Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

International Nuclear Information System (INIS)

Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

2014-01-01

The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)

Electrode pattern design for GaAs betavoltaic batteries

International Nuclear Information System (INIS)

Chen Haiyang; Yin Jianhua; Li Darang

2011-01-01

The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied. Based on the study, an electrode pattern design principle of GaAs betavoltaic batteries is proposed. GaAs PIN junctions with and without the proposed electrode pattern are fabricated and measured under the illumination of 63 Ni. Results show that the proposed electrode can reduce the backscattering and shadowing for the beta particles from 63 Ni to increase the GaAs betavoltaic battery short circuit currents effectively but has little impact on the fill factors and ideal factors.

Field-In-Field Technique With Intrafractionally Modulated Junction Shifts for Craniospinal Irradiation

International Nuclear Information System (INIS)

Yom, Sue S.; Frija, Erik K. C.; Mahajan, Anita; Chang, Eric; Klein, Kelli C.; Shiu, Almon; Ohrt, Jared; Woo, Shiao

2007-01-01

Purpose: To plan craniospinal irradiation with 'field-in-field' (FIF) homogenization in combination with daily, intrafractional modulation of the field junctions, to minimize the possibility of spinal cord overdose. Methods and Materials: Lateral cranial fields and posterior spinal fields were planned using a forward-planned, step-and-shoot FIF technique. Field junctions were automatically modulated and custom-weighted for maximal homogeneity within each treatment fraction. Dose-volume histogram analyses and film dosimetry were used to assess results. Results: Plan inhomogeneity improved with FIF. Planning with daily modulated junction shifts provided consistent dose delivery during each fraction of treatment across the junctions. Modulation minimized the impact of a 5-mm setup error at the junction. Film dosimetry confirmed that no point in the junction exceeded the anticipated dose. Conclusions: Field-in-field planning and modulated junction shifts improve the homogeneity and consistency of daily dose delivery, simplify treatment, and reduce the impact of setup errors

Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

International Nuclear Information System (INIS)

Lajnef, M.; Chtourou, R.; Ezzaouia, H.

2010-01-01

GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height φ b0 parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

Directory of Open Access Journals (Sweden)

Wen-Jeng Ho

2017-06-01

Full Text Available This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2, indium tin oxide (ITO, and a hybrid layer of SiO2/ITO applied using Radio frequency (RF sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52% exceeded that of cells with a SiO2 antireflective coating (21.92%. Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating.

Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

Science.gov (United States)

Wang, Yibo; Liu, Yan; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

2017-06-01

We investigate GaAsBi/GaAsN system for the design of type-II staggered hetero tunneling field-effect transistor (hetero-TFET). Strain-symmetrized GaAsBi/GaAsN with effective lattice match to GaAs exhibits a type-II band lineup, and the effective bandgap EG,eff at interface is significantly reduced with the incorporation of Bi and N elements. The band-to-band tunneling (BTBT) rate and drive current of GaAsBi/GaAsN hetero-TFETs are boosted due to the utilizing of the type-II staggered tunneling junction with the reduced EG,eff. Numerical simulation shows that the drive current and subthreshold swing (SS) characteristics of GaAsBi/GaAsN hetero-TFETs are remarkably improved by increasing Bi and N compositions. The dilute content GaAs0.85Bi0.15/GaAs0.92N0.08 staggered hetero-nTFET achieves 7.8 and 550 times higher ION compared to InAs and In0.53Ga0.47As homo-TFETs, respectively, at the supply voltage of 0.3 V. GaAsBi/GaAsN heterostructure is a potential candidate for high performance TFET.

Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

Energy Technology Data Exchange (ETDEWEB)

Lajnef, M., E-mail: Mohamed.lajnef@yahoo.fr [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R.; Ezzaouia, H. [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

2010-03-01

GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height {phi}{sub b0} parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

Doping assessment in GaAs nanowires

DEFF Research Database (Denmark)

Goktas, N. Isik; Fiordaliso, Elisabetta Maria; LaPierre, R. R.

2018-01-01

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs...

Planar Josephson tunnel junctions in a transverse magnetic field

DEFF Research Database (Denmark)

Monacoa, R.; Aarøe, Morten; Mygind, Jesper

2007-01-01

demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

Directory of Open Access Journals (Sweden)

Zhaoquan Zeng

2013-07-01

Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Modulation of low-frequency oscillations in GaAs MESFETs' channel current by sidegating bias

Institute of Scientific and Technical Information of China (English)

DING Yong; LU Shengli; ZHAO Fuchuan

2005-01-01

Low-frequency oscillations in channel current are usually observed when measuring the GaAs MESFET's output characteristics. This paper studies the oscillations by testing the MESFET's output characteristics under different sidegate bias conditions. It is shown that the low-frequency oscillations of channel current are directly related to the sidegate bias. In other words, the sidegate bias can modulate the oscillations. Whether the sidegate bias varies positively or negatively, there will inevitably be a threshold voltage after which the low-frequency oscillations disappear. The observation is strongly dependent upon the peculiarities of channel-substrate (C-S) junction and impact ionization of traps-EL2 under high field. This conclusion is of particular pertinence to the design of low-noise GaAs IC's.

Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

DEFF Research Database (Denmark)

Boulanger, J. P.; Chia, A. C. E.; Wood, B.

2016-01-01

A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-...

Poster - Thur Eve - 57: Craniospinal irradiation with jagged-junction IMRT approach without beam edge matching for field junctions.

Science.gov (United States)

Cao, F; Ramaseshan, R; Corns, R; Harrop, S; Nuraney, N; Steiner, P; Aldridge, S; Liu, M; Carolan, H; Agranovich, A; Karva, A

2012-07-01

Craniospinal irradiation were traditionally treated the central nervous system using two or three adjacent field sets. A intensity-modulated radiotherapy (IMRT) plan (Jagged-Junction IMRT) which overcomes problems associated with field junctions and beam edge matching, improves planning and treatment setup efficiencies with homogenous target dose distribution was developed. Jagged-Junction IMRT was retrospectively planned on three patients with prescription of 36 Gy in 20 fractions and compared to conventional treatment plans. Planning target volume (PTV) included the whole brain and spinal canal to the S3 vertebral level. The plan employed three field sets, each with a unique isocentre. One field set with seven fields treated the cranium. Two field sets treated the spine, each set using three fields. Fields from adjacent sets were overlapped and the optimization process smoothly integrated the dose inside the overlapped junction. For the Jagged-Junction IMRT plans vs conventional technique, average homogeneity index equaled 0.08±0.01 vs 0.12±0.02, and conformity number equaled 0.79±0.01 vs 0.47±0.12. The 95% isodose surface covered (99.5±0.3)% of the PTV vs (98.1±2.0)%. Both Jagged-Junction IMRT plans and the conventional plans had good sparing of the organs at risk. Jagged-Junction IMRT planning provided good dose homogeneity and conformity to the target while maintaining a low dose to the organs at risk. Jagged-Junction IMRT optimization smoothly distributed dose in the junction between field sets. Since there was no beam matching, this treatment technique is less likely to produce hot or cold spots at the junction in contrast to conventional techniques. © 2012 American Association of Physicists in Medicine.

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

Science.gov (United States)

Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2015-09-16

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

First-principles study of the electronic transport properties in (GaAs)n (n=2–4) nanocluster-based molecular junctions

International Nuclear Information System (INIS)

Zhang, Daoli; Xu, Yuanlan; Zhang, Jianbing; Miao, Xiangshui

2012-01-01

In this program the geometric structures and electronic transport properties of a series of (GaAs) n (n=2,3,4) clusters are comparatively studied using non-equilibrium Green's function (NEGF) combined with density functional theory (DFT). It is find that all the GaAs nanocluster-based molecular junctions show metallic behavior at low biases ([−2 V,2 V]) while negative differential resistance (NDR) appears at a certain high bias range. Our calculation shows that the current of (GaAs) 3 nanocluster-based molecular junction is almost the smallest at any bias. The mechanisms of the current–voltage characteristics of all the three molecular junctions are proposed.

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Energy Technology Data Exchange (ETDEWEB)

Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2013-07-15

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

Science.gov (United States)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

Symmetry breaking in SNS junctions: edge transport and field asymmetries

Science.gov (United States)

Suominen, Henri; Nichele, Fabrizio; Kjaergaard, Morten; Rasmussen, Asbjorn; Danon, Jeroen; Flensberg, Karsten; Levitov, Leonid; Shabani, Javad; Palmstrom, Chris; Marcus, Charles

We study magnetic diffraction patterns in a tunable superconductor-semiconductor-superconductor junction. By utilizing epitaxial growth of aluminum on InAs/InGaAs we obtain transparent junctions which display a conventional Fraunhofer pattern of the critical current as a function of applied perpendicular magnetic field, B⊥. By studying the angular dependence of the critical current with applied magnetic fields in the plane of the junction we find a striking anisotropy. We attribute this effect to dephasing of Andreev states in the bulk of the junction, leading to SQUID like behavior when the magnetic field is applied parallel to current flow. Furthermore, in the presence of both in-plane and perpendicular fields, asymmetries in +/-B⊥ are observed. We suggest possible origins and discuss the role of spin-orbit and Zeeman physics together with a background disorder potential breaking spatial symmetries of the junction. Research supported by Microsoft Project Q, the Danish National Research Foundation and the NSF through the National Nanotechnology Infrastructure Network.

P-N junction solar cell grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Hazrati Fard, M.

2001-01-01

Growth of GaAs epilayers by Molecular Beam Epitaxy was accomplished for the first time in Iran. The layers were grown on GaAs (001) substrates (p+ wafer) with Si impurity for p n junction solar cell fabrication at a rate of nearly one micron per hour and 0.25 micron per quarter. Crystalline quality of grown layers had been monitored during growth by Reflection High Energy Electron Diffraction system. Doping profile and layer thickness was assessed by electrochemical C-V profiling method. Then Hall measurements were conducted on small samples both in room temperature and liquid nitrogen temperature so giving average carrier concentration and compensation ratio. The results as like: V oc , I sc , F F, η were comparable with other laboratory reports. information for obtaining good and repeatable growths was collected. Therefore, the conditions of repeatable quality growth p n junction solar cells onto GaAs (001) substrates were determined

Scanning microwave microscopy applied to semiconducting GaAs structures

Science.gov (United States)

Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

2018-02-01

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

Field modulation of the critical current in magnetic Josephson junctions

International Nuclear Information System (INIS)

Blamire, M G; Smiet, C B; Banerjee, N; Robinson, J W A

2013-01-01

The dependence of the critical current of a simple Josephson junction on the applied magnetic field is well known and, for a rectangular junction, gives rise to the classic ‘Fraunhofer’ modulation with periodic zeros at the fields that introduce a flux quantum into the junction region. Much recent work has been performed on Josephson junctions that contain magnetic layers. The magnetization of such layers introduces additional flux into the junction and, for large junction areas or strong magnetic materials, can significantly distort the modulation of the critical current and strongly suppress the maximum critical current. The growing interest in junctions that induce odd-frequency triplet pairing in a ferromagnet, and the need to make quantitative comparisons with theory, mean that a full understanding of the role of magnetic barriers in controlling the critical current is necessary. This paper analyses the effect of magnetism and various magnetic configurations on Josephson critical currents; the overall treatment applies to junctions of general shape, but the specific cases of square and rectangular junctions are considered. (paper)

The Berry phase in GaAs semiconductor with a quantized field

International Nuclear Information System (INIS)

Chen Gang; Chen Zidong; Yu Lixian

2007-01-01

In this paper we investigate the Berry phase in GaAs semiconductor with a quantized magnetic field in the rotating wave approximation. The eigenfunctions of the nuclear spin in the quantized external field are obtained and thus the Berry phase is evaluated explicitly in terms of the introduction of the phase shift. It is shown that the Berry phase can be easily controlled by the coupling strength, the anisotropy constant and the frequency of the electromagnetic wave, which can be important in applications in geometric quantum computing

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

NARCIS (Netherlands)

Prins, M.W.J.; Jansen, R.; Kempen, van H.

1996-01-01

We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

Exciton states in GaAs δ-doped systems under magnetic fields and hydrostatic pressure

Energy Technology Data Exchange (ETDEWEB)

Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Instituto de Física, Universidad de Antioquia, AA 1226 Medellín (Colombia); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Instituto de Física, Universidad de Antioquia, AA 1226 Medellín (Colombia)

2013-04-15

Excitons in GaAs n-type δ-doped quantum wells are studied taking into account the effects of externally applied magnetic fields as well as of hydrostatic pressure. The one-dimensional potential profile in both the conduction and valence bands is described including Hartree effects via a Thomas–Fermi-based local density approximation. The allowed uncorrelated energy levels are calculated within the effective mass and envelope function approximations by means of an expansion over an orthogonal set of infinite well eigenfunctions and a variational method is used to obtain the exciton states. The results are presented as functions of the two-dimensional doping concentration and the magnetic field strength for zero and finite values of the hydrostatic pressure. In general, it is found that the exciton binding energy is a decreasing function of the doping-density and an increasing function of the magnetic field intensity. A comparison with recent experiments on exciton-related photoluminescence in n-type δ-doped GaAs is made.

Rectification of harmonically oscillating magnetic fields in quarter circular Josephson junctions

International Nuclear Information System (INIS)

Shaju, P.D.; Kuriakose, V.C.

2003-01-01

A novel method for rectifying harmonically varying magnetic fields is demonstrated using fluxons in quarter circular Josephson junctions (JJs). A JJ with a quarter circular geometry terminated with a load resistor at one end is found to be capable of rectifying alternating fields when biased with a constant dc current. An external magnetic field applied parallel to the dielectric barrier of the junction interacts with the edges of the junction and make asymmetric boundary conditions. These asymmetric boundary conditions facilitate fluxon penetration under a dc bias from one end of the junction in alternate half cycles of the applied field. Thus effective rectification of the field can be achieved using quarter circular JJs. This unique phenomenon is specific to this geometry and can be exploited for making superconducting magnetic field rectifiers. This proposed device is expected to have important applications in millimeter and sub-millimeter radio wave astronomy

Magnetic field behavior of current steps in long Josephson junctions

International Nuclear Information System (INIS)

Costabile, G.; Cucolo, A.M.; Pace, S.; Parmentier, R.D.; Savo, B.; Vaglio, R.

1980-01-01

The zero-field steps, or dc current singularities, in the current-voltage characteristics of long Josephson tunnel junctions, first reported by Chen et al., continue to attract research interest both because their study can provide fundamental information on the dynamics of fluxons in such junctions and because they are accompanied by the emission of microwave radiation from the junction, which may be exploitable in practical oscillator applications. The purpose of this paper is to report some experimental observations of the magnetic field behavior of the steps in junctions fabricated in our Laboratory and to offer a qualitative explanation for this behavior. Measurements have been made both for very long (L >> lambdasub(J)) and for slightly long (L approx. >= lambdasub(J)) junctions with a view toward comparing our results with those of other workers. (orig./WRI)

Dielectric effect on electric fields in the vicinity of the metal–vacuum–dielectric junction

International Nuclear Information System (INIS)

Chung, M.S.; Mayer, A.; Miskovsky, N.M.; Weiss, B.L.; Cutler, P.H.

2013-01-01

The dielectric effect was theoretically investigated in order to describe the electric field in the vicinity of a junction of a metal, dielectric, and vacuum. The assumption of two-dimensional symmetry of the junction leads to a simple analytic form and to a systematic numerical calculation for the field. The electric field obtained for the triple junction was found to be enhanced or reduced according to a certain criterion determined by the contact angles and dielectric constant. Further numerical calculations of the dielectric effect show that an electric field can experience a larger enhancement or reduction for a quadruple junction than that achieved for the triple junction. It was also found that even though it changes slowly in comparison with the shape effect, the dielectric effect was noticeably large over the entire range of the shape change. - Highlights: ► This work explains how a very strong electric field can be produced due to the dielectric in the vicinity of metal–dielectric contact. ► This work deals with configurations which enhance electric fields using the dielectric effect. The configuration is a type of junction at which metal, vacuum and dielectric meet. ► This work suggests the criterion to determine whether field enhancement occurs or not in the triple junction of metal, vacuum and dielectric. ► This work suggests that a quadruple junction is more effective in enhancing the electric field than a triple junction. The quadruple junction is formed by an additional vacuum portion to the triple junction. ► This work suggests that a triple junction can be a breakthrough candidate for a cold electron source

Difference-frequency generation in the field of a few-cycle laser pulse propagating in a GaAs crystal with a domain structure

International Nuclear Information System (INIS)

Oganesyan, David L; Vardanyan, Aleksandr O; Oganesyan, G D

2013-01-01

Difference-frequency generation in a GaAs crystal with a periodic domain structure in the field of a few-cycle laser pulse is considered for the case of weakly pronounced material dispersion. The straight-line method is used to solve numerically the system of coupled nonlinear partial differential equations describing the evolution of the electric field of this laser pulse in GaAs crystals with periodic and chirped domain structures. It is shown that application of a GaAs crystal with a chirped domain structure makes it possible to control the frequency-modulation law for a broadband differencefrequency pulse. (nonlinear optical phenomena)

Field emission current from a junction field-effect transistor

International Nuclear Information System (INIS)

Monshipouri, Mahta; Abdi, Yaser

2015-01-01

Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

Science.gov (United States)

Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Jiang, Xiang-Wei

2017-06-01

The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green's function formalism with density functional theory. Aiming at performance improvement, two types of defect-induced transport behaviors are reported in this work. By examining the partial density of states of the system, we find the substitutional defect OAs that locates in the middle of tunneling region will introduce band-gap states, which can be used as stepping stones to increase the tunneling current nearly 3 times higher at large bias voltage (Vb≥0.3V). Another type of defects SeAs and VGa (Ga vacancy) create donor and acceptor states at the edge of conduction band (CB) and valence band (VB)respectively, which can change the band bending of the junction as well as increase the tunneling field obtaining a 1.5 times higher ON current. This provides an effective defect engineering approach for next generation TFET device design.

Field emission current from a junction field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

2015-04-15

Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

First principles study of the electronic and optical properties of GaAs nanoparticles under the influence of external uniform electric field

International Nuclear Information System (INIS)

Bezi Javan, Masoud

2012-01-01

We present electronic and optical properties of the hydrogen terminated gallium arsenide nanoparticles using time dependent density functional theory (TD-DFT). The electronic and optical properties of the GaAs nanoparticles were calculated at presence of the uniform external electric field in the range from 0 to 0.51 V/Å. The induced electric filed can decrease the HOMO–LUMO gap of the nanoparticles and the mount of these reductions increases with gain of the electric field strength. -- Highlights: ► HOMO–LUMO gap of the nanoparticles is significantly more than GaAs bulk band gap. ► HOMO–LUMO gap of the nanoparticles decreases with increase of the nanoparticles size. ► External electric filed decrease the HOMO–LUMO gap of the nanoparticles. ► Dipole moment of nanoparticles increases with gain of the electric field strength. ► Absorption peaks of GaAs nanoparticles shows red shift with applying electric field.

InAs/Si Hetero-Junction Nanotube Tunnel Transistors

KAUST Repository

Hanna, Amir; Fahad, Hossain M.; Hussain, Muhammad Mustafa

2015-01-01

Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

InAs/Si Hetero-Junction Nanotube Tunnel Transistors

KAUST Repository

Hanna, Amir

2015-04-29

Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

Spin-dependent transport in metal/semiconductor tunnel junctions

NARCIS (Netherlands)

Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

1995-01-01

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

Elliptic annular Josephson tunnel junctions in an external magnetic field: the statics

DEFF Research Database (Denmark)

Monaco, Roberto; Granata, Carmine; Vettoliere, Antonio

2015-01-01

We have investigated the static properties of one-dimensional planar Josephson tunnel junctions (JTJs) in the most general case of elliptic annuli. We have analyzed the dependence of the critical current in the presence of an external magnetic field applied either in the junction plane...... symmetric electrodes a transverse magnetic field is equivalent to an in-plane field applied in the direction of the current flow. Varying the ellipse eccentricity we reproduce all known results for linear and ring-shaped JTJs. Experimental data on high-quality Nb/Al-AlOx/Nb elliptic annular junctions...

Josephson tunnel junctions in a magnetic field gradient

DEFF Research Database (Denmark)

Monaco, R.; Mygind, Jesper; Koshelets, V.P.

2011-01-01

We measured the magnetic field dependence of the critical current of high-quality Nb-based planar Josephson tunnel junctions in the presence of a controllable nonuniform field distribution. We found skewed and slowly changing magnetic diffraction patterns quite dissimilar from the Fraunhofer...

A new structure for comparing surface passivation materials of GaAs solar cells

Science.gov (United States)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

Energy Technology Data Exchange (ETDEWEB)

Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Vaisman, Michelle [Yale University; Li, Qiang [Hong Kong University of Science and Technology; Lau, Kei May [Hong Kong University of Science and Technology

2017-08-31

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Sulfur passivation and contact methods for GaAs nanowire solar cells

International Nuclear Information System (INIS)

Tajik, N; Peng, Z; Kuyanov, P; LaPierre, R R

2011-01-01

The effect of sulfur passivation on core-shell p-n junction GaAs nanowire (NW) solar cells has been investigated. Devices of two types were investigated, consisting of indium tin oxide contact dots or opaque Au finger electrodes. Lateral carrier transport from the NWs to the contact fingers was achieved via a p-doped GaAs surface conduction layer. NWs between the opaque contact fingers had sidewall surfaces exposed for passivation by sulfur. The relative cell efficiency increased by 19% upon passivation. The contribution of the thin film grown between the NWs to the total cell efficiency was estimated by removing the NWs using a sonication procedure. Mechanisms of carrier transport and photovoltaic effects are discussed on the basis of spatially resolved laser scanning measurements.

A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

Science.gov (United States)

Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.

1984-01-01

Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

Science.gov (United States)

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-02-07

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

The critical current density of an SNS Josephson-junction in high magnetic fields

International Nuclear Information System (INIS)

Carty, George J; Hampshire, Damian P

2013-01-01

Although the functional form of the critical current density (J c ) of superconducting–normal–superconducting (SNS) Josephson-junctions (J-Js) has long been known in the very low field limit (e.g. the sinc function), includes the local properties of the junction and has been confirmed experimentally in many systems, there have been no such general solutions available for high fields. Here, we derive general analytic equations for J c in zero field and in high fields across SNS J-Js for arbitrary resistivity of the superconductor and the normal layer which are consistent with the literature results available in limiting cases. We confirm the validity of the approach using both computational solutions to time-dependent Ginzburg–Landau (TDGL) theory applied to SNS junctions and experimental J c data for an SNS PbBi–Cd–PbBi junction. We suggest that since SNS junctions can be considered the basic building blocks for the description of the grain boundaries of polycrystalline materials because they both provide flux-flow channels, this work may provide a mathematical framework for high J c technological polycrystalline superconductors in high magnetic fields. (paper)

Simulations of fine structures on the zero field steps of Josephson tunnel junctions

DEFF Research Database (Denmark)

Scheuermann, M.; Chi, C. C.; Pedersen, Niels Falsig

1986-01-01

Fine structures on the zero field steps of long Josephson tunnel junctions are simulated for junctions with the bias current injected into the junction at the edges. These structures are due to the coupling between self-generated plasma oscillations and the traveling fluxon. The plasma oscillations...... are generated by the interaction of the bias current with the fluxon at the junction edges. On the first zero field step, the voltages of successive fine structures are given by Vn=[h-bar]/2e(2omegap/n), where n is an even integer. Applied Physics Letters is copyrighted by The American Institute of Physics....

Field-effect P-N junction

Science.gov (United States)

Regan, William; Zettl, Alexander

2015-05-05

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1990-01-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

Subnanosecond photoconductive switching in GaAs

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

Simulation and fabrication of SiO{sub 2}/graded-index TiO{sub 2} antireflection coating for triple-junction GaAs solar cells by using the hybrid deposition process

Energy Technology Data Exchange (ETDEWEB)

Liu, Jheng-Jie; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Lee, Yi-Yu; Chang, Chia-Ming

2014-11-03

GaAs-based multi-junction solar cells (MJ-SCs) provide a wide solar-energy absorption-band (300–1800 nm), but designing and fabricating a broadband antireflection coating (ARC) are challenging. Because MJ-SCs are typically in a series that connects each subcell, the total output current is limited by the subcell that generates the smallest photocurrent. Thus, the ARC for MJ-SCs must be designed not only to obtain broadband absorption but also to minimize light reflection at the wavelength band of the current-limited cell. This study proposes a broadband SiO{sub 2}/graded-index TiO{sub 2} ARC for improving the current-limited subcell performance by using a hybrid deposition (e-beam evaporation and spin-on coating). A bottom TiO{sub 2} layer and a top SiO{sub 2} layer were deposited through e-beam evaporation, but the middle TiO{sub 2} layer was deposited using spin-on coating because the refractive index values of the TiO{sub 2} films could be tuned by applying the spin speed. Therefore, the graded-index TiO{sub 2} layers were easily obtained using a hybrid deposition method. In addition, a suitable reflectance spectrum of an ARC structure for a middle-cell current-limited triple-junction (3-J) GaAs solar cell was simulated using commercial optical software. The photovoltaic current–voltage and external quantum efficiency (EQE) were measured and compared. The resulting improvements of a short-circuit current of 32.4% and conversion efficiency of 31.8% were attributed to an enhanced EQE of 32.97% as well as a low broadband reflectance exhibited on the middle cell of the 3-J GaAs solar cell with a SiO{sub 2}/graded-index TiO{sub 2} ARC. - Highlights: • A broadband SiO{sub 2}/graded-index TiO{sub 2} ARC obtained by a hybrid deposition • A suitable triple-layer ARC was simulated by a commercial optical software. • Optical reflection, photovoltaic I–V, and EQE of 3-J GaAs solar cell were characterized. • An increased J{sub sc} of 32.4% and an increased �

Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

Science.gov (United States)

Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

1982-01-01

The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces

NARCIS (Netherlands)

Raad, de G.J.; Bruls, D.M.; Koenraad, P.M.; Wolter, J.H.

2002-01-01

Atomically resolved, voltage-dependent scanning tunneling microscopy (STM) images of GaAs(110) are compared to the results of a one-dimensional model used to calculate the amount of tip-induced band bending for a tunneling junction between a metal and a semiconductor. The voltage-dependent changes

Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs

International Nuclear Information System (INIS)

Ney, A; Harris, J S Jr; Parkin, S S P

2006-01-01

The temperature dependence of the magnetization of a light emitting diode having a ferromagnetic contact (spin-LED) is measured from 2 to 300 K in magnetic fields from 30 to 70 kOe and it is found that it originates from the GaAs substrate. The magnetization of GaAs comprises a van Vleck-type paramagnetic contribution to the susceptibility which scales inversely with the band gap of the semiconductor. Thus, the temperature dependence of the band gap of GaAs accounts for the non-linear temperature dependent magnetic susceptibility of GaAs and thus, at large magnetic fields, for the spin-LED

Coherent diffusive transport mediated by Andreev reflections at V=Δ/e in a mesoscopic superconductor/semiconductor/superconductor junction

International Nuclear Information System (INIS)

Kutchinsky, J.; Taboryski, R.; Kuhn, O.; So/rensen, C.B.; Lindelof, P.E.; Kristensen, A.; Hansen, J.B.; Jacobsen, C.S.; Skov, J.L.

1997-01-01

We present experiments revealing a singularity in the coherent current across a superconductor/semiconductor/superconductor (SSmS) junction at the bias voltage corresponding to the superconducting energy gap V=Δ/e. The SSmS structure consists of highly doped GaAs with superconducting electrodes of aluminum configured as an interferometer. The phase-coherent component of the current is probed as the amplitude of h/2e vs magnetic-field oscillations in the differential resistance of the interferometer. copyright 1997 The American Physical Society

Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

Energy Technology Data Exchange (ETDEWEB)

Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

2016-08-15

Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

Magnetic field mediated conductance oscillation in graphene p–n junctions

Science.gov (United States)

Cheng, Shu-Guang

2018-04-01

The electronic transport of graphene p–n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus magnetic field shows a Shubnikov–de Haas oscillation. At higher magnetic field, the p–n junction subjected to the quasi-classical regime and the formation of snake states results in periodical backscattering and transmission as magnetic field varies. The conductance oscillation pattern is mediated both by magnetic field and the carrier concentration on bipolar regions. For medium magnetic field between above two regimes, the combined contributions of resonant tunneling, snake states oscillation and Aharanov–Bohm interference induce irregular oscillation of conductance. At very high magnetic field, the system is subjected to quantum Hall regime. Under disorder, the quantum tunneling at low magnetic field is slightly affected and the oscillation of snake states at higher magnetic field is suppressed. In the quantum Hall regime, the conductance is a constant as predicted by the mixture rule.

Electrodeposition of Metal on GaAs Nanowires

Science.gov (United States)

Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

2010-10-01

Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

The role of magnetic fields for curvature effects in Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Jarmoliński, A.; Dobrowolski, T., E-mail: dobrow@up.krakow.pl

2017-06-01

The large area Josephson junction is considered. On the basis of Maxwell equations the influence of the magnetic field on fluxion dynamics is considered. The presented studies show that assumptions presumed in the literature do not restrict experimental settings adopted in the considerations of the fluxion movement in the Josephson junction. It is shown that the particular orientation of the magnetic fields is not needed in order to study physical effects of curvature and therefore they do not restrict the experimental arrangements.

Spin dynamics in GaAs and (110)-GaAs heterostructures; Spindynamik in GaAs und (110)-GaAs-Heterostrukturen

Energy Technology Data Exchange (ETDEWEB)

Oertel, Stefan

2012-07-01

This thesis investigates the spin dynamics in both bulk GaAs and (llO)GaAs heterostructures using time- and polarization-resolved photoluminescence spectroscopy. In bulk GaAs the spin relaxation t ime is measured for the first time in the high temperature regime from 280 K to 400 K and is compared to numerical calculations. The numerical calculations are based on the spin relaxation theory of the Dyakonov-Perel mechanism effected by momentum scattering with polar optical phonons and electron-electron scattering and are in good agreement with the experimental results. Measurements of the dependence on the electron density serve to determine the energy dependent proportional factor between the electron density and the effective electron-electron scattering time. Also in bulk GaAs the interaction between the electron spin system and the nuclear spin system is investigated. The measured electron Lande g-factor under the influence of the nuclear magnetic field is used as an indicator to monitor the temporal evolution of the nuclear magnetic field under sustained dynamic nuclear polarization. Measurements with polarization modulated excitation enable the determination of the relevant time scale at which dynamic nuclear polarization takes place. Furthermore, the temporal evolution of the measured electron Lande g-factor shows the complex interplay of the dynamic nuclear polarization, the nuclear spin diffusion and the nuclear spin relaxation. In symmetric (110)-GaAs quantum wells the dependence of the inplane anisotropy of the electron Lande g-factor on the quantum well thickness is determined experimentally. The measurements are in very good agreement with calculations based upon k . p-theory and reveal a maximum of the anisotropy at maximum carrier localization in the quantum well. The origin of the anisotropy that is not present in symmetric (001) quantum wells is qualitatively described by means of a simplified model based on fourth-order perturbation theory. A

Accelerated GaAs growth through MOVPE for low-cost PV applications

Science.gov (United States)

Ubukata, Akinori; Sodabanlu, Hassanet; Watanabe, Kentaroh; Koseki, Shuichi; Yano, Yoshiki; Tabuchi, Toshiya; Sugaya, Takeyoshi; Matsumoto, Koh; Nakano, Yoshiaki; Sugiyama, Masakazu

2018-05-01

The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90 μm/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70 μm/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80 μm/h. The conversion efficiency of the cell grown at 80 μm/h was comparable to that of the 20 μm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.

Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

DEFF Research Database (Denmark)

Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan

1997-01-01

We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile

International Nuclear Information System (INIS)

McMorrow, D.; Knudson, A.R.; Melinger, J.S.; Buchner, S.

1999-01-01

The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

Static properties of small Josephson tunnel junctions in an oblique magnetic field

DEFF Research Database (Denmark)

Monaco, Roberto; Aarøe, Morten; Mygind, Jesper

2009-01-01

We have carried out a detailed experimental investigation of the static properties of planar Josephson tunnel junctions in presence of a uniform external magnetic field applied in an arbitrary orientation with respect to the barrier plane. We considered annular junctions, as well as rectangular...

Spin transport anisotropy in (110)GaAs

Energy Technology Data Exchange (ETDEWEB)

Odilon, D.D.C. Jr.; Rudolph, Joerg; Hey, Rudolf; Santos, Paulo V. [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Iikawa, Fernando [Universidade Estadual de Campinas, IFGW, Campinas SP (Brazil)

2007-07-01

Mobile piezoelectric potentials are used to coherently transport electron spins in GaAs(110) quantum wells (QW) over distances exceeding 60{mu}m. We demonstrate that the dynamics of mobile spins under external magnetic fields depends on the direction of motion in the QW plane. The weak piezoelectric fields impart a non-vanishing average velocity to the carriers, allowing for the direct observation of the carrier momentum dependence of the spin polarization dynamics. While transport along [001] direction presents high in-plane spin relaxation rates, transport along [ anti 110] shows a much weaker external field dependence due to the non-vanishing internal magnetic field. We show that the anisotropy is an intrinsic property of the underling GaAs matrix, associated with the bulk inversion asymmetry contribution to the LS-coupling.

Subnanosecond linear GaAs photoconductive switching, revision 1

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.; Hofer, W. W.

Research was conducted in photoconductive switching for the purpose of generating subnanosecond pulses in the 25 to 50kV range. The very fast recombination rates of Gallium Arsenide (GaAs) was exploited to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is (approx. 10(-14) sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. Switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm was observed. The illumination source was a Nd:YAG laser operating at 1.06 microns.

A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Choudhury, Aditya N. Roy, E-mail: aditya@physics.iisc.ernet.in; Venkataraman, V. [Dept. of Physics, Indian Institute of Science, Bangalore – 560012 (India)

2016-05-23

Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not the voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

Science.gov (United States)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

Optical Orientation of Mn2+ Ions in GaAs in Weak Longitudinal Magnetic Fields

Science.gov (United States)

Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Sapega, V. F.; Yakovlev, D. R.; Bayer, M.

2011-04-01

We report on optical orientation of Mn2+ ions in bulk GaAs subject to weak longitudinal magnetic fields (B≤100mT). A manganese spin polarization of 25% is directly evaluated by using spin-flip Raman scattering. The dynamical Mn2+ polarization occurs due to the s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence reveals a nontrivial electron spin dynamics, where the oriented Mn2+ ions tend to stabilize the electron spins.

Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

Energy Technology Data Exchange (ETDEWEB)

Lebib, A.; Hannanchi, R. [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); Beji, L., E-mail: lotbej_fr@yahoo.fr [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); EL Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019 Monastir (Tunisia)

2016-12-01

We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

Stretchable GaAs photovoltaics with designs that enable high areal coverage

Energy Technology Data Exchange (ETDEWEB)

Lee, Jongho; Yoon, Jongseung; Park, Sang-Il [Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana-Champaign, IL (United States); Wu, Jian [Department of Civil and Environmental Engineering, Northwestern University, Evanston, IL (United States); Shi, Mingxing; Liu, Zhuangjian [Institute of High Performance Computing, Singapore (Singapore); Li, Ming [Department of Civil and Environmental Engineering, Northwestern University, Evanston, IL (United States); Department of Engineering Mechanics, Dalian University of Technology, Dalian (China); Huang, Yonggang [Departments of Civil and Environmental Engineering and Mechanical Engineering, Northwestern University, Evanston, IL (United States); Rogers, John A. [Department of Materials Science and Engineering, Chemistry, Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana-Champaign, IL (United States)

2011-02-22

Strategies are presented for achieving, simultaneously, both large areal coverage and high stretchability by using elastomeric substrates with surface relief in geometries that confine strains at the locations of the interconnections, and away from the devices. The studies involve a combination of theory and experiment to reveal the essential mechanics, and include demonstrations of the ideas in stretchable solar modules that use ultrathin, single junction GaAs solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Dose distribution at junctional area abutting X-ray and electron fields

International Nuclear Information System (INIS)

Yang, Kwang Mo

2004-01-01

For the head and neck radiotherapy, abutting photon field with electron field is frequently used for the irradiation of posterior neck when tolerable dose on spinal cord has been reached. Using 6 MV X-ray and 9 MeV electron beams of Clinac1800(Varian, USA) linear accelerator, we performed film dosimetry by the X-OMAT V film of Kodak in solid water phantom according to depths(0 cm, 1.5 cm, 3 cm, 5 cm). 6 MV X-ray and 9 MeV electron(1 Gy) were exposes to 8 cm depth and surface(SSD 100 cm) of phantom. The dose distribution to the junction line between photon(10 x 10 cm field with block) and electron(15 cm x 15 cm field with block) fields was also measured according to depths(0 cm, 0.5 1.5 cm, 3 cm, 5 cm). At the junction line between photon and electron fields, the hot spot was developed on the side of the photon field and a cold spot was developed on that of the electron field. The hot spot in the photon side was developed at depth 1.5 cm with 7 mm width. The maximum dose of hot spot was increased to 6% of reference doses in the photon field. The cold spot in the electron side was developed at all measured depths(0.5 cm-3 cm) with 1-12.5 mm widths. The decreased dose in the cold spot was 4.5-30% of reference dose in the electron field. When we make use of abutting photon field with electron field for the treatment of head and neck cancer we should consider the hot and cold dose area in the junction of photon and electron field according to location of tumor.

Subnanosecond linear GaAs photoconductive switching: Revision 1

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.; Hofer, W.W.

1989-01-01

We are conducting research in photoconductive switching for the purpose of generating subnanosecond pulses in the 25--50kV range. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is /approximately/10/sup /minus/14/ sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. We have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm. The illumination source was a Nd:YAG laser operating at 1.06 /mu/m. 4 refs., 11 figs.

Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks

Directory of Open Access Journals (Sweden)

Kangho Kim

2013-01-01

Full Text Available The GaAs solar cells are grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD and fabricated by photolithography, metal evaporation, annealing, and wet chemical etch processes. Anodized aluminum oxide (AAO masks are prepared from an aluminum foil by a two-step anodization method. Inductively coupled plasma dry etching is used to etch and define the nanoarray structures on top of an InGaP window layer of the GaAs solar cells. The inverted-cone-shaped nanoholes with a surface diameter of about 50 nm are formed on the top surface of the solar cells after the AAO mask removal. Photovoltaic and optical characteristics of the GaAs solar cells with and without the nanohole arrays are investigated. The reflectance of the AAO nanopatterned samples is lower than that of the planar GaAs solar cell in the measured range. The short-circuit current density increased up to 11.63% and the conversion efficiency improved from 10.53 to 11.57% under 1-sun AM 1.5 G conditions by using the nanohole arrays. Dependence of the efficiency enhancement on the etching depth of the nanohole arrays is also investigated. These results show that the nanohole arrays fabricated with an AAO technique may be employed to improve the light absorption and, in turn, the conversion efficiency of the GaAs solar cell.

Fine structures on zero-field steps in low-loss Josephson tunnel junctions

DEFF Research Database (Denmark)

Monaco, Roberto; Barbara, Paola; Mygind, Jesper

1993-01-01

The first zero-field step in the current-voltage characteristic of intermediate-length, high-quality, low-loss Nb/Al-AlOx/Nb Josephson tunnel junctions has been carefully investigated as a function of temperature. When decreasing the temperature, a number of structures develop in the form...... of regular and slightly hysteretic steps whose voltage position depends on the junction temperature and length. This phenomenon is interesting for the study of nonlinear dynamics and for application of long Josephson tunnel junctions as microwave and millimeter-wavelength oscillators....

Effect of AlSb quantum dots on efficiency of GaAs solar cell (Conference Presentation)

Science.gov (United States)

Mansoori, Ahmad; Addamane, Sadhvikas J.; Renteria, Emma J.; Shima, Darryl M.; Hains, Christopher P.; Balakrishnan, Ganesh

2016-09-01

Quantum Dots (QDs) have a broad applications in science and specifically in solar cell. Many research groups show that by adding QDs with lower bandgap respect to host material, the overall absorption of sun spectrum coverage will increase. Here, we propose using QDs with higher band gap respect to host material to improve efficiency of solar cell by improving quantum efficiency. GaAs solar cells have the highest efficiency in single junction solar cells. However, the absorption of GaAs is not good enough in wavelength lower than 550nm. AlSb can absorb shorter wavelength with higher absorption coefficient and also recombination rate should be lower because of higher bandgap of AlSb respect to GaAs. We embed AlSb QDs in GaAs solar cells and results show slight improvement in quantum efficiency and also in overall efficiency. Coverage of AlSb QDs has a direct impact on quality of AlSb QDs and efficiency of cell. In the higher coverage, intermixing between GaAs and AlSb causes to shift bandgap to lower value (having AlGaSb QDs instead of pure AlSb QDs). This intermixing decrease the Voc and overall efficiency of cell. In lower coverage, AlSb can survive from intermixing and overall performance of cell improves. Optimizing growth condition of AlSb QDs is a key point for this work. By using AlSb QDs, we can decrease the thickness of active layer of GaAs solar cells and have a thinner solar cell.

A method for producing uniform dose distributions in the junction regions of large hinge angle electrol fields

International Nuclear Information System (INIS)

Zavgorodni, S.F.; Beckham, W.A.; Roos, D.E.

1996-01-01

The planning problems presented by abutting electron fields are well recognised. Junctioning electron fields with large hinge angle compounds the problems because of the creation of closely situated 'hot' and 'cold' spots. The technique involving a compensated superficial x-ray (SXR) field to treat the junction region between electron fields was developed and used in a particular clinical case (treatment of a squamous cell carcinoma of the forehead/scalp). The SXR beam parameters were chosen and the compensator was designed to make the SXR field complementary to the electron fields. Application of a compensated SXR field eliminated 'cold' spots in the junction region and minimised 'hot' spots to (110%). In the clinical case discusses the 'hot' spots due to the SXR field would not appear because of increased attenuation of the soft x-rays in bone. The technique proposed produces uniform dose distribution up to 3 cm deep and can be considered as an additional tool for dealing with electron fields junctioning problems. (author)

35-kV GaAs subnanosecond photoconductive switches

Science.gov (United States)

Pocha, Michael D.; Druce, Robert L.

1990-12-01

High-voltage, fast-pulse generation using GaAs photoconductive switches is investigated. It is possible to to generate 35-kV pulses with risetimes as short as 135 ps using 5-mm gap switches, and electric field hold-off of greater than 100 kV/cm is achieved. An approximately 500-ps FWHM on/off electrical pulse is generated with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier lifetimes. Experimental results are described, and fabrication of switches and the diagnostics used to measure these fast signals are discussed. Experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs is also described.

AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

Energy Technology Data Exchange (ETDEWEB)

SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-05-16

Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

Photovoltaic X-ray detectors based on epitaxial GaAs structures

Energy Technology Data Exchange (ETDEWEB)

Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

2005-12-01

A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

Growth of GaAs “nano ice cream cones” by dual wavelength pulsed laser ablation

Science.gov (United States)

Schamp, C. T.; Jesser, W. A.; Shivaram, B. S.

2007-05-01

Harmonic generation crystals inherently offer the possibility of using multiple wavelengths of light in a single laser pulse. In the present experiment, the fundamental (1064 nm) and second harmonic (532 nm) wavelengths from an Nd:YAG laser are focused together on GaAs and GaSb targets for ablation. Incident energy densities up to about 45 J/cm 2 at 10 Hz with substrate temperatures between 25 and 600 °C for durations of about 60 s have been used in an ambient gas pressure of about 10 -6 Torr. The ablated material was collected on electron-transparent amorphous carbon films for TEM analysis. Apart from a high density of isolated nanocrystals, the most common morphology observed consists of a crystalline GaAs cone-like structure in contact with a sphere of liquid Ga, resembling an "ice cream cone", typically 50-100 nm in length. For all of the heterostuctures of this type, the liquid/solid/vacuum triple junction is found to correspond to the widest point on the cone. These heterostructures likely form by preferential evaporation of As from molten GaAs drops ablated from the target. The resulting morphology minimizes the interfacial and surface energies of the liquid Ga and solid GaAs.

Radiation damages and electro-conductive characteristics of Neutron-Transmutation-Doped GaAs

Energy Technology Data Exchange (ETDEWEB)

Kuriyama, Kazuo; Sato, Masataka; Sakai, Kiyohiro [Hosei Univ., Koganei, Tokyo (Japan). Coll. of Engineering; Okada, Moritami

1996-04-01

Neutron Transmutation Doping (NTD) method made it possible to do homogeneous doping of impurities and to easily control the doping level. Thus, the method has been put into practice for some materials such as silicon. Here, the annealing behavior of anti-site defects generated in neutron-irradiated GaAs was studied. Electric activations of NTD-impurities were started around 550degC in P1 and P2 radiation fields, which were coincident with the beginning of extinction of electron trapping which was caused by anti-site defects due to fast neutron radiation. The electric resistivities of GaAs in neutron radiation fields; P1, P2 and P3 changed depending with the annealing temperature. The electric resistivities of GaAs in P1 and P2 fields indicate the presence of hopping conduction through radiation damages. The resistance of GaAs irradiated in P1 was smaller by nearly 2 orders than that of the untreated control. Further, the electric activation process for NTD-impurities was investigated using ESR and Raman spectroscopy. (M.N.)

The influence of in situ argon cleaning of GaAs on Schottky diodes and metal-semiconductor field-effect transistors

NARCIS (Netherlands)

Hassel, van J.G.; Heyker, H.C.; Kwaspen, J.J.M.

1995-01-01

The influence of in situ argon cleaning of GaAs on the electrical characteristics of Schottky diodes and metal–semiconductor field-effect transistors (MESFETs) is investigated. The beam energy was varied from 50 to 500 eV and the characteristics were compared to wet chemically cleaned devices. The

Nuclear spin warm up in bulk n -GaAs

Science.gov (United States)

Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

2016-08-01

We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

Construction of calibration pads facility, Walker Field, Grand Junction, Colorado

International Nuclear Information System (INIS)

Ward, D.L.

1978-08-01

A gamma-ray spectrometer facility was completed at Walker Field Airport, Grand Junction, Colorado, in November 1976. This report describes spectrometers and their calibration, the construction of the spectrometer facility, the radioelement concentrations, procedures for using the facilites, and environmental considerations

Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

DEFF Research Database (Denmark)

Nielsen, Niels Ole

1976-01-01

Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage...... amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET....

L10-MnGa based magnetic tunnel junction for high magnetic field sensor

Science.gov (United States)

Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wang, H. L.; Wang, X. L.; Wei, D. H.; Zhao, J. H.

2017-07-01

We report on the investigation of the magnetic tunnel junction structure designed for high magnetic field sensors with a perpendicularly magnetized L10-MnGa reference layer and an in-plane magnetized Fe sensing layer. A large linear tunneling magnetoresistance ratio up to 27.4% and huge dynamic range up to 5600 Oe have been observed at 300 K, with a low nonlinearity of 0.23% in the optimized magnetic tunnel junction (MTJ). The field response of tunneling magnetoresistance is discussed to explain the field sensing properties in the dynamic range. These results indicate that L10-MnGa based orthogonal MTJ is a promising candidate for a high performance magnetic field sensor with a large dynamic range, high endurance and low power consumption.

Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact

Science.gov (United States)

Pokhabov, D. A.; Pogosov, A. G.; Zhdanov, E. Yu.; Shevyrin, A. A.; Bakarov, A. K.; Shklyaev, A. A.

2018-02-01

The conductance of a GaAs-based suspended quantum point contact (QPC) equipped with lateral side gates has been experimentally studied in the absence of the external magnetic field. The half-integer conductance plateau ( 0.5 ×2 e2/h ) has been observed when an asymmetric voltage between the side gates is applied. The appearance of this plateau has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPC became possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.

Symmetry of trapped-field profiles in square columnar Josephson-junction arrays

International Nuclear Information System (INIS)

Moreno, J.J.; Chen, D.; Hernando, A.

1995-01-01

The remanence of NxN square-columnar Josephson-junction arrays with normalized maximum junction current i max is calculated from the dc and ac Josephson equations, the Ampere theorem, and the gauge invariance. A transition line on the i max- N plane is obtained, on the high-i max side of which the remanence is nonzero. It is found that in the nonzero remanence state the symmetry degree of field profile can be lower than expected by intuition. The meaning and importance of this finding are discussed

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

Science.gov (United States)

Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

2015-11-11

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

Science.gov (United States)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

International Nuclear Information System (INIS)

Hadley, Austin; Ding, George X.

2014-01-01

Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fields and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans

Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface

International Nuclear Information System (INIS)

Wu, Xiaojun; Xu, Xinlong; Lu, Xinchao; Wang, Li

2013-01-01

Terahertz (THz) emission from octadecanthiol (ODT) passivated (1 0 0) surface of the semi-insulating GaAs was measured, and compared with those from the native oxidized and the fresh surfaces. It was shown that the self-assembled ODT monolayer can stabilize the GaAs (1 0 0) surface, and maintain a THz surface emission 1.4 times as efficient as the native oxidized surface under equal conditions. Surface passivation can reduce the built-in electric field in the depletion region of the GaAs (1 0 0), resulting in the suppression of the THz radiation to a different extent. Oxidation of GaAs surface reduces the THz amplitude mainly in the low-frequency region. These results indicate that GaAs can be made a more effective THz source by choosing molecular passivation technique. Conversely, the THz emission features such as polarity, amplitude, and phase from molecule-passivated surfaces may be used to characterize the attached molecules.

Two-dimensional superconducting state of monolayer Pb films grown on GaAs(110) in a strong parallel magnetic field.

Science.gov (United States)

Sekihara, Takayuki; Masutomi, Ryuichi; Okamoto, Tohru

2013-08-02

Two-dimensional (2D) superconductivity was studied by magnetotransport measurements on single-atomic-layer Pb films on a cleaved GaAs(110) surface. The superconducting transition temperature shows only a weak dependence on the parallel magnetic field up to 14T, which is higher than the Pauli paramagnetic limit. Furthermore, the perpendicular-magnetic-field dependence of the sheet resistance is almost independent of the presence of the parallel field component. These results are explained in terms of an inhomogeneous superconducting state predicted for 2D metals with a large Rashba spin splitting.

Influence of deposition field on the magnetic anisotropy in epitaxial Co70Fe30 films on GaAs(001)

International Nuclear Information System (INIS)

Hindmarch, A.T.; Arena, D.; Dempsey, K.J.; Henini, M.; Marrows, C.H.

2010-01-01

The effect of the application of a magnetic field during deposition of epitaxial Co 70 Fe 30 onto GaAs(001) is shown; we find an initially counterintuitive result. For field applied along the interfacial uniaxial hard axis the relative effective uniaxial magnetic anisotropy is increased by a factor of two in comparison to both field along the uniaxial easy axis, or no field; usually, application of a deposition field results in a uniaxial easy axis parallel to this field direction. We show that the deposition field changes the maximal projection of the atomic orbital magnetic moments onto the easy axis, which corresponds to a deposition field induced shift in the Helmholtz free-energy landscape of the system.

Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wei; Huo, Dayun; Guo, Xiaoxiang; Rong, Chen; Shi, Zhenwu, E-mail: zwshi@suda.edu.cn; Peng, Changsi, E-mail: changsipeng@suda.edu.cn

2016-01-01

Graphical abstract: - Highlights: • Periodic nanostructures were fabricated on GaAs wafers by four-beam laser interference patterning which have potential applications in many fields. • Significant different results were obtained on epi-ready and homo-epitaxial GaAs substrate surfaces. • Two-pulse patterning was carried out on homo-epitaxial GaAs substrate, a noticeable morphology transformation induced by the second pulse was observed. • Temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations. The calculation agrees well with the experiment results. - Abstract: In this paper, periodic nanostructures were fabricated on GaAs wafers by four-beam UV pulsed laser interference patterning. Significant different results were observed on epi-ready and homo-epitaxial GaAs substrate surfaces, which suggests GaAs oxide layer has an important effect on pulsed laser irradiation process. In the case of two-pulse patterning, a noticeable morphology transformation induced by the second pulse was observed on homo-epitaxial GaAs substrate. Based on photo-thermal mode, temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations.

Transient photoluminescence decay investigations of LPE GaAs heteroface solar cells

International Nuclear Information System (INIS)

Wettling, W.; Ehrhardt, A.; Brett, A.; Lutz, F.

1990-01-01

The transient photoluminescence decay (PLD) is investigated as a technique for the quality control of GaAs solar cells. An analytic expression for the PL intensity is derived from the time dependent continuity equation for minority carrier concentration in the emitter by the Fourier transform method. On both sides of the emitter, i.e. at the interface to the window layer and to the space charge region, surface recombination velocities that can vary between 0 and ∞ are allowed as boundary conditions. Experiments were performed using a mode-locked and cavity dumped laser as excitation source and an optical sampling oscilloscope as detector for the transient PL. PLD from GaAs wafers and solar cells was measured with time resolution of down to 20 ps for various intensities of laser excitation and (for the cells) under open-circuit and short-circuit condition. The results are discussed in respect to the theory together with a model of local internal boundary conditions at the junction near the exciting laser beam

Enchanced total dose damage in junction field effect transistors and related linear integrated circuits

International Nuclear Information System (INIS)

Flament, O.; Autran, J.L.; Roche, P.; Leray, J.L.; Musseau, O.

1996-01-01

Enhanced total dose damage of Junction Field-effect Transistors (JFETs) due to low dose rate and/or elevated temperature has been investigated for elementary p-channel structures fabricated on bulk and SOI substrates as well as for related linear integrated circuits. All these devices were fabricated with conventional junction isolation (field oxide). Large increases in damage have been revealed by performing high temperature and/or low dose rate irradiations. These results are consistent with previous studies concerning bipolar field oxides under low-field conditions. They suggest that the transport of radiation-induced holes through the oxide is the underlying mechanism. Such an enhanced degradation must be taken into account for low dose rate effects on linear integrated circuits

Coherent diffusive transport mediated by Andreev reflections at V=Delta/e in a mesoscopic superconductor/semiconductor/superconductor junction

DEFF Research Database (Denmark)

Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Kuhn, Oliver

1997-01-01

We present experiments revealing a singularity in the coherent current across a superconductor/semiconductor/superconductor (SSmS) junction at the bias voltage corresponding to the superconducting energy gap V=Delta/e. The SSmS structure consists of highly doped GaAs with superconducting electrodes...

Numerical investigation on splitting of ferrofluid microdroplets in T-junctions using an asymmetric magnetic field with proposed correlation

Science.gov (United States)

Aboutalebi, Mohammad; Bijarchi, Mohamad Ali; Shafii, Mohammad Behshad; Kazemzadeh Hannani, Siamak

2018-02-01

The studies surrounding the concept of microdroplets have seen a dramatic increase in recent years. Microdroplets have applications in different fields such as chemical synthesis, biology, separation processes and micro-pumps. This study numerically investigates the effect of different parameters such as Capillary number, Length of droplets, and Magnetic Bond number on the splitting process of ferrofluid microdroplets in symmetric T-junctions using an asymmetric magnetic field. The use of said field that is applied asymmetrically to the T-junction center helps us control the splitting of ferrofluid microdroplets. During the process of numerical simulation, a magnetic field with various strengths from a dipole located at a constant distance from the center of the T-junction was applied. The main advantage of this design is its control over the splitting ratio of daughter droplets and reaching various microdroplet sizes in a T-junction by adjusting the magnetic field strength. The results showed that by increasing the strength of the magnetic field, the possibility of asymmetric splitting of microdroplets increases in a way that for high values of field strength, high splitting ratios can be reached. Also, by using the obtained results at various Magnetic Bond numbers and performing curve fitting, a correlation is derived that can be used to accurately predict the borderline between splitting and non-splitting zones of microdroplets flow in micro T-junctions.

Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

Energy Technology Data Exchange (ETDEWEB)

Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-02-01

Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

35-kV GaAs subnanosecond photoconductive switches

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L. (Lawrence Livermore National Lab., CA (United States))

1990-12-01

Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. The authors are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. They have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. They have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes the experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. They also describe the experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs.

FeGa/MgO/Fe/GaAs(001) magnetic tunnel junction: Growth and magnetic properties

International Nuclear Information System (INIS)

Gobaut, B.; Ciprian, R.; Salles, B.R.; Krizmancic, D.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

2015-01-01

Research on spintronics and on multiferroics leads now to the possibility of combining the properties of these materials in order to develop new functional devices. Here we report the integration of a layer of magnetostrictive material into a magnetic tunnel junction. A FeGa/MgO/Fe heterostructure has been grown on a GaAs(001) substrate by molecular beam epitaxy (MBE) and studied by X-ray magnetic circular dichroism (XMCD). The comparison between magneto optical Kerr effect (MOKE) measurements and hysteresis performed in total electron yield allowed distinguishing the ferromagnetic hysteresis loop of the FeGa top layer from that of the Fe buried layer, evidencing a different switching field of the two layers. This observation indicates an absence of magnetic coupling between the two ferromagnetic layers despite the thickness of the MgO barrier of only 2.5 nm. The in-plane magnetic anisotropy has also been investigated. Overall results show the good quality of the heterostructure and the general feasibility of such a device using magnetostrictive materials in magnetic tunnel junction

Donor impurity-related photoionization cross section in GaAs cone-like quantum dots under applied electric field

Science.gov (United States)

Iqraoun, E.; Sali, A.; Rezzouk, A.; Feddi, E.; Dujardin, F.; Mora-Ramos, M. E.; Duque, C. A.

2017-06-01

The donor impurity-related electron states in GaAs cone-like quantum dots under the influence of an externally applied static electric field are theoretically investigated. Calculations are performed within the effective mass and parabolic band approximations, using the variational procedure to include the electron-impurity correlation effects. The uncorrelated Schrödinger-like electron states are obtained in quasi-analytical form and the entire electron-impurity correlated states are used to calculate the photoionisation cross section. Results for the electron state energies and the photoionisation cross section are reported as functions of the main geometrical parameters of the cone-like structures as well as of the electric field strength.

Surface barrier analysis of semi-insulating and n{sup +}-type GaAs(0 0 1) following passivation with n-alkanethiol SAMs

Energy Technology Data Exchange (ETDEWEB)

Marshall, Gregory M. [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada); Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Bensebaa, Farid [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Dubowski, Jan J., E-mail: jan.j.dubowski@usherbrooke.ca [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada)

2011-02-15

The surface Fermi level of semi-insulating and n{sup +}-type GaAs(0 0 1) was determined before and after passivation with n-alkanethiol self-assembled monolayers (SAMs) by X-ray photoelectron spectroscopy. Fermi level positioning was achieved using Au calibration pads integrated directly onto the GaAs surface, prior to SAM deposition, in order to provide a surface equipotential binding energy reference. Fermi level pinning within 50 meV and surface barrier characteristics according to the Advanced Unified Defect Model were observed. Our results demonstrate the effectiveness of the Au integration technique for the determination of band-edge referenced Fermi level positions and are relevant to an understanding of emerging technologies based on the molecular-semiconductor junction.

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

International Nuclear Information System (INIS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-01-01

Molecular-Beam Epitaxy growth of multiple In 0.4 Ga 0.6 As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4 Ga 0.6 As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4 Ga 0.6 As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers

Directory of Open Access Journals (Sweden)

Maronchuk I. E.

2008-12-01

Full Text Available Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much worse than control solar cells manufactured on the same structures but without quantum dots. Solar cells containing quantum dots in the p-region were slightly better than control solar cells.

Diffusion of Ni, Ga, and As in the surface layer of GaAs and characteristics of the Ni/GaAs contact

International Nuclear Information System (INIS)

Uskov, V.A.; Fedotov, A.B.; Erofeeva, E.A.; Rodionov, A.I.; Dzhumakulov, D.T.

1987-01-01

The authors investigate the low-temperature codiffusion of Ni, Ga, and As in the surface layer of gallium arsenide and study its effect on the current-voltage characteristics of a Ni/GaAs rectifier contact. The concentration distribution of atoms in the function layer of a Ni-GaAs system was investigated by the methods of layerwise radiometric and neutron-activation analyses. It was found that interdiffusion of components takes place in the Ni-GaAs system in an elastic stress field, generated by the differences in the lattice parameters and thermal-expansion coefficients of Ni, GaAs, and the intermetallic compound which form. The form and parameters of the current-voltage characteristics of a Ni/GaAs contact are determined by the phase composition and the structure of the junction layer

Magnetic field oscillations of the critical current in long ballistic graphene Josephson junctions

Science.gov (United States)

Rakyta, Péter; Kormányos, Andor; Cserti, József

2016-06-01

We study the Josephson current in long ballistic superconductor-monolayer graphene-superconductor junctions. As a first step, we have developed an efficient computational approach to calculate the Josephson current in tight-binding systems. This approach can be particularly useful in the long-junction limit, which has hitherto attracted less theoretical interest but has recently become experimentally relevant. We use this computational approach to study the dependence of the critical current on the junction geometry, doping level, and an applied perpendicular magnetic field B . In zero magnetic field we find a good qualitative agreement with the recent experiment of M. Ben Shalom et al. [Nat. Phys. 12, 318 (2016), 10.1038/nphys3592] for the length dependence of the critical current. For highly doped samples our numerical calculations show a broad agreement with the results of the quasiclassical formalism. In this case the critical current exhibits Fraunhofer-like oscillations as a function of B . However, for lower doping levels, where the cyclotron orbit becomes comparable to the characteristic geometrical length scales of the system, deviations from the results of the quasiclassical formalism appear. We argue that due to the exceptional tunability and long mean free path of graphene systems a new regime can be explored where geometrical and dynamical effects are equally important to understand the magnetic field dependence of the critical current.

Lithium compensation of GaAs

International Nuclear Information System (INIS)

Alexiev, D.; Tavendale, A.J.

1988-08-01

Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments, the effect of Li diffusion on existing trap spectra, defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature, initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made

Subnanosecond, high-voltage photoconductive switching in GaAs

Science.gov (United States)

Druce, Robert L.; Pocha, Michael D.; Griffin, Kenneth L.; O'Bannon, Jim

1991-03-01

We are conducting research on the switching properties of photoconductive materials to explore their potential for generating highpower microwaves (HPM) and for high reprate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanchelike mode (the optical pulse only controls switch closing) . Operating in the unear mode we have observed switch closing times of less than 200 Ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lockon modes high fields are switched with lower laser pulse energies resulting in higher efficiencies but with measurable switching delay and jitter. We are currently investigating both large area (1 cm2) and small area 1 mm2) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1. 06 tim.

Numerical study of self-field effects on dynamics of Josephson-junction arrays

International Nuclear Information System (INIS)

Phillips, J.R.; Van der Zant, H.S.J.; White, J.; Orlando, T.P.

1994-01-01

We consider the influence of self-induced magnetic fields on dynamic properties of arrays of resistively and capacitively shunted Josephson junctions. Self-field effects are modeled by including mutual inductance interactions between every cell in the array. We find that it is important to include all mutual inductance interactions in order to understand the dynamic properties of the array, in particular subharmonic structure arising under AC current bias. (orig.)

Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well

Science.gov (United States)

Anghel, S.; Passmann, F.; Singh, A.; Ruppert, C.; Poshakinskiy, A. V.; Tarasenko, S. A.; Moore, J. N.; Yusa, G.; Mano, T.; Noda, T.; Li, X.; Bristow, A. D.; Betz, M.

2018-03-01

Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λSOI is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λSOI through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λSOI and diffusion coefficient.

Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

Energy Technology Data Exchange (ETDEWEB)

Bagraev, N. T., E-mail: Bagraev@mail.ioffe.ru [Ioffe Institute (Russian Federation); Chaikina, E. I. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Division de Fisica Aplicada (Mexico); Danilovskii, E. Yu.; Gets, D. S.; Klyachkin, L. E.; L’vova, T. V.; Malyarenko, A. M. [Ioffe Institute (Russian Federation)

2016-04-15

The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room temperature. The I–V characteristics of the SI GaAs device reveal nonlinear behavior that appears to be evidence of the Coulomb blockade process as well as the Coulomb oscillations. The sulfur passivation of the SI GaAs device surface results in enormous transformation of the I–V characteristics that demonstrate the strong increase of the resistance and Coulomb blockade regime is replaced by the electron tunneling processes. The results obtained are analyzed within frameworks of disordering SI GaAs surface that is caused by inhomogeneous distribution of the donor and acceptor anti-site defects which affects the conditions of quantum- mechanical tunneling. Weak localization processes caused by the preservation of the Fermi level pinning are demonstrated by measuring the negative magnetoresistance in weak magnetic fields at room temperature. Finally, the studies of the magnetoresistance at higher magnetic fields reveal the h/2e Aharonov–Altshuler–Spivak oscillations with the complicated behavior due to possible statistical mismatch of the interference paths in the presence of different microdefects.

Enhancement of conductance of GaAs sub-microwires under external stimuli

Science.gov (United States)

Qu, Xianlin; Deng, Qingsong; Zheng, Kun

2018-03-01

Semiconductors with one dimension on the micro-nanometer scale have many unique physical properties that are remarkably different from those of their bulk counterparts. Moreover, changes in the external field will further modulate the properties of the semiconductor micro-nanomaterials. In this study, we used focused ion beam technology to prepare freestanding ⟨111⟩-oriented GaAs sub-microwires from a GaAs substrate. The effects of laser irradiation and bending or buckling deformation induced by compression on the electrical transport properties of an individual GaAs sub-microwire were studied. The experimental results indicate that both laser irradiation and bending deformation can enhance their electrical transport properties, the laser irradiation resulted in a conductance enhancement of ˜30% compared to the result with no irradiation, and in addition, bending deformation changed the conductance by as much as ˜180% when the average strain was approximately 1%. The corresponding mechanisms are also discussed. This study provides beneficial insight into the fabrication of electronic and optoelectronic devices based on GaAs micro/nano-wires.

Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires

International Nuclear Information System (INIS)

Shu Haibo; Chen Xiaoshuang; Ding Zongling; Dong Ruibin; Lu Wei

2010-01-01

The mechanism of the preferential adsorption of Ga on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires is studied by using first-principles calculations within density functional theory. The calculated results show that Au preadsorption on GaAs(111)B surface significantly enhances the stability of the Ga adatom in comparison with the adsorption of Ga on clean GaAs(111)B surface. The stabilization of the Ga adatom is due to charge transfers from the Ga 4p and 4s states to the Au 6s and As 4p states. The number of Ga adatoms stabilized on GaAs(111)B surfaces depends on the size of surface Au cluster. The reason is that Au acted as an electron acceptor on GaAs(111)B surface assists the charge transfer of Ga adatoms for filling the partial unoccupied bands of GaAs(111)B surface. Our results are helpful to understand the growth of Au-assisted GaAs nanowires.

Development of Nb nanoSQUIDs based on SNS junctions for operation in high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Morosh, Viacheslav; Kieler, Oliver; Weimann, Thomas; Zorin, Alexander [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Mueller, Benedikt; Martinez-Perez, Maria Jose; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut and Center for Quantum Science in LISA+, Universitaet Tuebingen (Germany)

2016-07-01

Investigation of the magnetization reversal of single magnetic nanoparticles requires SQUIDs with high spatial resolution, high spin sensitivity (a few Bohr magneton μ{sub B}) and at the same time sufficient stability in high magnetic fields. We fabricated dc nanoSQUIDs comprising overdamped SNS sandwich-type (Nb/HfTi/Nb) Josephson junctions using optimized technology based on combination of electron beam lithography and chemical-mechanical polishing. Our nanoSQUIDs have Josephson junctions with lateral dimensions ≤ 150 nm x 150 nm, effective loop areas < 0.05 μm{sup 2} and the distance between the Josephson junctions ≤ 100 nm. The feeding strip lines of the width ≤ 200 nm have been realized. The nanoSQUIDs have shown stable operation in external magnetic fields at least up to 250 mT. Sufficiently low level of flux noise resulting in spin sensitivity of few tens μ{sub B}/Hz{sup 1/2} has been demonstrated. A further reduction of the nanoSQUID size using our technology is possible.

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

International Nuclear Information System (INIS)

Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang

2010-01-01

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Static properties of small Josephson tunnel junctions in a transverse magnetic field

DEFF Research Database (Denmark)

Monaco, R.; Aarøe, Morten; Mygind, Jesper

2008-01-01

The magnetic field distribution in the barrier of small planar Josephson tunnel junctions is numerically simulated in the case when an external magnetic field is applied perpendicular to the barrier plane. The simulations allow for heuristic analytical solutions for the Josephson static phase...... profile from which the dependence of the maximum Josephson current on the applied field amplitude is derived. The most common geometrical configurations are considered and, when possible, the theoretical findings are compared with the experimental data. ©2008 American Institute of Physics...

Supine Craniospinal Irradiation Using Intrafractional Junction Shifts and Field-in-Field Dose Shaping: Early Experience at Methodist Hospital

International Nuclear Information System (INIS)

South, Michael C.; Chiu, J. Kam; Teh, Bin S.; Bloch, Charles; Schroeder, Thomas M.; Paulino, Arnold C.

2008-01-01

Purpose: To describe our preliminary experience with supine craniospinal irradiation. The advantages of the supine position for craniospinal irradiation include patient comfort, easier access to maintain an airway for anesthesia, and reduced variability of the head tilt in the face mask. Methods and Materials: The cranial fields were treated with near lateral fields and a table angle to match their divergence to the superior edge of the spinal field. The collimator was rotated to match the divergence from the superior spinal field. The spinal fields were treated using a source to surface distance (SSD) technique with the couch top at 100 cm. When a second spinal field was required, the table and collimator were rotated 90 o to allow for the use of the multileaf collimator and so the gantry could be rotated to match the divergence of the superior spinal field. The multileaf collimator was used for daily dynamic featherings and field-in-field dose control. Results: With a median follow-up of 20.2 months, five documented failures and no cases of radiation myelitis occurred in 23 consecutive patients. No failures occurred in the junctions of the spine-spine or brain-spine fields. Two failures occurred in the primary site alone, two in the spinal axis alone, and one primary site failure plus distant metastasis. The median time to recurrence was 17 months. Conclusion: The results of our study have shown that supine approach for delivering craniospinal irradiation is not associated with increased relapses at the field junctions. To date, no cases of radiation myelitis have developed

Monte Carlo simulation of THz radiation from GaAs p-i-n diodes under high electric fields using an extended valley model

International Nuclear Information System (INIS)

Dinh Nhu Thao

2008-01-01

We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)

Model experiments on growth modes and interface electronics of CuInS{sub 2}: Ultrathin epitaxial films on GaAs(100) substrates

Energy Technology Data Exchange (ETDEWEB)

Calvet, Wolfram [Institute for Heterogeneous Materials Systems, Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109, Berlin (Germany); Lewerenz, Hans-Joachim [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, CA, 91101 (United States); Pettenkofer, Christian [Institute Silicon Photovoltaics, Helmholtz-Zentrum Berlin, Kekulestrasse 5, 12489, Berlin (Germany)

2014-09-15

The heterojunction formation between GaAs(100) and CuInS{sub 2} is investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). Thin layers of CuInS{sub 2} films were deposited in a step-by-step process on wet chemically pre-treated GaAs(100) surfaces by molecular beam epitaxy (MBE) with a total upper thickness limit of the films of 60 nm. The film growth starts from a sulfur-rich GaAs(100) surface. XPS core level analysis of the substrate and film reveals initially a transitory growth regime with the formation of a Ga containing chalcopyrite phase. With increasing film thickness, a change in stoichiometry from Cu-poor to Cu-rich composition is observed. The evaluation of the LEED data shows the occurrence of a recrystallization process where the film orientation follows that of the substrate with the epitaxial relation GaAs{100} parallel CuInS{sub 2}{001}. On the completed junction with a CuInS{sub 2} film thickness of 60 nm, the band discontinuities of the GaAs(100)/CuInS{sub 2} structure measured with XPS and UPS were determined as ΔE{sub V} = 0.1 ± 0.1 eV and ΔE{sub C} = 0.0 ± 0.1 eV, thus showing a type II band alignment. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Novel double-stage high-concentrated solar hybrid photovoltaic/thermal (PV/T) collector with nonimaging optics and GaAs solar cells reflector

International Nuclear Information System (INIS)

Abdelhamid, Mahmoud; Widyolar, Bennett K.; Jiang, Lun; Winston, Roland; Yablonovitch, Eli; Scranton, Gregg; Cygan, David; Abbasi, Hamid; Kozlov, Aleksandr

2016-01-01

Highlights: • A novel hybrid concentrating photovoltaic thermal (PV/T) collector is developed. • Thermal component achieves 60× concentration using nonimaging optics. • GaAs solar cells used as spectrally selective mirrors for low energy photons. • Thermal efficiencies of 37% at 365 °C and electrical efficiencies of 8% achieved. • Combined electric efficiency reaches 25% of DNI for system cost of $283.10/m"2". - Abstract: A novel double stage high-concentration hybrid solar photovoltaic thermal (PV/T) collector using nonimaging optics and world record thin film single-junction gallium arsenide (GaAs) solar cells has been developed. We present a detailed design and simulation of the system, experimental setup, prototype, system performance, and economic analysis. The system uses a parabolic trough (primary concentrator) to focus sunlight towards a secondary nonimaging compound parabolic concentrator (CPC) to simultaneously generate electricity from single junction GaAs solar cells, as well as high temperature dispatchable heat. This study is novel in that (a) the solar cells inside the vacuum tube act as spectrally selective mirrors for lower energy photons to maximize the system exergy, and (b) secondary concentrator allows the thermal component to reach a concentration ratio ∼60×, which is significantly higher than conventional PV/T concentration ratios. The maximum outlet temperature reached was 365 °C, and on average the thermal efficiency of the experiment was around 37%. The maximum electrical efficiency was around 8%. The total system electricity generation is around 25% of incoming DNI, by assuming the high temperature stream is used to power a steam turbine. The installed system cost per unit of parabolic trough aperture area is $283.10 per m"2.

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

International Nuclear Information System (INIS)

Seyedi, M. A.; Yao, M.; O'Brien, J.; Dapkus, P. D.; Wang, S. Y.

2013-01-01

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields 2 , which shows a strong possibility for high-speed applications with a broad area device

Solar energy converters based on multi-junction photoemission solar cells.

Science.gov (United States)

Tereshchenko, O E; Golyashov, V A; Rodionov, A A; Chistokhin, I B; Kislykh, N V; Mironov, A V; Aksenov, V V

2017-11-23

Multi-junction solar cells with multiple p-n junctions made of different semiconductor materials have multiple bandgaps that allow reducing the relaxation energy loss and substantially increase the power-conversion efficiency. The choice of materials for each sub-cell is very limited due to the difficulties in extracting the current between the layers caused by the requirements for lattice- and current-matching. We propose a new vacuum multi-junction solar cell with multiple p-n junctions separated by vacuum gaps that allow using different semiconductor materials as cathode and anode, both activated to the state of effective negative electron affinity (NEA). In this work, the compact proximity focused vacuum tube with the GaAs(Cs,O) photocathode and AlGaAs/GaAs-(Cs,O) anode with GaAs quantum wells (QWs) is used as a prototype of a vacuum single-junction solar cell. The photodiode with the p-AlGaAs/GaAs anode showed the spectral power-conversion efficiency of about 1% at V bias  = 0 in transmission and reflection modes, while, at V bias  = 0.5 V, the efficiency increased up to 10%. In terms of energy conservation, we found the condition at which the energy cathode-to-anode transition was close to 1. Considering only the energy conservation part, the NEA-cell power-conversion efficiency can rich a quantum yield value which is measured up to more than 50%.

Testing a GaAs cathode in SRF gun

International Nuclear Information System (INIS)

Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

2011-01-01

RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10 -12 Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to ∼10 -9 Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating

Near-Field Enhanced Photochemistry of Single Molecules in a Scanning Tunneling Microscope Junction.

Science.gov (United States)

Böckmann, Hannes; Gawinkowski, Sylwester; Waluk, Jacek; Raschke, Markus B; Wolf, Martin; Kumagai, Takashi

2018-01-10

Optical near-field excitation of metallic nanostructures can be used to enhance photochemical reactions. The enhancement under visible light illumination is of particular interest because it can facilitate the use of sunlight to promote photocatalytic chemical and energy conversion. However, few studies have yet addressed optical near-field induced chemistry, in particular at the single-molecule level. In this Letter, we report the near-field enhanced tautomerization of porphycene on a Cu(111) surface in a scanning tunneling microscope (STM) junction. The light-induced tautomerization is mediated by photogenerated carriers in the Cu substrate. It is revealed that the reaction cross section is significantly enhanced in the presence of a Au tip compared to the far-field induced process. The strong enhancement occurs in the red and near-infrared spectral range for Au tips, whereas a W tip shows a much weaker enhancement, suggesting that excitation of the localized plasmon resonance contributes to the process. Additionally, using the precise tip-surface distance control of the STM, the near-field enhanced tautomerization is examined in and out of the tunneling regime. Our results suggest that the enhancement is attributed to the increased carrier generation rate via decay of the excited near-field in the STM junction. Additionally, optically excited tunneling electrons also contribute to the process in the tunneling regime.

Equivalent Josephson junctions

International Nuclear Information System (INIS)

Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

2008-01-01

The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

Intermetallic bonds and midgap interface states at epitaxial Al/GaAs(001) junctions

International Nuclear Information System (INIS)

Maxisch, T.; Baldereschi, A.; Binggeli, N.

2003-03-01

Using first-principles pseudopotential calculations, we have investigated the nature of the electronic states with energies within the semiconductor bandgap of abrupt, defect-free As-terminated Al/GaAs(001) junctions. While bonding-/antibonding-like semiconductor evanescent states occur near the valence-/conduction-band edges, the semiconductor midgap region is characterized by a new type of electronic states, not accounted for by commonly accepted models. These states, which correspond to intermetallic bonds between the outermost Ga cations of the semiconductor and Al atoms of the metal, occur near the Fermi energy. They are localized at the interface and are located around the J-point of the Brillouin zone. These new interface states derive from an interaction between localized states of the Al(001) surface and bulk GaAs conduction band states, mediated by localized states of the unreconstructed As-terminated GaAs(001) surface. (author)

Magnetic-field-controlled negative differential conductance in scanning tunneling spectroscopy of graphene npn junction resonators

Science.gov (United States)

Li, Si-Yu; Liu, Haiwen; Qiao, Jia-Bin; Jiang, Hua; He, Lin

2018-03-01

Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages for a selected system and controlling the regions of NDC in curves of current versus voltage (I -V ) is experimentally challenging. Here, we demonstrate a magnetic-field-controlled NDC in scanning tunneling spectroscopy of graphene npn junction resonators. The magnetic field not only can switch on and off the NDC, but also can continuously tune the regions of the NDC in the I -V curves. In the graphene npn junction resonators, magnetic fields generate sharp and pronounced Landau-level peaks with the help of the Klein tunneling of massless Dirac fermions. A tip of scanning tunneling microscope induces a relatively shift of the Landau levels in graphene beneath the tip. Tunneling between the misaligned Landau levels results in the magnetic-field-controlled NDC.

Subnanosecond, high voltage photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (USA)); O' Bannon, B.J. (Rockwell International Corp., Anaheim, CA (USA))

1990-01-01

We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

International Nuclear Information System (INIS)

Jandieri, K; Baranovskii, S D; Stolz, W; Gebhard, F; Guter, W; Hermle, M; Bett, A W

2009-01-01

Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.

Loss models for long Josephson junctions

DEFF Research Database (Denmark)

Olsen, O. H.; Samuelsen, Mogens Rugholm

1984-01-01

A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement.......A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement....

External magnetic field and self-field effects in stacked long Josephson junctions

DEFF Research Database (Denmark)

Carapella, G.; Costabile, G.; Mygind, Jesper

1996-01-01

We have fabricated and tested samples consisting of two long stacked Josephson junctions with direct access to the intermediate electrode, whose thickness is smaller than London penetration depth lambda(L). The electrodes are patterned so that the junctions can be independently biased in the over...

Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by metal-organic vapor phase epitaxy.

Science.gov (United States)

Klangtakai, Pawinee; Sanorpim, Sakuntam; Onabe, Kentaro

2011-12-01

Strained GaAsN T-junction quantum wires (T-QWRs) with different N contents grown on GaAs by two steps metal-organic vapor phase epitaxy in [001] and [110] directions, namely QW1 and QW2 respectively, have been investigated by photoreflectance (PR) spectroscopy. Two GaAsN T-QWRs with different N contents were formed by T-intersection of (i) a 6.4-nm-thick GaAs0.89N0.011 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2 and (ii) a 5.0-nm-thick GaAs0.985N0.015 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2. An evidence of a one-dimensional structure at T-intersection of the two QWs on the (001) and (110) surfaces was established by PR resonances associated with extended states in all the QW and T-QWR samples. It is found that larger lateral confinement energy than 100 meV in both of [001] and [110] directions were achieved for GaAsN T-QWRs. With increasing temperature, the transition energy of GaAsN T-QWRs decreases with a faster shrinking rate compared to that of bulk GaAs. Optical quality of GaAsN T-QWRs is found to be affected by the N-induced band edge fluctuation, which is the unique characteristic of dilute III-V-nitrides.

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

Energy Technology Data Exchange (ETDEWEB)

Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O' Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

2013-12-16

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

Peeled film GaAs solar cell development

International Nuclear Information System (INIS)

Wilt, D.M.; Thomas, R.D.; Bailey, S.G.; Brinker, D.J.; DeAngelo, F.L.

1990-01-01

Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10 6 ) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Al x Ga 1 - x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

Terahertz field-induced ionization and perturbed free induction decay of excitons in bulk GaAs

Science.gov (United States)

Murotani, Yuta; Takayama, Masayuki; Sekiguchi, Fumiya; Kim, Changsu; Akiyama, Hidefumi; Shimano, Ryo

2018-03-01

We investigated the interaction between an intense terahertz (THz) pulse and excitons in bulk GaAs by using THz pump near-infrared (NIR) optical probe spectroscopy. We observed a clear spectral oscillation in the NIR transient absorption spectra at low temperature, which is interpreted as the THz pump-induced perturbed free induction decay (PFID) of the excitonic interband polarization. We performed a numerical simulation based on a microscopic theory and identified that the observed PFID signal originates from the THz field-induced ionization of excitons. Using a real-space representation of the excitonic wave function, we visualized how the ionization of an exciton proceeds under the intense single-cycle THz electric field. We also calculated the nonlinear susceptibility with the lowest-order perturbation theory assuming a weak THz pump, which showed a similar spectral feature with that obtained by the full treatment to field-induced ionization process. This coincidence is attributed to the fact that 1s-excitonic interband polarization is modified predominantly through interactions with the p-wave component of the excitonic wave function. A simple phenomenological expression of the PFID signal is presented to discuss effects of the THz pump pulse duration on the spectral oscillation.

Modeling the effect of deep impurity ionization on GaAs photoconductive switches

Energy Technology Data Exchange (ETDEWEB)

Yee, J.H.; Khanaka, G.H.; Druce, R.L.; Pocha, M.D.

1992-01-01

The ionization coefficient of deep traps in GaAs is determined from a gas breakdown model together with the recent experimental data obtained at LLNL (Lawrence Livermore National Laboratory) and Boeing. Using this coefficient in our nonlinear device transport code, we have investigated theoretically the nonlinear switching phenomena in GaAs devices. The results obtained from our investigations show that if we take into consideration the effect of the field ionization of the deep traps, we can show how the Lock-On'' phenomena could occur in the device.

Modeling the effect of deep impurity ionization on GaAs photoconductive switches

Energy Technology Data Exchange (ETDEWEB)

Yee, J.H.; Khanaka, G.H.; Druce, R.L.; Pocha, M.D.

1992-01-01

The ionization coefficient of deep traps in GaAs is determined from a gas breakdown model together with the recent experimental data obtained at LLNL (Lawrence Livermore National Laboratory) and Boeing. Using this coefficient in our nonlinear device transport code, we have investigated theoretically the nonlinear switching phenomena in GaAs devices. The results obtained from our investigations show that if we take into consideration the effect of the field ionization of the deep traps, we can show how the ``Lock-On`` phenomena could occur in the device.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

2012-01-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

Substrate and Mg doping effects in GaAs nanowires

Directory of Open Access Journals (Sweden)

Perumal Kannappan

2017-10-01

Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

Experimental studies of the charge limit phenomenon in NEA GaAs photocathodes

International Nuclear Information System (INIS)

Tang, H.; Alley, R.K.; Aoyagi, H.; Clendenin, J.E.; Frisch, J.C.; Mulhollan, G.A.; Saez, P.J.; Schultz, D.C.; Turner, J.L.

1994-06-01

Negative electron affinity GaAs photocathodes have been in continuous use at SLAC for generating polarized electron beams since early 1992. If the quantum efficiency of a GaAs cathode is below a critical value, the maximum photoemitted charge with photons of energies close to the band gap in a 2-ns pulse is found to be limited by the intrinsic properties of the cathode instead of by the space charge limit. We have studied this novel charge limit phenomenon in a variety of GaAs photocathodes of different structures and doping densities. We find that the charge limit is strongly dependent on the cathode's quantum efficiency and the extraction electric field, and to a lesser degree on the excitation laser wavelength. In addition, we show that the temporal behavior of the charge limit depends critically on the doping density

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Science.gov (United States)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.

2012-06-22

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

Isocentric integration of intensity-modulated radiotherapy with electron fields improves field junction dose uniformity in postmastectomy radiotherapy.

Science.gov (United States)

Wright, Pauliina; Suilamo, Sami; Lindholm, Paula; Kulmala, Jarmo

2014-08-01

In postmastectomy radiotherapy (PMRT), the dose coverage of the planning target volume (PTV) with additional margins, including the chest wall, supraclavicular, interpectoral, internal mammary and axillar level I-III lymph nodes, is often compromised. Electron fields may improve the medial dose coverage while maintaining organ at risk (OAR) doses at an acceptable level, but at the cost of hot and cold spots at the electron and photon field junction. To improve PMRT dose coverage and uniformity, an isocentric technique combining tangential intensity-modulated (IM)RT fields with one medial electron field was implemented. For 10 postmastectomy patients isocentric IMRT with electron plans were created and compared with a standard electron/photon mix and a standard tangent technique. PTV dose uniformity was evaluated based on the tolerance range (TR), i.e. the ratio of the standard deviation to the mean dose, a dice similarity coefficient (DSC) and the 90% isodose coverage and the hot spot volumes. OAR and contralateral breast doses were also recorded. IMRT with electrons significantly improved the PTV dose homogeneity and conformity based on the TR and DSC values when compared with the standard electron/photon and tangent technique (p < 0.02). The 90% isodose coverage improved to 86% compared with 82% and 80% for the standard techniques (p < 0.02). Compared with the standard electron/photon mix, IMRT smoothed the dose gradient in the electron and photon field junction and the volumes receiving a dose of 110% or more were reduced by a third. For all three strategies, the OAR and contralateral breast doses were within clinically tolerable limits. Based on these results two-field IMRT combined with an electron field is a suitable strategy for PMRT.

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

International Nuclear Information System (INIS)

Chen Liang; Qian Yun-Sheng; Zhang Yi-Jun; Chang Ben-Kang

2012-01-01

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Transient suppression of gap junctional intercellular communication after exposure to 100-nanosecond pulsed electric fields.

Science.gov (United States)

Steuer, Anna; Schmidt, Anke; Labohá, Petra; Babica, Pavel; Kolb, Juergen F

2016-12-01

Gap junctional intercellular communication (GJIC) is an important mechanism that is involved and affected in many diseases and injuries. So far, the effect of nanosecond pulsed electric fields (nsPEFs) on the communication between cells was not investigated. An in vitro approach is presented with rat liver epithelial WB-F344 cells grown and exposed in a monolayer. In order to observe sub-lethal effects, cells were exposed to pulsed electric fields with a duration of 100ns and amplitudes between 10 and 20kV/cm. GJIC strongly decreased within 15min after treatment but recovered within 24h. Gene expression of Cx43 was significantly decreased and associated with a reduced total amount of Cx43 protein. In addition, MAP kinases p38 and Erk1/2, involved in Cx43 phosphorylation, were activated and Cx43 became hyperphosphorylated. Immunofluorescent staining of Cx43 displayed the disassembly of gap junctions. Further, a reorganization of the actin cytoskeleton was observed whereas tight junction protein ZO-1 was not significantly affected. All effects were field- and time-dependent and most pronounced within 30 to 60min after treatment. A better understanding of a possible manipulation of GJIC by nsPEFs might eventually offer a possibility to develop and improve treatments. Copyright © 2016 Elsevier B.V. All rights reserved.

Electrical responses by effects of molecular adsorption on channel and junctions of carbon nanotube field effect transistors

International Nuclear Information System (INIS)

Kang, Donghun; Park, Wanjun

2008-01-01

We report the adsorption effect on the electrical transport of nanotube field effect transistors. The source-drain current is monitored separately for the nanotube channel and the metal-nanotube junction under different pressures of ambient air with a blocking passivation. The metal-nanotube junction shows a significant change from p-type to ambipolar upon vacuum pumping, while the nanotube channel changes modestly. The metal-nanotube junction is found to be far more sensitive to the environment than the nanotube channel. We suggest that the adsorption states underneath the blocking layer do not desorb, and thus the positive carriers would not be diluted upon the vacuum pumping. This result is interpreted as the formation of an i-p-i and p-i-p junction with charge transfer by oxygen molecules. (fast track communication)

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

International Nuclear Information System (INIS)

García, I; Rey-Stolle, I; Algora, C

2012-01-01

An n ++ -GaAs/p ++ -AlGaAs tunnel junction with a peak current density of 10 100 A cm -2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm -2 and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations. (paper)

Cryogenic readout integrated circuits for submillimeter-wave camera

International Nuclear Information System (INIS)

Nagata, H.; Kobayashi, J.; Matsuo, H.; Akiba, M.; Fujiwara, M.

2006-01-01

The development of cryogenic readout circuits for Superconducting Tunneling Junction (Sj) direct detectors for submillimeter wave is presented. A SONY n-channel depletion-mode GaAs Junction Field Effect Transistor (JFET) is a candidate for circuit elements of the preamplifier. We measured electrical characteristics of the GaAs JFETs in the temperature range between 0.3 and 4.2K, and found that the GaAs JFETs work with low power consumption of a few microwatts, and show good current-voltage characteristics without cryogenic anomalies such as kink phenomena or hysteresis behaviors. Furthermore, measurements at 0.3K show that the input referred noise is as low as 0.6μV/Hz at 1Hz. Based on these results and noise calculations, we estimate that a Capacitive Transimpedance Amplifier with the GaAs JFETs will have low noise and STJ detectors will operate below background noise limit

Cryogenic readout integrated circuits for submillimeter-wave camera

Energy Technology Data Exchange (ETDEWEB)

Nagata, H. [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan) and National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan)]. E-mail: hirohisa.nagata@nao.ac.jp; Kobayashi, J. [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); The Graduate University for Advanced Studies, Shonan Village, Hayama, Kanagawa 240-0193 (Japan); Matsuo, H. [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); Akiba, M. [National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795 (Japan); Fujiwara, M. [National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795 (Japan)

2006-04-15

The development of cryogenic readout circuits for Superconducting Tunneling Junction (Sj) direct detectors for submillimeter wave is presented. A SONY n-channel depletion-mode GaAs Junction Field Effect Transistor (JFET) is a candidate for circuit elements of the preamplifier. We measured electrical characteristics of the GaAs JFETs in the temperature range between 0.3 and 4.2K, and found that the GaAs JFETs work with low power consumption of a few microwatts, and show good current-voltage characteristics without cryogenic anomalies such as kink phenomena or hysteresis behaviors. Furthermore, measurements at 0.3K show that the input referred noise is as low as 0.6{mu}V/Hz at 1Hz. Based on these results and noise calculations, we estimate that a Capacitive Transimpedance Amplifier with the GaAs JFETs will have low noise and STJ detectors will operate below background noise limit.

Josephson junction arrays and superconducting wire networks

International Nuclear Information System (INIS)

Lobb, C.J.

1992-01-01

Techniques used to fabricate integrated circuits make it possible to construct superconducting networks containing as many as 10 6 wires or Josephson junctions. Such networks undergo phase transitions from resistive high-temperature states to ordered low-resistance low-temperature states. The nature of the phase transition depends strongly on controllable parameters such as the strength of the superconductivity in each wire or junction and the external magnetic field. This paper will review the physics of these phase transitions, starting with the simplest zero-magnetic field case. This leads to a Kosterlitz-Thouless transition when the junctions or wires are weak, and a simple mean-field fransition when the junctions or wires are strong. Rich behavior, resulting from frustration, occurs in the presence of a magnetic field. (orig.)

Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields

International Nuclear Information System (INIS)

Koyama, M.; Fujiwara, K.; Amano, N.; Maemoto, T.; Sasa, S.; Inoue, M.

2009-01-01

We report on the electron transport properties based on ballistic electrons under magnetic fields in four-terminal ballistic junctions fabricated on an InAs/AlGaSb heterostructure. The four-terminal junction structure is composed of two longitudinal stems with two narrow wires slanted with 30 degree from the perpendicular axis. The electron focusing peak was obtained with the bend resistance measurement. Then it was investigated the nonlinear electron transport property of potential difference between longitudinal stems due to ballistic electrons with applying direct current from narrow wires. Observed nonlinearity showed clear rectification effects which have negative polarity regardless of input voltage polarity. Although this nonlinearity was qualitatively changed due to the Lorentz force under magnetic fields, the degradation of ballistic effects on nonlinear properties were observed when the current increased to higher strength. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nitridation of porous GaAs by an ECR ammonia plasma

International Nuclear Information System (INIS)

Naddaf, M; Hullavarad, S S; Ganesan, V; Bhoraskar, S V

2006-01-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy

Nitridation of porous GaAs by an ECR ammonia plasma

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India); Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic); Hullavarad, S S [Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742 (United States); Ganesan, V [Inter University Consortium, Indore (India); Bhoraskar, S V [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India)

2006-02-15

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Nitridation of porous GaAs by an ECR ammonia plasma

Science.gov (United States)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

The critical current of point symmetric Josephson tunnel junctions

International Nuclear Information System (INIS)

Monaco, Roberto

2016-01-01

Highlights: • We disclose some geometrical properties of the critical current field dependence that apply to a large class of Josephson junctions characterized by a point symmetric shape. • The developed theory is valid for any orientation of the applied magnetic field, therefore it allows the determine the consequences of field misalignment in the experimental setups. • We also address that the threshold curves of Josephson tunnel junctions with complex shapes can be expressed as a linear combination of the threshold curves of junctions with simpler point symmetric shapes. - Abstract: The physics of Josephson tunnel junctions drastically depends on their geometrical configurations. The shape of the junction determines the specific form of the magnetic-field dependence of its Josephson current. Here we address the magnetic diffraction patterns of specially shaped planar Josephson tunnel junctions in the presence of an in-plane magnetic field of arbitrary orientations. We focus on a wide ensemble of junctions whose shape is invariant under point reflection. We analyze the implications of this type of isometry and derive the threshold curves of junctions whose shape is the union or the relative complement of two point symmetric plane figures.

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Uchida, Shiro [Department of Mechanical Science and Engineering Faculty of Engineering, Chiba Institute of Technology, 2-17-1, Tsudanuma, Narashino, Chiba 275-0016 (Japan); Lu, Shu-long, E-mail: sllu2008@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

2016-12-15

Highlights: • High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE. • Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated. • An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained. - Abstract: We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

SU-F-J-55: Feasibility of Supraclavicular Field Treatment by Investigating Variation of Junction Position Between Breast Tangential and Supraclavicular Fields for Deep Inspiration Breath Hold (DIBH) Left Breast Radiation

Energy Technology Data Exchange (ETDEWEB)

Zhao, H; Sarkar, V; Paxton, A; Rassiah-Szegedi, P; Huang, Y; Szegedi, M; Huang, L; Su, F; Salter, B [University Utah, Salt Lake City, UT (United States)

2016-06-15

Purpose: To explore the feasibility of supraclavicular field treatment by investigating the variation of junction position between tangential and supraclavicular fields during left breast radiation using DIBH technique. Methods: Six patients with left breast cancer treated using DIBH technique were included in this study. AlignRT system was used to track patient’s breast surface. During daily treatment, when the patient’s DIBH reached preset AlignRT tolerance of ±3mm for all principle directions (vertical, longitudinal, and lateral), the remaining longitudinal offset was recorded. The average with standard-deviation and the range of daily longitudinal offset for the entire treatment course were calculated for all six patients (93 fractions totally). The ranges of average ± 1σ and 2σ were calculated, and they represent longitudinal field edge error with the confidence level of 68% and 95%. Based on these longitudinal errors, dose at junction between breast tangential and supraclavicular fields with variable gap/overlap sizes was calculated as a percentage of prescription (on a representative patient treatment plan). Results: The average of longitudinal offset for all patients is 0.16±1.32mm, and the range of longitudinal offset is −2.6 to 2.6mm. The range of longitudinal field edge error at 68% confidence level is −1.48 to 1.16mm, and at 95% confidence level is −2.80 to 2.48mm. With a 5mm and 1mm gap, the junction dose could be as low as 37.5% and 84.9% of prescription dose; with a 5mm and 1mm overlap, the junction dose could be as high as 169.3% and 117.6%. Conclusion: We observed longitudinal field edge error at 95% confidence level is about ±2.5mm, and the junction dose could reach 70% hot/cold between different DIBH. However, over the entire course of treatment, the average junction variation for all patients is within 0.2mm. The results from our study shows it is potentially feasible to treat supraclavicular field with breast tangents.

Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

Science.gov (United States)

Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

2012-06-01

GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

International Nuclear Information System (INIS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.; Keyes, B. M.

2000-01-01

Minority carrier lifetimes and interface recombination velocities for GaAs grown on a Si wafer using compositionally graded GeSi buffers have been investigated as a function of GaAs buffer thickness using monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of antiphase domain disorder, with threading dislocation densities measured by etch pit density of 5x10 5 -2x10 6 cm -2 . Analysis indicates no degradation in either minority carrier lifetime or interface recombination velocity down to a GaAs buffer thickness of 0.1 μm. In fact, record high minority carrier lifetimes exceeding 10 ns have been obtained for GaAs on Si with a 0.1 μm GaAs buffer. Secondary ion mass spectroscopy reveals that cross diffusion of Ga, As, and Ge at the GaAs/Ge interface formed on the graded GeSi buffers are below detection limits in the interface region, indicating that polarity control of the GaAs/Ge interface formed on GeSi/Si substrates can be achieved. (c) 2000 American Institute of Physics

Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

Science.gov (United States)

Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

2018-05-01

We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be -oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

Spin-Relaxation Anisotropy in a GaAs Quantum Dot

NARCIS (Netherlands)

Scarlino, P.; Kawakami, E.; Stano, P.; Shafiei, M.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

2014-01-01

We report that the electron spin-relaxation time T1 in a GaAs quantum dot with a spin-1/2 ground state has a 180° periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots as being due to the interplay of Rashba and Dresselhaus spin orbit

Radiation effects on junction field-effect transistors (JFETS), MOSFETs, and bipolar transistors, as related to SSC circuit design

International Nuclear Information System (INIS)

Kennedy, E.J.; Alley, G.T.; Britton, C.L. Jr.; Skubic, P.L.; Gray, B.; Wu, A.

1990-01-01

Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular, at currents ≤1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier

Magnetic properties of MnAs nanoclusters embedded in a GaAs semiconductor matrix

International Nuclear Information System (INIS)

Hai, Pham Nam; Takahashi, Keisuke; Yokoyama, Masafumi; Ohya, Shinobu; Tanaka, Masaaki

2007-01-01

We have clarified fundamental magnetic properties of MnAs nanoclusters (10 nm in diameter) embedded in a thin GaAs matrix (referred to as GaAs:MnAs) through tunneling magnetoresistance (TMR) characteristics of magnetic tunnel junctions (MTJs) consisting of a GaAs:MnAs thin film and a MnAs metal thin film as ferromagnetic electrodes. Although MnAs nanoclusters have coercive forces as small as 150 Oe at 7 K, they show unusually high blocking temperature, which is as large as 300 K. The remanent magnetization of the MnAs nanocluster system linearly decreases with increasing temperature. Those magnetic behaviors cannot be explained by the non-interacting particle model, revealing the important existence of dipolar interactions in MnAs nanocluster system

Structure and homoepitaxial growth of GaAs(6 3 1)

International Nuclear Information System (INIS)

Mendez-Garcia, V.H.; Ramirez-Arenas, F.J.; Lastras-Martinez, A.; Cruz-Hernandez, E.; Pulzara-Mora, A.; Rojas-Ramirez, J.S.; Lopez-Lopez, M.

2006-01-01

We have studied the surface atomic structure of GaAs(6 3 1), and the GaAs growth by molecular beam epitaxy (MBE) on this plane. After the oxide desorption process at 585 deg. Creflection high-energy electron diffraction (RHEED) showed along the [-1 2 0] direction a 2x surface reconstruction for GaAs(6 3 1)A, and a 1x pattern was observed for GaAs(6 3 1)B. By annealing the substrates for 60 min, we observed that on the A surface appeared small hilly-like features, while on GaAs(6 3 1)B surface pits were formed. For GaAs(6 3 1)A, 500 nm-thick GaAs layers were grown at 585 deg. C. The atomic force microscopy (AFM) images at the end of growth showed the self-formation of nanoscale structures with a pyramidal shape enlarged along the [5-9-3] direction. Transversal views of the bulk-truncated GaAs(6 3 1) surface model showed arrays of atomic grooves along this direction, which could influence the formation of the pyramidal structures

Accelerated life testing and temperature dependence of device characteristics in GaAs CHFET devices

Science.gov (United States)

Gallegos, M.; Leon, R.; Vu, D. T.; Okuno, J.; Johnson, A. S.

2002-01-01

Accelerated life testing of GaAs complementary heterojunction field effect transistors (CHFET) was carried out. Temperature dependence of single and synchronous rectifier CHFET device characteristics were also obtained.

Phenomenological approach to bistable behavior of Josephson junctions

International Nuclear Information System (INIS)

Nishi, K.; Nara, S.; Hamanaka, K.

1985-01-01

The interaction of unbiased Josephson junction with external electromagnetic field in the presence of externally applied uniform magnetic field is theoretically examined by means of phenomenological treatment. It is proposed that an irradiated junction with suitably chosen parameters shows a bistable behavior of voltage across the junction as a function of the radiation intensity

The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

Science.gov (United States)

Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

2014-01-01

First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

Full splitting of the first zero-field steps in the I-V curve of Josephson junctions of intermediate length

International Nuclear Information System (INIS)

Hansen, J.B.; Divin, Y.Y.; Mygind, J.

1986-01-01

We report on the observation of full splitting of the first zero-field steps in the I-V curves of Josephson transmission lines of intermediate length Lroughly-equal(3--5)lambda/sub J/, where lambda/sub J/ is the Josephson penetration length. We study in detail how this splitting of the step into two branches depends on the temperature of the junction and on a weak applied magnetic field. We relate the splitting to excitations in the junctions whose behavior is described by the perturbed Sine-Gordon equation

Radon barrier field-test monitoring at Grand Junction tailings pile

International Nuclear Information System (INIS)

Freeman, H.D.; Hartley, J.N.; Gee, G.W.

1983-11-01

Pacific Northwest Laboratory (PNL), as part of the Department of Energy (DOE) Uranium Mill Tailings Remedial Action Project (UMTRAP) technology development program, has conducted three large-scale field tests of radon covers at the uranium mill tailings pile in Grand Junction, Colorado. The barrier systems, monitored for radon flux for over two years, include earthen, multilayer, and asphalt emulsion covers. Results of the monitoring have shown that a variety of cover systems can meet the Environmental Protection Agency (EPA) standard. The most effective covers tested were asphalt emulsion and earthen (mancos shale). 10 references, 7 figures, 1 table

Communication: Electronic and transport properties of molecular junctions under a finite bias: A dual mean field approach

International Nuclear Information System (INIS)

Liu, Shuanglong; Feng, Yuan Ping; Zhang, Chun

2013-01-01

We show that when a molecular junction is under an external bias, its properties cannot be uniquely determined by the total electron density in the same manner as the density functional theory for ground state properties. In order to correctly incorporate bias-induced nonequilibrium effects, we present a dual mean field (DMF) approach. The key idea is that the total electron density together with the density of current-carrying electrons are sufficient to determine the properties of the system. Two mean fields, one for current-carrying electrons and the other one for equilibrium electrons can then be derived. Calculations for a graphene nanoribbon junction show that compared with the commonly used ab initio transport theory, the DMF approach could significantly reduce the electric current at low biases due to the non-equilibrium corrections to the mean field potential in the scattering region

Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

International Nuclear Information System (INIS)

Boyadjiev, T.L.; Semerdjieva, E.G.; Shukrinov, Yu.M.

2007-01-01

We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one

Sn nanothreads in GaAs: experiment and simulation

Science.gov (United States)

Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

2016-12-01

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

Diffusion of $^{52}$Mn in GaAs

CERN Multimedia

2002-01-01

Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of Mn in GaAs under intrinsic conditions in a previously un-investigated temperature region. The aim of the presently proposed experiments is twofold. \\begin{itemize} \\item A quantitative study of Mn diffusion in GaAs at low Mn concentrations would be decisive in providing new information on the diffusion mechanism involved. \\item As Ga vacancies are expected to be involved in the Mn diffusion process it can be predicted that also the GaAs material growth technique most likely plays a role. To clarify this assumption diffusion experiments will be conducted for GaAs material grown by two different techniques. \\end{itemize} For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{52}$Mn$^{+}$ ion beam.

Mixing in T-junctions

NARCIS (Netherlands)

Kok, Jacobus B.W.; van der Wal, S.

1996-01-01

The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

Generation and manipulation of monodispersed ferrofluid emulsions: the effect of a uniform magnetic field in flow-focusing and T-junction configurations.

Science.gov (United States)

Tan, Say Hwa; Nguyen, Nam-Trung

2011-09-01

This paper demonstrates the use of magnetically controlled microfluidic devices to produce monodispersed ferrofluid emulsions. By applying a uniform magnetic field on flow-focusing and T-junction configurations, the size of the ferrofluid emulsions can be actively controlled. The influences of the flow rates, the orientation, and the polarity of the magnetic field on the size of ferrofluid emulsions produced in both flow-focusing and T-junction configurations are compared and discussed.

Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

Energy Technology Data Exchange (ETDEWEB)

Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku , Saitama 338-8570 (Japan); Mochizuki, Toshimitsu; Yoshita, Masahiro; Akiyama, Hidefumi [Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Kuboya, Shigeyuki; Onabe, Kentaro [Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Katayama, Ryuji [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2013-12-04

We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

Performance enhancement of III–V multi-junction solar cells using indium-tin-oxide electrodes

Energy Technology Data Exchange (ETDEWEB)

Kao, Yu-Cheng [Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Ou, Sin-Liang [Department of Materials Science and Engineering, Da-Yeh University, Changhua 515, Taiwan (China); Wu, Fan-Lei [Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Horng, Ray-Hua, E-mail: rhh@nctu.edu.tw [Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2016-08-01

InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates by metalorganic chemical vapor deposition. Three types of front-side electrodes, which included AuGe/Au metal-finger, ITO-finger, and ITO-overcoated, were individually fabricated on the devices and denoted as samples A, B, and C, respectively. The thickness of ITO film is 200 nm, and its transmittance can reach 99% in the visible region. Based on the current density-voltage (J-V) measurement, the short-circuit current density (J{sub sc}) of samples A, B, and C are 8.13, 9.35, and 10.90 mA/cm{sup 2}, while the conversion efficiencies of these three samples are evaluated to be 15.45%, 18.14%, and 20.24%, respectively. This reveals that sample C possesses 31.0% enhancement in the conversion efficiency compared to that of sample A. Additionally, the series resistances (Rs) of samples A, B, and C are 21.43, 22.94, and 6.71 Ω-cm{sup 2}, respectively. The lowest Rs occurred in sample C can be attributed to the elimination of the lateral resistance between electrodes because this device was fabricated with the ITO-overcoated front-side electrode. In sample C, since the ITO front-side electrode can cover overall surface of the device, all regions on the sample surface can extract the electrons, leading to the highest J{sub sc}. - Highlights: • The InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates. • The device was prepared with an ITO-overcoat electrode directly on the n{sup +}-GaAs layer. • This cell has 31.0% enhancement in the η compared to that with an AuGe/Au electrode. • This device possesses the lowest R{sub s} of 6.71 Ω-cm{sup 2} owing to the elimination of R{sub L}. • ITO-overcoat electrode acts a dual role both as the TCL and an anti-reflection layer.

Superconducting flux qubits with π-junctions

International Nuclear Information System (INIS)

Shcherbakova, Anastasia

2014-01-01

In this thesis, we present a fabrication technology of Al/AlO x /Al Josephson junctions on Nb pads. The described technology gives the possibility of combining a variety of Nb-based superconducting circuits, like pi-junction phase-shifters with sub-micron Al/AlO x /Al junctions. Using this approach, we fabricated hybrid Nb/Al flux qubits with and without the SFS-junctions and studied dispersive magnetic field response of these qubits as well as their spectroscopy characteristics.

Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

International Nuclear Information System (INIS)

Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

2011-01-01

Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

Microwave phase locking of Josephson-junction fluxon oscillators

DEFF Research Database (Denmark)

Salerno, M.; Samuelsen, Mogens Rugholm; Filatrella, G.

1990-01-01

Application of the classic McLaughlin-Scott soliton perturbation theory to a Josephson-junction fluxon subjected to a microwave field that interacts with the fluxon only at the junction boundaries reduces the problem of phase locking of the fluxon oscillation to the study of a two-dimensional fun......Application of the classic McLaughlin-Scott soliton perturbation theory to a Josephson-junction fluxon subjected to a microwave field that interacts with the fluxon only at the junction boundaries reduces the problem of phase locking of the fluxon oscillation to the study of a two...

The Design and Optimization of GaAs Single Solar Cells Using the Genetic Algorithm and Silvaco ATLAS

Directory of Open Access Journals (Sweden)

Kamal Attari

2017-01-01

Full Text Available Single-junction solar cells are the most available in the market and the most simple in terms of the realization and fabrication comparing to the other solar devices. However, these single-junction solar cells need more development and optimization for higher conversion efficiency. In addition to the doping densities and compromises between different layers and their best thickness value, the choice of the materials is also an important factor on improving the efficiency. In this paper, an efficient single-junction solar cell model of GaAs is presented and optimized. In the first step, an initial model was simulated and then the results were processed by an algorithm code. In this work, the proposed optimization method is a genetic search algorithm implemented in Matlab receiving ATLAS data to generate an optimum output power solar cell. Other performance parameters such as photogeneration rates, external quantum efficiency (EQE, and internal quantum efficiency (EQI are also obtained. The simulation shows that the proposed method provides significant conversion efficiency improvement of 29.7% under AM1.5G illumination. The other results were Jsc = 34.79 mA/cm2, Voc = 1 V, and fill factor (FF = 85%.

Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Science.gov (United States)

Wang, Qingwen; Klochan, Oleh; Hung, Jo-Tzu; Culcer, Dimitrie; Farrer, Ian; Ritchie, David; Hamilton, Alex

Electrically defined semiconductor quantum dots are appealing systems for spin manipulation and quantum information processing. Thanks to the weak hyperfine interaction and the strong spin-orbit interaction, heavy-holes in GaAs are promising candidates for all-electrical spin manipulation. However, making stable quantum dots in GaAs has only become possible recently, mainly because of difficulties in device fabrication and device stability. Here we present electrical transport measurements of heavy-holes in a lateral double quantum dot based on a GaAs /AlxGa1 - x As heterostructure. We observe clear Pauli spin blockade and show that the lifting of the spin blockade by an external magnetic field is extremely anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit interaction demonstrate quantitative agreement with experimental results, which indicates that the observed anisotropy can be explained by the anisotropic hole g-factor and the surface Dresselhaus spin-orbit coupling.

Annealing-induced Fe oxide nanostructures on GaAs

OpenAIRE

Lu, Y X; Ahmad, E; Xu, Y B; Thompson, S M

2005-01-01

We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy...

Heat load of a GaAs photocathode in an SRF electron gun

International Nuclear Information System (INIS)

Wang Erdong; Zhao Kui; Jorg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; Wu Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

2011-01-01

A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs. (authors)

Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders

International Nuclear Information System (INIS)

Radeka, V.; Rescia, S.; Rehn, L.A.; Manfredi, P.F.; Speziali, V.

1991-11-01

The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described

Josephson tunnel junctions in niobium films

International Nuclear Information System (INIS)

Wiik, Tapio.

1976-12-01

A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

Energy Technology Data Exchange (ETDEWEB)

Muhammad, R., E-mail: rosnita@utm.my; Othaman, Z., E-mail: zulothaman@gmail.com; Ibrahim, Z., E-mail: zuhairi@utm.my; Sakrani, S., E-mail: samsudi3@yahoo.com [Faculty of Science, UniversitiTeknologi Malaysia, 81310 UTM, Johor (Malaysia); Wahab, Y., E-mail: wyussof@gmail.com [Razak School, UniversitiTeknologi Malaysia, 54100 Kuala Lumpur (Malaysia)

2016-04-19

In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

International Nuclear Information System (INIS)

Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

2002-01-01

In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

Energy Technology Data Exchange (ETDEWEB)

Aeberhard, Urs, E-mail: u.aeberhard@fz-juelich.de [IEK-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich (Germany)

2016-07-18

We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and optically injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.

Dynamics of Josephson junction arrays

International Nuclear Information System (INIS)

Hadley, P.

1989-01-01

The dynamics of Josephson junction arrays is a topic that lies at the intersection of the fields of nonlinear dynamics and Josephson junction technology. The series arrays considered here consist of several rapidly oscillating Josephson junctions where each junction is coupled equally to every other junction. The purpose of this study is to understand phaselocking and other cooperative dynamics of this system. Previously, little was known about high dimensional nonlinear systems of this sort. Numerical simulations are used to study the dynamics of these arrays. Three distinct types of periodic solutions to the array equations were observed as well as period doubled and chaotic solutions. One of the periodic solutions is the symmetric, in-phase solution where all of the junctions oscillate identically. The other two periodic solutions are symmetry-broken solutions where all of the junction do not oscillate identically. The symmetry-broken solutions are highly degenerate. As many as (N - 1) stable solutions can coexist for an array of N junctions. Understanding the stability of these several solutions and the transitions among them is vital to the design of useful devices

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

Science.gov (United States)

Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

2010-05-20

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

Harmonic generations in a lens-shaped GaAs quantum dot: Dresselhaus and Rashba spin-orbit couplings under electric and magnetic fields

Science.gov (United States)

Zamani, A.; Azargoshasb, T.; Niknam, E.; Mohammadhosseini, E.

2017-06-01

In this work, effects of external electric and magnetic fields in the presence of both Rashba and Dresselhaus spin-orbit couplings on the second and third harmonic generations (SHG and THG) of a lens-shaped GaAs quantum dot are studied. Energy eigenvalues and eigenvectors are calculated numerically and optical properties are obtained using the compact density matrix approach. Our results reveal that, an increase in the magnetic field, leads to both red and blue shifts in resonant peaks of both SHG and THG. On the other hand, augmentation of electric field leads to blue shift in all resonant peaks except the first peak related to lowest transition. Also the dipole moment matrix elements increase by enhancing both electric and magnetic fields. Finally the effect of dot size is studied and results illustrate that increment in size reduces the transition energies except the lowest one and thus leads to red shift in resonant peaks while the first peak remains constant.

Gap junctions mediate large-scale Turing structures in a mean-field cortex driven by subcortical noise

Science.gov (United States)

Steyn-Ross, Moira L.; Steyn-Ross, D. A.; Wilson, M. T.; Sleigh, J. W.

2007-07-01

One of the grand puzzles in neuroscience is establishing the link between cognition and the disparate patterns of spontaneous and task-induced brain activity that can be measured clinically using a wide range of detection modalities such as scalp electrodes and imaging tomography. High-level brain function is not a single-neuron property, yet emerges as a cooperative phenomenon of multiply-interacting populations of neurons. Therefore a fruitful modeling approach is to picture the cerebral cortex as a continuum characterized by parameters that have been averaged over a small volume of cortical tissue. Such mean-field cortical models have been used to investigate gross patterns of brain behavior such as anesthesia, the cycles of natural sleep, memory and erasure in slow-wave sleep, and epilepsy. There is persuasive and accumulating evidence that direct gap-junction connections between inhibitory neurons promote synchronous oscillatory behavior both locally and across distances of some centimeters, but, to date, continuum models have ignored gap-junction connectivity. In this paper we employ simple mean-field arguments to derive an expression for D2 , the diffusive coupling strength arising from gap-junction connections between inhibitory neurons. Using recent neurophysiological measurements reported by Fukuda [J. Neurosci. 26, 3434 (2006)], we estimate an upper limit of D2≈0.6cm2 . We apply a linear stability analysis to a standard mean-field cortical model, augmented with gap-junction diffusion, and find this value for the diffusive coupling strength to be close to the critical value required to destabilize the homogeneous steady state. Computer simulations demonstrate that larger values of D2 cause the noise-driven model cortex to spontaneously crystalize into random mazelike Turing structures: centimeter-scale spatial patterns in which regions of high-firing activity are intermixed with regions of low-firing activity. These structures are consistent with the

1981 radon barrier field test at Grand Junction uranium mill tailings pile

International Nuclear Information System (INIS)

Hartley, J.N.; Gee, G.W.; Baker, E.G.; Freeman, H.D.

1983-04-01

Technologies to reduce radon released from uranium mill tailings are being investigated by Pacific Northwest Laboratory as part of the Department of Energy's Uranium Mill Tailings Remedial Action Project (UMTRAP) Technology development program. These technologies include: (1) earthen cover systems, (2) multilayer cover systems, and (3) asphalt emulsion radon barrier systems. During the summer of 1981, a field test was initiated at the Grand Junction, Colorado, uranium tailings pile to evaluate and compare the effectiveness of each radon barrier system. Test plots cover about 1.2 ha (3 acres). The field test has demonstrated the effectiveness of all three cover systems in reducing radon release to near background levels ( 2 s - 1 ). In conjunction with the field tests, column tests (1.8 m diameter) were initiated with cover systems similar to those in the larger field test plots. The column tests allow a direct comparison of the two test procedures and also provide detailed information on radon transport

Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

International Nuclear Information System (INIS)

Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

1982-01-01

The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

Gravitation at the Josephson Junction

Directory of Open Access Journals (Sweden)

Victor Atanasov

2018-01-01

Full Text Available A geometric potential from the kinetic term of a constrained to a curved hyperplane of space-time quantum superconducting condensate is derived. An energy conservation relation involving the geometric field at every material point in the superconductor is demonstrated. At a Josephson junction the energy conservation relation implies the possibility of transforming electric energy into geometric field energy, that is, curvature of space-time. Experimental procedures to verify that the Josephson junction can act as a voltage-to-curvature converter are discussed.

Chirality effect in disordered graphene ribbon junctions

International Nuclear Information System (INIS)

Long Wen

2012-01-01

We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon. (paper)

Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

Science.gov (United States)

Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

2016-10-03

Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

Observation of supercurrent in graphene-based Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2015-07-01

Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

High-performance passive microwave survey on Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Denisov, A.G.; Radzikhovsky, V.N.; Kudeliya, A.M. [State Research Center of Superconductive Radioelectronics, Kiev (Ukraine)

1994-12-31

The quasi-optical generations of image of objects with their internal structure in millimeter (MM) and submillimeter (SMM) bands is one of the prime problems of modern radioelectronics. The main advantage of passive MM imaging systems in comparison with visible and infrared (IR) systems is small attenuation of signals in fog, cloud, smoke, dust and other obscurants. However at a panoramic scanning of space the observation time lengthens and thereby the information processing rate becomes restricted. So that single-channel system cannot image in real time. Therefore we must use many radiometers in parallel to reduce the observation time. Such system must contain receiving sensors as pixels in multibeam antenna. The use of Josephson Junctions (JJ) for this purpose together with the cryoelectronic devices like GaAs FET or SQUIDS for signal amplifications after JJ is of particular interest in this case.

High-performance passive microwave survey on Josephson junctions

International Nuclear Information System (INIS)

Denisov, A.G.; Radzikhovsky, V.N.; Kudeliya, A.M.

1994-01-01

The quasi-optical generations of image of objects with their internal structure in millimeter (MM) and submillimeter (SMM) bands is one of the prime problems of modern radioelectronics. The main advantage of passive MM imaging systems in comparison with visible and infrared (IR) systems is small attenuation of signals in fog, cloud, smoke, dust and other obscurants. However at a panoramic scanning of space the observation time lengthens and thereby the information processing rate becomes restricted. So that single-channel system cannot image in real time. Therefore we must use many radiometers in parallel to reduce the observation time. Such system must contain receiving sensors as pixels in multibeam antenna. The use of Josephson Junctions (JJ) for this purpose together with the cryoelectronic devices like GaAs FET or SQUIDS for signal amplifications after JJ is of particular interest in this case

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

International Nuclear Information System (INIS)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-01-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

Energy Technology Data Exchange (ETDEWEB)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-04-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Modification of the Absorption Edge of GaAs Arising from Hot-Electron Effects

DEFF Research Database (Denmark)

McGroddy, J. C.; Christensen, Ove

1973-01-01

We have observed a large enhancement of the electric-field-induced optical absorption arising from hot-electron effects in n-type GaAs at 77 K. The magnitude and field dependence of the enhancement can be approximately accounted for by a theory attributing the effect to broadening of the final...... states of the optical transitions by interaction with the nonequilibrium optical phonons produced by the hot electrons....

Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

International Nuclear Information System (INIS)

Leem, Jung Woo; Yu, Jae Su; Kim, Jong Nam; Noh, Sam Kyu

2014-01-01

We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J sc . The maximum J sc , which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J sc value of 13.92 mA/cm 2 is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Leem, Jung Woo; Yu, Jae Su [Kyung Hee University, Yongin (Korea, Republic of); Kim, Jong Nam [Pukyung National University, Pusan (Korea, Republic of); Noh, Sam Kyu [Korea Research Institute of Standards and Science, Daejon (Korea, Republic of)

2014-05-15

We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J{sub sc}. The maximum J{sub sc}, which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J{sub sc} value of 13.92 mA/cm{sup 2} is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

Double-well potential in annular Josephson junction

International Nuclear Information System (INIS)

Shaju, P.D.; Kuriakose, V.C.

2004-01-01

A double-well potential suitable for quantum-coherent vortex tunnelling can be created in an annular Josephson junction by inserting a microshort in the junction and by applying an in-plane dc magnetic field. Analysis shows that the intensity of the magnetic field determines the depth of the potential well and the strength of the microshort controls the potential barrier height while a dc bias across the junction tilts the potential well. At milli-Kelvin temperatures, the system is expected to behave as a quantum two-level system and may be useful in designing vortex qubits

Parametric frequency conversion in long Josephson junctions

International Nuclear Information System (INIS)

Irie, F.; Ashihara, S.; Yoshida, K.

1976-01-01

Current steps at voltages corresponding to the parametric coupling between an applied r.f. field and junction resonant modes have been observed in long Josephson tunnel junctions in the flux-flow state. The observed periodic variations of the step height due to the applied magnetic field are explained quantitatively by a perturbational analysis using Josephson phase equations. The present study demonstrates that the moving vortex array can serve as a coherent pump wave for signal waves propagating in the barrier region, which indicates, as a result, the possibility of traveling-wave parametric devices with long Josephson tunnel junctions. (author)

Geodynamical simulation of the RRF triple junction

Science.gov (United States)

Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

2017-12-01

Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

Panel fabrication utilizing GaAs solar cells

Science.gov (United States)

Mardesich, N.

1984-01-01

The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Science.gov (United States)

Xiao-Wen, Xi; Chang-Chun, Chai; Gang, Zhao; Yin-Tang, Yang; Xin-Hai, Yu; Yang, Liu

2016-04-01

The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

Preparation of GaAs photocathodes at low temperature

International Nuclear Information System (INIS)

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated

Superconductivity and its pressure variation in GaAs

International Nuclear Information System (INIS)

Nirmala Louis, C.; Jayam, Sr. Gerardin; Amalraj, A.

2005-01-01

The electronic band structure, metallization, phase transition and superconducting transition of gallium arsenide under pressure are studied using TB-LMTO method. Metallization occurs via indirect closing of band gap between Γ and X points. GaAs becomes superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The ground state properties are analyzed by fitting the calculated total energies to the Birch-Murnaghan's equation of state. The superconducting transition temperatures (T c ) obtained as a function of pressure for both the ZnS and NaCl structures and GaAs comes under the class of pressure induced superconductor. When pressure is increased T c increases in both the normal and high pressure structures. The dependence of T c on electron-phonon mass enhancement factor λ shows that GaAs is an electron-phonon-mediated superconductor. Also it is found that GaAs retained in their normal structure under high pressure give appreciably high T c . (author)

Transport properties of molecular junctions

CERN Document Server

Zimbovskaya, Natalya A

2013-01-01

A comprehensive overview of the physical mechanisms that control electron transport and the characteristics of metal-molecule-metal (MMM) junctions is presented. As far as possible, methods and formalisms presented elsewhere to analyze electron transport through molecules are avoided. This title introduces basic concepts—a description of the electron transport through molecular junctions—and briefly describes relevant experimental methods. Theoretical methods commonly used to analyze the electron transport through molecules are presented. Various effects that manifest in the electron transport through MMMs, as well as the basics of density-functional theory and its applications to electronic structure calculations in molecules are presented. Nanoelectronic applications of molecular junctions and similar systems are discussed as well. Molecular electronics is a diverse and rapidly growing field. Transport Properties of Molecular Junctions presents an up-to-date survey of the field suitable for researchers ...

Soliton excitations in Josephson tunnel junctions

DEFF Research Database (Denmark)

Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

1982-01-01

A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L / λJ ratios. The soliton picture is found to apply well on both relatively long (L / λJ=6) and intermediate (L / λJ=2) junctions. We find good...... agreement for the current-voltage characteristics, power output, and for the shape and height of the zero-field steps (ZFS). Two distinct modes of soliton oscillations are observed: (i) a bunched or congealed mode giving rise to the fundamental frequency f1 on all ZFS's and (ii) a "symmetric" mode which...... on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

Structural and optical properties of vapor-etched porous GaAs

Energy Technology Data Exchange (ETDEWEB)

Smida, A.; Laatar, F. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M., E-mail: mhdhassen@yahoo.fr [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

2016-08-15

This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO{sub 3} as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

Structural and optical properties of vapor-etched porous GaAs

International Nuclear Information System (INIS)

Smida, A.; Laatar, F.; Hassen, M.; Ezzaouia, H.

2016-01-01

This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO 3 as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

Directory of Open Access Journals (Sweden)

Shakhmin Alexey

2011-01-01

Full Text Available Abstract Electron beam methods, such as cathodoluminescence (CL that is based on an electron-probe microanalyser, and (200 dark field and high angle annular dark field (HAADF in a scanning transmission electron microscope, are used to study the deterioration of interfaces in InGaP/GaAs system with the GaAs QW on top of InGaP. A CL emission peak different from that of the QW was detected. By using HAADF, it is found that the GaAs QW does not exist any longer, being replaced by extra interlayer(s that are different from GaAs and InGaP because of atomic rearrangements at the interface. The nature and composition of the interlayer(s are determined by HAADF. Such changes of the nominal GaAs QW can account for the emission observed by CL.

Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors

Science.gov (United States)

Moglestue, C.; Buot, F. A.; Anderson, W. T.

1995-08-01

The lattice heating rate has been calculated for GaAs field-effect transistors of different source-drain channel design by means of the ensemble Monte Carlo particle model. Transport of carriers in the substrate and the presence of free surface charges are also included in our simulation. The actual heat generation was obtained by accounting for the energy exchanged with the lattice of the semiconductor during phonon scattering. It was found that the maximum heating rate takes place below the surface near the drain end of the gate. The results correlate well with a previous hydrodynamic energy transport estimate of the electronic energy density, but shifted slightly more towards the drain. These results further emphasize the adverse effects of hot electrons on the Ohmic contacts.

Comparisons of single event vulnerability of GaAs SRAMS

Science.gov (United States)

Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

1986-12-01

A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

Visualizing supercurrents in 0-{pi} ferromagnetic Josephson tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Goldobin, Edward; Guerlich, Christian; Gaber, Tobias; Koelle, Dieter; Kleiner, Reinhold [Physikalisches Institut and Center for Collective Quantum Phenomena, Universitaet Tuebingen (Germany); Weides, Martin; Kohlstedt, Hermann [Institute of Solid State Physics, Reserch Center Juelich (Germany)

2009-07-01

So-called 0 and {pi} Josephson junctions can be treated as having positive and negative critical currents. This implies that the same phase shift applied to a Josephson junction causes counterflow of supercurrents in 0 and in {pi} junctions connected in parallel provided they are short in comparison with Josephson penetration depth {lambda}{sub J}. We have fabricated several 0, {pi}, 0-{pi}, 0-{pi}-0 and 20 x (0-{pi}-) planar superconductor-insulator-ferromagnet-superconductor Josephson junctions and studied the spatial supercurrent density distribution j{sub s}(x,y) across the junction area using low temperature scanning electron microscopy. At zero magnetic field we clearly see counterflow of the supercurrents in 0 and {pi} regions. The picture also changes consistently in the applied magnetic field.

Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons

International Nuclear Information System (INIS)

Fromme, B.; Baum, G.; Goeckel, D.; Raith, W.

1989-01-01

Circularly polarized light is emitted in radiative transitions of polarized electrons from the conduction to the valence band in GaAs or GaAs 1-x P x crystals. The degree of light polarization is directly related to the polarization of the conduction-band electrons at the instant of recombination and allows conclusions about the depolarization of electrons in the conduction band. The depolarization is caused by spin-relaxation processes. The efficiency of these processes depends on crystal type, crystal temperature, degree of doping, and kinetic energy of the electrons. Highly p-doped GaAs and GaAs 0.62 P 0.38 crystals (N A >1x10 19 atoms/cm 3 ) were bombarded with polarized electrons (initial polarization 38%), and the spectral distribution and the circular polarization of the emitted recombination radiation were measured. The initial kinetic energy of the electrons in the conduction band was varied between 5 and 1000 eV. The measurements of the spectral distribution show that the electrons are thermalized before recombination occurs, independent of their initial energy. An important thermalization process in this energy range is the excitation of crystal electrons by electron-hole pair creation. The circular polarization of the recombination radiation lies below 1% in the whole energy range. It decreases with increasing electron energy but is still of measurable magnitude at 100 eV in the case of GaAs 0.62 P 0.38 . The circular polarization is smaller for GaAs than for GaAs 0.62 P 0.38 , which we attribute to more efficient spin relaxation in GaAs

Multiplication in Silicon p-n Junctions

DEFF Research Database (Denmark)

Moll, John L.

1965-01-01

Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells

International Nuclear Information System (INIS)

Khan, Aurangzeb; Yamaguchi, Masafumi; Dharmaras, Nathaji; Yamada, Takashi; Tanabe, Tatsuya; Takagishi, Shigenori; Itoh, Hisayoshi; Ohshima, Takeshi

2001-01-01

We have explored the superior radiation tolerance of metal organic chemical vapor deposition (MOCVD) grown, low bandgap, (0.95eV) InGaAsP solar cells as compared to GaAs-on-Ge cells, after 1 MeV electron irradiation. The minority carrier injection due to forward bias and light illumination under low concentration ratio, can lead to enhanced recovery of radiation damage in InGaAsP n + -p junction solar cells. An injection anneal activation energy (0.58eV) of the defects involved in damage/recovery of the InGaAsP solar cells has been estimated from the resultant recovery of the solar cell properties following minority carrier injection. The results suggest that low bandgap radiation resistant InGaAsP (0.95eV) lattice matched to InP substrates provide an alternative to use as bottom cells in multi-junction solar cells instead of less radiation ressitant conventional GaAs based solar cells for space applications. (author)

Femtosecond pulsed laser ablation of GaAs

International Nuclear Information System (INIS)

Trelenberg, T.W.; Dinh, L.N.; Saw, C.K.; Stuart, B.C.; Balooch, M.

2004-01-01

The properties of femtosecond-pulsed laser deposited GaAs nanoclusters were investigated. Nanoclusters of GaAs were produced by laser ablating a single crystal GaAs target in vacuum or in a buffer gas using a Ti-sapphire laser with a 150 fs minimum pulse length. For in-vacuum deposition, X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) revealed that the average cluster size was approximately 7 nm for laser pulse lengths between 150 fs and 25 ps. The average cluster size dropped to approximately 1.5 nm at a pulse length of 500 ps. It was also observed that film thickness decreased with increasing laser pulse length. A reflective coating, which accumulated on the laser admission window during ablation, reduced the amount of laser energy reaching the target for subsequent laser shots and developed more rapidly at longer pulse lengths. This observation indicates that non-stoichiometric (metallic) ablatants were produced more readily at longer pulse lengths. The angular distribution of ejected material about the target normal was well fitted to a bi-cosine distribution of cos 47 θ+ cos 4 θ for ablation in vacuum using 150 fs pulses. XPS and AES revealed that the vacuum-deposited films contained excess amorphous Ga or As in addition to the stoichiometric GaAs nanocrystals seen with XRD. However, films containing only the GaAs nanocrystals were produced when ablation was carried out in the presence of a buffer gas with a pressure in excess of 6.67 Pa. At buffer gas pressure on the order of 1 Torr, it was found that the stoichiometry of the ablated target was also preserved. These experiments indicate that both laser pulse length and buffer gas pressure play important roles in the formation of multi-element nanocrystals by laser ablation. The effects of gas pressure on the target's morphology and the size of the GaAs nanocrystals formed will also be discussed

Development of GaAs Detectors for Physics at the LHC

CERN Multimedia

Chu, Zhonghua; Krais, R; Rente, C; Syben, O; Tenbusch, F; Toporowsky, M; Xiao, Wenjiang; Cavallini, A; Fiori, F; Edwards, M; Geppert, R; Goppert, R; Haberla, C; Hornung, M F; Irsigler, R; Rogalla, M; Beaumont, S; Raine, C; Skillicorn, I; Margelevicius, J; Meshkinis, S; Smetana, S; Jones, B; Santana, J; Sloan, T; Zdansky, K; Alexiev, D; Donnelly, I J; Canali, C; Chiossi, C; Nava, F; Pavan, P; Kubasta, J; Tomiak, Z; Tchmil, V; Tchountonov, A; Tsioupa, I; Dogru, M; Gray, R; Hou, Yuqian; Manolopoulos, S; Walsh, S; Aizenshtadt, G; Budnitsky, D L; Gossen, A; Khludkov, S; Koretskaya, O B; Okaevitch, L; Potapov, A; Stepanov, V E; Tolbanov, O; Tyagev, A; Matulionis, A; Pozela, J; Kavaliauskiene, G; Kazukauskas, V; Kiliulis, R; Rinkevicius, V; Slenys, S; Storasta, J V

2002-01-01

% RD-8 Development of GaAs Detectors for Physics at the LHC \\\\ \\\\The aims of the collaboration are to investigate the available material options, performance and limitations of simple pad, pixel and microstrip GaAs detectors for minimum ionising particles with radiation hardness and speed which are competitive with silicon detectors. This new technology was originally developed within our university laboratories but now benefits from increasing industrial interest and collaboration in detector fabrication. Initial steps have also been taken towards the fabrication of GaAs preamplifiers to match the detectors in radiation hardness. The programme of work aims to construct a demonstration detector module for an LHC forward tracker based on GaAs.

GaAs Coupled Micro Resonators with Enhanced Sensitive Mass Detection

Directory of Open Access Journals (Sweden)

Tony Chopard

2014-12-01

Full Text Available This work demonstrates the improvement of mass detection sensitivity and time response using a simple sensor structure. Indeed, complicated technological processes leading to very brittle sensing structures are often required to reach high sensitivity when we want to detect specific molecules in biological fields. These developments constitute an obstacle to the early diagnosis of diseases. An alternative is the design of coupled structures. In this study, the device is based on the piezoelectric excitation and detection of two GaAs microstructures vibrating in antisymmetric modes. GaAs is a crystal which has the advantage to be micromachined easily using typical clean room processes. Moreover, we showed its high potential in direct biofunctionalisation for use in the biological field. A specific design of the device was performed to improve the detection at low mass and an original detection method has been developed. The principle is to exploit the variation in amplitude at the initial resonance frequency which has in the vicinity of weak added mass the greatest slope. Therefore, we get a very good resolution for an infinitely weak mass: relative voltage variation of 8%/1 fg. The analysis is based on results obtained by finite element simulation.

Effects induced by γ-radiation on the noise in junction field-effect transistors belonging to monolithic processes

International Nuclear Information System (INIS)

Manfredi, P.F.; Re, V.; Manfredi, P.F.; Speziali, V.; Re, V.; Manfredi, P.F.; Speziali, V.

1999-01-01

The effects of γ-rays on the noise characteristics of junction field-effect transistors belonging to three monolithic technologies have been investigated. A substantially different behavior of the radiation-induced noise in N and P -channel JFETs was observed. This may result in interesting design considerations. (authors)

The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

International Nuclear Information System (INIS)

Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

2009-01-01

The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

International Nuclear Information System (INIS)

Auden, E.C.; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

2017-01-01

The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al_0_._3Ga_0_._7As/GaAs/Al_0_._2_5Ga_0_._7_5As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

Energy Technology Data Exchange (ETDEWEB)

Auden, E.C., E-mail: eauden@sandia.gov; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

2017-05-15

The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al{sub 0.3}Ga{sub 0.7}As/GaAs/Al{sub 0.25}Ga{sub 0.75}As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

Axial p-n-junctions in nanowires.

Science.gov (United States)

Fernandes, C; Shik, A; Byrne, K; Lynall, D; Blumin, M; Saveliev, I; Ruda, H E

2015-02-27

The charge distribution and potential profile of p-n-junctions in thin semiconductor nanowires (NWs) were analyzed. The characteristics of screening in one-dimensional systems result in a specific profile with large electric field at the boundary between the n- and p- regions, and long tails with a logarithmic drop in the potential and charge density. As a result of these tails, the junction properties depend sensitively on the geometry of external contacts and its capacity has an anomalously large value and frequency dispersion. In the presence of an external voltage, electrons and holes in the NWs can not be described by constant quasi-Fermi levels, due to small values of the average electric field, mobility, and lifetime of carriers. Thus, instead of the classical Sah-Noice-Shockley theory, the junction current-voltage characteristic was described by an alternative theory suitable for fast generation-recombination and slow diffusion-drift processes. For the non-uniform electric field in the junction, this theory predicts the forward branch of the characteristic to have a non-ideality factor η several times larger than the values 1 < η < 2 from classical theory. Such values of η have been experimentally observed by a number of researchers, as well as in the present work.

Status of fully integrated GaAs particle detectors

International Nuclear Information System (INIS)

Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

1999-01-01

GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

International Nuclear Information System (INIS)

Lewandowski, S.J.

1991-01-01

A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-T c superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming a series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-T c materials are pointed out as a potential source of additional noise

Atomic hydrogen cleaning of GaAs photocathodes

International Nuclear Information System (INIS)

Poelker, M.; Price, J.; Sinclair, C.

1997-01-01

It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs

Optical pumping of hot phonons in GaAs

International Nuclear Information System (INIS)

Collins, C.L.; Yu, P.Y.

1982-01-01

Optical pumping of hot LO phonons in GaAs has been studied as a function of the excitation photon frequency. The experimental results are in good agreement with a model calculation which includes both inter- and intra-valley electron-phonon scatterings. The GAMMA-L and GAMMA-X intervalley electron-phonon interactions in GaAs have been estimated

Magnetic properties of slablike Josephson-junction arrays

International Nuclear Information System (INIS)

Chen, D.; Sanchez, A.; Hernando, A.

1994-01-01

Magnetic properties of infinitely long and wide slablike Josephson-junction arrays (JJA's) consisting of 2N+1 rows of grains are calculated for the dc Josephson effect with gauge-invariant phase differences. When N is large, the intergranular magnetization curve, M J (H), of the JJA's in low fields approaches that of uniform Josephson junctions with lengths equal to the thicknesses of the JJA's, but in a larger field interval, its amplitude is dually modulated with periods determined by the junction and void areas. M J (H) curves for small N are more complicated. The concept of Josephson vortices and the application of the results to high-T c superconductors are discussed

Spin injection into GaAs

Energy Technology Data Exchange (ETDEWEB)

Endres, Bernhard

2013-11-01

In this work spin injection into GaAs from Fe and (Ga,Mn)As was investigated. For the realization of any spintronic device the detailed knowledge about the spin lifetime, the spatial distribution of spin-polarized carriers and the influence of electric fields is essential. In the present work all these aspects have been analyzed by optical measurements of the polar magneto-optic Kerr effect (pMOKE) at the cleaved edge of the samples. Besides the attempt to observe spin pumping and thermal spin injection into n-GaAs the spin solar cell effect is demonstrated, a novel mechanism for the optical generation of spins in semiconductors with potential for future spintronic applications. Also important for spin-based devices as transistors is the presented realization of electrical spin injection into a two-dimensional electron gas.

Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch

International Nuclear Information System (INIS)

Ma Xiangrong; Shi Wei; Xiang Mei

2013-01-01

Experiments with the limited space-charge accumulation (LSA) mode of oscillation in a large gap semi-insulating (SI) GaAs photoconductive semiconductor switch (PCSS) are discussed. It has been observed that growth and drift of a photo-activated charge domain (PACD) are quenched only when the bias voltage is more than twice the threshold voltage. The original negative resistance characteristics are directly utilized in the LSA mode; during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity—electric field characteristic. The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time. The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage. (semiconductor devices)

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Vasiliev, A. L.; Imamov, R. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Trunkin, I. N. [National Research Centre “Kurchatov Institute” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)

2017-01-15

The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.

Implantation annealing in GaAs by incoherent light

International Nuclear Information System (INIS)

Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

1983-01-01

Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

Growth and characteristics of p-type doped GaAs nanowire

Science.gov (United States)

Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-05-01

The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

Spin-Dephasing Anisotropy for Electrons in a Diffusive Quasi-1D GaAs Wire

NARCIS (Netherlands)

Liu, J.; Last, T.; Koop, E. J.; Denega, S.; van Wees, B. J.; van der Wal, C. H.

We present a numerical study of dephasing of electron spin ensembles in a diffusive quasi-one-dimensional GaAs wire due to the D'yakonov-Perel' spin-dephasing mechanism. For widths of the wire below the spin precession length and for equal strength of Rashba and linear Dresselhaus spin-orbit fields

Observation of the anomalous Hall effect in GaAs

International Nuclear Information System (INIS)

Miah, M Idrish

2007-01-01

Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect

Observation of the anomalous Hall effect in GaAs

Energy Technology Data Exchange (ETDEWEB)

Miah, M Idrish [Nanoscale Science and Technology Centre, School of Science, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

2007-03-21

Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect.

Elementary excitations and quasi-two-dimensional behaviour in a GaAs field effect transistor

International Nuclear Information System (INIS)

Tomak, M.; Sernelius, B.E.; Berggren, K.F.

1983-09-01

The elementary excitation modes in a narrow channel of conducting electrons in a special GaAs FET are evaluated within the RPA-approximation. The system is found to be quasi-two-dimensional when the width of the channel is small, i.e. there are collective excitations with a dispersion very close to the strictly 2D form. In addition to the low-lying quasi-2D-mode there are higher collective modes associated with the sub-band structure of the device. (author)

MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

Science.gov (United States)

Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

1989-12-01

A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

Mutual Phase Locking of Fluxons in Stacked Long Josephson Junctions: Simulations and Experiment

DEFF Research Database (Denmark)

Carapella, Giovanni; Costabile, Giovanni; Filatrella, Giovanni

1997-01-01

We report on the experimental observation of reciprocal phase-locking in stacked $Nb-AlO_x-Nb$ Josephson junctions having overlap geometry. When the junctions are independently biased in zero external magnetic field, they each exhibit several Zero Field Steps. Biasing both the junctions on the Ze...

GaAs nanopillar-array solar cells employing in situ surface passivation

Science.gov (United States)

Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong; Huffaker, Diana L.

2013-01-01

Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p–n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm−2 and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode. PMID:23422665

The cranial-spinal junction in medulloblastoma: does it matter?

International Nuclear Information System (INIS)

Narayana, Ashwatha; Jeswani, Sam; Paulino, Arnold C.

1999-01-01

Purpose: Late effects of treatment in children and young adults with medulloblastoma can be influenced by the technique employed in radiating the craniospinal axis. The purpose of this study is to determine whether the placement of the cranial-spinal junction has an impact on dose to the cervical spinal cord and surrounding organs. Methods and Materials: Five patients underwent computed tomography (CT) simulation in the prone position for craniospinal irradiation. A dose of 36 Gy was prescribed to the entire neuraxis. The doses to the cervical spinal cord and surrounding organs were calculated using a cranial-spinal junction at the C1-C2 vertebral interspace (high junction) or at the lowest point in the neck, with exclusion of the shoulders in the lateral cranial fields (low junction).The volume of critical organs at risk, as well as dose to these structures using the cranial and spinal field(s) were outlined and calculated using the CMS FOCUS 3-dimensional treatment planning system. Results: The average dose to the cervical spinal cord was 11.9% higher than the prescribed dose with the low junction, and 6.7% higher with the high junction. However, doses to the thyroid gland, mandible, pharynx, and larynx were increased by an average of 29.6%, 75.8%, 70.6%, and 227.7%, respectively, by the use of the high junction compared to the low junction. Conclusion: A higher dose to the cervical spinal cord can be minimized by using a high junction. However, this would be at the cost of substantially increased doses to surrounding organs such as the thyroid gland, mandible, pharynx, and larynx. This can be critical in children and young adults, where hypothyroidism, mandibular hypoplasia, and development of second malignancies may be a late sequela of radiation therapy

Electron optics with ballistic graphene junctions

Science.gov (United States)

Chen, Shaowen

Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snell's law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Efforts toward sharper pn junction and possibility of zero field Veselago lensing will also be discussed. This work is supported by the Semiconductor Research Corporations NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX).

Multicentre dosimetric comparison of photon-junctioning techniques in head and neck radiotherapy

International Nuclear Information System (INIS)

Kron, T.

2003-01-01

Because many head and neck radiotherapy treatment techniques rely on a junction between X-ray fields, it was the aim of the present study to investigate the use of different junctioning techniques and the affect on the dose across the junction. Techniques in use at nine radiotherapy centres in Australia were investigated using thermoluminescence dosimetry (TLD). The techniques could broadly be divided into two groups: (i) use of the light field to match the fields after moving the patient; and (ii) use of asymmetric collimation to create a single isocentre located in the junction. The mean dose at the junction and its reproducibility was studied in five consecutive treatments in each centre using 25 TLD chips placed throughout the junction in an anthropomorphic phantom. There was a tendency for the mono-isocentric technique to deliver a lower, more accurate mean dose at the junction (Group I: 1.22 Gy (n = 8) vs Group II: 0.96 Gy (n = 5) for 1 Gy planned, some centres contributed to both technique) with greater reproducibility (Group I: 9.6%, Group II: 5.1 % of the mean dose). We conclude that a mono-isocentric treatment technique has the potential to deliver a more accurate and reproducible dose distribution at the field junction of photon beams in head and neck treatment. Copyright (2003) Blackwell Science Pty Ltd

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Science.gov (United States)

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

Science.gov (United States)

Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

1982-04-01

Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

Muon track induced current measurements in semi-insulating GaAs

Energy Technology Data Exchange (ETDEWEB)

Eshchenko, D.G., E-mail: dimitry.eshchenko@psi.c [Physik-Institut der Universitaet Zuerich, CH-8057 Zuerich (Switzerland); Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen (Switzerland); Storchak, V.G. [Russian Research Centre ' Kurchatov Institute' , Kurchatov Sq. 1, Moscow 123182 (Russian Federation); Cottrell, S.P. [ISIS Facility, Rutherford Appleton Laboratory, Oxfordshire OX11 OQX (United Kingdom)

2009-04-15

We report on preliminary muon-track-induced current measurements in semi-insulating (SI-) GaAs. At T=70K, after simultaneous treatment of the sample by muon irradiation and a strong electric field (a square wave with |E|>10kV/cm and the polarity changed every 1/(50) s) for approximately 2 h, the sample is transferred to a metastable-like state which is characterized by increased life-times for non-equilibrium electrons and holes. The sample can be returned to the original state by heating up to 250 K. Our results for SI-GaAs suggest a muon-track-induced electric-field-assisted neutralization process for the deep traps.

Microwave GaAs Integrated Circuits On Quartz Substrates

Science.gov (United States)

Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

1994-01-01

Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

Junction depth dependence of breakdown in silicon detector diodes

International Nuclear Information System (INIS)

Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

1996-01-01

The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

Final states in Si and GaAs via RF μSR spectroscopy

International Nuclear Information System (INIS)

Kreitzman, S.R.; Pfiz, T.; Riseman, T.M.; Brewer, J.H.; Williams, D.L.; Sun-Mack, S.; Estle, T.L.

1991-01-01

The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu * states at any temperature. However, our results on the diamagnetic final state (μ f + ) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu * and Mu. We observe a full μ f + fraction at 317 K when the Mu relaxation rate is above 10 μs -1 . GaAs differs from the situation in Si in that we observed only a partial conversion of Mu * and Mu to a μ + final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively. (orig.)

Final states in Si and GaAs via RF μSR spectroscopy

Science.gov (United States)

Kreitzman, S. R.; Pfiz, T.; Sun-Mack, S.; Riseman, T. M.; Brewer, J. H.; Williams, D. Ll.; Estle, T. L.

1991-02-01

The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu* states at any temperature. However, our results on the diamagnetic final state (μ{f/+}) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu* and Mu. We observe a full μ{f/+} fraction at 317 K when the Mu relaxation rate is above 10 μs-1. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu* and Mu to a μ+ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively.

High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+-n silicon junction

International Nuclear Information System (INIS)

Smaali, K.; Faure, J.; El Hdiy, A.; Troyon, M.

2008-01-01

High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p + -n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p-n junctions with a resolution of about 20 nm

A comprehensive study of cryogenic cooled millimeter-wave frequency multipliers based on GaAs Schottky-barrier varactors

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Rybalko, Oleksandr; Zhurbenko, Vitaliy

2018-01-01

The benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use...... with a commercial RF and microwave CAD tool. The model implements critical physical phenomena such as thermionic-field emission current transport at cryogenic temperatures, temperature dependent mobility, reverse breakdown, self-heating, and high-field velocity saturation effects. A parallel conduction model...... is employed in order to include the effect of barrier inhomogeneities which is known to cause deviation from the expected I--V characteristics at cryogenic temperatures. The developed model is shown to accurately fit the I--V --T dataset from 25 to 295 K measured on the varactor diode stack. Harmonic balance...

Effects of surface states on device and interconnect isolation in GaAs MESFET and InP MISFET integrated circuits

International Nuclear Information System (INIS)

Hasegawa, H.; Kitagawa, T.; Masuda, H.; Yano, H.; Ohno, H.

1985-01-01

Surface electrical breakdown and side-gating which cause failure of device and interconnect isolation are investigated for GaAs MESFET and InP MISFET integrated circuit structures. Striking differences in behavior are observed between GaAs and InP as regards to the surface conduction, surface breakdown and side-gating. These differences are shown to be related to the surface state properties of the insulator-semiconductor interface. In GaAs, high density of surface states rather than bulk trap states control the surface I-V characteristics and side-gating, causing serious premature avalanche breakdown and triggering side-gating at a low nominal field intensity of 1-3 kV/cm. On the other hand, InP MISFET integrated circuits are virtually free from these premature breakdown and side-gating effect under normal dark operating condition because of very low surface state density

Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

Science.gov (United States)

Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

2004-09-01

In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

Si3N4/Si/In0.05Ga0.95As/n endash GaAs metal endash insulator endash semiconductor devices

International Nuclear Information System (INIS)

Park, D.; Li, D.; Tao, M.; Fan, Z.; Botchkarev, A.E.; Mohammad, S.N.; Morkoc, H.

1997-01-01

We report a novel metal endash insulator endash semiconductor (MIS) structure exhibiting a pseudomorphic In 0.05 Ga 0.95 As layer on GaAs with interface state densities in the low 10 11 eV -1 cm -2 . The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition methods. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 30 mV under a field swing of about ±1.3 MV/cm. The 150-Angstrom-thick In 0.05 Ga 0.95 As channel between Si and GaAs is found to bring about a change in the minority carrier recombination behavior of the GaAs channel, in the same way as done by In 0.53 Ga 0.47 As channel MIS structures. Self-aligned gate depletion mode In 0.05 Ga 0.95 As metal endash insulator endash semiconductor field-effect transistors having 3 μm gate lengths exhibited field-effect bulk mobility of 1400 cm 2 /Vs and transconductances of about 170 mS/mm. copyright 1997 American Institute of Physics

Photon counting microstrip X-ray detectors with GaAs sensors

Science.gov (United States)

Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

2018-01-01

High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

Science.gov (United States)

Kizilyalli, I. C.; Aktas, O.

2015-12-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

Ballistic Josephson junctions based on CVD graphene

Science.gov (United States)

Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

2018-04-01

Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

Linearity of photoconductive GaAs detectors to pulsed electrons

International Nuclear Information System (INIS)

Ziegler, L.H.

1995-01-01

The response of neutron damaged GaAs photoconductor detectors to intense, fast (50 psec fwhm) pulses of 16 MeV electrons has been measured. Detectors made from neutron damaged GaAs are known to have reduced gain, but significantly improved bandwidth. An empirical relationship between the observed signal and the incident electron fluence has been determined

Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Yan, Xin; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

2015-02-07

Hybrid nanostructures combining nanowires with quantum dots promote the development of nanoelectronic and nanophotonic devices with integrated functionalities. In this work, we present a complex nanostructure with multishell quantum dots grown on nanowires. 1–4 shells of Stranski-Krastanov InAs quantum dots are grown on the sidewalls of GaAs nanowires by metal organic chemical vapor deposition. Different dot shells are separated by 8 nm GaAs spacer shells. With increasing the number of shells, the quantum dots become sparser and tend to align in one array, which is caused by the shrinkage of facets on which dots prefer to grow as well as the strain fields produced by the lower set of dots which influences the migration of In adatoms. The size of quantum dots increases with the increase of shell number due to enhanced strain fields coupling. The spectra of multishell dots exhibit multiwavelength emission, and each peak corresponds to a dot shell. This hybrid structure may serve as a promising element in nanowire intermediate band solar cells, infrared nanolasers, and photodetectors.

Performance of a GaAs electron source

International Nuclear Information System (INIS)

Calabrese, R.; Ciullo, G.; Della Mea, G.; Egeni, G.P.; Guidi, V.; Lamanna, G.; Lenisa, P.; Maciga, B.; Rigato, V.; Rudello, V.; Tecchio, L.; Yang, B.; Zandolin, S.

1994-01-01

We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and constant current extraction (1 mA for more than four weeks) are achieved after a little initial decay. These parameters meet the requirements for application of the GaAs photocathode as a source for electron cooling devices. We also present the preliminary results of a surface analysis experiment, carried out by means of the RBS technique to check the hypothesis of cesium evaporation from the surface when the photocathode is in operation. (orig.)

Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F. [University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573 (Japan)

2004-09-01

In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerance of GaAs and that Ti can protected GaAs from erosion by NH{sub 3}. By depositing Ti on GaAs(111)A surface, a mirror-like GaN layer could be grown at 1000 C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

Science.gov (United States)

Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

2015-08-01

Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

Superconductive junctions for x-ray spectroscopy

International Nuclear Information System (INIS)

Grand, J.B. le; Bruijn, M.P.; Frericks, M.; Korte, P.A.J. de; Houwman, E.P.; Flokstra, J.

1992-01-01

Biasing of SIS-junctions for the purpose of high energy resolution x-ray detection is complicated by the presence of a DC Josephson current and AC Josephson current resonances, so that a large magnetic field is normally used for the suppression of these Josephson features. A transimpedance amplifier is proposed for biasing and signal amplification at low magnetic field. X-ray spectroscopy detectors for astronomy require a high detection efficiency in the 0.5-10 keV energy band and a reasonable (∼1 cm 2 ) detector area. Calculations on absorber-junctions combinations which might meet these requirements are presented. (author) 9 refs.; 10 figs

Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

Science.gov (United States)

1995-10-05

improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

The GaAs electron source: simulations and experiments

International Nuclear Information System (INIS)

Aleksandrov, A.V.; Ciullo, G.; Guidi, V.; Kudelainen, V.I.; Lamanna, G.; Lenisa, P.; Logachov, P.V.; Maciga, B.; Novokhatsky, A.; Tecchio, L.; Yang, B.

1994-01-01

In this paper we calculate electron emission from GaAs photocathodes using the Monte Carlo technique. Typical data of energy spread of the electron beam are presented. For photoenergy ranging from 1.6 to 2.1 eV, the calculated longitudinal and transverse energy spreads are 14.4-78 and 4-14.7 meV respectively. Temporal measurement of GaAs photocathodes has been performed. The preliminary results show that the temporal response is faster than 200 ps. (orig.)

Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

International Nuclear Information System (INIS)

Huang, H. B.; Hu, J. M.; Yang, T. N.; Chen, L. Q.; Ma, X. Q.

2014-01-01

Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

Microwave oscillator using arrays of long Josephson junctions

International Nuclear Information System (INIS)

Pagano, S.; Monaco, R.; Costabile, G.

1989-01-01

The authors report on measurements performed on integrated superconducting devices based on arrays of long Josephson tunnel junctions operating in the resonant fluxon oscillation regime (i.e. biased on the Zero Field Steps). The electromagnetic coupling among the junction causes a mutual phase-locking of the fluxon oscillations with a corresponding increase of the emitted power and a decrease of the signal linewidth. This phase-locked state can be controlled by means of an external dc bias current and magnetic field. The effect of the generated microwave signal has been observed on a small Josephson tunnel junction coupled to the array via a microstrip transmission line. The feasibility of the reported devices as local oscillators in an integrated microwave Josephson receiver is discussed

Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100 Surfaces

Directory of Open Access Journals (Sweden)

Zhou Lin

2008-01-01

Full Text Available Abstract Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100 substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

Dynamics of fractional vortices in long Josephson junctions

International Nuclear Information System (INIS)

Gaber, Tobias

2007-01-01

In this thesis static and dynamic properties of fractional vortices in long Josephson junctions are investigated. Fractional vortices are circulating supercurrents similar to the well-known Josephson fluxons. Yet, they show the distinguishing property of carrying only a fraction of the magnetic flux quantum. Fractional vortices are interesting non-linear objects. They spontaneously appear and are pinned at the phase discontinuity points of so called 0-κ junctions but can be bend or flipped by external forces like bias currents or magnetic fields. 0-κ junctions and fractional vortices are generalizations of the well-known 0-π junctions and semifluxons, where not only phase jumps of pi but arbitrary values denoted by kappa are considered. By using so-called artificial 0-κ junctions that are based on standard Nb-AlO x -Nb technology the classical dynamics of fractional vortices has been investigated experimentally for the very first time. Here, half-integer zero field steps could be observed. These voltage steps on the junction's current-voltage characteristics correspond to the periodic flipping/hopping of fractional vortices. In addition, the oscillatory eigenmodes of fractional vortices were investigated. In contrast to fluxons fractional vortices have an oscillatory eigenmode with a frequency within the plasma gap. Using resonance spectroscopy the dependence of the eigenmode frequency on the flux carried by the vortex and an applied bias current was determined. (orig.)

Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Energy Technology Data Exchange (ETDEWEB)

Sellers, D. G.; Chen, E. Y.; Doty, M. F. [Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States); Polly, S. J.; Hubbard, S. M. [NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623 (United States)

2016-05-21

We investigate the effect of doping on the mechanisms of carrier escape from intermediate states in delta-doped InAs/GaAs intermediate band solar cells. The intermediate states arise from InAs quantum dots embedded in a GaAs p-i-n junction cell. We find that doping the sample increases the number of excited-state carriers participating in a cycle of trapping and carrier escape via thermal, optical, and tunneling mechanisms. However, we find that the efficiency of the optically-driven carrier escape mechanism is independent of doping and remains small.

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Science.gov (United States)

Jameel, D. A.; Aziz, M.; Felix, J. F.; Al Saqri, N.; Taylor, D.; Albalawi, H.; Alghamdi, H.; Al Mashary, F.; Henini, M.

2016-11-01

This article reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I-V measurements at different temperatures (20-420 K). The I-V results indicate that the value of the rectification ratio (IF/IR) at 0.5 V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. The high value of mean barrier Φbarb of SPAN/(311)B (calculated from the plots of Φb 0 as a function of 1/2kT) confirms that the GaAs substrate orientation results in an increase of barrier homogeneities. Furthermore, the C-V characteristics were obtained at room temperature. The C-V measurements showed that the carrier distributions at the interface and away from the interface in high index (311) GaAs orientations are more uniform and have better barrier homogeneity than those grown on the conventional (100) GaAs substrates.

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

Energy Technology Data Exchange (ETDEWEB)

Boardman, D

2002-01-01

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

International Nuclear Information System (INIS)

Boardman, D.

2002-01-01

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

Electromagnetic waves in single- and multi-Josephson junctions

International Nuclear Information System (INIS)

Matsumoto, Hideki; Koyama, Tomio; Machida, Masahiko

2008-01-01

The terahertz wave emission from the intrinsic Josephson junctions is one of recent topics in high T c superconductors. We investigate, by numerical simulation, properties of the electromagnetic waves excited by a constant bias current in the single- and multi-Josephson junctions. Nonlinear equations of phase-differences are solved numerically by treating the effects of the outside electromagnetic fields as dynamical boundary conditions. It is shown that the emitted power of the electromagnetic wave can become large near certain retrapping points of the I-V characteristics. An instability of the inside phase oscillation is related to large amplitude of the oscillatory waves. In the single- (or homogeneous mutli-) Josephson junctions, electromagnetic oscillations can occur either in a form of standing waves (shorter junctions) or by formation of vortex-antivortex pairs (longer junctions). How these two effects affects the behavior of electromagnetic waves in the intrinsic Josephson junctions is discussed

Effect of GaAs interlayer thickness variations on the optical properties of multiple InAs QD structure

International Nuclear Information System (INIS)

Park, C.Y.; Park, K.W.; Kim, J.M.; Lee, Y.T.

2009-01-01

Multiple InAs/GaAs self-assembled quantum dots (QDs) with vertically stacked structure are grown by molecular beam epitaxy and the effects of GaAs interlayer thickness variation on optical properties are studied. The growth conditions are optimized by in-situ RHEED, AFM, and PL measurement. The five InAs QD layers are embedded in GaAs and Al0.3Ga0.7As layer. The PL intensity is increased with increasing GaAs interlayer thickness. The thin GaAs interlayer has strain field, the strain-induced intermixing of indium atoms in the InAs QDs (blue-shift) can overcompensate for the effect on the increased QD size (red-shift) (H. Heidemeyer et al. Appl. Phys. Lett. 80, 1544 (2002); T. Nakaoka et al. J. Appl. Phys. Lett. 96, 150 (2004)[1, 2], respectively). For the interlayer thickness larger than about 7 nm, the blue-shifts are correlated to the dominant high-energy excited state transitions due to the successive state filling of the ground and higher excited states in the QDs. The energy separation of double PL peaks, originated from two different excited states, was kept at around 50 meV at room temperature. A possible mechanism concerning this phenomenon is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Eesti Gaas. Inspection of Kohtal-Jaerve - Tallinn pipeline. Final report

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-11-01

The project `Inspection of Pipelines in Estonia` was funded by Danish government and was carried out in collaboration between DONG, Balslev and FORCE. By agreement between Eesti Gaas and DONG, the pipeline system between Kohtla-Jaerve and Tallinn was selected for inspection. This pipeline system has a total length of 176.9 km. The objective of the project has been, based on detailed inspection of relative short lengths of pipe, to determine the integrity of the pipeline and to give advice concerning the continued use as a high pressure transmission pipeline. The objectives have been met as set out by the project Proposal with the investigation and this report as follows: Based on a document review together with the measurements and observations in the field and in the laboratory, the condition of approximately 5 km of the pipeline has been evaluated; Recommendations are given in this report with the aim of extending the life of the pipeline. A further objective has been to provide know-how transfer in order to permit Eesti Gaas to run similar inspections on other parts of their transmission system. (EG)

Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

International Nuclear Information System (INIS)

Kizilyalli, I C; Aktas, O

2015-01-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p–n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (10 4 to 10 6 cm −2 ) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 10 15 cm −3 . This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A  ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p–n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p–n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p–n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p–n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T −3/2 , consistent with a phonon scattering model. Also

Holographic s-wave and p-wave Josephson junction with backreaction

Energy Technology Data Exchange (ETDEWEB)

Wang, Yong-Qiang; Liu, Shuai [Institute of Theoretical Physics, Lanzhou University,Lanzhou 730000, People’s Republic of (China)

2016-11-22

In this paper, we study the holographic models of s-wave and p-wave Josephoson junction away from probe limit in (3+1)-dimensional spacetime, respectively. With the backreaction of the matter, we obtained the anisotropic black hole solution with the condensation of matter fields. We observe that the critical temperature of Josephoson junction decreases with increasing backreaction. In addition to this, the tunneling current and condenstion of Josephoson junction become smaller as backreaction grows larger, but the relationship between current and phase difference still holds for sine function. Moreover, condenstion of Josephoson junction deceases with increasing width of junction exponentially.

GaAs strip detectors: the Australian production program

International Nuclear Information System (INIS)

Butcher, K.S.A.; Alexiev, D.

1995-01-01

The Australian High Energy Physics consortium (composed of the University of Melbourne, the University of Sydney and ANSTO) has been investigating the possibility of producing a large area wheel of SI GaAs detectors for the ATLAS detector array. To help assess the extent of Australia's role in this venture a few SI GaAs microstrip detectors are to be manufactured under contract by the CSIRO division of Radiophysics GaAs IC Prototyping Facility. The planned production of the devices is discussed. First, the reasons for producing the detectors here in Australia are examined, then some basic characteristics of the material are considered, and finally details are provided of the design used for the manufacture of the devices. Two sets of detectors will be produced using the standard Glasgow production recipe; SIGaAs and GaN. The Glasgow mask set is being used as a benchmark against which to compare the Australian devices

Donor level of interstitial hydrogen in GaAs

International Nuclear Information System (INIS)

Dobaczewski, L.; Bonde Nielsen, K.; Nylandsted Larsen, A.; Peaker, A.R.

2006-01-01

The first data evidencing the existence of the donor level of the interstitial hydrogen in GaAs are presented. The abundant formation of the (0/+) donor level after in situ low-temperature implantation of hydrogen into the depletion layer of GaAs Schottky diodes has been observed and the activation energy and annealing properties have been determined by Laplace DLTS. The activation energy for electron emission of this donor state is 0.14eV. Above 100K the hydrogen deep donor state is unstable, converting to a more stable form when there are electrons available for the capture process. A slightly perturbed form of the hydrogen donor in its neutral charge state can be recovered by illuminating the sample. This process releases twice as many electrons as the ionisation process of the hydrogen donor state itself. This fact, by analogy with the silicon case, evidences the negative-U behaviour of hydrogen in GaAs

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

Energy Technology Data Exchange (ETDEWEB)

Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

Electron transport in nanometer GaAs structure under radiation exposure

CERN Document Server

Demarina, N V

2002-01-01

One investigates into effect of neutron and proton irradiation on electron transport in nanometer GaAs structures. Mathematical model takes account of radiation defects via introduction of additional mechanisms od scattering of carriers at point defects and disordered regions. To investigate experimentally into volt-ampere and volt-farad characteristics one used a structure based on a field-effect transistor with the Schottky gate and a built-in channel. Calculation results of electron mobility, drift rate of electrons, time of energy relaxation and electron pulse are compared with the experimental data

Influence of magnetic and ultrasonic fields on coefficient of reflectivity of GaAs, GaSb and InAs crystals

International Nuclear Information System (INIS)

Zaveryukhin, B.N.; Zaveryukhina, N.N.; Zaveryukhina, E.V.; Volodarskiy, V.V.

2007-01-01

Full text: Previously we demonstrated for the first time in the world that ultrasonic waves of the megahertz range can change the transport properties and a structure of semiconductors. In this work we have experimentally studied the influence of ultrasonic treatment on the spectral coefficients of reflection R in the magnetic fields of the samples of GaAs-, GaSb- and InAs-crystals. The reflectance spectra in the magnetic field of the samples before and after the ultrasonic treatment (UST) for a certain time were measured in a broad wavelength range including ultraviolet, visible, and infrared spectral regions. The semi-insulating GaAs-crystals had a thickness d=100 μm and a working area S of up to 3sm 2 . The p-GaSb- crystals had an area of S=0.25sm 2 and d =250 μm. The base p-GaSb-layers possessed the concentration N=2·10 17 sm 3 and n-GaSb-layers with a thickness of 0.5 m were created by diffusion doping with phosphorus. Besides, the experiments were performed also for of the n-InAs-crystals. The samples of the InAs-n crystals had a thickness of 100 μm an area S = 0.25 sm 2 . Some remains of sulfuric (S) were discovered in InAs-samples. As could was see from the experiments, all the initial IR spectra measured for the samples with various dopant concentrations NP exhibit maximums (peaks) for 0.2 μm and minimum (holes) for. The reflectance spectra measured after UST for time of t > l hour clearly reveal a shift of the R minima toward longer wavelengths and a general decrease in the reflectance of each sample. The shift of the R is unambiguous evidence of the acoustically stimulated diffusion of impurity (phosphorus) inward of the samples. Discovered peaks and holes slitted and changed their sizes in the magnetic fields. It should be emphasized that behavior of the R spectra of the GaAs-, In As- and GaSb- samples is determined by the same mechanisms. Changes of the R spectra after the UST are explained by acoustically stimulated diffusion of the dopant inward

GaAs laser therapy reestablishes the morphology of the NMJ and nAChRs after injury due to bupivacaine.

Science.gov (United States)

Pissulin, Cristiane Neves Alessi; de Souza Castro, Paula Aiello Tomé; Codina, Flávio; Pinto, Carina Guidi; Vechetti-Junior, Ivan Jose; Matheus, Selma Maria Michelin

2017-02-01

Local anesthetics are used to relieve pre- and postoperative pain, acting on both sodium channels and nicotinic acetylcholine receptors (nAChR) at the neuromuscular junction (NMJ). Bupivacaine acts as a non-competitive antagonist and has limitations, such as myotoxicity, neurotoxicity, and inflammation. Low-level laser therapy (LLLT) has anti-inflammatory, regenerative, and analgesic effects. The aim of the present study was to evaluate the effects of a gallium arsenide laser (GaAs) on the morphology of the NMJ and nAChRs after application of bupivacaine in the sternomastoid muscle. Thirty-two adult male Wistar rats received injections of bupivacaine 0.5% (Bupi: right antimere) and 0.9% sodium chloride (Cl: left antimere). Next, the animals were divided into a Control group (C) and a Laser group (LLLT). The laser group received LLLT (GaAs 904nm, 50mW, 4,8J) in both antimeres for five consecutive days. After seven days, the animals were euthanized and the surface portion of the sternomastoid muscle was removed, frozen, and subjected to morphological and morphometric analyses of the NMJs (nonspecific esterase reaction), confocal laser scanning, and an ultrastructural analysis. The nAChRs were quantified by Western blotting. In the chloride group, the morphology and morphometry of the NMJs remained stable. The maximum diameters of the NMJs were lower in the Bupi (15.048±1.985) and LLLT/Bupi subgroups (15.456±1.983) compared to the Cl (18.502±2.058) and LLLT/Cl subgroups (19.356±2.522) (pbupivacaine, with recovery in the junctional folds and active zone. There was an increase in the perimeter of the LLLT/Bupi subgroup (150.33) compared to the Bupi subgroup (74.69) (pbupivacaine, providing important data supporting the use of LLLT in therapeutic protocols for injuries triggered by local anesthetics. Copyright © 2016 Elsevier B.V. All rights reserved.

Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates

NARCIS (Netherlands)

Gong, Q.; Nötzel, R.; Schönherr, H.-P.; Ploog, K.H.

2002-01-01

We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(311)A and GaAs(100). On GaAs(311)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along [011] is composed of monolayer high

Josephson junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Wild, Georg Hermann

2012-01-01

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Josephson junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Wild, Georg Hermann

2012-03-04

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.

Science.gov (United States)

Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

2016-02-10

Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.

Towards quantum dots on GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Moesl, Johannes; Ludwig, Stefan [Fakultaet fuer Physik, Center for NanoScience, LMU Munich, Geschwister-Scholl- Platz 1, D-80539 Muenchen (Germany); Fontcuberta i Morral, Anna [TU Munich, Walter Schottky Institut, Am Coulombwall 3, 85748 Garching (Germany); EPF, Lausanne (Switzerland)

2009-07-01

Semiconductor nanowires is an emergent research topic in the field of nanoelectronics, as they form an excellent building block for 0D and 1D applications and allow novel architectures and material combinations. We study electronic transport properties of catalyst-free MBE grown GaAs nanowires, p-doped at a number of different doping levels. Detailed characterization of the wires including electronic contacts fabricated by e-beam lithography and based on palladium or annealed zinc-silver alloys are discussed. Contact properties and a pronounced hysteresis of the current through the nanowires, as a backgate-voltage is swept, are explained within tentative models. In addition we present first transport measurements on quantum dots, which are defined electrostatically as well as by etched constrictions.

Spatial modulation of the Fermi level by coherent illumination of undoped GaAs

Science.gov (United States)

Nolte, D. D.; Olson, D. H.; Glass, A. M.

1989-11-01

The Fermi level in undoped GaAs has been modulated spatially by optically quenching EL2 defects. The spatial gradient of the Fermi level produces internal electric fields that are much larger than fields generated by thermal diffusion alone. The resulting band structure is equivalent to a periodic modulation-doped p-i-p structure of alternating insulating and p-type layers. The internal fields are detected via the electro-optic effect by the diffraction of a probe laser in a four-wave mixing geometry. The direct control of the Fermi level distinguishes this phenomenon from normal photorefractive behavior and introduces a novel nonlinear optical process.

Electronic structure of GaAs with InAs (001) monolayer

International Nuclear Information System (INIS)

Tit, N.; Peressi, M.

1995-04-01

The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

Electron-spin dynamics in Mn-doped GaAs using time-resolved magneto-optical techniques

Science.gov (United States)

Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Zhukov, E. A.; Yakovlev, D. R.; Bayer, M.

2009-08-01

We study the electron-spin dynamics in p -type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin-relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin-relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.

‘Gap Junctions and Cancer: Communicating for 50 Years’

Science.gov (United States)

Aasen, Trond; Mesnil, Marc; Naus, Christian C.; Lampe, Paul D.; Laird, Dale W.

2017-01-01

Fifty years ago, tumour cells were found to lack electrical coupling, leading to the hypothesis that loss of direct intercellular communication is commonly associated with cancer onset and progression. Subsequent studies linked this phenomenon to gap junctions composed of connexin proteins. While many studies support the notion that connexins are tumour suppressors, recent evidence suggests that, in some tumour types, they may facilitate specific stages of tumour progression through both junctional and non-junctional signalling pathways. This Timeline article highlights the milestones connecting gap junctions to cancer, and underscores important unanswered questions, controversies and therapeutic opportunities in the field. PMID:27782134

Paths to light trapping in thin film GaAs solar cells.

Science.gov (United States)

Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

2018-03-19

It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

Manipulating Josephson junctions in thin-films by nearby vortices

International Nuclear Information System (INIS)

Kogan, V.G.; Mints, R.G.

2014-01-01

Highlights: • Vortex located in a bank of a planar Josephson junction changes its character. • Vortex located at some discreet positions in thin strip bank suppresses to zero the zero-field current. • The number of these positions is equal to the number of vortices trapped. • Critical current-field patterns are strongly affected by the vortex position. - Abstract: It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I c (H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I c (H) has zero at H=0 instead of the traditional maximum of ‘0-type’ junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction–vortex separation exceeds ∼W, the strip width, I c (H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges

High microwave performance ion-implanted GaAs MESFETs on InP substrates

International Nuclear Information System (INIS)

Wada, M.; Kato, K.

1990-01-01

Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Tchernycheva, M; Harmand, J C; Patriarche, G; Travers, L; Cirlin, G E

2006-01-01

Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 deg. C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 deg. C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires

Molecular electronics: some views on transport junctions and beyond.

Science.gov (United States)

Joachim, Christian; Ratner, Mark A

2005-06-21

The field of molecular electronics comprises a fundamental set of issues concerning the electronic response of molecules as parts of a mesoscopic structure and a technology-facing area of science. We will overview some important aspects of these subfields. The most advanced ideas in the field involve the use of molecules as individual logic or memory units and are broadly based on using the quantum state space of the molecule. Current work in molecular electronics usually addresses molecular junction transport, where the molecule acts as a barrier for incoming electrons: This is the fundamental Landauer idea of "conduction as scattering" generalized to molecular junction structures. Another point of view in terms of superexchange as a guiding mechanism for coherent electron transfer through the molecular bridge is discussed. Molecules generally exhibit relatively strong vibronic coupling. The last section of this overview focuses on vibronic effects, including inelastic electron tunneling spectroscopy, hysteresis in junction charge transport, and negative differential resistance in molecular transport junctions.

Internal resonances in periodically modulated long Josephson junctions

DEFF Research Database (Denmark)

Larsen, Britt Hvolbæk; Mygind, Jesper; Ustinov, Alexey V.

1995-01-01

Current-voltage (I-V) characteristics of long Josephson junctions with a periodic lattice of localized inhomogeneities are studied. The interaction between the moving fluxons and the inhomogeneities causes resonant steps in the IV-curve. Some of these steps are due to a synchronization to resonant...... Fiske modes in the sub-junctions formed between the inhomogeneities. The voltage positions of the resonant steps oscillate as function of the applied magnetic field with a period corresponding to the inclusion of one magnetic flux quantum, Φ0=h/2e, per sub-junction. A qualitative explanation that takes...

A charge-based model of Junction Barrier Schottky rectifiers

Science.gov (United States)

Latorre-Rey, Alvaro D.; Mudholkar, Mihir; Quddus, Mohammed T.; Salih, Ali

2018-06-01

A new charge-based model of the electric field distribution for Junction Barrier Schottky (JBS) diodes is presented, based on the description of the charge-sharing effect between the vertical Schottky junction and the lateral pn-junctions that constitute the active cell of the device. In our model, the inherently 2-D problem is transformed into a simple but accurate 1-D problem which has a closed analytical solution that captures the reshaping and reduction of the electric field profile responsible for the improved electrical performance of these devices, while preserving physically meaningful expressions that depend on relevant device parameters. The validation of the model is performed by comparing calculated electric field profiles with drift-diffusion simulations of a JBS device showing good agreement. Even though other fully 2-D models already available provide higher accuracy, they lack physical insight making the proposed model an useful tool for device design.

Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

Science.gov (United States)

Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo

2014-12-01

We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.

Investigations on liquid phase electroepitaxial growth kinetics of GaAs

International Nuclear Information System (INIS)

Mouleeswaran, D.; Dhanasekaran, R.

2004-01-01

This paper presents a model based on solving a two-dimensional diffusion equation incorporating the electromigration effect by numerical simulation method corresponding to liquid phase electroepitaxial (LPEE) growth of GaAs, whose growth is limited by diffusion and electro migration of solute species. Using the numerical simulation method, the concentration profiles of As in Ga rich solution during the electroepitaxial growth of GaAs have been constructed in front of the growing crystal interface. Using the concentration gradient at the interface, the growth rate and thickness of the epitaxial layer of GaAs have been determined for different experimental growth conditions. The proposed model is based on the assumption that there is no convection in the solution. The results are discussed in detail

Anisotropic magnetoresistance and piezoelectric effect in GaAs Hall samples

Science.gov (United States)

Ciftja, Orion

2017-02-01

Application of a strong magnetic field perpendicular to a two-dimensional electron system leads to a variety of quantum phases ranging from incompressible quantum Hall liquid to Wigner solid, charge density wave, and exotic non-Abelian states. A few quantum phases seen in past experiments on GaAs Hall samples of electrons show pronounced anisotropic magnetoresistance values at certain weak magnetic fields. We argue that this might be due to the piezoelectric effect that is inherent in a semiconductor host such as GaAs. Such an effect has the potential to create a sufficient in-plane internal strain that will be felt by electrons and will determine the direction of high and low resistance. When Wigner solid, charge density wave, and isotropic liquid phases are very close in energy, the overall stability of the system is very sensitive to local order and, thus, can be strongly influenced even by a weak perturbation such as the piezoelectric-induced effective electron-electron interaction, which is anisotropic. In this work, we argue that an anisotropic interaction potential may stabilize anisotropic liquid phases of electrons even in a strong magnetic field regime where normally one expects to see only isotropic quantum Hall or isotropic Fermi liquid states. We use this approach to support a theoretical framework that envisions the possibility of an anisotropic liquid crystalline state of electrons in the lowest Landau level. In particular, we argue that an anisotropic liquid state of electrons may stabilize in the lowest Landau level close to the liquid-solid transition region at filling factor ν =1 /6 for a given anisotropic Coulomb interaction potential. Quantum Monte Carlo simulations for a liquid crystalline state with broken rotational symmetry indicate stability of liquid crystalline order consistent with the existence of an anisotropic liquid state of electrons stabilized by anisotropy at filling factor ν =1 /6 of the lowest Landau level.

Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs(001)

Energy Technology Data Exchange (ETDEWEB)

Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Balderas-Navarro, R.E. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Facultad de Ciencias, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico)

2008-07-01

Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E{sub 1} optical transition as a probe. We follow the kinetics of the deposition of GaAs and In{sub 0.3}Ga{sub 0.7}As on GaAs(001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As{sub 4} or As{sub 2} flux pressure of 5 x 10{sup -6} Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs(001)

International Nuclear Information System (INIS)

Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F.; Balderas-Navarro, R.E.

2008-01-01

Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E 1 optical transition as a probe. We follow the kinetics of the deposition of GaAs and In 0.3 Ga 0.7 As on GaAs(001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As 4 or As 2 flux pressure of 5 x 10 -6 Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of surface passivation on twin-free GaAs nanosheets.

Science.gov (United States)

Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

2015-02-24

Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

Coaxial nuclear radiation detector with deep junction and radial field gradient

International Nuclear Information System (INIS)

Hall, R.N.

1979-01-01

Germanium radiation detectors are manufactured by diffusion lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430 0 and is monitored by a quartz half cell containing a standard composition of this alloy. Detectors having n-type cores may be constructed by converting high purity p-type germanium to n-type by a lithium diffusion and subsequently diffusing some of the lithium back out through the surface to create a deep p-n junction. Coaxial germanium detectors comprising deep p-n junctions are produced by the lithium diffusion process

CMOS compatible route for GaAs based large scale flexible and transparent electronics

KAUST Repository

Nour, Maha A.; Ghoneim, Mohamed T.; Droopad, Ravi; Hussain, Muhammad Mustafa

2014-01-01

Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

CMOS compatible route for GaAs based large scale flexible and transparent electronics

KAUST Repository

Nour, Maha A.

2014-08-01

Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

GaAs nanocrystals: Structure and vibrational properties

International Nuclear Information System (INIS)

Nayak, J.; Sahu, S.N.; Nozaki, S.

2006-01-01

GaAs nanocrystals were grown on indium tin oxide substrate by an electrodeposition technique. Atomic force microscopic measurement indicates an increase in the size of the nanocrystal with decrease in the electrolysis current density accompanied by the change in the shape of the crystallite. Transmission electron microscopic measurements identify the crystallite sizes to be in the range of 10-15 nm and the crystal structure to be orthorhombic. On account of the quantum size effect, the first optical transition was blue shifted with respect to the band gap of the bulk GaAs and the excitonic peak appeared prominent. A localized phonon mode ascribed to certain point defect occurred in the room temperature micro-Raman spectrum

Pump-probe studies of travelling coherent longitudinal acoustic phonon oscillations in GaAs

Energy Technology Data Exchange (ETDEWEB)

Xu, Y.; Qi, J.; Tolk, Norman [Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235 (United States); Miller, J. [Naval air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Cho, Y.J.; Liu, X.; Furdyna, J.K. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Shahbazyan, T.V. [Department of Physics, Jackson State University, MS 39217 (United States)

2008-07-01

We report comprehensive studies of long-lived oscillations in femtosecond optical pump-probe measurements on GaAs based systems. The oscillations arise from a photo-generated coherent longitudinal acoustic phonon wave at the sample surface, which subsequently travels from the surface into the GaAs substrate, thus providing information on the optical properties of the material as a function of time/depth. Wavelength-dependent studies of the oscillations near the bandgap of GaAs indicate strong correlations to the optical properties of GaAs. We also use the coherent longitudinal acoustic phonon waves to probe a thin buried Ga{sub 0.1}In{sub 0.9}As layers non-invasively. The observed phonon oscillations experience a reduction in amplitude and a phase change at wavelengths near the bandgap of the GaAs, when it passes through the thin Ga{sub x}In{sub 1-x}As layer. The layer depth and thicknesses can be extracted from the oscillation responses. A model has been developed that satisfactorily characterizes the experimental results. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

GaAs optoelectronic neuron arrays

Science.gov (United States)

Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

1993-01-01

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Science.gov (United States)

Peaker, A. R.; Markevich, V. P.; Coutinho, J.

2018-04-01

The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

Numerical versus analytical Ic(H) patterns in Josephson junctions with periodically alternating critical current density

International Nuclear Information System (INIS)

Lazarides, N

2004-01-01

An analytical expression for the magnetic-field-dependent critical current I c (H) of Josephson junctions with periodically alternating critical current density J c (x) is derived within the uniform field approximation. Comparison with numerically calculated I c (H) patterns for junctions with identical, thick, periodically arranged defects with the corresponding analytical expression reveals fair agreement for a wide range of parameters, due to increased characteristic length. Based on qualitative arguments, we give the dependence of the new characteristic length on the geometrical parameters of the junction, which is in agreement with self-consistent calculations with the static sine-Gordon equation. The analytical expression captures the observed qualitative features of the I c (H) patterns, while it is practically exact for short junctions or high fields. It also produces the shift of the major peak from the zero-field position of the standard Fraunhofer pattern to another position related to the periodicity of the critical current density in φ-junctions

Static and dynamical valence-charge-density properties of GaAs

International Nuclear Information System (INIS)

Pietsch, U.

1993-01-01

Owing to the close neighbourhood of Ga and As in Mendeleev's table, GaAs shows two fundamental classes of X-ray structure amplitudes distinguished by their extremely different scattering power. They are differently sensitive to the valence electron density (VED) redistribution caused by the chemical bond and must be measured by different experimental methods. Using such data, both the VED and the difference electron densities (DED) are calculated here. Comparison with theoretical densities shows that the VED is characterized by covalent, ionic and metallic contributions. The DED constructed from GaAs and Ge data demonstrates the electronic response caused by a ''protonic'' charge transfer between both f.c.c. sublattices as well as the transition from a purely covalent to a mixed covalent-ionic bond. Especially the charge-density accumulation between nearest neighbours (bond charge (BC)) depends on the distance between the bonding atoms and changes under the influence of any lattice deformation. This phenomenon is described by a BC-transfer model. Its direct experimental proof is given by measuring the variation of the scattering power of weak reflections under the influence of an external electric field. This experiment demonstrates that the ionicity of the bond changes in addition to the BC variation. (orig.)

Optical orientation of Mn{sup 2+} ions in GaAs

Energy Technology Data Exchange (ETDEWEB)

Langer, Lukas; Bayer, Manfred [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Akimov, Ilya A.; Yakovlev, Dmitri R. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Dzhioev, Roslan I.; Korenev, Vladimir L.; Kusrayev, Yuri G.; Sapega, Victor F. [A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2011-07-01

We report on optical orientation of Mn{sup 2+} ions in bulk GaAs under application of weak longitudinal magnetic fields (B {<=}150 mT). The studied samples were grown by liquid phase epitaxy and Czochralski method and were doped with a low Mn acceptor concentration of 8 x 10{sup 18} cm{sup -3}. Time resolved measurements of circular polarization for donor-acceptor photoluminescence in Faraday geometry reveal nontrivial spin dynamics of donor localized electrons. Initially the degree of polarization of the electron spins is 40%. It then decays within some tens of ns to reach a plateau. The plateau is absent at B=0 T and saturates at B=150 mT reaching the value of 35%. It's sign changes with the helicity of incident light. It follows that the s-d exchange interaction with optically oriented electrons induces a steady state non-equilibrium polarization of the Mn{sup 2+} ions. The latter maintain their spin and return part of the polarization back to the electron spin system, resulting in the plateau. This provides a long-lived electron spin memory in GaAs doped with Mn. The dynamical polarization of ionized Mn acceptors was also directly monitored using spin flip Raman scattering spectroscopy, in agreement with time-resolved data.

A two isocenter IMRT technique with a controlled junction dose for long volume targets

International Nuclear Information System (INIS)

Zeng, G G; Heaton, R K; Catton, C N; Chung, P W; O'Sullivan, B; Lau, M; Parent, A; Jaffray, D A

2007-01-01

Most IMRT techniques have been designed to treat targets smaller than the field size of conventional linac accelerators. In order to overcome the field size restrictions in applying IMRT, we developed a two isocenter IMRT technique to treat long volume targets. The technique exploits an extended dose gradient throughout a junction region of 4-6 cm to minimize the impact of field match errors on a junction dose and manipulates the inverse planning and IMRT segments to fill in the dose gradient and achieve dose uniformity. Techniques for abutting both conventional fields with IMRT ('Static + IMRT') and IMRT fields ('IMRT + IMRT') using two separate isocenters have been developed. Five long volume sarcoma cases have been planned in Pinnacle (Philips, Madison, USA) using Elekta Synergy and Varian 2100EX linacs; two of the cases were clinically treated with this technique. Advantages were demonstrated with well-controlled junction target uniformity and tolerance to setup uncertainties. The junction target dose heterogeneity was controlled at a level of ±5%; for 3 mm setup errors at the field edges, the junction target dose changed less than 5% and the dose sparing to organs at risk (OARs) was maintained. Film measurements confirmed the treatment planning results

Response of GaAs charge storage devices to transient ionizing radiation

Science.gov (United States)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Metallization systems for stable ohmic contacts to GaAs

International Nuclear Information System (INIS)

Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

1986-01-01

A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

Realization of φ Josephson junctions with a ferromagnetic interlayer

International Nuclear Information System (INIS)

Sickinger, Hanna Sabine

2014-01-01

In this thesis, φ Josephson junctions based on 0-π junctions with a ferromagnetic interlayer are studied. Josephson junctions (JJs) with a ferromagnetic interlayer can have a phase drop of 0 or π in the ground state, depending on the thickness of the ferromagnet (0 JJs or π JJs). Also, 0-π JJs can be realized, where one segment of the junction (if taken separately) is in the 0 state, while the other segment is in the π state. One can use these π Josephson junctions as a device in superconducting circuits, where it provides a constant phase shift, i.e., it acts as a π phase battery. A generalization of a π JJ is a φ JJ, which has the phase ±φ in the ground state. The value of φ can be chosen by design and tuned in the interval 0<φ<π. The φ JJs used in this experiment were fabricated as 0-π JJs with asymmetric current densities in the 0 and π facets. This system can be described by an effective current-phase relation which is tunable by an externally applied magnetic field. The first experimental evidence of such a φ JJ is presented in this thesis. In particular it is demonstrated that (a) a φ JJ has two ground states +φ and -φ, (b) the unknown state can be detected (read out) by measuring the critical current I c (I c+ or I c- ), and (c) a particular state can be prepared by applying a magnetic field or a special bias sweep sequence. These properties of a φ JJ can be utilized, for example, as a memory cell (classical bit). Furthermore, a φ Josephson junction can be used as a deterministic ratchet. This is due to the tunable asymmetry of the potential that can be changed by the external magnetic field. Rectification curves are observed for the overdamped and the underdamped case. Moreover, experimental data of the retrapping process of the phase of a φ Josephson junction depending on the temperature is presented.

Self-assembled colloidal PbS quantum dots on GaAs substrates

International Nuclear Information System (INIS)

Lue, Wei; Yamada, Fumihiko; Kamiya, Itaru

2010-01-01

We report the fabrication and analysis of self-assembled monolayer and bilayer films of colloidal PbS quantum dots (QDs) on GaAs (001) substrates. 1,6-hexanedithiol is used as link molecule between QDs and GaAs substrates. Atomic force microscopy (AFM) and photoluminescence (PL) measurements confirm the formation of PbS QD film on GaAs. For the monolayer PbS QD film, the temperature-dependent PL shows a feature typical of close-packed film. For the bilayer PbS QD film fabricated from two different mean-sized PbS QDs, we find that the stacking sequence of QDs with different size affects the quantum yield and emission wavelength of the film.

STIM proteins and the endoplasmic reticulum-plasma membrane junctions.

Science.gov (United States)

Carrasco, Silvia; Meyer, Tobias

2011-01-01

Eukaryotic organelles can interact with each other through stable junctions where the two membranes are kept in close apposition. The junction that connects the endoplasmic reticulum to the plasma membrane (ER-PM junction) is unique in providing a direct communication link between the ER and the PM. In a recently discovered signaling process, STIM (stromal-interacting molecule) proteins sense a drop in ER Ca(2+) levels and directly activate Orai PM Ca(2+) channels across the junction space. In an inverse process, a voltage-gated PM Ca(2+) channel can directly open ER ryanodine-receptor Ca(2+) channels in striated-muscle cells. Although ER-PM junctions were first described 50 years ago, their broad importance in Ca(2+) signaling, as well as in the regulation of cholesterol and phosphatidylinositol lipid transfer, has only recently been realized. Here, we discuss research from different fields to provide a broad perspective on the structures and unique roles of ER-PM junctions in controlling signaling and metabolic processes.

Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

Directory of Open Access Journals (Sweden)

Mudar Ahmed Abdulsattar

2014-12-01

Full Text Available Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm-1 compared to experimental 0.035 eV (285.2 cm-1. Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å. Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

Science.gov (United States)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Preliminary measurements of gamma ray effects on characteristics of broad-band GaAs field-effect transistor preamplifiers

International Nuclear Information System (INIS)

Jackson, H.G.; Shimizu, T.T.; Leskovar, B.

1985-01-01

The effect of gamma radiation on electrical characteristics of cryogenically cooled broad-band low-noise microwave preamplifiers has been preliminarily evaluated. The change in the gain and noise figure of a 1-2 GHz preamplifier using GaAs microwave transistors was determined at gamma doses between 10 5 rad to 5 /times/ 10 8 rad. The gain and noise figure was measured at ambient temperatures of 300 K and 80 K. 8 refs., 2 figs

Linker-dependent Junction Formation Probability in Single-Molecule Junctions

Energy Technology Data Exchange (ETDEWEB)

Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

2015-01-15

We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

Variability study of Si nanowire FETs with different junction gradients

Directory of Open Access Journals (Sweden)

Jun-Sik Yoon

2016-01-01

Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

X-ray diffraction from single GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas

2012-11-12

In recent years, developments in X-ray focussing optics have allowed to produce highly intense, coherent X-ray beams with spot sizes in the range of 100 nm and below. Together with the development of new experimental stations, X-ray diffraction techniques can now be applied to study single nanometer-sized objects. In the present work, X-ray diffraction is applied to study different aspects of the epitaxial growth of GaAs nanowires. Besides conventional diffraction methods, which employ X-ray beams with dimensions of several tens of {mu}m, special emphasis lies on the use of nanodiffraction methods which allow to study single nanowires in their as-grown state without further preparation. In particular, coherent X-ray diffraction is applied to measure simultaneously the 3-dimensional shape and lattice parameters of GaAs nanowires grown by metal-organic vapor phase epitaxy. It is observed that due to a high density of zinc-blende rotational twins within the nanowires, their lattice parameter deviates systematically from the bulk zinc-blende phase. In a second step, the initial stage in the growth of GaAs nanowires on Si (1 1 1) surfaces is studied. This nanowires, obtained by Ga-assisted growth in molecular beam epitaxy, grow predominantly in the cubic zinc-blende structure, but contain inclusions of the hexagonal wurtzite phase close to their bottom interface. Using nanodiffraction methods, the position of the different structural units along the growth axis is determined. Because the GaAs lattice is 4% larger than silicon, these nanowires release their lattice mismatch by the inclusion of dislocations at the interface. Whereas NWs with diameters below 50 nm are free of strain, a rough interface structure in nanowires with diameters above 100 nm prevents a complete plastic relaxation, leading to a residual strain at the interface that decays elastically along the growth direction. Finally, measurements on GaAs-core/InAs-shell nanowire heterostructures are presented

Structure, magnetism, and interface properties of epitactical thin Fe and FePt films on GaAs(001) substrates; Struktur, Magnetismus und Grenzflaecheneigenschaften epitaktischer duenner Fe- und FePt-Filme auf GaAs(001)-Substraten

Energy Technology Data Exchange (ETDEWEB)

Schuster, Ellen Ursula

2007-12-17

The research in this thesis is focused on the study of the Fe spin structure and interface magnetism of thin epitaxial Fe layers or epitaxial FePt alloy films with chemical L1{sub 0} order on GaAs(001) surfaces. The main method of investigation was isotope-specific conversion electron Moessbauer spectroscopy (CEMS) combined with the {sup 57}Fe probe-layer technique in the temperature range of 4.2-300 K. The film structure was studied using electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical order parameter S determined by XRD was found to increase with rising growth temperature, T{sub S}, to a maximum value of 0.71, until long range order is destroyed at T{sub S}>350 C by alloying with the substrate. As an important result a linear correlation between short-range order (revealed by the relative spectral area of the L1{sub 0} phase) and long-range order S was observed. The observed perpendicular Fe spin texture, characterized by the mean tilting angle left angle {theta} right angle of the Fe spins (relative to the film normal direction), was found to correlate with the L1{sub 0} phase content and with S. Furthermore, epitaxial Fe(001) films on GaAs(001)-(4 x 6) and on GaAs(001)-LED surfaces were grown successfully. In the initial stage of Fe film growth non-monotonous behavior of the in-plane lattice parameter was observed by RHEED. The magnetic hyperfine field distributions P(B{sub hf}) at the Fe/GaAs interface extracted from CEMS spectra for T{sub S}=-140 C or room temperature (RT) were found to be very similar. The observed large mean hyperfine fields of left angle B{sub hf} right angle {approx}25-27 T at the interface indicate the presence of high average Fe moments of 1.7-1.8 {mu}{sub B}. Nonmagnetic interface layers either can be excluded (Fe/GaAs) or are very thin (0.5 ML,Fe/GaAs-LED). Owing to its island structure an ultrathin (1.9 ML thick) uncoated Fe(001) film on GaAs(001)-(4 x 6) shows superparamagnetism with a blocking temperature of

Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs

Science.gov (United States)

Kotur, M.; Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.; Namozov, B. R.; Pak, P. E.; Kusrayev, Yu. G.

2014-03-01

A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T 1 in semiconductors. It was applied to bulk n-type GaAs, where T 1 was measured after switching off the optical excitation in magnetic fields from 400 to 1200 G at low (< 30 K) temperatures. The spin-lattice relaxation of nuclei in the studied sample with n D = 9 × 1016 cm-3 was found to be determined by hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts invariability of T 1 with the change in magnetic field and linear dependence of the relaxation rate on temperature. This result extends the experimentally verified applicability of the Korringa relaxation law in degenerate semiconductors, previously studied in strong magnetic fields (several Tesla), to the moderate field range.

Transient radiation effects in GaAs semiconductor devices

International Nuclear Information System (INIS)

Chang, J.Y.; Stauber, M.; Ezzeddine, A.; Howard, J.W.; Constantine, A.G.; Becker, M.; Block, R.C.

1988-01-01

This paper describes an ongoing program to identify the response of GaAs devices to intense pulses of ionizing radiation. The program consists of experimental measurements at the Rensselaer Polytechnic Institute's RPI electron linear accelerator (Linac) on generic GaAs devices built by Grumman Tachonics Corporation and the analysis of these results through computer simulation with the circuit model code SPICE (including radiation effects incorporated in the variations TRISPICE and TRIGSPICE and the device model code PISCES IIB). The objective of this program is the observation of the basic response phenomena and the development of accurate simulation tools so that results of Linac irradiations tests can be understood and predicted

Magnetic field effect on the energy levels of an exciton in a GaAs quantum dot: Application for excitonic lasers.

Science.gov (United States)

Jahan, K Luhluh; Boda, A; Shankar, I V; Raju, Ch Narasimha; Chatterjee, Ashok

2018-03-22

The problem of an exciton trapped in a Gaussian quantum dot (QD) of GaAs is studied in both two and three dimensions in the presence of an external magnetic field using the Ritz variational method, the 1/N expansion method and the shifted 1/N expansion method. The ground state energy and the binding energy of the exciton are obtained as a function of the quantum dot size, confinement strength and the magnetic field and compared with those available in the literature. While the variational method gives the upper bound to the ground state energy, the 1/N expansion method gives the lower bound. The results obtained from the shifted 1/N expansion method are shown to match very well with those obtained from the exact diagonalization technique. The variation of the exciton size and the oscillator strength of the exciton are also studied as a function of the size of the quantum dot. The excited states of the exciton are computed using the shifted 1/N expansion method and it is suggested that a given number of stable excitonic bound states can be realized in a quantum dot by tuning the quantum dot parameters. This can open up the possibility of having quantum dot lasers using excitonic states.

Self-Assembled Monolayers of CdSe Nanocrystals on Doped GaAs Substrates

DEFF Research Database (Denmark)

Marx, E.; Ginger, D.S.; Walzer, Karsten

2002-01-01

This letter reports the self-assembly and analysis of CdSe nanocrystal monolayers on both p- and a-doped GaAs substrates. The self-assembly was performed using a 1,6-hexanedithiol self-assembled monolayer (SAM) to link CdSe nanocrystals to GaAs substrates. Attenuated total reflection Fourier tran...

Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

2015-07-01

GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

Mass and energy dispersive recoil spectrometry of GaAs structures

International Nuclear Information System (INIS)

Hult, M.

1994-01-01

Mass and energy dispersive Recoil Spectrometry (RS) using heavy ions at energies of about 0.2Α-0.8Α MeV has attracted much interest recently due to its potential for separately and unambiguously generating information on isotopic depth distributions. The principal advantages of mass and energy dispersive RS are that both light and heavy elements can be separately studied simultaneously and problems caused by chemical matrix effects are avoided since the technique is based on high energy nucleus-nucleus scattering. In order to elucidate reactions taking place in various GaAs structures, Time of flight-Energy (ToF-E) RS was developed to allow Ga and As to be studied separately down to depths of about 500-800 nm with a depth resolution of about 16 nm at the surface. This was shown in a study of an Al x Ga 1-x As quantum-well structure. The benefits of using ToF-E RS on GaAs structures were further demonstrated in studies of Co/GaAs and CoSi 2 /GaAs reactions, as well as in a study of the composition of MOCVD grown Al x Ga 1-x As. Most recoil measurements employed 127 I at energies of about 50-90 MeV as projectiles. The recoil detector telescope consisted of a silicon energy detector and two carbon foil time pick-off detectors separated by a variable flight length of 213.5-961 mm. The reactions taking place between various thin films and GaAs were also studied using complementary techniques such as XRD, XPS and SEM. Co was found to react extensively with GaAs, already at about 300 degrees C, making it unsuitable as a contact material. Thin films of Co and Si were found to react extensively with each other and to form CoSi 2 at 500 degrees C and above. CoSi 2 , a low resistivity silicide, turned out to be stable on GaAs, at least up to 700 degrees C. Considerable grain growth could cause problems, however, in the use of CoSi 2 -contacts. 112 refs, figs, tabs

Modified energetics and growth kinetics on H-terminated GaAs (110)

International Nuclear Information System (INIS)

Galiana, B.; Benedicto, M.; Díez-Merino, L.; Tejedor, P.; Lorbek, S.; Hlawacek, G.; Teichert, C.

2013-01-01

Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As 4 , has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å 2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As 4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed

Modified energetics and growth kinetics on H-terminated GaAs (110)

Energy Technology Data Exchange (ETDEWEB)

Galiana, B. [Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Departamento de Física, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Madrid (Spain); Benedicto, M.; Díez-Merino, L.; Tejedor, P. [Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Lorbek, S.; Hlawacek, G.; Teichert, C. [Institut für Physik, Montanuniversität Leoben, Franz Josef St., 18A-8700 Leoben (Austria)

2013-10-28

Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As{sub 4}, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å{sup 2} measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As{sub 4} molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

Surface segregation and the Al problem in GaAs quantum wells

Science.gov (United States)

Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

2018-03-01

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

Modeling of altered layer formation during reactive ion etching of GaAs

Energy Technology Data Exchange (ETDEWEB)

Mutzke, A. [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Rai, A., E-mail: Abha.Rai@ipp.mpg.de [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Schneider, R.; Angelin, E.J.; Hippler, R. [Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str.6, D-17489 Greifswald (Germany)

2012-12-15

Highlights: Black-Right-Pointing-Pointer Experimental result showing the preferential sputtering of GaAs (150 keV Ar{sup +} and thermal O on GaAs) during reactive ion beam etching (RIBE) has been reported. Black-Right-Pointing-Pointer A model based on binary collisions (SDTrimSP) is presented to simulate RIBE. Black-Right-Pointing-Pointer The model is used to explain the reported experimental data and also the results by Grigonis and co-workers [1]. - Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam etching (RIBE) of GaAs in the presence of energetic Ar ions and thermal O atoms. It includes the collisional effects, diffusive processes and chemical reactions taking place in the system. The model parameters are fitted using the experimental observations of Grigonis and co-workers [1] and validated with the experimental results obtained during the GaAs ion etching presented in this paper. A detailed analysis is presented to understand the effect of the diffusive processes and the role of O during RIBE of GaAs. It is shown how the presence of damage caused by the energetic Ar coupled with the presence of thermal O opens up chemical reaction channels which eventually leads to the preferential sputtering of Ga observed at the ion etching facility at University of Greifswald.

Doping enhanced barrier lowering in graphene-silicon junctions

Science.gov (United States)

Zhang, Xintong; Zhang, Lining; Chan, Mansun

2016-06-01

Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

Strain in GaAs / InAs core-shell nanowire heterostructures grown on GaAs

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Rieger, Torsten; Lepsa, Mihail Ion [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

2012-07-01

The growth of semiconductor nanowires (NWs) has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. Compared to planar heterostructures, the nanowire approach offers an advantage regarding the possibility to form heterostructures between highly lattice mismatched systems, because the free surface of the nanowires allows to relieve the strain more efficiently. One particular way to form heterostructures in the NW geometry, is the fabrication of core-shell devices, in which a NW core is surrounded by a shell of different material. The understanding of the mutual strain between core and shell, as well as the relaxation behavior of the system are crucial for the fabrication of functional devices. In this contribution we report on first X-ray diffraction measurements of GaAs-core/InAs-shell nanowires grown on GaAs(111) by molecular beam epitaxy. Using symmetric- and grazing-incidence X-ray diffraction, the relaxation state of the InAs shell as well as the strain in the GaAs core are measured as function of the InAs shell thickness, showing a gradual relaxation behavior of the shell.

Structural and electronic properties of isovalent boron atoms in GaAs

Science.gov (United States)

Krammel, C. M.; Nattermann, L.; Sterzer, E.; Volz, K.; Koenraad, P. M.

2018-04-01

Boron containing GaAs, which is grown by metal organic vapour phase epitaxy, is studied at the atomic level by cross-sectional scanning tunneling microscopy (X-STM) and spectroscopy (STS). In topographic X-STM images, three classes of B related features are identified, which are attributed to individual B atoms on substitutional Ga sites down to the second layer below the natural {110} cleavage planes. The X-STM contrast of B atoms below the surface reflects primarily the structural modification of the GaAs matrix by the small B atoms. However, B atoms in the cleavage plane have in contrast to conventional isovalent impurities, such as Al and In, a strong influence on the local electronic structure similar to donors or acceptors. STS measurements show that B in the GaAs {110} surfaces gives rise to a localized state short below the conduction band (CB) edge while in bulk GaAs, the B impurity state is resonant with the CB. The analysis of BxGa1-xAs/GaAs quantum wells reveals a good crystal quality and shows that the incorporation of B atoms in GaAs can be controlled along the [001] growth direction at the atomic level. Surprisingly, the formation of the first and fourth nearest neighbor B pairs, which are oriented along the directions, is strongly suppressed at a B concentration of 1% while the third nearest neighbor B pairs are found more than twice as often than expected for a completely spatially random pattern.

Polarized recombination of acoustically transported carriers in GaAs nanowires

Science.gov (United States)

Möller, Michael; Hernández-Mínguez, Alberto; Breuer, Steffen; Pfüller, Carsten; Brandt, Oliver; de Lima, Mauricio M.; Cantarero, Andrés; Geelhaar, Lutz; Riechert, Henning; Santos, Paulo V.

2012-05-01

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.

Magnetic field manipulation of spin current in a single-molecule magnet tunnel junction with two-electron Coulomb interaction

Science.gov (United States)

Zhang, Chao; Yao, Hui; Nie, Yi-Hang; Liang, Jiu-Qing; Niu, Peng-Bin

2018-04-01

In this work, we study the generation of spin-current in a single-molecule magnet (SMM) tunnel junction with Coulomb interaction of transport electrons and external magnetic field. In the absence of field the spin-up and -down currents are symmetric with respect to the initial polarizations of molecule. The existence of magnetic field breaks the time-reversal symmetry, which leads to unsymmetrical spin currents of parallel and antiparallel polarizations. Both the amplitude and polarization direction of spin current can be controlled by the applied magnetic field. Particularly when the magnetic field increases to a certain value the spin-current with antiparallel polarization is reversed along with the magnetization reversal of the SMM. The two-electron occupation indeed enhances the transport current compared with the single-electron process. However the increase of Coulomb interaction results in the suppression of spin-current amplitude at the electron-hole symmetry point. We propose a scheme to compensate the suppression with the magnetic field.

Effects produced in GaAs by MeV ion bombardment

International Nuclear Information System (INIS)

Wie, C.R.

1985-01-01

The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

International Nuclear Information System (INIS)

Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

2014-01-01

We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4 A 2 ( 4 F) → 4 T 1 ( 4 G) and 4 T 1 ( 4 G) → 6 A 1 ( 6 S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs

Two-dimensional non-volatile programmable p-n junctions

Science.gov (United States)

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface

International Nuclear Information System (INIS)

Liu, Y. C.; Hung, H. Y.; Kwo, J.; Chen, Y. W.; Lin, Y. H.; Cheng, C. K.; Hong, M.; Tseng, S. C.; Hsu, C. H.; Chang, M. T.; Lo, S. C.

2015-01-01

Single crystal ferromagnetic Fe 3 Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe 3 Si/GaAs(111) yielded a saturation moment of 990 emu/cm 3 with a small coercive field ≤1 Oe at room temperature

Fluxons in long and annular intrinsic Josephson junction stacks

CERN Document Server

Clauss, T; Moessle, M; Müller, A; Weber, A; Kölle, D; Kleiner, R

2002-01-01

A promising approach towards a THz oscillator based on intrinsic Josephson junctions in high-temperature superconductors is based on the collective motion of Josephson fluxons, which are predicted to form various configurations ranging from a triangular to a quadratic lattice. Not only for this reason, but certainly also for the sake of basic physics, several experimental and theoretical investigations have been done on the subject of collective fluxon dynamics in stacked intrinsic Josephson junctions. In this paper we will present some experimental results on the fluxon dynamics of long intrinsic Josephson junction stacks made of Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8. The stacks were formed either in an open or in an annular geometry, and clear resonant fluxon modes were observed. Experiments discussed include measurements of current-voltage characteristics in external magnetic fields and in external microwave fields.

Nonlinear optical rectification and second and third harmonic generation in GaAs δ-FET systems under hydrostatic pressure

International Nuclear Information System (INIS)

Martínez-Orozco, J.C.; Mora-Ramos, M.E.; Duque, C.A.

2012-01-01

The GaAs n-type delta-doped field effect transistor is proposed as a source for nonlinear optical responses such as second order rectification and second and third harmonic generation. Particular attention is paid to the effect of hydrostatic pressure on these properties, related with the pressure-induced modifications of the energy level spectrum. The description of the one-dimensional potential profile is made including Hartree and exchange and correlation effects via a Thomas–Fermi-based local density approximation. The allowed energy levels are calculated within the effective mass and envelope function approximations by means of an expansion over an orthogonal set of infinite well eigenfunctions. The results for the coefficients of nonlinear optical rectification and second and third harmonic generation are reported for several values of the hydrostatic pressure. - Highlights: ► GaAs n-type delta-doped field effect transistor. ► NOR and SHG are enhanced as a result of the pressure. ► THG is quenched as a result of the pressure. ► The zero pressure situation is the best scenario for the THG.

Dispersion Mechanisms of a Tidal River Junction in the Sacramento–San Joaquin Delta, California

Directory of Open Access Journals (Sweden)

Karla T. Gleichauf

2014-12-01

Full Text Available doi: http://dx.doi.org/10.15447/sfews.2014v12iss4art1In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Doppler Current Profile (ADCP boat transecting and moored ADCPs over a spring–neap tidal cycle (May to  June 2012 monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011 advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales. The study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby

Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

Energy Technology Data Exchange (ETDEWEB)

Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc, E-mail: jean-luc.pelouard@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); Haïdar, Riad [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); École Polytechnique, Département de Physique, F-91128 Palaiseau (France)

2014-07-07

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

International Nuclear Information System (INIS)

Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc; Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel; Haïdar, Riad

2014-01-01

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

2007-07-15

ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

Bifurcation and chaos in a dc-driven long annular Josephson junction

DEFF Research Database (Denmark)

Grnbech-Jensen, N.; Lomdahl, Peter S.; Samuelsen, Mogens Rugholm

1991-01-01

Simulations of long annular Josephson junctions in a static magnetic field show that in large regions of bias current the system can exhibit a period-doubling bifurcation route to chaos. This is in contrast to previously studied Josephson-junction systems where chaotic behavior has primarily been...

Amateurism in an Age of Professionalism: An Empirical Examination of an Irish Sporting Culture: The GAA

Directory of Open Access Journals (Sweden)

Ian Keeler

2013-07-01

This research study recommends that the GAA adopt an innovative approach, through strategic decision-making, to allow the GAA to maintain its amateur ethos, and, yet, successfully compete in the professional sporting market. The strong links with the community must be both nurtured and enhanced. The GAA and Gaelic games must embrace the challenges that the branding success of foreign sports has brought. Player welfare issues for the elite players must be addressed while continuing to protect the club and its amateur structures. The study looks at the key metrics that are required to evolve the GAA. This entails not only focusing on the perceived importance of the amateur ethos to the GAA, but also developing the marketing, branding and profiling of Gaelic games to enhance the performance of an amateur sporting organization in an era of increased professionalism in sport.

Effect of dopant density on contact potential difference across n-type GaAs homojunctions using Kelvin Probe Force Microscopy

Science.gov (United States)

Boumenou, C. Kameni; Urgessa, Z. N.; Djiokap, S. R. Tankio; Botha, J. R.; Nel, J.

2018-04-01

In this study, cross-sectional surface potential imaging of n+/semi-insulating GaAs junctions is investigated by using amplitude mode kelvin probe force microscopy. The measurements have shown two different potential profiles, related to the difference in surface potential between the semi-insulating (SI) substrate and the epilayers. It is shown that the contact potential difference (CPD) between the tip and the sample is higher on the semi-insulating substrate side than on the n-type epilayer side. This change in CPD across the interface has been explained by means of energy band diagrams indicating the relative Fermi level positions. In addition, it has also been found that the CPD values across the interface are much smaller than the calculated values (on average about 25% of the theoretical values) and increase with the electron density. Therefore, the results presented in study are only in qualitative agreement with the theory.

Dynamical properties of tertiarybutylarsine on GaAs(0 0 1) surface

CERN Document Server

Ozeki, M; Tanaka, Y

2002-01-01

The dynamical properties of tertiarybutylarsine (TBA) was studied on GaAs(0 0 1) surface using a supersonic molecular beam. The temperature and incident energy dependence of the reflected beam revealed a reaction channel of TBA on GaAs surface with a large decrease in the activation energy from 2.7 to 1.8 eV as the incident energy increases from 0.04 to 2.5 eV.

Microhardness of epitaxial layers of GaAs doped with rare earths

International Nuclear Information System (INIS)

Kulish, U.M.; Gamidov, Z.S.; Kuznetsova, I.Yu.; Petkeeva, L.N.; Borlikova, G.V.

1989-01-01

Results of the study of microhardness of GaAS layer doped by certain rare earths - Gd, Tb, Dy - are presented. The assumption is made that the higher is the value of the first potential of rare earth impurity ionization (i.e. the higher is the filling of 4f-shell), the lower is the effect of the element on electric and mechanical properties of GaAs epitaxial layers

The influence of annealing on manganese implanted GaAs films

International Nuclear Information System (INIS)

Buerger, Danilo; Zhou, Shengqiang; Grenzer, Joerg; Reuther, Helfried; Anwand, Wolfgang; Gottschalch, Volker; Helm, Manfred; Schmidt, Heidemarie

2009-01-01

Besides low-temperature molecular beam epitaxy, ion implantation provides an alternative route to incorporate Mn into GaAs above the equilibrium solubility limit. Recently, Mn implanted GaAs diluted magnetic semiconductor was obtained by pulsed laser annealing. However, post-implantation annealing can lead to the formation of secondary phases. In order to compare the post-annealing effect, we investigate GaMnAs by implanting up to 6 at% Mn followed by rapid thermal and flashlamp annealing. The structural properties were probed by high resolution X-ray diffraction. The magnetic properties were determined by SQUID measurements. Auger electron spectroscopy has been used to profile the depth distribution of Mn in GaAs after implantation and annealing. We elucidate after implantation a loss of As and that during rapid thermal annealing most of the Mn diffuses towards the surface. Flash lamp annealing prevents out-diffusion, but the recrystallisation efficiency is low. Only the flash lamp annealed samples reveal weak ferromagnetism.

Majorana splitting from critical currents in Josephson junctions

Science.gov (United States)

Cayao, Jorge; San-Jose, Pablo; Black-Schaffer, Annica M.; Aguado, Ramón; Prada, Elsa

2017-11-01

A semiconducting nanowire with strong Rashba spin-orbit coupling and coupled to a superconductor can be tuned by an external Zeeman field into a topological phase with Majorana zero modes. Here we theoretically investigate how this exotic topological superconductor phase manifests in Josephson junctions based on such proximitized nanowires. In particular, we focus on critical currents in the short junction limit (LN≪ξ , where LN is the junction length and ξ is the superconducting coherence length) and show that they contain important information about nontrivial topology and Majoranas. This includes signatures of the gap inversion at the topological transition and a unique oscillatory pattern that originates from Majorana interference. Interestingly, this pattern can be modified by tuning the transmission across the junction, thus providing complementary evidence of Majoranas and their energy splittings beyond standard tunnel spectroscopy experiments, while offering further tunability by virtue of the Josephson effect.

Dielectric properties of biological tissues in which cells are connected by communicating junctions

International Nuclear Information System (INIS)

Asami, Koji

2007-01-01

The frequency dependence of the complex permittivity of biological tissues has been simulated using a simple model that is a cubic array of spherical cells in a parallel plate capacitor. The cells are connected by two types of communicating junctions: one is a membrane-lined channel for plasmodesmata in plant tissues, and the other is a conducting patch of adjoining plasma membranes for gap junctions in animal tissues. Both junctions provided similar effects on the dielectric properties of the tissue model. The model without junction showed a dielectric relaxation (called β-dispersion) that was expected from an interfacial polarization theory for a concentrated suspension of spherical cells. The dielectric relaxation was the same as that of the model in which neighbouring cells were connected by junctions perpendicular to the applied electric field. When neighbouring cells were connected by junctions parallel to the applied electric field or in all directions, a dielectric relaxation appeared at a lower frequency side in addition to the β-dispersion, corresponding to the so called α-dispersion. When junctions were randomly introduced at varied probabilities P j , the low-frequency (LF) relaxation curve became broader, especially at P j of 0.2-0.5, and its intensity was proportional to P j up to 0.7. The intensity and the characteristic frequency of the LF relaxation both decreased with decreasing junction conductance. The simulations indicate that communicating junctions are important for understanding the LF dielectric relaxation in tissues

Dielectric properties of biological tissues in which cells are connected by communicating junctions

Science.gov (United States)

Asami, Koji

2007-06-01

The frequency dependence of the complex permittivity of biological tissues has been simulated using a simple model that is a cubic array of spherical cells in a parallel plate capacitor. The cells are connected by two types of communicating junctions: one is a membrane-lined channel for plasmodesmata in plant tissues, and the other is a conducting patch of adjoining plasma membranes for gap junctions in animal tissues. Both junctions provided similar effects on the dielectric properties of the tissue model. The model without junction showed a dielectric relaxation (called β-dispersion) that was expected from an interfacial polarization theory for a concentrated suspension of spherical cells. The dielectric relaxation was the same as that of the model in which neighbouring cells were connected by junctions perpendicular to the applied electric field. When neighbouring cells were connected by junctions parallel to the applied electric field or in all directions, a dielectric relaxation appeared at a lower frequency side in addition to the β-dispersion, corresponding to the so called α-dispersion. When junctions were randomly introduced at varied probabilities Pj, the low-frequency (LF) relaxation curve became broader, especially at Pj of 0.2-0.5, and its intensity was proportional to Pj up to 0.7. The intensity and the characteristic frequency of the LF relaxation both decreased with decreasing junction conductance. The simulations indicate that communicating junctions are important for understanding the LF dielectric relaxation in tissues.

Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

International Nuclear Information System (INIS)

Hong-Bin, Pu; Lin, Cao; Zhi-Ming, Chen; Jie, Ren; Ya-Gong, Nan

2010-01-01

This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H—SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Eight-logic memory cell based on multiferroic junctions

International Nuclear Information System (INIS)

Yang Feng; Zhou, Y C; Tang, M H; Liu Fen; Ma Ying; Zheng, X J; Zhao, W F; Xu, H Y; Sun, Z H

2009-01-01

A model is proposed for a device combining a multiferroic tunnel junction with a magnetoelectric (ME) film in which the magnetic configuration is controlled by the electric field. Calculations embodying the Green's function approach show that the magnetic polarization can be switched on and off by an electric field in the ME film due to the effect of elastic coupling interaction. Using a model including the spin-filter effect and screening of polarization charges, we have produced eight logic states of tunnelling resistance in the tunnel junction and have obtained corresponding laws that control them. The results provide some insights into the realization of an eight-logic memory cell. (fast track communication)

Singularities of current-voltage characteristics of GaAs films fabricated by pulsed ions ablation

International Nuclear Information System (INIS)

Kabyshev, A.V.; Konusov, F.V.; Lozhnikov, S.N.; Remnev, G.E.; Saltymakov, M.S.

2009-01-01

A singularities and advantages of the optical, photoelectric and electrical properties of GaAs in comparison with other available materials for electronics, for example, silicon allow to manufacture on it base the devices having an advanced characteristics. The GaAs for electronics, obtained from the dense ablation plasma, possess some preferences as compared to material manufactured by traditional methods of vacuum deposition. The electrical characteristics of GaAs produced by chemical deposition were extensively studied. Purpose of this work is investigation the current-voltage characteristics of thin films of GaAs, deposited on polycrystalline corundum (polycor) from plasma forming the power ions bunch and determination of the thermal vacuum annealing effect on photoelectric and electrical properties of films. Peculiarities of optical, photoelectric and current-voltage characteristics of films obtained by ions ablation are determined by deposition conditions and resistance of initial target GaAs. The transitions between the states with low- and high conduction were revealed directly after deposition in films having the optical properties similar to amorphous materials and/or after annealing in films with properties similar to initial target GaAs. Behavior of current-voltage characteristics at vacuum annealing correlates with Schottky barrier height and photosensitivity and is accompanies of the transport mechanism change. The stable properties of films are formed at its dark conduction 10 -10 -10 -8 s and after annealing at T an =600-700 K. (authors)

Lateral n-p-n bipolar transistors by ion implantation into semi-insulating GaAs

International Nuclear Information System (INIS)

Canfield, P.; Forbes, L.

1988-01-01

GaAs bipolar transistors have not seen the major development effort that GaAs MESFETs have due primarily to the short minority carrier lifetimes in GaAs. The short minority carrier lifetimes require that the base region be very thin which, if done by implantation, requires that the doping be high to obtain a well defined base profile. These requirements are very difficult to achieve in GaAs and typically, if high current gain and high speed are desired for a bipolar technology, then heterostructure bipolars are the appropriate technology, although the cost of heterostructure devices will be prohibitive for some time to come. For applications requiring low current gain, more modest fabrication rules can be followed. Lateral bipolars are particularly attractive since they would be easier to fabricate than a planar bipolar or a heterojunction bipolar. Lateral bipolars do not require steps or deep contacts to make contact with the subcollector or highly doped very thin epilayers for the base region and they can draw upon the semi-insulating properties of the GaAs substrates for device isolation. Bipolar transistors are described and shown to work successfully. (author)

Conductance of graphene based normal-superconductor junction with double magnetic barriers

Science.gov (United States)

Abdollahipour, B.; Mohebalipour, A.; Maleki, M. A.

2018-05-01

We study conductance of a graphene based normal metal-superconductor junction with two magnetic barriers. The magnetic barriers are induced via two applied magnetic fields with the same magnitudes and opposite directions accompanied by an applied electrostatic potential. We solve Dirac-Bogoliubov-De-Gennes (DBdG) equation to calculate conductance of the junction. We find that applying the magnetic field leads to suppression of the Andreev reflection and conductance for all energies. On the other hand, we observe a crossover from oscillatory to tunneling behavior of the conductance as a function of the applied potential by increasing the magnetic field.

Role of structural relaxations and chemical substitutions on piezoelectric fields and potential lineup in GaN/Al junctions

Science.gov (United States)

Picozzi, S.; Profeta, G.; Continenza, A.; Massidda, S.; Freeman, A. J.

2002-04-01

First-principles full-potential linearized augmented plane wave calculations are performed to clarify the role of the interface geometry on piezoelectric fields and potential lineups in [0001] wurtzite and [111]-zincblende GaN/Al junctions. The electric field (polarity and magnitude) is found to be strongly affected by atomic relaxations in the interface region. A procedure is used to evaluate the Schottky-barrier height in the presence of electric fields, showing that their effect is relatively small (a few tenths of an eV). These calculations assess the rectifying behavior of the GaN/Al contact, in agreement with experimental values for the barrier. We disentangle chemical and structural effects on the relevant properties (such as the potential discontinuity and the electric field) by studying unrelaxed ideal nitride/metal systems. Using simple electronegativity arguments, we outline the leading mechanisms that define the values of the electric field and Schottky barrier in these ideal systems. Finally, the transitivity rule is proved to be well satisfied.

Neutron-damaged GaAs detectors for use in a Compton spectrometer

International Nuclear Information System (INIS)

Kammeraad, J.E.; Sale, K.E.; Wang, C.L.; Baltrusaitis, R.M.

1992-01-01

Detectors made of GaAs are being studies for use on the focal plane of a Compton spectrometer which measures 1-MeV to 25-MeV gamma rays with high energy resolution (1% or 100 keV, whichever is greater) and 200-ps time resolution. The detectors are GaAs chips that have been neutron-damaged to improve the time response. The detectors will be used to measure fast transient signals in the current mode. The properties of various GaAs detector configurations are being studied by bombarding sample detectors with short pulses of 4-MeV to 16-MeV electrons at the Linac Facility at EG ampersand G Energy Measurements, Inc., Santa Barbara Operations. Measurements of detector sensitivity and impulse response versus detector bias, thickness, and electron beam energy and intensity have been performed and are presented. 5 refs

ITER TASK T252 (1995):Gamma radiation testing of a GaAs operational amplifier for instrument applications

International Nuclear Information System (INIS)

Hiemstra, D.

1996-03-01

The purpose of this 1995 ITER task was : to build an improved operational amplifier using GaAs MESFET technology, to build a reference voltage subcircuit using GaAs MESFET technology and to investigate the potential of GaAs HBT's to improve the noise performance of the GaAs MESFET operational amplifier. This work addresses the need for instrumentation-grade components to read sensors in an experimental fusion reactor, where the anticipated total dose for a useful service life is 3Grad(GaAs). It is an extension of our 1994 work. 3 tabs., 6 figs

Basic mechanisms study for MIS solar cell structures on GaAs

Science.gov (United States)

Fonash, S. J.

1978-01-01

The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

Science.gov (United States)

Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

2018-02-01

Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

Nitride surface passivation of GaAs nanowires: impact on surface state density.

Science.gov (United States)

Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

2015-01-14

Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

Growth and electronic properties of two-dimensional systems on (110) oriented GaAs

Energy Technology Data Exchange (ETDEWEB)

Fischer, F.

2005-07-01

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type layers on (110) GaAs. Besides we investigated the activation process related to the conduction in the valence band and a parallelly conducting hopping band. The new two-dimensional hole gases revealed interesting physics. We studied the zero B-field spin splitting in these systems and compared it with the known theory. Furthermore, we investigated the anisotropy of the mobility. As opposed to the expectations we observed a strong persistent photoconductivity in our samples. Landau levels for two dimensional hole systems are non-linear and can show anticrossings. For the first time we were able to resolve anticrossings in a transport experiment and study the corresponding activation process. Finally, we compared these striking results with theoretical calculations. (orig.)

Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

Directory of Open Access Journals (Sweden)

Bin Fang

2016-12-01

Full Text Available We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

X-ray electron density distribution of GaAs

International Nuclear Information System (INIS)

Pietsch, U.

1986-01-01

Using ten X-ray structure amplitudes of strong reflections and nine weak reflections both, the valence electron and the difference electron density distribution of GaAs, are calculated. The experimental data are corrected for anomalous dispersion using a bond charge model. The calculated plots are compared with up to now published band structure-based and semiempirically calculated density plots. Taking into account the experimental data of germanium, measured on the same absolute scale, the difference density between GaAs and Ge is calculated. This exhibits the charge transfer between both the f.c.c.-sublattices as well as both, the shift and the decrease of the bond charge, quite closely connected to the theoretical results published by Baur et al. (author)

Effect of Abrikosov vortices on Josephson junction currents in high temperature superconductors

International Nuclear Information System (INIS)

Mitchell, E.; Mueller, K.-H.

2000-01-01

Full text: The current-carrying capacity of high temperature superconductors (HTS) is limited by the weak links which form between individual grains. We investigate the role of Abrikosov vortices (AV) and inhomogeneities at the intergrain boundary by examining the high magnetic field characteristics of HTS thin film grain boundary junctions. We model the effects of junction inhomogeneity, AV's and vortex pinning by solving the inhomogeneous London equation. The calculations show that both inhomogeneities and the presence of AV's improve the current-carrying capacity across grain boundaries at high magnetic fields. Our experimental measurements of the irreversibility of the junction critical current density J c (H a ) find good agreement with the model

Electrical properties of Ga ion beam implanted GaAs epilayer

International Nuclear Information System (INIS)

Hirayama, Yoshiro; Okamoto, Hiroshi

1985-01-01

Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n + and p + GaAs epilayers. For originally n + epilayers, this resistivity enhancement is maintained after annealing as high as 800 deg C. However this enhancement disappears after annealing at above 650 deg C for p + epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 μm or less, and is attractive for a device fabrication process to electrically isolate integrated elements. (author)

Electric field control photo-induced Hall currents in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-10-15

We generate spin-polarized carrier populations in GaAs and low temperature-grown GaAs (LT-GaAs) by circularly polarized optical beams and pull them by external electric fields to create spin-polarized currents. In the presence of the optically generated spin currents, anomalous Hall currents with an enhancement with increasing doping are observed and found to be almost steady in moderate electric fields up to {approx}120 mV {mu}m{sup -1}, indicating that photo-induced spin orientation of electrons is preserved in these systems. However, a field {approx}300 mV {mu}m{sup -1} completely destroys the electron spin polarization due to an increase of the D'yakonov-Perel' spin precession frequency of the hot electrons. This suggests that high field carrier transport conditions might not be suitable for spin-based technology with GaAs and LT-GaAs. It is also demonstrated that the presence of the excess arsenic sites in LT-GaAs might not affect the spin relaxation by Bir-Aronov-Pikus mechanism owing to a large number of electrons in n-doped materials.

Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region

International Nuclear Information System (INIS)

Klyui, N. I.; Lozinskii, V. B.; Liptuga, A. I.; Dikusha, V. N.; Oksanych, A. P.; Kogdas’, M. G.; Perekhrest, A. L.; Pritchin, S. E.

2017-01-01

The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.

Gap Junctions

Science.gov (United States)

Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

2013-01-01

Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

Theoretical modeling of a new structure of III-V tandem solar cells by ...

African Journals Online (AJOL)

junction solar cell is theoretically investigated by optimizing the thickness of GaAs and GaInPandusing a new optical model to separate the junction between the two solar cell in order to solve problems of tunnel junction and difficulties of fabrication.

Epitaxial ferromagnetic Fe{sub 3}Si on GaAs(111)A with atomically smooth surface and interface

Energy Technology Data Exchange (ETDEWEB)

Liu, Y. C.; Hung, H. Y.; Kwo, J., E-mail: chsu@nsrrc.org.tw, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Chen, Y. W.; Lin, Y. H.; Cheng, C. K.; Hong, M., E-mail: chsu@nsrrc.org.tw, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Tseng, S. C.; Hsu, C. H., E-mail: chsu@nsrrc.org.tw, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Chang, M. T.; Lo, S. C. [Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China)

2015-09-21

Single crystal ferromagnetic Fe{sub 3}Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe{sub 3}Si/GaAs(111) yielded a saturation moment of 990 emu/cm{sup 3} with a small coercive field ≤1 Oe at room temperature.

Simulated and experimental spectroscopic performance of GaAs X-ray pixel detectors

International Nuclear Information System (INIS)

Bisogni, M.G.; Cola, A.; Fantacci, M.E.

2001-01-01

In pixel detectors, the electrode geometry affects the signal shape and therefore the spectroscopic performance of the device. This effect is enhanced in semiconductors where carrier trapping is relevant. In particular, semi insulating (SI) GaAs crystals present an incomplete charge collection due to a high concentration of deep traps in the bulk. In the last few years, SI GaAs pixel detectors have been developed as soft X-ray detectors for medical imaging applications. In this paper, we present a numerical method to evaluate the local charge collection properties of pixel detectors. A bi-dimensional description has been used to represent the detector geometry. According to recent models, the active region of a reverse biased SI GaAs detector is almost neutral. Therefore, the electrostatic potential inside a full active detector has been evaluated using the Laplace equation. A finite difference method with a fixed step orthogonal mesh has been adopted. The photon interaction point has been generated with a Monte Carlo method according to the attenuation length of a monochromatic X-ray beam in GaAs. The number of photogenerated carriers for each interaction has been extracted using a gaussian distribution. The induced signal on the collecting electrode has been calculated according to the Ramo's theorem and the trapping effect has been modeled introducing electron and hole lifetimes. The noise of the charge preamplifier have been also taken into account. A comparison between simulated and experimental X-ray spectra from a 241 Am source acquired with different GaAs pixel detectors has been carried out

Ion implantation in compound semiconductors for high-performance electronic devices

International Nuclear Information System (INIS)

Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

1996-01-01

Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb

Towards low-dimensional hole systems in Be-doped GaAs nanowires

DEFF Research Database (Denmark)

Ullah, A. R.; Gluschke, J. G.; Jeppesen, Peter Krogstrup

2017-01-01

-gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good......GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly confined 0D and 1D hole systems with strong spin–orbit effects, motivating...... our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top...

Technology computer aided design for Si, SiGe and GaAs integrated circuits

CERN Document Server

Armstrong, GA

2007-01-01

The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-

Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns

Energy Technology Data Exchange (ETDEWEB)

Baudrit, Mathieu; Algora, Carlos [Instituto de Energia Solar, Universidad Politecnica de Madrid (Spain)

2010-02-15

A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means of realistic models and an improved optimization routine. The starting point device was the recent world-record monolithic GaInP/GaAs dual-junction solar cell that was grown lattice matched on a GaAs substrate by MOVPE, which has an efficiency of 32.6% at 1000 suns. Using previously calibrated models developed at our institution, IES-UPM, together with Silvaco ATLAS TCAD software, we reproduced the characteristics of the world-record solar cell, and then determined a cell configuration that would yield greater efficiency by using an optimization routine to hone the doping concentration and the thickness of each layer. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Investigation of the GaN-on-GaAs interface for vertical power device applications

International Nuclear Information System (INIS)

Möreke, Janina; Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

2014-01-01

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Investigation of the GaN-on-GaAs interface for vertical power device applications

Energy Technology Data Exchange (ETDEWEB)

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Resistance Fluctuations in GaAs Nanowire Grids

Directory of Open Access Journals (Sweden)

Ivan Marasović

2014-01-01

Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

Stability of fluxon motion in long Josephson junctions at high bias

DEFF Research Database (Denmark)

Pagano, S.; Sørensen, Mads Peter; Christiansen, Peter Leth

1988-01-01

In long Josephson junctions the motion of fluxons is revealed by the existence of current steps, zero-field steps, in the current-voltage characteristics. In this paper we investigate the stability of the fluxon motion when high values of the current bias are involved. The investigation is carried...... dissipations and of the junction length on the switching-current value is investigated. A simple boundary model is able to describe, for junctions of overlap geometry, the qualitative dependence of the switching current on the system parameters....

Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang; Li, Guoqiang

2014-01-01

High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In x Ga 1−x As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In x Ga 1−x As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In x Ga 1−x As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In x Ga 1−x As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In x Ga 1−x As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In x Ga 1−x As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates

Half-Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice-matched to GaAs (Si), for solar cell application: A first-principles study

KAUST Repository

Belmiloud, N.

2016-01-10

A systematic theoretical study of the structural and electronic properties of new half-Heusler compounds is performed to find the appropriate target key physical parameters for photovoltaic application. As a result, five ternary half-Heusler compounds ScAgC, YCuC, CaZnC, NaAgO, and LiCuS are studied by density functional theory for potential applications in multi-junction solar cells. The calculated formation enthalpies indicate that these materials are thermodynamically stable. Using state-of-the-art modified Becke-Johnson exchange potential approximation, we find a direct band gap close to 1eV (∼1.88eV) for ScAgC, YCuC, CaZnC, NaAgO (LiCuS) being quasi-lattice matched to GaAs (Si). In addition, the band offsets between half-Heusler compounds and GaAs (Si) and their consequences for heterostructures are derived using the modified Tersoff method for the branch-point energy. Furthermore, the elastic constants and phonon dispersion curves are calculated. They indicate the respective mechanical and dynamical stability of these half-Heusler compounds. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Manifestation of π-contacts in magnetic field dependence of I-V characteristics for proximity-type 2D Josephson junction array

International Nuclear Information System (INIS)

Rivera, V.A.G.; Sergeenkov, S.; Marega, E.; Araujo-Moreira, F.M.

2009-01-01

Results on the temperature and magnetic field dependence of current-voltage characteristics (CVC) are presented for SNS-type 2D ordered array of Nb-Cu 0.95 Al 0.05 -Nb junctions. The critical current I C (T,H) and the power exponent a(T,H)=1+Φ 0 I C (T,H)/2k B T of the nonlinear CVC law V=R[I-I C (T,H)] a(T,H) are found to have a maximum at non-zero value of applied magnetic field H p =225 Oe, which is attributed to manifestation of π-type Josephson contacts in our sample.

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

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Fedorov A

2010-01-01

Full Text Available Abstract We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.

H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures

International Nuclear Information System (INIS)

Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

2014-01-01

The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs 1-x N x /GaAs 1-x N x :H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs 0.991 N 0.009 wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs 0.992 N 0.008 wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence

n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC

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Zhiqiang Zhang

2017-06-01

Full Text Available To achieve radio frequency (RF power detection, gain control, and circuit protection, this paper presents n+ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC process. Experiments show that these sensors have reflection losses of less than −17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µV/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µV/mW for the sensor with the thermal slug and the back cavity, respectively.

Inducer-independent production of pectinases in Aspergillus niger by overexpression of the D-galacturonic acid-responsive transcription factor gaaR.

Science.gov (United States)

Alazi, Ebru; Knetsch, Tim; Di Falco, Marcos; Reid, Ian D; Arentshorst, Mark; Visser, Jaap; Tsang, Adrian; Ram, Arthur F J

2018-03-01

The transcription factor GaaR is needed for the expression of genes required for pectin degradation and transport and catabolism of the main degradation product, D-galacturonic acid (GA) in Aspergillus niger. In this study, we used the strong constitutive gpdA promoter of Aspergillus nidulans to overexpress gaaR in A. niger. Overexpression of gaaR resulted in an increased transcription of the genes encoding pectinases, (putative) GA transporters, and catabolic pathway enzymes even under non-inducing conditions, i.e., in the absence of GA. Exoproteome analysis of a strain overexpressing gaaR showed that this strain secretes highly elevated levels of pectinases when grown in fructose. The genes encoding exo-polygalacturonases were found to be subjected to CreA-mediated carbon catabolite repression, even in the presence of fructose. Deletion of creA in the strain overexpressing gaaR resulted in a further increase in pectinase production in fructose. We showed that GaaR localizes mainly in the nucleus regardless of the presence of an inducer, and that overexpression of gaaR leads to an increased concentration of GaaR in the nucleus.

Weak-field precession of nano-pillar spin-torque oscillators using MgO-based perpendicular magnetic tunnel junction

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Zhang, Changxin; Fang, Bin; Wang, Bochong; Zeng, Zhongming

2018-04-01

This paper presents a steady auto-oscillation in a spin-torque oscillator using MgO-based magnetic tunnel junction (MTJ) with a perpendicular polarizer and a perpendicular free layer. As the injected d.c. current varied from 1.5 to 3.0 mA under a weak magnetic field of 290 Oe, the oscillation frequency decreased from 1.85 to 1.3 GHz, and the integrated power increased from 0.1 to 74 pW. A narrow linewidth down to 7 MHz corresponding to a high Q factor of 220 was achieved at 2.7 mA, which was ascribed to the spatial coherent procession of the free layer magnetization. Moreover, the oscillation frequency was quite sensitive to the applied field, about 3.07 MHz/Oe, indicating the potential applications as a weak magnetic field detector. These results suggested that the MgO-based MTJ with perpendicular magnetic easy axis could be helpful for developing spin-torque oscillators with narrow-linewidth and high sensitive.

Nanoscale footprints of self-running gallium droplets on GaAs surface.

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Jiang Wu

Full Text Available In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001 surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems.

Polaron binding energy and effective mass in the GaAs film

International Nuclear Information System (INIS)

Wu Zhenhua; Yan Liangxing; Tian Qiang; Li Hua; Liu Bingcan

2012-01-01

The binding energy and effective mass of a polaron in a GaAs film deposited on the Al 0.3 Ga 0.7 As substrate are studied theoretically by using the fractional-dimensional space approach. Our calculations show that the polaron binding energy and mass shift decrease monotonously with increasing the film thickness. For the film thicknesses with L w ≤ 70Å and the substrate thicknesses with L b ≤ 200Å, the different values of the substrate thickness influence the polaron binding energy and mass shift in the GaAs film. The polaron binding energy and mass shift increase monotonously with increasing the substrate thickness. For the film thickness with L w ≥ 70Å or the substrate thicknesses with L b ≤ 200Å, the different values of the substrate thickness have no significant influence on the polaron binding energy and mass shift in the GaAs film deposited on the Al 0.3 Ga 0.7 As substrate.

Shielding the spinal cord is necessary when junctioning abutting fields with independent collimation in head and neck radiotherapy

International Nuclear Information System (INIS)

Rosenthal, David I.; McDonough, James; Kassaee, Alireza

1997-01-01

Purpose: Asymmetric collimation is a relatively new method of junctioning abutting fields with non-diverging beam edges. When this technique is used at the junction of lateral and low anterior fields in three field head and neck set ups, there should, in theory, be a perfect match. There should be no overdose or underdose at the match line. We have performed dosimetric measurements to evaluate the actual dosimetry at the central axis. Materials and Methods: X-ray verification film was placed in a water-equivalent phantom at a depth of 4 cm, corresponding to an isocentric distance of 100 cm. A double exposure technique was used to mimic two half-beam blocked fields abutting at the central axis. Each half of the film was irradiated with 50 monitor units using a 6 MV photon beam. One of the collimators was set to an off-axis position to force a gap or overlap of the radiation fields at the isocenter in increments of 1 mm. The films were scanned with a laser densitometer with a resolution of 300 μm. The beam profiles were evaluated at the region of overdose or underdose around the match line. Results: The dose on the central axis varied linearly from - 50% (field gap of 3 mm) to + 50% (field overlap of 3 mm). Surprisingly, the width (defined as a full-width, half-maximum, FWHM) of the region of overdose or underdose around the match line is 3 mm for field gaps or overlaps of 1 and 2 mm. The width of the region is 4.5 mm for field gaps or overlaps of 3 mm. The larger than expected width of this region is due to the addition of the two abutting penumbras. Conclusion: Asymmetric collimation with half-beam blocks may overdose the spinal cord. Calibration specifications generally allow for a 1 mm tolerance in the position of each independent jaw. In a calibrated machine, this could lead to a 2 mm field overlap. A field overlap of just 1 mm results in a FWHM region of overdose measuring 3 mm with a maximum dose of 140%. To our knowledge, there are no current recommendations

Sulfidic photochemical passivation of GaAs surfaces in alcoholic solutions

International Nuclear Information System (INIS)

Simonsmeier, T.; Ivankov, A.; Bauhofer, W.

2005-01-01

We report on a remarkable enhancement of the passivation effect of sulfidic solutions through illumination with above band gap light. Luminescence measurements on GaAs surfaces which have been illuminated during chemical passivation reveal in comparison to nonilluminated samples a further reduction of their surface density of states as well as a significantly increased stability of the passivation. Investigations with photoelectron spectroscopy show that illumination leads to a nearly complete removal of oxides on the surface. Measurements on Schottky diodes which have been manufactured with photochemically passivated GaAs indicate a noticeable decrease in band bending and a depinning of the Fermi level

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Science.gov (United States)

Bhusal, L.; Freundlich, A.

2007-01-01

Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

Single-electron tunnel junction array

International Nuclear Information System (INIS)

Likharev, K.K.; Bakhvalov, N.S.; Kazacha, G.S.; Serdyukova, S.I.

1989-01-01

The authors have carried out an analysis of statics and dynamics of uniform one-dimensional arrays of ultrasmall tunnel junctions. The correlated single-electron tunneling in the junctions of the array results in its behavior qualitatively similar to that of the Josephson transmission line. In particular, external electric fields applied to the array edges can inject single-electron-charged solitons into the array interior. Shape of such soliton and character of its interactions with other solitons and the array edges are very similar to those of the Josephson vortices (sine-Gordon solitons) in the Josephson transmission line. Under certain conditions, a coherent motion of the soliton train along the array is possible, resulting in generation of narrowband SET oscillations with frequency f/sub s/ = /e where is the dc current flowing along the array

Surface science analysis of GaAs photocathodes following sustained electron beam delivery

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V. Shutthanandan

2012-06-01

Full Text Available Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power free electron lasers (FEL. Photocathode quantum efficiency degradation is due to residual gases in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include helium ion microscopy, Rutherford backscattering spectrometry (RBS, atomic force microscopy, and secondary ion mass spectrometry (SIMS. In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the continuous electron beam accelerator facility (CEBAF photoinjector and one unused, were also analyzed using transmission electron microscopy (TEM and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but show evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements, the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

Solvent-mediated self-assembly of hexadecanethiol on GaAs (0 0 1)

International Nuclear Information System (INIS)

Huang, Xiaohuan; Dubowski, Jan J.

2014-01-01

Graphical abstract: - Highlights: • Outstanding quality hexadecanethiol self-assembled monolayers (HDT SAM) produced on GaAs (0 0 1) due to the mediated role of water in an alcoholic environment. • HDT SAM formed in chloroform exhibit excellent electronic passivation properties in contrast to their structural characteristics. • Low dielectric constant solvents do not necessary provide conditions advantageous for the formation of high quality alkanethiol SAM. • Photoluminescence emitting materials allow to investigate the mechanisms of both electronic and chemical passivation and, thus, they are an excellent platform for studying the mechanisms of SAM formation on solid substrates. - Abstract: We have investigated the influence of solvents on the quality of hexadecanethiol (HDT) self-assembled monolayers (SAM) formed on GaAs (0 0 1) in chloroform, ethanol and ethanol/water 1:1 characterized by their increasing dielectric constants from 4.8 (chloroform) to 24.5 (ethanol) and water (80.1). Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) data show that the incubation in ethanol/water 1:1 solution creates conditions favouring inter-molecular interaction leading to the formation of an outstanding quality HDT SAM on GaAs (0 0 1). Incubation in low-dielectric constant solvents is not offering advantageous conditions for growing HDT SAM on GaAs. The chloroform environment, while weakening the thiol–thiol interaction, induces the oxidation of the GaAs surface and, in particular, formation of Ga 2 O 3 . This reduces the concentration of surface defects responsible for non-radiative recombination and leads to an enhanced photoluminescence emission, despite the fact that HDT SAM formed in chloroform are highly disordered, exhibiting the worst chemical passivation among the investigated samples

Single-Crystal Y2O3 Epitaxially on GaAs(001 and (111 Using Atomic Layer Deposition

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Y. H. Lin

2015-10-01

Full Text Available Single-crystal atomic-layer-deposited (ALD Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE GaAs(001-4 \\(\\times\\ 6 and GaAs(111A-2 \\(\\times\\ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \\textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are of a cubic phase and have (110 as the film normal, with the orientation relationship being determined: Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(110\\[\\(001\\][\\(\\overline{1}10\\]//GaAs(\\(001\\[\\(110\\][\\(1\\overline{1}0\\]. On GaAs(\\(111\\A, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are also of a cubic phase with (\\(111\\ as the film normal, having the orientation relationship of Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(111\\[\\(2\\overline{1}\\overline{1}\\] [\\(01\\overline{1}\\]//GaAs (\\(111\\ [\\(\\overline{2}11\\][\\(0\\overline{1}1\\]. The relevant orientation for the present/future integrated circuit platform is (\\(001\\. The ALD-Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\/GaAs(\\(001\\-4 \\(\\times\\ 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit is low of ~10\\(^{12}\\ cm\\(^{−2}\\eV\\(^{−1}\\ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\\(_{it}\\ are the lowest ever achieved among all the ALD-oxides on GaAs(\\(001\\.

Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.

Science.gov (United States)

Yang, D Z; Wang, T; Sui, W B; Si, M S; Guo, D W; Shi, Z; Wang, F C; Xue, D S

2015-09-01

We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.

Effect of H{sup +} implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region

Energy Technology Data Exchange (ETDEWEB)

Klyui, N. I.; Lozinskii, V. B., E-mail: lvb@isp.kiev.ua [Jilin University, College of Physics (China); Liptuga, A. I.; Dikusha, V. N. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Oksanych, A. P.; Kogdas’, M. G.; Perekhrest, A. L.; Pritchin, S. E. [Kremenchug National University (Ukraine)

2017-03-15

The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.

Four-junction superconducting circuit

Science.gov (United States)

Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

2016-01-01

We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Science.gov (United States)

Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

2014-12-01

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

Energy Technology Data Exchange (ETDEWEB)

He, Yunrui; Wang, Jun, E-mail: wangjun12@bupt.edu.cn; Hu, Haiyang; Wang, Qi; Huang, Yongqing; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

2015-05-18

The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Liu, H. F.; Chua, S. J.; Xiang, N.

2007-01-01

The authors investigated the growth of Al thin films on GaAs (100) substrates by molecular beam epitaxy. It is found that the growth at 550 degree sign C results in a texture that consists of (100)Al[010](parallel sign)(100)GaAs[011] and (100)Al[010](parallel sign)(100)GaAs[010] rotated 45 degree sign with respect to each other, while the growth at 300 degree sign C leads to a mixture phase of (100)Al[010](parallel sign)(100)GaAs[011] and (110)Al[001](parallel sign)(100)GaAs[011]. In situ annealing of the Al film grown at 300 degree sign C causes a reorientation of the crystalline from (100)Al[010](parallel sign)(100)GaAs[011] to (110)Al[001](parallel sign)(100)GaAs[011]. The grain sizes of the Al film are increased by the increased growth temperature and in situ annealing; the ratio of the exposed to the covered surface is not changed significantly by changing the growth temperature but decreased by annealing; and the small islands in between the large ones are removed by annealing. These observations are explained based on island migration and coalescence

Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

International Nuclear Information System (INIS)

Bietti, S; Somaschini, C; Esposito, L; Sanguinetti, S; Frigeri, C; Fedorov, A; Geelhaar, L

2014-01-01

We present the growth of self-assisted GaAs nanowires (NWs) with selectable number density on bare Si(1 1 1), not covered by the silicon oxide. We determine the number density of the NWs by initially self-assembling GaAs islands on whose top a single NW is nucleated. The number density of the initial GaAs base islands can be tuned by droplet epitaxy and the same degree of control is then transferred to the NWs. This procedure is completely performed during a single growth in an ultra-high vacuum environment and requires neither an oxide layer covering the substrate, nor any pre-patterning technique. (paper)

Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

International Nuclear Information System (INIS)

Williams, R.S.

1982-01-01

Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

Static and dynamic magnetic properties of B2 ordered Co2MnAl film epitaxially grown on GaAs

International Nuclear Information System (INIS)

Liu, Jihong; Qiao, Shuang

2015-01-01

Co 2 MnAl, considering its potential 100% spin polarization and high Curie temperature, is expected to be one of the most promising materials for realizing half metallicity. However, on the premise of high polarization, the optimization of the magnetic damping constant is directly determined the critical current density for spin torque transfer switching and also the stability of spin polarization for spin injection transfer, thus research on damping constant is also very important. In this paper, we have systematically investigated the magnetic damping constant in Co 2 MnAl film epitaxially grown on GaAs(100) substrate by FMR and TR-MOKE measurements, and found that the damping constant of 0.023 extracted by FMR is comparable with that of TR-MOKE at low field. While, considering field-dependent spin orientation, we think that the field-dependent damping constant deduced by TR-MOKE may provide important information for Co 2 MnAl/GaAs heterostructure and its potential application in spintronics. - Graphical abstract: Co 2 MnAl, considering its potential 100% spin polarization and high Curie temperature, is expected to be one of the most promising materials for realizing half metallicity. In this paper, we have successfully grown the B2-ordered Co 2 MnAl film on GaAs (100) substrate and systematically investigated the magnetic damping constant in Co 2 MnAl film epitaxially grown on GaAs(100) substrate by employing both FMR and TR-MOKE measurements. Our results show that the damping constant of 0.023 extracted by FMR is comparable with that of TR-MOKE at low field. However, considering field-dependent spin orientation, we think that the field-dependent damping constant deduced by TR-MOKE may be more useful for Co 2 MnAl/GaAs heterostructure and its possible application in spintronics. - Highlights: • B2 ordered Co 2 MnAl was successfully prepared and studied by LMOKE and ROT-MOKE. • Static magnetic measurements show clear cubic anisotropy with K C of 5.0 × 10 4

Superconducting Coset Topological Fluids in Josephson Junction Arrays

CERN Document Server

Diamantini, M C; Trugenberger, C A; Sodano, Pasquale; Trugenberger, Carlo A.

2006-01-01

We show that the superconducting ground state of planar Josephson junction arrays is a P- and T-invariant coset topological quantum fluid whose topological order is characterized by the degeneracy 2 on the torus. This new mechanism for planar superconductivity is the P- and T-invariant analogue of Laughlin's quantum Hall fluids. The T=0 insulator-superconductor quantum transition is a quantum critical point characterized by gauge fields and deconfined degrees of freedom. Experiments on toroidal Josephson junction arrays could provide the first direct evidence for topological order and superconducting quantum fluids.

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

Science.gov (United States)

Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

2018-05-01

The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

High resolution resonant Raman scattering in InP and GaAs

International Nuclear Information System (INIS)

Kernohan, E.T.M.

1996-04-01

Previous studies of III-V semiconductors using resonant Raman scattering have concentrated on measuring the variations in scattering intensity under different excitation conditions. The shape of the Raman line also contains important information, but this has usually been lost because the low signal strengths mean that resolution has been sacrificed for sensitivity. It might therefore be expected that further insights into the processes involved in Raman scattering could be obtained by using high resolution methods. In this thesis I have measured single- and multiple- phonon scattering from bulk GaAs and InP with a spectral resolution better than the intrinsic widths of the Raman lines. For scattering in the region of one longitudinal optic (LO) phonon energy, it is found that in InP the scattering in the allowed and forbidden configurations occur at different Raman shifts, above and below the zone-centre phonon energy respectively. These shifts are used to determine the scattering processes involved, and how they differ between InP and GaAs. The lineshapes obtained in multiple-phonon scattering are found to depend strongly on the excitation energy used, providing evidence for the presence of intermediate resonances. The measured spectra are used to provide information about the phonon dispersion of InP, whose dispersion it is difficult to measure in any other way, and the first evidence is found for an upward dispersion of the LO mode. Raman lineshapes are measured for InP in a magnetic field. The field alters the electronic bandstructure, leading to a series of strong resonances in the Raman efficiency due to interband magneto-optical transitions between Landau levels. This allows multiphonon processes up to sixth-order to be investigated. (author)

Plasma treatment of porous GaAs surface formed by electrochemical etching method: Characterization and properties

International Nuclear Information System (INIS)

Naddaf, M.; Saloum, S.

2008-12-01

Porous GaAs samples were formed by electrochemical anodic etching of Zn doped p-type GaAs (100) wafers at different etching parameters (time, mode of applied voltage or current and electrolyte). The effect of etching parameters and plasma surface treatment on the optical properties of the prepared sample has been investigated by using room temperature photoluminescence (PL), Raman spectroscopy and reflectance spectroscopic measurements in the range (400-800 nm). The surface morphological changes were studied by using atomic force microscope. It has been found that etching parameters can be controlled to produce a considerably low optical reflectivity porous GaAs layer, attractive for use in solar cells. In addition, it has been observed that the deposition of plasma polymerized HMDSO thin film on porous GaAs surface can be utilized to produce a surface with novel optical properties interesting for solar cells and optoelectronic devices. (author)

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

Science.gov (United States)

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

n⁺ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC.

Science.gov (United States)

Zhang, Zhiqiang; Liao, Xiaoping

2017-06-17

To achieve radio frequency (RF) power detection, gain control, and circuit protection, this paper presents n⁺ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS) power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that these sensors have reflection losses of less than -17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µ V/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µ V/mW for the sensor with the thermal slug and the back cavity, respectively.

Analysis of GAA/TTC DNA triplexes using nuclear magnetic resonance and electrospray ionization mass spectrometry.

Science.gov (United States)

Mariappan, S V Santhana; Cheng, Xun; van Breemen, Richard B; Silks, Louis A; Gupta, Goutam

2004-11-15

The formation of a GAA/TTC DNA triplex has been implicated in Friedreich's ataxia. The destabilization of GAA/TTC DNA triplexes either by pH or by binding to appropriate ligands was analyzed by nuclear magnetic resonance (NMR) and positive-ion electrospray mass spectrometry. The triplexes and duplexes were identified by changes in the NMR chemical shifts of H8, H1, H4, 15N7, and 15N4. The lowest pH at which the duplex is detectable depends upon the overall stability and the relative number of Hoogsteen C composite function G to T composite function A basepairs. A melting pH (pHm) of 7.6 was observed for the destabilization of the (GAA)2T4(TTC)2T4(CTT)2 triplex to the corresponding Watson-Crick duplex and the T4(CTT)2 overhang. The mass spectrometric analyses of (TTC)6.(GAA)6 composite function(TTC)6 triplex detected ions due to both triplex and single-stranded oligonucleotides under acidic conditions. The triplex ions disappeared completely at alkaline pH. Duplex and single strands were detectable only at neutral and alkaline pH values. Mass spectrometric analyses also showed that minor groove-binding ligands berenil, netropsin, and distamycin and the intercalating ligand acridine orange destabilize the (TTC)6.(GAA)6 composite function (TTC)6 triplex. These NMR and mass spectrometric methods may function as screening assays for the discovery of agents that destabilize GAA/TTC triplexes and as general methods for the characterization of structure, dynamics, and stability of DNA and DNA-ligand complexes.

The physical analysis on electrical junction of junctionless FET

Directory of Open Access Journals (Sweden)

Lun-Chun Chen

2017-02-01

Full Text Available We propose the concept of the electrical junction in a junctionless (JL field-effect-transistor (FET to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW junctionless poly-Si thin-film transistors are used to demonstrate this conception of the electrical junction. Though the dopant and the dosage of the source, of the drain, and of the channel are exactly the same in the JL FET, the transfer characteristics of the JL FET is similar to these of the conventional inversion-mode FET rather than these of a resistor, which is because of the electrical junction at the boundary of the gate and the drain in the JL FET. The electrical junction helps us to understand the JL FET, and also to explain the superior transfer characteristic of the JL FET with the gated raised S/D (Gout structure which reveals low drain-induced-barrier-lowering (DIBL and low breakdown voltage of ion impact ionization.

Structural and morphological TEM characterization of GaAs based nanowires

Energy Technology Data Exchange (ETDEWEB)

Soda, Marcello

2012-02-03

The question of a structural and morphological characterization of GaAs based nanowires is the research interest of this thesis. For this purpose standard and analytical transmission electron microscopy techniques were employed. New investigation methodologies are introduced in order to obtain a reliable interpretation of the results. The principal motivation on developing a new investigation method is the necessity to relate the results of crystal structure and morphology characterizations to microscopic and NW-specific parameters and not to macroscopic and general growth parameters. This allows a reliable comparison of NW characteristics and enhances the comprehension of their growth mechanism.The analysis of the results on crystal structure investigations, assuming this new perspective, delivers the fundamental finding that the axial growth of Au-assisted GaAs NWs can change in a pseudo Ga-assisted growth due to a non steady-state regime of the Ga accumulation process in the liquid droplet. The attempt to associate the observed crystal structures to one of these two growth modes reveals that zinc blende segments are most probably generated when a pseudo Ga-assisted growth occurs. This experimental evidence is in accordance with investigations developed by Glas et al. and Spirkoska et al. and with the current understanding of the NW growth mechanism and unifies the interpretation of catalytic growth of GaAs NWs. A Mn doped GaAs shell deposited at low temperature on core GaAs NWs is characterized for the first time. The growth is found to be epitaxial and to confer the quality of the core crystal to the shell crystal. As a consequence a high stacking fault density of the core NW limits the temperature of the shell growth due to the formation of clusters. Cross sections of (Ga,Mn)As shells are investigated. Simple kinetic and thermodynamical considerations lead to the conclusion of morphological instability of the low temperature radial growth. Analytical