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Sample records for fully epitaxial magnetic

  1. Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO{sub 3} interface (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Radaelli, G., E-mail: greta.radaelli@gmail.com; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R. [LNESS Center - Dipartimento di Fisica del Politecnico di Milano, Como 22100 (Italy)

    2014-05-07

    Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO{sub 3} (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures.

  2. Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited)

    International Nuclear Information System (INIS)

    Radaelli, G.; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R.

    2014-01-01

    Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO 3 (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures

  3. Electronic structure of fully epitaxial Co2TiSn thin films

    Energy Technology Data Exchange (ETDEWEB)

    Meinert, Markus; Schmalhorst, Jan; Wulfmeier, Hendrik; Reiss, Gunter; Arenholz, Elke; Graf, Tanja; Felser, Claudia

    2010-10-28

    In this article we report on the properties of thin films of the full Heusler compound Co{sub 2}TiSn prepared by DC magnetron co-sputtering. Fully epitaxial, stoichiometric films were obtained by deposition on MgO (001) substrates at substrate temperatures above 600 C. The films are well ordered in the L2{sub 1} structure, and the Curie temperature exceeds slightly the bulk value. They show a significant, isotropic magnetoresistance and the resistivity becomes strongly anomalous in the paramagnetic state. The films are weakly ferrimagnetic, with nearly 1 {mu}{sub B} on the Co atoms, and a small antiparallel Ti moment, in agreement with theoretical expectations. From comparison of x-ray absorption spectra on the Co L{sub 3,2} edges, including circular and linear magnetic dichroism, with ab initio calculations of the x-ray absorption and circular dichroism spectra we infer that the electronic structure of Co{sub 2}TiSn has essentially non-localized character. Spectral features that have not been explained in detail before, are explained here in terms of the final state band structure.

  4. Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

    International Nuclear Information System (INIS)

    Idigoras, O.; Suszka, A. K.; Berger, A.; Vavassori, P.; Obry, B.; Hillebrands, B.; Landeros, P.

    2014-01-01

    This work studies the influence of crystallographic alignment onto magnetization reversal in partially epitaxial Co films. A reproducible growth sequence was devised that allows for the continuous tuning of grain orientation disorder in Co films with uniaxial in-plane anisotropy by the controlled partial suppression of epitaxy. While all stable or meta-stable magnetization states occurring during a magnetic field cycle exhibit a uniform magnetization for fully epitaxial samples, non-uniform states appear for samples with sufficiently high grain orientation disorder. Simultaneously with the occurrence of stable domain states during the magnetization reversal, we observe a qualitative change of the applied field angle dependence of the coercive field. Upon increasing the grain orientation disorder, we observe a disappearance of transient domain wall propagation as the dominating reversal process, which is characterized by an increase of the coercive field for applied field angles away from the easy axis for well-ordered epitaxial samples. Upon reaching a certain disorder threshold level, we also find an anomalous magnetization reversal, which is characterized by a non-monotonic behavior of the remanent magnetization and coercive field as a function of the applied field angle in the vicinity of the nominal hard axis. This anomaly is a collective reversal mode that is caused by disorder-induced frustration and it can be qualitatively and even quantitatively explained by means of a two Stoner-Wohlfarth particle model. Its predictions are furthermore corroborated by Kerr microscopy and by Brillouin light scattering measurements

  5. Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

    Science.gov (United States)

    Idigoras, O.; Suszka, A. K.; Vavassori, P.; Obry, B.; Hillebrands, B.; Landeros, P.; Berger, A.

    2014-02-01

    This work studies the influence of crystallographic alignment onto magnetization reversal in partially epitaxial Co films. A reproducible growth sequence was devised that allows for the continuous tuning of grain orientation disorder in Co films with uniaxial in-plane anisotropy by the controlled partial suppression of epitaxy. While all stable or meta-stable magnetization states occurring during a magnetic field cycle exhibit a uniform magnetization for fully epitaxial samples, non-uniform states appear for samples with sufficiently high grain orientation disorder. Simultaneously with the occurrence of stable domain states during the magnetization reversal, we observe a qualitative change of the applied field angle dependence of the coercive field. Upon increasing the grain orientation disorder, we observe a disappearance of transient domain wall propagation as the dominating reversal process, which is characterized by an increase of the coercive field for applied field angles away from the easy axis for well-ordered epitaxial samples. Upon reaching a certain disorder threshold level, we also find an anomalous magnetization reversal, which is characterized by a non-monotonic behavior of the remanent magnetization and coercive field as a function of the applied field angle in the vicinity of the nominal hard axis. This anomaly is a collective reversal mode that is caused by disorder-induced frustration and it can be qualitatively and even quantitatively explained by means of a two Stoner-Wohlfarth particle model. Its predictions are furthermore corroborated by Kerr microscopy and by Brillouin light scattering measurements.

  6. Magnetic state controllable critical temperature in epitaxial Ho/Nb bilayers

    Directory of Open Access Journals (Sweden)

    Yuanzhou Gu

    2014-04-01

    Full Text Available We study the magnetic properties of Ho thin films with different crystallinity (either epitaxial or non-epitaxial and investigate their proximity effects with Nb thin films. Magnetic measurements show that epitaxial Ho has large anisotropy in two different crystal directions in contrast to non-epitaxial Ho. Transport measurements show that the superconducting transition temperature (Tc of Nb thin films can be significantly suppressed at zero field by epitaxial Ho compared with non-epitaxial Ho. We also demonstrate a direct control over Tc by changing the magnetic states of the epitaxial Ho layer, and attribute the strong proximity effects to exchange interaction.

  7. Quantum Hall effect in epitaxial graphene with permanent magnets

    Science.gov (United States)

    Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

    2016-12-01

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  8. Quantum Hall effect in epitaxial graphene with permanent magnets.

    Science.gov (United States)

    Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

    2016-12-06

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  9. Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

    Science.gov (United States)

    Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

    2018-04-25

    In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

  10. Structure and magnetism of single-phase epitaxial gamma '-Fe4N

    NARCIS (Netherlands)

    Costa-Kramer, JL; Borsa, DM; Garcia-Martin, JM; Martin-Gonzalez, MS; Boerma, DO; Briones, F

    Single phase epitaxial pure gamma(')-Fe4N films are grown on MgO (001) by molecular beam epitaxy of iron in the presence of nitrogen obtained from a radio frequency atomic source. The epitaxial, single phase nature of the films is revealed by x-ray diffraction and by the local magnetic environment

  11. Magnetic x-ray dichroism in ultrathin epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, J.G.; Goodman, K.W. [Lawrence Berkeley National Lab., CA (United States); Cummins, T.R. [Univ. of Missouri, Rolla, MO (United States)] [and others

    1997-04-01

    The authors have used Magnetic X-ray Linear Dichroism (MXLD) and Magnetic X-ray Circular Dichroism (MXCD) to study the magnetic properties of epitaxial overlayers in an elementally specific fashion. Both MXLD and MXCD Photoelectron Spectroscopy were performed in a high resolution mode at the Spectromicroscopy Facility of the ALS. Circular Polarization was obtained via the utilization of a novel phase retarder (soft x-ray quarter wave plate) based upon transmission through a multilayer film. The samples were low temperature Fe overlayers, magnetic alloy films of NiFe and CoNi, and Gd grown on Y. The authors results include a direct comparison of high resolution angle resolved Photoelectron Spectroscopy performed in MXLD and MXCD modes as well as structural studies with photoelectron diffraction.

  12. Magnetic x-ray dichroism in ultrathin epitaxial films

    International Nuclear Information System (INIS)

    Tobin, J.G.; Goodman, K.W.; Cummins, T.R.

    1997-01-01

    The authors have used Magnetic X-ray Linear Dichroism (MXLD) and Magnetic X-ray Circular Dichroism (MXCD) to study the magnetic properties of epitaxial overlayers in an elementally specific fashion. Both MXLD and MXCD Photoelectron Spectroscopy were performed in a high resolution mode at the Spectromicroscopy Facility of the ALS. Circular Polarization was obtained via the utilization of a novel phase retarder (soft x-ray quarter wave plate) based upon transmission through a multilayer film. The samples were low temperature Fe overlayers, magnetic alloy films of NiFe and CoNi, and Gd grown on Y. The authors results include a direct comparison of high resolution angle resolved Photoelectron Spectroscopy performed in MXLD and MXCD modes as well as structural studies with photoelectron diffraction

  13. Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Pramanik, Tanmoy, E-mail: pramanik.tanmoy@utexas.edu; Roy, Anupam, E-mail: anupam@austin.utexas.edu; Dey, Rik, E-mail: rikdey@utexas.edu; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C.P.; Hsieh, Cheng-Chih; Banerjee, Sanjay K.

    2017-09-01

    Highlights: • Perpendicular magnetic anisotropy in epitaxial Cr{sub 2}Te{sub 3} has been investigated. • Presence of a relatively strong second order anisotropy contribution is observed. • Magnetization reversal is explained quantitatively using a 1D defect model. • Relative roles of nucleation and pinning in magnetization reversal are discussed. • Domain structures and switching process are visualized by micromagnetic simulation. - Abstract: We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

  14. Substrate-induced magnetism in epitaxial graphene buffer layers.

    Science.gov (United States)

    Ramasubramaniam, A; Medhekar, N V; Shenoy, V B

    2009-07-08

    Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

  15. Magnetically induced martensite transition in freestanding epitaxial Ni-Mn-Ga films

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Thomas, M.; Niemann, R.; Schultz, L.; Fähler, S.

    2009-01-01

    Roč. 94, č. 15 (2009), 152513/1-152513/3 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z10100520 Keywords : epitaxial growth * Ni-Mn-Ga alloys * magnetic epitaxial layers * magnetic transitions * martensitic transformations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.554, year: 2009 http://link.aip.org/link/?APPLAB/94/152513/1

  16. Magnetic and electrical properties of epitaxial GeMn

    Energy Technology Data Exchange (ETDEWEB)

    Ahlers, Stefan

    2009-01-15

    In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

  17. Magnetic properties of epitaxial CoCr films with depth-dependent exchange-coupling profiles

    Science.gov (United States)

    Fallarino, Lorenzo; Kirby, Brian J.; Pancaldi, Matteo; Riego, Patricia; Balk, Andrew L.; Miller, Casey W.; Vavassori, Paolo; Berger, Andreas

    2017-04-01

    We present a study of the compositional and temperature-dependent magnetic properties of epitaxial CoCr thin films whose composition has a bathtublike depth profile Co /C o1 →1 -xcC r0 →xc/C o1 -xcC rxc/Co1 -x c→1C rxc→0/Co with the highest Cr concentration (xc) at the center of the sample. Polarized neutron reflectometry (PNR) shows that the effective Curie temperature varies as a function of depth and exhibits a minimum in the center of the structure. Correspondingly, we observe that the effective coupling between the two outer Co layers is strongly dependent on the magnetization of the graded CoCr spacer and can be continuously tuned via xc and temperature T . In particular, for xc=0.28 , magnetometry reveals a transition from one-step to two-step reversal behavior for temperatures T > 260 K, indicating a transition from a fully correlated magnetic film structure to an uncoupled system containing effectively two independent magnetic sublayers. Corroborating evidence of the temperature-dependent coupling of the top and bottom regions for xc=0.28 was revealed by PNR, which demonstrated the field-dependent occurrence of antiparallel magnetization alignment on opposite interfaces at sufficiently high temperatures only.

  18. Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure

    Science.gov (United States)

    Khalid, N.; Kim, J.-Y.; Ionescu, A.; Hussain, T.; Oehler, F.; Zhu, T.; Oliver, R. A.; Farrer, I.; Ahmad, R.; Barnes, C. H. W.

    2018-03-01

    We present the structural and magnetic properties of fully epitaxial Fe(110)/MgO(111)/GaN(0001) tunnel barrier structures grown by molecular beam epitaxy. In-situ reflection high-energy electron diffraction and ex-situ X-ray diffraction measurements indicate epitaxial Fe(110) films on top of an epitaxial 2 nm MgO(111) tunnel barrier on GaN(0001). X-ray reflectivity measurements confirm a roughness of approximately 0.3 nm and 0.7 nm for the MgO/GaN and the Fe/MgO interfaces, respectively. Results of in-situ magneto-optical Kerr effect measurements indicate that 1 nm thick Fe film shows signs of in-plane ferromagnetism at room temperature. Vibrating sample magnetometer measurements determine the saturation magnetisation of the 5 nm thick film to be 1660 ± 100 emu/cm3 and show that this system has a predominant uniaxial anisotropy contribution despite the presence of cyclic twinned crystals. We estimate the values of effective uniaxial ( KUeff) and cubic ( K1eff) anisotropy constants to be 11700 ± 170 erg cm-3 and -3300 ± 700 erg cm-3 by fitting the angular dependence of the magnetising energy.

  19. Fully Kinetic Ion Models for Magnetized Plasma Simulations

    Science.gov (United States)

    Sturdevant, Benjamin J.

    This thesis focuses on the development of simulation models, based on fully resolving the gyro-motion of ions with the Lorentz force equations of motion, for studying low-frequency phenomena in well-magnetized plasma systems. Such models, known as fully kinetic ion models, offer formal simplicity over higher order gyrokinetic ion models and may provide an important validation tool or replacement for gyrokinetic ion models in applications where the gyrokinetic ordering assumptions are in question. Methods for dealing with the added difficulty of resolving the short time scales associated with the ion gyro-motion in fully kinetic ion models are explored with the use of graphics processing units (GPUs) and advanced time integration algorithms, including sub-cycling, orbit averaging and variational integrators. Theoretical work is performed to analyze the effects of the ion Bernstein modes, which are known to cause difficulties in simulations based on fully kinetic ion models. In addition, the first simulation results for the ion temperature gradient driven instability in toroidal geometry using a fully kinetic ion model are presented. Finally, during the course of this work, a method for analyzing the effects of a finite time step size and spatial grid in the delta-f approach to the particle-in-cell method was developed for the first time. This method was applied to an implicit time integration scheme and has revealed some unusual numerical properties related to the delta-f method.

  20. Reorientation of magnetic anisotropy in epitaxial cobalt ferrite thin films

    NARCIS (Netherlands)

    Lisfi, A.; Williams, C.M.; Nguyen, L.T.; Lodder, J.C.; Coleman, A.; Corcoran, H.; Johnson, A.; Chang, P.; Abhishek Kumar, A.K.; Kumar, A.; Morgan, W.

    2007-01-01

    Spin reorientation has been observed in CoFe2O4 thin single crystalline films epitaxially grown on (100) MgO substrate upon varying the film thickness. The critical thickness for such a spin-reorientation transition was estimated to be 300 nm. The reorientation is driven by a structural transition

  1. Magnetic property tuning of epitaxial spinel ferrite thin films by strain and composition modulation

    Science.gov (United States)

    Kang, Young-Min; Lee, Seung Han; Kim, Tae Cheol; Jeong, Jaeeun; Yang, Daejin; Han, Kyu-Sung; Kim, Dong Hun

    2017-10-01

    Epitaxial spinel ferrite CoFe2O4 and NiFe2O4 thin films and bilayers of NiFe2O4 and CoFe2O4 have been grown by pulsed laser deposition on (001)-oriented SrTiO3 and MgO substrates. Both the single layer thin films showed epitaxial growth on MgO substrates with out-of-plane magnetic easy axis, originating from the out-of-plane compressive strain and negative magnetostriction constant. However, films on SrTiO3 substrates exhibited a magnetic easy axis along the in-plane. Magnetic hysteresis loops showed intermediate shape between magnetically hard CoFe2O4 and magnetically soft NiFe2O4 without two-step switching. Interdiffusion between spinel phases was suppressed using a blocking layer of MgO.

  2. Magnetic anisotropy and domain structure of manganese ferrite grown epitaxially on MgO

    NARCIS (Netherlands)

    van den Berg, Klaas; Lodder, J.C.; Mensinga, T.C.

    1976-01-01

    The properties of polycrystalline manganese ferrite thin films have been discussed in previous papers. The present study was undertaken to obtain supplementary information on the magnetic anisotropy and domain properties of the films. The ferrite films were grown epitaxially by an evaporation

  3. Complex Magnetic Exchange Coupling between Co Nanostructures and Ni(111) across Epitaxial Graphene.

    Science.gov (United States)

    Barla, Alessandro; Bellini, Valerio; Rusponi, Stefano; Ferriani, Paolo; Pivetta, Marina; Donati, Fabio; Patthey, François; Persichetti, Luca; Mahatha, Sanjoy K; Papagno, Marco; Piamonteze, Cinthia; Fichtner, Simon; Heinze, Stefan; Gambardella, Pietro; Brune, Harald; Carbone, Carlo

    2016-01-26

    We report on the magnetic coupling between isolated Co atoms as well as small Co islands and Ni(111) mediated by an epitaxial graphene layer. X-ray magnetic circular dichroism and scanning tunneling microscopy combined with density functional theory calculations reveal that Co atoms occupy two distinct adsorption sites, with different magnetic coupling to the underlying Ni(111) surface. We further report a transition from an antiferromagnetic to a ferromagnetic coupling with increasing Co cluster size. Our results highlight the extreme sensitivity of the exchange interaction mediated by graphene to the adsorption site and to the in-plane coordination of the magnetic atoms.

  4. Reversal of lattice, electronic structure, and magnetism in epitaxial SrCoOx thin films

    Science.gov (United States)

    Jeen, H.; Choi, W. S.; Lee, J. H.; Cooper, V. R.; Lee, H. N.; Seo, S. S. A.; Rabe, K. M.

    2014-03-01

    SrCoOx (x = 2.5 - 3.0, SCO) is an ideal material to study the role of oxygen content for electronic structure and magnetism, since SCO has two distinct topotactic phases: the antiferromagnetic insulating brownmillerite SrCoO2.5 and the ferromagnetic metallic perovskite SrCoO3. In this presentation, we report direct observation of a reversible lattice and electronic structure evolution in SrCoOx epitaxial thin films as well as different magnetic and electronic ground states between the topotactic phases.[2] By magnetization measurements, optical absorption, and transport measurements drastically different electronic and magnetic ground states are found in the epitaxially grown SrCoO2.5 and SrCoO3 thin films by pulsed laser epitaxy. First-principles calculations confirm substantial, which originate from the modification in the Co valence states and crystallographic structures. By real-time spectroscopic ellipsometry, the two electronically and magnetically different phases can be reversibly changed by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides. The work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

  5. Oxygen pressure-tuned epitaxy and magnetic properties of magnetite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Junran [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Liu, Wenqing [York-Nanjing Joint Centre (YNJC) for Spintronics and Nanoengineering, Department of Electronics, The University of York, YO10 3DD (United Kingdom); Zhang, Minhao; Zhang, Xiaoqian; Niu, Wei; Gao, Ming [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wang, Xuefeng, E-mail: xfwang@nju.edu.cn [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Du, Jun [School of Physics, Nanjing University, Nanjing 210093 (China); Zhang, Rong [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu, Yongbing, E-mail: ybxu@nju.edu.cn [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); York-Nanjing Joint Centre (YNJC) for Spintronics and Nanoengineering, Department of Electronics, The University of York, YO10 3DD (United Kingdom)

    2017-06-15

    Highlights: • Quasi-2D Fe{sub 3}O{sub 4} films were obtained by PLD. • RHEED under different oxygen pressure were observed. • Influence of oxygen pressure on Fe{sub 3}O{sub 4} films were investigated. • Epitaxy and magnetic properties were tuned by oxygen pressure. • The ratio of Fe{sup 2+}/Fe{sup 3+} fitted by XPS is the tuned factor of M{sub s}. - Abstract: Quasi-two-dimensional magnetite epitaxial thin films have been synthesized by pulsed laser deposition technique at various oxygen pressures. The saturation magnetizations of the magnetite films were found to decrease from 425 emu/cm{sup 3}, which is close to the bulk value, to 175 emu/cm{sup 3} as the growth atmospheres varying from high vacuum (∼1 × 10{sup −8} mbar) to oxygen pressure of 1 × 10{sup −3} mbar. The ratio of the Fe{sup 3+} to Fe{sup 2+} increases from 2 to 2.7 as oxygen pressure increasing shown by XPS fitting, which weakens the net magnetic moment generated by Fe{sup 2+} at octahedral sites as the spins of the Fe{sup 3+} ions at octahedral and tetrahedral sites are aligned in antiparallel. The results offer direct experimental evidence of the influence to the Fe{sup 3+}/Fe{sup 2+} ratio and the magnetic moment in magnetite epitaxy films by oxygen pressure, which is significant for spintronic applications.

  6. Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V. [Taurida National V.I. Vernadsky University, Vernadsky Avenue, 4, 95007 Simferopol (Ukraine); Salyuk, O.Yu. [Institute of Magnetism NASU and MESU, 36-B Vernadsky Blvd., 03142 Kiev (Ukraine); Golub, V.O., E-mail: golub@imag.kiev.ua [Institute of Magnetism NASU and MESU, 36-B Vernadsky Blvd., 03142 Kiev (Ukraine)

    2015-11-15

    Magnetic properties of Bi{sub 1.5}Gd{sub 1.5}Fe{sub 4.5}Al{sub 0.5}O{sub 12} (84 nm) and Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi{sub 1.5}Gd{sub 1.5}Fe{sub 4.5}Al{sub 0.5}O{sub 12}/Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction.

  7. Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

    International Nuclear Information System (INIS)

    Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V.; Salyuk, O.Yu.; Golub, V.O.

    2015-01-01

    Magnetic properties of Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 (84 nm) and Bi 2.8 Y 0.2 Fe 5 O 12 (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 /Bi 2.8 Y 0.2 Fe 5 O 12 bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction

  8. Structure and Magnetism of Nanocrystalline and Epitaxial (Mn,Zn,Fe)3O4

    Science.gov (United States)

    2012-01-01

    excitation. In particular, photomagnetism has been observed in a few spinel structure materials,2,3 including doped spinel structure ferrites and... ferrite films have been identified to exhibit photomagnetic effects at room temperature.7,8 Because optical sensitivity of spinel ferrites can be...and epitaxial (Mn,Zn,Fe)3O4 (MZFO) spinel thin films with their magnetic properties. X-ray diffraction (XRD) studies indicate that room temperature

  9. Controlling the magnetic anisotropy in epitaxial Cr2O3 clusters by an electric field

    Science.gov (United States)

    Halley, David; Najjari, Nabil; Godel, Florian; Hamieh, Mohamad; Doudin, Bernard; Henry, Yves

    2015-06-01

    Magnetic properties of Cr2O3 epitaxial clusters inserted in an Fe/MgO/Fe tunnel barrier are revealed by their tunnel magnetoresistance signature. The cluster assembly has been shown in a previous work to behave as a superparamagnet when a magnetic field was applied in the plane of the tunnel junction. We here demonstrate that an external large out-of plane electric field (in the order of 0.5 GV/m) favors in-plane magnetization orientation. This is due to an electric-field-induced magnetic anisotropy along the normal to the plane, corresponding to large anisotropy fields reaching up to 2 T. The assembly of clusters is thus strictly speaking not superparamagnetic and its magnetization cannot be exactly described by a Langevin law. This is attributed either to a strain-induced enhanced magnetoelectric effect or to a voltage-induced change of the magnetic anisotropy at interfaces with MgO.

  10. Magnetism and deformation of epitaxial Pd and Rh thin films

    Czech Academy of Sciences Publication Activity Database

    Káňa, Tomáš; Hüger, E.; Legut, D.; Čák, M.; Šob, Mojmír

    2016-01-01

    Roč. 93, č. 13 (2016), č. článku Art. number 134422. ISSN 2469-9950 R&D Projects: GA MŠk(CZ) LQ1601; GA ČR(CZ) GA16-24711S Institutional support: RVO:68081723 Keywords : ab initio calculations * magnetism * palladium * rhodium * thin films * deformation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  11. Electronic and magnetic properties of epitaxial perovskite SrCrO₃(0 0 1).

    Science.gov (United States)

    Zhang, K H L; Du, Y; Sushko, P V; Bowden, M E; Shutthanandan, V; Qiao, L; Cao, G X; Gai, Z; Sallis, S; Piper, L F J; Chambers, S A

    2015-06-24

    We have investigated the intrinsic properties of SrCrO3 epitaxial thin films synthesized by molecular beam epitaxy. We find compelling evidence that SrCrO3 is a correlated metal. X-ray photoemission valence band and O K-edge x-ray absorption spectra indicate a strongly hybridized Cr3d-O2p state crossing the Fermi level, leading to metallic behavior. Comparison between valence band spectra near the Fermi level and the densities of states calculated using density functional theory (DFT) suggests the presence of coherent and incoherent states and points to strong electron correlation effects. The magnetic susceptibility can be described by Pauli paramagnetism at temperatures above 100 K, but reveals antiferromagnetic behavior at lower temperatures, possibly resulting from orbital ordering.

  12. Tuning of Transport and Magnetic Properties in Epitaxial LaMnO3+δ Thin Films

    Directory of Open Access Journals (Sweden)

    J. Chen

    2014-01-01

    Full Text Available The effect of compressive strain on the transport and magnetic properties of epitaxial LaMnO3+δ thin films has been investigated. It is found that the transport and magnetic properties of the LaMnO3+δ thin films grown on the LaAlO3 substrates can be tuned by the compressive strain through varying film thickness. And the insulator-metal transition, charge/orbital ordering transition, and paramagnetic-ferromagnetic transition are suppressed by the compressive strain. Consequently, the related electronic and magnetic transition temperatures decrease with an increase in the compressive strain. The present results can be explained by the strain-controlled lattice deformation and the consequent orbital occupation. It indicates that the lattice degree of freedom is crucial for understanding the transport and magnetic properties of the strongly correlated LaMnO3+δ.

  13. Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy.

    Science.gov (United States)

    Krichevtsov, Boris B; Gastev, Sergei V; Suturin, Sergey M; Fedorov, Vladimir V; Korovin, Alexander M; Bursian, Viktor E; Banshchikov, Alexander G; Volkov, Mikhail P; Tabuchi, Masao; Sokolov, Nikolai S

    2017-01-01

    Thin (4-20 nm) yttrium iron garnet (Y 3 Fe 5 O 12 , YIG) layers have been grown on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , GGG) 111-oriented substrates by laser molecular beam epitaxy in 700-1000 °C growth temperature range. The layers were found to have atomically flat step-and-terrace surface morphology with step height of 1.8 Å characteristic for YIG(111) surface. As the growth temperature is increased from 700 to 1000 °C the terraces become wider and the growth gradually changes from layer by layer to step-flow regime. Crystal structure studied by electron and X-ray diffraction showed that YIG lattice is co-oriented and laterally pseudomorphic to GGG with small rhombohedral distortion present perpendicular to the surface. Measurements of magnetic moment, magneto-optical polar and longitudinal Kerr effect (MOKE), and X-ray magnetic circular dichroism (XMCD) were used for study of magnetization reversal for different orientations of magnetic field. These methods and ferromagnetic resonance studies have shown that in zero magnetic field magnetization lies in the film plane due to both shape and induced anisotropies. Vectorial MOKE studies have revealed the presence of an in-plane easy magnetization axis. In-plane magnetization reversal was shown to occur through combination of reversible rotation and abrupt irreversible magnetization jump, the latter caused by domain wall nucleation and propagation. The field at which the flip takes place depends on the angle between the applied magnetic field and the easy magnetization axis and can be described by the modified Stoner-Wohlfarth model taking into account magnetic field dependence of the domain wall energy. Magnetization curves of individual tetrahedral and octahedral magnetic Fe 3+ sublattices were studied by XMCD.

  14. Fully deuterated microorganisms: Tools in magnetic resonance and neutron scattering

    International Nuclear Information System (INIS)

    Crespi, H.L.

    1988-01-01

    Current work at Argonne emphasizes the use of fully deuterated algae and cyanobacteria as tools in the study of photosynthesis and as a source of complex substrates for the culture of engineered overproducing bacteria. 17 refs., 1 fig., 1 tab

  15. Fully deuterated microorganisms: Tools in magnetic resonance and neutron scattering

    Energy Technology Data Exchange (ETDEWEB)

    Crespi, H.L.

    1988-01-01

    Current work at Argonne emphasizes the use of fully deuterated algae and cyanobacteria as tools in the study of photosynthesis and as a source of complex substrates for the culture of engineered overproducing bacteria. 17 refs., 1 fig., 1 tab.

  16. β-Detected NMR Search for Magnetic Phase Separation in Epitaxial GaAs:Mn

    Science.gov (United States)

    Song, Q.; Chow, K. H.; Miller, R. I.; Fan, I.; Hossain, M. D.; Kiefl, R. F.; Morris, G. D.; Kreitzman, S. R.; Levy, C. D. P.; Parolin, T. J.; Pearson, M. R.; Salman, Z.; Saadaoui, H.; Smadella, M.; Wang, D.; Yu, K. M.; Liu, X.; Furdyna, J. K.; MacFarlane, W. A.

    To test for the microscopic magnetic phase separation in the dilute magnetic semiconductor Ga1-xMnxAs sug-gested by low energy muon spin rotation measurements[1], we present a detailed analysis of the amplitudes of the 8Li β-detected nuclear magnetic resonance in an epitaxially grown thin film of x = 5.4% Mn doped GaAs on a semi-insulating GaAs substrate with magnetic transition temperature TC =72 K. The spectrum at 100 K corresponds to 73% of the full room temperature amplitude, and at 60 K to about 62%. The 11% loss of signal through the magnetic tran-sition is much smaller than that ∼ 50% found by low energy μSR[1], and may be entirely due to an amplitude change intrinsic to GaAs. This lack of evidence for phase separation is, however, consistent with the full volume fraction magnetism found by a second low energy μSR measurement on a different sample using weak transverse field[2].

  17. Strain Induced Magnetism in SrRuO3 Epitaxial Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Grutter, A.; Wong, F.; Arenholz, E.; Liberati, M.; Suzuki, Y.

    2010-01-10

    Epitaxial SrRuO{sub 3} thin films were grown on SrTiO{sub 3}, (LaAlO{sub 3}){sub 0.3}(SrAlO{sub 3}){sub 0.7} and LaAlO{sub 3} substrates inducing different biaxial compressive strains. Coherently strained SrRuO{sub 3} films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 {micro}{sub B} per formula unit. A comparison of (001) and (110) SrRuO{sub 3} films on each substrate indicates that films on (110) oriented have consistently higher saturated moments than corresponding (001) films. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.

  18. Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

    Science.gov (United States)

    Song, Q.; Chow, K. H.; Miller, R. I.; Fan, I.; Hossain, M. D.; Kiefl, R. F.; Kreitzman, S. R.; Levy, C. D. P.; Parolin, T. J.; Pearson, M. R.; Salman, Z.; Saadaoui, H.; Smadella, M.; Wang, D.; Yu, K. M.; Liu, X.; Furdyna, J. K.; MacFarlane, W. A.

    2009-04-01

    A low energy beam of spin polarized 8Li + has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.

  19. Tailoring of magnetic properties of ultrathin epitaxial Fe films by Dy doping

    Directory of Open Access Journals (Sweden)

    A. A. Baker

    2015-07-01

    Full Text Available We report on the controlled modification of relaxation parameters and magnetic moments of epitaxial Fe thin films through Dy doping. Ferromagnetic resonance measurements show that an increase of Dy doping from 0.1% to 5% gives a tripling in Gilbert damping, and more importantly a strongly enhanced anisotropic damping that can be qualitatively understood through the slow-relaxing impurity model. X-ray magnetic circular dichroism measurements show a pronounced suppression of the orbital moment of the Fe with Dy doping, leading to an almost threefold drop in the orbital to spin moment ratio, ml/ms. Doping with Dy can therefore be used to control both dynamic and static properties of thin ferromagnetic films for improved performance in spintronics device applications, mediated through the antiferromagnetic interaction of the 4f and 3d states.

  20. Tailoring of magnetic properties of ultrathin epitaxial Fe films by Dy doping

    Energy Technology Data Exchange (ETDEWEB)

    Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom); Hesjedal, T. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom)

    2015-07-15

    We report on the controlled modification of relaxation parameters and magnetic moments of epitaxial Fe thin films through Dy doping. Ferromagnetic resonance measurements show that an increase of Dy doping from 0.1% to 5% gives a tripling in Gilbert damping, and more importantly a strongly enhanced anisotropic damping that can be qualitatively understood through the slow-relaxing impurity model. X-ray magnetic circular dichroism measurements show a pronounced suppression of the orbital moment of the Fe with Dy doping, leading to an almost threefold drop in the orbital to spin moment ratio, m{sub l}/m{sub s}. Doping with Dy can therefore be used to control both dynamic and static properties of thin ferromagnetic films for improved performance in spintronics device applications, mediated through the antiferromagnetic interaction of the 4f and 3d states.

  1. Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

    Energy Technology Data Exchange (ETDEWEB)

    Song, Q., E-mail: susan@phas.ubc.c [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Chow, K.H. [Department of Physics, University of Alberta, Edmonton, AB, T6G 2G7 (Canada); Miller, R.I. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Fan, I. [Department of Physics, University of Alberta, Edmonton, AB, T6G 2G7 (Canada); Hossain, M.D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Kiefl, R.F. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Canadian Institute of Advanced Research (Canada); Kreitzman, S.R.; Levy, C.D.P. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Parolin, T.J. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Pearson, M.R.; Salman, Z. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Saadaoui, H.; Smadella, M.; Wang, D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Yu, K.M. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Liu, X.; Furdyna, J.K. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); MacFarlane, W.A. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada)

    2009-04-15

    A low energy beam of spin polarized {sup 8}Li{sup +} has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.

  2. Effect of epitaxial strain and lattice mismatch on magnetic and transport behaviors in metamagnetic FeRh thin films

    Directory of Open Access Journals (Sweden)

    Yali Xie

    2017-05-01

    Full Text Available We grew 80 nm FeRh films on different single crystals with various lattice constants. FeRh films on SrTiO3 (STO and MgO substrates exhibit an epitaxial growth of 45° in-plane structure rotation. In contrast, FeRh on LaAlO3 (LAO displays a mixed epitaxial growth of both 45° in-plane structure rotation and cube-on-cube relationships. Due to the different epitaxial growth strains and lattice mismatch values, the critical temperature for the magnetic phase transition of FeRh can be changed between 405 and 360 K. In addition, the external magnetic field can shift this critical temperature to low temperature in different rates for FeRh films grown on different substrates. The magnetoresistance appears a maximum value at different temperatures between 320 and 380 K for FeRh films grown on different substrates.

  3. Effect of epitaxial strain and lattice mismatch on magnetic and transport behaviors in metamagnetic FeRh thin films

    Science.gov (United States)

    Xie, Yali; Zhan, Qingfeng; Shang, Tian; Yang, Huali; Wang, Baomin; Tang, Jin; Li, Run-Wei

    2017-05-01

    We grew 80 nm FeRh films on different single crystals with various lattice constants. FeRh films on SrTiO3 (STO) and MgO substrates exhibit an epitaxial growth of 45° in-plane structure rotation. In contrast, FeRh on LaAlO3 (LAO) displays a mixed epitaxial growth of both 45° in-plane structure rotation and cube-on-cube relationships. Due to the different epitaxial growth strains and lattice mismatch values, the critical temperature for the magnetic phase transition of FeRh can be changed between 405 and 360 K. In addition, the external magnetic field can shift this critical temperature to low temperature in different rates for FeRh films grown on different substrates. The magnetoresistance appears a maximum value at different temperatures between 320 and 380 K for FeRh films grown on different substrates.

  4. Tuning the magnetism of epitaxial cobalt oxide thin films by electron beam irradiation

    Science.gov (United States)

    Lan, Q. Q.; Zhang, X. J.; Shen, X.; Yang, H. W.; Zhang, H. R.; Guan, X. X.; Wang, W.; Yao, Y.; Wang, Y. G.; Peng, Y.; Liu, B. G.; Sun, J. R.; Yu, R. C.

    2017-07-01

    Tuning magnetic properties of perovskite thin films is a central topic of recent studies because of its fundamental significance. In this work, we demonstrated the modification of the magnetism of L a0.9C a0.1Co O3 (LCCO) thin films by introducing a stripelike superstructure in a controllable manner using electron beam irradiation (EBI) in a transmission electron microscope. The microstructure, electronic structure, strain change, and origin of magnetism of the LCCO thin films were studied in detail using aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations based on density functional theory. The results indicate that the EBI-induced unit cell volume expansion accompanies the formation of oxygen vacancies and leads to the spin state transition of Co ions. The low spin state of C o4 + ions depress the stripelike superstructure, while higher spin states of Co ions with lower valences are conductive to the formation of "dark stripes". Our work clarifies the origin of magnetism of epitaxial LCCO thin films, benefiting a comprehensive understanding of correlated physics in cobalt oxide thin films.

  5. Contributions of magnetic properties in epitaxial copper-doped ZnO.

    Science.gov (United States)

    Liu, Hongyan; Zeng, Fei; Gao, Shuang; Wang, Guangyue; Song, Cheng; Pan, Feng

    2013-08-21

    Diluted magnetic semiconductors have great potential in applications for biological detection and spintronics. However, the origin of magnetism is complex and it is of significant importance to clarify the contributions from various origins. We prepared epitaxial copper-doped ZnO films and investigated the origin of ferromagnetism by combining various characterization methods. The results show that, with nominal Cu concentrations of up to 7.3 at.%, the Cu atoms substitute for the Zn atoms and form strong covalence bonds (Cu(Zn)-O), which show a property commensurate with that of the Zn-O bonds in the ZnO host. With further increases in Cu concentrations, the substitutional Cu(Zn) effect is obscured, and the [Cu(Zn)O4] clusters, regulated by the wurtzite ZnO host, segregate into CuO phase after annealing in air. Magnetization in volume increases with increasing Cu content up to about 7.3 at.% and then decreases with further increase, while the magnetic moment per Cu atom decreases monotonically with the increase in Cu content. We have demonstrated that the substitution of Cu for Zn and the presence of strong Cu(Zn)-O bonds are necessary for ferromagnetism while the [Cu(Zn)O4] clusters are detrimental to the ferromagnetism. The enhancement of ferromagnetism in volume is strongly correlated with the moderate oxygen vacancy mediated Cu ions.

  6. Magnetic Field Sensing by Exploiting Giant Nonstrain-Mediated Magnetodielectric Response in Epitaxial Composites.

    Science.gov (United States)

    Kang, Min Gyu; Kang, Han Byul; Clavel, Michael; Maurya, Deepam; Gollapudi, Sreenivasulu; Hudait, Mantu; Sanghadasa, Mohan; Priya, Shashank

    2018-04-10

    Heteroepitaxial magnetoelectric (ME) composites are promising for the development of a new generation of multifunctional devices, such as sensors, tunable electronics, and energy harvesters. However, challenge remains in realizing practical epitaxial composite materials, mainly due to the interfacial lattice misfit strain between magnetostrictive and piezoelectric phases and strong substrate clamping that reduces the strain-mediated ME coupling. Here, we demonstrate a nonstrain-mediated ME coupling in PbZr 0.52 Ti 0.48 O 3 (PZT)/La 0.67 Sr 0.33 MnO 3 (LSMO) heteroepitaxial composites that resolves these challenges, thereby, providing a giant magnetodielectric (MD) response of ∼27% at 310 K. The factors driving the magnitude of the MD response were found to be the magnetoresistance-coupled dielectric dispersion and piezoelectric strain-mediated modulation of magnetic moment. Building upon this giant MD response, we demonstrate a magnetic field sensor architecture exhibiting a high sensitivity of 54.7 pF/T and desirable linearity with respect to the applied external magnetic field. The demonstrated technique provides a new mechanism for detecting magnetic fields based upon the MD effect.

  7. Temperature dependence of resistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions

    Science.gov (United States)

    Ma, Q. L.; Wang, S. G.; Zhang, J.; Wang, Yan; Ward, R. C. C.; Wang, C.; Kohn, A.; Zhang, X.-G.; Han, X. F.

    2009-08-01

    The temperature dependence of resistance in parallel (P) and antiparallel (AP) configurations (RP,AP) has been investigated in epitaxial Fe/MgO/Fe junctions with varying MgO barrier thicknesses tMgO. RAP exhibits a substantial decrease with increasing temperature for samples with tMgO ranging from 3.0 to 1.5 nm. In contrast, RP is approximately temperature independent when tMgO=3.0 nm and increases with temperature when tMgO=2.1 and 1.5 nm. Possible origins of this temperature dependence of resistance, which include taking into account a spin independent term and consideration of spin-flip scattering, are discussed. We attribute the temperature dependence of RP,AP to the misalignment of magnetic moments in the electrodes due to thermal excitations and its effect on the spin dependent tunneling.

  8. Iron Oxide Nanoparticle-Based Magnetic Ink Development for Fully Printed Tunable Radio-Frequency Devices

    KAUST Repository

    Vaseem, Mohammad

    2018-01-30

    The field of printed electronics is still in its infancy and most of the reported work is based on commercially available nanoparticle-based metallic inks. Although fully printed devices that employ dielectric/semiconductor inks have recently been reported, there is a dearth of functional inks that can demonstrate controllable devices. The lack of availability of functional inks is a barrier to the widespread use of fully printed devices. For radio-frequency electronics, magnetic materials have many uses in reconfigurable components but rely on expensive and rigid ferrite materials. A suitable magnetic ink can facilitate the realization of fully printed, magnetically controlled, tunable devices. This report presents the development of an iron oxide nanoparticle-based magnetic ink. First, a tunable inductor is fully printed using iron oxide nanoparticle-based magnetic ink. Furthermore, iron oxide nanoparticles are functionalized with oleic acid to make them compatible with a UV-curable SU8 solution. Functionalized iron oxide nanoparticles are successfully embedded in the SU8 matrix to make a magnetic substrate. The as-fabricated substrate is characterized for its magnetostatic and microwave properties. A frequency tunable printed patch antenna is demonstrated using the magnetic and in-house silver-organo-complex inks. This is a step toward low-cost, fully printed, controllable electronic components.

  9. Magnetic anisotropy of epitaxial Fe layers grown on Si(0 0 1)

    International Nuclear Information System (INIS)

    Bertoncini, P.; Wetzel, P.; Berling, D.; Mehdaoui, A.; Loegel, B.; Gewinner, G.; Poinsot, R.; Pierron-Bohnes, V.

    2001-01-01

    The magnetic properties of epitaxial iron films up to 80 monolayers (ML) thickness grown on Si(0 0 1) by using a template technique were investigated by means of superconducting quantum interference device and magneto-optic Kerr effect techniques. The thinnest films investigated (∼3 ML) exhibit a composition close to Fe 3 Si with a Curie temperature below room temperature (RT) and strong out-of-plane remanent magnetization that reflects the presence of a dominant second order surface anisotropy term. Thicker films (≥4 ML) are ferromagnetic at RT with remanent magnetization in film-plane and a composition closer to pure Fe with typically 8-10% silicon content. When deposited at normal incidence such films show simple in-plane fourfold anisotropy without uniaxial contribution. The relevant fourth-order effective anisotropy constant K 4 eff was measured versus film thickness and found to change its sign near 18 ML. The origin of this remarkable behavior is investigated by means of a Neel model and mainly traced back to fourth-order surface anisotropy and magneto-elastic effects related to the large biaxial in-plane compressive strain up to 3.5% in the thinnest (≤25 ML) films

  10. Magnetic properties of epitaxial MnAs thin films on GaAs (001)

    CERN Document Server

    Park, Y S

    2000-01-01

    The magnetic properties of two types of epitaxial MnAs films on GaAs (001) substrates in the thickness range of 20 approx 200 nm were studied. Using longitudinal a magneto-optical Kerr-effect(MOKE) apparatus at lambda=632.8 nm, we determined the Curie temperatures of the 100-nm thick films to be 54.0+-0.5 .deg. C and 63.7+-0.5 .deg. C for type A films and type B films, respectively. The observed Curie temperatures corresponded to increases of 36.8 .deg. C and 33.9 .deg. C per one percent increase in the unit cell volume for type A and B, respectively. The normalized maximum MOKE signal from the type A film exhibited a first-order-like magnetic transition while that of type B underwent a second-order-like transition. These different behaviors between types A and B stem from different residual stresses being exerted on the hexagonal phase. Utilizing a Foner-type vibrating sample magnetometer at room temperature, we examined the thickness dependence of the coercive force and the saturation magnetization of the f...

  11. Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate

    Science.gov (United States)

    Li, Li; Guo, Y.; Cui, X. Y.; Zheng, Rongkun; Ohtani, K.; Kong, C.; Ceguerra, A. V.; Moody, M. P.; Ye, J. D.; Tan, H. H.; Jagadish, C.; Liu, Hui; Stampfl, C.; Ohno, H.; Ringer, S. P.; Matsukura, F.

    2012-05-01

    In order to unravel the magnetism of Co-doped ZnO films, we have performed rigorous experiments on Co-doped ZnO grown on O-polar ZnO (0001¯) substrates by molecular beam epitaxy. We find that the ZnO:Co with Co composition less than 20% is paramagnetic even at low temperatures, whereas that with Co composition of 20% shows ferromagnetism at room temperature. Although an additional n-type doping with Ga increases the magnitude of magnetization, the origin of the observed ferromagnetism is not carrier induced, as confirmed by electric-field effect measurements. Three-dimensional atom probe tomography shows that Co ions are randomly distributed, indicating that Co clustering or spinodal decomposition is not the origin of the ferromagnetism either. One possible mechanism for the ferromagnetism is hydrogen-facilitated interaction, which is supported experimentally by magnetic measurements on hydrogen-treated ZnO:Co as well as theoretically by first-principles calculation.

  12. Magnetic and magnetoelastic properties of epitaxial SmFe{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Fuente, C de la; Arnaudas, J I; Ciria, M; Del Moral, A [Departamento de Magnetismo de Solidos and Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de los Materiales de Aragon and Universidad de Zaragoza, 50071, Zaragoza (Spain); Dufour, C; Dumesnil, K, E-mail: cesar@unizar.e [Laboratoire de Metallurgie Physique et de Science des Materiaux, Universite Henry Poincare, Nancy 1, BP 239, 54506 (France)

    2010-02-03

    We report on magnetic and magnetoelastic measurements for a 5000 A (110) SmFe{sub 2} thin film, which was successfully analyzed by means of a point charge model for describing the effect of the epitaxial growth in this kind of system. Some of the main conclusions of the Moessbauer and magnetoelastic results and the new magnetization results up to 5 T allow us to get a full description of the crystal electric field, exchange, and magnetoelastic behavior in this compound. So, new single-ion parameters are obtained for the crystal field interaction of samarium ions, A{sub 4}(r{sup 4}) = +755 K/ion and A{sub 6}(r{sup 6}) = -180 K/ion, and new single-ion magnetoelastic coupling B{sup gamma}{sup ,2}approx =-200 MPa and B{sup epsilon}{sup ,2}approx =800 MPa, which represent the tetragonal and the in-plane shear deformations, respectively. Moreover, the new thermal behavior of the samarium magnetic moment, the exchange coupling parameter, and the magnetocrystalline anisotropy of the iron sublattice are obtained too. From these, the softening of the spin reorientation transition with respect to the bulk case could be accounted for.

  13. A fully implicit method for 3D quasi-steady state magnetic advection-diffusion.

    Energy Technology Data Exchange (ETDEWEB)

    Siefert, Christopher; Robinson, Allen Conrad

    2009-09-01

    We describe the implementation of a prototype fully implicit method for solving three-dimensional quasi-steady state magnetic advection-diffusion problems. This method allows us to solve the magnetic advection diffusion equations in an Eulerian frame with a fixed, user-prescribed velocity field. We have verified the correctness of method and implementation on two standard verification problems, the Solberg-White magnetic shear problem and the Perry-Jones-White rotating cylinder problem.

  14. Studies of free-to-bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor-phase epitaxy and molecular-beam epitaxy

    Science.gov (United States)

    Zemon, S.; Norris, P.; Koteles, E. S.; Lambert, G.

    1986-04-01

    Photoluminescence in an applied magnetic field is shown to be useful for the identification of trace acceptor impurities in GaAs. For an epitaxial layer grown by metalorganic vapor-phase epitaxy (MOVPE), a trace concentration of zinc acceptors was detected in a sample where the zinc transitions were obscured in zero magnetic field. In material grown by molecular-beam epitaxy (MBE), the 1.47-eV transition was identified as a conduction-band-to-deep-acceptor process. Also identified was a shallow impurity, magnesium or beryllium, not detected in zero field. Resolved Landau level transitions and the magnetic splitting of conduction-band-to-acceptor transitions were observed in both MOVPE and MBE material.

  15. Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

    Directory of Open Access Journals (Sweden)

    M. C. Onbasli

    2014-10-01

    Full Text Available Yttrium iron garnet (YIG, Y 3Fe5O12 films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd3Ga5O12 substrates with (100 orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe, near-bulk room temperature saturation moments (∼135 emu cm−3, in-plane easy axis, and damping parameters as low as 2.2 × 10−4. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

  16. In-situ grazing incidence X-ray diffraction measurements of relaxation in Fe/MgO/Fe epitaxial magnetic tunnel junctions during annealing

    Energy Technology Data Exchange (ETDEWEB)

    Eastwood, D.S. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Ali, M.; Hickey, B.J. [Department of Physics and Astronomy, University of Leeds, Leeds LS2 1JT (United Kingdom); Tanner, B.K., E-mail: b.k.tanner@dur.ac.uk [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom)

    2013-12-15

    The relaxation of Fe/MgO/Fe tunnel junctions grown epitaxially on (001) MgO substrates has been measured by in-situ grazing incidence in-plane X-ray diffraction during the thermal annealing cycle. We find that the Fe layers are fully relaxed and that there are no irreversible changes during annealing. The MgO tunnel barrier is initially strained towards the Fe but on annealing, relaxes and expands towards the bulk MgO value. The strain dispersion is reduced in the MgO by about 40% above 480 K post-annealing. There is no significant change in the “twist” mosaic. Our results indicate that the final annealing stage of device fabrication, crucial to attainment of high TMR, induces substantial strain relaxation at the MgO barrier/lower Fe electrode interface. - Highlights: • Lattice relaxation of Fe/MgO/Fe epitaxial magnetic tunnel junctions measured. • In-plane lattice parameter of Fe equal to bulk value; totally relaxed. • MgO barrier initially strained towards the Fe but relaxes on annealing. • Reduction in strain dispersion in the MgO barrier by 40% above about 470 K. • No change in the in-plane “twist” mosaic throughout the annealing cycle.

  17. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    International Nuclear Information System (INIS)

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

  18. A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

    Science.gov (United States)

    Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

    2011-05-01

    A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

  19. Controlling the magnetic anisotropy in epitaxial Y3F e5O12 films by manganese doping

    Science.gov (United States)

    Wang, C. T.; Liang, X. F.; Zhang, Y.; Liang, X.; Zhu, Y. P.; Qin, J.; Gao, Y.; Peng, B.; Sun, N. X.; Bi, L.

    2017-12-01

    Controlling the magnetic anisotropy in epitaxial Y3F e5O12 (YIG) thin films is critical for magnonic and photonic device applications. In this paper, we report the crystal structure, magnetic properties, and magnetic anisotropy of epitaxial Y3(F e5 -xM nx ) O12 (Mn:YIG) thin films grown on G d3G a5O12 (111) (GGG) substrates by pulsed-laser deposition. Mn doping is observed to strongly enhance the magnetoelastic coefficient of YIG thin films, which leads to large tunability of the thin film magnetic anisotropy by lattice strain. With increasing Mn concentration from x =0 to x =1.25 , a continuous increase of out-of-plane magnetic anisotropy ranging from -644.4 Oe to 1337.5 Oe is observed. In particular, a perpendicular magnetic anisotropy (PMA) is achieved in Mn:YIG thin films with a high Mn concentration of x =1.12 . Ferromagnetic resonance (FMR) measurements show low FMR linewidths of 3.4 Oe to 129 Oe at 9.5 GHz in Mn:YIG thin films. Our paper demonstrates manganese doping as an effective way to enhance the magnetoelastic anisotropy of YIG thin films by strain, which is useful for magnonic and magneto-optical device applications.

  20. Solution-Based Epitaxial Growth of Magnetically Responsive Cu@Ni Nanowires

    KAUST Repository

    Zhang, Shengmao

    2010-02-23

    An experiment was conducted to show the solution-based epitaxial growth of magnetically responsive Cu@Ni nanowires. The Ni-sheathed Cu nanowires were synthesized with a one-pot approach. 30 mL of high concentration NaOH, Cu(NO3)2. 3H2O, Cu(NO3)2. 3H2O and 0.07-0.30 mL of Ni(NO3)2. 6H 2O aqueous solutions were added into a plastic reactor with a capacity of 50.0 mL. A varying amount of ethylenediamine (EDA) and hydrazine were also added sequentially, followed by thorough mixing of all reagents. The dimension, morphology, and chemical composition of the products were examined with scanning electron microscopy with energy dispersive X-ray spectroscopy. The XPS analysis on the as formed Cu nanowires confirms that there is indeed no nickel inclusion in the nanowires prior to the formation of nickel overcoat, which rules out the possibility of Cu-Ni alloy formation.

  1. Mn doping effect on structure and magnetism of epitaxial (FePt)1-xMnx films

    International Nuclear Information System (INIS)

    Huang, J.C.A.; Chang, Y.C.; Yu, C.C.; Yao, Y.D.; Hu, Y.M.; Fu, C.M.

    2003-01-01

    We study the structure and perpendicular magnetism of molecular beam epitaxy grown (FePt) 1-x Mn x films with doping concentration x=0, 1%, 2%, 3%, 4%, and 5%. The (FePt) 1-x Mn x films were made by multilayers growth of [Fe/Pt/Mn]xN at 100 deg. C and annealed at 600 deg. C. X-ray diffraction scans indicate that relatively better L1 0 ordered structure for low Mn doping (x 3%. The perpendicular magnetic anisotropy effect of the (FePt) 1-x Mn x films tends to decrease with the increase of Mn doping for x>1%. However, the x=1% doped films possess slightly better perpendicular magnetic anisotropy effect than the zero doped film. The perpendicular magnetic anisotropy constant are of about 1.3x10 7 and 1.6x10 7 erg/cm 3 for x=0% and x=1%, respectively

  2. Study of electronic structure and magnetic properties of epitaxial Co{sub 2}FeAl Heusler Alloy Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Soni, S. [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Dalela, S., E-mail: sdphysics@rediffmail.com [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Sharma, S.S. [Department of Physics, Govt. Women Engineering College, Ajmer (India); Liu, E.K.; Wang, W.H.; Wu, G.H. [State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Kumar, M. [Department of Physics, Malviya National Institute of Technology, Jaipur-302017 (India); Garg, K.B. [Department of Physics, University of Rajasthan, Jaipur-302004 (India)

    2016-07-25

    This work reports the magnetic and electronic characterization of plane magnetized buried Heusler Co{sub 2}FeAl nano thin films of different thickness by X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) measurements. . The spectra on both Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence, corresponding to a ferromagnetically-aligned moments on Fe and Co atoms conditioning the peculiar characteristics of the Co{sub 2}FeAl Heusler compound (a half-metallic ferromagnet). The detailed knowledge of the related magnetic and electronic properties of these samples over a wide range of thickness of films are indispensable for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications. - Highlights: • Electronic structure and Magnetic Properties of Epitaxial Co{sub 2}FeAl Heusler Films. • X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). • Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence. • Calculated Orbital, Spin and total magnetic moments of Fe and Co for 30 nm Co{sub 2}FeAl thin film. • The total magnetic moment of Fe at L{sub 2,3} edges increases with the thickness of the Co2FeAl films.

  3. Development of Automotive Permanent Magnet Alternator with Fully Controlled AC/DC Converter

    OpenAIRE

    Tareq S. El-Hasan

    2018-01-01

    This paper proposes the design of a three-phase axial flux permanent magnet alternator (AFPMA) that is characterized with an air-cored stator and two-rotor (ACSTR) configuration. The AFPMA is harnessed with fully controlled AC/DC converter using six bridge Insulated Gate Bipolar Transistor (IGBTs) capable to deliver a constant DC output power as an attempt to replace the Lundell alternator for automotive applications. First, the design methodology and analysis of the AFPMA is introduced. The ...

  4. Thickness dependence of magnetic anisotropy and intrinsic anomalous Hall effect in epitaxial Co{sub 2}MnAl film

    Energy Technology Data Exchange (ETDEWEB)

    Meng, K.K., E-mail: kkmeng@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Miao, J.; Xu, X.G. [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhao, J.H. [State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Jiang, Y. [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

    2017-04-04

    We have investigated the thickness dependence of magnetic anisotropy and intrinsic anomalous Hall effect (AHE) in single-crystalline full-Heusler alloy Co{sub 2}MnAl (CMA) grown by molecular-beam epitaxy on GaAs(001). The magnetic anisotropy is the interplay of uniaxial and the fourfold anisotropy, and the corresponding anisotropy constants have been deduced. Considering the thickness of CMA is small, we ascribe it to the influence from interface stress. The AHE in CMA is found to be well described by a proper scaling. The intrinsic anomalous conductivity is found to be smaller than the calculated one and is thickness dependent, which is ascribed to the influence of chemical ordering by affecting the band structure and Fermi surface. - Highlights: • Single-crystalline full-Heusler alloy Co{sub 2}MnAl grown by molecular-beam epitaxy. • Uniaxial and the fourfold magnetic anisotropies in Heusler alloys. • Anomalous Hall effect in Heusler alloys. • The intrinsic contributions modified by chemical ordering.

  5. Structural and magnetic phase transitions in chromium nitride thin films grown by rf nitrogen plasma molecular beam epitaxy

    Science.gov (United States)

    Alam, Khan; Disseler, Steven M.; Ratcliff, William D.; Borchers, Julie A.; Ponce-Pérez, Rodrigo; Cocoletzi, Gregorio H.; Takeuchi, Noboru; Foley, Andrew; Richard, Andrea; Ingram, David C.; Smith, Arthur R.

    2017-09-01

    A magnetostructural phase transition is investigated in single-crystal chromium nitride (CrN) thin films grown by rf plasma molecular beam epitaxy on MgO(001) substrates. While still within the vacuum environment following molecular beam epitaxy growth, in situ low-temperature scanning tunneling microscopy, and in situ variable low-temperature reflection high-energy electron diffraction are applied, revealing an atomically smooth and metallic CrN(001) surface, and an in-plane structural transition from 1 ×1 (primitive CrN unit cell) to √{2 }×√{2 }-R 45∘ with a transition temperature of (278 ±3 ) K, respectively. Ex situ temperature-dependent measurements using neutron diffraction are also performed, looking at the structural peaks and likewise revealing a first-order structural transition along the [111] out-of-plane direction, with transition temperatures of (268 ± 3) K. Turning to the magnetic peaks, neutron diffraction confirms a clear magnetic transition from paramagnetic at room temperature to antiferromagnetic at low temperatures with a sharp, first-order phase transition and a Néel temperature of (270 ±2 ) K or (280 ±2 ) K for two different films. In addition to the experimental measurements of structural and magnetic ordering, we also discuss results from first-principles theoretical calculations which explore various possible magnetostructural models.

  6. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    Science.gov (United States)

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  7. Constraining Fully Convective Magnetic Dynamos using Brown Dwarf Auroral Radio Emission

    Science.gov (United States)

    Kao, Melodie; Hallinan, Gregg; Pineda, J. Sebastian; Escala, Ivanna; Burgasser, Adam; Bourke, Stephen; Stevenson, David

    2017-05-01

    An important outstanding problem in dynamo theory is understanding how magnetic fields are generated and sustained in fully convective objects, spanning stars through planets. For fully convective dynamo models to accurately predict exoplanet magnetic fields, pushing measurements to include the coolest T and Y dwarfs at the substellar-planetary boundary is critical. A number of models for possible dynamo mechanisms in this regime have been proposed but constraining data on magnetic field strengths and topologies across a wide range of mass, age, rotation rate, and temperature are sorely lacking, particularly in the brown dwarf regime.Detections of highly circularly polarized pulsed radio emission provide our only window into magnetic field measurements for objects in the ultracool brown dwarf regime. However, these detections are very rare; previous radio surveys encompassing ∼60 L6 or later targets have yielded only one detection. We have developed a selection strategy for biasing survey targets by leveraging the emergence of magnetic activity that is driven by planet-like auroral processes in the coolest brown dwarfs. Using our selection strategy, we previously observed six late L and T dwarfs with the Jansky Very Large Array (VLA) at 4-8 GHz and detected the presence of highly circularly polarized radio emission for five targets. Our initial detections provided the most robust constraints on dynamo theory in this regime, confirming magnetic fields >2.5 kG. To further probe the mechanisms driving fully convective dynamos at the substellar-planetary boundary, we present magnetic field constraints for two Y-dwarfs and 8-12 GHz radio observations of late L and T dwarfs corresponding to >3.6 kG surface fields. We additionally present initial results for a comprehensive L and T dwarf survey spanning a wide range of rotation periods to test rotation-dominated dynamo models. Finally, we present a method for comparing magnetic field measurements derived from

  8. Fully-automated field mapping of a dipole magnet of a multi-passage spectrometer (MPS)

    Energy Technology Data Exchange (ETDEWEB)

    Meissner, Robert; Thirolf, Peter; Weber, Christine [Fakultaet fuer Physik, LMU - Muenchen (Germany)

    2013-07-01

    MLLTRAP is a Penning-trap mass-spectrometer facility, which is currently being commissioned at the Maier-Leibnitz Laboratory in Garching. Here, atomic mass values are determined by measuring cyclotron frequencies of stored ions in a strong magnetic field. In the future, highly-charged ions should be utilized for an improvement in the achievable mass accuracy. For this purpose, singly-charged ions will have to be injected into a charge-breeding device, such as an EBIT, and transferred back towards the Penning traps, while being q/A selected. To fulfill these tasks a multi-passage-spectrometer (MPS) is being built. It consists of a fast-ramping, round-pole dipole magnet with an electrostatic mirror system. A basic requirement for building the MPS is a detailed knowledge on the magnetic field produced by the magnet. It is necessary to simulate the trajectories of the ions and gain knowledge on the design and geometry of the electrostatic mirror system and the vacuum chamber. For this purpose, a robot was designed, which - powered by three step motors - measures the magnetic field fully automated. The robot moves a Hall probe within three dimensions with a resolution of 1 mm and an uncertainty of 0.5 mm. In this presentation, the development of the robot, its control and data acquisition via LabView and the results are presented.

  9. Epitaxial patterning of nanometer-thick Y3Fe5O12 films with low magnetic damping.

    Science.gov (United States)

    Li, Shaozhen; Zhang, Wei; Ding, Junjia; Pearson, John E; Novosad, Valentine; Hoffmann, Axel

    2016-01-07

    Magnetic insulators such as yttrium iron garnet, Y3Fe5O12, with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and efficient spin current generation and transmission. We demonstrate here reliable and efficient epitaxial growth and nanopatterning of Y3Fe5O12 thin-film based nanostructures on insulating Gd3Ga5O12 substrates. In particular, our fabrication process is compatible with conventional sputtering and lift-off, and does not require aggressive ion milling which may be detrimental to the oxide thin films. Their structural and magnetic properties indicate good qualities, in particular low magnetic damping of both films and patterned structures. The dynamic magnetic properties of the nanostructures are systematically investigated as a function of the lateral dimension. By comparing with ferromagnetic nanowire structures, a distinct edge mode in addition to the main mode is identified by both experiments and simulations, which also exhibit cross-over with the main mode upon varying the width of the wires. The non-linear evolution of dynamic modes over nanostructural dimensions highlights the important role of size confinement to their material properties in magnetic devices where Y3Fe5O12 nanostructures serve as the key functional component.

  10. Strain-mediated magnetic and transport properties of epitaxial LuxFe3-xO4 films

    Science.gov (United States)

    Wang, P.; Jin, C.; Zheng, D. X.; Bai, H. L.

    2015-10-01

    Strain mediated structure, magnetic, and transport properties of spinel ferrites were investigated by growing epitaxial LuxFe3-xO4 (LFO, 0 ≤ x ≤ 0.26 ) films on SrTiO3 and MgO substrates with in-plane compressive and tensile strains, respectively. The lattice parameter of LFO films decreases on SrTiO3 substrates, while increases on MgO substrates with the increasing Lu content. The LFO films on SrTiO3 substrates exhibit larger saturation magnetization and smaller exchange bias and coercive field. Phase shift of anisotropic magnetoresistance is also observed in the LFO films on SrTiO3 substrates. In addition, the nonmagnetic Lu3+ ions in spinel ferrites enhance the spin canting, which further increases the exchange bias and coercive field and strengthens the four-fold symmetry of anisotropic magnetoresistance and the two-fold symmetry of planar Hall effect.

  11. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    Science.gov (United States)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  12. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-01-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  13. Real-time visualization of magnetic flux densities for transcranial magnetic stimulation on commodity and fully immersive VR systems

    Science.gov (United States)

    Kalivarapu, Vijay K.; Serrate, Ciro; Hadimani, Ravi L.

    2017-05-01

    Transcranial Magnetic Stimulation (TMS) is a non-invasive procedure that uses time varying short pulses of magnetic fields to stimulate nerve cells in the brain. In this method, a magnetic field generator ("TMS coil") produces small electric fields in the region of the brain via electromagnetic induction. This technique can be used to excite or inhibit firing of neurons, which can then be used for treatment of various neurological disorders such as Parkinson's disease, stroke, migraine, and depression. It is however challenging to focus the induced electric field from TMS coils to smaller regions of the brain. Since electric and magnetic fields are governed by laws of electromagnetism, it is possible to numerically simulate and visualize these fields to accurately determine the site of maximum stimulation and also to develop TMS coils that can focus the fields on the targeted regions. However, current software to compute and visualize these fields are not real-time and can work for only one position/orientation of TMS coil, severely limiting their usage. This paper describes the development of an application that computes magnetic flux densities (h-fields) and visualizes their distribution for different TMS coil position/orientations in real-time using GPU shaders. The application is developed for desktop, commodity VR (HTC Vive), and fully immersive VR CAVETM systems, for use by researchers, scientists, and medical professionals to quickly and effectively view the distribution of h-fields from MRI brain scans.

  14. Structure, site-specific magnetism, and magnetotransport properties of epitaxial D 022 -structure Mn2FexGa thin films

    Science.gov (United States)

    Betto, Davide; Lau, Yong-Chang; Borisov, Kiril; Kummer, Kurt; Brookes, N. B.; Stamenov, Plamen; Coey, J. M. D.; Rode, Karsten

    2017-07-01

    Ferrimagnetic Mn2FexGa (0.26 ≤x ≤1.12 ) thin films have been characterized by x-ray diffraction, magnetometry, x-ray absorption spectroscopy, x-ray magnetic circular dichroism, and Mössbauer spectroscopy with the aim of determining the structure and site-specific magnetism of this tetragonal, D 022 -structure Heusler compound. High-quality epitaxial films with low root-mean-square surface roughness (˜0.6 nm) are grown by magnetron cosputtering. The tetragonal distortion induces strong perpendicular magnetic anisotropy along the c axis with a typical coercive field μ0H ˜0.8 T and an anisotropy field ranging from 6 to 8 T. On increasing the Fe content x , substantial uniaxial anisotropy, Ku≥1.0 MJm -3 , can be maintained over the full x range, while the magnetization of the compound is reduced from 400 to 280 kAm -1 . The total magnetization is almost entirely given by the sum of the spin moments originating from the ferrimagnetic Mn and Fe sublattices, with the latter being coupled ferromagnetically to one of the former. The orbital magnetic moments are practically quenched and have negligible contributions to the magnetization. The films with x =0.73 exhibit an anomalous Hall angle of 2.5 % and a Fermi-level spin polarization above 51 % , as measured by point contact Andreev reflection. The Fe-substituted Mn2Ga films are tunable with a unique combination of high anisotropy, low magnetization, appreciable spin polarization, and low surface roughness, making them strong candidates for thermally stable spin-transfer-torque switching nanomagnets with lateral dimensions down to 10 nm.

  15. A smart fully integrated micromachined separator with soft magnetic micro-pillar arrays for cell isolation

    Science.gov (United States)

    Dong, Tao; Su, Qianhua; Yang, Zhaochu; Zhang, Yulong; Egeland, Eirik B.; Gu, Dan D.; Calabrese, Paolo; Kapiris, Matteo J.; Karlsen, Frank; Minh, Nhut T.; Wang, K.; Jakobsen, Henrik

    2010-11-01

    A smart fully integrated micromachined separator with soft magnetic micro-pillar arrays has been developed and demonstrated, which can merely employ one independent lab-on-chip to realize cell isolation. The simulation, design, microfabrication and test for the new electromagnetic micro separator were executed. The simulation results of the electromagnetic field in the separator show that special soft magnetic micro-pillar arrays can amplify and redistribute the electromagnetic field generated by the micro-coils. The separator can be equipped with a strong magnetic field to isolate the target cells with a considerably low input current. The micro separator was fabricated by micro-processing technology. An electroplating bath was hired to deposit NiCo/NiFe to fabricate the micro-pillar arrays. An experimental system was set up to verify the function of the micro separator by isolating the lymphocytes, in which the human whole blood mixed with Dynabeads® FlowComp Flexi and monoclonal antibody MHCD2704 was used as the sample. The results show that the electromagnetic micro separator with an extremely low input current can recognize and capture the target lymphocytes with a high efficiency, the separation ratio reaching more than 90% at a lower flow rate. For the electromagnetic micro separator, there is no external magnetizing field required, and there is no extra cooling system because there is less Joule heat generated due to the lower current. The magnetic separator is totally reusable, and it can be used to separate cells or proteins with common antigens.

  16. Structural and magnetic anisotropy in the epitaxial FeV2O4 (110 spinel thin films

    Directory of Open Access Journals (Sweden)

    Xiaolan Shi

    2015-11-01

    Full Text Available The epitaxial 200-nm-thick FeV2O4(110 films on (110-oriented SrTiO3, LaAlO3 and MgAl2O4 substrates were fabricated for the first time by pulsed laser deposition, and the structural, magnetic, and magnetoresistance anisotropy were investigated systematically. All the films are monoclinic, whereas its bulk is cubic. Compared to FeV2O4 single crystals, films on SrTiO3 and MgAl2O4 are strongly compressively strained in [001] direction, while slightly tensily strained along normal [110] and in-plane [ 1 1 ¯ 0 ] directions. In contrast, films on LaAlO3 are only slightly distorted from cubic. The magnetic hard axis is in direction, while the easier axis is along normal [110] direction for films on SrTiO3 and MgAl2O4, and in-plane [ 1 1 ¯ 0 ] direction for films on LaAlO3. Magnetoresistance anisotropy follows the magnetization. The magnetic anisotropy is dominated by the magnetocrystalline energy, and tuned by the magneto-elastic coupling.

  17. X-ray magnetic circular dichroism study of epitaxial magnetite ultrathin film on MgO(100)

    Energy Technology Data Exchange (ETDEWEB)

    Liu, W. Q.; Xu, Y. B., E-mail: yongbing.xu@york.ac.uk, E-mail: rzhang@nju.edu.cn [York-Nanjing International Center for Spintronics (YNICS), School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 (China); Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO10 5DD (United Kingdom); Song, M. Y.; Lin, J. G. [Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan (China); Maltby, N. J.; Li, S. P. [Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO10 5DD (United Kingdom); Samant, M. G.; Parkin, S. S. P. [IBM Research Division, Almaden Research Center, San Jose, California 95120 (United States); Bencok, P.; Steadman, Paul; Dobrynin, Alexey [Diamond Light Source, Didcot OX11 0DE (United Kingdom); Zhang, R., E-mail: yongbing.xu@york.ac.uk, E-mail: rzhang@nju.edu.cn [York-Nanjing International Center for Spintronics (YNICS), School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2015-05-07

    The spin and orbital magnetic moments of the Fe{sub 3}O{sub 4} epitaxial ultrathin film synthesized by plasma assisted simultaneous oxidization on MgO(100) have been studied with X-ray magnetic circular dichroism. The ultrathin film retains a rather large total magnetic moment, i.e., (2.73 ± 0.15) μ{sub B}/f.u., which is ∼70% of that for the bulk-like Fe{sub 3}O{sub 4}. A significant unquenched orbital moment up to 0.54 ± 0.05 μ{sub B}/f.u. was observed, which could come from the symmetry breaking at the Fe{sub 3}O{sub 4}/MgO interface. Such sizable orbital moment will add capacities to the Fe{sub 3}O{sub 4}-based spintronics devices in the magnetization reversal by the electric field.

  18. Structural and magnetic anisotropy in the epitaxial FeV2O4 (110) spinel thin films

    Science.gov (United States)

    Shi, Xiaolan; Wang, Yuhang; Zhao, Kehan; Liu, Na; Sun, Gaofeng; Zhang, Liuwan

    2015-11-01

    The epitaxial 200-nm-thick FeV2O4(110) films on (110)-oriented SrTiO3, LaAlO3 and MgAl2O4 substrates were fabricated for the first time by pulsed laser deposition, and the structural, magnetic, and magnetoresistance anisotropy were investigated systematically. All the films are monoclinic, whereas its bulk is cubic. Compared to FeV2O4 single crystals, films on SrTiO3 and MgAl2O4 are strongly compressively strained in [001] direction, while slightly tensily strained along normal [110] and in-plane [ 1 1 ¯ 0 ] directions. In contrast, films on LaAlO3 are only slightly distorted from cubic. The magnetic hard axis is in direction, while the easier axis is along normal [110] direction for films on SrTiO3 and MgAl2O4, and in-plane [ 1 1 ¯ 0 ] direction for films on LaAlO3. Magnetoresistance anisotropy follows the magnetization. The magnetic anisotropy is dominated by the magnetocrystalline energy, and tuned by the magneto-elastic coupling.

  19. Cobalt epitaxial nanoparticles on CaF2/Si(111): Growth process, morphology, crystal structure, and magnetic properties

    Science.gov (United States)

    Sokolov, N. S.; Suturin, S. M.; Krichevtsov, B. B.; Dubrovskii, V. G.; Gastev, S. V.; Sibirev, N. V.; Baranov, D. A.; Fedorov, V. V.; Sitnikova, A. A.; Nashchekin, A. V.; Sakharov, V. I.; Serenkov, I. T.; Shimada, T.; Yanase, T.; Tabuchi, M.

    2013-03-01

    We study molecular beam epitaxy growth, morphology, crystal structure, and magnetic properties of Co nanoislands on CaF2/Si(111) surface. In order to have a full appreciation of complex growth kinetics at different stages, a comprehensive study of Co growth on CaF2 is carried out by atomic force, scanning electron, and transmission electron microscopies in the direct space, as well as by x-ray and electron diffraction in the reciprocal space. These experimental data are complemented by theoretical modeling. Magnetic properties are characterized by magneto-optical Kerr effect and superconducting quantum interference device magnetometries. Key effects influencing the Co growth on fluorite are addressed, including the sticking probability, the preferential nucleation sites, the size and shape time evolution, the dependence of Co morphology on temperature and Co exposure, and the coalescence mechanism. The two-stage deposition technique is developed, whereby the low-temperature seeding stage is used to facilitate Co nucleation, and the follow-up high-temperature deposition yields Co particles with high crystalline quality. Our results enable precise control over the resulting morphology, spatial ordering, and crystal structure affecting the magnetic properties. In particular, it is demonstrated that the transformation from dense to isolated Co nanoparticles leads to the change of the in-plane and out-of-plane magnetic anisotropy and also the sign of polar and longitudinal magneto-optical Kerr effects.

  20. Reactively sputtered epitaxial γ′-Fe4N films: Surface morphology, microstructure, magnetic and electrical transport properties

    KAUST Repository

    Mi, Wenbo

    2013-10-01

    Epitaxial γ′-Fe4N films with (1 0 0) and (1 1 0) orientations have been fabricated by reactive sputtering; these films were characterized by X-ray θ-2θ and φ scans, pole figures and high-resolution transmission electron microscopy. The film surface is very smooth as the film is less than 58 nm thick. The films exhibit soft ferromagnetism, and the saturation magnetization decreases with an increase in temperature, following Bloch\\'s spin wave theory. The films also exhibit a metallic conductance mechanism. Below 30 K, magnetoresistance (MR) is positive and increases linearly with the applied field in the high-field range. In the low-field range, MR increases abruptly. Above 30 K, MR is negative, and its value increases linearly with the applied field.

  1. Selectable spontaneous polarization direction and magnetic anisotropy in BiFeO3-CoFe2O4 epitaxial nanostructures.

    Science.gov (United States)

    Dix, Nico; Muralidharan, Rajaram; Rebled, Jose-Manuel; Estradé, Sonia; Peiró, Francesca; Varela, Manuel; Fontcuberta, Josep; Sánchez, Florencio

    2010-08-24

    We demonstrate that epitaxial strain engineering is an efficient method to manipulate the ferromagnetic and ferroelectric properties in BiFeO(3)-CoFe(2)O(4) columnar nanocomposites. On one hand, the magnetic anisotropy of CoFe(2)O(4) is totally tunable from parallel to perpendicular controlling the CoFe(2)O(4) strain with proper combinations of substrate and ferroelectric phase. On the other hand, the selection of the used substrate allows the growth of the rhombohedral bulk phase of BiFeO(3) or the metastable nearly tetragonal one, which implies a rotation of the ferroelectric polar axis from [111] to close to the [001] direction. Remarkably, epitaxy is preserved and interfaces are semicoherent even when lattice mismatch is above 10%. The broad range of sustainable mismatch suggests new opportunities to assemble epitaxial nanostructures combining highly dissimilar materials with distinct functionalities.

  2. Analysis of a fully packed loop model arising in a magnetic Coulomb phase.

    Science.gov (United States)

    Jaubert, L D C; Haque, M; Moessner, R

    2011-10-21

    The Coulomb phase of spin ice, and indeed the I(c) phase of water ice, naturally realize a fully packed two-color loop model in 3D. We present a detailed analysis of the statistics of these loops: we find loops spanning the system multiple times hosting a finite fraction of all sites while the average loop length remains finite. We contrast the behavior with an analogous 2D model. We connect this body of results to properties of polymers, percolation and insights from Schramm-Loewner evolution processes. We also study another extended degree of freedom, called worms, which appear as "Dirac strings" in spin ice. We discuss implications of these results for the efficiency of numerical cluster algorithms, and address implications for the ordering properties of a broader class of magnetic systems, e.g., with Heisenberg spins, such as CsNiCrF(6) or ZnCr(2)O(4). © 2011 American Physical Society

  3. Magnetic surface domain imaging of uncapped epitaxial FeRh(001 thin films across the temperature-induced metamagnetic transition

    Directory of Open Access Journals (Sweden)

    Xianzhong Zhou

    2016-01-01

    Full Text Available The surface magnetic domain structure of uncapped epitaxial FeRh/MgO(001 thin films was imaged by in-situ scanning electron microscopy with polarization analysis (SEMPA at various temperatures between 122 and 450 K. This temperature range covers the temperature-driven antiferromagnetic-to-ferromagnetic phase transition in the body of the films that was observed in-situ by means of the more depth-sensitive magneto-optical Kerr effect. The SEMPA images confirm that the interfacial ferromagnetism coexisting with the antiferromagnetic phase inside the film is an intrinsic property of the FeRh(001 surface. Furthermore, the SEMPA data display a reduction of the in-plane magnetization occuring well above the phase transition temperature which, thus, is not related to the volume expansion at the phase transition. This observation is interpreted as a spin reorientation of the surface magnetization for which we propose a possible mechanism based on temperature-dependent tetragonal distortion due to different thermal expansion coefficients of MgO and FeRh.

  4. Fully developed pipe and triangular channel flow measurement using Magnetic Resonance Velocimetry

    Science.gov (United States)

    Baek, Seungchan; Hwang, Wontae

    2017-11-01

    Magnetic resonance velocimetry (MRV) is a non-intrusive flow visualization method which is able to measure the 3 dimensional 3 component (3D3C) mean velocity field in complex geometries, using a healthcare MRI scanner. Since this technique is based on nuclear magnetic resonance (NMR), it is free from optical distortion and does not require tracer particles. Due to these powerful advantages, MRV usage is gradually expanding from biomedical fields to the engineering domain. In this study, we validate the performance of MRV by measuring fully developed pipe flow and compare measured data with time averaged DNS data. We then investigate the overall flow characteristics in a triangular channel with a sharp corner. At the sharp corner, boundary layer effects dominate and the effect of turbulence is reduced. This information has implications for engineering applications such as flow in a turbine blade internal cooling passage at the sharp trailing edge. This research was supported by the Seoul National University Research Grant in 2017, and Doosan Heavy Industries & Construction. (Contract No. 2016900298 and 2017900095).

  5. Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2008-01-01

    Co(0 0 0 1) hcp /Fe(1 1 0) bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO 3 (1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0) bcc soft magnetic layer grew epitaxially on SrTiO 3 (1 1 1) substrate with two type variants, Nishiyama-Wasserman and Kurdjumov-Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1) hcp interlayer, while hcp-Co layer formed on Au(1 1 1) fcc or Ag(1 1 1) fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application

  6. Antidot density dependence of magnetization reversal dynamics in ultrathin epitaxial Fe/GaAs(001)

    International Nuclear Information System (INIS)

    Moore, T A; Wastlbauer, G; Bland, J A C; Cambril, E; Natali, M; Decanini, D; Chen, Y

    2004-01-01

    Easy axis dynamic magneto-optic Kerr effect loops have been measured from ultrathin (2 nm) epitaxial Fe/GaAs(001) films patterned with arrays of 1 μm square antidots of different densities (antidot spacings 10-50 μm). The applied field was sinusoidal with frequency f = 0.01 Hz-2.3 kHz. A study of dynamic coercivity H c * as a function of f reveals an intermediate dynamic regime (20 Hz c * that is suppressed at high antidot density. The dip is attributed to timescale matching of the sweeping applied field with the domain wall propagation in the film. Suppression of the dip is explained by an increase of domain nucleation in the higher antidot density films in the intermediate dynamic regime. (letter to the editor)

  7. Microstructure and Magnetic Properties of Fe and Fe-alloy Thin Films Epitaxially Grown on MgO(100) Substrates

    International Nuclear Information System (INIS)

    Matsubara, Katsuki; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2011-01-01

    Fe, Fe 50 Co 50 , and Fe 80 Ni 20 (at. %) single-crystal films with the (100) bcc plane parallel to the substrate surface were prepared on MgO(100) single-crystals heated at 300 0 C by ultra high vacuum molecular beam epitaxy. The film growth mechanism, the film structure, and the magnetic properties were investigated. In-situ reflection high energy electron diffraction and X-ray diffraction analyses indicate that the strains in the films are very small though there are fairly large mismatches of -3.7∼-4.3% at the film/substrate interface. Cross-sectional high-resolution transmission electron microscopy shows that misfit dislocations are introduced in the film at the interface. Dislocations are also observed in the film up to around 10∼20 nm distance from the interface. The presence of such dislocation relieves the strain caused by the lattice mismatch. The in-plane magnetization properties of these films reflect the magnetocrystalline anisotropies of respective bulk Fe, Fe 50 Co 50 , and Fe 80 Ni 20 crystals.

  8. Structural characterization and magnetic properties of L10-MnAl films grown on different underlayers by molecular beam epitaxy

    Science.gov (United States)

    Takata, Fumiya; Gushi, Toshiki; Anzai, Akihito; Toko, Kaoru; Suemasu, Takashi

    2018-03-01

    We grow MnAl films on different underlayers by molecular beam epitaxy (MBE), and investigate their structural and magnetic properties. L10-ordered MnAl films were successfully grown both on an MgO(0 0 1) single-crystalline substrate and on an Mn4N(0 0 1) buffer layer formed on MgO(0 0 1) and SrTiO3(0 0 1) substrates. For the MgO substrate, post rapid thermal annealing (RTA) drastically improved the crystalline quality and the degree of L10-ordering, whereas no improvement in the crystallinity was achieved by altering the substrate temperature (TS) during MBE growth. However, high-quality L10-MnAl films were formed on the Mn4N buffer layer by simply varying TS. Structural analysis using X-ray diffraction showed MnAl on an MgO substrate had a cubic structure whereas MnAl on the Mn4N buffer had a tetragonal structure. This difference in crystal structure affected the magnetic properties of the MnAl films. The uniaxial magnetic anisotropy constant (Ku) was drastically improved by inserting an Mn4N buffer layer. We achieved a perpendicular magnetic anisotropy of Ku = 5.0 ± 0.7 Merg/cm3 for MnAl/Mn4N film on MgO and 6.0 ± 0.2 Merg/cm3 on STO. These results suggest that Mn4N has potential as an underlayer for L10-MnAl.

  9. Development of Automotive Permanent Magnet Alternator with Fully Controlled AC/DC Converter

    Directory of Open Access Journals (Sweden)

    Tareq S. El-Hasan

    2018-01-01

    Full Text Available This paper proposes the design of a three-phase axial flux permanent magnet alternator (AFPMA that is characterized with an air-cored stator and two-rotor (ACSTR configuration. The AFPMA is harnessed with fully controlled AC/DC converter using six bridge Insulated Gate Bipolar Transistor (IGBTs capable to deliver a constant DC output power as an attempt to replace the Lundell alternator for automotive applications. First, the design methodology and analysis of the AFPMA is introduced. The most effective parameters, such as rotor diameter, magnet thickness, number of turns, and winding thickness are determined. A smart digital control which facilitates the comparison between the magnitudes of the three-phase input signals instead of finding the zero crossing points is developed. Moreover, custom design comparators are specially designed and developed to generate adaptive signals that are fed into an Arduino Uno microcontroller. Accordingly, the Arduino generates the timely precise pulses that are necessary to maintain the appropriate triggering of the IGBTs. This technique allows the IGBTs to conduct in an adaptive manner to overcome the problem of asymmetrical voltage outputs from the AFPM alternator. The system is also capable of handling the variation in the speed of the AFPMA via the rigor code in Arduino that detects the change in the supply frequency and voltages in a real time process. The system is first analyzed via simulations using MATLAB/Simulink and then experimentally validated at certain speed and loading conditions. The preliminary tests results indicate that such system is capable to provide an efficient solution to satisfy automotive electric power demands.

  10. Finite-size effects in the nuclear magnetic resonance of epitaxial palladium thin films

    Science.gov (United States)

    MacFarlane, W. A.; Parolin, T. J.; Larkin, T. I.; Richter, G.; Chow, K. H.; Hossain, M. D.; Kiefl, R. F.; Levy, C. D. P.; Morris, G. D.; Ofer, O.; Pearson, M. R.; Saadaoui, H.; Song, Q.; Wang, D.

    2013-10-01

    We have measured the NMR of 8Li+ implanted in a set of thin epitaxial films of Pd. We find a large, negative, strongly temperature-dependent Knight shift K consistent with previous measurements on polycrystalline films. The temperature dependence of the shift exhibits a characteristic deviation from the susceptibility χ(T). In particular, at low temperature, K(T) continues to follow a simple Curie-Weiss dependence. This result provides important insight into the origin of the low-temperature behavior of χ(T) in strongly paramagnetic metals. In addition, we find the room temperature shift depends on film thickness, with changes on the order of 20% between films 100 nm and 30 nm thick. We also observe a surface-related resonance in both Au-capped and uncapped films with a small positive shift. These features bear a striking similarity to the Pt NMR line shapes in much smaller Pt particles. However, they seem to originate, not from adsorbed species, but rather in confinement effects on the highly exhange-enhanced Pd d band.

  11. Formation of uniform magnetic structures and epitaxial hydride phases in Nd/Pr superlattices

    DEFF Research Database (Denmark)

    Goff, J.P.; Bryn-Jacobsen, C.; McMorrow, D.F.

    1997-01-01

    , and that the stacking sequence is coherent over many bilayer repeats. The neutron measurements show that for the hexagonal sites of the dhcp structure, the Nd magnetic order propagates coherently through the Pr, whereas the order on the cubic sites is either suppressed or confined to single Nd blocks. It is also shown...... that the singlet ground state of Pr is perturbed to produce a local moment on the hexagonal sites, so that in some cases there is a uniform magnetic structure throughout the superlattice. These results cast new light on the theory of magnetic interactions in rare-earth superlattices. Within a few months of growth...

  12. Fully kinetic simulations of magnetic reconnction in semi-collisional plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Daughton, William S [Los Alamos National Laboratory; Roytershteyn, Vadim S [Los Alamos National Laboratory; Albright, Brian J [Los Alamos National Laboratory; Yin, Lin [Los Alamos National Laboratory; Bowers, Kevin J [Los Alamos National Laboratory; Karimabadi, Homa [UCSD

    2009-01-01

    The influence of Coulomb collisions on the dynamics of magnetic reconnection is examined using fully kinetic simulations with a Monte-Carlo treatment of the Fokker-Planck collision operator. This powerful first-principles approach offers a bridge between kinetic and fluid regimes, which may prove useful for understanding the applicability of various fluid models. In order to lay the necessary groundwork, the collision algorithm is first carefully bench marked for a homogeneous plasma against theoretical predictions for beam-plasma interactions and electrical resistivity. Next, the collisional decay of a current layer is examined as a function of guide field, allowing direct comparisons with transport theory for the parallel and perpendicular resistivity as well as the thermoelectric force. Finally, the transition between collisional and collision less reconnection is examined in neutral sheet geometry. For modest Lundquist numbers S {approx}< 1000, a distinct transition is observed when the thickness of the Sweet-Parker layers falls below the ion inertia length {delta}{sub sp} {approx}< d,. At higher Lundquist number, deviations from the Sweet-Parker scaling are observed due to the growth of plasmoids (secondary-islands) within the elongated resistive layer. In certain cases, this instability leads to the onset of fast reconnection sooner than expected from {delta}{sub sp} {approx} d, condition. After the transition to fast reconnection, elongated electron current layers are formed which are unstable to the formation of new plasmoids. The structure and time-dependence of the electron diffusion region in these semi-collisional regimes is profoundly different than reported in two-fluid simulations.

  13. The polarized neutron reflectivity and X-ray reflectivity studies of the magnetic profiles of epitaxial Ni80Fe20/Ru multilayers

    International Nuclear Information System (INIS)

    Su, H.-C.; Peir, J.-J.; Lee, C.-H.; Lin, M.-Z.; Wu, P.-T.; Huang, J.C.A.; Tun Zin

    2005-01-01

    The depth profiles of the epitaxial Ni 80 Fe 20 (1 1 1)/Ru(0 0 0 1) multilayers were studied by polarized neutron reflectivity and X-ray reflectivity. At the Ru thickness that the anti-ferromagnetic coupling was found, the magnetic moments between two Ni 80 Fe 20 interlayers show a biquadratic coupling effect with a double unit cell at low applied fields. A magnetic dead layer of about 0.3 nm was also found at the interface boundaries. The maximal polarization effect applied to the Ru layer is less than 0.03μ B

  14. Magnetic properties of Fe0.4Mn0.6/Co2FeAl bilayers grown on GaAs by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Meng, K. K.; Nie, S. H.; Yu, X. Z.; Wang, S. L.; Zhao, J. H.; Yan, W. S.

    2011-01-01

    Polycrystalline Fe 0.4 Mn 0.6 layers with the different thickness are deposited on 4-nm-thick single-crystalline Co 2 FeAl layers, which are grown on GaAs (001) substrates at room temperature by molecular-beam epitaxy. Both the exchange bias and the in-plane magnetic anisotropies of the bilayers are strongly dependent on the thickness of the Fe 0.4 Mn 0.6 layer. The former is described using a granular level model. A modified Stoner-Wohlfarth model is used to explain the in-plane magnetic anisotropies observed at 5 K, while one possible reason for the magnetic anisotropies measured at 300 K is the complex interfacial magnetic properties proved by x-ray magnetic circular dichroism measurements.

  15. Growth, luminescence and magnetic properties of GaN:Er semiconductor thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Dasari, K.; Wu, J.; Huhtinen, H.; Jadwisienczak, W. M.; Palai, R.

    2017-05-01

    We report on the growth, surface, luminescence and magnetic properties of 180 nm thick Er-doped GaN thin films grown by molecular beam epitaxy (MBE) on c-sapphire substrates with no buffer layer and with different Er concentrations. In situ reflection high-energy electron diffraction (RHEED) patterns revealed crystalline and uniform growth of the films. The x-ray diffraction (XRD) pattern showed c-axis-oriented growth. Atomic force microscopy (AFM) analysis showed enhancement of surface morphology and smoothness with increasing Er doping, which could be due to minimization of surface defects because of the gettering effect of the rare earth. Scanning area-dependent surface morphology analysis showed a power law dependence indicating the fractal nature of the surface, which is confirmed by the observation of a non-integer D (fractal dimension) value. X-ray photoluminescence spectroscopy (XPS) revealed the formation of a GaN:Er phase and ruled out the presence of Ga and Er metallic and native oxide phases. The semi-quantitative elemental composition of the films was determined using N 1s, Ga 2p3/2 and Er 4d photoemission lines. The Er concentration was estimated from the x-ray photoelectron spectra and found to be between 3.0 and 9.0 at.% (˜1021 atoms cm-3). Photoluminescence (PL) and cathodoluminescence (CL) studies showed visible emission and concentration quenching of Er3+ ions in agreement with reported results. Excitation of the Er3+ ion might be affected by charge trapping due to Er-doping-induced defect complexes. The magnetic measurements carried out by a superconducting quantum interference device (SQUID) showed a ferromagnetic-paramagnetic phase transition at low temperature, contrary to the reported room temperature ferromagnetism in metalorganic chemical vapor deposition (MOCVD)-grown GaN:Er thick films of 550 nm.

  16. Planar Hall effect and magnetic anisotropy in epitaxially strained chromium dioxide thin films

    NARCIS (Netherlands)

    Goennenwein, S.T.B.; Keizer, R.S.; Schink, S.W.; Van Dijk, I.; Klapwijk, T.M.; Miao, G.X.; Xiao, G.; Gupta, A.

    2007-01-01

    We have measured the in-plane anisotropic magnetoresistance of 100?nm thick CrO2 thin films at liquid He temperatures. In low magnetic fields H, both the longitudinal and the transverse (planar Hall) resistance show abrupt switches, which characteristically depend on the orientation of H. All the

  17. Magnetic domain configuration of (111-oriented LaFeO3 epitaxial thin films

    Directory of Open Access Journals (Sweden)

    I. Hallsteinsen

    2017-08-01

    Full Text Available In antiferromagnetic spintronics control of the domains and corresponding spin axis orientation is crucial for devices. Here we investigate the antiferromagnetic axis in (111-oriented LaFeO3/SrTiO3, which is coupled to structural twin domains. The structural domains have either the orthorhombic a- or b-axis along the in-plane ⟨11¯0⟩ cubic directions of the substrate, and the corresponding magnetic domains have the antiferromagnetic axis in the sample plane. Six degenerate antiferromagnetic axes are found corresponding to the ⟨11¯0⟩ and ⟨112¯⟩ in-plane directions. This is in contrast to the biaxial anisotropy in (001-oriented films and reflects how crystal orientation can be used to control magnetic anisotropy in antiferromagnets.

  18. Determination of the Fe magnetic anisotropies and the CoO frozen spins in epitaxial CoO/Fe/Ag(001)

    Energy Technology Data Exchange (ETDEWEB)

    Meng, J. Li, Y.; Park, J. S.; Jenkins, C. A.; Arenholz, E.; Scholl, A.; Tan, A.; Son, H.; Zhao, H. W.; Hwang, Chanyong; Qiu, Z. Q.

    2011-04-28

    CoO/Fe/Ag(001) films were grown epitaxially and studied by X-ray Magnetic Circular Dichroism (XMCD) and X-ray Magnetic Linear Dichroism (XMLD). After field cooling along the Fe[100] axis to 80 K, exchange bias, uniaxial anisotropy, and 4-fold anisotropy of the films were determined by hysteresis loop and XMCD measurements by rotating the Fe magnetization within the film plane. The CoO frozen spins were determined by XMLD measurement as a function of CoO thickness.We find that among the exchange bias, uniaxial anisotropy, and 4-fold anisotropy, only the uniaxial magnetic anisotropy follows thickness dependence of the CoO frozen spins.

  19. Structure and magnetism of nanocrystalline and epitaxial (Mn,Zn,Fe)3O4 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Alaan, U. S. [Univ. of California, Berkeley, CA (United States); Wong, F. J. [Univ. of California, Berkeley, CA (United States); Grutter, A. J. [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Iwata-Harms, J. M. [Univ. of California, Berkeley, CA (United States); Mehta, V. V. [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Arenholz, E. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Suzuki, Y. [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2012-02-21

    We study nanocrystalline (NC) textured Mn0.5Zn0.6Fe1.9O4 (MZFO) films, grown at room temperature on both isostructural and non-isostructural substrates, that show magnetization values significantly suppressed from epitaxial MZFO films. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate larger ratios of Fe3+ to Fe2+ ions on the tetrahedral sites in the NC films compared to the epitaxialfilms. The magnetization loops of the NC films are shifted by 200-400 Oe at low temperatures. No such effect is observed in the epitaxialfilms. In conclusion, we hypothesize that the presence of a more structurally disordered, possibly magnetically frustrated, matrix exchange biases the crystalline regions.

  20. Micro-patterning of resin-bonded NdFeB magnet for a fully integrated electromagnetic actuator

    Science.gov (United States)

    Tao, Kai; Wu, Jin; Kottapalli, Ajay Giri Prakash; Chen, Di; Yang, Zhuoqing; Ding, Guifu; Lye, Sun Woh; Miao, Jianmin

    2017-12-01

    This paper reports a fully-integrated, batch-fabricated electromagnetic actuator which features micro-patterned NdFeB magnets. The entire actuator is fabricated through MEMS-compatible laminated surface micromachining technology, eliminating the requirement for further component assembly processes. The fabrication strategy allowed the entire volume of the actuator to be reduced to a small size of 2.5 × 2.5 × 2 mm3, which is one of the smallest NdFeB-based electromagnetic actuators demonstrated to date. The magnetic properties of NdFeB thin films are further investigated and optimized using different types of lithographically-defined micromolds. By altering the direction of the input current, actuating displacements of approximately ±10 μm are achieved during both the attraction and the repulsion operations. This work demonstrates the viability and compatibility of using polymer-bonded magnets for magnetic MEMS applications.

  1. Competing magnetic and spin-gapless semiconducting behavior in fully compensated ferrimagnetic CrVTiAl: Theory and experiment

    Science.gov (United States)

    Venkateswara, Y.; Gupta, Sachin; Samatham, S. Shanmukharao; Varma, Manoj Raama; Enamullah, Suresh, K. G.; Alam, Aftab

    2018-02-01

    We report the structural, magnetic, and transport properties of the polycrystalline CrVTiAl alloy along with first-principles calculations. The alloy crystallizes in a LiMgPdSn-type structure with a lattice parameter of 6.14 Å at room temperature. The absence of the (111) peak along with the presence of a weak (200) peak indicates the antisite disorder of Al with Cr and V atoms, which is different from the pure DO3 type. Magnetization measurements reveal a magnetic transition near 710 K, a coercive field of ˜100 Oe at 3 K, and a moment of ˜10-3μB/f .u . These observations are indicative of fully compensated ferrimagnetism in the alloy, which is confirmed by theoretical modeling. The temperature coefficient of resistivity is found to be negative, signaling the semiconducting nature. However, the absence of exponential dependence indicates the semiconducting nature with gapless/spin-gapless behavior. Electronic and magnetic properties of CrVTiAl for all three possible crystallographic configurations are studied theoretically. All the configurations are found to be different forms of semiconductors. The ground-state configuration is a fully compensated ferrimagnet with band gaps of 0.58 and 0.30 eV for the spin-up and -down bands, respectively. The next-higher-energy configuration is also fully compensated ferrimagnetic but has a spin-gapless semiconducting nature. The highest-energy configuration corresponds to a nonmagnetic, gapless semiconductor. The energy differences among these configurations are quite small (account the theoretical and experimental findings, we conclude that CrVTiAl is a fully compensated ferrimagnet with a predominantly spin-gapless semiconducting nature.

  2. Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoF e2O4/A l2O3/Si (111 ) films studied by x-ray magnetic circular dichroism

    Science.gov (United States)

    Wakabayashi, Yuki K.; Nonaka, Yosuke; Takeda, Yukiharu; Sakamoto, Shoya; Ikeda, Keisuke; Chi, Zhendong; Shibata, Goro; Tanaka, Arata; Saitoh, Yuji; Yamagami, Hiroshi; Tanaka, Masaaki; Fujimori, Atsushi; Nakane, Ryosho

    2017-09-01

    Epitaxial CoF e2O4/A l2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoF e2O4 . To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoF e2O4/A l2O3 interface is necessary. In this paper, we study the cation distribution, electronic structures, and the magnetic properties of CoF e2O4(111 ) layers with various thicknesses (thickness d =1.4 , 2.3, 4, and 11 nm) in the epitaxial CoF e2O4(111 ) /A l2O3(111 ) /Si (111 ) structures using soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) combined with cluster-model calculation. The magnetization of CoF e2O4 measured by XMCD gradually decreases with decreasing thickness d , and finally, a magnetically dead layer is clearly detected at d =1.4 nm . The magnetically dead layer has frustration of magnetic interactions, which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoF e2O4/A l2O3 interface originates from various complex networks of superexchange interactions through the change in the cation distribution and electronic structure. Furthermore, from comparison of the magnetic properties between d =1.4 and 2.3 nm, it is found that the ferrimagnetic order of the magnetically dead layer at the CoF e2O4/A l2O3 interface is partially restored by increasing the thickness from d =1.4 to 2.3 nm.

  3. Laser MBE-grown CoFeB epitaxial layers on MgO: Surface morphology, crystal structure, and magnetic properties

    Science.gov (United States)

    Kaveev, Andrey K.; Bursian, Viktor E.; Krichevtsov, Boris B.; Mashkov, Konstantin V.; Suturin, Sergey M.; Volkov, Mikhail P.; Tabuchi, Masao; Sokolov, Nikolai S.

    2018-01-01

    Epitaxial layers of CoFeB were grown on MgO by means of laser molecular beam epitaxy using C o40F e40B20 target. The growth was combined with in situ structural characterization by three-dimensional reciprocal space mapping obtained from reflection high energy electron diffraction (RHEED) data. High-temperature single stage growth regime was adopted to fabricate CoFeB layers. As confirmed by the atomic force microscopy, the surface of CoFeB layers consists of closely spaced nanometer sized islands with dimensions dependent on the growth temperature. As shown by RHEED and XRD analysis, the CoFeB layers grown at high-temperature on MgO(001) possess body centered cubic (bcc) crystal structure with the lattice constant a =2.87 Å close to that of the C o75F e25 alloy. It was further shown that following the same high-temperature growth technique the MgO/CoFeB/MgO(001) heterostructures can be fabricated with top and bottom MgO layers of the same crystallographic orientation. The CoFeB layers were also grown on the GaN(0001) substrates using MgO(111) as a buffer layer. In this case, the CoFeB layers crystallize in bcc crystal structure with the (111) axis perpendicular to the substrate surface. The magnetic properties of the CoFeB/MgO (001) heterostructures have been investigated by measuring magnetization curves with a vibrating sample magnetometer as well as by performing magneto-optical Kerr effect (MOKE) and ferromagnetic resonance (FMR) studies. FMR spectra were obtained for the variety of the magnetic field directions and typically consisted of a single relatively narrow resonance line. The magnetization orientations and the resonance conditions were calculated in the framework of a standard magnetic energy minimization procedure involving a single K1 c cubic term for the magnetocrystalline anisotropy. This allows a fairly accurate description of the angular dependences of the resonance fields—both in-plane and out-of-plane. It was shown that CoFeB layers exhibit

  4. Domain structure and magnetic properties of epitaxial SrRuO sub 3 films grown on SrTiO sub 3 (100) substrates by ion beam sputtering

    CERN Document Server

    Oh, S H

    2000-01-01

    The domain structure of epitaxial SrRuO sub 3 thin films grown on SrTiO sub 3 (100) substrates by using ion beam sputtering has been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). The SrRuO sub 3 films grown in the present study revealed a unique cube-on-cube epitaxial relationship, i.e., (100) sub S sub R sub O ll (100) sub S sub T sub O , [010] sub S sub R sub O ll [101] sub S sub T sub O , prevailing with a cubic single-domain structure. The cubic SrRuO sub 3 thin films that were inherently with free from RuO sub 6 octahedron tilting exhibited higher resistivity with suppressed magnetic properties. The Curie temperature of the thin films was suppressed by 60 K from 160 K for the bulk specimen, and the saturation magnetic moment was reduced by a significant amount. The tetragonal distortion of the SrRuO sub 3 thin films due to coherent growth with the substrate seemed to result in a strong magnetic anisotropy.

  5. Fully automated measurement of anisotropy of magnetic susceptibility using 3D rotator

    Czech Academy of Sciences Publication Activity Database

    Studýnka, J.; Chadima, Martin; Suza, P.

    2014-01-01

    Roč. 629, 26 August (2014), s. 6-13 ISSN 0040-1951 Institutional support: RVO:67985831 Keywords : AMS * Kappabridge * susceptibility tensor Subject RIV: DE - Earth Magnetism, Geodesy, Geography Impact factor: 2.872, year: 2014

  6. Fully Relativistic Temperature-Dependent Electronic Transport Properties of Magnetic Alloys From the First Principles.

    Czech Academy of Sciences Publication Activity Database

    Wagenknecht, David; Carva, K.; Turek, Ilja

    2017-01-01

    Roč. 53, č. 11 (2017), č. článku 1700205. ISSN 0018-9464 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68081723 Keywords : electronic transport * magnetic alloys * ab initio theory Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.243, year: 2016

  7. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers

    Science.gov (United States)

    Mao, Siwei; Lu, Jun; Zhao, Xupeng; Wang, Xiaolei; Wei, Dahai; Liu, Jian; Xia, Jianbai; Zhao, Jianhua

    2017-02-01

    Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin polarization, it is predicted to be a kind of suitable magnetic electrode candidate in the perpendicular magnetic tunnel junction (p-MTJ) for high density spin transfer torque magnetic random access memory (STT-MRAM) applications. However, p-MTJs with both bottom and top MnGa electrodes have not been achieved yet, since high quality perpendicular magnetic MnGa films can hardly be obtained on the MgO barrier due to large lattice mismatch and surface energy difference between them. Here, a MnGa-based fully p-MTJ with the structure of MnGa/Co2MnSi/MgO/Co2MnSi/MnGa is investigated. As a result, the multilayer is with high crystalline quality, and both the top and bottom MnGa electrodes show well PMA. Meanwhile, a distinct tunneling magnetoresistance (TMR) ratio of 65% at 10 K is achieved. Ultrathin Co2MnSi films are used to optimize the interface quality between MnGa and MgO barrier. A strong antiferromagnetic coupling in MnGa/Co2MnSi bilayer is confirmed with the interfacial exchange coupling constant of -5erg/cm2. This work proposes a novel p-MTJ structure for the future STT-MRAM progress.

  8. Magnetization dynamics in La{sub 0.67}Ca{sub 0.33}MnO{sub 3} epitaxial films probed with resonant and non-resonant microwave absorption

    Energy Technology Data Exchange (ETDEWEB)

    Porwal, Rajni; Pant, R. P.; Budhani, R. C., E-mail: rcb@iitk.ac.in [National Physical Laboratory, Council of Scientific and Industrial Research, Dr K S Krishnan Marg, New Delhi-110012 (India)

    2015-01-07

    Temperature (T) dependent microwave absorption measurements are performed on La{sub 0.67}Ca{sub 0.33}MnO{sub 3} (LCMO) epitaxial thin films of thickness 100 and 200 nm in an electron paramagnetic resonance spectrometer operating in X-band. The resonant absorption peak is monitored for out-of-plane (H{sup ⊥}) and in-plane (H{sup ∥}) dc magnetic field (H) as the system goes through magnetic ordering. These data suggest a resilient transformation to the ferromagnetic (FM) phase in the vicinity of the Curie temperature (T{sub C}), indicative of a phase separation, which is dominant in the thinner film. The saturation magnetization is calculated from SQUID magnetometry on the same film. A pronounced zero-field absorption is seen in H{sup ∥} geometry displaying anomalous growth in 100 nm film at T < T{sub C}. This feature is correlated with the magneto-conductivity of the manganite which is colossal in the vicinity of T{sub C} in the well-ordered film of thickness 200 nm. Signature of standing spin wave modes is seen in H{sup ⊥} measurements which are analyzed to calculate the spin wave stiffness constant D(T) in the limit of zero temperature. The same is also inferred from the decay of equilibrium magnetization in the framework of Bloch law. These studies reveal that a bulk like LCMO is obtained in the fully relaxed thicker films.

  9. Dielectric relaxation in epitaxial films of paraelectric-magnetic SrTiO3-SrMnO3 solid solution

    Science.gov (United States)

    Savinov, M.; Bovtun, V.; Tereshina-Chitrova, E.; Stupakov, A.; Dejneka, A.; Tyunina, M.

    2018-01-01

    Magneto-dielectric properties of (A2+)MnO3-type perovskites are attractive for applications and stimulate extensive studies of these materials. Here, the complex dielectric and magnetic responses are investigated as in epitaxial films of SrTi0.6Mn0.4O3, solid solution of paraelectric SrTiO3 and magnetic SrMnO3. The impedance and resonance measurements at frequencies of 10-2-1010 Hz and temperatures of 10-500 K reveal broad dielectric anomalies centered at 100-200 K, while the films are paramagnetic at all temperatures. Analysis shows polaronic electrical conductivity behind the observed behavior. Electron-phonon correlations, rather than spin-phonon correlations, are suggested to produce the apparent magneto-dielectric responses in many multiferroic manganites.

  10. EXPLAINING THE COEXISTENCE OF LARGE-SCALE AND SMALL-SCALE MAGNETIC FIELDS IN FULLY CONVECTIVE STARS

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Rakesh K.; Poppenhaeger, Katja; Wolk, Scott J. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Christensen, Ulrich R.; Gastine, Thomas [Max-Planck-Institut für Sonnensystemforschung, Justus-von-Liebig-Weg 3, D-37077 Göttingen (Germany); Morin, Julien [LUPM, Université de Montpellier, CNRS, Place Eugène Bataillon, F-34095 (France); Reiners, Ansgar, E-mail: rakesh.yadav@cfa.harvard.edu [Institut für Astrophysik, Universität Göttingen, Friedrich Hund Platz 1, D-37077 Göttingen (Germany)

    2015-11-10

    Despite the lack of a shear-rich tachocline region, low-mass fully convective (FC) stars are capable of generating strong magnetic fields, indicating that a dynamo mechanism fundamentally different from the solar dynamo is at work in these objects. We present a self-consistent three-dimensional model of magnetic field generation in low-mass FC stars. The model utilizes the anelastic magnetohydrodynamic equations to simulate compressible convection in a rotating sphere. A distributed dynamo working in the model spontaneously produces a dipole-dominated surface magnetic field of the observed strength. The interaction of this field with the turbulent convection in outer layers shreds it, producing small-scale fields that carry most of the magnetic flux. The Zeeman–Doppler-Imaging technique applied to synthetic spectropolarimetric data based on our model recovers most of the large-scale field. Our model simultaneously reproduces the morphology and magnitude of the large-scale field as well as the magnitude of the small-scale field observed on low-mass FC stars.

  11. Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers

    Science.gov (United States)

    Chang, H. W.; Akita, S.; Matsukura, F.; Ohno, H.

    2014-09-01

    We report molecular beam epitaxy of a ferromagnetic semiconductor (Ga,Mn)Sb, which is a single crystal without detectable second phases. We report also the details of magnetotransport properties of (Ga,Mn)Sb and the effects of electric fields on them. The difference between the properties observed here and properties of those reported earlier for a ferromagnetic semiconductor (Ga,Mn)As, provides information critical for further understanding of fundamental and device physics of ferromagnetic semiconductors.

  12. Effects of strain on the magnetic and transport properties of the epitaxial La0.5Ca0.5MnO3 thin films

    International Nuclear Information System (INIS)

    Zarifi, M.; Kameli, P.; Ehsani, M.H.; Ahmadvand, H.; Salamati, H.

    2016-01-01

    The epitaxial strain can considerably modify the physical properties of thin films compared to the bulk. This paper reports the effects of substrate-induced strain on La 0.5 Ca 0.5 MnO 3 (LCMO) thin films, grown on (100) SrTiO 3 (STO) and LaAlO 3 (LAO) substrates by pulsed laser deposition technique. Transport and magnetic properties were found to be strongly dependent on strain type. It is also shown that compressive (tensile) strain leads to the increase (decrease) in the magnetization of the films. Moreover, it was observed that all LCMO films deposited on both LAO and STO substrates behave as an insulator, but LCMO/LAO thin films with compressive strain have lower resistivity than LCMO/STO thin films with tensile strain. Applying magnetic field to LCMO/STO thin films with thickness of 25 and 50 nm leads to very small change in the resistivity, while the effects of magnetic field on the sample with thickness of 125 nm leads to an insulator–metal transition. For LCMO/LAO thin films, the magnetic field has a strong impact on the resistivity of samples. The results show that the magnetoresistance (MR) is enhanced by increasing film thickness for LCMO/LAO samples, due to the relatively stronger phase separation. For LCMO/STO thin films MR is drastically decreased by reduction of film thickness, which is attributed to the enhancement of the charge–orbital order (CO–O) accompanying the complex spin order (the so-called CE type). The changes of the antiferromagnetic structure from the CE to C type and the enhancement of the CE type could be attributed to the in-plane compressive and tensile strain, respectively. - Highlights: • Epitaxial La 0.5 Ca 0.5 MnO 3 thin films, grown on (100) SrTiO 3 and LaAlO 3 substrates. • The compressive strain leads to the increase in the magnetization of the films. • The tensile strain leads to the decrease in the magnetization of the films. • The magnetoresistance is enhanced by increasing film thickness.

  13. Epitaxial Heusler superlattice Co2MnAl /Fe2MnAl with perpendicular magnetic anisotropy and termination-dependent half-metallicity

    Science.gov (United States)

    Brown-Heft, Tobias L.; Logan, John A.; McFadden, Anthony P.; Guillemard, Charles; Le Fèvre, Patrick; Bertran, François; Andrieu, Stéphane; Palmstrøm, Chris J.

    2018-03-01

    Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co2MnAl and Fe2MnAl with one- to three-unit-cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron-energy-loss spectroscopy maps confirmed clearly segregated epitaxial Heusler layers with high cobalt or high iron concentrations for samples grown near room temperature on GaAs (001). Superlattice structures grown with an excess of aluminum had significantly lower thin-film shape anisotropy and resulted in an out-of-plane spin reorientation transition at temperatures below 200 K for samples grown on GaAs (001). Synchrotron-based spin-resolved photoemission spectroscopy found that the superlattice structure improves the Fermi-level spin polarization near the X point in the bulk Brillouin zone. Stoichiometric Co2MnAl terminated superlattice grown on MgO (001) had a spin polarization of 95%, while a pure Co2MnAl film had a spin polarization of only 65%.

  14. Application of spin-sensitive electron spectroscopies to investigations of electronic and magnetic properties of solid surfaces and epitaxial systems: Progress report, 1 January 1987-31 December 1987

    International Nuclear Information System (INIS)

    Walters, G.K.; Dunning, F.B.

    1987-08-01

    Research during the second year of this grant has focussed on: (1) investigation of surface magnetic structure of Ni(lll) by Spin-Polarized Low Energy Electron Diffraction (SPLEED) and overhaul of the apparatus to incorporate additional spin-dependent electron spectroscopies and epitaxial growth capabilities; and (2) investigation of dynamics of metastable atom deexcitation at magnetic and adsorbate-covered surfaces using Spin-Polarized Metastable Deexcitation Spectroscopy (SPMDS)

  15. Effects of strain on the magnetic and transport properties of the epitaxial La0.5Ca0.5MnO3 thin films

    Science.gov (United States)

    Zarifi, M.; Kameli, P.; Ehsani, M. H.; Ahmadvand, H.; Salamati, H.

    2016-12-01

    The epitaxial strain can considerably modify the physical properties of thin films compared to the bulk. This paper reports the effects of substrate-induced strain on La0.5Ca0.5MnO3 (LCMO) thin films, grown on (100) SrTiO3 (STO) and LaAlO3 (LAO) substrates by pulsed laser deposition technique. Transport and magnetic properties were found to be strongly dependent on strain type. It is also shown that compressive (tensile) strain leads to the increase (decrease) in the magnetization of the films. Moreover, it was observed that all LCMO films deposited on both LAO and STO substrates behave as an insulator, but LCMO/LAO thin films with compressive strain have lower resistivity than LCMO/STO thin films with tensile strain. Applying magnetic field to LCMO/STO thin films with thickness of 25 and 50 nm leads to very small change in the resistivity, while the effects of magnetic field on the sample with thickness of 125 nm leads to an insulator-metal transition. For LCMO/LAO thin films, the magnetic field has a strong impact on the resistivity of samples. The results show that the magnetoresistance (MR) is enhanced by increasing film thickness for LCMO/LAO samples, due to the relatively stronger phase separation. For LCMO/STO thin films MR is drastically decreased by reduction of film thickness, which is attributed to the enhancement of the charge-orbital order (CO-O) accompanying the complex spin order (the so-called CE type). The changes of the antiferromagnetic structure from the CE to C type and the enhancement of the CE type could be attributed to the in-plane compressive and tensile strain, respectively.

  16. Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Jumpei; Oka, Daichi [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan); Hirose, Yasushi, E-mail: hirose@chem.s.u-tokyo.ac.jp; Yang, Chang; Fukumura, Tomoteru; Hasegawa, Tetsuya [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Harayama, Isao; Sekiba, Daiichiro [University of Tsukuba Tandem Accelerator Complex (UTTAC), 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8577 (Japan)

    2015-12-07

    Synthesis of mid- to late-transition metal oxynitrides is generally difficult by conventional thermal ammonolysis because of thermal instability. In this letter, we synthesized epitaxial thin films of AX-type phase-pure cobalt oxynitrides (CoO{sub x}N{sub y}) by using nitrogen-plasma-assisted pulsed laser deposition and investigated their structural, electrical, and magnetic properties. The CoO{sub x}N{sub y} thin films with 0 ≤ y/(x + y) ≤ 0.63 grown on MgO (100) substrates showed a structural phase transition from rock salt (RS) to zinc blend at the nitrogen content y/(x + y) ∼ 0.5. As the nitrogen content increased, the room-temperature electrical resistivity of the CoO{sub x}N{sub y} thin films monotonically decreased from the order of 10{sup 5} Ω cm to 10{sup −4} Ω cm. Furthermore, we observed an insulator-to-metal transition at y/(x + y) ∼ 0.34 in the RS-CoO{sub x}N{sub y} phase, which has not yet been reported in Co{sup 2+}/Co{sup 3+} mixed-valence cobalt oxides with octahedral coordination. The low resistivity in the RS-CoO{sub x}N{sub y} phase, on the 10{sup −3} Ω cm order, may have originated from the intermediate spin state of Co{sup 3+} stabilized by the lowered crystal field symmetry of the CoO{sub 6−n}N{sub n} octahedra (n = 1, 2,…5). Magnetization measurements suggested that a magnetic phase transition occurred in the RS-CoO{sub x}N{sub y} films during the insulator-to-metal transition. These results demonstrate that low-temperature epitaxial growth is a promising approach for exploring novel electronic functionalities in oxynitrides.

  17. The structures, stabilities, electronic and magnetic properties of fully and partially hydrogenated germanene nanoribbons: A first-principles investigation

    Science.gov (United States)

    Liu, Jingwei; Yu, Guangtao; Shen, Xiaopeng; Zhang, Hui; Li, Hui; Huang, Xuri; Chen, Wei

    2017-03-01

    Based on the first-principles DFT computations, we systematically investigated the geometries, stabilities, electronic and magnetic properties of fully and partially hydrogenated Ge nanoribbons (fH-GeNRs and pH-GeNRs) with the zigzag and armchair edges. It is revealed that the chair-like configuration is the lowest-lying one for zigzag/armchair-edged fH-GeNRs. Regardless of the edge chirality, the full hydrogenation can effectively widen the band gap of GeNR, and endow fH-GeNRs with the nonmagnetic (NM) semiconducting behaviors, where the band gap decreases with the increase of ribbon width. Comparatively, independent of hydrogenation ratio, all the pH-GeNRs with zigzag edge are the antiferromagnetic semiconductors while all the pH-GeNRs with armchair edge are NM semiconductors. When increasing the hydrogenation ratio, the band gap of pH-GeNRs can increase, but the variation of band gap can exhibit the intriguing three family behavior for the armchair-edged pH-GeNRs. Especially, all these pH-GeNRs can exhibit the almost same electronic and magnetic properties as the remaining pristine GeNRs without hydrogenation. This may offer a potential strategy to realize the "narrow" GeNRs in large scale. Finally, all these hydrogenated GeNRs can possess high structure stability, indicating a great possibility of their experimental realization. These valuable insights can be advantageous for promoting the Ge-based nanomaterials in the application of multifunctional nanodevice.

  18. First Observation of Switch-Off Slow Shocks in Fully Kinetic Particle in Cell Simulation of Magnetic Reconnection

    Science.gov (United States)

    Lapenta, G.; Sanna, L.; Goldman, M. V.; Newman, D. L.; Markidis, S.

    2014-12-01

    A perduring challenge in the study of reconnection it has long been the failing attempts to reconcile the large scale MHD view based on the Petschek model with the small scale view based on kinetic theory. The first is based on the existence of standing switch off slow shocks (SSS) that eliminate the horizontal (the x component in the usual GSM coordinates) reconnecting magnetic field component forming vertical magnetic field lines. The second is based on nested diffusion regions where the magnetic field lines become decoupled first from ions and then from electrons. The kinetic picture when observed superficially does seem to have seem resemblance to the Petschek topology, despite the nested boxes being more of a Sweet-Parker concept. Nevertheless, the question has always been: if expanded to sufficiently large scales, does the kinetic description eventually lead tot the formation os SSS? The question remains answered. Recently a first negative answer has been proposed in Ref. [1]. The proposed answer is in essence that SSS are made impossible by the presence of a firehose instability in the reconnection exhaust and by the formation of a plateau in the firehose parameter at a value of 0.25 corresponding to the condition where nonlinear slow and intermediate wave become degenerate. We report a new series of simulations where we demonstrate that this is not the case in general. While for the specific case used in Ref [1], we indeed re-obtain the same conclusions reached by the authors. But our study demonstrates that case to be very peculiar and not representative of the more general kinetic answer. We will report direct evidence of the presence of extended SSS (over regions of hundreds of ion inertial lengths) in fully kinetic simulations for parameters typical of the magntotail and of the solar wind. Our results indicate that SSS are the natural extension of kinetic reconnection to large scales. The simulations required for the study are heroic and were conducted

  19. EDITORIAL: Epitaxial graphene Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

  20. Multifunctional epitaxial systems on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Physics, The University of Texas at El Paso, El Paso, Texas 79968 (United States); Prater, John Thomas [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2016-09-15

    Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin

  1. Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films

    KAUST Repository

    Duan, Xiaofei

    2012-05-01

    Reactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  2. Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (0 0 1) films

    International Nuclear Information System (INIS)

    Pechan, Michael J.; Yu, Chengtao; Carr, David; Palmstroem, Chris J.

    2005-01-01

    Remarkably large, strain-induced anisotropy is observed in the thin-film Heusler alloy Co 2 MnGa. 30 nm Co 2 MnGa (0 0 1) films have been epitaxially grown on different interlayers/substrates with varied strain, and investigated with ferromagnetic resonance. The film grown on ErAs/InGaAs/InP experiences tension strain, resulting in an out-of-plane strain-induced anisotropy (∼1.1x10 6 erg/cm 3 ) adding to the effects of shape anisotropy. In contrast, the film grown on ScErAs/GaAs, experiences a compression strain, resulting in an out-of-plane strain-induced anisotropy (∼3.3x10 6 erg/cm 3 ) which almost totally cancels the effects of shape anisotropy, thus rendering the film virtually isotropic. This results in the formation of stripe domains in remanence. In addition, small, but well-defined 2-fold and 4-fold in-plane anisotropy coexist in each sample with weak, but interesting strain dependence. Transport measurement shows small (<1%) magnetoresistance effects in the compression film, but negligible magnetoresistance in the relaxed and tension strained samples

  3. Interlayer exchange coupling, crystalline and magnetic structure in Fe/CsCl-FeSi multilayers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dekoster, J.; Degroote, S.; Meersschaut, J.; Moons, R.; Vantomme, A. [K.U. Leuven, Instituut voor Kern- en Stralingsfysica (Belgium); Bottyan, L.; Deak, L.; Szilagyi, E.; Nagy, D.L. [KFKI Research Institute for Particle and Nuclear Physics (Hungary); Baron, A.Q.R. [European Synchrotron Radiation Facility (France); Langouche, G. [K.U. Leuven, Instituut voor Kern- en Stralingsfysica (Belgium)

    1999-09-15

    Crystalline and magnetic structure as well as the interlayer exchange coupling in MBE grown Fe/FeSi multilayers are investigated. From conversion electron Moessbauer spectroscopy and ion beam channeling measurements the spacer FeSi material is found to be stabilized in a crystalline metastable metallic FeSi phase with the CsCl structure. Strong non-oscillatory interlayer exchange coupling is identified with magnetometry and synchrotron Moessbauer reflectometry. From the fits of the time spectrum and the resonant {phi}-{phi} scans a model for the sublayer magnetization of the multilayer is deduced.

  4. Structural, electrical and magnetic properties of epitaxial La{sub 0.7}Sr{sub 0.3}CoO{sub 3} thin films grown on SrTiO{sub 3} and LaAlO{sub 3} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Othmen, Z. [Unité Nanomatériaux et Photonique, Faculté des Sciences de Tunis, 2092 El Manar Tunis (Tunisia); Schulman, A., E-mail: schulman@df.uba.ar [Laboratoire des Matériaux et du Génie Physique, UMR 5628 CNRS-UDG-Grenoble INP, Minatec 3, Parvis Louis Néel, CS 50257, 38016 Grenoble Cedex 1 (France); Departamento de Física, FCEyN, UBA and IFIBA, Conicet, Pabellón 1, Ciudad Universitaria, 1428 Buenos Aires (Argentina); Daoudi, K. [Unité Nanomatériaux et Photonique, Faculté des Sciences de Tunis, 2092 El Manar Tunis (Tunisia); Physics Department, United Arab Emirates University, P.O. Box 17551, Al-Ain (United Arab Emirates); Boudard, M. [Laboratoire des Matériaux et du Génie Physique, UMR 5628 CNRS-UDG-Grenoble INP, Minatec 3, Parvis Louis Néel, CS 50257, 38016 Grenoble Cedex 1 (France); Acha, C. [Departamento de Física, FCEyN, UBA and IFIBA, Conicet, Pabellón 1, Ciudad Universitaria, 1428 Buenos Aires (Argentina); Roussel, H. [Laboratoire des Matériaux et du Génie Physique, UMR 5628 CNRS-UDG-Grenoble INP, Minatec 3, Parvis Louis Néel, CS 50257, 38016 Grenoble Cedex 1 (France); Oueslati, M. [Unité Nanomatériaux et Photonique, Faculté des Sciences de Tunis, 2092 El Manar Tunis (Tunisia); Tsuchiya, T. [National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8565 (Japan)

    2014-07-01

    La{sub 0.7}Sr{sub 0.3}CoO{sub 3} (LSCO) thin films have been epitaxially grown on SrTiO{sub 3} (STO) and LaAlO{sub 3} (LAO) substrates by metal organic deposition. The effects of the strain – induced by clamping – on the structural and physical properties of the films were studied. For that, we have performed resistivity and magnetization studies as a function of temperature and magnetic field as well as X-ray diffraction and Raman spectroscopy measurements. Our X-ray results are similar for both substrates showing that the 20 nm films are fully strained while thicker films have two components corresponding to a fully strained and a relaxed component. Relaxation induced by increasing film thickness (up to 100 nm) results in a systematic evolution of the out of plane crystallographic cell parameter toward the bulk LSCO values. Raman spectra of the thinner films exhibit specific modes which are not present in the bulk LSCO spectra. These modes disappear for thicker films which are totally relaxed. All the samples show similar magnetic behavior independently of the thickness and the substrate with a Curie temperature (T{sub C}) around 210 K. Relative changes in resistivity due to the film thickness are larger than 3 orders of magnitude with a relatively small influence of the type of strain induced by the substrate (compressive or tensile). Moreover whereas the relaxed film (100 nm thick) shows similar transport properties as the bulk sample, the fully strained film (20 nm thick) shows a 3D variable range hopping conduction with a higher degree of localization which is a direct result of the strain state.

  5. Structure and magnetism in novel group IV element-based magnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Tsui, Frank [Univ. of North Carolina, Chapel Hill, NC (United States)

    2013-08-14

    The project is to investigate structure, magnetism and spin dependent states of novel group IV element-based magnetic thin films and heterostructures as a function of composition and epitaxial constraints. The materials systems of interest are Si-compatible epitaxial films and heterostructures of Si/Ge-based magnetic ternary alloys grown by non-equilibrium molecular beam epitaxy (MBE) techniques, specifically doped magnetic semiconductors (DMS) and half-metallic Heusler alloys. Systematic structural, chemical, magnetic, and electrical measurements are carried out, using x-ray microbeam techniques, magnetotunneling spectroscopy and microscopy, and magnetotransport. The work is aimed at elucidating the nature and interplay between structure, chemical order, magnetism, and spin-dependent states in these novel materials, at developing materials and techniques to realize and control fully spin polarized states, and at exploring fundamental processes that stabilize the epitaxial magnetic nanostructures and control the electronic and magnetic states in these complex materials. Combinatorial approach provides the means for the systematic studies, and the complex nature of the work necessitates this approach.

  6. Structural and magnetic properties of epitaxial delafossite CuFeO{sub 2} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, Toyanath; Senty, Tess R.; Trappen, Robbyn; Zhou, Jinling; Borisov, Pavel; Holcomb, Mikel B.; Bristow, Alan D.; Lederman, David [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States); Chen, Song; Song, Xueyan [Department of Mechanical and Aerospace Engineering, West Virginia University, Morgantown, West Virginia 26506-6070 (United States); Ferrari, Piero; Cabrera, Alejandro L. [Pontificia Universidad Catolica, Instituto de Física, Santiago (Chile)

    2015-01-07

    Growth of pure phase delafossite CuFeO{sub 2} thin films on Al{sub 2}O{sub 3} (00.1) substrates by pulsed laser deposition was systematically investigated as a function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15 eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO{sub 2} films demonstrated a phase transition at T{sub C} ≈ 15 ± 1 K, which agrees with the first antiferromagnetic transition at 14 K in the bulk CuFeO{sub 2}. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis.

  7. A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors

    International Nuclear Information System (INIS)

    Pietrzyk, M.A.; Kowalski, B.J.; Orlowski, B.A.; Knoff, W.; Story, T.; Dobrowolski, W.; Slynko, V.E.; Slynko, E.I.; Johnson, R.L.

    2010-01-01

    In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV. (authors)

  8. Bulk Single Crystal-Like Structural and Magnetic Characteristics of Epitaxial Spinel Ferrite Thin Films with Elimination of Antiphase Boundaries.

    Science.gov (United States)

    Singh, Amit V; Khodadadi, Behrouz; Mohammadi, Jamileh Beik; Keshavarz, Sahar; Mewes, Tim; Negi, Devendra Singh; Datta, Ranjan; Galazka, Zbigniew; Uecker, Reinhard; Gupta, Arunava

    2017-08-01

    Spinel ferrite NiFe 2 O 4 thin films have been grown on three isostructural substrates, MgAl 2 O 4 , MgGa 2 O 4 , and CoGa 2 O 4 using pulsed laser deposition. These substrates have lattice mismatches of 3.1%, 0.8%, and 0.2%, respectively, with NiFe 2 O 4 . As expected, the films grown on MgAl 2 O 4 substrate show the presence of the antiphase boundary defects. However, no antiphase boundaries (APBs) are observed for films grown on near-lattice-matched substrates MgGa 2 O 4 and CoGa 2 O 4 . This demonstrates that by using isostructural and lattice-matched substrates, the formation of APBs can be avoided in NiFe 2 O 4 thin films. Consequently, static and dynamic magnetic properties comparable with the bulk can be realized. Initial results indicate similar improvements in film quality and magnetic properties due to the elimination of APBs in other members of the spinel ferrite family, such as Fe 3 O 4 and CoFe 2 O 4 , which have similar crystallographic structure and lattice constants as NiFe 2 O 4 . © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Control of the magnetic properties of LaMnO3 epitaxial thin films grown by Pulsed Laser Deposition

    Science.gov (United States)

    Martinez, Benjamin; Roqueta, Jaume; Pomar, Alberto; Balcells, Lluis; Frontera, Carlos; Konstantinovic, Zorica; Sandiumenge, Felip; Santiso, Jose; Advanced materials characterization Team; Thin films growth Team

    2015-03-01

    LaMnO3 (LMO), the parent compound of colossal magnetoresistance based manganites has gained renewed attention as a building block in heterostructures with unexpected properties. In its bulk phase, stoichiometric LMO is an A-type antiferromagnetic (AFM) insulator (TN = 140K) with orthorhombic structure that easily accommodate an oxygen excess by generating cationic (La or Mn) vacancies. As a result, a fraction of Mn 3+ changes to Mn 4+ leading to a double-exchange mediated ferromagnetic (FM) behavior. In thin films the AFM phase has been elusive up to now and thin films with FM ordering are usually reported. In this work, we have systematically studied the growth process of LaMnO3 thin films by pulsed laser deposition on SrTiO3 (001) substrates under different oxygen partial pressures (PO2) . A close correlation between the structure (explored by XRD) and the magnetic properties (SQUID measurements) of the films with PO2 has been identified. At high PO2 FM behavior is observed. In contrast, at very low PO2, the results obtained for unit cell volume (close to stoichiometric bulk values) and magnetic moment (0.2 μB/Mn) strongly indicate antiferromagnetic ordering. We acknowledge financial support from the Spanish MINECO (MAT2012-33207).

  10. The Radius and Entropy of a Magnetized, Rotating, Fully Convective Star: Analysis with Depth-dependent Mixing Length Theories

    Science.gov (United States)

    Ireland, Lewis G.; Browning, Matthew K.

    2018-04-01

    Some low-mass stars appear to have larger radii than predicted by standard 1D structure models; prior work has suggested that inefficient convective heat transport, due to rotation and/or magnetism, may ultimately be responsible. We examine this issue using 1D stellar models constructed using Modules for Experiments in Stellar Astrophysics (MESA). First, we consider standard models that do not explicitly include rotational/magnetic effects, with convective inhibition modeled by decreasing a depth-independent mixing length theory (MLT) parameter α MLT. We provide formulae linking changes in α MLT to changes in the interior specific entropy, and hence to the stellar radius. Next, we modify the MLT formulation in MESA to mimic explicitly the influence of rotation and magnetism, using formulations suggested by Stevenson and MacDonald & Mullan, respectively. We find rapid rotation in these models has a negligible impact on stellar structure, primarily because a star’s adiabat, and hence its radius, is predominantly affected by layers near the surface; convection is rapid and largely uninfluenced by rotation there. Magnetic fields, if they influenced convective transport in the manner described by MacDonald & Mullan, could lead to more noticeable radius inflation. Finally, we show that these non-standard effects on stellar structure can be fabricated using a depth-dependent α MLT: a non-magnetic, non-rotating model can be produced that is virtually indistinguishable from one that explicitly parameterizes rotation and/or magnetism using the two formulations above. We provide formulae linking the radially variable α MLT to these putative MLT reformulations.

  11. Numerical solution of the Fokker-Planck equation of fully ionized magnetized plasmas and classical transport coefficients

    International Nuclear Information System (INIS)

    Bendib, A.; Bennaceur-Doumaz, D.; El Lemdani, F.

    2002-01-01

    A new numerical approach to solve the linear integrodifferential Fokker-Planck equation (FPE), which describes a collisional and magnetized plasma, is presented. For this purpose, the FPE is reduced to a simple set of ordinary differential equations, which can be easily solved, with the use of standard numerical methods. The transport coefficients induced by the first anisotropic distribution function computed by Braginskii [Reviews of Plasma Physics (Consultants Bureau, New York, 1965), Vol. 1] and improved by Epperlein and Haines [Phys. Fluids 29, 1029 (1986)], have been recovered. The viscosity coefficients are computed for arbitrary atomic numbers and arbitrary magnetic field strength and are compared to the results reported in the literature

  12. Searching for prostate cancer by fully automated magnetic resonance imaging classification: deep learning versus non-deep learning.

    Science.gov (United States)

    Wang, Xinggang; Yang, Wei; Weinreb, Jeffrey; Han, Juan; Li, Qiubai; Kong, Xiangchuang; Yan, Yongluan; Ke, Zan; Luo, Bo; Liu, Tao; Wang, Liang

    2017-11-13

    Prostate cancer (PCa) is a major cause of death since ancient time documented in Egyptian Ptolemaic mummy imaging. PCa detection is critical to personalized medicine and varies considerably under an MRI scan. 172 patients with 2,602 morphologic images (axial 2D T2-weighted imaging) of the prostate were obtained. A deep learning with deep convolutional neural network (DCNN) and a non-deep learning with SIFT image feature and bag-of-word (BoW), a representative method for image recognition and analysis, were used to distinguish pathologically confirmed PCa patients from prostate benign conditions (BCs) patients with prostatitis or prostate benign hyperplasia (BPH). In fully automated detection of PCa patients, deep learning had a statistically higher area under the receiver operating characteristics curve (AUC) than non-deep learning (P = 0.0007 deep learning method and 0.70 (95% CI 0.63-0.77) for non-deep learning method, respectively. Our results suggest that deep learning with DCNN is superior to non-deep learning with SIFT image feature and BoW model for fully automated PCa patients differentiation from prostate BCs patients. Our deep learning method is extensible to image modalities such as MR imaging, CT and PET of other organs.

  13. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  14. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  15. Thickness dependent structural, magnetic and magneto-transport properties of epitaxial Nd{sub 0.50}Sr{sub 0.50}MnO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pawan, E-mail: p.kumar@krmangalam.edu.in [School of Basic and Applied Sciences, K. R. Mangalam University, Sohna Road, Gurgaon, Haryana 122103 (India); Singh, Hari Krishna, E-mail: hks65@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)

    2016-05-06

    We report the thickness-dependent structural, magnetic and magneto-transport properties in epitaxial Nd{sub 0.50}Sr{sub 0.50}MnO{sub 3} thin films (10 to 300nm) prepared by DC magnetron sputtering technique on single crystalline (001) oriented substrate LaAlO{sub 3}. X-ray diffraction pattern reveals the epitaxial growth of all the films and the out-of-plane lattice parameter of films were found to increase with thickness. As thickness of the film increases the paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature (T{sub C}), charge ordered transition temperature (T{sub CO}) and magnetic moment were found to increase with a strong bifurcation in ZFC-FC magnetization. The asymmetry in the coercivity seen in field dependent magnetization loops (M-H loops) suggests the presence of exchange bias (EB) effect. While temperature dependent resistivity of films show the semiconducting nature for thickness 10-200nm in temperature range from 5-300K, the film of thickness 300nm shows the insulator to metal transition with transition temperature (T{sub IM}) at 175K. Temperature dependent low field magnetoresistance (LFMR) measured at 4kOe found to decrease with thickness and for high field magnetoresistance (HFMR) at 40kOe and 60kOe also show similar dependence and a crossover at intermediate temperature range in the magnitude of MR between 10nm and 200nm films at constant field. Colossal increase in magnetoresistance observed for 10nm film at low temperature.

  16. Wireless charing pillow for a fully implantable hearing aid: Design of a circular array coil based on finite element analysis for reducing magnetic weak zones.

    Science.gov (United States)

    Lim, Hyung-Gyu; Kim, Jong Hoon; Shin, Dong Ho; Woo, Seong Tak; Seong, Ki Woong; Lee, Jyung Hyun; Kim, Myoung Nam; Wei, Qun; Cho, Jin-Ho

    2015-01-01

    Many types of fully implantable hearing aids have been developed. Most of these devices are implanted behind the ear. To maintain the implanted device for a long period of time, a rechargeable battery and wireless power transmission are used. Because inductive coupling is the most renowned method for wireless power transmission, many types of fully implantable hearing aids are transcutaneously powered using inductively coupled coils. Some patients with an implantable hearing aid require a method for conveniently charging their hearing aid while they are resting or sleeping. To address this need, a wireless charging pillow has been developed that employs a circular array coil as one of its primary parts. In this device, all primary coils are simultaneously driven to maintain an effective charging area regardless of head motion. In this case, however, there may be a magnetic weak zone that cannot be charged at the specific secondary coil's location on the array coil. In this study, assuming that a maximum charging distance is 4 cm, a circular array coil-serving as a primary part of the charging pillow-was designed using finite element analysis. Based on experimental results, the proposed device can charge an implantable hearing aid without a magnetic weak zone within 4 cm of the perpendicular distance between the primary and secondary coils.

  17. Effects of strain on the magnetic and transport properties of the epitaxial La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zarifi, M. [Department of Physics, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Kameli, P., E-mail: kameli@cc.iut.ac.ir [Department of Physics, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Ehsani, M.H. [Department of Physics, Semnan University, Semnan 35195-363 (Iran, Islamic Republic of); Ahmadvand, H.; Salamati, H. [Department of Physics, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)

    2016-12-15

    The epitaxial strain can considerably modify the physical properties of thin films compared to the bulk. This paper reports the effects of substrate-induced strain on La{sub 0.5}Ca{sub 0.5}MnO{sub 3} (LCMO) thin films, grown on (100) SrTiO{sub 3} (STO) and LaAlO{sub 3} (LAO) substrates by pulsed laser deposition technique. Transport and magnetic properties were found to be strongly dependent on strain type. It is also shown that compressive (tensile) strain leads to the increase (decrease) in the magnetization of the films. Moreover, it was observed that all LCMO films deposited on both LAO and STO substrates behave as an insulator, but LCMO/LAO thin films with compressive strain have lower resistivity than LCMO/STO thin films with tensile strain. Applying magnetic field to LCMO/STO thin films with thickness of 25 and 50 nm leads to very small change in the resistivity, while the effects of magnetic field on the sample with thickness of 125 nm leads to an insulator–metal transition. For LCMO/LAO thin films, the magnetic field has a strong impact on the resistivity of samples. The results show that the magnetoresistance (MR) is enhanced by increasing film thickness for LCMO/LAO samples, due to the relatively stronger phase separation. For LCMO/STO thin films MR is drastically decreased by reduction of film thickness, which is attributed to the enhancement of the charge–orbital order (CO–O) accompanying the complex spin order (the so-called CE type). The changes of the antiferromagnetic structure from the CE to C type and the enhancement of the CE type could be attributed to the in-plane compressive and tensile strain, respectively. - Highlights: • Epitaxial La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films, grown on (100) SrTiO{sub 3} and LaAlO{sub 3} substrates. • The compressive strain leads to the increase in the magnetization of the films. • The tensile strain leads to the decrease in the magnetization of the films. • The magnetoresistance is enhanced by

  18. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  19. Microwave dynamics of YBCO bi-epitaxial Josephson structures

    DEFF Research Database (Denmark)

    Constantinian, K. Y.; Ovsyannikov, G. A.; Mashtakov, A. D.

    1996-01-01

    The processes of interaction of microwaves (frequency View the MathML source) with a single high-Tc superconducting YBa2Cu3Ox (YBCO) bi-epitaxial grain-boundary junction and with an array of two junctions connected in series, have been investigated experimentally at temperatures T = 4.2− 77 K......, as well as the subharmonic detector response at weak magnetic fields φ microwave field induced frequency synchronization of two series connected bi-epitaxial YBCO junctions....

  20. Helimagnetic structures in epitaxial Nd/Y superlattices and alloys

    DEFF Research Database (Denmark)

    Everitt, B.A.; Salamon, M.B.; Borchers, J.A.

    1997-01-01

    The complex magnetic structure of Nd exhibits a new magnetic phase when grown epitaxially, either as a stabilized double hexagonal close-packed alloy, or as part of a Nd/Y superlattice. In the alloy and in those superlattices with small Nd/Y ratios, the incommensurate b axis modulated structure e...

  1. Fully automated quantification of regional cerebral blood flow with three-dimensional stereotaxic region of interest template. Validation using magnetic resonance imaging. Technical note

    Energy Technology Data Exchange (ETDEWEB)

    Takeuchi, Ryo; Katayama, Shigenori; Takeda, Naoya; Fujita, Katsuzo [Nishi-Kobe Medical Center (Japan); Yonekura, Yoshiharu [Fukui Medical Univ., Matsuoka (Japan); Konishi, Junji [Kyoto Univ. (Japan). Graduate School of Medicine

    2003-03-01

    The previously reported three-dimensional stereotaxic region of interest (ROI) template (3DSRT-t) for the analysis of anatomically standardized technetium-99m-L,L-ethyl cysteinate dimer ({sup 99m}Tc-ECD) single photon emission computed tomography (SPECT) images was modified for use in a fully automated regional cerebral blood flow (rCBF) quantification software, 3DSRT, incorporating an anatomical standardization engine transplanted from statistical parametric mapping 99 and ROIs for quantification based on 3DSRT-t. Three-dimensional T{sub 2}-weighted magnetic resonance images of 10 patients with localized infarcted areas were compared with the ROI contour of 3DSRT, and the positions of the central sulcus in the primary sensorimotor area were also estimated. All positions of the 20 lesions were in strict accordance with the ROI delineation of 3DSRT. The central sulcus was identified on at least one side of 210 paired ROIs and in the middle of 192 (91.4%) of these 210 paired ROIs among the 273 paired ROIs of the primary sensorimotor area. The central sulcus was recognized in the middle of more than 71.4% of the ROIs in which the central sulcus was identifiable in the respective 28 slices of the primary sensorimotor area. Fully automated accurate ROI delineation on anatomically standardized images is possible with 3DSRT, which enables objective quantification of rCBF and vascular reserve in only a few minutes using {sup 99m}Tc-ECD SPECT images obtained by the resting and vascular reserve (RVR) method. (author)

  2. Fully automated quantification of regional cerebral blood flow with three-dimensional stereotaxic region of interest template. Validation using magnetic resonance imaging. Technical note

    International Nuclear Information System (INIS)

    Takeuchi, Ryo; Katayama, Shigenori; Takeda, Naoya; Fujita, Katsuzo; Yonekura, Yoshiharu; Konishi, Junji

    2003-01-01

    The previously reported three-dimensional stereotaxic region of interest (ROI) template (3DSRT-t) for the analysis of anatomically standardized technetium-99m-L,L-ethyl cysteinate dimer ( 99m Tc-ECD) single photon emission computed tomography (SPECT) images was modified for use in a fully automated regional cerebral blood flow (rCBF) quantification software, 3DSRT, incorporating an anatomical standardization engine transplanted from statistical parametric mapping 99 and ROIs for quantification based on 3DSRT-t. Three-dimensional T 2 -weighted magnetic resonance images of 10 patients with localized infarcted areas were compared with the ROI contour of 3DSRT, and the positions of the central sulcus in the primary sensorimotor area were also estimated. All positions of the 20 lesions were in strict accordance with the ROI delineation of 3DSRT. The central sulcus was identified on at least one side of 210 paired ROIs and in the middle of 192 (91.4%) of these 210 paired ROIs among the 273 paired ROIs of the primary sensorimotor area. The central sulcus was recognized in the middle of more than 71.4% of the ROIs in which the central sulcus was identifiable in the respective 28 slices of the primary sensorimotor area. Fully automated accurate ROI delineation on anatomically standardized images is possible with 3DSRT, which enables objective quantification of rCBF and vascular reserve in only a few minutes using 99m Tc-ECD SPECT images obtained by the resting and vascular reserve (RVR) method. (author)

  3. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R

    1980-01-01

    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  4. Mechanisms of stress generation and relaxation during pulsed laser deposition of epitaxial Fe-Pd magnetic shape memory alloy films on MgO

    International Nuclear Information System (INIS)

    Edler, Tobias; Mayr, S G; Buschbeck, Joerg; Mickel, Christine; Faehler, Sebastian

    2008-01-01

    Mechanical stress generation during epitaxial growth of Fe-Pd thin films on MgO from pulsed laser deposition is a key parameter for the suitability in shape memory applications. By employing in situ substrate curvature measurements, we determine the stress states as a function of film thickness and composition. Depending on composition, different stress states are observed during initial film growth, which can be attributed to different misfits. Compressive stress generation by atomic peening is observed in the later stages of growth. Comparison with ex situ x-ray based strain measurements allows integral and local stress to be distinguished and yields heterogeneities of the stress state between coherent and incoherent regions. In combination with cross-sectional TEM measurements the relevant stress relaxation mechanism is identified to be stress-induced martensite formation with (111) twinning

  5. Histograms of Oriented 3D Gradients for Fully Automated Fetal Brain Localization and Robust Motion Correction in 3 T Magnetic Resonance Images.

    Science.gov (United States)

    Serag, Ahmed; Macnaught, Gillian; Denison, Fiona C; Reynolds, Rebecca M; Semple, Scott I; Boardman, James P

    2017-01-01

    Fetal brain magnetic resonance imaging (MRI) is a rapidly emerging diagnostic imaging tool. However, automated fetal brain localization is one of the biggest obstacles in expediting and fully automating large-scale fetal MRI processing. We propose a method for automatic localization of fetal brain in 3 T MRI when the images are acquired as a stack of 2D slices that are misaligned due to fetal motion. First, the Histogram of Oriented Gradients (HOG) feature descriptor is extended from 2D to 3D images. Then, a sliding window is used to assign a score to all possible windows in an image, depending on the likelihood of it containing a brain, and the window with the highest score is selected. In our evaluation experiments using a leave-one-out cross-validation strategy, we achieved 96% of complete brain localization using a database of 104 MRI scans at gestational ages between 34 and 38 weeks. We carried out comparisons against template matching and random forest based regression methods and the proposed method showed superior performance. We also showed the application of the proposed method in the optimization of fetal motion correction and how it is essential for the reconstruction process. The method is robust and does not rely on any prior knowledge of fetal brain development.

  6. Histograms of Oriented 3D Gradients for Fully Automated Fetal Brain Localization and Robust Motion Correction in 3 T Magnetic Resonance Images

    Directory of Open Access Journals (Sweden)

    Ahmed Serag

    2017-01-01

    Full Text Available Fetal brain magnetic resonance imaging (MRI is a rapidly emerging diagnostic imaging tool. However, automated fetal brain localization is one of the biggest obstacles in expediting and fully automating large-scale fetal MRI processing. We propose a method for automatic localization of fetal brain in 3 T MRI when the images are acquired as a stack of 2D slices that are misaligned due to fetal motion. First, the Histogram of Oriented Gradients (HOG feature descriptor is extended from 2D to 3D images. Then, a sliding window is used to assign a score to all possible windows in an image, depending on the likelihood of it containing a brain, and the window with the highest score is selected. In our evaluation experiments using a leave-one-out cross-validation strategy, we achieved 96% of complete brain localization using a database of 104 MRI scans at gestational ages between 34 and 38 weeks. We carried out comparisons against template matching and random forest based regression methods and the proposed method showed superior performance. We also showed the application of the proposed method in the optimization of fetal motion correction and how it is essential for the reconstruction process. The method is robust and does not rely on any prior knowledge of fetal brain development.

  7. Epitaxial thin films

    Science.gov (United States)

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  8. Electrical resistivity anomaly, valence shift of Pr ion, and magnetic behavior in epitaxial (Pr.sub.1-y./sub.Y.sub.y./sub.).sub.1-x./sub.Ca.sub.x./sub.CoO.sub.3./sub. thin films under compressive strain

    Czech Academy of Sciences Publication Activity Database

    Fujishiro, H.; Noda, Y.; Akuzawa, K.; Naito, T.; Ito, A.; Goto, T.; Maryško, Miroslav; Jirák, Zdeněk; Hejtmánek, Jiří; Nitta, K.

    2017-01-01

    Roč. 121, č. 11 (2017), s. 1-8, č. článku 115104. ISSN 0021-8979 R&D Projects: GA ČR GA17-04412S Institutional support: RVO:68378271 Keywords : perovskite cobaltites * spin state transition * variable valence * epitaxial strain * XANES Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.068, year: 2016

  9. Epitaxial growth of highly-crystalline spinel ferrite thin films on perovskite substrates for all-oxide devices.

    Science.gov (United States)

    Moyer, Jarrett A; Gao, Ran; Schiffer, Peter; Martin, Lane W

    2015-06-01

    The potential growth modes for epitaxial growth of Fe3O4 on SrTiO3 (001) are investigated through control of the energetics of the pulsed-laser deposition growth process (via substrate temperature and laser fluence). We find that Fe3O4 grows epitaxially in three distinct growth modes: 2D-like, island, and 3D-to-2D, the last of which is characterized by films that begin growth in an island growth mode before progressing to a 2D growth mode. Films grown in the 2D-like and 3D-to-2D growth modes are atomically flat and partially strained, while films grown in the island growth mode are terminated in islands and fully relaxed. We find that the optimal structural, transport, and magnetic properties are obtained for films grown on the 2D-like/3D-to-2D growth regime boundary. The viability for including such thin films in perovskite-based all-oxide devices is demonstrated by growing a Fe3O4/La0.7Sr0.3MnO3 spin valve epitaxially on SrTiO3.

  10. Epitaxial growth of hybrid nanostructures

    Science.gov (United States)

    Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

    2018-02-01

    Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

  11. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  12. Structural, magnetic and electrical transport properties in electron-doped La{sub 0.85}Hf{sub 0.15}MnO{sub 3} epitaxial film

    Energy Technology Data Exchange (ETDEWEB)

    Han, Li-an; Zhu, Hua-ze; Zhang, Tao [Xi' an University of Science and Technology, Department of Applied Physics, Xi' an (China); Ma, Zi-wei [Yuncheng University, Department of Physics and Electronic Engineering, Yuncheng (China); Chen, Chang-le [Northwestern Polytechnical University, Department of Applied Physics, Xi' an (China)

    2017-03-15

    Using a pulsed laser deposition method, the electron-doped La{sub 0.85}Hf{sub 0.15}MnO{sub 3} (LHMO) film with the thickness of 90 nm was epitaxially grown on LaAlO{sub 3} (001) single crystal substrate. The structural, magnetic and electrical transport properties of the film have been studied comprehensively. The X-ray diffraction patterns confirm that LHMO film is of single phase, good quality and c axis orientation. The film undergoes a ferromagnetic-like ordering to paramagnetic states at T{sub C} =280 K. Moreover, a spin glass behavior observed in the film may be attributed to the strain effects. Using the percolation theory, we have analyzed the resistivity data ρ (T) of the film and given an excellent fit in the whole temperature range. Particularly, large temperature coefficient of resistance of 11.27% K{sup -} {sup 1} has been discovered near sub-room-temperature, indicating that LHMO film could be useful for bolometric applications. (orig.)

  13. GaN:Co epitaxial layers grown by MOVPE

    Czech Academy of Sciences Publication Activity Database

    Šimek, P.; Sedmidubský, D.; Klímová, K.; Mikulics, M.; Maryško, Miroslav; Veselý, M.; Jurek, Karel; Sofer, Z.

    2015-01-01

    Roč. 44, Mar (2015), 62-68 ISSN 0022-0248 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics Subject RIV: CA - Inorganic Chemistry Impact factor: 1.462, year: 2015

  14. Concurrent bandgap narrowing and polarization enhancement in epitaxial ferroelectric nanofilms

    Czech Academy of Sciences Publication Activity Database

    Tyunina, Marina; Yao, L.; Chvostová, Dagmar; Dejneka, Alexandr; Kocourek, Tomáš; Jelínek, Miroslav; Trepakov, Vladimír; van Dijken, S.

    2015-01-01

    Roč. 16, č. 2 (2015), 026002 ISSN 1468-6996 R&D Projects: GA ČR GAP108/12/1941 Institutional support: RVO:68378271 Keywords : epitaxial growth * ferroelectric nanofilms Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.433, year: 2015

  15. Microwave impedance of epitaxial high-temperature superconductor films

    International Nuclear Information System (INIS)

    Melkov, G.A.; Malyshev, V.Yu.; Bagada, A.V.

    1995-01-01

    In the 3 cm band dependences of the epitaxial HTS film surface resistance on the magnitude of ac and dc magnetic fields have been measured. YBa 2 Cu 3 O 7-σ films on sapphire were investigated. It was established that alternating magnetic field produces a stronger impact on the surface resistance than dc field. To explain experimental results the assumption is made that a HTS film is not an ideal superconductor and consists of series-connected sections of various types: sections of an ideal superconductor, sections of low and large resistance intragranular Josephson junctions, shunted by the ideal superconductor, and finally, sections of intergranular Josephson junctions few for epitaxial films. In these conditions the dependences of the surface resistance on dc magnetic field are caused by Abrikosov's vortices moving in ideal superconductive sections, and dependences on the amplitude of ac magnetic field are caused by switching of large resistance junctions to a low resistance state

  16. Epitaxial semiconductor quantum wires.

    Science.gov (United States)

    Wu, J; Chen, Y H; Wang, Z G

    2008-07-01

    The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.

  17. Fully automatic, multiorgan segmentation in normal whole body magnetic resonance imaging (MRI), using classification forests (CFs), convolutional neural networks (CNNs), and a multi-atlas (MA) approach.

    Science.gov (United States)

    Lavdas, Ioannis; Glocker, Ben; Kamnitsas, Konstantinos; Rueckert, Daniel; Mair, Henrietta; Sandhu, Amandeep; Taylor, Stuart A; Aboagye, Eric O; Rockall, Andrea G

    2017-10-01

    As part of a program to implement automatic lesion detection methods for whole body magnetic resonance imaging (MRI) in oncology, we have developed, evaluated, and compared three algorithms for fully automatic, multiorgan segmentation in healthy volunteers. The first algorithm is based on classification forests (CFs), the second is based on 3D convolutional neural networks (CNNs) and the third algorithm is based on a multi-atlas (MA) approach. We examined data from 51 healthy volunteers, scanned prospectively with a standardized, multiparametric whole body MRI protocol at 1.5 T. The study was approved by the local ethics committee and written consent was obtained from the participants. MRI data were used as input data to the algorithms, while training was based on manual annotation of the anatomies of interest by clinical MRI experts. Fivefold cross-validation experiments were run on 34 artifact-free subjects. We report three overlap and three surface distance metrics to evaluate the agreement between the automatic and manual segmentations, namely the dice similarity coefficient (DSC), recall (RE), precision (PR), average surface distance (ASD), root-mean-square surface distance (RMSSD), and Hausdorff distance (HD). Analysis of variances was used to compare pooled label metrics between the three algorithms and the DSC on a 'per-organ' basis. A Mann-Whitney U test was used to compare the pooled metrics between CFs and CNNs and the DSC on a 'per-organ' basis, when using different imaging combinations as input for training. All three algorithms resulted in robust segmenters that were effectively trained using a relatively small number of datasets, an important consideration in the clinical setting. Mean overlap metrics for all the segmented structures were: CFs: DSC = 0.70 ± 0.18, RE = 0.73 ± 0.18, PR = 0.71 ± 0.14, CNNs: DSC = 0.81 ± 0.13, RE = 0.83 ± 0.14, PR = 0.82 ± 0.10, MA: DSC = 0.71 ± 0.22, RE = 0.70 ± 0.34, PR = 0.77 ± 0.15. Mean surface distance

  18. Semiconductor to Metal Transition Characteristics of VO2/NiO Epitaxial Heterostructures Integrated with Si(100)

    Science.gov (United States)

    Molaei, Roya

    O/c-YSZ/Si(100) heterostructures were used as template to grow fully relaxed VO2 thin films. The detailed x-ray diffraction, transmission electron microscopy (TEM), electrical characterization results for the deposited films will be presented. In the framework on domain matching epitaxy, epitaxial growth of VO2 (tetragonal crystal structure at growth temperature) on NiO has been explained. Our detailed phi-scan X-ray diffraction measurements corroborate our understanding of the epitaxial growth and in-plane atomic arrangements at the interface. It was observed that the transition characteristics (sharpness, over which electrical property changes are completed, amplitude, transition temperature, and hysteresis) are a strong function of microstructure, strain, and stoichiometry. We have shown that by the choosing the right template layer, strain in the VO2 thin films can be fully relaxed and near-bulk VO2 transition temperatures can be achieved. Finally, I will present my research work on modification of semiconductor-to-metal transition characteristics and effect on room temperature magnetic properties of VO2 thin films upon laser annealing. While the microstructure (epitaxy, crystalline quality etc.) and phase were preserved, we envisage these changes to occur as a result of introduction of oxygen vacancies upon laser treatment.

  19. Epitaxy physical principles and technical implementation

    CERN Document Server

    Herman, Marian A; Sitter, Helmut

    2004-01-01

    Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

  20. The Global and Small-scale Magnetic Fields of Fully Convective, Rapidly Spinning M Dwarf Pair GJ65 A and B

    International Nuclear Information System (INIS)

    Kochukhov, Oleg; Lavail, Alexis

    2017-01-01

    The nearby M dwarf binary GJ65 AB, also known as BL Cet and UV Cet, is a unique benchmark for investigation of dynamo-driven activity of low-mass stars. Magnetic activity of GJ65 was repeatedly assessed by indirect means, such as studies of flares, photometric variability, X-ray, and radio emission. Here, we present a direct analysis of large-scale and local surface magnetic fields in both components. Interpreting high-resolution circular polarization spectra (sensitive to a large-scale field geometry) we uncovered a remarkable difference of the global stellar field topologies. Despite nearly identical masses and rotation rates, the secondary exhibits an axisymmetric, dipolar-like global field with an average strength of 1.3 kG while the primary has a much weaker, more complex, and non-axisymmetric 0.3 kG field. On the other hand, an analysis of the differential Zeeman intensification (sensitive to the total magnetic flux) shows the two stars having similar magnetic fluxes of 5.2 and 6.7 kG for GJ65 A and B, respectively, although there is evidence that the field strength distribution in GJ65 B is shifted toward a higher field strength compared to GJ65 A. Based on these complementary magnetic field diagnostic results, we suggest that the dissimilar radio and X-ray variability of GJ65 A and B is linked to their different global magnetic field topologies. However, this difference appears to be restricted to the upper atmospheric layers but does not encompass the bulk of the stars and has no influence on the fundamental stellar properties.

  1. Comparison between two alternative approaches for the analysis of polarization evolution of EM waves in a nonuniform, fully anisotropic medium. A magnetized plasma

    International Nuclear Information System (INIS)

    Segre, S. E.

    2001-01-01

    A comparison is made between two alternative approaches for the analysis of polarization evolution of em waves in a magnetized plasma. The two approaches are the Coupled Wave-Equation Formalism (CWF) and the Stokes Vector Formalism (SVF). After brief descriptions of the two formalisms the correspondence between them is spelled out. The two formalisms are then compared and their relative advantages and limitations are discussed [it

  2. MAGNET

    CERN Multimedia

    Benoit Curé

    2010-01-01

    The magnet worked very well at 3.8 T as expected, despite a technical issue that manifested twice in the cryogenics since June. All the other magnet sub-systems worked without flaw. The issue in the cryogenics was with the cold box: it could be observed that the cold box was getting progressively blocked, due to some residual humidity and air accumulating in the first thermal exchanger and in the adsorber at 65 K. This was later confirmed by the analysis during the regeneration phases. An increase in the temperature difference between the helium inlet and outlet across the heat exchanger and a pressure drop increase on the filter of the adsorber were observed. The consequence was a reduction of the helium flow, first compensated by the automatic opening of the regulation valves. But once they were fully opened, the flow and refrigeration power reduced as a consequence. In such a situation, the liquid helium level in the helium Dewar decreased, eventually causing a ramp down of the magnet current and a field...

  3. MAGNET

    CERN Multimedia

    B. Curé

    2013-01-01

    The magnet is fully stopped and at room temperature. The maintenance works and consolidation activities on the magnet sub-systems are progressing. To consolidate the cryogenic installation, two redundant helium compressors will be installed as ‘hot spares’, to avoid the risk of a magnet downtime in case of a major failure of a compressor unit during operation. The screw compressors, their motors, the mechanical couplings and the concrete blocks are already available and stored at P5. The metallic structure used to access the existing compressors in SH5 will be modified to allow the installation of the two redundant ones. The plan is to finish the installation and commissioning of the hot spare compressors before the summer 2014. In the meantime, a bypass on the high-pressure helium piping will be installed for the connection of a helium drier unit later during the Long Shutdown 1, keeping this installation out of the schedule critical path. A proposal is now being prepared for the con...

  4. Optical effects induced by epitaxial tension in lead titanate

    Czech Academy of Sciences Publication Activity Database

    Dejneka, Alexandr; Chvostová, Dagmar; Pacherová, Oliva; Kocourek, Tomáš; Jelínek, Miroslav; Tyunina, Marina

    2018-01-01

    Roč. 112, č. 3 (2018), s. 1-5, č. článku 031111. ISSN 0003-6951 R&D Projects: GA ČR GA15-13778S; GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : epitaxy * inorganic compounds * optical properties * ferroelectric materials * optical metrology Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics , supercond.) Impact factor: 3.411, year: 2016

  5. Left Ventricle: Fully Automated Segmentation Based on Spatiotemporal Continuity and Myocardium Information in Cine Cardiac Magnetic Resonance Imaging (LV-FAST

    Directory of Open Access Journals (Sweden)

    Lijia Wang

    2015-01-01

    Full Text Available CMR quantification of LV chamber volumes typically and manually defines the basal-most LV, which adds processing time and user-dependence. This study developed an LV segmentation method that is fully automated based on the spatiotemporal continuity of the LV (LV-FAST. An iteratively decreasing threshold region growing approach was used first from the midventricle to the apex, until the LV area and shape discontinued, and then from midventricle to the base, until less than 50% of the myocardium circumference was observable. Region growth was constrained by LV spatiotemporal continuity to improve robustness of apical and basal segmentations. The LV-FAST method was compared with manual tracing on cardiac cine MRI data of 45 consecutive patients. Of the 45 patients, LV-FAST and manual selection identified the same apical slices at both ED and ES and the same basal slices at both ED and ES in 38, 38, 38, and 41 cases, respectively, and their measurements agreed within -1.6±8.7 mL, -1.4±7.8 mL, and 1.0±5.8% for EDV, ESV, and EF, respectively. LV-FAST allowed LV volume-time course quantitatively measured within 3 seconds on a standard desktop computer, which is fast and accurate for processing the cine volumetric cardiac MRI data, and enables LV filling course quantification over the cardiac cycle.

  6. Study of electric and magnetic field fluctuations from lower hybrid drift instability waves in the terrestrial magnetotail with the fully kinetic, semi-implicit, adaptive multi level multi domain method

    Science.gov (United States)

    Innocenti, M. E.; Norgren, C.; Newman, D.; Goldman, M.; Markidis, S.; Lapenta, G.

    2016-05-01

    The newly developed fully kinetic, semi-implicit, adaptive multi-level multi-domain (MLMD) method is used to simulate, at realistic mass ratio, the development of the lower hybrid drift instability (LHDI) in the terrestrial magnetotail over a large wavenumber range and at a low computational cost. The power spectra of the perpendicular electric field and of the fluctuations of the parallel magnetic field are studied at wavenumbers and times that allow to appreciate the onset of the electrostatic and electromagnetic LHDI branches and of the kink instability. The coupling between electric and magnetic field fluctuations observed by Norgren et al. ["Lower hybrid drift waves: Space observations," Phys. Rev. Lett. 109, 055001 (2012)] for high wavenumber LHDI waves in the terrestrial magnetotail is verified. In the MLMD simulations presented, a domain ("coarse grid") is simulated with low resolution. A small fraction of the entire domain is then simulated with higher resolution also ("refined grid") to capture smaller scale, higher frequency processes. Initially, the MLMD method is validated for LHDI simulations. MLMD simulations with different levels of grid refinement are validated against the standard semi-implicit particle in cell simulations of domains corresponding to both the coarse and the refined grid. Precious information regarding the applicability of the MLMD method to turbulence simulations is derived. The power spectra of MLMD simulations done with different levels of refinements are then compared. They consistently show a break in the magnetic field spectra at k⊥di˜30 , with di the ion skin depth and k⊥ the perpendicular wavenumber. The break is observed at early simulated times, Ωcit <6 , with Ωci the ion cyclotron frequency. It is due to the initial decoupling of electric and magnetic field fluctuations at intermediate and low wavenumbers, before the development of the electromagnetic LHDI branch. Evidence of coupling between electric and magnetic

  7. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  8. MgO monolayer epitaxy on Ni (100)

    Science.gov (United States)

    Sarpi, B.; Putero, M.; Hemeryck, A.; Vizzini, S.

    2017-11-01

    The growth of two-dimensional oxide films with accurate control of their structural and electronic properties is considered challenging for engineering nanotechnological applications. We address here the particular case of MgO ultrathin films grown on Ni (100), a system for which neither crystallization nor extended surface ordering has been established previously in the monolayer range. Using Scanning Tunneling Microscopy and Auger Electron Spectroscopy, we report on experiments showing MgO monolayer (ML) epitaxy on a ferromagnetic nickel surface, down to the limit of atomic thickness. Alternate steps of Mg ML deposition, O2 gas exposure, and ultrahigh vacuum thermal treatment enable the production of a textured film of ordered MgO nano-domains. This study could open interesting prospects for controlled epitaxy of ultrathin oxide films with a high magneto-resistance ratio on ferromagnetic substrates, enabling improvement in high-efficiency spintronics and magnetic tunnel junction devices.

  9. MAGNET

    CERN Multimedia

    B. Curé

    The first phase of the commissioning ended in August by a triggered fast dump at 3T. All parameters were nominal, and the temperature recovery down to 4.5K was carried out in two days by the cryogenics. In September, series of ramps were achieved up to 3 and finally 3.8T, while checking thoroughly the detectors in the forward region, measuring any movement of and around the HF. After the incident of the LHC accelerator on September 19th, corrective actions could be undertaken in the forward region. When all these displacements were fully characterized and repetitive, with no sign of increments in displacement at each field ramp, it was possible to start the CRAFT, Cosmic Run at Four Tesla (which was in fact at 3.8T). The magnet was ramped up to 18.16kA and the 3 week run went smoothly, with only 4 interruptions: due to the VIP visits on 21st October during the LHC inauguration day; a water leak on the cooling demineralized water circuit, about 1 l/min, that triggered a stop of the cooling pumps, and resulte...

  10. Cubic MnSb: Epitaxial growth of a predicted room temperature half-metal

    Science.gov (United States)

    Aldous, James D.; Burrows, Christopher W.; Sánchez, Ana M.; Beanland, Richard; Maskery, Ian; Bradley, Matthew K.; Dos Santos Dias, Manuel; Staunton, Julie B.; Bell, Gavin R.

    2012-02-01

    Epitaxial films including bulklike cubic and wurtzite polymorphs of MnSb have been grown by molecular beam epitaxy on GaAs via careful control of the Sb4/Mn flux ratio. Nonzero-temperature density functional theory was used to predict ab initio the half-metallicity of the cubic polymorph and compare its spin polarization as a function of reduced magnetization with that of the well known half-metal NiMnSb. In both cases, half-metallicity is lost at a threshold magnetization reduction, corresponding to a temperature T*350 K, making epitaxial cubic MnSb a promising candidate for efficient room temperature spin injection into semiconductors.

  11. Semiconductor Nanowires: Epitaxy and Applications

    OpenAIRE

    Mårtensson, Thomas

    2008-01-01

    Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. Heteroepitaxial growth of III-V nanowires on silicon substrates was demonstrated. This may enable direct band gap materials for optoelectronic devices, as well as high-mobility, low-contact resis...

  12. Three-dimensional lattice matching of epitaxially embedded nanoparticles

    Science.gov (United States)

    May, Brelon J.; Anderson, Peter M.; Myers, Roberto C.

    2017-02-01

    For a given degree of in-plane lattice mismatch between a two-dimensional (2D) epitaxial layer and a substrate (ɛIP*), there is a critical thickness above which interfacial defects form to relax the elastic strain energy. Here, we extend the 2D lattice-matching conditions to three-dimensions in order to predict the critical size beyond which epitaxially encased nanoparticles, characterized by both ɛIP* and out-of-plane lattice mismatch (ɛOP*), relax by dislocation formation. The critical particle length (Lc) at which defect formation proceeds is determined by balancing the reduction in elastic energy associated with dislocation introduction with the corresponding increase in defect energy. Our results, which use a modified Eshelby inclusion technique for an embedded, arbitrarily-faceted nanoparticle, provide new insight to the nanoepitaxy of low dimensional structures, especially quantum dots and nanoprecipitates. By engineering ɛIP* and ɛOP* , the predicted Lc for nanoparticles can be increased to well beyond the case of encapsulation in a homogenous matrix. For the case of truncated pyramidal shaped InAs, Lc 10.8 nm when fully embedded in GaAs (ɛIP* = ɛOP* = - 0.072); 16.4 nm when the particle is grown on GaAs, but capped with InSb (ɛIP* = - 0.072 and ɛOP* =+0.065); and a maximum of 18.4 nm if capped with an alloy corresponding to ɛOP* =+0.037. The effect, which we term "3D Poisson-stabilization" provides a means to increase the epitaxial strain tolerance in epitaxial heterostructures by tailoring ɛOP*.

  13. Dynamic nonlinearity in epitaxial BaTiO.sub.3./sub. films

    Czech Academy of Sciences Publication Activity Database

    Tyunina, Marina; Savinov, Maxim

    2016-01-01

    Roč. 94, č. 5 (2016), 1-6, č. článku 054109. ISSN 2469-9950 R&D Projects: GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : dynamic nonlinearity * epitaxial * BaTiO 3 films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  14. Fabrication of homoepitaxial ZnO films by low-temperature liquid-phase epitaxy

    Czech Academy of Sciences Publication Activity Database

    Ehrentraut, D.; Sato, H.; Miyamo, M.; Fukuda, T.; Nikl, Martin; Maeda, K.; Niikura, I.

    2006-01-01

    Roč. 287, - (2006), s. 367-371 ISSN 0022-0248 R&D Projects: GA MŠk 1P04ME716 Institutional research plan: CEZ:AV0Z10100521 Keywords : liquid phase epitaxy * oxides * zinc compounds Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.809, year: 2006

  15. Effect of epitaxy on interband transitions in ferroelectric KNbO.sub.3./sub..

    Czech Academy of Sciences Publication Activity Database

    Tyunina, Marina; Yao, L.D.; Chvostová, Dagmar; Kocourek, Tomáš; Jelínek, Miroslav; Dejneka, Alexandr; van Dijken, S.

    2015-01-01

    Roč. 17, Apr (2015), 043048 ISSN 1367-2630 R&D Projects: GA ČR(CZ) GA15-13853S; GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : ferroelectric * epitaxy * optica Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.570, year: 2015

  16. Composition tailoring in the Ce-doped multicomponent garnet epitaxial film scintillators

    Czech Academy of Sciences Publication Activity Database

    Průša, Petr; Kučera, M.; Mareš, Jiří A.; Onderišinová, Z.; Hanuš, M.; Babin, Vladimir; Beitlerová, Alena; Nikl, Martin

    2015-01-01

    Roč. 15, č. 8 (2015), s. 3715-3723 ISSN 1528-7483 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillation * liquid phase epitaxy * photoelectron yield * Ce 3+ * multicomponent garnet Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.425, year: 2015

  17. Magnets

    International Nuclear Information System (INIS)

    Young, I.R.

    1984-01-01

    A magnet pole piece for an NMR imaging magnet is made of a plurality of magnetic wires with one end of each wire held in a non-magnetic spacer, the other ends of the wires being brought to a pinch, and connected to a magnetic core. The wires may be embedded in a synthetic resin and the magnetisation and uniformity thereof can be varied by adjusting the density of the wires at the spacer which forms the pole piece. (author)

  18. Collapsed tetragonal phase as a strongly covalent and fully nonmagnetic state: Persistent magnetism with interlayer As-As bond formation in Rh-doped Ca0 .8Sr0 .2Fe2As2

    Science.gov (United States)

    Zhao, K.; Glasbrenner, J. K.; Gretarsson, H.; Schmitz, D.; Bednarcik, J.; Etter, M.; Sun, J. P.; Manna, R. S.; Al-Zein, A.; Lafuerza, S.; Scherer, W.; Cheng, J. G.; Gegenwart, P.

    2018-02-01

    A well-known feature of the CaFe2As2 -based superconductors is the pressure-induced collapsed tetragonal phase that is commonly ascribed to the formation of an interlayer As-As bond. Using detailed x-ray scattering and spectroscopy, we find that Rh-doped Ca0.8Sr0.2Fe2As2 does not undergo a first-order phase transition and that local Fe moments persist despite the formation of interlayer As-As bonds. Our density functional theory calculations reveal that the Fe-As bond geometry is critical for stabilizing magnetism and the pressure-induced drop in the c lattice parameter observed in pure CaFe2As2 is mostly due to a constriction within the FeAs planes. The collapsed tetragonal phase emerges when covalent bonding of strongly hybridized Fe 3 d and As 4 p states completely wins out over their exchange splitting. Thus the collapsed tetragonal phase is properly understood as a strong covalent phase that is fully nonmagnetic with the As-As bond forming as a by-product.

  19. Fully CMOS-compatible titanium nitride nanoantennas

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  20. Spin Filtering in Epitaxial Spinel Films with Nanoscale Phase Separation

    KAUST Repository

    Li, Peng

    2017-05-08

    The coexistence of ferromagnetic metallic phase and antiferromagnetic insulating phase in nanoscaled inhomogeneous perovskite oxides accounts for the colossal magnetoresistance. Although the model of spin-polarized electron transport across antiphase boundaries has been commonly employed to account for large magnetoresistance (MR) in ferrites, the magnetic anomalies, the two magnetic phases and enhanced molecular moment, are still unresolved. We observed a sizable MR in epitaxial spinel films (NiCo2O4-δ) that is much larger than that commonly observed in spinel ferrites. Detailed analysis reveals that this MR can be attributed to phase separation, in which the perfect ferrimagnetic metallic phase and ferrimagnetic insulating phase coexist. The magnetic insulating phase plays an important role in spin filtering in these phase separated spinel oxides, leading to a sizable MR effect. A spin filtering model based on Zeeman effect and direct tunneling is developed to account for MR of the phase separated films.

  1. Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

    Science.gov (United States)

    Meng, Siqin; Yue, Zhenxing; Zhang, Xiaozhi; Li, Longtu

    2014-01-01

    Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

  2. Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Siqin; Yue, Zhenxing, E-mail: yuezhx@tsinghua.edu.cn; Zhang, Xiaozhi; Li, Longtu

    2014-01-30

    Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

  3. Epitaxial graphene electronic structure and transport

    International Nuclear Information System (INIS)

    De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

    2010-01-01

    Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

  4. Epitaxial graphene electronic structure and transport

    Energy Technology Data Exchange (ETDEWEB)

    De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N [School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Stroscio, Joseph A [Center for Nanoscale Science and Technology, NIST, Gaithersburg, MD 20899 (United States); Haddon, Robert [Center for Nanoscale Science and Engineering, Departments of Chemistry and Chemical and Environmental Engineering, University of California, Riverside, CA 92521 (United States); Piot, Benjamin; Faugeras, Clement; Potemski, Marek [LNCMI -CNRS, Grenoble, 38042 Cedex 9 (France); Moon, Jeong-Sun, E-mail: walt.deheer@physics.gateh.ed [HRL Laboratories LLC, Malibu, CA 90265 (United States)

    2010-09-22

    Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

  5. Approaching the Dirac point in high-mobility multilayer epitaxial graphene

    Czech Academy of Sciences Publication Activity Database

    Orlita, Milan; Faugeras, C.; Plochocka, P.; Neugebauer, P.; Martinez, G.; Maude, D. K.; Barra, A. L.; Sprinkle, M.; Berger, C.; de Heer, W.A.; Potemski, M.

    2008-01-01

    Roč. 101, č. 26 (2008), 267601/1-267601/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652 Grant - others:EU(XE) RITA-CT-2003-505474 Institutional research plan: CEZ:AV0Z10100521 Keywords : multilayer epitaxial graphene * Dirac fermions * magnetic field Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  6. Android Fully Loaded

    CERN Document Server

    Huddleston, Rob

    2012-01-01

    Fully loaded with the latest tricks and tips on your new Android! Android smartphones are so hot, they're soaring past iPhones on the sales charts. And the second edition of this muscular little book is equally impressive--it's packed with tips and tricks for getting the very most out of your latest-generation Android device. Start Facebooking and tweeting with your Android mobile, scan barcodes to get pricing and product reviews, download your favorite TV shows--the book is positively bursting with practical and fun how-tos. Topics run the gamut from using speech recognition, location-based m

  7. Fully nonlinear elliptic equations

    CERN Document Server

    Caffarelli, Luis A

    1995-01-01

    The goal of the book is to extend classical regularity theorems for solutions of linear elliptic partial differential equations to the context of fully nonlinear elliptic equations. This class of equations often arises in control theory, optimization, and other applications. The authors give a detailed presentation of all the necessary techniques. Instead of treating these techniques in their greatest generality, they outline the key ideas and prove the results needed for developing the subsequent theory. Topics discussed in the book include the theory of viscosity solutions for nonlinear equa

  8. Fe{sub 3}Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO{sub 2} film technique

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Fukuda, Kenjiro; Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2011-10-03

    Ultrahigh density (> 10{sup 12} cm{sup -2}) Fe{sub 3}Si nanodots (NDs) are epitaxially grown on Si(111) substrates by codeposition of Fe and Si on the ultrathin SiO{sub 2} films with ultrahigh density nanovoids. We used two kinds of methods for epitaxial growth: molecular beam epitaxy (MBE) and solid phase epitaxy. For MBE, low temperature (< 300 deg. C) growth of the Fe{sub 3}Si NDs is needed to suppress the interdiffusion between Fe atoms deposited on the surfaces and Si atoms in the substrate. These epitaxial NDs exhibited the ferromagnetism at low temperatures, which were expected in terms of the application to the magnetic memory device materials.

  9. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-01-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

  10. Preparation of epitaxial yttrium-iron garnet micropatterns using metal-organic decomposition with electron-beam irradiation

    Science.gov (United States)

    Kasahara, Kenji; Manago, Takashi

    2017-11-01

    We have succeeded in obtaining epitaxial yttrium-iron garnet (YIG) micropatterns on a gadolinium-gallium garnet (GGG) substrate by a metal-organic decomposition method with electron-beam (EB) irradiation. We have demonstrated that metal-octylates of Y and Fe showed negative exposure behavior for EB irradiation. X-ray diffraction measurements indicated that the YIG micropatterns were epitaxially well grown on a GGG(111) substrate. The magnetization curve of the YIG micropatterns showed a clear hysteresis loop and the saturation magnetization was estimated to be approximately 100 emu/cm3, which is consistent with that of bulk YIG.

  11. Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

    International Nuclear Information System (INIS)

    McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

    1989-01-01

    This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

  12. Epitaxy of semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Krogstrup, P.; Ziino, N.L.B.; Chang, W.

    2015-01-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...... plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design...... of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires...

  13. MAGNET

    CERN Multimedia

    by B. Curé

    2011-01-01

    The magnet operation was very satisfactory till the technical stop at the end of the year 2010. The field was ramped down on 5th December 2010, following the successful regeneration test of the turbine filters at full field on 3rd December 2010. This will limit in the future the quantity of magnet cycles, as it is no longer necessary to ramp down the magnet for this type of intervention. This is made possible by the use of the spare liquid Helium volume to cool the magnet while turbines 1 and 2 are stopped, leaving only the third turbine in operation. This obviously requires full availability of the operators to supervise the operation, as it is not automated. The cryogenics was stopped on 6th December 2010 and the magnet was left without cooling until 18th January 2011, when the cryoplant operation resumed. The magnet temperature reached 93 K. The maintenance of the vacuum pumping was done immediately after the magnet stop, when the magnet was still at very low temperature. Only the vacuum pumping of the ma...

  14. Molecular beam epitaxy a short history

    CERN Document Server

    Orton, J W

    2015-01-01

    This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

  15. Fully electric waste collection

    CERN Document Server

    Anaïs Schaeffer

    2015-01-01

    Since 15 June, Transvoirie, which provides waste collection services throughout French-speaking Switzerland, has been using a fully electric lorry for its collections on the CERN site – a first for the region!   Featuring a motor powered by electric batteries that charge up when the brakes are used, the new lorry that roams the CERN site is as green as can be. And it’s not only the motor that’s electric: its waste compactor and lifting mechanism are also electrically powered*, making it the first 100% electric waste collection vehicle in French-speaking Switzerland. Considering that a total of 15.5 tonnes of household waste and paper/cardboard are collected each week from the Meyrin and Prévessin sites, the benefits for the environment are clear. This improvement comes as part of CERN’s contract with Transvoirie, which stipulates that the firm must propose ways of becoming more environmentally friendly (at no extra cost to CERN). *The was...

  16. Fully reflective photon sieve

    Science.gov (United States)

    Sun, Wenbo; Hu, Yongxiang; MacDonnell, David G.; Kim, Hyun Jung; Weimer, Carl; Baize, Rosemary R.

    2018-02-01

    Photon sieves (PS) have many applications and various designs in focusing light. However, a traditional PS only has a light transmissivity up to ∼25% and a focusing efficiency up to ∼7%, which hinder the application of them in many fields, especially for satellite remote sensing. To overcome these inherent drawbacks of traditional PSs, a concept of reflective photon sieve is developed in this work. This reflective photon sieve is based on a transparent membrane backed by a mirror. The transparent membrane is optimally a fully transparent material sheet with given refractive index and designed geometric thickness which has an optical thickness of a quarter incident wavelength (i.e. an anti-reflective coating). The PS-patterned pinholes are made on the transparent membrane. The design makes the light reflected from pinholes and that from zones of membrane material have 180° phase difference. Thus, light incident on this optical device is reflected and focused on its focal point. This device can have a reflectivity of ∼100% and a focusing efficiency of ∼50% based on numerical simulation. This device functions similar to a concave focusing mirror but can preserve the phase feature of light (such as that for the light with orbital angular momentum). It also has excellent wavelength-dependent property, which can exclude most of the undesired light from the focal point. A thin sheet of this component can perform the joint function of lenses and gratings/etalons in the optical path of a remote sensing system, thus is suitable for controling/filtering light in compact instruments such as satellite sensors. This concept is validated by the finite-difference time domain (FDTD) modeling and a lab prototype in this study.

  17. Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

    1991-10-01

    The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

  18. Magnetic Rare-Earth Superlattices

    DEFF Research Database (Denmark)

    Majkrzak, C.F.; Gibbs, D.; Böni, P.

    1988-01-01

    The magnetic structures of several single‐crystal, magnetic rare‐earth superlattice systems grown by molecular‐beam epitaxy are reviewed. In particular, the results of recent neutron diffraction investigations of long‐range magnetic order in Gd‐Y, Dy‐Y, Gd‐Dy, and Ho‐Y periodic superlattices...... mechanisms recently proposed to account for the magnetic states of these novel materials. © 1988 American Institute of Physics...

  19. MAGNET

    CERN Multimedia

    B. Curé

    2012-01-01

      Following the unexpected magnet stops last August due to sequences of unfortunate events on the services and cryogenics [see CMS internal report], a few more events and initiatives again disrupted the magnet operation. All the magnet parameters stayed at their nominal values during this period without any fault or alarm on the magnet control and safety systems. The magnet was stopped for the September technical stop to allow interventions in the experimental cavern on the detector services. On 1 October, to prepare the transfer of the liquid nitrogen tank on its new location, several control cables had to be removed. One cable was cut mistakenly, causing a digital input card to switch off, resulting in a cold-box (CB) stop. This tank is used for the pre-cooling of the magnet from room temperature down to 80 K, and for this reason it is controlled through the cryogenics control system. Since the connection of the CB was only allowed for a field below 2 T to avoid the risk of triggering a fast d...

  20. MAGNET

    CERN Multimedia

    B. Curé

    2012-01-01

      The magnet was energised at the beginning of March 2012 at a low current to check all the MSS safety chains. Then the magnet was ramped up to 3.8 T on 6 March 2012. Unfortunately two days later an unintentional switch OFF of the power converter caused a slow dump. This was due to a misunderstanding of the CCC (CERN Control Centre) concerning the procedure to apply for the CMS converter control according to the beam-mode status at that time. Following this event, the third one since 2009, a discussion was initiated to define possible improvement, not only on software and procedures in the CCC, but also to evaluate the possibility to upgrade the CMS hardware to prevent such discharge from occurring because of incorrect procedure implementations. The magnet operation itself was smooth, and no power cuts took place. As a result, the number of magnetic cycles was reduced to the minimum, with only two full magnetic cycles from 0 T to 3.8 T. Nevertheless the magnet suffered four stops of the cryogeni...

  1. MAGNET

    CERN Multimedia

    Benoit Curé

    2010-01-01

    Operation of the magnet has gone quite smoothly during the first half of this year. The magnet has been at 4.5K for the full period since January. There was an unplanned short stop due to the CERN-wide power outage on May 28th, which caused a slow dump of the magnet. Since this occurred just before a planned technical stop of the LHC, during which access in the experimental cavern was authorized, it was decided to leave the magnet OFF until 2nd June, when magnet was ramped up again to 3.8T. The magnet system experienced a fault also resulting in a slow dump on April 14th. This was triggered by a thermostat on a filter choke in the 20kA DC power converter. The threshold of this thermostat is 65°C. However, no variation in the water-cooling flow rate or temperature was observed. Vibration may have been the root cause of the fault. All the thermostats have been checked, together with the cables, connectors and the read out card. The tightening of the inductance fixations has also been checked. More tem...

  2. Magnetic rare earth superlattices

    DEFF Research Database (Denmark)

    Majkrzak, C.F.; Kwo, J.; Hong, M.

    1991-01-01

    Advances in molecular beam epitaxy deposition techniques have recently made it possible to grow, an atomic plane at a time, single crystalline superlattices composed of alternating layers of a magnetic rare earth, such as Gd, Dy, Ho, or Er, and metallic Y, which has an identical chemical structure...

  3. Conductivity of epitaxial and CVD graphene with correlated line defects

    DEFF Research Database (Denmark)

    Radchenko, T. M.; Shylau, Artsem; Zozoulenko, I. V.

    2014-01-01

    -type scattering potential. The dc conductivity is calculated numerically for different cases of distribution of line defects. This includes a random (uncorrelated) and a correlated distribution with a prevailing direction in the orientation of lines. The anisotropy of the conductivity along and across the line...... defects is revealed, which agrees with experimental measurements for epitaxial graphene grown on SiC. We performed a detailed study of the conductivity for different defect correlations, introducing the correlation angle αmax-the maximum possible angle between any two lines. We find that for a given...... electron density, the relative enhancement of the conductivity for the case of fully correlated line defects in comparison to the case of uncorrelatecl ones is larger for a higher defect density. Finally, we, for the first time, study the conductivity of realistic samples where both extended line defects...

  4. Spin transport in epitaxial graphene

    Science.gov (United States)

    Tbd, -

    2014-03-01

    Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

  5. MAGNET

    CERN Multimedia

    B. Curé

    2013-01-01

      The magnet was operated without any problem until the end of the LHC run in February 2013, apart from a CERN-wide power glitch on 10 January 2013 that affected the CMS refrigerator, causing a ramp down to 2 T in order to reconnect the coldbox. Another CERN-wide power glitch on 15 January 2013 didn’t affect the magnet subsystems, the cryoplant or the power converter. At the end of the magnet run, the reconnection of the coldbox at 2.5 T was tested. The process will be updated, in particular the parameters of some PID valve controllers. The helium flow of the current leads was reduced but only for a few seconds. The exercise will be repeated with the revised parameters to validate the automatic reconnection process of the coldbox. During LS1, the water-cooling services will be reduced and many interventions are planned on the electrical services. Therefore, the magnet cryogenics and subsystems will be stopped for several months, and the magnet cannot be kept cold. In order to avoid unc...

  6. MAGNET

    CERN Multimedia

    Benoit Curé

    2010-01-01

    The magnet was successfully operated at the end of the year 2009 despite some technical problems on the cryogenics. The magnet was ramped up to 3.8 T at the end of November until December 16th when the shutdown started. The magnet operation met a few unexpected stops. The field was reduced to 3.5 T for about 5 hours on December 3rd due to a faulty pressure sensor on the helium compressor. The following day the CERN CCC stopped unintentionally the power converters of the LHC and the experiments, triggering a ramp down that was stopped at 2.7 T. The magnet was back at 3.8 T about 6 hours after CCC sent the CERN-wide command. Three days later, a slow dump was triggered due to a stop of the pump feeding the power converter water-cooling circuit, during an intervention on the water-cooling plant done after several disturbances on the electrical distribution network. The magnet was back at 3.8 T in the evening the same day. On December 10th a break occurred in one turbine of the cold box producing the liquid ...

  7. MAGNET

    CERN Multimedia

    B. Curé

    2011-01-01

    The CMS magnet has been running steadily and smoothly since the summer, with no detected flaw. The magnet instrumentation is entirely operational and all the parameters are at their nominal values. Three power cuts on the electrical network affected the magnet run in the past five months, with no impact on the data-taking as the accelerator was also affected at the same time. On 22nd June, a thunderstorm caused a power glitch on the service electrical network. The primary water cooling at Point 5 was stopped. Despite a quick restart of the water cooling, the inlet temperature of the demineralised water on the busbar cooling circuit increased by 5 °C, up to 23.3 °C. It was kept below the threshold of 27 °C by switching off other cooling circuits to avoid the trigger of a slow dump of the magnet. The cold box of the cryogenics also stopped. Part of the spare liquid helium volume was used to maintain the cooling of the magnet at 4.5 K. The operators of the cryogenics quickly restarted ...

  8. MAGNET

    CERN Multimedia

    B. Curé

    2012-01-01

      The magnet and its sub-systems were stopped at the beginning of the winter shutdown on 8th December 2011. The magnet was left without cooling during the cryogenics maintenance until 17th January 2012, when the cryoplant operation resumed. The magnet temperature reached 93 K. The vacuum pumping was maintained during this period. During this shutdown, the yearly maintenance was performed on the cryogenics, the vacuum pumps, the magnet control and safety systems, and the power converter and discharge lines. Several preventive actions led to the replacement of the electrovalve command coils, and the 20A DC power supplies of the magnet control system. The filters were cleaned on the demineralised water circuits. The oil of the diffusion pumps was changed. On the cryogenics, warm nitrogen at 343 K was circulated in the cold box to regenerate the filters and the heat exchangers. The coalescing filters have been replaced at the inlet of both the turbines and the lubricant trapping unit. The active cha...

  9. The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

    International Nuclear Information System (INIS)

    Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

    2010-01-01

    A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

  10. Epitaxial Stabilization of the Perovskite Phase in (Sr(1-x)Ba(x))MnO3 Thin Films.

    Science.gov (United States)

    Langenberg, Eric; Guzmán, Roger; Maurel, Laura; Martínez de Baños, Lourdes; Morellón, Luis; Ibarra, M Ricardo; Herrero-Martín, Javier; Blasco, Javier; Magén, César; Algarabel, Pedro A; Pardo, José A

    2015-11-04

    A novel mechanism of ferroelectricity driven by off-centering magnetic Mn(4+) ions was proposed in (Sr1-xBax)MnO3, in its ideal perovskite phase, which yields enormous expectations in the search for strong magnetoelectric materials. Still, the desired perovskite phase has never been stabilized in thin films due to its extremely metastable character. Here, we report on a thorough study of the perovskite phase stabilization of (Sr1-xBax)MnO3 thin films, 0.2 ≤ x ≤ 0.5, grown by pulsed laser deposition onto (001)-oriented perovskite substrates. X-ray diffraction measurements and scanning transmission electron microscopy reveal that, under appropriate deposition conditions, the perovskite phase is fully stabilized over the nonferroelectric hexagonal phase, despite the latter being increasingly favored on increasing Ba-content. Moreover, we have managed to grow epitaxial coherent cube-on-cube (Sr1-xBax)MnO3 films upon strains ranging from 0% to 4%. Our results become a milestone in further studying perovskite (Sr1-xBax)MnO3 thin films and pave the way for tailoring ferroic and magnetoelectric properties either by strain engineering or Ba-doping.

  11. Comparison of the mid-infrared magneto-otical response of GaMnAs films grown by molecular beam epitaxy and ion implantation and pulsed laser melting

    Czech Academy of Sciences Publication Activity Database

    Acbas, G.; Sinova, J.; Scarpulla, M.A.; Dubon, O.D.; Cukr, Miroslav; Novák, Vít; Cerne, J.

    2007-01-01

    Roč. 20, - (2007), s. 457-460 ISSN 1557-1939 R&D Projects: GA ČR GA202/04/1519 Institutional research plan: CEZ:AV0Z10100521 Keywords : epitaxy * diluted magnetic semiconductors * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.425, year: 2007

  12. Concentration- and thickness-dependent magnetic properties of NixMn100−x in epitaxially grown NixMn100−x/Ni/(Co/)Cu3Au(001)

    International Nuclear Information System (INIS)

    Yaqoob Khan, M; Wu, Chii-Bin; Kreft, Stefanie K; Kuch, Wolfgang

    2013-01-01

    Magnetic proximity effects in single-crystalline Ni x Mn 100−x /Ni(/Co) bilayers on Cu 3 Au(001) are investigated for in-plane (IP) and out-of-plane (OoP) magnetization by means of the longitudinal and polar magneto-optical Kerr effect. Attention is paid to the influence on concentration- and thickness-dependent antiferromagnetic ordering (T AFM ) and blocking (T b ) temperatures as well as the exchange bias field (H eb ). For all the Ni x Mn 100−x films under study in contact with IP Ni, increasing T AFM is observed with decreasing Ni concentration from ∼50 to ∼20%, whereas only a slight change in T AFM is observed for the OoP case. Between ∼28% and ∼35% Ni concentration, a crossover temperature exists below which T AFM for the IP samples is higher than for the OoP samples and vice versa. T b is higher for the IP case than for OoP, except for an equi-atomic NiMn film, while H eb increases significantly for both magnetization directions with decreasing x. These results are attributed to: (i) a rotation of the non-collinear 3Q-like spin structure of Ni x Mn 100−x from the more-OoP to the more-IP direction for decreasing Ni concentration x, along with an associated increased magnetic anisotropy, and (ii) a smaller domain wall width within the Ni x Mn 100−x films at smaller x, leading to a smaller thickness required to establish exchange bias at a fixed temperature. (paper)

  13. Garnet scintillators of superior timing characteristics: material, engineering by liquid phase epitaxy

    Czech Academy of Sciences Publication Activity Database

    Průša, Petr; Kučera, M.; Babin, Vladimir; Brůža, P.; Pánek, D.; Beitlerová, Alena; Mareš, Jiří A.; Hanuš, M.; Lučeničová, Z.; Nikl, Martin; Parkman, T.

    2017-01-01

    Roč. 5, č. 6 (2017), s. 1-9, č. článku 1600875. ISSN 2195-1071 R&D Projects: GA ČR GA16-15569S Institutional support: RVO:68378271 Keywords : Ce * liquid phase epitaxy * Mg co-doping * multicomponent garnets * scintillators Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 6.875, year: 2016

  14. Ab initio study of Co and Ni under uniaxial and biaxial loading and in epitaxial overlayers

    Czech Academy of Sciences Publication Activity Database

    Zelený, Martin; Legut, Dominik; Šob, Mojmír

    2008-01-01

    Roč. 78, č. 22 (2008), 224105/1-224105/11 ISSN 1098-0121 R&D Projects: GA ČR GD106/05/H008; GA AV ČR IAA1041302; GA MŠk OC 147 Institutional research plan: CEZ:AV0Z20410507 Keywords : ab initio calculations * epitaxial overlayers * uniaxial and biaxial loading Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

  15. MAGNET

    CERN Multimedia

    B. Curé

    2011-01-01

    The magnet ran smoothly in the last few months until a fast dump occurred on 9th May 2011. Fortunately, this occurred in the afternoon of the first day of the technical stop. The fast dump was due to a valve position controller that caused the sudden closure of a valve. This valve is used to regulate the helium flow on one of the two current leads, which electrically connects the coil at 4.5 K to the busbars at room temperature. With no helium flow on the lead, the voltage drop and the temperatures across the leads increase up to the defined thresholds, triggering a fast dump through the Magnet Safety System (MSS). The automatic reaction triggered by the MSS worked properly. The helium release was limited as the pressure rise was just at the limit of the safety valve opening pressure. The average temperature of the magnet reached 72 K. It took four days to recover the temperature and refill the helium volumes. The faulty valve controller was replaced by a spare one before the magnet ramp-up resumed....

  16. Materials fundamentals of molecular beam epitaxy

    CERN Document Server

    Tsao, Jeffrey Y

    1992-01-01

    The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy * Thorough enough to benefit molecular beam epitaxy researchers * Broad enough to benefit materials, surface, and device researchers * Referenes articles at the forefront of modern research as well as those of historical interest.

  17. Short-pulse chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Suian; Cui, Jie; Aoyagi, Yoshinobu (RIKEN, The Institute of Physical and Chemical Research, Saitama (Japan)); Tanaka, Akihiko (Bentec Co., Tokyo (Japan))

    1994-03-10

    Short-pulse chemical beam epitaxy has been proposed and studied. The short pulses with supersonic characteristics and a width of milliseconds were generated by high speed valves and the related pumping lines on a purpose-built CBE system. Using a time-of-fight technique, we verified the dependence of pulse properties on the source pressures and the valve on-time. The results indicate that modulation of molecular kinetic energy and accurate control of molecule supply were obtained. GaAs epitaxial growth with use of trimethylgallium pulses was carried out and investigated by means of RHEED (reflection high-energy electron diffraction) observation. It was demonstrated that the newly developed short-pulse chemical beam epitaxy has the advantage of high controllability

  18. Soft Crystals in Flatland: Unraveling Epitaxial Growth.

    Science.gov (United States)

    Ward, Michael D

    2016-07-26

    Thin film epitaxy typically invokes a superposition of a pair of rigid two-dimensional lattices with a well-defined orientation governed by some form of commensurism. A report by Meissner et al. in this issue of ACS Nano demonstrates that the organization of organic molecules on substrates may not be that simple, as static distortion waves involving miniscule shifts of atomic positions from substrate lattice points can lead to orientations of a molecular film that cannot be described by often used models. Herein, we provide some highlights of epitaxy, with a focus on configurations that reflect the delicate balance between intermolecular interactions within a molecular film and molecule-substrate interactions. Although geometric models for explaining and predicting epitaxial configurations can be used to guide synthesis of materials, their use must recognize energetic factors and the possibility of more complex, and possibly less predictable, interface structures.

  19. Interfacial, electrical, and spin-injection properties of epitaxial Co2MnGa grown on GaAs(100)

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Hickey, M. C.; Holmes, S. N.

    2009-01-01

    The interfacial, electrical, and magnetic properties of the Heusler alloy Co2MnGa grown epitaxially on GaAs(100) are presented with an emphasis on the use of this metal-semiconductor combination for a device that operates on the principles of spin-injection between the two materials. Through...... systematic growth optimization the stoichiometry in the bulk Co2MnGa can be controlled to better than ±2%, although the interface is disordered and limits the spin-injection efficiency in a practical spintronic device irrespective of the half-metallic nature of the bulk metal. Molecular beam epitaxial growth...

  20. Transformation behaviour of freestanding epitaxial Ni–Mn–Ga films

    Energy Technology Data Exchange (ETDEWEB)

    Yeduru, S.R., E-mail: srinivasa.yeduru@kit.edu [Karlsruhe Institute of Technology, IMT, P.O. Box 3640, 76021 Karlsruhe (Germany); Backen, A.; Fähler, S.; Schultz, L. [IFW Dresden, P.O. Box 270116, 01171 Dresden (Germany); Kohl, M., E-mail: manfred.kohl@kit.edu [Karlsruhe Institute of Technology, IMT, P.O. Box 3640, 76021 Karlsruhe (Germany)

    2013-11-15

    Highlights: ► The complex martensite microstructure of free-standing epitaxial Ni–Mn–Ga films. ► A two-stage transformation in the temperature range between 40 °C and 160 °C. ► Temperature dependent mechanical properties of free-standing Ni–Mn–Ga films. ► With increasing temperature, the twinning stress decreases due to thermal activation of twin boundaries. ► Large superplastic strain increases from about 10% at 110 °C to 14% at RT. -- Abstract: We analyze the transformation behaviour of a 2 μm thick epitaxial Ni–Mn–Ga film by combining temperature dependent measurements of magnetization, electrical resistance, X-ray diffraction (XRD) and tensile stress–strain characteristics. While the magnetization measurements hint for a simple austenite–martensite transformation below the Curie temperature at about 90 °C, resistivity measurements reveal a two-stage transformation in the temperature regimes (I) of 40–80 °C and (II) of 140–160 °C. XRD and pseudoplastic behaviour prove the presence of martensite well above the Curie point. The combination of four independent methods suggests that the transformation at (II) may originate from a weakly first order transformation followed by an intermartensitic transformation at (I). This interpretation is in line with the large superplastic strain observed for the tensile direction parallel to the [1 0 0] direction of the Ni–Mn–Ga unit cell. The strain increases from about 10% at 110 °C to 14% at room temperature suggesting an increase in tetragonal distortion.

  1. MAGNET

    CERN Multimedia

    B. Curé

    MAGNET During the winter shutdown, the magnet subsystems went through a full maintenance. The magnet was successfully warmed up to room temperature beginning of December 2008. The vacuum was broken later on by injecting nitrogen at a pressure just above one atmosphere inside the vacuum tank. This was necessary both to prevent any accidental humidity ingress, and to allow for a modification of the vacuum gauges on the vacuum tank and maintenance of the diffusion pumps. The vacuum gauges had to be changed, because of erratic variations on the measurements, causing spurious alarms. The new type of vacuum gauges has been used in similar conditions on the other LHC experiments and without problems. They are shielded against the stray field. The lubricants of the primary and diffusion pumps have been changed. Several minor modifications were also carried out on the equipment in the service cavern, with the aim to ease the maintenance and to allow possible intervention during operation. Spare sensors have been bough...

  2. MAGNET

    CERN Multimedia

    Benoit Curé.

    The magnet operation restarted end of June this year. Quick routine checks of the magnet sub-systems were performed at low current before starting the ramps up to higher field. It appeared clearly that the end of the field ramp down to zero was too long to be compatible with the detector commissioning and operations plans. It was decided to perform an upgrade to keep the ramp down from 3.8T to zero within 4 hours. On July 10th, when a field of 1.5T was reached, small movements were observed in the forward region support table and it was decided to fix this problem before going to higher field. At the end of July the ramps could be resumed. On July 28th, the field was at 3.8T and the summer CRAFT exercise could start. This run in August went smoothly until a general CERN wide power cut took place on August 3rd, due to an insulation fault on the high voltage network outside point 5. It affected the magnet powering electrical circuit, as it caused the opening of the main circuit breakers, resulting in a fast du...

  3. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  4. Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene.

    Science.gov (United States)

    Fernández-Garrido, Sergio; Ramsteiner, Manfred; Gao, Guanhui; Galves, Lauren A; Sharma, Bharat; Corfdir, Pierre; Calabrese, Gabriele; de Souza Schiaber, Ziani; Pfüller, Carsten; Trampert, Achim; Lopes, João Marcelo J; Brandt, Oliver; Geelhaar, Lutz

    2017-09-13

    We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N exposure, the direct growth of GaN nanowires on graphene is only achieved on multilayer graphene structures. The analysis of the nanowire ensembles prepared on multilayer graphene by Raman spectroscopy and transmission electron microscopy reveals the presence of graphene underneath as well as in between nanowires, as desired for the use of this material as contact layer in nanowire-based devices. The nanowires nucleate preferentially at step edges, are vertical, well aligned, epitaxial, and of comparable structural quality as similar structures fabricated on conventional substrates.

  5. All epitaxial silicon diode heavy ion detector

    International Nuclear Information System (INIS)

    Gruhn, C.R.; Goldstone, P.D.; Jarmie, N.

    1976-01-01

    An all epitaxial silicon diode (ESD) heavy ion detector has been designed, fabricated, and tested. The active area of the detector is 5 cm 2 and has a total thickness of 50 μ. The response of the detector has been studied with fission fragments, alpha particles, oxygen ions, and sulfur ions. A number of advantages in terms of both fabrication and performance are discussed

  6. CeCo5 thin films with perpendicular anisotropy grown by molecular beam epitaxy

    Science.gov (United States)

    Sharma, S.; Hildebrandt, E.; Major, M.; Komissinskiy, P.; Radulov, I.; Alff, L.

    2018-04-01

    Buffer-free, highly textured (0 0 1) oriented CeCo5 thin films showing perpendicular magnetic anisotropy were synthesized on (0 0 1) Al2O3 substrates by molecular beam epitaxy. Ce exists in a mixture of Ce3+ and Ce4+ valence states as shown by X-ray photoelectron spectroscopy. The first anisotropy constant, K1, as measured by torque magnetometry was 0.82 MJ/m3 (8.2 ×106erg /cm3) . A maximum coercivity of 5.16 kOe with a negative temperature coefficient of -0.304%K-1 and a magnetization of 527.30 emu/cm3 was measured perpendicular to the film plane at 5 K. In addition, a large anisotropy of the magnetic moment of 15.5% was observed. These magnetic parameters make CeCo5 a potential candidate material for spintronic and magnetic recording applications.

  7. MAGNET

    CERN Multimedia

    Benoit Curé

    The magnet subsystems resumed operation early this spring. The vacuum pumping was restarted mid March, and the cryogenic power plant was restarted on March 30th. Three and a half weeks later, the magnet was at 4.5 K. The vacuum pumping system is performing well. One of the newly installed vacuum gauges had to be replaced at the end of the cool-down phase, as the values indicated were not coherent with the other pressure measurements. The correction had to be implemented quickly to be sure no helium leak could be at the origin of this anomaly. The pressure measurements have been stable and coherent since the change. The cryogenics worked well, and the cool-down went quite smoothly, without any particular difficulty. The automated start of the turbines had to be fine-tuned to get a smooth transition, as it was observed that the cooling power delivered by the turbines was slightly higher than needed, causing the cold box to stop automatically. This had no consequence as the cold box safety system acts to keep ...

  8. MAGNET

    CERN Multimedia

    B. Curé

    During the winter shutdown, the magnet subsystems went through a full maintenance. The magnet was successfully warmed up to room temperature beginning of December 2008. The vacuum was broken later on by injecting nitrogen at a pressure just above one atmosphere inside the vacuum tank. This was necessary both to prevent any accidental humidity ingress, and to allow for a modification of the vacuum gauges on the vacuum tank and maintenance of the diffusion pumps. The vacuum gauges had to be changed, because of erratic variations on the measurements, causing spurious alarms. The new type of vacuum gauges has been used in similar conditions on the other LHC experiments and without problems. They are shielded against the stray field. The lubricants of the primary and diffusion pumps have been changed. Several minor modifications were also carried out on the equipment in the service cavern, with the aim to ease the maintenance and to allow possible intervention during operation. Spare sensors have been bought. Th...

  9. The first LHC sector is fully interconnected

    CERN Multimedia

    2006-01-01

    Sector 7-8 is the first sector of the LHC to become fully operational. All the magnets, cryogenic line, vacuum chambers and services are interconnected. The cool down of this sector can soon commence. LHC project leader Lyn Evans, the teams from CERN's AT/MCS, AT/VAC and AT/MEL groups, and the members of the IEG consortium celebrate the completion of the first LHC sector. The 10th of November was a red letter day for the LHC accelerator teams, marking the completion of the first sector of the machine. The magnets of sector 7-8, together with the cryogenic line, the vacuum chambers and the distribution feedboxes (DFBs) are now all completely interconnected. Sector 7-8 has thus been closed and is the first LHC sector to become operational. The interconnection work required several thousand electrical, cryogenic and insulating connections to be made on the 210 interfaces between the magnets in the arc, the 30 interfaces between the special magnets and the interfaces with the cryogenic line. 'This represent...

  10. Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

    Energy Technology Data Exchange (ETDEWEB)

    Schleicher, B., E-mail: b.schleicher@ifw-dresden.de; Niemann, R.; Schultz, L.; Fähler, S. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany); TU Dresden, Institute for Solid State Physics, D-01062 Dresden (Germany); Diestel, A.; Hühne, R. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)

    2015-08-07

    Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg{sub 1/3}Nb{sub 2/3}){sub 0.72}Ti{sub 0.28}O{sub 3} substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth and martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.

  11. The Interfacial Thermal Conductance of Epitaxial Metal-Semiconductor Interfaces

    Science.gov (United States)

    Ye, Ning

    Understanding heat transport at nanometer and sub-nanometer lengthscales is critical to solving a wide range of technological challenges related to thermal management and energy conversion. In particular, finite Interfacial Thermal Conductance (ITC) often dominates transport whenever multiple interfaces are closely spaced together or when heat originates from sources that are highly confined by interfaces. Examples of the former include superlattices, thin films, quantum cascade lasers, and high density nanocomposites. Examples of the latter include FinFET transistors, phase-change memory, and the plasmonic transducer of a heat-assisted magnetic recording head. An understanding of the physics of such interfaces is still lacking, in part because experimental investigations to-date have not bothered to carefully control the structure of interfaces studied, and also because the most advanced theories have not been compared to the most robust experimental data. This thesis aims to resolve this by investigating ITC between a range of clean and structurally well-characterized metal-semiconductor interfaces using the Time-Domain Thermoreflectance (TDTR) experimental technique, and by providing theoretical/computational comparisons to the experimental data where possible. By studying the interfaces between a variety of materials systems, each with unique aspects to their tunability, I have been able to answer a number of outstanding questions regarding the importance of interfacial quality (epitaxial/non-epitaxial interfaces), semiconductor doping, matching of acoustic and optical phonon band structure, and the role of phonon transport mechanisms apart from direct elastic transmission on ITC. In particular, we are able to comment on the suitability of the diffuse mismatch model (DMM) to describe the transport across epitaxial interfaces. To accomplish this goal, I studied interfacial thermal transport across CoSi2, TiSi2, NiSi and PtSi - Si(100) and Si(111), (silicides

  12. Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Zhenghe; Kim, Ki Wook [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nori, Sudhakar; Lee, Yi-Fang; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kumar, D. [Department of Mechanical Engineering, North Carolina A & T State University, Greensboro, North Carolina 27411 (United States); Wu, Fan [Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08540 (United States); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2015-10-28

    We report on the epitaxial growth and room-temperature ferromagnetic properties of MgO thin films deposited on hexagonal c-sapphire substrates by pulsed laser deposition. The epitaxial nature of the films has been confirmed by both θ-2θ and φ-scans of X-ray diffraction pattern. Even though bulk MgO is a nonmagnetic insulator, we have found that the MgO films exhibit ferromagnetism and hysteresis loops yielding a maximum saturation magnetization up to 17 emu/cc and large coercivity, H{sub c} = 1200 Oe. We have also found that the saturation magnetization gets enhanced and that the crystallization degraded with decreased growth temperature, suggesting that the origin of our magnetic coupling could be point defects manifested by the strain in the films. X-ray (θ-2θ) diffraction peak shift and strain analysis clearly support the presence of strain in films resulting from the presence of point defects. Based on careful investigations using secondary ion mass spectrometer and X-ray photoelectron spectroscopy studies, we have ruled out the possibility of the presence of any external magnetic impurities. We discuss the critical role of microstructural characteristics and associated strain on the physical properties of the MgO films and establish a correlation between defects and magnetic properties.

  13. Molecular beam epitaxy of insulators, metastable phases and II-VI compounds

    International Nuclear Information System (INIS)

    Farrow, R.F.C.

    1988-01-01

    MBE techniques are emerging for epitaxial growth of a wide range of other materials which are of key importance in electronics, optoelectronics and even magnetics. These include insulators, metals and II-VI compound semiconductors. The factors which control the range of materials which can be prepared by MBE techniques are discussed. The growth and characterization of CaF 2 /Si is reviewed. Developments in the epitaxial stabilization of the 3d transition metals Mn, Fe, Co and Ni are discussed. A recent study of the MBE growth of high-perfection films of CdTe on InSb substrates is used as an illustration of how such films can be prepared and their properties related to the growth conditions. 162 refs.; 25 figs.; 5 tabs

  14. Realization of epitaxial barium ferrite films of high crystalline quality with small resonance losses

    Science.gov (United States)

    Shinde, S. R.; Lofland, S. E.; Ganpule, C. S.; Ogale, S. B.; Bhagat, S. M.; Venkatesan, T.; Ramesh, R.

    1999-05-01

    We report the results of systematic studies of the effect of thin film deposition conditions, such as deposition temperature, oxygen pressure during deposition, etc., on the microstructural, magnetic, and microwave properties of pulsed laser deposited epitaxial thin films of barium ferrite on single crystal sapphire substrates. Ferromagnetic resonance (FMR) linewidths are very sensitive to the presence of defects and inhomogeneities and therefore change markedly with the variation of deposition parameters. After careful optimization of the deposition conditions, relatively narrow resonance lines were realized in these films. For further improvement in the film quality, these films were annealed at elevated temperatures in flowing oxygen. As a result of the high degree of epitaxy, good stoichiometry, and reduced concentration of defects, FMR linewidths as small as 37 Oe were obtained in films deposited at 920 °C and subsequently annealed at 1000 °C in an oxygen atmosphere.

  15. Squid measurement of the Verwey transition on epitaxial (1 0 0) magnetite thin films

    International Nuclear Information System (INIS)

    Dediu, V.; Arisi, E.; Bergenti, I.; Riminucci, A.; Solzi, M.; Pernechele, C.; Natali, M.

    2007-01-01

    We report results on epitaxial magnetite (Fe 3 O 4 ) thin films grown by electron beam ablation on (1 0 0) MgAl 2 O 4 substrates. At 120 K magnetite undergoes a structural and electronic transition, the so-called Verwey transition, at which magnetic and conducting properties of the material change. We observed the Verwey transition on epitaxial films with a thickness of 50 nm by comparing zero-field cooling (ZFC) and field cooling (FC) curves measured with a superconducting quantum interference device (SQUID) magnetometer. Observation of the Verwey transition by SQUID measurements in the films is sign of their high crystalline quality. Room temperature ferromagnetism has also been found by magneto-optical Kerr rotation (MOKE) and confirmed by SQUID measurements, with a hysteresis loop showing a coercive field of hundreds of Oe

  16. MAGNET

    CERN Multimedia

    Benoit Curé

    The cooling down to the nominal temperature of 4.5 K was achieved at the beginning of August, in conjunction with the completion of the installation work of the connection between the power lines and the coil current leads. The temperature gradient on the first exchanger of the cold box is now kept within the nominal range. A leak of lubricant on a gasket of the helium compressor station installed at the surface was observed and several corrective actions were necessary to bring the situation back to normal. The compressor had to be refilled with lubricant and a regeneration of the filters and adsorbers was necessary. The coil cool down was resumed successfully, and the cryogenics is running since then with all parameters being nominal. Preliminary tests of the 20kA coil power supply were done earlier at full current through the discharge lines into the dump resistors, and with the powering busbars from USC5 to UXC5 without the magnet connected. On Monday evening August 25th, at 8pm, the final commissionin...

  17. MAGNET

    CERN Multimedia

    Benoit Curé

    2013-01-01

    Maintenance work and consolidation activities on the magnet cryogenics and its power distribution are progressing according to the schedules. The manufacturing of the two new helium compressor frame units has started. The frame units support the valves, all the sensors and the compressors with their motors. This activity is subcontracted. The final installation and the commissioning at CERN are scheduled for March–April 2014. The overhauls of existing cryogenics equipment (compressors, motors) are in progress. The reassembly of the components shall start in early 2014. The helium drier, to be installed on the high-pressure helium piping, has been ordered and will be delivered in the first trimester of 2014. The power distribution for the helium compressors in SH5 on the 3.3kV network is progressing. The 3.3kV switches, between each compressor and its hot spare compressor, are being installed, together with the power cables for the new compressors. The 3.3kV electrical switchboards in SE5 will ...

  18. Effect of natural homointerfaces on the magnetic properties of pseudomorphic La0.7Sr0.3MnO3 thin film: Phase separation vs split domain structure

    International Nuclear Information System (INIS)

    Congiu, Francesco; Sanna, Carla; Maritato, Luigi; Orgiani, Pasquale; Geddo Lehmann, Alessandra

    2016-01-01

    We studied the effect of naturally formed homointerfaces on the magnetic and electric transport behavior of a heavily twinned, 40 nm thick, pseudomorphic epitaxial film of La 0.7 Sr 0.3 MnO 3 deposited by molecular beam epitaxy on ferroelastic LaAlO 3 (001) substrate. As proved by high resolution X-ray diffraction analysis, the lamellar twin structure of the substrate is imprinted in La 0.7 Sr 0.3 MnO 3 . In spite of the pronounced thermomagnetic irreversibility in the DC low field magnetization, spin-glass-like character, possibly related to the structural complexity, was ruled out, on the base of AC susceptibility results. The magnetic characterization indicates anisotropic ferromagnetism, with a saturation magnetization M s = 3.2 μ B /Mn, slightly reduced with respect to the fully polarized value of 3.7 μ B /Mn. The low field DC magnetization vs temperature is non bulklike, with a two step increase in the field cooled M FC (T) branch and a two peak structure in the zero field cooled M ZFC (T) one. Correspondingly, two peaks are present in the resistivity vs temperature ρ(T) curve. With reference to the behavior of epitaxial manganites deposited on bicrystal substrates, results are discussed in terms of a two phase model, in which each couple of adjacent ferromagnetic twin cores, with bulklike T C = 370 K, is separated by a twin boundary with lower Curie point T C = 150 K, acting as barrier for spin polarized transport. The two phase scenario is compared with the alternative one based on a single ferromagnetic phase with the peculiar ferromagnetic domains structure inherent to twinned manganites films, reported to be split into interconnected and spatially separated regions with in-plane and out-of-plane magnetization, coinciding with twin cores and twin boundaries respectively.

  19. Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    D' Costa, Vijay Richard, E-mail: vdcosta@asu.edu; Wang, Wei; Yeo, Yee-Chia, E-mail: eleyeoyc@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

    2016-08-14

    We investigated the compositional dependence of the near-bandgap dielectric function and the E{sub 0} critical point in pseudomorphic Ge{sub 1-x}Sn{sub x} alloys grown on Ge (100) substrate by molecular beam epitaxy. The complex dielectric functions were obtained using spectroscopic ellipsometry from 0.5 to 4.5 eV at room temperature. Analogous to the E{sub 1} and E{sub 1}+Δ{sub 1} transitions, a model consisting of the compositional dependence of relaxed alloys along with the strain contribution predicted by the deformation potential theory fully accounts for the observed compositional dependence in pseudomorphic alloys.

  20. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

    Science.gov (United States)

    Fafard, S.; York, M. C. A.; Proulx, F.; Valdivia, C. E.; Wilkins, M. M.; Arès, R.; Aimez, V.; Hinzer, K.; Masson, D. P.

    2016-02-01

    Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ˜1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

  1. An epitaxial ferroelectric tunnel junction on silicon.

    Science.gov (United States)

    Li, Zhipeng; Guo, Xiao; Lu, Hui-Bin; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang

    2014-11-12

    Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Epitaxy of II-VI compounds

    International Nuclear Information System (INIS)

    Gentile, A.L.

    1988-01-01

    A complete picture of the technology that includes selection, growth and preparation of substrate crystals, defect chemistry, techniques of epitaxial growth, and some of the methods available for characterization of the products is presented, as well as some of the fundamental problems involved in the growth and processing of a compound semiconductor composed of two elements with significant vapor pressures. 43 refs, 14 figs, 1 tab

  3. Selective epitaxy using the gild process

    Science.gov (United States)

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  4. Epitaxial nucleation and growth of molecular films

    Science.gov (United States)

    Hooks, Daniel Edwin

    2000-10-01

    The last decade has witnessed an increased emphasis on the design and use of molecular-based materials, commonly in thin film form, as components in electronic devices, sensors, displays, and logic elements. The growing interest in films based on molecular components, rather than their more traditional inorganic counterparts, stems largely from the premise that collective optical and electronic properties can be systematically manipulated through molecular design. Many of these properties depend strongly upon film structure and orientation with respect to the substrate upon which they are deposited. This relationship mandates careful attention to the interface between the primary molecular overlayer and the substrate. Further advances in molecular films and multilayer composites based on molecular films require improved understanding of the role of epitaxy in molecular organization as well as the nucleation events that precede film formation. Determination of critical nucleus dimensions and elucidation of the factors that govern critical size are particularly important for fabricating nanoscale molecular features and controlling domain defects in contiguous molecular films. This thesis describes an examination of the role of epitaxy in the growth of molecular films, including a hierarchical classification and grammar of molecular epitaxy, an atomic force microscopy (AFM) investigation of the intercalation of molecular components into multilayer organic-inorganic composites, and an AFM investigation of the nucleation of molecular films.

  5. Synchrotron radiation excited silicon epitaxy using disilane

    International Nuclear Information System (INIS)

    Akazawa, Housei; Utsumi, Yuichi

    1995-01-01

    Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

  6. Study of strain-modulated effects on CoFe2O4 epitaxial films

    Science.gov (United States)

    Chen, Yi-Chun; Liou, Yi-De; Wu, Kun-Hong; Wang, Chih-Kuo; Chu, Ying-Hao

    Due to the improvement of thin film growth technique, epitaxial films directly grown on flexible substrates became possible recently. These kinds of flexible systems not only have the advantage of easy integration for device applications, but also provide a template to purify strain effects for physical mechanism study. Here, we investigate the evolution of the spinel CoFe2O4 (CFO) epitaxial film on a muscovite substrate with variable curvatures. CFO possesses superior magnetic properties with high Curie temperature and large magnetostrictive anisotropy. The CFO film on muscovite is (111) oriented, corresponding to a magnetic hard-axis along the out-of-plane direction. Under the in-plane asymmetric strain, based on the frequency shift of Raman A1g phonon, the unit cell volume of CFO increases with the tensile strain while decreases with the compressive strain. The tunable volume ratio is about 0.7 %. The A1g and T2g phonon evolutions also show the Co/Fe cation migration temperature decreases both under tensile and compressive strain with the degradation up to 40 K. Moreover, when out-of-plane magnetic field is applied, the magnetostriction constant increases with the compressive strain, which implies the tunable orientation of magnetic easy axis in this flexible system.

  7. Zinc-induced lattice contraction in metalorganic vapor phase epitaxy grown AlGaInP

    International Nuclear Information System (INIS)

    Li, Xinyi; Zhang, Jianqin; Zhang, Wei; Lu, Hongbo; Zhou, Dayong

    2015-01-01

    p-Type Zn doped (Al x Ga 1-x ) 0.5 In 0.5 P layers have been grown on (001) GaAs substrates by metalorganic vapor phase epitaxy. The lattice constants have been carefully measured by X-ray double crystal diffraction. Mismatches between the substrates and epitaxial layers are observed in the direction corresponding to lattice contraction. The variation of fully-relaxed lattice constants calculated from symmetric (004) and asymmetric (115) diffraction shows that the contraction is related to both increasing inlet dopant flows and increasing growth temperatures. Secondary ion mass spectrometry is employed to analyze the elements in the epitaxial layers. The variations of Al, Ga, In and Zn components indicate that a decrease of In incorporation during the growth leads to the contracted lattice, although Zn atoms, which incorporate into the sites of In atoms during the doping, are smaller in covalent radius. The decrease is supposed to be caused by the competition between In and Zn atoms on the growth surface, which is well fit by the surface adsorption-trapping model. In addition, the suppression of Al and Ga incorporation by inlet dopant flows is observed. The possible cause might be the ethane generated by the pyrolysis of dopant source, which impedes the decomposition process of metalorganic sources of Al and Ga atoms. - Highlights: • AlGaInP layers are grown by metalorganic vapor phase epitaxy. • Zn induced lattice contraction in AlGaInP layers is observed. • Diethylzinc flow causes the contraction by impeding the incorporation of In. • The suppression of metalorganic decomposition by diethylzinc is noticed.

  8. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ferralis, Nicola, E-mail: ferralis@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Carraro, Carlo [Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720 (United States)

    2014-11-30

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm{sup −1} corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching.

  9. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    International Nuclear Information System (INIS)

    Ferralis, Nicola; Carraro, Carlo

    2014-01-01

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm −1 corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching

  10. Physics of fully ionized regions

    International Nuclear Information System (INIS)

    Flower, D.

    1975-01-01

    In this paper the term fully ionised regions is taken to embrace both planetary nebulae and the so-called 'H II' regions referred to as H + regions. Whilst these two types of gaseous nebulae are very different from an evolutionary standpoint, they are physically very similar, being characterised by photoionisation of a low-density plasma by a hot star. (Auth.)

  11. Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

    1987-09-01

    We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are ∼4% expanded uniformly in-plane (0001), and ∼9% and ∼4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs

  12. Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

    Science.gov (United States)

    Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

    2008-07-11

    Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

  13. Luminescence and scintillation properties of liquid phase epitaxy grown Y.sub.2./sub.SiO.sub.5./sub.:Ce single crystalline films

    Czech Academy of Sciences Publication Activity Database

    Wantong, K.; Yawai, N.; Chewpraditkul, W.; Kučera, M.; Hanus, M.; Nikl, Martin

    2017-01-01

    Roč. 468, Jun (2017), s. 275-277 ISSN 0022-0248 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : luminescence * liquid phase epitaxy * Ce doping * Y 2 SiO 5 :Ce * scintillator materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.751, year: 2016

  14. Optical properties of epitaxial relaxor ferroelectric PbSc.sub.0.5./sub.Nb.sub.0.5./sub.O.sub.3./sub. films

    Czech Academy of Sciences Publication Activity Database

    Lynnyková, Anna; Chvostová, Dagmar; Pacherová, Oliva; Kocourek, Tomáš; Jelínek, Miroslav; Dejneka, Alexandr; Tyunina, Marina

    2013-01-01

    Roč. 103, č. 13 (2013), "13290-1"-"132901-4" ISSN 0003-6951 R&D Projects: GA ČR GAP108/12/1941 Institutional support: RVO:68378271 Keywords : relaxor * ferroelectric * epitaxial films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.515, year: 2013 http://dx.doi.org/10.1063/1.4822108

  15. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman, E-mail: rue2@psu.edu [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-07-25

    The synthesis of a 50 unit cell thick n = 4 Sr{sub n+1}Ti{sub n}O{sub 3n+1} (Sr{sub 5}Ti{sub 4}O{sub 13}) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO{sub 2} layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO{sub 2} layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO{sub 3} perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  16. Magnetic Resonance Parkinsonism Index: diagnostic accuracy of a fully automated algorithm in comparison with the manual measurement in a large Italian multicentre study in patients with progressive supranuclear palsy

    Energy Technology Data Exchange (ETDEWEB)

    Nigro, Salvatore [National Research Council, Institute of Bioimaging and Molecular Physiology, Catanzaro (Italy); Arabia, Gennarina [University ' ' Magna Graecia' ' , Institute of Neurology, Department of Medical and Surgical Sciences, Catanzaro (Italy); Antonini, Angelo; Weis, Luca; Marcante, Andrea [' ' Fondazione Ospedale San Camillo' ' - I.R.C.C.S, Parkinson' s Disease and Movement Disorders Unit, Venice-Lido (Italy); Tessitore, Alessandro; Cirillo, Mario; Tedeschi, Gioacchino [Second University of Naples, Department of Medical, Surgical, Neurological, Metabolic and Aging Sciences, Naples (Italy); Second University of Naples, MRI Research Center SUN-FISM, Naples (Italy); Zanigni, Stefano; Tonon, Caterina [Policlinico S. Orsola - Malpighi, Functional MR Unit, Bologna (Italy); University of Bologna, Department of Biomedical and Neuromotor Sciences, Bologna (Italy); Calandra-Buonaura, Giovanna [University of Bologna, Department of Biomedical and Neuromotor Sciences, Bologna (Italy); IRCCS Istituto delle Scienze Neurologiche di Bologna, Bologna (Italy); Pezzoli, Gianni; Cilia, Roberto [ASST G.Pini - CTO, ex ICP, Parkinson Institute, Milano (Italy); Zappia, Mario; Nicoletti, Alessandra; Cicero, Calogero Edoardo [University of Catania, Department ' ' G.F. Ingrassia' ' , Section of Neurosciences, Catania (Italy); Tinazzi, Michele; Tocco, Pierluigi [University Hospital of Verona, Department of Neurological and Movement Sciences, Verona (Italy); Cardobi, Nicolo [University Hospital of Verona, Institute of Radiology, Verona (Italy); Quattrone, Aldo [National Research Council, Institute of Bioimaging and Molecular Physiology, Catanzaro (Italy); University ' ' Magna Graecia' ' , Institute of Neurology, Department of Medical and Surgical Sciences, Catanzaro (Italy)

    2017-06-15

    To investigate the reliability of a new in-house automatic algorithm for calculating the Magnetic Resonance Parkinsonism Index (MRPI), in a large multicentre study population of patients affected by progressive supranuclear palsy (PSP) or Parkinson's disease (PD), and healthy controls (HC), and to compare the diagnostic accuracy of the automatic and manual MRPI values. The study included 88 PSP patients, 234 PD patients and 117 controls. MRI was performed using both 3T and 1.5T scanners. Automatic and manual MRPI values were evaluated, and accuracy of both methods in distinguishing PSP from PD and controls was calculated. No statistical differences were found between automated and manual MRPI values in all groups. The automatic MRPI values differentiated PSP from PD with an accuracy of 95 % (manual MRPI accuracy 96 %) and 97 % (manual MRPI accuracy 100 %) for 1.5T and 3T scanners, respectively. Our study showed that the new in-house automated method for MRPI calculation was highly accurate in distinguishing PSP from PD. Our automatic approach allows a widespread use of MRPI in clinical practice and in longitudinal research studies. (orig.)

  17. Magnetic Resonance Parkinsonism Index: diagnostic accuracy of a fully automated algorithm in comparison with the manual measurement in a large Italian multicentre study in patients with progressive supranuclear palsy

    International Nuclear Information System (INIS)

    Nigro, Salvatore; Arabia, Gennarina; Antonini, Angelo; Weis, Luca; Marcante, Andrea; Tessitore, Alessandro; Cirillo, Mario; Tedeschi, Gioacchino; Zanigni, Stefano; Tonon, Caterina; Calandra-Buonaura, Giovanna; Pezzoli, Gianni; Cilia, Roberto; Zappia, Mario; Nicoletti, Alessandra; Cicero, Calogero Edoardo; Tinazzi, Michele; Tocco, Pierluigi; Cardobi, Nicolo; Quattrone, Aldo

    2017-01-01

    To investigate the reliability of a new in-house automatic algorithm for calculating the Magnetic Resonance Parkinsonism Index (MRPI), in a large multicentre study population of patients affected by progressive supranuclear palsy (PSP) or Parkinson's disease (PD), and healthy controls (HC), and to compare the diagnostic accuracy of the automatic and manual MRPI values. The study included 88 PSP patients, 234 PD patients and 117 controls. MRI was performed using both 3T and 1.5T scanners. Automatic and manual MRPI values were evaluated, and accuracy of both methods in distinguishing PSP from PD and controls was calculated. No statistical differences were found between automated and manual MRPI values in all groups. The automatic MRPI values differentiated PSP from PD with an accuracy of 95 % (manual MRPI accuracy 96 %) and 97 % (manual MRPI accuracy 100 %) for 1.5T and 3T scanners, respectively. Our study showed that the new in-house automated method for MRPI calculation was highly accurate in distinguishing PSP from PD. Our automatic approach allows a widespread use of MRPI in clinical practice and in longitudinal research studies. (orig.)

  18. Fully Automatic In-Syringe Magnetic Stirring-Assisted Dispersive Liquid-Liquid Microextraction Hyphenated to High-Temperature Torch Integrated Sample Introduction System-Inductively Coupled Plasma Spectrometer with Direct Injection of the Organic Phase.

    Science.gov (United States)

    Sánchez, Raquel; Horstkotte, Burkhard; Fikarová, Kateřina; Sklenářová, Hana; Maestre, Salvador; Miró, Manuel; Todolí, Jose-Luis

    2017-03-21

    A proof of concept study involving the online coupling of automatic dispersive liquid-liquid microextraction (DLLME) to inductively coupled plasma optical emission spectrometry (ICP OES) with direct introduction and analysis of the organic extract is herein reported for the first time. The flow-based analyzer features a lab-in-syringe (LIS) setup with an integrated stirring system, a Meinhard nebulizer in combination with a heated single-pass spray chamber, and a rotary injection valve, used as an online interface between the microextraction system and the detection instrument. Air-segmented flow was used for delivery of a fraction of the nonwater miscible extraction phase, 12 μL of xylene, to the nebulizer. All sample preparative steps including magnetic stirring assisted DLLME were carried out inside the syringe void volume as a size-adaptable yet sealed mixing and extraction chamber. Determination of trace level concentrations of cadmium, copper, lead, and silver as model analytes has been demonstrated by microextraction as diethyldithiophosphate (DDTP) complexes. The automatic LIS-DLLME method features quantitative metal extraction, even in troublesome sample matrixes, such as seawater, salt, and fruit juices, with relative recoveries within the range of 94-103%, 93-100%, and 92-99%, respectively. Furthermore, no statistically significant differences at the 0.05 significance level were found between concentration values experimentally obtained and the certified values of two serum standard reference materials.

  19. Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

    International Nuclear Information System (INIS)

    Ambrosch, K.-E.

    1985-01-01

    Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

  20. Tensile strain induced changes in the optical spectra of SrTiO.sub.3./sub. epitaxial thin films

    Czech Academy of Sciences Publication Activity Database

    Dejneka, Alexandr; Tyunina, M.; Narkilahti, J.; Levoska, J.; Chvostová, Dagmar; Jastrabík, Lubomír; Trepakov, Vladimír

    2010-01-01

    Roč. 52, č. 10 (2010), 2082-2089 ISSN 1063-7834 R&D Projects: GA ČR GA202/08/1009; GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : SrTiO 3 epitaxial thin films * effect of biaxial tensile strains on optical spectra Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.727, year: 2010

  1. Growth of high purity semiconductor epitaxial layers by liquid phase ...

    Indian Academy of Sciences (India)

    Unknown

    operation of these devices strongly depend on the quality of the epitaxial layers. The growth system must be able to grow materials with very low unintentional impurity den- sity, high mobility and good luminescence properties. We have used LPE technique to perfect the growth of a num- ber of group III–V epitaxial materials ...

  2. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications ...

  3. Antiphase boundaries induced exchange coupling in epitaxial Fe3O4 thin films

    International Nuclear Information System (INIS)

    Arora, S.K.; Sofin, R.G.S.; Nolan, A.; Shvets, I.V.

    2005-01-01

    We have observed an exchange bias effect on field cooling of epitaxial magnetite, Fe 3 O 4 , films on MgO (1 0 0) substrates. We attribute this effect to the presence of antiphase boundaries (APBs). Magnitude of the exchange bias field (H e ) strongly depends on the thermo-magnetic history of the sample. The strength of the H e was found to increase with an increase in film thickness and is attributed to the strain driven redistribution of atoms in the vicinity of APBs leading to enhanced antiferromagnetic exchange interactions

  4. Epitaxial Ni films, e-beam nano-patterning and BMR

    Science.gov (United States)

    Lukaszew, R. Alejandra; Zhang, Zhengdong; Pearson, Dave; Zambano, Antonio

    2004-05-01

    We have attempted to clarify possible domain-wall processes present in the recently reported large ballistic magnetoresistance effects in nano-contacts. To that effect we have used e-beam lithography applied to epitaxial Ni films to fabricate nano-bridges in more controlled geometry than electrochemical deposition. Our preliminary results indicate that magnetic domains do play a role in the magneto-resistance of these nano-bridges but the order of magnitude of the observed effect is considerably smaller than the reported observations in electrochemically prepared nano-contacts.

  5. Epitaxial Ni films, e-beam nano-patterning and BMR

    International Nuclear Information System (INIS)

    Lukaszew, R.A.; Zhang Zhengdong; Pearson, Dave; Zambano, Antonio

    2004-01-01

    We have attempted to clarify possible domain-wall processes present in the recently reported large ballistic magnetoresistance effects in nano-contacts. To that effect we have used e-beam lithography applied to epitaxial Ni films to fabricate nano-bridges in more controlled geometry than electrochemical deposition. Our preliminary results indicate that magnetic domains do play a role in the magneto-resistance of these nano-bridges but the order of magnitude of the observed effect is considerably smaller than the reported observations in electrochemically prepared nano-contacts

  6. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    International Nuclear Information System (INIS)

    Jungwirth, T.; Novak, V.; Cukr, M.; Zemek, J.; Marti, X.; Horodyska, P.; Nemec, P.; Holy, V.; Maca, F.; Shick, A. B.; Masek, J.; Kuzel, P.; Nemec, I.; Gallagher, B. L.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.

    2011-01-01

    Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

  7. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Guchhait, S.; Jamil, M.; Ohldag, H.; Mehta, A.; Arenholz, E.; Lian, G.; Li Fatou, A.; Ferrer, D. A.; Markert, J. T.; Colombo, L.; Banerjee, S. K.

    2011-01-05

    We have studied ferromagnetism of Mn-implanted epitaxial Ge films on silicon. The Ge films were grown by ultrahigh vacuum chemical vapor deposition using a mixture of germane (GeH{sub 4}) and methylgermane (CH{sub 3}GeH{sub 3}) gases with a carbon concentration of less than 1 at. %, and observed surface rms roughness of 0.5 nm, as measured by atomic force microscopy. Manganese ions were implanted in epitaxial Ge films grown on Si (100) wafers to an effective concentration of 16, 12, 6, and 2 at. %. Superconducting quantum interference device measurements showed that only the three highest Mn concentration samples are ferromagnetic, while the fourth sample, with [Mn] = 2 at. %, is paramagnetic. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate that localized Mn moments are ferromagnetically coupled below the Curie temperature. Isothermal annealing of Mn-implanted Ge films with [Mn] = 16 at. % at 300 C for up to 1200 s decreases the magnetization but does not change the Curie temperature, suggesting that the amount of the magnetic phase slowly decreases with time at this anneal temperature. Furthermore, transmission electron microscopy and synchrotron grazing incidence x-ray diffraction experiments show that the Mn-implanted region is amorphous, and we believe that it is this phase that is responsible for the ferromagnetism. This is supported by our observation that high-temperature annealing leads to recrystallization and transformation of the material into a paramagnetic phase.

  8. Coexistence of Low Damping and Strong Magnetoelastic Coupling in Epitaxial Spinel Ferrite Thin Films.

    Science.gov (United States)

    Emori, Satoru; Gray, Benjamin A; Jeon, Hyung-Min; Peoples, Joseph; Schmitt, Maxwell; Mahalingam, Krishnamurthy; Hill, Madelyn; McConney, Michael E; Gray, Matthew T; Alaan, Urusa S; Bornstein, Alexander C; Shafer, Padraic; N'Diaye, Alpha T; Arenholz, Elke; Haugstad, Greg; Meng, Keng-Yuan; Yang, Fengyuan; Li, Dongyao; Mahat, Sushant; Cahill, David G; Dhagat, Pallavi; Jander, Albrecht; Sun, Nian X; Suzuki, Yuri; Howe, Brandon M

    2017-09-01

    Low-loss magnetization dynamics and strong magnetoelastic coupling are generally mutually exclusive properties due to opposing dependencies on spin-orbit interactions. So far, the lack of low-damping, magnetostrictive ferrite films has hindered the development of power-efficient magnetoelectric and acoustic spintronic devices. Here, magnetically soft epitaxial spinel NiZnAl-ferrite thin films with an unusually low Gilbert damping parameter (ferrite. At the same time, the coherently strained film structure suppresses extrinsic damping, enables soft magnetic behavior, and generates large easy-plane magnetoelastic anisotropy. These findings provide a foundation for a new class of low-loss, magnetoelastic thin film materials that are promising for spin-mechanical devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Anisotropic suppression of octahedral breathing distortion with the fully strained BaBiO3/BaCeO3 heterointerface

    Science.gov (United States)

    Lee, Han Gyeol; Kim, Rokyeon; Kim, Jinkwon; Kim, Minu; Kim, Tae Heon; Lee, Shinbuhm; Noh, Tae Won

    2018-01-01

    While the physiochemical effects of octahedral tilting and rotating distortions have been studied extensively, octahedral breathing distortion (OBD) at heterointerfaces has rarely been explored. Here, we investigated OBD in fully strained BaBiO3 (BBO) epitaxial films by making a new type of oxide heterointerface with non-breathing BaCeO3 epitaxial films. The integration of first-principles calculations with experimental observations of optical spectroscopy revealed that the oxygen displacement modes in BBO became disordered within six unit cells at the heterointerface and the surface. Controlling OBD in perovskite oxide thin films provides a means to exploit emerging material properties.

  10. Interface relaxation and band gap shift in epitaxial layers

    Directory of Open Access Journals (Sweden)

    Ziming Zhu

    2012-12-01

    Full Text Available Although it is well known that the interface relaxation plays the crucial role for the electronic properties in semiconductor epitaxial layers, there is lack of a clear definition of relationship between interfacial bond-energy variation and interface bond-nature-factor (IBNF in epitaxial layers before and after relaxation. Here we establish an analytical method to shed light on the relationship between the IBNF and the bond-energy change, as well as the relation with band offset in epitaxial layers from the perspective of atomic-bond-relaxation consideration and continuum mechanics. The theoretical predictions are consistent with the available evidences, which provide an atomistic understanding on underlying mechanism of interface effect in epitaxial nanostructures. Thus, it will be helpful for opening up to tailor physical-chemical properties of the epitaxial nanostructures to the desired specifications.

  11. Magnetic anisotropy engineering in square magnetic elements

    International Nuclear Information System (INIS)

    Di Bona, A.; Contri, S.F.; Gazzadi, G.C.; Valeri, S.; Vavassori, P.

    2007-01-01

    Square magnetic elements with side in the 100-500 nm range have been fabricated using the focused ion beam (FIB) milling technique from a 10 nm thick, single-crystal Fe film, epitaxially grown on MgO(0 0 1). Thanks to the good crystal quality of the film, magnetic elements with well-defined magnetocrystalline anisotropy have been prepared, while the fine control of the size and shape of the magnets allows for the effective engineering of the anisotropic behavior of the magnetostatic energy that determines the so-called configurational anisotropy. Micromagnetic calculations and experiments show that the angular dependence of the transverse susceptibility has a strong dependence on the material parameters as well as on the static applied field. This allows the effective engineering of the total anisotropy of the magnets

  12. Spin-dependent transport in epitaxial Fe wires on GaAs(110); Spinabhaengiger Transport in epitaktischen Fe-Leiterbahnen auf GaAs(110)

    Energy Technology Data Exchange (ETDEWEB)

    Hassel, Christoph

    2009-08-11

    In the present thesis, the spin dependent transport in epitaxial Fe wires as well as in perpendicularly magnetized multilayer wires is investigated. The main focus is on the investigation of quantum transport phenomena, the domain wall resistance as well as the current induced domain wall motion. Epitaxial Fe wires are prepared from epitaxial Fe films by means of electron beam lithography. Because of the intrinsic magnetic anisotropy, it is possible to prepare wires with a remanent transversal magnetization. Magnetic force microscopy is used to image the magnetic state of single wires. The magnetization reversal behaviour of these wires is investigated in detail using magnetoresistance measurements. These measurements are dominated by effects of the anisotropic magnetoresistance and can be explained by micromagnetic calculations. For the first time, quantum transport phenomena in epitaxial Fe wires are studied by magnetoresistance measurements for temperatures down to 20 mK. These measurements clearly indicate that, independent of the wire width and orientation, no contribution due to weak electron localization can be observed. The results are quantitatively explained within the framework of enhanced electron-electron interactions. Furthermore, by reducing the wire width the onset of the transition from two-dimensional to one-dimensional behaviour is found. To determine the domain wall resistance, a different number of domain walls is created in various structures, whereby the epitaxial samples allow to investigate different domain wall structures. First, a technique based on the stray field of a magnetic force microscope tip is presented. Furthermore, the influence of the shape anisotropy on the coercive field of single wires is used. Contributions to the observed resistance change due to the anisotropic magnetoresistance are calculated using micromagnetic simulations. A positive intrinsic relative resistance increase of 0.2% within the domain wall is found at

  13. Preferential growth and peculiar interfacial atomic configuration of the YBCO liquid-phase epitaxial film with 45.sup.o./sup. in-plane alignment

    Czech Academy of Sciences Publication Activity Database

    Cai, Y.Q.; Wan, W.; Li, F.H.; Wang, X.; Yan, S.B.; Tang, Ch.Y.; Yao, X.; Jirsa, Miloš; Xiong, J.; Tao, B.W.

    2009-01-01

    Roč. 9, č. 7 (2009), s. 3218-3221 ISSN 1528-7483 R&D Projects: GA ČR GA202/08/0722 Institutional research plan: CEZ:AV0Z10100520 Keywords : YBCO thin films * liquid/phase epitaxy * magnetic properties * preferential 45 o in-plane orientation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.162, year: 2009

  14. Axiomatisation of fully probabilistic design

    Czech Academy of Sciences Publication Activity Database

    Kárný, Miroslav; Kroupa, Tomáš

    2012-01-01

    Roč. 186, č. 1 (2012), s. 105-113 ISSN 0020-0255 R&D Projects: GA MŠk(CZ) 2C06001; GA ČR GA102/08/0567 Institutional research plan: CEZ:AV0Z10750506 Keywords : Bayesian decision making * Fully probabilistic design * Kullback–Leibler divergence * Unified decision making Subject RIV: BB - Applied Statistics, Operational Research Impact factor: 3.643, year: 2012 http://library.utia.cas.cz/separaty/2011/AS/karny-0367271.pdf

  15. Mini array of quantum Hall devices based on epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Novikov, S.; Lebedeva, N. [Department of Micro and Nanosciences, Aalto University, Micronova, Tietotie 3, Espoo (Finland); Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, 02044 VTT (Finland)

    2016-05-07

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.

  16. Towards a Scalable Fully-Implicit Fully-coupled Resistive MHD Formulation with Stabilized FE Methods

    Energy Technology Data Exchange (ETDEWEB)

    Shadid, J N; Pawlowski, R P; Banks, J W; Chacon, L; Lin, P T; Tuminaro, R S

    2009-06-03

    This paper presents an initial study that is intended to explore the development of a scalable fully-implicit stabilized unstructured finite element (FE) capability for low-Mach-number resistive MHD. The discussion considers the development of the stabilized FE formulation and the underlying fully-coupled preconditioned Newton-Krylov nonlinear iterative solver. To enable robust, scalable and efficient solution of the large-scale sparse linear systems generated by the Newton linearization, fully-coupled algebraic multilevel preconditioners are employed. Verification results demonstrate the expected order-of-acuracy for the stabilized FE discretization of a 2D vector potential form for the steady and transient solution of the resistive MHD system. In addition, this study puts forth a set of challenging prototype problems that include the solution of an MHD Faraday conduction pump, a hydromagnetic Rayleigh-Bernard linear stability calculation, and a magnetic island coalescence problem. Initial results that explore the scaling of the solution methods are presented on up to 4096 processors for problems with up to 64M unknowns on a CrayXT3/4. Additionally, a large-scale proof-of-capability calculation for 1 billion unknowns for the MHD Faraday pump problem on 24,000 cores is presented.

  17. Graphene nanoribbons epitaxy on boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-03-14

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  18. Development of an all-nitride magnetic tunnel junction

    NARCIS (Netherlands)

    Borsa, D.M.; Grachev, S.Y.; Kerssemakers, J.W J; Boerma, D.O

    We are developing an all-nitride magnetic tunnel junction. Here, we report on the growth and properties of gamma'-Fe4N, alpha"-Fe16N2 and Cu3N. Epitaxial gamma'-Fe4N films were grown by molecular beam epitaxy of iron in the presence of atomic nitrogen from an RF atomic source. Layers of Cu3N were

  19. DOE-EPSCoR. Exchange interactions in epitaxial intermetallic layered systems

    Energy Technology Data Exchange (ETDEWEB)

    LeClair, Patrick R. [Univ. of Alabama, Tuscaloosa, AL (United States); Gary, Mankey J. [Univ. of Alabama, Tuscaloosa, AL (United States)

    2015-05-25

    The goal of this research is to develop a fundamental understanding of the exchange interactions in epitaxial intermetallic alloy thin films and multilayers, including films and multilayers of Fe-Pt, Co-Pt and Fe-P-Rh alloys deposited on MgO and Al2O3 substrates. Our prior results have revealed that these materials have a rich variety of ferromagnetic, paramagnetic and antiferromagnetic phases which are sensitive functions of composition, substrate symmetry and layer thickness. Epitaxial antiferromagnetic films of FePt alloys exhibit a different phase diagram than bulk alloys. The antiferromagnetism of these materials has both spin ordering transitions and spin orienting transitions. The objectives include the study of exchange-inversion materials and the interface of these materials with ferromagnets. Our aim is to formulate a complete understanding of the magnetic ordering in these materials, as well as developing an understanding of how the spin structure is modified through contact with a ferromagnetic material at the interface. The ultimate goal is to develop the ability to tune the phase diagram of the materials to produce layered structures with tunable magnetic properties. The alloy systems that we will study have a degree of complexity and richness of magnetic phases that requires the use of the advanced tools offered by the DOE-operated national laboratory facilities, such as neutron and x-ray scattering to measure spin ordering, spin orientations, and element-specific magnetic moments. We plan to contribute to DOE’s mission of producing “Materials by Design” with properties determined by alloy composition and crystal structure. We have developed the methods for fabricating and have performed neutron diffraction experiments on some of the most interesting phases, and our work will serve to answer questions raised about the element-specific magnetizations using the magnetic x-ray dichroism techniques and interface magnetism in layered structures

  20. Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M., E-mail: manuel.bibes@thalesgroup.com [Unité Mixte de Physique, CNRS-Thales, 1 Av. Augustin Fresnel, Campus de l' Ecole Polytechnique, 91120 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France); Zhao, H. J. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Chen, X. M. [Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Bellaiche, L. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

    2014-10-27

    We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C} = 31.8 K with a saturation magnetization of 4.2 μ{sub B} per formula unit at 10 K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ∼0.7 eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

  1. Epitaxial YBa2Cu3O7-x nanocomposite thin films from colloidal solutions

    Science.gov (United States)

    Cayado, P.; De Keukeleere, K.; Garzón, A.; Perez-Mirabet, L.; Meledin, A.; De Roo, J.; Vallés, F.; Mundet, B.; Rijckaert, H.; Pollefeyt, G.; Coll, M.; Ricart, S.; Palau, A.; Gázquez, J.; Ros, J.; Van Tendeloo, G.; Van Driessche, I.; Puig, T.; Obradors, X.

    2015-12-01

    A methodology of general validity to prepare epitaxial nanocomposite films based on the use of colloidal solutions containing different crystalline preformed oxide nanoparticles (ex situ nanocomposites) is reported. The trifluoroacetate (TFA) metal-organic chemical solution deposition route is used with alcoholic solvents to grow epitaxial YBa2Cu3O7 (YBCO) films. For this reason stabilizing oxide nanoparticles in polar solvents is a challenging goal. We have used scalable nanoparticle synthetic methodologies such as thermal and microwave-assisted solvothermal techniques to prepare CeO2 and ZrO2 nanoparticles. We show that stable and homogeneous colloidal solutions with these nanoparticles can be reached using benzyl alcohol, triethyleneglycol, nonanoic acid, trifluoroacetic acid or decanoic acid as protecting ligands, thereby allowing subsequent mixing with alcoholic TFA solutions. An elaborate YBCO film growth analysis of these nanocomposites allows the identification of the different relevant growth phenomena, e.g. nanoparticles pushing towards the film surface, nanoparticle reactivity, coarsening and nanoparticle accumulation at the substrate interface. Upon mitigation of these effects, YBCO nanocomposite films with high self-field critical currents (J c ˜ 3-4 MA cm-2 at 77 K) were reached, indicating no current limitation effects associated with epitaxy perturbation, while smoothed magnetic field dependences of the critical currents at high magnetic fields and decreased effective anisotropic pinning behavior confirm the effectiveness of the novel developed approach to enhance vortex pinning. In conclusion, a novel low cost solution-derived route to high current nanocomposite superconducting films and coated conductors has been developed with very promising features.

  2. 2D vibrational properties of epitaxial silicene on Ag(111)

    Science.gov (United States)

    Solonenko, Dmytro; Gordan, Ovidiu D.; Le Lay, Guy; Sahin, Hasan; Cahangirov, Seymur; Zahn, Dietrich R. T.; Vogt, Patrick

    2017-03-01

    The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational characteristics. Here, we present a detailed study of epitaxial silicene on Ag(111) using in situ Raman spectroscopy, which is one of the most extensively employed experimental techniques to characterize 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous. The vibrational fingerprint of epitaxial silicene, in contrast to all previous interpretations, is characterized by three distinct phonon modes with A and E symmetries. Both, energies and symmetries of theses modes are confirmed by ab initio theory calculations. The temperature dependent spectral evolution of these modes demonstrates unique thermal properties of epitaxial silicene and a significant electron-phonon coupling. These results unambiguously support the purely two-dimensional character of epitaxial silicene up to about 300 °C, whereupon a 2D-to-3D phase transition takes place. The detailed fingerprint of epitaxial silicene will allow us to identify it in different environments or to study its modifications.

  3. In situ Polarized Neutron Reflectometry: Epitaxial Thin-Film Growth of Fe on Cu(001) by dc Magnetron Sputtering

    Science.gov (United States)

    Kreuzpaintner, Wolfgang; Wiedemann, Birgit; Stahn, Jochen; Moulin, Jean-François; Mayr, Sina; Mairoser, Thomas; Schmehl, Andreas; Herrnberger, Alexander; Korelis, Panagiotis; Haese, Martin; Ye, Jingfan; Pomm, Matthias; Böni, Peter; Mannhart, Jochen

    2017-05-01

    The stepwise growth of epitaxial Fe on Cu (001 )/Si (001 ) , investigated by in situ polarized neutron reflectometry is presented. A sputter deposition system was integrated into the neutron reflectometer AMOR at the Swiss neutron spallation source SINQ, which enables the analysis of the microstructure and magnetic moments during all deposition steps of the Fe layer. We report on the progressive evolution of the accessible parameters describing the microstructure and the magnetic properties of the Fe film, which reproduce known features and extend our knowledge on the behavior of ultrathin iron films.

  4. Coincident-site lattice matching during van der Waals epitaxy

    OpenAIRE

    Boschker, Jos E.; Galves, Lauren A.; Flissikowski, Timur; Lopes, Joao Marcelo J.; Riechert, Henning; Calarco, Raffaella

    2015-01-01

    Van der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb2Te3 films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6?3???6?3)R30? buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D) bonded materials. It is shown that the Sb2Te3 /graphene interface is stable and that coincidence lattices are formed between the epilayers and substrate ...

  5. Organometallic vapor-phase epitaxy theory and practice

    CERN Document Server

    Stringfellow, Gerald B

    1989-01-01

    Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

  6. Substrate heater for the growth of epitaxial silicon films

    Science.gov (United States)

    Deming, Matthew; Varhue, Walter; Adams, Edward; Lavoie, Mark

    1999-03-01

    The single wafer processing of epitaxial Si films requires that special attention be paid to the design of the substrate heater assembly. This document describes the evolution and testing of an in situ heater used to deposit epitaxial Si films at temperatures as high as 700 °C. One problem encountered was the production of excessive levels of ultraviolet radiation which contributed to the desorption of water vapor from the vacuum chamber walls during the in situ cleaning process. A second problem involved the formation of a molybdenum containing film that poisoned epitaxial growth. A final proven in situ heater design is presented which avoids these problems.

  7. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  8. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  9. From epitaxial growth of ferrite thin films to spin-polarized tunnelling

    International Nuclear Information System (INIS)

    Moussy, Jean-Baptiste

    2013-01-01

    This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

  10. Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon.

    Science.gov (United States)

    Hudait, Mantu K; Clavel, Michael; Goley, Patrick S; Xie, Yuantao; Heremans, Jean J

    2015-10-14

    The magnetotransport properties of epitaxial Ge/AlAs heterostructures with different growth conditions and substrate architectures have been studied under ±9 T magnetic field and at 390 mK temperature. Systematic mobility measurements of germanium (Ge) epilayers grown on GaAs substrates at growth temperatures from 350 to 450 °C allow us to extract a precise growth window for device-quality Ge, corroborated by structural and morphological properties. Our results on Si substrate using a composite metamorphic AlAs/GaAs buffer at 400 °C Ge growth temperature, show that the Ge/AlAs system can be tailored to have a single carrier transport while keeping the charge solely in the Ge layer. Single carrier transport confined to the Ge layer is demonstrated by the weak-localization quantum correction to the conductivity observed at low magnetic fields and 390 mK temperature. The weak localization effect points to a near-absence of spin-orbit interaction for carriers in the electronically active layer and is used here for the first time to pinpoint Ge as this active layer. Thus, the epitaxial Ge grown on Si using AlAs/GaAs buffer architecture is a promising candidate for next-generation energy-efficient fin field-effect transistor applications.

  11. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    Science.gov (United States)

    Jeen, Hyoungjeen; Lee, Ho Nyung

    2015-12-01

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5 thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

  12. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    Directory of Open Access Journals (Sweden)

    Hyoungjeen Jeen

    2015-12-01

    Full Text Available Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx epitaxially grown by pulsed laser epitaxy (PLE as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5 thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ. We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

  13. Structural evolution of epitaxial SrCoO{sub x} films near topotactic phase transition

    Energy Technology Data Exchange (ETDEWEB)

    Jeen, Hyoungjeen [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Physics, Pusan National University, Busan, 609735 (Korea, Republic of); Lee, Ho Nyung, E-mail: hnlee@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2015-12-15

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoO{sub x}) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO{sub 2.5} thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO{sub 3-δ}). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

  14. Observation of longitudinal spin-Seebeck effect in cobalt-ferrite epitaxial thin films

    Directory of Open Access Journals (Sweden)

    Tomohiko Niizeki

    2015-05-01

    Full Text Available The longitudinal spin-Seebeck effect (LSSE has been investigated in cobalt ferrite (CFO, an exceptionally hard magnetic spinel ferrite. A bilayer of a polycrystalline Pt and an epitaxially-strained CFO(110 exhibiting an in-plane uniaxial anisotropy was prepared by reactive rf sputtering technique. Thermally generated spin voltage in the CFO layer was measured via the inverse spin-Hall effect in the Pt layer. External-magnetic-field (H dependence of the LSSE voltage (VLSSE in the Pt/CFO(110 sample with H ∥ [001] was found to exhibit a hysteresis loop with a high squareness ratio and high coercivity, while that with H ∥ [ 1 1 ̄ 0 ] shows a nearly closed loop, reflecting the different anisotropies induced by the epitaxial strain. The magnitude of VLSSE has a linear relationship with the temperature difference (ΔT, giving the relatively large VLSSE /ΔT of about 3 μV/K for CFO(110 which was kept even at zero external field.

  15. First principles studies of semiconductor epitaxial growth

    Science.gov (United States)

    Tsai, Bao-Liang

    This thesis conducts investigations mainly on the structures, energetics, and recations of semiconductor as well as oxide surfaces using first principles cluster model approach. The first part of the research work addresses the issues in the epitaxial growth of Hgsb{1-x}Cdsb{x}Te (MCT) materials. Hg divalent compounds were studied thoroughly using a variety of quantum chemical methods in order to understand the energetics of Hg precursors for growth. The (001) growth surfaces were then examined in detail using cluster model calculations. Based on these results, a novel metal-organic molecular beam epitaxial (MOMBE) growth strategy with favorable energetics for growing MCT using Hsb2C=CH-CHsb2-Hg-Cequiv C-CHsb3 is proposed. It is hoped that with this new growth strategy, the Hg vacancy and p-doping problems that currently exist in growth can be avoided. The second part of the thesis discusses the molecular beam epitaxial (MBE) growth of cubic GaN on the (001) surface using various N sources. Surface reconstructions and the interactions of gas-phase atomic and molecular nitrogens with the surface were elucidated using cluster models. Using these results an energy phase diagram for the growth of GaN has been constructed. It suggests that excited state molecular Nsb2\\ (sp3Sigmasbsp{u}{+}) is the most favorable of all N species for growth of high quality GaN because it can undergo a dissociative chemisorption process. Ground state atomic N\\ (sp4S) is also good for growth. The doublet excited states N\\ (sp2D and sp2P) might cause surface N abstraction, leading to N vacancies in the material. Finally, a Fe(OH)sb3(Hsb2O)sb3 GVB cluster model of crystalline alpha-Fesb2Osb3 was developed. This simple model can describe the local geometry and bonding of Fe in the bulk oxide. Using quantum mechanical calculations, the orientation of the oleic imidazoline (OI) molecule bonding to the oxide surface has been determined. OI class of molecules are used extensively for corrosion

  16. Magnetic Properties of Fibonacci-Modulated Fe-Au Multilayer Metamaterials.

    Science.gov (United States)

    Suwa, Tomomi; Tomita, Satoshi; Hosoito, Nobuyoshi; Yanagi, Hisao

    2017-10-20

    Herein we experimentally study magnetic multilayer metamaterials with broken translational symmetry. Epitaxially-grown iron-gold (Fe-Au) multilayers modulated using Fibonacci sequence-referred to as magnetic inverse Fibonacci-modulated multilayers (IFMs)-are prepared using ultra-high-vacuum vapor deposition. Experimental results of in-situ reflection high-energy electron diffraction, magnetization curves, and ferromagnetic resonance demonstrate that the epitaxially-grown Fe-Au IFMs have quasi-isotropic magnetization, in contrast to the in-plane magnetization easy axis in the periodic multilayers.

  17. Magnetic Properties of Fibonacci-Modulated Fe-Au Multilayer Metamaterials

    Directory of Open Access Journals (Sweden)

    Tomomi Suwa

    2017-10-01

    Full Text Available Herein we experimentally study magnetic multilayer metamaterials with broken translational symmetry. Epitaxially-grown iron-gold (Fe-Au multilayers modulated using Fibonacci sequence—referred to as magnetic inverse Fibonacci-modulated multilayers (IFMs—are prepared using ultra-high-vacuum vapor deposition. Experimental results of in-situ reflection high-energy electron diffraction, magnetization curves, and ferromagnetic resonance demonstrate that the epitaxially-grown Fe-Au IFMs have quasi-isotropic magnetization, in contrast to the in-plane magnetization easy axis in the periodic multilayers.

  18. Highly ordered FEPT and FePd magnetic nano-structures: Correlated structural and magnetic studies

    International Nuclear Information System (INIS)

    Lukaszew, Rosa Alejandra; Cebollada, Alfonso; Clavero, Cesar; Garcia-Martin, Jose Miguel

    2006-01-01

    The micro-structure of epitaxial FePt and FePd films grown on MgO (0 0 1) substrates is correlated to their magnetic behavior. The FePd films exhibit high chemical ordering and perpendicular magnetic anisotropy. On the other hand FePt films exhibit low chemical ordering, with nano-grains oriented in two orthogonal directions, forcing the magnetization to remain in the plane of the films

  19. Optical characterization of epitaxial semiconductor layers

    CERN Document Server

    Richter, Wolfgang

    1996-01-01

    The last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on non-destructive in-situ characterization. Among those, methods which rely on the interaction of electromagnetic radiation with matter are particularly valuable. In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures (such as reflection anistropy spectroscopy, infrared reflection-absorption spectroscopy, second-harmonic generation, and others). This volume is intended for researchers working at universities or in industry, as well as for graduate students who are interested in the characterization of ...

  20. Shaping metal nanocrystals through epitaxial seeded growth

    Energy Technology Data Exchange (ETDEWEB)

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  1. Epitaxial growth by monolayer restricted galvanic displacement

    Directory of Open Access Journals (Sweden)

    Vasilić Rastko

    2012-01-01

    Full Text Available The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV and scanning tunneling microscopy (STM are employed to carry out and monitor a “quasi-perfect”, two-dimensional growth of Ag on Au(111, Cu on Ag(111, and Cu on Au(111 by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

  2. Magnetic monolayers on semiconducting substrates. An in situ FMR study of Fe-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zakeri Lori, K.

    2007-10-18

    The growth, magnetic anisotropy, g-factor, and magnetization of Fe monolayers grown on GaAs(001), InAs(001), and InP(001) are investigated by a combination of in situ ferromagnetic resonance and SQUID magnetometry as a function of temperature and film thickness. The effect of stress caused by the lattice mismatch and the surface reconstruction on the magnetic anisotropy is quantified. An in-plane spin reorientation transition as a function of film thickness is observed at room temperature for all systems. A magneto-elastic model is used to explain the direction of the easy axis, the spin reorientation transition, and the contributions to the magnetic anisotropy terms using the stress components measured directly by in situ IV-low-energy electron diffraction. While the model gives a quantitative explanation of the out-of-plane magnetic anisotropy, changes of the electronic interface structure have to be taken into account for the in-plane magnetic anisotropy. The influence of Ag and Au buffer and cap layers on the magnetic anisotropy terms are determined. The temperature dependence of the total magnetic anisotropy, as well as the surface-interface and volume contribution to the magnetic anisotropy are determined for Fe monolayers on GaAs(001). It is demonstrated that the temperature dependence of the magnetic anisotropy is correlated with the temperature dependence of the magnetization according to the Callen-Callen model. The temperature dependence of the volume contribution to the perpendicular magnetic anisotropy is fully explained by the temperature dependence of the magneto-elastic anisotropy. A temperature-driven morphological transformation occurring at a temperature higher than 550 K depending on the film thickness is observed. The thin Fe3Si binary Heusler structure epitaxially grown on MgO(001) is investigated. In addition to the structural properties, magnetic anisotropy, magnetization, g-factor, spin, and orbital magnetism, the magnetic relaxation

  3. Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films

    Science.gov (United States)

    Sofin, R. G. S.; Wu, Han-Chun; Ramos, R.; Arora, S. K.; Shvets, I. V.

    2015-11-01

    We studied Fe3O4 (110) films grown epitaxially on MgO (110) substrates using oxygen plasma assisted molecular beam epitaxy. The films with thickness of 30-200 nm showed anisotropic in-plane partial strain relaxation. Magneto resistance (MR) measurements with current and magnetic field along ⟨001⟩ direction showed higher MR compared to ⟨1 ¯ 10 ⟩ direction. Maximum value of MR was measured at Verwey transition temperature for both directions. We explain the observed anisotropy in the MR on the basis of the effects of anisotropic misfit strain, and the difference between the density of antiferromagnetically coupled antiphase boundaries formed along ⟨001⟩ and ⟨1 ¯ 10 ⟩ crystallographic directions, suggesting the dependence of spin polarisation on the anisotropic strain relaxation along the said crystallographic directions.

  4. Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface

    International Nuclear Information System (INIS)

    Liu, Y. C.; Hung, H. Y.; Kwo, J.; Chen, Y. W.; Lin, Y. H.; Cheng, C. K.; Hong, M.; Tseng, S. C.; Hsu, C. H.; Chang, M. T.; Lo, S. C.

    2015-01-01

    Single crystal ferromagnetic Fe 3 Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe 3 Si/GaAs(111) yielded a saturation moment of 990 emu/cm 3 with a small coercive field ≤1 Oe at room temperature

  5. Toward textbook multigrid efficiency for fully implicit resistive magnetohydrodynamics

    KAUST Repository

    Adams, Mark F.

    2010-09-01

    Multigrid methods can solve some classes of elliptic and parabolic equations to accuracy below the truncation error with a work-cost equivalent to a few residual calculations so-called "textbook" multigrid efficiency. We investigate methods to solve the system of equations that arise in time dependent magnetohydrodynamics (MHD) simulations with textbook multigrid efficiency. We apply multigrid techniques such as geometric interpolation, full approximate storage, Gauss-Seidel smoothers, and defect correction for fully implicit, nonlinear, second-order finite volume discretizations of MHD. We apply these methods to a standard resistive MHD benchmark problem, the GEM reconnection problem, and add a strong magnetic guide field, which is a critical characteristic of magnetically confined fusion plasmas. We show that our multigrid methods can achieve near textbook efficiency on fully implicit resistive MHD simulations. (C) 2010 Elsevier Inc. All rights reserved.

  6. Toward textbook multigrid efficiency for fully implicit resistive magnetohydrodynamics

    International Nuclear Information System (INIS)

    Adams, Mark F.; Samtaney, Ravi; Brandt, Achi

    2013-01-01

    Multigrid methods can solve some classes of elliptic and parabolic equations to accuracy below the truncation error with a work-cost equivalent to a few residual calculations so-called textbook multigrid efficiency. We investigate methods to solve the system of equations that arise in time dependent magnetohydrodynamics (MHD) simulations with textbook multigrid efficiency. We apply multigrid techniques such as geometric interpolation, full approximate storage, Gauss-Seidel smoothers, and defect correction for fully implicit, nonlinear, second-order finite volume discretizations of MHD. We apply these methods to a standard resistive MHD benchmark problem, the GEM reconnection problem, and add a strong magnetic guide field, which is a critical characteristic of magnetically confined fusion plasmas. We show that our multigrid methods can achieve near textbook efficiency on fully implicit resistive MHD simulations.

  7. Restaurant No. 1 fully renovated

    CERN Multimedia

    2007-01-01

    The Restaurant No. 1 team. After several months of patience and goodwill on the part of our clients, we are delighted to announce that the major renovation work which began in September 2006 has now been completed. From 21 May 2007 we look forward to welcoming you to a completely renovated restaurant area designed with you in mind. The restaurant team wishes to thank all its clients for their patience and loyalty. Particular attention has been paid in the new design to creating a spacious serving area and providing a wider choice of dishes. The new restaurant area has been designed as an open-plan space to enable you to view all the dishes before making your selection and to move around freely from one food access point to another. It comprises user-friendly areas that fully comply with hygiene standards. From now on you will be able to pick and choose to your heart's content. We invite you to try out wok cooking or some other speciality. Or select a pizza or a plate of pasta with a choice of two sauces fr...

  8. Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

    International Nuclear Information System (INIS)

    Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

    2004-01-01

    Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0

  9. Magnetic phase diagram of Ho/Er alloys

    DEFF Research Database (Denmark)

    Cowley, R.A.; Simpson, J.A.; Bryn-Jacobsen, C.

    1998-01-01

    The magnetic structures of a series of Ho/Er alloys have been determined by neutron-diffraction techniques. The alloys were prepared as thin films (10000 Angstrom thick) by molecular beam epitaxy, and are single crystals with a mosaic spread of about 0.2 degrees. A variety of magnetic structures...

  10. Role of La doping for topological Hall effect in epitaxial EuO films

    Science.gov (United States)

    Yun, Yu; Ma, Yang; Su, Tang; Xing, Wenyu; Chen, Yangyang; Yao, Yunyan; Cai, Ranran; Yuan, Wei; Han, Wei

    2018-03-01

    We report the critical role of La doping in the topological Hall effect observed in L axE u1 -xO thin films (˜50 nm ) grown by molecular beam epitaxy. When the La doping exceeds 0.036, topological Hall effect emerges, which we attribute to the formation of magnetic skyrmions. Besides, the La doping is found to play a critical role in determining the phases, densities, and sizes of the skyrmions in the L axE u1 -xO thin films. The maximum region of the skyrmion phase diagram is observed on the L a0.1E u0.9O thin film. As the La doping increases, the skyrmion density increases while the skyrmion size decreases. Our findings demonstrate the important role of La doping for the skyrmions in EuO films, which could be important for future studies of magnetic skyrmions in Heisenberg ferromagnets.

  11. Chemical modification of epitaxial graphene: spontaneous grafting of aryl groups.

    Science.gov (United States)

    Bekyarova, Elena; Itkis, Mikhail E; Ramesh, Palanisamy; Berger, Claire; Sprinkle, Michael; de Heer, Walt A; Haddon, Robert C

    2009-02-04

    The addition of nitrophenyl groups to the surface of few-layer epitaxial graphene (EG) by the formation of covalent carbon-carbon bonds changed the electronic structure and transport properties of the EG from near-metallic to semiconducting.

  12. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  13. Wood construction and magnetic characteristics of impregnated type magnetic wood

    International Nuclear Information System (INIS)

    Oka, Hideo; Hojo, Atsushi; Seki, Kyoushiro; Takashiba, Toshio

    2002-01-01

    The results of experiments involving the AC and DC magnetic characteristics of impregnated type magnetic wood were studied by taking into consideration the wood construction and fiber direction. The experimental results show that the sufficient amount of impregnated magnetic fluid varies depending on the fiber direction and length, and the grain face of the wood material. The impregnated type magnetic wood sample that is fully impregnated by magnetic fluid has a 60% saturation magnetization compared to the saturation magnetization of magnetic fluid. Samples for which the wood fiber direction was the same as the direction of the magnetic path had a higher magnetization intensity and permeability

  14. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  15. The fully Mobile City Government Project (MCity)

    DEFF Research Database (Denmark)

    Scholl, Hans; Fidel, Raya; Mai, Jens Erik

    2006-01-01

    The Fully Mobile City Government Project, also known as MCity, is an interdisciplinary research project on the premises, requirements, and effects of fully mobile, wirelessly connected applications (FWMC). The project will develop an analytical framework for interpreting the interaction...

  16. Epitaxial lateral overgrowth - a tool for dislocation blockade in multilayer system

    International Nuclear Information System (INIS)

    Zytkiewicz, Z.R.

    1998-01-01

    Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case od GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metalorganic vapour phase epitaxy will be underlined. (author)

  17. Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    T. Young

    2018-02-01

    Full Text Available We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ∼50 nm thick grown on (001 LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T′ phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T′ phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T′-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

  18. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    Energy Technology Data Exchange (ETDEWEB)

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  19. Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

    2008-01-01

    a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid...... optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown...

  20. Magnetic actuators and sensors

    CERN Document Server

    Brauer, John R

    2014-01-01

    An accessible, comprehensive guide on magnetic actuators and sensors, this fully updated second edition of Magnetic Actuators and Sensors includes the latest advances, numerous worked calculations, illustrations, and real-life applications. Covering magnetics, actuators, sensors, and systems, with updates of new technologies and techniques, this exemplary learning tool emphasizes computer-aided design techniques, especially magnetic finite element analysis, commonly used by today's engineers. Detailed calculations, numerous illustrations, and discussions of discrepancies make this text an inva

  1. Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gouder, S. [IM2NP Aix-Marseille Universités, UMR CNRS n°7334, Faculté des Sciences St-Jérôme - Case 142, 13397 Marseille Cedex 20 France (France); Electronics Department, University Hadj Lakhdar, Batna 05000 (Algeria); Mahamdi, R. [Electronics Department, University Hadj Lakhdar, Batna 05000 (Algeria); Aouassa, M.; Escoubas, S.; Favre, L.; Ronda, A.; Berbezier, I. [IM2NP Aix-Marseille Universités, UMR CNRS n°7334, Faculté des Sciences St-Jérôme - Case 142, 13397 Marseille Cedex 20 France (France)

    2014-01-01

    Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow planar and fully relaxed Ge membranes. The single crystal Ge layers have been deposited by molecular beam epitaxy (MBE) on PS substrate. During deposition, the pore network of PS layers has been filled with Ge. We investigate the structure and morphology of PS as fabricated and after annealing at various temperatures. We show that the PS crystalline lattice is distorted and expanded in the direction perpendicular to the substrate plane due to the presence of chemisorbed –OH. An annealing at high temperature (> 500 °C), greatly changes the PS morphology and structure. This change is marked by an increase of the pore diameter while the lattice parameter becomes tensily strained in the plane (compressed in the direction perpendicular). The morphology and structure of Ge layers are investigated by transmission electron microscopy, high resolution X-ray diffraction and atomic force microscopy as a function of the deposition temperature and deposited thickness. The results show that the surface roughness, level of relaxation and Si-Ge intermixing (Ge content) depend on the growth temperature and deposited thickness. Two sub-layers are distinguished: the layer incorporated inside the PS pores (high level of intermixing) and the layer on top of the PS surface (low level of intermixing). When deposited at temperature > 500 °C, the Ge layers are fully relaxed with a top Si{sub 1−x}Ge{sub x} layer x = 0.74 and a very flat surface. Such layer can serve as fully relaxed ultra-thin SiGe pseudo-substrate with high Ge content. The epitaxy of Ge on sacrificial soft PS pseudo-substrate in the experimental conditions described here provides an easy way to fabricate fully relaxed SiGe pseudo-substrates. Moreover, Ge thin films epitaxially deposited by MBE on PS could be used as relaxed pseudo-substrate in conventional microelectronic technology. - Highlights: • We have developed a rapid

  2. Epitaxial exchange-bias systems: From fundamentals to future spin-orbitronics

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei; Krishnan, Kannan M.

    2016-07-01

    Exchange bias has been investigated for more than half a century and several insightful reviews, published around the year 2000, have already summarized many key experimental and theoretical aspects related to this phenomenon. Since then, due to developments in thin-film fabrication and sophisticated characterization methods, exchange bias continues to show substantial advances; in particular, recent studies on epitaxial systems, which is the focus of this review, allow many long-standing mysteries of exchange bias to be unambiguously resolved. The advantage of epitaxial samples lies in the well-defined interface structures, larger coherence lengths, and competing magnetic anisotropies, which are often negligible in polycrystalline samples. Beginning with a discussion of the microscopic spin properties at the ferromagnetic/antiferromagnetic interface, we correlate the details of spin lattices with phenomenological anisotropies, and finally connect the two by introducing realistic measurement approaches and models. We conclude by providing a brief perspective on the future of exchange bias and related studies in the context of the rapidly evolving interest in antiferromagnetic spintronics.

  3. Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy.

    Science.gov (United States)

    Amrillah, Tahta; Bitla, Yugandhar; Shin, Kwangwoo; Yang, Tiannan; Hsieh, Ying-Hui; Chiou, Yu-You; Liu, Heng-Jui; Do, Thi Hien; Su, Dong; Chen, Yi-Chun; Jen, Shien-Uang; Chen, Long-Qing; Kim, Kee Hoon; Juang, Jenh-Yih; Chu, Ying-Hao

    2017-06-27

    Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate clamping effect still remains a major hurdle in realizing the ultimate magnetoelectric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric-ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. In this study, we investigated the magnetoelectric coupling in a self-assembled BiFeO 3 (BFO)-CoFe 2 O 4 (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate clamping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO-CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm·Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.

  4. Optical properties of ferroelectric epitaxial K.sub.0.5./sub.Na.sub.0.5./sub.NbO.sub.3./sub. films in visible to ultraviolet range

    Czech Academy of Sciences Publication Activity Database

    Chernova, Ekaterina; Pacherová, Oliva; Kocourek, Tomáš; Jelínek, Miroslav; Dejneka, Alexandr; Tyunina, Marina

    2016-01-01

    Roč. 11, č. 4 (2016), 1-9, č. článku e0153261. E-ISSN 1932-6203 R&D Projects: GA ČR GA15-13778S Institutional support: RVO:68378271 Keywords : optical properties * ferroelectric * epitaxial films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.806, year: 2016

  5. Biaxial magnetic grain alignment

    International Nuclear Information System (INIS)

    Staines, M.; Genoud, J.-Y.; Mawdsley, A.; Manojlovic, V.

    2000-01-01

    Full text: We describe a dynamic magnetic grain alignment technique which can be used to produce YBCO thick films with a high degree of biaxial texture. The technique is, however, generally applicable to preparing ceramics or composite materials from granular materials with orthorhombic or lower crystal symmetry and is therefore not restricted to superconducting applications. Because magnetic alignment is a bulk effect, textured substrates are not required, unlike epitaxial coated tape processes such as RABiTS. We have used the technique to produce thick films of Y-247 on untextured silver substrates. After processing to Y-123 the films show a clear enhancement of critical current density relative to identically prepared untextured or uniaxially textured samples. We describe procedures for preparing materials using magnetic biaxial grain alignment with the emphasis on alignment in epoxy, which can give extremely high texture. X-ray rocking curves with FWHM of as little as 1-2 degrees have been measured

  6. Epitaxial growth of zinc oxide thin films on silicon

    International Nuclear Information System (INIS)

    Jin Chunming; Narayan, Roger; Tiwari, Ashutosh; Zhou Honghui; Kvit, Alex; Narayan, Jagdish

    2005-01-01

    Epitaxial zinc oxide thin films were grown on Si(111) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(111) heterostructure: ZnO[0001] parallel AlN[0001] parallel Si[111] along the growth direction, and ZnO[21-bar 1-bar 0] parallel AlN[21-bar 1-bar 0] parallel Si[011-bar] along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(111) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(111) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0001] parallel MgO/TiN/Si[111] along the growth direction and ZnO[21-bar 1-bar 0] parallel MgO/TiN/Si[011-bar] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission

  7. Giant electric field controlled magnetic anisotropy in epitaxial BiFeO3-CoFe2O4 thin film heterostructures on single crystal Pb(Mg1/3Nb2/3)0.7Ti0.3O3 substrate

    Science.gov (United States)

    Wang, Zhiguang; Yang, Yaodong; Viswan, Ravindranath; Li, Jiefang; Viehland, D.

    2011-07-01

    We have deposited self-assembled BiFeO3 (BFO)-CoFe2O4 (CFO) thin films on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) substrates and studied the change in magnetic anisotropy under different strain conditions induced by an applied electric field. After electric field poling, we observed (i) giant magnetization change: magnetization of original CFO phase is three times larger than that of strained one and (ii) magnetic force microscopy line profiles that exhibited significant change in the CFO magnetic domain response in accordance to magnetization-field (M-H) loops. Together, these results demonstrate good control of the magnetic properties of CFO via an electric field induced strain.

  8. Structure of epitaxial SrIrO.sub.3./sub. perovskite studied by interference between X-ray waves diffracted by the substrate and the thin film

    Czech Academy of Sciences Publication Activity Database

    Horák, L.; Kriegner, D.; Liu, J.; Frontera, C.; Martí, Xavier; Holý, V.

    2017-01-01

    Roč. 50, Apr (2017), s. 385-398 ISSN 1600-5767 R&D Projects: GA ČR GB14-37427G; GA MŠk(CZ) LG13058 Institutional support: RVO:68378271 Keywords : perovskites * epitaxial layers * X-ray diffraction * interference Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.495, year: 2016

  9. Anisotropic magnetoresistance across Verwey transition in charge ordered Fe3O4 epitaxial films

    KAUST Repository

    Liu, Xiang

    2017-12-26

    The anisotropic magnetoresistance (AMR) near the Verwey temperature (T-V) is investigated in charge ordered Fe3O4 epitaxial films. When the temperature continuously decreases below T-V, the symmetry of AMR in Fe3O4(100) film evolves from twofold to fourfold at a magnetic field of 50 kOe, where the magnetic field is parallel to the film surface, whereas AMR in Fe3O4(111) film maintains twofold symmetry. By analyzing AMR below T-V, it is found that the Verwey transition contains two steps, including a fast charge ordering process and a continuous formation process of trimeron, which is comfirmed by the temperature-dependent Raman spectra. Just below T-V, the twofold AMR in Fe3O4(100) film originates from uniaxial magnetic anisotropy. The fourfold AMR at a lower temperature can be ascribed to the in-plane trimerons. By comparing the AMR in the films with two orientations, it is found that the trimeron shows a smaller resistivity in a parallel magnetic field. The field-dependent AMR results show that the trimeron-sensitive field has a minimum threshold of about 2 kOe.

  10. Characterization of GaN/AlGaN epitaxial layers grown by ...

    Indian Academy of Sciences (India)

    of the native substrate, GaN epitaxial layers are generally grown on sapphire or. SiC substrate with lattice and thermal mismatch. Growth of GaN epitaxial layers on such substrates, by using a low-temperature nucleation layer demonstrated a good crystal quality [4]. Remarkable improvement in epitaxial material quality is.

  11. Growth and characterization of Hg 1– Cd Te epitaxial films by ...

    Indian Academy of Sciences (India)

    Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

  12. Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers

    KAUST Repository

    Li, Zirun

    2015-02-02

    Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.

  13. Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

    KAUST Repository

    Mi, Wenbo

    2013-06-01

    Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  14. Rare earth permanent magnet with easy magnetization

    Energy Technology Data Exchange (ETDEWEB)

    Kim, A.S.; Camp, F.E. [YBM Magnex, Inc., Newtown, PA (United States)

    1998-07-01

    Rare earth permanent magnets have high energy products and coercivities, and thus the volume miniaturization of magnetic devices has been possible with improved magnetic performance. Although the high energy products of these rare earth permanent magnets provide substantial advantages for magnetic design and application, the strong magnetic force of the magnetized magnets makes assembly difficult. Therefore, a special device is needed to assemble the magnetized magnets. On the other hand, unmagnetized magnets are assembled and then they are magnetized. The assembled magnets are generally more difficult to magnetize than unassembled magnets because a much less effective magnetic field may be applied to them. This is particularly true for the rare earth permanent magnets because they usually need a much higher magnetic field to be fully magnetized than alnico or ferrite magnets. To obtain optimum magnetic properties, the required minimum magnetizing fields for SmCo{sub 5}, Sm{sub 2}TM{sub 17} and Nd{sub 2}Fe{sub 14}B magnets were reported as 25-30 kOe, 45-60 kOe and 25-30 kOe, respectively. If the required magnetizing field for full saturation could be lowered, the effective utilization of magnetic properties would be maximized and the magnetic design option could be expanded with reduced restrictions. To meet this demand, we have sought to lower the field required for full magnetic saturation, and found that an increase in Dy content in R-(Fe,Co,Cu)-B type magnets lowers the field required for full saturation as well as improves the temperature stability. By increasing the H{sub ci} with Dy addition from 14 kOe to 24 and 34 kOe, the field required for full magnetic saturation decreases from about 20 to 15 and 10 kOe, respectively. This dual benefit will open up new application areas with more freedom for magnet design options. The mechanism for the lower magnetizing fields will be discussed. (orig.)

  15. Tunable magnetotransport in Fe/hBN/graphene/hBN/Pt(Fe) epitaxial multilayers

    Science.gov (United States)

    Magnus Ukpong, Aniekan

    2018-03-01

    Theoretical and computational analysis of the magnetotransport properties and spin-transfer torque field-induced switching of magnetization density in vertically-stacked multilayers is presented. Using epitaxially-capped free layers of Pt and Fe, atom-resolved magnetic moments and spin-transfer torques are computed at finite bias. The calculations are performed within linear response approximation to the spin-density reformulation of the van der Waals density functional theory. Dynamical spin excitations are computed as a function of a spin-transfer torque induced magnetic field along the magnetic easy axis, and the corresponding spin polarization perpendicular to the easy axis is obtained. Bias-dependent giant anisotropic magnetoresistance of up to 3200% is obtained in the nonmagnetic-metal-capped Fe/hBN/graphene/hBN/Pt multilayer architecture. Since this specific heterostructure is not yet fabricated and characterized, the predicted high performance has not been demonstrated experimentally. Nevertheless, similar calculations performed on the Fe/hBN/Co stack show that the tunneling magnetoresistance obtained at the Fermi-level is in excellent agreement with results of recent magnetotransport measurements on magnetic tunnel junctions that contain the monolayer hBN tunnel region. The magnitude of the spin-transfer torque is found to increase as the tunneling spin current increases, and this activates the magnetization switching process due to increased charge accumulation. This mechanism causes substantial spin backflow, which manifests as rapid undulations in the bias-dependent tunneling spin currents. The implication of these findings on the design of nanoscale spintronic devices with spin-transfer torque tunable magnetization density is discussed. Insights derived from this study are expected to enhance the prospects for developing and integrating artificially assembled van der Waals multilayer heterostructures as the preferred material platform for efficient

  16. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  17. Bismuth distribution in InSb/Bi epitaxial layers

    International Nuclear Information System (INIS)

    Lantsov, A.F.; Akchurin, R.Kh.; Zinov'ev, V.G.

    1981-01-01

    Bismuth distribution in epitaxial layers of InSb/Bi, prepared by liquid-phase epitaxy (LPE) on InSb sublayers, is studied. The solution-melt, crystallization is carried out from the compositions corresponded to the cross sections InSb-Bi, InSb-InBi and InSb-In 2 Bi of ternary system In-Sb-Bi and changed in the limits, determined by the state diagram liquidus in the temperature range from 220 to 450 deg C. The temperature dependence of the coefficients of bismuth distribution in epitaxial layers of InSb(Bi) is specified. The dependence of bismuth concentration on the composition of initial liquid phase is established [ru

  18. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

    Science.gov (United States)

    Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F

    2014-12-02

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

  19. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Novák, Vít; Martí, X.; Cukr, Miroslav; Máca, František; Shick, Alexander; Mašek, Jan; Horodyská, P.; Němec, P.; Holý, V.; Zemek, Josef; Kužel, Petr; Němec, I.; Gallagher, B. L.; Campion, R. P.; Foxon, C. T.; Wunderlich, Joerg

    2011-01-01

    Roč. 83, č. 3 (2011), , , "035321-1"-"035321-6" ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE; European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : antiferromagnetic semiconductors * spintronics * molecular beam epitaxy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

  20. Tailoring the electronic properties of Ca2RuO4 via epitaxial strain

    Science.gov (United States)

    Dietl, C.; Sinha, S. K.; Christiani, G.; Khaydukov, Y.; Keller, T.; Putzky, D.; Ibrahimkutty, S.; Wochner, P.; Logvenov, G.; van Aken, P. A.; Kim, B. J.; Keimer, B.

    2018-01-01

    We establish strain engineering of ruthenium oxides as a method to controllably induce phase transitions between electronic ground states with vastly different electrical and magnetic properties. Specifically, we show that the epitaxial strain acting on Ca2RuO4 thin films on NdCaAlO4 (110), LaAlO3 (100), and LaSrAlO4 (001) substrates induces a transition from the Mott-insulating phase of bulk Ca2RuO4 into a metallic phase. Magnetometry and spin-polarized neutron reflectometry reveal a low-temperature, small-moment ferromagnetic state in Ca2RuO4 films on LaAlO3 (100) and LaSrAlO4(001). Thin-film structures may open up new ways to investigate and utilize the electronic response of ruthenates to lattice modification.

  1. Seed layer technique for high quality epitaxial manganite films

    Directory of Open Access Journals (Sweden)

    P. Graziosi

    2016-08-01

    Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  2. Giant flexoelectric effect in ferroelectric epitaxial thin films.

    Science.gov (United States)

    Lee, D; Yoon, A; Jang, S Y; Yoon, J-G; Chung, J-S; Kim, M; Scott, J F; Noh, T W

    2011-07-29

    We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves. © 2011 American Physical Society

  3. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

    Science.gov (United States)

    Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

    2016-07-01

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

  4. Nanoscale x-ray magnetic circular dichroism probing of electric-field-induced magnetic switching in multiferroic nanostructures

    Science.gov (United States)

    Zhao, T.; Scholl, A.; Zavaliche, F.; Zheng, H.; Barry, M.; Doran, A.; Lee, K.; Cruz, M. P.; Ramesh, R.

    2007-03-01

    The magnetic structure as well as its response to an external electric field were studied in ferrimagnetic CoFe2O4 nanopillars embedded in an epitaxial ferroelectric BiFeO3 film using photoemission electron microscopy and x-ray magnetic circular dichroism. Magnetic switching was observed in both Co and Fe magnetic sublattices after application of an electric field. About 50% of the CoFe2O4 nanopillars were measured to switch their magnetization with the electric field, implying an elastic-mediated electric-field-induced magnetic anisotropy change.

  5. Long lived excitations in fully compensated antiferromagnetic nanomagnets

    Science.gov (United States)

    Burgess, Jacob; Malavolti, Luigi; Rolf-Pissarczyk, Steffen; McMurtrie, Gregory; Yan, Shichao; Loth, Sebastian

    Extensive interest is directed towards finding long lived states in atomic scale magnetic structures. Applications include classical and quantum spintronics schemes. Here we use a recently described method of applying a single atom exchange bias, using a magnetic scanning tunneling microscope tip, to control the quantum states of fully compensated nano-antiferromagnetic atomic chains. We apply time-resolved spin-polarized scanning tunneling microscopy to measure the energy relaxation of the chains as a function of the tip interaction strength. With strong coupling to the microscope tip, the excited state lifetimes can extend to the millisecond scale. Center for Free Electron Laser Science, Max Planck Society, Deutsches Elektronen-Synchrotron, Alexander von Humboldt Foundation, Natural Sciences and Engineering Research Council of Canada.

  6. SOI Fully complementary BI-JFET-MOS technology for analog-digital applications with vertical BJT's

    International Nuclear Information System (INIS)

    Delevoye, E.; Blanc, J.P.; Bonaime, J.; Pontcharra, J. de; Gautier, J.; Martin, F.; Truche, R.

    1993-01-01

    A silicon-on-insulator, fully complementary, Bi-JFET-MOS technology has been developed for realizing multi-megarad hardened mixed analog-digital circuits. The six different active components plus resistors and capacitors have been successfully integrated in a 25-mask process using SIMOX substrate and 1 μm thick epitaxial layer. Different constraints such as device compatibility, complexity not higher than BiCMOS technology and breakdown voltages suitable for analog applications have been considered. Several process splits have been realized and all the characteristics presented here have been measured on the same split. P + gate is used for PMOS transistor to get N and PMOST symmetrical characteristics. Both NPN and PNP vertical bipolar transistors with poly-emitters show f T > 5 GHz. 2-separated gate JFET's need no additional mask. (authors). 9 figs., 1 tab

  7. Electrically Controllable Spontaneous Magnetism in Nanoscale Mixed Phase Multiferroics

    Energy Technology Data Exchange (ETDEWEB)

    He, Q.; Chu, Y. H.; Heron, J. T.; Yang, S. Y.; Wang, C. H.; Kuo, C. Y.; Lin, H. J.; Yu, P.; Liang, C. W.; Zeches, R. J.; Chen, C. T.; Arenholz, E.; Scholl, A.; Ramesh, R.

    2010-08-02

    The emergence of enhanced spontaneous magnetic moments in self-assembled, epitaxial nanostructures of tetragonal (T-phase) and rhombohedral phases (R-phase) of the multiferroic BiFeO{sub 3} system is demonstrated. X-ray magnetic circular dichroism based photoemission electron microscopy (PEEM) was applied to investigate the local nature of this magnetism. We find that the spontaneous magnetization of the R-phase is significantly enhanced above the canted antiferromagnetic moment in the bulk phase, as a consequence of a piezomagnetic coupling to the adjacent T-phase and the epitaxial constraint. Reversible electric field control and manipulation of this magnetic moment at room temperature is shown using a combination of piezoresponse force microscopy and PEEM studies.

  8. Effect of annealing on magnetic exchange coupling in CoPt/Co bilayer thin films

    International Nuclear Information System (INIS)

    Kim, J.; Barmak, K.; De Graef, M.; Lewis, L. H.; Crew, D. C.

    2000-01-01

    Thin film CoPt/Co bilayers have been prepared as a model system to investigate the relationship between microstructure and exchange coupling in two-phase nanocomposite permanent magnets. The bilayers were prepared by magnetron sputter deposition of near-equiatomic CoPt with a thickness of 25 nm onto oxidized Si wafers. In the as-deposited state, CoPt had the A1 (fcc) structure and was magnetically soft. Before reinsertion into the sputtering chamber for the deposition of 2.8-16.7 nm thick Co layers, the CoPt films were annealed at 700 degree sign C for 120 min to produce the magnetically hard, fully ordered L1 0 phase. The presence of exchange coupling in the bilayers was verified by magnetic hysteresis and recoil measurements and showed that only for Co thicknesses below 6.3 nm was this layer (in its as-deposited state) coupled through its full thickness to the CoPt layer. Annealing the bilayer samples at 300 and 550 degree sign C for 20 min resulted in improvement of the interlayer magnetic coupling and produced clear differences in the magnetic reversal coherency and the recoil curves. However, for some samples, the improved coupling resulted in a decrease in coercivity, indicating that there is an optimum in the coupling strength for the attainment of high coercivity. Transmission electron microscopy studies of the bilayers in plan view showed that the increased interlayer coupling with annealing was a result of improved granular epitaxy of Co to CoPt. (c) 2000 American Institute of Physics

  9. Fully Depleted Charge-Coupled Devices

    Energy Technology Data Exchange (ETDEWEB)

    Holland, Stephen E.

    2006-05-15

    We have developed fully depleted, back-illuminated CCDs thatbuild upon earlier research and development efforts directed towardstechnology development of silicon-strip detectors used inhigh-energy-physics experiments. The CCDs are fabricated on the same typeof high-resistivity, float-zone-refined silicon that is used for stripdetectors. The use of high-resistivity substrates allows for thickdepletion regions, on the order of 200-300 um, with corresponding highdetection efficiency for near-infrared andsoft x-ray photons. We comparethe fully depleted CCD to thep-i-n diode upon which it is based, anddescribe the use of fully depleted CCDs in astronomical and x-ray imagingapplications.

  10. Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

    KAUST Repository

    Ganapathy, R.

    2010-01-21

    Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

  11. Robust Epitaxial Al Coating of Reclined InAs Nanowires.

    Science.gov (United States)

    Kang, Jung-Hyun; Grivnin, Anna; Bor, Ella; Reiner, Jonathan; Avraham, Nurit; Ronen, Yuval; Cohen, Yonatan; Kacman, Perla; Shtrikman, Hadas; Beidenkopf, Haim

    2017-12-13

    It was recently shown that in situ epitaxial aluminum coating of indium arsenide nanowires is possible and yields superior properties relative to ex-situ evaporation of aluminum ( Nat. Mater. 2015 , 14 , 400 - 406 ). We demonstrate a robust and adaptive epitaxial growth protocol satisfying the need for producing an intimate contact between the aluminum superconductor and the indium arsenide nanowire. We show that the (001) indium arsenide substrate allows successful aluminum side-coating of reclined indium arsenide nanowires that emerge from (111)B microfacets. A robust, induced hard superconducting gap in the obtained indium arsenide/aluminum core/partial shell nanowires is clearly demonstrated. We compare epitaxial side-coating of round and hexagonal cross-section nanowires and find the surface roughness of the round nanowires to induce a more uniform aluminum profile. Consequently, the extended aluminum grains result in increased strain at the interface with the indium arsenide nanowire, which is found to induce dislocations penetrating into round nanowires only. A unique feature of proposed growth protocol is that it supports in situ epitaxial deposition of aluminum on all three arms of indium arsenide nanowire intersections in a single growth step. Such aluminum coated intersections play a key role in engineering topologically superconducting networks required for Majorana based quantum computation schemes.

  12. Electrical properties of epitaxially grown VOx thin films

    NARCIS (Netherlands)

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  13. Crystallization engineering as a route to epitaxial strain control

    Directory of Open Access Journals (Sweden)

    Andrew R. Akbashev

    2015-10-01

    Full Text Available The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001SrTiO3 and (001LaAlO3 substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001BiFeO3 phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001SrTiO3 results in a coherently strained film, the same films obtained on (001LaAlO3 showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001SrTiO3. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

  14. Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

    Science.gov (United States)

    Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

    2018-04-01

    In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

  15. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.

    1991-11-01

    Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

  16. Strain-induced properties of epitaxial VOx thin films

    NARCIS (Netherlands)

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  17. Magnetic depth profiling of an exchange bias system: X-ray resonant magnetic reflectivity of FeMn/Co

    Energy Technology Data Exchange (ETDEWEB)

    Brueck, Sebastian; Ferreras-Paz, Valeriano; Goering, Eberhard; Schuetz, Gisela [Max-Planck-Institut fuer Metallforschung, Heisenbergstrasse 3, D-70569 Stuttgart (Germany)

    2007-07-01

    X-ray resonant magnetic reflectivity (XRMR) extends reflectivity by the X-ray magnetic circular dichroism as additional contrast thus providing element selective magnetic depth information. This makes it a perfect tool to investigate magnetic coupling effects in multi-layered systems. Such systems are for example ferromagnet-antiferromagnet bilayers which can show an exchange coupling between the two layers, the so called exchange bias effect. We present results on Co/FeMn bilayers which have been investigated by XRMR at the BESSY II synchrotron, Berlin. The bilayers were prepared by molecular beam epitaxy on a Cu(100) single crystal which ensures epitaxial growth of both FeMn (in the antiferromagnetic phase) and Co. The magnetic depth profile for room temperature and for 120 K is investigated with respect to changes of the exchange coupling.

  18. Direct measurement of magnetoelectric exchange in self-assembled epitaxial BiFeO3-CoFe2O4 nanocomposite thin films

    Science.gov (United States)

    Yan, Li; Xing, Zengping; Wang, Zhiguang; Wang, Tao; Lei, Guangyin; Li, Jiefang; Viehland, D.

    2009-05-01

    We report the direct measurement of a magnetoelectric (ME) exchange between magnetostrictive CoFe2O4 nanopillars in a piezoelectric BiFeO3 matrix for single-layer nanocomposite epitaxial thin films grown on (001) SrTiO3 substrates with SrRuO3 bottom electrodes. The ME coefficient was measured by a magnetic cantilever method and had a maximum value of ˜20 mV/cm Oe. The films possessed saturation polarization (60 μC/cm2) and magnetization (410 emu/cc) properties equivalent to bulk values, with typical hysteresis loops.

  19. Epitaxial effects in thin films of high-Tc cuprates with the K2NiF4 structure

    Science.gov (United States)

    Naito, Michio; Sato, Hisashi; Tsukada, Akio; Yamamoto, Hideki

    2018-03-01

    La2-xSrxCuO4 (LSCO) and La2-xBaxCuO4 (LBCO) have been recognized as the archetype materials of "hole-doped" high-Tc superconductors. Their crystal structures are relatively simple with a small number of constituent cation elements. In addition, the doping level can be varied by the chemical substitution over a wide range enough to obtain the full spectrum of doping-dependent electronic and magnetic properties. These attractive features have dedicated many researchers to thin-film growth of LSCO and LBCO. The critical temperature (Tc) of LSCO and LBCO is sensitive to strain as manifested by a positive pressure coefficient of Tc in bulk samples. In general, films are strained if they are grown on lattice-mismatched substrates (epitaxial strain). Early attempts (before 1997) at the growth of LSCO and LBCO films resulted in depressed Tc below 30 K as they were grown on a commonly used SrTiO3 substrate (in-plane lattice parameter asub = 3.905 Å): the in-plane lattice parameters of LSCO and LBCO are ≤3.80 Å, and hence tensile epitaxial strain is introduced. The situation was changed by the use of LaSrAlO4 substrates with a slightly shorter in-plane lattice constant (asub = 3.756 Å). On LaSrAlO4 substrates, the Tc reaches 45 K in La1.85Sr0.15CuO4, 47 K in La1.85Ba0.15CuO4, and 56 K in ozone-oxidized La2CuO4+δ films, substantially higher than the Tc's of the bulk compounds. The Tc increase in La1.85Sr0.15CuO4 films on LaSrAlO4 and decrease on SrTiO3 are semi-quantitatively in accord with the phenomenological estimations based on the anisotropic strain coefficients of Tc (dTc/dεi). In this review article, we describe the growth and properties of films of cuprates having the K2NiF4 structure, mainly focusing on the increase/decrease of Tc by epitaxial strain and quasi-stable phase formation by epitaxial stabilization. We further extract the structural and/or physical parameters controlling Tc toward microscopic understanding of the variation of Tc by epitaxial strain.

  20. NEW RSW & Wall Medium Fully Tetrahedral Grid

    Data.gov (United States)

    National Aeronautics and Space Administration — New Medium Fully Tetrahedral RSW Grid with viscous wind tunnel wall at the root. This grid is for a node-based unstructured solver. Medium Tet: Quad Surface Faces= 0...

  1. NEW RSW & Wall Fine Fully Tetrahedral Grid

    Data.gov (United States)

    National Aeronautics and Space Administration — NEW RSW Fine Fully Tetrahedral Grid with Viscous Wind Tunnel wall at the root. This grid is for a node-based unstructured solver. Note that the CGNS file is very...

  2. High-voltage-compatible, fully depleted CCDs

    Energy Technology Data Exchange (ETDEWEB)

    Holland, Stephen E.; Bebek, Chris J.; Dawson, Kyle S.; Emes, JohnE.; Fabricius, Max H.; Fairfield, Jessaym A.; Groom, Don E.; Karcher, A.; Kolbe, William F.; Palaio, Nick P.; Roe, Natalie A.; Wang, Guobin

    2006-05-15

    We describe charge-coupled device (CCD) developmentactivities at the Lawrence Berkeley National Laboratory (LBNL).Back-illuminated CCDs fabricated on 200-300 mu m thick, fully depleted,high-resistivity silicon substrates are produced in partnership with acommercial CCD foundry.The CCDs are fully depleted by the application ofa substrate bias voltage. Spatial resolution considerations requireoperation of thick, fully depleted CCDs at high substrate bias voltages.We have developed CCDs that are compatible with substrate bias voltagesof at least 200V. This improves spatial resolution for a given thickness,and allows for full depletion of thicker CCDs than previously considered.We have demonstrated full depletion of 650-675 mu m thick CCDs, withpotential applications in direct x-ray detection. In this work we discussthe issues related to high-voltage operation of fully depleted CCDs, aswell as experimental results on high-voltage-compatible CCDs.

  3. Perpendicularly magnetized Mn x Ga films: promising materials for future spintronic devices, magnetic recording and permanent magnets

    Science.gov (United States)

    Zhu, Lijun; Zhao, Jianhua

    2013-05-01

    In this article, we review the recent progress in synthesis, characterization and related spintronic devices of tetragonal Mn x Ga alloys with L10 or D022 ordering. After a brief introduction to the growing demands for perpendicularly magnetized materials and the prospective candidate of Mn x Ga, we focus on lattice structures and synthesis of Mn x Ga bulks, and epitaxial growth, structural characterization and magnetic properties of Mn x Ga films. Then we discuss effective ways to tailor and improve the structure and magnetism for possible applications in spintronics, magnetic recording and permanent magnets. Finally, we outline the recent progress in spin polarization, magnetic damping, magneto-optical and magneto-transport behaviors and thermal and chemical stability of Mn x Ga films and related spintronic devices like magnetic tunneling junctions, spin valves and spin injectors into semiconductors.

  4. Fully Adaptive Radar Modeling and Simulation Development

    Science.gov (United States)

    2017-04-01

    AFRL-RY-WP-TR-2017-0074 FULLY ADAPTIVE RADAR MODELING AND SIMULATION DEVELOPMENT Kristine L. Bell and Anthony Kellems Metron, Inc...SMALL BUSINESS INNOVATION RESEARCH (SBIR) PHASE I REPORT. Approved for public release; distribution unlimited. See additional restrictions...2017 4. TITLE AND SUBTITLE FULLY ADAPTIVE RADAR MODELING AND SIMULATION DEVELOPMENT 5a. CONTRACT NUMBER FA8650-16-M-1774 5b. GRANT NUMBER 5c

  5. On the density of states of disordered epitaxial graphene

    International Nuclear Information System (INIS)

    Davydov, S. Yu.

    2015-01-01

    The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum

  6. Fully filamentized HTS coated conductor via striation and selective electroplating

    Energy Technology Data Exchange (ETDEWEB)

    Kesgin, Ibrahim; Majkic, Goran [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Selvamanickam, Venkat, E-mail: selva@uh.edu [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States)

    2013-03-15

    Highlights: ► Fully-filamentized coated conductor with 13-fold reduction in ac losses. ► Selective electroplating for filamentization of thick copper stabilizer. ► A twofold decrease in ac loss by filamentization of copper stabilizer. ► Absence of appreciable coupling loss contribution from electroplating. -- Abstract: A simple, cost-effective method involving top-down mechanical scribing, oxidation and bottom-up electroplating has been successfully developed to fabricate fully filamentized HTS coated conductors. The copper stabilizer layer is selectively electroplated on the superconducting filaments while the striations remain copper-free due to the formation of a resistive oxide layer in between filaments by oxidation of the striated grooves at elevated temperature in oxygen atmosphere. Magnetization AC loss measurements, performed in a frequency range of 45–500 Hz at 77 K, confirmed the expected N-fold reduction in AC loss of the filamentized tapes with no significant degradation in critical current beyond that due to the material removal from the striations (N – number of filaments). A considerable reduction in coupling AC loss was observed after high temperature annealing/oxidation of the striated tapes. Furthermore, a significant reduction in eddy current loss was achieved with selective copper electroplating, as evidenced by analyzing the field and frequency dependence of magnetization AC loss, as well as by comparing the AC loss performance of striated samples to that of non-striated samples after electroplating of copper stabilizer.

  7. Fully filamentized HTS coated conductor via striation and selective electroplating

    International Nuclear Information System (INIS)

    Kesgin, Ibrahim; Majkic, Goran; Selvamanickam, Venkat

    2013-01-01

    Highlights: ► Fully-filamentized coated conductor with 13-fold reduction in ac losses. ► Selective electroplating for filamentization of thick copper stabilizer. ► A twofold decrease in ac loss by filamentization of copper stabilizer. ► Absence of appreciable coupling loss contribution from electroplating. -- Abstract: A simple, cost-effective method involving top-down mechanical scribing, oxidation and bottom-up electroplating has been successfully developed to fabricate fully filamentized HTS coated conductors. The copper stabilizer layer is selectively electroplated on the superconducting filaments while the striations remain copper-free due to the formation of a resistive oxide layer in between filaments by oxidation of the striated grooves at elevated temperature in oxygen atmosphere. Magnetization AC loss measurements, performed in a frequency range of 45–500 Hz at 77 K, confirmed the expected N-fold reduction in AC loss of the filamentized tapes with no significant degradation in critical current beyond that due to the material removal from the striations (N – number of filaments). A considerable reduction in coupling AC loss was observed after high temperature annealing/oxidation of the striated tapes. Furthermore, a significant reduction in eddy current loss was achieved with selective copper electroplating, as evidenced by analyzing the field and frequency dependence of magnetization AC loss, as well as by comparing the AC loss performance of striated samples to that of non-striated samples after electroplating of copper stabilizer

  8. Effect of natural homointerfaces on the magnetic properties of pseudomorphic La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin film: Phase separation vs split domain structure

    Energy Technology Data Exchange (ETDEWEB)

    Congiu, Francesco [Dipartimento di Fisica e CNISM, Università di Cagliari, S.P. Monserrato-Sestu, km 0.700, I 09042 Monserrato, Cagliari (Italy); Sanna, Carla [Sardegna Ricerche, Laboratorio Energetica Elettrica, VI Strada Ovest - Z.I.Macchiareddu, I 09010 Uta, Cagliari (Italy); Maritato, Luigi [CNR-SPIN, UOS Salerno, I 84084 Fisciano, Salerno (Italy); Dipartimento di Ingegneria dell’Informazione, Ingegneria Elettrica e Matematica Applicata, Università di Salerno, I 84084 Fisciano, Salerno (Italy); Orgiani, Pasquale [CNR-SPIN, UOS Salerno, I 84084 Fisciano, Salerno (Italy); Geddo Lehmann, Alessandra, E-mail: lehmann@dsf.unica.it [Dipartimento di Fisica e CNISM, Università di Cagliari, S.P. Monserrato-Sestu, km 0.700, I 09042 Monserrato, Cagliari (Italy)

    2016-12-15

    We studied the effect of naturally formed homointerfaces on the magnetic and electric transport behavior of a heavily twinned, 40 nm thick, pseudomorphic epitaxial film of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} deposited by molecular beam epitaxy on ferroelastic LaAlO{sub 3}(001) substrate. As proved by high resolution X-ray diffraction analysis, the lamellar twin structure of the substrate is imprinted in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}. In spite of the pronounced thermomagnetic irreversibility in the DC low field magnetization, spin-glass-like character, possibly related to the structural complexity, was ruled out, on the base of AC susceptibility results. The magnetic characterization indicates anisotropic ferromagnetism, with a saturation magnetization M{sub s} = 3.2 μ{sub B}/Mn, slightly reduced with respect to the fully polarized value of 3.7 μ{sub B}/Mn. The low field DC magnetization vs temperature is non bulklike, with a two step increase in the field cooled M{sub FC}(T) branch and a two peak structure in the zero field cooled M{sub ZFC}(T) one. Correspondingly, two peaks are present in the resistivity vs temperature ρ(T) curve. With reference to the behavior of epitaxial manganites deposited on bicrystal substrates, results are discussed in terms of a two phase model, in which each couple of adjacent ferromagnetic twin cores, with bulklike T{sub C} = 370 K, is separated by a twin boundary with lower Curie point T{sub C} = 150 K, acting as barrier for spin polarized transport. The two phase scenario is compared with the alternative one based on a single ferromagnetic phase with the peculiar ferromagnetic domains structure inherent to twinned manganites films, reported to be split into interconnected and spatially separated regions with in-plane and out-of-plane magnetization, coinciding with twin cores and twin boundaries respectively.

  9. Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

    Science.gov (United States)

    Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

    2018-04-01

    Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

  10. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    Abstract. A theoretical model is presented in this paper for degree of spin polarization in a light emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different ...

  11. The structural and magnetic properties of holmium/scandium superlattices

    DEFF Research Database (Denmark)

    Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.

    1997-01-01

    The properties of Ho/Sc superlattices grown by molecular beam epitaxy (MBE) have been investigated using X-ray and neutron diffraction techniques. Structural studies reveal the novel existence of more than one a lattice parameter. Examining the magnetic properties, it is found that the Ho 4f...

  12. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    A theoretical model is presented in this paper for degree of spin polarization in alight emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different temperatures and ...

  13. Correlation of thickness and magnetization in LCMO film

    Indian Academy of Sciences (India)

    Colossal magnetoresistance; manganite; thin film; La0.67Mn0.33MnO3. ... We suggest that the difference in the magnetization under FC and ZFC conditions may be due to strain-induced anisotropy arising from the lattice mismatch between the substrate and the film or due to the shape anisotropy due to epitaxial growth.

  14. Exploration and engineering of physical properties in high-quality Sr2CrReO6 epitaxial films

    Science.gov (United States)

    Lucy, Jeremy Matthew

    Double perovskites have proven to be highly interesting materials, particularly in the past two decades, with many materials in this family exhibiting strong correlations. These materials are some of many novel complex oxides with potential spintronics application. Sr2CrReO6, in particular, is a double perovskite with one of the highest Curie temperatures of its class (> 620 K in bulk and ~510-600 K in thin films), as well as high spin polarization, ferrimagnetic behavior, and semiconducting properties. This dissertation covers recent work in exploring and tuning physical properties in epitaxial films of Sr2CrReO6. It starts by providing a background for the field of spintronics and double perovskites, bulk and thin film synthesis of Sr2CrReO6, and standard and specialized characterization techniques utilized in both university and national laboratories, and then provides reports of work on Sr2CrReO6 epitaxial films. Examples of exploration and engineering of properties of Sr2CrReO 6 include: (1) tuning of electrical resistivity, such as at T= 7 K by a factor of 18,000%, via control of oxygen partial pressure during film growth; (2) enhancement of interfacial double perovskite ordering, demonstrated with high-angle annular dark-field scanning transmission electron microscopy, via the use of double perovskite buffer layer substrates; (3) measurement of magnetization suppression near film/substrate interfaces via polarized neutron reflectometry, which reveals a reduction of thickness (from 5.6 nm to 3.6 nm) of the magnetically suppressed interface region due to buffer layer enhancement; (4) strain tunability of atomic spin and orbital moments of Cr, Re, and O atoms probed with x-ray magnetic circular dichroism, which demonstrates ferrimagnetic behavior and reveals important magnetic contributions of the oxygen sites (~0.02 muB/site); (5) strain tunability of large magnetocrystalline anisotropy via applied epitaxial strain, revealing anisotropy fields of up to 10s of

  15. Orientation-dependent physical properties of layered perovskite La1.3Sr1.7Mn2O7 epitaxial thin films

    Science.gov (United States)

    Niu, Li-Wei; Guo, Bing; Chen, Chang-Le; Luo, Bing-Cheng; Dong, Xiang-Lei; Jin, Ke-Xin

    2017-04-01

    In this paper, the resistivity and magnetization of orientation-engineered layered perovskite La1.3Sr1.7Mn2O7 epitaxial thin films have been investigated. Epitaxial thin films were deposited on single-crystalline LaAlO3 (LAO) (001), (110) and (111) substrates by pulse laser deposition (PLD) technique. It is found that only the (100)-oriented thin film performs insulator behavior, whereas the (110) and (111)-oriented thin films exhibit obvious metal-insulator transition at 70 K and between 85 and 120 K, respectively. Moreover, the same spin freezing temperature and different spin-glass-like transition temperatures have been observed in various oriented films. The observed experimental results were discussed according to the electron-transport mechanism and spin dynamics.

  16. Pillar shape modulation in epitaxial BiFeO3–CoFe2O4 vertical nanocomposite films

    Directory of Open Access Journals (Sweden)

    Dong Hun Kim

    2014-08-01

    Full Text Available Self-assembled epitaxial CoFe2O4-BiFeO3 nanocomposite films, in which pillars of CoFe2O4 grow within a single crystal BiFeO3 matrix, show both ferrimagnetism and ferroelectricity. The pillars typically have a uniform cross-section, but here two methods are demonstrated to produce a width modulation during growth by pulsed laser deposition. This was achieved by growing a blocking layer of BiFeO3 to produce layers of separated pillars or pillars with constrictions, or by changing the temperature during growth to produce bowling-pin shaped pillars. Modulated nanocomposites showed changes in their magnetic anisotropy compared to nanocomposites with uniform width. The magnetic anisotropy was interpreted as a result of magnetoelastic and shape anisotropies.

  17. Upper-critical fields of YBa2Cu3O7-δ epitaxial thin films with variable oxygen deficiency δ

    International Nuclear Information System (INIS)

    Jones, E.C.; Christen, D.K.; Thompson, J.R.; Ossandon, J.G.; Feenstra, R.; Phillips, J.M.; Siegal, M.P.

    1994-01-01

    Fluctuation analysis in the limit of high magnetic fields was performed on three epitaxial thin films of YBa 2 Cu 3 O 7-δ for various oxygen deficiencies δ c2 (T) slope of -1.7 T/K for H parallel c, consistent with previous observations of transport and magnetic properties. Moreover, the 3D scaling showed better convergence than the 2D scaling, which gave relatively low values of H c2 . In contrast, the transitions were not adequately described by either scaling for T c off the 90-K plateau; it is speculated that this is due to an extrinsic broadening of the transitions, possibly due to the lack of a complete percolation path of the ortho-I phase (δ=0)

  18. Pillar shape modulation in epitaxial BiFeO3-CoFe2O4 vertical nanocomposite films

    Science.gov (United States)

    Kim, Dong Hun; Aimon, Nicolas M.; Ross, C. A.

    2014-08-01

    Self-assembled epitaxial CoFe2O4-BiFeO3 nanocomposite films, in which pillars of CoFe2O4 grow within a single crystal BiFeO3 matrix, show both ferrimagnetism and ferroelectricity. The pillars typically have a uniform cross-section, but here two methods are demonstrated to produce a width modulation during growth by pulsed laser deposition. This was achieved by growing a blocking layer of BiFeO3 to produce layers of separated pillars or pillars with constrictions, or by changing the temperature during growth to produce bowling-pin shaped pillars. Modulated nanocomposites showed changes in their magnetic anisotropy compared to nanocomposites with uniform width. The magnetic anisotropy was interpreted as a result of magnetoelastic and shape anisotropies.

  19. Fully automated MRI-guided robotics for prostate brachytherapy

    International Nuclear Information System (INIS)

    Stoianovici, D.; Vigaru, B.; Petrisor, D.; Muntener, M.; Patriciu, A.; Song, D.

    2008-01-01

    The uncertainties encountered in the deployment of brachytherapy seeds are related to the commonly used ultrasound imager and the basic instrumentation used for the implant. An alternative solution is under development in which a fully automated robot is used to place the seeds according to the dosimetry plan under direct MRI-guidance. Incorporation of MRI-guidance creates potential for physiological and molecular image-guided therapies. Moreover, MRI-guided brachytherapy is also enabling for re-estimating dosimetry during the procedure, because with the MRI the seeds already implanted can be localised. An MRI compatible robot (MrBot) was developed. The robot is designed for transperineal percutaneous prostate interventions, and customised for fully automated MRI-guided brachytherapy. With different end-effectors, the robot applies to other image-guided interventions of the prostate. The robot is constructed of non-magnetic and dielectric materials and is electricity free using pneumatic actuation and optic sensing. A new motor (PneuStep) was purposely developed to set this robot in motion. The robot fits alongside the patient in closed-bore MRI scanners. It is able to stay fully operational during MR imaging without deteriorating the quality of the scan. In vitro, cadaver, and animal tests showed millimetre needle targeting accuracy, and very precise seed placement. The robot tested without any interference up to 7T. The robot is the first fully automated robot to function in MRI scanners. Its first application is MRI-guided seed brachytherapy. It is capable of automated, highly accurate needle placement. Extensive testing is in progress prior to clinical trials. Preliminary results show that the robot may become a useful image-guided intervention instrument. (author)

  20. The physics of epitaxial graphene on SiC(0001)

    International Nuclear Information System (INIS)

    Kageshima, H; Hibino, H; Tanabe, S

    2012-01-01

    Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to

  1. Fabrication of self-assembled epitaxial nanostructures consisting of multiferroic heterostructures

    Science.gov (United States)

    Stern, Ilan

    As the field of epitaxial, self-assembled, thin film nanostructures continues to evolve, we have seen the emergence of novel growth techniques, exciting new multiferroic heterostructures and the increase in strain control engineering. The interest in such heterostructures ranges from high speed computing and storage devices, to smart sensors and actuators. Magnetic tunneling junctions and the development of highly efficient composites in the use of photovoltaics is certainly a direction of the future of thin film physics. Through the method of pulsed laser deposition (PLD), we have developed and engineered complex multiferroic transition metal oxides. By examining the structural and physical characterization of BiFeO3-CoFe2O4 epitaxially grown on spinel MgAl2O4 (001) by way of HR-XRD, AFM, TEM SEM, SQUID, and VSM, we have added additional growth parameters, i.e., the role of substrate structure, which can be used in the control of the structural formation of spinel and perovskite multiferroic heterostructures. This additional growth parameter is a critical step in the advancement in structural control and growth morphology. Additionally, control engineering of ferromagnetic vertically aligned nanostructures (VAN's), embedded in a ferroelectric matrix was accomplished using a 1:1 molar ratio of ferromagnetic NiCO2O4 and ferroelectric BaTiO3, which is to be used in the study of electrical transport, and 3-dimensional strain control. Finally, a conducting bottom electrode (Nb-STO) was developed to allow for the out-of-plane transport measurements on the NCO-BTO heterocomposite.

  2. Fully Depleted Charge-Coupled Devices

    International Nuclear Information System (INIS)

    Holland, Stephen E.

    2006-01-01

    We have developed fully depleted, back-illuminated CCDs that build upon earlier research and development efforts directed towards technology development of silicon-strip detectors used in high-energy-physics experiments. The CCDs are fabricated on the same type of high-resistivity, float-zone-refined silicon that is used for strip detectors. The use of high-resistivity substrates allows for thick depletion regions, on the order of 200-300 um, with corresponding high detection efficiency for near-infrared and soft x-ray photons. We compare the fully depleted CCD to the p-i-n diode upon which it is based, and describe the use of fully depleted CCDs in astronomical and x-ray imaging applications

  3. CMOS current controlled fully balanced current conveyor

    Science.gov (United States)

    Chunhua, Wang; Qiujing, Zhang; Haiguang, Liu

    2009-07-01

    This paper presents a current controlled fully balanced second-generation current conveyor circuit (CF-BCCII). The proposed circuit has the traits of fully balanced architecture, and its X-Y terminals are current controllable. Based on the CFBCCII, two biquadratic universal filters are also proposed as its applications. The CFBCCII circuits and the two filters were fabricated with chartered 0.35-μm CMOS technology; with ±1.65 V power supply voltage, the total power consumption of the CFBCCII circuit is 3.6 mW. Comparisons between measured and HSpice simulation results are also given.

  4. Interfacial-strain-induced structural and polarization evolutions in epitaxial multiferroic BiFeO3 (001) thin films.

    Science.gov (United States)

    Guo, Haizhong; Zhao, Ruiqiang; Jin, Kui-Juan; Gu, Lin; Xiao, Dongdong; Yang, Zhenzhong; Li, Xiaolong; Wang, Le; He, Xu; Gu, Junxing; Wan, Qian; Wang, Can; Lu, Huibin; Ge, Chen; He, Meng; Yang, Guozhen

    2015-02-04

    Varying the film thickness is a precise route to tune the interfacial strain to manipulate the properties of the multiferroic materials. Here, to explore the effects of the interfacial strain on the properties of the multiferroic BiFeO3 films, we investigated thickness-dependent structural and polarization evolutions of the BiFeO3 films. The epitaxial growth with an atomic stacking sequence of BiO/TiO2 at the interface was confirmed by scanning transmission electron microscopy. Combining X-ray diffraction experiments and first-principles calculations, a thickness-dependent structural evolution was observed from a fully strained tetragonality to a partially relaxed one without any structural phase transition or rotated twins. The tetragonality (c/a) of the BiFeO3 films increases as the film thickness decreases, while the polarization is in contrast with this trend, and the size effect including the depolarization field plays a crucial role in this contradiction in thinner films. These findings offer an alternative strategy to manipulate structural and polarization properties by tuning the interfacial strain in epitaxial multiferroic thin films.

  5. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, F. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Fischer, I. A.; Schulze, J. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Benedetti, A. [CACTI, Univ. de Vigo, Campus Universitario Lagoas Marcosende 15, Vigo (Spain); Zaumseil, P. [IHP GmbH, Innovations for High Performance Microelectronics, Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Cerqueira, M. F.; Vasilevskiy, M. I. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Stefanov, S.; Chiussi, S. [Dpto. Fisica Aplicada, Univ. de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  6. Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

  7. Epitaxy of Polar Oxides and Semiconductors

    Science.gov (United States)

    Shelton, Christopher Tyrel

    Integrating polar oxide materials with wide-bandgap nitride semiconductors offers the possibility of a tunable 2D carrier gas (2DCG) - provided defect densities are low and interfaces are abrupt. This dissertation investigates a portion of the synthesis science necessary to produce a "semiconductor-grade" interface between these highly dissimilar materials. A significant portion of this work is aligned with efforts to engineer a step-free GaN substrate to produce single in-plane oriented rocksalt oxide films. Initially, we explore the homoepitaxial MOCVD growth conditions necessary to produce highquality GaN films on ammonothermally grown substrates. Ammono substrates are only recently available for purchase and are the market leader in low-dislocation density material. Their novelty requires development of an understanding of morphology trade-offs in processing space. This includes preservation of the epi-polished surface in aggressive MOCVD environments and an understanding of the kinetic barriers affecting growth morphologies. Based on several factors, it was determined that GaN exhibits an 'uphill' diffusion bias that may likely be ascribed to a positive Ehrlich-Schwoebel (ES) barrier. This barrier should have a stabilizing effect against step-bunching but, for many growth conditions, regular step bunching was observed. One possible explanation for the step-bunching instability is the presence of impurities. Experimentally, conditions which incorporate more carbon into GaN homoepitaxial layers are correlated with step-bunching while conditions that suppress carbon produce bilayer stepped morphologies. These observations lead us to the conclusion that GaN homoepitaxial morphology is a competition between impurity induced step-bunching and a stabilizing diffusion bias due to a positive ES barrier. Application of the aforementioned homoepitaxial growth techniques to discrete substrate regions using selected- and confined area epitaxy (SAE,CAE) produces some

  8. Strain relaxation during solid-phase epitaxial crystallisation of Ge{sub x}Si{sub 1-x} alloy layers with depth dependent G{sub e} compositions

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Wahchung; Elliman, R.G.; Kringhoj, P. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

    1993-12-31

    The solid-phase epitaxial crystallisation of depth dependent Ge{sub x}Si{sub lx} alloy layers produced by implanting Ge into Si substrates was studied. In-situ monitoring was done using time-resolved reflectivity (TRR) whilst post-anneal defect structures were characterised by Rutherford backscattering and channeling spectrometry (RBS-C) and transmission electron microscopy (TEM). Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallisation velocity caused by roughening of the crystalline/amorphous interface. 11 refs., 1 tab., 2 figs.

  9. Epitaxy: Programmable Atom Equivalents Versus Atoms

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Mary X.; Seo, Soyoung E.; Gabrys, Paul A. [Department; Fleischman, Dagny [Thomas; Lee, Byeongdu [X-ray Science; Kim, Youngeun; Atwater, Harry A. [Thomas; Macfarlane, Robert J. [Department; Mirkin, Chad A.

    2016-12-05

    The programmability of DNA makes it an attractive structure-directing ligand for the assembly of nanoparticle superlattices in a manner that mimics many aspects of atomic crystallization. However, the synthesis of multilayer single crystals of defined size remains a challenge. Though previous studies considered lattice mismatch as the major limiting factor for multilayer assembly, thin film growth depends on many interlinked variables. Here, a more comprehensive approach is taken to study fundamental elements, such as the growth temperature and the thermodynamics of interfacial energetics, to achieve epitaxial growth of nanoparticle thin films. Under optimized equilibrium conditions, single crystal, multilayer thin films can be synthesized over 500 × 500 μm2 areas on lithographically patterned templates. Importantly, these superlattices follow the same patterns of crystal growth demonstrated in thin film atomic deposition, allowing for these processes to be understood in the context of well-studied atomic epitaxy, and potentially enabling a nanoscale model to study fundamental crystallization processes.

  10. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  11. On the kinetic barriers of graphene homo-epitaxy

    International Nuclear Information System (INIS)

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-01-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size

  12. Top- and side-gated epitaxial graphene field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xuebin; Wu, Xiaosong; Sprinkle, Mike; Ming, Fan; Ruan, Ming; Hu, Yike; De Heer, Walt A. [Georgia Institute of Technology, School of Physics, Atlanta, GA (United States); Berger, Claire [Georgia Institute of Technology, School of Physics, Atlanta, GA (United States); CNRS-Institut Neel, Grenoble (France)

    2010-02-15

    Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm{sup 2}/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side-gate FET structures are promising. Conductivity (left panel) and transport resistances {rho}{sub xx} and {rho}{sub xy} of a top gate graphene Hall bar on SiC Si-face, showing a sign reversal of the hall coefficient at the resistance peak. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  13. Epitaxial growth of Fe/BaTiO3 heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brivio, S., E-mail: m.gooley@elsevier.com [LNESS, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100, Como (Italy); Rinaldi, C.; Petti, D.; Bertacco, R. [LNESS, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100, Como (Italy); Sanchez, F. [Institut de Ciencia de Materials de Barcelona, Consejo Superior de Investigaciones Cientificas, Campus Universitat Autonoma de Barcelona, Bellaterra 08193, Catalunya (Spain)

    2011-06-30

    The realization of epitaxial heterostructures involving ferroelectric (FE) and ferromagnetic (FM) materials is one of the possible routes towards the realization of devices exploiting sizable magnetoelectric effects. In this paper we demonstrate the epitaxial growth of Fe on BaTiO{sub 3}(001) as this system represents a prototypical example of interface between well known FE and FM materials with bcc and perovskite structure respectively, both with Curie temperature well above 300 K. Fe grows on BaTiO{sub 3} with 45 deg. rotation of its cubic lattice with respect to that of the substrate in order to reduce the lattice mismatch. Negligible interdiffusion of Ba and Ti cations or Fe atoms is found by X-ray photoemission spectroscopy, while a sizable Fe oxidation occurs within an interfacial layer with thicknesses thinner than 3 nm.

  14. Chemical beam epitaxy — a child of surface science

    Science.gov (United States)

    Lüth, Hans

    1994-01-01

    Chemical Beam Epitaxy (CBE) or MOMBE is currently one of the major deposition techniques in semiconductor technology. The growth process is performed in a UHV chamber under low pressure conditions and the source material is supplied by molecular beams, such that only surface kinetics are determining the chemical reactions leading to growth of the epilayer. This paper intends to give a review on the development of this deposition technique. After considering the early period, where this epitaxy method started to develop, partially from ideas being born in surface science, some milestones in the further development and basic understanding are presented. The mutual interaction between CBE/MOMBE as a deposition technique and other fields of surface science is described as well as the impact on the deposition technology of other semiconductors (e.g. for Si-based material systems). Future prospects of CBE are finally discussed, particularly in comparison with the competing techniques MBE and MOCVD (metal-organic chemical vapor deposition).

  15. Bi axially textured YBCO coated tape prepared using dynamic magnetic grain alignment

    International Nuclear Information System (INIS)

    Genoud, Jean-Yves; Quinton, William

    1999-01-01

    A new magnetic grain alignment technique has been applied to produce bi axially aligned YBCO coated tapes. A bi axially aligned dispersion of orthorhombic Y 2 Ba 4 Cu 7 O 15 (Y-247) powder was settled on un textured silver substrates. The Y-247 tapes were then melt processed to achieve high critical current YBa 2 Cu 3 O 7 (Y-123) tapes with CuO as a secondary phase. The biaxial alignment is preserved after the densification process and a clear enhancement of J c relative to identically prepared un textured or uniaxially textured samples is obtained. Critical current densities of up to 5000 A cm -2 at 77 K in self-field and 1500 A cm -2 in 0.5 T magnetic field at 65 K were obtained in films from 20 to 40 μm thick. Problems were experienced in achieving fully densified thick films while retaining biaxial texture. The initial grain size distribution was found to have a major influence on the final microstructure. Provided significant improvements in J c can be obtained this method offers an alternative to coated tape processes based on epitaxial growth which has the advantage that it does not require textured substrates. The biaxial alignment technique described here intrinsically acts on the bulk material rather than at surfaces. This offers the possibility of texturing without thickness limitations. (author)

  16. Magnetoelastic effects associated with elastic surface wave propagation in epitaxial garnet films

    International Nuclear Information System (INIS)

    Volluet, G.; Desormiere, B.; Auld, B.A.

    1976-01-01

    Surface wave delay lines have been fabricated on epitaxial garnet films, using a ZnO coating and interdigital transducers for elastic wave excitation. Amplitude and phase delay variations of the delayed signal have been measured as a function of an in-plane magnetic field, at frequencies of 210 MHz and 335 MHz. For pure YIG films, the strongest effects are observed when the films are not magnetically saturated, exhibiting stripe domain patterns. The observed absorptions are explained by the gyromagnetic resonances driven by the effective field associated with the elastic strains. This effective field was determined from the relevant terms of the magnetoelastic energy; the stripe domain resonances were computed only for a (1,0,0) oriented film. An ''easy-plane'' film of GdGa doped YIG was also used and good agreement was found between gyromagnetic resonances and acoustic absorptions. Also the motion of stripe domains induced by an elastic wave has been observed. The drift velocity has been measured as a function of incident power. A discussion of this new effect is given

  17. Equipment for fully automatic radiographic pipe inspection

    International Nuclear Information System (INIS)

    Basler, G.; Sperl, H.; Weinschenk, K.

    1977-01-01

    The patent describes a device for fully automatic radiographic testing of large pipes with longitudinal welds. Furthermore the invention enables automatic marking of films in radiographic inspection with regard to a ticketing of the test piece and of that part of it where testing took place. (RW) [de

  18. Epitaxial growth on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

    2013-01-01

    Roč. 16, č. 1 (2013), s. 59-64 ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

  19. Graphene growth on h-BN by molecular beam epitaxy

    OpenAIRE

    García Martínez, Jorge Manuel; Pinczuk, Aron

    2013-01-01

    Graphene growth on dielectric substrates has potential to enable new kinds of devices and applications. We explore graphene growth via direct depositing carbon in a MBE environment on different dielectric substrates, such as h-BN and sapphire. The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated [1]. Formation of single-layer graphene is clearly apparent in Raman spectra which disp...

  20. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2012-07-24

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  1. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  2. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

    Directory of Open Access Journals (Sweden)

    Lijuan Wang

    2017-02-01

    Full Text Available Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

  3. Preferentially Etched Epitaxial Liftoff of InP Material

    Science.gov (United States)

    Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); DeAngelo, Frank L. (Inventor)

    1997-01-01

    The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

  4. Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.

    Science.gov (United States)

    Kim, Eun Sung; Hwang, Jae-Yeol; Lee, Kyu Hyoung; Ohta, Hiromichi; Lee, Young Hee; Kim, Sung Wng

    2017-02-01

    Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi 0.5 Sb 1.5 Te 3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Model of an LHC superconducting quadrupole magnet

    CERN Multimedia

    Laurent Guiraud

    2000-01-01

    Model of a superconducting quadrupole magnet for the LHC project. These magnets are used to focus the beam by squeezing it into a smaller cross-section, a similar effect to a lens focusing light. However, each magnet only focuses the beam in one direction so alternating magnet arrangements are required to produce a fully focused beam.

  6. First-principles design of epitaxial perovskite heterostructures

    Science.gov (United States)

    Neaton, J. B.

    2003-03-01

    Experimental capabilities now allow layer-by-layer epitaxial growth of perovskite-based oxides with atomic-level control. This makes possible a wide range of novel multifunctional oxide heterostructures, composite systems which promise to play an important role in many contemporary applications. The phenomenology of oxides grown in this geometry is rather complex, and expected to be influenced by composition, interfacial structure and chemistry, internal fields arising from non-bulk electrical boundary conditions, and the considerable strains associated with coherent epitaxy. In this talk, the respective roles of each of these features in selected artificial heterostructures is investigated quantitatively using first-principles density-functional theory within the local density approximation. First, the structure, polarization, phonons, and static dielectric response of several standard perovskite materials, such as BaTiO_3, SrTiO_3, and PbTiO_3, are mapped as as a function of epitaxial misfit strains up to 3%. These results are then used to interpret and design properties of paraelectric/ferroelectric superlattices, such as BaTiO_3/SrTiO3 and PbTiO_3/SrTiO_3; inversion-symmetry breaking heterostructures, such as LaAlO_3/SrTiO_3; and multiferroic thin films, such as BiFeO_3. Comparisons with recent experiments, and implications for future work, are discussed in each case.

  7. Interaction of GaN epitaxial layers with atomic hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

    2004-08-15

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

  8. Domain epitaxial growth of ferroelectric films of barium strontium titanate on sapphire

    Science.gov (United States)

    Tumarkin, A. V.; Odinets, A. A.

    2018-01-01

    A model of the epitaxial growth of crystalline multicomponent films on single-crystal substrates with a domain correspondence is presented using a solid solution of barium strontium titanate on sapphire substrates ( r cut). The domain epitaxial growth suggests the matching of the lattice planes of the film and the substrate having similar structures by comparison of domain multiple of an integral number of the interplanar spacings. Variation of the component composition of the solid solution enables changes in the domain size in the range sufficient for epitaxial growth. This method can be used to project the epitaxial growth of films of various solid solutions on single-crystal substrates.

  9. Dry Epitaxial Lift-Off for High Efficiency Solar Cells, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A new method of transferring epitaxially grown active films onto an inexpensive polymeric flexible carrier. Specifically, for making thin lightweight high efficiency...

  10. 76 FR 36176 - Fully Developed Claim (Fully Developed Claims-Applications for Compensation, Pension, DIC, Death...

    Science.gov (United States)

    2011-06-21

    ... DEPARTMENT OF VETERANS AFFAIRS [OMB Control No. 2900-0747] Fully Developed Claim (Fully Developed Claims--Applications for Compensation, Pension, DIC, Death Pension, and/or Accrued Benefits); Correction AGENCY: Veterans Benefits Administration, Department of Veterans Affairs. ACTION: Notice; correction...

  11. Fully superconducting rectifiers and fluxpumps Part 1: Realized methods for pumping flux

    NARCIS (Netherlands)

    van de Klundert, L.J.M.; ten Kate, Herman H.J.

    1981-01-01

    The magnetic and electrical properties of superconductors were a challenge for many inventors and designers to use superconducting materials in the construction of fully superconducting voltage and current sources commonly called fluxpumps. In the past twenty years a large variety of mechanically or

  12. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  13. Anomalous magnetic ordering in DyxPr1-x alloys

    DEFF Research Database (Denmark)

    Clegg, P.S.; Cowley, R.A.; Goff, J.P.

    2000-01-01

    Epitaxial thin-films of DyxPr1-x alloys have been studied using neutron diffraction and magnetization measurements. The crystal structure changes from HCP to Sm type to DHCP as x decreases; each crystal phase has different magnetic behaviour. Surprisingly, long-range order is suppressed in the DH...

  14. Microstructure of epitaxial thin films of the ferromagnetic shape memory alloy Ni{sub 2}MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Eichhorn, Tobias

    2011-12-09

    This work is concerned with the preparation and detailed characterization of epitaxial thin films of the Heusler compound Ni{sub 2}MnGa. This multiferroic compound is of both technological and scientific interest due to the outstanding magnetic shape memory (MSM) behavior. Huge magnetic-field-induced strains up to 10 % have been observed for single crystals close to a Ni{sub 2}MnGa composition. The effect is based on a redistribution of crystallographic twin variants of tetragonal or orthorhombic symmetry. Under the driving force of the external magnetic field twin boundaries can move through the crystal, which largely affects the macroscopic shape. The unique combination of large reversible strain, high switching frequency and high work output makes the alloy a promising actuator material. Since the MSM effect results from an intrinsic mechanism, MSM devices possess great potential for implementation in microsystems, e.g. microfluidics. So far significant strains, in response to an external magnetic field, have been observed for bulk single crystals and foams solely. In order to take advantage of the effect in applications concepts for miniaturization are needed. The rather direct approach, based on epitaxial thin films, is explored in the course of this work. This involves sample preparation under optimized deposition parameters and fabrication of freestanding single-crystalline films. Different methods to achieve freestanding microstructures such as bridges and cantilevers are presented. The complex crystal structure is extensively studied by means of X-ray diffraction. Thus, the different crystallographic twin variants that are of great importance for the MSM effect are identified. In combination with microscopy the twinning architecture for films of different crystallographic orientation is clarified. Intrinsic blocking effects in samples of (100) orientation are explained on basis of the variant configuration. In contrast, a promising twinning microstructure

  15. A "cool" set of magnets

    CERN Multimedia

    2003-01-01

    The first Short Straight Section for the LHC arcs, containing the first Main Quadrupole and two packages of corrector magnets, was fully assembled and successfully cold tested at CERN end of September.

  16. Development of fully automatic pipe welding system

    International Nuclear Information System (INIS)

    Tanioka, Shin-ichi; Nakano, Mitsuhiro; Tejima, Akio; Yamada, Minoru; Saito, Tatsuo; Saito, Yoshiyuki; Abe, Rikio

    1985-01-01

    We have succeeded in developing a fully automatic TIG welding system; namely CAPTIG that enables unmanned welding operations from the initial layer to the final finishing layer continuously. This welding system is designed for continuous, multilayered welding of thick and large diameter fixed pipes of nuclear power plants and large-size boiler plants where high-quality welding is demanded. In the tests conducted with this welding system, several hours of continuous unmanned welding corroborated that excellent beads are formed, good results are obtained in radiographic inspection and that quality welding is possible most reliably. This system incorporates a microcomputer for fully automatic controls by which it features a seam tracking function, wire feed position automatic control function, a self-checking function for inter-pass temperature, cooling water temperature and wire reserve. (author)

  17. A fully reconfigurable photonic integrated signal processor

    Science.gov (United States)

    Liu, Weilin; Li, Ming; Guzzon, Robert S.; Norberg, Erik J.; Parker, John S.; Lu, Mingzhi; Coldren, Larry A.; Yao, Jianping

    2016-03-01

    Photonic signal processing has been considered a solution to overcome the inherent electronic speed limitations. Over the past few years, an impressive range of photonic integrated signal processors have been proposed, but they usually offer limited reconfigurability, a feature highly needed for the implementation of large-scale general-purpose photonic signal processors. Here, we report and experimentally demonstrate a fully reconfigurable photonic integrated signal processor based on an InP-InGaAsP material system. The proposed photonic signal processor is capable of performing reconfigurable signal processing functions including temporal integration, temporal differentiation and Hilbert transformation. The reconfigurability is achieved by controlling the injection currents to the active components of the signal processor. Our demonstration suggests great potential for chip-scale fully programmable all-optical signal processing.

  18. Developments towards a fully automated AMS system

    International Nuclear Information System (INIS)

    Steier, P.; Puchegger, S.; Golser, R.; Kutschera, W.; Priller, A.; Rom, W.; Wallner, A.; Wild, E.

    2000-01-01

    The possibilities of computer-assisted and automated accelerator mass spectrometry (AMS) measurements were explored. The goal of these efforts is to develop fully automated procedures for 'routine' measurements at the Vienna Environmental Research Accelerator (VERA), a dedicated 3-MV Pelletron tandem AMS facility. As a new tool for automatic tuning of the ion optics we developed a multi-dimensional optimization algorithm robust to noise, which was applied for 14 C and 10 Be. The actual isotope ratio measurements are performed in a fully automated fashion and do not require the presence of an operator. Incoming data are evaluated online and the results can be accessed via Internet. The system was used for 14 C, 10 Be, 26 Al and 129 I measurements

  19. Fully differential VBF Higgs production at NNLO

    CERN Document Server

    Cacciari, Matteo; Karlberg, Alexander; Salam, Gavin P.; Zanderighi, Giulia

    2015-08-21

    We calculate the fully differential next-to-next-to-leading-order (NNLO) corrections to vector-boson fusion (VBF) Higgs production at proton colliders, in the limit in which there is no cross-talk between the hadronic systems associated with the two protons. We achieve this using a new "projection-to-Born" method that combines an inclusive NNLO calculation in the structure-function approach and a suitably factorised next-to-leading-order (NLO) VBF Higgs plus 3-jet calculation, using appropriate Higgs plus 2-parton counter events. An earlier calculation of the fully inclusive cross section had found small NNLO corrections, at the 1% level. In contrast, the cross section after typical experimental VBF cuts receives NNLO contributions of about 5-6%, while differential distributions show corrections of up to 10-12% for some standard observables. The corrections are often outside the NLO scale-uncertainty band.

  20. FMFT: fully massive four-loop tadpoles

    Science.gov (United States)

    Pikelner, Andrey

    2018-03-01

    We present FMFT - a package written in FORM that evaluates four-loop fully massive tadpole Feynman diagrams. It is a successor of the MATAD package that has been successfully used to calculate many renormalization group functions at three-loop order in a wide range of quantum field theories especially in the Standard Model. We describe an internal structure of the package and provide some examples of its usage.

  1. Fully probabilistic design of hierarchical Bayesian models

    Czech Academy of Sciences Publication Activity Database

    Quinn, A.; Kárný, Miroslav; Guy, Tatiana Valentine

    2016-01-01

    Roč. 369, č. 1 (2016), s. 532-547 ISSN 0020-0255 R&D Projects: GA ČR GA13-13502S Institutional support: RVO:67985556 Keywords : Fully probabilistic design * Ideal distribution * Minimum cross- entropy principle * Bayesian conditioning * Kullback-Leibler divergence * Bayesian nonparametric modelling Subject RIV: BB - Applied Statistics, Operational Research Impact factor: 4.832, year: 2016 http://library.utia.cas.cz/separaty/2016/AS/karny-0463052.pdf

  2. Fully NLO Parton Shower in QCD

    International Nuclear Information System (INIS)

    Skrzypek, M.; Jadach, S.; Slawinska, M.; Gituliar, O.; Kusina, A.; Placzek, W.

    2011-01-01

    The project of constructing a complete NLO-level Parton Shower Monte Carlo for the QCD processes developed in IFJ PAN in Krakow is reviewed. Four issues are discussed: (1) the extension of the standard inclusive collinear factorization into a new, fully exclusive scheme; (2) reconstruction of the LO Parton Shower in the new scheme; (3) inclusion of the exclusive NLO corrections into the hard process and (4) inclusion of the exclusive NLO corrections into the evolution (ladder) part. (authors)

  3. Fully Passive Wireless Acquisition of Neuropotentials

    Science.gov (United States)

    Schwerdt, Helen N.

    The ability to monitor electrophysiological signals from the sentient brain is requisite to decipher its enormously complex workings and initiate remedial solutions for the vast amount of neurologically-based disorders. Despite immense advancements in creating a variety of instruments to record signals from the brain, the translation of such neurorecording instrumentation to real clinical domains places heavy demands on their safety and reliability, both of which are not entirely portrayed by presently existing implantable recording solutions. In an attempt to lower these barriers, alternative wireless radar backscattering techniques are proposed to render the technical burdens of the implant chip to entirely passive neurorecording processes that transpire in the absence of formal integrated power sources or powering schemes along with any active circuitry. These radar-like wireless backscattering mechanisms are used to conceive of fully passive neurorecording operations of an implantable microsystem. The fully passive device potentially manifests inherent advantages over current wireless implantable and wired recording systems: negligible heat dissipation to reduce risks of brain tissue damage and minimal circuitry for long term reliability as a chronic implant. Fully passive neurorecording operations are realized via intrinsic nonlinear mixing properties of the varactor diode. These mixing and recording operations are directly activated by wirelessly interrogating the fully passive device with a microwave carrier signal. This fundamental carrier signal, acquired by the implant antenna, mixes through the varactor diode along with the internal targeted neuropotential brain signals to produce higher frequency harmonics containing the targeted neuropotential signals. These harmonics are backscattered wirelessly to the external interrogator that retrieves and recovers the original neuropotential brain signal. The passive approach removes the need for internal power

  4. Magneto-transport and thermoelectric properties of epitaxial FeSb{sub 2} thin film on MgO substrate

    Energy Technology Data Exchange (ETDEWEB)

    Duong, Anh Tuan; Rhim, S. H., E-mail: sonny@ulsan.ac.kr; Shin, Yooleemi; Nguyen, Van Quang; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

    2015-01-19

    We report magneto-transport and thermoelectric properties of FeSb{sub 2} thin film epitaxially grown on the MgO substrate using molecular beam epitaxy. The film exhibits compressive strain of 1.74% owing to large lattice mismatch, whose physical consequences are nontrivial. Magnetic phase has been changed from diamagnetic in bulk, as evidenced by anomalous Hall effect (AHE) and negative magneto-resistance (MR). The FeSb{sub 2} film is semiconducting without any metallic transition unlike the bulk counterpart. In particular, hysteresis in MR with distinct feature of AHE is evident with coercive field of 500 and 110 Oe for T = 20 and 50 K, respectively. Furthermore, from the Seebeck coefficients and temperature dependence of the resistivity, it is evident that the film is semiconducting with small band gap: 3.76 meV for T < 40 K and 13.48 meV for T > 40 K, respectively, where maximum thermoelectric power factor of 12 μV/cm·K at T = 50 K.

  5. Fully implicit kinetic modelling of collisional plasmas

    International Nuclear Information System (INIS)

    Mousseau, V.A.

    1996-05-01

    This dissertation describes a numerical technique, Matrix-Free Newton Krylov, for solving a simplified Vlasov-Fokker-Planck equation. This method is both deterministic and fully implicit, and may not have been a viable option before current developments in numerical methods. Results are presented that indicate the efficiency of the Matrix-Free Newton Krylov method for these fully-coupled, nonlinear integro-differential equations. The use and requirement for advanced differencing is also shown. To this end, implementations of Chang-Cooper differencing and flux limited Quadratic Upstream Interpolation for Convective Kinematics (QUICK) are presented. Results are given for a fully kinetic ion-electron problem with a self consistent electric field calculated from the ion and electron distribution functions. This numerical method, including advanced differencing, provides accurate solutions, which quickly converge on workstation class machines. It is demonstrated that efficient steady-state solutions can be achieved to the non-linear integro-differential equation, obtaining quadratic convergence, without incurring the large memory requirements of an integral operator. Model problems are presented which simulate plasma impinging on a plate with both high and low neutral particle recycling typical of a divertor in a Tokamak device. These model problems demonstrate the performance of the new solution method

  6. Fabrication of Multiferroic Co-Substituted BiFeO3 Epitaxial Films on SrTiO3 (100 Substrates by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Yasuo Ando

    2011-06-01

    Full Text Available The 10 at.% Co-substituted BiFeO3 films (of thickness 50 nm were successfully prepared by radio frequency (r.f. magnetron sputtering on SrTiO3 (100 substrates with epitaxial relationships of [001](001Co-BiFeO3//[001](001SrTiO3. In this study, a single phase Co-substituted BiFeO3 epitaxial film was fabricated by r.f. magnetron sputtering. Sputtering conditions such as Ar, O2 gas pressure, annealing temperature, annealing atmosphere, and sputtering power were systematically changed. It was observed that a low Ar gas pressure and low sputtering power is necessary to suppress the formation of the secondary phases of BiOx. The Co-substituted BiFeO3 films were crystalized with post-annealing at 600 °C in air. The process window for single phase films is narrower than that for pure BiFeO3 epitaxial films. By substituting Fe with Co in BiFeO3, the magnetization at room temperature increased to 20 emu/cm3. This result suggests that Co-substituted BiFeO3 films can be used in spin-filter devices.

  7. Impulse Magnetization of Nd-Fe-B Sintered Magnets for Sensors

    Directory of Open Access Journals (Sweden)

    Marek Przybylski

    2016-04-01

    Full Text Available Magnetization of large Nd-Fe-B sintered permanent magnets is still challenging. This type of permanent magnet is electrically conductive, so impulse magnetization causes a flow of eddy currents which prevent magnetization of the whole volume of the magnet. The paper deals with the impulse magnetization of sintered Nd-Fe-B permanent magnets and shows a method for the determination of suitable parameters for the supply system. The necessary magnetic field strength for magnetization of the magnet to saturation was determined. The optimal magnetizing fixture supply voltage for magnetization to saturation was determined from simulations in PSpice software, finite element analyses in Maxwell 15 and measurements. Measurements of magnetic induction on the surface of the Nd-Fe-B magnet are also presented to ensure that a magnet with 70 mm diameter and 20 mm in height is fully saturated.

  8. Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111)

    Science.gov (United States)

    Amjadipour, Mojtaba; Tadich, Anton; Boeckl, John J.; Lipton-Duffin, Josh; MacLeod, Jennifer; Iacopi, Francesca; Motta, Nunzio

    2018-04-01

    Growing graphene on SiC thin films on Si is a cheaper alternative to the growth on bulk SiC, and for this reason it has been recently intensively investigated. Here we study the effect of hydrogen intercalation on epitaxial graphene obtained by high temperature annealing on 3C-SiC/Si(111) in ultra-high vacuum. By using a combination of core-level photoelectron spectroscopy, low energy electron diffraction, and near-edge x-ray absorption fine structure (NEXAFS) we find that hydrogen saturates the Si atoms at the topmost layer of the substrate, leading to free-standing graphene on 3C-SiC/Si(111). The intercalated hydrogen fully desorbs after heating the sample at 850 °C and the buffer layer appears again, similar to what has been reported for bulk SiC. However, the NEXAFS analysis sheds new light on the effect of hydrogen intercalation, showing an improvement of graphene’s flatness after annealing in atomic H at 600 °C. These results provide new insight into free-standing graphene fabrication on SiC/Si thin films.

  9. Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

    International Nuclear Information System (INIS)

    Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

    1990-01-01

    We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

  10. DURIP 98-99: Molecular Beam Epitaxial Growth and In Situ Characterization of Phase Separated Optoelectronic Semiconductors

    National Research Council Canada - National Science Library

    Millunchick, J. Mirecki

    1999-01-01

    This proposal requested funding to procure a Molecular Beam Epitaxy (MBE) chamber with extensive in situ diagnostic capabilities to study phase separation of III-V semiconductor alloys during epitaxial growth...

  11. Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

    DEFF Research Database (Denmark)

    Kant, K. Mohan; Esposito, Vincenzo; Pryds, Nini

    2012-01-01

    -plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity....

  12. Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Mal, Siddhartha; Nori, Sudhakar; Narayan, J. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Mula, Suhrit [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769008 (India); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2012-12-01

    We have introduced defects in ZnO (undoped and doped with Co and Mn) epitaxial thin films using laser irradiation from nanosecond laser pulses and thermal annealing in oxygen ambient. In contrast to the as grown samples, the laser irradiated films show a significant increase in conductivity, enhancement in UV emission, while maintaining the same wurtzite crystal structure. Room-temperature ferromagnetism (RTFM) is observed in laser-irradiated samples, which increased with the number of laser pulses up to a certain value where magnetic moment saturates. The induced ferromagnetism as well as the enhanced electrical conductivity can be reversed with thermal annealing in oxygen ambient. The magnetization in Co and Mn doped films was found to be strong function of growth conditions and defect concentration. X-ray diffraction and optical absorption experiments suggested a 2+ valance state and tetrahedral coordination for both Co and Mn ions. There is a simultaneous increase in n-type electrical conductivity with the number of laser pulses and continue to exhibit semiconducting behavior in both undoped and doped films. The saturation magnetization was found to be 0.08 {mu}{sub B}/Co and 0.05 {mu}{sub B}/Mn, much lower than 3.0 {mu}{sub B}/Co and 5.0 {mu}{sub B}/Mn, indicating the prominent role of intrinsic defects in RTFM with some contribution from Co{sup 2+}-oxygen vacancy complexes. We propose a unified mechanism based upon introduction of intrinsic defects to explain RTFM and n-type conductivity enhancements during pulsed laser and thermal annealing.

  13. Origin of Bi.sup.3+./sup.–related luminescence in Gd.sub.3./sub.Ga.sub.5./sub.O.sub.12./sub.:Bi epitaxial films

    Czech Academy of Sciences Publication Activity Database

    Krasnikov, A.; Luchechko, A.; Mihóková, Eva; Nikl, Martin; Syvorotka, I. I.; Zazubovich, S.; Zhydachevskii, Ya.

    2017-01-01

    Roč. 190, Oct (2017), s. 81-88 ISSN 0022-2313 R&D Projects: GA ČR GA16-15569S Institutional support: RVO:68378271 Keywords : photoluminescence * epitaxial films * gadolinium gallium garnet * Bi 3+ * energy transfer Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.686, year: 2016

  14. Ferroelectric nanodomains in epitaxial PbTiO.sub.3./sub. films grown on SmScO.sub.3./sub. and TbScO.sub.3./sub. substrates

    Czech Academy of Sciences Publication Activity Database

    Borodavka, Fedir; Gregora, Ivan; Bartasyte, A.; Margueron, S.; Plausinaitiene, V.; Abrutis, A.; Hlinka, Jiří

    2013-01-01

    Roč. 113, č. 18 (2013), "187216-1"-"187216-7" ISSN 0021-8979 R&D Projects: GA ČR GD202/09/H041; GA ČR GAP204/10/0616 Grant - others:GA UK(CZ) SVV-2011-263303 Institutional support: RVO:68378271 Keywords : electric domains * epitaxial layers * ferroelectric thin films * lead compounds * MOCVD * phonons * Raman spectra * texture Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.185, year: 2013

  15. Crystallographic axis transition of Sm.sub.1+x./sub.Ba.sub.2-x./sub.Cu.sub.3./sub.O.sub.7-δ./sub. film prepared by liquid phase epitaxy (LPE)

    Czech Academy of Sciences Publication Activity Database

    Tang, Ch.Y.; Cai, Y.Q.; Li, W.; Sun, J.L.; Yao, X.; Jirsa, Miloš

    2009-01-01

    Roč. 9, č. 3 (2009), s. 1339-1343 ISSN 1528-7483 R&D Projects: GA ČR GA202/08/0722 Institutional research plan: CEZ:AV0Z10100520 Keywords : crystallographic axis orientation * Sm 1+x Ba 2-x Cu 3 O 7-$ film * RE-123 film * Cu-rich Ba-Cu-O flux * liquid epitaxy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.162, year: 2009

  16. Magnetic anisotropy and magnetoresistance in Co-based multilayers: a polarised neutron reflectivity study

    International Nuclear Information System (INIS)

    Yusuf, S.M.

    2000-01-01

    We have studied giant magnetoresistance (GMR) and anisotropic magnetoresistance (AMR) effects by carrying out magnetization, magnetoresistance and polarized neutron reflectivity measurements on epitaxial Co/Re multilayers. Polarized neutron reflectivity study with polarization analysis gives a direct way to sense the direction of sublattice magnetization and coupling between magnetic layers. The evolution of magnetic structure as a function of the strength and direction of the applied magnetic field has been studied. The AMR effect observed in magnetoresistance study has been explained in the light of observed magnetic structure. (author)

  17. Interplay of uniaxial and cubic anisotropy in epitaxial Fe thin films on MgO (001 substrate

    Directory of Open Access Journals (Sweden)

    Srijani Mallik

    2014-09-01

    Full Text Available Epitaxial Fe thin films were grown on annealed MgO(001 substrates at oblique incidence by DC magnetron sputtering. Due to the oblique growth configuration, uniaxial anisotropy was found to be superimposed on the expected four-fold cubic anisotropy. A detailed study of in-plane magnetic hysteresis for Fe on MgO thin films has been performed by Magneto Optic Kerr Effect (MOKE magnetometer. Both single step and double step loops have been observed depending on the angle between the applied field and easy axis i.e. along ⟨100⟩ direction. Domain images during magnetization reversal were captured by Kerr microscope. Domain images clearly evidence two successive and separate 90° domain wall (DW nucleation and motion along cubic easy cum uniaxial easy axis and cubic easy cum uniaxial hard axis, respectively. However, along cubic hard axis two 180° domain wall motion dominate the magnetization reversal process. In spite of having four-fold anisotropy it is essential to explain magnetization reversal mechanism in 0°< ϕ < 90° span as uniaxial anisotropy plays a major role in this system. Also it is shown that substrate rotation can suppress the effect of uniaxial anisotropy superimposed on four-fold anisotropy.

  18. Epitaxial ternary nitride thin films prepared by a chemical solution method

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  19. Epitaxy and fiber texture of Pb films on mica and glass.

    Science.gov (United States)

    Wyatt, P. W.; Yelon, A.

    1972-01-01

    We report the production of (111) epitaxial Pb films on mica and (111) textured Pb films on mica and glass. Film structure is studied by reflection electron diffraction and by etching and optical microscopy. Thin (about 1000 A) epitaxial films are found to be doubly positioned. Reorientation during growth of thicker films leads to single positioning in areas several tenths of a millimeter across.

  20. Epitaxial growth of solution deposited Bi2Sr2CaCu2Ox films

    NARCIS (Netherlands)

    Gobel, OF; Du, [No Value; Hibma, T; von Lampe, [No Value; Steiner, U

    The epitaxial growth of Bi2Sr2CaCu2Ox (Bi2212) high temperature superconducting thin films was studied. The films were solution-deposited from a polymer-containing precursor onto SrTiO3 (001) substrates. Bi2212 formed an epitaxial phase with the c-axis parallel to the substrate normal and an in-lane

  1. Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

    CSIR Research Space (South Africa)

    Venkatasamy, V

    2006-04-01

    Full Text Available This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and atomic layer deposition (ALD), all of which are based on the growth...

  2. Epitaxial growth of YBa2Cu307−δ films on SrTiO3 (100) by direct solution precursor deposition

    International Nuclear Information System (INIS)

    Bustamante, A; Garcia, Jorge; Osorio, Ana M; Valladares, Luis De Los Santos; Barnes, C H W; González, J C; Azuma, Y; Majima, Y; Aguiar, J Albino

    2014-01-01

    We study the optimal temperature to obtain YBa 2 Cu 3 O 7-δ epitaxial films grown onto SrTiO 3 substrates by direct solution deposition. The samples received heat treatment at 820, 840 and 860 °C, then characterized by XRD, observing the (00l) profiles; and magnetic susceptibility measurements. The T C-onset for all the samples was 90 K. In addition, the current – voltage (I-V) measurements shows typical tunneling signals corresponding to normal metal-superconducting junctions indicating the films are promising for potential electrical applications.

  3. Influence of epitaxial strain on multiple-mode compounds: The case of SrBi.sub.2./sub.Nb.sub.2./sub.O.sub.9./sub.

    Czech Academy of Sciences Publication Activity Database

    Petralanda, U.; Hlinka, Jiří; Extebarria, I.

    2017-01-01

    Roč. 96, č. 14 (2017), s. 1-7, č. článku 144112. ISSN 2469-9950 R&D Projects: GA ČR GA15-04121S Grant - others:AV ČR(CZ) PAN-17-04 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : ferroelectrics * thin films * epitaxy * ab-initio methods * phase transitions Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  4. Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La,Sr)(Al,Ta)O3 bicrystal substrates

    Science.gov (United States)

    Katase, Takayoshi; Ishimaru, Yoshihiro; Tsukamoto, Akira; Hiramatsu, Hidenori; Kamiya, Toshio; Tanabe, Keiichi; Hosono, Hideo

    2010-04-01

    Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10-μm-wide microbridges spanning a 30°-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current-voltage characteristics up to 17 K, and the critical current was suppressed remarkably by a magnetic field. Microbridges without a BGB did not show the RSJ-like behavior, and their critical current densities were 20 times larger than those of BGB bridges, confirming BGB bridges display a Josephson effect originating from weakly-linked BGB.

  5. Magnetoelectric and multiferroic properties of variously oriented epitaxial BiFeO3-CoFe2O4 nanostructured thin films

    Science.gov (United States)

    Yan, Li; Wang, Zhiguang; Xing, Zengping; Li, Jiefang; Viehland, D.

    2010-03-01

    We report the ferroelectric, ferromagnetic, and magnetoelectric (ME) properties of self-assembled epitaxial BiFeO3-CoFe2O4 (BFO-CFO) nanostructure composite thin films deposited on (001), (110), and (111) SrTiO3 (STO) single crystal substrates. These various properties are shown to depend on orientation. The maximum values of the relative dielectric constant, saturation polarization, longitudinal piezoelectric coefficient, saturation magnetization, and ME coefficient at room temperature were 143, 86 μm/cm2, 50 pm/V, 400 emu/cc, and 20 mV/cm Oe, respectively.

  6. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  7. Fully Coupled FE Analyses of Buried Structures

    Directory of Open Access Journals (Sweden)

    James T. Baylot

    1994-01-01

    Full Text Available Current procedures for determining the response of buried structures to the effects of the detonation of buried high explosives recommend decoupling the free-field stress analysis from the structure response analysis. A fully coupled (explosive–soil structure finite element analysis procedure was developed so that the accuracies of current decoupling procedures could be evaluated. Comparisons of the results of analyses performed using this procedure with scale-model experiments indicate that this finite element procedure can be used to effectively evaluate the accuracies of the methods currently being used to decouple the free-field stress analysis from the structure response analysis.

  8. A Fully Automated Penumbra Segmentation Tool

    DEFF Research Database (Denmark)

    Nagenthiraja, Kartheeban; Ribe, Lars Riisgaard; Hougaard, Kristina Dupont

    2012-01-01

    salavageable tissue, quickly and accurately. We present a fully Automated Penumbra Segmentation (APS) algorithm using PWI and DWI images. We compare automatically generated PWI-DWI mismatch mask to mask outlined manually by experts, in 168 patients. Method: The algorithm initially identifies PWI lesions......) at 600∙10-6 mm2/sec. Due to the nature of thresholding, the ADC mask overestimates the DWI lesion volume and consequently we initialized level-set algorithm on DWI image with ADC mask as prior knowledge. Combining the PWI and inverted DWI mask then yield the PWI-DWI mismatch mask. Four expert raters...

  9. Nanoscale Phase Separation in Fe3O4(111) Films on Sapphire(0001) and Phase Stability of Fe3O4(001) Films on MgO(001) Grown by Oxygen-Plasma-Assisted Molecular Beam Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Toney, Michael F

    2003-06-25

    We report a phase instability in oxygen-plasma-assisted molecular beam epitaxy of Fe{sub 3}O{sub 4} films on sapphire (0001) substrates. Under a wide range of growth conditions, Fe{sub 3}O{sub 4} (111) films phase separate, on a nanometer length scale, into Fe{sub 3}O{sub 4}, Fe0 and metallic Fe, which is attributed to formation of the thermodynamically unstable phase Fe0 in the initial stages of (111) growth. In contrast, Fe{sub 3}O{sub 4} (001) films, grown simultaneously on MgO(001) substrates, do not exhibit this phase instability. We specify growth conditions for which single-phase, epitaxial Fe{sub 3}O{sub 4} (111) films can be grown by plasma-assisted molecular beam epitaxy or by reactive evaporation of Fe in molecular oxygen. Film orientation and phase separation strongly influence magnetic properties. Single-phase Fe{sub 3}O{sub 4} (111) films are much more difficult to magnetize than Fe{sub 3}O{sub 4} (001) films and phase separation makes the films even more difficult to magnetize.

  10. Electron holography study of remanence states in exchange-biased MnPd/Fe bilayers grown epitaxially on MgO(001).

    Science.gov (United States)

    Jeong, Jong Seok; Akase, Zentaro; Shindo, Daisuke; Zhan, Qing-Feng; Krishnan, Kannan M

    2011-01-01

    We investigated magnetic remanence states of epitaxially grown, exchange-biased MnPd/Fe bilayers by electron holography emphasizing the crystallographic orientations of the layers. Thin-foil transmission electron microscopy (TEM) specimens were carefully prepared along both hard and easy axes of the Fe layer. The ex situ magnetization-reversal process was carried out using the TEM specimens, and magnetic flux densities of the ultra-thin Fe layers were evaluated at different remanence states. We show that a spin configuration in the TEM specimens is determined by the competition between an exchange coupling at the MnPd/Fe bilayer interface, shape anisotropy of TEM specimens and intrinsic magnetocrystalline anisotropy of Fe.

  11. Improved radiation tolerance of MAPS using a depleted epitaxial layer

    Energy Technology Data Exchange (ETDEWEB)

    Dorokhov, A., E-mail: Andrei.Dorokhov@IReS.in2p3.f [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Bertolone, G.; Baudot, J.; Brogna, A.S.; Colledani, C.; Claus, G.; De Masi, R. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Deveaux, M. [Goethe-Universitaet Frankfurt am Main, Senckenberganlage 31, 60325 Frankfurt am Main (Germany); Doziere, G.; Dulinski, W. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Fontaine, J.-C. [Groupe de Recherche en Physique des Hautes Energies (GRPHE), Universite de Haute Alsace, 61, rue Albert Camus, 68093 Mulhouse (France); Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France)

    2010-12-11

    Tracking performance of Monolithic Active Pixel Sensors (MAPS) developed at IPHC (Turchetta, et al., 2001) have been extensively studied (Winter, et al., 2001; Gornushkin, et al., 2002) . Numerous sensor prototypes, called MIMOSA, were fabricated and tested since 1999 in order to optimise the charge collection efficiency and power dissipation, to minimise the noise and to increase the readout speed. The radiation tolerance was also investigated. The highest fluence tolerable for a 10{mu}m pitch device was found to be {approx}10{sup 13}n{sub eq}/cm{sup 2}, while it was only 2x10{sup 12}n{sub eq}/cm{sup 2} for a 20{mu}m pitch device. The purpose of this paper is to show that the tolerance to non-ionising radiation may be extended up to O(10{sup 14}) n{sub eq}/cm{sup 2}. This goal relies on a fabrication process featuring a 15{mu}m thin, high resistivity ({approx}1k{Omega}cm) epitaxial layer. A sensor prototype (MIMOSA-25) was fabricated in this process to explore its detection performance. The depletion depth of the epitaxial layer at standard CMOS voltages (<5V) is similar to the layer thickness. Measurements with m.i.p.s show that the charge collected in the seed pixel is at least twice larger for the depleted epitaxial layer than for the undepleted one, translating into a signal-to-noise ratio (SNR) of {approx}50. Tests after irradiation have shown that this excellent performance is maintained up to the highest fluence considered (3x10{sup 13}n{sub eq}/cm{sup 2}), making evidence of a significant extension of the radiation tolerance limits of MAPS.

  12. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...... fully strained after 30 min anneal in N-2 at 500 degrees C.; Ge-Sn interdiffusion is seen at 500 degrees C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 x 10(19) cm(-3). GeSn:B provides slightly lower Hall hole mobility values than in pure p......-type Ge especially for low B concentrations. (C) 2011 American Institute of Physics [doi.10.1063/1.3645620]...

  13. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, V. P., E-mail: kuznetsov_vp@mail.ru [Lobachevsky State University, Research Physicotechnical Institute (Russian Federation); Shmagin, V. B.; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Marychev, M. O. [Lobachevsky State University (Russian Federation); Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kuznetsov, M. V. [Lobachevsky State University, Research Physicotechnical Institute (Russian Federation); Andreev, B. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kornaukhov, A. V. [Lobachevsky State University, Research Physicotechnical Institute (Russian Federation); Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2011-01-15

    The dependence of the concentrations of the Er impurity and ionized donors on the epitaxy temperature has been studied before and after annealing of Si:Er/Si layers grown by sublimation molecular-beam epitaxy. n-Si:Er layers have been grown in the temperature range 400-800 Degree-Sign C and annealed in hydrogen atmosphere at a temperature of 800 Degree-Sign C for 30 min. The possible nature of the donor centers is discussed.

  14. Single-domain epitaxial silicene on diboride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fleurence, A., E-mail: antoine@jaist.ac.jp; Friedlein, R.; Aoyagi, K.; Yamada-Takamura, Y. [School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Gill, T. G. [School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH (United Kingdom); Department of Chemistry, UCL, London WC1H 0AJ (United Kingdom); Sadowski, J. T. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Copel, M.; Tromp, R. M. [IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Hirjibehedin, C. F. [London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH (United Kingdom); Department of Chemistry, UCL, London WC1H 0AJ (United Kingdom); Department of Physics and Astronomy, UCL, London WC1E 6BT (United Kingdom)

    2016-04-11

    Epitaxial silicene, which forms spontaneously on ZrB{sub 2}(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. The realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.

  15. Large-area, laterally-grown epitaxial semiconductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jung; Song, Jie; Chen, Danti

    2017-07-18

    Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

  16. Hard gap in epitaxial semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Chang, W.; Albrecht, S. M.; Jespersen, T. S.

    2015-01-01

    information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting...... a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate......-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity....

  17. Liquid phase epitaxy of gallium arsenide - a review

    International Nuclear Information System (INIS)

    Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

    1992-07-01

    Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

  18. Low contact resistance in epitaxial graphene devices for quantum metrology

    Energy Technology Data Exchange (ETDEWEB)

    Yager, Tom, E-mail: yager@chalmers.se, E-mail: ywpark@snu.ac.kr; Lartsev, Arseniy; Lara-Avila, Samuel; Kubatkin, Sergey [Department of Microtechnology and Nanoscience, Chalmers University of Technology Göteborg, S-412 96 (Sweden); Cedergren, Karin [School of Physics, University of New South Wales, Sydney, NSW-2052 (Australia); Yakimova, Rositsa [Department of Physics, Chemistry and Biology (IFM), Linköping University Linköping, S-581 83 (Sweden); Panchal, Vishal; Kazakova, Olga [National Physical Laboratory, Teddington, TW11 0LW (United Kingdom); Tzalenchuk, Alexander [National Physical Laboratory, Teddington, TW11 0LW (United Kingdom); Department of Physics, Royal Holloway, University of London, Egham, TW20 0EX (United Kingdom); Kim, Kyung Ho; Park, Yung Woo, E-mail: yager@chalmers.se, E-mail: ywpark@snu.ac.kr [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2015-08-15

    We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.

  19. Low contact resistance in epitaxial graphene devices for quantum metrology

    Directory of Open Access Journals (Sweden)

    Tom Yager

    2015-08-01

    Full Text Available We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001 for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω suitable for high precision quantum resistance metrology.

  20. Chiral habit selection on nanostructured epitaxial quartz films.

    Science.gov (United States)

    Carretero-Genevrier, Adrián; Gich, Martí; Picas, Laura; Sanchez, Clément; Rodriguez-Carvajal, Juan

    2015-01-01

    Understanding the crystallization of enantiomorphically pure systems can be relevant to diverse fields such as the study of the origins of life or the purification of racemates. Here we report on polycrystalline epitaxial thin films of quartz on Si substrates displaying two distinct types of chiral habits that never coexist in the same film. We combine Atomic Force Microscopy (AFM) analysis and computer-assisted crystallographic calculations to make a detailed study of these habits of quartz. By estimating the surface energies of the observed crystallites we argue that the films are enantiomorphically pure and we briefly outline a possible mechanism to explain the habit and chiral selection in this system.

  1. SiC epitaxy growth using chloride-based CVD

    International Nuclear Information System (INIS)

    Henry, Anne; Leone, Stefano; Beyer, Franziska C.; Pedersen, Henrik; Kordina, Olof; Andersson, Sven; Janzén, Erik

    2012-01-01

    The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.

  2. Solar-type dynamo behaviour in fully convective stars without a tachocline.

    Science.gov (United States)

    Wright, Nicholas J; Drake, Jeremy J

    2016-07-28

    In solar-type stars (with radiative cores and convective envelopes like our Sun), the magnetic field powers star spots, flares and other solar phenomena, as well as chromospheric and coronal emission at ultraviolet to X-ray wavelengths. The dynamo responsible for generating the field depends on the shearing of internal magnetic fields by differential rotation. The shearing has long been thought to take place in a boundary layer known as the tachocline between the radiative core and the convective envelope. Fully convective stars do not have a tachocline and their dynamo mechanism is expected to be very different, although its exact form and physical dependencies are not known. Here we report observations of four fully convective stars whose X-ray emission correlates with their rotation periods in the same way as in solar-type stars. As the X-ray activity-rotation relationship is a well-established proxy for the behaviour of the magnetic dynamo, these results imply that fully convective stars also operate a solar-type dynamo. The lack of a tachocline in fully convective stars therefore suggests that this is not a critical ingredient in the solar dynamo and supports models in which the dynamo originates throughout the convection zone.

  3. Fully populated VCM or the hidden parameter

    Directory of Open Access Journals (Sweden)

    Kermarrec G.

    2017-11-01

    Full Text Available Least-squares estimates are trustworthy with minimal variance if the correct stochastic model is used. Due to computational burden, diagonal models that neglect correlations are preferred to describe the elevation dependency of the variance of GPS observations. In this contribution, an improved stochastic model based on a parametric function to take correlations between GPS phase observations into account is presented. Built on an adapted and flexible Mátern function accounting for spatiotemporal variabilities, its parameters can be fixed thanks to Maximum Likelihood Estimation or chosen apriori to model turbulent tropospheric refractivity fluctuations. In this contribution, we will show in which cases and under which conditions corresponding fully populated variance covariance matrices (VCM replace the estimation of a tropospheric parameter. For this equivalence “augmented functional versus augmented stochastic model” to hold, the VCM should be made sufficiently largewhich corresponds to computing small batches of observations. A case study with observations from a medium baseline of 80 km divided into batches of 600 s shows improvement of up to 100 mm for the 3Drms when fully populated VCM are used compared with an elevation dependent diagonal model. It confirms the strong potential of such matrices to improve the least-squares solution, particularly when ambiguities are let float.

  4. Fully 3D GPU PET reconstruction

    Energy Technology Data Exchange (ETDEWEB)

    Herraiz, J.L., E-mail: joaquin@nuclear.fis.ucm.es [Grupo de Fisica Nuclear, Departmento Fisica Atomica, Molecular y Nuclear, Universidad Complutense de Madrid (Spain); Espana, S. [Department of Radiation Oncology, Massachusetts General Hospital and Harvard Medical School, Boston, MA (United States); Cal-Gonzalez, J. [Grupo de Fisica Nuclear, Departmento Fisica Atomica, Molecular y Nuclear, Universidad Complutense de Madrid (Spain); Vaquero, J.J. [Departmento de Bioingenieria e Ingenieria Espacial, Universidad Carlos III, Madrid (Spain); Desco, M. [Departmento de Bioingenieria e Ingenieria Espacial, Universidad Carlos III, Madrid (Spain); Unidad de Medicina y Cirugia Experimental, Hospital General Universitario Gregorio Maranon, Madrid (Spain); Udias, J.M. [Grupo de Fisica Nuclear, Departmento Fisica Atomica, Molecular y Nuclear, Universidad Complutense de Madrid (Spain)

    2011-08-21

    Fully 3D iterative tomographic image reconstruction is computationally very demanding. Graphics Processing Unit (GPU) has been proposed for many years as potential accelerators in complex scientific problems, but it has not been used until the recent advances in the programmability of GPUs that the best available reconstruction codes have started to be implemented to be run on GPUs. This work presents a GPU-based fully 3D PET iterative reconstruction software. This new code may reconstruct sinogram data from several commercially available PET scanners. The most important and time-consuming parts of the code, the forward and backward projection operations, are based on an accurate model of the scanner obtained with the Monte Carlo code PeneloPET and they have been massively parallelized on the GPU. For the PET scanners considered, the GPU-based code is more than 70 times faster than a similar code running on a single core of a fast CPU, obtaining in both cases the same images. The code has been designed to be easily adapted to reconstruct sinograms from any other PET scanner, including scanner prototypes.

  5. Epitaxial growth of high temperature superconductors by cathodic sputtering I: thin films of YBaCuO

    International Nuclear Information System (INIS)

    Navacerrada, M.A.; Sefrioui, Z.; Arias, D.; Varela, M.; Loos, G.; Leon, C.; Lucia, M.L.; Santamaria, J.; Sanchez-Quesada, F.

    1998-01-01

    High quality c-oriented YBa 2 Cu 3 O 7 -x thin films have been grown on SrTiO 3 (100)substrates by high pressure sputtering in pure oxygen atmosphere. Low angle X-ray diffraction and atomic force microscopy were performed on films less than 250 angstrom thick showing a plenitude better than one unit cell. Moreover, the structural characterization by means of X ray φ scans showed that growth is epitaxial. The critical temperature has been measured by different ways and was always in the range 89.5-90.5K. the resistance transition is sharper than 1K and the mutual inductance response always shows magnetic losses peaks narrower than 0.3K. Critical current densities are in excess of 10''''6 angstrom/cm''''2 at 77K. (Author) 8 refs

  6. Giant Faraday rotation in Bi(x)Ce(3-x)Fe5O12 epitaxial garnet films.

    Science.gov (United States)

    Chandra Sekhar, M; Singh, Mahi R; Basu, Shantanu; Pinnepalli, Sai

    2012-04-23

    Thin films of Bi(x)Ce(3-x)Fe(5)O(12) with x = 0.7 and 0.8 compositions were prepared by using pulsed laser deposition. We investigated the effects of processing parameters used to fabricate these films by measuring various physical properties such as X-ray diffraction, transmittance, magnetization and Faraday rotation. In this study, we propose a phase diagram which provides a suitable window for the deposition of Bi(x)Ce(3-x)Fe(5)O(12) epitaxial films. We have also observed a giant Faraday rotation of 1-1.10 degree/µm in our optimized films. The measured Faraday rotation value is 1.6 and 50 times larger than that of CeYIG and YIG respectively. A theoretical model has been proposed for Faraday rotation based on density matrix method and an excellent agreement between experiment and theory is found. © 2012 Optical Society of America

  7. Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO3 Ultrathin Films

    Directory of Open Access Journals (Sweden)

    Chuanwei Huang

    2014-07-01

    Full Text Available In functional oxide films, different electrical/mechanical boundaries near film surfaces induce rich phase diagrams and exotic phenomena. In this paper, we review some key points which underpin structure, phase transition and related properties in BiFeO3 ultrathin films. Compared with the bulk counterparts, we survey the recent results of epitaxial BiFeO3 ultrathin films to illustrate how the atomic structure and phase are markedly influenced by the interface between the film and the substrate, and to emphasize the roles of misfit strain and depolarization field on determining the domain patterns, phase transformation and associated physical properties of BiFeO3 ultrathin films, such as polarization, piezoelectricity, and magnetism. One of the obvious consequences of the misfit strain on BiFeO3 ultrathin films is the emergence of a sequence of phase transition from tetragonal to mixed tetragonal & rhombohedral, the rhombohedral, mixed rhombohedral & orthorhombic, and finally orthorhombic phases. Other striking features of this system are the stable domain patterns and the crossover of 71° and 109° domains with different electrical boundary conditions on the film surface, which can be controlled and manipulated through the depolarization field. The external field-sensitive enhancements of properties for BiFeO3 ultrathin films, including the polarization, magnetism and morphotropic phase boundary-relevant piezoelectric response, offer us deeper insights into the investigations of the emergent properties and phenomena of epitaxial ultrathin films under various mechanical/electrical constraints. Finally, we briefly summarize the recent progress and list open questions for future study on BiFeO3 ultrathin films.

  8. Enhancement of transport critical current density of epitaxial Nb film by lithography

    Science.gov (United States)

    Yamada, H.; Harada, N.; Kanayama, K.; Nakagawa, S.; Yamasaki, H.; Hamajima, T.

    2005-12-01

    The critical current density, JC, of a superconductor is controlled by the pinning interaction between the flux line lattice and pinning centers. Artificial flux pinning centers are necessary for high- TC superconductors, because JC decreases markedly when a magnetic field of a few Tesla is applied at the temperature of liquid nitrogen. Here, we discuss the effects of groove-shaped artificial pinning centers introduced by microlithography. Superconducting Nb film was deposited epitaxially on Al 2O 3(1 1 0 2) substrates and grooves with a period of 4-μm were introduced. The micro-fabricated film had about 2-fold greater transport JC = 4.1 × 10 9 A/m 2 as compared with the value of JC = 2.1 × 10 9 A/m 2 of the standard film at 4.2 K, 0.1 T. This JC enhancement was observed over a wide temperature range of 4.2-9.0 K.

  9. 8Li β-NMR study of epitaxial LixCoO2 films

    Science.gov (United States)

    Sugiyama, J.; Harada, M.; Oki, H.; Shiraki, S.; Hitosugi, T.; Ofer, O.; Salman, Z.; Song, Q.; Wang, D.; Saadaoui, H.; Morris, G. D.; Chow, K. H.; MacFarlane, W. A.; Kiefl, R. F.

    2014-12-01

    In order to investigate the diffusive motion of Li+ in a thin film electrode material for Li-ion batteries, we have measured β-NMR spectra of 8Li+ ions implanted into epitaxial films of Li0.7CoO2 and LiCoO2 in the temperature range between 10 and 310 K. Below 100 K, the spin-lattice relaxation rate (1/T1) in the Li0.7CoO2 film increased with decreasing temperature, indicating the appearance and evolution of localized magnetic moments, as observed with μ+SR. As temperature is increased from 100 K, 1/T1 starts to increase above ~ 200 K, where both Li- NMR and μ+SR also sensed an increase in 1/T1 due to Li-diffusion. Interestingly, such diffusive behavior was found to depend on the implantation energy, possibly because the surface of the film is decomposed due to chemical instability of the Li0.7CoO2 phase in air. Such diffusive behavior was not observed for the LiCoO2 film up to 310 K.

  10. Magnetisation reversal of epitaxial films of γ'-Fe4N on Cu(1 0 0)

    International Nuclear Information System (INIS)

    Ecija, D.; Jimenez, E.; Camarero, J.; Gallego, J.M.; Vogel, J.; Mikuszeit, N.; Sacristan, N.; Miranda, R.

    2007-01-01

    Epitaxial single-phase γ'-Fe 4 N(1 0 0) thin films have been grown on Cu(1 0 0). The growth mode and structure have been studied from the early stages up to 50 nm thick films by means of in situ scanning tunnelling microscopy, low-energy electron diffraction and Auger electron spectroscopy. The nitride films are single crystals with sharp interfaces with the substrate, atomically flat and grown layer by layer. The magnetic properties have been studied ex situ by high-resolution vectorial Kerr magnetometry. The films are ferromagnetic at room temperature. The magnetisation lies within the plane of the film. The hysteresis loops are non-consistent with a simple cubic symmetry. Two easy axes, close to the directions, but at ∼81 o from each other, are found. The angular dependence of the vector hysteresis loops reveals different magnetisation reversal behaviours around the two hard-axes directions and around the two easy-axes directions. The origin of these features is discussed

  11. Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

    KAUST Repository

    Wan, Yi

    2017-12-19

    Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.

  12. Atomic-scale engineering of ferroelectric-ferromagnetic interfaces of epitaxial perovskite films for functional properties.

    Science.gov (United States)

    Hausmann, Simon; Ye, Jingfan; Aoki, Toshihiro; Zheng, Jian-Guo; Stahn, Jochen; Bern, Francis; Chen, Binda; Autieri, Carmine; Sanyal, Biplab; Esquinazi, Pablo D; Böni, Peter; Paul, Amitesh

    2017-09-06

    Besides epitaxial mismatch that can be accommodated by lattice distortions and/or octahedral rotations, ferroelectric-ferromagnetic interfaces are affected by symmetry mismatch and subsequent magnetic ordering. Here, we have investigated La 0.67 Sr 0.33 MnO 3 (LSMO) samples with varying underlying unit cells (uc) of BaTiO 3 (BTO) layer on (001) and (110) oriented substrates in order to elucidate the role of symmetry mismatch. Lattice mismatch for 3 uc of BTO and symmetry mismatch for 10 uc of BTO, both associated with local MnO 6 octahedral distortions of the (001) LSMO within the first few uc, are revealed by scanning transmission electron microscopy. Interestingly, we find exchange bias along the in-plane [110]/[100] directions only for the (001) oriented samples. Polarized neutron reflectivity measurements confirm the existence of a layer with zero net moment only within (001) oriented samples. First principle density functional calculations show that even though the bulk ground state of LSMO is ferromagnetic, a large lattice constant together with an excess of La can stabilize an antiferromagnetic LaMnO 3 -type phase at the interface region and explain the experimentally observed exchange bias. Atomic scale tuning of MnO 6 octahedra can thus be made possible via symmetry mismatch at heteroepitaxial interfaces. This aspect can act as a vital parameter for structure-driven control of physical properties.

  13. Fully Coupled Michigan MHD - Rice Convection Model for a Northward Turning

    Science.gov (United States)

    de Zeeuw, D.; Sazykin, S.; Wolf, R.; Gombosi, T.; Powell, K.

    2003-04-01

    The Rice Convection Model (RCM) has been successfully coupled to the Michigan MHD model (BATSRUS). This fully coupled code allows us to self-consistently simulate the physics in the inner and outer magnetosphere. Results will be presented for a fully coupled-code run for idealized inputs, steady Southward IMF followed by a Northward turning of the IMF. Discussion will include details of the coupling and choices that can be made for different types of coupling. Analysis will include region-2 currents, shielding of the inner magnetosphere, polar cap potential drop, partial and symmetric ring currents, pressure distribution, magnetic field inflation, and distribution of pVegamma.

  14. Quantum Fully Homomorphic Encryption with Verification

    DEFF Research Database (Denmark)

    Alagic, Gorjan; Dulek, Yfke; Schaffner, Christian

    2017-01-01

    Fully-homomorphic encryption (FHE) enables computation on encrypted data while maintaining secrecy. Recent research has shown that such schemes exist even for quantum computation. Given the numerous applications of classical FHE (zero-knowledge proofs, secure two-party computation, obfuscation, etc.......) it is reasonable to hope that quantum FHE (or QFHE) will lead to many new results in the quantum setting. However, a crucial ingredient in almost all applications of FHE is circuit verification. Classically, verification is performed by checking a transcript of the homomorphic computation. Quantumly, this strategy...... is impossible due to no-cloning. This leads to an important open question: can quantum computations be delegated and verified in a non-interactive manner? In this work, we answer this question in the affirmative, by constructing a scheme for QFHE with verification (vQFHE). Our scheme provides authenticated...

  15. Simulations of fully deformed oscillating flux tubes

    Science.gov (United States)

    Karampelas, K.; Van Doorsselaere, T.

    2018-02-01

    Context. In recent years, a number of numerical studies have been focusing on the significance of the Kelvin-Helmholtz instability in the dynamics of oscillating coronal loops. This process enhances the transfer of energy into smaller scales, and has been connected with heating of coronal loops, when dissipation mechanisms, such as resistivity, are considered. However, the turbulent layer is expected near the outer regions of the loops. Therefore, the effects of wave heating are expected to be confined to the loop's external layers, leaving their denser inner parts without a heating mechanism. Aim. In the current work we aim to study the spatial evolution of wave heating effects from a footpoint driven standing kink wave in a coronal loop. Methods: Using the MPI-AMRVAC code, we performed ideal, three dimensional magnetohydrodynamic simulations of footpoint driven transverse oscillations of a cold, straight coronal flux tube, embedded in a hotter environment. We have also constructed forward models for our simulation using the FoMo code. Results: The developed transverse wave induced Kelvin-Helmholtz (TWIKH) rolls expand throughout the tube cross-section, and cover it entirely. This turbulence significantly alters the initial density profile, leading to a fully deformed cross section. As a consequence, the resistive and viscous heating rate both increase over the entire loop cross section. The resistive heating rate takes its maximum values near the footpoints, while the viscous heating rate at the apex. Conclusions: We conclude that even a monoperiodic driver can spread wave heating over the whole loop cross section, potentially providing a heating source in the inner loop region. Despite the loop's fully deformed structure, forward modelling still shows the structure appearing as a loop. A movie attached to Fig. 1 is available at http://https://www.aanda.org

  16. Lidar Cloud Detection with Fully Convolutional Networks

    Science.gov (United States)

    Cromwell, E.; Flynn, D.

    2017-12-01

    The vertical distribution of clouds from active remote sensing instrumentation is a widely used data product from global atmospheric measuring sites. The presence of clouds can be expressed as a binary cloud mask and is a primary input for climate modeling efforts and cloud formation studies. Current cloud detection algorithms producing these masks do not accurately identify the cloud boundaries and tend to oversample or over-represent the cloud. This translates as uncertainty for assessing the radiative impact of clouds and tracking changes in cloud climatologies. The Atmospheric Radiation Measurement (ARM) program has over 20 years of micro-pulse lidar (MPL) and High Spectral Resolution Lidar (HSRL) instrument data and companion automated cloud mask product at the mid-latitude Southern Great Plains (SGP) and the polar North Slope of Alaska (NSA) atmospheric observatory. Using this data, we train a fully convolutional network (FCN) with semi-supervised learning to segment lidar imagery into geometric time-height cloud locations for the SGP site and MPL instrument. We then use transfer learning to train a FCN for (1) the MPL instrument at the NSA site and (2) for the HSRL. In our semi-supervised approach, we pre-train the classification layers of the FCN with weakly labeled lidar data. Then, we facilitate end-to-end unsupervised pre-training and transition to fully supervised learning with ground truth labeled data. Our goal is to improve the cloud mask accuracy and precision for the MPL instrument to 95% and 80%, respectively, compared to the current cloud mask algorithms of 89% and 50%. For the transfer learning based FCN for the HSRL instrument, our goal is to achieve a cloud mask accuracy of 90% and a precision of 80%.

  17. Dewetting of Epitaxial Silver Film on Silicon by Thermal Annealing

    Science.gov (United States)

    Sanders, Charlotte E.; Kellogg, Gary L.; Shih, C.-K.

    2013-03-01

    It has been shown that noble metals can grow epitaxially on semiconducting and insulating substrates, despite being a non-wetting system: low temperature deposition followed by room temperature annealing leads to atomically flat film morphology. However, the resulting metastable films are vulnerable to dewetting, which has limited their utility for applications under ambient conditions. The physics of this dewetting is of great interest but little explored. We report on an investigation of the dewetting of epitaxial Ag(111) films on Si(111) and (100). Low energy electron microscopy (LEEM) shows intriguing evolution in film morphology and crystallinity, even at temperatures below 100oC. On the basis of these findings, we can begin to draw compelling inferences about film-substrate interaction and the kinetics of dewetting. Financial support is from NSF, DGE-0549417 and DMR-0906025. This work was performed, in part, at the Center for Integrated Nanotechnologies, User Facility operated for the U.S. DOE Office of Science. Sandia National Lab is managed and operated by Sandia Corp., a subsidiary of Lockheed Martin Corp., for the U.S. DOE's National Nuclear Security Administration under DE-AC04-94AL85000.

  18. Epitaxial hexagonal materials on IBAD-textured substrates

    Science.gov (United States)

    Matias, Vladimir; Yung, Christopher

    2017-08-15

    A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

  19. Environmental safety issues for molecular beam epitaxy platform growth technology

    Science.gov (United States)

    Izumi, Shigekazu; Shirahama, Hiroyuki; Kouji, Yoshiharu

    2001-07-01

    The choice of a technology must clearly depend on its ability to fulfill not only material requirements but also environmental safety criteria. Therefore, the possibility of environmental impact raises questions related to safety and in the near future, the tolerable amount of hazardous materials, particularly for crystal growth of compound semiconductors. In the epitaxial field, both molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have already been acknowledged as well-established production methods and are playing important roles in the mass production of various device structures. Currently, however, it is common knowledge that there still exists one critical issue, namely, that of environmental safety with respect to the use of many hazardous materials. In MOCVD growth, large amounts of arsine (AsH 3) and phosphine (PH 3) are used, and in MBE growth the problem of higher amounts of arsine generation than the TLV (threshold limited value: 50 ppb) is commonly faced, particularly during maintenance procedures. By using gas source MBE (GSMBE), the arsenic contamination (adhesion) onto the wall inside the growth chamber is markedly reduced compared with that in the case of conventional MBE, and unintentional arsine generation is suppressed to be under the TLV. In addition, the consumption efficiency for hydrides is higher than 80%. This value is significantly higher than in the case of alternative growth methods, such as MBE (3-10%) and MOCVD (1-20%).

  20. Epitaxial Heterostructures of Lead Selenide Quantum Dots on Hematite Nanowires.

    Science.gov (United States)

    Selinsky, Rachel S; Shin, Sanghun; Lukowski, Mark A; Jin, Song

    2012-06-21

    We present a novel method for synthesizing epitaxial quantum dot-nanowire (QD-NW) heterostructures using the example of colloidal PbSe QDs decorated on furnace-grown hematite (α-Fe2O3) NWs. The direct heterogeneous nucleation of QDs on Fe2O3 NWs relies upon an aggressive surface dehydration of the as-synthesized Fe2O3 NWs at 350 °C under vacuum and subsequent introduction of colloidal reactants resulting in direct growth of PbSe QDs on Fe2O3. The synthesis is tunable: the QD diameter distribution and density of QDs on the NWs increase with increased dehydration time, and QD diameters and size distributions decrease with decreased injection temperature of the colloidal synthesis. Transmission electron microscopy (TEM) structural analysis reveals direct heteroepitaxial heterojunctions where the matching faces can be PbSe (002) and Fe2O3 (003) with their respective [11̅0] crystallographic directions aligned. This can be a general approach for integrating colloidal and furnace synthetic techniques, thus broadening possible material combinations for future high-quality, epitaxial nanoscale heterostructures for solar applications.

  1. The epitaxial Bain path of antiferromagnetic tetragonal Mn

    Science.gov (United States)

    Qiu, S. L.; Marcus, P. M.; Ma, Hong

    2000-03-01

    The epitaxial Bain path (EBP) of antiferromagnetic (AF) tetragonal Mn has been found by first-principles total-energy calculations using the full-potential linearized-augmented-plane-wave (FLAPW) method with two different potentials: (1) the local-spin-density-approximation without relativistic corrections (LSDA-NREL) and (2) the Perdew-Burke-Ernzerhof exchange-correlation potential in a generalized-gradient-approximation with relativistic corrections (GGA-REL). The EBP curve of AF Mn from the LSDA-NREL calculations shows a metastable tetragonal state at c/a = 0.68 (fct notation) and a stable tetragonal state at c/a = 0.99. The EBP curve from the GGA-REL calculations shows that these two states are at c/a = 0.60 and 0.96 respectively. Alloy measurements[1] find the stable tetragonal state at c/a = 0.95. The bcc state at c/a = 0.707 is inherently unstable from both LSDA and GGA calculations. The volume vs c/a curve shows that when grown epitaxially[2] on V and Pd, the AF Mn films are strained δ-Mn and γ-Mn respectively. [1] Y. Endoh and Y. Ishikawa, J. Phys. Soc. Jpn., 30 1614 (1971). [2] Y. Tian, F. Jona, and P. M. Marcus, Phys. Rev. B59, 12647 (1999).

  2. Ar +-laser-assisted subatomic-layer epitaxy of Si

    Science.gov (United States)

    Suda, Yoshiyuki; Ishida, Masahiro; Yamashita, Mitsutomi

    1996-12-01

    Si submonolayer-by-submonolayer epitaxy or subatomic-layer epitaxy (SALE) from Si 2H 6 on Si(001) has been carried out by repeating Si 2H 6 exposure and surface excitation induced by the combination of substrate resistive heating and Ar + laser irradiation. As the average substrate temperature or the laser irradiation power increases, the surface morphology of a grown film changes from a convex shape to a concave shape through a trapezoid shape. The roughness of a flat area of the trapezoid film is within ±2A˚per growth thickness of 100A˚, and a substrate temperature window of˜ 15°C and a laser power window of˜ 0.25W, where such a flat growth surface and a constant growth rate are obtained, has been observed. The ranges of these windows have been estimated to correspond to the same variation of the surface temperature in the laser irradiation area during the laser irradiation. This result together with the result of the analyses on growth thickness distribution profiles suggests that the laser irradiation works as a thermal effect. Thus, in the Ar +-laser-assisted SALE method, the growth surface morphology then the growth mode is controlled by the surface temperature during the laser irradiation. An Ar + laser is a useful tool to control the surface temperature.

  3. Atomic layer epitaxy of compound semiconductors with metalorganic precursors

    Science.gov (United States)

    DenBaars, S. P.; Dapkus, P. D.

    1989-11-01

    Atomic layer epitaxy (ALE) is a relatively new growth technology for depositing compound semiconductors one monolayer at a time. By employing a new regime of metalorganic chemical vapor deposition (MOCVD) growth, in which saturated surface reactions control the growth, it is possible to alternately deposit monolayers of column III and column V elements so that only one monolayer of the III-V compound semiconductor is formed in every cycle of the deposition. The use of metalorganic precursors for ALE is of considerable importance since it allows the hybridization of ALE with the existing MOCVD technique. Several benefits can be realized by integrating the two technologies. Layers of critical thickness and uniformity requirements can be grown by ALE, while thicker epitaxial layers can be grown by MOCVD. Additional advantages are the "digital growth" nature of ALE which affords a high degree of thickness reproducibility, and the selective area growth potential of laser-assisted ALE (LALE). In this paper, ALE and LALE of GaAs is reviewed with an emphasis on the utilization of metalorganic precursors.

  4. Field geometry dependence of magnetotransport in epitaxial La2/3Ca1/3MnO3 thin films

    International Nuclear Information System (INIS)

    Saldarriaga, W.; Baca, E.; Prieto, P.; Moran, O.; Grube, K.; Fuchs, D.; Schneider, R.

    2006-01-01

    In-plane and out-of-plane magnetoresistance measurements on epitaxial ∼200nm thin (001)-oriented films of high oxygen pressure DC-sputtering grown manganite La 2/3 Ca 1/3 MnO 3 were carried out. Single crystal (001)-SrTiO 3 substrates were used. The samples featured a Curie temperature T C ∼260K and a magnetic moment μ(T->0K)∼3μ B per Mn atom. Magnetocrystalline anisotropy with the easy axes lying on film plane was evidenced by recording the in-plane and out-of-plane magnetization loops at temperatures, below T C , in magnetic field strengths up to 5T. Evidence for anisotropic magnetotransport in these films was provided by electric measurements in a wide temperature range up to 6T magnetic field strengths applied both perpendicular and parallel to the film plane. In both applied magnetic field geometries, current and magnetic field were maintained perpendicular to each other. Neither low-field magnetoresistance nor large magnetoresistance hysteresis were observed on these samples, suggesting that the tensile strain imposed by the substrate in the first monolayers has partially been released. In addition, by rotating the sample 360 o around an axis parallel to film plane, in magnetic fields >=2T, a quadratic sinusoidal dependence of the magnetoresistance on the polar angle θ was observed. These results can be consistently interpreted using a generalized version of the theory of anisotropic magnetoresistance in transition-metal ferromagnets

  5. Epitaxy of (Ga,Mn)As; Epitaxie von (Ga,Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Utz, Martin

    2012-09-14

    The focus of this work lies on the enhancement of the magnetic properties of the ferromagnetic semiconductor Gallium manganese arsenide (GaMnAs), which is a basic material for the research in spintronics: It is told, how a high sample reproducibility and a strong control over the growth process can be gained by applying band edge spectroscopy and a special procedure for the material flux calibration. Also the most important methods for the electrical characterization of GaMnAs are discussed in a critical manner by showing that the anomalous Hall Effect contributes significantly to the Hall resistance even at room temperature and that Novak's method for the termination of the Curie-temperature provides correct values for layers with low defect concentration. Furthermore it is reported on the considerable enlargement of the useable parameter space of GaMnAs which was enabled by the enhanced control over the growth process: It was possible to grow layers with a very high Manganese content of 22% and Curie temperatures of 172 K and even once were produced which showed a strong magnetic moment despite an insulating behaviour at low temperatures. A last key aspect is the growth and characterization of ultra-thin GaMnAs layers, giving prospects for gating experiments or experiments on the proximity effect as these layers combine high Curie temperatures with insulating behaviour.

  6. Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Baji, Zs., E-mail: baji.zsofia@ttk.mta.hu [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Lábadi, Z.; Molnár, Gy.; Pécz, B. [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Vad, K. [Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), P.O. Box 51, H-4001, Debrecen (Hungary); Horváth, Z.E. [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Szabó, P.J. [Budapest University of Technology and Economics, Műegyetem rkp. 3-9. H-1111 Budapest (Hungary); Nagata, T. [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Volk, J. [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary)

    2014-07-01

    The possibility of depositing conductive epitaxial layers with atomic layer deposition has been examined. Epitaxial ZnO layers were grown on GaN and doped with Al. The resistivity of the epitaxial layers is between 0.6 and 2 * 10{sup −4} Ω cm with both the mobilities and the carrier concentrations being very high. The source of the high carrier concentration was found to be a combination of Al and Ga doping, the latter resulted by Ga atoms diffusing into the ZnO from the GaN substrate. - Highlights: • High-quality epitaxial ZnO layers were deposited with ALD on GaN above 270 °C. • In the Al-doped layers, domains with different orientations also appear. • Lower-temperature epitaxy is possible with an epitaxial seed layer. • The conductivity of the epitaxial layers is between 0.6 and 2 * 10{sup −4} Ω cm. • The high carrier concentration is resulted by the Ga and Al doping.

  7. Toward a tandem gallium phosphide on silicon solar cell through liquid phase epitaxy growth

    International Nuclear Information System (INIS)

    Kotulak, Nicole A.; Diaz, Martin; Barnett, Allen; Opila, Robert L.

    2014-01-01

    Three layers of GaP were epitaxially grown on Si(111) using liquid phase epitaxy (LPE) to demonstrate a path to fabrication of a GaP/Si tandem solar cell. Utilizing a Sn melt with Bi, Mg, and Si additives, direct epitaxial growth on a Si substrate occurred. This was followed by two further epitaxial growths, eliminating Si in the melt, with each layer decreasing in Si concentration. Scanning electron and optical microscopy and electron dispersive spectroscopy were performed in order to determine the characteristics of the growth layers. A fourth layer growth of GaP was attempted utilizing a Ga melt, and the existing structure was able to withstand contact with Ga without dissolution. Epitaxial layers of GaP with a decrease in Si concentration from 10-15% to 6%, then to less than 3%, were accomplished, thereby demonstrating a path to fabrication of a GaP/Si tandem cell using LPE. - Highlights: • A path to a GaP/Si tandem solar cell device was developed using liquid phase epitaxy. • Due to the high solubility of Si in GaP, multiple layers of GaP were grown. • Each epitaxial layer required the development of specific growth conditions

  8. Spin configurations and negative coercivity in epitaxially grown DyFe{sub 2}/YFe{sub 2} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Gordeev, S. N.; Beaujour, J.-M. L.; Bowden, G. J.; de Groot, P. A. J.; Rainford, B. D.; Ward, R. C. C.; Wells, M. R.

    2001-06-01

    Molecular beam epitaxial methods have been used to grow single crystal Laves phase DyFe{sub 2}/YFe{sub 2} superlattice samples with a (110) growth direction. In particular, the magnetic properties of the YFe{sub 2} dominated multilayer samples [wDyFe{sub 2}/4wYFe{sub 2}]{times}N with w=20, 30, 40, 45, 50, and 55 Aa are presented and discussed. In principle, the multilayer films should possess similar magnetic properties because they are all nominally Dy{sub 0.2}Y{sub 0.8}Fe{sub 2}. However, it is shown that their magnetic properties depend strongly on the thickness of the DyFe{sub 2} layers w. Those films with w{ge}45Aa possess negative coercivities, while those with w{le}40Aa are positive. It is argued that this behavior can be understood in terms of a strong increase of the intrinsic coercivity of the DyFe{sub 2}/YFe{sub 2} superlattice, taken as a whole, as w is reduced. For w{le}40Aa almost none of the DyFe{sub 2} moments can be flipped over in the available field range (12 T). {copyright} 2001 American Institute of Physics.

  9. Coherent magnetic structures in terbium/holmium superlattices

    DEFF Research Database (Denmark)

    Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.

    1997-01-01

    Neutron-scattering techniques have been used to investigate the magnetic properties of three Tb/Ho superlattices grown by molecular-beam epitaxy. It is revealed that for temperatures in the range T = 10 to T-N(Ho)approximate to 130 K, there is a basal-plane ferromagnetic alignment of Tb moments...... to 230 K, two samples retain this magnetic structure while the third undergoes a transition first to a mixed phase of helically and ferromagnetically ordered Tb moments, then to a phase with only helically ordered To moments. Ln all cases, the magnetic ordering is found to be long ranged, with coherence...

  10. Non-volatile magnetic random access memory

    Science.gov (United States)

    Katti, Romney R. (Inventor); Stadler, Henry L. (Inventor); Wu, Jiin-Chuan (Inventor)

    1994-01-01

    Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

  11. Preparation and Characterization of Epitaxial VO2 Films on Sapphire Using Postepitaxial Topotaxy Route via Epitaxial V2O3 Films

    Science.gov (United States)

    Yamaguchi, Iwao; Manabe, Takaaki; Tsuchiya, Tetsuo; Nakajima, Tomohiko; Sohma, Mitsugu; Kumagai, Toshiya

    2008-02-01

    Epitaxial VO2 films were prepared on the C-planes of α-Al2O3 substrates by a metal organic deposition (MOD) process. It was difficult to obtain the single phase of (010)M-oriented VO2 films, in which the subscript M refers to the monoclinic indices, by the heat treatment of amorphous precursor films in the VO2-stable region after the pyrolysis of the coating solution. The product films consisted of discontinuous circular grains of 1-2 µm size on the substrate surface. Therefore, we prepared the (010)M-oriented epitaxial VO2 films using postepitaxial topotaxy (PET), that is, topotactic oxidation of (0001)-oriented epitaxial V2O3 films. First, epitaxial V2O3(0001) films were obtained by MOD starting with a vanadium naphthenate solution. Second, the epitaxial V2O3(0001) films were topotactically oxidized at 500 °C in an Ar-O2 gas mixture with pO2 = 10-4 atm to obtain (010)M-oriented epitaxial VO2 films. The epitaxial relationships were VO2(010)M ∥ α-Al2O3(0001) and VO2[100]M ∥ α-Al2O3[0110], [1010], [1100]. The VO2(010)M films exhibited metal-semiconductor transitions with hysteresis loops at 60-80 °C. The resistivity change before and after the transition of the VO2(010)M film oxidized for 6 h was three orders of magnitude.

  12. Fully 3D refraction correction dosimetry system

    International Nuclear Information System (INIS)

    Manjappa, Rakesh; Makki, S Sharath; Kanhirodan, Rajan; Kumar, Rajesh; Vasu, Ram Mohan

    2016-01-01

    The irradiation of selective regions in a polymer gel dosimeter results in an increase in optical density and refractive index (RI) at those regions. An optical tomography-based dosimeter depends on rayline path through the dosimeter to estimate and reconstruct the dose distribution. The refraction of light passing through a dose region results in artefacts in the reconstructed images. These refraction errors are dependant on the scanning geometry and collection optics. We developed a fully 3D image reconstruction algorithm, algebraic reconstruction technique-refraction correction (ART-rc) that corrects for the refractive index mismatches present in a gel dosimeter scanner not only at the boundary, but also for any rayline refraction due to multiple dose regions inside the dosimeter. In this study, simulation and experimental studies have been carried out to reconstruct a 3D dose volume using 2D CCD measurements taken for various views. The study also focuses on the effectiveness of using different refractive-index matching media surrounding the gel dosimeter. Since the optical density is assumed to be low for a dosimeter, the filtered backprojection is routinely used for reconstruction. We carry out the reconstructions using conventional algebraic reconstruction (ART) and refractive index corrected ART (ART-rc) algorithms. The reconstructions based on FDK algorithm for cone-beam tomography has also been carried out for comparison. Line scanners and point detectors, are used to obtain reconstructions plane by plane. The rays passing through dose region with a RI mismatch does not reach the detector in the same plane depending on the angle of incidence and RI. In the fully 3D scanning setup using 2D array detectors, light rays that undergo refraction are still collected and hence can still be accounted for in the reconstruction algorithm. It is found that, for the central region of the dosimeter, the usable radius using ART-rc algorithm with water as RI matched

  13. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

    OpenAIRE

    Abe Shunsuke; Handa Hiroyuki; Takahashi Ryota; Imaizumi Kei; Fukidome Hirokazu; Suemitsu Maki

    2010-01-01

    Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and ...

  14. PVT Panels. Fully renewable and competitive

    International Nuclear Information System (INIS)

    Bakker, M.; Strootman, K.J.; Jong, M.J.M.

    2003-10-01

    A photovoltaic/thermal (PVT) panel is a combination of photovoltaic cells with a solar thermal collector, generating solar electricity and solar heat simultaneously. PVT panels generate more solar energy per unit surface area than a combination of separate PV panels and solar thermal collectors, and share the aesthetic advantage of PV. After several years of research, PVT panels have been developed into a product that is now ready for market introduction. One of the most promising system concepts, consisting of 25 m 2 of PVT panels and a ground coupled heat pump, has been simulated in TRNSYS, and has been found to be able to fully cover both the building related electricity and heat consumption, while keeping the long-term average ground temperature constant. The cost and payback time of such a system have been determined; it has been found that the payback time of this system is approximately two-thirds of the payback time of an identical system but with 21 m 2 of PV panels and 4 m 2 of solar thermal collectors. Finally, by looking at the expected growth in the PV and solar thermal collector market, the market potential for for PVT panels has been found to be very large

  15. A fully relativistic definition of the geoid

    Science.gov (United States)

    Laemmerzahl, C.; Hackmann, E.; Perlick, V.; Philipp, D.; Puetzfeld, D.

    2016-12-01

    The present definition of the geoid is based on the Newtonian potential together with the potential related to centrifugal force of the rotating Earth. All time-dependencies due to, e.g., seasonal variations are removed from this definition. The geoid is defined as to be related to the rigid part of the rotating Earth. Upcoming high precision gravimeters and gradiometers as well as optical clocks and clock networks make it necessary to propose a definition of the geoid solely in terms of General Relativity.The new definition of the geoid will be stated within the framework of General Relativity. In this framework we model atomic clocks by standard clocks showing the proper time along their worldline, and we model the Earth in terms of a rigidly rotating gravitating body. The second assumption gives that space-time is equipped with a time-like Killing vector. The norm of this Killing vector is a scalar function which (i) describes the acceleration of freely falling bodies on the surface of the Earth, and (ii) gives the redshift of atomic clocks whose ticking rate can be compared using connecting light rays or optical fibers. It can be shown that in the nonrelativistic limit this generalized potential gives the usual Newtonian potential. Therefore, this scalar function can be taken as the basis for a natural and fully general relativistic generalization of the geoid based on Newtonian gravitational physics. Finally, for certain space-times we will present examples for the geoid.

  16. Fully Resolved Simulations of 3D Printing

    Science.gov (United States)

    Tryggvason, Gretar; Xia, Huanxiong; Lu, Jiacai

    2017-11-01

    Numerical simulations of Fused Deposition Modeling (FDM) (or Fused Filament Fabrication) where a filament of hot, viscous polymer is deposited to ``print'' a three-dimensional object, layer by layer, are presented. A finite volume/front tracking method is used to follow the injection, cooling, solidification and shrinking of the filament. The injection of the hot melt is modeled using a volume source, combined with a nozzle, modeled as an immersed boundary, that follows a prescribed trajectory. The viscosity of the melt depends on the temperature and the shear rate and the polymer becomes immobile as its viscosity increases. As the polymer solidifies, the stress is found by assuming a hyperelastic constitutive equation. The method is described and its accuracy and convergence properties are tested by grid refinement studies for a simple setup involving two short filaments, one on top of the other. The effect of the various injection parameters, such as nozzle velocity and injection velocity are briefly examined and the applicability of the approach to simulate the construction of simple multilayer objects is shown. The role of fully resolved simulations for additive manufacturing and their use for novel processes and as the ``ground truth'' for reduced order models is discussed.

  17. Fully inkjet-printed microwave passive electronics

    KAUST Repository

    McKerricher, Garret

    2017-01-30

    Fully inkjet-printed three-dimensional (3D) objects with integrated metal provide exciting possibilities for on-demand fabrication of radio frequency electronics such as inductors, capacitors, and filters. To date, there have been several reports of printed radio frequency components metallized via the use of plating solutions, sputtering, and low-conductivity pastes. These metallization techniques require rather complex fabrication, and do not provide an easily integrated or versatile process. This work utilizes a novel silver ink cured with a low-cost infrared lamp at only 80 °C, and achieves a high conductivity of 1×107 S m−1. By inkjet printing the infrared-cured silver together with a commercial 3D inkjet ultraviolet-cured acrylic dielectric, a multilayer process is demonstrated. By using a smoothing technique, both the conductive ink and dielectric provide surface roughness values of <500 nm. A radio frequency inductor and capacitor exhibit state-of-the-art quality factors of 8 and 20, respectively, and match well with electromagnetic simulations. These components are implemented in a lumped element radio frequency filter with an impressive insertion loss of 0.8 dB at 1 GHz, proving the utility of the process for sensitive radio frequency applications.

  18. Quantum Optimization of Fully Connected Spin Glasses

    Directory of Open Access Journals (Sweden)

    Davide Venturelli

    2015-09-01

    Full Text Available Many NP-hard problems can be seen as the task of finding a ground state of a disordered highly connected Ising spin glass. If solutions are sought by means of quantum annealing, it is often necessary to represent those graphs in the annealer’s hardware by means of the graph-minor embedding technique, generating a final Hamiltonian consisting of coupled chains of ferromagnetically bound spins, whose binding energy is a free parameter. In order to investigate the effect of embedding on problems of interest, the fully connected Sherrington-Kirkpatrick model with random ±1 couplings is programmed on the D-Wave Two^{TM} annealer using up to 270 qubits interacting on a Chimera-type graph. We present the best embedding prescriptions for encoding the Sherrington-Kirkpatrick problem in the Chimera graph. The results indicate that the optimal choice of embedding parameters could be associated with the emergence of the spin-glass phase of the embedded problem, whose presence was previously uncertain. This optimal parameter setting allows the performance of the quantum annealer to compete with (and potentially outperform, in the absence of analog control errors optimized simulated annealing algorithms.

  19. Introduction of Artificial Pinning Center into PLD-YBCO Coated Conductor on IBAD and Self-Epitaxial CeO2 Buffered Metal Substrate

    International Nuclear Information System (INIS)

    Kobayashi, H.; Yamada, Y.; Ishida, S.; Takahashi, K.; Konishi, M.; Ibi, A.; Miyata, S.; Kato, T.; Hirayama, T.; Shiohara, Y.

    2006-01-01

    In order to fabricate YBa2Cu3O7-x (YBCO) coated conductors with high critical current density Jc in magnetic fields, we fabricated YBCO coated conductors with artificial pinning centers by the pulsed laser deposition (PLD) method on a self epitaxial PLD-CeO2 layer and ion-beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO) buffered Hastelloy tape. Artificial pinning centers were introduced by the PLD deposition using the yttria-stabilized zirconia (YSZ) oxide target (nano-dot method) and YBCO target including YSZ particles (mixed target method). In the experiments using YSZ oxide target, YSZ nano-dots were observed. They were approximately 15 nm in height and 10 nm to 70 nm in diameter. We found that the density of nano-dots was controlled by the number of laser pulses. These samples exhibited higher Jc than YBCO films in magnetic fields. Furthermore, a similar improvement of Jc was observed in the experiments using YBCO target including YSZ particles. TEM observation revealed that columnar nano-structure made of BaZrO3 was formed during YBCO deposition and it was effective for pinning. We call this new epitaxial nano-structure 'bamboo structure' from its anisotropic growth and morphology

  20. Numerical simulations of a fully developed liquid-metal magnetohydrodynamic flow in a circular duct

    OpenAIRE

    Xinghui Cai; Hongfu Qiang; Sanqiang Dong; Guoliang Wang; Jiangren Lu

    2015-01-01

    In this paper, a kind of new meshless method, two-level radial point interpolation method, has been developed to analyze the fully developed liquid-metal Magnetohydrodynamic (MHD) flow under the externally applied magnetic field in a circular duct with thin conducting walls. This method applied the radial point interpolation method (RPIM) to solve the two levels Galerkin weak form formulations. As the shape functions from RPIM possess Kronecker delta function properties, the essential boundar...