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Sample records for functionalized semiconductor quantum

  1. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  2. Semiconductor nanocrystals or quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 18; Issue 8. Various Quantum Mechanical Concepts for Confinements in Semiconductor Nanocrystals. Jayakrishna Khatei Karuna Kar Nanda. Classroom Volume 18 Issue 8 August 2013 pp 771-776 ...

  3. Quantum correlations in semiconductor microcavities

    Science.gov (United States)

    Kira, M.; Hoyer, W.; Koch, S. W.; Brick, P.; Ell, C.; Hübner, M.; Khitrova, G.; Gibbs, H. M.

    2003-10-01

    The quantum mechanical nature of the light field in semiconductor microcavities leads to non-classical coupling effects between photons and electron-hole excitations. It is shown that these quantum correlations give rise to characteristic corrections of the semiclassical light-matter coupling dynamics. Examples of quantum correlation signatures include entanglement effects in the probe reflection of a microcavity system and squeezing in the incoherent emission.

  4. Quantum Optical Effects in Semiconductors

    Science.gov (United States)

    Hoyer, W.; Kira, M.; Koch, S. W.

    Quantum optical effects in semiconductors are studied using a density-matrix approach which takes into account the many-body Coulomb interaction among the charge carriers, coupling to lattice vibrations, and the quantum nature of light. The theory provides a consistent set of equations which is used to compute photoluminescence spectra, predict the emission of squeezed light, investigate correlations between photons emitted by quantum-well structures, and to show examples where light-matter entanglement influences experiments done with classical optical fields.

  5. Quantum Confined Semiconductors

    Science.gov (United States)

    2015-02-01

    RCR    , (5) which considers all elastic scattering events on the energy shell kk EEE   , which is appropriate for all scattering...fluctuations in semiconductor superlattices using a magneto -transport technique,” Superlattices and Microstructures 15, 225-228 (1994). 12. I. Dharssi and...εyy is consistently slightly tensile (≈ -1%), which agreed with theoretical calculations of εyy based on published values of elastic constants. An

  6. Epitaxial semiconductor quantum wires.

    Science.gov (United States)

    Wu, J; Chen, Y H; Wang, Z G

    2008-07-01

    The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.

  7. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  8. Quantum transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, Tillmann Christoph

    2009-11-15

    The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function method (NEGF) is a very general and all-inclusive scheme for the description of exactly this kind of transport problem. Although the NEGF formalism has been derived in the 1960's, textbooks about this formalism are still rare to find. Therefore, we introduce the NEGF formalism, its fundamental equations and approximations in the first part of this thesis. Thereby, we extract ideas of several seminal contributions on NEGF in literature and augment this by some minor derivations that are hard to find. Although the NEGF method has often been numerically implemented on transport problems, all current work in literature is based on a significant number of approximations with often unknown influence on the results and unknown validity limits. Therefore, we avoid most of the common approximations and implement in the second part of this thesis the NEGF formalism as exact as numerically feasible. For this purpose, we derive several new scattering self-energies and introduce new self-adaptive discretizations for the Green's functions and self-energies. The most important improvements of our NEGF implementation, however, affect the momentum and energy conservation during incoherent scattering, the Pauli blocking, the current conservation within and beyond the device and the reflectionless propagation through open device boundaries. Our uncommonly accurate implementation of the NEGF method allows us to analyze and assess most of the common approximations and to unveil numerical artifacts that have plagued previous approximate implementations in literature. Furthermore, we apply our numerical implementation of the NEGF method on the stationary electron transport in THz quantum cascade lasers (QCLs) and answer

  9. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  10. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    Lin Wen

    2017-07-01

    Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  11. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

    Science.gov (United States)

    Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

    2017-07-28

    Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  12. Voltage-controlled quantum light from an atomically thin semiconductor

    Science.gov (United States)

    Chakraborty, Chitraleema; Kinnischtzke, Laura; Goodfellow, Kenneth M.; Beams, Ryan; Vamivakas, A. Nick

    2015-06-01

    Although semiconductor defects can often be detrimental to device performance, they are also responsible for the breadth of functionality exhibited by modern optoelectronic devices. Artificially engineered defects (so-called quantum dots) or naturally occurring defects in solids are currently being investigated for applications ranging from quantum information science and optoelectronics to high-resolution metrology. In parallel, the quantum confinement exhibited by atomically thin materials (semi-metals, semiconductors and insulators) has ushered in an era of flatland optoelectronics whose full potential is still being articulated. In this Letter we demonstrate the possibility of leveraging the atomically thin semiconductor tungsten diselenide (WSe2) as a host for quantum dot-like defects. We report that this previously unexplored solid-state quantum emitter in WSe2 generates single photons with emission properties that can be controlled via the application of external d.c. electric and magnetic fields. These new optically active quantum dots exhibit excited-state lifetimes on the order of 1 ns and remarkably large excitonic g-factors of 10. It is anticipated that WSe2 quantum dots will provide a novel platform for integrated solid-state quantum photonics and quantum information processing, as well as a rich condensed-matter physics playground with which to explore the coupling of quantum dots and atomically thin semiconductors.

  13. Electron Spins in Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Hanson, R.

    2005-01-01

    This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic

  14. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 26; Issue 1. Many electron effects in ... Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, ... Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of ...

  15. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  16. Superconducting detectors for semiconductor quantum photonics

    International Nuclear Information System (INIS)

    Reithmaier, Guenther M.

    2015-01-01

    In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

  17. Electron Spin Dynamics in Semiconductor Quantum Dots

    International Nuclear Information System (INIS)

    Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.

    2011-01-01

    An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.

  18. Biosensing with Luminescent Semiconductor Quantum Dots

    OpenAIRE

    Sapsford, Kim E.; Pons, Thomas; Medintz, Igor L.; Mattoussi, Hedi

    2006-01-01

    Luminescent semiconductor nanocrystals or quantum dots (QDs) are a recently developed class of nanomaterial whose unique photophysical properties are helping to create a new generation of robust fluorescent biosensors. QD properties of interest for biosensing include high quantum yields, broad absorption spectra coupled to narrow size-tunable photoluminescent emissions and exceptional resistance to both photobleaching and chemical degradation. In this review, we examine the progress in adapti...

  19. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the ...

  20. Competing interactions in semiconductor quantum dots

    NARCIS (Netherlands)

    van den Berg, R.; Brandino, G.P.; El Araby, O.; Konik, R.M.; Gritsev, V.; Caux, J.S.

    2014-01-01

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free-induction decay and spin-echo simulations

  1. Quantum Thermal Transport in Semiconductor Nanostructures

    Science.gov (United States)

    Miao, Kai

    Modern semiconductor devices scale down to the nanometer range. Heat dissipation becomes a critical issue in the chip design. From a different perspective, energy conservation has attracted much of attention from researchers. The essence of heat dissipation and energy conservation is the heat transport. Thermal properties of semiconductors have been under intense investigation in recent decades. Classical models fail to consider the quantum effects in devices on the scale of nanometers. First-principle methods only can deal with small devices and is computationally intensive. Instead, a modified valence force field (VFF) model is applied to reproduce the phonon properties of different materials and devices. Phonon transport is explored using the Green's functions. The concept of a Buttiker probe model is first used to mimic the scattering mechanisms in phonon transport. This energy conservation model is straightforward and efficient in describing scattering. In the quasiparticle approximation, phonon scattering will cause a phonon energy shift. This energy shift is represented by the scattering self-energy in a retarded Green's function. Phonon lifetime is extracted from the scattering self-energy expression. Different relaxation time approximation (RTA) models are studied and coupled with the phonon Green's function method for the first time. We prove that the widely used and proven RTA models in the Boltzmann transport equation (BTE) survive in the atomistic Green's function method. This method can give accurate thermal properties agreeing closely with the experimental results for bulk devices. This atomistic method can also consider quantum confinement effects at the nanoscale. The heat transport across a Si/Ge interface is introduced in this work as an example for this application. The heat transfer across metal/semiconductor (MS) interfaces is investigated as well. Relaxation at the interface can be done in two different ways. Using VFF model to relax the

  2. Quantum theory of the optical and electronic properties of semiconductors

    CERN Document Server

    Haug, Hartmut

    2009-01-01

    This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

  3. Introductory quantum mechanics for semiconductor nanotechnology

    International Nuclear Information System (INIS)

    Kim, Dae Mann

    2010-01-01

    The result of the nano education project run by the Korean Nano Technology Initiative, this has been recommended for use as official textbook by the Korean Nanotechnology Research Society. The author is highly experienced in teaching both physics and engineering in academia and industry, and naturally adopts an interdisciplinary approach here. He is short on formulations but long on applications, allowing students to understand the essential workings of quantum mechanics without spending too much time covering the wide realms of physics. He takes care to provide sufficient technical background and motivation for students to pursue further studies of advanced quantum mechanics and stresses the importance of translating quantum insights into useful and tangible innovations and inventions. As such, this is the only work to cover semiconductor nanotechnology from the perspective of introductory quantum mechanics, with applications including mainstream semiconductor technologies as well as (nano)devices, ranging from photodetectors, laser diodes, and solar cells to transistors and Schottky contacts. Problems are also provided to test the reader's understanding and supplementary material available includes working presentation files, solutions and instructors manuals. (orig.)

  4. Guiding effect of quantum wells in semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

    2013-05-31

    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  5. Quantum theory of spontaneous emission and coherent effects in semiconductor microstructures

    Science.gov (United States)

    Kira, M.; Jahnke, F.; Hoyer, W.; Koch, S. W.

    1999-11-01

    A fully quantum-mechanical theory for the interaction of light and electron-hole excitations in semiconductor quantum-well systems is developed. The resulting many-body hierarchy for the correlation functions is truncated using a dynamical decoupling scheme leading to coupled semiconductor luminescence and Bloch equations. For incoherent excitation conditions, the theory is used to describe nonlinear excitonic emission properties of single-quantum wells, optically coupled multiple quantum-well systems, and quantum wells in a microcavity. Resonant coherent optical excitation leads to a direct coupling between the induced coherent polarization and photoluminescence. The resulting quantum corrections to the semiclassical semiconductor Bloch equations and the coherent contributions to the semiconductor luminescence equations are discussed. The secondary emission in directions deviating from the coherent excitation direction after femtosecond-pulse excitation is studied. Coherent control and quadrature squeezing for the light emission are analyzed.

  6. Quantum Confined Semiconductors for High Efficiency Photovoltaics

    Science.gov (United States)

    Beard, Matthew

    2014-03-01

    Semiconductor nanostructures, where at least one dimension is small enough to produce quantum confinement effects, provide new pathways for controlling energy flow and therefore have the potential to increase the efficiency of the primary photon-to-free energy conversion step. In this discussion, I will present the current status of research efforts towards utilizing the unique properties of colloidal quantum dots (NCs confined in three dimensions) in prototype solar cells and demonstrate that these unique systems have the potential to bypass the Shockley-Queisser single-junction limit for solar photon conversion. The solar cells are constructed using a low temperature solution based deposition of PbS or PbSe QDs as the absorber layer. Different chemical treatments of the QD layer are employed in order to obtain good electrical communication while maintaining the quantum-confined properties of the QDs. We have characterized the transport and carrier dynamics using a transient absorption, time-resolved THz, and temperature-dependent photoluminescence. I will discuss the interplay between carrier generation, recombination, and mobility within the QD layers. A unique aspect of our devices is that the QDs exhibit multiple exciton generation with an efficiency that is ~ 2 to 3 times greater than the parental bulk semiconductor.

  7. The Quantum Hydrodynamic Model for Semiconductor Devices: Theory and Computations

    National Research Council Canada - National Science Library

    Gardner, Carl

    1998-01-01

    .... This "smooth" quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices...

  8. Semiconductor quantum optics with tailored photonic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Laucht, Arne

    2011-06-15

    This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings ({delta}E<{proportional_to}5 meV) and a multi-exciton-based, Auger-like process for larger detunings ({delta}E >{proportional_to}5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of

  9. Semiconductor quantum optics with tailored photonic nanostructures

    International Nuclear Information System (INIS)

    Laucht, Arne

    2011-01-01

    This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings (ΔE ∝5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of single photon emission into the waveguide. The results obtained during the course of this thesis contribute significantly to

  10. Universal quantum computation in a semiconductor quantum wire network

    International Nuclear Information System (INIS)

    Sau, Jay D.; Das Sarma, S.; Tewari, Sumanta

    2010-01-01

    Universal quantum computation (UQC) using Majorana fermions on a two-dimensional topological superconducting (TS) medium remains an outstanding open problem. This is because the quantum gate set that can be generated by braiding of the Majorana fermions does not include any two-qubit gate and also no single-qubit π/8 phase gate. In principle, it is possible to create these crucial extra gates using quantum interference of Majorana fermion currents. However, it is not clear if the motion of the various order parameter defects (vortices, domain walls, etc.), to which the Majorana fermions are bound in a TS medium, can be quantum coherent. We show that these obstacles can be overcome using a semiconductor quantum wire network in the vicinity of an s-wave superconductor, by constructing topologically protected two-qubit gates and any arbitrary single-qubit phase gate in a topologically unprotected manner, which can be error corrected using magic-state distillation. Thus our strategy, using a judicious combination of topologically protected and unprotected gate operations, realizes UQC on a quantum wire network with a remarkably high error threshold of 0.14 as compared to 10 -3 to 10 -4 in ordinary unprotected quantum computation.

  11. Biosensing with Luminescent Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Hedi Mattoussi

    2006-08-01

    Full Text Available Luminescent semiconductor nanocrystals or quantum dots (QDs are a recentlydeveloped class of nanomaterial whose unique photophysical properties are helping tocreate a new generation of robust fluorescent biosensors. QD properties of interest forbiosensing include high quantum yields, broad absorption spectra coupled to narrow sizetunablephotoluminescent emissions and exceptional resistance to both photobleaching andchemical degradation. In this review, we examine the progress in adapting QDs for severalpredominantly in vitro biosensing applications including use in immunoassays, asgeneralized probes, in nucleic acid detection and fluorescence resonance energy transfer(FRET - based sensing. We also describe several important considerations when workingwith QDs mainly centered on the choice of material(s and appropriate strategies forattaching biomolecules to the QDs.

  12. Electron transport and coherence in semiconductor quantum dots and rings

    NARCIS (Netherlands)

    Van der Wiel, W.G.

    2002-01-01

    A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

  13. Carrier-phonon interaction in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Seebeck, Jan

    2009-03-10

    In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non

  14. The electronic properties of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Barker, J.A.

    2000-10-01

    This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

  15. Semiconductor Nanomembranes for Quantum Photonics: Quantum Light Sources and Optomechanics

    DEFF Research Database (Denmark)

    Liu, Jin

    This thesis describes the fabrication and characterizations of semiconductor nanomembranes, i.e., gallium arsenide (GaAs) photonic crystal (PC) and optomechanical nanomemebranes. Processing techniques are developed and optimized in order to fabricate PC membranes for quantum light sources......-record mechanical Q-factor up to 1 million have been fabricated with two step selective wet etches. These optomechanical naonmembranes exhibit superb performances in cavity optomechanical cooling experiments in which a mechanical mode has been cooled from room temperature to 4 K. The interaction between single...... quantum dots (QDs) and PC cavities has been modeled in the framework of Jaynes-Cummings model (JCM) with the focus on single artificial atom lasers. In the experiments, a highly efficient single photon source with a collection efficiency up to 38% has been achieved and detailed measurements suggest...

  16. Specific heat in diluted magnetic semiconductor quantum ring

    Science.gov (United States)

    Babanlı, A. M.; Ibragimov, B. G.

    2017-11-01

    In the present paper, we have calculated the specific heat and magnetization of a quantum ring of a diluted magnetic semiconductor (DMS) material in the presence of magnetic field. We take into account the effect of Rashba spin-orbital interaction, the exchange interaction and the Zeeman term on the specific heat. We have calculated the energy spectrum of the electrons in diluted magnetic semiconductor quantum ring. Moreover we have calculated the specific heat dependency on the magnetic field and Mn concentration at finite temperature of a diluted magnetic semiconductor quantum ring.

  17. Optical properties of semiconductors quantum microcavity structures

    International Nuclear Information System (INIS)

    Afshar, A.M.

    1996-12-01

    The principal phenomenon investigated in this thesis is vacuum Rabi coupling in semiconductor microcavity structures. In these structures quantum well excitons are embedded in a Fabry - Perot like cavity, defined by two semiconductor dielectric mirrors. In such a system the coupled exciton and cavity photon mode form a mixed - mode polariton, where on - resonance there are two branches, each having 50% exciton and 50% photon character. The separation between the upper and lower branches is a measure of the coupling strength where the strength is dependent on the exciton oscillator strength. This interaction is known as vacuum Rabi coupling, and clear anticrossing is seen when the exciton is tuned through the cavity. In our reflectivity experiments we demonstrate control of the coupling between the cavity mode and the exciton by varying temperature, applied electric or magnetic field. Modelling of the reflectivity spectra and the tuning was done using a Transfer Matrix Reflectivity (TMR) model or a linear dispersion model, where in both cases the excitons are treated as Lorentz oscillators. Temperature tuning is achieved because exciton energy decreases with temperature at a much faster rate than the cavity mode. We have demonstrated vacuum Rabi coupling of the cavity mode with both the heavy - hole and light - hole excitons. Electric field tuning is achieved via the quantum confined Stark effect which decreases the exciton energy with increasing field, whilst at the same time the cavity mode energy remains constant. A study of how the electric field reduction of exciton oscillator strength reduces the vacuum Rabi coupling strength is performed. We report the first observation in a semiconductor structure of motional narrowing, seen in both electric field and in temperature tuning experiments at high magnetic field. In magnetic field studies we show how magnetic field induced increase in exciton oscillator strength affects the vacuum Rabi coupling. We also show by

  18. Activation of molecular catalysts using semiconductor quantum dots

    Science.gov (United States)

    Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM

    2011-10-04

    Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

  19. Electronic states of semiconductor-metal-semiconductor quantum-well structures

    Science.gov (United States)

    Huberman, M. L.; Maserjian, J.

    1988-01-01

    Quantum-size effects are calculated in thin layered semiconductor-metal-semiconductor structures using an ideal free-electron model for the metal layer. The results suggest new quantum-well structures having device applications. Structures with sufficiently high-quality interfaces should exhibit effects such as negative differential resistance due to tunneling between allowed states. Similarly, optical detection by intersubband absorption may be possible. Ultrathin metal layers are predicted to behave as high-density dopant sheets.

  20. Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

    Energy Technology Data Exchange (ETDEWEB)

    Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

    2016-05-03

    This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

  1. Exciton absorption of entangled photons in semiconductor quantum wells

    Science.gov (United States)

    Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team

    2013-03-01

    The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes

  2. Microwave mediated synthesis of semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Afrasiabi, Roodabeh; Sugunan, Abhilash; Shahid, Robina; Toprak, Muhammet S.; Muhammed, Mamoun [Division of Functional Materials, Royal Institute of Technology (KTH), Stockholm (Sweden)

    2012-07-15

    Colloidal quantum dots (QD) have tuneable optoelectronic properties and can be easily handled by simple solution processing techniques, making them very attractive for a wide range of applications. Over the past decade synthesis of morphology controlled high quality (crystalline, monodisperse) colloidal QDs by thermal decomposition of organometallic precursors has matured and is well studied. Recently, synthesis of colloidal QDs by microwave irradiation as heating source is being studied due to the inherently different mechanisms of heat transfer, when compared to solvent convection based heating. Under microwave irradiation, polar precursor molecules directly absorb the microwave energy and heat up more efficiently. Here we report synthesis of colloidal II-VI semiconductor QDs (CdS, CdSe, CdTe) by microwave irradiation and compare it with conventional synthesis based on convection heating. Our findings show that QD synthesis by microwave heating is more efficient and the chalcogenide precursor strongly absorbs the microwave radiation shortening the reaction time and giving a high reaction yield (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

    2009-01-01

    The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

  4. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter

    2015-01-01

    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  5. Gain dynamics and saturation in semiconductor quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher

    2004-01-01

    Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

  6. Quantum statistical theory of semiconductor junctions in thermal equilibrium

    Science.gov (United States)

    Von Roos, O.

    1977-01-01

    Free carrier and electric field distributions of one-dimensional semiconductor junctions are evaluated using a quantum mechanical phase-space distribution and its corresponding Boltzmann equation. Attention is given to quantum and exchange corrections in cases of high doping concentrations when carrier densities become degenerate. Quantitative differences between degenerate and classical junction characteristics, e.g., maximum electric field and built-in voltage and carrier concentration within the transition region, are evaluated numerically.

  7. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  8. Self-slowdown and -advancement of fs pulses in a quantum-dot semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Poel, Mike van der; Mørk, Jesper; Hvam, Jørn Märcher

    2005-01-01

    We demonstrate changes in the propagation time of 180 femtosecond pulses in a quantum-dot semiconductor optical amplifier as function of pulse input power and bias current. The results interpreted as a result of pulse reshaping by gain saturation but are also analogous to coherent population osci...

  9. Spin Splitting in Different Semiconductor Quantum Wells

    International Nuclear Information System (INIS)

    Hao Yafei

    2012-01-01

    We theoretically investigate the spin splitting in four undoped asymmetric quantum wells in the absence of external electric field and magnetic field. The quantum well geometry dependence of spin splitting is studied with the Rashba and the Dresselhaus spin-orbit coupling included. The results show that the structure of quantum well plays an important role in spin splitting. The Rashba and the Dresselhaus spin splitting in four asymmetric quantum wells are quite different. The origin of the distinction is discussed in this work. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Semiconductor quantum dot amplifiers for optical signal processing

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Uskov, A. V.; Bischoff, Svend

    2001-01-01

    The dynamics of quantum dot semiconductor amplifiers are investigated theoretically with respect to the potential for ultrafast signal processing. The high-speed signal processing capacity of these devices is found to be limited by the wetting layer dynamics in case of electrical pumping, while...... optical pumping partly removes this limitation. Also, the possibility of using spectral hole burning for signal processing is discussed....

  11. Ultrafast Dynamics of Quantum-Dot Semiconductor Optical Amplifiers

    DEFF Research Database (Denmark)

    Poel, Mike van der; Hvam, Jørn Märcher

    2007-01-01

    We report on a series of experiments on the dynamical properties of quantum-dot semiconductor optical amplifiers. We show how the amplifier responds to one or several ultrafast (170 fs) pulses in rapid succession and our results demonstrate applicability and ultimate limitations to application...

  12. Opto-electronic and quantum transport properties of semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sabathil, M.

    2005-01-01

    In this work a novel and efficient method for the calculation of the ballistic transport properties of open semiconductor nanostructures connected to external reservoirs is presented. It is based on the Green's function formalism and reduces the effort to obtain the transmission and the carrier density to a single solution of a hermitian eigenvalue problem with dimensions proportional to the size of the decoupled device and the multiple inversion of a small matrix with dimensions proportional to the size of the contacts to the leads. Using this method, the 4-band GaAs hole transport through a 2-dimensional three-terminal T-junction device, and the resonant tunneling current through a 3-dimensional InAs quantum dot molecule embedded into an InP heterostructure have been calculated. The further extension of the method into a charge self-consistent scheme enables the efficient prediction of the IV-characteristics of highly doped nanoscale field effect transistors in the ballistic regime, including the influence of quasi bound states and the exchange-correlation interaction. Buettiker probes are used to emulate the effect of inelastic scattering on the current for simple 1D devices, systematically analyzing the dependence of the density of states and the resulting self-consistent potential on the scattering strength. The second major topic of this work is the modeling of the optical response of quantum confined neutral and charged excitons in single and coupled self-assembled InGaAs quantum dots. For this purpose the existing device simulator nextnano{sup 3} has been extended to incorporate particle-particle interactions within the means of density functional theory in local density approximation. In this way the exciton transition energies for neutral and charged excitons as a function of an externally applied electric field have been calculated, revealing a systematic reduction of the intrinsic dipole with the addition of extra holes to the exciton, a finding

  13. Magnetospatial dispersion of semiconductor quantum wells

    Science.gov (United States)

    Kotova, L. V.; Kats, V. N.; Platonov, A. V.; Kochereshko, V. P.; André, R.; Golub, L. E.

    2018-03-01

    Polarization conversion of light reflected from quantum wells governed by both magnetic field and light propagation direction is observed. We demonstrate that the polarization conversion is caused by the magnetospatial dispersion in quantum wells which manifests itself in the reflection coefficient contribution bilinear in the in-plane components of the magnetic field and the light wave vector. The magnetospatial dispersion is shown to arise due to structure inversion asymmetry of the quantum wells. The effect is resonantly enhanced in the vicinity of the heavy-hole exciton. We show that microscopically the magnetospatial dispersion is caused by the mixing of heavy- and light-hole states in the quantum well due to both orbital effect of the magnetic field and the in-plane hole motion. The degree of the structure inversion asymmetry is determined for GaAs/AlGaAs and CdTe quantum wells.

  14. A quantum energy transport model for semiconductor device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Sho, Shohiro, E-mail: shoshohiro@gmail.com [Graduate School of Information Science and Technology, Osaka University, Osaka (Japan); Odanaka, Shinji [Computer Assisted Science Division, Cybermedia Center, Osaka University, Osaka (Japan)

    2013-02-15

    This paper describes numerical methods for a quantum energy transport (QET) model in semiconductors, which is derived by using a diffusion scaling in the quantum hydrodynamic (QHD) model. We newly drive a four-moments QET model similar with a classical ET model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing numerical schemes and an iterative solution method with a relaxation method. Numerical simulations of electron transport in a scaled MOSFET device are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.

  15. Quantum computation in semiconductor quantum dots of electron-spin asymmetric anisotropic exchange

    International Nuclear Information System (INIS)

    Hao Xiang; Zhu Shiqun

    2007-01-01

    The universal quantum computation is obtained when there exists asymmetric anisotropic exchange between electron spins in coupled semiconductor quantum dots. The asymmetric Heisenberg model can be transformed into the isotropic model through the control of two local unitary rotations for the realization of essential quantum gates. The rotations on each qubit are symmetrical and depend on the strength and orientation of asymmetric exchange. The implementation of the axially symmetric local magnetic fields can assist the construction of quantum logic gates in anisotropic coupled quantum dots. This proposal can efficiently use each physical electron spin as a logical qubit in the universal quantum computation

  16. Tunnelling and relaxation in semiconductor double quantum wells

    International Nuclear Information System (INIS)

    Ferreira, R.; Bastard, G.

    1997-01-01

    Double quantum wells are among the simplest semiconductor heterostructures exhibiting tunnel coupling. The existence of a quantum confinement effect for the energy levels of a narrow single quantum well has been largely studied. In double quantum wells, in addition to these confinement effects which characterize the levels of the isolated wells, one faces the problem of describing the eigenstates of systems interacting weakly through a potential barrier. In addition, the actual structures differ from the ideal systems studied in the quantum mechanics textbooks in many aspects. The presence of defects leads, for instance, to an irreversible time evolution for a population of photocreated carriers. This irreversible transfer is now clearly established experimentally. The resonant behaviour of the transfer has also been evidenced, from the study of biased structures. If the existence of an interwell transfer is now clearly established from the experimental point of view, its theoretical description, however, is not fully satisfactory. This review focuses on the theoretical description of the energy levels and of the interwell assisted transfer in double quantum wells. We shall firstly outline the problem of tunnel coupling in semiconductor heterostructures and then discuss the single particle and exciton eigenstates in double quantum wells. In the remaining part of the review we shall present and critically review a few theoretical models used to describe the assisted interwell transfer in these structures. (author)

  17. Pulse train amplification and regeneration based on semiconductor quantum dots waveguide

    DEFF Research Database (Denmark)

    Chen, Yaohui; Öhman, Filip; Mørk, Jesper

    2008-01-01

    We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides.......We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides....

  18. Physical models of semiconductor quantum devices

    CERN Document Server

    Fu, Ying

    2013-01-01

    The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.

  19. Magnetoexcitons in type-II semiconductor quantum dots

    Science.gov (United States)

    Fuster, Gonzalo; Barticevic, Zdenka; Pacheco, Monica; Oliveira, Luiz E.

    2004-03-01

    We present a theoretical investigation of excitons in type-II semiconductor quantum dots (QD). In these systems the confinement of electrons inside the QD and the hole outside the QD produces a ring-like structure [1-2]. Recently, Ribeiro et al [3], in a magnetophotoluminescence study of type-II InP/GaAs self-assembled quantum dots, observed Aharonov-Bohm-type oscillations characteristic of the ring topology for neutral excitons. Using a simple model they have derived the groundstate hole energy as a function of the magnetic field, and obtained values for the ring parameters which are in good agreement with the measured values. However, some of the features observed experimentally, in the photoluminescence intensity, can not be well explained under that approach. In this work we present a more realistic model which considers the finite width of the ring and the electron-hole interaction included via a perturbative approach. The calculations are performed within the oneparticle formalism using the effective mass approximation. The confinement potential for electrons is modelled as the superposition of a quantum well potential along the axial direction, and a parabolic lateral confinement potential. The energies for the hole in the ring plane are calculated using the method of reference [4]. Theoretical calculations are in good agreement with the experimental results of reference [3] provided that excitonic effects are properly taken into account. References 1. A.O. Govorov et al., Physica E 13 , 297 (2002). 2. K. L. Janssens et al. Phys. Rev B64, 155324 (2001), and Phys. Rev. B66, 075314 (2002). 3. E. Ribeiro, G. Medeiros-Ribeiro, and W.Carvalho Jr., and A.O. Govorov, condmat/0304092 (2003). 4. Z. Barticevic, G. Fuster, and M. Pacheco,Phys. Rev. B 65, 193307 (2002).

  20. Second-harmonic imaging of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld

    2000-01-01

    Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...... observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations. Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics....

  1. Band structures of graphene hexagonal lattice semiconductor quantum dots

    Science.gov (United States)

    Peng, Juan; Li, Shu-Shen

    2010-12-01

    Electronic structures of coupled semiconductor quantum dots (QDs) arranged as graphene hexagonal lattice are studied theoretically using the tight-binding method. In our calculations, the electrons can hop to the third-nearest-neighbors, and the overlap matrix as well as the multicenter integral are taken into account. The novel two-dimensional Dirac-like electronic excitations in graphene are found in these artificial planar QD structures. The results provide the theoretical basis for searching Dirac fermions in QD materials and have great significance for investigating and making semiconductor QD devices.

  2. Full quantum treatment of charge dynamics in amorphous molecular semiconductors

    Science.gov (United States)

    de Vries, Xander; Friederich, Pascal; Wenzel, Wolfgang; Coehoorn, Reinder; Bobbert, Peter A.

    2018-02-01

    We present a treatment of charge dynamics in amorphous molecular semiconductors that accounts for the coupling of charges to all intramolecular phonon modes in a fully quantum mechanical way. Based on ab initio calculations, we derive charge transfer rates that improve on the widely used semiclassical Marcus rate and obtain benchmark results for the mobility and energetic relaxation of electrons and holes in three semiconductors commonly applied in organic light-emitting diodes. Surprisingly, we find very similar results when using the simple Miller-Abrahams rate. We conclude that extracting the disorder strength from temperature-dependent charge transport studies is very possible but extracting the reorganization energy is not.

  3. Quantum theory of the optical and electronic properties of semiconductors

    CERN Document Server

    Haug, Hartmut

    1990-01-01

    The current technological revolution in the development of computing devices has created a demand for a textbook on the quantum theory of the electronic and optical properties of semiconductors and semiconductor devices. This book successfully fulfills this need. Based on lectures given by the authors, it is a comprehensive introduction for researchers or graduate-level students to the subject. Certain sections can also serve as a graduate-level textbook for use in solid state physics courses or for more specialized courses. The final chapters establish a direct link to current research in sem

  4. Quantum spin transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schindler, Christoph

    2012-05-15

    In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

  5. Quantum spin transport in semiconductor nanostructures

    International Nuclear Information System (INIS)

    Schindler, Christoph

    2012-01-01

    In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

  6. Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene.

    Science.gov (United States)

    Yu, Young-Jun; Kim, Keun Soo; Nam, Jungtae; Kwon, Se Ra; Byun, Hyeryoung; Lee, Kwanjae; Ryou, Jae-Hyun; Dupuis, Russell D; Kim, Jeomoh; Ahn, Gwanghyun; Ryu, Sunmin; Ryu, Mee-Yi; Kim, Jin Soo

    2015-02-11

    Resonance energy transfer (RET) has been employed for interpreting the energy interaction of graphene combined with semiconductor materials such as nanoparticles and quantum-well (QW) heterostructures. Especially, for the application of graphene as a transparent electrode for semiconductor light emitting diodes, the mechanism of exciton recombination processes such as RET in graphene-semiconductor QW heterojunctions should be understood clearly. Here, we characterized the temperature-dependent RET behaviors in graphene/semiconductor QW heterostructures. We then observed the tuning of the RET efficiency from 5% to 30% in graphene/QW heterostructures with ∼60 nm dipole-dipole coupled distance at temperatures of 300 to 10 K. This survey allows us to identify the roles of localized and free excitons in the RET process from the QWs to graphene as a function of temperature.

  7. Quantum computing based on semiconductor nanowires

    NARCIS (Netherlands)

    Frolov, S.M.; Plissard, S.R.; Nadj-Perge, S.; Kouwenhoven, L.P.; Bakkers, E.P.A.M.

    2013-01-01

    A quantum computer will have computational power beyond that of conventional computers, which can be exploited for solving important and complex problems, such as predicting the conformations of large biological molecules. Materials play a major role in this emerging technology, as they can enable

  8. Development and Application of Semiconductor Quantum Dots to Quantum Computing

    National Research Council Canada - National Science Library

    Steel, Duncan

    2002-01-01

    .... Several major milestones were achieved during the present program including the demonstration of optically induced and detected quantum entanglement of two qubits, Rabi oscillation (one bit rotation...

  9. Quantum information processing with electronic and nuclear spins in semiconductors

    Science.gov (United States)

    Klimov, Paul Victor

    Traditional electronic and communication devices operate by processing binary information encoded as bits. Such digital devices have led to the most advanced technologies that we encounter in our everyday lives and they influence virtually every aspect of our society. Nonetheless, there exists a much richer way to encode and process information. By encoding information in quantum mechanical states as qubits, phenomena such as coherence and entanglement can be harnessed to execute tasks that are intractable to digital devices. Under this paradigm, it should be possible to realize quantum computers, quantum communication networks and quantum sensors that outperform their classical counterparts. The electronic spin states of color-center defects in the semiconductor silicon carbide have recently emerged as promising qubit candidates. They have long-lived quantum coherence up to room temperature, they can be controlled with mature magnetic resonance techniques, and they have a built-in optical interface operating near the telecommunication bands. In this thesis I will present two of our contributions to this field. The first is the electric-field control of electron spin qubits. This development lays foundation for quantum electronics that operate via electrical gating, much like traditional electronics. The second is the universal control and entanglement of electron and nuclear spin qubits in an ensemble under ambient conditions. This development lays foundation for quantum devices that have a built-in redundancy and can operate in real-world conditions. Both developments represent important steps towards practical quantum devices in an electronic grade material.

  10. THz quantum-confined Stark effect in semiconductor quantum dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Monozon, Boris S.; Livshits, Daniil A.

    2012-01-01

    We demonstrate an instantaneous all-optical manipulation of optical absorption at the ground state of InGaAs/GaAs quantum dots (QDs) via a quantum-confined Stark effect (QCSE) induced by the electric field of incident THz pulses with peak electric fields reaching 200 kV/cm in the free space...

  11. Dynamics of spins in semiconductor quantum wells under drift

    International Nuclear Information System (INIS)

    Idrish Miah, M.

    2009-01-01

    The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P PL ) was measured at different temperatures. The P PL was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P PL was also found to depend on the temperature. The P PL in the presence of a transverse magnetic field was also studied. The results showed that P PL in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.

  12. Dynamics of spins in semiconductor quantum wells under drift

    Energy Technology Data Exchange (ETDEWEB)

    Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2009-09-15

    The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P{sub PL}) was measured at different temperatures. The P{sub PL} was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P{sub PL} was also found to depend on the temperature. The P{sub PL} in the presence of a transverse magnetic field was also studied. The results showed that P{sub PL} in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.

  13. Optical generation and control of quantum coherence in semiconductor nanostructures

    CERN Document Server

    Slavcheva, Gabriela

    2010-01-01

    The unprecedented control of coherence that can be exercised in quantum optics of atoms and molecules has stimulated increasing efforts in extending it to solid-state systems. One motivation to exploit the coherent phenomena comes from the emergence of the quantum information paradigm, however many more potential device applications ranging from novel lasers to spintronics are all bound up with issues in coherence. The book focuses on recent advances in the optical control of coherence in excitonic and polaritonic systems as model systems for the complex semiconductor dynamics towards the goal

  14. Semiconductor Quantum Dash Broadband Emitters: Modeling and Experiments

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2013-10-01

    Broadband light emitters operation, which covers multiple wavelengths of the electromagnetic spectrum, has been established as an indispensable element to the human kind, continuously advancing the living standard by serving as sources in important multi-disciplinary field applications such as biomedical imaging and sensing, general lighting and internet and mobile phone connectivity. In general, most commercial broadband light sources relies on complex systems for broadband light generation which are bulky, and energy hungry. \\tRecent demonstration of ultra-broadband emission from semiconductor light sources in the form of superluminescent light emitting diodes (SLDs) has paved way in realization of broadband emitters on a completely novel platform, which offered compactness, cost effectiveness, and comparatively energy efficient, and are already serving as a key component in medical imaging systems. The low power-bandwidth product is inherent in SLDs operating in the amplified spontaneous emission regime. A quantum leap in the advancement of broadband emitters, in which high power and large bandwidth (in tens of nm) are in demand. Recently, the birth of a new class of broadband semiconductor laser diode (LDs) producing multiple wavelength light in stimulated emission regime was demonstrated. This very recent manifestation of a high power-bandwidth-product semiconductor broadband LDs relies on interband optical transitions via quantum confined dot/dash nanostructures and exploiting the natural inhomogeneity of the self-assembled growth technology. This concept is highly interesting and extending the broad spectrum of stimulated emission by novel device design forms the central focus of this dissertation. \\tIn this work, a simple rate equation numerical technique for modeling InAs/InP quantum dash laser incorporating the properties of inhomogeneous broadening effect on lasing spectra was developed and discussed, followed by a comprehensive experimental analysis

  15. Single electron-spin memory with a semiconductor quantum dot

    International Nuclear Information System (INIS)

    Young, Robert J; Dewhurst, Samuel J; Stevenson, R Mark; Atkinson, Paola; Bennett, Anthony J; Ward, Martin B; Cooper, Ken; Ritchie, David A; Shields, Andrew J

    2007-01-01

    We show storage of the circular polarization of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently read out through the electronically-triggered emission of a single photon. The emitted photon shares the same polarization as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 T, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime

  16. Electron Liquids in Semiconductor Quantum Structures

    International Nuclear Information System (INIS)

    Pinczuk, Aron

    2009-01-01

    The groups led by Stormer and Pinczuk have focused this project on goals that seek the elucidation of novel many-particle effects that emerge in two-dimensional electron systems (2DES) as the result from fundamental quantum interactions. This experimental research is conducted under extreme conditions of temperature and magnetic field. From the materials point of view, the ultra-high mobility systems in GaAs/AlGaAs quantum structures continue to be at the forefront of this research. The newcomer materials are based on graphene, a single atomic layer of graphite. The graphene research is attracting enormous attention from many communities involved in condensed matter research. The investigated many-particle phenomena include the integer and fractional quantum Hall effect, composite fermions, and Dirac fermions, and a diverse group of electron solid and liquid crystal phases. The Stormer group performed magneto-transport experiments and far-infrared spectroscopy, while the Pinczuk group explores manifestations of such phases in optical spectra.

  17. Electron Liquids in Semiconductor Quantum Structures

    Energy Technology Data Exchange (ETDEWEB)

    Aron Pinczuk

    2009-05-25

    The groups led by Stormer and Pinczuk have focused this project on goals that seek the elucidation of novel many-particle effects that emerge in two-dimensional electron systems (2DES) as the result from fundamental quantum interactions. This experimental research is conducted under extreme conditions of temperature and magnetic field. From the materials point of view, the ultra-high mobility systems in GaAs/AlGaAs quantum structures continue to be at the forefront of this research. The newcomer materials are based on graphene, a single atomic layer of graphite. The graphene research is attracting enormous attention from many communities involved in condensed matter research. The investigated many-particle phenomena include the integer and fractional quantum Hall effect, composite fermions, and Dirac fermions, and a diverse group of electron solid and liquid crystal phases. The Stormer group performed magneto-transport experiments and far-infrared spectroscopy, while the Pinczuk group explores manifestations of such phases in optical spectra.

  18. Dimensionality effects on the conductance of semiconductor quantum wires

    International Nuclear Information System (INIS)

    Dacal, Luis C.O.; Damiao, Alvaro Jose; Andrada e Silva, E.A. de

    2004-01-01

    Full text: 'Spintronics' is a new kind of electronics based on the spin instead of charge of electrons [1]. It opens the possibility for faster devices and reduction of power consuming. This new field of research has received great attention from scientists in recent years [2]. Within the Kane model, spin-orbit interaction couples the three spatial coordinates dynamics for electrons in semiconductor heterostructures [3]. As a consequence, the control of spin transport in semiconductor nanostructures requires a three-dimensional description of the system. Strictly two-dimensional (2D) and three-dimensional (3D) descriptions are known in literature [4], but no attention has been devoted to the transition between them. In this work, we address this question calculating the conductance of a quantum wire with infinite contacts in a strictly 2D, quasi-2D and strictly 3D models. This study allows to better understand the mechanisms that contribute to the conductance in absence of spin-orbit interaction. We consider ballistic quantum regime, the same material for contacts and wire and we employ Landauer-Buttiker formula, 'mode matching' technique [4] and envelope function formalism. Our results reproduce the typical conductance oscillations and the well known mode degeneracy for 3D systems [4]. We prove that the critical parameters controlling the amplitude of these oscillations are the ratios between the wire and contacts transversal lengths, while the wire longitudinal length determines the position and shape of the peaks. This work is supported by FAPESP and CNPq. [1] Min Ouyang and David D. Awschalom, Science 301, 1074 (2003); Shuichi Murakami, Naoto Nagaosa, and Shou-Cheng Zhang, Science 301, 1348 (2003) [2] Proceedings of the 2002 PASPS, Wuerzburg, Germany, Journal of Superconductivity, Special Issue, April 2003[3] E. A. de Andrada e Silva, G. C. La Rocca and F. Bassani, Phys. Rev. B 50, 8523 (1994) [4] George Kirczenow, Phys. Rev. B 39, 10452 (1989); Karl

  19. Computational models for the berry phase in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakar, S., E-mail: rmelnik@wlu.ca; Melnik, R. V. N., E-mail: rmelnik@wlu.ca [M2NeT Lab, Wilfrid Laurier University, 75 University Ave W, Waterloo, ON N2L 3C5 (Canada); Sebetci, A. [Department of Mechanical Engineering, Mevlana University, 42003, Konya (Turkey)

    2014-10-06

    By developing a new model and its finite element implementation, we analyze the Berry phase low-dimensional semiconductor nanostructures, focusing on quantum dots (QDs). In particular, we solve the Schrödinger equation and investigate the evolution of the spin dynamics during the adiabatic transport of the QDs in the 2D plane along circular trajectory. Based on this study, we reveal that the Berry phase is highly sensitive to the Rashba and Dresselhaus spin-orbit lengths.

  20. Property analysis of colloidal quantum dot in semiconductor nanostructure

    Science.gov (United States)

    Mary, Nusrat Irin Chowdhury; Islam, Md. Ariful

    2017-12-01

    Colloidal Quantum Dots (Semiconductor self-assembled QD), as a result of their fully quantized electronic states and high radiative efficiencies, which enable major advances in fundamental physics studies of electrons in zero-dimensionality semiconductor systems and in a variety of novel device applications. This paper reviews the analysis, covering the simulation reading of conical quantum dot with both-single QD and multi-layer QD structure as well as the analytical model for exploration of conical QD waveshape of the quantum-confined systems with different light polarized absorption and sweep parameters. The corresponding temperature of the electron Fermi level with different boundary conditions with the X, Y, and Z - dimensional of the QD conical structure is a responsible for unlike eigen-energy states. The paper shows a comprehensive understanding of the quantum confined 0D electronic structure with its conduction and valence energy band and with varying eigen-energy states, this dynamic process underpins the various device applications.

  1. Semiconductor-inspired design principles for superconducting quantum computing.

    Science.gov (United States)

    Shim, Yun-Pil; Tahan, Charles

    2016-03-17

    Superconducting circuits offer tremendous design flexibility in the quantum regime culminating most recently in the demonstration of few qubit systems supposedly approaching the threshold for fault-tolerant quantum information processing. Competition in the solid-state comes from semiconductor qubits, where nature has bestowed some very useful properties which can be utilized for spin qubit-based quantum computing. Here we begin to explore how selective design principles deduced from spin-based systems could be used to advance superconducting qubit science. We take an initial step along this path proposing an encoded qubit approach realizable with state-of-the-art tunable Josephson junction qubits. Our results show that this design philosophy holds promise, enables microwave-free control, and offers a pathway to future qubit designs with new capabilities such as with higher fidelity or, perhaps, operation at higher temperature. The approach is also especially suited to qubits on the basis of variable super-semi junctions.

  2. Exciton coherence in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Ishi-Hayase, Junko; Akahane, Kouichi; Yamamoto, Naokatsu; Sasaki, Masahide; Kujiraoka, Mamiko; Ema, Kazuhiro

    2009-01-01

    The coherent dynamics of excitons in InAs quantum dots (QDs) was investigated in the telecommunication wavelength range using a transient four-wave mixing technique. The sample was fabricated on an InP(311)B substrate using strain compensation to control the emission wavelength. This technique also enabled us to fabricate a 150-layer stacked QD structure for obtaining a high S/N in the four-wave mixing measurements, although no high-sensitive heterodyne detection was carried out. The dephasing time and transition dipole moment were precisely estimated from the polarization dependence of signals, taking into account their anisotropic properties. The population lifetimes of the excitons were also measured by using a polarization-dependent pumpprobe technique. A quantitative comparison of these anisotropies demonstrates that in our QDs, non-radiative population relaxation, polarization relaxation and pure dephasing are considerably smaller than the radiative relaxation. A comparison of the results of the four-wave mixing and pump-probe measurements revealed that the pure dephasing could be directly estimated with an accuracy of greater than 0.1 meV by comparing the results of four-wave mixing and pump-probe measurements. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

    Science.gov (United States)

    Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.

    2018-01-01

    We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

  4. Quantum Electrodynamics with Semiconductor Quantum Dots Coupled to Anderson‐localized Random Cavities

    DEFF Research Database (Denmark)

    Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

    2011-01-01

    We demonstrate that the spontaneous emission decay rate of semiconductor quantum dots can be strongly modified by the coupling to disorder-induced Anderson-localized photonic modes. We experimentally measure, by means of time-resolved photoluminescence spectroscopy, the enhancement of the spontan...

  5. Potential energy surface of excited semiconductors: Graphene quantum dot and BODIPY

    Energy Technology Data Exchange (ETDEWEB)

    Colherinhas, Guilherme [Departamento de Física-CEPAE, Universidade Federal de Goiás, 74690-900 Goiânia (Brazil); Fileti, Eudes Eterno [Instituto de Ciência e Tecnologia, Universidade Federal de São Paulo, 12231-280 São José dos Campos, SP (Brazil); Chaban, Vitaly V., E-mail: vvchaban@gmail.com [Instituto de Ciência e Tecnologia, Universidade Federal de São Paulo, 12231-280 São José dos Campos, SP (Brazil)

    2016-08-02

    Graphical abstract: Excitation of graphene quantum dot significantly alters its interaction with water. - Abstract: Binding energy (BE) is an important descriptor in chemistry, which determines thermodynamics and phase behavior of a given substance. BE between two molecules is not directly accessible from the experiment. It has to be reconstructed from cohesive energies, vaporization heats, etc. We report BE for the excited states of two semiconductor molecules – boron-dipyrromethene (BODIPY) and graphene quantum dot (GQD) – with water. We show, for the first time, that excitation increases BE twofold at an optimal separation (energy minimum position), whereas higher separations lead to higher differences. Interestingly, the effects of excitation are similar irrespective of the dominant binding interactions (van der Waals or electrostatic) in the complex. This new knowledge is important for simulations of the excited semiconductors by simplified interaction functions.

  6. A Novel Laser Technology for Nanostructure Formation in Elementary Semiconductors: Quantum Confinement Effect

    OpenAIRE

    Medvids, A; Onufrijevs, P; Dmitruk, M; Dmitruk, I; Pundyk, I

    2009-01-01

    Nowadays, nanostructures are one of the most investigated objects in solid-state physics, especially Quantum confinement effect in quantum dots, quantum wires and quantum wells. In the case of nanosize structures the energy band diagram of semiconductor has strongly changed. This leads to a crucial change of semiconductor properties such as: electrical (due to the change of free charge carrier concentration and electrons’ and holes’ mobility); optical (absorption coefficient, reflectivity in...

  7. Photoluminescence intermittency of semiconductor quantum dots in dielectric environments

    Energy Technology Data Exchange (ETDEWEB)

    Isaac, A.

    2006-08-11

    The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)

  8. Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array

    Science.gov (United States)

    Hensgens, T.; Fujita, T.; Janssen, L.; Li, Xiao; van Diepen, C. J.; Reichl, C.; Wegscheider, W.; Das Sarma, S.; Vandersypen, L. M. K.

    2017-08-01

    Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.

  9. Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.

    Science.gov (United States)

    Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K

    2017-08-02

    Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.

  10. Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System.

    Science.gov (United States)

    He, Yong; Zhu, Ka-Di

    2017-06-20

    In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

  11. Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

    Directory of Open Access Journals (Sweden)

    Yong He

    2017-06-01

    Full Text Available In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP and the excitons in semiconductor quantum dots (SQDs in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

  12. (DARPA) Topologically Protected Quantum Information Processing In Spin-Orbit Compled Semiconductors

    Science.gov (United States)

    2013-12-17

    tunneling peak experiments performed in our proposed semiconductor heterostructures in detail, explaining the absence of the gap closing signatures...true smoking-gun signature of MFs in spin-orbit coupled semiconductor nanowires in terms of a charge tunneling quantum interference experiment...5) Unambiguous determination of Majorana fermions: Charge tunneling interference in semiconductor nanowires : Using the fractionalization property

  13. Optical gain and laser properties of semiconductor quantum-dot systems

    Energy Technology Data Exchange (ETDEWEB)

    Lorke, Michael

    2008-12-17

    For practical applications of quantum dots in light emitters as well as for fundamental studies of their emission properties, the understanding of many-body processes plays a central role. We employ a microscopic theory to study the optical properties of semiconductor quantum dots. The excitation-induced polarization dephasing due to carrier-phonon and carrier-carrier Coulomb interaction as well as the corresponding lineshifts of the optical interband transitions are determined on the basis of a quantum-kinetic treatment of correlation processes. Our theoretical model includes non-Markovian effects as well as renormalized single-particle states. Thus we achieve an accurate description of the partial compensation between different dephasing contributions and are able to systematically study their temperature and density dependencies. Applications of this theoretical model include optical gain spectra for quantum-dot systems that reveal a novel effect, not present in other gain materials. For large carrier densities, the maximum gain can decrease with increasing carrier density. This behavior arises from a delicate balancing of state filling and dephasing, and implies the necessity of an accurate treatment of the carrier-density dependence of correlations. Measurements of the coherence properties of the light emitted from semiconductor quantum-dot lasers have raised considerable attention in recent years. We study the correlations between individual emission events on the basis of a microscopic semiconductor laser theory. This allows for a study of effects like Pauli blocking, modifications to the source term of spontaneous emission, and the absence of complete inversion, that strongly influence the emission characteristics of quantum dot based devices. A new and challenging material system for applications in the visible spectral range are nitride semiconductors. As crystal symmetry and bandmixing effects strongly influence the optical selection rules, the single

  14. Artificially Structured Semiconductors to Model Novel Quantum Phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Pinczuk, Aron [Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics; Wind, Shalom J. [Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics

    2018-01-13

    Award Period: September 1st, 2013 through February 15th, 2017 Submitted to the USDOE Office of Basic Energy Sciences By Aron Pinczuk and Shalom J. Wind Department of Applied Physics and Applied Mathematics Columbia University New York, NY 10027 January 2017 Award # DE-SC0010695 ABSTRACT Research in this project seeks to design, create and study a class of tunable artificial quantum structures in order to extend the range and scope of new and exciting physical phenomena and to explore the potential for new applications. Advanced nanofabrication was used to create an external potential landscape that acts as a lattice of confinement sites for electrons (and/or holes) in a two-dimensional electron gas in a high perfection semiconductor in such a manner that quantum interactions between different sites dictate the significant physics. Our current focus is on ‘artificial graphene’ (AG) in which a set of quantum dots (or sites) are patterned in a honeycomb lattice. The combination of leading edge nanofabrication with ultra-pure semiconductor materials in this project extends the frontier for small period, low-disorder AG systems, enabling the exploration of graphene physics in a semiconductor platform. TECHNICAL DESCRIPTION Contemporary condensed matter science has entered an era of discovery of new low-dimensional materials, such as graphene and other atomically thin materials, that exhibit exciting new physical phenomena that were previously inaccessible. Concurrent with the discovery and development of these new materials are impressive advancements in nanofabrication, which offer an ever-expanding toolbox for creating a myriad of high quality patterns at nanoscale dimensions. This project started about four years ago. Among its major achievements are the realizations of very small period artificial lattices with honeycomb topology in GaAs quantum wells. In our most recent work the periods of the ‘artificial graphene’ (AG) lattices extend down to 40 nm. These

  15. Quantum correlation control for two semiconductor microcavities connected by an optical fiber

    Science.gov (United States)

    Mohamed, A.-B. A.; Eleuch, H.

    2017-06-01

    We explore the quantum correlations for two coupled quantum wells. Each quantum well is inside a semiconductor microcavity. The two cavities are connected by an optical fiber. The study of quantum correlations, namely the geometric quantum discord, measurement-induced non-locality and negativity, reveals sudden death and sudden birth phenomena. These effects depend not only on the initial states, coupling strengths of the cavity-fiber and cavity-exciton constants, but also on the dissipation rates of the semiconductor microcavities. We show that the coupling constants control the quantum correlations.

  16. Direct self-assembling and patterning of semiconductor quantum dots on transferable elastomer layer

    Energy Technology Data Exchange (ETDEWEB)

    Coppola, Sara [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy); Vespini, Veronica, E-mail: v.vespini@isasi.cnr.it [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy); Olivieri, Federico [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy); University of Naples Federico II, Department of Chemical Materials and Production Engineering, Piazzale Tecchio 80, Naples 80125 (Italy); Nasti, Giuseppe; Todino, Michele; Mandracchia, Biagio; Pagliarulo, Vito; Ferraro, Pietro [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy)

    2017-03-31

    Highlights: • A quantum dots self-patterning on micrometrical polymeric array is proposed. • The effect of a quantum dots mix on the array is evaluated. • A PDMS membrane is exploited to transfer the pattern on it. - Abstract: Functionalization of thin and stretchable polymer layers by nano- and micro-patterning of nanoparticles is a very promising field of research that can lead to many different applications in biology and nanotechnology. In this work, we present a new procedure to self-assemble semiconductor quantum dots (QDs) nanoparticles by a simple fabrication process on a freestanding flexible PolyDiMethylSiloxane (PDMS) membrane. We used a Periodically Poled Lithium Niobate (PPLN) crystal to imprint a micrometrical pattern on the PDMS membrane that drives the QDs self-structuring on its surface. This process allows patterning QDs with different wavelength emissions in a single step in order to tune the overall emission spectrum of the composite, tuning the QDs mixing ratio.

  17. Two stream instability in n-type gallium arsenide semiconductor quantum plasma

    Science.gov (United States)

    Ghosh, S.; Muley, Apurva

    2018-01-01

    By using quantum hydrodynamic model, we derive a generalized dielectric response function for two stream instability (convective only) in n-type gallium arsenide semiconductor plasma. We investigate the phase and amplification profiles of two stream instability with externally applied electric field ranging from 2600 to 4000 kV m-1 in presence of non-dimensional quantum parameter- H. In this range, a significant number of electrons in satellite valley become comparable to the number of electrons in central valley. The presence of quantum corrections in plasma medium induces two novel modes; one of it has amplifying nature and propagates in forward direction. It also modifies the spectral profile of four pre-existing modes in classical plasma. The existence of two stream instability is also established analytically by deriving the real part of longitudinal electrokinetic power flow density.

  18. Andreev molecules in semiconductor nanowire double quantum dots.

    Science.gov (United States)

    Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

    2017-09-19

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

  19. Development of segmented semiconductor arrays for quantum imaging

    CERN Document Server

    Mikulec, Bettina

    2003-01-01

    The field of pixel detectors has grown strongly in recent years through progress in CMOS technology, which permits many hundreds of transistors to be implemented in an area of 50-200 um2. Pulse processing electronics with noise of the order of 100 e- RMS permits to distinguish photons of a few keV from background noise. Techniques are under development, which should allow single chip systems (area ~1 cm2) to be extended to larger areas. This paper gives an introduction into the concept of quantum imaging using direct conversion in segmented semiconductor arrays. An overview of projects from this domain using strip, pad and in particular hybrid pixel detectors will be presented. One of these projects, the Medipix project, is described in more detail. The effect of different correction methods like threshold adjustment and flat field correction is illustrated and new measurement results and images presented.

  20. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    NARCIS (Netherlands)

    Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2016-01-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the

  1. Threshold for photoelectric emission from a quantum ring of narrow-gap semiconductor

    International Nuclear Information System (INIS)

    Das, N.R.; Sen, Susmita

    2008-01-01

    In this paper, we have investigated the threshold energy required for photoelectric emission of electrons from a torroidal quantum ring of degenerate narrow-gap semiconductor. Current density due to electrons emitted from the ring illuminated by normal radiation has been calculated considering the effect of band non-parabolicity of the narrow-gap semiconductor. The computed results show that the current density increases in a staircase manner with the increase of incident photon energy. The band non-parabolicity causes the increase in threshold energy for photoelectric emission of electrons. The photoemission becomes an oscillatory function of the cross-sectional radius of the ring, and may serve as an important tool for estimating parameters like cross-sectional radius, doping density and band non-parabolicity

  2. Theory of photovoltaic characteristics of semiconductor quantum dot solar cells

    International Nuclear Information System (INIS)

    Wu, Yuchang; Asryan, Levon V.

    2016-01-01

    We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.

  3. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Herzog, Bastian, E-mail: BHerzog@physik.tu-berlin.de; Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike [Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany); Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  4. Efficient calculation of dissipative quantum transport properties in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Greck, Peter

    2012-11-26

    We present a novel quantum transport method that follows the non-equilibrium Green's function (NEGF) framework but side steps any self-consistent calculation of lesser self-energies by replacing them by a quasi-equilibrium expression. We termed this method the multi-scattering Buettiker-Probe (MSB) method. It generalizes the so-called Buettiker-Probe model but takes into account all relevant individual scattering mechanisms. It is orders of magnitude more efficient than a fully selfconsistent non-equilibrium Green's function calculation for realistic devices, yet accurately reproduces the results of the latter method as well as experimental data. This method is fairly easy to implement and opens the path towards realistic three-dimensional quantum transport calculations. In this work, we review the fundamentals of the non-equilibrium Green's function formalism for quantum transport calculations. Then, we introduce our novel MSB method after briefly reviewing the original Buettiker-Probe model. Finally, we compare the results of the MSB method to NEGF calculations as well as to experimental data. In particular, we calculate quantum transport properties of quantum cascade lasers in the terahertz (THz) and the mid-infrared (MIR) spectral domain. With a device optimization algorithm based upon the MSB method, we propose a novel THz quantum cascade laser design. It uses a two-well period with alternating barrier heights and complete carrier thermalization for the majority of the carriers within each period. We predict THz laser operation for temperatures up to 250 K implying a new temperature record.

  5. Instantaneous amplitude and frequency dynamics of coherent wave mixing in semiconductor quantum wells

    International Nuclear Information System (INIS)

    Chemla, D.S.

    1993-01-01

    This article reviews recent investigations of nonlinear optical processes in semiconductors. Section II discusses theory of coherent wave mixing in semiconductors, with emphasis on resonant excitation with only one exciton state. Section III reviews recent experimental investigations of amplitude and phase of coherent wave-mixing resonant with quasi-2d excitons in GaAs quantum wells

  6. Quantum dynamical phenomena of independent electrons in semiconductor superlattices subject to a uniform electric field

    International Nuclear Information System (INIS)

    Bouchard, A.M.

    1994-01-01

    This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices

  7. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  8. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  9. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  10. Towards quantum optics and entanglement with electron spin ensembles in semiconductors

    NARCIS (Netherlands)

    van der Wal, Caspar H.; Sladkov, Maksym

    We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses electron ensembles in GaAs quantum wells that are located inside

  11. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Science.gov (United States)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-06-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  12. Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons.

    Science.gov (United States)

    Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J; Treutlein, Philipp

    2017-08-11

    Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.

  13. Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

    Science.gov (United States)

    Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

    2017-08-01

    Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

  14. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    Science.gov (United States)

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

    2015-03-01

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.

  15. Emergent functions of quantum materials

    Science.gov (United States)

    Tokura, Yoshinori; Kawasaki, Masashi; Nagaosa, Naoto

    2017-11-01

    Materials can harbour quantum many-body systems, most typically in the form of strongly correlated electrons in solids, that lead to novel and remarkable functions thanks to emergence--collective behaviours that arise from strong interactions among the elements. These include the Mott transition, high-temperature superconductivity, topological superconductivity, colossal magnetoresistance, giant magnetoelectric effect, and topological insulators. These phenomena will probably be crucial for developing the next-generation quantum technologies that will meet the urgent technological demands for achieving a sustainable and safe society. Dissipationless electronics using topological currents and quantum spins, energy harvesting such as photovoltaics and thermoelectrics, and secure quantum computing and communication are the three major fields of applications working towards this goal. Here, we review the basic principles and the current status of the emergent phenomena and functions in materials from the viewpoint of strong correlation and topology.

  16. Nonlinear optics response of semiconductor quantum wells under high magnetic fields

    International Nuclear Information System (INIS)

    Chemla, D.S.

    1993-07-01

    Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW's as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H → ∞. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed

  17. High-order sideband generation in a semiconductor quantum well driven by two orthogonal terahertz fields

    Science.gov (United States)

    Yan, Jie-Yun

    2017-08-01

    The theory of excitonic high-order sideband generation (HSG) in a semiconductor quantum well irradiated by two orthogonal terahertz (THz) fields (one frequency is an integral multiple of the other) is presented. The exact analytical solution to the sideband spectrum is given with the help of the generalized Bessel functions. As a special case, the HSG when the frequencies of these two THz fields are the same is derived and its dependence on the ellipticity of the THz field is discussed. The theory could explain the experiments, especially concerning the sensitive dependence of HSG signals on the ellipticity of the THz field: the signals are strong when the THz field has a linear polarization and totally vanish in case of a circular polarization. More interestingly, it was found that the strongest signal is not produced in the case of linear polarization for some sidebands. The theory is supported by numerical calculations.

  18. Broadband microwave phase shifter based on high speed cross gain modulation in quantum dot semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2009-01-01

    We present a scheme to achieve tunable ~180 degrees microwave phase shifts at frequencies exceeding 100 GHz based on high speed cross gain modulation in quantum dot semiconductor optical amplifiers.......We present a scheme to achieve tunable ~180 degrees microwave phase shifts at frequencies exceeding 100 GHz based on high speed cross gain modulation in quantum dot semiconductor optical amplifiers....

  19. Nonlinear structures: Cnoidal, soliton, and periodical waves in quantum semiconductor plasma

    Energy Technology Data Exchange (ETDEWEB)

    Tolba, R. E., E-mail: tolba-math@yahoo.com; El-Bedwehy, N. A., E-mail: nab-elbedwehy@yahoo.com [Department of Mathematics, Faculty of Science Damietta University, New Damietta 34517 (Egypt); Moslem, W. M., E-mail: wmmoslem@hotmail.com [Department of Physics, Faculty of Science Port Said University, Port Said 42521 (Egypt); Centre for Theoretical Physics, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt); El-Labany, S. K., E-mail: skellabany@hotmail.com [Department of Physics, Faculty of Science Damietta University, New Damietta 34517 (Egypt); Yahia, M. E., E-mail: meyahia@gmail.com [Faculty of Engineering and Natural Sciences, International University of Sarajevo (IUS), 71210 Ilidža, Sarajevo, Bosnia and Herzegovina (Bosnia and Herzegovina)

    2016-01-15

    Properties and emerging conditions of various nonlinear acoustic waves in a three dimensional quantum semiconductor plasma are explored. A plasma fluid model characterized by degenerate pressures, exchange correlation, and quantum recoil forces is established and solved. Our analysis approach is based on the reductive perturbation theory for deriving the Kadomtsev-Petviashvili equation from the fluid model and solving it by using Painlevé analysis to come up with different nonlinear solutions that describe different pulse profiles such as cnoidal, soliton, and periodical pulses. The model is then employed to recognize the possible perturbations in GaN semiconductor.

  20. Enhancing slow- and fast-light effects in quantum dot semiconductor waveguides through ultrafast dynamics

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2011-01-01

    In this paper we review our theoretical work on slow and fast light effects in quantum dot semiconductor optical amplifiers (QD SOAs), in particular we investigate the carrier dynamical contributions to the dynamic gain grating and cross gain modulation induced by unique ultrafast inter-subband c......In this paper we review our theoretical work on slow and fast light effects in quantum dot semiconductor optical amplifiers (QD SOAs), in particular we investigate the carrier dynamical contributions to the dynamic gain grating and cross gain modulation induced by unique ultrafast inter...

  1. Optical properties of colloidal semiconductor quantum dots in dielectric media: A natural potential well approach

    Science.gov (United States)

    Jeong, Hwajun; Shin, Seung Koo

    2018-01-01

    Colloidal quantum dots exhibit size-dependent optical properties due to quantum and dielectric confinements at the semiconductor/solvent boundary. To consider both confinement effects, we take a natural potential well approach that assumes separate potential wells for electron and hole which are surrounded by dielectric media. The potential well depths for electron and hole are set by the band offsets at the semiconductor/solvent heterojunction. The kinetic energy is calculated using an effective mass approximation and the electron-hole interaction energy is obtained by taking image charges into account. For cadmium chalcogenides, resulting transition energies agree well with size-dependent optical bandgaps from experiments.

  2. Charge Carrier Dynamics of Quantum Confined Semiconductor Nanoparticles Analyzed via Transient Absorption Spectroscopy

    Science.gov (United States)

    Thibert, Arthur Joseph, III

    Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh

  3. Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

    International Nuclear Information System (INIS)

    Ma, Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Gee

    2013-01-01

    The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio. - Highlights: ► The spin polarized transport through a diluted magnetic quantum dot is studied. ► The model is based on the Green’s function and the equation of motion method.► The charge and spin currents and tunnel magnetoresistance (TMR) are investigated. ► The system is suitable for current-induced spin-transfer torque application. ► A large tunneling current and a high TMR are possible for sensor application.

  4. Peptide mediated intracellular delivery of semiconductor quantum dots

    Science.gov (United States)

    Kapur, Anshika; Safi, Malak; Domitrovic, Tatiana; Medina, Scott; Palui, Goutam; Johnson, John E.; Schneider, Joel; Mattoussi, Hedi

    2017-02-01

    As control over the growth, stabilization and functionalization of inorganic nanoparticles continue to advance, interest in integrating these materials with biological systems has steadily grown in the past decade. Much attention has been directed towards identifying effective approaches to promote cytosolic internalization of the nanoparticles while avoiding endocytosis. We describe the use of NωV virus derived gamma peptide and a chemically synthesized anticancer peptide, SVS-1 peptide, as vehicles to promote the non-endocytic uptake of luminescent quantum dots (QDs) inside live cells. The gamma peptide is expressed in E. coli as a fusion protein with poly-his tagged MBP (His-MBP-γ) to allow self-assembly onto QDs via metal-histidine conjugation. Conversely, the N-terminal cysteine residue of the SVS-1 peptide is attached to the functionalized QDs via covalent coupling chemistry. Epi-fluorescence microscopy images show that the QD-conjugate staining is distributed throughout the cytoplasm of cell cultures. Additionally, the QD staining does not show co-localization with transferrin-dye-labelled endosomes or DAPI stained nuclei. The QD uptake observed in the presence of physical and pharmacological endocytosis inhibitors further suggest that a physical translocation of QDs through the cell membrane is the driving mechanism for the uptake.

  5. Generic Hubbard model description of semiconductor quantum-dot spin qubits

    Science.gov (United States)

    Yang, Shuo; Wang, Xin; Das Sarma, S.

    2011-04-01

    We introduce a Hubbard model as the simple quantum generalization of the classical capacitance circuit model to study semiconductor quantum-dot spin qubits. We prove theoretically that our model is equivalent to the usual capacitance circuit model in the absence of quantum fluctuations. However, our model naturally includes quantum effects such as hopping and spin exchange. The parameters of the generalized Hubbard model can either be directly read off from the experimental plot of the stability diagram or be calculated from the microscopic theory, establishing a quantitative connection between the two. We show that, while the main topology of the charge stability diagram is determined by the ratio between intersite and on-site Coulomb repulsion, fine details of the stability diagram reveal information about quantum effects. Extracting quantum information from experiments using our Hubbard model approach is simple, but would require the measurement resolution to increase by an order of magnitude.

  6. Magnetosonic solitons in semiconductor plasmas in the presence of quantum tunneling and exchange correlation effects

    Science.gov (United States)

    Hussain, S.; Mahmood, S.

    2018-01-01

    Low frequency magnetosonic wave excitations are investigated in semiconductor hole-electron plasmas. The quantum mechanical effects such as Fermi pressure, quantum tunneling, and exchange-correlation of holes and electrons in the presence of the magnetic field are considered. The two fluid quantum magnetohydrodynamic model is used to study magnetosonic wave dynamics, while electric and magnetic fields are coupled via Maxwell equations. The dispersion relation of the magnetosonic wave in electron-hole semiconductor plasma propagating in the perpendicular direction of the magnetic field is obtained, and its dispersion effects are discussed. The Korteweg-de Vries equation (KdV) for magnetosonic solitons is derived by employing the reductive perturbation method. For numerical analysis, the plasma parameters are taken from the semiconductors such as GaAs, GaSb, GaN, and InP already existing in the literature. It is found that the phase velocity of the magnetosonic wave is increased with the inclusion of exchange-correlation force in the model. The soliton dip structures of the magnetosonic wave in GaN semiconductor plasma are obtained, which satisfy the quantum plasma conditions for electron and hole fluids. The magnetosonic soliton dip structures move with speed less than the magnetosonic wave phase speed in the lab frame. The effects of exchange-correlation force in the model and variations of magnetic field intensity and electron/hole density on the magnetosonic wave dip structures are also investigated numerically for illustration.

  7. Carrier-carrier relaxation kinetics in quantum well semiconductor structures with nonparabolic energy bands

    DEFF Research Database (Denmark)

    Dery, H.; Tromborg, Bjarne; Eisenstein, G.

    2003-01-01

    We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared...

  8. Spectroscopic quantum imaging using pixel-level ADCS in Semiconductor-based Hybrid pixel detectors

    NARCIS (Netherlands)

    San Segundo Bello, D.

    2009-01-01

    This thesis describes the design of a microelectronic system that can be used to build a spectroscopic imaging system, in particular a spectroscopic quantum imaging using pixel-level ADCs in semiconductor-based hybrid pixel detectors. In such a system the signal generated in the sensor by a photon

  9. Quantum wells, wires and dots theoretical and computational physics of semiconductor nanostructures

    CERN Document Server

    Harrison, Paul

    2016-01-01

    Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: - Properties of non-parabolic energy bands - Matrix solutions of the Poisson and Schrodinger equations - Critical thickness of strained materials - Carrier scattering by interface roughness, alloy disorder and impurities - Density matrix transport modelling -Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is pr...

  10. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    developed in the study of single quantum dots, characterized by sharp atomic-like transition lines revealing their zero-dimensional density of states. Substantial information about the fundamental properties of individual quantum dots, as well as their interactions with other dots and the host lattice, can...

  11. Near-field optical spectroscopy of semiconductor quantum wires

    Science.gov (United States)

    Gershoni, D.; Harris, T. D.; Pfeiffer, L. N.

    1997-09-01

    We discuss low temperature near-field scanning optical spectroscopical studies of single, nanometer dimension, cleaved edge overgrown quantum wires. We use the enhanced spatial resolution of near-field microscopy, to spectroscopically investigate these single wires, which are inaccessible to conventional far-field optical spectroscopy. We thus performed a direct experimental comparison between a two-dimensional quantum system and a single genuine one-dimensional quantum system. We show that the photoluminescence of a single quantum wire is easily distinguished from that of the surrounding quantum well. Emission from localized centers is shown to dominate the photoluminescence from both wires and wells at low temperatures. A factor of three enhancement in the optical absorption of a wire, in comparison with that of a similar well, is concluded from the photoluminescence excitation data.

  12. QCAD simulation and optimization of semiconductor double quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson

    2013-12-01

    We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design

  13. Electron Transport in Quantum Dots Defined in Low-Dimensional Semiconductor Structures

    OpenAIRE

    Larsson, Marcus

    2011-01-01

    This thesis focuses on electron transport in single and double quantum dots defined in low-dimensional, narrow-band-gap III-V semiconductor materials. Fabrication schemes are presented for defining single and double quantum dots in lateral InGaAs/InP heterostructures, either by a combination of etching and local gating or solely by local top gating. The quantum dots are here electrostatically confined in at least one dimension. This allows for insitu control of the tunnel coupling of the quan...

  14. Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots

    International Nuclear Information System (INIS)

    Eble, B.; Krebs, O.; Voisin, P.; Lemaitre, A.; Kudelski, A.; Braun, P.F.; Lombez, L.; Marie, X.; Urbaszek, B.; Amand, T.; Lagarde, D.; Renucci, P.; Kowalik, K.; Kalevich, V.K.; Kavokin, K.V.

    2006-01-01

    We present a detailed study of the hyperfine interaction between carrier and nuclear spins in InAs semiconductor quantum dots. Time resolved measurements on excitons in positively charged quantum dots show the electron spin relaxation due to random fluctuations of the spin orientation of the nuclei in the quantum dot. A complimentary aspect of the hyperfine interaction can be uncovered in single dot continuous wave photoluminescence experiments in a weak magnetic field, namely the Overhauser shift due to the dynamic polarisation of the nuclei following excitation with circularly polarised light. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Coherently driven semiconductor quantum dot at a telecommunication wavelength.

    Science.gov (United States)

    Takagi, Hiroyuki; Nakaoka, Toshihiro; Watanabe, Katsuyuki; Kumagai, Naoto; Arakawa, Yasuhiko

    2008-09-01

    We proposed and demonstrate use of optical driving pulses at a telecommunication wavelength for exciton-based quantum gate operation. The exciton in a self-assembled quantum dot is coherently manipulated at 1.3 microm through Rabi oscillation. The telecom-band exciton-qubit system incorporates standard optical fibers and fiber optic devices. The coherent manipulation of the two-level system compatible with flexible and stable fiber network paves the way toward practical optical implementation of quantum information processing devices.

  16. Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors.

    Science.gov (United States)

    Cho, Kyung-Sang; Heo, Keun; Baik, Chan-Wook; Choi, Jun Young; Jeong, Heejeong; Hwang, Sungwoo; Lee, Sang Yeol

    2017-10-10

    We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10 13 Jones) is obtained, along with three major findings: fast charge separation in monolayered quantum dots; efficient charge transport through high-mobility oxide layers (20 cm 2  V -1  s -1 ); and gate-tunable drain-current modulation. Particularly, the fast charge separation rate of 3.3 ns -1 measured with time-resolved photoluminescence is attributed to the intermediate quantum dots buried in oxide layers. These results facilitate the realization of efficient color-selective detection exhibiting a photoconductive gain of 10 7 , obtained using a room-temperature deposition of oxide layers and a solution process of quantum dots. This work offers promising opportunities in emerging applications for color detection with sensitivity, transparency, and flexibility.The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.

  17. Nodal ground states and orbital textures in semiconductor quantum dots

    Czech Academy of Sciences Publication Activity Database

    Lee, J.; Výborný, Karel; Han, J.E.; Žutič, I.

    2014-01-01

    Roč. 89, č. 4 (2014), "045315-1"-"045315-17" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : quantum dots * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  18. Light Scattering Spectroscopies of Semiconductor Nanocrystals (Quantum Dots)

    International Nuclear Information System (INIS)

    Yu, Peter Y; Gardner, Grat; Nozaki, Shinji; Berbezier, Isabelle

    2006-01-01

    We review the study of nanocrystals or quantum dots using inelastic light scattering spectroscopies. In particular recent calculations of the phonon density of states and low frequency Raman spectra in Ge nanocrystals are presented for comparison with experimental results

  19. Nanobubble induced formation of quantum emitters in monolayer semiconductors

    Science.gov (United States)

    Shepard, Gabriella D.; Ajayi, Obafunso A.; Li, Xiangzhi; Zhu, X.-Y.; Hone, James; Strauf, Stefan

    2017-06-01

    The recent discovery of exciton quantum emitters in transition metal dichalcogenides (TMDCs) has triggered renewed interest of localized excitons in low-dimensional systems. Open questions remain about the microscopic origin previously attributed to dopants and/or defects as well as strain potentials. Here we show that the quantum emitters can be deliberately induced by nanobubble formation in WSe2 and BN/WSe2 heterostructures. Correlations of atomic-force microscope and hyperspectral photoluminescence images reveal that the origin of quantum emitters and trion disorder is extrinsic and related to 10 nm tall nanobubbles and 70 nm tall wrinkles, respectively. We further demonstrate that ‘hot stamping’ results in the absence of 0D quantum emitters and trion disorder. The demonstrated technique is useful for advances in nanolasers and deterministic formation of cavity-QED systems in monolayer materials.

  20. Closed-loop design of active semiconductor quantum well material systems

    Science.gov (United States)

    Moloney, J. V.; Hader, J.; Koch, S. W.

    2005-10-01

    Semiconductor quantum well active structures are pervasive in many applications of defense related systems ranging from low power edge (DFB), VCSEL and VCSEL emitter arrays to high power low brightness broad area emitters and diode bars. Recent breakthroughs in the development of a new class of high brightness vertical external cavity (VECSEL) emitters offers the potential to replace solid state YAG kW-class laser weapons systems. Remarkably, despite the maturity and dramatic improvement in quality of semiconductor QW growth over the past three decades, there has been no truly predictive means of designing the semiconductor active structure and fast-tracking to a final packaged device. We will describe a fully self-consistent microscopic many-body approach to calculate optical gain, absorption, refractive index spectra and nonradiative recombination rates for a broad class of semiconductor quantum well material systems. The theoretical calculations are free of ad hoc parameter adjustments and provide, for the first time, a means of designing an active semiconductor epi-structure in a predictive manner.

  1. Photon-Storage in Optical Memory Cells Based on a Semiconductor Quantum Dot-Quantum Well Hybrid Structure

    Science.gov (United States)

    Bian, Song-Bao; Tang, Yan; Li, Gui-Rong; Li, Yue-Xia; Yang, Fu-Hua; Zheng, Hou-Zhi; Zeng, Yi-Ping

    2003-08-01

    We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)-quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of 100 ms has been obtained at a temperature of 10 K while the switching speed reaches the order of ten megahertz.

  2. Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots

    Energy Technology Data Exchange (ETDEWEB)

    Paiella, Roberto [Boston Univ., MA (United States); Moustakas, Theodore D. [Boston Univ., MA (United States)

    2017-07-31

    This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles located within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical

  3. The effects of geometrical configurations on the head collision on nonlinear solitary pulses in a quantum semiconductor plasma: A case study on GaAs semiconductor

    Science.gov (United States)

    EL-Shamy, E. F.; Gohman, F. S.; Alqahtani, M. M.; AlFaify, S.

    2018-01-01

    An investigation is presented to examine nonlinear electrostatic waves in a quantum semiconductor plasma. A quantum semiconductor plasma model consisting of electrons and holes is going to be used, which includes exchange-correlation potentials, the quantum recoil effect, and degenerate pressures of electrons and holes. Actually, a nonlinear solitary pulse can be used to represent the intrinsic coherent electrostatic wave in a quantum semiconductor plasma. The propagation and the collision of nonlinear solitary pulses are examined by the extended Poincaré-Lighthill-Kuo method. Typical values for the GaAs semiconductors are employed to investigate the basic characteristics of solitary pulses. The numerical studies show that the energies and then the trajectories of nonlinear solitary pulses after the collision are significantly changed due to the effects of the exchange and correlation potentials and the variety in the studied system's geometry. The results obtained here may be useful for gaining a better understanding of the basic features of the nonlinear solitary pulses in quantum semiconductor plasmas.

  4. Exploring semiconductor quantum dots and wires by high resolution electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Molina, S I [Departamento de Ciencia de los Materiales e Ing Metalurgica y Q. Inorganica, F. de Ciencias, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Gonzalez, L; Ripalda, J M [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Varela, M; Pennycook, S J, E-mail: sergio.molina@uca.e [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge TN 37831 (United States)

    2010-02-01

    We review in this communication our contribution to the structural characterisation of semiconductor quantum dots and wires by high resolution electron microscopy, both in phase-contrast and Z-contrast modes. We show how these techniques contribute to predict the preferential sites of nucleation of these nanostructures, and also determine the compositional distribution in 1D and 0D nanostructures. The results presented here were produced in the framework of the European Network of Excellence entitled {sup S}elf-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE){sup .}

  5. Photo-Induced Spin Dynamics in Semiconductor Quantum Wells.

    Science.gov (United States)

    Miah, M Idrish

    2009-01-17

    We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P(PL)) with and without magnetic field is studied. The P(PL) without magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However, P(PL) in a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron-hole exchange interaction in the electric field.

  6. Photo-Induced Spin Dynamics in Semiconductor Quantum Wells

    Directory of Open Access Journals (Sweden)

    Miah M

    2009-01-01

    Full Text Available Abstract We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P PL with and without magnetic field is studied. TheP PLwithout magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However,P PLin a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron–hole exchange interaction in the electric field.

  7. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Nevedomskiy, V. N., E-mail: nevedom@mail.ioffe.ru; Bert, N. A.; Chaldyshev, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  8. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-01-01

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix

  9. Peptide-coated semiconductor quantum dots and their applications in biological imaging of single molecules in live cells and organisms

    Science.gov (United States)

    Pinaud, Fabien Florent

    2007-12-01

    A new surface chemistry has been developed for the solubilization and biofunctionalization of inorganic semiconductor nanocrystals fluorescent probes, also known as quantum dots. This chemistry is based on the surface coating of quantum dots with custom-designed polycysteine peptides and yields water-soluble, small, monodispersed and colloidally stable probes that remain bright and photostable in complex biological milieus. This peptide coating strategy was successfully tested on several types of core and core-shell quantum dots emitting from the visible (e.g. CdSe/ZnS) to the NIR spectrum range (e.g. CdTe/CdSe/ZnS). By taking advantage of the versatile physico-chemical properties of peptides, a peptide "toolkit" was designed and employed to impart several biological functions to individual quantum dots and control their biochemical activity at the nanometer scale. These biofunctionalized peptide-coated quantum dots were exploited in very diverse biological applications. Near-infrared emitting quantum dot probes were engineered with optimized blood circulation and biodistribution properties for in vivo animal imaging. Visible emitting quantum dots were used for single molecule tracking of raft-associated GPI-anchored proteins in live cells. This last application revealed the presence of discrete and non-caveolar lipid microdomains capable of impeding free lateral diffusions in the plasma membrane of Hela cells. Imaging and tracking of peptide-coated quantum dots provided the first direct evidence that microdomains having the composition and behavior expected for lipid rafts can induce molecular compartmentalization in the membrane of living cells.

  10. Semiconductor Quantum Dot Structures for Integrated Optic Switches

    Science.gov (United States)

    2008-12-23

    quantum boxes. These pillars are extremely fragile at this stage and are set in place by placing a drop of BCB and spinning off the excess. After the... BCB has been cured, the top surface is cleaned off of the BCB using reactive ion etching. Another photolithographic stage is performed to delineate

  11. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    Science.gov (United States)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  12. High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.

    Science.gov (United States)

    Longo, Giulia; La-Placa, Maria-Grazia; Sessolo, Michele; Bolink, Henk J

    2017-10-09

    One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium lead bromide (MAPbBr 3 ) and 9,9spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1), it is possible to achieve photoluminescent quantum yields (PLQYs) as high as 85 %. This is attributed to the dual functions of SPPO1 that limit the grain growth while passivating the perovskite surface. The electroluminescence of these materials was investigated by fabricating multilayer LEDs, where charge injection and transport was found to be severely hindered for the perovskite/SPPO1 material. This was alleviated by partially substituting SPPO1 with a hole-transporting material, 1,3-bis(N-carbazolyl)benzene (mCP), leading to bright electroluminescence. The potential of combining perovskite and organic semiconductors to prepare materials with improved properties opens new avenues for the preparation of simple lightemitting devices using perovskites as the emitter. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Third generation photovoltaics based on multiple exciton generation in quantum confined semiconductors.

    Science.gov (United States)

    Beard, Matthew C; Luther, Joseph M; Semonin, Octavi E; Nozik, Arthur J

    2013-06-18

    Improving the primary photoconversion process in a photovoltaiccell by utilizing the excess energy that is otherwise lost as heat can lead to an increase in the overall power conversion efficiency (PCE). Semiconductor nanocrystals (NCs) with at least one dimension small enough to produce quantum confinement effects provide new ways of controlling energy flow not achievable in thin film or bulk semiconductors. Researchers have developed various strategies to incorporate these novel structures into suitable solar conversion systems. Some of these methods could increase the PCE past the Shockley-Queisser (SQ) limit of ∼33%, making them viable "third generation photovoltaic" (TGPV) cell architectures. Surpassing the SQ limit for single junction solar cells presents both a scientific and a technological challenge, and the use of semiconductor NCs to enhance the primary photoconversion process offers a promising potential solution. The NCs are synthesized via solution phase chemical reactions producing stable colloidal solutions, where the reaction conditions can be modified to produce a variety of shapes, compositions, and structures. The confinement of the semiconductor NC in one dimension produces quantum films, wells, or discs. Two-dimensional confinement leads to quantum wires or rods (QRs), and quantum dots (QDs) are three-dimensionally confined NCs. The process of multiple exciton generation (MEG) converts a high-energy photon into multiple electron-hole pairs. Although many studies have demonstrated that MEG is enhanced in QDs compared with bulk semiconductors, these studies have either used ultrafast spectroscopy to measure the photon-to-exciton quantum yields (QYs) or theoretical calculations. Implementing MEG in a working solar cell has been an ongoing challenge. In this Account, we discuss the status of MEG research and strategies towards implementing MEG in working solar cells. Recently we showed an external quantum efficiency for photocurrent of greater

  14. Layer-by-layer assembly of multicolored semiconductor quantum dots towards efficient blue, green, red and full color optical films

    International Nuclear Information System (INIS)

    Zhang Jun; Li Qian; Di Xiaowei; Liu Zhiliang; Xu Gang

    2008-01-01

    Multicolored semiconductor quantum dots have shown great promise for construction of miniaturized light-emitting diodes with compact size, low weight and cost, and high luminescent efficiency. The unique size-dependent luminescent property of quantum dots offers the feasibility of constructing single-color or full-color output light-emitting diodes with one type of material. In this paper, we have demonstrated the facile fabrication of blue-, green-, red- and full-color-emitting semiconductor quantum dot optical films via a layer-by-layer assembly technique. The optical films were constructed by alternative deposition of different colored quantum dots with a series of oppositely charged species, in particular, the new use of cationic starch on glass substrates. Semiconductor ZnSe quantum dots exhibiting blue emission were deposited for fabrication of blue-emitting optical films, while semiconductor CdTe quantum dots with green and red emission were utilized for construction of green- and red-emitting optical films. The assembly of integrated blue, green and red semiconductor quantum dots resulted in full-color-emitting optical films. The luminescent optical films showed very bright emitting colors under UV irradiation, and displayed dense, smooth and efficient luminous features, showing brighter luminescence in comparison with their corresponding quantum dot aqueous colloid solutions. The assembled optical films provide the prospect of miniaturized light-emitting-diode applications.

  15. Spin dynamics of an individual Cr atom in a semiconductor quantum dot under optical excitation

    Energy Technology Data Exchange (ETDEWEB)

    Lafuente-Sampietro, A. [Université Grenoble Alpes, Institut Néel, F-38000 Grenoble (France); CNRS, Institut Néel, F-38000 Grenoble (France); Institute of Materials Science, University of Tsukuba, 305-8573 Tsukuba (Japan); Utsumi, H.; Kuroda, S. [Institute of Materials Science, University of Tsukuba, 305-8573 Tsukuba (Japan); Boukari, H.; Besombes, L., E-mail: lucien.besombes@grenoble.cnrs.fr [Université Grenoble Alpes, Institut Néel, F-38000 Grenoble (France); CNRS, Institut Néel, F-38000 Grenoble (France)

    2016-08-01

    We studied the spin dynamics of a Cr atom incorporated in a II-VI semiconductor quantum dot using photon correlation techniques. We used recently developed singly Cr-doped CdTe/ZnTe quantum dots to access the spin of an individual magnetic atom. Auto-correlation of the photons emitted by the quantum dot under continuous wave optical excitation reveals fluctuations of the localized spin with a timescale in the 10 ns range. Cross-correlation gives quantitative transfer time between Cr spin states. A calculation of the time dependence of the spin levels population in Cr-doped quantum dots shows that the observed spin dynamics is dominated by the exciton-Cr interaction. These measurements also provide a lower bound in the 20 ns range for the intrinsic Cr spin relaxation time.

  16. Ultrahigh-frequency microwave phase shifts mediated by ultrafast dynamics in quantum-dot semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2010-01-01

    We present a novel scheme to achieve tunable microwave phase shifts at frequencies exceeding 100 GHz based on wavelength conversion induced by high-speed cross-gain modulation in quantum-dot semiconductor optical amplifiers.......We present a novel scheme to achieve tunable microwave phase shifts at frequencies exceeding 100 GHz based on wavelength conversion induced by high-speed cross-gain modulation in quantum-dot semiconductor optical amplifiers....

  17. Tests and Analysis of Electromagnetic Models for Semiconductor-Metal Quantum-Well Lasers

    Science.gov (United States)

    Shih, Meng-Mu

    2012-03-01

    This work tests the proposed electromagnetic models for quantum-well lasers by using several materials of semiconductors and metals. Different combinations of semiconductors and metals can generate various wavelengths and mode-couplings in such semiconductor waveguide structures with built-in metal-gratings. The numerical results of these models are computed by the photonic approach and verified by the optical approach. Even for the weak mode-coupling cases, the numerical results computed by both approaches have close values. Numerical results with post-analysis can summarize how the key parameters, such as grating geometry, well thickness, and layer thickness, affect the mode-couplings. The above results can be further interpreted by physics intuition and fundamental concepts so as to provide insights into the modeling and design of lasers for more applications.

  18. Formation of strain-induced quantum dots in gated semiconductor nanostructures

    Directory of Open Access Journals (Sweden)

    Ted Thorbeck

    2015-08-01

    Full Text Available A long-standing mystery in the field of semiconductor quantum dots (QDs is: Why are there so many unintentional dots (also known as disorder dots which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and predictability of the location of the unintentional QDs suggests there might be additional mechanisms causing the unintentional QDs besides charged defects. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots. We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.

  19. Electron-electron scattering and mobilities in semiconductors and quantum wells

    International Nuclear Information System (INIS)

    Lyo, S.K.

    1986-01-01

    The effect of electron-electron scattering on the mobility in semiconductors and semiconductor quantum wells is examined. A general exact formula is derived for the mobility, when the electron-electron collision rate is much faster than other scattering rates such as those by ionized impurities and phonons. In this limit, the transport relaxation rate is independent of the carrier's energy and contributions to the inverse mobility from individual scattering mechanism add up. The mobility becomes significantly reduced from its value in the absence of electron-electron scattering. When the collision rates are not necessarily dominated by electron-electron scattering, the mobility is calculated by the Kohler-Sondheimer variational method in the presence of ionized-impurity scattering and acoustic-phonon scattering in a nondegenerate two-dimensional quantum well

  20. Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

    Directory of Open Access Journals (Sweden)

    L. Li

    2012-12-01

    Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

  1. Space-charge solitary waves and double layers in n-type compensated semiconductor quantum plasma

    Science.gov (United States)

    Banerjee, S.; Ghosh, B.

    2018-03-01

    Using quantum hydrodynamic (QHD) model and standard reductive perturbation method, we have investigated the formation and characteristics of space-charge solitary waves and double layers in n-type compensated drifting semiconductor plasma with varying doping profiles. Through numerical analysis, it is shown that the structures of space-charge solitary waves and double layers depend significantly on electron drift and compensation parameter which measures a comparative proportion of the donor, acceptor and intrinsic ion concentrations.

  2. Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications

    DEFF Research Database (Denmark)

    Berg, Tommy Winther

    2004-01-01

    respects is comparable to those of fiber amplifiers. The possibility of inverting the optically active states to a large degree is essential in order to achieve this performance. Optical signal processing through cross gain modulation and four wave mixing is modeled and described. For both approaches...... quantum dot amplifiers are found to be able to operate with high efficiency and at high bitrates. Strong spectral hole-burning arising from a relatively slow carrier capture time, is shown to play a dominant role is this context. The results obtained numerically are compared to the properties of bulk...

  3. Second-harmonic scanning optical microscopy of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Vohnsen, B.; Bozhevolnyi, S.I.; Pedersen, K.

    2001-01-01

    Second-harmonic (SH) optical imaging of self-assembled InAlGaAs quantum dots (QD's) grown on a GaAs(0 0 1) substrate has been accomplished at room temperature by use of respectively a scanning far-field optical microscope in reflection mode and a scanning near-field optical microscope...... in transmission mode. In both cases the SH signal peaks at a pump wavelength of similar to 885 nm in correspondence to the maximum in the photoluminescence spectrum of the QD sample. SH near-field optical images exhibit spatial signal variations on a subwavelength scale that depend on the pump wavelength. We...

  4. Ordered Dissipative Structures in Exciton Systems in Semiconductor Quantum Wells

    Directory of Open Access Journals (Sweden)

    Andrey A. Chernyuk

    2006-02-01

    Full Text Available A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical distances from the central excitation spot in coupled quantum wells. The transition between the fragmented and the continuous ring is considered. With assumption of a defect in the structure, a possibility of a localized island of the condensed phase in a fixed position is shown. Exciton density distribution is also analyzed in the case of two spatially separated spots of the laser excitation.

  5. Second-harmonic scanning optical microscopy of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Vohnsen, B.; Bozhevolnyi, S.I.; Pedersen, K.

    2001-01-01

    in transmission mode. In both cases the SH signal peaks at a pump wavelength of similar to 885 nm in correspondence to the maximum in the photoluminescence spectrum of the QD sample. SH near-field optical images exhibit spatial signal variations on a subwavelength scale that depend on the pump wavelength. We......Second-harmonic (SH) optical imaging of self-assembled InAlGaAs quantum dots (QD's) grown on a GaAs(0 0 1) substrate has been accomplished at room temperature by use of respectively a scanning far-field optical microscope in reflection mode and a scanning near-field optical microscope...

  6. Long coherence times in self-assembled semiconductor quantum dots

    DEFF Research Database (Denmark)

    Birkedal, Dan; Leosson, K.; Hvam, Jørn Märcher

    2002-01-01

    We report measurements of ultra-long coherence in self-assembled quantum dots. Transient four-wave mixing experiments at 5 K show an average dephasing time of 372 ps, corresponding to a homogeneous linewidth of 3.5 mueV, which is significantly smaller than the linewidth observed in single-dot...... luminescence. Time-resolved luminescence measurements show a lifetime of the dot ground state of 800 ps demonstrating the presence of pure dephasing at finite temperature. The homogeneous width is lifetime limited only at temperatures approaching 0 K....

  7. Resonance fluorescence and electron spin in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Zhao, Yong

    2009-01-01

    The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)

  8. Resonance fluorescence and electron spin in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yong

    2009-11-18

    The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)

  9. Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

    CERN Document Server

    Yamada, Minoru

    2014-01-01

    This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

  10. Quantum theory of terahertz conductivity of semiconductor nanostructures

    Science.gov (United States)

    Ostatnický, T.; Pushkarev, V.; Němec, H.; Kužel, P.

    2018-02-01

    Efficient and controlled charge carrier transport through nanoelements is currently a primordial question in the research of nanoelectronic materials and structures. We develop a quantum-mechanical theory of the conductivity spectra of confined charge carriers responding to an electric field from dc regime up to optical frequencies. The broken translation symmetry induces a broadband drift-diffusion current, which is not taken into account in the analysis based on Kubo formula and relaxation time approximation. We show that this current is required to ensure that the dc conductivity of isolated nanostructures correctly attains zero. It causes a significant reshaping of the conductivity spectra up to terahertz or multiterahertz spectral ranges, where the electron scattering rate is typically comparable to or larger than the probing frequency.

  11. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

    Directory of Open Access Journals (Sweden)

    Medvid Artur

    2011-01-01

    Full Text Available Abstract On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity.

  12. Optical determination of vacuum Rabi splitting in a semiconductor quantum dot induced by a metal nanoparticle.

    Science.gov (United States)

    He, Yong; Jiang, Cheng; Chen, Bin; Li, Jin-Jin; Zhu, Ka-Di

    2012-07-15

    We propose a theoretical scheme to determine the vacuum Rabi splitting in a single semiconductor quantum dot (SQD) induced by a metal nanoparticle (MNP). Based on cavity quantum electrodynamics, the exciton-plasmon interaction between the SQD and the MNP is considered while a strong pump laser and a weak probe laser are simultaneously presented. By decreasing the distance between them, we can increase the coupling strength. At resonance, thanks to the strong coupling, a vacuum Rabi splitting can be observed clearly in the probe absorption spectrum. The coupling strength can be obtained by measuring the vacuum Rabi splitting. This strong coupling is significant for the investigation of surface-plasmon-based quantum information processing.

  13. Phonon induced pure dephasing process of excitonic state in colloidal semiconductor quantum dots

    Science.gov (United States)

    Huang, Tongyun; Han, Peng; Wang, Xinke; Feng, Shengfei; Sun, Wenfeng; Ye, Jiasheng; Zhang, Yan

    2016-04-01

    We present a theoretical study on the pure dephasing process of colloidal semiconductor quantum dots induced by lattice vibrations using continuum model calculations. By solving the time dependent Liouville-von Neumann equation, we present the ultrafast Rabi oscillations between excitonic state and virtual state via exciton-phonon interaction and obtain the pure dephasing time from the fast decayed envelope of the Rabi oscillations. The interaction between exciton and longitudinal optical phonon vibration is found to dominate the pure dephasing process and the dephasing time increases nonlinearly with the reduction of exciton-phonon coupling strength. We further find that the pure dephasing time of large quantum dots is more sensitive to temperature than small quantum dots.

  14. Intrinsic normal Zeeman effect for spin plasmons in semiconductor quantum wells

    Science.gov (United States)

    Ullrich, C. A.; D'Amico, I.; Baboux, F.; Perez, F.

    2013-09-01

    The normal Zeeman effect gives rise to a three-fold splitting of atomic spectral lines in the presence of strong external magnetic fields. In n-doped semiconductor quantum wells, a similar three-fold splitting occurs in the intersubband spin plasmon resonance, as was recently demonstrated experimentally using inelastic light scattering. The plasmon splitting is caused by the interplay of intrinsic spin-orbit crystal magnetic fields and dynamical many-body effects. We show that it can be regarded as an intrinsic normal Zeeman effect in quantum wells. We present a formal framework for calculating the quantum well electronic states and their collective linear response in the presence of Rashba and Dresselhaus spin-orbit coupling, and we show how the intrinsic normal Zeeman effect of the spin plasmons can be controlled by external magnetic fields.

  15. Electron–hole two-stream instability in a quantum semiconductor plasma with exchange-correlation effects

    International Nuclear Information System (INIS)

    Zeba, I.; Yahia, M.E.; Shukla, P.K.; Moslem, W.M.

    2012-01-01

    The electron–hole two-stream instability in a quantum semiconductor plasma has been studied including electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures of the plasma species. Typical values of GaAs and GaSb semiconductors are used to estimate the growth rate of the two-stream instability. The effects of electron– and hole–phonon collision, quantum recoil effects, the streaming velocities, and the corresponding threshold on the growth rate are investigated numerically. Considering the phonon susceptibility allows the acoustic mode to exist and the collisional instability arises in combination with drift of the holes. -- Highlights: ► Electron–hole two stream instability in quantum plasmas is presented. ► Typical values of GaAs and GaSb semiconductors are used to estimate the growth rate. ► The streaming velocities and the corresponding threshold on the growth rate are investigated numerically.

  16. Emergence of the persistent spin helix in semiconductor quantum wells

    International Nuclear Information System (INIS)

    Koralek, Jake; Weber, Chris; Orenstein, Joe; Bernevig, Andrei; Zhang, Shoucheng; Mack, Shawn; Awschalom, David

    2008-01-01

    According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH) .2 SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba (alpha) and linear Dresselhaus (beta 1), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (beta 3) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as alpha approaches beta 1. Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning alpha and beta 1. Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying beta 3 as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics

  17. Emergence of the Persistent Spin Helix in Semiconductor Quantum Wells

    International Nuclear Information System (INIS)

    Koralek, Jake

    2011-01-01

    According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH). SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba (α) and linear Dresselhaus (β 1 ), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (β 3 ) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as α → β 1 . Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning α and β 1 . Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying β 3 as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics.

  18. Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells

    Science.gov (United States)

    Ganichev, S. D.

    The spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electric current drives a transverse spin current and causes a nonequilibrium spin accumulation near the sample boundary,1,2 the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current3,4 or the reverse process, in which an electrical current generates a non-equilibrium spin-polarization,5-9 are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. Then spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by spin splitting of the band structure (intrinsic spin Hall effect). Recently an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect has been observed.10 In contrast to the spin Hall effect it does not require an electric current to flow: it is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. It is show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium temperature up to room temperature. Moreover the experimental results demonstrate that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of non-equilibrium carriers. In order to demonstrate the existence of the spin separation due to asymmetric scattering the pure spin current was converted into an electric current. It is achieved by application of a magnetic field which polarizes spins. This is analogues to spin-dependent scattering in transport experiments: spin-dependent scattering in an unpolarized electron gas causes the extrinsic spin Hall effect, whereas in a spin-polarized electron

  19. Quantum confinement in semiconductor nanofilms: Optical spectra and multiple exciton generation

    Science.gov (United States)

    Khmelinskii, Igor; Makarov, Vladimir I.

    2016-04-01

    We report optical absorption and photoluminescence (PL) spectra of Si and SnO2 nanocrystalline films in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement, observed in the optical spectra of nanofilms for the first time ever. The film thickness ranged from 3.9 to 12.2 nm, depending on the material. The results are interpreted within the particle-in-a-box model, with infinite walls. The calculated values of the effective electron mass are independent on the film thickness and equal to 0.17mo (Si) and 0.21mo (SnO2), with mo the mass of the free electron. The second calculated model parameter, the quantum number n of the HOMO (valence band), was also thickness-independent: 8.00 (Si) and 7.00 (SnO2). The transitions observed in absorption all start at the level n and correspond to Δn = 1, 2, 3, …. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with increased excitation energy. In effect, nanolayers of Si, an indirect-gap semiconductor, behave as a direct-gap semiconductor, as regards the transverse-quantized level system. A prototype Si-SnO2 nanofilm photovoltaic cell demonstrated photoelectron quantum yields achieving 2.5, showing clear evidence of multiple exciton generation, for the first time ever in a working nanofilm device.

  20. Comparative examination of the stability of semiconductor quantum dots in various biochemical buffers.

    Science.gov (United States)

    Boldt, Klaus; Bruns, Oliver T; Gaponik, Nikolai; Eychmüller, Alexander

    2006-02-09

    Due to their greater photostability compared to established organic fluorescence markers, semiconductor quantum dots provide an attractive alternative for the biolabeling of living cells. On the basis of a comparative investigation using differently sized thiol-stabilized CdTe nanocrystals in a variety of commonly used biological buffers, a method is developed to quantify the stability of such a multicomponent system. Above a certain critical size, the intensity of the photoluminescence of the nanocrystals is found to diminish with pseudo-zero-order kinetics, whereas for specific combinations of particle size, ligand, and buffer there appears to be no decay below this critical particle size, pointing out the necessity for thorough investigations of this kind in the view of prospect applications of semiconductor nanocrystals in the area of biolabeling.

  1. Critical strain region evaluation of self-assembled semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sales, D L [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain); Pizarro, J [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real, Cadiz (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real, Cadiz (Spain); Garcia, R [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain); Trevisi, G [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Frigeri, P [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Nasi, L [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Franchi, S [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Molina, S I [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain)

    2007-11-28

    A novel peak finding method to map the strain from high resolution transmission electron micrographs, known as the Peak Pairs method, has been applied to In(Ga)As/AlGaAs quantum dot (QD) samples, which present stacking faults emerging from the QD edges. Moreover, strain distribution has been simulated by the finite element method applying the elastic theory on a 3D QD model. The agreement existing between determined and simulated strain values reveals that these techniques are consistent enough to qualitatively characterize the strain distribution of nanostructured materials. The correct application of both methods allows the localization of critical strain zones in semiconductor QDs, predicting the nucleation of defects, and being a very useful tool for the design of semiconductor devices.

  2. Toxicological studies of semiconductor quantum dots on immune cells.

    Energy Technology Data Exchange (ETDEWEB)

    Ricken, James Bryce; Rios, Lynette; Poschet, Jens Fredrich; Bachand, Marlene; Bachand, George David; Greene, Adrienne Celeste; Carroll-Portillo, Amanda

    2008-11-01

    Nanoengineered materials hold a vast promise of enabling revolutionary technologies, but also pose an emerging and potentially serious threat to human and environmental health. While there is increasing knowledge concerning the risks posed by engineered nanomaterials, significant inconsistencies exist within the current data based on the high degree of variability in the materials (e.g., synthesis method, coatings, etc) and biological test systems (e.g., cell lines, whole organism, etc). In this project, we evaluated the uptake and response of two immune cell lines (RAW macrophage and RBL mast cells) to nanocrystal quantum dots (Qdots) with different sizes and surface chemistries, and at different concentrations. The basic experimental design followed a 2 x 2 x 3 factorial model: two Qdot sizes (Qdot 520 and 620), two surface chemistries (amine 'NH{sub 2}' and carboxylic acid 'COOH'), and three concentrations (0, 1 nM, and 1 {micro}M). Based on this design, the following Qdots from Evident Technologies were used for all experiments: Qdot 520-COOH, Qdot 520-NH{sub 2}, Qdot 620-COOH, and Qdot 620-NH{sub 2}. Fluorescence and confocal imaging demonstrated that Qdot 620-COOH and Qdot 620-NH{sub 2} nanoparticles had a greater level of internalization and cell membrane association in RAW and RBL cells, respectively. From these data, a two-way interaction between Qdot size and concentration was observed in relation to the level of cellular uptake in RAW cells, and association with RBL cell membranes. Toxicity of both RBL and RAW cells was also significantly dependent on the interaction of Qdot size and concentration; the 1 {micro}M concentrations of the larger, Qdot 620 nanoparticles induced a greater toxic effect on both cell lines. The RBL data also demonstrate that Qdot exposure can induce significant toxicity independent of cellular uptake. A significant increase in TNF-{alpha} and decrease in IL-10 release was observed in RAW cells, and suggested

  3. Optical control of the spin of a magnetic atom in a semiconductor quantum dot

    Directory of Open Access Journals (Sweden)

    Besombes L.

    2015-04-01

    Full Text Available The control of single spins in solids is a key but challenging step for any spin-based solid-state quantumcomputing device. Thanks to their expected long coherence time, localized spins on magnetic atoms in a semiconductor host could be an interesting media to store quantum information in the solid state. Optical probing and control of the spin of individual or pairs of Manganese (Mn atoms (S = 5/2 have been obtained in II-VI and IIIV semiconductor quantum dots during the last years. In this paper, we review recently developed optical control experiments of the spin of an individual Mn atoms in II-VI semiconductor self-assembled or strain-free quantum dots (QDs.We first show that the fine structure of the Mn atom and especially a strained induced magnetic anisotropy is the main parameter controlling the spin memory of the magnetic atom at zero magnetic field. We then demonstrate that the energy of any spin state of a Mn atom or pairs of Mn atom can be independently tuned by using the optical Stark effect induced by a resonant laser field. The strong coupling with the resonant laser field modifies the Mn fine structure and consequently its dynamics.We then describe the spin dynamics of a Mn atom under this strong resonant optical excitation. In addition to standard optical pumping expected for a resonant excitation, we show that the Mn spin population can be trapped in the state which is resonantly excited. This effect is modeled considering the coherent spin dynamics of the coupled electronic and nuclear spin of the Mn atom optically dressed by a resonant laser field. Finally, we discuss the spin dynamics of a Mn atom in strain-free QDs and show that these structures should permit a fast optical coherent control of an individual Mn spin.

  4. Large and tunable negative refractive index via electromagnetically induced chirality in a semiconductor quantum well nanostructure

    Science.gov (United States)

    Zhao, Sh.-C.; Zhang, Sh.-Y.; Xu, Y.-Y.

    2014-11-01

    Large and tunable negative refractive index (NRI) via electromagnetically induced chirality is demonstrated in a semiconductor quantum wells (SQWs) nanostructure by using the reported experimental parameters in J.F. Dynes et al., Phys. Rev. Lett. 94, 157403 (2005). It is found: the large and controllable NRI with alterable frequency regions is obtained when the coupling laser field and the relative phase are modulated, which will increase the flexibility and possibility of implementing NRI in the SQWs nanostructure. The scheme rooted in the experimental results may lead a new avenue to NRI material in solid-state nanostructure.

  5. Theory of Pulse Train Amplification Without Patterning Effects in Quantum Dot Semiconductor Optical Amplifiers

    DEFF Research Database (Denmark)

    Uskov, Alexander V.; Berg, Tommy Winther; Mørk, Jesper

    2004-01-01

    A theory for pulse amplification and saturation in quantum dot (QD) semiconductor optical amplifiers (SOAs) is developed. In particular, the maximum bit rate at which a data stream of pulses can be amplified without significant patterning effects is investigated. Simple expressions are derived th...... energies of 0.2–0.4 pJ. The superiority of QD SOAs is based on: 1) the faster achievement of the regime of maximum gain in QD SOAs compared to QW and bulk SOAs and 2) the lower effective cross section of photon-carrier interaction in QDs....

  6. Quantum Wells, Wires and Dots Theoretical and Computational Physics of Semiconductor Nanostructures

    CERN Document Server

    Harrison, Paul

    2011-01-01

    Quantum Wells, Wires and Dots, 3rd Edition is aimed at providing all the essential information, both theoretical and computational, in order that the reader can, starting from essentially nothing, understand how the electronic, optical and transport properties of semiconductor heterostructures are calculated. Completely revised and updated, this text is designed to lead the reader through a series of simple theoretical and computational implementations, and slowly build from solid foundations, to a level where the reader can begin to initiate theoretical investigations or explanations of their

  7. Density functional theory in quantum chemistry

    CERN Document Server

    Tsuneda, Takao

    2014-01-01

    This book examines density functional theory based on the foundation of quantum chemistry. Unconventional in approach, it reviews basic concepts, then describes the physical meanings of state-of-the-art exchange-correlation functionals and their corrections.

  8. Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

    International Nuclear Information System (INIS)

    Schwager, Heike

    2012-01-01

    In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

  9. Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

    Energy Technology Data Exchange (ETDEWEB)

    Schwager, Heike

    2012-07-04

    In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

  10. Temperature-Dependent Optical Properties of PbS/CdS Core/Shell Quantum Dot Thin Films : Probing the Wave Function Delocalization

    NARCIS (Netherlands)

    Fang, Honghua; Balazs, Daniel M.; Protesescu, Loredana; Kovalenko, Maksym V.; Loi, Maria Antonietta

    2015-01-01

    Colloidal semiconductor quantum dots (QDs) are extraordinarily appealing for the development of cheap and large area solar cells due to high absorption efficiency; tunable bandgap energies; and solution processability. Understanding:and controlling electronic wave function delocalitation in QD thin

  11. Quantum algorithms for testing Boolean functions

    Directory of Open Access Journals (Sweden)

    Erika Andersson

    2010-06-01

    Full Text Available We discuss quantum algorithms, based on the Bernstein-Vazirani algorithm, for finding which variables a Boolean function depends on. There are 2^n possible linear Boolean functions of n variables; given a linear Boolean function, the Bernstein-Vazirani quantum algorithm can deterministically identify which one of these Boolean functions we are given using just one single function query. The same quantum algorithm can also be used to learn which input variables other types of Boolean functions depend on, with a success probability that depends on the form of the Boolean function that is tested, but does not depend on the total number of input variables. We also outline a procedure to futher amplify the success probability, based on another quantum algorithm, the Grover search.

  12. InGaAs Quantum Dots on Cross-Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

    Directory of Open Access Journals (Sweden)

    Teeravat Limwongse

    2013-01-01

    Full Text Available Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs can be grown using semiconductor as a host and magnetic constituents added to give them magnetic properties. Our results show how molecular beam epitaxy and, particularly, lattice-mismatched heteroepitaxy can be used to form laterally aligned, high-density semiconducting host in a single growth run without any use of lithography or etching. Representative results of how semiconductor QD hosts arrange themselves on various stripes and cross-hatch patterns are reported.

  13. The Influence of Surface Chemistry on the Optoelectronic Properties of Semiconductor Quantum Dots

    Science.gov (United States)

    Harris, Rachel Dory

    This dissertation describes the relationship between the surface chemistry of colloidal semiconductor nanocrystals (quantum dots, QDs) and their optoelectronic properties, such as photoluminescence and degree of quantum confinement. We primarily focus our efforts on one particular subset of ligands known to couple strongly to the inorganic core of the QD to decrease its quantum confinement, phenyldithiocarbamates (PTCs). We focus first on the development of quantitative Nuclear Magnetic Resonance (NMR) techniques to characterize the identity and quantity of ligands (such as PTCs and oleic acid) bound to nanocrystal surfaces. When we correlate the surface chemistry information obtained from NMR with the optical spectra of our QDs, we find that for strongly-delocalizing ligands like PTC, the spatial distribution of ligands on the QD surface affects the overall degree of delocalization. In the later chapters of this thesis, we describe two avenues for exploiting the relationship between surface coverage of exciton-delocalizing ligands and quantum confinement to design strongly coupled, hierarchical nanomaterials for efficient charge transport in films or in solution. We explore the treatment of thin lead sulfide QD films with a PTC derivative to improve their overall conductivity relative to benzoic acid, a similar molecule that does not affect confinement. Finally, we describe a potential strategy to improve the yield and rate of hole transfer to a tethered phthalocyanine molecule using dithiocarbamate and thiolate linkers.

  14. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

    Science.gov (United States)

    Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

    2018-01-01

    We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

  15. Optical Design of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers for Communication Systems

    Directory of Open Access Journals (Sweden)

    Faten A. Chaqmaqchee

    2016-04-01

    Full Text Available III-V semiconductors components such as Gallium Arsenic (GaAs, Indium Antimony (InSb, Aluminum Arsenic (AlAs and Indium Arsenic (InAs have high carrier mobilities and direct energy gaps. This is making them indispensable for today’s optoelectronic devices such as semiconductor lasers and optical amplifiers at 1.3 μm wavelength operation. In fact, these elements are led to the invention of the Gallium Indium Nitride Arsenic (GaInNAs, where the lattice is matched to GaAs for such applications. This article is aimed to design dilute nitride GaInNAs quantum wells (QWs enclosed between top and bottom of Aluminum (Gallium Arsenic Al(GaAs distributed bragg mirrors (DBRs using MATLAB® program. Vertical cavity semiconductor optical amplifiers (VCSOAs structures are based on Fabry Perot (FP method to design optical gain and bandwidth gain to be operated in reflection and transmission modes. The optical model gives access to the contact layer of epitaxial structure and the reflectivity for successive radiative modes, their lasing thresholds, emission wavelengths and optical field distributions in the laser cavity.

  16. Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

    Science.gov (United States)

    Narang, Prineha

    This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

  17. Infrared studies of impurity states and ultrafast carrier dynamics in semiconductor quantum structures

    Energy Technology Data Exchange (ETDEWEB)

    Stehr, D.

    2007-12-28

    This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2p{sub z} confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 {mu}m and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. By varying the carrier

  18. Femtosecond spectroscopy in semiconductors: a key to coherences, correlations and quantum kinetics

    International Nuclear Information System (INIS)

    Axt, V M; Kuhn, T

    2004-01-01

    The application of femtosecond spectroscopy to the study of ultrafast dynamics in semiconductor materials and nanostructures is reviewed with particular emphasis on the physics that can be learned from it. Excitation with ultrashort optical pulses in general results in the creation of coherent superpositions and correlated many-particle states. The review comprises a discussion of the dynamics of this correlated many-body system during and after pulsed excitation as well as its analysis by means of refined measurements and advanced theories. After an introduction of basic concepts-such as coherence, correlation and quantum kinetics-a brief overview of the most important experimental techniques and theoretical approaches is given. The remainder of this paper is devoted to specific results selected in order to highlight how femtosecond spectroscopy gives access to the physics of coherences, correlations and quantum kinetics involving charge, spin and lattice degrees of freedom. First examples deal with the dynamics of basic laser-induced coherences that can be observed, e.g. in quantum beat spectroscopy, in coherent control measurements or in experiments using few-cycle pulses. The phenomena discussed here are basic in the sense that they can be understood to a large extent on the mean-field level of the theory. Nevertheless, already on this level it is found that semiconductors behave substantially differently from atomic systems. Subsequent sections report on the occurrence of coherences and correlations beyond the mean-field level that are mediated either by carrier-phonon or carrier-carrier interactions. The corresponding analysis gives deep insight into fundamental issues such as the energy-time uncertainty, pure dephasing in quantum dot structures, the role of two-pair or even higher correlations and the build-up of screening. Finally results are presented concerning the ultrafast dynamics of resonantly coupled excitations, where a combination of different

  19. Theta vectors and quantum theta functions

    International Nuclear Information System (INIS)

    Chang-Young, Ee; Kim, Hoil

    2005-01-01

    In this paper, we clarify the relation between Manin's quantum theta function and Schwarz's theta vector. We do this in comparison with the relation between the kq representation, which is equivalent to the classical theta function, and the corresponding coordinate space wavefunction. We first explain the equivalence relation between the classical theta function and the kq representation in which the translation operators of the phase space are commuting. When the translation operators of the phase space are not commuting, then the kq representation is no longer meaningful. We explain why Manin's quantum theta function, obtained via algebra (quantum torus) valued inner product of the theta vector, is a natural choice for the quantum version of the classical theta function. We then show that this approach holds for a more general theta vector containing an extra linear term in the exponent obtained from a holomorphic connection of constant curvature than the simple Gaussian one used in Manin's construction

  20. Strain effects on the work function of an organic semiconductor

    KAUST Repository

    Wu, Yanfei

    2016-02-01

    Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ~0.05% tensile strain along the rubrene π-stacking direction. The results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials.

  1. A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

    Science.gov (United States)

    Song, Xiang-Xiang; Liu, Di; Mosallanejad, Vahid; You, Jie; Han, Tian-Yi; Chen, Dian-Teng; Li, Hai-Ou; Cao, Gang; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping

    2015-10-01

    Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Herein, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, therefore eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on a way to obtain smaller quantum dots on TMDCs with the same top gate geometry compared to traditional GaAs/AlGaAs heterostructures with further research.

  2. Relaxation of a kinetic hole due to carrier-carrier scattering in multisubband single-quantum-well semiconductors

    DEFF Research Database (Denmark)

    Dery, H.; Tromborg, Bjarne; Eisenstein, G.

    2003-01-01

    We describe a theoretical model for carrier-carrier scattering in an inverted semiconductor quantum well structure using a multisubband diagram. The model includes all possible nonvanishing interaction terms within the static screening approximation, and it enables one to calculate accurately...

  3. Statistical analysis of time-resolved emission from ensembles of semiconductor quantum dots: interpretations of exponantial decay models

    NARCIS (Netherlands)

    van Driel, A.F.; Nikolaev, I.; Vergeer, P.; Lodahl, P.; Vanmaekelbergh, D.; Vos, Willem L.

    2007-01-01

    We present a statistical analysis of time-resolved spontaneous emission decay curves from ensembles of emitters, such as semiconductor quantum dots, with the aim of interpreting ubiquitous non-single-exponential decay. Contrary to what is widely assumed, the density of excited emitters and the

  4. Fundamentals and Applications of Semiconductor Nanocrystals : A study on the synthesis, optical properties, and interactions of quantum dots

    NARCIS (Netherlands)

    Koole, R.

    2008-01-01

    This thesis focuses on both the fundamental aspects as well as applications of colloidal semiconductor nanocrystals, also called quantum dots (QDs). Due to the unique size-dependent optical and electronic properties of QDs, they hold great promise for a wide range of applications like solar cells,

  5. Differential-phase-shift quantum key distribution experiment using fast physical random bit generator with chaotic semiconductor lasers.

    Science.gov (United States)

    Honjo, Toshimori; Uchida, Atsushi; Amano, Kazuya; Hirano, Kunihito; Someya, Hiroyuki; Okumura, Haruka; Yoshimura, Kazuyuki; Davis, Peter; Tokura, Yasuhiro

    2009-05-25

    A high speed physical random bit generator is applied for the first time to a gigahertz clocked quantum key distribution system. Random phase-modulation in a differential-phase-shift quantum key distribution (DPS-QKD) system is performed using a 1-Gbps random bit signal which is generated by a physical random bit generator with chaotic semiconductor lasers. Stable operation is demonstrated for over one hour, and sifted keys are successfully generated at a rate of 9.0 kbps with a quantum bit error rate of 3.2% after 25-km fiber transmission.

  6. Spin Manipulation through geometric phase in III-V semiconductor quantum dots

    Science.gov (United States)

    Prbahakar, Sanjay; Melnik, Roderick

    2015-03-01

    A more robust technique is proposed to flip the spin completely through geometric phase in III-V semiconductor quantum dots (QDs). We transport the QDs adiabatically in a closed loop along the circular trajectory in the plane of two dimensional electron gas with the application of time dependent gate controlled electric fields and investigate the manipulation of Berry phase with the spin-orbit couplings. Here we show that both the Rashba and the Dresselhaus couplings are present for inducing a phase necessary for spin flip. If one of them is absent, the induced phase is trivial and irrelevant for spin-flip (Phys. Rev. B 89, 245310 (2014), Applied Physics Letters 104, 142411 (2014)). We acknowledge the funding agency: Natural Sciences and Engineering Research Council of Canada and Canada Research Chair Program.

  7. Coherent manipulation of spontaneous emission spectra in coupled semiconductor quantum well structures.

    Science.gov (United States)

    Chen, Aixi

    2014-11-03

    In triple coupled semiconductor quantum well structures (SQWs) interacting with a coherent driving filed, a coherent coupling field and a weak probe field, spontaneous emission spectra are investigated. Our studies show emission spectra can easily be manipulated through changing the intensity of the driving and coupling field, detuning of the driving field. Some interesting physical phenomena such as spectral-line enhancement/suppression, spectral-line narrowing and spontaneous emission quenching may be obtained in our system. The theoretical studies of spontaneous emission spectra in SQWS have potential application in high-precision spectroscopy. Our studies are based on the real physical system [Appl. Phys. Lett.86(20), 201112 (2005)], and this scheme might be realizable with presently available techniques.

  8. Plasmon-enhanced second harmonic generation in semiconductor quantum dots close to metal nanoparticles

    Directory of Open Access Journals (Sweden)

    Andrea V. Bragas

    2011-03-01

    Full Text Available We report the enhancement of the optical second harmonic signal in non-centrosymmetric semiconductor CdS quantum dots, when they are placed in close contact with isolated silver nanoparticles. The intensity enhancement is about 1000. We also show that the enhancement increases when the incoming laser frequency $omega$ is tuned toward the spectral position of the silver plasmon at $2omega$, proving that the silver nanoparticle modifies the nonlinear emission.Received: 8 March 2011, Accepted: 30 May 2011; Edited by: L. Viña; Reviewed by: R. Gordon, Department of Electrical and Computer Engineering, University of Victoria, British Columbia, Canada; DOI: 10.4279/PIP.030002Cite as: P. M. Jais, C. von Bilderling, A. V. Bragas, Papers in Physics 3, 030002 (2011

  9. Control of electromagnetically induced transparency via a hybrid semiconductor quantum dot-vanadium dioxide nanoparticle system

    Science.gov (United States)

    Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza

    2017-07-01

    We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton-polariton and exciton-plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.

  10. Acousto-optic modulation of III-V semiconductor multiple quantum wells

    International Nuclear Information System (INIS)

    Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

    1996-01-01

    We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

  11. Binding of two-electron metastable states in semiconductor quantum dots under a magnetic field

    Science.gov (United States)

    Garagiola, Mariano; Pont, Federico M.; Osenda, Omar

    2018-04-01

    Applying a strong enough magnetic field results in the binding of few-electron resonant states. The mechanism was proposed many years ago but its verification in laboratory conditions is far more recent. In this work we study the binding of two-electron resonant states. The electrons are confined in a cylindrical quantum dot which is embedded in a semiconductor wire. The geometry considered is similar to the one used in actual experimental setups. The low-energy two-electron spectrum is calculated numerically from an effective-mass approximation Hamiltonian modelling the system. Methods for binding threshold calculations in systems with one and two electrons are thoroughly studied; in particular, we use quantum information quantities to assess when the strong lateral confinement approximation can be used to obtain reliable low-energy spectra. For simplicity, only cases without bound states in the absence of an external field are considered. Under these conditions, the binding threshold for the one-electron case is given by the lowest Landau energy level. Moreover, the energy of the one-electron bounded resonance can be used to obtain the two-electron binding threshold. It is shown that for realistic values of the two-electron model parameters it is feasible to bind resonances with field strengths of a few tens of tesla.

  12. Optical response of hybrid semiconductor quantum dot-metal nanoparticle system: Beyond the dipole approximation

    Science.gov (United States)

    Mohammadzadeh, Atefeh; Miri, MirFaez

    2018-01-01

    We study the response of a semiconductor quantum dot-metal nanoparticle system to an external field E 0 cos ( ω t ) . The borders between Fano, double peaks, weak transition, strong transition, and bistability regions of the phase diagram move considerably as one regards the multipole effects. The exciton-induced transparency is an artifact of the dipole approximation. The absorption of the nanoparticle, the population inversion of the quantum dot, the upper and lower limits of intensity where bistability occurs, the characteristic time to reach the steady state, and other features of the hybrid system change due to the multipole effects. The phase diagrams corresponding to the fields parallel and perpendicular to the axis of system are quite distinguishable. Thus, both the intensity and the polarization of the incident field can be used to control the system. In particular, the incident polarization can be used to switch on and switch off the bistable behavior. For applications such as miniaturized bistable devices and nanosensors sensitive to variations of the dielectric constant of the surrounding medium, multipole effects must be considered.

  13. Silver Nanoshell Plasmonically Controlled Emission of Semiconductor Quantum Dots in the Strong Coupling Regime.

    Science.gov (United States)

    Zhou, Ning; Yuan, Meng; Gao, Yuhan; Li, Dongsheng; Yang, Deren

    2016-04-26

    Strong coupling between semiconductor excitons and localized surface plasmons (LSPs) giving rise to hybridized plexciton states in which energy is coherently and reversibly exchanged between the components is vital, especially in the area of quantum information processing from fundamental and practical points of view. Here, in photoluminescence spectra, rather than from common extinction or reflection measurements, we report on the direct observation of Rabi splitting of approximately 160 meV as an indication of strong coupling between excited states of CdSe/ZnS quantum dots (QDs) and LSP modes of silver nanoshells under nonresonant nanosecond pulsed laser excitation at room temperature. The strong coupling manifests itself as an anticrossing-like behavior of the two newly formed polaritons when tuning the silver nanoshell plasmon energies across the exciton line of the QDs. Further analysis substantiates the essentiality of high pump energy and collective strong coupling of many QDs with the radiative dipole mode of the metallic nanoparticles for the realization of strong coupling. Our finding opens up interesting directions for the investigation of strong coupling between LSPs and excitons from the perspective of radiative recombination under easily accessible experimental conditions.

  14. Functional integration and quantum physics

    CERN Document Server

    Simon, Barry

    2004-01-01

    The main theme of this book is the "path integral technique" and its applications to constructive methods of quantum physics. The central topic is probabilistic foundations of the Feynman-Kac formula. Starting with the main examples of Gaussian processes (the Brownian motion, the oscillatory process, and the Brownian bridge), the author presents four different proofs of the Feynman-Kac formula. Also included is a simple exposition of stochastic Itô calculus and its applications, in particular to the Hamiltonian of a particle in a magnetic field (the Feynman-Kac-Itô formula). Among other topics

  15. Quantifying the cellular uptake of semiconductor quantum dot nanoparticles by analytical electron microscopy.

    Science.gov (United States)

    Hondow, Nicole; Brown, M Rowan; Starborg, Tobias; Monteith, Alexander G; Brydson, Rik; Summers, Huw D; Rees, Paul; Brown, Andy

    2016-02-01

    Semiconductor quantum dot nanoparticles are in demand as optical biomarkers yet the cellular uptake process is not fully understood; quantification of numbers and the fate of internalized particles are still to be achieved. We have focussed on the characterization of cellular uptake of quantum dots using a combination of analytical electron microscopies because of the spatial resolution available to examine uptake at the nanoparticle level, using both imaging to locate particles and spectroscopy to confirm identity. In this study, commercially available quantum dots, CdSe/ZnS core/shell particles coated in peptides to target cellular uptake by endocytosis, have been investigated in terms of the agglomeration state in typical cell culture media, the traverse of particle agglomerates across U-2 OS cell membranes during endocytosis, the merging of endosomal vesicles during incubation of cells and in the correlation of imaging flow cytometry and transmission electron microscopy to measure the final nanoparticle dose internalized by the U-2 OS cells. We show that a combination of analytical transmission electron microscopy and serial block face scanning electron microscopy can provide a comprehensive description of the internalization of an initial exposure dose of nanoparticles by an endocytically active cell population and how the internalized, membrane bound nanoparticle load is processed by the cells. We present a stochastic model of an endosome merging process and show that this provides a data-driven modelling framework for the prediction of cellular uptake of engineered nanoparticles in general. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

  16. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    International Nuclear Information System (INIS)

    Daqiq, Reza; Ghobadi, Nader

    2016-01-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  17. Polyacrylamide gel electrophoresis of semiconductor quantum dots and their bioconjugates: materials characterization and physical insights from spectrofluorimetric detection.

    Science.gov (United States)

    Kim, Hyungki; Jeen, Tiffany; Tran, Michael V; Algar, W Russ

    2018-02-26

    Colloidal semiconductor quantum dot (QD) nanocrystals have ideal fluorescence properties for bioanalysis and bioimaging, but these materials must be functionalized with an inorganic shell, organic ligand or polymer coating, and conjugated with biomolecules to be useful in such applications. Several different analytical techniques are used to characterize QDs and their multiple layers of functionalization. Here, we revisit poly(acrylamide) gel electrophoresis (PAGE), which has been scarcely used for the characterization of QDs and their bioconjugates in deference to the routine use of agarose gel electrophoresis. We implemented PAGE in a novel "stubby" capillary format with spectrofluorimetric detection, the combination of which enabled more rapid and more detailed characterization of QDs than was possible with both poly(acrylamide) and agarose slab gels. Correlations between the peak photoluminescence (PL) emission wavelength and electropherogram peaks, especially when combined with Ferguson analysis, provided new and significant insight into the key factors that determine the electrophoretic mobility of QDs, and helped to resolve heterogeneity and sub-populations in ensembles of QDs. The method was useful for characterization of the inorganic core/shell nanocrystals, their organic ligand and polymer coatings, and their final bioconjugates, the latter of which were in the form of peptide and protein conjugates. With further development and optimization, we anticipate that capillary PAGE with spectrofluorimetric detection will become a valuable addition to the toolbox of characterization techniques suitable for QDs, their bioconjugates, and other nanoparticle materials as well.

  18. Antisites in III-V semiconductors: Density functional theory calculations

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alex.chroneos@open.ac.uk [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Tahini, H. A. [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia); Schwingenschlögl, U., E-mail: udo.schwingenschlogl@kaust.edu.sa [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia); Grimes, R. W., E-mail: r.grimes@imperial.ac.uk [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III{sub V}{sup q}) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V{sub III}{sup q}) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III{sub V}{sup q} defects dominate under III-rich conditions and V{sub III}{sup q} under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies.

  19. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III=Al, Ga, and In and V=P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies. © 2014 AIP Publishing LLC.

  20. Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

    Directory of Open Access Journals (Sweden)

    Zhiquan Yuan

    2017-08-01

    Full Text Available Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs and black phosphorous (BP, have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.

  1. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  2. Semiconductor quantum wells with BenDaniel–Duke boundary conditions: approximate analytical results

    International Nuclear Information System (INIS)

    Barsan, Victor; Ciornei, Mihaela-Cristina

    2017-01-01

    The Schrödinger equation for a particle moving in a square well potential with BenDaniel–Duke boundary conditions is solved. Using algebraic approximations for trigonometric functions, the transcendental equations of the bound states energy are transformed into tractable, algebraic equations. For the ground state and the first excited state, they are cubic equations; we obtain simple formulas for their physically interesting roots. The case of higher excited states is also analysed. Our results have direct applications in the physics of type I and type II semiconductor heterostructures. (paper)

  3. Semiconductor quantum wells with BenDaniel-Duke boundary conditions: approximate analytical results

    Science.gov (United States)

    Barsan, Victor; Ciornei, Mihaela-Cristina

    2017-01-01

    The Schrödinger equation for a particle moving in a square well potential with BenDaniel-Duke boundary conditions is solved. Using algebraic approximations for trigonometric functions, the transcendental equations of the bound states energy are transformed into tractable, algebraic equations. For the ground state and the first excited state, they are cubic equations; we obtain simple formulas for their physically interesting roots. The case of higher excited states is also analysed. Our results have direct applications in the physics of type I and type II semiconductor heterostructures.

  4. Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Akhavan, Nima Dehdashti; Afzalian, Aryan; Lee, Chi-Woo; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; Yu, Ran; Fagas, Giorgos; Colinge, Jean-Pierre

    2010-08-01

    In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum transport and on the electrical characteristics of multigate silicon nanowire metal-oxide-semiconductor field-effect transistors. We show that acoustic phonons cause a shift and broadening of the local DOS in the nanowire, which modifies the electrical characteristics of the device. The influence of scattering on off-state and on-state currents is investigated for different values of channel length. In the ballistic transport regime, source-to-drain tunneling current is predominant, whereas in the presence of acoustic phonons, diffusion becomes the dominant current transport mechanism. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in uncoupled-mode space has been developed to extract device parameters in the presence of electron-phonon interactions. Electron-phonon scattering is accounted for by adopting the self-consistent Born approximation and using the deformation potential theory.

  5. On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Uskov, A.V.; Mørk, Jesper; Tromborg, Bjarne

    2003-01-01

    In the regime with maximum linear gain in a quantum dot (QD) semiconductor optical amplifier (SOA), instantaneous gain modulation by change of the photon density is possible due to spectral hole burning effects. This, in turn, leads to the opportunity of ultrafast cross-gain modulation (XGM) with......) without pattern effects at modulation bit-rates much higher than the interband relaxation rate. The maximum bit-rate for this pattern-effect-free XGM grows with increasing pump current density of the QD SOA.......In the regime with maximum linear gain in a quantum dot (QD) semiconductor optical amplifier (SOA), instantaneous gain modulation by change of the photon density is possible due to spectral hole burning effects. This, in turn, leads to the opportunity of ultrafast cross-gain modulation (XGM...

  6. Quantum transport through complex networks - from light-harvesting proteins to semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Kreisbeck, Christoph

    2012-06-18

    Electron transport through small systems in semiconductor devices plays an essential role for many applications in micro-electronics. One focus of current research lies on establishing conceptually new devices based on ballistic transport in high mobility AlGaAs/AlGa samples. In the ballistic regime, the transport characteristics are determined by coherent interference effects. In order to guide experimentalists to an improved device design, the characterization and understanding of intrinsic device properties is crucial. We develop a time-dependent approach that allows us to simulate experimentally fabricated, complex devicegeometries with an extension of up to a few micrometers. Particularly, we explore the physical origin of unexpected effects that have been detected in recent experiments on transport through Aharonov-Bohm waveguide-interferometers. Such interferometers can be configured as detectors for transfer properties of embedded quantum systems. We demonstrate that a four-terminal waveguide-ring is a suitable setup for measuring the transmission phase of a harmonic quantum dot. Quantum effects are not restricted exclusively to artificial devices but have been found in biological systems as well. Pioneering experiments reveal quantum effects in light-harvesting complexes, the building blocks of photosynthesis. We discuss the Fenna-Matthews-Olson complex, which is a network of coupled bacteriochlorophylls. It acts as an energy wire in the photosynthetic apparatus of green sulfur bacteria. Recent experimental findings suggest that energy transfer takes place in the form of coherent wave-like motion, rather than through classical hopping from one bacteriochlorophyll to the next. However, the question of why and how coherent transfer emerges in light-harvesting complexes is still open. The challenge is to merge seemingly contradictory features that are observed in experiments on two-dimensional spectroscopy into a consistent theory. Here, we provide such a

  7. Green's functions in quantum physics

    CERN Document Server

    Economou, Eleftherios N

    2006-01-01

    The main part of this book is devoted to the simplest kind of Green's functions, namely the solutions of linear differential equations with a -function source. It is shown that these familiar Green's functions are a powerful tool for obtaining relatively simple and general solutions of basic problems such as scattering and bound-level information. The bound-level treatment gives a clear physical understanding of "difficult" questions such as superconductivity, the Kondo effect, and, to a lesser degree, disorder-induced localization. The more advanced subject of many-body Green's functions is presented in the last part of the book.

  8. Bioengineered II-VI semiconductor quantum dot-carboxymethylcellulose nanoconjugates as multifunctional fluorescent nanoprobes for bioimaging live cells

    Science.gov (United States)

    Mansur, Alexandra A. P.; Mansur, Herman S.; Mansur, Rafael L.; de Carvalho, Fernanda G.; Carvalho, Sandhra M.

    2018-01-01

    Colloidal semiconductor quantum dots (QDs) are light-emitting ultra-small nanoparticles, which have emerged as a new class of nanoprobes with unique optical properties for bioimaging and biomedical diagnostic. However, to be used for most biomedical applications the biocompatibility and water-solubility are mandatory that can achieved through surface modification forming QD-nanoconjugates. In this study, semiconductor II-VI quantum dots of type MX (M = Cd, Pb, Zn, X = S) were directly synthesized in aqueous media and at room temperature using carboxymethylcellulose sodium salt (CMC) behaving simultaneously as stabilizing and surface biofunctional ligand. These nanoconjugates were extensively characterized using UV-visible spectroscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, dynamic light scattering and zeta potential. The results demonstrated that the biopolymer was effective on nucleating and stabilizing the colloidal nanocrystals of CdS, ZnS, and PbS with the average diameter ranging from 2.0 to 5.0 nm depending on the composition of the semiconductor core, which showed quantum-size confinement effect. These QD/polysaccharide conjugates showed luminescent activity from UV-visible to near-infrared range of the spectra under violet laser excitation. Moreover, the bioassays performed proved that these novel nanoconjugates were biocompatible and behaved as composition-dependent fluorescent nanoprobes for in vitro live cell bioimaging with very promising perspectives to be used in numerous biomedical applications and nanomedicine.

  9. Optical properties of diluted magnetic semiconductor Cu:ZnS quantum dots

    Science.gov (United States)

    Imam, N. G.; Bakr Mohamed, Mohamed

    2014-09-01

    Herein quantum dots (QDs) of diluted magnetic semiconductor Cu:ZnS have been synthesized via a simple chemical synthesis method. A single phase solid solution is formed up to x = 0.1 which confirmed by using X-ray diffraction. Crystal structure and microstructure analyses were performed by Rietveld refinement. Photoluminescence (PL) emission spectra were recorded for pure and Cu doped ZnS QDs excited at 268 and 228 nm respectively. PL emission and excitation spectra were investigated in different wavelength regions within the range of 200-900 nm. PL results in the range of 220-300 nm emission band reveals that the band gap of pure ZnS QDs is about 4.43 eV which greater than that of bulk ZnS (3.7 eV). The band gap of Cu:ZnS QDs is tunable with Cu content (x) as well as the crystalline size, and it is peaked around 4.47 eV. PL emission in the range of 350-650 nm exhibits a green fluorescence band peaking around 552 nm for pure ZnS QDs, which confirms the characteristic feature of Zn2+ as luminescent centers in the lattice, while blue emission bands peaked around 471 nm for Cu:ZnS QDs that is attributed to the transition of electrons from conduction band of ZnS to the Cu impurity level. The blue shift of the absorption peak directly reflects the effect of quantum confinement. The PL results have been supported by X-ray phase analysis, high-resolution electron microscopy (HRTEM and SEM), compositional evaluation (EDX) and magnetic measurements (VSM).

  10. Response function of semiconductor detectors, Ge and Si(Li)

    International Nuclear Information System (INIS)

    Zevallos Chavez, Juan Yury

    2003-01-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm 3 , 50 cm 3 , 8 cm 3 and 5 cm 3 , and one Si(Li) with 0.143 cm 3 of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  11. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  12. Space- and time-dependent quantum dynamics of spatially indirect excitons in semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Grasselli, Federico, E-mail: federico.grasselli@unimore.it; Goldoni, Guido, E-mail: guido.goldoni@unimore.it [Department of Physics, Informatics and Mathematics, University of Modena and Reggio Emilia, Modena (Italy); CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy); Bertoni, Andrea, E-mail: andrea.bertoni@nano.cnr.it [CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy)

    2015-01-21

    We study the unitary propagation of a two-particle one-dimensional Schrödinger equation by means of the Split-Step Fourier method, to study the coherent evolution of a spatially indirect exciton (IX) in semiconductor heterostructures. The mutual Coulomb interaction of the electron-hole pair and the electrostatic potentials generated by external gates and acting on the two particles separately are taken into account exactly in the two-particle dynamics. As relevant examples, step/downhill and barrier/well potential profiles are considered. The space- and time-dependent evolutions during the scattering event as well as the asymptotic time behavior are analyzed. For typical parameters of GaAs-based devices, the transmission or reflection of the pair turns out to be a complex two-particle process, due to comparable and competing Coulomb, electrostatic, and kinetic energy scales. Depending on the intensity and anisotropy of the scattering potentials, the quantum evolution may result in excitation of the IX internal degrees of freedom, dissociation of the pair, or transmission in small periodic IX wavepackets due to dwelling of one particle in the barrier region. We discuss the occurrence of each process in the full parameter space of the scattering potentials and the relevance of our results for current excitronic technologies.

  13. Using metal complex-labeled peptides for charge transfer-based biosensing with semiconductor quantum dots

    Science.gov (United States)

    Medintz, Igor L.; Pons, Thomas; Trammell, Scott A.; Blanco-Canosa, Juan B.; Dawson, Philip E.; Mattoussi, Hedi

    2009-02-01

    Luminescent colloidal semiconductor quantum dots (QDs) have unique optical and photonic properties and are highly sensitive to charge transfer in their surrounding environment. In this study we used synthetic peptides as physical bridges between CdSe-ZnS core-shell QDs and some of the most common redox-active metal complexes to understand the charge transfer interactions between the metal complexes and QDs. We found that QD emission underwent quenching that was highly dependent on the choice of metal complex used. We also found that quenching traces the valence or number of metal complexes brought into close proximity of the nanocrystal surface. Monitoring of the QD absorption bleaching in the presence of the metal complex provided insight into the charge transfer mechanism. The data suggest that two distinct charge transfer mechanisms can take place. One directly to the QD core states for neutral capping ligands and a second to surface states for negatively charged capping ligands. A basic understanding of the proximity driven charge-transfer and quenching interactions allowed us to construct proteolytic enzyme sensing assemblies with the QD-peptide-metal complex conjugates.

  14. Development of integrated semiconductor optical sensors for functional brain imaging

    Science.gov (United States)

    Lee, Thomas T.

    Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

  15. A Parameter-Free Semilocal Exchange Energy Functional for Two-Dimensional Quantum Systems.

    Science.gov (United States)

    Patra, Abhilash; Jana, Subrata; Samal, Prasanjit

    2018-03-26

    The method of constructing semilocal density functional for exchange in two dimensions using one of the premier approaches, i.e., density matrix expansion, is revisited, and an accurate functional is constructed. The form of the functional is quite simple and includes no adjustable semiempirical parameters. In it, the kinetic energy dependent momentum is used to compensate nonlocal effects of the system. The functional is then examined by considering the very well-known semiconductor quantum dot systems. And despite its very simple form, the results obtained for quantum dots containing a higher number of electrons agrees pretty well with that of the standard exact exchange theory. Some of the desired properties relevant for the two-dimensional exchange functional and the lower bound associated with it are also discussed. It is observed that the above parameter-free semilocal exchange functional satisfies most of the discussed conditions.

  16. Longitudinal wave function control in single quantum dots with an applied magnetic field.

    Science.gov (United States)

    Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

    2015-01-27

    Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots.

  17. Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells

    Science.gov (United States)

    Dimitriev, G. S.; Sapega, V. F.; Averkiev, N. S.; Panaiotti, I. E.; Ploog, K. H.

    2017-11-01

    The influence of quantum confinement on the spin polarization of holes in ferromagnetic multiple quantum wells based on (Ga,Mn)As diluted magnetic semiconductor has been investigated. It is shown that the spin polarization of holes in the impurity band is more likely determined by the magnetic properties of GaMnAs rather than the quantum-confinement effect. The model of Mn acceptor in a QW, describing the polarization characteristics of photoluminescence in GaAs: Mn/AlAs QWs, has been developed. Experimental data and theoretical analysis show that the spin polarization of holes in (Ga, Mn)As/AlAs QWs can be explained within a model, which suggests that holes are localized in the impurity band.

  18. Quantum gravity partition functions in three dimensions

    Science.gov (United States)

    Maloney, Alexander; Witten, Edward

    2010-02-01

    We consider pure three-dimensional quantum gravity with a negative cosmological constant. The sum of known contributions to the partition function from classical geometries can be computed exactly, including quantum corrections. However, the result is not physically sensible, and if the model does exist, there are some additional contributions. One possibility is that the theory may have long strings and a continuous spectrum. Another possibility is that complex geometries need to be included, possibly leading to a holomorphically factorized partition function. We analyze the subleading corrections to the Bekenstein-Hawking entropy and show that these can be correctly reproduced in such a holomorphically factorized theory. We also consider the Hawking-Page phase transition between a thermal gas and a black hole and show that it is a phase transition of Lee-Yang type, associated with a condensation of zeros in the complex temperature plane. Finally, we analyze pure three-dimensional supergravity, with similar results.

  19. Functional evolution of quantum cylindrical waves

    International Nuclear Information System (INIS)

    Cho, Demian H J; Varadarajan, Madhavan

    2006-01-01

    Kuchar showed that the quantum dynamics of (one polarization) cylindrical wave solutions to vacuum general relativity is determined by those of a free axially symmetric scalar field along arbitrary axially symmetric foliations of a fixed flat (2 + 1)-dimensional spacetime. We investigate if such a dynamics can be defined unitarily within the standard Fock space quantization of the scalar field. Evolution between two arbitrary slices of an arbitrary foliation of the flat spacetime can be built out of a restricted class of evolutions (and their inverses). The restricted evolution is from an initial flat slice to an arbitrary (in general, curved) slice of the flat spacetime and can be decomposed into (i) 'time' evolution in which the spatial Minkowskian coordinates serve as spatial coordinates on the initial and the final slice, followed by (ii) the action of a spatial diffeomorphism of the final slice on the data obtained from (i). We show that although the functional evolution of (i) is unitarily implemented in the quantum theory, generic spatial diffeomorphisms of (ii) are not. Our results imply that a Tomanaga-Schwinger type functional evolution of quantum cylindrical waves is not a viable concept even though, remarkably, the more limited notion of functional evolution in Kuchar's 'half-parametrized formalism' is well defined

  20. Controlling the Photophysical Properties of Semiconductor Quantum Dot Arrays by Strategically Altering Their Surface Chemistry

    Science.gov (United States)

    Marshall, Ashley R.

    Semiconductor quantum dots (QDs) are interesting materials that, after less than 40 years of research, are used in commercial products. QDs are now found in displays, such as Samsung televisions and the Kindle Fire, and have applications in lighting, bio-imaging, quantum computing, and photovoltaics. They offer a large range of desirable properties: a controllable band gap, solution processability, controlled energy levels, and are currently the best materials for multiple exciton generation. The tunable optoelectronic properties of QDs can be controlled using size, shape, composition, and surface treatments--as shown here. Due to the quasi-spherical shape of QDs the surface to volume ratio is high, i.e. many of the constituent atoms are found on the QD surface. This makes QDs highly sensitive to surface chemistry modifications. This thesis encompasses the effects of surface treatments for QDs of two semiconducting materials: lead chalcogenides and CsPbI3. Our group developed a new synthetic technique for lead chalcogenide QDs via the cation exchange of cadmium chalcogenides. An in-depth chemical analysis is paired with optical and electrical studies and we find that metal halide residue contributes to the oxidative stability and decreased trap state density in cation-exchanged PbS QDs. We exploit these properties to make air-stable QD photovoltaic devices from both PbS and PbSe QD materials. Beyond the effects of residual atoms left from the synthetic technique, I investigated how to controllably add atoms onto the surface of QDs. I found that by introducing metal halides as a post-treatment in an electronically coupled array I am able to control the performance parameters in QD photovoltaic devices. These treatments fully infiltrate the assembled film, even under short exposure times and allow me to add controlled quantities of surface atoms to study their effects on film properties and photovoltaic device performance. Finally, I sought to apply the knowledge of

  1. Synthesis, characterization, Raman, and surface enhanced Raman studies of semiconductor quantum dots

    Science.gov (United States)

    Pan, Yi

    The major contributions and discoveries of the dissertation include: (1) Homogeneous nucleation processes for the formation of nanocrystals can occur at low temperature and do not need to proceed at high temperature to overcome a high energy barrier. Monodisperse PbS quantum dots (QDs) obtained with nucleation and growth at 45°C support this finding. (2) Monodisperse single elemental Se QDs can be produced by simple solution crystallization from TDE (1-tetradecene) or ODE (1-octadecene). (3) TDE is a better non-coordinating solvent compare to ODE. STDE (S dissolved in TDE) and SeTDE (Se dissolved in TDE) are stable reagents with long storage time. They can be used as universal precursors for S-containing and Se-containing QDs. (4) QDs synthesis can be carried out at low temperature and relatively short reaction time using the simple, non-injection, one-pot synthetic method. (5) The one-pot method can be extended for the synthesis of QDs and graphene oxide nanocomposites and metal and graphene oxide nanocomposites. (6) PbCl2-OLA (oleylamine) is a universal system for the synthesis of Pb-chaclogenides QDs. (7) Surface enhanced Raman spectroscopy (SERS) is used to probe both size and wave length dependent quantum confinement effects (QCEs) of PbS QDs. (8) Raman spectroscopy is a powerful tool to elucidate crystal structure of Se nanoclusters with size of 1--2 nm. Semiconductor QDs have attracted considerable attention due to their potential for energy-efficient materials in optoelectronic and solar cell applications. When the radius of a QD is decreased to that of the exciton Bohr radius, the valence and conduction bands are known to split into narrower bands due to QCEs. QCEs are both size and wave length dependent. We have developed, synthesized and characterized a series of Pb-chaclogenide QDs, which all the sizes of the QDs are monodisperse and smaller than their respective exciton Bohr radius, to study the QCEs of these QDs. SERS is used as a crucial tool to

  2. Spectroscopy of size dependent many-particle effects in single self-assembled semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dal Savio, C.

    2006-02-20

    Single InAs quantum dots (QDs) grown with the Stranski-Krastanov method in a In{sub 0.12}Ga{sub 0.88}As quantum well embedded in GaAs and emitting in the near infrared have been optically investigated. To perform QD spectroscopy at low temperatures a very stable micro-photoluminescence ({mu}-PL) microscope set-up fully integrated in a liquid helium (LHe) cryostate has been successfully developed. The system is based on the cold finger technique and a Fourier Transform (FT) spectrometer combined with a nitrogen cooled Ge detector. Photoluminescence of the QDs was excited non resonantly with a He-Ne laser and single dot spectroscopy was carried out at temperatures below 60 K. The experimental set-up allows mapping of the optical emission by recording spectra for every point of a scan grid. This mapping mode is used to acquire optical images and to locate a particular dot for investigation. Series of measurement on a single QD were normally performed over a long time (from a few days to a week), with the need of daily adjustment in the sub-micrometer range. At low excitation power a single sharp line (E{sub x}) arising from recombination of a single exciton in the dot is observed. Varying the excitation density the spectra become more complex, with appearance of the biexciton emission line (E{sub xx}) on the lower energies side of the E{sub x} line, followed by emission from excitons occupying higher shells in the dot. Measured biexciton binding energies and power dependence are in good agreement with values reported in the literature. The temperature dependence of the optical emission was investigated. The energy shows the characteristic decrease related to the shrinking of the semiconductor band gap, while the linewidth evolution is compatible with broadening due to coupling with acoustic and optical phonons. A statistics of biexciton binding energies over a dozen of dots was acquired and the results compared with single QD spectroscopy data available in the

  3. Nonequilibrium functional bosonization of quantum wire networks

    Energy Technology Data Exchange (ETDEWEB)

    Ngo Dinh, Stephane, E-mail: stephane.ngodinh@kit.edu [Institut fuer Theorie der Kondensierten Materie, Karlsruhe Institute of Technology, 76128 Karlsruhe (Germany); DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology, 76128 Karlsruhe (Germany); Bagrets, Dmitry A. [Institut fuer Theoretische Physik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Koeln (Germany); Mirlin, Alexander D. [Institut fuer Theorie der Kondensierten Materie, Karlsruhe Institute of Technology, 76128 Karlsruhe (Germany); Institut fuer Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe (Germany); DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology, 76128 Karlsruhe (Germany); Petersburg Nuclear Physics Institute, 188300 St. Petersburg (Russian Federation)

    2012-11-15

    We develop a general approach to nonequilibrium nanostructures formed by one-dimensional channels coupled by tunnel junctions and/or by impurity scattering. The formalism is based on nonequilibrium version of functional bosonization. A central role in this approach is played by the Keldysh action that has a form reminiscent of the theory of full counting statistics. To proceed with evaluation of physical observables, we assume the weak-tunneling regime and develop a real-time instanton method. A detailed exposition of the formalism is supplemented by two important applications: (i) tunneling into a biased Luttinger liquid with an impurity, and (ii) quantum Hall Fabry-Perot interferometry. - Highlights: Black-Right-Pointing-Pointer A nonequilibrium functional bosonization framework for quantum wire networks is developed Black-Right-Pointing-Pointer For the study of observables in the weak tunneling regime a real-time instanton method is elaborated. Black-Right-Pointing-Pointer We consider tunneling into a biased Luttinger liquid with an impurity. Black-Right-Pointing-Pointer We analyze electronic Fabry-Perot interferometers in the integer quantum Hall regime.

  4. Native defects in oxide semiconductors: a density functional approach.

    Science.gov (United States)

    Oba, Fumiyasu; Choi, Minseok; Togo, Atsushi; Seko, Atsuto; Tanaka, Isao

    2010-09-29

    We report a semilocal and hybrid Hartree-Fock density functional study of native defects in three oxide semiconductors: ZnO, SrTiO(3), and SnO. The defect that is responsible for the n-type conductivity of ZnO has been debated, in which the O vacancy, Zn interstitial, their complexes, and residual H impurity are considered candidates. Our results indicate that the O vacancy induces a deep and localized in-gap state, whereas the Zn interstitial is a shallow donor and hence can be a source of the carriers. In view of the formation energies, the O vacancy is likely to form with a substantial concentration under O-poor conditions, but the Zn interstitial is unlikely. We thus propose that the O vacancy is relevant to the nonstoichiometry of ZnO and that a source other than the native defects, such as the H impurity, needs to be considered for the n-type conductivity. For SrTiO(3), the O vacancy and its complexes have been regarded as the origins of some of the remarkable electrical and optical properties. We suggest significant roles of the Ti antisite for a new insight into the defect-induced properties. Two types of Ti antisite, both of which are off-centered from the Sr site but toward different directions, exhibit low formation energies under Ti-rich conditions as does the O vacancy. They can explain optical properties such as visible-light emission, deep-level absorption, and the ferroelectricity observed in reduced SrTiO(3). As an example of p-type conductors, SnO has been investigated with a focus on the acceptor-like native defects. Under O-rich conditions, the Sn vacancy and O interstitial are found to be energetically favorable. The Sn vacancy induces shallow acceptor levels and can therefore be a source of carriers. The O interstitial shows no in-gap levels and hence it is inactive in terms of the carrier generation and compensation. However, this defect is a key to the understanding of the structures of intermediate compounds between SnO and SnO(2).

  5. Statistical analysis of time-resolved emission from ensembles of semiconductor quantum dots: Interpretation of exponential decay models

    DEFF Research Database (Denmark)

    Van Driel, A.F.; Nikolaev, I.S.; Vergeer, P.

    2007-01-01

    We present a statistical analysis of time-resolved spontaneous emission decay curves from ensembles of emitters, such as semiconductor quantum dots, with the aim of interpreting ubiquitous non-single-exponential decay. Contrary to what is widely assumed, the density of excited emitters and the in......We present a statistical analysis of time-resolved spontaneous emission decay curves from ensembles of emitters, such as semiconductor quantum dots, with the aim of interpreting ubiquitous non-single-exponential decay. Contrary to what is widely assumed, the density of excited emitters...... decay component is multiplied by its radiative decay rate. A central result of our paper is the derivation of the emission decay curve when both radiative and nonradiative decays are independently distributed. In this case, the well-known emission quantum efficiency can no longer be expressed...... by a single number, but is also distributed. We derive a practical description of non-single-exponential emission decay curves in terms of a single distribution of decay rates; the resulting distribution is identified as the distribution of total decay rates weighted with the radiative rates. We apply our...

  6. Theory of resonant donor-impurity magnetopolaron in semiconductor quantum wells

    International Nuclear Information System (INIS)

    Osorio, F.A.P.; Maialle, M.Z.; Hipolito, O.

    1989-11-01

    We report for the first time a theoretical calculation for the resonant donor impurity magnetopolaron in GaAs-GA 1-x Al x As quantum-well structures. The intra donor 1s → 2p, transition frequencies are calculated as a function of the magnetic field, by taking into account the polaron effects and nonparabolicity of the conduction band. We found a pinning behaviour due to interaction with LO phonons as suggested by the experimentalists. Our results for the peak positions of those transitions are in very good agreement with recent experimental data. (author). 18 refs, 1 fig

  7. Optically Active 3-Dimensional Semiconductor Quantum Dot Assemblies in Heterogeneous Nanoscale Hosts

    Energy Technology Data Exchange (ETDEWEB)

    Nurmikko, Arto V [Brown Univ., Providence, RI (United States). Division of Engineering

    2017-05-07

    Synthesis of semiconductor nanomaterials by low-cost, solution-based methods is shown to lead to new classes of thin film light emitting materials. These materials have been integrated to demonstrative compact laser device testbeds to illustrate their potential for coherent emitters across the visible spectrum to disrupt established photonics technologies, particularly semiconductor lasers?

  8. Phase- and Polarization-Controlled Two-Photon Rabi Oscillation of the Biexciton State in a Semiconductor Quantum Dot

    Directory of Open Access Journals (Sweden)

    Erlin Sun

    2014-01-01

    Full Text Available Under a degenerate two-photon resonant excitation, the Rabi oscillation of the four-level biexciton system in a semiconductor quantum dot is theoretically investigated. The influence of the laser phases on the state manipulation is modeled and numerically calculated. Due to the interference between different excitation paths, the laser phase plays an important role and can be utilized as an alternate control knob to coherently manipulate the biexciton state. The phase control can be facilely implemented by changing the light polarization via a quarter-wave plate.

  9. Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

    International Nuclear Information System (INIS)

    Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R.H.; Plaisier, J.R.; Antonelli, M.

    2017-01-01

    In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In 0.75 Ga 0.25 As/In 0.75 Al 0.25 As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

  10. Almost Automorphic Functions on the Quantum Time Scale and Applications

    Directory of Open Access Journals (Sweden)

    Yongkun Li

    2017-01-01

    Full Text Available We first propose two types of concepts of almost automorphic functions on the quantum time scale. Secondly, we study some basic properties of almost automorphic functions on the quantum time scale. Then, we introduce a transformation between functions defined on the quantum time scale and functions defined on the set of generalized integer numbers; by using this transformation we give equivalent definitions of almost automorphic functions on the quantum time scale; following the idea of the transformation, we also give a concept of almost automorphic functions on more general time scales that can unify the concepts of almost automorphic functions on almost periodic time scales and on the quantum time scale. Finally, as an application of our results, we establish the existence of almost automorphic solutions of linear and semilinear dynamic equations on the quantum time scale.

  11. Quantum mechanics

    International Nuclear Information System (INIS)

    Basdevant, J.L.; Dalibard, J.; Joffre, M.

    2008-01-01

    All physics is quantum from elementary particles to stars and to the big-bang via semi-conductors and chemistry. This theory is very subtle and we are not able to explain it without the help of mathematic tools. This book presents the principles of quantum mechanics and describes its mathematical formalism (wave function, Schroedinger equation, quantum operators, spin, Hamiltonians, collisions,..). We find numerous applications in the fields of new technologies (maser, quantum computer, cryptography,..) and in astrophysics. A series of about 90 exercises with their answers is included. This book is based on a physics course at a graduate level. (A.C.)

  12. Quantum Dot Devices for Optical Signal Processing

    DEFF Research Database (Denmark)

    Chen, Yaohui

    This thesis describes the physics and applications of quantum dot semiconductor optical ampliers through numerical simulations. As nano-structured materials with zero-dimensional quantum connement, semiconductor quantum dot material provides a number of unique physical properties compared...... with other semiconductor materials. The understanding of such properties is important in order to improve the performance of existing devices and to trigger the development of new semiconductor devices for dierent optical signal processing functionalities in the future. We present a detailed quantum dot...... semiconductor optical amplier model incorporating a carrier dynamics rate equation model for quantum dots with inhomogeneous broadening as well as equations describing propagation. A phenomenological description has been used to model the intradot electron scattering between discrete quantum dot states...

  13. Fabrication of highly nonlinear germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots using atomization doping process and its optical nonlinearity.

    Science.gov (United States)

    Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek

    2011-01-31

    Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.

  14. Discrete Wigner functions and quantum computation

    International Nuclear Information System (INIS)

    Galvao, E.

    2005-01-01

    Full text: Gibbons et al. have recently defined a class of discrete Wigner functions W to represent quantum states in a finite Hilbert space dimension d. I characterize the set C d of states having non-negative W simultaneously in all definitions of W in this class. I then argue that states in this set behave classically in a well-defined computational sense. I show that one-qubit states in C 2 do not provide for universal computation in a recent model proposed by Bravyi and Kitaev [quant-ph/0403025]. More generally, I show that the only pure states in C d are stabilizer states, which have an efficient description using the stabilizer formalism. This result shows that two different notions of 'classical' states coincide: states with non-negative Wigner functions are those which have an efficient description. This suggests that negativity of W may be necessary for exponential speed-up in pure-state quantum computation. (author)

  15. Low threshold amplified spontaneous emission from tin oxide quantum dots: a instantiation of dipole transition silence semiconductors.

    Science.gov (United States)

    Pan, Shu Sheng; Yu, Siu Fung; Zhang, Wen Fei; Zhu, Hai; Lu, Wei; Jin, Li Min

    2013-12-07

    Direct bandgap semiconductors, such as In2O3, Cu2O, and SnO2, have enormous applications in photochemistry, photovoltaics, and optoelectronics. Due to the same parity of conduction and valence bands, the dipole transition is silent in these direct bandgap semiconductors. The low band-to-band transition efficiency prevents them from high intensity light emission or absorption. Here, we report the fabrication of SnO2 quantum dots (QDs) with sizes less than the exciton Bohr radius by a facile "top-down" strategy based on laser fragmentation of SnO in water. The SnO2 QDs shows exciton emission at ∼300 nm with a high quantum yield of ~17%. Amplified spontaneous exciton emission is also achieved from a thin layer of SnO2 QDs dispersed in PEG400 on a quartz substrate. Therefore, we have shown that SnO2 QDs can be a potential luminescent material suitable for the realization of ultraviolet B lasing devices.

  16. Gluon Green functions free of quantum fluctuations

    Directory of Open Access Journals (Sweden)

    A. Athenodorou

    2016-09-01

    Full Text Available This letter reports on how the Wilson flow technique can efficaciously kill the short-distance quantum fluctuations of 2- and 3-gluon Green functions, remove the ΛQCD scale and destroy the transition from the confining non-perturbative to the asymptotically-free perturbative sector. After the Wilson flow, the behavior of the Green functions with momenta can be described in terms of the quasi-classical instanton background. The same behavior also occurs, before the Wilson flow, at low-momenta. This last result permits applications as, for instance, the detection of instanton phenomenological properties or a determination of the lattice spacing only from the gauge sector of the theory.

  17. Green's functions in quantum physics. 3. ed.

    International Nuclear Information System (INIS)

    Economou, E.N.

    2006-01-01

    The new edition of a standard reference will be of interest to advanced students wishing to become familiar with the method of Green's functions for obtaining simple and general solutions to basic problems in quantum physics. The main part is devoted to the simplest kind of Green's functions, namely the solutions of linear differential equations with a -function source. It is shown that these familiar Green's functions are a powerful tool for obtaining relatively simple and general solutions of basic problems such as scattering and bound level information. The bound-level treatment gives a clear physical understanding of ''difficult'' questions such as superconductivity, the Kondo effect, and, to a lesser degree, disorder-induced localization. The more advanced subject of many-body Green's functions is presented in the last part of the book. This third edition is 50% longer than the previous and offers end-of-chapter problems and solutions (40% are solved) and additional appendices to help it is to serve as an effective self-tutorial and self-sufficient reference. Throughout, it demonstrates the powerful and unifying formalism of Green's functions across many applications, including transport properties, carbon nanotubes, and photonics and photonic crystals. (orig.)

  18. Correlation Functions in Open Quantum-Classical Systems

    Directory of Open Access Journals (Sweden)

    Chang-Yu Hsieh

    2013-12-01

    Full Text Available Quantum time correlation functions are often the principal objects of interest in experimental investigations of the dynamics of quantum systems. For instance, transport properties, such as diffusion and reaction rate coefficients, can be obtained by integrating these functions. The evaluation of such correlation functions entails sampling from quantum equilibrium density operators and quantum time evolution of operators. For condensed phase and complex systems, where quantum dynamics is difficult to carry out, approximations must often be made to compute these functions. We present a general scheme for the computation of correlation functions, which preserves the full quantum equilibrium structure of the system and approximates the time evolution with quantum-classical Liouville dynamics. Several aspects of the scheme are discussed, including a practical and general approach to sample the quantum equilibrium density, the properties of the quantum-classical Liouville equation in the context of correlation function computations, simulation schemes for the approximate dynamics and their interpretation and connections to other approximate quantum dynamical methods.

  19. Decoherence of spin states induced by Rashba coupling for an electron confined to a semiconductor quantum dot in the presence of a magnetic field

    Science.gov (United States)

    Poszwa, A.

    2018-05-01

    We investigate quantum decoherence of spin states caused by Rashba spin-orbit (SO) coupling for an electron confined to a planar quantum dot (QD) in the presence of a magnetic field (B). The Schrödinger equation has been solved in a frame of second-order perturbation theory. The relationship between the von Neumann (vN) entropy and the spin polarization is obtained. The relation is explicitly demonstrated for the InSb semiconductor QD.

  20. Quantum transport in III-V-semiconductor nanocolumns; Quantentransport in III-V-Halbleiternanosaeulen

    Energy Technology Data Exchange (ETDEWEB)

    Wensorra, Jakob

    2009-03-20

    The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Besides the fabrication and electrical characterization of the devices, numerical calculations, simulations and quantum transport models represent the second important part of the work. GaAs/AlAs and InAs nanocolumns with lateral dimensions down to 30 nm have been processed by top-down approach. Room temperature DC electrical measurements on the nano-RTDs show a distinct negative differential resistance in the I-V characteristics for devices down to 30 nm lateral dimension. The miniaturization of the RTDs leads to the degradation of the transport properties, especially of the peak to valley current ratio (PVR), due to the increased surface scattering. Apart from the main current peak, new substructures can be observed in the I-V characteristics. These are shoulder like features for columns with diameters between 80 nm and 100 nm but become clear peaks when the column diameters are in the 55-75 nm range. For sub-65 nm column lateral dimensions, a strong increase of the PVR and a sharp single peak is observed. A local maximum of the PVR of 3 is reached for columns with 50 nm diameter. The sub-40 nm devices show only space charge limited currents in the I-V characteristics. This behavior can be shifted to smaller or larger diameters by increasing or reduction of the channel doping. For the smallest nanocolumns the lateral quantum confinement, caused by the low dimensionality of the system, leads to the formation of a 3D quantum-point-contact (QPC) in front of the DBQW structure. The quantization in this QPC depends on the column diameter and for a 50 nm column it exceeds the room temperature thermal broadening of the Fermi distribution function of about 25 meV. The measurements of the nano-RTTs indicate a

  1. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  2. General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function

    DEFF Research Database (Denmark)

    Stradi, Daniele; Martinez, Umberto; Blom, Anders

    2016-01-01

    an atomistic approach based on density functional theory and nonequilibrium Green's function, which includes all the relevant ingredients required to model realistic metal-semiconductor interfaces and allows for a direct comparison between theory and experiments via I-Vbias curve simulations. We apply...

  3. Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

    Science.gov (United States)

    Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    2015-03-01

    Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  4. On quantum mechanical phase-space wave functions

    DEFF Research Database (Denmark)

    Wlodarz, Joachim J.

    1994-01-01

    An approach to quantum mechanics based on the notion of a phase-space wave function is proposed within the Weyl-Wigner-Moyal representation. It is shown that the Schrodinger equation for the phase-space wave function is equivalent to the quantum Liouville equation for the Wigner distribution...

  5. Microscopic theory of phonon-induced effects on semiconductor quantum dot decay dynamics in cavity QED

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, P.

    2012-01-01

    We investigate the influence of the electron-phonon interaction on the decay dynamics of a quantum dot coupled to an optical microcavity. We show that the electron-phonon interaction has important consequences on the dynamics, especially when the quantum dot and cavity are tuned out of resonance...

  6. Playing with functions of positive type, classical and quantum

    International Nuclear Information System (INIS)

    Aniello, Paolo

    2015-01-01

    A function of positive type can be defined as a positive functional on a convolution algebra of a locally compact group. In the case where the group is abelian, by Bochner’s theorem a function of positive type is, up to normalization, the Fourier transform of a probability measure. Therefore, considering the group of translations on phase space, a suitably normalized phase-space function of positive type can be regarded as a realization of a classical state. Thus, it may be called a function of classical positive type. Replacing the ordinary convolution on phase space with the twisted convolution, one obtains a noncommutative algebra of functions whose positive functionals we may call functions of quantum positive type. In fact, by a quantum version of Bochner’s theorem, a continuous function of quantum positive type is, up to normalization, the (symplectic) Fourier transform of a Wigner quasi-probability distribution; hence, it can be regarded as a phase-space realization of a quantum state. Playing with functions of positive type—classical and quantum—one is led in a natural way to consider a class of semigroups of operators, the classical-quantum semigroups. The physical meaning of these mathematical objects is unveiled via quantization, so obtaining a class of quantum dynamical semigroups that, borrowing terminology from quantum information science, may be called classical-noise semigroups. (paper)

  7. ZnS semiconductor quantum dots production by an endophytic fungus Aspergillus flavus

    Energy Technology Data Exchange (ETDEWEB)

    Uddandarao, Priyanka, E-mail: uddandaraopriyanka@gmail.com; B, Raj Mohan, E-mail: rajmohanbala@gmail.com

    2016-05-15

    Graphical abstract: - Highlights: • Endophytic fungus Aspergillus flavus isolated from a medicinal plant Nothapodytes foetida was used for the synthesis of quantum dots. • Morris-Weber kinetic model and Lagergren's pseudo-first-order rate equation were used to study the biosorption kinetics. • Polycrystalline ZnS quantum dots of 18 nm and 58.9 nm from TEM and DLS, respectively. - Abstract: The development of reliable and eco-friendly processes for the synthesis of metal sulphide quantum dots has been considered as a major challenge in the field of nanotechnology. In the present study, polycrystalline ZnS quantum dots were synthesized from an endophytic fungus Aspergillus flavus. It is noteworthy that apart from being rich sources of bioactive compounds, endophytic fungus also has the ability to mediate the synthesis of nanoparticles. TEM and DLS revealed the formation of spherical particles with an average diameter of about 18 nm and 58.9 nm, respectively. The ZnS quantum dots were further characterized using SEM, EDAX, XRD, UV–visible spectroscopy and FTIR. The obtained results confirmed the synthesis of polycrystalline ZnS quantum dots and these quantum dots are used for studying ROS activity. In addition this paper explains kinetics of metal sorption to study the role of biosorption in synthesis of quantum dots by applying Morris-Weber kinetic model. Since Aspergillus flavus is isolated from a medicinal plant Nothapodytes foetida, quantum dots synthesized from this fungus may have great potential in broad environmental and medical applications.

  8. ZnS semiconductor quantum dots production by an endophytic fungus Aspergillus flavus

    International Nuclear Information System (INIS)

    Uddandarao, Priyanka; B, Raj Mohan

    2016-01-01

    Graphical abstract: - Highlights: • Endophytic fungus Aspergillus flavus isolated from a medicinal plant Nothapodytes foetida was used for the synthesis of quantum dots. • Morris-Weber kinetic model and Lagergren's pseudo-first-order rate equation were used to study the biosorption kinetics. • Polycrystalline ZnS quantum dots of 18 nm and 58.9 nm from TEM and DLS, respectively. - Abstract: The development of reliable and eco-friendly processes for the synthesis of metal sulphide quantum dots has been considered as a major challenge in the field of nanotechnology. In the present study, polycrystalline ZnS quantum dots were synthesized from an endophytic fungus Aspergillus flavus. It is noteworthy that apart from being rich sources of bioactive compounds, endophytic fungus also has the ability to mediate the synthesis of nanoparticles. TEM and DLS revealed the formation of spherical particles with an average diameter of about 18 nm and 58.9 nm, respectively. The ZnS quantum dots were further characterized using SEM, EDAX, XRD, UV–visible spectroscopy and FTIR. The obtained results confirmed the synthesis of polycrystalline ZnS quantum dots and these quantum dots are used for studying ROS activity. In addition this paper explains kinetics of metal sorption to study the role of biosorption in synthesis of quantum dots by applying Morris-Weber kinetic model. Since Aspergillus flavus is isolated from a medicinal plant Nothapodytes foetida, quantum dots synthesized from this fungus may have great potential in broad environmental and medical applications.

  9. Bistable four-wave mixing response in a semiconductor quantum dot coupled to a photonic crystal nanocavity.

    Science.gov (United States)

    Li, Jian-Bo; Xiao, Si; Liang, Shan; He, Meng-Dong; Luo, Jian-Hua; Kim, Nam-Chol; Chen, Li-Qun

    2017-10-16

    We perform a theoretical study of the bistable four-wave mixing (FWM) response in a coupled system comprised of a semiconductor quantum dot (SQD) and a photonic crystal (PC) nanocavity in which the SQD is embedded. It is shown that the shape of the FWM spectrum can switch among single-peaked, double-peaked, triple-peaked, and four-peaked arising from the vacuum Rabi splitting and the exciton-nanocavity coupling. Especially, we map out bistability phase diagrams within a parameter subspace of the system, and find that it is easy to turn on or off the bistable FWM response by only adjusting the excitation frequency or the pumping intensity. Our results offer a feasible means for measuring the SQD-PC nanocavity coupling strength and open a new avenue to design optical switches and memories.

  10. Mind your P's and Q's: the coming of age of semiconducting polymer dots and semiconductor quantum dots in biological applications.

    Science.gov (United States)

    Massey, Melissa; Wu, Miao; Conroy, Erin M; Algar, W Russ

    2015-08-01

    Semiconductor quantum dots (QDs) and semiconducting polymer nanoparticles (Pdots) are brightly emissive materials that offer many advantages for bioanalysis and bioimaging, and are complementary to revolutionary advances in fluorescence technology. Within the context of biological applications, this review compares the evolution and different stages of development of these two types of nanoparticle, and addresses current perceptions about QDs. Although neither material is a wholesale replacement for fluorescent dyes, recent trends have demonstrated that both types of nanoparticle can excel in applications that are often too demanding for fluorescent dyes alone. Examples discussed in this review include single particle tracking and imaging, multicolor imaging and multiplexed detection, biosensing, point-of-care diagnostics, in vivo imaging and drug delivery. Copyright © 2014 Elsevier Ltd. All rights reserved.

  11. Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

    Science.gov (United States)

    Razeghi, M.

    2003-09-01

    The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3 5 μm range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.

  12. The use of bulk states to accelerate the band edge statecalculation of a semiconductor quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Vomel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques,Osni A.; Dongarra, Jack J.

    2006-05-10

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations.

  13. Functional renormalization group for three-dimensional quantum magnetism

    Science.gov (United States)

    Iqbal, Yasir; Thomale, Ronny; Parisen Toldin, Francesco; Rachel, Stephan; Reuther, Johannes

    2016-10-01

    We formulate a pseudofermion functional renormalization group (PFFRG) scheme to address frustrated quantum magnetism in three dimensions. In a scenario where many numerical approaches fail due to sign problem or small system size, three-dimensional (3D) PFFRG allows for a quantitative investigation of the quantum spin problem and its observables. We illustrate 3D PFFRG for the simple cubic J1-J2-J3 quantum Heisenberg antiferromagnet, and benchmark it against other approaches, if available.

  14. Semiconductor Modeling Techniques

    CERN Document Server

    Xavier, Marie

    2012-01-01

    This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

  15. Ultrafast spectral interferometry of resonant secondary emmission from semiconductor quantum wells

    DEFF Research Database (Denmark)

    Birkedal, Dan; Shah, Jagdeep

    1999-01-01

    Recent investigations of secondary emission from quantum well excitons follwing resonant excitation have demonstrated an intricate interplay of coherent Rayleigh scattering and incoherent luminescence. We have very recently demonstrated that it is possible to isolate and time resolve the coherent...

  16. Relaxation of electron energy in the polar semiconductor double quantum dots

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Khás, Zdeněk; Zdeněk, Petr; Čerňanský, Marian; Lin, C. Y.

    2002-01-01

    Roč. 314, - (2002), s. 490-493 ISSN 0921-4526 R&D Projects: GA AV ČR IAA1010113; GA MŠk OC P5.20 Institutional research plan: CEZ:AV0Z1010914 Keywords : quantum dots * relaxation * double quantum dots * electron-photon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.609, year: 2002

  17. Measurements of gain and index dynamics in quantum dash semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Poel, Mike van der; Berg, Tommy Winther; Mørk, Jesper

    2004-01-01

    Ultrafast gain and index recovery of a 1.5um quantum dash amplifier after short pulse amplification is measured using pump-probe spectroscopy. The major part of the gain reduction is found to recover within a few picoseconds.......Ultrafast gain and index recovery of a 1.5um quantum dash amplifier after short pulse amplification is measured using pump-probe spectroscopy. The major part of the gain reduction is found to recover within a few picoseconds....

  18. Canonical partition functions: ideal quantum gases, interacting classical gases, and interacting quantum gases

    Science.gov (United States)

    Zhou, Chi-Chun; Dai, Wu-Sheng

    2018-02-01

    In statistical mechanics, for a system with a fixed number of particles, e.g. a finite-size system, strictly speaking, the thermodynamic quantity needs to be calculated in the canonical ensemble. Nevertheless, the calculation of the canonical partition function is difficult. In this paper, based on the mathematical theory of the symmetric function, we suggest a method for the calculation of the canonical partition function of ideal quantum gases, including ideal Bose, Fermi, and Gentile gases. Moreover, we express the canonical partition functions of interacting classical and quantum gases given by the classical and quantum cluster expansion methods in terms of the Bell polynomial in mathematics. The virial coefficients of ideal Bose, Fermi, and Gentile gases are calculated from the exact canonical partition function. The virial coefficients of interacting classical and quantum gases are calculated from the canonical partition function by using the expansion of the Bell polynomial, rather than calculated from the grand canonical potential.

  19. Wave-function reconstruction in a graded semiconductor superlattice

    DEFF Research Database (Denmark)

    Lyssenko, V. G.; Hvam, Jørn Märcher; Meinhold, D.

    2004-01-01

    We reconstruct a test wave function in a strongly coupled, graded well-width superlattice by resolving the spatial extension of the interband polarisation and deducing the wave function employing non-linear optical spectroscopy. The graded gap superlattice allows us to precisely control the dista...

  20. Gravity induced corrections to quantum mechanical wave functions

    International Nuclear Information System (INIS)

    Singh, T.P.

    1990-03-01

    We perform a semiclassical expansion in the Wheeler-DeWitt equation, in powers of the gravitational constant. We then show that quantum gravitational fluctuations can provide a correction to the wave-functions which are solutions of the Schroedinger equation for matter. This also implies a correction to the expectation values of quantum mechanical observables. (author). 6 refs

  1. Quantum chemical calculations of using density functional theory ...

    Indian Academy of Sciences (India)

    K RACKESH JAWAHER

    2018-02-15

    Feb 15, 2018 ... Quantum chemical calculations of Cr2O3/SnO2 using density functional theory method ... Quantum chemical calculations have been employed to study the molecular effects produced by. Cr2O3/SnO2 optimised structure. .... optical memory for emerging technologies in areas such as telecommunications ...

  2. Quantum probability from a geometrical interpretation of a wave function

    OpenAIRE

    Sugiyama, K.

    1999-01-01

    The probabilistic prediction of quantum theory is mystery. I solved the mystery by a geometrical interpretation of a wave function. This suggests the unification between quantum theory and the theory of relativity. This suggests Many-Worlds Interpretation is true, too.

  3. Functional renormalization group methods in quantum chromodynamics

    Energy Technology Data Exchange (ETDEWEB)

    Braun, J.

    2006-12-18

    We apply functional Renormalization Group methods to Quantum Chromodynamics (QCD). First we calculate the mass shift for the pion in a finite volume in the framework of the quark-meson model. In particular, we investigate the importance of quark effects. As in lattice gauge theory, we find that the choice of quark boundary conditions has a noticeable effect on the pion mass shift in small volumes. A comparison of our results to chiral perturbation theory and lattice QCD suggests that lattice QCD has not yet reached volume sizes for which chiral perturbation theory can be applied to extrapolate lattice results for low-energy observables. Phase transitions in QCD at finite temperature and density are currently very actively researched. We study the chiral phase transition at finite temperature with two approaches. First, we compute the phase transition temperature in infinite and in finite volume with the quark-meson model. Though qualitatively correct, our results suggest that the model does not describe the dynamics of QCD near the finite-temperature phase boundary accurately. Second, we study the approach to chiral symmetry breaking in terms of quarks and gluons. We compute the running QCD coupling for all temperatures and scales. We use this result to determine quantitatively the phase boundary in the plane of temperature and number of quark flavors and find good agreement with lattice results. (orig.)

  4. The wave function essays on the metaphysics of quantum mechanics

    CERN Document Server

    Albert, David Z

    2013-01-01

    This is a new volume of original essays on the metaphysics of quantum mechanics. The essays address questions such as: What fundamental metaphysics is best motivated by quantum mechanics? What is the ontological status of the wave function? Does quantum mechanics support the existence of any other fundamental entities, e.g. particles? What is the nature of the fundamental space (or space-time manifold) of quantum mechanics? What is the relationship between the fundamental ontology of quantum mechanics and ordinary, macroscopic objects like tables, chairs, and persons? This collection includes a comprehensive introduction with a history of quantum mechanics and the debate over its metaphysical interpretation focusing especially on the main realist alternatives.

  5. Quantum computing without wavefunctions: time-dependent density functional theory for universal quantum computation.

    Science.gov (United States)

    Tempel, David G; Aspuru-Guzik, Alán

    2012-01-01

    We prove that the theorems of TDDFT can be extended to a class of qubit Hamiltonians that are universal for quantum computation. The theorems of TDDFT applied to universal Hamiltonians imply that single-qubit expectation values can be used as the basic variables in quantum computation and information theory, rather than wavefunctions. From a practical standpoint this opens the possibility of approximating observables of interest in quantum computations directly in terms of single-qubit quantities (i.e. as density functionals). Additionally, we also demonstrate that TDDFT provides an exact prescription for simulating universal Hamiltonians with other universal Hamiltonians that have different, and possibly easier-to-realize two-qubit interactions. This establishes the foundations of TDDFT for quantum computation and opens the possibility of developing density functionals for use in quantum algorithms.

  6. Conductance enhancement in quantum-point-contact semiconductor-superconductor devices

    DEFF Research Database (Denmark)

    Mortensen, Asger; Jauho, Antti-Pekka; Flensberg, Karsten

    1999-01-01

    We present numerical calculations of the conductance of an interface between a phase-coherent two-dimensional electron gas and a superconductor with a quantum point contact in the normal region. Using a scattering matrix approach we reconsider the geometry of De Raedt, Michielsen, and Klapwijk...... [Phys. Rev. B 50, 631 (1994)] which was studied within the time-dependent Bogoliubov-de Gennes formalism. We find that the factor-of-2 enhancement of the conductance G(NS) compared to the normal state conductance GN for ideal interfaces may be suppressed for interfaces with a quantum point contact...

  7. Theoretical study of excitonic complexes in semiconductors quantum wells; Estudo teorico de complexos excitonicos em pocos quanticos de semicondutores

    Energy Technology Data Exchange (ETDEWEB)

    Dacal, Luis Carlos Ogando

    2001-08-01

    A physical system where indistinguishable particles interact with each other creates the possibility of studying correlation and exchange effect. The simplest system is that one with only two indistinguishable particles. In condensed matter physics, these complexes are represented by charged excitons, donors and acceptors. In quantum wells, the valence band is not parabolic, therefore, the negatively charged excitons and donors are theoretically described in a simpler way. Despite the fact that the stability of charged excitons (trions) is known since the late 50s, the first experimental observation occurred only at the early 90s in quantum well samples, where their binding energies are one order of magnitude larger due to the one dimensional carriers confinement. After this, these complexes became the subject of an intense research because the intrinsic screening of electrical interactions in semiconductor materials allows that magnetic fields that are usual in laboratories have strong effects on the trion binding energy. Another rich possibility is the study of trions as an intermediate state between the neutral exciton and the Fermi edge singularity when the excess of doping carriers is increased. In this thesis, we present a theoretical study of charged excitons and negatively charged donors in GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum wells considering the effects of external electric and magnetic fields. We use a simple, accurate and physically clear method to describe these systems in contrast with the few and complex treatments s available in the literature. Our results show that the QW interface defects have an important role in the trion dynamics. This is in agreement with some experimental works, but it disagrees with other ones. (author)

  8. Semiconductors and semimetals intersubband transitions in quantum wells physics and device applications

    CERN Document Server

    Weber, Eicke R; Liu, H C

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Pro

  9. Piezoelectric and deformation potential effects of strain-dependent luminescence in semiconductor quantum well structures

    DEFF Research Database (Denmark)

    Zhang, Aihua; Peng, Mingzeng; Willatzen, Morten

    2017-01-01

    The mechanism of strain-dependent luminescence is important for the rational design of pressure-sensing devices. The interband momentum-matrix element is the key quantity for understanding luminescent phenomena. We analytically solved an infinite quantum well (IQW) model with strain...

  10. Absence of quantized energy-states local diffusion in semiconductor quantum-dash structures

    KAUST Repository

    Tan, Cheeloon

    2010-01-01

    We present an analysis of InAs/InAlGaAs/InP quantum-dash structures utilizing different degrees of postgrowth-lattice-disordering. The observation of digital transitions among quantized states discards the origins of multiple excited states from a single group of dash ensembles.

  11. Proposed Coupling of an Electron Spin in a Semiconductor Quantum Dot to a Nanosize Optical Cavity

    DEFF Research Database (Denmark)

    Majumdar, Arka; Nielsen, Per Kær; Bajcsy, Michal

    2013-01-01

    We propose a scheme to efficiently couple a single quantum dot electron spin to an optical nano-cavity, which enables us to simultaneously benefit from a cavity as an efficient photonic interface, as well as to perform high fidelity (nearly 100%) spin initialization and manipulation achievable in...

  12. Time-dependent quantum fluid density functional theory of hydrogen ...

    Indian Academy of Sciences (India)

    WINTEC

    GNLSE) of motion was earlier derived in our laboratory by combining density functional theory and quantum fluid dynamics in three- dimensional space. In continuation of the work reported previously, the GNLSE is applied to provide addi-.

  13. Time-dependent quantum fluid density functional theory of hydrogen ...

    Indian Academy of Sciences (India)

    dependent density; density functional theory; quantum fluid dynamics. ... (HHG) is also examined. The present approach goes beyond the linear response formalism and, in principle, calculates the TD electron density to all orders of change.

  14. Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles.

    Science.gov (United States)

    Tvrdy, Kevin; Frantsuzov, Pavel A; Kamat, Prashant V

    2011-01-04

    Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO(2), TiO(2), and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO(2)) were not the same as those which showed the highest photocurrent (TiO(2)). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency.

  15. Constructing and constraining wave functions for identical quantum particles

    Science.gov (United States)

    Sebens, Charles T.

    2016-11-01

    I address the problem of explaining why wave functions for identical particles must be either symmetric or antisymmetric (the symmetry dichotomy) within two interpretations of quantum mechanics which include particles following definite trajectories in addition to, or in lieu of, the wave function: Bohmian mechanics and Newtonian quantum mechanics (a.k.a. many interacting worlds). In both cases I argue that, if the interpretation is formulated properly, the symmetry dichotomy can be derived and need not be postulated.

  16. N-Level Quantum Systems and Legendre Functions

    OpenAIRE

    Mazurenko, A. S.; Savva, V. A.

    2001-01-01

    An excitation dynamics of new quantum systems of N equidistant energy levels in a monochromatic field has been investigated. To obtain exact analytical solutions of dynamic equations an analytical method based on orthogonal functions of a real argument has been proposed. Using the orthogonal Legendre functions we have found an exact analytical expression for a population probability amplitude of the level n. Various initial conditions for the excitation of N-level quantum systems have been co...

  17. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    Energy Technology Data Exchange (ETDEWEB)

    Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  18. Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

    International Nuclear Information System (INIS)

    Rau, E. I.; Orlikovskiy, N. A.; Ivanova, E. S.

    2012-01-01

    A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1–50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

  19. Improving the Performance of Semiconductor Sensor Devices Using Surface Functionalization

    Science.gov (United States)

    Rohrbaugh, Nathaniel W.

    As production and understanding of III-nitride growth has progressed, this class of material has been used for its semiconducting properties in the fields of computer processing, microelectronics, and LEDs. As understanding of materials properties has advanced, devices were fabricated to be sensitive to environmental surroundings such as pH, gas, or ionic concentration. Simultaneously the world of pharmaceuticals and environmental science has come to the age where the use of wearable devices and active environmental sensing can not only help us learn more about our surroundings, but help save lives. At the crossroads of these two fields work has been done in marrying the high stability and electrical properties of the III-nitrides with the needs of a growing sensor field for various environments and stimuli. Device architecture can only get one so far, and thus the need for well understood surface functionalization techniques has arisen in the field of III-nitride environmental sensing. Many existing schemes for functionalization involve chemistries that may be unfriendly to a biological environment, unstable in solution, or expensive to produce. One possible solution to these issues is the work presented here, which highlights a surface modification scheme utilizing phosphonic acid based chemistry and biomolecular attachment. This dissertation presents a set of studies and experiments quantifying and analyzing the response behaviors of AlGaN/GaN field effect transistor (FET) devices via their interfacial electronic properties. Additional investigation was done on the modification of these surfaces, effects of stressful environmental conditions, and the utility of the phosphonic acid surface treatments. Signals of AlGaN/GaN FETs were measured as IDrain values and in the earliest study an average signal increase of 96.43% was observed when surfaces were incubated in a solution of a known recognition peptide sequence (SVSVGMKPSPRP). This work showed that even without

  20. Model of fragmentation of the exciton inner ring in semiconductor quantum wells

    OpenAIRE

    Chernyuk, A. A.; Sugakov, V. I.; Tomylko, V. V.

    2016-01-01

    The appearance of the non-homogeneous structures of the indirect exciton density distribution in the region of the quantum well (in the region of the inner ring) is explained. The structure (the fragmentation) occurs due to the exciton condensed phase formation because of interaction between excitons. The formation of the structure is related with the non-equalibrity of the system, which is caused by the exciton finite lifetime and the presence of the pumpimg. The structure emerges in the sha...

  1. Rabi oscillations and self-induced transparency in InAs/InP quantum dot semiconductor optical amplifier operating at room temperature.

    Science.gov (United States)

    Karni, Ouri; Capua, Amir; Eisenstein, Gadi; Sichkovskyi, Vitalii; Ivanov, Vitalii; Reithmaier, Johann Peter

    2013-11-04

    We report direct observations of Rabi oscillations and self-induced transparency in a quantum dot optical amplifier operating at room temperature. The experiments make use of pulses whose durations are shorter than the coherence time which are characterized using Cross-Frequency-Resolved Optical Gating. A numerical model which solves the Maxwell and Schrödinger equations and accounts for the inhomogeneously broadened nature of the quantum dot gain medium confirms the experimental results. The model is also used to explain the relationship between the observability of Rabi oscillations, the pulse duration and the homogeneous and inhomogeneous spectral widths of the semiconductor.

  2. Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Malic, Ermin

    2008-09-02

    This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-{gamma} and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

  3. Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

    International Nuclear Information System (INIS)

    Malic, Ermin

    2008-01-01

    This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-Γ and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

  4. Ultrathin One- and Two-Dimensional Colloidal Semiconductor Nanocrystals: Pushing Quantum Confinement to the Limit

    Science.gov (United States)

    2017-01-01

    Research on ultrathin nanomaterials is one of the fastest developing areas in contemporary nanoscience. The field of ultrathin one- (1D) and two-dimensional (2D) colloidal nanocrystals (NCs) is still in its infancy, but offers the prospect of production of ultrathin nanomaterials in liquid-phase at relatively low costs, with versatility in terms of composition, size, shape, and surface control. In this Perspective, the state of the art in the field is concisely outlined and critically discussed to highlight the essential concepts and challenges. We start by presenting a brief overview of the ultrathin colloidal 1D and 2D semiconductor NCs prepared to date, after which the synthesis strategies and formation mechanisms of both 1D and 2D NCs are discussed. The properties of these low-dimensional materials are then reviewed, with emphasis on the optical properties of luminescent NCs. Finally, the future prospects for the field are addressed. PMID:28799764

  5. Next-Generation Theranostic Agents Based on Polyelectrolyte Microcapsules Encoded with Semiconductor Nanocrystals: Development and Functional Characterization.

    Science.gov (United States)

    Nifontova, Galina; Zvaigzne, Maria; Baryshnikova, Maria; Korostylev, Evgeny; Ramos-Gomes, Fernanda; Alves, Frauke; Nabiev, Igor; Sukhanova, Alyona

    2018-01-25

    Fabrication of polyelectrolyte microcapsules and their use as carriers of drugs, fluorescent labels, and metal nanoparticles is a promising approach to designing theranostic agents. Semiconductor quantum dots (QDs) are characterized by extremely high brightness and photostability that make them attractive fluorescent labels for visualization of intracellular penetration and delivery of such microcapsules. Here, we describe an approach to design, fabricate, and characterize physico-chemical and functional properties of polyelectrolyte microcapsules encoded with water-solubilized and stabilized with three-functional polyethylene glycol derivatives core/shell QDs. Developed microcapsules were characterized by dynamic light scattering, electrophoretic mobility, scanning electronic microscopy, and fluorescence and confocal microscopy approaches, providing exact data on their size distribution, surface charge, morphological, and optical characteristics. The fluorescence lifetimes of the QD-encoded microcapsules were also measured, and their dependence on time after preparation of the microcapsules was evaluated. The optimal content of QDs used for encoding procedure providing the optimal fluorescence properties of the encoded microcapsules was determined. Finally, the intracellular microcapsule uptake by murine macrophages was demonstrated, thus confirming the possibility of efficient use of developed system for live cell imaging and visualization of microcapsule transportation and delivery within the living cells.

  6. Next-Generation Theranostic Agents Based on Polyelectrolyte Microcapsules Encoded with Semiconductor Nanocrystals: Development and Functional Characterization

    Science.gov (United States)

    Nifontova, Galina; Zvaigzne, Maria; Baryshnikova, Maria; Korostylev, Evgeny; Ramos-Gomes, Fernanda; Alves, Frauke; Nabiev, Igor; Sukhanova, Alyona

    2018-01-01

    Fabrication of polyelectrolyte microcapsules and their use as carriers of drugs, fluorescent labels, and metal nanoparticles is a promising approach to designing theranostic agents. Semiconductor quantum dots (QDs) are characterized by extremely high brightness and photostability that make them attractive fluorescent labels for visualization of intracellular penetration and delivery of such microcapsules. Here, we describe an approach to design, fabricate, and characterize physico-chemical and functional properties of polyelectrolyte microcapsules encoded with water-solubilized and stabilized with three-functional polyethylene glycol derivatives core/shell QDs. Developed microcapsules were characterized by dynamic light scattering, electrophoretic mobility, scanning electronic microscopy, and fluorescence and confocal microscopy approaches, providing exact data on their size distribution, surface charge, morphological, and optical characteristics. The fluorescence lifetimes of the QD-encoded microcapsules were also measured, and their dependence on time after preparation of the microcapsules was evaluated. The optimal content of QDs used for encoding procedure providing the optimal fluorescence properties of the encoded microcapsules was determined. Finally, the intracellular microcapsule uptake by murine macrophages was demonstrated, thus confirming the possibility of efficient use of developed system for live cell imaging and visualization of microcapsule transportation and delivery within the living cells.

  7. Asymptotic functions and their application in quantum theory

    International Nuclear Information System (INIS)

    Khristov, Kh.Ya.; Damyanov, B.P.

    1979-01-01

    An asymptotic function introduced as a limit for a certain class of successions has been determined. The basic properties of the functions are given: continuity, differentiability, integrability. The fields of application of the asymptotic functions in the quantum field theory are presented. The shortcomings and potentialities of further development of the theory are enumerated

  8. Band-gap engineering of functional perovskites through quantum confinement and tunneling

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; Pandey, Mohnish; Thygesen, Kristian Sommer

    2015-01-01

    An optimal band gap that allows for a high solar-to-fuel energy conversion efficiency is one of the key factors to achieve sustainability. We investigate computationally the band gaps and optical spectra of functional perovskites composed of layers of the two cubic perovskite semiconductors BaSnO3...... and BaTaO2N. Starting from an indirect gap of around 3.3 eV for BaSnO3 and a direct gap of 1.8 eV for BaTaO2N, different layerings can be used to design a direct gap of the functional perovskite between 2.3 and 1.2 eV. The variations of the band gap can be understood in terms of quantum confinement...

  9. Wigner function and the probability representation of quantum states

    Directory of Open Access Journals (Sweden)

    Man’ko Margarita A.

    2014-01-01

    Full Text Available The relation of theWigner function with the fair probability distribution called tomographic distribution or quantum tomogram associated with the quantum state is reviewed. The connection of the tomographic picture of quantum mechanics with the integral Radon transform of the Wigner quasidistribution is discussed. The Wigner–Moyal equation for the Wigner function is presented in the form of kinetic equation for the tomographic probability distribution both in quantum mechanics and in the classical limit of the Liouville equation. The calculation of moments of physical observables in terms of integrals with the state tomographic probability distributions is constructed having a standard form of averaging in the probability theory. New uncertainty relations for the position and momentum are written in terms of optical tomograms suitable for directexperimental check. Some recent experiments on checking the uncertainty relations including the entropic uncertainty relations are discussed.

  10. Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots

    Science.gov (United States)

    Wang, Q. Q.; Muller, A.; Bianucci, P.; Rossi, E.; Xue, Q. K.; Takagahara, T.; Piermarocchi, C.; MacDonald, A. H.; Shih, C. K.

    2005-07-01

    Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during optical manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4ps and 10ps . Up to five periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the nonresonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.

  11. Spin and Optical Characterization of Defects in Group IV Semiconductors for Quantum Memory Applications

    Science.gov (United States)

    Rose, Brendon Charles

    This thesis is focused on the characterization of highly coherent defects in both silicon and diamond, particularly in the context of quantum memory applications. The results are organized into three parts based on the spin system: phosphorus donor electron spins in silicon, negatively charged nitrogen vacancy color centers in diamond (NV-), and neutrally charged silicon vacancy color centers in diamond (SiV0). The first part on phosphorus donor electron spins presents the first realization of strong coupling with spins in silicon. To achieve this, the silicon crystal was made highly pure and highly isotopically enriched so that the ensemble dephasing time, T2*, was long (10 micros). Additionally, the use of a 3D resonator aided in realizing uniform coupling, allowing for high fidelity spin ensemble manipulation. These two properties have eluded past implementations of strongly coupled spin ensembles and have been the limiting factor in storing and retrieving quantum information. Second, we characterize the spin properties of the NV- color center in diamond in a large magnetic field. We observe that the electron spin echo envelope modulation originating from the central 14N nuclear spin is much stronger at large fields and that the optically induced spin polarization exhibits a strong orientation dependence that cannot be explained by the existing model for the NV- optical cycle, we develop a modification of the existing model that reproduces the data in a large magnetic field. In the third part we perform characterization and stabilization of a new color center in diamond, SiV0, and find that it has attractive, highly sought-after properties for use as a quantum memory in a quantum repeater scheme. We demonstrate a new approach to the rational design of new color centers by engineering the Fermi level of the host material. The spin properties were characterized in electron spin resonance, revealing long spin relaxation and spin coherence times at cryogenic

  12. Super-Resolution Definition of Coordinates of Single Semiconductor Nanocrystal (Quantum Dot: Luminescence Intensity Dependence

    Directory of Open Access Journals (Sweden)

    Eremchev M. Yu.

    2015-01-01

    Full Text Available In this research a relation between the accuracy of restoration of the single quantum dots (QD CdSe/CdS/ZnS cross-cut coordinates and luminescence intensity was investigated. It was shown that the limit of the accuracy of determining the coordinates of a single QD for a considerable total amount of registered photons approaches its limiting value that is comparable to the size of the QD. It also means that the installation used in the research is mechanically stable enough to reach the limiting values of determination accuracy of point emitters coordinates.

  13. Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

    OpenAIRE

    Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.

    2016-01-01

    This work has been funded by Russian Scientific Foundation (Grant No. 14-12-01372) and State of Bavaria. We report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, a...

  14. Dissociation of Vertical Semiconductor Diatomic Artificial Molecules

    International Nuclear Information System (INIS)

    Pi, M.; Emperador, A.; Barranco, M.; Garcias, F.; Muraki, K.; Tarucha, S.; Austing, D. G.

    2001-01-01

    We investigate the dissociation of few-electron circular vertical semiconductor double quantum dot artificial molecules at 0T as a function of interdot distance. A slight mismatch introduced in the fabrication of the artificial molecules from nominally identical constituent quantum wells induces localization by offsetting the energy levels in the quantum dots by up to 2meV, and this plays a crucial role in the appearance of the addition energy spectra as a function of coupling strength particularly in the weak coupling limit

  15. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  16. Enriching 28Si beyond 99.9998 % for semiconductor quantum computing

    International Nuclear Information System (INIS)

    Dwyer, K J; Pomeroy, J M; Simons, D S; Steffens, K L; Lau, J W

    2014-01-01

    Using a laboratory-scale apparatus, we enrich 28 Si and produce material with 40 times less residual 29 Si than previously reported. Starting from natural abundance silane gas, we offer an alternative to industrial gas centrifuges for providing materials critical for long spin coherence times in quantum information devices. Using a mass spectrometry approach, silicon ions are produced from commercial silane gas and the isotopes are separated in a magnetic sector analyzer before deposition onto a Si(1 0 0) substrate. Isotope fractions for 29 Si and 30 Si of <1 × 10 −6 are found in the deposited films using secondary ion mass spectrometry. Additional assessments of the deposited films are also presented as we work to develop substrates and source material to support the growing silicon quantum computing community. Finally, we demonstrate modulation of the 29 Si concentration in a deposited film as a precursor to dual enrichment of heterostructures and compound materials such as 28 Si 74 Ge. (paper)

  17. Squeezing terahertz light into nanovolumes: Nanoantenna enhanced terahertz spectroscopy (NETS) of semiconductor quantum dots

    KAUST Repository

    Toma, Andrea

    2015-01-14

    Terahertz spectroscopy has vast potentialities in sensing a broad range of elementary excitations (e.g., collective vibrations of molecules, phonons, excitons, etc.). However, the large wavelength associated with terahertz radiation (about 300 μm at 1 THz) severely hinders its interaction with nano-objects, such as nanoparticles, nanorods, nanotubes, and large molecules of biological relevance, practically limiting terahertz studies to macroscopic ensembles of these compounds, in the form of thick pellets of crystallized molecules or highly concentrated solutions of nanomaterials. Here we show that chains of terahertz dipole nanoantennas spaced by nanogaps of 20 nm allow retrieving the spectroscopic signature of a monolayer of cadmium selenide quantum dots, a significant portion of the signal arising from the dots located within the antenna nanocavities. A Fano-like interference between the fundamental antenna mode and the phonon resonance of the quantum dots is observed, accompanied by an absorption enhancement factor greater than one million. NETS can find immediate applications in terahertz spectroscopic studies of nanocrystals and molecules at extremely low concentrations. Furthermore, it shows a practicable route toward the characterization of individual nano-objects at these frequencies.

  18. Squeezing terahertz light into nanovolumes: nanoantenna enhanced terahertz spectroscopy (NETS) of semiconductor quantum dots.

    Science.gov (United States)

    Toma, Andrea; Tuccio, Salvatore; Prato, Mirko; De Donato, Francesco; Perucchi, Andrea; Di Pietro, Paola; Marras, Sergio; Liberale, Carlo; Proietti Zaccaria, Remo; De Angelis, Francesco; Manna, Liberato; Lupi, Stefano; Di Fabrizio, Enzo; Razzari, Luca

    2015-01-14

    Terahertz spectroscopy has vast potentialities in sensing a broad range of elementary excitations (e.g., collective vibrations of molecules, phonons, excitons, etc.). However, the large wavelength associated with terahertz radiation (about 300 μm at 1 THz) severely hinders its interaction with nano-objects, such as nanoparticles, nanorods, nanotubes, and large molecules of biological relevance, practically limiting terahertz studies to macroscopic ensembles of these compounds, in the form of thick pellets of crystallized molecules or highly concentrated solutions of nanomaterials. Here we show that chains of terahertz dipole nanoantennas spaced by nanogaps of 20 nm allow retrieving the spectroscopic signature of a monolayer of cadmium selenide quantum dots, a significant portion of the signal arising from the dots located within the antenna nanocavities. A Fano-like interference between the fundamental antenna mode and the phonon resonance of the quantum dots is observed, accompanied by an absorption enhancement factor greater than one million. NETS can find immediate applications in terahertz spectroscopic studies of nanocrystals and molecules at extremely low concentrations. Furthermore, it shows a practicable route toward the characterization of individual nano-objects at these frequencies.

  19. Wave function of the quantum black hole

    CERN Document Server

    Brustein, Ram

    2012-01-01

    We show that the Wald Noether charge entropy is canonically conjugate to the opening angle at the horizon. Using this canonical relation we extend the Wheeler-DeWitt equation to a Schroedinger equation in the opening angle, following Carlip and Teitelboim. We solve the equation in the semiclassical approximation by using the correspondence principle and find that the solutions are minimal uncertainty wavefunctions with a continuous spectrum for the entropy and therefore also of the area of the black hole horizon. The fact that the opening angle fluctuates away from its classical value of 2 pi indicates that the quantum black hole is a superposition of horizonless states. The classical geometry with a horizon serves only to evaluate quantum expectation values in the strict classical limit.

  20. Optimized Perturbation Theory for Wave Functions of Quantum Systems

    International Nuclear Information System (INIS)

    Hatsuda, T.; Tanaka, T.; Kunihiro, T.

    1997-01-01

    The notion of the optimized perturbation, which has been successfully applied to energy eigenvalues, is generalized to treat wave functions of quantum systems. The key ingredient is to construct an envelope of a set of perturbative wave functions. This leads to a condition similar to that obtained from the principle of minimal sensitivity. Applications of the method to the quantum anharmonic oscillator and the double well potential show that uniformly valid wave functions with correct asymptotic behavior are obtained in the first-order optimized perturbation even for strong couplings. copyright 1997 The American Physical Society

  1. Green’s functions in perturbative quantum gravity

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, Sudhaker, E-mail: sudhakerupadhyay@gmail.com [Department of Physics, Indian Institute of Technology Kanpur, 208016, Kanpur (India); Mandal, Bhabani Prasad, E-mail: bhabani.mandal@gmail.com [Department of Physics, Banaras Hindu University, 221005, Varanasi (India)

    2015-07-17

    We show that the Green’s functions in a non-linear gauge in the theory of perturbative quantum gravity is expressed as a series in terms of those in linear gauges. This formulation also holds for operator Green’s functions. We further derive the explicit relation between the Green’s functions in the theory of perturbative quantum gravity in a pair of arbitrary gauges. This process involves some sort of modified FFBRST transformations which are derivable from infinitesimal field-dependent BRST transformations.

  2. Green's functions in perturbative quantum gravity

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, Sudhaker [Indian Institute of Technology Kanpur, Department of Physics, Kanpur (India); Mandal, Bhabani Prasad [Banaras Hindu University, Department of Physics, Varanasi (India)

    2015-07-15

    We show that the Green's functions in a non-linear gauge in the theory of perturbative quantum gravity is expressed as a series in terms of those in linear gauges. This formulation also holds for operator Green's functions. We further derive the explicit relation between the Green's functions in the theory of perturbative quantum gravity in a pair of arbitrary gauges. This process involves some sort of modified FFBRST transformations which are derivable from infinitesimal field-dependent BRST transformations. (orig.)

  3. Model of fragmentation of the exciton inner ring in semiconductor quantum wells

    Science.gov (United States)

    Chernyuk, A. A.; Sugakov, V. I.; Tomylko, V. V.

    2014-11-01

    The appearance of nonhomogeneous structures of the indirect exciton density distribution in the region of the quantum well (in the region of the inner ring) is explained. The structure (the fragmentation) occurs due to the exciton condensed phase formation because of the interaction between excitons. The formation of the struc-ture is related with the nonequalibrity of the system, which is caused by the exciton finite lifetime and the presence of the pumping. The structure emerges in the shape of a set of islands or circles of the condensed phase. The structure type depends on the pumping intensity, the size of the laser spot, and disappears with increasing the temperature. The merging of two structures, created by different laser spots, is investigated at decreasing the distance between the centers of the spots.

  4. Optical studies of charged excitons in II-VI semiconductor quantum wells

    CERN Document Server

    Kossacki, P

    2003-01-01

    A brief review is given of optical studies of doped II-VI quantum wells. The properties of exciton states, neutral as well as positively and negatively charged, are discussed. A wide range of optical measurements is presented: CW as well as picosecond and femtosecond time-resolved absorption, photoluminescence (PL) and PL excitation. The experiments were performed at various carrier concentrations (> 10 sup 1 sup 1 cm sup - sup 2) and temperatures (up to a few tens of kelvins). This review is limited to zero or low magnetic fields, used only to polarize spins of carriers. We discuss the obtained values of various fundamental parameters of the excitonic states: energies, optical transition probabilities and characteristic times of their formation, thermalization and decay. (topical review)

  5. Gauge fixing in the partition function for generalized quantum dynamics

    International Nuclear Information System (INIS)

    Adler, S.L.

    1998-01-01

    We discuss the problem of gauge fixing for the partition function in generalized quantum (or trace) dynamics, deriving analogs of the De Witt endash Faddeev endash Popov procedure and of the BRST invariance familiar in the functional integral context. copyright 1998 American Institute of Physics

  6. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots.

    Science.gov (United States)

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-06-08

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks.

  7. Quantum Hash function and its application to privacy amplification in quantum key distribution, pseudo-random number generation and image encryption

    Science.gov (United States)

    Yang, Yu-Guang; Xu, Peng; Yang, Rui; Zhou, Yi-Hua; Shi, Wei-Min

    2016-01-01

    Quantum information and quantum computation have achieved a huge success during the last years. In this paper, we investigate the capability of quantum Hash function, which can be constructed by subtly modifying quantum walks, a famous quantum computation model. It is found that quantum Hash function can act as a hash function for the privacy amplification process of quantum key distribution systems with higher security. As a byproduct, quantum Hash function can also be used for pseudo-random number generation due to its inherent chaotic dynamics. Further we discuss the application of quantum Hash function to image encryption and propose a novel image encryption algorithm. Numerical simulations and performance comparisons show that quantum Hash function is eligible for privacy amplification in quantum key distribution, pseudo-random number generation and image encryption in terms of various hash tests and randomness tests. It extends the scope of application of quantum computation and quantum information.

  8. Quantum Hash function and its application to privacy amplification in quantum key distribution, pseudo-random number generation and image encryption

    Science.gov (United States)

    Yang, Yu-Guang; Xu, Peng; Yang, Rui; Zhou, Yi-Hua; Shi, Wei-Min

    2016-01-01

    Quantum information and quantum computation have achieved a huge success during the last years. In this paper, we investigate the capability of quantum Hash function, which can be constructed by subtly modifying quantum walks, a famous quantum computation model. It is found that quantum Hash function can act as a hash function for the privacy amplification process of quantum key distribution systems with higher security. As a byproduct, quantum Hash function can also be used for pseudo-random number generation due to its inherent chaotic dynamics. Further we discuss the application of quantum Hash function to image encryption and propose a novel image encryption algorithm. Numerical simulations and performance comparisons show that quantum Hash function is eligible for privacy amplification in quantum key distribution, pseudo-random number generation and image encryption in terms of various hash tests and randomness tests. It extends the scope of application of quantum computation and quantum information. PMID:26823196

  9. Single-walled carbon nanohorns decorated with semiconductor quantum dots to evaluate intracellular transport

    Science.gov (United States)

    Zimmermann, Kristen A.; Inglefield, David L.; Zhang, Jianfei; Dorn, Harry C.; Long, Timothy E.; Rylander, Christopher G.; Rylander, M. Nichole

    2014-01-01

    Single-walled carbon nanohorns (SWNHs) have great potential to enhance thermal and chemotherapeutic drug efficiencies for cancer therapies. Despite their diverse capabilities, minimal research has been conducted so far to study nanoparticle intracellular transport, which is an important step in designing efficient therapies. SWNHs, like many other carbon nanomaterials, do not have inherent fluorescence properties making intracellular transport information difficult to obtain. The goals of this project were to (1) develop a simple reaction scheme to decorate the exohedral surface of SWNHs with fluorescent quantum dots (QDs) and improve conjugate stability, and (2) evaluate SWNH-QD conjugate cellular uptake kinetics and localization in various cancer cell lines of differing origins and morphologies. In this study, SWNHs were conjugated to CdSe/ZnS core/shell QDs using a unique approach to carbodiimide chemistry. Transmission electron microscopy and electron dispersive spectroscopy verified the conjugation of SWNHs and QDs. Cellular uptake kinetics and efficiency were characterized in three malignant cell lines: U-87 MG (glioblastoma), MDA-MB-231 (breast cancer), and AY-27 (bladder transitional cell carcinoma) using flow cytometry. Cellular distribution was verified by confocal microscopy, and cytotoxicity was also evaluated using an alamarBlue assay. Results indicate that cellular uptake kinetics and efficiency are highly dependent on cell type, highlighting the significance of studying nanoparticle transport at the cellular level. Nanoparticle intracellular transport investigations may provide information to optimize treatment parameters (e.g., SWNH concentration, treatment time, etc.) depending on tumor etiology.

  10. Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells

    Directory of Open Access Journals (Sweden)

    Mahshid Mokhtarnejad

    2017-01-01

    Full Text Available This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the one-dimensional photonic crystal, the optical stark effect (OSE was considered on it. Due to the OSE on virtual exciton levels, the switching time can be in the order of picoseconds. Moreover, it is demonstrated that, by introducing errors in width of barrier and well as well as by inserting defect, the reflectivity is reduced. Thus, by employing the mechanism of stark effect MQWs band-gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results, we observe that the reflectivity of MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum reflectivity of 96%.

  11. The role of hydrostatic pressure and temperature on bound polaron in semiconductor quantum dot

    International Nuclear Information System (INIS)

    El Moussaouy, A.; Ouchani, N.

    2014-01-01

    We studied theoretically the effects of hydrostatic pressure and temperature on the binding energy of shallow hydrogenic impurity in a cylindrical quantum dot (QD) using a variational approach within the effective mass approximation. The hydrostatic stress was applied along the QD growth axis. The interactions between the charge carriers and confined longitudinal optical (LO) phonon modes are taken into account. The numerical computation for GaAs/Ga 1−x Al x As QD has shown that the binding energy with and without the polaronic correction depends on the location of the impurity and the pressure effect and it is more pronounced for impurities in the QD center. Both the binding energy and the polaronic contribution increase linearly with increasing stress. For each pressure value, these energies are also found to decrease as the temperature increases. The results obtained show that in experimental studies of optical and electronic properties of QDs, the effects of pressure, temperature and polaronic correction on donor impurity binding energy should be taken into consideration

  12. Magnetism at the Interface of Magnetic Oxide and Nonmagnetic Semiconductor Quantum Dots.

    Science.gov (United States)

    Saha, Avijit; Viswanatha, Ranjani

    2017-03-28

    Engineering interfaces specifically in quantum dot (QD) heterostructures provide several prospects for developing multifunctional building block materials. Precise control over internal structure by chemical synthesis offers a combination of different properties in QDs and allows us to study their fundamental properties, depending on their structure. Herein, we studied the interface of magnetic/nonmagnetic Fe 3 O 4 /CdS QD heterostructures. In this work, we demonstrate the decrease in the size of the magnetic core due to annealing at high temperature by the decrease in saturation magnetization and blocking temperature. Furthermore, surprisingly, in a prominently optically active and magnetically inactive material such as CdS, we observe the presence of substantial exchange bias in spite of the nonmagnetic nature of CdS QDs. The presence of exchange bias was proven by the increase in magnetic anisotropy as well as the presence of exchange bias field (H E ) during the field-cooled magnetic measurements. This exchange coupling was eventually traced to the in situ formation of a thin antiferromagnetic FeS layer at the interface. This is verified by the study of Fe local structure using X-ray absorption fine structure spectroscopy, demonstrating the importance of interface engineering in QDs.

  13. Efficient quantum algorithm for computing n-time correlation functions.

    Science.gov (United States)

    Pedernales, J S; Di Candia, R; Egusquiza, I L; Casanova, J; Solano, E

    2014-07-11

    We propose a method for computing n-time correlation functions of arbitrary spinorial, fermionic, and bosonic operators, consisting of an efficient quantum algorithm that encodes these correlations in an initially added ancillary qubit for probe and control tasks. For spinorial and fermionic systems, the reconstruction of arbitrary n-time correlation functions requires the measurement of two ancilla observables, while for bosonic variables time derivatives of the same observables are needed. Finally, we provide examples applicable to different quantum platforms in the frame of the linear response theory.

  14. Green-function approach for scattering quantum walks

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, F. M. [Departamento de Matematica e Estatistica, Universidade Estadual de Ponta Grossa, 84030-900 Ponta Grossa-PR (Brazil); Luz, M. G. E. da [Departamento de Fisica, Universidade Federal do Parana, C.P. 19044, 81531-980 Curitiba-PR (Brazil)

    2011-10-15

    In this work a Green-function approach for scattering quantum walks is developed. The exact formula has the form of a sum over paths and always can be cast into a closed analytic expression for arbitrary topologies and position-dependent quantum amplitudes. By introducing the step and path operators, it is shown how to extract any information about the system from the Green function. The method's relevant features are demonstrated by discussing in detail an example, a general diamond-shaped graph.

  15. Nanocrystal quantum dots

    CERN Document Server

    Klimov, Victor I

    2010-01-01

    ""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

  16. Coherent optoelectronics with single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zrenner, A; Ester, P; Michaelis de Vasconcellos, S; Huebner, M C; Lackmann, L; Stufler, S [Universitaet Paderborn, Department Physik, Warburger Strasse 100, D-33098 Paderborn (Germany); Bichler, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)], E-mail: zrenner@mail.upb.de

    2008-11-12

    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  17. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  18. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...... and specifications. We have measured ultrafast gain and index dynamics of SOAs in pump-and-probe experiments applying 100 fs pulses and a heterodyne detection scheme, where both amplitude and phase of the probe pulses are determined. The gain depletion, and associated index change, and the subsequent recovery afte...

  19. Flexible optical clock recovery utilizing a multi-function semiconductor fiber laser

    Science.gov (United States)

    Feng, H.; Zhao, W.; Xie, X. P.; Qian, F. C.; Wang, W.; Huang, X.; Hu, H.

    2013-08-01

    We demonstrate a multi-function fiber laser based on cross-gain modulation in a semiconductor optical amplifier (SOA). Depending on the input signals, the fiber cavity can emit a continuous wave (CW) laser, mode-locked pulses, or act as a clock recovery device. With an extra CW light overcoming the pattern effect in the clock recovery process, a 10-GHz synchronous clock sequence with <0.1 power fluctuation and <120-fs timing jitter is extracted from the transmission return-to-zero data stream. We further analyze the recovered clock properties as a function of the input signal, and find that the clock recovery system presents good stability over a large range of input signal characteristics. The multi-function fiber laser exhibits the advantages of compact configuration and low cost, which is very convenient and attractive for optical communications and signal processing.

  20. Effect of nanostructured electrode architecture and semiconductor deposition strategy on the photovoltaic performance of quantum dot sensitized solar cells

    International Nuclear Information System (INIS)

    Samadpour, Mahmoud; Giménez, Sixto; Boix, Pablo P.; Shen, Qing; Calvo, Mauricio E.; Taghavinia, Nima; Azam Iraji zad; Toyoda, Taro; Míguez, Hernán

    2012-01-01

    Highlights: ► Electrode nanostructure and quantum dot growth method have a clear influence in the final quantum dot solar cell performance. ► Higher V oc values are systematically obtained for TiO 2 morphologies with decreasing surface area. ► Higher V oc values are systematically obtained for cells using CBD growth method in comparison with SILAR method. - Abstract: Here we analyze the effect of two relevant aspects related to cell preparation on quantum dot sensitized solar cells (QDSCs) performance: the architecture of the TiO 2 nanostructured electrode and the growth method of quantum dots (QD). Particular attention is given to the effect on the photovoltage, V oc , since this parameter conveys the main current limitation of QDSCs. We have analyzed electrodes directly sensitized with CdSe QDs grown by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR). We have carried out a systematic study comprising structural, optical, photophysical and photoelectrochemical characterization in order to correlate the material properties of the photoanodes with the functional performance of the manufactured QDSCs. The results show that the correspondence between photovoltaic conversion efficiency and the surface area of TiO 2 depends on the QDs deposition method. Higher V oc values are systematically obtained for TiO 2 morphologies with decreasing surface area and for cells using CBD growth method. This is systematically correlated to a higher recombination resistance of CBD sensitized electrodes. Electron injection kinetics from QDs into TiO 2 also depends on both the TiO 2 structure and the QDs deposition method, being systematically faster for CBD. Only for electrodes prepared with small TiO 2 nanoparticles SILAR method presents better performance than CBD, indicating that the small pore size disturb the CBD growth method. These results have important implications for the optimization of QDSCs.

  1. Functional methods and mappings of dissipative quantum systems

    International Nuclear Information System (INIS)

    Baur, H.

    2006-01-01

    In the first part of this work we extract the algebraic structure behind the method of the influence functional in the context of dissipative quantum mechanics. Special emphasis was put on the transition from a quantum mechanical description to a classical one, since it allows a deeper understanding of the measurement-process. This is tightly connected with the transition from a microscopic to a macroscopic world where the former one is described by the rules of quantum mechanics whereas the latter follows the rules of classical mechanics. In addition we show how the results of the influence functional method can be interpreted as a stochastical process, which in turn allows an easy comparison with the well known time development of a quantum mechanical system by use of the Schroedinger equation. In the following we examine the tight-binding approximation of models of which their hamiltionian shows discrete eigenstates in position space and where transitions between those states are suppressed so that propagation either is described by tunneling or by thermal activation. In the framework of dissipative quantum mechanics this leads to a tremendous simplification of the effective description of the system since instead of looking at the full history of all paths in the path integral description, we only have to look at all possible jump times and the possible corresponding set of weights for the jump direction, which is much easier to handle both analytically and numerically. In addition we deal with the mapping and the connection of dissipative quantum mechanical models with ones in quantum field theory and in particular models in statistical field theory. As an example we mention conformal invariance in two dimensions which always becomes relevant if a statistical system only has local interaction and is invariant under scaling. (orig.)

  2. Phase representation of quantum-optical systems via nonnegative quantum distribution function

    International Nuclear Information System (INIS)

    Chizhov, A.V.; Gusev, A.A.; Vinitskij, S.I.; Sevast'yanov, L.A.

    2007-01-01

    We propose a new method for describing phase distributions of nonclassical states in optical systems based on the nonnegative quantum distribution function. A comparison of the proposed method with other known methods such as the Pegg-Barnett and operational ones is given

  3. Design and Functionalization of the NIR-Responsive Photothermal Semiconductor Nanomaterials for Cancer Theranostics.

    Science.gov (United States)

    Huang, Xiaojuan; Zhang, Wenlong; Guan, Guoqiang; Song, Guosheng; Zou, Rujia; Hu, Junqing

    2017-10-17

    Despite the development of medical technology, cancer still remains a great threat to the survival of people all over the world. Photothermal therapy (PTT) is a minimally invasive method for selective photothermal ablation of cancer cells without damages to normal cells. Recently, copper chalcogenide semiconductors have emerged as a promising photothermal agent attributed to strong absorbance in the near-infrared (NIR) region and high photothermal conversion efficiency. An earlier study witnessed a rapid increase in their development for cancer therapy, including CuS, Cu 2-x Se and CuTe nanocrystals. However, a barrier is that the minimum laser power intensity for effective PTT is still significantly higher than the conservative limit for human skin exposure. Improving the photothermal conversion efficiency and reducing the laser power density has become a direction for the development of PTT. Furthermore, in an effort to improve the therapeutic efficacy, many multimode therapeutic nanostuctures have been formulated by integrating the photothermal agents with antitumor drugs, photosensitizers, or radiosensitizers, resulting in a synergistic effect. Various functional materials also have been absorbed, attached, encapsulated, or coated on the photothermal nanostructures, including fluorescence, computed tomography, magnetic resonance imaging, realizing cancer diagnosis, tumor location, site-specific therapy, and evaluation of therapeutic responses via incorporation of diagnosis and treatment. In this Account, we present an overview of the NIR-responsive photothermal semiconductor nanomaterials for cancer theranostics with a focus on their design and functionalization based on our own work. Our group has developed a series of chalcogenides with greatly improved NIR photoabsorption as photothermal agents, allowing laser exposure within regulatory limits. We also investigated the photothermal bioapplications of hypotoxic oxides including WO 3-x , MoO 3-x , and RuO 2

  4. Photoexcited transients in disordered semiconductors: Quantum coherence at very short to intermediate times

    Czech Academy of Sciences Publication Activity Database

    Kalvová, Anděla; Velický, Bedřich

    2002-01-01

    Roč. 65, č. 15 (2002), s. 155329-1 - 155329-23 ISSN 0163-1829 R&D Projects: GA ČR GA202/00/0643 Institutional research plan: CEZ:AV0Z1010914 Keywords : Particle correlation function * Kadanoff-Baym equations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  5. Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors

    International Nuclear Information System (INIS)

    Mkhitaryan, V. V.; Dobrovitski, V. V.

    2017-01-01

    3D printing of materials with active functional groups can provide custom-designed structures that promote chemical conversions. Herein, catalytically active architectures were produced by photopolymerizing bifunctional molecules using a commercial stereolithographic 3D printer. Functionalities in the monomers included a polymerizable vinyl group to assemble the 3D structures and a secondary group to provide them with active sites. The 3D-printed architectures containing accessible carboxylic acid, amine, and copper carboxylate functionalities were catalytically active for the Mannich, aldol, and Huisgen cycloaddition reactions, respectively. The functional groups in the 3D-printed structures were also amenable to post-printing chemical modification. As proof of principle, chemically active cuvette adaptors were 3D printed and used to measure in situ the kinetics of a heterogeneously catalyzed Mannich reaction in a conventional solution spectrophotometer. In addition, 3D-printed millifluidic devices with catalytically active copper carboxylate complexes were used to promote azide-alkyne cycloaddition under flow conditions. The importance of controlling the 3D architecture of the millifluidic devices was evidenced by enhancing reaction conversion upon increasing the complexity of the 3D prints.

  6. Time-dependent quantum fluid density functional theory of hydrogen ...

    Indian Academy of Sciences (India)

    WINTEC

    derived in our laboratory by combining density functional theory and quantum fluid dynamics in three- dimensional space. In continuation of the .... repulsion, electron-nuclear Coulomb attraction, ex- change and correlation interactions, ..... Eberly J H, Grobe R, Law C K and Su Q 1992 Adv. At. Mol. Opt. Phys. Suppl. 1 301. 8.

  7. Time-dependent quantum fluid density functional theory of hydrogen ...

    Indian Academy of Sciences (India)

    A time-dependent generalized non-linear Schrödinger equation (GNLSE) of motion was earlier derived in our laboratory by combining density functional theory and quantum fluid dynamics in threedimensional space. In continuation of the work reported previously, the GNLSE is applied to provide additional knowledge on ...

  8. Density functional approximation for spin dependent quantum transport in magnetic nano structures

    International Nuclear Information System (INIS)

    Nyunt, Khine

    2009-01-01

    In quasi-classical theoretical framework, the transport of electrons and holes in semiconductor devices is treated with the Boltzmann transport equation or quantum-mechanical energy band theory - viz., the effective mass approximation and the random phase approximation. On the other hand, in the mesoscopic, nano electronic devices, for three- and lower- dimensional structures with nanometer scaling, the wave properties, spin, charge and the interactions between spin and charge of electrons are fully utilized, such as in artificial mini-Brillouin zones, quantum size effects, Coulomb blockade of single-electron tunneling and spin-polarized giant magnetoresistance tunneling. The complexity associated with the classical quantum-mechanical formalism in the study of transport in magnetic nano structures can be avoided by applying the so-called, Hohenberg-Kohns density functional theory. In particular, the N-electron problem is formulated as N one-electron equations where each electron interacts with all other electrons via an effective exchange-correlation potential. These interactions are augmented using the electron charge density. Plane wave sets and total energy pseudo-potential methods can be used self-consistently, to solve the Kohn-Sham one-electron equations. Because of the limitations of quasi-classical theory, it is more appropriate to treat the magneto-transport problem in nano structures by using quantum many-body theory. The starting point of the quantum transport theory is to take an external field as a perturbation for the many-particle system in equilibrium. This leads to a linear response and gives corresponding transport coefficients. One useful application of the Greens function techniques in quantum magneto-transport is to convert a homogeneous differential equation into an integral equation, viz., as in the time-dependent Schrodinger equation. We have applied to scattering of nano structural defects (impurities) in the electron gas (metal) as many

  9. Chameleon fields, wave function collapse and quantum gravity

    International Nuclear Information System (INIS)

    Zanzi, A

    2015-01-01

    Chameleon fields are quantum (usually scalar) fields, with a density-dependent mass. In a high-density environment, the mass of the chameleon is large. On the contrary, in a small-density environment (e.g. on cosmological distances), the chameleon is very light. A model where the collapse of the wave function is induced by chameleon fields is presented. During this analysis, a Chameleonic Equivalence Principle (CEP) will be formulated: in this model, quantum gravitation is equivalent to a conformal anomaly. Further research efforts are necessary to verify whether this proposal is compatible with phenomeno logical constraints. (paper)

  10. Self-Consistent Hybrid Functional Calculations: Implications for Structural, Electronic, and Optical Properties of Oxide Semiconductors

    Science.gov (United States)

    Fritsch, Daniel; Morgan, Benjamin J.; Walsh, Aron

    2017-01-01

    The development of new exchange-correlation functionals within density functional theory means that increasingly accurate information is accessible at moderate computational cost. Recently, a newly developed self-consistent hybrid functional has been proposed (Skone et al., Phys. Rev. B 89:195112, 2014), which allows for a reliable and accurate calculation of material properties using a fully ab initio procedure. Here, we apply this new functional to wurtzite ZnO, rutile SnO2, and rocksalt MgO. We present calculated structural, electronic, and optical properties, which we compare to results obtained with the PBE and PBE0 functionals. For all semiconductors considered here, the self-consistent hybrid approach gives improved agreement with experimental structural data relative to the PBE0 hybrid functional for a moderate increase in computational cost, while avoiding the empiricism common to conventional hybrid functionals. The electronic properties are improved for ZnO and MgO, whereas for SnO2 the PBE0 hybrid functional gives the best agreement with experimental data.

  11. Two-point functions in (loop) quantum cosmology

    Energy Technology Data Exchange (ETDEWEB)

    Calcagni, Gianluca; Oriti, Daniele [Max-Planck-Institute for Gravitational Physics (Albert Einstein Institute), Am Muehlenberg 1, D-14476 Golm (Germany); Gielen, Steffen [Max-Planck-Institute for Gravitational Physics (Albert Einstein Institute), Am Muehlenberg 1, D-14476 Golm (Germany); DAMTP, Centre for Mathematical Sciences, Wilberforce Road, Cambridge CB3 0WA (United Kingdom)

    2011-07-01

    We discuss the path-integral formulation of quantum cosmology with a massless scalar field as a sum-over-histories of volume transitions, with particular but non-exclusive reference to loop quantum cosmology (LQC). Exploiting the analogy with the relativistic particle, we give a complete overview of the possible two-point functions, pointing out the choices involved in their definitions, deriving their vertex expansions and the composition laws they satisfy. We clarify the origin and relations of different quantities previously defined in the literature, in particular the tie between definitions using a group averaging procedure and those in a deparametrized framework. Finally, we draw some conclusions about the physics of a single quantum universe (where there exist superselection rules on positive- and negative-frequency sectors and different choices of inner product are physically equivalent) and multiverse field theories where the role of these sectors and the inner product are reinterpreted.

  12. Two-point functions in (loop) quantum cosmology

    Energy Technology Data Exchange (ETDEWEB)

    Calcagni, Gianluca; Gielen, Steffen; Oriti, Daniele, E-mail: calcagni@aei.mpg.de, E-mail: gielen@aei.mpg.de, E-mail: doriti@aei.mpg.de [Max Planck Institute for Gravitational Physics (Albert Einstein Institute), Am Muehlenberg 1, D-14476 Golm (Germany)

    2011-06-21

    The path-integral formulation of quantum cosmology with a massless scalar field as a sum-over-histories of volume transitions is discussed, with particular but non-exclusive reference to loop quantum cosmology. Exploiting the analogy with the relativistic particle, we give a complete overview of the possible two-point functions, pointing out the choices involved in their definitions, deriving their vertex expansions and the composition laws they satisfy. We clarify the origin and relations of different quantities previously defined in the literature, in particular the tie between definitions using a group averaging procedure and those in a deparametrized framework. Finally, we draw some conclusions about the physics of a single quantum universe (where there exist superselection rules on positive- and negative-frequency sectors and different choices of inner product are physically equivalent) and multiverse field theories where the role of these sectors and the inner product are reinterpreted.

  13. Multiconfigurational Green's function approaches in quantum chemistry

    International Nuclear Information System (INIS)

    Yeager, D.L.

    1984-01-01

    The author discusses multiconfigurational Green's function techniques and generalizations. In particular he is interested in developing and applying these techniques for isolated atoms and small molecules. Furthermore, he develops formalisms that are fairly clear, accurate, and capable of being applied to open-shell and highly-correlated systems as well as to closed-shell systems with little electronic correlation. The two kinds of Green's functions that this article discusses are the single-particle Green's function and the retarded two-time Green's function in the energy representation. The poles of the former give the ionization potentials and electron affinities while the poles of the latter give the excitation energies. The multiconfigurational approximations are known as the multiconfigurational electron propagator (MCEP) and the multiconfigurational time-dependent Hartree-Fock (MCTDHF) (also known as the multiconfigurational random phase approximation (MCRPA) or the multiconfigurational linear response), respectively. 44 references

  14. Tuning electronic properties in graphene quantum dots by chemical functionalization: Density functional theory calculations

    Science.gov (United States)

    Abdelsalam, Hazem; Elhaes, Hanan; Ibrahim, Medhat A.

    2018-03-01

    The energy gap and dipole moment of chemically functionalized graphene quantum dots are investigated by density functional theory. The energy gap can be tuned through edge passivation by different elements or groups. Edge passivation by oxygen considerably decreases the energy gap in hexagonal nanodots. Edge states in triangular quantum dots can also be manipulated by passivation with fluorine. The dipole moment depends on: (a) shape and edge termination of the quantum dot, (b) attached group, and (c) position to which the groups are attached. Depending on the position of attached groups, the total dipole can be increased, decreased, or eliminated.

  15. Simulational studies of epitaxial semiconductor superlattices: Quantum dynamical phenomena in ac and dc electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Reynolds, Joseph [Iowa State Univ., Ames, IA (United States)

    1997-10-08

    Using high-accuracy numerical methods the author investigates the dynamics of independent electrons in both ideal and realistic superlattices subject to arbitrary ac and/or dc electric fields. For a variety of superlattice potentials, optically excited initial wave packets, and combinations of ac and dc electric fields, he numerically solves the time-dependent Schroedinger equation. In the case of ideal periodic superlattice potentials, he investigates a long list of dynamical phenomena involving multiple miniband transitions and time-dependent electric fields. These include acceleration effects associated with interminiband transitions in strong fields, Zener resonances between minibands, dynamic localization with ac fields, increased single-miniband transport with an auxiliary resonant ac field, and enhanced or suppressed interminiband probability exchange using an auxiliary ac field. For all of the cases studied, the resulting time-dependent wave function is analyzed by projecting the data onto convenient orthonormal bases. This allows a detailed comparison with approximately analytic treatments. In an effort to explain the rapid decay of experimentally measured Bloch oscillation (BO) signals the author incorporates a one-dimensional representation of interface roughness (IR) into their superlattice potential. He shows that as a result of IR, the electron dynamics can be characterized in terms of many discrete, incommensurate frequencies near the Block frequency. Chapters 2, 3, 4 and 5 have been removed from this report and will be processed separately.

  16. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  17. An enzymatically-sensitized sequential and concentric energy transfer relay self-assembled around semiconductor quantum dots.

    Science.gov (United States)

    Samanta, Anirban; Walper, Scott A; Susumu, Kimihiro; Dwyer, Chris L; Medintz, Igor L

    2015-05-07

    The ability to control light energy within de novo nanoscale structures and devices will greatly benefit their continuing development and ultimate application. Ideally, this control should extend from generating the light itself to its spatial propagation within the device along with providing defined emission wavelength(s), all in a stand-alone modality. Here we design and characterize macromolecular nanoassemblies consisting of semiconductor quantum dots (QDs), several differentially dye-labeled peptides and the enzyme luciferase which cumulatively demonstrate many of these capabilities by engaging in multiple-sequential energy transfer steps. To create these structures, recombinantly-expressed luciferase and the dye-labeled peptides were appended with a terminal polyhistidine sequence allowing for controlled ratiometric self-assembly around the QDs via metal-affinity coordination. The QDs serve to provide multiple roles in these structures including as central assembly platforms or nanoscaffolds along with acting as a potent energy harvesting and transfer relay. The devices are activated by addition of coelenterazine H substrate which is oxidized by luciferase producing light energy which sensitizes the central 625 nm emitting QD acceptor by bioluminescence resonance energy transfer (BRET). The sensitized QD, in turn, acts as a relay and transfers the energy to a first peptide-labeled Alexa Fluor 647 acceptor dye displayed on its surface. This dye then transfers energy to a second red-shifted peptide-labeled dye acceptor on the QD surface through a second concentric Förster resonance energy transfer (FRET) process. Alexa Fluor 700 and Cy5.5 are both tested in the role of this terminal FRET acceptor. Photophysical analysis of spectral profiles from the resulting sequential BRET-FRET-FRET processes allow us to estimate the efficiency of each of the transfer steps. Importantly, the efficiency of each step within this energy transfer cascade can be controlled to

  18. Inorganic Chemistry Solutions to Semiconductor Nanocrystal Problems

    Energy Technology Data Exchange (ETDEWEB)

    Alvarado, Samuel R. [Ames Laboratory; Guo, Yijun [Ames Laboratory; Ruberu, T. Purnima A. [Ames Laboratory; Tavasoli, Elham [Ames Laboratory; Vela, Javier [Ames Laboratory

    2014-03-15

    The optoelectronic and chemical properties of semiconductor nanocrystals heavily depend on their composition, size, shape and internal structure, surface functionality, etc. Available strategies to alter these properties through traditional colloidal syntheses and ligand exchange methods place a premium on specific reaction conditions and surfactant combinations. In this invited review, we apply a molecular-level understanding of chemical precursor reactivity to reliably control the morphology, composition and intimate architecture (core/shell vs. alloyed) of semiconductor nanocrystals. We also describe our work aimed at achieving highly selective, low-temperature photochemical methods for the synthesis of semiconductor–metal and semiconductor–metal oxide photocatalytic nanocomposites. In addition, we describe our work on surface modification of semiconductor nanocrystal quantum dots using new approaches and methods that bypass ligand exchange, retaining the nanocrystal's native ligands and original optical properties, as well as on spectroscopic methods of characterization useful in determining surface ligand organization and chemistry. Using recent examples from our group and collaborators, we demonstrate how these efforts have lead to faster, wider and more systematic application of semiconductor nanocrystal-based materials to biological imaging and tracking, and to photocatalysis of unconventional substrates. We believe techniques and methods borrowed from inorganic chemistry (including coordination, organometallic and solid state chemistry) have much to offer in reaching a better understanding of the synthesis, functionalization and real-life application of such exciting materials as semiconductor nanocrystals (quantum dots, rods, tetrapods, etc.).

  19. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-05-01

    In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  20. What Density Functional Theory could do for Quantum Information

    Science.gov (United States)

    Mattsson, Ann

    2015-03-01

    The Hohenberg-Kohn theorem of Density Functional Theory (DFT), and extensions thereof, tells us that all properties of a system of electrons can be determined through their density, which uniquely determines the many-body wave-function. Given access to the appropriate, universal, functionals of the density we would, in theory, be able to determine all observables of any electronic system, without explicit reference to the wave-function. On the other hand, the wave-function is at the core of Quantum Information (QI), with the wave-function of a set of qubits being the central computational resource in a quantum computer. While there is seemingly little overlap between DFT and QI, reliance upon observables form a key connection. Though the time-evolution of the wave-function and associated phase information is fundamental to quantum computation, the initial and final states of a quantum computer are characterized by observables of the system. While observables can be extracted directly from a system's wave-function, DFT tells us that we may be able to intuit a method for extracting them from its density. In this talk, I will review the fundamentals of DFT and how these principles connect to the world of QI. This will range from DFT's utility in the engineering of physical qubits, to the possibility of using it to efficiently (but approximately) simulate Hamiltonians at the logical level. The apparent paradox of describing algorithms based on the quantum mechanical many-body wave-function with a DFT-like theory based on observables will remain a focus throughout. The ultimate goal of this talk is to initiate a dialog about what DFT could do for QI, in theory and in practice. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  1. Quantum Chemistry on Quantum Computers: A Polynomial-Time Quantum Algorithm for Constructing the Wave Functions of Open-Shell Molecules.

    Science.gov (United States)

    Sugisaki, Kenji; Yamamoto, Satoru; Nakazawa, Shigeaki; Toyota, Kazuo; Sato, Kazunobu; Shiomi, Daisuke; Takui, Takeji

    2016-08-18

    Quantum computers are capable to efficiently perform full configuration interaction (FCI) calculations of atoms and molecules by using the quantum phase estimation (QPE) algorithm. Because the success probability of the QPE depends on the overlap between approximate and exact wave functions, efficient methods to prepare accurate initial guess wave functions enough to have sufficiently large overlap with the exact ones are highly desired. Here, we propose a quantum algorithm to construct the wave function consisting of one configuration state function, which is suitable for the initial guess wave function in QPE-based FCI calculations of open-shell molecules, based on the addition theorem of angular momentum. The proposed quantum algorithm enables us to prepare the wave function consisting of an exponential number of Slater determinants only by a polynomial number of quantum operations.

  2. Generalized generating functional for mixed-representation Green's functions: A quantum-mechanical approach

    Science.gov (United States)

    Blasone, Massimo; Jizba, Petr; Smaldone, Luca

    2017-11-01

    When one tries to take into account the nontrivial vacuum structure of quantum field theory, the standard functional-integral tools, such as generating functionals or transitional amplitudes, are often quite inadequate for such purposes. Here we propose a generalized generating functional for Green's functions which allows one to easily distinguish among a continuous set of vacua that are mutually connected via unitary canonical transformations. In order to keep our discussion as simple as possible, we limit ourselves to quantum mechanics where the generating functional of Green's functions is constructed by means of phase-space path integrals. The quantum-mechanical setting allows us to accentuate the main logical steps involved without embarking on technical complications such as renormalization or inequivalent representations that should otherwise be addressed in the full-fledged quantum field theory. We illustrate the inner workings of the generating functional obtained by discussing Green's functions among vacua that are mutually connected via translations and dilatations. Salient issues, including connection with quantum field theory, vacuum-to-vacuum transition amplitudes, and perturbation expansion in the vacuum parameter, are also briefly discussed.

  3. Semiconductor Quantum Dots for Applications to Advanced Concepts for Solar Photon Conversion to Electricity and Solar Fuels

    Energy Technology Data Exchange (ETDEWEB)

    Nozik, Arthur J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Beard, Matthew C [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-11-06

    The challenge of photoconversion research is to produce photovoltaic electricity at costs much less than those based on fossil fuels. Novel photoactive semiconductors and molecules of various types and structures are discussed for this purpose.

  4. Quantum anharmonic oscillator: The airy function approach

    Energy Technology Data Exchange (ETDEWEB)

    Maiz, F., E-mail: fethimaiz@gmail.com [King Khalid University, Faculty of Science, Physics Department, PO Box 9004, Abha 61413, Asseer (Saudi Arabia); University of Cartage, Nabeul Engineering Preparatory Institute, Merazka, 8000 Nabeul (Tunisia); AlFaify, S. [King Khalid University, Faculty of Science, Physics Department, PO Box 9004, Abha 61413, Asseer (Saudi Arabia)

    2014-05-15

    New and simple numerical method is being reported to solve anharmonic oscillator problems. The method is setup to approach the real potential V(x) of the anharmonic oscillator system as a piecewise linear potential u(x) and to solve the Schrödinger equation of the system using the Airy function. Then, solutions continuity conditions lead to the energy quantification condition, and consequently, the energy eigenvalues. For testing purpose, the method was applied on the sextic and octic oscillators systems. The proposed method is found to be realistic, computationally simple, and having high degrees of accuracy. In addition, it can be applied to any form of potential. The results obtained by the proposed method were seen closely agreeing with results reached by other complicated methods.

  5. Quantum physics

    International Nuclear Information System (INIS)

    Basdevant, J.L.; Dalibart, J.

    1997-01-01

    This pedagogical book gives an initiation to the principles and practice of quantum mechanics. A large part is devoted to experimental facts and to their analysis: concrete facts, phenomena and applications related to fundamental physics, elementary particles, astrophysics, high-technology, semi-conductors, micro-electronics and lasers. The book is divided in 22 chapters dealing with: quantum phenomena, wave function and Schroedinger equation, physical units and measurements, energy quantification of some simple systems, Hilbert space, Dirac formalism and quantum mechanics postulates, two-state systems and ammonia Maser principle, bands theory and crystals conductibility, commutation of observables, Stern and Gerlach experiment, approximation methods, kinetic momentum in quantum mechanics, first description of atoms, 1/2 spin formalism and magnetic resonance, Lagrangian, Hamiltonian and Lorentz force in quantum mechanics, addition of kinetic momenta and fine and hyper-fine structure of atomic lines, identical particle systems and Pauli principle, qualitative physics and scale of size of some microscopic and macroscopic phenomena, systems evolution, collisions and cross sections, invariance and conservation laws, quantum mechanics and astrophysics, and historical aspects of quantum mechanics. (J.S.)

  6. Horizon wave-function and the quantum cosmic censorship

    Directory of Open Access Journals (Sweden)

    Roberto Casadio

    2015-07-01

    Full Text Available We investigate the Cosmic Censorship Conjecture by means of the horizon wave-function (HWF formalism. We consider a charged massive particle whose quantum mechanical state is represented by a spherically symmetric Gaussian wave-function, and restrict our attention to the superextremal case (with charge-to-mass ratio α>1, which is the prototype of a naked singularity in the classical theory. We find that one can still obtain a normalisable HWF for α22, and the uncertainty in the location of the horizon blows up at α2=2, signalling that such an object is no more well-defined. This perhaps implies that a quantum Cosmic Censorship might be conjectured by stating that no black holes with charge-to-mass ratio greater than a critical value (of the order of 2 can exist.

  7. Generalized delta functions and their use in quantum optics

    Science.gov (United States)

    Brewster, R. A.; Franson, J. D.

    2018-01-01

    The Dirac delta function δ(x) is widely used in many areas of physics and mathematics. Here we consider the generalization of a Dirac delta function to allow the use of complex arguments. We show that the properties of a generalized delta function are very different from those of a Dirac delta function and that they behave more like a pole in the complex plane. We use the generalized delta function to derive the Glauber-Sudarshan P-function, P(α), for a Schrödinger cat state in a surprisingly simple form. Aside from their potential applications in classical electromagnetism and quantum optics, these results provide insight into the ability of the diagonal P-function to describe density operators with off-diagonal elements.

  8. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  9. Quantum electrodynamics and light rays. [Two-point correlation functions

    Energy Technology Data Exchange (ETDEWEB)

    Sudarshan, E.C.G.

    1978-11-01

    Light is a quantum electrodynamic entity and hence bundles of rays must be describable in this framework. The duality in the description of elementary optical phenomena is demonstrated in terms of two-point correlation functions and in terms of collections of light rays. The generalizations necessary to deal with two-slit interference and diffraction by a rectangular slit are worked out and the usefulness of the notion of rays of darkness illustrated. 10 references.

  10. Theory of brain function, quantum mechanics and superstrings

    CERN Document Server

    Nanopoulos, Dimitri V.

    1995-01-01

    Recent developments/efforts to understand aspects of the brain function at the {\\em sub-neural} level are discussed. MicroTubules (MTs) participate in a wide variety of dynamical processes in the cell especially in bioinformation processes such as learning and memory, by possessing a well-known binary error-correcting code with 64 words. In fact, MTs and DNA/RNA are unique cell structures that possess a code system. It seems that the MTs' code system is strongly related to a kind of ``Mental Code" in the following sense. The MTs' periodic paracrystalline structure make them able to support a superposition of coherent quantum states, as it has been recently conjectured by Hameroff and Penrose, representing an external or mental order, for sufficient time needed for efficient quantum computing. Then the quantum superposition collapses spontaneously/dynamically through a new, string-derived mechanism for collapse proposed recently by Ellis, Mavromatos, and myself. At the moment of collapse, organized quantum exo...

  11. Theory of single quantum dot lasers: Pauli-blocking-enhanced anti-bunching

    International Nuclear Information System (INIS)

    Su, Yumian; Bimberg, Dieter; Carmele, Alexander; Richter, Marten; Knorr, Andreas; Lüdge, Kathy; Schöll, Eckehard

    2011-01-01

    We present a theoretical model to describe the dynamics of a single semiconductor quantum dot interacting with a microcavity system. The confined quantum dot levels are pumped electrically via a carrier reservoir. The investigated dynamics includes semiconductor-specific, reservoir-induced Pauli-blocking terms in the equations of the photon probability functions. This enables a direct study of the photon statistics of the quantum light emission in dependence on the different pumping rates

  12. Commuting quantum circuits and complexity of Ising partition functions

    International Nuclear Information System (INIS)

    Fujii, Keisuke; Morimae, Tomoyuki

    2017-01-01

    Instantaneous quantum polynomial-time (IQP) computation is a class of quantum computation consisting only of commuting two-qubit gates and is not universal. Nevertheless, it has been shown that if there is a classical algorithm that can simulate IQP efficiently, the polynomial hierarchy collapses to the third level, which is highly implausible. However, the origin of the classical intractability is still less understood. Here we establish a relationship between IQP and computational complexity of calculating the imaginary-valued partition functions of Ising models. We apply the established relationship in two opposite directions. One direction is to find subclasses of IQP that are classically efficiently simulatable by using exact solvability of certain types of Ising models. Another direction is applying quantum computational complexity of IQP to investigate (im)possibility of efficient classical approximations of Ising partition functions with imaginary coupling constants. Specifically, we show that a multiplicative approximation of Ising partition functions is #P-hard for almost all imaginary coupling constants even on planar lattices of a bounded degree. (paper)

  13. Generating functionals for quantum field theories with random potentials

    International Nuclear Information System (INIS)

    Jain, Mudit; Vanchurin, Vitaly

    2016-01-01

    We consider generating functionals for computing correlators in quantum field theories with random potentials. Examples of such theories include cosmological systems in context of the string theory landscape (e.g. cosmic inflation) or condensed matter systems with quenched disorder (e.g. spin glass). We use the so-called replica trick to define two different generating functionals for calculating correlators of the quantum fields averaged over a given distribution of random potentials. The first generating functional is appropriate for calculating averaged (in-out) amplitudes and involves a single replica of fields, but the replica limit is taken to an (unphysical) negative one number of fields outside of the path integral. When the number of replicas is doubled the generating functional can also be used for calculating averaged probabilities (squared amplitudes) using the in-in construction. The second generating functional involves an infinite number of replicas, but can be used for calculating both in-out and in-in correlators and the replica limits are taken to only a zero number of fields. We discuss the formalism in details for a single real scalar field, but the generalization to more fields or to different types of fields is straightforward. We work out three examples: one where the mass of scalar field is treated as a random variable and two where the functional form of interactions is random, one described by a Gaussian random field and the other by a Euclidean action in the field configuration space.

  14. Implementation of density functional embedding theory within the projector-augmented-wave method and applications to semiconductor defect states

    International Nuclear Information System (INIS)

    Yu, Kuang; Libisch, Florian; Carter, Emily A.

    2015-01-01

    We report a new implementation of the density functional embedding theory (DFET) in the VASP code, using the projector-augmented-wave (PAW) formalism. Newly developed algorithms allow us to efficiently perform optimized effective potential optimizations within PAW. The new algorithm generates robust and physically correct embedding potentials, as we verified using several test systems including a covalently bound molecule, a metal surface, and bulk semiconductors. We show that with the resulting embedding potential, embedded cluster models can reproduce the electronic structure of point defects in bulk semiconductors, thereby demonstrating the validity of DFET in semiconductors for the first time. Compared to our previous version, the new implementation of DFET within VASP affords use of all features of VASP (e.g., a systematic PAW library, a wide selection of functionals, a more flexible choice of U correction formalisms, and faster computational speed) with DFET. Furthermore, our results are fairly robust with respect to both plane-wave and Gaussian type orbital basis sets in the embedded cluster calculations. This suggests that the density functional embedding method is potentially an accurate and efficient way to study properties of isolated defects in semiconductors

  15. On the interpretation of wave function overlaps in quantum dots

    DEFF Research Database (Denmark)

    Stobbe, Søren; Hvam, Jørn Märcher; Lodahl, Peter

    2011-01-01

    The spontaneous emission rate of excitons strongly confined in quantum dots (QDs) is proportional to the overlap integral of electron and hole envelope wave functions. A common and intuitive interpretation of this result is that the spontaneous emission rate is proportional to the probability...... that the electron and the hole are located at the same point or region in space, i.e., they must coincide spatially to recombine. Here, we show that this interpretation is not correct even loosely speaking. By general mathematical considerations we compare the envelope wave function overlap, the exchange overlap...

  16. Modelling graphene quantum dot functionalization via ethylene-dinitrobenzoyl

    Science.gov (United States)

    Noori, Keian; Hübener, Hannes; Kymakis, Emmanuel; Giustino, Feliciano

    2016-03-01

    Ethylene-dinitrobenzoyl (EDNB) linked to graphene oxide has been shown to improve the performance of graphene/polymer organic photovoltaics. Its binding conformation on graphene, however, is not yet clear, nor have its effects on work function and optical absorption been explored more generally for graphene quantum dots. In this report, we clarify the linkage of EDNB to GQDs from first principles and show that the binding of the molecule increases the work function of graphene, while simultaneously modifying its absorption in the ultraviolet region.

  17. Modelling graphene quantum dot functionalization via ethylene-dinitrobenzoyl

    Energy Technology Data Exchange (ETDEWEB)

    Noori, Keian; Giustino, Feliciano [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Hübener, Hannes [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Nano-Bio Spectroscopy Group and European Theoretical Spectroscopy Facility (ETSF), Universidad del País Vasco CFM CSIC-UPV/EHU-MPC & DIPC, Av. Tolosa 72, 20018 San Sebastián (Spain); Kymakis, Emmanuel [Center of Materials Technology and Photonics & Electrical Engineering Department, Technological Educational Institute (TEI) of Crete, Heraklion, 71004 Crete (Greece)

    2016-03-21

    Ethylene-dinitrobenzoyl (EDNB) linked to graphene oxide has been shown to improve the performance of graphene/polymer organic photovoltaics. Its binding conformation on graphene, however, is not yet clear, nor have its effects on work function and optical absorption been explored more generally for graphene quantum dots. In this report, we clarify the linkage of EDNB to GQDs from first principles and show that the binding of the molecule increases the work function of graphene, while simultaneously modifying its absorption in the ultraviolet region.

  18. Fluctuations of quantum fields via zeta function regularization

    International Nuclear Information System (INIS)

    Cognola, Guido; Zerbini, Sergio; Elizalde, Emilio

    2002-01-01

    Explicit expressions for the expectation values and the variances of some observables, which are bilinear quantities in the quantum fields on a D-dimensional manifold, are derived making use of zeta function regularization. It is found that the variance, related to the second functional variation of the effective action, requires a further regularization and that the relative regularized variance turns out to be 2/N, where N is the number of the fields, thus being independent of the dimension D. Some illustrating examples are worked through. The issue of the stress tensor is also briefly addressed

  19. Improving the efficiency of quantum hash function by dense coding of coin operators in discrete-time quantum walk

    Science.gov (United States)

    Yang, YuGuang; Zhang, YuChen; Xu, Gang; Chen, XiuBo; Zhou, Yi-Hua; Shi, WeiMin

    2018-03-01

    Li et al. first proposed a quantum hash function (QHF) in a quantum-walk architecture. In their scheme, two two-particle interactions, i.e., I interaction and π-phase interaction are introduced and the choice of I or π-phase interactions at each iteration depends on a message bit. In this paper, we propose an efficient QHF by dense coding of coin operators in discrete-time quantum walk. Compared with existing QHFs, our protocol has the following advantages: the efficiency of the QHF can be doubled and even more; only one particle is enough and two-particle interactions are unnecessary so that quantum resources are saved. It is a clue to apply the dense coding technique to quantum cryptographic protocols, especially to the applications with restricted quantum resources.

  20. Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

    Energy Technology Data Exchange (ETDEWEB)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Kasatkin, A. P.; Antonov, I. N.; Vihrova, O. V.; Morozov, A. I. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

  1. Assembly, Structure, and Functionality of Metal-Organic Networks and Organic Semiconductor Layers at Surfaces

    Science.gov (United States)

    Tempas, Christopher D.

    Self-assembled nanostructures at surfaces show promise for the development of next generation technologies including organic electronic devices and heterogeneous catalysis. In many cases, the functionality of these nanostructures is not well understood. This thesis presents strategies for the structural design of new on-surface metal-organic networks and probes their chemical reactivity. It is shown that creating uniform metal sites greatly increases selectivity when compared to ligand-free metal islands. When O2 reacts with single-site vanadium centers, in redox-active self-assembled coordination networks on the Au(100) surface, it forms one product. When O2 reacts with vanadium metal islands on the same surface, multiple products are formed. Other metal-organic networks described in this thesis include a mixed valence network containing Pt0 and PtII and a network where two Fe centers reside in close proximity. This structure is stable to temperatures >450 °C. These new on-surface assemblies may offer the ability to perform reactions of increasing complexity as future heterogeneous catalysts. The functionalization of organic semiconductor molecules is also shown. When a few molecular layers are grown on the surface, it is seen that the addition of functional groups changes both the film's structure and charge transport properties. This is due to changes in both first layer packing structure and the pi-electron distribution in the functionalized molecules compared to the original molecule. The systems described in this thesis were studied using high-resolution scanning tunneling microscopy, non-contact atomic force microscopy, and X-ray photoelectron spectroscopy. Overall, this work provides strategies for the creation of new, well-defined on-surface nanostructures and adds additional chemical insight into their properties.

  2. Localization landscape theory of disorder in semiconductors I: Theory and modeling

    OpenAIRE

    Filoche, Marcel; Piccardo, Marco; Wu, Yuh-Renn; Li, Chi-Kang; Weisbuch, Claude; Mayboroda, Svitlana

    2017-01-01

    We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called \\emph{localization landscape}. These landscapes allow us to predict the localization regions of electron and hole quantum states, their corresponding energies, and the local densi...

  3. Integration of Multi-Functional Oxide Thin Film Heterostructures with III-V Semiconductors

    Science.gov (United States)

    Rahman, Md. Shafiqur

    Integration of multi-functional oxide thin films with semiconductors has attracted considerable attention in recent years due to their potential applications in sensing and logic functionalities that can be incorporated in future system-on-a-chip devices. III-V semiconductor, for example, GaAs, have higher saturated electron velocity and mobility allowing transistors based on GaAs to operate at a much higher frequency with less noise compared to Si. In addition, because of its direct bandgap a number of efficient optical devices are possible and by oxide integrating with other III-V semiconductors the wavelengths can be made tunable through hetero-engineering of the bandgap. This study, based on the use of SrTiO3 (STO) films grown on GaAs (001) substrates by molecular beam epitaxy (MBE) as an intermediate buffer layer for the hetero-epitaxial growth of ferromagnetic La0.7Sr 0.3MnO3 (LSMO) and room temperature multiferroic BiFeO 3 (BFO) thin films and superlattice structures using pulsed laser deposition (PLD). The properties of the multilayer thin films in terms of growth modes, lattice spacing/strain, interface structures and texture were characterized by the in-situ reflection high energy electron diffraction (RHEED). The crystalline quality and chemical composition of the complex oxide heterostructures were investigated by a combination of X-ray diffraction (XRD) and X-ray photoelectron absorption spectroscopy (XPS). Surface morphology, piezo-response with domain structure, and ferroelectric switching observations were carried out on the thin film samples using a scanning probe microscope operated as a piezoresponse force microscopy (PFM) in the contact mode. The magnetization measurements with field cooling exhibit a surprising increment in magnetic moment with enhanced magnetic hysteresis squareness. This is the effect of exchange interaction between the antiferromagnetic BFO and the ferromagnetic LSMO at the interface. The integration of BFO materials with

  4. Functionalization of group IV semiconductors; Funktionalisierung von Gruppe IV-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Hoeb, Marco Andreas

    2011-01-15

    The present work is focused on the structural and electronic properties of thermally and photochemically grafted alkene molecules. The semiconductor substrates used in this work are the group IV-semiconductors silicon, diamond, and silicon carbide. On silicon, functionalization via the commonly known hydrosilylation reaction was performed. During thermal treatment in vacuum-distilled 1-octadecene, the alkene molecules covalently added to the substrate via Si-C bond formation, resulting in self-assembled organic monolayers. The reaction resulted in smooth and homogeneous alkyl-terminated surfaces. Static water contact angles were determined to be 113 . Photoelectron spectroscopy was performed and showed no evidence of surface oxidation. The high packing of the organic layers is indicated by the asymmetric methylene vibrational mode, which has been redshifted by -4 cm{sup -1} with respect to the liquid alkene mode position. The average molecular tilt-angle of the alkyl-molecules, relative to the surface normal, has been identified to be 34 . The transport properties have been determined to be dominated by tunneling processes. On diamond, first results on the thermal functionalization of hydrogen- and oxygen-terminated surfaces are demonstrated. Thermal functionalization with octadecene showed high selectivity, while hydrogenated diamond surfaces were found to be inert to the thermally induced reaction with alkenes. In contrast, alkene molecules were successfully grafted to oxygen-terminated sites via covalent C-O-C bonds. Reaction temperatures as high as 160 C were necessary to initiate the functionalization process.Wetting experiments on the alkyl-modified surfaces revealed contact angle values of 103 . The high quality of the monolayers on oxygenated surfaces was confirmed by IR-spectroscopy. In addition, polarized IR-measurements indicated a tilt angle of 23 . On silicon carbide, thermal and UV-induced alkoxylation were studied. Hydrofluoric acid treatment

  5. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  6. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  7. A quantum speedup in machine learning: finding an N-bit Boolean function for a classification

    International Nuclear Information System (INIS)

    Yoo, Seokwon; Lee, Jinhyoung; Bang, Jeongho; Lee, Changhyoup

    2014-01-01

    We compare quantum and classical machines designed for learning an N-bit Boolean function in order to address how a quantum system improves the machine learning behavior. The machines of the two types consist of the same number of operations and control parameters, but only the quantum machines utilize the quantum coherence naturally induced by unitary operators. We show that quantum superposition enables quantum learning that is faster than classical learning by expanding the approximate solution regions, i.e., the acceptable regions. This is also demonstrated by means of numerical simulations with a standard feedback model, namely random search, and a practical model, namely differential evolution. (paper)

  8. Quantum gravitational corrections to the functional Schroedinger equation

    International Nuclear Information System (INIS)

    Kiefer, C.; Singh, T.P.

    1990-10-01

    We derive corrections to the Schroedinger equation which arise from the quantization of the gravitational field. This is achieved through an expansion of the full functional Wheeler-DeWitt equation with respect to powers of the Planck mass. We demonstrate that the corrections terms are independent of the factor ordering which is chosen for the gravitational kinetic term. Although the corrections are numerically extremely tiny, we show how they lead, at least in principle, to shift in the spectral lines of hydrogen type atoms. We discuss the significance of these corrections for quantum field theory near the Planck scale. (author). 35 refs

  9. Electron g-factor in diluted magnetic semiconductor quantum well with parabolic potential in the presence of Rashba effect and magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Babanli, Arif M. [Azerbaijan National Academy of Sciences, Baku (Azerbaijan). Inst. of Physics; Sueleyman Demirel Univ., Isparta (Turkey). Dept. of Physics; Artunc, Ekrem [Sueleyman Demirel Univ., Isparta (Turkey). Dept. of Physics; Kasalak, Turgut F. [Akdeniz Univ., Antalya (Turkey). Dept. of Informatics

    2015-07-01

    We have studied the Rashba spin-orbital effect on a diluted magnetic semiconductor (DMS) quantum well with parabolic potential in the presence of a magnetic field parallel to the z axis, taking into account the Zeeman coupling and the s-d exchange interaction between the carriers and the magnetic ions. We have obtained an analytical expression for the electron energy spectrum, which depends on the magnetic ion concentration, temperature, and strength of magnetic field. By using the obtained energy spectrum, we calculated the electron effective g{sup *}-factor. We have found that effective g{sup *}-factor increases when the magnetic field increases; by increasing the strength of spin-orbit interaction, the electron g{sup *}-factor decreases and by increasing the temperature, the electron g{sup *}-factor increases.

  10. The use of bulk states to accelerate the band edge state calculation of a semiconductor quantum dot

    International Nuclear Information System (INIS)

    Voemel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques, Osni A.; Dongarra, Jack J.

    2007-01-01

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations

  11. Green function treatment of electronic transport in narrow rough semiconductor conduction channels

    International Nuclear Information System (INIS)

    Martin, Pierre N; Ravaioli, Umberto

    2009-01-01

    We explore the effect of geometrical fluctuations on the electronic transport in rough Si nanowire (NW) thermoelectric devices of diameter D < 10 nm. At this scale, the quantum nature of transport is accounted in the computation of energy dependent transmission coefficients through a recursive green function algorithm. The rough 3D NW geometry is used as a direct input to simulations through the roughness height Δ and autocovariance length L. Using a non parabolic band structure, the channel conductance above 0.1 eV is drastically reduced in such NW with high D/Δ ratio. In addition, the roughness induced resistivity is only increased by 6% on the first energy level of 10 nm Si channels with Δ = 7.7 A, showing possible application for high thermoelectric figures of merit ZT.

  12. Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations

    Energy Technology Data Exchange (ETDEWEB)

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori [Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507 (Japan); Freeman, Arthur J. [Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-03-31

    The electronic band structures and excited states of III-V semiconductors such as GaP, AlP, AlAs, and AlSb for various polytypes are determined employing the screened-exchange density functional calculations implemented in the full-potential linearized augmented plane-wave methods. We demonstrate that GaP and AlSb in the wurtzite (WZ) structure have direct gap while III-V semiconductors in the zinc blende, 4H, and 6H structures considered in this study exhibit an indirect gap. Furthermore, we find that inclusion of Al atoms less than 17% and 83% in the hexagonal Al{sub x}Ga{sub 1−x}P and Al{sub x}Ga{sub 1−x}As alloys, respectively, leads to a direct transition with a gap energy of ∼2.3 eV. The feasibility of III-V semiconductors with a direct gap in WZ structure offers a possible crystal structure engineering to tune the optical properties of semiconductor materials.

  13. Quantum fluid dynamics within a relativistic density-functional framework

    International Nuclear Information System (INIS)

    Ghosh, S.K.; Deb, B.M.; Indian Inst. of Tech., Bombay. Group of Theoretical Studies)

    1984-01-01

    The authors explore certain interconnections between density-functional theory and quantum fluid dynamics of many-electron systems, in the relativistic domain, following the hydrodynamical approach for the one-particle Dirac equation. The spinor formulation is transformed into a tensor formulation, by defining a number of density functions. These lead to six 'classical' fluid dynamical equations, for a complete specification of the system. The various density functions and the hydrodynamical equations are physically interpreted. The relativistic hydrodynamics discussed, correspond to a 'spinning' fluid. The net many-electron fluid consists of components each of which is characterised by fluid dynamical quantities corresponding to each spinor. The net hydrodynamical quantities are obtained by summing over the occupied spinors. Thus, the earlier non-relativistic 'classical' picture of the many-electron fluid as a collection of individual fluid components is also valid in the relativistic domain. (author)

  14. A Comment on Quantum Distribution Functions and the OSV Conjecture

    CERN Document Server

    Gómez, C; Gomez, Cesar; Montanez, Sergio

    2006-01-01

    Using the attractor mechanism and the relation between the quantization of $H^{3}(M)$ and topological strings on a Calabi Yau threefold $M$ we define a map from BPS black holes into coherent states. This map allows us to represent the Bekenstein-Hawking-Wald entropy as a quantum distribution function on the phase space $H^{3}(M)$. This distribution function is a mixed Husimi/anti-Husimi distribution corresponding to the different normal ordering prescriptions for the string coupling and deviations of the complex structure moduli. From the integral representation of this distribution function in terms of the Wigner distribution we recover the Ooguri-Strominger-Vafa (OSV) conjecture in the region "at infinity" of the complex structure moduli space. The physical meaning of the OSV corrections are briefly discussed in this limit.

  15. High performance polarization-independent Quantum Dot Semiconductor Optical Amplifier with 22 dB fiber to fiber gain using Mode Propagation Tuning without additional polarization controller

    Science.gov (United States)

    Farmani, Ali; Farhang, Mahmoud; Sheikhi, Mohammad H.

    2017-08-01

    A detailed numerical investigation of polarization-independent quantum dot InAs/GaAs semiconductor optical amplifier (PIQS) based on a technique called mode propagation tuning (MPT) without the need for the polarization controller (PC) is reported, which can solve the limitation caused by polarization sensitivity in a semiconductor optical amplifier (SOA). Our calculations show that by a suitable tuning of the thickness of the active layer, only the TE0 and TM0 modes can propagate. Moreover, the gain saturation behavior of this SOA was measured at 1.55 μ m and found to be polarization-independent (PI). At active layer thickness of 1.7 μ m, the confinement factor was 0.75 and 0.7 for TE0 and TM0 modes, respectively, which leads to a gain difference up to 0.1 dB. The rate equations of the QD-SOA were also solved and a fiber to fiber gain of 22 dB was obtained. Additionally, a numerical simulation is presented which shows that the residual gain ripple and polarization sensitivity are sufficiently reduced when residual facet reflectivities of the SOA are in the range below 10-4 . In addition, the full-width at half-maximum of the horizontal and vertical far-field patterns (FFPs) are measured as 30° × 30°. The proposed structure can be used for logical applications.

  16. Quantum discord of X-states as optimization of a one variable function

    International Nuclear Information System (INIS)

    Jing, Naihuan; Yu, Bing

    2016-01-01

    We solve the quantum discord completely as an optimization of a certain one variable function for an arbitrary two qubit X state. Exact solutions of the quantum discord are obtained for several nontrivial regions of the five parametric space for the quantum state. Exceptional solutions are determined via an iterative algorithm. (paper)

  17. New real space correlated-basis-functions approach for the electron correlations of the semiconductor inversion layer

    International Nuclear Information System (INIS)

    Feng Weiguo; Wang Hongwei; Wu Xiang

    1989-12-01

    Based on the real space Correlated-Basis-Functions theory and the collective oscillation behaviour of the electron gas with effective Coulomb interaction, the many body wave function is obtained for the quasi-two-dimensional electron system in the semiconductor inversion layer. The pair-correlation function and the correlation energy of the system have been calculated by the integro-differential method in this paper. The comparison with the other previous theoretical results is also made. The new theoretical approach and its numerical results show that the pair-correlation functions are definitely positive and satisfy the normalization condition. (author). 10 refs, 2 figs

  18. Fully Parameter-Free Calculation of Optical Spectra for Insulators, Semiconductors, and Metals from a Simple Polarization Functional.

    Science.gov (United States)

    Berger, J A

    2015-09-25

    We present a fully parameter-free density-functional approach for the accurate description of optical absorption spectra of insulators, semiconductors, and metals. We show that this can be achieved within time-dependent current-density-functional theory using a simple dynamical polarization functional. We derive this functional from physical principles that govern optical spectra. Our method is truly predictive because not a single parameter is used. In particular, we do not use an ad hoc material-dependent broadening parameter to compare theory to experiment as is usually done. Our approach is numerically efficient; the cost equals that of a calculation within the random-phase approximation.

  19. Hybrid system of semiconductor and photosynthetic protein

    Science.gov (United States)

    Kim, Younghye; Shin, Seon Ae; Lee, Jaehun; Yang, Ki Dong; Nam, Ki Tae

    2014-08-01

    Photosynthetic protein has the potential to be a new attractive material for solar energy absorption and conversion. The development of semiconductor/photosynthetic protein hybrids is an example of recent progress toward efficient, clean and nanostructured photoelectric systems. In the review, two biohybrid systems interacting through different communicating methods are addressed: (1) a photosynthetic protein immobilized semiconductor electrode operating via electron transfer and (2) a hybrid of semiconductor quantum dots and photosynthetic protein operating via energy transfer. The proper selection of materials and functional and structural modification of the components and optimal conjugation between them are the main issues discussed in the review. In conclusion, we propose the direction of future biohybrid systems for solar energy conversion systems, optical biosensors and photoelectric devices.

  20. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  1. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  2. Quantum spin correction scheme based on spin-correlation functional for Kohn-Sham spin density functional theory

    International Nuclear Information System (INIS)

    Yamanaka, Shusuke; Takeda, Ryo; Nakata, Kazuto; Takada, Toshikazu; Shoji, Mitsuo; Kitagawa, Yasutaka; Yamaguchi, Kizashi

    2007-01-01

    We present a simple quantum correction scheme for ab initio Kohn-Sham spin density functional theory (KS-SDFT). This scheme is based on a mapping from ab initio results to a Heisenberg model Hamiltonian. The effective exchange integral is estimated by using energies and spin correlation functionals calculated by ab initio KS-SDFT. The quantum-corrected spin-correlation functional is open to be designed to cover specific quantum spin fluctuations. In this article, we present a simple correction for dinuclear compounds having multiple bonds. The computational results are discussed in relation to multireference (MR) DFT, by which we treat the quantum many-body effects explicitly

  3. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    International Nuclear Information System (INIS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-01-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO 2 and ZrO 2 , which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10 11 cm −2 , respectively. The device with a structure Metal/ZrO 2 /InAs QDs/HfO 2 /GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10 −6 A/cm 2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO 2 deposition

  4. Hybrid plasmonic/semiconductor nanoparticle monolayer assemblies as hyperbolic metamaterials

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Ozel, Tuncay; Mutlugun, Evren

    2014-01-01

    We show that hybrid nanostructures made of alternating colloidal semiconductor quantum dot and metal nanoparticle monolayers can function as multilayer hyperbolic meta-materials. By choosing the thickness of the spacer between the quantum dot and nanoparticle layers, one can achieve the indefinite...... effective permittivity tensor of the structure. This results in increased photonic density of states and strong enhancement of quantum dot luminescence, in line with recent experimental results. Our findings demonstrate that hyperbolic metamaterials can increase the radiative decay rate of emission centers...

  5. Far-field nanoscopy on a semiconductor quantum dot via a rapid-adiabatic-passage-based switch

    Science.gov (United States)

    Kaldewey, Timo; Kuhlmann, Andreas V.; Valentin, Sascha R.; Ludwig, Arne; Wieck, Andreas D.; Warburton, Richard J.

    2018-02-01

    The diffraction limit prevents a conventional optical microscope from imaging at the nanoscale. However, nanoscale imaging of molecules is possible by exploiting an intensity-dependent molecular switch1-3. This switch is translated into a microscopy scheme, stimulated emission depletion microscopy4-7. Variants on this scheme exist3,8-13, yet all exploit an incoherent response to the lasers. We present a scheme that relies on a coherent response to a laser. Quantum control of a two-level system proceeds via rapid adiabatic passage, an ideal molecular switch. We implement this scheme on an ensemble of quantum dots. Each quantum dot results in a bright spot in the image with extent down to 30 nm (λ/31). There is no significant loss of intensity with respect to confocal microscopy, resulting in a factor of 10 improvement in emitter position determination. The experiments establish rapid adiabatic passage as a versatile tool in the super-resolution toolbox.

  6. Temperature-dependent properties of semiconductor quantum dots in coherent regime; Temperaturabhaengige Eigenschaften einzelner Halbleiter-Quantenpunkte im Kohaerenten Regime

    Energy Technology Data Exchange (ETDEWEB)

    Huebner, Marc C.

    2009-10-15

    Recently, the public has become aware of keywords like ''Quantum computer'' or ''Quantum cryptography''. Regarding their potential application in solid state based quantum information processing and their overall benefit in fundamental research quantum dots have gained more and more public interest. In this context, quantum dots are often referred to as ''artificial atoms'', a term subsuming their physical properties quite nicely and emphasizing the huge potential for further investigations. The basic mechanism to be considered is the theoretical model of a two-level system. A quantum dot itself represents this kind of system quite nicely, provided that only the presence or absence of a single exciton in the ground state of that structure is regarded. This concept can also be expanded to the presence of two excitons (bi-exciton). Transitions between the relevant levels can be induced by optical stimulation. When integrating quantum dots in diode like structures measurements of this phenomena can be accomplished regarding photo currents. This means of detection is highly sensitive and allows for tuning of the energy levels with respect to the energy of an exciting laser utilizing the Stark effect (via an external electric field). The photo current then shows narrow resonances representing those transitions. By this, the system can be used as a highly sensitive nano-spectrometer. The examination of coherent interactions between quantum dots and an electromagnetic field uses laser pulses that are much shorter than the dephasing time of the system (2 ps). The basic study to be done on two level systems is the measurement of Rabi oscillations allowing for the selection of an arbitrary superposition of states. In this work, the existing setup was improved regarding the possibility to control the temperature of the sample. Up to now, only investigations at 4,2 K have been possible. Even at 70 K Rabi oscillations

  7. Enhancing charge mobilities in organic semiconductors by selective fluorination: a design approach based on a quantum mechanical perspective.

    Science.gov (United States)

    Maiti, Buddhadev; Schubert, Alexander; Sarkar, Sunandan; Bhandari, Srijana; Wang, Kunlun; Li, Zhe; Geva, Eitan; Twieg, Robert J; Dunietz, Barry D

    2017-10-01

    Selective fluorination of organic semiconducting molecules is proposed as a means to achieving enhanced hole mobility. Naphthalene is examined here as a root molecular system with fluorination performed at various sites. Our quantum chemical calculations show that selective fluorination can enhance attractive intermolecular interactions while reducing charge trapping. Those observations suggest a design principle whereby fluorination is utilized for achieving high charge mobilities in the crystalline form. The utility of this design principle is demonstrated through an application to perylene, which is an important building block of organic semiconducting materials. We also show that a quantum mechanical perspective of nuclear degrees of freedom is crucial for a reliable description of charge transport.

  8. Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

    Science.gov (United States)

    Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

    2006-01-01

    Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

  9. Study of dislocations in nanoscale semiconductors by ab initio molecular dynamics and lattice Green's function methods

    Energy Technology Data Exchange (ETDEWEB)

    Masuda-Jindo, K. [Department of Materials Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hung, Vu Van [Hanoi National Pedagogic University, km8 Hanoi-Sontay Highway, Hanoi (Viet Nam); Menon, M. [Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2005-04-01

    The electronic and mechanical properties of the nanoscale materials are studied by using an ab initio molecular dynamics (TBMD) method and temperature dependent lattice Green's function method. The core structures of dislocations in semiconductor crystallites composed of {proportional_to}1000 atoms are calculated using the ab initio TB molecular dynamics method and compared with those in the corresponding bulk semiconductors. The core structures of both 30 and 90 partial dislocations in Si crystallites are found to be similar to those of the bulk Si crystals, but excess energies of the dislocations are of considerably smaller in the small semiconductor crystallites. We also investigate the mechanical (dislocation) properties of carbon related nanoscale materials, graphen in comparison with CNT, by using the temperature dependent Lattice Green's function method and we will show that the thermodynamic and mechanical properties of the nanoscale materials are quite different from those of the corresponding bulk materials. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Coherent effects in semiconductor light emission

    Science.gov (United States)

    Kira, M.; Jahnke, Frank; Hoyer, W.; Koch, Stephan W.

    2000-03-01

    Coherent signatures in the semiconductor light emission are studied using a fully quantum mechanical theory for the system of photons and Coulomb interacting electron-hole pairs. The dominant light-matter correlations couple the semiconductor Bloch and luminescence equations yielding significant quantum corrections. A coherent excitation leads to squeezing of the emitted light as well as to entanglement between light and matter.

  11. Biexcitons in semiconductor microcavities

    DEFF Research Database (Denmark)

    Borri, P.; Langbein, W.; Woggon, U.

    2003-01-01

    In this paper, the present status of the experimental study of the optical properties of biexcitons in semiconductor microcavities is reviewed. In particular, a detailed investigation of a polariton-biexciton transition in a high-quality single quantum well GaAs/AlGaAs microcavity is reported...

  12. Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

    DEFF Research Database (Denmark)

    Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.

    2010-01-01

    We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

  13. Auger Processes Mediating the Nonresonant Optical Emission from a Semiconductor Quantum Dot Embedded Inside an Optical Cavity

    DEFF Research Database (Denmark)

    Settnes, Mikkel; Nielsen, Per Kær; Lund, Anders Mølbjerg

    2013-01-01

    perform microscopic calculations of the effect treating the wetting layer as a non-Markovian reservoir interacting with the coupled quantum dot-cavity system through Coulomb interactions. Experimentally, cavity feeding has been observed in the asymmetric detuning range of -10 to +45 meV. We show...

  14. Comparison of electromagnetically induced transparency schemes in semiconductor quantum dot structures: Impact of many-body interactions

    DEFF Research Database (Denmark)

    Houmark-Nielsen, Jakob; Nielsen, Torben Roland; Mørk, Jesper

    2009-01-01

    We investigate the impact of many-body interactions on group-velocity slowdown achieved via electromagnetically induced transparency in quantum dots using three different coupling-probe schemes (ladder, V, and Lambda, respectively). We find that for all schemes many-body interactions have...

  15. Functional Carbon Quantum Dots: A Versatile Platform for Chemosensing and Biosensing.

    Science.gov (United States)

    Feng, Hui; Qian, Zhaosheng

    2017-11-24

    Carbon quantum dot has emerged as a new promising fluorescent nanomaterial due to its excellent optical properties, outstanding biocompatibility and accessible fabrication methods, and has shown huge application perspective in a variety of areas, especially in chemosensing and biosensing applications. In this personal account, we give a brief overview of carbon quantum dots from its origin and preparation methods, present some advance on fluorescence origin of carbon quantum dots, and focus on development of chemosensors and biosensors based on functional carbon quantum dots. Comprehensive advances on functional carbon quantum dots as a versatile platform for sensing from our group are included and summarized as well as some typical examples from the other groups. The biosensing applications of functional carbon quantum dots are highlighted from selective assays of enzyme activity to fluorescent identification of cancer cells and bacteria. © 2017 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Wigner functions and statistical moments of quantum states with definite parity

    International Nuclear Information System (INIS)

    Dodonov, V.V.

    2007-01-01

    It is shown that all statistical moments of a quantum state with definite parity are given by derivatives of the Wigner function at the origin of the phase plane. New inequalities connecting statistical moments of arbitrary (pure and mixed) quantum states with derivatives of the Wigner function are also derived. Applications to the problem of decoherence are considered

  17. The Riesz-Clifford Functional Calculus for Non-Commuting Operators and Quantum Field Theory

    OpenAIRE

    Kisil, Vladimir V.; de Arellano, Enrique Ramírez

    1995-01-01

    We present a Riesz-like hyperholomorphic functional calculus for a set of non-commuting operators based on the Clifford analysis. Applications to the quantum field theory are described. Keywords: Functional calculus, Weyl calculus, Riesz calculus, Clifford analysis, quantization, quantum field theory. AMSMSC Primary:47A60, Secondary: 81T10

  18. Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Carpintero, G.; Thompson, M. G.; Yvind, Kresten

    2011-01-01

    Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...

  19. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    International Nuclear Information System (INIS)

    Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

    2015-01-01

    Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

  20. Electric Field Modulation of Semiconductor Quantum Dot Photoluminescence: Insights Into the Design of Robust Voltage-Sensitive Cellular Imaging Probes.

    Science.gov (United States)

    Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B

    2015-10-14

    The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect.

  1. Non-Abelian quantum order in spin-orbit-coupled semiconductors: Search for topological Majorana particles in solid-state systems

    Science.gov (United States)

    Sau, Jay D.; Tewari, Sumanta; Lutchyn, Roman M.; Stanescu, Tudor D.; Das Sarma, S.

    2010-12-01

    We show that an ordinary semiconducting thin film with spin-orbit coupling can, under appropriate circumstances, be in a quantum topologically ordered state supporting exotic Majorana excitations which follow non-Abelian statistics. The key to the quantum topological order is the coexistence of spin-orbit coupling with proximity-induced s -wave superconductivity and an externally induced Zeeman coupling of the spins. For the Zeeman coupling below a critical value, the system is a nontopological (proximity-induced) s -wave superconductor. However, for a range of Zeeman coupling above the critical value, the lowest energy excited state inside a vortex is a zero-energy Majorana fermion state. The system, thus, has entered into a non-Abelian s -wave superconducting state via a topological quantum phase transition (TQPT) tuned by the Zeeman coupling. In the topological phase, since the time-reversal symmetry is explicitly broken by the Zeeman term in the Hamiltonian, the edge of the film constitutes a chiral Majorana wire. Just like the s -wave superconductivity, the Zeeman coupling can also be proximity induced in the film by an adjacent magnetic insulator. We show this by an explicit model tight-binding calculation for both types of proximity effects in the heterostructure geometry. Here we show that the same TQPT can be accessed by varying the interface transparency between the film and the superconductor. For the transparency below (above) a critical value, the system is a topological (regular) s -wave superconductor. In the one-dimensional version of the same structure and for the Zeeman coupling above the critical value, there are localized Majorana zero-energy modes at the two ends of a semiconducting quantum nanowire. In this case, the Zeeman coupling can be induced more easily by an external magnetic field parallel to the wire, obviating the need for a magnetic insulator. We show that, despite the fact that the superconducting pair potential in the nanowire is

  2. Characterizing and engineering tunable spin functionality inside indium arsenide/gallium arsenide quantum dot molecules

    Science.gov (United States)

    Liu, Weiwen

    The continual downsizing of the basic functional units used in the electronics industry has motivated the study of the quantum computation and related topics. To overcome the limitations of classical physics and engineering, some unique quantum mechanical features, especially entanglement and superpositions have begun to be considered as important properties for future bits. Including these quantum mechanical features is attractive because the ability to utilize quantum mechanics can dramatically enhance computational power. Among the various ways of constructing the basic building blocks for quantum computation, we are particularly interested in using spins inside epitaxially grown InAs/GaAs quantum dot molecules as quantum bits (qubits). The ability to design and engineer nanostructures with tailored quantum properties is critical to engineering quantum computers and other novel electro-optical devices and is one of the key challenges for scaling up new ideas for device application. In this thesis, we will focus on how the structure and composition of quantum dot molecules can be used to control spin properties and charge interactions. Tunable spin and charge properties can enable new, more scalable, methods of initializing and manipulating quantum information. In this thesis, we demonstrate one method to enable electric-field tunability of Zeeman splitting for a single electron spin inside a quantum dot molecules by using heterostructure engineering techniques to modify the barrier that separates quantum dots. We describe how these structural changes to the quantum dot molecules also change charge interactions and propose ways to use this effect to enable accurate measurement of coulomb interactions and possibly charge occupancy inside these complicated quantum dot molecules.

  3. Path integrals for electronic densities, reactivity indices, and localization functions in quantum systems.

    Science.gov (United States)

    Putz, Mihai V

    2009-11-10

    The density matrix theory, the ancestor of density functional theory, provides the immediate framework for Path Integral (PI) development, allowing the canonical density be extended for the many-electronic systems through the density functional closure relationship. Yet, the use of path integral formalism for electronic density prescription presents several advantages: assures the inner quantum mechanical description of the system by parameterized paths; averages the quantum fluctuations; behaves as the propagator for time-space evolution of quantum information; resembles Schrödinger equation; allows quantum statistical description of the system through partition function computing. In this framework, four levels of path integral formalism were presented: the Feynman quantum mechanical, the semiclassical, the Feynman-Kleinert effective classical, and the Fokker-Planck non-equilibrium ones. In each case the density matrix or/and the canonical density were rigorously defined and presented. The practical specializations for quantum free and harmonic motions, for statistical high and low temperature limits, the smearing justification for the Bohr's quantum stability postulate with the paradigmatic Hydrogen atomic excursion, along the quantum chemical calculation of semiclassical electronegativity and hardness, of chemical action and Mulliken electronegativity, as well as by the Markovian generalizations of Becke-Edgecombe electronic focalization functions - all advocate for the reliability of assuming PI formalism of quantum mechanics as a versatile one, suited for analytically and/or computationally modeling of a variety of fundamental physical and chemical reactivity concepts characterizing the (density driving) many-electronic systems.

  4. Path Integrals for Electronic Densities, Reactivity Indices, and Localization Functions in Quantum Systems

    Directory of Open Access Journals (Sweden)

    Mihai V. Putz

    2009-11-01

    Full Text Available The density matrix theory, the ancestor of density functional theory, provides the immediate framework for Path Integral (PI development, allowing the canonical density be extended for the many-electronic systems through the density functional closure relationship. Yet, the use of path integral formalism for electronic density prescription presents several advantages: assures the inner quantum mechanical description of the system by parameterized paths; averages the quantum fluctuations; behaves as the propagator for time-space evolution of quantum information; resembles Schrödinger equation; allows quantum statistical description of the system through partition function computing. In this framework, four levels of path integral formalism were presented: the Feynman quantum mechanical, the semiclassical, the Feynman-Kleinert effective classical, and the Fokker-Planck non-equilibrium ones. In each case the density matrix or/and the canonical density were rigorously defined and presented. The practical specializations for quantum free and harmonic motions, for statistical high and low temperature limits, the smearing justification for the Bohr’s quantum stability postulate with the paradigmatic Hydrogen atomic excursion, along the quantum chemical calculation of semiclassical electronegativity and hardness, of chemical action and Mulliken electronegativity, as well as by the Markovian generalizations of Becke-Edgecombe electronic focalization functions – all advocate for the reliability of assuming PI formalism of quantum mechanics as a versatile one, suited for analytically and/or computationally modeling of a variety of fundamental physical and chemical reactivity concepts characterizing the (density driving many-electronic systems.

  5. Rotator side chains trigger cooperative transition for shape and function memory effect in organic semiconductors

    OpenAIRE

    Chung, Hyunjoong; Dudenko, Dmytro; Zhang, Fengjiao; D’Avino, Gabriele; Ruzié, Christian; Richard, Audrey; Schweicher, Guillaume; Cornil, Jérôme; Beljonne, David; Geerts, Yves; Diao, Ying

    2018-01-01

    Martensitic transition is a solid-state phase transition involving cooperative movement of atoms, mostly studied in metallurgy. The main characteristics are low transition barrier, ultrafast kinetics, and structural reversibility. They are rarely observed in molecular crystals, and hence the origin and mechanism are largely unexplored. Here we report the discovery of martensitic transition in single crystals of two different organic semiconductors. In situ microscopy, single-crystal X-ray dif...

  6. Some exact results for the two-point function of an integrable quantum field theory

    International Nuclear Information System (INIS)

    Creamer, D.B.; Thacker, H.B.; Wilkinson, D.

    1981-02-01

    The two point correlation function for the quantum nonlinear Schroedinger (delta-function gas) model is studied. An infinite series representation for this function is derived using the quantum inverse scattering formalism. For the case of zero temperature, the infinite coupling (c → infinity) result of Jimbo, Miwa, Mori and Sato is extended to give an exact expression for the order 1/c correction to the two point function in terms of a Painleve transcendent of the fifth kind

  7. Design of Biotin-Functionalized Luminescent Quantum Dots

    Directory of Open Access Journals (Sweden)

    Kimihiro Susumu

    2007-01-01

    Full Text Available We report the design and synthesis of a tetraethylene glycol- (TEG- based bidentate ligand functionalized with dihydrolipoic acid (DHLA and biotin (DHLA—TEG—biotin to promote biocompatibility of luminescent quantum dots (QD's. This new ligand readily binds to CdSe—ZnS core-shell QDs via surface ligand exchange. QDs capped with a mixture of DHLA and DHLA—TEG—biotin or polyethylene glycol- (PEG- (molecular weight average ∼600 modified DHLA (DHLA—PEG600 and DHLA—TEG—biotin are easily dispersed in aqueous buffer solutions. In particular, homogeneous buffer solutions of QDs capped with a mixture of DHLA—PEG600 and DHLA—TEG—biotin that are stable over broad pH range have been prepared. QDs coated with mixtures of DHLA/DHLA—TEG—biotin and with DHLA—PEG600/DHLA—TEG—biotin were tested in surface binding assays and the results indicate that biotin groups on the QD surface interact specifically with NeutrAvidin-functionalized microtiter well plates.

  8. The meaning of the wave function in search of the ontology of quantum mechanics

    CERN Document Server

    Gao, Shan

    2017-01-01

    At the heart of quantum mechanics lies the wave function, a powerful but mysterious mathematical object which has been a hot topic of debate from its earliest stages. Covering much of the recent debate and providing a comprehensive and critical review of competing approaches, this ambitious text provides new, decisive proof of the reality of the wave function. Aiming to make sense of the wave function in quantum mechanics and to find the ontological content of the theory, this book explores new ontological interpretations of the wave function in terms of random discontinuous motion of particles. Finally, the book investigates whether the suggested quantum ontology is complete in solving the measurement problem and if it should be revised in the relativistic domain. A timely addition to the literature on the foundations of quantum mechanics, this book is of value to students and researchers with an interest in the philosophy of physics. Presents a concise introduction to quantum mechanics, including the c...

  9. Simulation of charge transport in organic semiconductors: A time-dependent multiscale method based on nonequilibrium Green's functions

    Science.gov (United States)

    Leitherer, S.; Jäger, C. M.; Krause, A.; Halik, M.; Clark, T.; Thoss, M.

    2017-11-01

    In weakly interacting organic semiconductors, static disorder and dynamic disorder often have an important impact on transport properties. Describing charge transport in these systems requires an approach that correctly takes structural and electronic fluctuations into account. Here, we present a multiscale method based on a combination of molecular-dynamics simulations, electronic-structure calculations, and a transport theory that uses time-dependent nonequilibrium Green's functions. We apply the methodology to investigate charge transport in C60-containing self-assembled monolayers, which are used in organic field-effect transistors.

  10. Simulation of charge transport in organic semiconductors: A time-dependent multiscale method based on nonequilibrium Green's functions

    DEFF Research Database (Denmark)

    Leitherer, Susanne; Jager, C. M.; Krause, A.

    2017-01-01

    In weakly interacting organic semiconductors, static disorder and dynamic disorder often have an important impact on transport properties. Describing charge transport in these systems requires an approach that correctly takes structural and electronic fluctuations into account. Here, we present...... a multiscale method based on a combination of molecular-dynamics simulations, electronic-structure calculations, and a transport theory that uses time-dependent nonequilibrium Green's functions. We apply the methodology to investigate charge transport in C-60-containing self-assembled monolayers, which...

  11. Nonlinear optical spectra having characteristics of Fano interferences in coherently coupled lowest exciton biexciton states in semiconductor quantum dots

    Directory of Open Access Journals (Sweden)

    Hideki Gotoh

    2014-10-01

    Full Text Available Optical nonlinear effects are examined using a two-color micro-photoluminescence (micro-PL method in a coherently coupled exciton-biexciton system in a single quantum dot (QD. PL and photoluminescence excitation spectroscopy (PLE are employed to measure the absorption spectra of the exciton and biexciton states. PLE for Stokes and anti-Stokes PL enables us to clarify the nonlinear optical absorption properties in the lowest exciton and biexciton states. The nonlinear absorption spectra for excitons exhibit asymmetric shapes with peak and dip structures, and provide a distinct contrast to the symmetric dip structures of conventional nonlinear spectra. Theoretical analyses with a density matrix method indicate that the nonlinear spectra are caused not by a simple coherent interaction between the exciton and biexciton states but by coupling effects among exciton, biexciton and continuum states. These results indicate that Fano quantum interference effects appear in exciton-biexciton systems at QDs and offer important insights into their physics.

  12. MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures

    Science.gov (United States)

    Petroff, P. M.; DenBaars, S. P.

    1994-01-01

    In this paper, we review our latest developments on the growth and properties of self-assembling quantum dot structures. The self-assembling growth technique which was initially developed using molecular beam epitaxy (MBE), has now been extended to metalorganic chemical vapor deposition (MOCVD). The paper first presents structural results based on atomic force and transmission electron microscopy studies of the quantum dot arrays which were obtained by MBE and MOCVD growth. From the detailed structural analysis we have observed that the formation of coherently strained dots of InAs, InAlAs, and InP dots on various cladding layer surfaces. MBE growth of InAs self-assembled dots has achieved the smallest size distribution, with dots as small as 12nm in diameter. For the MOCVD growth of InP dots we have found that the surface morphology and growth temperature of lower cladding layer growth has a profound influence on island size and density. Recent results on the optical and transport properties of the MBE grown self-assembling dot (SAD) arrays are also presented.

  13. Quantum

    CERN Document Server

    Al-Khalili, Jim

    2003-01-01

    In this lively look at quantum science, a physicist takes you on an entertaining and enlightening journey through the basics of subatomic physics. Along the way, he examines the paradox of quantum mechanics--beautifully mathematical in theory but confoundingly unpredictable in the real world. Marvel at the Dual Slit experiment as a tiny atom passes through two separate openings at the same time. Ponder the peculiar communication of quantum particles, which can remain in touch no matter how far apart. Join the genius jewel thief as he carries out a quantum measurement on a diamond without ever touching the object in question. Baffle yourself with the bizzareness of quantum tunneling, the equivalent of traveling partway up a hill, only to disappear then reappear traveling down the opposite side. With its clean, colorful layout and conversational tone, this text will hook you into the conundrum that is quantum mechanics.

  14. A “Turn-On” thiol functionalized fluorescent carbon quantum dot based chemosensory system for arsenite detection

    Energy Technology Data Exchange (ETDEWEB)

    Pooja, D., E-mail: poojaiitr@csio.res.in [Academy of Scientific and Innovative Research (AcSIR), Council of Scientific and Industrial Research, New Delhi (India); Central Scientific Instruments Organisation, Sectro-30 C, Chandigarh 160030 (India); Saini, Sonia; Thakur, Anupma; Kumar, Baban; Tyagi, Sachin [Central Scientific Instruments Organisation, Sectro-30 C, Chandigarh 160030 (India); Nayak, Manoj K. [Academy of Scientific and Innovative Research (AcSIR), Council of Scientific and Industrial Research, New Delhi (India); Central Scientific Instruments Organisation, Sectro-30 C, Chandigarh 160030 (India)

    2017-04-15

    Highlights: • Environmental friendly carbon quantum dots grafted with thiol moieties. • The functionalized CQDs demonstrated for optical detection of arsenite in water. • High analytical performance in terms of sensitivity, selectivity and detection limit (0.086 ppb). - Abstract: Carbon quantum dots (CQDs) have emerged out as promising fluorescent probes for hazardous heavy metals detection in recent past. In this study, water soluble CQDs were synthesized by facile microwave pyrolysis of citric acid & cysteamine, and functionalized with ditheritheritol to impart thiol functionalities at surface for selective detection of toxic arsenite in water. Microscopic analysis reveals that the synthesized CQDs are of uniform size (diameter ∼5 nm) and confirmed to have surface −SH groups by FT-IR. The functionalized probe is then demonstrated for arsenite detection in water by “Turn-On” read out mechanism, which reduces the possibility of false positive signals associated with “turn off’ probes reported earlier. The blue luminescent functionalized CQDs exhibit increase in fluorescence intensity on arsenite addition in 5–100 ppb wide detection range. The probe can be used for sensitive detection of arsenite in environmental water to a theoretical detection limit (3s) of 0.086 ppb (R{sup 2} = 0.9547) with good reproducibility at 2.6% relative standard deviation. The presented reliable, sensitive, rapid fCQDs probe demonstrated to exhibit high selectivity towards arsenite and exemplified for real water samples as well. The analytical performance of the presented probe is comparable to existing organic & semiconductor based optical probes.

  15. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  16. The Non-Equilibrium Statistical Distribution Function for Electrons and Holes in Semiconductor Heterostructures in Steady-State Conditions

    Directory of Open Access Journals (Sweden)

    Krzysztof Jόzwikowska

    2015-06-01

    Full Text Available The main goal of this work is to determine a statistical non-equilibrium distribution function for the electron and holes in semiconductor heterostructures in steady-state conditions. Based on the postulates of local equilibrium, as well as on the integral form of the weighted Gyarmati’s variational principle in the force representation, using an alternative method, we have derived general expressions, which have the form of the Fermi–Dirac distribution function with four additional components. The physical interpretation of these components has been carried out in this paper. Some numerical results of a non-equilibrium distribution function for an electron in HgCdTe structures are also presented.

  17. Electron - polar acoustical phonon interactions in nitride based diluted magnetic semiconductor quantum well via hot electron magnetotransport

    International Nuclear Information System (INIS)

    Pandya, Ankur; Shinde, Satyam; Jha, Prafulla K.

    2015-01-01

    In this paper the hot electron transport properties like carrier energy and momentum scattering rates and electron energy loss rates are calculated via interactions of electrons with polar acoustical phonons for Mn doped BN quantum well in BN nanosheets via piezoelectric scattering and deformation potential mechanisms at low temperatures with high electric field. Electron energy loss rate increases with the electric field. It is observed that at low temperatures and for low electric field the phonon absorption is taking place whereas, for sufficient large electric field, phonon emission takes place. Under the piezoelectric (polar acoustical phonon) scattering mechanism, the carrier scattering rate decreases with the reduction of electric field at low temperatures wherein, the scattering rate variation with electric field is limited by a specific temperature beyond which there is no any impact of electric field on such scattering

  18. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  19. The properties of Q-deformed hyperbolic and trigonometric functions in quantum deformation

    Energy Technology Data Exchange (ETDEWEB)

    Deta, U. A., E-mail: utamaalan@yahoo.co.id, E-mail: utamadeta@unesa.ac.id [Department of Physics, the State University of Surabaya (Unesa), Jl. Ketintang, Surabaya 60231 (Indonesia); Suparmi [Departmet of Physics, Sebelas Maret University, Jl. Ir. Sutami 36A Kentingan, Surakarta 57126 (Indonesia)

    2015-09-30

    Quantum deformation has been studied due to its relation with applications in nuclear physics, conformal field theory, and statistical-quantum theory. The q-deformation of hyperbolic function was introduced by Arai. The application of q-deformed functions has been widely used in quantum mechanics. The properties of this two kinds of system explained in this paper including their derivative. The graph of q-deformed functions presented using Matlab. The special case is given for modified Poschl-Teller plus q-deformed Scarf II trigonometry potentials.

  20. De Broglie wavelets versus Schroedinger wave functions: A ribbon model approach to quantum theory and the mechanisms of quantum interference

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Jau

    1996-02-01

    As an alternative to better physical explanations of the mechanisms of quantum interference and the origins of uncertainty broadening, a linear hopping model is proposed with ``color-varying`` dynamics to reflect fast exchange between time-reversed states. Intricate relations between this model, particle-wave dualism, and relativity are discussed. The wave function is shown to possess dual characteristics of a stable, localized ``soliton-like`` de Broglie wavelet and a delocalized, interfering Schroedinger carrier wave function.

  1. Quantum arrival-time distributions from intensity functions

    DEFF Research Database (Denmark)

    Wlodarz, Joachim

    2002-01-01

    The quantum time-of-arrival problem is discussed within the standard formulation of nonrelativistic quantum mechanics with parametric time. It is shown that a general class of arrival-time probability distributions results from the assumption that the arrival process of a quantum particle...... is similar in nature to other time-dependent arrival-type processes occurring, e.g., in population biology or queue theory. A simple but illustrative example related to the well-known Wigner discussion of the time-energy uncertainty relation is given and the numerical results obtained are compared...... with Kijowski's distribution [Rep. Math. Phys. 6, 362 (1974)] of arrival times for a free quantum particle....

  2. Numerical methods for semiconductor heterostructures with band nonparabolicity

    International Nuclear Information System (INIS)

    Wang Weichung; Hwang Tsungmin; Lin Wenwei; Liu Jinnliang

    2003-01-01

    This article presents numerical methods for computing bound state energies and associated wave functions of three-dimensional semiconductor heterostructures with special interest in the numerical treatment of the effect of band nonparabolicity. A nonuniform finite difference method is presented to approximate a model of a cylindrical-shaped semiconductor quantum dot embedded in another semiconductor matrix. A matrix reduction method is then proposed to dramatically reduce huge eigenvalue systems to relatively very small subsystems. Moreover, the nonparabolic band structure results in a cubic type of nonlinear eigenvalue problems for which a cubic Jacobi-Davidson method with an explicit nonequivalence deflation method are proposed to compute all the desired eigenpairs. Numerical results are given to illustrate the spectrum of energy levels and the corresponding wave functions in rather detail

  3. Manipulation of spin states in single II-VI-semiconductor quantum dots; Manipulation von Spinzustaenden in einzelnen II-VI-Halbleiter-Quantenpunkten

    Energy Technology Data Exchange (ETDEWEB)

    Hundt, Andreas

    2007-10-09

    Semiconductor quantum dots (QD) are objects on the nanometer scale, where charge carriers are confined in all three dimensions. This leads to a reduced interaction with the semiconductor lattice and to a discrete density of states. The spin state of a particle defines the polarisation of the emitted light when relaxating to an energetically lower state. Spin exchange and optical transition selection rules (conservation law for spin) define the optical control of spin states. In the examined QD in II-VI seminconductor systems the large polar character of the bindings enables to observe particle interactions by spectroscopy of the photo-luminescence (PL), making QD attractive for basic research. This work subjects in its first part single negatively charged non-magnetic QD. The odd number of carriers allows to study the latter in an unpaired state. By using polarization-resolved micro-PL spectroscopy, the spin-states of single, isolated QD can be studied reproducibly. Of special interest are exchange interactions in this few-particle system named trion. By excitation spectroscopy energetically higher states can be identified and characterized. The exchange interactions appearing here lead to state mixing and fine structure patterns in the spectra. Couplings in excited hole states show the way to the optical orientation of the resident electron spin. The spin configuration of the trion triplet state can be used to optically control the resident electron spin. Semimagnetic QD are focused in the second part of this work. The interaction with a paramagnetic environment of manganese spins leads to new magneto-optical properties of the QD. They reveal on a single dot level by line broadening due to spin fluctuations and by the giant Zeeman effect of the dot ensemble. Of special interest in this context is the influence of the reduced system dimension and the relatively larger surface of the system on the exchange mechanisms. The strong temperature dependence of the spin

  4. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

    Science.gov (United States)

    Horn, Kevin M [Albuquerque, NM

    2008-05-20

    A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

  5. Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Thuc-Quyen [UCSB; Bazan, Guillermo [UCSB; Mikhailovsky, Alexander [UCSB

    2014-04-15

    Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced

  6. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  7. Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Vexler, M. I., E-mail: vexler@mail.ioffe.ru; Illarionov, Yu. Yu.; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-04-15

    The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.

  8. Role of Precursor-Conversion Chemistry in the Crystal-Phase Control of Catalytically Grown Colloidal Semiconductor Quantum Wires.

    Science.gov (United States)

    Wang, Fudong; Buhro, William E

    2017-12-26

    Crystal-phase control is one of the most challenging problems in nanowire growth. We demonstrate that, in the solution-phase catalyzed growth of colloidal cadmium telluride (CdTe) quantum wires (QWs), the crystal phase can be controlled by manipulating the reaction chemistry of the Cd precursors and tri-n-octylphosphine telluride (TOPTe) to favor the production of either a CdTe solute or Te, which consequently determines the composition and (liquid or solid) state of the Bi x Cd y Te z catalyst nanoparticles. Growth of single-phase (e.g., wurtzite) QWs is achieved only from solid catalysts (y ≪ z) that enable the solution-solid-solid growth of the QWs, whereas the liquid catalysts (y ≈ z) fulfill the solution-liquid-solid growth of the polytypic QWs. Factors that affect the precursor-conversion chemistry are systematically accounted for, which are correlated with a kinetic study of the composition and state of the catalyst nanoparticles to understand the mechanism. This work reveals the role of the precursor-reaction chemistry in the crystal-phase control of catalytically grown colloidal QWs, opening the possibility of growing phase-pure QWs of other compositions.

  9. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  10. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  11. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  12. Dynamical nuclear polarization and confinement effects in ZnO quantum dots

    NARCIS (Netherlands)

    Baranov, P.G.; Orlinskii, S.B.; Hofmann, D.M.; de Mello Donega, C.; Meijerink, A.; Schmidt, J.

    2010-01-01

    The spatial distribution of the electronic wave function of a shallow donor (SD) in a ZnO semiconductor quantum dots (QD's) has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine (HF) interactions as monitored by electron nuclear double resonance

  13. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  14. Synthesis and performance of antifouling and self-cleaning polyethersulfone/graphene oxide composite membrane functionalized with photoactive semiconductor catalyst.

    Science.gov (United States)

    Dizge, Nadir; Gonuldas, Hakan; Ozay, Yasin; Ates, Hasan; Ocakoglu, Kasim; Harputlu, Ersan; Yildirimcan, Saadet; Unyayar, Ali

    2017-02-01

    This study was performed to synthesize membranes of polyethersulfone (PES) blended with graphene oxide (GO) and PES blended with GO functionalized with photoactive semiconductor catalyst (TiO 2 and ZnO). The antifouling and self-cleaning properties of composite membranes were also investigated. The GO was prepared from natural graphite powder by oxidation method at low temperature. TiO 2 and ZnO nanopowders were synthesized by anhydrous sol-gel method. The surface of TiO 2 and ZnO nanopowders was modified by a surfactant (myristic acid) to obtain a homogeneously dispersed mixture in a solvent, and then GO was functionalized by loading with these metal oxide nanopowders. The PES membranes blended with GO and functionalized GO into the casting solution were prepared via phase inversion method and tested for their antifouling as well as self-cleaning properties. The composite membranes were synthesized as 14%wt. of PES polymer with three different concentrations (0.5, 1.0, and 2.0%wt.) of GO, GO-TiO 2 , and GO-ZnO. The functionalization of membranes improved hydrophilicity property of membranes as compared to neat PES membrane. However, the lowest flux was obtained by functionalized membranes with GO-TiO 2 . The results showed that functionalized membranes demonstrated better self-cleaning property than neat PES membrane. Moreover, the flux recovery rate of functionalized membranes over five cycles was higher than that of neat membrane.

  15. Synthesis and characterization of CdSe/ZnS quantum dots conjugated with poly (ethylene glycol) diamine

    Energy Technology Data Exchange (ETDEWEB)

    Bharti, Shivani; Tripathi, S. K., E-mail: surya@pu.ac.in [Department of Physics, Centre of Advanced Study in Physics Panjab University, Chandigarh-160014 (India); Kaur, Gurvir [Sant Longowal Institute of Engineering & Technology, Longowal, Sangrur (India); Gupta, Shikha [Goswami Ganesh Dutta Sanatan Dharma College, Chandigarh (India)

    2015-08-28

    Bio-functionalization or surface modification is an important technique to obtain biocompatibility in semiconductor nanoparticles for biomedical applications. In this study semiconductor core/shell quantum dots of CdSe/ZnS have been prepared by chemical reduction method and then further PEGylated using Poly(ethylene glycol) diamine of M{sub w} 2000. They were characterized by UV-vis spectroscopy & Fourier transform infrared spectroscopy. The results reveals the successful PEGylation of CdSe/ZnS quantum dots.

  16. Synthesis and characterization of CdSe/ZnS quantum dots conjugated with poly (ethylene glycol) diamine

    Science.gov (United States)

    Bharti, Shivani; Kaur, Gurvir; Gupta, Shikha; Tripathi, S. K.

    2015-08-01

    Bio-functionalization or surface modification is an important technique to obtain biocompatibility in semiconductor nanoparticles for biomedical applications. In this study semiconductor core/shell quantum dots of CdSe/ZnS have been prepared by chemical reduction method and then further PEGylated using Poly(ethylene glycol) diamine of Mw 2000. They were characterized by UV-vis spectroscopy & Fourier transform infrared spectroscopy. The results reveals the successful PEGylation of CdSe/ZnS quantum dots.

  17. Adaptive function projective synchronization of two-cell Quantum-CNN chaotic oscillators with uncertain parameters

    International Nuclear Information System (INIS)

    Sudheer, K. Sebastian; Sabir, M.

    2009-01-01

    This work investigates function projective synchronization of two-cell Quantum-CNN chaotic oscillators using adaptive method. Quantum-CNN oscillators produce nano scale chaotic oscillations under certain conditions. By Lyapunove stability theory, the adaptive control law and the parameter update law are derived to make the state of two chaotic systems function projective synchronized. Numerical simulations are presented to demonstrate the effectiveness of the proposed adaptive controllers.

  18. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    , manifested by the observation of quantum well states and a surface state. The resulting shift in binding energy of both quantum well states and surface state has been interpreted in terms of the virtual crystal approximation model where the main effect of the alloying process is attributed to the change of electron density of the system. For this system, the variation of photoemission intensity as a function of photon energy has been also investigated and explained in terms of collective excitations. (orig.)

  19. Quantum computing and spintronics

    International Nuclear Information System (INIS)

    Kantser, V.

    2007-01-01

    Tentative to build a computer, which can operate according to the quantum laws, has leaded to concept of quantum computing algorithms and hardware. In this review we highlight recent developments which point the way to quantum computing on the basis solid state nanostructures after some general considerations concerning quantum information science and introducing a set of basic requirements for any quantum computer proposal. One of the major direction of research on the way to quantum computing is to exploit the spin (in addition to the orbital) degree of freedom of the electron, giving birth to the field of spintronics. We address some semiconductor approach based on spin orbit coupling in semiconductor nanostructures. (authors)

  20. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  1. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  2. Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

    Science.gov (United States)

    Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

    2017-10-01

    We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

  3. Density functional theory, natural bond orbital and quantum theory of ...

    Indian Academy of Sciences (India)

    The nature of the H-bonds were characterized by the natural bond orbital (NBO) and the quantum theory of atoms in molecule (QTAIM) analyses as well. The intramolecular H-bond formed between the amino and carboxyl oxygen atom of tryptophan was retained in most of the complexes, and the cooperativity between the ...

  4. Quantum chemical calculations of using density functional theory ...

    Indian Academy of Sciences (India)

    K RACKESH JAWAHER

    2018-02-15

    Feb 15, 2018 ... Abstract. Quantum chemical calculations have been employed to study the molecular effects produced by. Cr2O3/SnO2 optimised structure. The theoretical parameters of the transparent conducting metal oxides were calculated using DFT/B3LYP/LANL2DZ method. The optimised bond parameters such as ...

  5. Functionalized organic semiconductor molecules to enhance charge carrier injection in electroluminescent cell

    Science.gov (United States)

    Yalcin, Eyyup; Kara, Duygu Akin; Karakaya, Caner; Yigit, Mesude Zeliha; Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Demic, Serafettin; Kus, Mahmut; Aboulouard, Abdelkhalk

    2017-07-01

    Organic semiconductor (OSC) materials as a charge carrier interface play an important role to improve the device performance of organic electroluminescent cells. In this study, 4,4″-bis(diphenyl amino)-1,1':3‧,1″-terphenyl-5'-carboxylic acid (TPA) and 4,4″-di-9H-carbazol-9-yl-1,1':3‧,1″-terphenyl-5'-carboxylic acid (CAR) has been designed and synthesized to modify indium tin oxide (ITO) layer as interface. Bare ITO and PEDOT:PSS coated on ITO was used as reference anode electrodes for comparison. Furthermore, PEDOT:PSS coated over CAR/ITO and TPA/ITO to observe stability of OSC molecules and to completely cover the ITO surface. Electrical, optical and surface characterizations were performed for each device. Almost all modified devices showed around 36% decrease at the turn on voltage with respect to bare ITO. The current density of bare ITO, ITO/CAR and ITO/TPA were measured as 288, 1525 and 1869 A/m2, respectively. By increasing current density, luminance of modified devices showed much better performance with respect to unmodified devices.

  6. Some exact results for the two-point function of an integrable quantum field theory

    International Nuclear Information System (INIS)

    Creamer, D.B.; Thacker, H.B.; Wilkinson, D.

    1981-01-01

    The two-point correlation function for the quantum nonlinear Schroedinger (one-dimensional delta-function gas) model is studied. An infinite-series representation for this function is derived using the quantum inverse-scattering formalism. For the case of zero temperature, the infinite-coupling (c→infinity) result of Jimbo, Miwa, Mori, and Sato is extended to give an exact expression for the order-1/c correction to the two-point function in terms of a Painleve transcendent of the fifth kind

  7. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    Science.gov (United States)

    Forrest, Stephen R.

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  8. Functional Basis for Efficient Physical Layer Classical Control in Quantum Processors

    Science.gov (United States)

    Ball, Harrison; Nguyen, Trung; Leong, Philip H. W.; Biercuk, Michael J.

    2016-12-01

    The rapid progress seen in the development of quantum-coherent devices for information processing has motivated serious consideration of quantum computer architecture and organization. One topic which remains open for investigation and optimization relates to the design of the classical-quantum interface, where control operations on individual qubits are applied according to higher-level algorithms; accommodating competing demands on performance and scalability remains a major outstanding challenge. In this work, we present a resource-efficient, scalable framework for the implementation of embedded physical layer classical controllers for quantum-information systems. Design drivers and key functionalities are introduced, leading to the selection of Walsh functions as an effective functional basis for both programing and controller hardware implementation. This approach leverages the simplicity of real-time Walsh-function generation in classical digital hardware, and the fact that a wide variety of physical layer controls, such as dynamic error suppression, are known to fall within the Walsh family. We experimentally implement a real-time field-programmable-gate-array-based Walsh controller producing Walsh timing signals and Walsh-synthesized analog waveforms appropriate for critical tasks in error-resistant quantum control and noise characterization. These demonstrations represent the first step towards a unified framework for the realization of physical layer controls compatible with large-scale quantum-information processing.

  9. Second harmonic spectroscopy of semiconductor nanostructures

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Yu, Ping; Bozhevolnyi, Sergey I.

    1999-01-01

    Semiconductor nanostructures and their application to optoelectronic devices have attracted much attention recently. Lower-dimensional structures, and in particular quantum dots, are highly anisotropic resulting in broken symmetry as compared to their bulk counterparts. This is not only reflected...

  10. Metal-free ferromagnetic metal and intrinsic spin semiconductor: two different kinds of SWCNT functionalized BN nanoribbons.

    Science.gov (United States)

    Lou, Ping

    2015-03-28

    Two different kinds of SWCNT functionalized zigzag edge BN nanoribbons with n chains (n-ZBNNRs), namely, (a) B-edge functionalized by (m,m)SWCNT and N-edge modified with H (nZBNNR-B-(m,m)SWCNTs); and (b) the B-edge modified with H and the N-edge functionalized by (m,m)SWCNT (nZBNNR-N-(m,m)SWCNTs), have been predicted. Amazingly, we find that unlike the semiconducting and nonmagnetic H-modified n-ZBNNRs, the nZBNNR-B-(m,m)SWCNTs are intrinsic ferromagnetic metals, regardless of ribbon widths n and tube diameters (m,m). At a given (m,m), their local magnetic moments, at first, exhibit oscillation with increasing n, whereas when n is larger than 5, they are independent of n. In contrast, unlike the metallic and nonmagnetic (m,m)SWCNTs, the nZBNNR-N-(m,m)SWCNTs are ferromagnetic intrinsic spin-semiconductors with direct band gaps, regardless of n and (m,m). Their local magnetic moments and band gaps are independent of n and (m,m). The DFT calculations reveal that the process of SWCNT functionalization of the n-ZBNNRs does not need any activation energy. Moreover, the formation energies of the SWCNT functionalized n-ZBNNRs are always less than zero. Therefore, the SWCNT functionalized n-ZBNNRs are not only stable, but can also be spontaneously formed. Furthermore, compared with n-ZBNNRs, the SWCNT functionalized n-ZBNNRs show significant improvements in their thermal and mechanical stabilities. Thus, (m,m)SWCNT functionalization of n-ZBNNRs may open new routes toward practical nanoelectronic and optoelectronic as well as spintronic devices based on BNC-based materials.

  11. The q-difference operator, the quantum hyperplane, Hilbert spaces of analytic functions and q-oscillators

    International Nuclear Information System (INIS)

    Arik, M.

    1991-01-01

    It is shown that the differential calculus of Wess and Zumino for the quantum hyperplane is intimately related to the q-difference operator acting on the n-dimensional complex space C n . An explicit transformation relates the variables and the q-difference operators on C n to the variables and the quantum derivatives on the quantum hyperplane. For real values of the quantum parameter q, the consideration of the variables and the derivatives as hermitean conjugates yields a quantum deformation of the Bargmann-Segal Hilbert space of analytic functions on C n . Physically such a system can be interpreted as the quantum deformation of the n dimensional harmonic oscillator invariant under the unitary quantum group U q (n) with energy eigenvalues proportional to the basic integers. Finally, a construction of the variables and quantum derivatives on the quantum hyperplane in terms of variables and ordinary derivatives on C n is presented. (orig.)

  12. Quantum field theory in flat Robertson-Walker space-time functional Schrodinger picture

    International Nuclear Information System (INIS)

    Pi, S.Y.

    1990-01-01

    Quantum field theory in Robertson-Walker space-time is intrinsically time-dependent and the functional Schrodinger picture provides a useful description. This paper discusses free and self-interacting bosonic quantum field theories: Schrodinger picture quantization, time-dependent Gaussian approximations based on variational principles describing time evolution of pure and mixed states, and renormalizability of the Schrodinger picture. The technique introduced can be used to study various dynamical questions in early universe processes

  13. Microscopic theory of semiconductor light emission

    Science.gov (United States)

    Kira, M.; Jahnke, Frank; Hoyer, W.; Koch, Stephan W.

    2000-07-01

    A fully quantum mechanical theory for a system of photons and Coulomb interacting electron-hole pairs in semiconductors is investigated. The resulting semiconductor luminescence equations are discussed and evaluated for a variety of examples. For a quantum-well system, it is shown how luminescence at the exciton resonance can result from an incoherent electron-hole plasma. Also changes in carrier lifetimes due to radiative recombination are studied.

  14. Gauges and functional measures in quantum gravity I: Einstein theory

    Energy Technology Data Exchange (ETDEWEB)

    Ohta, N. [Department of Physics, Kindai University,Higashi-Osaka, Osaka 577-8502 (Japan); Percacci, R. [International School for Advanced Studies,via Bonomea 265, 34136 Trieste (Italy); INFN, Sezione di Trieste,Trieste (Italy); Pereira, A.D. [International School for Advanced Studies,via Bonomea 265, 34136 Trieste (Italy); Universidade Federal Fluminense, Instituto de Física, Campus da Praia Vermelha, Avenida General Milton Tavares de Souza s/n, 24210-346, Niterói, RJ (Brazil); Max Planck Institute for Gravitational Physics (Albert Einstein Institute),Am Mühlenberg 1, Potsdam 14476 (Germany)

    2016-06-20

    We perform a general computation of the off-shell one-loop divergences in Einstein gravity, in a two-parameter family of path integral measures, corresponding to different ways of parametrizing the graviton field, and a two-parameter family of gauges. Trying to reduce the gauge- and measure-dependence selects certain classes of measures and gauges respectively. There is a choice of two parameters (corresponding to the exponential parametrization and the partial gauge condition that the quantum field be traceless) that automatically eliminates the dependence on the remaining two parameters and on the cosmological constant. We observe that the divergences are invariant under a Z{sub 2} “duality” transformation that (in a particularly important special case) involves the replacement of the densitized metric by a densitized inverse metric as the fundamental quantum variable. This singles out a formulation of unimodular gravity as the unique “self-dual” theory in this class.

  15. Fuzzy electron density fragments in macromolecular quantum chemistry, combinatorial quantum chemistry, functional group analysis, and shape-activity relations.

    Science.gov (United States)

    Mezey, Paul G

    2014-09-16

    Conspectus Just as complete molecules have no boundaries and have "fuzzy" electron density clouds approaching zero density exponentially at large distances from the nearest nucleus, a physically justified choice for electron density fragments exhibits similar behavior. Whereas fuzzy electron densities, just as any fuzzy object, such as a thicker cloud on a foggy day, do not lend themselves to easy visualization, one may partially overcome this by using isocontours. Whereas a faithful representation of the complete fuzzy density would need infinitely many such isocontours, nevertheless, by choosing a selected few, one can still obtain a limited pictorial representation. Clearly, such images are of limited value, and one better relies on more complete mathematical representations, using, for example, density matrices of fuzzy fragment densities. A fuzzy density fragmentation can be obtained in an exactly additive way, using the output from any of the common quantum chemical computational techniques, such as Hartree-Fock, MP2, and various density functional approaches. Such "fuzzy" electron density fragments properly represented have proven to be useful in a rather wide range of applications, for example, (a) using them as additive building blocks leading to efficient linear scaling macromolecular quantum chemistry computational techniques, (b) the study of quantum chemical functional groups, (c) using approximate fuzzy fragment information as allowed by the holographic electron density theorem, (d) the study of correlations between local shape and activity, including through-bond and through-space components of interactions between parts of molecules and relations between local molecular shape and substituent effects, (e) using them as tools of density matrix extrapolation in conformational changes, (f) physically valid averaging and statistical distribution of several local electron densities of common stoichiometry, useful in electron density databank mining, for

  16. Fluorescence quantum efficiency of CdSe/ZnS quantum dots functionalized with amine or carboxyl groups

    International Nuclear Information System (INIS)

    Pilla, Viviane; Munin, Egberto

    2012-01-01

    The thermo-optical parameters of cadmium selenide/zinc sulfide (CdSe/ZnS) core–shell quantum dots (QDs) suspended in aqueous solutions were measured using a Thermal Lens (TL) technique. TL transient measurements were performed using the mode-mismatched dual-beam (excitation and probe) configuration. A He–Ne laser at λ p = 632.8 nm was used as the probe beam, and an Ar + laser (at λ e = 514.5 nm) was used as the excitation beam to study the effect of the core sizes (2–4 nm) of CdSe/ZnS nanocrystals functionalized with amine (R–NH 2 ) or carboxyl (R–COOH) groups. The average values of the thermal diffusivity D = (1.48 ± 0.06) × 10 −3 cm 2 /s obtained for QDs samples are in good agreement with the pure water solvent result. The fraction thermal load (φ) and radiative quantum efficiencies (η) of the functionalized CdSe/ZnS QDs were determined and compared with non-functionalized CdSe/ZnS QDs. The obtained η values for non-functionalized CdSe/ZnS are slightly higher than those for the QDs functionalized with amine or carboxyl groups.

  17. Hyperbolic metamaterials based on quantum-dot plasmon-resonator nanocomposites

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Ozel, T.; Mutlugun, E.

    2014-01-01

    We theoretically demonstrate that nanocomposites made of colloidal semiconductor quantum dot monolayers placed between metal nanoparticle monolayers can function as multilayer hyperbolic metamaterials. Depending on the thickness of the spacer between the quantum dot and nanoparticle layers......, the effective permittivity tensor of the nanocomposite is shown to become indefinite, resulting in increased photonic density of states and strong enhancement of quantum dot luminescence. This explains the results of recent experiments [T. Ozel et al., ACS Nano 5, 1328 (2011)] and confirms that hyperbolic...

  18. Electrical control of a laterally ordered InAs/InP quantum dash array

    Energy Technology Data Exchange (ETDEWEB)

    Alen, B; Fuster, D; Fernandez-Martinez, I; Gonzalez, Y; Briones, F; Gonzalez, L [IMM, Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Martinez-Pastor, J, E-mail: benito.alen@imm.cnm.csic.e [ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, PO Box 2085, 46071 Valencia (Spain)

    2009-11-25

    We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with the performance limited by the size inhomogeneity of the self-assembling process.

  19. Improving the quantum cost of reversible Boolean functions using reorder algorithm

    Science.gov (United States)

    Ahmed, Taghreed; Younes, Ahmed; Elsayed, Ashraf

    2018-05-01

    This paper introduces a novel algorithm to synthesize a low-cost reversible circuits for any Boolean function with n inputs represented as a Positive Polarity Reed-Muller expansion. The proposed algorithm applies a predefined rules to reorder the terms in the function to minimize the multi-calculation of common parts of the Boolean function to decrease the quantum cost of the reversible circuit. The paper achieves a decrease in the quantum cost and/or the circuit length, on average, when compared with relevant work in the literature.

  20. Quantum Statistical Mechanics, L-Series and Anabelian Geometry I: Partition Functions

    NARCIS (Netherlands)

    Marcolli, Matilde; Cornelissen, Gunther

    2014-01-01

    The zeta function of a number field can be interpreted as the partition function of an associated quantum statistical mechanical (QSM) system, built from abelian class field theory. We introduce a general notion of isomorphism of QSM-systems and prove that it preserves (extremal) KMS equilibrium

  1. On the zero temperature limit of the Kubo-transformed quantum time correlation function

    Science.gov (United States)

    Hernández de la Peña, Lisandro

    2014-04-01

    The zero temperature limit of several quantum time correlation functions is analysed. It is shown that while the canonical quantum time correlation function retains the full dynamical information as temperature approaches zero, the Kubo-transformed and the thermally symmetrised quantum time correlation functions lose all dynamical information at this limit. This is shown to be a consequence of the projection onto the ground state, via the limiting process of the quantities ? and ?, either together as a product, or separately. Although these findings would seem to suggest that finite-temperature methods commonly used to estimate Kubo correlation functions would be incapable of retaining any ground state dynamics, we propose a route for recovering in principle all dynamical information at the ground state. It is first shown that the usual frequency space relation between canonical and Kubo correlation functions also holds for microcanonical time correlation functions. Since the Kubo-transformed microcanonical correlation function can be obtained from the usual finite-temperature function by including a projection onto the corresponding microcanonical ensemble, finite-temperature methods, properly modified to incorporate such a constraint, can be used to capture full quantum dynamics at any arbitrary energy state, including the ground state. This approach is illustrated with the application of centroid dynamics to the ground state dynamics of the harmonic oscillator.

  2. Developing New Nanoprobes from Semiconductor Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  3. Polytellurophenes provide imaging contrast towards unravelling the structure–property–function relationships in semiconductor:insulator polymer blends

    KAUST Repository

    Jahnke, Ashlee A.

    2015-02-27

    Polymer blends are broadly important in chemical science and chemical engineering and have led to a wide range of commercial products, however their precise structure and phase morphology is often not well understood. Here we show for the first time that π-conjugated polytellurophenes and high-density polyethylene form blends that can serve as active layers in field-effect transistor devices and can be characterized by a variety of element-specific imaging techniques such as STEM and EDX. Changing the hydrocarbon content and degree of branching on the polytellurophene side-chain leads to a variety of blend structures, and these variations can be readily visualized. Characterization by electron microscopy is complemented by topographic and X-ray methods to establish a nano- to micro-scale picture of these systems. We find that blends that possess microscale networks function best as electronic devices; however, contrary to previous notions a strong correlation between nanofiber formation and electrical performance is not observed. Our work demonstrates that use of organometallic polymers assists in clarifying relevant structure–property–function relationships in multicomponent systems such as semiconductor:insulator blends and sheds light on the structure development in polymer:polymer blends including crystallization, phase separation, and formation of supramolecular arrangements.

  4. Quantum Dots

    Science.gov (United States)

    Tartakovskii, Alexander

    2012-07-01

    Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

  5. Innovative Ge Quantum Dot Functional Sensing/Metrology Devices

    Science.gov (United States)

    2015-05-20

    International Electron Devices and Materials Symposium (IEDMS), Haulien, Taiwan. (Nov19-21, 2014) (9) Wei-Ting Lai, Kuo-Ching Yang, Ting- Chia Hsu, Po...International Conference on Solid-State Devices and Materials, Tsukuba, Japan (Sep. 8-11, 2014). (12) Wei-Ting Lai, Kuo-Ching Yang, Ting- Chia Hsu, Po...Ting- Chia Hsu, Tzu-Hsuan Cheng, Tzu-Min Hsu, and Pei-Wen Li, 2014, ”Size Tunable Strain and Interfacial Engineering of Germanium Quantum Dots,” 2014

  6. A general transfer-function approach to noise filtering in open-loop quantum control

    Science.gov (United States)

    Viola, Lorenza

    2015-03-01

    Hamiltonian engineering via unitary open-loop quantum control provides a versatile and experimentally validated framework for manipulating a broad class of non-Markovian open quantum systems of interest, with applications ranging from dynamical decoupling and dynamically corrected quantum gates, to noise spectroscopy and quantum simulation. In this context, transfer-function techniques directly motivated by control engineering have proved invaluable for obtaining a transparent picture of the controlled dynamics in the frequency domain and for quantitatively analyzing performance. In this talk, I will show how to identify a computationally tractable set of ``fundamental filter functions,'' out of which arbitrary filter functions may be assembled up to arbitrary high order in principle. Besides avoiding the infinite recursive hierarchy of filter functions that arises in general control scenarios, this fundamental set suffices to characterize the error suppression capabilities of the control protocol in both the time and frequency domain. I will show, in particular, how the resulting notion of ``filtering order'' reveals conceptually distinct, albeit complementary, features of the controlled dynamics as compared to the ``cancellation order,'' traditionally defined in the Magnus sense. Implications for current quantum control experiments will be discussed. Work supported by the U.S. Army Research Office under Contract No. W911NF-14-1-0682.

  7. Einstein relation in compound semiconductors and their nanostructures

    CERN Document Server

    Bhattacharya, Sitangshu

    2008-01-01

    Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.

  8. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  9. Semiconductor Photocatalysis for Chemoselective Radical Coupling Reactions.

    Science.gov (United States)

    Kisch, Horst

    2017-04-18

    Photocatalysis at semiconductor surfaces is a growing field of general photocatalysis because of its importance for the chemical utilization of solar energy. By analogy with photoelectrochemistry the basic mechanism of semiconductor photocatalysis can be broken down into three steps: photogenerated formation of surface redox centers (electron-hole pairs), interfacial electron transfer from and to substrates (often coupled with proton-transfer), and conversion of primary redox intermediates into the products. Sun driven water cleavage and carbon dioxide fixation are still in the state of basic research whereas aerial degradation reactions of pollutants have reached practical application for the cleaning of air. In addition, a great variety of organic transformations (not syntheses) have been reported. They include cis-trans isomerizations, valence isomerizations, cycloaddition reactions, intramolecular or intermolecular C-N and C-C couplings, partial oxidations, and reductions. In all cases, well-known products were formed but very rarely also isolated. As compared to conventional homogeneous organic synthesis, the photocatalytic reaction mode is of no advantage, although the opposite is quite often claimed in the literature. It is also noted that a high quantum yield does not implicate a high product yield, since it is measured at very low substrate conversion in order to minimize secondary photoreactions. That is especially important in semiconductor photocatalysis since photocorrosion of the photocatalyst often prevents long-time irradiation, as is the case for colloidal metal sulfide semiconductors, which in general are photochemically too unstable to be used in synthesis. In this Account, we first classify the numerous organic photoreactions catalyzed by semiconductor powders. The classification is based on easily obtainable experimental facts, namely the nature of the light absorbing reaction component and the reaction stoichiometry. Next we discuss the

  10. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    Science.gov (United States)

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  11. Performance of SEM scintillation detector evaluated by modulation transfer function and detective quantum efficiency function.

    Science.gov (United States)

    Bok, Jan; Schauer, Petr

    2014-01-01

    In the paper, the SEM detector is evaluated by the modulation transfer function (MTF) which expresses the detector's influence on the SEM image contrast. This is a novel approach, since the MTF was used previously to describe only the area imaging detectors, or whole imaging systems. The measurement technique and calculation of the MTF for the SEM detector are presented. In addition, the measurement and calculation of the detective quantum efficiency (DQE) as a function of the spatial frequency for the SEM detector are described. In this technique, the time modulated e-beam is used in order to create well-defined input signal for the detector. The MTF and DQE measurements are demonstrated on the Everhart-Thornley scintillation detector. This detector was alternated using the YAG:Ce, YAP:Ce, and CRY18 single-crystal scintillators. The presented MTF and DQE characteristics show good imaging properties of the detectors with the YAP:Ce or CRY18 scintillator, especially for a specific type of the e-beam scan. The results demonstrate the great benefit of the description of SEM detectors using the MTF and DQE. In addition, point-by-point and continual-sweep e-beam scans in SEM were discussed and their influence on the image quality was revealed using the MTF. © 2013 Wiley Periodicals, Inc.

  12. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  13. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  14. Reason of method of density functional in classical and quantum statistical mechanisms

    International Nuclear Information System (INIS)

    Dinariev, O.Yu.

    2000-01-01

    Interaction between phenomenological description of a multi-component mixture on the basis of entropy functional with members, square in terms of component density gradients and temperature, on the one hand, and description in the framework of classical and quantum statistical mechanics, on the other hand, was investigated. Explicit expressions for the entropy functional in the classical and quantum theory were derived. Then a square approximation for the case of minor disturbances of uniform state was calculated. In the approximation the addends square in reference to the gradient were singlet out. It permits calculation of the relevant phenomenological coefficients from the leading principles [ru

  15. Real-time functional integral approach to the quantum disordered spin systems

    International Nuclear Information System (INIS)

    Kopec, T.K.

    1989-01-01

    In this paper the effect of randomness and frustration in the quantum Ising spin glass in a transverse field is studied by using the thermofield dynamics (TFD), the real time, finite temperature quantum field theory. It is shown that the method can be conveniently used for the averaging of the free energy of the system by completely avoiding the use of the n-replica trick. The effective dynamic Lagrangian for the disorder averaged causal, correlations and response Green functions is derived by functional integral approach. Furthermore, the properties of this Lagrangian are analyzed by the saddle point method which leads to the self-consistent equation for the spin glass order parameter

  16. Quantum Numbers and the Eigenfunction Approach to Obtain Symmetry Adapted Functions for Discrete Symmetries

    Directory of Open Access Journals (Sweden)

    Renato Lemus

    2012-11-01

    Full Text Available The eigenfunction approach used for discrete symmetries is deduced from the concept of quantum numbers. We show that the irreducible representations (irreps associated with the eigenfunctions are indeed a shorthand notation for the set of eigenvalues of the class operators (character table. The need of a canonical chain of groups to establish a complete set of commuting operators is emphasized. This analysis allows us to establish in natural form the connection between the quantum numbers and the eigenfunction method proposed by J.Q. Chen to obtain symmetry adapted functions. We then proceed to present a friendly version of the eigenfunction method to project functions.

  17. Wigner functions for the pair angle and orbital angular momentum. Possible applications in quantum information theories

    Energy Technology Data Exchange (ETDEWEB)

    Kastrup, H.A. [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany). Theory Group

    2017-10-17

    The framework of Wigner functions for the canonical pair angle and orbital angular momentum, derived and analyzed in 2 recent papers [H. A. Kastrup, Phys. Rev. A 94, 062113(2016) and Phys. Rev. A 95, 052111(2017)], is applied to elementary concepts of quantum information like qubits and 2-qubits, e.g., entangled EPR/Bell states etc. Properties of the associated Wigner functions are discussed and illustrated. The results may be useful for quantum information experiments with orbital angular momenta of light beams or electron beams.

  18. Ultrafast Degenerate Transient Lens Spectroscopy in Semiconductor Nanosctructures

    Directory of Open Access Journals (Sweden)

    Leontyev A.V.

    2015-01-01

    Full Text Available We report the non-resonant excitation and probing of the nonlinear refractive index change in bulk semiconductors and semiconductor quantum dots through degenerate transient lens spectroscopy. The signal oscillates at the center laser field frequency, and the envelope of the former in quantum dots is distinctly different from the one in bulk sample. We discuss the applicability of this technique for polarization state probing in semiconductor media with femtosecond temporal resolution.

  19. Revised diode equation for Ideal Graphene-Semiconductor Schottky Junction

    OpenAIRE

    Liang, Shi-Jun; Ang, Lay Kee

    2015-01-01

    In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

  20. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2010-05-01

    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.