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Sample records for fundatii si constructii

  1. Si/SiGe MMIC's

    Science.gov (United States)

    Luy, Johann-Friedrich; Strohm, Karl M.; Sasse, Hans-Eckard; Schueppen, Andreas; Buechler, Josef; Wollitzer, Michael; Gruhle, Andreas; Schaeffler, Friedrich; Guettich, Ulrich; Klaassen, Andreas

    1995-04-01

    Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper gives a survey on the state-of-the-art performance of this technology and on first applications. The key devices are IMPATT diodes for mm-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits. The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with f(sub max) values of more than 90 GHz is now used for low-noise oscillators at Ka-band frequencies. First system applications are discussed.

  2. 与Si工艺兼容的Si/SiGe/Si HBT研究%The Study of Si/SiGe/Si HBT and Its Compatibility with Si Process

    Institute of Scientific and Technical Information of China (English)

    廖小平

    2001-01-01

    我们对Si/SiGe/Si HBT及其Si兼容工艺进行了研究,在研究了一些关键的单项工艺的基础上,提出了五个高速Si/SiGe/Si HBT结构和一个低噪声Si/SiGe/Si HBT结构,并已研制成功台面结构Si/SiGe/Si HBT和低噪声Si/SiGe/Si HBT,为进一步高指标的Si/SiGe/Si HBT的研究建立了基础.

  3. Interface structure between epitaxial NiSi2 and Si

    Institute of Scientific and Technical Information of China (English)

    Wei-Long Liu; Wen-Jauh Chen; Ting-Kan Tsai; Hsun-Heng Tsai; Shu-Huei Hsieh

    2006-01-01

    The interface structure between the Si and NiSi2 epitaxially grown on the ((-1)12) Si substrate was studied using high resolution transmission electron microscopy and computer image simulation. The results showed that the interface between Si and NiSi2 epitaxially grown on the ((-1)12) Si substrate has six different types: type A NiSi2 ((-1)11 )/( (-1)11 ) Si, type A NiSi2 (001)/(001) Si, type B NiSi2 (1(-1)(-1))/(1(-1)1) Si, type B NiSi2 ((-1)12)/(1(-1)2) Si, type B NiSi2 (2(-2)1)/(001) Si, and type B NiSi2 (1(-1)(4))/( 1(-1)0 ) Si. And there are one or more different atomic structures for one type of interface.

  4. 射频 Si/SiGe/Si HBT的研究%Studies on RF Si/SiGe/Si HBT

    Institute of Scientific and Technical Information of China (English)

    廖小平; 殷刚毅

    2003-01-01

    Si/SiGe/Si HBT与Si工艺兼容的研究基础上,对射频Si/SiGe/Si HBT的射频特性和制备工艺进行了研究,分析了与器件结构有关的关键参数寄生电容和寄生电阻与Si/SiGe/Si HBT的特征频率fT和最高振荡频率fmax的关系,成功地制备了fT为2.5 GHz、fmax为2.3 GHz的射频Si/SiGe/Si HBT,为具有更好的射频性能的Si/SiGe/Si HBT的研究建立了基础.

  5. Privacy and Yin Si

    Institute of Scientific and Technical Information of China (English)

    胡迪

    2007-01-01

    <正>“Privacy” is translated as yin si in Chinese.Traditionally,in the Chinese mind,yin si is associated with something that is closed or unfair.If someone is said to have yin si,meddlers(好事者) will be attracted to pry(打探) into his or her affairs.So people always state that they don’t have yin si.

  6. Electroluminescence of Si Nanocrystal-Doped SiO2

    Institute of Scientific and Technical Information of China (English)

    CHEN Dan; XIE Zhi-Qiang; WU Qian; ZHAO You-Yuan; LU Ming

    2007-01-01

    @@ We perform a comparative study on the electroluminescence (EL) and photoluminescence (PL) of Si nanocrystaldoped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si:SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.

  7. Si/SiO2和Si/SiNx/SiO2超晶格的能带结构%Band structure of Si/SiO2 and Si/SiNx/SiO2 superlattices

    Institute of Scientific and Technical Information of China (English)

    魏屹; 董成军; 徐明

    2010-01-01

    利用Kronig-Penney模型从理论上计算了Si/SiO2和Si/Si/SiNx/SiO2多层膜结构中量子阱的能带结构,进一步分析了各亚层薄膜厚度对能带结构和有效质量的影响.结果发现,适当减少亚层的厚度都能使得纳米Si薄膜的带隙发生明显宽化.在Si/SiO2超晶格中,Si量子阱层带隙能量随着Si层厚度的变化符合EPLL(eV)=1.6+0.7/d2关系,与我们的计算结果十分吻合.在Si/SiNdSiO2超晶格系统中,可以通过控制各亚层厚度,尤其是Si和SiNx层厚度,均能够有效地控制发光.

  8. Aperiodic SiSn/Si multilayers for thermoelectric applications

    Science.gov (United States)

    Tonkikh, A. A.; Zakharov, N. D.; Eisenschmidt, C.; Leipner, H. S.; Werner, P.

    2014-04-01

    We report on novel defect-free SiSn/Si heterostructures grown pseudomorphically on Si(001) substrates using temperature-modulated molecular beam epitaxy. This approach results in a sustainable epitaxial growth for SiSn/Si multilayers. Transmission electron microscopy and electron diffraction manifest that SiSn layers possess a diamond lattice structure. X-ray diffraction reveals up to 9.5 at% Sn in the crystal lattice of SiSn layers.

  9. Prose Writer Si Yu

    Institute of Scientific and Technical Information of China (English)

    1996-01-01

    SI Yu, pen name of Zhan Shaojuan, is well known through her prose works. During the recent more than ten years, Chinese prose writing has developed rapidly, from its previous level to the present flourishing conditions. Si Yu is a distinguished woman writer, whose creative prose alternately displays either

  10. Electroluminescence from Si/SiO2 films deposited on p-Si substrates

    Institute of Scientific and Technical Information of China (English)

    马书懿; 萧勇; 陈辉

    2002-01-01

    The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a verygood rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structureat a forward bias of 5V or larger. A broad band with one peak around 650-660 nm appears in all the EL spectra ofthe structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on ELspectra are studied systematically.

  11. Influence of Si on Interfacial Combination of SiCp/Al-Mg-Si Composite

    Institute of Scientific and Technical Information of China (English)

    Han Jianmin; Li Ronghua; Li Mingwei; Cui Shihai; Li Weijing; Wang Jinhua

    2004-01-01

    The scanning electron microscopy (SEM) analysis results of Si distribution in the interface between SiC reinforcements and aluminum matrix of a stir casting SiCp/Al-Mg-Si composite were presented. Results show that there is Si precipitation deposit on the interface of the composite and Si connects with SiC reinforcements in one side and connects with aluminum matrix in the other side. Si phase plays as a connecting bridge, which contributes to the interfacial combination of SiCp/Al composite.

  12. Introduction of atomic H into Si3N4/SiO2/Si stacks

    Institute of Scientific and Technical Information of China (English)

    JIN Hao; WEBER K.J.; LI Weitang; BLAKERS A.W.

    2006-01-01

    Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defectsin the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.

  13. Electronic Structure of Si1-xIVx/Si Superlattices on Si(001)

    Institute of Scientific and Technical Information of China (English)

    CHEN Jie; L(U) Tie-Yu; HUANG Mei-Chun

    2007-01-01

    We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si1-xIVx/Si (x = 0.125, 0.25, 0.5,IV=Ge, Sn) superlattices (SLs) grown along the [001] direction on bulk Si. The present calculations reveal that the Si0.875 Ge0.125/Si, Si0.75 Ge0.25/Si and Si0.875Sn0.125/Si axe the Γ-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si1-xIVx/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.

  14. Photoelectric properties of n-SiC/n-Si heterojunctions

    Directory of Open Access Journals (Sweden)

    Semenov A. V.

    2012-10-01

    Full Text Available Photovoltaic effect in isotype heterotructure formed by nanocrystalline silicon carbide films on single crystal n-Si substrates (n-SiC/n-Si heterojunction was studied. The films were produced by direct ionic deposition method. The model that takes into account the quantum wells and potential barriers caused by band offsets was proposed to explain the current-voltage characteristics and photovoltaic properties of the heterostructure n-SiC/n-Si.

  15. Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfaces

    Science.gov (United States)

    Jang, Jin-Wook; Hayes, Scott; Lin, Jong-Kai; Frear, Darrel R.

    2004-06-01

    The dissolution behavior of Si (100) and (111) dies by eutectic AuSi solder was investigated. On the Si (100) surface, the dissolution primarily occurred by the formation of craters resulting in a rough surface. The dissolution of the Si (111) resulted in a relatively smooth surface. The morphology of the Si (100) surface during a AuSi soldering reaction exhibited more time-dependent behavior and the etching craters on a Si (100) surface grew larger with time whereas Si (111) did not significantly change. This difference was ascribed to the surface energy differences between Si (111) and (100) surfaces that resulted in the two- and three-dimensional dissolution behaviors, respectively. This difference plays an important role in the formation of voids during the AuSi die bonding. The etching craters on Si (100) act as a AuSi solder sink and the regions surrounded by etch pits tend to become voids. For Si (111), flat surfaces were observed in the voided regions. Cross section analysis showed that no solder reaction occurred in the voided region of the Si (111) surface. This suggests the possibility of the formation of a thin inert layer in a potentially voided region prior to assembly. To achieve void-free die bonding, different parameters must be adjusted to the Si (100) and Si (111) surfaces with the AuSi alloy.

  16. Correlation between Light Emissions from Amorphous-Si:H/SiO2 and nc-Si/SiO2 Multilayers

    Institute of Scientific and Technical Information of China (English)

    MA Zhong-Yuan; HUANG Xin-Fan; CHEN Kun-Ji; FENG Duan; HAN Pei-Gao; LI Wei; CHEN De-Yuan; WEI De-Yuan; QIAN Bo; LI Wei; XU Jun; XU Ling

    2007-01-01

    We investigate the properties of light emission from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4nm and the interface states are well passivated by hydrogen. For the nc-Si/SiO2 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4 nm. The role of hydrogen and oxygen is discussed in detail.

  17. A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

    Institute of Scientific and Technical Information of China (English)

    Ma Shu-Yi; Chen Hui; Xiao Yong; Ma Zi-Jun; Sun Ai-Min

    2004-01-01

    Ge/SiO2 and Si/SiO2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650-660 nm. The EL mechanisms of the structures are discussed.

  18. a-Si/c-Si heterojunction solar cells on SiSiC ceramic substrates

    Institute of Scientific and Technical Information of China (English)

    LI Xudong; XU Ying; CHE Xiaoqi

    2006-01-01

    Silicon thin-film solar cells are considered to be one of the most promising cells in the future for their potential advantages, such as low cost, high efficiency, great stability, simple processing, and none-pollution. In this paper, latest progress on poly-crystalline silicon solar cells on ceramic substrates achieved by our group was reported. Rapid thermal chemical vapor deposition (RTCVD) was used to deposited poly-crystalline silicon thin films, and the grains of as-grown film were enlarged by Zone-melting Recrystallization (ZMR). As a great changein cell's structure, traditional diffused pn homojunction was replaced by a-Si/c-Si heterojunction, which lead is to distinct improvement in cell's efficiency.A conversion efficiency of 3.42% has been achieved on 1cm2 a-Si/c-Si heterojunction solar cell ( Isc =16.93 mA, Voc =310.9 mV, FF =06493, AM =1.5 G,24 ℃), while the cell with diffused homojunction only gotan efficiency of 0.6%. It indicates that a-Si emitter formed at low temperature might be more suitable for thin film cell on ceramics.

  19. Features of Mg2Si Layer Growth in Si/Mg2Si Multilayers

    Directory of Open Access Journals (Sweden)

    L.E. Konotopskyi

    2016-06-01

    Full Text Available Features of magnesium siliced layer growth in Si/Mg2Si multilayers in initial state and after thermal annealing were studied by methods of transmission electron microscopy and X-Ray scattering. As-deposited magnesium silicide layers are amorphous with nanocrystal inclusions of metastable h-Mg2Si. Formation of Mg2Si in hexagonal modification occurs under the influence of stress produced by silicon layers. At T = 723 К Mg2Si layers finished crystallizes in hexagonal modification, with some coarsening of grains. That is accompanied with 7.3 % reduction in period of the Si/Mg2Si multilayer.

  20. Transport and electroluminescence mechanism in Au/(Si/SiO2)/P-Si film

    Institute of Scientific and Technical Information of China (English)

    ZHANG Kai-biao; MA Shu-yi; MA Zi-jun; CHEN Hai-xia

    2006-01-01

    The samples of Au/(Si/SiO2)/p-Si structure were fabricated by using the R.F magnetron sputtering technique.Its carrier transport and electroluminescence mechanism were studied from the I-V curves and EL spectra by using the Configuration Coordinate as a theoretical model.The result indicates that there are two defect centers in SiO2 films.The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.

  1. Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure

    Institute of Scientific and Technical Information of China (English)

    Liu Zhihong; Chen Changchun; Lin Huiwang; Xiong Xiaoyi; Dou Weizhi; Tsien Pei-Hsin

    2004-01-01

    UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.

  2. Oxide layer dissolution in Si/SiO{sub x}/Si wafer bonded structures

    Energy Technology Data Exchange (ETDEWEB)

    Pippel, E.; Werner, P.; Goesele, U. [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Germany); Vdovin, V. [Institute for Chemical Problems of Microelectronics, Moscow (Russian Federation); Institute of Rare Metals Giredmet, Moscow (Russian Federation); Zakharov, N.

    2009-10-15

    The evolution of the interfaces of hydrophilic-bonded Si wafers and the corresponding low-angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were investigated: Si<001>/Si<001> and Si<001>/Si<110>, where the interfaces are separated by thin native SiO2 layers. The interfaces were analysed by TEM and STEM/EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si-Si bonded interface depend very much on the lattice mismatch and on the twist angle. The velocity of the dissolution of the thin oxide layers and the formation of Si-Si bonds at the bonding interface depend on the orientation relations of the corresponding wafers. The processes of interface fusion and the dissolution of oxide layer are discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD

    Institute of Scientific and Technical Information of China (English)

    CHEN Chang-Chun; LIU Zhi-Hong; HUANG Wen-Tao; DOU Wei-Zhi; ZHANG Wei; TSIEN Pei-Hsin; ZHU De-Zhang

    2003-01-01

    Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.

  4. Si/SiGe/Si HBT的直流特性和低频噪声%Si/SiGe/Si HBT's DC Characterization and Its Low-frequency Noise

    Institute of Scientific and Technical Information of China (English)

    廖小平; 张中平

    2003-01-01

    在对Si/SiGe/Si HBT及其Si兼容工艺的研究基础上,研制成功低噪声Si/SiGe/Si HBT,测试和分析了它的直流特性和低频噪声特性,为具有更好的低噪声性能的Si/SiGe/Si HBT的研究建立了基础.

  5. Effect of Si/Si1-yCy/Si Barriers on the Characteristics of Si1-xGex/Si Resonant Tunneling Structures

    Institute of Scientific and Technical Information of China (English)

    HAN Ping; CHENG Xue-Mei; Masao Sakuraba; YoungCheon Jeong; Takashi Matsuura; Junichi Murota

    2000-01-01

    P-type double barrier resonant tunneling diodes (RTD) with the single Si0.6Ge0.4 quantum well and double Si0.6 Ge0.4 spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si1-yCy layer on the characteristics of the devices was shown by comparing the current-voltage (Ⅰ-Ⅴ) characteristics of RTD's of the barriers of Si layers with that of Si/Si1-yCy/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/Si1-yCy/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/Si1-yCy/Si barriers. The possible mechanism for the observed Ⅰ-Ⅴcharacteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si1-yCy layers in the Si/Si1-yCy/Si barriers.

  6. Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure

    Energy Technology Data Exchange (ETDEWEB)

    Di Zengfeng [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Zhang Miao [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Liu Weili [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Zhu Ming [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Lin Chenglu [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Chu, Paul K. [Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk

    2005-12-05

    An improved technique is demonstrated to fabricate silicon-germanium on insulator (SGOI) starting with a sandwiched structure of Si/SiGe/Si. After oxidation of the sandwiched structure and successive annealing, a relaxed SiGe-on-insulator (SGOI) structure is produced. Our results indicate that the added Si cap layer is advantageous in suppressing Ge loss at the initial stage of SiGe oxidation and the subsequent annealing process homogenizes the Ge fraction. Raman measurements reveal that the strain in the SiGe layer is fully relaxed at high oxidation temperature ({approx}1150 deg. C) without generating any threading dislocations and crosshatch patterns, which generally exist in the relaxed SiGe layer on bulk Si substrate.

  7. Endotaxial Si nanolines in Si(001):H

    Science.gov (United States)

    Bianco, F.; Owen, J. H. G.; Köster, S. A.; Mazur, D.; Renner, Ch.; Bowler, D. R.

    2011-07-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect-free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunneling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long-sought-after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  8. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  9. Annealing Behavior of Si1-xGex/Si Heterostructures

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The behavior of Si1-xGex/Si heterostructures under different annealing conditions has been studied. It is found that while RTA treatment diminishes the point defects, it introduces the misfit dislocations into Si1-xGex layers at same time. Higher annealing temperature will result in the propagation of misfit dislocations and then the total destruction of the crystal quality.

  10. Si nanoparticle interfaces in Si/SiO solar cell materials

    DEFF Research Database (Denmark)

    Kilpeläinen, S.; Kujala, J.; Tuomisto, F.

    2013-01-01

    Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One...... of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from...

  11. Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiNx/nc-Si/a-SiNx Structures

    Institute of Scientific and Technical Information of China (English)

    WANG Xiang; HUANG Jian; ZHANG Xian-Gao; DING Hong-Lin; YU Lin-Wei; HUANG Xin-Fan; LI Wei; XU Jun; CHEN Kun-Ji

    2008-01-01

    @@ The a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layers are 3nm and 20nm,respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures.Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage (C- V) hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample.

  12. Helimagnetic order in bulk MnSi and CoSi/MnSi superlattices

    Science.gov (United States)

    Loh, G. C.; Khoo, K. H.; Gan, C. K.

    2017-01-01

    Skyrmions are nanoscopic whirls of spins that reside in chiral magnets. It is only fairly recent that a plethora of applications for these quasiparticles emerges, especially in data storage. On the other hand, spin spirals are the periodic analogs of skyrmions, and are equally imperative in the course of exploration to enhance our understanding of helimagnetism. In this study, a new infrastructure based on the B20 compound, MnSi is propounded as a hosting material for spin spirals; alternating thin layers of CoSi and MnSi in the superlattice form provides a facile way of varying the properties of the spin spirals across a continuum. Using first-principles calculations based on full-potential linearized augmented plane-wave (FLAPW)-based density functional theory (DFT), the spin order of bulk MnSi, MnSi film, and the CoSi/MnSi superlattice is investigated. Spin dispersion plots as a function of propagation vectors show that the spiral size changes in the presence of CoSi - we find that the size of the spiral is reduced in the superlattice with thin CoSi layers (CoSi:MnSi=1:1 thickness ratio), whilst at a larger CoSi:MnSi=2:1 thickness ratio, the material behaves as a ferromagnet. In a similar fashion, the spin moment and orbital occupancy depend significantly on the thickness of the CoSi layers. However, the exchange interaction between Mn atoms appears to be generally impervious to the presence of CoSi. Succinctly, the CoSi/MnSi superlattice could be an excellent functional material in data storage applications.

  13. Photoluminescence from SiO sub 2 /Si/SiO sub 2 structures

    CERN Document Server

    Photopoulos, P

    2003-01-01

    Si layers were developed on pre-oxidized Si wafers by decomposition of silane in a low pressure chemical vapour deposition reactor. By keeping the deposition time constant (2 min) three sets of samples were fabricated at deposition temperatures equal to 580, 610 and 625 deg C. The deposited Si layers were thinned by high temperature dry oxidation thus forming SiO sub 2 /Si/SiO sub 2 structures. Room temperature photoluminescence (PL) measurements showed that for those samples in which the thickness of the remaining Si layer was greater than approx 6 nm, the spectra exhibited a peak at approx 650 nm. Prolonged oxidations led to the formation of SiO sub 2 /nanocrystalline-Si/SiO sub 2 structures in which the thickness of the remaining nanocrystalline Si (nc-Si) layer was smaller than 3 nm. The PL spectra obtained from these structures were at least ten times stronger compared to the previous ones. The PL peak wavelength exhibited a weak dependence on the nc-Si layer thickness shifting from 800 to 720 nm for nc-...

  14. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  15. Quantum devices using SiGe/Si heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Karunasiri, R.P.G.; Wang, K.L. (Univ. of California, Los Angeles (United States))

    Strained-layer Si{sub 1-x}Ge{sub x}/Si heterostructures have created a great deal of interest due to the potential of integration with the conventional silicon very large scale integrated technology. With the current advances in silicon molecular beam epitaxy (Si-MBE) and other low-temperature epitaxial techniques, many Si{sub 1-x}Ge{sub x}/Si heterojunction devices have been realized. For example, among those realized are avalanche photodiodes, modulation-doped field-effect transistors, heterojunction bipolar transistors, and more recently, resonant tunneling structures, hot-carrier transistors, and quantum well metal-oxide-semiconductor field-effect transistors. In this paper several quantum size effects in strained Si{sub 1-x}Ge{sub x} layers and their potential in device applications will be reviewed. Among those to be discussed are resonant tunneling, miniband transport, and intersubband absorption in Si{sub 1-x}Ge{sub x}/Si superlattice structures, optical properties of monolayer Si{sub m}Ge{sub n} superlattices, and observation of large Stark effect associated with interband transition between quantized states in Si{sub 1-x}Ge{sub x}/Si quantum well structures.

  16. Highly sensitive NIR PtSi/Si-nanostructure detectors

    Science.gov (United States)

    Li, Hua-gao; Guo, Pei; Yuan, An-bo; Long, Fei; Li, Rui-zhi; Li, Ping; Li, Yi

    2016-10-01

    We report a high external quantum efficiency (EQE) photodiode detector with PtSi/Si-nanostructures. Black silicon nanostructures were fabricated by metal-assist chemical etching (MCE), a 2 nm Pt layer was subsequently deposited on black silicon surface by DC magnetron sputtering system, and PtSi/Si-nanostructures were formed in vacuum annealing at 450 oC for 5 min. As the PtSi/Si-nanostructures presented a spiky shape, the absorption of incident light was remarkably enhanced for the repeat reflection and absorption. The breakdown voltage, dark current, threshold voltage and responsivity of the device were investigated to evaluate the performance of the PtSi/Si-nanostructures detector. The threshold voltage and dark currents of the PtSi/Si-nanostructure photodiode tends to be slightly higher than those of the standard diodes. The breakdown voltage remarkably was reduced because of existing avalanche breakdown in PtSi/Si-nanostructures. However, the photodiodes had high response at room temperature in near infrared region. At -5 V reverse bias voltage, the responsivity was 0.72 A/W in 1064 nm wavelength, and the EQE was 83.9%. By increasing the reverse bias voltage, the responsivity increased. At -60 V reverse bias voltage, the responsivity was 3.5 A/W, and the EQE was 407.5%, which means the quantum efficiency of PtSi/Si-nanostructure photodiodes was about 10 times higher than that of a standard diode. Future research includes how to apply this technology to enhance the NIR sensitivity of image sensors, such as Charge Coupled Devices (CCD).

  17. SiC-Si interfacial thermal and mechanical properties of reaction bonded SiC/Si ceramic composites

    Science.gov (United States)

    Hsu, Chun-Yen; Deng, Fei; Karandikar, Prashant; Ni, Chaoying

    Reaction bonded SiC/Si (RBSC) ceramic composites are broadly utilized in military, semiconductor and aerospace industries. RBSC affords advanced specific stiffness, hardness and thermal. Interface is a key region that has to be considered when working with any composites. Both thermal and mechanical behaviors of the RBSC are highly dependent on the SiC-Si interface. The SiC-Si interface had been found to act as a thermal barrier in restricting heat transferring at room temperature and to govern the energy absorption ability of the RBSC. However, up to present, the role of the SiC-Si interface to transport heat at higher temperatures and the interfacial properties in the nanoscale have not been established. This study focuses on these critically important subjects to explore scientific phenomena and underlying mechanisms. The RBSC thermal conductivity with volume percentages of SiC at 80 and 90 vol% was measured up to 1,200 °C, and was found to decrease for both samples with increasing environmental temperature. The RBSC with 90 vol% SiC has a higher thermal conductivity than that of the 80 vol%; however, is still significantly lower than that of the SiC. The interfacial thermal barrier effect was found to decrease at higher temperatures close 1200 °C. A custom-made in-situ tensile testing device which can be accommodated inside a ZEISS Auriga 60 FIB/SEM has been setup successfully. The SiC-Si interfacial bonding strength was measured at 98 MPa. The observation and analysis of crack propagation along the SiC-Si interface was achieved with in-situ TEM.

  18. Radiation-induced plasmons in Si-SiO2

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    The first level plasmons of Si in the pure Si state (corresponding to bonding energy (BE) of 116.95 eV) and in the SiO2 state (corresponding to BE of 122.0 eV) of Si-SiO2 prepared by irradiation hard and soft processing were studied with XPS before and after 60Co radiation.The experimental results indicate thatthere was an interface consisting of the two plasmons,this interface was extended by 60Co radiation, the fractions of the plasmon for Si in the Si-SiO2 werechanged with the variation of radiation dosage,the difference of the change in fraction of plasmonsfor the two kinds of samples was that the soft variedfaster than hard, the change of concentrations inplasmons for both hard and soft Si-SiO2 irradiatedin positive bias field were greater than that in bias-free field.The experimental results are explained from the view point of energy absorbed in form of quantization.

  19. Comparison of thermoelectric properties of nanostructured Mg2Si, FeSi2, SiGe, and nanocomposites of SiGe–Mg2Si, SiGe–FeSi2

    Directory of Open Access Journals (Sweden)

    Amin Nozariasbmarz

    2016-10-01

    Full Text Available Thermoelectric properties of nanostructured FeSi2, Mg2Si, and SiGe are compared with their nanocomposites of SiGe–Mg2Si and SiGe–FeSi2. It was found that the addition of silicide nanoinclusions to SiGe alloy maintained or increased the power factor while further reduced the thermal conductivity compared to the nanostructured single-phase SiGe alloy. This resulted in ZT enhancement of Si0.88Ge0.12–FeSi2 by ∼30% over the broad temperature range of 500-950 °C compared to the conventional Si0.80Ge0.20 alloy. The Si0.88Ge0.12–Mg2Si nanocomposite showed constantly increasing ZT versus temperature up to 950 °C (highest measured temperature reaching ZT ∼ 1.3. These results confirm the concept of silicide nanoparticle-in-SiGe-alloy proposed earlier by Mingo et al. [Nano Lett. 9, 711–715 (2009].

  20. Thermal conductivity/diffusivity of SiC-Mullite and SiC-SiC composites

    OpenAIRE

    1987-01-01

    The purposes of this study were to determine as a function of temperature the thermal diffusivity and/or thermal conductivity of SiC-Mullite and SiC-SiC, and to explain the observed behavior in terms of changes in temperature, microstructure, composition, and/or orientation. Materials used in the SiC-Mullite study consisted of single crystal SiC whiskers (prepared from rice hulls or by the vapor-liquid-solid process) dispersed within a polycrystalline mullite matrix. Dur...

  1. Visible photoluminescence related to Si precipitates in Si[sup +]-implanted SiO[sub 2

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu-Iwayama, Tsutomu; Ohshima, Mitsutoshi; Niimi, Tetsuji (Aichi Univ. of Education (Japan). Dept. of Materials Science); Nakao, Setsuo; Saitoh, Kazuo (Government Industrial Research Inst., Nagoya (Japan)); Fujita, Tetsuo (Shizuoka Inst. of Science and Technology (Japan)); Itoh, Noriaki (Nagoya Univ. (Japan). Dept. of Physics)

    1993-08-02

    We have investigated visible photoluminescence from Si[sup +]-implanted SiO[sub 2]. It is found that a luminescence band observed around 2.0 eV in as-implanted specimens disappears on annealing to 500[sup o]C and then a band around 1.7 eV appears on annealing to 1100[sup o]C. We discuss the origin of the luminescence bands in terms of the defects in SiO[sub 2] and the Si nanocrystals grown in SiO[sub 2]. (author).

  2. DESIGN AND FABRICATION OF Si/SiGe PMOSFETs

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Based on theoretical analysis and computer-aided simulation, optimized design prin-ciples for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials, determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage.In the light of these principles, a SiGe PMOSFET is designed and fabricated successfully.Measurement indicates that the SiGe PMOSFET's(L=2μ同洒45 mS/mm(300K) and 92 mS/mm(77K) ,while that is 33mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.

  3. DESIGN AND FABRICATION OF Si/SiGe PMOSFETs

    Institute of Scientific and Technical Information of China (English)

    Yang Peifeng; Zhang Jing; Yi Qiang; Fan Zerui; Li Jingchun; Yu Qi; Wang Xiangzhan; Yang Mohua; He Lin; Li Kaicheng; Tan Kaizhou; Liu Daoguang

    2002-01-01

    Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage. In the light of these principles,a SiGe PMOSFET is designed and fabricated successfully. Measurement indicates that the SiGe PMOSFET's (L=2μm) transconductance is 45 mS/mm (300K) and 92mS/mm (77K), while that is 33 mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.

  4. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  5. An efficient Si light-emitting diode based on an n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure.

    Science.gov (United States)

    Sun, Edward; Su, Fu-Hsiang; Shih, Ying-Tsang; Tsai, Hung-Ling; Chen, Ching-Huang; Wu, Mong-Kai; Yang, Jer-Ren; Chen, Miin-Jang

    2009-11-04

    Si nanocrystals embedded in a SiO2 matrix and an n-type Al-doped ZnO (ZnO:Al) layer were applied to improve the external quantum efficiency from Si in n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterojunction light-emitting diodes (LEDs). The Si nanocrystals were grown by low pressure chemical vapor deposition and the ZnO:Al layer was prepared by atomic layer deposition. The n-type ZnO:Al layer acts as an electron injection layer, a transparent conductive window, and an anti-reflection coating to increase the light extraction efficiency. Owing to the spatial confinement of carriers and surface passivation by the surrounding SiO2, the Si nanocrystals embedded in the SiO2 matrix lead to a significant enhancement of the light emission efficiency from Si. An external quantum efficiency up to 4.3 x 10(-4) at the wavelength corresponding to the indirect bandgap of Si was achieved at room temperature.

  6. Miscibility of NiSi{sub 2}, FeSi{sub 2} and Cu{sub 3}Si

    Energy Technology Data Exchange (ETDEWEB)

    Langkau, Sabine [IMKM, Universitaet Leipzig, Scharnhorststr. 20, 04275 Leipzig (Germany)], E-mail: Langkau@rz.uni-leipzig.de; Heuer, Matthias [BerlinSolar GmbH, Magnusstrasse 11, 12489 Berlin (Germany); Hoebler, Hans-Joachim; Bente, Klaus; Kloess, Gert [IMKM, Universitaet Leipzig, Scharnhorststr. 20, 04275 Leipzig (Germany)

    2009-04-17

    Ternary and quaternary chemical composition ranges of the phases NiSi{sub 2}, FeSi{sub 2}, Cu{sub 3}Si, NiSi and FeSi were determined using electron-microprobe-measurements. The system NiSi{sub 2}-Cu{sub 3}Si was found to be eutectic and most probably quasi-binary. Furthermore lattice constants of NiSi{sub 2} and Ni{sub 0.62}Fe{sub 0.41}Si{sub 1.98} were determined by means of X-ray diffraction (XRD)

  7. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  8. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1995-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method has the potential to facilitate the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent efforts have focused on transferring the joining technology to industry. Several industrial partners have been identified and collaborative research projects are in progress. Investigations are focusing on applying the joining method to sintered a-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  9. Methods of radiation effects evaluation of SiC/SiC composite and SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. Several methods for radiation effects evaluation of SiC fibers and fiber-reinforced SiC/SiC composite are presented.

  10. Al versus Si competition in FeSiAl alloys

    Energy Technology Data Exchange (ETDEWEB)

    Legarra, E. [Dpto. Electricidad y Electronica, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco (UPV/EHU), CP 644, 48080 Bilbao (Spain)], E-mail: estibaliz.legarra@ehu.es; Apinaniz, E. [Dpto. Fisica Aplicada I, Escuela de Ingenieria Tecnica Superior, Universidad del Pais Vasco, Alameda de Urquijo s/n 48013 Bilbao (Spain); Plazaola, F. [Dpto. Electricidad y Electronica, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco (UPV/EHU), CP 644, 48080 Bilbao (Spain); Jimenez, J.A. [Centro Nacional de Investigaciones Metalurgicas (CENIM), Avda. Gregorio del amo 8, 28040 Madrid (Spain); Pierna, A.R. [Chemical Engineering and Environmental Department, UPV/EHU, Box 1379, 20008 San Sebastian (Spain)

    2008-10-15

    In FeSiAl alloys, when Si substitutes for Al, important changes take place in the magnetism as well as in the structural properties. Alloys in the two composition series Fe{sub 75}Al{sub 25-x}Si{sub x} (x=0, 7.5, 12.5, 17.5, 25) and Fe{sub 70}Al{sub 30-x}Si{sub x} (x=0, 9, 15, 21, 30) were prepared by induction melting; afterwards they were crushed and then annealed in order to recover the DO{sub 3} stable phase. The deformed FeAl samples show larger lattice parameters than the ordered ones; however, this difference ({delta}a) decreases when Si substitutes for Al until it becomes zero (i.e. until the ordered samples and the deformed ones have the same lattice parameters). This trend is the same for both sample series and does not depend on the Fe content of the alloy. However, the magnetization has a different behaviour depending on the Fe content. For deformed Fe{sub 75}Al{sub 25-x}Si{sub x} alloys the saturation magnetization decreases with increasing Si content while for Fe{sub 70}Al{sub 30-x}Si{sub x} deformed alloys the saturation magnetization has a plateau in which the saturation magnetization values do not vary.

  11. SI and Non-SI Units of Concentration: A Truce?

    Science.gov (United States)

    Rich, Ronald L.

    1986-01-01

    Questions the current usage of the International System of Units (called SI units) in representing chemical notation and terminology. Suggests several additions to the system that relate to concentrations. Outlines new symbols for distinguishing between "concentration" and "molality." Includes tables to illustrate the proposed SI units. (TW)

  12. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  13. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  14. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells

    Science.gov (United States)

    Moustafa Bouzaki, Mohammed; Aillerie, Michel; Ould Saad Hamady, Sidi; Chadel, Meriem; Benyoucef, Boumediene

    2016-10-01

    We analyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about 3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 μm which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications.

  15. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  16. Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Younghyun, E-mail: yhkim@mosfet.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Takenaka, Mitsuru [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Osada, Takenori; Hata, Masahiko [Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-04-30

    We have characterized photonic-wire waveguides with Si/SiGe/Si heterostructure ribs for Si-based optical modulators. The Si (80 nm)/Si{sub 0.72}Ge{sub 0.28} (40 nm) layers grown on Si-on-insulator by molecular beam epitaxy for optical modulators were evaluated by in-situ reflection high-energy electron diffraction, atomic force microscope, X-ray diffraction and Raman spectroscopy, exhibiting that the fully-strained highly-crystalline SiGe layer was obtained. We have evaluated the propagation loss of the Si/strained SiGe/Si photonic-wire waveguides. The wavelength dependence of the propagation loss exhibits the bandgap narrowing of the strained Si{sub 0.72}Ge{sub 0.28}, while the optical absorption of the strained Si{sub 0.72}Ge{sub 0.28} is not significant for the optical modulator application at 1.55-μm wavelength. - Highlights: • We have characterized photonic-wire waveguides with Si/SiGe/Si heterostructure ribs. • The Si/Si{sub 0.72}Ge{sub 0.28} grown on Si-on-insulator were evaluated to be fully strained. • We have fabricated and evaluated the Si/strained SiGe/Si photonic-wire waveguides. • The wavelength dependence exhibits bandgap narrowing of the strained Si{sub 0.72}Ge{sub 0.28}. • Optical absorption of the SiGe is not significant for optical modulators at 1.55 μm.

  17. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: Jifeng.Liu@Dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2012-02-01

    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  18. Si Isotopes of Brownleeite

    Science.gov (United States)

    Nakamura-Messenger, K.; Messenger, Scott R.; Ito, M.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Tatsuoka, H.; Zolensky, M. E.; Tatsuoka, H.

    2010-01-01

    Brownleeite is a manganese silicide, ideally stoichiometric MnSi, not previously observed in nature until its discovery within an interplanetary dust particle (IDP) that likely originated from a comet [1]. Three discrete brownleeite grains in the IDP L2055 I3 (4 microns in size, hereafter IDP I3) were identified with maximum dimensions of 100, 250 and 600 nm and fully analyzed using scanning-transmission electron microscopy (STEM) [1]. One of the grains (100 nm in size) was poikilitically enclosed by low-Fe, Mn-enriched (LIME) olivine. LIME olivine is epitaxial to the brownleeite with the brownleeite (200) parallel to the olivine c* [1]. LIME olivine is an enigmatic phase first reported from chondritic porous IDPs and some unequilibrated ordinary chondrites [ 2], that is commonly observed in chondritic-porous IDPs. Recently, LIME olivine has been also found in comet Wild-2 (Stardust) samples [3], indicating that LIME olivine is a common mineral component of comets. LIME olivine has been proposed to form as a high temperature condensate in the protosolar nebula [2]. Brownleeite grains also likely formed as high-temperature condensates either in the early Solar System or in the outflow of an evolved star or supernova explosion [1]. The isotopic composition of the brownleeite grains may strongly constrain their ultimate source. To test this hypothesis, we performed isotopic analyses of the brownleeite and the associated LIME olivine, using the NASA/JSC NanoSIMS 50L ion microprobe.

  19. Formation of extended defects in SiGe/Si heterostructures with SiGeC intermediate layers

    Energy Technology Data Exchange (ETDEWEB)

    Vdovin, V.I.; Reznik, V.Ya. [Institute for Chemical Problems of Microelectronics, Moscow (Russian Federation); Torack, T.A.; Fei, Lu [MEMC Inc, St Peters, MO (United States); Mil' vidskii, M.G. [Institute of Rare Metals ' Giredmet' , Moscow (Russian Federation); Falster, R. [MEMC Electronic Materials SpA, Novara (Italy)

    2007-07-01

    The generation of misfit dislocations (MDs) and stacking faults (SFs) was studied by TEM and preferential chemical etching in multilayer Si(001)/SiGe/SiGeC(10 nm)/SiGe/Si heterostructures grown by CVD at 650 C. Prior to growth of Si layer, the other part of heterostructure was annealed at 950 C in the growth chamber to get relaxed buffer layers and strained Si layer free of extended defects. We used SiGe alloys with Ge content of 24 at.% and C content of 0.5 at.%. Carbon in the strained SiGe matrix was found to promote high rates of strain relaxation through the nucleation of perfect dislocation loops close to the interface with Si substrate. For Si layer thickness >10 nm, threading dislocations split in these layers under tensile strain to form SFs. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer

    Institute of Scientific and Technical Information of China (English)

    Liu Xiang; Liu Hui

    2011-01-01

    We have investigated a SiO2/SiNx/SiO2 composite insulation layer structured gate dielectric for an organic thin film transistor (OTFT) with the purpose of improving the performance of the SiO2 gate insulator.The SiO2/SiNx/SiO2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2 insulation layer device,the SiO2/SiNx/SiO2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.

  1. Study of New Way about Si/Si Bonding

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%, and the bond strength is above 2156 Pa. By doping the same kind of dopant with low-resistance in Ge, the stress compensation was realized.

  2. Formation of microtubes from strained SiGe/Si heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Qin, H [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Shaji, N [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Merrill, N E [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Kim, H S [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Toonen, R C [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Blick, R H [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Roberts, M M [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 (United States); Savage, D E [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 (United States); Lagally, M G [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 (United States); Celler, G [SOITEC USA Inc., 2 Centennial Drive, Peabody, MA 01960 (United States)

    2005-11-15

    We report the formation of micrometre-sized SiGe/Si tubes by releasing strained SiGe/Si bilayers from substrates in a wet chemical-etching process. In order to explore statistical studies of dynamic formation of microtubes, we fabricated arrays of square bilayers. Due to the dynamic change in curvature of the bilayers, and hence the underlying etch channels, the etching process deviates from a transport-controlled regime to one of kinetic controlled. We identified two distinct modes of etching. A slow etching mode is associated with symmetric surface deformation in which the bilayers mostly retain their initial pattern. In the fast mode, bilayers are asymmetrically deformed while large etch channels are induced and etching becomes kinetically controlled. Etch rate dispersion is directly related to the degree of asymmetry in surface deformation. When the dimensions of the bilayers become significantly larger than the curvature radius, kinetic etching dominates. During the formation of tubes, SiGe/Si bilayers strongly interact with the liquid environment of etchant and solvent. Assisted by the surface tension of evaporating liquids, the tubes are drawn near the substrate and eventually fixed to it because of van der Waals forces. Our study illuminates the dynamic etching and curling processes involved with and provides insight on how a uniform etch rate and consistent curling directions can be maintained.

  3. Formation of microtubes from strained SiGe/Si heterostructures

    Science.gov (United States)

    Qin, H.; Shaji, N.; Merrill, N. E.; Kim, H. S.; Toonen, R. C.; Blick, R. H.; Roberts, M. M.; Savage, D. E.; Lagally, M. G.; Celler, G.

    2005-11-01

    We report the formation of micrometre-sized SiGe/Si tubes by releasing strained SiGe/Si bilayers from substrates in a wet chemical-etching process. In order to explore statistical studies of dynamic formation of microtubes, we fabricated arrays of square bilayers. Due to the dynamic change in curvature of the bilayers, and hence the underlying etch channels, the etching process deviates from a transport-controlled regime to one of kinetic controlled. We identified two distinct modes of etching. A slow etching mode is associated with symmetric surface deformation in which the bilayers mostly retain their initial pattern. In the fast mode, bilayers are asymmetrically deformed while large etch channels are induced and etching becomes kinetically controlled. Etch rate dispersion is directly related to the degree of asymmetry in surface deformation. When the dimensions of the bilayers become significantly larger than the curvature radius, kinetic etching dominates. During the formation of tubes, SiGe/Si bilayers strongly interact with the liquid environment of etchant and solvent. Assisted by the surface tension of evaporating liquids, the tubes are drawn near the substrate and eventually fixed to it because of van der Waals forces. Our study illuminates the dynamic etching and curling processes involved with and provides insight on how a uniform etch rate and consistent curling directions can be maintained.

  4. The origin of blue photoluminescence from nc-Si/SiO2 multilayers

    Institute of Scientific and Technical Information of China (English)

    Ma Zhong-Yuan; Xu Ling; Huang Xin-Fan; Chen Kun-Ji; Feng Duan; Guo Si-Hua; Chen De-Yuan; Wei De-Yuan; Yao Yao; Zhou Jiang; Huang Rui; Li Wei; Xu Jun

    2008-01-01

    Intensive blue photoluminescence (PL) was observed at room temperature from the nanocrystalline-Si/SiO2 (ncSi/SiO2) multilayers (MLs) obtained by thermal annealing of SiO/SiO2 MLs for the first time.By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm,the PL peak blueshifts from 457 to 411 nm.Combining the analysis of TEM,Raman and absorption measurement,this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO2.

  5. SiC/Si's CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIP IN SiCp/Al-Si COMPOSITES%SiCp/Al-Si复合材料中SiC/Si的晶体学位向关系

    Institute of Scientific and Technical Information of China (English)

    隋贤栋; 罗承萍; 欧阳柳章; 骆灼旋

    2000-01-01

    用TEM研究了离心铸造和挤压铸造的SiCp/ZL109复合材料,发现Si优先在SiC表面上形核、长大,并形成大量"界面Si"及SiC/Si界面.SiC与Si之间不存在固定的晶体学位向关系,但存在(1101)sic//(111)si,[1120]sic∥[112]si优先出现的位向关系,而(0001)sic∥(111)si不是优先出现的位向关系.

  6. Dimensionless Units in the SI

    CERN Document Server

    Mohr, Peter J

    2014-01-01

    The International System of Units (SI) is supposed to be coherent. That is, when a combination of units is replaced by an equivalent unit, there is no additional numerical factor. Here we consider dimensionless units as defined in the SI, {\\it e.g.} angular units like radians or steradians and counting units like radioactive decays or molecules. We show that an incoherence may arise when different units of this type are replaced by a single dimensionless unit, the unit "one", and suggest how to properly include such units into the SI in order to remove the incoherence. In particular, we argue that the radian is the appropriate coherent unit for angles and that hertz is not a coherent unit in the SI. We also discuss how including angular and counting units affects the fundamental constants.

  7. THE STRUCTURE OF LIQUID LI-SI ALLOYS

    NARCIS (Netherlands)

    DEJONG, PHK; VERKERK, P; VANDERLUGT, W; DEGRAAF, LA

    1993-01-01

    The reverse Monte Carlo method is used to analyse neutron diffraction data on liquid Li65Si35. A well defined Si-Si partial pair correlation function is obtained with strong indications for covalent Si-Si bonds. It is also clear that most of the Si4 stars and Si5 rings occurring in solid Li12Si7 hav

  8. SEMICONDUCTOR MATERIALS Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions

    Science.gov (United States)

    Xiaopeng, Wu; Xiaoqing, Chen; Lijie, Sun; Shun, Mao; Zhuxi, Fu

    2010-10-01

    A series of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering. Their structural properties, I—V curves, photovoltaic effects and photo-response spectra were studied. The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated. It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction. The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/n-SiC/p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing. It shows that the photoresponse of n-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si. There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.

  9. SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

  10. Ionic S(N)i-Si Nucleophilic Substitution in N-Methylaniline-Induced Si-Si Bond Cleavages of Si2Cl6.

    Science.gov (United States)

    Zhang, Jie; Xie, Ju; Lee, Myong Euy; Zhang, Lin; Zuo, Yujing; Feng, Shengyu

    2016-03-24

    N-Methylaniline-induced Si-Si bond cleavage of Si2Cl6 has been theoretically studied. All calculations were performed by using DFT at the MPWB1K/6-311++G(3df,2p)//MPWB1K/6-31+G(d,p) levels. An ionic SN i-Si nucleophilic substitution mechanism, which is a newly found nucleophilic substitution in silicon-containing compounds, is proposed in the N-methylaniline-induced Si-Si bond cleavage in Si2Cl6. Unlike general S(N)i-Si nucleophilic substitutions that go through a pentacoordinated silicon transition state, ionic nucleophilic substitution goes through a tetracoordinated silicon transition state, in which the Si-Si bond is broken and siliconium ions are formed. Special cleavage of the Si-Si bond is presumably due to the good bonding strength between Si and N atoms, which leads to polarization of the Si-Si bond and eventually to heterolytic cleavage. Calculation results show that, in excess N-methylaniline, the final products of the reaction, including (NMePh)(3-n) SiHCl(n) (n=0-2) and (NMePh)(4-n) SiCl(n) (n=2-3), are the Si-Si cleavage products of Si2Cl6 and the corresponding amination products of the former. The ionic S(N)i-Si nucleophilic substitution mechanism can also be employed to describe the amination of chlorosilane by N-methylaniline. The suggested mechanisms are consistent with experimental data.

  11. An Introduction to the New SI

    Science.gov (United States)

    Knotts, Sandra; Mohr, Peter J.; Phillips, William D.

    2017-01-01

    Plans are under way to redefine the International System of Units (SI) around 2018. The new SI specifies the values of certain physical constants to define units. This article explains the new SI in order to provide a resource for high school teachers as well as for advanced students already familiar with the pre-2018 SI.

  12. An Introduction to the New SI

    Science.gov (United States)

    Knotts, Sandra; Mohr, Peter J.; Phillips, William D.

    2017-01-01

    Plans are under way to redefine the International System of Units (SI) around 2018. The new SI specifies the values of certain physical constants to define units. This article explains the new SI in order to provide a resource for high school teachers as well as for advanced students already familiar with the pre-2018 SI.

  13. Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys.

    Science.gov (United States)

    Li, Jiehua; Hage, Fredrik S; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

    2016-04-28

    The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP 'patch' dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption.

  14. Quantum wells based on Si/SiO{sub x} stacks for nanostructured absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Berghoff, B.; Suckow, S.; Roelver, R.; Spangenberg, B.; Kurz, H. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Sologubenko, A.; Mayer, J. [Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstr. 55, 52074 Aachen (Germany); Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich, 52426 Juelich (Germany)

    2010-11-15

    We report on electrical transport and quantum confinement in thermally annealed Si/SiO{sub x} multiple quantum well (QW) stacks. Results are correlated with the morphology of the stacks. High temperature annealing of Si/SiO{sub x} stacks leads to precipitation of excess Si from the SiO{sub x} layers, which enhances the degree of crystallization and increases the grain sizes in the Si QWs compared to the conventional Si/SiO{sub 2} system. Moreover, the excess Si forms highly conductive pathways between adjacent Si QWs that are separated by ultrathin silicon oxide barriers. This results in an increase of conductivity by up to 10 orders of magnitude compared to the tunneling dominated transport in Si/SiO{sub 2} stacks. The stacks exhibit a distinct quantum confinement as confirmed by photoluminescence measurements. (author)

  15. Si/SiGe/Si HBT直流特性的可靠性%Reliability of DC characteristics in mesa Si/SiGe/Si HBT

    Institute of Scientific and Technical Information of China (English)

    崔福现; 张万荣

    2003-01-01

    对单台面SiGe HBT在E-B结反偏应力下直流特性的可靠性进行了研究.研究结果表明,随应力时间的增加,开启电压增加,直流电流增益下降,特别是在低E-B正偏电压时下降明显;而交流电流增益退化缓慢.

  16. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  17. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  18. Reactive diffusion bonding of SiCp/Al composites by insert layers of mixed Al-Si and Al-Si-SiC powders

    Institute of Scientific and Technical Information of China (English)

    Jihua Huang; Yueling Dong; Yun Wan; Jiangang Zhang; Hua Zhang

    2005-01-01

    Mixed Al-Si and Al-Si-SiC powders were employed as insert layers to reactive diffusion bond SiCp/6063 MMC (metal matrix composites). The results show that SiCp/6063 MMC joints bonded by the insert layer of the mixed Al-Si powder have a dense joining layer with a typical hypoeutectic microstructure. Using the mixed Al-Si-SiC powder as the insert layer, SiCp/6063 MMC can be reactive diffusion bonded by a composite joint. Because of the SiC segregation, however, there are a number of porous zones in the joining layer, which results in the bad shear strength of the joints reactive diffusion bonded by the insert layer of the mixed Al-SiSiC powder, even lower than that of the joints reactive diffusion bonded by the insert layer of the mixed Al-Si powder. Ti and Mg added in the insert layers obviously improve the strength of the joints reactive diffusion bonded by the insert layer of the mixed AlSi-SiC powder, especially, Mg has a more obvious effect.

  19. Si{endash}N linkage in ultrabright, ultrasmall Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Rogozhina, E.; Belomoin, G.; Smith, A.; Abuhassan, L.; Barry, N.; Akcakir, O.; Braun, P. V.; Nayfeh, M. H.

    2001-06-04

    Ultrabright ultrasmall ({similar_to}1 nm) blue luminescent Si{sub 29} nanoparticles are chlorinated by reaction with Cl{sub 2} gas. A Si{endash}N linkage is formed by the reaction of the chlorinated particles with the functional amine group in butylamine. Fourier transform infrared spectroscopy and x-ray photospectroscopy measurements confirm the N linkage and the presence of the butyl group, while emission, excitation, and autocorrelation femtosecond optical spectroscopy show that, after the linkage formation, the particles with the ultrabright blue luminescent remain, but with a redshift of 40 nm. {copyright} 2001 American Institute of Physics.

  20. Room-temperature formation of Pt$_3$Si/Pt$_2$Si films on poly-Si substrates

    CERN Document Server

    Dubkov, V P; Chizh, K V; Yuryev, V A

    2016-01-01

    We propose a way of formation of thin bilayer Pt$_3$Si/Pt$_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness of its layers. We verify by direct x-ray photoelectron-spectroscopic measurements our previous observation of the Pt$_2$Si layer formaton between Pt and poly-Si films as a result of Pt magnetron sputtering at room temperature. This layer likely appears due to high enough temperature of Pt ions in the magnetron plasma sufficient for chemical reaction of the silicide film formation on the Si surface. The Pt$_3$Si layer likely forms from the Pt--Pt$_3$Si layer (Pt$_{95}$Si$_5$), which arises under Pt film during the magnetron sputtering, as a result of Pt removal by wet etching.

  1. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Thickness effect on the formation of SiC nanoparticles in sandwiched Si/C/Si and C/Si multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Chung, C.K., E-mail: ckchung@mail.ncku.edu.t [Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan (China); Wu, B.H.; Chen, T.S.; Peng, C.C.; Lai, C.W. [Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan (China)

    2009-08-31

    The effect of carbon (C) and amorphous silicon (a-Si) thicknesses on the formation of SiC nanoparticles (np-SiC) in sandwiched Si/C/Si and C/Si multilayers on Si(100) substrates were investigated using ultra-high-vacuum ion beam sputtering system and vacuum thermal annealing at 500, 700, 900 {sup o}C for 1.0 h. Three-layer a-Si/C/a-Si structures with thicknesses of 50/200/50 nm and 75/150/75 nm and a two-layer C/a-Si structure of 200/50 nm were examined in this study. The size and density of np-SiC were strongly influenced by the annealing temperature, a-Si thickness and layer number. Many np-SiC appeared at 900 {sup o}C at a density order about 10{sup 8} cm{sup -2} in both three-layer structures while no particles formed in the two-layer structure. The thick a-Si structure (75/150/75 nm) produces a particle density approximately 1.8 times higher than thin structure (50/200/50 nm). This implies that thick a-Si structure had a lower activation energy of SiC formation compared to the thin a-Si structure. Few particles were found at 700 {sup o}C and no particles at 500 {sup o}C in both three-layer structures. The np-SiC formation is a thermally activated reaction. The higher temperature leads to higher particle density. A mechanism of np-SiC formation in thermodynamic and kinetic viewpoints is proposed.

  3. Mo-Si alloy development

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.T.; Heatherly, L.; Wright, J.L. [Oak Ridge National Lab., TN (United States)

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  4. HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

    Institute of Scientific and Technical Information of China (English)

    黄文韬; 罗广礼; 史进; 邓宁; 陈培毅; 钱佩信

    2003-01-01

    High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.

  5. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    Energy Technology Data Exchange (ETDEWEB)

    Kowbel, W.; Tsou, K.T.; Withers, J.C. [MER Corp., Tucson, AZ (United States); Youngblood, G.E. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing.

  6. Progress of Si-based Optoelectronic Devices

    Institute of Scientific and Technical Information of China (English)

    PENG Ying-cai; FU Guang-sheng; WANG Ying-long; SHANG Yong

    2004-01-01

    Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize ali-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si-based optoelectronic devices, such as light-emitting diodes,optical waveguides devices, Si photonic bandgap crystals,and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.

  7. Honda Civic Mugen Si Sedan

    Institute of Scientific and Technical Information of China (English)

    Prometheus

    2007-01-01

    美国本田汽车公司宣布08款本田Civic Mugen,SiSedan将于10月中旬正式亮相。这辆Civic Mugen Si Sedan配备有一个高性能的悬挂系统、锻造的铝质车轮、空气动力挠流体的设计式样和一个跑车化调校排气系统,新车搭载1998cc i-VTEC直四自然吸气引擎,

  8. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  9. Morphology Analysis of Si Island Arrays on Si(001)

    Science.gov (United States)

    González-González, A.; Alonso, M.; Navarro, E.; Sacedón, J. L.; Ruiz, A.

    2010-12-01

    The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atomic force microscopy analysis of Si island arrays grown by molecular beam epitaxy. Recent reports have shown that self-assembled distributions of fourfold pyramid-like islands develop in 5-nm thick Si layers grown at substrate temperatures of 650 and 750°C on HF-prepared Si(001) substrates. Looking for wielding control and understanding the phenomena involved in this surface nanostructuring, we develop and apply a formalism that allows for processing large area AFM topographic images in a shot, obtaining surface orientation maps with specific information on facets population. The procedure reveals some noticeable features of these Si island arrays, e.g. a clear anisotropy of the in-plane local slope distributions. Total island volume analysis also indicates mass transport from the substrate surface to the 3D islands, a process presumably related to the presence of trenches around some of the pyramids. Results are discussed within the framework of similar island arrays in homoepitaxial and heteroepitaxial semiconductor systems.

  10. Laser annealing of sputter-deposited -SiC and -SiCN films

    Indian Academy of Sciences (India)

    M A Fraga; M Massi; I C Oliveira; F D Origo; W Miyakawa

    2011-12-01

    This work describes the laser annealing of -SiC and -SiCN films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of -SiCN thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiCN films.

  11. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation

    Institute of Scientific and Technical Information of China (English)

    Wang Jianqiang; Gao Hua; Zhang Jian; Meng Fanying; Ye Qinghao

    2012-01-01

    We investigate the recombination mechanism in an a-Si/c-Si interface,and analyze the key factors that influence the interface passivation quality,such as Qs,δp/δn and Dit.The polarity of the dielectric film is very important to the illustration level dependent passivation quality; when nδn =pδp and the defect level Et equal to Ei (c-Si),the defect states are the most effective recombination center,AFORS-HET simulation and analysis indicate that emitter doping and a-Si/c-Si band offset modulation are effective in depleting or accumulating one charged carrier.Interface states (Dit) severely deteriorate Voc compared with Jsc for a-Si/c-Si HJ cell performance when Dit is over 1 × 1010 cm-2.eV-1.For a c-Si(P)/a-Si(P+) structure,ΦBSF in c-Si and Φo in a-Si have different performances in optimization contact resistance and c-Si(P)/a-Si(P+) interface recombination.

  12. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  13. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures.

    Science.gov (United States)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-02-07

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance-voltage (C-V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3-4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements.

  14. Three carbon pairs in Si

    Energy Technology Data Exchange (ETDEWEB)

    Docaj, A. [Physics Department, Texas Tech University, Lubbock, TX 79409-1051 (United States); Estreicher, S.K., E-mail: Stefan.Estreicher@ttu.edu [Physics Department, Texas Tech University, Lubbock, TX 79409-1051 (United States)

    2012-08-01

    Carbon impurities in Si are common in floating-zone and cast-Si materials. The simplest and most discussed carbon complex is the interstitial-substitutional C{sub i}C{sub s} pair, which readily forms when self-interstitials are present in the material. This pair has three possible configurations, each of which is electrically active. The less common C{sub s}C{sub s} pair has been studied in irradiated material but has also recently been seen in as-grown C-rich cast-Si, which is commonly used to fabricate solar cells. The third pair consists of two interstitial C atoms: C{sub i}C{sub i}. Although its formation probability is low for several reasons, the C{sub i}C{sub i} pair is very stable and electrically inactive. In this contribution, we report preliminary results of first-principles calculations of these three C pairs in Si. The structures, binding energies, vibrational spectra, and electrical activity are predicted.

  15. Using SI Units in Astronomy

    Science.gov (United States)

    Dodd, Richard

    2011-12-01

    1. Introduction; 2. An introduction to SI units; 3. Dimensional analysis; 4. Unit of angular measure (radian); 5. Unit of time (second); 6. Unit of length (metre); 7. Unit of mass (kilogram); 8. Unit of luminous intensity (candela); 9. Unit of thermodynamic temperature (kelvin); 10. Unit of electric current (ampere); 11. Unit of amount of substance (mole); 12. Astronomical taxonomy; Index.

  16. The impact resistance of SiC and other mechanical properties of SiC and Si3N4

    Science.gov (United States)

    Bradt, R. C.

    1984-01-01

    Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

  17. The HFIR 14J irradiation SiC/SiC composite and SiC fiber collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira; Katoh, Yutai [Kyoto Univ., Uji, Kyoto (Japan); Hasegawa, Akira [Tohoku Univ., Aramaki, Sendai (Japan); Snead, L. [Oak Ridge National Lab., TN (United States); Scholz, R.

    1998-09-01

    A short introduction with references establishes the current status of research and development of SiC{sub f}/SiC composites for fusion energy systems with respect to several key issues. The SiC fiber and composite specimen types selected for the JUPITER 14J irradiation experiment are presented together with the rationale for their selection.

  18. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  19. Superior solid solubility of MnSiO3 in CaSiO3 perovskite

    Science.gov (United States)

    Li, Lin; Nagai, Takaya; Seto, Yusuke; Fujino, Kiyoshi; Kawano, Jun; Itoh, Shoich

    2015-02-01

    The silicate perovskite phase relation between CaSiO3 and MnSiO3 was investigated at 35-52 GPa and at 1,800 K using laser-heated diamond anvil cells combined with angle-dispersive synchrotron X-ray diffraction and energy-dispersive X-ray spectroscopic chemical analyses with scanning or transmission electron microscopy. We found that MnSiO3 can be incorporated into CaSiO3 perovskite up to 55, and 20 mol % of CaSiO3 is soluble in MnSiO3 perovskite. The range of 55-80 mol % of MnSiO3 in the CaSiO3-MnSiO3 perovskite system could be immiscible. We also observed that the two perovskite structured phases of the Mn-bearing CaSiO3 and the Ca-bearing MnSiO3 coexisted at these conditions. The Mn-bearing CaSiO3 perovskite has non-cubic symmetry and the Ca-bearing MnSiO3 perovskite has an orthorhombic structure with space group Pbnm. All the perovskite structured phases in the CaSiO3-MnSiO3 system convert to the amorphous phase during pressure release. MnSiO3 is the first chemical component confirmed to show such a superior solid solubility in CaSiO3 perovskite.

  20. Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

    Science.gov (United States)

    Dingemans, G.; Mandoc, M. M.; Bordihn, S.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2011-05-01

    Very low surface recombination velocities field-effect passivation was absent for a reference stack comprising thermally grown SiO2. The results indicate that hydrogenation of interface states played a key role in the passivation and remained effective up to annealing temperatures >800 °C.

  1. An inside job for siRNAs.

    Science.gov (United States)

    Golden, Daniel E; Gerbasi, Vincent R; Sontheimer, Erik J

    2008-08-08

    Among the three main categories of small silencing RNAs in insects and mammals-siRNAs, miRNAs, and piRNAs-siRNAs were thought to arise primarily from exogenous sources, whereas miRNAs and piRNAs arise from endogenous loci. Recent work in flies and mice reveals several classes of endogenous siRNAs (endo-siRNAs) that contribute to functions previously reserved for miRNAs and piRNAs, including gene regulation and transposon suppression.

  2. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  3. An introduction to the New SI

    CERN Document Server

    Knotts, Sandra; Phillips, William D

    2015-01-01

    Plans are underway to redefine the International System of Units (SI) around 2018. The New SI specifies the values of certain physical constants to define units. This article explains the New SI in a way that could be used to present it to high-school physics classes.

  4. Emission efficiency limit of Si nanocrystals

    NARCIS (Netherlands)

    Limpens, R.; Luxembourg, S.L.; Weeber, A.W.; Gregorkiewicz, T.

    2016-01-01

    One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use

  5. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  6. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the

  7. Microstructure and wear studies of laser clad Al-Si/SiC(p) composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Colaco, R.; Vilar, R.; Ocelik, V.; De Hosson, J. Th. M.

    2007-01-01

    Coatings of a composite material consisting of an Al-Si matrix reinforced with SiC particles were produced by laser cladding on UNS A03560 cast Al-alloy substrates from mixtures of powders of Al-12 wt.% Si alloy and SiC. The influence of the processing parameters on the microstructure and abrasive

  8. Ultrasound assisted siRNA delivery using PEG-siPlex loaded microbubbles.

    Science.gov (United States)

    Vandenbroucke, Roosmarijn E; Lentacker, Ine; Demeester, Joseph; De Smedt, Stefaan C; Sanders, Niek N

    2008-03-20

    Short interfering RNA (siRNA) attracts much attention for the treatment of various diseases. However, its delivery, especially via systemic routes, remains a challenge. Indeed, naked siRNAs are rapidly degraded, while complexed siRNAs massively aggregate in the blood or are captured by macrophages. Although this can be circumvented by PEGylation, we found that PEGylation had a strong negative effect on the gene silencing efficiency of siRNA-liposome complexes (siPlexes). Recently, ultrasound combined with microbubbles has been used to deliver naked siRNA but the gene silencing efficiency is rather low and very high amounts of siRNA are required. To overcome the negative effects of PEGylation and to enhance the efficiency of ultrasound assisted siRNA delivery, we coupled PEGylated siPlexes (PEG-siPlexes) to microbubbles. Ultrasound radiation of these microbubbles resulted in massive release of unaltered PEG-siPlexes. Interestingly, PEG-siPlexes loaded on microbubbles were able to enter cells after exposure to ultrasound, in contrast to free PEG-siPlexes, which were not able to enter cells rapidly. Furthermore, these PEG-siPlex loaded microbubbles induced, in the presence of ultrasound, much higher gene silencing than free PEG-siPlexes. Additionally, the PEG-siPlex loaded microbubbles only silenced the expression of genes in the presence of ultrasound, which allows space and time controlled gene silencing.

  9. Microstructure and wear studies of laser clad Al-Si/SiC(p) composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Colaco, R.; Vilar, R.; Ocelik, V.; De Hosson, J. Th. M.

    2007-01-01

    Coatings of a composite material consisting of an Al-Si matrix reinforced with SiC particles were produced by laser cladding on UNS A03560 cast Al-alloy substrates from mixtures of powders of Al-12 wt.% Si alloy and SiC. The influence of the processing parameters on the microstructure and abrasive w

  10. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the mic

  11. SiO adsorption on a p(2 × 2) reconstructed Si(1 0 0) surface

    NARCIS (Netherlands)

    Violanda, M.; Rudolph, H.

    2009-01-01

    We have investigated the adsorption mechanism of SiO molecule incident on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. Stable adsorption geometries of SiO on Si surface, as well as their corresponding activation and adsorption energies are identifie

  12. MoSi2 oxidation resistance coatings for Mo5Si3/MoSi2 composites

    Institute of Scientific and Technical Information of China (English)

    YAN Jianhui; XU Hongmei; ZHANG Houan; TANG Siwen

    2009-01-01

    In order to improve the oxidation resistance properties of 30 at.% Mo5Si3/MoSi2 composite at high temperature in air, a molybdenum disili-tide coating was prepared on its surface by a molten salt technology. XRD and SEM analysis showed that only tetragonal MoSi2 phase ex-isted in the coating after being siliconized for 5 h at 900℃. The oxidation film formed on the uncoated sample was not dense, so that oxygen diffused easily through it. The volatilization of MoO3 resulted in the oxidation film separating from the substrate. The MoSi2coating was proved to be an effective method to prevent 30 at.% MosSi3/MoSi2 composites from being oxidized at 1200℃. A dense glassy SiO2 film was formed on the MoSi2 coating surface, which acted as a barrier layer for the diffusion of oxygen atoms to the substrate. The 30at.% Mo5Si3/MoSi2 composites with a MoSi2 coating showed much better oxidation resistance at high temperature.

  13. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  14. Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

    Science.gov (United States)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Codeposition of silicon and cobalt on heated silicon substrates in ratios several times the silicide stoichiometry is found to result in epitaxial columns of CoSi2 surrounded by a matrix of epitaxial silicon. For (111)-oriented wafers, nearly cylindrical columns are formed, where both columns and surrounding silicon are defect free, as deduced from transmission electron microscopy. Independent control of the column diameter and separation is possible, and diameters of 27-135 nm have been demonstrated.

  15. Si Scott溜冰鞋

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Vauxhall Ice Skate公司特别邀请Si Scott为Vauxhall Ice Skate event活动设计了一款造型奇特的溜冰鞋:鞋身以轿车模样出现下面则是冰刀,再加上设计师的非凡创意涂鸦,令溜冰鞋充满童趣。

  16. Nanoporosity of Si (100) bars

    Science.gov (United States)

    Novikov, S. N.; Timoshenkov, S. P.; Minaev, V. S.; Goryunova, E. P.; Gerasimenko, N. N.; Smirnov, D. I.

    2016-09-01

    Si(100) samples cut from a typical bar (100 mm in diameter) prepared using industrial technology are studied. Measurements of the electron work function (EWF) show that the size effects in these samples (a reduction in thickness along with a sample's area and the EWF) detected earlier were due to nanostructure porosity that was buried by the technological treatment of a bar's surface. This hidden nanoporosity is assumed to be a manifestation of the secondary crystal structure.

  17. Lattice dislocation in Si nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Omar, M.S., E-mail: dr_m_s_omar@yahoo.co [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq); Taha, H.T. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)

    2009-12-15

    Modified formulas were used to calculate lattice thermal expansion, specific heat and Bulk modulus for Si nanowires with diameters of 115, 56, 37 and 22 nm. From these values and Gruneisen parameter taken from reference, mean lattice volumes were found to be as 20.03 A{sup 3} for the bulk and 23.63, 29.91, 34.69 and 40.46 A{sup 3} for Si nanowire diameters mentioned above, respectively. Their mean bonding length was calculated to be as 0.235 nm for the bulk and 0.248, 0.269, 0.282 and 0.297 nm for the nanowires diameter mentioned above, respectively. By dividing the nanowires diameter on the mean bonding length, number of layers per each nanowire size was found to be as 230, 104, 65 and 37 for the diameters mentioned above, respectively. Lattice dislocations in 22 nm diameter wire were found to be from 0.00324 nm for the 1st central lattice to 0.2579 nm for the last surface lattice. Such dislocation was smaller for larger wire diameters. Dislocation concentration found to change in Si nanowires according to the proportionalities of surface thickness to nanowire radius ratios.

  18. Current–voltage studies on -FeSi2/Si heterojunction

    Indian Academy of Sciences (India)

    A Datta; S Kal; S Basu

    2000-08-01

    – characteristics of both -FeSi2/n-Si and -FeSi2/p-Si were studied at room temperature. The junctions were formed by depositing Fe on Si selectively followed by thermal annealing and some samples were later treated by pulsed laser. Temperature of thermal annealing and diode area were also varied. – studies on all these samples were done and ideality factors were computed. Results obtained were interpreted.

  19. Effect of Si interface surface roughness to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor

    Energy Technology Data Exchange (ETDEWEB)

    Hasanah, Lilik, E-mail: lilikhasanah@upi.edu; Suhendi, Endi; Tayubi, Yuyu Rahmat; Yuwono, Heru [Department of Physics Education, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Nandiyanto, Asep Bayu Dani [Department Kimia, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Murakami, Hideki [Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan); Khairrurijal [Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung 40132 (Indonesia)

    2016-02-08

    In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

  20. Active Oxidation of SiC

    Science.gov (United States)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  1. Complexation of Si in Hydrothermal Systems

    Institute of Scientific and Technical Information of China (English)

    樊文苓; 王声远; 田弋夫; 陈紫新

    2001-01-01

    The Au-SiO2 and Sn-SiO2 complexes have been experimentally calibrated at varying temperature, silica concentration and pH:Au+ + H3SiO4-=AuH3SiO4 lgK = - 1. 65436 + 9611.21/TSn4 + + 4H3SiO4-=Sn(H3SiO4)4 lgK200℃ = 42.73Compared with Au-Cl, Au-HS and Sn-OH complexes, AuH3SiO4 and Sn(H3SiO4)4 complexes can be recognized as the dominant transport forms in Si-bearing solutions under pH and Eh con ditions of general interest. The decrease of SiO2 concentration and oxygen fugacity would re verse the direction of dissolution-complexing reactions, resulting in the precipitation of gold and silica, as well as cassiterite and silica. This study illustrates the significance of SiO2-complexa tion in hydrothermal solutions for gold, tin and other metallizations.

  2. Comparison of the thermal stabilities of NiSi films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si systems

    CERN Document Server

    Wang, R N

    2003-01-01

    The effects of different interlayer materials (Pd and Pt) deposited between Ni films and Si substrates on the NiSi thermal stability are discussed. Ni sub 0 sub . sub 9 sub 4 sub 3 Pd sub 0 sub . sub 0 sub 5 sub 7 Si and Ni sub 0 sub . sub 9 sub 4 sub 5 Pt sub 0 sub . sub 0 sub 5 sub 5 Si solid solutions were formed when the samples were annealed at high temperatures and the lattice parameters of Ni sub 0 sub . sub 9 sub 4 sub 3 Pd sub 0 sub . sub 0 sub 5 sub 7 Si were calculated according to Vegard's law. The NiSi thermal stability was enhanced by interposing a Pd or Pt interlayer, and the sample with the Pt interlayer had the highest NiSi thermal stability among all the samples studied. This is attributed to the reduction of the interface energy between NiSi and Si substrates and the decrease of the driving force for the nucleation of NiSi sub 2 , induced by formation of the NiSi(200) preferred orientation and the solid solution respectively.

  3. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

    Directory of Open Access Journals (Sweden)

    Liu Jian

    2009-01-01

    Full Text Available Abstract Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

  4. Theoretic Study on Band Structure of Si/SiNx Multilayer Film%Si/SiNx多层膜能带结构的理论研究

    Institute of Scientific and Technical Information of China (English)

    徐明; 魏屹; 何贤模; 芦伟

    2010-01-01

    利用Kronig-Penney模型计算了Si/SiNx多层膜结构中Si亚层的能带结构.结果表明,无论是减少Si或Si/SiNx亚层的厚度都将导致Si层的带隙发生宽化,计算结果与实验值符合较好.进而还发现,当Si层厚度减小时,Si/SiNx多层膜结构中载流子(电子和空穴)的有效质量均减小,有利于对载流子复合发光的控制.计算结果对实验上研究发光可控的Si/SiNx多层膜结构有重要指导意义.

  5. Differential cross sections measurement of 28Si(p,p/γ)28Si and 29Si(p,p/γ)29Si reactions for PIGE applications

    Science.gov (United States)

    Jokar, A.; Kakuee, O.; Lamehi-Rachti, M.

    2016-03-01

    Differential cross sections for gamma-ray emission from the 28Si(p,p/γ)28Si (Eγ = 1779 keV) and the 29Si(p,p/γ)29Si (Eγ = 1273 keV) nuclear reactions were measured in the energy range of 2.0-3.2 MeV and 2.0-3.0 MeV, respectively. The thin Si targets were prepared by evaporating natural SiO onto self-supporting Ag films. The gamma-rays and backscattered protons were detected simultaneously. An HPGe detector placed at an angle of 90° with respect to beam direction was employed to collect gamma-rays while an ion implanted Si detector placed at a scattering angle of 165° was used to detect backscattered protons. The great advantage of this work is that differential cross sections were obtained with a procedure irrespective of absolute value of the collected beam charge.

  6. Enhancement of the Si p-n diode NIR photoresponse by embedding [beta]-FeSi2 nanocrystallites

    National Research Council Canada - National Science Library

    A V Shevlyagin; D L Goroshko; E A Chusovitin; K N Galkin; N G Galkin; A K Gutakovskii

    2015-01-01

    ...+ -Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes...

  7. Deformation effects in the 28Si + 12C and 28Si + 28Si reactions

    Indian Academy of Sciences (India)

    C Bhattacharya; M Rousseau; C Beck; V Rauch; R M Freeman; R Nouicer; F Haas; O Dorvaux; K Eddahbi; P Papka; O Stezwski; S Szilner; D Mahboub; A Szanto De Toledo; A Hachem; E Martin; S J Sanders

    2001-07-01

    The possible occurrence of highly deformed configurations is investigated in the 40Ca and 56Ni di-nuclear systems as formed in the 28Si + 12C, 28Si reactions by using the properties of emitted light charged particles. Inclusive as well as exclusive data of the heavy fragments and their associated light charged particles have been collected by using the ICARE charged particle multidetector array. The data are analysed by Monte Carlo CASCADE statistical-model calculations using a consistent set of parameters with spin-dependent level densities. Significant deformation effects at high spin are observed as well as an unexpected large 8Be cluster emission of a binary nature.

  8. Corrosion properties of amorphous Mo-Si-N and nanolayered Mo-Si-Nn/SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Torri, P.; Mahiout, A.; Koskinen, J.; Hirvonen, J.P.; Johansson, L.S.

    2000-02-01

    Corrosion properties of sputter deposited MoSi{sub 2}, SiC, Mo-Si-N (MoSi{sub 2.2}N{sub 2.5}) and nanolayered Mo-Si-N/SiC coatings on Fe37 low carbon steel have been studied using electrochemical polarization measurements in 1 N H{sub 2}SO{sub 4} solution. A decrease in both critical current density for passivation and minimum current in passive state was observed in annealed nanolayered Mo-Si-N/SiC coating compared to each of its constituents alone as single layer coating. On contrary to MoSi{sub 2} coating, only slight increase in critical current density was observed in Mo-Si-N coated sample after annealing. Molybdenum disilicide source material has good thermal and electrical conductivity, which allows effective dc-magnetron sputter deposition. Therefore this is a relatively simple method to produce amorphous coatings which have a high crystallization temperature and promising properties for corrosion applications.

  9. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  10. GeSn/Si Avalanche Photodetectors on Si substrates

    Science.gov (United States)

    2016-09-16

    Photodetectors on Si substrates Report Title In this project, firstly, the material growth of GeSn by chemical vapor deposition (CVD) system has been...between GeSn and other market dominating IR detectors in short-IR wavelength (First time reported the D* of a GeSn detector in the world). The D* of...Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 Final Report W911NF-13-1-0196 64461-EL-DRP.43 479-575-7265 a. REPORT 14. ABSTRACT 16

  11. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  12. Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

    Science.gov (United States)

    Li, Can; Han, Lili; Jiang, Hao; Jang, Moon-Hyung; Lin, Peng; Wu, Qing; Barnell, Mark; Yang, J. Joshua; Xin, Huolin L.; Xia, Qiangfei

    2017-06-01

    Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor arrays to function properly. Here we demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays. With a p-Si/SiO2/n-Si structure, our memristor exhibits repeatable unipolar resistance switching behaviour (105 rectifying ratio, 104 ON/OFF) and excellent retention at 300 °C. We further build three-dimensinal crossbar arrays (up to five layers of 100 nm memristors) using fluid-supported silicon membranes, and experimentally confirm the successful suppression of both intra- and inter-layer sneak path currents through the built-in diodes. The current work opens up opportunities for low-cost mass production of three-dimensional memristor arrays on large silicon and flexible substrates without increasing circuit complexity.

  13. High-efficiency si/polymer hybrid solar cells based on synergistic surface texturing of Si nanowires on pyramids.

    Science.gov (United States)

    He, Lining; Lai, Donny; Wang, Hao; Jiang, Changyun; Rusli

    2012-06-11

    An efficient Si/PEDOT:PSS hybrid solar cell using synergistic surface texturing of Si nanowires (SiNWs) on pyramids is demonstrated. A power conversion efficiency (PCE) of 9.9% is achieved from the cells using the SiNW/pyramid binary structure, which is much higher than similar cells based on planar Si, pyramid-textured Si, and SiNWs. The PCE is the highest reported to-date for hybrid cells based on Si nanostructures and PEDOT.

  14. Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell

    Institute of Scientific and Technical Information of China (English)

    Hu Yuehui; Zhang Xiangwen; Qu Minghao; Wang Lifu; Zeng Tao; Xie Yaojiang

    2009-01-01

    In order to investigate the effects of a back surface field (BSF) on the performance of a p-doped amorphous silicon (p-a-Si:H)/n-doped crystalline silicon (n-c-Si) solar cell, a heterojunction solar cell with a p-a-Si:H/nc-Si/n+-a-Si:H structure was designed. An n+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n+-a-Si:H solar cells were simulated. It was shown that the BSF of the p-a-Si:H/n-c-Si/n+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.

  15. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  16. Microstructures and Properties of Ti-Coated SiCp Reinforced Al-Si Alloy Composites

    Science.gov (United States)

    Feng, Yan; Ren, Junpeng; Dong, Cuige; Wang, Richu

    2016-12-01

    A double-layer structure of Ti coating was plated on the surface of SiC particles using a diffusion method in a vacuum reactor, which is a new method to fabricate a Ti-coating layer on the SiC particles. The phase structure of Ti coating on the surface of SiC particles was composed inside of Ti5Si3 and outside of TiC investigated by x-ray diffraction. The Ti5Si3 and TiC double-layer structure realizes the tight chemical bonding between SiC particles and the Ti coating, and significantly promotes the wettability between the aluminum matrix and the Ti-coated SiC particles. The Ti-coated SiCp-reinforced Al-Si composites are prepared by a powder metallurgy method, and express excellent relative densities, desirable mechanical properties and frictional wear resistance.

  17. Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

    Science.gov (United States)

    Roussel, M; Talbot, E; Pratibha Nalini, R; Gourbilleau, F; Pareige, P

    2013-09-01

    Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures.

  18. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  19. From Si wafers to cheap and efficient Si electrodes for Li-ion batteries

    Science.gov (United States)

    Gauthier, Magali; Reyter, David; Mazouzi, Driss; Moreau, Philippe; Guyomard, Dominique; Lestriez, Bernard; Roué, Lionel

    2014-06-01

    High-energy ball milling is used to recycle Si wafers to produce Si powders for negative electrodes of Li-ion batteries. The resulting Si powder consists in micrometric Si agglomerates made of cold-welded submicrometric nanocrystalline Si particles. Silicon-based composite electrodes prepared with ball-milled Si wafer can achieve more than 900 cycles with a capacity of 1200 mAh g-1 of Si (880 mAh g-1 of electrode) and a coulombic efficiency higher than 99%. This excellent electrochemical performance lies in the use of nanostructured Si produced by ball milling, the electrode formulation in a pH 3 buffer solution with CMC as binder and the use of FEC/VC additives in the electrolyte. This work opens the way to an economically attractive recycling of Si wastes.

  20. Fusion of Si28+Si28,30: Different trends at sub-barrier energies

    Science.gov (United States)

    Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Jiang, C. L.; Corradi, L.; Courtin, S.; Fioretto, E.; Grebosz, J.; Haas, F.; Jia, H. M.; Mazzocco, M.; Michelagnoli, C.; Mijatović, T.; Montanari, D.; Parascandolo, C.; Scarlassara, F.; Strano, E.; Szilner, S.; Torresi, D.

    2014-10-01

    Background: The fusion excitation function of the system Si28+Si28 at energies near and below the Coulomb barrier is known only down to ≃15 mb. This precludes any information on both coupling effects on sub-barrier cross sections and the possible appearance of hindrance. For Si28+Si30 even if the fusion cross section is measured down to ≃50 μb, the evidence of hindrance is marginal. Both systems have positive fusion Q values. While Si28 has a deformed oblate shape, Si30 is spherical. Purpose: We investigate 1. the possible influence of the different structure of the two Si isotopes on the fusion excitation functions in the deep sub-barrier region and 2. whether hindrance exists in the Si+Si systems and whether it is strong enough to generate an S-factor maximum, thus allowing a comparison with lighter heavy-ion systems of astrophysical interest. Methods: Si28 beams from the XTU Tandem accelerator of the INFN Laboratori Nazionali di Legnaro were used. The setup was based on an electrostatic beam separator, and fusion evaporation residues (ER) were detected at very forward angles. Angular distributions of ER were measured. Results: Fusion cross sections of Si28+Si28 have been obtained down to ≃600 nb. The slope of the excitation function has a clear irregularity below the barrier, but no indication of a S-factor maximum is found. For Si28+Si30 the previous data have been confirmed and two smaller cross sections have been measured down to ≃4 μb. The trend of the S-factor reinforces the previous weak evidence of hindrance. Conclusions: The sub-barrier cross sections for Si28+Si28 are overestimated by coupled-channels calculations based on a standard Woods-Saxon potential, except for the lowest energies. Calculations using the M3Y+repulsion potential are adjusted to fit the Si28+Si28 and the existing Si30+Si30 data. An additional weak imaginary potential (probably simulating the effect of the oblate Si28 deformation) is required to fit the low-energy trend of

  1. Electrical Performance of Electron Irradiated SiGe HBT and Si BJT

    Institute of Scientific and Technical Information of China (English)

    Wentao HUANG; Jilin WANG; Zhinong LIU; Peiyi CHEN; Peihsin TSIEN; Xiangti MENG

    2004-01-01

    The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gainβ decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well asβ decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation ofβ for both SiGeHBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

  2. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Joongoo; Park, Ji-Sang; Stradins, Pauls; Wei, Su-Huai

    2017-07-01

    Nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent Si2AlP (or Si2ZnS) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, Si2AlP (or Si2ZnS) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronic and optical properties of the nonisovalent alloys.

  3. Study of indentation induced cracks in MoSi2-reaction bonded SiC ceramics

    Indian Academy of Sciences (India)

    O P Chakrabarti; P K Das; S Mondal

    2001-04-01

    MoSi2–RBSC composite samples were prepared by infiltration of Si–2 at.% Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a density > 92% of the theoretical density (TD) and microstructurally contained SiC, MoSi2, residual Si and unreacted C. The material was tested for indentation fracture toughness at room temperature with a Vicker’s indenter and KIC was found to be 4.42 MPa√m which is around 39% higher than the conventional RBSC material. Enhancement in indentation fracture toughness is explained in terms of bowing of propagating cracks through MoSi2/SiC interface which is under high thermal stress arising from the thermal expansion mismatch between MoSi2 and SiC.

  4. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  5. Fabrication and characterization of Ti3SiC2–SiC nanocomposite by in situ reaction synthesis of TiC/Si/Al powders

    Indian Academy of Sciences (India)

    Baoyan Liang; Mingzhi Wang; Xiaopu Li; Yunchao Mu

    2011-12-01

    The microstructure and mechanical properties of Ti3SiC2–SiC nanocomposite fabricated by in situ hot pressing (HP) synthesis process were studied. The results show that dense Ti3SiC2–SiC composite contained minor TiSi2 obtained by hot sintering at 1350°C for 1 h. The average grain size of Ti3SiC2 was 4 m in length, and the size of SiC grains is about 100 nm. With its fine microstructure, the Ti3SiC2–SiC nanocomposite shows good mechanical properties.

  6. Si3N4/SiC nanocomposite powder from a preceramic polymeric network based on poly(methylsilane as the SiC precursor

    Directory of Open Access Journals (Sweden)

    Maurício F. Gozzi

    2001-01-01

    Full Text Available Si3N4/SiC nanocomposite powders were obtained from a preceramic polymeric network based on poly(methylsilane as the in situ quasi-stoichiometric SiC source. These powders were constituted of nanosized SiC particles homogeneously distributed in the Si3N4 particulate matrix. beta-SiC whiskers were grown at 1400 °C in the pores of the matrix. At 1600 °C, the alpha -> beta Si3N4 phase transition took place, but no elemental silicon from Si3N4 decomposition was detected, evidencing the protective effect of the SiC phase.

  7. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  8. Photoluminescence and structural properties of Si/SiC core–shell nanowires growth by HWCVD

    Energy Technology Data Exchange (ETDEWEB)

    Nazarudin, Nur Fatin Farhanah Binti; Mohd Noor, Nurul Jannah Binti; Rahman, Saadah Abdul; Goh, Boon Tong, E-mail: boontong77@yahoo.com

    2015-01-15

    Si/SiC core–shell nanowires grown by hot-wire chemical vapor deposition were studied. Ni nanoparticles act as metal nano-templates to catalyze the growth of these core–shell nanowires. These nanowires were grown at different deposition pressures of 0.5 and 1 mbar. The nanowires showed a tapered-like morphology at deposition pressure 0.5 mbar. Increase in pressure to 1 mbar leads to a formation of agglomerated grains at the root of the nanowires. The results show that these nanowires consisted of crystalline Si core and amorphous SiC shell nanowires. Increase in pressure enhanced the formation of SiC phase in the shell of the nanowires. On the other hand, the formation of the agglomerated grains attributed to an increasing of the SiC phase at higher deposition pressure. The presence of Si and SiC nano-crystallites embedded within an amorphous matrix exhibited a room temperature PL emission in the range of 400–1000 nm. The effects of the deposition pressure on the optical and structural properties of the nanowires are also discussed. - Highlights: • Growth of Si/SiC core–shell nanowires by HWCVD. • The nanowires consisted of crystalline Si core and amorphous SiC shell. • Metal nano-templates catalyzed the growth of Si core nanowires. • Increase in deposition pressure enhanced the SiC phase. • The presence of nano-crystallites exhibited a room temperature PL.

  9. Resonance Raman mapping as a tool to monitor and manipulate Si nanocrystals in Si-SiO{sub 2} nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Ekta; Ingale, Alka A., E-mail: alka@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Chaturvedi, A. [Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Joshi, M. P.; Kukreja, L. M. [Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

    2015-10-19

    Specially designed laser heating experiment along with Raman mapping on Si-SiO{sub 2} nanocomposites elucidates the contribution of core and surface/interface in the intermediate frequency range (511–514 cm{sup −1}) Si phonons. The contribution of core to surface/interface increases with the size of Si nanocrystal, which itself increases on laser irradiation. Further, it is found that resonance Raman is crucial to the observance of surface/interface phonons and wavelength dependent Raman mapping can be corroborated with band edges observed in absorption spectra. This understanding can be gainfully used to manipulate and characterize Si-SiO{sub 2} nanocomposite, simultaneously for photovoltaic device applications.

  10. Airborne Emissions from Si/FeSi Production

    Science.gov (United States)

    Kero, Ida; Grådahl, Svend; Tranell, Gabriella

    2017-02-01

    The management of airborne emissions from silicon and ferrosilicon production is, in many ways, similar to the management of airborne emissions from other metallurgical industries, but certain challenges are highly branch-specific, for example the dust types generated and the management of NO X emissions by furnace design and operation. A major difficulty in the mission to reduce emissions is that information about emission types and sources as well as abatement and measurement methods is often scarce, incomplete and scattered. The sheer diversity and complexity of the subject presents a hurdle, especially for new professionals in the field. This article focuses on the airborne emissions from Si and FeSi production, including greenhouse gases, nitrogen oxides, airborne particulate matter also known as dust, polyaromatic hydrocarbons and heavy metals. The aim is to summarize current knowledge in a state-of-the-art overview intended to introduce fresh industry engineers and academic researchers to the technological aspects relevant to the reduction of airborne emissions.

  11. Impact Resistance of Uncoated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded: At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained approx.50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing.

  12. Airborne Emissions from Si/FeSi Production

    Science.gov (United States)

    Kero, Ida; Grådahl, Svend; Tranell, Gabriella

    2016-10-01

    The management of airborne emissions from silicon and ferrosilicon production is, in many ways, similar to the management of airborne emissions from other metallurgical industries, but certain challenges are highly branch-specific, for example the dust types generated and the management of NO X emissions by furnace design and operation. A major difficulty in the mission to reduce emissions is that information about emission types and sources as well as abatement and measurement methods is often scarce, incomplete and scattered. The sheer diversity and complexity of the subject presents a hurdle, especially for new professionals in the field. This article focuses on the airborne emissions from Si and FeSi production, including greenhouse gases, nitrogen oxides, airborne particulate matter also known as dust, polyaromatic hydrocarbons and heavy metals. The aim is to summarize current knowledge in a state-of-the-art overview intended to introduce fresh industry engineers and academic researchers to the technological aspects relevant to the reduction of airborne emissions.

  13. Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions

    Science.gov (United States)

    Shaban, Mahmoud; Bayoumi, Amr M.; Farouk, Doaa; Saleh, Mohamed B.; Yoshitake, Tsuyoshi

    2016-09-01

    In this paper, an application of nanocrystalline iron disilicide (NC-FeSi2) combined with nanocrystalline-Si (NC-Si) in a heterostructured solar cell is introduced and numerically evaluated in detail. The proposed cell structure is studied based on an experimental investigation of photovoltaic properties of NC-FeSi2/crystalline-Si heterojunctions, composed of unintentionally-doped NC-FeSi2 thin film grown on Si substrate. Photoresponse measurement of NC-FeSi2/crystalline-Si heterojunction confirmed ability of NC-FeSi2 to absorb NIR light and to generate photocarriers. However, collection of these carriers was not so efficient and a radical improvement in design of the device is required. Therefore, a modified device structure, comprising of NC-FeSi2 layer sandwiched between two heavily-doped p- and n-type NC-Si, is suggested and numerically evaluated. Simulation results showed that the proposed structure would exhibit a relatively high conversion efficiency of 25%, due to an improvement in collection efficiency of photogenerated carriers in the NC-FeSi2 and NC-Si layers. To attain such efficiency, defect densities in NC-FeSi2 and NC-Si layers should be kept less than 1014 and 1016 cm-3 eV-1, respectively. Remarkable optical and electrical properties of NC-FeSi2, employed in the proposed structure, facilitate improving device quantum efficiency spectrum providing significant spectrum extension into the near-infrared region beyond Si bandgap.

  14. In-Plane Si Nanowire Growth Mechanism in Absence of External Si Flux.

    Science.gov (United States)

    Curiotto, Stefano; Leroy, Frédéric; Cheynis, Fabien; Müller, Pierre

    2015-07-01

    We report on a new mechanism of nanowire formation: during Au deposition on Si(110) substrates, Au-Si droplets grow, move spontaneously, and fabricate a Si nanowire behind them in the absence of Si external flux. Nanowires are formed by Si dissolved from the substrate at the advancing front of the droplets and transported backward to the crystallization front. The droplet shape is determined by the Si etching anisotropy. The nanowire formation can be tuned by changing experimental parameters like substrate temperature and Au deposition rate.

  15. Si/SiO2/p-Si结构的电学特性

    Institute of Scientific and Technical Information of China (English)

    马自军; 马书懿

    2008-01-01

    用射频磁控溅射法在p-Si衬底上制备了Si/SiO2薄膜,利用Au/(Si/SiO2)/p-Si结构的I-V特性曲线对其电学特性进行了分析.结果表明,样品具有很好的整流作用,起整流作用的势垒存在于(Si/SiO2)/p-Si界面附近.

  16. Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

    Institute of Scientific and Technical Information of China (English)

    XIA Zheng-Yue; HAN Pei-Gao; XU Jun; CHEN De-Yuan; WEI De-Yuan; MA Zhong-Yuan; CHEN Kun-Ji; XU Ling; HUANG Xin-Fan

    2007-01-01

    Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures.The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.

  17. 非晶硅/晶体硅(a-Si/c-Si)异质结%Property Investigation of a-Si/c-Si Hetero-Junction Structure

    Institute of Scientific and Technical Information of China (English)

    汪建强; 高华; 张剑; 张松; 李晨; 叶庆好; 孟凡英

    2011-01-01

    通过对非晶硅/晶体硅(a-Si/c-Si)异质结能带不连续、发射结掺杂以及界面态密度进行分析,研究它们对a-Si/c-Si异质结的界面特性,以及a-Si(N+)/c-Si(P)结构电池性能的影响.研究发现,能带不连续以及a-Si发射结高掺杂有利于实现界面复合机制由以悬挂键复合主导的复合机制向由少数载流子复合占主导的SRH(Shockly-Read-Hall)复合机制转变,有效降低界面复合速率.AFORS-HET软件模拟显示:在c-Si(P)衬底掺杂浓度为1.6×1016cm-3时,a-Si(N+)发射结掺杂浓度大于1.5×1020cm-3是获得高电池效率的必要条件;与短路电流密度相比,开路电压受a-Si/c-Si界面态密度影响更明显.%T his paper investigated the influence ot a-hi/c-bi band ottset, amorphous silicon emitter doping concentration and interface defects density on interface property of a-Si/c-Si structure. Band offset in a-Si(N+ )/c-Si(P) hetero-junction and a-Si emitter high level doping is very useful for the transformation of recombination mechanism from dangling bond to SRH (Shockly-Read-Hall). AFORS-HET simulation indicates that a-Si(N+ ) emitter doping level of over 1. 5X1020 cm~3 on c-Si(P) is an indispensable condition for achieving high efficiency. Comparing with density of short circuit current, open circuit voltage of a-Si/c-Si structure cell is much more susceptible to interface defect density.

  18. Epitaxy of Si1- x C x via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors

    Science.gov (United States)

    Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong

    2017-09-01

    In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1- x C x epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1- x C x epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1- x C x epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.

  19. Magnetron-sputter epitaxy of {beta}-FeSi{sub 2}(220)/Si(111) and {beta}-FeSi{sub 2}(431)/Si(001) thin films at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi [Institute of Materials Research and Engineering (IMRE), A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2012-07-15

    {beta}-FeSi{sub 2} thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 Degree-Sign C. On Si(111), the growth is consistent with the commonly observed orientation of [001]{beta}-FeSi{sub 2}(220)//[1-10]Si(111) having three variants, in-plane rotated 120 Degree-Sign with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]{beta}-FeSi{sub 2}(431)//[110]Si(001) with four variants, which is hitherto unknown for growing {beta}-FeSi{sub 2}. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between {beta}-FeSi{sub 2} grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of {beta}-FeSi{sub 2}/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of {beta}-FeSi{sub 2}(431)/Si(001) is larger than that on the surface of {beta}-FeSi{sub 2}(220)/Si(111).

  20. SiC nanowires: material and devices

    Science.gov (United States)

    Zekentes, K.; Rogdakis, K.

    2011-04-01

    SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires' growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. SiC nanowires with narrow-diameter (channel material. On the other hand, the grown nanowires are suitable for field-emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in different sections of this paper.

  1. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures.

    Science.gov (United States)

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-12-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree (ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.

  2. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures

    Science.gov (United States)

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-06-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree ( ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.

  3. Study on in-situ Mg2Si/Al-Si composites with different compositions

    Institute of Scientific and Technical Information of China (English)

    Jing Qingxiu; Zhang Caixia; Huang Xiaodong

    2009-01-01

    Effects of chemical composition and heat treatment on microstructures and mechanical properties of in-situ Mg2Si/Al-Si composites were investigated. It was found that, in the microstructure of an Al-5.7wt% Mg2Si composite with 8.2wt% extra Si, the binary eutectic Mg2Si locates at the grain boundaries with an undeveloped Chinese script-like morphology, and the primary α-Al is formed into a cell structure due to the selective modification effect of the modifiers of mischmetal and Strontium salt; whereas in the composite with a near Al-Mg2Si eutectic composition and little extra Si content, the intercrescence eutectic Mg2Si formed with the binary eutectic a-Al grows into integrated Chinese script-like shape. As Si content increases, the eutectic Mg2Si dendrite becomes coarser in morphology but less in volum e fraction. Hardness and tensile strength of the cast Mg2Si/Al-Si composites do not increase with increasing of Mg content, but they are related to the size and morphology of the eutectic and primary Mg2Si phases. Heat treatment with optimal parameters is an effective way to improve the properties of the in-situ composites.

  4. siRNA的应用

    Institute of Scientific and Technical Information of China (English)

    孟立根; 马清河; 王安忠; 秦俊文

    2004-01-01

    RNAi(RNA interference,RNA阻断)当初是在研究绦虫C elegans时观测到的一种现象。当将双链的RNA(double stranded RNA;dsRNA)导人体内后,与这种双链RNA相同性较高的mRNA将被特异性地抑制或者消除。除了绦虫之外,RNAi已被作为一种研究基因功能的有效工具,广泛运用于植物、真菌、线虫、果蝇以及哺乳动物,并获得了好的效果。近来使用短链(21~23碱基对)siRNA(short interfering RNA)也获得了同样的效果。siRNA与传统RNA干涉技术相比具有极大的优越

  5. SiLix-C Nanocomposites

    Science.gov (United States)

    Henry, Francois

    2015-01-01

    For this Phase II project, Superior Graphite Co., in collaboration with the Georgia Institute of Technology and Streamline Nanotechnologies, Inc., developed, explored the properties of, and demonstrated the enhanced capabilities of novel nanostructured SiLix-C anodes. These anodes can retain high capacity at a rapid 2-hour discharge rate and at 0 C when used in Li-ion batteries. In Phase I, these advanced anode materials had specific capacity in excess of 1,000 mAh/g, minimal irreversible capacity losses, and stable performance for 20 cycles at C/1. The goals in Phase II were to develop and apply a variety of novel nanomaterials, fine-tune the properties of composite particles at the nanoscale, optimize the composition of the anodes, and select appropriate binder and electrolytes. In order to achieve a breakthrough in power characteristics of Li-ion batteries, the team developed new nanostructured SiLix-C anode materials to offer up to 1,200 mAh/g at C/2 at 0 C.

  6. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  7. Graphene/Si-nanowire heterostructure molecular sensors

    Science.gov (United States)

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-06-01

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism.

  8. Si isotope homogeneity of the solar nebula

    Energy Technology Data Exchange (ETDEWEB)

    Pringle, Emily A.; Savage, Paul S.; Moynier, Frédéric [Department of Earth and Planetary Sciences and McDonnell Center for the Space Sciences, Washington University in St. Louis, One Brookings Drive, St. Louis, MO 63130 (United States); Jackson, Matthew G. [Department of Earth Science, University of California, Santa Barbara, CA 93109 (United States); Barrat, Jean-Alix, E-mail: eapringle@wustl.edu, E-mail: savage@levee.wustl.edu, E-mail: pringle@ipgp.fr, E-mail: moynier@ipgp.fr, E-mail: jackson@geol.ucsb.edu, E-mail: Jean-Alix.Barrat@univ-brest.fr [Université Européenne de Bretagne, Université de Brest, CNRS UMR 6538 (Domaines Océaniques), I.U.E.M., Place Nicolas Copernic, F-29280 Plouzané Cedex (France)

    2013-12-20

    The presence or absence of variations in the mass-independent abundances of Si isotopes in bulk meteorites provides important clues concerning the evolution of the early solar system. No Si isotopic anomalies have been found within the level of analytical precision of 15 ppm in {sup 29}Si/{sup 28}Si across a wide range of inner solar system materials, including terrestrial basalts, chondrites, and achondrites. A possible exception is the angrites, which may exhibit small excesses of {sup 29}Si. However, the general absence of anomalies suggests that primitive meteorites and differentiated planetesimals formed in a reservoir that was isotopically homogenous with respect to Si. Furthermore, the lack of resolvable anomalies in the calcium-aluminum-rich inclusion measured here suggests that any nucleosynthetic anomalies in Si isotopes were erased through mixing in the solar nebula prior to the formation of refractory solids. The homogeneity exhibited by Si isotopes may have implications for the distribution of Mg isotopes in the solar nebula. Based on supernova nucleosynthetic yield calculations, the expected magnitude of heavy-isotope overabundance is larger for Si than for Mg, suggesting that any potential Mg heterogeneity, if present, exists below the 15 ppm level.

  9. The Si/Si_3N4 Interface and Si/Si_3N4 Submicron Mesa: A Multi-million Atom Molecular Dynamics Study

    Science.gov (United States)

    Bachlechner, Martina E.; Omeltchenko, Andrey; Nakano, Aiichiro; Kalia, Rajiv K.; Vashishta, Priya; Ebbsjö, Ingvar; Madhukar, Anupam

    1998-03-01

    Using molecular dynamics simulations on parallel computers, the interface structure, stress distribution, crack propagation and fracture in a Si_3N4 film on Si substrate are studied. Bulk Si is described by Stillinger-Weber potential and Si_3N4 is represented by a combination of two- and three-body covalent interactions. At the interface, the charge transfer is taken from LCAO electronic structure calculations (G.-L. Zhao and M.E. Bachlechner, Europhys. Lett. 36, 287 (1997)). Results for structural correlations at the interface and 3D stress distribution for the submicron mesa are presented.

  10. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  11. Si3N4-SiC材料的氧化性能研究%Study on Oxidation Performance of Si3N4-SiC

    Institute of Scientific and Technical Information of China (English)

    李杰

    2009-01-01

    通过对不同Si3N4含量、不同温度下Si3N4-SiC材料的氧化实验,分析氧化后的氧化增重率,得出Si3N4含量越高,材料氧化越严重;氧化温度越高,材料氧化越严重;且氧化增重率与氧化时间呈直线-抛物线规律.

  12. One-dimensional Si nanolines in hydrogenated Si(001)

    Science.gov (United States)

    François, Bianco; Köster, Sigrun A.; Owen, James G. H.; Renner, Christoph; Bowler, David R.

    2012-02-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality. Phys. Rev. B, 84, 035328 (2011)

  13. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  14. Nature of visible luminescence of co-sputtered Si-SiO{sub x} systems

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, T.; Becerril Espinoza, F.G.; Goldstein, Y.; Savir, E.; Jedrzejewski, J.; Khomenkova, L.; Korsunska, N.; Yukhimchuk, V

    2003-12-31

    Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO{sub x} systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150 deg. C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30 eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiO{sub x} system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

  15. Optimization of Waveguide Structure for Tunable Optical Switch in Si/SiGe System

    Institute of Scientific and Technical Information of China (English)

    Seongjae Boo; Won-Taek Han

    2003-01-01

    A new electro-optical device using Si/SiGe-system with two parallel ridge waveguides is proposed for optical switching and the optimization of the structure for a single mode operation is investigated.

  16. Recycling of Al-Si die casting scraps for solar Si feedstock

    Science.gov (United States)

    Seo, Kum-Hee; Jeon, Je-Beom; Youn, Ji-Won; Kim, Suk Jun; Kim, Ki-Young

    2016-05-01

    Recycling of aluminum die-casting scraps for solar-grade silicon (SOG-Si) feedstock was performed successfully. 3 N purity Si was extracted from A383 die-casting scrap by using the combined process of solvent refining and an advanced centrifugal separation technique. The efficiency of separating Si from scrap alloys depended on both impurity level of scraps and the starting temperature of centrifugation. Impurities in melt and processing temperature governed the microstructure of the primary Si. The purity of Si extracted from the scrap melt was 99.963%, which was comparable to that of Si extracted from a commercial Al-30 wt% Si alloy, 99.980%. The initial purity of the scrap was 2.2% lower than that of the commercial alloy. This result confirmed that die-casting scrap is a potential source of high-purity Si for solar cells.

  17. Fabrication and characteristics of the nc-Si/c-Si heterojunction MAGFET

    Institute of Scientific and Technical Information of China (English)

    Zhao Xiaofeng; Wen Dianzhong

    2009-01-01

    A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when V_(DS) = -7.0 V, the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor (MAGFET) with an L : W ratio of 2 : 1 is 21.26 mV/T,and that with an L : W ratio of 4 : 1 is 13.88 mV/T. When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L : W ratio of 4 : 1 are in series, their magnetic sensitivity is 22.74 mV/T, which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.

  18. 26Si Excited States via One-Neutron Removal from 27Si Using Radioactive Beam

    Science.gov (United States)

    Chen, J.; Chen, A. A.; Amthor, A. M.; Bazin, D.; Becerril, A. D.; Gade, A.; Galaviz, D.; Glasmacher, T.; Kahl, D.; Lorusso, G.; Matos, M.; Ouellet, C. V.; Pereira, J.; Schatz, H.; Smith, K. M.; Wales, B.; Weisshaar, D.; Zegers, R. G. T.

    2013-03-01

    A measurement of the p(27Si, d)26Si reaction has been performed to study levels of 26Si, with connections to the stellar 25Al(p, γ)26Si reaction rate. A beam of adioactive 27Si of energy 84.3 MeV/A was impinged on a polypropylene foil (CH2) of 180 mg/cm2 in thickness. De-excitation γ-rays were detected with a highly-segmented germanium detector array, in coincidence with the 26Si recoils. Our results are an independent measurement of states used in the energy calibration of other experiments on 26Si structure. They also suggest that the spin-parity of the Ex(26Si) = 6454 keV (Er = 940 keV) state should be 4+ instead of the previously adopted assignment of 0+.

  19. W-Mo-Si/SiC Oxidation Protective Coating for Carbon/Carbon Composites

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A W-Mo-Si/SiC double-layer oxidation protective coating for carbon/carbon (C/C) composites was prepared by a two-step pack cementation technique. XRD (X-ray diffraction) and SEM (scanning electron microscopy)results show that the coating obtained by the first step pack cementation was a thin inner buffer layer of SiC with some cracks and pores, and a new phase of (WxMo1-x)Si2 appeared after the second step pack cementation. Oxidation test shows that, after oxidation in air at 1773 K for 175 h and thermal cycling between 1773 K and room temperature for 18 times, the weight loss of the W-Mo-Si/SiC coated C/C composites was only 2.06%. The oxidation protective failure of the W-Mo-Si/SiC coating was attributed to the formation of some penetrable cracks in the coating.

  20. Behaviour of Oxygen-Implanted and Hydrogen-Implanted SiGe/Si Heterostructures

    Institute of Scientific and Technical Information of China (English)

    安正华; 张苗; 门传玲; 沈勤我; 林梓鑫; 李开成; 林成鲁

    2002-01-01

    For SiGe-on-insulator fabrication, a l00nm SiGe tilm with uniform germanium composition was grown on a Si(l00) substrate using a molecular beam epitaxy system without a graded SiGe buffer layer. The samples were implanted by oxygen ions at an energy of 45kev and a dose of 3 × 1017 cm-2, and annealed for five hours at 1250°C in flowing (Ar + 5% 02) atmosphere with a l00nm oxide protective layer. The result indicates that a buried oxide layer was successfully formed at the interface of SiGe and Si on the substrate. Furthermore,hydrogen was implanted into SiGe at the energy of 62keV and the dose of 6 × 1016 cm-2 to perform a blistering study, which confirmed the feasibility of H-induced layer splitting in SiGe layer.

  1. Characterization of ultrathin SiO 2/Si interface grown by low temperature plasma oxidation

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Ultrathin SiO 2 layers on Si (100) wafers were prepared by plasma oxidation at a low temperature (250℃). The analyses of X-ray photoelectron spectroscopy (XPS) and TEM reveal that the chemical composition of the oxide layer is stoichiometric SiO 2 and the SiO 2/Si interface is abrupt. The thickness of the ultrathin oxide layer obtained from XPS, capacitance-voltage (C-V) and ellipsometry measurements indicate a nonlinear time dependence. The high frequency C-V characterization of MOS structure shows that the fixed charge density in SiO 2 film is about 10 11 cm -2 . It is also shown that the strength of breakdown electrical field of SiO 2 film with 6 nm thickness is of the order of 10 6 Vcm -1 . These properties of the ultrathin SiO 2 layer ensure its application in silicon quantum devices.

  2. Characterization of SiC-SiC composites for accident tolerant fuel cladding

    Science.gov (United States)

    Deck, C. P.; Jacobsen, G. M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H. E.; Back, C. A.

    2015-11-01

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC-SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC-SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  3. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  4. Fabrication and Properties of Ti3SiC2/SiC Composites

    Institute of Scientific and Technical Information of China (English)

    YIN Hongfeng; FAN Qiang; REN Yun; ZHANG Junzhan

    2008-01-01

    Ti3SiC2/SiC composites were fabricated by reactive hot pressing method. Effects of hot pressing temperature, the content and panicle size of SiC on phase composition, densification, mechanical properties and behavior of stress-strain of the composites were investigated. The results showed that:(1)Hot-pressing temperature influenced the phase composition of Ti3SiC2/SiC composites. The flexural strength and fracture toughness of composites increased with hot pressing temperature.(2)It became more difficult for the composites to densify when the content of SiC in composites increased. It need be sintered at higher temperature to get denser composite. The flexural strength and fracture toughness of composites increased when the content of SiC added in composites increased. However, when the content of SiC reached 50 wt%, the flexural strength and fracture toughness of composites decreased due to high content of pore in composites.(3)When the content of SiC was same, Ti3SiC2/SiC composites were denser while the particle size of SiC added in composites is 12.8μm compared with the composites that the particle size of SiC added is 3μm.The flexural strength and fracture toughness of composites increased with the increase of particle size of SiC added in composites.(4)Ti3SiC2/SiC composites were non-brittle fracture at room temperature.

  5. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 {times} 6 {times} 2 mm{sup 3} with a span-to-depth ratio of 10/1.

  6. C-V and DLTS studies of radiation induced Si-SiO2 interface defects

    Science.gov (United States)

    Capan, I.; Janicki, V.; Jacimovic, R.; Pivac, B.

    2012-07-01

    Interface traps at the Si-SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si-SiO2 interface-related defects. Interface related defects (Pb centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.

  7. An efficient Si light-emitting diode based on an n- ZnO/SiO{sub 2}-Si nanocrystals-SiO{sub 2}/p-Si heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Edward; Su, Fu-Hsiang; Shih, Ying-Tsang; Tsai, Hung-Ling; Chen, Ching-Huang; Wu, Mong-Kai; Yang, Jer-Ren; Chen, Miin-Jang, E-mail: mjchen@ntu.edu.t [Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan (China)

    2009-11-04

    Si nanocrystals embedded in a SiO{sub 2} matrix and an n-type Al-doped ZnO (ZnO:Al) layer were applied to improve the external quantum efficiency from Si in n- ZnO/SiO{sub 2}-Si nanocrystals-SiO{sub 2}/p-Si heterojunction light-emitting diodes (LEDs). The Si nanocrystals were grown by low pressure chemical vapor deposition and the ZnO:Al layer was prepared by atomic layer deposition. The n-type ZnO:Al layer acts as an electron injection layer, a transparent conductive window, and an anti-reflection coating to increase the light extraction efficiency. Owing to the spatial confinement of carriers and surface passivation by the surrounding SiO{sub 2}, the Si nanocrystals embedded in the SiO{sub 2} matrix lead to a significant enhancement of the light emission efficiency from Si. An external quantum efficiency up to 4.3 x 10{sup -4} at the wavelength corresponding to the indirect bandgap of Si was achieved at room temperature.

  8. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    Institute of Scientific and Technical Information of China (English)

    冉广照; 孙永科; 陈源; 戴伦; 崔晓明; 张伯蕊; 乔永平; 马振昌; 宗婉华; 秦国刚

    2003-01-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  9. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    Science.gov (United States)

    Ran, Guang-Zhao; Sun, Yong-Ke; Chen, Yuan; Dai, Lun; Cui, Xiao-Ming; Zhang, Bo-Rui; Qiao, Yong-Ping; Ma, Zhen-Chang; Zong, Wan-Hua; Qin, Guo-Gang

    2003-02-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6 times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0 eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48 eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97 eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  10. Microwave Sintering of MoSi2 and SiC/MoSi2 Nanocomposite Ceramics%微波烧结制备MoSi2及SiC/MoSi纳米复合陶瓷

    Institute of Scientific and Technical Information of China (English)

    刘长虹; 艾云龙; 何文

    2012-01-01

    MoSi2 and SiC/MoSi2 nanocomposite ceramics were prepared by microwave sintering. Hybrid heating using SiC as preheating material and reasonable design of heat preservation system realized the fast elevation of temperature of MoSi2 on the low temperature stage, and enhanced the temperature uniformity of MoSi2. The density and mechanical properties tests showed that under the sintering parameters of 1 400℃ and holding 60 min, the properties of pure MoSi2 sample achieved relative density of 93.4% , fracture toughness 4.5 MPa·m1/2, Vickers hardness 10.53 GPa, and bending strength 186 MPa. All the mechanical properties of 10vol. % SiC -MoSi2 were superior to that of pure MoSi2, though the relative density decreased to 90.3%. The temperature of microwave sintering MoSi2 and SiC/ MoSi2 samples decreased 200℃ lower than hot-pressing sintering temperature (1 650℃ ) , but the mechanical properties are actually enhanced greatly, in particular MoSi2sample. Fracture surfaces indicated that compared to hot-pressing sintered samples,the microwave sintered samples presented refined grain size, fine and uniform pore. However the effect of grain refinement of microwave sintering to SiC/MoSi2 is weaken compared to pure MoSi2 sample.%采用微波烧结法制备了MoSi2和10vol% SiC/MoSi2纳米复合陶瓷.通过SiC预加热体的混合式加热法和合理的保温结构设计,实现了MoSi2低温阶段的快速升温,提高了温度均匀性.密度和力学性能测试结果表明,1450℃保温60 min烧结工艺下,MoSi2试样的相对密度达到93.4%,断裂韧度4.5 MPa·ml/2,维氏硬度为10.53 GPa,弯曲强度为186 MPa.10vol% SiC/MoSi2试样尽管相对密度下降为90.3%,但各项力学性能均优于MoSi2试样.相比1650℃热压烧结,微波烧结温度降低了200℃,MoSi2和SiC/MoSi2试样致密性有所下降,但力学性能有较大提高,尤其是MoSi2试样.断口扫描分析表明,微波烧结试样相对热压烧结试样基体晶粒更细,孔隙细

  11. Polycrystalline SiC as source material for the growth of fluorescent SiC layers

    DEFF Research Database (Denmark)

    Kaiser, M.; Hupfer, T.; Jokubavicus, V.;

    2013-01-01

    Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport...

  12. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  13. Microstructure and abrasive wear studies of laser clad Al-Si/SiC composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Colaco, R.; Ocelik, V.; De Hosson, J. Th. M.; Vilar, R.; Gyulai, J; Szabo, PJ

    2007-01-01

    Surface coatings of Al-Si/SiC metal-matrix composites were deposited on Al-7 wt. % Si alloy substrates by laser cladding. The microstructure of the coatings was characterized by optical microscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The microstructure of the coating mate

  14. The effect of biaxial strain on impurity diffusion in Si and SiGe

    DEFF Research Database (Denmark)

    Larsen, Arne Nylandsted; Zangenberg, Nikolaj; Fage-Pedersen, Jacob

    2005-01-01

    Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have...

  15. Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids

    Institute of Scientific and Technical Information of China (English)

    Gong-Ru Lin

    2007-01-01

    The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxidesemiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.

  16. About the International System of Units (SI) Part III. SI Table

    Science.gov (United States)

    Aubrecht, Gordon J., II; French, Anthony P.; Iona, Mario

    2012-01-01

    Before discussing more details of SI, we will summarize the essentials in a few tables that can serve as ready references. If a unit isn't listed in Tables I-IV, it is not part of SI or specifically allowed for use with SI. The units and symbols that are sufficient for most everyday applications are given in bold.

  17. Computer aided cooling curve analysis for Al-5Si and Al-11Si alloys

    African Journals Online (AJOL)

    user

    Aluminium-Silicon (Al-Si) alloys are considered as the most important cast .... of MA1, the melt was stirred gently with zircon coated iron rod and was held for 5 min. ..... and mechanical properties of Al-7Si and Al-7Si-2.5Cu cast alloys, Materials ...

  18. Preparation of Si3N4–SiC composites by microwave route

    Indian Academy of Sciences (India)

    M Panneerselvam; K J Rao

    2002-12-01

    Si3N4–SiC composites have been microwave sintered using -Si3N4 and -SiC as starting materials. Si3N4 rich compositions (95 and 90 vol.% Si3N4) have been sintered above 96% of theoretical density without using any sintering additives in 40 min. A monotonic decrease in relative density is observed with increase in SiC proportion in the composite. Decrease in relative density has manifested in the reduction of fracture toughness and microhardness values of the composite with increase in SiC content although the good sintering of matrix Si3N4 limits the decrease of fracture toughness. Highest value of fracture toughness of 6.1 MPa m1/2 is observed in 10 vol.% SiC composite. Crack propagation appears to be transgranular in the Si3N4 matrix and the toughening of the composites is through crack deflection around hard SiC particles in addition to its debonding from the matrix.

  19. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  20. Silane photoabsorption spectra near the Si 2p thresholds: the geometry of Si 2p excited SiH4

    Institute of Scientific and Technical Information of China (English)

    张卫华; 许如清; 李家明

    2003-01-01

    Based on the multiple-scattering self-consistent-field method, we have studied the photoabsorption spectra near the Si 2p thresholds of silane. According to our calculations, the clear assignments of the inner-shell photoabsorption spectra are provided. In comparison with the high-resolution experimental spectra, the geometric structure of the Si 2p-excited SiH4** is recommended to be of a C2v symmetry. More specifically, the Si 2p-excited Si4** have two bond lengths of 2.50 a.u. and another two bond lengths of 2.77 a.u., and the corresponding two bond angles are 104.0° and 112.5° respectively.

  1. Tunneling magnetoresistance in Si nanowires

    Science.gov (United States)

    Montes, E.; Rungger, I.; Sanvito, S.; Schwingenschlögl, U.

    2016-11-01

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green’s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  2. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  3. Metastability of a-SiOx:H thin films for c-Si surface passivation

    Science.gov (United States)

    Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

    2017-01-01

    The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution

  4. Experimental PDT: studies on new Si-phthalocyanines and Si-naphthalocyanines in Cremophor emulsions

    Science.gov (United States)

    Shopova, Maria; Mantareva, Vanya; Woehrle, Dieter; Mueller, Silke

    1996-12-01

    In the present work the following silicon (IV) - phthalocyanines and -naphthalocyanines bearing methoxyethylene glycol or methoxypolyethylene glycol covalently bound at the silicon are investigated: SiPc[OCH2CH2OCH3]2 (SiPc1), SiNc[OCH2CH2OCH3]2 (SiNc), SiPc[(OCH2CH2)nOCH3] with n approximately 115 (SiPc2). The phototherapeutic effect was shown at Lewis lung carcinoma implanted in mice. SiPc2 is monomeric soluble in water whereas the other two compounds aggregated in this solvent. Therefore these compounds were dissolved monomer in in aqueous Cremophor solution before in vivo administration. Laser irradiation was applied 7 days after implantation and 24 h after drug administration at the following wavelength (eta) ext: 672 nm for SiPc1 and SiPc2, 782 nm for SiNc. In all cases a fluence rate of 370 mW/cm2 at fluence of 360 J/cm2 was used. The assessment criteria for the tumor response were the changes in the mean tumor diameter with time, regrowth delay and average survival time (AST). According to the first parameter the most promising result was obtained after treatment with SiPc1. For example the mean tumor diameter increases as follows: SiPc1 less than SiPc2 less than SiNc very much less than control group without photosensitizer. The regrowth delay showed the same trend. however, for AST another dependence was observed. AST was the longest for SiPc2 (26 days) and shortest for SiNc (22 days). Compared to the control group (without sensitizer and irradiation) the AST was 9 days longer after SiPc2 treatment. Comparing SiPc1 and SiPc2 the chain length of the substituents does not influence the phototherapeutic properties. The detected therapeutic results probably are connected with the long wavelength absorption of the photosensitizers. The relatively lower affectivity of SiNc may be due to a lower degree of tumor accumulation as it was observed in our preliminary pharmacokinetic studies. It is also possible that the shorter AST after treatment with SiNc is

  5. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

    2013-01-01

    Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup...

  6. Synthesis of Hybrid SiC/SiO2 Nanoparticles and Their Polymer Nanocomposites

    Science.gov (United States)

    Hassan, Tarig A.; Rangari, Vijaya K.; Baker, Fredric; Jeelani, Shaik

    2013-04-01

    In the present investigation, silicon carbide (β-SiC) nanoparticles ( 30 nm) were coated on silicon dioxide (SiO2) nanoparticles ( 200 nm) using sonochemical method. The resultant hybrid nanoparticles were then infused into SC-15 epoxy resin to enhance the thermal and mechanical properties of SC-15 epoxy for structural application. To fabricate an epoxy-based nanocomposite containing SiC/SiO2 hybrid nanoparticles, we have opted a two-step process. In the first step, the silica nanoparticles were coated with SiC nanoparticles using high intensity ultrasonic irradiation. In a second step, 1 wt.% of as-prepared SiC/SiO2 particles were dispersed in epoxy part-A (diglycidylether of bisphenol A) using a high intensity ultrasound for 30 min at 5°C. The part-B (cycloaliphatic amine hardener) of the epoxy was then mixed with part-A-SiC/SiO2 mixture using a high-speed mechanical stirrer for 10 min. The SiC/SiO2/epoxy resin mixture was cured at room temperature for 24 h. The SiC nanoparticles coating on SiO2 was characterized using X-ray diffraction (XRD) and high resolution transmission electron microscope (TEM). The as-prepared nanocomposite samples were characterized using thermo gravimetric analysis (TGA) and differential scanning calorimeter (DSC). Compression tests have been carried out for both nanocomposite and neat epoxy systems. The results indicated that 1 wt.% (SiC) + (SiO2) loading derived improvements in both thermal and mechanical properties when compared to the neat epoxy system.

  7. Optical properties of passivated Si nanocrystals and SiO{sub {ital x}} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Dinh, L.N. [Department of Applied Science, University of California, Davis/Livermore, California (United States)]|[Chemistry and Materials Science Department, University of California, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Chase, L.L.; Balooch, M.; Siekhaus, W.J. [Chemistry and Materials Science Department, University of California, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Wooten, F. [Department of Applied Science, University of California, Davis/Livermore, California 94550 (United States)

    1996-08-01

    Thin films of Si nanoclusters passivated with oxygen or hydrogen, with an average size of a few nanometers, have been synthesized by thermal vaporization of Si in an Ar buffer gas, followed by subsequent exposure to oxygen or atomic hydrogen. High-resolution transmission electron microscopy and x-ray diffraction revealed that these nanoclusters were crystalline. However, during synthesis, if oxygen was the buffer gas, a network of amorphous Si oxide nanostructures (an-SiO{sub {ital x}}) with occasional embedded Si dots was formed. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times from nanoseconds to microseconds depending on synthesis conditions. Absorption in the Si cores for surface passivated Si nano- crystals (nc-Si), but mainly in oxygen related defect centers for an-SiO{sub {ital x}}, was observed by photoluminescence excitation spectroscopy. The visible components of PL spectra were noted to blueshift and broaden as the size of the nc-Si was reduced. There were differences in PL spectra for hydrogen and oxygen passivated nc-Si. Many common PL properties between oxygen passivated nc-Si and an-SiO{sub {ital x}} were observed. Our data can be explained by a model involving absorption between quantum confined states in the Si cores and emission for which the decay times are very sensitive to surface and/or interface states. The emission could involve a simple band-to-band recombination mechanism within the Si cores. The combined evidence of all of our experimental results suggests, however, that emission between surface or interface states is a more likely mechanism. {copyright} {ital 1996 The American Physical Society.}

  8. Optical properties of passivated Si nanocrystals and SiOx nanostructures

    Science.gov (United States)

    Dinh, L. N.; Chase, L. L.; Balooch, M.; Siekhaus, W. J.; Wooten, F.

    1996-08-01

    Thin films of Si nanoclusters passivated with oxygen or hydrogen, with an average size of a few nanometers, have been synthesized by thermal vaporization of Si in an Ar buffer gas, followed by subsequent exposure to oxygen or atomic hydrogen. High-resolution transmission electron microscopy and x-ray diffraction revealed that these nanoclusters were crystalline. However, during synthesis, if oxygen was the buffer gas, a network of amorphous Si oxide nanostructures (an-SiOx) with occasional embedded Si dots was formed. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times from nanoseconds to microseconds depending on synthesis conditions. Absorption in the Si cores for surface passivated Si nano- crystals (nc-Si), but mainly in oxygen related defect centers for an-SiOx, was observed by photoluminescence excitation spectroscopy. The visible components of PL spectra were noted to blueshift and broaden as the size of the nc-Si was reduced. There were differences in PL spectra for hydrogen and oxygen passivated nc-Si. Many common PL properties between oxygen passivated nc-Si and an-SiOx were observed. Our data can be explained by a model involving absorption between quantum confined states in the Si cores and emission for which the decay times are very sensitive to surface and/or interface states. The emission could involve a simple band-to-band recombination mechanism within the Si cores. The combined evidence of all of our experimental results suggests, however, that emission between surface or interface states is a more likely mechanism.

  9. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

    Science.gov (United States)

    2015-10-09

    performed extensive growth studies aimed to create entire new families of Ge1-x-ySixSny materials on industrially compatible group IV platforms ( Si , Ge and...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si -compatible materials and devices in the Si -Ge-Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final...4. TITLE AND SUBTITLE Next generation, Si -compatible materials and devices in the Si -Ge-Sn system 5a. CONTRACT NUMBER FA9550-12-1-0208 5b. GRANT

  10. Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

    Institute of Scientific and Technical Information of China (English)

    I.; V.; ANTONOVA; M.; S.; KAGAN; E.; P.; NEUSTROEV; S.; A.; SMAGULOVA

    2009-01-01

    Recharging of quantum confinement levels in SiGe quantum wells (QW) was studied by charge deep-level transient spectroscopy (Q-DLTS) for Si/SiGe/Si structures with different Ge contents in the SiGe layer. A peak with activation energy varying in the range from 0 to 100 meV in different tempera-ture intervals was observed in Q-DLTS spectra. Activation energies extracted from Q-DLTS measure-mens are in good agreement with energies of quantum confinement levels in the QW.

  11. High Efficiency Hybrid Solar Cells Using Nanocrystalline Si Quantum Dots and Si Nanowires.

    Science.gov (United States)

    Dutta, Mrinal; Thirugnanam, Lavanya; Trinh, Pham Van; Fukata, Naoki

    2015-07-28

    We report on an efficient hybrid Si nanocrystal quantum dot modified radial p-n junction thinner Si solar cell that utilizes the advantages of effective exciton collection by energy transfer from nanocrystal-Si (nc-Si) quantum dots to underlying radial p-n junction Si nanowire arrays with excellent carrier separation and propagation via the built-in electric fields of radial p-n junctions. Minimization of recombination, optical, and spectrum losses in this hybrid structure led to a high cell efficiency of 12.9%.

  12. Evaluation of CVI SiC/SiC Composites for High Temperature Applications

    Science.gov (United States)

    Kiser, D.; Almansour, A.; Smith, C.; Gorican, D.; Phillips, R.; Bhatt, R.; McCue, T.

    2017-01-01

    Silicon carbide fiber reinforced silicon carbide (SiC/SiC) composites are candidate materials for various high temperature turbine engine applications because of their high specific strength and good creep resistance at temperatures of 1400 C (2552 F) and higher. Chemical vapor infiltration (CVI) SiC/SiC ceramic matrix composites (CMC) incorporating Sylramic-iBN SiC fiber were evaluated via fast fracture tensile tests (acoustic emission damage characterization to assess cracking behavior), tensile creep testing, and microscopy. The results of this testing and observed material behavior degradation mechanisms are reviewed.

  13. DLC-Si protective coatings for polycarbonates

    Directory of Open Access Journals (Sweden)

    Damasceno J.C.

    2003-01-01

    Full Text Available In this work, a-C:H:Si (DLC-Si films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH4 + SiH4 and C2H2 + SiH4. The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were employed for characterization. By incorporating low concentrations of silicon and by exploring the more favorable conditions for the rf-PACVD deposition technique, highly adherent DLC-Si thin films were produced with reduced internal stresses (lower than 1 GPa, high hardness (around 20 GPa and high deposition rates (up to 10 µm/h. Results that show the technological viability of this material for application as protective coatings for polycarbonates are also discussed.

  14. Biomorphic SiC from lotus root

    Institute of Scientific and Technical Information of China (English)

    Qing Wang; Donghua Wang; Guoqiang Jin; Yingyong Wang; Xiangyun

    2009-01-01

    Biomorphic silicon carbide (bioSiC) with macro-channels and alveolate micropores was prepared by spon-taneous infiltration of melted silicon into a carbon template derived from lotus root at 1600 ℃. The carbon template and purified bioSiC samples were characterized by X-ray diffraction, scanning electron microscopy, camera and mercury intrusion. The results suggest that the bioSiC mainly consists of β-SiC and perfectly replicates the shape and microstructure of the carbon template. The bioSiC has a mean pore diameter of 91.1 μm and a porosity of 50.1%, both similar to those of the carbon template, 92.3 μm and 50.7%, respectively.

  15. PLGA microspheres encapsulating siRNA.

    Science.gov (United States)

    De Rosa, Giuseppe; Salzano, Giuseppina

    2015-01-01

    The therapeutic use of small interfering RNA (siRNA) represents a new and powerful approach to suppress the expression of pathologically genes. However, biopharmaceutical drawbacks, such as short half-life, poor cellular uptake, and unspecific distribution into the body, hamper the development of siRNA-based therapeutics. Poly(lactide-co-glycolide), (PLGA) microspheres can be a useful tool to overcome these issues. siRNA can be encapsulated into the PLGA microspheres, which protects the loaded nucleic acid against the enzymatic degradation. Moreover, PLGA microspheres can be injected directly into the action site, where the siRNA can be released in controlled manner, thus avoiding the need of frequent invasive administrations. The complete biodegradability of PLGA to monomers easily metabolized by the body, and its approval by FDA and EMA for parenteral administration, assure the safety of this copolymer and do not require the removal of the device after the complete drug release. In chapter, a basic protocol for the preparation of PLGA microspheres encapsulating siRNA is described. This protocol is based on a double emulsion/solvent evaporation technique, a well known and easy to reproduce method. This specific protocol has been developed to encapsulate a siRNA anti-TNFα in PLGA microspheres, and it has been designed and optimized to achieve high siRNA encapsulation efficiency and slow siRNA release in vitro. However, it can be extended also to other siRNA as well as other RNA or DNA-based oligonucleotides (miRNA, antisense, decoy, etc.). Depending on the applications, chemical modifications of the backbone and site-specific modification within the siRNA sequences could be required.

  16. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  17. Investigation on The Properties of Fe-Si3N4 Bonded SiC Composite

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; FENG Di; PENG Dayan

    2005-01-01

    The mechanical properties of pressureless sintering Fe-Si3N4 bonded SiC and Si3 N4 bonded SiC with same manufacture process have been compared in this paper.The oxidizing mechanism of Fe-Si3 N4 bonded SiC ceramic matrix composite has been investigated especially through TG-DSC (thermo gravimetric analysis-differential scanning calorimeter) experiment. During oxidation procedure the main reaction is the oxidation of SiC and Si3N4, SiO2 which form protecting film to prevent further oxidizing. And residual iron in the samples become Fe2 O3 and Fe3O4, the oxidation kinetics at 1100 ~ 1300℃ of re-Si3 N4 bonded SiC has been studied especially. The weight gain per unit area at initial stage changes according to beeline rule, in the middle according to conic, and in the last oxidation period follows parabola rule.

  18. Fabrication and measurement of devices in Si/SiGe nanomembranes

    Science.gov (United States)

    Mohr, Robert

    Silicon/silicon-germanium (Si/SiGe) heterostructures are useful as hosts for gated quantum dots. The quality of the as-grown Si/SiGe heterostructure has a large impact on the final quality of the quantum dot as a qubit host. For many years, quantum dots have been fab- ricated on strain-graded heterostructures. Commonly used strain-graded heterostructures inevitably develop plastic defects that lead to interface roughness, crosshatch, and mosaic tilt. All of these factors are sources of disorder in Si/SiGe quantum electronics. In this dissertation, I report the fabrication of Hall bars and gated quantum dots on heterostructures grown on fully elastically relaxed SiGe nanomembranes, rather than strain-graded heterostructures. I report measurements of Hall bars demonstrating the creation of two-dimensional electron gases in these structures. I report the fabrication procedures used to create pairs of Hall bars and quantum dots on individual membranes. In addition, I explain a general process flow for the creation of Si/SiGe quantum devices. I focus especially on an ion-implantation technique I implemented for the fabrication of Hall bars and quantum dots in Si/SiGe heterostructures without modulation doping layers.

  19. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    Science.gov (United States)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  20. Influence of Si content and heat treatment on microstructure of Al-Fe-Si alloys

    Institute of Scientific and Technical Information of China (English)

    Zhao Yuhua; Wang Xiubin; Liu Yulin; Wang Chao

    2014-01-01

    The effect of Si addition and heat treatment on the Al-5wt.%Fe al oy has been investigated by OM, SEM-EDS and XRD. The results show that the Si plays a significant role in refining the primary Al3Fe phase. It was found that the addition of 3.0wt.% Si made the al oy present the finest and wel -distributed primary Al3Fe phase, but the Al3Fe phase almost disappeared when 5wt.% Si was added. With further increase in the Si content, some Fe-rich phases appeared in the inter-grains and coarsened. In addition, the heat treatments exert a significant impact on the microstructural evolution of the Al-5wt.%Fe-5wt.%Si al oy. After heat treatment for 28 hours at 590 ºC, the coarse platelet or blocky Fe-rich phase in Al-5wt.%Fe-5wt.%Si al oys was granulated; the phase transformation from metastable platelet Al3FeSi and blocky Al8Fe2Si to stable Al5FeSi had occurred. With the extension of heat treatment, the Si phase coarsened gradual y.

  1. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  2. 2D SiC/SiC composite for flow channel insert (FCI) application

    Energy Technology Data Exchange (ETDEWEB)

    Yu Haijiao [Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, 47 Yanwachi Street, Changsha 410073 (China); Zhou Xingui, E-mail: zhouxinguilmy@163.com [Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, 47 Yanwachi Street, Changsha 410073 (China); Wang Honglei; Zhao Shuang [Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, 47 Yanwachi Street, Changsha 410073 (China); Wu Yican; Huang Qunying; Zhu Zhiqiang [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Huang Zelan [Chongyi Zhangyuan Tungsten Co. Ltd., Chongyi 341300 (China)

    2010-12-15

    Two-dimensional (2D) silicon carbide fiber reinforced silicon carbide matrix (SiC/SiC) composite suiting for flow channel insert (FCI) application was successfully fabricated by stacking molding-precursor impregnation and pyrolysis (PIP) process. Plain-woven KD-I SiC fiber fabric was used as the reinforcement. SiC coating was deposited as the fiber/matrix interphase layer by chemical vapor deposition (CVD) technique. Mechanical, thermal and electrical properties of the 2D SiC/SiC composite were investigated. The results show that mechanical properties and through thickness thermal conductivity of the 2D KD-I/PIP SiC composite well meet the FCI application requirements; meanwhile, it seems that the electrical conductivity requirement will also be satisfied with a series of improvements.

  3. Synthesis of nickel catalyzed Si/SiC core-shell nanowires by HWCVD

    Science.gov (United States)

    Tong Goh, Boon; Abdul Rahman, Saadah

    2014-12-01

    Si/SiC core-shell nanowires grown on glass substrates by hot-wire chemical vapor deposition were studied. Nickel was used as a catalyst to initiate the growth of these core-shell nanowires and the nanowires were grown at different deposition pressures of 0.5 and 1 mbar. The core of the nanowire was found to be a single crystalline Si. The shell of the nanowire consisted of Si nano-crystallites embedded within an amorphous SiC matrix which was attributed to a radial growth of columnar structures. The Si and SiC nano-crystallites embedded within an amorphous matrix exhibited room-temperature photoluminescence emissions in the range of 400 nm-1 μm. A vapor-solid-solid growth mechanism of these core-shell nanowires is proposed. The effects of the deposition pressure on the properties of the core-shell nanowires are also discussed.

  4. A low temperature processed Si-quantum-dot poly-Si TFT nonvolatile memory device

    Institute of Scientific and Technical Information of China (English)

    Sun Wei

    2013-01-01

    This paper reports on a successful demonstration of poly-Si TFT nonvolatile memory with a much reduced thermal-budget.The TFT uses uniform Si quantum-dots (size ~10 nm and density ~1011 cm-2) asstorage media,obtained via LPCVD by flashing SiH4/H2 at 580 ℃ for 15 s on a Si3N4 surface.The poly-Si grain-enlargement step was shifted after source/drain formation.The NiSix-silicided source/drain enables a fast lateral-recrystallization,and thus grain-enlargement can be accomplished by a much reduced thermal-cycle (i.e.,550 ℃/4 h).The excellent memory characteristics suggest that the proposed poly-Si TFT Si quantum-dot memory and associated processes are promising for use in wider TFT applications,such as system-on-glass.

  5. Quantum Confinement Effects in Strained SiGe/Si Multiple Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Strained SiGe/Si multiple quantum wells (MQWs) were grown by cold-wall ultrahigh vacuum chemical vapor deposition (UHV/CVD). Photoluminescence measurement was performed to study the exciton energies of strained Si0.84 Ge0.16/Si MQWs with SiGe well widths ranging from 4.2nm to 25.4nm. The confinement energy of 43meV is found in the Si0.84Ge0.16/Si MQWs with well width of 4.2nm. The confinement energy was calculated by solving the problem of a particle confined in a single finite rectangular poteintial well using one band effect mass model. Experimental and theoretical confinement energies are in good agreement

  6. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    Science.gov (United States)

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

  7. Transport properties of double-gate SiO{sub 2}-Si-SiO{sub 2} quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Prunnila, Mika; Ahopelto, Jouni [VTT Information Technology, Microelectronics, P.O. Box 1208, 02044 VTT (Finland); Sakaki, Hiroyuki [University of Tokyo, Institute of Industrial Science, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8503 (Japan)

    2005-05-01

    We report on fabrication and low temperature transport properties of double-gate SiO{sub 2}-Si-SiO{sub 2} quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon-on-insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si-SiO{sub 2} interface peak mobility of 1.9 m{sup 2}/Vs (1.0 m{sup 2}/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub-band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi-layers. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

    Directory of Open Access Journals (Sweden)

    Yorinobu Kunimune

    2016-04-01

    Full Text Available We have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO2/SiN/SiO2 (ONO stack structure using ultraviolet laser-assisted atom probe tomography (APT. The concentration of hydrogen atoms detected using APT increased gradually during the analysis, which could be explained by the effect of hydrogen adsorption from residual gas in the vacuum chamber onto the specimen surface. The amount of adsorbed hydrogen in the SiN layer was estimated by analyzing another SiN layer with an extremely low hydrogen concentration (<0.2 at. %. Thus, by subtracting the concentration of adsorbed hydrogen, the actual hydrogen concentration in the SiN layer was quantified as approximately 1.0 at. %. This result was consistent with that obtained by elastic recoil detection analysis (ERDA, which confirmed the accuracy of the APT quantification. The present results indicate that APT enables the imaging of the three-dimensional distribution of hydrogen atoms in actual devices at a sub-nanometer scale.

  9. Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer

    Science.gov (United States)

    Jia, Xiao-Jie; Zhou, Chun-Lan; Zhu, Jun-Jie; Zhou, Su; Wang, Wen-Jing

    2016-12-01

    It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiOyNx layer on interface parameters, such as interface state density Dit and fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance-voltage measurements reveal that inserting a thin SiOyNx layer between the SiNx and the silicon wafer can suppress Qf in the film and Dit at the interface. The positive Qf and Dit and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiOyNx film increasing. Prepared by deposition at a low temperature and a low ratio of N2O/SiH4 flow rate, the SiOyNx/SiNx stacks result in a low effective surface recombination velocity (Seff) of 6 cm/s on a p-type 1 Ω·cm-5 Ω·cm FZ silicon wafer. The positive relationship between Seff and Dit suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA050302) and the National Natural Science Foundation of China (Grant No. 61306076).

  10. p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

    Science.gov (United States)

    Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

    2000-01-01

    A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

  11. Abiologic silicon isotope fractionation between aqueous Si and Fe(III)-Si gel in simulated Archean seawater: Implications for Si isotope records in Precambrian sedimentary rocks

    Science.gov (United States)

    Zheng, Xin-Yuan; Beard, Brian L.; Reddy, Thiruchelvi R.; Roden, Eric E.; Johnson, Clark M.

    2016-08-01

    Precambrian Si-rich sedimentary rocks, including cherts and banded iron formations (BIFs), record a >7‰ spread in 30Si/28Si ratios (δ30Si values), yet interpretation of this large variability has been hindered by the paucity of data on Si isotope exchange kinetics and equilibrium fractionation factors in systems that are pertinent to Precambrian marine conditions. Using the three-isotope method and an enriched 29Si tracer, a series of experiments were conducted to constrain Si isotope exchange kinetics and fractionation factors between amorphous Fe(III)-Si gel, a likely precursor to Precambrian jaspers and BIFs, and aqueous Si in artificial Archean seawater under anoxic conditions. Experiments were conducted at room temperature, and in the presence and absence of aqueous Fe(II) (Fe(II)aq). Results of this study demonstrate that Si solubility is significantly lower for Fe-Si gel than that of amorphous Si, indicating that seawater Si concentrations in the Precambrian may have been lower than previous estimates. The experiments reached ˜70-90% Si isotope exchange after a period of 53-126 days, and the highest extents of exchange were obtained where Fe(II)aq was present, suggesting that Fe(II)-Fe(III) electron-transfer and atom-exchange reactions catalyze Si isotope exchange through breakage of Fe-Si bonds. All experiments except one showed little change in the instantaneous solid-aqueous Si isotope fractionation factor with time, allowing extraction of equilibrium Si isotope fractionation factors through extrapolation to 100% isotope exchange. The equilibrium 30Si/28Si fractionation between Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -2.30 ± 0.25‰ (2σ) in the absence of Fe(II)aq. In the case where Fe(II)aq was present, which resulted in addition of ˜10% Fe(II) in the final solid, creating a mixed Fe(II)-Fe(III) Si gel, the equilibrium fractionation between Fe(II)-Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -3.23 ± 0.37‰ (2σ). Equilibrium

  12. Rapid synthesis of MoSi2-Si3N4 nanocomposite via reaction milling of Si and Mo powder mixture

    Institute of Scientific and Technical Information of China (English)

    Majid Abdellahi; Alireza Amereh; Hamed Bahmanpou; and Behzad Sharafati

    2013-01-01

    The nanocomposite of MoSi2-Si3N4 (molybdenum disilicide-silicon nitride) was synthesized by reaction milling of the Mo and Si powder mixture. Changing the processing parameters led to the formation of diff erent products such asα-andβ-MoSi2, Si3N4, Mo2N, and Mo5Si3 at various milling times. A thermodynamic appraisal showed that the milling of Mo32Si68 powder mixture was associated with highly exothermic mechanically induced self-sustaining reaction (MSR) between Mo and Si. The MSR took place around 5 h of milling led to the formation ofα-MoSi2 and the reaction between Si and N2 to produce Si3N4 under a nitrogen pressure of 1 MPa. By increasing the nitrogen pressure to 5 MPa, more heat is released, resulting in the dissociation of Si3N4 and the transformation ofα-MoSi2 toβ-MoSi2. Heat treatment was also performed on the milled samples and led to the formation of Mo2N and the transformation ofα-MoSi2 toβ-MoSi2 at the milling times of 10 and 40 h, respectively.

  13. X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C60 and Si

    Institute of Scientific and Technical Information of China (English)

    LIU Yan-Fang; LIU Jin-Feng; XU Peng-Shou; PAN Hai-Bin

    2007-01-01

    The formation of silicon carbide upon deposition of C60 and Si on Si(100) surface at 850 ℃ is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction (RHEED). The C 1s, O 1s and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C-SiC.

  14. Effect of hydrogen on passivation quality of SiN{sub x}/Si-rich SiN{sub x} stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    Energy Technology Data Exchange (ETDEWEB)

    Thi, Trinh Cham, E-mail: s1240009@jaist.ac.jp; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-30

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN{sub x}/Si-rich SiN{sub x} stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10{sup 12} cm{sup −2}, which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN{sub x} films deposited with H{sub 2} dilution show better passivation quality of SiN{sub x}/Si-rich SiN{sub x} stacked layers than those prepared without H{sub 2} dilution. Effective minority carrier lifetime (τ{sub eff}) in c-Si passivated by SiN{sub x}/Si-rich SiN{sub x} stacked layers is as high as 5.1 ms when H{sub 2} is added during Si-rich SiN{sub x} deposition, which is much higher than the case of using Si-rich SiN{sub x} films prepared without H{sub 2} dilution showing τ{sub eff} of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN{sub x}/SiN{sub x} stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H{sub 2} gas during Si-rich SiN{sub x} film deposition greatly enhances effective minority carrier lifetime (τ{sub eff}). • For a Si-rich SiN{sub x} film with refractive index of 2.92, τ{sub eff} improves from 3.3 to 5.1 ms by H{sub 2} addition.

  15. p-Cu2O/SiO x /n-SiC/n-Si memory diode fabricated with room-temperature-sputtered n-SiC and SiO x

    Science.gov (United States)

    Yamashita, Atsushi; Tsukamoto, Takahiro; Suda, Yoshiyuki

    2016-12-01

    We investigated low-temperature fabrication processes for our previously proposed pn memory diode with a p-Cu2O/SiC x O y /n-SiC/n-Si structure having resistive nonvolatile memory and rectifying behaviors suitable for a cross-point memory array with the highest theoretical density. In previous fabrication processes, n-SiC was formed by sputtering at 1113 K, and SiC x O y and p-Cu2O were formed by the thermal oxidation of n-SiC and Cu at 1073 and 473 K, respectively. In this study, we propose a pn memory diode with a p-Cu2O/SiO x /n-SiC/n-Si structure, where n-SiC and SiO x layers are deposited by sputtering at room temperature. The proposed processes enable the fabrication of the pn memory diode at temperatures of not more than 473 K, which is used for the formation of p-Cu2O. This memory diode exhibits good nonvolatile memory and rectifying characteristics. These proposed low-temperature fabrication processes are expected to expand the range of fabrication processes applicable to current LSI fabrication processes.

  16. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal.

    Science.gov (United States)

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-04-20

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates.

  17. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal

    Science.gov (United States)

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-04-01

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates.

  18. Si microchannel plates for image intensification

    Science.gov (United States)

    Smith, Arlynn W.; Beetz, Charles P., Jr.; Boerstler, Robert W.; Winn, D. R.; Steinbeck, John W.

    2000-11-01

    Glass microchannel plates (MCPs) have been in use by numerous manufactuers in a variety of electron multiplication applications. Conventional fabrication of MCPs follow the lines of glass drawing and etching technology. Core and clad glass are drawn together, stacked, drawn again, and finally stacked in the desired pattern. The soluble core is removed with wet chemical processing. These techniques are beginning to run into their feasible limits in terms of channel size, open area ratio, uniformity, and material issues. A strong desire exists to fabricate MCPs with accepted lithographic techniques using Si as the base material to improve uniformity and throughput. Open area ratios of as high as 95% have been achieved using lithography. However, attempts to meet other channel plate characteristics met with little success due to thermal runaway or arcing during operation, high voltage is required for electron gain. Processing improvements have lead to the complete oxidation of the Si matrix eliminating the conducting Si in the channel walls of the Si MCPs allowing high voltages to be supported. Complete oxidation of the Si to silica allows processing temperatures high than conventional glass matrices can withstand. This fact allows for high temperature growth of conductive and secondary emissive materials on the channel walls of the structure. Si MCPs with gain have now been fabricated and tested with voltages comparable to conventional glass MCPs. Channel plate characteristics such as operating voltage, strip current, and gain for Si MCPs will be presented and compared to glass MCPs.

  19. The modification behaviour for Si implanted PET

    Institute of Scientific and Technical Information of China (English)

    吴瑜光; 张通和; 刘安东; 张旭; 周固

    2003-01-01

    Polyethylene terephthalate (PET) has been modified by Si ion implantation with a dose ranging from 1 × 1016 to 2 × 1017 ions /cm2 using a metal vapor vacuum arc(MEVVA)source. The surface morphology was observed by atomic force microscopy (AFM). The change in the microstructure of Si implanted PET was observed with a transmission electron microscope (TEM). It is believed that the change would improve the conductive properties and wear resistance. The electrical properties of PET have been improved via Si ion implantation. The resistivity of implanted PET decreased obviously with an increase in ion dose. When Si ion dose was 2 × 1017 cm?2, the resistivity of PET could be less than 7.9 Ω@m. The surface hardness and modulus increased obviously. The mechanical property of the implanted PET has been modified greatly. The hardness and modulus of Si implanted PET with a dose of 2 × 1017/cm2 are 12.5 and 2.45 times greater than those of pristine PET, respectively. The area of cutting groove for Si implanted PET is narrower and shallower than those of the unimplanted PET. So the wear resistance is greatly raised. In comparison with metal ion implantation, the improvement of mechanical properties is obvious in ion implantation into PET. Si ion beam modification mechanism of PET is discussed.

  20. Electronic structure, charge distribution, and charge transfer in α- and β-Si3N4 and at the Si(111)/Si3N4(001) interface

    Science.gov (United States)

    Zhao, G. L.; Bachlechner, M. E.

    1997-02-01

    The electronic structure, charge distribution, and charge transfer in α- and β- Si3N4 and at the Si(111)/Si3N4(001) interface have been studied using a self-consistent first-principles LCAO method. The calculated charge transfer suggests that both in α- and β-phases, the ionic formula may be written as Si3+1.24N4-0.93. For the Si(111)/Si3N4(001) interface, the silicon atoms from the Si(111) side give some electrons to the N atoms of Si3N4 forming the Si-N bonds at the interface. One Si-N bond is associated with a charge transfer of about 0.31 electrons.

  1. Interstitial Functionalization in elemental Si

    Science.gov (United States)

    Kiefer, Boris; Fohtung, Edwin

    Societies in the 21st century will face many challenges. Materials science and materials design will be essential to address and master some if not all of these challenges. Semiconductors are among the most important technological material classes. Properties such as electrical transport are strongly affected by defects and a central goal continues to be the reduction of defect densities as much as possible in these compounds. Here we present results of interstitial Fe doping in elemental Si using first-principles DFT calculations. The preliminary results show that Fe will only occupy octahedral interstitial sites. The analysis of the electronic structure shows that the compounds are ferromagnetic and that a bandgap opens as interstitial Fe concentrations decrease, with a possible intermittent semi-metallic phase. The formation energy for interstitial Fe is unfavorable, as expected, by ~1.5 eV but becomes favorable as the chemical potential of Fe increases. Therefore, we expect that biasing the system with an external electrical field will lead to the formation of these materials. Thus, our results show that interstitial defects can be beneficial for the design of functionalities that differ significantly from those of the host material.

  2. Retrovirus-delivered siRNA

    Directory of Open Access Journals (Sweden)

    Devroe Eric

    2002-08-01

    Full Text Available Abstract Background The ability of transfected synthetic small interfering (si RNAs to suppress the expression of specific transcripts has proved a useful technique to probe gene function in mammalian cells. However, high production costs limit this technology's utility for many laboratories and experimental situations. Recently, several DNA-based plasmid vectors have been developed that direct transcription of small hairpin RNAs, which are processed into functional siRNAs by cellular enzymes. Although these vectors provide certain advantages over chemically synthesized siRNAs, numerous disadvantages remain including merely transient siRNA expression and low and variable transfection efficiency. Results To overcome several limitations of plasmid-based siRNA, a retroviral siRNA delivery system was developed based on commerically available vectors. As a pilot study, a vector was designed to target the human Nuclear Dbf2-Related (NDR kinase. Cells infected with the anti-NDR siRNA virus dramatically downregulate NDR expression, whereas control viruses have no effect on total NDR levels. To confirm and extend these findings, an additional virus was constructed to target a second gene, transcriptional coactivator p75. Conclusion The experiments presented here demonstrate that retroviruses are efficient vectors for delivery of siRNA into mammalian cells. Retrovirus-delivered siRNA provides significant advancement over previously available methods by providing efficient, uniform delivery and immediate selection of stable "knock-down" cells. This development should provide a method to rapidly assess gene function in established cell lines, primary cells, or animals.

  3. Microstructures in Centrifugal Casting of SiCp/AlSi9Mg Composites with Different Mould Rotation Speeds

    Institute of Scientific and Technical Information of China (English)

    WANG Kai; SUN Wenju; LI Bo; XUIE Hansong; LIU Changming

    2011-01-01

    Two ingots were produced by centrifugal casting at mould rotational speeds of 600 rpm and 800 rpm using 20 vol% SiCp/AlSi9Mg composite melt, respectively. The microstructure along the radial direction of cross-sectional sample of ingots was presented. SiC particles migrated towards the external circumference of the tube, and the distribution of SiC particles became uniform under centrifugal force. Voids in 20 vol% SiCp/AlSi9Mg composite melt migrated towards the inner circumference of the tube. The quantitative analysis results indicated that not only SiC particles but also primary a phases segregated greatly in centrifugal casting resulting from the transportation behavior of constitutions with different densities in the SiCp/AlSi9Mg composite melt. In addition, the eutectic Si was broken owing to the motion of SiCp/AlSi9Mg composite melt during centrifugal casting.

  4. Influence of the permeability of networked primary Si on the ejection of hypereutectic Al-Si melts by centrifugation

    Science.gov (United States)

    Youn, Ji Won; Jeon, Je-Beom; Park, Jin Man; Seo, Seok Yong; Lim, Jeon Taik; Kim, Suk Jun; Kim, Ki Young

    2017-02-01

    The separation of high purity Si for solar cells from Al-Si alloy melt in the mushy zone was investigated using an advanced centrifugal technique. The efficiency of separating Si, based on the weight ratio of separated Si to Si in alloy melt, was maximized by optimizing the permeability of a porous structure of Si (Si foam.) For the optimization of the permeability, two fundamental microstructure variables, size and the solid fraction of primary Si platelets, were controlled by adjusting the Si content in the melts and the rotation start temperature, respectively. The best separation efficiency (48.3% with 3N purity) was achieved when Si content in melt was 24% and the solid fraction was 8.7%. The melt with 23% Si led to a higher separation efficiency (69.8%) for a solid fraction of 10.4%, but Al sandwiched between the Si platelets resulted in a decrease in the purity to 2N.

  5. Completely CMOS compatible SiN-waveguide-based fiber coupling structure for Si wire waveguides.

    Science.gov (United States)

    Maegami, Yuriko; Okano, Makoto; Cong, Guangwei; Ohno, Morifumi; Yamada, Koji

    2016-07-25

    For Si wire waveguides, we designed a highly efficient fiber coupling structure consisting of a Si inverted taper waveguide and a CMOS-compatible thin SiN waveguide with an SiO2 spacer inserted between them. By using a small SiN waveguide with a 310 nm-square core, the optical field can be expanded to correspond to a fiber with a 4.0-μm mode field diameter. A coupled waveguide system with the SiN waveguide and Si taper waveguide can provide low-loss and low-polarization-dependent mode conversion. Both losses in fiber-SiN waveguide coupling and SiN-Si waveguide mode conversion are no more than 1 dB in a wide wavelength bandwidth from 1.36 μm to 1.65 μm. Through a detailed analysis of the effective refractive indices in the coupled waveguide system, we can understand mode conversion accurately and also derive guidelines for reducing the polarization dependence and for shortening device length.

  6. HREM study on stacking structure of SiGe/Si infrared detector

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Stacking structure and defects in SiGe/P-Si infrared detector were studied by using localization high resolutionelectron microscopy (HREM). The photosensitive region in the detector consists of 3 P+-Si0.65 Ge0.35 layers and 2 UD-Si(undoped Si) layers. The interface between Si0.65 Ge0.35 and UD-Si is not sharp and has a transition zone with non-uniform contrast. The misfit stress of interface is distributed gradiently along the normal direction of the interface. Thereforethe crystal defects and serious lattice deformations on the interface have not been found. A defect area with a shape of in-verted triangle exists in the edge of photosensitive region. The main types of the defects in the area are stacking faults andmicrotwins. The stacking faults are on ( 1 11), and the thickness of the most microtwins is less than 4 interplanar spacingand the twin plane is (111). The Si0.65Ge0.35 and UD-Si layers on amorphous SiO2 layer consist of polycrystals grown byrandom nueleation, and are in wave

  7. Formation of light-emitting Si nanostructures in SiO(2) by pulsed anneals.

    Science.gov (United States)

    Kachurin, G A; Cherkova, S G; Marin, D V; Yankov, R A; Deutschmann, M

    2008-09-03

    Intense excimer laser pulses, flash lamp annealing and rapid thermal annealing were used to form Si nanocrystals in thin SiO(2) layers implanted with high doses of Si ions. The pulse durations were 20 ns, 20 ms and 1 s, respectively. Laser annealing produced light sources luminescing in the wavelength range of 400-600 nm. They were attributed to the Si clusters formed as a result of the fast segregation of Si atoms from the SiO(2) network. There were no indications of nanocrystal formation in the as-implanted layers after 20 ns laser pulses; however, nanocrystals formed when, before the laser annealing, the amorphous Si nanoprecipitates were prepared in the oxide layers. Evaluations show that the crystallization may proceed via melting. A photoluminescence band near 800 nm, typical of Si nanocrystals, was found after 20 ms and 1 s anneals. Calculations revealed that the annealing times in both cases were too short to provide the diffusion-limited crystal growth if one uses the values of stationary Si diffusivity in SiO(2). This points toward the existence of a transient rapid growth process at the very beginning of the anneals.

  8. Formation of light-emitting Si nanostructures in SiO{sub 2} by pulsed anneals

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G A; Cherkova, S G; Marin, D V [Institute of Semiconductor Physics SO RAN, 630090 Novosibirsk (Russian Federation); Yankov, R A [Forschungszentrum Rossendorf, 01314 Dresden (Germany); Deutschmann, M [Laser Zentrum Hannover, 30419 Hannover (Germany)

    2008-09-03

    Intense excimer laser pulses, flash lamp annealing and rapid thermal annealing were used to form Si nanocrystals in thin SiO{sub 2} layers implanted with high doses of Si ions. The pulse durations were 20 ns, 20 ms and 1 s, respectively. Laser annealing produced light sources luminescing in the wavelength range of 400-600 nm. They were attributed to the Si clusters formed as a result of the fast segregation of Si atoms from the SiO{sub 2} network. There were no indications of nanocrystal formation in the as-implanted layers after 20 ns laser pulses; however, nanocrystals formed when, before the laser annealing, the amorphous Si nanoprecipitates were prepared in the oxide layers. Evaluations show that the crystallization may proceed via melting. A photoluminescence band near 800 nm, typical of Si nanocrystals, was found after 20 ms and 1 s anneals. Calculations revealed that the annealing times in both cases were too short to provide the diffusion-limited crystal growth if one uses the values of stationary Si diffusivity in SiO{sub 2}. This points toward the existence of a transient rapid growth process at the very beginning of the anneals.

  9. Formation of light-emitting Si nanostructures in SiO2 by pulsed anneals

    Science.gov (United States)

    Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Yankov, R. A.; Deutschmann, M.

    2008-09-01

    Intense excimer laser pulses, flash lamp annealing and rapid thermal annealing were used to form Si nanocrystals in thin SiO2 layers implanted with high doses of Si ions. The pulse durations were 20 ns, 20 ms and 1 s, respectively. Laser annealing produced light sources luminescing in the wavelength range of 400-600 nm. They were attributed to the Si clusters formed as a result of the fast segregation of Si atoms from the SiO2 network. There were no indications of nanocrystal formation in the as-implanted layers after 20 ns laser pulses; however, nanocrystals formed when, before the laser annealing, the amorphous Si nanoprecipitates were prepared in the oxide layers. Evaluations show that the crystallization may proceed via melting. A photoluminescence band near 800 nm, typical of Si nanocrystals, was found after 20 ms and 1 s anneals. Calculations revealed that the annealing times in both cases were too short to provide the diffusion-limited crystal growth if one uses the values of stationary Si diffusivity in SiO2. This points toward the existence of a transient rapid growth process at the very beginning of the anneals.

  10. Microstructural characteristics of in situ Mg2Si/Al-Si composite by low superheat pouring

    Directory of Open Access Journals (Sweden)

    Wu Xiaofeng

    2013-09-01

    Full Text Available To control the morphology and size of the primary and eutectic Mg2Si phases in in situ Mg2Si/Al-Si composite and achieve a feasible and reliable technique to produce appropriate feedstock for the thixo-casting and rheo-casting of this type of material, three Al-Si matrix composites reinforced by 5wt.%, 9wt.% and 17wt.% Mg2Si with hypoeutectic, eutectic and hypereutectic compositions were prepared by the low superheat pouring (LSP process. The effects of the pouring temperature (superheat on the morphology and size distribution of primary phases (primary α-Al and Mg2Si, binary (α-Al + Mg2Si eutectic cell and eutectic Mg2Si were investigated. The experimental results show that low pouring temperature (superheat not only refines the grain structure of the primary α-Al and binary (α-Al + Mg2Si eutectic cell in three composites and promotes the formation of more non-dendritic structural semi-solid metal (SSM slurry of these phases; but also refines the primary and eutectic Mg2Si phases, which seems to be attributed to the creation of an ideal condition for the nucleation and the acquisition of a high survival of nuclei caused by the LSP process.

  11. Wear mechanism for spray deposited Al-Si/SiCp composites under dry sliding condition

    Institute of Scientific and Technical Information of China (English)

    滕杰; 李华培; 陈刚

    2015-01-01

    Al-Si/15%SiCp (volume fraction) composites with different silicon contents were fabricated by spray deposition technique, and typical microstructures of these composites were studied by optical microscopy (OM). Dry sliding wear tests were carried out using a block-on-ring wear machine to investigate the effect of applied load range of 10−220 N on the wear and friction behavior of these composites sliding against SAE 52100 grade bearing steel. Scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDAX) were utilized to examine the morphologies of the worn surfaces in order to observe the wear characteristics and investigate the wear mechanism. The results show that the wear behavior of these composites is dependent on the silicon content in the matrix alloy and the applied load. Al-Si/15%SiCp composites with higher silicon content exhibit better wear resistance in the applied load range. Under lower loads, the major wear mechanisms are oxidation wear and abrasive wear for all tested composites. Under higher loads, severe adhesive wear becomes the main wear mechanisms for Al-7Si/15%SiCp and Al-13Si/15%SiCp composites, while Al-20Si/15%SiCp presents a compound wear mechanism, consisting of oxidation, abrasive wear and adhesion wear.

  12. Oxidation of TaSi2 thin films on polycrystalline Si

    Science.gov (United States)

    Nguyen Tan, T. A.; Guerfi, N.; Veuillen, J. Y.; Derrien, J.

    1990-01-01

    XPS and UPS have been used for studying the oxidation of TaSi2 films formed by annealing, under ultrahigh-vacuum, of Ta deposits (≈70Å) on polycrystalline Si. Oxidation has been carried out at room-temperature and at 700°C with an oxygen pressure of 2×10-5 mbar. Both Ta and Si react with oxygen. At room-temperature, O chemisorbs on the surface giving a mixed phase of Si suboxides and Ta oxides (TaO, TaO2 and Ta2O5). At 700°C, a very thin Ta2O5 layer (<0.1 monolayer) is formed on top of the growing SiO2 layer. In comparison with Si(111), the oxidation kinetics of TaSi2 begins with a higher transitory rate and follows afterwards the same parabolic dependence of the SiO2 thickness as a function of oxidation time. UPS spectra indicate a higher density of interface states, in comparison with that of SiO2 on Si. The XPS valence band testifies that the electronic structure of the underlying TaSi2 is preserved after oxidation. Subsequent heating of the sample leads to the progressive decomposition of SiO2, at T ≳ 750°C, while the upper Ta2O5 layer is not affected. The results are discussed in relation to thermodynamic properties of Si and Ta oxides, and compared with existing results given by macroscopic methods.

  13. Process-Induced Carbon and Sub-Layer in SiC/BN/SiC Composites: Characterization and Consequences

    Science.gov (United States)

    Ogbuji, L. U. J. T; Wheeler, D. R.; McCue, T. R.

    2001-01-01

    Following our detection of films of elemental carbon in the Hi-Nicalon TM/BN/SiC composite and its deleterious effect on oxidative durability, we have examined other SiC/BN/SiC systems. The problem is pervasive, and significant residues of free carbon are confirmed in Sylramic /BN/SiC materials. Effective techniques for routine detection and characterization of adventitious carbon in SiC/BN/SiC composites are discussed.

  14. Growth and photoluminescence of Si-SiOx nanowires by catalyst-free chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yue [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Luo, Ruiying, E-mail: ryluo@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); School of Materials Science and Engineering, Shanxi University of Technology, Hanzhong 723000 (China); Shang, Haidong [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China)

    2016-04-15

    Graphical abstract: - Highlights: • The Si-SiOx NWs were successfully synthesized via a one-step catalyst-free CVD method using TEOS as the precursor. • The Si-SiOx NWs had a core–shell structure with Si as the inner crystalline cores and SiOx as the outer amorphous layer. • The formation of Si-SiOx NWs was implemented by the non-classical crystallization mechanism. • The Si-SiOx NWs spontaneously self-assembled from the building block of charged nanoparticles. • The Si-SiOx NWs showed their potential applications in UV emission and visible light emission devices. - Abstract: We developed a one-step catalyst-free chemical vapor deposition process to synthesize Si-SiOx nanowires using tetraethoxysilane as the precursor. Observations using scanning electron microscopy showed that the Si-SiOx nanowires were 20–50 nm in diameter and tens of microns in length. The high-resolution transmission electron microscope analysis and X-ray diffraction demonstrated that the nanowires consisted of crystal silicon and amorphous SiOx. The Si and O with an atomic ratio of the Si-SiOx NWs were 1:1.2 according to the energy dispersion X-ray spectroscope. A systematic study on the effect of the growth conditions, such as reaction temperature, the reaction time, and the TEOS vapor flow rate was performed. The formation of Si-SiOx nanowires was implemented by the non-classical crystallization mechanism. The charged nanoparticles acting as building blocks self-assembled into nanowires. The photoluminescence measurements were carried out and showed that the Si-SiOx nanowires emitted stable ultraviolet and green luminescence excited by ultraviolet light.

  15. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  16. Large area and depth-profiling dislocation imaging and strain analysis in Si/SiGe/Si heterostructures.

    Science.gov (United States)

    Chen, Xin; Zuo, Daniel; Kim, Seongwon; Mabon, James; Sardela, Mauro; Wen, Jianguo; Zuo, Jian-Min

    2014-10-01

    We demonstrate the combined use of large area depth-profiling dislocation imaging and quantitative composition and strain measurement for a strained Si/SiGe/Si sample based on nondestructive techniques of electron beam-induced current (EBIC) and X-ray diffraction reciprocal space mapping (XRD RSM). Depth and improved spatial resolution is achieved for dislocation imaging in EBIC by using different electron beam energies at a low temperature of ~7 K. Images recorded clearly show dislocations distributed in three regions of the sample: deep dislocation networks concentrated in the "strained" SiGe region, shallow misfit dislocations at the top Si/SiGe interface, and threading dislocations connecting the two regions. Dislocation densities at the top of the sample can be measured directly from the EBIC results. XRD RSM reveals separated peaks, allowing a quantitative measurement of composition and strain corresponding to different layers of different composition ratios. High-resolution scanning transmission electron microscopy cross-section analysis clearly shows the individual composition layers and the dislocation lines in the layers, which supports the EBIC and XRD RSM results.

  17. Preparation and Characterization of Novel Porous Fe-Si Alloys

    Institute of Scientific and Technical Information of China (English)

    WANG Jiefeng; HE Yuehui; JIANG Yao; GAO Hanyan; YANG Junsheng; GAO Lin

    2016-01-01

    Porous Fe-Si alloys with different nominal compositions ranging from Fe-10wt% Si to Fe-50wt% Si were fabricated through a reactive synthesis of Fe and Si elemental powder mixtures. The effects of Si contents on the pore structure of porous Fe-Si alloy were investigated in detail. The results showed that the open porosity, gas permeability and maximum pore size of the porous Fe-Si alloys increased with increasing Si contents, indicating that the porosity and pore size can be tailored by changing the Si contents. The pore structure parameter including the open porosity, gas permeability, maximum pore size obeyed the Hagen-Poiseuille formula with the constant G=0.035 m-1Pa-1s-1 for the reactively synthesized porous Fe-Si alloys. The mechanical property of the porous Fe-Si alloys showed applicability in the ifltration industries.

  18. Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures

    Science.gov (United States)

    Jiang, Ran; Han, Zuyin; Sun, Weideng; Du, Xianghao; Wu, Zhengran; Jung, Hyung-Suk

    2015-10-01

    Ferroelectric-field-effect-tunable modulation of terahertz waves in graphene/Si:HfO2/Si stack structure was observed. The modulation shows distinct behaviors when the samples under different gate polarities. At a negative voltage, a transmission modulation depth up to ˜74% was present without depending on the photo illumination power, whereas, at a positive voltage, the modulation of Thz wave shows dependence on the illumination power, which is ascribed to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 on Si-based semiconductor process, the ferroelectricity layer of Si:HfO2 may open up an avenue for the tunable modulation of Thz wave.

  19. Advanced Environmental Barrier Coatings Developed for SiC/SiC Composite Vanes

    Science.gov (United States)

    Lee, Kang N.; Fox, Dennis S.; Eldridge, Jeffrey I.; Zhu, Dongming; Bansal, Narottam P.; Miller, Robert A.

    2003-01-01

    Ceramic components exhibit superior high-temperature strength and durability over conventional component materials in use today, signifying the potential to revolutionize gas turbine engine component technology. Silicon-carbide fiber-reinforced silicon carbide ceramic matrix composites (SiC/SiC CMCs) are prime candidates for the ceramic hotsection components of next-generation gas turbine engines. A key barrier to the realization of SiC/SiC CMC hot-section components is the environmental degradation of SiC/SiC CMCs in combustion environments. This is in the form of surface recession due to the volatilization of silica scale by water vapor. An external environmental barrier coating (EBC) is a logical approach to achieve protection and long-term durability.

  20. Characterization of Si and C implantation induced defects in 4H-SiC

    Science.gov (United States)

    Kummari, Venkata; Dhoubhadel, Mangal; Rout, Bibhudutta; Reinert, Tilo; Spemann, Daniel; Jiang, Weilin; McDaniel, Floyd

    2011-10-01

    Silicon Carbide is considered to be a promising material for dilute magnetic semiconductors (DMSs). Past experimental studies reveal that ferromagnetism can be observed in SiC diluted with 3d transition metals. Recent studies, based on first principle calculations, show that for SiC monolayers, the presence of silicon vacancies (VSi) may induce local magnetization. However, no spin polarization occurs for carbon vacancies (VC), Si+C divacancies, and Si-C antisite defects. Ion implantation is an excellent technique to create vacancies for defect induced magnetism. We have implanted Si and C into 4H-SiC at low energy 60 keV to study the implantation defects for different fluences which corresponds to different percentages of simulated damages (e.g. 10 -- 60 %) obtained using Monte-Carlo simulations code SRIM/TRIM-2008. Defect disorder after ion implantation has been investigated using Rutherford Backscattering Spectrometry/Channeling (RBS/C) and Raman spectroscopy.

  1. The Effect of Si Morphology on Machinability of Al-Si Alloys

    Directory of Open Access Journals (Sweden)

    Muhammet Uludağ

    2015-12-01

    Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

  2. Modification effect of lanthanum on primary phase Mg2Si in Mg-Si alloys

    Institute of Scientific and Technical Information of China (English)

    WANG Liping; GUO Erjun; MA Baoxia

    2008-01-01

    The modifying effect of La addition on primary phase Mg2Si in Mg-5Si alloys was investigated. The results showed that a proper amount of La could effectively modify the primary phase Mg2Si. Based on the present experiment, the optimal modification effect was obtained with an addition of about 0.5 wt.% La. The size of the primary phase Mg2Si was considerably reduced to 25 μm or less and the morphology was modified from a coarse dendritic shape to a polyhedral shape. However, when the addition of La increased to 0.8 wt.% or higher, the primary Mg2Si grew into a coarse dendritic morphology again. Moreover, it was found that some LaSi2 compounds were formed during solidification and the amount of the compounds appeared to increase gradually with increasing La content.

  3. SiC/Si{sub 3}N{sub 4} nanotubes from peanut shells

    Energy Technology Data Exchange (ETDEWEB)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, C.R. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington D.C., 20375 (United States)

    2016-06-15

    Nanotubes and nanoparticles of SiC and Si{sub 3}N{sub 4} were produced from the thermal treatment of peanut shells in argon and nitrogen atmospheres respectively, at temperatures in excess of 1350°C. Using x-ray diffraction, Raman spectroscopy and transmission electron microscopy analysis, the processed samples in argon atmosphere were shown to consist of 2H and 3C polytypes of SiC nanoparticles and nanotubes. Whereas the samples prepared in nitrogen atmosphere consisted of α-phase of Si{sub 3}N{sub 4}. Nanostructures formed by a single direct reaction provide a sustainable synthesis route for nanostructured SiC and Si{sub 3}N{sub 4}, for potential engineering applications due to their exceptional mechanical and electro-optic properties.

  4. Light absorption mechanism in single c-Si (core)/a-Si (shell) coaxial nanowires.

    Science.gov (United States)

    Liu, W F; Oh, J I; Shen, W Z

    2011-03-25

    We have carried out detailed investigations on the light absorption mechanism in single crystalline silicon (c-Si) (core)/amorphous Si (a-Si) (shell) coaxial nanowires (NWs). Based on the Lorenz-Mie light scattering theory, we have found that the light absorption in the coaxial NWs relies on the leaky mode resonances and that the light absorption can be optimized towards photovoltaic applications when the a-Si shell thickness is about twice the c-Si core radius. The photocurrent has been found to be enhanced up to ∼ 560% compared to c-Si NWs, and to be further enhanced up to ∼ 60% by coating the nonabsorbing dielectric shells.

  5. Si3N4-SiC材料的腐蚀性能研究

    Institute of Scientific and Technical Information of China (English)

    李杰

    2009-01-01

    利用Si3N4-SiC材料在冰晶石静态融盐电解质中的腐蚀实验研究材料的腐蚀性能,对腐蚀增重率进行记录分析,Si3N4的含量以及腐蚀时间都是影响Si3N4-SiC材料腐蚀性能的重要因素,腐蚀过程主要发生在25h前,并且随着Si3N4的含量增加,腐蚀程度越严重.

  6. Effects of proton implantation on amorphous SiO sub 2 predamaged by Si implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, Tetsuo; Iwayama-Shimizu, Tsutomu; Itoh, Noriaki (Nagoya Univ. (Japan). Dept. of Physics); Fukui, Minoru; Okada, Syunji

    1990-10-01

    The effects of H implantation on amorphous SiO{sub 2} preimplanted with Si have been studied through electron paramagnetic resonance (EPR). It is shown that both the width and intensity of the EPR spectra of the E'{sub 1} centres generated by Si implantation increase upon H implantation, in contrast to the results for Ar and succeeding H implantation. The difference is ascribed to the difference in the effective cross section of annihilation under proton implantation of the E'{sub 1} centres in Si-and Ar-implanted SiO{sub 2}. The result supports the previously proposed model in which the combination of Si and interstitial O reduces the annihilation of the E'{sub 1} centres. (author).

  7. Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters

    Institute of Scientific and Technical Information of China (English)

    ZHOU Bing-Qing; LIU Feng-Zhen; ZHANG Qun-Fang; XU Ying; ZHOU Yu-Qin; LIU Jin-Long; ZHU Mei-Fang

    2006-01-01

    The p-type microcrystalline silicon (fj,c-Si) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the pc-Si:H p-layers on the performance of the heterojunction solar cells is investigated. Optimum μcSi:H p-layer is obtained with hydrogen dilution ratio of 99.65%, rf-power of 0.08 W/cm2, gas phase doping ratio of 0.125%, and the p-layer thickness of 15 nm. We fabricate μc-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.

  8. Determination of the SiO(2)/Si interface roughness by diffuse reflectance measurements.

    Science.gov (United States)

    Roos, A; Bergkvist, M; Ribbing, C G

    1988-11-15

    The problem of determining the roughness of the SiO(2)/Si interface is treated. A model is used based on the Fresnel formalism and scalar scattering theory. The resulting formulas express the diffuse reflectance as a function of the optical constants of the two materials, the oxide thickness and the rms roughness of the interfaces. Using the roughness values as adjustable parameters, quantitative information about the interface roughness is obtained from the diffuse reflectance spectra for an SiO(2)/Si double layer. Excellent agreement between calculated and experimental spectra is obtained for an rms roughness of 9.0 nm at the front surface and 2.2 nm at the oxide substrate interface for the case of a low-pressure low-temperature CVD film of SiO(2) on Si.

  9. Si-based Nanoparticles: a biocompatibility study

    Science.gov (United States)

    Rivolta, I.; Lettiero, B.; Panariti, A.; D'Amato, R.; Maurice, V.; Falconieri, M.; Herlein, N.; Borsella, E.; Miserocchi, G.

    2010-10-01

    Exposure to silicon nanoparticles (Si-NPs) may occur in professional working conditions or for people undergoing a diagnostic screening test. Despite the fact that silicon is known as a non-toxic material, in the first case the risk is mostly related to the inhalation of nanoparticles, thus the most likely route of entry is across the lung alveolar epithelium. In the case of diagnostic imaging, nanoparticles are usually injected intravenously and Si-NPs could impact on the endothelial wall. In our study we investigated the interaction between selected Si-based NPs and an epithelial lung cell line. Our data showed that, despite the overall silicon biocompatibility, however accurate studies of the potential toxicity induced by the nanostructure and engineered surface characteristics need to be accurately investigated before Si nanoparticles can be safely used for in vivo applications as bio-imaging, cell staining and drug delivery.

  10. Half-life of 31Si

    CERN Document Server

    D'Agostino, Giancarlo; Mana, Giovanni; Oddone, Massimo

    2016-01-01

    Half-life values are widely used in nuclear chemistry to model the exponential decay of the quantified radionuclides. The analysis of existing data reveals a general lack of information on the performed experiments and an almost complete absence of uncertainty budgets. This is the situation for 31Si, the radionuclide produced via neutron capture reaction recently used to quantify trace amounts of 30Si in a sample of the silicon material highly enriched in 28Si and used for the determination of the Avogadro constant. In order to improve the quality of the now recommended 157.36(26) min value, we carried out repeated observations of the 31Si decay rate via gamma-ray spectrometry measurements. This paper reports the result we obtained, including details of the experiment and the evaluation of the uncertainty.

  11. Refractive index spectral dependence, Raman and transmission spectra of high-purity $^{28}$Si, $^{29}$Si, $^{30}$Si, and $^{nat}$Si single crystals

    CERN Document Server

    Plotnichenko, V G; Kryukova, E B; Koltashev, V V; Sokolov, V O; Dianov, E M; Gusev, A V; Gavva, V A; Kotereva, T V; Churbanov, M F

    2011-01-01

    Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of $2 \\times 10^{-5} ... 1 \\times 10^{-4}$. The oxygen and carbon concentrations in all crystals are within $5 \\times 10^{15}$ cm$^{-3}$ and the content of metal impurities is $10^{-5} ... 10^{-6}$ at.%. The peculiar changes of the refractive index in the phonon absorption region of all silicon single crystals are shown. The coefficients of generalized Cauchy dispersion function approximating the experimental refractive index values all over the measuring range are given. The transmission and Raman spectra are also studied.

  12. Cu2ZnSiS4

    Directory of Open Access Journals (Sweden)

    Kimberly A. Rosmus

    2011-04-01

    Full Text Available Single crystals of Cu2ZnSiS4, dicopper(I zinc silicon tetrasulfide, have been prepared via high-temperature solid-state synthesis. Cu2ZnSiS4 was found to have the wurtz-stannite structure type, like that of Li2CdGeS4, Li2CdSnS4, and Cu2CdSiS4. Each sulfur anion is tetrahedrally coordinated by two Cu cations, one Si cation, and one Zn cation, forming a three-dimensional honeycomb structure. When viewed along the c axis, the atoms are aligned in rows in which each cation alternates with the sulfur anions.

  13. Straight SiO_x nanorod Yjunctions

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Novel straight silicon oxide [SiOx (1Si plate by thermal evaporation of mixed powders of silica and carbon nanofibers at 1300℃ and condensation on a Si substrate without assistance of any catalyst. The synthesized samples were characterized by means of scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy. The results suggested that the straight nanorod Y junctions are amorphous and consist only of elements Si and O, and these rods with diameters about 50―200 nm have a neat smooth surface. The growth of such silicon oxide nanorods may be a result of the second nucleation on the surface of rods causing a change in the growth direc- tion of silicon oxide nanorods developed.

  14. Chemisorption of Au on Si(001) surface

    Institute of Scientific and Technical Information of China (English)

    Wei Shu-Yi; Wang Jian-Guang; Ma Li

    2004-01-01

    @@ The chemisorption of one monolayer of Au atoms on an ideal Si(001) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of the adsorption system of a Au atom on different sites are calculated. It is found that the most stable position is A site (top site) for the adsorbed Au atoms above the Si(001)surface. It is possible for the adsorbed Au atoms to sit below the Si(001) surface at the B1 site(bridge site), resulting in a Au-Si mixed layer. This is in agreement with the experiment results. The layer projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated.

  15. La3Si6N11

    Directory of Open Access Journals (Sweden)

    Hisanori Yamane

    2014-06-01

    Full Text Available Colorless transparent single crystals of trilanthanum hexasilicon undecanitrogen, La3Si6N11, were prepared at 0.85 MPa of N2 and 2273 K. The title compound is isotypic with Sm3Si6N11. Silicon-centered nitrogen tetrahedra form a three-dimensional network structure by sharing their corners. Layers of one type of SiN4 tetrahedra and slabs composed of the two different La3+ cations and the other type of SiN4 tetrahedra are alternately stacked along the c axis of the tetragonal unit cell. The site symmetries of the two La3+ cations are are ..m and 4.., respectively.

  16. Disilicon complexes with two hexacoordinate Si atoms: paddlewheel-shaped isomers with (ClN4 )Si-Si(S4 Cl) and (ClN2 S2 )Si-Si(S2 N2 Cl) skeletons.

    Science.gov (United States)

    Wagler, Jörg; Brendler, Erica; Heine, Thomas; Zhechkov, Lyuben

    2013-10-11

    The reaction of 1-methyl-3-trimethylsilylimidazoline-2-thione with hexachlorodisilane proceeds toward substitution of four of the disilane Cl atoms during the formation of disilicon complexes with two neighboring hexacoordinate Si atoms. The N,S-bidentate methimazolide moieties adopt a buttressing role, thus forming paddlewheel-shaped complexes of the type ClSi(μ-mt)4 SiCl (mt=methimazolyl). Most interestingly, three isomers (i.e., with (ClN4 )SiSi(S4 Cl), (ClN3 S)SiSi(S3 NCl), and (ClN2 S2 )SiSi(S2 N2 Cl) skeletons as so-called (4,0), (3,1), and cis-(2,2) paddlewheels) were detected in solution by using (29) Si NMR spectroscopic analysis. Two of these isomers could be isolated as crystalline solids, thus allowing their molecular structures to be analyzed by using X-ray diffraction studies. In accord with time-dependent NMR spectroscopy, computational analyses proved the cis-(2,2) isomer with a (ClN2 S2 )SiSi(S2 N2 Cl) skeleton to be the most stable. The compounds presented herein are the first examples of crystallographically evidenced disilicon complexes with two SiSi-bonded octahedrally coordinated Si atoms and representatives of the still scarcely explored class of Si coordination compounds with sulfur donor atoms.

  17. Hot-wire synthesis of Si nanoparticles

    CSIR Research Space (South Africa)

    Scriba, MR

    2008-01-01

    Full Text Available , laser ablation or etching, and bottom-up synthesis such as colloidal chemistry and gas phase pyrolysis. The chemical processes in the latter are generally equivalent to those in the chemical vapour deposition of compact films. In the case of silicon... the deposition unit for thin films [3], leads us to believe that thermal catalytic pyrolysis, based on established HWCVD techniques, is a viable process for Si nanoparticle (powder) synthesis. The objective of this research is to produce Si nanoparticles...

  18. Use of SWOT on SI Training

    Institute of Scientific and Technical Information of China (English)

    杨文寅

    2012-01-01

      SI, simultaneous interpretation, is always considered mysterious and machine-like. In daily practice, we are still puz⁃zled or even depressed when being told that the only path to success is the repetition of tedious practice. Definitely, practice makes perfect but enacting of scientific method enables a winged tiger. SWOT analysis, which stands for Strengths, Weaknesses, Opportunities, and Threats, provides us with an effective training theory. This article would focus on materializing SWOT into our SI practice.

  19. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1996-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  20. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.;

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  1. Development and Characterization of SiC)/ MoSi2-Si3N4(p) Hybrid Composites

    Science.gov (United States)

    Hebsur, Mohan G.

    1998-01-01

    Intermetallic compound MoSi2 has long been known as a high temperature material that has excellent oxidation resistance and electrical/thermal conductivity. Also its low cost, high melting point (2023 C), relatively low density (6.2 g/cu cm versus 9 g/cu cm for current engine materials), and ease of machining, make it an attractive structural material. However, the use of MoSi2 has been hindered due to its poor toughness at low temperatures, poor creep resistance at high temperatures, and accelerated oxidation (also known as 'pest' oxidation) at temperatures between approximately 450 and 550 C. Continuous fiber reinforcing is very effective means of improving both toughness and strength. Unfortunately, MoSi2 has a relatively high coefficient of thermal expansion (CTE) compared to potential reinforcing fibers such as SiC. The large CTE mismatch between the fiber and the matrix resulted in severe matrix cracking during thermal cycling. Addition of about 30 to 50 vol % of Si3N4 particulate to MoSi2 improved resistance to low temperature accelerated oxidation by forming a Si2ON2 protective scale and thereby eliminating catastrophic 'pest failure'. The Si3N4 addition also improved the high temperature creep strength by nearly five orders of magnitude, doubled the room temperature toughness and significantly lowered the CTE of the MoSi2 and eliminated matrix cracking in SCS-6 reinforced composites even after thermal cycling. The SCS-6 fiber reinforcement improved the room temperature fracture toughness by seven times and impact resistance by five times. The composite exhibited excellent strength and toughness improvement up to 1400 C. More recently, tape casting was adopted as the preferred processing of MoSi2-base composites for improved fiber spacing, ability to use small diameter fibers, and for lower cost. Good strength and toughness values were also obtained with fine diameter Hi-Nicalon tow fibers. This hybrid composite remains competitive with ceramic matrix

  2. Thermo-Oxidative Degradation Of SiC/Si3N4 Composites

    Science.gov (United States)

    Baaklini, George Y.; Batt, Ramakrishna T.; Rokhlin, Stanislav I.

    1995-01-01

    Experimental study conducted on thermo-oxidative degradation of composite-material specimens made of silicon carbide fibers in matrices of reaction-bonded silicon nitride. In SiC/Si3N4 composites of study, interphase is 3-micrometers-thick carbon-rich coat on surface of each SiC fiber. Thermo-oxidative degradation of these composites involves diffusion of oxygen through pores of composites to interphases damaged by oxidation. Nondestructive tests reveal critical exposure times.

  3. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2017-08-23

    As novel materials for food contact packaging, inorganic silicon oxide (SiOx) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiOx films for food packaging it is vital to study the interaction between SiOx layers and food contaminants, as well as the function of a SiOx barrier layer in antioxidant migration resistance. In this study, we deposited a SiOx layer on polylactic acid (PLA)-based films to prepare SiOx/PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiOx/PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiOx layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiOx/PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiOx/PLA coated films increase. The SiOx barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiOx/PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  4. Analiza comparativa intre sinergia in comunicarea integrata de marketing si sinergia la nivelul fuziunii si achizitiilor

    OpenAIRE

    Ana Roxana Matei

    2010-01-01

    Acest articol ilustreaza o analiza comparativa intre sinergia in comunicarea integrata de marketing (CIM) si sinergia la nivelul fuziunilor. Pana in prezent s-a discutat despre acesti termeni ca fiind diferiti dar aceasta abordare isi propune sa demonstreze ca exista o legatura si chiar o suprapunere intre acestia. Sinergia la nivelul fuziunilor si achizitiilor a fost un concept care a precedat sinergia in CIM dar nu a beneficiat de atentia acordata celei din urma. Articolul isi propune sa id...

  5. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    KAUST Repository

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

  6. X-ray scattering studies of the Si-SiO2 interface

    Science.gov (United States)

    Fuoss, P. H.; Norton, L. J.; Brennan, S.; Fischer-Colbrie, A.

    1988-02-01

    We report observation of microcrystalline interface phases at the SiO2-Si(001) interface. The crystallites have varying degrees of orientational order with respect to the substrate depending on preparation techniques. Most of the diffraction peaks from these phases can be indexed as due to the α-cristobalite structure. Data are presented for oxides prepared on Si(001) surfaces by thermal oxidation, by electron beam evaporation, and by native oxide formation.

  7. The Stellar Imager (SI) Vision Mission

    CERN Document Server

    Carpenter, K G; Karovska, M; SI Vision Mission Team; Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita; Team, SI Vision Mission

    2006-01-01

    The Stellar Imager (SI) is a UV-Optical, Space-Based Interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general and asteroseismic imaging of stellar interiors. SI is identified as a "Flagship and Landmark Discovery Mission" in the 2005 Sun Solar System Connection (SSSC) Roadmap and as a candidate for a "Pathways to Life Observatory" in the Exploration of the Universe Division (EUD) Roadmap (May, 2005). SI will revolutionize our view of many dynamic astrophysical processes: its resolution will transform point sources into extended sources, and snapshots into evolving views. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant p...

  8. Toward 17µm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays

    Science.gov (United States)

    Ericsson, Per; Fischer, Andreas C.; Forsberg, Fredrik; Roxhed, Niclas; Samel, Björn; Savage, Susan; Stemme, Göran; Wissmar, Stanley; Öberg, Olof; Niklaus, Frank

    2011-06-01

    Most of today's commercial solutions for un-cooled IR imaging sensors are based on resistive bolometers using either Vanadium oxide (VOx) or amorphous Silicon (a-Si) as the thermistor material. Despite the long history for both concepts, market penetration outside high-end applications is still limited. By allowing actors in adjacent fields, such as those from the MEMS industry, to enter the market, this situation could change. This requires, however, that technologies fitting their tools and processes are developed. Heterogeneous integration of Si/SiGe quantum well bolometers on standard CMOS read out circuits is one approach that could easily be adopted by the MEMS industry. Due to its mono crystalline nature, the Si/SiGe thermistor material has excellent noise properties that result in a state-ofthe- art signal-to-noise ratio. The material is also stable at temperatures well above 450°C which offers great flexibility for both sensor integration and novel vacuum packaging concepts. We have previously reported on heterogeneous integration of Si/SiGe quantum well bolometers with pitches of 40μm x 40μm and 25μm x 25μm. The technology scales well to smaller pixel pitches and in this paper, we will report on our work on developing heterogeneous integration for Si/SiGe QW bolometers with a pixel pitch of 17μm x 17μm.

  9. Wetting of polycrystalline SiC by molten Al and Al-Si alloys

    Science.gov (United States)

    Cong, Xiao-Shuang; Shen, Ping; Wang, Yi; Jiang, Qichuan

    2014-10-01

    The wetting of α-SiC by molten Al and Al-Si alloys was investigated using a dispensed sessile drop method in a high vacuum. In the Al-SiC system, representative wetting stages were identified. The liquid spreading was initially controlled by the deoxidation of the SiC surface and then by the formation of Al4C3 at the interface. The intrinsic contact angle for molten Al on the polycrystalline α-SiC surface was suggested to be lower than 90̊ provided that the oxide films covering the Al and SiC surfaces were removed, i.e., the system is partial wetting in nature. An increase in the Si concentration in liquid Al weakened the interfacial reaction but improved the final wettability. The role of the Si addition on the wetting was presumably attributed to its segregation at the interface and the formation of strong chemical bonds with the SiC surface.

  10. Fabrication of Si/SiO2 Superlattice Microwire Array Solar Cells Using Microsphere Lithography

    Directory of Open Access Journals (Sweden)

    Shigeru Yamada

    2016-01-01

    Full Text Available A fabrication process for silicon/silicon dioxide (Si/SiO2 superlattice microwire array solar cells was developed. The Si/SiO2 superlattice microwire array was fabricated using a microsphere lithography process with polystyrene particles. The solar cell shows a photovoltaic effect and an open-circuit voltage of 128 mV was obtained. The limiting factors of the solar cell performance were investigated from the careful observations of the solar cell structures. We also investigated the influence of the microwire array structure on light trapping in the solar cells.

  11. High thermal conductivity SiC/SiC composites for fusion applications

    Energy Technology Data Exchange (ETDEWEB)

    Withers, J.C.; Kowbel, W.; Loutfy, R.O. [MER Corp., Tucson, AZ (United States)] [and others

    1997-04-01

    SiC/SiC composites are considered for fusion applications due to their neutron irradiation stability, low activation, and good mechanical properties at high temperatures. The projected magnetic fusion power plant first wall and the divertor will operate with surface heat flux ranges of 0.5 to 1 and 4 to 6 MW/m{sup 2}, respectively. To maintain high thermal performance at operating temperatures the first wall and divertor coolant channels must have transverse thermal conductivity values of 5 to 10 and 20 to 30 W/mK, respectively. For these components exposed to a high energy neutron flux and temperatures perhaps exceeding 1000{degrees}C, SiC/SiC composites potentially can meet these demanding requirements. The lack of high-purity SiC fiber and a low through-the-thickness (transverse) thermal conductivity are two key technical problems with currently available SiC/SiC. Such composites, for example produced from Nicalon{trademark} fiber with a chemical vapor infiltrated (CVI) matrix, typically exhibit a transverse conductivity value of less than 8 W/mK (unirradiated) and less than 3 W/mK after neutron irradiation at 800{degrees}C. A new SiC/SiC composite fabrication process has been developed at MER Corp. This paper describes this process, and the thermal and mechanical properties which are observed in this new composite material.

  12. Oxidation of thin ErSi 1.7 overlayers on Si(111)

    Science.gov (United States)

    Guerfi, N.; Tan, T. A. Nguyen; Veuillen, J. Y.; Lollman, D. B.

    The oxidation of ErSi 1.7 thin films, epitaxially grown on Si(111)(7×7) surfaces by solid phase epitaxy, has been investigated by X-ray and UV photoelectron spectroscopies. Oxidation has been carried out at room temperature under low pressure (≤ 2×10 -5mbar) and 1 atm of oxygen, and at 700°C under 2 × 10 -5 mbar of oxygen. In all cases, both Si and Er react with oxygen. At room temperature the reaction depends on the pressure. Under low pressure the silicide surface is rather inert: a chemisorption phase of oxygen on Si and Er is detected only after exposures < 10 3 langmuir. High oxygen pressure produces a thin layer of mixed SiO 2, Si su☐ides and Er 2O 3. At 700°C, SiO 2 and Er 2O 3 are simultaneously formed, thus implying the decomposition of the silicide. The oxide layer has a SiO 2 termination at the surface. Only about half of the decomposed Si atoms react with oxygen. The preferential oxidation of Er is attributed to the high value of the heat of formation of Er 2O 3. An oxidation mechanism is proposed.

  13. Specimen size effect considerations for irradiation studies of SiC/SiC

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  14. Flash-lamp annealing of Si-SiO/sub 2/ transition layer defects

    Energy Technology Data Exchange (ETDEWEB)

    Lysenko, V.S.; Zimenko, V.I.; Tyagulskii, I.P.; Osiyuk, I.N.; Snitko, O.V.; Sytenko, T.N. (AN Ukrainskoj SSR, Kiev. Inst. Poluprovodnikov)

    1985-02-16

    The rearrangement of ion implanted Si-SiO/sub 2/ interface resulting from flash-lamp annealing is studied by the method of C(U) characteristics at 300 K and 1 MHz and by the method of thermostimulated charge release (TSCR) which being applied in a temperature range of 4.2 to 80 K provides information about energy spectrum and concentration of local centers in the Si-to-SiO/sub 2/ transition layer of 1 to 10 nm thickness. The analysis of TSCR current curves enabled one to determine the activation energy of shallow traps and their integrated density.

  15. Fundamental Properties and Devices Applications of Ge(x)Si(1-x)/Si Superlattices.

    Science.gov (United States)

    1987-01-01

    to loading the samples into the growth chamber, Si substrates were chemically pre-cleaned by the Shiraki method (HNO 3 ,NH4OH and HCL). Then the...SiO 2 decomposes into SiO which subsequently desorbs. (4) For T < 500 "C, no chemical reaction occurs between Si and B203 ’ A typical Auger spectrum...devices 11-131. The two-dimensional other C,) interface measurement methods. The equations derised will also serve as a basis for analitical and circuit

  16. ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dong, E-mail: dong.wang@tu-ilmenau.de; Yan, Yong; Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Sharp, Thomas [Oxford Instruments Plasma Technology Ltd., Yatton, Bristol BS49 4AP (United Kingdom); Schönherr, Sven; Ronning, Carsten [Institute for Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Ji, Ran [SUSS MicroTec Lithography GmbH, Schleissheimer Str. 90, 85748 Garching (Germany)

    2015-01-01

    Porous Si nanopillar arrays are used as templates for atomic layer deposition of ZnO and TiO{sub 2}, and thus, ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars are fabricated. The diffusion of the precursor molecules into the inside of the porous structure occurs via Knudsen diffusion and is strongly limited by the small pore size. The luminescence of the ZnO/porous-Si nanocomposite nanopillars is also investigated, and the optical emission can be changed and even quenched after a strong plasma treatment. Such nanocomposite nanopillars are interesting for photocatalysis and sensors.

  17. High-forward-bias transport mechanism in a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, T.F.; Korte, L.; Conrad, E.; Schmidt, M.; Rech, B. [Department of Silicon Photovoltaics, Helmholtz-Zentrum Berlin fuer Materialien und Energie, Kekulestrasse 5, 12489 Berlin (Germany)

    2010-03-15

    In order to elucidate the transport mechanism in a-Si:H/c-Si heterojunction solar cells under high forward bias (U > 0.5 V), we conducted temperature-dependent measurements of current-voltage (I-V) curves in the dark and under illumination. ZnO:Al/(p)a-Si:H/(n)c-Si/(n{sup +})a-Si:H cells are compared with inversely doped structures and the impact of thin undoped a-Si:H buffer layers on charge carrier transport is explored. The solar cell I-V curves are analyzed employing a generalized two-diode model which allows fitting I-V data for a broad range of samples. The fitting results are complemented with numerical simulations using AFORS-HET under consideration of microscopic a-Si:H parameters as determined by constant-final-state-yield photoelectron spectroscopy (CFSYS) to identify possible origins for a systematic increase of the high-forward-bias ideality factor along with the open-circuit voltage (V{sub oc}). It is further shown that also for a-Si:H/c-Si heterojunctions, dark I-V curve fit parameters can unequivocally be linked to V{sub oc} under illumination, which may prove helpful for device assessment. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  18. Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures

    Science.gov (United States)

    Ross, I. M.; Gass, M.; Walther, T.; Bleloch, A.; Cullis, A. G.; Lever, L.; Ikonic, Z.; Califano, M.; Kelsall, R. W.; Zhang, J.; Paul, D. J.

    In this study, we have utilised conventional and aberration corrected (scanning) transmission electron microscopy to examine the Ge concentration across a series of technologically significant SiGe/Si prototype heterostructures. Electron energy loss line profiles show that the Ge concentration within the SiGe quantum wells approaches the nominal values. However, the Ge concentration profile shows that the interfaces are not abrupt and that the narrow 0.8nm barrier layer does not reach the nominal pure Si composition. Speculation as to the presence of Ge interdiffusion, surface segregation or interface roughness is discussed.

  19. Monte Carlo simulations of hole dynamics in SiGe/Si terahertz quantum-cascade structures

    Science.gov (United States)

    Ikonić, Z.; Kelsall, R. W.; Harrison, P.

    2004-06-01

    A detailed analysis of hole transport in cascaded p - Si/SiGe quantum well structures is performed using ensemble Monte Carlo simulations. The hole subband structure is calculated using the 6×6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k -space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype terahertz Si/SiGe quantum cascade structures.

  20. Preparation of patterned SiC and SiCN microstructures

    Institute of Scientific and Technical Information of China (English)

    WANG; Hao; SUNG; In-kyung; LI; Xiaodong; KIM; Dong-pyo

    2006-01-01

    Patterned SiC and SiCN microstructures were successfully fabricated on the silicon substrates by using polydimethylsiloxane (PDMS) elastometric stamp as template, polycarbosilane (PCS) and polysilazane (PSZ) as preceramic polymers. The preparing process was followed by precursor infiltration, the curing of the precursor, demolding of the template and pyrolysis of the cured preceramic polymer pattern. It shows that the dimensions of the ceramic patterns can be tailored by using the PDMS molds with different dimensions. The produced ceramic microstructures can be potentially applied in high temperature and high pressure environments due to the advanced properties of the SiC and SiCN ceramics.

  1. Catalystlike behavior of Si adatoms in the growth of monolayer Al film on Si(111).

    Science.gov (United States)

    Teng, Jing; Zhang, Lixin; Jiang, Ying; Guo, Jiandong; Guo, Qinlin; Wang, Enge; Ebert, Philipp; Sakurai, T; Wu, Kehui

    2010-07-07

    The formation mechanism of monolayer Al(111)1x1 film on the Si(111) radical3x radical3-Al substrate was studied by scanning tunneling microscopy and first-principles calculations. We found that the Si adatoms on the radical3x radical3-Al substrate play important roles in the growth process. The growth of Al-1x1 islands is mediated by the formation and decomposition of SiAl(2) clusters. Based on experiments and theoretical simulations we propose a model where free Si atoms exhibit a catalystlike behavior by capturing and releasing Al atoms during the Al film growth.

  2. Microstructure and properties of Si-TaSi2 eutectic in situ composite for field emission

    Institute of Scientific and Technical Information of China (English)

    CUI ChunJuan; ZHANG Jun; HAN Min; CHEN Jun; XU NingSheng; LIU Lin; FU HengZhi

    2007-01-01

    The Si-TaSi2 eutectic in situ composite for field emission is prepared by electron beam floating zone melting (EBFZM) technique on the basis of Czochralski (CZ) crystal growth technique. The directional solidification microstructure and the field emission properties of the Si-TaSi2 eutectic in situ composite prepared by two kinds of crystal growth techniques have been systematically tested and compared.Researches demonstrated that the solidification microstructure of EBFZM can be fined obviously because of the relatively high solidification rate and very high temperature gradient, i.e. both the diameter and inter-rod spacing of the TaSi2 fibers prepared by EBFZM technique were decreased, and the density and the volume fraction of the TaSi2 fibers prepared by EBFZM technique were increased in comparison with that of the TaSi2 fibers prepared by CZ method. Therefore the field emission property of the Si-TaSi2 eutectic in situ composite prepared by EBFZM can be improved greatly, which exhibits better field emission uniformity and straighter F-N curve.

  3. 26Si excited states via one-neutron removal from a 27Si radioactive ion beam

    Science.gov (United States)

    Chen, J.; Chen, A. A.; Amthor, A. M.; Bazin, D.; Becerril, A. D.; Gade, A.; Galaviz, D.; Glasmacher, T.; Kahl, D.; Lorusso, G.; Matos, M.; Ouellet, C. V.; Pereira, J.; Schatz, H.; Smith, K.; Wales, B.; Weisshaar, D.; Zegers, R. G. T.

    2012-04-01

    A study of 26Si states by neutron removal from a fast radioactive beam of 27Si has been performed. A beam of 27Si of energy 84.3 MeV/nucleon impinged on a polypropylene foil (C3H6) of 180 mg/cm2 thickness. Deexcitation γ rays were detected with a highly segmented germanium detector array, in coincidence with the 26Si recoils, and the corresponding 26Si level energies were determined. In comparing our results to two previous γ-ray spectroscopic studies of 26Si level structures, we find good agreement with a recent measurement of the 12C(16O,2nγ)26Si reaction. Our results support the use of excitation energies from that study in helping determine the important resonance energies for the thermonuclear 25Al(p,γ)26Si reaction rate. We do not observe a bound state at 4093 keV reported in an earlier study of the 24Mg(3He,nγ)26Si reaction.

  4. One-dimensional Si-in-Si(001) template for single-atom wire growth

    Science.gov (United States)

    Owen, J. H. G.; Bianco, F.; Köster, S. A.; Mazur, D.; Bowler, D. R.; Renner, Ch.

    2010-08-01

    Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We present atomic-resolution scanning tunneling microscope data of a silicon-only template, which modeling predicts to enable the self-organized growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one-dimensional, defect-free Si reconstruction four dimers wide—the Haiku core—formed by hydrogenation of self-assembled Bi-nanolines on Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to vicinal surfaces for nanoscale patterning.

  5. Effect of Adventitious Carbon on the Environmental Degradation of SiC/BN/SiC Composites

    Science.gov (United States)

    Ogbuji, L. U. J. T.; Yun, H. M.; DiCarlo, J.

    2002-01-01

    Pesting remains a major obstacle to the application of SiC/SiC composites in engine service and selective degradation of the boron nitride interphase at intermediate temperatures is of primary concern. However, significant progress has been made on interphase improvement recently and we now know more about the phenomenon and ways to suppress it. By screening SiC/BN/SiC materials through characterization of strength and microstructures after exposure in a burner rig, some factors that control pesting in these composites have been determined. A key precaution is careful control of elemental carbon presence in the interphase region.

  6. Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    According to Maxwell's theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.

  7. Thermodynamic Assessments of the Fe-Si-Cr and Fe-Si-Mg Systems

    Science.gov (United States)

    Cui, Senlin; Jung, In-Ho

    2017-09-01

    Thermodynamic assessments for the Fe-Si-Cr and Fe-Si-Mg ternary systems were conducted based on the critically evaluated and optimized thermodynamic and phase diagram data in the literature. The Gibbs energy of the liquid phase was described using the modified quasi-chemical model in pair approximation. The obtained thermodynamic descriptions of the Fe-Si-Cr and Fe-Si-Mg systems can be used to calculate any sections of the phase diagrams and thermodynamic properties of these two systems with high accuracy from room temperature to above the melting temperature.

  8. Microstructure of reactive sintered Al bonded Si3N4-SiC ceramics

    Institute of Scientific and Technical Information of China (English)

    CUI Chong; WANG Yuan-ting; JIANG Jin-guo; CHEN Guang; SUN Qiang-jin

    2006-01-01

    Aluminium nitride-silicon nitride-silicon carbide (AlN-Si3N4-SiC) composite ceramics were prepared to increase the bending strength and improve the phase structure of Si3N4-based ceramics. The ceramics were made by reactive sintering in N2 atmosphere at 1 360 ℃, using Al as sintering additive. The phase composing of ceramics was identified with an X-ray diffractometer and the microstructure of the materials was studied by scanning electron microscopy. The results indicate that the phase structure is affected remarkably and the interface modality is changed. The interface between Si3N4 and SiC becomes blurry and that between SiC and AlN matches more better at the same time. But the liquid-phase appears during the reactive sintering along with the addition of Al by which the melting point of Si is decreased. The appearance of liquid Si decreases the bending strength of the ceramics. Lower temperature nitrification technic was introduced to avoid the appearance of liquid-phase Si. The optimum addition of Al was investigated by XRD and SEM analysis in order to obtain the maximal bending strength of materials.

  9. Stability of Ta-encapsulating Si clusters on Si(111)-(7x7) surfaces

    CERN Document Server

    Uchida, N; Miyazaki, T; Kanayama, T

    2003-01-01

    Tantalum containing Si cluster ions TaSi sub 1 sub 0 sub - sub 1 sub 3 H sub x sup + were synthesized in an ion trap and deposited onto Si(111)-(7x7) surfaces with a kinetic energy of 18 eV. Scanning tunnelling microscope observations revealed that the clusters adsorbed on the surface without decomposition, consistent with ab initio calculation results, that predicted the clusters would have stable Si-cage structures with a Ta atom at the centre. (rapid communication)

  10. Electronic structure and charge transfer in α- and β-Si3N4 and at the Si(111)/Si3N4(001) interface

    Science.gov (United States)

    Zhao, G. L.; Bachlechner, M. E.

    1998-07-01

    Using a self-consistent linear combination of atomic orbitals method based on density-functional theory in a local-density approximation, the electronic structure in the high-temperature ceramics α-Si3N4 and β-Si3N4 and at the Si(111)/Si3N4(001) interface have been calculated. The resulting charge transfer suggests that the ionic formula can be written as Si+1.243N-0.934. For the Si(111)/Si3N4(001) interface, the silicon atoms from the silicon side lose some electrons to the nitrogen atoms of the silicon nitride side forming Si-N bonds at the interface. The calculated electronic density of states spectrum of Si 2p core levels for this interface is in good agreement with x-ray photoemission spectroscopy experiments.

  11. High temperature creep behavior of in-situ synthesized MoSi2-30%SiC composite

    Institute of Scientific and Technical Information of China (English)

    傅晓伟; 杨王玥; 孙祖庆; 张来启; 朱静

    2002-01-01

    The compressive creep behavior at 1200~1400℃ of an in-situ synt hesized MoSi2-30%SiC (volume fraction) composite and a traditional PM MoSi2 -30%SiC (volume fraction) composite is investigated. The creep rate of the in -situ synthesized MoSi2-30%SiC (volume fraction) composite is about 10- 7s-1 under stress of 60~120MPa, and significantly lower than that made by PM method above 1300℃. The reason is that the interface be tween SiC particle and MoSi2 matrix in in-situ synthesized SiCp/MoSi2 is of direct atomic bonding without any amorphous glassy phase, such as SiO2 stru cture. Creep deformation occurs primarily by dislocation motion and the dislocat ions have Burgers vectors of the ty pe of 〈110〉 and 〈100〉.

  12. Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

    Directory of Open Access Journals (Sweden)

    Zhuk Sergey I.

    2017-01-01

    Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

  13. Theory of Si and C Pb Centers on the (111) Interfaces of the β-SiC-SiO2 System.

    Science.gov (United States)

    Fowler, W. Beall; Edwards, Arthur H.

    1997-03-01

    We report theoretical calculations on the Si and C Pb centers on the (111) interfaces of the β-SiC-SiO2 system. Our atomic cluster sizes are such that our results apply equally to (0001) 6H and 4H SiC-SiO2 interfaces. Using semiempirical quantum mechanical (MOPAC 6.0)(J. J. P. Stewart, MOPAC 6.0, QCPE 455) (1990). and ab-initio (GAMESS)(M. W. Schmidt et) al., J. Comput. C hem. 14, 1347 (1993). codes, we have calculated equilibrium geometries and have predicted ^29Si and ^14C hyperfine parameters and electrical level positions. We have also used a modified(W. B. Fowler and R. J. El liott, Phys. Rev. B34), 5525 (1986). Haldane-Anderson approach to estimate level positions and defect charge s. Compared with the Pb center on the (111) Si-SiO2 interface, we predict greater atomic relaxations for the Si Pb and smaller atomic relaxations for the C P_b. Furthermore, we predict a large increase in hyperfine constants for the Si Pb as compared with that on the Si-SiO2 interface. For the Si P_b, both -/0 and 0/+ levels are predicted to lie in the upper half of the SiC gap; for the C Pb the -/0 level is predicted to lie in the upper half and the 0/+ level in the lower half of the gap.

  14. Deep ultraviolet photodetectors based on p-Si/ i-SiC/ n-Ga2O3 heterojunction by inserting thin SiC barrier layer

    Science.gov (United States)

    An, Yuehua; Zhi, Yusong; Wu, Zhenping; Cui, Wei; Zhao, Xiaolong; Guo, Daoyou; Li, Peigang; Tang, Weihua

    2016-12-01

    Deep ultraviolet photodetectors based on p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterojunctions were fabricated by laser molecular beam epitaxial (L-MBE), respectively. In compare with p-Si/ n-Ga2O3 heterostructure-based photodetector, the dark current of p-Si/ i-SiC/ n-Ga2O3-based photodetector decreased by three orders of magnitude, and the rectifying behavior was tuned from reverse to forward. In order to improve the quality of the photodetector, we reduced the oxygen vacancies of p-Si/ i-SiC/ n-Ga2O3 heterostructures by changing the oxygen pressure during annealing. As a result, the rectification ratio ( I F/ I R) of the fabricated photodetectors was 36 at 4.5 V and the photosensitivity was 5.4 × 105% under the 254 nm light illumination at -4.5 V. The energy band structure of p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterostructures was schematic drawn to explain the physic mechanism of enhancement of the performance of p-Si/ i-SiC/ n-Ga2O3 heterostructure-based deep UV photodetector by introduction of SiC layer.

  15. Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

    Science.gov (United States)

    Yao, Guisheng; Li, Yong; Jiang, Peng; Jin, Xiuming; Long, Menglong; Qin, Haixia; Kumar, R. Vasant

    2017-04-01

    Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si3N4 and Si2N2O are formed as the nitridation products in the samples. Fibroid and short columnar Si3N4 are detected in the samples. The formation mechanisms of Si3N4 and Si2N2O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O2 in N2 atmosphere, forming a thin film of SiO2 on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO2 film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO2 film will crack, and N2 is infiltrated into the central section of the sample through cracks, generating Si2N2O and short columnar Si3N4 in situ. At the same time, metastable SiO(g) reacts with N2 and form fibroid Si3N4. In the regions where the oxygen partial pressure is high, Si3N4 is oxidized into Si2N2O.

  16. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

    Science.gov (United States)

    Khazaka, Rami; Michaud, Jean-François; Vennéguès, Philippe; Nguyen, Luan; Alquier, Daniel; Portail, Marc

    2016-11-01

    In this contribution, we performed the growth of a 3C-SiC/Si/3C-SiC layer stack on a Si(001) substrate by means of chemical vapor deposition. We show that, by tuning the growth conditions, the 3C-SiC epilayer can be grown along either the [111] direction or the [110] direction. The key parameter for the growth of the desired 3C-SiC orientation on the Si(110)/3C-SiC(001)/Si(001) heterostructure is highlighted and is linked to the Si epilayer surface morphology. The epitaxial relation between the layers has been identified using X-ray diffraction and transmission electron microscopy (TEM). We showed that, regardless of the top 3C-SiC epilayer orientation, domains rotated by 90° around the growth direction are present in the epilayer. Furthermore, the difference between the two 3C-SiC orientations was investigated by means of high magnification TEM. The results indicate that the faceted Si(110) epilayer surface morphology results in a (110)-oriented 3C-SiC epilayer, whereas a flat hetero-interface has been observed between 3C-SiC(111) and Si(110). The control of the top 3C-SiC growth direction can be advantageous for the development of new micro-electro-mechanical systems.

  17. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    Science.gov (United States)

    Pramann, Axel; Rienitz, Olaf

    2016-06-01

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

  18. Ultraviolet responses of a heterojunction Si quantum dot solar cell.

    Science.gov (United States)

    Lee, Seong Hyun; Kwak, Gyea Young; Hong, Songwoung; Kim, Chanhong; Kim, Sung; Kim, Ansoon; Kim, Kyung Joong

    2017-01-20

    We investigated the ultraviolet (UV) responses of a heterojunction Si quantum dot (QD) solar cell consisting of p-type Si-QDs fabricated on a n-type crystalline Si (p-Si-QD/n-c-Si HJSC). The UV responses were compared with a conventional n-type crystalline Si solar cell (n-c-Si SC). The external and internal quantum efficiency results of the p-Si-QD/n-c-Si HJSC exhibited a clear enhancement in the UV responses (300-400 nm), which was not observed in the n-c-Si SC. Based on the results of the cell reflectance and bias-dependent responses, we expect that almost all UV responses occur in the p-Si-QD layer, and the generated carriers can be transported via the Si-QD layer due to the formation of a sufficient electric filed. As a result, a high power conversion efficiency of 14.5% was achieved from the p-Si-QD/n-c-Si HJSC. By reducing the thickness of the n-Si substrate from 650 μm to 300 μm, more enhanced power conversion efficiency of 14.8% was obtained which is the highest value among the reported Si-QD based solar cells to date.

  19. Ultraviolet responses of a heterojunction Si quantum dot solar cell

    Science.gov (United States)

    Lee, Seong Hyun; Kwak, Gyea Young; Hong, Songwoung; Kim, Chanhong; Kim, Sung; Kim, Ansoon; Kim, Kyung Joong

    2017-01-01

    We investigated the ultraviolet (UV) responses of a heterojunction Si quantum dot (QD) solar cell consisting of p-type Si-QDs fabricated on a n-type crystalline Si (p-Si-QD/n-c-Si HJSC). The UV responses were compared with a conventional n-type crystalline Si solar cell (n-c-Si SC). The external and internal quantum efficiency results of the p-Si-QD/n-c-Si HJSC exhibited a clear enhancement in the UV responses (300–400 nm), which was not observed in the n-c-Si SC. Based on the results of the cell reflectance and bias-dependent responses, we expect that almost all UV responses occur in the p-Si-QD layer, and the generated carriers can be transported via the Si-QD layer due to the formation of a sufficient electric filed. As a result, a high power conversion efficiency of 14.5% was achieved from the p-Si-QD/n-c-Si HJSC. By reducing the thickness of the n-Si substrate from 650 μm to 300 μm, more enhanced power conversion efficiency of 14.8% was obtained which is the highest value among the reported Si-QD based solar cells to date.

  20. Electrospun a-Si using Liquid Silane/Polymer Inks

    Energy Technology Data Exchange (ETDEWEB)

    Doug Schulz

    2010-12-09

    Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

  1. Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

    Science.gov (United States)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1989-01-01

    The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by an Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.

  2. J(Si,H) Coupling Constants of Activated Si-H Bonds.

    Science.gov (United States)

    Meixner, Petra; Batke, Kilian; Fischer, Andreas; Schmitz, Dominik; Eickerling, Georg; Kalter, Marcel; Ruhland, Klaus; Eichele, Klaus; Barquera-Lozada, José E; Casati, Nicola P M; Montisci, Fabio; Macchi, Piero; Scherer, Wolfgang

    2017-09-18

    We outline in this combined experimental and theoretical NMR study that sign and magnitude of J(Si,H) coupling constants provide reliable indicators to evaluate the extent of the oxidative addition of Si-H bonds in hydrosilane complexes. In combination with experimental electron density studies and MO analyses a simple structure-property relationship emerges: positive J(Si,H) coupling constants are observed in cases where M → L π-back-donation (M = transition metal; L = hydrosilane ligand) dominates. The corresponding complexes are located close to the terminus of the respective oxidative addition trajectory. In contrast negative J(Si,H) values signal the predominance of significant covalent Si-H interactions and the according complexes reside at an earlier stage of the oxidative addition reaction pathway. Hence, in nonclassical hydrosilane complexes such as Cp2Ti(PMe3)(HSiMe3-nCln) (with n = 1-3) the sign of J(Si,H) changes from minus to plus with increasing number of chloro substituents n and maps the rising degree of oxidative addition. Accordingly, the sign and magnitude of J(Si,H) coupling constants can be employed to identify and characterize nonclassical hydrosilane species also in solution. These NMR studies might therefore help to reveal the salient control parameters of the Si-H bond activation process in transition-metal hydrosilane complexes which represent key intermediates for numerous metal-catalyzed Si-H bond activation processes. Furthermore, experimental high-resolution and high-pressure X-ray diffraction studies were undertaken to explore the close relationship between the topology of the electron density displayed by the η(2)(Si-H)M units and their respective J(Si,H) couplings.

  3. Hydrogen related phenomena at the ITO/a-Si:H/Si heterojunction solar cell interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ulyashin, Alexander [SINTEF Materials and Chemistry, Forskningsveien 1, P.O. Box 124, 0314 Oslo (Norway); Sytchkova, Anna [Optical Coatings Laboratory, ENEA Casaccia C.R.E., via Anguillarese 301, 00123 Rome (Italy)

    2013-04-15

    Properties of thin a-Si:H and indium-tin oxide (ITO) layers as well as properties of interfaces of Si based heterojunction (HJ) ITO/(p)a-Si:H/n-Si structures were analyzed by means of atomic force microscopy (AFM) and scanning spreading resistance microscopy. It is shown that the morphology of thin ITO layers grown on n-type polished crystalline Si or on (p)a-Si:H/n-Si substrates depends on the deposition temperature and has peculiarities on nano-scale. Formation of highly conductive nano-dots on the surface and in the bulk of ITO layers is found. The observed nano-spots and nano-dots are attributed to the influence of hydrogen initiated reduction process, which occurs upon deposition of ITO films on an a-Si:H layer during the fabrication process of a HJ solar cell. This fact is confirmed by investigation of morphological properties of ITO surfaces after treatment by hydrogen plasma. It is shown that formation of conductive nano-particles on the ITO surface initiated by hydrogen does not change essentially transparency of an ITO layer. It is concluded that conductive nano-dots at the ITO/a-Si:H interface can be considered as local conductive channels, which provide a current flow through the ITO/(p)a-Si:H interface without essential shadowing of the solar cell structure. This finding opens an interesting way for the optimization of properties of the ITO/Si-based HJ solar cells. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Adsorption of Si on Gu(100) and (111) Surfaces

    Institute of Scientific and Technical Information of China (English)

    HE Guo-Min

    2004-01-01

    @@ Employing the density-functional theory within the generalized gradient approximation, we investigate the interaction between atomic Si and the Cu(100) and (111) surfaces. Various structures of on-surface adsorption as well as surface-substitutional adsorption for a wide range of Si coverage are considered. Our results show that both Cu(100) and (111) surfaces are active for adsorption of Si. The c(2 × 2)-Si/Cu(100) surface alloy is energetically favourable for a large range of Si chemical potential while c(2 × 2)-Si/Cu(111) is energetically favourable only under Si rich conditions.

  5. Wetting behavior of Al Si Mg alloys on Si3N4/Si substrates: optimization of processing parameters

    Science.gov (United States)

    de La Peña, J. L.; Pech-Canul, M. I.

    2008-06-01

    The wetting behavior of Al Si Mg alloys on Si3N4/Si substrates has been investigated using the sessile drop technique. Based on a Taguchi experiment design, the effect of the following processing parameters on the contact angle (θ) and surface tension (σLV) was studied: processing time and temperature, atmosphere (Ar and N2), substrate surface condition (with and without a silicon wafer), as well as the Mg and Si contents in the aluminium alloy. In nitrogen, non-wetting conditions prevail during the isothermal events while in argon a remarkable non-wetting to wetting transition leads to contact angles θ as low as 11±3° and a liquid surface tension σLV of 33± 10×10-5 kJ/m2. According to the multiple analysis of variance (Manova), the optimum conditions for minimizing the values of θ and σLV are as follows: temperature of 1100 °C, processing time of 90 min, argon atmosphere, no use of a silicon wafer, and the use of the Al-18% Mg-1% Si alloy. A verification test conducted under the optimized conditions resulted in a contact angle of θ=9±3° and a surface tension of σLV=29± 9×10-5 kJ/m2, both indicative of excellent wetting.

  6. Influence of absorber doping in a-SiC:H/a-Si:H/a-SiGe:H solar cells

    Science.gov (United States)

    Nawaz, Muhammad; Ahmad, Ashfaq

    2012-04-01

    This work deals with the design evaluation and influence of absorber doping for a-Si:H/a-SiC:H/a-SiGe:H based thin-film solar cells using a two-dimensional computer aided design (TCAD) tool. Various physical parameters of the layered structure, such as doping and thickness of the absorber layer, have been studied. For reliable device simulation with realistic predictability, the device performance is evaluated by implementing necessary models (e.g., surface recombinations, thermionic field emission tunneling model for carrier transport at the heterojunction, Schokley—Read Hall recombination model, Auger recombination model, bandgap narrowing effects, doping and temperature dependent mobility model and using Fermi—Dirac statistics). A single absorber with a graded design gives an efficiency of 10.1% for 800 nm thick multiband absorption. Similarly, a tandem design shows an efficiency of 10.4% with a total absorber of thickness of 800 nm at a bandgap of 1.75 eV and 1.0 eV for the top a-Si and bottom a-SiGe component cells. A moderate n-doping in the absorber helps to improve the efficiency while p doping in the absorber degrades efficiency due to a decrease in the VOC (and fill factor) of the device.

  7. Eu-doped Si-SiO2 core-shell nanowires for Si-compatible red emission

    Science.gov (United States)

    Xu, Jinyou; Guo, Pengfei; Zou, Zhijun; Lu, Yang; Yan, Hailong; Luo, Yongsong

    2016-09-01

    The indirect bandgap of single-crystalline silicon has so far precluded the full integration of silicon microelectronics with photonics—which is expected to allow the realization of low-cost, high-speed optical information processing and communication in the future. Here we report the growth of europium (Eu)-doped Si-SiO2 core-shell nanowires by an oxide-assisted chemical vapor deposition method. The Eu concentration in these nanowires is effectively improved by intentionally increasing the thickness of SiO2 shells. As a result, a strong Si-compatible red emission from Eu3+ ions was observed under laser illumination. The effect of Eu3+ concentration on the emission efficiency was comprehensively studied, with the highest efficiency at Eu content about 0.8 at%. The relaxation mechanism of this concentration dependent luminescence was further explored through lifetime measurements. In light of the strong characteristic red emission and nanoscale footprint, these nanowires are promising Si-compatible light emission materials for future integrated nanophotonics.

  8. Influence of absorber doping in a-SiC:H/a-Si:H/a-SiGe:H solar cells

    Institute of Scientific and Technical Information of China (English)

    Muhammad Nawaz; Ashfaq Ahmad

    2012-01-01

    This work deals with the design evaluation and influence of absorber doping for a-Si:H/a-SiC:H/a-SiGe:H based thin-film solar cells using a two-dimensional computer aided design (TCAD) tool.Various physical parameters of the layered structure,such as doping and thickness of the absorber layer,have been studied.For reliable device simulation with realistic predictability,the device performance is evaluated by implementing necessary models (e.g.,surface recombinations,thermionic field emission tunneling model for carrier transport at the heterojunction,Schokley-Read Hall recombination model,Auger recombination model,bandgap narrowing effects,doping and temperature dependent mobility model and using Fermi-Dirac statistics).A single absorber with a graded design gives an efficiency of 10.1% for 800 nm thick multiband absorption.Similarly,a tandem design shows an efficiency of 10.4% with a total absorber of thickness of 800 nm at a bandgap of 1.75 eV and 1.0 eV for the top a-Si and bottom a-SiGe component cells.A moderate n-doping in the absorber helps to improve the efficiency while p doping in the absorber degrades efficiency due to a decrease in the Voc (and fill factor) of the device.

  9. Microstructural evolution of SiC/Cu-Si composites obtained through reactive infiltration; Evolucion microestructural de composites SiC/aleaciones CuSi obtenidos a traves de infiltracion ractiva

    Energy Technology Data Exchange (ETDEWEB)

    Cornejo, J.; Ordonez, S.; Iturriza, I.

    2010-07-01

    The microstructural evolution of composites of SiC/Cu-Si alloys obtained through process of reactive infiltration to 1400 degree centigrade was studied. Three zones were detected in the obtained composites: the reaction zone, the transition zone and the infiltrated zone. In the reaction zone and transition zone the resulting microstructure was composed of a metallic phase, graphite laminae and SiC particles. It was found that SiC decomposes into these areas because of the alloy Cu-Si, so the available Si forms a liquid solution that a room temperature consisted of a a solid solution and a {gamma} phase (Cu{sub 5}Si). The carbon resulting from the decomposition of SiC precipitated as graphite laminae. In addition, the SiC decomposition was decreasing as the initial amount of Si in the alloy increased. (Author) 37 refs.

  10. Evidences of the existence of SiTe2 crystalline phase and a proposed new Si-Te phase diagram

    Science.gov (United States)

    Mishra, R.; Mishra, P. K.; Phapale, S.; Babu, P. D.; Sastry, P. U.; Ravikumar, G.; Yadav, A. K.

    2016-05-01

    The existence of two distinct crystalline phases viz., Si2Te3 and SiTe2, in the Si-Te system is established from differential thermal analysis (DTA) studies. Thermo-gravimetric (TG) data on SiTe2 indicate that the compound decomposes to Si in multiple steps via intermediate Si2Te3 phase. X-ray diffraction (XRD) reveals that SiTe2 crystallizes in P 3 ̅m1 space group with CdI2 trigonal structure, whereas Si2Te3 crystallizes in trigonal structure with space group P 3 ̅1c with varying occupation of octahedral voids. Single Si atoms fill only 1/2 of the octahedral voids in SiTe2 structure whereas in Si2Te3, Si atoms are arranged in pairs occupying 2/3 of the octahedral voids in alternating planes along c-axis. Further, X-ray absorption near edge structure (XANES) and X-ray photoelectron spectroscopy (XPS) confirm the distinctness of the chemical environment in the two crystalline structures confirming the uniqueness of both the phases. DTA results on the two compounds indicate the presence of one crystallographic phase-transition in each of the compound with transition temperatures at 441 °C for Si2Te3 and 392 °C for SiTe2. At the same time both Si2Te3 and SiTe2 undergo peritectic decomposition at 683 °C and 432 °C forming [Si(s)+Te(liq)] and [α-Si2Te3(s)+Te(liq)], respectively. The system revealed eutectic reaction between β-SiTe2 and Te at 398 °C [L=Te+SiTe2]. Consequently, the phase diagram in the Si-Te system has been delineated.

  11. How to make the ionic Si-O bond more covalent and the Si-O-Si linkage a better acceptor for hydrogen bonding.

    Science.gov (United States)

    Grabowsky, Simon; Hesse, Maxie F; Paulmann, Carsten; Luger, Peter; Beckmann, Jens

    2009-05-18

    Variation of a bond angle can tune the reactivity of a chemical compound. To exemplify this concept, the nature of the siloxane linkage (Si-O-Si), the most abundant chemical bond in the earth's crust, was examined using theoretical calculations on the molecular model compounds H(3)SiOSiH(3), (H(3)Si)(2)OHOH, and (H(3)Si)(2)OHOSiH(3) and high-resolution synchrotron X-ray diffraction experiments on 5-dimethylhydroxysilyl-1,3-dihydro-1,1,3,3-tetramethyl-2,1,3-benzoxadisilole (1), a molecular compound that gives rise to the formation of very rare intermolecular hydrogen bonds between the silanol groups and the siloxane linkages. For theoretical calculations and experiment, electronic descriptors were derived from a topological analysis of the electron density (ED) distribution and the electron localization function (ELF). The topological analysis of an experimentally obtained ELF is a newly developed methodology. These descriptors reveal that the Si-O bond character and the basicity of the siloxane linkage strongly depend on the Si-O-Si angle. While the ionic bond character is dominant for Si-O bonds, covalent bond contributions become more significant and the basicity increases when the Si-O-Si angle is reduced from linearity to values near the tetrahedral angle. Thus, the existence of the exceptional intermolecular hydrogen bond observed for 1 can be explained by its very small strained Si-O-Si angle that adopts nearly a tetrahedral angle.

  12. Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2013-01-01

    Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

  13. Efficiency and Cost Comparison of Si IGBT and SiC JFET Isolated DC/DC Converters

    DEFF Research Database (Denmark)

    Nielsen, Rasmus Ørndrup; Török, Lajos; Munk-Nielsen, Stig

    2013-01-01

    . An efficiency of above 97 % for the SiC JFET and over 90 % for the SI IGBT converter was measured. Cost differences between the two converters have been analyzed, showing that 772 days of operation are needed for the SiC converter costs to break even with the Si IGBT converter costs....

  14. Nanoscale hot electron transport across Cu/n-Si(100) and Cu/n-Si(111) interfaces

    NARCIS (Netherlands)

    Parui, S.; Ploeg, J.R.R. van der; Rana, K.G.; Banerjee, T.

    2011-01-01

    Ballistic electron emission microscopy (BEEM) has been used to investigate hot electron transmission, at the nanoscale, in thin films of Cu on Si(100) and Si(111). For all Cu thicknesses studied here, the BEEM transmission is observed to be twice larger for Si(111) than for Si(100). Further, the att

  15. Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser

    NARCIS (Netherlands)

    Ishihara, R.; Zhang, J.; Trifunovic, M.; Van der Zwan, M.; Takagishi, H.; Kawajiri, R.; Shimoda, T.; Beenakker, C.I.M.

    2012-01-01

    Solution process of silicon using liquid-Si is attractive for fabrication of high-speed flexible electronics. We have fabricated single-grain Si TFTs on location-controlled Si grains with longpulse excimer laser crystallization of spin-coated liquid Si film. The maximum grain diameter is 3.5μm, and

  16. Morphology ofα-Si3N4 in Fe-Si3N4 prepared via flash combustion

    Institute of Scientific and Technical Information of China (English)

    Bin Li; Jun-hong Chen; Jin-dong Su; Ming-wei Yan; Jia-lin Sun; Yong Li

    2015-01-01

    The state and formation mechanism ofα-Si3N4 in Fe–Si3N4 prepared by flash combustion were investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results indicate thatα-Si3N4 crystals exist only in the Fe–Si3N4 dense areas. When FeSi75 particles react with N2, which generates substantial heat, a large number of Si solid particles evaporate. The prod-uct between Si gas and N2 is a mixture ofα-Si3N4 andβ-Si3N4. At the later stage of the flash combustion process,α-Si3N4 crystals dissolve and reprecipitate asβ-Si3N4 and theβ-Si3N4 crystals grow outward from the dense areas in the product pool. As the temperature decreases, the α-Si3N4 crystals cool before transforming into β-Si3N4 crystals in the dense areas of Fe–Si3N4. The phase composition of flash-combustion-synthesized Fe–Si3N4 is controllable through manipulation of the gas-phase reaction in the early stage and theα→βtrans-formation in the later stage.

  17. Morphology of α-Si3N4 in Fe-Si3N4 prepared via flash combustion

    Science.gov (United States)

    Li, Bin; Chen, Jun-hong; Su, Jin-dong; Yan, Ming-wei; Sun, Jia-lin; Li, Yong

    2015-12-01

    The state and formation mechanism of α-Si3N4 in Fe-Si3N4 prepared by flash combustion were investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results indicate that α-Si3N4 crystals exist only in the Fe-Si3N4 dense areas. When FeSi75 particles react with N2, which generates substantial heat, a large number of Si solid particles evaporate. The product between Si gas and N2 is a mixture of α-Si3N4 and β-Si3N4. At the later stage of the flash combustion process, α-Si3N4 crystals dissolve and reprecipitate as β-Si3N4 and the β-Si3N4 crystals grow outward from the dense areas in the product pool. As the temperature decreases, the α-Si3N4 crystals cool before transforming into β-Si3N4 crystals in the dense areas of Fe-Si3N4. The phase composition of flash-combustion-synthesized Fe-Si3N4 is controllable through manipulation of the gas-phase reaction in the early stage and the α→β transformation in the later stage.

  18. Microstructure and Hot Oxidation Resistance of SiMo Ductile Cast Irons Containing Si-Mo-Al

    Science.gov (United States)

    Ibrahim, Mervat M.; Nofal, Adel; Mourad, M. M.

    2016-12-01

    SiMo ductile cast irons are used as high-temperature materials in automotive components, because they are microstructurally stable at high operating temperatures. The effect of different amounts of Si and Mo as well as the addition of 3 wt pct Al on the microstructure, high-temperature oxidation, and mechanical properties of SiMo ductile cast iron was studied. Dilatometric measurements of SiMo ductile iron exhibited obvious differences in the transformation temperature A 1 due to presence of Al and the increase of Si. The microstructure of the SiMo alloys without Al addition showed outstanding nodularity and uniform nodule distribution. However, by adding 3 wt pct Al to low Si-SiMo ductile iron, some compacted graphite was observed. The results of oxidation experiments indicated that high Si-SiMo ductile iron containing 4 and 4.9 wt pct Si had superior resistance to lower Si-SiMo and SiMo ductile iron containing 3 wt pct Al. The results showed also that with increasing Si up to 4.9 wt pct or by replacing a part of Si with 3 wt pct Al, tensile strength increased while elongation and impact toughness decreased.

  19. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  20. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Directory of Open Access Journals (Sweden)

    David J. Lockwood

    2016-03-01

    Full Text Available Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 – 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots, two dimensions (corresponding to quantum wires, and one dimension (corresponding to quantum wells. The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW heterojunctions (HJs with a Si/Ge NW diameter in the range 50 – 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si

  1. Three Crystalline Polymorphs of KFeSi04, Potassium Ferrisilicate

    DEFF Research Database (Denmark)

    Bentzen, Janet Jonna

    1983-01-01

    Orthorhombic α-KFeSi04 ( a =0.5478, b =0.9192, c =0.8580 nm), hexagonal β-KFeSiO4 (a =0.5309, c =0.8873 nm), and hexagonal γ-KFeSi04 (a =0.5319, c =0.8815 nm) were synthesized by devitrification of KFeSiO4 glass. Powder X-ray diffraction data are given for all three polymorphs. Alpha KFeSiO4, the...

  2. Suppression of diabetic retinopathy with GLUT1 siRNA.

    Science.gov (United States)

    You, Zhi-Peng; Zhang, Yu-Lan; Shi, Ke; Shi, Lu; Zhang, Yue-Zhi; Zhou, Yue; Wang, Chang-Yun

    2017-08-07

    To investigate the effect of glucose transporter-1 (GLUT1) inhibition on diabetic retinopathy, we divided forty-eight mice into scrambled siRNA, diabetic scrambled siRNA, and GLUT1 siRNA (intravitreally injected) groups. Twenty-one weeks after diabetes induction, we calculated retinal glucose concentrations, used electroretinography (ERG) and histochemical methods to assess photoreceptor degeneration, and conducted immunoblotting, leukostasis and vascular leakage assays to estimate microangiopathy. The diabetic scrambled siRNA and GLUT1 siRNA exhibited higher glucose concentrations than scrambled siRNA, but GLUT1 siRNA group concentrations were only 50.05% of diabetic scrambled siRNA due to downregulated GLUT1 expression. The diabetic scrambled siRNA and GLUT1 siRNA had lower ERG amplitudes and ONL thicknesses than scrambled siRNA. However, compared with diabetic scrambled siRNA, GLUT1 siRNA group amplitudes and thicknesses were higher. Diabetic scrambled siRNA cones were more loosely arranged and had shorter outer segments than GLUT1 siRNA cones. ICAM-1 and TNF-α expression levels, adherent leukocyte numbers, fluorescence leakage areas and extravasated Evans blue in diabetic scrambled siRNA were higher than those in scrambled siRNA. However, these parameters in the GLUT1 siRNA were lower than diabetic scrambled siRNA. Together, these results demonstrate that GLUT1 siRNA restricted glucose transport by inhibiting GLUT1 expression, which decreased retinal glucose concentrations and ameliorated diabetic retinopathy.

  3. Synthesis of micro-sized interconnected Si-C composites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  4. Thermoelectric properties of porous SiC/C composites

    NARCIS (Netherlands)

    Fujisawa, Masashi; Hata, Toshimitsu; Kitagawa, Hiroyuki; Bronsveld, Paul; Suzuki, Youki; Hasezaki, Kazuhiro; Noda, Yasutoshi; Imamura, Yuji

    2008-01-01

    We developed a porous SiC/C composite by oxidizing a SiC/C composite made from a mixed powder of wood charcoal and SiO2 (32-45 mu m) by pulse current sintering at 1600 and 1800 degrees C under a N-2 atmosphere. The microstructures of the porous SiC/C composites with oxidation and the SiC/C composite

  5. Synthesis of MoSi2 by Mechanical Alloying

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The microstructure evolution of mechanical alloyed Mo-66.7%Si powder using the high-energy ball mill has been studied by X-ray diffraction and scanning electron microscopy. The results showed that MoSi2 can be synthesized by MA of Mo-66.7%Si powder mixtures. Cold welding behavior between Mo and Si powders plays an important role in the preparation of MoSi2 by the MA.

  6. Semipolar (202̅3) nitrides grown on 3C-SiC/(001) Si substrates

    Science.gov (United States)

    Dinh, Duc V.; Presa, S.; Akhter, M.; Maaskant, P. P.; Corbett, B.; Parbrook, P. J.

    2015-12-01

    Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si templates (4°-offcut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown Al0.5Ga0.5N/AlN interlayers were employed to produce a single (202̅3) GaN surface orientation. Specular crack-free GaN layers showed undulations along [11̅0]{}3{{C}-{SiC}/{Si}} with a root mean square roughness of about 13.5 nm (50 × 50 μm2). The orientation relationship determined by x-ray diffraction (XRD) was found to be [1̅21̅0]GaN ∥[11̅0]{}3{{C}-{SiC}/{Si}} and [3̅034]GaN ∥[110]3C - SiC/Si . Low-temperature photoluminescence (PL) and XRD measurements showed the presence of basal-plane stacking faults in the layers. PL measurements of (202̅3) multiple-quantum-well and light-emitting diode structures showed uniform luminescence at about 500 nm emission wavelength. A small peak shift of about 3 nm was observed in the electroluminescence when the current was increased from 5 to 50 mA (25-250 A cm-2).

  7. SiC/Si diode trigger circuit provides automatic range switching for log amplifier

    Science.gov (United States)

    1967-01-01

    SiC/Si diode pair provides automatic range change to extend the operating range of a logarithmic amplifier-conversion circuit and assures stability at or near the range switch-over point. the diode provides hysteresis for a trigger circuit that actuates a relay at the desired range extension point.

  8. Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

    DEFF Research Database (Denmark)

    Shiryaev, S.Y.; Jensen, Flemming; Hansen, J. Lundsgaard;

    1997-01-01

    New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the or...

  9. Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering.

    Science.gov (United States)

    Ma, J W; Lee, W J; Bae, J M; Jeong, K S; Oh, S H; Kim, J H; Kim, S-H; Seo, J-H; Ahn, J-P; Kim, H; Cho, M-H

    2015-11-11

    Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.

  10. Green bean biofortification for Si through soilless cultivation: plant response and Si bioaccessibility in pods.

    Science.gov (United States)

    Montesano, Francesco Fabiano; D'Imperio, Massimiliano; Parente, Angelo; Cardinali, Angela; Renna, Massimiliano; Serio, Francesco

    2016-08-17

    Food plants biofortification for micronutrients is a tool for the nutritional value improvement of food. Soilless cultivation systems, with the optimal control of plant nutrition, represent a potential effective technique to increase the beneficial element content in plant tissues. Silicon (Si), which proper intake is recently recommended for its beneficial effects on bone health, presents good absorption in intestinal tract from green bean, a high-value vegetable crop. In this study we aimed to obtain Si biofortified green bean pods by using a Si-enriched nutrient solution in soilless system conditions, and to assess the influence of boiling and steaming cooking methods on Si content, color parameters and Si bioaccessibility (by using an in vitro digestion process) of pods. The Si concentration of pods was almost tripled as a result of the biofortification process, while the overall crop performance was not negatively influenced. The Si content of biofortified pods was higher than unbiofortified also after cooking, despite the cooking method used. Silicon bioaccessibility in cooked pods was more than tripled as a result of biofortification, while the process did not affect the visual quality of the product. Our results demonstrated that soilless cultivation can be successfully used for green bean Si biofortification.

  11. Photoelectrochemistry and Etching of SiC: a Comparison with Si

    NARCIS (Netherlands)

    Kelly, J.J.; van Dorp, D.H.; Weyher, J.L.

    2007-01-01

    The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both KOH and acidic fluoride solutions. The results for p-type and n-type electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting ap

  12. Weld microstructure in cast AlSi9/SiC(p metal matrix composites

    Directory of Open Access Journals (Sweden)

    J. Wysocki

    2009-04-01

    Full Text Available Welded joint in cast AlSi9/SiC/20(p metal matrix composite by manual TIG arc welding using AlMg5 filler metal has been described inhis paper. Cooling curves have been stated, and the influence in distribution of reinforced particles on crystallization and weldmicrostructure. Welded joint mechanical properties have been determined: hardness and tensile.

  13. Fluorescence enhancement of single DNA molecules confined in Si/SiO2 nanochannels

    DEFF Research Database (Denmark)

    Westerlund, F.; Persson, Karl Fredrik; Kristensen, Anders;

    2010-01-01

    We demonstrate that the detected emission intensity from YOYO-labeled DNA molecules confined in 180 nm deep Si/SiO2 nano-funnels changes significantly and not monotonically with the width of the funnel. This effect may be of importance for quantitative fluorescence microscopy and for experiments ...

  14. Simulation and Optimization of β-FeSi2(n)/a-Si(i)/c-Si(p)/μc-Si(p+) Heterojunction Solar Cells%β-FeSi2(n)/a-Si(i)/c-Si(p)/μc-Si(p+)异质结太阳能电池的模拟与优化

    Institute of Scientific and Technical Information of China (English)

    刘振芳; 刘淑平; 聂慧军

    2016-01-01

    运用AFORS-HET软件对β-FeSi2(n)/a-Si(i)/c-Si(p)/μc-Si(p+)HIT型异质结太阳能电池的性能进行了模拟,并对各层参数进行了优化.模拟结果表明,在FeSi2(n)/c-si(p)结构上加上本征层和背场,能显著地提高电池的性能.加入缺陷并优化各项参数后,电池的最后参数为VoC=647.7 mV,JSC=42.29 mA·cm-2,FF=75.32%,EFF=20.63%,β-FeSi2(n)/c-Si(p)太阳能电池的效率提高了2.3%.

  15. Electron transport in n-doped Si/SiGe quantum cascade structures

    NARCIS (Netherlands)

    Lazic, I.; Ikonic, Z.; Milanovic, V.; Kelsall, R.W.; Indjin, D.; Harrison, P.

    2007-01-01

    An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by

  16. Electron transport in n-doped Si/SiGe quantum cascade structures

    NARCIS (Netherlands)

    Lazic, I.; Ikonic, Z.; Milanovic, V.; Kelsall, R.W.; Indjin, D.; Harrison, P.

    2007-01-01

    An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by

  17. Effect of Si addition on AC and DC magnetic properties of (Fe-P)-Si alloy

    Science.gov (United States)

    Gautam, Ravi; Prabhu, D.; Chandrasekaran, V.; Gopalan, R.; Sundararajan, G.

    2016-05-01

    We report a new (Fe-P)-Si based alloy with relatively high induction (1.8-1.9 T), low coercivity (step heat-treatment process and ii) Si addition enhancing the resistivity of the α-Fe matrix phase. As the alloy processing is by conventional wrought metallurgy method, it has the potential for large scale production.

  18. Five-Fold Branched Si Particles in Laser Clad AlSi Functionally Graded Materials

    NARCIS (Netherlands)

    Pei, Y.T.; Hosson, J.Th.M. De

    2001-01-01

    Many five-fold branched Si particles (Sip) were observed in Al–40 wt% Si functionally graded materials produced by a single-step laser cladding process on cast Al-alloy substrate. In this paper the five-fold twinning and growth features of Sip are scrutinized with orientation imaging microscopy and

  19. Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available In heterojunction solar cells, a-Si:H/c-Si heterointerface is of significant importance, since the heterointerface characteristics directly affect junction properties and thus solar cell efficiency. In this study, we have performed time resolved microwave conductivity (TRMC measurements on n-type c-Si wafers passivated on both sides with intrinsic and doped a-Si:H layers in order to investigate electrical property and passivation quality of the a-Si:H/c-Si heterojunctions. It was found that the TRMC decay time and decay curve shape varied with the laser wavelength and power intensity and also depended on sample structures. By using 1064 nm laser pulse with high excitation, differences in the decay curve shape between samples with and without p-n junction were observed. The samples containing p-n junction(s had unique slow decay mode, after the initial fast decay, which we ascribed to the release of carriers from the low-mobility amorphous layer into the high-mobility crystalline wafer as the built-in field of the junction was restored. Experimental results suggest that the TRMC is useful nondestructive technique which is suitable for primary check of the a-Si:H/c-Si heterojunctions during the solar cell fabrication process.

  20. Microstructure of Si Cones Prepared by Ar+-Sputtering Si/Mo Target

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    By Ar+ sputtering onto Si wafers which were surrounded by Mo plates, uniform cones over a large area on the Si surface were formed. Scanning electron microscopic study showed that the cones were formed on the entire surface of the Si wafer. The dimensions of the uniform cones were one micrometer in diameter and 5~6 micrometers high.They were further characterized by means of cross-sectional transmission electron microscopy, with the technique of micro-diffractions. It was found that the cone contained a pure Si regime and a Mo-rich regime. In the binary Mo-Si zone, we identified three distinct areas vertically: (1) domains of Mo-induced Si ordered structures, (2) a small volume of a new Mo3Si2 structural variant, intergrown with the Si ordered structure, and (3) a small amount of pure Mo nanoparticles covering the surface of the cones. The formation of the large and uniform cones may provide a new surface configuration for potential applications in surface science and technology.

  1. Study of dynamics of charge trapping in a-Si:H/SiN TFTs

    NARCIS (Netherlands)

    Merticaru, A.R.; Mouthaan, A.J.; Kuper, F.G.

    2001-01-01

    In this paper we present the study of the failure mechanism responsible for long-term degradation that ultimately leads to instability in a-Si:H/SiN TFTs. The experimental data points we obtain by monitoring in-situ the drain current during gate bias stress (forward and reverse bias) and relaxation

  2. DC Characteristics of Gamma-ray Irradiated SiGe HBT in Comparison with Si BJT

    Institute of Scientific and Technical Information of China (English)

    MENG Xiang-ti; HUANG Qian; WANG Ji-lin; CHEN Pei-yi; TSIEN Pei-hsin

    2006-01-01

    The changes of DC characteristics of SiGe HBT after being submitted to γ-ray irradiation of 700 krad, 7 000 krad and 10 000 krad were compared to those of Si BJT. Generally speaking, Ib and Ib - Ib0 increase with the doses increasing. For SiGe HBT, with the doses increasing, Ic and Ic - Ic0 as well as the related changes of the current gain (β) will decrease at higher Vbe, while for Si BJT, with the doses increasing, after irradiation, Ib and Ic - Ic0 increase; β and its related changes also decrease with their differences, however, tending to be very small at high doses of 7 000 krad and 10 000 krad. Moreover, given the same doses, the decreases of β are much larger than SiGe HBT, which shows that SiGe HBT's anti-radiation performance proves to be better than Si BJT. Still, in SiGe HBT, some strange phenomena were observed: Ic - Ic0 will increase after the radiation of 7 000 krad in less than 0.65 V and as will β in less than 0.75 V. The mechanism of radiation-induced change in DC characteristics was also discussed.

  3. Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces

    NARCIS (Netherlands)

    Zandvliet, H.J.W.; Elswijk, H.B.; Loenen, van E.J.; Tsong, I.S.T.

    1992-01-01

    Surfaces of Si(111)-(7×7) and Si(100)-(2×1) were bombarded by 3-keV Ar+ ions at doses of ≤1012 ions cm-2 to study the effect of individual ion impacts on the atomic structure of surfaces. Atom-resolved images show damaged regions of missing and displaced atoms. Current-imaging tunneling spectroscop

  4. Formation of nanopores in a SiN/SiO2 membrane with an electron beam

    NARCIS (Netherlands)

    Wu, M.Y.; Krapf, D.; Zandbergen, M.; Zandbergen, H.; Batson, P.E.

    2005-01-01

    An electron beam can drill nanopores in SiO2 or silicon nitride membranes and shrink a pore to a smaller diameter. Such nanopores are promising for single molecule detection. The pore formation in a 40 nm thick silicon nitride∕SiO2 bilayer using an electron beam with a diameter of 8 nm (full width o

  5. Anomalous defect processes in Si implanted amorphous SiO[sub 2], II

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, Tetsuo (Shizuoka Institute of Science and Technology, Toyozawa, Fukuroi 437 (Japan)); Fukui, Minoru (Nakanihon Automotive College, Sakahogi, Gifu 480 (Japan)); Okada, Syunji (Nakanihon Automotive College, Sakahogi, Gifu 480 (Japan)); Shimizu-Iwayama, Tsutomu (Aichi University of Education, Igaya, Kariya 448 (Japan)); Hioki, Tatsumi (Toyota Central Research and Development Labs., Inc., Nagakute, Aichi 480-11 (Japan)); Itoh, Noriaki (Department of Physics, Nagoya University, Nagoya 464-01 (Japan))

    1994-06-01

    Aanomalous features of the defects in Si implanted amorphous SiO[sub 2] are reported. The numbers of E[sub 1][sup prime ]centers and B[sub 2] centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implanted samples. Moreover, when H ions are implanted in amorphous SiO[sub 2] predamaged by Si implantation, both of the density and the number of E[sub 1][sup prime ]centers increase and they reach a constant value at a small H dose. We point out that these anomalies can be explained in terms of the difference in the cross-section for defect annihilation in the specimens implanted with Si ions and other ions, in accordance with the homogeneous model proposed by Devine and Golanski. We consider that the main mechanism of defect annihilation is the recombination of an E[sub 1][sup prime ]center and an interstitial O, which is stabilized by an implanted Si, reducing the cross-section in Si-implanted specimens. ((orig.))

  6. Graphene growth at the interface between Ni catalyst layer and SiO2/Si substrate.

    Science.gov (United States)

    Lee, Jeong-Hoon; Song, Kwan-Woo; Park, Min-Ho; Kim, Hyung-Kyu; Yang, Cheol-Woong

    2011-07-01

    Graphene was synthesized deliberately at the interface between Ni film and SiO2/Si substrate as well as on top surface of Ni film using chemical vapor deposition (CVD) which is suitable for large-scale and low-cost synthesis of graphene. The carbon atom injected at the top surface of Ni film can penetrate and reach to the Ni/SiO2 interface for the formation of graphene. Once we have the graphene in between Ni film and SiO2/Si substrate, the substrate spontaneously provides insulating SiO2 layer and we may easily get graphene/SiO2/Si structure simply by discarding Ni film. This growth of graphene at the interface can exclude graphene transfer step for electronic application. Raman spectroscopy and optical microscopy show that graphene was successfully synthesized at the back of Ni film and the coverage of graphene varies with temperature and time of synthesis. The coverage of graphene at the interface depends on the amount of carbon atoms diffused into the back of Ni film.

  7. Coulomb interaction of electron gas in MQWs Si/Si{sub 1-x}Ge{sub x}/Si

    Energy Technology Data Exchange (ETDEWEB)

    Sfina, N. [Unite de Physique des Solides, Departement de Physique, Faculte des Sciences de Monastir, Avenue de l' Environnement, 5019 Monastir (Tunisia)], E-mail: sfina_fsm@yahoo.fr; Lazzari, J.-L. [Centre de Recherche en Matiere Condensee et Nanosciences, CRMC-N, UPR-CNRS 7251, Laboratory associated with the Universite de la Mediterranee and the Universite Paul Cezanne, Campus de Luminy, Case 913, 13288 Marseille cedex 9 (France); Cuminal, Y.; Christol, P. [Centre d' Electronique et de Micro-optoelectronique de Montpellier, CEM2, UMR-CNRS 5507, Universite Montpellier 2 - Sciences et Techniques du Languedoc, CC 067, Place Eugene Bataillon, 34095 Montpellier cedex 5 (France); Said, M. [Unite de Physique des Solides, Departement de Physique, Faculte des Sciences de Monastir, Avenue de l' Environnement, 5019 Monastir (Tunisia)], E-mail: moncef_said@yahoo.fr

    2008-07-01

    We present a theoretical analysis of the conduction and valence-band diagrams of SiGe/Si Multiple Quantum Wells (MQWs), having a specific 'W' geometry, and designed for emission or photodetection around the 1.55 {mu}m wavelength. Peculiar features have been extrapolated by solving self-consistent Schroedinger and Poisson equations, taking into account the electrostatic attraction induced by carrier injection. As a result, Coulomb interaction strongly modifies the band profiles and increases the electron probability density at the quantum well interfaces; the injected carrier concentration enhances electron-hole wave functions overlap and the in-plane oscillator strength. These MQWs structures, strain-compensated on relaxed Si{sub 0.75}Ge{sub 0.25} pseudo-substrates, are potentially interesting for telecom applications.

  8. Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO2 Stack

    Institute of Scientific and Technical Information of China (English)

    JIANG Ran; YAO Li-Ting

    2008-01-01

    TiN as gate electrode in Si/HfO2/TiN/poly-Si stack is evaluated after the postmetal annealing treatments. Interface reactions are investigated using electron-energy-loss spectroscopy and x-ray photoelectron spectroscopy. The work function of the TiN/poly-Si stack shows strong dependence on the postmetal deposition annealing conditions. The interfacia/product in TiN/poly-Si interface is inferred as TiSiN, which is beneficial for the whole high-k stack since TiSiN possesses higher work function compared to TiN and poly-Si.

  9. Absolute Calibration of Si iRMs used for Measurements of Si Paleo-nutrient proxies

    Science.gov (United States)

    Vocke, R. D., Jr.; Rabb, S. A.

    2016-12-01

    Silicon isotope variations (reported as δ30Si and δ29Si, relative to NBS28) in silicic acid dissolved in ocean waters, in biogenic silica and in diatoms are extremely informative paleo-nutrient proxies. The resolution and comparability of such measurements depend on the quality of the isotopic Reference Materials (iRMs) defining the delta scale. We report new absolute Si isotopic measurements on the iRMs NBS28 (RM 8546 - Silica Sand), Diatomite, and Big Batch using the Avogadro measurement approach and comparing them with prior assessments of these iRMs. The Avogadro Si measurement technique was developed by the German Physikalish-Technische Bundesanstalt (PTB) to provide a precise and highly accurate method to measure absolute isotopic ratios in highly enriched 28Si (99.996%) material. These measurements are part of an international effort to redefine the kg and mole based on the Planck constant h and the Avogadro constant NA, respectively (Vocke et al., 2014 Metrologia 51, 361, Azuma et al., 2015 Metrologia 52 360). This approach produces absolute Si isotope ratio data with lower levels of uncertainty when compared to the traditional "Atomic Weights" method of absolute isotope ratio measurement calibration. This is illustrated in Fig. 1 where absolute Si isotopic measurements on SRM 990, separated by 40+ years of advances in instrumentation, are compared. The availability of this new technique does not say that absolute Si isotopic ratios are or ever will be better for normal Si isotopic measurements when seeking isotopic variations in nature, because they are not. However, by determining the absolute isotopic ratios of all the Si iRM scale artifacts, such iRMs become traceable to the metric system (SI); thereby automatically conferring on all the artifact-based δ30Si and δ29Si measurements traceability to the base SI unit, the mole. Such traceability should help reduce the potential of bias between different iRMs and facilitate the replacement of delta

  10. Hysteresis in the Active Oxidation of SiC

    Science.gov (United States)

    Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

    2011-01-01

    Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

  11. Diffusion and electrical behavior of Al implanted into capped Si

    Energy Technology Data Exchange (ETDEWEB)

    Scandurra, A. (Consorzio Catania Ricerche, Catania (Italy)); Galvagno, G. (Istituto di Metodologie e Tecnologie per la Microelettronica-CNR, Catania (Italy)); Raineri, V. (Univ. di Catania (Italy). Dipartimento di Fisica); Frisina, F. (ST-Microelectronics, Catania (Italy)); Torrisi, A. (Univ. di Catania (Italy). Dipartimento di Scienze Chimiche)

    1993-07-01

    The diffusion and the electrical behavior of Al implanted in the dose of 1 x 10[sup 13] to 5 x 10[sup 15] cm[sup [minus]2] at 300 keV in capped and uncapped Si is investigated. The Al-based precipitates which are formed when Al concentration exceeds its solid solubility in Si are electrically inactive. The out-diffusion phenomenon that is always present in uncapped samples reduces the Al dose diffused into Si substrate. A study on the electrical activity of Al implanted in Si through SiO[sub 2], Si[sub 3]N[sub 4], and Si[sub 3]N[sub 4]/SiO[sub 2] capping films also is presented. In these capped samples Al segregation in SiO[sub 2] layer occurs. The electrically active doses are small and comparable to that of uncapped samples. The authors studied the diffusivity of Al in bulk SiO[sub 2] and Si[sub 3]N[sub 4] at 1,200 C. The fast Al diffusion through SiO[sub 2] thin layers is driven by a chemical reaction between Al and SiO[sub 2] starting from the SiO[sub 2]/Si interface.

  12. Carrier recombination in tailored multilayer Si/Si{sub 1−x}Ge{sub x} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Mala, S.A. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Tsybeskov, L., E-mail: tsybesko@njit.edu [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Lockwood, D.J.; Wu, X.; Baribeau, J.-M. [National Research Council, Ottawa, ON, Canada KIA 0R6 (Canada)

    2014-11-15

    Photoluminescence (PL) measurements were performed in Si/Si{sub 1−x}Ge{sub x} nanostructures with a single Si{sub 0.92}Ge{sub 0.08} nanometer-thick layer incorporated into Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si{sub 0.92}Ge{sub 0.08} nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

  13. A novel method to form conducting channels in SiOx(Si ) films for field emission application

    Science.gov (United States)

    Semenenko, M.; Evtukh, A.; Yilmazoglu, O.; Hartnagel, H. L.; Pavlidis, D.

    2010-01-01

    The electrical and field emission properties of SiOx(Si ) films are studied. SiOx(Si ) films of 40-100nm thick are obtained by plasma-enhanced chemical vapor deposition and thermal evaporation of Si powder onto Si substrates. Nanosized electrical conducting channels are formed in SiOx(Si ) films by electrical conditioning at high current densities. The structures with conducting channels demonstrate increased field emission current and decreased threshold voltage compared to as-deposited SiOx(Si ) films. The decrease in threshold voltage for electron field emission is explained by local enhancement of electric field. The diameters of conducting channels are estimated from the effective emission area to be in the range of 1-2nm.

  14. Continuous SiC fiber, CVI SiC matrix composites for nuclear applications: Properties and irradiation effects

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai, E-mail: katohy@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Ozawa, Kazumi; Shih, Chunghao; Nozawa, Takashi [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Shinavski, Robert J. [Hyper-Therm High Temperature Composites, Inc., Huntington Beach, CA (United States); Hasegawa, Akira [Tohoku University, Sendai, Miyagi-ken (Japan); Snead, Lance L. [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    2014-05-01

    Silicon carbide (SiC) continuous fiber-reinforced, SiC-matrix composites (SiC/SiC composites) are industrially available materials that are promising for applications in nuclear environments. The SiC/SiC composites consisting of near-stoichiometric SiC fibers, stoichiometric and fully crystalline SiC matrices, and the pyrocarbon (PyC) or multilayered PyC/SiC interphase between the fiber and the matrix are considered particularly resistant to very high radiation environments. This paper provides a summary compilation of the properties of these composites, specifically those with the chemically vapor-infiltrated (CVI) SiC matrices, including newly obtained results. The properties discussed are both in unirradiated condition and after neutron irradiation to intermediate fluence levels (most data are for <∼10 displacement per atom) at 300–1300 °C.

  15. Step-by-Step Laser Crystallization of Amorphous Si:H/SiNx:H Multilayer for Active Layer in Microcavities

    Institute of Scientific and Technical Information of China (English)

    QIAN Bo; CHEN San; CEN Zhan-Hong; CHEN Kun-Ji; LIU Yan-Song; XU Jun; MA Zhong-Yuan; LI Wei; HUANG Xin-Fan

    2006-01-01

    @@ We report the crystallization and photoluminescence (PL) properties of amorphous Si:H/SiNx :H multilayer (ML)films treated by step-by-step laser annealing. The results of Raman measurements show that the nanocrystalline Si (nc-Si) grains are formed in the a-Si:H layers under the constrained growth mechanism. The blue shift of PL peak with grain size is observed and can be attributed to the quantum confinement effect. For comparison, we also report the crystallization and PL of a-Si:H/SiNx :H ML samples by normal one-step treatment. This method of step-by-step laser treatment will be a candidate to make nc-Si quantum dots in amorphous Si:H/SiNx :H ML as an active layer in microcavities.

  16. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2002-01-01

    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  17. Fabrication and characterization of SiO2/Si heterogeneous nanopillar arrays

    Science.gov (United States)

    Wu, Wengang; Mao, Haiyang; Han, Xiang; Xu, Jun; Wang, Weibing

    2016-07-01

    This work presents arrays of heterogeneous nanopillars stacked with Si bodies and SiO2 heads for biomedical applications. Novel crossed and overlapped spacer techniques are proposed to fabricate the nanopillar arrays in controllable dimensions. For the nanopillars in the arrays, the minimum spacing, body diameter and head tip-radius reach 100 nm, 23 nm and 11 nm, respectively. The maximum height is 1.2 μm. In addition, because of hydrophilic/hydrophobic selectivity between the SiO2 heads and Si bodies, localized nanoliter water-droplet condensing, fluorescein solution extraction and protein capturing are observed on the SiO2 pillar heads. These experiments demonstrate the great potential of heterogeneous nanopillars in biomedical applications.

  18. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    DEFF Research Database (Denmark)

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    Photoluminescence excitation and transmission spectra of Si nanocrystals of different diameters embedded in a SiO2 matrix have been investigated in the broad visible-vacuum ultraviolet spectral range using synchrotron radiation. The dependence of the photoluminescence excitation spectra...... on the nanocrystals size was experimentally established. It is shown that the photoluminescence excitation and absorption spectra are significantly blueshifted with decreasing Si nanocrystal size. A detailed comparison of photoluminescence excitation and absorption spectra with data from theoretical modeling has been...... done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...

  19. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

    Science.gov (United States)

    Gontad, F.; Conde, J. C.; Chiussi, S.; Serra, C.; González, P.

    2016-01-01

    193 nm Excimer laser assisted growth and crystallization of amorphous Si/Ge bilayer patterns with circular structures of 3 μm diameter and around 25 nm total thickness, is presented. Amorphous patterns were grown by Laser induced Chemical Vapor Deposition, using nanostencils as shadow masks and then irradiated with the same laser to induce structural and compositional modifications for producing crystalline SiGe alloys through fast melting/solidification cycles. Compositional and structural analyses demonstrated that pulses of 240 mJ/cm2 lead to graded SiGe alloys with Si rich discs of 2 μm diameter on top, a buried Ge layer, and Ge rich SiGe rings surrounding each feature, as predicted by previous numerical simulation.

  20. Magnetic and mechanical properties of FeSi alloys with high Si content

    Institute of Scientific and Technical Information of China (English)

    LU Feng-shuang; QIAO Liang; BI Xiao-fang

    2006-01-01

    The chemical vapor(CVD) deposition-diffusion method was applied to prepare FeSi alloys with high silicon content up to 6.5%. In spite of various deposition and post-annealing, the sample remains α-Fe bcc structure. The cross section of the composition was analyzed to evaluate the Si content and distribution before and after annealing. The results show that the soft magnetic properties are improved by increasing the silicon content. For the samples containing about 6.5% Si, the coercivity decreases to 60 from 237.3 A/m of the original. It is also obtained that, in addition to the Si content, Si distribution has a large influence on the core loss due to the effect of resistivity. The micro-hardnesses were also evaluated along the cross-section after various annealings.

  1. A model for thermal oxidation of Si and SiC including material expansion

    Energy Technology Data Exchange (ETDEWEB)

    Christen, T., E-mail: thomas.christen@ch.abb.com; Ioannidis, A. [ABB Corporate Research, Segelhofstrasse 1K, CH-5405 Baden (Switzerland); Winkelmann, C. [ETH Zürich, Seminar for Applied Mathematics, Rämistrasse 101, CH-8092 Zürich (Switzerland)

    2015-02-28

    A model based on drift-diffusion-reaction kinetics for Si and SiC oxidation is discussed, which takes the material expansion into account with an additional convection term. The associated velocity field is determined self-consistently from the local reaction rate. The approach allows a calculation of the densities of volatile species in an nm-resolution at the oxidation front. The model is illustrated with simulation results for the growth and impurity redistribution during Si oxidation and for carbon and silicon emission during SiC oxidation. The approach can be useful for the prediction of Si and/or C interstitial distribution, which is particularly relevant for the quality of metal-oxide-semiconductor electronic devices.

  2. Fabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions

    Science.gov (United States)

    Song, Dengyuan; Cho, Eun-Chel; Conibeer, Gavin; Huang, Yidan; Green, Martin A.

    2007-09-01

    Heterojunctions (HJs) were fabricated from p-type Si nanocrystals (Si NCs) embedded in a SiC matrix on an n-type crystalline Si substrate. Transmission electron microscopy revealed that Si NCs are clearly established, with sizes in the range of 3-5nm. The HJ diodes showed a good rectification ratio of 1.0×104 at ±1.0V at 298K. The ideality factor, junction built-in potential, and open-circuit voltage are ˜1.24, 0.72V, and 0.48V, respectively. Measurement of temperature-dependent I-V curves in forward conduction suggests that, in the medium voltage range, junction interface recombination can be described as the dominant current transport mechanism.

  3. Simulation of Nano Si and Al Wires Growth on Si(1O0) Surface

    Institute of Scientific and Technical Information of China (English)

    吴锋民; 黄辉; 吴自勤

    2000-01-01

    Growth of nano Si and Al wires on the Si(100) surfaces is investigated by computer simulation, including the anisotropic diffusion and the anisotropic sticking. The diffusion rates along and across the substrate dimer rows are different, so are the sticking probabilities of an adatom, at the end sites of existing islands or the side sites. Both one-dimensional wires of Si and Al are perpendicular to the dimer rows of the substrate, though the diffusion of Si adatoms is contrary to that of Al adatoms, i.e. Si adatoms diffuse faster along the dimer rows while Al adatoms faster across the dimer rows. The simulation results also show that the shape anisotropy of islands is due to the sticking anisotropy rather than the diffusion anisotropy,which is in agreement with the experiments.

  4. Production of Si by vacuum carbothermal reduction of SiO2 using concentrated solar energy

    Science.gov (United States)

    Loutzenhiser, Peter G.; Tuerk, Ozan; Steinfeld, Aldo

    2010-09-01

    Using concentrated solar radiation as the energy source of high-temperature process heat, the carbothermal reduction of silica to silicon was examined thermodynamically and demonstrated experimentally at vacuum pressures. Reducing the system pressure favors Si(g) formation, enabling its vacuum distillation. Experimentation in a solar reactor was performed in the range 1,997-2,263 K at ˜3×10-3 bar with mixtures of charcoal and silica directly exposed to radiative flux intensities equivalent to 6,500 suns, yielding Si purities ranging from 66.1-79.2 wt.%. The Si purity increased with temperature. Solid characterizations showed SiC and SiO as important reaction intermediaries.

  5. Elastic and inelastic scattering of 50-MeV pions from 28Si and 30Si

    Science.gov (United States)

    Wienands, U.; Hessey, N.; Barnett, B. M.; Rozon, F. M.; Roser, H. W.; Altman, A.; Johnson, R. R.; Gill, D. R.; Smith, G. R.; Wiedner, C. A.; Manley, D. M.; Berman, B. L.; Crawford, H. J.; Grion, N.

    1987-02-01

    Angular distributions of the differential cross section for elastic and inelastic scattering of 50-MeV π+ and π- on 28Si and 30Si have been measured to a relative accuracy of 5-10 We fitted the cross section of elastic π+ and π- scattering from 28Si simultaneously with an optical model using a second-order potential of the Michigan State University form. Our best-fit parameters differ from those given previously. The ratio of the neutron and proton transition-matrix elements for the first Jπ=2+ state in 28Si is found from the inelastic cross section to be 1.13+/-0.09. For 30Si, the ratio is found to be 0.93+/-0.09, which differs significantly from the value derived from lifetime measurements on mirror nuclei.

  6. Low activation brazing materials and techniques for SiC f/SiC composites

    Science.gov (United States)

    Riccardi, B.; Nannetti, C. A.; Petrisor, T.; Sacchetti, M.

    2002-12-01

    A low activation brazing technique for silicon carbide fiber reinforced silicon carbide matrix composites (SiC f/SiC) is presented; this technique is based on the use of the 78Si-22Ti (wt%) eutectic alloy. The joints obtained take advantage of a melting point able to avoid composite fibre-interface degradation. All the joints showed absence of discontinuities and defects at the interface and a fine eutectic structure. Moreover, the joint layer appeared well adherent both to the matrix and the fibre interphase and the brazing alloy infiltration looked sufficiently controlled. The joints of SiC f/SiC composites showed 71±10 MPa almost pure shear strength at RT and up to 70 MPa at 600 °C.

  7. Valence band structure of strained Si/(111)Si1-xGex

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The strained Si techique has been widely adopted in the high-speed and high-performance devices and circuits. Based on the valence band E-k relations of strained Si/(111)Si1-xGex, the valence band and hole effective mass along the [111] and [-110] directions were obtained in this work. In comparison with the relaxed Si, the valence band edge degeneracy was partially lifted, and the significant change was observed band structures along the [111] and [-110] directions, as well as in its corresponding hole effective masses with the increasing Ge fraction. The results obtained can provide valuable references to the investigation concerning the Si-based strained devices enhancement and the conduction channel design related to stress and orientation.

  8. On the compliant behaviour of free-standing Si nanostructures on Si(001) for Ge nanoheteroepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kozlowski, Grzegorz

    2012-04-24

    Selective chemical vapor deposition Ge heteroepitaxy approaches for high quality Ge nanostructure growth with reasonable thermal budget must be developed for local Ge photonic module integration. A promising vision is offered by the compliant substrate effects within nanometer scale Ge/Si heteroepitaxial structures. Here, in contrast to the classical Ge deposition on bulk Si substrates, the thermal and lattice mismatch strain energy accumulated in the Ge epilayer is partially shifted to the free-standing Si nanostructure. This strain partitioning phenomenon is at the very heart of the nanoheteroepitaxy theory (NHE) and, if strain energy levels are correctly balanced, offers the vision to grow defect-free nanostructures of lattice mismatched semiconductors on Si. In case of the Ge/Si heterosystem with a lattice mismatch of 4.2%, the strain partitioning phenomenon is expected to be triggered when free-standing Si nanopillars with the width of 50 nm and below are used. In order to experimentally verify NHE with its compliant substrate effects, a set of free-standing Ge/Si nanostructures with diameter ranging from 150 to 50 nm were fabricated and investigated. The main limitation corresponds to a simultaneous detection of (a) the strain partitioning phenomenon between Ge and Si and (b) the absence of defects on the nano-scale. In this respect, synchrotron-based grazing incidence X-ray diffraction was applied to study the epitaxial relationship, defect and strain characteristics with high resolution and sensitivity in a non-destructive way. Raman spectroscopy supported by finite element method calculations were used to investigate the strain distribution within a single Ge/Si nanostructure. Special focus was devoted to transmission electron microscopy to determine the quality of the Ge epilayer. It was found, that although high quality Ge nanoclusters can be achieved by thermal annealing on Si pillars bigger than 50 nm in width, no proof of strain partitioning

  9. Stepwise redefinition of the SI base units

    CERN Document Server

    Issaev, L K; Khruschov, V V

    2012-01-01

    The four SI base units are proposed to be redefined in two stages: first, the kilogram, mole and ampere should be defined, and then the kelvin. To realize the redefinition of a base unit of the SI in terms of fundamental physical constant (FPC), a principle of coincidence of their physical dimensions is put forward. Direct applying this principle will lead to the changing of the sets of base and derived units in the new SI. If we want to preserve the continuity of the division between base and derived units in the new and the current SI, the principle is to be generalized with the time dimension factor be included. The status of the mole as the base unit of measurement is considered in the current and new SI. It is proposed to redefine the kilogram using a fixed value of the Avogadro constant and then to redefine the kelvin, after the measurement accuracy of the Boltzmann constant has been increased and agreed with the values of other constants of molecular physics.

  10. Optical Diagnostics on HIT-SI3

    Science.gov (United States)

    Everson, Christopher; Jarboe, Thomas; Morgan, Kyle

    2016-10-01

    Interferometry and Thomson Scattering are implemented on the HIT-SI3 (Helicity Injected Torus - Steady Inductive 3) device to provide time resolved measurements of electron density and spatially resolved measurements of electron temperature, respectively. HIT-SI3 is a modification of the original HIT-SI apparatus that uses three injectors instead of two. The scientific aim of HIT-SI3 is to develop a deeper understanding of how injector behavior and interactions influence current drive and spheromak stability. The interferometer system makes use of an intermediate frequency between two parallel 184.3 μm Far-Infrared (FIR) laser cavities which are optically pumped by a CO2 laser. The phase shift in this beat frequency due to the plasma index of refraction is used to calculate the line-integrated electron density. To measure the electron temperature, Thomson Scattered light from a 20 J (1 GW pulse) Ruby laser off of free electrons in the HIT-SI3 plasma is measured simultaneously at four locations across the spheromak (nominally 23 cm minor radius). Polychromators bin the collected light into 3 spectral bands to detect the relative level of scattering. Work supported by the D.O.E.

  11. Effects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of Si1-xGex nanowire

    Science.gov (United States)

    Lai, Yi-Lung; Chang, Tai-Yuan; Chang, Kow-Ming; Chen, Chu-Feng; Lai, Chiung-Hui; Chen, Yi-Ming; Jong-Woei Whang, Allen; Lai, Hui-Lung; Chen, Huai-Yi; Wang, Shiu-Yu

    2015-06-01

    Si1-xGex nanowire biosensors are attractive for their high sensitivity due to the large surface-to-volume ratio, high carrier mobility, and silicon compatibility. In this work, we study the effect of the thickness of the low-temperature Si (LT-Si) buffer layer on an insulator on the sensitivity of oxidized Si1-xGex nanowire samples with different Ge contents by increasing the Si buffer thickness from 20 to 60 nm. 3-Aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. It was demonstrated that, with the proper Ge content and LT-Si buffer thickness, the sensitivity of the Si1-xGex nanowire is high and it can be further improved by Si1-xGex oxidation. This can be attributed to the reduction of the diameter to the nanometer order, which gives rise to an increased surface-to-volume ratio and further enhances the sensitivity of the biosensor.

  12. Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Rana, Kuldeep; Bengu, Erman

    2012-01-01

    ceramic material can be achieved, thus suggesting new industrial applications. The structure and composition of numerous as-synthesized samples were characterized in detail by using a wide range of techniques. Wear and friction properties were also investigated, with polished samples. The properties found......We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process......, molten Si totally or partly infiltrates the remaining open regions. This process forms a dense material with cubic (β-)SiC crystallites, of which the majority is imbedded in amorphous Si. The synthesis of preshaped “sprocket” elements demonstrates that desired shapes of such a dense SiC/Si composite...

  13. Computer simulation of CaSiO3 glass under compression: correlation between Si-Si pair radial distribution function and intermediate range order structure

    Science.gov (United States)

    Lan, Mai Thi; Thuy Duong, Tran; Iitaka, Toshiaki; Van Hong, Nguyen

    2017-06-01

    The structural organization of CaSiO3 glass at 600 K and under pressure of 0-100 GPa is investigated by molecular dynamics simulation (MDS). Results show that the atomic structure of CaSiO3 comprises SiO n and CaO m units considered as basic structural polyhedra. At low pressure, most of the basic structural polyhedra are SiO4, CaO5, CaO6 and CaO7. At high pressure most of the basic structural polyhedra are SiO5, SiO6 and CaO9, CaO10 and CaO11. The distribution of basic structural polyhedra is not uniform resulting in formation of Ca-rich and Si-rich regions. The distribution of SiO4, SiO5 and SiO6 polyhedra is also not uniform, but it tends to form SiO4-, SiO5-, and SiO6-clusters. For the Si-O network, under compression there is a gradual transition from the tetrahedral network (SiO4) to the octahedral network (SiO6) via SiO5 polyhedra. The SiO5-clusters are the same as immediate-phase in the transformation process. The size and shape of SiO4 tetrahedra change strongly under compression. While the size of SiO5 and SiO6 has also changed significantly, but the shape is almost unchanged under compression. The SiO n polyhedra can connect to each other via one common oxygen ion (corner-sharing bond), two common oxygen ions (edge-sharing bond) or three common oxygen ions (face-sharing bond). The Si-Si bond length in corner-sharing bonds is much longer than the ones in edge-sharing and face-sharing bonds. The change of intermediate range order (IRO) structure under compression relating to edge- and face-sharing bonds amongst SiO n at high pressure is the origin of the first peak splitting of the radial distribution functions of Si-Si pair. Under compression, the number of non-bridging oxygen (NBO) decreases. This makes the Si-O network more polymerized. At low pressure, most of the Ca2+ ions incorporate into the Si-O network via NBOs. At high pressure, the amount of NBO decreases, Ca2+ ions mainly incorporate into the Si-O network via bridging oxygen (BO) that

  14. Interfacial transformations in the a-SiC/a-Si/6H-SiC structure caused by high-temperature (1500°C) annealing

    Science.gov (United States)

    Ivanov, P. A.; Samsonova, T. P.

    2008-07-01

    We have studied the reactions that take place at interfaces in an a-SiC/a-Si/6H-SiC sandwich structure, which was obtained by the sequential deposition of amorphous silicon (a-Si) and amorphous silicon carbide (a-SiC) onto a 6H-SiC substrate by ion sputtering in vacuum and then annealed at 1500°C (i.e., above the melting point of silicon). It is shown that the annealing leads to complete îdissipationî of the silicon film in SiC, probably as a result of the dissolution of carbon in the silicon melt and the diffusion of silicon into SiC.

  15. Evaluation of the Machinability of Cast Ti-Si Alloys with Varying Si Content

    Science.gov (United States)

    Hsu, Hsueh-Chuan; Wu, Shih-Ching; Hsu, Shih-Kuang; Hsu, Chih-Cheng; Ho, Wen-Fu

    2016-05-01

    This study evaluated the machinability of a series of binary Ti-Si alloys with a goal of developing a titanium alloy with better machinability than commercially pure titanium (c.p. Ti). The alloys were slotted using a milling machine and end mills under four cutting conditions. Machinability was evaluated through cutting force. The experimental results indicate that alloying with Si significantly improved the machinability of c.p. Ti in terms of cutting force under the present cutting conditions. As the Si content increases, the cutting force decreases then greatly increases. The cutting forces of c.p. Ti and the Ti-Si alloys increased as the feed rate increased from 30 to 60 m/min under the cutting speed of 55 or 110 m/min. The cutting force of Ti-5Si at cutting speed 55 m/min was approximately 49% lower than that of c.p. Ti; at cutting speed 110 m/min, it was approximately 62% lower than that of c.p. Ti. The cutting force of Ti-10Si was significantly higher than those of the other Ti-Si alloys and c.p. Ti, a result that can be explained by a higher degree of hardness (626 HV) and larger amounts of Ti5Si3 (47.10 vol.%). For Ti-5Si, there was no obvious adhesion of chips observed on the cut surfaces. Furthermore, the specimens had the lowest surface roughness (Ra) values, approximately 0.3-0.4 μm, under the four cutting conditions. When cutting force, chip length, and surface roughness results are considered, the Ti-5Si alloy developed in this study is a viable candidate for machining.

  16. A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency.

    Science.gov (United States)

    Wang, Liang-Xing; Zhou, Zhi-Quan; Hao, Hong-Chen; Lu, Ming

    2016-10-21

    A p-n junction was made on p-type Si〈100〉 wafer (15 × 15 × 0.2 mm(3) in size) via phosphorous diffusion at 900 °C. Porous Si (PSi) with ultralow reflectivity (Si emitter in a solution of HF, H2O2 and H2O. The PSi was found to mainly consist of Si nanocrystallites with bandgap widths larger than that of bulk Si. Compared to other micro- or nanostructured Si-based crystalline-Si solar cells found in the literature, this PSi one possessed the feature of a graded band gap, which helped to suppress the surface recombination. In addition, the preparation method was readily applicable on large-scale-sized Si wafers. Also, the PSi acted as a down-shifter that absorbed the ultraviolet/violet light to which the Si solar cell responded poorly, and emitted a red one to which the cell responded well. Front and rear surface passivations were conducted by using SiO2 and Al2O3, respectively, to suppress the surface recombination and to facilitate the charge transfer. Indium-tin-oxide was used as the front electrode that was in good contact with the PSi, and Al was used as the rear one. For such a PSi-emitter crystalline-Si solar cell, enhancements of the photovoltaic responses from the ultraviolet to near-infrared regimes were observed; the open-circuit voltage was 606.8 mV, the short-circuit current density was 40.13 mA cm(-2), the fill factor was 0.779 and the conversion efficiency was 18.97%.

  17. Microhardness evaluation alloys Hf-Si-B; Avaliacao de microdureza de ligas Hf-Si-B

    Energy Technology Data Exchange (ETDEWEB)

    Gigolotti, Joao Carlos Janio; Costa, Eliane Fernandes Brasil [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Rocha, Elisa Gombio; Coelho, Gilberto Carvalho, E-mail: carlosjanio@uol.com.br, E-mail: eliane-costabrasi@hotmail.com, E-mail: cnunes@demar.eel.usp.br, E-mail: elisarocha@alunos.eel.usp.br, E-mail: coelho@demar.eel.usp.br [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

    2014-08-15

    The technological advance has generated increasing demand for materials that can be used under high temperature, what includes intermetallic MR-Si-B (MR = refractory metal) alloys with multiphase structures, that can also be applied in oxide environments. Thus, this work had for objective the micro hardness study of the Hf-Si-B system alloys, heat treated at 1600 deg C, in the Hf rich region. Hf-Si-B alloys had been produced with blades of Hf (min. 99.8%), Si (min. 99.998%) and B (min. 99.5%), in the voltaic arc furnace and heat treated at 1600 deg C under argon atmosphere. The relationship of the phases had been previously identified by X-ray diffraction and contrast in backscattered electron imaging mode. The alloys had their hardness analyzed by method Vickers (micro hardness) with load of 0.05 kgf and 0.2 kgf and application time of 20 s. The results, obtained from the arithmetic mean of measurements for each alloy on the heterogeneous region, showed a mean hardness of 11.08 GPA, with small coefficient of variation of 3.8%. The borides HfB2 (19.34 GPa) e HfB - 11.76 GPa, showed the hardness higher than the silicides Hf2Si (8.57 GPa), Hf5Si3 (9.63 GPa), Hf3Si2 (11.66 GPa), Hf5Si4 (10.00 GPa), HfSi (10.02 GPa) e HfSi2 (8.61 GPa). (author)

  18. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-01

    Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

  19. Characterization of Si/SiGe/Si Deposited on SIMOX SOI by Synchrotron Radiation X-Ray Double-crystal Topography

    Institute of Scientific and Technical Information of China (English)

    Ma Tongda; Tu Hailing; Hu Guangyong; Wang Jing

    2004-01-01

    The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.

  20. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  1. Thermal Properties of Al-50%Si Alloys

    Institute of Scientific and Technical Information of China (English)

    Akio Nishimoto; Katsuya Akamatsu; Kazuyoshi Nakao; Kazuo Ichii

    2004-01-01

    In order to prepare a hypereutectic Al-Si alloy with low coefficients of thermal expansion (CTE), Al-50was produced by powder metallurgy (P/M) and ingot metallurgy (I/M). P/M specimen was prepared by mechanical alloying(MA) and pulsed electric-current sintering (PECS). The microstructures of specimens were characterized by optical microscopy and scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectroscopy (EDS). Vickers microhardness and CTE measurements were performed. The grains in the P/M specimen were refined with increasing MA time. Primary Si and eutectic Si in the I/M specimen were remarkably refined by adding minute amounts of Sr. The CTE of P/M and I/M specimens were estimated as 7.8×10-6 and 10.7×10-6, respectively. These values were as same as a CTE of Al2O3 ceramics.

  2. Si-based infrared optical filters

    Science.gov (United States)

    Balčytis, Armandas; Ryu, Meguya; Seniutinas, Gediminas; Nishijima, Yoshiaki; Hikima, Yuta; Zamengo, Massimiliano; Petruškevičius, Raimondas; Morikawa, Junko; Juodkazis, Saulius

    2015-12-01

    Pyramidal silicon nanospikes, termed black-Si (b-Si), with controlled height of 0.2 to 1 μm, were fabricated by plasma etching over 3-in wafers and were shown to act as variable density filters in a wide range of the IR spectrum 2.5 to 20 μm, with transmission and its spectral gradient dependent on the height of the spikes. Such variable density IR filters can be utilized for imaging and monitoring applications. Narrow IR notch filters were realized with gold mesh arrays on Si wafers prospective for applications in surface-enhanced IR absorption sensing and "cold materials" for heat radiation into atmospheric IR transmission window. Both types of filters for IR: spectrally variable and notch are made by simple fabrication methods.

  3. Light emission from Si quantum dots

    Directory of Open Access Journals (Sweden)

    Philippe M. Fauchet

    2005-01-01

    Full Text Available Si quantum dots (QDs as small as ∼2 nm in diameter have been synthesized by a variety of techniques. Because of quantum confinement and the elimination of bulk or surface defects, these dots can emit light from the near infrared throughout the visible with quantum efficiencies in excess of 10%. The luminescence wavelength range has been extended to longer wavelengths by the addition of light-emitting rare earths such as erbium (Er. Light-emitting devices (LEDs have been fabricated and their performances are starting to approach those of direct band gap semiconductor or organic LEDs. A search for a Si QD-based laser is even under way. The state-of-the-art in the materials science, physics, and device development of luminescent Si QDs is reviewed and areas of future research are pointed out.

  4. Comment on Dimensionless Units in the SI

    CERN Document Server

    Quincey, Paul

    2015-01-01

    The recent paper by Mohr and Phillips (arXiv:1409.2794) describes several problems relating to the treatment of angle measurement within SI, the unit hertz, and quantities that can be considered countable (rather than measureable). However, the proposals that they put forward bring new problems of their own. This paper proposes alternative suggestions that solve the problems less painfully. Specifically, clarifying the text on angle in the SI brochure; relegating the hertz to a "Non-SI unit accepted for use with the International System of Units", with specific application only for "revolutions or cycles per second"; and encouraging countable quantities to be presented as pure numbers, while requiring that a sufficient description of the quantity being counted is given in the accompanying text.

  5. SiC/SiC composite fabricated with carbon nanotube interface layer and a novel precursor LPVCS

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-02-15

    Highlights: • The CNTs were distributed uniformly on the SiC fibers in the fabric by CVD process. • The microstructural evolution of the CNTs interface coating was studied. • The closed porosity was investigated by X-ray tomography. • The liquid precursor LPVCS exhibited high densification efficiency. - Abstract: Continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) have been studied as promising candidate materials for nuclear applications. Three-dimensional SiC/SiC composite was fabricated via polymer impregnation and pyrolysis (PIP) process using carbon nanotubes (CNTs) as the interface layer and LPVCS as the polymer precursor. The microstructural evolution of the fiber/matrix interface was studied. The porosity, mechanical properties, thermal and electrical conductivities of the SiC/SiC composite were investigated. The results indicated that the high densification efficiency of the liquid precursor LPVCS resulted in a low porosity of the SiC/SiC composite. The SiC/SiC composite exhibited non-brittle fracture behavior, however, bending strength and fracture toughness of the composite were relatively low because of the absence of CNTs as the interface layer. The thermal and electrical conductivities of the SiC/SiC composite were low enough to meet the requirements desired for flow channel insert (FCI) applications.

  6. Atomic Diffusion in Cu/Si (111) and Cu/SiO2/Si (111) Systems by Neutral Cluster Beam Deposition

    Institute of Scientific and Technical Information of China (English)

    CAO Bo; LI Gong-Ping; CHEN Xi-Meng; CHO Seong-Jin; KIM Hee

    2008-01-01

    @@ The Cu films are deposited on two kinds of p-type Si (111) substrates by ionized cluster beam (ICB) technique.The interface reaction and atomic diffusion of Cu/Si (111) and Cu/SiO2/Si (111) systems are studied at different annealing temperatures by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results are obtained: For the Cu/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃and 500℃ are 8.5 × 10-15 cm2.s-1 and 3.0 × 10-14 cm2.s-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 × 10-16 cm2.s-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.

  7. Comparison of Cyclic Hysteresis Behavior between Cross-Ply C/SiC and SiC/SiC Ceramic-Matrix Composites

    Directory of Open Access Journals (Sweden)

    Longbiao Li

    2016-01-01

    Full Text Available In this paper, the comparison of cyclic hysteresis behavior between cross-ply C/SiC and SiC/SiC ceramic-matrix composites (CMCs has been investigated. The interface slip between fibers and the matrix existed in the matrix cracking mode 3 and mode 5, in which matrix cracking and interface debonding occurred in the 0° plies are considered as the major reason for hysteresis loops of cross-ply CMCs. The hysteresis loops of cross-ply C/SiC and SiC/SiC composites corresponding to different peak stresses have been predicted using present analysis. The damage parameter, i.e., the proportion of matrix cracking mode 3 in the entire matrix cracking modes of the composite, and the hysteresis dissipated energy increase with increasing peak stress. The damage parameter and hysteresis dissipated energy of C/SiC composite under low peak stress are higher than that of SiC/SiC composite; However, at high peak stress, the damage extent inside of cross-ply SiC/SiC composite is higher than that of C/SiC composite as more transverse cracks and matrix cracks connect together.

  8. Charge trapping studies in SiO2 using high current injection from Si-rich SiO2 films

    Science.gov (United States)

    DiMaria, D. J.; Ghez, R.; Dong, D. W.

    1980-09-01

    The high electron injection phenomenon of Si-rich SiO2 films deposited on top of SiO2 can be used for novel charge trapping studies of sites normally present or purposely introduced in the SiO2. From the position and extent of current ledges observed in dark current as a function of ramped gate voltage, the capture cross section and total number of traps can be determined. Using these measurements with capacitance as a function of gate voltage, the trap distribution centroid and number of trapped charges can also be found. Several experimental examples are given including trapping in thermal SiO2, in chemically vapor deposited (CVD) SiO2, and on W, less than a monolayer thick, sandwiched between thermal and CVD SiO2. These stepped insulator metal-insulator-silicon (SI-MIS) ramp I-V results for the trapping parameters are shown to be in good agreement with those determined using the conventional photo I-V and avalanche injection with flat-band voltage tracking techniques. A numerical simulation of the ramp I-V measurements, assuming electric field-enhanced Fowler-Nordheim tunneling at the Si-rich-SiO2-SiO2 interface, is described and is shown to give good agreement with the experimental data. These techniques for SI-MIS structures are faster and easier, although less accurate than the conventional techniques.

  9. Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Rana, Kuldeep; Bengu, Erman

    2012-01-01

    We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process, ...

  10. Point Defects in SiC

    Science.gov (United States)

    Zvanut, Mary Ellen

    2004-03-01

    Production of high frequency, high power electronic devices using wide bandgap semiconductors has spurred renewed interest in point defects in SiC. Recent electron paramagnetic resonance (EPR) spectroscopy studies focus on centers in as-grown high purity semi-insulating substrates because intrinsic defects are thought to compensate unavoidable shallow centers, thus creating the high resistivity required. The EPR studies address the chemical/structural composition of the defects, the defect level (energy with respect to a band edge with which the defect can accept or release an electron) and thermal stability. Thus far, the positively charged carbon vacancy, the Si vacancy, a carbon-vacancy/carbon antisite pair, and several as yet-unidentified centers have been observed in as-grown electronic-grade 4H-SiC [1-3]. The talk will review the types of defects recently identified in SiC and discuss their possible relationship to compensation. The photo-induced EPR experiments used to determine defect levels will be discussed, with a particular focus on the carbon vacancy. The use of high frequency EPR to resolve the many different types of centers in SiC will also be covered. Finally, the presentation will review the thermal stability of the intrinsic defects detected in as-grown 4H SiC. 1. M. E. Zvanut and V. V. Konovalov, Appl. Phys. Lett. 80, 410 (2002). 2. N.T. Son, Z. Zolnai, and E. Janzen, Phys. Rev. B64, 2452xx (2003). 3. W.E. Carlos, E.R. Glaser, and B.V. Shanabrook, in Proceedings of the 22nd conference on Defects in Semiconductors, Aarhus, Denmark, July 2003.

  11. Dry texturing of mc-Si wafers

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Garima [ENEA-Casaccia, Rome (Italy); CNER, 14-Vigyan Bhawan, University of Rajasthan, Jaipur (India); De Iuliis, Simona; Serenelli, Luca; Salza, Enrico; Tucci, Mario [ENEA-Casaccia, Rome (Italy)

    2011-03-15

    Texturing of mc-Si is a prevailing research topic to improve solar cell efficiency in production. Surface texturing for enhanced absorption in Si has been historically obtained by creating randomly distributed pyramids using anisotropic etchants; but this preferential etching works only on single crystalline silicon because of its crystallographic orientations. A low-cost, large area, random, mask-less texturing scheme is expected to significantly impact terrestrial PV technology and reduce the amount of wet-chemical waste. We propose an approach based on randomly etched mc-Si by RIE system using NF{sub 3} instead of SF{sub 6} or CF{sub 4} to reduce the detrimental formation of carbonaceous or sulfurous contamination at the silicon surface, which results in a surface recombination. To obtain a fast process we have investigated the effect of the chemical etching due to the NF{sub 3} radicals and the ion bombardment induced by Ar. We have found that Arions promote a helpful surface pre-conditioning, while fluorine radicals, produced by NF{sub 3} dissociation, are needed to increase the Si etching rate. Different combinations of flux ratios, gas pressures and RF power have been explored. Efforts have been devoted in obtaining a homogeneous texture on large area wafers, which is inescapable for industrialization. After 10 minutes process effective reflectance values have been measured within the range of 12-14%, and with a-Si/SiN{sub x} the value reduced to 7%. Post-processing minority carrier lifetime values in the range of 10 microseconds have been measured without applying any further chemical cleaning. Additionally, microscopic analysis has been performed to evaluate the surface microstructure morphology (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. MODELING OF a-Si/poly-Si AND a-Si/poly-Si/poly-Si STACKED SOLAR CELLS%多晶硅薄膜太阳电池的计算机模拟

    Institute of Scientific and Technical Information of China (English)

    葛惠春; 薛俊明; 耿新华; 李洪波; 王宗畔; 王庆章; 任慧志

    2002-01-01

    建立了一个多晶硅薄膜太阳电池计算机模型.利用该模型,分别模拟计算了单结多晶硅薄膜电池、a-Si/poly-Si双结电池、a-Si/poly-Si/poly-Si三结电池,并对结果进行了讨论.结果表明实际可行的多晶硅电池应是具有陷光结构的a-Si/poly-Si/poly-Si三结叠层电池,其子电池厚度为0.23/0.95/3μm,最高效率为22.74%.

  13. Ag on Si(111) from basic science to application

    Energy Technology Data Exchange (ETDEWEB)

    Belianinov, Aleksey [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-(√3x√3)R30°}–Ag (Ag-Si-√3 hereafter). In this thesis I systematically explore effects of Ag deposition on the Ag-Si-√3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  14. Three Crystalline Polymorphs of KFeSi04, Potassium Ferrisilicate

    DEFF Research Database (Denmark)

    Bentzen, Janet Jonna

    1983-01-01

    Orthorhombic α-KFeSi04 ( a =0.5478, b =0.9192, c =0.8580 nm), hexagonal β-KFeSiO4 (a =0.5309, c =0.8873 nm), and hexagonal γ-KFeSi04 (a =0.5319, c =0.8815 nm) were synthesized by devitrification of KFeSiO4 glass. Powder X-ray diffraction data are given for all three polymorphs. Alpha KFeSiO4, the......, and synthetic kaliophilite, KAISiO4, respectively, and it is proposed that β- and λ-KFeSiO4 are linked by Si-Fe order-disorder. Beta KFeSiO4 transforms slowly into α-KFeSi04 above 910°C but the transformation was not shown to be reversible in the present dry-heating experiments....

  15. Generation of siRNA Nanosheets for Efficient RNA Interference

    Science.gov (United States)

    Kim, Hyejin; Lee, Jae Sung; Lee, Jong Bum

    2016-04-01

    After the discovery of small interference RNA (siRNA), nanostructured siRNA delivery systems have been introduced to achieve an efficient regulation of the target gene expression. Here we report a new siRNA-generating two dimensional nanostructure in a formation of nanosized sheet. Inspired by tunable mechanical and functional properties of the previously reported RNA membrane, siRNA nanosized sheets (siRNA-NS) with multiple Dicer cleavage sites were prepared. The siRNA-NS has two dimensional structure, providing a large surface area for Dicer to cleave the siRNA-NS for the generation of functional siRNAs. Furthermore, downregulation of the cellular target gene expression was achieved by delivery of siRNA-NS without chemical modification of RNA strands or conjugation to other substances.

  16. Ciprofloxacin@SiO2: Fluorescent nanobubbles

    Indian Academy of Sciences (India)

    M J Rosemary; V Suryanarayanan; P Ganapati Reddy; Ian Maclaren; S Baskaran; T Pradeep

    2003-10-01

    We report a new nanomaterial in which ciprofloxacin molecules are incorporated inside silica nanobubbles, denoted as ciprofloxacin@SiO2. The material has been characterised using UV/Vis absorption spectroscopy, transmission electron microscopy, cyclic voltammetry, and emission spectroscopy. The material is stable and the freestanding particles can be precipitated and redispersed in several solvents. Confinement of the molecule is complete as leaching through the shell is minimal. The material behaves like free ciprofloxacin in solution; however, effects of confinement are manifested. Energy transfer reaction between ciprofloxacin@SiO2 and Tb3+ was monitored by emission spectroscopy. The emission intensity decreased with metal ion exposure indicating selective electronic interaction.

  17. Direct growth of graphene on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Thanh Trung, Pham, E-mail: phamtha@fundp.ac.be; Joucken, Frédéric; Colomer, Jean-François; Robert, Sporken [Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), 61 Rue de Bruxelles, 5000 Namur (Belgium); Campos-Delgado, Jessica; Raskin, Jean-Pierre [Electrical Engineering (ELEN), Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain UCL, 3 place du Levant, Louvain-la-Neuve (Belgium); Hackens, Benoît; Santos, Cristiane N. [Nanoscopic physics (NAPS), Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain UCL, 2 chemin du Cyclotron, Louvain-la-Neuve (Belgium)

    2014-06-14

    Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

  18. Micropower thermoelectric generator from thin Si membranes

    OpenAIRE

    2014-01-01

    We report the development of a Si-based micro thermogenerator build from silicon-on-insulator by using standard CMOS processing. Ultrathin single-crystalline Si membranes, 100 nm in thickness, with embedded n and p-type doped regions electrically connected in series and thermally in parallel, are active elements of the thermoelectric device that generate thermopower under various thermal gradients. This proof-of-concept device produces an output power density of 4.5 µW/cm2, under a temperatur...

  19. Wetting and reaction characteristics of crystalline and amorphous SiO2 derived rice-husk ash and SiO2/SiC substrates with Al-Si-Mg alloys

    Science.gov (United States)

    Bahrami, A.; Pech-Canul, M. I.; Gutiérrez, C. A.; Soltani, N.

    2015-12-01

    A study of the wetting behavior of three substrate types (SiC, SiO2-derived RHA and SiC/SiO2-derived RHA) by two Al-Si-Mg alloys using the sessile drop method has been conducted, using amorphous and crystalline SiO2 in the experiment. Mostly, there is a transition from non-wetting to wetting contact angles, being the lowest θ values achieved with the alloy of high Mg content in contact with amorphous SiO2. The observed wetting behavior is attributed to the deposited Mg on the substrates. A strong diffusion of Si from the SiC/Amorphous RHA substrate into the metal drop explains the free Si segregated at the drop/substrate interface and drop surface. Although incorporation of both SiO2-derived RHA structures into the SiC powder compact substrates increases the contact angles in comparison with the SiC substrate alone, the still observed acute contact angles in RHA/SiC substrates make them promising for fabrication of composites with high volume fraction of reinforcement by the pressureless infiltration technique. The observed wetting characteristics, with decrease in surface tension and contact angles is explained by surface related phenomena. Based on contact angle changes, drop dimensions and surface tension values, as well as on the interfacial elemental mapping, and XRD analysis of substrates, some wetting and reaction pathways are proposed and discussed.

  20. Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO 2 /Si and SiO 2 /SiC interfaces

    Science.gov (United States)

    Tallarida, Massimo; Sohal, Rakesh; Schmeisser, Dieter

    2006-10-01

    Silicon is by far the most important material used in microelectronics, partly due to the excellent electronic properties of its native oxide (SiO 2), but substitute semiconductors are constantly the matter of research. SiC is one of the most promising candidates, also because of the formation of SiO 2 as native oxide. However, the SiO 2/SiC interface has very poor electrical properties due to a very high density of interface states which reduce its functionality in MIS devices. We have studied the electronic properties of defects in the SiO 2/Si and SiO 2/SiC interfaces by means of XAS, XPS and resonant photoemission at the O 1s and the Si 2p edges, using silicon dioxide thermally grown with thicknesses below 10 nm. Our XAS data are in perfect agreement with literature; in addition, resonant photoemission reveals the resonant contributions of the individual valence states. For the main peaks in the valence band we find accordance between the resonant behaviour and the absorption spectra, except for the peaks at -15 eV binding energy, whose resonant photoemission spectra have extra features. One of them is present in both interfaces and is due to similar defects, while another one at lower photon energy is present only for the SiO 2/SiC interface. This is related to a defect state which is not present at the SiO 2/Si interface.

  1. Revision of the Li13Si4 structure

    Directory of Open Access Journals (Sweden)

    Thomas F. Fässler

    2013-12-01

    Full Text Available Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li–Si system is the phase Li13Si4 (tridecalithium tetrasilicide, the structure of which has been determined previously [Frank et al. (1975. Z. Naturforsch. Teil B, 30, 10–13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i the introduction of a split position for one Li site [occupancy ratio 0.838 (7:0.162 (7], (ii the anisotropic refinement of atomic displacement parameters for all atoms, and (iii a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si–Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si–Si dumbbells at z = 0.5.

  2. Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation

    Science.gov (United States)

    Thi Trinh, Cham; Nakagawa, Yoshihiko; Hara, Kosuke O.; Takabe, Ryota; Suemasu, Takashi; Usami, Noritaka

    2016-07-01

    We have succeeded in the observation of high photoresponsivity of orthorhombic BaSi2 film grown on crystalline Si by a vacuum evaporation method, raising the prospect of its promising application in high-efficiency thin-film solar cells. Photocurrent was observed at photon energies larger than 1.28 eV, which corresponds to the band gap of evaporated BaSi2 film, indicating that the photoresponsivity originates from the BaSi2 film. The effect of the substrate temperature on the film’s properties was also investigated. The films grown at a substrate temperature larger than 500 °C are single-phase polycrystalline BaSi2 films, while those grown at a substrate temperature of 400 °C is a mixture of phases. We confirmed that undoped evaporated BaSi2 films are an n-type material with high carrier concentration. High carrier lifetime of 4.8 and 2.7 μs can be found for the films grown at 500 °C and 400 °C, respectively. BaSi2 film grown at a substrate temperature of 500 °C, which is crack-free and single-phase, shows the best photoresponsivity. The maximum value of photocurrent was obtained at photon energy of 1.9 eV, corresponding to an external quantum efficiency of 22% under reverse applied voltage of 2 V.

  3. Fission Fragment Spectroscopy on a $^{28}Si + ^{28}Si$ Quasimolecular Resonance

    CERN Document Server

    Nouicer, R; Sanders, S J; Szanto de Toledo, A; Cavallaro, S; Cavallaro, Sl

    1997-01-01

    Fragment-fragment-$\\gamma$ triple coincident measurements of the $^{28}$Si + $^{28}$Si reaction at E$_{lab.}$ = 111.6 MeV carefully chosen to populate J = 38$^{+}$ resonance have been performed at the VIVITRON tandem facility by using Eurogam Phase II $\\gamma$-ray spectrometer. In the $^{28}$Si + $^{28}$Si exit-channel, the resonance behavior of the $^{28}$Si + $^{28}$Si reaction at the beam energy is clearly confirmed. An unexpected spin disalignment has been observed in the measured angular distributions in the elastic, inelastic, and mutual excitation channels. This disalignment is found to be consistent with particle-$\\gamma$ angular correlations and supported by the molecular model prediction of a ``butterfly motion". The K$^{\\pi}$ = 0$^{+}_{3}$ band corresponding to the large prolate deformation of the $^{28}$Si is more intensely fed in the resonance region. The selective population of high-excited states are discussed within a statistical fusion-fission model. In the $^{32}$S + $^{24}$Mg exit-channel, ...

  4. Giant magnetic coercivity in orthorhombic YNi4Si-type SmNi4Si compound

    Science.gov (United States)

    Yao, Jinlei; Morozkin, A. V.

    2015-10-01

    Magnetic properties, magnetocaloric effect and heat capacity of the YNi4Si-type SmNi4Si compound have been investigated. SmNi4Si exhibits ferromagnetic transition at 17 K. Below ~9 K, the magnetic isotherms of SmNi4Si show metamagnetic-like behavior with critical field of 20 kOe at 5 K. Heat capacity measurements of SmNi4Si show the electronic heat capacity coefficient γ=94 mJ/(mol K2), phonon coefficient β=0.35 mJ/(mol K4) and Debye temperature TD=310 K. The magnetocaloric effect of SmNi4Si is calculated in terms of isothermal magnetic entropy change which is obtained by the isothermal magnetization (ΔSmmagn) and heat capacity measurements (ΔSmheat). Both ΔSmmagn and ΔSmheat reach a maximum of -1.0 J/kg K at 17 K for a field change of 50 kOe and they show positive values for a field change of 20 kOe at ~9 K. Below 15 K, SmNi4Si shows large magnetic hysteresis with considerable remanence. At 5 K it exhibits giant coercive field of 58 kOe in an applied field of 90 kOe.

  5. Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

    Science.gov (United States)

    Yang, Zhen

    Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

  6. Oxidation induced stress in SiO2/SiC structures

    Science.gov (United States)

    Li, Xiuyan; Ermakov, Alexei; Amarasinghe, Voshadhi; Garfunkel, Eric; Gustafsson, Torgny; Feldman, Leonard C.

    2017-04-01

    Physical stress in SiO2/SiC stacks formed by the thermal oxidation of SiC is studied experimentally through both room temperature ex-situ and variable temperature (25-1150 °C) in-situ investigations. Mechanisms giving rise to the stress are a thermal component, associated with differences in thermal expansion coefficients of the oxide and the substrate, and an intrinsic component associated with the different atomic densities and structure of the film and substrate. Ex-situ results show a ˜108 Pa compressive stress in the SiO2 film in a SiO2/SiC stack with a strong crystal face dependence (C face(000ī) and Si face (0001)) and processing (temperature, growth rate) dependence. Real-time stress determination demonstrates that at temperatures above ˜900 °C, the total intrinsic stress and a portion of the thermal stress may be relieved. On the basis of these findings, a viscous model is proposed to discuss the stress relaxation.

  7. Planetary and meteoritic Mg/Si and d30Si variations inherited from solar nebula chemistry

    CERN Document Server

    Dauphas, Nicolas; Burkhardt, Christoph; Kobayashi, Hiroshi; Kurosawa, Kosuke

    2015-01-01

    The bulk chemical compositions of planets are uncertain, even for major elements such as Mg and Si. This is due to the fact that the samples available for study all originate from relatively shallow depths. Comparison of the stable isotope compositions of planets and meteorites can help overcome this limitation. Specifically, the non-chondritic Si isotope composition of the Earth's mantle was interpreted to reflect the presence of Si in the core, which can also explain its low density relative to pure Fe-Ni alloy. However, we have found that angrite meteorites display a heavy Si isotope composition similar to the lunar and terrestrial mantles. Because core formation in the angrite parent-body (APB) occurred under oxidizing conditions at relatively low pressure and temperature, significant incorporation of Si in the core is ruled out as an explanation for this heavy Si isotope signature. Instead, we show that equilibrium isotopic fractionation between gaseous SiO and solid forsterite at 1370 K in the solar neb...

  8. Fiber creep rate and high-temperature properties of SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Lewinsohn, C.A.; Jones, R.H.; Youngblood, G.E.; Henager, C.H. Jr. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    Results of studies aimed at relating the fiber creep rate to the subcritical crack growth rate and fracture properties of SiC/SiC composites have demonstrated that the crack growth rate in a bulk composite is controlled by the fiber creep rate. This result was demonstrated for Nicalon-CG and Hi-Nicalon fiber reinforced material where a 50--75 c shift in the creep strength of the fiber resulted in a similar shift in the crack growth rate of the composite. Irradiation enhanced creep of SiC fibers and matrix must also be considered in the performance assessment of SiC/SiC composites. The shape of the displacement versus time curve for composites containing Hi-Nicalon fibers were similar to those of the previously tested materials, containing Ceramic-grade fibers, that exhibited subcritical crack growth controlled by time-dependent relaxation of the fiber-bridging stresses due to fiber creep. The crack velocity in the CG-C composites at 1100 C in argon was very close to that of the Hi-C materials at 1150--1175 C, this roughly corresponds to the temperature differential shown by DiCarlo et al. to obtain the same relaxation in 1 hour bend stress relaxation (BSR) tests in the two fibers. This supports the hypothesis that subcritical crack growth in SiC/SiC composites is controlled by fiber creep.

  9. Ultraviolet Emission Lines of Si ii in Quasars: Investigating the "Si ii Disaster"

    Science.gov (United States)

    Laha, Sibasish; Keenan, Francis P.; Ferland, Gary J.; Ramsbottom, Catherine A.; Aggarwal, Kanti M.

    2016-07-01

    The observed line intensity ratios of the Si ii λ1263 and λ1307 multiplets to that of Si ii λ1814 in the broad-line region (BLR) of quasars are both an order of magnitude larger than the theoretical values. This was first pointed out by Baldwin et al., who termed it the “Si ii disaster,” and it has remained unresolved. We investigate the problem in the light of newly published atomic data for Si ii. Specifically, we perform BLR calculations using several different atomic data sets within the CLOUDY modeling code under optically thick quasar cloud conditions. In addition, we test for selective pumping by the source photons or intrinsic galactic reddening as possible causes for the discrepancy, and we also consider blending with other species. However, we find that none of the options investigated resolve the Si ii disaster, with the potential exception of microturbulent velocity broadening and line blending. We find that a larger microturbulent velocity (˜ 500 {km} {{{s}}}-1) may solve the Si ii disaster through continuum pumping and other effects. The CLOUDY models indicate strong blending of the Si ii λ1307 multiplet with emission lines of O i, although the predicted degree of blending is incompatible with the observed λ1263/λ1307 intensity ratios. Clearly, more work is required on the quasar modeling of not just the Si ii lines but also nearby transitions (in particular those of O i) to fully investigate whether blending may be responsible for the Si ii disaster.

  10. Long Spin Relaxation and Coherence Times of Electrons In Gated Si/SiGe Quantum Dots

    Science.gov (United States)

    He, Jianhua; Tyryshkin, A. M.; Lyon, S. A.; Lee, C.-H.; Huang, S.-H.; Liu, C. W.

    2012-02-01

    Single electron spin states in semiconductor quantum dots are promising candidate qubits. We report the measurement of 250 μs relaxation (T1) and coherence (T2) times of electron spins in gated Si/SiGe quantum dots at 350 mK. The experiments used conventional X-band (10 GHz) pulsed electron spin resonance (pESR), on a large area (3.5 x 20 mm^2) dual-gate undoped high mobility Si/SiGe heterostructure sample, which was patterned with 2 x 10^8 quantum dots using e-beam lithography. Dots having 150 nm radii with a 700 nm period are induced in a natural Si quantum well by the gates. The measured T1 and T2 at 350 mK are much longer than those of free 2D electrons, for which we measured T1 to be 10 μs and T2 to be 6.5 μs in this gated sample. The results provide direct proof that the effects of a fluctuating Rashba field have been greatly suppressed by confining the electrons in quantum dots. From 0.35 K to 0.8 K, T1 of the electron spins in the quantum dots shows little temperature dependence, while their T2 decreased to about 150 μs at 0.8 K. The measured 350 mK spin coherence time is 10 times longer than previously reported for any silicon 2D electron-based structures, including electron spins confined in ``natural quantum dots'' formed by potential disorder at the Si/SiO2ootnotetextS. Shankar et al., Phys. Rev. B 82, 195323 (2010) or Si/SiGe interface, where the decoherence appears to be controlled by spin exchange.

  11. The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate

    Institute of Scientific and Technical Information of China (English)

    JIN Chenggang; WU Xuemei; ZHUGE Lanjian; SHA Zhendong

    2007-01-01

    ZnO/SiC multilayer film has been fabricated on a Si (111) substrate with a silicon carbide (SIC) buffer layer using the RF (radio frequency)-magnetron technique with targets of a ceramic polycrystalline zinc oxide (ZnO) and a composite target of pure C plate with attached Si chips on the surface. The as-deposited films were annealed at a tempera-ture range of 600-1000℃ under nitrogen atmosphere. The structure and photoluminescence (PL) properties of the samples were measured using X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy and Pl spectrophotometry. By increasing the annealing temperature to 800℃, it is found that all the ZnO peaks have the strongest intensities, and the crystallinity of ZnO is more consistent on the SiC buffer layer. Further increase of the annealing temperature allows the ZnO and SiC layers to penetrate one another, which makes the interface between ZnO and SiC layer become more and more complicated, thus reduces the crystallinities of ZnO and SiC. The PL properties of a ZnO/ SiC multilayer are investigated in detail. It is discovered that the PL intensities of these bands reach their maximum after being annealed at 800℃. The PL peaks shift with an increase in the annealing temperature, which is due to the ZnO and SiC layers penetrating reciprocally. This makes the interface more impacted and complicated, which induces band structure deformation resulting from lattice deformation.

  12. Bubble formation in oxide scales on SiC

    Science.gov (United States)

    Mieskowski, D. M.; Mitchell, T. E.; Heuer, A. H.

    1984-01-01

    The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

  13. Bubble formation in oxide scales on SiC

    Science.gov (United States)

    Mieskowski, D. M.; Mitchell, T. E.; Heuer, A. H.

    1984-01-01

    The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

  14. Heteroepitaxy of Ge-Si{sub 1{minus}x}Ge{sub x} superlattices on Si (100) substrates by GeH{sub 4}-Si MBE

    Energy Technology Data Exchange (ETDEWEB)

    Orlov, L.K.; Tolomasov, V.A.; Potapov, A.V.; Drozdov, Yu.N. [Russian Academy of Sciences, Nizhny Novgorod (Russian Federation). Inst. for Physics of Microstructures; Vdovin, V.I. [Inst. for Rare Metals Giredmet, Moscow (Russian Federation)

    1996-12-31

    The authors applied GeH{sub 4}-SI MBE for growing Ge-Si{sub 1{minus}x}Ge{sub x} superlattices on Si(100). They investigated the distribution and the structure of defects inside heteroepitaxial Si{sub 1{minus}x}Ge{sub x} layers grown on Si(100). It was shown that the system has unique peculiarities of a dislocation structure formation. They found out that the plastic deformation on a layer-substrate heteroboundary eliminates strong elastic deformation inside the grown layer.

  15. Synthesis, characterization and luminescence of europium perchlorate with MABA-Si complex and coating structure SiO2 @Eu(MABA-Si) luminescence nanoparticles.

    Science.gov (United States)

    Fu, Zhi-Fang; Li, Wen-Xian; Bai, Juan; Bao, Jin-Rong; Cao, Xiao-Fang; Zheng, Yu-Shan

    2017-05-01

    This article reports a novel category of coating structure SiO2 @Eu(MABA-Si) luminescence nanoparticles (NPs) consisting of a unique organic shell, composed of perchlorate europium(III) complex, and an inorganic core, composed of silica. The binary complex Eu(MABA-Si)3 ·(ClO4 )3 ·5H2 O was synthesized using HOOCC6 H4 N(CONH(CH2 )3 Si(OCH2 CH3 )3 )2 (MABA-Si) and was used as a ligand. Furthermore, the as-prepared silica NPs were successfully coated with the -Si(OCH2 CH3 )3 group of MABA-Si to form Si-O-Si chemical bonds by means of the hydrolyzation of MABA-Si. The binary complexes were characterized by elemental analysis, molar conductivity and coordination titration analysis. The results indicated that the composition of the binary complex was Eu(MABA-Si)3 ·(ClO4 )3 ·5H2 O. Coating structure SiO2 @Eu(MABA-Si) NPs were characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and infrared (IR) spectra. Based on the SEM and TEM measurements, the diameter of core-SiO2 particles was ~400 and 600 nm, and the thickness of the cladding layer Eu(MABA-Si) was ~20 nm. In the binary complex Eu(MABA-Si)3 ·(ClO4 )3 ·5H2 O, the fluorescence spectra illustrated that the energy of the ligand MABA-Si transferred to the energy level for the excitation state of europium(III) ion. Coating structure SiO2 @Eu(MABA-Si) NPs exhibited intense red luminescence compared with the binary complex. The fluorescence lifetime and fluorescence quantum efficiency of the binary complex and of the coating structure NPs were also calculated. The way in which the size of core-SiO2 spheres influences the luminescence was also studied. Moreover, the luminescent mechanisms of the complex were studied and explained. Copyright © 2016 John Wiley & Sons, Ltd.

  16. Subsurface Growth of CoSi2 by Deposition of Co on Si-Capped CoSi2 Seed Regions

    Science.gov (United States)

    Fathauer, R. W.; George, T.; Pike, W. T.

    1991-01-01

    At a growth temperature of 800 C, Co deposited on Si(111) diffuses through a Si cap and exhibits oriented growth on buried CoSi2 grains, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 provided the thickness of the Si cap is less than a critical value between 100 and 200 nm for a deposition rate of 0.01 nm/s. Steady-state endotaxy is modeled under the assumption that the process is controlled by Co diffusion.

  17. Epitaxial Growth of Si(111)/Er2O3(111) Structure on Si(111) by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    XU Run; TANG Min-Yan; ZHU Yan-Yan; WANG Lin-Jun

    2011-01-01

    The Si overlayers are grown by molecular beam epitaxy on atomically smllth Er2O3(111) films prepared on Si(111) substrates. Single crystalline Si overlayers are achieved and are evident due to the spot-like reflective high energy electron diffraction(RHEED) patterns and x-ray diffraction patterns. The epitaxial relationship of the Si overlayer along the surface with respect to the orientation of EreO3 and the Si substrate is as follows:overgrown Si(111)//Er2O3(111)//Si(111).The rough surface of Si overlayers, as identified by both RHEED patterns and atomic force microscopy images, indicates a three-dimensional growth mode. The reason for this is based on the interfacial energy argument. Further growth of Er2O3 films on this rough Si overlayer leads to the polycrystalline nature of the topmost Er2O3 layer.

  18. A Study on Switching Frequency Limitation in Combination of Si-IGBT and SiC-SBD

    Science.gov (United States)

    Kamaga, Masamu; Sung, Kyungmin; Ohashi, Hiromichi

    In this paper, a power converter in combination of 1200V Si-IGBT and SiC-SBD is investigated for decrease of devise loss in compare with Si-PiN diode. To use device simulation which is based on considering of switching experimental results and static characteristics is employed to estimate device loss. In device simulation, also, we adjust an anode injection efficiency of Si-IGBT to increase switching speed and optimize trade-off relation between on-state voltage and switching loss of Si-IGBT due to minimize total device loss. As the device simulation result, the switching frequency of in combination optimized Si-IGBT and SiC-SBD has approximately three times as high as Si-IGBT with Si-PiN diode. Moreover, in this paper, the limitation of switching frequency by comprehensive total device loss with present heat cooling ability is discussed.

  19. On-Demand Fabrication of Si/SiO2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation.

    Science.gov (United States)

    Cao, Huaxiang; Li, Xinhua; Zhou, Bukang; Chen, Tao; Shi, Tongfei; Zheng, Jianqiang; Liu, Guangqiang; Wang, Yuqi

    2017-12-01

    We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO2 nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO2 nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction and oxide thickness evolution are investigated. Through analyzing the morphology evolutions of polystyrene particles, we give a quantitative description on the diameter variations of polystyrene particles with the etching time of plasma etching. Based on this, pure Si NW arrays with controllable geometry are generated. Then the oxide dynamic of Si NW is analyzed by the extended Deal-Grove model. By control, the initial Si NWs and the thermal oxidation time, the well-aligned Si/SiO2 composite NW arrays with controllable geometry are obtained.

  20. On-Demand Fabrication of Si/SiO2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation

    Science.gov (United States)

    Cao, Huaxiang; Li, Xinhua; Zhou, Bukang; Chen, Tao; Shi, Tongfei; Zheng, Jianqiang; Liu, Guangqiang; Wang, Yuqi

    2017-02-01

    We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO2 nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO2 nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction and oxide thickness evolution are investigated. Through analyzing the morphology evolutions of polystyrene particles, we give a quantitative description on the diameter variations of polystyrene particles with the etching time of plasma etching. Based on this, pure Si NW arrays with controllable geometry are generated. Then the oxide dynamic of Si NW is analyzed by the extended Deal-Grove model. By control, the initial Si NWs and the thermal oxidation time, the well-aligned Si/SiO2 composite NW arrays with controllable geometry are obtained.

  1. NMR AND ESR STUDIES ON ANNEALING EFFECTS IN a-Si : F : H AND a-Si : H

    OpenAIRE

    1981-01-01

    Measurements of NMR of F in a-Si :F : H and a-Si : F have been carried out and the results are compared with those of H in a-Si : F : H and a-Si : H. Effects of motional narrowing on the linewidth of F NMR in a-Si : F : H show that some fraction of F is incorporated in the form of SiF4 or (SiF2)n which tends to move easily. When samples are annealed, the increase in the ESR center density is remarkable in a-Si : F : H and a-Si : H corresponding to the decrease in the H content, but the increa...

  2. Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100)

    Science.gov (United States)

    Kim, Kun HO; Bai, G.; Nicolet, MARC-A.; Mahan, John E.; Geib, Kent M.

    1991-01-01

    The effects of implantation damage and the chemical species of the implant on structural and electrical properties of epitaxial ReSi2 films on Si(100) implanted with Si-28 or Ar-40 ions, at doses ranging from 10 to the 13th/sq cm to 10 to the 15th/sq cm, were investigated using the backscattering spectrometry, XRD, and the van der Pauw techniques. Results showed that ion implantation produces damage in the film, which increases monotonically with dose; the resistivity of the film decreases monotonically with dose.

  3. A thermodynamic description of the Si-rich Si-Fe system

    Institute of Scientific and Technical Information of China (English)

    Kai TANG; Merete Tangstad

    2012-01-01

    Phase equilibria in the Si-rich domain of the Si-Fe system have been reassessed based on the recent DTA experimental results.Thermodynamic properties of liquid phase have been reassessed using the associated solution model.The properties of DIAMOND_A4 mixture phase have been added in order to evaluate the phase equilibria for the pure silicon materials.The assessed system is able to reproduce the experimental values in the whole composition range of the Si-Fe system.

  4. Hot Corrosion Behavior of Stainless Steel with Al-Si/Al-Si-Cr Coating

    Science.gov (United States)

    Fu, Guangyan; Wu, Yongzhao; Liu, Qun; Li, Rongguang; Su, Yong

    2017-03-01

    The 1Cr18Ni9Ti stainless steel with Al-Si/Al-Si-Cr coatings is prepared by slurry process and vacuum diffusion, and the hot corrosion behavior of the stainless steel with/without the coatings is studied under the condition of Na2SO4 film at 950 °C in air. Results show that the corrosion kinetics of stainless steel, the stainless steel with Al-Si coating and the stainless steel with Al-Si-Cr coating follow parabolic laws in several segments. After 24 h corrosion, the sequence of the mass gain for the three alloys is the stainless steel with Al-Si-Cr coating steel with Al-Si coating steel without any coating. The corrosion products of the three alloys are layered. Thereinto, the corrosion products of stainless steel without coating are divided into two layers, where the outside layer contains a composite of Fe2O3 and FeO, and the inner layer is Cr2O3. The corrosion products of the stainless steel with Al-Si coating are also divided into two layers, of which the outside layer mainly consists of Cr2O3, and the inner layer is mainly SiO2. The corrosion film of the stainless steel with Al-Si-Cr coating is thin and dense, which combines well with substrate. Thereinto, the outside layer is mainly Cr2O3, and the inside layer is Al2O3. In the matrix of all of the three alloys, there exist small amount of sulfides. Continuous and protective films of Cr2O3, SiO2 and Al2O3 form on the surface of the stainless steel with Al-Si and Al-Si-Cr coatings, which prevent further oxidation or sulfide corrosion of matrix metals, and this is the main reason for the much smaller mass gain of the two alloys than that of the stainless steel without any coatings in the 24 h hot corrosion process.

  5. SiC reinforced-MoSi sub 2 based matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Petrovic, J.J.; Honnell, R.E.

    1990-01-01

    SiC reinforced-MoSi{sub 2} based matrix composites possess very significant potential as high temperature structural materials for temperatures above 1200{degree}C in oxidizing environments, due to their combination of oxidation resistance, thermodynamic stability, machinability, elevated temperature ductility and strength, and ability to alloy the MoSi{sub 2} matrix with other silicides. The fabrication, microstructures, oxidation, and mechanical properties of these materials are described, and their current properties are compared to high temperature metals and structural ceramics. 22 refs., 5 figs., 2 tabs.

  6. How do students from Student Incubators (SI) use networks and how can SI support the activity?

    DEFF Research Database (Denmark)

    Andersen, Henrik Mariendal

    2015-01-01

    This paper examines Student Entrepreneur’s (SE) use of networks as part of their activities in a Student Incubator (SI). Recommendations are made as to how SI can create activities to support students' use of internal and external relationships and discusses the paradox between running a learning...... is on SEs because students are likely to have a smaller (in size), less well-founded and limited professional network. In addition, an SI is assumed to be characterized by “limitations” related to their student status. So far none has paid any attention to how SEs "compensate for" and/or develop relevant...... and "performance" (revenues, survival rate, growth) of the SE....

  7. Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Grydlik, Martyna; Groiss, Heiko; Brehm, Moritz; Schaeffler, Friedrich [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz (Austria); Boioli, Francesca; Montalenti, Francesco; Miglio, Leo [L-NESS and Department of Material Science, University of Milano-Bicocca (Italy); Gatti, Riccardo; Devincre, Benoit [LEM, CNRS/ONERA, Chatillon Cedex (France)

    2012-07-02

    We show that suitable pit-patterning of a Si(001) substrate can strongly influence the nucleation and the propagation of dislocations during epitaxial deposition of Si-rich Si{sub 1-x}Ge{sub x} alloys, preferentially gettering misfit segments along pit rows. In particular, for a 250 nm layer deposited by molecular beam epitaxy at x{sub Ge} = 15%, extended film regions appear free of dislocations, by atomic force microscopy, as confirmed by transmission electron microscopy sampling. This result is quite general, as explained by dislocation dynamics simulations, which reveal the key role of the inhomogeneous distribution in stress produced by the pit-patterning.

  8. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    Energy Technology Data Exchange (ETDEWEB)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  9. 29Si NMR spin-echo decay in YbRh2Si2

    Science.gov (United States)

    Kambe, S.; Sakai, H.; Tokunaga, Y.; Hattori, T.; Lapertot, G.; Matsuda, T. D.; Knebel, G.; Flouquet, J.; Walstedt, R. E.

    2016-02-01

    29Si nuclear magnetic resonance (NMR) has been measured in a 29Si-enriched single crystal sample of YbRh2Si2. The spin-echo decay for applied field H ∥, ⊥ the c-axes has been measured at 100 K. A clear spin-echo decay oscillation is observed for both cases, possibly reflecting the Ruderman-Kittel (RK) interaction. Since the observed oscillation frequency depends on the direction of applied magnetic field, anisotropic RK coupling and pseudo-dipolar (PD) interactions may not be negligible in this compound. The origin of spin-echo decay oscillations is discussed.

  10. Thermophysical and mechanical properties of SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J.; Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1998-09-01

    The key thermophysical and mechanical properties for SiC/SiC composites are summarized, including temperature-dependent tensile properties, elastic constants, thermal conductivity, thermal expansion, and specific heat. The effects of neutron irradiation on the thermal conductivity and dimensional stability (volumetric swelling, creep) of SiC is discussed. The estimated lower and upper temperatures limits for structural applications in high power density fusion applications are 400 and 1000 C due to thermal conductivity degradation and void swelling considerations, respectively. Further data are needed to more accurately determine these estimated temperature limits.

  11. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaia, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey

    2017-01-01

    crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping eliminates these defects in the case of growth on SiC templates...

  12. Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD

    Science.gov (United States)

    Shen, Yanjiao; Chen, Jianhui; Yang, Jing; Chen, Bingbing; Chen, Jingwei; Li, Feng; Dai, Xiuhong; Liu, Haixu; Xu, Ying; Mai, Yaohua

    2016-11-01

    The epitaxial-Si (epi-Si) growth on the crystalline Si (c-Si) wafer could be tailored by the working pressure in plasma-enhanced chemical vapor deposition (PECVD). It has been systematically confirmed that the epitaxial growth at the hydrogenated amorphous silicon (a-Si:H)/c-Si interface is suppressed at high pressure (hp) and occurs at low pressure (lp). The hp a-Si:H, as a purely amorphous layer, is incorporated in the lp-epi-Si/c-Si interface. We find that: (i) the epitaxial growth can also occur at a-Si:H coated c-Si wafer as long as this amorphous layer is thin enough; (ii) with the increase of the inserted hp layer thickness, lp epi-Si at the interface is suppressed, and the fraction of a-Si:H in the thin films increases and that of c-Si decreases, corresponding to the increasing minority carrier lifetime of the sample. Not only the epitaxial results, but also the quality of the thin films at hp also surpasses that at lp, leading to the longer minority carrier lifetime of the hp sample than the lp one although they have the same amorphous phase. Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. E2015201203) and the International Society for Theoretical Chemical Physics of China (Grant No. 2015DFE62900).

  13. Synthesis of crystalline Si-based nanosheets by extraction of Ca from CaSi2 in inositol hexakisphosphate solution

    Science.gov (United States)

    Meng, Xiang; Sasaki, Kenta; Sano, Koki; Yuan, Peiling; Tatsuoka, Hirokazu

    2017-05-01

    Crystalline Si-based nanosheets were successfully synthesized from CaSi2 by a simple soft chemical synthetic method in solution. By immersing CaSi2 powder or CaSi2/Si substrates in an inositol hexakisphosphate (IP6) solution, Ca atoms were extracted from the CaSi2 particles, then Si-based nanosheets were formed. The morphological, structural and optical properties of the Si-based nanosheets were investigated. It is noted that the thin Si-based nanosheets stacked with a void space formed bundle structures, and the nanosheets were easily exfoliated from the bundles to expose the surfaces corresponding to the Si{111} planes. Meanwhile, the surface of the Si nanosheets might be terminated by O, H, or OH bonds. The Si-based nanosheet bundles were then formed and directly rooted to the Si(111) substrates, and had a remarkably highly symmetrical morphology. This study demonstrated a simple method for preparing Si-based nanosheets, and electro- and photo-chemical applications would possibly be expected, such as in lithium ion batteries.

  14. New Insights into Understanding Irreversible and Reversible Lithium Storage within SiOC and SiCN Ceramics

    Directory of Open Access Journals (Sweden)

    Magdalena Graczyk-Zajac

    2015-02-01

    Full Text Available Within this work we define structural properties of the silicon carbonitride (SiCN and silicon oxycarbide (SiOC ceramics which determine the reversible and irreversible lithium storage capacities, long cycling stability and define the major differences in the lithium storage in SiCN and SiOC. For both ceramics, we correlate the first cycle lithiation or delithiation capacity and cycling stability with the amount of SiCN/SiOC matrix or free carbon phase, respectively. The first cycle lithiation and delithiation capacities of SiOC materials do not depend on the amount of free carbon, while for SiCN the capacity increases with the amount of carbon to reach a threshold value at ~50% of carbon phase. Replacing oxygen with nitrogen renders the mixed bond Si-tetrahedra unable to sequester lithium. Lithium is more attracted by oxygen in the SiOC network due to the more ionic character of Si-O bonds. This brings about very high initial lithiation capacities, even at low carbon content. If oxygen is replaced by nitrogen, the ceramic network becomes less attractive for lithium ions due to the more covalent character of Si-N bonds and lower electron density on the nitrogen atom. This explains the significant difference in electrochemical behavior which is observed for carbon-poor SiCN and SiOC materials.

  15. Materials and devices for quantum information processing in Si/SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sailer, Juergen

    2010-12-15

    In this thesis, we cover and discuss the complete way from material science, the fabrication of two-dimensional electron systems (2DES) in Si/SiGe heterostructures in molecular beam epitaxy (MBE), to quantum effects in few-electron devices based on these samples. We applied and compared two different approaches for the creation of pseudo-substrates that are as smooth, relaxed and defect free as possible. In the 'graded buffer' concept, starting from pure Si, the Ge content of the SiGe alloy is slowly and linearly increased until the desired Ge content is reached. In contrast, in the so-called 'low-temperature Si' concept, the SiGe alloy is deposited directly with the final Ge content, but onto a layer of highly defective Si. In terms of crystal defects, the 'graded buffer' turned out to be superior in comparison to the 'low-temperature Si' concept at the expense of a significantly higher material consumption. By continued optimization of the growth process, aiming at reducing the influence of the impurity, it nevertheless became possible to improve the charge carrier mobility from a mere 2000 cm{sup 2}/(Vs) to a record mobility exceeding 100 000 cm{sup 2}/(Vs). Within this work, we extended our MBE system with an electron beam evaporator for nuclear spin free {sup 28}Si. Together with the already existing effusion cell for {sup 70}Ge we were able to realize first 2DES in a nuclear spin free environment after successfully putting it to operation. The highest mobility 2DES in a nuclear spin free environment which have been realized in this thesis exhibited electron mobilities of up to 55 000 cm{sup 2}/(Vs). Quantum effects in Si/SiGe have been investigated in two- and zero-dimensional nanostructures. A remarkable phenomenon in the regime of the integer quantum Hall effect in Si/SiGe 2DES has been discovered and researched. For applications in quantum information processing and for the creation of qubits it is mandatory to

  16. The Effect of Plasma Spraying on the Microstructure and Aging Kinetics of the Al-Si Matrix Alloy and Al-Si/SiC Composites

    Science.gov (United States)

    Altunpak, Yahya; Akbulut, Hatem; Üstel, Fatih

    2010-02-01

    The Al-Si (LM 13)-based matrix alloy reinforced with SiC particles containing 10, 20, and 30 vol.% SiC particles were spray-formed onto Al-Si substrates. The sprayed samples were directly subjected to a standard aging treatment (T551). From the experiments, it was observed that the high rate of solidification resulted in very fine silicon particles which were observed as continuous islands in the matrix and each island exhibited several very fine silicon crystals. Analysis showed that plasma-spraying caused an increased solid solubility of the silicon in the aluminum matrix. DSC measurements in the permanent mold-cast Al-Si matrix alloy and plasma-sprayed Al-Si matrix alloy showed that plasma-spraying causes an increase in the amount of GP-zone formation owing to the very high rate solidification after plasma-spraying. In the plasma-sprayed Al-Si/SiC composites GP zones were suppressed, since particle-matrix interfaces act as a sink for vacancies during quenching from high plasma process temperature. Introduction of SiC particles to the Al-Si age-hardenable alloy resulted in a decrease in the time required to reach plateau matrix hardness owing to acceleration of aging kinetics by ceramic SiC particles.

  17. Geminal (2)J((29)Si-O-(29)Si) couplings in oligosiloxanes and their relation to direct (1)J((29) Si-(13)C) couplings.

    Science.gov (United States)

    Kurfürst, Milan; Blechta, Vratislav; Schraml, Jan

    2011-08-01

    Absolute values of (79) geminal (2)J((29) Si-O-(29)Si) couplings were measured in an extensive series of (55) unstrained siloxanes dissolved in chloroform-d. Signs of (2)J((29)Si-O-(29)Si) in some (9) silicon hydrides were determined relative to (1)J((29)Si-(1)H) which are known to be negative. It is supposed that positive sign of the (2)J((29)Si-O-(29)Si) coupling found in all studied hydrides is common to all siloxanes. Theoretical calculations for simple model compounds failed to reproduce this sign and so their predictions of bond length and angle dependences cannot be taken as reliable. Useful empirical correlations were found between the (2)J((29)Si-O-(29)Si) couplings on one side and the total number m of oxygen atoms bonded to the silicon atoms, sum of (29)Si chemical shifts or product of (1)J((29)Si-(13)C) couplings on the other side. The significance of these correlations is briefly discussed.

  18. Peculiar magnetism of UAu2Si2

    Science.gov (United States)

    Tabata, Chihiro; Miura, Naoyuki; Uhlířová, Klára; Vališka, Michal; Saito, Hiraku; Hidaka, Hiroyuki; Yanagisawa, Tatsuya; Sechovský, Vladimír; Amitsuka, Hiroshi

    2016-12-01

    Single-crystalline UAu2Si2 has been grown by a floating-zone melting method, and its magnetic, thermal, and transport properties have been investigated through measurements of magnetization, specific heat, and electrical resistivity to reveal its peculiar magnetism. It is shown that UAu2Si2 undergoes a second-order phase transition at Tm = 19 K, which had been believed to be ferromagnetic ordering in the literature, from a paramagnetic phase to an uncompensated antiferromagnetic phase with spontaneous magnetization along the tetragonal c axis (the easy magnetization direction). The magnetic entropy analysis points to the itinerant character of 5 f electrons in the magnetic ordered state of UAu2Si2 with large enhancement of the electronic specific heat coefficient of γ ˜150 mJ/K2mol at 2 K. It also reveals the relatively isotropic crystalline electric field effect of this compound, with contrast to the other relative isostructural compounds. The observed magnetization curves strongly suggest that there is a parasitic ferromagnetic component developing below ˜50 K in high coercivity with the easy axis along the tetragonal c axis. The results are discussed in the context of evolution of magnetism within the entire family of isostructural U T2Si2 compounds.

  19. siRNA for Influenza Therapy

    Science.gov (United States)

    Barik, Sailen

    2010-01-01

    Influenza virus is one of the most prevalent and ancient infections in humans. About a fifth of world’s population is infected by influenza virus annually, leading to high morbidity and mortality, particularly in infants, the elderly and the immunocompromised. In the US alone, influenza outbreaks lead to roughly 30,000 deaths each year. Current vaccines and anti-influenza drugs are of limited use due to high mutation rate of the virus and side effects. In recent years, RNA interference, triggered by synthetic short interfering RNA (siRNA), has rapidly evolved as a potent antiviral regimen. Properly designed siRNAs have been shown to function as potent inhibitors of influenza virus replication. The siRNAs outperform traditional small molecule antivirals in a number of areas, such as ease of design, modest cost, and fast turnaround. Although specificity and tissue delivery remain major bottlenecks in the clinical applications of RNAi in general, intranasal application of siRNA against respiratory viruses including, but not limited to influenza virus, has experienced significant success and optimism, which is reviewed here. PMID:21994689

  20. siRNA for Influenza Therapy

    Directory of Open Access Journals (Sweden)

    Sailen Barik

    2010-07-01

    Full Text Available Influenza virus is one of the most prevalent and ancient infections in humans. About a fifth of world's population is infected by influenza virus annually, leading to high morbidity and mortality, particularly in infants, the elderly and the immunocompromised. In the US alone, influenza outbreaks lead to roughly 30,000 deaths each year. Current vaccines and anti-influenza drugs are of limited use due to high mutation rate of the virus and side effects. In recent years, RNA interference, triggered by synthetic short interfering RNA (siRNA, has rapidly evolved as a potent antiviral regimen. Properly designed siRNAs have been shown to function as potent inhibitors of influenza virus replication. The siRNAs outperform traditional small molecule antivirals in a number of areas, such as ease of design, modest cost, and fast turnaround. Although specificity and tissue delivery remain major bottlenecks in the clinical applications of RNAi in general, intranasal application of siRNA against respiratory viruses including, but not limited to influenza virus, has experienced significant success and optimism, which is reviewed here.

  1. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    CERN Multimedia

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  2. CMOS SiPM with integrated amplifier

    Science.gov (United States)

    Schwinger, Alexander; Brockherde, Werner; Hosticka, Bedrich J.; Vogt, Holger

    2017-02-01

    The integration of silicon photomultiplier (SiPM) and frontend electronics in a suitable optoelectronic CMOS process is a promising approach to increase the versatility of single-photon avalanche diode (SPAD)-based singlephoton detectors. By integrating readout amplifiers, the device output capacitance can be reduced to minimize the waveform tail, which is especially important for large area detectors (>10 × 10mm2). Possible architectures include a single readout amplifier for the whole detector, which reduces the output capacitance to 1:1 pF at minimal reduction in detector active area. On the other hand, including a readout amplifier in every SiPM cell would greatly improve the total output capacitance by minimizing the influence of metal routing parasitic capacitance, but requiring a prohibitive amount of detector area. As tradeoff, the proposed detector features one readout amplifier for each column of the detector matrix to allow for a moderate reduction in output capacitance while allowing the electronics to be placed in the periphery of the active detector area. The presented detector with a total size of 1.7 ♢ 1.0mm2 features 400 cells with a 50 μm pitch, where the signal of each column of 20 SiPM cells is summed in a readout channel. The 20 readout channels are subsequently summed into one output channel, to allow the device to be used as a drop-in replacement for commonly used analog SiPMs.

  3. On the structure of Si(100) surface

    DEFF Research Database (Denmark)

    Back, Seoin; Schmidt, Johan Albrecht; Ji, Hyunjun;

    2013-01-01

    We revisit a dangling theoretical question of whether the surface reconstruction of the Si(100) surface would energetically favor the symmetric or buckled dimers on the intrinsic potential energy surfaces at 0 K. This seemingly simple question is still unanswered definitively since all existing...

  4. SiD Letter of Intent

    CERN Document Server

    Aihara, H; Oreglia, M.; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; Grefe, C.; Klempt, W.; Linssen, L.; Schlatter, D.; Speckmayer, P.; Thom, J.; Yang, J.; Christian, D.C.; Cihangir, S.; Cooper, W.E.; Demarteau, M.; Fisk, H.E.; Garren, L.A.; Krempetz, K.; Kutschke, R.K.; Lipton, R.; Para, A.; Tschirhart, R.; Wenzel, H.; Yarema, R.; Grunewald, M.; Pankov, A.; U., Gomel State Tech.; Dutta, T.; Dauncey, P.D.; Balbuena, J.P.; Fleta, C.; Lozano, M.; Ullan, M.; Christian, G.B.; Faus-Golfe, A.; Fuster, J.; Lacasta, C.; Marinnas, C.; Vos, M.; Duarte, J.; Fernandez, M.; Gonzalez, J.; Jaramillo, R.; Lopez, Virto, A.; Martinez-Eivero, C.; Moya, D.; Ruiz-Mimeno, A.; Vila, I.; Colledani, C.; Dorokhov, A.; Hu-Guo, C.; Winter, M.; Moortgat-Pick, G.; Onoprienko, D.V.; Kim, G.N.; Park, H.; Adloff, C.; Blaha, J.; Blaising, J.-J.; Cap, S.; Chefdeville, M.; Drancourt, C.; Espargiliare, A.; Gaglione, R.; Geffroy, N.; Jacquemier, J.; Karyotakis, Y.; Prast, J.; Vouters, G.; Gronberg, J.; Walston, S.; Wright, D.; Sawyer, L.; Laloum, M.; Ciobanu, C.; Chauveau, J.; Savoy-Navarro, A.; Andricek, L.; Moser, H.-G.; Cowan, R.f.; Fisher, P.; Yamamoto, R.K.; Kenney, ClMl; Boos, E.E.; Merkin, M.; Chen, S.; Chakraborty, D.; Dyshkant, A.; Hedin, D.; Zutshi, V.; Galkin, V.; D'Ascenzo, N.; Ossetski, D.; Saveliev, V.; Kapusta, F.; De Masi, R.; Vrba, V.; Lu, C.; McDonald, K.T.; Smith, A.J.S.; Bortoletto, D.; Coath, R.; Crooks, J.; Damerell, C.; Gibson, M.; Nichols, A.; Stanitzki, M.; Strube, J.; Turchetta, R.; Tyndel, M.; Weber, M.; Worm, S.; Zhang, Z.; Barklow, T.L.; Belymam, A.; Breidenbach, M.; Cassell, R.; Craddock, W.; Deaconu, C.; Dragone, A.; Graf, N.A.; Haller, G.; Herbst, R.; Hewett, J.L.; Jaros, J.A.; Johnson, A.S.; Kim, P.C.; MacFarlane, D.B.; Markiewicz, T.; Maruyama, T.; McCormick, J.; Moffeit, K.; Neal, H.A.; Nelson, T.K.; Oriunno, M.; Partridge, R.; Peskin, M.E.; Rizzo, T.G.; Rowson, P.; Su, D.; Woods, M.; Chakrabarti, S.; Dieguez, A.; Garrido, Ll.; Kaminski, J.; Conway, J.S.; Chertok, M.; Gunion, J.; Holbrook, B.; Lander, R.L.; Tripathi, S.M.; Fadeyev, V.; Schumm, B.A.; Oreglia, M.; Gill, J.; Nauenberg, U.; Oleinik, G.; Wagner, S.R.; Ranjan, K.; Shivpuri, R.; Varner, G.S.; Orava, R.; Van Kooten, R.; Bilki, B.; Charles, M.; Kim, T.J.; Mallik, U.; Norbeck, E.; Onel, Y.; Brau, B.P.; Willocq, S.; Taylor, G.N.; Riles, Keith; Yang, H.-J.; Kriske, R.; Cremaldi, L.; Rahmat, R.; Lastovicka-Medin, G.; Seidel, S.; Hildreth, M.D.; Wayne, M.; Brau, J.E.; Frey, R.; Sinev, N.; Strom, D.M.; Torrence, E.; Banda, Y.; Burrows, P.N.; Devetak, E.; Foster, B.; Lastovicka, T.; Li, Y.-M.; Nomerotski, A.; Riera-Babures, J.; Vilasis-Cardona, X.; Manly, S.; Adeva, B.; Iglesias Escudero, C.; Vazquez Regueiro, P.; Saborido Silva, J.J.; Gallas Torreira, A.; Gao, D.; Jie, W.; Jungfeng, Y.; Li, C.; Liu, S.; Liu, Y.; Sun, Y.; Wang, Q.; Yi, J.; Yonggang, W.; Zhao, Z.; De, K.; Farbin, A.; Park, S.; Smith, J.; White, A.P.; Yu, J.; Lou, X.C.; Abe, T.; Aihara, H.; Iwasaki, M.; Lubatti, H.J.; Band, H.R.; Feyzi, F.; Prepost, R.; Karchin, P.E.; Milstene, C.; Baltay, C.; Dhawan, S.; Kwon, Y.-J.

    2009-01-01

    Letter of intent describing SiD (Silicon Detector) for consideration by the International Linear Collider IDAG panel. This detector concept is founded on the use of silicon detectors for vertexing, tracking, and electromagnetic calorimetry. The detector has been cost-optimized as a general-purpose detector for a 500 GeV electron-positron linear collider.

  5. Si diffusion in GaAs

    Indian Academy of Sciences (India)

    P Murugan; R Pothiraj; S D D Roy; K Ramachandran

    2002-08-01

    Theoretical studies are carried out to ascertain the dominant mechanism of Si diffusion in GaAs. Lattice dynamical model calculations have shown that the most probable diffusion mechanism is through a single vacancy even though several experiments cannot fix the mechanism as substitutional, substitutional–interstitial pair or neutral defect pair.

  6. Si-nanocrystal-based nanofluids for nanothermometry.

    Science.gov (United States)

    Cardona-Castro, M A; Morales-Sánchez, A; Licea-Jiménez, L; Alvarez-Quintana, J

    2016-06-10

    The measurement of local temperature in nanoscale volumes is becoming a technological frontier. Photoluminescent nanoparticles and nanocolloids are the natural choice for nanoscale temperature probes. However, the influence of a surrounding liquid on the cryogenic behavior of oxidized Si-nanocrystals (Si-NCs) has never been investigated. In this work, the photoluminescence (PL) of oxidized Si-NCs/alcohol based nanocolloids is measured as a function of the temperature and the molecule length of monohydric alcohols above their melting-freezing point. The results unveil a progressive blue shift on the emission peak which is dependent on the temperature as well as the dielectric properties of the surrounding liquid. Such an effect is analyzed in terms of thermal changes of the Si-NCs bandgap, quantum confinement and the polarization effects of the embedding medium; revealing an important role of the dielectric constant of the surrounding liquid. These results are relevant because they offer a general insight to the fundamental behavior of photoluminescent nanocolloids under a cooling process and moreover, enabling PL tuning based on the dielectric properties of the surrounding liquid. Hence, the variables required to engineer PL of nanofluids are properly identified for use as temperature sensors at the nanoscale.

  7. SiPM's for particle detection

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Gamal [Stefan Meyer Institute, Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna (Austria); Al-Azhar University, Faculty of Science, Physics Department, 11884, Cairo (Egypt); Buehler, Paul; Marton, Johann; Suzuki, Ken [Stefan Meyer Institute, Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna (Austria)

    2011-07-01

    Particle identification (PID) for hadrons and leptons over a large range of solid angle and momenta is an essential requirement for physics objectives of the PANDA detector. The solenoid in the target spectrometer produces a magnetic field of B{approx}2T necessary for momentum resolution of the tracking detectors. PID in the barrel section of the target, spectrometer has to work in this strong magnetic field within the solenoid, since it is surrounded by an electromagnetic calorimeter, it cannot take too much radial space. Readout of promptly emitted Cherenkov light with SiPM is a promising combination, with advantages like compactness, magnetic field resistance; simple operation and fast timing make SiPM an excellent candidate. The detection of momenta up to several GeV/c can be performed by the Detection of Internally Reflected Cherenkov (DIRC) light. The PANDA detector will feature two DIRC detectors, a DIRC in barrel geometry surrounding the target region, and a disc DIRC in the forward region. SiPM's with a sensitive area of 3mm x 3mm are on the market. We discuss here SiPM's timing performance characteristics and dependence of the operation conditions measurements performed at Stefan Meyer Institute. The single photoelectron time resolution results are also presented.

  8. Universal Converter Using SiC

    Energy Technology Data Exchange (ETDEWEB)

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  9. Si-nanocrystal-based nanofluids for nanothermometry

    Science.gov (United States)

    Cardona-Castro, M. A.; Morales-Sánchez, A.; Licea-Jiménez, L.; Alvarez-Quintana, J.

    2016-06-01

    The measurement of local temperature in nanoscale volumes is becoming a technological frontier. Photoluminescent nanoparticles and nanocolloids are the natural choice for nanoscale temperature probes. However, the influence of a surrounding liquid on the cryogenic behavior of oxidized Si-nanocrystals (Si-NCs) has never been investigated. In this work, the photoluminescence (PL) of oxidized Si-NCs/alcohol based nanocolloids is measured as a function of the temperature and the molecule length of monohydric alcohols above their melting-freezing point. The results unveil a progressive blue shift on the emission peak which is dependent on the temperature as well as the dielectric properties of the surrounding liquid. Such an effect is analyzed in terms of thermal changes of the Si-NCs bandgap, quantum confinement and the polarization effects of the embedding medium; revealing an important role of the dielectric constant of the surrounding liquid. These results are relevant because they offer a general insight to the fundamental behavior of photoluminescent nanocolloids under a cooling process and moreover, enabling PL tuning based on the dielectric properties of the surrounding liquid. Hence, the variables required to engineer PL of nanofluids are properly identified for use as temperature sensors at the nanoscale.

  10. Ordering of vacancies on Si(001)

    NARCIS (Netherlands)

    Zandvliet, H.J.W.

    1997-01-01

    Missing dimer vacancies are always present on the clean Si(001) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (O2, Br2, I2, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (<0.2¿0.3 monolayers) of these vacancy islands is elongate

  11. Passive SiC irradiation temperature monitor

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.

    1996-04-01

    A new, improved passive irradiation temperature monitoring method was examined after an irradiation test at 627{degrees}C. The method is based on the analysis of thermal diffusivity changes during postirradiation annealing of polycrystalline SiC. Based on results from this test, several advantages for using this new method rather than a method based on length or lattice parameter changes are given.

  12. Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Sabina Abdul Hadi

    2013-05-01

    Full Text Available The effect of germanium fraction on the effective minority carrier lifetime (τeff for epitaxial Si1-xGex layers is extracted using measurements on amorphous(a Si(n+/crystalline(c-Si1-xGex(p/crystalline(c-Si(p+ heterojunction solar cells with x = 0.25, 0.41 and 0.56. The τeff extracted for Si0.75Ge0.25 is ∼1 μs, decreasing to ∼ 40 ns for Si0.44Ge0.56. In addition, the band-gap voltage offset (Woc increases from 0.5 eV for Si to 0.65 eV for 56% Ge indicating an increase in non-radiative recombination consistent with the reduction in effective lifetime.

  13. Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

    Directory of Open Access Journals (Sweden)

    Li Zhong

    2013-01-01

    Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

  14. A comparative study of three-terminal Hanle signals in CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jeong-Hyeon; Cho, B. K., E-mail: chobk@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Grünberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); He, Shumin [School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Nanjing University of Posts and Telecommunications, Nanjing 210-003 (China); Grünberg, Peter [Grünberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Nanjing University of Posts and Telecommunications, Nanjing 210-003 (China); Jin, Mi-Jin; Yoo, Jung-Woo [School of Materials Science and Engineering-Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919 (Korea, Republic of)

    2016-01-18

    We performed three-terminal (3T) Hanle measurement for two types of sample series, CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si, with various tunnel resistances. Clear Hanle signal and anomalous scaling between spin resistance-area product and tunnel resistance-area product were observed in CoFe/SiO{sub 2}/n{sup +}-Si devices. In order to explore the origin of the Hanle signal and the impurity-assisted tunneling effect on the Hanle signal in our devices, Hanle measurement in Cu/SiO{sub 2}/n{sup +}-Si devices was performed as well. However, no detectable Hanle signal was observed in Cu/SiO{sub 2}/n{sup +}-Si, even though a lot of samples with various tunnel resistances were studied in wide temperature and bias voltage ranges. Through a comparative study, it is found that the impurity-assisted tunneling magnetoresistance mechanism would not play a dominant role in the 3T Hanle signal in CoFe/SiO{sub 2}/n{sup +}-Si tunnel junctions, where the SiO{sub 2} was formed by plasma oxidation to minimize impurities.

  15. Direct Observations of Correlation between Si-2p Components and Surface States on Si(110)-16 × 2 Single-Domain Surface Using Si-L23VV Auger-Electron and Si-2p Photoelectron Coincidence Measurements

    Science.gov (United States)

    Kakiuchi, Takuhiro; Yoshizaki, Yuya; Kubota, Hiroyuki; Sato, Yuki; Nagaoka, Shin-ichi; Mase, Kazuhiko

    2017-05-01

    A Si(110)-16 × 2 single-domain (SD) surface is investigated in a site-selective way using Si L23VV Auger-electron Si-2p photoelectron coincidence spectroscopy (Si-L23VV-Si-2p APECS) and Si-2p photoelectron Si-L23VV Auger-electron coincidence spectroscopy (Si-2p-Si-L23VV PEACS). The Si(110)-16 × 2 SD consists of five Si-2p surface components (SC1-SC5) and has four semiconducting surface states (S1-S4). The Si-L2VV-Si-2p1/2 APECS spectrum of the Si(110)-16 × 2 SD measured in coincidence with Si-2p1/2 photoelectrons of SC3, SC4, and SC5 shows two small shoulders in the higher Auger electron kinetic energy (AeKE) region. These shoulders suggest Auger processes involving the surface states S1 and S3. The spectral weights of SC3, SC4, and SC5 Si-2p components are greatly enhanced in the Si-2p-Si-L23VV PEACS spectrum measured at Auger electrons with an AeKE of +5.0 eV relative to the Si L23VV peak. On the other hand, the spectral weights of SC1 and SC2 Si-2p components in the Si-2p-Si-L23VV PEACS spectrum show a maximum peak at a relative AeKE of +3 eV. These results directly support the correlations between the five surface components (SC1-SC5) and four surface states (S1-S4) in the adatom-buckling model for the Si(110)-16 × 2 SD proposed by Sakamoto et al. [https://doi.org/10.1103/PhysRevB.79.045304" xlink:type="simple">Phys. Rev. B 79, 045304 (2009)].

  16. Comparison of Fatigue Life Between C/SiC and SiC/SiC Ceramic-Matrix Composites at Room and Elevated Temperatures

    Science.gov (United States)

    Longbiao, Li

    2016-10-01

    In this paper, the comparison of fatigue life between C/SiC and SiC/SiC ceramic-matrix composites (CMCs) at room and elevated temperatures has been investigated. An effective coefficient of the fiber volume fraction along the loading direction (ECFL) was introduced to describe the fiber architecture of preforms. Under cyclic fatigue loading, the fibers broken fraction was determined by combining the interface wear model and fibers statistical failure model at room temperature, and interface/fibers oxidation model, interface wear model and fibers statistical failure model at elevated temperatures in the oxidative environments. When the broken fibers fraction approaches to the critical value, the composites fatigue fracture. The fatigue life S-N curves and fatigue limits of cross-ply, 2D and 3D C/SiC and SiC/SiC composites at room temperature, 550 °C in air, 750 °C in dry and humid condition, 800 °C in air, 1000 °C in argon and air, 1100 °C, 1300 °C and 1500 °C in vacuum, have been predicted. At room temperature, the fatigue limit of 2D C/SiC composite with ECFL of 20 % lies between 0.78 and 0.8 tensile strength; and the fatigue limit of 2D SiC/SiC composite with ECFL of 20 % lies between 0.75 and 0.85 tensile strength. The fatigue limit of 2D C/SiC composite increases to 0.83 tensile strength with ECFL increasing from 20 to 22.5 %, and the fatigue limit of 3D C/SiC composite is 0.85 tensile strength with ECFL of 37 %. The fatigue performance of 2D SiC/SiC composite is better than that of 2D C/SiC composite at elevated temperatures in oxidative environment.

  17. Protection and systemic translocation of siRNA following oral administration of chitosan/siRNA nanoparticles

    DEFF Research Database (Denmark)

    Gonzalez, Borja Ballarin; Dagnæs-Hansen, Frederik; Fenton, Robert A.

    2013-01-01

    , gastrointestinal (GI) deposition, and translocation into peripheral tissue of nonmodified siRNA after oral gavage of chitosan/siRNA nanoparticles in mice. In contrast to naked siRNA, retained structural integrity and deposition in the stomach, proximal and distal small intestine, and colon was observed at 1 and 5...... hours for siRNA within nanoparticles. Furthermore, histological detection of fluorescent siRNA at the apical regions of the intestinal epithelium suggests mucoadhesion provided by chitosan. Detection of intact siRNA in the liver, spleen, and kidney was observed 1 hour after oral gavage, with an organ...

  18. Fabrication of [110]-aligned Si quantum wires embedded in SiO{sub 2} by low-energy oxygen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ishikawa, Yukari E-mail: yukari@jfcc.or.jp, khf06362@niftyserve.or.jp; Shibata, N.; Fukatsu, S

    1999-01-01

    Si quantum wires (QWRs) embedded in SiO{sub 2} are successfully fabricated by low-energy oxygen implantation on a V-groove patterned substrate. Si QWRs aligned to [1 1 0] appeared at the bottom-center of the V-groove. The [1 1 0] cross-section of the Si QWR is a hexagon encompassed by four Si {l_brace}1 1 1{r_brace} and two Si {l_brace}0 0 1{r_brace} lateral facets.

  19. Mutual recombination in slow Si+ + H- collisions

    Institute of Scientific and Technical Information of China (English)

    Wang Jian-Guo; Liu Chun-Lei; Janev R. K.; Yan Jun; Shi Jian-Rong

    2006-01-01

    This paper studies the process of mutual neutralization of Si+ and H- ions in slow collisions within the multichannel Landau-Zener model. All important ionic-covalent couplings in this collision system are included in the collision dynamics. The cross sections for population of specific final states of product Si atom are calculated in the CM energy range 0.05 eV/u-5 keV/u. Both singlet and triplet states are considered. At collision energies below ~10 eV/u, the most populated singlet state is Si(3p4p, 1S0), while for energies above ~150eV/u it is the Si(3p, 4p, 1P1) state. In the case of triplet states, the mixed 3p4p(3 S1 +3P0) states are the most populated in the entire collision energy range investigated. The total cross section exhibits a broad maximum around 200-300 eV/u and for ECM ≤ 10eV/u it monotonically increases with decreasing the collision energy, reaching a value of 8 × 10-13 cm2 at ECM = 0.05 eV/u. The ion-pair formation process in Si(3p2 3PJ)+H(1s) collisions has also been considered and its cross section in the considered energy range is very small (smaller than 10-20 cm2 in the energy region below 1 keV/u).

  20. Atomistic Modelling of Si Nanoparticles Synthesis

    Directory of Open Access Journals (Sweden)

    Giovanni Barcaro

    2017-02-01

    Full Text Available Silicon remains the most important material for electronic technology. Presently, some efforts are focused on the use of Si nanoparticles—not only for saving material, but also for improving the efficiency of optical and electronic devices, for instance, in the case of solar cells coated with a film of Si nanoparticles. The synthesis by a bottom-up approach based on condensation from low temperature plasma is a promising technique for the massive production of such nanoparticles, but the knowledge of the basic processes occurring at the atomistic level is still very limited. In this perspective, numerical simulations can provide fundamental information of the nucleation and growth mechanisms ruling the bottom-up formation of Si nanoclusters. We propose to model the low temperature plasma by classical molecular dynamics by using the reactive force field (ReaxFF proposed by van Duin, which can properly describe bond forming and breaking. In our approach, first-principles quantum calculations are used on a set of small Si clusters in order to collect all the necessary energetic and structural information to optimize the parameters of the reactive force-field for the present application. We describe in detail the procedure used for the determination of the force field and the following molecular dynamics simulations of model systems of Si gas at temperatures in the range 2000–3000 K. The results of the dynamics provide valuable information on nucleation rate, nanoparticle size distribution, and growth rate that are the basic quantities for developing a following mesoscale model.

  1. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  2. Depth Profiling of Melting and Metallization in Si(111) and Si(001) Surfaces

    Science.gov (United States)

    Gunnella, R.; Ali, M.; Abbas, M.; D'Amico, F.; Principi, E.; di Cicco, A.

    2011-10-01

    An original approach for measuring the depth profile of melting and metallization of the Si(111) and Si(001) surfaces is proposed and applied. The different probing depths of the Auger electron and electron energy loss (EELS) spectroscopies are exploited to study the number of molten and metallic layers within 5-30 Å from the surface up to about 1650 K. Melting is limited to 3 atomic layers in Si(001) in the range 1400-1650 K while the number of molten layers grows much faster (5 layers at about 1500 K) in Si(111) as also indicated by the L3-edge shift observed by EELS. The relationship between melting and metallization is briefly discussed.

  3. Growth and characterization of cubic SiC single-crystal films on Si

    Science.gov (United States)

    Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

    1987-01-01

    Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

  4. Optical investigations of AlSi-SiC composites subjected to laser CO 2 annealing

    Science.gov (United States)

    Jaglarz, Janusz; Grabowski, Andrzej

    2010-10-01

    The optical study of the AlSi/SiC composite materials before and after laser annealing has been performed. They concerned total and diffuse reflectance measurements obtained by the means of integrating sphere in the spectral range 250-2500 nm, measurements of intensity of scattered light as a function of scattering angle ( BRDF method) and ellipsometric measurements performed in the range 190-1700 nm. For determination of optical constants, the Kramers-Krönig dispersion relation has been applied. Obtained results had great differences of optical properties alloys before and after laser annealing. For investigated composites roughness and correlation lengths of studied surfaces have been determined. Moreover, optical measurements allowed concluding the light scattering being a result of interaction of light with surface topography and material scattering appeared due to variation of optical constants on surfaces of AlSi/SiC composites.

  5. In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

    Science.gov (United States)

    Saucedo-Mora, L.; Lowe, T.; Zhao, S.; Lee, P. D.; Mummery, P. M.; Marrow, T. J.

    2016-12-01

    SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined.

  6. Incubation time for sub-critical crack propagation in SiC-SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    El-Azab, A.; Ghoniem, N.M. [Univ. of California, Los Angeles, CA (United States)

    1995-04-01

    The objective of this work is to investigate the time for sub-critical crack propagation is SiC-SiC composites at high temperatures. The effects of fiber thermal creep on the relaxation of crack bridging tractions in SiC-SiC ceramic matrix composites (CMCs) is considered in the present work, with the objective of studying the time-to propagation of sub-critical matrix cracks in this material at high temperatures. Under the condition of fiber stress relaxation in the bridiging zone, it is found that the crack opening and the stress intensity factor increase with time for sub-critical matrix cracks. The time elapsed before the stress intensity reaches the critical value for crack propagation is calculated as a function of the initial crack length, applied stress and temperature. Stability domains for matrix cracks are defined, which provide guidelines for conducting high-temperature crack propagation experiments.

  7. Thermal diffusivity measurement for p-Si and Ag/p-Si by photoacoustic technique

    Energy Technology Data Exchange (ETDEWEB)

    Hussein, Mohammed Jabbar; Yunus, W. Mahmood Mat; Kamari, Halimah Mohamed; Zakaria, Azmi, E-mail: mohammed55865@yahoo.com [Department of Physics, Faculty of Science, Universiti PutraMalaysia (UPM), Serdang (Malaysia)

    2015-10-15

    Thermal diffusivity (TD) of p-Si and Ag/p-Si samples were measured by photoacoustic technique using open photoacoustic cell (OPC). The samples were annealed by heating them at 960, 1050, 1200, and 1300 °C for 3 h in air. The thermal diffusivity of Ag-coated samples was obtained by fitting the photoacoustic experimental data to the thermally thick equation for Rosencwaig and Gersho (RG) theory. For the single layer samples, the thermal diffusivity can be obtained by fitting as well as by obtaining the critical frequency f{sub c.} In this study, the thermal diffusivity of the p-Si samples increased with increasing the annealing temperature. The thermal diffusivity of the Ag/p-Si samples, after reaching the maximum value of about 2.73 cm{sup 2}/s at a temperature of 1200 °C, decreased due to the silver complete melt in the surface of the silicon. (author)

  8. Si/SiGe bound-to-continuum quantum cascade terahertz emitters

    Science.gov (United States)

    Paul, D. J.; Matmon, G.; Lever, L.; Ikonić, Z.; Kelsall, R. W.; Chrastina, D.; Isella, G.; von Känel, H.

    2008-04-01

    A review will be presented of recent work on Si/SiGe heavy-hole to heavy-hole quantum cascade emitters showing progress towards a laser using the bound-to-continuum design for the active region. The sample was grown by low energy plasma enhanced chemical vapour deposition in significantly less time than comparable structures and designs in III-V or Si/SiGe technology using molecular beam epitaxy or more standard chemical vapour deposition techniques. Clear intersubband electroluminescence is demonstrated at 4.2 K between 6.7 and 10.1 THz. This is inside the III-V restrahlung band where III-V materials cannot lase, unlike Group IV materials. A review of waveguide losses will also be presented and some ideas of how to design an active region with gain higher than the waveguide losses will be discussed.

  9. A Study on Fretting Wear Property of CVD SiC and Sintered SiC

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Hyun-Jin; Jang, Ki-Nam; An, Ji-Hyeong; Kim, Kyu-Tae [Dongguk University, Gyeongju (Korea, Republic of)

    2015-10-15

    Silicon Carbide is broadly used as high temperature structure material because of its high temperature tolerance and superior mechanical properties. After the Fukushima nuclear power plant accident, SiC proposed as one of the alternative materials for LWR fuel cladding to provide enhanced safety margin. Grid-to-rod fretting wear-induced fuel failure is known to occur due to flow-induced vibration of the reactor core and grid to- rod gap. In this paper, wear tests for CVD SiC plate and sintered SiC tube were performed with two types of spacer grids. Wear test of corroded and non-corroded CVD SiC plates indicate that wear resistance of corroded specimen is lower than one of non-corroded specimen in contrast with zirconium alloy cladding tube. It may be affected by rough surface of corroded specimen caused by grain boundary attack.

  10. Fabrication and characterization of SiO2(f)/Si3N4 composites

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A silicon dioxide fiber-reinforced silicon nitride matrix (SiO2/Si3N4) composite used for radomes was prepared by chemical vapor infiltration (CVI) process using the SiCl4-NH3-H2 system. The effects of the process conditions, including infiltration temperature, infiltration time, and gas flux were investigated. The energy dispersion spectra (EDS) result showed that the main elements of this composite contained Si, N, and O. The X-ray diffraction (XRD) results indicated that phases of the composite before and after treatment at 1350℃ were all amorphous. A little fiber pull-out was observed on the cross section of the composite by scan electron microscope (SEM). As a result, the composite exhibited good thermal stability, but an appropriate interface was necessary between the fiber and the matrix.

  11. Physical studies of strained Si/SiGe heterostructures. From virtual substrates to nanodevices

    Energy Technology Data Exchange (ETDEWEB)

    Minamisawa, Renato Amaral

    2011-10-21

    During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven by the scaling of the device dimensions. The performance improvement has relied mostly in the increase of source velocity with gate scaling, while the transport properties of the channel have remained constant, i.e., those of conventional Si. Starting at the 90 nm node, uniaxial strain has been introduced in the transistor channel in order to further increase the source velocity. Beyond the 32 nm node, novel channel materials, with superior carrier velocities, and novel device architectures are required in order to continue the performance enhancement of MOSFETs while preserving the electrostatic control. In this Thesis, different physical aspects of strained Si and SiGe materials are investigated as a mean to increase carrier velocity in MOSFET channels. Novel approaches for the fabrication of strained Si based on ion implantation and anneal induced relaxation of virtual substrates are developed. The strain relaxation of SiGe layers is improved using a buried thin Si:C layer in the Si(100) substrate. Further, a Si{sup +} ion implantation and annealing method is investigated for relaxing virtual substrates using lower implantation dose. Finally, the uniaxial relaxation of {l_brace}110{r_brace} surface oriented substrates is demonstrated using a He ion implantation and anneal technique. Apart of channel material studies, the fundamental and technological challenges involved in the integration of strained Si and SiGe into MOSFETs are assessed. The impact of source and drain formation on the elastic strain and electrical properties of strained Si layers and nanowires is examined. Also, the formation of ultra-shallow junction in strained Si/strained Si{sub 0.5}Ge{sub 0.5}/SSOI heterostructures is investigated using different types of ion implanted specie and annealing. The results show that BF{sup +}{sub 2} implantation and low temperature annealing are suitable approaches for

  12. Resonant tunnelling in nc-Si/SiO2 multilayers at room temperature

    Institute of Scientific and Technical Information of China (English)

    Chen Deyuan

    2011-01-01

    Nc-Si/SiO2 multilayers were fabricated on silicon wafers in a plasma enhanced chemical vapour deposition system using in situ oxidation technology,followed by three-step thermal treatments.Carrier transportation at room temperature is characterized by current voltage measurement,and negative different conductances can be observed both under forward and negative biases,which is explained by resonant tunnelling.The resonant tunnelling peak voltage is related to the thicknesses of the nc-Si and SiO2 sublayers.And the resonant tunnelling peak voltage under negative bias is larger than that under forward bias.An energy band diagram and an equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.

  13. Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...... class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported...

  14. Vertical charge-carrier transport in Si nanocrystal/SiO2 multilayer structures.

    Science.gov (United States)

    Osinniy, V; Lysgaard, S; Kolkovsky, Vl; Pankratov, V; Nylandsted Larsen, A

    2009-05-13

    Charge-carrier transport in multilayer structures of Si nanocrystals (NCs) embedded in a SiO(2) matrix grown by magnetron sputtering has been investigated. The presence of two types of Si NCs with different diameters after post-growth annealing is concluded from transmission-electron microscopy and photoluminescence measurements. Based on the electric field and temperature dependences of capacitance and resistivity, it is established that the carrier transport is best described by a combination of phonon-assisted and direct tunneling mechanisms. Poole-Frenkel tunneling seems to be a less suitable mechanism to explain the vertical carrier transport due to the very high values of refractive indices obtained within this model. The possibility to more effectively collect charge carriers generated by light in structures having Si NCs of different size is discussed.

  15. Current Status and Recent Research Achievements in SiC/SiC Composites

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai; Snead, Lance L.; Henager, Charles H.; Nozawa, T.; Hinoki, Tetsuya; Ivekovic, Aljaz; Novak, Sasa; Gonzalez de Vicente, Sehila M.

    2014-12-01

    The development and maturation of the silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen the evolution from fundamental development and understanding of the material system and its behavior in a hostile irradiation environment to the current effort which essentially is a broad-based program of technology, directed at moving this material class from a laboratory curiosity to an engineering material. This paper lays out the recent international scientific and technological achievements in the development of SiC/SiC composite material technologies for fusion application and will discuss future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and for general engineering applications.

  16. Current status and recent research achievements in SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Y., E-mail: katohy@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Snead, L.L. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Henager, C.H. [Pacific Northwest National Laboratory, Richland, WA (United States); Nozawa, T. [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan); Hinoki, T. [Institute of Advanced Energy, Kyoto University, Kyoto (Japan); Iveković, A.; Novak, S. [Jožef Stefan Institute, Ljubljana (Slovenia); Gonzalez de Vicente, S.M. [EFDA Close Support Unit, Garching (Germany)

    2014-12-15

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications.

  17. IBA study of SiGe/SiO{sub 2} nanostructured multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Barradas, Nuno P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (ao km 139,7), 2695-066 Bobadela LRS (Portugal); Laboratório de Engenharia Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (ao km 139,7), 2695-066 Bobadela LRS (Portugal); Alves, E. [Associação Euratom/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Vieira, E.M.F. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); Parisini, A. [CNR-IMM Sezione di Bologna, via P. Gobetti 101, 40129 Bologna (Italy); Conde, O. [Physics Department and ICEMS, University of Lisbon, 1749-016 Lisboa (Portugal); Martín-Sánchez, J. [Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid (Spain); Rolo, A.G. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); Chahboun, A. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); FST Tanger, Physics Department, BP 416 Tanger (Morocco); Gomes, M.J.M. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal)

    2014-07-15

    SiGe/SiO{sub 2} multilayers with layer thickness of 5 nm were deposited with RF magnetron sputtering. The as deposited samples had well defined SiGe amorphous layers. Different annealing treatments were made to promote the formation of SiGe nanocrystals. We report an ion beam analysis study with the Rutherford backscattering and elastic recoil analysis detection techniques, in order to determine the thickness and composition of the nanolayers, and gain insight into the evolution of the roughness of the layers. The results are correlated with other structural properties of the samples, as measured with complementary techniques such as grazing incidence X-ray diffraction annular dark field scanning transmission electron microscopy and high resolution transmission electron microscopy.

  18. Si衬底和Si-SiO2-Si柔性衬底上的GaN生长%GaN Growth on Si and Si-SiO2-Si Compliant Substrates

    Institute of Scientific and Technical Information of China (English)

    王军喜; 王晓亮; 刘宏新; 胡国新; 李建平; 李晋闽; 曾一平

    2004-01-01

    使用MBE方法在Si(111)衬底和Si-SiO2-Si柔性衬底上生长了GaN外延层,并对在两种衬底上生长的样品进行了对比分析.在柔性衬底上获得了无裂纹的外延层,其表面粗糙度为0.6nm.研究了GaN外延层中的应力及其光学性质,光致发光测试结果表明柔性衬底上生长的外延层中应力和杂质浓度明显低于直接生长在Si衬底上的样品的值.研究结果显示了所用柔性衬底有助于改善GaN外延膜的质量.

  19. Design of a creep experiment for SiC/SiC composites in HFIR

    Energy Technology Data Exchange (ETDEWEB)

    Hecht, S.L.; Hamilton, M.L.; Jones, R.H. [and others

    1997-08-01

    A new specimen was designed for performing in-reactor creep tests on composite materials, specifically on SiC/SiC composites. The design was tailored for irradiation at 800{degrees}C in a HFIR RB position. The specimen comprises a composite cylinder loaded by a pressurized internal bladder that is made of Nb1Zr. The experiment was designed for approximately a one year irradiation.

  20. Waveguide design for mid- and far-infrared p-Si/SiGe quantum cascade lasers

    Science.gov (United States)

    Ikonic, Z.; Kelsall, R. W.; Harrison, P.

    2004-01-01

    Design considerations are presented for waveguides to be used in p-Si/SiGe based quantum cascade lasers operating in the mid- and far-infrared wavelength ranges. Modal losses and confinement factors are calculated for both TM and TE modes in conventional double metal clad structures, metal-highly doped semiconductor layer structures and also in novel metal-metal silicide structures. Guidelines for choosing the confinement and contact layer parameters are given.