliauskiene, G; Kazukauskas, V; Kiliulis, R; Rinkevicius, V; Slenys, S; Storasta, J V

    2002-01-01

    % RD-8 Development of GaAs Detectors for Physics at the LHC \\\\ \\\\The aims of the collaboration are to investigate the available material options, performance and limitations of simple pad, pixel and microstrip GaAs detectors for minimum ionising particles with radiation hardness and speed which are competitive with silicon detectors. This new technology was originally developed within our university laboratories but now benefits from increasing industrial interest and collaboration in detector fabrication. Initial steps have also been taken towards the fabrication of GaAs preamplifiers to match the detectors in radiation hardness. The programme of work aims to construct a demonstration detector module for an LHC forward tracker based on GaAs.

  1. The apparent effect of sample surface damage on the dielectric parameters of GaAs

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Hashe, N.G.; Hillie, K.T.; Claassens, C.H.

    2007-01-01

    The dielectric and optical parameters determined by infrared reflectance spectroscopy and computer simulation of a set of GaAs substrates of various surface topologies are reported. The influence of surface damage on the parameters is noted

  2. Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

    Science.gov (United States)

    Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

    1982-04-01

    Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

  3. Growth and characteristics of p-type doped GaAs nanowire

    Science.gov (United States)

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2018-05-01

    The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

  4. CMOS compatible route for GaAs based large scale flexible and transparent electronics

    KAUST Repository

    Nour, Maha A.; Ghoneim, Mohamed T.; Droopad, Ravi; Hussain, Muhammad Mustafa

    2014-01-01

    Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

  5. Plasma treatment of porous GaAs surface formed by electrochemical etching method: Characterization and properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Saloum, S.

    2008-12-01

    Porous GaAs samples were formed by electrochemical anodic etching of Zn doped p-type GaAs (100) wafers at different etching parameters (time, mode of applied voltage or current and electrolyte). The effect of etching parameters and plasma surface treatment on the optical properties of the prepared sample has been investigated by using room temperature photoluminescence (PL), Raman spectroscopy and reflectance spectroscopic measurements in the range (400-800 nm). The surface morphological changes were studied by using atomic force microscope. It has been found that etching parameters can be controlled to produce a considerably low optical reflectivity porous GaAs layer, attractive for use in solar cells. In addition, it has been observed that the deposition of plasma polymerized HMDSO thin film on porous GaAs surface can be utilized to produce a surface with novel optical properties interesting for solar cells and optoelectronic devices. (author)

  6. Initial test of an rf gun with a GaAs cathode installed

    International Nuclear Information System (INIS)

    Aulenbacher, K.; Bossart, R.; Braun, H.

    1996-09-01

    The operation of an rf gun with a GaAs crystal installed as the cathode has been tested in anticipation of eventually producing a polarized electron beam for a future e + /e - collider using an rf photoinjector

  7. High microwave performance ion-implanted GaAs MESFETs on InP substrates

    International Nuclear Information System (INIS)

    Wada, M.; Kato, K.

    1990-01-01

    Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

  8. Accelerated life testing and temperature dependence of device characteristics in GaAs CHFET devices

    Science.gov (United States)

    Gallegos, M.; Leon, R.; Vu, D. T.; Okuno, J.; Johnson, A. S.

    2002-01-01

    Accelerated life testing of GaAs complementary heterojunction field effect transistors (CHFET) was carried out. Temperature dependence of single and synchronous rectifier CHFET device characteristics were also obtained.

  9. CMOS compatible route for GaAs based large scale flexible and transparent electronics

    KAUST Repository

    Nour, Maha A.

    2014-08-01

    Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

  10. High Purity GaAs Far IR Photoconductor With Enhanced Quantum Efficieny, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal introduces an innovative concept aimed to significantly enhance the quantum efficiency of a far-infrared GaAs photoconductor and achieve sensitivity...

  11. Photovoltaic X-ray detectors based on epitaxial GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

    2005-12-01

    A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

  12. RF-MMW Dipole Antenna Arrays From Laser Illuminated GaAs

    National Research Council Canada - National Science Library

    Umphenour, D

    1998-01-01

    High resistivity photoconductive Gallium Arsenide (GaAs) can be used as elemental Hertzian dipole antenna arrays in which the time varying dipole current is produced by temporally modulating a laser (0.63um...

  13. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    Science.gov (United States)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  14. Passive Power Filters

    CERN Document Server

    Künzi, R.

    2015-06-15

    Power converters require passive low-pass filters which are capable of reducing voltage ripples effectively. In contrast to signal filters, the components of power filters must carry large currents or withstand large voltages, respectively. In this paper, three different suitable filter struc tures for d.c./d.c. power converters with inductive load are introduced. The formulas needed to calculate the filter components are derived step by step and practical examples are given. The behaviour of the three discussed filters is compared by means of the examples. P ractical aspects for the realization of power filters are also discussed.

  15. Dynamical properties of tertiarybutylarsine on GaAs(0 0 1) surface

    CERN Document Server

    Ozeki, M; Tanaka, Y

    2002-01-01

    The dynamical properties of tertiarybutylarsine (TBA) was studied on GaAs(0 0 1) surface using a supersonic molecular beam. The temperature and incident energy dependence of the reflected beam revealed a reaction channel of TBA on GaAs surface with a large decrease in the activation energy from 2.7 to 1.8 eV as the incident energy increases from 0.04 to 2.5 eV.

  16. Basic mechanisms study for MIS solar cell structures on GaAs

    Science.gov (United States)

    Fonash, S. J.

    1978-01-01

    The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

  17. Microhardness of epitaxial layers of GaAs doped with rare earths

    International Nuclear Information System (INIS)

    Kulish, U.M.; Gamidov, Z.S.; Kuznetsova, I.Yu.; Petkeeva, L.N.; Borlikova, G.V.

    1989-01-01

    Results of the study of microhardness of GaAS layer doped by certain rare earths - Gd, Tb, Dy - are presented. The assumption is made that the higher is the value of the first potential of rare earth impurity ionization (i.e. the higher is the filling of 4f-shell), the lower is the effect of the element on electric and mechanical properties of GaAs epitaxial layers

  18. GaAs thin film solar cells. Final report; Duennschicht-Solarzellen aus Galliumarsenid; Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Bett, A.; Bronner, W.; Cardona, S.; Ehrhardt, A.; Habermann, G.; Habich, A.; Lanyi, P.; Lutz, F.; Nguyen, T.; Schetter, C.; Sulima, O.; Welter, H.; Yavas, O.

    1992-11-01

    This R and D project focused on the development of materials and technologies for the production of GaAs solar cells on GaAs and other substrates. Three subjects were gone into on particular: Material preparation (epitaxy), solar cell technology, characterisation of materials and processes. (orig.) [Deutsch] Das vorliegende Forschungsvorhaben hatte die Material- und Technologieentwickung fuer die Herstellung von GaAs-Solarzellen auf Eigen- und Fremdsubstrat zum Gegenstand. Drei Hauptaufgabenbereiche waren: Materialpraeparation (Epitaxie), Solarzellentechnologie, sowie Material- und Prozesscharakterisierung. (orig.)

  19. Expansion of passive safety function

    International Nuclear Information System (INIS)

    Inai, Nobuhiko; Nei, Hiromichi; Kumada, Toshiaki.

    1995-01-01

    Expansion of the use of passive safety functions is proposed. Two notions are presented. One is that, in the design of passive safety nuclear reactors where aversion of active components is stressed, some active components are purposely introduced, by which a system is built in such a way that it behaves in an apparently passive manner. The second notion is that, instead of using a passive safety function alone, a passive safety function is combined with some active components, relating the passivity in the safety function with enhanced controllability in normal operation. The nondormant system which the authors propose is one example of the first notion. This is a system in which a standby safety system is a portion of the normal operation system. An interpretation of the nondormant system via synergetics is made. As an example of the second notion, a PIUS density lock aided with active components is proposed and is discussed

  20. Structural and optical properties of vapor-etched porous GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Smida, A.; Laatar, F. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M., E-mail: mhdhassen@yahoo.fr [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

    2016-08-15

    This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO{sub 3} as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

  1. Structural and optical properties of vapor-etched porous GaAs

    International Nuclear Information System (INIS)

    Smida, A.; Laatar, F.; Hassen, M.; Ezzaouia, H.

    2016-01-01

    This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO 3 as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

  2. Singularities of current-voltage characteristics of GaAs films fabricated by pulsed ions ablation

    International Nuclear Information System (INIS)

    Kabyshev, A.V.; Konusov, F.V.; Lozhnikov, S.N.; Remnev, G.E.; Saltymakov, M.S.

    2009-01-01

    A singularities and advantages of the optical, photoelectric and electrical properties of GaAs in comparison with other available materials for electronics, for example, silicon allow to manufacture on it base the devices having an advanced characteristics. The GaAs for electronics, obtained from the dense ablation plasma, possess some preferences as compared to material manufactured by traditional methods of vacuum deposition. The electrical characteristics of GaAs produced by chemical deposition were extensively studied. Purpose of this work is investigation the current-voltage characteristics of thin films of GaAs, deposited on polycrystalline corundum (polycor) from plasma forming the power ions bunch and determination of the thermal vacuum annealing effect on photoelectric and electrical properties of films. Peculiarities of optical, photoelectric and current-voltage characteristics of films obtained by ions ablation are determined by deposition conditions and resistance of initial target GaAs. The transitions between the states with low- and high conduction were revealed directly after deposition in films having the optical properties similar to amorphous materials and/or after annealing in films with properties similar to initial target GaAs. Behavior of current-voltage characteristics at vacuum annealing correlates with Schottky barrier height and photosensitivity and is accompanies of the transport mechanism change. The stable properties of films are formed at its dark conduction 10 -10 -10 -8 s and after annealing at T an =600-700 K. (authors)

  3. Passive cooling containment study

    International Nuclear Information System (INIS)

    Shin, J.J.; Iotti, R.C.; Wright, R.F.

    1993-01-01

    Pressure and temperature transients of nuclear reactor containment following postulated loss of coolant accident with a coincident station blackout due to total loss of all alternating current power are studied analytically and experimentally for the full scale NPR (New Production Reactor). All the reactor and containment cooling under this condition would rely on the passive cooling system which removes reactor decay heat and provides emergency core and containment cooling. Containment passive cooling for this study takes place in the annulus between containment steel shell and concrete shield building by natural convection air flow and thermal radiation. Various heat transfer coefficients inside annular air space were investigated by running the modified CONTEMPT code CONTEMPT-NPR. In order to verify proper heat transfer coefficient, temperature, heat flux, and velocity profiles were measured inside annular air space of the test facility which is a 24 foot (7.3m) high, steam heated inner cylinder of three foot (.91m) diameter and five and half foot (1.7m) diameter outer cylinder. Comparison of CONTEMPT-NPR and WGOTHIC was done for reduced scale NPR

  4. Fly ash carbon passivation

    Science.gov (United States)

    La Count, Robert B; Baltrus, John P; Kern, Douglas G

    2013-05-14

    A thermal method to passivate the carbon and/or other components in fly ash significantly decreases adsorption. The passivated carbon remains in the fly ash. Heating the fly ash to about 500 and 800 degrees C. under inert gas conditions sharply decreases the amount of surfactant adsorbed by the fly ash recovered after thermal treatment despite the fact that the carbon content remains in the fly ash. Using oxygen and inert gas mixtures, the present invention shows that a thermal treatment to about 500 degrees C. also sharply decreases the surfactant adsorption of the recovered fly ash even though most of the carbon remains intact. Also, thermal treatment to about 800 degrees C. under these same oxidative conditions shows a sharp decrease in surfactant adsorption of the recovered fly ash due to the fact that the carbon has been removed. This experiment simulates the various "carbon burnout" methods and is not a claim in this method. The present invention provides a thermal method of deactivating high carbon fly ash toward adsorption of AEAs while retaining the fly ash carbon. The fly ash can be used, for example, as a partial Portland cement replacement in air-entrained concrete, in conductive and other concretes, and for other applications.

  5. Surface Passivation in Empirical Tight Binding

    OpenAIRE

    He, Yu; Tan, Yaohua; Jiang, Zhengping; Povolotskyi, Michael; Klimeck, Gerhard; Kubis, Tillmann

    2015-01-01

    Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that explicitly includes passivation atoms is limited to passivation with atoms and small molecules only. 2) Method that implicitly incorporates passivation does not distinguish passivation atom types. This work introduces an implicit passivation method that is applicable to any passivation scenario with appropriate parameter...

  6. Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

    Science.gov (United States)

    2010-01-01

    We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

  7. Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100 Surfaces

    Directory of Open Access Journals (Sweden)

    Zhou Lin

    2008-01-01

    Full Text Available Abstract Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100 substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

  8. Passive-solar construction handbook

    Energy Technology Data Exchange (ETDEWEB)

    Levy, E.; Evans, D.; Gardstein, C.

    1981-02-01

    Many of the basic elements of passive solar design are reviewed. Passive solar construction is covered according to system type, each system type discussion including a general discussion of the important design and construction issues which apply to the particular system and case studies illustrating designed and built examples of the system type. The three basic types of passive solar systems discussed are direct gain, thermal storage wall, and attached sunspace. Thermal performance and construction information is presented for typical materials used in passive solar collector components, storage components, and control components. Appended are an overview of analysis methods and a technique for estimating performance. (LEW)

  9. In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors

    Energy Technology Data Exchange (ETDEWEB)

    Akazawa, Masamichi; Hasegawa, Hideki; Jia, Rui [Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Sapporo 060-8628 (Japan)

    2007-04-15

    Detailed properties of the Si interface control layer (Si ICL)-based surface passivation structure are characterized by in-situ X-ray photoelectron spectroscopy (XPS) in an ultra-high vacuum multi-chamber system. Si ICLs were grown by molecular beam epitaxy (MBE) on GaAs and AlGaAs(001) and (111)B surfaces, and were partially converted to SiN{sub x} by nitrogen radical beam. Freshly MBE-grown clean GaAs and AlGaAs surfaces showed strong Fermi level pinning. Large shifts of the surface Fermi level position corresponding to reduction of pinning took place after Si ICL growth, particularly on (111)B surface (around 500 meV). However, subsequent surface nitridation increased pinning again. Then, a significant reduction of pinning was obtained by changing SiN{sub x} to silicon oxynitride by intentional air-exposure and subsequent annealing. This has led to realization of a stable passivation structure with an ultrathin oxynitride/Si ICL structure which prevented subcutaneous oxidation during further device processing under air-exposure. The Si-ICL-based passivation process was applied to surface passivation of quantum wire (QWR) transistors where anomalously large side-gating phenomenon was completely eliminated. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. ITER TASK T252 (1995):Gamma radiation testing of a GaAs operational amplifier for instrument applications

    International Nuclear Information System (INIS)

    Hiemstra, D.

    1996-03-01

    The purpose of this 1995 ITER task was : to build an improved operational amplifier using GaAs MESFET technology, to build a reference voltage subcircuit using GaAs MESFET technology and to investigate the potential of GaAs HBT's to improve the noise performance of the GaAs MESFET operational amplifier. This work addresses the need for instrumentation-grade components to read sensors in an experimental fusion reactor, where the anticipated total dose for a useful service life is 3Grad(GaAs). It is an extension of our 1994 work. 3 tabs., 6 figs

  11. Passive magnetic bearing system

    Science.gov (United States)

    Post, Richard F.

    2014-09-02

    An axial stabilizer for the rotor of a magnetic bearing provides external control of stiffness through switching in external inductances. External control also allows the stabilizer to become a part of a passive/active magnetic bearing system that requires no external source of power and no position sensor. Stabilizers for displacements transverse to the axis of rotation are provided that require only a single cylindrical Halbach array in its operation, and thus are especially suited for use in high rotation speed applications, such as flywheel energy storage systems. The elimination of the need of an inner cylindrical array solves the difficult mechanical problem of supplying support against centrifugal forces for the magnets of that array. Compensation is provided for the temperature variation of the strength of the magnetic fields of the permanent magnets in the levitating magnet arrays.

  12. European vehicle passive safety network

    NARCIS (Netherlands)

    Wismans, J.S.H.M.; Janssen, E.G.

    1999-01-01

    The general objective of the European Vehicle Passive Safety Network is to contribute to the reduction of the number of road traffic victims in Europe by passive safety measures. The aim of the road safety policy of the European Commission is to reduce the annual total of fatalities to 18000 in

  13. Passive films at the nanoscale

    International Nuclear Information System (INIS)

    Maurice, Vincent; Marcus, Philippe

    2012-01-01

    Highlights: ► Nanoscale data on growth, structure and local properties of passive films reviewed. ► Preferential role of defects of passive films on the corrosion resistance emphasized. ► Effect of grain boundaries on local electronic properties shown by new data. ► Use of atomistic modeling to test mechanistic hypotheses illustrated. - Abstract: The nanometer scale chemical and structural aspects of ultrathin oxide passive films providing self-protection against corrosion to metals and alloys in aqueous environments are reviewed. Data on the nucleation and growth of 2D anodic oxide films, details on the atomic structure and nanostructure of 3D passive films, the preferential role of surface step edges in dissolution in the passive state and the preferential role of grain boundaries of the passive films in passivity breakdown are presented. Future perspectives are discussed, and exemplified by new data obtained on the relationship between the nanostructure of oxide passive films and their local electronic properties. Atomistic corrosion modeling by ab initio density functional theory (DFT) is illustrated by the example of interactions of chloride ions with hydroxylated oxide surfaces, including the role of surface step edges. Data obtained on well-defined substrate surfaces with surface analytical techniques are emphasized.

  14. Udviklingen i bilers passive sikkerhed

    DEFF Research Database (Denmark)

    Hels, Tove; Lyckegaard, Allan; Prato, Carlo Giacomo

    man mellem aktiv og passiv sikkerhed, det vil sige faktorer, der nedsætter • risikoen for, at der sker et uheld (aktiv sikkerhed), henholdsvis • graden af alvorlighed, givet at uheldet er sket (passiv sikkerhed). Rapporten begrænser sig til at undersøge, om der kan påvises en generel sammenhæng mellem...

  15. The Passive in Singapore English.

    Science.gov (United States)

    Bao, Zhiming; Wee, Lionel

    1999-01-01

    Presents an analysis of the two passive (or passive-like) constructions in Singapore English which exhibit substrate influence from Malay and Chinese. The paper shows that while substrate languages contribute to the grammar of Singapore English, the continued prestige of standard English exerts normative pressure and mitigates the effect of…

  16. Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

    International Nuclear Information System (INIS)

    Chen Liang; Qian Yun-Sheng; Zhang Yi-Jun; Chang Ben-Kang

    2012-01-01

    Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  17. Antireflection/Passivation Step For Silicon Cell

    Science.gov (United States)

    Crotty, Gerald T.; Kachare, Akaram H.; Daud, Taher

    1988-01-01

    New process excludes usual silicon oxide passivation. Changes in principal electrical parameters during two kinds of processing suggest antireflection treatment almost as effective as oxide treatment in passivating cells. Does so without disadvantages of SiOx passivation.

  18. High temperature GaAs X-ray detectors

    Science.gov (United States)

    Lioliou, G.; Whitaker, M. D. C.; Barnett, A. M.

    2017-12-01

    Two GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 °C to -20 °C. The devices had 10 μm thick i layers with different diameters: 200 μm (D1) and 400 μm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 °C to 0.66 keV at -20 °C for the spectrometer with D1, and from 2.71 keV at 100 °C to 0.71 keV at -20 °C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.

  19. GaAs integrated circuits and heterojunction devices

    Science.gov (United States)

    Fowlis, Colin

    1986-06-01

    The state of the art of GaAs technology in the U.S. as it applies to digital and analog integrated circuits is examined. In a market projection, it is noted that whereas analog ICs now largely dominate the market, in 1994 they will amount to only 39 percent vs. 57 percent for digital ICs. The military segment of the market will remain the largest (42 percent in 1994 vs. 70 percent today). ICs using depletion-mode-only FETs can be constructed in various forms, the closest to production being BFL or buffered FET logic. Schottky diode FET logic - a lower power approach - can reach higher complexities and strong efforts are being made in this direction. Enhancement type devices appear essential to reach LSI and VLSI complexity, but process control is still very difficult; strong efforts are under way, both in the U.S. and in Japan. Heterojunction devices appear very promising, although structures are fairly complex, and special fabrication techniques, such as molecular beam epitaxy and MOCVD, are necessary. High-electron-mobility-transistor (HEMT) devices show significant performance advantages over MESFETs at low temperatures. Initial results of heterojunction bipolar transistor devices show promise for high speed A/D converter applications.

  20. Semiconductor GaAs: electronic paramagnetic resonance new data

    International Nuclear Information System (INIS)

    Benchiguer, T.

    1994-04-01

    The topic of this study was to put to the fore, thanks to our electron spin resonance experiments, one charge transfer process, which was optically induced between the deep donor As + G a and the different acceptors, which were present in the material. We described these processes through a theoretical model, which we named charge transfer model. With this latter, we were able to trace a graph network, representing the As + G a concentration kinetics. Then we verified the compatibility of our model with one transport experiment. One experimental verification of our model were delivered, thanks to neutronic transmutation doping. The following stage was the study of defects, induced by thermal strains, to which the crystal was submitted during the cooling phase. At last we wanted to get round the non solved super hyperfine structure problem for GaAs by studying another III-V material for which she was resolved, namely gallium phosphide. (MML). 150 refs., 72 figs., 16 tabs., 3 annexes

  1. Mechanical response of wall-patterned GaAs surface

    International Nuclear Information System (INIS)

    Le Bourhis, E.; Patriarche, G.

    2005-01-01

    Wall-patterned GaAs surfaces have been elaborated by photolithography and dry etching. Different surfaces were produced in order to change the aspect ratio of the walls formed at the substrate surface. The mechanical behaviour of individual walls was investigated by nanoindentation and the responses were compared to that of a standard bulk reference (flat surface). Deviation from the bulk response is detected in a load range of 1-25 mN depending on the aspect ratio of the walls. A central plastic zone criterion is proposed in view of transmission electron microscopy images of indented walls and allows the prediction of the response deviation of a given wall if its width is known. The mechanical response of the different types of walls is further investigated in terms of stiffness, total penetration of indenter and apparent hardness, and is scanned in relation to the proximity of a wall side. Overall results show that contact stiffness remains almost unaffected by aspect ratio, while penetration drastically increases because of the free sides of the wall as compared to a flat surface (bulk substrate). The application of substrate patterning for optoelectronic devices is discussed in the perspective of eliminating residual dislocations appearing in mismatched structures

  2. Point defects in GaAs and other semiconductors

    International Nuclear Information System (INIS)

    Ehrhart, P.; Karsten, K.; Pillukat, A.

    1993-01-01

    In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4 · 10 19 e - /cm 2 . The irradiated samples were investigated by X-ray Diffraction and optical absorption spectroscopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (V rel = 2--3 atomic volumes) as compared to the As-Frenkel pairs (V rel ∼1 at. vol.). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed

  3. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    Directory of Open Access Journals (Sweden)

    Mudar Ahmed Abdulsattar

    2014-12-01

    Full Text Available Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm-1 compared to experimental 0.035 eV (285.2 cm-1. Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å. Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  4. Modeling of altered layer formation during reactive ion etching of GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Mutzke, A. [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Rai, A., E-mail: Abha.Rai@ipp.mpg.de [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Schneider, R.; Angelin, E.J.; Hippler, R. [Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str.6, D-17489 Greifswald (Germany)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Experimental result showing the preferential sputtering of GaAs (150 keV Ar{sup +} and thermal O on GaAs) during reactive ion beam etching (RIBE) has been reported. Black-Right-Pointing-Pointer A model based on binary collisions (SDTrimSP) is presented to simulate RIBE. Black-Right-Pointing-Pointer The model is used to explain the reported experimental data and also the results by Grigonis and co-workers [1]. - Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam etching (RIBE) of GaAs in the presence of energetic Ar ions and thermal O atoms. It includes the collisional effects, diffusive processes and chemical reactions taking place in the system. The model parameters are fitted using the experimental observations of Grigonis and co-workers [1] and validated with the experimental results obtained during the GaAs ion etching presented in this paper. A detailed analysis is presented to understand the effect of the diffusive processes and the role of O during RIBE of GaAs. It is shown how the presence of damage caused by the energetic Ar coupled with the presence of thermal O opens up chemical reaction channels which eventually leads to the preferential sputtering of Ga observed at the ion etching facility at University of Greifswald.

  5. Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

    International Nuclear Information System (INIS)

    Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

    2010-01-01

    Molecular-Beam Epitaxy growth of multiple In 0.4 Ga 0.6 As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4 Ga 0.6 As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4 Ga 0.6 As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

  6. Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

    Science.gov (United States)

    Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

    2012-06-01

    GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

  7. Paths to light trapping in thin film GaAs solar cells.

    Science.gov (United States)

    Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

    2018-03-19

    It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

  8. Pump-probe studies of travelling coherent longitudinal acoustic phonon oscillations in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Y.; Qi, J.; Tolk, Norman [Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235 (United States); Miller, J. [Naval air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Cho, Y.J.; Liu, X.; Furdyna, J.K. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Shahbazyan, T.V. [Department of Physics, Jackson State University, MS 39217 (United States)

    2008-07-01

    We report comprehensive studies of long-lived oscillations in femtosecond optical pump-probe measurements on GaAs based systems. The oscillations arise from a photo-generated coherent longitudinal acoustic phonon wave at the sample surface, which subsequently travels from the surface into the GaAs substrate, thus providing information on the optical properties of the material as a function of time/depth. Wavelength-dependent studies of the oscillations near the bandgap of GaAs indicate strong correlations to the optical properties of GaAs. We also use the coherent longitudinal acoustic phonon waves to probe a thin buried Ga{sub 0.1}In{sub 0.9}As layers non-invasively. The observed phonon oscillations experience a reduction in amplitude and a phase change at wavelengths near the bandgap of the GaAs, when it passes through the thin Ga{sub x}In{sub 1-x}As layer. The layer depth and thicknesses can be extracted from the oscillation responses. A model has been developed that satisfactorily characterizes the experimental results. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Tchernycheva, M; Harmand, J C; Patriarche, G; Travers, L; Cirlin, G E

    2006-01-01

    Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 deg. C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 deg. C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires

  10. Origin of the suppression in low frequency terahertz conductivity in dilute GaAs nitride and bismide alloys

    DEFF Research Database (Denmark)

    Cocker, Tylor; Lu, Xianfeng; Cooke, David

    We have performed time-resolved terahertz spectroscopy on GaAs1-xBix (x=7%) and observed a low-frequency suppression of the real conductivity previously seen only in dilute GaAs nitrides. We have developed a modified Drude model with a frequency-dependent scattering time that provides excellent...

  11. Disruption of Higher Order DNA Structures in Friedreich's Ataxia (GAA)(n) Repeats by PNA or LNA Targeting

    DEFF Research Database (Denmark)

    Bergquist, Helen; Rocha, Cristina S. J.; Alvarez-Asencio, Ruben

    2016-01-01

    Expansion of (GAA)n repeats in the first intron of the Frataxin gene is associated with reduced mRNA and protein levels and the development of Friedreich’s ataxia. (GAA)n expansions form non-canonical structures, including intramolecular triplex (H-DNA), and R-loops and are associated with epigen...

  12. Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

    NARCIS (Netherlands)

    George, S.D.; Dilna, S.; Prasanth, R.; Radhakrishnan, P.; Vallabhan, C.P.G.; Nampoori, V.P.N.

    2003-01-01

    We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho's theory of the PA effect. The

  13. Experimental studies of the charge limit phenomenon in NEA GaAs photocathodes

    International Nuclear Information System (INIS)

    Tang, H.; Alley, R.K.; Aoyagi, H.; Clendenin, J.E.; Frisch, J.C.; Mulhollan, G.A.; Saez, P.J.; Schultz, D.C.; Turner, J.L.

    1994-06-01

    Negative electron affinity GaAs photocathodes have been in continuous use at SLAC for generating polarized electron beams since early 1992. If the quantum efficiency of a GaAs cathode is below a critical value, the maximum photoemitted charge with photons of energies close to the band gap in a 2-ns pulse is found to be limited by the intrinsic properties of the cathode instead of by the space charge limit. We have studied this novel charge limit phenomenon in a variety of GaAs photocathodes of different structures and doping densities. We find that the charge limit is strongly dependent on the cathode's quantum efficiency and the extraction electric field, and to a lesser degree on the excitation laser wavelength. In addition, we show that the temporal behavior of the charge limit depends critically on the doping density

  14. Nanoscale footprints of self-running gallium droplets on GaAs surface.

    Directory of Open Access Journals (Sweden)

    Jiang Wu

    Full Text Available In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001 surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems.

  15. Schottky barrier measurements on individual GaAs nanowires by X-ray photoemission microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Di Mario, Lorenzo [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Turchini, Stefano, E-mail: stefano.turchini@cnr.it [ISM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Zamborlini, Giovanni; Feyer, Vitaly [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Tian, Lin [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Schneider, Claus M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CENIDE), Universität Duisburg-Essen, D-47048 Duisburg (Germany); Rubini, Silvia [IOM-CNR, TASC Laboratory, Basovizza 34149, Trieste (Italy); Martelli, Faustino, E-mail: faustino.martelli@cnr.it [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy)

    2016-11-15

    Highlights: • The Schottky barrier at the interface between Cu and GaAs nanowires was measured. • Individual nanowires were investigated by X-ray Photoemission Microscopy. • The Schottky barrier at different positions along the nanowire was evaluated. - Abstract: We present measurements of the Schottky barrier height on individual GaAs nanowires by means of x-ray photoelectron emission microscopy (XPEEM). Values of 0.73 and 0.51 eV, averaged over the entire wires, were measured on Cu-covered n-doped and p-doped GaAs nanowires, respectively, in agreement with results obtained on bulk material. Our measurements show that XPEEM can become a feasible and reliable investigation tool of interface formation at the nanoscale and pave the way towards the study of size-dependent effects on semiconductor-based structures.

  16. Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

    International Nuclear Information System (INIS)

    Lajnef, M.; Chtourou, R.; Ezzaouia, H.

    2010-01-01

    GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height φ b0 parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

  17. Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Lajnef, M., E-mail: Mohamed.lajnef@yahoo.fr [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R.; Ezzaouia, H. [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2010-03-01

    GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height {phi}{sub b0} parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

  18. Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

    International Nuclear Information System (INIS)

    Bietti, S; Somaschini, C; Esposito, L; Sanguinetti, S; Frigeri, C; Fedorov, A; Geelhaar, L

    2014-01-01

    We present the growth of self-assisted GaAs nanowires (NWs) with selectable number density on bare Si(1 1 1), not covered by the silicon oxide. We determine the number density of the NWs by initially self-assembling GaAs islands on whose top a single NW is nucleated. The number density of the initial GaAs base islands can be tuned by droplet epitaxy and the same degree of control is then transferred to the NWs. This procedure is completely performed during a single growth in an ultra-high vacuum environment and requires neither an oxide layer covering the substrate, nor any pre-patterning technique. (paper)

  19. Electronic structure of GaAs with InAs (001) monolayer

    International Nuclear Information System (INIS)

    Tit, N.; Peressi, M.

    1995-04-01

    The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

  20. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

    International Nuclear Information System (INIS)

    Williams, R.S.

    1982-01-01

    Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

  1. Self-assembled colloidal PbS quantum dots on GaAs substrates

    International Nuclear Information System (INIS)

    Lue, Wei; Yamada, Fumihiko; Kamiya, Itaru

    2010-01-01

    We report the fabrication and analysis of self-assembled monolayer and bilayer films of colloidal PbS quantum dots (QDs) on GaAs (001) substrates. 1,6-hexanedithiol is used as link molecule between QDs and GaAs substrates. Atomic force microscopy (AFM) and photoluminescence (PL) measurements confirm the formation of PbS QD film on GaAs. For the monolayer PbS QD film, the temperature-dependent PL shows a feature typical of close-packed film. For the bilayer PbS QD film fabricated from two different mean-sized PbS QDs, we find that the stacking sequence of QDs with different size affects the quantum yield and emission wavelength of the film.

  2. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

    International Nuclear Information System (INIS)

    Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

    2014-01-01

    We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4 A 2 ( 4 F) → 4 T 1 ( 4 G) and 4 T 1 ( 4 G) → 6 A 1 ( 6 S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs

  3. Optimization of the GaAs et GaAs/Si annealing using halogen lamp flashes

    International Nuclear Information System (INIS)

    Blanck, H.

    1989-01-01

    The aim of the work is to check whether the flash annealing of GaAs and GaAs/Si, using halogen lamps, allows an improvement in the results obtained by usual methods. The electrical activation, defects behavior and results uniformity are studied. The results on the activation and diffusion of implanted impurities are shown to be equivalent to those obtained with classical annealing methods. However, residual impurities (or defects) diffusion phenomena are restrained by the flash annealing technique. The Hall effect cartographic measurements showed an improvement of the uniformity of the implanted coating surface resistance. Flash annealing is a suitable method for the Si activation in GaAs. It allows an improvement of the GaAs results obtained with standard techniques, as well as the formation, by means of ion implantation, of active zones in the GaAs/Si layers [fr

  4. An ultra-high-speed direct digital frequency synthesizer implemented in GaAs HBT technology

    International Nuclear Information System (INIS)

    Chen Gaopeng; Wu Danyu; Jin Zhi; Liu Xinyu

    2010-01-01

    This paper presents a 10-GHz 8-bit direct digital synthesizer (DDS) microwave monolithic integrated circuit implemented in 1 μm GaAs HBT technology. The DDS takes a double-edge-trigger (DET) 8-stage pipeline accumulator with sine-weighted DAC-based ROM-less architecture, which can maximize the utilization ratio of the GaAs HBT's high-speed potential. With an output frequency up to 5 GHz, the DDS gives an average spurious free dynamic range of 23.24 dBc through the first Nyquist band, and consumes 2.4 W of DC power from a single -4.6 V DC supply. Using 1651 GaAs HBT transistors, the total area of the DDS chip is 2.4 x 2.0 mm 2 . (semiconductor integrated circuits)

  5. Performance of Series Connected GaAs Photovoltaic Converters under Multimode Optical Fiber Illumination

    Directory of Open Access Journals (Sweden)

    Tiqiang Shan

    2014-01-01

    Full Text Available In many military and industrial applications, GaAs photovoltaic (PV converters are connected in series in order to generate the required voltage compatible with most common electronics. Multimode optical fibers are usually used to carry high-intensity laser and illuminate the series connected GaAs PV converters in real time. However, multimode optical fiber illumination has a speckled intensity pattern. The series connected PV array is extremely sensitive to nonuniform illumination; its performance is limited severely by the converter that is illuminated the least. This paper quantifies the effects of multimode optical fiber illumination on the performance of series connected GaAs PV converters, analyzes the loss mechanisms due to speckles, and discusses the maximum illumination efficiency. In order to describe the illumination dependent behavior detailedly, modeling of the series connected PV array is accomplished based on the equivalent circuit for PV cells. Finally, a series of experiments are carried out to demonstrate the theory analysis.

  6. Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, R., E-mail: rosnita@utm.my; Othaman, Z., E-mail: zulothaman@gmail.com; Ibrahim, Z., E-mail: zuhairi@utm.my; Sakrani, S., E-mail: samsudi3@yahoo.com [Faculty of Science, UniversitiTeknologi Malaysia, 81310 UTM, Johor (Malaysia); Wahab, Y., E-mail: wyussof@gmail.com [Razak School, UniversitiTeknologi Malaysia, 54100 Kuala Lumpur (Malaysia)

    2016-04-19

    In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

  7. Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

    Science.gov (United States)

    Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

    1986-01-01

    A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

  8. Neutron-damaged GaAs detectors for use in a Compton spectrometer

    International Nuclear Information System (INIS)

    Kammeraad, J.E.; Sale, K.E.; Wang, C.L.; Baltrusaitis, R.M.

    1992-01-01

    Detectors made of GaAs are being studies for use on the focal plane of a Compton spectrometer which measures 1-MeV to 25-MeV gamma rays with high energy resolution (1% or 100 keV, whichever is greater) and 200-ps time resolution. The detectors are GaAs chips that have been neutron-damaged to improve the time response. The detectors will be used to measure fast transient signals in the current mode. The properties of various GaAs detector configurations are being studied by bombarding sample detectors with short pulses of 4-MeV to 16-MeV electrons at the Linac Facility at EG ampersand G Energy Measurements, Inc., Santa Barbara Operations. Measurements of detector sensitivity and impulse response versus detector bias, thickness, and electron beam energy and intensity have been performed and are presented. 5 refs

  9. Investigations on liquid phase electroepitaxial growth kinetics of GaAs

    International Nuclear Information System (INIS)

    Mouleeswaran, D.; Dhanasekaran, R.

    2004-01-01

    This paper presents a model based on solving a two-dimensional diffusion equation incorporating the electromigration effect by numerical simulation method corresponding to liquid phase electroepitaxial (LPEE) growth of GaAs, whose growth is limited by diffusion and electro migration of solute species. Using the numerical simulation method, the concentration profiles of As in Ga rich solution during the electroepitaxial growth of GaAs have been constructed in front of the growing crystal interface. Using the concentration gradient at the interface, the growth rate and thickness of the epitaxial layer of GaAs have been determined for different experimental growth conditions. The proposed model is based on the assumption that there is no convection in the solution. The results are discussed in detail

  10. Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yan Dawei; Wu Weidong; Zhang Hong; Wang Xuemin; Zhang Hongliang; Zhang Weibin; Xiong Zhengwei; Wang Yuying; Shen Changle; Peng Liping; Han Shangjun; Zhou Minjie

    2011-01-01

    In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.

  11. French concepts of ''passive safety''

    International Nuclear Information System (INIS)

    Dennielou, Y.; Serret, M.

    1990-01-01

    N 4 model, the French 1400 MW PWR of the 90's, exhibits many advanced features. As far as safety is concerned, the fully computerized control room design takes advantage of the operating experience feedback and largely improves the man machine interface. New post-accident procedures have been developed (the so-called ''physical states oriented procedures''). A complete consistent set of ''Fundamental Safety Rules'' have been issued. This however doesn't imply any significant modification of standard PWR with regard to the passive aspects of safety systems or functions. Nevertheless, traditional PWR safety systems largely use passive aspects: natural circulation, reactivity coefficients, gravity driven control rods, injection accumulators, so on. Moreover, probability calculations allow for comparison between the respective contributions of passive and of active failures. In the near future, eventual options of future French PWRs to be commissioned after 2000 will be evaluated; simplification, passive and forgiving aspects of safety systems will be thoroughly considered. (author)

  12. Effectiveness of passive alcohol sensors

    Science.gov (United States)

    1996-03-01

    Author's abstract: The purpose of this study was to evaluate the effectiveness of passive alcohol sensors for youth alcohol enforcement conducted as part of normal or typical police operations. Three municipal police departments of 100 or more sworn ...

  13. Passive heat removal in CANDU

    International Nuclear Information System (INIS)

    Hart, R.S.

    1997-01-01

    CANDU has a tradition of incorporating passive systems and passive components whenever they are shown to offer performance that is equal to or better than that of active systems, and to be economic. Examples include the two independent shutdown systems that employ gravity and stored energy respectively, the dousing subsystem of the CANDU 6 containment system, and the ability of the moderator to cool the fuel in the event that all coolant is lost from the fuel channels. CANDU 9 continues this tradition, incorporating a reserve water system (RWS) that increases the inventory of water in the reactor building and profiles a passive source of makeup water and/or heat sinks to various key process systems. The key component of the CANDU 9 reserve water system is a large (2500 cubic metres) water tank located at a high elevation in the reactor building. The reserve water system, while incorporating the recovery system functions, and the non-dousing functions of the dousing tank in CANDU 6, embraces other key systems to significantly extend the passive makeup/heat sink capability. The capabilities of the reserve water system include makeup to the steam generators secondary side if all other sources of water are lost; makeup to the heat transport system in the event of a leak in excess of the D 2 O makeup system capability; makeup to the moderator in the event of a moderator leak when the moderator heat sink is required; makeup to the emergency core cooling (ECC) system to assure NPSH to the ECC pumps during a loss of coolant accident (LOCA), and provision of a passive heat sink for the shield cooling system. Other passive designs are now being developed by AECL. These will be incorporated in future CANDU plants when their performance has been fully proven. This paper reviews the passive heat removal systems and features of current CANDU plants and the CANDU 9, and briefly reviews some of the passive heat removal concepts now being developed. (author)

  14. Key issues for passive safety

    International Nuclear Information System (INIS)

    Hayns, M.R.

    1996-01-01

    The paper represents a summary of the introductory presentation made at this Advisory Group Meeting on the Technical Feasibility and Reliability of Passive Safety Systems. It was intended as an overview of our views on what are the key issues and what are the technical problems which might dominate any future developments of passive safety systems. It is, therefore, not a ''review paper'' as such and only record the highlights. (author)

  15. Key issues for passive safety

    Energy Technology Data Exchange (ETDEWEB)

    Hayns, M R [AEA Technology, Harwell, Didcot (United Kingdom). European Institutions; Hicken, E F [Forschungszentrum Juelich GmbH (Germany)

    1996-12-01

    The paper represents a summary of the introductory presentation made at this Advisory Group Meeting on the Technical Feasibility and Reliability of Passive Safety Systems. It was intended as an overview of our views on what are the key issues and what are the technical problems which might dominate any future developments of passive safety systems. It is, therefore, not a ``review paper`` as such and only record the highlights. (author).

  16. Si and gaas pixel detectors for medical imaging applications

    International Nuclear Information System (INIS)

    Bisogni, M. G.

    2001-01-01

    As the use of digital radiographic equipment in the morphological imaging field is becoming the more and more diffuse, the research of new and more performing devices from public institutions and industrial companies is in constant progress. Most of these devices are based on solid-state detectors as X-ray sensors. Semiconductor pixel detectors, originally developed in the high energy physics environment, have been then proposed as digital detector for medical imaging applications. In this paper a digital single photon counting device, based on silicon and GaAs pixel detector, is presented. The detector is a thin slab of semiconductor crystal where an array of 64 by 64 square pixels, 170- m side, has been built on one side. The data read-out is performed by a VLSI integrated circuit named Photon Counting Chip (PCC), developed within the MEDIPIX collaboration. Each chip cell geometrically matches the sensor pixel. It contains a charge preamplifier, a threshold comparator and a 15 bits pseudo-random counter and it is coupled to the detector by means of bump bonding. Most important advantages of such system, with respect to a traditional X-rays film/screen device, are the wider linear dynamic range (3x104) and the higher performance in terms of MTF and DQE. Besides the single photon counting architecture allows to detect image contrasts lower than 3%. Electronics read-out performance as well as imaging capabilities of the digital device will be presented. Images of mammographic phantoms acquired with a standard Mammographic tube will be compared with radiographs obtained with traditional film/screen systems

  17. Analysis of GAA/TTC DNA triplexes using nuclear magnetic resonance and electrospray ionization mass spectrometry.

    Science.gov (United States)

    Mariappan, S V Santhana; Cheng, Xun; van Breemen, Richard B; Silks, Louis A; Gupta, Goutam

    2004-11-15

    The formation of a GAA/TTC DNA triplex has been implicated in Friedreich's ataxia. The destabilization of GAA/TTC DNA triplexes either by pH or by binding to appropriate ligands was analyzed by nuclear magnetic resonance (NMR) and positive-ion electrospray mass spectrometry. The triplexes and duplexes were identified by changes in the NMR chemical shifts of H8, H1, H4, 15N7, and 15N4. The lowest pH at which the duplex is detectable depends upon the overall stability and the relative number of Hoogsteen C composite function G to T composite function A basepairs. A melting pH (pHm) of 7.6 was observed for the destabilization of the (GAA)2T4(TTC)2T4(CTT)2 triplex to the corresponding Watson-Crick duplex and the T4(CTT)2 overhang. The mass spectrometric analyses of (TTC)6.(GAA)6 composite function(TTC)6 triplex detected ions due to both triplex and single-stranded oligonucleotides under acidic conditions. The triplex ions disappeared completely at alkaline pH. Duplex and single strands were detectable only at neutral and alkaline pH values. Mass spectrometric analyses also showed that minor groove-binding ligands berenil, netropsin, and distamycin and the intercalating ligand acridine orange destabilize the (TTC)6.(GAA)6 composite function (TTC)6 triplex. These NMR and mass spectrometric methods may function as screening assays for the discovery of agents that destabilize GAA/TTC triplexes and as general methods for the characterization of structure, dynamics, and stability of DNA and DNA-ligand complexes.

  18. Passive vapor extraction feasibility study

    International Nuclear Information System (INIS)

    Rohay, V.J.

    1994-01-01

    Demonstration of a passive vapor extraction remediation system is planned for sites in the 200 West Area used in the past for the disposal of waste liquids containing carbon tetrachloride. The passive vapor extraction units will consist of a 4-in.-diameter pipe, a check valve, a canister filled with granular activated carbon, and a wind turbine. The check valve will prevent inflow of air that otherwise would dilute the soil gas and make its subsequent extraction less efficient. The granular activated carbon is used to adsorb the carbon tetrachloride from the air. The wind turbine enhances extraction rates on windy days. Passive vapor extraction units will be designed and operated to meet all applicable or relevant and appropriate requirements. Based on a cost analysis, passive vapor extraction was found to be a cost-effective method for remediation of soils containing lower concentrations of volatile contaminants. Passive vapor extraction used on wells that average 10-stdft 3 /min air flow rates was found to be more cost effective than active vapor extraction for concentrations below 500 parts per million by volume (ppm) of carbon tetrachloride. For wells that average 5-stdft 3 /min air flow rates, passive vapor extraction is more cost effective below 100 ppm

  19. Modeling the effect of deep impurity ionization on GaAs photoconductive switches

    Energy Technology Data Exchange (ETDEWEB)

    Yee, J.H.; Khanaka, G.H.; Druce, R.L.; Pocha, M.D.

    1992-01-01

    The ionization coefficient of deep traps in GaAs is determined from a gas breakdown model together with the recent experimental data obtained at LLNL (Lawrence Livermore National Laboratory) and Boeing. Using this coefficient in our nonlinear device transport code, we have investigated theoretically the nonlinear switching phenomena in GaAs devices. The results obtained from our investigations show that if we take into consideration the effect of the field ionization of the deep traps, we can show how the Lock-On'' phenomena could occur in the device.

  20. Modeling the effect of deep impurity ionization on GaAs photoconductive switches

    Energy Technology Data Exchange (ETDEWEB)

    Yee, J.H.; Khanaka, G.H.; Druce, R.L.; Pocha, M.D.

    1992-01-01

    The ionization coefficient of deep traps in GaAs is determined from a gas breakdown model together with the recent experimental data obtained at LLNL (Lawrence Livermore National Laboratory) and Boeing. Using this coefficient in our nonlinear device transport code, we have investigated theoretically the nonlinear switching phenomena in GaAs devices. The results obtained from our investigations show that if we take into consideration the effect of the field ionization of the deep traps, we can show how the ``Lock-On`` phenomena could occur in the device.

  1. Pseudo-Rhombus-Shaped Subwavelength Crossed Gratings of GaAs for Broadband Antireflection

    International Nuclear Information System (INIS)

    Chen Xi; Zhang Jing; Song Guo-Feng; Chen Liang-Hui; Fan Zhong-Chao

    2010-01-01

    Holographic lithography coupled with the nonlinear response of photoresist to the exposure is adopted to fabricate porous photoresist (PR) mask. Conventional dot PR mask is also generated, and both patterns are transferred into a underlying GaAs substrate by the optimal dry etching process to obtain tapered subwavelength crossed gratings (SWCGs) to mimic the moth-eye structure. In comparison of the experiment and simulation, the closely-packed pseudo-rhombus-shaped GaAs SWCGs resulting from the porous mask outperforms the conical counterpart which comes from the dot mask, and achieves a reported lowest mean spectral reflectance of 1.1%. (fundamental areas of phenomenology(including applications))

  2. Electrical properties of Ga ion beam implanted GaAs epilayer

    International Nuclear Information System (INIS)

    Hirayama, Yoshiro; Okamoto, Hiroshi

    1985-01-01

    Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n + and p + GaAs epilayers. For originally n + epilayers, this resistivity enhancement is maintained after annealing as high as 800 deg C. However this enhancement disappears after annealing at above 650 deg C for p + epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 μm or less, and is attractive for a device fabrication process to electrically isolate integrated elements. (author)

  3. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku , Saitama 338-8570 (Japan); Mochizuki, Toshimitsu; Yoshita, Masahiro; Akiyama, Hidefumi [Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Kuboya, Shigeyuki; Onabe, Kentaro [Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Katayama, Ryuji [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2013-12-04

    We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

  4. Plasma treatment of porous GaAs surface formed by electrochemical etching method: Characterization and properties

    International Nuclear Information System (INIS)

    Saloum, S.; Naddaf, M.

    2010-01-01

    Porous GaAs samples were formed by electrochemical anodic etching of Zn doped p-type GaAs (100) wafers at different etching parameters (time, mode of applied voltage or current and electrolyte). The effect of etching parameters and plasma surface treatment on the optical properties of the prepared sample has been investigated by using room temperature photoluminescence (PL), Raman spectroscopy and reflectance spectroscopic measurements in the range (400-800 nm). The surface morphological changes were studied by using atomic force microscope. (author)

  5. Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

    DEFF Research Database (Denmark)

    Izadpanah, S.H; Jeppsson, B; Jeppesen, Palle

    1974-01-01

    Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.......Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance....

  6. X-ray diffraction study on pressure-induced phase transformation in nanocrystalline GaAs

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Olsen, J. S.; Gerward, Leif

    2002-01-01

    We have shown that the onset and transition pressures of the GaAs I --> II transition are 17 GPa and 20 GPa, respectively, for both bulk and nanophase material. The observed gradual change in resistivity of nanophase GaAs,at the semiconductor-to-metal transition is explained by the two-component ......We have shown that the onset and transition pressures of the GaAs I --> II transition are 17 GPa and 20 GPa, respectively, for both bulk and nanophase material. The observed gradual change in resistivity of nanophase GaAs,at the semiconductor-to-metal transition is explained by the two...

  7. Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

    International Nuclear Information System (INIS)

    Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

    1990-01-01

    Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

  8. Pulse GaAs field transistor amplifier with subnanosecond time transient

    International Nuclear Information System (INIS)

    Sidnev, A.N.

    1987-01-01

    Pulse amplifier on fast field effect GaAs transistors with Schottky barrier is described. The amplifier contains four cascades, the first three of which are made on combined transistors on the common-drain circuit. The last cascade is made on high-power field effect GaAs transistor for coordination with 50 ohm load. The amplifier operates within the range of input signals from 0.5 up to 100 mV with repetition frequency up to 16 Hz, The gain of the amplifier is ≅ 20 dB. The setting time at output pulses amplitude up to 1 V constitutes ∼ 0.2 ns

  9. Modeling and Design of Graphene GaAs Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    Yawei Kuang

    2015-01-01

    Full Text Available Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work function and transmittance, and n-type doping concentration in GaAs. The results show that the most effective region for photo photogenerated carriers locates very close to the interface under light illumination. Comprehensive technological design for junction yields a significant improvement of power conversion efficiency from 0.772% to 2.218%. These results are in good agreement with the reported experimental work.

  10. Polarity influence on the indentation punching of thin {111} GaAs foils at elevated temperatures

    International Nuclear Information System (INIS)

    Patriarche, G; Largeau, L; Riviere, J P; Bourhis, E Le

    2005-01-01

    Thin {111} GaAs substrates were deformed by a Vickers indenter at 350 deg. C-370 deg. C under loads ranging between 0.4 and 1.9 N. Optical microscopy and interferometry were used to observe the indented and opposite faces of the thin foils and hence to investigate the plastic flow through the samples. Attention was paid to the polarity (A or B) of the specimen surface, as GaAs is known to show a large difference between α and β dislocations mobilities. A model considering the influence of polarity is proposed to describe the material flow throughout thin samples

  11. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    International Nuclear Information System (INIS)

    Nemcsics, A.

    2005-01-01

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed

  12. Temperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001)

    International Nuclear Information System (INIS)

    Tadayyon-Eslami, T.; Phaneuf, R. J.; Kan, H.-C.; Calhoun, L. C.

    2006-01-01

    We observe a dramatic change in the unstable growth mode during GaAs molecular beam epitaxy on patterned GaAs(001) as the temperature is lowered through approximately 540 deg. C, roughly coincident with the preroughening temperature. Observations of the As 2 flux dependence, however, rule out thermodynamic preroughening as driving the growth mode change. Similar observations rule out the change in surface reconstruction as the cause. Instead, we find evidence that the change in the unstable growth mode can be explained by a competition between the decreased adatom collection rate on small terraces and a small anisotropic barrier to adatom diffusion downward across step bunches

  13. Dual transimpedance amplifier for 43 Gbps applications

    NARCIS (Netherlands)

    Wanum, M. van; Graaf, M.W. van der; Hoogland, J.A.H.; Heijningen, M. van

    2002-01-01

    A 3-stage dual TransImpedance Ampffier (TIA) on one 2x7.8 mm2 GaAs chip with 0.2 pm pHEMT technologt has been designed for fiberoptic communication applications. It uses cascode connected common source FETs in a Constant-K configuration. The operating frequency ranges from DC to 3 5 GHz, The TIA is

  14. Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Balderas-Navarro, R.E. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Facultad de Ciencias, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico)

    2008-07-01

    Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E{sub 1} optical transition as a probe. We follow the kinetics of the deposition of GaAs and In{sub 0.3}Ga{sub 0.7}As on GaAs(001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As{sub 4} or As{sub 2} flux pressure of 5 x 10{sup -6} Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs(001)

    International Nuclear Information System (INIS)

    Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F.; Balderas-Navarro, R.E.

    2008-01-01

    Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E 1 optical transition as a probe. We follow the kinetics of the deposition of GaAs and In 0.3 Ga 0.7 As on GaAs(001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As 4 or As 2 flux pressure of 5 x 10 -6 Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Materials for passively safe reactors

    International Nuclear Information System (INIS)

    Simnad, T.

    1993-01-01

    Future nuclear power capacity will be based on reactor designs that include passive safety features if recent progress in advanced nuclear power developments is realized. There is a high potential for nuclear systems that are smaller and easier to operate than the current generation of reactors, especially when passive or intrinsic characteristics are applied to provide inherent stability of the chain reaction and to minimize the burden on equipment and operating personnel. Taylor, has listed the following common generic technical features as the most important goals for the principal reactor development systems: passive stability, simplification, ruggedness, case of operation, and modularity. Economic competitiveness also depends on standardization and assurance of licensing. The performance of passively safe reactors will be greatly influenced by the successful development of advanced fuels and materials that will provide lower fuel-cycle costs. A dozen new designs of advanced power reactors have been described recently, covering a wide spectrum of reactor types, including pressurized water reactors, boiling water reactors, heavy-water reactors, modular high-temperature gas-cooled reactors (MHTGRs), and fast breeder reactors. These new designs address the need for passive safety features as well as the requirement of economic competitiveness

  17. Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

    Science.gov (United States)

    Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

    2018-02-01

    Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

  18. GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

    Energy Technology Data Exchange (ETDEWEB)

    Chernykh, S.V., E-mail: chsv_84@mail.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Chernykh, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Didenko, S.I.; Baryshnikov, F.M. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Burtebayev, N. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan); Britvich, G.I. [Institute of High Energy Physics, Protvino, Moscow region (Russian Federation); Chubenko, A.P. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Guly, V.G.; Glybin, Yu.N. [LLC “SNIIP Plus”, Moscow (Russian Federation); Zholdybayev, T.K.; Burtebayeva, J.T.; Nassurlla, M. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-02-11

    For the first time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm{sup 2} and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm{sup 2} detector) and 15.5 keV (for 80 mm{sup 2} detector) on the 5.499 MeV line of {sup 238}Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a fluctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. - Highlights: • VPE GaAs particle detectors with an active area of 25 and 80 mm{sup 2} were fabricated. • 120 Å ultra-thin Pt Schottky barrier was used as a rectifying contact. • The obtained FWHM of 14.2 keV ({sup 238}Pu) is at the level of Si spectrometric detectors. • Various components of the total energy resolution were analyzed. • It was shown that obtained energy resolution is close to its limit for VPE GaAs.

  19. Annealing of proton-damaged GaAs and 1/f noise

    NARCIS (Netherlands)

    Chen, X.Y.; Folter, de L.C.

    1997-01-01

    GaAs layers were grown by MBE. The layers were then damaged by 3 MeV proton irradiation and later annealed. We performed Hall effect and low-frequency noise measurements at temperatures between 77 K and 300 K after each step. Several generation - recombination noise components created by proton

  20. Modified energetics and growth kinetics on H-terminated GaAs (110)

    International Nuclear Information System (INIS)

    Galiana, B.; Benedicto, M.; Díez-Merino, L.; Tejedor, P.; Lorbek, S.; Hlawacek, G.; Teichert, C.

    2013-01-01

    Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As 4 , has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å 2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As 4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed

  1. Enhancement of conductance of GaAs sub-microwires under external stimuli

    Science.gov (United States)

    Qu, Xianlin; Deng, Qingsong; Zheng, Kun

    2018-03-01

    Semiconductors with one dimension on the micro-nanometer scale have many unique physical properties that are remarkably different from those of their bulk counterparts. Moreover, changes in the external field will further modulate the properties of the semiconductor micro-nanomaterials. In this study, we used focused ion beam technology to prepare freestanding ⟨111⟩-oriented GaAs sub-microwires from a GaAs substrate. The effects of laser irradiation and bending or buckling deformation induced by compression on the electrical transport properties of an individual GaAs sub-microwire were studied. The experimental results indicate that both laser irradiation and bending deformation can enhance their electrical transport properties, the laser irradiation resulted in a conductance enhancement of ˜30% compared to the result with no irradiation, and in addition, bending deformation changed the conductance by as much as ˜180% when the average strain was approximately 1%. The corresponding mechanisms are also discussed. This study provides beneficial insight into the fabrication of electronic and optoelectronic devices based on GaAs micro/nano-wires.

  2. Etching of GaAs substrates to create As-rich surface

    Indian Academy of Sciences (India)

    WINTEC

    during the manipulations of the substrate after the chemi- cal etching process. ... using the four techniques described in table 1 and for an. *Author for ... Etching of GaAs substrates to create As-rich surface. 563. Table 1. Treatment procedures used. Treatment. Techniques. 1st stage. 2nd stage. 3rd stage. 4th stage. 1. Treated ...

  3. Variations in first principles calculated defect energies in GaAs and ...

    Indian Academy of Sciences (India)

    Keywords. Ab initio calculations; semi-insulating GaAs; point defects. ... We are focusing on gallium arsenide. .... gallium vacancy in S & L, P et al and N & Z will exist in triple ... gallium antisite defect that include relaxation, a negative. U-effect is ...

  4. 1 GHz GaAs Buck Converter for High Power Amplifier Modulation Applications

    NARCIS (Netherlands)

    Busking, E.B.; Hek, A.P. de; Vliet, F.E. van

    2012-01-01

    A fully integrated 1 GHz buck converter output stage, including on-chip inductor and DC output filtering has been realized, in a standard high-voltage breakdown GaAs MMIC technology. This is a significant step forward in designing highspeed power control of supply-modulated HPAs (high power

  5. Spin-Relaxation Anisotropy in a GaAs Quantum Dot

    NARCIS (Netherlands)

    Scarlino, P.; Kawakami, E.; Stano, P.; Shafiei, M.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2014-01-01

    We report that the electron spin-relaxation time T1 in a GaAs quantum dot with a spin-1/2 ground state has a 180° periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots as being due to the interplay of Rashba and Dresselhaus spin orbit

  6. Spin-Dephasing Anisotropy for Electrons in a Diffusive Quasi-1D GaAs Wire

    NARCIS (Netherlands)

    Liu, J.; Last, T.; Koop, E. J.; Denega, S.; van Wees, B. J.; van der Wal, C. H.

    We present a numerical study of dephasing of electron spin ensembles in a diffusive quasi-one-dimensional GaAs wire due to the D'yakonov-Perel' spin-dephasing mechanism. For widths of the wire below the spin precession length and for equal strength of Rashba and linear Dresselhaus spin-orbit fields

  7. Accelerated GaAs growth through MOVPE for low-cost PV applications

    Science.gov (United States)

    Ubukata, Akinori; Sodabanlu, Hassanet; Watanabe, Kentaroh; Koseki, Shuichi; Yano, Yoshiki; Tabuchi, Toshiya; Sugaya, Takeyoshi; Matsumoto, Koh; Nakano, Yoshiaki; Sugiyama, Masakazu

    2018-05-01

    The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90 μm/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70 μm/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80 μm/h. The conversion efficiency of the cell grown at 80 μm/h was comparable to that of the 20 μm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.

  8. Electric field effect of GaAs monolayer from first principles

    Directory of Open Access Journals (Sweden)

    Jiongyao Wu

    2017-03-01

    Full Text Available Using first-principle calculations, we investigate two-dimensional (2D honeycomb monolayer structures composed of group III-V binary elements. It is found that such compound like GaAs should have a buckled structure which is more stable than graphene-like flat structure. This results a polar system with out-of-plane dipoles arising from the non-planar structure. Here, we optimized GaAs monolayer structure, then calculated the electronic band structure and the change of buckling height under external electric field within density functional theory using generalized gradient approximation method. We found that the band gap would change proportionally with the electric field magnitude. When the spin-orbit coupling (SOC is considered, we revealed fine spin-splitting at different points in the reciprocal space. Furthermore, the valence and conduction bands spin-splitting energies due to SOC at the K point of buckled GaAs monolayers are found to be weakly dependent on the electric field strength. Finally electric field effects on the spin texture and second harmonic generation are discussed. The present work sheds light on the control of physical properties of GaAs monolayer by the applied electric field.

  9. Measurement and model of the infrared two-photon emission spectrum of GaAs.

    Science.gov (United States)

    Hayat, Alex; Ginzburg, Pavel; Orenstein, Meir

    2009-07-10

    Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.

  10. Modified energetics and growth kinetics on H-terminated GaAs (110)

    Energy Technology Data Exchange (ETDEWEB)

    Galiana, B. [Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Departamento de Física, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Madrid (Spain); Benedicto, M.; Díez-Merino, L.; Tejedor, P. [Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Lorbek, S.; Hlawacek, G.; Teichert, C. [Institut für Physik, Montanuniversität Leoben, Franz Josef St., 18A-8700 Leoben (Austria)

    2013-10-28

    Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As{sub 4}, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å{sup 2} measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As{sub 4} molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

  11. Surface segregation and the Al problem in GaAs quantum wells

    Science.gov (United States)

    Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

    2018-03-01

    Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

  12. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

    Science.gov (United States)

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2015-09-16

    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

  13. Radiation damages and electro-conductive characteristics of Neutron-Transmutation-Doped GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Kuriyama, Kazuo; Sato, Masataka; Sakai, Kiyohiro [Hosei Univ., Koganei, Tokyo (Japan). Coll. of Engineering; Okada, Moritami

    1996-04-01

    Neutron Transmutation Doping (NTD) method made it possible to do homogeneous doping of impurities and to easily control the doping level. Thus, the method has been put into practice for some materials such as silicon. Here, the annealing behavior of anti-site defects generated in neutron-irradiated GaAs was studied. Electric activations of NTD-impurities were started around 550degC in P1 and P2 radiation fields, which were coincident with the beginning of extinction of electron trapping which was caused by anti-site defects due to fast neutron radiation. The electric resistivities of GaAs in neutron radiation fields; P1, P2 and P3 changed depending with the annealing temperature. The electric resistivities of GaAs in P1 and P2 fields indicate the presence of hopping conduction through radiation damages. The resistance of GaAs irradiated in P1 was smaller by nearly 2 orders than that of the untreated control. Further, the electric activation process for NTD-impurities was investigated using ESR and Raman spectroscopy. (M.N.)

  14. Promotion effect of monovalent metals (K and Cs) on the GaAs (110) surface oxidation

    International Nuclear Information System (INIS)

    Valeri, S.; Sberveglieri, P.; Angeli, E.

    1987-01-01

    The effect of thin (∼ 1 monolayer) overlayers of low electronegativity metals (Cs and K) on the RT oxidation behaviour of GaAs(110) cleavage surface is studied. This study was with Auger and Photoemission spectroscopies. Attention has been focused on the core-valence-valence and Auger lineshapes on the Ga and As 3d peaks. Presence of the alkali metal enhances the GaAs (110) oxidation rate several orders of magnitude above the clean surface value has been found. The range 0-100 Langmuir is investigated in detail. The oxidation process of the GaAs(110) surface in the presence of both K and Cs overlayer follows a multi-step kinetic and reaches a saturation at exposure lower than 100 Langmuir. Both Ga and As atoms are involved in the oxygen bonding. The metal enhanced semiconductor oxidation is generally reported to be a process involving predominantly the semiconductor surface atoms. However in the Cs - and K - GaAs case, an involvement of the alkali metal atoms too, reflected in the shape modification of their Auger line has been found. The promotion effect of K and Cs is discussed in terms of their low electronegativity and in comparison with the results recently reported in the literature for the other low electronegativity metals

  15. Integration of single-photon sources and detectors on GaAs

    NARCIS (Netherlands)

    Digeronimo, G.E.; Petruzzella, Maurangelo; Birindelli, Simone; Gaudio, Rosalinda; Poor, Sartoon Fattah; van Otten, Frank W.M.; Fiore, Andrea

    2016-01-01

    Quantum photonic integrated circuits (QPICs) on a GaAs platform allow the generation, manipulation, routing, and detection of non-classical states of light, which could pave the way for quantum information processing based on photons. In this article, the prototype of a multi-functional QPIC is

  16. Merging Standard CVD Techniques for GaAs and Si Epitaxial Growth

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.; Van den Bogaard, A.; Nanver, L.K.

    2010-01-01

    A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic,

  17. Manipulation and analysis of a single dopant atom in GaAs

    NARCIS (Netherlands)

    Wijnheijmer, A.P.

    2011-01-01

    This thesis focuses on the manipulation and analysis of single dopant atoms in GaAs by scanning tunneling microscopy (STM) and spectroscopy (STS) at low temperatures. The observation of ionization rings is one of the key results, showing that we can control the charge state of a single dopant atom

  18. Effects produced in GaAs by MeV ion bombardment

    International Nuclear Information System (INIS)

    Wie, C.R.

    1985-01-01

    The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

  19. Effect of thermal annealing on optical properties of implanted GaAs

    NARCIS (Netherlands)

    Kulik, M; Komarov, FF; Maczka, D

    GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its

  20. Role of wave functions in electromagnetism : RAS from GaAs (110)

    NARCIS (Netherlands)

    Wijers, C.M.J.; de Boeij, P.L.

    2001-01-01

    We have calculated the reflectance anisotropy for the GaAs (110) surface using the discrete cellular method. This method extends the range of application of standard discrete dipole calculations by incorporating nonlocal polarizabilitites. The method adds a second quantum mechanical channel of

  1. Capacitance-voltage characteristics of GaAs ion-implanted structures

    Directory of Open Access Journals (Sweden)

    Privalov E. N.

    2008-08-01

    Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

  2. A 2.5 gb/s GaAs ATM Mux Demux ASIC

    DEFF Research Database (Denmark)

    Madsen, Jens Kargaard; Lassen, Peter Stuhr

    1995-01-01

    This paper describes the design and implementation of a high speed GaAs ATM Mux Demur ASIC (AMDA) which is the key element in a high speed ATM Add-Drop unit. This unit is used in a new distributed ATM multiplexing-demultiplexing architecture for broadband switching systems. The Add-Drop unit...

  3. The role of proximity caps during the annealing of UV-ozone oxidized GaAs

    International Nuclear Information System (INIS)

    Ghosh, S. C.; Biesinger, M. C.; LaPierre, R. R.; Kruse, P.

    2007-01-01

    This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500 deg. C for 300 s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films

  4. Heat load of a GaAs photocathode in an SRF electron gun

    International Nuclear Information System (INIS)

    Wang Erdong; Zhao Kui; Jorg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; Wu Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

    2011-01-01

    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs. (authors)

  5. GaAs Wideband Low Noise Amplifier Design for Breast Cancer Detection System

    DEFF Research Database (Denmark)

    Yan, Lei; Krozer, Viktor; Delcourt, Sebastien

    2009-01-01

    Modern wideband systems require low-noise receivers with bandwidth approaching 10 GHz. This paper presents ultra-wideband stable low-noise amplifier MMIC with cascode and source follower buffer configuration using GaAs technology. Source degeneration, gate and shunt peaking inductors are used...

  6. Energy Band Structure Studies Of Zinc-Blende GaAs and InAs ...

    African Journals Online (AJOL)

    A self-consistent calculation of the structural and electronic properties of zinc blende GaAs and InAs has been carried out. The calculations were done using the full potential-linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT). The exchange-correlation energy used is the ...

  7. Optical characterization of MOVPE grown δ-InAs layers in GaAs

    Czech Academy of Sciences Publication Activity Database

    Hazdra, P.; Voves, J.; Hulicius, Eduard; Pangrác, Jiří

    2005-01-01

    Roč. 2, č. 4 (2005), s. 1319-1324 ISSN 1610-1634 R&D Projects: GA AV ČR(CZ) IAA1010318; GA MŠk(CZ) LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : δ-layer * MOVPE * GaAs * photoluminescence * photocurrent * photoreflectance Subject RIV: BM - Solid Matter Physics ; Magnetism

  8. X-ray structure amplitudes for GaAs and InP

    International Nuclear Information System (INIS)

    Pietsch, U.

    1985-01-01

    The structure amplitudes of GaAs and InP are calculated taking into account the nonspherical parts of the valence electron density by means of a static bond charge model. The best known temperature factors and dispersion coefficients are employed. The calculated structure amplitudes should help determining exactly the shape of X-ray diffraction patterns. (author)

  9. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core...

  10. Conversion Matrix Analysis of GaAs HEMT Active Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

    2006-01-01

    In this paper, the nonlinear model of the GaAs HEMT active Gilbert cell mixer is investigated. Based on the model, the conversion gain expression of active Gilbert cell mixers is derived theoretically by using conversion matrix analysis method. The expression is verified by harmonic balance simul...

  11. Antisites and anisotropic diffusion in GaAs and GaSb

    KAUST Repository

    Tahini, H. A.; Bracht, H.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

    2013-01-01

    The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport

  12. Photon counting microstrip X-ray detectors with GaAs sensors

    Science.gov (United States)

    Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

    2018-01-01

    High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

  13. Andreev reflections at interfaces between delta-doped GaAs and superconducting Al films

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Hansen, Jørn Bindslev

    1996-01-01

    By placing several Si delta-doped layers close to the surface of a GaAs molecular beam epitaxy-grown crystal, we achieve a compensation of the Schottky barrier and obtain a good Ohmic contact between an in situ deposited (without breaking the vacuum) Al metallization layer and a highly modulation...

  14. Transient four-wave mixing in T-shaped GaAs quantum wires

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Gislason, Hannes; Hvam, Jørn Märcher

    1999-01-01

    The binding energy of excitons and biexcitons and the exciton dephasing in T-shaped GaAs quantum wires is investigated by transient four-wave mixing. The T-shaped structure is fabricated by cleaved-edge overgrowth, and its geometry is engineered to optimize the one-dimensional confinement. In thi...

  15. Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

    NARCIS (Netherlands)

    Prins, M.W.J.; Jansen, R.; Kempen, van H.

    1996-01-01

    We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

  16. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

    Science.gov (United States)

    Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

    2018-04-01

    In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

  17. Response of GaAs charge storage devices to transient ionizing radiation

    Science.gov (United States)

    Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

    Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

  18. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand characterization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space. In this paper ...

  19. Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Araújo, D.; Pastore, C.E.; Gutierrez, M. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Frigeri, C. [Istituto CNR-IMEM Parco Area delle Scienze 37/A, Fontanini, 43010, Parma (Italy); Benali, A.; Lelièvre, J.F.; Gendry, M. [INL-Institut des Nanotechnologies de Lyon, UMR 5270 Ecole Centrale de Lyon 36, Avenue Guy de Collongue, 69134, Ecully Cedex (France)

    2017-02-15

    Highlights: • A TEM-HREM study of GaAs nanowires, growth over Si, is presented. • Misfit dislocations are detected in the Si/GaAs magma interface. • The study demonstrates strain relaxation through twin formation in some nanowires. - Abstract: To integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach, to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution, NWs are grown on <111> oriented Si substrates by molecular beam epitaxy (MBE) using vapor-liquid-solid (VLS) method. Transmission electron microscopy (TEM) analyses show that NWs are mainly grown alternating wurtzite and zinc blend (ZB) phases, and only few are purely ZB. On the latter, High Resolution Electron Microscopy (HREM) evidences the presence of twins near the surface of the NW showing limited concordance with the calculations of Yuan (2013) [1], where {111} twin planes in a <111>-oriented GaAs NW attain attractive interactions mediated by surface strain. In addition, such twins allow slight strain relaxation and are probably induced by the local huge elastic strain observed by HREM in the lattice between the twin and the surface. The latter is attributed to some slight bending of the NW as shown by the inversion of the strain from one side to the other side of the NW.

  20. The Development of a GaAs MMIC Reliability and Space Qualification Guide

    Science.gov (United States)

    Ponchak, G.; Kayali, S.; Huang, H-C.

    1994-01-01

    This paper discusses the need for a space qualification guide, provides a brief description of some common GaAs failure mechanisms, the approach that the NASA MMIC Reliability Assurance Program is following to develop the guide, and the status of the program.

  1. GaAs circuit restructuring by multi-level laser-direct-written tungsten process

    International Nuclear Information System (INIS)

    Black, J.G.; Doran, S.P.; Rothschild, M.; Sedlacek, J.H.C.; Ehrlich, D.J.

    1987-01-01

    Laser-direct-writing processes are employed to fabricate a GaAs digital integrated circuit. The lithography-free techniques deposit and etch conductors and resistors, and remove insulating layers, thus enabling multilevel interconnections. These combined direct-write processes provide the flexibility of clip-lead prototyping on a micrometer scale

  2. Passive inhalation of cannabis smoke

    Energy Technology Data Exchange (ETDEWEB)

    Law, B; Mason, P A; Moffat, A C; King, L J; Marks, V

    1984-09-01

    Six volunteers each smoked simultaneously, in a small unventilated room (volume 27 950 liter), a cannabis cigarette containing 17.1 mg delta 9-tetrahydrocannabinol (THC). A further four subjects - passive inhalers - remained in the room during smoking and afterwards for a total of 3 h. Blood and urine samples were taken from all ten subjects and analyzed by radioimmunoassay for THC metabolites. The blood samples from the passive subjects taken up to 3 h after the start of exposure to cannabis smoke showed a complete absence of cannabinoids. In contrast, their urine samples taken up to 6 h after exposure showed significant concentrations of cannabinoid metabolites (less than or equal to 6.8 ng ml-1). These data, taken with the results of other workers, show passive inhalation of cannabis smoke to be possible. These results have important implications for forensic toxicologists who are frequently called upon to interpret cannabinoid levels in body fluids.

  3. Active Versus Passive Academic Networking

    DEFF Research Database (Denmark)

    Goel, Rajeev K.; Grimpe, Christoph

    2013-01-01

    This paper examines determinants of networking by academics. Using information from a unique large survey of German researchers, the key contribution focuses on the active versus passive networking distinction. Is active networking by researchers a substitute or a complement to passive networking......? Other contributions include examining the role of geographic factors in networking and whether research bottlenecks affect a researcher's propensity to network. Are the determinants of European conference participation by German researchers different from conferences in rest of the world? Results show...... that some types of passive academic networking are complementary to active networking, while others are substitute. Further, we find differences in factors promoting participation in European conferences versus conferences in rest of the world. Finally, publishing bottlenecks as a group generally do...

  4. Protocol Monitoring Passive Solar Energy

    International Nuclear Information System (INIS)

    Van den Ham, E.R.; Bosselaar, L.

    1998-01-01

    A method has been developed by means of which the contribution of passive solar energy to the Dutch energy balance can be quantified univocally. The contribution was 57 PJ in 1990 and also 57 PJ in 1995. The efficiency of passive solar energy systems increased from -31.5% to -28.1% in the period 1990-1995, mainly as a result of the use of extra insulating glazing. As a result of the reduction of energy consumption for heating in houses it is expected that the extra contribution of 2 PJ will not be realized in the year 2010. It is suggested that the method to determine the absolute contribution of passive solar energy to the energy demand of dwellings is to be included in the protocol monitoring renewable energy. For the method to be included in the energy statistics of Statistics Netherlands (CBS) it can be considered only to take into account the difference compared to 1990. 11 refs

  5. Passivation of high temperature superconductors

    Science.gov (United States)

    Vasquez, Richard P. (Inventor)

    1991-01-01

    The surface of high temperature superconductors such as YBa2Cu3O(7-x) are passivated by reacting the native Y, Ba and Cu metal ions with an anion such as sulfate or oxalate to form a surface film that is impervious to water and has a solubility in water of no more than 10(exp -3) M. The passivating treatment is preferably conducted by immersing the surface in dilute aqueous acid solution since more soluble species dissolve into the solution. The treatment does not degrade the superconducting properties of the bulk material.

  6. Investigations on passive containment cooling

    International Nuclear Information System (INIS)

    Knebel, J.U.; Cheng, X.; Neitzel, H.J.; Erbacher, F.J.; Hofmann, F.

    1997-01-01

    The composite containment design for advanced LWRs that has been examined under the PASCO project is a promising design concept for purely passive decay heat removal after a severe accident. The passive cooling processes applied are natural convection and radiative heat transfer. Heat transfer through the latter process removes at an emission coefficient of 0.9 about 50% of the total heat removed via the steel containment, and thus is an essential factor. The heat transferring surfaces must have a high emission coefficient. The sump cooling concept examined under the SUCO project achieves a steady, natural convection-driven flow from the heat source to the heat sink. (orig./CB) [de

  7. Passive solar offices: integrated design

    Energy Technology Data Exchange (ETDEWEB)

    Evans, B

    1992-05-06

    Passive solar design in out-of-town offices can remove the need for air-conditioning by making greater use of daylight and natural ventilation. To promote the use of passive solar energy a series of design studies are being run by the Energy Technology Support Unit on behalf of the Department of Energy. The three reported here are designs for out-of-town business buildings. Each is a hypothetical building designed to a realistic brief for an organisation taking the role of real client. (author).

  8. The Danish Reportive Passive as a Non-Canonical Passive

    DEFF Research Database (Denmark)

    Ørsnes, Bjarne

    2013-01-01

    Danish passive utterance and cognitive verbs allow a construction where the subject of an infinitival complement is raised: Peter siges at være bortrejst (‘Peter is said to be out of town’). Contrary to English, these verbs are not ECM-verbs or subject-to-object raising verbs in the active...

  9. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    Directory of Open Access Journals (Sweden)

    V. Shutthanandan

    2012-06-01

    Full Text Available Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power free electron lasers (FEL. Photocathode quantum efficiency degradation is due to residual gases in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include helium ion microscopy, Rutherford backscattering spectrometry (RBS, atomic force microscopy, and secondary ion mass spectrometry (SIMS. In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the continuous electron beam accelerator facility (CEBAF photoinjector and one unused, were also analyzed using transmission electron microscopy (TEM and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but show evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements, the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  10. Structural and electronic properties of isovalent boron atoms in GaAs

    Science.gov (United States)

    Krammel, C. M.; Nattermann, L.; Sterzer, E.; Volz, K.; Koenraad, P. M.

    2018-04-01

    Boron containing GaAs, which is grown by metal organic vapour phase epitaxy, is studied at the atomic level by cross-sectional scanning tunneling microscopy (X-STM) and spectroscopy (STS). In topographic X-STM images, three classes of B related features are identified, which are attributed to individual B atoms on substitutional Ga sites down to the second layer below the natural {110} cleavage planes. The X-STM contrast of B atoms below the surface reflects primarily the structural modification of the GaAs matrix by the small B atoms. However, B atoms in the cleavage plane have in contrast to conventional isovalent impurities, such as Al and In, a strong influence on the local electronic structure similar to donors or acceptors. STS measurements show that B in the GaAs {110} surfaces gives rise to a localized state short below the conduction band (CB) edge while in bulk GaAs, the B impurity state is resonant with the CB. The analysis of BxGa1-xAs/GaAs quantum wells reveals a good crystal quality and shows that the incorporation of B atoms in GaAs can be controlled along the [001] growth direction at the atomic level. Surprisingly, the formation of the first and fourth nearest neighbor B pairs, which are oriented along the directions, is strongly suppressed at a B concentration of 1% while the third nearest neighbor B pairs are found more than twice as often than expected for a completely spatially random pattern.

  11. Simulated and experimental spectroscopic performance of GaAs X-ray pixel detectors

    International Nuclear Information System (INIS)

    Bisogni, M.G.; Cola, A.; Fantacci, M.E.

    2001-01-01

    In pixel detectors, the electrode geometry affects the signal shape and therefore the spectroscopic performance of the device. This effect is enhanced in semiconductors where carrier trapping is relevant. In particular, semi insulating (SI) GaAs crystals present an incomplete charge collection due to a high concentration of deep traps in the bulk. In the last few years, SI GaAs pixel detectors have been developed as soft X-ray detectors for medical imaging applications. In this paper, we present a numerical method to evaluate the local charge collection properties of pixel detectors. A bi-dimensional description has been used to represent the detector geometry. According to recent models, the active region of a reverse biased SI GaAs detector is almost neutral. Therefore, the electrostatic potential inside a full active detector has been evaluated using the Laplace equation. A finite difference method with a fixed step orthogonal mesh has been adopted. The photon interaction point has been generated with a Monte Carlo method according to the attenuation length of a monochromatic X-ray beam in GaAs. The number of photogenerated carriers for each interaction has been extracted using a gaussian distribution. The induced signal on the collecting electrode has been calculated according to the Ramo's theorem and the trapping effect has been modeled introducing electron and hole lifetimes. The noise of the charge preamplifier have been also taken into account. A comparison between simulated and experimental X-ray spectra from a 241 Am source acquired with different GaAs pixel detectors has been carried out

  12. Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons

    International Nuclear Information System (INIS)

    Fromme, B.; Baum, G.; Goeckel, D.; Raith, W.

    1989-01-01

    Circularly polarized light is emitted in radiative transitions of polarized electrons from the conduction to the valence band in GaAs or GaAs 1-x P x crystals. The degree of light polarization is directly related to the polarization of the conduction-band electrons at the instant of recombination and allows conclusions about the depolarization of electrons in the conduction band. The depolarization is caused by spin-relaxation processes. The efficiency of these processes depends on crystal type, crystal temperature, degree of doping, and kinetic energy of the electrons. Highly p-doped GaAs and GaAs 0.62 P 0.38 crystals (N A >1x10 19 atoms/cm 3 ) were bombarded with polarized electrons (initial polarization 38%), and the spectral distribution and the circular polarization of the emitted recombination radiation were measured. The initial kinetic energy of the electrons in the conduction band was varied between 5 and 1000 eV. The measurements of the spectral distribution show that the electrons are thermalized before recombination occurs, independent of their initial energy. An important thermalization process in this energy range is the excitation of crystal electrons by electron-hole pair creation. The circular polarization of the recombination radiation lies below 1% in the whole energy range. It decreases with increasing electron energy but is still of measurable magnitude at 100 eV in the case of GaAs 0.62 P 0.38 . The circular polarization is smaller for GaAs than for GaAs 0.62 P 0.38 , which we attribute to more efficient spin relaxation in GaAs

  13. Antenna for passive RFID tags

    Science.gov (United States)

    Schiopu, Paul; Manea, Adrian; Cristea, Ionica; Grosu, Neculai; Vladescu, Marian; Craciun, Anca-Ileana; Craciun, Alexandru

    2015-02-01

    Minuscule devices, called RFID tags are attached to objects and persons and emit information which positioned readers may capture wirelessly. Many methods of identification have been used, but that of most common is to use a unique serial number for identification of person or object. RFID tags can be characterized as either active or passive [1,2]. Traditional passive tags are typically in "sleep" state until awakened by the reader's emitted field. In passive tags, the reader's field acts to charge the capacitor that powers the badge and this can be a combination of antenna and barcodes obtained with SAW( Surface Acoustic Wave) devices [1,2,3] . The antenna in an RFID tag is a conductive element that permits the tag to exchange data with the reader. The paper contribution are targeted to antenna for passive RFID tags. The electromagnetic field generated by the reader is somehow oriented by the reader antenna and power is induced in the tag only if the orientation of the tag antenna is appropriate. A tag placed orthogonal to the reader yield field will not be read. This is the reason that guided manufacturers to build circular polarized antenna capable of propagating a field that is alternatively polarized on all planes passing on the diffusion axis. Passive RFID tags are operated at the UHF frequencies of 868MHz (Europe) and 915MHz (USA) and at the microwave frequencies of 2,45 GHz and 5,8 GHz . Because the tags are small dimensions, in paper, we present the possibility to use circular polarization microstrip antenna with fractal edge [2].

  14. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  15. High Pressure Spectroscopic Studies of AlGaAs, GaAs, and II-VI Semiconductors and Heterostructures

    National Research Council Canada - National Science Library

    Chandrasekhar, Meera

    1997-01-01

    We have conducted four studies on three different but related materials. The first is a temperature study of a pseudomorphic epilayer of ZnSe on GaAs, where we measured the temperature dependence of the interlayer biaxial strain...

  16. GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect

    Science.gov (United States)

    Rozahun, Ilmira; Bahti, Tohtiaji; He, Guijie; Ghupur, Yasenjan; Ablat, Abduleziz; Mamat, Mamatrishat

    2018-05-01

    Monolayer materials are considered as a promising candidate for novel applications due to their attractive magnetic, electronic and optical properties. Investigation on nonlinear optical (NLO) properties and effect of vacancy on monolayer materials are vital to property modulations of monolayers and extending their applications. In this work, with the aid of first-principles calculations, the crystal structure, electronic, magnetic, and optical properties of GaAs monolayers with the vacancy were investigated. The result shows gallium arsenic (GaAs) monolayer produces a strong second harmonic generation (SHG) response. Meanwhile, the vacancy strongly affects structural, electronic, magnetic and optical properties of GaAs monolayers. Furthermore, arsenic vacancy (VAs) brings semi metallic to metallic transition, while gallium vacancy (VGa) causes nonmagnetic to magnetic conversion. Our result reveals that GaAs monolayer possesses application potentials in Nano-amplifying modulator and Nano-optoelectronic devices, and may provide useful guidance in designing new generation of Nano-electronic devices.

  17. Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

    International Nuclear Information System (INIS)

    Shcherbachev, Kirill; Bailey, Melanie J.

    2011-01-01

    An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He + ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Surface Passivation in Empirical Tight Binding

    Science.gov (United States)

    He, Yu; Tan, Yaohua; Jiang, Zhengping; Povolotskyi, Michael; Klimeck, Gerhard; Kubis, Tillmann

    2016-03-01

    Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that explicitly includes passivation atoms is limited to passivation with atoms and small molecules only. 2) Method that implicitly incorporates passivation does not distinguish passivation atom types. This work introduces an implicit passivation method that is applicable to any passivation scenario with appropriate parameters. This method is applied to a Si quantum well and a Si ultra-thin body transistor oxidized with SiO2 in several oxidation configurations. Comparison with ab-initio results and experiments verifies the presented method. Oxidation configurations that severely hamper the transistor performance are identified. It is also shown that the commonly used implicit H atom passivation overestimates the transistor performance.

  19. Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD

    Directory of Open Access Journals (Sweden)

    K. F. Yarn

    2003-01-01

    group V partial pressure, growth rate and V/III ratios. A mirror-like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs/InGaAs metamorphic HEMT on GaAs substrates.

  20. Mass and energy dispersive recoil spectrometry of GaAs structures

    International Nuclear Information System (INIS)

    Hult, M.

    1994-01-01

    Mass and energy dispersive Recoil Spectrometry (RS) using heavy ions at energies of about 0.2Α-0.8Α MeV has attracted much interest recently due to its potential for separately and unambiguously generating information on isotopic depth distributions. The principal advantages of mass and energy dispersive RS are that both light and heavy elements can be separately studied simultaneously and problems caused by chemical matrix effects are avoided since the technique is based on high energy nucleus-nucleus scattering. In order to elucidate reactions taking place in various GaAs structures, Time of flight-Energy (ToF-E) RS was developed to allow Ga and As to be studied separately down to depths of about 500-800 nm with a depth resolution of about 16 nm at the surface. This was shown in a study of an Al x Ga 1-x As quantum-well structure. The benefits of using ToF-E RS on GaAs structures were further demonstrated in studies of Co/GaAs and CoSi 2 /GaAs reactions, as well as in a study of the composition of MOCVD grown Al x Ga 1-x As. Most recoil measurements employed 127 I at energies of about 50-90 MeV as projectiles. The recoil detector telescope consisted of a silicon energy detector and two carbon foil time pick-off detectors separated by a variable flight length of 213.5-961 mm. The reactions taking place between various thin films and GaAs were also studied using complementary techniques such as XRD, XPS and SEM. Co was found to react extensively with GaAs, already at about 300 degrees C, making it unsuitable as a contact material. Thin films of Co and Si were found to react extensively with each other and to form CoSi 2 at 500 degrees C and above. CoSi 2 , a low resistivity silicide, turned out to be stable on GaAs, at least up to 700 degrees C. Considerable grain growth could cause problems, however, in the use of CoSi 2 -contacts. 112 refs, figs, tabs

  1. Passivation Of High-Temperature Superconductors

    Science.gov (United States)

    Vasquez, Richard P.

    1991-01-01

    Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

  2. Passive Scalar Evolution in Peripheral Region

    OpenAIRE

    Lebedev, V. V.; Turitsyn, K. S.

    2003-01-01

    We consider evolution of a passive scalar (concentration of pollutants or temperature) in a chaotic (turbulent) flow. A universal asymptotic behavior of the passive scalar decay (homogenization) related to peripheral regions (near walls) is established. The passive scalar moments and its pair correlation function in the peripheral region are analyzed. A special case investigated in our paper is the passive scalar decay along a pipe.

  3. Two or three decades of passive directions

    International Nuclear Information System (INIS)

    Cook, J.

    1995-01-01

    This paper presents an overview of the direction of passive solar architecture. The topics of the paper include design temperatures for buildings, active vs passive, fuel vs philosophy, engineering vs architecture, the thermal scale: heating vs cooling, fuel subsidies, divergent practices, sustainability, lighting, health, the place of passive technology

  4. Active house concept versus passive House

    NARCIS (Netherlands)

    Zeiler, W.; Boxem, G.; Vehler, R.; Verhoeven, M.; Fremouw, M.

    2009-01-01

    The passive house concept is the present trend in energy efficient sustainable dwellings. Within the passive house concept every effort is made to minimize the energy use. Substantial savings can be achieved by passive energy systems, especially natural ventilation, summer shading and winter solar

  5. Innovative solutions in passive house details

    NARCIS (Netherlands)

    Mlecnik, E.; Hilderson, W.

    2008-01-01

    For the realization of the first passive house demonstration projects in Belgium, passive houses were requested by convinced clients, designed by architects with experience in low energy building, and built by contractors with a feeling for working in building teams. These first passive house

  6. A Lexical Approach to Passive in ESL.

    Science.gov (United States)

    Marshall, Fred

    Dissatisfaction with the standard transformational grammar approach to teaching passive voice sentences gave rise to the method developed. It is based on the framework of a lexical-functional grammar, which claims that both active and passive sentences are base-generated, and that both active and passive verb forms occur in the lexicon. It would…

  7. Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

    Science.gov (United States)

    Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Kim, Sangin; Rotermund, Fabian; Lim, Hanjo; Lee, Jaejin

    2012-07-01

    Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

  8. Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

    2015-07-01

    GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

  9. Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

    Science.gov (United States)

    Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

    2014-12-01

    High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

  10. Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance

    Directory of Open Access Journals (Sweden)

    O. G. Ibarra-Manzano

    2012-02-01

    Full Text Available Optical spectra of light reflection are detected under an influence of ultrasonic wave (UWon a GaAs wafer. The differential spectrum is calculated as a difference between those taken under UW and without that influence on a sample. This acousto-optic differential reflectance(AODR spectrum contains some bands that represent the energetic levels of the shallow centers in a sample. A physical basis of this technique is related to a perturbation of local states by UW. Here, a method is developed for characterization of local states at the surfaces and interfaces in crystals and low-dimensional epitaxial structures based on microelectronics materials. A theoretical model is presented to explain AODR spectra. Also, experiments using epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimental results show that acousto-optic reflectance is an effective tool for characterization of shallow trapping centers in epitaxial semiconductor structures.En este trabajo, utilizamos el espectro de la luz reflejada en una muestra de Arsenuro de Galio (GaAs bajo la influencia de una onda ultrasónica. El diferencial espectral es calculado como una diferencia entre el espectro del material obtenido bajo la influencia del ultrasonido y aquél obtenido sin dicha influencia. Este diferencial de reflectancia espectral acusto-óptico (AODR contiene algunas bandas que representan los niveles energéticos de los centros en la superficie de la muestra. Esta técnica está basada en la perturbación de los estados locales generada por el ultrasonido. Particularmente, este trabajo presenta un método para caracterizar los estados locales en la superficie y las interfaces en los cristales, así como estructuras epiteliales de baja dimensión basadas en materiales semiconductores. Para ello, se presenta un modelo teórico para explicar dicho espectro de reflectancia diferencial (AODR. También se realizaron experimentos con estructuras de GaAs epitelial

  11. Pinning-free GaAs MIS structures with Si interface control layers formed on (4 x 6) reconstructed (0 0 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Anantathanasarn, Sanguan; Hasegawa, Hideki

    2003-06-30

    (0 0 1)-Oriented GaAs metal-insulator-semiconductor (MIS) structures having a silicon interface control layer (Si ICL) were fabricated on surfaces having Ga-rich (4x6) reconstructions. Si ICL was grown by molecular beam epitaxy. MIS structures were fabricated by partially converting Si ICL to SiN{sub x} by direct nitridation, and further depositing a thick SiO{sub 2} layer on top as the main passivation dielectric by plasma-assisted chemical vapor deposition. Reflection high-energy electron diffraction, in situ X-ray photoelectron spectroscopy and MIS capacitance-voltage (C-V) techniques were used for characterization. The initial surface reconstruction was found to have a surprisingly strong effect on the degree of Fermi level pinning at the MIS interface. In contrast to the standard As-rich (2x4) surface, which results in strongly pinned MIS interfaces, the novel SiO{sub 2}/SiN{sub x}/Si ICL/GaAs MIS structures formed on ''genuine'' (4x6) surface realized complete unpinning of Fermi level over the entire band gap with a minimum interface state density of 4x10{sup 10} cm{sup -2} eV{sup -1} range.

  12. GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Vaisman, Michelle [Yale University; Li, Qiang [Hong Kong University of Science and Technology; Lau, Kei May [Hong Kong University of Science and Technology

    2017-08-31

    Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

  13. The miniband spectrum in (AlAs) sub M (GaAs) sub N (111)

    CERN Document Server

    Karavaev, G F; Egunov, R M

    2002-01-01

    The electron states for energies in the conduction band of (AlAs) sub M (GaAs) sub N (111) superlattices with M >= N (N < 10) are considered. The properties of such superlattices are mainly determined by electrons of X-valley in AlAs and L-valley in GaAs. The calculations are carried out on the basis of the envelope-function model of interface band mixing. Miniband spectra, symmetry and localization of wave functions, and also probabilities of the interminiband infrared absorption are defined and analyzed. It is shown that the latter have a significant magnitude not only at light polarization along the superlattice growth axis, but also at normal incidence of a light wave to the surface. The analysis has been normal incidence of a light wave to the surface. The analysis has shown the importance of consideration of X sub 5 -states belonging to the valence band for infrared absorption

  14. Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico); Balderas-Navarro, R.E. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico); Facultad de Ciencias, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2008-07-01

    We report on a theoretical-experimental study of reflectance anisotropy spectroscopy (RAS) of GaAs (001) crystals under uniaxial stress. The study was carried out in the energy region around the fundamental transition. RAS spectra in the energy range from 1.2-1.7 eV were measured with a photoelastic-modulator-based spectrometer. To induce an optical anisotropy, the GaAs crystals were thinned down to 400 {mu}m and an calibrated uniaxial stress was applied by deflection. RAS showed a line shape consisting of an oscillation at around E{sub 0}. On the basis of a perturbative approach employing the Pikus-Bir Hamiltonian, we calculated the RAS line shape and found a close agreement with the experimental spectra. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Temperature dependence of the Rashba and Dresselhaus spin–orbit interactions in GaAs wells

    International Nuclear Information System (INIS)

    Wang, W.; Fu, J.Y.

    2016-01-01

    We have recently shown [Fu and Egues, Phys. Rev. B 91 (2015) 075408] unusual properties of the spin–orbit (SO) interaction in relatively wide quantum wells, e.g., the second subband Rashba term can vanish even in asymmetric configurations. Here we report our theoretical investigation on the temperature dependence of Rashba and Dresselhaus SO interactions in GaAs both relatively narrow and wide wells, having the electron occupancy of one and two subbands, respectively. We consider all relevant intra- and intersubband SO terms. We find that the variation of intrasubband couplings as temperatures range from 0.3 to 300 K could attain, ∼meV Å, the order of usual magnitudes for SO terms in GaAs wells. Moreover, we observe distinct behaviors of the SO interaction of the two subbands, as functions of temperature. On the other band, we find that the intersubband SO terms have a relatively weak temperature dependence.

  16. Temperature dependence of the Rashba and Dresselhaus spin–orbit interactions in GaAs wells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W. [Department of Physics, Jining University, 273155 Qufu, Shandong (China); Fu, J.Y., E-mail: jiyongfu78@gmail.com [Department of Physics, Qufu Normal University, 273165 Qufu, Shandong (China); Instituto de Física de São Carlos, Universidade de São Paulo, 13560-970 São Carlos, SP (Brazil); Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil)

    2016-02-01

    We have recently shown [Fu and Egues, Phys. Rev. B 91 (2015) 075408] unusual properties of the spin–orbit (SO) interaction in relatively wide quantum wells, e.g., the second subband Rashba term can vanish even in asymmetric configurations. Here we report our theoretical investigation on the temperature dependence of Rashba and Dresselhaus SO interactions in GaAs both relatively narrow and wide wells, having the electron occupancy of one and two subbands, respectively. We consider all relevant intra- and intersubband SO terms. We find that the variation of intrasubband couplings as temperatures range from 0.3 to 300 K could attain, ∼meV Å, the order of usual magnitudes for SO terms in GaAs wells. Moreover, we observe distinct behaviors of the SO interaction of the two subbands, as functions of temperature. On the other band, we find that the intersubband SO terms have a relatively weak temperature dependence.

  17. Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

    KAUST Repository

    Kaloni, Thaneshwor P.

    2013-11-13

    Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.

  18. Spectral dependence of the refractive index of single-crystalline GaAs for optical applications

    International Nuclear Information System (INIS)

    Plotnichenko, V G; Nazaryants, V O; Kryukova, E B; Dianov, E M

    2010-01-01

    The refractive index of crystalline GaAs is measured by the method of interference refractometry in the wavenumber range from 10 500 to 540 cm -1 (or the wavelength range from 0.9 to 18.6 μm) with a resolution of 0.1 cm -1 . The measurement results are approximated by the generalized Cauchy dispersion formula of the 8th power. Spectral wavelength dependences of the first- and second-order derivatives of the refractive index are calculated, and the zero material dispersion wavelength is found to be λ 0 = 6.61 μm. Using three GaAs plates of different thicknesses we managed to raise the refractive index measurement accuracy up to 4 x 10 -4 or 0.02%, being nearly by an order of magnitude better than the data available.

  19. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

    International Nuclear Information System (INIS)

    Zhou Jiahui; Xu Wenjun; Li Qi; Li Simin; He Zhiyi; Li Haiou; Chang Hudong; Liu Honggang; Liu Guiming

    2015-01-01

    The impact of various thicknesses of Al 2 O 3 metal—insulator—metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al 2 O 3 , the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm 2 and acceptable voltage coefficients of capacitance of 681 ppm/V 2 at 1 MHz. An outstanding VCC-α of 74 ppm/V 2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al 2 O 3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al 2 O 3 could be very promising candidates for GaAs RFIC applications. (paper)

  20. The Mn site in Mn-doped GaAs nanowires: an EXAFS study

    International Nuclear Information System (INIS)

    D’Acapito, F; Rovezzi, M; Boscherini, F; Jabeen, F; Bais, G; Piccin, M; Rubini, S; Martelli, F

    2012-01-01

    We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched MnAs coordination, we have found the presence of Mn in a MnAu intermetallic compound. (paper)

  1. Spectral dependence of the refractive index of single-crystalline GaAs for optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Plotnichenko, V G; Nazaryants, V O; Kryukova, E B; Dianov, E M, E-mail: victor@fo.gpi.ac.r [Fibre Optics Research Center of the Russian Academy of Sciences, 38 Vavilov Street, Moscow 119333 (Russian Federation)

    2010-03-17

    The refractive index of crystalline GaAs is measured by the method of interference refractometry in the wavenumber range from 10 500 to 540 cm{sup -1} (or the wavelength range from 0.9 to 18.6 {mu}m) with a resolution of 0.1 cm{sup -1}. The measurement results are approximated by the generalized Cauchy dispersion formula of the 8th power. Spectral wavelength dependences of the first- and second-order derivatives of the refractive index are calculated, and the zero material dispersion wavelength is found to be {lambda}{sub 0} = 6.61 {mu}m. Using three GaAs plates of different thicknesses we managed to raise the refractive index measurement accuracy up to 4 x 10{sup -4} or 0.02%, being nearly by an order of magnitude better than the data available.

  2. Charge collection efficiency of GaAs detectors studied with low-energy heavy charged particles

    CERN Document Server

    Bates, R; Linhart, V; O'Shea, V; Pospísil, S; Raine, C; Smith, K; Sinor, M; Wilhelm, I

    1999-01-01

    Epitaxially grown GaAs layers have recently been produced with sufficient thickness and low enough free carrier concentration to permit their use as radiation detectors. Initial tests have shown that the epi-material behaves as a classical semiconductor as the depletion behaviour follows the square root dependency on the applied bias. This article presents the results of measurements of the growth of the active depletion depth with increasing bias using low-energy protons and alpha particles as probes for various depths and their comparison to values extrapolated from capacitance measurements. From the proton and alpha particle spectroscopic measurements, an active depth of detector material that collects 100% of the charge generated inside it was determined. The consistency of these results with independent capacitance measurements supports the idea that the GaAs epi-material behaves as a classical semiconductor. (author)

  3. Modulation of low-frequency oscillations in GaAs MESFETs' channel current by sidegating bias

    Institute of Scientific and Technical Information of China (English)

    DING Yong; LU Shengli; ZHAO Fuchuan

    2005-01-01

    Low-frequency oscillations in channel current are usually observed when measuring the GaAs MESFET's output characteristics. This paper studies the oscillations by testing the MESFET's output characteristics under different sidegate bias conditions. It is shown that the low-frequency oscillations of channel current are directly related to the sidegate bias. In other words, the sidegate bias can modulate the oscillations. Whether the sidegate bias varies positively or negatively, there will inevitably be a threshold voltage after which the low-frequency oscillations disappear. The observation is strongly dependent upon the peculiarities of channel-substrate (C-S) junction and impact ionization of traps-EL2 under high field. This conclusion is of particular pertinence to the design of low-noise GaAs IC's.

  4. Creation of oxygen-enriched layers at the surface of GaAs single crystal

    International Nuclear Information System (INIS)

    Kulik, M.; Maczka, D.; Kobzev, A.P.

    1999-01-01

    The optical properties and the element depth profiles at the (100) plane high resistant and noncomposite GaAs single crystals implanted with In ions were investigated. The results have been compared with those obtained for virgin samples. The optic properties for all of the samples (implanted and not implanted, annealed and not annealed) have been measured using the ellipsometric method. The element depth profiles for the same samples have been obtained by the RBS and NRA techniques. It has been shown that the post-implantation annealing at a temperature more than 600 deg C leads to a ten time increase in contents of oxygen atoms in the implanted layer with respect to the not annealed sample. The thickness of the transparence layer at the surface of GaAs single crystal increases also after implantation with In ions and subsequent annealing

  5. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    International Nuclear Information System (INIS)

    Bietti, Sergio; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano; Fedorov, Alexey

    2014-01-01

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E A =1.31±0.15 eV, a diffusivity prefactor of D 0  = 0.53(×2.1±1) cm 2 s −1 that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  6. The lower yield point of InP and GaAs

    International Nuclear Information System (INIS)

    Siethoff, H.

    1987-01-01

    A study of the strain-rate and temperature dependence of the lower yield stress (τ ly ) in undoped InP and of the strain-rate dependence of τ ly in undoped and Zn-doped GaAs is reported. The deformation along (123) orientation was carried out in compression at constant strain rates ranging from 10 -5 to 10 -2 s -1 . The temperature range extended from 540 to 780 0 C. The activation energy and stress exponent of the dislocation velocity were calculated. Experiments have shown that τ ly of InP depends on temperature and strain rate in a manner similar to other semiconductors like Si and InSb, whereas τ ly of GaAs shows an unusual strain-rate dependence

  7. Final states in Si and GaAs via RF μSR spectroscopy

    International Nuclear Information System (INIS)

    Kreitzman, S.R.; Pfiz, T.; Riseman, T.M.; Brewer, J.H.; Williams, D.L.; Sun-Mack, S.; Estle, T.L.

    1991-01-01

    The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu * states at any temperature. However, our results on the diamagnetic final state (μ f + ) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu * and Mu. We observe a full μ f + fraction at 317 K when the Mu relaxation rate is above 10 μs -1 . GaAs differs from the situation in Si in that we observed only a partial conversion of Mu * and Mu to a μ + final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively. (orig.)

  8. Final states in Si and GaAs via RF μSR spectroscopy

    Science.gov (United States)

    Kreitzman, S. R.; Pfiz, T.; Sun-Mack, S.; Riseman, T. M.; Brewer, J. H.; Williams, D. Ll.; Estle, T. L.

    1991-02-01

    The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu* states at any temperature. However, our results on the diamagnetic final state (μ{f/+}) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu* and Mu. We observe a full μ{f/+} fraction at 317 K when the Mu relaxation rate is above 10 μs-1. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu* and Mu to a μ+ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively.

  9. Formation of columnar (In,Ga)As quantum dots on GaAs(100)

    International Nuclear Information System (INIS)

    He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced

  10. Optical pumping and negative luminescence polarization in charged GaAs quantum dots

    Science.gov (United States)

    Shabaev, Andrew; Stinaff, Eric A.; Bracker, Allan S.; Gammon, Daniel; Efros, Alexander L.; Korenev, Vladimir L.; Merkulov, Igor

    2009-01-01

    Optical pumping of electron spins and negative photoluminescence polarization are observed when interface quantum dots in a GaAs quantum well are excited nonresonantly by circularly polarized light. Both observations can be explained by the formation of long-lived dark excitons through hole spin relaxation in the GaAs quantum well prior to exciton capture. In this model, optical pumping of resident electron spins is caused by capture of dark excitons and recombination in charged quantum dots. Negative polarization results from accumulation of dark excitons in the quantum well and is enhanced by optical pumping. The dark exciton model describes the experimental results very well, including intensity and bias dependence of the photoluminescence polarization and the Hanle effect.

  11. Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

    KAUST Repository

    Kaloni, Thaneshwor P.; Schwingenschlö gl, Udo

    2013-01-01

    Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.

  12. Intermediate band solar cell simulation use InAs quantum dot in GaAs

    International Nuclear Information System (INIS)

    Hendra P, I. B.; Rahayu, F.; Sahdan, M. F.; Darma, Y.

    2015-01-01

    Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%

  13. Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Lebib, A.; Hannanchi, R. [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); Beji, L., E-mail: lotbej_fr@yahoo.fr [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); EL Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019 Monastir (Tunisia)

    2016-12-01

    We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

  14. Diffusion of $^{56}$Co in GaAs and SiGe alloys

    CERN Multimedia

    Koskelo, O K

    2007-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of cobalt in GaAs and SiGe alloys under intrinsic conditions. In the literature only three previous studies for Co diffusion in GaAs may be found and the results differ by over four orders of magnitude from each other. For Co diffusion in SiGe alloys no previous data is available in the literature. For Co diffusion in Ge one study may be found but the results have been obtained with material having increased dislocation density. For dislocation-free material no previous measurements are available. For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{56}$Co$^{+}$ ion beam.

  15. TEM study of the indentation behaviour of thin Au film on GaAs

    International Nuclear Information System (INIS)

    Patriarche, G.; Le Bourhis, E.; Faurie, D.; Renault, P.O.

    2004-01-01

    Au films of 8.9 nm thickness have been sputter deposited onto a (001) GaAs substrate at room temperature. An average grain size of 10 nm and no texture were obtained. Subsequent, nanoindentation tests were performed on the coated specimens and the mechanical response was compared to that of a bulk GaAs sample with the same crystallographic orientation. Furthermore, the loading-unloading curves were analysed in view of transmission electron microscopy plan-view images obtained on the deformed substrate-film specimens and compared to results previously reported in the literature for bulk sample. Constrained plasticity of the films was observed to occur for residual depth to thickness ratio below 0.67. Further, plastic deformation of the substrate happened on coated specimens at loads less than those required to plastically deform bare substrate

  16. Annealing of low-temperature GaAs studied using a variable energy positron beam

    International Nuclear Information System (INIS)

    Keeble, D.J.; Umlor, M.T.; Asoka-Kumar, P.; Lynn, K.G.; Cooke, P.W.

    1993-01-01

    The annihilation characteristics of monoenergetic positrons implanted in a molecular beam epitaxy layer of low-temperature (LT) GaAs annealed at temperatures from 300 to 600 degree C were measured. A gallium vacancy concentration of approximately 3x10 17 cm -3 is inferred for the as-grown material. The S parameter increased significantly upon anneal to 500 degree C. The dominant positron traps in samples annealed at and below 400 degree C are distinct from those acting for samples annealed to 500 or 600 degree C. The change in S parameter for the 600 degree C annealed sample compared to the GaAs substrate, S LT,600 =1.047S sub , is consistent with divacancies or larger open volume defects

  17. Electrons, holes, and excitons in GaAs polytype quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Climente, Juan I.; Segarra, Carlos; Rajadell, Fernando; Planelles, Josep, E-mail: josep.planelles@uji.es [Departament de Química Física i Analítica, Universitat Jaume I, E-12080 Castelló (Spain)

    2016-03-28

    Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.

  18. Determination of the thickness of chemically removed thin layers on GaAs VPE structures

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, K.; Nemeth-Sallay, M.; Nemcsics, A. (Research Inst. for Technical Physics, Hungarian Academy of Sciences, Budapest (Hungary))

    1991-01-01

    Thinning of epitaxial GaAs layers was studied during the surface etching, with a special attention to submicron epitaxial structures, like MESFET or varactor-type structures. Each chemical treatment influences the crystal surface during the device preparation processes, though the possible thinning of the active layer is small. Therefore a method allowing determination of thicknesses as small as at about 20 nm of the layer removed by chemical etching from GaAs VPE structures was applied. Using special multilayered structures and a continuous electrochemical carrier concentration depth profiling, the influence of the layer thickness inhomogeneity and of some measurement errors can be minimized. Some frequently used etchants and the influence of different - so called - non-etching processes were compared in different combinations. It was shown that besides the direct etching a change of the surface conditions occurs, which influences the etch rate in the succeeding etching procedure. (orig.).

  19. In situ electron backscattered diffraction of individual GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Prikhodko, S.V. [Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095 (United States)], E-mail: sergey@seas.ucla.edu; Sitzman, S. [Oxford Instruments America, Concord, MA 01742 (United States); Gambin, V. [Northrop Grumman Space Technology, Redondo Beach, CA 90278 (United States); Kodambaka, S. [Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095 (United States)

    2008-12-15

    We suggest and demonstrate that electron backscattered diffraction, a scanning electron microscope-based technique, can be used for non-destructive structural and morphological characterization of statistically significant number of nanowires in situ on their growth substrate. We obtain morphological, crystal phase, and crystal orientation information of individual GaAs nanowires in situ on the growth substrate GaAs(1 1 1) B. Our results, verified using transmission electron microscopy and selected area electron diffraction analyses of the same set of wires, indicate that most wires possess a wurtzite structure with a high density of thin structural defects aligned normal to the wire growth axis, while others grow defect-free with a zincblende structure. The demonstrated approach is general, applicable to other material systems, and is expected to provide important insights into the role of substrate structure on nanowire structure on nanowire crystallinity and growth orientation.

  20. Traffic classification with passive measurement

    OpenAIRE

    Pham, Hoang Phong

    2005-01-01

    Abstract This is a master thesis from a collaboration between Oslo University College and Uninett Research. Uninett have a passive monitoring device on a 2.5 Gbps backbone link between Trondheim and Narvik. They uses measurement with optical splitters and specialized measuring interfaces to trace traffic with Gigabit speed. We would like to investigate the structure and patterns in these data. It is of special interest to classify the traffic belonging to different services and protocols. ...

  1. EP1000 passive plant description

    International Nuclear Information System (INIS)

    Saiu, G.

    1999-01-01

    In 1994, a group of European Utilities, together with Westinghouse and its Industrial Partner GENESI (an Italian consortium including ANSALDO and FIAT), initiated a program designated EPP (European Passive Plant) to evaluate Westinghouse Passive Nuclear Plant Technology for application in Europe. In Phase I of the European Passive Plant Program which was completed in 1996, a 1000 MWe passive plant reference design (EP1000) was established which conforms to the European Utility Requirements (EUR) and is expected to meet the European Safety Authorities requirements. Phase 2 of the program was initiated in 1997 with the objective of developing the Nuclear Island design details and performing supporting analyses to start development of Safety Case Report (SCR) for submittal to European Licensing Authorities. The first part of Phase 2, 'Design Definition' phase (Phase 2A) will be completed at the end of 1998, the main efforts being design definition of key systems and structures, development of the Nuclear Island layout, and performing preliminary safety analyses to support design efforts. The second part, 'Phase 2B', includes both the analyses and evaluations required to demonstrate the adequacy of the design, and to support the preparation of Safety Case Report. The second part of Phase 2 of the program will start at the beginning of 1999 and will be completed in the 2001. Incorporation of the EUR has been a key design requirement for the EP1000 from the beginning of the program. Detailed design solutions to meet the EUR have been defined and the safety approach has also been developed based on the EUR guidelines. This paper integrates and updates the plant description reported in the IAEA TECDOC-968. The most significant developments of the EP1000 plant design during Phase 2A of the EPP program are described and reference is made to the key design requirements set by the EUR Rev. B document. (author)

  2. Active and Passive Hybrid Sensor

    Science.gov (United States)

    Carswell, James R.

    2010-01-01

    A hybrid ocean wind sensor (HOWS) can map ocean vector wind in low to hurricane-level winds, and non-precipitating and precipitating conditions. It can acquire active and passive measurements through a single aperture at two wavelengths, two polarizations, and multiple incidence angles. Its low profile, compact geometry, and low power consumption permits installation on air craft platforms, including high-altitude unmanned aerial vehicles (UAVs).

  3. Alternative to Nitric Acid Passivation

    Science.gov (United States)

    Kessel, Kurt R.

    2016-01-01

    Corrosion is an extensive problem that affects the National Aeronautics and Space Administration (NASA) and European Space Agency (ESA). The deleterious effects of corrosion result in steep costs, asset downtime affecting mission readiness, and safety risks to personnel. It is vital to reduce corrosion costs and risks in a sustainable manner. The primary objective of this effort is to qualify citric acid as an environmentally-preferable alternative to nitric acid for passivation of stainless steel alloys.

  4. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated

  5. Interior design for passive solar homes

    Energy Technology Data Exchange (ETDEWEB)

    Breen, J. C.

    1981-07-01

    The increasing emphasis on refinement of passive solar systems has brought recognition to interior design as an integral part of passive solar architecture. Interior design can be used as a finetuning tool minimizing many of the problems associated with passive solar energy use in residential buildings. In addition, treatment of interior space in solar model homes may be a prime factor in determining sales success. A new style of interior design is evolving in response to changes in building form incorporating passive solar design features. The psychology behind passive solar architecture is reflected in interiors, and selection of interior components increasingly depends on the functional suitability of various interior elements.

  6. Interior design for passive solar homes

    Science.gov (United States)

    Breen, J. C.

    1981-07-01

    The increasing emphasis on refinement of passive solar systems brought recognition to interior design as an integral part of passive solar architecture. Interior design can be used as a finetuning tool minimizing many of the problems associated with passive solar energy use in residential buildings. In addition, treatment of interior space in solar model homes may be a prime factor in determining sales success. A new style of interior design is evolving in response to changes in building from incorporating passive solar design features. The psychology behind passive solar architecture is reflected in interiors, and selection of interior components increasingly depends on the functional suitably of various interior elements.

  7. Degradation of materials and passivity

    International Nuclear Information System (INIS)

    Meisel, W.

    1997-01-01

    Demanding for a reduction in materials degradation is a serious problem all over the world. Moessbauer spectroscopy (MS) is, among others, a very valuable tool to follow many degradation processes. Evidently, Fe is the most important Moessbauer element considering the overall presence of iron in everyday life. MS may contribute to our knowledge about nearly all fields of materials degradation, chemical, mechanical, thermal, irradiative, etc. Following some general lines, corrosion is considered in particular. MS is applicable to investigate the bulk of materials as well as their surface layers with an information depth of ca. 250 nm. In general, it has to be applied as a surface sensitive method in combination with other relevant methods in order to get a detailed insight into ongoing processes. Some examples have been selected to elucidate the application of MS in this field. Another class of examples concerns attempts to prevent corrosion, i.e., the application of coatings and transforming chemicals. A very effective and most natural way to reduce corrosion is the passivation of materials. The effect of passive layers and their destruction by environmental influences are discussed using results of MS and related methods. It is outlined that passivity is not restricted to chemically treated metals but can be considered as a general concept for preventing different kinds of materials from degradation. (orig.)

  8. Passive infrared motion sensing technology

    International Nuclear Information System (INIS)

    Doctor, A.P.

    1994-01-01

    In the last 10 years passive IR based (8--12 microns) motion sensing has matured to become the dominant method of volumetric space protection and surveillance. These systems currently cost less than $25 to produce and yet use traditionally expensive IR optics, filters, sensors and electronic circuitry. This IR application is quite interesting in that the volumes of systems produced and the costs and performance level required prove that there is potential for large scale commercial applications of IR technology. This paper will develop the basis and principles of operation of a staring motion sensor system using a technical approach. A model for the motion of the target is developed and compared to the background. The IR power difference between the target and the background as well as the optical requirements are determined from basic principles and used to determine the performance of the system. Low cost reflective and refractive IR optics and bandpass IR filters are discussed. The pyroelectric IR detector commonly used is fully discussed and characterized. Various schemes for ''false alarms'' have been developed and are also explained. This technology is also used in passive IR based motion sensors for other applications such as lighting control. These applications are also discussed. In addition the paper will discuss new developments in IR surveillance technology such as the use of linear motion sensing arrays. This presentation can be considered a ''primer'' on the art of Passive IR Motion Sensing as applied to Surveillance Technology

  9. Absorption from Neutral Acceptors in GaAs and GaP

    DEFF Research Database (Denmark)

    Christensen, Ove

    1973-01-01

    We present a new calculation of the absorption due to transitions of holes between neutral acceptors and the various valence-band sublevels in GaAs and GaP. The acceptor wave function was approximated by a previously suggested expression for ground-state wave functions appropriate to complicated...... band extrema. Numerical calculations of the absorption from intervalence-band transitions of free holes and neutral acceptors have been performed. Good agreement with experimental results is obtained....

  10. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

    OpenAIRE

    Tomer, D.; Rajput, S.; Hudy, L. J.; Li, C. H.; Li, L.

    2015-01-01

    Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer graphene onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decr...

  11. Imaging performance of a Timepix detector based on semi-insulating GaAs

    Science.gov (United States)

    Zaťko, B.; Zápražný, Z.; Jakůbek, J.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Korytár, D.; Nečas, V.; Žemlička, J.; Mora, Y.; Pichotka, M.

    2018-01-01

    This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 × 256 pixels with a pitch of 55 μm bump-bonded to a Timepix ASIC. The sensor was processed on a 350 μm-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a 241Am radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV γ-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 μm and accelerating voltage up to 80 kV. A 700 μm × 700 μm gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 μm.

  12. Ab initio study of atomic disorder on as-rich GaAs(111)A surface

    Czech Academy of Sciences Publication Activity Database

    Romanyuk, Olexandr; Mutombo, Pingo; Grosse, F.

    2015-01-01

    Roč. 641, Nov (2015), s. 330-335 ISSN 0039-6028 R&D Projects: GA ČR GPP204/10/P028 Grant - others:AVČR(CZ) M100101201 Institutional support: RVO:68378271 Keywords : GaAs(111) * surface reconstructions * surface kinetics * density functional theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.931, year: 2015

  13. Valence band photoemission from in-situ grown GaAs(100)-c(4 x 4)

    Czech Academy of Sciences Publication Activity Database

    Jiříček, Petr; Cukr, Miroslav; Bartoš, Igor; Adell, M.; Strasser, T.; Schattke, W.

    2006-01-01

    Roč. 56, č. 1 (2006), s. 21-26 ISSN 0011-4626. [Symposium on Surface Physics /10./. Praha, 11.07.2005-15.07.2005] R&D Projects: GA ČR(CZ) GA202/04/0994 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaAs(100)-c(4X4) * surface states * band structure * structure plot Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.568, year: 2006

  14. Dielectric constant of GaAs during a subpicosecond laser-induced phase transition

    Science.gov (United States)

    Siegal, Y.; Glezer, E. N.; Mazur, E.

    1994-06-01

    We measured the time evolution of the real and imaginary parts of the dielectric constant of GaAs following femtosecond laser pulse excitation. The data show a collapse of the average optical gap, or average bonding-antibonding energy-level separation. The rate of collapse increases with pump fluence. The decrease in the gap indicates that the pump beam induces a structural transformation from a covalent, tetrahedrally coordinated crystal to a phase with metallic cohesive properties.

  15. High quality GaAs single photon emitters on Si substrate

    International Nuclear Information System (INIS)

    Bietti, S.; Sanguinetti, S.; Cavigli, L.; Accanto, N.; Vinattieri, A.; Minari, S.; Abbarchi, M.; Isella, G.; Frigeri, C.; Gurioli, M.

    2013-01-01

    We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer

  16. Perubahan Sel Imun Pulpitis Akibat Biomodulasi Laser GaA1As

    OpenAIRE

    Nugrohowati Nugrohowati

    2015-01-01

    The objective of this study was to disclose the effect of GaA1As laser biomodulation on pulpitis immune response. The use of laser is still disputable, because of the biomodulation effect of laser remains unclear, particularly on immune response of pulpitis. Laser is  astressor because it produces stress wave that may cause stress on pulp. Modulation of immune system occurred in each variable of immune system component was considred to be GAS (General Adaptation Syndrome). The applied design ...

  17. Lattice location of diffused Zn atoms in GaAs and InP single crystals

    International Nuclear Information System (INIS)

    Chan, L.Y.; Yu, K.M.; Ben-Tzur, M.; Haller, E.E.; Jaklevic, J.M.; Walukiewicz, W.; Hanson, C.M.

    1991-01-01

    We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 10 20 cm -3 for GaAs, but the maximum concentration for InP appears at mid 10 18 cm -3 . The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn 3 P 2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials

  18. Modification of the Absorption Edge of GaAs Arising from Hot-Electron Effects

    DEFF Research Database (Denmark)

    McGroddy, J. C.; Christensen, Ove

    1973-01-01

    We have observed a large enhancement of the electric-field-induced optical absorption arising from hot-electron effects in n-type GaAs at 77 K. The magnitude and field dependence of the enhancement can be approximately accounted for by a theory attributing the effect to broadening of the final...... states of the optical transitions by interaction with the nonequilibrium optical phonons produced by the hot electrons....

  19. Study on the GaAs(110) surface using emitted atom spectrometry

    International Nuclear Information System (INIS)

    Gayone, J.E.; Sanchez, E.A.; Grizzi, O.; Universidad Nacional de Cuyo, Mendoza

    1998-01-01

    The facilities implemented at Bariloche for the ion scattering spectrometry is described, and recent examples of the technique application to determine the atomic structure and the composition of metallic and semiconductor surfaces, pure and with different adsorbates. The surface analysis technique using emitted atom spectrometry is discussed. The sensitivity to the GaAs(110) surface atomic relaxation is presented, and the kinetic of hydrogen adsorption by the mentioned surface is studied

  20. Energetics and Dynamics of GaAs Epitaxial Growth via Quantum Wave Packet Studies

    Science.gov (United States)

    Dzegilenko, Fedor N.; Saini, Subhash (Technical Monitor)

    1998-01-01

    The dynamics of As(sub 2) molecule incorporation into the flat Ga-terminated GaAs(100) surface is studied computationally. The time-dependent Schrodinger equation is solved on a two-dimensional potential energy surface obtained using density functional theory calculations. The probabilities of trapping and subsequent dissociation of the molecular As(sub 2) bond are calculated as a function of beam translational energy and vibrational quantum number of As(sub 2).

  1. TIME-DEPENDENT MOSSBAUER-SPECTROSCOPY AND 119MTE-IMPLANTED GAAS

    NARCIS (Netherlands)

    MO, D; ZHANG, GL; NIESEN, L; Waard , de Hendrik

    1991-01-01

    A new type of time-dependent Mossbauer spectroscopy is proposed and realized on the basis of using the two-step decay (119m)Te --> 113Sb --> Sn-119. For the GaAs samples, implanted with a dose of 110-keV (119m)Te + 10(15) stable Te/cm2 and annealed at 600-degrees-C, the relative intensities of

  2. P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

    2016-07-15

    Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

  3. Optical Orientation of Mn2+ Ions in GaAs in Weak Longitudinal Magnetic Fields

    Science.gov (United States)

    Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Sapega, V. F.; Yakovlev, D. R.; Bayer, M.

    2011-04-01

    We report on optical orientation of Mn2+ ions in bulk GaAs subject to weak longitudinal magnetic fields (B≤100mT). A manganese spin polarization of 25% is directly evaluated by using spin-flip Raman scattering. The dynamical Mn2+ polarization occurs due to the s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence reveals a nontrivial electron spin dynamics, where the oriented Mn2+ ions tend to stabilize the electron spins.

  4. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    International Nuclear Information System (INIS)

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-01-01

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface

  5. Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

    Science.gov (United States)

    Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

    1982-01-01

    The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

  6. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    Science.gov (United States)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  7. A study of the profile of the E3 electron trap in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Kourkoutas, C.D. (TEI Athens (Greece). Dept. of Physics Chemistry and Material Technology); Kovacs, B.; Szentpali, B.; Somogyi, K. (Research Inst. for Technical Physics, Budapest (Hungary)); Euthymiou, P.C. (Athens Univ. (Greece)); Giakoumakis, G.E. (Ioannina Univ. (Greece). Dept. of Physics)

    1994-01-01

    Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 [mu]m, which correspond to the limits of the depletion region under the highest applied reverse bias voltage, while the E3 trap concentration drops off into the same region. (author).

  8. A study of the profile of the E3 electron trap in GaAs

    International Nuclear Information System (INIS)

    Kourkoutas, C.D.; Euthymiou, P.C.; Giakoumakis, G.E.

    1994-01-01

    Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 μm, which correspond to the limits of the depletion region under the highest applied reverse bias voltage, while the E3 trap concentration drops off into the same region. (author)

  9. The passive of reflexive verbs in Icelandic

    Directory of Open Access Journals (Sweden)

    Hlíf Árnadóttir

    2011-10-01

    Full Text Available The Reflexive Passive in Icelandic is reminiscent of the so-called New Passive (or New Impersonal in that the oblique case of a passivized object NP is preserved. As is shown by recent surveys, however, speakers who accept the Reflexive Passive do not necessarily accept the New Passive, whereas conversely, speakers who accept the New Passive do also accept the Reflexive Passive. Based on these results we suggest that there is a hierarchy in the acceptance of passive sentences in Icelandic, termed the Passive Acceptability Hierarchy. The validity of this hierarchy is confirmed by our diachronic corpus study of open access digital library texts from Icelandic journals and newspapers dating from the 19th and 20th centuries (tímarit.is. Finally, we sketch an analysis of the Reflexive Passive, proposing that the different acceptability rates of the Reflexive and New Passives lie in the argument status of the object. Simplex reflexive pronouns are semantically dependent on the verbs which select them, and should therefore be analyzed as syntactic arguments only, and not as semantic arguments of these verbs.

  10. The influence of annealing on manganese implanted GaAs films

    International Nuclear Information System (INIS)

    Buerger, Danilo; Zhou, Shengqiang; Grenzer, Joerg; Reuther, Helfried; Anwand, Wolfgang; Gottschalch, Volker; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Besides low-temperature molecular beam epitaxy, ion implantation provides an alternative route to incorporate Mn into GaAs above the equilibrium solubility limit. Recently, Mn implanted GaAs diluted magnetic semiconductor was obtained by pulsed laser annealing. However, post-implantation annealing can lead to the formation of secondary phases. In order to compare the post-annealing effect, we investigate GaMnAs by implanting up to 6 at% Mn followed by rapid thermal and flashlamp annealing. The structural properties were probed by high resolution X-ray diffraction. The magnetic properties were determined by SQUID measurements. Auger electron spectroscopy has been used to profile the depth distribution of Mn in GaAs after implantation and annealing. We elucidate after implantation a loss of As and that during rapid thermal annealing most of the Mn diffuses towards the surface. Flash lamp annealing prevents out-diffusion, but the recrystallisation efficiency is low. Only the flash lamp annealed samples reveal weak ferromagnetism.

  11. Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

    Science.gov (United States)

    Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

    1996-01-01

    We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

  12. Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

    Directory of Open Access Journals (Sweden)

    Santiago Silvestre

    2015-04-01

    Full Text Available This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A transmission electron microscopy (TEM exploration of the interface reveals the formation of a few nanometer thick SiO2 interface layer and some crystallinity degree of the GaAs layer close to the interface. It was shown that an additional HF etching treatment of the Si substrate improves the short circuit current and degrades the open circuit voltage of the solar cells. Furthermore, an additional thermal annealing step was performed on some selected samples before and after the deposition of an indium tin oxide (ITO film on top of the a-GaAs layer. It was found that the occurrence of surface related defects is reduced in case of a heat treatment performed after the deposition of the ITO layer, which also results in a reduction of the dark saturation current density and resistive losses.

  13. Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

    Science.gov (United States)

    Wang, Qingwen; Klochan, Oleh; Hung, Jo-Tzu; Culcer, Dimitrie; Farrer, Ian; Ritchie, David; Hamilton, Alex

    Electrically defined semiconductor quantum dots are appealing systems for spin manipulation and quantum information processing. Thanks to the weak hyperfine interaction and the strong spin-orbit interaction, heavy-holes in GaAs are promising candidates for all-electrical spin manipulation. However, making stable quantum dots in GaAs has only become possible recently, mainly because of difficulties in device fabrication and device stability. Here we present electrical transport measurements of heavy-holes in a lateral double quantum dot based on a GaAs /AlxGa1 - x As heterostructure. We observe clear Pauli spin blockade and show that the lifting of the spin blockade by an external magnetic field is extremely anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit interaction demonstrate quantitative agreement with experimental results, which indicates that the observed anisotropy can be explained by the anisotropic hole g-factor and the surface Dresselhaus spin-orbit coupling.

  14. Intense electron beams from GaAs photocathodes as a tool for molecular and atomic physics

    International Nuclear Information System (INIS)

    Krantz, Claude

    2009-01-01

    We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at usable cathode lifetimes of 24 h or more. The benefits of the cold electron beam with respect to its application to electron cooling and electron-ion recombination experiments are discussed. Benchmark experiments demonstrate the superior cooling force and energy resolution of the photoelectron beam compared to its thermionic counterparts. The long period of operation allowed to study the long-time behaviour of the GaAs samples during multiple usage cycles at the Electron Target and repeated in-vacuum surface cleaning by atomic hydrogen exposure. An electron emission spectroscopy setup has been implemented at the photocathode preparation chamber of the Electron Target. Among others, this new facility opened the way to a novel application of GaAs (Cs) photocathodes as robust, ultraviolet-driven electron emitters. Based on this principle, a prototype of an electron gun, designed for implementation at the HITRAP setup at GSI, has been built and taken into operation successfully. (orig.)

  15. Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy

    Science.gov (United States)

    Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S. V.

    2001-10-01

    The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below Ec) and at 415 K (0.9 below Ec); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below Ec known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below Ec is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species.

  16. Negative ion formation in the scattering of state-selected NO+ on GaAs(110)

    International Nuclear Information System (INIS)

    Martin, J.S.; Greeley, J.N.; Morris, J.R.; Ferenchok, B.T.; Jacobs, D.C.

    1993-01-01

    A hyperthermal beam of state-selected NO + X 1 Σ + (v,j) impinges on a clean, well characterized GaAs(110) surface. The resulting two-electron transfer products NO-and O- are independently interrogated with a novel ion imaging technique as a function of NO + translational and vibrational energies. The products are shown to have different appearance thresholds, product translational energy distributions, and NO + vibrational energy dependencies. Most notably, vibrational energy is an order of magnitude more effective that translational energy in activating O- formation at a collision energy of 45 eV. The O- angular distribution exhibits a correlation with translational energy which is asymmetric about the surface normal. These results suggest that the probability of O- formation is dependent on the molecules point of impact with the GaAs (110) surface. The dynamical features of the NO + /GaAs(110) reaction will be discussed in terms of the three independent coordinates addressed in this experiment: the diatom internuclear separation, the molecule-surface distance, and the surface impact parameter

  17. Towards low-dimensional hole systems in Be-doped GaAs nanowires

    DEFF Research Database (Denmark)

    Ullah, A. R.; Gluschke, J. G.; Jeppesen, Peter Krogstrup

    2017-01-01

    -gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good......GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly confined 0D and 1D hole systems with strong spin–orbit effects, motivating...... our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top...

  18. Polaron binding energy and effective mass in the GaAs film

    International Nuclear Information System (INIS)

    Wu Zhenhua; Yan Liangxing; Tian Qiang; Li Hua; Liu Bingcan

    2012-01-01

    The binding energy and effective mass of a polaron in a GaAs film deposited on the Al 0.3 Ga 0.7 As substrate are studied theoretically by using the fractional-dimensional space approach. Our calculations show that the polaron binding energy and mass shift decrease monotonously with increasing the film thickness. For the film thicknesses with L w ≤ 70Å and the substrate thicknesses with L b ≤ 200Å, the different values of the substrate thickness influence the polaron binding energy and mass shift in the GaAs film. The polaron binding energy and mass shift increase monotonously with increasing the substrate thickness. For the film thickness with L w ≥ 70Å or the substrate thicknesses with L b ≤ 200Å, the different values of the substrate thickness have no significant influence on the polaron binding energy and mass shift in the GaAs film deposited on the Al 0.3 Ga 0.7 As substrate.

  19. Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

    Science.gov (United States)

    Debehets, J.; Homm, P.; Menghini, M.; Chambers, S. A.; Marchiori, C.; Heyns, M.; Locquet, J. P.; Seo, J. W.

    2018-05-01

    In this paper, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate analyzer and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-levels. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-level pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.

  20. GaAs nanowire array solar cells with axial p-i-n junctions.

    Science.gov (United States)

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

  1. Tunneling effect on double potential barriers GaAs and PbS

    Science.gov (United States)

    Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

    2018-04-01

    A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

  2. Intense electron beams from GaAs photocathodes as a tool for molecular and atomic physics

    Energy Technology Data Exchange (ETDEWEB)

    Krantz, Claude

    2009-10-28

    We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at usable cathode lifetimes of 24 h or more. The benefits of the cold electron beam with respect to its application to electron cooling and electron-ion recombination experiments are discussed. Benchmark experiments demonstrate the superior cooling force and energy resolution of the photoelectron beam compared to its thermionic counterparts. The long period of operation allowed to study the long-time behaviour of the GaAs samples during multiple usage cycles at the Electron Target and repeated in-vacuum surface cleaning by atomic hydrogen exposure. An electron emission spectroscopy setup has been implemented at the photocathode preparation chamber of the Electron Target. Among others, this new facility opened the way to a novel application of GaAs (Cs) photocathodes as robust, ultraviolet-driven electron emitters. Based on this principle, a prototype of an electron gun, designed for implementation at the HITRAP setup at GSI, has been built and taken into operation successfully. (orig.)

  3. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

    Science.gov (United States)

    Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

    2010-05-20

    Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

  4. High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Sanz-Hervas, A.; Aguilar, M. [Madrid, Univ. (Spain). Dept. Tecnologia Electronica. E.T.S.I. Telecomunicacion; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J. [Valladolid, Real de Burgos Univ. (Spain). Dept. Teoria de la Senal u Comunicaciones e Ingegneria Telematica. E.T.S.I. Telecomunicacion; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E. [Madrid, Univ. (Spain). Dept. Ingegnieria Electronica. E.T.S.I. Telecomunicacion

    1997-02-01

    In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224{+-} reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies.

  5. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

    Science.gov (United States)

    Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

    2016-06-01

    Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

  6. High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

    International Nuclear Information System (INIS)

    Sanz-Hervas, A.; Aguilar, M.; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J.; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E.

    1997-01-01

    In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224± reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies

  7. Passive film growth on carbon steel and its nanoscale features at various passivating potentials

    International Nuclear Information System (INIS)

    Li, Yuan; Cheng, Y. Frank

    2017-01-01

    Highlights: • Imaged the topography of passivated steel at various film-forming potentials. • Characterized the nanoscale features of passive films. • Determined the composition of passive films formed at various potentials. - Abstract: In this work, the passivation and topographic sub-structure of passive films on a carbon steel in a carbonate/bicarbonate solution was characterized by electrochemical measurements, atomic force microscopy and X-ray photoelectron spectroscopy. When passivating at a potential near the active-passive transition, the film contains the mixture of Fe_3O_4, Fe_2O_3 and FeOOH, with numerous nanoscale features. As the film-forming potential shifts positively, the passive film becomes more compact and the nanoscale features disappear. When the film is formed at a passive potential where the oxygen evolution is enabled, the content of FeOOH in the film increases, resulting in an amorphous topography and reduced corrosion resistance.

  8. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    Energy Technology Data Exchange (ETDEWEB)

    Boardman, D

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  9. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    International Nuclear Information System (INIS)

    Boardman, D.

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  10. Structural and morphological TEM characterization of GaAs based nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Soda, Marcello

    2012-02-03

    The question of a structural and morphological characterization of GaAs based nanowires is the research interest of this thesis. For this purpose standard and analytical transmission electron microscopy techniques were employed. New investigation methodologies are introduced in order to obtain a reliable interpretation of the results. The principal motivation on developing a new investigation method is the necessity to relate the results of crystal structure and morphology characterizations to microscopic and NW-specific parameters and not to macroscopic and general growth parameters. This allows a reliable comparison of NW characteristics and enhances the comprehension of their growth mechanism.The analysis of the results on crystal structure investigations, assuming this new perspective, delivers the fundamental finding that the axial growth of Au-assisted GaAs NWs can change in a pseudo Ga-assisted growth due to a non steady-state regime of the Ga accumulation process in the liquid droplet. The attempt to associate the observed crystal structures to one of these two growth modes reveals that zinc blende segments are most probably generated when a pseudo Ga-assisted growth occurs. This experimental evidence is in accordance with investigations developed by Glas et al. and Spirkoska et al. and with the current understanding of the NW growth mechanism and unifies the interpretation of catalytic growth of GaAs NWs. A Mn doped GaAs shell deposited at low temperature on core GaAs NWs is characterized for the first time. The growth is found to be epitaxial and to confer the quality of the core crystal to the shell crystal. As a consequence a high stacking fault density of the core NW limits the temperature of the shell growth due to the formation of clusters. Cross sections of (Ga,Mn)As shells are investigated. Simple kinetic and thermodynamical considerations lead to the conclusion of morphological instability of the low temperature radial growth. Analytical

  11. The passive-aggressive organization.

    Science.gov (United States)

    Kaplan, Robert S; Norton, David P

    2005-10-01

    Passive-aggressive organizations are friendly places to work: People are congenial, conflict is rare, and consensus is easy to reach. But, at the end of the day, even the best proposals fail to gain traction, and a company can go nowhere so imperturbably that it's easy to pretend everything is fine. Such companies are not necessarily saddled with mulishly passive-aggressive employees. Rather, they are filled with mostly well-intentioned people who are the victirms of flawed processes and policies. Commonly, a growing company's halfhearted or poorly thought-out attempts to decentralize give rise to multiple layers of managers, whose authority for making decisions becomes increasingly unclear. Some managers, as a result, hang back, while others won't own up to the calls they've made, inviting colleagues to second-guess or overturn the decisions. In such organizations, information does not circulate freely, and that makes it difficult for workers to understand the impact of their actions on company performance and for managers to correctly appraise employees' value to the organization. A failure to accurately match incentives to performance stifles initiative, and people do just enough to get by. Breaking free from this pattern is hard; a long history of seeing corporate initiatives ignored and then fade away tends to make people cynical. Often it's best to bring in an outsider to signal that this time things will be different. He or she will need to address every obstacle all at once: clarify decision rights; see to it that decisions stick; and reward people for sharing information and adding value, not for successfully negotiating corporate politics. If those steps are not taken, it's only a matter of time before the diseased elements of a passive-aggressive organization overwhelm the remaining healthy ones and drive the company into financial distress.

  12. Electro-optic investigation of the n-alkanethiol GaAs(001) interface: Surface phenomena and applications to photoluminescence-based biosensing

    Science.gov (United States)

    Marshall, Gregory M.

    Semiconductor surfaces coupled to molecular structures derived from organic chemistry form the basis of an emerging class of field-effect devices. In addition to molecular electronics research, these interfaces are developed for a variety of sensor applications in the electronic and optical domains. Of practical interest are self-assembled monolayers (SAMs) comprised of n-alkanethiols [HS(CH2)n], which couple to the GaAs(001) surface through S-GaAs covalent bond formation. These SAMs offer potential functionality in terms of the requisite sensor chemistry and the passivation effect such coupling is known to afford. In this thesis, the SAM-GaAs interface is investigated in the context of a photonic biosensor based on photoluminescence (PL) variation. The scope of the work is categorized into three parts: i) the structural and compositional analysis of the surface using X-ray photoelectron spectroscopy (XPS), ii) the investigation of electronic properties at the interface under equilibrium conditions using infrared (IR) spectroscopy, the Kelvin probe method, and XPS, and iii) the analysis of the electro-optic response under steady-state photonic excitation, specifically, the surface photovoltage (SPV) and PL intensity. Using a partial overlayer model of angle-resolved XPS spectra in which the component assignments are shown to be quantitatively valid, the coverage fraction of methyl-terminated SAMs is shown to exceed 90%. Notable among the findings are a low-oxide, Ga-rich surface with elemental As present in sub-monolayer quantities consistent with theoretical surface morphologies. Modal analysis of transmission IR spectra show that the SAM molecular order is sufficient to support a Beer-Lambert determination of the IR optical constants, which yields the observation of a SAM-specific absorbance enhancement. By correlation of the IR absorbance with the SAM dipole layer potential, the enhancement mechanism is attributed to the vibrational moments added by the

  13. Architectural Qualities in Passive Houses

    DEFF Research Database (Denmark)

    Brunsgaard, Camilla

    2012-01-01

    that it is possible to build this type of houses, but the knowledge and discussion about the architectural quality in the buildings is hardly present. The question is if the strategies for optimising energy use and indoor environment collide with the architectural qualities of buildings. This paper brings forth...... this discussion based in literature and four case studies. The paper highlights cases on how passive strategies for optimising energy use and indoor environment affect, restrict, inspire or create possibilities for the architectural expression and there through the architectural quality of the building....

  14. Passive Containment DataSet

    Science.gov (United States)

    This data is for Figures 6 and 7 in the journal article. The data also includes the two EPANET input files used for the analysis described in the paper, one for the looped system and one for the block system.This dataset is associated with the following publication:Grayman, W., R. Murray , and D. Savic. Redesign of Water Distribution Systems for Passive Containment of Contamination. JOURNAL OF THE AMERICAN WATER WORKS ASSOCIATION. American Water Works Association, Denver, CO, USA, 108(7): 381-391, (2016).

  15. Passive longitudinal phase space linearizer

    Directory of Open Access Journals (Sweden)

    P. Craievich

    2010-03-01

    Full Text Available We report on the possibility to passively linearize the bunch compression process in electron linacs for the next generation x-ray free electron lasers. This can be done by using the monopole wakefields in a dielectric-lined waveguide. The optimum longitudinal voltage loss over the length of the bunch is calculated in order to compensate both the second-order rf time curvature and the second-order momentum compaction terms. Thus, the longitudinal phase space after the compression process is linearized up to a fourth-order term introduced by the convolution between the bunch and the monopole wake function.

  16. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang; Li, Guoqiang

    2014-01-01

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In x Ga 1−x As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In x Ga 1−x As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In x Ga 1−x As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In x Ga 1−x As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In x Ga 1−x As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In x Ga 1−x As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates

  17. Single-Crystal Y2O3 Epitaxially on GaAs(001 and (111 Using Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Y. H. Lin

    2015-10-01

    Full Text Available Single-crystal atomic-layer-deposited (ALD Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE GaAs(001-4 \\(\\times\\ 6 and GaAs(111A-2 \\(\\times\\ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \\textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are of a cubic phase and have (110 as the film normal, with the orientation relationship being determined: Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(110\\[\\(001\\][\\(\\overline{1}10\\]//GaAs(\\(001\\[\\(110\\][\\(1\\overline{1}0\\]. On GaAs(\\(111\\A, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are also of a cubic phase with (\\(111\\ as the film normal, having the orientation relationship of Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(111\\[\\(2\\overline{1}\\overline{1}\\] [\\(01\\overline{1}\\]//GaAs (\\(111\\ [\\(\\overline{2}11\\][\\(0\\overline{1}1\\]. The relevant orientation for the present/future integrated circuit platform is (\\(001\\. The ALD-Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\/GaAs(\\(001\\-4 \\(\\times\\ 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit is low of ~10\\(^{12}\\ cm\\(^{−2}\\eV\\(^{−1}\\ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\\(_{it}\\ are the lowest ever achieved among all the ALD-oxides on GaAs(\\(001\\.

  18. Measurement and Treatment of Passive Muscle Stiffness

    DEFF Research Database (Denmark)

    Kirk, Henrik

    , which aimed to investigate: 1) The development of a clinical method to evaluate and distinguish neural (reflex mediated stiffness) and non-neural (passive muscle stiffness) components of muscle stiffness in adults with CP by objective and reliable measurements. 2) The association between increased...... and reliability of the method, and argue for the use of the method in the clinical practice. The device is able to distinguish between passive muscle stiffness and reflex-mediated stiffness in subjects with CP. It shows good high intrarater and interrater reliability in evaluation of passive muscle stiffness...... to measure muscle stiffness, and distinguish between passive muscle stiffness and reflex-mediated stiffness. Furthermore, it is a reliable device to measure changes in passive ROM. Treatment of passive muscle stiffness should be directed towards intense training, comprising many repetitions with a functional...

  19. Forekomsten af passiv rygning i Danmark

    DEFF Research Database (Denmark)

    Kristensen, T S; Møller, L; Holstein, B E

    1990-01-01

    The occurrence of passive smoking in the adult population in Denmark has not been described previously. This article publishes data from three investigations all of which were carried out in 1987. One was an interview investigation of a random section of the Danish population carried out by the D...... inconvenienced by passive smoking at work and a corresponding fraction had taken steps to reduce the extent of passive smoking in their daily life. Udgivelsesdato: 1990-Aug-27...... showed consistent results as regards the occurrence of passive smoking among adult Danes. About 12% of non-smokers were exposed to passive smoking for at least eight hours and 40% for at least one hour daily. Altogether 73% were exposed to passive smoking daily. About one third of the non-smokers were...

  20. Lateral n-p-n bipolar transistors by ion implantation into semi-insulating GaAs

    International Nuclear Information System (INIS)

    Canfield, P.; Forbes, L.

    1988-01-01

    GaAs bipolar transistors have not seen the major development effort that GaAs MESFETs have due primarily to the short minority carrier lifetimes in GaAs. The short minority carrier lifetimes require that the base region be very thin which, if done by implantation, requires that the doping be high to obtain a well defined base profile. These requirements are very difficult to achieve in GaAs and typically, if high current gain and high speed are desired for a bipolar technology, then heterostructure bipolars are the appropriate technology, although the cost of heterostructure devices will be prohibitive for some time to come. For applications requiring low current gain, more modest fabrication rules can be followed. Lateral bipolars are particularly attractive since they would be easier to fabricate than a planar bipolar or a heterojunction bipolar. Lateral bipolars do not require steps or deep contacts to make contact with the subcollector or highly doped very thin epilayers for the base region and they can draw upon the semi-insulating properties of the GaAs substrates for device isolation. Bipolar transistors are described and shown to work successfully. (author)

  1. Removal of NO {sub x} by microwave reactor with ammonium bicarbonate and Ga-A zeolites at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Z.S. [School of Environmental Science and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)]. E-mail: weizaishan98@163.com; Du, Z.Y. [School of Light Industry and Chemical Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Lin, Z.H. [School of Environmental Science and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); He, H.M. [School of Environmental Science and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Qiu, R.L. [School of Environmental Science and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

    2007-08-15

    Microwave reactor with the mixture of ammonium bicarbonate (NH{sub 4}HCO{sub 3}) and Ga-A zeolites was set up to study the removal of nitrogen oxides (NO {sub x} ) from waste gas with excess oxygen concentration (14-19%) at low temperature (80-120 deg. C). The results showed that the microwave reactor filled with NH{sub 4}HCO{sub 3} and Ga-A zeolites could reduce NO {sub x} to nitrogen with the best purifying efficiency of 95.45% and the best denitrification amount of 89.28 mg h{sup -1}. The optimal microwave power and residence time (RT) on denitrification was 259-280 W and 0.259 s, respectively. Microwave denitrification effect of the experiment using ammonium bicarbonate and Ga-A zeolites was much higher than that using ammonium bicarbonate or Ga-A zeolites only. The mechanism for microwave-induced NO {sub x} reduction can be explained as the microwave-induced catalytic reaction between NO {sub x} and ammonium bicarbonate with Ga-A zeolites being the catalyst and microwave absorbent.

  2. Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

    Energy Technology Data Exchange (ETDEWEB)

    He, Yunrui; Wang, Jun, E-mail: wangjun12@bupt.edu.cn; Hu, Haiyang; Wang, Qi; Huang, Yongqing; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

    2015-05-18

    The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

  3. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

    International Nuclear Information System (INIS)

    Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

    2012-01-01

    We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

  4. Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

    Science.gov (United States)

    Li, Lixia; Pan, Dong; Yu, Xuezhe; So, Hyok; Zhao, Jianhua

    2017-10-01

    Self-catalyzed GaAs nanowires (NWs) are grown on Si (111) substrates by molecular-beam epitaxy. The effect of different closing sequences of the Ga and As cell shutters on the morphology and structural phase of GaAs NWs is investigated. For the sequences of closing the Ga and As cell shutters simultaneously or closing the As cell shutter 1 min after closing the Ga cell shutter, the NWs grow vertically to the substrate surface. In contrast, when the As cell shutter is closed first, maintaining the Ga flux is found to be critical for the following growth of GaAs NWs, which can change the growth direction from [111] to . The evolution of the morphology and structural phase transition at the tips of these GaAs NWs confirm that the triple-phase-line shift mode is at work even for the growth with different cell shutter closing sequences. Our work will provide new insights for better understanding of the growth mechanism and realizing of the morphology and structure control of the GaAs NWs. Project supported partly by the MOST of China (No. 2015CB921503), the National Natural Science Foundation of China (Nos. 61504133, 61334006, 61404127), and Youth Innovation Promotion Association, CAS (No. 2017156).

  5. Columbia County Habitat for Humanity Passive Townhomes

    Energy Technology Data Exchange (ETDEWEB)

    None, None

    2016-03-01

    Columbia County Habitat for Humanity (CCHH) (New York, Climate Zone 5A) built a pair of townhomes to Passive House Institute U.S. (PHIUS+ 2015) criteria to explore approaches for achieving Passive House performance (specifically with respect to exterior wall, space-conditioning, and ventilation strategies) within the labor and budget context inherent in a Habitat for Humanity project. CCHH’s goal is to eventually develop a cost-justified Passive House prototype design for future projects.

  6. Passive Nuclear Plants Program (UPDATE)

    International Nuclear Information System (INIS)

    Chimeno, M. A.

    1998-01-01

    The light water passive plants program (PCNP), today Advanced Nuclear Power Plants Program (PCNA), was constituted in order to reach the goals of the Spanish Electrical Sector in the field of advanced nuclear power plants, optimize the efforts of all Spanish initiatives, and increase joint presence in international projects. The last update of this program, featured in revision 5th of the Program Report, reflects the consolidation of the Spanish sector's presence in International programs of the advanced power plants on the basis of the practically concluded American ALWR program. Since the beginning of the program , the PCNP relies on financing from the Electrical sector, Ocide, SEPI-Endesa, Westinghouse, General Electric, as well as from the industrial cooperators, Initec, UTE (Initec- Empresarios Agrupados), Ciemat, Enusa, Ensa and Tecnatom. The program is made up of the following projects, already concluded: - EPRI's Advanced Light Water Plants Certification Project - Westinghouse's AP600 Project - General Electric's SBWR Project (presently paralyzed) and ABWR project Currently, the following project are under development, at different degrees of advance: - EPP project (European Passive Plant) - EBWR project (European Advanced Boiling Water Reactor)

  7. A Portable Passive Physiotherapeutic Exoskeleton

    Directory of Open Access Journals (Sweden)

    Dasheek Naidu

    2012-10-01

    Full Text Available The public healthcare system in South Africa is in need of urgent attention in no small part because there has been an escalation in the number of stroke victims which could be due to the increase in hypertension in this urbanizing society. There is a growing need for physiotherapists and occupational therapists in the country, which is further hindered by the division between urban and rural areas. A possible solution is a portable passive physiotherapeutic exoskeleton device. The exoskeleton device has been formulated to encapsulate methodologies that enable the anthropomorphic integration between a biological and mechatronic limb. A physiotherapeutic mechanism was designed to be portable and adjustable, without limiting the spherical motion and workspace of the human arm. The exoskeleton was designed to be portable in the sense that it could be transported geographically. It is a complete device allowing for motion in the shoulder, elbow, wrist and hand joints. The inverse kinematics was solved iteratively via the Damped Least Squares (DLS method. The electronic and computer system allowed for professional personnel to either change an individual joint or a combination of joints angles via the kinematic models. A ramp PI controller was established to provide a smooth response to simulate the passive therapy motion.

  8. Liberal theory of passive citizenship

    Directory of Open Access Journals (Sweden)

    Salatić Stevan

    2013-01-01

    Full Text Available In this seminar paper I will focus on the analysis of liberal theory of citizenship. The focus of the study will be on the liberal-communitarian dispute in the theory of citizenship, with main ideas of the most important representatives of liberal discourse in the field of citizenship also being discussed. I will look more closely at the ideas of T.H. Marshall, as the most significant writer of liberal orthodoxy in the second half of the twentieth century, his contribution to liberal theory of passive citizenship, but I will also deal with the ideas of his biggest critics, both from the aspect of liberalism and from the aspect of communitarianism, including Anthony Giddens, Claus Offe, Michael Mann, Barrington Moore and Brian Turner. The emphasis will be on Marshall's term 'conquest of citizenship', as well as on the derivation of various theories of state from the obtained rights achieved through the expansion of the concept of citizenship. Finally, I will say something about modern obstacles to theories of passive citizenship derived from the communitarian school.

  9. Passive propulsion in vortex wakes

    Science.gov (United States)

    Beal, D. N.; Hover, F. S.; Triantafyllou, M. S.; Liao, J. C.; Lauder, G. V.

    A dead fish is propelled upstream when its flexible body resonates with oncoming vortices formed in the wake of a bluff cylinder, despite being well outside the suction region of the cylinder. Within this passive propulsion mode, the body of the fish extracts sufficient energy from the oncoming vortices to develop thrust to overcome its own drag. In a similar turbulent wake and at roughly the same distance behind a bluff cylinder, a passively mounted high-aspect-ratio foil is also shown to propel itself upstream employing a similar flow energy extraction mechanism. In this case, mechanical energy is extracted from the flow at the same time that thrust is produced. These results prove experimentally that, under proper conditions, a body can follow at a distance or even catch up to another upstream body without expending any energy of its own. This observation is also significant in the development of low-drag energy harvesting devices, and in the energetics of fish dwelling in flowing water and swimming behind wake-forming obstacles.

  10. Utility requirements for advanced LWR passive plants

    International Nuclear Information System (INIS)

    Yedidia, J.M.; Sugnet, W.R.

    1992-01-01

    LWR Passive Plants are becoming an increasingly attractive and prominent option for future electric generating capacity for U.S. utilities. Conceptual designs for ALWR Passive Plants are currently being developed by U.S. suppliers. EPRI-sponsored work beginning in 1985 developed preliminary conceptual designs for a passive BWR and PWR. DOE-sponsored work from 1986 to the present in conjunction with further EPRI-sponsored studies has continued this development to the point of mature conceptual designs. The success to date in developing the ALWR Passive Plant concepts has substantially increased utility interest. The EPRI ALWR Program has responded by augmenting its initial scope to develop a Utility Requirements Document for ALWR Passive Plants. These requirements will be largely based on the ALWR Utility Requirements Document for Evolutionary Plants, but with significant changes in areas related to the passive safety functions and system configurations. This work was begun in late 1988, and the thirteen-chapter Passive Plant Utility Requirements Document will be completed in 1990. This paper discusses the progress to date in developing the Passive Plant requirements, reviews the top-level requirements, and discusses key issues related to adaptation of the utility requirements to passive safety functions and system configurations. (orig.)

  11. Multiple mechanisms quench passive spiral galaxies

    Science.gov (United States)

    Fraser-McKelvie, Amelia; Brown, Michael J. I.; Pimbblet, Kevin; Dolley, Tim; Bonne, Nicolas J.

    2018-02-01

    We examine the properties of a sample of 35 nearby passive spiral galaxies in order to determine their dominant quenching mechanism(s). All five low-mass (M⋆ environments. We postulate that cluster-scale gas stripping and heating mechanisms operating only in rich clusters are required to quench low-mass passive spirals, and ram-pressure stripping and strangulation are obvious candidates. For higher mass passive spirals, while trends are present, the story is less clear. The passive spiral bar fraction is high: 74 ± 15 per cent, compared with 36 ± 5 per cent for a mass, redshift and T-type matched comparison sample of star-forming spiral galaxies. The high mass passive spirals occur mostly, but not exclusively, in groups, and can be central or satellite galaxies. The passive spiral group fraction of 74 ± 15 per cent is similar to that of the comparison sample of star-forming galaxies at 61 ± 7 per cent. We find evidence for both quenching via internal structure and environment in our passive spiral sample, though some galaxies have evidence of neither. From this, we conclude no one mechanism is responsible for quenching star formation in passive spiral galaxies - rather, a mixture of mechanisms is required to produce the passive spiral distribution we see today.

  12. Inherent/passive safety for fusion

    International Nuclear Information System (INIS)

    Piet, S.J.

    1986-06-01

    The concept of inherent or passive passive safety for fusion energy is explored, defined, and partially quantified. Four levels of safety assurance are defined, which range from true inherent safety to passive safety to protection via active engineered safeguard systems. Fusion has the clear potential for achieving inherent or passive safety, which should be an objective of fusion research and design. Proper material choice might lead to both inherent safety and high mass power density, improving both safety and economics. When inherent safety is accomplished, fusion will be well on the way to achieving its ultimate potential and to be truly different and superior

  13. Passive Wireless SAW Humidity Sensors, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal describes the preliminary development of passive wireless surface acoustic wave (SAW) based humidity sensors for NASA application to distributed...

  14. Passive cavitation imaging with ultrasound arrays.

    Science.gov (United States)

    Salgaonkar, Vasant A; Datta, Saurabh; Holland, Christy K; Mast, T Douglas

    2009-12-01

    A method is presented for passive imaging of cavitational acoustic emissions using an ultrasound array, with potential application in real-time monitoring of ultrasound ablation. To create such images, microbubble emissions were passively sensed by an imaging array and dynamically focused at multiple depths. In this paper, an analytic expression for a passive image is obtained by solving the Rayleigh-Sommerfield integral, under the Fresnel approximation, and passive images were simulated. A 192-element array was used to create passive images, in real time, from 520-kHz ultrasound scattered by a 1-mm steel wire. Azimuthal positions of this target were accurately estimated from the passive images. Next, stable and inertial cavitation was passively imaged in saline solution sonicated at 520 kHz. Bubble clusters formed in the saline samples were consistently located on both passive images and B-scans. Passive images were also created using broadband emissions from bovine liver sonicated at 2.2 MHz. Agreement was found between the images and source beam shape, indicating an ability to map therapeutic ultrasound beams in situ. The relation between these broadband emissions, sonication amplitude, and exposure conditions are discussed.

  15. Hybrid Active-Passive Radiation Shielding System

    Data.gov (United States)

    National Aeronautics and Space Administration — A radiation shielding system is proposed that integrates active magnetic fields with passive shielding materials. The objective is to increase the shielding...

  16. Universality in passively advected hydrodynamic fields : the case of a passive vector with pressure

    NARCIS (Netherlands)

    Benzi, R.; Biferale, L.; Toschi, F.

    2001-01-01

    Universality of statistical properties of passive quantities advected by turbulent velocity fields at changing the passive forcing mechanism is discussed. In particular, we concentrate on the statistical properties of an hydrodynamic system with pressure. We present theoretical arguments and

  17. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Buriakov, A. M.; Bilyk, V. R.; Mishina, E. D. [Moscow Technological University “MIREA” (Russian Federation); Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Vasil’evskii, I. S. [National Research Nuclear University “MEPhI” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)

    2017-04-15

    The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

  18. Inducer-independent production of pectinases in Aspergillus niger by overexpression of the D-galacturonic acid-responsive transcription factor gaaR.

    Science.gov (United States)

    Alazi, Ebru; Knetsch, Tim; Di Falco, Marcos; Reid, Ian D; Arentshorst, Mark; Visser, Jaap; Tsang, Adrian; Ram, Arthur F J

    2018-03-01

    The transcription factor GaaR is needed for the expression of genes required for pectin degradation and transport and catabolism of the main degradation product, D-galacturonic acid (GA) in Aspergillus niger. In this study, we used the strong constitutive gpdA promoter of Aspergillus nidulans to overexpress gaaR in A. niger. Overexpression of gaaR resulted in an increased transcription of the genes encoding pectinases, (putative) GA transporters, and catabolic pathway enzymes even under non-inducing conditions, i.e., in the absence of GA. Exoproteome analysis of a strain overexpressing gaaR showed that this strain secretes highly elevated levels of pectinases when grown in fructose. The genes encoding exo-polygalacturonases were found to be subjected to CreA-mediated carbon catabolite repression, even in the presence of fructose. Deletion of creA in the strain overexpressing gaaR resulted in a further increase in pectinase production in fructose. We showed that GaaR localizes mainly in the nucleus regardless of the presence of an inducer, and that overexpression of gaaR leads to an increased concentration of GaaR in the nucleus.

  19. Optical Properties of InGaAs/ GaAs Multi Quantum Wells Structure Grown By Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Mohd Sharizal Alias; Mohd Fauzi Maulud; Mohd Razman Yahya; Abdul Fatah Awang Mat; Suomalainen, Soile

    2008-01-01

    Inclusive analysis on the optical characteristics of InGaAs/ GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/ GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/ GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication. (author)

  20. Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy.

    Science.gov (United States)

    Tong, C Z; Yoon, S F

    2008-09-10

    We have directly imaged the formation of a GaAs quantum ring (QR) using droplet epitaxy followed by annealing in arsenic ambient. Based on the atomic force micrograph measurement and the analysis of surface energy, we determine that the formation of self-assembled GaAs QRs is due to the gallium atom's diffusion and crystallization driven by the gradient of surface energy. The phenomenon that GaAs is etched by the gallium droplets is reported and analyzed. It has been demonstrated that the epitaxy layers, such as AlAs and InGaP, can be used as the etching stop layer and hence can be used to control the shape and height of the QRs.

  1. A comparative study of Co thin film deposited on GaAs (1 0 0) and glass substrates

    International Nuclear Information System (INIS)

    Sharma, A.; Brajpuriya, R.; Tripathi, S.; Jain, D.; Dubey, R.; Shripathi, T.; Chaudhari, S.M.

    2006-01-01

    The structural, magnetic and transport properties of Co/GaAs (1 0 0) and Co/glass thin films have been investigated. The structural measurements reveal the crystalline nature of Co thin film grown on GaAs, while microcrystalline nature in case of glass substrate. The film grown on GaAs shows higher coercivity (49.0 G), lower saturation magnetization (3.65 x 10 -4 ) and resistivity (8 μΩ cm) values as compared to that on glass substrate (22 G, 4.77 x 10 -4 and 18 μΩ cm). The grazing incidence X-ray reflectivity and photoemission spectroscopy results show the interaction between Co and GaAs at the interface, while the Co layer grown on glass remains unaffected. These observed results are discussed and interpreted in terms of different growth morphologies and structures of as grown Co thin film on both substrates

  2. Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE

    International Nuclear Information System (INIS)

    Ooike, N.; Motohisa, J.; Fukui, T.

    2004-01-01

    We propose and demonstrate a novel self-aligning process for fabricating the tungsten (W) gate electrode of GaAs nanowire FETs by using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) where SiO 2 /W composite films are used to mask the substrates. First, to study the growth process and its dependence on mask materials, GaAs wire structures were grown on masked substrates partially covered with a single W layer or SiO 2 /W composite films. We found that lateral growth over the masked regions could be suppressed when a wire along the [110] direction and a SiO 2 /W composite mask were used. Using this composite mask, we fabricated GaAs narrow channel FETs using W as a Schottky gate electrode, and we were able to observe FET characteristics at room temperature

  3. Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

    2011-01-01

    Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

  4. Radiation-induced effects in GaAs thin-film optical (10.6 μm) waveguides

    International Nuclear Information System (INIS)

    Share, S.; Epstein, A.S.; Monse, T.; Chang, W.S.C.; Chang, M.S.

    1976-01-01

    Two types of GaAs thin-film optical waveguide structures operating at 10.6 μm were examined before and after exposure to neutron and γ irradiation. The attenuation rate of the GaAs/n + -GaAs structure was particularly sensitive to neutron irradiation of 10 13 cm -2 and exhibited postirradiation annealing at 150 0 C. This is in contrast to the relative neutron irradiation insensitivity of a GaAs/GaAs 1 /sub -//subx/P/subx//n + -GaAs structure. The effect of γ radiation is less pronounced for both structures. The radiation-induced changes are discussed in terms of free-carrier absorption, index of refraction, scattering centers, and absorption by complexes

  5. Diffraction anomalous fine-structure study of strained Ga1-xInxAs on GaAs(001)

    International Nuclear Information System (INIS)

    Woicik, J.C.; Cross, J.O.; Bouldin, C.E.; Ravel, B.; Pellegrino, J.G.; Steiner, B.; Bompadre, S.G.; Sorensen, L.B.; Miyano, K.E.; Kirkland, J.P.

    1998-01-01

    Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442±0.005thinsp Angstrom in a buried, 213-Angstrom-thick Ga 0.785 In 0.215 As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.013±0.005thinsp Angstrom relative to the Ga-As bond length in bulk Ga 1-x In x As of the same composition. Together with recent extended x-ray-absorption fine-structure measurements performed at the In K edge [Woicik et al., Phys. Rev. Lett. 79, 5026 (1997)], excellent agreement is found with the uniform bond-length distortion model for strained-layer semiconductors on (001) substrates. copyright 1998 The American Physical Society

  6. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Dutta, P.; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-01-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10 7  cm −2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  7. Rapid capless annealing of28Si,64Zn, and9Be implants in GaAs

    Science.gov (United States)

    Liu, S. G.; Narayan, S. Y.

    1984-11-01

    We report the use of tungsten-halogen lamps for rapid (-10 s) thermal annealing of ion-implanted (100) GaAs under AsH3/Ar and N2 atmospheres. Annealing under flowing AsH3/Ar was carried out without wafer encapsulation. Rapid capless annealing activated implants in GaAs with good mobility and surface morphology. Typical mobilities were 3700 4500 cm2/V-s for n-layers with about 2×1017cm-3 carrier concentration and 50 150 cm2/v-s for 0.1 5xl019 cm-3 doped p-layers. Rapid thermal annealing was performed in a vertical quartz tube where different gases (N2, AsH3/H2, AsH3/Ar) can be introduced. Samples were encapsulated with SiO when N2 was used. Tungsten-halogen lamps of 600 or 1000 W were utilized for annealing GaAs wafers ranging from 1 to 10 cm2 in area and 0.025 to 0.040 cm in thickness. The transient temperature at the wafer position was monitored using a fine thermocouple. We carried out experiments for energies of 30 to 200 keV, doses of 2×1012 to 1×1015 cm-2, and peak temperatures ranging from 600 to 1000‡C. Most results quoted are in the 700 to 870‡C temperature range. Data on implant conditions, optimum anneal conditions, electrical characteristics, carrier concentration profiles, and atomic profiles of the implanted layers are described.

  8. Polarization and charge limit studies of strained GaAs photocathodes

    International Nuclear Information System (INIS)

    Saez, P.J.

    1997-03-01

    This thesis presents studies on the polarization and charge limit behavior of electron beams produced by strained GaAs photocathodes. These photocathodes are the source of high-intensity, high-polarization electron beams used for a variety of high-energy physics experiments at the Stanford Linear Accelerator Center. Recent developments on P-type, biaxially-strained GaAs photocathodes have produced longitudinal polarization in excess of 80% while yielding beam intensities of ∼ 2.5 A/cm 2 at an operating voltage of 120 kV. The SLAC Gun Test Laboratory, which has a replica of the SLAC injector, was upgraded with a Mott polarimeter to study the polarization properties of photocathodes operating in a high-voltage DC gun. Both the maximum beam polarization and the maximum charge obtainable from these photocathodes have shown a strong dependence on the wavelength of illumination, on the doping concentration, and on the negative electron affinity levels. The experiments performed for this thesis included studying the effects of temperature, cesiation, quantum efficiency, and laser intensity on the polarization of high-intensity beams. It was found that, although low temperatures have been shown to reduce the spin relaxation rate in bulk semiconductors, they don't have a large impact on the polarization of thin photocathodes. It seems that the short active region in thin photocathodes does not allow spin relaxation mechanisms enough time to cause depolarization. Previous observations that lower QE areas on the photocathode yield higher polarization beams were confirmed. In addition, high-intensity, small-area laser pulses were shown to produce lower polarization beams. Based on these results, together with some findings in the existing literature, a new proposal for a high-intensity, high-polarization photocathode is given. It is hoped that the results of this thesis will promote further investigation on the properties of GaAs photocathodes

  9. Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy

    International Nuclear Information System (INIS)

    Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S.V.

    2001-01-01

    The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below E c ) and at 415 K (0.9 below E c ); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below E c known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below E c is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species

  10. Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy

    International Nuclear Information System (INIS)

    Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S.V.

    2004-01-01

    The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below E c ) and at 415 K (0.9 below E c ); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below E c known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below E c is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species. (author)

  11. Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S.V. E-mail: svb@physics.unipune.ernet.in

    2001-10-01

    The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below E{sub c}) and at 415 K (0.9 below E{sub c}); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below E{sub c} known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below E{sub c} is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species.

  12. A polarized photoluminescence study of strained layer GaAs photocathodes

    International Nuclear Information System (INIS)

    Mair, R.A.

    1996-07-01

    Photoluminescence measurements have been made on a set of epitaxially grown strained GaAs photocathode structures. The photocathodes are designed to exhibit a strain-induced enhancement of the electron spin polarization obtainable by optical pumping with circularly polarized radiation of near band gap energy. For the case of non-strained GaAs, the degree of spin polarization is limited to 50% by crystal symmetry. Under an appropriate uniaxial compression or tension, however, the valence band structure near the gap minimum is modified such that a spin polarization of 100% is theoretically possible. A total of nine samples with biaxial compressive strains ranging from zero to ∼0.8% are studied. X-ray diffraction analysis, utilizing Bragg reflections, is used to determine the crystal lattice structure of the samples. Luminescence spectra and luminescence circular polarization data are obtained at room temperature, ∼78 K and ∼12 K. The degree of luminescence circular polarization is used as a relative measure of the photo-excited electron spin polarization. The room temperature luminescence circular polarization data is compared with the measured electron spin polarization when the samples are used as electron photo-emitters with a negative electron affinity surface preparation. The luminescence data is also analyzed in conjunction with the crystal structure data with the goal of understanding the strain dependent valence band structure, optical pumping characteristics and spin depolarization mechanisms of the photocathode structures. A simple model is used to describe the luminescence data, obtained for the set of samples. Within the assumptions of the model, the deformation potentials a, b and d for GaAs are determined. The measured values are a = -10.16±.21 eV, b = -2.00±.05 eV and d = -4.87±.29 eV. Good agreement with published values of the deformation potentials provides support for the model used to describe the data

  13. Photoelectric characteristics of metal-Ga{sub 2}O{sub 3}-GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Kalygina, V. M., E-mail: Kalygina@ngs.ru; Vishnikina, V. V.; Petrova, Yu. S.; Prudaev, I. A.; Yaskevich, T. M. [National Research Tomsk State University (Russian Federation)

    2015-03-15

    We investigate the effect of thermal annealing in argon and of oxygen plasma processing on the photoelectric properties of GaAs-Ga{sub 2}O{sub 3}-Me structures. Gallium-oxide films are fabricated by photostimulated electrochemical oxidation of epitaxial gallium-arsenide layers with n-type conductivity. The as-deposited films were amorphous, but their processing in oxygen plasma led to the nucleation of β-Ga{sub 2}O{sub 3} crystallites. The unannealed films are nontransparent in the visible and ultraviolet (UV) ranges and there is no photocurrent in structures based on them. After annealing at 900°C for 30 min, the gallium-oxide films contain only β-Ga{sub 2}O{sub 3} crystallites and become transparent. Under illumination of the Ga{sub 2}O{sub 3}-GaAs structures with visible light, the photocurrent appears. This effect can be attributed to radiation absorption in GaAs. The photocurrent and its voltage dependence are determined by the time of exposure to the oxygen plasma. In the UV range, the sensitivity of the structures increases with decreasing radiation wavelength, starting at λ ≤ 230 nm. This is due to absorption in the Ga{sub 2}O{sub 3} film. Reduction in the structure sensitivity with an increase in the time of exposure to oxygen plasma can be caused by the incorporation of defects both at the Ga{sub 2}O{sub 3}-GaAs interface and in the Ga{sub 2}O{sub 3} film.

  14. Growth and electronic properties of two-dimensional systems on (110) oriented GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.

    2005-07-01

    As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type layers on (110) GaAs. Besides we investigated the activation process related to the conduction in the valence band and a parallelly conducting hopping band. The new two-dimensional hole gases revealed interesting physics. We studied the zero B-field spin splitting in these systems and compared it with the known theory. Furthermore, we investigated the anisotropy of the mobility. As opposed to the expectations we observed a strong persistent photoconductivity in our samples. Landau levels for two dimensional hole systems are non-linear and can show anticrossings. For the first time we were able to resolve anticrossings in a transport experiment and study the corresponding activation process. Finally, we compared these striking results with theoretical calculations. (orig.)

  15. Growth and characterization of InAs columnar quantum dots on GaAs substrate

    International Nuclear Information System (INIS)

    Li, L. H.; Patriarche, G.; Rossetti, M.; Fiore, A.

    2007-01-01

    The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated. The CQDs were formed by depositing a 1.8 monolayer (ML) InAs seed dot layer and a short period GaAs/InAs superlattice (SL). It was found that the growth of the CQDs is very sensitive to growth interruption (GI) and growth temperature. Both longer GI and higher growth temperature impact the size dispersion of the CQDs, which causes the broadening of photoluminescence (PL) spectrum and the presence of the additional PL peak tails. By properly choosing the GI and the growth temperature, CQDs including GaAs (3 ML)/InAs (0.62 ML) SL with period number up to 35 without plastic relaxation were grown. The corresponding equivalent thickness of the SL is 41 nm which is two times higher than the theoretical critical thickness of the strained InGaAs layer with the same average In composition of 16%. The increase of the critical thickness is partially associated with the formation of the CQDs. Based on a five-stack CQD active region, laser diodes emitting around 1120 nm at room temperature were demonstrated, indicating a high material quality. CQDs with nearly isotropic cross section (20 nmx20 nm dimensions) were formed by depositing a 16-period GaAs (3 ML)/InAs (0.62 ML) SL on an InAs seed dot layer, indicating the feasibility of artificial shape engineering of QDs. Such a structure is expected to be very promising for polarization insensitive device applications, such as semiconductor optical amplifiers

  16. Effect of AlSb quantum dots on efficiency of GaAs solar cell (Conference Presentation)

    Science.gov (United States)

    Mansoori, Ahmad; Addamane, Sadhvikas J.; Renteria, Emma J.; Shima, Darryl M.; Hains, Christopher P.; Balakrishnan, Ganesh

    2016-09-01

    Quantum Dots (QDs) have a broad applications in science and specifically in solar cell. Many research groups show that by adding QDs with lower bandgap respect to host material, the overall absorption of sun spectrum coverage will increase. Here, we propose using QDs with higher band gap respect to host material to improve efficiency of solar cell by improving quantum efficiency. GaAs solar cells have the highest efficiency in single junction solar cells. However, the absorption of GaAs is not good enough in wavelength lower than 550nm. AlSb can absorb shorter wavelength with higher absorption coefficient and also recombination rate should be lower because of higher bandgap of AlSb respect to GaAs. We embed AlSb QDs in GaAs solar cells and results show slight improvement in quantum efficiency and also in overall efficiency. Coverage of AlSb QDs has a direct impact on quality of AlSb QDs and efficiency of cell. In the higher coverage, intermixing between GaAs and AlSb causes to shift bandgap to lower value (having AlGaSb QDs instead of pure AlSb QDs). This intermixing decrease the Voc and overall efficiency of cell. In lower coverage, AlSb can survive from intermixing and overall performance of cell improves. Optimizing growth condition of AlSb QDs is a key point for this work. By using AlSb QDs, we can decrease the thickness of active layer of GaAs solar cells and have a thinner solar cell.

  17. Health risks of passive smoking.

    Science.gov (United States)

    Papier, C M; Stellman, S D

    1986-01-01

    Passive or involuntary smoking is the inhalation of smoke which escapes directly into the air from the lit end of a burning cigarette. This unfiltered smoke contains the same toxic components of the mainstream smoke inhaled directly by the smoker, including numerous carcinogens, many in greater concentrations. It has long been known that exposure to this type of smoke leads to increased respiratory and other adverse health conditions in non-smokers, especially children. During the past five years, evidence has been accumulating that risk of lung cancer is also higher, particularly in non-smoking women whose husbands smoke. Despite uncertainties and differences in interpretation of various cancer studies, there is ample justification for public health measures now in place or proposed, such as restriction or elimination of smoking in the workplace and in public places.

  18. Integrated Passive And Wireless Sensor

    KAUST Repository

    Li, Bodong

    2015-04-30

    A passive and wireless sensor is provided for sensing at least one of magnetic field, temperature or humidity. The sensor can provide only one of the sensing functions, individually or any combination of them simultaneously. It can be used for various applications where magnetic field changes, temperature and/or humidity need to be measured. In one or more embodiments, a surface acoustic wave (SAW) sensor is provided that can measure one or more of a magnetic field (or current that generates the magnetic field), temperature and humidity. In one or more embodiments, a magnetoimpedence (MI) sensor (for example a thin film giant magnetoimpedance (GMI) sensor), a thermally sensitive (for example a Lithium Niobite (LiNbO.sub.3)) substrate, and a humidity sensitive film (for example a hydrogel film) can be used as sensing elements.

  19. Integrated Passive And Wireless Sensor

    KAUST Repository

    Li, Bodong; Kosel, Jü rgen

    2015-01-01

    A passive and wireless sensor is provided for sensing at least one of magnetic field, temperature or humidity. The sensor can provide only one of the sensing functions, individually or any combination of them simultaneously. It can be used for various applications where magnetic field changes, temperature and/or humidity need to be measured. In one or more embodiments, a surface acoustic wave (SAW) sensor is provided that can measure one or more of a magnetic field (or current that generates the magnetic field), temperature and humidity. In one or more embodiments, a magnetoimpedence (MI) sensor (for example a thin film giant magnetoimpedance (GMI) sensor), a thermally sensitive (for example a Lithium Niobite (LiNbO.sub.3)) substrate, and a humidity sensitive film (for example a hydrogel film) can be used as sensing elements.

  20. Scanning tunneling spectroscopy of CdSe nanocrystals covalently bound to GaAs

    DEFF Research Database (Denmark)

    Walzer, K.; Marx, E.; Greenham, N.C.

    2003-01-01

    We present scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of CdSe nanocrystals covalently attached to doped GaAs substrates using monolayers of 1,6-hexanedithiol. STM measurements showed the formation of stable, densely packed, homogeneous monolayers...... of nanocrystals. STS measurements showed rectifying behaviour, with high currents at the opposite sample bias to that previously observed for CdSe nanocrystals adsorbed on Si substrates. We explain the rectifying behaviour by considering the interaction between the electronic states of the nanocrystals...